paper_id
stringlengths 9
16
| version
stringclasses 26
values | yymm
stringclasses 311
values | created
timestamp[s] | title
stringlengths 6
335
| secondary_subfield
sequencelengths 1
8
| abstract
stringlengths 25
3.93k
| primary_subfield
stringclasses 124
values | field
stringclasses 20
values | fulltext
stringlengths 0
2.84M
|
|---|---|---|---|---|---|---|---|---|---|
1501.03486 | 2 | 1501 | 2015-01-16T10:15:42 | A spin-wave logic gate based on a width-modulated dynamic magnonic crystal | [
"cond-mat.mes-hall"
] | An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of the waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated. | cond-mat.mes-hall | cond-mat | A spin-wave logic gate based on a width-modulated dynamic magnonic crystal
A.A. Nikitin1,2,3*, A.B. Ustinov1,3, A.A. Semenov1, A.V. Chumak2, A.A. Serga2, V.I. Vasyuchka2,
E. Lähderanta4, B.A. Kalinikos1, and B. Hillebrands2
1) Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University, St. Petersburg,
197376 Russia
2) Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern,
Kaiserslautern, 67663 Germany
3) Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta, 53850 Finland
An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is
realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and
two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for
dynamic control of the effective geometry of the waveguide and results in a suppression of the magnonic band gap.
The performance of the magnonic crystal as an AND logic gate is demonstrated.
* and.a.nikitin@gmail.com
In recent years artificially patterned magnetic media,
magnonic crystals (MCs), have commanded increased interest
(see reviews [1-4] and literature therein). One of the important
features of MCs is the presence of band gaps in the spin-wave
spectrum, i.e. frequency bands in which the propagation of
spin waves is forbidden [5-7]. The dispersion management
introduced by an artificial periodicity of the magnetic film
allows for the observation of a variety of different linear and
nonlinear spin-wave phenomena. Among
the
formation of band gaps [8-11] and the generation of gap
solitons [12, 13]. Magnonic crystals are also promising for
practical applications, particularly for phase shifters [14] and
generators [15], and they have also been suggested for use as
temperature or magnetic field sensors [16, 17].
them are
A very fascinating type of MCs is the dynamic magnonic
crystal (DMC) [18-20]. This is a wave guiding structure with
rapidly switchable periodic properties. Up to now, it has been
realized in the form of a YIG film with a meander type
conductor placed on its surface. An electric current in the
conductor produces a periodic spatial modulation of the bias
magnetic field [18]. Due to this property, the dynamic
for unique signal processing
magnonic crystal allows
functions, such as all-linear
frequency
conversion [19], and signal storage [20].
reversal,
time
logic functionality can also be realized via control of the spin-
wave amplitude in the interferometer arms [23, 26]. The logic
gate presented here does not utilize any interferometer
circuitry; instead, it consists of one WMDMC, which controls
the spin-wave amplitude. This function is realized through
control of the sensitivity of the propagating spin wave to the
edge modulation of the magnetic-film waveguide structure.
A schematic view of the WMDMC is shown in Fig. 1. The
device was fabricated using an epitaxial Yttrium Iron Garnet
(YIG) film. For the experimental investigation, the YIG-film
waveguide was cut from a high-quality single-crystal YIG film
of 8.5 µm thickness grown on 500 µm thick Gadolinium
Gallium Garnet (GGG) substrate by liquid-phase epitaxy. The
film has pinned surface spins that lead to standing spin-wave
resonances and appearance of additional dips in the amplitude-
frequency characteristic [27]. Periodic sinusoidal width
modulation of the YIG-film waveguide was made by chemical
etching of the film. The spatial modulation period Tm and the
peak-to-peak amplitude 2Am (see Fig. 1) were 400 m and
200 m, respectively (see Fig. 1). The length of the modulated
In this Letter, we report on the realization of a width-
modulated dynamic magnonic crystal (WMDMC). In the
designed structure, in contrast to the aforementioned DMC,
electric currents control the effective geometry of the magnetic
film waveguide for spin waves propagating therein. Moreover,
we demonstrate the application of the WMDMC as a spin-
wave logic gate.
It should be noted that so far spin-wave logic gates have
only been realized using a spin-wave interferometer geometry
[21-26]. For example, elements providing controllable phase
shifts for spin waves propagating in the arms of a Mach-
Zehnder interferometer were included in each arm. The logic
operations were based on changing the phase of the spin-wave
by π with an external current signal coded as a logical ‘1’. The
Fig. 1. Sketch of the width-modulated dynamic magnonic crystal.
The ports A and B represent the logical inputs. The currents I1 and
I2 supplied to the ports correspond to a logical ‘1’ if their values
equal IMBG. Zero currents correspond to a logical ‘0’. The output
spin-wave signal represents the logical output.
(a)
(b)
(c)
(d)
1570 Oe
Hext
1600 Oe
Fig. 2. Distributions of the bias magnetic field (top) and transmitted
spin-wave power versus frequency for
the width-modulated
dynamic magnonic crystal (bottom) for the cases when the electric
current is not applied to the wires (a); the current IMBG is applied to
only one of the wires (b,c); and the current IMBG is applied to both
wires (d). The value of the current IMBG = 1500 mA.
the conditions
for excitation of
area was 4 mm, while the width of the unmodulated section of
the YIG-film waveguide was 1.5 mm. A spatially uniform bias
magnetic field was applied across the YIG waveguide in order
to provide
surface
magnetostatic spin waves [28]. These waves were exited and
detected by the microwave strip-line antennas placed at equal
distances from both ends of the modulated YIG-film area
10 mm away from each other. Two gold wires of 50 m in
diameter were placed on the YIG-film surface along the
modulated edges, as shown in Fig. 1. These wires were used
for the dynamic control of the magnonic crystal band gap by
supplying the electric currents.
Let us consider qualitatively the formation of a band gap in
the width-modulated magnonic crystal. Generally, a wave
vector of traveling spin waves exited by the input antenna in
the YIG film has two components, which are in-plane. The
first component is longitudinal along the direction from the
input to the output antenna while the second component is
transverse. As it is physically clear, the value of the transverse
component is dependent on the width of the waveguide. This
effect leads to the periodic change in the wave guiding
properties of the width-modulated YIG film and provides the
magnonic band gap (MBG) in the amplitude vs. frequency
characteristic of the investigated MC. The number of MBGs is
defined by the type of the width modulation. For example, in
the case of rectangular modulation there are several MBGs. As
soon as the width modulation is sinusoidal, as is the case in the
investigated structure (Fig. 1), there is only one MBG in the
power vs. frequency characteristic (see Fig. 2(a)) [29].
the borders of
The physical mechanism underlying the control of the
magnonic crystal band gap by the electric currents applied to
the wires can be understood as follows. Positive currents I1 and
I2 applied to both wires create an additional negative Oersted
field with respect to the applied static bias field. Therefore, the
spatial distribution of the resulting magnetic field has two
minima at
the width modulation. The
distributions of the bias magnetic field are shown in Fig. 2 as
color maps. Provided the depth of the minima is sufficiently
large, they screen the YIG-film modulated edges due to a
decrease in the magnetic field inside the YIG waveguide. In
other words, the existence of these minima cause the width
modulation of the waveguide to become “invisible” to spin
waves. This effect leads to the disappearance of the band gap
at f0 = 6.6 GHz, as is shown in Fig. 2(d).
We will now present the dynamic properties of the device
structure realized upon application of the controlling dc
electric currents. The experiments were carried out in the
following manner. A microwave signal applied to the input
antenna excited a surface magnetostatic spin wave. After
passing through the magnonic crystal the spin wave was
detected by the output antenna (Fig. 1). The power of the
received spin waves was measured as a function of their carrier
frequency. A typical dependence measured for H = 1600 Oe
with no current in the edge wires is shown in Fig. 2(a). As can
be seen in the graph, the center frequency of the band gap was
f0 = 6.6 GHz.
The dependence of the power of the output signal vs.
frequency obtained under two equal controlling currents IMBG
of 1500 mA is shown in Fig. 2(d). Note that the data clearly
demonstrate (in comparison to Fig. 2(a)) a suppression of the
band gap at 6.6 GHz. If the dc current was applied to one of
the wires then only one of the modulated edges was
deactivated. In this case, the input spin wave was still scattered
on its path through the waveguide. In this situation, the band
gap appears as shown in Figs 2(b, c). The difference between
Fig. 2(b) and Fig. 2(c) could be explained by a possible
asymmetry in the distribution of the spin-wave amplitude
along the cross-section of the YIG-film waveguide. In this
case, there is a difference in the sensitivity of the propagating
wave to the boundary conditions on the different waveguide
edges.
Dependences of the spin-wave transmission as a function
of the currents I1 and I2 measured at the frequency f0 =
6.6 GHz is shown in Fig. 3. As is visible, an increase in both
currents leads to a substantial increase in the spin-wave
transmission due to a reduction in the influence of the
modulated edges. At the same time, there is a relatively weak
influence with only one dc current applied.
6.66.76.80.1110Magnonic crystal band gap I1=I2= 0 mA Power (a. u.)Frequency (GHz) f0=6.6 GHz6.66.76.80.1110 Magnonic crystal band gap I1= IMBG I2= 0 mAFrequency (GHz)Power (a. u.) 6.66.76.80.1110 Magnonic crystal band gap I2= IMBG I1= 0 mAFrequency (GHz) Power (a. u.)6.66.76.80.1110 I1=I2=IMBG Power (a. u.)Frequency (GHz)
Fig. 3 Dependence of the spin wave transmission on the value of
the dc current at frequency f0=6.6 GHz. Squares: both currents I1
and I2 are changed; triangles: the current I1 is changed and I2=0;
circles: I1=0 and I2 is changed.
A possible application of the WMDMC for realization of
an AND logic gate will now be explored. The operating
principle of the AND logic gate is based on controlling the
bias magnetic field distribution along the sinusoidal borders of
the YIG-film waveguide through a change in the electric
currents I1 and I2. The logic ‘0’ is represented by I = 0 mA and
a logic ‘1’ – by I = IMBG = 1500 mA, which is enough to
"switch off" the width modulation on one side of the
WMDMC. The microwave pulses at the input antenna
represent clock pulses. The microwave signal at the output
antenna serves as the logic signal output. The operational
frequency corresponds to the central frequency of the band
gap, for example f0 = 6.6 GHz. Therefore, the presence of the
band gap (i.e., low power level at the output) represents a logic
‘0’ and the absence of the band gap (i.e., high power at the
output, Pout = P1) represents a logic ‘1’.
traces of
signal
demonstrating the performance of the logic gate are shown in
Fig. 4. It is observed that the logic ‘0’ appears at the output
port in three situations: for two logic ‘0s’ applied to the input
ports A and B (Fig. 4(a)) and for the combinations of the logic
‘0’ and the logic ‘1’ applied to the inputs (Fig. 4(b, c)). In the
case where a logic ‘1’ is applied simultaneously to both inputs,
the signal at the output port corresponds to a logic ‘1’.
Typical oscilloscope
the output
In conclusion, width-modulated magnonic crystals may
find a variety of applications. For example, they can be
employed for the development of dynamic magnonic crystals
and spin-wave logic gates, as demonstrated in this paper.
Another example could be microwave notch filters with a stop-
band frequency corresponding to the magnonic band gap.
Advantages of the dynamic magnonic crystal presented above
in comparison to the ones previously developed [18-20] are the
potentially
for
miniaturization. Indeed, the current control is provided here by
short conductors, which have an inductance much less than the
meander type wire reported in [18]. The use of nanostructured
width-modulated waveguides made of Permalloy films, as in
Ref. [9], will allow for a significant reduction of the size of the
dynamic magnonic crystal and the logic circuit presented here.
fast performance and
the possibility
Fig. 4 Waveforms of the output signal of the AND logic gate.
Microwave signal frequency f0=6.6 GHz. Currents I1 and I2 serve
as logic inputs; logic ‘0’ corresponds to zero current, logic ‘1’- to
IMBG=1500 mA. High level of the microwave output signal
corresponds to a logic ‘1’, and low level to a logic ‘0’.
The work was supported in part by the Russian Science
Foundation (Grant 14-12-01296), the Ministry of Education
and Science of Russian Federation, the Academy of Finland,
EU-FET grant
the Deutsche
Forschungsgemeinschaft.
InSpin 612759, and by
1. A. A. Serga, A. V. Chumak, and B. Hillebrands, J. Phys. D: Appl.
Phys. 43, 264002 (2010).
2. V. V. Kruglyak, S. O. Demokritov, and D. Grundler, J. Phys. D:
Appl. Phys. 43, 264001 (2010).
3. B. Lenk, H. Ulrichs, F. Garbs, and M. Münzenberg, Phys. Rep.
507, 107 (2011).
4. M. Krawczyk and D. Grundler, J. Phys.: Condens. Matter 26,
123202 (2014).
5. J. W. Kos, M. Krawczyk, Yu. S. Dadoenkova, N. N. Dadoenkova,
and I. L. Lyubchanskii, J. Appl. Phys. 115, 174311 (2014).
6. H. T. Nguyen and M. G. Cottam, J. Appl. Phys. 111, 07D122
(2012).
7. M. Mruczkiewicz, M. Krawczyk, V. K. Sakharov, Yu. V.
Khivintsev, Yu. A. Filimonov, and S. A. Nikitov, J. Appl. Phys.
113, 093908 (2013).
8. K.-S. Lee, D.-S. Han, and S.-K. Kim, Phys. Rev. Lett. 102,
127202 (2009).
9. A. V. Chumak et al., Appl. Phys. Lett. 95, 262508 (2009).
10. M. Arikan, Y. Au, G. Vasile, S. Ingvarsson, and V. V. Kruglyak,
J. Phys. D: Appl. Phys. 46, 135003 (2013).
11. A. B. Ustinov and B. A. Kalinikos, Tech. Phys. Lett. 40, 568
(2014).
12. A. B. Ustinov, B. A. Kalinikos, V. E. Demidov, and S. O.
Demokritov, Phys. Rev. B 81, 180406(R) (2010).
13. S. V. Grishin, Y. P. Sharaevskii, S. A. Nikitov, E. N. Beginin, and
S. E. Sheshukova, IEEE Trans. Mag. 47, 3716 (2011).
14. Y. Zhu, K. H. Chi, and C. S. Tsai, Appl. Phys. Lett. 105, 022411
(2014).
0300600900120015000.000.250.500.751.00 I1=I2= I I1= I, I2= 0 I1= 0, I2= INormalized transmission (a. u.)Current I (mA) 15. S. V. Grishin, E. N. Beginin, M. A. Morozova, Yu. P.
Sharaevskii, and S. A. Nikitov, J. Appl. Phys. 115, 053908
(2014).
16. M. Inoue, A. Baryshev, H. Takagi, P. B. Lim, K. Hatafuku,
J. Noda, and K. Togo, Appl. Phys. Lett. 98, 132511 (2011).
17. R. G. Kryshtal and A. V. Medved, Appl. Phys. Lett. 100, 192410
(2012).
18. A. V. Chumak, T. Neumann, A. A. Serga, B. Hillebrands, and M.
P. Kostylev J. Phys. D: Appl. Phys. 42, 205005 (2009).
19. A. V. Chumak, V. S. Tiberkevich, A. D. Karenowska, A. A.
Serga, J. F. Gregg, A. N. Slavin, B. Hillebrands, Nat. Commun. 1,
141 (2010).
20. A. D. Karenowska, J. F. Gregg, V. S. Tiberkevich, A. N. Slavin,
A. V. Chumak, A. A. Serga, and B. Hillebrands, Phys. Rev. Lett.
108, 015505 (2012).
21. A. B. Ustinov and B. A. Kalinikos, Tech. Phys. Lett. 27, 403
(2001).
22. M. P. Kostylev, A. A. Serga, T. Schneider, B. Leven, and B.
Hillebrands, Appl. Phys. Lett. 87, 153501 (2005).
23. T. Schneider, A. A. Serga, B. Leven, B. Hillebrands, R. L.
Stamps, and M. P. Kostylev, Appl. Phys. Lett. 92, 022505 (2008).
24. A. Khitun, M. Bao, and K. L. Wang, J. Phys. D: Appl. Phys. 43,
264005 (2010).
25. Y. Au, M. Dvornik, O. Dmytriiev, and V. V. Kruglyak, Appl.
Phys. Lett. 100, 172408 (2012).
26. A. V. Chumak, A. A. Serga, and B. Hillebrands, Nat. Commun. 5,
4700 (2014).
27. B. A. Kalinikos, A. N. Slavin, J. Phys. C: Solid State Phys. 19,
7013 (1986).
28. D. D. Stancil and A. Prabhakar, Spin Waves: Theory and
Applications, Springer, 2009.
29. F. Ciubotaru, A. V. Chumak, N. Yu. Grigoryeva, A. A. Serga, and
B. Hillebrands, J. Phys. D: Appl. Phys. 45, 255002 (2012).
|
0908.4485 | 2 | 0908 | 2010-03-15T10:35:23 | Discontinuous Euler instability in nanoelectromechanical systems | [
"cond-mat.mes-hall"
] | We investigate nanoelectromechanical systems near mechanical instabilities. We show that quite generally, the interaction between the electronic and the vibronic degrees of freedom can be accounted for essentially exactly when the instability is continuous. We apply our general framework to the Euler buckling instability and find that the interaction between electronic and vibronic degrees of freedom qualitatively affects the mechanical instability, turning it into a discontinuous one in close analogy with tricritical points in the Landau theory of phase transitions. | cond-mat.mes-hall | cond-mat |
Discontinuous Euler instability in nanoelectromechanical systems
Guillaume Weick,1, 2 Fabio Pistolesi,3, 4 Eros Mariani,1, 5 and Felix von Oppen1
1Dahlem Center for Complex Quantum Systems and Fachbereich Physik,
Freie Universitat Berlin, D-14195 Berlin, Germany
2IPCMS (UMR 7504), CNRS and Universit´e de Strasbourg, F-67034 Strasbourg, France
3CPMOH (UMR 5798), CNRS and Universit´e de Bordeaux I, F-33405 Talence, France
4LPMMC (UMR 5493), CNRS and Universit´e Joseph Fourier, F-38042 Grenoble, France
5School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK
(Dated: November 1, 2018)
We investigate nanoelectromechanical systems near mechanical instabilities. We show that quite
generally, the interaction between the electronic and the vibronic degrees of freedom can be ac-
counted for essentially exactly when the instability is continuous. We apply our general framework
to the Euler buckling instability and find that the interaction between electronic and vibronic de-
grees of freedom qualitatively affects the mechanical instability, turning it into a discontinuous one
in close analogy with tricritical points in the Landau theory of phase transitions.
PACS numbers: 73.63.-b, 85.85.+j, 63.22.Gh
I.
INTRODUTION
The buckling of an elastic rod by a longitudinal com-
pression force F applied to its two ends constitutes the
paradigm of a mechanical
instability, called buckling
instability.1 It was first studied by Euler in 1744 while in-
vestigating the maximal load that a column can sustain.2
As long as F stays below a critical force Fc, the rod re-
mains straight, while for F > Fc it buckles, as sketched in
Fig. 1a-b. The transition between the two states is con-
tinuous and the frequency of the fundamental bending
mode vanishes at the instability.
There has been much recent interest in exploring buck-
ling instabilities in nanomechanical systems.
In the
quest to understand the remarkable mechanical prop-
erties of nanotubes,3 -- 5 there have been observations of
compressive buckling instabilities in this system.6 The
Euler buckling instability has been observed in SiO2
nanobeams and shown to obey continuum elasticity
theory.7 There are also close relations with the recently
observed wrinkling8 and possibly with the rippling9 of
suspended graphene samples. Theoretical works have
studied the quantum properties of nanobeams near the
Euler instability,10 -- 13 proposing this system to explore
zero-point fluctuations of a mechanical mode11 or to serve
as a mechanical qubit.13
In this work, we study the interaction of current flow
with the vibrational motion near such continuous me-
chanical
instabilities which constitutes a fundamental
issue of nanoelectromechanics.14 Remarkably, we find
that under quite general conditions, this problem ad-
mits an essentially exact solution due to the continu-
ity of the instability and the consequent vanishing of
the vibronic frequency at the transition ("critical slow-
ing down").
In fact, the vanishing of the frequency
implies that the mechanical motion becomes slow com-
pared to the electronic dynamics and an appropriate non-
equilibrium Born-Oppenheimer (NEBO) approximation
becomes asymptotically exact near the transition. Here,
FIG. 1: (color online) Sketch of a nanobeam (a) in the flat
state and (b) the buckled state with two equivalent metastable
positions of the rod (solid and dashed lines). An equivalent
circuit of the embedded SET is shown in (c).
we illustrate our general framework by applying it to the
nanoelectromechanics of the Euler instability.
We find that the interplay of electronic transport and
the mechanical instability causes significant qualitative
changes both in the nature of the buckling and in the
transport properties.
In leading order, the NEBO ap-
proximation yields a current-induced conservative force
acting on the vibronic mode. At this order, our principal
conclusion is that the coupling to the electronic dynamics
can change the nature of the buckling instability from a
continuous to a discontinuous transition which is closely
analogous to tricritical behavior in the Landau theory
of phase transitions. Including in addition the fluctua-
tions of the current-induced force as well as the corre-
sponding dissipation leads to Langevin dynamics of the
vibrational mode which becomes important in the vicin-
ity of the discontinuous transition. Employing the same
NEBO limit to deduce the electronic current, we find that
the buckling instability induces a current blockade over
a wide range of parameters. This is a manifestation of
the Franck-Condon blockade15 -- 17 whenever the buckling
instability remains continuous but is caused by a novel
tricritical blockade when the instability is discontinuous.
The emergence of a current blockade in the buckled state
suggests that our setup could, in principle, serve as a
mechanically-controlled switching device.
II. MODEL
Close to the Euler instability, the frequency of the fun-
damental bending mode of the beam approaches zero,
while all higher modes have a finite frequency.1 This al-
lows us to retain only the fundamental mode of amplitude
X (see Fig. 1a-b) and following previous studies,10 -- 12 we
reduce the vibrational Hamiltonian to18
Hvib =
P 2
2m
+
mω2
2
X 2 +
α
4
X 4,
(1)
which is closely analogous to the Landau theory of contin-
uous phase transitions. In Eq. (1), P is the momentum
conjugate to X and m denotes an effective mass. The
mode frequency ω2 ∼ 1 − F/Fc changes sign when F
reaches a critical force Fc. Global stability then requires
a quartic term with α > 0. Thus, for F < Fc (ω2 > 0),
X = 0 is the only stable minimum and the beam remains
straight. For F > Fc (ω2 < 0), the beam buckles into
one of the two minima at ±X+ = ±(cid:112)−mω2/α.
The vibronic mode of the nanobeam interacts with an
embedded metallic single-electron transistor (SET), con-
sisting of a small metallic island coupled to source, drain,
and gate electrode (Fig. 1c). We assume that the SET
operates in the Coulomb blockade regime19 and that bias
and gate voltage are tuned to the vicinity of the conduct-
ing region between SET states with, say, zero and one
excess electron. The electronic degrees of freedom cou-
ple to the vibronic motion through the occupation n of
excess electrons on the metallic island. Specifically, we
assume that the electron-vibron coupling does not break
the underlying parity symmetry of the vibronic dynam-
ics under X → −X. This follows naturally when the
coupling emerges from the electron-phonon coupling in-
trinsic to the nanobeam20 and implies that the coupling
depends only on even powers of the vibronic mode coor-
dinate X. The dominant coupling is quadratic in X,
with a coupling constant g > 0.20 When there is a signif-
icant contribution to the electron-vibron coupling origi-
nating from the electrostatic dot-gate interaction, we en-
vision a symmetric gate setup consistent with Eq. (2).
In the presence of the vibronic dynamics X(t), the elec-
tronic occupation n(X, t) of the island is described by the
Boltzmann-Langevin equation21
= {n, Hvib} + Γ+(1 − n) − Γ−n + δJ+ − δJ−.
(3)
dn
dt
This equation assumes that the bias is large compared
to temperature so that tunneling is effectively unidi-
rectional and the relevant tunneling rates Γ± for tun-
neling onto (+) and off (−) the island are given by
Γ± = R−1(V /2 ± ¯Vg)Θ(V /2 ± ¯Vg). Here, R denotes
the tunneling resistances (R (cid:29) h/e2) between island and
leads, V is the bias voltage, Θ(x) denotes the Heaviside
2
step function, and we set = e = 1. Since both gate
voltage (via the capacitances C and Cg in Fig. 1c) and vi-
bronic deformations couple to the excess charge n on the
island, the effective gate voltage ¯Vg = Vg − gX 2/2 com-
bines the gate potential Vg (measured from the degen-
eracy point between the states with zero and one excess
electron) and the vibron-induced shift of the electronic
energy described by Hc. The stochastic Poisson nature
of electronic tunneling is accounted for by including the
Langevin sources δJ± with correlators (cid:104)δJ+(t)δJ+(t(cid:48))(cid:105) =
Γ+(1 − n)δ(t − t(cid:48)) and (cid:104)δJ−(t)δJ−(t(cid:48))(cid:105) = Γ−nδ(t − t(cid:48)).
The vibronic dynamics enters Eq. (3) through the Pois-
son bracket {n, Hvib}.
III. STABILITY ANALYSIS
We are now in a position to investigate the influence
of the electronic dynamics on the vibronic motion. Near
the instability, the vibrational dynamics becomes slow
compared to the electronic tunneling dynamics. As has
recently been shown,22,23 the effect of the current on
the vibrational motion can then be described within a
NEBO approximation in which the vibrational motion is
subject to a current-induced force −gXn(X, t) originat-
ing in the electron-vibron interaction (2). This current-
induced force involves both a time-averaged and conser-
vative force as well as fluctuating and frictional forces,
resulting in Langevin dynamics of the vibronic degree of
freedom.
In lowest order, the Langevin dynamics only involves
the conservative force which emerges from the average
occupation n0(X) in the absence of fluctuations (δJ± (cid:39)
0) and vibronic dynamics ({n, Hvib} (cid:39) 0). In this limit,
Eq. (3) reduces to the usual rate equation of a metallic
SET so that19
1,
1
2
0,
vg(x) > v/2,
+
vg(x)
v
, −v/2 (cid:54) vg(x) (cid:54) v/2,
vg(x) < −v/2
(4)
with v > 0 and vg(x) = vg − x2/2. Here and below,
we employ dimensionless variables by introducing char-
acteristic scales E0 = g2/α of energy, l0 = (cid:112)g/α of
length, and ω0 = (cid:112)g/m of frequency (or time t) from
a comparison of the quartic vibron potential in Hvib and
the electron-vibron coupling Hc. Specifically, we intro-
duce the reduced variables x = X/l0, p = P/mω0l0,
τ = ω0t, v = V /E0, vg = Vg/E0, and r = Rω0/E0. In
terms of these variables, we can also write Hvib + Hc =
E0[p2/2 + (− + n)x2/2 + x4/4] in terms of a reduced
compressional force = −mω2/g.
The current-induced force −xn0(x) has dramatic ef-
fects on the Euler instability, as follows from a stability
analysis of the vibrational motion. The (meta)stable po-
sitions of the nanobeam are obtained by setting the effec-
tive force feff (x) = x − x3 − xn0(x) to zero. Our results
Hc =
g
2
X 2 n,
(2)
n0(x) =
3
FIG. 2: (color online) (Meta)stable (solid blue lines) and unstable (dashed red lines) positions of the nanobeam vs. scaled force
for (a) vg < v/2, v < 1/2, (b) vg < v/2, v > 1/2, (c) vg > v/2, v < 1/2 (for + > 1; a similar plot holds for + < 1), (d)
vg > v/2, v > 1/2, as indicated in the vg -- v plane in (e). The dotted blue line is the result without electron-vibron coupling.
+ = − 1, and x2− = ( − )/(1 − 1/2v). Grey indicates conducting regions.
Notation: ± = 2vg ± v, = 1/2 + vg/v, x2
+ = , x2
are summarized in the stability diagrams in Fig. 2. The
most striking results of this analysis are: (i) The current
flow renormalizes the critical force required for buckling
towards larger values.
(ii) At low biases, the buckled
state can appear via a discontinuous transition.
These results can be understood most directly in terms
of the potential veff (x) associated with feff (x). Focusing
on the current-carrying region (shown in grey in Fig. 2
and delineated by max{0, −} < x2 < + with ± =
2vg ± v), we find
veff (x) =
1
2
− +
v + 2vg
2v
x2 +
1
4
1 − 1
2v
x4.
(5)
(cid:18)
(cid:19)
(cid:18)
(cid:19)
The quadratic term shows that the current indeed stabi-
lizes the unbuckled state, renormalizing the critical force
to = 1/2 + vg/v when − < 0 < + (Fig. 2a-b). Re-
markably, however, the current-induced contribution to
the quartic term is negative at small x2 and thus desta-
bilizes the unbuckled state. According to Eq. (5), the
quartic term in the current-induced potential becomes in-
creasingly significant as the bias voltage v decreases and
we find that the overall prefactor of the quartic term be-
comes negative when v < 1/2.24 It is important to note
that this does not imply a globally unstable potential
since the current-induced force contributes only for small
x2. A sign reversal of the quartic term is also a famil-
iar occurrence in the Landau theory of tricritical points
which connect between second- and first-order transition
lines.25 In close analogy, the sign reversal of the quartic
term in the effective potential (5) signals a discontinuous
Euler instability which reverts to a continuous transition
at biases v > 1/2 where the prefactor of the quartic term
remains positive.
Specifically, when v > 1/2 (Fig. 2b,d), the current-
induced potential renormalizes the parameters of the vi-
bronic Hamiltonian but leaves the quartic term posi-
tive. This modifies how the position of the minimum
depends on the applied force in the conducting region
max{0, −} < x2 < +, but the Euler instability remains
continuous. When v < 1/2, the equilibrium position
at finite x becomes unstable within the entire current-
carrying region. This leads to a discontinuous Euler tran-
sition when − < 0 < + (Fig. 2a) and to multistability
in the region − < x2 < + when − > 0 (Fig. 2c).26
At the level of the stability analysis, we can also ob-
tain the current I by evaluating the rate-equation result19
RI(x)/V = 1/4 − [vg(x)/v]2 at the position of the most
stable minimum. Corresponding results in the vg -- v
plane are shown in Fig. 3a-f for various values of the
applied force . By comparison with the Coulomb di-
amond in the absence of the electron-vibron coupling
(dotted lines in Fig. 3), we see that the Euler instability
leads to a current blockade over a significant parameter
range. For v > 1/2, the blockade is a manifestation of
the Franck-Condon blockade,15,17 caused by the induced
linear electron-vibron coupling when expanding Eq. (2)
about the buckled state.
In contrast, for v < 1/2, the current blockade is a
direct consequence of the discontinuous Euler instabil-
FIG. 3: (color online) Conductance G = RI/V in the vg -- v
plane for applied force (a) (cid:54) 0, (b) = 0.25, (c,g) = 0.5,
(d) = 0.75, (e) = 1, (f,h) = 1.25, within (a-f) stability
analysis and (g-h) full Langevin dynamics (r = γe = T =
0.01). Color scale: G = 0 → 1/4 from dark blue to white.
Dotted lines delineate the Coulomb diamond for g = 0.
4
ity. We have seen above that in this regime, the buckled
state becomes unstable throughout the entire current-
carrying region. As a result, the current-induced force
will always drive the system out of the current-carrying
region, explaining the current blockade. An intriguing
feature of this novel tricritical current blockade is the
curved boundary of the apparent Coulomb-blockade dia-
mond (Fig. 3), a behavior which is actually observed in
nanoelectromechanical systems.
Planck equation (6). Numerical results for the scaled lin-
ear conductance G = RI/V are shown in Fig. 3g-h, using
the same parameters as in Fig. 3c,f. We observe that the
fluctuations reduce the size of the blockaded region and
blur the edges of the conducting regions as the system
can explore more conducting states in phase space. Nev-
ertheless, the conclusions of the stability analysis clearly
remain valid qualitatively.
IV. LANGEVIN DYNAMICS
V. CONCLUSION
To investigate the robustness of the stability analysis
against fluctuations, we turn to the complete vibronic
Langevin dynamics x + γ(x) x = feff(x) + ξ(τ ). The
fluctuating force ξ(τ ) is generated by fluctuations of the
electronic occupation and the frictional force −γ(x) x by
the delayed response of the electrons to the vibronic
dynamics. To compute γ(x) and ξ(τ ), we solve Eq.
(3) including the vibronic dynamics and the Langevin
sources. Writing separate equations for average and
fluctuations of the occupation by setting n = ¯n + δn,
we see that the leading correction to ¯n arises from the
Poisson bracket, yielding ¯n = n0 −
X∂X n0. At
the same time, the fluctuations δn obey the correla-
tor (cid:104)δn(t)δn(t(cid:48))(cid:105) =
Insert-
ing these results into the expression for the current-
induced force −gXn and employing reduced units, we
find (cid:104)ξ(τ )ξ(τ(cid:48))(cid:105) = D(x)δ(τ−τ(cid:48)) with diffusion and damp-
ing coefficients D(x) = 2rx2n0(1 − n0)/v and γ(x) =
−rx∂xn0/v, respectively. Finally, we can pass from the
Langevin to the equivalent Fokker-Planck equation22,23
for the probability P(x, p, τ ) that the nanobeam is at po-
sition x and momentum p at time τ ,
Γ++Γ− n0(1 − n0)δ(t − t(cid:48)).
2
1
Γ++Γ−
We have presented a general approach to the interplay
between continuous mechanical instabilities and current
flow in nanoelectromechanical systems, and have applied
our general framework to the Euler buckling instabil-
ity. The current flow modifies the nature of the buck-
ling instability from a continuous to a tricritical transi-
tion. Likewise, the instability induces a novel tricritical
current blockade at low bias. Our nonequilibrium Born-
Oppenheimer approach generalizes not only to other con-
tinuous mechanical instabilities, but also to other systems
such as semiconductor quantum dots or single-molecule
junctions with a discrete electronic spectrum, to other
types of electron-vibron coupling,28 and to further trans-
port characteristics (e.g., current noise).
Our proposed setup can be realized experimentally by
clamping, e.g., a suspended carbon nanotube and apply-
ing a force to atomic precision either using a break junc-
tion or an atomic force microscope. Indeed, several recent
experiments show that the electron-vibron coupling is
surprisingly strong in suspended carbon nanotube quan-
tum dots.4,5,16
∂τP = −p∂xP − feff∂pP + γ∂p(pP) +
pP.
∂2
(6)
Acknowledgments
D
2
The current I =(cid:82) dxdpPst(x, p)I(x) is now obtained
Note that the diffusion and damping coefficients are non-
vanishing only in the conducting region.27
from the stationary solution ∂τPst = 0 of the Fokker-
We acknowledge financial support through Sfb 658 of
the DFG (GW, EM, FvO) and ANR contract JCJC-
036 NEMESIS (FP). FvO enjoyed the hospitality of the
KITP (NSF PHY05-51164).
1 L. D. Landau and E. M. Lifshitz, Theory of Elasticity
(Pergamon Press, Oxford, 1970).
2 L. Euler, in Leonhard Euler's Elastic Curves, translated
and annotated by W. A. Oldfather, C. A. Ellis, and D. M.
Brown, reprinted from ISIS, No. 58 XX(1), 1744 (Saint
Catherine Press, Bruges).
3 P. Poncharal et al., Science 283, 1513 (1999).
4 G. A. Steele et al., Science 325, 1103 (2009).
5 B. Lassagne et al., Science 325, 1107 (2009).
6 M. R. Falvo et al., Nature 389, 582 (1997).
7 S. M. Carr and M. N. Wybourne, Appl. Phys. Lett. 82,
709 (2003).
9 J. C. Meyer et al., Nature 446, 60 (2007).
10 S. M. Carr, W. E. Lawrence, and M. N. Wybourne, Phys.
Rev. B 64, 220101(R) (2001).
11 P. Werner and W. Zwerger, Europhys. Lett. 65, 158 (2004).
12 V. Peano and M. Thorwart, New J. Phys. 8, 21 (2006).
13 S. Savel'ev, X. Hu, and F. Nori, New J. Phys. 8, 105 (2006).
14 H. G. Craighead, Science 290, 1532 (2000); M. L. Roukes,
Phys. World 14, 25 (2001).
15 J. Koch and F. von Oppen, Phys. Rev. Lett. 94, 206804
(2005).
16 R. Leturcq et al., Nature Phys. 5, 327 (2009).
17 F. Pistolesi and S. Labarthe, Phys. Rev. B 76, 165317
8 W. Bao et al., Nature Nanotech. 4, 562 (2009).
(2007).
18 The rotation of the plane of the buckled nanobeam is as-
sumed massive due to clamped boundary conditions.
19 See, e.g., Chap. 3 in T. Dittrich et al., Quantum Transport
and Dissipation (Wiley-VCH, Weinheim, 1998).
20 E. Mariani and F. von Oppen, Phys. Rev. B 80, 155411
(2009).
21 See Ya. M. Blanter and M. Buttiker, Phys. Rep. 336, 1
(2000) for a review of the Boltzmann-Langevin method.
22 Ya. M. Blanter, O. Usmani, and Yu. V. Nazarov, Phys.
Rev. Lett. 93, 136802 (2004); ibid. 94, 049904(E) (2005).
23 D. Mozyrsky, M. B. Hastings, and I. Martin, Phys. Rev. B
73, 035104 (2006).
24 We note that the singularity at small v is cut off for bias
voltages of the order of temperature or level broadening.
5
25 See, e.g., P. M. Chaikin and T. C. Lubensky, Principles of
Condensed Matter Physics (Cambridge University Press,
Cambridge, 1995).
26 In a quite different context, a discontinuous Euler insta-
bility has also been predicted in: S. Savel'ev and F. Nori,
Phys. Rev. B 70, 214415 (2004).
27 In some cases, a stable numerical solution of Eq. (6) re-
quires a small extrinsic damping γe and temperature T .
28 E.g., a small symmetry-breaking coupling linear in X leads
to a tricritical point in an external field, a purely linear
coupling to a 2nd order transition in a field, G. Weick et
al., unpublished.
|
1007.3144 | 1 | 1007 | 2010-07-19T13:24:01 | Polarization dependence of coherent phonon generation and detection in highly-aligned single-walled carbon nanotubes | [
"cond-mat.mes-hall"
] | We have investigated the polarization dependence of the generation and detection of radial breathing mode (RBM) coherent phonons (CP) in highly-aligned single-walled carbon nanotubes. Using polarization-dependent pump-probe differential-transmission spectroscopy, we measured RBM CPs as a function of angle for two different geometries. In Type I geometry, the pump and probe polarizations were fixed, and the sample orientation was rotated, whereas, in Type II geometry, the probe polarization and sample orientation were fixed, and the pump polarization was rotated. In both geometries, we observed a very nearly complete quenching of the RBM CPs when the pump polarization was perpendicular to the nanotubes. For both Type I and II geometries, we have developed a microscopic theoretical model to simulate CP generation and detection as a function of polarization angle and found that the CP signal decreases as the angle goes from 0 degrees (parallel to the tube) to 90 degrees (perpendicular to the tube). We compare theory with experiment in detail for RBM CPs created by pumping at the E44 optical transition in an ensemble of single-walled carbon nanotubes with a diameter distribution centered around 3 nm, taking into account realistic band structure and imperfect nanotube alignment in the sample. | cond-mat.mes-hall | cond-mat |
Polarization dependence of coherent phonon generation and detection in
highly-aligned single-walled carbon nanotubes
L. G. Booshehri,1, 2 C. L. Pint,2, 3, 4 G. D. Sanders,5 L. Ren,1, 2 C. Sun,1, 2 E. H. H´aroz,1, 2
J.-H. Kim,6 K.-J. Yee,6 Y.-S. Lim,7 R. H. Hauge,2, 4 C. J. Stanton,5 and J. Kono1, 2, 3, ∗
1Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
2The Richard E. Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005
3Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA
4Department of Chemistry, Rice University, Houston, Texas 77005, USA
5Department of Physics, University of Florida, Box 118440, Gainesville, Florida 32611-8440
6Department of Physics, Chungnam National University, Daejeon, 305-764, Republic of Korea
7Department of Applied Physics, Konkuk University, Chungju, Chungbuk, 380-701, Republic of Korea
(Dated: January 5, 2018)
We have investigated the polarization dependence of the generation and detection of radial breath-
ing mode (RBM) coherent phonons (CP) in highly-aligned single-walled carbon nanotubes. Using
polarization-dependent pump-probe differential-transmission spectroscopy, we measured RBM CPs
as a function of angle for two different geometries. In Type I geometry, the pump and probe po-
larizations were fixed, and the sample orientation was rotated, whereas, in Type II geometry, the
probe polarization and sample orientation were fixed, and the pump polarization was rotated. In
both geometries, we observed a very nearly complete quenching of the RBM CPs when the pump
polarization was perpendicular to the nanotubes. For both Type I and II geometries, we have de-
veloped a microscopic theoretical model to simulate CP generation and detection as a function of
polarization angle and found that the CP signal decreases as the angle goes from 0◦ (parallel to
the tube) to 90◦ (perpendicular to the tube). We compare theory with experiment in detail for
RBM CPs created by pumping at the E44 optical transition in an ensemble of single-walled carbon
nanotubes with a diameter distribution centered around 3 nm, taking into account realistic band
structure and imperfect nanotube alignment in the sample.
PACS numbers: 78.67.Ch, 63.22.+m, 73.22.-f, 78.67.-n
I.
INTRODUCTION
The one-dimensionality of single-walled carbon nan-
otubes (SWNTs) is attractive from both fundamental
and applied points of view, where the 1D confinement
of electrons and phonons results in unique anisotropic
electric, magnetic, mechanical, and optical properties.1,2
Individualized SWNTs, both single-tube and in ensem-
ble samples, have shown anisotropy with polarized Ra-
man scattering and optical absorption measurements
where maximum signals result when the nanotube axis is
aligned parallel to the polarization of incident light.3–8
Additionally, due to strong anisotropic magnetic sus-
ceptibilities, both semiconducting and metallic SWNTs
align well within an external magnetic field, and with the
added properties of the Aharonov-Bohm effect, the elec-
tronic band structure of SWNTs respond anisotropically
with the strength of a tube-threading magnetic flux.9–16
Such optical and magnetic anisotropy is also expected
with bulk samples, but detailed measurements showing
extreme anisotropy have been lacking.17
Here we investigate anisotropic optical and vibrational
properties of a bulk film of highly-aligned SWNTs us-
ing polarization-dependent coherent phonon (CP) spec-
troscopy. CP spectroscopy is an ultrafast pump-probe
technique that complements CW Raman spectroscopy,
and although both techniques provide information about
electron-phonon coupling, CP spectroscopy avoids the
common disadvantages of Raman spectroscopy that in-
clude detection of Rayleigh scattering and photolumi-
nescence and the broadening and blending of peak
features.18 Such advantages are useful when investigat-
ing SWNTs, where a large majority of samples include
ensembles dispersed in various environments and their
optical properties are obscured by the collection of vary-
ing species of nanotubes.
Recent CP studies on SWNTs have produced direct
observation of CP oscillations of both the radial breath-
ing mode (RBM) and G-band phonons, in addition to
their phase information and dephasing times.18–24 Fur-
thermore, when pulse-shaping techniques are combined
with CP spectroscopy, predesigned trains of femtosec-
ond pulses selectively excite RBM CPs of a specific
chirality, avoiding inhomogeneous broadening from the
ensemble.23 However, it is important to note that pre-
vious CP studies investigated randomly-aligned SWNT
samples, and as the quasi-1D nature of SWNTs leads to
optical anisotropy that is dominant in the polarization
dependence of PL, absorption, and Raman scattering,
CP studies on aligned SWNTs are necessary.
Below, we present results of a detailed experimental
and theoretical study of CPs in highly-aligned SWNT
thin films and found a very strong polarization anisotropy
of the RBM as a function of angle. In particular, we ob-
served a very nearly complete quenching of the RBM
when the optical polarization is perpendicular to the
e
c
n
a
b
r
o
s
b
A
e
c
n
a
b
r
o
s
b
A
3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.8
0.6
0.4
0.2
0.0
(a)
A//
A⊥
1.6
2.4
2.0
Energy (eV)
2.8
3.2
(b)
1
2
A//
A⊥
4
3
Energy (meV)
5
6
7
2
!
Sapphire
Type I
V
V
(a)
SWNTs
H
pump probe
(b)
SWNTs
H
!
FIG. 1: (color online) Absorption spectra of aligned single-
walled carbon nanotubes in the (a) near-infrared to visible
and (b) far-infrared (or terahertz) ranges for parallel (Ak)
and perpendicular (A⊥) polarization.
tubes. We have developed a theoretical model to un-
derstand this extreme anisotropy, including band struc-
ture, interband optical transition elements, ultrafast car-
rier and phonon dynamics, and imperfect nanotube align-
ment in the sample. Fitting our results to theory, we also
calculated the nematic order parameter, S,15–17 i.e., the
degree of alignment of SWNTs in the sample.
II. SAMPLES AND EXPERIMENTAL
METHODS
We investigated CPs through degenerate pump-probe
spectroscopy measurements on highly-aligned SWNT
thin films transferred onto sapphire substrates. Pat-
terned, vertically aligned SWNT arrays grown by chemi-
cal vapor deposition were subsequently etched with H2O
vapor to allow transffer to sapphire via a dry contact
transfer printing technique, which forms horizontally-
aligned SWNT thin films.25,26 The resulting film pro-
duces aligned nanotubes of the same length, with a di-
ameter distribution centered around 3 nm.26 Figure 1(a)
shows polarization-dependent absorption spectra of a
typical aligned sample in the visible to near-infrared
range, while Fig. 1(b) shows absorption spectra in the
far-infrared or terahertz (THz) range. The polarization
Sapphire
pump probe
Type II
FIG. 2: (color online) Scanning electron microscopy image of
aligned single-walled carbon nanotubes, and the two exper-
imental configurations employed in the current pump-probe
spectroscopy work.
(a) Type I: pump and probe polariza-
tions are fixed and sample orientation is rotated. (b) Type
II: probe and sample orientations are fixed and pump polar-
ization is rotated.
anisotropy is obvious in both (a) and (b), but extreme
in the THz regime (b), as there is virtually zero ab-
sorption when the sample is perpendicular to the THz
polarization.17 Therefore, with such an aligned sample,
our polarization measurements can be extended to in-
clude the sample as an additional rotation parameter,
compared to our earlier study of CP polarization depen-
dence in randomly-aligned SWNTs.21
Using a mode-locked Ti:Sapphire laser with ∼80 fs
pulse width that is shorter than the period of excited
CP oscillations and ∼40 mW average pump power, the
laser was tuned to central wavelength of 850 nm (1.46 eV)
to predominantly excite the E44 interband transitions of
the SWNTs in the sample. A shaker-delay system and
balance detector was employed for fast-scan, real-time
observation of CPs. Extraction of CP oscillations from
raw pump-probe time-domain signal were performed as
previously described.18 As depicted in Fig. 2, two types
of polarization measurements were investigated. Type I
configuration maintained the same polarization for the
60
50
40
30
20
10
6
−
0
1
×
/
T
T
∆
0
0.5
(a) Type I
q = 0°
(b) Type II
f = 0°
15°
30°
45°
60°
90°
15°
30°
45°
60°
90°
)
s
t
i
.
n
u
b
r
a
(
y
t
i
s
n
e
t
n
I
1.5
1.0
Time (ps)
2.0
0.5
1.0
1.5
Time (ps)
2.0
3
Type II
λ = 850 nm
f = 0°
30°
45°
60°
90°
FIG. 3: (color online) Experimental differential transmission
data in the time domain showing coherent phonon oscillations
of the radial breathing mode for different polarization angles
in (a) Type I and (b) Type II configurations (see Fig. 1). The
traces are vertically offset for clarity.
pump and probe, while the alignment axis of the sample
was rotated. Type II configuration maintained the same
orientation for the probe and sample, while the pump
polarization was rotated. For Type II measurements, a
half-wave plate provided 90-degree rotation of the pump.
All measurements were performed at room temperature.
III. EXPERIMENTAL RESULTS
Results of our polarization-dependent ultrafast pump-
probe differential transmission measurements on the
aligned SWNT film for both Type I and Type II ori-
entations are shown in Fig. 3. Here, it is seen that the
typical differential transmission amplitude of the RBM
CP oscillations is on the order of 10−6, with a CP de-
cay time of ∼1.5 ps. This short decay time, compared
to our earlier studies on individually-suspended SWNTs
in solution,18,21,23 is expected with our sample of bun-
dled SWNTs. As the polarization angle is rotated, we
see a strong polarization anisotropy of the RBM CPs as
a function of angle, where the strongest oscillations are
observed at 0◦ while the signal is very nearly completely
quenched at 90◦ for both Type I and Type II geometries.
Figure 4 shows CP spectra for different polarization
angles for Type II configuration. To produce these spec-
tra in the frequency domain, we calculated the Fourier
transform (FT) of the time-domain CP oscillations. The
frequencies of the CP oscillations have a wide range, from
50 to 200 cm−1, which is consistent with the large di-
ameter distribution of nanotubes within the sample.26
The polarization anisotropy is clearly observed in the CP
0
100
200
Frequency (cm-1)
300
FIG. 4: (color online) Coherent phonon spectra for different
polarization angles in Type II configuration obtained through
Fourier transform of the time-domain data in Fig. 3(b). The
traces are vertically offset for clarity.
)
s
t
i
n
u
.
b
r
a
(
y
t
i
s
n
e
n
t
I
t
d
e
a
r
g
e
t
n
I
1.0
0.8
0.6
0.4
0.2
0.0
0
(a) Type I
(b) Type II
30
60
q (°)
90
0
30
60
f (°)
90
FIG. 5: (color online) Spectrally integrated coherent phonon
intensity as a function of angle, measured in (a) Type I and
(b) Type II configurations.
spectra. Figures 5(a) and 5(b) plot the integrated CP in-
tensity of the FT for all excited nanotubes as a function
of θ [in Fig. 5(a)] and φ [in Fig. 5(b)], where θ (φ) is the
angle of rotation for the Type I (Type II) configuration.
IV. THEORY
We have developed a microscopic theory for the gener-
ation of coherent phonons in single-walled carbon nan-
otubes and their detection in coherent phonon spec-
troscopy experiments. Our microscopic theory is de-
scribed in detail in Ref. 22, so we only summarize the
main points here and indicate how our earlier work has
been extended to include polarization-dependent coher-
ent phonon spectroscopy.
We treat the π and π∗ electronic states in (n,m) car-
bon nanotubes using a third-nearest-neighbor extended
tight binding (ETB) formalism developed by Porezag et
al.27 for carbon compounds. Using a density functional
based parametrization, Porezag et al. derived analytic
expressions for the Hamiltonian and overlap matrix ele-
ments that depend only on the C-C bond lengths. Using
the ETB formalism, we obtain tight-binding wave func-
tions and electronic energy levels Esµ(k) where s = c, v
labels the conduction and valence bands, µ labels the cut-
ting lines, and k is the one-dimensional nanotube Bril-
louin zone.1 By exploiting the screw symmetry of the
nanotube, we can block-diagonalize the electronic Hamil-
tonian and overlap matrices into 2×2 blocks, one for each
cutting line, as described in Appendix A of Ref. 22.
We treat nanotube lattice dynamics using a seven-
parameter valence-force-field model described in Ap-
pendix B of Ref. 22. Exploiting the nanotube screw sym-
metry, the dynamical matrix can be block-diagonalized
into 6 × 6 blocks, one for each cutting line, which can
be solved for the phonon displacement vectors and dis-
persion relations ω2
βν(q). In the the dispersion relations,
β = 1,··· , 6 labels the phonon modes, ν is an angu-
lar momentum quantum number, and q is the phonon
wave vector in the one-dimensional nanotube Brillouin
zone. Following the work of Jiang et al.28 and Lobo and
Martins,29 we include four types of force field potentials,
i.e., the bond stretching, in-plane bond bending, out-of-
plane bond bending, and bond twisting potentials. Our
force-field potential energies are invariant under rigid ro-
tations and translations (force constant sum rule), and,
as a result, our phonon model correctly predicts the dis-
persion relation for the long-wavelength flexure modes.22
The electron-phonon interaction is treated in a second-
quantized formalism where the electron-phonon inter-
action matrix elements are evaluated in Appendix C
of Ref. 22.
In calculating electron-phonon matrix ele-
ments, we use 2pz graphene atomic wave functions and
screened atomic potentials obtained from an ab initio
calculation.28
We obtain equations of motion for coherent phonon
amplitudes using the Heisenberg equations as described
by Kuznetsov and Stanton.30 We assume that the opti-
cal pulse and photoexcited carrier distributions are dis-
tributed uniformly over the nanotube. In this case, only
the ν = q = 0 phonon modes are excited. To excite
RBM coherent phonons, the laser pulse must be short
in comparison with the RBM phonon oscillation period.
4
For coherent RBM phonons, the coherent phonon ampli-
tude is proportional to the tube diameter D(t). The tube
diameter, being proportional to the coherent phonon am-
plitude, satisfies a driven oscillator equation
∂2D(t)
∂t2 + ω2D(t) = S(t)
(1)
where ω is the angular frequency of the ν = q = 0 RBM
phonon mode. The driving function S(t) for RBM co-
herent phonons is given by
S(t) ∝ −Xsµk
Msµ(k)(cid:2)fsµ(k, t) − f 0
sµ(k)(cid:3)
(2)
where Msµ(k) is the driving function kernal for RBM co-
herent phonons defined in Eq. (12) of Ref. 22 and fsµ(k, t)
and f 0
sµ(k) are the time-dependent and initial equilibrium
carrier distribution functions, respectively.
From Eq. (2) we see that the driving function depends
on the photoexcited carrier distribution functions. We
treat photoexcitation of carriers in a Boltzmann equa-
tion formalism and obtain the photogeneration rate us-
ing Fermi's golden rule. In Ref. 22 we only considered
linearly-polarized laser pulses with the electric polariza-
tion vector parallel to the nanotube axis. For parallel po-
larization, optical transitions only occur between states
with the same cutting line index µ, and the resulting
photogeneration rate is given by Eq. (13) in Ref. 22.
In the present work, we consider linearly-polarized
pump and probe beams in which the electric polariza-
tion vector makes a finite angle with the nanotube axis.
If ǫ is the unit electric polarization vector for the pump,
then the photogeneration rate is now given by
∂fsµ(k)
∂t
=
(cid:12)(cid:12)(cid:12)(cid:12)gen
8π2e2 u(t)
n2
g (ω)2 (cid:18) 2
×(cid:16)fs′µ′ (k, t) − fsµ(k, t)(cid:17) δ(cid:16)∆Eµµ′
m0(cid:19)Xs′µ′ ǫ · ~P µµ′
ss′ (k) − ω(cid:17)
ss′ (k)2
(3)
where ∆Eµµ′
ss′ (k) = Esµ(k) − Es′µ′ (k) are the k-
dependent transition energies, ω is the pump photon
energy, u(t) is the time-dependent energy density of the
pump pulse, e is the electronic charge, m0 is the free
electron mass, and ng is the index of refraction in the
surrounding medium. To account for spectral broaden-
ing of the laser pulses, the delta function in Eq. (3) was
replaced with a Lorentzian lineshape31
δ(∆E − ω) →
Γp/(2π)
(∆E − ω)2 + (Γp/2)2
(4)
In Eq. (3), ~P µµ′
ss′ (k) are the dipole-allowed optical ma-
trix elements between the initial and final states where µ
and µ′ are initial and final state cutting lines. For polar-
ization parallel to the tube axis (taken to be z), µ′ = µ
and z · ~P µµ
ss′ (k) with the right hand side being
defined in Eq. (14) of Ref. 22. For linear polarization
ss′ (k) = P µ
parallel to the x axis, µ′ = µ ± 1 and in the notation of
Ref. 22, we have
ss′
x · ~P µ,µ±1
×XrJ
(k) =
√2m0
1
2 Xr′
C ∗
r′ (s′, µ ± 1, k)
Cr(s, µ, k) eiφJ(k,µ) (cid:0)Mx(r′, rJ) ± iMy(r′, rJ)(cid:1)
Similarly, for linear polarization along the y axis, we have
(5)
(a)
E44
)
1
-
m
c
4
0
1
(
(38,0)
E77
)
V
e
(
y
g
r
e
n
E
1
0
-1
y · ~P µ,µ±1
ss′
(k) = ∓ i(cid:0)x · ~P µ,µ±1
ss′
(k)(cid:1)
(6)
-0.4 -0.2
0.0
0.2
0.4
8
6
4
2
0
5
(b)
00
150
300
450
600
900
E44
2
1
0
3
Photon Energy (eV)
E44
(d)
RBM
10.91 meV
Type II
(38,0)
0
30
60
90
Angle (deg.)
In Eqs. (5) and (6), the atomic dipole matrix element
vectors (which can be evaluated analytically) are given
by
M(r′, rJ) = Z dr ϕ∗
r′ 0(r − Rr′ 0) ∇ ϕrJ(r − RrJ)
(7)
where the 2pz orbitals ϕrJ are defined in Eq. (C3) of
Ref. 22.
In our experiments, a probe pulse is used to mea-
sure the time-varying absorption coefficient. In our the-
ory, the time-varying optical properties measured by the
probe pulse are obtained from the imaginary part of the
dielectric function. For a linearly polarized probe pulse,
we have
)
s
t
i
n
u
.
b
r
a
(
r
e
w
o
P
k ( /T)
E44
E77
(c)
)
s
t
i
n
u
.
b
r
a
(
r
e
w
o
P
d
e
a
r
g
e
n
t
t
I
00
150
300
450
600
900
2
1
Pump Energy (eV)
3
ε2(ω, t) =
8π2e2
At(ω)2 (cid:18) 2
m0(cid:19) Xss′µµ′Z dk
π ǫ · ~P µµ′
ss′ (k)2
×(cid:16)fsµ(k, t) − fs′µ′ (k, t)(cid:17) δ(cid:16)∆Eµµ′
ss′ (k) − ω(cid:17)
(8)
where At = π(dt/2)2 is the cross-sectional area of
the tube and dt is the equilibrium nanotube diameter.
The dirac delta function is replaced by a broadened
Lorentzian of the form shown in Eq. (4). The photon
energy of the probe pulse photons is ω, and ǫ is the
probe unit polarization vector. In our experiments, the
photon energy ω is the same for both pump and probe,
while the polarization vector ǫ may be different for pump
and probe. To obtain the computed coherent phonon
spectrum, we take the power spectrum of the computed
differential transmission signal after background subtrac-
tion using the Lomb periodogram algorithm described in
Ref. 32.
V. COMPARISON OF THEORY AND
EXPERIMENT
To compare experiment with theory, we performed
simulations of polarization-dependent CP spectroscopy
on a (38,0) zigzag nanotube. This is a mod-2 semicon-
ducting tube with a diameter of 3.01 nm. Our sample
contains an ensemble of nanotubes with diameters cen-
tered around 3 nm,26 and we expect that (38,0) tubes
FIG. 6: (color online) (a) Theoretical bandstructure for (38,0)
nanotubes showing the strong E44 and E77 transitions for a
polarization vector parallel to the tube. The wavevector k is
expressed in units of π/T where T = 4.31 A is the length of
the translational unit cell. (b) Computed absorption spectra
for polarization angles varying from 0◦ (parallel to tube) to
90◦ (perpendicular to tube). (c) Coherent phonon spectra as
a function of pump energy and pump polarization angle φ for
RBM coherent phonons (ω = 10.91 meV). Coherent phonon
spectra are Fourier transforms of computed time dependent
differential transmission for Type II pump-probe experiments.
(d) Integrated power (black dots) obtained by taking the area
under the computed E44 peaks in lower left panel. We fit (red
curve) the theoretical calculations to A cosp(φ) where A and
p = 4.017 are fitting parameters.
will contribute strongly to the CP signal for the ensem-
ble since (i) the (38,0) tube has a diameter in the center of
the measured diameter distribution and (ii) mod-2 zigzag
tubes tend to have very strong intrinsic CP signals.18,22,23
Our theoretical results for the (38,0) nanotube are
shown in Fig. 6. Our computed electronic π band struc-
ture for the (38,0) tube is shown in Fig. 6(a). The bands
are doubly degenerate with two distinct cutting lines cor-
responding to each band. The π valence bands have neg-
ative energy, and the π∗ conduction bands have posi-
tive energy. For z-polarized light, the allowed E44 and
E77 transitions (selection rule ∆µ = 0) giving rise to the
strongest CP signals are indicated by vertical arrows.
The absorption coefficient for (38,0) nanotubes as a
function of linearly-polarized photon energy is shown in
Fig. 6(b) for polarization angles varying from 0◦ (parallel
to tube) to 90◦ (perpendicular to tube).
For the (38,0) nanotube, the RBM phonons have a
computed energy ω = 10.91 meV and an oscillation
period of 379 fs. We simulate the generation of RBM
coherent phonons by pumping with a 50 fs pump pulse,
which is much shorter than the RBM oscillation period.
Polarization-dependent CP spectra for RBM coherent
phonons are shown in Fig. 6(c) for pump polarization
angles φ ranging from 0◦ to 90◦. In these simulations,
the probe polarization is kept fixed parallel to the tube
axis (Type II geometry). As can be seen in the figure, the
CP signal is maximum when the pump is polarized paral-
lel to the tube. As the pump photon energy is varied, we
excite RBM coherent phonons by successively photoex-
citing carriers in different bands. The strongest RBM
CP signals are obtained by pumping at the E44 and E77
transitions. As the pump polarization angle increases,
the RBM CP signal decreases until it is finally quenched
when the pump polarization is perpendicular to the tube.
By taking the area under the RBM CP signal curves in
the vicinity of the computed E44 transition energy near
1.48 eV, we obtain the integrated power as a function of
pump polarization angle shown as black dots in Fig. 6(d).
The integrated CP power can be well fit with a fitting
function of the form A cosp(θ), where A and p = 4.017
are fitting parameters.
The polarization dependence of the RBM CP inte-
grated power in Fig. 6(d) can be understood by examin-
ing Fig. 7. In Fig. 7(b) we plot the coherent RBM diame-
ter oscillations as a function of the pump polarization an-
gle θ. Fitting the theoretical results to A cosp(θ), we ob-
tain p = 2.11 as indicated in the figure. For the RBM di-
ameter oscillations we get p ∼ 2 which makes sense. The
driving function S(t) is proportional to the photogener-
ated carrier density as seen in Eq. (2) and this in turn is
proportional to the squared optical matrix element which
has a cos2(θ) angular dependence3. In Fig. 7(a) we plot
the amplitude of the time-dependent differential trans-
mission oscillations measured by the probe beam after
background subtraction. For the differential transmission
signal, we get p ∼ 2 for Type II and p ∼ 4 for Type I.
This also makes sense. In Type II experiments the probe
polarization is parallel to the tube axis and the pump po-
larization angle θ is varied. In this case the signal should
be proportional to the amplitude of the diameter oscil-
lations. In Type I experiments on the other hand, the
pump and probe polarizations are parallel and we should
get an extra factor of cos2(φ) to account for anisotropy
of the probe beam absorption. In our CP spectroscopy
measurements, we extract the power spectrum of the dif-
ferential transmission oscillations. The CP power spec-
trum should be proportional to the square of the am-
plitude of the differential transmission signal which we
anticipate will give us a cos4(φ) polarization dependence
6
(a)
1.64
(b)
3.65
Type I
Type II
(38,0)
E44
2.11
1.0
0.5
0.0
0.04
0.02
)
.
b
r
a
(
e
d
u
t
i
l
p
m
A
T
T
/
)
A
(
e
d
u
t
i
l
p
m
A
M
B
R
0.00
-90
-60
RBM
10.91 meV
-30
30
0
Angle (degrees)
60
90
FIG. 7: (color online) In (b) we plot the amplitude of RBM
coherent phonon oscillations as a function of the pump polar-
ization angle (θ or φ) for a (38,0) nanotube photoexcited by
a 50 fs pump at the theoretical E44 transition. In (a) we plot
the amplitude of the resulting differential transmission signal
for Type I and II experiments as a function of angles θ and φ
respectively. Our results are fit to A cosp(θ) [A cosp(φ)] where
numerical values of the best fit p are indicated in the figure.
for Type II CP spectroscopy experiments and a cos8(θ)
dependence for Type I CP spectroscopy experiments.
The experimental integrated CP power is obtained by
taking the Fourier transform power spectrum of the time-
dependent differential transmission data shown in Fig. 3
and then computing the area under the E44 peak in the
resulting spectrum. The results for our Type I and Type
II experiments are shown in Fig. 8, where the experi-
mental data points are plotted as downward-pointing red
triangles and the corresponding theoretical predictions
are shown as upward-pointing black triangles. In over-
laying the experimental and theoretical data points, we
subtracted a background from the experimental data to
obtain complete quenching at 90◦. We then rescaled ex-
perimental and theoretical data (both in arbitrary units)
so that the integrated power at 0◦ is equal to unity. We
then fit experimental and theoretical data to functions
of the form A cosp(θ) [A cosp(φ)]. The best fit functions
for our experimental and theoretical results are shown in
Fig. 8 as solid red and dashed black lines, respectively.
For the Type II experiments, where the probe po-
larization is fixed parallel to the average tube orienta-
tion, we get decent agreement between theory and ex-
periment with best fit parameters p = 4.017 for theory
and p = 3.630 for experiment. For the Type I exper-
iments, where pump and probe polarization vectors are
parallel to each other, there is a discrepancy between the-
ory and experiment. As can be seen in Fig. 8(a), the best
)
s
t
i
n
u
.
b
r
a
(
r
e
w
o
P
d
e
t
a
r
g
e
t
n
I
1.0
0.8
0.6
0.4
0.2
E44
(a)
Type I
pump
probe
e
b
u
t
Type II
e
b
u
t
e
b
o
r
p
(b)
pump
8.308
Theory
(38,0)
4.435
Expt
3.630
Expt
4.017
Theory
(38,0)
0.0
0
30
60
30
Angle (degrees)
0
60
90
7
1.0
0.8
0.6
0.4
0.2
0.0
0
30
Standard Deviation
Angle degrees)
0
10
20
30
(a)
Type I
A cos8(
(b)
Type II
A cos4(
60
0
30
Angle (degrees)
60
90
)
s
t
i
n
u
.
b
r
a
(
r
e
w
o
P
d
e
t
a
r
g
e
t
n
I
FIG. 8:
(color online) Integrated RBM coherent phonon
power as a function of (a) θ for Type I and (b) φ for Type
II experiments pumping close to the E44 transition. Experi-
mental data points are red downward pointing triangles fit by
a solid red line. Theoretical data points for a (38,0) nanotube
are black upward pointing triangles and are fit by a black
dashed line. The fitting functions are of the form A cosp(θ)
and A cosp(φ) where the numerical values of the best fit p are
indicated in the figure. The experimental curves have under-
gone background subtraction to obtain complete quenching
at an angle of 90◦ and then rescaled so the integrated power
at an angle of 0◦ is equal to unity.
fit parameters are p = 8.308 for theory and p = 4.435 for
experiment. The experimental fits in Fig. 8 would imply
that the CP intensity scales roughly as cos4(θ) indepen-
dently of the probe polarization. This seems unlikely
given the anisotropy of the absorption coefficient in car-
bon nanotubes. In fact, from our theory, we would expect
p ∼ 4 for Type II and p ∼ 8 for Type I.
We believe that the cause of this discrepancy is most
likely due to misalignment effects. Our sample consists
of an ensemble of nanotubes lying horizontally on a sap-
phire substrate. While the tubes are highly-aligned, they
are not perfectly aligned. To consider the effects of mis-
alignment on the experimentally-measured integrated CP
intensity in a Type I experiment, we assume that the tube
alignment angles on the transferred film are described by
a Gaussian distribution function with a small standard
deviation ∆θ. If the angle between the pump polariza-
tion vector and the ensemble averaged tube axis is θ, then
the angles ϑ between the pump polarization vector and
the axes of each tube in the ensemble are described by a
Gaussian distribution
P (ϑ, θ, ∆θ) =
1
√2π(∆θ)
exp(cid:18)−
(ϑ − θ)2
2(∆θ)2 (cid:19)
(9)
If the integrated RBM coherent phonon power for each
nanotube in the ensemble is given by A cosp(ϑ), the en-
semble averaged integrated power Icp(θ, ∆θ) is obtained
FIG. 9: (color online) Effects of tube misalignment on inte-
grated coherent phonon power for an ensemble of nanotubes
with tube axis orientation angles following a Gaussian distri-
bution. (a) Type I fitting function A cosp(θ) with p = 8 and
(b) Type II fitting function A cosp(φ) with p = 4.
by taking the ensemble average over ϑ
Icp(θ, ∆θ) = A Z ∞
−∞
dϑ P (ϑ, θ, ∆θ) cosp(ϑ)
(10)
In Eq. (10), we extended the integration limits on ϑ to
infinity in the limit of small ∆θ.
If p is a positive in-
teger, Icp(θ, ∆θ) can be found analytically. Otherwise,
it can be evaluated numerically. In the case of Type II
experiments, the ensemble averaged integrated power is
obtained by replacing θ with φ in Eqs. (9) and (10).
The effects of nanotube misalignment on the integrated
CP power fitting function for an ensemble of Gaussian
misaligned tubes is illustrated in Fig. 9, assuming p =
8 for Type I and p = 4 for Type II experiments. As
the standard deviations ∆θ [∆φ] increase, quenching of
the CP intensity is reduced and Icp(θ, ∆θ) [Icp(φ, ∆φ)]
become flatter.
Using this model, we are able to get reasonable fits to
the experimentally measured CP intensity in both Type I
and Type II experiments. We assume a fitting function of
the form A cosp(θ + ∆θ) + B [A cosp(φ + ∆φ) + B], where
A and B are background subtraction and rescaling pa-
rameters and ∆θ [∆φ] is a random Gaussian distributed
misalignment angle (standard deviation ∆θ [∆φ]).
In
our fitting procedure, we set p = 8 for Type I and p = 4
for Type II and use the same standard deviation for the
tube misalignment angles in fitting both Type I and II
data. The results of our fitting procedure are shown
in Fig. 10, where the best fits for Type I and Type
II geometries are shown as dashed black and solid red
lines, respectively. Our best fit standard deviation is
∆θ = ∆φ = 18.7◦, which implies that the tube align-
ment angles on the sapphire substrate are 0◦ ± 9.35◦.
)
s
t
i
n
u
.
b
r
a
(
r
e
w
o
P
d
e
t
a
r
g
e
t
n
I
1.0
0.8
0.6
0.4
0.2
0.0
0
p = 8
Type I
pu m p
pro b e
e
b
u
t
p = 4
Type II
pu m p
e
b
o
r
p
e
b
u
t
Type I
Type II
30
E44
Experiment
90
60
120
Angle (degrees)
150
180
FIG. 10: (color online) Experimental integrated RBM coher-
ent phonon power for the E44 transition as a function of θ for
Type I (black upward pointing triangles) and φ for Type II
(red downward pointing triangles) experiments. Type I exper-
iments are fit to A cosp(θ+∆θ)+B where p = 8 (black dashed
line) and Type II experiments are fit to A cosp(φ+∆φ)+B for
p = 4 (solid red line). A and B are background subtraction
and rescaling parameters and the standard deviations for the
random tube axis misalignment ∆θ and ∆φ are restricted to
be the same for both Type I and II.
For small ∆θ (measured in radians) the nematic order
parameter is S = exp(−2 (∆θ)2) = 0.81.
Although a value of S = 0.81 indicates a strongly
aligned sample, it is not perfectly aligned (S = 1). This
is unlike previous work in the THz regime with these
highly-aligned samples, where the nematic order param-
eter was calculated to be exactly S = 1.17 It is clear that
there is a wavelength dependence of the nematic order
parameter, but we believe this can be explained quali-
tatively: any slight misalignment in the sample would
go undetected in the THz regime, as the wavelength is
much larger than our visible wavelengths that can de-
tect the misalignments. This could explain the differ-
ence in calculated nematic order parameter between our
8
CP measurements and previous THz measurements, but
nonetheless, regardless of the calculated differences with
wavelength, our calculated nematic order parameter is
still quite large and we can confidently confirm the high
degree of alignment of the sample with our CP measure-
ments.
VI. CONCLUSION
In summary, we
investigated the polarization
anisotropy of coherent phonon dynamics in highly-
aligned single-walled carbon nanotubes and measured
RBM coherent phonons as a function of polarization
angle. We saw a very nearly complete quenching of
the RBM for both geometries and extended our results
to determine the degree of alignment of the sample.
Comparing our
results with theory, we performed
simulations of polarization-dependent CP spectroscopy
on a (38,0) zigzag nanotubes and also found a decrease
in CP signal as optical polarization varies from parallel
to perpendicular to the nanotube axis. Using those
simulated results, we also theoretically determined a
cos8(θ) dependence for Type I CP spectroscopy experi-
ments and a cos4(φ) polarization dependence for Type II
CP spectroscopy experiments.
Including misalignment
effects to our fitting, we finally determined the nematic
order parameter of our sample to be 0.81.
Acknowledgments
This work was supported by the National Science
Foundation under grant numbers DMR-0325474, OISE-
0530220, and DMR-0706313, the Robert A. Welch foun-
dation under grant number C-1509, and the Office of
Naval Research (ONR) under contract number 00075094.
Y.-S. Lim and K.-J. Yee are supported by a Korea Science
and Engineering Foundation (KOSEF) grant funded by
the Korean Government (Most) (R01-2007-000-20651-0).
We acknowledge useful discussions with Andrew Rinzler
at the University of Florida.
∗ kono@rice.edu; www.ece.rice.edu/~kono; corresponding
author.
1 R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physi-
cal properties of carbon nanotubes (World Scientific, Sin-
gapore, 2003).
2 J.-C. Charlier, X. Blase, and S. Roche, Rev. Mod. Phys.
79, 643 (2007).
M. S. S. Dantas, M. A. Pimenta, A. M. Rao, R. Saito,
C. Liu, and H. M. Cheng, Phys. Rev. Lett. 85, 2617 (2000).
6 Z. M. Li, Z. K. Tang, H. J. Liu, N. Wang, C. T. Chan,
R. Saito, S. Okada, G. F. Li, J. S. Chen, N. Nagasawa,
et al., Phys. Rev. Lett. 87, 127401 (2001).
7 A. Hartschuh, H. N. Pedrosa, L. Novotny, and T. D.
Krauss, Science 301, 1354 (2003).
3 H. H. Gommans, J. W. Alldredge, H. Tashiro, J. Park,
J. Magnuson, and A. G. Rinzler, J. Appl. Phys. 88, 2509
(2000).
4 G. S. Duesberg, I. Loa, M. Burghard, K. Syassen, and
S. Roth, Phys. Rev. Lett. 85, 5436 (2000).
8 M. F. Islam, D. E. Milkie, C. L. Kane, A. G. Yodh, and
J. M. Kikkawa, Phys. Rev. Lett. 93, 037404 (2004).
9 H. Ajiki and T. Ando, J. Phys. Soc. Jpn. 62, 2470 (1993).
10 J. P. Lu, Phys. Rev. Lett. 74, 1123 (1995).
11 M. A. L. Marques, M. d'Avezac, and F. Mauri, Phys. Rev.
5 A. Jorio, G. Dresselhaus, M. S. Dresselhaus, M. Souza,
B 73, 125433 (2006).
12 S. Zaric, G. N. Ostojic, J. Kono, J. Shaver, V. C. Moore,
R. H. Hauge, R. E. Smalley, and X. Wei, Nano Lett. 4,
2219 (2004).
13 S. Zaric, G. N. Ostojic, J. Kono, J. Shaver, V. C. Moore,
M. S. Strano, R. H. Hauge, R. E. Smalley, and X. Wei,
Science 304, 1129 (2004).
14 M. F. Islam, D. E. Milkie, O. N. Torrens, A. G. Yodh, and
J. M. Kikkawa, Phys. Rev. B 71, 201401 (2005).
15 J. Shaver, A. N. G. Parra-Vasquez, S. Hansel, O. Portugall,
C. H. Mielke, M. von Ortenberg, R. H. Hauge, M. Pasquali,
and J. Kono, ACS Nano 3, 131 (2009).
16 T. A. Searles, Y. Imanaka, T. Takamasu, H. Ajiki,
J. A. Fagan, E. K. Hobbie, and J. Kono, arXiv (2010),
1001.0524v1.
17 L. Ren, C. L. Pint, L. G. Booshehri, W. D. Rice, X. Wang,
D. J. Hilton, K. Takeya, I. Kawayama, M. Tonouchi, R. H.
Hauge, et al., Nano Lett. 9, 2610 (2009).
18 Y.-S. Lim, K.-J. Yee, J.-H. Kim, E. H. H´aroz, J. Shaver,
J. Kono, S. K. Doorn, R. H. Hauge, and R. E. Smalley,
Nano Lett. 6, 2696 (2006).
19 A. Gambetta, C. Manzoni, E. Menna, M. Meneghetti,
G. Cerullo, G. Lanzani, S. Tretiak, A. Piryatinski, A. Sax-
ena, R. L. Martin, et al., Nature Physics 2, 515 (2006).
20 K. Kato, K. Ishioka, M. Kitajima, J. Tang, R. Saito, and
H. Petek, Nano Lett. 8, 3102 (2008).
21 J.-H. Kim, J. Park, B. Y. Lee, D. Lee, K.-J. Yee, Y.-S.
Lim, L. G. Booshehri, E. H. H´aroz, J. Kono, and S.-H.
Baik, J. Appl. Phys. 105, 103506 (2009).
9
22 G. D. Sanders, C. J. Stanton, J.-H. Kim, K.-J. Yee, Y.-S.
Lim, E. H. H´aroz, L. G. Booshehri, J. Kono, and R. Saito,
Phys. Rev. B 79, 205434 (2009).
23 J.-H. Kim, K.-J. Han, N.-J. Kim, K.-J. Yee, Y.-S. Lim,
G. D. Sanders, C. J. Stanton, L. G. Booshehri, E. H. H´aroz,
and J. Kono, Phys. Rev. Lett. 102, 037402 (2009).
24 Y.-S. Lim, J.-G. Ahn, J.-H. Kim, K.-J. Yee, T. Joo, S.-H.
Baik, E. H. H´aroz, L. G. Booshehri, and J. Kono, ACS
Nano (2010), published online on May 13, 2010.
25 C. L. Pint, Y.-Q. Xu, M. Pasquali, and R. H. Hauge, ACS
Nano 2, 1871 (2008).
26 C. L. Pint, Y.-Q. Xu, S. Moghazy, T. Cherukuri, N. T.
Alvarez, E. H. H´aroz, S. Mahzooni, S. K. Doorn, J. Kono,
M. Pasquali, et al., ACS Nano 4, 1131 (2010).
27 D. Porezag, T. Frauenheim, T. Kohler, G. Seifert, and
R. Kaschner, Phys. Rev. B 51, 12947 (1995).
28 J.-W. Jiang, H. Tang, B.-S. Wang, and Z.-B. Su, Phys.
Rev. B 73, 235434 (2006).
29 C. Lobo and J. L. Martins, Z. Phys. D 39, 159 (1997).
30 A. V. Kuznetsov and C. J. Stanton, Phys. Rev. Lett. 73,
3243 (1994).
31 S. L. Chuang, Physics of Optoelectronic Devices (Wiley,
New York, 1995).
32 W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P.
Flannery, Numerical Recipes (Cambridge University Press,
New York, 1992).
|
1607.04802 | 2 | 1607 | 2016-09-07T10:45:25 | Heat production and error probability relation in Landauer reset at effective temperature | [
"cond-mat.mes-hall",
"cond-mat.stat-mech"
] | The erasure of a classical bit of information is a dissipative process. The minimum heat produced during this operation has been theorized by Rolf Landauer in 1961 to be equal to $k_B T \ln 2$ and takes the name of Landauer limit, Landauer reset or Landauer principle. Despite its fundamental importance, the Landauer limit remained untested experimentally for more than fifty years until recently when it has been tested using colloidal particles and magnetic dots. Experimental measurements on different devices, like micro-mechanical systems or nano-electronic devices are still missing. Here we show the results obtained in performing the Landauer reset operation in a micro-mechanical system, operated at an effective temperature. The measured heat exchange is in accordance with the theory reaching values close to the expected limit. The data obtained for the heat production is then correlated to the probability of error in accomplishing the reset operation. | cond-mat.mes-hall | cond-mat |
Heat production and error probability relation in
Landauer reset at effective temperature
Igor Neri1,2,*,+ and Miquel L ´opez-Su´arez1,!,+
1NiPS Laboratory, Dipartimento di Fisica e Geologia, Universit`a degli Studi di Perugia, 06123 Perugia, Italy
2INFN Sezione di Perugia, via Pascoli, 06123 Perugia, Italy
*igor.neri@nipslab.org
!miquel.lopez@nipslab.org
+these authors contributed equally to this work
ABSTRACT
The erasure of a classical bit of information is a dissipative process. The minimum heat produced during this operation has
been theorized by Rolf Landauer in 1961 to be equal to kBT ln 2 and takes the name of Landauer limit, Landauer reset or
Landauer principle. Despite its fundamental importance, the Landauer limit remained untested experimentally for more than
fifty years until recently when it has been tested using colloidal particles and magnetic dots. Experimental measurements
on different devices, like micro-mechanical systems or nano-electronic devices are still missing. Here we show the results
obtained in performing the Landauer reset operation in a micro-mechanical system, operated at an effective temperature. The
measured heat exchange is in accordance with the theory reaching values close to the expected limit. The data obtained for
the heat production is then correlated to the probability of error in accomplishing the reset operation.
Introduction
The minimum energy required to reset one bit of information represents one of the fundamental limits of computation arising
when one bit of information is erased or destroyed. Starting with a system encoding two possible states with the same
probability and finishing the procedure with only one possible state, the variation of entropy in the system is equal to the
difference of entropy between the final state and the initial one, D S = kB ln 1 − kB ln 2 = −kB ln 2. On average this reduction
of entropy has to be accompanied with an increase of heat in the surrounding environment in order to not violate the second
law of thermodynamics, QL ≥ kBT ln 2. This limit takes the name of Landauer limit and was theorized by Rolf Landauer in
the 60's1, and remained untested for over fifty years. The development of computational methods allowed to evaluate tiny
amounts of heat exchanged and recent technical advances in micro- and nano-fabrication made possible to recently test the
validity of the Landauer principle. In particular, the first experimental verification of the Landauer principle has been carried
out by B´erut et al. using a colloidal particle trapped in optical tweezers2. More recently Jun et al. presented similar results
considering a colloidal particle in a feedback trap3. Finally, the last experimental verification of the Landauer limit has been
performed by Hong et al. in a nanomagnetic system4. In this case information is encoded in the magnetization state of the
system while an external magnetic field is used in order to flip between two preferred magnetization states. The evaluation
of the heat produced during the reset operation was demonstrated to be compatible with the Landauer limit. Even if there is
no doubt nowadays on the validity of the Landauer principle, the test on micro-mechanical systems is still missing. We have
recently shown that it is possible to use electro-mechanical devices to accomplish basic5 and complex logic operations6 with
an arbitrarily low energy expenditure. Therefore the possibility to use this class of devices for memory storage completes the
logic architecture for a complete computing device.
In the following we show the measurement on heat production when performing the reset operation in a novel memory unit
based on a bistable mechanical cantilever at effective temperature. The results are in good agreement with the Landauer limit.
The dependence of the dissipation with the error rate is also investigated showing a trend in accordance with the theory10.
Results
Bistable micro-mechanical system
The mechanical system used to perform the experiment is depicted in Figure 1 (a). A triangular micro-cantilever, 200µm long,
is used to encode one bit on information. In order to obtain two stable states two magnets with opposite magnetization are
placed on the tip of the cantilever and on a movable stage facing the cantilever. In this way, depending on the distance between
the magnets, d, and the relative lateral alignment, D x, it is possible to induce bistability on the system. Figure 1 (b) shows
the potential energy as a function of d reconstructed from the probability density function of the position of the cantilever
at equilibrium, r (x,d) = A exp(−U(x,d)/kBT ), which implies that U(x,d) = −kBT lnr (x,d) + U0
2. When the magnets are
far away the effect of the repulsive force is negligible, the system is then monostable and can be approximated to a linear
system. Decreasing the distance the repulsive force between magnets tends to soften the system up to the point where two
stable positions appear. The effect of reducing even more d is to enlarge the separation of the rest states and to increase the
potential barrier separating these two wells. Eventually, when the distance between the magnets is small enough, the system
remains trapped in one well for a period of time larger than the relaxation time of the system. Logic states are encoded in
the position of the cantilever tip: logic 0 for x < 0 and logic 1 for x > 0. The proposed system presents intrinsic dissipative
processes that depend on the maximum displacement of the cantilever tip6. The minimum heat produced when performing a
physical transformation of the system is proportional to x2
max. In our setup it is not possible to reduce the separation between
the two potential wells to a value that bounds the heat produced by intrinsic dissipation below the Landauer limit. Increasing
the effective temperature increases the value for the Landauer limit making possible to have negligible intrinsic dissipation.
A piezoelectric shaker is used to excite the structure with a band limited white Gaussian noise to mimic the effect of an
arbitrary temperature. In the present experiment the white noise is limited to 50kHz, well above the resonance frequency of
the free cantilever ( f0=5.3kHz). The dependence of the effective temperature with the root-mean-squared voltage supplied to
the shaker is reported in Figure 1 (c). The red dot, corresponding to an effective temperature of Teff = 5 × 107 K, highlights
the condition considered in the present case. The solid line represent the expected trend where T (cid:181) V 2
7. The effective
rms
temperature has been estimated computing the power spectral density (PSD) of the system at various piezoelectric noise
excitation voltages. The obtained curves have been fitted with Lorenzian curves taking as reference for the calibration the one
at room temperature (T =300K). The other curves have been used to extract the only varying parameter Teff, corresponding to
the effective temperature of the system under external excitation. Finally two electrostatic probes, placed one on the left and
the other on the right of the cantilever, are used to apply a negative and positive forces respectively. When a voltage different
to zero is applied on one probe the cantilever feels an attractive electrostatic force toward the probe due to the polarization of
the cantilever itself. The voltage on the probes, the distance between the magnets and their time evolution are used to specify
the protocols used in order to change the bit stored in the system as described in the following subsection.
Reset protocol
Varying the magnets distance d the barrier separating the two stable wells varies from the minimum value B0 for d=3.65 a.u.
to Bmax for d=2.8 a.u. Applying a voltage on one probe corresponds to apply a force toward the probe itself. Thus a voltage
on the left probe corresponds to a negative force and a voltage on the right probe corresponds to a positive force. Details of
the force calibration are presented in methods section. In Figure 2 (a) the protocol followed to reset the bit to the state 0 and
1 is presented. The procedure is similar to the ones presented in Refs. 8 and 2. Initially the barrier separating the two stable
states is removed moving the magnet away (red curve in the first panel) making the system monostable. Once the barrier is
removed we apply a negative (positive) force to reset the bit status to 0 (1) applying a finite voltage VL (VR) on the left (right)
probe. This is represented by the magenta curve in Figure 2 (a). Once the force is applied we restore the barrier to its original
value. Finally, we remove the lateral force finishing in the original parameters configuration. At the end of the operation, if
there are no errors the cantilever position encodes the desired bit of information. In order to be sure to perform the operation
starting from both initial states, we mimic a statistical ensemble where the initial probability is 50% to start in the left well
and 50% in the right well. A trace of the cantilever tip position, x, is shown in Figure 2 (a) (black line), where the dashed
blue lines represent the two stable positions once the barrier is restored. When the barrier is removed the system goes from
the local prepared state to an undefined state with a free expansion, the entropy on the system thus increases in a irreversible
manner8, 9. This increment is related to uncontrollable transitions from one well to the other once the barrier height is close to
kBT . These large excursions of the cantilever can be seen in the time series of position. Figure 2 (b) shows a representation
of the time evolution of the potential energy during the set of the bit to the logic state 1. In a first step the barrier is removed
allowing the system to oscillate in a monostable potential landscape. Then the potential is slightly tiled and when the barrier
is restored the system is confined in the desired state. After these stages the bit is set to the state 1. In order to have a reliable
measure of the heat produced during the considered operations, reset protocols are repeated for 800 times in order to have a
large enough statistic.
Heat vs error probability
In the optimal case the initial configuration is a mixed logical 0 and 1 where both states have the same probability while the
final configuration is the selected state with a 100% probability. This corresponds to an entropy variation of D S = −kB ln(2)
and a minimum heat produced of Q ≥ −TD S = QL. It has been shown that the bound QL = −kBT ln(2) applies only for
11. In
symmetric potentials. Considering asymmetries on the system the minimum produced heat can be lowered below QL
our setup the system is slightly asymmetric and we have evaluated the variation of entropy from the initial to the final state
2/8
from the probability density function of the tip position, r (x), being D SG = −0.61kB D SS = −0.68kB for the Gibbs and
Shannon entropy respectively, both close to −kB ln(2).
If we consider the possibility to commit errors during the reset operation the heat produced becomes a function of the
probability of success10:
Q(Ps) ≥ kBT [ln(2) + Ps ln(Ps) + (1 − Ps)ln(1 − Ps)]
(1)
where Ps is the probability of success or success rate. When Ps is 0.5 no reset operation is performed and thus there is no
minimum heat to be produced during the operation3, 10.
In Figure 3 (a) we present the average heat produced for the reset operation as function of the lateral alignment of the
counter magnet D x. When the system is aligned closely to perfection (i.e., D x ≈ 0) we estimate a heat production slightly
above kBT and below two times QL. Asymmetrizing the potential, by means of setting D x 6= 0, the heat produced tends to
decrease reaching values this time below QL. However, in this conditions the error rate in performing the reset operation have
a major role, in fact in this configuration the probability of success, Ps, decrease rapidly. This is represented by the color map
of dots in Figure 3 (a), where green represents higher success rate while blue represents a higher probability of error. In Figure
3 (b) the success rate of the reset operation is reported as function of the lateral alignment. Solid violet circles represent the
overall success rate while red and black symbols represent the error rate for resetting to 1 or to 0 respectively. Circles are used
to report the error probability for the same initial and final state while crosses are used for 0 to 1 and 1 to 0 transitions. For
instance let us consider the case where D x < 0: the counter magnet is moved towards the right and as a consequence the 0
state is more favorable respect the 1 state. From Figure 3 (b) we can see that for D x < 0 the probability of resetting toward 0
is almost 100% while the probability of resetting toward 1 decreases rapidly reaching values below 50%. The same behavior
is present in the case D x > 0, where the counter magnet is moved to the left, where the state 1 is more favorable.
We can now correlate the heat produced to the probability of success for resetting to 0 and 1 as presented in Figure 3 (c).
Dashed lines represent the Landauer limit for a 100% of success rate (≈ 0.7kBT ). While in both cases the heat produced is
above the Landauer limit, in the reset to 0 case the obtained values are very close to QL. As expected, decreasing the success
rate the obtained values goes below the Landauer limit for both cases accordingly to Equation 1.
As it is well known the adiabatic limit in presence of dissipation mechanisms like viscous damping can be only reached if the
operation is performed slowly when these mechanisms are negligible. We increased the protocol time for the reset operation
from 0.25s up to 3.5s. The results are presented in Figure 3 (d). Increasing the protocol time decreases the heat production
reaching values well below the Landauer limit. Notice that in these cases where Q < QL the Ps is well below 1 since the
system has more time to relax and therefore tends to thermalize before the reset operation is correctly performed. In fact for
protocols lasting more than 1 s the success rate is below 75%.
Discussion
We have measured the intrinsic minimum energy dissipation during the reset of one bit of information in a micro-mechanical
system. We have considered a completely different physical system respect to the existing literature, i.e., micro-electro-
mechanical system. To achieve these results we have performed the experiment at an effective temperature of 5 × 107 K
in order to make the intrinsic dissipation of the mechanical structure negligible respect to the thermodynamic contribution. In
these conditions we have reached values of heat produces consistent with the Landauer limit approaching it closely. Moreover
we presented experimental data relating the minimum heat produced with the probability of success of resetting one bit of
information. Nowadays where there is a lot of attention on micro-electro-mechanical systems able to perform computation
at arbitrary low energy, the achieved results have a significant importance in the development of new computing paradigms
based on systems different from the well established CMOS technology.
Methods
Setup preparation and calibration
The micro-cantilever used is a commercial atomic force microscopy (AFM) probe (NanoWorld PNP-TR-TL12). It is long
200µm, with a nominal stiffness k=0.08Nm−1 and a nominal resonace frequency of 17kHz. A fragment of NdFeB (neodymium)
magnet is attached to the cantilever tip with bi-component epoxy resin. To set the magnetization to a known direction the sys-
tem is heated up to 670K, above its Curie temperature13 in the presence of a strong external magnetic field with the desired
orientation. With this additional mass the resonance frequency decreases to 5.3kHz. The quality factor of the system has been
estimated from the power spectral density of the displacement, x, fitted with a Lorenzian curve, giving a value of Qf = 320.
The deflection of the cantilever, x, is determined by means of an AFM-like laser optical lever. A small bend of the cantilever
provokes the deflection of a laser beam incident to the cantilever tip that can be detected with a two quadrants photo detector.
3/8
The laser beam is focused on the cantilever tip with an optical lens (focal length f =50mm). For small deflections the response
of the photo detector remains linear, thus x = rxD VPD, where VPD is the voltage difference generated by the two quadrants of
the photo detector. In order to determine rx we look at the frequency response of the system as in6 under thermal excitation.
The relation between the measured voltage and the expected displacement gives rx =1.8365 × 10−5m V−1. The system is
placed in a vacuum chamber and isolated from seismic vibrations to maximize the signal-to-noise ratio. All measurements
were performed at pressure P =4.7 × 10−2 mbar.
Effective temperature estimation
As the system is modeled as a harmonic oscillator with one degree of freedom, according to the Equipartition Theorem the
thermal energy present in the system is simply related to the cantilever fluctuations as 1
2 khx2i. According to Parseval's
0 G(w )2 dw where G(w ) stands for the PSD of the system. This takes the form of a Lorenzian function
2 kBT = 1
theorem hx2i =R
G(w ) =s 4kBT
Qfkw 0vuut
(cid:16)1 −
w 2
w 2
0(cid:17)2
1
+ 1
Q2
f
w 2
w 2
0
where w = 2p
only free parameter, T , from the measured PSDs to the expected function G(w ).
f . Once the system has been calibrated at room temperature we estimated the effective temperatures fitting the
Force calibration
A set of two electrodes (see Fig. 1(a)) is used in order to polarize the cantilever producing a bend on the mechanical structure.
Electrostatic forces depend on the voltage applied to the electrodes, i.e. VL and VR for the left and right electrode respectively.
Since the restoring force of the cantilever can be expressed as Fk = −kx, the relation between applied voltage to the probe and
the force acting on the cantilever has been estimated in static conditions assuming Fk = Fel. The relation between the applied
voltages, VL and VR, and the electrostatic force Fel is then fitted with a 9th degree polynomial.
Heat production evaluation
The work performed on the system along a given trajectory x(t) is given by the integral14, 15:
W =Z
0
t p
M(cid:229)
k=1
¶ U(x,lll )
¶l
k
¶l
k
¶ t
dt
(2)
where t p is the protocol time duration, U(x,lll ) is the total potential energy of the system and lll
is a vector containing all the
M control parameters. In our case we have two controls parameter, the voltage applied to the piezoelectric stage to control
the energy barrier, and the electrostatic forces. To obtain the heat produced Q we have to consider the variation in internal
energy, D E. Ideally the potential energy at both the bottom wells is the same, however considering asymmetries on the system
D E can be different from zero. The evaluation of the total energy variation D E is obtained from the reconstructed potential
energy, U, and the variation of the kinetic energy. The latter quantity is however negligible even for the shortest t p, where the
total kinetic energy variation is one order of magnitude lower than QL (1.4 × 10−17J versus 5.3 × 10−16 J). Finally the heat
produced is obtained from Q = W − D E.
References
1. Landauer, R. Irreversibility and heat generation in the computing process. IBM journal of research and development 5,
183 -- 1911961.
2. B´erut, A. et al. Experimental verification of Landauer's principle linking information and thermodynamics. Nature 483,
187 -- 189 (2012).
3. Jun, Y., Gavrilov, M. & Bechhoefer, J. High-precision test of Landauer's principle in a feedback trap. Physical review
letters 113, 190601 (2014).
4. Hong, J., Lambson, B., Dhuey, S. & Bokor, J. Experimental test of Landauer's principle in single-bit operations on
nanomagnetic memory bits. Science Advances 2 (2016).
5. Lopez-Suarez, M., Neri, I. & Gammaitoni, L. Operating micromechanical logic gates below kBT: Physical vs logical
reversibility. In Energy Efficient Electronic Systems (E3S), 2015 Fourth Berkeley Symposium on, 1 -- 2 (IEEE, 2015).
6. Lopez-Suarez, M., Neri, I. & Gammaitoni, L. Sub kBT micro electromechanical irreversible logic gate. Nature Commu-
nication 7 12068 (2016).
4/8
¥
7. Venstra, W. J., Westra, H. J. & van der Zant, H. S. Stochastic switching of cantilever motion. Nature communications 4
(2013).
8. Bennett, C. H. The thermodynamics of computation -- a review. International Journal of Theoretical Physics 21, 905 -- 940
(1982).
9. Crooks, Gavin E. Entropy production fluctuation theorem and the nonequilibrium work relation for free energy differences.
Physical Review E 60.3 2721 (1999).
10. Gammaitoni, L., Chiuchi´u, D., Madami, M. & Carlotti, G. Towards zero-power ICT. Nanotechnology 26, 222001 (2015).
11. Sagawa, Takahiro. Thermodynamic and logical reversibilities revisited. Journal of Statistical Mechanics: Theory and
Experiment 2014.3 P03025 (2014)
12. NanoWorld - AFM tip - PNP-TR-TL - Pyrex-Nitride. http://www.nanoworld.com/pyrex-nitride-triangular-silicon-nitride-
tipless-cantilever-afm-tip-pnp-tr-tl. Accessed: 2016-05-30.
13. Ma, B. et al. Recent development in bonded NdFeB magnets. Journal of magnetism and magnetic materials 239, 418 -- 423
(2002).
14. Seifert, U. Stochastic thermodynamics, fluctuation theorems and molecular machines. Reports on Progress in Physics 75,
126001 (2012).
15. Douarche, F., Ciliberto, S., Petrosyan, A. & Rabbiosi, I. An experimental test of the Jarzynski equality in a mechanical
experiment. EPL (Europhysics Letters) 70, 593 (2005).
Acknowledgements
The authors gratefully acknowledge useful discussion with L. Gammaitoni. The authors acknowledge financial support from
the European Commission (FPVII, Grant agreement no: 318287, LANDAUER and Grant agreement no: 611004, ICT- En-
ergy).
Author contributions statement
M.L.S. and I.N. designed the experiment, performed the measurements, analyzed the measured data and contributed to the
writing of the manuscript.
Data availability statement
The data that support the findings of this study are available from the corresponding author upon request.
Additional information
Competing financial interests The authors declare no competing financial interests.
5/8
Figure 1. Schematic of the whole system and measurement setup. Lateral view of the whole system and measurement setup.
Two magnets with opposite magnetic orientations are used to induce bistability in the system. Two electrodes are used to
apply electrostatic forces on the mechanical structure: VL and VR to force the cantilever to bend to the left (negative x) and to
the right (positive x) respectively. The magnetic interaction can be engineered by changing geometric parameters such as d
and D x. (b) Color-map of the reconstructed potential energy as function of the distance between the magnets, d. The distance
is expressed in arbitrary units proportional to the voltage applied to the piezoelectric stage. Decreasing the distance between
the magnets the potential energy softens and eventually two stable states appear. (c) Dependence of the effective temperature,
Teff, with the root mean square of the white Gaussian voltage applied to the piezoelectric shaker. The red dot represent the
condition accounted for the experimental data presented.
6/8
Figure 2. Reset protocol. (a) Protocol used to perform the reset operation. In order to account for all the possible transitions
we considered the reset to 1 (first two columns) and reset to 0 (last two columnss) starting from both 0 and 1 states. The first
row depict the protocol used for removing the barrier. Once the barrier is removed a lateral force is applied (second row).
The resulting displacement of the cantilever tip is represented in the third row. Once all the forces are removed and the
barrier is restored the cantilever tip encodes the final state. (b) Schematic time evolution of the potential energy and state of
the system for the case presented in the first column of panel (a). The operation starts from a double well potential and in the
first step of the protocol the barrier is removed. During the next step the potential is tilted and the barrier is restored to its
initial value. Finally, the lateral force is removed recovering the initial condition where the barrier between wells is at its
maximum and the electrostatic forces are equal to zero.
7/8
Figure 3. Produced heat and probability of success for the reset operation. (a) Average heat produced during the reset
operation as function of the lateral alignment D x. For D x < 0 the counter magnet is moved to the right and the 0 state (x < 0)
is favorable. Accordingly, for D x > 0 the 1 state is more favorable. Introducing an asymmetry on the potential Q decreases,
which is accounted to the probability of success, Ps, that tends to decrease (Ps is encoded in the color map). (b) Success rate
of the reset operation as function of lateral alignment. Solid violet circles represent the overall success rate while black and
red symbols account for the success rate resetting to 0 and 1 state respectively. The maximum overall success rate is present
when the system is almost symmetric, D x ≈ 0. (c) Relation between success rate and heat dissipated. Red circles correspond
to the resetting to 1 case while black ones correspond to the resetting to 0. (d) Dependence of Q with the protocol time
duration, t p. As t p is increased the effects of frictional phenomena becomes negligible and the produced heat should
approach the thermodynamic limit. However, for large t p the reset operation fails giving a wrong logic output. In these cases,
where the error probability is high, the produced heat is clearly below the Landauer limit. Inset shows the obtained relation
between error probability (1-Ps) and produced heat. The data are compatible with the minimum energy required for a given
error probability as predicted by Eq. 1, represented by dashed line.
8/8
|
1109.0619 | 1 | 1109 | 2011-09-03T13:19:56 | Magnetic Fields Effects on the Electronic Conduction Properties of Molecular Ring Structures | [
"cond-mat.mes-hall"
] | While mesoscopic conducting loops are sensitive to external magnetic fields, as seen by observations of the Aharonov-Bohm (AB) effect in such structures, the field needed to observe the AB periodicity in small molecular rings is unrealistically large. The present study aims to identify conditions under which magnetic field dependence can be observed in electronic conduction through such molecules. We consider molecular ring structures modeled both within the tight-binding (H\"uckel) model and as continuous rings. In fact, much of the observed qualitative behavior can be rationalized in terms of a much simpler two-state model. Dephasing in these models is affected by two common tools: the B\"uttiker probe method and coherence damping within a density matrix formulation. We show that current through a benzene ring can be controlled by moderate fields provided that (a) conduction must be dominated by degenerate (in the free molecule) molecular electronic resonances, associated with multiple pathways as is often the case with ring molecules; (b) molecular-leads electronic coupling must is weak so as to affect relatively distinct conduction resonances; (c) molecular binding to the leads must be asymmetric (e.g., for benzene, connection in the meta or ortho, but not para, configurations) and, (d) dephasing has to be small. Under these conditions, considerable sensitivity to an imposed magnetic field normal to the molecular ring plane is found in benzene and other aromatic molecules. Interestingly, in symmetric junctions (e.g. para connected benzene) a large sensitivity of the transmission coefficient to magnetic field is not reflected in the current-voltage characteristic. Although sensitivity to magnetic field is suppressed by dephasing, quantitative estimates indicate that magnetic field control can be observed under realistic condition. | cond-mat.mes-hall | cond-mat | Magnetic Fields Effects on the Electronic Conduction Properties of
Molecular Ring Structures
Dhurba Rai, Oded Hod and Abraham Nitzan
School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel.
Abstract
While mesoscopic conducting loops are sensitive to external magnetic fields, as is
pronouncedly exemplified by observations of the Aharonov-Bohm (AB) effect in such
structures, the small radius of molecular rings implies that the field needed to observe the AB
periodicity is unrealistically large. In this paper we study the effect of magnetic field on
electronic transport in molecular conduction junctions involving ring molecules, aiming to
identify conditions where magnetic field dependence can be realistically observed. We
consider electronic conduction of molecular ring structures modeled both within the tight-
binding (Hückel) model and as continuous rings. We also show that much of the qualitative
behavior of conduction in these models can be rationalized in terms of a much simpler
junction model based on a two-state molecular bridge. Dephasing in these models is affected
by two common tools: the Büttiker probe method and coherence damping within a density
matrix formulation. We show that current through benzene ring can be controlled by
moderate fields provided that several conditions are satisfied: (a) conduction must be
dominated by degenerate (in the free molecule) molecular electronic resonances, associated
with multiple pathways as is often the case with ring molecules; (b) molecular-leads
electronic coupling must be weak so as to affect relatively distinct conduction resonances; (c)
molecular binding to the leads must be asymmetric (e.g., for benzene, connection in the meta
or ortho, but not para, configurations) and, (d) dephasing has to be small. When these
conditions are satisfied, considerable sensitivity to an imposed magnetic field normal to the
molecular ring plane is found in benzene and other aromatic molecules. Interestingly, in
symmetric junctions (e.g. para connected benzene) the transmission coefficient can show
sensitivity to magnetic field that is not reflected in the current-voltage characteristic. The
analog of this behavior is also found in the continuous ring and the two level models.
1
Although sensitivity to magnetic field is suppressed by dephasing, quantitative estimates
indicate that magnetic field control can be observed in suitable molecular conduction
junctions.
2
1. Introduction
that comprise
junctions
through molecular
transmission
Controlling electron
molecular ring structures by magnetic fields is considered challenging because the required
field strengths are believed to be unrealistically high, of the order of the Aharonov-Bohm
410 Tesla for typical molecular rings.1, 2. In contrast, it was demonstrated
period of ~
theoretically3-6 that the conductance of a nano-size ring can be significantly modulated by
relatively moderate magnetic fields (< 50 Tesla). This large sensitivity to an external
magnetic field results from the presence of sharp resonances that are possible only for low
coupling between the molecular-bridge and the metal-contacts.
Recent studies of electronic conduction through molecular ring structures such as
benzene, biphenyl, azulene, naphthalene and anthracene as well as carbon nanotubes, by us7
and others8-11 have shown that although the net current through these molecules at low metal-
molecule coupling is relatively small, induced circular currents can be considerable. The
magnitude of such a voltage driven ring current depends significantly on the metal-molecule
coupling strength, while its very existence depends on junction geometry, specifically on the
location and symmetry of the molecule-metal contact along the circumference of the ring.
The magnetic field associated with such a circular current at the center of a molecular ring
can be quite significant, for instance, we have found ~ 0.23 Tesla at 2 Volt bias in a tight-
binding model of a meta-connected benzene bridge.7 Possible exploitations of such high local
magnetic fields at the molecular level could come through the realization of carbon nanotubes
as molecular solenoids,11-13 or by controlling the alignment of spin orientation of magnetic
ions embedded in the bridge as suggested in Ref. 14.
Voltage driven circular currents in molecular ring structures are similar in nature to
the persistent currents induced in isolated mesoscopic rings that are threaded by magnetic
fluxes. Both phenomena originate from splitting of degenerate ring electronic states
characterized by opposite orbital angular momenta, either by the magnetic fields or by the
voltage bias even in the absence of external magnetic field.15-19 20 Theoretical studies have
shown that magnetic flux induced persistent currents can be controlled by external
radiation.21, 22 Also, theory indicates that ring currents can be induced by polarized light,23-25
twisted light,26 and other optical coherent control methodologies,27-29 Such optically induced
circular currents can be effectively controlled by externally applied magnetic fields,30 or,
conversely, can be used to control the local magnetic field at the ring,31-33 thereby opening the
possibility to control the orientation of an impurity spin at the ring center.
3
In a recent preliminary study,34 we have reconsidered the possibility of controlling
electrical conduction characteristics of molecular ring structures by static uniform moderate
magnetic fields, following the lead of Refs. 3-6, which indicate that large sensitivity to
magnetic fields may be found in junctions where (a) electronic state degeneracy leads to
interference that can be suitably tuned by the magnetic field, and (b) weak molecule-metal
coupling results in sharp transmission resonances. We have shown that for certain geometries
and under specified conditions magnetic field effects on molecular ring conduction can
become observable. In the present study we analyze in detail the role of molecular geometry
and dephasing on the transport properties of molecular rings such as benzene, biphenyl and
anthracene, subject to external magnetic fields by means of tight-binding (Hückel) molecular
ring models as well as a scattering matrix approach to transmission through continuum loops.
The close similarity between the results obtained from these different models indicates their
generic nature, and provides evidence to the integrity of results obtained for the effect of a
magnetic field in the limited-basis tight binding model (the London approximation). In
addition we show that the essential physics underlying the observed magnetic field
dependence of conduction can be obtained already from a suitably constructed two-state
model. The important role of interference processes implies that the system behavior will
strongly depend on the junction geometry that determines the transmission pathways and on
the effect of dephasing (decoherence) processes resulting from thermal motions in the
junction. In this regard we note that an earlier study35 indicates that increasing electron-
vibration coupling in the junction may lead to sharper resonance structure in the current
dependence on the magnetic field, and therefore to larger sensitivity of conduction to such
field. This however is not simply related to pure dephasing as the effect discusses by Ref. 35
increases at lower temperatures.
The structure of the paper is as follows: in section 2, we present three different models
for electron transmission under the influence of an external magnetic field: (i) A tight-binding
(Hückel) model, which is analyzed using the steady state approach described in our earlier
work7, 36, 37 and (ii) continuum ring model analyzed using scattering theory6. We also describe
(iii) a simple 2-level model that captures the essence of the observed behavior. Section 3
presents results from our model calculations that describe (a) the magnetic field effect on the
transmission probability and the current voltage characteristics of simple molecular ring
junctions of various symmetries; (b) comparison between the tight-binding, continuum and
two-level models and (c) the effect of structure and geometry on the dependence of junction
4
transport properties on the applied magnetic field. The effect of dephasing processes on these
behaviors is discussed in Section 4. Section 5 summarizes our main results and discusses
their implications for further study.
2. Models and Methods
In this section we describe the models used in this work to analyze magnetic field effects on
electron transport through molecular rings. The tight-binding (Hückel) model seems to be the
most suitable for a simple description of molecular transport, however we will see in the
following sections that the main characteristics of the transport behavior are found also in the
continuous ring model. In fact, much of the physics is already contained in an ever simpler
model based on a two-level bridge. These models are described below.
(a) The tight-Binding Model: Scattering theory on a 1-d lattice
We consider a molecular junction formed by a ring molecule bridging the metal leads
(L, R) through two chosen sites on the ring. The molecule is described by a tight-binding
(Hückel) model with on-site energies Mα and nearest-neighbor interactions Mβ . The metal
contacts (L, R) are modeled as infinite 1-dimensional tight-binding periodic arrays of atoms
with lattice constant a and on-site energies and nearest-neighbor coupling matrix elements
Kα and
R LK β K
, respectively. A sketch of such a molecular junction is shown in Fig.
)
,
(
1
Fig. 1. A tight-binding model for current conduction through a molecular ring structure connected to
two 1-dimensional metal leads L and R, at bias voltage V. A static uniform magnetic field B
is
applied perpendicular to the molecular plane.
In the site representation, this TB Hamiltonian is given as
HH
H
H
V
V
,
LM
RM
L
R
M
(1)
5
where
K
1
2
m
1
2
m
H
K
2
p
β
K
p
α
(2)
n
1
e A
nn
nn
1
M R LK
n
;
,
,
, where m and e are the electron mass and charge. We
K n
K n
V
Mm R LKn
nm
mn
β
;
;
,
,
(3)
KM
LM
where n is an orthogonal set of atomic orbitals centered at atomic sites n
). The indices K = L, R and M correspond to the subspaces of the left (L),
M R LK n
(
,
,
right (R) and molecule (M), respectively.
The model (1)-(3) is supplemented by an additional magnetic field B
applied to the
junction, so that the kinetic energy operator of an electron is modified according to
2
assume that the field is uniform, applied in the bridge region only and, for the planar ring-
molecules considered, perpendicular to the molecular plane. In the standard London
approximation38 one (a) represents this field by a vector potential in the symmetric gauge,
, and (b) modifies the finite basis of field-free atomic orbitals
,
1
( )A r
B r
n
r
n
2
where r is measured from the center of atom n, so as to account for the phase difference
between wavefunctions centered on different atomic sites,
A r
i e
) n
(
/
r
r
r
. This leads to a tight binding (Hückel) Hamiltonian with coupling between
A r
A
n
n
atomic sites given by
i e
A
A
r
/
*
dr
r e
r V
n
m
(5)
n
mn
m
For nearest neighbor interactions, r in the exponent is approximately replaced by
/ 2
r
r
, leading to
n
m
where
(4)
n
e
n
n
M e
M
mn
i
mn
n m M
; ,
,
where
mn
A A
m
n
e
B
r
m
r
n
r
m
r
n
e
4
r
r
m n
2
r
n
r
m
B
e
2
and the molecular Hamiltonian is now given by
(6)
(7)
6
)
2
2
)
K
.
K
H
M
mn
i
mn
e
)
r
m
(
E
)
e
(
E
(8)
(
E)
(
E
)
K
i
mn
n n
4
K
m n
n m
(i 2)
Note that
position vectors
2
B
0
(
M
M
n m M
n M
,
is twice the area of the triangle spanned by the vectors, so
r
n
B is the magnetic flux through the triangle spanned by the
, where
mn r
r
/h e
,
is the flux quantum.
, and 0
To evaluate the transmission coefficient associated with this setup one could use the
non-equilibrium Green function method, but here we follow the scattering method used in
Refs. 36 and 37 that gives an easier access to bond currents and, in its density matrix version,
can be generalized to account (approximately) for dephasing processes. In this approach, a
wire or a network of wires described by a tight-binding Hamiltonian is made to carry current
by injecting electrons at one of its sites (source site). At the same time absorption is affected
at the “end sites” of other wires by adding the self-energy term
E
(
)
i
K
2
2
to the site energy. This “absorption” represents the infinite extent of the wire and makes it
possible to describe dynamics in an infinite system by a finite system calculation. For
n
electrons injected at energy E, The steady state wavefunctions are written in the site
representation in the form
C E t n
,
n
n
The orbital coefficients or amplitudes
t
n
nC E obtained by solving the Schrödinger equation
(
)
for steady state situation provide the particle current between any two nearest-neighbor sites
(n, m) on wire K as
2
K
which, in the presence of magnetic field (applied in the molecular region), becomes
2
K
The transmission probability through any exit segment or bond is calculated as the ratio of
inter-site current (bond current) to the incoming particle current, i.e.,
K
J
E
(
)
nm
E
J
(
)
In
C C
Im(
n
)
n m
( ,
)
)
n m
( ,
)
K M
C C
n m
C n
n
(12)
(11)
(10)
(13)
Im(
e
(9)
i E
/
K
(
E
)
J
K
nm
J
K
nm
K
nm
(
E
)
(
E
)
E t
,
e
.
,
m
nmi
.
K
7
.
j
n
j
I n
j
(14)
N segments of nj bonds (
) on which the current has been determined to be Ij, the
Under certain conditions, a bond current in a biased molecular ring structure may exceed the
cI has developed in the ring. In a
net transport current – a signature that a circular current
previous paper,7 we have defined the circular current as the sole source of (bias induced)
magnetic flux through the ring. For a ring comprising n identical bonds, divided by nodes into
N
j n
1
circular current in a ring is given by7
1
n
j
It was also useful to define the circular transmission coefficient7 as the ratio of circular
current to the incoming current as
EJ
(
)
c
J
E
(
)
In
note that this number can be larger than 1.
For a finite bias voltage, the net bond current between any two nearest neighbor sites
in a two-terminal junction is obtained from the Landauer formula
)(E
f K
RLK μ K
where
and
are the Fermi functions and chemical potential of the left
)
,
(
and right leads, respectively. In the calculations reported below, unless otherwise stated, we
have taken the leads temperature to be zero, assumed that the potential bias falls on the metal-
eV
FE
and
molecule interfaces and considered symmetric potential drop, that is
/ 2
L
FE
e
R
))
dE
(
E
) (
f E
(
R
f E
(
L
)
(16)
(15)
V
(
)
/ 2
.
(
E
)
eV
I
mn
c
,
,
I
c
nm
(b) Scattering in the continuous ring model
Next, we consider the continuous ring model, in which the junction comprises a one-
dimensional (1D) conducting ring connecting between two 1D leads (Fig. 2a). The symmetry
of the scattering process is imposed through the angle γ between the leads, 39 and the
properties of the ring-lead contact are embedded in the imposed junction scattering
amplitudes (Fig. 2b) as detailed below.
8
(b)
(a)
y
U2
U1
L1
D1
L2
D2
R1
R2
x
Fig. 2: Schematic representation of the scattering model. Panel (a): assignment of the wave amplitudes on the
different parts of the system. Panel (b): junction scattering amplitudes.
We assume that the electrons can be represented by plane waves traveling along the
ikl
ikl
A e
A e
where l is the electron path length (on the ring l R
,
ring with the form
2
1
where is the angle traversed by the electron, and R – the ring radius) and 1,2A are the
amplitudes of the respective waves (In Fig. 2a these amplitudes are denoted L, U, D and R in
different segments of the ring and the leads). We use the standard notation where
negative(positive) k values represent (counter-)clockwise propagating waves. The ring-lead
coupling is modeled by assigning scattering amplitudes at the ring-leads junctions40-46 as
2c
is the probability of an electron approaching the junction from the lead
shown in Fig. 2b.
to be back scattered into the lead, is the probability of an electron approaching the junction
2a is the probability of an electron approaching the junction
from the lead to mount the ring,
from one of the arms of the ring to be back scattered into the same arm, and
2b is the
probability of an electron approaching the junction from one of the arms of the ring to be
transmitted into the other arm. Based on current conservation considerations the scattering
matrix can be shown to be unitary such that all scattering amplitudes (taken to be real42, 47, 48)
can be folded into a single parameter which we choose to be such that:
1
1
2
2
1 2
(17)
c
1
1
c
;
b
;
a
c
9
It is now possible (Appendix A) to write scattering equations for both junctions taking into
account the spatial and magnetic phases accumulated by the electrons while traveling along
the arms of the ring. Focusing on the scattering process associated with an incident wave
coming on the right lead with amplitude R1, that is, taking the incoming amplitude on the left
lead to vanish, L1=0, these equations can be used to relate all amplitudes in the ring segment
and the leads to the incoming amplitude R1. This leads (see Appendix A) to the transmission
probability in the form
2
(18a)
k
, B
L
2
R
1
1
2
1
2
4
kR
1 cos 2
cos 2
kR
2 sin
kR
2
sin
kR
B
cos 2
0
(18b)
2
2
c
2
1
kR
4 cos 2
2
a
cos 2
kR
2
b
C
2
kR
cos 2
2
a
cos 2
kR
2
b
B
cos 2
0
B
cos 2
0
(18c)
where
S
S
B S B S
B
z
, S
is a vector perpendicular to the ring's surface such that
2
/ e
R
. We note that when the above expression
and, as above, 0
2
reduces to the standard expression for symmetrically connected rings.49
(c) A two State Model
In the weak leads-ring coupling limit, the width of the doubly-degenerate energy
levels on the ring is considerably smaller than the inter-level spacing between states of
different angular momentum. Therefore, at low bias voltages, we can safely assume that
electronic transport takes place mainly through a couple of degenerate levels close to the
Fermi energy of the leads and model the transport physics using the simplified two-level
model shown in Fig. 3. To assign the relevant model parameters, consider an external
zB
threading a molecular ring of radius R that lies in the XY plane.
magnetic field
B
,0,0
The energy levels of an electron moving otherwise freely on the ring are given by (see
Appendix B):
10
2
2
2
1
R
mE
B
m
0
,2,1,0
is the angular
where we use atomic units unless otherwise stated. Here,
m
quantum number (for the isolated ring, the quantum number m relates to the wave vector k
of the previous section via
) and the flux quantum is
. In the basis of the
2
kR
m
0
corresponding eigenstates of the isolated ring, the molecular ring Hamiltonian MH is given
m
)
(
MH , that correspond to states whose
by a repeated sequence of diagonal 2x2 blocks,
(19)
degeneracy is split by the field:
)
2
2
2
2
0
m
H
m
(
M
1
R
B
0
m B
z
2
The full transport problem of a molecular ring connecting between two metal leads can thus
be replaced by the simplified model involving only the two levels characterized by a given
,j KV
K L R
j
m , shown in Fig. 3. Here
,
1, 2 ;
denotes the coupling between molecular
;
m B
z
2
. (20)
B
0
0
E
2
E
1
0
1
R
m
2
0
2
2
2
level j and the lead K, and
E
1/ 2
1
R
2
2
2
m
B
0
2
m B
z
2
V2L
E2
V2R
(21)
V1L
V1R
E1
Figure 3: Schematic representation of the two-level model. The leads are represented in this figure by
tight binding chains.
transmission coefficient
The corresponding
a
r
E G E
E G E
M
M
where the broadening function of lead K (=L,R) is given by
a
r
K
K
the Landauer
is given by
formula
i
(23a)
(22)
Tr
E
E
E
E
K
R
L
11
the retarded Greens function of the molecule is calculated as
1
†
E
a
r
G E
G E
M
M
And the self-energy of lead K is represented as
EI H
E
r
R
r
L
M
(23b)
†
2
K
K
kk
r
K
a
K
E
E
(23c)
r
0
G E
K
V
K
1,
*
V V
K
2,
1,
*
V V
K
K
1,
2,
2
V
2,
0r
KG E being the retarded Green's function of the isolated lead K. Eq. (23c) is written under
the assumption of short range interaction between ring and lead, whereby the ring is coupled
to the nearest neighbor lead site denoted by the index k. We could have used here the explicit
Newns-Anderson model for a 1-dimensional tight binding lead for which is given by Eqs.
(9), however, because we will be using the 2-level model as a generic simple model to gain
physical insight into the nature of our results it is enough to make the simplest wide-band
r
r
0
0
G E
G E
R
L
kk
kk
electronic states and we assume identical leads. On the other hand, the magnetic field
dependent transport properties are determined by the choice of lead-ring coupling elements
V
that enter Eq. (23c). Aiming to capture this dependence, we assume that
lead
ring
where ρ is the density of lead
i
approximation for which
im
Ve
reflects the phase of the wave function on the ring at the positions of the leads-ring junction.
Referring to Fig. 2a and setting the angle at which the right lead is attached to the ring to be
0 , the left lead is attached at the respective angle γ (γ is π, 2π/3 and π/3 for the para,
0
meta and ortho configurations, respectively). Hence we take
im
im
im
Ve
Ve
V V
Ve
V
V V
V
;
;
;
0
0
R
R
L
L
1,
2,
1,
2,
where V is the coupling strength. Consequently, Eq. (23c) yields the retarded self-energies
associated with the right and left leads in the forms
2 1 1
1 1
where m is related to the imposed magnetic field and to the electron energy through Eq.(21).
/L R E
It is now possible to obtain explicit expressions for the broadening matrices
and
EGEG
the retarded and advanced molecular Green's functions
from which the
r
a
,
M
M
transmission probability can be calculated using Eq. (22). A long but straightforward
calculation (see Appendix B for a detailed derivation) leads to
1
im
2
i V
i V
r
R E
(25)
(24)
;
im
E
r
L
1
e
e
2
2
12
zE B
,
1
2
1
2
E E
1
2
2
E E
1
E E
2
cos 2
m
E E
2
2
(26a)
(26b)
2
2
E E
1
2
E E
1
E E
2
2
2
2
E E
1
E E
2
2
cos
m
E E
2
2
sin
m
4
(26c)
2
2 V
where the dependence on
3. Results and discussion
zB originates from Eq.(21).
(26d)
As discussed above, current conduction through ring structures is inherently
associated with interfering transmission pathways50 that may be conveniently described in
terms of degenerate eigenstates of the isolated ring. The corresponding degenerate states can
be represented in terms of rotating, clockwise and counter-clockwise, Bloch states on the
ring. Indeed, it is the tuning of relative phases of these states by magnetic field that
potentially provides magnetic field control of the ring transmission properties. This implies
several important aspects of the resulting behavior: First, transport will be affected by
interference (and consequently most amenable to magnetic field control) in energy regimes
dominated by such degenerate states. Second, strong interference effects and large sensitivity
to magnetic field are expected when these states are associated with sharp transmission
resonances, i.e., for sufficiently weak metal-molecule coupling. Third, the symmetry of a
given junction geometry strongly affects the interference pattern and hence dictates the
transport properties. Fourth, these phenomena will be strongly affected by dephasing
processes. In what follows we will see different manifestations of these statements.
We study single-molecule junctions consisting of molecular ring structures such as
benzene, biphenyl and anthracene connecting metal leads. The results presented below focus
on the response of these systems to an externally applied static uniform magnetic field in
terms of modification in their electronic transport characteristics. The molecular junction is
emulated by the tight-binding (Hückel) molecular Hamiltonian and 1-dimensional tight
binding leads as presented above. For the latter we take zero on-site energies, i.e.,
K K L R
eV6
(
, )
0
and nearest neighbor coupling
that corresponds to a
L
R
metallic band of width 24 eV. The zero bias Fermi energies of these contacts are set to
13
M
eV5.2
eV5.1
and
for all
α M
0FE
. For the molecular structure we take
nearest-neighbor atom pairs. 51
Consider first a simple benzene ring that can couple to the metal leads in para, meta
and ortho configurations (Fig. 1). In the free molecule the highest occupied molecular orbitals
(HOMOs) and the lowest unoccupied molecular orbitals (LUMOs) constitute pairs of doubly
degenerate orbitals which, with our choice of molecular parameters and energy origin, are
eV
eV
4
positioned at
, respectively. Upon connecting to the
and
1
M
M
M
M
metal leads these levels get broadened and, more importantly, their degeneracy split. For
sufficiently weak metal-molecule coupling these split levels constitute sharp transmission
resonances at the corresponding energies.
It should be emphasized that degeneracy splitting in benzene affected by imposing
perturbations at some atomic positions does not by itself specify the nature of the new
eigenstates. An important property of the resonances obtained when the ring is connected to
infinite leads at the meta or ortho positions (i.e. scattering resonances characterized by
scattering boundary conditions, that is, incoming in one lead and outgoing in the other(s)), is
that they can be shown to maintain the character of circulating Bloch eigenstates of the
isolated ring. The corresponding transmission resonances are therefore associated with
considerable circular current in the benzene ring.7 Consequently, in the meta and ortho-
connected configurations, large circular currents are found when bias and gate potentials are
such that one of the split resonances dominates. In contrast, in the para connected ring, one of
the split eigenstates turns out to have a node at one of the para positions and, consequently,
does not contribute to transmission, while the other is characterized by zero net circular
current as could be expected from symmetry.
This is shown in the upper panel of Fig. 4, where the bias voltage is set to V = 2 V.
This brings the upper Fermi energy to the vicinity of the LUMO pair: In the meta and para
connected benzenes one of the split resonances is below and the other above this energy.52
The metal-molecule coupling is taken βLM = βRM = 0.05 eV, low enough so these resonances
remain well separated. For these parameters the net current through the junction is of order ~
nA, while the circular current in both the meta and ortho configurations is three orders of
magnitudes larger, yielding 0.23 Tesla for the induced magnetic field in the ring center in
both cases. Note that the direction of the circular current and the ensuing magnetic field is
opposite in the meta and ortho configurations. See Ref. 7 for more details.
14
Fig. 4. Internal current distribution in (a) para (b) meta and (c) ortho-connected benzene ring,
eV under voltage bias of V 2 V. The upper panel shows the
0.05
KM
connected to leads with
bond currents calculated in the absence of an external magnetic field, while the lower panel
corresponds to the presence of a magnetic field, B = -2T (negative B corresponds to a field pointing
down into the plane). The arrows along bonds represent bond currents with magnitudes proportional
to the corresponding arrows lengths. The encircled dot (cross) in the meta (ortho) structures in the
upper panel denote the directions of the magnetic field induced by the circular current: out of (into)
the molecular plane.
When an external magnetic field is switched on, the bond-current map changes. In
these and the following calculations the external magnetic field is taken in the Z direction,
perpendicular to the molecular XY (also page) plane. Positive field direction is taken to be
outwards, towards the reader and a positive circular current is taken to be in the
counterclockwise direction. This field generates an additional circular, so called persistent,
current that can reinforce or suppress the voltage driven circular current. Thus, a negative
magnetic field (direction into the paper plane) generates a current in the anticlockwise
V
2 V
direction that adds to the circular current in the meta connected ring (at
) and subtract
from it in the ortho-connected structure, as seen in the lower panels of Fig. 4. Of course, the
interplay between the voltage driven and field induced circular current depends on the
voltage range considered. For example, in the meta-connected ring the voltage driven circular
V
2 V
current reverses its direction above
and a negative field induced persistent current
will add to it destructively as in the ortho case. This implies that at any finite bias
I B
I
B
(
)
(
)
c
.
c
15
Fig. 5. Circular current as a function of bias voltage in the range (1.994 to 2.006 Volt) in a
in the presence of external magnetic field, B = 0, +/- 1T
meta-connected benzene for
eV05.0
KM
and +/- 5T. The inset depicts the case for
for applied field B = 0, +/- 100 T.
eV5.0
KM
Fig. 5 shows another aspect of this effect. Here the circular current in a meta-
eV (K = L, R) is shown as a
0.05, 0.5
connected benzene ring connected to leads with
KM
function of voltage for different applied magnetic fields. Again it is seen that
I B
(
c
c
in the presence of bias voltage. It is also seen (inset) that the sensitivity to magnetic field is
strongly reduced when the molecule-lead coupling becomes stronger.
B
I
(
)
)
16
2V V plotted as function of
Fig. 6. The circular current in a meta-connected benzene ring biased at
magnetic field applied perpendicular to the ring. The three cases shown correspond to different
0.05
0.10
eV, dashed line (red):
eV and
molecule-lead coupling. Full line (black):
KM
KM
eV (in the inset). The magnetic field induced by the voltage driven
indB
KM
current is practically the same in all cases,
dotted line (blue):
0.5
0.23
T.
It is of interest to ask, what is the external magnetic field that will annihilate the
circular current in a voltage driven molecule? One may naively expect that this is just the
field equal in magnitude and opposite in direction to that induced by the circular current so
that the two fields annihilate each other, however Fig. 6 shows that the magnetic field needed
to stop the circular current is considerably larger than the magnetic field produced by that
0.05, 0.1, 0.5
current, and generally depends on the molecule-lead coupling. For
eV we
KM
find this field to be 0.98, 3.92 and 96.40 tesla, respectively, at the voltage bias employed (2
V). On the other hand we find that the magnetic field induced by the circular current,
indB
tesla at the same voltage bias, almost independent of the molecule-lead
0.23
coupling.53 This non-trivial behavior results from the fact that the application of the external
magnetic field does not simply oppose the circular-current induced magnetic field but also
alters the electronic structure of the ring and strongly influences the interference pattern of
coherent electrons mounting the ring thus influencing the resulting induced magnetic field
itself.
17
Fig. 7 The I-V Characteristics of a junction comprising para- (upper panel) and meta- (lower panel)
connected benzene coupled to the leads with coupling element 0.05 eV, evaluated for different
magnetic field strengths B normal to the ring. The results obtained for different magnetic fields for the
para system are essentially indistinguishable from each other. The inset in the upper panel shows a
close-up on the V = 2 V neighborhood that shows the consequence of the split degeneracy in the para-
connected junction. The inset in the lower panel shows the I-V behavior in the meta configuration for
molecule-metal coupling 0.5 eV, which is essentially field independent in the same range of magnetic
field strengths. Results for the ortho-connected molecule are qualitatively similar to those shown for
the meta configuration.
Of more practical implications is the question whether the junction transport
properties can be affected by an externally applied magnetic field. As already mentioned,
E
previous studies1, 2 seem to indicate that while the transmission
may be affected by an
external magnetic field, the integrated transmission that yields current-voltage characteristics,
is not sensitive to this field. The main reason for this observation is that at realistic magnetic
18
the
field values the splitting between the degenerate levels of the ring is of the order of meVs
(see Fig. 9). At high leads-ring coupling this splitting is much smaller than the width of the
E
curves. At the low coupling limit,
two levels and is therefore hardly seen even in the
E
curve clearly shows the magnetic field induced level splitting but in order to
observe the magnetic field effect in the I(V) curves, the Fermi integration window (see Eq.
(16)) should include only one of the split levels. This, however, requires bias and gate voltage
precision smaller than the level splitting, as well as very low temperatures.
One may conclude that despite the ability to control the magnetic field sensitivity of
the transmission probability through molecular rings via the leads-ring coupling,5, 6 practical
measurements of the I(V) curves will hardly show any magnetic-field effect. This can be
clearly seen in the upper panel of Fig. 7 where the current-voltage relationship of a
symmetrically (para-) connected benzene ring is found to be robust against the external field.
Only when zooming into the current step region (inset of the upper panel of Fig. 7) one finds
a small shoulder resulting from the level splitting at a finite magnetic field value.
While this conclusion is true for the symmetric junction, in the asymmetrically
connected junction a different behavior is observed. In the lower panel of Fig. 7 we present
the I(V) curves of the meta-connected ring for different magnetic field intensities. Despite the
fact that the level splitting is similar to that of the symmetric junction, the current-voltage
characteristics show pronounced sensitivity towards the magnetic field.
19
around E=1eV through a junction comprising para- (upper
Fig. 8 Transmission probability
E
panel) and meta- (lower panel) connected benzene coupled to the leads with coupling matrix element
0.05 eV, evaluated for different magnetic field strengths B normal to the plane of the ring. Again,
results for the ortho-connected molecule are qualitatively similar to those shown for the meta
configuration.
To get further insight into the origin of this behavior, we show in Fig. 8 the
( E
)
transmission functions
that constitute the input to the I-V results of the preceding
figure. Shown are the transmission functions for para- (upper panel) and meta- (lower panel)
connected benzene rings under different perpendicular magnetic fields in the vicinity of the
eV
doubly degenerate LUMO energy of the isolated molecule,
1
. We see that the
M
M
transmission function depends on the magnetic field in both the symmetric and the
asymmetric junctions. Consider first the para connected junction and denote the split states in
this configurations by
2 . As noted above, only one of these, say
1 and
1 , contributes to
the transmission and the system is characterized by a single transmission resonance. In terms
of the two counter-rotating Bloch states that are eigenfunctions of the isolated ring, this
resonance is a linear superposition in which the corresponding paths add constructively. The
20
the eigenstates become (as B0)
, implying that (a) the single transmission
2 of zero transmission corresponds to the superposition in which they interfere
other state
destructively to give a node in one of the para positions. In the presence of an applied field B
1/ 2
2
2
1
0B splits into two peaks of equal intensities, and (b) the total area under the
peak at
transmission function remains unchanged. This leads to an I-V characteristics that does not
depend on the magnetic field (Fig. 7a) except in the very narrow voltage region where the
Fermi step goes through the split peak (Fig. 7a inset). As discussed above, such a sharp Fermi
step requires very low temperatures (~1 K) to be resolved.
In contrast, in the meta- and ortho- connected junctions, the asymmetric coupling to
the leads results in the appearance of two transmission peaks to appear already in the absence
of external magnetic field. As B is increased, this splitting reduces up to a certain magnetic
field intensity (for instance, +/-2 tesla in the meta-configuration for 0.05 eV molecule-lead
coupling) where it vanishes (level crossing) engendering constructive interference at this field
value. This can be understood as phase adjustment of the interfering electron waves by field,
causing them to interfere constructively until full resonant transmission is reached.
Interestingly, in this regime of magnetic field strength not only the splitting but also the area
under the transmission function is field dependent. As the field intensity increases from zero
the total area under the peaks increases until the peaks become fully separated and then the
area remains constant. This is clearly manifested in the field dependence of the current-
voltage characteristic shown in Fig. 7b, suggesting that in the asymmetric case the I-V field
dependence should be experimentally accessible in the low leads-ring coupling regime. Note
that Fig. 7b shows results obtained at 0K, however the results obtained at 300K are almost
indistinguishable.
A more general view of this behavior is seen in Fig. 9, which shows, for the para- and
junctions,
meta- connected
levels at
the benzene energy
the evolution of
E
eV
1
as a function of molecule-leads coupling (left side of figures) and
M
M
magnetic field (right) as expressed by the transmission function. It is seen that level
degeneracy is lifted by the molecule lead coupling in the meta structure, but not in the para
structure. Increasing the magnetic field for a given (0.05 eV) molecule-lead coupling splits
the levels in the para case, but brings them together first in the meta case, as discussed above.
21
E
plane at B = 0 (left of the vertical
K L R
,
Fig. 9. Transmission probability maps in the
KM
dashed line) and in the E B plane for
0.05 eV
KM
junctions comprising para- (upper panel) and meta-connected (lower panel) benzene molecules. Color
) to red (
).
code varies from deep blue (
1
0
(right of the vertical dashed line) for
Two additional observations should be pointed out. First, another regime of field
dependence takes place at very high fields, where shift of energy levels makes more levels to
appear within the Fermi window between μL and μR. This happened at unrealistically large
fields
( Ec
~ 1000T . Second, in contrast to the circular transmission coefficient
, the
)
BI
BI
( E
(
)
)
)
(
total transmission coefficient
is not affected by the field direction,
.
Qualitatively similar results as described above are obtained for other ring-containing
molecular systems. For example, the isolated biphenyl molecule, which comprises two
coupled benzene rings, possesses two 2-fold degenerate orbitals, viz., HOMO-1 and
eV
and
4
LUMO+1 that for our choice of parameters are positioned at
M
M
, respectively. A biphenyl molecule connected to leads at positions 6,10 (see
M
M
Fig. 10) can be considered as two coupled benzene rings in para configuration, and
consequently we expect that its I-V characteristic is insensitive to an imposed weak magnetic
field. Indeed, a recent work54 finds that to affect transport in this configuration by magnetic
0.5 which, as discussed, is unrealistic for such a small
field requires flux of order
0
molecular structure. On the other hand, the diagonally connected biphenyl shown in Fig. 10a
eV
1
22
can be considered as two coupled benzene rings, each in meta configuration. For such a
structure weakly coupled to leads, we find again high sensitivity of the transmission (Fig.
10b) and the I-V curve (Fig. 10c) to the magnetic field. It should be noted that sensitivity to
magnetic field is manifested when the molecular levels at 1eV (degenerate in the free
molecule) enter the Fermi window at voltage bias 2V. The current rise at
and
V52.0V
3.58V is due to resonant transmission through non-degenerate energy levels at ~ 0.26 eV
(LUMO) and 1.79 eV (LUMO+2), respectively, and is not affected by the field.
Fig. 10. (a) Field free internal current distribution in a diagonally connected biphenyl molecule at a
bias voltage of 2V showing the circular currents in the absence of external magnetic field for metal-
molecule coupling of 0.005 eV. (b) The transmission probability displayed against the electron energy
around 1 eV at different field strengths. (c) Magnetic field effects on the I-V characteristic for B
in
the range 0…15 Tesla.
23
Fig. 11. (a) Field free internal current distribution in a diagonally connected anthracene molecule at a
bias voltage of 2V showing the circular currents in absence of external magnetic field for metal-
molecule coupling of 0.005 eV. (b) The transmission probability displayed against the electron energy
around 1 eV at different magnetic field strengths. (c) Magnetic field effects on the I-V characteristic
for
Tesla.
B
20
Similar results for a junction with diagonally connected anthracene bridge are shown
in Fig. 11. In the voltage range shown, sensitivity to a weak magnetic field is associated with
eV
(LUMO+1) and
1
levels at
the doubly degenerate anthracene
M
M
2.03
eV
(LUMO+2) (responsible for the current rise at V = 2 and 4.06 eV,
2
M
M
respectively). The other current steps seen in Fig. 11c are due to non-degenerate levels and
are not sensitive to the field. As in the previous cases discussed, this behavior depends on the
symmetry of the molecular junction. For example, in agreement with Ref. 55, no sensitivity of
the I-V characteristic to weak fields is found for contacts placed in the (2,6) positions (see
Fig. 11a) although the transmission function itself does depend on the field in a way
reminiscent to the para-connected benzene junction.
Finally, we note that naphthalene does not have orbital degeneracy and indeed no I-V
sensitivity to weak magnetic field is found (although circular currents are induced) in
junction models based on this structure. Conduction through this molecule is found to be
affected only by unrealistic strong fields of order ~ 1000 tesla. These observations can be
summarized by stating that sensitivity of the I-V behavior to relatively weak external
magnetic fields is a generic phenomenon in many ring molecular structures characterized by
24
weak molecule-lead coupling, however its manifestation depends on details of the electronic
structure of the molecule and on the junction geometry.
) for (a)
0.0005
4
.
0/
~ 10
B
in a continuum model (
Fig. 12. Transmission probability around
1kR
2 / 3
(meta) at very small fractions of the flux quantum
(para) and (b)
It is interesting to compare the results shown above for the field affected electronic
transmission through molecular structures to the equivalent transmission problem in the
continuum ring model described in Section 2b. Fig. 12 depicts the transmission probability as
function of the dimensionless parameter kR calculated from Eq. (18), using the reflection
0/B of the order of 10-4. The cases
parameter
at different flux ratios,
0.0005
2 / 3
and
correspond to the para and meta connected rings, respectively. Estimating the
kR correspond to a free electron energy of
benzene ring radius as R~0.13 nm, we find that
1
4
0/
B
of the results displayed in Fig. 12 and those of Fig. 8 is obvious, showing that the complex
corresponds to B of order 10 tesla. The close similarity
the order ~ 2eV, while
10
25
nature of the magnetic field dependent transmission probability through junctions involving
rings of various geometries is intimately related to the symmetry of the wavefunctions
obtained by a simple model of a particle on a ring.
This further justifies the use of the simplified two-level model introduced in Section
2c which relates the generic nature of the magnetic field dependence described above to the
phase dependent coupling coefficients and magnetically controlled wave interferences on the
ring. In Fig. 13, we plot the transmission probability as function of energy obtained by the
two-level model expression (Eq. (26)) for two system geometries under various magnetic
field intensities.
0
0
180
120
Fig. 13. Transmission probability as a function of energy obtained using the two-level model, Eq. (26
), for meta (left panel) and para (right panel) connected rings. We use m=2, ring's radius= 1.0 nm,
V=0.1 eV, =0.05 eV-1 and let the x-axis origin follow the average position of the two levels in the
presence of the magnetic field. The ortho-connected ring results are identical to those obtained for the
meta configuration.
As can be seen, the two-level model fully captures all the features appearing in the
transmission probability curves obtained by both the tight-binding Hamiltonian and the
continuum scattering description. Here, as well, for the symmetrically connected ring the
magnetic field serves to split the energy levels while conserving the total area under the
transmission peaks, whereas for the para and ortho configurations the integrated transmission
probability grows with the magnetic field. This equivalence between the three approaches
(tight binding Hamiltonian, scattering model, and two-level model) sheds light on the origin
of the different behavior of the transmission probability between the three system geometries.
26
As suggested by the two-level model, the differences between the three geometries enter via
the coupling integrals between the ring and the leads taken to be proportional to the phase of
the wave function at the locations of the junctions. Coupling of one of the leads to a nodal
point of the wave function will cause destructive interferences which may be lifted by the
application of the external magnetic field. Since different geometries couple the leads with
different phases the response of the transmission probability towards the magnetic field is
altered.
4. Effect of dephasing
Since much of the effects discussed above result from interference between
transmission pathways, it is expected that dephasing processes will have a strong effect on
these observations. Such effects were studied by several authors in this context using the
Büttiker probe method56 whose application predominates the field of junction transport.
Because this phenomenological method is based on a rather artificial process of replacing
coherently transmitted electrons by electrons with indeterminate phase, we chose to compare
such results with those obtained from another phenomenological model in which the
dynamics of the density matrix of the molecular bridge incorporates damping of non-diagonal
elements as done in the Bloch or Redfield equations describing relaxation in a multilevel
system.
In both the Büttiker probe and the density matrix approaches it is possible to affect
dephasing locally, i.e. at any given site of the tight-binding bridge that represents our
molecule, using the following procedures:
In the Büttiker probe method56, 57 the dephasing rate at such a site, j, is determined by
its coupling to an external thermal electron reservoir, J, with chemical potential set such that
no net current flows through the corresponding contact. We describe the probe by the same
tight-binding metal model, Eq. (2), and the same energetic parameters (site energy and
intersite coupling) as our source and drain leads. The dephasing rate is determined by the
,j J between molecular site j and the site of the probe J that is coupled to it. In the
coupling
calculations reported below we take all these coupling parameters between molecular sites
, for all j and J. Within the model, one calculates the
and probes to be the same,
,j J
MB
K K E
'
,
probes) and obtains the effective transmission function between source and drain in the form
between any two leads (
transmission functions
for N
1, ...
N
L R J
,
,
K K
,
'
27
eff
RL
RL
N
J J
,
' 1
RJ
W
JJ
'
J L
'
, where
W
1
JJ
'
JJ
'
1
JJ
'
1
JJ
JJ
'
(δ is
the Kronecker delta function) and
R
JJ
1
K R L J
,
,
'
J
JK
is the reflection function in
,
m
.
n
(
E
)
(
E
)
(1
(27)
nm
]
nm
n and
where
)
nm
nm
probe J.
In the density matrix description36, 37 one looks, for a given injection current in the
source wire, for the steady state solution of the Liouville equation for the density matrix of
the inner system
i H
1
1
[
nm
2
2
n is the self-energy, Eq. (9), representing the effect of an infinite lead coupled to site
, where nM is 1 if site n is on the molecule and is zero
(1 / 2)
nm
mM
nM
otherwise. Here, the parameter η (taken to be the same for all ring sites) represents the
dephasing rate. The resulting steady state solution is then used to evaluate the current on any
bond segment as well as the transmission coefficient.36, 37
Figures 14 compares results from these calculations in the absence of a magnetic
field. Here dephasing is affected on all sites of the molecular (benzene) ring and the
transmission coefficient is plotted against electron energy for the para, meta and ortho
connected benzene molecules for different values of the dephasing parameters. We note in
passing that our calculations using the Büttiker probe method are practically identical to those
obtained by Dey et al.58 when the same junction parameters are used. On this level of
presentation the main effect of dephasing is seen to be broadening of the transmission peaks.
We note that the two different phenomenological models of dephasing give qualitatively
similar results.
28
Fig. 14. Transmission probability as a function of energy in the presence of dephasing: Top, middle
and bottom figures correspond to para-, meta- and ortho-connected benzene molecules. Left: Results
obtained using the Büttiker probe model with the indicated coupling parameter BM . Right: results
obtained by the density-matrix calculation with the indicated dephasing rate η. The molecule-leads
coupling is 1 eV. The other model parameters are as given in the second paragraph of Section 3
(parameters of the probe leads are the same as for the source and drain leads).
Figures 15 (using the Büttiker probe method) and 16 (density matrix model) focus on
1E eV. The broadening effect caused by dephasing can be
the transmission resonance near
clearly seen both in the strong (upper panels) and weak (middle panels) leads-ring coupling
regimes. In addition the effect of dephasing on eliminating interference characteristics is
apparent. This is most pronouncedly manifested in the integrated transmission (lower panels).
For low bias and temperature, broadening alone makes the integral smaller at any finite E
29
because part of the integrand exits the narrow integration window. Furthermore, in the para
connected molecule, the integrated transmission goes down also because of the destruction of
constructive interference. Conversely, in the meta configuration it goes up (Fig. 15) or
considerably more weakly down (Fig. 16) because the destructive interference is eliminated.
Fig. 15. Dependence of the transmission resonance at 1 eV on dephasing calculated with the Büttiker
probe method. The line style and color representing different values of BM and given in the framed
inset in panel 1a correspond to all panels. Panels 1a,b,c show results for para-connected benzene
while panels 2a,b,c correspond to the meta-connected molecule. In the a and b panels the molecule-
K L R
1
,
KM eV and 0.05 eV, respectively (
source/drain couplings are
). In the weak molecule-
0
BM (no dephasing) lines are scaled down by a
source/drain coupling case (panels 1b, 2b) the
factor of 100 (i.e. multiplied by 1/100) in the para case and by a factor of 2 in the meta case, in order
E
a
to fit on the given scale. The c panels show the integral about the resonance,
for the
dE
E
30
weak coupling (0.05 eV; as in panel s b) case plotted against E, where
the 1eV resonance but well above the lower transmission resonance.
a
e
1 V
is placed well below
Fig. 16. Same as Fig. 15, where the effect of dephasing is obtained from the density matrix approach.
The line style and color representing different values of and given in the framed inset in panel 1a
0 lines are scaled down by the multiplicative factor
correspond to all panels. In the b panels, the
2 10
4 10
2
4
in the para case, and
of
in the meta connected molecule in order to fit into the
4 10
4
, i.e. the peak transmission in
scale used here. Note that the vertical scale itself goes up to
the para-connected molecule without dephasing is 1.
In Figures 7 and 8 above we have demonstrated the possibility of magnetic field
control of the I-V characteristic in the case of meta (and ortho) connected benzene. Figures
17-18 show the effect of dephasing on this dependence. Figures 17a is the analog of Fig. 7b,
31
) meta-connected junction with dephasing implemented by the Büttiker probe
Fig. 17. (a) Magnetic field dependence of the current near the 2V step (associated with the
E
1eV
; analog of Fig. 7b) calculated for a weakly coupled
transmission resonance at
0.05 eV
KM
0.1eV
BM
method (
I
I B
0
0
plotted respectively against the dephasing parameters BM ( Büttiker probe
method) and (density matrix method). The inset in 17c displays the results of the main figure on a
different scale, emphasizing the observation (also seen in 17a) of deviations from B symmetry at
intermediate dephasing rates.
). (b) and (c) The same magnetic field dependence expressed by the ratio
(
I
32
where the I-V characteristic for the meta-connected benzene under different magnetic fields
normal to the ring plane is shown, now in the presence dephasing (Büttiker probe method,
0.1eV
). Similar results are obtained when dephasing is introduced in the density
BM
matrix method. We see that the field dependence of the current step strongly diminishes in
the presence of dephasing. This is shown more explicitly in Figures 17b,c , where the
difference between the current evaluated at V = 2.2 V for
0B and
B
is plotted
15 tesla
against the dephasing parameter.
More insight about the origin of this behavior is obtained from Fig. 18, which is the
analog of Fig. 8 calculated in the presence of dephasing. The primary effect of dephasing in
the range considered is seen to be the destruction of interference effects, which strongly
diminishes the difference between the transmission properties of the para and meta connected
junctions as well as the dependence on an imposed magnetic field.
Fig. 18. Transmission probability for para (1a, b) and meta (2a, b) weakly connected
0.05 eV
KM
(
) benzene as a function of electron energy in the presence of dephasing affected
through Büttiker probes (panels a) (
eV
001.0
BM
) at B = 0, -5 and -15 Tesla.
(
eV1.0
) and density matrix method (panels b)
33
The significance of the dynamic destruction of phase in the quick erasure of the
magnetic field effect on the conduction properties of asymmetrically connected benzene
molecules can be gauged against other effects that can potentially affect this sensitivity. First,
our calculations have disregarded the implications of the voltage distribution across the
molecular junction. On the simplest level of description this can appear in the voltage
division between the two contact, expressed by a factor ξ and a voltage V such that
and
V
V
V
V
are the potential drops on the two molecule-lead contacts
1
while V is the potential drop on the molecule itself. All the calculations described above
0V . We have established that our results are not sensitive
and
where done with
0.5
to the choice of . An example of the effect of V is shown in Fig. 19, which extends the
calculations displayed in Fig. 8b (meta-connected benzene) to the case shown in panel (a)
where some of the site energies are changed,
. We see that the magnetic field
effect on the transmission decreases with increasing and practically disappears for
eV. This emphasizes the need to carry such experiments under low bias
0.05
conditions, implying that need to align the molecular spectrum with respect to the lead Fermi
energy with a gate potential.
34
Fig. 19. The transmission function
for the meta-connected Benzene, same as Fig. 8b,
E
with some site energies shifted as shown in panel (a). In panels (b), (c), (d) is taken 0.01,
0.02 and 0.05 eV, respectively.
Secondly, keeping in mind that the required slow dephasing implies low temperature,
it is important to note that the effect seen in Figs. 17, 18 arises from the dynamic destruction
of phase, and is not reproduced merely by raising the electronic temperature of the leads. This
is seen in Fig. 20, which shows the effect of leads electronic temperature on the observed
magnetic field dependence of the conduction through a meta-connected benzene junction
near the molecular resonance at 1 eV (bias voltage 2 V) in the absence of dephasing. Fig. 20a
is similar to Fig. 7b except that the Fermi distributions in the electrodes were taken at 300K.
Fig. 20b displays the current at V = 2.2 V through this junction, plotted against the electrodes
temperature for B = 0 and 15 tesla. Only weak electrode temperature effect is seen at the
realistic temperature range considered.
Fig. 20. (a) Current vs. bias voltage for a weakly (
0.05 eV
KM
different imposed magnetic fields perpendicular to the molecular plane (same as Fig. 7b) calculated at
T = 300K. (b) The current through the same junction at V = 2.2 V, displayed as a function of
temperature for B = 0 and 15 T.
) meta-connected benzene for
Finally, It is interesting to note that in the presence of dephasing, deviations from
Onsager symmetry under reversal of field direction, B
B , are observed (as seen in Fig.
17). Such deviations were discussed in previous work in different contexts, including
coupling to a thermal environment.59-62 We defer further discussion of this issue to a later
publication.
35
5. Concluding Remarks
In this paper we have addressed the issue of magnetic field effect on electronic
transport in molecular conduction junctions. Observations of the Aharonov-Bohm effect in
mesoscopic conducting loops could suggest that molecular junctions comprising molecular
ring structures as bridges will show similar effects, however the small radius of molecular
rings implies that the field needed to observe the AB periodicity is unrealistically large. Still,
we have found that strong magnetic field effects can be seen under the following conditions:
(a) The molecular resonance associated with its conduction behavior is at least doubly
degenerate, as is often the case in molecular ring structures; (b) the molecule - lead coupling
is weak, implying relatively distinct conduction resonances, (c) asymmetric junction structure
and (d) small dephasing (implying low temperature) so as maintain coherence between
multiple conduction pathways. Interestingly, in weakly connected symmetric junctions (e.g.
para connected benzene) the transmission coefficient can show sensitivity to magnetic field,
however it is found that the integrated transmission is field independent, so that this
sensitivity is not reflected in the current-voltage characteristic.
For the organic structures we have used the within the tight-binding (Hückel) model
modified for the presence of magnetic field using the London approximation. Qualitatively
similar results were obtained from the analog model of a continuous ring, showing that the
qualitative effect studied depends mostly on the strength and symmetry of the molecule-lead
coupling. We have also shown that much of the qualitative behavior of conduction in these
models can be rationalized in terms of a much simpler junction model based on a two-state
molecular bridge.
When the conditions outlined above are satisfied, strong dependence of conduction on
the imposed magnetic field can be found. The effect of dephasing processes on this
observation are studied using two different phenomenological models: the Büttiker probe and
phenomenological coherence damping imposed on the Liouville equation for the molecular
density matrix. Both treatments are approximate: The approximate nature of the density
matrix approach stems from the fact that dephasing was affected by damping non-diagonal
elements of the density matrix in the local site representation while assuming that the
transmission energy remained well defined.36, 37 The Büttiker probe approach is limited to
linear response and cannot be rigorously applied to threshold phenomena in the current-
36
voltage dependence. Still, the fact that these two different approaches gave qualitatively
similar results in all cases studied, provide some assurance about their validity. Both models
show strong suppression of the sensitivity of conduction to the imposed magnetic field.
Next, consider the implications of the conditions outlined above to experimental
considerations. Conditions (a) and (c) can be met by making a proper choice of molecular
bridge and the positions of linker groups. Condition (b) of weak molecule-lead coupling does
not imply weak molecule-lead bonding, only that the resonance states that involve multiple
pathways through the ring (or counter propagating wavefunctions in the ring) are weakly
coupled to the metal electrodes. This can be achieved by connecting molecular ring to leads
via saturated alkane chains.
Condition (d), the requirement for small dephasing, is inherent in all experiments
trying to observe interference phenomena in molecular junctions, and implies the need to
work at relatively low temperatures. The Büttiker-probe procedure is not related directly to a
physical process, so it is hard to assess the experimental implication of the coupling MNV . The
equivalent analysis in terms of the coherence damping rate η does provides an estimate: For
the reasonable molecular parameters chosen in our calculations, Fig. 17c shows that magnetic
field effects are suppressed when this damping rate exceeds ~ 0.001 eV, that is, dephasing
times of the order of 1 ps. Recent observations in different systems63 have shown that
molecular electronic coherence can persist on such timescales even at room temperatures.
This suggests that the magnetic field effects discussed in this paper may be observables.
Finally, we have observed magnetic asymmetry (under reversal of field direction) in
the presence of dephasing. This observation and its repercussions will be discussed
elsewhere.
Acknowledgment
We thank Joe Imry for helpful discussions. The research of A.N. is supported by the Israel
Science Foundation, the Israel-US Binational Science Foundation, the European Science
Council (FP7 /ERC grant no. 226628) and the Israel – Niedersachsen Research Fund. O.H.
acknowledges the support of the Israel Science Foundation under Grant No. 1313/08, the
support of the Center for Nanoscience and Nanotechnology at Tel-Aviv University, and the
Lise Meitner-Minerva Center for Computational Quantum Chemistry. D. R. Acknowledges a
Fellowship received from the Tel Aviv University nanotechnology Center.
37
Appendix A: Scattering model for asymmetric nanoscale junctions containing
molecular rings and magnetic fields.
We consider the setup presented in Fig. 2a, and write the electron wavefunction in each
ikl
ikl
A e
where l denotes a propagation distance, i.e. l R
A e
in
segment of the ring as
1
2
ring segments; is the angle traversed by the electron, and R the radius of the ring. We use
the standard notation where positive k represents counter-clockwise propagating waves and
negative values represent clockwise moving waves. In order to calculate the transmission
probability and the circular current as a function of magnetic field we assign scattering
amplitudes as shown in Fig. 2b and explained in the main text. For simplicity, we assume in
what follows that all scattering amplitudes are real. This assumption implies that no rigid
phase shifts occur upon scattering at the junctions consistent with the tight-binding model
which conserves the continuity of the wave-functions across the junctions.42, 47, 48 Focusing on
junction I (Fig. 2a) we may write the following scattering equation relating the incoming
amplitudes to the outgoing amplitudes:
c
R
2
D
2
U
1
a
b
a
b
Current conservation implies that the scattering amplitude matrix must be unitary, i.e.
2
R
1
D
1
U
2
(A.1)
I
(A.2)
c
a
b
a
b
where I is a
33 unit matrix. This provides three independent equations for the four
scattering amplitudes, leading to
1
1
2
2
Having characterized the contacts we turn back to the circular setup in Fig. 2a. For a given
wavenumber
k we can write a scattering equation similar to Eq. (A.1) for contacts I and II,
taking into account the spatial phase accumulated by the electrons while traveling along the
arms of the ring:
1 2 ;
(A.3)
1
1
a
b
;
c
c
c
38
R
2
D
2
U
1
c
a
b
a
b
R
1
i k R
2
i k R
D e
1
U e
2
(A.4)
2
L
1
i k R
A
i k R
1
2
2
(A.5)
c
L
2
D
1
U
r B
D e
2
U e
1
a
b
a
b
To model the influence of an external magnetic field threading the ring we assume that the
zB
such
magnetic field is homogeneous and perpendicular to the plane of the ring
B
,0,0
that the vector potential may be written as:
x
y
z
z
x
y
B
0 0
z
On the circle defining the ring this becomes
1
A
B R
2 z
The magnetic phase accumulated by an electron traveling along the ring is thus given by:
2
2
A dl
1
1
(A.8)
(A.7)
(A.6)
1
2
y x
,
, 0
d
B R
z
sin
yB
z
,
xB
z
sin
, cos
, 0
, 0
, 0
, cos
sin
, 0
B
z
, cos
m
1
2
2
e
1
2
e
1
2
1
2
B
0
e
. In the presence of such magnetic field, Eqs.
2
,
S
R
, and
zB S
where B
2
0
(A.4) and (A.5) are modified as follows:
R
1
B
0
i k R
D e
1
R
2
D
2
U
1
c
a
b
a
b
i k R
B
0
U e
2
2
L
2
D
1
U
2
c
a
b
a
b
L
1
B
0
i k R
2
D e
2
i k R
B
0
U e
1
(A.9)
(A.10)
39
Focusing on a scattering process with incoming electron coming from the right, we set L1 = 0,
that is, take zero incoming amplitude on the left lead. Eqs. (A.9)-(A.10) then lead to
be
0
2
1
2
2
be
ae
2
B
0
B
0
B
0
B
0
i k R
i k R
i k R
i k R
i k R
0
B
0
Inverting (A.11) yields the wavefunctions amplitudes D and U on the ring segments as a
function of the incoming amplitude R1. In particular, the results for D2 and U1 can be used in
(A.10) to yield L2 and therefore the transmission probability
0
R
1
R
1
0
D
1
D
2
U
1
U
1
B
0
(A.11)
i k R
i k R
i k R
B
0
B
0
ae
be
2
1
0
1
ae
ae
be
0
k
,
B
2
L
2
R
1
2
R
1
D e
2
i k R
B
0
2
i k R
B
0
2
U e
1
(A.12)
which finally results in Eq. (18)
Appendix B: The two-level transport model
Here we construct a two-level transport model that, for weak molecule-lead coupling,
captures the main features observed in the magnetic field dependence of electron
transmission through a molecular ring. The validity of a two-level model stems for the fact
that in this coupling limit only pairs of molecular levels, degenerate in the limit of zero
coupling, are coupled through their mutual interaction with the leads. The Hamiltonian for
system
two-level
the Hamiltonian,
considering
by
obtained
be
can
this
2
for a charged particle moving in a magnetic field. The
P qA
V r
Hamiltonian describing a free (
e ; atomic units are used
1
0V ) electron (
1 / 2
H
q
throughout) moving on a circular ring of radius R lying in the XY plane under a uniform
B
B
magnetic field oriented in the Z direction,
can be written by setting
0, 0,
z
r B
A
(B.1)
y x
,
, 0
1
2
zB
2
This leads to
40
P
A
2
A P P A
2
B
z
8
2
2
2
i
x
y
y
x
B
z
2
H
H
1
2
(B.2)
1
2
2
y
x
where the central term in the last stage may be identified as the angular momentum
component along the Z direction. In circular coordinates with the origin placed at the center
of the ring Eq. (B.2) becomes
2
2
2
R B
B
1
z
z
2
2
8
R
2
in which the last term is an additive constant. The eigenstates of this Hamiltonian can be
written in the form
1
2
with the corresponding energy eigenvalues
2
m
0, 1, 2,
(B.3)
(B.4)
ime
;
i
2
2
mE
B
0
1
R
2
B S
m
2
Here, B
and 0
respectively. Using relation (B.4) the wave functions can be rewritten as
are the magnetic flux threading the ring and the flux quantum,
(B.5)
i
B
0
2
E R
m
e
cw
1
2
Noting that Eq. (B.5) may be written in the form
2
;
ccw
i
e
1
2
2
E R
m
B
0
,
(B.6)
2
2
m
2
,
m
E
1
R
B
0
m B
z
2
the Hamiltonian of the isolated ring in the subspace of these two levels is given by Eq. (20).
When coupled to leads as in Fig. 3, the self-energy terms appearing in Eq. (23c) are given by
12
11
r
0
G
L R
/
r
0
G
L R
/
*
V
L R
1,
/
*
V
2,
0 0
0 0
V
L R
2,
/
0
0
V
L R
1,
/
0
0
r
0
G
L R
/
r
0
G
L R
/
(B.7)
r
L R
/
L R
/
E
E
E
E
E
21
22
*
V
V
L R
2,
1,
/
2
V
1,
L R
/
r
0
G
L R
/
E
11
*
V
2,
V
L R
/
1,
L R
/
V
2,
L R
/
L R
/
2
41
(B.8)
Here,
is the retarded (r) Green's function of the isolated (0) left/right (L/R) lead and
E
G r
0
RL
/
we assume short range interaction between the ring and the leads, whereby the ring is coupled
to
the nearest neighbor
leads
sites. The advanced
self-energy
is given by
†
r
RL
/
The coupling matrix elements
that appear in expression (B.8)
K L R
,
1, 2 ;
a
RL
/
E
E
;
.
j
,j KV
for the self-energy are formally calculated via
V and should therefore be
ring
lead
proportional to the phase of the wave function on the ring. In Eq. (24) we take this phase
dependence into account where the specific symmetry of the system (ortho, meta, or para) is
taken explicitly into account via the angular separation between the leads. Using the coupling
matrix elements given in Eq. (24) we obtain explicit matrix representations for the retarded
(and advanced) self-energies in the forms
r
R E
i V
2 1 1
1 1
;
r
L
E
i V
2
1
im
2
e
2
im
e
1
(B.9)
And
a
E
r
E
†
, i.e.
i V
a
R E
2 1 1
1 1
The broadening matrices Γ, Eq. (23a), and the ring Green's functions, Eq. (23b) are then
obtained in the forms
1
im
2
(B.10)
i V
;
E
a
L
1
e
e
2
2
im
R E
V
2
2 1 1
1 1
;
L
E
V
2
2
1
im
2
e
2
im
e
1
(B.11)
r
G E
M
EI H
m
M
r
L
E
r
R
E
1
2
E E
i V
2
1
im
2
i V e
m
2
cos
where we have used Eq. (20) for the Hamiltonian of the isolated ring. Inverting the matrix in
a
MG E leads to
(B.12) and in the corresponding expression for
m
cos
2
i V
2
2
i V e
2
E E
2
im
1
(B.12)
42
1
i V
2
2
E E
2
i V
2
2
i V
2
im
cos
m
2
im
2
2
V
4
m
cos
2
i V
2
4
2
cos
m
(B.13)
2
i V e
2
E E
1
r
G
M
E
E E
1
And the retarded counterpart is
†
E E
2
2
i V e
2
a
G
M
E
G
r
M
E
E E
1
i V
2
E E
2
2
i V
2
im
cos
E E
2
2
i V e
2
2
im
2
2
V
4
m
cos
2
i V
2
4
2
cos
m
1
i V
2
2
m
2
i V e
2
E E
1
(B.14)
With
the broadening and Green's functions matrix
these explicit expression for
representations, evaluating the transmission coefficient (22) becomes a lengthy but
straightforward calculation leading to the final result (26).
43
References
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
K. Walczak, Cent. Eur. J. Chem 2, 524 (2004).
S. K. Maiti, Chemical Physics 331, 254 (2007).
O. Hod, R. Baer, and E. Rabani, The Journal of Physical Chemistry B 108, 14807
(2004).
O. Hod, R. Baer, and E. Rabani, Journal of the American Chemical Society 127, 1648
(2005).
O. Hod, E. Rabani, and R. Baer, Accounts of Chemical Research 39, 109 (2006).
O. Hod, R. Baer, and E. Rabani, Journal of Physics: Condensed Matter 20, 383201
(2008), and references therein.
D. Rai, O. Hod, and A. Nitzan, Journal of Physical Chemistry C 114, 20583 (2010),
and references therein.
S. Nakanishi and M. Tsukada, Jpn. J. Appl. Phys. 37 (1998) pp. , L1400 (1998).
S. Nakanishi and M. Tsukada, Physical Review Letters 87, 126801 (2001).
M. Ernzerhof, H. Bahmann, F. Goyer, M. Zhuang, and P. Rocheleau, J. Chem. Theory
Comput. 2, 1291 (2006).
N. Tsuji, S. Takajo, and H. Aoki, Phys. Rev. B 75, 153406 (2007).
K. Tagami, M. Tsukada, W. Yasuo, T. Iwasaki, and H. Nishide, Journal of Chemical
Physics 119, 7491 (2003).
B. Wang, R. Chu, J. Wang, and H. Guo, Physical Review B 80, 235430 (2009).
K. Tagami and M. Tsukada, Current Applied Physics 3, 439 (2003).
A. M. Jayannavar and P. Singha Deo, Physical Review B 51, 10175 (1995).
K. Tagami and M. Tsukada, e-Journal of Surface Science and Nanotechnology 2, 205
(2004).
J.-L. Xiao, Y.-L. Huang, and C.-L. Li, Journal of Luminescence 119-120, 513 (2006).
Y.-l. Huang and J.-l. Xiao, Superlattices and Microstructures 41, 17 (2007).
L. G. Wang, Physica B: Condensed Matter 404, 143 (2009).
Note that splitting take place already due to the asymmetric coupling. However,
without magnetic field or externally induced current, the split states do not carry net
angular momenta.
O. Entin-Wohlman, Y. Imry, and A. Aharony, Physical Review Letters 91, 046802
(2003).
O. Entin-Wohlman, Y. Imry, and A. Aharony, Physical Review B 70, 075301 (2004).
I. Barth, J. Manz, Y. Shigeta, and K. Yagi, J. Am. Chem. Soc. 128, 7043 (2006).
I. Barth and J. Manz, Angewandte Chemie-International Edition 45, 2962 (2006).
K. Nobusada and K. Yabana, Phys. Rev. A 75, 032518 (2007).
G. F. Quinteiro and J. Berakdar, Opt. Express 17, 20465 (2009).
A. Matos-Abiague and J. Berakdar, Phys. Rev. Let. 94, 166801 (2005).
44
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
S. S. Gylfadottir, M. Nita, V. Gudmundsson, and A. Manolescu, Physica E: Low-
dimensional Systems and Nanostructures 27, 278 (2005).
A. S. Moskalenko and J. Berakdar, Physical Review B 80, 193407 (2009).
A. S. Moskalenko and et al., EPL (Europhysics Letters) 78, 57001 (2007).
Y. V. Pershin and C. Piermarocchi, Physical Review B 72, 245331 (2005).
E. Räsänen, A. Castro, J. Werschnik, A. Rubio, and E. K. U. Gross, Physical Review
Letters 98, 157404 (2007).
E. Rasanen, A. Castro, J. Werschnik, A. Rubio, and E. K. U. Gross, Physical Review
B (Condensed Matter and Materials Physics) 77, 085324 (2008).
D. Rai, O. Hod, and A. Nitzan, The Journal of Physical Chemistry Letters, 2118
(2011).
O. Hod, R. Baer, and E. Rabani, Phys. Rev. Lett. 97, 266803 (2006).
V. Ben-Moshe, A. Nitzan, S. S. Skourtis, and D. Beratan, J. Phys. Chem. C 114 8005
(2010).
V. Ben-Moshe, D. Rai, A. Nitzan, and S. S. Skourtis, J. Chem. Phys. 133, 054105
(2010).
F. London, J. Phys. Radium 8, 397 (1937).
V. A. Geyler, V. V. Demidov, and V. A. Margulis, Technical Physics 48, 661 (2003).
S. Datta, Electric transport in Mesoscopic Systems (Cambridge University Press,
Cambridge, 1995).
Y. Imry, Introduction to Mesoscopic Physics (Oxford University Press, Oxford,
2008).
M. Buttiker, Y. Imry, and M. Y. Azbel, Physical Review A 30, 1982 (1984).
Y. Gefen, Y. Imry, and M. Y. Azbel, Physical Review Letters 52, 129 (1984).
M. Cahay, S. Bandyopadhyay, and H. L. Grubin, Physical Review B 39, 12989
(1989).
C. Benjamin, S. Bandopadhyay, and A. M. Jayannavar, Solid State Communications
124, 331 (2002).
A. M. Jayannavar and C. Benjamin, Pramana-J. Phys. 59, 385 (2002).
B. Kubala and J. König, Physical Review B 67, 205303 (2003).
I. A. Ryzhkin, Phys. Solid State 41, 1901 (1999).
A. Aharony, O. Entin-Wohlman, B. I. Halperin, and Y. Imry, Physical Review B 66,
115311 (2002).
T. Hansen, G. C. Solomon, D. Q. Andrews, and M. A. Ratner, J Chem Phys 131,
194704 (2009).
the actual parameters vary slightly for the different molecules used in our
calculations. We have checked that these variations do not affect our qualitative
observations.
In the para case, one of the levels actually remains at that energy.
45
This statement holds for the voltage used (2 eV) for which the circular current goes
through a maximum. The dependence of the circular current on the molecule-leads
coupling is more pronounced at other voltages.
S. K. Maiti, Journal of Computational and Theoretical Nanoscience 6, 1561 (2009).
S. Nakanishi, R. Tamura, and M. Tsukada, Jpn. J. Appl. Phys 37, 3805 (1998).
M. Buttiker, Phys. Rev. B 33, 3020 (1986).
J. L. D’Amato and H. M. Pastawski, Phys. Rev. B 41, 7411 (1990).
M. Dey, S. K. Maiti, and S. N. Karmakar, Organic Electronics 12, 1017 (2011).
B. Szafran, M. R. Poniedziałek, and F. M. Peeters, Europhys. Let. 87, 47002 (2009).
D. Sánchez and K. Kang, Physical Review Letters 100, 036806 (2008).
C. A. Marlow, R. P. Taylor, M. Fairbanks, I. Shorubalko, and H. Linke, Physical
Review Letters 96, 116801 (2006).
G. L. J. A. Rikken and P. Wyder, Physical Review Letters 94, 016601 (2005).
A. Ishizaki, T. R. Calhoun, G. S. Schlau-Cohen, and G. R. Fleming, Physical
Chemistry Chemical Physics 12, 7319 (2010).
53
54
55
56
57
58
59
60
61
62
63
46
|
1601.03861 | 1 | 1601 | 2016-01-15T10:13:31 | Decoherence and Decay of Two-level Systems due to Non-equilibrium Quasiparticles | [
"cond-mat.mes-hall",
"cond-mat.supr-con"
] | It is frequently observed that even at very low temperatures the number of quasiparticles in superconducting materials is higher than predicted by standard BCS-theory. These quasiparticles can interact with two-level systems, such as superconducting qubits or two-level systems (TLS) in the amorphous oxide layer of a Josephson junction. This interaction leads to decay and decoherence of the TLS, with specific results, such as the time dependence, depending on the distribution of quasiparticles and the form of the interaction. We study the resulting decay laws for different experimentally relevant protocols. | cond-mat.mes-hall | cond-mat | Decoherence and Decay of Two-level Systems due to Non-equilibrium Quasiparticles
1Institut fur Theoretische Festkorperphysik, Karlsruhe Institute of Technology, D-76128 Karlsruhe, Germany
Sebastian Zanker,1 Michael Marthaler,1 and Gerd Schon1
It is frequently observed that even at very low temperatures the number of quasiparticles in
superconducting materials is higher than predicted by standard BCS-theory. These quasiparticles
can interact with two-level systems, such as superconducting qubits or two-level systems (TLS) in
the amorphous oxide layer of a Josephson junction. This interaction leads to decay and decoherence
of the TLS, with specific results, such as the time dependence, depending on the distribution of
quasiparticles and the form of the interaction. We study the resulting decay laws for different
experimentally relevant protocols.
INTRODUCTION
Superconducting quantum devices have a wide range
of applications. Due to the weak dissipation in the su-
perconducting state they are promising candidates for
building large scale quantum information systems [1, 2].
They are easily controlled and measured by electromag-
netic fields, but for the same reason they couple rather
strongly to the environment and are prone to decoher-
ence [3]. Much effort has been put into understanding
and minimizing various noise sources.
One ubiquitous source of decoherence arises from two
level systems (TLS), such as bistable defects residing in
dielectric substrates, disordered interfaces, surface ox-
ides, or inside the barriers of Josephson junctions [4].
While originally introduced to explain anomalous prop-
erties of glasses at low temperatures [5] there is evidence
that they are also an important source of decoherence
for superconducting qubits [1] or superconducting res-
onators [6]. A bath of TLS can explain the 1/f noise
which limits the performance of many devices [7], while
fluctuations of very slow TLS induce long-time parame-
ter shifts. Still, the microscopic origin of those TLS re-
mains unclear. Some potential sources are small groups
of atoms that tunnel between two stable positions, or
dangling bonds, or hydrogen defects. A better experi-
mental as well as theoretical understanding of those TLS
has been the focus of much recent work [8–12].
Recent experiments demonstrated the coherent control
of TLS, residing inside the amorphous layer of a phase
qubit’s Josephson junction, with help of this qubit [13]. It
was possible to carry out typical coherence experiments
as used in magnetic resonance or other qubit experiments
[14]. The aim of those experiments is a better under-
standing of the microscopic nature of individual TLS as
well as their respective environment responsible for TLS
state fluctuations, with the ultimate goal to reduce their
detrimental effects.
In this paper we analyze the decoherence of charged
TLS residing inside the amorphous layer of a Josephson
junction [4, 15] due to scattering and tunneling of non-
equilibrium quasiparticles in the superconducting leads.
Experiments suggest that even at low temperatures the
number of quasiparticles is large as compared to the pre-
dictions of equilibrium BCS theory [16]. Similar as ob-
served for superconducting qubits [17] or the dynamics
of Andreev bound states [18] the scattering with quasi-
particles provides an intrinsic noise source also for the
TLS. We investigate the TLS decoherence properties due
to the coupling between the TLS and the quasiparticles.
We find characteristic differences for quasiparticles which
scatter back to the same superconducting electrode and
those which tunnel across the junction. The effect of the
latter depends on the phase difference. Our results ap-
ply both for the TLS, which are the main focus of the
present paper, as well as for qubit decoherence [19]. In
fact for the latter the effect of tunneling electrons is more
pronounced.
THE MODEL
We consider the scattering of quasiparticles from a two-
level system located inside the amorphous barrier of an
aluminum oxide Josephson junction. The model Hamil-
tonian reads as
H = HTLS + Hqp + HC,
(1)
where HTLS is the TLS Hamiltonian, Hqp are the free
quasiparticle Hamiltonians of the left and right lead and
HC is the coupling between both subsystems. Since
the microscopic nature of TLS remains unclear, we use
the phenomenological TLS standard model for HTLS of
Ref. [20].
It describes the TLS as an effective charged
particle trapped in a double well potential with asymme-
try between the two potential minima and tunneling
amplitude ∆0,
2
∆0
2
σz +
σx.
HTLS =
2 ETLS σz with ETLS = (cid:112)∆2
In the TLS eigenbasis the Hamiltonian reduces to
HTLS = 1
0 + 2. Electrons
in nearby leads couple to the TLS’ electric dipole mo-
ment and induce an interaction that is well established
in the context oft metallic glasses [21]:
(2)
HC = σz V = σz
†
gkk(cid:48)c
kck(cid:48) + h.c.
.
(3)
(cid:88)
(cid:16)
kk(cid:48)
(cid:17)
6
1
0
2
n
a
J
5
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
1
6
8
3
0
.
1
0
6
1
:
v
i
X
r
a
Here, gkk(cid:48) is the coupling strength between electrons and
the TLS dipole and ck is an electron annihilation opera-
tor with multi-index k = {(cid:126)k, σ, α} that includes electron
momentum (cid:126)k, spin σ, and the index α = l, r of the lead
(left or right), where the electron resides.
In general
we can distinguish two processes: Electrons that tunnel
through the junction (α (cid:54)= α(cid:48)) while interacting with the
TLS and electrons, that scatter back into their original
lead (α = α(cid:48)). Because of the exponentially decaying
electron wave function inside the junction and the local-
ized character of the TLS wave function, the interaction
rapidly decreases for TLS away from the junction edges.
We expect that for most TLS scattering electrons are the
main source of TLS decoherence, while the influence of
tunneling electrons is insignificant. This is quite differ-
ent for the decoherence of a qubit, where only tunneling
electrons couple to the qubit and induce decoherence.
Furthermore, electrons that contribute to TLS decoher-
ence have energies close to the Fermi energy with mo-
mentum (cid:126)k = kF . Hence, we take the direction average
and introduce the direction-averaged coupling constant
αα(cid:48) ≡ (cid:104)g2
kk(cid:48)(cid:105). Since (cid:126)k ≈ kF the averaged coupling con-
g2
stant does not depend on energy.
The free particles in the leads are Bogoliubov quasi-
particles with mixed electron- and hole-like nature and
†
creation operators a
k and Hamiltonian
Hqp =
Their energy is Ek =(cid:112)ξ2
bcs with ξk being the elec-
tron energy in the normal state. Rewriting the coupling
Eq. (3) in terms of quasiparticle operators we find
k + ∆2
V =
gαα(cid:48)
eiϕ/2ukuk(cid:48) − e−iϕ/2vkvk(cid:48)
†
a
kak(cid:48) + h.c.
(cid:16)
(cid:88)
kk(cid:48)
(5)
with coherence factors u2
2 (1 + ξk/Ek). For
tunneling quasiparticles ϕ is the superconducting phase
difference across the junction. The phase difference ϕ
vanishes for scattering quasiparticles.
k = 1 − v2
k = 1
An important quantity in the context of decoherence
is the noise spectral density
SV (ω) =
(cid:104) V (t) V (0)(cid:105)eiωt
(6)
where the average is over the quasiparticle states. With
Eq. (5) we find
SV (ω) =4N 2
0 g2
dEdE(cid:48) ρ(E)ρ(E(cid:48))
∆bcs
1 − ∆2
BCS
EE(cid:48) cos ϕ
× {fα(E)[1 − fα(cid:48)(E(cid:48))]δ(E − E(cid:48) + ω)
+ fα(cid:48)(E(cid:48))[1 − fα(E)]δ(E(cid:48) − E + ω)}
(7)
with the density of states at the Fermi energy of the
normal state N0, the BCS density of states ρ(E) =
2π
(cid:90) dt
αα(cid:48)(cid:82) ∞
×(cid:16)
∆bcs
(cid:82) ∞
(cid:88)
k
†
kak
Eka
(4)
UI (t, t0) = Texp
−i
dt(cid:48) HC,I (t(cid:48))
,
(10)
where UI (t, t0) is the time evolution operator
(cid:20)
(cid:90) t
(cid:21)
2
E/(cid:112)E2 − ∆2
BCS and the quasiparticle distribution func-
†
tion f (Ek) = (cid:104)a
kak(cid:105). We assume that the quasiparticles
can be described with equilibrium BCS gap and density
of states, but with a non-equilibrium distribution func-
tion f (Ek). Due to the square root singularity of the
BCS density of states, the noise spectral density is log-
divergent at low frequencies for tunneling quasiparticles,
e.g. ϕ (cid:54)= 0. Scattering quasiparticles, e.g. ϕ = 0 have a
finite spectral density at low frequencies.
TLS DECOHERENCE
The time evolution of the TLS in the presence of the
quasiparticle reservoirs is best described with the help of
the reduced density matrix
ρ(t) = Tr [(t)]qp ≡
(8)
(cid:18) ρ0 ρ01
(cid:19)
ρ10 ρ1
that is obtained from the full density matrix after tracing
out quasiparticle degrees of freedom. It evolves according
to
ρ(t) = e−iHTLSt Trqp
UI (t)(0)U
†
I (t)
eiHTLSt
(9)
(cid:104)
(cid:105)
t0
and HC,I (t(cid:48)) the coupling in the interaction picture.
It is assumed that the initial density matrix, (t0) ≡
ρ(t0)ρqp(t0), factorizes into a quasiparticle and TLS com-
ponent and that initial correlations are irrelevant on ex-
perimental time scales. We can distinguish two effects
due to the quasiparticles: Decay and decoherence. The
former describes exponential decay of diagonal elements
of the TLS density matrix to their stationary state val-
ues, while the latter concerns the decay of off-diagonal
elements.
Transforming the coupling (3) into the TLS energy
basis we find two contributions σz → /ETLS σz +
∆0/ETLS σx. The off-diagonal term ∼ σx induces transi-
tions and is responsible for the decay rate Γ1. It can be
calculated in first-order perturbation theory [22],
Γ1 =
∆2
0
E2
TLS
[SV (ETLS) + SV (−ETLS)] .
(11)
The diagonal coupling ∼ σz generates pure dephasing,
determined by the low-energy part of the spectral den-
sity. Due to the strong energy dependence in this energy
range pure dephasing does not lead to a simple exponen-
tial decay law. Rather the off-diagonal elements of the
density matrix take the form
ρ10/01(t) = e±iETLSte− 1
2 Γ1te−h(t)
(12)
(cid:17)
(cid:17)
where h(t) describes the deviations from the simple ex-
ponential decay. It reduces to a linear time-dependence
only for flat spectral densities and long times. This form
of the density matrix follows from Eq. (9) and the fact
that the TLS–quasiparticle coupling is diagonal in TLS
space for pure dephasing. Due to the simple coupling we
can pull all TLS operators through the trace and arrive
at the form for the TLS density matrix given in (12) with
(cid:20)
(cid:26)
(cid:90) t
V (t(cid:48))dt(cid:48)(cid:27)
(cid:21)
e−h(t) ≡ Trqp
TC exp
i
ρqp(t0)
.
(13)
t0
The contour time-ordering operator Tc orders along a
contour from t0 to t and back again. To further evaluate
that expression we expand the exponential and introduce
an additional approximation [19]: We assume that we can
split averages over Vi operators in the form
(cid:104)V (t1)V (t2) . . . V (tn)(cid:105) =
(cid:104)V (ti)V (tj)(cid:105)···(cid:104)V (tk)V (tl)(cid:105)
(cid:89)
perm
(14)
With this approximation the quasiparticles behave simi-
lar to a Gaussian noise source [22] and we find
3
NON–EQUILIBRIUM QUASIPARTICLES
Based on the dephasing functions (16) and (15) as well
as the decay rate (11) we are ready to analyze the de-
phasing process due to quasiparticles. The spectral den-
sity (7) depends on the quasiparticle distribution func-
tion. Several experiments provide evidence that, even
at low temperatures where quasiparticles should be ex-
ponentially suppressed with the BCS gap, finite den-
sities of quasiparticles remain, estimated to be nqp ∼
10−6 · ∆BCSN0 [16]. Similar to the treatment of non-
equilibrium quasiparticles for qubit decoherence, e.g. in
Ref. [24], we assume that both, the BCS gap and the
density of states are not changed, but the distribution
function is of a non-equilibrium form. Although the ex-
act form depends on experimental details most of the
non-equilibrium quasiparticles have energies close to the
superconducting gap because of scattering with phonons
and among each other. We therefore assume that the
distribution function has a width δ above the gap, which
for a Fermi distribution is determined by temperature,
δeq ∼ kBT , but here it is treated as a parameter. In the
following we derive analytical forms for the different rates
in the experimental relevant long-time limit t (cid:29) δ−1.
hR(t) = t2
dω Sqp(ω)
sin2 (ωt/2)
(ωt/2)2
(15)
Decay
(cid:90)
(cid:90)
This specific form for pure dephasing is well established
in the context of magnetic resonance or qubit experi-
ments in a Ramsey protocol. The weighting function
g(ωt) = sin2(ωt/2)/(ωt/2)2 has a pronounced peak for
zero energy and decreases rapidly for larger ω. There-
fore, the Ramsey-type experiments are sensitive to the
spectral density at low energies.
Within the Gaussian approximation we can extend our
analysis to more sophisticated measurement protocols,
such as spin echo or more complicated refocusing tech-
niques that suppress low-frequency noise contributions.
The dephasing function h(t) for those protocols looks
very much like the Ramsey function but with different
filter functions depending on the particular pulse proto-
col [23]
h(t) = t2
dω Sqp(ω) g(ωt).
(16)
The relevant energy scale for TLS decay is the TLS
energy splitting ETLS as evident from Eq. (11). The TLS
which can be probed by a qubit have energy splittings
close to that of the qubit and thus fulfill ETLS (cid:29) δ. In
order to evaluate the spectral density in this limit we
introduce the normalized quasiparticle density
(cid:90) ∞
1
∆bcs
∆BCS
xqp =
dE ρ(E)f (E).
(18)
For typical TLS energies ∆BCS (cid:29) ETLS (cid:29) δ we can ap-
ply the ’low-energy’ approximation to evaluate the spec-
tral density at the TLS energy [17, 24]. In this limit all
quasiparticle energies in Eq. (7) can be set to ∆BCS. The
only exception is the quasiparticle energy in the divergent
BCS density of states together with the corresponding
distribution function f (E). They enter in the quasipar-
ticle density (18) and the spectral density, describing the
decay, reads as
E.g. for spin echo, which is the ’first order’ improvement
to the Ramsey experiment, the filter function is
ge(ωt) = sin4 (ωt/4) / (ωt/4)2
(17)
with a maximum slightly shifted to higher frequencies.
For typical experimental times in the range of microsec-
onds the filter function measures the spectral density at
energy equivalents of several MHz.
SV (ETLS) = 4N 2
0 g2
αα(cid:48)∆BCS(xqp,α + xqp,α(cid:48))
× ρ(ETLS + ∆BCS)
1 −
∆BCS
∆BCS + ETLS
cos ϕ
,
(19)
while ∼ S(−ETLS) and the resulting excitation rate is
much smaller. This form for the high-energy spectral
density and thus decay rate Γ1 is well established in the
context of qubit decay due to quasiparticles [16, 25].
(cid:18)
(cid:19)
Ramsey and Spin Echo Dephasing
To calculate the Ramsey dephasing rate (15) we need
an approximation for the low-energy spectral density. We
proceed as in Ref. [19] and split the spectral density into
a regular and a divergent part. For low energies, the
former is flat and can be considered constant, while the
latter is log divergent, Sdiv ∼ (1 − cos ϕ) log(δ/ω). We
find the Ramsey dephasing function
hR(t) = Γ∗
2 t + πN 2
0 g2
αα(cid:48)[fα(∆BCS) + fα(cid:48)(∆BCS)]
×[1 − cos(ϕ)] [γe − 1 + log(4δ · t)] t
(20)
with the Euler constant γe and the pure dephasing rate
Γ∗
2 = 8πN 2
0 g2
αα(cid:48)
[fα(E) + fα(cid:48)(E)]dE .
(21)
(cid:90) ∞
∆BCS
For scattering quasiparticles we have cos ϕ = 1 and the
divergent contribution vanishes. Thus, scattering parti-
cles induce simple exponential dephasing ∼ e−Γ∗
2 t with
rate Γ∗
2. On the other hand, the dephasing effect of tun-
neling quasiparticles is dominated by the second term in
(20) stemming from the divergent contribution.
The spin echo protocol filters out low energies, but
we observe that the relevant energy scales are still much
smaller than the width of the quasiparticles. Thus the
calculation proceeds similar to the calculation for Ram-
sey dephasing, with the result
he(t) = Γ∗
0 g2
2 t + πN 2
×(1 − cos(ϕ))
αα(cid:48)[fα(∆BCS) + fα(cid:48)(∆BCS)]
[γe − 1 + log(δ · t)] t.
(22)
1
2
Since the non-divergent part of the spectral density is
almost flat for the relevant frequency scales, spin echo
does not improve coherence and, similar to white-noise-
induced dephasing, the pure dephasing rate Γ∗
2 is the
same for both protocols, spin echo and Ramsey. Thus,
for scattering electrons there is no measurable difference
between both experimental protocols.aeternus20!0
On the other hand, for tunneling quasiparticles the
second term comes into play and dominates dephasing.
In this limit the ratio between spin echo and Ramsey is
lim
t→∞
he(t)
hr(t)
=
1
2
.
(23)
This improvement in dephasing time due to spin echo is
typical for noise with divergent spectral density at small
energies and could be measured in an experiment.
CONCLUSION
We analyzed the decoherence of TLS located in disor-
dered systems in vicinity to superconducting leads, es-
pecially inside the amorphous layer of a Josephson junc-
tion. We distinguish in our analysis between scattering
4
quasiparticles, that cause decoherence for all the TLS
mentioned above, and quasiparticles that tunnel through
the junction. If there exists a phase difference between
the superconducting electrodes, the latter exhibit a log-
divergent spectral density for low energies leading to in-
creased and time-dependent dephasing rates while the
difference is negligible for the TLS decay. We further
showed that the spin echo technique reduces the TLS de-
coherence rate due to tunneling particles, while it has
little effect for scattering quasiparticles. The results ob-
tained for tunneling quasiparticles, arising form a diver-
gent spectral density, apply to single-junction qubits, and
they are sensitive to refocusing techniques. This opens
possibilities to analyze the quasiparticle-environment of
a qubit.
ACKNOWLEDGMENTS
We thank A. Bilmes, J. Lisenfeld and A. Shnirman for
many useful discussions during the work on this paper.
This work was supported by the German-Israeli Founda-
tion for Scientific Research and Development (GIF).
[1] Barends R., Kelly J., Megrant A., Veitia A., Sank D., Jef-
frey E., White T. C., Mutus J., Fowler A. G., Campbell
B., Chen Y., Chen Z., Chiaro B., Dunsworth A., Neill
C., O’Malley P., Roushan P., Vainsencher A., Wenner J.,
Korotkov A. N., Cleland A. N., and Martinis John M.,
Nature 508, 500 (2014).
[2] M. H. Devoret and R. J. Schoelkopf, Science 339, 1169
(2013).
[3] A. Shnirman, Y. Makhlin, and G. Schon, Physica Scripta
2002, 147 (2002).
[4] R. W. Simmonds, K. M. Lang, D. A. Hite, S. Nam, D. P.
Pappas, and J. M. Martinis, Phys. Rev. Lett. 93, 077003
(2004).
[5] P. Esquinazi, Tunneling Systems in Amorphous and
Crystalline Solids (Springer, 1998).
[6] L. Faoro and L. B. Ioffe, Phys. Rev. Lett. 109, 157005
(2012).
[7] J. Schriefl, Y. Makhlin, A. Shnirman, and G. Schon,
New Journal of Physics 8, 1 (2006).
[8] T. C. DuBois, S. P. Russo, and J. H. Cole, New Journal
of Physics 17, 023017 (2015).
[9] W. A. Phillips, Reports on Progress in Physics 50, 1657
(1987).
[10] A. M. Holder, K. D. Osborn, C. J. Lobb, and C. B.
Musgrave, Phys. Rev. Lett. 111, 065901 (2013).
[11] D. Gunnarsson, J.-M. Pirkkalainen, J. Li, G. S.
Paraoanu, P. Hakonen, M. Sillanp, and M. Prunnila, Su-
perconductor Science and Technology 26, 085010 (2013).
[12] J. M. Martinis, K. B. Cooper, R. McDermott, M. Stef-
fen, M. Ansmann, K. D. Osborn, K. Cicak, S. Oh, D. P.
Pappas, R. W. Simmonds, and C. C. Yu, Phys. Rev.
Lett. 95, 210503 (2005).
5
[13] J. Lisenfeld, C. Muller, J. H. Cole, P. Bushev,
A. Lukashenko, A. Shnirman, and A. V. Ustinov, Phys.
Rev. Lett. 105, 230504 (2010).
[14] J. Lisenfeld, A. Bilmes, S. Matityahu, S. Zanker,
M. Marthaler, G. Weiss, A. Shnirman, M. Schechter, and
A. Ustinov, “Decoherence of individual two-level systems
in dependence of their strain-tuned asymmetry energy,”
(2015), unpublished.
[15] G. J. Grabovskij, T. Peichl, J. Lisenfeld, G. Weiss, and
A. V. Ustinov, Science 338, 232 (2012).
[16] J. M. Martinis, M. Ansmann, and J. Aumentado, Phys.
Rev. Lett. 103, 097002 (2009).
[17] J. Leppakangas and M. Marthaler, Phys. Rev. B 85,
144503 (2012).
[18] D. G. Olivares, A. L. Yeyati, L. Bretheau, i. m. c. O.
and C. Urbina, Phys. Rev. B 89,
Girit, H. Pothier,
104504 (2014).
[19] S. Zanker and M. Marthaler, Phys. Rev. B 91, 174504
(2015).
[20] W. Phillips, Journal of Low Temperature Physics 11, 757
(1973).
[21] J. L. Black and B. L. Gyorffy, Phys. Rev. Lett. 41, 1595
(1978).
[22] G. Ithier, E. Collin, P. Joyez, P. J. Meeson, D. Vion,
D. Esteve, F. Chiarello, A. Shnirman, Y. Makhlin,
J. Schriefl,
and G. Schon, Phys. Rev. B 72, 134519
(2005).
[23] Bylander Jonas, Gustavsson Simon, Yan Fei, Yoshi-
hara Fumiki, Harrabi Khalil, Fitch George, Cory David
G., Nakamura Yasunobu, Tsai Jaw-Shen,
and Oliver
William D., Nat Phys 7, 565 (2011).
[24] G. Catelani, S. E. Nigg, S. M. Girvin, R. J. Schoelkopf,
and L. I. Glazman, Phys. Rev. B 86, 184514 (2012).
[25] G. Catelani, R. J. Schoelkopf, M. H. Devoret, and L. I.
Glazman, Phys. Rev. B 84, 064517 (2011).
|
1205.2029 | 1 | 1205 | 2012-05-09T16:40:11 | Mode bifurcation on the rythmic motion of a micro-droplet under stationary DC electric field | [
"cond-mat.mes-hall",
"physics.bio-ph"
] | Accompanied by the development of microfabrication techniques, such as MEMS and micro-TAS, there has been increasing interests on the methodology to generate a desired motion on a micro object in a solution environment. It is well know that the principle to create an electric motor in a macroscopic scale is not applicable to a micro system because of the enhancement of sticky interaction and higher viscosity in micrometer sized system. On the other hand, living organisms generate various motions under isothermal condition in a well-regulated manner. Despite the past intensive studies, the underlying mechanism of the biological molecular motors has not been unveiled yet. Under such development stage of science and technology at the present, we are performing the study toward real-world modeling on the emergence of regular motion in micro system. In this paper, we report a novel experimental system on the generation of regular movement, such as periodic go-back motion and circular motion, for a micro object under DC electric field. | cond-mat.mes-hall | cond-mat | Mode bifurcation on the rythmic motion of a micro-droplet under stationary DC
electric field
Tomo Kurimura,1, a) Masahiro Takinoue,2 Masatoshi Ichikawa,1 and Kenichi Yoshikawa3
1)Department of Physics, Graduate School of Science, Kyoto University,
Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 Japan
2)Interdisciplinary Graduate School of Science and Engineering,
Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midoriku, Yokohama,
Kanagawa 226-8503, Japan
3)Faculty of Biological and Medical Sciences, Doshisha Univ.1-3 Tataramiyakodani,
Kyotanabe, Kyoto 610-0394, Japan
(Dated: May 2012)
2
1
0
2
y
a
M
9
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
9
2
0
2
.
5
0
2
1
:
v
i
X
r
a
a)Electronic mail: kurimura@chem.scphys.kyoto-u.ac.jp
1
I.
INTRODUCTION
Accompanied by the development of microtechnology, such as MEMS and µTAS, there
is increasing interest on the methodology to realize a desired motion of a micro object in a
solution environment. It is well known that the principle to create an electric motor in a
macro system is not applicable to micro system because of the enhanced sticky interaction
and higher viscosity in micrometer sized system. On the other hand, living organisms
generate various motions on microscopic scale under isothermal condition. Despite the
past intensive studies1,2, the underlying mechanism of the biological molecular motors has
not been fully unveiled yet. Under such development status of science and technology on
micro-motor sat the present, we report a simple motoring system which work smoothly in a
microscpic scale.
Recently, we found that rhythmic motion is generated for an aqueous droplet in an
oil phase under DC voltage on the order of 50 - 100 V. We have already reported some
experiments and models for a w/o droplet under DC electric field.3,4 There are some reports
about experiments of w/o droplets moving under electrical field5,6, bouncing and being
absorbed on a surface between water and oil7, deforming and spliting8,9. Manipulating this
kind of droplet, which is interesting as the model of the cell10 -- 12, the micro-sized reactor,
by optical tweezers13, by micro channel14,15. And manipulating the cells or micro objects by
electrical field has been attempted16, to know manipulating this kind of droplets in detail
will help this in the future. In the present article, we will show that rhythmic motion on
micro-droplet is induced under the DC potential on the order of several volts. We will
also propose a simple mathematical model to reproduce the rhythmic motion and mode
bifurcation.
II. EXPERIMENTAL
A schematic illustration of the experimental setup is given in FIG.1. A water droplet
was suspended in mineral oil on a glass slide, and constant voltage was applied to the
droplet using cone-shaped tungsten electrodes. Droplet motion was observed using an optical
microscope (KEYENCE , Japan).
The w/o droplet was generated using a vortex mixer as follows. We prepared mineral
2
oil including surfactant: 10µm surfactant, dioleylphosphatidylcholine (DOPC) (Japan), was
solved in mineral oil (Nacalai Tesque, Japan) by 90 min sonication at 50 ◦C. 2µl ultrapure
water (Millipore, Japan) was added to 100 µl of the prepared mineral oil, and then agitated
by a vortex mixer for approximately 3 s.
(cid:80)(cid:67)(cid:75)(cid:70)(cid:68)(cid:85)(cid:74)(cid:87)(cid:70)(cid:1)(cid:77)(cid:70)(cid:79)(cid:84)(cid:1)
(cid:80)(cid:71)(cid:1)(cid:78)(cid:74)(cid:68)(cid:83)(cid:80)(cid:84)(cid:68)(cid:80)(cid:81)(cid:70)
(cid:78)(cid:74)(cid:79)(cid:70)(cid:83)(cid:66)(cid:77)(cid:1)(cid:80)(cid:74)(cid:77)
(cid:88)(cid:66)(cid:85)(cid:70)(cid:83)(cid:1)(cid:69)(cid:83)(cid:80)(cid:81)(cid:77)(cid:70)(cid:85)
(cid:55)
(cid:45)
(cid:72)(cid:77)(cid:66)(cid:84)(cid:84)(cid:1)(cid:81)(cid:77)(cid:66)(cid:85)(cid:70)
FIG. 1. Schematic representation of the experimental setup. Mineral oil containing water droplets
was placed on a glass slide and couple of electrodes was situated inside the oil phase. V: Applied
DC voltage. L: distance between the electrodes.
III. RESULTS
FIG.2 exemplifies the motion of a droplet under DC electric field, indecating the occur-
rence of the periodic go-back motion between the electrodes accompanied by the increase
of the electical potential. In the experiments, we observed two following types of behavior:
oscillatory and stationary. These behaviors switch each other depending on the applied volt-
age. When the distance between two electrodes was 213µm [FIG.2(a)], the droplet started
the motion with the applied voltage above 16.3 V. When the distance between two electrodes
was 141µm [FIG.2(b)], the droplet started moving with the applied voltage above 13.7 V.
FIG.3 shows the diagram of the mode of droplet behavior depending on the applied
voltage with the size of the droplet is -- -. When the distance of two electrodes is below
approximately 70µm , droplets are sticked to an electrode (adhered). The diagram indecates
3
that the threshold of applied voltage is roughly propotional to the distance between two
electrodes.
(a) L = 213µm
(b) L = 141µm
V = 16.0V
V = 16.3V
t=0 [s]
0
1
]
s
[
t
2
3
V = 13.0V
V = 13.7V
0
1
2
3
100μm
FIG. 2. Spatio-temporal diagram on the motion of a droplet with the diameter of 34 m at (a)
L=213m, (b) L=141m.@Bifurcation from the stationary state into an oscillatory state is induced
by the increase of the applied voltage.
IV. DISCUSSION
We propose a model to describe the oscillatory-stationary motion of w/o droplets. In
an eqation of motion at a micrometer scale, a viscosity term is more dominant than inertia
term because the Reynolds number, Re, is rather small; Re = ρvd/η ∼ 10−9 ≪ 1, where
ρ(∼ 103kg/m3) and η(∼ 103Pas) are the density and viscosity of the mineral oil, respectively,
and v(∼ 10−4m/s) and d(∼ 10−5m) are the velocity and diameter of the water droplet.
Therefore, an over-damped eqation of motion under the constant electric field, E, is given
4
25
20
]
V
[
V
15
10
5
0
0
Diameter of the droplet
20µm
34µm
50µm
d
Oscillatory
Adhered
2-(b)
2-(a)
Stationary
50
100
150
200
250
L [µm]
FIG. 3. Phase diagram for the mode bifurcation between rhythmic motion and stationary state as
obderved for the droplets with different diameter, where each point represent the threshold value
on the bifurcation. The two arrows are correspond to the mode bifurcation as shown in FIG.2
by
k x = qE + α∇E2
(1)
where k(= 6πηd ∼ 10−7kg/s) is a coefficient of viscosity resistance, and k x represents the
viscosity resistance for a moving droplet with diameter d and velocity x. qE and α∇E2
indicate an electric force and a dielectric force acting on the droplet with charge q and
polarizability α (Il)17.
Here we assume that the time-dependent rate od the charge, q, is described as
q = −βǫx3 −
q
t0
(2)
where β is the proportionality coefficient, and ǫ is the constrant is proportional to the
magnitude of the electrical field. The first term of this means the time-dependence of charge
is in proportion to the number of lines of electric force. The second term means the charge
leak, and t0 is the relaxing time.
We would like to consider the condition where the droplet stays on the same position
between two electrodes. When the electric field can be written as E = (Ex, Ey), The force
on the second term in the right hand of Eq. (1) is caused by the number of the lines of
electric force penetrating the droplet. Comparing with the size of droplet, the change of Ex
5
along x axis can be neglected. By considering the symmetry of the system, we simply adapt
that the change of E2
y along x axis is written as
E2
y = ǫ (cid:0)−(x + 1)2(x − 1)2 + 2(cid:1) .
Then the x component of eq.(1) is given as
k x =
∼=
qEx + α∂xE2
qEx + α∂xE2
y
=qEx − 4αǫx(x + 1)(x − 1)
x = Ex
k q − 4αǫ
k x(x + 1)(x − 1)
(3)
(4)
For simplicity, we introduce the following parameters: Ex/k = a, 4αǫ/k = e and keβ/4α =
γ. Then Eq.(2) and Eq.(4) can be written as
x = − ex(x + 1)(x − 1) + αq
q =
− γex3 − q/t0
(5)
(6)
FIG.4 shows the result of numeric calculation with these equations, where the time and
space scales ,T and X, are arbitrary. The change of the distance between the electorodes
corresponds to the change of the magnitude of the electric field. For example, if L becomes
larger, a and e become smaller. In FIG.4, a and e in (b) are larger than those in (a). The
frequency of the back-and-force motion of the droplet is faster when the electric field between
the electrodes becomes stronger. Thus, our numerical model reproduces the essential aspect
of the rhythmic motion of a droplet under DC voltage.
V. ACKNOWLEDGEMENTS
REFERENCES
1Y. Hiratsuka, M. Miyata, T. Tada, and T. Q. P. Uyeda, Proc. Natl. Acad. Sci. U.S.A. 103,
13618 (2006).
2M. G. L. van den Heuvel and C. Dekker, Science 317, 333 (2007).
3Hase, et al., PRE 74, 046301(2006).
4Takinoue, et al. Appl. Phys. Lett. 96, 104105 (2010)
6
(a)
0
5
10
15
τ
20
25
30
35
40
(b)
0
5
10
15
τ
20
25
30
35
40
-0.8
-0.4
0
X
0.4
0.8
-1 -0.8
-0.4
0.4
0.8 1
0
X
FIG. 4. Numerical results on the Spatio-Temporal diagram with eqs. (5) and (6), the common
parameters are t0 = 0.5 and γ = 0.1. The parameters a and e are changed at T = 15. Initial state
is the same in both graphs; a = 100 and e = 2. After T = 15 in (a), a = 200 and e = 4. In (b),
a = 250 and e = 5.
(a) L = 213µm
(b) L = 141µm
0
1
t
2
3
-1
-0.5
0
0.5
1
-1
-0.5
0
0.5
1
x/L
x/L
FIG. 5. Experimental results on the Spatio-Temporal diagram
7
5T. Mochizuki, Y. Mori, and N. Kaji, AIChE J. 36, 1039 (1990).
6Y. Jung, H. Oh, and I. Kang, J. Colloid Interface Sci. 322, 617 (2008).
7W. D. Ristenpart, J. C. Bird, A. Belmonte, F. Dollar, and H. A. Stone, Nature (London)
461, 377 (2009).
8J. S. Eow, M. Ghadiri, and A. Sharif, Colloids Surf., A 225, 193 (2003).
9S. Teh, R. Lin, L. Hung, and A. Lee, Lab Chip 8, 198 (2008).
10A. V. Pietrini and P. L. Luisi, ChemBioChem 5, 1055 (2004).
11D. S. Tawfik and A. D. Griffiths, Nat. Biotechnol. 16, 652 (1998).
12M. Hase and K. Yoshikawa, J. Chem. Phys. 124, 104903 (2006).
13S. Katsura, A. Yamaguchi, H. Inami, S. Matsuura, K. Hirano, and A. Mizuno, Elec-
trophoresis 22, 289 (2001).
14D. R. Link, E. Grasland-Mongrain, A. Duri, F. Sarrazin, Z. Cheng, G. Cristobal, M.
Marquez, and D. A. Weitz, Angew. Chem. Int. Ed. 45, 2556 (2006).
15J. Atencia and D. J. Beebe, Nature (London) 437, 648 (2005).
16J. Voldman, Annu. Rev. Biomed. Eng. 8, 425 (2006).
17T. B. Jones, Electromechanics of Particles (Cambridge University Press, New York, 1995).
8
|
1811.03229 | 6 | 1811 | 2019-07-02T08:23:13 | Temperature dependence of side-jump spin Hall conductivity | [
"cond-mat.mes-hall"
] | In the conventional paradigm of the spin Hall effect, the side-jump conductivity due to electron-phonon scattering is regarded to be temperature independent. To the contrary, we draw the distinction that, while this side-jump conductivity is temperature independent in the classical equipartition regime where the longitudinal resistivity is linear in temperature, it is temperature dependent below the equipartition regime. The mechanism resulting in this temperature dependence differs from the familiar one of the longitudinal resistivity. In the concrete example of Pt, we show that the change of the spin Hall conductivity with temperature can be as high as 50%. Experimentally accessible high-purity Pt is proposed to be suitable for observing this prominent variation below 80 K. | cond-mat.mes-hall | cond-mat | Temperature dependence of side-jump spin Hall conductivity
Cong Xiao,1, ∗ Yi Liu,2 Zhe Yuan,2, † Shengyuan A. Yang,3 and Qian Niu1
1Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
2The Center for Advanced Quantum Studies and Department of Physics,
Beijing Normal University, 100875 Beijing, China
3Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
In the conventional paradigm of the spin Hall effect, the side-jump conductivity due to electron-
phonon scattering is regarded to be temperature independent. To the contrary, we draw the distinc-
tion that, while this side-jump conductivity is temperature independent in the classical equipartition
regime where the longitudinal resistivity is linear in temperature, it is temperature dependent below
the equipartition regime. The mechanism resulting in this temperature dependence differs from the
familiar one of the longitudinal resistivity. In the concrete example of Pt, we show that the change
of the spin Hall conductivity with temperature can be as high as 50%. Experimentally accessible
high-purity Pt is proposed to be suitable for observing this prominent variation below 80 K.
The spin Hall effect refers to a transverse spin current
in response to an external electric field [1]. In strongly
spin-orbit-coupled electronic systems such as 4d and 5d
transition metals [2 -- 10] and Weyl semimetals [11], the
spin Hall conductivity due solely to the geometry of Bloch
bands, the so-called spin Berry curvature, has attracted
much attention. Besides, there is a scattering induced
mechanism called side-jump, whose contribution to the
spin Hall conductivity turns out to be of zeroth order
of scattering time and independent of the density of a
given type of impurities [1]. Furthermore, the side-jump
spin Hall conductivity arising from the electron-phonon
scattering is conventionally regarded to be temperature
(T ) independent although the phonon density varies with
T [12, 13].
In this work we draw the distinction that, while the
electron-phonon scattering induced side-jump spin Hall
conductivity is T -independent in the classical equipar-
tition regime where the longitudinal resistivity ρ is lin-
ear in T , it is T -dependent at temperatures below the
equipartition regime. This character distinguishes side-
jump from the geometric contribution, and provides a
new mechanism for T -dependent spin Hall conductivi-
ties in high-purity experimental samples. An intuitive
picture is proposed for the T -dependence of the side-
jump conductivity, which differs from ρ that is always
T -dependent. Moreover, our first-principles calculation
demonstrates a prominent T -variation of the spin Hall
conductivity in experimentally accessible high-purity Pt
below 80 K.
We consider strongly spin-orbit coupled multiband sys-
tems. The Fermi energy and the interband-splitting
around the Fermi level are assumed to be much larger
than the room temperature, thus the thermal smearing
of Fermi surface is negligible. Aiming to provide semi-
quantitative and intuitive understanding, the electron-
phonon scattering is approximated by a single-electron
elastic process, which can be called the "quasi-static
approximation". In calculating the resistivity resulting
from phonon scattering, this approximation produces not
only the correct low-T power law (ρ ∼ T 5 for three-
dimensional isotropic single-Fermi-surface systems) [14]
but also the values that are quantitatively comparable
with experimental data [15]. When applied to the side-
jump transport, the high-T and low-T asymptotic be-
haviors are grasped in this approximation. Quantita-
tive deviations appearing in the intermediate tempera-
ture regime are not essential for the present purpose.
The side-jump was originally proposed as the side-way
shift in opposite transverse directions for the carriers with
different spins, when they are scattered by spin-orbit ac-
tive impurities [12, 16]. This picture works well in sys-
tems with weak spin-orbit coupling [17 -- 19], where the
spin-orbit-induced band splitting is smeared by disorder
broadening [1]. Whereas in strongly spin-orbit-coupled
Bloch bands of current interest, the side-jump contribu-
tion arises microscopically from the scattering-induced
band-off-diagonal elements of the out-of-equilibrium den-
sity matrix [20 -- 23]. This corresponds to in the Boltz-
mann transport formalism the dressing of Bloch states
by interband virtual scattering processes involving off-
shell states away from the Fermi surface [24].
Transport
formalism involving off-shell states. -- In
weakly disordered crystals perturbed by an weak external
electric field E, the expectation value of an observable A
(assumed to be a vector without loss of generality) reads
(cid:88)
(cid:104)A(cid:105) =
Alfl
(1)
l
in the Boltzmann transport formalism, where fl is the oc-
cupation function of the carrier state marked by l = (η, k)
with η the band index and k the crystal momentum, Al
is the quantum mechanical average on state l. The car-
rier state is the Bloch state dressed by interband virtual
processes induced by both the electric field and scattering
[24]. In the linear response and weak scattering regime,
these two dressing effects are independent [24]:
Al = A0
l + Abc
l + Asj
l ,
(2)
9
1
0
2
l
u
J
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
6
v
9
2
2
3
0
.
1
1
8
1
:
v
i
X
r
a
where
(cid:17)
(cid:16)
Abc
l
e
EαΩA
αβ (ηk)
=
β
(3)
2
arises from the electric-field induced dressing, with
(cid:88)
η(cid:48)(cid:48)(cid:54)=η
vηη(cid:48)(cid:48)
α
(k) Aη(cid:48)(cid:48)η
(cid:0)ηk − η(cid:48)(cid:48)k
β
(cid:1)2
(k)
,
(4)
αβ (ηk) = −22 Im
ΩA
(cid:17)
and(cid:16)
Asj
l
β
η(cid:48)k(cid:48)
= −2π
(cid:88)
Wkk(cid:48)δ(cid:0)ηk − η(cid:48)k(cid:48)(cid:1)
(cid:88)
− (cid:88)
η(cid:48)k(cid:48) − η(cid:48)(cid:48)k(cid:48)
η(cid:48)(cid:48)(cid:54)=η(cid:48)
(cid:104)uη(cid:48)(cid:48)kuη(cid:48)k(cid:48)(cid:105)(cid:104)uη(cid:48)k(cid:48)uηk(cid:105)Aηη(cid:48)(cid:48)
× Im
β
ηk − η(cid:48)(cid:48)k
η(cid:48)(cid:48)(cid:54)=η
(cid:104)uηkuη(cid:48)k(cid:48)(cid:105)(cid:104)uη(cid:48)(cid:48)k(cid:48)uηk(cid:105)Aη(cid:48)η(cid:48)(cid:48)
β
(k)
(cid:0)k(cid:48)(cid:1)
.
(5)
originates from the scattering-induced dressing. Equa-
tion (5) is diagrammatically represented in Fig. 1. The
summation over repeated spatial indices α, β is implied
hereafter. Here Aη(cid:48)(cid:48)η
(k) ≡ (cid:104)uη(cid:48)(cid:48)kAβuηk(cid:105) with uηk(cid:105)
the periodic part of the Bloch state. For impurities
, with ni the impurity density and V o
Wkk(cid:48) = ni
kk(cid:48)
the plane-wave part of the matrix element of the impurity
potential. For electron-phonon scattering
(cid:12)(cid:12)V o
kk(cid:48)(cid:12)(cid:12)2
β
(cid:12)(cid:12)U o
kk(cid:48)(cid:12)(cid:12)2
Wkk(cid:48) =
2Nq
V
,
(6)
where U o
k(cid:48)k is the plane-wave part of the electron-phonon
matrix element, Nq is the Bose occupation function of
phonons (q is the wave-vector of phonons with energy
ωq), V is the volume (area in two-dimension) of the
system, and the factor 2 accounts for the absorption and
emission of phonons.
When calculating the electric current A = ev, ΩA
αβ and
vsj
l are the Berry curvature and "side-jump velocity" [22,
24, 25], respectively. When calculating the spin current
A = j, ΩA
αβ is the so-called spin Berry curvature [11],
whereas Asj
l provides the spin-current counterpart of the
side-jump velocity [24, 26].
The occupation function of the carrier states is de-
composed, around the Fermi distribution f 0
l , into fl =
f 0
l + g2s
Its out-of-equilibrium part satisfies
the linearized steady-state Boltzmann equations eE ·
l ∂f 0
v0
l /∂l = −(cid:80)
ll(cid:48)(cid:0)g2s
l + ga
l .
l(cid:48) w2s
l(cid:48) (cid:1) and
(cid:88)
l − g2s
eE · vsj
l ∂f 0
l /∂l =
w2s
ll(cid:48) (ga
l − ga
l(cid:48))
(7)
l(cid:48)
Wkk(cid:48)(cid:12)(cid:12)(cid:104)ulul(cid:48)(cid:105)(cid:12)(cid:12)2
tering rate, v0
in the presence of weak scalar disorder [22]. w2s
ll(cid:48) = 2π
δ (l − l(cid:48)) is the lowest-Born-order scat-
l is the usual band velocity.
FIG. 1. Graphical representation of Eq. (5), where the off-
shell states away from the Fermi surface are marked by red
arrows. Wkk(cid:48) is represented by the disorder line connected
with two interaction vertexes.
(cid:17)
(cid:16)
(cid:88)
SH = (cid:80)
l
Collecting the above ingredients, the spin Hall current
is [27, 28] jSH = jbc
SH + jsj
SH + jad
SH. The first two terms
jbc
SH =
jbc
l
l , and jsj
f 0
SH =
jsj
l
g2s
l
(8)
(cid:17)
(cid:88)
(cid:16)
l
l j0
l ga
l
AH and jad
l . Whereas jad
arise from off-shell-states induced corrections to the semi-
classical value of j0
incorpo-
rates the nonequilibrium occupation function modified
by off-shell states, since ga
l appears as a response to the
generation term proportional to the "side-jump velocity"
vsj
[25]. In calculating the anomalous Hall (AH) current
l
[21] A = ev, jsj
AH are related to the transverse
(side-way) and longitudinal components of vsj
l , respec-
tively [25]. Thereby their sum is also often referred to
as the side-jump contribution in the literature on the
anomalous Hall effect [21, 22, 25]. Given this conven-
tion, we also include the jad
SH contribution, although jad
AH
has nothing to do with the original concept of side-jump,
and the microscopic theory [20, 23] indeed shows that ga
l
is not related to the interband elements of the out-of-
equilibrium density matrix. In fact, in two-dimensional
nonmagnetic models for the spin Hall effect, such as the
two-dimensional electronic systems with Rashba, cubic
Rashba and Dresselhaus spin-orbit couplings [29 -- 34], the
spin current operator (for out-of-plane spin component)
has only interband matrix elements, i.e., j0
l = 0, thus jad
SH
does not appear at all [27, 28].
Phonon-induced T-dependence of spin Hall conductiv-
ity. -- In order to show the T -dependence of the phonon-
induced side-jump spin Hall conductivity, we prove that
its values in the low-T and high-T limits can be different.
In the low-T limit, Wkk(cid:48) for phonon scattering is highly
peaked at vanishing scattering angle, and the on-shell
scattering can only be the intraband transition, hence in
Eq. (5) η(cid:48) = η, and k(cid:48) is very close to k. We then ex-
pand the integrand up to the first order of(cid:0)k(cid:48) − k(cid:1), get-
(cid:16)
(cid:17)
= (cid:80)
ting
Asj
l
β
k(cid:48) w2s
l(cid:48)lΩA
αβ (ηk)(cid:0)k(cid:48) − k(cid:1)
α, with w2s
l(cid:48)l =
𝐴𝛽𝜂′𝜂′′η′𝐤′η𝐤η′′𝐤′η𝐤𝐴𝛽𝜂′′𝜂′η′′𝐤′η′𝐤′η𝐤η𝐤𝐴𝛽𝜂′′𝜂η′′𝐤η𝐤η𝐤η𝐤𝐴𝛽𝜂𝜂′′η′′𝐤η′𝐤′η′𝐤′η𝐤 k(cid:48) w2s
curvature) yields ga
scattering-angle limit. Concurrently, vsj
2π Wkk(cid:48)δ(cid:0)ηk − ηk(cid:48)(cid:1) the scattering rate in the small-
×(cid:0)k(cid:48) − k(cid:1) (Ω is the vector form of the ordinary Berry
has [28](cid:16)
(cid:17)
and(cid:16)
l =(cid:80)
l = eE·(cid:2)k × Ω (l)(cid:3) ∂f 0
(cid:88)
(cid:17)
(cid:16)
E ·(cid:2)k × Ω (l)(cid:3) ∂f 0
αβ (l) E · v0
l /∂l. Thus one
(cid:88)
l(cid:48)lΩ (l)
l /∂l,
kαΩj
l ∂f 0
(cid:17)
jsj
SH
(10)
= e
= e
(9)
β
l
l /∂l.
jad
SH
j0
l
β
β
l
Thus σSH = (jSH)x /Ey is a T -independent constant in
the low-T limit. It is clear that this constant equals that
contributed by scalar-impurities in the long-range limit,
whose Wkk(cid:48) is also highly concentrated around vanishing
scattering angle.
than kBT indicating Wkk(cid:48) = 2kBT V−1(cid:12)(cid:12)U o
In the high-T limit, the phonon energy is much smaller
/ωq,
l ∼ T 0, and
l ∼ T , and ga
l ∼ T −1, jsj
(cid:12)(cid:12)2
k(cid:48)k
then we have g2s
consequently,
ρ ∼ T, σSH ∼ T 0.
(11)
Accordingly, in practice the high-T limit is identified as
the equipartition regime with linear-in-T resistivity [14].
This regime is usually marked qualitatively by T > TD
in textbooks, with TD the Debye temperature, but can
extend practically to about T > TD/3 in Pt, Cu and Au
[15, 35], and to about T > TD/5 in Al [35]. Besides, it is
apparent that the T -independent σSH in the equipartition
regime can be different from that in the low-T limit.
k(cid:48)k
(cid:12)(cid:12)2
troduced as [36, 37] λ2 = 2V−1(cid:12)(cid:12)U o
To acquire a more transparent picture, we assume
any large-angle electron-phonon scattering can occur via
normal processes, and take the approximation of the
deformation-potential electron-acoustic phonon coupling,
for which a electron-phonon coupling constant can be in-
/ωq, hence arriv-
ing at Wkk(cid:48) = λ2kBT in the high-T regime. This Wkk(cid:48)
is uniformly distributed on the Fermi surface, just simi-
lar to Wkk(cid:48) = niV 2
i contributed by randomly distributed
zero-range scalar impurities, with Vi the strength. There-
fore, we infer that the σSH due to phonons in the high-T
equipartition regime takes the same value as that due
to zero-range scalar impurities. This speculation can
be verified by noticing that g2s,ep
niV 2
i ,
Asj
= ga,ei
,
l
where the superscripts "ep" and "ei" mean the contribu-
tions due to electron-phonon scattering and zero-range
scalar impurities, respectively.
λ2kBT = g2s,ei
i and ga,ep
l
/niV 2
/λ2kBT =
(cid:17)ep
(cid:17)ei
(cid:16)
(cid:16)
Asj
l
l
l
l
According to the above results, σSH induced by
electron-acoustic phonon scattering is T -dependent pro-
vided that the σSH induced by scalar impurity scatter-
ing in the long-range and zero-range limits are different.
3
This unexpected relation in turn provides a qualitative
picture for comprehending the T -dependence of phonon-
induced side-jump, by analogy with the recently revealed
sensitivity of the side-jump conductivity to the scatter-
ing range of impurities [38]. The accessible phase-space
of the electron-phonon scattering changes with temper-
ature, thus implies a T -dependent average momentum
transfer, i.e., effective range, of this scattering.
Note that this mechanism differs from that for the T -
dependent ρ. To directly see this point, one need just
consider the fact that in the equipartition regime σSH ∼
T 0 although ρ ∼ T is still T -dependent.
The above revealed relation facilitates judging whether
a model system has a T -dependent phonon-induced side-
jump conductivity based on the familiar knowledge about
the impurity-induced side-jump. There are models which
possess different side-jump conductivities induced by
scalar impurity-scattering in the long-range and zero-
range limits, such as the Luttinger model describing p-
type semiconductor [39] and the k-cubic Rashba model
for the two-dimensional heavy-hole gas in confined quan-
tum wells [30]. In these systems the phonon-induced side-
jump conductivities are thus T -dependent.
In the k-cubic Rashba model [33, 34], the Hamiltonian
reads
H =
2k2
2m
+ i
αR
2
(cid:16)
(cid:17)
σ+k3− − σ−k3
+
,
(12)
1
where k = k (cos φ, sin φ) is the two-dimensional wave-
vector, k± = kx ± iky, σ's are Pauli matrices with σ± =
σx ± iσy, αR is the spin-orbit coupling coefficient that
can be tuned to very large values by the gate voltage
2 {σz, vx}
[34]. The spin current operator [31, 32] x = 3
SH + jsj
has only interband components, hence jSH = jbc
SH.
Letting η = ± labels the two Rashba bands, the spin
Berry curvature is Ωj
4mαRk3 , thus σbc
SH =
x /Ey = 9e2
[30, 31], with kη the
Fermi wave-number of band η. The side-jump spin Hall
conductivity due to electron-phonon scattering in the
(cid:16)
low-T limit is given by Eq. (9) as
(cid:80)
yx (ηk) = −η 93 sin2 φ
η ηk−1
(cid:17)
(cid:0)jbc
16πmαR
(cid:1)
SH
η
2
1
4
σbc
SH.
(13)
σsj
SH =
When mαR/2 (cid:28) 1/
In the high-T regime, we have jsj
jsj
SH
√
x
/Ey =
πn [31], one has σsj
SH = 9e/32π.
l = 0 [28], leading to
σsj
SH = 0.
(14)
Since the side-jump conductivities in the high-T and low-
T limits are different, there must be a crossover in the
intermediate regime resulting in the T -dependent behav-
ior.
Temperature -- dependent spin Hall conductivity in pure
Platinum. -- To show the applicability of our theoreti-
cal ideas in real materials, we perform a first-principles
calculation to the spin Hall conductivity of pure Pt in
the range 20 -- 300 K. The minimal
interband split-
ting around the Fermi level of Pt is much larger than
300 K [9], thus the spin Berry-curvature contribution
should be T -independent up to 300 K. The tempera-
ture is modeled by populating the calculated phonon
spectra of Pt into a large supercell with its length L
along fcc [111] and 5 × 5 unit cells in the lateral di-
mensions [15, 40]. Then the transport calculation is car-
ried out using the above disordered (finite-temperature)
supercell sandwiched by two perfectly crystalline (zero-
temperature) Pt electrodes. The scattering matrix is
obtained using the so-called "wave function matching"
technique within the Landauer-Buttiker formalism [40].
The calculated total resistance of the scattering geome-
try is found to be linearly dependent on L following the
Ohm's law. By varying L in the range of 5 -- 60 nm,
we extract the resistivity at every temperature using a
linear least squares fitting for the calculated resistances.
For each L, at least 10 random configurations have been
considered to ensure both average value and standard
deviation well converged with respect to the number of
configurations. The calculated resistivity ρ is plotted in
Fig. 2(a) as a function of temperature. The spin-Hall
angle ΘSH is computed by examining the ratio of trans-
verse spin current density and longitudinal charge current
density [10]. At every temperature, we use more than 20
random configurations, each of which contains 60 nm-
long disordered Pt. Then the spin Hall conductivity is
obtained as σSH = (/e)ΘSH/ρ, shown in Fig. 2(b).
4
low the equipartition regime, in agreement with our the-
oretical prediction.
Finally, we discuss the possibility of observing the pre-
dicted effect in experiments. In high-purity metals, the
electron-electron scattering dominates over the electron-
phonon scattering in determining transport behaviors at
very low temperature. To observe our prediction, lower
characteristic temperature Tt marking the crossover from
the electron-electron dominated regime to the electron-
phonon dominated one is required, such that the inter-
mediate range from Tt to the high-T equipartition regime
is wide enough. In experimentally accessible high-purity
Pt samples with residual resistivity as small as 10−3 --
10−2 µΩ cm [41, 42], Tt can be as low as 10K, and at
T = 20 K the phonon-induced ρ is nearly one order of
magnitude larger than that contributed by the electron-
electron scattering and the residual resistivity [42]. Be-
cause in high-purity Pt, the T -linear scaling of ρ emerges
at T (cid:38) 80 K [15], the suitable range for observing the
first-principles predicted T -dependence of σSH [Fig. 2(b)]
is 20 K (cid:46) T (cid:46) 80 K. Very recently experimentalists have
been developing new techniques, with which the spin cur-
rent is generated and detected in a single transition-metal
sample, thus avoiding all the complications associated
with the interfaces and shunting effect [7, 8]. The pre-
dicted effect is expected to be observed as the quality of
Pt samples in such measurements is improved.
We thank Ming Xie, Tianlei Chai and Haodi Liu for
helpful discussions. Q.N. is supported by DOE (DE-
FG03-02ER45958, Division of Materials Science and En-
gineering) on the transport formulation in this work.
C.X. is supported by NSF (EFMA-1641101) and Welch
Foundation (F-1255). S.A.Y. is supported by Singapore
Ministry of Education AcRF Tier 2 (MOE2017-T2-2-
108). Y.L. and Z.Y are supported by the National Natu-
ral Science Foundation of China (Grants No. 61604013,
No. 61774018, and No. 11734004), the Recruitment Pro-
gram of Global Youth Experts, and the Fundamental Re-
search Funds for the Central Universities (Grants No.
2016NT10 and No. 2018EYT03).
FIG. 2. Calculated longitudinal resistivity ρ (a) and spin Hall
conductivity σSH (b) of pure Pt as a function of temperature.
The black dashed line in panel (a) illustrates the linear de-
pendence.
For T (cid:38) 80 K, a linear-in-T ρ is obtained, and σSH is
approximately a constant of 1.6 × 105 /e (Ω m)−1 [10].
Below the equipartition regime, ρ deviates from the lin-
ear T -dependence [illustrated by the black dashed line
in Fig. 2(a)], concurrently the calculated σSH increases
with decreasing temperature. At T = 20 K, σSH reaches
2.3 × 105 /e (Ω m)−1. Compared to the value at 80
K, the T -variation of σSH is as large as 50%. This T -
dependence just begins when the temperature drops be-
∗ congxiao@utexas.edu
† zyuan@bnu.edu.cn
[1] J. Sinova, S. O. Valenzuela, J. Wunderlich, C. H. Back,
and T. Jungwirth, Rev. Mod. Phys. 87, 1213 (2015).
[2] A. Hoffmann, IEEE Trans. Magn. 49, 5172 (2013).
[3] T. Seki, Y. Hasegawa, S. Mitani, S. Takahashi, H. Ima-
mura, S. Maekawa, J. Nitta, and K. Takanashi, Nat.
Mater. 7, 125 (2008).
[4] O. Mosendz, J. E. Pearson, F. Y. Fradin, G. E.W. Bauer,
S. D. Bader, and A. Hoffmann, Phys. Rev. Lett. 104,
046601 (2010).
[5] L. Liu, C.-F. Pai, Y. Li, H.W. Tseng, D. C. Ralph, and
R. A. Buhrman, Science 336, 555 (2012).
[6] E. Sagasta, Y. Omori, M. Isasa, M. Gradhand, L. E.
0.1110ρ (µΩ cm)20305070100200300Temperature (K)12σSH (105 h_/e Ω-1m-1)(a)(b) 5
Hueso, Y. Niimi, Y. C. Otani, and F. Casanova, Phys.
Rev. B 94, 060412(R) (2016).
[7] C. Stamm, C. Murer, M. Berritta, J. Feng, M. Gabureac,
P. M. Oppeneer, and P. Gambardella, Phys. Rev. Lett.
119, 087203 (2017).
[8] C. Chen, D. Tian, H. Zhou, D. Hou, and X. Jin, Phys.
Rev. Lett. 122, 016804 (2019).
[9] T. Tanaka, H. Kontani, M. Naito, T. Naito, D. S. Hi-
rashima, K. Yamada, and J. Inoue, Phys. Rev. B 77,
165117 (2008).
[10] L. Wang, R. J. H. Wesselink, Y. Liu, Z. Yuan, K. Xia,
and P. J. Kelly, Phys. Rev. Lett. 116, 196602 (2016).
[11] Y. Sun, Y. Zhang, C. Felser, and B. Yan, Phys. Rev.
Lett. 117, 146403 (2016).
[12] L. Berger, Phys. Rev. B 2, 4559 (1970).
[13] A. Crepieux and P. Bruno, Phys. Rev. B 64, 014416
[27] For our purpose of showing the T -dependence of the spin
Hall conductivity induced by electron-phonon scattering,
the results for jsj
SH are sufficient. For complete-
ness, we present in Ref. [28] the other spin Hall contribu-
tion of order (Wkk(cid:48) )0 from the antisymmetric part of the
third-Born-order scattering rate. This contribution also
vanishes when j0
SH and jad
l = 0.
[28] See Supplemental Material for the transport formalism
for the spin Hall conductivities of order (Wkk(cid:48) )0 and cal-
culation details of the spin Hall conductivity in the k-
cubic Rashba model, as well as discussions on the low-
T limit in the presence of both electron-phonon and
electron-impurity scattering.
[29] O. V. Dimitrova, Phys. Rev. B 71, 245327 (2005).
[30] S. Y. Liu and X. L. Lei, Phys. Rev. B 72, 155314 (2005).
[31] J. Schliemann and D. Loss, Phys. Rev. B 71, 085308
(2001).
(2005).
[14] J. M. Ziman, Principles of the Theory of Solids (Cam-
[32] B. A. Bernevig and S. C. Zhang, Phys. Rev. Lett. 95,
bridge University Press, Cambridge, 1972).
016801 (2005).
[15] Y. Liu, Z. Yuan, R. J. H. Wesselink, A. A. Starikov,
M. van Schilfgaarde, and P. J. Kelly, Phys. Rev. B 91,
220405(R) (2015).
[16] S. K. Lyo and T. Holstein, Phys. Rev. Lett. 29, 423
[33] R. Moriya, K. Sawano, Y. Hoshi, S. Masubuchi, Y. Shi-
raki, A. Wild, C. Neumann, G. Abstreiter, D. Bougeard,
T. Koga, and T. Machida, Phys. Rev. Lett. 113, 086601
(2014).
(1972).
[17] H.-A. Engel, B. I. Halperin, and E. I. Rashba, Phys. Rev.
Lett. 95, 166605 (2005).
[18] W. K. Tse and S. Das Sarma, Phys. Rev. Lett. 96, 056601
(2006).
[19] E. M. Hankiewicz and G. Vignale, Phys. Rev. B 73,
115339 (2006).
[20] W. Kohn and J. M. Luttinger, Phys. Rev. 108, 590
(1957); J. M. Luttinger, Phys. Rev. 112, 739 (1958).
[21] N. A. Sinitsyn, J. Phys.: Condens. Matter 20, 023201
(2008).
[22] N. A. Sinitsyn, Q. Niu, and A. H. MacDonald, Phys. Rev.
B 73, 075318 (2006).
[23] C. Xiao, Z. Z. Du, and Q. Niu, arXiv: 1907.00577
[24] C. Xiao and Q. Niu, Phys. Rev. B 96, 045428 (2017).
[25] N. A. Sinitsyn, A. H. MacDonald, T. Jungwirth, V. K.
Dugaev, and J. Sinova, Phys. Rev. B 75, 045315 (2007).
[26] C. Xiao, Front. Phys. 13, 137202 (2018).
[34] H. Liu, E. Marcellina, A. R. Hamilton, and D. Culcer,
Phys. Rev. Lett. 121, 087701 (2018).
[35] J. M. Ziman, Electrons and Phonons (Clarendon, Oxford,
1960).
[36] A. A. Abrikosov, L. P. Gor'kov, and I. E. Dzyaloshin-
skii, Quantum Field Theoretical Methods in Statistical
Physics (Pergamon Press, New York, 1965).
[37] J. Rammer and H. Smith, Rev. Mod. Phys. 58, 323
(1986).
[38] I. A. Ado, I. A. Dmitriev, P. M. Ostrovsky, and M. Titov,
Phys. Rev. B 96, 235148 (2017).
[39] S. Murakami, Phys. Rev. B 69, 241202(R) (2004).
[40] Anton A. Starikov, Yi Liu, Zhe Yuan and Paul J. Kelly,
Phys. Rev. B 97, 214415 (2018).
[41] G. K. White and S. B. Woods, Phil. Trans. Roy. Soc.
(London) A251, 273 (1958).
[42] R. H. Freeman, F. J. Blatt, and J. Bass, Phys. Kondens.
Materie 9, 271 (1969).
|
1106.3697 | 1 | 1106 | 2011-06-19T00:12:16 | Electronic charge and spin density distribution in a quantum ring with spin-orbit and Coulomb interactions | [
"cond-mat.mes-hall"
] | Charge and spin density distributions are studied within a nano-ring structure endowed with Rashba and Dresselhaus spin orbit coupling (SOI). For a small number of interacting electrons, in the presence of an external magnetic field, the energy spectrum of the system is calculated through an exact numerical diagonalization procedure. The eigenstates thus determined are used to estimate the charge and spin densities around the ring. We find that when more than two electrons are considered, the charge-density deformations induced by SOI are dramatically flattened by the Coulomb repulsion, while the spin density ones are amplified. | cond-mat.mes-hall | cond-mat |
Electronic charge and spin density distribution in a quantum ring
with spin-orbit and Coulomb interactions
Csaba Daday,1, 2 Andrei Manolescu,1 D. C. Marinescu,3 and Vidar Gudmundsson2
1School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik, Iceland
2Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
3Department of Physics and Astronomy, Clemson University, Clemson, SC 29621, USA
Charge and spin density distributions are studied within a nano-ring structure endowed with
Rashba and Dresselhaus spin orbit coupling (SOI). For a small number of interacting electrons,
in the presence of an external magnetic field, the energy spectrum of the system is calculated
through an exact numerical diagonalization procedure. The eigenstates thus determined are used to
estimate the charge and spin densities around the ring. We find that when more than two electrons
are considered, the charge-density deformations induced by SOI are dramatically flattened by the
Coulomb repulsion, while the spin density ones are amplified.
PACS numbers: 71.70.Ej, 73.21.Hb, 71.45.Lr
I.
INTRODUCTION
The possibility of controlling the flow of the electron
spins in semiconductor structures by external electric
means through spin-orbit interaction (SOI) has domi-
nated the recent past of spintronics research. This fun-
damental principle, first explored in the Datta-Das spin
transistor configuration,1 has been guiding a sustained
effort in understanding all the phenomenological impli-
cations of this interactions on systems of electrons. The
coupling between spin and orbital motion results either
from the two-dimensional confinement (Rashba)2 or from
the inversion asymmetry of the bulk crystal structure
(Dresselhaus).3 The usual expression of the the spin-orbit
Hamiltonian HSO retains only the linear terms in the
electron momentum p = (px, py) and is given by
HSO =
α
(σxpy − σypx) +
β
(σxpx − σypy) .
(1)
The Rashba and Dresselhaus coupling constants are α
and β, respectively, while σx,y,z are the Pauli matrices. In
general, the two interactions are simultaneously present
and often have comparable strengths. While α, the cou-
pling constant of the Rashba interaction, can be modi-
fied by external electric fields induced by external gates,
the strength of the Dresselhaus SOI, β, is fixed by the
crystal structure and by the thickness of the quasi two-
dimensional electron system.4,5 In many situations of in-
terest, an additional energy scale is introduced by the
Zeeman interaction of the electron spin with an external
magnetic field, proportional to the effective gyromagnetic
factor, g∗, which depends on the material energy-band
structure. While g∗ = −0.44 is very small in GaAs, it
can be more that 100 times larger in InSb.
The interplay between the two types of SOI, which
have competing effects on the precession of the electron
spin as they rotate it in opposite directions, and the
Zeeman splitting, which minimizes the energy by align-
ing the spin parallel to the external field, determines
the ground state polarization of the electron system and
the characteristics of spin transport. The investigation
of such problems in mesoscopic rings has been pursued
intensively by several authors.6 -- 10 In particular, it was
noticed that,
in the absence of the Coulomb interac-
tion among the electrons, the interference between the
Rashba and Dresselhaus precessions relative to the or-
bital motion, leads to the creation of an inhomogeneous
spin and charge distribution around the ring.8 The charge
inhomogeneity created in this situation has a symmetric
structure with two maxima and two minima around the
ring and will be called here a charge-density deformation
(CDD). The effect of the Coulomb interaction on this
type of charge distribution has been considered for two
electrons. It was obtained that, on account of the elec-
trostatic repulsion, the two electrons become even more
localized in the potential minima associated to the CDD,
leading to an amplitude increase.9,10
In this work we obtain an estimate of the effect of the
Coulomb interaction on the charge and spin distribution
associated with N = 2, 3 and 4 electrons in a ring with
SOI coupling by an exact diagonalization procedure that
uses the configuration interaction method. Our results
indicate that when the number of electrons increases, the
mutual repulsion leads to more uniform charge distribu-
tion around the ring, generating a dramatically flattened
CDD. In contrast, the spin-density deformation (SDD) is
amplified by the Coulomb effects. This can be explained
by the appearance of a stronger repulsion between same
spin electrons, leading to more favorable spin orienta-
tions.
II. THE RING MODEL
The system of
interest in our problem is a two-
dimensional quantum ring of exterior and interior radii,
Rext and Rint respectively. The ring is placed in a per-
pendicular magnetic field B associated in the symmetric
gauge with a vector potential A = B/2(−y, x, 0). The
single-particle Hamiltonian of an electron of momentum
2
In the same basis, the Zeeman Hamiltonian is simply
diagonal in the spatial coordinates,
hkjσHZ k′j′σ′i =
1
2
T tBγ(σz)σσ′ δkk′ δjj ′ ,
(4)
where γ = g∗m∗/(2me) is the ratio between the Zeeman
gap and the cyclotron energy, me being the free electron
mass.
For the spin-orbit Hamiltonian we obtain:
hkjσHSOk′j′σ′i =
1
2
T tα"tB
rk
4Rext
(σj
r)σσ′ δkk′ δjj ′
+ it1/2
ϕ
(σj
r + σj+1
r
2
)σσ′
δkk′ δjj ′ +1 − it1/2
r
(σj
ϕ)σσ′ δkk′ +1δjj ′#
+ T tβXk,j "σj
r → (σj
ϕ)∗ and σj
ϕ → −(σj
r)∗# + h.c. ,
(5)
where tα = α/(RextT ) and tβ = β/(RextT ) are the
two types of spin-orbit relative energies, while σr(ϕ) =
σx cos ϕ + σy sin ϕ and σϕ(ϕ) = −σx sin ϕ + σy cos ϕ are
the radial and angular Pauli matrices, respectively. We
used the slightly shorter notations σj
r = σr(ϕj ) and
σj
ϕ = σϕ(ϕj) for the matrices at the particular angles
on our lattice. The Rashba spin-orbit terms are all in-
cluded in the first square bracket. The Dresselhaus terms
are very similar to the Rashba ones, being given by the
substitutions indicated in the second square bracket.
The single particle states of the noninteracting Hamil-
tonian (2), Hψa = ǫaψa, are computed as eigenvalues
and eigenvectors of the matrices (3)-(5), ψa(rk, ϕj) =
Pσ Ψa,σ(k, j)σi. where Ψa,σ(k, j) are c−numbers.
In the basis provided by {ψa} the interacting many-
body Hamiltonian is written in the second quantization
as
ǫac†
aca +
H =Xa
1
2 Xabcd
Vabcdc†
ac†
bcdcc ,
(6)
where c†
a and ca are the creation and annihilation opera-
tors on the single-particle state a. The matrix elements
of the Coulomb potential V (r − r′) = e2/(κr − r′), κ be-
ing the dielectric constant of the material, are in general
give by
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
t
x
e
R
/
y
-1.0
-1.0
-0.5
0.0
x/Rext
0.5
1.0
FIG. 1:
(Color online) The discretized ring with Rint =
0.8Rext, and 10 radial × 50 angular sites. The sites are shown
with circular points. The thin dotted lines connection sites
are for guiding the eye.
p = −i∇ + eA and effective mass m∗ is written as the
sum of an orbital term HO = p2/2m∗, a Zeeman contri-
bution HZ = (1/2)g∗µBBσz and the spin-orbit coupling
given in Eq. (1). The ensuing expression,
H = HO + HZ + HSO ,
(2)
is discretized in a standard manner6,7,11 on a grid12
defined by Nr radial and Nϕ angular sites, as shown
in Fig. 1. The radial coordinate of each site is rk =
Rext − (k − 1)δr, with k = 1, 2, ..., Nr, while δr =
(Rext − Rint)/(Nr − 1) is the distance between adja-
cent sites with the same angle. Similarly, the angular
coordinate is ϕj = (j − 1)δϕ, where j = 1, 2, ..., Nϕ and
δϕ = 2π/Nϕ is the angle between consecutive sites with
the same radius. The Hilbert space is spanned by the
ket-vectors kjσi, where the first integer, k, stands for
the radial coordinate, the second one, j, for the angular
coordinate, and σ = ±1 denotes the spin projection in
the z direction.
In this basis {kjσi}, the matrix elements of the orbital
Hamiltonian are given by:
hkjσHOk′j′σ′i =
T δσσ′("tϕ + tr +
−(cid:20)tϕ + tB
i
1
2
t2
B(cid:18) rk
4Rext(cid:19)2# δkk′ δjj ′
4δϕ(cid:21) δkk′ δjj ′ +1 + trδkk′ +1δjj ′) + h.c. .
(3)
Vabcd = hψa(r)ψb(r′)V(r − r′)ψc(r)ψd(r′)i .
(7)
In the present discrete model the double scalar product
is in fact a double summation over all the lattice sites
and spin labels
T = 2/(2m∗R2
ext) is the energy unit, while Rext is the
length unit. In T units, we obtain tϕ = [Rext/(rkδϕ)]2
the angular hopping energy, tr = (Rext/δr)2 the radial
hopping energy, and tB = eB/(m∗T ) the magnetic cy-
clotron energy. (h.c. denotes the Hermitian conjugate.)
Vabcd = T tC Xkjσ
k′j ′σ′
Ψ∗
a,σ(kj)Ψ∗
b,σ′ (k′j′)
Rext
rjk − rj ′k′
(8)
× Ψc,σ(kj)Ψd,σ′(k′j′) .
(a)
(b)
(c)
T
/
y
g
r
e
n
E
174
172
170
168
166
164
1
z
S
0
-1
2
1
0
0
1
2
3
4
3
GS
ES1
ES2
ES3
6
7
8
9 10
5
tB
(9)
0
0
0
1
x
c
∆
The new energy parameter introduced by the Coulomb
repulsion is tC = e2/(κRextT ). In the above summation
over the sites, the contact terms (k = k′, j = j′) are
avoided, as their contribution vanishes in the continuous
limit.
The many-body states Φµ are found by solving the
eigenvalue problem for the Hamiltonian (6),
HΦµ = EµΦµ .
A potential solution of the equation is written in the con-
figuration interaction representation13 -- 15 as a linear com-
bination of the non-interacting system eigenstates (Slater
determinants),
cµααi ,
Φµ =Xα
1 , iα
2 , ..., iα
Ki} where iα
havePa iα
with {αi = iα
a = 0, 1 is the occu-
pation number of the single-particle state ψa and K is
the number of single-particle states considered. The oc-
cupation numbers iα
K are listed in the increasing energy
order, so ǫK is the highest energy of the single-particle
state included in the many-body basis. For any αi we
a = N , which is the number of electrons in the
ring. It is straightforward to derive the matrix elements
of Hαα′ using the action of the creation and annihila-
tion operators on the many-body basis. In practice Eq.
(9) is convergent with K for a sufficiently small number
of electrons, and sufficiently small ratio of Coulomb to
confinement energy, tC . This procedure, also known as
"exact diagonalization", does not rely on any mean field
description of the Coulomb effects, like Hartree, Hartree-
Fock, or DFT.16
To be able to carry the numerical calculations in a rea-
sonable amount of time, we choose a small ring of radii
Rext = 50 nm and Rint = 0.8Rext, containing N ≤ 4
electrons. The discretization grid has 10 radial and 50 an-
gular points (500 sites), as shown in Fig. 1. Two common
semiconductor materials used in the experimental spin-
tronics are used for the selection of the material constants
needed: InAs with m∗ = 0.023me, g∗ = −14.9, κ = 14.6,
and estimated (or possible) values for the spin-orbit in-
teractions α ≈ 20 and β ≈ 3 meVnm; InSb with m∗ =
0.014me, g∗ = −51.6, κ = 17.9, and α ≈ 50, β ≈ 30
meVnm.4,5 The relative energies which we defined are:
for InAs tα = 0.60, tβ = 0.09, tC = 2.9, γ = −0.17; for
InSb tα = 0.92, tβ = 0.55, tC = 1.5, γ = −0.36.
In
our calculations we have considered material parameters
somewhere in between these two sets: tα = 0.7, tβ =
0.3, tC = 2.2, γ = −0.2
III. RESULTS
A. Single particle calculations
In the absence of the SOI, (α = β = 0), the single
particle Hamiltonian (2) shares its eigenstates ψa with
FIG. 2: (Color online) (a) The lowest 12 energies of the single
particle states vs. the magnetic energy tB. The solid (red)
and the dashed (green) lines show the states with positive
and negative parity, respectively. (b) The expected value of
the spin projection along the z direction Sz, in units of /2,
for the first four states on the energy scale. (c) The standard
deviation ∆c of the charge distribution around the circle with
radial site index k = 6, for the first four energy states: ground
state (GS), first, second, and third exited states (ES1, ES2,
ES3). The same association of line types with states is used
in panel (b).
the z components of the angular momentum Lz and spin
Sz = σz/2. In the presence of only one type of SOI, ei-
ther α 6= 0 or β 6= 0, the Hamiltonian commutes with the
z component of the total angular momentum, Lz + Sz,
which is conserved. When both α 6= 0 and β 6= 0,
the angular momentum is no longer conserved. How-
ever, ψa continue to be eigenstates of the parity operator
P = Πσz, Π being the (three dimensional) spatial in-
version operator.
Indeed, the general Hamiltonian (2)
commutes with P, which can be easily verified by using
Πp = −pΠ and the commutation rules of the Pauli ma-
trices. So in general Pψa = sψa, and thus the parity
s = ±1 of any state a is conserved, i. e. it is indepen-
dent on the magnetic field. In particular, when α = β
and g∗ = 0, all states become parity-degenerate at any
magnetic field.8,10,17 We identify the parity of the single
particle states calculated on our discrete ring model by
looking at the relation ψa,σ(k, j) = sσψa,σ(k, ¯)) where
(k, j) and (k, ¯) are diametrically opposed sites, with an-
gular coordinates ϕ¯ = ϕj + π.
In Fig. 2 we show the single particle states energy for
0 < tB < 10 (units of T ), which corresponds to a mag-
netic field strength between 0 and 1.32 Tesla. Further
increment of the magnetic field requires an augmentation
of the number of sites on the ring in order to maintain the
discrete model as a reasonable approximation of a physi-
cally continuous ring. At zero magnetic field all states are
parity degenerate, which is just the ordinary spin degen-
eracy. The degeneracy is in general lifted by a finite mag-
netic field. There are, however, some particular values of
tB where the degeneracy persist. This situation is repre-
sented in Fig. 2(a) by all intersection points of two lines
corresponding to the two possible parities. Such intersec-
tions do not occur between states with the same parity.
Due to the spin-orbit coupling, the orbital momentum
of one state depends on the spin of the other state and
vice versa, and, consequently, states of same parity do
in fact interact and thus avoid intersections.10 Although
in Fig. 2(a) many states represented by the same line
type apparently cross each other, in reality there are al-
ways tiny gaps between them, similar to those visible at
tB ≈ 2 between the first and the second excited states
or at tB ≈ 5.5 between the first, second, and third ex-
cited states. The magnitude of these gaps depends on the
g−factor, reducing in size for a smaller g∗ parameter.
In Fig. 2(b) the evolution of the expected spin in the
z direction, Sz = hψaσzψai/2 is presented for the first
four states in the energy order. One can see how the
spin flips for states avoiding the crossing, like those with
negative parity at tB ≈ 2 (dashed and dotted lines in
Fig. 2(b)).
Only one type of SOI, either Rashba or Dresselhaus,
is sufficient to avoid the crossing of states with the same
parity, but in this case the charge and the spin densi-
ties are uniform around the ring. When both SOI types
are present the charge and spin densities become nonuni-
form. This situation is equivalent with the presence of
a potential with two maxima and two minima around
the ring, having reflection symmetry relative to the axes
y = x (or ϕ = π/4, corresponding to the crystal direction
[110]) and y = −x (or ϕ = −π/4, corresponding to the
crystal direction [1¯10]).8,10 The amplitude of the CDD
is illustrated in Fig. 2(c) where the standard deviation
(in the statistical sense) ∆c of the charge density cal-
culated around one circle on the ring, close to the mean
radius, with radial site index k = 6, is plotted for the low-
est four energy states. The density deformation occurs
on account of the two combined SOI types which lead
to spin interference and additional interaction between
states with the same parity. Consequently, the ampli-
tude of the CDD for a certain state is maximum at those
magnetic fields where the parity degeneracy is lifted (the
state avoids a crossing with another state of the same
parity). In Fig. 2(c) this is clearly seen at tB ≈ 2, for the
excited state. In this example the CDD in the ground
state is very weak. The sharp peak at tB ≈ 0.4 indicates
the existence of a narrow gap between the 4-th and 5-th
energy states that avoid crossing.
4
T
/
y
g
r
e
n
E
331
330
329
328
327
494
493
492
491
659
658
657
656
655
333
332
331
330
329
501
500
499
498
673
672
671
670
669
(a) N=2 tC=0
(c) N=3 tC=0
(e) N=4 tC=0
0
2
4
6
8
10
tB
(b) N=2 tC=2.2
(d) N=3 tC=2.2
(f) N=4 tC=2.2
0
2
4
tB
6
8
10
FIG. 3: (Color online) Energy spectra of the first 12 states
for N = 2, 3, and 4 electrons without Coulomb interaction,
tC = 0 in panels (a),(c),(e), and with Coulomb interaction,
tC = 2.2, in panels (b),(d),(f). The solid (red) and the dashed
(green) lines show the states with positive and negative parity,
respectively.
B. Many particle calculations
In the following considerations, we will include more
than one electron. In Fig. 3 we compare the energy spec-
tra for the first 12 states vs.
the magnetic energy for
N = 2, 3, and 4 electrons, without and with Coulomb
interaction. Since the Coulomb interaction is invariant
at spatial inversion (and independent on spin) the par-
ity s is also conserved in the many-body states. Spectra
drawn for tC = 0 and tC = 2.2 have similar features.
The interacting spectrum presents a shift to higher ener-
gies, on account of the additional Coulomb energy, and a
slight increase of the gaps at high magnetic fields. More-
over, the crossings and the anti-crossings (points where
the crossings were avoided) of the energy levels have a
tendency to shift slightly to higher magnetic fields. Sim-
ilarly, the gap between the ground state and the excited
states increases at high tB.
The total spin Sz for each of the first three energy
states is shown in Fig. 4. At zero magnetic field, for an
even number of electrons, here N = 2 or N = 4, the
ground state is non-degenerate and has total spin Sz =
0, i. e. the spin-up and spin-down states of individual
electrons compensate. When the field is applied, the first
spin flip in the interacting ground state, as well as the
spin saturation, occur at lower magnetic fields than in
the absence of the Coulomb repulsion. This is a result of
the mixing of spin states with the same parity produced
z
S
2
1
0
-1
-2
2
1
0
-1
3
2
1
0
-1
2
1
0
-1
GS
ES1
ES2
(a) N=2 tC=0
0 2 4 6 8 10 0 2 4 6 8 10
(b) N=2 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
-2
2
1
0
(c) N=3 tC=0
0 2 4 6 8 10 0 2 4 6 8 10
(d) N=3 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
-1
3
2
1
0
(e) N=4 tC=0
0 2 4 6 8 10 0 2 4 6 8 10
tB
-1
(f) N=4 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
tB
FIG. 4:
(Color online) The total spin projection in the z
direction, in units of /2, for the many body states with N =
2, 3, 4 electrons. Without interaction, i. e. tC = 0 in panels
(a),(c),(e), and with interaction, with tC = 2.2, in panels
(b),(d),(f). Only the first three states are shown here, the
ground state (GS), the 1-st excited states (ES1), and the 2-nd
excited state (ES2). The magnetic energy tB varies between
0 and 10 and the lines showing the excited states are shifted
to the right, for clarity.
by the interaction. For N = 3 the ground state is spin
(double) degenerate at zero field. In the presence of the
Coulomb interaction, the total spin in the ground state
and the higher state is reversed.
Similar to the case of one electron (N = 1, Fig. 2), the
charge deformation of each state is maximized for those
magnetic fields where the state has an anti-crossing (or
repulsion) with another state of the same parity. The
charge deformation parameter ∆c is shown in Fig. 5. For
N = 2 the amplitude of the CDD increases with the
Coulomb interaction. There is a simple reason for that:
the potential associated with the charge deformation has
two minima diametrically opposite on the ring and each
of the two electrons tends be localized in one of these min-
ima. The mutual Coulomb repulsion fixes the electrons in
those places better.9,10 The situation changes, however,
for N > 2. The Coulomb forces spread the electrons
differently, more or less uniformly, such that the charge
deformation created by the SOI is drastically reduced. In
other words, the associated potential is strongly screened
even by one extra electron above N = 2. This effect can
be clearly seen in Fig. 5, comparing panels (c) with (d)
and (e) with (f). The vertical scale of panels (d) and (e)
has been magnified three times, for visibility.
0
0
0
1
x
c
∆
3.0
2.0
1.0
0.0
3.0
2.0
1.0
0.0
3.0
2.0
1.0
0.0
(a) N=2 tC=0
GS
ES1
ES2
0 2 4 6 8 10 0 2 4 6 8 10
(c) N=3 tC=0
0 2 4 6 8 10 0 2 4 6 8 10
(e) N=4 tC=0
0 2 4 6 8 10 0 2 4 6 8 10
tB
3.0
2.0
1.0
0.0
0.8
0.6
0.4
0.2
0.0
0.8
0.6
0.4
0.2
0.0
5
(b) N=2 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
(d) N=3 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
(f) N=4 tC=2.2
0 2 4 6 8 10 0 2 4 6 8 10
tB
FIG. 5:
(Color online) The standard deviation ∆c of the
charge on the circle k = 6 around the ring, as a measure of the
amplitude of the charge deformation. Shown are the results
for the ground state (GS), the 1-st excited states (ES1), and
the 2-nd excited state (ES2), for N = 2, 3, 4 electrons with-
out without (tC = 0), and with interaction (tC = 2.2). The
amplitude of the CDD's is strongly reduced by the Coulomb
effects for N = 3, 4; notice the different scales used in the
paired panels (c),(d) and (e),(f). The magnetic energy tB
varies between 0 and 10 and the lines corresponding to the
excited states are shifted to the right, for clarity.
only generates the specific effective potential which de-
termines the CDD. In the absence of SOI (α = β = 0),
we checked that a similar screening effect occurs in the
presence of a potential that induces a charge deformation
comparable to that obtained with the SOI. It is, however,
surprising that by adding only one extra electron such a
drastic effect ensues.
Next, we investigate the effect of the Coulomb inter-
action on the spin distribution around the ring. The
standard deviation of the spin density projected along
the z direction, ∆z, is plotted in Fig. 6 where we show
the results calculated as before for the circle correspond-
ing to the sites with radial coordinate k = 6. The spin
density deformation (SDD) is actually amplified by the
Coulomb interaction for all N = 2, 3, 4. As the CDD's,
the SDD's reach their maximum at the magnetic fields
where level repulsion occurs and remains prominent even
when the gaps are very small. The Coulomb enhance-
ment is a result of the mixing of states with the same
parity, but with different spin orientation produced by
the Coulomb potential. Consequently the SDD's have in
general a richer structure than the CDD's.
In principle, the screening of the charge deformation
is not particularly related to the spin-orbit effects. SOI
Finally, in Fig. 7 we display an example of CDD and
SDD, obtained for N = 4 interacting particles. The
6
charge and spin distributions corresponding to the sec-
ond excited state and tB = 4.5 are illustrated in Figs.
5(f) and 6(f), respectively. The CDD is weak, but still it
has four visible maxima. For two electrons the CDD has
only two maxima which are along the directions x = y
or x = −y, depending on the state and on the magnetic
field, both with and without the Coulomb interaction. In
particular, for a strictly one-dimensional ring model and
N = 2, in the ground state, the maxima are always along
the line x = −y,8,9 whereas for a two-dimensional model
they can also be along x = y.10 But in general, for N > 2
electrons, screening effects may distribute the charge in
more complicated configurations. Similar profiles with
multiple local oscillation may be obtained for the spin
density, eventually becoming spin-density waves around
the ring.
IV. CONCLUSIONS
We calculated the many-body states of a system of
N = 2, 3, and 4 interacting electrons located in a ring of
finite width with Rashba and Dresselhaus spin-orbit cou-
pling, in the presence of a magnetic field perpendicular on
the surface of the ring. The Coulomb effects are fully in-
cluded in the calculation via the "exact diagonalization"
method. We obtained inhomogeneous charge densities,
or CDD's, around the ring due to the combined effect of
the two types of SOI. When the Coulomb interaction is
included the charge deformation is amplified for N = 2,
as also shown by other authors.9,10 For N > 2 we find
that the CDD is dramatically flattened out in the pres-
ence of the Coulomb interaction. We interpret the result
as a screening effect. On the contrary, the spin inhomo-
geneities, or SDD's, are amplified by Coulomb effects for
all N > 1.
2
(a) N=2 tC=0
GS
ES1
ES2
2
(b) N=2 tC=2.2
1
1
0
0
0
1
x
z
∆
0
2
1
0
2
1
0
0 2 4 6 8 10 0 2 4 6 8 10
(c) N=3 tC=0
0
2
0 2 4 6 8 10 0 2 4 6 8 10
(d) N=3 tC=2.2
1
0 2 4 6 8 10 0 2 4 6 8 10
(e) N=4 tC=0
0
2
0 2 4 6 8 10 0 2 4 6 8 10
(f) N=4 tC=2.2
1
0 2 4 6 8 10 0 2 4 6 8 10
tB
0
0 2 4 6 8 10 0 2 4 6 8 10
tB
FIG. 6: (Color online) The standard deviation ∆z of the spin
projection along the z direction on the circle k = 6 around
the ring, as a measure of the amplitude of the spin-density
wave. Like in the previous figures GS, ES1, and ES2 in the
legend indicate the ground state, the 1-st excited states, and
the 2-nd excited states, respectively. The results are shown for
N = 2, 3, 4 electrons without (tC = 0), and with interaction
(tC = 2.2). Unlike the CDD's, the SDD's are amplified by
the Coulomb interactions for all N . The magnetic energy tB
varies between 0 and 10 and the lines corresponding to the
excited states are shifted to the right, for clarity.
(a)
(b)
y
t
i
s
n
e
d
e
g
r
a
h
C
-1.0 -0.5 0.0
x/Rext
0.5
1.0
1.0
0.5
y/Rext
-1.0
0.0
-0.5
FIG. 7: (Color online) (a) The charge density for N = 4
electrons with interaction (tC = 2.2), in the second excited
state, i. e. ES2 in Fig.5(f), with magnetic energy energy tB =
4.5. (b) The corresponding total spin distribution along the
ring k = 6 where the standard deviation of the z component
is calculated and shown in Fig.6(f).
Acknowledgments
This work was supported by the Icelandic Research
Fund. Valuable discussions with Sigurdur Erlingsson,
Gunnar Thorgilsson, and Marian Nit¸a are cordially ac-
knowledged.
1 S. Datta and B. Das, Appl. Phys. Lett. 56 (1990).
2 Y. Bychkov and E. I. Rashba, JETP Lett. 39, 78 (1984).
3 G. Dresselhaus, Phys. Rev. 100, 580 (1955).
4 R. Winkler, Spin orbit coupling effects in two-dimensional
electron and hole systems (Springer-Verlag Berlin, Heidel-
berg, New York, 2003).
5 T. Ihn, Semiconductor nanostructures. Quantum states
and electronic transport (Oxford University Press, 2010).
6 J. Splettstoesser, M. Governale, and U. Zulicke, Phys. Rev.
B 68, 165341 (2003).
12 The
first
and
function
second
f (x),
generic
f ′(x)
[f (x + h) + f (x − h) − 2f (x)] /h2,
h is considered sufficiently small.
≈
are
[f (x + h) − f (x − h)] /h and
7
any
as
≈
derivatives
of
approximated
f ′′(x)
respectively, where
13 P. Hawrylak and D. Pfannkuche, Phys. Rev. Lett. 70, 485
(1993).
14 N. T. T. Nguyen and F. M. Peeters, Phys. Rev. B 83,
7 S. Souma and B. K. Nikoli´c, Phys. Rev. B 70, 195346
075419 (2011).
(2004).
8 J. S. Sheng and K. Chang, Phys. Rev. B 74, 235315 (2006).
9 Y. Liu, F. Cheng, X. J. Li, F. M. Peeters, and K. Chang,
15 N. T. T. Nguyen and F. M. Peeters, Phys. Rev. B 78,
045321 (2008).
16 D. Pfannkuche, V. Gudmundsson, and P. Maksym, Phys.
Phys. Rev. B 82, 045312 (2010).
Rev. B 47, 2244 (1993).
10 M. P. Nowak and B. Szafran, Phys. Rev. B 80, 195319
17 J. Schliemann, J. C. Egues, and D. Loss, Phys. Rev. Lett.
(2009).
11 F. E. Meijer, A. F. Morpurgo, and T. M. Klapwijk, Phys.
Rev. B 66, 033107 (2002).
90, 146801 (2003).
|
1601.07524 | 2 | 1601 | 2016-06-14T11:58:55 | Surface plasmon polaritons in topological Weyl semimetals | [
"cond-mat.mes-hall",
"cond-mat.str-el"
] | We consider theoretically surface plasmon polaritons in Weyl semimetals. These materials contain pairs of band touching points - Weyl nodes - with a chiral topological charge, which induces an optical anisotropy and anomalous transport through the chiral anomaly. We show that these effects, which are not present in ordinary metals, have a direct fundamental manifestation in the surface plasmon dispersion. The retarded Weyl surface plasmon dispersion depends on the separation of the Weyl nodes in energy and momentum space. For Weyl semimetals with broken time-reversal symmetry, the distance between the nodes acts as an effective applied magnetic field in momentum space, and the Weyl surface plasmon polariton dispersion is strikingly similar to magnetoplasmons in ordinary metals. In particular, this implies the existence of nonreciprocal surface modes. In addition, we obtain the nonretarded Weyl magnetoplasmon modes, which acquire an additional longitudinal magnetic-field dependence. These predicted surface plasmon results are observable manifestations of the chiral anomaly in Weyl semimetals and might have technological applications. | cond-mat.mes-hall | cond-mat | a
Surface plasmon polaritons in topological Weyl semimetals
Johannes Hofmann1, 2 and Sankar Das Sarma1
1Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics,
University of Maryland, College Park, Maryland 20742-4111 USA
2T.C.M. Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(Dated: June 15, 2016)
We consider theoretically surface plasmon polaritons in Weyl semimetals. These materials contain
pairs of band touching points – Weyl nodes – with a chiral topological charge, which induces an
optical anisotropy and anomalous transport through the chiral anomaly. We show that these effects,
which are not present in ordinary metals, have a direct fundamental manifestation in the surface
plasmon dispersion. The retarded Weyl surface plasmon dispersion depends on the separation of
the Weyl nodes in energy and momentum space. For Weyl semimetals with broken time-reversal
symmetry, the distance between the nodes acts as an effective applied magnetic field in momentum
space, and the Weyl surface plasmon polariton dispersion is strikingly similar to magnetoplasmons
in ordinary metals.
In
addition, we obtain the nonretarded Weyl magnetoplasmon modes, which acquire an additional
longitudinal magnetic-field dependence. These predicted surface plasmon results are observable
manifestations of the chiral anomaly in Weyl semimetals and might have technological applications.
In particular, this implies the existence of nonreciprocal surface modes.
PACS numbers: 73.20.Mf, 78.68.+m, 71.20.Gj, 03.65.Vf
Surface plasmon polaritons (SPPs) are collective elec-
tromagnetic and electron-charge excitations that are con-
fined to the surface of a metal or semiconductor. They
were proposed in the 1950's [1, 2] and have been ob-
served via electron energy loss spectroscopy [3, 4] as well
as optically via surface gratings [5] or attenuated total
reflection [6]. Over the past decades, SPPs have found
widespread technological applications, for example,
in
surface microscopy [7], for biomolecular detection [8],
or lithography [9]. Because SPPs are focused to sizes
smaller than the wavelength of light, they hold promise
to realize miniaturized plasmon-based optoelectronic de-
vices, and research in creating such plasmonic devices
is flourishing [10], with the subject being dubbed "plas-
monics" or "nano plasmonics," which is a huge applied
physics field in its own right.
In this Rapid Communication, we add a fundamen-
tal physical aspect to the study of SPPs (and the field
of plasmonics), and demonstrate that the surface plas-
mon polaritons of recently discovered Weyl semimetals
(WSMs), which possess topological properties, show a
much richer (and unanticipated) structure compared to
standard SPPs in ordinary metals and semiconductors.
We find that due to the quantum anomalous electrody-
namic response of the WSM (which is their hallmark),
the retarded Weyl surface plasmon is strongly sensitive
to details of the band structure. In particular, we find
a geometry in which the SPP is nonreciprocal (i.e., the
propagation is unidirectional), even without an applied
external magnetic field. In addition, we show that the
magnetoplasmon mode displays an additional longitudi-
nal field dependence which is absent in ordinary metals.
This can serve as a direct signature of Weyl semimetals in
surface measurements. We note that the SPP physics in-
troduced in this work applies to extrinsic or doped WSM
materials with no requirement of fine-tuning the chem-
ical potential to the band touching points, making our
predictions easy to test experimentally.
An important aspect of SPPs for technological appli-
cations is their nonreciprocity, i.e., the SPPs can only
propagate in one direction [10].
In conventional met-
als, nonreciprocal modes are only possible by breaking
time-reversal symmetry in an applied external magnetic
field [49, 52]. This comes with great technological chal-
lenges since for a sizable nonreciprocity, these magnetic
fields have to be very large [10]. In this Rapid Commu-
nication, we report nonreciprocal SPPs in the pristine
WSMs that are induced by topological Weyl node sepa-
ration without any external magnetic field. This provides
an alternative route to nonreciprocal modes and could
point to interesting technological applications of WSMs
in nanoplasmonics.
Weyl semimetals contain a valence and conduction
band that touch in isolated points of the Brillouin zone
near the chemical potential µ. The minimal Hamiltonian
in the vicinity of such a Weyl node is [11, 12]
H = χvp · σ − µ,
(1)
where χ = ± is the chirality, v the Fermi velocity, p
the momentum, and σ are Pauli matrices. We consider
the generic case of an extrinsic (doped) semimetal with
positive chemical potential µ > 0 (the "Weyl metal,"
although we continue referring to them as WSM). The
spectrum of the Hamiltonian (1) is linear with disper-
sion εp = ±vp. Weyl nodes appear in pairs of oppo-
site chirality [13–15], and they can be separated by a
wave vector b in the first Brillouin zone or by an en-
ergy offset b0 in energy. The topological properties of a
Weyl semimetal are manifested in the form of a θ-term
contribution to the action Sθ = e2
4πc
(cid:82) dt(cid:82) d3r θ E · B
with θ = 2(b · r − b0t) [16–19], where e is the electron
charge, E the electric field and B the magnetic field. If
the bands are degenerate with b0 = b = 0 (the so-called
Dirac semimetal), the system does not possess topologi-
cal properties. The θ term changes the electromagnetic
response of the material in the bulk medium by altering
the constitutive relation that links the displacement field
and the electric field [20–26], which in frequency space
reads
ε∞ +
4πi
ω
σ
E +
ie2
πω
(∇θ) × E +
ie2
πcω
θ B, (2)
(cid:18)
D =
(cid:19)
where ε∞ is the static dielectric constant of the medium
and σ the conductivity. The first term in parentheses
is the standard term as in normal metals, and the last
two terms arise due to the chiral anomaly. The gradi-
ent term in θ describes the contribution of an anoma-
lous Hall current, and the last time-derivative term de-
scribes the chiral magnetic effect [19]. Weyl semimetals
have recently been reported for TaAs [27, 28], NbAs [29],
YbMnBi2 [30], and Eu2Ir2O7 [31]. In addition, semimet-
als with degenerate bands (Dirac semimetals) are re-
ported for Cd3As2 [32–34], ZrTe5 [35], and Na3Bi [36].
They are parent materials from which nontrivial topo-
logical behavior is induced by symmetry breaking, for
example, by applying an external magnetic field [35, 37–
39]. These experimental results, which do not necessar-
ily have an exclusive interpretation in terms of the chiral
anomaly [39], motivate the search for direct signatures
of Weyl semimetals that are of topological origin, i.e.,
effects that are not explained by the linear semimetal-
lic Dirac dispersion and hence are not found in Dirac
semimetals or small-gap semiconductors. We establish
that SPP carry distinctive observable features in Weyl
systems arising purely from their topological properties.
Here, we show that the topological properties of Weyl
semimetals affect the surface plasmon polariton disper-
sion. There are two main results of this work: First,
because a WSM is an optically anisotropic medium, the
surface plasmon dispersion depends on the Weyl node
separation. The effect is strongest in the retarded limit
(i.e., small wave vector), where the magnitude of the wave
vector is comparable to the bulk plasmon frequency (di-
vided by c, the velocity of light). We find that for a time-
reversal broken WSM without external magnetic field,
the SPP dispersion resembles retarded magnetoplasmon
modes in standard metals. In particular, for certain ori-
entations of the surface, we predict a nonreciprocal dis-
persion, i.e., a dispersion that depends on the sign of
the wave vector. As the second main result of this work,
we predict that the Weyl surface magnetoplasmon modes
possess an anomalous longitudinal magnetic field depen-
dence that is absent for standard metals. This effect is
caused by the anomalous magnetic field dependence of
the WSM longitudinal conductivity ("negative magne-
toresistance") [25, 40, 41], a direct consequence of the
2
chiral anomaly. In the remainder of this Rapid Commu-
nication, we derive both effects and discuss their exper-
imental implications. All the algebraic details are pro-
vided in the Supplemental Material.
Surface plasmon polaritons are solutions of Maxwell's
equations localized at the interface of two media. We con-
sider the following geometry: A Weyl semimetal fills the
positive half volume z > 0, and a vacuum for z < 0. The
WSM-vacuum interface lies in the xy plane. For simplic-
ity, we restrict the analysis to a single pair of Weyl nodes
(although our results are obviously valid for WSM with
arbitrary pairs of nodes). Since we have translational in-
variance along the interface, the SSP are parametrized
by the parallel wave vector q = (qx, qy). We search for
electric fields of the form
y, Ej
z)eiqxx+iqyye−iωte−κjz,
Ej = (Ej
x, Ej
(3)
which decay exponentially away from the boundary, i.e.,
for which Re κ > 0, and we label j = 0 on the vacuum
side and j > 0 enumerates the solutions in the WSM.
The decay constants κj are determined from a solution
of the wave equation
∇ × (∇ × E) = − 1
c2
∂2
∂t2 D,
(4)
z = D2
z and B1
z = B2
x/y = E2
x/y = B2
x/y and B1
iω∇ × E). Substituting the ansatz (3) in Eq. (4),
where on the vacuum side, we have D = E, and for the
WSM, D is given by Eq. (2) (the magnetic field in this
expression is related to the electric field by Faraday's law
B = c
we obtain a linear system of equations. The zeros of the
determinant of this system yield κj. In general, on the
WSM side, it turns out that there are two solutions of
Eq. (4) with exponentially decaying field. We demand
the continuity of the parallel components of electric and
magnetic fields (E1
x/y) and of
the perpendicular components of the displacement fields
(D1
z ). This gives four linearly inde-
pendent conditions that determine the surface plasmon
dispersion as well as the relative magnitude of the fields.
In the following, we assume that the dielectric ten-
sor does not depend on the wavelength or the posi-
tion inside the WSM. This approximation applies if the
inverse wave vector of the SPP is large compared to
the Thomas-Fermi length, which in a WSM is propor-
tional to the inverse Fermi wave vector [42, 43]. In this
case, the diagonal component of the dielectric tensor is
ε1(ω) = ε∞(1 − Ω2
3π ( µ )2 denotes the
bulk plasmon frequency [44–46] with α = e2/vε∞ being
the finestructure constant of the WSM.
ω2 ), where Ω2
p = 4α
p
We first discuss the results for the SPP of a Dirac
semimetal (for which b = 0 and b0 = 0). The SPP
solves
with κ0 = (cid:112)q2 − ω2/c2. This coincides with the con-
ε1(ω) + κ0 = 0,
(5)
ventional SPP condition in standard metals [1, 47]. The
3
FIG. 1. Surface plasmon dispersion of a Weyl semimetal with broken time-reversal symmetry for different values of (top to
bottom) (a) ωb/Ωp = 0.25, 0.5, 0.75, and 1; (b) 0.5, 1, and 1.5; and (c) 0.5. In (c), the continuous blue line denotes positive
wave numbers q > 0 and the dotted blue line q < 0. In all plots, the bulk plasmon dispersion is indicated by thin red lines.
The thin black lines denote the asymptotic light line and the nonretarded frequency, respectively, and the black dashed line
indicates the SPP dispersion of a standard Dirac material. As discussed in the main text, the black dots mark the points where
the SPP hybridizes with the bulk plasmon mode and is damped.
ω =(cid:112)ε∞/(ε∞ + 1)Ωp (horizontal thin black line), which
surface plasmon dispersion is indicated by a thick black
dashed line in Figs. 1 (a)-(c).
In the fully retarded
limit cq (cid:28) Ωp, the SPP follows the light-line ω = cq
[thin black line in Figs. 1(a)-1(c)] and turns over in
the hydrodynamic limit cq (cid:29) Ωp to a constant value
solves ε1(ω) = −1. In particular, for ε∞ = 1, this coin-
√
2 [1].
cides with the famous result by Ritchie, ω = Ωp/
However, these surface plasmon modes are different from
ordinary metals since they are purely quantum with
p ∼ αn2/3 ∼ n2/3/. Fur-
appearing explicitly [48]: Ω2
thermore, they show a sub-linear density dependence as
opposed to a linear density-dependence for Ω2
p in ordi-
nary metals. Electron interactions can introduce a loga-
rithmic correction to this scaling through charge renor-
malization [45]. We predict that the linear dispersion of a
Dirac semimetal is manifested in a nonlinear dependence
of the squared SPP mode frequency on doping density.
Note that the characteristic scaling behavior may not
only be probed by varying the doping density but also
by finite-temperature measurements [31, 45].
We now present results for WSMs with broken time-
reversal symmetry (b (cid:54)= 0) and broken parity (b0 (cid:54)= 0)
for ε∞ = 13 as measured in Eu2Ir2O7 [31]. The results
are shown in Fig. 1 for three relevant configurations: (a)
b perpendicular to the sample surface, where the surface
plasmon dispersion depends only on the magnitude of the
parallel wave vector q; (b) b parallel to the surface with
q parallel to b; and (c) b parallel to the surface with q
perpendicular to b. The chiral anomaly induces an off-
diagonal term in the dielectric tensor iε2(ω) = iε∞ωb/ω
with ωb = 2e2b/πε∞. All the analytical calculational
details are provided in the Supplemental Material. Fig-
ure 1 (a) shows the SPP mode as a function of wave vec-
tor for four values of ωb/Ωp = 0.5, 1, 1.5, and 2. The SPP
deviates from the Dirac semimetal result (black dashed
line) for intermediate wave vectors cq ∼ Ωp and departs
from the light line at smaller wave number and energy.
For comparison, we include as thin red lines the corre-
sponding bulk plasmon modes for which one of the decay
constants vanishes κ = 0 and the plasmon is no longer
confined to the surface. As is evident from the plots,
for some wave vectors, bulk and surface modes are de-
generate, while in other regions (marked by black end
points), the SPP vanishes. Here, a generalized SPP still
exists, but with a complex wave vector q, indicating a
coupling of surface and bulk modes [49]. It is interesting
to note that the geometry [Fig. 1(a)] shows signs of the
chiral anomaly, even though another characteristic signa-
ture of WSM – topological Fermi arc surface states – are
absent in this configuration. Similar features are seen
in Fig. 1(b), which is shown for three different values
ωb/Ωp = 0.5, 1, and 1.5. Both cases shown in Figs. 1(a)
and 1(b) are reciprocal, i.e., the dispersion is indepen-
dent of the sign of q. In case (c), however, the SPP dis-
persion is nonreciprocal. For positive q > 0 (blue dotted
line), there is a transition from the light line to an asymp-
totic nonretarded constant frequency. For negative q < 0,
the dispersion has a discontinuity as it merges with the
bulk plasmon mode, at which point it jumps to a higher
frequency. In particular, there exists a frequency range
where the system supports only modes with q < 0. The
nonreciprocity that we report could have interesting tech-
nological applications [50]. While nonreciprocal SSP in
normal metals require magnetic fields or impurities [51],
nonreciprocity is a fundamental intrinsic material prop-
erty of a WSM arising from its topological nature.
Strikingly, the SPP with b (cid:54)= 0 resemble, on a qual-
itative level, SPP of an ordinary metal in the presence
of an external magnetic field [49, 52, 53], even though
they have quite a different origin. Hence, the topolog-
ical contribution to the dielectric tensor, which stems
from an anomalous Hall displacement current, induces
an "anomalous surface magnetoplasmon." This is a cen-
tral result of our work.
The retarded SPP dispersion of a WSM with b0 (cid:54)= 0
(and b = 0) is shown in Fig. 2 for ωb0 /Ωp = 0.5. The
dispersion solves
(cid:20)
(cid:21)
(cid:18)
(cid:113) 1
(κ0 + κ1b)
κ1a
×
1b − q2 +
κ2
1a)
ω2
(cid:19)
c2 + κ0(q2 − κ2
ω2
c2 ε1
+ (κ1a ↔ κ1b) = 0,
(6)
2
ω2
ω4
c4 ε2
4 ω8ε4
2 + c2ω6ε1ε2
c4
/ω2, with ω2
b0
2 −
where the decay constants are κ1a/b = q2 − 1
c2 ε1± 1
2 and ε2 = 2e2b0Ωp/πcω2 =
= 2e2b0Ωp/πcε∞. There is no de-
ε∞ω2
b0
pendence on the direction of the parallel wave number
q. In addition to the changed SPP dispersion, another
observable effect would be a tilt of the field polarization
out of the sagittal plane, as suggested for 3D topological
insulators [54].
We now consider WSM surface magnetoplasmon
modes, which turn out to have an unusual magnetic field
dependence. As this effect is distinct from the zero-field
anomalous SPP discussed so far, we restrict our atten-
tion to the nonretarded limit and neglect corrections due
to the separation of the Weyl nodes. The dielectric ten-
sor takes the form ε1(ω) = ε∞ + 4πi
ω σ. The conductiv-
ity can be derived in a semiclassical framework, in which
the Berry curvature modifies the semiclassical equation of
motion [25, 40, 41, 55, 56]. In particular, the Berry curva-
ture induces a longitudinal magnetoconductivity [40, 41]
(cid:18)
(cid:19)
α
π
ω2
c
Ω2
p
σ(cid:107)(ω) =
iΩ2
p
4πω
1 +
,
(7)
pωc/4π(ω2 − ω2
whereas in an ordinary metal, there is only the first
Drude term and no dependence on the magnetic field.
Here, ωc = ev2B/µc denotes the cyclotron frequency and
Eq. (7) holds for frequencies ω (cid:29) τ−1, where τ is the
inelastic intranode scattering time [40]. Note that the
relative strength of the Drude and the anomalous term
depends on the magnetic field and the doping density.
The remaining components of the conductivity tensor
pω/4π(ω2 − ω2
take the standard Drude form σ⊥ = iΩ2
c )
and σxy = Ω2
c ), provided that Berry cur-
vature corrections to the density of states and the in-
trinsic orbital moment are neglected [25].
In the non-
retarded limit, the electric field is given by E = −∇φ,
where the electrostatic potential solves Poisson's equa-
tion ∇2φ = 4πρ and ρ is the induced charge density. On
the vacuum side, the potential solves ∇2φ = 0. Combin-
ing Poisson's equation with the current and the continu-
ity equation, we obtain (setting ε∞ = 1)
∇ · (σ∇φ) = 0.
∇2φ +
(8)
4πi
ω
4
FIG. 2. Surface plasmon dispersion of a Weyl semimetal with
broken inversion symmetry for ωb0 /Ωp = 0.5, and 1. The
notation is the same as in Fig. 1.
We make the ansatz φ = φieiqxx+iqyye−iωte−κjz and
impose the continuity of φ at the boundary. Integrating
Eq. (8) across the interface, we find the second boundary
condition
φ(cid:48)(0+) − φ(cid:48)(0−) +
[σ∇φ]z(0+) = 0,
4πi
ω
(9)
where the prime denotes a derivative with respect to z.
These conditions are of course equivalent to demanding
the continuity of the parallel components of E and the
perpendicular component of D.
For a magnetic field parallel to the surface, we obtain
the surface plasmon condition
(cid:16)
(cid:17)
ω2 − (Ω2
p − ω2 + ω2
α
c )
1 +
π
p − ω2) sin2 θ = 0,
−2ωωc sin θ − (Ω2
cos2 θ
ω2
c
Ω2
p
(10)
where θ is the relative angle between the magnetic field
and the parallel momentum q. The term proportional to
sin θ implies that the surface magnetoplasmon is non-
reciprocal,
i.e., the frequency depends on the sign of
qy. For a dispersion perpendicular to the magnetic field
(cos θ = 0), we find ω2 − ωωcsgn(q) − Ω2
p/2 = 0, which
is the same form as in ordinary metals [57]. There is a
modification of the plasmon dispersion for modes that
propagate along the magnetic field (sin θ = 0), for which
we find
(cid:0)Ω2
p + ω2
c
(cid:1).
ω2 =
1 + α
π
2 + α
π
ω2
c
Ω2
p
ω2
c
Ω2
p
(11)
The anomalous correction to σ(cid:107) changes the magnetic
field dependence of the plasmon frequency. Compar-
ing with the standard surface plasmon relation ω2 =
ε∞/(ε∞ +1)Ω2
p, we interpret the correction as an anoma-
lous contribution to the dielectric constant of the medium
p ∼ B2n−4/3, which acquires a magnetic
∆ε∞ = αω2
field dependence. If the anomalous term dominates (at
c /πΩ2
small α and doping), the plasmon mode is equal to the
bulk plasmon frequency, ω2 = Ω2
p. For a magnetic field
that is perpendicular to the surface, we obtain the same
anomalous surface plasmon dispersion as in Eq. (11).
In summary, we predict a rich (and experimentally
observable) structure of surface plasmon polaritons in
doped Weyl semimetals. In particular, we show the fol-
lowing: (a) There is a quantum surface plasmon mode
with unusual density dependence; (b) for broken inver-
sion symmetry, the retarded dispersion is strongly af-
fected by the chemical potential imbalance; (c) for bro-
ken time-reversal symmetry, the dispersion depends on
the Weyl node separation, which acts similar to an inter-
nal magnetic field; (d) a nonreciprocal dispersion arises
naturally even without external magnetic fields; and (e)
the magnetoplasmon mode acquires an additional longi-
tudinal magnetic field dependence. These effects are ex-
perimentally observable signatures of the chiral anomaly
in Weyl semimetals and could point the way to future
technological applications of these systems.
This work is supported by LPS-MPO-CMTC, Mi-
crosoft Q, and JQI-NSF-PFC (J.H. and S.D.S.), and
Gonville and Caius College (J.H.).
[1] R. H. Ritchie, Phys. Rev. 106, 874 (1957).
[2] E. A. Stern and R. A. Ferrell, Phys. Rev. 120, 130 (1960).
[3] C. J. Powell and J. B. Swan, Phys. Rev. 115, 869 (1959).
[4] F. J. Garc´ıa de Abajo, Rev. Mod. Phys. 82, 209 (2010).
[5] R. H. Ritchie, E. T. Arakawa, J. J. Cowan, and R. N.
Hamm, Phys. Rev. Lett. 21, 1530 (1968).
[6] N. Marschall, B. Fischer, and H. J. Queisser, Phys. Rev.
Lett. 27, 95 (1971).
[7] B. Rothenhausler and W. Knoll, Nature 332, 615 (1988).
[8] M. Malmqvist, Nature 361, 186 (1993).
[9] W. Srituravanich, N. Fang, C. Sun, Q. Luo, and X. Zhang,
Nano Letters 4, 1085 (2004).
[10] W. L. Barnes, A. Dereux, and T. W. Ebbesen, Nature
424, 824 (2003).
[11] O. Vafek and A. Vishwanath, Annual Review of Con-
densed Matter Physics 5, 83 (2014).
[12] T. Wehling, A. Black-Schaffer,
and A. Balatsky, Ad-
vances in Physics 63, 1 (2014).
[13] H. Nielsen and M. Ninomiya, Nuclear Physics B 185, 20
(1981).
[14] H. Nielsen and M. Ninomiya, Nuclear Physics B 193, 173
(1981).
5
[22] P. Hosur and X.-L. Qi, Phys. Rev. B 91, 081106 (2015).
[23] M. Kargarian, M. Randeria, and N. Trivedi, Scientific
Reports 5, 12683 EP (2015).
[24] A. A. Zyuzin and V. A. Zyuzin, Phys. Rev. B 92, 115310
(2015).
[25] F. M. D. Pellegrino, M. I. Katsnelson, and M. Polini,
Phys. Rev. B 92, 201407 (2015).
[26] P. Goswami, G. Sharma, and S. Tewari, Phys. Rev. B
92, 161110 (2015).
[27] S.-Y. Xu,
I. Belopolski, N. Alidoust, M. Neupane,
G. Bian, C. Zhang, R. Sankar, G. Chang, Z. Yuan, C.-
C. Lee, S.-M. Huang, H. Zheng, J. Ma, D. S. Sanchez,
B. Wang, A. Bansil, F. Chou, P. P. Shibayev, H. Lin,
S. Jia, and M. Z. Hasan, Science 349, 613 (2015).
[28] B. Q. Lv, H. M. Weng, B. B. Fu, X. P. Wang, H. Miao,
J. Ma, P. Richard, X. C. Huang, L. X. Zhao, G. F. Chen,
Z. Fang, X. Dai, T. Qian, and H. Ding, Phys. Rev. X 5,
031013 (2015).
[29] S.-Y. Xu, N. Alidoust, I. Belopolski, Z. Yuan, G. Bian,
T.-R. Chang, H. Zheng, V. N. Strocov, D. S. Sanchez,
G. Chang, C. Zhang, D. Mou, Y. Wu, L. Huang, C.-C. Lee,
S.-M. Huang, B. Wang, A. Bansil, H.-T. Jeng, T. Neupert,
A. Kaminski, H. Lin, S. Jia, and M. Zahid Hasan, Nat
Phys 11, 748 (2015).
[30] S. Borisenko, D. Evtushinsky, Q. Gibson, A. Yaresko,
T. Kim, M. N. Ali, B. Buechner, M. Hoesch, and R. J.
Cava, arXiv:1507.04847 (2015).
[31] A. B. Sushkov, J. B. Hofmann, G. S. Jenkins, J. Ishikawa,
S. Nakatsuji, S. Das Sarma, and H. D. Drew, Phys. Rev.
B 92, 241108 (2015).
[32] S. Borisenko, Q. Gibson, D. Evtushinsky, V. Zabolotnyy,
B. Buchner, and R. J. Cava, Phys. Rev. Lett. 113, 027603
(2014).
[33] T. Liang, Q. Gibson, M. N. Ali, M. Liu, R. J. Cava, and
N. P. Ong, Nat Mater 14, 280 (2015).
[34] M. Neupane, S.-Y. Xu, R. Sankar, N. Alidoust, G. Bian,
C. Liu, I. Belopolski, T.-R. Chang, H.-T. Jeng, H. Lin,
A. Bansil, F. Chou, and M. Z. Hasan, Nat Commun 5,
3786 (2014).
[35] Q. Li, D. E. Kharzeev, C. Zhang, Y. Huang, I. Pletikosic,
A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D. Gu,
and T. Valla, arXiv:1412.6543 (2014).
[36] Z. K. Liu, B. Zhou, Y. Zhang, Z. J. Wang, H. M. Weng,
D. Prabhakaran, S.-K. Mo, Z. X. Shen, Z. Fang, X. Dai,
Z. Hussain, and Y. L. Chen, Science 343, 864 (2014).
[37] H.-J. Kim, K.-S. Kim, J.-F. Wang, M. Sasaki, N. Satoh,
A. Ohnishi, M. Kitaura, M. Yang, and L. Li, Phys. Rev.
Lett. 111, 246603 (2013).
[38] J. Xiong, S. K. Kushwaha, T. Liang, J. W. Krizan,
W. Wang, R. J. Cava, and N. P. Ong, arXiv:1503.08179
(2015).
[39] P. Goswami, J. H. Pixley, and S. Das Sarma, Phys. Rev.
B 92, 075205 (2015).
[15] H. Nielsen and M. Ninomiya, Physics Letters B 130, 389
[40] D. T. Son and B. Z. Spivak, Phys. Rev. B 88, 104412
(1983).
(2013).
[16] K. Fujikawa, Phys. Rev. Lett. 42, 1195 (1979).
[17] A. A. Zyuzin and A. A. Burkov, Phys. Rev. B 86, 115133
[41] B. Z. Spivak and A. V. Andreev, arXiv:1510.01817
(2015).
(2012).
[42] S. Das Sarma, E. H. Hwang, and H. Min, Phys. Rev. B
[18] P. Goswami and S. Tewari, Phys. Rev. B 88, 245107
91, 035201 (2015).
(2013).
[19] P. Hosur and X. Qi, Comptes Rendus Physique 14, 857
(2013).
[20] F. Wilczek, Phys. Rev. Lett. 58, 1799 (1987).
[21] A. G. Grushin, Phys. Rev. D 86, 045001 (2012).
[43] S. Li and A. V. Andreev, Phys. Rev. B 92, 201107 (2015).
[44] M. Lv and S.-C. Zhang, International Journal of Modern
Physics B 27, 1350177 (2013).
[45] J. Hofmann and S. Das Sarma, Phys. Rev. B 91, 241108
(2015).
[46] J. Zhou, H.-R. Chang, and D. Xiao, Phys. Rev. B 91,
tions 14, 1223 (1974).
035114 (2015).
[47] J. M. Pitarke, V. M. Silkin, E. V. Chulkov, and P. M.
Echenique, Reports on Progress in Physics 70, 1 (2007).
[48] S. Das Sarma and E. H. Hwang, Phys. Rev. Lett. 102,
[52] K. Chiu and J. Quinn, Il Nuovo Cimento B 10, 1 (1972).
[53] M. S. Kushwaha, Surface Science Reports 41, 1 (2001).
[54] A. Karch, Phys. Rev. B 83, 245432 (2011).
[55] D. Xiao, M.-C. Chang, and Q. Niu, Rev. Mod. Phys. 82,
206412 (2009).
1959 (2010).
[49] R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein,
[56] R. Lundgren, P. Laurell, and G. A. Fiete, Phys. Rev. B
Phys. Rev. B 9, 3424 (1974).
90, 165115 (2014).
[50] R. Camley, Surface Science Reports 7, 103 (1987).
[51] A. Hartstein and E. Burstein, Solid State Communica-
[57] A. L. Fetter, Phys. Rev. B 32, 7676 (1985).
6
Supplemental Material: Surface plasmon polaritons in topological Weyl semimetals
1Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland,
2T.C.M. Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
College Park, Maryland 20742-4111 USA
Johannes Hofmann1,2 and Sankar Das Sarma1
1
In this supplemental material, we provide details on the calculation of the retarded surface plasmon polariton
dispersion. The interface between the vacuum and the Weyl semimetal (WSM) is in the x-y plane at z = 0, with the
vacuum for z < 0 and the WSM for z > 0. The evanescent ansatz (3) for the electric field at the boundary solves the
wave equation (4), where the displacement field D is related to the electric field E through the dielectric tensor ε(ω),
Eq. (2). Hence, the electric field solves a homogeneous equation M E = 0, where
q2
M =
y − κ2
−qxqy
∓iqxκj ∓iqyκj q2
j −qxqy ∓iqxκj
j ∓iqyκj
x + q2
y
x − κ2
q2
− ω2
c2 ε(ω),
(S1)
M =
−κ2
with the positive sign on the vacuum side and negative on the WSM side. The zeros of the determinant of M
determine the decay constant κj. On the vacuum side (j = 0), we find κ2
c2 for any orientation of q. On the
WSM side (j = 1), we have for the various geometries shown in Fig. 1:
0 = q2 − ω2
Case (a): b = (0, 0, b), q = (0, q, 0)
q2 − κ2
1 − ω2
iω2
c2 ε2(ω)
c2 ε1
0
−κ2
− iω2
c2 ε2
1 − ω2
−iqκ1
0
c2 ε1 −iqκ1
q2 − ω2
c2 ε1
,
1 = q2 − ω2
κ2
c2 ε1 ± 1
ε1
(cid:114)
− ω2
c2 ε2
2
(cid:16)
q2 − ω2
c2 ε1
(cid:17)
(S2)
Case (b): b = (b, 0, 0), q = (q, 0, 0)
M =
c2 ε1
1 − ω2
0
−iqκ1
0
q2 − κ2
1 − ω2
iω2
c2 ε2
−iqκ1
c2 ε1 − iω2
c2 ε2
q2 − ω2
c2 ε1
,
κ2
1 = q2 +
(cid:19)
− ε1
± 1
2ε1
(cid:114)
4q2 ω2
c2 ε1ε2
2 +
ω4
c4 ε4
2
(S3)
Case (c): b = (b, 0, 0), q = (0, q, 0)
1 − ω2
0
0
q2 − κ2
M =
c2 ε1
c2 ε1 −iqκ1 − iω2
q2 − ω2
c2 ε2
c2 ε1
where we define as in the main text ε1(ω) = ε∞(1− Ω2
ω2 ) and ε2(ω) = ε∞ωb/ω with ωb = 2e2b/πε∞. In Eqs. (S2)-(S4),
we also note the results for the decay constant κ1 on the WSM side. For b0 (cid:54)= 0 and q = (q, 0, 0) as shown in Fig. 2,
we have
κ2
1 = q2 +
c2 ε2
(S4)
2
ε1
,
p
− ε1
ω2
c2
0
−κ2
1 − ω2
−iqκ1 + iω2
0
(cid:18) ε2
(cid:19)
ω2
c2
2
2ε1
(cid:18) ε2
,
−κ2
M =
c2 ε1(ω)
1 − ω2
− cκ1
ε2
− icq
ε2
Ωp
Ωp
q2 − κ2
cκ1
Ωp
ε2
1 − ω2
c2 ε1(ω)
iω2
c2 ε2(ω)
−iqκ1
ε2
q2 − ω2
icq
Ωp
c2 ε1(ω)
1 = q2 − ω2
κ2
c2 ε1 − ω4
2c4 ε2
2 +
1
2
,
(cid:114)
ω8
c8 ε4
2 + 4
ω6
c6 ε1ε2
2,
(S5)
/ω2 with ω2
b0
= 2e2b0Ωp/πcε∞. There are, in general, two linearly independent
where we define ε2(ω) = ε∞ω2
b0
solutions for E on the vacuum and on the WSM side which correspond to modes that are localized at the interface. We
impose as a boundary condition the continuity of the parallel component of the electric field E and the perpendicular
component of the displacement field Dz as well as the continuity of the magnetic field B = c
set of four linearly independent constraints. Setting the determinant of this constraint matrix equal to zero, we find
the SPP condition for the various cases:
iω∇ × E. This gives a
(cid:18)
1a+κ1aκ1b+κ2
(cid:3)− ω2
1b)1+q2(cid:2)κ0(1−1)+(κ1a+κ1b)1
1b)1
c2 1
(κ1a+κ1b)(κ0+κ1a+κ1b+q2(1−1)
(cid:18)
κ1a+κ1b+κ0(1−1)
(cid:19)
(cid:3)− ω2
c2 1
= 0. (S7)
2
(cid:19)
= 0.
(S6)
Case (a):
1κ0κ1aκ1b(κ1a+κ1b)+q2(cid:2)κ1aκ1b+κ0(κ1a+κ1b)+(κ2
Case (b):
κ1aκ1b(κ0+κ1a+κ1b)+κ0(κ2
1a+κ1aκ1b+κ2
Case (c):
ε1κ1 + κ0(ε2
(S8)
Here, we denote by κ1a and κ1b the two solutions corresponding to ± in Eqs. (S2)-(S4). For b0 (cid:54)= 0, the condition
is stated in Eq. (6) of the main text. In the case b (cid:54)= 0, the result is similar as for the as for a metal in a constant
external magnetic field [S1, S2], and the SPP conditions agree when correcting for the difference in the dielectric
tensor. The explicit form of the dielectric components in a WSM is, of course, different from the Drude form in an
external magnetic field.
1 − ε2
2) − qε2 = 0.
[S1] K. Chiu and J. Quinn, Il Nuovo Cimento B 10, 1 (1972).
[S2] R. F. Wallis, J. J. Brion, E. Burstein, and A. Hartstein, Phys. Rev. B 9, 3424 (1974).
|
1208.0548 | 1 | 1208 | 2012-08-02T17:17:47 | Probing a Single Nuclear Spin in a Silicon Single Electron Transistor | [
"cond-mat.mes-hall"
] | We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of $100 mK$, $dI/dV$ curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias. | cond-mat.mes-hall | cond-mat |
Probing a Single Nuclear Spin in a Silicon Single Electron Transistor
F. Delgado(1), R. Aguado(2), and J. Fern´andez-Rossier(1,3)1
(1) International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jos´e Veiga, 4715-330 Braga,
Portugal
(2) Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049 Madrid,
Spain
(3) Departamento de F´ısica Aplicada, Universidad de Alicante, 03690 San Vicente del Raspeig,
Spain
(Dated: 25 June 2018)
We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the
strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device.
In the sequential tunneling regime we find that at, temperatures in the range of 100mK, dI/dV curves reflect
the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium
quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic
spin just tuning the applied bias.
PACS: 73.23.Hk, 31.30.Gs, 74.55.+v, 75.75.-c
The amazing progress both in the silicon process-
ing technologies and in the miniaturization of silicon
based transistors has reached the point where single-
dopant transistors have been demonstrated.1 -- 7 Whereas
this progress has been fueled by the development of clas-
sical computing architectures, it might also be used for
quantum computing. In this regard, the electronic and
nuclear spins of single donors in silicon are very promis-
ing building blocks for quantum computing.8 -- 10 Progress
along this direction makes it necessary to implement sin-
gle spin readout schemes both for electronic and nuclear
spins. Single electronic spin readout has been demon-
strated, both in GaAs quantum dots as well as in P doped
Silicon Nanotransistors.11,12
The readout of the quantum state of a single nuclear
spin, much more challenging, has been demonstrated for
NV centers in diamond taking advantage of single spin
optically detected magnetic resonance afforded by the ex-
traordinary properties of that system.13 Single nuclear
spin readout with either optical14 or a combined electro-
optical techniques15 has been proposed, but remains to
be implemented. Here we explore the electrical readout
of a single nuclear spin, more suitable for an indirect
band-gap host like Si. A preliminary step is to construct
a circuit whose transport is affected by the quantum state
of the nuclear spin. There is ample experimental evidence
of the mutual influence of many nuclear spins and trans-
port electrons in III-V semiconductor quantum dots in
the single electron transport regime.16 -- 19 In particular,
Kobayashi et al. have reported hysteresis in the dI/dV
upon application of magnetic fields, reflecting the real-
ization of different ensemble of nuclear states coupled to
the electronic spin via hyperfine coupling.19
Here we propose a device where a single nuclear spin
is probed in single electron transport. We model the
single electron transport in a silicon nanotransistor such
that, in the active region, transport takes place through
a single Bi dopant, see Fig. 1. We show that, at suffi-
ciently low temperatures, the dI/dV curves of this de-
vice probe the hyperfine structure of the dopant level. In
FIG. 1. (color online) a) Scheme of the Si:Bi FinFET nan-
otransistor. b) Trapping Coulomb potential of the Bi dopant
an single energy level participating in the transport.
turn, the occupations of the nuclear spin states are af-
fected by the transport electrons. Whereas single dopant
transistors have been demonstrated for single P, As and
in Si,3,4,6,12 we choose Bi because it has a much
B,
larger hyperfine splitting,20 -- 22 due to both a larger nu-
clear spin I = 9/2 and a larger hyperfine coupling con-
stant (A ≈ 6.1µeV). The zero-field splitting of the Bi
donor level is given by 5A and has been observed by
electron spin resonance20 -- 22 and in photoluminescence
experiments with many dopants.23
We consider the sequential transport regime, where the
occupation of the donor level fluctuates between q = 0
and q = 1. In the q = 0 state, the nuclear spin interacts
only with the external field.
In the q = 1 state, the
electron and the nuclear spin are hyperfine coupled. The
Hamiltonian that describes both states reads20 -- 22,24
H = q (cid:16)ǫd + eVG + A~S · ~I + ωeSz(cid:17) + ωN Iz,
(1)
where ǫd is the donor energy level with respect to the
Fermi energy, which we take as EF = 0, and VG denotes
an external gate voltage. We assume that valley degen-
eracies of the donor level are split-off and neglect the
valley degree of freedom. The third term is the hyper-
fine coupling, and the last two, where ωe = geµBBz
and ωN = gnµN Bz, correspond to the electron and
nuclear Zeeman terms, with ge (gn) the electron (nu-
2
q = 0 and q = 1 manifolds. The corresponding transition
rates are be calculated using the Fermi golden rule with
Htun as the perturbation:26
0 X
hM Iz(m), σi2 ,
(3)
Γη
m,M = Γη
σ
where Iz, σi ≡ Izi ⊗ σi. In the following we take the
applied bias convention µS − µD = eV , with µS = eV /2
and µD = −eV /2. For a given temperature, bias and
gate voltages and Hamiltonian parameters, we obtain the
steady state solution of the master equation, ignoring the
effect of the fast-decaying coherences. This yields the
steady state occupations Pm(V ) and PM (V ).
We consider the sequential tunneling regime, in which
the energy level broadening induced by coupling to the
electrodes Γ0 is small, Γ0 ≪ kBT . This also justifies the
markovian approximation implicit in the Bloch-Redfield
master equation. In this regime, current flows when the
bias enables charge fluctuations of the dopant level. The
steady state current corresponding to electrons flowing
from the source electrode to the dopant level is given by
I = e X
m,M
nPm(V )fS(∆M,m)ΓS
m,M
−PM (V ) [1 − fS(∆M,m)] ΓS
m,Mo,
(4)
where ∆M,m = ǫM − ǫm and fS(ǫ) = f (ǫ − µS) is the
Fermi function relative to the chemical potential of the S
electrode. The first term in the right hand-side of Eq.(4)
represents the electrons flowing from the S electrode to
the empty Bi, while the second one corresponds to elec-
trons flowing from the q = 1 Bi to the S electrode. In
steady state, the continuity equation ensures that cur-
rent between the dopant and the drain is the same than
the source-dopant current.
Figure 3a) shows the differential conductance dI/dV
map for zero-applied magnetic field, with I = I/(eΓ0)
and Γη
0 = Γ0/2. At zero bias, the conductance is zero
except at the special value of VG for which the addition
energy vanishes. Far from this point, the zero-bias charge
of the dopant state, hereafter denoted with q0, is either
q0 = 0 or q0 = 1. The finite bias conductance has a
peak whenever the bias energy, eV /2, matches the energy
difference between two states with different charge, m for
q = 0 and M for q = 1, that are permitted by the spin
selection rule implicit in Eq.(3). The height of the peak is
proportional to both the non-equilibrium occupations Pm
and PM and to the quantum mechanical matrix element
Γη
m,M . This determines the very different spectra when
the zero bias charge in the dopant is q = 0 or q = 1. The
width of the dI/dV peaks is proportional to kBT , so that
the dI/dV spectra can resolve the hyperfine structure
provided that kBT is smaller than the splitting of the
levels. The energy differences inside the F = 4 and F = 5
manifolds, see Fig. 2), are roughly proportional to A.
Thus, while the zero-field splitting can be resolved at
T = 0.3 K, temperature must be significantly below 50
mK to resolve the finite field structure, see Fig. 3c).
FIG. 2. (color online) Scheme of the current-induced allowed
transition for the a) q = 1 charged system and b) q = 0
uncharged system. It has been assumed that ωN ≪ kBT ≪
ωe . ∆0.
clear) g-factors and µB (µN ) the Bohr (nuclear) mag-
neton. In equilibrium, i.e., at zero bias, the occupation
of the dopant level depends on the value of the addi-
tion energy, which ignoring the Zeeman terms and the
tiny correction due to the hyperfine coupling, is given by
ε0(VG) ≡ ǫd + eVG.
We denote the q = 0 eigenstates as mi. Their energies
read as ǫm ≡ ωN Iz. The eigenenergies and eigenvectors
of q = 1 are denoted by ǫM and M i. The q = 1 zero-
field Hamiltonian A~I · ~S can be diagonalized in terms of
the total angular operator F , resulting in two multiplets
(F=4, F=5) with energies EF =4 = −11A/4 and EF =5 =
9A/4, and a zero-field splitting ∆0 = 5A ≈ 30µeV. At
finite magnetic field, the exact eigenvalues of H can also
be calculated analytically.22 The corresponding energy
levels are shown in Fig. 2.
The tunneling Hamiltonian between the single Bi
dopant level and the source and drain electrodes reads
as
Htun = X
λσ
Vλ (cid:0)d†
σcλσ + h.c(cid:1) ,
(2)
where operator cλ,σ annihilates an electron with spin σ
and orbital quantum number λ ≡ η, ~k, with wave vec-
tor ~k and electrode index η = S, D, while operator dσ
annihilates a spin σ electron in the dopant level. The
scattering rate for the tunneling process, ignoring the
hyperfine coupling, is given by Γη
Vη2ρη, where ρη
is the density of states of the electrode. Our model is
very similar to the one used to describe single electron
transport through a quantum dot exchanged coupled to
a single Mn atom.25,26
0 = 2π
The dissipative dynamics of the electro-nuclear spin
system under the influence of the coupling to the elec-
trodes is described by a Bloch-Redfield (BR) master
equation.26,27 The coupling to the reservoir, given by the
tunneling Hamiltonian, involves transitions between the
3
FIG. 3. (color online) a) and b) Contour plot of the dI/dV
vs. applied bias V and on-site energy ε0 at zero magnetic field
(left) and B = 0.6T (right). c) and d) Conduction spectrum
dI/dV as a function of applied bias for different magnetic
fields at ε0 = −0.4µeV and ε0 = 0.8meV respectively. White
horizontal lines in panel a) and b) marks the values of ε0 in the
2D plots c) and d). In all cases, T = 10mK and Γ0 = 0.1µeV.
Let us consider first the q0 = 1 case (left panel in
Fig. 3). At 10 mK only the ground state(s) is (are) oc-
cupied. Thus, a single transition is seen, from the q = 1
to the q = 0 states. As the magnetic field is ramped,
the energy of the transition increases, reflecting the elec-
tronic Zeeman shift. In contrast, in the q0 = 0 case (right
panel in Fig. 3), all the Zeeman split nuclear levels are
equally populated, even down to mK temperatures. Spin
conservation selection rule implicit in Eq. (2) connects
these 10 quasi-degenerate states of the q = 0 manifold to
the hyperfine spin-split levels of the q = 1 manifold with
different energies. As a result, the dI/dV curve reveals
2 peaks at zero field, reflecting the splitting between the
F = 4 and F = 5 states. At higher fields, the two zero-
field peaks split in up to 10 peaks, that can be resolved
at low enough temperature [see Figs. 3c) and 4b)].
Interestingly, the application of a bias to the q0 = 0
state, for which the nuclear spin states are randomized,
can result in a finite average nuclear magnetic moment.
We show this in Fig. 4a) for finite B. At zero bias, the
charge of the dopant level is q0 = 0, and the nuclear spins
are randomized. When the bias hits the addition energy
a selective depopulation of a given Iz level of the q = 0
manifold starts, in favor of a q = 1 state that mixes the
Iz and Iz ±1 components, resulting in a net accumulation
of nuclear spin. When all the transitions to the F = 4
manifold are allowed, the nuclear spin vanishes again.
Then, when the bias permits the transitions to the F =
5 manifold, the nuclear spin accumulation starts in the
opposite direction. Thus, when eV /2 matches the center
of the F = 4 multiplet, see Fig. 4a), the nuclear spins
tend to align antiparallel to the electronic spin. Then,
when eV /2 reaches the center of the F = 5 multiplet,
FIG. 4.
(color online) a) Average electronic occupation of
the Bi, hQi/e (black line) and nuclear and electronic spins,
hIzi (red line) and hSzi (blue line), respectively. b) dI/dV
vs. bias for different temperatures. Same parameters as 3c)
with B = 0.6T.
the nuclear spins prefer aligning parallel to the electronic
spin.
Whereas all our results discussed so far refer to steady
state conditions, it is worth pointing out that there are
two very different time scales in the dynamics of the sys-
tem. Whereas the charge equilibrates in the dopant level
in a time scale set by 1/Γ0, the nuclear spin relaxation,
dominated by many events of hyperfine exchange with
the electronic spin and subsequent recharging of the Bi,28
takes place at a much longer time scale, hundreds of time
larger than 1/Γ0, but still much shorter than the intrinsic
T1 time of the nuclear spin. Thus, charge fluctuations in
the Bi induce nuclear spin relaxation.28
We finally discuss the experimental feasibility of our
proposal with state of the art techniques. First, accord-
ing to our simulations, see Fig. 4b), the finite field hyper-
fine splitting is resolved at 10 mK but not a 20 mK. At 40
mK the 2 humps associated to the F = 4 and F = 5 man-
ifolds are clearly resolved. Keeping the transport in the
sequential tunneling regime requires that Γ0 ≪ kBT ,
which at 10mK, translates into I ≪ 200pA. This is within
reach of experimental setups.12,16,19,29,30
In conclusion, we have studied the single electron
transport spectroscopy of the hyperfine structure of a Bi
dopant in a silicon nanotransistor. We have shown that,
at sufficiently low temperatures, and when the dopant
is ionized with a gate, the dI/dV corresponding to se-
quential transport can resolve the hyperfine spectrum of
the electron in the donor level.
In addition, the non-
equilibrium transport at finite field results in a hyper
polarization of the nuclear spin state, or nuclear spin ac-
cumulation. These results are different from our previous
work, where we considered the same system in a different
transport regime, cotunneling, and we showed that in-
elastic cotunneling of the dopant in the q = 1 state could
also resolve the hyperfine spectrum and drive the nuclear
spin states out of equilibrium.24 Future work should de-
termine how, in the cotunneling regime, the appearance
of the Kondo effect7 competes with the reported effect.
This work has been financially supported by MEC-
Spain (Grant Nos.
FIS2010-21883-C02-01, FIS2009-
08744, and CONSOLIDER CSD2007-0010) as well as
Generalitat Valenciana, grant Prometeo 2012-11.
1H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert,
I. Ferain, M. Jurczak, and S. Biesemans, Phys. Rev. Lett. 97,
206805 (2006).
2M. Pierre, R. Wacquez, X. Jehl, M. Sanquer, M. Vinet, and
O. Cueto, Nature nanotechnology 5, 133 (2009).
3G. P. Lansbergen, G. C. Tettamanzi, J. Verduijn, N. Collaert,
S. Biesemans, M. Blaauboer, and S. Rogge, Nano Letters 10,
455 (2010).
4K. Y. Tan, K. W. Chan, M. Mottonen, A. Morello, C. Yang, J. v.
Donkelaar, A. Alves, J.-M. Pirkkalainen, D. N. Jamieson, R. G.
Clark, et al., Nano Letters 10, 11 (2010).
5V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche, M. San-
quer, and L. I. Glazman, Phys. Rev. B 83, 075401 (2011).
6M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee,
O. Warschkow, L. C. L. Hollenberg, G. Klimeck, and M. Y. Sim-
mons, Nature Nanotechnology 7, 242 (2012).
7G. C. Tettamanzi, J. Verduijn, G. P. Lansbergen, M. Blaauboer,
M. J. Calder´on, R. Aguado, and S. Rogge, Phys. Rev. Lett. 108,
046803 (2012).
8B. Kane, Nature 393, 133 (1998).
9D. P. DiVincenzo, D. Bacon, J. Kempe, G. Burkard, and K. B.
Whaley, Nature 408, 339 (2000).
10T. D. Ladd, F. Jelezko, R. Laflamme, Y. N. Y, C. Monroe, and
J. L. O'Brien, Nature 464, 45 (2010).
11J. M. Elzerman, R. Hanson, L. H. W. van Beveren, B. Witkamp,
L. M. K. Vandersypen, and L. P. Kouwenhoven, Nature 430, 431
(2004).
12A. Morello, J. J. Pla, F. A. Zwanenburg, K. W. Chan, K. Y.
Tan, H. Huebl, M. Mottonen, C. D. Nugroho, C. Yang, J. A. v.
Donkelaar, et al., Nature 467, 687 (2010).
13P. Neumann, J. Beck, M. Steiner, F. Rempp, H. Fedder, P. R.
Hemmer, J. Wrachtrup, and F. Jelezko, Science 329, 542 (2010).
4
14K.-M. C. Fu, T. D. Ladd, C. Santori, and Y. Yamamoto, Phys.
Rev. B 69, 125306 (2004).
15D. Sleiter, N. Y. Kim, K. Nozawa, T. D. Ladd, M. L. W. Thewalt,
and Y. Yamamoto, New Journal of Physics 12, 093028 (2010).
16J. R. Petta, J. M. Taylor, A. C. Johnson, A. Yacoby, M. D.
Lukin, C. M. Marcus, M. P. Hanson, and A. C. Gossard, Phys.
Rev. Lett. 100, 067601 (2008).
17D. J. Reilly, J. M. Taylor, J. R. Petta, C. M. Marcus, M. P.
Hanson, and A. C. Gossard, Science 321, 817 (2008).
18S. Foletti, H. Bluhm, D. Mahalu, V. Umansky, and A. Yacoby,
Nature Physics 5, 903 (2009).
19T. Kobayashi, K. Hitachi, S. Sasaki, and K. Muraki, Phys. Rev.
Lett. 107, 216802 (2011).
20R. E. George, W. Witzel, H. Riemann, N. V. Abrosimov,
N. Notzel, M. L. W. Thewalt, and J. J. L. Morton, Phys. Rev.
Lett. 105, 067601 (2010).
21G. W. Morley, M. Warner, A. M. Stoneham, P. T. Greenland,
J. van Tol, C. W. M. Kay, and G. Aeppli, Nature Materials 9,
725 (2010).
22M. H. Mohammady, G. W. Morley, and T. S. Monteiro, Phys.
Rev. Lett. 105, 067602 (2010).
23T. Sekiguchi, M. Steger, K. Saeedi, M. L. W. Thewalt, H. Rie-
mann, N. V. Abrosimov, and N. Notzel, Phys. Rev. Lett. 104,
137402 (2010).
24F. Delgado and J. Fern´andez-Rossier, Phys. Rev. Lett. 107,
076804 (2011).
25A. L. Efros, E. I. Rashba, and M. Rosen, Phys. Rev. Lett. 87,
206601 (2001).
26J. Fern´andez-Rossier and R. Aguado, Phys. Rev. Lett. 98, 106805
(2007).
27C. Cohen-Tannoudji, G. Grynberg, and J. Dupont-Roc, Atom-
Photon Interactions (Wiley and Sons, INC., New York, 1998).
28L. Besombes, Y. Leger, J. Bernos, H. Boukari, H. Mariette, J. P.
Poizat, T. Clement, J. Fern´andez-Rossier, and R. Aguado, Phys.
Rev. B 78, 125324 (2008).
29J. Baugh, Y. Kitamura, K. Ono, and S. Tarucha, Phys. Rev.
Lett. 99, 096804 (2007).
30T. S. Jespersen, K. Grove-Rasmussen, J. Paaske, K. Muraki,
T. F. an J. Nygard, and K. Flensberg, Nature Physics 7, 348
(2011).
|
1108.5256 | 2 | 1108 | 2011-09-05T15:29:49 | Second-harmonic generation from coupled plasmon modes in a single dimer of gold nanospheres | [
"cond-mat.mes-hall"
] | We show that a dimer made of two gold nanospheres exhibits a remarkable efficiency for second-harmonic generation under femtosecond optical excitation. The detectable nonlinear emission for the given particle size and excitation wavelength arises when the two nanoparticles are as close as possible to contact, as in situ controlled and measured using the tip of an atomic force microscope. The excitation wavelength dependence of the second-harmonic signal supports a coupled plasmon resonance origin with radiation from the dimer gap. This nanometer-size light source might be used for high-resolution near-field optical microscopy. | cond-mat.mes-hall | cond-mat |
Second-harmonic generation from coupled plasmon modes
in a single dimer of gold nanospheres
A. Slablab1, L. Le Xuan1,∗ M. Zielinski1, Y. de Wilde2, V. Jacques1, D. Chauvat1, and J.-F. Roch1
1Laboratoire de Photonique Quantique et Mol´eculaire,
Ecole Normale Sup´erieure de Cachan and CNRS, UMR 8537, F-94235 Cachan, France and
2Institut Langevin, ESPCI ParisTech and CNRS, UMR 7587, F-75231 Paris, France
(Dated: June 5, 2018)
We show that a dimer made of two gold nanospheres exhibits a remarkable efficiency for second-
harmonic generation under femtosecond optical excitation. The detectable nonlinear emission for
the given particle size and excitation wavelength arises when the two nanoparticles are as close as
possible to contact, as in situ controlled and measured using the tip of an atomic force microscope.
The excitation wavelength dependence of the second-harmonic signal supports a coupled plasmon
resonance origin with radiation from the dimer gap. This nanometer-size light source might be used
for high-resolution near-field optical microscopy.
INTRODUCTION
During the last decade, nonlinear nanoparticles have
been extensively studied as new light sources at the
nanoscale. In particular, nanoparticles consisting of non-
centrosymmetric material exhibit second-harmonic gen-
eration (SHG) [1–4] which can be used for nonlinear opti-
cal microscopy [5–9]. For nanoparticles made of pure no-
ble metals, high electron polarisability could lead to much
stronger nonlinear effects. However, inversion symmetry
of the metallic crystalline structure forbids bulk second-
order electric dipole response. For a metallic nanosphere,
second-order polarization associated to induced surface
dipole moments and volumic quadrupole moments pro-
duces a weak SHG signal [10–12], with a strong depen-
dence to the nanoparticle shape and size [13, 14].
Efficient SHG at the nanoscale can be obtained by plas-
mon enhancement at the surface of a metallic tip [15],
or by coupled plasmon modes in engineered metallic
nanostructures with specific geometry, like T-shaped gold
nano-dimers [16], bowtie-shaped nano-antenna [17], and
gold nanowires [18].
In that context, a simple dimer
structure consisting of two metallic nanospheres appears
as a testbed for studying the plasmon coupling influ-
ence on the nonlinear optical response. Indeed, the lin-
ear scattering of this composite nanostructure exhibits
a wealth of specific properties depending on its geomet-
rical parameters [19–24]. The coupled plasmon modes
have resonance frequencies which can be tuned over the
whole visible spectrum by changing the dimer geome-
try [21]. Moreover, the electromagnetic field density is
greatly enhanced at the dimer gap and highly efficient
four-wave mixing has been observed from such metallic
dimers [25, 26].
In this Letter, we explore the second-order nonlin-
ear properties of a single dimer consisting of two gold
nanospheres (GNs) with controlable distance. We show
that this dimer nanostructure leads to highly efficient
SHG under femtosecond optical illumination in spite of
its apparent centrosymmetry considered as a whole. The
relative position of the two GNs is adjusted with nanome-
ter accuracy using the tip of an atomic force microscope
(AFM) [23]. We show that the SHG signal under the ex-
perimental excitation wavelength-particle sizes condition
is strongly enhanced when the two GNs are very close to
contact, with a strong dependence on their mutual size
ratio. The variation of the SHG intensity with the exci-
tation wavelength supports the role of an near-infrared
(IR) resonance resulting from the coupling of the plas-
mon oscillations in the two gold nanospheres [21, 25].
EXPERIMENT AND RESULTS
The principle of the experiment is shown in Fig. 1(a).
The nonlinear optical response of coupled GNs is inves-
tigated using a nano-optomechanical setup consisting of
an AFM (Asylum Research, MFP-3D BIO) on top of a
self-made inverted optical microscope. The GNs (100-
nm diameter) were purchased from the British Biocell
International (BBI) corporation. The colloidal solution,
which is stabilized in water by citric acid, is deposited by
spin coating on a standard 150-µm thick glass coverslip.
Before spin coating, the glass coverslip was silanized in
order to functionalize its surface with NH+
3 groups. Since
the GNs have negative charges on their surface, an elec-
trostatic interaction allows to efficiently catch them on
the glass surface during the spin coating, thus leading to
well-dispersed GNs on the substrate. The AFM is used
both to record the surface topography of the sample and
to perform mechanical manipulation of the GNs. The
formation of a single gold dimer is gradually achieved by
pushing a GN toward another with the AFM tip, thus
controlling the interparticle distance from large separa-
tion to contact between the two spheres. A titanium-
doped sapphire (Ti:Sa) laser emitting 100 fs pulses in
the 800-1000 nm wavelength range at 80 MHz repetition
rate is tightly focused onto the sample through a high nu-
merical aperture microscope objective (NA = 1.4, corre-
sponding to a maximum collection half angle of 68◦). The
2
from the second-order nonlinear process [27]. We at-
tribute this emission line to SHG from the dimer struc-
ture. Furthermore, the emission spectra clearly exhibit a
maximum of SHG when the excitation laser wavelength
is within the 950 to 1000 nm range (Fig. 2(b)), giving ev-
idence for an infrared resonance associated to the dimer
structure.
This spectral behavior of the second-harmonic re-
sponse is well explained by the analysis of Ref. [21] which
theoretically describes the linear optical response of a
gold dimer in the nearly touching regime. When the
two GNs are getting close to contact, the two single
nanosphere plasmon modes are coupled, ending in a new
plasmon mode which resonance is rapidly shifted towards
the infrared. We confirm this prediction with a finite
difference time domain (FDTD) simulation of the linear
optical properties of a gold dimer, performed with the
Lumerical software [28]. In agreement with Ref. [21], a
resonant behavior of the scattering cross-section is ob-
served as well as a rapid shift of this resonance to the
infrared as the gap is reduced. Choosing a 0.08 nm ef-
fective gap distance for touching GNs of 100 nm size, we
compute the linear scattering cross-section of the dimer,
displayed in Fig. 2(c). The dimer scattering cross-section
variation closely matches the measured SHG excitation
FIG. 2: Second-harmonic radiation of individual gold dimers.
(a)-Emission spectrum from a gold dimer recorded for an ex-
citation laser wavelength at λex = 980 nm, showing a strong
SHG spectral peak and a much weaker and broader two-
photon excited luminescence (TPEL). (b)-Emission spectra
recorded while tuning the excitation laser wavelength λex from
850 to 1010 nm. (c)-FDTD simulation of the scattering cross-
section of a dimer consisting of two 100 nm GNs separated by
a 0.08 nm effective gap distance.
(a)-Experimental setup. AFM tip: Olympus,
FIG. 1:
AC160TS used as purchased; MO: oil immersion microscope
objective (×100, NA = 1.4); DM: dichroic mirror; FM:
switchable mirror directing the collected light either to a spec-
trograph or to a silicon avalanche photodiode (APD). To-
pography measurements are done in the AFM tapping mode
while the contact mode is used to perform mechanical manip-
ulation of the GN. Optical images are recorded by scanning
the sample in x and y directions while recording the emitted
photons with the APD. The MO is mounted on a piezoelec-
tric transducer in order to adjust the laser beam focus on the
z-axis. (b)-When two GNs are in contact (see AFM image), a
strong nonlinear emission is observed (see optical image). No
emission is observed for isolated single GNs. (c)-When two
isolated GNs are brought in contact using the AFM tip, an
associated bright emission spot appears in the optical image.
light emitted by the GNs is collected with the same ob-
jective, spectrally filtered from the remaining excitation
light using a dichroic beamsplitter, and finally directed
either to a spectrograph or to a silicon avalanche pho-
todiode (APD) working in the photon counting regime.
The AFM tip and the excitation laser beam are carefully
aligned on the same axis. Simultaneous record of the to-
pography and the optical response then allows to monitor
the onset of second-order nonlinear effects as the dimer
is formed.
A typical realization of the experiment is depicted in
Figs. 1(b) and (c). For the laser input mean power range
used in the experiment (∼ 500 µW), the nonlinear optical
emission is not observed for isolated GNs (see Fig. 1(b)),
whereas a strong nonlinear optical signal clearly appears
when two isolated GNs are brought to contact using the
AFM-based nanopositioning technique (Fig. 1(c)).
Emission spectra recorded from this gold dimer while
tuning the excitation laser wavelength from 850 to
1000 nm are shown in Fig. 2(b). For each excitation
wavelength, a strong narrow emission peak at half the
excitation wavelength is observed alongside with a weak
and broad two-photon excited luminescence (TPEL)
background (Fig. 2(a)). In addition, the peak intensity
scales quadratically with the laser power, as expected
DMAFM tipSpectrographAPDFM200 nm300 nmAFM imageOptical imagefs laser(a)(b)(c)GNsMO@ 990 nmxyz(b)250020001500100050005405205004804604404201000980960940920900880Emission wavelength (nm)λem=λex2Intensity (a.u.)Excitation wavelength (nm)Intensity (a.u.)(a)300025002000150010005000560520480440Emission wavelength (nm)Emission wavelength (nm)SHGTPELExcitation wavelength (nm)Scattering cross section (a.u.) 120011001000900(c) 3
allows to infer when the two GNs are nearly in contact.
As one GN is approached toward the other with nano-
metric steps, one could expect a gradual rise of the
SHG signal. However, no SHG is detected until the two
GNs are very close to contact (see inset in Fig. 4-middle
panel), in which case a high count rate of SHG photons is
observed (Fig. 5-left panel) at IR resonance wavelength.
By pushing further one GN towards the other, the ob-
served SHG signal remains unchanged, allowing to con-
clude that the SHG signal only appears when the two
GNs are very close to contact. This behavior is related
to the sudden increase of the excitation field at the gap re-
gion for very small interparticle distance. Indeed, the in-
duced accumulation of opposite charges discussed above
leads to a strong enhancement of the excitation electro-
magnetic field at the dimer gap. Using the measured
particles sizes (particle diameters of 100 nm and 80 nm)
from Fig. 4 (middle panel) as parameters and consid-
ering the GNs completely spherical, FDTD simulations
depicted in Fig. 4 (right panel) shows that the excitation
field gains about 6 orders of magnitude from an inter-
FIG. 4: (Left panel) (a) to (d)-Topography images showing
the assembly of a dimer by using the AFM tip to move one
GN towards the other. (Central panel) A cross-section (red
dashed line in (a)) is used to estimate the distance d between
the two GNs. The SHG signal is observed only when the two
GNs are in contact as shown in the insets of the cross-section
graphs. (Right panel) FDTD simulation of the electromag-
netic field intensity building up at the dimer gap as this gap
is reduced. The gap values are those inferred from the fit of
the cross-sections. In the case (d) of contact between the two
spheres, a 0.08 nm value is taken in order to agree with the
spectral behavior shown in Fig. 2. The simulation has been
done with spherical particles of 100 nm and 80 nm in diame-
ter, as measures topographically. Note the log-scale showing
a six-order-of-magnitude increase between the two extreme
values of the gap.
FIG. 3: Polar diagrams showing the SHG efficiency as a func-
tion of the angle of the linearly-polarized excitation laser for
two different dimers (see topography image).
Intense lobes
along the dimer axis are observed.
spectra.
In particular, it exhibits a minimum close to
920 nm and a maximum close to 990 nm, as observed in
Fig. 2(a). Such a correlation supports the resonant plas-
monic origin of the SHG emission.
To further characterize the nature of the coupled plas-
mon mode, a polarization analysis is performed while ex-
citing the dimer in resonance at λex = 990 nm and rotat-
ing the linear excitation polarization using a half-wave
plate placed before the dichroic beamsplitter (Fig. 1(a)).
The polar diagrams measured for two different dimers
are shown in Fig. 3. The SHG intensity vanishes when
the excitation polarization is perpendicular to the dimer
axis, and increases to a maximum value when the polar-
ization is set along the dimer axis, as revealed by the cor-
responding AFM topographic images. This dipolar like
response can be explained with a simple model based on
the coupling between the plasmon oscillations in the two
GNs. At the dimer gap, a strong accumulation of oppo-
site charges close to each other is induced. Any charge
oscillation driven by external light within the gap is ac-
companied by a charge redistribution over each particle
in order to maintain intraparticle charge neutrality. This
redistribution finally leads to a large dipole strength of
the gold dimer considered as a whole. While the interac-
tion of light with charges is weak for an exciting electric
field perpendicular to the dimer axis, the plasmon mode
coupling becomes efficient when the field is applied along
this axis, as experimentally observed (see Fig. 3).
Now we study the onset of the nonlinear optical re-
sponse while varying the interparticle distance from large
separation to contact. For that purpose, a gold dimer
is gradually formed with nanometric steps by pushing a
GN toward another with the AFM tip. After each dis-
placement, an AFM topography image and a raster scan
SHG image are jointly recorded. Four intermediate sit-
uations are shown in Fig. 4(a)-(d). Despite a relatively
small AFM tip radius (≈ 7 nm), a direct measurement
of the gap distance d between the two nanoparticles is
obviously not possible. However, this parameter can be
inferred with a few nanometers accuracy from the dip ob-
served in a cross section of the topographic image of the
dimer (see central panel of Fig. 4), once the size of the
GNs and the tip radius are known. The corresponding fit
0°45°90°135°180°225°270°315°0°45°90°135°180°225°270°315°200 nmSHGDistance (nm)0200400(b)SHGSHGd∼20nmd∼4nmd∼0nm300 nmSHG100(c)100100SHGd∼38nm100 nm(a)100-202468logE2(d) particle distance decreasing from 4.0 to 0.08 nm. SHG
originates from this huge field which is confined within
a nanometric volume located at the dimer gap. This
localized excitation is compatible with the SHG raster-
scan images (see Fig.1(c)) which show bright spots with a
diffraction-limited size (≈ 320 nm FWHM), as expected
for a point-like emission.
DISCUSSION
Second-order nonlinear optical processes require an
overall noncentrosymmetry which can originate from a
combination of different effects, such as intrinsic geomet-
rical features of the dimer, excitation field dissymetry,
or our specific detection geometry. Since a simple size
difference between the two GNs would break the dimer
centrosymmetry [25], we measured the SHG efficiency as
a function of the size difference h between the two GNs.
The experiment is performed for 19 single dimers in close
contact geometry while keeping the excitation at 990 nm
wavelength. As shown in Fig. 5(a), the SHG efficiency
decreases by almost two orders of magnitude when h is
changed from 0 to 35 nm. This result is a priori in con-
tradiction with the above argument where SHG efficiency
might increase with the size difference between the two
GNs of the dimer.
To understand this behavior, we compute a FDTD sim-
ulation of the optical scattering cross section of the dimer
as a function of the h parameter. As the asymmetry be-
tween the two GNs is increased, the resonance resulting
4
from the coupling of the plasmon modes is blue-shifted
and its amplitude decreases (Fig. 5(b)). From these sim-
ulations, we can then compute the fourth power of the
electric field amplitude at the gap while exciting at the
fixed 990 nm wavelength. This quantity, which is rele-
vant to the locally enhanced field around the gap, is found
to decrease by roughly two orders of magnitude when h
varies from 0 to 35 nm (see inset in Fig. 5(b)), the same
factor as measured. It confirms that the decrease in SHG
intensity matches the wavelength shift in resonance, and
that the SHG originates from the neighborhood region
around the dimer gap, rather than from an overall bro-
ken symmetry corresponding to the association of two
GNs with different size.
In our specific case, the SHG might originate from the
specific experimental geometry. The tightly focused ex-
citation beam creates a field dissymmetry from one side
to the other of the gap plan in the light propagation
direction. This dissymmetry induces nonlocally excited
electric-dipole second-order processes inside the spheres
and surrounding the gap, and locally excited quadrupolar
processes from the metallic surfaces [11, 12, 14]. Any re-
sulting off-axis radiation can then be efficiently collected
by the high numerical aperture objective.
In addition,
the SHG could be enhanced either by specific geomet-
rical features at the gap associated to facets of the two
GNs [30] or by organic layers on the GNs surface [31].
CONCLUSION AND PROSPECTS
In conclusion, we have experimentally demonstrated
that highly efficient SHG is obtained from two GNs when
very close to contact, for the given geometry-size rela-
tion and optical excitation wavelength. Spectral analysis
of the SHG response and polarization analysis support a
coupled plasmon resonance origin of the nonlinear emis-
sion. Since SHG is emitted from a nanometric volume at
the dimer gap, it might be used as a nanosource for the
development of high-resolution near-field imaging. Using
the AFM-tip pushing technique, more complex nanos-
tructures can be assembled, such as a trimer nanoparticle
which can lead to a tunable nano-half wave plate [32], or
a succession of metallic beads with decreasing sizes which
forms an efficient plasmonic nano-lens with high field con-
centration [33]. Such structures are likely to exhibit sur-
prising nonlinear properties in the optical domain.
FIG. 5: (a) SHG efficiency plotted on a log-scale as a function
of the size difference h between the two GNs of an asymmetric
dimer (see inset). The excitation wavelength is at λ = 990
nm and laser input mean power is (∼ 500 µW). (b) Simula-
tion of the scattering cross-section for different values of h.
Inset: Log-scale plot of the fourth power of the electric field
amplitude at the dimer gap Egap4 as a function of h, for a
constant 990 nm excitation wavelength.
Acknowledgements
We dedicate this work to our esteemed colleague Do-
minique Chauvat who passed away during the prepara-
tion of the manuscript. We are grateful to S. Perruchas
and T. Gacoin for providing us with the GNs sample. We
h=10nmh=20nmh=30nm1300120011001000900wavelength (nm)Scattering cross-section (a.u.)h(nm)h100090011001200Wavelength (nm)1300(a)(b)h=0nmEgap4101424101524101623020100456710023456710002403020100103210h(nm)201030400SHG emission (x10 cts.s )-1 3 thank J.-J. Greffet and F. Marquier for priceless discus-
sions. This work is supported by C'Nano Ile-de-France.
∗ Electronic address: xuan-loc.le@m4x.org
[1] J. C. Johnson, H. Yan, R. D. Schaller, P. B. Petersen,
P. Yang and R. J. Saykally, "Near-Field Imaging of Non-
linear Optical Mixing in Single Zinc Oxide Nanowires,"
Nano Lett. 2, 279-283 (2002).
[2] A. B. Djurisi´c and Y. H. Leung, "Optical properties of
ZnO nanostructures," Small 2, 944-961 (2006).
[3] M. Zielinski, D. Oron, D. Chauvat, J. Zyss, " Second-
harmonic generation from a single core/shell quantum
dot," Small 5, 2835-2840 (2009).
[4] M. Zielinski, S. Winter, R. Kolkowski, C. Nogues, D.
Oron, J. Zyss, D. Chauvat, "Nanoengineering the sec-
ond order susceptibility in semiconductor quantum dot
heterostructures," Opt. Express 19, 6657-6670 (2011).
[5] L. Bonacina, Y. Mugnier, F. Courvoisier, R. Le Dantec,
J. Extermann, Y. Lambert, V. Boutou, C. Galez, J.-P.
Wolf, " Polar Fe(IO3)3 nanocrystals as local probes for
nonlinear microscopy," Applied Physics B 87, 399-403,
(2007).
[6] L. Le Xuan, C. Zhou, A. Slablab, D. Chauvat, C.
Tard, S. Perruchas, T. Gacoin, P. Villeval, J.-F. Roch,
"Photostable second-harmonic generation from a single
KTiOPO4 nanocrystal for nonlinear microscopy," Small
4, 1332-1336 (2008).
[7] C.-L. Hsieh, R. Grange, Y. Pu, D. Psaltis, " Three-
dimensional harmonic holographic microcopy using
nanoparticles as probes for cell imaging," Opt. Express
17, 2880-2891(2009).
[8] A. V. Kachynski, A. N. Kuzmin, M. Nyk, I. Roy, P. N.
Prasad, "Zinc Oxide Nanocrystals for Non-resonant Non-
linear Optical Microscopy in Biology and Medicine," J.
Phys. Chem. C 112, 10721-10724 (2008).
[9] Y. Nakayama, P. J. Pauzauskie, A. Radenovic, R. M.
Onorato, R. J. Saykally, J. Liphardt, P. Yang, "Tunable
nanowire nonlinear optical probe," Nature 447, 1098-
1101 (2007).
[10] V. L. Brudny, B. S. Mendoza, W. L. Mochan, "Second-
harmonic generation from spherical particles," Phys.
Rev. B 62, 11152-11162 (2000).
[11] J. Dadap, J. Shan, T. F. Heinz, "Theory of optical
second-harmonic generation from a sphere of centrosym-
metric material: small-particle limit," J. Opt. Soc. Am.
B 21, 1328-1347 (2004).
[12] J. Butet, J. Duboisset, G. Bachelier, I. Russier-Antoine,
E. Benichou, C. Jonin, P.-F. Brevet, "Optical Second
Harmonic Generation of Single Metallic Nanoparticles
Embedded in a Homogeneous Medium," Nano Lett. 10,
1717-1721 (2010).
[13] J. Nappa, G. Revillod, I. Russier-Antoine, E. Benichou,
C. Jonin, P.-F. Brevet, "Electric dipole origin of the
second harmonic generation of small metallic particles,"
Phys. Rev. B 71, 165407-165410 (2005).
[14] J. Shan, J. I. Dadap, I. Stiopkin, G. A. Reider, T. F.
Heinz, "Experimental study of optical second-harmonic
scattering from spherical nanoparticles," Phys. Rev. A
73, 023819-023822 (2006).
[15] A. Bouhelier, M. R. Beversluis, A. Hartschuh, L.
5
Novotny, "Near-field second-harmonic generation in-
duced by local field enhancement," Phys. Rev. Lett. 90,
013903-013906 (2003).
[16] H. Husu, B. K. Canfield, J. Laukkanen, B. Bai, M. Kuit-
tinen, J. Turunen, M. Kauranen, "Local-field effects in
the nonlinear optical response of metamaterials," Meta-
materials 2, 155-168 (2008).
[17] T. Hanke, G. Krauss, D. Trautlein, B. Wild, R. Brats-
chitsch, A. Leitenstorfer, "Efficient Nonlinear Light
Emission of Single Gold Optical Antennas Driven by
Few-Cycle Near-Infrared Pulses," Phys. Rev. Lett. 103,
257404-257407 (2009).
[18] A. Benedetti, M. Centini, C. Sibilia, M. Bertolotti, "En-
gineering the second harmonic generation pattern from
coupled gold nanowires," J. Opt. Soc. Am. B 27, 408-
416 (2010).
[19] W. Rechberger, A. Hohenau, A. Leitner, J. R. Krenn,
B. Lamprecht, F. R. Aussenegg, "Optical properties of
two interacting gold nanoparticles," Opt. Commun. 220,
137-141 (2003).
[20] T. Atay, J.-H. Song, A. V. Nurmikko, "Strongly inter-
acting plasmon nanoparticle pairs: From dipole-dipole
interaction to conductively coupled regime," Nano Lett.
4, 1627-1631 (2004).
[21] I. Romero, J. Aizpurua, G. W. Bryant, F. D. Garc´ıa de
Abajo, "Plasmons in nearly touching metallic nanoparti-
cles: singular response in the limit of touching dimers,"
Opt. Express 14, 9988-9999 (2006).
[22] A. L. Lereu, G. Sanchez-Mosteiro, P. Ghenuche, R.
Quidant, N. F. Van Hulst, "Individual gold dimers inves-
tigated by far- and near-field imaging," Journal of Mi-
croscopy 229, 254-258 (2008).
[23] S. Schietinger, M. Barth, T. Aichele, O. Benson,
"Plasmon-Enhanced Single Photon Emission from a
Nanoassembled Metal Diamond Hybrid Structure at
Room Temperature," Nano Lett. 9, 1694-1698 (2009).
[24] P. K. Jain and M. A. El-Sayed, "Plasmonic coupling
in noble metal nanostructures," Chem. Phys. Lett. 487,
153-164, (2010).
[25] M. Danckwerts and L. Novotny, "Optical frequency mix-
ing at coupled gold nanoparticles," Phys. Rev. Lett. 98,
026104-026107 (2007).
[26] S. Palomba and L. Novotny, "Near-Field Imaging with a
Localized Nonlinear Light Source," Nano Lett. 9, 3801-
3804 (2009).
[27] R. W. Boyd, Nonlinear Optics (Academic Press, New
York, 1992).
[28] We use the gold dielectric constants reported in Ref. [29]
for a 500-1400 nm wavelength range and we do not take
into account the influence of the substrate. The two GNs
are supposed to be in air and the polarization of the
excitation field is linear oriented along the dimer axis.
[29] P. B. Johnson and R. W. Christy, "Optical constants of
the noble metals," Phys. Rev. B 6, 4370-4379 (1972).
[30] S.-C. Yang, H. Kobori, C.-L. He, M.-H. Lin, H.-Y. Chen,
C. Li, M. Kanehara, T. Teranishi, S. Gwo, "Plasmon Hy-
bridization in Individual Gold Nanocrystal Dimers: Di-
rect Observation of Bright and Dark Modes," Nano Lett.
10, 632-637 (2010).
[31] P. Rooney, A. Rezaee, S. Xu, T. Manifar, A. Hassan-
zadeh, G. Podoprygorina, V. Bohmer, C. Rangan, S.
Mittler, "Control of surface plasmon resonances in dielec-
trically coated proximate gold nanoparticles immobilized
on a substrate," Phys. Rev. B 77, 235446-235452 (2008).
[32] Z. Li, T. Shegai, G. Haran, H. Xu, "Multiple-particle
nanoantennas for enormous enhancement and polariza-
tion control of light emission," ACS Nano 3, 637-642
(2009).
[33] K. Li, M. I. Stockman, D. J. Bergman, "Self-Similar
Chain of Metal Nanospheres as an Efficient Nanolens,"
Phys. Rev. Lett. 91, 227402-227405 (2003).
6
|
1303.3529 | 2 | 1303 | 2013-09-19T19:22:06 | Hall Drag and Magnetodrag in Graphene | [
"cond-mat.mes-hall"
] | Massless Dirac fermions in graphene at charge neutrality form a strongly interacting system in which both charged and neutral (energy) modes play an important role. These modes are essentially decoupled in the absence of a magnetic field, but become strongly coupled when a field is applied. We show that these ideas explain the recently observed giant magnetodrag, arising in classically weak fields when electron density is tuned near charge neutrality. We predict strong Hall drag in this regime, which is in stark departure from the weak coupling regime, where theory predicts the absence of Hall drag. Energy-driven magnetodrag and Hall drag arise in a wide temperature range and at weak magnetic fields, and feature an unusually strong dependence on field and carrier density. | cond-mat.mes-hall | cond-mat |
Hall Drag and Magnetodrag in Graphene
1 Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA and
2 School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
Justin C. W. Song1,2 and Leonid S. Levitov1
Massless Dirac fermions in graphene at charge neutrality form a strongly interacting system in
which both charged and neutral (energy) modes play an important role. These modes are essentially
decoupled in the absence of a magnetic field, but become strongly coupled when a field is applied.
We show that these ideas explain the recently observed giant magnetodrag, arising in classically
weak fields when electron density is tuned near charge neutrality. We predict strong Hall drag in
this regime, which is in stark departure from the weak coupling regime, where theory predicts the
absence of Hall drag. Energy-driven magnetodrag and Hall drag arise in a wide temperature range
and at weak magnetic fields, and feature an unusually strong dependence on field and carrier density.
Graphene near charge neutrality (CN) hosts an intrigu-
ing electron-hole system with unique properties[1 -- 10].
Our understanding of the behavior at CN would greatly
benefit from introducing ways to couple the novel neu-
tral modes predicted at CN to charge modes which can
be easily probed in transport measurements. There is a
long history of employing magnetic field for such a pur-
pose, since transport in charge-neutral plasmas is ultra-
sensitive to the presence of external magnetic fields[11].
A new interesting system in which magnetotransport
at CN can be probed are atomically thin graphene double
layer G/hBN/G structures[12, 13]. Strong Coulomb cou-
pling between adjacent layers in these systems results in
strong Coulomb drag, arising when current applied in one
(active) layer induces a voltage in the adjacent (passive)
layer[13 -- 22]. Recent measurements[13] revealed drag re-
sistance that peaks near CN and has dramatic magnetic
field dependence, with the peak value increasing by more
than an order of magnitude (and changing sign) upon
application of a relatively weak B field. Strong mag-
netic field dependence of drag has been observed pre-
viously in other double layer two-dimensional electron
gas (2DEG) heterostructures[23 -- 25], however these ex-
periments were carried out in the quantum Hall regime,
whereas the anomalous magnetodrag found in Ref.[13]
occurs at classically weak fields B <∼ 1 T.
Here we explain this puzzling behavior in terms of an
energy-driven drag mechanism which involves coupled
energy and charge transport[20, 22] (see Fig.1). En-
ergy transport plays a key role because of fast verti-
cal energy transfer due to interlayer Coulomb coupling
in G/hBN/G systems[20] and relatively slow electron-
lattice cooling[28, 29]. As a result, current applied in one
layer can create a spatial temperature gradient for elec-
trons in both layers, giving rise to thermoelectric drag
voltage. The effect peaks at CN, since thermoelectric re-
sponse is large close to CN[8 -- 10] and diminishes as 1/EF
upon doping away from CN[30, 31]. Drag arising from
this mechanism depends on thermoelectric response and,
unlike the conventional momentum drag mechanism, it
is insensitive to the electon-electron interaction strength.
Another interesting effect that can be probed in these
FIG. 1: Energy-driven magnetodrag in a double layer
graphene heterostructure close to CN. (a) Schematic of charge
current, temperature gradients, and electric field in the two
layers that give rise to a negative ρdrag(cid:107)
. (b,c) Magnetodrag
resistivity, ρdrag(cid:107)
, obtained from Eqs.(11),(13). Parameter val-
ues: B = 0.6 T, n0 = 1011 cm−2, T = 150 K, and ρ0 = h
3e2 .
The B = 0 dependence taken from the model of drag at zero
B field [20, 21].(d) Experimentally measured magnetodrag re-
sistivity in G/hBN/G heterostructures, reproduced from Ref.
[13] for the same B values as in (c). Application of magnetic
field leads to a giant negative drag at CN. Note the simi-
larity between data and theoretically predicted drag density
dependence, B dependence, and sign.
systems is that of Hall drag. It has long been argued that,
at weak coupling, no Hall voltage can arise in the passive
layer in the presence of current in the active layer [26, 27].
This is because transferred momentum is parallel to ve-
locity, allowing only a longitudinal "back-current" to de-
velop in the passive layer. As we shall see, a very differ-
ent behavior arises at strong coupling, owing to the long-
range energy currents leading to electron-lattice tempera-
ture imbalance. Close to CN, the magnitude of the cross-
couplings between charge and energy currents becomes
large, producing a finite Hall drag, VH = Rdrag
H I(cid:107).
H and Rdrag(cid:107)
As we will see, energy currents result in Hall and mag-
netodrag resistances, Rdrag
, that are large and
peak near CN, see Fig.1 and Fig.2. These large values
arise even for classically weak fields B ∼ 0.1 T, exceed-
ing by two orders of magnitude the values found previ-
ously in GaAs/AlGaAs 2DEG heterostructures [23 -- 25] at
similar fields. The mechanism based on coupled energy
and charge transport predicts large and negative drag at
CN that matches recent experiments (see Fig.1c,d). Our
mechanism naturally leads to Hall drag because verti-
cal energy transfer between layers does not discriminate
between longitudinal and transverse heat currents since
temperature profile is a scalar field. This stands in con-
trast to conventional momentum driven drag, where mo-
mentum transfer is parallel to the applied current [26, 27].
Heat current and an electric field, induced by charge
current and temperature gradients, are coupled via the
thermoelectric effect altered by the B field,
∇T
T
.
jq = Qj, E = Q
(1)
Here Q is a 2 × 2 matrix, of which diagonal compo-
nents describe the Peltier and Thompson effects, and off-
diagonal components describe the Nernst-Ettingshausen
effect. Onsager reciprocity requires that Q in both the
expressions for jq and E are the same [see analysis fol-
lowing Eq.(9)]. As an example of how our mechanism
produces drag consider the Hall bar geometry, see Fig.1.
When a longitudinal charge current is applied in the ac-
tive layer (for B (cid:54)= 0) a transverse (Ettingshausen) heat
current develops in both layers through efficient verti-
cal energy transfer. Nernst voltage in the passive layer
results in a longitudinal magnetodrag of a negative sign.
To obtain the electric field in layer 2 induced by cur-
rent applied in layer 1, we first need to understand the
coupling of temperature profiles T1,2(r) in the two layers.
Energy transport in the system can be described by
−∇κ1∇δT1 + a(δT1 − δT2) + λδT1 = −∇ ·(cid:0)Q(1)j(cid:1)
−∇κ2∇δT2 + a(δT2 − δT1) + λδT2 = 0
with a the energy transfer rate between the two layers
[20], λ the electron-lattice cooling rate, and δTi = Ti− T0
(here T0 is the lattice temperature, equal for both layers).
Here we focus on a Hall-bar geometry of two parallel
rectangular layers of dimensions L×W , L (cid:29) W , pictured
in Fig.1a. For the sake of simplicity, we treat the electric
and heat currents as independent of the x coordinate
along the bar. In layer 1, current is injected at x = −L/2
and drained at x = L/2. In layer 2, the Hall drag voltage
arising across the device, VH and the longitudinal drag
voltage, V(cid:107), are evaluated as
VH =
E(2)
y dy, V(cid:107) =
L
W
E(2)
x dy
(3)
(cid:90) W/2
−W/2
(cid:90) W/2
−W/2
2
The electric and thermal variables may depend on the
transverse coordinate y, see below.
Boundary conditions for a Hall bar require electric cur-
rent being tangential to the side boundaries, y = ±W/2,
and zero temperature imbalance at the ends, x = ±L/2,
reflecting that the current and voltage contacts act as
ideal heat sinks. The electric current parallel to the
boundaries y = ±W/2 gives rise to the Ettingshausen
heat current that may have a component transverse to
the Hall bar. The divergence of this heat current, ap-
pearing on the right hand side of Eq.(2), acts as an effec-
tive boundary delta function source in the heat transport
equations. Boundary conditions can profoundly influence
the symmetry of the resultant drag resistivity, see below.
We consider the case of a spatially uniform Q in both
layers. The ideal heat sinks at x = ±L/2 mean that no
temperature imbalance develops in the x-direction (ex-
cept for some "fringing" heat currents near the contacts
which give a contribution small in W/L (cid:28) 1, which we
will ignore in the following discussion). Since no temper-
ature gradients are sustained in the x-direction for from
the ends, we can reduce our problem Eq.(2) to a quasi-1D
problem with temperature profiles that only depend on
the y-coordinate. As a result, the only heat source arises
from the Ettingshausen effect Q(1)j = (Q(1)
yx j)(cid:98)y.
To describe transport in the presence of such a source,
we will expand temperature variables in both layers in
a suitable orthonormal set of functions. Here it will be
convenient to use eigenstates of the operator ∂2
y with zero
Neumann boundary conditions at y = ±W/2, given by
(cid:19)
(cid:18) 2πn
W
(cid:18) 2π(n + 1
(cid:19)
2 )
y
,
W
un(y) = A cos
y
,
vn(y) = A sin
A = (2/W )1/2, n = 0, 1, 2... From the symmetry of the
source in Eq.(2) we expect δT1,2(y) to be odd in y. Thus
only the functions vn(y) are relevant, giving
δT1,2(y) =
δ T1,2(qn)A sin qny,
qn =
2π(n + 1
2 )
W
.
(cid:88)
qn
nκ1δ T1 + a(δ T1 − δ T2) + λδ T1 = Fn
q2
nκ2δ T2 + a(δ T2 − δ T1) + λδ T2 = 0
q2
and Fn = 2A(−1)nQ(1)
where κ1,2 = κ(1,2)
Eq.(4), we find the temperature profile in layer 2:
xx
yx j. Solving
(4)
δT2(y) =
aFn
L1(qn)L2(qn) − a2 vn(y),
(5)
(cid:88)
n≥0
where Li(qn) = κiq2
n + a + λ (i = 1, 2). Since electron-
lattice cooling is very slow [28, 29], with the correspond-
ing cooling length values in excess of few microns, we
will suppress λ in what follows. Because the boundaries
(2)
For each n we obtain a pair of algebraic equations
3
e2L11/T , and thermal conductivity is κ = L22/T 2. Com-
paring to the heat current due to an applied charge cur-
rent, Eq.(1), we identify L21 = −eQL11.
Onsager reciprocity demands that the cross-couplings
21(−B) where B is the applied magnetic
obey L12(B) = LT
field (note the transposed matrix). In an isotropic sys-
tem the off-diagonal components of L obey L(xy)(B) =
L(yx)(−B). As a result, Onsager reciprocity reduces to
L12(B) = L21(B)
(9)
in an isotropic system. Applying Eq. 9 to Eq. 8 in an
11 QL11∇T.
open circuit, we find E = −e−1∇µ = T −1L−1
For an isotropic system Q = Qxx1 + iQxyσ2, L = Lxx1 +
iLxyσ2, so that [Q, L] = 0, which gives Eq.(1).
Several different regimes arise depending on the rela-
tion between the interlayer cooling length ξ and the bar
width W . Using Eq.(3) and Eq.(1) we obtain
(cid:32)
(cid:33)
(cid:32)
V(cid:107)
VH
=
Rdrag(cid:107)
Rdrag
H
−Rdrag
Rdrag(cid:107)
H
,
(10)
(cid:33)(cid:32)
(cid:33)
I(cid:107)
0
−LG(ξ)
W T κ
giving the magnetodrag and Hall drag resistance values
−G(ξ)
T κ
Q(1)
Q(1)
Rdrag
H =
xy Q(2)
xx , Rdrag(cid:107) =
xy Q(2)
xy ,
(11)
where we used Qxx = Qyy and Qxy = −Qyx for an
isotropic system. For a narrow bar (or, slow cooling),
we have ξ/W (cid:29) 1 and G → 0, giving vanishingly small
H,(cid:107) . For a wide bar (or, fast cooling) we have G → 1
Rdrag
so that Rdrag
H,(cid:107) saturates to a universal value independent
of the interlayer cooling rate. For typical device param-
eters, we estimate ξ ≈ 40 nm at T = 300 K [20]. Since
L, W are a few mircons for typical graphene devices, we
expect them to be firmly in the G = 1 regime, with the
Hall drag and magnetodrag attaining universal values in-
dependent of the electron-electron interaction strength.
To describe the density and B field dependence, we use
a simple model for Q. Measurements indicate[8, 9] that
thermopower and the Nernst effect in graphene are well
described by the Mott formula [33], giving
(cid:32)
(cid:33)
Q =
π2
3e
k2
BT 2ρ
∂[ρ−1]
∂µ
,
ρ =
ρ(cid:107)
ρH
−ρH ρ(cid:107)
,
(12)
with ρ the resistivity, e < 0 the electron charge, and µ the
chemical potential. We use a simple phenomenological
model [34] relevant for classically weak B fields:
ρ0(cid:112)1 + n2/n2
0
ρ(cid:107) =
,
ρH =
−Bn
e(n2 + n2
0)
,
(13)
where ρ0 is the resistivity peak value at the Dirac point,
n is the carrier density, and parameter n0 accounts for
broadening of the Dirac point due to disorder. We ac-
count for disorder broadening of the density of states,
dn/dµ = (n2 + n2
0)1/4(cid:0)2/(π¯h2v2
F )(cid:1)1/2
.
FIG. 2:
(a) Schematic of charge current, temperature gra-
dients, and electric field in the two layers of a Hall bar that
produces Hall drag. (b,c) Density dependence of Hall drag
resistance, predicted from Eqs.(11),(13) for the same param-
eter values as in Fig.1. (d) Density dependence of Qxx, Qxy,
see text.
in the transverse (y-direction) are free, a finite temper-
ature imbalance between the edges can arise, given by
∆T = δT2(y = W/2) − δT2(y = −W/2). We find
∆T = 4A2(cid:88)
ξ = (cid:112)κ1κ2/aκ. We evaluate the sum using the iden-
tity(cid:80)∞
where we defined κ = κ1 + κ2 and a length scale
aQ(1)
yx j
L1L2 − a2 =
1 − tanhπc
n(1 + ξ2q2
q2
n)
(cid:88)
to obtain
Q(1)
yx j
(cid:16)
, (6)
n≥0
n≥0
W κ
8
1
n=0
(n+ 1
2 )4+c2(n+ 1
2 )2 = π2
2c2
πc
∆T =
W Q(1)
yx j
κ
G(ξ), G(ξ) = 1 − 2ξ
W
tanh
. (7)
(cid:17)
(cid:18) W
2ξ
(cid:19)
Connecting ∆T with the drag voltage, and in particu-
lar determining its sign, requires taking full account of
Onsager reciprocity. This analysis is presented below.
In the same way that the applied charge current, j,
in layer 1 causes a heat current (Peltier/Ettingshausen),
a temperature imbalance in layer 2, ∆T , can sustain
voltage drops across the sample (Thermopower/Nernst).
These two effects are related by Onsager reciprocity con-
straints. The cross couplings in the coupled energy and
charge transport equations [32] arise from
(cid:18) −j
(cid:19)
jq
=
(cid:18) eL11/T eL12
L21/T L22
(cid:19)(cid:32) ∇µ
(cid:33)
∇ 1
T
(8)
where L are 2 × 2 matrices and e is the carrier charge.
In this notation, the electrical conductivity equals σ =
H
= (W/L)Rdrag(cid:107)
From Eqs.(11),(12),(13) and the Wiedemann-Franz re-
lation for κ, we obtain ρdrag(cid:107)
and Rdrag
(see Fig.1b,c and Fig.2b,c, respectively).
In that, we
used the parameter values n0 = 1011 cm−2, ρ0 = h
3e2 ,
and a representative temperature, T = 150 K. These
values match device characteristics (disorder broadening,
n0, and peak resistivity, ρ0) described in Ref.[13]. As a
sanity check, we plot the components of Q (in Fig.2d)
which show the behavior near CN matching thermopower
and Nernst effects measured in graphene[8, 9].
Analyzing magnetodrag, we find that ρdrag(cid:107)
peaks at
dual CN, taking on large and negative values (Fig.1b,c).
Magnetodrag peak exhibits a steep B dependence,
ρdrag(cid:107),peak ∝ −B2, bearing a striking resemblance to mea-
surements reproduced in Fig.1d. In particular, our model
explains the negative sign of the measured magnetodrag.
Hall drag is large and sign-changing (see Fig.2b,c), tak-
ing on values consistent with measurements[35]. Interest-
ingly, the map in Fig.2b indicates that the sign of Rdrag
is controlled solely by carrier density in layer 2, breaking
the n1 ↔ n2 symmetry between layers. This behavior
does not contradict Onsager reciprocity, it arises as a
consequence of the asymmetric boundary conditions for
the Hall bar: free boundary at y = ±W/2 and ideal heat
sinks at the ends, δT (x = ±L/2) = 0. This allows for
finite temperature gradients to be sustained across the
bar but not along the bar, see Fig.2a.
H
For other geometries, the temperature gradient can
be obtained by balancing the heat flux due to thermal
conductivity against the net heat flux in the two lay-
ers, (κ1 + κ2)∇δT = D Q(1)j1 (see Eq.(24) of Ref.[22]).
The quantity D can in principle be obtained by solving
heat transport equations. Adopting the same approach
as above, we find a magneto and Hall-drag resistivity
ρdrag =
1
T κ
Q(2)D Q(1), E2 = ρdragj1.
(14)
clarify,
We wish to
in connection to
For isotropic heat flow, D = 1. In this case, since Q(1)
and Q(2) commute, the resulting drag is layer-symmetric,
n1 ↔ n2[22]. In particular, Hall drag for D = 1 vanishes
on the diagonal n1 = −n2. In contrast, for anisotropic
heat flow, such as that discussed above, we expect a
generic tensor D (cid:54)= 1 and thus no layer symmetry.
recent
measurements,[35] that layer symmetry n1 ↔ n2 implies
a swap of current and voltage contacts. Layer symme-
try, which implies D = 1 in Eq.(14), will therefore only
hold for Hall bars equipped with wide voltage contacts,
for which the contact and the bar widths are compa-
rable. This is indeed the case for the cross-shaped de-
vices used in Ref.[13]. However it is not the case for a
Hall bar with noninvasive voltage probes which are much
narrower than the bar width, as assumed in our analysis
above. Noninvasive probes, which have little effect on
4
temperature distribution in the electron system, trans-
late into D (cid:54)= 1 and no layer symmetry.
In summary, magnetic field has dramatic effect on drag
at CN because it induces strong coupling between neu-
tral and charge modes, which are completely decoupled in
the absence of magnetic field in a uniform system. Field-
induced mode coupling leads to giant drag that dwarfs
the conventional momentum drag contribution as well as
a remnant drag due to spatial inhomogeneity[20]. Our es-
timates indicate that these two contributions are orders
of magnitude smaller than the predicted magnetodrag,
which also has an opposite sign. The giant magnetodrag
and Hall drag values attained at classically weak mag-
netic fields, along with the unique density dependence
and sign, make these effects easy to identify in experi-
ment. The predicted magnetodrag is in good agreement
with findings in Ref.[13]. Magnetic field, coupled with
drag measurements at CN, provides a unique tool for
probing the neutral modes in graphene.
We acknowledge useful discussions with A. K. Geim,
P. Jarillo-Herrero, L. A. Ponomarenko, and financial sup-
port from the NSS program, Singapore (JS).
[1] J. Gonzales, F. Guinea, and M.A.H. Vozmediano, Nucl.
Phys. B424, 595 (1994); Phys. Rev. B 59, R2474 (1999).
[2] D. E. Sheehy and J. Schmalian, Phys. Rev. Lett. 99,
226803 (2007).
[3] D. T. Son, Phys. Rev. B 75, 235423 (2007).
[4] O. Vafek, Phys. Rev. Lett. 98, 216401 (2007).
[5] A. B. Kashuba, Phys. Rev. B 78, 085415 (2008).
[6] L. Fritz, J. Schmalian, M. Mueller, S. Sachdev, Phys.
Rev. B 78, 085416 (2008).
[7] M. Mueller, L. Fritz, S. Sachdev, Phys. Rev. B 78, 115406
(2008).
[8] Y. M. Zuev, W. Chang, and P. Kim, Phys. Rev. Lett.
102, 096807 (2009).
[9] P. Wei, W. Bao, Y. Pu, C. N. Lau, and J. Shi, Phys. Rev.
Lett. 102, 166808 (2009).
[10] J. G. Checkelsky and N. P. Ong, Phys. Rev. B 80,
081413(R) (2009).
[11] L. P. Pitaevskii, E.M. Lifshitz, Physical Kinetics (Perga-
mon, Oxford, 1981)
[12] L. Britnell, et al. Science 335, 947 (2012).
[13] R. V. Gorbachev, et al. Nature Physics 8, 896 (2012).
[14] S. Kim, I. Jo, J. Nah, Z. Yao, S. K. Banerjee, and E.
Tutuc, Phys. Rev. B 83, 161401 (2011).
[15] W.-K. Tse and S. Das Sarma, Phys. Rev. B 75, 045333
(2007).
[16] B. N. Narozhny, Phys. Rev. B 76, 153409 (2007).
[17] E. H. Hwang, R. Sensarma, and S. Das Sarma , Phys.
Rev. B 84, 245441 (2011).
[18] N. M. R. Peres, J. M. B. Lopes dos Santos, and A. H.
Castro Neto, Europhys. Lett. 95, 18001 (2011).
[19] M. I. Katsnelson, Phys. Rev. B 84, 041407 (2011).
[20] J. C. W. Song and L. S. Levitov, Phys. Rev. Lett. 109,
236602 (2012).
[21] B. N. Narozhny, M. Titov, I. V. Gornyi, and P. M. Os-
trovsky, Phys. Rev. B 85, 195421 (2012).
[22] J. C. W. Song, D. A. Abanin, L. S. Levitov, Nano Lett.,
5
10.1021/nl401475u (2013).
McEuen, Nature Physics, 9 103 (2013)
[23] N. K. Patel, E. H. Linfield, K. M. Brown, M. Pepper, D.
A. Ritchie, and G. A. C. Jones, Semicond. Sci. Technol.,
12, 309 (1997).
[29] A. C. Betz, S. H. Jhang, E. Pallecchi, R. Ferreira, G.
F´eve, J-M. Berroir, and B. Placais, Nature Physics, 9
109 (2013).
[24] H. Rubel, A. Fischer, W. Dietsche, K. von Klitzing, and
[30] J. M. Ziman, Principles of the Theory of Solids, Cam-
K. Eberl, Phys. Rev. Lett. 78 1763 (1997).
bridge University Press (1979).
[25] M. P. Lilly, J. P. Eisenstein, L. N. Pfeiffer, and K. W.
[31] E. H. Hwang, E. Rossi, and S. Das Sarma Phys. Rev. B
West, Phys. Rev. Lett., 80 1714 (1998).
80, 235415 (2009).
[26] A. Kamenev and Y. Oreg, Phys. Rev. B, 52 7516 (1995).
[27] M. C. Bonsager, K. Flensberg, B. Y.-K. Hu, and A.-P.
Jauho, Phys. Rev. Lett., 77 1366 (1996). The authors
note that Hall drag vanished for systems with inversion
symmetry and when the carriers in the active layer can
be described by a drifted Fermi-Dirac distribution.
[28] M. W. Graham, S-F. Shi, D. C. Ralph, J. W. Park, P. L.
[32] H. B. Callen, Phys. Rev., 73 1349 (1948).
[33] M. Jonson and S. M. Girvin, Phys. Rev. B, 29 1939
(1984).
[34] D. A. Abanin, et. al., Science, 332 328 (2011) and ac-
companying online supplement.
[35] A. K. Geim, private communication
|
1005.4780 | 1 | 1005 | 2010-05-26T10:22:08 | Power laws in surface state LDOS oscillations near a step edge | [
"cond-mat.mes-hall"
] | In this paper we indicate a general method to calculate the power law that governs how electronic LDOS oscillations decay far away from a surface step edge (or any local linear barrier), in the energy range when only 2D surface states are relevant. We identify the critical aspects of the 2D surface state band structure that contribute to these decaying oscillations and illustrate our derived formula with actual examples. | cond-mat.mes-hall | cond-mat |
Power laws in surface state LDOS oscillations near a step edge
Rudro R. Biswas1,3∗ and Alexander V. Balatsky2,3
1Department of Physics, Harvard University, Cambridge, MA 02138
2Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545
3Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545
(Dated: May 25, 2018)
In this paper we indicate a general method to calculate the power law that governs how electronic
LDOS oscillations decay far away from a surface step edge (or any local linear barrier), in the energy
range when only 2D surface states are relevant. We identify the critical aspects of the 2D surface
state band structure that contribute to these decaying oscillations and illustrate our derived formula
with actual examples.
PACS numbers: 03.65.Nk, 07.79.Cz, 73.20.-r, 73.20.At
I.
INTRODUCTION
For over a couple of decades now Scanning-Tunneling
Microscopy (STM) experiments have been used to ob-
serve the effects of perturbations to electronic surface
states, in the form of atomic defects, corrals and step
edges1–4. The quantum electronic response to defects
can give us basic information about the band structure
of the scattered quasiparticles5; it also encodes informa-
tion about their nature and this is useful when probing
correlated phases2,6–8. In this paper, we shall consider
the case of a step edge on a 2D surface and calculate the
spatial decay of standing waves created in the surface
LDOS, far away from the step edge. We shall show, by
a simple process of power counting, that the geometry of
the constant energy cut of the quasiparticle band struc-
ture and a qualitative knowledge of the character of the
quasiparticle wavefunctions provide enough information
to pin down the power with which the LDOS oscillations
decay far away from the step edge.
II. THEORY
We begin by considering a general band structure for
the 2D surface states, whose cross-section at the energy
of observation Eobs is shown in Figure 1. Also shown in
the figure is the orientation of the surface step edge -
parallel to the y-direction. Because of the conservation of
momentum parallel to the edge during a scattering pro-
cess, the incoming and outgoing states must be connected
by straight lines perpendicular to the step edge. Some
such processes are also marked in Figure 1. The arrows
joining the initial and final states denote the wave-vector
of LDOS oscillations that particular scattering process
would give rise to. Obtaining the total LDOS involves
summing up these oscillations. The most coherent con-
tributions to this sum come from regions where the scat-
tering wave-vectors change the slowest as we move par-
allel to the step edge, i.e, changing only the ky of the
scattering states. We denote the 'identifying' scattering
wave vector in each such region as the 'characteristic'
wave vector of that region.
As a very common example, for a circular constant
energy cut as in a 2DEG (Figure 2), the most coherent
contributions come from the scatterings around the di-
ameter - the characteristic wave vector in this case is
thus the diameter, ∆0.
The new electronic LDOS far away from the step edge
is now provided by (below, 'new' refers to the new energy
eigenstates while 'init' and 'fin' refer to the initial and
FIG. 1: (Color online) A constant energy cut of a generic
2D electronic surface state (SS) band structure, taken at the
energy Eobs of an STM probe; on the right is shown the ori-
entation of the surface step edge (or any linear barrier) in
question. Quasiparticles are scattered 'horizontally', preserv-
ing ky. The regions where the scattering wave-vectors vary
the slowest (locally) with ky are shaded – blue for incident
and pink for reflected states. The 'characteristic' scattering
wave vectors are also indicated by arrows and numbers.
final scattering states, respectively):
ψnew2
E
(cid:88)
(cid:88)
(cid:122)
(cid:88)
E
E
ρ(x, E) =
=
=
ψinit + rψfin2 + transmitted from other side
x−independent part
(cid:16)ψinit2 + rψfin2 + transmitted
(cid:105)
(cid:125)(cid:124)
(cid:88)
(cid:104)
+ 2
Re
r ψ
†
init · ψfin
(cid:123)
(cid:17)
E
(1)
Writing the energy-momentum eigenstates as ψk(x) =
χeik·x, where χ denotes an 'internal' part involving the
spin and other internal components, the x-dependent
part of the LDOS can be summarized as
δρ(x, E) ∝(cid:88)(cid:90)
(cid:104)
(cid:16)
†
f · χi
χ
(cid:17)
ei∆kxx(cid:105)
(2)
dky ρ0(ky)Re
r(ky)
0
The sum is over the various regions of coherent scatter-
ing, each one corresponding to a characteristic scattering
vector. The outer limits of these integrals are not impor-
tant as the oscillations there de-cohere rapidly. ρ0(ky)
is a DOS factor (it multiplicatively converts the measure
dky to a product of the length of the band curve enclosed
between ky and ky + dky and the DOS in that region).
The x-dependence of a characteristic oscillation far
away from the step edge may be found from the
above expression by writing down the lowest order ky-
dependencies of the relevant quantities near each charac-
teristic wave-vector (δky is the ky-displacement from the
associated characteristic wave vector):
ρ0(ky) ∼ ρ0δkα
r(ky) ∼ r0δkβ
†
f · χi ∼ δkγ
χ
∆kx ∼ ∆0 + ∆1δkη
(3)
y
y
y
y
(cid:104)
r0 ei(∆0x+∆1µ)(cid:105)
α+β+γ+1
η
Re
Changing the integration variable δky to the variable µ =
δkη
y x in (2) and using (3), we obtain our central result
δρ(x, E) ∝(cid:88) ρ0
(cid:90) dµ
∼(cid:88)ρ0r0 sin(∆0x + φ)
α+β+γ+1
µ
µ
x
η
x(α+β+γ+1)/η
(4)
This asymptotic behavior is correct for x (cid:29) (∆k)−1,
where ∆k is the characteristic size of the region in mo-
mentum space where the scaling laws (3) hold. The
power of decay of the oscillations coming from each char-
acteristic region is thus given by (α + β + γ + 1)/η, which
may be evaluated using our knowledge of the band struc-
ture in that region. Note, however, that we haven't been
able to evaluate the total strength of the scattering pro-
cess which requires a much more detailed calculation in-
cluding evaluating the reflection amplitudes themselves.
This exercise provides us with the combination of possi-
ble power laws we can try to fit actual experimental data
to, if an idea of the band structure exists.
2
III. EXAMPLES
A. 2DEG1
The scattering wave-vector varies slowest around the
equator (see Figure 2). Thus, ∆0 = diameter of circle
= 2kE, α = β = γ = 0 (assuming, quite reasonably, that
the reflection amplitude is nonzero and smooth across
normal scattering). Also, from the geometry of the band,
we get η = 2. Using (4), this tells us that:
δρ(x, E) ∼ sin(∆0x + φ)
x1/2
(∆0 = 2kE)
(5)
FIG. 2: (Color online) The characteristic wave-vector ∆0 in
the case of a circular band (for 2DEGs with rotational invari-
ance)
B. Strong Topological Insulator (circular band cut)
1. Generic barrier
This case is illustrated in Figure 3 and is realized for
the gapless surface states in Strong Topological Insula-
tors like Bi2Se3 and Bi2Te3 (at energies near the Dirac
point). The scattering wave-vector varies slowest around
the equator (as in the 2DEG case), where ∆0=diameter
of circle, α = 0, β = 1 since the reflection coefficient
changes sign9 as one crosses the diameter/case of normal
reflection (can be any odd power; should be linear gener-
ically), γ = 1 because the spins are exactly antiparallel
for scattering states at the diameter and thus the lowest
order overlap is linear in δky, and η = 2 as in the 2DEG
case. This gives rise to:
δρ(x, E) ∼ sin(∆0x + φ)
x3/2
(∆0 = 2kE)
(6)
This result agrees with numerical calculations for partic-
ular cases of the model describing the step edge10.
FIG. 3: (Color online) Constant energy cut of a circular sur-
face band on a STI surface. The spins, indicated as block
arrows, are antiparallel for normal scattering (the character-
istic scattering process for the STI surface state band that is
circular) – the spin overlap magnitude is thus generically a
linear function of the angle of incidence. The same may be
said for the reflection amplitude magnitude which is a certain
gauge is antisymmetric in the angle of incidence.
2.
'Perfect' reflection
The scattering wave-vector varies slowest around the
equator (as in the 2DEG case), where ∆0=diameter of
circle, α = β = 09 (since the reflection amplitude is con-
stant in magnitude near normal incidence), γ = 1 as
argued for the previous case, and η = 2. This gives rise
to:
δρ(x, E) ∼ sin(∆0x + φ)
x
(∆0 = 2kE)
(7)
In the actual case, there will always be a region near
normal incidence where the reflection amplitude will be-
come linear (because it is antisymmetric). This means
that 'very' far away ∼ the inverse of the ky-span of the
region where r is linear, the previous result (6) for the
generic barrier should hold.
C. Bi2Te3 (with hexagonal warping)3
If we are far away from the Dirac point, the surface
band of Bi2Te3 exhibits hexagonal warping11. The fol-
lowing results hold when the STM bias maintains our
observation energy in that regime.
1. Step edge ⊥ ΓM direction
The scattering wave-vector varies slowest around the
equator (as in the 2DEG case), where ∆0=diameter of
3
circle, α = 0, β = 1, γ = 1 and η = 2 exactly as argued
before for the circular STI band. However, the extent of
this region is very small and the scattering is found to be
dominated by processes connecting the hexagonal 'cor-
ners' (marked by bold arrow in Figure 4), with a charac-
3. For the latter case, since
teristic scattering vector knest
the spin states have a finite overlap with each other at
the hexagon corners11, we have γ = 0. Also, assuming
that the reflection coefficient is smooth for the relevant
scattering processes, β = 0. Finally, α = 0 (DOS is finite
and smooth) and the overwhelmingly 'linear' nature of
the bands yield η = 1. Putting these together, we obtain
the observed variation3
δρ(x, E) ∼ sin(knestx + φ)
x
(8)
FIG. 4: (Color online) Scattering processes from a step edge
on Bi2Te3 oriented perpendicular to the ΓM direction, in the
energy range where the band exhibits hexagonal warping. The
scattering vector varies linearly near knest, as indicated by the
angle made by the dotted lines, leading to η = 1. The weaker
characteristic scattering process is denoted by the dotted ar-
row. Spins are indicated as block arrows.
2. Step edge ⊥ ΓK direction
The wave-vectors vary slowest around the equator (as
in the 2DEG case) and from the considerations of the
cicular STI surface band above, we can conclude that
there should be characteristic oscillations at 2kΓK decay-
ing as x−3/2 (or 1/x for a 'perfect' reflector).
In this
case, because of the larger extent of the characteristic
scattering region around the diameter, these oscillations
may be strong and observable. Because of the presence
of the linear band shape with larger spectral presence
and reflection strengths near the corners, we can also
observe LDOS oscillations from the corner→corner scat-
tering processes, decaying as 1/x. Of course, from our
simple calculation we cannot reliably predict which of
the two processes discussed above have the stronger sig-
nature.
4
over the long-distance behavior) for features at the 'char-
acteristic' scattering vectors. The FT near those points
can then be fitted to the abovementioned power laws (or
a logarithm, for the case of a 1/x decay) to recover the
spatial decay power laws.
V. CONCLUSION
We have outlined a method to calculate the possible
oscillatory power laws governing the decay of LDOS per-
turbations next to a step edge or some such linear barrier
on a surface, in the energy range when only electronic
surface states are relevant and the surface band struc-
ture is qualitatively known. To find these laws we need
to identify the characteristic scattering regions (Figure
1), compute the scaling powers of the relevant quantities
(3) and from that obtain the possible oscillatory powers
(4).
Acknowledgments
This work was supported by the US DOE thorough
BES and LDRD and by the University of California
UCOP program T027-09. We would also like to acknowl-
edge illuminating discussions with M. Crommie, D. Hal-
dane, H. Manoharan and members of M. Z. Hasan and
A. Yazdani's research groups.
FIG. 5: (Color online) Scattering processes from a step edge
on Bi2Te3 oriented perpendicular to the ΓK direction, in the
energy range where the band exhibits hexagonal warping.
Spins are indicated as block arrows.
IV.
ISOLATING CONTRIBUTIONS USING THE
1-D FOURIER TRANSFORM
The Fourier Transform of the LDOS data may be used
to observe signatures from more than one set of scattering
processes. For oscillations decaying as sin(Kx + φ)/xn,
scaling analysis tells us that the Fourier transform looks
like F (k) ∼ k ∓ Kn−1, when k ∼ ±K. Thus, one way
to look for contributions to these oscillations would be
to scan the 1-D Fourier transform of the LDOS (taken
∗ Electronic address: rrbiswas@physics.harvard.edu
1 M. F. Crommie, C. P. Lutz, and D. M. Eigler, Nature 363,
524 (1993).
2 A. Yazdani, B. A. Jones, C. P. Lutz, M. F. Crommie, and
D. M. Eigler, Science 275, 1767 (1997).
3 Z. Alpichshev, J. G. Analytis, J.-H. Chu, I. R. Fisher, Y. L.
Chen, Z. X. Shen, A. Fang, and A. Kapitulnik, Phys. Rev.
Lett. 104, 016401 (2010).
4 A. Richardella, P. Roushan, S. Mack, B. Zhou, D. A.
Huse, D. D. Awschalom, and A. Yazdani, Science 327,
665 (2010).
5 L. Petersen, P. T. Sprunger, P. Hofmann, E. Laegsgaard,
B. G. Briner, M. Doering, H.-P. Rust, A. M. Bradshaw,
F. Besenbacher, and E. W. Plummer, Phys. Rev. B 57,
R6858 (1998).
6 J. E. Hoffman, E. W. Hudson, K. M. Lang, V. Madhavan,
H. Eisaki, S. Uchida, and J. C. Davis, Science 295, 466
(2002).
7 J. E. Hoffman, K. McElroy, D. H. Lee, K. M. Lang,
H. Eisaki, S. Uchida, and J. C. Davis, Science 297, 1148
(2002).
8 S. H. Pan, E. W. Hudson, K. M. Lang, H. Eisaki, S. Uchida,
and J. C. Davis, Nature 403, 746 (2000).
9 R. R. Biswas and A. V. Balatsky, arXiv:0912.4477 (2009).
10 X. Zhou, C. Fang, W.-F. Tsai, and J. Hu, Phys. Rev. B
80, 245317 (2009).
11 L. Fu, Phys. Rev. Lett. 103, 266801 (2009).
|
1104.3104 | 1 | 1104 | 2011-04-15T16:28:18 | Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature. | cond-mat.mes-hall | cond-mat | Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene
Leandro M. Malard1, Kin Fai Mak1, A. H. Castro Neto2,3, N. M. R. Peres4, and
Tony F. Heinz1
1Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New York, New York
10027, USA
2Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
3Graphene Research Centre, National University of Singapore, 2 Science Drive 3, 117542, Singapore
4Departamento de Física e Centro de Física, Universidade do Minho, P-4710-057 Braga, Portugal
(April 15, 2011)
The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions
using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly
with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with
increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions
by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter
dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed
by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes
can described in terms of a time-varying electronic temperature.
PACS: 78.67.Wj, 78.47.D-, 78.47.jb
The optical properties of graphene have been the
subject of much attention [1-3]. Interest in this topic is
generated both by the insight that the optical response of
graphene provides into the nature of its excited states and
their interactions and by the importance of understanding
graphene’s optical
response
for emerging photonic
applications [2, 4]. The response of graphene to excitation
by femtosecond laser pulses has attracted particular interest
[5-11]. Probing dynamics on the femtosecond time scale
provides
information about electron-electron, electron-
phonon, and phonon-phonon interactions and also has
important
implications
for
the behavior of
recently
developed ultrafast photonic devices [2, 4].
To date all ultrafast pump-probe measurements of
graphene have observed an induced bleaching of the
absorption under optical excitation [7-9]. This behavior
arises from Pauli blocking of the strong inter-band optical
transitions [7-9] and is expected for electronic temperatures
sufficiently high to induced filling of the states. The optical
response of graphene arises, however,
from
two
fundamental processes: inter-band and intra-band optical
transitions [3, 12-14]. Here we report observation of a
dominant intra-band contribution to the transient optical
response, with a corresponding enhanced absorption. We
this effect
identify
through probing freely suspended
graphene samples at relatively low pump fluence. With
increasing pump fluence, the transient optical response
exhibits a crossover from enhanced absorption to bleaching
as Pauli blocking of inter-band transitions becomes more
prominent.
We explain the observed temporal evolution of the
optical absorption for all pump fluences within
the
framework of a thermalized electronic energy distribution
that is in equilibrium with a set of strongly coupled optical
phonons. Cooling of this subsystem, and the decrease in
electronic temperature, is controlled by energy loss of the
strongly coupled optical phonons to lower energy phonons
through anharmonic decay. A fluence-independent time
constant of 1.4 ps is deduced, which is consistent with
recent time-resolved Raman scattering measurements of the
cooling of zone-center optical phonons [15]. In addition to
the importance of these measurements for understanding
ultrafast carrier dynamics and applications in ultrafast
photonics,
response at high carrier
intra-band
the
temperature provides insight into carrier dynamics in a
regime relevant to high-field charge transport in graphene
[16-19]. In particular, our experiments reveal a sharp
increase in the Drude scattering rate with increasing
temperature of the electrons and optical phonons, as also
suggested by high-field electrical transport measurements in
carbon nanotubes [20, 21] and graphene [16-19]. Our
results shown to be compatible with the behavior expected if
electron-optical phonon scattering plays a dominant role in
determining
the carrier scattering rate
in
this high
temperature regime.
In our experimental study we made use of freely
suspended graphene samples. Such samples allow us to
eliminate both accidental doping effects and energy transfer
associated with the substrate. We prepared exfoliated
graphene samples that were freely suspended over trenches
patterned in transparent SiO2 substrates [22]. The substrates,
with trenches of width 4 – 5 µm and depth of ~3 µm (as
characterized by atomic force microscopy), were carefully
cleaned by chemical etching (nanostrip) before we deposited
graphene by mechanical exfoliation from kish graphite.
Areas of graphene of single-layer thickness were identified
by optical microscopy and further characterized by Raman
spectroscopy [22]. The low doping levels of the samples
were reflected in the large (~15 cm-1) width of the G-mode
and characteristic asymmetry of the 2D-mode, while the low
level of defects was indicated by the absence of the
disorder-induced D-mode.
The optical pump-probe measurements were
performed using a modelocked Ti-sapphire laser producing
pulses of ~300-fs duration at an 80-MHz repetition rate. The
800-nm wavelength output of the laser provided the probe
pulses, while radiation at 400 nm, obtained by frequency
doubling in a β-barium borate (BBO) crystal, served as the
pump excitation. Both the pump and probe beams were
focused onto the samples with a single 40× objective to
yield Gaussian spots of comparable widths of ~1.5 µm
(FWHM). The absorbed pump fluence was determined
using the absorbance of graphene at 400 nm (1.8πα = 4.14
% [23]). To account for the spatial variation of the pump
and probe beams, the effective fluence was determined by
weighting the absorbed probe fluence using the spatial
1
profile of the probe beam. Effective absorbed fluences F
4.0 µJ/cm2 were
between
0.5
and
investigated
experimentally. We note that over this range of pump
fluences, saturation of absorbance in graphene at the pump
wavelength
pump-probe
[4]. The
negligible
is
measurements were performed by modulating the pump
laser at 20 kHz and detecting the synchronous change in
probe transmission. The induced modulation of the probe
beam for the lowest pump fluence was ~10-6. For a
suspended thin film of material like our graphene sample,
the fractional change in transmittance,
, is given by
the change in the sample absorbance
. The later is
proportional to the change in the real part of the optical
, according
sheet conductivity of graphene,
to
[14]. We can
therefore directly
convert our experimentally observed change in transmission
into a fundamental material property of the graphene,
namely,
.
Figure 1(a) shows the measured transient response
of graphene for a comparatively low absorbed pump fluence
of F = 0.5 µJ/cm2. An increase in the optical conductivity
(enhanced absorption) is seen. The rise time of this
response is comparable to our experimental time resolution,
while the relaxation can be fit to a single exponential decay
with a time constant of τexp = 3.1 ps.
FIG. 1 (color online): Measured dynamics (closed circles) of
the transient optical conductivity of graphene for excitation
with different absorbed pump fluences F: (a) 0.50 µJ/cm2,
(b) 2.03 µJ/cm2, (c) 3.04 µJ/cm2, and (d) 4.06 µJ/cm2. The
red curves are fits based on the model described in the text,
which include both intra- and inter-band contributions to the
optical response.
To analyze our data, we consider models for the
optical conductivity of graphene with the electronic system
described by a Fermi-Dirac distribution at (electronic)
temperature T. The assumption of a thermalized energy
distribution for the electronic excitations is justified by the
time resolution of >100 fs in our measurements. On this
time scale, the excited electrons and holes are equilibrated
with one another, as well with the strongly coupled optical
phonons (near the Γ- and K-points) [5, 24].
The predicted change in the optical conductivity of
graphene under excitation arises from both intra- and inter-
band contributions,
. For the
case of thermalized electronic energy distributions relevant
in our case, the optical response of graphene has been
examined in several theoretical investigations [3, 12, 13].
Within a picture of non-interacting electrons, the induced
change in the real part of the optical sheet conductivity
follows directly from the corresponding changes in the intra-
and inter-band terms:
(1)
Here
denotes the photon energy of the probe beam, and
Γ is the carrier scattering rate. For our suspended graphene
samples, we have negligible doping and take the chemical
potential to be at the Dirac point. We also neglect any
transient separation of the chemical potentials for the
electrons and holes. While a dynamical separation of the
chemical potentials is common in semiconductors under
ultrafast excitation, on the relevant time scale the effect is
expected to be insignificant in graphene because of the
presence of rapid Auger processes for this zero-gap material
[4, 11].
The photo-induced
the optical
in
change
conductivity in Eqn. (1) from intra-band optical transitions,
, is positive in sign. The enhanced conductivity
arises from the presence of additional free carriers after
optical excitation and scales linearly with the electronic
temperature T. The inter-band term
yields a
negative contribution to the conductivity, a bleaching of the
absorption, from Pauli blocking of the strong inter-band
transitions at the photon energy
. In our regime of
>> kBT , the fractional change in the inter-
band conductivity is slight and varies nearly exponentially
in T. Accordingly, the intra-band contribution dominates at
comparatively low temperatures (low fluence), but, as
shown in Fig. 2, is overwhelmed by the inter-band terms as
the temperature increases. Thus the transient increase in
absorption seen in Fig. 1(a) for low pump fluence reflects
the change in intra-band optical response.
In order to apply the analysis of graphene optical
response presented in Eqn. (1) to our experiment, we
introduce a simple model to describe the temporal evolution
of the electron temperature T(t) induced by the pump laser.
As we shall see, this treatment predicts transient optical
conductivities compatible both with the low-fluence data
already presented and the high-fluence response discussed
below. To describe T(t), we first note that on the time scale
of our measurement, the deposited energy from the pump
pulses rapidly equilibrates among the electronic excitations
and the strongly coupled optical phonons [5, 24]. Energy
then leaves this coupled subsystem through anharmonic
decay of the phonons on the picosecond time scale, which
2
we describe phenomenologically by an effective phonon
lifetime τph [25]. To determine the resulting electronic
temperature T(t) we need to know the heat capacity of the
sub-system consisting of the electrons and the strongly
coupled phonons. For this purpose, we use an Einstein
model consisting of two phonon modes, the Γ- and K-point
phonons. Since only a small part of the phonon branch gets
populated, we considered only a fraction of the graphene
Brillouin zone to obtain the phonon heat capacity. The
fraction is determined by comparing results from [24] and
the initial condition is fixed by the absorbed fluence F. (For
details of this analysis, please refer to the Auxiliary
Materials [26].) The electronic contribution to the heat
capacity is minor and is neglected. Using this heat capacity,
we the find T(t) for any given excitation condition and,
using Eqn. (1), then obtain the temporal evolution of the
optical conductivity. In fitting our results, we treating the
phonon lifetime τph and the Drude scattering rate Γ as
adjustable parameters. As we discuss below, we use an
effective scattering rate Γ that depends on the pump fluence,
but is independent of time, to account for the variation of the
scattering rate with the temperature of the electrons and
optical phonons.
Fig. 2 (color online): Change in the optical conductivity of
graphene as a function of electronic temperature calculated
from Eq. (1). Black and red curves show the expected
contributions from intra- and inter-band terms, respectively.
The blue curve shows the total response.
The measured
the optical
time evolution of
conductivity in Fig. 1(a) is reproduced well with this model.
We use an effective scattering rate of Γ = 27 meV and a
phonon lifetime of τph =1.4 ps. This lifetime differs
significantly from time constant (τexp = 3.1 ps) of the
conductivity transient, a difference that reflects the strong
temperature dependence of the phonon heat capacity: The
electronic temperature, which tracks that of the strongly
coupled optical phonons and is described by τexp, falls more
slowly than the energy content of the optical phonons,
which is characterized by τph. The inferred phonon lifetime
of τph =1.4 ps, we note, lies between that obtained by time-
resolved Raman scattering measurements for graphite (2.2
ps) [24] and for graphene (1.2 ps) [15]. The slightly longer
phonon lifetime compared to that measured for graphene
[15] is attributed to the fact that our graphene samples are
suspended, thus eliminating
possible decay channels
involving the generation with surface polar phonons in the
substrate [16, 17, 19].
At higher pump fluences (and, correspondingly,
higher electronic temperatures), the optical conductivity is
expected to decrease as state filling of the inter-band
transitions begins to dominate the transient response (Fig.
2). The measured conductivity transients at higher pump
fluence are shown in Fig. 1 (b-d). With increasing pump
fluence, the initial response is indeed negative. At later
times when the electronic temperature drops, the intra-band
contribution becomes dominant and a positive conductivity
change is observed.
The experimental data of Fig. 1(b-d) can be fit (red
curves) with the same model of the electronic temperature
described above, but now with the inclusion of the inter-
band optical response of graphene. Thus model can then
accurately describe
the dynamics of
the conductivity
transients at all fluences [Fig. 1(a-d)]. In this fitting process,
we use a single, fluence-independent parameter of τph =1.4
ps for the optical phonon lifetime. This parameter reflects
the anharmonic decay rate of these optical phonons. It
should not increase with pump fluence unless the excitation
of the resulting phonon decay modes also increased
significantly [27], which is not expected this regime. On the
other hand, the fitting procedure implies that the effective
carrier scattering rate Γ increases with pump fluence. The
inferred variation of Γ is shown in Fig. 3 as a function of
absorbed fluence (bottom scale) and of the peak electronic
temperature (top scale) in our model. At high fluence,
corresponding to a peak temperature of 1,700 K, we find Γ
= 52 meV. Both this rate and that inferred for lower fluences
are significantly higher than the scattering rates implied by
conventional transport measurements [28] obtained for a
more modest temperature range.
To understand the origin of the enhanced scattering
rate, recall that the electron-phonon coupling in graphene is
especially strong for the optical phonon modes located at the
center and edge of the Brillouin zone [5, 25]. This coupling
is not, however, important for conventional low-bias charge
transport measurements at room
temperature. In
this
conventional regime, the optical phonons are not thermally
excited and cannot be absorbed in a scattering event, while
the electron energy is too low to scatter through the
emission of optical phonons. This situation changes when
the temperature of the electrons and optical phonons
becomes comparable to that characterizing the optical
phonon,
[20, 21]. Electron scattering with optical
phonons is then allowed and the contribution of this
scattering process to the temperature dependence of the
Drude is significant [29].
To obtain specific predictions for the increased
Drude scattering rate Γ from electron – optical phonon
interactions, we consider the zone-center and zone-edge
phonons to be dispersionless branches with energies of 200
meV and 150 meV, respectively. We then can then
calculate (see Auxiliary Materials [26]), the expected
temperature dependence of Γ from electron- optical phonon
scattering. As shown in Fig. 3, this contribution increases
nearly linearly with T for the relevant temperatures. By
using published values for the electron-phonon coupling for
both the zone-center [30] and zone-edge [31] optical
phonons, we obtain semi-quantitative agreement with the
experimental results for Γ as a function of pump fluence.
Better agreement is not anticipated, since the treatment
involves several significant simplifications. We first note
that the deduced effective Drude scattering rate Γ actually
3
corresponds to fitting the response over a range of electronic
temperatures. Here we assume that the result is dominated
by the behavior near the peak electronic temperature. More
elaborate modeling could take this effect into account. In
terms of
the optical
the underlying description of
conductivity at high temperature, our treatment could be
improved by a more detailed analysis of the different
phonon modes, considered here as two dispersionless
the scattering process. More
in
branches,
involved
examine possible
should
fundamentally, one
also
contributions
to Γ
from electron-electron
scattering
processes [32], which are known to influence the dc
conductivity [33]. Finally, at high electronic temperatures
(T > 1600K), the experimental values for Γ level off with
increasing T. This effect is absent in the model and suggests
that screening of the electron interactions [34] may play a
significant role in this regime of high carrier densities.
Fig. 3 (color online): Drude scattering rate
(closed
circles) as a function of absorbed pump fluence (bottom
scale) and the inferred peak electronic temperature (top
scale). The points are inferred from modeling of the
experimental transient optical response of the graphene
sample. The black line corresponds to the predicted
temperature dependence of
arising from electron- optical
phonon interactions, as described in the text and in the
Auxiliary Materials [26].
An interesting point of comparison for our results
is with those obtained in high-field dc transport studies. We
find that the values for Γ deduced here for high electronic
temperatures are also broadly consistent with those obtained
in high-field transport measurements in metallic carbon
nanotubes at current saturation [20, 21]. In this regime,
electron- optical phonon scattering is also considered to be
the dominant contribution to Γ. For high-bias transport
measurements in graphene [16, 17, 19], the carrier scattering
rate is also significantly enhanced compared to the low-field
behavior. This effect has, however, been attributed to
interaction with of the carriers with polar phonons in the
substrate on which the graphene is deposited. Our results
imply that even for suspended graphene, which lacks these
substrate-mediated interactions, the scattering rate will be
strongly enhanced at elevated electronic temperatures. This
effect will places a fundamental limit on current flow in
graphene at electrical high bias.
In conclusion, we have examined ultrafast carrier
dynamics in freely suspended graphene samples by optical
pump-probe measurements. A crossover of the graphene
optical conductivity transients from enhanced to decreased
absorption is observed as the pump fluence is increased.
This behavior can be understood as the result of the
existence of both intra- and inter-band contributions to the
optical response of graphene. Analysis of the data implies an
optical phonon lifetime of 1.4 ps and enhanced carrier
scattering rates at high electronic temperatures. Our
experiment demonstrates the importance of free carrier
absorption in the visible spectral range for graphene under
non-equilibrium conditions and opens up new opportunities
for probing fundamental charge transport properties of this
2-dimensional system by means of optical measurements.
We thank Drs. Y. Wu, M. Koshino, D. Song and
H. Yan for fruitful discussions and C. H. Lui for sample
preparation. We acknowledge support from the Nanoscale
Science and Engineering Initiative of the National Science
Foundation and from the MURI program of the Air Force
Office of Scientific Research. AHCN acknowledges the
partial support of the U.S. DOE under grant DE-FG02-
08ER46512, and ONR grant MURI N00014-09-1-1063. LM
acknowledges support from the CNPq program in Brazil.
[1] A. H. Castro Neto et al., Rev. Mod. Phys. 81, 109 (2009).
[2] F. Bonaccorso et al., Nat. Photonics 4, 611 (2010).
[3] N. M. R. Peres, Rev. Mod. Phys. 82, 2673 (2010).
[4] Z. P. Sun et al., ACS Nano 4, 803 (2010).
[5] T. Kampfrath et al., Phys. Rev. Lett. 95, 187403 (2005).
[6] M. Breusing, C. Ropers, and T. Elsaesser, Phys. Rev. Lett. 102,
086809 (2009).
[7] P. A. George et al., Nano Lett. 8, 4248 (2008).
[8] D. Sun et al., Phys. Rev. Lett. 101, 157402 (2008).
[9] R. W. Newson et al., Opt. Express 17, 2326 (2009).
[10] C. H. Lui et al., Phys. Rev. Lett. 105, 127404 (2010).
[11] T. Winzer, A. Knorr, and E. Malic, Nano Lett. 10, 4839
(2010).
[12] N. M. R. Peres, F. Guinea, and A. H. Castro Neto, Phys. Rev.
B 73, 125411 (2006).
[13] L. A. Falkovsky, and A. A. Varlamov, Eur. Phys. J. B 56, 281
(2007).
[14] K. F. Mak et al., Phys. Rev. Lett. 101, 196405 (2008).
[15] K. Kang et al., Phys. Rev. B 81, 165405 (2010).
[16] I. Meric et al., Nat. Nano. 3, 654 (2008).
[17] M. Freitag et al., Nano Lett. 9, 1883 (2009).
[18] A. Barreiro et al., Phys. Rev. Lett. 103, 076601 (2009).
[19] A. M. DaSilva et al., Phys. Rev. Lett. 104, 236601 (2010).
[20] J. Y. Park et al., Nano Lett. 4, 517 (2004).
[21] E. Pop et al., Phys. Rev. Lett. 95, 155505 (2005).
[22] S. Berciaud et al., Nano Lett. 9, 346 (2009).
[23] K. F. Mak, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 106,
046401 (2011).
[24] H. Yan et al., Phys. Rev. B 80, 121403 (2009).
[25] N. Bonini et al., Phys. Rev. Lett. 99, 176802 (2007).
[26] See EPAPS Document for more information.
[27] I. Chatzakis et al., submitted (2011).
[28] K. I. Bolotin et al., Phys. Rev. Lett. 101, 096802 (2008).
[29] T. Stauber, N. M. R. Peres, and A. H. Castro Neto, Phys. Rev.
B 78, 085418 (2008).
[30] A. H. C. Neto, and F. Guinea, Phys. Rev. B 75, 045404
(2007).
[31] M. Lazzeri et al., Phys. Rev. B 78, 081406 (2008).
[32] E. H. Hwang, B. Y. K. Hu, and S. Das Sarma, Phys. Rev. B
76, 115434 (2007).
[33] A. A. Kozikov et al., Phys. Rev. B 82, 075424 (2010).
[34] E. H. Hwang, and S. Das Sarma, Phys. Rev. B 79, 165404
(2009).
4
Auxiliary Material
Observation of Intra- and Inter-band Transitions in the
Optical Response of Graphene
Leandro M. Malard1, Kin Fai Mak1, A. H. Castro Neto2,3, N. M. R. Peres4, and
Tony F. Heinz1
1Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New
York, New York 10027, USA
2Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215,
USA
3Graphene Research Centre, National University of Singapore, 2 Science Drive 3, 117542, Singapore
4Departamento de Física e Centro de Física, Universidade do Minho, P-4710-057 Braga, Portugal
1) Determination of the electronic temperature
Here we describe the model employed for the heat capacity of the strongly coupled
optical phonons. These excitations are assumed to be in thermal equilibrium with the
electronic excitations, but, because of the very low heat capacity of electronic
excitations in graphene, the heat capacity is dominated by the phonons. Knowledge
of this heat capacity then allows us to convert the experimental value of the absorbed
pump fluence into the electronic temperature of this subsystem. With the temperature
in hand, we predict the optical response from Eq. (1) of the main text to calculate for a
comparison with the experimental data.
Strong electronic coupling is present for the zone-center phonons (G band, energy of
200 meV) and the zone-edge phonons (D band, energy of 150 med) [A1, A2, A3].
Using the Einstein model for heat capacity including these two phonon modes, we
obtain for the energy density (per unit area) as a function of temperature [A4]:
5
. (E1)
Here A is the Brillouin zone area, f is the fraction of Brillouin zone filled by the G and
D optical phonons and
denotes the G or D phonon energy. We determined f in
Eq. (E1) by comparison with a previous experiment in which transient phonon
temperatures for femtosecond laser excitation of graphite were determined by time-
resolved Raman scattering [A5, A6]. Fitting these earlier measurements to a
polynomial yields the following relation between the absorbed fluence (or energy
density) per graphene layer and the temperature:
. (E2)
We find the fraction f by comparing Eq. (E1) and (E2). Eq. (E1) then yields the
energy density as a function of temperature, even for temperatures below the range
for which the experimental data from the earlier experiments are available.
To model the temporal evolution of the sub-system of the electronic excitations and
the strongly coupled phonons, we assume that the energy relaxes as a rate of 1/τph
through the anharmonic decay, with Eq. (E1) yielding the variation of the
temperature. This temperature dynamics is then insert in Eq. (1) from the main text of
the paper to fit our pump-probe dynamics experiment. Because of the non-linear
relationship between the energy density and temperature, the decay time of these two
quantities are not the same, as can see in Fig. S1.
6
Figure S1: (color online) Temporal evolution of the energy density (black) and
temperature (red) calculated for the case of an absorbed fluence of 0.5
. The
decay times for the energy density and temperature are, respectively, 1.4 and 3.1 ps.
2) Calculation of the electronic scattering rate in graphene at high temperatures
The intra-band contribution to the optical conductivity scales with the electron
scattering rate Γ. For the regime of temperature of the electrons and strongly coupled
optical phonons, we expect that scattering of the electrons by these phonons will
contribute significantly to the overall scattering rate Γ. Here we calculate this
contributions and find that it yields a rate similar to that inferred from the experiment.
As above, we model the strongly coupled phonons by two branches of dispersionless
optical phonons, the 200 meV zone-center and 150 meV zone-edge phonons.
7
The self-energy of the electrons in graphene due to optical phonons is given by [A7]:
1
1
9
2
N c
β
Q , iωn − iνm ) , [E3]
0 ( k −
D0 (iνm )
Gbb
∑
m
Σ( k , iωn ) / = −
∂t
⎛
⎜
∂a
⎝
2
⎞
⎟
⎠
M cω0
∑
Q→
where
is the electron-phonon coupling as defined in Ref. [A8],
is the
€
carbon-carbon distance,
is the hopping in the tight-binding model for graphene, MC
is the carbon mass,
is the phonon frequency. All the other parameters are equally
defined by Ref. [A7]. After performing the Matsubara summation, the imaginary part
of the self-energy is given by
1
9π
2
∂t
ℑΣ( k , iωn ) / = −
⎛
⎞
∑
⎜
⎟
4
N c
M cω0
∂a
⎝
⎠
Q
] δ(ε k −ε k −
[
Q + ω0 )
+ n B (ω0 ) + n F (ε k −
Q )
] δ(ε k −ε k −
[
+ n B (ω0 ) + 1 − n F (ε k −
Q )
Q − ω0 )
[
] δ(ε k +ε k −
Q )
+ n B (ω0 ) + n F (−ε k −
Q + ω0 )
[
] δ(ε k +ε k −
Q − ω0 ),
Q )
+ n B (ω0 ) + 1 − n F (−ε k −
where nB and nF are the Bose and Fermi distribution functions,
[E3]
and
€
. The two first terms are intra-band scattering processes and the last two
are inter-band ones.
The scattering rate is obtained from
. [E4]
To compute
, we need to solve the following integrals appearing in Eq. [E3]:
8
[E5]
where
. The
-functions in Eq. [E3] guarantee that we can replace
in the Fermi functions with
for the first and second integral, and with
in the fourth one. The third integral does not contribute to the scattering
rate, since its argument is always positive. Computing the three integrals, we find that
the scattering rate of an electron with momentum
has, as a consequence of phase-
space restrictions, different forms for different energy ranges:
1. For
:
2. For
:
where C is given by
[E6]
[E7]
[E8]
9
and
. The electron phonon couplings
used for our
calculations are given by
[A8] and
[A9] for the zone-center and zone-edge phonons, respectively.
Now we need to average the energy dependent scattering rate given by Eq. [E6-E7] to
find the average scattering rate [A10]:
[E9]
where
is the density of states of graphene.
Finally to compute the results for the temperature dependence of the scattering rate
shown in Fig. 3 of the main manuscript, we summed the contributions from the two
optical phonon branches:
[E10]
References:
[A1] – S. Piscanec et al., Phys. Rev. Lett. 93, (2004).
[A2] – M. Lazzeri and F. Mauri, Phys. Rev. B 73, 165419 (2006).
[A3] – N. Bonini et al., Phys. Rev. Lett. 99, 176802 (2007).
[A4] – N. W. Ashcroft and N. D. Mermin, Solid State Physics (Thomson, 1976).
[A5] – H. Yan et al., Phys. Rev. B 80, 121403R (2009).
[A6] – C. H. Lui et al., Phys. Rev. Lett. 105, 127404 (2010).
[A7] – T. Stauber, N. M. R. Peres and A. H. Castro Neto, Phys. Rev. B 78, 085418
(2008).
[A8] – A. H. Castro Neto and F. Guinea, Phys. Rev. B 75, 045404 (2007).
[A9] – M. Lazzeri et al., Phys Rev. B. 78, 081406R (2008).
[A10] – Paul Harrison, Quantum Wells, Wires and Dots: theoretical and
computational physics of semiconductor nanostructures (Wiley, 2005).
10
|
1508.04433 | 2 | 1508 | 2015-10-29T18:27:09 | Helical Quantum Edge Gears in 2D Topological Insulators | [
"cond-mat.mes-hall",
"cond-mat.str-el"
] | We show that two-terminal transport can measure the Luttinger liquid (LL) parameter $K$, in helical LLs at the edges of two dimensional topological insulators (TIs) with Rashba spin-orbit coupling. We consider a Coulomb drag geometry with two coplanar TIs and short-ranged spin-flip inter-edge scattering. Current injected into one edge loop induces circulation in the second, which floats without leads. In the low-temperature ($T \rightarrow 0$) perfect drag regime, the conductance is $(e^2/h)(2 K + 1)/(K + 1)$. At higher $T$ we predict a conductivity $\sim T^{-4K+3}$. The conductivity for a single edge is also computed. | cond-mat.mes-hall | cond-mat |
Helical Quantum Edge Gears in 2D Topological Insulators
Yang-Zhi Chou,1, ∗ Alex Levchenko,2 and Matthew S. Foster1, 3
1Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA
2Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
3Rice Center for Quantum Materials, Rice University, Houston, Texas 77005, USA
(Dated: September 11, 2018)
We show that two-terminal transport can measure the Luttinger liquid (LL) parameter K, in
helical LLs at the edges of two-dimensional topological insulators (TIs) with Rashba spin-orbit
coupling. We consider a Coulomb drag geometry with two coplanar TIs and short-ranged spin-flip
interedge scattering. Current injected into one edge loop induces circulation in the second, which
floats without leads.
In the low-temperature (T → 0) perfect drag regime, the conductance is
(e2/h)(2K + 1)/(K + 1). At higher T we predict a conductivity ∼ T −4K+3. The conductivity for a
single edge is also computed.
PACS numbers: 71.10.Pm, 72.15.Nj, 74.25.F-
The edge states that encircle two-dimensional (2D)
topological insulators (TIs) realize a novel electronic heli-
cal Luttinger liquid (HLL) phase [1 -- 3]. Distinct from an
ordinary one-dimensional (1D) quantum wire and from a
quantum Hall edge, a helical edge consists of two coun-
terpropagating modes forming a Kramers pair. The left-
and right-moving channels interact through Coulomb re-
pulsion, but time reversal symmetry protects the edge
from the opening of a gap and from Anderson localization
due to impurities. The combination of topological pro-
tection and electron correlations implies that a TI edge
is an ideal Luttinger liquid at low temperatures [4, 5].
Experimental evidence for helical edge states in HgTe
[6] and InAs/GaSb [7] includes a quantized conductance
G ≃ 2e2/h [7, 8].
In the absence of electrical contacts and magnetic
fields, a HLL forms a closed, unbreakable loop. This
topology of the edge has so far received little atten-
tion.
In this Letter, we propose a TI device geome-
try in which edge loops rotate as interlocking "gears"
through Coulomb drag [9 -- 13]. Our main result is that
the strength of electron correlations encoded in the Lut-
tinger parameter can be directly obtained in such a device
using a two-terminal dc conductance measurement.
Correlations are generically strong in 1D electron fluids
because two particles cannot exchange positions without
scattering or tunneling. These correlations are encoded
in the Luttinger parameter K [14]. Measuring K in a
nontopological 1D electronic system (or "wire") is pos-
sible but delicate. For instance, the zero-temperature
(T = 0) dc transport through a perfectly clean wire gives
a quantized conductance independent of K [15 -- 17]. In a
long wire, disorder tends to induce Anderson insulating
behavior. At temperatures T & vkF /kB, inelastic scat-
tering due to irrelevant umklapp interactions gives a con-
ductivity that depends on T through a power law [18];
here v and kF , respectively, denote the charge velocity
and Fermi wave vector. The disorder-induced scattering
may lead to a qualitatively similar effect [19]. The tem-
perature exponent in conductance can reveal the Lut-
tinger parameter K, but a large temperature range is
needed to fit the data. The tunneling zero bias anomaly
is also predicted to encode K, but measurements often
contain contributions from other mechanisms [20].
In the simplest version of HLL physics that realizes the
quantum spin Hall effect [4, 5, 21, 22], the z component
of spin is assumed to be conserved in a TI. As a result,
the edge electrons carry well-defined Sz currents. When
0
I'
1
I
1
I
2
V
FIG. 1. Using helical quantum edge gears to measure the
Luttinger parameter. We consider Z2 TI edge states in two
adjacent topological regions. The blue and red arrows indi-
cate the propagation directions of edge electrons with oppo-
site helicities. The left TI is connected to external leads; I1
and I ′
1 denote the currents of the edges connected to these.
The right TI edge floats as an electrically isolated closed loop.
Rashba spin-orbit coupling [1] enables Coulomb drag due to
short-ranged spin-flip scattering [23] between the adjacent
edges. This induces a current I2 that circulates in the right
edge.
In the case of identical TIs with an interacting edge
region of size L → ∞, at zero temperature strong backscat-
tering "locks" the currents I1 = I2, associated to perfect drag
[10, 12]. We then predict that the zero-temperature conduc-
1)/V = (e2/h)(2K + 1)/(K + 1), where K
tance is G = (I1 + I ′
is the Luttinger parameter. In a real system of finite length
L ≫ ξ and at temperatures T satisfying v/L . kBT ≪ ∆
[11] with ξ = v/∆ and ∆ the Mott gap of the antisymmetric
mode, the result for G holds up to terms exponentially small
in L/ξ and ∆/kBT [10 -- 12]. Here v is the charge velocity.
Rashba spin-orbit coupling (SOC) is present [1] (generi-
cally expected in the absence of inversion symmetry), Sz
symmetry is sabotaged. New spin-flip interactions [23 --
25] are then allowed on TI edges.
We show that the Luttinger parameter enters the con-
ductance in a Coulomb drag geometry consisting of two
coplanar TI regions with Rashba SOC. Over a segment of
length L, proximate HLL edge states are separated by a
gap narrow enough to allow short-ranged Coulomb scat-
tering but wide enough to prevent tunneling. In Fig. 1,
we consider two identical helical edges. Current I1 is in-
jected by external leads. Short-ranged spin-flip scatter-
ing [23] between edges induces a current I2 in the right TI
edge loop, which floats without leads. At zero tempera-
ture, the two proximate edge segments develop a locking
state of perfect drag (I1 = I2) [10, 12] for an infinitely
long interacting region L → ∞. An additional current
I′1 flows in parallel between the contacts. The zero-
temperature two-terminal conductance G = (I1 + I′1)/V
is
G =
e2
h h1 + (1 + 1/K)−1i =
e2
h (cid:18) 2K + 1
K + 1 (cid:19) ,
(1)
where (1 + 1/K) is the dimensionless resistance of the
locked edges, as explained below. For a finite locking
length L ≫ ξ and at temperatures T satisfying v/L .
kBT ≪ ∆ [11], Eq. (1) holds up to exponentially small
corrections in L/ξ and ∆/kBT [10 -- 12]. Here ξ ≡ v/∆
is the length scale associated to the gapped "antilocking"
mode with I1 = −I2; ∆ is the energy gap.
We also discuss dissipative finite-temperature trans-
port in this geometry. In contrast to the usual setup for
Coulomb drag [9, 13], the system is naturally character-
ized in terms of conductances or conductivities:
I2 (cid:21)=(cid:20) G11 G12
(cid:20) I1
G21 G22 (cid:21)(cid:20) V1
V2 (cid:21) , Gij = σij /L,
where the labels 1 and 2 indicate the active and passive
systems respectively. For our TI edges, the passive sys-
tem is a closed HLL loop with V2 = 0, I1 = σ11V1/L, and
I2 = σ21V1/L. We compute the intraedge and transcon-
ductivities using the Kubo formula and bosonization, em-
ploying the effective potential formalism [26, 27]. Both
σ11 and σ21 give T −4K+3 (T −4K+2) behavior in the ab-
sence (presence) of disorder, above the locking transition.
Finally, we compute the conductivity of a single
edge due to the least irrelevant symmetry-allowed (one-
particle umklapp) interaction term. We find asymptotic
T −2K−1 (T −2K−2) behavior in the high- (low-) T limits,
in the presence of disorder, consistent with [28], and we
also obtain the full result for the clean limit. Power-law
scaling of conductance as a function of temperature and
bias voltage that may be attributable to Luttinger liquid
physics was recently observed in InAs/GaSb quantum
spin Hall devices [29].
Model. -- The edge states of a 2D TI can be expressed
in terms of right (R) and left (L) mover fermion fields.
The kinetic term is
2
(2)
H0 = −ivF Z dx(cid:2)R†(x)∂xR(x) − L†(x)∂xL(x)(cid:3) ,
where vF is the Fermi velocity of the edge band. Time-
reversal symmetry is encoded by R(x) → L(x), L(x) →
−R(x), and i → −i. Left and right movers interact via
intraedge Coulomb repulsion.
We focus on the coplanar geometry in Fig. 1 and
consider the backscattering components of the interedge
Coulomb interaction. An additional interedge Luttinger
interaction does not modify our results for the locking
regime if the distal portion of edge loop 2 is much longer
than the interacting segment of length L; otherwise the
parameter K in Eq. (1) encodes a combination of inter-
and intraedge correlations.
In the presence of Rashba
SOC, the following interedge backscattering terms are
allowed by symmetry [23]:
H− = U−Z dxhei2(kF 1−kF 2)xL†1R1R†2L2 + H.c.i ,
H+ = U+Z dxhei2(kF 1+kF 2)xL†1R1L†2R2 + H.c.i ,
(3)
(4)
where kF 1 (kF 2) indicates the Fermi momentum in the
first (second) edge. These are defined relative to an edge
Dirac point, which is a commensurate (time-reversal in-
variant) momentum [2]. The U− interaction describes
normal backscattering, while U+ is a two-particle umk-
lapp interaction. Additional one-particle umklapp inter-
action terms are also allowed,
HU = Xa=1,2
UaZ dxhe−i2kF a xR†aLaR†¯aR¯a
− ei2kF a xL†aRaL†¯aL¯a + H.c.i,
(5)
where a is the index of the edge, ¯1 = 2, and ¯2 = 1.
It is worth mentioning that all of these interactions are
disallowed in the presence of Sz conservation (in each
edge) [23, 30].
For simplicity, we assume the two HLLs are identi-
cal, so that kF 1 = kF 2 ≡ kF and U1 = U2 ≡ U . The
dominant interedge interaction at T = 0 is the nonumk-
lapp backscattering H−; the others are irrelevant at long
In order to include Lut-
wavelengths for kF 6= 0 [14].
tinger liquid effects, we use bosonization [14, 31]. The
individual edge loop HLLs are described by
Hb,0 =
v
2 Xa=1,2Z dx(cid:20)K (∂xφa)2 +
1
K
(∂xθa)2(cid:21) ,
(6)
where K is the Luttinger parameter and v is the charge
velocity. K = 1 and v = vF corresponds to the free
fermion limit. The density (n) and current (I) can be
expressed in terms of the axial fields as na = ∂xθa/√π
and Ia = −∂tθa/√π, respectively. The interedge interac-
tion H− is bosonized to
Hb,− =
U−
2π2α2 Z dx cosh√4π (θ1 − θ2)i ,
(7)
where α is an ultraviolet length scale.
Perfect current drag and dc conductance. -- At zero
temperature, two infinite HLLs form an interedge lock-
ing state [10, 12] due to the two-particle backscatter-
ing term in Eq. (7). The locking state is characterized
by θ1(t, x) = θ2(t, x) + cm, where cm = (m + 1/2)√π
is a constant and m ∈ Z. This state exhibits per-
fect current drag [10], I1 = I2 in Fig. 1. The conduc-
tance of the locked edges (both carrying current I1) is
I1/V = (e2/h)[K/(K + 1)]. This can be understood as
the series resistor combination of a spinless LL connected
to leads with resistance h/e2 [15 -- 17] and one with peri-
odic boundary conditions and resistance h/Ke2 [32, 33].
An explicit Green's function calculation confirms this re-
sult [34], which is also independent of disorder. Equation
(1) is obtained by adding the parallel I′1 edge channel.
For a finite interacting region of length L and nonzero
temperature T , we require that L ≫ ξ and kBT ≪ ∆.
Occasional phase slips between the drive and slave cir-
cuits give rise to corrections that are exponentially small
in L/ξ and ∆/kBT [10 -- 12]. For L = 1 µm in InAs/GaSb
with v ∼ vF = 3 × 104 m/s, this gives a lower bound
for ∆ of the order of v/L = 0.02 meV. We assume
that kBT is larger than the latter to avoid coherent in-
stanton effects [11]. By comparison, the bulk minigap
is of the order of 4 meV [7]. The Mott gap takes the
form [14] ∆ ∼ pK U−v /α. Using α = 1 nm gives
∆ ∼ 20 meVpK (U−/v). The interaction strength U−
is obtained from the inter-edge Coulomb potential, medi-
ated by matrix elements determined by the Rashba SOC
in each TI (since it vanishes in its absence). The result
will depend on microscopic details that we do not analyze
here.
Finite temperature corrections. -- Above a crossover
temperature T ∗ ∼ ∆/kB[12], inelastic electron-electron
collisions due to the interedge interactions in Eqs. (3) -- (5)
can be treated perturbatively. In addition, we consider
intraedge collisions due to electron-electron interactions
[Eq. (14), below] and forward-scattering potential disor-
der. Ordinary backscattering (random mass) disorder is
forbidden by time-reversal symmetry. We ignore irrel-
evant backscattering disorder terms with extra deriva-
tives that are not expected to impact the conductivity
in isolation [28] and which give subleading corrections in
combination with interactions. Forward-scattering disor-
der is encoded in Himp =Pa=1,2R dx ηa(x) na(x), where
ηa(x) is a random potential obeying ηa(x) = 0 and
ηa(x)ηb(x′) = gη δa,bδ(x − x′). The ··· denotes disorder
averaging, while gη characterizes the disorder strength.
3
To compute the conductivity, we evaluate interaction
corrections to the inverse boson propagator via the effec-
tive potential method [26, 27]. We use replicas to average
over disorder. The retarded boson correlation function is
ab
, (8)
=h G(R)(ω, k)i−1
ab −h Π(R)(ω, k)iab
h G(R)(ω, k)i−1
where a, b ∈ {1, 2} indicate the edges. The noninter-
acting propagator is G(R)(ω, k), while Π(R) denotes the
self-energy describing the interaction corrections. Equa-
tion (8) is a matrix Dyson equation. At second order in
the coupling constants, Π(R) contains an imaginary part
that determines the scattering rates; the real part does
not contribute to dc conductivity.
In the limit ω → 0
with k = 0,
ImhΠ(R)
ab i = −2ωΞab + O(cid:0)ω2(cid:1) ,
(9)
2 Ξ− + ΞU + ΞW and Ξ12 = Ξ21 = 1
where Ξab is the "rate" (inverse mean free path) as-
sociated to Πab. The components are Ξ11 = Ξ22 =
2 Ξ+ + 1
1
2 Ξ−.
ΞU is due to the one-particle backscattering term HU .
Ξ+ and Ξ− correspond to the two-particle backscatter-
ing interactions H+ and H−, respectively. ΞW is due
to intraedge inelastic electron-electron collisions, HW in
Eq. (14). ΞU and ΞW affect only the diagonal elements
of the self-energy, while Ξ+ and Ξ− contribute to all of
the components.
2 Ξ+ − 1
Temperature dependences of all the scattering rates
are obtained analytically. For kBT ≫ max(gη/v, vkF ),
ΞU ∝ T 2K−1, ΞW ∝ T 2K+1, and Ξ± ∝ T 4K−3. In the
presence of disorder and for kBT ≪ gη/v, ΞU ∝ T 2K,
ΞW ∝ T 2K+2, and Ξ± ∝ T 4K−2. The additional power
of T comes from disorder smearing of kF [35]. Full
crossovers with and without disorder are determined by
the explicit forms of ΞU,W,± provided in Ref. [34].
The dc conductivity can be obtained through Kubo
formula [36]. The intraedge dc conductivity is
e2
1
σ11 = −
π
e2
2h(cid:20)
=
lim
ω→0
Imhω G(R)
11 (ω, k)i
1
Ξ+ + ΞU + ΞW
+
1
Ξ− + ΞU + ΞW(cid:21) .
(10)
This expression is very different from the conductivity
of an isolated edge, discussed below. Both intraedge
and interedge interactions contribute to Eq. (10), but
the intraedge contribution ΞW is subleading comparing
to the interedge rates. The finite-temperature behavior
for σ11 is summarized as follows. For clean edges and
kBT ≫ vkF ,
σ11 ∼(T −4K+3,
T −2K+1,
for K ≤ 1,
for K > 1.
(11)
With smooth disorder and kBT ≪ gη/v,
for K ≤ 1,
for K > 1.
σ11 ∼(T −4K+2,
T −2K,
K ≤ 1 (repulsive interactions) is the physical situation.
The transconductivity is
σ21 =
e2
2h(cid:20)
1
Ξ+ + ΞU + ΞW −
1
Ξ− + ΞU + ΞW(cid:21) .
(13)
This can be measured by shorting the distal part of pas-
sive edge loop with an ideal (zero input impedance) cur-
rent meter. The leading temperature dependence of the
drag conductivity is the same as the intraedge conduc-
tivity. In the usual case, one measures instead the drag
resistivity [9, 13]. Here this evaluates to ρD = −ρ12 =
(h/2e2) [Ξ− − Ξ+] , independent of the interedge U and
intraedge W interactions.
In the case of clean identi-
cal edges, a positive drag resistivity with leading T 4K−3
behavior is obtained. This is the same result found previ-
ously for spinless Luttinger liquids [11, 12] and TI edges
with small magnetic fields [30].
Single edge. -- Finally, we consider dc conductivity of a
single edge in isolation, in the presence of Rashba SOC.
The least irrelevant intra-edge electron-electron interac-
tion term allowed by time-reversal symmetry that can
give a finite transport lifetime is
HW = W Z dx :(cid:8)ei2kF xL†(x)R(x)R†(x)[−i∂xR(x)]
+e−i2kF xR†(x)L(x)L†(x)[−i∂xL(x)] + H.c.(cid:9) :, (14)
where :O: denotes the normal ordering of O. This is a
one-particle spin-flip umklapp term. Similar one-particle
backscattering interactions appear in Refs. [24, 25, 28],
but the full temperature dependence of the dc conductiv-
ity was not determined. The interaction correction due
to Eq. (14) can be described by a self-energy with imag-
inary part ImhΠ(R)
k = 0 and ω → 0. We find that
W (ω, k)i = −2ωΞW + O(cid:0)ω2(cid:1) , when
22Kπ2K+3KΓ [−K − 3]
W 2 α2K
ΞW =
(v)2 l2K+1
T
Γ [K + 2]
+ γ2
γ/π
−∞
dy"
×Z ∞
2π (cid:1)2
(cid:0)y − kF lT
cosh (2πy) − cos (πK)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
×
sin (πK)
+ (kF → −kF )#
(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
Γ(cid:2) 4+K
2 + iy(cid:3)
Γ(cid:2) 2−K
2 + iy(cid:3)
2
,
(15)
where W = W/(π3/2α) and lT ≡ v/kBT denotes the
thermal de Broglie wavelength. The disorder is en-
coded in γ ≡ lT (K/v)2gη/2π. The dc conductivity is
σdc = (e2/h)(1/ΞW ). At zero temperature where the
HLL exhibits ballistic transport, σdc diverges.
For a clean noninteracting edge (K = 1 and v = vF ),
the conductivity reduces to
4
(12)
σdc =
e2
h
(v)2 l3
T
W 2π3
6 [cosh (kF lT ) + 1]
2π )4 + 5
2 ( kF lT
2π )2 + 9
.
(16)
(cid:2)( kF lT
16(cid:3)
At high temperatures kF lT ≫ 1, this is proportional
to T −3;
in the opposite limit the umklapp scattering
is thermally activated, giving σdc ∼ T exp (kF lT ). Lut-
tinger interactions modify the high-temperature behav-
ior to T −2K−1, while disorder leads to σdc ∼ T −2K−2
for lT ≫ (v)2g−1
η , again due to smearing of the Fermi
momentum [35]. The disordered result is consistent with
earlier predictions [24, 25, 28]. The T −2K−1 behavior
is the most important temperature dependence in the
clean edge due to the intraedge interactions, in the pres-
ence of Rashba SOC. The responsible interaction term in
Eq. (14) will be generated by renormalization irrespective
of whether it arises in a particular microscopic model.
Summary and discussion - In this work, we have shown
that low-temperature edge state transport measurements
for two proximate HLLs can quantify the value of the
Luttinger parameter in the presence of spin-flip interedge
electron-electron scattering. The latter is enabled by
Rashba SOC within each TI, as can arise in InAs/GaSb.
In contrast to the usual setup for Coulomb drag, the
passive circuit floats without leads and provides a much
stronger source of scattering for the active circuit edge
than intraedge interactions, which are negligible at low
temperature. Because of the topological protection, this
result is immune to disorder but receives exponentially
small corrections for a long, but finite interacting region.
In the same device geometry, both the intraedge con-
ductivity and the transconductivity show the same lead-
ing temperature dependence for T above the crossover
scale to the low-temperature locking regime. Thus, two-
terminal conductivity gives an alternative route to detect
Coulomb drag physics. We have also computed the con-
ductivity correction due to the least irrelevant symmetry-
allowed interaction in a given edge. This gives T −2K−1
temperature dependence for a clean edge.
We close with some observations and avenues for fu-
ture work.
In general, negative drag is possible when
kF 1 − kF 2 ≫ kF 1 + kF 2. Eq. (4) instead of Equation
(3) dominates the interedge interactions at low temper-
ature in this case. For two almost identical edges but
kF 1 = −kF 2, a perfect antiparallel current locking can oc-
cur; the two-terminal conductance is still given by Eq. (1)
in the T → 0 limit. The finite-temperature behavior will
be qualitative the same as the parallel drag situation.
The generic kinetic theory of Coulomb drag between he-
lical edge states, that also includes the forward-scattering
long-ranged component of the Coulomb interaction, is an
important topic for future work [37]. Understanding how
a HLL edge state thermalizes via the various scattering
mechanisms has crucial implications for nonequilibrium
spectroscopy [38, 39]. It will also be interesting to study
the noise [40] for the two-helical-edge setup described
here.
Y.-Z.C. and M.S.F. thank R.-R. Du, L. Du, D. Na-
telson, and A. Nevidomskyy for useful discussions. A.L.
thanks N. Kainaris, I. Gornyi and D. Polyakov for multi-
ple important discussions and ongoing collaboration on a
related problem. A.L. and M.S.F. acknowledge the hos-
pitality of the Spin Phenomena Interdisciplinary Center
(SPICE), where this work was completed. Y.-Z.C. and
M.S.F. acknowledge funding from the Welch Foundation
under Grant No. C-1809 and from an Alfred P. Sloan
Research Fellowship (No. BR2014-035). Y.-Z.C. also ac-
knowledges hospitality of the Michigan State University.
A.L. acknowledges funding from NSF Grants No. DMR-
1401908 and No. ECCS-1407875.
∗ yc26@rice.edu
5
[23] Y. Tanaka and N. Nagaosa, Phys. Rev. Lett. 103, 166403
(2009).
[24] T. L. Schmidt, S. Rachel, F. von Oppen, and L. I. Glaz-
man, Phy. Rev. Lett. 108, 156402 (2012).
[25] N. Lezmy, Y. Oreg, and M. Berkooz, Phys. Rev. B 85,
235304 (2012).
[26] M. E. Peskin and D. V. Schroeder, An Introduction to
Quantum Field Theory (Westview, Boulder, 1995).
[27] Z. Ristivojevic, P. Le Doussal, and K. J. Wiese, Phys.
Rev. B 86, 054201 (2012).
[28] N. Kainaris, I. V. Gornyi, S. T. Carr, and A. D. Mirlin,
Phys. Rev. B 90, 075118 (2014).
[29] T. Li, P. Wang, H. Fu, L. Du, K. A. Schreiber, X. Mu, X.
Liu, G. Sullivan, G. A. Csathy, X. Lin, R.-R. Du, Phys.
Rev. Lett. 115, 136804 (2015).
[30] V. A. Zyuzin and G. A. Fiete, Phys. Rev. B 82, 113305
(2010).
[31] R. Shankar, Acta Phys. Pol. B 26, 1835 (1995).
[32] W. Apel and T. M. Rice, Phys. Rev. B 26, 7063(R)
(1982).
[33] C. L. Kane and M. P. A. Fisher, Phys. Rev. B 46, 15233
(1992).
[34] See supplemental material.
[35] G. A. Fiete, K. Le Hur, and L. Balents, Phys. Rev. B 73,
[1] C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 146802
165104 (2006).
(2005).
[36] J. Sirker, R. G. Pereira, and I. Affleck, Phys. Rev. B 83,
[2] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045
035115 (2011).
(2010).
[37] N. Kainaris, A. Levchenko, I. Gornyi, and D. Polyakov,
[3] X.-L. Qi and S.-C. Zhang, Rev. Mod. Phys. 83, 1057
in preparation.
[38] C. Altimiras, H. Le Sueur, U. Gennser, A. Cavanna, D.
Mailly, and F. Pierre, Nature Physics 6, 34 (2010).
[39] S. S. Apostolov and A. Levchenko, Phys. Rev. B 89,
201303(R) (2014).
[40] Y. M. Blanter and M. Buttiker, Physics Reports 336, 1
(2000).
(2011).
[4] C. Xu and J. E. Moore, Phys. Rev. B 73, 045322 (2006).
[5] C. Wu, B. A. Bernevig, and S.-C. Zhang, Phys. Rev. Lett.
96, 106401 (2006).
[6] M. Konig, S. Wiedmann, C. Brune, A. Roth, H. Buh-
mann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang,
Science 318, 766 (2007).
[7] I. Knez, R.-R. Du, and G. Sullivan, Phys. Rev. Lett. 107,
136603 (2011).
[8] A. Roth, C. Brune, H. Buhmann, L. W. Molenkamp, J.
Maciejko, X.-L. Qi, and S.-C. Zhang, Science 325, 294
(2009).
[9] A. G. Rojo, Journal of Physics: Condensed Matter 11,
R31 (1999).
[10] Y. V. Nazarov and D. V. Averin, Phys. Rev. Lett. 81,
653 (1998).
[11] V. V. Ponomarenko and D. V. Averin, Phys. Rev. Lett.
85, 4928 (2000).
[12] R. Klesse and A. Stern, Phys. Rev. B 62, 16912 (2000).
[13] B.
preprint
Levchenko,
Narozhny
and
A.
arXiv:1505.07468 (2015).
[14] T. Giamarchi, Quantum Physics in One Dimension (Ox-
ford University Press, Oxford, 2004).
[15] D. L. Maslov and M. Stone, Phys. Rev. B 52, R5539
(1995).
[16] V. V. Ponomarenko, Phys. Rev. B 52, R8666 (1995).
[17] I. Safi and H. J. Schulz, Phys. Rev. B 52, R17040 (1995).
[18] T. Giamarchi, Phys. Rev. B 44, 2905 (1991).
[19] D. L. Maslov, Phys. Rev. B 52, R14368 (1995).
[20] V. V. Deshpande, M. Bockrath, L. I. Glazman, and A.
Yacoby, Nature 464, 209 (2010).
[21] C. L. Kane and E. J. Mele, Phy. Rev. Lett. 95, 226801
(2005).
[22] B. A. Bernevig and S.-C. Zhang, Phys. Rev. Lett. 96,
106802 (2006).
Helical Quantum Edge Gears in 2D Topological Insulators:
SUPPLEMENTAL MATERIAL
We set = kB = 1 except as noted.
BOSONIZATION CONVENTIONS
We adopt the standard field theoretic bosonization method. The fermionic fields can be described by chiral bosons
via
6
R(x) =
1
√2πα
ei√π[φ(x)+θ(x)], L(x) =
1
√2πα
ei√π[φ(x)−θ(x)],
where α is some ultraviolet length scale.
The time reversal operations in the bosonic language read: φ → −φ +
√π
2 , θ → θ −
√π
2 , and i → −i.
In the imaginary time formalism, the Luttinger action for the ath edge reads
BOSONIC ACTIONS
i (∂xθa) (∂τ φa) +
v
2 Zτ,x (cid:20)K (∂xφa)2 +
xφa(cid:1) cos(cid:16)√4π θa + 2kF,ax(cid:17) ,
S0,a =Zτ,x
SW,a = WaZτ,x (cid:0)∂2
Simp,a =Zτ,x
ηa(x)
1
√π
∂xθa,
1
K
(∂xθa)2(cid:21) ,
where Rτ,x
is the short hand notation for R dτ dx.
The inter-edge interactions correspond to
SU = Xa=1,2
S+ = −U+
2π2α2 Zτ,x
U−
2π2α2 Zτ,x
S− =
Ua
π3/2α Zτ,x
(∂xφ¯a) sinh√4πθa + 2kF axi ,
cosh√4π (θ1 + θ2) + 2(kF 1 + kF 2)xi ,
cosh√4π (θ1 − θ2) + 2(kF 1 − kF 2)xi ,
where a labels the edge, with ¯1 = 2 and ¯2 = 1.
We can integrate over ∂xφ1 and ∂xφ2 exactly. The θ-only action is
a (∂xθa)2i
1
Sθ = Xa=1,2
− Xa=1,2
− Xa=1,2
i Wa
2vaKa Zτ,x h(∂τ θa)2 + v2
vaKa Zτ,x
vaKaπ3/2α Zτ,x
iU¯a
(∂τ ∂xθa) cos(cid:16)√4π θa + 2kF ax(cid:17)
(∂τ θa) sin(cid:16)√4πθ¯a + 2kF ¯ax(cid:17) + S+ + S−,
(17)
(18)
(19)
(20)
(21)
(22)
(23)
(24)
(25)
(26)
where we have dropped terms not contributing to the boson self-energy at the second homogeneous order of the
coupling constants.
7
Forward-scattering potential disorder is averaged using the replica trick. The quadratic part of the action becomes
Sθ,0 =
1
2vK Xa=1,2
R
Xn=1Z dτ dxh(∂τ θa,n)2 + v2 (∂xθa,n)2i −
gη
2π Xa=1,2
R
Xn,m=1Z dτ dτ′dx [∂xθa,n(τ )] [∂xθa,m(τ′)] ,
(27)
where n, m are the replica indexes, R is the number of replica, and gη is the variance of the disorder potential [η(x),
introduced in the main text]. All interaction terms are diagonal in the replica space.
DC CONDUCTANCE
We derive the zero temperature dc conductance result [Eq. (1)] in this section. We consider the device geometry
in Fig. 1. The edge carrying current I1 has Luttinger parameter K and charge velocity v. It is connected to external
leads, which we treat as non-interacting free fermion reservoirs with K = 1 and v = vF . The electric field is applied
between the leads. The passive circuit edge carrying current I2 forms a closed loop with uniform Luttinger parameter
K and velocity v. For simplicity, we assume that this loop is infinitely long (but see below). The two edges interact
via Eq. (7) in the region −L/2 ≤ x ≤ L/2. At zero temperature, the locking condition holds across this span of length
L. We can replace the sine-Gordon term in Eq. (7) by a mass term,
Hb,M =
M 2
2 Z L/2
−L/2
dx (cid:20) θ1(x) − θ2(x) − c0
√2
(cid:21)2
.
(28)
The constant c0 can be absorbed by shifting θ2 → θ2 − c0; the locking condition becomes θ1 = θ2.
The current I1 can be expressed in terms of retarded Green's functions,
e2
πZ L/2
hI1(x)i = i
12 (ω; x, x′)i , (29)
where E is the external electric field in the region −L/2 ≤ x ≤ L/2, and η1,2(x) are the random forward scattering
potentials. The retarded Green's functions in the above formula are determined by
[∂x′η2(x′)]hω G(R)
11 (ω; x, x′)i − i
dx′ [E − ∂x′η1(x′)] lim
ω→0hω G(R)
dx′ lim
ω→0
−L/2
−∞
e2
πZ ∞
ω2
v1(x)K1(x) + ∂xh v1(x)
K1(x) ∂xi − M 2(x)
M 2(x)
2
2
where
M 2(x)
2
ω2
vK + v
K ∂2
x − M 2(x)
2
G(R)
11 (ω; x, x′) G(R)
21 (ω; x, x′) G(R)
12 (ω; x, x′)
22 (ω; x, x′)
G(R)
= δ(x − x′)1,
1,
K1(x) =(K, −L/2 ≤ x ≤ L/2
x > L/2
v1(x) =(v,
−L/2 ≤ x ≤ L/2
x > L/2
M (x) =(M, −L/2 ≤ x ≤ L/2
vF ,
0,
x > L/2
(30)
(31)
(32)
(33)
The retarded Green function can be solved by imposing the following boundary conditions [15, 19]. (i) G(R)
ab
continuous everywhere in x. (ii) v1(x)
x ∼ x′,
K1(x) ∂x G(R)
11 , v1(x)
K1(x) ∂x G(R)
12 , ∂x G(R)
21 , and ∂x G(R)
is
22 are continuous for x 6= x′. (iii) For
K1(x)
K1(x)
(cid:20) v1(x)
(cid:20) v1(x)
h v
h v
K
K
∂x G(R)
∂x G(R)
11 (ω; x, x′)(cid:21)x=x′+0+ −(cid:20) v1(x)
12 (ω; x, x′)(cid:21)x=x′+0+ −(cid:20) v1(x)
K1(x)
∂x G(R)
∂x G(R)
11 (ω; x, x′)(cid:21)x=x′−0+
12 (ω; x, x′)(cid:21)x=x′−0+
∂x G(R)
∂x G(R)
21 (ω; x, x′)ix=x′+0+ −h v
22 (ω; x, x′)ix=x′+0+ −h v
K
K
K1(x)
∂x G(R)
∂x G(R)
21 (ω; x, x′)ix=x′−0+
22 (ω; x, x′)ix=x′−0+
= 0
= 1.
= 1,
= 0,
(34)
(35)
(36)
(37)
(iv) The retarded Green functions obey the outgoing wave conditions.
8
Expanding G(R)
ab
ditions, we find that
in each region in terms of propagating and/or evanescent waves and imposing all boundary con-
lim
ω→0hω G(R)
11 (ω; x, x′)i = lim
ω→0hω G(R)
12 (ω; x, x′)i = −i
K
2(1 + K)
.
The result is independent of x. The current expression in Eq. (29) becomes
hI1(x)i =
e2
π
K
2(1 + K)Z L/2
−L/2
dx′ [E − ∂x′ η1(x′)] −
e2
π
K
=
(1 + K)
e2
h
[EL − η1(L/2) + η1(−L/2)] −
(1 + K)
K
2(1 + K)Z ∞
K
dx′ [∂x′ η2(x′)]
−∞
[η2(∞) − η2(−∞)] ,
e2
h
(38)
(39)
where η1(L/2) = η1(−L/2) = 0 because the first edge is connected to free fermion leads, and η2(∞) = η2(−∞) due
to the periodic boundary condition. The conductance of the locked edges is then
G = hI1i
EL
=
K
1 + K
e2
h
.
(40)
Adding the contribution of the parallel edge carrying I′1 gives Eq. (1).
In the presence of the inter-edge Luttinger interactions, the Luttinger parameter in the region −L/2 ≤ x ≤ L/2 is
modified. The two-terminal conductance is unchanged if we assume that the distal part of the passive edge is much
longer than the interacting part, as above. Then this passive edge is effectively connected to the Luttinger liquid
leads with Luttinger parameter K, and this gives resistance (1/K)h/e2. For a finite total length l > L of the passive
edge, the value of the measured Luttinger parameter is between the intra-edge value K and the Luttinger parameter
for the symmetric mode, and it also depends on the ratio of the interacting region length L to the total length l.
SCATTERING RATES
At second order in the interaction coupling strengths, there are four distinct self-energies, ΠW , ΠU , Π+, and Π−.
Coupling constant mixing will occur at higher orders, but is prevented here by vertex operator charge neutrality
conditions. We are interested in the imaginary part of the retarded self-energies. In the long-wavelength and low-
energy limits, Im(cid:2)Π(R)(ω, k)(cid:3) ≈ −2ωΞ.
In this section we provide the explicit results for the scattering rates that enter the intra-edge and transconductivities
in Eqs. (10) and (13). The scattering rate due to Eq. (14) already appears in Eq. (15). Here γ = K 2βgη/2πv is a
parameter indicating the ratio of the effective disorder strength to the temperature.
In the clean limit (γ → 0), the Lorentzian distributions in Eq. (15) becomes delta functions. The scattering rate
reduces to
sin (πK)
Γ [−K − 3]
Γ [K + 2]
ΞW =(cid:16) W αK(cid:17)2 22K+1π2K+3
v2K+3β2K+1 K
where β is the inverse temperature. When T ≫ vkF , the clean scattering rate is proportional to T 2K+1.
2π i
2π i
In the presence of disorder and at low temperatures such that γ ≫ 1, the scattering rate becomes
v2K+3β2K+2
ΞW =(cid:16) W αK(cid:17)2 22Kπ2K+1
cosh (vβkF ) − cos (πK)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
√π Γ(cid:2)2 + K
2(cid:3) Γ(cid:2) K
Γ(cid:2) 5
2 + K(cid:3)
2 + i vβkF
2 + i vβkF
Γh 4+K
Γh 2−K
2π (cid:17)2
(cid:16) vβkF
2(cid:3) Γ(cid:2) 5
2(cid:3) Γ(cid:2) 1
K sin (πK)
2 + K
βγ/π
+ γ2
(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
2 + K
2(cid:3) Γ [−K − 3]
.
(42)
2
,
(41)
The term in square brackets is independent of temperature, so that ΞW ∼ T 2K+2.
The inter-edge single particle backscattering Hamiltonian in Eq. (5) contains two terms, U1 and U2. U1 and U2
correct the dc conductivity in edge 1 and 2, respectively. The scattering rates are
9
ΞU,a =(cid:16) UaαK(cid:17)2 22K−3π2K+1
v2K+1β2K−1
1
K
Γ [1 − K]
Γ [2 + K]
2
(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
γ/π
+
γ/π
dy
×Z ∞
−∞
2π (cid:17)2
(cid:16)y − vβkF,a
In the high-temperature limit γ → 0 and vβkF,a → 0, ΞU is proportional to T 2K−1.
where Ua = Ua/π3/2α.
In
the low-temperature limit γ ≫ 1, ΞU is proportional to T 2K. In the main text, we assume two identical edges and
U1 = U2, so that ΞU,1 = ΞU,2 = ΞU .
2π (cid:17)2
(cid:16)y + vβkF,a
+ γ2
+ γ2
sin (πK)
cosh (2πy) − cos (πK)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
Γ(cid:2) K
2 + iy(cid:3)
Γ(cid:2)− K
2 + iy(cid:3)
,
(43)
The scattering rates due to Eqs. (3) and (4) are given by
Γ [1 − 2K]
Γ[2K]
v4K−1β4K−3
Ξ± =(cid:16) U±α2K(cid:17)2 24K−3π4K
4π (cid:17)2
(cid:16)y − vβk±
×Z ∞
−∞
F
¯γ/π
2
where ¯γ = K 2βgη/πv, U± = ∓U±/2π2α2, and k±F = 2(kF 1 ± kF 2).
vβk±F → 0, Ξ± is proportional to T 4K−3. In the low-temperature limit ¯γ ≫ 1, it is proportional to T 4K−2.
cosh (2πy) − cos(2πK)(cid:12)(cid:12)(cid:12)(cid:12)
Γ [1 − K + iy](cid:12)(cid:12)(cid:12)(cid:12)
4π (cid:17)2
(cid:16)y + vβk±
dy
Γ [K + iy]
sin(2πK)
+ ¯γ2
+ ¯γ2
¯γ/π
+
F
In the high-temperature limit ¯γ → 0 and
,
(44)
|
1905.04034 | 1 | 1905 | 2019-05-10T09:42:03 | Stochastic dynamics and pattern formation of geometrically confined skyrmions | [
"cond-mat.mes-hall"
] | Ensembles of magnetic skyrmions in confined geometries are shown to exhibit thermally driven motion on two different time scales. The intrinsic fluctuating dynamics ($t\sim 1~$ps) is governed by short-range symmetric and antisymmetric exchange interactions, whereas the long-time limit ($t\gtrsim10\,$ns) is determined by the coaction of skyrmion-skyrmion-repulsion and the system's geometry. Micromagnetic simulations for realistic island shapes and sizes are performed and analyzed, indicating the special importance of skyrmion dynamics at finite temperatures. We demonstrate how the competition between skyrmion mobility and observation time directly affects the addressability of skyrmionic bits, which is a key challenge on the path of developing skyrmion-based room-temperature applications. The presented quasiparticle Monte Carlo approach offers a computationally efficient description of the diffusive motion of skyrmion ensembles in confined geometries, like racetrack memory setups. | cond-mat.mes-hall | cond-mat | a
Stochastic dynamics and pattern formation of geometrically confined skyrmions
Alexander F. Schaffer,1, ∗ Levente R´ozsa,2 Jamal Berakdar,1 Elena Y. Vedmedenko,2 and Roland Wiesendanger2
1Institut fur Physik, Martin-Luther-Universitat Halle-Wittenberg, D-06099 Halle (Saale), Germany
2Institut fur Nanostruktur- und Festkorperphysik, Universitat Hamburg, D-20355 Hamburg, Germany
(Dated: May 13, 2019)
Ensembles of magnetic skyrmions in confined geometries are shown to exhibit thermally driven motion on
two different time scales. The intrinsic fluctuating dynamics (t ∼ 1 ps) is governed by short-range symmetric
and antisymmetric exchange interactions, whereas the long-time limit (t (cid:38) 10 ns) is determined by the coac-
tion of skyrmion-skyrmion-repulsion and the system's geometry. Micromagnetic simulations for realistic island
shapes and sizes are performed and analyzed, indicating the special importance of skyrmion dynamics at finite
temperatures. We demonstrate how the competition between skyrmion mobility and observation time directly
affects the addressability of skyrmionic bits, which is a key challenge on the path of developing skyrmion-based
room-temperature applications. The presented quasiparticle Monte Carlo approach offers a computationally ef-
ficient description of the diffusive motion of skyrmion ensembles in confined geometries, like racetrack memory
setups.
Magnetic skyrmions1 -- 3 are quasiparticles which are con-
sidered as possible carriers of information for future storage
devices. Their specific chirality is determined by the antisym-
metric Dzyaloshinskii-Moriya exchange interaction (DMI)4,5.
The DMI can be induced by a broken inversion symmetry in
a crystal itself (e.g. MnSi)2 or by interfacing a heavy metal
layer (e.g. Pt, W, Ir) with a ferromagnetic material (e.g. Fe,
Co)6,7.
Conceptually the utilization of these topologically non-
trivial8 quasiparticles in so-called racetrack setups is of great
interest 9 -- 11: Skyrmions can be manipulated (written and
deleted)12,13 and addressed individually14 -- 16 on a magnetic
stripe, allowing a memory device extension from a pure
surface density into the third dimension by pushing the
quasiparticle-hole-train back and forth, e.g. by applying elec-
trical currents17,18. The low threshold driving current19 along
with the small size and high stability of the skyrmions are key
features of this concept.
To connect experimental and theoretical model systems
with technological applications, investigating the influence of
finite temperatures is of crucial importance. The bits on a
racetrack-based memory device need to fulfill two main fea-
tures, stability against external perturbations and addressabil-
ity. Both are affected by thermal fluctuations, as shown below.
The stability of skyrmions was examined in several publi-
cations over the last years20 -- 24. R´ozsa et al.21 investigated the-
oretically periodic two-dimensional Pd/Fe double-layers on
Ir(111) and determined the phase diagram as a function of ex-
ternal field and temperature, which includes field-polarized,
skyrmion lattice, spin spiral, fluctuation-disordered and para-
magnetic regions.
Skyrmion lifetimes in the fluctuation-
disordered regime were calculated. The lifetimes of iso-
lated skyrmions in racetrack geometries for Pd/Fe/Ir(111) and
Co/Pt(111) systems were investigated in Refs.22,23, and differ-
ent mechanisms were revealed for the collapse of a skyrmion
inside the track and at the boundary.
The diffusive motion of skyrmions at finite temperature
has also attracted significant research attention lately25 -- 27.
Previous studies concentrated on diffusion in infinite or ex-
tended geometries, but a clarification of the role of the sam-
ple shape still seems to be missing in the case where the sys-
tem size becomes comparable to that of the skyrmions. Ef-
fects of this kind directly impede the addressability, which
is indispensable when using skyrmions for storage technol-
ogy, e.g.
in racetrack memory devices. Since the number
of skyrmions during the diffusive motion remains constant,
quasiparticle models have been developed for their description
in this limit25,26,28,29, which are primarily based on the Thiele
equation30. The advantage of such a collective-coordinate de-
scription over micromagnetic or atomistic spin dynamics sim-
ulations is its significantly lower computation cost.
Due to the finite temporal resolution, imaging techniques
on the atomic length scale like spin-polarized scanning tun-
neling microscopy (SP-STM)31 or magnetic force microscopy
(MFM)32 cannot access temporally the diffusive motion of
the skyrmions.
Instead, the time-averaged skyrmion proba-
bility distribution is imaged which may well be different from
the zero-temperature configuration or a snapshot of a simula-
tion. Here we will discuss the formation, stability and address-
ability of diffusive skyrmion configurations. Using micro-
magnetic simulations, it is shown that the complex interplay
of the repulsive interaction between the skyrmions33,34 along
with the confinement effect of the nanoisland and the ther-
mally induced skyrmion diffusion leads to a pattern formation
of the skyrmion probability distribution on the nanosecond
time scale. A computationally efficient quasiparticle Monte
Carlo method is introduced, which is found to yield compa-
rable results to time-averaged micromagnetic simulations re-
garding the skyrmion probability distribution. The simple im-
plementation and high speed of such a method may make it
advantageous over micromagnetic simulations when the ac-
tual number of skyrmions has to be determined based on a
time-averaged experimental image.
RESULTS
Skyrmion stability. We study metastable skyrmions and
their motion and mobility at finite temperatures. At first the
phase space has to be explored with respect to the exter-
nal magnetic field and temperature. A detailed description
of the phase diagram for extended systems of ultrathin bi-
2
fields lead to shrunken skyrmions, which in turn enables the
magnetic island to host a larger number of quasiparticles. In
this regime the topological charge is always close to an in-
teger, with the small deviation caused by the tilting of the
spins at the edge of the sample. Reaching field values above
B ≈ 3.5 T, the system becomes completely field-polarized
and skyrmions are not stabilized anymore starting from a ran-
dom configuration, even at zero temperature. Previous calcu-
lations37 -- 39 indicated that skyrmions on the lattice collapse at
around B = 4.5 T in the system.
In order to prevent the appearance of spin spiral states and
to be able to consider the skyrmions as well-defined quasi-
particles, we choose B = 1.5 T for the following calcula-
tions, unless mentioned otherwise. Figure 1 shows that sev-
eral metastable configurations associated with different topo-
logical charges are accessible starting from randomly gener-
ated initial states. However, in this approach not all stable
structures are covered, as the included ones are obtained from
relaxing random initial configurations. Different configura-
tions may also be generated in a controlled way by adding
skyrmions to the field-polarized state one-by-one, and relax-
ing the state at zero temperature. This is shown in Fig. 2 for
the disk-shaped and a triangular geometry for B = 1.5 T.
On top of the transitions due to a variation of the magnetic
field, the impact of finite temperature is also of crucial im-
portance.
In Fig. 3a temperature effects on the topological
charge are displayed. Starting from a relaxed configuration
at T = 0 K, the temperature is increased every 500 ps by
∆T = 2 K and the topological charge is averaged over time
at each temperature. The results show a first discontinuity at
T1 ≈ 40 K. Up to this temperature the thermal fluctuations are
relatively weak, and the number of well-defined skyrmions in-
side the sample remains constant. The small standard devia-
tion of the topological number in this regime can be attributed
to the thermal motion of the spins at the edge. However,
the combination of thermal fluctuations and the repulsion be-
tween the skyrmions triggers the escape of a single skyrmion
out of the sample at T1 ≈ 40 K. Hence, the total topological
number is changed from NSk ≈ −5 to NSk ≈ −4, see Sup-
plementary Video 1. This change is also shown in the plot of
the topological number susceptibility in Fig. 3b, defined as
(cid:0)(cid:104)N 2
Sk(cid:105) − (cid:104)NSk(cid:105)2(cid:1) ,
(1)
χN =
1
T
(cid:82) t1
t0
with (cid:104)NSk(cid:105) = 1
NSk(t)dt. Only a minor deviation
t1−t0
from the otherwise smooth function is visible. This means that
the thermal fluctuations are still not strong enough to perturb
the quasiparticles drastically.
A first characteristic change in the slope of the topological
susceptibility can be seen at T2 ≈ 50K. Comparing Figs. 3a
and b it is obvious that the fluctuations of topological num-
ber are increasing with temperature, and around this point the
lifetime of skyrmions is reduced below the averaging window.
The average topological charge continuously approaches zero
above this temperature. In this disordered regime the lifetime
of skyrmions is shorter than the observation time, as the fluc-
tuations allow a collapse inside the sample. Hence, this tem-
perature range is not favorable for information storage appli-
FIG. 1. Field dependence of the total topological charge. Red re-
gion: external fields below the strip-out instability leading to spin
spiral segments; dark green:
transition regime; bright green: en-
semble of skyrmions; blue: completely field-polarized island, where
skyrmions collapse due to the strong external field. Solid red line
indicates the magnetic field B = 1.5 T used for subsequent calcula-
tions. For each step in the vertically applied field 20 randomly mag-
netized configurations of a 21 nm diameter nanodisk were relaxed
towards the nearest metastable state on the energy hypersurface at
T = 0 K.
atomic layers of Pd/Fe on an Ir(111) substrate hosting mag-
netic skyrmions can be found, e.g., in Refs.21,35. Here, simula-
tions are performed for the same system in the micromagnetic
framework, by solving the Landau -- Lifshitz -- Gilbert equation
(LLG)36, as described in the Methods section.
In Fig. 1 possible equilibrium spin configurations are in-
vestigated in a 21-nm-diameter nanodisk of 0.4 nm thickness
at zero temperature. For each fixed external magnetic field
(B = Bz), 20 different randomly generated initial states
are considered and relaxed towards the closest local mini-
mum of the total energy hypersurface. Subsequently, the total
skyrmion number NSk of the relaxed states is calculated and
plotted against the external magnetic field in Fig. 1 to gain an
overview of the possible metastable states. Below the strip-
out instability field37, skyrmions as localized cylindrical spin
structures are not stable and the configuration consists of spin
spiral segments. For these the topological number is not a
well-defined quantity, as spin spiral structures can extend over
the whole island, and therefore the boundaries have a signif-
icant effect. This is reflected by the continuous distribution
of topological charge values found below 0.75 T in the red
regime in Fig. 1, whereas discrete skyrmion numbers corre-
spond to discrete steps in the total topological charge. The
upper boundary of this region is reasonably close to the strip-
out field of B = 0.65 T37,38 determined for extended systems.
With increasing the external field, individual skyrmions
may be stabilized in the system, where they will coexist with
spin spiral segments. This corresponds to the darker green
area in Fig. 1 around B ≈ 1 T, where besides the continuous
distribution also discrete steps can be observed in the topolog-
ical charge.
In the following bright green region stronger magnetic
01234-8-6-4-2024B(T)NSkB0 3
FIG. 3. Temperature dependence of the topological number.
Disk-shaped island (21 nm diameter) for B = 1.5 T. a Total topo-
logical number (cid:104)NSk(cid:105) averaged over 0.5 ns with error bars indicat-
ing the standard deviation. b Topological number susceptibility χN
(Eq. (1)), with the dashed black lines indicating three characteristic
temperatures discussed in the main text. Solid red line marks the
temperature used for successive simulations.
Skyrmion diffusion. With these first results, giving in-
formation on the segment of the parameter space we deal
with, we will focus on the influence of thermal fluctuations
on the dynamics of the skyrmions. In Fig. 4a and 5 results
for different initial numbers of skyrmions presented in Fig. 2
are shown for the circular and triangular geometries, respec-
tively. The first row shows the magnetic configuration after
20 ps of simulation time and the second row the final state,
which means the magnetization state after our total simula-
tion time of 20 ns. Only the out-of-plane z component is
shown in grayscale. The magnetic configuration after only
20 ps is qualitatively very similar to the final one, displaying
slightly deformed skyrmion configurations due to the thermal
fluctuations compared to the zero-temperature initial states in
Fig. 2. This short time scale on which the short-range Heisen-
berg and Dzyaloshinskii-Moriya interaction dominate the dy-
namics and cause shape deformations, is examined more ex-
tensively below.
The third row corresponds to the time-averaged z compo-
nent, calculated over the simulation time divided into 1000
snapshots.
In our understanding this result comes as close
as possible to real-space scanning-probe measurements, due
to the limited time resolution and finite measurement dura-
tion in such techniques. According to Ref.37, typical limits
FIG. 2. Relaxed states for different initial skyrmion numbers.
Brightness corresponds to the out-of-plane component of the mag-
netization characterized by the polar angle θ, whereas the color de-
notes the in-plane orientation described by the azimuthal angle ϕ,
as shown in the color map. B = 1.5 T, T = 0 K. System size: a
21 × 21 × 0.4 nm3; b 30 × 30 × 0.4 nm3. The saturation magneti-
zation is locally set to zero in the dark gray areas.
cations.
Finally, at about T3 ≈ 100K the paramagnetic regime is en-
tered, which is characterized by a completely disordered time-
averaged magnetic configuration. Here the average topologi-
cal charge is very close to zero. This behavior is also indicated
by a change of sign in the first derivative dχN (T )/dTT =T 3.
In the following, the external parameters are fixed to T =
T0 = 15 K and B = B0 = 1.5 T, shown by the solid red
lines in Figs. 1 and 3. This ensures that the thermal fluctu-
ations do not lead to a collapse or escape for the skyrmions,
only to a diffusive motion, and that the number of particle-like
skyrmions will be a constant during the simulation time.
of the time resolution in SP-STM are tres > 5 ms. With the
present simulation parameters we found that increasing the
simulation time further does not lead to a significant change in
the time-averaged images, indicating that similar observations
may be expected on the much longer experimental time scales
as well. The observed two characteristic time scales can be
attributed to different interaction types of clearly distinguish-
able energy scales: local deformations on the picosecond time
scale of the magnetic texture are dominated by thermal excita-
tions competing with the short-range symmetric and antisym-
metric exchange interactions, while the translational motion
leading to the complex pattern formation over tens of nanosec-
onds is caused by the repulsive interactions between pairs of
skyrmions and between skyrmions and the boundaries.
In case of the disk, it is extremely challenging to make a
clear statement about the number of skyrmions in the system
based on the time-averaged images only. As the symmetry
of the system is a cylindrical one, also the resulting picture is
cylindrically symmetric, consisting of concentric bright and
dark circles and rings. The small contrast differences along
the angular direction within a single diffusive ring-like area
(cf.
third row in Fig. 4a) arise because of the finite simula-
tion time, but also as an artifact of the finite grid, leading to a
deviation from the ideal radial symmetry. For all initial con-
figurations the total skyrmion number is conserved. Since the
skyrmions repulse each other, the radius of the resulting gray
ring increases for higher skyrmion densities, before one of
them becomes localized quite strongly in the center. This be-
havior is analyzed in Fig. 4b, where the out-of-plane magneti-
zation component depending on the distance from the center
of the disk is calculated by integration over the angular coor-
dinate. For comparison, the static profile of a single skyrmion
in the center of the disk is plotted as well (black curve). The
positions of the local minima of the integrated functions are
shown in Fig. 4c. Without performing the averaging over time,
the profile of the skyrmion rotates from mz = −1 in the cen-
ter towards mz = 1 in the field-polarized background. Due to
the diffusive motion of the skyrmions, the time-averaged im-
ages show a smaller difference compared to the background
magnetization at the approximate positions of the skyrmions,
providing a measure for the localized nature of the quasiparti-
cles in the sample. For an increasing number of skyrmions not
only the radius of the resulting ring-shaped pattern increases,
but so does the localization of the skyrmions.
For the triangular system in Fig. 5, the lower symmetry
of the geometry is reflected in the resulting time-averaged
pictures. The symmetry of the spin configuration coincides
with that of the sample for one, three and six skyrmions
without thermal fluctuations, as shown in Fig. 2b.
In the
time-averaged images in the third row of Fig. 5, this re-
sults in well-localized skyrmions with a strong dark contrast
for these numbers of quasiparticles in the system. Interest-
ingly, also the adjacent configurations show almost the same
time-averaged pattern as the highly symmetric configuration,
e.g.
two or four skyrmions compared to the case of three
skyrmions. For the case where one skyrmion is missing from
the highly ordered configuration, the remaining skyrmions im-
itate the absent skyrmion and effectively show up as an addi-
4
FIG. 4. Diffusive skyrmion motion on a circular island. a z com-
ponent of the magnetization (white +z, black −z) for an ascending
total skyrmion number. First row shows the configuration after 20 ps,
the second row after 20 ns of elapsed time, and the third row repre-
sents the time average for the total simulation time over 1000 snap-
shots. b Time-averaged signal as a function of the distance from the
center of the disk for different skyrmion numbers, averaged over the
angular coordinate. Black line shows the static profile of a central
single skyrmion. c Radii rmin corresponding to the local minima of
the time-averaged signal in panel b, in dependence on the skyrmion
number. Disk system (21 × 21 × 0.4 nm3), T = 15 K, B = 1.5 T.
The saturation magnetization is locally set to zero in the dark gray
areas.
tional "phantom skyrmion". In contrast, a surplus skyrmion
smears out in the time-averaged picture, so that mostly the
high-symmetry points remain observable, even though they
can also be slightly broadened -- cf. the 6th and 7th columns
in Fig. 5. For an even larger numbers of skyrmions, the repul-
sive interaction between them in combination with tempera-
ture fluctuations is strong enough for the skyrmions to escape
at the boundary during the simulation time, as shown in the
decreased number of quasiparticles in the second row com-
pared to the first row in the 8th and 9th columns in Fig. 5.
1Skprofilemin20ps20nsav.02468-1.0-0.50.00.51.0 5
FIG. 5. Diffusive skyrmion motion on a triangular island. z
component of the magnetization (white +z, black −z). First row
shows the configuration after 20 ps, the second row after 20 ns of
elapsed time, and the third row represents the time average for
the total simulation time over 1000 snapshots. Triangular system
(30 × 30 × 0.4 nm3), T = 15 K, B = 1.5 T. The saturation magne-
tization is locally set to zero in the dark gray areas.
To identify the different time regimes more clearly, the
convergence behavior of the time-averaged pictures is inves-
tigated. The time-integrated pictures are calculated up to
each snapshot time and compared to the averaged image after
20 nsvia a matching parameter, where a complete agreement
is denoted by a value of 1. The mathematical definition of
the matching parameter is given in the Methods. The results
are plotted in Fig. 6. Panels a and b show the convergence
behavior for different skyrmion occupations for the disk and
for the triangular geometry. For the circle there are no ma-
jor differences in terms of the convergence speed for different
skyrmion numbers. Only the ensembles of three and seven
skyrmions exhibit a slightly faster convergence, which is ex-
plicable by the resemblance of those states to the close-packed
arrangement. As expected, the close-packed array possesses
a lower mobility.
In the case of the triangle, for three and
six skyrmions the value 1 is reached much faster than for the
other configurations. This effect can again be explained by the
strong localization of the skyrmions in these cases, preventing
an exchange of their positions. A different trend is visible for
the eight-skyrmion case (purple line in Fig. 6b), which shows
a much slower convergence. This delayed behavior arises due
to the non-conserved skyrmion number, which can be seen
in Fig. 5. Consequently, after the escape of the skyrmions it
takes more time until the averaged picture has adapted to this
change.
For exploring the stochastic dynamics on the short time
scale, which we suppose to be governed by the skyrmion
deformations in contrast to the slow skyrmion displacement,
multiple simulations are performed for the same initial con-
figuration, two skyrmions inside the disk relaxed at zero tem-
perature, but with different pseudorandom number seeds. The
simulations cover a time of 100 ps each with 50 different ini-
tializations. After every 0.5 ps a snapshot is taken and the
positions of the two skyrmions extracted. On the scale of the
simulation time no noteworthy displacement of each of the
skyrmions takes place, however a deformation of the mag-
netic textures is visible. The mean skyrmion radius relative
to the zero temperature radius calculated as described in the
Methods, is averaged over the different simulations, shown in
Fig. 7. Here, two features are remarkable. Firstly, the radius
FIG. 6. Convergence behavior of the time-integrated magneti-
zation for different skyrmion numbers. The match between the
final time-averaged pattern after 20 ns and the time average taken
until time t is defined such that a value of 1 corresponds to perfect
agreement, see the Methods for details. a and b show the conver-
gence of the matching parameter for the disk and triangular setup,
respectively, for different skyrmion numbers.
increases, approaching an enhancement of about 10 % after
100 ps. Secondly, the radius is oscillating with a high fre-
quency of approximately 60 GHz, estimated from the average
time between the peaks. This oscillation can be identified with
internal skyrmion modes, like the so-called breathing modes
(cf. Ref.38: at T = 0 K, B = 1.5 T and the triangular atomic
lattice the breathing mode frequency is f = 70.88 GHz,
which is expected to decrease at higher temperature). These
findings support the result that in confined geometries, differ-
ent time scales are important for the skyrmion dynamics. On
the short time scale the internal modes and deformations of
the skyrmions are dominant, whereas on the longer time scale
the interaction leads to a slowly converging pattern formation.
All of the discussed examples showcase the strong influ-
ence of the interaction between skyrmions as well as of the ge-
ometrical aspects on their mobility, that can vary between de-
localization and a strong localization, e.g., in the center of the
disk in Fig. 4a. This feature of variable mobility, depending
on the geometry and packing density of skyrmions, is of gen-
eral nature. In real experimental systems further contributions
may affect the mobility, and ultimately the measured position
of the skyrmion as well. As an example of such a feature,
defects in the grown thin film nanoislands will be discussed.
In Fig. 8, a nanoisland geometry inspired by the experimental
results in Refs.7,12 is considered. Additionally to the previous
simulation parameters, a magnetic defect is inserted in the top-
left corner of the island, treated as a simulation cell with the
12345678920ps20nsav. 6
FIG. 8. Diffusive skyrmion motion on an asymmetric nanoisland
including a defect. z component of the magnetization (white +z,
black −z) is imaged. In the top-left corner a defect is modeled by
freezing the magnetization direction in a single simulation cell along
the +x direction. a Snapshots of the magnetization at different times,
as well as the resulting time-averaged picture (av.). b Time-averaged
signal along the dashed arrow shown in the lower right part of panel
a. Simulation box: 30 × 30 × 0.4 nm3, T = 25 K, B = 1.5 T. The
saturation magnetization is locally set to zero in the dark gray areas.
skyrmion and the boundary needs to be quantified. Due to
the Neumann boundary condition40 at the edge of nanois-
lands, the DMI leads to a noncollinear spin texture, similar
to a skyrmion41. Therefore, the interaction mechanism is the
same between the skyrmions and between a skyrmion and the
boundary, as has been studied in previous publications33. For
details on the calculation and the explicit functions of the po-
tentials see the Methods section.
potentials
quasiparticle
Starting from the modeled skyrmion-skyrmion and
skyrmion-boundary
simulations
are executed, in order to compare the calculated probability
densities with the time-averaged configurations obtained from
full-fledged micromagnetic simulations. The main assump-
tion for this endeavor is that neither the thermal fluctuations
lead to the collapse, creation or escape of skyrmions, nor does
a high skyrmion density lead to a merging of the skyrmions
on the island as discussed in Ref.39. A triangular setup
containing two quasiparticles serves as the model system.
The side of the triangle is chosen to be 30 nm, the same as in
FIG. 7. Fast deformation dynamics of two skyrmions on a disk-
shaped island. Two skyrmions on a disk (21 × 21 × 0.4) nm3 are
initialized from a relaxed zero-temperature configuration. Afterward,
50 different seeds for the pseudorandom number generator are used
to simulate the skyrmion dynamics over 100 ps, saved every 0.5 ps.
The results are analyzed by calculating the centers of the skyrmions,
followed by the computation of the average skyrmion radius (see
Methods) for each of them as shown in a and b. Averaging over the
different simulations smears out most of the pure stochastic dynam-
ics, yielding an oscillating pattern superposed with a general trend
of an increased skyrmion radius compared to the zero-temperature
configuration. Bright blue points show data averaged over different
simulations, the solid blue line corresponds to data smoothened by a
Gaussian filter in order to calculate the peak positions (red dots).
magnetization frozen along the in-plane +x direction. The
initial configuration including 5 skyrmions is evolved in time
over a span of 20 ns, as shown in the snapshots in panel a.
During the time evolution one skyrmion is pinned at the de-
fect, whereas the others are moving rather freely. The result-
ing time average of the images reflects this behavior, as only
a single spot is visible with a well-defined position in the up-
per left corner, and the rest of the quasiparticle features form
a blurred trace mostly following the geometry of the island.
Additionally, the profile of the out-of-plane spin component
is shown in Fig. 8b along the dashed arrow in the lower right
panel of Fig. 8a.
In this representation the discrepancy be-
tween the measured profiles of the different skyrmions is even
more pronounced. Where the localized skyrmion appears as a
sharp dip almost reaching mz = −1, the superposition of the
other four skyrmions leads to broader and shallower features,
and therefore no clear indication of their positions.
Quasiparticle model. The localization of the quasiparti-
cles discussed above may also be interpreted as the probabil-
ity density of finding a skyrmion at a selected position over
the complete simulation time. Such a probabilistic interpreta-
tion is capable of describing the different contrast levels ob-
served for nominally equivalent skyrmions, and it proves to be
valuable in the interpretation of scanning-probe experimental
results where the characteristic measurement times are signif-
icantly longer than the time scale of the diffusive motion. In
this section, a simplified quasiparticle model is introduced,
motivated by the time-averaged data of the micromagnetic
simulations, offering a time-efficient opportunity in predict-
ing the complex pattern formation of the skyrmion probability
distribution discussed above.
For the purpose of using a quasiparticle approach, the re-
pulsive potential between pairs of skyrmions and between the
5ns10ns20nsav.10nmab051015202530-1.0-0.50.00.51.0y(nm)〈mz〉 the case of the micromagnetic calculations shown in Figs. 2b
and 5. The motion of the skyrmions inside the potential is
calculated by modeling them as interacting random walkers,
using an implementation of a Markov-chain Monte Carlo
algorithm with Metropolis transition probabilities to study
their diffusion, described in detail in the Methods section.
This method offers a fast way of obtaining the cumulative
probability density function of the positions of the two
particles, which in turn can be compared to the time-averaged
4 and 5 obtained from micromagnetic
images in Figs.
simulations.
In the following, a quantitative comparison
between full micromagnetic simulations and Monte Carlo
calculations will be presented to review the validity of the
simplified quasiparticle approach. For this endeavor, we
tracked the positions of two skyrmions in the triangular
system from the micromagnetic simulation snapshots after
every 20 ps and calculated the probability density distribution
of the center coordinates. The resulting distribution along
with the Monte Carlo result after 105 Monte Carlo steps is
shown in Fig. 9. The largest difference between the two
results arises because of the substantially less data for the
micromagnetic calculation. As the histogram is calculated
with only 103 snapshots compared to 105 Monte Carlo steps,
this behavior is expected. Nevertheless, the characteristic
features are similar. In both results the three peak densities
are not radially symmetric, but are resembling the triangular
boundary shape. Hence this deformation is not an artifact
of the Monte Carlo simulation. Additionally, the average
distance between the density maxima may serve as a good
quantity for comparing both methods. As Fig. 9b lacks the
resolution for calculating the peak positions reliably, we start
instead from the time-integrated magnetization pictures in
Fig. 5. Based on the averaged result for two skyrmions, we
extract again the peak positions and calculate subsequently
the mean distance. The positions for the Monte Carlo calcu-
lations are at (11.0, 6.5) nm, (15.0, 13.5) nm, (19.0, 6.5) nm,
the micromagnetic
(11.1, 6.6) nm,
(15.0, 13.5) nm, (19.0, 6.5) nm. This leads to an average
distance of 8.0 nm for both the Monte Carlo calculations
and the micromagnetic simulations, supporting the validity
of the simplified quasiparticle approach in the investigated
parameter space.
simulations
deliver
The model is capable of predicting the skyrmion distribu-
tion in the long time limit and thereby serves as a method for
computationally efficient calculations for larger or more com-
plex systems. As an example, the probability density func-
tions of the Monte Carlo simulations are shown in Fig. 10 af-
ter 105 Monte Carlo steps for different temperatures and sam-
ple sizes. Due to the repulsion between the two skyrmions,
equilibrium positions are found close to the vertices of the
triangle, with energy barriers between these local energy min-
ima. At low temperature (T = 1 K) and a small island sizes
(30 nm edge length) in the upper left panel in Fig. 10, no tran-
sitions between the minima occur during the duration of the
simulation, and two skyrmions may be observed in the ob-
tained probability densities. As the temperature is increased
to T = 15 K or T = 30 K in the first row of Fig. 10, the
transition rate between the preferential positions is enhanced,
7
FIG. 9. Comparison of the Monte Carlo and micromagnetic sim-
ulations. The probability density function for two skyrmions inside
a triangular island as obtained from a: micromagnetic simulations,
and b: from calculations following the Monte Carlo algorithm. For
the micromagnetic distribution, the coordinates of the skyrmions are
extracted from the snapshots taken every 20 ps over 20 ns of simu-
lation time at T = 15 K. Panel b is generated over 105 Monte Carlo
steps.
Probability density function for two skyrmions in-
FIG. 10.
side a triangular model potential calculated following a Monte
Carlo algorithm. The temperatures are T = 1 K, T = 15 K and
T = 30 K, the edge lengths of the triangle are 30 nm, 45 nm and
60 nm. Probability distributions for the centers of the two skyrmions
are calculated over 105 Monte Carlo steps.
and an additional "phantom skyrmion" appears in the proba-
bility density function, in remarkable agreement with the mi-
cromagnetic results as analyzed before. By enlarging the size
of the island (second and third rows in Fig. 10 for 45 nm and
60 nm edge length), the energy surface becomes flatter, which
in turn leads to higher transition probabilities between the en-
ergy minima at the same temperature. Therefore, raising the
temperature or increasing the size of the system have similar
effects on the resulting probability density functions for the
skyrmions. Consequently, large island sizes or high tempera-
tures result in completely delocalized skyrmions as indicated
in the bottom right panel in Fig. 10.
solve the LLG equation,
mi(t) = − γ
1 + α2
mi × Beff
(cid:104)
i + αmi ×(cid:16)
(cid:17)(cid:105)
8
,
(2)
mi × Beff
i
for every simulation cell mi of the discretized magnetization
vector field. Here, γ0 = 1.76 × 1011(T−1s−1) is the gyro-
magnetic ratio of an electron and α is the Gilbert damping
parameter. The time- and space-dependent effective magnetic
field,
Beff
i (t) = Bext
i + Bexch
i + Bd
i + Ba
i + Bdmi
i + Bth
i (t) ,
(3)
i
i
;
the external field Bext
exchange in-
is composed of
teraction field Bexch
= 2Aexch/M sat∆mi, with Aexch
the saturation magne-
the exchange stiffness and M sat
i = M sat Kij ∗ mj,
tization; demagnetizing field Bd
where details on the calculation of
the demagnetiz-
ing kernel K can be found in Ref.40; uniaxial mag-
netocrystalline anisotropy field Ba
i = 2K u/M satmzez,
with K u the anisotropy constant; and the field gener-
ated by the Dzyaloshinskii-Moriya interaction Bdmi
=
2D/M sat(∂mz/∂x, ∂mz/∂y,−∂mx/∂x− ∂my/∂y)T , with
D the strength of the interfacial Dzyaloshinskii-Moriya in-
teraction. The simulation parameters were determined ex-
perimentally in Ref.7 based on the field dependence of the
skyrmion profile: M sat = 1.1 MA/m, D = 3.9 mJ/m2,
Aexch = 2 pJ/m, K u = 2.5 MJ/m3 and α = 0.05.
Additionally, an effective thermal field is included in Eq. (3)
i
as
(cid:115)
Bth
i = η
2αkBT
M satγ0∆V ∆t
,
(4)
where η is a random vector generated according to a standard
normal distribution independently for each simulation cell and
time step. kB is Boltzmann's constant, T is the temperature,
∆V is the size of the simulation cell and ∆t is the time step
of simulation.
During the simulations, the cell size was set to ∆V =
0.3 × 0.3 × 0.4 nm3. The linear size of the cell is comparable
to the lattice constant a = 0.271 nm of the Pd/Fe bilayer on
Ir(111). This means that the micromagnetic simulations per-
formed here should closely resemble the results of atomistic
simulations where the skyrmions collapse when their size be-
comes comparable to the lattice constant37,39, and where the
use of temperature-independent model parameters is justified.
The total skyrmion number N Sk in the simulations was cal-
culated via
(cid:90)
(cid:18) ∂m
∂x
m ·
× ∂m
∂y
(cid:19)
dxdy .
(5)
DISCUSSION
In this paper we studied the temperature-driven diffusive
motion of ensembles of magnetic skyrmions in finite mag-
netic islands. Based on experimentally determined system
parameters for ultrahin Pd/Fe bilayers on Ir(111), we per-
formed full-fledged micromagnetic simulations for various
nanoisland geometries. For moderate temperatures and exter-
nal magnetic fields, magnetic skyrmions with a long lifetime
are present in the system, so that the topological charge is con-
served. Our study of this model system showed two different
time scales on which the stochastic dynamics of skyrmions
takes place. On the short time scale (t ∼ 1 ps), the fluctu-
ating dynamics governed by the symmetric and antisymmet-
ric exchange interaction is most prominent, which essentially
leads to local deformations, exciting internal modes of the
skyrmions. In the long-time limit (t (cid:38) 10 ns), interactions
between pairs of skyrmions, as well as between the quasi-
particles and the boundaries, are dominant. These thermally
activated mechanisms lead to complicated time-averaged pic-
tures of the skyrmion distribution, where the number of quasi-
particles in the system is not immediately apparent. These
results can be compared directly to images obtained from
time-integrating measurement techniques such as SP-STM or
MFM, the time-resolution of which (∼ 5 ms37) is typically
much longer than the timescale of the inherent dynamics of
skyrmions. Our findings open an alternative way compared to
conventional interpretations of experimental results obtained
with scanning probe methods on mobile arrays of skyrmions,
by differentiating between the various time scales of magneti-
zation dynamics.
Furthermore, we proposed and developed a Monte Carlo
quasiparticle model, which can be of great use to efficiently
calculate the stochastic motion of larger systems of skyrmions
in arbitrarily shaped geometries. According to the results, the
time-averaged images of the micromagnetic simulations can
be qualitatively well reproduced by the probability density
distributions obtained from the simple quasiparticle model,
as long as it is possible to treat the skyrmions as stable ob-
jects with lifetimes significantly longer than the simulation
time at the given temperature. This method can be used to
describe larger systems containing more skyrmions at vari-
ous temperatures in a computationally efficient way, including
model applications in storage technology like racetrack mem-
ory devices. Here, not only the stability of the information bit
is important, but also its addressability, which is immediately
affected by the diffusive motion of the skyrmions.
METHODS
NSk =
1
4π
Micromagnetic
simulations. Finite-temperature mi-
cromagnetic calculations, using the open-source, GPU-
accelerated software package mumax340, were performed to
Processing of the micromagnetic results. For the results
shown in Fig. 6, the z component of the magnetization aver-
aged up to time t is stored in grayscale pictures as a matrix,
Aij(t) = (mz(xi, yj, t) + 1)/2, where xi and yj denote the
position of the micromagnetic simulation cell. The distance
induced by the Frobenius norm between the image averaged
up to time t, Aij(t), and the image averaged over the whole
simulation length τ = 20 ns, Aij(τ ) is divided by the square
root of the number of matrix elements and subtracted from 1,
yielding the matching parameter
M (t) = 1 −
(Aij(t) − Aij(τ ))2
NxNy
.
(6)
(cid:118)(cid:117)(cid:117)(cid:116) Nx(cid:88)
Ny(cid:88)
i=1
j=1
This procedure gives a matching parameter of 1 for a perfect
agreement of the compared pictures.
In order to determine the skyrmion radius as a function of
time in Fig. 7, firstly the contour lines where the z component
of the magnetization is zero are calculated for the skyrmion at
each time step. The contour lines are discretized on N points
in space, Li(t) = (xi(t), yi(t)), i ∈ (1, ..., N ). Subsequently,
the center of the skyrmion is calculated via
Li(t) ,
(7)
N(cid:88)
i=1
c(t) =
1
N
N(cid:88)
i=1
which in turn is used to obtain the average skyrmion radius
¯r(t) =
1
N
Li(t) − c(t) .
(8)
Finally, the radius is normalized with respect to the zero tem-
perature radius r0 obtained from the relaxed initial configura-
tion of choice.
Calculation of the skyrmion-skyrmion and skyrmion-
boundary interaction potentials. For the calculation of the
potential, the total energy of a stripe-shaped model system
(75 × 30 × 0.4 nm3) was investigated with micromagnetic
simulations for two different cases.
In the first case, Neu-
mann boundary conditions were used along the long side, and
a homogeneous magnetization was relaxed leading to a canted
rim. Afterwards a skyrmion was added to the system at a cer-
tain distance from the boundary. Because of the repulsive na-
ture of the interaction, a standard relaxation of the skyrmion
position was not suitable for determining the distance depen-
dence. Instead, we fixed the central magnetic moments in the
skyrmion (in a circular region of 0.9 nm diameter) at a specific
position and relaxed the magnetic texture in the other cells.
Analogously, in the second case the skyrmion-skyrmion inter-
action was calculated by fixing one skyrmion and changing
the position of the other skyrmion, using periodic boundary
conditions along both directions in the plane. From the ob-
tained total energies we subtracted a reference spectrum for a
homogeneously magnetized periodic surrounding around the
skyrmion fixed at different positions in the mesh. Small devi-
ations arising due to the finite mesh are mostly canceled out
by this procedure.
The results for the interaction strengths are shown in
Fig. 11. A smooth energy function rapidly decaying with
9
increasing distance between skyrmion and boundary is ob-
tained. For small distances between the boundary and a
skyrmion or between two skyrmions, a deformation of the
quasiparticles is visible in the micromagnetic simulations,
also leading to a bending of the potential in Fig. 11. Dur-
ing the construction of the quasiparticle model it is assumed
that the thermal energy kBT is lower than the energy value
where the potential function starts to bend, which is around
5 meV (60 K) for the skyrmion-skyrmion interaction potential
in Fig. 11.
In this regime it can be assumed that for suffi-
ciently short simulation times the strong deformation of the
skyrmions due to the interactions becomes exceedingly rare,
and the basic spin structure is maintained. This temperature
regime is in reasonable qualitative agreement with the range
where the escape, collapse or creation of skyrmions may also
be excluded, discussed in detail in Fig. 3.
It was shown
in Ref.33 that the interaction potentials in this regime may
be approximated by the exponential model function E(r) =
a exp(−r/b). This is confirmed by the simulation results in
Fig. 11, with the fitted model parameters a = 0.211 meV,
b = 1.343 nm for skyrmion-boundary (Sk-Bnd) repulsion and
a = 1.246 meV, b = 1.176 nm for skyrmion-skyrmion (Sk-
Sk) interaction. The similar characteristic length scales b be-
tween the two cases support that the same physical mecha-
nism is responsible for the interactions, namely the formation
of chiral noncollinear spin structures due to the DMI as dis-
cussed in the main text. The different values of the parameter
a can be reformulated as a shift of the exponential function
along the r axis. While this distance is measured between two
magnetization cells pointing oppositely to the homogeneous
background in the case of two skyrmions, in the case of the
skyrmion-boundary repulsion it is measured between the cen-
ter of the skyrmion and the magnetization at the edge which is
only slightly tilted from the homogeneous background, mean-
ing that the same interaction strength is reached at a smaller
distance in the latter scenario.
Quasiparticle simulations. For the calculation of the
stochastic motion of skyrmions following the quasiparticle ap-
proach, the Metropolis algorithm42 was utilized. With this
method,
the probability density function converges to the
Boltzmann distribution determined by the energy functional
of the system. For the triangular geometry, the potential sur-
face was computed by taking the superposition of the poten-
tials shown in Fig. 11 from the three boundaries for every grid
point of the chosen finite, rectangular mesh. The cell size
was ∆V = 0.5 × 0.5 × 0.4 nm. The initial positions of the
skyrmions were randomly chosen inside the confined struc-
ture, excluding the case in which both quasiparticles start from
the same simulation cell. At each time step, a possible adja-
cent position is selected for each skyrmion simultaneously via
pseudo-random numbers. If the energy of the attempted new
state, including interaction between the skyrmions, is lower
than the energy of the initial one, the skyrmion will move
there. If not, the transition into this state happens with a prob-
ability of p(∆E) = exp(−∆E/kBT ) following the Boltz-
mann distribution. Here ∆T = E2 − E1 is the energy dif-
ference between the final and the initial states, kB is Boltz-
mann's constant and T is the temperature. Subsequently, new
attempted positions are generated and accepted or refused as
before until a fixed number of simulation steps is reached.
10
FIG. 11. Potential energy depending on the skyrmion-skyrmion
and skyrmion-boundary distance. Micromagnetic interaction en-
ergies between skyrmion and skyrmion (blue squares), and be-
tween skyrmion and boundary (red circles) on a finite nanoisland.
Solid lines display exponential fits based on the model function
E(r) = ae−r/b; the fitting parameters are skyrmion-boundary (Sk-
Bnd): a = 0.211 meV, b = 1.343 nm; skyrmion-skyrmion (Sk-Sk):
a = 1.246 meV, b = 1.176 nm.
∗ Corresponding author. alexander.schaeffer@physik.uni-halle.de
1 Bogdanov, A. & Yablonskii, D. Thermodynamically stable vor-
tices in magnetically ordered crystals. The mixed state of magnets.
Zh. Eksp. Teor. Fiz 95, 178 -- 182 (1989).
2 Muhlbauer, S. et al. Skyrmion lattice in a chiral magnet. Science
323, 915 -- 919 (2009).
3 Nagaosa, N. & Tokura, Y. Topological properties and dynamics
of magnetic skyrmions. Nat. Nanotechnol. 8, 899 -- 911 (2013).
4 Dzyaloshinsky, I. A thermodynamic theory of weak ferromag-
netism of antiferromagnetics. J. Phys. Chem. Sol. 4, 241 -- 255
(1958).
5 Moriya, T. Anisotropic superexchange interaction and weak fer-
romagnetism. Phys. Rev. 120, 91 -- 98 (1960).
6 Heinze, S. et al. Spontaneous atomic-scale magnetic skyrmion
lattice in two dimensions. Nat. Phys. 7, 713 -- 718 (2011).
7 Romming, N., Kubetzka, A., Hanneken, C., von Bergmann, K.
& Wiesendanger, R. Field-dependent size and shape of single
magnetic skyrmions. Phys. Rev. Lett. 114, 177203 (2015).
8 Bogdanov, A. & Hubert, A. The stability of vortex-like structures
in uniaxial ferromagnets. J. Magn. Magn. Mater. 195, 182 -- 192
(1999).
9 Parkin, S. S., Hayashi, M. & Thomas, L. Magnetic domain-wall
racetrack memory. Science 320, 190 -- 194 (2008).
10 Sampaio, J., Cros, V., Rohart, S., Thiaville, A. & Fert, A. Nu-
cleation, stability and current-induced motion of isolated mag-
netic skyrmions in nanostructures. Nat. Nanotechnol. 8, 839 -- 844
(2013).
11 Tomasello, R. et al. A strategy for the design of skyrmion race-
track memories. Sci. Rep. 4, 6784 (2014).
12 Romming, N. et al. Writing and deleting single magnetic
skyrmions. Science 341, 636 -- 639 (2013).
13 Schaffer, A. F., Durr, H. A. & Berakdar, J. Ultrafast imprinting
of topologically protected magnetic textures via pulsed electrons.
Appl. Phys. Lett. 111, 032403 (2017).
14 Hanneken, C. et al. Electrical detection of magnetic skyrmions
by non-collinear magnetoresistance. Nat. Nanotechnol. 10, 1039 --
1042 (2015).
15 Gobel, B., Mook, A., Henk, J. & Mertig, I. Magnetoelectric ef-
fect and orbital magnetization in skyrmion crystals: Detection and
characterization of skyrmions. Phys. Rev. B 99, 060406 (2019).
16 Maccariello, D. et al. Electrical detection of single magnetic
skyrmions in metallic multilayers at room temperature. Nat. Nan-
otechnol. 13, 233 -- 237 (2018).
17 Slonczewski, J. C. Current-driven excitation of magnetic multi-
layers. J. Magn. Magn. Mater. 159, L1 -- L7 (1996).
18 Iwasaki, J., Mochizuki, M. & Nagaosa, N. Universal current-
velocity relation of skyrmion motion in chiral magnets. Nat. Com-
mun. 4, 1463 (2013).
19 Jonietz, F. et al. Spin transfer torques in MnSi at ultralow current
densities. Science 330, 1648 -- 1651 (2010).
20 Hagemeister, J., Romming, N., von Bergmann, K., Vedmedenko,
E. & Wiesendanger, R. Stability of single skyrmionic bits. Nat.
Commun. 6, 8455 (2015).
21 R´ozsa, L., Simon, E., Palot´as, K., Udvardi, L. & Szunyogh, L.
Complex magnetic phase diagram and skyrmion lifetime in an ul-
trathin film from atomistic simulations. Phys. Rev. B 93, 024417
(2016).
22 Lobanov, I. S., J´onsson, H. & Uzdin, V. M. Mechanism and activa-
tion energy of magnetic skyrmion annihilation obtained from min-
imum energy path calculations. Phys. Rev. B 94, 174418 (2016).
23 Bessarab, P. F. et al. Lifetime of racetrack skyrmions. Sci. Rep. 8,
3433 (2018).
24 von Malottki, S., Dup´e, B., Bessarab, P., Delin, A. & Heinze,
S. Enhanced skyrmion stability due to exchange frustration. Sci.
Rep. 7, 12299 (2017).
25 Schutte, C., Iwasaki, J., Rosch, A. & Nagaosa, N. Inertia, diffu-
sion, and dynamics of a driven skyrmion. Phys. Rev. B 90, 174434
(2014).
26 Miltat, J., Rohart, S. & Thiaville, A. Brownian motion of mag-
netic domain walls and skyrmions, and their diffusion constants.
Phys. Rev. B 97, 214426 (2018).
27 Z´azvorka, J. et al. Thermal skyrmion diffusion used in a reshuffler
device. Nat. Nanotechnol. 1 (2019).
28 Lin, S.-Z., Reichhardt, C., Batista, C. D. & Saxena, A. Particle
model for skyrmions in metallic chiral magnets: Dynamics, pin-
ning, and creep. Phys. Rev. B 87, 214419 (2013).
29 Reichhardt, C., Ray, D. & Reichhardt, C. J. O. Collective transport
properties of driven skyrmions with random disorder. Phys. Rev.
Lett. 114, 217202 (2015).
30 Thiele, A. A. Steady-state motion of magnetic domains. Phys.
Rev. Lett. 30, 230 -- 233 (1973).
31 Wiesendanger, R. Spin mapping at the nanoscale and atomic
scale. Rev. Mod. Phys. 81, 1495 -- 1550 (2009).
32 Martin, Y. & Wickramasinghe, H. K. Magnetic imaging by force
microscopywith 1000 A resolution. Appl. Phys. Lett. 50, 1455 --
1457 (1987).
33 Lin, S.-Z., Reichhardt, C., Batista, C. D. & Saxena, A. Particle
model for skyrmions in metallic chiral magnets: Dynamics, pin-
ning, and creep. Phys. Rev. B 87, 214419 (2013).
34 R´ozsa, L. et al. Skyrmions with attractive interactions in an ultra-
thin magnetic film. Phys. Rev. Lett. 117, 157205 (2016).
35 Bottcher, M., Heinze, S., Egorov, S., Sinova, J. & Dup´e, B. B -- T
phase diagram of Pd/Fe/Ir (111) computed with parallel tempering
Monte Carlo. New J. Phys. 20, 103014 (2018).
36 Gilbert, T. L. A phenomenological theory of damping in ferro-
magnetic materials. IEEE Trans. Magn. 40, 3443 -- 3449 (2004).
37 Leonov, A. et al. The properties of isolated chiral skyrmions in
thin magnetic films. New J. Phys. 18, 065003 (2016).
38 R´ozsa, L., Hagemeister, J., Vedmedenko, E. Y. & Wiesendanger,
R. Localized spin waves in isolated k π skyrmions. Phys. Rev. B
98, 224426 (2018).
39 Siemens, A., Zhang, Y., Hagemeister, J., Vedmedenko, E. &
Wiesendanger, R. Minimal radius of magnetic skyrmions: stat-
ics and dynamics. New J. Phys. 18, 045021 (2016).
40 Vansteenkiste, A. et al. The design and verification of MuMax3.
AIP Advances 4, 107133 (2014).
11
41 Rohart, S. & Thiaville, A. Skyrmion confinement in ultrathin film
nanostructures in the presence of Dzyaloshinskii-Moriya interac-
tion. Phys. Rev. B 88, 184422 (2013).
42 Metropolis, N. et al. Equation of state calculations by fast com-
puting machines. J. Chem. Phys. 21, 1087 -- 1092 (1953).
ACKNOWLEDGEMENTS
Financial
support was provided by the Deutsche
Forschungsgemeinschaft
(DFG) via CRC/TRR 227 and
SFB 762, by the European Union via the Horizon 2020
research and innovation program under Grant Agreement
No. 665095 (MAGicSky), by the Alexander von Humboldt
Foundation, and by the National Research, Development and
Innovation Office of Hungary under Project No. K115575.
AUTHOR CONTRIBUTIONS
A.F.S. conducted and analyzed the micromagnetic and
quasiparticle Monte Carlo simulations. E.Y.V. proposed and
developed a general concept of this investigation. All authors
discussed the results and contributed to the manuscript.
COMPETING INTERESTS STATEMENT
The authors declare no competing financial interests.
DATA AVAILABILITY
The code and the data that support this work's findings are
available from the corresponding author on request.
|
1608.03879 | 1 | 1608 | 2016-08-12T19:21:14 | Magnetotransport signatures of the proximity exchange and spin-orbit couplings in graphene | [
"cond-mat.mes-hall"
] | Graphene on an insulating ferromagnetic substrate---ferromagnetic insulator or ferromagnetic metal with a tunnel barrier---is expected to exhibit giant proximity exchange and spin-orbit couplings. We use a realistic transport model of charge-disorder scattering and solve the linearized Boltzmann equation numerically exactly for the anisotropic Fermi contours of modified Dirac electrons to find magnetotransport signatures of these proximity effects: proximity anisotropic magnetoresistance, inverse spin-galvanic effect, and the planar Hall resistivity. We establish the corresponding anisotropies due to the exchange and spin-orbit couplings, with respect to the magnetization orientation. We also present parameter maps guiding towards optimal regimes for observing transport magnetoanisotropies in proximity graphene. | cond-mat.mes-hall | cond-mat | a
Magnetotransport signatures of the proximity exchange and spin-orbit couplings in
graphene
Jeongsu Lee∗ and Jaroslav Fabian
Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
Graphene on an insulating ferromagnetic substrate -- ferromagnetic insulator or ferromagnetic
metal with a tunnel barrier -- is expected to exhibit giant proximity exchange and spin-orbit cou-
plings. We use a realistic transport model of charge-disorder scattering and solve the linearized Boltz-
mann equation numerically exactly for the anisotropic Fermi contours of modified Dirac electrons
to find magnetotransport signatures of these proximity effects: proximity anisotropic magnetoresis-
tance, inverse spin-galvanic effect, and the planar Hall resistivity. We establish the corresponding
anisotropies due to the exchange and spin-orbit coupling, with respect to the magnetization orien-
tation. We also present parameter maps guiding towards optimal regimes for observing transport
magnetoanisotropies in proximity graphene.
PACS numbers: 72.20.Dp 72.80.Vp 73.22.Pr 73.63.-b
Dirac electrons in pristine graphene have wesizableak
spin-orbit coupling [1] and no magnetic moments, lim-
iting prospects for spintronics [2]. This can be partly
remedied by functionalizing graphene with adatoms and
admolecules, which can induce sizable local magnetic mo-
ments and spin-orbit coupling, leading to marked spin
transport fingerprints [3 -- 8]. A more systematic and, im-
portant, spatially uniform way to induce spin properties
in graphene is by proximity effects. Being essentially a
surface (or two), graphene can "borrow" properties from
its substrates. Placing graphene on a slab of a ferromag-
netic insulator, or a ferromagnetic metal with a tunnel
barrier, is expected to induce giant proximity exchange
as well as spin-orbit coupling in the Dirac electron band
structure. This is supported by first principles calcula-
tions [9 -- 13] as well as by recent experiments on graphene
on yttrium iron garnet [14, 15] and on graphene on EuS
[16]. In effect, proximity graphene on ferromagnetic sub-
strates should be an ultimately thin ferromagnetic layer,
with giant spin-orbit coupling, forming a perfect play-
ground for both spintronics experiment and theory [17].
An important question is: what transport ramifica-
tions can we expect in such a magnetic graphene with
strong spin-orbit coupling? On one hand, in ferromag-
netic metals the exchange coupling is typically much
greater than spin-orbit coupling. On the other hand,
in semiconductor heterostructures, which are the best
case studies for structure-induced spin-orbit coupling in
its transport signatures [18, 19], there is no ferromag-
netic exchange and spin splitting can be due to the Zee-
man interaction which is, for realistic values of magnetic
field, much weaker than spin-orbit coupling. Proxim-
ity graphene should be intermediate between those two
extremes: the proximity exchange and spin-orbit cou-
plings are expected to be similar, on the order of 1 - 10
meV [9, 10, 20]. Perhaps the main effect of the interplay
of exchange and spin-orbit couplings -- magnetotransport
anisotropies -- should be well pronounced and make for
useful, experimentally testable signatures of the spin
proximity effects.
In this paper we solve numerically exactly a realistic
Boltzmann transport model, with long-range charge scat-
terers, for Dirac electrons in the presence of proximity
exchange and spin-orbit couplings. We start with the
anisotropic band structure, as in Fig. 1, and explore its
ramifications in transport. Specifically, we introduce and
calculate the proximity anisotropic magnetoresistance, as
an analog of the anisotropic lateral magnetoresistance
in ferromagnetic metal/insulator slabs [21], characteriz-
ing interfacial spin-orbit fields. We also present magne-
toanisotropies of the planar Hall effect and inverse spin-
galvanic effect. Finally, we give parameter maps indicat-
FIG. 1. (Color online). Scheme of magnetoanisotropic trans-
port experiment in proximity graphene. Polar (θ) and az-
imuthal (φ) angles define the magnetization orientation with
respect to the applied electric field. (a) Linear energy dis-
persion of pristine graphene can be modified by (b) (intrin-
sic and Bychkov-Rashba) spin-orbit coupling or (c) exchange
field, both leading to spin splitting. (d) The interplay of the
two interactions makes the bands anisotropic with respect to
the magnetization orientation, here shown as out-of-plane and
in-plane.
ESOC (a) intrinsic(b) proximity SOC(c) proximity exchange(d) SOC and exchangeEEESOC + exchange exchange Ein-planeout-of-planeMagnetic Insulator mI ✓EmzkEk contours shifted relative to each other.
2
To investigate electrical transport, we solve the lin-
earized Boltzmann equation for the above model, assum-
ing spatial homogeneity. In the presence of a longitudinal
electric field E, the non-equilibrium distribution function
is f = f0 + δf , where f0 is the equilibrium Fermi-Dirac
function. We use the ansatz δf = −e(−∂f0/∂E)u·E and
consider long-range Coulomb scattering, which is the es-
tablished model for resistivity in graphene [23]. The un-
known vector u is found by solving the integral equation
(obtained from the Boltzmann equation in linear order
in E),
v(k) = 2πni(vF rs)2
×(cid:72)
(cid:48)
dk
∇k(cid:48) Ek(cid:48) F (k,k
q2ε(q)2 [u(k) − u(k(cid:48))] ,
(cid:48)
)
EF
(2)
where Ek is the energy corresponding to wave vector k,
v(k) is the group velocity, ni is the concentration of scat-
terers, the effective fine structure constant rs ≈ 0.8 [24],
F (k, k(cid:48)) = Ψ(k)†Ψ(k(cid:48))2 is the overlap between the in-
cident (k) and scattered (k(cid:48)) states Ψ. For example, for
pristine graphene F (k, k(cid:48)) = (1 + cos θkk(cid:48))/2. For sim-
plicity, spin and pseudospin indices are implicit in the
momentum labels k. The integral is over the Fermi con-
tour of Fermi energy EF , and the transferred momentum
is q = k−k(cid:48). The dielectric function ε is calculated from
the random phase approximation [24 -- 26].
ε(q) =(cid:26) 1+ qs
q
1+ πrs
2 + qs
q − qs
√
q2−4k2
2q2
F
−rs sin
−1( 2kF
if q≤2kF
q ) if q>2kF
,(3)
where qs = 4kF rs. The Fermi wave vector kF is taken
from the pristine graphene case corresponding to a given
electron density. The integral equation, Eq. (2), is solved
numerically exactly [27], taking the energy spectrum and
eigenstates of the effective hamiltonian, Eq. (1).
Knowing vectors u for the Fermi contour momenta k,
the conductivity tensor is obtained from,
viujδ(Ek − EF ).
(4)
(cid:90) dk
2π
σij =
e2
h
We plot the calculated longitudinal conductivity of
graphene as a function of carrier density n, with and
without proximity effects, in Fig. 3(a). We use ni = 80×
1010 cm−2 as a representative density of long-range scat-
terers. The carrier density, unlike in pristine graphene,
depends not only on the Fermi level but also on the
strength of the proximity interactions, λI and λex,
n(EF ) = 2 × 1
2π
F + 2EF λI + λ2
ex
(5)
(cid:3) /(vF ).
(cid:2)E2
The factor 2 takes into account the valley degeneracy.
The carrier density is independent of λBR and the di-
rection of the magnetization. In all the plots we fix the
(Color online). Fermi contours and spin texture
FIG. 2.
(left), and the band structure along kx (middle) and ky (right)
for different directions of the exchange field. The direc-
tion of the exchange field is indicated by the large arrows;
small arrows give the spin projections. (a) The out-of-plane
(OOP) exchange field separates two spin subbands, while the
Bychkov-Rashba field leads to a distinctive spin texture de-
pending on the z-projection of the real spin, which interacts
with exchange field.
(b) The in-plane (IP) exchange field
splits the bands, but also deforms the Fermi circles. We
used EF = 100 meV, λI = 0 meV, λBR = 10 meV, and
λex = 25 meV.
ing regions of large transport magnetoanisotropies.
Dirac electrons in graphene in the presence of proxim-
ity exchange and spin-orbit couplings are described by
the minimal Hamiltonian [17],
H = H0 + HI + HBR + Hex.
(1)
pristine
Here,
graphene Hamiltonian is H0 =
vF (τzσxkx + σyky) with pseudospin (sublattice) Pauli
matrices σσσ and τz = ±1 for K and K(cid:48) points. The Fermi
velocity is vF = (3/2)ta0 ≈ 8.6 × 107 cm/s for t = 2.7
eV and the inter-atomic distance of carbons in graphene
a0 = 1.42 A[22]. The proximity intrinsic-like spin-orbit
coupling is given by the Hamiltonian HI = λI τzσzsz,
with parameter λI and (true) spin Pauli matrices s. The
intrinsic coupling opens a gap of 2λI . The Bychkov-
Rashba Hamiltonian, HBR = λBR(τzσxsy − σysx), with
parameter λBR describes the proximity spin-splitting due
to spin-orbit coupling and lack of space inversion sym-
metry. Finally, the spin-dependent hybridization with
the ferromagnet leads to a proximity exchange, Hex =
λexm·s with parameter λex and magnetization orienta-
tion m.
There are two important magnetic configurations to
consider: out-of-plane and in-plane magnetizations, de-
picted in Fig. 2 (see also Fig. 1).
In the out-of-plane
case the spin up and spin down bands are spin split, but
the band structure (and thus Fermi contour) remains
isotropic. On the other hand, in the in-plane case the
band structure is markedly anisotropic, with the Fermi
kxkxkykykxkxkyky 3
(Color online).
FIG. 4.
(a) Calculated proximity induced
anisotropic magnetoresistance (PAMR) and (b) planar Hall
resistivity are shown when the exchange field is in-plane (θ =
π/2) for λBR = 20 meV. PAMR quantifies the longitudinal
magnetoresistance as a function of magnetization orientation
φ. The interplay of spin-orbit coupling and exchange field
leads to a net anisotropic resistivity with C2v symmetry while
the off diagonal elements of the resistivity tensor are non-zero.
Other parameters are n = 1012 cm−2, λI = 0 meV, λex =
10 meV. The insets are polar plot representations.
Rashba field, a spin density transverse to the current
appears as a demonstration of the inverse spin-galvanic
effect [28 -- 30] . The shift of the spin subbands due to the
electric field, combined with the spin texture due to the
Bychkov-Rashba spin-orbit interaction, leads to a spin
polarization. This is also expected to happen in graphene
[31, 32], along with the spin-galvanic effect [33, 34]. The
non-equilibrium spin density caused by the electric field
can be calculated as,
δ(cid:104)S(cid:105) =
(cid:90)
dk
(2π)2 δf (k)s(k),
(6)
where s(k) is the spin (represented by Pauli matrices s)
expectation value of the state k. For our proximity model
in the presence of long-range Coulomb scatterers, the cal-
culated inverse spin-galvanic effect is shown in Fig. 3(b)
as a function of exchange coupling. With increasing mag-
netization the induced transverse spin is reduced, as the
exchange coupling aligns the spins and deforms the ro-
tational spin texture of the Bychkov-Rashba field. The
spin densities can be giant. In fields of 1 V/µm, which
FIG. 3.
(a) (Color online). Calculated longitudinal conduc-
tivity as a function of carrier density, for pristine and proxim-
ity graphene. For proximity graphene we show the conductiv-
ity in the presence of Bychkov-Rashba and exchange coupling
only, and in the presence of intrinsic spin-orbit coupling only.
(b) Inverse spin-galvanic effect (scheme in the left inset) in
proximity graphene. Spin density induced (and normalized)
by electric field (which is along x-axis) with respect to the
exchange interaction, when the magnetization is out-of-plane
(OOP) and in-plane (IP). In-plane magnetization can be ei-
ther parallel (along x-ais) or perpendicular (along y-axis) to
the electric field E. In the right inset, the angle dependance of
Sy(φ) is shown in the polar plot with ∆Sy = Sy−Smin
, for the
electric field E = 1 V/cm, and for λex = 10 meV in percent-
y = Sy(EM). The carrier density in
age with respect to Smax
this plot is n = 1012 cm−2 and λI = 0 meV, λBR = 20 meV.
y
carrier density, instead of the Fermi level. The conduc-
tivity for three different combinations of parameters is
shown in Fig. 3(a). The linear dependence on n is well
reproduced. While λBR and λex bring about relatively in-
significant changes ((cid:46) 2.5 %), the presence of λI =10 meV
lowers the conductivity by about ∼10 % at a fixed car-
rier density. Thus, in terms of modifying the magni-
tude of the conductivity, the proximity effects (unless not
inducing additional scattering, which would need to be
investigated case-by-case) are rather weak, being more
pronounced with the inclusion of the intrinsic spin-orbit
coupling, than with the Bychkov-Rashba and exchange
effects. However, as we will see shortly, the anisotropic
effects are quite pronounced.
When current flows in the presence of a Bychkov-
������������������n/niσxx(e2/h)λI=λBR=λex=0λI=0,λBR=λex=10λI=10,λBR=λex=0ni=80×1010cm-2(a) ������������������������������λex(meV)<Sy>(107cm-2)OOPIP(EM)IP(E⟂M)E=1V/cm(b) Sjinv. spin-galvanicSy/Smaxy(%)10y x �π�π-���-���-���-������ϕPAMR(%)θ=π/���(a) �π�π-�-����ϕρxy(Ω)θ=π/���(b) 4
FIG. 5. (Color online). Parameter maps of PAMR(θ = π/2, φ = π/2). (a) PAMR as a function of λBR and λI , for a fixed
λex = 10 meV. (b) PAMR as a function of λBR and λex, for λI = 0. Note that PAMR changes sign around the λBR = λex line.
In both maps the carrier density is 1012 cm−2.
are still achievable in graphene, the spin density could
reach 1011 cm−2, corresponding to about 10% of spin
polarization. The largest induced spin accumulation is
in the out-of-plane configuration for large exchange. The
magnetoanisotropy of the inverse spin-galvanic effect can
be very large, as seen in Fig. 3(b). The presence of the
current-induced spin accumulation, as well as its mag-
netoanisotropy, could be detected in the same proximity
structure, by measuring the transverse voltage, as in non-
local spin injection [2].
To quantify the transport magnetoanisotropy, we in-
troduce proximity induced anisotropic magnetoresistance
(PAMR), as a ratio of the resistivities R (or conductiv-
ities σ) for a given magnetization orientation (θ, φ) (see
Fig. 1),
PAMR[E] =
=
R(θ, φ) − R(θ, 0)
σxx(θ, 0) − σxx(θ, φ)
R(θ, 0)
σxx(θ, φ)
,
(7)
analogously to the tunneling anisotropic magnetoresis-
tance effect [35 -- 37]. PAMR refers to the changes in the
longitudinal magnetoresistance as the magnetization di-
rection varies with respect to the direction of the external
electric field that drives the current. When the magne-
tization is out-of-plane (θ = 0), the broken time reversal
symmetry and strong spin-orbit coupling can lead to the
novel quantum anomalous Hall effect [10], or crystalline
magnetoanisotropy [21]. However, here we focus on the
regime in which PAMR is most pronounced (θ = π/2).
As shown in Fig. 4(a), PAMR exhibits a C2v symme-
try due to the interplay between the Bychkov-Rashba
and exchange interactions. The expected magnitudes of
PAMR are about 1%, similar to what is observed in ferro-
magnetic metals [21]. The anisotropic resistivity tensor
has non-zero off-diagonal elements due to the presence
of exchange and spin-orbit couplings. This leads to the
planar Hall effect, shown in Fig. 4(b). The magnitude of
the planar Hall effect could reach up to 4 Ω which greater
than the typical values studied in metallic ferromagnetic
systems [38].
What values can PAMR reach for a reasonable range
of proximity parameters? Figure 5 shows two parameter
maps, one with the Bychkov-Rashba and intrinsic, the
other with the Bychkov-Rashba and exchange couplings.
We see two distinct features.
(i) First, in Fig. 5(a) a
horizontal line around λBR ∼ λex ≈ 10 meV separates
two regions. For λBR (cid:46) 10 meV, increasing λI increases
PAMR. For λBR (cid:38) 10 meV, PAMR initially increases
with increasing λI , reaching a maximum of about 1 %
around λI ∼ 7 meV, beyond which PAMR decreases. (ii)
Second, in Fig. 5(b) the line λBR = λex marks a sharp
crossover between weak and strong PAMR. However, this
crossover is not uniform. PAMR is largest for large values
of both λex and λBR slightly greater than λex. The reason
why this region gives the largest PAMR (more than 1%)
is that in this parameter range there is a band crossing
between the strongly spin-orbit coupled subbands.
In conclusion, we used a realistic transport model to
predict magnetotransport anisotropies in graphene with
proximity exchange and spin-orbit couplings. We predict
marked anisotropies in the magnetoresistance, with sim-
ilar values as reached in ferromagnetic metal junctions
and slabs. The calculated PAMR depends strongly on
(a) (b) the spin-orbit coupling and exchange parameters. We
also calculated the magnetoanisotropies of the planar
Hall and inverse spin-galvanic effects. All these magne-
toanisotropies should be a sensitive tool to probe prox-
imity effects in graphene.
We thank Denis Kochan, Jonathan Eroms, and Cosimo
Gorini for useful discussions. This work was supported
by the DFG SFB 689 and the European Union Sev-
enth Framework Programme under Grant Agreement No.
604391 Graphene Flagship.
∗ jeongsu.lee@physik.uni-regensburg.de
[1] M. Gmitra, S. Konschuh, C. Ertler, C. Ambrosch-Draxl,
and J. Fabian, Phys. Rev. B 80, 235431 (2009).
[2] I. Zuti´c, J. Fabian, and S. Das Sarma, Rev. Mod. Phys.
76, 323 (2004).
[3] D. Kochan, M. Gmitra, and J. Fabian, Phys. Rev. Lett.
112, 116602 (2014).
[4] J. Bundesmann, D. Kochan, F. Tkatschenko, J. Fabian,
and K. Richter, Phys. Rev. B 92, 081403 (2015).
[5] D. Van Tuan and S. Roche, Phys. Rev. Lett. 116, 106601
(2016).
[6] A. Ferreira, T. G. Rappoport, M. A. Cazalilla,
and
A. H. Castro Neto, Phys. Rev. Lett. 112, 066601 (2014).
[7] J. Wilhelm, M. Walz, and F. Evers, Phys. Rev. B 92,
014405 (2015).
[8] M. R. Thomsen, M. M. Ervasti, A. Harju, and T. G.
Pedersen, Phys. Rev. B 92, 195408 (2015).
[9] H. X. Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche,
and M. Chshiev, Phys. Rev. Lett. 110, 046603 (2013).
[10] Z. Qiao, W. Ren, H. Chen, L. Bellaiche, Z. Zhang, A. H.
MacDonald, and Q. Niu, Phys. Rev. Lett. 112, 116404
(2014).
[11] P. Lazi´c, K. D. Belashchenko, and I. Zuti´c, Phys. Rev.
B 93, 241401 (2016).
[12] C. B. Crook, C. Constantin, T. Ahmed, J.-X. Zhu, A. V.
Balatsky, and J. T. Haraldsen, Sci. Rep. 5, 12322 (2015).
and J. Fabian,
[13] K. Zollner, M. Gmitra, T. Frank,
arXiv:1607.08008 (2016).
[14] Z. Wang, C. Tang, R. Sachs, Y. Barlas, and J. Shi, Phys.
Rev. Lett. 114, 016603 (2015).
[15] J. C. Leutenantsmeyer, A. A. Kaverzin, M. Wojtaszek,
and B. J. van Wees, arXiv:1601.00995 (2016).
[16] P. Wei, S. Lee, F. Lemaitre, L. Pinel, D. Cutaia, W. Cha,
F. Katmis, Y. Zhu, D. Heiman, J. Hone, J. S. Moodera,
5
and C.-T. Chen, Nat. Mater. advance online publication,
DOI: 10.1038 (2016).
[17] W. Han, R. K. Kawakami, M. Gmitra, and J. Fabian,
Nat. Nanotechnol. 9, 794 (2014).
[18] M. Trushin and J. Schliemann, Phys. Rev. B 75, 155323
(2007).
[19] O. Chalaev and D. Loss, Phys. Rev. B 77, 115352 (2008).
[20] A. Avsar, J. Y. Tan, T. Taychatanapat, J. Balakrishnan,
G. K. W. Koon, Y. Yeo, J. Lahiri, A. Carvalho, A. S.
Rodin, E. C. T. O'Farrell, G. Eda, A. H. Castro Neto,
and B. Ozyilmaz, Nat. Commun. 5, 4875 (2014).
[21] T. Hupfauer, A. Matos-Abiague, M. Gmitra, F. Schiller,
and
J. Loher, D. Bougeard, C. H. Back, J. Fabian,
D. Weiss, Nat. Commun. 6, 7374 (2015).
[22] N. M. R. Peres, Rev. Mod. Phys. 82, 2673 (2010).
[23] S. Adam, E. H. Hwang, V. M. Galitski,
and
S. Das Sarma, Proc. Natl. Acad. Sci. U.S.A. 104, 18392
(2007).
[24] E. H. Hwang and S. Das Sarma, Phys. Rev. B 75, 205418
(2007).
[25] E. H. Hwang, S. Adam, and S. Das Sarma, Phys. Rev.
Lett. 98, 186806 (2007).
[26] E. H. Hwang and S. Das Sarma, Phys. Rev. B 77, 195412
(2008).
[27] We discretize the Fermi contour (100 to 500 points usu-
ally suffice) and solve the resulting sets of linear equations
algebraically.
[28] S. D. Ganichev, E. L. Ivchenko, V. V. Bel'kov, S. A.
Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider, and
W. Prettl, Nature (London) 417, 153 (2002).
[29] S. Ganichev and W. Prettl, Intense terahertz excitation
of semiconductors (Oxford University, New York, 2006).
[30] S. D. Ganichev and L. E. Golub, Phys. Status Solidi B
251, 1801 (2014).
[31] A. Dyrda(cid:32)l, M. Inglot, V. K. Dugaev, and J. Barna´s,
Phys. Rev. B 87, 245309 (2013).
[32] A. Dyrda(cid:32)l, J. Barna´s, and V. K. Dugaev, Phys. Rev. B
89, 075422 (2014).
[33] Ka Shen, G. Vignale, and R. Raimondi, Phys. Rev. Lett.
112, 096601 (2014).
[34] J. S´anchez, L. Vila, G. Desfonds, S. Gambarelli, J. P. At-
tan´e, J. M. De Teresa, C. Mag´en, and A. Fert, Nat.
Commun. 4, 2944 (2013).
[35] A. Matos-Abiague, M. Gmitra,
and J. Fabian, Phys.
Rev. B 80, 045312 (2009).
[36] A. Matos-Abiague and J. Fabian, Phys. Rev. B 79,
155303 (2009).
[37] L. Brey, C. Tejedor, and J. Fern´andez-Rossier, Appl.
Phys. Lett. 85, 1996 (2004).
[38] H. X. Tang, R. K. Kawakami, D. D. Awschalom, and
M. L. Roukes, Phys. Rev. Lett. 90, 107201 (2003).
|
1311.5678 | 1 | 1311 | 2013-11-22T08:53:53 | Electronic and Transport Properties of Molecular Junctions under a Finite Bias: A Dual Mean Field Approach | [
"cond-mat.mes-hall"
] | We show that when a molecular junction is under an external bias, its properties can not be uniquely determined by the total electron density in the same manner as the density functional theory (DFT) for ground state (GS) properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived.By generalizing the Thomas-Fermi-Dirac (TFD) model to non-equilibrium cases, we analytically derived the DMF exchange energy density functional. We implemented the DMF approach into the computational package SIESTA to study non-equilibrium electron transport through molecular junctions. Calculations for a graphene nanoribbon (GNR) junction show that compared with the commonly used \textit{ab initio} transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region. | cond-mat.mes-hall | cond-mat |
Electronic and Transport Properties of Molecular Junctions under a Finite Bias: A
Dual Mean Field Approach
Shuanglong Liu1, Yuan Ping Feng1, and Chun Zhang1,2∗
1Department of Physics and Graphene research centre,
National University of Singapore, 2 Science Drive 3, Singapore 117542
2Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
We show that when a molecular junction is under an external bias, its properties can not be
uniquely determined by the total electron density in the same manner as the density functional
theory (DFT) for ground state (GS) properties.
In order to correctly incorporate bias-induced
nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total
electron density together with the density of current-carrying electrons are sufficient to determine
the properties of the system. Two mean fields, one for current-carrying electrons and the other
one for equilibrium electrons can then be derived. Calculations for a graphene nanoribbon (GNR)
junction show that compared with the commonly used ab initio transport theory, the DMF approach
could significantly reduce the electric current at low biases due to the non-equilibrium corrections
to the mean field potential in the scattering region.
Since the pioneering work of Aviram and Ratner1,
molecular electronics has attracted a great deal of in-
terests due to its promise for future electronics technol-
ogy. The central topic in theoretical research of molecular
electronics is to understand the quantum electron trans-
port at the molecular level by relating the electric cur-
rent passing through the molecular junction to its intrin-
sic electronic properties. The commonly used ab initio
approach combines the quantum transport theory based
on non-equilibrium Green's function (NEGF) techniques
and the computational method based on density func-
tional theory (DFT).2,3 The approach has been applied to
describe the quantum electron transport through various
types of molecular junctions.4 -- 8, and great success has
been achieved in understanding quantum electron trans-
port and also inspiring novel applications in molecular
electronics.
Despite its great success, there are still two problems
in the current approach: 1) whether or not the DFT is
good enough for molecular junctions under a finite bias is
questionable, and 2) when quantitatively compared with
experiments, in most cases, theoretically calculated elec-
tric current is significantly higher. For some molecular
junctions, there might be orders of magnitude differences
between experiment and theory. 4,5,9 In this paper, we
examine in details the bias-induced noneqiulibrium ef-
fects in molecular junctions that are neglected in the
current approach and propose a new ab initio method
to incorporate these nonequilibrium effects.
Molecular junctions connected with two reservoirs can
be modeled as open systems with the general structure
shown in Fig. 1. The system is divided into three re-
gions: left, right reservoirs, and the molecular-scale scat-
tering region in the middle. Electrons in two reservoirs
are assumed to be in their local equilibrium and can be
described by single-electron or mean-field Hamiltonians
∗Electronic address: phyzc@nus.edu.sg
Scattering
Region
Left
Reservoir
Right
Reservoir
Molecular Center
FIG. 1: A molecular scale junction consists of an interact-
ing scattering region and two non-interacting reservoirs. At
t = −∞, an infinitely high single-electron barrier potential
(the gray line) is applied at the left contact so that no elec-
tric current is flowing through. The barrier potential slowly
decreases to zero from t = −∞ to t = 0. The system reaches
the desired non-equilibrium steady state at t = 0.
(HL and HR for left and right reservoirs respectively) so
that two constant chemical potentials µl and µr can be
defined in left and right reservoirs respectively. The bias
voltage across the system can then be defined by the dif-
ference between chemical potentials in two reservoirs as
Vb = (µl − µr)/e. Electrons in the scattering region are
described by an interacting Hamiltonian HS. The total
Hamiltonian for such an open system can be written as
H = HL + HR + HS + HT where HT is the tunneling
term. The goal of the transport theory is to relate the
electronic and transport properties of the steady state
of the system to the Hamiltonian and the voltage bias,
which is extremely difficult (if not impossible) with the
presence of the complicated interaction term HS in the
scattering region.
For simplicity, we set the temperature to be zero
throughout the paper. When µl equals µr, the whole sys-
tem is in equilibrium; the DFT is applicable, and then
the interaction term HS can be replaced by the mean-
field DFT Hamiltonian. Using NEGF techniques, the
mean-field Schrodinger equation together with the open-
system boundary conditions can be solved,10,11 and in
turn the electronic properties can be worked out.
In
practice, due to the problems of existing DFT function-
als and also the fact that the conductance calculations
rely on single-electron orbital, calculations may not be
accurate.12 -- 19 When µl is not the same as µr, the sit-
uation however is different. In this case, the scattering
region is driven out of equilibrium, and whether or not
its electronic structures in principle can be described by
DFT needs to be carefully examined.
Theoretically, the non-equilibrium steady state of the
junction can be achieved by the following adiabatic time-
dependent process. At beginning t = −∞, an infinitely
high single-electron barrier potential is applied at the left
contact as shown in Fig. 1 so that there is no electric cur-
rent flowing through the system. The two parts separated
by the barrier can be denoted as LB (the part on the left
of the barrier) and RB (the part on the right of the bar-
rier). The coupling between LB and RB is then gradually
turned on by slowly decreasing the barrier potential to
zero from t = −∞ to t = 0. The final state at t = 0 is the
non-equilibrium steady state we desire. For such a time-
dependent system, the Runge-Gross (RG) theorem, the
foundation of time-dependent DFT,20 claims that the ex-
ternal potential at time t, vext(r, t), can be uniquely de-
termined by the time-dependent electron density ρ(r, t)
together with the initial state ψ(t = −∞) up to a triv-
ial additive time-dependent function c(t). If initially the
system is in a stationary ground state, the initial state
ψ(t = −∞) itself is a functional of initial electron den-
sity ρ(r, t = −∞) according to the first Hohenberg-Kohn
(HK) theorem21, and then the initial-state dependence
of the external potential in RG theorem can be elimi-
nated. As a result, at t = 0, the external potential and
in turn the Hamiltonian can be uniquely determined by
ρ(r, t = 0), justifying the commonly used ab initio trans-
port theory that combines DFT and NEGF.
Unfortunately, when the external bias Vb is not zero,
initially (t = −∞), the system is in a non-equilibrium
state instead of a stationary ground state. The non-
equilibrium initial state consists of two separated parts,
LB and RB, each of which is in its own equilibrium.
From the first HK theorem, we know that the exter-
nal potential of each part at t = −∞ can be deter-
mined by its electron density up to an arbitrary con-
stant. Combining two parts together, the external po-
tential of the whole system at t = −∞ is determined by
ρ(r, t = −∞) in whole space up to two independent ar-
bitrary constants cl (from LB) and cr (from RB), which
can be expressed as vext(r, t = −∞) ≡ evext[ρ(r, t =
−∞)] + clr∈LB + crr∈RB. Two constants, cl and cr,
shift the Hamiltonian and chemical potentials in LB and
RB, respectively. Only knowing the electron density, cl
and cr are not determined, then the Hamiltonian of the
whole system and also the bias voltage Vb cannot be
determined, resulting in a fact that the initial Hamil-
tonian and in turn the initial state in general can not
be uniquely determined by the electron density alone.
With given evext[ρ(r, t = −∞)], cl and cr simply shift µl
and µr respectively. Without losing generality, the exter-
nal potential can also be written as vext(r, t = −∞) ≡
2
the definition of the bias voltage Vb, we have vext(r, t =
eevext[ρ(r, t = −∞)] + µlr∈LB + µrr∈RB. According to
−∞) ≡ eevext[ρ(r, t = −∞)] + eVbr∈LB + µrr∈(LB+RB).
We see immediately that the initial external potential
and in turn the initial state is determined by the ini-
tial electron density together with the bias voltage Vb
up to a trivial additive constant for the whole system
µr. Consequently, the initial-state dependence at t = 0
in RG theorem can be replaced by the voltage depen-
dence, leading to an important theorem that forms the
basis of the ab initio transport theory: When the system
reaches the steady state (t = 0), its external potential,
Vext(r, t = 0), is uniquely determined by the steady-state
electron density together with the bias voltage Vb up to
a trivial additive constant. As a direct consequence, the
energy of the steady state can be written as a voltage-
dependent density functional E[ρ(r), Vb]. When Vb = 0,
the functional goes to the commonly used DFT one.
Next, we show that the external parameter Vb can be
determined by intrinsic properties of the system. For
this purpose, as shown in Eq. 1, we divide the total
electron density of the steady state ρt into two parts and
name these two parts the equilibrium density ρe and non-
equilibrium density ρn, respectively.
ρt(r) = −iZ µl
ρe(r) = −iZ µr
ρn(r) = −iZ µl
µr
−∞
−∞
G<(r, ǫ)dǫ = ρe + ρn
G<(r, ǫ)dǫ
G<(r, ǫ)dǫ
(1)
Here we assume µr < µl. All physical quantities in
Eq. 1 are defined for the steady state at t = 0. The
term G< is the non-equilibrium lesser Green's function
that includes effects of both non-equilibrium distribution
and many-body interactions.2,3,10,11 The non-equilibrium
density ρn as defined has a physical meaning of the den-
sity of current-carrying electrons. Note that according
to the definition, ρn can also be computed in reservoirs
although reservoirs are assumed to be in equilibrium.
With the assumption of the mean-field reservoirs and
also the lesser Green's function in non-interacting sys-
tems2,3,22, it is straitforward to show that given ρe and
ρn, the total electron density ρt and the voltage bias Vb
are determined. Considering the fact that ρe and ρn can
also be determined by ρt and Vb, we therefore proved
the one-to-one correspondence between these two sets of
variables. Now we have one of the major results of the
paper, the foundation of the proposed ab initio approach:
For molecular junctions under a finite bias, the steady-
state properties of the system are uniquely determined
by the equilibrium and non-equilibrium electron densi-
ties, ρe and ρn, as defined in Eq. 1. The aforementioned
voltage dependent energy functional can then be written
as E[ρe, ρn].
We now try to generalize the existing DFT-based
ab initio transport theory2,3 to include bias-induced
nonequilibrium effects. For this purpose, we assume a
stationary principle for the non-equilibrium steady state:
The variation of the the steady-state energy functional
is zero, δEδρe ,δρn = 0. By taking the variations of the
energy functional with respect to ρe and ρn in the scatter-
ing region, we obtained two effective mean field equations
(Eq. 2),
(cid:18)−
(cid:18)−
1
2
1
2
∂exc
∂ρe (cid:19) φe
∂ρn(cid:19) φn
∂exc
∇2 + vext + VH +
j = λe
j φe
j ,
∇2 + vext + VH +
j = λn
j φn
j ,
(2)
where φe and φn are single-electron orbitals that con-
tribute to ρe and ρn respectively.
In the derivation of
above equations, the generalized local density approxi-
mation, Exc = R exc[ρe, ρn](r)dr, is used where exc is
the exchange-correlation energy density of the uniform
electron gas. The Hartree potential VH in the scattering
region can be obtained by solving the Poisson equation
with correct boundary conditions.10,11 Two coefficients,
λe and λn, are energies of corresponding orbitals. These
two equations have to be solved self-consistently together
with the correct open-system boundary conditions, and
NEGF techniques are powerful in matching the required
boundary conditions. Defining two mean-field exchange-
correlation potentials as V e
, Eq.
2 suggests that the non-equilibrium electrons or current-
carrying electrons experience a different mean-field ef-
fective potential from the equilibrium electrons do. We
therefore name the proposed method the dual-mean-field
(DMF) approach. The DMF equations (Eq. 2) are key
results of the paper, which provide the theoretical basis
for the investigation of electronic properties of molecular
junctions under a finite bias.
xc = ∂exc
∂ρn
xc = ∂exc
∂ρe
and V n
In general, the exchange-correlation energy density exc
can be written as the summation of the exchange part
and the correlation part, exc = ex + ec. The DMF ex-
change energy density can be worked out by general-
izing the Thomas-Fermi-Dirac (TFD) model23 to non-
equilibrium cases by applying an external bias voltage to
the uniform electron gas. By placing the uniform elec-
tron gas between two non-interacting reservoirs with dif-
ferent chemical potentials, the exchange energy density
(Eq. 3) can be analytically derived (The derivation can
be found in supporting information), and then two DMF
x = ∂ex
exchange potentials defined as V e
∂ρn
can be computed,
x = ∂ex
∂ρe
and V n
ex(ρt, η) =
1
4
(1 + η)
4/3(cid:20) −(cid:0)1 − η2(cid:1)2
+η4ln (η) + η4 + η3 −
η2 + η +
(ρt),
(3)
ln (1 + η)
3
2(cid:21)eT F D
x
1
2
where η(r) = ρn(r)/ρt(r) which is called the non-
3
TranSIESTA
DMF
18
16
14
12
10
)
A
μ
(
t
n
e
r
r
u
C
8
6
4
2
0
0
0.1
0.2
0.3
Voltage (Volts)
0.4
0.5
FIG. 2:
I-V curves for a GNR junction calculated from
both DMF approach and the commonly used ab initio
transport theory via the software TranSIESTA. Inset: The
atomic structure of the GNR junction and the iso-surface
of the difference between the exchange energy potentials of
current-carrying electrons calculated from DMF approach and
TranSIESTA,δV = V n
. The exchange poten-
tials were calculated under 0.2 V. The iso-surface value is 15
meV .
x − V T ranSIEST A
x
1+η(cid:17)1/3
equilibrium index in this paper, and η = (cid:16) 1−η
. Ac-
cording to the definition, η takes the value between 0
and 1, which measures the extent of the nonequilibrium.
When η = 0, the exchange density reduces to the equilib-
rium TFD one eT F D
. The DMF
correlation energy density is however challenging. In this
paper, we set the correlation functional to be the same
as the DFT one, which may not be a bad approximation
for weakly correlated systems under low biases.
4π3 (cid:0)3π2ρt(cid:1)4/3
(ρt) = − 1
x
We now are ready to apply the DMF approach to real
molecular scale junctions. As a case study, we choose
a junction made of two zigzag graphene nanoribbons
(Z-GNRs) with different widths as shown in the inset
of Fig. 2. The GNRs have been regarded as one of
the most promising building blocks for graphene-based
electronic devices.24 Since the long-range magnetic order
may not be stable under a finite temperature for such a
one-dimensional system, we follow previous studies to set
the total spin of the system zero.25,26 For Z-GNR based
junctions under low biases, It has been well known that
the current flows through edge states. We have imple-
mented the DMF approach into the SIESTA computa-
tional package.27 For comparison, we performed calcu-
lations with both the DMF approach and the commonly
used DFT based transport method via the function Tran-
SIESTA built in SIESTA11 (More computational details
can be found in supporting information).
In Fig. 2, I-V curves from DMF and TranSIESTA
calculations for the GNR junction are presented. When
bias is small (< 0.1 V), the DMF approach essentially
0.1
η=0
FIG. 3: Non-equilibrium index η(r) in the scattering region
of the GNR junction. The color map was plotted in the plane
2.2 A above the GNR. The system goes from local equilibrium
to non-equilibrium when the color changes from red to blue.
reproduces the TranSIESTA results. Starting from 0.1
V, significant deviations between two approaches occur,
and the current from DMF calculation is always lower
than that calculated from TranSIESTA. To understand
this, we plot in the inset of Fig. 2 the iso-surface of the
difference between the DMF non-equilibrium exchange
potential (V n
x ) and the DFT exchange potential calcu-
lated from TranSIESTA. The potentials were calculated
for the bias voltage 0.2 V. We see that the exchange po-
tential increases significantly at edges which are places
the electric current flows through. For other parts of the
system, the non-equilibrium correction to the potential is
not that important. The increase of the exchange poten-
tial leads to a higher scattering barrier in the scattering
region, and in turn, decreases the current as we see in
Fig. 2.
The non-equilibrium index in the DMF approach,
η(r), provides detailed spacial information for the non-
equilibrium steady state of the system. To demonstrate
this, in Fig. 3, we plot the color contour map of η(r) in
4
the scattering region of the GNR junction under 0.2 V.
From the figure, we can see that in the scattering region,
the extent of the non-equilibrium at different places are
quite different: Edges are far away from equilibrium while
electrons in the center of ribbons are still approximately
in local equilibrium.
In conclusion, we propose a DMF approach to de-
scribe electronic and transport properties of molecular-
scale junctions under a finite bias. We show that two elec-
tron densities, ρe and ρn, are needed to uniquely deter-
mine the properties of the steady state of non-equilibrium
molecular junctions. Subsequently, two mean fields, one
for current-carrying electrons and the other one for equi-
librium electrons, can be derived. The transport prop-
erties can then be calculated from the mean-field poten-
tial that the current-carrying electrons experience. The
case study for a GNR junction shows that the DMF ap-
proach could lead to significantly lower electric current
than the commonly used transport theory. For molec-
ular junctions that have localized molecular orbitals in
the scattering region, the non-equilibrium corrections to
the mean-field potential in the DMF approach will cause
significant variations of these localized orbitals and lead
to more profound changes in transport properties, which
will be discussed in our future studies.
We acknowledge the support from Ministry of Educa-
tion (Singapore) and NUS academic research grants (R-
144-000-325-112 and R144-000-298-112). Computations
were performed at the Graphene Research Centre and
Centre for Computational Science and Engineering at
NUS. See Supplementary Material Document No.xxxxx
for the generalized TFD model and computational de-
tails. For information on Supplementary Material, see
http://www.aip.org/pubservs/epaps.html. The compu-
tational codes for all calculations are available online or
from the author.
1 A. Aviram, and M. A. Ratner, Chem. Phys. Lett. 29, 277
11 M. Brandbyge, J. Mozos, P. Ordejon, J. Taylor, and K.
(1974)
Stokbro, Phys. Rev. B 65, 165401 (2002)
2 J. Taylor, H. Guo, and J. Wang, Phys. Rev. B 63, R121104
12 S. Y. Quek, L. Venkataraman, H. J. Choi, S. Louie, M. S.
(2001)
Hybertsen, and J. B. Neaton, Nano Lett. 7, 3477 (2007)
3 Y. Xue, S. Datta, and M. A. Ratner, Chem. Phys. 281,
13 S. H. Ke, H. U. Baranger, and W. Yang, J. Chem. Phys.
151 (2002)
126, 201102 (2007)
4 S. M. Lindsay, and M. A. Ratner, Adv. Mater. 19, 23
14 C. Toher, A. Filippetti, S. Sanvito, and K. Burke, Phys.
(2007)
Rev. Lett. 95, 146402 (2005)
5 J. Tomfohr, and O. F. Sankey, J. Chem. Phys. 120, 1542
15 P. Delaney, and J. C. Greer, Phys. Rev. Lett. 93, 036805
(2004)
(2004)
6 C. Zhang, M. H. Du, H. Cheng, X. Zhang, A. Roitberg,
16 M. Koentopp, K. Burke, and F. Evers, Phys. Rev. B 73,
and J. L. Krause, Phys. Rev. Lett. 92, 158301 (2004)
121403 (2006)
7 K. Stokbro, J. Taylor, and M. Brandbyge, J. Am. Chem.
17 K. S. Thygesen, and A. Rubio, Phys. Rev. B 77, 115333
Soc. 125, 3674 (2003)
8 S. Barraza-Lopez, M. Kindermann, and M. Y. Chou, Nano
Lett. 12, 3424 (2012)
(2008)
18 K. S. Thygesen, Phys. Rev. Lett. 100, 166804 (2008)
19 J. B. Neaton, M. S. Hybertsen, and S. G. Louie, Phys.
9 L. Shen, M. G. Zeng, S. W. Yang, C. Zhang, X. F. Wang,
Rev. Lett. 97, 216405 (2006)
and Y. P. Feng, J. Am. Chem. Soc. 132, 11481 (2010)
10 J. Taylor, H. Guo, and J. Wang, Phys. Rev. B 63, 245407
(2001)
20 E. Runge, and E. K. U. Gross, Phys. Rev. Lett. 52, 997
(1984)
21 P. Hohenberg, and W. Kohn, Phys. Rev. B 136, B864
(1964)
22 C. Zhang, X. Zhang, P. S. Krsti´c, H. P. Cheng, W. H. But-
ler, and J. M. Maclaren, Phys. Rev. B 69, 134406 (2004)
23 N. H. March, Adv. in Phys. 6, 1 (1957)
24 A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S.
Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109
(2009)
25 Q. Yan, B. Huang, J. Yu, F. Zheng, J. Zang, J. Wu, B.
5
Gu, F. Liu, and W. Duan, Nano Lett. 7, 1469 (2007)
26 Z. Li, H. Qian, J. Wu, B. Gu, and W. Duan, Phys. Rev.
Lett. 100, 206802 (2008)
27 J. Solar, E. Artacho, J. Gale, A. Garc´ıa, J. Junquera, P.
Ordej´on, and D. S´anchez-Portal, J. Phys.: Condens. Mat-
ter 14, 2745 (2002)
|
1907.00601 | 2 | 1907 | 2019-07-02T20:56:51 | Electrically driven spin torque and dynamical Dzyaloshinskii-Moriya interaction in magnetic bilayer systems | [
"cond-mat.mes-hall"
] | Efficient control of magnetism with electric means is a central issue of current spintronics research, which opens an opportunity to design integrated spintronic devices. However, recent well-studied methods are mostly based on electric-current injection, and they are inevitably accompanied by considerable energy losses through Joule heating. Here we theoretically propose a way to exert spin torques into magnetic bilayer systems by application of electric voltages through taking advantage of the Rashba spin-orbit interaction. The torques resemble the well-known electric-current-induced torques, providing similar controllability of magnetism but without Joule-heating energy losses. The torques also turn out to work as an interfacial Dzyaloshinskii-Moriya interaction which enables us to activate and create noncollinear magnetism like skyrmions by electric-voltage application. Our proposal offers an efficient technique to manipulate magnetizations in spintronics devices without Joule-heating energy losses. | cond-mat.mes-hall | cond-mat | Electrically driven spin torque and dynamical
Dzyaloshinskii-Moriya interaction in magnetic bilayer systems
Akihito Takeuchi,1 Shigeyasu Mizushima,1 and Masahito Mochizuki2, 3
1Department of Physics and Mathematics,
Aoyama Gakuin University, Sagamihara, Kanagawa 229-8558, Japan
2Department of Applied Physics, Waseda University,
Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
3PRESTO, Japan Science and Technology Agency,
Kawaguchi, Saitama 332-0012, Japan
Abstract
Efficient control of magnetism with electric means is a central issue of current spintronics re-
search, which opens an opportunity to design integrated spintronic devices. However, recent well-
studied methods are mostly based on electric-current injection, and they are inevitably accompa-
nied by considerable energy losses through Joule heating. Here we theoretically propose a way to
exert spin torques into magnetic bilayer systems by application of electric voltages through taking
advantage of the Rashba spin-orbit interaction. The torques resemble the well-known electric-
current-induced torques, providing similar controllability of magnetism but without Joule-heating
energy losses. The torques also turn out to work as an interfacial Dzyaloshinskii-Moriya interaction
which enables us to activate and create noncollinear magnetism like skyrmions by electric-voltage
application. Our proposal offers an efficient technique to manipulate magnetizations in spintronics
devices without Joule-heating energy losses.
PACS numbers:
9
1
0
2
l
u
J
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
1
0
6
0
0
.
7
0
9
1
:
v
i
X
r
a
1
Introduction
Recent research in spintronics [1 -- 8] is seeking efficient ways to control magnetism in
materials and realize high-performance magnetic devices beyond conventional techniques
based on classical electromagnetism. To manipulate the magnetization in magnets, we need
to exert torques to drive them. Spin-transfer torque is one such torque and, mediated by the
exchange interaction, originates with the angular momentum transfer from the spins of the
conducting electrons to magnetizations in the magnetic structure [9 -- 11]. Another is the so-
called β-term torque originating from the spin relaxation due to the spin-orbit interactions
and/or magnetic impurity scatterings, which is perpendicular to the spin transfer torque and
thus behaves as a dissipative torque [11 -- 13]. These two torques enable the magnetization
to be driven and switched via the injection of electric currents [14 -- 17].
The Rashba-type spin-orbit interaction (RSOI) has recently attracted interest as a means
to manipulate conduction-electron spins [5, 18]. This interaction is of relativistic origin and
becomes active in systems with broken spatial inversion symmetry such as surfaces and
interfaces [5, 18 -- 21]. Because the RSOI mediates mutual coupling between spins and orbital
momenta of the conduction electrons, it works as an effective magnetic field acting on their
spins. The strength and direction of the effective magnetic field that each electron feels
are governed by the momentum of the electron. Therefore, the RSOI can be a source of
nontrivial torques acting on the magnetization through its control on the spin polarizations
of the conduction electrons [22 -- 27]. The strength of the RSOI can be tuned by applying
a gate voltage normal to the surface or interfacial plane [19], which modulates the extent
of the spatial inversion asymmetry. Thus, an alternate-current (AC) gate voltage produces
a time-varying RSOI, and thereby offers a potential technique to produce electrically an
oscillating magnetic texture via the nontrivial Rashba-mediated torques. This technique
must be useful for manipulation of magnetic skyrmions in a magnetic bilayer system, which
have recently attracted great interest from the viewpoint of possible application to high-
performance memory devices [28, 29].
Recent theoretical studies demonstrated that this time-varying RSOI induces an AC spin
current [30 -- 32]. Ho et al. derived an expression for the torque T from the AC spin cur-
rent [33], finding that this expression does not contain a term corresponding to the β-term
torque. It is known that the spin-transfer torque alone cannot drive magnetic domain walls,
2
but other types of torques such as the β-term torque and the spin-orbit torque [34 -- 36]
are required to drive them. However, their theory was based on a continuity equation for
the conduction electron spins where the contribution of spin relaxation torque is totally ne-
glected. The lack of a β-term torque may be a consequence of this crude approximation [37].
Therefore, we reexamine whether the β-term torque in the time-dependent Rashba electron
systems is present using a more elaborate theoretical method.
In this paper, we derive using the quantum field theory an explicit analytical formula for
the torque arising from the AC RSOI in the magnetic bilayer systems. We demonstrate that
the appropriate incorporation of the spin relaxation effect leads to a formula including both
the spin-transfer torque and the β-term torque given in terms of the spin current proportional
to the time derivative of the RSOI. We find that the derived expression may be regarded
as a time-dependent Dzyaloshinskii-Moriya interaction (DMI) at the interface and may be
exploited to manipulate noncollinear magnetic textures such as domain walls, magnetic
vortices, and skyrmions. For a demonstration, we performed a numerical simulation of
the electrical activation of a two-dimensional skyrmion lattice, where the effective AC DMI
induces a periodic expansion and contraction of the skyrmions. This collective excitation
of the skyrmions resembles the breathing mode [38, 39] observed in a skyrmion crystal
under out-of-plane microwave magnetic fields. Efficient techniques to control and drive
magnetism using electric fields are subject of intensive studies in the recent spintronics
research because electric fields in insulators are not accompanied by Joule-heating losses.
Note that electric currents and resulting Joule-heating losses can be significantly suppressed
by using a ferromagnet/insulator bilayers or a metallic bilayer fabricated on an insulating
substrate. Our finding provides a new efficient technique to control magnetism using AC
electric fields and means to electrically excite eigenmodes of noncollinear spin textures.
Results
Model
We consider a magnetic bilayer system, that is, a two-dimensional electron system on top
of the surface of a magnet (see Fig. 1). This system is fabricated on an insulating substrate
to enhance the effects of the electric gate voltage acting on the ferromagnet/heavy-metal
3
interface through preventing the electric-current flow. The total Hamiltonian of this electron
system has four contributing terms, H = HK + HR + Hex + Himp with
HK =
1
2me Z d2r(cid:12)(cid:12)pψ(r, t)(cid:12)(cid:12)
αR(t)
2
− εFZ d2r ψ†(r, t)ψ(r, t),
HR = −
Z d2r ψ†(r, t)(p × σ)zψ(r, t),
Hex = JexZ d2r m(r) · ψ†(r, t) σψ(r, t),
Himp = Z d2r vimp(r)ψ†(r, t)ψ(r, t),
(1)
(2)
(3)
(4)
where me and p denote the mass and momentum, respectively, of a conduction electron,
εF the Fermi energy, σ the Pauli matrices, and ψ† (ψ) the creation (annihilation) operator
of a conduction electron. The term HK represents the kinetic energies of the conduction
electrons with εF being the Fermi energy, while the term HR describes the time-varying
RSOI with αR(t) being the time-dependent coupling coefficient. The term Hex represents
the exchange interaction between the conduction-electron spins and the local magnetization
with Jex and m being the coupling constant and the normalized local magnetization vector,
respectively. The term Himp represents the scattering potentials from spatially distributed
nonmagnetic impurities and determines the relaxation time of electrons given by τ . More
conretely, we consider the impurity potential given by vimp(r) = uimpPi δ(r − Ri), where
uimp denotes the strength of impurity scattering, Ri positions of the impurities, and δ(r) the
Dirac delta function. When we take an average over the impurity positions as vimp(r) = 0
and vimp(r)vimp(r′) = nimpu2
impδ(r − r′), the relaxation time of electrons is given by τ =
/2πνenimpu2
imp in the first Born approximation. Here, nimp denotes the concentration of
impurities and νe = me/2π2 the density of state. In the present study, we focus on the spin
torques induced by the time-varying RSOI but neglect those induced by the magnetization
dynamics. Note that there should be a feedback effect that the spin states of the conduction
electrons are modulated by the magnetization dynamics, but we neglect this subsequent
effect on the spin torques.
Spin torque arising from time-dependent RSOI
The torque induced by the electron spins via the exchange interaction is defined as
m × s,
T =
Jexa2
4
(5)
(cid:85)(cid:74)(cid:78)(cid:70)(cid:14)(cid:69)(cid:70)(cid:81)(cid:15)(cid:1)(cid:51)(cid:66)(cid:84)(cid:73)(cid:67)(cid:66)(cid:1)(cid:87)(cid:70)(cid:68)(cid:85)(cid:80)(cid:83)
DR(t)
(cid:79)(cid:80)(cid:79)(cid:68)(cid:80)(cid:77)(cid:77)(cid:74)(cid:79)(cid:70)(cid:66)(cid:83)(cid:1)
(cid:78)(cid:66)(cid:72)(cid:79)(cid:70)(cid:85)(cid:74)(cid:91)(cid:66)(cid:85)(cid:74)(cid:80)(cid:79)(cid:84)
m(r)
(cid:71) (cid:70) (cid:83) (cid:83) (cid:80)(cid:78) (cid:66) (cid:72) (cid:79) (cid:70) (cid:85)
(cid:77) (cid:66) (cid:90) (cid:70) (cid:83)
(cid:1)
(cid:73) (cid:70) (cid:66) (cid:87) (cid:90) (cid:14)(cid:78) (cid:70) (cid:85) (cid:66) (cid:77)
(cid:74) (cid:79) (cid:84) (cid:86) (cid:77) (cid:66) (cid:85) (cid:74) (cid:79) (cid:72) (cid:1) (cid:84) (cid:86) (cid:67) (cid:84) (cid:85) (cid:83) (cid:66) (cid:85) (cid:70)
AC
(cid:34)(cid:36)(cid:1)(cid:72)(cid:66)(cid:85)(cid:70)(cid:1)
(cid:87)(cid:80)(cid:77)(cid:85)(cid:66)(cid:72)(cid:70)
FIG. 1: Schematic illustration of the time-dependent Rashba electron system interacting with local
magnetizations m(r). The Rashba parameter αR(t) is time-modulated by an external AC electric
voltage. The insulating substrate prevents electric-current flows and enhances the effects of the
electric voltage acting on the RSOI-hosting interface.
where a is the lattice constant, s = hψ† σψi is the conduction electron spin density, and
the brackets denote the quantum expectation value. We assume a metallic bilayer system
in which the condition Jex < εF usually holds and an adiabatic case with a slowly varying
magnetization texture of q ≪ kF where q is the wavenumber of local magnetization and kF
is the Fermi wavenumber. We also assume that a weak magnitude of αR (αRkF ≪ εF) and
low frequencies Ω (Ω ≪ εF) for the time-dependent RSOI. In this perturbation regime, we
obtain the analytical formula of the torque in the form
T = T 1+T 2+T 3 = −
a
D1(m×∇)zm+
a
D2(m×∇)zm−
a
βRD2m×h(m×∇)zmi, (6)
where each coefficient is defined in the condition with εF ≫ /τ , Jex ≫ /τ and εF − Jex ≫
/τ as (η = /2τ )
D1(t) =
νea
2πτ (cid:20) εF
εF − Jex(cid:19) − 2(cid:21)αR(t),
ln(cid:18) εF + Jex
Jex
ex − η2)
J 2
ex(J 2
ex + η2)2
(J 2
dαR(t)
dt
,
D2(t) = νeaεFτ
βR =
2Jexη
ex − η2 .
J 2
(7)
(8)
(9)
We note that D1 vanishes in the clean limit with τ → ∞. Note that D1 does not vanish in
the three-dimensional case or in the half-metallic case with Jex > εF [40] even in the clean
limit.
5
In Eq. (6), the first two contributions, T 1 + T 2, describe an effective DMI [41, 42], which
is given in the continuum form as
HDMI =
D1 − D2
a
ǫαβz Z d2r (m × ∇αm)β.
(10)
(Note that m × (a2/)δHDMI/δm leads to T 1 + T 2). The contribution D1 (∝ αR) appears
even in the steady Rashba system [40, 43, 44]. Recent experiments indeed demonstrated
voltage-induced variations of the interfacial DMI [45, 46], which were ascribed to this steady
Rashba contribution. Quite recently, an experimental observation of gigantic variation of the
DMI that reaches 130 % has been reported for the Ta/FeCoB/TaOx multilayer system [46].
In contrast, the contribution D2 (∝ ∂tαR) appears only in a driven Rashba system with a
time-dependent RSOI.
This interfacial DMI may be tuned by an electric gate voltage via the RSOI, and, more
interestingly, an oscillating DMI may be achieved by applying an AC gate voltage. The
Rashba coefficient αR(t) in the driven Rashba system is a sum of steady and time-dependent
components, αR(t) = α0 + αext(t) with αext(t) = αext sin (Ωt). For metallic (semiconducting)
bilayer systems, the strength of this Rashba-induced DMI is roughly estimated to be D1 ∼
0.1 meV (6 × 10−6 meV) and D2 ∼ 5 × 10−3 meV (2 × 10−6 meV). Here we assume typical
parameter values [19 -- 21], i.e., a = 5 A, εF = 4 eV (10 meV), kF = 1 A−1 (0.01 A−1),
Jex/εF = 0.25 (0.5), τ = 10−14 s (10−12 s), α0 = 2 eV·A (0.07 eV·A), αext/α0 = 0.1, and
Ω/2π = 1 GHz. The strength of the Rashba-mediated DMI is relatively strong (weak) in
metal (semiconductor) systems. We also note that the magnitude of D2 being proportional to
∂tαext(t) may be tuned by changing the amplitude and frequency of the AC gate voltage. The
relative strength of D2 or the ratio D2/D1 tends to be small. Note that the ratio D2/D1 is
approximately given by ΩεFτ 2/2π, which takes ∼ 10−4 (10−2) for metallic (semiconducting)
bilayer systems when a typical frequency of Ω=1 GHz is assumed. Namely, the ratio D2/D1
tends to be larger for the semiconducting system, whereas the absolute value of D2 tends
to be larger for the metallic system. We should choose an appropriate system depending on
the target phenomena or the experiments.
In Eq. (6), the last two terms proportional to D2 may be rewritten as
T 2 + T 3 ∝ (js · ∇)m − βRm × (js · ∇)m.
(11)
by adopting a definition of the spin current js ≡ (e/a)D2 z × m. We find that these terms
6
have equivalent forms with the spin-transfer torque and the nonadiabatic torque associ-
ated with the spin current js, respectively. With an AC-dependent αR(t), the spin current
js ∝ ∂tαR(t) z × m gives rise to AC torques.
In the clean limit with /Jexτ ≪ 1, the
coefficient βR is reduced to /Jexτ . Finally, the second term is exactly identical in form to
the conventional current-induced nonadiabatic torque although τ corresponds to a differ-
ent time scales, specifically, the relaxation time of the conduction electrons (spins) in the
present (current-induced) case [11]. Assuming the above-mentioned material parameters for
the metallic bilayer systems, we evaluate the values of js = (e/a)D2 and βR as ∼ 2 A/m and
∼ 0.07, respectively. These values are large enough to induce the magnetization dynamics.
Application of oscillating DMI
The AC torques in the driven Rashba system may be exploited to activate resonances of
the magnetic textures. For a demonstration, we numerically show that the breathing mode
of a skyrmion crystal can be excited by the RSOI-mediated AC torques. We start with the
continuum limit of the spin model for a two-dimensional magnet,
H = Z d2r
J
2
(∇m)2 −
µBµ0
a2 Z d2r m · H.
(12)
The model contains the ferromagnetic exchange interaction and the Zeeman interaction with
an external magnetic field H = H z. We adopt typical material parameters of a = 5 A,
J = 1 meV and µ0H = 34 mT. The dynamics of magnetizations obeys the Landau-Lifshitz-
Gilbert equation
m = −γmm ×(cid:18)−
a2
γm
δH
δm(cid:19) + αGm × m + T 1,
(13)
where γm is the gyromagnetic ratio, and αG (= 0.04) is the Gilbert-damping coefficient. We
incorporate T 1 as the Rashba-mediated torque whereas T 2 and T 3 are neglected because
they are much smaller than T 1 in the metallic bilayer systems.
that T 1 (T 2 and T 3) originates from D1 (D2), and the ratio D2/D1 is 10−12-10−14 as men-
(Equation (6) indicates
tioned above.) The coupling coefficient D1(t) is composed of a steady component D0 and
the time-dependent component Dext(t) as D1(t) = D0 + Dext(t). We solve this equation
numerically using the fourth-order Runge-Kutta method for a system of 140 × 162 nm2,
including N = 280 × 324 magnetizations, applying a periodic boundary condition. Without
the AC electric voltage, the Rashba-mediated torque has a steady component only with
7
D1 = D0(= 0.09 meV). In this situation, the torque stabilizes the skyrmion crystal with
hexagonally packed N´eel-type skyrmions (Fig. 2(a)) at low temperatures by effectively work-
ing as a static DMI, as exemplified by Eq. (10).
Next, we simulated the dynamics of this skyrmion crystal in the presence of AC gate volt-
ages by switching on the Rashba-mediated AC torque with Dext(t) 6= 0. The time evolution
of the numerical simulation is performed for every 0.01 ps. We first calculate the dynami-
cal magnetoelectric susceptibility χ(Ω) to identify the resonance frequency of this skyrmion
crystal. We trace a time profile of the net magnetization M (t) = (1/Na2)R d2r m(r, t)
and ∆M (t) = M (t) − M (0) after applying a short electric-field pulse by switching on the
time-dependent component of the torque Dext(t) = 0.05D0 for an interval of 0 ≤ t ≤ 1. We
obtain its spectrum (Fig. 2(b)) by calculating the Fourier transform of ∆M (t). From this
spectrum, we find that the skyrmion crystal has a resonance at Ω/2π = 1.72 GHz. Note
that the resonance frequency (the time period) of the skyrmion eigenmode is determined by
the spin-wave gap which is proportional to D2
0 (D−2
0 ).
We then apply a microwave electric field to this skyrmion-hosting magnetic bilayer sys-
tem by switching on the AC component of the torque Dext(t) = 0.05D0 sin (Ωt). We ex-
amined both resonance with Ω/2π = 1.72 GHz and off-resonance with Ω/2π = 1 GHz.
For the former, we observe a breathing-type mode where all the skyrmions constituting the
skyrmion crystal uniformly contracted and expanded periodically (Fig. 2(c)). For the latter,
the induced breathing oscillation of the skyrmions is small. We find that the periodically
modulated skyrmion diameter is nearly proportional to the time-dependent DMI coefficient.
The present simulation demonstrated the electrical activation of a skyrmion resonance. The
induced dynamical DMI is also expected to realize the electrical creation of skyrmions [48 --
53]. The electrical writing of skyrmions with the RSOI-mediated DMI in the field polarized
ferromagnetic state and even the helical state should be established in the future study.
Discussion
In summary, we have theoretically derived a precise formula of the spin torque in a
time-varying Rashba electron system driven by the AC gate voltage. The obtained formula
contains not only the spin-transfer torque but also the β-term torque associated with the AC
spin current that is proportional to the time derivative of the RSOI. These AC torques can
8
FIG. 2: Eigenmodes of N´eel-type skyrmion crystal activated by an AC DMI. (a) Skyrmion crys-
tal with hexagonally packed N´eel-type skyrmions. In-plane and out-of-plane components of the
magnetizations are shown by arrows and color map, respectively. (b) Imaginary part of the dy-
namical magnetoelectric susceptibility. (c) Snapshots of the electrically activated breathing motion
at t = 0, π/2Ω, π/Ω and 3π/2Ω for the resonant condition with Ω/2π = 1.72 GHz, and (d) those
for an off-resonant condition with Ω/2π = 1 GHz.
excite resonance of magnetic textures through acting as an interfacial AC DMI. Indeed, we
have numerically demonstrated that the effective AC DMI can activate the breathing mode
of magnetic skyrmions. We have confirmed that not only the crystallized magnetic skyrmions
(skyrmion crystal) but also isolated skyrmions in ferromagnets can be excited resonantly by
application of a microwave field, which offers a better experimental feasibility because a
lot of ferromagnet/heavy-metal bilayer systems turned out to host magnetic skyrmions as
topological defects [28, 54 -- 56]. Recent theoretical studies revealed that activation of the
skyrmion breathing mode under application of a magnetic field inclined from the vertical
direction induces translational motion of the skyrmions [57 -- 59], which provides a means to
9
drive magnetic skyrmions electrically with a low energy consumption. Our finding provides
a promising technique to manipulate noncollinear magnetic textures with a great efficiency
that have potential applications in memory, logic, and microwave devices.
There are several types of devices to realize the proposed effects. The devices must
have two important features, i.e., (1) an interface that hosts the SOI due to the broken
inversion symmetry and (2) insulating nature to prevent the electric-current flow. One
possible type of device is a ferromagnet/insulator bilayer system [45, 46]. On the contrary,
we proposed another type of device with ferromagnet/heavy-metal bilayer fabricated on an
insulating substrate.
In the latter system, we expect much stronger SOI because of the
heavy-metal layer. In this case, the required insulating nature is taken up by the insulating
substrate. The issue which system is appropriate is left for future study. The RSOI is
originally very strong in the latter system, but its electric tunability may be low because
the applied electric field mainly acts on the heavy-metal/insulator layer but not on the
ferromagnet/heavy-metal interface. In addition, due to the short screening length in metal,
the electric field decays quickly and may hardly reach the interface that hosts the RSOI. On
the other hand, the ferromagnet/insulator bilayer system can originally have a weak RSOI
only, but its electric tunability can be large because the applied electric field directly acts
on the ferromagnet/insulator interface that hosts the RSOI.
It should be also mentioned that several types of bilayer systems with interfacial DMI have
been intensively studied recently, where driven spin torques and generations of skyrmion-type
noncollinear magnetic textures using the interfacial DMI have been experimentally demon-
strated not only for ferromagnet/heavy-metal systems but also for ferromagnet/transition-
metal-dichalcogenide systems [60] and ferromagnet/topological-insulator systems [61].
In
the latter two cases, the SOI is much more complicated than the simple Rashba model for
the ferromagnet/heavy-metal system considered in the present study [62], and it is unclear
which of many terms emerged at the interfaces of these systems can be modulated by AC
gate voltage in reality [63]. These problems require further investigations, which are left for
future researches. In experiments, we need to take care of magnetic anisotropies in the fer-
romagnetic layer because the stability and the resonance modes of skyrmions are sensitively
affected by them [64]. Our results will provide a firm basis and a good starting point for
future experimental and theoretical studies.
10
Methods
Diagonalization of exchange interaction
We need to calculate the electron spin density vector s to obtain the spin torque. However,
as the exchange coupling Jex is generally large compared with other energy scales such as
the kinetic energy and the RSOI, we cannot regard it as a perturbation. Instead, we need
to perform a diagonalization of the exchange interaction term [11, 33]. For this purpose, we
employ a 2 × 2 unitary matrix U ≡ n · σ with n = (sin (θ/2) cos φ, sin (θ/2) sin φ, cos (θ/2)).
Here, θ and φ are the polar and azimuthal angles of the local magnetization vector m =
(sin θ cos φ, sin θ sin φ, cos θ). As relation m· U † σ U = σz holds, the exchange interaction term
may be diagonalized using a new operator of the conduction electron Ψ expressed in the local
coordinates rotating along with the spatially modulated magnetization vectors. Hereafter,
this coordinate system is referred to as the rotated spin frame. The new operator Ψ is related
to the original operator ψ defined in the global coordinates via a unitary transformation as
ψ = U Ψ. Finally, the total Hamiltonian is rewritten with the Ψ operators as
H =
1
2me Z d2r(cid:12)(cid:12)(cid:2)p + eAα(r, t)σα(cid:3)Ψ(r, t)(cid:12)(cid:12)
+JexZ d2r Ψ†(r, t)σzΨ(r, t)
2 − εFZ d2r Ψ†(r, t)Ψ(r, t)
meα2
R(t)
2
−
Z d2r Ψ†(r, t)Ψ(r, t) +Z d2r vimp(r)Ψ†(r, t)Ψ(r, t),
where −e (< 0) is the electron charge. The non-Abelian gauge potential A appears as a
by-product of the diagonalization of the exchange interaction. This gauge potential contains
two contributions [33], denoted A = A(ex) + A(so). The first term A(ex) is a gauge potential
originating from the spatial variation of the magnetization structure whereas the second
term A(so) comes from the RSOI. Each gauge potential is defined as
A(ex)α
µ
σα ≡ −
A(so)α
µ
σα ≡ −
i
e
meαR
e
ǫµβz U † σβ U = −
meαR
e
ǫµβzRαβ σα,
U †∇µ U =
(n × ∇µn)ασα,
e
with Rαβ σα ≡ U † σβ U = (2nαnβ − δαβ)σα. Here Rαβ is an element of a 3 × 3 orthogonal
matrix. The symbols δαβ and ǫαβγ denote the Kronecker delta and the Levi-Civita antisym-
metric tensor, respectively. In the rotated spin frame, the Ψ-electron spin density is given by
11
Sα = hΨ†σαΨi. The spin density S in the rotated spin frame is related to the spin density s
in the original frame via R as sα = RαβSβ. Therefore, the spin torque T is rewritten using
S± = Sx ± iSy,
T α =
Jexa2
2
ǫαβγmβ Xσ=±
(Rγx − iσRγy)Sσ.
In the calculation, we consider the impurity potential given by
vimp(r) = uimpXi
δ(r − Ri),
where uimp denotes the strength of impurity scattering, Ri the positions of the impurities,
and δ(r) the Dirac delta function. When we take an average over the impurity positions as
vimp(r) = 0,
vimp(r)vimp(r′) = nimpu2
impδ(r − r′)
the relaxation time of electrons is given by τ = /2πνenimpu2
imp in the first Born approxi-
mation. Here, nimp denotes the concentration of impurities and νe = me/2π2 the density
of state.
Calculation of spin torque arising from AC RSOI
The Ψ-electron spin density S± is written in terms of the path-ordered Green function
S±(r, t) = −iTrhσ± G<(r, t; r, t)i,
where σ± = σx ± iσy and Tr signifies the trace over the spin indices. The lesser
component of the path-ordered Green function [47] is represented by G<(r, t; r′, t′) =
(i/)hΨ†(r′, t′)Ψ(r, t)i. In the present system, the Dyson equation is given as
G(r, t; r′, t′) = g(r − r′, t − t′) +ZC
where C denotes the Keldysh contour and V is defined as
dt′′ Z d2r′′ g(r − r′′, t − t′′) V (r′′, t′′) G(r′′, t′′; r′, t′),
V (r′′, t′′) = −
ie
2me(cid:20) ∂
∂r′′
µ
Aα
µ(r′′, t′′) + Aα
µ(r′′, t′′)
+
e2
2me
Aα
µ(r′′, t′′)Aα
µ(r′′, t′′)I −
12
∂
∂r′′
µ(cid:21)σα
R(t′′)I + vimp(r′′)I.
me
2 α2
Here g denotes the noninteracting Green function given in the Fourier space as gk,ω =
G<
is the identity matrix.
(1/2)Pσ=±(I + σσz)gk,ω,σ where I
bol < represents the relation [RC dt′′ G1(t, t′′) G2(t′′, t′)]< = R ∞
1 (t, t′′) Ga
2 (t′′, t′) +
2(t′′, t′)] [47]. The retarded, advanced, and lesser Green functions (gr, ga and
k,ω,σ) where fω is the Fermi distribu-
k,ω,σ)∗ =
1/(ω − εk + εFσ + iη) where εk = 2k2/2me and εFσ = εF − σJex. The spin density S±
tion function. The retarded (advanced) Green function is defined as gr
g<) are mutually related by g<
k,ω,σ = fω(ga
k,ω,σ − gr
−∞ dt′′ [ Gr
1(t, t′′) G<
The superscript sym-
k,ω,σ = (ga
can be obtained by iteration of this equation. The dominant contributions are given by
the first-order perturbation expansions in A(so) and up to first order in A(ex). After some
algebra, this equation is reduced to (see Supplementary Materials for details)
S± = −
2e
JexahD1 − (1 ∓ iβR)D2i(cid:16)m × A(ex)±(cid:17)z
,
where A(ex)± = A(ex)x ±iA(ex)y. Substituting this result into the definition of the spin torque
and using the relations Pσ=±(Rαx − iσRαy)A(ex)σ
µ
iσRαy)iσA(ex)σ
µ
= −(/e)(m × ∇µm)α and Pσ=±(Rαx −
= (/e)∇µmα, we thus have obtained the result given in Eqs. (6-9).
Note on the Numerical Simulations
Our numerical simulation with the LLG equation corresponds to the micromagnetic sim-
ulation based on the continuum spin model with the exchange stiffness A = 4.0 × 10−14
[Jm−1], the continuum DM parameter B = 1.44 × 10−5 [Jm−2], the magnetic field µ0Hz=34
mT, and the saturation magnetization Ms = 3.5 × 104 [Am−1] for a system size of 140 nm
× 162 nm × 2 nm. This simulation can be performed with commercial or free softwares
such as OOMMF and mumax. In the present study, the continuum spin model is mapped
to the lattice spin model by dividing the continuum space into identical rectangular cells.
More concretely, dividing the continuum space into identical rectangular cells of 0.5 nm×0.5
nm×2 nm, we obtain the lattice spin model with the normalized magnetization vectors mi
where the exchange coupling J=1 meV, the DM parameter D0/J=0.09, and the magnetic
field µBµ0Hz/J=0.004.
[1] Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281, 951 (1998).
13
[2] Wolf, S. A., Awschalom, D. D., Buhrman, R. A., Daughton, J. M., von Moln´ar, S., Roukes,
M. L., Chtchelkanova, A. Y. & Treger, D. M. Spintronics: a spin-based electronics vision for
the future. Science 294, 1488 (2001).
[3] Zuti´c, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod.
Phys. 76, 323 (2004).
[4] Chappert, C., Fert, A. & Van Dau, F. N. The emergence of spin electronics in data storage.
Nat. Mater. 6, 813 (2007).
[5] Manchon, A., Koo, H. C., Nitta, J., Frolov, S. M., & Duine, R. A. New perspectives for
Rashba spin-orbit coupling. Nat. Mat. 14, 871 (2015).
[6] Endoh, T., & Honjo, H. A recent progress of spintronics devices for integrated circuit appli-
cations. J. Low Power Electron. Appl. 8, 44 (2018).
[7] Jungwirth, T., Sinova, J., Manchon, A., Marti, X., Wunderlich, J., & Felser, C. The multiple
directions of antiferromagnetic spintronics. Nat. Phys. 14, 200 (2018).
[8] Baltz, V., Manchon, A., Tsoi, M., Moriyama, T., Ono, T., & Tserkovnyak, Y. Antiferromag-
netic spintronics. Rev. Mod. Phys. 90, 015005 (2018).
[9] Slonczewski, J. C. Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater.
159, L1 (1996).
[10] Berger, L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev.
B 54, 9353 (1996).
[11] Tatara, G., Kohno, H. & Shibata, J. Microscopic approach to current-driven domain wall
dynamics. Phys. Rep. 468, 213 (2008).
[12] Zhang, S. & Li, Z. Roles of nonequilibrium conduction electrons on the magnetization dynam-
ics of ferromagnets. Phys. Rev. Lett. 93, 127204 (2004)
[13] Thiaville, A., Nakatani, Y., Miltat, J. & Suzuki, Y. Micromagnetic understanding of current-
driven domain wall motion in patterned nanowires. Eyrophys. Lett. 69, 990 (2005).
[14] Klaui, M., Vaz, C. A. F., Bland, J. A. C., Wernsdofer, W., Faini, G., Cambril, E. & Hey-
derman, L. J. Domain wall motion induced by spin polarized currents in ferromagnetic ring
structures. Appl. Phys. Lett. 83, 105 (2003).
[15] Tsoi, M., Fontana, R. E. & Parkin, S. S. P. Magnetic domain wall motion triggered by an
electric current. Appl. Phys. Lett. 83, 2617 (2003).
[16] Yamaguchi, A., Ono, T., Nasu, S., Miyake, K., Mibu, K. & Shinjo, T. Real-space observation of
14
current-driven domain wall motion in submicron magnetic wires. Phys. Rev. Lett. 92, 077205
(2004).
[17] Yamanouchi, M., Chiba, D., Matsukura, F. & Ohno, H. Current-induced domain-wall switch-
ing in a ferromagnetic semiconductor structure. Nature 428, 539 (2004).
[18] Rashba, E. I. Properties of semiconductors with an extremum loop. 1. Cyclotron and combi-
national resonance in a magnetic field perpendicular to the plane of the loop. Sov. Phys. Solid
State 2, 1109 (1960).
[19] Nitta, J., Akazaki, T., Takayanagi, H. & Enoki, T. Gate control of spin-orbit interaction in
an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure. Phys. Rev. Lett. 78, 1335 (1997).
[20] Ast, C. R., Henk, J., Ernst, A., Moreschini, L., Falub, M. C., Pacil'e, D., Bruno, P. Kern, K.
& Grioni, M. Giant spin splitting through surface alloying. Phys. Rev. Lett. 98, 186807 (2007)
[21] Nakagawa, T., Ohgami, O., Saito, Y., Okuyama, H., Nishijima, M. & Aruga, T. Transition be-
tween tetramer and monomer phases driven by vacancy configuration entropy on Bi/Ag(001).
Phys. Rev. B 75, 155409 (2007).
[22] Obata, K. & Tatara, G. Current-induced domain wall motion in Rashba spin-orbit system.
Phys. Rev. B 77, 214429 (2008).
[23] Manchon, A. & Zhang, S. Theory of nonequilibrium intrinsic spin torque in a single nanomag-
net. Phys. Rev. B 78, 212405 (2008).
[24] Manchon, A. & Zhang, S. Theory of spin torque due to spin-orbit coupling. Phys. Rev. B 79,
094422 (2009).
[25] Kim, K.-W., Seo, S.-M., Ryu, J., Lee, K.-J. & Lee, H.-W. Magnetization dynamics induced
by in-plane currents in ultrathin magnetic nanostructures with Rashba spin-orbit coupling.
Phys. Rev. B 85, 180404(R) (2012).
[26] Miron, I. M., Gaudin, G., Auffret, S., Rodmacq, B., Schuhl, A., Pizzini, S., Vogel, J. &
Gambardella, P. Current-driven spin torque induced by the Rashba effect in a ferromagnetic
metal layer. Nat. Mater. 9, 230 (2010).
[27] Miron, I. M., Moore, T., Szambolics, H., Buda-Prejbeanu, L. D., Auffret, S., Rodmacq, B.,
Pizzini, A., Vogal, J., Bonfim, M., Schuhl, A. & Gaudin, G. Fast current-induced domain-wall
motion controlled by the Rashba effect. Nat. Mater. 10, 419 (2011).
[28] Fert, A., Cros, V. & Sampaio, J. Skyrmions on the track. Nat. Nanotech. 8, 152 (2013).
[29] Soumyanarayanan, A., Reyren, N., Fert, A. & Panagopoulos, C. Emergent phenomena induced
15
by spin-orbit coupling at surfaces and interfaces. Nature 539, 509 (2016).
[30] Mal'shukov, A. G., Tang, C. S., Chu, C. S. & Chao, K. A. Spin-current generation and
detection in the presence of an ac gate. Phys. Rev. B 68, 233307 (2003).
[31] Zhang, S.-f. & Zhu, W. The limit spin current in a time-dependent Rashba spin-orbit coupling
system. J. Phys.: Condens. Matter 25, 075302 (2013).
[32] Ho, C. S., Jalil, M. B. A. & Tan, S. G. Spin force and the generation of sustained spin current
in time-dependent Rashba and Dresselhaus systems. J. Appl. Phys. 115, 183705 (2014).
[33] Ho, C. S., Jalil, M. B. A. & Tan, S. G. Gate-control of spin-motive force and spin-torque in
Rashba SOC system. New J. Phys. 17, 123005 (2015).
[34] Ando, K., Takahashi, S., Harii, K., Sasage, K., Ieda, J., Maekawa, S., & Saitoh, E. Electric
manipulation of spin relaxation using the spin Hall effect. Phys. Rev. Lett. 101, 036601 (2008).
[35] Emori, S., Bauer, U., Ahn, S.-M., Martinez, E., & Beach, G. S. D. Current-driven dynamics
of chiral ferromagnetic domain walls. Nat. Mat. 12, 611 (2013).
[36] Ryu, K.-S., Thomas, L., Yang, S.-H., & Parkin, S. Chiral spin torque at magnetic domain
walls. Nat. Nanotech. 8, 527 (2013).
[37] Tatara, G. & Entel, P. Calculation of current-induced torque from spin continuity equation.
Phys. Rev. B 78, 064429 (2008).
[38] Mochizuki, M. Spin-wave modes and their intense excitation effects in skyrmion crystals. Phys.
Rev. Lett. 108, 017601 (2012).
[39] Onose, Y., Okamura, Y., Seki, S., Ishiwata, S. & Tokura, Y. Observation of magnetic excita-
tions of skyrmion crystal in a helimagnetic insulator Cu2OSeO3. Phys. Rev. Lett. 109, 037603
(2012).
[40] Ado, I. A., Qaiumzadeh, A., Duine, R. A., Brataas, A. & Titov, M. Asymmetric and symmetric
exchange in a generalized 2D Rashba ferromagnet. Phys. Rev. Lett. 121, 086802 (2018).
[41] Dzyaloshinskii, I. E. Thermodynamics theory of "weak" ferromagnetism in antiferromagnetic
substances. Sov. Phys. JETP 5, 1259 (1957).
[42] Moriya, T. Anisotropic superexchange interaction and weak ferromegnetism. Phys. Rev. 120,
91 (1960).
[43] Kim, K.-W., Lee, H.-W., Lee, K.-J. & Stiles, M. D. Chirality from interfacial spin-orbit
coupling effects in magnetic bilayers. Phys. Rev. Lett. 111, 216601 (2013).
[44] Kikuchi, T., Koretsune, T., Arita, R. & Tatara, G. Dzyaloshinskii-Moriya interaction as a
16
consequence of a Doppler shift due to spin-orbit induced intrinsic spin current. Phys. Rev.
Lett. 116, 247201 (2016).
[45] Nawaoka, K., Miwa, S., Shiota, Y., Mizuochi, N. & Suzuki, Y. Voltage induction of interfacial
Dzyaloshinskii-Moriya interaction in Au/Fe/MgO artificial multilayer. Appl. Phys. Express 8,
063004 (2015).
[46] Srivastava, T. et al. Large-voltage tuning of Dzyaloshinskii-Moriya interactinos: a route toward
dynamic control of skyrmion chirality. Nano Lett. 18, 4871 (2018).
[47] Haug, H. & Jauho, A. P. Quantum Kinetics in Transport and Optics of Semiconductors
(Springer, 2007).
[48] Mochizuki, M., & Watanabe, Y. Writing a skyrmion on multiferroic materials. Appl. Phys.
Lett. 107, 082409 (2015).
[49] Mochizuki, M., Creation of skyrmions by electric field on chiral lattice magnetic insulators.
Adv. Electron. Mater. 2, 1500180 (2016).
[50] Schott, M. et al. The skyrmion switch: Turning magnetic skyrmion bubbles on and off with
an electric field. Nano Lett. 17, 3006 (2017).
[51] Huang, P. et al. In situ electric field skyrmion creation in magnetoelectric Cu2OSeO3. Nano
Lett. 18, 5167 (2018).
[52] Kruchkov, A. J. et al. Direct E field control of the skyrmion phase in a magnetoelectric
insulator. Sci. Rep. 8, 10466 (2018).
[53] Wang, L. et al. Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostruc-
tures. Nat. Mat. 17, 1087 (2018).
[54] Woo, S. et al. Observation of room-temperature magnetic skyrmions and their current-driven
dynamics in ultrathin metallic ferromagnets. Nat. Mater. 15, 501 (2016).
[55] Yu, G. et al. Room-Temperature Skyrmion Shift Device for Memory Application. Nano Lett.
17, 261 (2017).
[56] Jiang, W. et al. Blowing magnetic skyrmion bubbles. Science 349, 283 (2015).
[57] Wang, W., Beg, M., Zhang, B., Kuch, W. & Fangohr, H. Driving magnetic skyrmions with
microwave fields. Phys. Rev. B 92, 020403(R) (2015).
[58] Takeuchi, A. & Mochizuki, M. Selective activation of an isolated magnetic skyrmion in a
ferromagnet with microwave electric fields. Appl. Phys. Lett. 113, 072404 (2018).
[59] Ikka, M., Takeuchi, A. & Mochizuki, M. Resonance modes and microwave-driven translational
17
motion of a skyrmion crystal under an inclined magnetic field. Phys. Rev. B 98, 184428 (2018).
[60] Liu, R. H., Lim, W. L. & Urazhdin, S. Control of current-induced spin-orbit effects in a
ferromagnetic heterostructure by electric field. Phys. Rev. B 89, 220409(R) (2014).
[61] Lv, W. et al. Electric-Field Control of Spin-Orbit Torques in WS2/Permalloy Bilayers. ACS
Appl. Mater. Interfaces 10, 2843 (2018).
[62] Belashchenko, K. D., Kovalev, A. A. & van Schilfgaarde, M. First-principles calculation of the
spin-orbit torques in a Co/Pt bilayer. arXiv:1810.11003.
[63] Gmitra, M., Kochan, D., Hogl, P. & Fabian, J. Trivial and inverted Dirac bands and the
emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides. Phys.
Rev. B 93, 155104 (2016).
[64] Nakamura, M. et al. Emergence of Topological Hall Effect in Half-Metallic Manganite Thin
Films by Tuning Perpendicular Magnetic Anisotropy. J. Phys. Soc. Jpn. 87, 074704 (2018).
Acknowledgements
This work was supported by JSPS KAKENHI (Grant No. 17H02924 and No. 16H06345),
Waseda University Grant for Special Research Projects (Project Nos. 2017S-101, 2018K-
257), and JST PRESTO (Grant No. JPMJPR132A).
18
Supplementary Material for "Electrically driven
spin torque and dynamical Dzyaloshinskii-Moriya
interaction in magnetic bilayer systems"
Calculation of Ψ-electron spin density S±
We provide details of the derivation of the Ψ-electron spin density S±.
In Fig. 3, we
present the Feynman diagrams associated with the Ψ-electron spin density induced by the
time-dependent RSOI. Here the vertex corrections due to the nonmagnetic impurity scat-
terings are not considered because they are negligible in the present case.
A(so)
S
A(ex)
FIG. 3:
Diagrammatic representations of the dominant contributions of the Ψ-electron spin
density S. The solid, wavy, and dotted lines represent the Green function, the RSOI A(so), and
the exchange interaction A(ex) in the rotated spin frame, respectively.
Expanding the lesser component with respect to q and Ω, the spin density S±(q, Ω) is
19
written
S±(q, Ω) =
(q′, Ω)A(ex)z
ν
(q − q′) + A(so)z
µ
(q′, Ω)A(ex)±
ν
(q − q′)i(cid:27)
2e
µ
Xq′ hA(so)±
k,ω,σ)2 − gr
k,ω,−σ(ga
µ
ie4
m2
e (cid:26) ± qνA(so)±
σXk Xω
×Xσ=±
Ω(cid:20) ± qνA(so)±
ie4
2m2
e
+
µ
(q, Ω) −
fωkµkνhga
k,ω,−σ(gr
k,ω,σ)2i
A(so)±
µ
(q′, Ω)A(ex)z
ν
(q − q′)(cid:21)
k,ω,σ(ga
k,ω,−σ)2 − (gr
k,ω,σ)2ga
k,ω,−σ
(q, Ω) −
2e
Xq′
dω(cid:20)gr
kµkν(cid:26) dfω
k,ω,−σ)ga
k,ω,−σ +
1
2
gr
k,ω,σ(gr
k,ω,σ − gr
k,ω,−σ)gr
k,ω,−σ(cid:21)
×Xσ=±
(σ ∓ 1)Xk Xω
k,ω,σ − ga
ga
k,ω,σ(ga
+
1
2
−fωhga
k,ω,−σgr
−gr
µ
ie23
m2
e
+
A(so)z
×Xσ=±
ΩXq′
(σ ∓ 1)Xk Xω
k,ω,σ(ga
k,ω,σ − ga
ga
−fωh(ga
k,ω,−σ)2(ga
1
2
−
k,ω,−σga
k,ω,σ(ga
k,ω,σ − ga
k,ω,−σ)2 + (ga
k,ω,−σ)2(ga
k,ω,σ)2
k,ω,σ(gr
k,ω,σ − gr
k,ω,−σ)2 − (gr
k,ω,−σ)2(gr
k,ω,σ)2i(cid:27)
(q′, Ω)A(ex)±
(q − q′)
ν
kµkν(cid:26) dfω
dω(cid:20)gr
k,ω,σga
k,ω,−σga
k,ω,σ − gr
k,ω,−σgr
k,ω,σga
k,ω,−σ
k,ω,−σ)ga
k,ω,−σ −
1
2
gr
k,ω,σ(gr
k,ω,σ − gr
k,ω,−σ)gr
k,ω,−σ(cid:21)
k,ω,σ)2 − (gr
k,ω,−σ)2(gr
k,ω,σ)2i(cid:27).
(14)
,
(15)
Using the following relation,
± i∇νA(so)±
µ
+
2e
the spin density S±(r, t) is rewritten as
A(so)±
µ A(ex)z
ν
=
2e
A(so)z
µ A(ex)±
ν
S±(r, t) =
8e23
m2
e
A(so)z
µ
(r, t)A(ex)±
ν
+
4e23Jex
m2
e
(r, t)
µ
∂A(so)z
∂t
A(ex)±
ν
±iIm(cid:20)σ
dfω
dω
gr
k,ω,σ(ga
k,ω,−σ)2ga
(r)ImXσ=±
σXk Xω
(r)Xσ=±Xk Xω
k,ω,σ + 2Jexfω(ga
fωkµkνga
k,ω,−σ(ga
k,ω,σ)2
kµkν(cid:26)dfω
dω
k,ω,−σ)3(ga
k,ω,σ)3(cid:21)(cid:27).
Re(ga
k,ω,σ − gr
k,ω,σ)(ga
k,ω,−σ)2ga
k,ω,σ
(16)
Here we neglect contributions from the products of ga to calculate terms proportional to the
first order in Ω as they only give small corrections compared with those from the products
20
of gr and ga. Therefore, the spin density reduces to
S±(r, t) =
8e23
m2
e
−
Jex
2
∂A(so)z
µ
A(ex)±
ν
(r)(cid:20)A(so)z
µ
(r, t)ImXσ=±
σXk Xω
(Re ∓ iσIm)Xk Xω
2 hC (2)
(r, t) −
Jex
µ
(r, t)
∂t Xσ=±
(r)(cid:26)C (1)
µν A(so)z
=
8e2
me
A(ex)±
ν
fωkµkνga
k,ω,−σ(ga
k,ω,σ)2
dfω
dω
kµkνgr
k,ω,σ(ga
k,ω,−σ)2ga
k,ω,σ(cid:21)
µν ∓ iC (3)
µ
µν i ∂A(so)z
∂t
(r, t)
(cid:27).
(17)
The summations over k and ω are performed in the following manner,
(ω − ε + εF,−σ − iη)(ω − ε + εF,σ − iη)2
ε
2
me
νe
2π
C (1)
µν =
=
=
=
4πJ 2
ex
4πJ 2
ex
fωkµkνga
k,ω,−σ(ga
k,ω,σ)2
νe
νe
0
σXk Xω
ImXσ=±
δµνImXσ=±Z ∞
δµνImXσ=±
δµνImXσ=±
δµνImZ Jex
δµνImZ Jex
δµν(cid:26) εF
ex − η2
Jex
νe
νe
−Jex
−Jex
4πJ 2
ex
4πJ 2
ex
νeη
16πτ Jex
F − J 2
ε2
Jexη
ε
ε − σJex
−∞
−∞
−∞
−∞
−∞
dω
dω
dω
dε Z 0
dε Z 0
dε Z 0
σZ 0
σZ −σJex
dε Z 0
dε εh ln (ε + εF − iη) + iπi
ln(cid:20) (εF + Jex)2 + η2
(εF − Jex)2 + η2(cid:21) − 2
εF + Jex(cid:19) − tan−1(cid:18)
ω + ε + εF − iη
dω
−∞
η
ε
(cid:20) tan−1(cid:18)
= −
= −
= −
+
ω + ε + εF,σ − iη
ω + ε + εF − iη
η
εF − Jex(cid:19)(cid:21)(cid:27),
(18)
21
C (2)
µν =
=
=
2
me
νe
2π
ReXσ=±Xk Xω
δµνReXσ=±Z 0
δµνReXσ=±
−∞
νe
8πJex
dfω
dω
kµkνgr
k,ω,σ(ga
k,ω,−σ)2ga
k,ω,σ
dε
(ε + εF,σ + iη)(ε + εF,−σ − iη)2(ε + εF,σ − iη)
ε
σZ 0
−∞
dε(cid:20)
1
σεFJex
i2η(σJex − iη)2(cid:18)
ε + εF − σJex − iη(cid:19) −
1
−
−
1
ε + εF + σJex − iη(cid:19)
(ε + εF − σJex + iη)2(cid:21)
1
εF − σJex + iη
σJex − iη
ε + εF − σJex + iη
−
1
i2η(cid:18)
1
ε + εF − σJex + iη
=
νe
8πJex
δµνReXσ=±
σ(cid:26)
σεFJex
i2η(σJex − iη)2(cid:20) ln(cid:18)εF − σJex + iη
εF + σJex − iη(cid:19) − i2π(cid:21)
σJex − iη(cid:27)
1
−
= −
−
−
1
εF − σJex − iη(cid:19) − i2π(cid:21) +
i2η(cid:20) ln(cid:18) εF − σJex + iη
ex − η2)
ex + η2)
ex + η2)2 δµν(cid:26)1 −
ex − η2)
η
νeτ εF(J 2
2(J 2
1
η(J 2
πεF(J 2
2π(cid:20) tan−1(cid:18)
ex + η2)2
(J 2
εF + Jex(cid:19) + tan−1(cid:18)
ex − η2)(cid:20) tan−1(cid:18)
2πεFJex(J 2
η
εF − Jex(cid:19)(cid:21)
+
ηJex
ex − η2)
2π(J 2
ln(cid:20) (εF + Jex)2 + η2
(εF − Jex)2 + η2(cid:21)
η
εF + Jex(cid:19) − tan−1(cid:18)
η
εF − Jex(cid:19)(cid:21)(cid:27),
(19)
C (3)
µν =
2
me
ImXσ=±
σXk Xω
δµνImXσ=±Z 0
−∞
νe
8πJex
=
dfω
dω
kµkνgr
k,ω,σ(ga
k,ω,−σ)2ga
k,ω,σ
dε(cid:20) εF(σ2Jex − iη)
σ2Jex(σJex − iη)2(cid:18)
1
ε + εF − σJex + iη
−
1
ε + εF + σJex − iη(cid:19)
εF − σJex + iη
σJex − iη
1
(ε + εF − σJex + iη)2(cid:21)
−
1
σ2Jex(cid:18)
=
νe
8πJex
δµνImXσ=±
ε + εF − σJex + iη
1
1
−
ε + εF − σJex − iη(cid:19) −
σ2Jex(σJex − iη)2(cid:20) ln(cid:18)εF − σJex + iη
(cid:26) εF(σ2Jex − iη)
εF − σJex − iη(cid:19) − i2π(cid:21) +
1
1
σ2Jex(cid:20) ln(cid:18) εF − σJex + iη
εF + σJex − iη(cid:19) − i2π(cid:21)
σJex − iη(cid:27)
ex + η2)
8πJ 3
ex
ln(cid:20) (εF + Jex)2 + η2
(εF − Jex)2 + η2(cid:21)
νeεFJex
ex + η2)2 δµν(cid:26)1 −
η(J 2
ex + η2)
2πεFJ 2
ex
+
η(3J 2
η
εF + Jex(cid:19) + tan−1(cid:18)
η
εF − Jex(cid:19)(cid:21)
2(J 2
1
2π(cid:20) tan−1(cid:18)
ex + η2)2
4πεFJ 3
(J 2
ex (cid:20) tan−1(cid:18)
−
= −
−
−
η
εF + Jex(cid:19) − tan−1(cid:18)
η
εF − Jex(cid:19)(cid:21)(cid:27).
(20)
22
|
1808.05960 | 2 | 1808 | 2018-10-22T14:27:36 | Dynamical density response and optical conductivity in topological metals | [
"cond-mat.mes-hall"
] | Topological metals continue to attract attention as novel gapless states of matter. While there by now exists an exhaustive classification of possible topologically nontrivial metallic states, their observable properties, that follow from the electronic structure topology, are less well understood. Here we present a study of the electromagnetic response of three-dimensional topological metals with Weyl or Dirac nodes in the spectrum, which systematizes and extends earlier pioneering studies. In particular, we argue that a smoking-gun feature of the chiral anomaly in topological metals is the existence of propagating chiral density modes even in the regime of weak magnetic fields. We also demonstrate that the optical conductivity of such metals exhibits an extra peak, which exists on top of the standard metallic Drude peak. The spectral weight of this peak is transferred from high frequencies and its width is proportional to the chiral charge relaxation rate. | cond-mat.mes-hall | cond-mat | Dynamical density response and optical conductivity in topological metals
Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
(Dated: October 23, 2018)
A.A. Burkov
Topological metals continue to attract attention as novel gapless states of matter. While there
by now exists an exhaustive classification of possible topologically nontrivial metallic states, their
observable properties, that follow from the electronic structure topology, are less well understood.
Here we present a study of the electromagnetic response of three-dimensional topological metals with
Weyl or Dirac nodes in the spectrum, which systematizes and extends earlier pioneering studies. In
particular, we argue that a smoking-gun feature of the chiral anomaly in topological metals is the
existence of propagating chiral density modes even in the regime of weak magnetic fields. We also
demonstrate that the optical conductivity of such metals exhibits an extra peak, which exists on
top of the standard metallic Drude peak. The spectral weight of this peak is transferred from high
frequencies and its width is proportional to the chiral charge relaxation rate.
I.
INTRODUCTION
Topological metal (TM) is a recently discovered new
phase of matter.1 -- 18 It is characterized by topological in-
variants, defined on the Fermi surface,19 -- 22 rather than in
the whole Brillouin zone (BZ), as in topological insulators
(TI). Such Fermi surface topological invariants arise as
a consequence of monopole-like singularities in the elec-
tronic structure, Weyl nodes, whose significance was em-
phasized early on by Volovik and by Murakami.19,22
Perhaps the most interesting feature of TM is that
their electronic structure topology leads not only to spec-
troscopic manifestations in the form of edge states,5 a
feature they share with TI, but also to nontrivial re-
sponse. This novel response is usually described as being
a consequence of the chiral anomaly,23 which may be un-
derstood in the following way. While the appearance of
gapless Weyl nodes in the spectrum has a topological ori-
gin, it also leads to an emergent symmetry, or an emer-
gent conservation law, namely conservation of the chiral
charge. This conservation law becomes increasingly more
precise as the Fermi energy of the TM approaches the
Weyl nodes. However, this apparent low-energy conser-
vation law is violated when the system is coupled to an
electromagnetic field. The origin of this violation lies in
the fact that the chiral symmetry can never be an exact
symmetry of a (3+1)-dimensional Dirac fermion on a lat-
tice, as first pointed out by Nielsen and Ninomiya,24 as
a single (or, more generally, an odd number) Dirac point
in the BZ is topologically incompatible with the chiral
symmetry. Thus, while the chiral symmetry appears to
be present when one focuses only on states at the small
Fermi surface, enclosing the Weyl points, the global lack
of chiral symmetry manifests in the electromagnetic re-
sponse of the system. This property is of great interest
both because it has a topological origin and because it
is contrary to one of the fundamental postulates of the
standard theory of metals, which states that anything of
observable consequence in a metal involves only states on
the Fermi surface.
The chiral anomaly in TM has numerous predicted ob-
servable consequences, which include negative longitudi-
nal magnetoresistance (LMR),25,26 giant planar Hall ef-
fect (PHE),27,28 and anomalous Hall effect.29 While most
of these have already been observed experimentally in
various TM materials,18,30 -- 34 none of these phenomena
by themselves may be regarded as smoking-gun manifes-
tations of the chiral anomaly, in the sense that all of them
may in principle arise from unrelated sources, and these
sources all have to be ruled out before the chiral anomaly
origin may be claimed. An excellent discussion of these
issues in the case of the negative LMR may be found in
Ref. 35.
As first discussed by Altland and Bagrets,36 a truly
unique feature of the chiral anomaly is the highly un-
usual dependence of the transport properties, such as the
sample conductance, on the relevant length (and time or
frequency, as will be shown in this paper) scales. In an
ordinary three-dimensional (3D) metal the conductance
scales linearly with the sample size L
G(L) = σL,
(1)
where the Drude conductivity σ is related to the density
of states at the Fermi energy g and the diffusion constant
D by the Einstein relation
σ = e2gD.
(2)
Corrections to Eq. (1) are small in good metals, the small
parameter being 1/kF (cid:96), where kF is the Fermi momen-
tum (¯h = c = kB = 1 units are used henceforth) and (cid:96)
is the mean free path; the corrections arise only at very
low temperatures as a result of quantum interference phe-
nomena. The scaling of Eq. (1) is partly a consequence of
the fact that, in an ordinary metal in the diffusive trans-
port regime, i.e. at length scales, longer than the mean
free path (cid:96) and time scales longer than the momentum
relaxation time τ , no intrinsic hydrodynamic (i.e. long)
length scales remain, besides the sample size L.
However, as discussed in Ref. 36, in a TM two addi-
tional hydrodynamic length scales emerge. These are the
chiral charge diffusion length
(cid:112)
Lc =
Dτc,
(3)
8
1
0
2
t
c
O
2
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
0
6
9
5
0
.
8
0
8
1
:
v
i
X
r
a
G(L) =
e2Nφ
2π
,
(5)
where
where τc (cid:29) τ is the chirality relaxation time, and
La = D/Γ,
(4)
where Γ = eB/2π2g and B is the applied magnetic field.
La is a new purely quantum mechanical magnetic-field-
√
related length scale, which is distinct from the magnetic
eB and which arises from the chiral
length (cid:96)B = 1/
anomaly. It is related to the magnetic length as La ∼
(cid:96)(kF (cid:96)B)2 and is thus much longer than the mean free
path in the weak-field (quasiclassical) regime kF (cid:96)B (cid:29) 1,
which we will be interested in here. Transport properties
of TM may then be shown to depend strongly on the
interplay of the three length scales: L, Lc, and La.27,36
In particular, the strength of the negative LMR and the
PHE depends on the parameter Lc/La, getting stronger
as this ratio increases.
Particularly striking phenomena arise when La < L <
c/La,36 which is an extended and accessible range when
L2
Lc/La (cid:29) 1.
In this regime the sample conductance is
given by
where Nφ = L2/2π(cid:96)2
B is the number of magnetic flux
quanta, piercing the sample with cross-section area L2.
This means that in the regime La < L < L2
c/La the
sample transports electric current as Nφ one-dimensional
(1D) conduction channels and the conduction is ballistic
and dissipationless [of course Eq. (5) only represents the
dominant part of the conductance and ordinary dissipa-
tive Ohmic conduction is also present]. This is striking
because it arises in a 3D metal with a Fermi surface and
in the weak magnetic field regime kF (cid:96)B (cid:29) 1. The ex-
istence of such ballistic quasi-1D transport regime is a
smoking-gun manifestation of the chiral anomaly in 3D
TM.
In this paper we further elaborate on this striking prop-
erty of TM and consider their related dynamical proper-
ties.
In particular, we demonstrate that the quasi-1D
transport regime manifests in dynamics as chiral propa-
gating density modes, which exist in a range of wavevec-
tor values given by
La/L2
c < q < 1/La.
(6)
This "one-dimensionalization" of the electron dynamics
is a unique property of TM, related to the chiral anomaly.
We also demonstrate that related phenomena exist in
frequency-dependent properties of TM. In particular we
demonstrate that the frequency dependence of the op-
tical conductivity of TM has a non-Drude form, where
an extra narrow peak exists at low frequencies, whose
width scales as 1/τc while height is a function of the
ratio Lc/La. The spectral weight of this extra peak is
transferred from high frequencies.
The rest of the paper is organized as follows. In Sec-
tion II we calculate the full density response function of
a simple model of a TM in an external magnetic field.
2
We analyze the eigenmode structure of the density re-
sponse function and demonstrate the presence of chiral
propagating density modes when La/L2
c < q < 1/La. In
Section III we relate the existence of these propagating
chiral modes to observable transport properties of TM.
We also demonstrate that similar phenomena exist in the
frequency domain: we analyze the frequency dependence
of the optical conductivity and point out its non-Drude
nature. We conclude in Section IV with a brief discussion
of the main results.
II. DENSITY RESPONSE FUNCTION OF A
TOPOLOGICAL METAL
We start from the simplest model of a TM, which con-
tains the necessary ingredients to capture the physics we
want to describe. The simplest such model is the follow-
ing model of a lattice Dirac fermion
H = tγ0γµ sin kµ + ∆(k)γ0,
∆(k) = t(3 − cos kx − cos ky − cos kz),
(7)
(8)
and γµ are Dirac gamma matrices in, for example, the
Weyl representation
γ0 = τ x, γi = −iτ yσi, i = 1, 2, 3.
(9)
This model describes two Weyl nodes of opposite chi-
rality at the Γ-point in the BZ (the effects we will be
discussing do not depend on the momentum-space sep-
aration between the Weyl nodes). Since a single Dirac
point in the BZ is incompatible with the chiral symme-
try, Eq. (7) also has an essential property, shared by all
real Weyl and Dirac semimetals, that the chiral symme-
try (chiral charge conservation) is only an approximate
low-energy symmetry of Eq. (7), which emerges when H
is expanded to linear order in k near the Γ-point. In this
case we have
H = tγ0γµkµ,
(10)
and the chirality operator γ5 = iγ0γ1γ2γ3 = τ z com-
mutes with H, which is no longer true once nonlinear
terms are included. This gives a finite (but small) chiral
charge relaxation rate, which is an essential property of
a Weyl or Dirac semimetal.
We add a uniform magnetic field in the z-direction
B = B z, and choose the Landau gauge for the vector
potential A = xB y. We will ignore the Zeeman effect for
simplicity. To find the eigenstates of H in the presence
of the magnetic field, we expand to first order in kx,y,
while keeping the full kz dependence. This is a good ap-
proximation in the regime of weak magnetic fields when
kF (cid:96)B (cid:29) 1, which we will be interested in. For computa-
tional convenience we also make the following canonical
transformation in the original Weyl representation of the
gamma-matrices:
τ x,y → σzτ x,y, σx,y → τ zσx,y.
(11)
This brings the Hamiltonian to the form
H = t(σxπx + σyπy) + m(kz)σz,
(12)
where π = −i∇ + eA is the canonical momentum and
m(kz) = tτ z sin kz + ∆(0, 0, kz)τ x.
(13)
Diagonalizing Eq. (12), we find the eigenstate wavefunc-
tions
n, s, p, ky, kz(cid:105) = zsp
+ zsp
n↑τ (kz)n − 1, ky, kz,↑, τ(cid:105)
n↓τ (kz)n, ky, kz,↓, τ(cid:105),
(14)
where n is an integer Landau level index, ↑,↓ label the
two eigenvalues of σz, τ = ± are the two eigenval-
ues of τ z, and s, p = ±. Here and throughout sums
over repeated indices will be implicit. The amplitudes
zsp
nστ (kz) may be regarded as components of an eigenvec-
tor zsp
(cid:115)
(cid:32)(cid:115)
n (kz)(cid:105) ⊗ up(kz)(cid:105), where
n (kz)(cid:105) = vsp
(cid:115)
(cid:32)(cid:115)
t sin kz
m(kz)
1√
2
1 + p
1 − p
, p
up
n(kz)(cid:105) =
(cid:33)
(cid:33)
,
t sin kz
m(kz)
vsp
n (kz)(cid:105) =
1√
2
1 + sp
m(kz)
n(kz)
, s
1 − sp
m(kz)
n(kz)
.
(15)
The corresponding energy eigenvalues are given by
(cid:113)
2ω2
Bn + m2(kz),
nsp(kz) = sn(kz) = s
(16)
where m(kz) = 2t sin kz, and ωB = t/(cid:96)B, for all n ≥ 1.
The lowest Landau level (LLL), corresponding to n = 0,
is special: it does not have the s label and its eigenenergy
and the corresponding eigenvector are given by
and
0p(kz) = −pm(kz),
0(kz)(cid:105) = (0, 1).
vp
(17)
(18)
We add to the Hamiltonian Eq. (12) random impurity
potential V (r), which we take to be of the Gaussian white
noise form with (cid:104)V (r)(cid:105) = 0 and
(cid:104)V (r)V (r(cid:48))(cid:105) = γ2δ(r − r(cid:48)).
(19)
We take the impurity potential to be independent of
the spin and orbital pseudospin indices. Physically this
means that the impurities are taken to be nonmagnetic
and the potential is smooth enough that its spatial vari-
ation on the scale of the unit cell of the crystal is neg-
ligible. The last assumption is not essential, but does
simplify the subsequent calculations.
3
We will evaluate the density response for the above
model of a TM using the self-consistent Born approxi-
mation (SCBA) and the ladder approximation to perform
the impurity averaging. This is a conserving approxima-
tion, meaning it preserves exact conservation laws and
sum rules, and amounts physically to neglecting quantum
interference effects. This is justified in the quasiclassical
transport regime, which we will confine ourselves to: we
assume that we are interested in the density response
at length scales much longer than the inverse Fermi mo-
mentum and time scales much longer than the inverse
Fermi energy; the impurity scattering is taken to be weak
enough, so that kF (cid:96) (cid:29) 1 and, as already mentioned,
magnetic field is also assumed to be weak, which means
kF (cid:96)B (cid:29) 1. Finally, we will assume that the Fermi energy
is close to the Dirac point F (cid:28) t (but F τ (cid:29) 1), which
defines the regime of a TM. The last condition ensures
the near conservation of the chiral charge, as will be seen
explicitly below.
The calculation of the SCBA impurity self-energy in
a similar model has already been discussed in detail in
Ref. 26. We will thus omit the details of this calculation
here and simply quote the result. One obtains that in the
quasiclassical transport regime the impurity scattering
rate is independent of both the Landau level index n and
the longitudinal momentum component kz and is given
by the standard SCBA expression
1
τ
=
πγ2g
2
,
(20)
where the density of states at the Fermi energy is given
by
g =
F
πt2
Θ[F − m(kz)],
dkz
2π
(21)
(cid:90) π
−π
Θ(x) being the Heaviside step function.
We evaluate the density response function by summing
the impurity ladder diagrams. We start from the most
general retarded density matrix response function, de-
fined as
χα1α2,α3α4(r, tr(cid:48)
(cid:48))
, t
(cid:48))(cid:104)[α1α2
†
(r, t),
α3α4
= −iΘ(t − t
(r(cid:48)
(cid:48))](cid:105),
, t
(22)
where the density matrix is defined as
α1α2(r, t) = Ψ†
α2
(r, t)Ψα1
(r, t),
(23)
and α = (στ ) is a composite index, which encodes both
the spin and orbital pseudospin labels.
The standard procedure to find the real-time response
function Eq. (22) is to start from the corresponding
imaginary-time response function
χα1α2,α3α4(r, τr(cid:48)
(cid:48))
, τ
, τ − τ
(cid:48))Gα4α2(r(cid:48)
= −Gα1α3 (r, r(cid:48)
(24)
where Gαα(cid:48)(r, r(cid:48), τ − τ(cid:48)) is the exact imaginary-time
Green's function, which depends on both r and r(cid:48) sepa-
rately due to both the lack of translational symmetry in
, r, τ
(cid:48) − τ ),
4
FIG. 1. Diagrammatic representation of (a) SCBA Green's
function. Thin line represents the bare Green's function,
thick line is the SCBA impurity-averaged Green's function
and the dashed line represents the disorder potential correla-
tor (cid:104)V (r)V (r(cid:48))(cid:105) = γ2δ(r − r(cid:48)). (b) Density response function
χ. (c) Bethe-Salpeter equation for the diffusion vertex D.
The physical meaning of the two contributions to the
density response function, χI and χII , is that χI arises
from states on the Fermi surface, while all filled states
contribute to χII . χII thus represents equilibrium part of
the response and is easily shown to be a diagonal matrix,
with the nonzero matrix elements equal to −g. On the
other hand, χI represents the dynamical nonequilibrium
part of the density response and is given by
χI (q, Ω) = − iΩ
2πγ2I(q, Ω)D(q, Ω),
(33)
d3r d3r
(cid:48)
e
−iq·(r−r(cid:48))
Iα1α2,α3α4 (q, Ω) =
, Ω)GA
α1α3
γ2
L3
(r(cid:48)
α4α2
, r, 0),
× GR
(r, r(cid:48)
GR,A being the
retarded and advanced real-time
impurity-averaged SCBA Green's functions. They are
explicitly given by
(cid:88)
αα(cid:48) (r, r(cid:48)
GR,A
(cid:104)r, αn, s, p, ky, kz(cid:105)(cid:104)n, s, p, ky, kzr(cid:48), α(cid:48)(cid:105)
(34)
, ω)
ω − ξnsp(kz) ± i/2τ
,
=
nspkykz
(35)
where ξnsp(kz) ≡ nsp(kz) − F .
For a general direction of the wavevector q, the eval-
uation of I(q, Ω) is severely complicated by the fact
that contributions of different Landau levels are mixed
in Eq. (34). This is not the case only when q = qz,
when translational symmetry in the xy-plane leads to
decoupling of the individual Landau level contributions.
D = 1 + ID,
where I ≡ γ2P 0. The solution of this equation is
(29)
where
(cid:90)
(cid:88)
the presence of a random impurity potential, and the lack
of gauge invariance in the presence of an external mag-
netic field. One then performs impurity averaging, which
restores translational invariance in the density response
function and gives
χα1α2,α3α4 (q, iΩ) =
1
β
where
Pα1α2,α3α4(q, iω, iω + iΩ),
iω
(25)
Pα1α2,α3α4(r − r(cid:48)
= −(cid:104)Gα1α3 (r, r(cid:48)
, iω, iω + iΩ)
, iω + iΩ)Gα4α2 (r(cid:48)
, r, iω)(cid:105),
(26)
is the impurity-averaged generalized polarization bubble,
and β = 1/T is the inverse temperature. In the quasiclas-
sical regime we are interested in, P may be evaluated by
summing all the SCBA diagrams for the impurity self-
energy and the ladder vertex corrections, as shown in
Fig. 1. The result of this diagram summation may be
written in a shorthand matrix notation as
P = P 0D,
(27)
where P 0 is the bare polarization bubble, in which only
the self-energy corrections are included
P 0
α1α2,α3α4
= −Gα1α3 (r, r(cid:48)
is
(r − r(cid:48)
, iω, iω + iΩ)
, iω + iΩ)Gα4α2 (r(cid:48)
Gαα(cid:48)(r, r(cid:48), iω) here
the disorder-averaged SCBA
Green's function, which still depends on r and r(cid:48) sepa-
rately since it is a gauge-dependent quantity in the pres-
ence of an external magnetic field. The vertex part D,
which is also known as the diffusion propagator, or dif-
fuson, satisfies the following Bethe-Salpeter equation
, r, iω).
(28)
D = (1 − I)−1.
(30)
(cid:90) ∞
To obtain the real-time retarded response function we
analytically continue to real frequency iΩ → Ω+iη, which
gives
−∞
d
2πi
χ(q, Ω) =
nF () [P(q, + iη, + Ω + iη)
− P(q, − iη, + Ω + iη) + P(q, − Ω − iη, + iη)
− P(q, − Ω − iη, − iη)] .
(31)
In the low-frequency limit, when Ω (cid:28) F , this simplifies
to
χ(q, Ω) = − iΩ
2π
(cid:90) ∞
P(q,−iη, Ω + iη)
d nF ()ImP(q, + iη, + Ω + iη)
− 1
π
≡ χI (q, Ω) + χII (q, Ω).
−∞
(32)
=+=+<latexit sha1_base64="TwKQu5I6W5bc9HOXn7rGty6B3x4=">AAAB63icbVBNSwMxEJ3Ur1q/qh69BIvgqeyKoMeiF48VbC20S8mm2W5okl2SrFCW/gUvHhTx6h/y5r8x2+5BWx8MPN6bYWZemApurOd9o8ra+sbmVnW7trO7t39QPzzqmiTTlHVoIhLdC4lhgivWsdwK1ks1IzIU7DGc3Bb+4xPThifqwU5TFkgyVjzilNhCGtCYD+sNr+nNgVeJX5IGlGgP61+DUUIzyZSlghjT973UBjnRllPBZrVBZlhK6ISMWd9RRSQzQT6/dYbPnDLCUaJdKYvn6u+JnEhjpjJ0nZLY2Cx7hfif189sdB3kXKWZZYouFkWZwDbBxeN4xDWjVkwdIVRzdyumMdGEWhdPzYXgL7+8SroXTd9r+veXjdZNGUcVTuAUzsGHK2jBHbShAxRieIZXeEMSvaB39LForaBy5hj+AH3+AP+rjjI=</latexit><latexit sha1_base64="TwKQu5I6W5bc9HOXn7rGty6B3x4=">AAAB63icbVBNSwMxEJ3Ur1q/qh69BIvgqeyKoMeiF48VbC20S8mm2W5okl2SrFCW/gUvHhTx6h/y5r8x2+5BWx8MPN6bYWZemApurOd9o8ra+sbmVnW7trO7t39QPzzqmiTTlHVoIhLdC4lhgivWsdwK1ks1IzIU7DGc3Bb+4xPThifqwU5TFkgyVjzilNhCGtCYD+sNr+nNgVeJX5IGlGgP61+DUUIzyZSlghjT973UBjnRllPBZrVBZlhK6ISMWd9RRSQzQT6/dYbPnDLCUaJdKYvn6u+JnEhjpjJ0nZLY2Cx7hfif189sdB3kXKWZZYouFkWZwDbBxeN4xDWjVkwdIVRzdyumMdGEWhdPzYXgL7+8SroXTd9r+veXjdZNGUcVTuAUzsGHK2jBHbShAxRieIZXeEMSvaB39LForaBy5hj+AH3+AP+rjjI=</latexit><latexit sha1_base64="TwKQu5I6W5bc9HOXn7rGty6B3x4=">AAAB63icbVBNSwMxEJ3Ur1q/qh69BIvgqeyKoMeiF48VbC20S8mm2W5okl2SrFCW/gUvHhTx6h/y5r8x2+5BWx8MPN6bYWZemApurOd9o8ra+sbmVnW7trO7t39QPzzqmiTTlHVoIhLdC4lhgivWsdwK1ks1IzIU7DGc3Bb+4xPThifqwU5TFkgyVjzilNhCGtCYD+sNr+nNgVeJX5IGlGgP61+DUUIzyZSlghjT973UBjnRllPBZrVBZlhK6ISMWd9RRSQzQT6/dYbPnDLCUaJdKYvn6u+JnEhjpjJ0nZLY2Cx7hfif189sdB3kXKWZZYouFkWZwDbBxeN4xDWjVkwdIVRzdyumMdGEWhdPzYXgL7+8SroXTd9r+veXjdZNGUcVTuAUzsGHK2jBHbShAxRieIZXeEMSvaB39LForaBy5hj+AH3+AP+rjjI=</latexit><latexit sha1_base64="TwKQu5I6W5bc9HOXn7rGty6B3x4=">AAAB63icbVBNSwMxEJ3Ur1q/qh69BIvgqeyKoMeiF48VbC20S8mm2W5okl2SrFCW/gUvHhTx6h/y5r8x2+5BWx8MPN6bYWZemApurOd9o8ra+sbmVnW7trO7t39QPzzqmiTTlHVoIhLdC4lhgivWsdwK1ks1IzIU7DGc3Bb+4xPThifqwU5TFkgyVjzilNhCGtCYD+sNr+nNgVeJX5IGlGgP61+DUUIzyZSlghjT973UBjnRllPBZrVBZlhK6ISMWd9RRSQzQT6/dYbPnDLCUaJdKYvn6u+JnEhjpjJ0nZLY2Cx7hfif189sdB3kXKWZZYouFkWZwDbBxeN4xDWjVkwdIVRzdyumMdGEWhdPzYXgL7+8SroXTd9r+veXjdZNGUcVTuAUzsGHK2jBHbShAxRieIZXeEMSvaB39LForaBy5hj+AH3+AP+rjjI=</latexit>=(a)(b)(c) 5
near conservation is a defining property of a TM, as dis-
cussed above. Thus we may project the original 16 × 16
matrix onto the 2 × 2 subspace, describing the coupled
transport of the electric and the chiral charge, which is
accomplished as
Iab(q, Ω) =
Iα1α2,α3α4(q, Ω)Γb
(36)
Γa
α3α4 ,
α2α1
1
4
where a, b = 0, 5, corresponding to the electric (0) or chi-
ral (5) charges, and Γa,b are the corresponding operators,
i.e.
Γ0 = τ 0σ0 = 1, Γ5 = τ zσ0 = τ z.
(37)
After a tedious, but straightforward, calculation, we ob-
tain
Fortunately, this is in fact the case of primary interest to
us, since the chiral anomaly leads to unusual transport
phenomena in the direction of the magnetic field. Thus
we will take q = qz henceforth.
In this case the evaluation of I(q, Ω) is relatively
straightforward, particularly in the weak magnetic field
regime kF (cid:96)B (cid:29) 1 that we are interested in. An addi-
tional simplification arises from the fact that we are not
interested in the whole 16 × 16 matrix I, which contains
a lot of unnecessary information. We are interested only
in the response of conserved, or nearly conserved, quan-
tities, which will always dominate everything else at long
times and long distances.
In a generic TM, we expect
only two such quantities to exist: the electric charge,
which is strictly conserved, and the chiral charge, whose
(cid:18) 1 − iΩτ − iq(cid:96)
(cid:19)
− i(F /t)2(1 − iΩτ )4
1 − iΩτ + iq(cid:96)
,
ln
8(q(cid:96))5
i
2q(cid:96)
(cid:20) i
I00(q, Ω) =
I55(q, Ω) =
I05(q, Ω) = I50(q, Ω) =
2q(cid:96)
(cid:21)
ln
(cid:18) 1 − iΩτ − iq(cid:96)
1 − iΩτ + iq(cid:96)
(cid:19)
− (F /t)2(1 − iΩτ )
12(q(cid:96))2
+
(F /t)2(1 − iΩτ )3
4(q(cid:96))4
,
i
2(kF (cid:96)B)2
q(cid:96)
(1 − iΩτ )2 + (q(cid:96))2 .
(38)
Substituting this into Eq. (33), we obtain the dynami-
cal nonequilibrium contribution to the density response
χI (q, Ω), while the equilibrium contribution is a diagonal
matrix given by
55(q, Ω) = −g,
(39)
χII
00(q, Ω) = χII
as already mentioned above.
A comment is in order here. As can be seen from
Eq. (38), only the off-diagonal matrix element I05 de-
pends on the magnetic field. This is true in the quasi-
classical limit kF (cid:96)B (cid:29) 1 only, and is a consequence of
the fact that in this limit we may ignore the effect of
the magnetic field on the density of states. Summation
over the Landau level index n, which arises when evaluat-
ing Eq. (38), may in this case be replaced by integration
and the magnetic field dependence disappears to lead-
ing order in 1/kF (cid:96)B. In contrast, the off-diagonal matrix
element I05 arises entirely from the contribution of the
n = 0 Landau level. This contribution is proportional to
1/(kF (cid:96)B)2, but leads to large effects at long length scales
and long times, as will be seen below, provided τc/τ (cid:29) 1.
Eqs. (32), (33), (38) and (39) give a general expression
for the density response function of a TM in the quasi-
classical regime
χ(q, Ω) = −g[iΩτI(q, Ω)D(q, Ω) + 1].
(40)
This expression is valid in either diffusive Ωτ, q(cid:96) (cid:28) 1 or
ballistic Ωτ, q(cid:96) (cid:29) 1 limits and may be used, in particular,
to study the ballistic-diffusive crossover regime. We will
start by analyzing the two limits.
A. Ballistic regime
In this regime all components of the matrix I are small
and thus D ≈ 1. Physically this means that we are look-
ing at short length and time scales at which the impurity
scattering may be ignored. While the response function
χ(q, Ω) is a 2 × 2 matrix, only its χ00(q, Ω) component
describes observable density response. Taking the limit
Ωτ, q(cid:96) → ∞ in Eqs. (38), (40) we obtain
(cid:18) Ω − qt + iη
(cid:19)(cid:21)
Ω + qt + iη
.
(41)
χ00(q, Ω) = −g
1 +
Ω
2qt
ln
(cid:20)
This is just the familiar Lindhard function (in the limit
q (cid:28) kF and Ω (cid:28) F ), describing the density response
of a clean Fermi liquid with the Fermi velocity t. The
imaginary part of χ00(q, Ω), which is determined by the
branch cuts of the Lindhard function
Imχ00(q, Ω) = g
Θ(qt − Ω),
πΩ
2qt
(42)
describes the excitation spectrum of the Fermi liquid,
which forms a particle-hole continuum. Thus in the bal-
listic regime and in the weak magnetic field limit chi-
ral anomaly has no effect on the density response of a
TM [its effects appear only at order 1/(kF (cid:96)B)2, which is
negligible compared to Eq. (41)]. This of course will no
longer be true if we tune the Fermi energy to zero (i.e.
to the ideal Weyl or Dirac semimetal limit), but this is
a fine-tuned, non-generic situation, and is of somewhat
less interest for this reason.
B. Diffusive regime
The situation is much more interesting in the diffusive
limit Ωτ, q(cid:96) (cid:28) 1. In this case I ≈ 1, and multiple impu-
rity scattering needs to be taken into account. Expanding
in Taylor series in Ωτ and q(cid:96), we obtain
I00(q, Ω) ≈ 1 + iΩτ − Dq2τ,
I05(q, Ω) = I50(q, Ω) ≈ iΓqτ,
I55(q, Ω) ≈ 1 + iΩτ − τ /τc − Dq2τ.
(43)
Here D = t2τ /3 = t(cid:96)/3 is the diffusion constant,
Γ =
eB
2π2g
=
t
2(kF (cid:96)B)2 ,
(44)
is a new transport coefficient, which describes the chiral-
anomaly-induced coupling between the electric and the
chiral charge densities, and
1
τc
=
2
F
20 t2τ
,
(45)
is the chiral charge relaxation rate. Note that the fact the
chiral charge relaxation rate vanishes in the limit F → 0
is a consequence of our assumption that the impurity
potential is diagonal in the spin and orbital indices and
thus commutes with the chiral charge operator γ5 = τ z.
In general this is not the case and we can expect some
residual chiral charge relaxation even in the F → 0 limit.
In the diffusive regime the dynamics of the density re-
sponse is determined by the poles of the diffusion propa-
gator D, instead of the branch cuts of the response func-
tion, as in the ballistic limit. From Eq. (43), the inverse
diffusion propagator is given by
D−1(q, Ω) =
(cid:18) −iΩτ + Dq2τ
−iΓqτ
(cid:19)
−iΩτ + τ /τc + Dq2τ
−iΓqτ
,
6
which gives the following explicit expression for the 00
component of the matrix response function, which corre-
sponds to the observable electric charge density response
(cid:20) Ω(Ω + i/τc + iDq2)
(Ω − Ω+)(Ω − Ω−)
(cid:21)
− 1
.
(51)
χ00(q, Ω) = g
We now note that the frequency Ω0 is purely imaginary
at the smallest momenta when
where we have introduced two new length scales
q <
1
2Γτc
=
La
2L2
c
≡ 1
L∗
,
(cid:112)
Lc =
Dτc,
(52)
(53)
which has the meaning of the chiral charge diffusion
length and
La =
D
Γ
=
2
3
(cid:96)(kF (cid:96)B)2.
(54)
La is a magnetic-field-related length scale, distinct
from the magnetic length, which arises from the chiral
anomaly. It is a long hydrodynamic length scale in the
weak magnetic field regime, in the sense that La (cid:29) (cid:96), but
it may still be much smaller that either the chiral charge
diffusion length Lc or the sample size L. In fact, the ra-
tio Lc/La quantifies the strength of the chiral-anomaly-
related density response phenomena, as will be seen be-
low.
Thus when q < 1/L∗ the eigenfrequencies of the diffu-
sion propagator are purely imaginary, which corresponds
to ordinary diffusion (nonpropagating) modes. However,
when q > 1/L∗ (which may be a very small momentum
when the ratio Lc/La is large), Ω0 is real, which signals
the emergence of a pair of propagating modes in this
regime. The modes are only weakly damped as long as
(46)
Ω0 ≈ Γq > Dq2,
(55)
The zeros of the determinant of this matrix determine
the eigenmode frequencies
where
Ω± = ±Ω0 − i(Dq2 + 1/2τc),
Ω0 =(cid:112)Γ2q2 − 1/4τ 2
c .
(47)
(48)
which defines the upper limit on the wavevector q =
1/La, above which the propagating modes disappear.
The propagating modes thus exist in the interval
1/L∗ < q < 1/La.
(56)
This interval is significant when Lc/La (cid:29) 1.
Within this interval of q the density response function
The diffusion propagator itself may then be written as
takes the following approximate form
D(q, Ω) =
1/τ
(Ω − Ω+)(Ω − Ω−)
(cid:18) iΩ − Dq2 − 1/τc
×
−iΓq
(49)
Taking into account that in the diffusive regime I ≈ 1,
iΩ − Dq2
−iΓq
.
we obtain from Eq. (40)
χ(q, Ω) ≈ −g[iΩτD(q, Ω) + 1],
(50)
(cid:19)
χ00(q, Ω) = g
Ω2
0
(Ω + iDq2)2 − Ω2
0
,
(57)
where Ω0 = Γq. This is the density response func-
tion of an effective 1D system with the Fermi velocity
Γ = t/2(kF (cid:96)B)2 (cid:28) t. Note that this is very different
from the 1D response one would obtain in a TM in the
quantum limit kF (cid:96)B < 1, when only the lowest n = 0
Landau level contributes to the density response. In this
case one gets Nφ 1D modes, which correspond to Nφ or-
bital states within the LLL. The Fermi velocity of these
1D modes is equal to the microscopic Fermi velocity t. In
our case, while the ultimate origin of the 1D dynamics is
still the LLL, its emergence is only possible in the diffu-
sive regime and thus requires multiple impurity scatter-
ing. The corresponding Fermi velocity Γ is proportional
to the applied magnetic field and is much smaller than t
in the quasiclassical weak-field regime. Such effectively
1D density response, with propagating rather than diffu-
sive density dynamics, which exists in a 3D metal with a
large Fermi surface (kF (cid:96) (cid:29) 1) in a weak magnetic field
(kF (cid:96)B (cid:29) 1) is a truly unique feature of TM and should
be regarded as their true smoking-gun characteristic.
On the other hand, when La > Lc, propagating modes
do not exist for any q and one obtains a pair of standard
diffusion modes
Ω+ = −iDq2, Ω− = −iDq2 − i/τc,
(58)
which correspond to independent diffusion of the electric
and the chiral charge densities.
III. TRANSPORT IN TOPOLOGICAL METALS
It is very useful to also look at the transport properties,
which follow from the density response, described in Sec-
tion II. In addition to providing further insight into the
physical meaning of the results, discussed in the previous
section, this will also allow us to calculate experimentally
measurable physical quantities, such as the frequency-
and scale-dependent conductivity.
A. Scale-dependent conductance
It is easy to show that Eqs. (49) and (50) for the dif-
fusion propagator and the generalized density response
function are equivalent to the following transport equa-
tion in real space and time, that the electric n0 and chiral
n5 charge densities must satisfy
∂n0
∂t
∂n5
∂t
= D∇2(n0 + gV0) + Γ · ∇(n5 + gV5),
= D∇2(n5 + gV5) − n5 + gV5
τc
+ Γ · ∇(n0 + gV0),
(59)
where V0 and V5 are external electric and chiral poten-
tials correspondingly and we have generalized to an ar-
bitrary magnetic field direction, which is why the coeffi-
cient Γ ∝ B has become a vector. The chiral potential
V5 may arise, for example, in a situation when the inver-
sion symmetry is broken, in which case the Weyl nodes
of different chirality will generally be located at differ-
ent energies, V5 being precisely this energy difference.
Otherwise this should simply be regarded as a fictitious
potential, which couples linearly to the chiral charge nc.
Indeed, Fourier transforming Eq. (59) we obtain
7
(cid:19)
.
(60)
(cid:19)
(cid:18) n0
n5
= −g(cid:2)iΩτ + D−1(q, Ω)(cid:3)(cid:18) V0
(cid:19)
(cid:18) V0
V5
= −g[iΩτD(q, Ω) + 1]
,
(61)
V5
D−1(q, Ω)
This gives(cid:18) n0
(cid:19)
n5
which is equivalent to Eq. (50).
Solving Eq. (59) in the steady state, assuming a uni-
form sample of linear size L, attached to normal metal
leads (in which the chiral electrochemical potential n5 +
gV5 = 0) in the z-direction (i.e. the current flows along
the magnetic field), one obtains the following expression
for the scale-dependent sample conductance27,36
G(L) =
e2Nφ
2π
F (L/La, L/Lc),
(62)
where the scaling function F (x, y) is given by
(cid:112)1 + y2/x2 + tanh
(1 + y2/x2)3/2
(cid:112)1 + y2/x2
(cid:16) x
2
(cid:17) . (63)
F (x, y) =
y2
2x
This scaling function exhibits crossover behaviors which
exactly match the corresponding crossovers
in the
wavevector dependence of the diffusion modes, described
in Section II.
Indeed, when x (cid:28) y, which means La (cid:29) Lc, we have
F (x, y) ≈ 2/x, which gives
G(L) ≈ e2gDL = σL,
(64)
which is simply the standard Ohmic conductance, with a
small magnetic-field dependent correction, which goes as
(Lc/La)2, and which we have ignored here for the sake
of brevity.27 This corresponds to the regime, in which we
have two independent diffusion modes, given by Eq. (58),
corresponding to independent diffusion of the electric and
the chiral charges.
On the other hand, when La (cid:28) Lc, or x (cid:29) y, we
obtain
F (x, y) ≈
1
y2/2x + tanh(x/2)
.
(65)
This exhibits a regime of quasiballistic conductance with
G(L) ≈ e2Nφ
2π
,
which is realized when
La < L < L∗.
(66)
(67)
This corresponds precisely to the range of the wavevec-
tors q in Eq. (56), for which propagating modes exist
when La (cid:28) Lc. Thus, one of the observable manifesta-
tions of the existence of quasi-1D propagating modes in a
TM is the quasiballistic conductance, given by Eq. (66).
It is instructive to see what the quasiballistic con-
ductance regime corresponds to directly in terms of the
transport equations Eq. (59). In this regime both the sec-
ond derivative D∇2n0,5 and the relaxation n5/τc terms
may be ignored and we obtain
∂n0
∂t
∂n5
∂t
= Γ
= Γ
∂n5
∂z
∂n0
∂z
,
.
(68)
Introducing the left- and right-handed charges as nR,L =
(n0 ± n5)/2 we obtain
∂nR
∂t
∂nL
∂t
,
∂nR
= Γ
∂z
= −Γ
∂nL
∂z
.
(69)
Eq. (69) describes two chiral bosonic density modes,
which propagate along and opposite to the direction of
the applied magnetic field. Such "bosonization" of the
electron dynamics, which occurs in a 3D metal in a weak
quasiclassical magnetic field, is a characteristic smoking-
gun feature of a TM.
Eq. (69) means, in particular, that a density distur-
bance, created in a TM in magnetic field, with split into
two chiral modes, which will propagate ballistically in
opposite directions, spatially separating electrons of dif-
ferent chirality. It might be possible to detect this effect
optically.37
B. Optical conductivity
Optical conductivity of TM has been studied before,
with a focus mostly on the interband transition ef-
fects.38 -- 42 Here we will demonstrate that low-frequency
intraband optical conductivity is qualitatively affected by
the chiral anomaly, which has not been noticed before.
From the general expression for the density response
function Eq. (40) we may easily obtain the frequency-
dependent conductivity. Indeed, electric charge conser-
vation requires that
σzz(Ω) = −e2 lim
q→0
iΩ
q2 χ00(q, Ω).
(70)
A straightforward calculation then gives
σzz(Ω) =
σ
1 − iΩτ
1 − iΩτc + (Lc/La)2
1 − iΩτc
,
(71)
where σ = e2gD is the zero-field DC conductivity. Eval-
uating the real part, one obtains
(cid:34)
(cid:18) Lc
(cid:19)2 1 − Ω2τ τc
La
1 + Ω2τ 2
c
(cid:35)
Re σzz(Ω) =
σ
1 + Ω2τ 2
1 +
. (72)
In this paper we have studied density response in TM
and the corresponding experimentally observable phe-
nomena. We have argued that one of the truly unique
8
FIG. 2. (Color online) Frequency-dependent conductivity for
Lc/La = 1 (solid line) and Lc/La = 0 (dashed line), and
τ /τc = 0.04.
(cid:90) ∞
0
Eq. (72) is one of the main new results of this paper.
The prefactor in Eq. (72) is the standard Drude expres-
sion for the optical conductivity of a metal. The part
in the square brackets is a correction that arises in a
TM as a consequence of the chiral anomaly. This correc-
tion represents transfer of the spectral weight from high
frequencies into a new low-frequency peak, whose width
scales with the chiral charge relaxation rate 1/τc, while
height is proportional to the ratio (Lc/La)2. Importantly,
Eq. (72) satisfies the exact f -sum rule
dΩ Re σzz(Ω) =
πσ
2τ
,
(73)
which means that the appearance of the new low-
frequency peak indeed represents spectral weight trans-
fer, as it should, see Fig. 2.
It is instructive to examine the high-frequency limit of
τ τc. In this limit
√
Eq. (72), namely when Ω > 1/τc, 1/
we obtain
Re σzz(Ω) ≈
σ
1 + Ω2τ 2
1 − 1
3
.
(74)
(cid:34)
(cid:19)2(cid:35)
(cid:18) (cid:96)
La
The negative second term in the square brackets ex-
presses the reduction of the spectral weight at high fre-
quencies, induced by the chiral anomaly. We note that
while formally the whole expression may become negative
for La (cid:28) (cid:96), this would be outside of the regime of validity
of our theory, which assumes weak magnetic field regime
kF (cid:96)B (cid:29) 1 and thus La (cid:29) (cid:96). Within this regime, the real
part of the optical conductivity is always positive, as it
should be.
IV. DISCUSSION AND CONCLUSIONS
0.51.01.52.0Ωτ0.51.01.52.0Reσzz(Ω)/σ 9
features of TM is the existence of propagating density
modes, which are induced by the combined effect of the
chiral anomaly and impurity scattering. The modes exist
only in the diffusive limit and disappear in the ballistic
regime. We have demonstrated that one of the observ-
able manifestations of the existence of such propagating
modes is the highly nontrivial scaling of the conductance
of a TM with the sample size, first pointed out by Altland
and Bagrets.36 We have also demonstrated an entirely
new phenomenon, namely a nontrivial frequency depen-
dence of the optical conductivity, which exhibits trans-
fer of the spectral weight from high frequencies, greater
than 1/
τ τc, into a new non-Drude low-frequency peak
of width 1/τc. The existence of this new narrow peak in
the optical conductivity is a smoking-gun consequence of
the chiral anomaly in TM.
√
One issue we have not touched upon in this pa-
per is the effect of the electron-electron, in particular
long-range Coulomb,
interactions. One might worry
that the Coulomb interactions could push the linearly-
dispersing sound-like mode Eq. (55) to the plasma fre-
quency, as happens in the case of the ordinary elec-
tronic zero sound mode, if short-range interactions are
replaced by Coulomb interactions. This does not happen
in our case, however, since the existence of the sound-
like mode has nothing to do with the electron-electron
interactions. Its physical origin lies in the effective "one-
dimensionalization" of the electron dynamics in a dirty
TM in the presence of even a weak magnetic field. What
this means is that the LLL dominates the density re-
sponse at long times and long distances even when many
higher Landau levels are occupied since the dynamics is
ballistic in the LLL while it is diffusive in the higher
Landau levels. This picture has nothing to do with
the electron-electron interactions and will not be signifi-
cantly modified by them, just as the ordinary low-energy
particle-hole continuum in a clean Fermi liquid is not sig-
nificantly affected by the interactions. The frequency of
e2t2g is not significantly af-
fected by a weak applied magnetic field43,44 and is much
larger than the frequency of the low-energy chiral den-
sity mode Ω0 = Γq, which arises within the low-energy
particle-hole continuum of the clean metal. This means
that the two modes do not interact with each other in
any significant way. However, the issue of collective plas-
mon modes in a dirty TM is interesting in its own right
and will be addressed in a future publication.
the plasmon modes ΩP ∼(cid:112)
ACKNOWLEDGMENTS
We thank Xi Dai for a useful discussion. Financial sup-
port was provided by Natural Sciences and Engineering
Research Council (NSERC) of Canada.
1 N. P. Armitage, E. J. Mele,
and A. Vishwanath, Rev.
(2014).
Mod. Phys. 90, 015001 (2018).
2 M. Z. Hasan, S.-Y. Xu, I. Belopolski, and S.-M. Huang,
Annual Review of Condensed Matter Physics 8 (2017).
3 B. Yan and C. Felser, Annual Review of Condensed Matter
Physics 8 (2017).
4 A. A. Burkov, Annual Review of Condensed Matter
Physics 9, 359 (2018).
5 X. Wan, A. M. Turner, A. Vishwanath,
Savrasov, Phys. Rev. B 83, 205101 (2011).
and S. Y.
6 A. A. Burkov and L. Balents, Phys. Rev. Lett. 107, 127205
(2011).
7 A. A. Burkov, M. D. Hook, and L. Balents, Phys. Rev. B
84, 235126 (2011).
8 G. Xu, H. Weng, Z. Wang, X. Dai, and Z. Fang, Phys.
Rev. Lett. 107, 186806 (2011).
9 S. M. Young, S. Zaheer, J. C. Y. Teo, C. L. Kane, E. J.
Mele, and A. M. Rappe, Phys. Rev. Lett. 108, 140405
(2012).
10 Z. Wang, Y. Sun, X.-Q. Chen, C. Franchini, G. Xu,
H. Weng, X. Dai, and Z. Fang, Phys. Rev. B 85, 195320
(2012).
11 Z. Wang, H. Weng, Q. Wu, X. Dai, and Z. Fang, Phys.
Rev. B 88, 125427 (2013).
12 Z. K. Liu, B. Zhou, Y. Zhang, Z. J. Wang, H. M. Weng,
D. Prabhakaran, S.-K. Mo, Z. X. Shen, Z. Fang, X. Dai,
Z. Hussain, and Y. L. Chen, Science 343, 864 (2014).
13 M. Neupane, S.-Y. Xu, R. Sankar, N. Alidoust, G. Bian,
C. Liu, I. Belopolski, T.-R. Chang, H.-T. Jeng, H. Lin,
A. Bansil, F. Chou, and M. Z. Hasan, Nat. Commun. 5
14 S.-Y. Xu, I. Belopolski, N. Alidoust, M. Neupane, G. Bian,
C. Zhang, R. Sankar, G. Chang, Z. Yuan, C.-C. Lee, S.-
M. Huang, H. Zheng, J. Ma, D. S. Sanchez, B. Wang,
A. Bansil, F. Chou, P. P. Shibayev, H. Lin, S. Jia, and
M. Z. Hasan, Science 349, 613 (2015).
15 B. Q. Lv, N. Xu, H. M. Weng, J. Z. Ma, P. Richard, X. C.
Huang, L. X. Zhao, G. F. Chen, C. E. Matt, F. Bisti, V. N.
Strocov, J. Mesot, Z. Fang, X. Dai, T. Qian, M. Shi, and
H. Ding, Nat Phys 11, 724 (2015).
16 B. Q. Lv, H. M. Weng, B. B. Fu, X. P. Wang, H. Miao,
J. Ma, P. Richard, X. C. Huang, L. X. Zhao, G. F. Chen,
Z. Fang, X. Dai, T. Qian, and H. Ding, Phys. Rev. X 5,
031013 (2015).
17 L. Lu, Z. Wang, D. Ye, L. Ran, L. Fu, J. D. Joannopoulos,
and M. Soljaci´c, Science 349, 622 (2015).
18 E. Liu, Y. Sun, L. Muechler, A. Sun, L. Jiao, J. Kroder,
V. Suss, H. Borrmann, W. Wang, W. Schnelle, S. Wirth,
S. T. B. Goennenwein,
and C. Felser, ArXiv e-prints
(2017), arXiv:1712.06722 [cond-mat.mtrl-sci].
19 G. Volovik, The Universe in a Helium Droplet (Oxford:
Clarendon, 2003).
20 F. D. M. Haldane, Phys. Rev. Lett. 93, 206602 (2004).
21 G. E. Volovik, in Quantum Analogues: From Phase Tran-
sitions to Black Holes and Cosmology, Lecture Notes in
Physics, Vol. 718, edited by W. Unruh and R. Schtzhold
(Springer Berlin Heidelberg, 2007).
22 S. Murakami, New Journal of Physics 9, 356 (2007).
23 A. A. Zyuzin and A. A. Burkov, Phys. Rev. B 86, 115133
(2012).
24 H. Nielsen and M. Ninomiya, Physics Letters B 130, 389
(1983).
and N. P. Ong, Phys. Rev. X 8, 031002 (2018).
36 A. Altland and D. Bagrets, Phys. Rev. B 93, 075113
25 D. T. Son and B. Z. Spivak, Phys. Rev. B 88, 104412
(2016).
10
(2013).
26 A. A. Burkov, Phys. Rev. B 91, 245157 (2015).
27 A. A. Burkov, Phys. Rev. B 96, 041110 (2017).
28 S. Nandy, G. Sharma, A. Taraphder, and S. Tewari, Phys.
Rev. Lett. 119, 176804 (2017).
29 A. A. Burkov, Phys. Rev. Lett. 113, 187202 (2014).
30 J. Xiong, S. K. Kushwaha, T. Liang, J. W. Krizan,
M. Hirschberger, W. Wang, R. J. Cava, and N. P. Ong,
Science 350, 413 (2015).
31 Q. Li, D. E. Kharzeev, C. Zhang, Y. Huang, I. Pletikosic,
A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D. Gu,
and T. Valla, Nat Phys 12, 550 (2016).
32 H. Li, H. Wang, H. He, J. Wang, and S.-Q. Shen, ArXiv
e-prints (2017), arXiv:1711.03671 [cond-mat.mes-hall].
33 N. Kumar, C. Felser,
and C. Shekhar, ArXiv e-prints
(2017), arXiv:1711.04133 [cond-mat.mes-hall].
34 Y. J. Wang, J. X. Gong, D. D. Liang, M. Ge, J. R. Wang,
(2018),
and C. J. Zhang, ArXiv e-prints
W. K. Zhu,
arXiv:1801.05929 [cond-mat.mtrl-sci].
35 S. Liang, J. Lin, S. Kushwaha, J. Xing, N. Ni, R. J. Cava,
37 Q. Ma, S.-Y. Xu, C.-K. Chan, C.-L. Zhang, G. Chang,
Y. Lin, W. Xie, T. Palacios, H. Lin, S. Jia, P. A. Lee,
P. Jarillo-Herrero, and N. Gedik, Nature Physics 13, 842
EP (2017).
38 C. J. Tabert and J. P. Carbotte, Phys. Rev. B 93, 085442
(2016).
39 S. Ahn, E. J. Mele, and H. Min, Phys. Rev. B 95, 161112
(2017).
40 B. Roy, V. Jurici´c, and S. Das Sarma, Scientific Reports
6, 32446 EP (2016).
41 Y. Sun and A.-M. Wang, Phys. Rev. B 96, 085147 (2017).
42 D. Neubauer, A. Yaresko, W. Li, A. Lohle, R. Hubner,
M. B. Schilling, C. Shekhar, C. Felser, M. Dressel, and
A. V. Pronin, ArXiv e-prints
(2018), arXiv:1803.09708
[cond-mat.mes-hall].
43 I. Panfilov, A. A. Burkov, and D. A. Pesin, Phys. Rev. B
89, 245103 (2014).
44 J. Zhou, H.-R. Chang, and D. Xiao, Phys. Rev. B 91,
035114 (2015).
|
1105.5209 | 2 | 1105 | 2011-10-17T06:07:41 | Gapless interface states between topological insulators with opposite Dirac velocities | [
"cond-mat.mes-hall"
] | The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the reflectance and transmittance. We find that they reflect the backscattering-free nature of the helical surface states. When the two velocities have opposite signs, both transmission and reflection are prohibited for normal incidence, when a mirror symmetry normal to the junction is preserved. In this case we show that there necessarily exist gapless states at the interface between the two topological insulators. Their existence is protected by mirror symmetry, and they have characteristic dispersions depending on the symmetry of the system. | cond-mat.mes-hall | cond-mat |
Gapless interface states between topological insulators with opposite Dirac velocities
Ryuji Takahashi1 and Shuichi Murakami1, 2
1Department of Physics, Tokyo Institute of Technology,
2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551, Japan
2PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
(Dated: November 14, 2018)
The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics
and its velocity depends on materials. We consider a junction of two topological insulators with
different velocities, and calculate the reflectance and transmittance. We find that they reflect the
backscattering-free nature of the helical surface states. When the two velocities have opposite signs,
both transmission and reflection are prohibited for normal incidence, when a mirror symmetry
normal to the junction is preserved. In this case we show that there necessarily exist gapless states
at the interface between the two topological insulators. Their existence is protected by mirror
symmetry, and they have characteristic dispersions depending on the symmetry of the system.
PACS numbers: 73.20.-r, 73.40.-c,73.43.-f,75.70.Tj
Recently physical phenomena originating from the
Dirac cones of electrons have been studied, in the context
of graphene sheet [1] or the topological insulator (TI) [2 --
5]. In a graphene sheet, novel transport phenomena are
predicted theoretically in p-n junction systems: for ex-
ample the Klein paradox [6], and the negative refraction
[7]. The TI in three dimensions (3D) [4, 5], such as Bi2Se3
[8, 9] and Bi2Te3 [10], has a single Dirac cone in its sur-
face states, as observed by angle-resolved photoemission
spectroscopy. Unlike graphene, the states on the Dirac
cone on the surface of the TI are spin filtered; they have
fixed spin directions for each wave number k. Because
the state at k and that at −k have the opposite spins,
the perfect backscattering from k to −k is forbidden.
Such linear dispersion is similar to photons. The ve-
locity of the Dirac cone on the surface of 3D TI depends
on materials. For example, the velocity for Bi2Te3 is
about 4 × 105m/s [10] depending on the direction of the
wave vector, and that for Bi2Se3 is approximately 5 × 105
m/s [8]. Therefore, when two different TIs are attached
together, the refraction phenomenon similar to optics is
expected at the junction.
In this Letter, we theoreti-
cally study the refraction of electrons at the junction be-
tween the surfaces of two TIs [Fig. 1(a)]. The resulting
transmittance and reflectance are different from optics,
reflecting prohibited perfect backscattering. In addition,
we show that when the velocities of the two TIs have op-
posite signs, neither refraction nor reflection is allowed for
the incident electron normal to the junction. In this case,
we can show that there necessarily exist gapless interface
states between the two TIs and the incident surface elec-
trons totally go into the interface states. As long as the
mirror symmetry with respect to the yz plane Myz is
preserved, the interface gapless states exist. These gap-
less states are formed at the interface between the same
Z2 nontrivial materials. As a result, these interface states
do not come from the Z2 topological number, but come
from the mirror Chern number[11], and are protected by
the mirror symmetry Myz.
The effective Dirac Hamiltonian of the surface states
on the xz plane is represented as
H = −iv[σx∂z − σy∂x],
(1)
where σx, σy are the Pauli matrices, and v is the Fermi
velocity. From the Hamiltonian one can obtain the
linear energy E = svk where k = k, and s = +1(−1)
corresponds to the upper (lower) cone, provided v > 0.
We consider a refraction problem between the two TIs,
which we call TI1 and TI2, with the incidence angle θ,
the transmission angle θ′, and the reflection angle θR
[Fig. 1(a)]. As in optics, the momentum conservation
requires θR = θ, and the wave functions are written as
ψI (x, z) = 1√2
eik(x sin θ+z cos θ)(1, e−iθ)t, ψT (x, z) =
1√2
=
1√2
are
the wave numbers on TI1 and TI2, respectively, and we
consider the Fermi energy EF > 0 (i.e above the Dirac
point), giving s = +1 for both of the TIs. Let v1 and v2
denote the velocities of the two TIs.
eik′(x sin θ ′+z cos θ ′)(1, e−iθ ′
eik(x sin θ−z cos θ)(1, −eiθ)t, where
and k′
ψR(x, z)
)t,
k
2
1
sin θ = v−1
We first assume v1 and v2 to be positive. The con-
servation of the momentum and the energy yields Snell's
law: k′ sin θ′ = k sin θ, v−1
sin θ′. Let r and
t denote the amplitude of the reflected and transmitted
wave, compared with the incident wave. The current
conservation in the z direction is written as R + T = 1,
where R ≡ r2 and T ≡ v2 cos θ ′
v1 cos θ t2 are the reflectance
and the transmittance, respectively. We note that the
wavefunction should eventually be discontinuous at the
junction when the velocities are different, as has been
studied in the context of graphene [12, 13]. The reason
is the following. Therefore, the current conservation at
the interface requires v1zψ12 = v2zψ22, where v1,2 is
a velocity, and the subscripts 1 and 2 represent TI1 and
TI2, respectively. Because in our case v1z 6= v2z, we
have ψ12 6= ψ22 at the junction, and the continuity
2
FIG. 2:
(Color online) Transport at the junction between
the surfaces of two TIs, whose velocities have different signs.
(a) Linear dispersion at kx = 0. The incident wave (I) is
perpendicular to the junction. Both the transmission (T)
and reflection (R) are prohibited due to spin conservation.
(b) Normal incidence. TI1 (red) and TI2 (blue) have the
velocities of opposite signs. The purple region represents the
interface.
two TIs. These interface states arise from hybridization
between the two surface states from the two TIs. To show
the existence of gapless interface states, we first write
down the effective Hamiltonian at the interface from the
two Dirac cones with hybridization:
H = (cid:18)H1 V
V † H2(cid:19) .
(3)
FIG. 1: (Color online) (a) Schematic of the refraction of the
surface states at the junction between the two TIs, TI1 and
TI2. (b)(c): Reflectance (red) and transmittance (blue) for
the ratios of the velocities of the two TIs: (b)v2/v1 = 0.6
and (c)v2/v1 = 1.4. The solid curves are the results for the
junction between two TIs, while the dotted curves show the
results for optics with p and s polarizations.
of the wavefunction is violated. The proper way is to
set the Hamiltonian to be Hermitian also at the bound-
Here H1(2) is the effective surface Hamiltonian for the
surface of TI1 (TI2) at the interface:
ary, i.e. H = −i(cid:2) 1
where v(z) is the velocity dependent on z. The resulting
coefficients are
2 [v(z)σx∂z + σx∂zv(z)] − v(z)σy∂x(cid:3) ,
r = i
sin θ ′−θ
cos θ+θ ′
2
2
e−iθ,
t = r v1
v2
cos θ
cos θ+θ ′
2
ei θ′
−θ
2
.
(2)
They satisfy the current conservation. The results are
plotted as the solid curves in Figs. 1(b)(c). The dotted
curves represent corresponding results for optics. Unlike
optics, for normal incidence (θ = 0), the perfect transmis-
sion (T = 1, R = 0) occurs, which reflects the prohibited
backscattering on the surface of the TI. This is similar
to graphene [6, 12, 13] but the transmittance in our case
monotonically decreases with the incidence angle.
Next, we consider the case where the velocities of the
two TIs have opposite signs, where we can no longer use
the above approach. One might think that it is similar to
the negative refraction in optics [14, 15], but it is not true
because the Fermi energy is above the Dirac point for the
two TIs. Furthermore, both reflection and transmission
are prohibited for normal incidence, because the incident
wave has no way to conserve its momentum kx along the
interface and spin simultaneously (see Fig. 2). Thus it is
a paradox what happens for normal incidence.
Our answer to this question is that gapless states exist
at the interface between the two TIs (the purple region
in Fig. 2(b)). The normally incident wave goes along the
surface of one TI, then into the interface between the
H1 = v1(σ × k)z, H2 = −v2(σ × k)z
(4)
and V is the hybridization at the interface. For simplic-
ity, we retain only the lowest order in k. In the expression
of H2, there is an extra minus sign; on the surface of TI2
in Fig. 2, the mode going in the +z direction evolves
from that going in the −y direction, whereby the extra
sign necessarily appears.
We explain the reason for justifying our model
in
Eqs. (3), (4). For simplicity we assumed that the surface
states on the xz surface for TI1 and TI2 are described
by the Dirac cone. Generic surface states with non-Dirac
types are covered in the later discussion using the mirror
Chern number[11]. We used here the fact that the Dirac
velocities for each TI have the same signs for the xy and
xz surfaces. It is because the signs of the Dirac veloci-
ties are determined by the mirror Chern number which
is the bulk quantity [11]. We also set the Dirac cones to
be isotropic for simplicity; the following results turn out
to be unaltered by anisotropy in the Dirac cones. We
henceforth impose the mirror symmetry with respect to
the yz plane Myz, because this symmetry preserved by
H1 and H2 sets the spins parallel to the x axis for the nor-
mally (kz) incident wave. By imposing this mirror sym-
metry Myz and time-reversal symmetry, V is expressed
as V = (cid:18) g ih
ih g(cid:19) , where g and h are real constants repre-
senting the hybridization between the two surface states.
3
rotational symmetry around the z axis, and is lifted when
it is broken by adding higher order terms in k, e.g. the
warping term in Bi2Se3 [16]. As seen in Fig. 3(b), the
dispersion becomes a collection of Dirac cones. There-
fore, for this example Hamiltonian, we could show that
there are gapless states at the interface when the system
has the mirror symmetry Myz.
We note that this method is generic, because the anal-
ysis is based only on the symmetry. The only assumption
is that the gapless point is near k = 0, and we can expand
the Hamiltonian in terms of k. To complement this argu-
ment, we show the existence of gapless interface states on
generic grounds. Because these gapless states are gener-
ated between two TIs with the same Z2 topological num-
bers, they are not protected in the same sense as the
surface states of three-dimensional TIs. In the following
we show that these gapless interface states are protected
by the mirror symmetry and the time-reversal symme-
try. Each TI with mirror symmetry is characterized by
the mirror Chern number [11]. When the system has the
mirror symmetry Myz, the surface modes are labeled
with the mirror eigenvalues M = ±i at kx = 0, corre-
sponding to the spin along −x and +x, respectively. The
mirror Chern number is obtained as nM = (n+i − n−i)/2
where n±i are the Chern numbers [17, 18] for the sub-
space of states with mirror eigenvalues M = ±i. We
have n+i = −n−i by the time-reversal symmetry. In our
case where the two surface Dirac cones have opposite ve-
locities, the mirror Chern numbers for the two TIs are
different. TI1 has n(1)
−i = +1,
M
and TI2 has n(2)
−i = −1 at kx = 0
M
plane. For the M = +i (Sx < 0) subspace, this corre-
sponds to the junction of two systems with Chern num-
bers n(1)
+i = −2,
it gives rise to two left-going chiral modes in the y di-
rection. On the other hand, for M = −i it also gives
two right-going chiral modes in the y direction. These
modes are schematically shown in Fig. 3(d). Therefore
it is natural to generate the two Dirac cones in the junc-
tion. Thus these gapless states are protected by the mir-
ror symmetry. If the mirror symmetry is not preserved,
the gapless states do not exist in general. This discussion
is generic, and is complementary to our discussion by the
surface Dirac Hamiltonian. Therefore, we conclude that
the gapless interface states exist for the generic cases with
mirror symmetry, even with e.g. lattice mismatch at the
interface. In real materials, mirror symmetry may be lost
by disorder in principle; nevertheless, if the the sample is
relatively clean, the gapless interface states are expected
to survive and can be measured experimentally.
+i = +1; because n(1)
+i = −1 and n(2)
+i = −1, n(1)
+i = +1, n(2)
= −1, i.e. n(1)
= 1, i.e. n(2)
+i − n(2)
The distance between the Dirac cones of the gapless
interface states are proportional to the magnitude of the
hybridization between the two TIs at the interface. When
the hybridization becomes as strong as the bandwidth,
the spacing between the interface Dirac cones is of the
FIG. 3: (Color online) (a)(b) Dispersion on the interface be-
tween the two TIs in Eq. (5) with velocities v1 = 1, v2 = −2.
In (a), the hybridization is g = 2, h = 1. There are two
Dirac points (kx, ky) = (0, ±p5/2) where the gap closes. In
(b), the hybridization is g = 2, h = 0 and the warping term
λ(k3
−)σz with λ = 0.4 added to H1 and H2. There ap-
pear six Dirac cones. (c) Illustration of the interface mode.
The surface current goes into the interface. (d) Schematic of
the dispersion of interface states on kx = 0.
+ + k3
From the Hamiltonian [Eq. (3)], the eigenvalues are cal-
culated as
E = ±r∆k ±q∆2
k − η, ∆k = g2 + h2 +
1 + v2
v2
2
2
k2,(5)
(6)
η = v2
1v2
2k4 + ∆2
0 − 2v1v2k2(h2 cos 2α − g2),
where we set kx+iky = keiα, and α is real. The condition
for existence of gapless interface states is
v2
1v2
2k4 − 2v1v2k2(h2 cos 2α − g2) + (g2 + h2)2 = 0. (7)
To solve this equation, we note that g is nonzero, whereas
h can become zero when additional symmetries such as
rotational symmetry with respect to the z axis are im-
posed. Then we can see that for v1v2 > 0 (the two veloc-
ities with the same signs), the interface states are gapped
by the hybridization.
Only when two velocities have opposite signs (v1v2 <
0), are there gapless states on the interface. Disper-
sion of the gapless states depends on whether h 6= 0
or h = 0. When h 6= 0, the solutions are (kx, ky) =
(cid:16)0, ±p(g2 + h2)/v1v2(cid:17) and there are gapless states on
the interface. The interface states have two Dirac cones
(Fig. 3 (a)). On the other hand, when h = 0 due to
rotational symmetry with respect to the z axis, the gap
closing points form a circle k2
. This de-
generacy on the circle in k space is due to the continuous
y = g2
v1v2
x + k2
order of inverse of the lattice spacing. In that case the
transport properties will be like the graphene, having
two Dirac cones at K and K' points. We note that in
graphene there are spin-degenerate Dirac cones, whereas
in the present case the interface Dirac cones are not spin
degenerate. From Fig. 3(d), when the wave number k
goes around one of the Dirac point, the spin direction
also rotates around the z axis (normal to the interface).
In the similar way as in graphene, one can consider the
valley degree of freedom as a pseudospin, and develop val-
leytronics [19, 20] similar to graphene. These interface
states can be measured via transport; for this purpose
one should suppress the surface transport by attaching
ferromagnets on the surface.
From the spin-resolved angle-resolved photoemission
spectra, all the TIs observed so far, such as Bi1−xSbx [21,
22], Bi2Se3[9], and Bi2Te3[9], have nM = −1. To realize
the protected interface states in experiments discussed in
this Letter, one needs to find a TI with nM = +1, i.e., the
surface Dirac cone with negative velocity, and the spins
on the upper cone is in the counterclockwise direction in
the k space. It is an interesting issue to search for such
TIs. The Dirac velocity v is nothing but the coefficient
λ in the Rashba spin-splitting term λ(σ × k)z in the
Hamiltonian. The Rashba coefficient λ originates from
an integral of a sharply peaked function near the nuclei,
which rapidly varies between positive and negative values
[23, 24]. Therefore, we expect that it can change sign in
principle. The sign of the mirror Chern number nM is
also related with the mirror chirality of the bulk Dirac
Hamiltonian describing the bands near the bulk gap [11].
Because the mirror chirality governs the sign of the g-
factor which can be negative or positive as a result of the
spin-orbit coupling, one may well expect that in some
materials nM can become +1.
In conclusion, we study refraction phenomena on the
junction between the two TI surfaces with different veloc-
ities. The resulting reflectance and transmittance reflect
the backscattering-free nature of the surface states of TIs.
When the velocities of the TI surface states for the two
TIs have different signs, we show that the gapless states
appear on the interface. The existence of the gapless
states is shown by using the mirror Chern number, and
thus is topologically protected by the mirror symmetry.
4
The authors are grateful to T. Oguchi for discus-
sions. This research is supported in part by Grant-in-
Aid for Scientific Research (No. 21000004 and 22540327)
from the MEXT, Japan and by Kurata Grant from Ku-
rata Memorial Hitachi Science and Technology Founda-
tion. R.T also acknowledges the financial support from
the Global Center of Excellence Program by MEXT,
Japan through the "Nanoscience and Quantum Physics"
Project of Tokyo Institute of Technology.
[1] K. S. Novoselov et al., Science 306, 666 (2004).
[2] C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801
(2005); ibid. 95, 146802 (2005).
[3] B. A. Bernevig and S.-C. Zhang, Phys. Rev. Lett. 96
(2006) 106802.
[4] L. Fu, C. L. Kane and E. J. Mele, Phys. Rev. Lett.
98,106803(2007).
[5] J. E. Moore and L. Balents, Phys. Rev. B 75, 121306(R)
(2007).
[6] M. I. Katsnelson et al., Nature Physics 2, 620 - 625
(2006).
[7] V. V. Cheianov et al., Science 315, 1252 (2007).
[8] Y. Xia et al., Nature Phys. 5, 398 (2009).
[9] D. Hsieh et al., Nature (London) 460, 1101 (2009).
[10] Y. L. Chen et al., Science 325, 178 (2009).
[11] J. C. Y. Teo, L. Fu, C. L. Kane, Phys. Rev. B 78, 045426
(2008).
[12] A. Raoux, M. Polini, R. Asgari, A. R. Hamilton, R. Fazio,
and A. H. MacDonald, Phys. Rev. B81, 073407 (2010)
[13] A. Concha and Z. Tesanovi´c Phys. Rev. B82, 033413
(2010)
[14] V. G. Veselago, Sov. Phys. Usp. 10, 509 (1968).
[15] J. B. Pendry, Phys. Rev. Lett. 85, 3966 (2000).
[16] L. Fu, Phys. Rev. Lett. 103, 266801 (2009)
[17] D. J. Thouless, M. Kohmoto, M. P. Nightingale, and M.
den Nijs, Phys. Rev. Lett. 49, 405 (1982).
[18] M. Kohmoto, Ann. Phys. N.Y. 160, 343 (1985).
[19] O. Gunawan et al., Phys. Rev. Lett. 97, 186404 (2006).
[20] D. Xiao, W. Yao, and Q. Niu, Phys. Rev. Lett. 99, 236809
(2007).
[21] D. Hsieh et al., Science 323, 919 (2009).
[22] A. Nishide et al., Phys. Rev. B 81, 041309(R) (2010).
[23] M. Nagano, A. Kodama, T. Shishidou and T. Oguchi, J.
Phys.: Conden. Matter 21, 064239 (2009).
[24] G. Bihlmayer et al., Surf. Sci. 600, 3888 (2006).
|
1608.06436 | 1 | 1608 | 2016-08-23T09:33:38 | Dynamic dependence to domain wall propagation through artificial spin ice | [
"cond-mat.mes-hall"
] | Domain wall propagation dynamics have been studied in nanostructured artificial kagome spin ice structures. A stripline circuit has been used to provide localised pulsed magnetic fields within the artificial spin ice structure. This provides control of the system through electrically assisted domain wall nucleation events. Synchronisation of the pulsed fields with additional global magnetic fields and the use of a focussed magneto-optical Kerr effect magnetometer allows our experiments to probe the domain wall transit through an extended ASI structure. We find that the propagation distance depends on the driving field revealing field driven properties of domain walls below their intrinsic nucleation field. | cond-mat.mes-hall | cond-mat | a
Dynamic dependence to domain wall propagation through artificial spin ice
Department of Physics, Imperial College London, London SW7 2BZ, United Kingdom
D.M. Burn, M. Chadha, and W.R. Branford
(Dated: November 10, 2018)
Domain wall propagation dynamics have been studied in nanostructured artificial kagome spin
ice structures. A stripline circuit has been used to provide localised pulsed magnetic fields within
the artificial spin ice structure. This provides control of the system through electrically assisted
domain wall nucleation events. Synchronisation of the pulsed fields with additional global magnetic
fields and the use of a focussed magneto-optical Kerr effect magnetometer allows our experiments
to probe the domain wall transit through an extended ASI structure. We find that the propagation
distance depends on the driving field revealing field driven properties of domain walls below their
intrinsic nucleation field.
Magnetic meta-materials such as artificial spin ice
show behaviour arising from complex geometrical struc-
turing in addition to the original material properties.1,2
In these systems it is the combination of magnetic charge
interactions and topological constraints determine the
magnetisation behaviour of the system. Artificial spin
ice structures consisting of arrays of magnetic nano-
bars provide a 2D analogue to explore frustrated mag-
netic phenomena.3,4 These systems are of fundamen-
tal scientific interest5 -- 12 and have even been identified
as potentials for novel neural network or processing
technologies.3,13,14
Magnetisation reversal in artificial spin ice structures
composed of interconnected magnetic bars can be de-
scribed by an ensemble of magnetic domain wall (DW)
processes. The creation, annihilation and propagation
of these DWs throughout the system leads to magneti-
sation reversal within the bars as well as the transport
of both magnetic and topological charges throughout the
system. The conservation of both magnetic and topo-
logical charge provides constraints on the creation and
annihilation of DWs in the system. This reveals the
physical significance of the finer details of the micromag-
netic DW structure such as its chirality or topological
makeup when the DW interacts with a complex magnetic
structure.8,9,15 -- 19
The majority of our understanding of the magnetisa-
tion behaviour in artificial spin ice systems is based on ex-
periments combining thermal and quasi-static magnetic
fields applied to the entire system.10,12,20 -- 22 The role of
DWs have been typically investigated based on their nat-
ural occurrence,23 when an applied field exceeds the nu-
cleation field which is typically lower at the edges of the
structures. This approach is therefore limited in that we
can only investigate the internal behaviour of the system
once a process related to the edge of the system takes
place.
In this investigation the localised injection of DWs
along the length of a lithographically patterned mi-
crostrip is employed.24,25 Here the pulsed field DW in-
jection technique allows control over the DW nucleation
location within the system leading to significant experi-
mental advantages as the DW nucleation process can be
separated from a global applied field. Firstly, this allows
the behaviour of DWs in the system to be investigated
in a wider field range, even at lower fields than their nu-
cleation field. Secondly, this allows the magnetisation
dynamics in the system to be explored. This is of great
interest in the artificial spin ice system and understand-
ing of the behaviour in a dynamic context is necessary
for any future technological applications.
Our understanding of the propagation path of a DW
through a series of vertex structures can be explained
through topological considerations. Figure 1 shows a
two-vertex section of an artificial spin ice structure with
arrows representing the magnetisation orientation in each
bar and with topological defects pinned to the edges of
the structure associated with both the DWs and the ver-
tices.
Figure 1 shows the evolution of a down-chirality DW
incident upon a vertex with initial magnetisation sat-
urated to the left. During the interaction the −1/2
topological defect initially belonging to the DW becomes
pinned on the upper edge of the vertex. The +1/2 from
the DW follows the edge of the structuring and pairs with
the −1/2 initially associated with the vertex. This new
defect pair corresponds to a DW which is able propagate
along the lower branch at the vertex. The similar +ve
magnetic charges of the initial DW and the vertex pro-
vide a repulsive force which means there is an energy bar-
rier associated with this process which can be overcome
through the application of an applied magnetic field.
In figure 1(b) the -ve charge of the second vertex now
provides an attractive force on the positively charged
DW. Here the topological charges on the lower side of
the nanobar are opposite and therefore unwind when they
FIG. 1. Simple model of DW progation and annihilation
based on topological constraints in multiple vertices.
meet. The DW annihilates resulting in the two-in one-out
state illustrated in figure 1(c) where just a −1/2 topo-
logical defect from the incident DW now remains pinned
at the vertex. In this model, the DW no longer exists in
the system.
Figure 1(d) shows how a new DW can be injected into
the lower horizontal nanobar based on the state shown
in figure 1(c). The lower edge of the vertex contains zero
topological charge which is separated to form two defects
of +1/2 and −1/2 respectively. The +1/2 forms a pair
with the pre-existing −1/2 defect on the upper edge of
the vertex and represents a DW which can propagate
along the nanobar whilst the remaining −1/2 defect re-
mains at the lower edge of the vertex. This process in-
volves the separation of two opposite magnetic charges
which gives rise to an energy barrier which needs to be
overcome to complete this process.
The series of interactions illustrated in figure 1 shows
how an initial DW with down-chirality can interact with
two verticies in an artificial spin ice structure resulting
in a down-chirality DW in a subsequent nanobar with
similar geometry. The repeat of this process is consis-
tent with reversal events following from one another. A
similar series of interactions would also take place for
up-chirality DW which would propagate along the upper
branch at the first vertex. This would be followed by an
equivalent annihilation event at the second vertex and
the availability to nucleate a further up-chirality DW in
the final horizontal nanobar. In all cases, a sizable mag-
netic field is required to supply the energy to overcome
the energy barriers associated with moving like charges
towards one another, and separating zero charge into a
positive and negative charge pair.
This current understanding is based on the system
which maintains a minimum energy micromagnetic spin
configuration.
In this quasi-static regime energy must
be supplied to overcome energy barriers associated with
the transitions which nucleate the DW in new nanobars
throughout the system.
In this work we consider the
higher energy processes involved with dynamic propagat-
ing DWs and show deviations from our understanding of
these processes in the quasi-static regime.
By varying the bias field that drives DW motion we
investigate the importance of DW dynamics during prop-
agation through an artificial spin ice structure with fields
applied along the armchair geometry. Combining lo-
calised DW injection with a MOKE measurements with a
localised magnetisation probe we also infer on the length-
scales of propagation through the system at these fields.
Critically, our experiments probe the DW propagation
behaviour in fields below the intrinsic DW nucleation
field for these structures.
Artificial spin ice structures consisting of intercon-
nected NiFe nanowires were fabricated in a kagome geom-
etry using electron-beam lithography and thermal evapo-
ration. The bars were 700 nm x 150 nm in dimension and
were 10 nm thick. Further details about the patterning
of the magnetic structures can be found elsewhere26. A
2
2 µm wide Cr(5 nm)/Au(50 nm) microstrip was added
in a second lithographic process and is shown in figure 2
along with the simulated field profile expected from the
microstrip.27
The magnetisation reversal in the system was investi-
gated using magneto-optical Kerr effect (MOKE) magne-
tometry in the longitudinal geometry. Here, a focussed
laser spot with a ∼ 10 µm elongated footprint provided
a localised probe of the magnetisation reversal as illus-
trated in figure 2. The combination of quasi-static and
pulsed magnetic fields, supplied from external coils and
from the microstrip respectively, were used to drive the
magnetisation reversal in the sample. The Kerr signal
was averaged over 50 field cycles in each measurement.
By introducing a 5◦ angular offset between ASI struc-
turing and the applied field direction the magnetisation
reversal associated with DW nucleation events and DW
propagation through the system can be distinguished by
the reversal field.26 Additionally, by varying the contri-
bution from the quasi-static and pulsed fields, behaviour
from quasi-static energy dependent magnetisation re-
versal processes and time-dependent magnetisation pro-
cesses have been investigated.24,28
Initially the magnetisation behaviour was investigated
with a 1 Hz sinusoidal quasi-static applied magnetic field
and is shown in figure 3(a). Two transitions in the mag-
netisation occur at two distinct and relatively sharp re-
versal fields despite averaging over 50 field cycles and over
multiple nanowires within the illuminated laser footprint.
The two steps indicate the combination of two reversal
processes occurring during the magnetisation reversal as-
sociated with the nucleation field of a DW from a vertex
and the field required for a pre-existing DW to propagate
through a vertex.26
By introducing additional pulsed magnetic fields, fig-
ures 3(b) and (c) show modified hysteresis loops where
the arrows indicate the triggering of the pulsed field
FIG. 2. Image of a interconnected array of nanowires with
a Au stripline for applying localised pulsed magnetic fields.
700 nm x 150 nm
within the quasi-static field cycle resulting in an increase
in the magnetisation. At this point, the combination of
pulsed and quasi-static fields locally overcome the rever-
sal field leading to the injection of magnetic DWs at the
stripline. The additional pulsed field induced reversal
results in a reduced magnetisation reversal at the lower
quasi-static field and the higher field quasi-static reversal
remains unchanged.
The magnetisation reversal combines multiple rever-
sal processes which can be modelled as a summation of
tanh functions.29 The lines in figure 3 show a model fit
to the data where each transition is parameterised by a
reversal field, the relative change in magnetisation and a
parameter representing the shape of that transition. The
quasi-static reversal fields are symmetric with increasing
and decreasing field and share fitting parameters.
The shape of the hysteresis loop representing the in-
crease in magnetisation at the lower reversal field also
shows some broadening when a pulsed field is present.
This could represent a modified reversal field due to
a partially-reversed magnetisation state following the
pulse. This will be discussed in more detail later.
The pulsed-field induced magnetisation reversal de-
pends on both the pulsed field voltage and the trigger-
ing point within the quasi-static field cycle. Figure 4(a)
shows the minimum pulse voltage required to result in
the additional pulsed-field induced magnetisation rever-
sal steps in figure 3 (b and c). This is plotted as a
function of the quasi-static field at the point of pulsed
field triggering which can be considered as a static bias
field on the timescales of the pulsed field. The linear de-
crease represents the contributions to the total field at
the stripline where an increase in pulsed field amplitude
from a greater pulsed voltage allows magnetisation rever-
sal to take place at a lower quasi-static field. A linear fit
3
to this data provides a calibration of the stripline which
produces 10.8 ± 0.3 Oe/V. For quasi-static fields greater
than 122 Oe the magnetisation reversal is driven purely
by the quasi-static field. Therefore the effect of the pulsed
field in this field regime cannot be distinguished.
Figure 4(a) also compares the difference in behaviour
when the laser spot is positioned 0, 10 and 20 µm away
from the stripline. All the points fall on the same line
indicating the reversal process at the stripline is not af-
fected by the measurement position. However, when
measurements are performed with greater separation,
magnetisation reversal is only observed when the pulsed
field triggering occurs at larger quasi-static fields. This
feature allows us to probe the motion of the DWs through
an extended region of the ASI system.
For all measurement positions the combination of
pulsed and quasi-static fields still result in magnetisation
reversal at the stripline. This reversal is due to the lo-
caslied injection of magnetic DWs at the stripline which
propagate along the nanobars reversing the magnetisa-
tion near the stripline. At greater distances from the
stripline only the quasi-static field drives the DW propa-
gation and the magnetisation reversal represents the dy-
namic behaviour of DWs in fields below their nucleation
field.
Pulse lengths of 150 ns and 20 ns had little influence
on the DW injection process so the quasi-static bias field
dependence on DW propagation has been further investi-
gated with 20 ns long, 7.5 V pulses which are sufficient to
inject DWs when biased with a field greater than 108 Oe.
Figure 4(b) shows the pulsed-field-induced magnetisation
reversal contribution as a function of the quasi-static bias
field for various measurement positions. This is found
from the ratio in magnetisation change from the pulsed
and quasi-static fields in the hysteresis loops.
n
o
i
t
a
s
i
t
e
n
g
a
m
d
e
s
i
l
a
m
r
o
N
(a)
(b)
(c)
1
0
-1
1
0
-1
1
0
-1
-250
-200
-150
-100
0
-50
50
Applied field (Oe)
100
150
200
250
)
V
(
d
e
l
i
f
d
e
s
u
P
l
9
8
7
6
d
e
c
u
d
n
i
l
d
e
i
f
d
e
s
u
P
l
)
%
(
l
a
s
r
e
v
e
r
n
o
i
t
a
s
i
t
e
n
g
a
m
1.0
0.5
0.0
100
Distance to stripline
0 m
5 m
10 m
20 m
Distance to stripline
0 m
5 m
10 m
20 m
105
110
115
120
Quasi-static field (Oe)
FIG. 3. MOKE hysteresis loops showing the magnetisation
reversal driven by (a) a quasi-static magnetic field and (b) and
(c) with the addition of a pulsed magnetic field with triggering
indicated by the arrows. The loops show the behaviour 9V
20ns pulses with the laser at the stripline. The fitted lines
show a model fit to the data.
FIG. 4. a) Minimum pulsed voltage required to lead to mag-
netisation reversal when pulses are triggered at different QS
Bias fields. b)Pulsed field induced magnetisation reversal as
a function of quasi-static bias field measured at various sepa-
rations from the DW injection stripline. Pulses are 20 ns and
7.5 V
i
(
s
a
b
c
i
t
)
e
O
a
t
s
-
i
s
a
u
Q
120
115
110
105
100
-20
Pulsed field induced
magnetisation reversal
(%)
0
10
20
30
40
50
60
70
80
-10
0
10
20
Laser position ( m)
FIG. 5. Pulsed field induced magnetisation reversal measured
as a function of quasi-static bias field and measurement posi-
tion from the stripline. 20 ns Pulses at 7.5 V
Measurements at the stripline location show a large
pulsed-field induced magnetisation change which is most
significant when a large quasi-static field is used to drive
the DW propagation. Here, the result represents DWs
which reverse the magnetisation in nanobars near where
they are nucleated.
When the quasi-static bias field is reduced below
115 Oe the magnetisation change decreases. This indi-
cates that the proportion of pulsed field induced reversal
events within the region probed by the laser spot is re-
duced. This can be explained by DWs which are not able
to propagate so far through the structure in the lower
fields.
Measurements at greater distances from the stripline
show magnetisation reversal driven purely by the quasi-
static field (see field profiles in figure 2). Here a lower
magnetisation change is found as injected DWs must
propagate through a greater number of nanobars and ver-
tices before reaching the probed region. This means that
DW pinning is more likely, but at high quasi-static bias
fields, DW propagation up to 15 µm is still observed.
The DW propagation distance through the structure is
more clearly shown in in figure 5 where the pulsed-field-
induced magnetisation reversal is plotted as a function of
the measurement position and the quasi-static field. Here
a strong reversal is centered around the position of the
stripline at 0 µm which becomes more significant with
greater quasi-static fields. Again, as the fields approach
120 Oe the pulsed-field-induced reversal becomes indis-
tinguishable from the quasi-static field driven reversal.
With the large quasi-static fields, the distance over
4
which the reversal can be detected is much greater than
for the smaller quasi-static fields resulting in a triangular
shape in figure 5. This shows how the propagation of
a DW through the artificial spin ice structure depends
on the driving field applied to the DW. With low fields
the propagation distance is limited as multiple nanobars
and interconnecting verticies are encountered and pro-
vide pinning sites. However, with greater fields the pin-
ning from these become less significant allowing the DW
propagation over a greater number of nanobars and ver-
tices.
The simplified model of the DW path illustrated in
figure 1 relies on the external driving field exceeding the
nucleation field for a DW in these structures. However,
our results reveal that DWs are able to propagate below
this field with a driving field dependence to their propa-
gation length through the system.
The propagation at a reduced field can be explained by
considering the energetics associated with a propagating
DW. When considering the annihilation process between
the DW and vertex in figure 1(b) and (c) the energy
associated with the DW can be used to assist with the
nucleation of the DW in figure 1(d). This additional
energy would mean less is required externally from the
driving field.
The propagation length dependence can also be ex-
plained in terms of the energetics of the dynamically
propagating DWs. With a greater quasi-static driving
field the DWs travel with a greater energy. This means
that they can encounter, and overcome a greater number
energy barriers associated with the verticies before be-
coming pinned. The lower energy DWs become pinned
after fewer verticies and therefore travel a reduced dis-
tance through the artificial spin ice structuring.
In conclusion, we have probed the magnetisation rever-
sal in artificial spin ice systems through focussed MOKE
magnetometry. The combination of pulsed and quasi-
static magnetic fields allow for the injection of DWs and
the study of their dynamic interactions with the geo-
metrical structuring for a range of DW driving fields.
Our results demonstrate control over the location of in-
jected DWs within artificial spin ice structures and how
DW propagation distance depends on the external driv-
ing field.
Existing quasi-static models based on the manipula-
tion of magnetic and topological charges throughout the
system do not predict a length dependence to the propa-
gation. Our results, probing DWs in the dynamic regime
with a range of driving fields suggest changes for DWs
arriving at vertices in a higher energy state.
1 C. Nisoli, R. Moessner and P. Schiffer. Reviews of Modern
Condensed Matter 25, 363201 (2013).
Physics 85, 1473 -- 1490 (2013).
2 L.J. Heyderman and R.L. Stamps. Journal of Physics:
3 R.F. Wang, C. Nisoli, R.S. Freitas, J. Li, W. McConville,
B.J. Cooley, M.S. Lund, N. Samarth, C. Leighton, V.H.
Crespi and P. Schiffer. Nature 439, 303 (2006).
4 E. Mengotti, L.J. Heyderman, A.F. Rodr´ıguez, F. Nolting,
R.V. Hugli and H.B. Braun. Nature Physics 7, 68 (2010).
5 S. Ladak, D.E. Read, G.K. Perkins, L.F. Cohen and W.R.
Branford. Nature Physics 6, 359 (2010).
6 R.V. Hugli, G. Duff, B. O'Conchuir, E. Mengotti, A.F.
Rodr´ıguez, F. Nolting, L.J. Heyderman and H.B. Braun.
Philosophical transactions A 370, 5767 (2012).
7 A. Farhan, P.M. Derlet, A. Kleibert, A. Balan, R.V.
Chopdekar, M. Wyss, J. Perron, A. Scholl, F. Nolting
and L.J. Heyderman. Physical Review Letters 111, 057204
(2013).
8 W.R. Branford, S. Ladak, D.E. Read, K. Zeissler and L.F.
Cohen. Science 335, 1597 -- 600 (2012).
9 N. Rougemaille, F. Montaigne, B. Canals, M. Hehn, H. Ri-
ahi, D. Lacour and J.C. Toussaint. New Journal of Physics
15, 10 (2013).
10 Yi Qi, T. Brintlinger and J. Cumings. Physical Review B
77, 094418 (2008).
11 S. Zhang, I. Gilbert, C. Nisoli, G-W. Chern, M.J. Erickson,
L. O'Brien, C. Leighton, P.E. Lammert, V.H. Crespi and
P. Schiffer. Nature 500, 553 (2013).
12 U.B. Arnalds, A. Farhan, R.V. Chopdekar, V. Kapaklis,
A. Balan, E.T. Papaioannou, M. Ahlberg, F. Nolting, L.J.
Heyderman and B. Hjorvarsson. Applied Physics Letters
101, 112404 (2012).
13 S. Ladak, D.E. Read, T. Tyliszczak, W.R. Branford and
L.F. Cohen. New Journal of Physics 13, 023023 (2011).
14 P.E. Lammert, Xianglin Ke, Jie Li, C. Nisoli, David M.
Garand, Vincent H. Crespi and P. Schiffer. Nature Physics
6, 786 -- 789 (2010).
15 S.A. Daunheimer, O. Petrova, O. Tchernyshyov and
J. Cumings. Physical Review Letters 107, 167201 (2011).
16 O. Tchernyshyov and G-W. Chern. Physical Review Letters
5
95, 197204 (2005).
17 A. Pushp, T. Phung, C. Rettner, B. P. Hughes, S-H. Yang,
L. Thomas and S.S.P. Parkin. Nature Physics 9, 505
(2013).
18 S.K. Walton, K. Zeissler, D.M. Burn, S. Ladak, D.E. Read,
T. Tyliszczak, L.F. Cohen and W.R. Branford. New Jour-
nal of Physics 17, 013054 (2015).
19 P. Mellado, O. Petrova, Y. Shen and O. Tchernyshyov.
Physical Review Letters 105, 187206 (2010).
20 F Montaigne, D. Lacour, I.A. Chioar, N. Rougemaille,
D Louis, S Mc Murtry, H. Riahi, B.S. Burgos, T.O. Mente,
A. Locatelli, B. Canals and M. Hehn. Scientific reports 4,
5702 (2014).
21 Z. Budrikis, J.P. Morgan, J. Akerman, A. Stein, P. Politi,
S. Langridge, C.H. Marrows and R.L. Stamps. Physical
Review Letters 109, 037203 (2012).
22 C. Nisoli, Jie Li, Xianglin Ke, D. Garand, P. Schiffer and
Vincent H. Crespi. Physical Review Letters 105, 047205
(2010).
23 S. Ladak, S.K. Walton, K. Zeissler, T. Tyliszczak, D.E.
Read, W.R. Branford and L.F. Cohen. New Journal of
Physics 14, 045010 (2012).
24 M. Hayashi, L. Thomas, Y. B. Bazaliy, C. Rettner,
R. Moriya, X. Jiang and S.S.P. Parkin. Physical Review
Letters 96, 197207 (2006).
25 A. Himeno, T. Ono, S. Nasu, K. Shigeto, K. Mibu and
T. Shinjo. Journal of Applied Physics 93, 8430 (2003).
26 D.M. Burn, M. Chadha and W.R. Branford. Physical Re-
view B 92, 214425 (2015).
27 T J Silva, C S Lee, T M Crawford and C T Rogers. Journal
of Applied Physics 85, 7849 -- 7862 (1999).
28 D.M. Burn, E. Arac and D. Atkinson. Physical Review B
88, 104422 (2013).
29 B.K. Middleton, M.M. Aziz and J.J. Miles. IEEE Trans-
actions on Magnetics 36, 404 (2000).
|
1708.02628 | 1 | 1708 | 2017-08-08T19:53:28 | What is the best planar cavity for maximizing coherent exciton-photon coupling | [
"cond-mat.mes-hall"
] | We compare alternative planar cavity structures for strong exciton$-$photon coupling, where the conventional distributed Bragg reflector (DBR) and three unconventional types of cavity mirrors$-$ air/GaAs DBR, Tamm $-$ plasmon mirror and sub$-$wavelength grating mirror. We design and optimize the planar cavities built with each type of mirror at one side or both sides for maximum vacuum field strength. We discuss the trade$-$off between performance and fabrication difficulty for each cavity structure. We show that cavities with sub$-$wavelength grating mirrors allow simultaneously strongest field and high cavity quality. The optimization principles and techniques developed in this work will guide the cavity design for research and applications of matter$-$light coupled semiconductors, especially new material systems that require greater flexibility in the choice of cavity materials and cavity fabrication procedures. | cond-mat.mes-hall | cond-mat | What is the best planar cavity for maximizing coherent exciton-photon coupling
Zhaorong Wang,1 Rahul Gogna,2 and Hui Deng3, a)
1)EECS Department, University of Michigan, Ann Arbor, MI 48109,
USA
2)Applied Physics Department, University of Michigan, Ann Arbor, MI 48109,
USA
3)Physics Department, University of Michigan, Ann Arbor, MI 48109,
USA
We compare alternative planar cavity structures for strong exciton-photon coupling,
where the conventional distributed Bragg reflector (DBR) and three unconventional
types of cavity mirrors – air/GaAs DBR, Tamm-plasmon mirror and sub-wavelength
grating mirror. We design and optimize the planar cavities built with each type of
mirror at one side or both sides for maximum vacuum field strength. We discuss
the trade-off between performance and fabrication difficulty for each cavity struc-
ture. We show that cavities with sub-wavelength grating mirrors allow simultaneously
strongest field and high cavity quality. The optimization principles and techniques
developed in this work will guide the cavity design for research and applications of
matter-light coupled semiconductors, especially new material systems that require
greater flexibility in the choice of cavity materials and cavity fabrication procedures.
7
1
0
2
g
u
A
8
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
8
2
6
2
0
.
8
0
7
1
:
v
i
X
r
a
a)Electronic mail: dengh@umich.edu
1
Strong coupling between semiconductor quantum well (QW) excitons and cavity photons
leads to new quasi-particles – microcavity polaritons. Since their discovery1, planar micro-
cavity polaritons have become a fruitful ground for research on fundamental cavity quantum
electrodynamics, macroscopic quantum coherence, and novel device applications2–4. Crucial
for polariton research is a cavity with a strong vacuum field strength E at the QW plane
and a high quality factor Q. A strong vacuum field leads to stronger exciton-photon cou-
pling and thus a larger vacuum Rabi splitting between the polariton modes. A high quality
factor leads to long lifetime and coherence time of the cavity photon and correspondingly
the polariton. They together enable robust polariton modes, thermodynamic formation
of quantum phases, and polariton lasers with lower density threshold at higher operating
temperatures3.
Given the importance of a strong cavity field, there has been a few decades of effort to
improve the cavity field strength. Most commonly used in polariton research are planar
Fabry-Perot (FP) cavities formed by two distributed Bragg reflectors (DBRs), each DBR
consisting of either epitaxially-grown, closely lattice-matched alloys or amorphous dielectric
layers. This type of cavity can reach Q of tens of thousands in III-As based systems5,6, but
only about a thousand for III-N7,8 and even lower for other material systems9,10. The field
penetrates many wavelengths into the DBR, hence the field strength is not optimal11,12.
To achieve a stronger field, different cavity structures have been developed with reduced
effective cavity length, including using a metal mirror13 and using Al-oxide14–16 or air/GaAs
DBRs13,17 with larger index contrast. These structures showed greater polariton splitting
but unfortunately worse Q compared to AlGaAs-based DBRs; polariton lasing have not been
possible in these structures. Recently, cavities using a high index-contrast sub-wavelength
grating (SWG)18 were demonstrated for polariton lasers19. Not only does SWG allow greater
design flexibility20,21 and compatibility with unconventional materials, it is only a fraction in
thickness compared to typical DBRs, making it promising for shorter effective cavity length.
Yet the demonstrated SWG-based polariton cavity was not optimized for strong cavity field.
Here we demonstrate how to optimize these different types of cavity for the strongest
field, and compare their polariton splitting, quality factors and practicality for fabrication.
In particular, we find SWG cavities may allow simultaneously stronger field and high Q.
The cavity field relevant to the exciton-photon coupling is the vacuum fluctuation field.
2
Its strength E is normalized to the zero-point photon energy by
Z ǫ(r)E(r)2dV =
1
2
ωc,
(1)
where ǫ is the permittivity, and ωc is the cavity resonance energy. The integral is evaluated
in the entire space with a spatial-dependent ǫ. For a planar cavity, we consider the field
being confined in the z-direction but unbounded in the x and y directions. The integration
is thus evaluated in a quantization volume (Lx, Ly, Lz), where Lx and Ly are set to be much
larger than the wavelength, and Lz is set at some cutoff point where the field has decayed
significantly (∼1%).
The maximum field strength Emax serves as our main figure of merit for cavities designed
for strong coupling. Specifically, for a QW placed at the field maximum, the vacuum Rabi
splitting Ω is directly proportional to d · Emax, for d the QW exciton dipole moment. We
note that the Emax is closely related to the mode volume commonly used to characterize
photonic crystals cavity22,23 as well as the effective cavity length Lc for planar cavities11.
We choose Emax over Lc because the vacuum Rabi splitting is determined by not only Lc
but also ǫ as Ω ∝ (ǫLc)−1/2,12 while ǫ can vary by an order of magnitude in different
cavities. Therefore the maximum vacuum field strength is the most unambiguous quantity
to characterize the cavity for strong coupling. Also, we focus on high-Q cavities but do
not optimize for Q. This is because for cavities designed to have sufficiently high Q, the
experimentally achievable Q depends mainly on practical constrains such as chemical purity
and structural integrity of the fabricated structure.
In the following, we optimize the maximum vacuum field strength Emax for different
types of planar cavities. Based on Eq. 1, the Emax is enhanced in cavities with (i) a tightly
confined field profile E(r) and (ii) materials of low refractive indices. A tightly confined
field profile effectively reduces the range of integration, enhancing the field maximum. For
a planar cavity, this means using the shortest possible cavity length (half wavelength) and
using mirrors with shorter field penetration length. Equally important, lower refractive
indices lead to higher E(r), especially in the cavity layer where most of the field resides.
Vacuum or air has the lowest refractive index. Although not applicable to crystalline QWs
that needs mechanical support and surface protection, air-cavities can greatly enhance field
strength for QWs formed by two-dimensional (2D) van der Waals materials.
We use transfer matrix method for calculations of DBR-based cavities, and rigorous
3
coupled-wave analysis (RCWA) for SWG-based cavities. We obtain the cavity resonance
from the reflection spectrum of the cavity, using the real-valued bulk permittivity ǫ∞ for the
QW layer. Then we compute complex field distribution at the resonance and normalize the
field using Eq. 1. To include the exciton-photon coupling, we use a linear dispersion for the
QW layer24 modeled by a Lorentz oscillator25:
ǫ(e) = n2(e) = ǫ∞ +
f q22
mǫ0Lz
1
e2
0 − e2 − iγe
,
(2)
where f is the oscillator strength per unit area, q and m are the charge and mass of the
electron respectively, Lz is the QW thickness, e0 is the exciton energy, and γ is the exciton
linewidth. For a fair comparison of the different types of cavities, we focus on 2D half-
wavelength cavities with a single QW placed at the field maximum.26 We use III-As systems
as an example, because polariton cavities of highest qualities are all based on III-As systems.
The cavity is made of AlxGaAs alloys where the different Al content gives different refraction
index, with AlAs the lowest (n = 3.02), GaAs the highest (n = 3.68), and AlxGaAs a linear
interpolation (n = 3.68 − 0.66x). For the QW, we consider either a 12 nm GaAs/AlAs QW
or a 7 nm InGaAs/GaAs QW. For simplicity and ease of comparison, we assume both to
have the same exciton energy of 1.550 eV (800 nm)19, oscillator strength of f = 6 × 10−4A−2
27 and γ = 0.8 meV.
As a benchmark, we first describe the performance of the most widely used, monolithic
DBR-DBR cavities. DBRs are typically made of multiple pairs of high- and low-index layers,
all with an optical path length (OPL) of λ/4, for λ the cavity resonance wavelength. High
reflectance is achieved by maximal constructive interference among multi-reflections from
the layer interfaces. Light decays in a distance inversely proportional to the refraction index
contrast of the DBR pair. So a high index contrast is preferred for the DBR pair. For a
monolithic III-As cavity with a GaAs QW, we use AlAs (n = 3.02) for the low-index layer
and Al0.15Ga0.85As (n = 3.58) for the high index layer, where 15% AlAs alloy is included
instead of pure GaAs to avoid absorption at the QW exciton resonance. We consider a
bottom DBR with 20 pairs on GaAs substrate, and a top DBR with 16.5 pairs, matching
the reflectance of the bottom DBR. An experimental cavity Q of a few thousands can be
readily achieved with this structure. More DBR pairs will lead to a higher Q, but will have
negligible effect on the field confinement or the vacuum Rabi splitting.
To show the enhancement of the cavity vacuum field strength by reducing cavity length,
4
8
7
6
5
4
3
V
e
m
SWG-SWG cavity
Tamm-DBR hybrid
Air DBR
both-side
optimized
SWG-DBR hybrid
Air DBR both-side
from Ref[17]
Air DBR one-side
/2-cavity
Conventional DBR Cavities
with different cavity lengths
8 -cavity
2
1
1.5
2
2.5
E V
LxLy
3
10-6
FIG. 1. Calculated vacuum Rabi splitting Ω and maximum vacuum field strength maxeE for
various optimized cavities. All cavities are based on III-As material system. Single QW is embedded
at the field maximum. The vacuum field strength is calculated at the cavity resonance energy with
QW dispersion turned off, while the Rabi splitting is measured from the two reflection dips when
the QW dispersion is turned on. The dash-dotted line is a linear fit through all points.
we vary the cavity layer OPL from λ/2 to 8λ. As shown in Fig. 1, Emax increases with
decreasing cavity length, and the polariton splitting scales linearly with Emax. This confirms
the Emax as an appropriate figure of merit for optimizing exciton-photon coupling. The
field distribution of the best-performing λ/2 cavity is shown in Fig. 2(a). The maximum
field strength is Emax = 1.89 × 10−6V/pLxLy at the QW, but the field extends many
wavelengths into the DBRs due to the relatively small index contrast (< 1.2 : 1) of the
DBR layers. The reflectance spectrum shows a polariton splitting of 4.54 meV (Fig. 2(b)).
This conventional cavity can be fabricated by mature epitaxial growth technology as a
monolithic crystalline structure with few impurities or defects. However, the requirement
of lattice-matched materials, with resultantly small index contrast, leads to limited field
confinement.
For the second type of cavity, we increase the index contrast of the DBR layer by replacing
the AlAs layer by air or vacuum (n = 1), which we call an air-DBR. It can be created via
selective wet etching13,17. It represents the the highest possible refraction index contrast for
a DBR. The GaAs QW still needs to be embedded inside an AlAs cavity (as opposed to an
air cavity) to avoid detrimental surface effects. Each material layer – both the cavity layer
and the Al0.15GaAs layers in the DBRs, need to be sufficiently thick for mechanical stability.
5
(c)
10-6
(a)
10-6
1.5
1
0.5
0
1600
1800
2000
2200
2400
2600
z (nm)
(b)
1
e
c
n
a
t
c
e
l
f
e
R
0.8
0.6
0.4
0.2
0
1.544
(e)
10-6
2.5
2
1.5
1
0.5
0
QW dispersion
turned on
QW dispersion
turned off
1.547
1.55
1.553
1.556
Energy (eV)
0
1000
2000
3000
z (nm)
2
1.5
1
0.5
0
1
(f)
e
c
n
a
t
c
e
l
f
e
R
0.8
0.6
0.4
0.2
0
1.544
(d)
1
e
c
n
a
t
c
e
l
f
e
R
0.8
0.6
0.4
0.2
QW dispersion
turned on
QW dispersion
turned off
0
500
1000
1500
2000
z (nm)
0
1.544
1.547
1.55
1.553
1.556
Energy (eV)
QW dispersion
turned on
QW dispersion
turned off
1.547
1.55
1.553
1.556
Energy (eV)
FIG. 2. Vacuum field profile and Rabi splitting for conventional DBR cavity (a-b) and air DBR
cavity (c-f). The color stripes represent different materials– red is Al0.15Ga0.85As, lighter red is the
lower index AlAs, white region is air, and the thin stripe at the field maximum is a GaAs QW.
All three structures sit on GaAs substrate, which is not shown in (a) and (c). The vacuum field
strength has a unit of Volt/(normalization length in meters).
The experimentally realized structure used a minimum OPL of 3λ/4 for each suspended
layer17, which we also adopt. Based on this, Fig. 2(c) shows the optimal structure we
obtained. The top mirror consists of 3 pairs of Al0.15Ga0.85As/air layers. The air layer has
λ/4 OPL, the Al0.15Ga0.85As layer has 3λ/4 OPL (∼ 168 nm). The bottom DBR is the
same as in the DBR-DBR cavity (Fig. 2(a)). The maximum field strength is increased to
Emax = 2.29 × 10−6V/pLxLy. The corresponding vacuum Rabi splitting is Ω = 5.51 meV,
21% larger than the conventional DBR cavity.
Further increase of the field confinement can be obtained by replacing the bottom DBR
also by an air-DBR, as shown in Fig. 2(e). An experimentally fabricated air-DBR cavity17
used a 7 nm In0.13GaAs QW embedded in a GaAs high-index λ-cavity. For this structure,
we calculated Emax = 2.47 × 10−6V/pLxLy and Ω = 6.32 meV (Fig. 1), which is 39%
improvement over the conventional DBR cavity.
The structure can be further optimized by using a cavity layer of low refraction index.
However, an AlAs-cavity is incompatible with the selective wet-etching required to create
the bottom air-DBR; instead a Ga-rich layer is needed. Hence, for the cavity, we use a
Al0.4Ga0.6As (nr = 3.33) layer of λ/2 OPL sandwiched between two Al0.15Ga0.85As (nr =
3.58) layers of λ/4 OPL, for a total OPL of λ. Similarly the 3/4λ-OPL high-index DBR
6
layer can also be replaced by such sandwich structure to improve the index contrast. The
wet etching selectivity of AlAs over Al0.4Ga0.6As has been shown to be 107.28 A 12 nm GaAs
QW is placed at the center of the cavity. We obtain Emax = 2.91 × 10−6V/pLxLy and
Ω = 7.02 meV, 55% larger than conventional DBR cavity. This structure represents the
best Rabi splitting in realistic DBR-based III-As cavities.
To obtain even tighter field confinement, we consider another two types of cavities where
the DBR is replaced by mirrors with shorter penetration depth – a metal mirror and a
sub-wavelength grating mirror. Metal mirror, with a typical penetration depth of less than
100 nm, can be used to form Tamm-plasmon polaritons29. The optimal metal-DBR cavity
we find consists of 45 nm thick gold layer as the top mirror (Fig. 3(a)), the same bottom
DBR as in the conventional DBR-DBR cavity is used, and a λ/2 AlAs cavity layer slightly
adjusted to compensate for the change of the reflection phase from π.
In this structure, the field decays rapidly in the gold layer, resulting in a much shorter
effective cavity length (Fig. 3(a)), therefore a much higher vacuum field strength. We obtain
30 and Ω = 6.51 meV, 43% larger than conventional DBR
Emax = 2.47 × 10−6V/pLxLy
cavity. This is an impressive improvement considering only one side of the cavity is replaced
by a metal mirror. The structure was used to create the first organic polariton31,32.
In
III-As cavities, Grossmann et al13 additionally replaced the bottom DBR with an air DBR
to further improve the vacuum Rabi splitting to about double that of the conventional DBR
cavity.33 However, the drawback of this structure is the low cavity Q due to metal loss. The
cavity linewidth is comparable to the Rabi splitting; the system remains in the intermediate
coupling regime rather than the strong coupling regime (Fig. 3(b))34. The large loss in metal
also makes it difficult to achieve quantum degeneracy or low threshold laser.
To maintain both a high cavity Q and short cavity length, we use a III-As subwavelength
grating (SWG) for the fourth type of cavity18,19. The SWG is a thin layer of high-index
dielectric grating suspended in air, acting as the high-reflective mirror (Fig. 4(a)). To avoid
non-zero order evanescent diffraction waves entering the cavity layer, we include a 3/4λ
air-gap between the SWG and the bottom structure. The λ/2 cavity layer and bottom
DBR are identical to the conventional DBR cavity as in Fig. 2(a). We obtain Emax =
2.23 × 10−6V/pLxLy and Ω = 5.37 meV, both 19% larger compared to the conventional
DBR cavity and comparable to the single-sided air-DBR cavity. The advantage of the SWG-
DBR cavity is its high cavity quality and simplicity in fabrication. The structure is first
7
(a)
10-6
2
1.5
1
0.5
(b)
1
e
c
n
a
t
c
e
l
f
e
R
0.8
0.6
0.4
0.2
0
1000
1200
1400
z (nm)
1600
1800
0
1.52
QW dispersion
turned off
QW dispersion
turned on
1.53
1.54
1.55
1.56
1.57
1.58
Energy (eV)
FIG. 3. Vacuum field profile (a) and Rabi splitting (b) for Tamm-plasmon type cavity. The
DBR structure is the same with previous DBR cavities. The excitation wave is launched from the
substrate to top (left to right). The gold colored region represents a 45nm gold layer. Its refractive
index is taken from Olmon, et al35 for evaporated gold at 800nm. The cavity Q is around 60 inferred
from the linewidth, mainly due to the loss in the metal. The polariton splitting is 6.51meV, 43%
larger than conventional DBR cavity.
fabricated as a high-quality, monolithic crystal by epitaxial growth, as with the conventional
DBR cavities. The SWG is then created by lithography and etching. Because the grating is
the only air-suspended layer created, SWG-DBR hybrid cavity is easier to make and more
robust mechanically than an air-DBR. Polariton lasing and excellent coherence properties
have been demonstrated in SWG-DBR cavities19,36,37, but not yet in cavities using air-DBR
or metal mirrors.
Tighter cavity field confinement can be achieved when replacing the bottom DBR also by
an SWG. As shown in Fig. 4 (b), a λ/2 AlAs cavity layer sandwiched by two Al0.15Ga0.85As
λ/4 layers is air-suspended between two identical SWGs. Because of the evanescent diffrac-
tion waves from the SWGs, the field at the QW is slightly non-uniform. We record an
average vacuum strength at the QW to be 2.92 × 10−6V/pLxLy. The vacuum Rabi split-
ting is Ω = 7.58 meV, 67% larger than that of the conventional DBR cavity.
The fabrication of such a double-SWG cavity is more challenging than the SWG-DBR
hybrid cavity, but within reach of established fabrication techniques. The top-SWG and the
rest of the structure can be fabricated separately at first, then they can be bonded together
by cold welding38 or stacked together using the micromanipulation technique applied to
making 3D photonic crystals39. Alternatively, one could make the SWGs from Si/SiO2
wafer, then do a wafer bonding with the III-V active layer40. Additional practical challenges
include heat dissipation and proper design of current injection path for electrical-pumped
polariton devices. Finally we note that the SWG-based cavity may be particularly useful
8
(a)
-200
0
200
400
600
800
)
m
n
(
z
1000
1200
0
10-6
(b)
2
1.5
1
0.5
-200
0
200
400
)
m
n
(
z
600
800
200
400
x (nm)
0
200
400
x (nm)
10-6
3.5
3
2.5
2
1.5
1
0.5
(c)
1
e
c
n
a
t
c
e
l
f
e
R
0.98
0.96
0.94
0.92
QW dispersion
turned on
QW dispersion
turned off
1.545
1.55
1.555
(d)
1
e
c
n
a
t
c
e
l
f
e
R
0.98
0.96
0.94
0.92
QW dispersion
turned on
QW dispersion
turned off
1.545
1.55
1.555
Energy (eV)
Energy (eV)
FIG. 4. Vacuum field profile and Rabi splitting for SWG-DBR hybrid cavity (a-b) and double
SWG cavity (c-d). The design parameters for the SWG are, thickness of grating 95.6nm, period
503nm, filling factor 0.3, using Al0.15GaAs(n = 3.58), with air gap 511nm (left) and 144nm (right)
between SWG and the cavity layer. Bottom DBR in the hybrid cavity is the same with conventional
DBR cavity used above. The middle resonance in the reflection spectrum (d) is due to the exciton
absorption of the first-order grating diffraction mode (evanescent in air but propagating in the
cavity layer).
for coupling to 2D materials, where similar procedures of integration are already necessary.
Additionally, it is possible to hold 2D material with lower index materials, further enhancing
the vacuum field.
In summary, we have investigated the performance of strong coupling for several types
of planar cavities. We use maximum vacuum field strength as the main figure of merit,
in place of the effective cavity length or mode volume. The Tamm-DBR cavity can pro-
vide ∼ 43% improvement in Rabi splitting with only one mirror replaced by a gold thin
film. Researchers using active media with a large oscillator strength may find this struc-
ture easy to fabricate and yet still sufficient for reaching strong-coupling. However, its low
quality factor due to metal loss limits the coherence of the exciton-photon coupling and
the resulting polariton modes. The air-DBR type cavities are shown to provide 21% (55%)
improvement over conventional DBR cavities if one mirror (both mirror) is replaced with
an air-DBR. SWG based cavities provide 19% (67%) improvement when one (two) SWG
is used, comparable to (better than) that of air-DBR cavities. In practice, among all al-
ternative structures to conventional DBR-DBR cavities, SWG-DBR cavities are so far the
only ones where high cavity quality factor and polariton lasing have been demonstrated
experimentally. Our findings here may guide the design of cavity systems for the research
9
and applications of semiconductor exciton-polaritons, especially for increasing their operat-
ing temperature, lowering the density threshold for quantum phase transition and polariton
lasing, and incorporating newer materials.
ZW, HD acknowledge the support by the National Science Foundation (NSF) under
Awards DMR 1150593 and the Air Force Office of Scientific Research under Awards FA9550-
15-1-0240. We thank Pavel Kwiecien for his open-source RCWA code used for calculations
in this work.
REFERENCES
1C. Weisbuch, M. Nishioka, a. Ishikawa, and Y. Arakawa, Physical Review Letters 69,
3314 (1992).
2G. Khitrova and H. M. Gibbs, Reviews of Modern Physics 71 (1999).
3H. Deng and Y. Yamamoto, Reviews of Modern Physics 82, 14891537 (2010).
4D. Sanvitto and S. Kna-Cohen, Nature Materials 15, 1061 (2016).
5S. Reitzenstein, C. Hofmann, A. Gorbunov, M. Strau, S. H. Kwon, C. Schneider, A. Lf-
fler, S. Hfling, M. Kamp, and A. Forchel, Applied Physics Letters 90, 251109 (2007),
http://dx.doi.org/10.1063/1.2749862.
6B. Nelsen, G. Liu, M. Steger, D. W. Snoke, R. Balili, K. West, and L. Pfeiffer, Phys. Rev.
X 3, 041015 (2013).
7G. Christmann, R. Butte, E. Feltin, J.-F. Carlin, and N. Grandjean, Applied Physics
Letters 93, 051102 (2008), 5.
8A. Das, J. Heo, M. Jankowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, Phys.
Rev. Lett. 107, 066405 (2011).
9S. Kena-Cohen and S. R. Forrest, Nat Photon 4, 371 (2010).
10X. Liu, T. Galfsky, Z. Sun, F. Xia,
and E.-c. Lin, Nature Photonics 9, 30 (2015),
arXiv:1406.4826.
11Y. Yamamoto, S. MacHida, and G. Bjork, Physical Review A 44, 657 (1991).
12T. Norris, J. Rhee, C. Sung, Y. Arakawa, M. Nishioka, and C. Weisbuch, Physical review.
B, Condensed matter 50, 14663 (1994).
13C. Grossmann, C. Coulson, G. Christmann, I. Farrer, H. E. Beere, D. a. Ritchie, and J. J.
Baumberg, Applied Physics Letters 98, 231105 (2011).
10
14T. R. Nelson, J. P. Prineas, G. Khitrova, H. M. Gibbs, J. D. Berger, E. K. Lindmark, J.-H.
Shin, H.-E. Shin, Y.-H. Lee, P. Tayebati, and L. Javniskis, Applied Physics Letters 69,
3031 (1996).
15L. A. Graham, Q. Deng, D. G. Deppe, and D. L. Huffaker, Applied Physics Letters 70,
814 (1997).
16a. R. Pratt, T. Takamori, and T. Kamijoh, Applied Physics Letters 74, 1869 (1999).
17J. Gessler, T. Steinl, A. Mika, J. Fischer, G. S¸ek, J. Misiewicz, S. Hofling, C. Schneider,
and M. Kamp, Applied Physics Letters 104, 081113 (2014).
18M. C. Huang, Y. Zhou, and C. J. Chang-Hasnain, Nature Photonics 1, 119122 (2007).
19B. Zhang, Z. Wang, S. Brodbeck, C. Schneider, M. Kamp, S. Hofling, and H. Deng, Light:
Science & Applications 3, e135 (2014).
20Z. Wang, B. Zhang, and H. Deng, Physical Review Letters 114, 1 (2015).
21B. Zhang, S. Brodbeck, Z. Wang, M. Kamp, C. Schneider, S. Hofling, and H. Deng,
Applied Physics Letters 106 (2015), 10.1063/1.4907606.
22J. S. Foresi, P. R. Villeneuve, J. Ferrera, E. R. Thoen, G. Steinmeyer, S. Fan, J. D.
Joannopoulos, L. C. Kimerling, H. I. Smith, and E. P. Ippen, Nature 390, 143 (1997).
23P. T. Kristensen, C. Van Vlack, and S. Hughes, Optics Letters 37, 1649 (2012).
24Y. Zhu, D. J. Gauthier, S. E. Morin, Q. Wu, H. J. Carmichael, and T. W. Mossberg,
Physical Review Letters 64, 2499 (1990).
25R. Houdr´e, R. P. Stanley, U. Oesterle, M. Ilegems, and C. Weisbuch, Physical Review B
49, 16761 (1994).
26In all cavities, multiple QWs can be used to enhance the polariton splitting.
27L. C. Andreani and A. Pasquarello, Physical Review B 42, 8928 (1990).
28E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Applied Physics Letters 51,
2222 (1987).
29M. Kaliteevski, I. Iorsh, S. Brand, R. A. Abram, J. M. Chamberlain, A. V. Kavokin, and
I. A. Shelykh, Physical Review B - Condensed Matter and Materials Physics 76, 1 (2007).
30For strong dispersive media like metal, the energy density in field normalization equation 1
is modified by Eq.6.126 in Jackson, Classical Electrodynamics, 3rd edition, 2001.
31D. G. Lidzey, D. D. C. Bradley, M. S. Skolnick, T. Virgili, S. Walker, and D. M. Whittaker,
Nature 395, 53 (1998).
32D. G. Lidzey, D. D. C. Bradley, T. Virgili, A. Armitage, M. S. Skolnick, and S. Walker,
11
Phys. Rev. Lett. 82, 3316 (1999).
33We have not been able to reproduce the field profile or reflection spectrum shown in Ref.13
in our simulation and instead found the 45 nm thick gold layer as the optimal for a Tamm-
plasmon mirror.
34V. Savona, L. C. Andreani, P. Schwendimann, and A. Quattropani, Solid State Commu-
nications 93, 733 (1995).
35R. L. Olmon, B. Slovick, T. W. Johnson, D. Shelton, S.-h. Oh, G. D. Boreman, and M. B.
Raschke, Phys. Rev. B 86, 1 (2012).
36J. Fischer, S. Brodbeck, B. Zhang, Z. Wang, L. Worschech, H. Deng, M. Kamp, C. Schnei-
der, and S. Hfling, Applied Physics Letters 104 (2014), 10.1063/1.4866776.
37S. Kim, B. Zhang, Z. Wang, J. Fischer, S. Brodbeck, M. Kamp, C. Schneider, S. Hfling,
and H. Deng, Physical Review X 6, 011026 (2016).
38S. K´ena-Cohen, M. Davan¸co, and S. Forrest, Physical Review Letters 101, 1 (2008).
39K. Aoki, D. Guimard, M. Nishioka, M. Nomura, S. Iwamoto, and Y. Arakawa, Nature
Photonics 2, 688 (2008).
40C. Sciancalepore, B. Ben Bakir, C. Seassal, X. Letartre, J. Harduin, N. Olivier, J. Fedeli,
and P. Viktorovitch, IEEE Photonics Journal 4, 399 (2012).
12
|
1808.09157 | 1 | 1808 | 2018-08-28T07:56:22 | Theory of charge-spin conversion at oxide interfaces: The inverse spin-galvanic effect | [
"cond-mat.mes-hall"
] | We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical approaches we investigate how the spin texture of the electron eigenstates due to the interplay of spin-orbit coupling and inversion asymmetry determines the sign of the induced spin polarization as a function of the chemical potential or band filling, both in the absence and presence of local disorder. With the latter, we find that the induced spin polarization evolves from a non monotonous behavior at zero temperature to a monotonous one at higher temperature. Our results may provide a sound framework for the interpretation of recent experiments. | cond-mat.mes-hall | cond-mat | a
Theory of charge-spin conversion at oxide interfaces:
The inverse spin-galvanic effect
Gotz Seibolda, Sergio Caprarab, and Roberto Raimondic
aInstitut fur Theoretische Physik, BTU Cottbus-Senftenberg, PBox 101344, 03013 Cottbus,
bDipartimento di Fisica Universit`a di Roma Sapienza, piazzale Aldo Moro 5, I-00185 Roma,
Germany
cDipartimento di Matematica e Fisica, Universit`a Roma Tre, Via della Vasca Navale 84, 00146
Italy
Rome, Italy
ABSTRACT
We evaluate the non-equilibrium spin polarization induced by an applied electric field for a tight-binding model of
electron states at oxides interfaces in LAO/STO heterostructures. By a combination of analytic and numerical
approaches we investigate how the spin texture of the electron eigenstates due to the interplay of spin-orbit
coupling and inversion asymmetry determines the sign of the induced spin polarization as a function of the
chemical potential or band filling, both in the absence and presence of local disorder. With the latter, we
find that the induced spin polarization evolves from a non monotonous behavior at zero temperature to a
monotonous one at higher temperature. Our results may provide a sound framework for the interpretation of
recent experiments.
Keywords: Spin-orbit coupling, spin-charge conversion, oxides interfaces
1. INTRODUCTION
It is well known that the breaking of the inversion symmetry leads to the so-called Rashba spin-orbit coupling
(SOC),1 -- 3 where polar and axial vectors transform similarly.4 Basically this allows for two major possibilities of
charge to spin conversion: The spin Hall (SH)5 and the inverse spin galvanic (ISG) effect,6, 7 as well as for their
Onsager reciprocal effects. While the SH effect converts an electrical current into a spin imbalance at the sample
edges via an induced perpendicular spin current, the ISG effect creates a bulk non-equilibrium spin polarization
by a flowing electrical current.6, 8 -- 11 The inverse SG effect corresponds then to the production of electrical
current via the pumping of spin polarization.12, 13 Both the SG12, 13 and the ISG14 -- 20 effects have been observed
in semiconductors. In the first case an electrical current is measured after pumping spin polarized light (SG)
whereas in the second case Faraday and Kerr spectroscopies measure the spin polarization induced by the applied
current. The SG effect has also been very effectively measured by spin pumping from an adjacent ferromagnet
into a metallic interface,21 into a topological insulator surface23, 24 and more recently into the two-dimensional
electron gas (2DEG) in oxide LAO/STO heterostructures.25 -- 28 These latter materials have emerged29 -- 33 as
very promising materials for the SG and ISG effect, due to the large values of the Rashba SOC parameter α
as experimentally observed34 -- 37 and also theoretically calculated,38 -- 40 even though it is likely that, due to their
complex band structure, the available theory41 of the SG/ISG effect developed for the 2DEG in semiconductors
may not be able to capture a number of specific features. A first step in this direction has been made recently
by a combination of analytical diagrammatic and numerical approaches.42, 43
The layout of the paper is the following. In the next section we introduce a model for the electron states
relevant for describing transport at oxide LAO/STO interfaces. In section 3 we provide the necessary formalism
of linear response theory for the SG and ISG effects. In section 4 we introduce an approximate effective model
for electron states close to band minima. In section 5 we evaluate analytically the SG response for the effective
Further author information: (Send correspondence to Roberto Raimondi.)
Roberto Raimondi: E-mail: roberto.raimondi@uniroma3.it
H0 =
εxy
k
0
0
0
εxz
k
0
0
0
εyz
k
(1)
model, whereas in section 6 we introduce disorder and the necessary formalism to handle it. Finally in section
7 we present a fully numerical approach which includes both cases without and with disorder. We conclude in
section 8. A number of technical details are provided in the appendices.
2. THE MODEL
The electronic structure of the 2DEG at LAO/STO interfaces, perpendicular to the (001) crystal direction, is
usually described39, 44, 45 within a tight-binding Hamiltonian H0 for the Ti t2g orbitals, dxy, dxz,dyz, supplemented
by local atomic spin-orbit interactions with Hamiltonian Haso and an interorbital hopping with Hamiltonian HI
which is induced by the interface asymmetry.
The hopping between the d orbitals of two neighbouring cubic cells is mediated via intermediate jumps to p
orbitals. For instance, the hopping between two dxy orbitals along the x axis occurs via two successive hopping
dxy → py and py → dxy. In the first hop, the overlap, which is of order ∼ tpd, yields a positive sign, whereas
the sign is negative ∼ −tpd in the second one. Hence the effective dxy − dxy hopping goes like −t2
pd/∆E, with
∆E being the energy difference between d and p orbitals. As a result, in the basis xy(cid:105),xz(cid:105),yz(cid:105) the hopping
between similar orbitals reads as
with, setting to unity the lattice spacing,
εxy
k = −2t1[cos(kx) + cos(ky) − 2] − 4t3[cos(kx) cos(ky) − 1]
εxz
k = −2(t1 + t3)[cos(kx) − 1] − 2t2[cos(ky) − 1] + ∆
εyz
k = −2(t1 + t3)[cos(ky) − 1] − 2t2[cos(kx) − 1] + ∆
where the energy difference ∆ between the xy(cid:105) and xz(cid:105),yz(cid:105) states is due to the confinement of the 2DEG in
the xy-plane.46
The atomic SOC is given by
with τ i denoting the Pauli matrices.
Haso = ∆aso
0
iτ x
−iτ y
−iτ x
0
iτ z
iτ y
−iτ z
0
(2)
(cid:48)
Figure 1. At the interface an orbital polarization and (or) orbital displacement results in hopping processes ∼ t
pd as
between px- and zx-orbitals along the y-direction. The asymmetry is visualized by a small shift of px-orbitals along the
z-direction.
Hopping between different d orbitals may occur if inversion symmetry is broken, see Fig. 1. Consider, for
instance, the two hops along the y direction, dxy → px and px → dzx. While the first hop ∼ tpd is as the first
hop of the effective hopping between two dxy orbitals discussed above, the second hop ∼ t(cid:48)
pd will be forbidden in
the presence of inversion symmetry. To see this consider that
tpd = (cid:104)px, R +
a
2
yHdxy, R(cid:105),
where R is the lattice site of the dxy orbital. In the same way
t(cid:48)
pd = (cid:104)dzx, R + ayHpx, R +
a
2
y(cid:105).
In both cases, H is the full Hamiltonian. If H is invariant with respect to the inversion z → −z, then necessarily
t(cid:48)
pd = 0, because px is even, while dzx is odd. Clearly if H has terms which are not invariant for z → −z, then
t(cid:48)
pd (cid:54)= 0. As a result the interface asymmetry hopping reads44
(3)
HI = γ
0
2i sin(ky)
2i sin(kx)
−2i sin(ky) −2i sin(kx)
0
0
0
0
.
In the following we use the parameters, t1 = 0.277 eV, t2 = 0.031 eV, t3 = 0.076 eV, ∆ = 0.4 eV, ∆aso = 0.010 eV,
γ = 0.02 eV, which have been derived in Ref.39 from projecting DFT on the t2g Wannier states. Note that for
the splitting ∆ we take a value intermediate between the theoretical (∆ = 0.19 eV) and the experimental one
(∆ = 0.6 eV). The left panel of Fig. 2 shows the band dispersions along the x axis for these values of the
parameters. The bands come naturally in three pairs, which are split by the combined effect of the spin-orbit
coupling and the inversion symmetry breaking. For our analysis we have selected three different values of the
chemical potential for corresponding filling regimes. For µ = 0.3 eV, only the lowest pair of bands (1,2) is
occupied. The chemical potential µ = 0.425 eV is close to the Lifshitz point, where the spin-orbit splitting is
large and the pairs of bands (3,4) and (5,6) start to be filled. Finally, the chemical potential µ = 0.7 eV is in the
regime, where all pairs of bands (1,2), (3,4) and (5,6) are occupied.
We now analyze the chirality for each eigenstate band p = 1, . . . , 6 by computing the spin at each momentum
point of the Fermi surface (FS) according to
Sα(p, kF ) = (cid:88)n,σ,σ(cid:48)
Φ∗n,σ(p, kF )τ α
σ,σ(cid:48)Φn,σ(cid:48)(p, kF )
where Φn,σ(cid:48)(p, kF ) are the eigenfunctions of the system at momentum kF . The indices n = xy, xz, yz and σ label
the orbital and its spin. Then the chirality of the p-th band can be obtained from
kFS(p, kF (cid:19) .
α(p) = arcsin(cid:18) kF × S(p, kF ) · ez
Fig. 2 shows the chiralities for each pair of bands at selected chemical potentials and the corresponding FSs. For
the lowest pair of bands (1,2) the momentum dependent spin pattern displays a vortex-type structure with the
core centered at Γ = (0, 0). Thus, even when the FS changes from electron- to hole-like between µ = 0.5 and
µ = 0.6, the corresponding chiralities are always confined to α(p) ≈ ±π/2 without any sign change in α. For
the middle pair of bands (3,4) the spin structure is composed of two vortex patterns (with the same vorticity)
centered at (π, 0) and (0, π). As a consequence, the spin texture vanishes along the diagonals and a Rashba-type
description along this direction fails. In section 4 we will come back to this point. However, for small µ and
all other momenta the chirality also starts at α ≈ ±π/2 but then on average becomes smaller with increasing
chemical potential and eventually changes sign for µ ≈ 1.5. An analogous situation occurs for the uppermost
pair of bands where the 'spin-vortex core' is centered at (π, π). In this case the chiralities also change sign upon
increasing the chemical potential while at small µ one again recovers α ≈ ±π/2.
3. LINEAR RESPONSE THEORY
In this paper we aim at evaluating the spin polarization induced by an externally applied electric field. To be
definite we take the electric field along the x axis and the spin polarization along the y axis. To linear order in
the applied field we write the spin polarization as
sy(ω) = σISG(ω) Ex(ω),
(4)
Figure 2. Left panel: Structure of the t2g interface bands. The inset enlarges the region around the 'Lifshitz' point where
the spin-orbit splitting is large. The horizontal dashed lines in the main panel refer to three values of chemical potential:
µ = 0.3 eV (blue line), µ = 0.425 eV (red line) and µ = 0.7 eV (green line). The right panel displays the spin texture
for the three pairs of bands together with their Fermi surfaces. For the lower pair of bands (1,2) the spins point in the
opposite direction.
where σISG, the "conductivity" for the ISG effect, can be obtained by the zero-momentum limit of the Fourier
transform Ryx(ω) of the response function (henceforth the symbols in capital letters indicate the operators for
spin density and charge current) defined as
where the brackets stand for the quantum-statistical average and θ (t) is the Heaviside step function. The
frequency-dependent ISG conductivity reads
Ryx(t, r) = −ıθ(t)(cid:104)[Sy(t, r), Jx](cid:105) ,
(5)
σISG(ω) = lim
η→0+ (cid:60)(cid:20) Ryx(ω)
ı(ω + ıη)(cid:21) = −πδ(ω)R(cid:48)
yx(0) + P
R(cid:48)(cid:48)
yx(ω)
ω
≡ DISGδ (ω) + P
R(cid:48)(cid:48)
yx(ω)
ω
,
(6)
where the first term will be referred to as the Drude singular term and the second as the regular term, in analogy
with the terminology used in the case of the optical conductivity. Because under time reversal both the charge
current and the spin polarization are odd, according to the Onsager relation, the SG and ISG conductivities are
equal.41 For this reason we will use the term SG conductivity (SGC) for both direct and inverse effects. The
calligraphic symbol P stands for the principal part. The real R(cid:48)
yx(ω) parts of the
yx(ω) and the imaginary R(cid:48)(cid:48)
response function are related by the Kramers-Kronig relation (KKR)
∞
−∞
d ω(cid:48) R(cid:48)(cid:48)
yx(ω(cid:48))
ω(cid:48) − ω
.
∞
d ω σISG(ω) = 0
(7)
(8)
By integration over the frequency, thanks to the KKR, the SGC satisfies the following sum rule
R(cid:48)
yx(ω) =
1
π
due to the fact that for the SGC there is no 'diamagnetic' contribution as opposed to the optical conductivity.
In the following we are going to apply the above formulae to the model introduced in section 2. To this end,
it is instructive to consider first the case of the Rashba SOC for a 2DEG with quadratic dispersion relation in
−∞
-π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx kxkydkx~ dSyEx-π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx -π-π/20π/2π-π-π/20π/2πky kx a)b)c)Band 1Band 2Band 3Band 4Band 5Band 65FIG.5:Leftpanel:Structureofthet2ginterfacebands.Theinsetenlargestheregionaroundthe'Lifshitz'pointwherethespin-orbitsplittingislarge.TheverticallinesinthemainpanelrefertothechemicalpotentialsforwhichtheFermisurfaceisshowninFig.1.TherightpanelshowdisplaysthechiralspinstructurefortheupperofthethreepairofbandstogetherwiththeFS.Forthelowerbandsthespinspointintheoppositedirection.PERTURBATIVECALCULATIONAroundthepointthenon-interactingpartofthehamiltonianreads"xyk=(t1+2t3)k2(12)"xzk=(t1+t3)k2x+t2k2y+(13)"yzk=(t1+t3)k2y+t2k2x+.(14)Theatomicspin-orbitcoupling(⇠⌧z,cf.Eq.(2))liftsthedegeneracybetweenxzandyzbutleavesthespindegeneracy,cf.Fig.7.OneobtainstheneweigenvaluesE±=+12(t1+t2+t3)k2±12q(t1+t3t2)2(k2xk2y)2+42asoandeigenfunctionxz,"i=ia+,"i+ib,"i(15)yz,"i=b+,"i+a,"i(16)xz,#i=ia+,#i+ib,#i(17)yz,#i=b+,#ia,#i(18)witha=1p2r1+"xz"yz("xz"yz)2+42aso(19)⇡1p21+14aso(t1+t3t2)(k2xk2y)b=1p2r1"xz"yz("xz"yz)2+42aso(20)⇡1p2114aso(t1+t3t2)(k2xk2y).InthisnewbasistheasymmetryhoppingisgivenbyHI=p2(ky+ikx)xy,"ih+,"+h.c.+p2(kyikx)xy,#ih+,#+h.c.+p2(kyikx)xy,"ih,"+h.c.+p2(ky+ikx)xy,#ih,#+h.c.andtheresidualcouplingofHasowiththexy-levelreadsHaso=p2asoxy,"ih+,#+h.c.+p2asoxy,#ih+,"+h.c.12p2(t1+t3t2)(k2xk2y)xy,"ih,#+h.c.12p2(t1+t3t2)(k2xk2y)xy,#ih,"+h.c..Inthefollowingwerestrictontheregionclosetothe-pointwhereaso>tk2andneglectthereforethetwoEk[eV](kx,0) the effective mass approximation. The insight gained in this simpler case will guide us also in the analysis of the
model with a complex band structure. We consider then the Rashba-Bychkov Hamiltonian3
H =
p2
2m
+ α(τ xpy − τ ypx),
(9)
where m is the effective mass and α the SOC. The 2DEG is confined to the xy plane and px and py are the
momentum operators along the two coordinate axes. Clearly there are two eigenvalues E±(p) = p2/2m± αp with
the corresponding eigenstates of (9) being plane waves whose spin quantization axis is fixed by the momentum
direction
p, s(cid:105) =
1
√2(cid:18) s ıe−ıθ
1
(cid:19) , s = ±1
where tan(θ) = py/px. The ISG response function at finite frequency and momentum reads
Ryx(ω, q) = (cid:88)p,s1,s2
(cid:104)p, s1Syp, s2(cid:105)(cid:104)p, s2Jxp, s1(cid:105)
f (Es1 (p) − µ) − f (Es2(p + q) − µ)
ω + ıη + Es1(p) − Es2 (p + q)
,
(10)
(11)
where f (E) is the Fermi distribution function at temperature T . Depending on the values of the spin indices,
one has intraband (s1 = s2 = ±1) and interband (s1 = −s2 = ±1) contributions. In the dynamic limit, when
the momentum goes to zero at finite frequency, the intraband contribution vanishes. For the model of Eq. (9)
the interband matrix elements for spin density Sy = τ y/2 and charge current Jx = (−e)(px/m − ατ y) read
(cid:104)p, sSyp,−s(cid:105) =
(cid:104)p,−sJxp, s(cid:105) = (−e)α(ıs) sin(θ),
(−ıs) sin(θ),
1
2
and the zero-momentum response function becomes
Ryx(ω) =
1
2
(−e)α(cid:88)ps
sin2(θ)
f (Es(p) − µ) − f (E−s(p) − µ)
ω + ıη + Es(p) − E−s(p)
.
(12)
At zero temperature, there are two FSs corresponding to the two spin helicity bands with Fermi momenta
p± = (cid:112)2mµ + (mα)2 ∓ mα. The evaluation of the imaginary part of the zero-momentum response function
leads to (η → 0+)
R(cid:48)(cid:48)
yx (ω) =
e
32α
ω [θ (ω − 2αp−) − θ (ω − 2αp−)] ,
(13)
showing an antisymmetric behavior with respect to the frequency ω. The spectral weight, at positive frequency,
is confined in the range 2αp+ < ω < 2αp−. The two frequencies delimiting the interval are nothing but the spin-
orbit splitting at the two Fermi surfaces. We note, and this will turn out useful when discussing the numerical
calculations, that at finite η, the imaginary part remains finite and acquires a linear-in-frequency behavior around
the origin, whose slope vanishes as η. The Drude weight, according to Eq. (6) can be easily obtained by the KKR
relation (7) to read
DISG = −
π
2
eN0α,
(14)
where N0 = m/(2π) is the single-particle density of states of the 2DEG. For the sake of simplicity we have
chosen units such = 1. There are two features worth noticing. The first is that the Drude weight is controlled
by the sign of the SOC. The second is that the Drude weight arises from the interband transitions between the
spin-orbit split bands. This must be compared with the case of optical conductivity for the electron gas, where
the Drude weight arises from the diamagnetic contribution to the current. In the present case, due to the sum
rule (8), the Drude low-frequency peak yields information about the spectral weight of interband transitions at
finite frequency. To the best of our knowledge this feature has not been noticed before.
In the following of the paper we will consider the effect of disorder, but it is instructive to make here an
heuristic discussion. In the presence of spin-independent disorder, due to the form (10) of the eigenstates, the
electron spin acquires a finite relaxation rate τ−1
. This mechanism, which is known as the Dyakonov-Perel
relaxation, arises because, at each scattering event, the change in momentum also affects the spin eigenstate. As
a result, in the diffusive approximation, ωτ (cid:28) 1, the spin density obeys a Bloch equation51
s
dsy
dt
= −
1
τs
(sy − s0),
(15)
where s0 = −eαN0τ E represents the steady-state nonequilibrium spin polarization8 induced by an applied
electric field E along the x axis and τ is the momentum relaxation scattering time (not to be confused with the
Pauli matrices τ i). According to Ref.51 the Dyakonov-Perel relaxation rate reads
By Fourier transforming (15) to frequency ω, one obtains the SGC in the form
1
τs
=
1
2τ
4α2p2
F τ 2
F τ 2 .
1 + 4α2p2
σISG(ω) = −eαN0
τ
τs
τ−1
s
ω2 + τ−2
s
,
(16)
(17)
which has a Lorentzian lineshape and evolves to a singular contribution in the weak scattering limit τ → ∞.
More precisely by integrating over frequency one obtains
∞
−∞
dωσISG(ω) = −eαN0π
τ
τs
π
2
= −
eαN0,
(18)
which reproduces the Drude weight of Eq. (14). Notice that in the last step we made use of the fact that the
spin relaxation time becomes twice the momentum relaxation time in the weak scattering limit according to
Eq. (16). Eq. (18) seems to violate the sum rule (8), but this is not the case. The form (17) for the SGC has
been derived in the diffusive approximation, which is valid for frequencies ω (cid:28) τ−1 well below the region of the
interband spectral weight. Hence, the form (17) captures only the low frequency spectral weight, which evolves
in the singular Drude weight in the limit of vanishing disorder. The effect of disorder is then to eliminate the
Drude singular contribution and to yield a finite SGC at zero frequency, which is the result of a finite slope of
the imaginary part of the response function. The microscopic approach in the presence of disorder is discussed
in section 6 and details about the frequency dependence are developed in the appendix B.
Around the Γ point the non-interacting part of the Hamiltonian (1) reads
4. EFFECTIVE MODELS
εxy
k = (t1 + 2t3)k2
k = (t1 + t3)k2
εxz
εyz
k = (t1 + t3)k2
x + t2k2
y + t2k2
y + ∆
x + ∆ ,
(19)
(20)
(21)
x + k2
y. The atomic SOC [∼ τ z, cf. Eq. (2)] lifts the degeneracy between xz and yz but leaves
where k2 = k2
the spin degeneracy, cf. Fig. 3. One obtains the new −(+), corresponding to the pairs of bands (3,4) and (5,6)
respectively,
E±σ = ∆ +
(t1 + t2 + t3)k2
1
2
±
1
2(cid:113)(t1 + t3 − t2)2(k2
x − k2
y)2 + 4∆2
aso
and eigenfunctions
with
1
√2(cid:114)1 +
a ≈
xz,↑(cid:105) = ıa+,↑(cid:105) + ıb−,↑(cid:105)
yz,↑(cid:105) = −b+,↑(cid:105) + a−,↑(cid:105)
xz,↓(cid:105) = ıa+,↓(cid:105) + ıb−,↓(cid:105)
yz,↓(cid:105) = b+,↓(cid:105) − a−,↓(cid:105)
(22)
(23)
(24)
(25)
εxz − εyz
(εxz − εyz)2 + 4∆2
1
√2(cid:18)1 +
1
4∆aso
aso ≈
(t1 + t3 − t2)(k2
x − k2
y)(cid:19) , b =(cid:112)1 − a2
In the basis +,↑(cid:105),+,↓(cid:105),−,↑(cid:105),−,↓(cid:105) the asymmetry hopping is given by
HI = √2γ(ky + ıkx)xy,↑(cid:105)(cid:104)+,↑ + h.c.
+ √2γ(ky − ıkx)xy,↓(cid:105)(cid:104)+,↓ + h.c.
+ √2γ(ky − ıkx)xy,↑(cid:105)(cid:104)−,↑ + h.c.
+ √2γ(ky + ıkx)xy,↓(cid:105)(cid:104)−,↓ + h.c.
and the residual coupling of Haso with the xy-level reads
Haso = √2∆asoxy,↑(cid:105)(cid:104)+,↓ + h.c.
+ √2∆asoxy,↓(cid:105)(cid:104)+,↑ + h.c.
x − k2
−
x − k2
(t1 + t3 − t2)(k2
(t1 + t3 − t2)(k2
1
2√2
1
2√2
−
y)xy,↑(cid:105)(cid:104)−,↓ + h.c.
y)xy,↓(cid:105)(cid:104)−,↑ + h.c. .
In the following we restrict to the region close to the Γ point, where ∆aso > tk2, and neglect therefore the two
latter terms in Haso resulting in the effective coupling structure depicted in panel (b) of Fig. 3. We can now
calculate the effective interactions between levels α,β in 2nd order perturbation theory
(cid:104)αH (2)β(cid:105) = −
1
2(cid:88)n (cid:18)
1
En − Eα
+
1
En − Eβ(cid:19) Hα,nHn,β
(26)
and α,β either corresponds to the xy or to the ± levels. For the xy states one finds
(cid:104)xy,↑ H (2)xy,↓(cid:105) ≈ −(cid:104)xy,↑ HI+,↑(cid:105)(cid:104)+,↑ Hasoxy,↓(cid:105)
− (cid:104)xy,↑ Haso+,↓(cid:105)(cid:104)+,↓ HIxy,↓(cid:105)
∆
∆
and similarly for (cid:104)xy,↓ H 2xy,↑(cid:105). Inserting the matrix elements yields an effective Rashba SOC ∼ kyτ x − kxτ y
H SOC
xy = −4
γ∆aso
∆ (cid:18)
0
ky + ıkx
ky − ıkx
0
(cid:19) = −αxy(τ xky − τ ykx)
(27)
with a negative coupling constant with αxy = 4γ∆aso/∆.
From Fig. 3 one can see that the same matrix elements also mediate the 2nd order interaction between the
+, σ and +,−σ states. Since in this case the denominator in Eq. (26) is negative we obtain a positive coupling
α+ = 4γ∆aso/∆ for the E+ states
H SOC
E+ = 4
γ∆aso
∆ (cid:18)
0
ky + ıkx
ky − ıkx
0
(cid:19) = α+(τ xky + τ ykx) .
(28)
Figure 3. Level structure and interactions of the three-band hamiltonian. Interactions of Haso ∼ ∆aso Eq. (2) are shown
in red and those of the asymmetry hopping HI Eq. (3) are indicated in blue. The red dashed lines correspond to a atomic
SO interaction which around the Γ-point (i.e. ∼ tk2 < ∆aso) is much smaller than the matrix elements represented by
the solid lines. Panel (a) corresponds to the original Hamiltonian whereas in (b) the atomic SOC between xz and yz has
been diagonalized.
Moreover the off-diagonal matrix elements in Eq. (28) are c.c. to those of Eq. (27) which means that the +, σ
and +,−σ states are interacting via a Dresselhaus coupling ∼ kyτ x + kxτ y.
The effective interactions between −, σ and −,−σ can be again obtained from 2nd order perturbation theory
in the limit tk2 < ∆aso which now involves the matrix elements represented by the dashed lines in Fig. 3. The
resulting effective coupling reads
γ(t1 + t3 − t2)(k2
x − k2
y)
0
ky + ıkx
−
H SOC
x − k2
and therefore corresponds to a linear Rashba SOC but with a coupling constant ∼ (k2
ky − ıkx
= −
y)(τ xky − τ ykx)
x − k2
y).
∆
0
(cid:19) = −β(k2
(cid:18)
5. THE CLEAN LIMIT
In this section we evaluate the Drude weight for the effective models discussed in section 4.
5.1 xy bands
In this case the eigenvalues and eigenvectors corresponding to the Hamiltonian (27) read
(29)
(30)
Exy
± =
k2
2m ± αxyk, ±(cid:105) =
1
√2(cid:18) ∓ıe−ıθ
1
(cid:19)
with px = cos(θ) and py = sin(θ). As for the Rashba model (9), the spin operator is simply the Pauli matrix
Sy = τ y/2 and the charge current is similar to the 2DEG case Jx = (−e)(kx/mτ 0 + αxyτ y). The interband
matrix elements read
(cid:104)k, sSyk,−s(cid:105) =
1
2
is sin(θ), (cid:104)k,−sJxk, s(cid:105) = −is sin(θ)(−e)αxy
and the response function (in the zero-temperature limit) gives
R(cid:48)
yx(ω → 0) =
1
2
(−e)αxy(cid:88)ps
sin2(θ)
θ(Exy
s (p) − µ) − θ(Exy
s (p) − Exy
Exy
−s(p)
−s(p) − µ)
=
1
2
(−e)αxyN0,
which leads to the Drude weight
with an opposite sign as compared to the 2DEG case of Eq. (14).
DISG
xy =
π
2
eαxyN0
(31)
a)xyxyxyxyxzxzyzyz+−−+b) 5.2 E− bands
In this case the eigenvalues and eigenvectors corresponding to the Hamiltonian (29) read
E−
± =
k2
2m ± βζ k3, ±(cid:105) =
1
√2(cid:18) ∓ı ζ
e−ıθ
ζ
1
(cid:19)
(32)
where ζ = k2
x −
y)τ y/2, while the charge current has a more complicated structure as compared to the 2DEG case Jx =
k2
In this case the spin operator reads Sy = −γ(k2
y with kx = cos(θ) and ky = sin(θ).
x − k2
(−e)(cid:0) kx
m τ 0 − 2βkxkyτ x + β(3k2
x − k2
sin(θ)
y)τ y(cid:1). The interband matrix elements read
ζ
(cid:104)k, sτ yk,−s(cid:105) = ıs
ζ
ζ
(cid:104)k,−sτ yk, s(cid:105) = −ıs
ζ
ζ
(cid:104)k, sτ xk,−s(cid:105) = ıs
cos(θ)
ζ
ζ
(cid:104)k,−sτ xk, s(cid:105) = −ıs
ζ
cos(θ).
sin(θ)
In the response function
R(cid:48)
xy(0) = −(−e)(cid:88)k,,s
= (−e)
γ
2
0
2π
2π
1
2
(−γk2)(k2
dθ
2π
(k2
x − k2
y)2
γ
= (−e)
2
= (−e)γk2
0
F βk2
dθ
2π
x − k2
(k2
y)2
F N0(cid:18)−
4(cid:19)
1
y)k2(cid:104)−2βk2
x
k2
k+
dk
2π
k−
+ − k3
k3
−
6π
x − k2
k2
y
ζ
k2
y
ζ
k2
y + β(3k2
x
k2
y − k4
y)(cid:105) θ(µ − E−s (k)) − θ(µ − E−
2sβζk3
−s(k))
the factors ζ disappear and the Drude weight reads
DISG
− = (−e)(cid:16) π
4
γp2
F βp2
F N0(cid:17) .
5.3 E+ bands
In this case the eigenvalues and eigenvectors corresponding to the Hamiltonian (28) read
(33)
(34)
with kx = cos(θ) and ky = sin(θ). In this case the spin operator reads Sy = γ(k2
x − k2
y)τ y/2, while the charge
current is Jx = (−e)(cid:0) px
1
Exy
± =
k2
2m ± α+k, ±(cid:105) =
1 (cid:19)
√2(cid:18) ∓ıeıθ
m τ 0 + α+τ y(cid:1). The interband matrix elements are
(cid:104)k, sτ yk,−s(cid:105) = −ıs sin(θ),
(cid:104)k,−sτ yk, s(cid:105) = ıs sin(θ).
The response function is
R(cid:48)
xy(0) = −(−e)γ(cid:88)k,s
k2(k2
x − k2
y)k2
y
= −(−e)
= (−e)γk2
2π
dθ
2π
γ
2
x − k2
(k2
4(cid:19)
1
0
F α+N0(cid:18)−
s (k)) − θ(µ − E+
−s(k))
2sα+k
α+
2
θ(µ − E+
k+
k2dk
2π
y)k2
y
k−
and the Drude weight is
DISG
+ = (−e)(cid:16) π
4
γp2
F α+N0(cid:17) .
(35)
6. THE DISORDERED LIMIT
It is well known that in the presence of disorder, the Drude weight in the formula for the optical conductivity
is suppressed and the spectral weight goes into the regular part.
In the Drude model, the regular part, as
function of the frequency, has a Lorentzian shape whose width is controlled by the scattering rate τ−1 (not to
be confused with the Pauli matrices). Such a transfer of spectral weight from the singular to the regular part
occurs also in the case of the SGC. To this end we need to introduce disorder in our model. This will be done in
the numerical computation of the next section, whereas in this section we introduce disorder within the effective
models derived in section 4 by using the standard diagrammatic impurity technique. This technique has been
applied to the Rashba model for the evaluation of the ISG effect,8 anisotropy magnetoresistance47, 50 and spin
Hall effect.48 We review here the basic aspects by focusing on the case of the xy-bands, which is equivalent to the
Bychkov-Rashba model in the 2DEG. By following the standard procedure, disorder is introduced as a random
potential V (r), with zero average (cid:104)V (r)(cid:105) = 0 and white-noise correlations (cid:104)V (r)V (r)(cid:105) = niu2δ(r − r(cid:48)), with ni
being the impurity concentration. By Fermi golden rule, one associates a scattering rate τ−1 = 2πniu2N0, where
N0 is the single-particle density of state previously introduced in Eq. (14). We will consider the weak-disorder
limit which is controlled by the small parameter (EF τ )−1, with EF the Fermi energy.
In the diagrammatic
impurity technique, the first step is the introduction of the irreducible self-energy in the self-consistent Born
approximation for the electron Green function.
6.1 The case of the Exy bands
The Green function, due to the SOC of the lowest pair of bands H SOC
matrices as G = G0τ 0 + G1τ x + G2τ y and explictly reads
xy
of Eq. (27), can be expanded in Pauli
G(, k) =
G+(, k) + G−(, k)
2
τ 0 − (τ xky − τ y kx)
G+(, k) − G−(, k)
2
where
and the self-energy has the form
G±(, k) =(cid:2) − Exy
± (k) − Σ()(cid:3)−1
,
Σ() = ∓
ı
2τ
τ 0,
(36)
(37)
(38)
the minus and plus signs applying to the retarded (R) and advanced (A) sectors, respectively. The scattering
time τ entering Eq. (38) is exactly the one required by the Fermi golden rule.
It is worth noticing that the
self-energy is proportional to the identity matrix in the spin space.50 Once the Green function is known, we may
compute the SGC by means of the Kubo formula
Figure 4. Ladder diagrams for the determination of the dressed vertex. The gray-filled triangle represents the infinite
sum of diagrams, which results from repeated scattering. The solid lines with arrows are Green function propagators for
electrons, whereas the dashed lines represent the operation of impurity average.
σISG =
1
2π(cid:10)Tr(cid:2)SyGRJxGA(cid:3)(cid:11)dis av
(39)
which can be obtained from the expression (5), after averaging over the disorder configurations, represented as
(cid:104). . .(cid:105)dis av. In the above the Tr . . . symbol involves all degrees of freedom, i.e. spin and space coordinates. The
disorder average in Eq. (39) enters in two ways. The first is to use the disorder-averaged Green function given in
Eq. (36). The second is the introduction, to lowest order in the expansion parameter (EF τ )−1, of the so-called
ladder diagrams, which lead to vertex corrections. The vertex corrections procedure can be performed either for
the spin or charge vertex of Eq. (39). Here we consider the vertex correction for the charge current vertex. The
dressed vertex Jx obeys the Bethe -- Salpeter equation
Jx = Jx + niu2(cid:88)k
GR(, k)JxGA(, k),
(40)
which results from the infinite summation of ladder diagrams, as shown in Fig. 4. In terms of the dressed vertex
the SGC reads
σISG =
1
2π(cid:88)k
tr(cid:104)SyGR(, k)JxGA(, k)(cid:105) ,
(41)
where now the lower case trace symbol involves the spin degrees of freedom only. The problem is then reduced
to the solution of the Bethe -- Salpeter equation (40) and to the evaluation of the bubble (41). In general the
Bethe -- Salpeter equation is an integral equation. However, in the present case of white-noise disorder, the Bethe --
Salpeter equation becomes an algebraic one, even though still having a spin structure. In the appendix A we
provide the details of the solution of Eq. (40), which leads to
which shows that the vertex corrections exactly cancel the interband matrix elements of the charge current
vertex. As a result, the evaluation of Eq. (41) leads to
Jx = (−e)
kx
m
,
(42)
σISG
xy = eN0αxyτ,
(43)
which must be compared with the Drude weight evaluated in Eq. (31).
6.2 The case of the E− bands
According to the analysis of appendix A, the dressed charge current vertex reads
Jx = (−e)(cid:20) kx
m
The evaluation then of Eq. (41) leads to
τ 0 − 2βkxkyτ x + β(3k2
x − k2
y)τ y +
1
4
βp2
F τ y(cid:21) .
Γ(4)≡L=(c)=+(a)=+++...(b)=+++...p+q,αp,γp′+q,δp′,βϵn+ωνϵn σISG
− = −
5
8
eN0γβp4
F τ,
(44)
which has a sign opposite to that of the Exy bands. In Eq. (44) the combination βp2
SOC, whereas γp2
F is the spin dressing factor accounting for the interactions in the original model.
F plays the role of an effective
6.3 The case of the E+ bands
According to the analysis of appendix A, the dressed charge current vertex reads
The evaluation then of Eq. (41) leads to
Jx = (−e)
kx
m
τ 0.
which shows again a change of sign with respect to that of the E− bands. Also here the combination γp2
spin dressing factor accounting for the interactions in the original model.
F is the
σISG
+ = (γp2
F )eN0α+τ,
(45)
7. THE NUMERICAL APPROACH
In this section we present our numerical results. The starting point is the response function defined in Eq. (5),
which may be expressed as follows
Ryx(ω) =
1
N (cid:88)k,p
(fp − fk) (cid:104)pSyk(cid:105)(cid:104)kJxp(cid:105)
ω + iη + Ep − Ek
,
(46)
where k and p are quantum numbers labelling the eigenstates of the Hamiltonian. For instance, in the absence
of disorder, the index k includes the crystal momentum, the orbital and spin degrees of freedom. The symbol fk
stands for the Fermi function evaluated at the energy of the eigenstate k. In Eq. (46) N is the number of lattice
sites. The numerical evaluation is performed on a finite system and then it is convenient to separate from the
outset the Drude singular weight from the regular part as follows
DISG = −
π
N (cid:88)k,p
σISG
reg = lim
ω→0P
R(cid:48)(cid:48)
yx (ω)
ω
= −
fp − fk
Ep − Ek (cid:60)(cid:104)pSyk(cid:105)(cid:104)kJxp(cid:105),
N (cid:88)k,p
Ep − Ek (cid:61)(cid:104)pSyk(cid:105)(cid:104)kJxp(cid:105)
fp − fk
iη + Ep − Ek
1
(47)
(48)
,
where (cid:60) and (cid:61) indicate the real and imaginary parts.
Fig. 5 shows the behavior of the spin-orbit split gap at the Fermi surface. Inspection of Fig. 5 reveals that for
µ = 0.3 eV the gap has extrema at energies ∆ ≈ 0.005 and 0.009 eV which are expected to dominate the response
due to the "saddle-point" character of the corresponding states as discussed below. For µ = 0.7 , as shown in
Fig. 2, all bands are occupied and all the gaps will appear in the response function. In particular the pair of
bands (1,2) contributes to the gap at energies ∆ ≈ 0.015 eV, the pair of bands (3,4) at energies ∆ ≈ 0.005−0.015
eV, and the pair of bands (5,6) at energies ∆ ≈ 0.
Fig. 6 shows the frequency dependence of the real and imaginary parts of the response function Ryx(ω) for
the three chemical potentials µ = 0.3 eV, µ = 0.425 eV and µ = 0.7 eV. The underlying ground state is for a
homogeneous system but we investigate the influence of the particle-hole lifetime parameter η. As compared with
the approach discussed in Sec. 6 this mimics the inclusion of momentum relaxation without considering vertex
corrections. For µ = 0.3 eV, when only the lowest pair of bands is occupied, one may interpret the observed
behavior in terms of the Rashba model of Eq. (9). The low energy structure is determined by transitions across
Figure 5. Size of the spin-orbit split gap around the Fermi surface for µ = 0.3 eV (a) and µ = 0.7 eV (b,c). This is obtained
by determining the cut kF of each band with µ and then calculating the energy difference to the 'other' SO split band at
the same kF . If the SO interaction has some significant momentum dependence around kF the gap determined for each
of the two bands from a pair may slightly differ as in panel (a). The angle Θ is defined with respect to the kx-axis.
the spin-orbit split gap of the same t2g band. In fact, it is exactly in this energy range that the imaginary part of
Ryx(ω) develops a peak structure as discussed in Eq.(13). In the clean system, i.e. lifetime parameter η → 0, the
imaginary part vanishes for energies below the minimum gap excitations and therefore the slope of R(cid:48)(cid:48)
yx(ω), which
determines the regular ISG response σISG
yx,reg, is zero, whereas the limiting value of the real part fixes the Drude
weight of the singular contribution. As shown in Fig. 6 (panel (a)) a finite η (or, similarly, a finite temperature)
broadens the excitations and therefore induces a finite slope of R(cid:48)(cid:48)
yx(ω) at ω = 0 leading thus to a finite ISG
response. This is evidenced by making η larger in Fig. 6: the red curve is for η = 10−5, while the blue one for
η = 10−3. The fact, that the ISG response vanishes for a clean system is consistent with the analysis in Ref.41
and with the discussion at the end of section 3. According to the KKR (7), the sign of the imaginary part of
the ISG response function is determined by the sign of the effective Rashba SOC. The negative sign shown by
the numerical evaluation of Fig. 6 agrees with the sign found for the coupling −αxy in the effective model for the
lowest pair of xy bands in Eq. (31). We remind that the Drude weight is determined by the zero-frequency value
of the real part, which is obtained from the imaginary part via the KKR (7).
For the chemical potential µ = 0.425 eV, close to the Lifshitz point, all the bands are occupied and the
imaginary part of the response function gets contributions from the interband transitions across the spin-orbit
split gaps of all the pairs of bands as well as from the interband transitions involving different pairs of bands
simultaneously. In panel (b) of Fig. 6 this is evidenced by showing, together with the full imaginary part (red line)
also the contribution of the individual pairs of bands: (1,2) (green line), (3,4) (blue dashed line) and (5,6) (yellow
line). From this we conclude that the large spectral weight at energy ω = 0.02 is due to interband transition
between different pairs of bands. The green curve shows that the contribution due exclusively to the lowest pair
of bands (1,2) is still around the same energy as in panel (a) and hence the behavior of this pair of bands is still
2bandscuttheFermilevelforwhichthegapsareshowninFig.2b,c.Thepairofbandscorrespondingtothelowesteigenvalues(1,2)hasanopenFermisurfaceatµ=0.7(cf.Fig.1)andtheSOgapvanishesattheantinodalpoints.ThemiddleanduppermostpairofbandshaveafiniteSOgapallaroundtheFermisurface.Fortheuppermostpairitismaximalalongthediagonaldirec-tionwhereasforthemiddlepairitisminimalalongthediagonalandattheantinodalpoints.-π/20π/2-π/20π/2-π/20π/2-π/20π/2µ=0.7 eVµ=0.425 eVµ=0.3 eVFIG.1:FermisurfacesforthechemicalpotentialsindicatedbygreylinesinFig.??.WeproceedbycalculatingtheinverseEdelsteine↵ect(IEE)whichisdefinedviatheresponsefunction[8]IEE(!)=hhJx;Syii!i(!+i⌘)(4)00,0050,01∆ [eV]band 1band 200,0050,010,0150,02∆ [eV]band 3band 3-1-0,500,51Θ/π00,0050,010,0150,02∆ [eV]a) ∆(µ=0.3 eV)b) ∆(µ=0.7 eV)c) ∆(µ=0.7 eV)bands 1,2bands 3,4bands 5,6band 1band 2FIG.2:Sizeofthespin-orbitsplitgaparoundtheFermisur-faceforµ=0.3eV(a)andµ=0.7eV(b,c).ThisisobtainedbydeterminingthecutkFofeachbandwithµandthencal-culatingtheenergydi↵erencetothe'other'SOsplitbandatthesamekF.IftheSOinteractionhassomesignificantmo-mentumdependencearoundkFthegapdeterminedforeachofthetwobandsfromapairmayslightlydi↵erasinpanel(a).Theangle⇥isdefinedwithrespecttothekx-axis.withhhJx;Syii!=1NXk,p(fpfk)hpSykihkJxpi!+i⌘+EpEk(5)whereJxisthetotalchargecurrent(obtainedfromtheusualPeierlssubstitution)andSydenotesthetotaly-polarizedspin.OnefindsJx=Xk[2t1sin(kx)+4t3cos(ky)sin(kx)]c†k,xyck,xyXk2(t1+t3)sin(kx)c†k,xzck,xzXk2t2sin(kx)c†k,yzck,yz+2iXkcos(kx)[c†k,xyck,yzc†k,yzck,xy]andforthespinSy=12Xk,,0↵=xy,xz,yzc†k,↵⌧y0ck0,↵.(6)TherealpartiscomposedofaIEE'Drude'andareg-ularpart<IEE(!)=DIEE(!)+=hhJx;Syii!!(7)withDIEE=⇡<hhJx;Syii!whichforourcleansys-temisfinite(cf.below)butisexpectedtovanishinthepresenceofdisorder. well described by the effective Rashba model of Eq.(27). On the other hand, the inset around zero energy in
panel (b) shows how the low energy contribution is dominated by both the pairs of bands (3,4) and (5,6), which
at this chemical potential have a small Fermi surface and a small spin-orbit split gap. Notice that the sign of
the imaginary part is opposite to that of bands (1,2), indicating an opposite sign for the Drude spectral weight
in the limit of vanishing lifetime parameter η in agreement with Eqs.(33) and (35). Furthermore one may notice
that for the small but finite value used for the lifetime parameter η both pairs of bands yield a finite positive
slope at zero frequency. Whereas the regular part at zero frequency has the sign due to the pair or pairs of bands
with the lowest gap, the zero-frequency value of the real part, which is associated to the Drude spectral weight,
is obtained from the integrated spectral weight of all the interband transitions. As a consequence, also interband
transitions at high energy may contribute provided they have a strong spectral weight, which must compensate
the big frequency denominator of the KKR relation (7). As it is apparent from panel (b), close to the Lifshitz
point, the very small value of the gap of the pairs of bands (3,4) and (5,6) is sufficient to determine a positive
value of the zero-frequency real part.
For the chemical potential µ = 0.7 eV as well, the energy response is determined by the gap structure of all
the bands (1,2), (3,4) and (5,6), as is evident from Fig. 2, even though now we are far away from the Lifshitz
point. As shown in panel (c) of Fig. 6 and the inset at zero frequency, the peak coming from the smallest gap
excitations at ω ≈ 0.0001 eV belongs to the pair of bands (5,6) with the smaller kF . The next higher excitation
comes from the pair of bands (3,4). As a result at a finite value of the lifetime parameter, the regular part of
the ISG response is finite and positive. However, in this case, in contrast to what happens close to the Lifshitz
point, the opposite-in-sign spectral weight of the interband transitions at higher energies is sufficiently strong to
drive the sign of the real part to a negative value.
−5 eV . In panel (a), the additional blue line is for η = 10
Figure 6. Frequency dependent real (black line) and imaginary part (red line) of the spin-current correlation function
Ryx(ω) evaluated for chemical potentials µ = 0.3 eV (a), µ = 0.425 eV (b) and µ = 0.7 eV (c) and lifetime parameter
−3 eV and the slope of the imaginary part at ω = 0
η = 5 · 10
defines the SGC σISG
reg . In panel (b), the individual contribution of the pair of bands (1,2) (green line), (3,4) (blue dashed
line) and (5,6) (yellow line) is also shown. The inset details the behavior around ω = 0, dominated by the pairs of
bands (3,4) and (5,6). In panel (c) the individual contribution of the different pairs of bands is shown as in panel (b).
The inset around ω = 0 evidences the contribution from the pair (5,6) at two different values of the lifetime parameter
−5(yellow line), whereas the inset around ω = 0.075 shows the contribution from the
η = 10
pair of bands (3,4) at η = 10
−4(brown line) and η = 10
−4 (blue dashed line) and η = 10
−5(magenta line).
The analysis carried out in Fig. 6 can be extended to all values of the chemical potential and the result is
reported in Fig. 7. Panel (a) of Fig. 7 shows the full Drude spectral weight together with the contribution of
the individual pairs of bands at T = 10 K as a function of the chemical potential. The Drude part, which is
associated to the integrated imaginary part of the response, does not depend significantly on the temperature
and on the lifetime parameter η (Fig. 7 is for η = 1 · 10−6 ). Close to the Γ points of all the bands one finds a
negative Drude coefficient for the pair of bands (1,2) and a positive coefficient for the pairs of bands (3,4) and
(5,6). This is in agreement with results of the effective model discussed in section 4.
Panel (b) of Fig. 7 reports on the other hand the regular part of the ISG response as function of the chemical
potential. For small lifetime parameter η = 1 · 10−6 (inset) the response is only significant around the energies
where the DOS displays a van-Hove singularity. In particular, the response at low chemical potentials is sup-
pressed because there the spin-orbit split gap is large and η = 1· 10−6 is not sufficient to broaden the excitations
up to ω = 0. On the other hand, for η = 1 · 10−4 (main panel) one now observes a ISG response at all energies
-0,00200,002<Sy, Jx>Re Im -0,02-0,0100,010,02ω [eV]-0,0200,02<Sy , Jx>Im 1,2Im 3,4-0,02-0,0100,010,02<Sy, Jx>0Im 5,6a) µ=0.3 eVc) µ=0.7 eVb) µ=0.425 eV and also the sign change upon crossing around the Lifhitz point as discussed for panel (b) of Fig. 6. Such a sign
change has been also found in the experiment of Ref.26
It can also be seen that the total ISG regular response is given by the sum of the three contributions coming
from the interband transitions between each of the three pairs of the spin-orbit split bands. In fact, we have
seen that a finite σISG requires a broadening of the same order than the energy of the contributing low energy
excitation. Therefore interband transitions between different pairs of bands cannot contribute due to their high
excitation energies.
Since we investigate a clean system, we also obtain a finite value for the Drude part DISG which we checked
not to depend on the system size but is a robust result. In the presence of (real) disorder we expect DISG = 0
which then guarantees the stationarity of the solution.
Figure 7. Top panel: Drude coefficient at T = 10 K (black) of the ISG response and the contribution of the individual
bands. Middle panel: Regular part of the inverse ISG response as a function of chemical potential for lifetime parameter
−4 and the contribution of the individual bands. In both panels the DOS is shown in grey for comparison. The
η = 1 · 10
−3
−6 and T = 10. Lowest panel: Regular part for η = 1· 10
inset to the middle panel reports the regular part for η = 1· 10
and different temperatures. The inset to the lowest panel resolves the region around the Lifshitz point with a significant
temperature dependence. Calculations have been done for a lattice with 6354 × 6354 k points.
To implement the effect of disorder scattering we perform the calculation of the SGC on finite lattices. In
order to reduce the finite size effects we average over twisted boundary conditions, i.e. for a Lx × Ly lattice we
set
with Φx,y ∈ [0, 2π] and we typically average over 50 randomly chosen (Φx, Φy). The inset to Fig. 8 demon-
strates that the averaged finite lattice computation reproduces the doping dependent SGC of the 'infinite' lattice
calculation.
Ψ(Ri)(cid:105) = eıΦx,yΨ(Ri + Lx,y)(cid:105)
400,511,522,5-8-4048DOSDOS00,511,522,5chemical potential-0,01-0,00500,0050,01Drude coefficient bands 1,2bands 1,2bands 5,6full responsea)01200,51σIEE00,511,522,5chemical potential04812DOSDOS00,511,522,5chemical potential00,2σIEET=10 KT=300 K123456b)η=1e-6η=1e-400,511,522,5chemical potential-0,4-0,3-0,2-0,100,1σieekT=10kT=100kT=3000,500,1kT=10kT=100kT=300FIG.4:Toppanel:DrudecoecientatT=10K(black)oftheEdelsteinresponseandthecontributionoftheindividualbands.Middlepanel:RegularpartoftheinverseEdelsteinresponseasafunctionofchemicalpotentialforlifetimepa-rameter⌘=1e4eVandthecontributionoftheindividualbands.InbothpanelstheDOSisshowningreyforcompar-ison.Theinsettothemiddlepanelreportstheregularpartfor⌘=1e6eVandT=10K.Lowestpanel:Regularpartfor⌘=1e3eVanddi↵erenttemperatures.TheinsettothelowestpanelresolvestheregionaroundtheLifshitzpointwithasignificanttemperaturedependence.Calculationshavebeendoneforalatticewith6354⇥6354k-points.putingthespinateachmomentumpointoftheFSasS↵(p,kF)=Xn,,0⇤n,(p,kF)⌧↵,0n,0(p,kF)(10)wheren,0(p,kF)aretheeigenfunctionsofthesystematmomentumkFandtheindex'p'labelsthe6eigenstates.Theindicesn=xy,xz,yzandlabeltheorbitalanditsspin.Thenthechiralityofthep-thbandcanbeobtainedfrom↵(p)=asin[kF⇥S(p,kF)]ezkFS(p,kF.(11)Fig.5showsthechiralitiesforeachpairofbandsatselectedchemicalpotentialsandthecorrespondingFermisurfaces.ForthelowestpairofbandstheFermisurfacechangesfromelectrontohole-likebetweenµ=0.5andµ=0.6,however,thecorrespondingchiralitiesareal-waysconfinedto↵⇡±⇡/2withoutanysignchangein↵.Forthemiddlepairofbandsthechiralityalsostartsat↵⇡±⇡/2forlowµbutthenonaveragebecomessmallerwithincreasingchemicalpotentialandeventu-allychangessignforµ⇡1.5.Alsothechiralitiesfortheuppermostpairofbandschangessignuponincreasingthechemicalpotential.Hereweobservethataroundthediagonaldirectionthechiralitiesofbothbandsdonotjustdi↵erinsignsothatalongthediagonalsaRashba-typedescriptionfortheuppermostbandsfails.InanycasethereisnodirectionrelationbetweenthedopingdependenceofthechiralitiesandthecontributionoftheindividualpairofbandstotheEdelsteincoecientasshowninFig.4.Foreachpairofbandswecancalculatethek-spaceresolvedcontributiontotheEdelsteincoecientwhichisshowninFig.6.Forexample,theuppermostrowshowsthecontri-butionfrombands1,2atchemicalpotentialsµ=0.1,0.5,0.6.Atthelowestchemicalpotentialµ=0.1thiscontributionisnegativeandlargest(inmagnitude)aroundtheantinodalregionswithkx=0,ky=±pi.However,whentheFSbecomesholelikethisnegativecontributionisovercompensatedbyaverylargeposi-tivecontributionwhichisconfinedtotheantinodalre-gionsat(kx=±⇡,kysmall)(indicatedbythearrows)wheretheSOgapvanishes.Inthisregionthechargecurrentoperatorhasonlycontributionsfromtheassy-metrichopping⇠whereasattheantinodalregionswithkx=small,ky=±⇡)alsotheconventionalhop-pingcontributestothechargecurrentoperator.SimilarlytheotherpanelsindicatethepositiveandnegativecontributionsforthemiddleanduppermostpairofbandswhichuponintegrationyieldtheEdelsteincon-tributionfortheindividualpairofbandsasshowninFig.4.TheproblemisthatthissignchangeisnotdirectlyrelatedtoneitherachangeinchiralitynortheshapeoftheFermisurface.00,511,522,5-8-4048DOSDOS00,511,522,5chemical potential-0,01-0,00500,0050,01Drude coefficient bands 1,2bands 3,4bands 5,6full responsea)400,511,522,5-8-4048DOSDOS00,511,522,5chemical potential-0,01-0,00500,0050,01Drude coefficient bands 1,2bands 1,2bands 5,6full responsea)01200,51σIEE00,511,522,5chemical potential04812DOSDOS00,511,522,5chemical potential00,2σIEET=10 KT=300 K123456b)η=1e-6η=1e-400,511,522,5chemical potential-0,4-0,3-0,2-0,100,1σieekT=10kT=100kT=3000,500,1kT=10kT=100kT=300FIG.4:Toppanel:DrudecoecientatT=10K(black)oftheEdelsteinresponseandthecontributionoftheindividualbands.Middlepanel:RegularpartoftheinverseEdelsteinresponseasafunctionofchemicalpotentialforlifetimepa-rameter⌘=1e4eVandthecontributionoftheindividualbands.InbothpanelstheDOSisshowningreyforcompar-ison.Theinsettothemiddlepanelreportstheregularpartfor⌘=1e6eVandT=10K.Lowestpanel:Regularpartfor⌘=1e3eVanddi↵erenttemperatures.TheinsettothelowestpanelresolvestheregionaroundtheLifshitzpointwithasignificanttemperaturedependence.Calculationshavebeendoneforalatticewith6354⇥6354k-points.putingthespinateachmomentumpointoftheFSasS↵(p,kF)=Xn,,0⇤n,(p,kF)⌧↵,0n,0(p,kF)(10)wheren,0(p,kF)aretheeigenfunctionsofthesystematmomentumkFandtheindex'p'labelsthe6eigenstates.Theindicesn=xy,xz,yzandlabeltheorbitalanditsspin.Thenthechiralityofthep-thbandcanbeobtainedfrom↵(p)=asin[kF⇥S(p,kF)]ezkFS(p,kF.(11)Fig.5showsthechiralitiesforeachpairofbandsatselectedchemicalpotentialsandthecorrespondingFermisurfaces.ForthelowestpairofbandstheFermisurfacechangesfromelectrontohole-likebetweenµ=0.5andµ=0.6,however,thecorrespondingchiralitiesareal-waysconfinedto↵⇡±⇡/2withoutanysignchangein↵.Forthemiddlepairofbandsthechiralityalsostartsat↵⇡±⇡/2forlowµbutthenonaveragebecomessmallerwithincreasingchemicalpotentialandeventu-allychangessignforµ⇡1.5.Alsothechiralitiesfortheuppermostpairofbandschangessignuponincreasingthechemicalpotential.Hereweobservethataroundthediagonaldirectionthechiralitiesofbothbandsdonotjustdi↵erinsignsothatalongthediagonalsaRashba-typedescriptionfortheuppermostbandsfails.InanycasethereisnodirectionrelationbetweenthedopingdependenceofthechiralitiesandthecontributionoftheindividualpairofbandstotheEdelsteincoecientasshowninFig.4.Foreachpairofbandswecancalculatethek-spaceresolvedcontributiontotheEdelsteincoecientwhichisshowninFig.6.Forexample,theuppermostrowshowsthecontri-butionfrombands1,2atchemicalpotentialsµ=0.1,0.5,0.6.Atthelowestchemicalpotentialµ=0.1thiscontributionisnegativeandlargest(inmagnitude)aroundtheantinodalregionswithkx=0,ky=±pi.However,whentheFSbecomesholelikethisnegativecontributionisovercompensatedbyaverylargeposi-tivecontributionwhichisconfinedtotheantinodalre-gionsat(kx=±⇡,kysmall)(indicatedbythearrows)wheretheSOgapvanishes.Inthisregionthechargecurrentoperatorhasonlycontributionsfromtheassy-metrichopping⇠whereasattheantinodalregionswithkx=small,ky=±⇡)alsotheconventionalhop-pingcontributestothechargecurrentoperator.SimilarlytheotherpanelsindicatethepositiveandnegativecontributionsforthemiddleanduppermostpairofbandswhichuponintegrationyieldtheEdelsteincon-tributionfortheindividualpairofbandsasshowninFig.4.TheproblemisthatthissignchangeisnotdirectlyrelatedtoneitherachangeinchiralitynortheshapeoftheFermisurface. Figure 8. Inset: Comparison of the ISG response for a homogeneous (V0 = 0) 24 × 24 lattice (red symbols) with the
calculation for a 3762 × 3762 lattice (black line). Main panel: Averaged orbital occupation as a function of chemical
potential for a 24 × 24 lattice and disorder potential V0 = 0.1 eV. Further parameters: temperature T = 100 K, η =
1 · 10
−3 eV.
Disorder is introduced by a random local potential
V =(cid:88)i,σ
Vi (xyi,σ(cid:105)(cid:104)xyi,σ + xzi,σ(cid:105)(cid:104)xzi,σ + yzi,σ(cid:105)(cid:104)yzi,σ)
with Vi randomly chosen on each site in the interval [−V0, +V0]. We then compute the SGC at some specified
values of the chemical potential and average over phases Φx,y and the disorder configurations. The main panel of
Fig. 8 demonstrates that for V0 = 0.1 eV the averaged orbital occupations are still well defined for a given value
of the chemical potential.
According to the analytical results of section 6, in the presence of disorder, the SGC is positive for the pair of
bands (1,2) due to the dxy orbitals (cf. Eq.(43)), is negative for the pair of bands (3,4) (cf. Eq.(44)), associated
to the effective model of bands E−, finally is positive again for the pair of bands (5,6) (cf. Eq.(45)), associated
with bands E+. One then would expect a double change of sign as the chemical potential enters the bottom
of the different pairs of bands. The numerical analysis of the clean limit with inclusion of the effect of all the
bands has shown a more complex behavior. Close to the Γ point, the behavior of the regular SG response at
zero frequency of the individual bands is well described by the effective model. Instead, the Drude weight, which
also includes all interband transitions, cannot be simply interpreted in terms of the individual contributions of
the different pairs of bands.
Fig. 9 shows the SGC of the disordered system for four different temperatures, obtained by averaging over 50
disorder configurations and over 100 phase pairs (Φx, Φy) for each disorder realization. To estimate the effective
strength of the disorder, we have evaluated the frequency-dependent electrical longitudinal conductivity, whose
Lorentzian lineshape allows to extract the eleastic scattering time τ , used in the analytical theory of section
6. For two chemical potentials µ = 0.2 eV and µ = 0.6 eV, below and above the Lifshitz point, the estimated
scattering time is of the order of 10−2 ps, which corresponds to a level broadening of the order of 10−5 eV. In the
presence of the SOC a crucial parameter is the ratio between the spin-orbit split gap and the disorder-induced
broadening. Keeping in mind the typical size of the spin-orbit split gap shown in Fig. 5, one may conclude
that the condition of weak scattering limit is satisfied. At zero temperature, the black line in Fig. 9 shows that
the SGC changes sign twice. One sees that the two sign changes occur in a very restricted range of chemical
potentials, when first the pair of bands (3,4) starts to be occupied and then also the pair of bands (5,6) becomes
occupied as well. One then is tempted to associate the positive sign with the initial filling of bands (3,4) and
the negative sign with the filling of bands (5,6) in agreement with the analytical results of Eqs.(44) and (45).
The effect of the temperature reduces the value of the SGC. This happens when the energy scale associated with
the temperature becomes larger than disorder broadening, which is the situation already at 100 K. At finite
00,10,20,30,40,5chemical potential00,10,20,30,40,5orbital densityxy-statesxz-statesyz-states00,5chem. potential-0,2-0,100,10,2σieeV0=0.1 eVV0=0 eV Figure 9. Regular part of the SGC response as a function of chemical potential. Disorder potential is V0 = 0.1 eV and
calculations are performed on 24 × 24 lattices.
temperature the SGC is likely to be an effective average over its value at different chemical potentials, and hence
over the values associated to the different pairs of bands. As a result, at the highest temperature 300 K, there
is only one sign change before the Lifshitz point. Previously42 it has been noticed that the behavior at T = 300
K is compatible with the experimental behavior of Ref.,28 whereas the sign change upon voltage reversal of the
experiment of Ref.,26 performed at T = 7 K, can be interpreted as the second sign change of our T = 0 K curve.
8. CONCLUSIONS
In this paper we have presented a detailed theoretical investigation of the spin galvanic effect in a multi-band
model describing the electron states at a LAO/STO metallic interface. Starting from a tight-binding description,
we have derived a low-energy continuum model, which well describes the original model close to the Γ point.
The resulting effective Rashba-like models correspond to a linear-in-momentum SOC for the lowest and highest
pair of bands while it is cubic for the middle pair of bands. For these effective models we have performed
analytical calculations both in the absence and in the presence of disorder.
In particular, we have used the
standard diagrammatic approach of impurity technique valid in the metallic regime. We have also performed
exact numerical calculations, which are in agreement with the analytical ones close to the Γ point. The main
results can be summarized as follows. 1) In the absence of disorder, the SGC as a function of frequency of the
driving electric field has a singular delta-like behavior reminiscent of the Drude peak in the standard optical
electrical conductivity. The spectral strength associated to the delta function gets contributions from all the
interband transitions and, in general, cannot simply attributed to a single pair of spin-orbit split bands. 2) The
frequency-dependent SGC has also a regular contribution, which in the absence of disorder vanishes exactly at
zero frequency. This regular part has a number of spectral features, whose associated frequencies correspond
to the possible interband transitions. 3) A generic level-broadening mechanism leads to a finite regular part at
low frequency, whose behavior is then dominated by the smallest energy interband transition. The latter then
can be directly linked to a specific pair of spin-orbit split bands. A numerical calculation inevitably requires a
finite level broadening and we have shown the effect of varying the size of the broadening. 4) The presence of
disorder guarantees a stationary solution and introduces an intrinsic level broadening, whose effective strength
we have estimated by looking at the Lorentzian lineshape of the electrical conductivity as function of frequency.
00,20,40,60,8chemical potential-3-2,5-2-1,5-1-0,500,51SGE response [-e]0 K100 K200 K300 K Note that in contrast to the SGC, the spin Hall effect for a Rashba model with linear coupling (as for the lowest
xy-type bands) would vanish48 under stationary conditions and can only be sustained under special conditions,
as e.g. a periodic modulation of the chemical potential.49 5) The behavior of the SGC as a function of the
chemical potential shows a non monotonous behavior at zero temperature, which evolves to a monotonous one
when the temperature becomes larger than the level broadening. 6) Our theoretical results are compatible with
recent experiments and call for a systematic study of the voltage dependence as a function of the temperature.
G. S. acknowledges support from the Deutsche Forschungsgemeinschaft under SE806/19-1. S. C. acknowledge
financial support from the University of Rome Sapienza Research Project No. RM116154AA0AB1F5.
ACKNOWLEDGMENTS
APPENDIX A. THE BETHE -- SALPETER EQUATION FOR THE CHARGE
CURRENT VERTEX
In this appendix we provide a few details on the solution of the Bethe -- Salpeter equation for the vertex. We
follow closely the discussion developed for the case of the Rashba 2DEG model.50
A.1 The case of the Exy bands
We begin with the case of the lowest pair of bands due to the dxy orbitals. This case is practically equivalent to
the standard Rashba 2DEG model. Since vertex corrections do not modify the momentum dependence of the
vertex, it us useful to write the full vertex as
where all the momentum dependence is limited to the bare vertex (−e)kx/m. The spin-dependent part of the
vertex Γx satisfies then a new Bethe -- Salpeter equation
Jx = (−e)
kx
m
τ 0 + Γx,
(49)
where the effective bare vertex is defined by
Γx = γx + niu2(cid:88)k
GRΓxGA,
γx = (−e)αxyτ y + niu2(cid:88)k
GR(−e)
kx
m
GA.
(50)
(51)
In the above we have omitted for the sake of simplicity the explicit frequency and momentum dependence of the
Green functions. To evaluate the integral over the momentum, one must use the Pauli matrix expansion of the
Green function shown in Eq. (36). Because of the factor kx in the integral, only the combination GR
2 and its
complex conjugate appear. As a result the integral in the right hand side of Eq. (51) is proportional to τ y and
exactly cancels the first term so that the vertex γx vanishes (see Ref.48 for details) and the full vertex reduces
to the standard current vertex as shown in Eq. (42).
0 GA
A.2 The case of the E− bands
We follow the same strategy as in the previous case. The Green function has now the form (we omit the frequency
and momentum dependence for brevity)
where ζ was introduced in Eq. (32). In this case the effective bare vertex reads
G =
G+ + G−
2
−
(τ xky − τ y kx)
G+ − G−
2
,
ζ
ζ
γx = (−e)niu2(cid:88)k
GR(cid:18) kx
m
τ 0 − 2βkxkyτ x + β(3k2
x − k2
y)τ y(cid:19) GA = (−e)
(52)
(53)
1
4
βp2
F τ y,
which must be inserted in Eq. (50) with the form of the Green functions given by Eq. (52). In the above pF is
the Fermi momentum in the absence of SOC. Given the form (53), we look for a solution of the form Γx = Γy
xτ y.
With this ansatz, one easily sees that the integral over the momentum in Eq. (50) yields a term proportional to
τ y. As a result one has the closed equation
where
Γy
x = γy
x + IΓy
x =
γy
x
1 − I
,
(54)
(55)
I = niu2(cid:88)k
1
2
Tr(cid:2)τ yGRτ yGA(cid:3) = 1 −
1
2(cid:28) 4β2p6
1 + 4β2p6
F ζ 2τ 2(cid:29) ,
F ζ 2τ 2
where (cid:104). . .(cid:105) stands for the angle average over the direction of momentum. In the weak disorder limit, τ → ∞,
I = 1/2. As a result Γy
x = (−e)βp2
F /2.
A.3 The case of the E+ bands
In this case the Green function reads
G =
G+ + G−
2
+ (τ xky + τ y kx)
G+ − G−
2
.
(56)
The evaluation of the effective bare vertex is similar to the case of the Exy bands with the replacement αxy → α+.
As a result γx = 0 and the dressed vertex coincides with the momentum depedent part of the bare vertex.
APPENDIX B. THE BETHE -- SALPETER EQUATION AT FINITE FREQUENCY
For the Rashba 2DEG model (9), the Bethe -- Salpeter equation at finite frequency reads
1
2
Γx = γx + niu2(cid:88)k
γx = eατ y + niu2(cid:88)k
Tr(cid:110)τ yGR
Tr(cid:110)τ yGR
1
2
k (ω/2)τ yΓxGA
k (ω/2)(−e)
k (−ω/2)(cid:111)
kx
m
GA
k (−ω/2)(cid:111).
(57)
(58)
which has the solution
The dressed vertex reads then
Γx = −e
γx
τ /τs − iωτ
, γx = (−e)α
iω
−iω + 1/τ
τ y.
When the full dressed vertex (59) is used in the Kubo formula (39) one obtains Eq. (18).
Jx = (−e)
kx
m
τ 0 + −e
1
iω
α
τ /τs − iωτ
−iω + 1/τ
τ y.
(59)
REFERENCES
[1] E. I. Rashba, Fiz. Tverd. Tela 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)] 1
[2] [1] Yu. A. Bychkov and E. I. Rashba, Sov. Phys. - JETP Lett. 39, 78 (1984). 1
[3] Yu. A. Bychkov and E. I. Rashba, J Phys C: Solid State Phys. 17, 6039 (1984). 1, 3
[4] S. D. Ganichev, M. Trushin, and J. Schliemann, Spin orien- tation by electric current, in Handbook of
Spin Transport and Magnetism, edited by E. Y. Tsymbal and I. Zutic (Chapman and Hall, Boca Raton,
FL, 2016), second edition, extended. 1
[5] M. I. Dyakonov and V. I. Perel, Phys. Lett. A 35, 459 (1971). 1
[6] E. L. Ivchenko and G. E. Pikus, JETP Lett. 27, 604 (1978). 1
[7] L. E. Vorob'ev, E. L. Ivchenko, G. E. Pikus, I. I. Farbshten, V. A. Shalygin, and A. V. Shturbin, JETP
Lett. 29, 441 (1979). 1
[8] V. M. Edelstein, Solid State Communications 73, 233 (1990). 1, 3, 6
[9] E. L. Ivchenko, Y. B. Lyanda-Geller, and G. E. Pikus, JETP Lett. 50, 175 (1989). 1
[10] A. G. Aronov and Y. B. Lyanda-Geller, JETP Lett. 50, 431 (1989). 1
[11] L. Levitov, Y. V. Nazarov, and G. Eliashberg, Sov. Phys. JETP 61, 133 (1985). 1
[12] S. D. Ganichev, E. L. Ivchenko, S. N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl, Phys.
Rev. Lett. 86, 4358 (2001). 1
[13] S. D. Ganichev, E. L. Ivchenko, V. V. Belkov, S. A. Tarasenko, M. Sollinger, D. Weiss, W. Wegscheider,
and W. Prettl, Nature (London) 417, 153 (2002) 1
[14] Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. Lett. 93, 176601 (2004). 1
[15] Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Science 306, 1910 (2004). 1
[16] V. Sih, R. C. Myers, Y. K. Kato, W. H. Lau, A. C. Gossard, and D. D. Awschalom, Nat. Phys. 1, 31
(2005). 1
[17] C. L. Yang, H. T. He, L. Ding, L. J. Cui, Y. P. Zeng, J. N. Wang, and W. K. Ge, Phys. Rev. Lett. 96,
186605 (2006). 1
[18] H. J. Chang, T. W. Chen, J. W. Chen, W. C. Hong, W. C. Tsai, Y. F. Chen, and G. Y. Guo, Phys. Rev.
Lett. 98, 136403 (2007). 1
[19] B. M. Norman, C. J. Trowbridge, D. D. Awschalom, and V. Sih, Phys. Rev. Lett. 112, 056601 (2014). 1
[20] M. Luengo-Kovac, S. Huang, D. Del Gaudio, J. Occena, R. S. Goldman, R. Raimondi, V. Sih Phys. Rev.
B 96, 195206 (2017). 1
[21] J. C. R. S´anchez, L. Vila, G. Desfonds, S. Gambarelli, J. P. Attan´e, J. M. D. Teresa, C. Mag´en, and A.
Fert, Nat. Commun. 4, 2944 (2013). 1
[22] L. Chen, M. Decker, M. Kronseder, R. Islinger, M. Gmitra, D. Schuh, D. Bougeard, J. Fabian, D. Weiss,
and C. H. Back, Nat. Commun. 7, 13802 (2016).
[23] A. R. Mellnik, J. S. Lee, A. Richardella, J. L. Grab, P. J. Mintun, M. H. Fischer, A. Vaezi, A. Manchon,
E.-A. Kim, N. Samarth et al., Nature (London) 511, 449 (2014). 1
[24] Y. Shiomi, K. Nomura, Y. Kajiwara, K. Eto, M. Novak, K. Segawa, Y. Ando, and E. Saitoh, Phys. Rev.
Lett. 113, 196601 (2014). 1
[25] J.-Y. Chauleau, M. Boselli, S. Gariglio, R. Weil, G. de Loubens, J.-M. Triscone, and M. Viret, Europhys.
Lett. 116, 17006 (2016). 1
[26] E. Lesne, S. O. Y. Fu, J. C. Rojas-S´anchez, D. C. Vaz, H. Naganuma, G. Sicoli, J.-P. Attan´e, M. Jamet,
E. Jacquet, J.-M. George et al., Nat. Mater. 15, 1261 (2016). 1, 7, 7
[27] Y. Wang, R. Ramaswamy, M. Motapothula, K. Narayanapillai, D. Zhu, J. Yu, T. Venkatesan, and H. Yang,
Nano Lett. 17, 7659 (2017). 1
[28] Q. Song, H. Zhang, T. Su, W. Yuan, Y. Chen, W. Xing, J. Shi, J. Sun, and W. Han, Sci. Adv. 3, e1602312
(2017). 1, 7
[29] S. Caprara, Nat. Materials 15, 1124 (2016). 1
[30] Y. Ando and M. Shiraishi, J. Phys. Soc. Jpn. 86, 011001 (2017). 1
[31] A. Soumyanarayanan, N. Reyren, A. Fert, and C. Panagopoulos, Nature (London) 539, 509 (2016). 1
[32] J. Varignon, L. Vila, A. Barth´el´emy and M. Bibes, Nat. Physics 14, 322 (2018). 1
[33] Wei Han, Y. Otani and S. Maekawa, Quantum Materials 3, 27 (2018). 1
[34] A. D. Caviglia, M. Gabay, S. Gariglio, N. Reyren, C. Cancellieri, and J.-M. Triscone Phys. Rev. Lett. 104,
126803 (2010). 1
[35] S. Hurand, A. Jouan, C. Feuillet-Palma, G. Singh, J. Biscaras, E. Lesne, N. Reyren, A. Barth´el´emy, M.
Bibes, J. E. Villegas, C. Ulysse, X. Lafosse, M. Pannetier-Lecoeur, S. Caprara, M. Grilli, J. Lesueur and
N. Bergeal, Sci. Rep. 5, 12751 (2015). 1
[36] K. Gopinadhan, A. Annadi, Y. Kim, A. Srivastava, B. Kumar J. Chen, J. M. D. Coey, Araindo, T.
Venkatesan, Adv. Mater. 3, 1500114 (2015). 1
[37] Haixing Liang, Long Cheng, Laiming Wei, Zhenlin Luo, Guolin Yu, Changgan Zeng, and Zhenyu Zhang,
Phys. Rev. B 92, 075309 (2015). 1
[38] Shanavas, K. V., Popovi´c, Z. S. and Satpathy, S. Phys. Rev. B 90, 165108 (2014). 1
[39] Z. Zhong, A. T´oth, and K. Held, Phys. Rev. B 87, 161102 (2013). 1, 2, 2
[40] Bucheli, D., Grilli, M., Peronaci, F., Seibold, G. & Caprara, S. Phys. Rev. B 89, 195448 (2014). 1
[41] K. Shen, G. Vignale, and R. Raimondi, Phys. Rev. Lett. 112, 096601 (2014). 1, 3, 7
[42] G. Seibold, S. Caprara, M. Grilli, R. Raimondi, Phys. Rev. Lett. 119, 256801 (2017). 1, 7
[43] C. S¸ahin, G. Vignale, and M. E. Flatt´e, arXiv:1804.00061. 1
[44] G. Khalsa, B. Lee, and A. H. MacDonald, Phys. Rev. B 88, 041302 (2013). 2, 2
[45] Y. Kim, R. M. Lutchyn, and C. Nayak, Phys. Rev. B 87, 245121 (2013). 2
[46] N. Scopigno, D. Bucheli, S. Caprara, J. Biscaras, N. Bergeal, J. Lesueur, and M. Grilli, Phys. Rev. Lett.
116, 026804 (2016). 2
[47] R. Raimondi, M. Leadbeater, P. Schwab, E. Caroti and C. Castellani, Phys. Rev. B 64, 235110 (2001). 6
[48] R. Raimondi and P. Schwab, Phys. Rev. B 71, 033311 (2005). 6, 8, A.1
[49] G. Seibold, S. Caprara, M. Grilli, R. Raimondi, EPL 112, 1286 (2015). 8
[50] P. Schwab and R. Raimondi, European Physical Journal B 25, 483-495 (2002). 6, 6.1, A
[51] R. Raimondi, C. Gorini, P. Schwab, and M. Dzierzawa, Phys. Rev. B 74, 035340 (2006). 3, 3
[52] R. Raimondi, P. Schwab, C. Gorini, and G. Vignale, Ann. Phys. (Berlin) 524, 153 (2012).
|
1103.3249 | 2 | 1103 | 2012-01-14T06:33:42 | Electron spin synchronization induced by optical nuclear magnetic resonance feedback | [
"cond-mat.mes-hall"
] | We predict a new physical mechanism explaining the electron spin precession frequency focusing effect observed recently in singly charged quantum dots exposed to a periodic train of resonant circularly polarized short optical pulses [A. Greilich et al, Science 317, 1896 (2007), Ref. 1]. We show that electron spin precession in an external magnetic field and a field of nuclei creates a Knight field oscillating at the frequency of nuclear spin resonance. This field drives the projection of the nuclear spin onto magnetic field to the value that makes the electron spin precession frequency a multiple of the train cyclic repetition frequency, which is the condition at which the Knight field vanishes. | cond-mat.mes-hall | cond-mat |
Electron spin synchronization induced by optical nuclear magnetic resonance feedback
M. M. Glazov,1 I. A. Yugova,2 and Al. L. Efros3
1Ioffe Physical-Technical Institute RAS, 194021 St.-Petersburg, Russia
2Institute of Physics, St. Petersburg State University, 198504 St.-Petersburg, Russia
3Naval Research Laboratory, Washington DC 20375, USA
(Dated: October 4, 2018, Glazov-nuc-ae22.tex, printing time = 0 : 38)
We predict a new physical mechanism to explain the electron spin precession frequency focusing
effect recently observed in singly charged quantum dots exposed to a periodic train of resonant
circularly polarized short optical pulses [A. Greilich et al, Science 317, 1896 (2007), Ref. [1]]. We
show that electron spin precession in an external magnetic field and a field of nuclei creates a Knight
field oscillating at the frequency of the nuclear spin resonance. This field drives the projection of the
nuclear spin onto the magnetic field to the value that makes the electron spin precession frequency
a multiple of the train cyclic repetition frequency, the condition at which the Knight field vanishes.
PACS numbers: 78.67.Hc, 72.25.Fe, 74.25.nj
An electron spin localized in a single quantum dot
(QD) is a natural qubit candidate for solid state quantum
information processing [2 -- 4]. However, various optical or
electrical control operations on an electron spin in a QD
affect the nuclear spin polarization (NSP), which was ob-
served as the Overhauser shift of the electron spin pre-
cession frequency in a magnetic field using various pump-
probe techniques [5 -- 8]. The NSP is changed by electron-
nuclear spin flip-flop processes resulting from Fermi con-
tact hyperfine interactions [9, 10]. Such processes, how-
ever, are suppressed in a strong magnetic field because
of an approximately three orders of magnitude mismatch
in energy between the electron and nuclear Zeeman split-
tings. The NSP could be preserved on the time scale of
hours [11], unless special energy-conserving conditions for
electron spin-flip are reached [12]. Consequently, various
manipulations with an electron spin by optical or electri-
cal means become a main source of nuclear spin pumping,
because during the action of these time dependent per-
turbations spin-flip processes can occur without energy
conservation [1, 8, 13 -- 17].
One of the most remarkable demonstrations of such
a phenomenon is the nuclear induced frequency focus-
ing (NIFF) effect that was discovered in an ensemble of
singly charged QDs under excitation by a periodic train
of short resonant pulses of circularly polarized light [1].
This experiment showed that the nuclei change their po-
larization to values that allowed precession frequencies
of all electrons in the ensemble to satisfy the phase syn-
chronization conditions (PSC). These are the frequencies
at which the Larmor precession period of electron spin is
equal to an integer fraction of the pump pulse repetition
period [18]. Why does the NSP, which changes randomly
under light excitation, reach the value allowing electrons
to satisfy the PSC? The authors of Ref. [1] suggested a
connection with suppression of nuclear spin dynamics in
such dots. Indeed, the train synchronizes the spin preces-
sion of electrons satisfying PSC and makes them optically
passive at the moment of pulse arrival. This significantly
slows down the light-stimulated random dynamics of the
NSP in these QDs, leading to the accumulation of elec-
tron spins satisfying the PSC [1].
In this Letter we demonstrate that the NIFF could
be the result of the Knight field feedback-stimulated nu-
clear magnetic resonance (NMR). Our calculations treat
the electron spin and NSP as classical vectors precess-
ing around each other and an external magnetic field,
and show that the NSP increases its projection onto the
magnetic field monotonically with time therefore modi-
fying the electron spin precession frequency. When the
electron spin precession frequency has reached the PSC,
the time-averaged electron spin polarization generated
by the train and the corresponding Knight field causing
the NSP modifications vanish. The suggested mechanism
should result in much faster frequency focusing than that
connected with random fluctuations of the NSP [1, 13, 17]
We consider a singly negatively charged QD exposed
to the train of circularly polarized pump pulses propa-
gating along the structure growth axis z , arriving at the
QD with the repetition period TR , and also to a trans-
verse magnetic field B k ex , where ex is the unit vector
along x -axis (see inset in Fig. 1a). It is assumed that the
optical transition involves the excitation of a singlet X −
trion with the hole spin projection on the growth axis
being ±3/2 for σ+ and σ− pump pulses, respectively.
The pulse duration τp is short as compared with the
spin precession period in the external magnetic field and
as compared with the photocreated trion lifetime. The
optical selection rules are therefore the same as in the
absence of a magnetic field. In the interval between the
optical pulses, the electron spin interacts with the NSP,
m = Pi
Ii where Ii are the nuclear spins and the sum
is over a mesoscopic number ( N ∼ 105 ) of nuclear spins.
At equilibrium, in the studied magnetic fields, nuclei are
practically unpolarized: they are randomly oriented and
the NSP magnitude is controlled by random fluctuations
of nuclear spin directions m ∼ √N ∼ 3 × 102 . To de-
scribe this electron-nuclei interaction we treat the elec-
tron spin polarization, S , and m as classical vectors
[19] and adopt the box model [20 -- 22] in which the in-
teraction between electrons and nuclear spins does not
depend on their positions. These approximations lead to
the following equations for S and m in the interval be-
tween the optical pulses, (n− 1)TR 6 t < nTR , where n
is the pulse number [23]:
dS
dt
dm
dt
= [(Ω + αm(t)) × S(t)],
= [(ω + αS(t)) × m(t)].
(1a)
(1b)
Here Ω = Ωex and ω = ωex are the electron and nu-
clear spin precession frequencies in an external field, and
α is the hyperfine coupling constant between the electron
and nuclear spins in the QD. The difference of electron
and nuclear magnetic moments gives ω/Ω ∼ 10−3 . The
electron and nuclear spins in Eqs. (1) are coupled via an
Overhauser field of NSP fluctuation acting on the elec-
tron, αm , and a Knight field of the electron spin acting
on the nuclei, αS . We neglect completely a slow nuclear
spin relaxation connected with dipole-dipole interactions
between nuclei in Eq. (1b).
The dynamics of the electron and nuclear spins in the
QD have several very different time-scales. Under exper-
imental conditions [1] following inequalities hold:
2π
Ω ≪
2π
αm
. TR ≪
2π
ω ≪
2π
α
.
These inequalities mean (i) that electron spin dynamics
in the interval between pulses occurs in the permanent
field of the frozen fluctuation of NSP; and (ii) that the
dynamics of NSP is controlled only by the electron spin
polarization averaged over the pulse repetition period:
S0 =
1
TR Z nTR
(n−1)TR
S(t)dt .
(2)
Straightforward calculation shows that
2
not affect the nuclei if the PSC is fulfilled. If the PSC
is not satisfied, however, the weak Knight field, αS0 ,
modifies the NSP and drives its projection, mx(t) , to
the value that allows Ωeff to satisfy the PSC.
B
(a)
(b)
(c)
Figure 1: Time dependence of z component of the electron
spin polarization Sz calculated after the train initiation (a),
and after ∼ 4000 repetition periods of the train (b). Panel (c)
shows electron spin precession frequency calculated numeri-
cally (magenta) and analytically from Eq. (8) (black solid)
and Eq. (11) (black dashed) curves. Inset to panel (a) illus-
trates geometry of a single QD excitation and shows a pump
pulse and an electron (red) and nuclear (black) spins. Inset
to panel (c) shows the absolute value of electron spin as a
function of time. Calculations were conducted for α = 0.4 ,
m = 23.5 , which corresponds to approximately 2200 nu-
clei with spin I = 1/2 , Θ = 2π/3 , ΩTR/(2π) = 8.5 , and
ω = Ω/500 .
To describe this effect we need to complement Eq. (1),
which describes the electron-nuclear spin dynamics in the
interval between pulses, by the relationship between the
electron spin polarization before, S(b) , and after, S(a) ,
the pump pulse, which for resonant excitation read [24]
S0 = n(n · S(a)) +
ΩeffTR
[S(a) − n(n · S(a))] × n
+
Ωeff TR
S(a) − n(n · S(a))
sin (Ωeff TR)
[1 − cos (Ωeff TR)],
(3)
where S(a)
is the electron spin polarization right after
the excitation pulse, n = (Ω+ αm)/Ωeff is a unit vector
along the effective field and Ωeff = Ω+αm ≈ Ω+αmx .
One can see from Eq. (3) that the average electron spin
polarization S0 transverse to n vanishes when Ωeff sat-
isfies the PSC: Ωeff TR = 2πK, with K = 1, 2, . . . The
longitudinal component does not vanish at the PSC due
to a small deviation of n from the magnetic field direc-
tion caused by the nuclear field. As we show below, the
transverse components of an electron spin are required for
the NSP modification. As a result, the electron spin does
Q2 + 1
Q2 − 1
4
2
+ S(b)
z
, S(a)
S(a)
z =
x , S(a)
x = QS(b)
y = QS(b)
y ,
(4)
where Q = cos Θ/2 and 1 − Q2 is the probability of
trion creation by the short circularly polarized pulse with
area Θ . Numerical integration of Eqs. (1), which uses
Eq. (4), clearly demonstrates the NIFF effect as one can
see in Fig. 1. Calculations were conducted for the elec-
tron spin precession frequency, which does not satisfy the
PSC: ΩTR/(2π) = 8.5 , and an initial condition for the
NSP, which was selected as m k ez . We exaggerated
the value of α and reduced the number of nuclei from a
typical value in a QD N ∼ 105 down to N ∼ 2× 103 to
conduct numerically accurate calculations within reason-
able computational time. Otherwise the difference in the
characteristic times of electron and nuclei spin dynamics
requires carrying out calculations on a timescale covering
nine orders of magnitude.
Figure 1(a) shows the temporal dynamics of the elec-
tron spin z -component for the 6th and 7th repetition
periods where the electron spin dynamics is already sta-
tionary [18] but the nuclear effects have not come into
play. Panel (b) shows those dynamics for the 3998th
and 3999th periods when the nuclear spin precession had
already taken place. One can see that the slow nuclear
spin dynamics changes qualitatively the character of elec-
tron spin precession in this time interval: the amplitude
of electron spin polarization is strongly enhanced and
reaches its maximum value 1/2, see inset in Fig. 1(c).
The effect is connected with the temporal dynamics of
the electron effective spin precession frequency shown in
Fig. 1(c). Apart from the oscillations of frequency ω re-
lated to the NSP precession, Ωeff initially grows linearly
in time and then saturates at the multiple of 2π/TR .
The periodic train of short pulses synchronizes the elec-
tron spin precession in the QD where Ωeff satisfies the
PSC, leading to complete polarization of electron as seen
in Fig. 1(b).
To understand physical mechanism responsible for
NIFF demonstrated in Fig. 1, let us first consider the
effect of the nuclear spin precession on the electron spin
dynamics. Since nuclear spin precession is slow as com-
pared with electron spin precession and pump pulse rep-
etition periods, one can treat the electron spin dynam-
ics in the interval between pulses as a precession in the
static field Ω + αm (see Fig. 2a). Using procedure from
Ref. [24] and Eqs. (3), (4) we derive a steady state (on
the timescale of TR ) value of Sx exposed to the train
of optical pulses:
Sx ≡ Sx,0(t) = αmz(t)Cx/Ω,
(5)
Cx = −
2Q sin2 (ΩeffTR/2) + (Q − 1)2/2
(Q − 1)2 + 2(Q + 1) sin2 (ΩeffTR/2)
,
(a)
(b)
Figure 2: (a) Schematic illustration of electron spin precession
in quasi-static field Ω + αm(t) (top) and temporal depen-
dence of Sx (bottom). (b) Geometry of NMR induced by
steady state αSy,0 , and alternating, αSx(t) , Knight fields.
Bottom panel shows static and oscillating fields in the (xy)
plane.
3
One can see from Eq. (5) that Sx(t) oscillates slowly
with the NSP precession frequency ω . This occurs be-
cause the electron spin precession axis (see Fig. 2a) is
tilted from the x axis in the (xz) plane by the small
angle αmz(t)/Ω . The precession leads to a non-zero
Sx -projection of the electron spin, which value is pro-
portional to the tilt angle oscillating at the frequency
ω . The same geometrical arguments show that S0,y
and S0,z are the sum of the time independent terms
S0,y and S0,z and small terms oscillating at 2ω that
can be neglected. As a result, the NSP, which precesses
around the static field ω + αS0 slightly tilted from the
x axis experiences the alternating Knight field αSx(t)
(see Fig. 2b). Since Sx(t) oscillates with ω it drives the
NMR and leads to slow modification of mx , as shown
below.
To describe the time dependence of mx(t) we need to
take into account that the NMR driving field, αSx(t) ,
is almost parallel to the static field. At first, it creates
a time-independent shift of the NSP, ¯mz , along the z
axis. Indeed, in the first approximation on α :
mz(t) = m⊥ cos(cid:20)ωt +Z t
0
αSx(t′)dt′(cid:21)
(6)
where m⊥ = pm2 − m2
x is the perpendicular compo-
nent of the NSP. In the same approximation on α ,
Eq. (6) can be rewritten as: mz(t) ≈ m⊥ cos ωt + ¯mz ,
where ¯mz = −α2m2
⊥Cx/(2ωΩ) . The analogous calcula-
tion shows that ¯my = 0 .
Secondly, the NMR is caused only by the component of
the alternating field perpendicular to the NSP precession
axis, which is equal to α(αS0/ω)Sx(t) . Averaging the
x -component of Eq. (1b): dmx/dt = α(Symz − Szmy)
over a sufficiently long temporal interval ∆T ≫ 1/ω ≫
1/Ω we obtain the standard NMR expression:
dmx
dt
= αS y,0 ¯mz = −
α3Sy,0Cxm2
⊥
2ωΩ
,
(7)
where the averaged my : ¯my = 0 . Generally, the right
hand side of Eq. (7) depends on mx via Sy,0 and Cx
dependence on Ωeff . One can neglect this dependence if
Ωeff is not very close to the PSC. In this case we obtain
for mx(t) :
mx(t)
m⊥(0) ≈
t
τnf
,
1
τnf
= −
α3m⊥(0)
2ωΩ
Sy,0Cx,
(8)
where m⊥(0) is the initial value of the perpendicular
component of the NSP. One can see from Eq. (8) that
mx(t) , and consequently Ωeff , grow linearly with time.
The analytical dependence Ωeff (t) shown by the solid
line in Fig. 1(c) is in good agreement with results of the
numerical calculations.
In the case that Ωeff is close to the phase synchroniza-
, one can
tion condition, which is fulfilled if mx = mPSC
x
rewrite Eq. (7) using Eq. (3) as:
(a)
dmx
dt
= (cid:0)mx − mPSC
x
mτ ′
nf
(cid:1)2
,
where
1
τ ′
nf
=
α5mTR
16ωΩ2
1 + Q
1 − Q (cid:2)m2 − (mPSC
x
)2(cid:3) .
The dynamics of mx(t) in this case is described by
mx(t) = mPSC
x − m
τ ′
nf
t − t0
,
(9)
(10)
(11)
where t0 is an arbitrary constant, chosen to merge the
time dependencies given by Eqs. (8) and (11) at t ∼ τnf .
Corresponding long-time asymptote of Ωeff is plotted in
Fig. 1(c) by a dashed line.
x
x
x
< 0 .
x
Although dmx/dt = 0 at mx = mPSC
only if its fluctuation δ = mx − mPSC
these mx 's
are only the saddle points in the mx time dependence.
the points are stable if mx < mPSC
For positive τ ′
nf
and unstable otherwise. This means that mx returns to
mPSC
If
δ > 0 , the fluctuation causes the deterministic growth of
mx until the next PSC with larger mx is met. Including
a weak nuclear spin relaxation in Eq.
(1b) gives two
mx = mPSC
x mτnf ′/T1 , at which dmx/dt = 0 ,
where T1 ≫ τnf ′ is the nuclear spin relaxation time. One
of these solutions, mx = mPSC
x mτnf ′/T1 , is a
stable point of mx(t) . A switch of the light polarization
from σ+ to σ− does not change the direction of the mx
growth, as can be seen from Eqs. (8) and (11).
x −pmPSC
x ±pmPSC
Figure 3 shows the dependence of the NIFF time, τnf ,
defined Eq. (8) on the pump pulse area, Θ . One can
see that τnf becomes extremely long for Θ ≪ 1 because
electron spin orientation is inefficient and the averaged
electron spin S0 is very small under these conditions.
Growth of Θ increases S0 and consequently the Knight
field, αS0 , which in turn shortens τnf . Further increase
of τnf with Θ seen in Fig. 3 is connected with the pe-
riodic dependence of S0 on Θ . The frequency focusing
time τnf ∝ Ω2ω increases significantly with a magnetic
field. This explains the rapid increase of τnf with Ω
seen in Fig. 3.
We have considered electron-nuclear spin dynamics in
a single QD with a certain initial orientation of NSP. To
describe a QD ensemble we average over different initial
orientations of the NSP. The time dependence of the aver-
age z -component of the electron spin Sz(t) is shown in
Fig. 3(b),(c). The initial NSP orientations m(0) were
chosen to be isotropically distributed, with the magni-
tude m(0) = m = 23.5 used to describe the spin dy-
namics of a single QD in Fig. 1. Figure 3(b) shows the
electron spin dynamics in the absence of nuclear spin dy-
namics, which is simulated using α = 0 and ω = 0
in Eq. (1b). One can see that Sz(t) partially decays be-
tween the pump pulses and the phase of spin beats jumps
4
(b)
(c)
Figure 3: (a) Dependence of the NIFF time, τnf , on the
pulse area, Θ . The three curves were calculated at the
magnetic fields which give the following electron spin preces-
sion frequencies: ΩTR/(2π) = 50.5 (black), 100.5 (red) and
150.5 (blue). The parameters used: α = 5 × 106 sec −1 ,
TR = 13 ns, ω/Ω = 10−3 and m = 126 , which could be
created by 6 × 104 nuclei with spin 1/2 , were selected to
keep the calculations relevant to Refs. [1, 18].
(b) and (c)
Time dependence of the average z component of the elec-
tron spin Sz(t) during 3997TR < t < 3999TR time inter-
val. The averaging was conducted over 25 initial directions of
NSP m . Panel (b) is calculated for the frozen nuclear fluc-
tuation ( α = ω = 0 in Eq. (1b)), and panel (c) is calculated
taking the nuclear spin precession into account ( α = 0.4 ,
ω = Ω/500 ). Other parameters are the same as in Fig. 1.
at each repetition period. Comparison with Fig. 1(a)
shows that the amplitude of Sz(t) after 4000 repetition
periods is the same as at the initial precession stage. The
nuclear spin precession in the external magnetic field and
in the Knight field tunes up the electron spin precession
frequency and leads to a very pronounced mode-locking
of electron spin coherence seen in Fig. 3(c). One can see a
clear rise of Sz(t) before pulse arrival. The NIFF effect
also significantly increases the Sz(t) amplitude relative
to those shown in Fig. 3(b). For the parameters used in
this calculation αmTR/(2π) ≈ 1.5 the main contribu-
tion to Sz(t) comes from the two Ωeff 's satisfying the
PSC ΩeffTR/2π = 8 and 9 .
We note that if the NIFF effect is a consequence of
random fluctuations of the NSP as suggested in Refs. [1,
13], the rate of this process can be estimated as γn ∼ (1−
Q)α2/(Ω2TR) . The current model leads to a much faster
NIFF in the QD ensemble studied in Ref.
[1] because
1/(γnτnf ) ∼ αm/ω ∼ 10 in these experiments.
In summary, we have suggested a new physical mech-
anism of the NIFF effect for the electron spin precession
[1]. This mechanism leads to a monotonic shift of the
electron spin precession frequency with time and allows
this frequency to reach phase synchronization condition
with the train repetition period much faster than in the
case when the NIFF is a consequence of random fluctu-
ations of the nuclear spins as was suggested earlier. Fur-
ther experimental studies of the NIFF time dependence
on a magnetic field and a pulse area should provide evi-
dence for the suggested mechanism.
Acknowledgements. Authors thank A. Braker, I.V.
Ignatiev, E.L. Ivchenko, E.I. Rashba for valuable dis-
cussions and RFBR, "Dynasty" Foundation -- ICFPM,
Alexander von Humboldt Foundation and the Office of
Naval Research for support.
[1] A. Greilich et al., Science 317, 1896 (2007).
[2] D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120
(1998).
[3] S. A. Wolf et al., Science 294, 1488 (2001).
[4] D. D. Awschalom, D. Loss, N. Samarth, eds. Semicon-
ductor Spintronics and Quantum Computation (Springer-
Verlag, Heidlberg, 2002)
[5] S. W. Brown et al., Phys. Rev. B 54 R17339 (1996).
[6] J. M. Kikkawa and D. D. Awschalom, Science 287, 473
(2000).
[7] F. H. L. Koppens et al., Nature, 442, 766 (2006).
[8] T. D. Ladd et al., Phys. Rev. Lett. 105, 107401 (2010).
[9] M. I. Dyakonov and V. I. Perel' , JETP 38, 177 (1974);
in: Optical orientation, eds. F. Meier and B. P. Za-
5
kharchenja (North-Holland, Amsterdam, 1984).
[10] A. Abragam, Principles of Nuclear Magnetism, Claren-
don Press, Oxford, 1961.
[11] D. Paget, Phys. Rev. B 25, 4444 (1982).
[12] J. R. Petta et al., Phys. Rev. Lett. 100, 067601 (2008).
[13] S. G. Carter et al., Phys. Rev. Lett. 102, 167403 (2009).
[14] J. Danon and Y. V. Nazarov, Phys. Rev. Lett. 100,
056603 (2008).
[15] M. S. Rudner and L. S. Levitov, Phys. Rev. Lett. 99,
246602 (2007).
[16] E. A. Laird et al., Phys. Rev. Lett. 99 246601, (2007).
[17] V. L. Korenev, preprint arXiv:1006.5144 (2010).
[18] A. Greilich et al., Science 313, 341 (2006).
[19] I. A. Merkulov, Al. L. Efros, and M. Rosen, Phys. Rev
B 65, 205309 (2002).
[20] S. M. Ryabchenko, Yu. G. Semenov, JETP 57, 825
(1983).
[21] G. Kozlov, JETP 105, 803 (2007).
[22] G. Chen, D. L. Bergman, and L. Balents, Phys. Rev. B
76, 045312 (2007).
[23] I. A. Merkulov et al., Phys. Rev. B 81, 115107 (2010).
[24] I. A. Yugova et al., Phys. Rev. B 80, 104436 (2009).
|
1001.2705 | 2 | 1001 | 2010-01-20T14:43:34 | Analysis of the two dimensional Datta-Das Spin Field Effect Transistor | [
"cond-mat.mes-hall",
"cond-mat.other"
] | An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed conductance modulation in a two-dimensional SPINFET structure does not match the theoretically expected result very well. This calls into question the claimed demonstration of the SPINFET and underscores the need for further careful investigation. | cond-mat.mes-hall | cond-mat |
Analysis of the Two Dimensional Datta-Das
Spin Field Effect Transistor
P. Agnihotri and S. Bandyopadhyay
aDepartment of Electrical and Computer Engineering, Virginia Commonwealth
University, Richmond, VA 23284, USA
Abstract
An analytical expression is derived for the conductance modulation of a ballistic
two-dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of
gate voltage. Using this expression, we show that the recently observed conductance
modulation in a two-dimensional SPINFET structure does not match the theoreti-
cally expected result very well. This calls into question the claimed demonstration
of the SPINFET and underscores the need for further careful investigation.
Key words: spintronics, spin field effect transistor, Ramsauer resonances
PACS: 85.75.Hh, 72.25.Dc, 71.70.Ej
Preprint submitted to Elsevier
1 November 2018
Even two decades after the original proposal of the Datta-Das Spin Field
Effect Transistor (SPINFET) [1], the exact analytical expression for the chan-
nel conductance of a two-dimensional device structure has remained some-
what obscure [see the Note at the end]. Although Datta and Das proposed
a two-dimensional transistor structure in their original work [1], the expres-
sion they derived for the channel conductance as a function of gate voltage
was based on the assumption that the carrier's wavevector component trans-
verse to the direction of current flow is zero, which effectively corresponds to
a one-dimensional structure. No expression was derived for the conductance
modulation in a two-dimensional structure, possibly because Datta and Das
realized that the conductance modulation will be severely suppressed in a
two-dimensional system.
Recently, a report has appeared in the literature claiming demonstration of
the Datta-Das SPINFET for the first time. The claim is predicated on the fact
that a conductance modulation was observed in a two-dimensional SPINFET
structure as a function of gate voltage, which could be fitted exactly with the
equation
∆G = Acos(cid:16)2m∗α [VG] L/2 + φ(cid:17) ,
(1)
where α [VG] is the gate-controlled Rashba spin-orbit interaction strength in
the two-dimensional channel, VG is the gate voltage, m∗ is the charge carrier's
effective mass, L is the source-to-drain separation (channel length) and φ is
an arbitrary phase shift. The authors of [2] measured the expected amplitude
A and the quantity α [VG] in their structure independently, and then using
φ as the only fitting parameter, they could fit the experimentally observed
conductance modulation ∆G in their structure with Equation (1). This "fit"
2
(among others) was offered as proof that the Datta-Das transistor has been
demonstrated.
Ref. [2] took Equation (1) from ref. [1], not realizing that it applies only to a
strictly one-dimensional channel since ref. [1] had derived it assuming that the
wavevector component transverse to the direction of current flow is exactly
zero 1 . Equation (1) does not hold for a two-dimensional channel since there
the transverse wavevector component will not be zero. Recently, one of us
pointed this out [3] and derived the correct equation for a two-dimensional
channel (of finite width) assuming that only the electron energy is conserved
in ballistic transport. Subsequently, it was pointed out [4] that if the width
of the channel is semi-infinite so that periodic boundary conditions can be
imposed along the width, then the transverse wavevector (perpendicular to the
direction of current flow) is also a good quantum number and will be conserved
in ballistic transport. This is reminiscent of two-dimensional coherent resonant
tunneling devices of semi-infinite width, where the transverse wavevector is
conserved during tunneling [5].
Conservation of the transverse wavevector greatly simplifies the equation de-
rived in [3]. Additionally, low temperature and low bias conditions cause fur-
ther simplification, resulting in the following simple equation for the conduc-
tance modulation in a two-dimensional SPINFET:
∆G = B
kF
Z0
dkz"1 −
k2
z
k2
F# cos [Θ (kF , kz, α [VG]) L] ,
(2)
1 The expression derived in ref. [1] did not contain the phase shift φ, but it could
arise if α [VG] 6= 0 when VG = 0.
3
where B is a constant and
Θ (kF , kz, α [VG]) = −
(2m∗α [VG] /2) kF + (m∗)2 α2 [VG] /4
qk2
F − k2
z
.
(3)
Here, kz is the transverse wavevector component (along the width) and kF is
the Fermi wavevector. Derivation of Equation (2) is given in Appendix I.
Clearly, Equation (2) has no similarity with Equation (1). Therefore, the con-
ductance modulations in the one- and the two-dimensional cases are very
different. Particularly, Equation (1) predicts that the conductance modula-
tion could reach 100%, whereas Equation (2) shows unambiguously that it
will never reach 100% because ensmeble averaging represented by the integra-
tion over the transverse wavevector component kz will dilute the modulation
considerably. Only in a strictly one-dimensional channel where Equation (1)
holds, the conductance modulation can be 100%, while in a two-dimensional
channel, it will never be 100%.
Ref. [6] has independently derived Equation (2) for a two-dimensional SPIN-
FET and found that it can be approximated as
∆G ≈
B
2qπm∗α [VG] L
cosh2m∗α [VG] L/2 + π/4i .
(4)
Equation (4) does not quite match Equation (1) either since the amplitude
of the cosine function in Equation (4) is not constant, but gate-voltage de-
pendent. Therefore, Equation (2) or Equation (4) cannot be reconciled with
Equation (1). However, ref. [6] also found that for the particular experimental
parameters of ref. [2], Equation (1) and Equation (2) yield similar curves for
∆G versus VG over the range of VG used in the experiment. This similarity
is coincidental and will not be sustained over extended ranges of VG. More
4
importantly, we have found that if we use the values of m∗, α [VG], kF and
L reported in [2], then the ∆G versus VG curve computed from the correct
Equation (2) does not match the experimental ∆G versus VG curve reported in
[2] very well. We show these two curves in Fig. 1. This disagreement between
the correct theoretical result and the experimental observation casts doubt on
the claimed demonstration of the Datta-Das SPINFET.
We emphasize that the above disagreement however does not establish con-
clusively that the Datta-Das SPINFET was not demonstrated in [2]. Instead,
it casts doubt on the claimed demonstration and highlights the need for fur-
ther investigation. Finally, the important question is if the observed voltage
modulation was not due to the Datta-Das effect, what could it have been due
to? Ref. [2] showed that the conductance modulation ∆G versus VG disap-
peared if the source and drain contacts were magnetized in a direction such
that they injected and detected spins parallel to the effective magnetic field
caused by the Rashba interaction. The modulation reappeared when the di-
rection of magnetization was rotated by 90◦ so that the injected spins became
perpendicular to the effective magnetic field. This is consistent with the Datta-
Das effect which relies on precession of the injected spins around the effective
magnetic field caused by Rashba interaction. Since precession cannot occur
if the spins are parallel to the effective magnetic field, the Datta-Das mod-
ulation will disappear in that case. The precession will occur if the injected
spins are perpendicular to the effective magnetic field, so that the Datta-Das
effect is recovered when the contacts' magnetizations are rotated by 90◦. This
observation is certainly supportive of the Datta-Das effect, but it could also
be caused by other phenomena. One likely phenomenon is Ramsauer reso-
nances in the channel [7] which can also give rise to a voltage modulation ∆G
5
versus VG. Ramsauer resonances are exacerbated by a magnetic field in the
direction of current flow. In the experiment, when the contacts were magne-
tized in the direction perpendicular to the effective magnetic field caused by
the Rashba interaction, they caused a real magnetic field to appear in the
channel in the direction of current flow. This could have induced Ramsauer
resonances. When the direction of magnetization of the contacts was rotated
by 90◦, the real magnetic field in the channel disappeared, which could have
quenched or abated the Ramsauer resonances. Thus, the observed effect is also
consistent with Ramsauer resonances. Consequently, further tests are required
to identifythe origin of the observed conductance modulation unambiguously.
The expected oscillation periods for Ramsauer resonances and the Datta-Das
effect are of course very different, but since barely one oscillation period was
observed in the experiment of ref. [2], it is difficult to discriminate between
these two effects from the observed modulation.
In summary, we have shown that the conductance modulation observed in ref.
[2] cannot be fitted very well by the correct equation governing such a device,
contrary to the claim of ref. [2]. Moreover, there can be alternate explanations
for the origin of the observed conductance modulation of the device. Therefore,
further careful study is required to resolve these controversies definitively.
Note: After the submission and acceptance of this work, we became aware of
a paper [M. G. Pala, M. Governale, J. Konig and U. Zulicke, Europhys. Lett.,
65, 850 (2004)] which has derived an analytical expression for the channel
conductance of a two-dimensional SPINFET as a function of different orienta-
tions of the contacts' magnetization. That expression reduces to Equation (2)
when the contacts are magnetized in the +x-direction. We thank Prof. Ulrich
Zulicke for bringing this to our attention.
6
Appendix I
In this Appendix, we derive the expression for the channel conductance of a
two-dimensional Datta-Das SPINFET as a function of gate voltage.
Consider the two-dimensional channel of a Spin Field Effect Transistor (SPIN-
FET) in the x-z plane (shown in Fig. 2(a)), with current flowing in the
x-direction. An electron's wavevector components in the channel are desig-
nated as kx and kz, while the total wavevector is designated as kt. Note that
k2
t = k2
x + k2
z as shown in Fig. 2(b).
The gate terminal induces an electric field in the y-direction which causes
Rashba interaction. The Hamiltonian operator describing an electron in the
channel is
H =
x + p2
p2
2m∗
z
[I] + α [VG] (σzpx − σxpz) ,
(5)
where the p-s are the momentum operators, the σ-s are the Pauli spin matrices
and [I] is the 2×2 identity matrix. Since this Hamiltonian is invariant in both
x- and z-coordinates, the wavefunctions in the channel are plane wave states
ei(kxx+kz z). Consequently, in the basis of these states, the Hamiltonian is
H =
2k2
t
2m∗ + α [VG] kx −α [VG] kz
−α [VG] kz
2k2
t
2m∗ − α [VG] kx
.
(6)
Diagonalization of this Hamiltonian yields the eigenenergies and the eigen-
spinors in the two spin-split bands in the two-dimensional channel:
7
El =
2k2
t
2m∗ − α [VG] kt (lower band); Eu =
2k2
t
2m∗ + α [VG] kt (upper band).
(7)
[Ψ]l =
sinθ
cosθ
(lower band);
[Ψ]u =
−cosθ
sinθ
(upper band).
(8)
where θ = (1/2)arctan (kz/kx). The energy dispersion relations in the two
bands (one broken and the other solid) are plotted in Fig. 3. Note that an
electron of energy E has two different wavevectors in the two bands given by
k(1)
t
and k(2)
t
.
We will assume that the source contact of the SPINFET is polarized in the
+x-direction and injects +x-polarized spins into the channel under a source-
to-drain bias. We also assume that the spin injection efficiency at the source is
100%, so that only +x-polarized spins are injected at the complete exclusion of
−x-polarized spins. An injected spin will couple into the two spin eigenstates
in the channel. It is as if the x-polarized beam splits into two beams, each
corresponding to one of the channel eigenspinors. This will yield:
1
√2
1
1
= C1
sinθ
cosθ
+ C2
−cosθ
sinθ
,
(9)
+x − polarized
where the coupling coefficients C1 and C2 are found by solving Equation (9).
The result is
C1 = C1 (kx, kz) = sin (θ + π/4)
C2 = C2 (kx, kz) = −cos (θ + π/4)
8
(10)
Note that the coupling coefficients depend on kx and kz.
At the drain end, the two beams recombine and interfere to yield the spinor of
the electron impinging on the drain. Here, we are neglecting multiple reflection
effects between the source and drain contacts in the spirit of ref. [1]. Since
the two beams have the same energy E and transverse wavevector kz (these
are good quantum numbers in ballistic transport), they must have different
longitudinal wavevectors k(1)
x and k(2)
x
since k(1)
t
6= k(2)
t
. Therefore, these two
beams have slightly different directions of propagation in the channel. In other
words, the channel behaves like a "birefrigent" medium where waves with anti-
parallel spin polarizations travel in slightly different directions.
Hence, the spinor at the drain end will be:
[Ψ]drain = C1
sinθ
cosθ
i(cid:16)k(1)
x L+kzW(cid:17) + C2
e
−cosθ
sinθ
i(cid:16)k(2)
x L+kzW(cid:17)
e
= eikzW
sin (θ + π/4) sinθeik
(1)
x L + cos (θ + π/4) cosθeik
(2)
x L
sin (θ + π/4) cosθeik
(1)
x L − cos (θ + π/4) sinθeik
(2)
x L
,(11)
where L is the channel length (distance between source and drain contacts) and
W is the transverse displacement of the electron as it traverses the channel.
Since the drain is polarized in the same orientation as the source, it transmits
only +x-polarized spins, so that spin filtering at the drain will yield a trans-
mission probability T2 where T is the projection of the impinging spinor on
the eigenspinor of the drain. It is given by
9
T =
1
√2
1 1
sin (θ + π/4) sinθeik
(1)
x L + cos (θ + π/4) cosθeik
(2)
x L
sin (θ + π/4) cosθeik
(1)
x L − cos (θ + π/4) sinθeik
(2)
x L
= eikzW (cid:20)sin2 (θ + π/4) eik
(1)
x L + cos2 (θ + π/4) eik
(2)
x L(cid:21) .
Here, we have assumed 100% spin filtering efficiency.
Therefore,
T2 = cos4 (θ + π/4)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
= cos4 (θ + π/4) + sin4 (θ + π/4) +
cos2(2θ)cos(ΘL),
1 + tan2 (θ + π/4) e
ihk
(1)
x −k
2
(2)
x iL(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)
1
2
eikzW
(12)
(13)
where Θ = k(1)
x − k(2)
x .
From Equation (8), we get that k(1)
t − k(2)
t = −2m∗α [VG] /2. Expressing the
wavevectors in terms of their x- and z-components, we get:
rhk(1)
x i2
+ k2
z −rhk(2)
x i2
+ k2
z = −2m∗α [VG] /2,
which yields
Θ = k(1)
x − k(2)
x = −2m∗α [VG] /2k(2)
hk(1)
x + k(2)
x i /2
t + 2 (m∗)2 α2 [VG] /4
From Equation (8), we also get that
k(2)
t =
m∗α [VG]
2
±vuut m∗α [VG]
2
!2
+ k2
0 ≈ k0 +
m∗α [VG]
2
3
2
where k0 = √2m∗E/.
(14)
(15)
(16)
.
,
Now, if α [VG] is small, then hk(1)
results in Equation (15), we get
x + k(2)
x i /2 ≈ qk2
0 − k2
z. Substituting these
10
Θ = − (2m∗α [VG] /2) k0 − (m∗)2 α2 [VG] /4
= − (2m∗α [VG] /2)√2m∗E/ − (m∗)2 α2 [VG] /4
0 − k2
z
qk2
q2m∗E/2 − k2
z
.
(17)
The current density in the channel of the SPINFET (assuming ballistic trans-
port) is given by the Tsu-Esaki formula:
J =
q
Wy
∞
Z0
1
h
dEZ dkz
π T2 [f (E) − f (E + qVSD)] ,
(18)
where q is the electronic charge, Wy is the thickness of the channel (in the
y-direction), VSD is the source-to-drain bias voltage and f (η) is the electron
occupation probability at energy η in the contacts. Since the contacts are at
local thermodynamic equilibrium, these probabilities are given by the Fermi-
Dirac factor.
In the linear response regime when VSD → 0, the above expression reduces to
J =
q2VSD
Wy
∞
Z0
1
h
dEZ dkz
π T2"−
∂f (E)
∂E # .
This yields that the channel conductance G is
G =
ISD
VSD
=
JWyWz
VSD
=
q2Wz
πh
∞
Z0
dEZ dkzT2"−
∂f (E)
∂E # ,
(19)
(20)
where ISD is the source-to-drain current and Wz is the channel width.
Using Equations (13) and (17), we finally get that the channel conductance is
G = G0 +
= G0 +
q2Wz
2πh
q2Wz
2πh
∞
Z0
Z0
∞
dEZ dkzcos2(2θ)cos(ΘL)"−
cos(ΘL)"−
dEZ dkz
k2
x
k2
x + k2
z
∂f (E)
∂E #
∂E #
∂f (E)
11
≈ G0 +
q2Wz
2πh
∞
Z0
dEZ dkz"1 −
2k2
z
2m∗E# cos(ΘL)"−
∂f (E)
∂E # ,
(21)
where G0 is a constant independent of Θ and hence the gate voltage. It is easy
to show that G0 = q2Wz
2πh R ∞
0 dER dkzh1 + 2k2
2m∗Eih− ∂f (E)
∂E i.
z
If the temperature is low so that − ∂f (E)
reduces to
∂E ≈ δ(E − EF ), then the last equation
G = G0 +
= G0 +
q2Wz
2πh
q2Wz
2πh
∞
Z0
Z0
kF
dEZ dkz"1 −
dkz"1 −
k2
z
k2
2k2
z
2m∗E# cos(ΘL)δ(E − EF )
F# cos [Θ (kF , kz, α [VG]) L]
=
q2Wz
πh
kF
Z0
dkz"1 −
k2
z
k2
F# F (α [VG] , L, kF , kz) ,
(22)
where
F (α [VG] , L, kF , kz) = (cos2 [Θ (kF , kz, α [VG]) L] /2 +
k2
z
k2
F
sin2 [Θ (kF , kz, α [VG]) L] /2) , (23)
and kF is the Fermi wavevector. Therefore,
∆G = G − G0 =
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F# cos [Θ (kF , kz, α [VG]) L] .
(24)
The last equation is identical with Equation (2).
12
Appendix II
In this appendix, we will derive an expression for ∆G assuming non-ideal
spin injection and detection. Let us call the spin injection efficiency at the
source contact ηS and the spin filtering efficiency in the drain contact ηD. If
these efficiencies are less than 100%, then the probability of a +x-polarized
spin being injected by the source is (1 + ηS) /2 and the probability of it being
filtered at the drain is (1 + ηD) /2 when both contacts are magnetized in the
+x-direction. Therefore the contribution to ∆G arising from +x-polarized
injection and +x-polarized detection is
[∆G]+x,+x =
(1 + ηS) (1 + ηD)
4
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F# cos [Θ (kF , kz, α [VG]) L]
.(25)
Next consider the situation when the source injects a +x-polarized spin, but
it transmits into the -x-polarized band in the drain because spin filtering is
imperfect.
In this case, since the spin injected from the source is +x-polarized, Equation
(11) is still valid for the spinor of the electron impinging on the drain. However,
we now have to re-calculate the projection of the impinging spinor on the -x-
polarized state in the drain, which will give
sin (θ + π/4) sinθeik(1)
x L + cos (θ + π/4) cosθeik(2)
x L
sin (θ + π/4) cosθeik(1)
x L − cos (θ + π/4) sinθeik(2)
x L
T+x,−x =
=
1
1 −1
√2
eikzW cos(2θ)(cid:20)eik(2)
1
2
x L − eik(1)
x L(cid:21) .
13
eikzW
(26)
This yields that
T+x,−x2 =
cos2(2θ)
2
[1 − cos(ΘL)] =
1
2 "1 −
k2
z
k2
0#{1 − cos [Θ (k0, kz, α [VG]) L]} .
(27)
Since the probability of injecting a +x-polarized spin at the source contact is
(1 + ηS) /2 and the probability of its transmitting into the -x-polarized band
at the drain contact is (1 − ηD) /2, the corresponding contribution to ∆G will
be
[∆G]+x,−x =
(1 + ηS) (1 − ηD)
4
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F#{1 − cos [Θ (kF , kz, α [VG]) L]}.
(28)
Now, consider the situation when the source injects a -x-polarized spin, but it
transmits into the +x-polarized band in the drain.
In this case, the spin injected from the source contact is -x-polarized and we
will have to recalculate the spinor of the electron impinging on the drain.
Equation (9) will now be replaced by
1
√2
1
−1
= C ′
1
sinθ
cosθ
+ C ′
2
−cosθ
sinθ
,
which yields
C ′
1 = sin (θ − π/4)
C ′
2 =−cos (θ − π/4) .
Therefore, the spinor of the electron impinging on the drain is
14
(29)
(30)
[Ψ]drain = C ′
1
sinθ
cosθ
i(cid:16)k(1)
x L+kzW(cid:17) + C ′
2
e
−cosθ
sinθ
i(cid:16)k(2)
x L+kzW(cid:17)
e
= eikzW
sin (θ − π/4) sinθeik(1)
x L + cos (θ − π/4) cosθeik(2)
x L
sin (θ − π/4) cosθeik(1)
x L − cos (θ − π/4) sinθeik(2)
x L
,
(31)
The projection of this spinor on the +x-polarized state in the drain gives
sin (θ − π/4) sinθeik(1)
x L + cos (θ − π/4) cosθeik(2)
x L
x L − cos (θ − π/4) sinθeik(2)
x L
T−x,+x =
=
1
1 1
√2
eikzW cos(2θ)(cid:20)eik(2)
1
2
sin (θ − π/4) cosθeik(1)
x L(cid:21) .
x L − eik(1)
eikzW
(32)
Therefore, once again,
T+x,−x2 =
=
cos2(2θ)
2
1
2 "1 −
[1 − cos(ΘL)]
k2
0# {1 − cos [Θ (k0, kz, α [VG]) L]} .
z
k2
(33)
Since the probability of injecting a -x-polarized spin at the source is (1 − ηS) /2
and the probability of its transmitting into the +x-polarized band at the drain
is (1 + ηD) /2, the corresponding contribution to ∆G is
[∆G]−x,+x =
(1 − ηS) (1 + ηD)
4
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F#{1 − cos [Θ (kF , kz, α [VG]) L]}.
(34)
15
Finally, consider the situation when a -x-polarized electron is injected at the
source and transmits into the -x-polarized band of the drain contact.
In this case, Equation (31) will describe the spinor of the electron impinging
on the drain and the projection of this spinor on the -x-polarized state in the
drain will give
T−x,−x =
1
1 −1
√2
sin (θ − π/4) sinθeik(1)
x L + cos (θ − π/4) cosθeik(2)
x L
sin (θ − π/4) cosθeik(1)
x L − cos (θ − π/4) sinθeik(2)
x L
= eikzW (cid:26)sin2 (θ − π/4) eik(1)
x L + cos2 (θ − π/4) eik(2)
x L(cid:27) .
eikzW
(35)
Consequently, the contribution to ∆G will be
[∆G]−x,−x =
(1 − ηS) (1 − ηD)
4
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F# cos [Θ (kF , kz, α [VG]) L]
.(36)
Using the Principle of Superposition, the total gate voltage dependent con-
ductance modulation will be
∆G =" (1 + ηS) (1 + ηD)
dkz"1 −
q2Wz
2πh
4
kF
×
Z0
(1 − ηS) (1 + ηD)
4
4
(1 + ηS) (1 − ηD)
−
k2
F# cos [Θ (kF , kz, α [VG]) L]
z
k2
−
+
(1 − ηS) (1 − ηD)
4
#
= ηSηD
q2Wz
2πh
kF
Z0
dkz"1 −
k2
z
k2
F# cos [Θ (kF , kz, α [VG]) L] .
(37)
Therefore, non-ideal spin injection and filtering reduces the amplitude of any
non-local voltage modulation by the factor ηSηD.
16
References
[1] S. Datta and B. Das, Appl. Phys. Lett., 56, 665 (1990).
[2] H. C. Koo, J. H. Kwon, J. Eom, J. Chang, S. H. Han and M. Johnson, Science,
325, 1515 (2009).
[3] S. Bandyopadhyay, arXiv:cond-mat/0911.0210.
[4] S. Datta, private communication.
[5] F. Capasso, S. Sen, F. Beltram and A. Y. Cho, in Physics of Quantum Electron
Devices, Springer Series in Electronics and Photonics, Vol. 28, Ed. F. Capasso,
(Springer-Verlag, Berlin-Heidelberg, 1990), Chapter 7.
[6] A. N. M. Zainuddin, S. Hong, L. Siddiqui and S. Datta, arXiv:cond-
mat/1001:1523.
[7] M. Cahay and S. Bandyopadhyay, Phys. Rev. B., 68, 115316 (2003).
17
)
s
t
i
n
u
.
b
r
a
(
G
)
s
t
i
n
u
.
b
r
a
(
G
Fig. 1. Plots of channel conductance modulation ∆G of a two-dimensional SPIN-
FET versus gate voltage VG. The solid lines are theoretical results calculated from
Equation (2) where we have used the values of m∗, kF and α [VG] reported in ref-
erence [2] and the points are (approximated) experimental results reported in [2].
The amplitudes of the theoretical plots are adjusted to match the experimental
results as closely as possible. Note that neither the periods, nor the phases of the
experimental plots agree very well with the theoretical plots. The plots are for two
different channel lengths of L = 1.65 µm and 1.25 µm used in the experiments of
ref. [2]. The experiments were carried out at low temperatures and biasesThe spin
splitting energy in the dot specified in Fig. 2 as a function of Rashba interaction
strength.
18
D
D
Source
Drain
(a)
z
x
y
kz
kt
(b)
kx
Fig. 2. (a) A two-dimensional SPINFET channel, and (b) the wavevector compo-
nents in the plane of the channel.
19
Energy
E
(1)
kt
(2)
k t
Wavevector kt
Fig. 3. Schematic representation of the dispersion relations in the two spin split
bands, under the influence of the gate voltage inducing Rashba interaction in the
channel.
20
|
1303.1570 | 3 | 1303 | 2013-09-26T23:22:56 | Localized Many-Particle Majorana Modes with Vanishing Time-Reversal Symmetry Breaking in Double Quantum Dots | [
"cond-mat.mes-hall"
] | We introduce the concept of spinful many-particle Majorana modes with local odd operator products, thereby preserving their local statistics. We consider a superconductor-double-quantum-dot system where these modes can arise with negligible Zeeman splitting when Coulomb interactions are present. We find a reverse Mott-insulator transition, where the even- and odd-parity bands become degenerate. Above this transition, Majorana operators move the system between the odd-parity ground state, associated with elastic cotunneling, and the even-parity ground state, associated with crossed Andreev reflection. These Majorana modes are described in terms of one, three, and five operator products. Parity conservation results in a 4% periodic supercurrent in the even state and no supercurrent in the odd state. | cond-mat.mes-hall | cond-mat |
Localized many particle Majorana fermions with vanishing time reversal symmetry breaking in
double quantum dots
Anthony R. Wright∗
School of Mathematics and Physics, University of Queensland, Brisbane, 4072 Queensland, Australia
Menno Veldhorst†
ARC Centre of Excellence for Quantum Computation and Communication Technology,
School of Electrical Engineering & Telecommunications,
The University of New South Wales, Sydney 2052, Australia
(Dated: March 18, 2013)
We introduce the concept of spinful many-particle Majorana fermions. These emergent particles are nonlocal
in even operator products, but local in odd operator product s, thereby preserving their local statistics. We
consider a superconductor - double quantum dot system where these modes can arise in the presence of vanishing
Zeeman splitting. We find a reverse Mott-insulator transiti on, where the even parity band crosses the odd parity
band. Above this transition, Majorana operators move the system between the odd parity ground state, associated
with elastic co-tunneling, and the even parity ground state, associated with crossed Andreev reflection. These
Majorana modes are described in terms of one, three and five op erator products. Parity conservation results in
a 4π periodic supercurrent in the even state and no supercurrent in the odd state. The necessity of only small
magnetic fields and the broad parameter space where Majorana
fermions appear simpli fies the experimental
realization greatly, paving the way towards the detection of the Majorana fermion.
The prediction for the existence of Majorana fermions [1]
has attracted enormous attention in condensed matter physics
in recent years [2–7]. Allured by the possibility of con-
structing topological qubits for quantum computation [2, 4],
a plethora of schemes promising the positive identification
of Majorana fermions has emerged [8–12]. Superconductors
provide intrinsic electron-hole coupling resulting in cha rge-
less quasiparticles, and most proposals to realize Majorana
fermions are based on this principle. Standard s-wave super-
conductors do not support a zero energy Majorana mode. In
the presence of strong Rashba spin-orbit coupling, however,
an effective spinless p-wave superconductor can arise. This
idea was first recognized by Fu and Kane, who considered
the interface of a superconductor and a topological insulator
[5]. A topological state harnessing Majorana modes can also
arise using semiconducting nanowires in the presence of Zee -
man and Rashba fields [6, 7]. Experimentally, supercurrents
[13], Fraunhofer patterns and Shapiro steps [14], SQUIDs
[15], and zero bias conductance peaks [16] have been ob-
served in topological insulator systems, which together wi th
the zero bias conductance peaks in nanowire systems [17] pro -
vide prospects for the observation of the Majorana fermion,
but to date, no conclusive evidence has been observed.
Quantum dots can also be used to realize localized Ma-
jorana modes [11, 18, 19]. Quantum dot proposals include
the use of Rashba coupling [11], but the presence of an
anisotropic magnetic field can also mimic this effect [19].
Although these proposals are already experimentally quite
promising, the strong Rashba or anisotropic magnetic fields
required makes them very challenging and limits material
flexibility. For example, anisotropic magnetic fields only r
e-
sult in spinless localized Majorana modes in fields EZ ≫ ∆,
with ∆ the induced superconducting gap. Nonetheless, here
we will show that in the presence of small anisotropic mag-
FIG. 1: (a) Schematic representation of the device considered. Two
superconductors (with phase difference φ− ) are connected via a dou-
ble quantum dot with on-site Coulomb repulsion U and in the pres-
ence of a magnetic field EZ,⊥ ∼ kB T . A nanomagnet introduces a
localized EZ,k , which rotates the field near one of the two dots, and
we define θ to be the relative angle between the local fields. (b) Tun-
ing to the degeneracy of the ground state of the double quantum dot
system. The color scale represents the energy gap between the lowest
even and odd energy eigenstates, Eg = (ǫ1 − ǫ2 )/∆. The parameters
are U = 3∆ = −3t. The degenerate ground states support many-
particle Majorana fermions with local statistics, for all θ 6= 0. The
system is symmetric around φ = π , but not around θ = π/2, since
the presence of regular Andreev reflection distinquishes th e quantum
dots having parallel and antiparallel spin axes.
netic fields,
B ∼ kB T , a new arena emerges: the concept
of spinful many-particle Majorana fermions. These Majorana
fermions are still localized in their odd operator products , and
thereby preserve the local statistics of spinless proposal s [21].
We consider an s-wave superconductor - double quantum
dot system as depicted in Fig.[1], where crossed Andreev re-
flection (CAR) dominates elastic co-tunneling (EC), a regim e
that is readily achieved [22–26]. Double electron occupanc y
in a quantum dot, as we will show, inhibits, but does not pre-
vent the appearance of Majorana fermions. On-site Coulomb
repulsion U can be used to tune the system from the dou-
ble occupancy regime, which we de fine as U = 0, towards
the single electron regime, U = ∞. Upon increasing the
Coulomb repulsion, we find a clear phase transition where it
becomes possible to tune the even and odd parity states to be-
come degenerate, see Fig.[2]. This is reminiscent of a Mott
metal-insulator transition, however in reverse, where the on-
site Coulomb repulsion drives the system toward having a de-
generate ground state. Above this transition, we can always
tune towards the degeneracy point using a second supercon-
ductor with a phase difference φ− . Many-particle Majorana
fermions appear right at the crossing and are described by on e,
three and five operator products. The even operator products
are nonlocal, while the odd operator products are local for a ll
angles θ, the angle between the local fields on the dots.
The requirements of only small fields and the use of quan-
tum dots opens large material flexibillity. For example, the
system could be based on III-V heterostructures [27], but also
on materials such as silicon and diamond with large fraction s
of non-magnetic nuclei which increase spin coherence times
[28]. In order to elucidate the novel many-particle physics that
emerges, we will take all results in the limit EZ → 0, valid
as T → 0, meaning we have spinful, spin rotation symmetric,
ground states.
The superconductor - double quantum dot system with on-
site Coulomb repulsion in the presence of an anisotropic mag -
netic field, Fig.[1], is described by the Hamiltionian
H = HS + HD + HT + HZ .
(1)
The superconducting part, HS , is
HS =
k,i,σ c†
k,i,σ ck,i + ∆eiφi c†
ǫk,i,σ c†
−k,i, ¯σ .
2
Xi=1 Xk,σ
Here, ¯σ denotes the spin that is not σ . The double quantum
dot is described by, HD ,
(2)
HD =
2
Xj=1 Xσ
j,σ cj,σ + Xj
ǫj c†
with U the onsite Coulomb repulsion, and ǫj the onsite energy
of the j th dot. The third term introduces the tunneling and is
described by, HT ,
U nj↑ nj,↓ ,
(3)
Γij c†
i,σ cj,σ .
HT = Xi,j,σ
The overlap integral Γij is between the ith quasiparticle in the
superconducting lead, and the j th dot. Finally,
(4)
2
+∆ei
of Ref.[29], to obtain the effective Hamiltonian of the double
dot-superconductor system.
Before presenting the final effective theory, we first con-
sider the anisotropic magnetic field, which de fines the spin
axes. The angle θ, the angle between the two local magnetic
fields, modify EC and CAR as follows:
tc†
1,σ c2,σ + ¯σ t sin(θ/2)c†
1,σ c2,σ → t cos(θ/2)c†
1,σ c2, ¯σ
∆c1,σ c2, ¯σ → σ∆ sin(θ/2)c1,σ c2,σ + ∆ cos(θ/2)c1,σ c2, ¯σ ,
(6)
where σ, ¯σ = ±, and t, ∆ are the effective EC hopping and
CAR Cooper pairing amplitudes [29]. The final effective
Hamiltonian of the dot-superconductor system is
nj,↑nj,↓ − EZ Xj (cid:0)nj,↑ − nj,↓ (cid:1)
j,σ cj,σ + U Xj
Hef f = Xj,σ
ǫj c†
+ Xσ (cid:16)t cos(θ/2)c†
1,σ c2,σ + ¯σ t sin(θ/2)c†
1,σ c2, ¯σ
φ−
φ+
2 (cid:1)(cid:0)σ sin(θ/2)c†
2,σ + cos(θ/2)c†
1,σ c†
1,σ c†
+∆ei
2, ¯σ (cid:1)
2 cos(cid:0)
φ−
φ+
j, ¯σ + h.c.(cid:17),
2 (cid:1) Xj
c†
j,σ c†
2 cos(cid:0)
(7)
where φ± = φ1 ± φ2 is the sum (difference) between the
phases of the two superconductors. From hereon we will as-
sume that the onsite energy of the two dots has been tuned to
the chemical potential of the superconductors, which we de-
fine as our zero of energy ( ǫ1 = ǫ2 = 0). A discussion of the
effects of the onsite energies deviating from this ‘sweet spot’
has been presented elsewhere [19].
The Hamiltonian Eq. [7] cannot be decomposed into to-
tal spin sectors, as the anisotropic magnetic field mixes the se.
However, the fermion parity is a conserved quantity. The to-
tal Hilbert space has dimension (2nσ )nj /2 = 8 for each par-
ity sector (i.e. even and odd), which makes exact diagonal-
ization particularly straight-forward. In the occupation rep-
resentation, we can de fine an occupation basis
1, 2i, where
the numbers correspond to the two dots, and we will use ar-
rows to denote the spin, and then we can construct a basis
of the sixteen possible con figurations. In the U → ∞ limit,
the total Fock space is restricted to nine possible states, 5 for
even parity, and 4 for the odd, which can be easily solved
to give the eigenstates that determine the ground state, in the
even and odd sectors. We solve for finite Zeeman splitting,
and obtain in the odd parity sectors that the eigenstates are
ǫodd = ±t ± EZ . We take the limit EZ → 0 in the low-
est energy odd parity state to obtain the limit of vanishingly
small magnetic fields of the ground state even and odd parity
wavefunctions
HZ = −EZ Xj (cid:0)c†
j,↑ cj,↑ − c†
j,↓ cj,↓ (cid:1).
The Hamiltonian is quadratic in the leads, and so we can inte-
grate out the superconducting leads, following the procedu re
(5)
Ψeven =
√2e
1
2 h±
iφ+
2 0, 0i + cos(θ/2)(cid:0) ↑, ↓i + ↓, ↑i(cid:1)
+ sin(θ/2)(cid:0) ↑, ↑i − ↓, ↓i(cid:1)i(8)
3
U=∞
U=20∆
U=0
1
0.5
0
J
/
J
0
-0.5
-1
0
0.5
Γ
1
φ- /π
1.5
2
FIG. 3: Josephson supercurrent of the even parity sector at T =
0.01∆ for the limiting cases U = 0 and ∞ and intermediate
U = 20∆, with ∆ = t and θ = π/2. When U = 0, reg-
ular Andreev reflection dominates and the Josephson current
is 2π
periodic and no Majorana fermions exist at all. When U → ∞, reg-
ular Andreev reflection is completely forbidden, there zero energy
states are local odd operator Majorana fermions, and crosse d An-
dreev reflection results in a 4π periodic Josephson effect. For finite
U , hybridization between the even parity eigenstates leads to a sharp
transition at φ = π . For large U , Zener tunneling Γ can restore the
4π periodicity, but Majorana modes are always present. J0 = e∆/
is the maximum supercurrent at U = 0. The odd parity supercurrent
is always 2π periodic, and small, vanishing completely in the limit
U → ∞.
and ni,σ = c†
(θ) has a similar form with site
i,σ ci,σ . γ U→∞
2
indices 1, 2 interchanged. Eq. [11] has the form of a usual
Majorana operator [21], except that the phase dependence is
the total phase of the two superconductors divided by four, or
equivalently half the average phase of the two superconduc-
tors.
The form of three-operator Majorana fermion in Eq. [10]
is nonlocal in general. However, it is interesting to note that
the relative phase of the Majorana components, which is re-
sponsible in general for their non-Abelian braiding statis tics,
is still localized, as the nonlocality of the Majoranas as de fined
above is restricted to number operators only. It is assumed, in
the above Majorana expressions, that the system is projected
into the singly occupied Fock space, since U → ∞.
When U is finite, a phase transition occurs at a critical
value of the on-site repulsion. For Coulomb repulsions be-
low this critical point, the ground state is non-degenerate , with
the lowest energy even parity state always having lower en-
ergy than the lowest energy odd parity state. In Fig.[2] we
have plotted the excitation energy of the first excited state
Eg = (ǫ2−ǫ1)/∆ as a function of onsite Coulomb repulsion,
and relative spin angle θ. The phase transition corresponds to
the vanishing of the excitation gap at a critical value of on-site
Coulomb repulsion. This critical value varies as a function of
angle, but for all angles it is quite small, being of the same
order as the effective pairing ∆.
For finite on-site Coulomb repulsion, the structure of the
ground state, and Majorana states are much more complicated
than in the in finite U case, though qualitatively do not differ.
The odd parity ground state develops a finite weighting on the
FIG. 2: Phase diagram showing the onset of a degenerate ground
state energy gap as a function of on-site Coulomb repulsion, for
∆ = t. Upon increasing the on-site Coulomb repulsion U , a re-
verse Mott-insulator transition occurs where the lowest energy state
changes from even to odd parity. At the crossing point, Majorana
operators move the system between the degenerate ground sta tes.
with corresponding eigenvalue ǫeven = ∓√2∆ cos(φ− /2),
and
Ψodd =
1
√2 h sin(θ/4)(cid:0) ↑, 0i + 0, ↑i(cid:1)
− cos(θ/4)(cid:0) ↓, 0i − 0, ↓i(cid:1)i,
with eigenvalue ǫodd = −t (taking t > 0). A degenerate
ground state is obtained when ǫeven = ǫodd . Crucially, for
any t < √2∆, there is always a φ− which can be chosen,
depending on the value of θ, such that a degenerate ground
state can be obtained.
We emphasize that as we are using the occupation number
basis, the ground state is given by the lowest energy eigen-
state, and not the zero energy eigenstate as in the more famil-
iar Bogolubov de-Gennes theory.
The two degenerate ground states have even and odd parity,
respectively, and so are protected from hybridizing when th e
total system conserves particle number parity. When there a re
two degenerate ground states, a pair of Majorana operators
(γ1 , γ2 ) can be constructed which transform the two ground
states into each other, such that γ1Ψodd = Ψeven , for exam-
ple. These Majorana operators are given by
√2 "x(γ1↑ + γ1↓ ) + (cid:16) cos(θ/2)
1
cos(θ/4) − x(cid:17)n2↓γ1↑
(θ) =
+ (cid:16) sin(θ/2)
sin(θ/4) − x(cid:17)n2↑γ1↑ + (cid:16) cos(θ/2)
sin(θ/4) − x(cid:17)n2↑γ1↓
+ x(cid:17)n2↓γ1↓ (cid:21)
− (cid:16) sin(θ/2)
cos(θ/4)
where x = (sin(θ/4) − cos(θ/4))−1 , and
γ φ+
1,↑ = (eiφ+ /4 c†
1,↑ + e−iφ+ /4 c1,↑ ),
γ U→∞
1
(9)
(10)
(11)
terms of the form ↑↓, ↑i, together with the three equivalent
combinations of this, whilst the even parity ground state de-
velops a finite weighting on doubly occupied dots ( ↑↓, 0i
and 0, ↑↓i), together with the four fermion, double occupied
quantum dot pair ↑↓, ↑↓i. The Majorana fermions, how-
ever, retain the same phase locality condition. The Majo-
rana fermions in this case acquire five fermion operator prod -
ucts, together with single and three fermion operator produ cts.
Generically, the Majorana has the form
γ1 = γ φ+
1,↑ (cid:0)a↑ + Xσj
σj nσj + Xσσ′ jj ′
b↑
c↑
σσ′ jj ′ nσj nσ′ j ′ (cid:1)+ ↑↔↓,
(12)
where bσ
σ′ ,σ,j,1 = 0, and when φ = π/2,
σ,1 = cσ
σ,σ′ ,1,j ′ = cσ
all operators where j, j ′ = 2 have coefficient zero. The ap-
pearance of three and five operator products are a clear gen-
eralization of the Majorana fermion concept, which is usually
based on single operator products [20, 21].
The regime where Majorana fermions appear can be found
by analyzing the Josepshon supercurrent through the double
dot system. The Josephson current is calculated from the
derivative of the free energy with respect to the supercondu ct-
ing phase difference φ− [30]. In contrast to topological su-
perconductor systems, the odd parity ground states dispers e
only very weakly with superconducting phase difference, and
are strictly 2π periodic. At U → ∞, they are completely flat,
as CAR cannot possibly excite the odd parity ground state.
The absence of supercurrent in the odd parity state will be a
strong signature of parity conservation. In Fig.[3] we have
plotted the Josephson current for the even parity system as a
function of superconducting phase difference for the U → ∞
case, where Majorana fermions are present (i.e. CAR splits
the Cooper pairs and a gapless super-current flows between
the superconductors) versus the case of regular Andreev re-
flection where the final term in Eq. [7] dominates, as in the
U = 0 case. The periodicity of the two cases is clearly visi-
ble. We have also plotted an intermediate case, U = 20∆,
which is 2π periodic in the adiabatic limit. We note that
while in a p-wave superconductor the boundstates are pro-
tected by fermion parity, the dispersive bound states in the
double quantum dot system have both even parity, and scat-
tering between the branches is possible even when the total
parity is conserved. Interestingly, the matrix element coupling
the branches is a two Majorana operator product. The anoma-
lous current phase relationship, however, can still be obse rved
in non-equilibrium measurements [31] or using dc SQUIDs
[32, 33].
At finite U , the bonding and anti-bonding even parity states
hybridize as φ− drives them toward a degeneracy point, nat-
urally resulting in a signal where the bonding state tunnels
into the anti-bonding, and one where it does not, as shown in
Fig.[4]. A superposition of a 2π periodic signal and a 4π pe-
riodic signal is expected in this case, since by means of Zener
tunneling Γ the quasiparticle can overcome the hybridization
gap [34, 35]. This transition from 4π to 2π periodicity is not
4
FIG. 4: Energy eigenstates of the double dot system for U =20∆,
∆ = t and θ = π/2. The +, − signs indicate the even par-
ity ground state bonding and antibonding state, determined by the
relative sign between the empty and two-fermion occupations, for
example Ψ± = a0000i ± b1010i + .... At infinite U , the two
states are orthogonal, but at finite U the two develop an anticross-
ing. The arrow indicates the evolution of the ground state that gives
a 4π periodic Josephson effect, which is still possible for small hy-
bridization gaps by means of Zener tunneling Γ. As the bonding and
anti-bonding states become increasingly hybridized, the 2π periodic
Josephson effect becomes dominant. We emphasize that as we are
using the occupation number basis, the ground state is given by the
lowest energy eigenstate, and not the zero energy eigenstate as in the
more familiar Bogolubov de-Gennes theory.
a transition where Majorana modes disappear, but a transition
where the five operator products vanish. Also, finite
U results
in a weakly dispersing odd parity ground state, clearly visi -
ble in Fig.[4], and introduces a supercurrent in the odd pari ty
state.
In conclusion, we have presented an experimentally fea-
sible scenario whereby many particle Majorana fermions in
double quantum dots may be realized. We have shown that
a large Zeeman splitting is not necessary to realize nonloca l
Majorana fermions in double quantum dots, due to the onsite
Coulomb repulsion, and in fact a small Zeeman field is suffi-
cient. Furthermore, we have shown that by connecting two out
of phase superconductors to both quantum dots, the parame-
ter space can be tuned so as to obtain a degenerate ground
state protected by parity, with Majorana operators connect -
ing the ground state. The Majorana operators are local in the
odd operators, which determine their statistics, for any an gle
θ. The effect of a finite, rather than in finite, on-site interac
-
tion does not affect the locality conditions of the Majoranas,
nor their parity. We expect that the proposed device will ex-
pand Majorana physics even further, not in the least due to
its spinful ground state, and the fact that the corresponding
Majorana fermions are constructed from one, three, and five
fermion creation/annihilation operator products, togeth er with
their Hermitian conjugates.
We would like to thank Ross H. McKenzie, Jacopo Saba-
tini and Andrew Dzurak for enlightening discussions. ARW
is financially supported by a University of Queensland Post-
doctoral Reasearch Fellowship. MV is financially supported
by the Australian Research Council Centre of Excellence
for Quantum Computation and Communication Technology
(project number CE11E0096), the US Army Research Office
(W911NF-13-1-0024) and the Netherlands Organization for
Scientific Research (NWO) by a Rubicon grant.
∗ Electronic address: a.wright7@uq.edu.au
† Electronic address: m.veldhorst@unsw.edu.au
[1] E. Majorana, Nuovo Cimento 14, 171-184 (1937).
[2] G. Moore, and N. Read, Nucl. Phys. B360, 362 (1991).
[3] A. Kitaev, Ann. Phys. (N.Y.) 303, 2 (2003).
[4] C. Nayak , S. H. Simon, A. Stern, M. Freedman, and S. Das
Sarma, Rev. Mod. Phys. 80, 1083 (2008).
[5] L. Fu and C.L. Kane, Phys. Rev. Lett. 100, 096407 (2008).
[6] J.D. Sau, R.M. Lutchyn, S. Tewari, S.D. Sarma, Phys. Rev. Lett.
104, 040502 (2010).
[7] J. Alicea, Phys. Rev. B 81, 125318 (2010).
[8] S. Das Sarma, S. M. Freedman, and C. Nayak, Phys. Rev. Lett.
94, 166802 (2005).
[9] A. R. Akhmerov, J. Nilsson, and C. W. J. Beenakker, Phys. Rev.
Lett. 102, 216404 (2009).
[10] Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett. 105,
177002 (2010).
[11] J. D. Sau and D. Das Sarma, Nature Comm. 3, 964 (2012).
[12] A. R. Wright and B. Rosenow, Phys. Rev. B 86, 115329 (2012).
[13] B. Sac´ep´e, J.B. Oostinga, J.L. Li, A. Ubaldini, N.J.G. Couto, E.
Giannini, and A.F. Morpurgo, Nature Comm. 2, 575 (2011).
[14] M. Veldhorst, M. Snelder, M. Hoek, T. Gang, X.L. Wang,
V.K. Guduru, U. Zeitler, W.G. v.d.Wiel, A.A. Golubov, H.
Hilgenkamp, and A. Brinkman, Nature Materials 11, 417
(2011).
5
[15] M. Veldhorst, C.G. Molenaar, X.L. Wang, H. Hilgenkamp, and
A. Brinkman, Appl. Phys. Lett. 100, 072602 (2012).
[16] S. Sasaki, M. Kriener, K. Segawa, K. Yada, Y. Tanaka, M. Sato,
and Y. Ando, Phys. Rev. Lett. 107, 217001 (2011).
[17] V. Mourik, K. Zuo, S.M. Frolov, S.R. Plissard, E.P.A.M.
Bakkers, and L.P. Kouwenhoven, Science 336, 1003 (2012).
[18] I.C. Fulga, A. Haim, A.R. Akhmerov,
and Y. Oreg,
arXiv:1212.1355 (2012).
[19] M. Leijnse, and K. Flensberg, Phys. Rev. B 86, 134528 (2012).
[20] C. Nayak and F. Wilczek, Nucl. Phys. B479, 529 (1996).
[21] D. A. Ivanov, Phys. Rev. Lett. 86, 268 (2001).
[22] J.M. Byers and M.E. Flatt ´e, Phys. Rev. Lett. 74, 306 (1995).
[23] G. Deutscher and D. Feinberg, Appl. Phys. Lett. 76, 487 (2000).
[24] L. Hofstetter et al., Nature 461, 960 (2009).
[25] L. G. Herrmann et al., Phys. Rev. Lett. 104, 026801 (2010).
[26] M. Veldhorst and A. Brinkman, Phys. Rev. Lett. 105, 107002
(2010).
[27] R. Hanson, L.P. Kouwenhoven, J.R. Petta, S. Tarucha, and
L.M.K. Vandersypen, Rev. Mod. Phys. 79, 1217 (2007).
[28] F. Zwanenburg, A.S. Dzurak, A. Morello, M.Y. Simmons,
L.C.L. Hollenberg, G. KLimeck, S. Rogge, S.N. Coppersmith,
and M.A. Eriksson arXiv arXiv:1206.5202v1.
[29] A. V. Rozhkov and D. P. Arovas, Phys. Rev. Lett. 82, 2788
(1999).
[30] S. Droste, S. Andergassen, and J. Splettstoesser, J. Phys.: Con-
dens. Matter 24, 415301 (2012).
[31] D.M. Badiane, M. Houzet, and J.S. Meyer, Phys. Rev. Lett. 107,
177002 (2011).
[32] M. Veldhorst, C.G. Molenaar, C.J.M. Verwijs, H. Hilgenkamp,
and A. Brinkman, Phys. Rev. B 86, 024509 (2012).
[33] M. Veldhorst, M. Snelder, M. Hoek, C.G. Molenaar, D.P.
Leusink, A. A. Golubov, H. Hilgenkamp, and A. Brinkman,
Phys. Stat. Sol. RRL 7, 26 (2013).
[34] A. Jacobs, R. Kummel, Phys. Rev. B 71, 184504 (2005).
[35] H. Kroemer, Superlattices Microstruct. 25, 877 (1999).
|
1507.01410 | 1 | 1507 | 2015-07-06T12:14:57 | Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors | [
"cond-mat.mes-hall"
] | We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. | cond-mat.mes-hall | cond-mat |
Helicity sensitive terahertz radiation detection by
dual-grating-gate high electron mobility transistors
P. Faltermeier,1 P. Olbrich,1 W. Probst,1 L. Schell,1 T. Watanabe2,
S. A. Boubanga-Tombet2, T. Otsuji2, and S. D. Ganichev1
1 Terahertz Center, University of Regensburg, 93040 Regensburg, Germany and
2 Research Institute of Electrical Communication, Tohoku University, 980-8577 Sendai, Japan
We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz
(THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility
transistors (HEMT). For a circular polarization the current measured between source and drain
contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized
radiation the total current is described by superposition of the Stokes parameters with different
weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent
can be defined either by the Stokes parameter defining the radiation helicity or those for linear
polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-
dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the
combined action of a spatially periodic in-plane potential and spatially modulated light. The results
provide a proof of principle for the application of DGG HEMT for all-electric detection of the
radiation's polarization state.
PACS numbers: 78.67.De,07.57.Kp,85.30.Tv,85.35.-p
I. INTRODUCTION
(FETs) have
Field-effect-transistors
emerged as
promising devices for sensitive and fast room tempera-
ture detection of terahertz (THz) radiation [1, 2]. They
are considered as a good candidate for real-time THz
imaging and spectroscopic analysis [3, 4] as well as future
THz wireless communications [5]. Devices employing
plasmonic effects in FETs have already been applied for
room temperature detection of radiation with frequencies
from tens of GHz up to several THz and enable the com-
bination of individual detectors in a matrix. They are
characterized by high responsivity (up to a few kV/W),
low noise equivalent power (down to 10 pW/√Hz), fast
response time (tens of picoseconds) and large dynamic
range (linear power response up to 10 kW/cm2), see e.g.
Ref.[2, 6 -- 11]. The operation principle of FET THz de-
tectors used so far is based on the nonlinear properties of
the two-dimensional (2D) plasma in the transistor chan-
nel. The standard Dyakonov-Shur model [12] assumes
that radiation is coupled to the transistor by an effective
antenna, which generates an ac voltage predominantly
on one side of the transistor. Both resonant [13] and
non-resonant [14] regimes of THz detection have been
studied. While research aimed to development of THz
FET detectors is focused on single gate structures re-
cently several groups have shown that higher sensitivi-
ties are expected for structures with periodic symmetric
and asymmetric metal stripes or gates [9, 15 -- 23]. In par-
ticular, dual-grating-gate FET are considered as a good
candidate for sensitive THz detection. The first data
obtained on dual-gated-structures demonstrated a sub-
stantial enhancement of the photoelectric response and
an ability to control detector parameters by variation of
individual gate bias voltage [9]. At the same time, THz
electric field applied to FETs with asymmetric periodic
dual gate structure is expected to give rise to electronic
ratchet effects [23 -- 27] (for review see [25]) and plasmonic
ratchet effects [28]. Besides improving the figure of merits
of FET detectors, ratchet effects may also result in new
functionalities.
In particularly, they may induce pho-
tocurrents driven solely by the radiation helicity.
Here, we report on the observation of a radiation he-
licity sensitive photocurrent excited by THz radiation
in dual-grating-gate InAlAs/InGaAs/InAlAs/InP high
electron mobility transistors (HEMT). We show that arti-
ficial non-centrosymmetric microperiodic structures with
a two-dimensional electron system excited by THz ra-
diation exhibit a dc photocurrent caused by the lateral
asymmetry of the applied static potential and terahertz
electric field. We demonstrate that depending on gate
voltages applied to the individual gratings of the dual-
grating-gate the response can be proportional to either
the Stokes parameters [29] defining the radiation helicity
or those for linear polarization. As an important result,
for a wide range of gate voltages we observed a pho-
tocurrent jC being proportional to the radiation helicity
Pcirc = (Iσ+ − Iσ− )/(Iσ+ + Iσ− ), where Iσ+ and Iσ− are
intensities of right- and left-handed circularly polarized
light. For the circular photocurrent jC measured between
source and drain contacts changes its sign with the inver-
sion of the radiation helicity. This observation is of par-
ticular importance for a basic understanding of plasmon-
photogalvanic and quantum ratchet effects. It also has a
large potential for the development of an all-electric de-
tector of the radiation's polarization state, which was so
far realized applying less sensitive photogalvanic effects
only [30 -- 32]. The observed phenomena is discussed in
the framework of electronic ratchet [22, 23, 25 -- 27] and
plasmonic ratchet effects excited in a 2D electron system
with a spatially periodic dc in-plane potential [9, 22, 28].
II. EXPERIMENTAL TECHNIQUE
2
The
based
on
device
is
high-electron
an
In-
structure
mobility
AlAs/InGaAs/InAlAs/InP
transistor
(HEMT) and incorporates doubly inter-
digitated grating gates (DGG) G1 and G2. A sketch and
a photograph of the gates are shown in Fig. 1(a) and
inset in Fig. 1(b). The 2D electron channel is formed in
a quantum well (QW) at the heterointerface between a
16 nm-thick undoped InGaAs composite channel layer
and a 23 nm-thick, Si-doped InGaAs carrier-supplying
layer. The electron density of the 2DEG is about
3 × 1012 cm2, electron effective mass normalized on free-
electron mass m0 and room temperature mobility are
m/m0 = 0.04 and µ0 = 11000 cm2/(Vs), respectively.
The DGG gate is formed with 65 nm-thick Ti/Au/Ti by
a standard lift-off process. The footprint of the narrower
gate fingers G1 was defined by an E-beam lithography,
whereas that of the wider gate fingers G2 was defined
by a photolithography.
In all studied structures, the
metal fingers of the grating gates G1 and G2 have the
same length, being dG1 = 200 nm and dG2 = 800 nm.
The spacing between narrow and wide DGG fingers is
asymmetric with aG1 = 200 nm and aG2 = 400 nm, see
Fig. 1. The size of the active area, covered with the
grating is about 20 µm×20 µm. Ohmic contacts, forming
source and drain of HEMTs, were fabricated by highly
doped 15 nm thick InAlAs and InGaAs layers. The axis
along the gate's fingers is denoted as x and that along
source and drain as y. The characteristic source/drain
current - gate voltage dependence obtained by transport
measurement is shown for sample #A in Fig. 1(b).
All experiments are performed at room temperature.
The HEMT structures were illuminated with polarized
THz and microwave (MW) radiation at normal
inci-
dence. For optical excitation we used low power cw
optically pumped CH3OH THz laser [33, 34] and Gunn
diodes providing monochromatic radiation with frequen-
cies f = 2.54 THz and 95.5 GHz, respectively. The radia-
tion peak power P , being of the order of several milliwats
at the sample's position, has been controlled by pyro-
electric detectors and focused onto samples by parabolic
mirrors (THz laser) or horn antenna (Gunn diode). The
spatial beam distribution of THz radiation had an al-
most Gaussian profile, checked with a pyroelectric cam-
era [35, 36]. THz laser radiation peak intensity, I, for
laser spot being of about 1.2 mm diameter on the sam-
ple, was I ≈ 8 W/cm2. The profile of the microwave
radiation and, in particular, the efficiency of the radia-
tion coupling to the sample couldn't be determined with
satisfactory accuracy. Thus, all microwave data are given
FIG. 1: (a) Sketch of the dual-grating-gate HEMT. Cross-
section of the structure shows the layer sequence and indicates
the width of the fingers (d1/2) and the fingers spacings (a1/2).
THz radiation at 2.54 THz is applied at normal incidence.
(b) Drain-to-source current as a function of the gate voltage
UG1 measured at UG2 = 0 V. Inset shows the photograph
of the structure. Here G1/G2, S and D denote first/second
gate, source and drain, respectively. Part of G1/G2 structure
is highlighted by yellow lines for visualization.
in arbitrary units. The polarization state of THz radia-
tion has been varied applying crystal quartz λ/4- or λ/2-
plates [37]. To obtain circular and elliptically polarized
light the quarter-wave plate was rotated by the angle,
ϕ, between the initial polarization plane and the optical
axis of the plate. The radiation polarization states for
several angles ϕ are illustrated on top of Fig. 2. Orienta-
tion of the linearly polarized radiation is defined by the
azimuth angle α, with α = ϕ = 0 chosen in such a way
that the electric field of incident linearly polarized light
is directed along x-direction. Different orientation of lin-
early polarized MW radiation were obtained by rotation
of a metal wire grid polarizer. The photocurrent excited
between source and drain is measured across a 50 Ω load
resistor applying the standard lock-in technique.
III. PHOTOCURRENT EXPERIMENT
Illuminating the structure with elliptically (circular)
polarized radiation of terahertz laser operating at fre-
quency f = 2.54 THz we observed a dc current strongly
depending on the radiation polarization. Figure 2(a)
shows the photocurrent as a function of the phase an-
gle ϕ defining the radiation polarization state. The data
are obtained for zero gate voltage at the gate 2, UG2 = 0
3
FIG. 3: (a) THz radiation induced normalized photocurrent
jy/I as a function of the angle ϕ defining the radiation helic-
ity. The current is measured for comparable voltages applied
to the first (UG2 = −1.1 V) and the second (UG2 = −0.92 V)
gates. Full line shows fit to the total current calculated af-
ter Eq. (1). The ellipses on top illustrate the polarization
states for various ϕ. Right inset shows amplitudes of pho-
tocurrent contributions jC/I, driven by the light helicity, and
j1/I (j2/I),
induced by linear polarization, as a function
of the gate voltage UG1 or UG2. Upper inset schematically
shows corresponding gate potentials. Dashed lines are guide
for the eye indicating the potential asymmetry in y-direction.
(b) shows amplitudes of the photocurrent contributions jC/I,
driven by the light helicity, as a function of the gate voltage
UG1 (UG2 = 0) measured for three different structures #A,
#B, and #C. The inset shows photovoltage measured in sam-
ple #D across 50 Ω load resistance (RL ≪ Rs) and directly
from the sample over the lock-in amplifiers input resistance
being much larger than the sample resistance Rs. Note that
the former signal is multiplied by factor 25.
rameters change after
cos 4ϕ + 1
s0 ≡ Ex2 + Ey2,
s1 ≡ Ex2 − Ey2 =
xEy =
s2 ≡ ExE ∗
xEy) = −Pcirc = − sin 2ϕ ,
s3 ≡ i(ExE ∗
y + E ∗
y − E ∗
2
,
sin 4ϕ
,
2
(2)
(3)
(4)
(5)
Here s0 determines the radiation intensity, s1 and s2 de-
FIG. 2: THz radiation induced normalized photocurrent jy/I
as a function of the angle ϕ defining the radiation helicity.
The current is measured for different voltages applied to the
first and second gates. (a) shows the data for UG1 = −1.06 V
at gate 1 and zero gate voltage at gate 2.
(b) shows the
photocurrent measured for zero gate voltage at gate 1 and
UG2 = −0.9 V. Full lines show fits to the total current calcu-
lated after Eq. (1). The ellipses on top illustrate the polariza-
tion states for various ϕ. Insets show amplitudes of photocur-
rent contributions jC/I, driven by the light helicity, and j1/I
(j2/I), induced by linear polarization, as a function of the
gate voltages UG1 or UG2. Second set of the insets schemat-
ically show corresponding gate potentials. Dashed lines are
guide for the eye indicating the potential asymmetry in y-
direction. Note that presence of the metal gates results in a
nonzero potential even for UG = 0.
and UG1 = -1.06 V. The principal observation is that for
right- (σ+) and left-handed (σ−) polarizations, i.e., for
ϕ = 45◦ and 135◦, the signs of the photocurrent jy are
opposite. The overall dependence jy(ϕ) is well described
by
jy(ϕ) = j0s0 + j1s1(ϕ) + j2s2(ϕ) + jCs3(ϕ) ,
(1)
and corresponds to the superposition of the Stokes pa-
rameters with different weights given by the coefficients
j0, j1, j2, and jC, which in the experimental geometry
applying rotation of quarter-wave plate the Stokes pa-
4
circuit configuration the measured photovoltage increases
at larger negative bias voltages and achieves maximum at
the threshold voltage, Uth = −1.3 V. Corresponding data
will be presented and discussed below. While the non-
monotonic behavior of the signal for gate voltage varia-
tion is well known for FET detectors [1, 2, 39] the signal
sign inversion upon a change of the radiation polariza-
tion, see Fig. 2(a), is generally not expected for stan-
dard Dyakonov-Shur FET detectors indicating crucial
role of the lateral superlattice in the photocurrent gen-
eration. To demonstrate that the observed effect indeed
stems from the lateral asymmetry of the periodic poten-
tial we interchanged the voltages applied to the gates.
Figure 2(b) shows the results obtained for zero gate volt-
age at the first gate and UG2 = −0.9 V at the second
one. The figure reveals that changing the sign of the lat-
eral potential asymmetry, see insets of Fig. 2(a) and (b),
results in the sign inversion of all contributions besides
the polarization independent offset. The situation holds
for almost all values of UG2, see the insets in Fig. 2(a)
and (b). Significantly, the proper choice of the relation
between amplitudes of the individual gate potentials al-
lows one to suppress completely one or the other pho-
tocurrent contribution. Figure 3(a) demonstrates that
for close values of gate voltages the circular photocurrent
vanishes (corresponding potential profile for UG1= -1.1 V
and UG2= -0.9 V is shown in the inset in Fig. 3). The
interplay of the contributions upon variation of UG1 and
for fixed UG2= -1.1 V is shown in the inset in Fig. 3(a).
It is seen that for nonzero second gate voltage the circu-
lar, jc, and linear, j2, photocurrent contributions change
their direction with increasing UG1. Moreover, the inver-
sions take place at different UG1 voltages. This fact can
be used to switch on and off the circular photocurrent
jC ∝ Pcirc contribution.
To support the conclusion that j1 and j2 photocurrent
contribution are caused by the linear polarized light com-
ponent we carried out additional measurements applying
linearly polarized light. The gate dependence of the nor-
malized photocurrent jy/I measured for samples #A and
#B for several azimuth angles α are shown in Fig. 4(a).
The inset in this figure presents the dependence of jy/I
on the electric field orientation. The polarization depen-
dence is well described by the Eq. (1) taking into account
that for linearly polarized light the last term vanishes and
the Stokes parameters are given by
s1(α) = cos 2α ,
s2(α) = sin 2α .
Here α = 2β defines the orientation of the polarization
plane and β is the angle between the initial polariza-
tion plane and the optical axis of the half-wave plate.
The magnitudes and signs of the coefficients j0, j1, and
j2 used for the fit coincide with that applied for fitting
of ϕ-dependencies obtained at the same gate voltages.
These results demonstrate that photocurrents j1 and j2
measured in set-up applying quarter-wave plate are in-
FIG. 4: (a) THz radiation induced normalized photocurrent
jy/I excited by linearly polarized THz radiation in samples
#A and #B as a function of the gate voltage UG1. The current
is shown for UG2 = 0 and several in-plane orientations of the
radiation electric field in respect to source-drain line defined
by azimuth angles α.
Inset shows dependence of jy on the
angle α obtained for UG1 = −1.08 V and UG2 = 0. Full
line shows fit to the total current calculated after Eq. (6).
Arrows indicate electric field orientation for several angles α.
(b) Photocurrent jy/I excited by linearly polarized microwave
radiation (f = 95.5 GHz) in samples #A and #B as a function
of the gate voltage UG1 (UG2 = 0). Inset shows dependence
of jy/I on the azimuth angle α obtained in sample #B for
UG1 = −1.14 V and UG2 = 0. Full line shows fit after
jy ∝ cos2(α + θ) with the phase angle θ.
fine the linear polarization of radiation in the (xy) and
rotated by 45◦ coordinate frames, and s3 describes the
degree of circular polarization or helicity of radiation.
Consequently individual photocurrent contributions in
Eq. (1) are induced by unpolarized, linearly or circularly
polarized light components. While the polarization de-
pendence given by Eq. (1) has been detected for arbitrary
relations between voltages applied to the first and second
gates, the magnitude and even the sign of the individual
contributions can be controlled by the gate voltages. The
inset in Fig. 2(a) shows a gate dependence of the polar-
ization dependent contributions to the total photocur-
rent [38]. The dependence on the gate voltage UG1 is
obtained for zero biased second gate. Photocurrent mea-
sured in the close circuit configuration with RL ≪ Rs
shows a maximum amplitude for UG1 = −1.1 V. For open
deed controlled by the degree of linear polarization of
elliptically polarized radiation.
The polarization sensitive photocurrent has been ob-
served in all studied devices of similar design and ar-
bitrary relation between second and first gate poten-
tials. The photocurrent can always be well described
by Eq. (1). Figure 3(b) summarizes the data on the he-
licity driven photocurrent jC/I detected in three HEMT
structures upon change of UG1 and for UG2 = 0.
In
all samples we detected similar dependencies of the pho-
tocurrent characterized by close maximum positions but
different signal magnitudes. The data of Fig. 3(b) as
well as circles in its inset are obtained in the close cir-
cuit configuration applying 50 Ω load resistance. The
non-monotonic behavior of the photosignal measured in
this geometry is caused by the interplay of the potential
asymmetry, increasing with raising second gate voltage,
and raising of the sample resistance for large gate volt-
ages. For the open circuit geometry (signal is fed to the
high input impedance of lock-in amplifier) the maximum
of the signal is detected for gate voltages being equal
to the threshold voltage, Uth, see squares in the inset
in Fig. 3(b). Following Ref. [9] we estimate from the
voltages measured in open circuit geometry the voltage
responsivities for the signals corresponding to the pho-
tocurrents j2 and jC as Rv = Us/P × S/St ≈ 0.3 V/W
and 0.15 V/W, respectively. Here P the total power of
the source at the detector plane, S radiation beam spot
area, and St = 20 × 20 µm2 transistor area. The voltage
responsivities, being rather low as compared to that typi-
cally obtained for plasmonic FET detectors, indicates the
necessity of further optimization of the structure design.
Finally, we note that measurements applying microwave
radiation show that for lower frequencies the polariza-
tion behavior changes qualitatively. Instead of the sign-
alternating dependencies discussed above the signal now
varies after jy ∝ cos2(α + θ), see inset in Fig. 4(b). This
observation is in a good agreement with the Dyakonov-
Shur theory [12] and was reported for many conventional
plasmonic FET detectors, see e.g. [1, 2]. The gate volt-
age dependence of the response shown in Fig. 4 also re-
produces well the results previously obtained for similar
structures [9, 40]. Even the fact that the maximum of
the signal in various structures has been obtained for dif-
ferent directions of the electric field vector in respect to
y-direction (source-drain) has already been reported for
these transistors and attributed to the antenna coupling
of MW radiation to transistor, see Ref. [40].
IV. DISCUSSION
The observation of the circular photocurrent and the
sign-alternating linear photocurrent j2 reveals that a mi-
croscopic process actuating these photocurrents goes be-
yond the plasmonic Dyakonov-Shur model typically ap-
5
plied to discuss operation of FETs THz detectors.
In-
deed, as addressed above, the latter implies an oscillating
electric field along source-drain direction (y-direction)
yielding sign conserving variation upon rotation of po-
larization plane, jy ∝ cos2 α [41]. As recently shown
in Ref. [42, 43], the Dyakonov-Shur model in fact may
result in the circular photocurrent but only due to in-
terference effects of two different channels and two inter-
acting antennas in small size special design FETs - the
model which can hardly be applied to the large DGG
samples used in our experiments. At the same time,
the observed polarization behavior is characteristic for
the electronic ratchet effects excited in asymmetric pe-
riodic structures [24 -- 27] and linear/circular plasmonic
ratchet effects [22, 28]. The ratchet currents arise due
to the phase shift between the periodic potential and
the periodic light electric field resulting from near field
diffraction in a system with broken symmetry. Micro-
scopic theory developed in Ref. [26] shows that the helic-
ity dependent photocurrent appear because the carriers
in the laterally modulated quantum wells move in two
directions and are subjected to the action of the two-
component electric field. Symmetry analysis of the pho-
tocurrent shows that in our DDG structures described
by C1 point group symmetry [44] it varies with radia-
tion polarization after Eq. (1), being in agreement with
experimental observation shown in Figs. 2, 3 and 4(a).
Moreover, as the ratchet photocurrents are proportional
to the degree of the in-plane asymmetry, they reverse
the sign upon inversion of static potential asymmetry.
Exactly this behavior has been observed in experiment,
see Fig. 2 (a) and (b). The proportionality to the de-
gree of lateral asymmetry also explain the increase of the
signal with raising voltage applied to one gate at con-
stant voltage by the other. The interplay of the degree
of lateral asymmetry and periodic modulation of THz
electric field results in the complex gate-voltage depen-
dence, in particular, for UG1 ≈ UG2. As the different
individual contributions to the total current effect might
imply different microscopic mechanisms of the photocur-
rent formation, their behavior upon change of external
parameters can distinct from each other. This would
result in a sign-alternating gate-voltage behavior, in par-
ticular for the range of comparable UG1 and UG2, like it
is observed in experiment, see Fig. 2 (c). While all quali-
tative features of the observed phenomena can be rather
good described in terms of ratchet effects we would like
to address another possible effect, which might trigger
the helicity-driven photocurrent. It could be the differ-
ential plasmonic drag effect in the two-dimensional struc-
ture with an asymmetric double-grating gate considered
in Refs. [22, 47]. As shown in Ref. [22] for a periodic
AlAs/InGaAs/InAlAs/InP structure and linearly polar-
ized THz radiation, photon drag effect can be comparable
in strength with the plasmonic ratchet effect at THz fre-
quencies. As the circular photon drag effect has been
observed in different low dimensional materials [34, 48]
we can expect that modification of the theory developed
in [22] can also yield helicity driven plasmonic drag cur-
rent compatible with the ratchet one.
Finally, we note that the ratchet effects (either elec-
tronic or plasmonic) can be greatly increased due to
the resonant enhancement of the near-field in two-
dimensional electron system at the plasmon resonance
excitation as it was shown for the plasmonic ratchet in
Refs. [23, 28]. The resonant plasmon condition ωτ > 1,
see Ref. [12] can be well satisfied in our structure (ωτ = 4
at 2.54 THz). As shown in Ref. [23], the fundamental
plasmon resonance is excited in a similar structure at fre-
quency around 2 THz. Therefore, the plasmon resonance
excitation can contribute to the observed ratchet effects
independently of particular microscopic mechanisms of
the ratchet photocurrent formation. The measurements
in a broader THz frequency range could elucidate the
role of the plasmonic resonance excitation in the ratchet
photocurrent enhancement.
V. SUMMARY
To summarize, our measurements demonstrate that
dual-grating-gate InAlAs/InGaAs/InAlAs/InP excited
by terahertz radiation can yield a helicity sensitive pho-
tocurrent response at THz frequencies. We show, that
HEMTs with asymmetric lateral superlattice of gate fin-
gers with unequal widths and spacing can be applied
for generation of a photocurrent defined by linearly and
circularly radiation polarization components. Moreover,
one can obtain photoresponse being proportional to one
of the Stokes parameters simply by variation of voltages
applied to the individual gates. The photocurrent for-
mations can be well described in terms of ratchet effects
excited by terahertz radiation. By that the lateral grat-
ing induces a periodical lateral potential acting on the 2D
electron gas in QW. This grating also modulates the inci-
dent radiation in the near field and hence in the plane of
the 2DES, resulting in circular, linear and polarization-
independent ratchet effects. While the responsivity of
the polarization dependent response is lower than that
reported for FET transistors it can be substantially im-
proved by optimization of the structure design leading
the resonant enhancement of the ratchet effects the plas-
mon resonance excitation.
We thank V. Popov for helpful discussions. The fi-
nancial support from the DFG (SFB 689) is gratefully
acknowledged.
6
edited by D. Saeedkia (Woodhead Publishing, Waterloo,
Canada, 2013), pp. 121-155.
[2] W. Knap, , S. Rumyantsev, M. S Pea Vitiello, D. Co-
quillat, S. Blin, N. Dyakonova, M. Shur, F. Teppe, A.
Tredicucci, T. Nagatsuma, Nanotechnology 24, 214002
(2013).
[3] S. Boppel, A. Lisauskas, A. Max, V. Krozer, and H. G.
Roskos, Opt. Lett. 37, 536 (2012).
[4] V. M. Muravev and I. V. Kukushkin, Appl. Phys. Lett.
100, 082102 (2012).
[5] M. Tonouchi, Nature Photon. 1, 97 (2007).
[6] F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F.
Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W.
Knap, Opt. Express 19, 7827 (2011).
[7] G. C. Dyer, S. Preu, G. R. Aizin, J. Mikalopas, A. D.
Grine, J. L. Reno, J. M. Hensley, N. Q. Vinh, A. C.
Gossard, M. S. Sherwin, S. J. Allen, and E. A. Shaner,
Appl. Phys. Lett. 100, 083506 (2012).
[8] S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. C. Gos-
sard, and H. B. Weber, Opt. Express 21, 17941 (2013).
[9] T. Watanabe, S. A. Boubanga-Tombet, Y. Tanimoto, D.
Fateev, V. Popov, D. Coquillat, W. Knap, Y. M. Meziani,
Y. Wang, H. Minamide, H. Ito, and T. Otsuji, IEEE
Sensors Journal 13, 89 (2013).
[10] D. B. But, C. Drexler, M. V. Sakhno, N. Dyakonova , O.
Drachenko, F. F. Sizov, A. Gutin, S. D. Ganichev, W.
Knap, J. Appl. Phys. 115, 164514 (2014).
[11] W. Knap, D. B. But, N. Dyakonova, D. Coquillat, A.
Gutin, O. Klimenko, S. Blin, F. Teppe, M.S. Shur, T.
Nagatsuma, S.D. Ganichev, and T. Otsuji, Recent Re-
sults on Broadband Nanotransistor Based THz Detectors
in NATO Science for Peace and Security Series B, Physics
and Biophysics: THz and Security Applications, edited
by C. Corsi, F. Sizov, (Springer, Dordrecht, Netherlands,
2014) pp.189 - 210.
[12] M. Dyakonov and M. S. Shur, IEEE-Trans-ED 43(3), 380
(1996).
[13] W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur,
C. A. Saylor and L. C. Brunel, Appl. Phys. Lett. 80, 3433
(2002).
[14] W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-
Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif
Khan, C. A. Saylor, and L. C. Brunel, J. Appl. Phys. 91,
9346 (2002).
[15] T. Otsuji, M. Hanabe, T. Nishimura, and E. Sano, Opt.
Exp. 14, 4815 (2006).
[16] S. Sassine, Yu. Krupko, J.-C. Portal, Z. D. Kvon, R.
Murali, K. P. Martin, G. Hill, and A. D. Wieck, Phys.
Rev. B 78, 045431 (2008).
[17] D. Coquillat , S. Nadar, F. Teppe, N. Dyakonova, S.
Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji,
Y. M. Meziani, G. M. Tsymbalov, and V. V. Popov, Opt.
Exp. 18, 6024 (2010).
[18] V. V. Popov, J. Infr. Millim. THz Waves 32, 1178 (2011).
[19] G. C. Dyer, G. R. Aizin, J. L. Reno, E. A. Shaner, and
S. J. Allen, IEEE J. Sel. Topics Quantum Electron. 17,
85 (2011).
[20] V. V. Popov, D. V. Fateev, T. Otsuji, Y. M. Meziani, D.
Coquillat, and W. Knap, Appl. Phys. Lett. 99, 243504
(2011).
[21] E. S. Kannan, I. Bisotto, J.-C. Portal, T. J. Beck, and L.
Jalabert, Appl. Phys. Lett. 101, 143504 (2012).
[1] W. Knap and M. Dyakonov, Plasma wave THz detec-
tors and emitters in Handbook of Terahertz Technology
[22] V. V. Popov, Appl. Phys. Lett. 102, 253504 (2013).
[23] V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D.
Coquillat, and W. Knap, Appl. Phys. Lett. 99, 243504
(2011).
[24] P. Olbrich, E.L. Ivchenko, T. Feil, R. Ravash, S.D.
Danilov, J.Allerdings, D. Weiss, and S. D. Ganichev,
Phys. Rev. Lett 103, 090603 (2009).
[25] E. L. Ivchenko and S. D. Ganichev, JETP Lett. 93, 752
(2011).
[26] P. Olbrich, J. Karch, E. L. Ivchenko, J. Kamann, B.
Maerz, M. Fehrenbacher, D. Weiss, and S. D. Ganichev,
Phys. Rev. B 83, 165320 (2011).
[27] A. V. Nalitov, L. E. Golub, E. L. Ivchenko, Phys. Rev.
B 86, 115301 (2012).
[28] I. V. Rozhansky, V. Yu. Kachorovskii, and M. S. Shur,
Phys. Rev. Lett. 114, 246601 (2015).
[29] B. E. A. Saleh, M. C. Teich, Fundamentals of Photonics
(John Wiley & Sons, New York, 2003).
[30] S. N. Danilov, B. Wittmann, P. Olbrich, W. Eder, W.
Prettl, L. E. Golub, E. V. Beregulin, Z. D. Kvon, N. N.
Mikhailov, S. A. Dvoretsky, V. A. Shalygin, N. Q. Vinh,
A. F. G. van der Meer, B. Murdin, and S. D. Ganichev,
J. Appl. Physics 105, 013106 (2009).
[31] S. D. Ganichev, J. Kiermaier, W. Weber, S. N. Danilov,
D. Schuh, Ch. Gerl, W. Wegscheider, D. Bougeard, G.
Abstreiter, and W. Prettl, Appl. Phys. Lett. 91, 091101
(2007).
[32] S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov,
D. Schuh, W. Wegscheider, Ch. Gerl, D. Bougeard, G.
Abstreiter and W. Prettl, J. Appl. Physics 103, 114504
(2008).
[33] S.D. Ganichev, S.A. Tarasenko, V.V. Bel'kov, P. Olbrich,
W. Eder,D.R. Yakovlev, V. Kolkovsky, W. Zaleszczyk,
G. Karczewski, T. Wojtowicz, and D. Weiss, Phys. Rev.
Lett. 102, 156602 (2009).
[34] J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth,
C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M.
Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss,
J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D.
Ganichev, Phys. Rev. Lett. 105, 227402 (2010).
[35] J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher,
M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L.
Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova,
S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S. D.
Ganichev, Phys. Rev. Lett. 107, 276601 (2011).
[36] M.M. Glazov and S.D. Ganichev, Physics Reports 535,
101 (2014).
[37] S. D. Ganichev and W. Prettl, Intense Terahertz Exci-
tation of Semiconductors (Oxford University Press, Ox-
ford, 2006).
[38] While being detected in all reported measurements a po-
larization independent offset given by the coefficient j0
will not be discussed in details. Instead, hereafter we fo-
cus on helicity sensitive photocurrent, jC, and currents
7
driven by linearly polarized light, j1 and j2.
[39] M. Sakowicz, M. B. Lifshits, O. A. Klimenko, F. Schuster,
D. Coquillat, F. Teppe, and W. Knap, J. Appl. Phys.
110, 054512 (2011).
[40] D. Coquillat, V. Nodjiadjim, A. Konczykowska, M. Riet,
N. Dyakonova, C. Consejo, F. Teppe, J. Godin, W. Knap,
Didgest of Int. Conf. on Infrared, Millimeter, and Tera-
hertz Waves, Tucson, USA, (2014).
[41] Note that signal variation with polarization is, apart the
offset, identical with that of s1, therefore this polarization
dependence can also be used to describe the j1-related
photocurrent behavior.
[42] C. Drexler, N. Dyakonova, P. Olbrich, J. Karch, M.
Schafberger, K. Karpierz, Yu. Mityagin, M. B. Lifshits,
F. Teppe, O. Klimenko, Y. M. Meziani, W. Knap, and S.
D. Ganichev, J. Appl. Physics 111, 124504 (2012).
[43] K. S. Romanov and M. I. Dyakonov, Appl. Phys. Lett.
102, 153502 (2013).
[44] All previous works aimed to the radiation induced ratchet
effects discuss the case of unconnected parallel metal
stripes: a system belonging to Cs point group symme-
try consisting of the identity element and the reflection
in the plane perpendicular to the stripes [22, 24 -- 28]. For
this symmetry circular photocurrent jC and the pho-
tocurrent j2 can be generated along stripes only whereas
polarization independent offset and j0 and photocurrent
j1 are allowed in the perpendicular to that direction
(source-drain). Design of our DDG structures with in-
terconnected metal stripes in each of gates excludes re-
flection plane reducing the point group symmetry to C1.
As a result the symmetry does not imply any restrictions
and the photocurrent includes all four individual con-
tributions (j0, j1, j2 and jC ) which are allowed in any
in-plain direction. More details on the symmetry analy-
sis of photocurrents in quantum wells of C1 symmetry
can be found in [45, 46].
[45] B. Wittmann,
S.N. Danilov,
E.G. Novik,
V.V.
Bel'kov,
H. Buhmann,
S.A. Tarasenko,
C. Brune, L.W. Molenkamp, E.L.
Ivchenko, Z.D.
Kvon, N.N. Mikhailov, S.A. Dvoretsky, N. Q. Vinh,
A. F. G. van der Meer, B. Murdin, and S.D. Ganichev
Semicond. Sci. and Technology 25, 095005 (2010).
[46] V.V. Bel'kov, and S.D. Ganichev, Semicond. Sci. Tech-
nol. 23, 114003 (2008).
[47] V.V. Popov, D.V. Fateev, E.L. Ivchenko, and S.D.
Ganichev, Phys. Rev. B 91, 235436 (2015).
[48] V.A. Shalygin, H. Diehl, Ch. Hoffmann, S.N. Danilov,
T. Herrle, S.A. Tarasenko, D. Schuh, Ch. Gerl, W.
Wegscheider, W. Prettl and S.D. Ganichev, JETP Lett.
84, 570 (2006).
|
1908.07252 | 1 | 1908 | 2019-08-20T09:48:44 | Thermal generation of shift electric current | [
"cond-mat.mes-hall"
] | It is shown that the dissipation of energy in an electron gas confined in a quantum well made of non-centrosymmetric crystal leads to a direct electric current. The current originates from the real-space shift of the wavepackets of Bloch electrons at the electron scattering by phonons, which tends to restore thermal equilibrium between the electron and phonon subsystems. We develop a microscopic theory of such a phonogalvanic effect for narrow band gap zinc-blende quantum wells. | cond-mat.mes-hall | cond-mat | a
Thermal generation of shift electric current
G. V. Budkin and S. A. Tarasenko
Ioffe Institute, 194021 St. Petersburg, Russia
It is shown that the dissipation of energy in an electron gas confined in a quantum
well made of non-centrosymmetric crystal leads to a direct electric current. The
current originates from the real-space shift of the wavepackets of Bloch electrons
at the electron scattering by phonons, which tends to restore thermal equilibrium
between the electron and phonon subsystems. We develop a microscopic theory of
such a phonogalvanic effect for narrow band gap zinc-blende quantum wells.
I.
INTRODUCTION
The currents of charge carriers, electrons or holes, in solid-state systems are commonly
generated by gradients of electric or chemical potentials, temperature, etc. In structures
of low spatial symmetry, direct currents can also emerge when the system is driven out of
thermal equilibrium by an undirected force with zero average driving [1, 2]. Well known
examples are ratchet and photogalvanic effects [3 -- 11] and the spin-galvanic effect [12 -- 14],
when non-equilibrium spin polarization drives an electric current in gyrotropic structures.
Here, we study the effect of generating direct electric current from the kinetic energy of
hot electrons. We show that the breaking of thermal equilibrium between the electron and
phonon subsystems in semiconductor structure of sufficiently low symmetry is enough to
drive an electric current. Microscopically, the current originates from the shift of Bloch elec-
trons in real space at the emission or absorption of phonons, which tend to restore thermal
equilibrium in the system. While the spin-dependent shift of electrons at momentum scatter-
ing (side jump contribution) has been intensively studied, particularly, in the physics of the
anomalous and spin Hall effects [15 -- 20], less is known about the charge shift which occurs
at inelastic scattering [21, 22]. Here, we study this effect for narrow gap two-dimensional
(2D) systems made of zinc-blend-type semiconductors, such as HgTe/CdHgTe quantum wells
(QWs), which naturally lack the center of space inversion. These 2D structures, except for
QWs grown along the high-symmetry axes [001] and [111], are polar in the plane and sup-
port the generation of electric current in the presence of energy transfer between the electron
subsystem and the crystal lattice. In analogy to the (linear) photogalvanic effect [2, 23],
where the absorption of photons gives rise to a shift electric current, the effect we study can
be named phonogalvanic.
2
II. MICROSCOPIC PICTURE
We consider a two-dimensional electron gas in a QW structure, see Fig. 1. The electron
gas is initially heated. Frequent electron-electron collisions thermalize the electrons and
establish the Fermi-Dirac distribution with the effective electron temperature Te that is
above the lattice temperature T . The electron gas is being cooled down by emitting phonons
which transfer the energy from the QW region. As will be calculated below, the processes of
phonon emission/absorption in zinc-blend QWs are accompanied by the in-plane shift of the
Bloch electrons involved in the quantum transitions. The shifts have a preferable direction,
except for the QWs grown along the high-symmetry axes [001] and [111], although the
phonons can be emitted in all directions. Therefore, the energy relaxation of electrons gives
rise to a direct electric current j. The current is generated until the electron temperate
reaches the lattice temperature.
FIG. 1. Shift mechanism of phonogalvanic effect in quantum wells. Emission of phonons by hot
electrons is accompanied by the electron shift in the QW plane, which leads to a net electric current.
At thermodynamic equilibrium, the net current vanishes because the electron shifts at
the phonon emission and absorption are opposite and compensate each other. If, however,
the electron temperature is higher (or lower) than the lattice temperature, the processes of
phonon emission (absorption) dominate, which leads to an electric current.
3
III. THEORY
Now we develop a microscopic theory of the phonogalvanic effect. We present a brief
derivation of the electron shift in 2D systems, describe the electron states in narrow gap QWs
and interaction with acoustical phonons in zinc-blende structures, calculate the electron shift
and the density of electric current, and discuss the results.
A. Electron shift in 2D structures
The Bloch states of electrons with the in-plane wave vectors k and the spin index s in a
two-dimensional crystalline structure are described by the functions
ψks = Uks exp(ik · ρ) ,
(1)
where Uks contains the Bloch amplitude and the envelope function along the quantization
axis z and ρ = (x, y) is the in-plane coordinate.
To calculate the electron displacement at the quantum transition between the initial state
ν = (k, s) and the final state ν(cid:48) = (k(cid:48), s(cid:48)) we consider that these states are described by
narrow wave packets of the form
Ψν =
c(ν)
ks ψks
(2)
(cid:88)
ks
centered at the wave vectors k and k(cid:48), respectively. The displacement in the real space is
determined by the difference of the position mean values in the initial and final states. For
the wave packets (2) constructed from the Bloch functions (1), the displacement is given by
(cid:20)
(cid:20)
(cid:88)
−(cid:88)
ks
Rν(cid:48)ν =
(cid:21)
ic(ν(cid:48))∗
ks
d
dk
ks + c(ν(cid:48))
c(ν(cid:48))
ks 2Ωks
(cid:21)
ic(ν)∗
ks
d
dk
ks + c(ν)
c(ν)
ks 2Ωks
where
(cid:90)
ks
Ωks = i
U∗
ks
d
dk
Uksdr ,
,
(3)
(4)
also called the Berry connection in the reciprocal space. Taking into account that the wave
packets are narrow, the displacement can be expressed in terms of the gradient of the phase
Φk(cid:48)s,ks which the wave function acquires at the transition,
Rν(cid:48)ν = − (∇k(cid:48) + ∇k) Φk(cid:48)s(cid:48),ks + Ωk(cid:48)s(cid:48) − Ωks ,
(5)
4
or, equivalently, in terms of the transition matrix elements Vk(cid:48)s(cid:48),ks,
(∇k(cid:48) + ∇k) Φk(cid:48)s(cid:48),ks =
k(cid:48)s(cid:48),ks (∇k(cid:48) + ∇k) Vk(cid:48)s(cid:48),ks
Vk(cid:48)s(cid:48),ks2
Im(cid:2)V ∗
(cid:3)
.
Equation (5) for the displacement of Bloch electrons at quantum transitions in crystals
was obtained by Luttinger [15] and Belinicher, Ivchenko, and Sturman [21]. Note that
the displacement (5) does not dependent on the choice of the phases of the Uks and Uk(cid:48)s(cid:48)
functions while the individual contributions are non-invariant.
B. Electron states in narrow gap QWs
To be specific we consider the class of (0lh)-oriented QWs, where l and h are integer
numbers, which includes (001)-, (011)-, and (013)-grown structures. The ground electron
e1, s(cid:105) and heavy-hole h1, s(cid:105) subbands at k = 0 are described in the 6-band k·p model by
the wave functions
e1, +(cid:105) = f1(z)Γ6, +1/2(cid:105) + f4(z)Γ8, +1/2(cid:105) ,
h1, +(cid:105) = f3(z)Γ8, +3/2(cid:105) ,
e1,−(cid:105) = f1(z)Γ6,−1/2(cid:105) + f4(z)Γ8,−1/2(cid:105) ,
h1,−(cid:105) = f3(z)Γ8,−3/2(cid:105) ,
(6)
where fj(z) are the envelope functions, Γ6, m(cid:105) (m = ±1/2) and Γ8, m(cid:105) (m = ±1/2,±3/2)
are the Bloch amplitude of the Γ6 and Γ8 states in the center of the Brillouin zone, re-
spectively. At k (cid:54)= 0, the states are mixed. The mixing in narrow gap QWs, such as
HgTe/CdHgTe, is described by the k-linear Bernevig-Hughes-Zhang Hamiltonian [24]
H =
,
δ
iAk+
−iAk− −δ
0
0
0
0
0
0
0
0
δ −iAk−
iAk+ −δ
(7)
5
where 2δ is the energy gap between the e1 and hh1 subbands and A is a real parameter
determining the dispersion. Admixture of excited electron and hole subbands and zero-field
spin splitting are neglected in this model Hamiltonian [25, 26].
In QWs with symmetric
confinement potential, the functions f1(z) and f3(z) are even while f4(z) is odd with respect
to the QW center.
Solution of the Schrodinger equation with the Hamiltonian (7) yields the dispersion of
the conduction subband
and the wave functions
Uks =
√
δ2 + A2k2
εk =
where s = ±1, ϕ = arctan(ky/kx) is the polar angle of the wave vector k, and
1√
2
(cid:0)ake1, s(cid:105) − ise−isϕbkh1, s(cid:105)(cid:1) ,
(cid:114)εk + δ
(cid:114) εk − δ
.
εk
ak =
, bk =
εk
For the states in the valence subband in the electron representation one obtains
and
k = −
ε(v)
√
δ2 + A2k2
(cid:0)bke1, s(cid:105) + ise−isϕakh1, s(cid:105)(cid:1)
U (v)
ks =
1√
2
with the coefficients ak and bk given by Eqs. (10).
(8)
(9)
(10)
(11)
(12)
C. Electron-phonon interaction
Consider now the deformation interaction of electrons with acoustic phonons (DA mech-
anism) [27]. The matrix elements of the deformation interaction within the Γ6 and Γ8 bands
in zinc-blend-type crystals can be presented in the form
(cid:104)Γ6, mV Γ6, m(cid:48)(cid:105) = Ξc Tr uαβ δmm(cid:48) ,
(cid:104)Γ8, mV Γ8, m(cid:48)(cid:105) = Ξv Tr uαβ δmm(cid:48) ,
(13)
where Ξc and Ξv are the deformation-potential constants and uαβ are the strain tensor
components. Here, we use the simplified Hamiltonian for the Γ8 band with the single
deformation-potential constant Ξv. Ξv = a + (5/4)b in the Bir-Pikus notation [28], the
other terms are neglected.
6
Importantly, in zinc-blend crystals the strain also mixes the states of the Γ6 and Γ8
bands [29]. Such an interband mixing in the coordinated frame x (cid:107) [100], y (cid:107) [0h¯l], z (cid:107) [0lh],
relevant for (0lh)-oriented QWs, is described by the matrix elements [30]
(cid:20)
(cid:104)Γ8,±3/2V Γ6,±1/2(cid:105) =
= ∓Ξcv√
2
(uyz ∓ iuxz) cos 2θ +
3(cid:104)Γ8,±1/2V Γ6,∓1/2(cid:105)
(cid:18) uzz − uyy
(cid:19)
± iuxy
sin 2θ
,
2
(cid:21)
(cid:104)Γ8,±1/2V Γ6,±1/2(cid:105) =
[uxy cos 2θ + uxz sin 2θ] ,
(14)
√
(cid:114)2
3
where θ is the angle between the [001] and [0lh] axes and Ξcv is the interband deformation-
potential constant [29]. Note that Ξcv vanishes in centrosymmetric crystals.
The matrix elements of the scattering of electrons confined in the QW by bulk acoustic
phonons can be readily calculated using the deformation Hamiltonians (13,14) and the wave
functions (9). Since Ξc,Ξv > Ξcv, the scattering occurs mainly with the conservation of
the spin index s and by longitudinal (LA) phonons. Further, the out-of-plane component
qz of the wave vector q of the phonons involved is typically much larger than the in-plane
component q(cid:107) = k − k(cid:48). In these approximations, the matrix elements of the scattering
assisted by emission or absorption of LA phonons assume the form
k(cid:48)s,ks = ∓i
V (±)
q2
z
2q
(ΞcZ11 + ΞvZ44)ak(cid:48)ak + ΞvZ33
(cid:35)
× bk(cid:48)bkeis(ϕ(cid:48)−ϕ) − i
ΞcvZ13(bk(cid:48)akeisϕ(cid:48) − ak(cid:48)bke−isϕ)
δk(cid:48),k∓q(cid:107),
(15)
q = Nq + (1 ± 1)/2, Nq is the phonon occupation number, ρ is
where q(cid:107) = ±(k − k(cid:48)), N (±)
the crystal density, ωq = csq is the phonon frequency, cs is the speed of longitudinal sound,
and Zij(qz) =(cid:82) fi(z)fj(z)eiqzzdz.
D. Electric current
(cid:115)N (±)
q
(cid:34)
2ρωq
√
sin 2θ
2
2
The electric current caused by the shift of electrons at quantum transitions is calculated
after the equation
j = e
(cid:88)
ks,k(cid:48)s(cid:48)
Wk(cid:48)s(cid:48),ksRk(cid:48)s(cid:48),ks ,
(16)
where
(cid:88)
q,±
Wν(cid:48),ν =
2π
V (±)
ν(cid:48),ν 2fν(1 − fν(cid:48))δ(εν(cid:48) − εν ± ωq)
7
(17)
is scattering probability, Rν(cid:48)ν is the shift given by (5), and fν is the electron distribution
function.
We assume that electron thermalization governed by electron-electron collisions is estab-
lished at a time scale which is much shorter than the energy relaxation time determined by in-
elastic electron-phonon scattering. As a result, the electron distribution is quasi-equilibrium
and can be described by the Fermi-Dirac function fν = {exp[(εν − µ)/kBTe] + 1}−1, where
Te is the effective electron temperature and µ is the chemical potential. The phonon dis-
tribution is described by the Bose-Einstein function Nq = [exp(ωq/kBT ) − 1]−1 with the
lattice temperature T . At ∆T = Te − T (cid:28) T , the difference between the rates of photon
emission and absorption is given by
(cid:2)fν(cid:48)(1 − fν)N +
(cid:3)
q − fν(1 − fν(cid:48))N−
q
εν(cid:48) =εν +ωq
≈ fν(cid:48)(1 − fν)
∆T
T
.
(18)
To proceed further, we calculate the current contributions j(1) and j(2) related to the
phase gradients and the Berry connections in Eq. (5), respectively, separately. However,
we stress that only the sum of them, j = j(1) + j(2), is invariant with respect to the wave
function choice and is a physical observable.
The contribution to the current stemming from the phase gradients is determined by the
vectors
Λ(±) =
k(cid:48)s(cid:48),ks(∇k(cid:48) + ∇k)V (±)
V (±)∗
k(cid:48)s(cid:48),ks
,
(19)
where the angle brackets denote averaging over the directions of the wave vectors k and k(cid:48).
For the matrix elements (15), they have the form
[ΞcZ11(qz) + ΞvZ44(qz)]×
x sin 2θ
2
√
32
Λ(±) =
(cid:20)
ak(cid:48)akak(cid:48)
(cid:18) d
dk
(cid:20)
− ΞvZ33(qz)
bk(cid:48)bkbk(cid:48)
q2
z Z13(qz)ΞcvN (±)
q
(cid:19)
ρωq
bk − ak(cid:48)akak
(cid:18) d
dk(cid:48) +
dk(cid:48) − bk(cid:48)bk(cid:48)ak
dak(cid:48)
(cid:19)
(cid:18) d
1
k(cid:48)
dk
1
k
− bk(cid:48)bkbk
+
dak
dk
bk(cid:48) − ak(cid:48)bkak(cid:48)
dak
dk
(cid:19)
+ akbk(cid:48)ak
(cid:18) d
+
1
k
bk + bkbkak(cid:48)
dk(cid:48) +
(cid:21)
(cid:21)(cid:41)
bk(cid:48)
,
(20)
(cid:19)
dak(cid:48)
dk(cid:48)
1
k(cid:48)
(cid:69)
(cid:68)
(cid:40)
where x is the unit vector along the x axis. This results in the following contribution to the
8
electric current
j(1)
x =
e sin 2θ
√
2π2
64
Ξcv∆T
ρA3d3
(cid:20)
+∞(cid:90)
δ
(Ξcζ1 + Ξvζ4) a4
k + Ξvζ3
(cid:18) a4
k − b4
kb2
k + 2a2
2
k
(cid:19)(cid:21) fk(1 − fk)
T
dεk ,
(21)
where d is the QW width, ζj are dimensionless parameters determined by the functions of
size quantization,
ζj = d3
+∞(cid:90)
dqzq2
z Z13(qz)Zjj(qz) = 2πd3
+∞(cid:90)
−∞
−∞
d f1(z)f3(z)
dz
d f 2
j (z)
dz
dz ,
(22)
and it is assumed that the energy of phonons involved is much smaller than the mean electron
energy.
FIG. 2. Distribution of the Berry connection Ωks in the k space in the spin subbands s = " ± "
plotted after Eq. (23). Red and blue dotted circles show isoenergetic curves. Black arrows sketch
the electron transitions with the emission of phonons. Asymmetry of the electron transitions in
the spin and momentum spaces (shown by black arrows of different thickness) at energy relaxation
leads to a variation of the mean value of Ωks, i.e., to the contribution j(2) to the shift current.
The second contribution to the current is determined by the Berry connection which, for
the wave functions (9), has the form
Ωks =
z × k ,
sb2
k
2k
(23)
Ωk'--Ωk-Ωk'+-Ωk+s=+s=-kxkyΩk+Ωk'+Ωk-Ωk'-εkεk'εkεk' 9
where z and k are the unit vectors along z and k, respectively. The Berry connection lies
in the QW plane and points in the direction perpendicular to k. Its direction depends on
the spin index s and its amplitude is proportional to b2
k/k. The distribution of the Berry
connection in the k space for the both spin subbands is shown in Fig. 2. Black arrows in the
same figure sketch the electron transitions with the initial k and final k(cid:48) wave vectors with
the emission of phonons. Owing to the term ∝ Ξcv, the rate of such transitions is asymmetric
in the k space, which is illustrated by the arrows of different thickness. Importantly, the
sign of the asymmetry also depends on the spin index s. Therefore, the value of Ωk(cid:48)s − Ωks
summed up over the initial and final wave vectors is the same for the spin subbands and
contributes to the shift current. Straightforward calculations yields the Berry connection
contribution to the current
j(2)
x =
e sin 2θ
√
2π2
64
Ξcv∆T
ρA3d3
(cid:20)
+∞(cid:90)
δ
(Ξcζ1 + Ξvζ4)
(cid:18)a4
k − 2a2
k − b4
kb2
2
k
(cid:19)
− Ξvζ3b4
k
(cid:21) fk(1 − fk)
T
dεk .
(24)
Finally, summing up the partial contributions (21) and (24) we obtain the shift electric
current caused by the energy relaxation of electrons in the conduction subband
jx =
e sin 2θ
√
2π2
32
Ξcv∆T
ρA3d3
(cid:20)
+∞(cid:90)
δ
(cid:18)
(cid:19)
δ
εk
(cid:19)(cid:21) δ
(cid:18)
2 − δ
εk
(Ξcζ1 + Ξvζ4)
2 +
+ Ξvζ3
fk(1 − fk)
εk
T
dεk .
(25)
The shift current emerges also in p-type QWs at energy relaxation of holes. Similar
calculations carried out for the case when the chemical potential lies in the valence subband
give also Eq. (25) where the integral is taken from −∞ to −δ. Equation (25) is the main
result of this paper. Below, we discuss it and analyze for some particular cases.
IV. DISCUSSION
The shift current depends on the band structure parameters, the QW crystallographic
orientation, and the carrier distribution function. Its dependence on the QW orientation is
given by sin 2θ. The case of θ = πn/2 with integer n, when the current vanishes, corresponds
to {001}-grown QWs. Such structures have high symmetry described by the D2d or C2v point
groups depending on whether the confinement potential is symmetric or asymmetric. The
structures contain two mirror planes orthogonal to each other and to the QW plane, which
10
forbids the generation of an in-plane electric current by a scalar perturbation of the system,
such as breaking the thermal equilibrium between electrons and phonons. At θ (cid:54)= πn/2, the
QW structures have lower symmetry (our model Hamiltonian corresponds to the Cs point
group, the actual symmetry can be even lower). They belong to the class of pyroelectric
structures with the in-plane component of the polar vector, and the symmetry allows the
current generation.
The integral in Eqs. (25) can be calculated analytically in the case of low temperature
and degenerated electron gas when fk(1 − fk)/T ≈ δ(εk − εF ), where εF is the Fermi level
measured from the center of the band gap. Then, the expression for the current assumes
the form
jx =
e sin 2θ
√
2π2
32
Ξcv∆T
ρA3d3
δ
ε2
F
[(Ξcζ1 + Ξvζ4)(2εF + δ) + Ξvζ3(2εF − δ)] Θ(εF − δ) ,
(26)
where Θ is the Heaviside step function. Equation (26) is valid for both n-type and p-type
structures.
A prominent example of narrow gap QWs with the zinc-blend lattice is HgTe/CdHgTe
structures. Therefore, we make quantitative calculations of the shift current for the pa-
rameters relevant to HgTe [31]: the crystal density ρ = 8 g/cm3, the deformation-potential
constants Ξc = −3.8 eV and Ξv = −2 eV, and the ratio Ξcv/Ξc = 1/3 (this ratio is not
known for HgTe, we use the ratio for GaAs [29]). The band gap δ and overlap integrals ζj
are calculated numerically in the k · p-model [32].
Figure 3 shows the dependence of the shift current on the Fermi level position calculated
after Eq. (26). Curves of different colors correspond to the QWs with different band gap
which can be controlled in HgTe/CdHgTe structures by the QW thickness. Moreover, in
HgTe/CdHgTe structures the Fermi level position can be tuned from the conduction to the
valence subband by applying the gate voltage. Figure 3 shows that the current flows in the
opposite directions in n-type and p-type structures. At small densities of electrons or holes,
when the Fermi level εF is close to ±δ, respectively, the electric currents reach the values
jc,v = ±e sin 2θ
√
32
2π2
Ξcv∆T
ρA3d3 [(2 ± 1)(Ξcζ1 + Ξvζ4) + (2 ∓ 1)Ξvζ3] .
(27)
11
FIG. 3. Dependence of the shift current on the Fermi level position calculated after Eq. (26)
for different band gaps δ, the parameters relevant to the HgTe/CdHgTe QWs, ∆T = 10 K, and
θ = π/4. Black line correspond to δ = 5 meV (QW width 5 nm), blue line to δ = 10 meV (width
5.6 nm) and red line to δ = 20 meV (width 6.0 nm).
The theory of the shift current is developed here for a small deviation between the effective
It gives j ∼ nA/cm for ∆T = 10 K and the energy
relaxation by acoustic phonons. If fact, the current magnitude is proportional to the rate
electron and lattice temperatures.
of energy transfer between the electron and lattice subsystems. The estimations above
correspond to the energy transfer rate E ∼ 0.3 mW/cm2. In real experiments on electron
E can be orders of magnitude larger giving rise to
gas heating by THz or optical pulses,
much stronger electric current.
EFEFδ-δ2δ2δ-40-2002040-1.6-1.2-0.8-0.400.40.81.2Fermilevel,εF(meV)Shiftcurrent,j(nA/cm) V. SUMMARY
12
We have shown that the energy relaxation of a heated (or cooled) electron gas in low-
symmetry quantum wells by phonons drives a direct electric current and developed a mi-
croscopic theory of such a phonogalvanic effect. The current originates from the shifts in
the real space that the Bloch electrons experience in the course of quantum transitions at
emission or absorption of phonons. When the thermal equilibrium between the electron and
phonon subsystems is broken and the subsystems are characterized by different effective
temperatures, the shifts get a preferable direction, which results in a net electric current.
We have calculated the electric current for the deformation mechanisms of electron-phonon
interaction in narrow band gap zinc-blende quantum wells.
This work was supported by the Government of the Russian Federation (contract #
14.W03.31.0011 at Ioffe Institute). G.V.B also acknowledges the support from the BASIS
foundation.
[1] R. P. Feynman, R. B. Leighton, and M. Sands, "The feynman lectures on physics vol 1,"
(San Francisco, CA: Pearson, 2006) Chap. 46.
[2] P. Sturman and V. Firdkin, Photovoltaic and Photo-refractive Effects in Noncentrosymmetric
Materials, Ferroelectricity and related phenomena (Taylor & Francis, 1992).
[3] P. Reimann, Physics Reports 361, 57 (2002).
[4] P. Hanggi and F. Marchesoni, Reviews of Modern Physics 81, 387 (2009).
[5] J. Bang, R. Pan, T. M. Hoang, J. Ahn, C. Jarzynski, H. T. Quan, and T. Li, New Journal of
Physics 20, 103032 (2018).
[6] E. M. Hohberger, A. Lorke, W. Wegscheider, and M. Bichler, Applied Physics Letters 78,
2905 (2001).
[7] E. L. Ivchenko and S. D. Ganichev, JETP Letters 93, 673 (2011).
[8] A. D. Chepelianskii, M. V. Entin, L. I. Magarill, and D. L. Shepelyansky, Physical Review E
78 (2008), 10.1103/physreve.78.041127.
[9] S. A. Tarasenko, Physical Review B 83 (2011), 10.1103/physrevb.83.035313.
[10] C. Drexler, S. A. Tarasenko, P. Olbrich, J. Karch, M. Hirmer, F. Muller, M. Gmitra, J. Fabian,
13
R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Wang, R. Vajtai, P. M. Ajayan, J. Kono, and
S. D. Ganichev, Nature Nanotechnology 8, 104 (2013).
[11] G. V. Budkin and S. A. Tarasenko, Phys. Rev. B 93, 075306 (2016).
[12] S. D. Ganichev, E. L. Ivchenko, V. V. Bel'kov, S. A. Tarasenko, M. Sollinger, D. Weiss,
W. Wegscheider, and W. Prettl, Nature 417, 153 (2002).
[13] G. Seibold, S. Caprara, M. Grilli, and R. Raimondi, Physical Review Letters 119 (2017),
10.1103/physrevlett.119.256801.
[14] D. Smirnov and L. Golub, Physical Review Letters 118 (2017), 10.1103/phys-
revlett.118.116801.
[15] J. M. Luttinger, Physical Review 112, 739 (1958).
[16] N. A. Sinitsyn, Journal of Physics: Condensed Matter 20, 023201 (2007).
[17] N. Nagaosa, J. Sinova, S. Onoda, A. H. MacDonald, and N. P. Ong, Rev. Mod. Phys. 82,
1539 (2010).
[18] L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S.
Averkiev, K. I. Kugel, and V. Tripathi, Scientific Reports 5 (2015), 10.1038/srep17158.
[19] I. A. Ado, I. A. Dmitriev, P. M. Ostrovsky, and M. Titov, Phys. Rev. B 96, 235148 (2017).
[20] C. Xiao, Y. Liu, M. Xie, S. A. Yang, and Q. Niu, Phys. Rev. B 99, 245418 (2019).
[21] V. I. Belinicher, E. L. Ivchenko, and B. I. Sturman, Sov. Phys. JETP 56, 359 (1982).
[22] L. E. Golub and E. L. Ivchenko, JETP 112, 152 (2011).
[23] E. M. Baskin, L. I. Magarill, and M. V. Entin, Fizika Tverdogo Tela 20, 2432 (1978).
[24] B. A. Bernevig, T. L. Hughes, and S.-C. Zhang, Science 314, 1757 (2006).
[25] R. Winkler, L. Wang, Y. Lin, and C. Chu, Solid State Communications 152, 2096 (2012).
[26] S. A. Tarasenko, M. V. Durnev, M. O. Nestoklon, E. L. Ivchenko, J.-W. Luo, and A. Zunger,
Phys. Rev. B 91, 081302 (2015).
[27] V. Gantmakher and I. Levinson, Carrier scattering in metals and semiconductors, Modern
problems in condensed matter sciences (North-Holland, 1987).
[28] G. Bir and G. Pikus, Symmetry and Strain-induced Effects in Semiconductors, A Halsted
Press book (Wiley, 1974).
[29] G. E. Pikus, V. A. Marushchak, and A. N. Titkov, Sov. Phys. Semicond. 22, 115 (1988).
[30] P. Olbrich, C. Zoth, P. Vierling, K.-M. Dantscher, G. V. Budkin, S. A. Tarasenko, V. V.
Bel'kov, D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, and S. D. Ganichev,
14
Phys. Rev. B 87, 235439 (2013).
[31] S. Adachi, Handbook on Physical Properties of Semiconductors. Volume 3: II -- VI Compound
Semiconductorst (Kluwer Academic Publishers, 2004).
[32] K.-M. Dantscher, D. A. Kozlov, P. Olbrich, C. Zoth, P. Faltermeier, M. Lindner, G. V. Budkin,
S. A. Tarasenko, V. V. Bel'kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, D. Weiss,
B. Jenichen, and S. D. Ganichev, Phys. Rev. B 92, 165314 (2015).
|
1501.02644 | 1 | 1501 | 2015-01-12T13:50:49 | Discrete relaxation of exciton-polaritons in an inhomogeneous potential | [
"cond-mat.mes-hall"
] | We present indications, that the wave function-stiffness condition during energy-relaxation as observed in single-phase state quantum systems manifests also in a single particle ensemble. This is demonstrated for exciton-polaritons in the strong coupling regime in a ZnO-based microcavity at T = 10 K for non-resonant excitation. It is well known that the pump-induced spatially inhomogeneous background potential leads to nearly equally spaced energy levels in the k-space distribution for propagating polariton Bose-Einstein condensates. Surprisingly this particular pattern is also observable for uncondensed exciton-polaritons. | cond-mat.mes-hall | cond-mat | Discrete relaxation of exciton-polaritons in an inhomogeneous
potential
T. Michalsky, H. Franke, C. Sturm, M. Grundmann, and R. Schmidt-Grund
Universitat Leipzig, Linn´estrasse 5, D-04103 Leipzig, Germany
(Dated: May 8, 2019)
Abstract
We present indications, that the wave function-stiffness condition during energy-relaxation as ob-
served in single-phase state quantum systems manifests also in a single particle ensemble. This is
demonstrated for exciton-polaritons in the strong coupling regime in a ZnO-based microcavity at
T = 10 K for non-resonant excitation. It is well known that the pump-induced spatially inhomoge-
neous background potential leads to nearly equally spaced energy levels in the k -space distribution
for propagating polariton Bose-Einstein condensates. Surprisingly this particular pattern is also
observable for uncondensed exciton-polaritons.
5
1
0
2
n
a
J
2
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
4
4
6
2
0
.
1
0
5
1
:
v
i
X
r
a
1
I.
INTRODUCTION
In microcavities (MCs) exciton-polaritons (polaritons) are composite particles with
partly photonic and excitonic properties. Their bosonic character allows them to undergo
the phase transition to a macroscopically coherent state known as a dynamic Bose-Einstein
condensate (BEC) which was first experimentally shown in 2006 in CdTe-based MCs [1] at
liquid helium temperatures. Since then BECs in MCs have evolved to be a model system
for research in many topics of modern physics, like superfluidity [2], vortex-generation [3]
and ballistic transport phenomena [4] leading to novel devices like all-optical polariton
switches [5] and transistors [6]. In this context often a varying background potential is used
to accelerate the condensed particles. Relaxation processes connected to this background
potential have been observed by several groups [4, 7 -- 10]. Wouters et al. [11] developed
a description of the occuring phenomena in terms of energy conservation and scattering
properties.
In this work, we present experimental results suggesting that this model can
also be applied to a certain extent to an ensemble of uncondensed polaritons.
II. EXPERIMENTAL METHODS
The investigated ZnO-based MC is the same as has been described in Ref. [10]. The
MC contains a wedge-shaped cavity layer giving access to a wide range of detuning values
∆ between the uncoupled cavity-photon mode and the excitonic transition energy. We used
a frequency tripled and modelocked Ti:Sa laser at a wavelength of 266 nm for non resonant
excitation. The pulse width was 2 ps at a repetition rate of 76 MHz. The laser beam was
focused on an area of about 5 µm2 through an UV objective with a magnification of 50 and
a numerical aperture (NA) of 0.4 corresponding to a detectable angular range of ±23◦. The
detection of the light emitted from the sample was realized in a confocal configuration. The
lens setup allows for the imaging of the momentum (k -) as well as of the real space. In order
to investigate relaxation processes which take place in the region where the pump-induced
background potential is strongly inhomogeneous, a pinhole (PH) was put in an intermediate
image plane so that only the emission from the central excitation area of about 3 µm2
was detected.
If the PH is used the lower polariton branch (LPB) emission is spectrally
2
broadened and smeared out. This is caused by diffraction at the PH as follows from the
Heisenberg principle: ∆x∆k ≥ 0.5. Furthermore the detectability of high-k emission is
suppressed as the cryostat window introduces spherical aberrations which strongly increase
with the emission angle causing these rays to be blocked at the PH.
III. EXPERIMENTAL RESULTS AND DISCUSSION
The following results are taken from a sample position corresponding to ∆ = −30 meV
(∼ 0.6× the coupling constant of V = 50 meV) at T = 10 K. Figure 1 shows the polariton
emission below (a) and above (b) the condensation threshold without PH and includes the
calculated dispersion relations of the uncoupled exciton (X) and cavity-photon mode (C) [12].
In the uncondensed case the lower polariton branch (LPB) with a homogeneous broadening
of γuncond = (2.8 ± 0.2) meV is clearly visible without any recognizable further features.
Above the condensation threshold (Fig. 1 (b) and (c)) several dispersionless states appear
bounded by the dispersion relation of the uncondensed polaritons. These states are roughly
equally spaced in energy (see Fig. 1 (c)) with a distance of ∆Er,cond = (1.7 ± 0.3) meV and
a homogeneous broadening of γcond = (1.5 ± 0.2) meV. Thus one can conclude that the
condensate lifetime is roughly twice as high as for the uncondensed polaritons. The relative
occupation of the condensate states changes with in-plane momentum and does not show a
regular pattern. Please note that the spectral broadening of the condensate states shown in
Fig. 1 (b) and (c) is increased additionally to the lifetime broadening by temporal potential
fluctuations due to the short Ti:Sa pump-laser pulses [13]. The homogeneous broadening of
the condensate emission was determined via fitting Voigt-oscillators to PL spectra obtained
from experiments [10, 14] with a diode laser with a pulse duration of 500 ps acting as
quasi continuous excitation and yielding spectrally narrower condensate states. The lowest
energy condensate state at 3.320 eV is excluded in Fig. 1 (c) because of its very strong
inhomogeneous broadening. This is caused by the relatively long effective lifetime of this
condensate state whose energy follows the decreasing background potential as time resolved
measurements (not shown here) reveal.
Regarding the k -space pattern for increasing excitation power, the situation changes when
only photons are detected which were emitted from the central excitation area where the
3
Figure 1. Energy resolved k -space image of the LPB for ∆ = −30 meV at T = 10 K (a) below
(0.04 Pth) and (b) above (1.6 Pth) the condensation threshold. One has to note that there is
a pale ghost image of the LPB shiftes by about 8 µm−1 to negative k
values produced by the
monochromator in (a). The modeled uncoupled exciton and the cavity-photon dispersion are
marked with X and C, respectively. (c) shows the PL spectrum at k
= 0 µm−1 from the red
marked region in (b). ∆Er,cond marks the energy spacing between the dispersionless condensate
states. In order to specify the spectral position of these states the measured data (black symbols)
were fitted with Voigt oscillators (gray lines).
pump-induced background potential is strongly inhomogeneous. This is shown in Fig. 2,
where one can clearly see that in addition to the dominating LPB two further polariton
branches become visible at higher energies even far below the condensation threshold. It is
important to note that for increasing excitation density the distance in energy of ∆Er,uncond =
(3.3 ± 0.1) meV between these additional branches stays constant as demonstrated more
clearly by the k = −2 µm−1 spectra in Figure 2 (b). As the excitation density increases
the LPB branches are shifted towards higher energies caused by the repulsive Coloumb
interaction between the polaritons according to their excitonic parts and the interaction
with hot carriers [15]. One should be aware of the fact that these additional branches
are not symmetrical to k = 0 µm−1 because the irregular bar-like laser spot profile, a
consequence of the birefringent frequency tripling crystals, destroys rotational symmetry,
as shown in Fig. 3 (a). At high excitation densities (10 Pth in Fig. 2 (a) and 2 (b)) the
bare cavity-photon mode becomes visible as the particle density reaches the Mott transition.
This is accompanied by the disappearance of condensate emission. As mentioned above, at
4
Figure 2. (a) shows the normalized energy resolved k -space images for different excitation densities.
The red bar in the first image marks the k channel the spectra in (b) are taken from. Note that
the intensity scale is logarithmic.
In (b) E0 represents the polariton emission of lowest energy,
∆Er,uncond marks the energy spacing between two emission states which correspond to blueshifted
polaritons and C represents the energy of the uncoupled cavity mode.
the condensation threshold new dispersionless states appear in the energy resolved k -space
images being roughly equally spaced in energy. They belong to the coherent emission of
condensates [16] being expelled from the central excitation area [4, 17]. The appearance of
these states in the condensed phase has been observed also by other groups [4, 7 -- 9] and was
explained in [11, 17] as a consequence of the spatially inhomogeneous background potential
induced by the optical pumping. The roughly equal energy distances between these states
were attributed to the dynamical balance of in- and outscattering rates for bosonic states of
different energy [11]:
Γin = Γout
(1)
Following the ansatz of Wouters et al.
[11] the inscattering rate Γin for a polaritonic (or
bosonic) state is proportional to the energy distance to the initial state of the scattering
process:
Γin = κ × ∆Er
5
(2)
Here the scattering constant κ has a unit of an inverse action, for simplicity not being
normalized to a unit density as in the original paper of Wouters et al. [17]. The outscat-
tering rate Γout of a state is limited by its radiative lifetime and is therefore assumed to be
proportional to the homogeneous spectral broadening γ:
Γout ≃
γ
(3)
This means that for states with a doubled outscattering rate (∝ doubled spectral broadening)
the energetical distance ∆Er to the next state has to be twice as high to reach a compensation
of in- and outscattering rates, as can be seen from equations (1) and (2). Exactly this is
the case in our sample when we compare the condensate emission with the emission from
the uncondensed polariton ensemble. From our experimental results we can deduce the
bosonic scattering constant to be κ = (0.8 ± 0.4) −1. This result, namely that the spectral
broadening of a condensate state is roughly the same as the energy spacing between relaxing
condensate states was also observed in [4, 7, 8]. The consistent applicability of this simple
model to both, the condensed and the uncondensed phase, leads to the conclusion that in a
varying background potential discrete relaxation processes take place in both phases which
can be described with one scattering constant κ being independent of the particle density
within the observed range of more than two orders of magnitude.
The relaxation in the potential landscape is accompanied with an effective acceleration
towards the peripheral region of the excitation spot where the local potential energy is
smaller. To show this, we recorded the laser spot intensity distribution on and the emission
of uncondensed polaritons from the sample surface (Fig. 3). It can be clearly seen that
the main emission of uncondensed polaritons is coming from the spatial region where the
laser light intensity is smaller. Here the uncondensed polaritons could be trapped in the
area of the first minimum of the excitation laser spot (see inset of Fig. 3 (b)), providing
another explanation for the appearance of the observed discrete polariton states, namely
the quantization in a potential trap created by first diffraction minimum of the pump laser
spot. But this seems not reasonable as both, the uncondensed and the condensed polaritons
should feel more or less the same trapping potential resulting in equal energy spacings for the
trapped uncondensed and condensed polaritons (∆Er,uncond
!
= ∆Er,cond), which is obviously
not the case.
6
Figure 3. The real space image of the laser spot on the sample surface is shown in (a) whereas
the LPB emission below the condensation threshold is shown in (b). The inset in (b) shows the
normalized intensity profile of the laser spot (red) and the polariton emission (black) along the
dashed green line.
IV. CONCLUSION
We have shown experimental results giving hints that the model [11] of relaxation pro-
cesses describing condensed polaritons in a spatially varying potential landscape is also
valid for the uncondensed phase. This assumption is supported by real and k -space images
revealing discrete polariton energy levels of constant (energy-) spacing in k -space and an
accumulation of polaritons in the peripheral region of the pump-induced potential hill shown
by real space emission imaging. From our experimental results we could derive a value for
the bosonic scattering constant in ZnO MC which is close to −1.
V. ACKNOWLEDGEMENT
We thank H. Hochmuth and M. Lorenz for their support during the growth of the sample.
Funding by DFG within Gru1011/20-2 and FOR1616 (SCHM2710/2-1) is acknowledged.
[1] J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M.
Marchetti, M. H. Szymanska, R. Andr´e, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud,
and L. S. Dang, Nature 443, 409 (2006).
7
[2] A. Amo, J. Lefr`ere, S. Pigeon, C. Adrados, C. Ciuti, I. Carusotto, R. Houdr´e, E. Giacobino,
and A. Bramati, Nature Phys. 5, 805 (2009).
[3] K. G. Lagoudakis, M. Wouters, M. Richard, A. Baas, I. Carusotto, R. Andr´e, L. S. Dang,
and B. Deveaud-Pl´edran, Nature Phys. 4, 706 (2008).
[4] E. Wertz, L. Ferrier, D. D. Solnyshkov, R. Johne, D. Sanvitto, A. Lemaıtre, I. Sagnes,
R. Grousson, A. V. Kavokin, P. Senellart, G. Malpuech,
and J. Bloch, Nature Phys. 6,
860 (2010).
[5] F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse,
M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. R´everet, D. Solnyshkov,
J. Z´uniga-P´erez, and G. Malpuech, Phys. Rev. Lett. 110, 196406 (2013).
[6] C. Ant´on, T. C. H. Liew, G. Tosi, M. D. Mart´ın, T. Gao, Z. Hatzopoulos, P. S. Eldridge, P. G.
Savvidis, and L. Vina, Appl. Phys. Lett. 101, 261116 (2012).
[7] T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butt´e,
N. Grandjean, L. Orosz, F. R´everet, J. Leymarie, J. Z´uniga-P´erez, M. Leroux, F. Semond,
and S. Bouchoule, Appl. Phys. Lett. 99, 161104 (2011).
[8] S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis,
A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butt´e, E. Feltin, J.-F. Carlin,
and
N. Grandjean, Phys. Rev. Lett. 98, 126405 (2007).
[9] D. N. Krizhanovskii, K. G. Lagoudakis, M. Wouters, B. Pietka, R. A. Bradley, K. Guda, D. M.
Whittaker, M. S. Skolnick, B. Deveaud-Pl´edran, M. Richard, R. Andr´e, and L. S. Dang, Phys.
Rev. B 80, 045317 (2009).
[10] H. Franke, C. Sturm, R. Schmidt-Grund, G. Wagner, and M. Grundmann, New J. Phys. 14,
013037 (2012).
[11] M. Wouters, T. C. H. Liew, and V. Savona, Phys. Rev. B 82, 245315 (2010).
[12] C. Sturm, H. Hilmer, B. Rheinlander, R. Schmidt-Grund, and M. Grundmann, Phys. Rev. B
83, 205301 (2011).
[13] D. Sanvitto and V. Timofeev, eds., Exciton Polaritons in Microcavities (Springer, 2012).
[14] H.
Franke,
PLD-grown
ZnO-based microcavities
for Bose-Einstein Condensa-
tion of Exciton-Polaritons, Ph.D.
thesis, Universitat Leipzig
(2012), http://nbn-
resolving.de/urn:nbn:de:bsz:15-qucosa-98174.
8
[15] C. Ciuti, V. Savona, C. Piermarocchi, A. Quattropani, and P. Schwendimann, Phys. Rev. B
58, 7926 (1998).
[16] M. Thunert, A. Janot, H. Franke, C. Sturm, T. Michalsky, M. D. Mart´ın, L. Vina, B. Rosenow,
M. Grundmann, and R. Schmidt-Grund, arXiv:1412.8667 (2014).
[17] M. Wouters, I. Carusotto, and C. Ciuti, Phys. Rev. B 77, 115340 (2008).
9
|
1702.03119 | 1 | 1702 | 2017-02-10T10:19:03 | Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular dependent spin pumping measurements | [
"cond-mat.mes-hall"
] | We quantify the relative weight of inverse spin Hall and spin rectification effects occurring in RF-sputtered polycrystalline permalloy, molecular beam epitaxy-grown epitaxial iron and liquid phase epitaxy-grown yttrium-iron-garnet bilayer systems with different capping materials. To distinguish the spin rectification signal from the inverse spin Hall voltage the external magnetic field is rotated in-plane to take advantage of the different angular dependencies of the prevailing effects. We prove that in permalloy anisotropic magnetoresistance is the dominant source for spin rectification while in epitaxial iron the anomalous Hall effect has an also comparable strength. The rectification in yttrium-iron-garnet/platinum bilayers reveals an angular dependence imitating the one seen for anisotropic magnetoresistance caused by spin Hall magnetoresistance. | cond-mat.mes-hall | cond-mat | a
Relative weight of the inverse spin Hall and spin rectification effects for
metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular
dependent spin pumping measurements
S. Keller,1 J. Greser,1 M. R. Schweizer,1 A. Conca,1 B. Hillebrands,1 and E. Th. Papaioannou1
Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universitat Kaiserslautern,
Erwin-Schrodinger-Str. 56, 67663 Kaiserslautern, Germany
(Dated: 13 February 2017)
We quantify the relative weight of inverse spin Hall and spin rectification effects occurring in RF-sputtered
polycrystalline permalloy, molecular beam epitaxy-grown epitaxial iron and liquid phase epitaxy-grown
yttrium-iron-garnet bilayer systems with different capping materials. To distinguish the spin rectification
signal from the inverse spin Hall voltage the external magnetic field is rotated in-plane to take advantage of
the different angular dependencies of the prevailing effects. We prove that in permalloy anisotropic magne-
toresistance is the dominant source for spin rectification while in epitaxial iron the anomalous Hall effect has
an also comparable strength. The rectification in yttrium-iron-garnet/platinum bilayers reveals an angular
dependence imitating the one seen for anisotropic magnetoresistance caused by spin Hall magnetoresistance.
Spintronic bilayers composed of a ferromagnetic (FM)
and a nonmagnetic (NM) layer with large spin-orbit-
interaction are promising devices for the spin-to-charge
conversion for future applications. At ferromagnetic res-
onance (FMR) the spin pumping (SP) effect allows for
the injection of a pure spin current from the FM into the
NM layer1. There, the spin current is converted into a
charge current by the inverse spin Hall effect (ISHE)2.
A wide range of metallic, semiconducting or insulating
ferro-3 and ferrimagnets4 and NM5 materials, like Au,
Pd, Ta, W, and Pt, have been investigated up to this
point. In metallic FM layers, an overlapping additional
effect take place, the so called spin rectification (SR) ef-
fect, which hinders the access to the pure ISHE signal.
Different approaches for separation have been thoroughly
investigated6–8. Thickness variations of the FM and the
NM layers show different dependencies for ISHE and SR,
but require a lot of effort for producing whole sample
series or wedged microstructures. Another method is a
sweep of the excitation frequency, which cannot be ap-
plied to all experimental setups and requires a careful
calibration of the microwave transmission properties of
the setup. Also the minimization of the electrical mi-
crowave field at the location of the sample by using a
microwave cavity is possible, but in most cases only fixed
frequencies can be applied. The rotation of the magneti-
zation angle by rotating the external magnetic field in- or
out-of-plane is one of the most common and practicable
methods, with out-of-plane rotation normally requiring
larger magnetic fields for thin films7,8. Here, we quan-
tify with the help of the in-plane angular dependent spin
pumping measurements the ISHE and the SR contribu-
tions, mainly anisotropic magnetoresistance (AMR) and
anomalous Hall effect (AHE). Therefore, bilayers com-
posed of magnetic (Fe, Py, and YIG) and non-magnetic
(Pt, Al and MgO) materials have been used. Capping
layers with significant spin Hall angle ΘSH (Pt) should
show a large ISHE, while materials with small ΘSH (Al)
and insulating materials (MgO) should not. All bilayer
FIG. 1. Experimental setup and coordinate system: x, y and
z are the lab fixed coordinates. The external field ~H rotates
in-plane, while the angle ΘH is defined as the angle between
z and ~H. The bilayer films are lying in the x and z plane
and y is the out-of-plane coordinate. The exciting stripline
antenna is parallel to z and is generating an in-plane dynamic
magnetic field hx, an out-of-plane field hy and also a dynamic
electrical field ez, which induces an electrical current jz in the
samples in z direction. Eddy currents jeddy potentially can
flow transverse to the microwave electrical field in x direction.
The electrical contacts for measuring the DC voltage are ei-
ther transverse (Vx) or parallel (Vz) to the stripline antenna.
samples with metallic FM (Py/Al, Py/Pt, Fe/MgO and
Fe/Pt) have the dimensions of (10 × 10) mm2, while the
YIG/Pt sample is of smaller dimensions (2 × 3) mm2.
We first address the measurements on polycrystalline
Py/Pt and Py/Al bilayers, that is, with presence and ab-
sence of ISHE voltage, respectively. We will use the data
of this model system to illustrate the angular dependence
of the measured signal and the analysis method used
2
FIG. 2. Theoretical in-plane magnetization angular depen-
dencies of spin rectification effects and ISHE with contacts
transverse to the microwave antenna (x direction) and differ-
ent dynamic magnetic field geometries, adapted from Harder
et. al.8. ΘH is the magnetic field angle (defined in Fig. 1),
AL and AD are the amplitudes of the effects contributing to
the symmetric voltage (L: Lorentzian) and the antisymmetric
voltage (D: Dispersive).
to separate the different contributions. Second, we will
present the data for epitaxial Fe/Pt and Fe/MgO samples
and we will apply again the same analysis method com-
paring the weights of the different contributions with the
Py case. Finally, results in YIG/Pt bilayers are presented
to compare the situation for a system with an insulating
magnetic layer where no AMR or AHE can be present.
Prior to concluding, we will present some important re-
marks about the validity and limitations of the analysis
method based on angular measurements.
In the experiment for a fixed excitation frequency and
external field angle, the external field amplitude is swept.
The voltage measured by lock-in-amplification technique
exhibits peaks consisting of symmetric and antisymmet-
ric components which are fitted by the following equation
for each individual external magnetic field sweep5:
Vmeas(H) =Vsym
(∆H)2
(H − HFMR)2 + (∆H)2
+ Vasym
−2∆H(H − HFMR)
(H − HFMR)2 + (∆H)2 ,
(1)
where Vsym and Vasym are the amplitude of the symmetric
and antisymmetric components, respectively. ∆H is the
FIG. 3. Angular dependent spin pumping measurements of
Py(12nm)/Al(10nm) (top graph) and Py(12nm)/Pt(10nm)
(bottom graph) at 13 GHz excitation frequency with contacts
transverse to the direction of the stripline antenna. Black and
orange arrows are highlighting the side-maxima/minima orig-
inating from AMR.
linewidth, H is the applied magnetic field, and HFMR is
the corresponding FMR field value. While the SP/ISHE
effect contributes only to Vsym, the SR effects contribute
to both voltage amplitudes. The relative contribution of
AMR to Vsym and Vasym and AHE to Vsym and Vasym
is determined by the phase difference between the dy-
namic magnetization ~m(t) and the microwave electrical
field induced AC current ~j(t) inside the FM layer. This
phase difference is not easily accessible5 and the relative
contribution of AMR does not necessarily have to be the
same as the one of AHE8. To fit the measured voltage
amplitudes it is needed to calculate the angular depen-
dencies of SP/ISHE and SR (a detailed derivation can be
found in7,8). The symmetric as well as the antisymmetric
voltage will then be fitted.
First let us consider the coordinate system (see Fig. 1),
where x and z are the in-plane and y the out-of-plane
lab fixed coordinates, ΘH is the angle between the ex-
ternal magnetic field ~H and the z axis. The electrical
contacts are either in x (transverse to the stripline an-
tenna) or z (parallel to the stripline antenna) direction.
jz induced by the microwave electrical field ez and jeddy
in x direction (explained later) are the in-plane current
components. The dynamic magnetic microwave fields hx
(in-plane) and hy (out-of-plane) are determined by the
microwave stripline antenna.
At first the model of the measurements, where the DC
voltage is measured in x direction (transverse to the an-
tenna, shown in Fig. 1), is discussed: For this measure-
ment configuration significant values for jz and hx (in-
plane dynamic magnetic field component), and smaller
values for hy (out-of-plane dynamic magnetic field com-
ponent), which is estimated a magnitude smaller than
the in-plane field components, are considered. The the-
oretical angular dependencies of the underlying effects
are graphically shown in Fig. 27,8.
It can be recog-
nized that in-plane excited AHE is similar to in-plane
excited ISHE bearing only one maximum and one mini-
mum, but with different slopes at zero crossing. In-plane
excited AMR is showing three maxima/minima where
one is of higher amplitude (referred to as main maxi-
mum/minimum in the following) and two of smaller am-
plitude (referred to as side maxima/minima). Out-of-
plane excited AMR is showing two maxima/minima with
equal amplitude. Out-of-plane AHE will generate a con-
stant offset and out-of-plane ISHE has an identical shape
as in-plane AHE and can therefore not be distinguished
from it. As to be shown later in the measurements for the
Py samples, an additional AMR effect also takes place.
This AMR effect is shown in Fig. 2 in blue and is the only
one antisymmetric around 0◦. This AMR scales with an
electrical current jx perpendicular to the microwave in-
duced currents and with an out-of-plane microwave field
component hy and is affiliated to eddy currents9. To fit
the experimental data all considered effects are linear su-
perimposed:
ISHE cos3(ΘH) + V hy ,hx
sym = V hx
V x
V hy
AHE + V hx,jz
AMR cos(2ΘH) + V hy,jeddy
V hy ,jz
AMR
AMR cos(2ΘH) cos(ΘH) +
ISHE,AHE cos(ΘH) +
asym = V hx
V x
AHE +
AHE cos(ΘH) + V hy
V hx,jz
AMR cos(2ΘH) cos(ΘH) +
AMR cos(2ΘH) + V hy,jeddy
V hy ,jz
AMR
sin(2ΘH).
(2)
sin(2ΘH).
Equations 2 were then used to fit the angular depen-
dent spin pumping measurements shown in Fig. 3 and 4
for the of Vsym and Vasym of Py/Al, Py/Pt, Fe/MgO and
Fe/Pt bilayers. The voltage amplitudes from the fits of
the Py and Fe sample measurements have been summa-
rized in Table I for comparison.
After familiarizing with the angular dependencies of
the ISHE and SR effects the measurements for the Py bi-
layers are now discussed: In Fig. 3 we see for the Py/Al
3
FIG. 4. Angular dependent spin pumping measurements of
Fe(12nm)/MgO(10nm) (top graph) and Fe(12nm)/Pt(10nm)
(bottom graph) at 13 GHz excitation frequency with contacts
transverse to the direction of the stripline antenna.
sample that the signal is mainly consisting of AMR in
the symmetric as well as in the antisymmetric ampli-
tude, since the signals exhibit pronounced side-maxima
(arrows). The antisymmetric voltage amplitude of Py/Pt
has almost identical shape as the one of Py/Al. For
both samples the AMR to AHE ratio of the antisymmet-
ric voltage is approximately 1 to 4 (see Table I). Py/Al
and Py/Pt also show that their side-maxima (arrows)
are having not the same amplitudes. This is correlated
to AMR caused by eddy currents with an out-of-plane
dynamic magnetic field component (see Table I).
The measurements of Fe/MgO and Fe/Pt can be seen
in Fig. 4. Since epitaxial Fe has a strong magneto-
crystalline anisotropy the magnetization will in general
not be aligned to the external magnetic field due to the
anisotropy fields. The ISHE and SR effects are, however,
only dependent on the angle of magnetization ΘM. For
this reason, an additional rescaling of the angle axis is re-
quired. A numerical analysis has been performed where
ΘM has been calculated for the data measured at ΘH.
For this K1/Ms (K1: cubic anisotropy constant, Ms:
Vsym/Vasym Sample V hx
ISHE (µV ) V hy ,hx
† (µV )
Vsym
Vasym
Py/Al
Py/Pt
Fe/MgO
Fe/Pt
Py/Al
Py/Pt
Fe/MgO
Fe/Pt
0
amb.
0
amb.
0
0
0
0
ISHE,AHE
1.43 ± 0.04
amb.
6.85 ± 0.12
amb.
-1.49 ± 0.05
-0.61 ± 0.03
4.07 ± 0.15
3.55 ± 0.09
amb.
V hy
AHE (µV ) V hx,jz
AMR (µV )
0.15 ± 0.02 5.63 ± 0.06
0.02 ± 0.02
-0.01 ± 0.05 5.12 ± 0.15
0.12 ± 0.05
0.03 ± 0.03 -5.95 ± 0.07
0.01 ± 0.01 -2.36 ± 0.04
0.07 ± 0.06 -6.20 ± 0.19
0.01 ± 0.04 -7.88 ± 0.11
amb.
4
V hy ,jz
AMR (µV )
0
0
0.18 ± 0.09
-0.25 ± 0.08
(µV )
hy ,jeddy
AMR
V
-1.68 ± 0.03
-0.61 ± 0.02
0
0
0
0
1.02 ± 0.04
0.44 ± 0.02
0.18 ± 0.10
0.13 ± 0.05
0
0
TABLE I. Results of the angular spin pumping measurements: symmetric and antisymmetric voltage amplitudes of Py/Al,
Py/Pt, Fe/MgO and Fe/Pt. Items marked with amb. are ambiguous (see text). The voltage of the effects mainly contributing
are marked in bold. The voltage marked with † corresponds to the term ∝ cos(ΘH), which is comprised of in-plane AHE and
out-of-plane ISHE in the symmetrical voltage and only of in-plane AHE in the antisymmetric voltage (to be seen in Fig. 1).
Absolute values between samples are not comparable because of different excitation frequencies.
saturation magnetization) has been extracted from the
dependence of HFMR on the frequency (Kittel fit10). For
RF-sputtered polycrystalline samples which are isotropic
ΘH and ΘM are identical. However, in the case of epi-
taxial Fe they can differ more than 10◦.
After the angle rescaling the angular dependent mea-
surements of the Fe bilayers can be discussed: In these bi-
layers (Fig. 4) in-plane excited AHE seems to be equally
prominent as in-plane excited AMR, as can be recognized
from the lack of side-maxima and also from the voltage
amplitudes of the fits shown in Table I. This is a main dif-
ference to the Py case where AMR is strictly dominant.
The AHE excited by the out-of-plane dynamic magnetic
field is rather small (as it also is in the case for Py). The
difference is not due to the difference in growth (poly- or
single-crystalline) of the FM layers. For instance, recent
results on also polycrystalline CoFeB/Pt and CoFeB/Ta
layers show that there AHE is the only dominant effect
while AMR is almost negligible11. The weight of the
different spin rectification contribution is reflecting only
the strength of the different effects (AHE, AMR) in the
ferromagnetic material. The different capping materials
(insulator, respectively metal) is changing the relative
contribution of the SR effects onto Vasym. Additionally
the epitaxial Fe samples, especially Fe/MgO, show char-
acteristic features around angles, where the external field
is oriented equidistant between the magnetic hard (e.g.
45◦) and easy axis (e.g. 0◦) of Fe. This is due to the
intrinsic magnetic anisotropy influencing the angular de-
pendencies of ISHE and SR.
In addition, to compare with the measurements of the
bilayers with metallic FM, a bilayer with an insulator
magnetic material was measured with the same setup.
For this YIG(100 nm)/Pt(10nm), where AMR and AHE
are suppressed, was chosen and the results are shown
in Fig. 5 (top graph) and Table II. A surprisingly non-
vanishing antisymmetric voltage with angular dependen-
cies similar to AMR and AHE can be seen. The sym-
metric voltage amplitude seems to be consisting mainly
of an ISHE contribution and of a contribution ∝ cos(ΘH)
which can be either in-plane ISHE or out-of-plane AHE,
as shown in Fig. 2. In order to understand this behav-
FIG. 5. Angular dependent spin pumping measurements of
YIG(100nm)/Pt(10nm) at 6.4 GHz excitation frequency with
contacts transverse (top graph) and parallel (bottom graph)
to the direction of the stripline antenna.
ior we performed a second measurement with electrical
contacts parallel to the stripline antenna (z-direction),
measurements shown in Fig. 5 (bottom graph). In this
contact geometry the ISHE and SR effects have differ-
ent angular dependencies as shown in Fig. 6. Here in-
Vsym/Vasym Contacts V hx
ISHE (µV ) V hy
ISHE (µV )
-1.35⋆
V hx
AHE (µV )
amb.
Vsym
Vasym
transverse
parallel
transverse
parallel
amb.
-1.48†
0
0
-1.82 ± 0.03 -0.19 ± 0.04
0.53 ± 0.03
0.11 ± 0.03
0
0
AMR (µV )
V hy
AHE (µV ) V hx,jz
-0.02 ± 0.01
0.05 ± 0.02
0.00 ± 0.01 0.20 ± 0.03
-0.01 ± 0.02 0.65 ± 0.04
amb.
0†
5
V hy ,jz
AMR (µV )
-0.04 ± 0.02
-0.09 ± 0.02
0.03 ± 0.02
-0.08 ± 0.03
TABLE II. Results of the angular spin pumping measurements: symmetric and antisymmetric voltage amplitudes of YIG/Pt
with contacts transverse and parallel to the microwave antenna. Values marked with * are ambiguous (see text). The voltage
of the effects mainly contributing are marked in bold. The out-of-plane ISHE voltage with transverse contacts marked with ⋆
has the same shape as the AHE and could easily be confused with it, but the comparison with the measurement with parallel
contacts confirms it as an ISHE voltage. In-plane ISHE in the parallel contacts case marked with † cannot be distinguished
from in-plane AMR. In-plane AMR and AHE in the symmetrical voltage are estimated small since out-of-plane AMR and AHE
are also small despite of relatively high out-of-plane excitation fields.
plane excited ISHE and AMR have the same angular de-
pendence, but the out-of-plane excited ISHE exhibits an
unique cos(ΘH) dependence. To fit the measured data
with contacts parallel to the antenna following equations
has been used:
sym = V hx
V z
ISHE,AMR sin(2ΘH) cos(ΘH) +
V hy
ISHE sin(ΘH) + V hx
AHE + V hy ,jz
V hy
AMR sin(2ΘH).
AHE cos(ΘH) +
(3)
AHE cos(ΘH) + V hy
asym = V hx
V z
V hx
AMR sin(2ΘH) cos(ΘH) +
V hy ,jz
AMR sin(2ΘH).
AHE +
Looking at Table II the out-of-plane ISHE contribution
V hy
ISHE in transverse contacts (−1.82µV ) has almost the
same value as the one of parallel contacts (−1.35µV ).
The discrepancy is roughly reflecting the difference in
sample width (2 mm) and length (3 mm) where the DC
contacts have been applied to. The term ∝ cos(ΘH) used
for the fit of Vsym in Fig. 5 (top graph) is therefore con-
firmed as out-of-plane ISHE contribution.
To understand the enhancement of the out-of-plane
magnetic microwave field component it is needed to con-
sider that the size of the YIG/Pt sample is much smaller
than the Fe and Py samples, its dimensions being closer
to the width of the stripline antenna. This changes the
distribution of the microwave fields and therefore en-
larges the out-of-plane field components to the extent
that they can be comparable in magnitude to the in-
plane fields.
In Fig. 5 (bottom graph) we also see a
non-vanishing antisymmetric voltage with AMR-like de-
pendence. Other authors also reported rectification ef-
fects in YIG/Pt bilayers in spin pumping experiments
at room temperature caused by spin Hall magnetoresis-
tance (SMR)12–14. SMR is a rectification effect occuring
in bilayers consisting of a FM insulator and a NM layer,
where a spin current induced by spin Hall effect (SHE)
forms a spin accumulation at the interface. When the
magnetization is aligned parallel to the polarization of
the accumulation, fewer spin currents can enter the FM
FIG. 6. Theoretical in-plane magnetization angular depen-
dencies of spin rectification effects and ISHE with contacts
parallel to the microwave antenna and different dynamic ex-
ternal magnetic field geometries, adapted from Harder et. al.8.
ΘH is the magnetic field angle (defined in Fig. 1), AL and
AD are denoting the amplitudes of the effects contributing to
the symmetric voltage (L: Lorentzian) and the antisymmetric
voltage (D: Dispersive).
layer and spin back-flow induces an additional charge cur-
rent by ISHE reducing the resistivity of the NM layer.
This in-plane angular dependent change in resistivity in-
duces effects similar to AMR and AHE. Additionally the
magnetic proximity effect can also contribute to spin rec-
tification in YIG/Pt bilayers15,16: a ferromagnetic layer
in contact to Pt can induce a finite magnetic moment in
Pt near the interface because of the high paramagnetic
susceptibility of Pt. This thin ferromagnetic Pt film can
also exhibit spin rectification by itself with the same an-
gular dependence. This is also true in metallic systems
but there the spin rectification generated by the FM layer
is dominating. Summarizing this section we have shown
that the symmetric voltage of YIG/Pt is mainly consist-
ing of ISHE contributions and the antisymmetric voltage
is indeed small but not negligible and consisting of SMR
induced rectification.
Furthermore, the results from the analysis of the
YIG/Pt can be used to interpret the ISHE contribution
in Py/Pt, seen in Fig. 3: There the side-maxima of the
symmetric amplitude are stronger pronounced than the
ones of Py/Al. This is due to the reduction of the am-
plitude of the main-maximum of Vsym of Py/Pt. The
reason for this is the opposite sign of the ISHE to the
SR contributions. As shown in Table II ISHE from the
YIG/Pt measurements shows a negative sign. The sign
of the ISHE voltage is determined by the sign of spin Hall
angle, the direction of the spin polarization and the direc-
tion of the spin current. They are all the same for both
Py/Pt and YIG/Pt, therefore, the voltages generated by
ISHE in Py/Pt and YIG/Pt should have the same sign.
In Tables I and II some values of the fits have not
been shown, indicated by "amb.". An intrinsic limita-
tion of the analysis procedure is present when rotating
the external magnetic field in-plane and investigating in-
plane excited effects. According to Equation 4 an ambi-
guity exists with the main in-plane contributions of this
measurement configuration: ISHE, AMR and AHE are
mathematically linearly dependent. Therefore, the abso-
lute values obtained from the fits for the Py/Pt, Fe/Pt
and YIG/Pt from Vsym may not be relevant. Neverthe-
less, the overall angular dependence and the Vasym data,
where no ambiguity is present, support the interpreta-
tions shown in this paper.
cos(2ΘH) cos(ΘH) =[2 cos2(ΘH) − 1] cos(ΘH)
=2 cos3(ΘH) − cos(ΘH).
(4)
In summary, we have shown that the spin rectification
effect does scale differently in Fe, Py and YIG bilayer
systems, as summarized in Table I and II: While AMR is
more pronounced than AHE in RF magnetron sputtered
Py, AHE seems to be equal in magnitude for epitaxial
Fe systems. Spin rectification with an angular depen-
dence similar to AMR is appearing in the antisymmetric
Lorentzian shape in nanometer thin YIG/Pt bilayer films
originating from the spin Hall magnetoresistance. The
symmetric signal of YIG/Pt is mainly consisting of equal
ISHE contributions excited by in- and out-of-plane dy-
namic magnetic fields. In epitaxial Fe systems the effects
due to non-collinearity between the external field and the
6
magnetization needs to be taken into account.
The Carl Zeiss Stiftung is gratefully acknowledged for
financial support.
1Y. Tserkovnyak, A. Brataas, and G. E. Bauer, Enhanced Gilbert
Damping in Thin Ferromagnetic Films, Phys. Rev. Lett. 88
117601 (2002).
2E. Saitoh, M. Ueda, H. Miyajima, and G. Tatara, Conversion of
spin current into charge current at room temperature: Inverse
spin-Hall effect, Appl. Phys. Lett. 88 182509 (2006).
3A. Conca, S. Keller, L. Mihalceanu, T. Kehagias, G. P. Dimi-
trakopulos, B. Hillebrands, E. Th. Papaioannou, Study of fully
epitaxial Fe/Pt bilayers for spin pumping by FMR spectroscopy,
Phys. Rev. B 93, 134405 (2016).
4F. D. Czeschka, L. Dreher, M. S. Brandt, M. Weiler, M. Altham-
mer, I.-M. Imort, G. Reiss, A. Thomas, W. Schoch, W. Limmer,
H. Huebl, R. Gross, and S. T. B. Goennenwein, Scaling behav-
ior of the spin pumping effect in ferromagnet/platinum bilayers,
Phys. Rev. Lett. 107 046601 (2011).
5A. Azevedo, L.H. Vilela-Leao, R.L. Rodr´ıguez-Su´arez, A.F. Lac-
erdo Santos, S.M. Rezende, Spin pumping and anisotropic mag-
netoresistance voltages in magnetic bilayers: Theory and exper-
iment, Phys. Rev. B 83, 144402 (2011).
6E.Th. Papaioannou, P. Fuhrmann, M.B. Jungfleisch, T. Bracher,
P. Pirro, V. Lauer, J. Losch, B. Hillebrands, Optimizing the spin-
pumping induced inverse spin Hall voltage by crystal growth in
Fe/Pt bilayers, Appl. Phys. Lett. 103, 162401 (2013).
7R. Iguchi, and E. Saitoh, Measurement of spin pumping voltage
separated from extrinsic microwave effects, arXiv:1607.04716v1
(2016).
8M. Harder, Y. Gui,
and C.-M. Hu, Electrical detec-
tion of magnetization dynamics via spin rectification effects,
arXiv:1605.00710v1 (2016).
9V. Flovik, and E. Wahlstroem, Eddy current interactions in a
Ferromagnet-Normal metal bilayer structure, and its impact on
ferromagnetic resonance lineshapes, J. Appl. Phys. 117 143902
(2015).
10C. Kittel, On the Theory of Ferromagnetic Resonance Absorp-
tion, Phys. Rev. 73, 155 (1948).
11A. Conca, B. Heinz, M. R. Schweizer, S. Keller, E. Th. Pa-
paioannou, and B. Hillebrands, Lack of correlation between the
spin mixing conductance and the ISHE-generated voltages in
CoFeB/Pt,Ta bilayers, arXiv:1701.09110v1 (2017).
12R. Iguchi, K. Sato, D. Hirobe, S. Daimon, and E. Saitoh, Effect of
spin Hall magnetoresistance on spin pumping measurements in
insulating magnet/metal systems, Appl. Phys. Express 7, 013003
(2014).
13P. Wang, S. W. Jiang, Z. Z. Luan, L. F. Zhou, H. F. Ding, Y.
Zhou, X. D. Tao, and D. Wu, Spin rectification induced by spin
Hall magnetoresistance at room temperature, J. Appl. Phys. 109,
112406 (2016).
14Z. Fang, A. Mitra, A. L. Westerman, M. Ali, C. Ciccarelli,
O. Cespedes, B. J. Hickey and A. J. Ferguson, Thickness de-
pendence study of current-driven ferromagnetic resonance in
Y3Fe5O12/heavy metal bilayers, arXiv:1612.06111 (2016).
15M. Caminale, A. Ghosh, S. Auffret, U. Ebels, K. Ollefs, F. Wil-
helm, A. Rogalev, and W. E. Bailey, Spin pumping damping and
magnetic proximity effect in Pd and Pt spin-sink layers, Phys.
Rev. B. 94, 014414 (2016).
16H. Nakayama, M. Althammer, Y.-T. Chen, K. Uchida, Y. Kaji-
wara, D. Kikuchi, T. Ohtani, S. Geprags, M. Opel, S. Takahashi,
R. Gross, G. E. W. Bauer, S. T. B. Goennenwein, and E. Saitoh,
Spin Hall magnetoresistance induced by a nonequilibrium prox-
imity effect, Phys. Rev. Lett. 110, 206601 (2013).
|
1006.1851 | 1 | 1006 | 2010-06-09T16:22:38 | Simulating multiple quantum well solar cells | [
"cond-mat.mes-hall"
] | The quantum well solar cell (QWSC) has been proposed as a route to higher efficiency than that attainable by homojunction devices. Previous studies have established that carriers escape the quantum wells with high efficiency in forward bias and contribute to the photocurrent. Progress in resolving the efficiency limits of these cells has been dogged by the lack of a theoretical model reproducing both the enhanced carrier gen- eration and enhanced recombination due to the quantum wells. Here we present a model which calculates the incremental generation and recombination due to the QWs and is verified by modelling the experimental light and dark current-voltage characteristics of a range of III-V quantum well structures. We find that predicted dark currents are significantly greater than experiment if we use lifetimes derived from homostructure devices. Successful simulation of light and dark currents can be obtained only by introducing a parameter which represents a reduction in the quasi-Fermi level separation. | cond-mat.mes-hall | cond-mat |
SIMULATING MULTIPLE QUANTUM WELL SOLAR CELLS
James P. Connolly a Jenny Nelson a Keith W.J. Barnham a Ian Ballard a C.Roberts a J.S. Roberts c C.T.Foxon d
a Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ
b Centre for Electronic Materials and Devices, Imperial College, London SW7 2BZ UK
c EPSRC III-V Facility, University of Sheffield, Sheffield S1 3JD UK
d University of Nottingham, Nottingham N67 2RD UK
Key words: Quantum well solar cell, dark current, light current, efficiency
1 abstract
The quantum well solar cell (QWSC) has been proposed as a
route to higher efficiency than that attainable by homojunc-
tion devices. Previous studies have established that carriers
escape the quantum wells with high efficiency in forward bias
and contribute to the photocurrent. Progress in resolving the
efficiency limits of these cells has been dogged by the lack of a
theoretical model reproducing both the enhanced carrier gen-
eration and enhanced recombination due to the quantum wells.
Here we present a model which calculates the incremental
generation and recombination due to the QWs and is verified
by modelling the experimental light and dark current-voltage
characteristics of a range of III-V quantum well structures. We
find that predicted dark currents are significantly greater than
experiment if we use lifetimes derived from homostructure de-
vices. Successful simulation of light and dark currents can be
obtained only by introducing a parameter which represents a
reduction in the quasi-Fermi level separation.
2 Introduction
The quantum well solar cell (QWSC) [1] consists of a p − i −
n structure with nm-wide regions of low bandgap (quantum
wells) in the nominally undoped intrinsic region where carriers
occupy discrete energy levels.
Experiment has shown ([2], [3]) that photo-excited electrons
and holes in these quantum wells escape with high efficiency
in forward bias and contribute to the photocurrent. If the pho-
tocurrent enhancement exceeds the dark current increase this
may be a highly efficient solar cell design.
Detailed balance arguments in the radiative limit [4] have sug-
gested the Voc is determined by the lowest absorption energy
which is the well bandgap. Further work [5] however indicates
that efficiency enhancements are possible over single bandgap
designs in non-radiative dominated structures. This has been
confirmed by work ([6] [7]) which showed smaller quasi-Fermi
level (QFL) separation in the wells than in the barriers. This
suggests that significant efficiency enhancements are possible
with this solar cell design.
This paper describes QWSC photocurrent and dark current
calculations with a view to establishing whether the effect
of enhanced photocurrent overcompensates the dark current
losses and secondly modelling the overall device performance.
The photocurrent is calculated from the diffusion equation
applied to photogenerated minority carriers in bulk and well
material and is well understood. The dark current aspect is a
1 Electronic mail: j.connolly@ic.ac.uk
Shockley-Read-Hall (SRH) calculation including an ideal diode
component. The model examines the extent to which the dark
current behaviour of QWSCs can be characterised in terms
of the quantum well density of states without considering es-
cape and capture rates from the quantum wells. Furthermore,
it explores the extent to which the QWSC dark current is de-
termined by the SRH recombination rates at the centre of the
intrinsic region, and for many wells where this methodology is
expected to be accurate. This is explored by modelling a range
of experimetally measured dark currents in the well charac-
terised GaAs/AlxGa1−xAs system.
3 QWSC current voltage model
The program "SOL" calculates the incremental light and dark
currents due to the quantum wells. It will be shown that the
changes in photocurrent and dark current can both be reduced
to functions of the quantum well densities of states.
The photocurrent model of the QWSC consists of a spectral
response calculation as a function of bias, cell dimensions and
quantum well energy spectrum. Cell photocurrents can then
be calculated for different incident light spectra and power
levels. This has been described for the GaAs/AlxGa1−xAs
GaAs/InxGa1−xAs InGaPx GaxAsP and InGa0.53xAsxP
materials systems [2], [3].
The dark currents measured in QWSC structures in these ma-
terials show idealities close to 2. This is characteristic of SRH
recombination in the depletion layer. The dark current model
applied here is a simplified implementation of a self consistent
model by Nelson et al [8] which has succesfully described the
dark currents of single quantum well cells for a range of single
well positions and i region background doping levels.
The carrier generation rate G at wavelength λ, position x, in-
cident photon flux F , R the surface reflectivity and absorption
coefficient α is defined as
G(x, λ) = F (λ)(1 − R(λ))α(x)e−R x
(1)
In the quantum wells the generation is calculated from Fermi's
golden rule governing transition probabilities between electron
and hole well states. These are found by solving the effective
mass equation for electrons and holes confined in the QW
within the envelope function approximation. Omitting con-
stants for brevity it is written as
αxdx
0
αqw ∼
Nstates
X
jn=1,jp=1
M 2H(Ejn − Ejp − ¯hω)
(2)
where the double sum is over initial and final valence and
conduction band states labelled jn and jp, M is the transition
Hamiltonian, H is the Heaviside step function delta, Ejn and
over quantum well allowed states. These are written in terms
of two functions θp and θn. Electron and hole populations nq
and pq in the wells are then given as follows in terms of the
barrier concentrations
(5)
(6)
nq = nbeθn
pq = pbeθp
The θ functions are as follows
θn = kT lnh 1
θp = kT lnh 1
L ( 2
NC
L ( 2
NV
)1/3 mnq
)1/3 mpq
mn PN
mp PN
jn=1 e(
jp=1 e(
Ecq −Ejn
KT
Ejp−Ejq
KT
)i
)i
where L is the quantum well width. mn,p are electron and hole
masses in the barrier and mnq,pq are the masses in the well.
These functions contain all information necessary about the
quantum wells with the sole exception of carrier lifetimes. We
note that they are symmetrical to the well photocurrent en-
hancement term of equation 2. Both involve a sum over well
states and the necessary information is the same as in equa-
tion 2 and reduces to band structure data about the well rela-
tive to the barriers. The functions will not be symmetrical for
electrons and holes because of different valence/conduction
offsets and effective masses.
The contributions from neutral layers are included in terms of
the ideal diode formalism The electron and hole Fermi-levels
are set equal to the valence and conduction band edges. The
depletion approximation is made with the result that photo-
generated carriers are omitted in the dark current calculation.
The dark current of the device in this picture is given by the
integral of the SRH recombination rate over the depletion re-
gion including p and n layer depletion layers if present, incre-
memented by the ideal diode contribution from the charge
neutral regions. An example SRH profile is shown in figure 2.
The quantum wells show are step-like peaks in the profile, and
clearly dominate the dark current of a QWSC.
Ejp are the energy levels of the initial and final quantum well
states.
The photocurrent Ji due to the QW at any λ is found by inte-
grating G across the QW layers and assuming 100% escape.
The QW spectral response is added on to that of the bulk
regions of the device calculated as in [2].
Figure 1 shows the calculated and measured QE for an Alx-
Ga1−xAs QWSC comprising 30 GaAs wells together with
the same for a control sample which is identical but with-
out wells. Under an standard AM1.5 spectrum the theoretical
short circuit current (Jsc) for this sample is 108Am−2 versus
116Am−2 calculated from the experimental SR. These results
agree with calibrated results from NREL to within 3% in the
worst case.
Fig. 1. Experimental and calculated SR of a 30well AlxGa1−xAs
sample with aluminium x = 30%
The SRH [9] recombination rate U (x) in the i region is given
by
U (x) =
τn(p + pt) + τp(n + nt)
pn − n2
i
(3)
where where pt and nt are hole and electron populations in
trap levels in the bandgap, p and n are hole and electron
populations in the valence and conduction bands and τp and
τn are their respective lifetimes.
Electron and hole populations in barrier regions of the intrinsic
region are expressed in terms of the intrinsic population ni,
Fermi levels Ef and the intrinsic energy Ei
KT (cid:17)
nb = nie(cid:16) Ef n−Ei
KT (cid:17)
pb = nie(cid:16) Ei−Ef p
(4)
where ni is given by the effective masses of electrons and
holes via the conduction and valence band effective densities
of states and the law of mass action in equilibrium, and for nb
the subscript b refers to barrier material.
It has been shown [8] that the variation in electron and hole
populations in well and barrier regions can be reduced to a
difference in effective mass within the parabolic band approx-
imation and a constant factor modifying the conduction and
valence band densities of states which is determined by a sum
Fig. 2. SRH recombination profile for the 30 well QWSC of figure
1 for a biasses 0.8V, 1.15 and 1.5V, showing different θn and θp
and the reduction of SCR width at high bias.
4 Experiment and Modelling
Samples were grown by MBE and MOVPE in the Centre for
Electronic Materials and Devices in Imperial College, Phillips
Laboratories (Redhill) and the Sheffield III-V Semiconductor
Facility. They take the form of p − i − n diodes. Structures
having GaAs wells in the i region will be referred to as QWSCs
and identical p − i − n structures of homogeneous composi-
tion grown in the same growth run are termed controls. The
experimental configuration has been described previously [2].
The fitting parameters for dark currents are the non radiative
lifetimes. Estimates for these are drawn from studies of barrier
and well controls which are GaAs/AlxGa1−xAs and GaAs
controls. These lifetimes are then applied to QWSC structures
and the resulting prediction compared with experiment.
Figure 3 shows modelled and calculated IV for GaAs and Alx-
Ga1−xAs controls. The upper curves shows a GaAs control.
The model shows SRH and ideal dark currents and their sum.
The onset of radiatively dominated behaviour is visible below
the built in voltage of 1.44V and is well described. The pa-
rameters for the ideal Shockley fit are the same as those used
for the SR leaving the non radiative lifetimes as the only pa-
rameters. They are chosen equal in this case. Making them
different shifts the SRH peak with position and changes the
ideality of the dark current in disagreement with experiment.
The lifetime of 10ns is in close agreement with lifetimes used
in previous work [8].
The lower curves shows similar data and theory for an Alx-
Ga1−xAs control with a much shorter SRH lifetime of 0.6ns.
Again this is in agreement with previous work by the same
factor in a different sample. Modelling an identical control with
aluminium mole fractions x = 20% yields a lifetime of 0.05ns.
Fig. 4. 30 well QWSC Al 20% (dashed line modified δEf see text)
Fig. 3. GaAs control dark current and lifetimes
Figures 4 and 5 show dark current modelling for 30 well MBE
grown QWSCs with Al composition of 20% and 33% and
with lifetimes derived from relevant controls assuming similar
material quality.
Figure 6 shows the same data for a 50 well QWSC with Al
fractions 33%. Fitting the data can again be achieved by re-
ducing the QFL separation by the same shift.
We have observed that experiment systematically records a
lower dark current than predicted by the control lifetimes. This
Fig. 5. 30 well QWSC Al 33% (dashed line modified δEf see text)
can be explained in a variety of ways by the model. Longer
lifetimes in the wells linearly decrease the dark current until the
well lifetime is much longer than in the barrier. However there
is no reason why the lifetimes in the QW should be greater
than in bulk material.
The approach we have investigated is the possibility of a lower
QFL separation δEf in the quantum wells. We find that a
narrowing of the QWFL separation in the wells by a factor
symmetrical for holes and electrons models all samples well, as
shown by the dashed lines in graphs 4 to 6 despite the fact that
the barrier bandgap varies significantly, and that one sample
has 50 wells.
This reaffirms work [10] on the QFL separation which was
found to be significantly smaller in SQW samples at 10meV
REFERENCES
[1] Barnham KWJ and Duggan G, A New Approach to
High Efficiency High-Bandgap Solar Cells, J. Appl.
Phys, 67 (7), 1990
[2] M.Paxman, J.Nelson, K.W.J.Barnham, B.Braun,
J.P.Connolly, C.Button, J.S.Roberts and C.T.Foxon
Modelling the Spectral Response of the Quantum
Well Solar Cell J.Appl.Phys. 74, 614 (1993).
[3] J.Barnes, J.Nelson, K.W.J.Barnham, J.S.Roberts,
M.A.Pate, S.S. Dosanjh, R.Grey, M.Masseur
and F.Ghiraldo, Characterisation of GaAs/InGaAs
quantum wells using photocurrent spectroscopy, J.
Appl. Phys. 79 7775-9 (1996)
[4] G. L. Araujo et al., Proc. 12th European
Photovoltaic Solar Energy Conference, pp. 1481-
1484 (1994)
[5] Keith Barnham, James Connolly, Paul Griffin, Guido
Haarpaintner, Jenny Nelson, Alexander Zachariou,
Jane Osborne voltage enhancement in Quantum
Well Solar Cells, J. apply. Phys 80 1201 (1996)
[6] Jenny
Nelson,
Benjamin
Kluftinger,
Ernest S.M.Tsui, Keith Barnham et al., Quasi-Fermi
Level Separation in Quantum Well Solar Cells, 13th
European Photovoltaic Energy Conference, Nice,
pp150 (1996)
[7] E.S.M Tsui, J.Nelson, K.W.J. Barnham, C.Button
and J.S.Roberts, Determination of the Quasi Fermi
level separation in single quantum well p-i-n diodes
J. Appl. Phys. 80 (7) (1996)
[8] Jenny Nelson, Ian Ballard, Keith Barnham, James P.
Connolly, Effect of quantum well location on single
quantum well p -- i -- n photodiode dark currents, J.
Appl. Phys, 86 (10), 1999
[9] Shockley, W. T. Read, and r. N. Hall, Phys. Rev.
Lett. 87, 835 (1952)
[10] Jenny Nelson, Jenny Barnes, Nicholas Ekins-Daukes,
Benjamin Kluftinger, Ernest Tsui and Keith barnham
Observation of suppressed radiative recombination
in single quantum well p − i − n photodiodes
J.Appl.Phys. 82, 6240 (1997).
Fig. 6. 50 well QWSC Al 33% (dashed line modified δEf see text)
5 Conclusions
The QWSC benefits from an increase in photogeneration in
the wells which is counterpointed by recombination in the
lower bandgap well regions. In order to study which effect is
greater we study photocurrent and dark current and express
the modifications to dark and photocurrent in terms of the
quantum well density of states. The photocurrent from the
wells is determined with no free parameters to good accuracy.
The dark current for the control homojunctions is well under-
stood. Modelling these gives us an estimate of carrier lifetimes
in the SCR, together with verifying the transport parameters
used in the QE calculation at the onset of ideal diode be-
haviour, if present.
The QWSC dark current depends on four lifetimes. We reduce
this to two by assuming that hole and electron non radiative
lifetimes are equal. In the absence of direct measurements
we derive the barrier lifetimes from controls with the barrier
composition. Similarly, controls with the well composition set
an upper limit on the well lifetimes employed.
We see a systematic overestimation of the dark current, in-
dicating that the well lifetimes in a QWSC system are longer
than expected by one order of magnitude to a first approxi-
mation. This can be explained in terms of longer well lifetimes
or a smaller QFL separation in the wells. This strongly sug-
gests that these structures have the potential to be efficient
photoconverters.
Finally we note that this formulation of the MQW dark current
problem shows shortcomings because of the approximations
made. This is particularly noticeable in the case of single well
samples. A full treatment needs a self consistent approach to
the Poisson equation.
This would be noticeable for single quantum well samples
where the position of the quantum wells and the background
doping is important. We note however that the treatment ap-
plies reliably to MQW systems studied here since dark current
is determined mainly by the balance between QW and barrier
material, in that on average the position of the wells is not
critical. This is borne out by the range of GaAs/AlxGa1−xAs
samples examined.
|
1106.2106 | 1 | 1106 | 2011-06-10T16:01:58 | Discrete-time quadrature feedback cooling of a radio-frequency mechanical resonator | [
"cond-mat.mes-hall"
] | We have employed a feedback cooling scheme, which combines high-frequency mixing with digital signal processing. The frequency and damping rate of a 2 MHz micromechanical resonator embedded in a dc SQUID are adjusted with the feedback, and active cooling to a temperature of 14.3 mK is demonstrated. This technique can be applied to GHz resonators and allows for flexible control strategies. | cond-mat.mes-hall | cond-mat |
Discrete-time quadrature feedback cooling of a radio-frequency mechanical resonator
M. Poot∗,1 S. Etaki,1, 2 H. Yamaguchi,2 and H. S. J. van der Zant1, †
1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan
(Dated: September 11, 2018)
We have employed a feedback cooling scheme, which combines high-frequency mixing with digital
signal processing. The frequency and damping rate of a 2 MHz micromechanical resonator embedded
in a dc SQUID are adjusted with the feedback, and active cooling to a temperature of 14.3 mK
is demonstrated. This technique can be applied to GHz resonators and allows for flexible control
strategies.
Mechanical systems in the quantum regime [1 -- 3] can
be used to answer fundamental questions about quantum
measurement, decoherence, and the validity of quantum
mechanics in macroscopic objects. This requires a me-
chanical resonator which is cooled to such a low tem-
perature that it is in its ground state for most of the
time.
In the past few years tremendous progress has
been made in actively cooling resonators [3], mainly by
using sideband cooling [2, 4, 5] and active feedback cool-
ing [6 -- 8]. The latter technique has mainly been applied
to low-frequency (kHz) resonators combined with opti-
cal detection. The largest cooling factors have been ob-
tained using velocity-proportional feedback, i.e., by feed-
ing back the differentiated displacement signal. However,
at higher frequencies, delays in the feedback system seri-
ously degrade the cooling performance. Here, we demon-
strate a feedback cooling technique [9] with a nearly un-
limited bandwidth, based on fast digital signal processing
(DSP) in combination with single-sideband mixing. A 2
MHz micromechanical resonator with inductive readout
is cooled to 14.3 mK using this scheme.
Figure 1a shows the device, which consists of a dc
SQUID with a part of its loop suspended. This forms a
50 µm long flexural resonator with its fundamental mode
around f0 ∼ 2 MHz. The chip is glued onto a piezo el-
ement for feedback and actuation, and cooled in a di-
lution refrigerator with a minimum bath temperature of
15 mK. By applying an in-plane magnetic field B (green),
a displacement of the beam u changes the amount of flux
through the dc SQUID loop. When a bias current IB
is applied, a change in flux results in a change in the
SQUID voltage V . This way, the dc SQUID is a sensi-
tive displacement detector [10]. In all measurements pre-
sented here, the same working point for the dc SQUID is
used, to avoid backaction-induced changes in frequency
and damping [11].
The thermal noise of the resonator is used to calibrate
the dc SQUID detector. Figure 1b shows the displace-
ment noise spectrum Suu measured at two different cryo-
stat temperatures T . The thermal motion of the res-
∗Present address: Department of Electrical Engineering, Yale Uni-
versity, New Haven, CT 06520, USA
†Electronic address: h.s.j.vanderzant@tudelft.nl
FIG. 1: (a) Schematic overview of the SQUID detector (red)
with the integrated flexural resonator. (b) Displacement noise
spectra without feedback. (c) The resonator temperature ex-
tracted from the thermal noise spectra plotted against the
mixing chamber temperature. (d) Generic linear system rep-
resentation [12] of feedback cooling. (e) The feedback filter
consists of a digital signal processor with a single-sideband
mixer at the input and output.
onator shows up as a peak on top of the imprecision
noise floor Sunun . The cryogenic-amplifier-limited dis-
placement noise is 2 fm/√Hz at T = 15 mK. The area
under the peak is the amplitude of the Brownian mo-
tion of the resonator squared. When the temperature of
the refrigerator is increased to T = 0.3 K, the spectrum
changes: Firstly, the noise floor is higher due to a de-
crease in the transduction, dV /du, as the critical current
decreases with increasing temperature [10]. Secondly, the
peak is higher and wider (the intrinsic damping rate γ0
increases with temperature), indicating that the thermal
motion is larger at higher temperatures. The resonator
temperature T0 = k0hu2i/kB (k0 = 110 N/m is the spring
constant) is plotted against T in Fig. 1c: It follows the
cryostat temperature for T > 50 mK (solid line) and sat-
urates below this value.
0 /(f 2
To further lower the resonator temperature, active
feedback is employed, where the displacement of the res-
onator is fed back to it to damp its thermal motion. Fig.
1d illustrates the generic process [3]: The thermal force
noise Fth ≡ k0fth drives the resonator whose response is
0 − f 2 + if γ0/2π). Note, that fth and the
HR = f 2
other signals are scaled to have the unit of position. The
force results in a displacement which is measured by the
dc SQUID detector, and imprecision noise un is added to
its output v. This signal is fed to the feedback filter with
transfer function Gf b. The actuation a is multiplied by
A, which consists of the SQUID transduction, an atten-
uation (-40 dB) and the piezo responsivity. Finally, the
resulting piezo displacement up exerts an inertial force on
the resonator. Note, that in practise crosstalk (X) exists
between the applied feedback and the detector output,
which modifies the system response.
To fully characterize the linear system an ac signal is
applied to a (see Fig. 1d) and the response at v is mea-
sured at the same frequency, while sweeping the driving
frequency across the resonance.
In this case, the feed-
back Gf b is disabled. From this network-analyzer mea-
surements the elements A = 1.94· 10−4 exp(−0.73i), and
X = 0.26 exp(2.56i) of the linear systems are obtained as
well as the parameters of HR: f0 and γ0. The non-zero
phase of A is due to the time it takes for the signal to
travel through the whole system. If an analog differentia-
tor would be used for Gf b, this delay causes the feedback
to not be purely velocity proportional thus degrading the
cooling performance. The DSP-based feedback presented
here can compensate for this effect as demonstrated be-
low.
Our implementation of the feedback filter Gf b is shown
in Fig. 1e. The high-frequency input signal v is split
and both branches are mixed with local oscillator (LO)
signals with a 90o phase difference between them. This
IQ mixer gives both quadratures vs and vc of the input
signal. The LO frequency is fLO = 2.0492 MHz so the
down-mixed signals oscillate at fR−fLO = 8.9 kHz. They
are digitized and the DSP (Adwin Pro II at a sampling
rate fs = 820 kS/s) applies the following transformation
to the input signals to generate two output signals ac and
as:
2
tures do not change faster than the sampling rate, which
is equivalent to γR/2π . fs/2. The operation is thus not
limited to resonators with frequencies within the band-
width of the DSP, allowing feedback cooling of radio and
microwave frequency resonators. Note, that the impreci-
sion noise floor is still determined by the cryogenic ampli-
fier; the contributions from the mixers and discretization
are negligible.
f /2 =
0 π
2 138 424 Hz
18 Hz
36 Hz
γ π0/2 = 88 Hz
T = 37 mK
0T = 3
0
0
π
2π
θfb
FIG. 2: Feedback phase dependence of the resonator fre-
quency (a), damping rate (b), and resonator temperature (c)
for gf b = 0.1. The dashed lines indicate their measured val-
ues in the absence of feedback, (f0, γ0, and T0 resp.); the
solid line is the phase dependence calculated using indepen-
dent measurements.
The feedback modifies the resonator response from HR
to its closed-loop form H ′
R [3]:
as (cid:19) = gf b(cid:18) cos θf b − sin θf b
(cid:18) ac
cos θf b (cid:19)(cid:18) vc
vs (cid:19)
sin θf b
(1)
H ′
R =
These quadratures are then up-converted by the LO fre-
quency with a second IQ mixer. The final result is a
signal a at the original frequency that is phase-shifted by
the feedback phase θf b and multiplied by the feedback
gain gf b, i.e. Gf b = gf b exp(iθf b). The only frequency
requirement for this mixing scheme is that the quadra-
f b = g′
where G′
f b) = Gf b/(1 − XGf b) is the
feedback filter modified by the crosstalk. The real part
of G′
f bA modifies the resonance frequency from f0 to
fR ≈ f0(1 − Re[G′
f bA]/2), whereas the imaginary part
changes the damping from γ0 to γR ≈ γ0−2πf0Im[G′
f bA].
Both the frequency shift and the change in damping de-
f 2
0
0 − f 2 + if γ0/2π − f 2
f 2
f b exp(iθ′
,
(2)
0 G′
f bA
pend periodically on the phase of G′
f bA and the maxi-
mum frequency shift is half the maximum damping rate
change.
In order to achieve optimal cooling the feedback phase
is varied for a fixed feedback gain as shown in Fig. 2.
The feedback gain is chosen sufficiently small so that
G′
f b ≈ Gf b. At every point the thermal noise spectra are
measured and fitted to obtain the resonance frequency
(top), the damping rate (center), and the resonator tem-
perature (bottom). The resonance frequency and damp-
ing rate show the expected sinusoidal dependence on the
feedback phase. The amplitude of the frequency shift is
half of that of the change in damping, consistent with the
discussion above. The phase where the damping is max-
imized, coincides with the lowest resonator temperature
and zero frequency shift. At this phase the system delay
is compensated and a pure velocity-proportional feedback
is applied to the resonator (i.e. ∠AGf b = −π/2). The
phase dependencies can also be calculated without any
free parameters by using the values from the network
characterization (Fig. 1d). Figure 2 show that these are
in good agreement with the feedback results.
)
r
s
m
V
m
(
n
o
i
t
a
u
t
c
a
100
10
1
0.1
Full bandwidth
Δf = 50 kHz
Δf = 10 kHz
0.01
0.0
0.5
g
fb
1.0
fb
θ = 1.69 π
Δf =
10 kHz
fb
3
To further cool the resonator, the feedback gain is in-
creased at the optimal phase as indicated in Fig. 3. First
the resonator temperature decreases rapidly with increas-
ing gain due to the increased damping rate. However, by
increasing the gain further, more of the imprecision noise
un is fed back as force noise. This causes a steady in-
crease in TR for large gf b. The minimum temperature
that can be reached is set by Sunun and the solid line
shows the predicted curve for velocity-proportional feed-
back [7, 13] calculated with the experimental parame-
ters. The achieved minimum of 14.3 mK is close to the
predicted lowest temperature of 14.0 mK. Note, that a
temperature of 14.3 mK corresponds to an average ther-
mal phonon occupation of ¯n ≈ kBTR/hfR = 138 for a
2 MHz resonator. The heterodyne DSP-based technique
employed in this work thus successfully reaches the low-
est temperature possible for the standard fully-analog ap-
proach, but now applied to a high-frequency resonator.
Another advantage of DSP-based feedback is that the
transformation of vs and vc to ac and as can be designed
with almost arbitrary transfer characteristics, allowing
implementation of optimal control strategies [14]. In the
measurements in Fig. 3, the input signal is digitally fil-
tered using a Fourier transform filter which is centered
around f0 and a tunable filter bandwidth ∆f . The fil-
ter reduces the bandwidth of the feedback which pre-
vents excess signal output outside the resonator band-
width that may overload the detector or the amplifiers.
The inset of Fig. 3 shows the root-mean-square output
voltage as a function of gf b for three values of ∆f . For
the full bandwidth (fs/2 = 410 kHz) an instability oc-
curs around gf b = 0.23, which affects the cooling. The
10 kHz bandwidth, which is used for the cooling curve
of Fig. 3, has two orders of magnitude less actuation
compared to the full bandwidth, enabling efficient cool-
ing without affecting the closed-loop response as long as
∆f ≫ γR/2π. This again illustrates the versatility of our
digital quadrature feedback cooling platform.
FIG. 3: Resonator temperature as a function of feedback gain,
showing both the feedback measurements (symbols) and cal-
culations for pure velocity-proportional feedback (solid line).
The inset shows the root-mean-squared value of the actuation
signal (pha2
si) as a function of gain for different filter
bandwidths.
ci + ha2
We thank Hidde Westra, Khasahir Babei Gavan, Abah
Obinna and Joris van der Spek for their help with the
measurements. This work was supported in part by
FOM, NWO (VICI grant), NanoNed, a EU FP7 STREP
project (QNEMS), and JSPS KAKENHI (20246064 and
23241046).
[1] A. D. O'Connell, M. Hofheinz, M. Ansmann, R. C. Bial-
czak, M. Lenander, E. Lucero, M. Neeley, D. Sank,
H. Wang, M. Weides, et al., Quantum ground state and
single-phonon control of a mechanical resonator , Nature
464, 697 (2010).
[2] J. D. Teufel, T. Donner, D. Li, J. H. Harlow, M. S. All-
man, K. Cicak, A. J. Sirois, J. D. Whittaker, K. W.
Lehnert, and R. W. Simmonds, Sideband cooling mi-
cromechanical motion to the quantum ground state,
arXiv:1103.2144v1 (2011).
[3] M. Poot and H. S. J. van der Zant, Mechanical systems
in the quantum regime, Phys. Rep., submitted (2011).
[4] O. Arcizet, P.-F. Cohadon, T. Briant, M. Pinard, and
A. Heidmann, Radiation-pressure cooling and optome-
chanical instability of a micromirror , Nature 444, 71
(2006).
[5] T. Rocheleau, T. Ndukum, C. Macklin, J. B. Hertzberg,
A. A. Clerk, and K. C. Schwab, Preparation and detec-
tion of a mechanical resonator near the ground state of
motion, Nature 463, 72 (2010).
[6] D. Kleckner and D. Bouwmeester, Sub-kelvin optical cool-
ing of a micromechanical resonator , Nature 444, 75
(2006).
[7] M. Poggio, C. L. Degen, H. J. Mamin, and D. Rugar,
Feedback Cooling of a Cantilever's Fundamental Mode be-
low 5 mK , Phys. Rev. Lett. 99, 017201 (pages 4) (2007).
[8] B. A. et al., Observation of a kilogram-scale oscillator
near its quantum ground state, New J. Phys. 11, 073032
(2009).
[9] T. E. Kriewall, J. L. Garbini, J. A. Sidles, and J. P.
Jacky, Heterodyne Digital Control of a High-Frequency
Micromechanical Oscillator , Journal of Dynamic Sys-
tems, Measurement, and Control 128, 577 (2006).
[10] S. Etaki, M. Poot, I. Mahboob, K. Onomitsu, H. Yam-
aguchi, and H. S. J. van der Zant, Motion detection of
4
a micromechanical resonator embedded in a d.c. SQUID,
Nat Phys 4, 785 (2008).
[11] M. Poot, S. Etaki, I. Mahboob, K. Onomitsu, H. Yam-
aguchi, Y. M. Blanter, and H. S. J. van der Zant, Tunable
Backaction of a DC SQUID on an Integrated Microme-
chanical Resonator , Phys. Rev. Lett. 105, 207203 (2010).
[12] A. V. Oppenheim, A. S. Willsky, and S. Hamid, Signals
and Systems, Prentice Hall signal processing series (Pren-
tice Hall, Englewood Cliffs, NJ, 1997), 2nd ed.
[13] K. H. Lee, T. G. McRae, G. I. Harris, J. Knittel, and
W. P. Bowen, Cooling and Control of a Cavity Opto-
electromechanical System, Phys. Rev. Lett. 104, 123604
(2010).
[14] K. J. Bruland, J. L. Garbini, W. M. Dougherty, and J. A.
Sidles, Optimal control of force microscope cantilevers. II.
Magnetic coupling implementation, J. Appl. Phys. 80,
1959 (1996).
|
1901.06973 | 1 | 1901 | 2019-01-21T15:48:19 | Coherent anti-Stokes Raman Spectroscopy of single and multi-layer graphene | [
"cond-mat.mes-hall",
"physics.optics"
] | We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the temporal overlap of the laser excitation pulses, suppressing the NVRB. We model the observed spectra, taking into account the electronically resonant nature of both CARS and NVRB. We show that CARS can be used for graphene imaging with vibrational sensitivity. | cond-mat.mes-hall | cond-mat | Coherent anti-Stokes Raman Spectroscopy of single and multi-layer graphene
A. Virga1,2,∗, C. Ferrante3,1,∗,†, G. Batignani1, D. De Fazio4,
A. D. G. Nunn2, A. C. Ferrari4, G. Cerullo5, T. Scopigno1,3,‡
1Dipartimento di Fisica, Universit´a di Roma "La Sapienza", I-00185, Roma, Italy
2Istituto Italiano di Tecnologia, Center for Life Nano Science @Sapienza, Roma, I-00161, Italy
3Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy
5IFN-CNR, Dipartimento di Fisica, Politecnico di Milano, P.zza L. da Vinci 32, 20133 Milano, Italy
4Cambridge Graphene Centre, Cambridge University,
9 JJ Thomson Avenue, Cambridge CB3 OFA, UK
∗These authors contributed equally to this work
†carino.ferrante@iit.it and
‡tullio.scopigno@roma1.infn.it
We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer
graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the
third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which
obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be
measured by reducing the temporal overlap of the laser excitation pulses, suppressing the NVRB.
We model the observed spectra, taking into account the electronically resonant nature of both CARS
and NVRB. We show that CARS can be used for graphene imaging with vibrational sensitivity.
Single-layer graphene (SLG) has a high nonlinear
χ(3) ∼ 10−10 e.s.u for har-
third-order susceptibility:
monic generation[1] and χ(3) ∼ 10−7 e.s.u.
for fre-
quency mixing[2], where one electrostatic unit of charge
(1 e.s.u), in standard units (SI) is[3]: χ(3)(SI)/χ(3)(e.s.u.)
= 4π/(3× 104)2. This is up to seven orders of magnitude
greater than those of dielectric materials such as silica
(χ(3) = 1.4×10−14 e.s.u[4]). This property is due to opti-
cal resonance with interband electronic transitions[5] and
has led to the observation of gate-tunable third-harmonic
generation[1] and nonlinear four-wave mixing[2, 6, 7]
(FWM, i.e. the third-order processes whereby an elec-
tromagnetic field is emitted by the nonlinear polariza-
tion induced by three field-matter interactions[3]). FWM
can be exploited for for graphene imaging, with an im-
age contrast of up to seven orders of magnitude[2] higher
than that of optical reflection microscopy[8]. However,
FWM-based imaging reported to date in graphene[2]
lacks chemical selectivity and does not provide the same
wealth of information brought about by the vibrational
sensitivity of Raman spectroscopy[9, 10].
Coherent anti-Stokes Raman scattering (CARS)[11 --
14] is a FWM process that exploits the nonlinear interac-
tion of two laser beams, the pump field EP at frequency
ωP and the Stokes field ES at frequency ωS < ωP , to ac-
cess the vibrational properties of a material. As shown in
Fig.1a, when the energy difference between the two pho-
tons matches a phonon energy (ωP −ωS = ωv), the in-
teraction of the laser pulses and the sample results in the
generation of vibrational coherences[4]. While sponta-
neous Raman (SR) scattering is an incoherent signal[15],
since the phases of the electromagnetic fields emitted
by individual scatterers are uncorrelated[15], in CARS,
atomic vibrations are coherently stimulated, i.e. atoms
oscillate with the same phase[4], potentially leading to
a signal enhancement of several orders of magnitude de-
pending on incident power and scatterer density[16, 17].
The same combination of optical fields used for CARS
can generate another FWM signal, a non-vibrationally
resonant background (NVRB)[2], Fig.1b.
In both pro-
cesses, the optical response consists of a field emitted at
the anti-Stokes frequency ωas = 2ωP − ωs[4]. However,
the interference of the two effects usually generates an
an additional contribution which is dispersive with re-
spect to the emitted optical frequency, i.e. shaped as the
first derivative of a peaked function (resembling the real
part of the refractive index around a resonance), which
introduces an asymmetric distortion of the Raman peak
profile in the region ωas = ωP + ωv [18].
In the biological field[16, 19], a wealth of studies has
demonstrated the potential of CARS for fast imaging[16,
low as∼
17, 20], with pixel acquisition times as
0.16µs[19], thus allowing for video-rate microscopy[19].
By contrast, there are only a few reports to date of CARS
imaging of micro-structured materials (such as polyethy-
lene blend[21], multicomponent polymers[22], cholesterol
micro-crystals[23]) and nano-structured ones (patterned
gold surfaces[24], single wall nanotubes[25, 26], highly
oriented pyrolytic graphite[27]). Such studies, performed
with pixel acquisition times down to∼ 2µs[28], have
shown the ability of CARS to identify chemical hetero-
geneities on sub-micrometer scales and characterize sin-
gle particles that are part of a larger domain, enabling
e.g. to visualize microscopic domains (polystyrene, poly-
methyl methacrylate, and poly-ethylene terephthalate)
in the case of the above mentioned polymer mixtures[29],
or to provide detailed maps of microcrystal orientation
in organic matrices (e.g. cholesterols in atherosclerotic
plaques[23]).
In graphene, despite the large χ(3)[1, 2], no CARS peak
9
1
0
2
n
a
J
1
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
3
7
9
6
0
.
1
0
9
1
:
v
i
X
r
a
2
NVRB under electronically resonant conditions, which
allows vibrational imaging with signal levels as large as
those of the third-order nonlinear response.
SLG is grown on a 35µm copper (Cu) foil, follow-
ing the process described in Ref.33. The substrate is
heated up to 1000◦C and annealed in hydrogen atmo-
sphere (H2, 20 sccm) for 30 minutes at ∼200 mTorr.
Then, 5 sccm of methane (CH4) are let into the cham-
ber for the following 30 minutes to enable growth[33, 34].
The sample is then cooled back to room temperature in
vacuum (∼1 mTorr) and unloaded from the chamber.
SLG is subsequently transferred on a glass substrate by
a wet method. Poly-methyl methacrylate (PMMA) is
spin coated on the SLG/Cu and floated on a solution of
ammonium persulfate (APS) and deionized water. When
Cu is etched[34, 35], the PMMA membrane with attached
SLG is then moved to a beaker with deionized water for
cleaning APS residuals. The membrane is subsequently
lifted with the target substrate. After drying, PMMA is
removed in acetone leaving SLG on glass. SLG is char-
acterized by SR after transfer using a Renishaw InVia
spectrometer at 514nm. The position of the G peak,
Pos(G), is∼1582cm−1, while FWHM(G)∼14cm−1. The
2D to G peak area ratio is∼5.3, indicating a p-doping af-
ter transfer∼250meV[36, 37], which corresponds to a car-
rier concentration∼5·1012cm−2. FLG flakes are produced
by micromechanical cleavage from bulk graphite[38]. The
bulk crystal is exfoliated on Nitto Denko tape. The FLG
G peak is∼1580cm−1. The D peak is negligible. The 2D
peak shape indicates this is Bernal stacked FLG[9, 10].
For CARS experiments, we use a two-modules Toptica
FemtoFiber Pro source, with two Erbium-Doped fiber
amplifiers (EDFA) at∼ 1550nm generating 90fs pulses
at 40MHz, seeded by a common mode-locked Er:fiber
oscillator[39], Fig.2. In the first branch (FemtoFiber pro
NIR), 1ps pulses at 784nm (pump pulse, PP) are pro-
duced by second-harmonic spectral compression[40] in a
1cm Periodically Poled Lithium Niobate (PPLN) crys-
tal. In the second branch (FemtoFiber pro TNIR), the
amplified laser passes through a nonlinear fiber (NLF),
wherein a supercontinuum (SC) output is generated. The
SC spectral intensity can be tuned with a motorized Si-
prism-pair compressor. A PPLN crystal with a fan-out
grating (a poling period changing along the transverse
direction) is exploited to produce broadly tunable (from
840 to 1100nm) narrowband 1ps Stokes pulses (SP), with
a power< 10mW. A dichroic mirror (DM) is used to
combine the two beams, whose relative temporal delay
is tuned with an optical delay line (DL). A long-working
distance 20x objective (O, numerical aperture NA=0.4)
focuses the pulses onto the sample (S). The generated
and transmitted light is collected by a condenser (C) and
the PP and SP are filtered out by a short-pass filter (F).
The total FWM signal is collected with an optical mul-
tichannel analyser (OMA, Photon Control SPM-002-E).
A dichroic mirror reflects the SP in order to measure its
Figure 1. Schematic of CARS and NRVB third-order non-
linear processes.
Interaction with pulses ωP , ωS, results in
blue-shifted a) CARS and b) NVRB contributions at ωas =
2ωP − ωS. Since in CARS a vibrational coherence is stim-
ulated by two consecutive interactions with the pump and
Stokes fields, their frequency difference must correspond to
a Raman active mode, ωP − ωS = ωv. c,d) Constraints for
the temporal sequence of the field-matter interactions (repre-
sented by circles at the top of the pulse envelopes), for CARS
and NVRB. In NVRB, the 3 interactions generating the χ(3)
signal happen within the few fs electronic dephasing time[15].
In CARS, the third interaction can occur over the much longer
vibrational dephasing time (a few ps)[15], within the pump
pulse (PP) temporal envelope.
profiles, equivalent to those measured in SR, have been
observed to date, to the best of our knowledge. We re-
ported SR with single-color pulsed excitation[30], using
the same picosecond lasers usually adopted for CARS[19].
However, in order to measure CARS, a combination of
pulses with different colors must be adopted[31]. By
scanning the pulse frequency detuning in a two-color ex-
periment, a dip has been observed in the third order
nonlinear spectral response of SLG at the G phonon fre-
quency. This was interpreted as an anomalous antires-
onance and phenomenologically described in terms of a
Fano lineshape[32].
Here we use two 1ps pulses (see inset of Fig.2) to ex-
plore FWM in SLG and few-layer graphene (FLG). We
experimentally demonstrate and theoretically describe
how the inter-pulse delay, ∆T (Figs.1c-d) can be used to
modify the relative weight of CARS and NVRB compo-
nents that simultaneously contribute to the FWM, thus
recovering the G-band Raman peak profile. We show
that the dip in the nonlinear optical response around the
vibrational resonance is due to the interplay of CARS and
3
intensity (Is) with a powermeter (P). FWM spectra are
obtained by scanning ωS around ωP −ωv (at fixed ωP ) to
probe the G-band phonon frequency, ωv = ωG. Fig.3 dis-
plays the FWM intensity, normalized to Is, for different
∆T .
In both SLG and FLG measurements, for ∆T shorter
than the vibrational dephasing time τ ∼1ps[41], i.e. the
characteristic time of coherence loss[15], a Lorentzian dip
at ωas = ωP + ωG appears on top of a background[32].
For ∆T > 2ps, while the total FWM signal decreases by
nearly two orders of magnitude, the dip observed in FLG
at ∆T ∼ 0ps evolves into a Raman peak shape at the
G-phonon energy. No dispersive features are observed at
any ∆T , unlike what normally expected for the interfer-
ence between NVRB and CARS[18]. Here we use pulses
with duration δt ∼ 1ps since this allows us to scan the
inter-pulse delay across the vibrational dephasing time τ
to suppress the NVRB cross section more than the vibra-
tional contribution, while minimizing the spectral broad-
ening due to the finite pulse duration 1/δt (cid:39)15cm−1 [15].
Since both CARS and NVRB signals depend quadrat-
ically on the number of scatterers[29], the SLG signal
intensity is significantly reduced with respect to FLG
(Fig.3), with a lower signal-to-noise ratio, hampering the
detection of peak-shaped vibrational resonances expected
for ∆T > 1.4ps.
The data in Fig.3 can be qualitatively understood as
follows. The anti-Stokes signal, I(ωas), generated by
CARS and NVRB, is proportional to the square modulus
of the electric field emitted by the third-order polariza-
tion, P (3)[4], as:
I(ωas) ∝ P (3)
CARS(ωas) + P (3)
N V RB(ωas)2.
(1)
P E∗
CARS and NVRB signals are simultaneously generated
by two light-matter interactions with the PP and a sin-
gle interaction with the SP, with different time order-
ing, Figs.1a-b. Consequently, P (3) ∝ E2
S, where *
indicates the complex conjugate. However, the temporal
constraints for such interactions are significantly differ-
ent for the two cases. As shown in Figs.1c-d, in the case
of NVRB the three interactions must take place within
the dephasing time of the involved electronic excitation,
which in SLG is∼10fs[42, 43], i.e. much shorter than the
pulses duration (δt ∼1ps). Hence, P (3)
N V RB(ωas) is only
generated during the temporal overlap between the two
pulses P (3)
S(t) (the three field inter-
actions, in a representative NVRB event, are indicated
by three nearly coincident dots in Fig.1d). In CARS, the
electronic dephasing time only constrains the lag between
the first two interactions that generate the vibrational
coherence (the two stimulating-field interactions are rep-
resented by the two nearly coincident dots in Fig.1c).
This can be read out by the third field interaction within
the phonon dephasing time, τ ∼ 1ps[41] (indicated,
for a representative CARS event, by the third dot in
P (t− ∆T )E∗
N V RB ∝ E2
Figure 2. CARS setup. EDFA, erbium-doped fiber ampli-
fied; NLF, nonlinear fiber for SC generation; DL, delay line;
DM, dichroic mirror; O, objective; S, sample; C, condenser;
P, powermeter; F, filter; OMA, optical multichannel analyzer.
Purple, green, and red lines represent the beam pathways of
1550nm, 784 nm (PP) and tunable SP. The second harmonic
autocorrelation of PP (green line) and SP (red line) are re-
ported in the inset. The black dashed line simulates the au-
tocorrelation obtained by using the profile from the best fit
(colored dashed lines) in Fig.3.
Figure 3. CARS spectra of (a) FLG and (b) SLG as a function
of Raman shift (ν − νP ) at different ∆T between the beams
at tunable ωS and fixed ωP .
In (a), colored dashed lines
are fits to the data using Eq.1 and the nonlinear polarization
obtained from Eqs.19-20. Vertical black dashed lines indicate
three energies (ν1,2,3 − νP = 1545, 1576, 1607 cm−1), taken
as reference for the FLG CARS images in Fig.5.
155016001650Raman Shift (cm-1)100101102I (arb.units)FLGa)155016001650Raman Shift (cm-1)100I (arb.units)SLGb)0.00 ps1.07 ps1.74 ps2.08 ps2.41 ps1.41 ps2.75 ps0.00 ps0.40 ps0.60 ps0.80 ps1.01 ps1.21 ps1.41 ps S(t)(cid:82) t
CARS ∝ EP (t − ∆T )E∗
−∞ EP (t(cid:48) −
Fig.1d). Thus, P (3)
∆T )e−t(cid:48)/τ dt(cid:48)[44]. Therefore, ∆T can be used to control
the relative weights of P (3)
N V RB[17, 44 -- 48].
For positive time delays within a few τ , P (3)
is progressively enhanced, as shown in Fig.4a,b,c.
CARS and P (3)
CARS/P (3)
N V RB
The system response can be evaluated through a
density-matrix description of P (3)(ω, ∆T )[15].
In the
presence of a temporal delay between PP and SP,
4
their electric fields can be written as[3]: EP (t, ∆T ) =
AP (t, ∆T )e−iωP t and ES(t, 0) = AS(t, 0)e−iωS t, where
AP/S(t, ∆T ) indicates the PP/SP temporal envelope. By
Fourier transform, the fields can be expressed in the fre-
−∞ EP (t, ∆T )eiωtdt
−∞ ES(t, 0)eiωtdt, which can be used
quency domain as: EP (ω, ∆T ) = (cid:82) +∞
and ES(ω, 0) = (cid:82) +∞
to calculate P (3)
CARS(ω, ∆T ) as[15, 49]:
(cid:90) ∞
(cid:90) ∞
CARS(ω, ∆T ) ∝ −ηCARS
P (3)
(cid:90) ∞
dω3
−∞
dω2
−∞
−∞
AP (ω3, ∆T ) AP (ω1, ∆T ) A∗
S(ω2, 0)δ(ω − 2ωP + ωS − ω3 − ω1 + ω2)
dω1
(ωP + ω3 − ¯ωba) (ωP − ωS + ω3 − ω2 − ¯ωca) (2ωP − ωS + ω3 − ω2 + ω1 − ¯ωda)
(2)
where ηCARS = nCARSµbaµcbµcdµad, µij is the transi-
tion dipole moment between the i and j states, nCARS is
the number of scatterers involved in the CARS process,
¯ωij = ωij − iγij = ωi − ωj − iγij, ωij = ωi − ωj is the en-
ergy difference between the levels i and j, and γij = τ−1
is the dephasing rate of the i(cid:105)(cid:104)j coherence[15]; a and c
denote the vibrational ground state g, 0(cid:105), and the first
vibrational excited level, g, 1(cid:105), with respect to the elec-
tronic ground state g(cid:105) (π band). In our experiments, c
corresponds to the G phonon at q ∼ 0, b and d indicate
the vibrational ground state, e, 0(cid:105), and the first vibra-
tional excited level, e, 1(cid:105), with respect to the excited
electronic state e(cid:105) (π∗ band).
ij
Using the conservation of energy represented by the
δ-distribution in Eq.2 and integrating over ω2, we get:
CARS(ω, ∆T ) ∝ −ηCARS
P (3)
AP (ω3, ∆T ) AP (ω1, ∆T ) A∗
(cid:90) ∞
(cid:90) ∞
S(2ωP − ωS − ω + ω3 + ω1, 0)
−∞
−∞
dω1
dω3
(ωP + ω3 − ¯ωba) (ω − ωP − ω1 − ¯ωca) (ω − ¯ωda)
(3)
Defining ν = ω/(2πc), the third-order nonlinear polariza-
tion can be expressed as a function of the Raman shift
(ν − νP ) as P (3)(ω, ∆T ) = P (3)(2πcν, ∆T ).
The ωca level in the denominator of Eq.3 is the fre-
quency of the Raman mode coherently stimulated in
CARS, while ωba and ωda are frequency differences be-
tween the electronic levels.
In the case of real levels,
resonance enhancement occurs[15]. In view of the opti-
cal nature of the involved phonons (q ∼ 0), and due to
momentum conservation, only one electronic level must
be included in the calculation and, consequently, the non-
linear response can be derived for ωba = ωdc = ωP . In a
similar manner, P (3)
N V RB can be expressed as[15]:
N V RB(ω, ∆T ) ∝ −ηNVRB
P (3)
AP (ω1, ∆T ) AP (ω2, ∆T ) A∗
(cid:90) ∞
(cid:90) ∞
S(2ωP − ωS − ω + ω1 + ω2, 0)
−∞
−∞
dω1
dω2
(ωP + ω1 − ¯ωea) (2ωP + ω1 + ω2 − ¯ωea) (ω − ¯ωea)
(4)
where ηNVRB = nNVRBµea4, nNVRB is the number
of scatterers involved in the NVRB process, and ωea is
the energy of the electronic excited level involved in the
NVRB process. Since the cross section of third-order
nonlinear processes in graphene is enhanced by increasing
the photon energy[50, 51], we consider only the dominant
case, i.e., νea = 2νP .
We describe the spectral FWM response assuming
monochromatic fields with no inter-pulse delay: EP (ω) =
EP · δ(ω − ωP ), ES(ω) = ES · δ(ω − ωS). From Eqs.3,4,
the CARS and NVRB nonlinear polarizations can be ex-
pressed as[4, 15]:
CARS(ω) ∝ −
P (3)
= χ(3)
(ωP − ¯ωba)(ω − ωP − ¯ωca)(ω − ¯ωda)
CARSE2
ηCARSE2
P E∗
P E∗
=
S
S
N V RB(ω) ∝ −
P (3)
= χ(3)
(ωP − ¯ωea)(2ωP − ¯ωea)(ω − ¯ωea)
N V RBE2
P E∗
S
ηN V RBE2
P E∗
S
(5)
=
(6)
which can be used to calculate the total FWM spectrum
according to Eq.1. Fig.4a plots the electronically non-
resonant case. The CARS polarization, defined by Eq.5,
is a complex quantity: the real part has a dispersive line-
shape, while the imaginary part peaks at the phonon fre-
quency ωca. The NVRB polarization, defined by Eq.6, is
5
Figure 4. CARS and NVRB spectral profiles for (a,b,c) electronically non-resonant and (d,e,f) resonant regimes, as derived from
Eqs.5,6, considering τba = τda = τea = 10fs[43], γca = F W HM (G)/2 = 6cm−1[41]. (a,c) Normalized (cid:60)(P (3)
CARS)
and (cid:60)(P (3)
In (c,e),
selected spectra corresponding to three ηNVRB/ηCARS from the colormap are reported.
N V RB). Colormaps in (b,e) generalize (a,c) for different ηNVRB/ηCARS, as for Eq.7 and 8.
N V RB), (cid:61)(P (3)
CARS), (cid:61)(P (3)
a positive real quantity. Accordingly, the FWM spectrum
in the electronically non-resonant condition, I(ωas)N R,
can be written as[15]:
I(ωas)N R ∼ P (3)
∝ χ(3)
CARS2 + 2(cid:60)(P (3)
CARS2 + 2(cid:60)(χ(3)
N V RB2 + P (3)
N V RB2 + χ(3)
N V RB)(cid:60)(P (3)
CARS)
N V RB)(cid:60)(χ(3)
CARS)
(7)
and it can be significantly distorted by the third term
in Eq.7 depending on the relative weight of the two cor-
responding susceptibilities. The maximum of the signal,
when the dispersive contribution is dominant, can be fre-
quency shifted from the phonon frequency. This is the
most common scenario, in which the dispersive lineshapes
hampering a direct access to the vibrational characteri-
zation of the sample in terms of phonon frequencies and
lifetimes. Such limitation is particularly severe when
χ(3)
N RV B is comparable to χ(3)
CARS and the NVRB and
CARS contributions have the same order of magnitude.
This condition is common in the case of a weak vibra-
tional resonant contribution ( µbaµcbµcdµad
<< 1), as in
the case of low concentrations of oscillators (
µea4
nCARS
nNVRB
<<
1). Hence, this produces an intense NVRB signal and
reduces the vibrational contrast, hindering the imaging
of electronically non-resonant samples. This is the case
for cells and tissues which need to be excited in the near
infrared to avoid radiation damage[52].
For SLG, the linear dispersion of the massless Dirac
Fermions makes the response always electronically res-
onant.
In the case of FLG, absorption has a com-
plex dependence on wavelength, as well as on the num-
ber of layers and their relative orientation, exhibiting,
for instance, a tunable band gap in twisted bilayer
graphene[53]. This is also reflected in the resonant na-
ture of SR[54, 55]. However, approaching visible wave-
lengths, the absorption spectrum flattens above∼ 0.8eV
and it is ∼ (1 − πe2/2h)N for Bernal-stacked N -layer
graphene[56]. Our exfoliated FLG are Bernal stacked,
as also confirmed by the measured SR 2D peak shape in
SR[9, 10]. Accordingly, at the typical CARS wavelengths
used here (784 and 894nm), SLG and Bernal FLG are
electronically resonant, unlike the situation for most bio-
logical samples[52]. This results in an opposite sign in the
CARS response, i.e. a spectral dip in (cid:61)(χ(3)
CARS), related
to two additional imaginary unit contributions in the de-
nominator of Eq.5, (ωP − ¯ωba) and (ω− ¯ωda), wherein the
iγba, iγda components dominate. Further, the −i contri-
bution from (2ωP − ¯ωea) results in a NVRB dominated
by the imaginary part, as illustrated in Fig.4c,d,e.
matter interactions (NVRB and CARS) rather than from
a matter-only Hamiltonian coupling the electronic con-
tinuum and a discrete phonon state (implying a reso-
nance between the corresponding energies), resulting in
the Fano resonance[57] suggested in Ref.[32].
6
Thus, the third term in Eq.7 must be replaced with
the contribution from the interference of the spectral dip
CARS) with the imaginary part (cid:61)(χ(3)
(cid:61)(χ(3)
N V RB). This
leads to a signal that, under the electronically resonant
regime, becomes[15]:
I(ωas)R ∼ P (3)
∝ χ(3)
CARS2 + 2(cid:61)(P (3)
CARS2 + 2(cid:61)(χ(3)
N V RB2 + P (3)
N V RB2 + χ(3)
N V RB)(cid:61)(P (3)
N V RB)(cid:61)(χ(3)
CARS)
CARS)
(8)
CARS/χ(3)
which indicates that the total FWM, at the phonon fre-
quency, can be either a negative dip or a positive peak de-
pending on the ratio between the vibrationally resonant
and the non-resonant susceptibilities (χ(3)
N V RB),
which depends only on the material under examination
and not on the pulses used in the experiment. Such
a qualitatively different interplay between NVRB and
CARS, compared with the experimental lineshapes for
∆T = 0 in Fig.3, unambiguously indicates the presence
of electronic resonance in SLG and Bernal FLG. For a
given material, the relative weight of the two FWM con-
tributions can be in general modified by using pulsed
excitation and tuning the temporal overlap between the
PP and SP fields[44], i.e. changing ∆T . The experimen-
tally observed evolution of the FWM signal in FLG as
a function of PP-SP delay in Fig.3 has a trend similar
to that shown in Fig.4e,f as function of ηN RV B/ηCARS,
validating the resonance-dominated scenario.
A more quantitative picture can be derived from
Eqs.3,4, where the PP and SP temporal profiles are taken
into account, matching those retrieved from the experi-
mentally measured autocorrelation (Fig.2).
As model parameters for the FLG we use the ex-
perimental SR value νca=1580cm−1, with fitted τca =
1.1±0.1ps[9, 41] (corresponding to FWHM(G)= 10cm−1)
and τda = τba = τea = 10 ± 2fs in agreement with the
value measured for SLG[43]. The ratio between NVRB
= (3.0 ± 0.7) × 10−5
and CARS contributions ηCARS
ηN V RB
is obtained by fitting to the experimental data in Fig.3
with Eqs.1,19,20. The resulting spectra (colored dashed
lines in Fig.3), evaluated by tuning only the PP-SP de-
lays, are in good agreement with the experimental data,
with ηCARS
as the only adjustable parameter. This ratio,
ηN V RB
combined with Eqs.5,6, allows us to extract the ratio be-
tween the third-order nonlinear susceptibilities for CARS
and NVRB:
χ(3)
CARS
N V RB ∼ 1.3 at the G-phonon resonance.
χ(3)
The dependence of our spectral profiles on the inter-
pulse delay, ∆T , indicates that the peculiar FWM line-
shapes for SLG and FLG originates from the inter-
ference between two electronically resonant radiation-
In the electronically non-resonant case, CARS provides
access to the real part of χ(3)[18]. However, due to the
dispersive nature of the χ(3) real part[18], it distorts the
phonon lineshapes[3], unlike SR. In SLG and FLG the
FWM signal arises from the imaginary (non dispersive)
CARS susceptibility, and is amplified by its NVRB (third
term in Eq.8). Thus, the signal can be used for vibra-
tional imaging, unlike the non-resonant case[18].
The vibrationally resonant contribution I can be iso-
lated by subtracting from the I2 FWM signal at ν2−νP ∼
νG, the NRVB obtained by linear interpolation of the
spectral intensities measured at the two frequencies at
the opposite sides of vibrational resonance:
(I3 − I1)
I = I1 − I2 +
(9)
ν2 − ν1
ν3 − ν1
where the indexes i=1,2,3 refer to data at ν1 = νP +
1545cm−1, ν2 = νP + 1576cm−1, ν3 = νP + 1607cm−1
(i.e. with ν2 near to the G phonon frequency and ν1,3 −
νG greater than two half-widths at half maximum of the
measured profiles, as shown in Fig.3).
This combination of electronically resonant NVRB
and CARS non-linear responses gives CARS images (i.e.
retaining vibrational sensitivity) with signal intensities
comparable to those of NVRB, for which sub-ms pixel
dwell times have been demonstrated with the use of a
point detector, e.g. photomultiplier[2].
In our case,
the images in Fig.5 are obtained with a pixel dwell
time∼ 200ms using a Si-Charge-Coupled Device (CCD)
array, aiming at a complete spectral characterization,
and scanning the sample at fixed ∆T with stepper-motor
translation stages.
Figs.5(a -- c) display nonlinear optical images measured
at two different ωS, corresponding to vibrationally non-
resonant and resonant conditions. Extracting for each
image pixel I1 (Fig.5a), I2 (Fig.5c), and I3, required for
Eq.9, we obtain an image with suppression of the signal
not generated by FLG, as in Fig.5e.
To obtain a quantitative comparison of the differ-
intensity histogram in
ent images, we plot the pixel
Figs.5b,d,f. This gives a bimodal distribution: one peak
corresponds to the most intense pixels, associated with
FLG (Ig) and the other is related to the weaker substrate
signal (Is). The ability to discriminate sample from sub-
strate can be quantified in terms of 1) Ig compared to Is,
evaluated as the difference Ig − Is, and 2) the proxim-
ity of Is to I = 0 in the histogram (dashed black line in
Figs.5b,d,f). These two features can be quantified by the
contrast C in order to compare the images: C = I g−I s
,
where I g and I s are the mean FLG and substrate intensi-
ties, corresponding to the local maxima in the histograms
I s
7
Figure 5. Nonlinear optical images of FLG measured under conditions of (a) a non-vibrationally resonant λS at 891.5nm and
(c) a resonant λS at 894 nm and ∆T =1.7 ps. e) CARS image of two FLG flakes, obtained by the spectral dip (see Eq.9). b,d,f)
Intensity histograms of a,c,e). The corresponding contrast C is also reported. The black dashed lines represent the colormap
boundaries of a,c,e). g,h) Intensity profiles along the scanning paths in and out of a FLG flake as highlighted in a,c,e by dashed
and full lines, respectively.
in Figs.5b,d,f. In Figs.5g,h we plot the intensity profiles
along two scanning paths, one inside (dashed) and the
other adjacent to (full line) the FLG flake.
Comparing the three histograms (Figs.5b,d,f), the
vibrationally off resonant FWM image (NVRB only,
Fig.5b) has the highest I g. The visibility of the flakes
is limited by the noise of the detector and by χ(3) non-
linearity of the substrate. NVRB, lacking vibrational
specificity, can also originate from the glass substrate
outside the FLG flake (I s (cid:29) 0), as indicated by the
scanning profile in Fig.5h (red line). This may become
a critical limitation in those substrates with χ(3) much
larger than Si (χ(3) ∼ 2.5 × 10−10 e.s.u.[29]), such as
Au (χ(3) = 4 × 10−9e.s.u[58, 59]). Similarly, the vibra-
tionally resonant FWM, I2, originating from concurrent
CARS and NVRB processes (Fig.5d), has a I s (cid:29) 0 re-
lated to NRVB. The depth of the FWM dip (Fig.5f) is
related to the CARS signal intensity, and its vibrational
sensitivity brings about a substantial contrast increase,
as demonstrated by the close-to-zero average value of the
(green) scanning profile in Fig.5h.
In summary, by using an experimental time-delayed
FWM scheme, CARS peaks equivalent to those seen in
spontaneous Raman were obtained from graphene. By
explaining the physical mechanism responsible for the
FWM signal, we demonstrated that the spectral response
can be described in terms of joint CARS and NVRB
contributions concurring to the overall signal. Unlike
non-resonant FWM, where dispersive lineshapes hamper
vibrational imaging of biological systems, the resonant
nature of FWM in graphene, which can be traced back
to its peculiar electronic properties, mixes CARS and
NVRB, resulting in Lorentzian profiles which are either
peaks or dips depending on their relative strength. We
also demonstrated that CARS can be used for vibrational
imaging with contrast equivalent to spontaneous Raman
microscopy and signal levels as large as those of the third
order nonlinear response.
8
ERC grant Hetero2D, EPSRC grants EP/L016087/1,
EP/K01711X/1, EP/K017144/1. This project has re-
ceived funding from the European Unions Horizon 2020
research and innovation programme under grant agree-
ment No. 785219 - GrapheneCore2.
METHODS
The
third -order
the SLG and
FLG samples can be obtained from the third-order
polarization[15]:
response
for
(cid:90) ∞
(cid:90) ∞
(cid:90) ∞
P (3)(t) ∝ N
E(t − τ2 − τ3)E(t − τ1 − τ2 − τ3)S(3)(τ1, τ2, τ3)
dτ1E(t − τ3)
dτ3
dτ2
0
0
0
(10)
(cid:110)
where N is the number of scatterers, S(3)(τ1, τ2, τ3) may
be expressed as[15]:
µ(τ1 + τ2 + τ3)
S(3)(τ1, τ2, τ3) ∝ (i)3 T r
(cid:2)µ(τ1 + τ2),(cid:2)µ(τ1),(cid:2)µ(0), ρ(−∞)(cid:3)(cid:3)(cid:3)(cid:111)
(cid:2)Ei(t, ∆ti)+c.c.(cid:3) =
and E(t) is the total electric field on the sample
E(t) =
(cid:88)
(cid:88)
(cid:2) Ai(t, ∆it)e−iωit+c.c.(cid:3)
(11)
ACKNOWLEDGEMENTS
We thank M. Polini for useful discussions. We ac-
knowledge funding from the EU Graphene Flagship,
i=P,S
i=P,S
(12)
Consider a SP at ∆tS = 0 with ∆t = ∆tP . The energy
level diagrams in Fig.1schematically illustrate the CARS
and NVRB processes[15]:
CARS(t) ∝ (i)3 nCARSµbaµcbµcdµad
P (3)
(cid:90) ∞
N V RB(t) ∝ (i)3 nNVRBµea4
P (3)
(cid:90) ∞
(cid:90) ∞
dτ3
dτ2
(cid:90) ∞
0
0
0
(cid:90) ∞
(cid:90) ∞
dτ1AP (t − τ1 − τ2 − τ3, ∆t)A∗
S(t − τ2 − τ3)AP (t − τ3, ∆t)
e−iωP (t−τ1−τ2−τ3,∆t)e+iωS (t−τ2−τ3)e−iωP (t−τ3,∆t)e−i¯ωbaτ1e−i¯ωcaτ2e−i¯ωdaτ3
dτ2
dτ1AP (t − τ1 − τ2 − τ3)AP (t − τ2 − τ3)A∗
dτ3
e−iωP (t−τ1−τ2−τ3,∆t)e−iωP (t−τ2−τ3,∆t)e+iωS (t−τ3)e−i¯ωeaτ1 e−i¯ωeaτ2 e−i¯ωeaτ3
S(t − τ3)
0
0
0
(13)
(14)
(cid:90) ∞
dτ2
By Fourier transform, the frequency dispersed signal
where ¯ωij = ωi − ωj − iγij.
can be expressed as:
P (3)(ω) =
(cid:90) ∞
−∞
P (3)(t)eiωtdt.
(15)
In order to reduce the computational effort to calculate
Eqs.13,14, we also write the pulse fields in terms of their
(cid:90) ∞
(cid:90) ∞
Fourier transforms, obtaining:
(cid:90) ∞
(cid:90) ∞
(cid:90) ∞
CARS(ω) ∝ ηCARS (i)3
P (3)
(cid:90) ∞
dt eiωt
dτ3
−∞
dω3 AP (ω1, ∆t) A∗
0
0
0
dω1
−∞
S(ω2, 0)
dτ1
AP (ω3, ∆t)e−i(ωP +ω1)(t−τ1−τ2−τ3)e+i(ωS +ω2)(t−τ2−τ3)
−∞
−∞
dω2
e−i(ωP +ω3)(t−τ3)e−i¯ωbaτ1e−i¯ωcaτ2 e−i¯ωdaτ3
(16)
where ηCARS = nCARSµbaµcbµcdµad. In this way all the
temporal integrals can be solved analytically:
CARS(ω) ∝ −ηCARS
P (3)
(cid:90) ∞
−∞
dω1
(cid:90) ∞
−∞
dω2
(cid:90) ∞
−∞
dω3δ(ω − 2ωP + ωS + ω1 − ω2 + ω3)
(ωP + ω1 − ¯ωba)(ωP − ωS + ω1 − ω2 − ¯ωca)(2ωP − ωS + ω1 − ω2 + ω3 − ¯ωda)
AP (ω1, ∆t) A∗
S(ω2, 0) AP (ω3, ∆t)
9
(17)
using the energy conservation, represented by the delta
distribution:
δ(ω−2ωP +ωS−ω1+ω2−ω3) =
ei(ω−2ωP +ωS−ω1+ω2−ω3)t,
(cid:90) ∞
the ω2 integral can be simplified:
CARS(ω, ∆t) ∝ −ηCARS
P (3)
AP (ω3, ∆t) AP (ω1, ∆t) A∗
−∞
(18)
(cid:90) ∞
(cid:90) ∞
S(2ωP − ωS − ω + ω3 + ω1, 0)
−∞
−∞
dω1
dω3
(cid:90) ∞
(cid:90) ∞
dω1
−∞
dω2
−∞
(ωP + ω3 − ¯ωba) (ω − ωP − ω1 − ¯ωca) (ω − ¯ωda)
(19)
In a similar way, using ηNVRB = nNVRBµea4, Eq.14 can
be written as:
N V RB(ω, ∆t) ∝ −ηNVRB
P (3)
AP (ω1, ∆t) AP (ω2, ∆t) A∗
S(2ωP − ωS − ω + ω1 + ω2, 0)
(ωP + ω1 − ¯ωea) (2ωP + ω1 + ω2 − ¯ωea) (ω − ¯ωea)
(20)
[1] G. Soavi et al. Nat. Nanotechnol., 15, 1748 (2018)
[2] E. Hendry et al. Phys. Rev. Lett. 105, 097401 (2010)
[3] R. W. Boyd, Nonlinear Optics, (Academic Press, 2008)
[4] E. O. Potma and S. Mukamel, in Coherent Raman Scat-
tering Microscopy, edited by J. Cheng and X. S. Xie
(CRC Press, 2012)
[5] J.B. Khurgin, Appl. Phys. Lett. 104, 161116 (2014)
[6] R. Wu et al. Nano Lett. 11, 5159 (2011)
[7] T. Gu et al. Nat. Photonics 6, 554 (2012)
[8] D.L. Duong et al. Nature 490, 235 (2012)
[9] A.C. Ferrari et al. Phys. Rev. Lett. 97, 187401 (2006)
[10] A.C. Ferrari, D.M. Basko, Nat. Nanotechnol. 8, 235
(2013).
[11] R.F. Begley et al. Appl. Phys. Lett. 25, (1974).
[12] M.D. Duncan et al. Opt. Lett. 7, 350 (1982)
[13] A. Zumbusch et al. Phys. Rev. Lett. 82, 4142 (1999)
[14] J.X. Cheng et al. J. Opt. Soc. Am. B 19, 1363 (2002)
[15] S. Mukamel, Principles of Nonlinear Optical Spec-
troscopy, (Oxford University Press, New York, 1999)
[16] M. Cui et al. Opt. Lett. 34, 773 (2009)
[17] D. Pestov, et al. Science 316, 265 (2007)
[18] C.L. Evans, X.S. Xie, Annu. Rev. Anal. Chem. 1, 883
(2008)
[19] C. L. Evans et al. Proc. Natl. Acad. Sci. U.S.A 102, 16807
(2005)
[20] C. H. Camp Jr and M. T. Cicerone, Nat. Photonics, 5,
295 (2015)
[21] Y. J. Lee et al. ACS Macro Lett. 1 (11), 1347 (2012)
[22] S. H. Lim et al. J. Phys. Chem. B 110 (11), 5196 (2006)
[23] R.S. Lim, et al. J. Lipid Res. 52 2177 (2011)
[24] C. Steuwe et al. Nano Lett. 11, 5339 (2011)
[25] K. Ikeda, K. Uosaki Nano Lett. 9, 1378 (2009)
[26] Y.J. Lee et al. Phys. Rev. B 82, 165432 (2010)
[27] G. Dovbeshko et al. Nanoscale Res. Lett. 9, 263 (2014)
[28] T. Baldacchini, R. Zadoyan, Opt. Express 18, 19219
(2010)
[29] J. Brocious, E.O. Potma, Mater. Today 16, 344 (2013)
[30] C. Ferrante et al. Nat. Commun., 9, 308 (2018)
[31] J. Koivistoinen et al. J. Phys. Chem. Lett., 8, 4108 (2017)
[32] L. Lafeta et al. Nano Lett., 17 (6), pp 34473451 (2017)
[33] X. S. Li, W. W. Cai, J. H. An, S. Kim, J. Nah, D. X.
Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.
K. Banerjee, L. Colombo, R. S. Ruoff, Science 324, 1312
(2009).
[34] S. Bae, H. Kim, Y. Lee, X. Xu, J. S. Park, Y. Zheng,
J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y. J.
Kim, K. S. Kim, B. Ozyilmaz, J. H. Ahn, B. H. Hong, S.
Iijima, Nat. Nanotechnol. 5, 574 (2010).
[35] F. Bonaccorso, A. Lombardo, T. Hasan, Z. P. Sun, L.
Colombo, A. C. Ferrari, Mater. Today 15, 564 (2012).
[36] D. M. Basko, S. Piscanec, A. C. Ferrari, Phys. Rev. B
80, (2009).
[37] A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K.
Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krish-
namurthy, A. K. Geim, A. C. Ferrari, A. K. Sood, Nat.
Nanotechnol. 3, 210 (2008).
[38] K. S. Novoselov et al. Proc. Natl. Acad. Sci. USA 102
(30), 10451 (2008)
[39] G. Krauss et al. Opt. Lett., 34, 2847 (2009)
[40] M. Marangoni et al. Opt. Lett., 34, 3262 (2009)
[41] N. Bonini et al. Phys. Rev. Lett. 99, 176802 (2007)
[42] A. Tomadin, et al. Phys. Rev. B 88, 035430 (2013)
[43] D. Brida et al. Nat. Commun. 4, 1987 (2013)
[44] A. Volkmer et al. Appl. Phys. Lett. 80, (2002)
[45] F.M. Kamga, M.G. Sceats, Opt. Lett. 5, 126 (1980)
[46] D.A. Sidorov-Biryukov, E.E.Serebryannikov, A.M.
Zheltikov, Opt. Lett. 31, 2323 (2006)
[47] R. Selm, et al. Opt. Lett. 35, 3282 (2010).
[48] V. Kumar et al. Opt. Express 19, 15143 (2011).
[49] G. Batignani et al. Sci. Rep. 6 (2016)
[50] P. Wang et al. Chem. Phys. Lett. 556, 146 (2013)
[51] L.G. Can¸cado, et al. Phys. Rev. B 76, 064304 (2007)
[52] M. Muller, A. Zumbusch, ChemPhysChem 8, 2156 (2007)
[53] Y. Zhang, et al. Nature 459, 820 (2009)
[54] J. B. Wu, et al. Nat. Commun. 5, 5309 (2014)
[55] J. B. Wu, et al. ACS Nano 9, 7, 7440 (2015)
[56] K. F. Mak, et al. Proc. Natl. Acad. Sci. USA 107, 14999
(2010)
[57] U. Fano, Phys. Rev. 124, 1866 (1961)
[58] R. W. Boyd et al. Opt. Commun., 326, 74 (2014)
[59] E. Xenogiannopoulou et al. Opt. Commun., 275, 217
(2007)
10
|
1612.02867 | 1 | 1612 | 2016-12-08T23:02:31 | Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides | [
"cond-mat.mes-hall"
] | We present low temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field $B$ applied to monolayers of different semiconducting transition metal dichalcogenides. For both WSe$_2$ and WS$_2$ monolayers, the dark exciton emission is observed at $\sim$50 meV below the bright exciton peak and displays a characteristic doublet structure which intensity is growing with $B^2$, while no magnetic field induced emission peaks appear for MoSe$_2$ monolayer. Our experiments also show that the MoS$_2$ monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of $\sim$100 meV. | cond-mat.mes-hall | cond-mat | Brightening of dark excitons in monolayers of semiconducting transition metal
dichalcogenides
M. R. Molas,1, ∗ C. Faugeras,1 A. O. Slobodeniuk,1 K. Nogajewski,1 M. Bartos,1 D. M. Basko,2 and M. Potemski1, †
1Laboratoire National des Champs Magnétiques Intenses,
CNRS-UGA-UPS-INSA-EMFL, 25, avenue des Martyrs, 38042 Grenoble, France
2Laboratoire de Physique et Modélisation des Milieux Condensés,
Université de Grenoble-Alpes and CNRS, 25 rue des Martyrs, 38042 Grenoble, France
(Dated: December 12, 2016)
6
1
0
2
c
e
D
8
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
7
6
8
2
0
.
2
1
6
1
:
v
i
X
r
a
We present low temperature magneto-photoluminescence experiments which demonstrate the
brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different
semiconducting transition metal dichalcogenides. For both WSe2 and WS2 monolayers, the dark
exciton emission is observed at ∼50 meV below the bright exciton peak and displays a characteris-
tic doublet structure which intensity is growing with B2, while no magnetic field induced emission
peaks appear for MoSe2 monolayer. Our experiments also show that the MoS2 monolayer has a
dark exciton ground state with a dark-bright exciton splitting energy of ∼100 meV.
I.
INTRODUCTION
Monolayers (MLs) of semiconducting transition metal
dichalcogenides (S-TMDs) MX2 where M=Mo or W and
X=S, Se or Te, are direct band gap semiconductors [1]
with the minima (maxima) of conduction (valence) band
located at the inequivalent K+ and K− points of their
hexagonal Brillouin zone (BZ). These two-dimensional
semiconductors host tightly bound excitons with uncon-
ventional properties such as binding energies as large as
few hundreds of meV and non Rydberg excitation spec-
trum [2–4]. The lack of inversion symmetry together with
the strong spin-orbit interaction lift the degeneracy be-
tween spin levels in the conduction (CB) and valence
(VB) bands at the K+ and K− points related by time
reversal symmetry. The spin-orbit interaction leads to
well separated spin subbands in each valley and to the
possibility of initializing a defined valley population with
circularly polarized optical excitation [5–8] or generation
of valley coherence [9, 10]. The spin-orbit splitting ∆so,vb
in the valence is as large as few hundreds of meV [3, 11–
22] while its counterpart in the conduction band ∆so,cb
is predicted to be of the order of few tens of meV only.
What is however important is that ∆so,cb can be posi-
tive or negative [23, 24] and in consequence, two distinct
ordering of the spin orbit split CB subbands are feasi-
ble [25–27].
Because optical transitions in S-TMDs do conserve the
spin, different orderings of electronic bands in the con-
duction band have profound consequences on their op-
tical properties. Depending on the sign of ∆so,cb, the
excitonic ground state can be bright (parallel spin con-
figuration for the top VB and the lowest CB subbands
between which the optical transition is allowed) or dark
(anti-parallel spin configuration and optically forbidden
ground state interband transition). The ordering of the
∗ maciej.molas@gmail.com
† marek.potemski@lncmi.cnrs.fr
electronic bands, characteristic for these two monolayer
families, referred to as bright and darkish ones, are il-
lustrated in Fig. 1(a). Theoretical studies [25–27] indeed
predict that monolayers of MoSe2 and of MoTe2 should
be bright (∆so,cb>0 to set a convention) while WSe2 and
WS2 monolayers are darkish (∆so,cb<0). Yet, there is
no general consensus concerning the bright of darkish
character of a MoS2 monolayer. The theoretical works
reported in Refs 26, 27 classify the MoS2 monolayer as
a bright system: ∆so,cb>0 but as small as 3 meV. In-
stead, another theoretical study [28] indicates that MoS2
monolayers are rather darkish (∆so,cb ∼ −40meV ).
A detailed knowledge of the exciton fine structure is
crucial for S-TMD based optoelectronic devices and for
valleytronic applications, as i) optical properties strongly
depend on the type of excitonic ground state, and ii) scat-
tering mechanisms, and in particular intervalley scatter-
ing mechanisms, can have much different efficiencies for
bright and dark excitons [29, 30]. On the experimen-
tal point of view, recent optical studies of WSe2 have
shown that the temperature dependence of its PL inten-
sity is consistent with a dark excitonic ground state and
the dark-bright exciton splitting of about 30 meV has
been experimentally estimated from temperature activa-
tion type analysis [31–33].
Magnetic fields, applied in an adequate configuration
with respect to a crystal axis, can mix electronic wave
functions and thus the excitonic states which are built
out of these wave functions. This effect triggered the
spectroscopy of optically dark excitons in a large variety
of condensed matter systems, ranging from bulk semi-
conductors [34], semiconductor quantum dots [35, 36],
to single wall carbon nanotubes [37, 38]. One expects
that also in monolayers of S-TMDs, the in-plane mag-
netic field acts as a perturbation to the system's Hamil-
tonian, mixing the two lowest spin levels in the CB and
hence, the bright excitons giving some optical activity to
the initially dark excitonic states [39].
2
FIG. 1. (a) Diagram of relevant subbands in the CB and VB at the K+ and K− points of the BZ in the bright and darkish
monolayers of S-TMDs. The orange (green) curves indicate the spin-up (spin-down) subbands. The red and blue wavy lines
show the A exciton transitions which are optically active. ∆so,cb denotes the spin-orbit splitting in the conduction band. (b)
Schematic representation of the experimental configuration for magneto-PL measurements in Voigt configuration.
In this paper, we provide a direct measurement of the
dark exciton emission in darkish monolayers of S-TMDs
by mixing the spin levels of bright and dark excitons by
an in-plane magnetic field. Dark excitons appear in the
low temperature magneto-photoluminescence (PL) spec-
tra as clear features growing with the magnetic field at
energies lower than that of the bright exciton. This
observation gives a direct access to the values of dark-
bright exciton splitting in WSe2 and WS2 monolayers. In
the case of MoSe2, no significant change in the emission
spectrum is observed when applying a magnetic field, in
agreement with its bright exciton ground state. MoS2 is
shown to belong to the family of darkish materials with a
dark-bright splitting energy close to 100 meV. The emis-
sion intensity of dark excitons increases as B2, in accor-
dance with their perturbative activation by the in-plane
magnetic field.
II. THEORETICAL BACKGROUND
To examine the band edge interband transitions in S-
TMD monolayers we consider the top VB and two spin-
orbit split CB subbands [see Fig. 1(a)]. Associated with
these subbands and relevant for our considerations are
intravalley interband transitions (intravalley A excitons)
which involve the states from the the same K+ or K−
valley. Four types of intravalley A excitons can be dis-
tinguished and labelled according to their valley τ = ±
and CB spin scb =↑,↓ indices (the VB spin index, svb is
fixed to svb =↑ in K+ valley and svb =↓ in K− valley).
The configurations with svb = scb =↑ from the K+ val-
ley and svb = scb =↓ from the K− valley correspond to
optically active, bright A excitons, referred to as τ, b(cid:105).
The configurations with svb =↑, scb =↓ from the K+ val-
ley and svb =↓, scb =↑ from the K− valley correspond to
optically inactive, dark A excitons, refereed to as τ, d(cid:105).
The ground state of bright (darkish) S-TMD monolay-
ers is then formed from bright (dark) A excitons. Because
these quasi-particles differ from each other by their spin
configuration in the CB, spin-flip processes in the CB can
make the dark states optically active and can allow for
investigations of the ground state of darkish materials.
A magnetic field B = (Bx, By), applied along the
plane of a S-TMD monolayer, mixes the spin states
in the CB and VB via the Zeeman interaction. Since
∆so,vb (cid:29) ∆so,cb, the spin-mixing in the VB can be ne-
glected. The Zeeman term acting on the CB states can
be expressed as:
HZ =
1
2
gcbµB(σxBx + σyBy)
(1)
Here gcb is the in-plane gyromagnetic ratio for the CB,
µB is the Bohr magneton and σx,y are the Pauli matrices
in the CB spin subspace. The in-plane magnetic field
results in the mixing of the dark and bright excitons. It
can be described by an effective 2× 2 Hamiltonian in the
basis of {τ, b(cid:105), τ, d(cid:105)}, obtained by the projection of spin
states of the CB, mixed by the magnetic field, on the
exciton states
Ed
H τ
ex =
1
2 gcbµBBτ
(2)
Here we introduced B± = Bx±iBy. Eb and Ed are the
energies of the bright and dark excitons in the absence
of an external magnetic field, Ed − Eb = ∆so,cb. The
application of the in-plane magnetic field does not lift
the double degeneracy of each dark and bright exciton
states as H τ
ex does not depend on valley index τ.
Assuming that the Zeeman term gives a small correc-
tion to the basic exciton states, we obtain the mixed
eigenstates up to second order in magnetic field:
τ, b(cid:105)mix =
τ, b(cid:105)
1 + w/2
− gcbµBBτ
2∆so,cb
τ, d(cid:105),
(3)
(cid:20)
Eb
1
2 gcbµBB−τ
(cid:21)
.
τ, d(cid:105)mix =
τ, d(cid:105)
1 + w/2
+
gcbµBB−τ
2∆so,cb
τ, b(cid:105).
(4)
III. EXPERIMENTAL RESULTS AND
DISCUSSION
3
Here w = g2
so,cb) (cid:28) 1. Their eigenener-
gies are very close to the energies of the dark and bright
excitons (the correction is ∝ w∆so,cb).
cbµ2
BB2/(4∆2
The admixture of bright states to the dark exciton
state makes the latter resonance to be possibly observed
in the PL spectra when the in-plane magnetic field is ap-
plied to the layer. The intensity Id of such a PL line
can be expected to be proportional to the fraction w of
bright exciton in the corresponding mixed state and to
the population nd of dark excitons:
Id = ndIbw ∝ ndIbB2,
(5)
where Ib is the intensity of the pure bright exciton
state emission in the absence of the magnetic field. With
available magnetic fields, the factor w remains rather
small and dark excitons can hardly be observed in ab-
sorption experiments. We note two different situations.
i) For bright materials, such as MoSe2 or MoTe2, the
energy of dark excitons is larger than the energy of the
bright ones. Therefore, at low temperatures, the popula-
tion of dark excitons is suppressed by a Boltzmann factor
exp(−∆so,cb/kBT ) and optical transitions are mainly due
to low-lying bright exciton states. In this case the obser-
vation of dark excitons at low temperature is extremely
unlikely. ii) For darkish materials, such as WSe2 or WS2,
the situation is opposite and the direct observation of
dark excitons is possible.
So far we have considered the A excitons formed by
the direct electron-hole Coulomb interaction and have
not included effects of the exchange part of the Coulomb
interaction. The exchange interaction is expected to lift
the double valley degeneracy of dark intravalley A exci-
tons due to the presence of a transition dipole moment
perpendicular to the monolayer plane, absent for bright
excitons [39, 40]. This degeneracy lifting can be viewed
as a local-field effect due to the out-of-plane transition
dipole moment of spin-forbidden dark excitons.
It is
analogous to the exchange energy shift of the Z-excitons
in semiconductor quantum wells [41, 42]. The result-
ing energy splitting between the two spin-forbidden dark
exciton components in S-TMD monolayers was roughly
estimated in Ref. 39 to be about 10 meV; a more precise,
microscopic calculation of this splitting is still lacking, to
the best of our knowledge. The discussed above effects
of the in-plane magnetic field are equally valid for each
component of the expected doublet structure of dark ex-
citons in S-TMD monolayers.
Monolayers of S-TMDs have been prepared by me-
chanical exfoliation of bulk crystals purchased from HQ
Graphene.
Initially, the flakes were exfoliated onto a
polydimethylsiloxane (PDMS) stamp attached to a glass
plate. MLs of S-TMDs were then identified by their opti-
cal contrast and cross-checked by Raman scattering and
PL measurements at room temperature. In order to de-
posit them on target Si/SiO2(320 nm) substrates, an all-
dry PDMS-based transfer method similar to the one de-
scribed in Ref. 43 was employed.
Low temperature magneto-PL experiments were per-
formed in the Voigt configuration [see Fig. 1(b)] using
an optical-fiber-based insert placed in a superconduct-
ing magnet producing magnetic fields up to 14 T. The
samples were placed on top of a x-y-z piezo-stage kept in
gaseous helium at T = 4.2 K. The light from a semicon-
ductor diode laser (λ=515 nm) was coupled to an opti-
cal fiber with a core of 50 µm diameter and focused on
the sample by an aspheric lens (spot diameter around
10 µm). PL signals were collected by the same lens, in-
jected into a second optical fiber of the same diameter,
and analyzed by a 0.5 m long monochromator equipped
with a charge-couple-device (CCD) camera.
To investigate the effect of an in-plane magnetic field
on the PL signal of S-TMD monolayers, we measured the
evolution of the low temperature (T = 4.2 K) PL spectra
of the WSe2, WS2, MoSe2, and MoS2 MLs in the Voigt
configuration as a function of an external magnetic field
up to B = 14 T. The obtained spectra at B = 0 and at
B = 14 T are presented in the upper panels of Fig. 2.
The zero-field PL spectra of all our monolayers display
two characteristic emission features, labelled A and T,
which are associated with recombination of the neutral
[an electron-hole (eh) pair] and charged [an eh pair + an
extra carrier (electron or hole)] excitons formed at the K±
points of the BZ [9, 30, 31, 44–50]. In the case of WSe2,
WS2, and also of MoS2, additional features are apparent
in the PL spectra in the form of a series of emission lines
(WSe2 and WS2) or a broad band (MoS2), at energies
below the A exciton energy and overlapping with the
T peak. These additional lines have been attributed in
the literature to the so-called localized/bound or defect-
related excitons [9, 30, 31, 44–46].
We start with the analysis of the results obtained for
the tungsten-based family, i.e. WSe2 and WS2 MLs, as
both of them are rather firmly predicted to belong to
the family of darkish monolayers [25–27]. The zero-field
PL spectra, apart the A and T peaks, consist of several
overlapping emission lines on the lower energy side of the
spectrum [upper panels of Fig. 2(a) and (b)]. We show in
Fig. 2(a) and (b) that the application of a magnetic field
in the plane of these monolayers strongly affects their PL
spectra at energies 50− 60 meV below the A exciton line.
To better visualize the effects of magnetic fields and com-
pare the results obtained for different materials, we define
4
FIG. 2. (upper panels) PL spectra of (a) WSe2, (b) WS2, (c) MoSe2, and (d) MoS2 monolayers at T = 4.2 K measured at
zero field (red curves) and at B = 14 T (blue curves) applied in the plane of the crystal. The PL spectra were normalized to
the intensity of the A exciton line. (lower panels) Corresponding relative intensities of the monolayers defined as (PLB=14 T -
PLB=0 T)/PLB=0 T are represented by black dots. The orange and green curves indicate Gaussians fits of the data.
a relative spectrum as (PLB(cid:54)=0 - PLB=0)/PLB=0. Such
relative intensity spectra for B = 14 T are presented in
the lower panels of Fig. 2(a) and (b). For WSe2 and WS2
MLs, these spectra are composed of two peaks, labelled
D1 and D2, which appear on the lower energy side of
the bright A exciton. In agreement with our theoretical
arguments, these two peaks are assigned to the magnetic-
field induced emission due to dark excitons. The higher
energy peak, D1, emerges about 47 meV below the A ex-
citon line for both members of the tungsten-based family.
The energy separation between the D1 and D2 peaks is
14 meV for WSe2 monolayer and 23 meV for the WS2
monolayer.
To analyze further the data, we fitted the D1 and D2
features using two Gaussian functions [see lower panels
of Fig. 2 (a) and (b)].
In the whole range of investi-
gated magnetic fields, the energy and the full width at
half maximum (FWHM) of the two D1 and D2 peaks
are constant. The brightening of these dark excitons is
evidenced by the quadratic evolution of the integrated in-
1.601.651.701.750.00.51.01.52.02.5Relative int. (arb. u.)14 meV47 meV Energy (eV)D1D2A0481216(a)PL (arb. u.) B= 0 T 14 TTWSe21.952.002.052.100.00.51.01.52.02.5Relative int. (arb. u.) Energy (eV)T0481216202428(b)PL (arb. u.)WS2 B= 0 T 14 TA23 meV47 meVD1D21.551.601.651.700.00.51.01.52.02.5020406080Relative int. (arb. u.) Energy (eV)(c)PL (arb. u.)MoSe2x5 B= 0 T 14 TTA012345671.651.701.751.801.851.901.952.000.00.51.01.52.02.5 Relative int. (arb. u.)Energy (eV)98 meVD(d)PL (arb. u.)MoS2 B= 0 T 14 TA tensity of these peaks as a function of the magnetic field
(∼ αB2, where α is a fitting parameter). This behavior
is presented in Fig. 3 and is in agreement with the ar-
guments presented in the preceding section (Eq. 5). Im-
portant here is the observed B2 dependence and not the
precise rates of increase of the two D lines, which appar-
ent values are affected by the chosen normalization of the
relative spectra. We consider that the energy difference
between the bright A exciton peak and the dark D1 exci-
ton peaks corresponds well to the theoretical predictions
of the ∆so,cb magnitude [25–27]. Note that the values
for ∆so,cb calculated in Ref. 25–27 do not include the
electron-hole Coulomb effects, which obviously affect the
interband transition energies but can also significantly
influence the apparent bright-dark exciton splitting due
to electron-hole exchange effects.
An MoSe2 monolayer is predicted to belong to the fam-
ily of bright S-TMDs. Its zero-field PL spectra is rather
simple (and similar to that observed for MoTe2 monolay-
ers [51]). It is composed of only two A and T features
[see Fig. 2(c)][47–49]. When a magnetic field is applied in
the direction along the plane of the layer, no significant
changes of the PL spectra are observed.
In particular,
there are no additional growing structures on the high
energy side of the A exciton line, where the dark exciton
emission could be expected according to the band order-
ing at the K± points [see Fig. 1(a)]. The dark exciton
emission can not be detected with our experimental con-
ditions as a result of the fast relaxation of carriers to the
lowest energy state which is a bright exciton. The only
field induced effect observed in the magneto-PL spectra
of the MoSe2 monolayer is a small decrease in the in-
tensity of the T-peak [see lower panel of Fig. 2(c)]. The
origin of this field induced suppression of the trion emis-
sion is not clear for us and calls for a possible theoretical
explanation, thought one may speculate that it reflects
an influence of the magnetic field on the formation of the
charged excitons in a MoSe2 monolayer through a mixing
of the spin split bands in both valleys.
Existing models describing the band ordering for MoS2
monolayer largely predict a positive, thought small,
∼ 3 meV value for ∆so,cb [25–27], thus placing MoS2 in
the family of bright materials. Recently, however, a nega-
tive dark-bright exciton splitting has been predicted [28]
with a value close to −40 meV. By comparing the PL
spectra measured at zero magnetic field for the different
materials presented in this study (Fig. 2), the low tem-
perature PL spectrum of MoS2 resembles more the one
observed for WS2 and WSe2 than the one of MoSe2 or
of MoTe2 [51]. In similarity to the low temperature PL
spectra of darkish monolayers, the spectrum of MoS2 also
displays a significantly broad emission band at energies
lower than that of the A exciton [see Fig. 2(d)]. The ob-
servation of either a well defined two peaks PL spectrum
arising from the A and T excitons or an additional broad
band associated with localized/bound excitons [6, 50],
5
FIG. 3. Magnetic-field dependence of the intensities of dark
exciton lines (D1, D2, and D) obtained on WSe2, WS2, and
MoS2 monolayers.
appears to be characteristic of the two families of bright
or darkish S-TMD monolayers. The presence of emis-
sion due to localized/bound excitons in the low temper-
ature B = 0 PL of darkish monolayers and not in the
bright ones could be due to the appearance of long-lived
reservoir of dark excitons in the former systems, which
then effectively diffuse and/or relax towards other possi-
ble radiative centers. Similar relaxation processes can be
largely suppressed in bright monolayers, as the ground
state excitons in these systems already represent the ef-
fective recombination channel. Following this logic, the
ground state exciton should be dark in the MoS2 mono-
layer.
The darkish character of the MoS2 monolayer is con-
firmed by our magneto-PL study as indeed the in-plane
magnetic field has a dramatic effect on the PL spectrum
of this monolayer. The relative intensity spectrum dis-
played in the lower panel of Fig. 2(d) shows a rather
single but broad peak, labelled D, which is centered at
about 97 meV below the A exciton line of MoS2. Even
though all observed PL peaks are much broader in our
MoS2 monolayer than in other studied materials, we have
performed the same analysis as for the other materials.
Similarly to the case of WS2 and WSe2 monolayers, the
02468101214015304560750246810048121620MoS2 Magnetic field (T)DWS2D370x10-6/T2D239x10-6/T2D154x10-6/T2 Dark excitons intensity x10-3 (arb. units)D2D1WSe2D181x10-6/T2D2 D1D296x10-6/T2 shape (width and center position) of the relative spec-
trum of the MoS2 monolayer remain field independent
but its amplitude increases quadratically, ∼ αB2, with
the magnetic field [see Fig. 3]. This result confirm placing
the MoS2 in the family of darkish S-TMD with a dark-
bright exciton splitting twice bigger than that found in
WS2 or in WSe2.
IV. CONCLUSIONS
To conclude, we have presented the experimental in-
vestigations supported by the theoretical consideration
of the effect of brightening of dark excitons in S-TMD
monolayers induced by the application of a magnetic field
in the direction along the plane of the layer. Field in-
duced emission due to dark excitons can be observed at
low temperatures in S-TMD monolayers for which the
dark excitons are lower in energy than the bright exci-
tons. Emission intensities of dark excitons grow quadrat-
ically with the strength of the in-plane magnetic field.
These results lead us to establish the WS2, WSe2 and
MoS2 monolayer as darkish materials, i.e., the direct
bandgap systems but with a dark excitonic ground state,
6
and monolayers of MoSe2 as a bright materials with a
bright exciton ground state. The bright-dark exciton
splitting is found to be of about 50 meV in WS2 and
WSe2 monolayers in fair agreement with theoretical ex-
pectations [25–27], but its value derived for the MoS2
monolayer is surprisingly large [28]. The characteristic
doublet structure of dark excitons has been observed for
WS2, WSe2 monolayers, along the lines of the recent the-
oretical proposal [39]. Different ordering of the spin-orbit
split subbands in the conduction band for two, bright and
darkish TMD families, is also speculated to be reflected
in the B = 0 low temperature PL spectra: bright mono-
layers show a simple emission due to exciton and trions,
the darkish ones display an additional broad/multipeak
emission band due to localised/bound excitons.
V. ACKNOWLEDGEMENTS
The work has been supported by the European Re-
search Council (MOMB project no. 320590), the EC
Graphene Flagship project (no. 604391), the National
Science Center (grant no. DEC-2013/10/M/ST3/00791)
and the Nanofab facility of the Institut Néel, CNRS
UGA.
1 K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz,
Phys. Rev. Lett. 105, 136805 (2010).
2 M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada,
Y. Zhang, D. Y. Qiu, W. Ruan, S.-K. Mo, Z. Hussain, Z.-
X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, Nat.
Mater. 13, 1091 (2014).
3 Z. Ye, T. Cao, K. O'Brien, H. Zhu, X. Yin, Y. Wang, S. G.
Louie, and X. Zhang, Nature 513, 214 (2014).
4 A. Chernikov, A. M. van der Zande, H. M. Hill, A. F.
Rigosi, A. Velauthapillai, J. Hone, and T. F. Heinz, Phys.
Rev. Lett. 115, 126802 (2015).
5 D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Phys.
Rev. Lett. 108, 196802 (2012).
6 K. F. Mak, K. He, J. Shan, and T. F. Heinz, Nat. Nan-
otechnol. 7, 494 (2012).
7 T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu,
P. Tan, E. Wang, B. Liu, and J. Feng, Nat. Commun. 3,
887 (2012).
8 H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Nat. Nan-
otechnol. 7, 490 (2012).
9 A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian,
J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao,
W. Yao, and X. Xu, Nat. Nanotechnol. 8, 634 (2013).
10 G. Wang, X. Marie, B. L. Liu, T. Amand, C. Robert,
F. Cadiz, P. Renucci, and B. Urbaszek, Phys. Rev. Lett.
117, 187401 (2016).
11 B. W. H. Baugher, H. O. H. Churchill, Y. Yang,
P. Jarillo-Herrero, Nat. Nanotechnol. 9, 262 (2014).
12 Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan,
Z. Liu, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin,
H.-T. Jeng, S.-K. Mo, Z. Hussain, A. Bansil, and Z.-X.
Shen, Nat. Nanotechnol. 9, 111 (2014).
and
13 J. M. Riley, F. Mazzola, M. Dendzik, M. Michiardi,
T. Takayama, L. Bawden, C. Granerød, M. Leandersson,
T. Balasubramanian, M. Hoesch, T. K. Kim, H. Takagi,
W. Meevasana, P. Hofmann, M. S. Bahramy, J. W. Wells,
and P. D. C. King, Nat. Phys. 10, 835 (2014).
14 J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones,
G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao,
and X. Xu, Nat. Commun. 4, 1474 (2013).
15 A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi,
Y. Li, O. B. Aslan, D. R. Reichman, M. S. Hybertsen,
and T. F. Heinz, Phys. Rev. Lett. 113, 076802 (2014).
16 W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H.
Tan, and G. Eda, ACS Nano 7, 791 (2012).
17 D. Kozawa, R. Kumar, A. Carvalho, K. K. Amara,
W. Zhao, S. Wang, M. Toh, R. M. Ribeiro, A. H. C. Neto,
K. Matsuda, and G. Eda, Nat. Commun. 5, 4543 (2014).
18 H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie,
S. Xu, X. Chen, W. Yao, and X. Cui, Sci. Rep. 3, 1608
(2013).
19 W. Li, A. G. Birdwell, M. Amani, R. A. Burke, X. Ling,
Y.-H. Lee, X. Liang, L. Peng, C. A. Richter, J. Kong, D. J.
Gundlach, and N. V. Nguyen, Phys. Rev. B 90, 195434
(2014).
20 B. Zhu, X. Chen, and X. Cui, Sci. Rep. 5, 9218 (2015).
21 A. R. Klots, A. K. M. Newaz, B. Wang, D. Prasai,
H. Krzyzanowska, J. Lin, D. Caudel, N. J. Ghimire, J. Yan,
B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus,
N. H. Tolk, S. T. Pantelides, and K. I. Bolotin, Sci. Rep.
4, 6608 (2014).
22 A. Hanbicki, M. Currie, G. Kioseoglou, A. Friedman, and
B. Jonker, Sol. State Commun. 203, 16 (2015).
7
075451 (2013).
035009 (2016).
23 K. Kośmider and J. Fernández-Rossier, Phys. Rev. B 87,
39 A. O. Slobodeniuk and D. M. Basko, 2D Materials 3,
24 K. Kośmider, J. W. González, and J. Fernández-Rossier,
Phys. Rev. B 88, 245436 (2013).
40 H. Dery and Y. Song, Phys. Rev. B 92, 125431 (2015).
41 Y. Chen, B. Gil, P. Lefebvre, and H. Mathieu, Phys. Rev.
25 G.-B. Liu, W.-Y. Shan, Y. Yao, W. Yao, and D. Xiao,
B 37, 6429 (1988).
Phys. Rev. B 88, 085433 (2013).
26 A. Kormányos, G. Burkard, M. Gmitra, J. Fabian, V. Zó-
lyomi, N. D. Drummond, and V. Fal'ko, 2D Materials 2,
022001 (2015).
27 J. P. Echeverry, B. Urbaszek, T. Amand, X. Marie, and
I. C. Gerber, Phys. Rev. B 93, 121107 (2016).
28 D. Y. Qiu, T. Cao, and S. G. Louie, Phys. Rev. Lett. 115,
176801 (2015).
29 M. M. Glazov, T. Amand, X. Marie, D. Lagarde, L. Bouet,
and B. Urbaszek, Phys. Rev. B 89, 201302 (2014).
30 T. Smoleński, M. Goryca, M. Koperski, C. Faugeras,
T. Kazimierczuk, A. Bogucki, K. Nogajewski, P. Kossacki,
and M. Potemski, Phys. Rev. X 6, 021024 (2016).
31 A. Arora, M. Koperski, K. Nogajewski, J. Marcus,
C. Faugeras, and M. Potemski, Nanoscale 7, 10421 (2015).
32 X.-X. Zhang, Y. You, S. Y. F. Zhao, and T. F. Heinz,
Phys. Rev. Lett. 115, 257403 (2015).
33 G. Wang, C. Robert, A. Suslu, B. Chen, S. Yang, S. Alam-
dari, I. C. Gerber, T. Amand, X. Marie, S. Tongay, and
B. Urbaszek, Nat. Commun. 6, 10110 (2015).
34 J. Brandt, D. Fröhlich, C. Sandfort, M. Bayer, H. Stolz,
and N. Naka, Phys. Rev. Lett. 99, 217403 (2007).
35 M. Nirmal, D. J. Norris, M. Kuno, M. G. Bawendi, A. L.
Efros, and M. Rosen, Phys. Rev. Lett. 75, 3728 (1995).
36 M. Bayer, O. Stern, A. Kuther, and A. Forchel, Phys. Rev.
B 61, 7273 (2000).
37 S. Zaric, G. N. Ostojic, J. Kono, J. Shaver, V. C. Moore,
M. S. Strano, R. H. Hauge, R. E. Smalley, and X. Wei,
Science 304, 1129 (2004).
38 A. Srivastava, H. Htoon, V. I. Klimov, and J. Kono, Phys.
Rev. Lett. 101, 087402 (2008).
42 L. C. Andreani and F. Bassani, Phys. Rev. B 41, 7536
(1990).
43 A. Castellanos-Gomez, M. Buscema, R. Molenaar,
V. Singh, L. Janssen, H. S. J. van der Zant, and G. A.
Steele, 2D Materials 1, 011002 (2014).
44 A. A. Mitioglu, P. Plochocka, A. Granados del Aguila,
P. C. M. Christianen, G. Deligeorgis, S. Anghel, L. Ku-
lyuk, and D. K. Maude, Nano Lett. 15, 4387 (2015).
45 G. Plechinger, P. Nagler, J. Kraus, N. Paradiso, C. Strunk,
C. Schüller, and T. Korn, Phys. Stat. Sol. RRL 9, 457
(2015).
46 J. Shang, X. Shen, C. Cong, N. Peimyoo, B. Cao, M. Egin-
ligil, and T. Yu, ACS Nano 9, 647 (2015).
47 Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe,
Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill,
S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz,
Phys. Rev. Lett. 113, 266804 (2014).
48 A. Arora, K. Nogajewski, M. Molas, M. Koperski, and
M. Potemski, Nanoscale 7, 20769 (2015).
49 F. Cadiz, C. Robert, G. Wang, W. Kong, X. Fan, M. Blei,
D. Lagarde, M. Gay, M. Manca, T. Taniguchi, K. Watan-
abe, T. Amand, X. Marie, P. Renucci, S. Tongay, and
B. Urbaszek, 2D Materials 3, 045008 (2016).
50 F. Cadiz, S. Tricard, M. Gay, D. Lagarde, G. Wang,
C. Robert, P. Renucci, B. Urbaszek, and X. Marie, Appl.
Phys. Lett. 108, 251106 (2016).
51 I. G. Lezama, A. Arora, A. Ubaldini, C. Barreteau, E. Gi-
annini, M. Potemski, and A. F. Morpurgo, Nano Lett. 15,
2336 (2015).
|
1710.00048 | 1 | 1710 | 2017-09-20T22:59:23 | Tailoring Magnetic Skyrmions by Geometric Confinement of Magnetic Structures | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | Nanoscale magnetic skyrmions have interesting static and transport properties that make them candidates for future spintronic devices. Control and manipulation of the size and behavior of skyrmions is thus of crucial importance. Using a Ginzburg-Landau approach, we show theoretically that skyrmions and skyrmion lattices can be stabilized by a spatial modulation of the uniaxial magnetic anisotropy in a thin film of centro-symmetric ferromagnet. Remarkably, the skyrmion size is determined by the ratio of the exchange length and the period of the spatial modulation of the anisotropy, at variance with conventional skyrmions stabilized by dipolar and Dzyaloshinskii--Moriya interactions (DMIs). | cond-mat.mes-hall | cond-mat | Tailoring Magnetic Skyrmions by Geometric Confinement of Magnetic Structures
Material Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA and
Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA
Steven S.-L. Zhang∗
Material Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
C. Phatak
Material Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA and
Department of Materials Science and Engineering,
Northwestern University, Evanston, Illinois 60208, USA
A. K. Petford-Long
Material Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA and
O. G. Heinonen
Northwestern-Argonne Institute of Science and Technology,
2145 Sheridan Road, Evanston, Illinois 60208, USA
(Dated: September 29, 2018)
Nanoscale magnetic skyrmions have interesting static and transport properties that make them
candidates for future spintronic devices. Control and manipulation of the size and behavior of
skyrmions is thus of crucial importance. Using a Ginzburg-Landau approach, we show theoretically
that skyrmions and skyrmion lattices can be stabilized by a spatial modulation of the uniaxial
magnetic anisotropy in a thin film of centro-symmetric ferromagnet. Remarkably, the skyrmion size
is determined by the ratio of the exchange length and the period of the spatial modulation of the
anisotropy, at variance with conventional skyrmions stabilized by dipolar and Dzyaloshinskii -- Moriya
interactions (DMIs).
I.
INTRODUCTION
Two dimensional magnetic skyrmions are nanoscale spin textures that are topologically protected: the spin structure
of an individual skyrmion is associated with an integer winding number which cannot be continuously changed into
another integer number without overcoming a finite energy barrier1 -- 5. The creation, annihilation and transport of
magnetic skyrmions strongly rely on their topological properties6 -- 12, which make them promising candidates as spin
information carriers in future spintronic devices.
Multiple formation mechanisms of magnetic skyrmions have been identified2,6 -- 9,13 -- 15. Most commonly, stable
skyrmions are found in bulk chiral magnets such as MnSi2,16,17 and other B20 transition metal alloys18 -- 22. In these
systems, strong spin-orbit coupling conspires with broken bulk inversion symmetry to give rise to the Dzyaloshinskii --
Moriya interactions (DMIs)23,24 that favor canted spin structure and thus can stabilize skyrmions with definite chi-
rality. DMI can also be induced in a nonchiral transition metal thin film in contact with a heavy metal layer25,26.
This gives rise to structural inversion-symmetry breaking and strong interfacial spin orbit interaction, which can
support the formation of skyrmions. Even in the absence of DMI, long range dipolar interactions alone may stabilize
skyrmions, or magnetic bubbles, as well, but the size of this type of skyrmion (∼ 0.1 to 1 µm) 3,15, is usually larger
than that stabilized by DMI as it scales with the ratio of the exchange coupling to the dipolar interaction. This type
of skyrmion will not, in the absence of DMI, have a distinct chirality, and both chiralities are degenerate in energy.
Crystallization of skyrmions occurs when the inter-skyrmion distance is sufficiently reduced so that the repulsive
skyrmion-skyrmion interaction leads to a packing in a hexagonal lattice.27 -- 29 A skyrmion crystal phase (SkX) has
been observed both in thin films of chiral magnets16,30 and magnetic multilayer with perpendicular anisotropy31.
In chiral magnets with very low Curie temperatures, the SkX phase is stabilized at temperatures well below room
temperature and requires an external magnetic field (of the order of 1 T 1,3) perpendicular to the film plane. In case
of magnetic thin films as well, a magnetic field perpendicular to the film plane is required for the strip domain ground
state to evolve into a (chiral) bubble lattice8,10 -- 12,32.
Better control of the physical properties of magnetic skyrmions, such as their stability, size, chirality, etc., is not
only of fundamental interest but also crucial for the application of skyrmions in spintronics. Some recent research
has focused on this control. Small individual skyrmions (with diameters smaller than 100 nm) were stabilized at
room temperature by additive interfacial DMIs23,24 in PtCoIr multilayers32. Nucleation of magnetic skyrmions
with a wide range of sizes and ellipticities was recently observed in a wedge-shaped FeGe nanostripe33. Montoya
et. al. experimentally demonstrated34 that the stability and size of skyrmions originating from dipolar interaction
7
1
0
2
p
e
S
0
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
8
4
0
0
0
.
0
1
7
1
:
v
i
X
r
a
2
can be controlled by tuning the magnetic properties such as the magnitude of the perpendicular uniaxial and shape
anisotropies of FeGd multilayers.
In addition to chiral magnets and transition-metal multilayers, stable skyrmions may also be hosted in centrosym-
metric systems including various multiferroic materials35 -- 39. An inherent advantage of multiferroic materials is that
they are characterized by more than one order parameter, which may impart unique features to the skyrmions. For
example, helicity reversal inside skyrmions was observed in Sc-doped hexagonal barium ferrite36, a multiferroic with
tunable magnetic anisotropy. More recently, a room temperature SkX state was observed in thin films of the centro-
symmetric material Ni2MnGa39 in the absence of DMI. Surprisingly, in that work all skyrmions in each realization
of a SkX state had the same chirality, but different realizations may exhibit different chiralities, in contrast with the
SkXs stabilized via DMI and dipolar interactions. The degeneracy of the different chiralities opens up the possibility
of controlling and altering the chirality of such SkXs, which may enable new applications. Phatak and coworkers
associated the formation of this type of SkX with the geometric confinement of magnetic structures by narrow twin
variants39 with alternating in-plane and out-of-plane uniaxial magnetic anisotropy.
Inspired by these experimental works, we investigate theoretically the energy landscape of various magnetic states
in a ferromagnetic thin film that arises from the competition between exchange, shape, and modulated uniaxial
anisotropy with a goal of understanding the phase diagram and under what conditions a Skx can be stabilized by
these competing energy terms. We generalize the Ginzburg-Landau (GL) theory40 for an Ising ferromagnet to take
into account the general three dimensional magnetization in a ferromagnetic thin film. In particular, we will consider
a novel uniaxial anisotropy with periodic in-plane to out-of-plane spatial variation of the easy axis, which can be
realized in a multiferroic material such as Ni2MnGa39. Intuitively, this form of anisotropy favors a helical ground
state as well as a canted-spin state with an antiferromagnetic arrangement in consecutive in-plane anisotropy twins, as
shown schematically in Fig. 1; we shall show that the SkX can form during the transition between these two dominant
magnetic phases. We will discuss the stability of the SkX phase as a function of temperature and external magnetic
field. Furthermore, we derive an explicit expression for the anisotropy energy density of the SkX. This allows us to
determine the size-dependence of the skyrmions on the ratio of the exchange length and the period of the spatial
variation of the anisotropy, which is a hallmark of this unconventional SkX.
FIG. 1: Schematics of three typical magnetic states in a thin film where the anisotropy exhibits periodic spatial variation of
easy axis (EA) from in-plane (denoted by ↔) to out-of-plane (denoted by (cid:12)⊗).
II. GINZBURG-LANDAU MODEL
We assume that the film lies in the x − y plane, and that the film thickness is sufficiently thin so that the magneti-
zation density M is uniform along the z-direction and hence is a function only of x and y, i.e., M = M (x, y). In the
GL theory, the spatial average of the total magnetic free energy Ftot of a ferromagnetic thin film of area S may be
written as
(1)
where m = M/M0 with M = M (T ) the local magnetization density at temperature T and M0 = M(T → 0), t
and u are GL parameters that are in general functions of temperature and external magnetic field, µ0 is the magnetic
(cid:90)
(cid:104)
Ftot = S−1
Aex (∇m)2 + tm2 + u(cid:0)m2(cid:1)2
z + fa (m)(cid:3) ,
d2x
−µ0m · HM0 + Kdm2
permeability, and Kdm2
z denotes the demagnetizing energy density in the thin film approximation41.
We shall draw particular attention to the anisotropy energy density fa (m). The uniaxial magnetic anisotropy with
spatially varying easy axis may be modeled as
2 µ0M 2
0 m2
z = 1
fa [m (x)] = −Ku
z + κ− (x) m2
y
(cid:2)κ+ (x) m2
(cid:3) ,
3
(2)
(cid:104)(cid:12)(cid:12)(cid:12)cos
(cid:16) πx
wt
(cid:17)(cid:12)(cid:12)(cid:12) ± cos
where κ±(x) ≡ 1
the anisotropy.
2
(cid:17)(cid:105)
(cid:16) πx
wt
with wt is the twin width, and Ku (> 0) characterizes the magnitude of
A generalized spatial profile of the magnetization of a skyrmion lattice can be approximated as a superposition of
three spin helices2,3
m (r) = [m0 + mi,⊥ cos (ki · r)] z
(cid:16)
(cid:17)
+ mi,(cid:107)
z × ki
sin (ki · r) ,
(3)
where m0 is the uniform magnetization induced by the external magnetic field perpendicular to the film plane,
mi,⊥ and mi,(cid:107) are the out-of-plane and in-plane components of the magnetization, and we use Einstein's summation
convention over repeated indices. The wave vectors of the three helices are all in the plane of the layer and form an
angle of 120◦ with each other; explicitly, we choose k1 = qx, k2 =
q, and
ki = ki/ki is the unit vector of ki. The general spatial profile given by Eq. (3) can be reduced to multiple magnetic
states including: (i) Helix (single-q state) when m1,(cid:107) ≈ m1,⊥ (cid:54)= 0 and mi,(cid:107) = mi,⊥ = 0 (i = 2, 3); (ii) Stripe domain
when only m1,⊥ is nonzero; (iii) (nonchiral) bubble lattice when mi,⊥ (cid:54)= 0 and mi,(cid:107) = 0 (i = 1, 2, 3); (iv) SkX (triple-q
state) when mi,(cid:107) ≈ mi,⊥ (cid:54)= 0 and mi,⊥mi,(cid:107) (i = 1, 2, 3) have the same sign so that the three superimposed helices
exhibit the same chirality. Other magnetic states are possible as we will mention below.
(cid:16)− 1
2 x − √
3
2 y
(cid:16)− 1
q and k3 =
√
3
2 y
2 x +
(cid:17)
(cid:17)
To simplify the problem without loss of generality, we shall assume that the magnitude of the magnetization has
mirror symmetry about the y = 0 plane, and let m2,⊥ = m3,⊥, and m2,(cid:107) = m3,(cid:107) . By placing Eq. (3) in Eq. (1) and
carrying out the integration in Eq. (1), one can obtain the spatially averaged free energy density. The expression for
this is complicated and not very instructive, and is given in the supplementary material.
42,43, i.e., δf = χ(cid:0)m2 − m2
The global minimum of the magnetic free energy density can be computed with the following six variational
parameters: m0, m1,(cid:107), m2,(cid:107), m1,⊥, m2,⊥ and q. To specify the two GL parameters t and u, we introduce an extra
positive definite free energy density term that arises when the magnetization density deviates from its uniform bulk
. Here, χ is a positive definite parameter which in principle relies on
saturation value Ms
the magnetic property of the material, and the reduced saturation magnetization ms(≡ Ms/M0) can be determined
by self-consistently solving the equation Ms = M0BS (T, Hz) in the mean field approximation with BS (T, Hz) the
s and u = χ. Just below Tc, the mean field equation gives ms ∼
Brillouin function. We thus identify t = −2χm2
(1 − T
)1/2, by which one recovers t = kB (T − Tc) /2v0 in the case of a 1-D Ising ferromagnet40 when χ = kBTc/4v0.
We also impose the constraint that the spatially averaged magnetization modulus be no greater than the saturation
magnetization, i.e., S−1(cid:82) d2rm2 ≤ m2
(cid:1)2
Tc
s
s.
III. RESULTS AND DISCUSSION
In Fig. 2, we show the phase diagram in the temperature-field plane, where the field is applied out-of-plane, for
several different magnitude of the demagnetizing and anisotropy energy density coefficients, i.e., Kd and Ku. We note
that in the absence of uniaxial anisotropy, only the uninteresting uniform magnetized state is observed (not shown).
Once the anisotropy is turned on, the helix state prevails at low magnetic fields because of the alternating in-plane
and out-of-plane easy axis variants. When the out-of-plane magnetic field Hz increases, the negative z-component of
the magnetization diminishes in a manner such that magnetizations with an out-of-plane component start to swirl
around in order to lower the exchange energy, similar to the case in chiral magnets3. This gives birth to the SkX
phase as seen in Figs 2 (a) and (b). We also note that, for a given magnitude of the anisotropy, the SkX phase region
is more extended for larger Kd since then a greater magnetic field is needed to overcome the demagnetizing field.
Further increasing the magnetic field leads to the canted-spin state with a large out-of-plane magnetization component
parallel to the magnetic field together with small in-plane magnetization components forming an antiferromagnetic
arrangement along the x-axis. Also, for a given magnitude of the magnetistatic energy Kd, a larger anisotropy lowers
the energy barrier between the helix and canted-spin states and hence makes the SkX phase unstable, as indicated in
Figs. 2 (a) and (c).
4
(a) Ku = Ku0 & Kd = Kd0
(b) Ku = Ku0 & Kd = 1.5 Kd0
(c) Ku = 1.5 Ku0 & Kd = Kd0
FIG. 2: Phase diagram in the plane of the out-of-plane magnetic field hz(≡ M0Hz) and temperature T . Material parameters
used in the calculation (corresponding to Ni2MnGa44 -- 47): Aex = 1.0× 10−11 J/m, M0 = 6.0× 105 A/m, Ku0 = 2.5× 105 J/m3
and wt = 50 nm. Small variations in the parameters may change the phase boundary, but the topology of the phase diagrams
remains the same.
FIG. 3: Skyrmion diameter as a function of exchange length for a thin film with total of 50 twin variants, i.e., Nt = 50 and
fixed width of twin width of wt = 50 nm. The inset shows the coefficient of anisotropy energy density fu as a function of the
diameter of a skyrmion Dsk(= 2π
q ).
Next, we show that the the size of the skyrmions depends strongly on the magnitude of the anisotropy as well as
on the width of the twin variant. In order to see this, let us focus on the free energy density of a standard SkX state
given by
¯fsk (q) =(cid:0)t + Kd − π−1Ku
(cid:1) m2
(cid:2)fex (q) + fu (q) + 48um2
0 + um4
0 − hzm0
0 + 6πKd
(cid:3) m2
sk
+
1
4π
+ 9um0m3
sk +
51
4
um4
sk ,
(4)
where we have set mi,(cid:107) = mi,⊥ = msk (i = 1, 2, 3) in Eq. (3). The q-dependence of the free energy enters through the
coefficients of the exchange and anisotropy energy densities given by fex (q) = 12πAexq2 and
fu (q) = −Ku [9 − 2ζNt (2wtq) + 2ηNt (2wtq)
−ζNt (wtq) + 4ηNt (wtq)] ,
(5)
respectively, where ηNt (x) ≡ sin[(Nt−1)x]+sin(x)
π )2] sin( x
2 )
variants which is taken to be an even number without loss of generality [see the supplementary material for a detailed
derivation of fu(q)].
with Nt the total number of twin
and ζNt (x) ≡
4Nt[1−( x
sin[Ntx]
4Nt[1−( x
π )2] sin( x
2 )
The diameter of a skyrmion can thus be determined via Dsk = 2π
qm
, where qm is the wave vector obtained by
5
(cid:113) Aex
minimizing fq = fex + fu. In Fig. 3, we show Dsk as a function of the exchange length lex = 2π
which is the
length scale of a 360◦ Bloch domain. When lex is greater than the width of the twin wt (corresponding to small
anisotropy Ku for fixed exchange stiffness), the size of the skyrmion is comparable to and eventually approaches the
lateral size of the film (i.e., L = Ntwt = 2.5 µm for Nt = 50 and wt = 50 nm); in other words, the system is essentially
in a uniformly magnetized state in the small anisotropy regime. In the intermediate anisotropy regime where lex (cid:46) wt,
a plateau of Dsk = 4wt appears, which agrees with the experimental observation of the the close-packed hexagonal
skyrmion lattice in the narrow twinned region of Ni2MnGa. Finally, in the large anisotropy limit where the exchange
length is much smaller than the twin width, another plateau of Dsk = 2wt appears. These two plateaus result from
the two local minimum in the anisotropy density characterized by the function fu given by Eq. (5) at Dsk = 2wt and
Dsk = 4wt, as shown by the inset of the Fig. 3.
Ku
Before we close this section, we briefly discuss the chirality and magnetic field dependence of the SkX. It was
observed experimentally that the Ni2MnGa crystal with inversion symmetry (and thus no DMI) still may host a SkX
with a single chirality, in contrast to the SkX stabilized by long range dipolar interaction for which the chirality of
each individual skyrmion could in principle be completely random. By adopting our Ansatz magnetization profile,
we presumed all skyrmions have the same chirality, but our analysis provides several hints about the origin of the
fixed chirality of the SkX in this system. First, as shown in the phase diagram (Fig. 2), the helix state is favored
at low magnetic fields. Continuous transition from the helix state to SkX state necessitates a single chirality of the
SkX even in the absence of the DMI, since the in-plane magnetization orientation must conform to that of the helix
in order to lower the exchange energy cost during the transition. Second, as the separation distance between two
neighboring skyrmions becomes shorter, same chirality becomes energetically preferable considering that the in-plane
magnetization component along a line connecting the centers of the two skyrmions with opposite chiralities would
carry higher order harmonics and thus results in higher exchange energy.
We finally comment on the dependence of the stability of the SkX hosted in the Ni2MnGa system on the exter-
nal magnetic field. Based on our theoretical model, a small but finite magnetic field is required to overcome the
demagnetizing field and stabilizing the SkX phase; the magnetic field is of the order of 50 Oe as estimated for an
Ni2MnGa ultrathin film of 10 monolayers at room temperature, where hzv0/kBTc (cid:39) 0.05, v0 = a2
md with the mag-
netic spacing am ∼ 10 A47,48 and d the thickness. Experimentally, SkX was observed even in the absence of external
magnetic field39. The observed (metastable) zero-field SkX may arise from the history-dependence of the system, e.g.,
a quenched SkX. Furthermore, we note that Ni2MnGa is a ferromagnetic shape memory alloy, and there is a strain
energy and an associated internal magnetic field induced by the magneto-elastic coupling involved in the martensite
transformation; this is not considered explicitly in our present model, but would be interesting for future studies,
as stabilization of skyrmions with zero magnetic field will be beneficial for the application of skyrmions in future
electronic devices.
IV. SUMMARY AND OUTLOOK
In this work, we generalized the Ginzburg-Landau theory for Ising ferromagnets to include a general continuum
magnetization profile that encapsulates various magnetic configurations with three dimensional magnetization direc-
tions. We demonstrated that stabilization of room temperature SkX can be facilitated by geometric modulation of the
uniaxial anisotropy easy axis in nonchiral materials with inversion symmetry. Remarkably, the size of the skyrmions
can be tailored by the period of the spatial modulation of the anisotropy, in contrast with skyrmions originating from
dipolar interaction and DMI. Such novel uniaxial anisotropy was realized experimentally in a multiferroic material
Ni2MnGa with narrow twin variants for which the anisotropy easy axis is rotated by 90◦ across the twin boundary,
and our work explains the underlying physics that gives rise to the observed SkX in Ni2MnGa.
Our model can be further generalized to take into account other magnetic interactions such as the DMI as well
as various forms of geometric confinement on magnetic structures. It will also be very intriguing to investigate the
transport and dynamic behaviors of skyrmions in the presence of geometric modulation of the anisotropy. For example,
with the nonuniform anisotropy that we considered here, one would expect the skyrmions to respond rather differently
when they are driven along and perpendicular to the twin boundaries. It may also be possible to control and alter
the chirality of the SkX using, e.g., strain or electrical currents. These centrosymmetric SkXs may therefore enable
interesting applications in spintronics.
Work by S.S.-L.Z, C.P, A.P.-L, O.H was supported by Department of Energy, Office of Science, Materials Sciences
and Engineering Division. Initial work by S.S.-L.Z was also partly supported by NSF Grants DMR-1406568.
Acknowledgements
6
Appendix A: General expression of the spatially averaged free energy density
By placing the general magnetization profile (Eq. (3) in the main text) in the magnetic free energy expression given
by Eq. (1) in the main text, we obtain the following spatially average free energy density
0 + um4
¯f =(cid:0)t + Kd − π−1Ku
0
(cid:1) m2
(cid:8)π(cid:0)Aexq2 + t + 2um2
(cid:8)π(cid:0)Aexq2 + t + 6um2
(cid:8)4π(cid:0)Aexq2 + t + 2um2
(cid:8)π(cid:0)Aexq2 + t + 6um2
(cid:104)
(cid:104)
(cid:16)
1,⊥ + 2m2
1,(cid:107) + 3m4
3m4
1,(cid:107)m2
2,(cid:107) + 2m2
1,⊥m2
m2
+
+
+
+
1
2π
1
2π
1
4π
1
π
+
u
8
+ 12
+ um0
2m1,(cid:107)m2,(cid:107)m2,⊥ + m1,⊥
0 + Kd
1,(cid:107)
0 − hzm0
(cid:1) − Ku [1 − ζNt (2wtq)](cid:9) m2
(cid:1) − Ku [1 + ηNt (2wtq)](cid:9) m2
(cid:1) − Ku [1 − ζNt (wtq)](cid:9) m2
(cid:1) − Ku [1 + ηNt (wtq)](cid:9) m2
(cid:16)
(cid:16)
(cid:17)(cid:105)
1,⊥ + 12m4
2,(cid:107) + 18m4
2,(cid:107) + 6m2
2,⊥ + 12m2
(cid:17)(cid:105)
(cid:17)
2,⊥
2,⊥
m2
2,(cid:107)
0
m2
2,(cid:107)m2
1,⊥ + m2
2,⊥m2
1,(cid:107)
+ 8
1,(cid:107)m2
2,⊥
0 + Kd
1,⊥
2,(cid:107)m2
2,⊥
.
(A1)
where hz = M0Hz, and we have assumed, for simplicity without losing generality, that the magnitude of the mag-
netization has mirror symmetry about the y = 0 plane, and let m2,⊥ = m3,⊥, and m2,(cid:107) = m3,(cid:107); the two functions
ηNt (wtq) and ζNt (wtq), with Nt the total number of twin layers, are derived from the spatial integral of the anisotropy
energy density. We will present the detailed derivation of the anisotropy free energy density term in the next section.
Appendix B: Derivation of the anisotropy free energy density term
Let us consider the uniaxial magnetic anisotropy of the form
with
and
K⊥ (x) =
1
2
Ku
K(cid:107) (x) =
1
2
Ku
fa [m (x)] = −K⊥ (x) m2
x
+
z − K(cid:107) (x) m2
(cid:12)(cid:12)(cid:12)(cid:12)cos
(cid:19)
(cid:19)(cid:12)(cid:12)(cid:12)(cid:12) − cos
(cid:18) πx
(cid:18) πx
(cid:19)(cid:12)(cid:12)(cid:12)(cid:12)(cid:21)
(cid:19)(cid:21)
wt
wt
,
cos
(cid:20)
(cid:20)(cid:12)(cid:12)(cid:12)(cid:12)cos
(cid:18) πx
(cid:18) πx
wt
wt
(A2)
(A3)
(A4)
where the prefactor Ku measures the magnitude of the anisotropy energy density, wt is the period of the spatial
variation of the anisotropy (or the width of the twin).
7
For the interesting case of q > π/L with L the side length of the rectangular film, the spatially averaged anisotropy
energy can be calculated by the following piece-wise integration
¯fa = −
√
3q
4π
¯fa = − Ku
4πNt
(cid:90) 2π√
3q
− 2π√
3q
Nt/2−1(cid:88)
n=0
where an (x) = cos (2nx) cos(cid:0) x
ing series are given as follows
and
l(cid:88)
n=0
bn (x) =
n=0
2
dy
n=0
2 )wt
2 )wt
4m2
dx cos
(cid:40)
(2n− 1
(cid:34)(cid:90) (2n+ 1
0 + 2m2
Ku
Ntwt
1,⊥ + 4m2
2,⊥ + 2m2
Nt/2−1(cid:88)
(cid:16)
(cid:16)
(cid:1) and bn (x) = cos [(2n + 1) x] cos(cid:0) x
l(cid:88)
l(cid:88)
(cid:17)
(cid:1)2 − 1
(cid:17)
(cid:16) x
4m0m1,⊥ + 2m2
(cid:0) wtq
an (x) = cos
(cid:16) x
cos [(2n + 1) x] cos (x/2) = cos
an (wtq)
−2
2,⊥
n=0
2
π
+
2
2
(cid:17)
2
(cid:18) πx
(cid:19)
wt
(cid:90) (2n+ 3
2 )wt
(cid:18) πx
(cid:19)
(cid:35)
,
wt
m2
y
2 )wt
2m2
(A5)
(2n+ 1
dx cos
1,(cid:107)bn (2wtq)
z −
m2
(cid:17)
(cid:0) 2wtq
(cid:1), and the results of the summation of correspond-
(cid:0) 2wtq
(cid:1)2 − 1
,
(cid:1)2 − 1
1 −(cid:0) wtq
1,⊥an (2wtq)
2,(cid:107)bn (wtq)
− m2
(cid:1)2
(A6)
m2
+
π
π
π
1,(cid:107) + m2
2,(cid:107)
csc (wtq) cos (lwtq) sin [(l + 1) wtq]
(A7)
csc (x) cos [(l + 1) x] sin [(l + 1) x] .
(A8)
where we have assumed Nt being an large even integer number. By carrying out the integration, we obtain
Placing Eqs. (A7) and (A8) in Eq. (A6), we obtain
(cid:8)4m2
¯fa = − Ku
4π
1,(cid:107) [1 − ζNt (2wtq)] + m2
0 + 2m2
+2m2
1,⊥ [1 + ηNt (2wtq)] + 4m2
(cid:111)
2,(cid:107) [1 − ζNt (wtq)] − 8m0m1,⊥ζNt (wtq)
2,⊥ [1 + ηNt (wtq)]
where
and
ζNt (wtq) =
π2 sin (Ntwtq)
4Nt (π2 − q2w2
t ) sin(cid:0) wtq
(cid:1)
t ) sin(cid:0) wtq
(cid:1) .
ηNt (wtq) = π2 sin [(Nt − 1) wtq] + sin (wtq)
4Nt (π2 − q2w2
2
2
,
(A9)
(A10)
(A11)
2 and ηNt (x) ≤ 1
Note that ζNt (x) ≤ 1
2 , and the cross-term of m0m1,⊥ in Eq. (A9) vanishes when one carries out
the spatial integration with an overall sinusoidal envelop function with the period of the film length on top of the
magnetization profile [corresponding to several replica of the entire thin film]. Taking this into account, we arrive at
the final expression of the anisotropy energy density in the presence of the geometric confinement with only quadratic
terms, i.e.,
¯fa = − Ku
4π
1,(cid:107) [1 − ζNt (2wtq)] + m2
(cid:111)
1,⊥ [1 + ηNt (2wtq)] + 4m2
2,(cid:107) [1 − ζNt (wtq)]
0 + 2m2
+2m2
2,⊥ [1 + ηNt (wtq)]
.
(A12)
(cid:8)4m2
The above expression is valid when q > π/Li, where Li (i = x or y) are side lengths of the rectangular thin film.
∗ Electronic address: shulei.zhang@anl.gov
8
1 A. Fert, N. Reyren, and V. Cros, Nat. Rev. Mater. 2, 17031 (2017).
2 S. Muhlbauer, B. Binz, F. Jonietz, C. Pfleiderer, A. Rosch, A. Neubauer, R. Georgii, and P. Boni, Science 323, 915 (2009).
3 N. Nagaosa and Y. Tokura, Nat Nano 8, 899 (2013).
4 F. Hellman, A. Hoffmann, Y. Tserkovnyak, G. S. D. Beach, E. E. Fullerton, C. Leighton, A. H. MacDonald, D. C. Ralph,
D. A. Arena, H. A. Durr, P. Fischer, J. Grollier, J. P. Heremans, T. Jungwirth, A. V. Kimel, B. Koopmans, I. N. Krivorotov,
S. J. May, A. K. Petford-Long, J. M. Rondinelli, N. Samarth, I. K. Schuller, A. N. Slavin, M. D. Stiles, O. Tchernyshyov,
A. Thiaville, and B. L. Zink, Rev. Mod. Phys. 89, 025006 (2017).
5 S. Rohart, J. Miltat, and A. Thiaville, Phys. Rev. B 93, 214412 (2016).
6 T. Okubo, S. Chung, and H. Kawamura, Phys. Rev. Lett. 108, 017206 (2012).
7 S. Heinze, K. von Bergmann, M. Menzel, J. Brede, A. Kubetzka, R. Wiesendanger, G. Bihlmayer, and S. Blugel, Nat Phys
7, 713 (2011).
8 W. Jiang, P. Upadhyaya, W. Zhang, G. Yu, M. B. Jungfleisch, F. Y. Fradin, J. E. Pearson, Y. Tserkovnyak, K. L. Wang,
O. Heinonen, S. G. E. te Velthuis, and A. Hoffmann, Science 349, 283 (2015).
9 O. Heinonen, W. Jiang, H. Somaily, S. G. E. te Velthuis, and A. Hoffmann, Phys. Rev. B 93, 094407 (2016).
10 S. Woo, K. Litzius, B. Kruger, M.-Y. Im, L. Caretta, K. Richter, M. Mann, A. Krone, R. M. Reeve, M. Weigand, P. Agrawal,
I. Lemesh, M.-A. Mawass, P. Fischer, M. Klaui, and G. S. D. Beach, Nat Mater 15, 501 (2016).
11 O. Boulle, J. Vogel, H. Yang, S. Pizzini, D. de Souza Chaves, A. Locatelli, T. O. Mentes, A. Sala, L. D. Buda-Prejbeanu,
O. Klein, M. Belmeguenai, Y. Roussign´e, A. Stashkevich, S. M. Ch´erif, L. Aballe, M. Foerster, M. Chshiev, S. Auffret, I. M.
Miron, and G. Gaudin, Nat Nano 11, 449 (2016).
12 S. Zhang, A. K. Petford-Long, and C. Phatak, Sci. Rep. 6, 31248 (2016).
13 Y. S. Lin, P. J. Grundy, and E. A. Giess, Appl. Phys. Lett. 23, 485 (1973), http://dx.doi.org/10.1063/1.1654968 .
14 S. Takao, J. Magn. Magn. Mater. 31, 1009 (1983).
15 A. P. Malozemoff and J. C. Slonczewski, Magnetic Domain Walls in Bubble Materials, edited by R. Wolfe (Academic Press,
1979).
16 B. Lebech, P. Harris, J. S. Pedersen, K. Mortensen, C. Gregory, N. Bernhoeft, M. Jermy, and S. Brown, J. Magn. Magn.
Mater. 140, 119 (1995).
17 A. Bauer and C. Pfleiderer, Phys. Rev. B 85, 214418 (2012).
18 S. V. Grigoriev, D. Chernyshov, V. A. Dyadkin, V. Dmitriev, S. V. Maleyev, E. V. Moskvin, D. Menzel, J. Schoenes, and
H. Eckerlebe, Phys. Rev. Lett. 102, 037204 (2009).
19 M. Uchida, N. Nagaosa, J. P. He, Y. Kaneko, S. Iguchi, Y. Matsui, and Y. Tokura, Phys. Rev. B 77, 184402 (2008).
20 X. Z. Yu, N. Kanazawa, Y. Onose, K. Kimoto, W. Z. Zhang, S. Ishiwata, Y. Matsui, and Y. Tokura, Nat Mater 10, 106
(2011).
21 H. Wilhelm, M. Baenitz, M. Schmidt, U. K. Rossler, A. A. Leonov, and A. N. Bogdanov, Phys. Rev. Lett. 107, 127203
(2011).
22 K. Shibata, Z. X. Yu, T. Hara, D. Morikawa, N. Kanazawa, K. Kimoto, S. Ishiwata, Y. Matsui, and Y. Tokura, Nat Nano
8, 723 (2013).
23 I. Dzyaloshinsky, J Phys Chem Solids 4, 241 (1958).
24 T. Moriya, Phys. Rev. 120, 91 (1960).
25 S. Emori, U. Bauer, S.-M. Ahn, E. Martinez, and G. S. D. Beach, Nat Mater 12, 611 (2013).
26 K.-S. Ryu, L. Thomas, S.-H. Yang, and S. Parkin, Nat Nano 8, 527 (2013).
27 W. L. McMillan, Phys. Rev. B 12, 1187 (1975).
28 A. Bocdanov and A. Hubert, physica status solidi (b) 186, 527 (1994).
29 A. O. Leonov, T. L. Monchesky, N. Romming, A. Kubetzka, A. N. Bogdanov, and R. Wiesendanger, New J. Phys. 18,
065003 (2016).
30 A. Bauer and C. Pfleiderer, Phys. Rev. B 85, 214418 (2012).
31 S. A. Montoya, S. Couture, J. J. Chess, J. C. T. Lee, N. Kent, D. Henze, S. K. Sinha, M.-Y. Im, S. D. Kevan, P. Fischer,
B. J. McMorran, V. Lomakin, S. Roy, and E. E. Fullerton, Phys. Rev. B 95, 024415 (2017).
32 C. Moreau-Luchaire, C. Moutas, N. Reyren, J. Sampaio, C. A. F. Vaz, N. Van Horne, K. Bouzehouane, K. Garcia, C. Der-
anlot, P. Warnicke, P. Wohlhuter, J.-M. George, M. Weigand, J. Raabe, V. Cros, and A. Fert, Nat Nano 11, 444 (2016).
33 C. Jin, Z.-A. Li, A. Kov´acs, J. Caron, F. Zheng, F. N. Rybakov, N. S. Kiselev, H. Du, S. Blugel, M. Tian, Y. Zhang,
M. Farle, and R. E. Dunin-Borkowski, Nat Commun 8, 15569 (2017).
34 S. A. Montoya, S. Couture, J. J. Chess, J. C. T. Lee, N. Kent, D. Henze, S. K. Sinha, M.-Y. Im, S. D. Kevan, P. Fischer,
B. J. McMorran, V. Lomakin, S. Roy, and E. E. Fullerton, Phys. Rev. B 95, 024415 (2017).
35 S. Seki, X. Z. Yu, S. Ishiwata, and Y. Tokura, Science 336, 198 (2012).
36 X. Yu, M. Mostovoy, Y. Tokunaga, W. Zhang, K. Kimoto, Y. Matsui, Y. Kaneko, N. Nagaosa, and Y. Tokura, PNAS 109,
8856 (2012).
37 M. C. Langner, S. Roy, S. K. Mishra, J. C. T. Lee, X. W. Shi, M. A. Hossain, Y.-D. Chuang, S. Seki, Y. Tokura, S. D.
Kevan, and R. W. Schoenlein, Phys. Rev. Lett. 112, 167202 (2014).
38 J. S. White, K. Prsa, P. Huang, A. A. Omrani, I. Zivkovi´c, M. Bartkowiak, H. Berger, A. Magrez, J. L. Gavilano, G. Nagy,
J. Zang, and H. M. Rønnow, Phys. Rev. Lett. 113, 107203 (2014).
39 C. Phatak, O. Heinonen, M. D. Graef, and A. Petford-Long, Nano Lett. 16, 4141 (2016).
40 T. Garel and S. Doniach, Phys. Rev. B 26, 325 (1982).
41 K. J. Harte, J. Appl. Phys. 39, 1503 (1968).
42 J. Wang and J. Zhang, Int. J. Solids Struct. 50, 3597 (2013).
43 C. M. Landis, J. Mech. Phys. Solids 56, 3059 (2008).
44 R. Tickle and R. James, J. Magn. Magn. Mater. 195, 627 (1999).
45 O. Heczko, K. Jurek, and K. Ullakko, J. Magn. Magn. Mater. 226, 996 (2001).
46 P. Wu, X. Ma, J. Zhang, and L. Chen, Philos. Mag. 91, 2102 (2011).
47 T. Sakon, Y. Adachi, and T. Kanomata, Metals 3, 202 (2013).
48 L. Righi, F. Albertini, L. Pareti, A. Paoluzi, and G. Calestani, Acta Mater. 55, 5237 (2007).
9
10
11
|
1508.05770 | 2 | 1508 | 2015-11-22T07:45:03 | Broadband architecture for galvanically accessible superconducting microwave resonators | [
"cond-mat.mes-hall"
] | In many hybrid quantum systems, a superconducting circuit is required that combines DC-control with a coplanar waveguide (CPW) microwave resonator. The strategy thus far for applying a DC voltage or current bias to microwave resonators has been to apply the bias through a symmetry point in such a way that it appears as an open circuit for certain frequencies. Here, we introduce a microwave coupler for superconducting CPW cavities in the form of a large shunt capacitance to ground. Such a coupler acts as a broadband mirror for microwaves while providing galvanic connection to the center conductor of the resonator. We demonstrate this approach with a two-port $\lambda/4$-transmission resonator with linewidths in the MHz regime ($Q\sim10^3$) that shows no spurious resonances and apply a voltage bias up to $80$ V without affecting the quality factor of the resonator. This resonator coupling architecture, which is simple to engineer, fabricate and analyse, could have many potential applications in experiments involving superconducting hybrid circuits. | cond-mat.mes-hall | cond-mat | a
Broadband architecture for galvanically accessible superconducting
microwave resonators
Sal J. Bosman,1 Vibhor Singh,1 Alessandro Bruno,1, 2 and Gary A. Steele1
1)Kavli Institute of NanoScience, Delft University of Technology,
PO Box 5046, 2600 GA, Delft, The Netherlands.
2)Qutech Advanced Research Center, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft,
The Netherlands.
(Dated: 24 November 2015)
In many hybrid quantum systems, a superconducting circuit is required that combines DC-control with a
coplanar waveguide (CPW) microwave resonator. The strategy thus far for applying a DC voltage or current
bias to microwave resonators has been to apply the bias through a symmetry point in such a way that it
appears as an open circuit for certain frequencies. Here, we introduce a microwave coupler for superconducting
CPW cavities in the form of a large shunt capacitance to ground. Such a coupler acts as a broadband mirror
for microwaves while providing galvanic connection to the center conductor of the resonator. We demonstrate
this approach with a two-port λ/4-transmission resonator with linewidths in the MHz regime (Q ∼ 103) that
shows no spurious resonances and apply a voltage bias up to 80 V without affecting the quality factor of
the resonator. This resonator coupling architecture, which is simple to engineer, fabricate and analyse, could
have many potential applications in experiments involving superconducting hybrid circuits.
Embedding a quantum system, such as a qubit, in a
microwave resonator is an attractive and commonly used
approach. Resonators provide isolation that shields the
system from environmental noise and can controllably
inhibit spontaneous decay. At millikelvin temperatures,
microwave resonators are in their ground state, free of en-
tropy, while still providing microwave frequency access to
read-out and manipulate quantum states. There is a wide
range of hybrid systems exploring new quantum phenom-
ena and technologies that require a microwave resonator
that also offers DC-access to the device, including cou-
pling mechanical resonators to qubits1,2, microwave stor-
age and conversion circuits3, Josephson and quantum dot
radiation4–7, spin qubits8, circuits coupled to ultra cold
atoms9, and more10. A cavity with galvanic access al-
lows the possibility to measure simultaneously a device’s
DC response, such as a current-voltage curve, and its
microwave response, like emitted radiation or scattering
characteristics. Such a setup could form a bridge between
DC quantum transport measurements and all-microwave
setups employed in circuit QED, with a wide range of ap-
plications from the study of topological and other exotic
junctions11, to superconducting molecular junctions12, to
carbon nanotubes13,14.
While attractive for many applications, applying a
DC current or voltage bias to a superconducting res-
onator without sacrificing its quality factor is a non-
trivial challenge15–18. The first approach to incorporate
DC-control into a superconducting microwave resonator
was to access the resonator galvanically at a voltage node
with a bias line made from a λ/2-section of transmission
line15. If the frequencies of resonator and the bias line
are perfectly matched, then the bias line loads the circuit
with an infinite impedance (an effective open), resulting
in no leakage of the microwave field on resonance. How-
ever, off-resonant circuit excitations, such as a detuned
qubit, are free to decay into the bias-line. This issue
FIG. 1. (a) Schematic of a generic two-port cavity for con-
fining electromagnetic fields using impedance mismatches as
mirrors. The fields inside the cavity are isolated from the
input-output fields by local impedance mismatches Z1 and
Z2. (b) For a microwave CPW, mirrors can be implemented
by incorporating capacitor or inductor elements either in se-
ries with the center conductor or from the center conductor to
ground. This defines either an quasi-open or -short boundary
condition for microwaves and a conducting or non-conducting
path for DC signals. (c) Schematic of a cavity design imple-
mented here providing DC access to the center conductor of
the cavity using a shunt-capacitor as a mirror at port 2.
was addressed recently18 using a reflective T-filter, mak-
ing the suppression band a few GHz wide and reaching
quality factors ∼ 105, at the cost of increased complex-
ity. The insertion of the bias into a symmetry point,
typically breaking ground plane symmetry, makes these
designs susceptible to slot-line modes and spurious res-
onances. Particularly for more complex circuits, these
resonances can complicate design, operation and analy-
sis of the device. In a third approach17, a lumped element
resonator circuit was split symmetrically in two such that
a DC voltage can be applied to the two halves using iso-
lated ground planes without any radiation losses, leading
to high quality factors for perfectly balanced designs.
Here, we explore a different approach in which we re-
2
FIG. 2. Device: (a) Optical microscope image of the complete λ/4-transmission cavity. Port 1, on the left, is coupled with
a gap capacitor, and on the right, port 2, is coupled through a shunt capacitor. (b) Shows a zoom in of the gap capacitor,
(c) a zoom in on the shunt capacitor, with black (sapphire), blue (Si3N4), beige (MoRe). (d) Shows an overview of the shunt
capacitor, (e) schematic top-view (above) and cross section (below) of the shunt capacitor. The center conductor is depicted in
blue, the ground plane in red and the top-plate of the capacitive coupler in green. (f) Shows the equivalent circuit of the shunt
capacitor.
place the typical gap capacitor used as an input coupler in
CPW cavities with a large shunt capacitance to ground.
Doing so, we achieve a highly reflective microwave mir-
ror in which the center conductor of the waveguide is still
galvanically connected to the input line, allowing the ap-
plication of a DC current or voltage. Such a design has
several advantages: in contrast to resonant filter designs,
the reflectivity is broadband up to the self-resonance fre-
quency of the shunt capacitor. As no extra port is re-
quired for the DC-signal, any energy that leaks through
the bias line can contribute to the measurement signal.
Finally, this approach does not rely on any symmetry
considerations of the cavity, simplifying design and anal-
ysis.
Fig. 1 shows a schematic of a generic transmission line
cavity, consisting of a waveguide that is isolated from the
input and output ports by impedance mismatches. At
the impedance mismatch points, the propagating waves
in the transmission line are reflected and a standing
wave forms at resonance. Depending on the choice of
impedance mismatch, one creates a boundary condition
for the microwave field corresponding to either a voltage
node (short), or a current node (open). To couple the
cavity to external circuitry one, or both, of the boundary
conditions are relaxed, which causes part of the power
to be transmitted. In microwave cavities, a voltage node
can be implemented by a short to ground, while a cur-
rent node by a gap capacitor. These also have analogues
in optical cavities:
for optics, a short circuit boundary
can be implemented by a semi-silvered mirror, while an
open-circuit boundary can be implemented by a magnetic
mirror19.
In CPW microwave resonators, partially transmitting
impedance mismatches are typically implemented using
lumped-element components such as inductors or capac-
itors. In general, there are four types of lossless couplers
possible, which are depicted in Fig. 1b. Depending on
the choice and configuration of the inductor or capaci-
tor one obtains unity reflection (Sij = δij) in the limit
ω (cid:55)→ 0 (DC-block) or ω (cid:55)→ ∞ (AC-block). Including that
reflection on a short causes a π-phase shift, each quad-
rant of Fig.1b can be classified according to its scattering
behaviour as Sij(ω) = ±δij, in the appropriate limit20.
For a λ/4 CPW resonator made from a transmission
line coupled to a single external port, both of impedance
Z0, the coupling quality factor Qc for all four types of
couplers can be written in the following unified form20:
Qc =
π
4
1
b±2
c
,
(1)
Γ Qc
Cseries [fF] Lseries [nH] Cshunt [pF] Lshunt [pH]
.5
3.14
318
.9
254
35.4
.99 31 · 103 3.22
.999 3.1 · 106 .319
1.27
11.5
126
1272
3.18
28.6
315
3180
796
88.4
8.03
0.79
TABLE I. Typical values for different couplers; reflection co-
efficients, Γ, coupling Qc’s, and the required value of capaci-
tance or inductance, for a single port cavity of 5 GHz of 50 Ω
coupled with the coupler to a feedline of 50 Ω.
where bc is the normalized susceptance of the coupler
with bc = Z0ωC for capacitive couplers and bc = Z0/Lω
for inductive couplers, with +/− for a series / shunt con-
figuration respectively. In Table 1 we tabulated the val-
ues of the inductor and capacitor components required
to achieve typical values Qc and reflectivities Γ.
In choosing which microwave coupler is most suitable
for galvanic access, either the series inductor or the shunt
capacitor, consideration of stray reactance is important.
For example, a resonator with Qc ∼ 103 coupled with
a series inductor would require an inductance of 100 nH
with a self-resonance frequency above the cavity reso-
nance. Realizing such a high on-chip inductance with a
self-resonance frequency above ∼ 8−10 GHz is not prac-
tical using geometric inductance, and requires high ki-
netic inductance nano-inductors21 or Josephson junction
arrays22,23, which suffer from limiting dynamic range and
can complicate operation due to their non-linear nature.
In contrast, using an on-chip parallel plate capacitor, as
we will show here, it is possible to engineer a large ca-
pacitance with small stray inductance using conventional
thin-film technologies.
As a proof of principle, we demonstrate the concept
of a shunt capacitor microwave mirror using a λ/4-
transmission cavity that incorporates one shunt capacitor
and one series capacitor, shown schematically in Fig.1c.
Fig. 2 shows an optical microscope image of the device us-
ing a CPW cavity and an on-chip parallel plate capacitor.
The devices are fabricated in a three step e-beam lithog-
raphy process. First we pattern the resonator on sapphire
using a layer of ∼ 45 nm of sputtered Molybdenum-
Rhenium alloy with reactive-ion etching24. Subsequently
we deposit ∼ 100 nm of PECVD Si3N4, which is wet-
etched using HF. The upper plate of the capacitor is
patterned in a lift-off process using PMMA and a MoRe
film of ∼ 90 nm. The resulting top plate acts as a ca-
pacitive coupler between the center conductor and the
ground plane, see Fig. 1e-f. We estimate the parallel
plate contribution to the shunt capacitance to be 27 pF
and a stray capacitance from the lower capacitor elec-
trode to the ground plane of 3 − 6 pF. From formula
0 ω2C 2/4 ∼ 2000. Using finite
1, we estimate Qc = πZ 2
element analysis simulations20, we estimate the first self-
resonance frequency of the capacitor to be ∼ 22 GHz,
significantly above the cavity frequency. From equation
1, we need a gap capacitance at port 1 of 10 fF to obtain
a symmetrically coupled cavity.
For the microwave characterization, we cool the device
to T ∼ 15 mK in a radiation-tight microwave box. Using
two identical cryogenic microwave reflectometry configu-
rations connected to both ports20, we measure the full S-
matrix of our device. We apply a DC voltage to the center
conductor of our cavity using a bias tee attached to port
2. Fig. 3a shows a measurement of the reflection from
port 1 (S11) with a resonance at ω = 2π × 5.3889 GHz,
and a linewidth of κtot = 2π × 3.49 MHz. This demon-
strates we are able to make superconducting microwave
resonators with loaded quality factors in the range of
3
FIG. 3. Microwave network measurement characterizing the
scattering matrix of the cavity measured with −135 dBm at
the sample. (a) Reflection from port 1, measuring ω = 2π ×
5.3889 GHz, κtot = 2π× 3.49 MHz, and κ1 = 2π× 0.51 MHz.
(b) Reflection from port 2, measuring the same ω, and κtot,
with κ2 = 2π × 2.75 MHz. (c) Transmission from port 2 to 1,
we measure a single resonance with the same frequency and
linewidth.
Q ∼ 103 that are galvanically accessible through a fre-
quency non-selective (non-resonant) connection.
In addition to measuring the cavity through the gap
capacitance, we can also use the shunt capacitor as a
partially transmitting mirror. Fig. 3b shows a measure-
ment of the cavity resonance through the shunt capac-
itor. We observe a resonance at the same frequency ω
and linewidth, demonstrating that the coupler works as
a mirror. From the fit20, we find a coupling Qc2 = 1960,
giving an effective capacitance of 29.5 pF. With the fits
of both reflection measurements we can extract the cou-
pling rates κ1,2 for each port20. By combining these re-
sults we can extract the magnitude of the internal losses
using κtot = κ1 + κ2 + κint, and find an internal loss
rate of about κint ∼ 2π × 230 kHz. We estimate20 a
contribution of 8-80 kHz to the total internal loss rate of
the cavity from the dielectric losses of the shunt capac-
itor, assuming a dielectric loss tangent δ ∼ 10−3 − 104.
Reducing the dielectric thickness to 10 nm, we predict20
that this loss rate could be reduced to 0.8 kHz, limiting
the internal Q of the cavity to 6.3 × 105.
In transmission, Fig.3c, we observe a single resonance,
with a clean spectrum over the full measurement band-
4
large DC voltage to the center conductor of the resonator.
By reducing the dielectric layer thickness to 10 nm, we
predict that coupling quality factors of up to 3 × 105
should be possible while the first the self-resonance of the
capacitor appears at ∼ 8 GHz.20 For larger capacitances
the dielectric losses of the deposited dielectric contribute
less than a kHz to the internal loss rate of the cavity20, at
the expensive of a reduced dielectric breakdown voltage.
The simplicity of this broadband technique together
with the possibility of large quality factors suggests that
this new design could be very attractive for many applica-
tions and experiments involving superconducting hybrid
circuits.
The authors would like to thank Daniel Bothner,
Joshua Island, Nodar Samkharadze, David van Wo-
erkom, and Martijn Cohen for useful discussions.
1M. LaHaye, J. Suh, P. Echternach, K. Schwab, and M. Roukes,
“Nanomechanical measurements of a superconducting qubit,”
Nature 459, 960–964 (2009).
2J.-M. Pirkkalainen, S. Cho, J. Li, G. Paraoanu, P. Hakonen, and
M. Sillanpaa, “Hybrid circuit cavity quantum electrodynamics
with a micromechanical resonator,” Nature 494, 211–215 (2013).
3R. Andrews, A. Reed, K. Cicak, J. Teufel,
and K. Lehnert,
“Quantum-enabled temporal and spectral mode conversion of mi-
crowave signals,” arXiv preprint arXiv:1506.02296 (2015).
4M. Hofheinz, F. Portier, Q. Baudouin, P. Joyez, D. Vion,
P. Bertet, P. Roche, and D. Est`eve, “Bright side of the coulomb
blockade,” Physical review letters 106, 217005 (2011).
5L. P. Rokhinson, X. Liu, and J. K. Furdyna, “The fractional ac
josephson effect in a semiconductor-superconductor nanowire as
a signature of majorana particles,” Nature Physics 8, 795–799
(2012).
6F. Chen, J. Li, A. Armour, E. Brahimi, J. Stettenheim, A. Sirois,
R. Simmonds, M. Blencowe, and A. Rimberg, “Realization of
a single-cooper-pair josephson laser,” Physical Review B 90,
020506 (2014).
7Y.-Y. Liu, J. Stehlik, C. Eichler, M. Gullans, J. Taylor, and
J. Petta, “Semiconductor double quantum dot micromaser,” Sci-
ence 347, 285–287 (2015).
8K. Petersson, L. McFaul, M. Schroer, M. Jung, J. Taylor,
A. Houck, and J. Petta, “Circuit quantum electrodynamics with
a spin qubit,” Nature 490, 380–383 (2012).
9D. Bothner, M. Knufinke, H. Hattermann, R. Wolbing, B. Ferdi-
nand, P. Weiss, S. Bernon, J. Fort´agh, D. Koelle, and R. Kleiner,
“Inductively coupled superconducting half wavelength resonators
as persistent current traps for ultracold atoms,” New Journal of
Physics 15, 093024 (2013).
10Z.-L. Xiang, S. Ashhab, J. You, and F. Nori, “Hybrid quantum
circuits: Superconducting circuits interacting with other quan-
tum systems,” Reviews of Modern Physics 85, 623 (2013).
11J. E. Moore, “Viewpoint: An extraordinary josephson junction,”
Physics 5, 84 (2012).
12J. Skoldberg, T. Lofwander, V. S. Shumeiko, and M. Fogelstrom,
“Spectrum of andreev bound states in a molecule embedded in-
side a microwave-excited superconducting junction,” Physical re-
view letters 101, 087002 (2008).
13V. Ranjan, G. Puebla-Hellmann, M. Jung, T. Hasler,
A. Nunnenkamp, M. Muoth, C. Hierold, A. Wallraff,
and
C. Schonenberger, “Clean carbon nanotubes coupled to supercon-
ducting impedance-matching circuits,” Nature communications
6, doi:10.1038/ncomms8165.
14B. Schneider, S. Etaki, H. van der Zant, and G. Steele, “Cou-
pling carbon nanotube mechanics to a superconducting circuit,”
Scientific reports 2 (2012).
15F. Chen, A. Sirois, R. Simmonds, and A. Rimberg, “Introduction
FIG. 4. Voltage bias characterization: (a) Coupling quality
factor to port 2, Qc2 and effective internal quality factor seen
by port 2, Qi2, using a reflection measurement through the
shunt capacitance (S22), as a function of bias voltage mea-
sured at a power of −135 dBm, corresponding to 100 pho-
tons. (b) Leakage current as a function of bias voltage. The
dashed line indicates a resistance of 56 GΩ.
width of 4− 8 GHz, showing that this approach does not
suffer from spurious resonances.
In figure 4, we characterize the performance of our
cavity with a DC voltage bias applied to port 2 using
a bias tee. As shown in Fig. 4a, we observe no notable
effect on the microwave response up to ∼ 80 V. The same
behaviour is also observed at single photon level (input
power of −155 dBm). At 80 V, we observe a leakage cur-
rent of 1.4 nA, giving a resistance of ∼ 56 GΩ. Above
80 V, we see the onset of dielectric break down with the
leakage current rising sharply to 25 nA, leading to an
estimated breakdown field of 4 MV/cm. Beyond 80 V,
we see a degradation of the internal quality factor, corre-
sponding to an increase of ∼ 320 kHz to the internal loss
rate. Also we observe a slight increase in the coupling
quality factor to port 2, Qc2, implying an increase in the
shunt capacitance of about ∼ 5 pF. This could be caused
by an inversion layer induced in the Si3N4 dielectric, ef-
fectively decreasing the plate separation. The increase
of internal losses could be related to Ohmic losses in the
inversion layer.
To conclude, we have introduced a new type of mi-
crowave coupler that allows galvanic access to the center
conductor of a CPW microwave resonator. We demon-
strated this concept by engineering a λ/4-transmission
cavity with a high quality factor in which we can apply a
of a dc bias into a high-q superconducting microwave cavity,”
Applied Physics Letters 98, 132509 (2011).
16S.-X. Li and J. Kycia, “Applying a direct current bias to su-
perconducting microwave resonators by using superconducting
quarter wavelength band stop filters,” Applied Physics Letters
102, 242601 (2013).
17S. E. de Graaf, D. Davidovikj, A. Adamyan, S. Kubatkin, and
A. Danilov, “Galvanically split superconducting microwave res-
onators for introducing internal voltage bias,” Applied Physics
Letters 104, 052601 (2014).
18Y. Hao, F. Rouxinol, and M. LaHaye, “Development of a broad-
band reflective t-filter for voltage biasing high-q superconducting
microwave cavities,” Applied Physics Letters 105, 222603 (2014).
19M. Esfandyarpour, E. C. Garnett, Y. Cui, M. D. McGehee, and
M. L. Brongersma, “Metamaterial mirrors in optoelectronic de-
vices,” Nature nanotechnology 9, 542–547 (2014).
20See supplementary material.
5
21A. J. Annunziata, D. F. Santavicca, L. Frunzio, G. Catelani,
M. J. Rooks, A. Frydman, and D. E. Prober, “Tunable super-
conducting nanoinductors,” Nanotechnology 21, 445202 (2010).
and
K. Lehnert, “Amplification and squeezing of quantum noise with
a tunable josephson metamaterial,” Nature Physics 4, 929–931
(2008).
22M. Castellanos-Beltran, K. Irwin, G. Hilton, L. Vale,
23V. E. Manucharyan, J. Koch, L. I. Glazman, and M. H. Devoret,
“Fluxonium: Single cooper-pair circuit free of charge offsets,”
Science 326, 113–116 (2009).
24V. Singh, B. H. Schneider, S. J. Bosman, E. P. Merkx, and G. A.
Steele, “Molybdenum-rhenium alloy based high-q superconduct-
ing microwave resonators,” Applied Physics Letters 105, 222601
(2014).
25D. M. Pozar, Microwave engineering (John Wiley & Sons, 2009).
Supplementary Material: Broadband architecture for galvanically accessible
superconducting microwave resonators
6
Sal J. Bosman1, Vibhor Singh1, Alessandro Bruno1,2, Gary A. Steele1
1Kavli Institute of NanoScience, Delft University of Technology,
PO Box 5046, 2600 GA, Delft, The Netherlands.
2Qutech Advanced Research Center, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
S1. MEASUREMENT SETUP
The complete measurement setup used for the device characterization is shown schematically in Fig. S1. It consists
of two identical microwave reflectometry measurement chains, such that we have full access to the scattering matrix
of the device (S11, S12, S22, S21). The vector network analyser (VNA) outputs a signal that is fed through a variable
attenuator at room temperature into the fridge, where it is first heavily attenuated before reaching the sample through
a directional coupler. The reflected signal from the device is sent back to the VNA using two isolators and amplifiers.
From each reflectometry setup we can measure the reflection of that port and by combining them we can measure
transmission in both directions. Additionally we can apply a DC voltage to port 2 of the device through an unfiltered
DC-line using a bias-tee just before the device.
FIG. S5. Measurement setup:
In the dilution refrigerator we have two identical microwave reflectometry setups. The
directional coupler near the sample separates the incident and reflected power from the sample. Additionally, the measurement
chain coupled to port 2 of the device has a bias-tee to inject the DC voltage bias onto the chip.
VNA (Keysight PNA N5222A)SMU (Keysight B2961A)300K4K15mKsource port 1source port 2receiverport 2receiverport 1VPasternackPE2204-30Aero(cid:31)ex8800 SMF2-12PasternackPE8302LNF LNC4-8A+40 dBAgilent11713B(0-120 dB)MiteqAFS3-0400800-07-10P-4+35 dB-9 dB-29 dB-30 dB S2. MICROWAVE CIRCUIT ANALYSIS
7
For two-port components, as depicted in Fig.1b of the main text, the transmission matrices, or ABCD-matrices
are of the form [S1]:
Tseries =
(cid:19)
(cid:18) 1 Z
0 1
(cid:18) 1 0
(cid:19)
,
1
Z 1
(cid:19)
(cid:18) V1
I1
(cid:19)
(cid:18) V2
I2
,
Tshunt =
= T
.
(S2)
These matrices relate incoming voltages and currents of port 1 (V1, I1) to outgoing (V2, I2) from port 2, hence
characterize transmission of the two-port network. From these matrices we can already understand the limiting
behaviour Sij(ω) = ±δij stated in the main text. If one takes the limit wherein the off-diagonal element goes to zero,
the component shows perfect transmission. And in the limit where the off-diagonal element diverges, all power is
reflected. The minus sign for reflection of a shunt component is due to the reversed sign of I2 in T -matrices compared
to scattering matrices (i.e. the current flows out of port 2). Using standard formulas we can rewrite T into explicit
scattering parameters for each component as:
Sseries
ii
=
z
z + 2
,
Sseries
ij
=
2
2 + z
,
Sshunt
ii
=
−1
2z + 1
,
Sshunt
ij
=
2z
2z + 1
.
(S3)
Using these expressions the reflection coefficient of port i, Γi = Sii, can easily be calculated, where z is the
normalized impedance z = Z/Z0 and z = 1/jZ0ωC (z = jωL/Z0) for the capacitor (inductor), with j the imaginary
It is perhaps interesting to note that the 50 − 50 beam splitter condition (Γ = 0.5), for such a two-port
unit.
component embedded in a 50 Ω transmission line (TL) needs a 25 Ω impedance for a shunt and 100 Ω for a series
component
To derive formula 1 in the main text we need to determine the coupling quality factor for each of the four coupler
types for a single-port λ/4-microwave resonator. A λ/4 resonator requires opposite boundary conditions on each end
of the TL, hence the open type of couplers are connected to a shorted TL and vice versa for the short type of couplers.
Following reference [S1], here we present the generalized case. First we consider the open types of terminations;
the gap capacitor and series inductor. In this configuration we have the coupler in series with a shorted TL, which
has an impedance of zT L(ω) = j tan(βl), with l the length of the TL and β = ω/vp, where vp is the phase velocity
and j the imaginary unit. At resonance we have βl = π/2, and the input impedance diverges. Now the impedance of
the coupled resonator seen from the feedline is zin = zc + zT L, with zc the impedance of the coupler, either 1/jZ0ωC
or jωL/Z0. To perform a Taylor expansion around the resonance, where zT L diverges it is convenient to rewrite it in
terms of the susceptance of the coupler bc = Im(1/zc) and the cotangent. Note that for capacitors zc = −j/bc and
for inductors zc = j/bc, which we abbreviate as ± (upper sign corresponds to an inductive element and the lower sign
for a capacitive element). Now we can write the input impedance as follows:
(cid:18)
(cid:18) bc ∓ cot(βl)
± 1
bc
+
1
(cid:19)
cot(βl)
(cid:19)
,
,
zin(ω) = j
= j
bccot(βl)
1 + cot2(βl)
(ω − ω0)
ω0
,
cot2(βl)
1 + b2
c
(ω − ω0)
b2
ω0
c
(ω − ω0)
,
ω0
1
b2
c
(cid:39) ±j
π
2
(cid:39) ±j
(cid:39) ±j
π
2
π
2
at resonance: bc ± cot(βl) = 0,
(I)
,
where we Taylor expanded around βl =
(cid:39) π/2,
ωl
vp
where we used (I),
if bc (cid:28) 1.
The last approximation breaks down for very large coupling susceptances. Remark that we used the trigonometric
identity 1 + cot2 x = 1/ sin2 x to rewrite dz/d(βl) = ±j/ cos2(βl) = ±j/(cot2(βl) sin2(βl)). In this way we could
invoke the resonance condition. For a low loss resonator we can include internal losses by substitution of ω0 →
ω0(1 ∓ j/(2Qint)) in the numerator and obtain:
zin(ω) =
π
4Qintb2
c
± j
π
2
ω − ω0
ω0b2
c
.
(S4)
This expression of the input impedance is equivalent to that of a series LC-resonator, with a resistance on resonance
of R = Z0π/(4Qintb2
c). At critical coupling the resonator on resonance is impedance matched to the feedline, and
8
Qint equals Qc, which is captured with the coupling factor g = Z0/R = Qint/Qc. Now using Qc = QintR/Z0 we
obtain the result:
Qc =
π
4
1
b2
c
.
(S5)
For the shunt couplers the derivation is very similar. Now we consider a shunt inductor (Im(zc) = 1/bc = ωL/Z0) or
a shunt capacitor (Im(zc) = 1/bc = 1/(Z0ωC) coupled to an open ended λ/4 TL, with zT L = −j cot(βl). Now we
have a parallel circuit so we obtain:
1
zin(ω)
= j(∓bc +
1
cot(βl)
).
(S6)
We see that if we replace bc → 1/bc and reverse the sign we obtain the same expression, though in admittance
yin = 1/zin. This shows that such coupled cavities behave as parallel LC-resonators. Following the same logic we
obtain:
yin(ω) =
πb2
c
4Qint
∓ j
π
2
ω − ω0
ω0b2
c
,
(S7)
with (+) for capacitors and (-) for inductors respectively. So we conclude that for the shunt couplers we obtain:
(S8)
In the derivation for the series couplers we used bc (cid:28) 1, since for example a 10 fF gap capacitor in a 5 GHz cavity of
50 Ohms is bc ∼ 0.02, making the approximation valid. In the case of the shunt capacitor the reasoning goes exactly
c (cid:28) 1, in the case of 30 pF for the same cavity we obtain bc ∼ 50, justifying this
in opposite direction, where b−1
approximation.
Qc =
π
4
b2
c.
S3. MICROWAVE RESPONSE
With the expression for the input impedance at hand, it is easy to derive the microwave response of the cavity
in reflection. Each coupling port contributes to the total loss rate κtot and causes a small shift of the resonance
frequency, which is here not of our interest. In our implemented microwave cavity, as depicted in Fig. 1c and Fig. 2
of the main text, we can distinguish three separate loss channels that contribute to the total linewidth of the cavity:
κtot = κ1 + κ2 + κint. A reflection measurement on port i is sensitive to the ratio between the total linewidth and
coupling rate to port i, captured with the coupling coefficient: ηi = κi/κtot. Therefore if we absorb the coupling
rate of the other port into κint we can suffice using the previously derived expressions. The reflection of the effective
single-port cavity can then be written as:
S11(ω) =
zin − 1
zin + 1
= 1 −
2
1 + zin
.
Using that ω0/κ1 = Qc1 and similar for κint we can rewrite z(ω) (formula S3) as follows:
zin(ω) =
− 2j(ω − ω0)
κ1
.
κint
κ1
Combining both expressions and rearranging the κ’s we obtain:
S11(ω) = 1 −
2η1
1 − 2j(ω − ω0)/κtot
(S9)
(S10)
(S11)
The reflection response on port 2 (S22) is very similar, with the only difference that it was written in admittance.
Here we will use zin as the input impedance for port 2:
in − 1
y−1
y−1
in + 1
zin − 1
zin + 1
S22(ω) =
=
Following the same logic as before we obtain:
1 − yin
1 + yin
=
= −1 +
2
1 + yin
.
(S12)
S22(ω) = −1 +
2η2
1 + 2j(ω − ω0)/κtot
.
9
(S13)
For deriving the transmission response S21 = S12 one cannot use this trick and the cavity should be analysed using
transfer matrices. By multiplying the T -matrices of the gap-coupler, the TL and shunt coupler, one arrives at the
T -matrix for the full cavity, from which an expression for S12 can be determined. If we abbreviate b1 = Z0ωCgap and
b2 = Z0ωCshunt, and follow a similar procedure as before we obtain:
S12(ω) =
This expression can then be simplified to:
2 b1
b2
j(b2
1 + b−2
2 ) + 2(ω − ω0)/(4ω0/π)
S12(ω) = S21(ω) =
j + 2(ω − ω0)/κtot
,
√
2
η1η2
.
(S14)
(S15)
and we have obtained all response functions. For reflection of the gap capacitor (S11, formula S10) with a large
detuning from the resonance frequency, the response is anchored at the point (1, 0) in the complex plane, which shows
that the reflection on a (quasi)-open does not cause a phase shift of the signal. The response of the shunt capacitor,
described by formula S12, is anchored at (−1, 0), showing the π phase shift on a (quasi)-short boundary condition.
Transmission, S21 = S12, for a large detuning is anchored at the origin, indicating there is no transmission of very
off-resonant signals.
Close to resonance the term 2j(ω − ω0) becomes important and the response will trace a (resonance) circle in the
complex plane, where the radius depends on the coupling coefficient ηi. For an over-coupled port (ηi > 0.5) the
resonance circle will enclose the origin and the phase angle will change by 2π, whereas the phase angle of an under-
coupled port will remain on the same branch. We would like to make a cautionary note on interpretting phase data
without inquiring the resonance circle, as the ‘unwrapping’ of different phase branches is arbitrary and can lead to
erroneous conclusions. At resonance the magnitude of the reflection response will show a minimum (dip) of magnitude
Sii(ω0) = 1 − 2ηi. After determining whether the port is under- or over-coupled, ηi can be found by measuring the
depth of the resonance dip. To illustrate the differences in the microwave response we show the results of a simulation
in QUCs (an open-source circuit simulator [S2]) in Fig. S2.
10
FIG. S6. Numeric S-parameter simulation in QUCs of a cavity with a gap capacitance of 5 fF and a shunt capacitance of 30
pF (not the same values as in the experiment) illustrating the differences in microwave response; (left S11 under coupled and
√
anchored at (1,0), middle S22 over coupled and anchored at (-1,0), and right shows S12 anchored in (0,0) and its magnitude
η1η2 and hence is sensitive to the coupling imbalance κ1/κ2 as well as to the magnitude of internal losses κint
is equal to
(which is sometimes omitted).
S4. DATA ANALYSIS
Here we demonstrate the data analysis with the reflection data of port 2. Experimental realities like cable resonances
and other uncontrolled factors in the circuitry can change the response from a Lorentzian line shape to a skewed-
Lorentzian or Fano-line shape. This can be captured by the following adaptation of formula S12:
(cid:18)
(cid:19)
S22(ω) = αeiφ + (1 − α)
− 1 +
2η2
1 + 2j(ω − ω0)/κtot)
,
(S16)
where A, α and φ account for an offset of the anchor of the resonance circle. Taking these effects correctly into
P1Num=1Z=50 OhmP2Num=2Z=50 OhmCL1Subst=Subst1W=10 umS=10 umL=5 mmC1C=30 pFSubst1er=13h=0.5mmt=0.1 umtand=5e-6rho=0.0D=0S parametersimulationSP1Type=linStart=5.5GStop=6GPoints=5000C2C=5 fF5.5e95.6e95.7e95.8e95.9e96e900.51frequencyS[2,1]5.5e95.6e95.7e95.8e95.9e96e90.60.81frequencyS[1,1]5.5e95.6e95.7e95.8e95.9e96e9-20020frequencyphaseS115.5e95.6e95.7e95.8e95.9e96e90.60.81frequencyrealS115.5e95.6e95.7e95.8e95.9e96e9-0.200.2frequencyimagS115.5e95.6e95.7e95.8e95.9e96e90.60.81frequencyS[2,2]5.5e95.6e95.7e95.8e95.9e96e9-2000200frequencyphaseS225.5e95.6e95.7e95.8e95.9e96e9-10frequencyrealS225.5e95.6e95.7e95.8e95.9e96e9-101frequencyimagS225.5e95.6e95.7e95.8e95.9e96e9-1-0.50frequencyimagS215.5e95.6e95.7e95.8e95.9e96e9-0.500.5frequencyrealS215.5e95.6e95.7e95.8e95.9e96e9-200-1000frequencyphaseS210.51frequencyS[1,1]0.51frequencyS[2,2]0.51frequencyS[1,2] 11
FIG. S7. Data analysis (a) Schematic of the loss and coupling rates. (b) Reflection of port 2 including the experimental data
and fit. (c) Resonance circle plot of the S22 response showing data and fit, demonstrating the response is anchored at (-1,0) in
the IQ-plane. The fitted resonance frequency and FWHM points are indicated with enlarged blue points.
account is non-trivial and described for example in [S3,S4].
As the transmission response is insensitive to such effects, we first determine the total linewidth by fitting S12 to
formula S14 and obtain κtot = 3.49 MHz. Subsequently we can fit the reflection data as shown in Fig. S3 for S22 and
determine the coupling rates. From these fits we obtain κ1 = 0.51 MHz (η1 = 0.147) and κ2 = 2.75 MHz (η2 = 0.79).
Using κtot = κ1 + κ2 + κint, we extract the internal loss rate as κint = 230 kHz, corresponding to a Qint ∼ 23.4× 103.
S5. SHUNT CAPACITOR SIMULATIONS
In this section we explore the implications of using the shunt-capacitor coupling architecture on the (potential)
performance of a microwave resonator. First we discuss the simulation setup used, and follow with discussing the
self-resonances of the shunt capacitor, losses incurred by the dielectric of the capacitor and maximum obtainable
Q-factors.
12
S5.1. Sonnet simulation setup
Sonnet is simulation software specialized in planar microwave circuits. Both the full cavity and the shunt capacitor
are simulated separately, as depicted in Fig. S4. To allow simulations on a 10× 2.5 µm grid we implemented the input
coupler as an ideal capacitor of 10 fF. We used a kinetic (sheet) inductance of Lk = 0.78 pH/(cid:3) for the Molybdenum-
Rhenium layers based on earlier measurements for similar films [S5]. For the SiN brick we used r = 7.4, and defined
3 degrees of freedom per lattice point in the z-direction.
FIG. S8.
Sonnet simulation setup: (a) 3D view of the shunt capacitor showing the substrate, metallization and the SiN
dielectric brick defined inside a vacuum layer. (b) Top view of the shunt capacitor simulation. (c) Top view of the simulation
configuration where the full bias cavity is simulated. The inset on the left hand side shows the implementation of an ideal input
capacitor of 10 fF, such that a much lower resolution could be chosen.
S5.2. Low frequency response
Here we simulate the low frequency response of the shunt capacitor as a function of thickness. In this configuration
it can be considered as a single-pole low-pass filter, which enables us to determine the capacitance from its cut-
off frequency. For applications it can be used to determine the required DC-filtering to protect potential circuits
against low frequency noise. Fig. S5a shows that by decreasing the thickness t of the dielectric the transmission for
high frequencies is more suppressed, which is expected as Cshunt ∝ t−1 in the parallel plate approximation. More
instructive is to consider the transmission on a logarithmic frequency scale, as depicted in Fig. S5b, known as a
Bode plot. We observe the slope to be close to 20 dB/octave, characteristic of a single-pole low pass filter. Using a
RC-circuit model we can determine the capacitance from the cut-off frequency using C = 1/(R 2πfc), where R = 25 Ω
because both 50 Ω ports are in parallel. For t = 100 nm we determine a cut-off frequency of 255 MHz, corresponding
to 25 pF of capacitance, close to the 27 pF we expect from a parallel plate approximation.
13
FIG. S9. Simulated low frequency response of the shunt capacitor, while varying the Si3N4 dielectric thickness. (a) Transmis-
sion response (S21) as a function of frequency. (b) Transmission (S21) on a logarithmic frequency scale. We determine the
slope as 19.6 dB/octave. For a t = 10 nm we see that the stray inductance causes deviation from this ideal filter model. The
inset shows the cut-off frequency (−3 dB-point) as a function of thickness t.
S5.3. Self-resonance frequency
In the previous section we observed that for a 10 nm dielectric a self-resonance of the shunt capacitor due to stray
inductance appeared around ∼ 8 GHz. These self-resonances place an upper bound to achievable Qc’s, because the
coupling quality-factor increases as the total capacitance increases. To determine the maximum obtainable coupling
Q for a 50 Ω cavity and a shunt capacitor of this geometry, we study these self-resonances as shown in Fig. S6. The
first resonance drops from ∼ 25 GHz for a 100 nm thickness, to ∼ 8 GHz for 10 nm thickness. Thus for circuits
requiring coupling Q’s in access of 3 · 105, corresponding t = 10 nm, one needs to take measures to prevent these
resonances to interfere with the circuit, like increasing the impedance of the resonator or introducing structures in
the shunt capacitor that prevent box modes (like via’s in a pcb).
FIG. S10.
Simulated mi-
crowave transmission, while
varying the Si3N4 dielec-
tric thickness from 100 nm
to 10 nm in steps of 10
nm.
(a) Transmission re-
sponse (S21) of
just the
shunt capacitor showing self-
resonances of the shunt ca-
pacitor (dashed grey lines).
Each subsequent curve has
an offset of 50 dB. (b) Trans-
mission response for the com-
plete bias
cavity showing
the first 5 cavity resonances
and the self-resonances of
the shunt capacitor. Clearly
changing the dielectric thick-
ness does not have a no-
ticeable effect on the cav-
ity resonances, but does pull
down the self-resonances of
the shunt capacitor.
14
S5.4. Dielectric losses
Deposited dielectrics are well known to be lossy with loss tangents varying from tan δ ∼ 10−3 − 10−5. Here we
consider this contribution to the losses of a cavity using a shunt capacitor as coupler. The dielectric loss tangent
is specified as tan δ = 2/1, with = 1 + j2, where 2 denotes the dissipative part of the dielectric constant.
For a lossy parallel plate capacitor, that we showed in previous sections to be a valid approximation, we can use
C = A/d = C(1 + j tan δ). As a circuit this can be modelled by including an equivalent series resistor (Resr),
capturing the losses in the dielectric, where Resr = tan δ/(ωC), as depicted in Fig. S7a. Now we consider a single-port
λ/4 cavity, as displayed in Fig. S7b, and simulate it in QUCs [S2] for various coupling capacitances and loss tangents.
From the simulated scattering data we can extract the coupling rate to port 2, κ2 as a function of dielectric thickness,
showed by the dashed line in Fig. S7. As expected κ2 decreases from about 2 MHz to 20 kHz by decreasing the
dielectric thickness.
(a)
in the
FIG. S11.
Lumped
element simulation of
losses
shunt
capacitor.
In-
corporating dielectric
losses in a capacitor.
(b) Lumped element
model of single port
cavity showing the loss
processes.
(c) Loss
rates as a function of
thickness of the capac-
itor for various dielec-
tric loss tangents. The
coupling rate κ2 is indi-
cated with the dashed
line, the internal losses
due to the dielectric
losses in the shunt ca-
pacitor are shown by
the solid lines.
loss
int
in the
Dielectric
FIG. S12.
shunt
losses
capacitor.
(a) Fig-
ure showing the dielec-
tric losses as a func-
tion of
tangent
for various thicknesses.
In the inset we see
that the losses show
a linear relation on a
log-log plot indicating
a monomial
relation-
∝ t ·
ship as κshunt
δ. (b) Figure showing
the maximum obtain-
able loaded quality fac-
tor for different δ and
thicknesses.
In this
plot other loss factors
are ignored and just
the coupling rate and
dielectric losses in the
capacitor are included.
The losses incurred by the lossy dielectric capacitor can be isolated by comparing κint for different δ’s to the lossless
case, which is shown in Fig. S7c as the solid lines. These incurred losses decrease as the coupling capacitance increases,
15
because the voltage across the capacitor plates decreases and hence the dielectric losses decrease as well. Assuming a
int ∼ 8−80
loss tangent of around δ ∼ 10−3−10−4 we estimate these losses in our experiment to be on the order of κshunt
kHz. Finally from this figure we see that for thin dielectrics and realistic δ’s the incurred losses can be minimized to
sub-kHz level.
Finally we can use this data to determine what the maximum possible loaded quality factor for this resonator
architecture is, shown in Fig. S8. By including both the coupling rate and dielectric losses of the capacitor, we see
that the loaded quality factor is limited to Ql (cid:46) 3 × 105 for a dielectric thickness of 10 nm. Such a loaded quality
factor corresponds to linewidth’s in the range of κtot (cid:38) 20 kHz, sufficiently narrow for most applications. Beyond this
regime a different geometry or a higher impedance resonator is required.
[S1] D. M. Pozar, Microwave engineering (John Wiley & Sons, 2009)
[S2] M. Brinson and S. Jahn, International Journal of Numerical Modelling: Electronic Networks, Device and Fields
22, 297 (2009)
[S3] M. Khalil, M. Stoutimore, F. Wellstood, and K. Osborn, Journal of Applied Physics 111, 054510 (2012).
[S4] S. Probst, F. Song, P. Bushev, A. Ustinov, and M. Weides, Review of Scientific Instruments 86, 024706 (2015).
[S5] V. Singh, B. H. Schneider, S. J. Bosman, E. P. Merkx, and G. A. Steele, Applied Physics Letterrs 105, 222601
(2014).
|
1305.0942 | 2 | 1305 | 2013-05-07T13:45:25 | Effect of perpendicular uniaxial anisotropy on the annihilation fields of magnetic vortices | [
"cond-mat.mes-hall"
] | The magnetic vortex structure, that is present in several nanoscopic systems, is stable and can be manipulated through the application of a magnetic field or a spin polarized current. The size and shape of the core are strongly affected by the anisotropy, however its role on the core behavior has not yet been clarified. In the present work we investigate the influence of a perpendicular anisotropy on the annihilation and shape of magnetic vortex cores in permalloy disks. We have used both micromagnetic simulations with the OOMMF code, and an analytical model that assumes that the shape of the core does not change during the hysteresis cycle, known as the rigid core model, to calculate the annihilation fields. In both cases we found that the annihilation fields decrease with increasing perpendicular anisotropy for almost all the structures investigated. The simulations show that for increasing anisotropy or dot thickness, or both, the vortex core profile changes its shape, becoming elongated. For every dot thickness, this change does not depend on the dot radius, but on the relative distance of the core from the center of the dot. | cond-mat.mes-hall | cond-mat | Effect of perpendicular uniaxial anisotropy on the annihilation fields of
magnetic vortices
E.R.P. Novais,1 S. Allende,2, 3 D. Altbir,3 P. Landeros,4 F. Garcia,5 and A.P. Guimaraes
1)Centro Brasileiro de Pesquisas F´ısicas, 22290-180, Rio de Janeiro, RJ, Brazil
2)Departamento de Ciencias F´ısicas, Universidad Andr´es Bello, Avenida Rep´ublica 220, 837-0134, Santiago,
Chile
3)Departamento de F´ısica, Universidad de Santiago de Chile and CEDENNA, Avda. Ecuador 3493, Santiago,
Chile
4)Departamento de F´ısica, Universidad T´ecnica Federico Santa Mar´ıa, Avenida Espana 1680, Valpara´ıso,
Chile
5)Laborat´orio Nacional de Luz S´ıncrotron, 13083-970, Campinas, SP, Brazila)
(Dated: 31 August 2018)
The magnetic vortex structure, that is present in several nanoscopic systems, is stable and can be manipulated
through the application of a magnetic field or a spin polarized current. The size and shape of the core are
strongly affected by the anisotropy, however, its role on the core behavior has not yet been clarified.
In
the present work we investigate the influence of a perpendicular anisotropy on the annihilation and shape of
magnetic vortex cores in permalloy disks. We have used both micromagnetic simulations with the OOMMF
code, and an analytical model that assumes that the shape of the core does not change during the hysteresis
cycle, known as the rigid core model, to calculate the annihilation fields. In both cases we found that the
annihilation fields decrease with increasing perpendicular anisotropy for almost all the structures investigated.
The simulations show that for increasing anisotropy or dot thickness, or both, the vortex core profile changes
its shape, becoming elongated. For every dot thickness, this change does not depend on the dot radius, but
on the relative distance of the core from the center of the dot.
I.
INTRODUCTION
Among the nano- and mesoscopic magnetic structures
that have attracted the attention of researchers in re-
cent years stand out those that exhibit a vortex, since
this state presents both interesting physical properties
and a high potential for applications.1 -- 6 Magnetic vortex
states in nanodots are characterized by in-plane magnetic
moments curling around a core which has magnetization
pointing out-of-plane. Two main features are defined in
a vortex, the circulation, i.e., the sense of the magne-
tization curling, being −1 (+1) for clockwise (counter-
clockwise) rotation direction, and the polarity defined
by the direction of the core magnetization denoted by
p = +1 (−1) for upward (downward) direction. The core
profile mz(r) (the z component of the unit magnetiza-
tion) of a vortex in equilibrium is cylindrically symmetric,
usually approximated by a Gaussian curve surrounded by
a small dip (see Fig. 1).1,7
A vortex configuration is the ground state of different
nanodots with regular shape such as ellipses, squares,
spheres, caps and disks, with lateral dimensions rang-
ing from one hundred nanometers to a few microns, with
some tens of nanometers thickness.8 -- 14 While an external
in-plane magnetic field that increases continuously from
zero is applied to a disk exhibiting a magnetic vortex,
its core will be displaced perpendicularly to the field di-
rection, until its center reaches the disk edge. The field
a)Present address: Centro Brasileiro de Pesquisas F´ısicas, 22290-
180, Rio de Janeiro, RJ, Brazil
corresponding to this limiting situation, i.e., a field that
expels the vortex core, is known as the annihilation field.
A further field increase will expel the vortex from the
disk, and the saturated state will eventually be reached.
On the other hand, when starting from a fully saturated
state, by decreasing the field to a certain critical value
(commonly referred in the literature as the nucleation
field) the vortex will again be formed. The knowledge
and control of the magnitude of these fields is a key issue
for several applications considering the manipulation of
magnetic vortices, such as non-volatile magnetic memory
devices, or high-resolution magnetic field sensors.15 -- 17
The vortex-core nucleation and annihilation processes
have been discussed by several authors18 -- 23 and, in par-
ticular, the influence of extrinsic properties on the anni-
hilation field has been taken into account. Wu et al.24
investigated the role of geometrical asymmetries, find-
ing that the annihilation of the vortex depends strongly
on the asymmetry. The effect of the shape asymmetry
has also been studied by Dumas et al.25, by measuring
the angular dependence of the annihilation field. Miha-
jlovi´c et al.26 have shown that temperature also affects
the reversal mechanism and the vortex annihilation field,
while experiments by Davis et al.27 suggest that the nu-
cleation and annihilation fields depend on the magnetic
field sweep rate.
This problem was also examined from the theoretical
point of view, within the framework proposed by Gus-
lienko et al.20 This model approximates the core as a
magnetization distribution whose profile does not change
during the reversal process.
Some important properties of the vortices, such as the
core size and some dynamic features, can be tailored in-
3
1
0
2
y
a
M
7
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
2
4
9
0
.
5
0
3
1
:
v
i
X
r
a
2
troducing a uniaxial perpendicular magnetic anisotropy,
as has been recently shown17,28 In this case, as the
perpendicular anisotropy increases, important deviations
from the vortex core profile and from the canonical mag-
netic vortex configuration result. Beyond a critical value
of the anisotropy (K crit
it is no longer observed a
vortex, with the formation of a skyrmion (e.g., Fert et
al.29), a structure that was found in experiments with
BFeCoSi30 and, more relevant to the present study, was
also apparent in experiments with Co/Pt disks17 and
simulations.14,17
),
z
Vortex core deformations, even under the action of a
magnetic field, have not been so far systematically ana-
lyzed.
The aim of this paper is to get a better understand-
ing of the vortex annihilation process in magnetic dots.
For this, we have compared the description using the
rigid vortex model with results obtained by micromag-
netic simulations.
In order to explore the effect of the
perpendicular anisotropy on the vortex core properties,
and concomitantly, verify the limits of validity of the rigid
vortex model, we have introduced an anisotropic term in
both the theory and simulations. We also characterized
the vortex core deformations that are present in some
simulations.
The paper is organized as follows: after the Introduc-
tion we describe how we perform our micromagnetic sim-
ulations that lead us to study the annihilation fields ex-
tracted from the hysteresis curves of disks with various
sizes (Sec. II). Analytical calculations are presented in
Sec. III, with the inclusion of anisotropy terms into the
rigid vortex model. The results are contained in Sec. IV,
and finally, in Sec. V we summarize and draw conclu-
sions.
II. NUMERICAL SIMULATIONS
We investigated the hysteresis loops of individual mag-
netic nanodots defined by their thickness L varying be-
tween 10 and 30 nm, and diameters D from 100 to
1000 nm, while the uniaxial perpendicular anisotropy
Kz ranges from 0 to 300 kJ/m3. This study was
conducted through micromagnetic simulations14,31 us-
ing the OOMMF code.32 We used a stiffness constant
A = 13 × 10−12 J/m and a saturation magnetization
Ms = 860 × 103 A/m, the standard values used for bulk
permalloy, taking a cell size of 5 × 5 × 5 nm3. The maxi-
mum anisotropies used in this work that keep the vortex
structure are K max
= 300, 225 and 165 kJ/m3 for the
thicknesses L = 10, 20 and 30 nm, respectively.
z
For larger anisotropies, a skyrmion structure is ob-
served, and perpendicular magnetization appears on the
rim of the disk. For this reason, in all our calculations
the anisotropy constant value was chosen such that the
magnetic configuration at zero external applied field is a
vortex configuration, as shown in Fig. 1.
In our simulations we developed a systematic study of
FIG. 1. (Color Online) a) profile of the vortex core corre-
sponding to disks with D = 500 nm and L = 10 nm for
Kz = 0 and Kz = 300 kJ/m3; b) and c) depict the magne-
tization for Kz = 0 and Kz = 300 kJ/m3 with L = 10 nm.
d) profile of the vortex core with D = 500 nm and L = 30
nm for Kz = 0 and Kz = 165 kJ/m3. e) and f ) represent the
magnetization for Kz = 0 and Kz = 165 kJ/m3 for L = 30
nm. Note that from a) to d) the depth of the negative part
of the magnetization (the dip) increases.
the annihilation field that is determined from the maxi-
mum of the derivative dM/dB in the increasing magne-
tization branch of the hysteresis loop, which corresponds
to the expulsion of the vortex core. All hysteresis curves
were obtained starting from the unperturbed configura-
tion of the disks (with the vortex core at the center), in-
creasing the field from B = 0, in steps of ∆B = 0.1 mT,
leading us to obtain the annihilation field, and finally
reaching the magnetic saturation. In some simulations
we observed a deformation of the vortex core. In order
to characterize it we define
δ =
ry − rx
rx
,
(1)
where rx and ry are the sizes of the vortex core along
the x and y axes, respectively. As shown in Fig. 1, two
orthogonal sections (x and y directions) of the profiles
of the vortex core passing through the core center (max-
imum of mz) were made. The dimensions of the core
along the x and y directions were obtained by the full
widths at half maximum of the repective profile fit, us-
ing a pseudo-Voigt function.
III. ANALYTICAL MODEL
To obtain analytical expressions for the annihilation
field in the magnetic nanodots we started with a model
proposed by Guslienko et al.20,21 to investigate the vortex
behavior in submicron dots. These authors considered a
ferromagnetic dot with a height L and a radius R that
and
ρm = x cos φ +pR2 − x2 + x2 cos2 φ .
Using these expressions we can write Eq. 5 as
3
(7)
(8)
(9)
0
2bx
m2
m2
0
0
zρdρ# dφ
zρdρ(cid:21) dφ
WK = −KzLb2 sec−1(cid:20)
WK = −2KzL φm
−2KzL π
" b
φm(cid:20) ρm
b2 − R2 + x2(cid:21) (3 − 2 ln 4) − G .
z = (cid:16)1 − 4b2ρ2/(cid:0)b2 + ρ2(cid:1)2(cid:17) and
(b2 + ρ2)2! ρ dρ# dφ . (10)
0 1 −
When φm (x → R) ≈ π/2 or c = b/R ≪ 1, G can
be approximated to zero at first order of (R − x). How-
ever, in our calculations we considered it explicitly.
If
the anisotropy energy is normalized to M 2
s V , that is,
wK = WK/(M 2
s V ), and using s = x/R, c = b/R and
V = πR2L, we obtain
In this expression m2
G represents the contributions to the anisotropy energy
shown in the dark regions in Fig. 2a
G = 2KzL π
φm" ρm
4b2ρ2
wK (s) = −Kzc2
πM 2
s
sec−1(cid:20)
2cs
c2 − 1 + s2(cid:21) (3 − 2 ln 4)
−g (s) ,
(11)
where g (s) = G/M 2
s V . We proceed by minimizing the
magnetic anisotropy energy with respect to s and eval-
uating in the equilibrium displacement where the vortex
center reaches the dot perimeter. In other words, differ-
entiating Eq. 11 with respect to s and taking the limit
s → 1, we obtain the value of the contribution of the
anisotropy to the annihilation field
= −
Kz
M 2
s
c(cid:0)c2 − 2(cid:1) (ln 16 − 3)
π√4 − c2
− lim
s→1
∂wK (s)
hK = lim
s→1
∂s
∂g (s)
∂s
.
(12)
In this way, and adding this expression to the annihi-
lation field given by Eq. 3, we obtain the annihilation
field for a nanodot with perpendicular anisotropy
FIG. 2. Geometrical relation between the vortex core, defined
by the dotted line, and the full dot. a) Illustration of the angle
φm that depends on the radius of the dot, R, radius of the
core, b, and separation between the centers of the dot and
core, x. b) Representation of ρm, that depends on R, x, and
the angle φ between x and ρm.
presents a vortex state with a distribution of the unit
magnetization in cylindrical coordinates ρ, ϕ, z given by
~m = sin θ (ρ) φ + cos θ (ρ) z, where21
mφ = sin θ (ρ) =(cid:26) (2bρ/(cid:0)b2 + ρ2(cid:1)) ρ ≤ b
ρ ≥ b
1
.
(2)
Here b is the radius of the core.
If we consider mag-
netostatic, exchange, and Zeeman contributions to the
energy, the normalized dimensionless vortex annihilation
field in the rigid core model proposed by Guslienko et
al.21 is written as
R (cid:19)2
han (β, R) = 4πF1 (β) −(cid:18) R0
,
(3)
where β = L/R, R0 is the exchange length and F1 (β) is
given by
F1 (β, R) = ∞
0 (cid:18)1 −
1 − e−βt
βt (cid:19) J 2
1 (t)
dt
t
.
(4)
A.
Introducing a Perpendicular Uniaxial Anisotropy
While the model proposed by Guslienko et al.20,21 con-
tains no anisotropy, in our calculations we include a uni-
axial anisotropy along the z axis and focus on its effect on
the annihilation field. We start calculating the anisotropy
energy contribution of the system that is given by
WK = −LKz ( ~m · z)2 ρdφdρ ,
(5)
where Kz > 0 is the anisotropy constant and z is the
easy axis. From this expression, the contribution to the
energy due to the anisotropy comes only from the core
region inside the dot. From Fig. 2 we obtain
φm = arccos(cid:18) x2 + b2 − R2
2xb
(cid:19) ,
(6)
Kz
M 2
s
−
R (cid:19)2
han (β, R) = 4πF1 (β) −(cid:18) R0
π√4 − c2
c(cid:0)c2 − 2(cid:1) (−3 + ln 16)
− lim
∂g (s)
∂s
s→1
.
(13)
IV. RESULTS AND DISCUSSION
A. Annihilation fields
4
Our analyses for the annihilation field are based on
a theoretical approach and on micromagnetic simula-
tions. From both approaches we have obtained the de-
pendence with the perpendicular anisotropy of the anni-
hilation fields; from the simulations the core diameters
were also obtained. We present below the results for the
two cases: IV A annihilation field, and IV B evolution
of the magnetic core shape. We have observed that the
analytical calculations result in larger annihilation fields
as compared with the numerical simulations, however,
there is a qualitative agreement between the results from
both models. A qualitative agreement between theretical
results and measured annihilation fields was previously
reported.33
a)
L= 10 nm
50
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
40
30
Micromagnetic simulations
b)
L= 10 nm
20
60
50
40
30
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
Kz= 0 kJ/m3
Kz= 100 kJ/m3
Kz= 200 kJ/m3
Kz= 250 kJ/m3
Kz= 300 kJ/m3
Kz= 0 kJ/m3
Kz= 100 kJ/m3
Kz= 200 kJ/m3
Kz= 250 kJ/m3
Kz= 300 kJ/m3
20
Analytical method
200
400
600
Diameter (nm)
800
1000
FIG. 3.
(Color Online) Annihilation fields versus diameter
for dots a) obtained by micromagnetic simulation, and b)
obtained by analytical method. These graphs show the in-
fluence of the value of the perpendicular anisotropy on the
annihilation field for different diameters.
The values of the annihilation fields Ban as a function
of disk diameter, for different anisotropies Kz, obtained
from both methods are given in Figs. 3, 4 and 5 for
L = 10, 20 and 30 nm, respectively.
The two sets of results agree in the fact that, as the
diameters of the disks increase, the values become less
dependent on the anisotropy (Figs. 3, 4 and 5).
a)
L= 20 nm
90
80
70
60
50
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
40
110
100
Micromagnetic simulations
b)
L= 20 nm
Kz= 0 kJ/m3
Kz= 100 kJ/m3
Kz= 150 kJ/m3
Kz= 200 kJ/m3
Kz= 225 kJ/m3
Kz= 0 kJ/m3
Kz= 100 kJ/m3
Kz= 150 kJ/m3
Kz= 200 kJ/m3
Kz= 225 kJ/m3
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
90
80
70
60
50
40
30
Analytical method
200
600
400
Diameter (nm)
800
1000
FIG. 4. (Color Online) Annihilation fields versus diameter for
dots a) obtained by numerical calculation and b) obtained by
the analytical method.
Increasing the anisotropy, which results in larger core
sizes, one is led to lower annihilation fields.
For small diameters, the effect of the anisotropy is more
noticeable than for the large disks, both in the theory
and simulations.
In the simulations, the sensitivity of
the annihilation field to changes in anisotropy increases
with the value of Kz.
The disagreement between the two methods can be
related to a deformation of the core observed in the mi-
cromagnetic simulations.
a)
L= 30 nm
120
110
Micromagnetic simulations
b)
L= 30 nm
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
100
90
80
70
60
50
140
120
100
80
60
40
)
T
m
l
i
(
d
e
F
n
o
i
t
a
l
i
i
h
n
n
A
Kz= 0 kJ/m3
Kz= 50 kJ/m3
Kz= 100 kJ/m3
Kz= 150 kJ/m3
Kz= 165 kJ/m3
Kz= 0 kJ/m3
Kz= 50 kJ/m3
Kz= 100 kJ/m3
Kz= 150 kJ/m3
Kz= 165 kJ/m3
5
shape of the vortex core is very clear.
Comparing Fig. 1 and Figs. 6 and 7, we observe that
the vortex core deformation increases as the core moves
away from the center. The deformation is zero (i.e., the
core is circular) for B = 0 and maximum when the vortex
core is on the edge of the disk, in the instant immediately
before the vortex annihilation.
To clarify this point we have drawn the magnetization
profile of the core for fields close to the annihilation field
for dots of L = 10 and 30 nm, as shown in Figs. 6a
and 7a, respectively. The dark region (blue online) in
these figures represents the core region. The profile of the
vortex core at the center of the disk is shown in Fig. 1.
The Figs. 1a, 1b and 1c show the effect of the anisotropy
on a dot of diameter 500 nm with L = 10 nm, and Figs.
1d, 1e and 1f for diameter 500 nm, with L = 30 nm.
For L = 10 nm the core keeps a nearly circular
shape, the core deformation reaches about 10 % for zero
anisotropy (Kz = 0), and for Kz = 300 kJ/m3 the defor-
mation is around 30%. Comparing Figs. 1a, 1b and 1c
with Fig. 6, it is evident the vortex core deformation in
the latter, due to an increase of its size along the y axis
and the depth of the magnetization dip.
However, for L = 30 nm, the smallest core deformation
is 30%, that corresponds to anisotropy Kz = 0, and a
larger core deformation is observed for Kz = 165 kJ/m3,
of about 100%. Therefore, the core loses its circular
shape for large anisotropy constant values Kz, leading
to a core of roughly elliptical section that is not well de-
scribed by the rigid vortex model. This is shown in Figs.
6 and 7, where it is more evident the deformation of the
vortex core, as well as the variation in the magnetiza-
tion dip. It is important to note that a higher anisotropy
constant for L = 30 nm will result in a magnetic configu-
ration that is not a vortex, as observed above. Therefore
Kz = 165 kJ/m3 is the largest value that can be consid-
ered in order to obtain a vortex state.
We observe that the core deformation is not present for
B = 0, as shown in Fig. 1. However, as the field begins
to increase, the process of deformation of the core sets
in, as can be seen in Figs. 8 and 9, plotted from values
obtained using Eq. (1); they are shown as a function of
relative core positions (pcore/R), defined as the ratio of
the distance of the core center from the center of the disk
(pcore) divided by the disk radius (R).
Figures 8 and 9 show different stages of deformation.
In the case where the vortex core is located below 25% of
the radius of the disk, the deformation can be neglected.
From this point onwards the deformation begins to in-
crease, and the maximum is reached when the core ap-
proaches the edge of the disk. Note in Figs. 8 and 9 that
for each thickness (10, 20 and 30 nm) four curves were
plotted for different diameters (400, 500, 750 and 1000
nm) and that these curves overlap; it appears to exist a
scaling law for the deformation of the core, i.e., for each
disk thickness, the deformation does not depend on the
disk diameter, it depends only on the relative position of
the vortex core.
Analytical method
200
400
600
Diameter (nm)
800
1000
FIG. 5. (Color Online) Annihilation fields versus diameter for
dots with a) and obtained by numerical calculation and b)
obtained by the analytical method.
B. Evolution of the magnetic core shape
In the search of the effect that gives rise to the dis-
agreement between the values of Ban derived by ana-
lytical method and by numerical calculation, as we men-
tioned above, we considered the possibility that this effect
would also cause a deformation of the vortex cores. Our
micromagnetic simulations show that this deformation is
in fact present, as shown in Figs. 6 and 7. Of course,
the rigid vortex model breaks down in the cases where
important deformations of the vortex core are observed.
We have therefore analyzed the evolution of the shape
of the magnetic vortex core as it moves towards the edge
of the disks, under the influence of an applied magnetic
field; the effect of varying the value of a perpendicular
anisotropy Kz was also investigated. The simulation re-
sults show a gradual deformation of the vortex cores, that
can be quantified; the vortex cores change from a cir-
cular shape to a nearly elliptical ("banana-like") shape.
Figs. 6 and 7 show images of the vortex core and the
core profile for L = 10 nm and L = 30 nm; the change in
6
FIG. 6. (Color Online) Change of the shape of the vortex core
for L = 10 nm, D = 500 nm and Kz = 300 kJ/m3 immediately
before the annihilation. a) profile of the core along the x axis
(red dotted line) and along the y axis (blue continuous line).
b) representation of the disk. c) a detail of the disk section
close to the vortex core.
FIG. 7.
(Color online) Change of the shape of the vortex
core for L = 30 nm, D = 500 nm and Kz = 165 kJ/m3 at
positions immediately before annihilation.
In a) profile of
the core along the x axis (red dotted line) and along the y
axis (blue continuous line), in b) image of the disk and c) a
detail of the disk.
V. CONCLUSIONS
In summary, by means of an analytical model and nu-
merical simulations we have obtained the annihiliation
fields for dots of different heights and anisotropy con-
stants. In all cases, the annihilation fields decrease with
increasing anisotropy constant Kz and with increasing
disk diameter. The values of Kz and disk height L have
a stronger effect on the annihilation fields of the smaller
disks. However, the anisotropy and the thickness operate
in an inverse way on the annihilation field; whereas the
increase in height increases the annihilation field, from
the analytical results using the rigid vortex model, the
increase in anisotropy decreases this field. Finally, we
have shown the variation in the deformation of the vor-
tex core δ as a function of the perpendicular anisotropy
and disk height. The occurrence of this deformation ev-
idenced in the micromagnetic simulations suggests that
it has to be taken into account in the description of the
dynamics of the magnetic vortices. The deformation of
the core does not scale with the radius of the disks, it is
only related to the relative position of the core.
ACKNOWLEDGMENTS
In Brazil we acknowledge the support of the agencies
CAPES, CNPq, FAPERJ and FAPESP. In Chile we ac-
knowledge the partial support from FONDECYT under
grants 11121214, 1120356 and 1120618, from the Center
for the Development of Nanoscience and Nanotechnology,
and from ICM P10-06-F funded by Fondo de Innovaci´on
para la Competitividad, from the MINECON.
L.
and
J.-G.
Zhu,
Chien,
1A. P. Guimaraes, Principles of Nanomagnetism (Springer,
Berlin, 2009).
2C.
Phys. Today 60, 40 (2007).
3K. Y. Guslienko, J. Nanoscience Nanotechnol. 8, 2745 (2008).
4S. Bohlens, B. Kruger, A. Drews, M. Bolte, G. Meier,
D. Pfannkuche, Appl. Phys. Lett. 93, 142508 (2008).
F. Q.
Zhu,
and
D=400, 500, 750 and 1000 nm
L = 10 nm
L = 20 nm
L = 30 nm
Kz = 0
D = 400 nm
D = 500 nm
D = 750 nm
D = 1000 nm
L=30
0.4
0.2
0.8
Relative core position
0.6
1.0
L=20
L=10
2
-
0
1
L
/
n
o
i
t
a
m
r
o
f
e
D
1.0
0.5
0.0
0.0
n
o
i
t
a
m
r
o
f
e
D
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
Relative core position
FIG. 8.
(Color online) Deformation δ = (ry − rx)/rx
for Kz = 0, L = 10, 20, and 30 nm for diameters
D = 400, 500, 750 and 1000 nm versus normalized core po-
sition (pcore/R). Note that a scaling law is apparent.
2
-
0
1
X
L
/
n
o
i
t
a
m
r
o
f
e
D
2.0
1.5
1.0
0.5
0.0
D = 400, 500, 750 and 1000 nm
L= 10 nm
L= 20 nm
L= 30 nm
L=30
Kz = 100 kJ/m3
D = 400 nm
D = 500 nm
D = 750 nm
D = 1000 nm
0.0
0.4
0.2
0.8
Relative core position
0.6
1.0
L=20
L=10
n
o
i
t
a
m
r
o
f
e
D
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.2
0.4
Relative core position
0.6
0.8
1.0
FIG. 9.
(Color online) Deformation δ = (ry − rx)/rx
for Kz = 100 kJ/m3, L = 10, 20, and 30 nm for diameters
D = 400, 500, 750 and 1000 nm versus normalized core posi-
tion (pcore/R). Note that a scaling law is apparent.
5A. Ruotolo, V. Cros, B. Georges, A. Dussaux, J. Grollier, C. De-
ranlot, R. Guillemet, K. Bouzehouane, S. Fusil, and A. Fert,
Nat. Nanotechnol. 4, 528 (2009).
6H. Jung, Y.-S. Choi, K.-S. Lee, D.-S. Han, Y.-S. Yu, M.-
Y. Im, P. Fischer, and S.-K. Kim, ACS Nano 6, 3712 (2012),
http://pubs.acs.org/doi/pdf/10.1021/nn3000143 .
7M. Bode, O. Pietzsch, A. Kubetzka, W. Wulfhekel,
D. McGrouther,
and J. N. Chapman,
S. McVitie,
7
Phys. Rev. Lett. 100, 029703 (2008).
8P. Landeros, J. Escrig, D. Altbir, D. Laroze, J. d'Albuquerque e
Castro, and P. Vargas, Phys. Rev. B 71, 094435 (2005).
9D. Altbir, J. Escrig, P. Landeros, F. S. Amaral, and M. Bahiana,
Nanotechnology 18, 485707 (2007).
10W. Zhang, R. Singh, N. Bray-Ali,
and S. Haas,
Phys. Rev. B 77, 144428 (2008).
11K. L. Metlov and Y. Lee, Appl. Phys. Lett. 92, 112506 (2008).
12M. M. Soares, E. de Biasi, L. N. Coelho, M. C. dos Santos,
F. S. de Menezes, M. Knobel, L. C. Sampaio, and F. Garcia,
Phys. Rev. B 77, 224405 (2008).
13S.-H. Chung, R. D. McMichael, D. T. Pierce, and J. Unguris,
Phys. Rev. B 81, 024410 (2010).
14E. R. P. Novais, P. Landeros, A. G. S. Barbosa,
and A. P. Guimaraes,
M. D. Martins, F. Garcia,
J. Appl. Phys 110, 053917 (2011).
15M. Rahm, M. Schneider, J. Biberger, R. Pulwey, J. Zweck,
D. Weiss, and V. Umansky, Appl. Phys. Lett. 82, 4110 (2003).
and Y.-S. Choi,
16S.-K. Kim, K.-S. Lee, Y.-S. Yu,
Appl. Phys. Lett. 92, 022509 (2008).
17F. Garcia, H. Westfahl, J. Schoenmaker, E. J. Carvalho,
A. D. Santos, M. Pojar, A. C. Seabra, R. Belkhou,
A. Bendounan, E. R. P. Novais,
and A. P. Guimaraes,
Appl. Phys. Lett. 97, 022501 (2010).
Hoffmann,
Schneider,
Zweck,
18M.
and
H.
J.
Appl. Phys. Lett. 77, 2909 (2000).
19A. Fernandez and C. J. Cerjan, J. Appl. Phys 87, 1395 (2000).
20K.
Metlov,
Guslienko
and
K.
Y.
L.
Phys. Rev. B 63, 100403 (2001).
21K. Y. Guslienko, V. Novosad, Y. Otani, H. Shima,
and
K. Fukamichi, Phys. Rev. B 65, 024414 (2001).
22J. Mejia-Lopez, D. Altbir, A. H. Romero, X. Batlle,
Schuller,
I. K.
and
I. V. Roshchin,
J. Appl. Phys 100, 104319 (2006).
C.-P. Li,
23J. Mej´ıa-L´opez, D. Altbir, P. Landeros, J. Escrig, A. H. Romero,
I. V. Roshchin, C.-P. Li, M. R. Fitzsimmons, X. Batlle, and I. K.
Schuller, Phys. Rev. B 81, 184417 (2010).
24K.-M. Wu, L. Horng, J.-F. Wang, J.-C. Wu, Y.-H. Wu, and
C.-M. Lee, Appl. Phys. Lett. 92, 262507 (2008).
25R. K. Dumas, T. Gredig, C.-P. Li, I. K. Schuller, and K. Liu,
Phys. Rev. B 80, 014416 (2009).
26G. Mihajlovi´c, M. S. Patrick, J. E. Pearson, V. Novosad,
and A. Hoffmann,
S. D. Bader, M. Field, G. J. Sullivan,
Appl. Phys. Lett. 96, 112501 (2010).
27J. P. Davis, D. Vick, J. A. J. Burgess, D. C. Fortin,
and M. R. Freeman,
P. Li, V. Sauer, W. K. Hiebert,
New J. Phys. 12, 093033 (2010).
28T. S. Machado, T. G. Rappoport,
and L. C. Sampaio,
Appl. Phys. Lett. 93, 112507 (2008).
29A. Fert, V. Cros, and J. Sampaio, Nat Nano 8, 152 (2013).
30X. Z. Yu, Y. Onose, N. Kanazawa,
J. H. Park,
and Y. Tokura,
J. H. Han, Y. Matsui, N. Nagaosa,
Nature 465 (2010), 10.1038/nature09124.
31S.-K. Kim, J. Phys. D: Appl. Phys 43, 264004 (2010).
32M. Donahue and D. Porter, "Object oriented micromagnetic
framework," (OOMMF) (1999).
33V. Novosad, K. Y. Guslienko, H. Shima, Y. Otani,
and Y. Shimada,
K. Fukamichi, N. Kikuchi, O. Kitakami,
Magnetics, IEEE Transactions on 37, 2088 (2001).
|
1106.0407 | 1 | 1106 | 2011-06-02T11:47:05 | Transmission through a quantum dot molecule embedded in an Aharonov-Bohm interferometer | [
"cond-mat.mes-hall"
] | We study theoretically the transmission through a quantum dot molecule embedded in the arms of an Aharonov-Bohm four quantum dot ring threaded by a magnetic flux. The tunable molecular coupling provides a transmission pathway between the interferometer arms in addition to those along the arms. From a decomposition of the transmission in terms of contributions from paths, we show that antiresonances in the transmission arise from the interference of the self-energy along different paths and that application of a magnetic flux can produce the suppression of such antiresonances. The occurrence of a period of twice the quantum of flux arises to the opening of transmission pathway through the dot molecule. Two different connections of the device to the leads are considered and their spectra of conductance are compared as a function of the tunable parameters of the model. | cond-mat.mes-hall | cond-mat | Transmission through a quantum dot molecule embedded in an Aharonov-Bohm
interferometer
Daniel A. Lovey, Sergio S. Gomez, and Rodolfo H. Romero∗
Instituto de Modelado e Innovaci´on Tecnol´ogica, CONICET, and
Facultad de Ciencias Exactas y Naturales y Agrimensura, Universidad Nacional del Nordeste,
Avenida Libertad 5500 (3400) Corrientes, Argentina.
(Dated: June 6, 2018)
We study theoretically the transmission through a quantum dot molecule embedded in the arms
of an Aharonov-Bohm four quantum dot ring threaded by a magnetic flux. The tunable molecular
coupling provides a transmission pathway between the interferometer arms in addition to those along
the arms. From a decomposition of the transmission in terms of contributions from paths, we show
that antiresonances in the transmission arise from the interference of the self-energy along different
paths and that application of a magnetic flux can produce the suppression of such antiresonances.
The occurrence of a period of twice the quantum of flux arises to the opening of transmission pathway
through the dot molecule. Two different connections of the device to the leads are considered and
their spectra of conductance are compared as a function of the tunable parameters of the model.
I.
INTRODUCTION
The reduction of size in the electronic devices to
nanometer scale has highlighted the importance of the
effects of quantum coherence and interference. The con-
trol of such effects is important to provide both a bet-
ter understanding of the quantum realm as well as new
functionalities to the circuits [1, 2]. Quantum interfer-
ence allows to enhance or to cancel, total or partially,
the response of the system beyond the simple classical
additive behaviour. Such an effect can pose a problem
to be avoided but also could provide new capabilities to
the device with respect to its classical counterpart [3, 4].
There is currently an increasing interest in being able to
tune the parameters of mesoscopic systems, what would
enable to manipulate their quantum behaviour for the
advantageous design and applications of future electronic
devices [5].
The characteristic quantum phenomenon of the change
of phase of the wave function along two paths enclosing
a magnetic flux, i.e. the Aharonov-Bohm (AB) effect [6],
has been envisioned for the feasible exploitation of the
quantum phase in electronic devices [4, 7–9]. Phase co-
herent effects in AB rings have been treated theoretically
in the literature [10–15]. Closely related to the concept of
coherence is the quantum interference between a discrete
state with a continuum of states. This phenomenon was
firstly studied by Fano in the spectrum of photoionization
of atoms and termed Fano effect after him [16], but was
found ubiquitous in a wide range of physical phenomena.
Interestingly, it has been observed in properly tailored
nanoscale systems [17–20]. The first tunable experiment
showing the characteristic asymmetric Fano profile in the
electron transmission was reported in an AB ring with a
quantum dot embedded in one of its arms [17]. Various
parameters, such as the gate voltage and the magnetic
∗Electronic address: rhromero@exa.unne.edu.ar
flux through the ring among others, allowed to tune the
peak and dip of the profile. More recently, a quantum
dot molecule, i.e. two coupled quantum dots, has been
embedded between the arms of an AB interferometer,
with even a larger number of tunable parameters [19]; the
transmission thus exhibits a large variety of behaviours
as a function of them. In [19] it is stated that the sim-
plest fully coherent single-mode picture is of limited use
for the interpretation of their experiments. In such a pic-
ture, the transmission is assumed to arise from a direct
reflection and another one after travelling once around
the AB ring. It is the purpose of this paper to improve
the theoretical description of the experimental results.
Here we present theoretical calculations of a model in-
spired in the system of Ref. [19] within a phase coherent
non-interacting formalism. On one hand, we assessed the
sensitivity of the conductance upon variation of the vari-
ous model parameters. On the other hand, we show that
the self-energy matrix elements, obtained from applying
a partitioning technique to the Hamiltonian, can give in-
sight on the quantum interference and its dependence on
the magnetic flux through the ring. This interpretation
in terms of contributions through pathways, allows one
to predict the onset or cancellation of the antiresonances
as a function of the parameters of the model.
This paper is organized as follows: Section II describes
the model of the device and its connections to the leads.
Section III introduce the spacial contributions to the con-
ductance by means of a partitioning technique and dis-
cusses the conditions for the onset of peaks and cancel-
lation of conductance in the transmission in terms of the
Green functions of the isolated device. In Section IV we
present the results obtained varying the various model
parameters; finally, in Section V we summarize our con-
clusions.
1
1
0
2
n
u
J
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
7
0
4
0
.
6
0
1
1
:
v
i
X
r
a
II. MODEL
We consider four quantum dots forming a ring and
coupled to two leads L and R. Sites 2 and 4 of the ring are
connected to each other forming an artificial molecule, as
shown in Fig. 1. We consider only one energy level in
FIG. 1: Scheme of the device: (a) in the (1,2)-connection
and (b) (1,3)-connection to the leads.
each dot and both the intradot and interdot electron-
electron interactions are neglected. The system shall be
described by a Hamiltonian
H = Hr + Hl + Ht,
(1)
where Hr is the Hamiltonian of the isolated bicyclic ring,
4(cid:88)
4(cid:88)
Hr =
†
εid
i di +
i=1
i=1
+ V (d
ti,i+1(d
†
2d4 + d
†
†
i+1die−iϕ)
i di+1eiϕ + d
†
4d2)
(2)
Hl is the Hamiltonian of the leads
†
εkαc
kαckα,
Hl =
(cid:88)
k,α∈L,R
(3)
(cid:88)
and Ht is the Hamiltonian describing the tunneling be-
tween the leads and the ring
Ht =
†
1 + VRckRd†
(VLckLd
n) + H.c.,
(4)
k
where εi are the on-site energy at the dots, ti,i+1 are the
nearest-neighbour hopping parameters (where t45 = t41
should be understood), V is the interdot hopping that
couples the upper and lower arms of the interferometer,
ϕ = 2πΦ/4Φ0 = πΦ/2Φ0 is the phase ϕ = πφ/2 acquired
due to interdot hopping in a magnetic field threading the
ring with a reduced flux φ = Φ/Φ0 (i.e., in units of the
quantum Φ0 = h/e), and n is the site of contact to the
right lead. The left lead is always attached to the dot
1, as shown in Fig. 1; for brevity we refer to them as
connections (1,2) and (1,3).
The current through the device can be calculated with
the Landauer equation
(cid:90)
I =
2e
h
dE T (E) [fL(E) − fR(E)] ,
(5)
2
where fL and fR are the Fermi distributions at the L and
R leads. At low temperatures, the transmission function
represents the dimensionless conductance (in units of the
quantum e2/2h) and is calculated as
T (E) = 4Tr(ΓLGr(E)ΓRGa(E)),
(6)
where Ga and Gr are the matrix representation of the
advanced and retarded Green functions, and ΓL and ΓR
are the spectral densities of the leads.
In the wide band approximation, the Green function of
the connected system is given by
Gr
1n =
1 − Γ2(g11gnn − g1n2) − iΓ(g11 + gnn)
g1n
.
(7)
where gij is the retarded Green function of the isolated
system, and ΣL = ΣR = iΓ are the self-energies of the
leads, considered to be energy independent.
III. TRANSMISSION PATHWAYS
Partitioning of the basis space is usually employed for
isolating the effects on the part of interest from the rest of
the system [21]. Here, we apply a partitioning technique
to recover the notion of spatial transmission pathways
[22]. The 4 × 4 Hamiltonian can be partitioned in terms
of 2 × 2 matrices as follows:
(cid:18) H P U
U† H Q
(cid:19)
H =
,
(8)
where H P = P HP is the part of the Hamiltonian pro-
jected on the subspace of orbitals centered on the sites
of connection 1 and n, where P = 1(cid:105)(cid:104)1 + n(cid:105)(cid:104)n, whilst
H Q is the projection of H on the complementary sub-
space Q = 1 − P . Matrices U and U† contain matrix
elements connecting states belonging to P and Q. The
Green function can be obtained by block matrix decom-
position
(cid:18) E − H P
−U
−U† E − H Q
(cid:19)−1
.
(9)
g = (E − H)−1 =
We are interested here in the Green function projected
on the subspace of the connection sites, i.e., its P -block.
Hence, gP can be obtained from the inverse of the Schur
complement of the Q-block, E − H Q,
gP = (E−H P−U (E−H Q)−1U†)−1 = (E−H P−U gQU†)−1,
(10)
from which an effective Hamiltonian can be defined as
Heff = E − (gP )−1 = H P + U gQU† = H P + Σ,
(11)
where Σ = U gQU† is the self-energy that contains the
interactions involving the orbitals not connected to the
leads. An approach similar to the one outlined above has
been used in an analytical treatment of quantum inter-
ference in a benzene ring [22].
The Green function written in terms of the self-energy,
(cid:18) E − εn − Σnn
tn1 + Σn1
gP (E) =
1
∆
t1n + Σ1n
E − ε1 − Σ11
,
(12)
(cid:19)
with ∆ = det(E − Heff ) = (E − ε1 − Σ11)(E − εn −
Σnn) − Σ1n2, contains all the matrix elements needed
for the calculation of the conductance between the sites 1
and n. Their poles are given by the zeroes of the secular
determinant ∆ = 0, while the antiresonances comes from
3
ij + ΣC
zeroes in g1n = (t1n + Σ1n)/∆. When t1n = 0, as in
the (1,3) connection, the antiresonances arise from the
zeroes of Σ1n. Interestingly, the self-energy Σij = ΣA
ij +
ΣB
ij becomes a sum of contributions throughout
paths from above (A), from below (B) and through the
interarm coupling (C). The vanishing of the transmission
occurs when the contributions from those paths interfere
destructively thus cancelling the element t1n + Σ1n of the
effective Hamiltonian.
For the (1,3) connection, the contributions become
ΣA
ΣA
ΣA
12g22,
11 = t2
13 = t12g22t23e2iϕ,
33 = t2
23g22,
41g44,
ΣB
11 = t2
13 = t41g44t34e−2iϕ,
ΣB
ΣB
33 = t2
34g44,
11 = t12g24t41(e2iϕ + e−2iϕ),
ΣC
ΣC
13 = g24(t41t23 + t12t34),
33 = t23g24t34(e2iϕ + e−2iϕ),
ΣC
(13)
(14)
(15)
g44 = (E − ε2)/D,
where
g22 = (E − ε4)/D,
g24 = V /D,
(16)
and D = (E − ε2)(E − ε4) − V 2 = (E − Ea)(E − Eb),
with Ea and Eb being the energies of the bonding (Eb)
and antibonding (Ea) orbitals of the molecule formed
between the sites 2 and 4 described by H Q, namely,
Ea,b = (ε2 + ε4)/2 ±(cid:112)V 2 + (ε2
4 − 2ε2ε4)/4.
2 + ε2
On the other hand, the conditions for the onset of
peaks of resonance in the linear conductance of the ring
connected to the leads, can also be analyzed from the
poles of the Green functions of the disconnected device.
We state that the poles of g1n will show finite (or even
perfect) transmission, while those poles of g11 or gnn
(which are not poles of g1n) will show transmission zeros
(antiresonances).
Firstly, consider a non degenerate energy eigenvalue
Ek of the disconnected device with eigenfunction ψk(cid:105)
which is a linear combination of the site orbitals i(cid:105),
If the state ψk(cid:105)
has a non vanishing weight at the connection sites 1 and
i ckii(cid:105), with cki = (cid:104)iψk(cid:105).
ψk(cid:105) = (cid:80)
n simultaneously, i.e. ck1 (cid:54)= 0 (cid:54)= ckn, then the spectral
representation
g1n(E) =
(cid:104)1ψk(cid:105)(cid:104)ψkn(cid:105)
E − Ek
, =
ck1c∗
E − Ek
kn
(17)
(cid:88)
k
(cid:88)
k
shows that Ek is a pole of g1n because the term
kn/(E − Ek) is present in the expansion (17). Fur-
ck1c∗
thermore also the terms
ck1c∗
E − Ek
k1
,
and
cknc∗
E − Ek
kn
(18)
will be present in the spectral representation of g11 and
gnn, respectively, and Ek will also be a pole of them.
That is, the poles of g1n also become poles of g11 and gnn
and all three Green functions gij diverges as gij(E) ≈
Rij/(E − Ek), where Rij = ckic∗
kn (i, j = 1, n) is the
residue of gij at the simple pole Ek. Therefore, the Green
function of the connected ring, Eq.(7), can be approxi-
mated as
G1n(E) ≈
=
1 − Γ2(R11Rnn − R2
(E − Ek) − Γ2(R11Rnn − R2
R1n(E − Ek)−1
1n)(E − Ek)−2 − iΓ(R11 + Rnn)(E − Ek)−1
R1n
1n)(E − Ek)−1 − iΓ(R11 + Rnn)
.
(19)
Taking
(cid:104)1ψk(cid:105)2(cid:104)nψk(cid:105)2 − (cid:104)1ψk(cid:105)(cid:104)ψkn(cid:105)2 = 0,
account
into
1n
=
it reduces
that R11Rnn − R2
to
G1n ≈
R1n
(E − Ek) − iΓ(R11 + Rnn)
E→Ek−→
iR1n
Γ(R11 + Rnn)
(20)
4
which shows that the transmission has a pole at E =
Ek + iΓ(R11 + Rnn) and a finite transmission T1n =
4R2
1n/(R11 + Rnn)2. The pole Ek acquires a finite width
proportional to the coupling to the leads Γ.
In the
particular case where the sites 1 and n are topologi-
cally equivalent because of the symmetry of the system,
R11 = Rnn = R1n so that perfect transmission occurs.
On the other hand, if E = Ek is a pole of g11 or gnn,
but not of g1n, the numerator g1n(Ek) of Eq. (7) is finite
whilst its denominator diverges; therefore T1n will show
an antiresonance at E = Ek.
In other words, a finite transmission occurs when the
eigenstate ψk of the isolated system have non-vanishing
projection on the orbitals 1(cid:105) and n(cid:105): (cid:104)1ψk(cid:105) and (cid:104)nψk(cid:105).
Reciprocally, if one of them equals zero, the electron of
energy E = Ek has a vanishing probability of being at
both sites, and therefore no transmission can occur.
The case when the eigenvalue Ek is degenerate requires
a modification of the above argument.
In such a case,
there are more than one states ψ(1)
. . . ψ(p)
k , ψ(2)
k having
the same energy Ek. For the sake of simplicity, consider
just two degenerate eigenfunctions ψ(p)
ki i(cid:105),
i c(p)
(p = 1, 2). The spectral representation of the Green func-
tion now reads
k (cid:105) = (cid:80)
k
(cid:88)
k
gij(E) =
Rij
E − Ek
,
Rij = c(1)
ik c(1)∗
jk +c(2)
ik c(2)∗
jk . (21)
1n = 0, valid for the nondegen-
The property R11Rnn − R2
erate case, does no longer hold here. Instead
R11Rnn − R2
1n = (c(1)
1k )2(c(2)
−c(1)
1k c(1)
nk )2 + (c(2)
1k c(2)∗
nk c(2)∗
1k )2(c(1)
nk )2
nk c(1)∗
nk − c(2)
1k c(2)
1k c(1)∗
nk ,
(22)
which can vanish or not depending on the c(p)
If R11Rnn − R2
the real part of the denominator in Eq.
near E = Ek as Γ(R11Rnn − R2
transmission becomes suppressed (T = 0).
1k and c(p)
nk .
1n = 0, all above discussion holds; if not,
(19) diverges
1n)/(E − Ek) and the
IV. RESULTS AND DISCUSSION
Firstly, consider a ring threaded by a magnetic flux
with all interdot hopping parameters equal to each other
(t12 = t23 = t34 = t41 = t) and interarm coupling V .
The on-site energies are taken as ε1 = ε3 = 0, ε2 = 2
and ε4 = 4. All the results are obtained with a coupling
to the leads Γ = 0.05. Figure 2 shows the dimensionless
conductance T (E) for the ring connected to the leads in
the configuration (1,3) (solid line), and for the three-sites
chains forming the upper (dashed line) and lower (dotted
line) arms with the side-dot 4 and 2, respectively, coupled
by V . The transmission with an applied magnetic flux
Φ = 0.1Φ0 is shown in dot-dashed line. The transmission
show four peaks at the energy eigenvalues of the systems.
FIG. 2: Transmission function of a ring with interarm cou-
pling in the connection (1,3) (solid line), and three-sites
chains with a laterally coupled side dot representing the up-
per (dashed line) and lower (dotted line) arms as a function
of the energy E. All dots are connected by the same interdot
hopping t12 = t23 = t34 = t41 = 1 and interarm couplings
V = −1, 0, 1, without magnetic flux (solid line) and with a
flux Φ = 0.1Φ0 (dot-dashed line).
(a) Ring with coupling
V = −1, (b) ring with disconnected arms (V = 0), and (c)
ring with coupling V = 1. The V couplings were chosen to
show the tuning of the antiresonance with the one for the
single chain with a lateral dot. The insets shows, in more de-
tail, the suppression of the antiresonance due to the applied
magnetic flux.
The ring with disconnected arms Figure 2(b) shows also
an antiresonance, not present in the chains because for
V = 0 there is no side-coupled dot. This suppression of
the transmission in the ring is due to the cancellation of
the contributions to the self-energy throughout the upper
and lower paths (Σ13 = ΣA
13 = 0). In general, eqs.
(14) show that the self-energy vanishes if
13 + ΣB
Σ13 = t2(g22e2iϕ + g44e−2iϕ + 2g24)
(cid:2)(E − ε4)e2iϕ + (E − ε2)e−2iϕ + 2V(cid:3) = 0(23)
=
t2
D
In absence of magnetic flux (ϕ = 0), Σ13 vanishes at the
energy E = ¯ε − V = (ε2 + ε4)/2 − V . Figures 2(a)-2(c)
depicts the tuning of the antiresonance with V , for V =
(ε2−ε4)/2, V = 0 and V = (ε4−ε2)/2, respectively, such
that the antiresonance of the ring can be made to coincide
with that from the upper and lower arms with a lateral
dot, respectively. When there is a finite magnetic flux,
Σ13 is complex and its cancellation requires vanishing
its real and imaginary parts, i.e, (2E − ε2 − ε4) cos 2ϕ +
2V = 0, and (ε2 − ε4) sin 2ϕ = 0. Both equations cannot
be satisfied simultaneously, except when ε2 = ε4, which
presents an antiresonance at ε2 − V / cos 2ϕ. Therefore,
the magnetic field eliminates the antiresonance for a ring
with different site energies ε2 (cid:54)= ε4 for arbitrary V . This
suppression of the antiresonance is shown in the insets of
Figures 2(a)-2(c) for a flux Φ = 0.1Φ0.
Application of gate potentials at dots 2 and 4 allows
to tune their on-site energies. Figure 3 shows the effect
on the transmission of varying these parameters and the
electron energy E with and without magnetic flux for
the connection (1,2). Bright lines and dark regions rep-
resent zones of high and low transmission, respectively.
Variation of ε2 (left panels) was done at ε4 = 4 while
variation of ε4 (right panels) was done at ε2 = 2.
In
absence of magnetic field (upper panels) three peaks of
conductance are visible depicted by the bright curves.
The central peak has a linear dependence on the energies
ε2 and ε4 while the external ones are weakly dependent
on them, as seen from the slope of the curves. Two an-
tiresonances are also visible, namely, a faint vertical dark
line at E = 0 independent on εi, and a vertical dark
thicker line at E = ε4 − V (upper left panel) and the
straight line E = ε4 − V (upper right panel). Hence,
both ε2 and ε4 are equally suitable for tuning the max-
ima of transmission, but only the site 4, which is not
connected to the leads is efficient for tuning the antires-
onances. The lower panels of Figure 3 show the effect
of switching on a magnetic flux. As discussed for the
connection (1,3), the antiresonances are cancelled out.
In particular, it should be noted that the antiresonance
at E = 0 turned into a peak of transmission. Also the
second antiresonance at E = ε4 − V becomes weakened
and the dark sharp straight line turns into a diffuse dark
region of low transmission. Figure 4 shows in solid lines
the transmission through an asymmetric ring where the
upper arm has hoppings much smaller than those of the
lower arm (t12 = t23 (cid:28) t34 = t41). The dotted blue
and dashed red lines are the transmissions of the up-
per and lower arms separately, calculated as three-site
chains with a central site having energy ε2 and ε4, re-
spectively, and lateral sites having on site energies ε = 0.
In Figure 4, the four peaks of conductance, correspond-
ing to connection (1,3), can be recognized as those from
the lower arm along with the on-site energy of site 2.
The transmission of the ring nearly coincides in almost
the whole range with that of the lower arm, thus show-
ing that the conduction is throughout such a pathway
at almost every energy, except for E ≈ ε2. When the
5
FIG. 3: The logarithm of the transmission function of a
ring with coupling between the arms in the connection (1,2)
as a function of the energy E and the dots energies ε2 and
ε4 with and without magnetic flux. All dots are connected
by the same interdot hopping parameters t12 = t23 = t34 =
t41 = V = 1, and the magnetic flux was taken as Φ = 0.1Φ0.
Bright lines and dark regions represent zones of high and low
transmission, respectively. Variation of ε2 (left panels) was
done at ε4 = 4 while variation of ε4 (right panels) was done
at ε2 = 2.
up/(E − ε2) (cid:28) ΣB
13 = t2
incident electron is resonant with the site 2, the trans-
mission is well described by the resonant peak of the up-
per pathway. Nevertheless, none of the paths by them-
selves can provide the onset of the antiresonance close to
E ≈ ε2. The self energy Σ13 = ΣA
13 + ΣB
13 because
down/(E − ε4), except for
13 = t2
ΣA
E ≈ ε2 when they can become comparable. Hence, in a
neighbourhood of E ≈ ε2, the self energy can be approx-
down/(ε2 − ε4) which
imated as Σ13 = t2
vanishes for E = ε2 + t2
down, that is, slightly
to the right of the peak E = ε2, thus giving the Fano-like
profile.
up/(E − ε2) + t2
up(ε4 − ε2)/t2
13 ≈ ΣB
The Fano-like peak shows the signature of the interfer-
ence between both paths, typical when a localized state
interferes with a continuum. Figures 4(a)-4(c) show the
dependence of the Fano profile with the magnetic flux.
With no magnetic flux, there is the above discussed Fano
resonance due to the path interference; the application
of a flux 0 < Φ < Φ0/4 suppress the antiresonance
leaving only a dip in the transmission which also dis-
appears at Φ = Φ0/4 leaving only the resonant peak,
as seen in 4(b). Further increase of the flux in the range
Φ0/4 < Φ < Φ0/2 produce a new dip at an energy slightly
6
field, such that
Σ13(ϕ)2 = (ΣA
13)2 + (ΣB
13 + ΣB
13)2 + (ΣC
13)ΣC
13 cos 2ϕ,
+2(ΣA
13)2 + 2ΣA
13ΣB
13 cos 4ϕ
(24)
where the first three terms represent the non-interfering
transmission along the paths A, B and C. The last two
terms contain the effect of the interference due to the
quantum and magnetic phases. It is clearly noted that
even for ϕ = 0 there is an interference between the path
contributions to the self-energy. Interestingly, there are
two periods in the magnetic phase; a period Φ = Φ0 (as-
sociated to cos 4ϕ) and a period Φ = 2Φ0 (associated to
cos 2ϕ). When there is no interarm coupling, ΣC
13 = 0,
the latter is not present. On the other hand, as soon
as a finite V exists, the self-energy acquires the longer
period modulated by the shorter one. Such a behaviour
has been observed in experiments [19] and were termed
as Fano resonances of the big and small orbits. Figure
5 shows the transmission (in a log scale) T (E, ϕ) as a
function of the energy and the magnetic flux, for vari-
ous values of the interarm coupling V = 0, 0.5 and 1,
and for the two ways of connecting to the leads. The
top (left and right) panels, corresponding to V = 0, are
the only ones showing a period Φ0 in the flux. As V
increases, the period 2Φ0 becomes apparent. Finally,
the bottom (left and right) panels show the transmis-
sion for a single subring obtained from decoupling the
sites 2 and 3 (i.e, t23 = 0), as also done in the experi-
ments [19], where the period of the small orbit is clearly
apparent. In the configuration (1,2) there are three in-
terfering paths, namely, the direct path through sites 1
12 (1 → 4 → 2) and the path
and 2 (t12), the path ΣC
12 (1 → 4 → 3 → 2), contributing to the self-energy
ΣB
Σ12(ϕ) = t12eiϕ + V t14g44e−iϕ + t14g43t31e−3iϕ. The ab-
solute square of the self-energy turns out
Σ12 = t2
12 + (ΣB
+2t12ΣB
12)2 + (ΣC
12 cos 4ϕ,
12)2 + 2(t12 + ΣB
12)ΣC
12 cos 2ϕ
(25)
where the phase of the big orbit (4ϕ) characterize the
interference between the pathways along the arms of the
ring, whilst the phase of the small orbit (2ϕ) corresponds
to the interference between them and the molecular bond.
The bottom panels of Figure 5, shows the conductance
when the hopping t23 has been set equal to zero, such
that there is a single small orbit. Nevertheless, it should
be noted a few differences visible as dark spots; they
correspond to antiresonances determined by the different
topology of the connections.
V. CONCLUSIONS
We have shown the conditions for the onset of reso-
nances and antiresonances in an artificial quantum dot
molecule embedded in the arms of an Aharonov-Bohm
interferometer, and its dependence on the tunable param-
eters. In general, the peaks of conductance are located
FIG. 4: Transmission for the connection (1,3) as a function of
the Fermi energy for an asymmetric ring with hopping param-
eters t12 = t23 = 0.2 (upper arm), t34 = t41 = 1 (lower arm)
and on-site energies ε2 = 2 and ε2 = 4 (solid line), as com-
pared to the transmissions through the upper arm only (dot-
ted blue line), and throughout the lower arm only (dashed red
line). Figures (a)-(c) correspond to a decoupled ring (V = 0)
(a) at zero magnetic field, (b) at Φ = Φ0/4, and (c) magnetic
flux Φ = Φ0/2. Figure (d) has an interarm coupling V = 0.5
and magnetic flux Φ = Φ0/2. The insets show in more detail
the behaviour of the curves around the resonance.
smaller than ε2 while moves the peak to energies slightly
higher. At Φ = Φ0/2 the dip in the transmission of the
ring becomes an antiresonance, with the resonant peak
tuned with that of the upper chain as seen in the inset
of figure 4(c). Between Φ0/2 and Φ0, the behaviour of
T (E) is reversed, such that a cycle is completed in a pe-
riod of Φ0. Figure 4(d) depicts the transmission through
the ring with an interarm coupling V = 0.5. Now the
transmission through the lower (dashed line) and upper
(dotted line) arms, including the site laterally coupled by
V , shows Fano-like resonances at ε = ε2 and at ε = ε4,
respectively. The transmission through the ring (solid
line) still remains close to that of the lower arm with a
lateral connection to site 2. Then, the overall picture for
the transmission through a ring with different connec-
tion strengths along each arm, is that of the transmis-
sion throughout the stronger pathway (i.e., the one with
larger hoppings) at almost every energy, except at the
one resonant with the energy of the site connecting the
arms where a Fano interference occurs.
In the presence of a magnetic flux, the self energy is a
complex quantity and its modulus should be considered.
Eqs. (14) shows that the flux Φ introduces a phase ±2ϕ
in the paths throughout the arms while no phase change
occurs in the self-energy corresponding to the interarm
coupling. Let us call Σ13(ϕ) the self energy with mag-
13e−2iϕ + ΣC
netic field. Then, Σ13(ϕ) = ΣA
13,
where ΣA,B,C
are the real self-energies at zero magnetic
13e2iϕ + ΣB
13
7
at the energy eigenvalue of the isolated device. A parti-
tioning technique enables to decompose the transmission
as a sum along interfering pathways. The tunability of
the coupling between the arms of the interferometer, al-
lows one to weaken or enhance the contribution through
the bond of the artificial molecule. The experimentally
observed change in the period of the Aharonov-Bohm
phase from one to twice the quantum of flux is inter-
preted as due to the opening of one transmission pathway.
Our results suggest that a modified coherent single-mode
picture including the electron reflection in the subrings
forming the small orbits, could also be of help in inter-
preting the experiments. Application of a magnetic flux
leads to a suppression of the antiresonances due to the
partial cancellation of the destructive quantum interfer-
ence. We have also discussed the differences with a con-
nection not realized experimentally in which one of the
dots of the molecule is attached to one lead. Such a con-
figuration could provide other alternatives for tuning the
conductance.
Acknowledgements
FIG. 5: The logarithm of the transmission coefficient log(T )
as a function of the electron energy E (horizontal axis) and the
magnetic flux Φ (vertical axis) given in units of the quantum
of flux Φ0, for V = 0, 0.5, and 1. All hopping parameters
are ti,i+1 = 1 and all site energies ε = 0. The case V = 0
corresponds to that of a single loop (big orbit) enclosing the
magnetic flux. The bottom pictures correspond to a single
subring with V = t12 = t34 = t41 = 1 and t23 = 0 (small
orbit)
This work was partly supported by SGCyT (Universi-
dad Nacional del Nordeste), National Agency ANPCYT
and CONICET (Argentina) under grants PI 112/07,
PICTO-UNNE 204/07 and PIP 11220090100654/2010.
[1] Y. Imry, Introduction to mesoscopic physics, 2nd Ed. Ox-
[11] M. L. Ladr´on de Guevara and P. A. Orellana, Phys. Rev.
ford University Press, Oxford (2002).
73, 205303 (2006).
[2] M. Di Ventra, Electrical transport in nanoscale systems,
[12] I. G´omez, F. Dom´ınguez-Adame and P. Orellana, J.
Cambridge University Press, Cambridge (2008).
Phys.: Condens. Matter 16, 1613 (2004).
[3] A. G. Aronov and Yu. V. Shavin Rev. Mod. Phys. 59,
[13] E. R. Hedin, Y. S. Joe and A. M. Satanin, J. Phys.:
755 (1987).
Condens. Matter 21 015303 (2009).
[4] O. Hod, R. Baer and E. Rabani, J. Phys.: Condens. Mat-
[14] X.-T. An and J.-J. Liu, Appl. Phys. Lett. 96, 223508
ter 20, 383201 (2008).
(2010).
[5] K. Barnham and D. Vvedensky (Eds.), Low-dimensional
semiconductor structures. Fundamentals and device ap-
plications, Cambridge University Press, Cambridge
(2001).
[6] Y. Aharonov and D. Bohm, Phys. Rev. 115, 485 (1959).
[7] G. Hackenbroich, Phys. Rep. 343, 463 (2001).
[8] O. Hod, R. Baer and E. Rabani, J. Phys. Chem. B 108,
14807 (2004).
[15] M. L. Ladron de Guevara, G. A. Lara, P. A. Orellana,
Physica E 42, 1637 (2010).
[16] U. Fano, Phys. Rev. bf 124, 1866 (1961).
[17] K. Kobayashi, H. Aikawa, S. Katsumoto, and Y. Iye,
Phys. Rev. Lett. 88, 256806 (2002).
[18] A. Fuhrer, P. Brusheim, T. Ihn, M. Sigrist, K. En-
sslin, W. Wegscheider, and M. Bichler, Phys. Rev. B 73,
205326 (2006).
[9] O. Hod, R. Baer and E. Rabani, Phys. Rev. Lett. 97,
[19] T. Ihn, M. Sigrist, K. Ensslin, W. Wegscheider and
266803 (2006).
M Reinwald, New J. Phys. 9, 111 (2007).
[10] M. L. Ladr´on de Guevara, F. Claro, and P. A. Orellana,
[20] A. E. Miroshnichenko, S. Flach and Y. S. Kivshar, Rev.
Phys. Rev. 67, 195335 (2003).
Mod. Phys. 82, 2257 (2010) and references therein.
[21] P.-O. Lowdin, J. Math. Phys. 3, 969 (1962).
[22] T. Hansen, G. C. Solomon, D. Q. Andrews and
M. A. Ratner, J. Chem. Phys. 131, 194704 (2009).
8
|
1906.08695 | 1 | 1906 | 2019-06-20T15:33:35 | Classification of crystalline insulators without symmetry indicators: atomic and fragile topological phases in twofold rotation symmetric systems | [
"cond-mat.mes-hall"
] | Topological crystalline phases in electronic structures can be generally classified using the spatial symmetry characters of the valence bands and mapping them onto appropriate symmetry indicators. These mappings have been recently applied to identify thousands of topological electronic materials. There can exist, however, topological crystalline non-trivial phases that go beyond this paradigm: they cannot be identified using spatial symmetry labels and consequently lack any classification. In this work, we achieve the first of such classifications showcasing the paradigmatic example of two-dimensional crystals with twofold rotation symmetry. We classify the gapped phases in time-reversal invariant systems with strong spin-orbit coupling identifying a set of three $\mathbb{Z}_2$ topological invariants, which correspond to nested quantized partial Berry phases. By further isolating the set of atomic insulators representable in terms of exponentially localized symmetric Wannier functions, we infer the existence of topological crystalline phases of the fragile type that would be diagnosed as topologically trivial using symmetry indicators, and construct a number of microscopic models exhibiting this phase. Our work is expected to have important consequences given the central role fragile topological phases are expected to play in novel two-dimensional materials such as twisted bilayer graphene. | cond-mat.mes-hall | cond-mat | Classification of crystalline insulators without symmetry indicators:
atomic and fragile topological phases in twofold rotation symmetric systems
Sander H. Kooi,1 Guido van Miert,1 and Carmine Ortix1, 2
1Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena,
Utrecht University, Princetonplein 5, 3584 CC Utrecht, the Netherlands
2Dipartimento di Fisica "E. R. Caianiello", Universit`a di Salerno I-84084 Fisciano (Salerno), Italy
(Dated: June 21, 2019)
Topological crystalline phases in electronic structures can be generally classified using the spatial
symmetry characters of the valence bands and mapping them onto appropriate symmetry indicators.
These mappings have been recently applied to identify thousands of topological electronic materials.
There can exist, however, topological crystalline non-trivial phases that go beyond this paradigm:
they cannot be identified using spatial symmetry labels and consequently lack any classification.
In this work, we achieve the first of such classifications showcasing the paradigmatic example of
two-dimensional crystals with twofold rotation symmetry. We classify the gapped phases in time-
reversal invariant systems with strong spin-orbit coupling identifying a set of three Z2 topological
invariants, which correspond to nested quantized partial Berry phases. By further isolating the set
of atomic insulators representable in terms of exponentially localized symmetric Wannier functions,
we infer the existence of topological crystalline phases of the fragile type that would be diagnosed
as topologically trivial using symmetry indicators, and construct a number of microscopic models
exhibiting this phase. Our work is expected to have important consequences given the central role
fragile topological phases are expected to play in novel two-dimensional materials such as twisted
bilayer graphene.
I.
INTRODUCTION
Since the discovery of the quantum Hall effect [1], and
its theoretical explanation in terms of the topological
properties of the Landau levels [2 -- 4], topological phases
of matter have become a rich playground for the theoreti-
cal prediction and experimental verification of new quan-
tum phenomena. From the birth of topological insulators
[5 -- 12], to topological superconductors supporting Majo-
rana zero modes [13 -- 17], to topological semimetals[18 --
29], new types of topological phases keep arising.
It
is fair to say that the major theoretical effort in the
field has been to classify, using appropriate mathemat-
ical schemes, all possible topologically distinct gapped
phases and subsequently relate them to topological in-
dices.
In the presence of internal symmetries -- time-
reversal, particle-hole and chiral symmetry -- alone, the
classification of free-fermion gapped phases has been ob-
tained in all ten symmetry classes and arbitrary number
of dimensions [30 -- 32]. The corresponding phases with
non-trivial topology feature, by the bulk-boundary cor-
respondence, protected gapless modes that are anoma-
lous [33, 34]. The chiral (helical) edge states of quantum
(spin) Hall insulators, as well as the single surface Dirac
cones of strong three-dimensional topological insulators
violating the fermion doubling theorem, are prime real-
izations of such anomalies.
In crystalline systems characterized by an additional
set of spatial symmetries, new topologically distinct
phases emerge [35 -- 38]. The non-trivial topology of a sys-
tem is then manifested in the appearance of anomalous
gapless surface modes, which are present only on surfaces
that are left invariant under the protecting spatial sym-
metry and violate stronger versions of the fermion dou-
bling theorem [39, 40]. Furthermore, crystalline symme-
tries can also yield non-trivial topological phases, dubbed
higher-order topological states [41 -- 58], characterized by
conventional gapped surfaces but with gapless anomalous
one-dimensional modes at the hinges connecting two sur-
faces related by the protecting spatial symmetry.
As long as insulating systems are concerned, the ex-
istence of anomalous surface or hinge boundary modes
is deeply connected to the fact that non-trivial topolog-
ical phases cannot be adiabatically connected to atomic
insulators, whose insulating nature can be understood
considering electrons as trapped classical point particles.
In other words, a topological non-trivial insulator only
arises when there is an obstruction in describing the sys-
tem using an atomic picture. Therefore, the ground state
of a topological non-trivial insulator cannot be repre-
sented using exponentially localized Wannier functions
respecting the internal and/or the set of spatial symme-
tries of the system [59]. This obstruction to a "Wannier-
representability", the classification in terms of topolog-
ical invariants and the existence of gapless anomalous
boundary modes can be formulated in a unique consis-
tent framework for systems equipped only with internal
symmetries [59, 60]. When adding spatial symmetries,
however, different complications arise.
First, distinct atomic insulators, which are by defini-
tion topologically trivial, generally possess different crys-
talline topological invariants. This, in turn, requires a
careful inspection of such topological indices to identify
the criteria dictating the appearance of topologically non-
trivial crystalline phases. Second, there can exist "non-
Wannierazible" topological phases in crystals which do
not possess boundaries that are left invariant under the
protecting spatial symmetry. As a result, the surfaces of
9
1
0
2
n
u
J
0
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
5
9
6
8
0
.
6
0
9
1
:
v
i
X
r
a
these systems are fully gapped even if the bulk is topolog-
ical. Notwithstanding these complications, substantial
progresses has been made with the theory of topologi-
cal quantum chemistry [61] and that of symmetry-based
indicators [62 -- 64], which allows one to discriminate all
different atomic insulators from genuine topological non-
trivial phases using the spatial symmetry character of
the valence bands and their connectivity throughout the
Brillouin zone. Combining these theories with density-
functional-theory calculations has very recently led to
catalogues containing a huge number of topological ma-
terials [65 -- 67].
Nonetheless, there exist topological phases that are
not detectable using the symmetry labels of the valence
bands. An extreme case is a system with only translation
symmetry: it can be in a topological "tenfold-way" phase
due to its internal symmetries, but it is signaled as being
topologically trivial using spatial symmetry indicators.
More importantly, there can exist topological crystalline
phases in low-symmetric crystals that are neither charac-
terizable by the symmetry content of the valence bands
nor by the tenfold-way [68]. To date, these phases lack
any classification and consequently any material realiza-
tion.
In this work, we achieve the first of such classifica-
tions. Specifically, we consider the paradigmatic example
of two-dimensional crystals with twofold rotation sym-
metry, i.e. in the wallpaper group p2, where the gapped
phases of time-reversal symmetric (non-magnetic) sys-
tems with sizable spin-orbit coupling cannot be classi-
fied with the symmetry data of the valence bands. In-
stead, we construct Berry phase related Z2 invariants to
first isolate and remove topologically non-trivial quantum
spin-Hall phases from the set of distinct gapped phases.
Thereafter, we enumerate all distinct atomic insulating
phases and classify them using a trio of Z2 topological
invariants. Using our Berry phase based classification,
we are able to determine:
i) in systems with two oc-
cupied valence bands, the existence of topological non-
trivial crystalline phases similar in nature to the fragile
phases detected by symmetry eigenvalues in other wall-
paper groups [69, 70].
ii) with four occupied valence
bands, the emergence of an additional fragile topologi-
cal crystalline phase, whose possible existence has been
overlooked so far. To underline the importance of these
findings, we point out that topological crystalline phases
of the fragile type have been predicted to occur in magic-
angle twisted bilayer graphene [71 -- 74].
This paper is organized as follows. In Sec. II we first
present the example of a time-reversal symmetric one-
dimensional atomic chain where the symmetry character
of the bands is not able to classify the distinct gapped
phases, and show that such a classification becomes in-
stead possible introducing a "partial" Berry phase Z2
invariant. We then show in Sec. III that these Z2 in-
variants can be also defined on high-symmetry lines in
the Brillouin zone of a two-dimensional crystal in the p2
wallpaper group, and can be used to first remove topo-
2
logical phases protected by time-reversal symmetry, and
then classify atomic and fragile topological phases when
two valence bands are occupied. In Sec. IV we introduce
a new Z2 invariant corresponding to a "nested" quan-
tized partial Berry phase, thanks to which we are able to
diagnose the atomic insulating phases realized with four
occupied valence bands and establish the existence of our
novel NF = 4 fragile topological insulator. The trio of
Z2 invariants is then used to classify all atomic insulating
phases for a generic number of occupied Kramers pairs
of bands in Sec. IV. Finally, we present our conclusions
and comment on extensions of our work in Sec. V.
II. MOTIVATION AND WARMUP IN 1D:
MIRROR-SYMMETRIC CHAINS
We start out by considering an atomic chain of spin
one-half electrons with time-reversal symmetry and an
additional mirror symmetry with respect to a one-
dimensional (1D) mirror point. Moreover, we will assume
inversion symmetry to be explicitly broken. The space
group G for this atomic chain is generated by
G = (cid:104){Et} ,{M0}(cid:105),
where E is the identity, t the lattice translation vector,
and M the mirror symmetry with respect to the 1D mir-
ror point. In the unit cell of this 1D crystal, there are
two distinct maximal Wyckoff positions whose site sym-
metry group, or stabilizer group, is isomorphic to the
point group Cs. The first, labelled 1a, has coordinate
x = 0 and corresponds to the origin of the unit cell. Its
stabilizer group is simply generated by {M0}. Simi-
larly, the second maximal Wyckoff position, labelled 1b,
corresponds to the edge of the unit cell with coordinate
x = 1/2 in units of the lattice constant, and its sta-
bilizer group is generated by {M1}, which is also iso-
morphic to Cs. For all other positions in the unit cell,
the stabilizer group only contains the identity. There-
fore these Wyckoff positions have multiplicity two and
coordinates (x,−x). Let us now enumerate the elemen-
tary band representations [75] for exponentially localized
Wannier functions (WFs) sitting at the maximal Wyckoff
positions 1a and 1b. They can be induced by considering
that in reciprocal space there are two mirror-symmetric
momenta in the Brillouin zone (BZ), i.e. Γ = 0 and
X = π. Moreover, since the stabilizer group of 1a does
not contain any translation, the mirror eigenvalues ±i at
Γ and X must be identical. On the contrary, the stabi-
lizer group of 1b contains a lattice translation of half a
unit cell and therefore the mirror eigenvalues at Γ and X
are opposite. The elementary band representations can
then be summarized as in Table I. Note that the "com-
posite" band representation for two symmetric WFs [57]
at the same position with opposite mirror eigenvalues ±i
have a representation content in momentum space that
is independent on whether they are centered at 1a or 1b.
i ⊕ ρ1b−i ↑ G,
This yields the equivalence ρ1a
i ⊕ ρ1a−i ↑ G (cid:39) ρ1b
3
Wyckoff position Representation Γ X
i
i
−i −i
i −i
−i
i
i ↑ G
ρ1a
ρ1a−i ↑ G
i ↑ G
ρ1b
ρ1b−i ↑ G
1a
1b
the one-
Table I. Elementary band representation for
dimensional space group of a mirror symmetric chain. The
first column indicates the maximal Wyckoff positions. The
second column the corresponding induced band representa-
tion, and the last two columns the mirror eigenvalues at the
center and edge of the 1D BZ.
which simply states that the corresponding pairs of ex-
ponentially localized WFs can be moved anywhere along
the line between the 1a and the 1b sites in opposite di-
rections.
Figure 1. (color online) Evolution of the Wilson loop eigenval-
ues for a mirror and time-reversal symmetric Aubry-Andr´e-
Harper model [cf. Appendix A and Ref. 76] at NF = 4 by
sweeping the dimerization hopping amplitude δt while pre-
serving mirror symmetry (a) and changing the phase φV away
from the mirror-symmetric point φV = −π/4 (b).
The aforementioned composite band representation
becomes a physical elementary band representation
(PEBR) [61] when time-reversal symmetry Θ is taken
into account. This is because Θ requires the complex
irreducible one-dimensional representations at Γ and X
to double. The corresponding pairs of energy bands,
however, do not derive from Wannier states with charge
centers at arbitrary positions along the chain. Kramers
theorem indeed guarantees that exponentially localized
WFs come in Kramers degenerate pairs, in which each
pair has the same center. Moreover, while an even num-
ber of Wannier Kramers pairs centered at the maximal
Wyckoff positions 1a or 1b can be freely moved away
without breaking either the mirror or time-reversal sym-
metry, with an odd number of Wannier Kramers pairs sit-
ting at 1a or 1b the center of at least one pair of Wannier
states is unmovable [53]. Put differently, the parity of
Wannier Kramers pairs centered at the maximal Wyck-
off positions 1a and 1b represent stable topological Z2 in-
dices characterizing a one-dimensional time-reversal and
mirror-symmetric insulator. More importantly, these sta-
ble topological indices cannot be read off from the sym-
metry character of the bands since only one PEBR exists.
The discrepancy between the existence of real space sta-
ble topological indices and the absence of distinct PEBRs
can be overcome using the recent finding that Kramers
pairs of bands in a mirror symmetric [76], or equivalently
C2 twofold rotation symmetric [77], atomic chain possess
a Z2 topological index defined in terms of the "partial"
polarization introduced by Fu and Kane [78], which is
quantized by the presence of these point group symme-
tries. In its U (NF ) gauge invariant form it can be written
as
νM :=
1
π
π
dk TrA(k) + i log
Pf [w(π)]
Pf [w(0)]
0
mod 2. (1)
(cid:20)
(cid:21)
In the equation above, we have introduced the non-
Abelian Berry connection Am,n(k) = (cid:104)um(k) i∂k un(k)(cid:105),
and the sewing matrix wm,n(k) = (cid:104)um(−k) Θun(k)(cid:105)
that is antisymmetric at the Γ and X points and hence
characterized by its Pfaffian Pf(w). The Z2 invariant de-
fined above can be related to the charge centers of the
Wannier Kramers pairs by introducing the unitary Wil-
son loop operator [60, 79]
Wk+2π←k = exp
k+2π
A(k(cid:48))dk(cid:48)
,
(2)
(cid:35)
(cid:34)
i
k
(cid:80)
j νj mod 1 ≡ 0, and consequently(cid:80)
where exp denotes path ordering of the exponential while
k is the Wilson loop base point. The eigenvalues of the
Wilson loop operator, exp(2πi νj), j labelling the occu-
pied bands, are independent of the base point k and
uniquely determine the Wannier centers νj. The presence
of mirror symmetry translates into a chiral symmetry for
the Wilson loop eigenvalues [70], thus implying that the
Wannier centers are restricted to the values νj = 0, 1/2
or to "unpinned" pairs (¯ν,−¯ν). Moreover, time-reversal
symmetry guarantees that each Wilson loop eigenvalue
has to be doubly degenerate. The concomitant presence
of mirror and time-reversal symmetry therefore yields
j νj mod 2 ≡ νM
can only assume the values 0 and 1. Knowing the rela-
tion between the Z2 topological invariant and the Wan-
nier centers, we can straightforwardly classify the insulat-
ing states realized in a one-dimensional mirror-symmetric
atomic chain. In fact, with a total number of occupied
bands NF = 4n+2, n being integer, an insulating atomic
chain for which νM = 0 (νM = 1) will be characterized
by the presence of an odd number of Wannier Kramers
pairs at 1a (1b).
If instead NF = 4n the system can
be described in terms of exponentially localized Wannier
functions with an even or odd number of Kramers degen-
erate pairs centered at 1a and 1b depending on whether
νM = 0 or νM = 1, respectively.
To verify the relation between the Z2 topological in-
variant νM and the Wannier centers distribution, we
have computed the Wilson loop spectrum for a time-
reversal and mirror symmetric one-dimensional spin-
ful Aubry-Andr´e-Harper model [cf. Appendix A and
a)b)0.3νν-π2-π40-12012ϕV0-12012δt i
1b
1a
Wyckoff position Representation Γ X Y M
i
i
−i −i −i −i
i −i
i −i
i −i
−i
i
i −i −i
i
−i −i
i
i
i −i −i
i
−i
i −i
i ↑ G
ρ1a
ρ1a−i ↑ G
i ↑ G
ρ1b
ρ1b−i ↑ G
i ↑ G
ρ1c
ρ1c−i ↑ G
i ↑ G
ρ1d
ρ1d−i ↑ G
1d
1c
i
i
Table II. Elementary band representation for the p2 wallpa-
per group G = (cid:104){Et} ,{C20}(cid:105). The first column indicates
the maximal Wyckoff positions; the second column the cor-
responding induced band representation, and the last two
columns the C2 eigenvalues at the Γ = {0, 0}, X = {π, 0},
Y = {0, π} and M = {π, π} points in the BZ. In time-
reversal symmetric systems, the PEBRs obey the equivalence
ρ1a ↑ G (cid:39) ρ1b ↑ G (cid:39) ρ1c ↑ G (cid:39) ρ1d ↑ G.
Ref. 76], in which the half-filled NF = 4 insulating state
undergoes a band gap closing-reopening, accompanied by
a change of the Z2 topological invariant, by sweeping the
strength of the nearest-neighbor hopping amplitude δt.
As explicitly shown in Fig. 1(a), the insulating state can
be described in terms of two Wannier Kramers pairs cen-
tered at 1a and 1b in the νM = 1 region. On the con-
trary, a νM = 0 value of the topological invariant implies
the existence of two Wannier pairs centered at two mir-
ror related, non-maximal Wyckoff positions in the unit
cell. Moreover, by breaking the mirror symmetry of the
model [see Fig. 1(b)] the position of the exponentially
localized Wannier function can be freely moved at ar-
bitrary positions in the unit cell in agreement with the
fact that the space group in this case only contains the
identity. Finally, we emphasize that the change of the Z2
invariant is associated with a band gap closing-reopening
occurring at unpinned points in the BZ [76], which is a
restatement of the fact that the topological index charac-
terizing a mirror and time-reversal symmetric insulating
chain cannot be inferred from the symmetry character of
the occupied bands.
III. WALLPAPER GROUP p2: INSULATORS
WITH TWO OCCUPIED BANDS
Having established the Z2 classification of mirror and
time-reversal symmetric insulating chains in the absence
of symmetry indicators, we next consider the main fo-
cus of this work: two-dimensional (2D) crystals possess-
ing a C2 twofold rotation symmetry. The smallest two-
dimensional wallpaper group containing C2 is p2. It has
four maximal Wyckoff positions labelled as 1a = {0, 0},
1b = {1/2, 0}, 1c = {0, 1/2} and 1d = {1/2, 1/2}. Their
stabilizer group is isomorphic to C2, which implies that in
systems with time-reversal symmetry the induced band
representations have the same symmetry character [cf.
4
Figure 2. (color online) Schematic drawing of a C2 symmetric
Brillouin zone spanned by reciprocal lattice vectors g1 and
g2 with high-symmetry points Γ, X, Y and M . The contours
along which the partial Berry phases γI
2 are calculated
are drawn in green, a typical Wilson loop operator contour,
discussed in the main text, is drawn in red.
1 and γI
Table II].
(cid:110)
k2=G2/2
indices are not all
k1=G1/2; νM
However, the parity of the Wannier Kramers pairs
centered at 1a,1b,1c,1d still represent real space sta-
ble topological indices that discriminate between non-
equivalent atomic insulating states. To classify these
different atomic insulators, we first use the fact that
in the BZ of a twofold rotation symmetric crystal,
2 H(k)C2 = H(−k) is
the C2 symmetry constraint C−1
equivalent to a one-dimensional mirror symmetry con-
straint along the time-reversal invariant non-contractible
(cid:111)
loop lines k1,2 ≡ 0, and k1,2 = G1,2/2. Therefore,
we can in principle define a quartet of Z2 invariants
k2=0; νM
νM
k1=0; νM
[c.f. Fig. 2]. These
topological
independent, however,
since the differences νM
k1,2=0 can be re-
lated [80] to the Fu-Kane-Mele (FKM) Z2 topological
invariant [6, 78] characterizing a time-reversal invariant
2D topological insulator. This follows from the fact that
k1,2=G1,2/2 − νM
νM
k1,2=0 keeps track of the evolution of the
Wannier centers during a time-reversal pumping pro-
cess [60]. Therefore, the condition νM
k1,2=0 =
1 mod 2 immediately implies a quantum spin Hall (QSH)
insulating state. When dealing with insulating crystalline
systems without anomalous edge states (trivial FKM in-
variant), we are thus left with a Z2×Z2 classification [81],
which, as we will show below, is only able to diagnose the
atomic insulating states when one Kramers pair of bands
is occupied.
k1,2=G1,2/2 − νM
k1,2=G1,2/2−νM
The assertion above can be immediately proved by us-
ing the fact that for an atomic insulator with two oc-
cupied bands, the exponentially localized Wannier Kra-
mars' pair must be centered at one of the maximal Wyck-
off positions. Hence, the corresponding center of charge
already provides a Z2 × Z2 classification. Furthermore,
the center of charge can be straightforwardly connected
to the doublet of one-dimensional invariants νM
k1,2=0 as
follows. Let us consider the Wilson loop operator in the
e1 direction W(k1+2π,k2)←(k1,k2) where (k1, k2) is the base
k1=0 νM
Wyckoff position νM
k2=0
0
0
0
1
0
1
1
1
1a
1b
1c
1d
Table III. The Z2 × Z2 classification of atomic insulators in
the p2 wallpaper group with one occupied Kramers pair, i.e.
NF = 2. The first column indicates the maximal Wyckoff
position, while the second and third column are the U (2)
gauge invariant line invariants.
point. Its eigenvalues exp [2πi νj(k2)] (j = 1, 2) depend
on the k2 coordinate of the Wilson loop base point and
the corresponding phases νj(k2) are the centers of the
one-dimensional hybrid Wannier functions [c.f. Fig. 2].
Due to time-reversal symmetry the Wannier bands realize
a Kramers related pair [c.f. Appendix B], and therefore
can be split into two time-reversed channels s = I, II
satisfying νI (k2) ≡ νII (−k2). The additional C2 rotation
symmetry mandates the Wilson loop spectrum to be chi-
ral symmetric, i.e. νI (k2) ≡ −νII (k2). As a result, the
center of charge of the Wannier Kramers pair in the e1
direction is
νI (k2)dk2 mod 1 ≡ νI (k2 = 0) mod 1 ≡ νM
k2=0
2
.
1
2π
Repeating the same argument using the Wilson loop op-
erator in the e2 direction, we therefore reach the classi-
fication of atomic insulators with one occupied Kramers
pair of bands summarized in Table III.
Strictly speaking, this classification does not enumer-
ate all possible insulating phases with a trivial FKM in-
variant. Contrary to 1D systems where all insulating
phases can be adiabatically continued to an atomic in-
sulating phase [62], in 2D systems there can exist topo-
logically non-trivial states that present an obstruction
to a representation in terms of symmetric and expo-
nentially localized WFs [69]. These topological phases
have been dubbed "fragile" topological phases since al-
though not admitting a Wannier representation by them-
selves, such a representation becomes possible when ad-
ditional trivial bands are added to the system. In recent
works, the existence and diagnosis of fragile topological
phases [70, 74, 82] have been linked to the topological na-
ture of disconnected PEBR's [61]. However, the defining
characteristic of a fragile topological phase -- the absence
of a Wannier gap in the Wilson loop spectrum that con-
sequently must display a non-trivial winding -- can exist
also in our low-symmetric crystal with a single unsplit-
table PEBR.
In fact, due to the concomitant presence of the com-
muting two-fold rotation symmetry and time-reversal
symmetry, a crystal in the p2 space group is also in-
variant under the combined antiunitary symmetry op-
eration C2Θ with (C2Θ)2 = 1. Assuming a periodic and
smooth real gauge can be found [83], this also implies that
5
the Wilson loop operator in the e1,2 direction belongs to
the orthogonal group SO(2), with the homotopy group
π1 [SO(2)] = Z guaranteeing the existence of an integer
winding number invariant [84]. A C2Θ-protected fragile
topological phase of this kind has been first discussed
in Ref. 85 and dubbed Stiefel-Whitney (SW) insulator
since the parity of the winding number corresponds to
the second SW class invariant. Note that for a SW insu-
lator to exist, the total Berry phases along the k1,2 ≡ 0
lines -- which correspond to the first SW class invari-
ant in a smooth and periodic real gauge -- must vanish.
This constraint is immediately verified in a C2 crystal
with time-reversal symmetry. On the other hand, time-
reversal symmetry also guarantees the winding number
of the Wilson loop operator to assume 2Z values, which,
in the language of Ref. 85 would imply the Z2 second SW
class invariant to be trivial.
However, in a NF = 2 insulator with time-reversal
symmetry a Wilson loop spectrum winding an even num-
ber of times cannot be unwinded. Consider the Wil-
son loop operator W(k1,k2+2π)←(k1,k2) and assume, for
instance, that the line invariant νM
k1=0 = 0. The Wil-
son loop spectrum has to display two symmetry enforced
degeneracies at k1 = 0, π with the corresponding hy-
brid Wannier centers at ν = 0. The absence of a Wan-
nier gap also implies the existence of two degeneracies at
time-reversal related momenta ¯k1,−¯k1 where the hybrid
Wannier center ν = 1/2. The C2Θ symmetry mandates
that these unpinned degeneracies can be only moved [c.f.
Appendix B and Ref. 70] pairwise (as required by time-
reversal), and consequently cannot be destroyed. Hence,
the winding of the Wilson loop spectrum is robust, which
allows for the definition of a fragile topological phase in
insulators with one occupied Kramers pair of bands. Fur-
thermore, the Wilson loop winding can occur indepen-
dent of the Z2 line invariants, thus suggesting that the
complete classification in systems with a trivial FKM in-
variant is Z2 × Z2 × Z2, where the third Z2 invariant
discriminates between gapped and winding Wilson loop
spectra.
To verify the existence of the fragile topological phase
discussed above, we introduce a four-band tight-binding
model on a C3 and mirror symmetry broken honeycomb
lattice [see Appendix C for the corresponding tight-
binding model] with a full spectral gap at half-filling
[see Fig. 3(a)].
It can be thought of as being made of
two coupled Chern insulators with opposite Chern num-
bers C = ±2, thereby respecting time-reversal symmetry.
In Fig. 3(b) we show the Wilson loop spectrum along
the k1 direction, which displays the non-trivial winding
discussed above. We close this section by emphasizing
that the existence of the fragile topological phase does
not strictly rely on the existence of a single PEBR. In
Appendix C, we introduce a C4 symmetric tight-binding
model on the square lattice where the NF = 2 atomic
insulating states can be generally represented in terms
of symmetric WFs centered at the maximal Wyckoff po-
sitions 1a = {0, 0} and 1b = {1/2, 1/2}, which possess
6
spectra for two Kramers pairs in Fig. 4, where the red
bands are centered around ν = 0 and the green bands
around ν = 1/2. The blue bands can be seen as centered
around either point [87]. Obviously, the parity of the
pairs of Wannier bands belonging to the gapped region
centered around ν = 1/2 can be linked to the line invari-
ants νM
k1,2=0. Considering for instance the spectrum of the
Wilson loop W(k1,k2+2π)←(k1,k2) and further splitting the
Wannier bands in two time-reversed channels, we imme-
diately find that νM
k1=0 = 1) if the Wilson loop
spectrum region centered at ν = 1/2 is populated by an
even [c.f. Figs. 3(b)-(d)] (odd [c.f. Fig. 3(a)]) number of
pairs of Wannier bands. Furthermore, we can obtain two
distinct Z2 invariants for the two disconnected regions of
the k1 dependent Wilson loop spectrum as follows. Let
us consider the Wilson loop operator W(k1,k2+2π)←(k1,k2),
choosing its base point on the time-reversal and twofold
rotation symmetric line k2 = 0 [c.f. Fig. 2]. The corre-
, where the subscript e2
sponding eigenstates
specifies the k2 direction of the Wilson loop, satisfy
k1=0 = 0 (νM
(cid:12)(cid:12)(cid:12)νj
e2;(k1,0)
(cid:69)
= e2πiνj (k1)(cid:12)(cid:12)(cid:12)νj
(cid:69)
(cid:105)n
(cid:69)(cid:104)
νj
e2;(k1,0)
(cid:69)
,
W(k1,2π)←(k1,0)
(cid:12)(cid:12)(cid:12)νj
(cid:12)(cid:12)(cid:12)un
= (cid:80)
n
(cid:69)
(cid:12)(cid:12)(cid:12)wj
e2;(k1,0)
e2;(k1,0)
and allow us to define the Wannier basis [42, 43],
(cid:69)
(cid:12)(cid:12)(cid:12)un
(cid:69)
(k1,0)
(k1,0)
e2;(k1,0)
e2;(k1,0)
(cid:12)(cid:12)(cid:12)wj
, where n =
1, . . . , NF . Since the quantized partial polarization asso-
ciated to the Bloch Hamiltonian eigenfunctions
is unchanged by a general U (NF ) transformation, it fol-
lows that the Z2 invariant νM
k2=0 can be equivalently com-
puted in the Wannier band eigenbasis
. More
importantly, working in such a basis allows us to de-
compose νM
k2=0 into two different Z2 invariants, which we
M;1/2
M;0
dub as ν
k2=0 , corresponding to the "nested"
k2=0 and ν
quantized partial polarizations for the two gapped sec-
tors of the Wilson loop spectrum (the red and green
bands in Fig. 4, respectively). This is because, as men-
tioned above, the two gapped regions separately sat-
isfy both time-reversal and twofold rotation symmetry,
which guarantees that the partial polarization of the
corresponding Wannier band eigenstates is quantized.
Note that Wannier bands only respect twofold rotation
and time-reversal symmetry when the Wilson loop base
points lie on a mirror symmetric line.
Having obtained three distinct Z2 topological invari-
ants, we can now classify the atomic insulating phases
enumerated above. Fig. 4(a) schematically shows the k1-
dependent Wilson loop spectrum when the two gapped
sectors are each populated with one pair of Wannier
bands, and thus νM
k1=0 = 1. The gapped sector cen-
tered around ν = 0 is further characterized by the Z2
M;0
invariant ν
k2=0, and its value dictates whether the Wan-
nier Kramers pair is centered at the maximal Wyckoff
M;0
position 1a (ν
k2=0 = 1). The same
argument can be applied to the gapped sector centered
at ν = 1/2 to set apart Wannier Kramers pairs cen-
M;0
k2=0 = 0) or 1b (ν
Figure 3. (color online) (a) Band structure of the NF = 2
fragile topological insulator with twofold rotation and time-
reversal symmetry. Energies have been measured in units of t.
There are no degeneracies other than those required by time-
reversal symmetry. (b) The Wilson loop spectrum along the
k1 direction for the half-filled insulating state. See Appendix
C for more details.
distinguishable PEBRs. The symmetry content of the oc-
cupied bands of our model is compatible with an atomic
insulator with a Wannier Kramers pair centered at 1b.
However, inspection of the Wilson loop spectrum firmly
establishes it as being a topological insulator of the frag-
ile type.
IV. Z2 × Z2 × Z2 CLASSIFICATION WITH NF = 4:
A NEW FRAGILE TOPOLOGICAL PHASE
With the Z2 × Z2 × Z2 classification of NF = 2 insu-
lating phases in our hands, we next consider insulators
with NF = 4. We will follow the same strategy used in
the preceding section, and enumerate and classify all the
existing atomic insulating phases. It is easy to see that
there exist seven distinct insulating states representable
in terms of symmetric WFs. In fact, with two Wannier
Kramers pair in the system, their centers will either lie at
two C2 related non-maximal Wyckoff positions or at two
distinct maximal Wyckoff positions. Therefore, the two
Z2 line invariants νM(k1,2 = 0) are insufficient to clas-
sify these states. Now we will show, using a procedure
similar to the "nested" Wilson loop one of topological
multipole insulators [42, 86], that it is possible to obtain
an additional Z2 invariant by identifying two sectors in
the Wilson loop spectrum, each of which carries its own
topological content, i.e.
its quantized partial polariza-
tion.
We recall that the essential characteristic of a generic
atomic insulating state is the presence of a Wannier gap
in the Wilson loop spectrum. Its chiral symmetry, dic-
tated by the C2Θ symmetry, then allows us to distinguish
two regions, one symmetrically centered around ν = 0
and one symmetrically centered around ν = 1/2, each
possessing both twofold rotation and time-reversal sym-
metry, and populated by Kramers related pairs of Wan-
nier bands. We have plotted the possible Wilson loop
a)b)νEΓXMYΓ-4-20240π2π-12012k1 7
Next, we consider insulating states where the Wannier
bands occupy only one gapped sector of the Wilson loop
spectrum, and thus νM
k1=0 = 0. Fig. 4(b),(c),(d) show the
allowed possibilities for the Wannier bands. They can
either realize a connected pair with two protected degen-
eracies at time-reversal related momenta (¯k1,−¯k1) or can
come in disconnected pairs, in which case the two pairs
can be arbitrarily assigned to the ν = 0 or the ν = 1/2
M;0
sector. Let us first inspect the value the invariants ν
k2=0
M;1/2
(ν
k2=0 ) assume for the connected pair of Wannier bands
shown in Fig. 4(b),(c). We can divide the four Wannier
bands in two time-reversed channels, that each possess
C2Θ symmetry. Then, an essential twofold degeneracy
in one channel at ν = 0 (ν = 1/2) implies a π Berry
phase [see Appendix B and Ref. 85], and consequently
M;1/2
the nested line invariant ν
k2=0 ) is enforced to be
1. As a result, the schematic Wannier bands shown in
Fig. 4(b),(c) correspond to the atomic insulating phase
with Wannier Kramers pairs centered at 1a ⊕ 1b and
1c ⊕ 1d respectively. Using similar arguments, we also
find that the disconnected Wannier bands of Fig. 4(d)
are characterized by a zero nested partial polarization
[see Appendix B]. Therefore, in this atomic insulating
state the Wannier Kramers pairs are centered at two
non-maximal Wyckoff positions related to each other by
the twofold rotation symmetry. All in all, we have thus
reached the classification summarized in Table IV of the
seven distinct atomic insulating states realizable in the
p2 wallpaper group with four occupied bands.
M;0
k2=0 (ν
M;1/2
k2=0 = 1 with ν
When comparing this with the eight allowed config-
urations for the three Z2 invariants, one can immedi-
ately recognize that an insulating state characterized
by the two nested quantization polarization invariants
M;0
M;0
ν
k1=0 = 0 cannot be rep-
k2=0 = ν
resented in terms of symmetric exponentially localized
Wannier functions. In fact, such a configuration featur-
ing essential degeneracies at unpinned momenta k1 both
around ν = 0 and ν = 1/2 would necessarily imply the
closing of the Wannier gap and hence a non-trivial wind-
ing of the Wilson loop. We thus conclude that such
an insulator corresponds to a topologically non-trivial
phase of the fragile type. Its stability against symmetry-
allowed perturbations is rooted in the fact that the pos-
sible local annihilation of the degeneracies on the ν = 0
or ν = 1/2 line requires a change of the line invariant
νM
k2=0 =
with a bandgap closing-reopening point.
mod 2, which is only possible
M;0
k2=0 + ν
M;1/2
k2=0
(cid:17)
(cid:16)
ν
Let us now present a model realization of this novel
fragile topological insulating phase. The model is built
by stacking two quantum spin-Hall insulators on the hon-
eycomb lattice -- the so-called Kane-Mele model [5] --
with opposite sign of the spin-dependent next-nearest
neighbor hopping t2 parametrizing the spin-orbit cou-
pling strength. Inversion symmetry is explicitly broken
by considering a chemical potential difference between
the two layers while the threefold rotation symmetry
breaking due to, e.g., a uniaxial strain [c.f. Fig. 5(a)] is
Figure 4.
(color online) Schematic drawings of the Wilson
loop spectra for the NF = 4 atomic insulating states in the
p2 wallapaper group. Panel (a) corresponds to four differ-
ent atomic insulating states, where the pair of bands around
ν = 0 (ν = 1/2) can have a Wannier center at 1a or 1b (1c
or 1d), respectively, which can be determined by calculating
their nested partial polarizations. Panel (b) corresponds to
an atomic insulator with Wannier Kramers pairs centered at
1a⊕1b, while panel (c) is for 1c⊕1d. In panel (d) the Wannier
functions are centered at C2 related generic points in the unit
cell.
Wyckoff positions νM
k1=0 ν
1
1
1
1
0
0
0
1a ⊕ 1c
1a ⊕ 1d
1b ⊕ 1c
1b ⊕ 1d
1a ⊕ 1b
1c ⊕ 1d
ν ⊕ −ν
M;0
k2=0 ν
0
0
1
1
1
0
0
M;1/2
k2=0
0
1
0
1
0
1
0
Table IV. The classification of atomic insulating states in the
p2 wallpaper group when two occupied Kramers pairs of bands
are occupied, i.e. NF = 4. The first column indicates the
centers of charge of the Wannier Kramers pairs; the second
column is the Z2 line invariant of the full Wilson loop spec-
trum; the second and third columns are the invariants de-
rived from the nested Wilson loops, which obey the sum rule
M;0
k2=0. The last row refers to in-
ν
k2=0 + ν
sulators where the Wannier Kramers pairs are centered at C2
related non-maximal Wyckoff positions.
mod 2 = νM
M;1/2
k2=0
(cid:16)
(cid:17)
M;1/2
tered at 1c (ν
k2=0 = 1). This,
in turn, allows us to catalogue four distinct atomic insu-
lating states.
M;1/2
k2=0 = 0) and 1d (ν
a)b)c)d)νν-0π2π12012k1ν-0π2π12012k1ν0π2π-12012k10π2π-12012k1 8
Wyckoff positions νM
k1=0 ν
1
1
0
0
0
0
1
1
1a ⊕ 1b ⊕ 1c
1a ⊕ 1b ⊕ 1d
1a ⊕ 1c ⊕ 1d
1b ⊕ 1c ⊕ 1d
1a ⊕ ν ⊕ −ν
1b ⊕ ν ⊕ −ν
1c ⊕ ν ⊕ −ν
1d ⊕ ν ⊕ −ν
M;0
k2=0 ν
1
1
0
1
0
1
0
0
M;1/2
k2=0
0
1
1
1
0
0
0
1
Table V. The Z2 × Z2 × Z2 classification of atomic insulating
states in the p2 wallpaper group when three occupied Kramers
pairs of bands are occupied, i.e. NF = 6, indicating the re-
lation between the Wannier Kramers pairs center of charges
and the ("nested") quantized partial polarization topologi-
cal invariants. This classification is generically valid for an
arbitrary number of occupied bands NF = 4n + 2 with the
integer n ≥ 1, which will only include more unpinned pairs of
Kramers pairs.
generic NF = 6 insulating state, the Z2 × Z2 × Z2 clas-
sification is saturated by enumerating the phases with
symmetric Wannier function. In fact, with three Wan-
nier Kramers pairs in the system, their centers can either
lie on three distinct maximal Wyckoff positions, or two
Wannier pairs sit at C2-related non-maximal Wyckoff po-
sition with a third pair located at one maximal Wyckoff
position. Inspecting the possible features of the Wilson
loop spectrum and iterating the arguments presented in
the former sections we reach the classification summa-
rized in Table V. Note that this classification is generally
valid for NF = 4n + 2 and n ≥ 1. In fact, by adding two
Wannier Kramers pairs to a state with NF = 6, we will
end up in one of the NF = 6 configurations [c.f. Table
V] with the addition of two Wannier Kramers pair cen-
tered at unpinned two-fold rotation symmetric momenta,
which do not change the Z2 invariants.
Finally, in Table VI we also provide the classification
of atomic insulators with four Wannier Kramers, which
is also valid for a generic number of occupied bands
NF = 4n and n > 1. Note that the distribution of Z2
invariants is strictly equivalent to the case of four occu-
pied bands. However, the topological non-trivial fragile
phase is substituted by an atomic insulator where the
four Wannier Kramers pairs are centered at the four max-
imal Wyckoff positions. In this configuration, in fact, the
Wilson loop spectrum is the superposition of Fig. 4(b)
and Fig. 4(c) which is allowed with a full Wannier gap
with a minimum number of eight Wannier bands.
VI. CONCLUSIONS
In this paper, we presented a classification of gapped
insulating phases that cannot be diagnosed using crys-
talline symmetry eigenvalues. We have showcased two-
dimensional crystals in the wallpaper group p2 where
Figure 5. (color online) (a) Top view of the strained honey-
comb bilayer realizing the NF = 4 fragile topological phase.
The intralayer spin-dependent hopping amplitude t2 has been
taken only along the zigzag direction to amplify the threefold
rotation symmetry breaking. (b) Bulk bands showing a full
spectral gap at half-filling. The parameter set is specified in
Appendix D. (c) The corresponding spectrum in a ribbon ge-
ometry demonstrate the insulating nature of the edges. (d)
Wannier bands along the k2 direction. The Wilson loop in
the k1 direction also show a similar winding.
incorporated taking direction dependent hopping ampli-
tudes t2. We also break the Mz symmetry by introducing
a Rashba spin-orbit coupling term. Being composed of
two quantum spin Hall insulators, the FKM invariant of
the half-filled model is trivial, and with an explicit inter-
layer coupling the helical edge states disappear [see Ap-
pendix D for the model Hamiltonian and Fig. 5(b) for the
ribbon spectrum]. A direct computation of the Wilson
loop spectrum [c.f. Fig. 5(d)] shows the non-trivial wind-
ing with the line invariants νM
k1,2=0 = 0 that present an
obstruction to the Wannier representation of this phase.
In Appendix D, we also present a spinful model inspired
by the px,y orbital model presented in Ref. [82] that also
realizes the NF = 4 fragile topological phase discussed
above.
V. MORE OCCUPIED BANDS
Contrary to the NF = 2 topologically non-trivial
phase, which is trivialized only when certain Kramers
pairs of bands are added , the NF = 4 topological insula-
tor discussed above is intensively fragile: it is trivialized
by the addition of a generic Kramers pair of bands. This
assertion can be immediately proved noticing that for a
a)b)EΓXMYΓ-4-20240π2π-4-2024k1Eνc)d)0π2π-12012k2 Wyckoff positions
1a ⊕ 1b ⊕ 1c ⊕ 1d
ν 1 ⊕ −ν 1 ⊕ ν 2 ⊕ −ν 2
1a ⊕ 1b ⊕ ν ⊕ −ν
1a ⊕ 1c ⊕ ν ⊕ −ν
1a ⊕ 1d ⊕ ν ⊕ −ν
1b ⊕ 1c ⊕ ν ⊕ −ν
1b ⊕ 1d ⊕ ν ⊕ −ν
1c ⊕ 1d ⊕ ν ⊕ −ν
M;1/2
k2=0
νM
k1=0 ν
0
0
0
1
1
1
1
0
M;0
k2=0 ν
1
0
1
0
0
1
1
0
1
0
0
0
1
0
1
0
Table VI. The Z2 × Z2 × Z2 classification of atomic insulating
states in the p2 wallpaper group when four occupied Kramers
pairs of bands are occupied, i.e. NF = 8, indicating the re-
lation between the Wannier Kramers pairs center of charges
and the ("nested") quantized partial polarization topologi-
cal invariants. This classification is generically valid for an
arbitrary number of occupied bands NF = 4n with the in-
teger n > 1, which will only include more unpinned pairs of
Kramers pairs.
all gapped phases have the same physical elementary
band representation, but they can be nevertheless clas-
sified with three Z2 topological invariants:
the quan-
tized nested partial polarizations -- partial Berry phases
-- along high-symmetry lines in the two-dimensional Bril-
louin zone of the system.
Using the ensuing Z2 × Z2 × Z2 classification, we have
been able to classify all atomic insulating states and iden-
tify non-Wannierazible topological crystalline phases pro-
tected by twofold rotation symmetry and time-reversal
symmetry. Since the crystal does not possess bound-
aries that are left invariant under the protecting twofold
rotation symmetry, these topological phases do not dis-
play gapless anomalous boundary modes although their
bulk is topologically non-trivial. Instead, they represent
an example of the recently discovered fragile topology,
and thus they can be trivialized with the addition of
atomic valence bands.
In this respect, we wish to em-
phasize that the fragile topological phase realized with
two occupied valence bands, which is similar in nature to
the fragile phases recently discussed in the literature in
other wallpaper groups does not necessarily decay into
a Wannierazible atomic insulating state when an addi-
tional Kramers related pair of bands are introduced. In
fact, such band addition might lead to our novel NF = 4
topological crystalline phase whose Wilson loop winding
is strictly protected by the quantization of the nested
quantized partial Berry phase in the presence of time-
reversal and twofold rotation symmetries.
An interesting direction for future research is the ex-
tension of the classification presented here to other wall-
paper and space groups where the symmetry data of
the valence bands could be combined with Berry phase
invariants to search for new topological electronic ma-
terials. Furthermore, the Berry phase invariants for
atomic insulating phases can be also exploited to ob-
tain, using the Wannier centers flow of hybrid Wannier
functions [53, 57], topological invariants for higher-order
topological insulators with helical hinge modes in non-
centrosymmetric crystals.
9
ACKNOWLEDGMENTS
C.O. acknowledges support from a VIDI grant (Project
680-47-543) financed by the Netherlands Organization for
Scientific Research (NWO). This work is part of the re-
search programme of the Foundation for Fundamental
Research on Matter (FOM), which is part of the Nether-
lands Organization for Scientific Research (NWO). S.K.
acknowledges support from a NWO-Graduate Program
grant.
Appendix A: Spin-orbit coupled
Aubry-Andr´e-Harper model
To analyze 1D atomic chains with time-reversal and
mirror symmetry with respect to a mirror point, we con-
sider a tight-binding model [76] for spin-1/2 electrons
corresponding to a generalized Aubry-Andr´e-Harper
model [88 -- 90]
(cid:88)
j,σ
+i
(cid:88)
(cid:88)
j,σ,σ(cid:48)
H =
[t0 + δt cos (πj + φt)] c
†
j+1,σcj,σ
[λ0 + δλ cos (πj + φλ)] c
†
j+1,σsy
σσ(cid:48)cj,σ(cid:48)
+
†
[V0 + δV cos (jπ/2 + φV )] c
j,σcj,σ + H.c.,
j,σ
†
where c
j,σ is the creation operator for an electron at
site j with spin σ (σ =↑,↓), and si are the conventional
Pauli matrices. The Hamiltonian contains harmonically
modulated nearest-neighbor hopping, spin-orbit coupling
and onsite potentials of amplitudes δt, δλ, and δV , and
phases φt, φλ and φV . The periodicities of the modu-
lated hopping and spin-orbit coupling have been chosen
to be of two lattice sites while the periodicity of the on-
site potential is four lattice sites. Moreover, t0, λ0 and
V0 are the site-independent amplitudes of the hopping,
spin-orbit coupling and on-site potential. The model pos-
sesses time-reversal symmetry whereas mirror symmetry
is preserved only for specific values of the phases φt,λ,V .
In Fig. 1 we have chosen the parameter set φt = φλ = π,
λ0 = 0.5t0, δλ0 = −0.3t0 and δV = t0. The Wilson loop
eigenvalues shown in Fig. 1(a) have been obtain using the
mirror-symmetric value φV = −π/4 while sweeping the
dimerized hopping amplitude δt. In Fig.1(b), instead, we
have fixed δt = −0.25t0 while sweeping φV away from the
mirror symmetric point.
Appendix B: Nested partial polarization in Wilson
loop spectra with C2 and Θ symmetry
Here we show that the nested partial polarizations are
well-defined quantities in gapped Wilson loop spectra,
and that they are quantized in the presence of C2 and Θ
symmetry. In addition, we calculate the partial polariza-
tions for various Wilson loop spectra.
Let us start by examining how the symmetries act
on the Wilson loop. Consider the Wilson loop operator
W(k1,2π)←(k1,0), C2 and Θ symmetry then require [70, 79]
C2W(k1,2π)←(k1,0)C†
2 = W†
ΘW(k1,2π)←(k1,0)Θ† = W†
(−k1,2π)←(−k1,0),
(−k1,2π)←(−k1,0),
where the complex conjugate on the right-hand side
comes from the fact that both symmetries send k → −k
and hence reverse the contour of the Wilson loop opera-
tor. Furthermore, C2 relates the eigenvalues of the Wilson
loop operator
{νi (k1)} = {−νi (−k1)} ,
and time-reversal relates
{νi (k1)} = {νi (−k1)} ,
where {} denotes the set of eigenvalues. Hence C2Θ en-
forces a chiral symmetry in the Wilson loop spectrum.
Now let us show, following Ref. [70], that a single cross-
ing in the Wilson loop spectrum is locally protected by
the combination of C2 and Θ symmetry. Let us work in
a basis where C2Θ = K, where K indicates complex con-
jugation. The symmetry restriction on the Wilson loop
operator is then
KW(k1,2π)←(k1,0)K = W(k1,2π)←(k1,0),
since C2Θ sends k → k. Since the Wilson loop operator
in this basis is an SO (N ) matrix, we can write it as
the exponential of an Hermitian matrix HW , which is
restricted by C2Θ such that
Near a two-band crossing, this restriction means that lo-
cally HW (k1) = k1 · σy. A single twofold degeneracy on
the ν = 0, 1/2 lines cannot be gapped out without break-
ing C2Θ symmetry, but only moved on the line. There-
fore, as for a Weyl point, the degeneracy can be only
removed by pair annihilation.
We now turn to the various possible Wilson loop spec-
tra, and compute their partial polarizations. In Fig. 6(a)
we have drawn a generic Wilson loop spectrum for one oc-
cupied Kramers pair. The corresponding Wannier bands
are given by
∗
HW (k1) = −HW (k1)
.
Now
10
k and ψII
where ψI
k are the Bloch waves (schematically
drawn in Fig. 6(b) along the same contour), and the
coefficients are given by the eigenvectors of the Wilson
loop matrix [see also Sec.
IV]. The Wannier bands in
Fig. 6(a) are thus obtained by a unitary transformation
on the occupied eigenstates of the Hamiltonian [(]Fig.
6(b)], and will be linear combinations thereof. These
Wannier bands satisfy [(]see again Fig. 6(a)],
k = eiθ(k)C2ϕI−k,
ϕI
ϕI
k = eiφ(k)ΘϕII−k.
The partial polarization is in this case given by the Berry
k is C2 symmetric, its Berry phase,
phase of ϕI
and hence the partial polarization is quantized to 0, π.
k. Since ϕI
Now consider two occupied Kramers pairs with two
crossings at ν = 0 (Fig. 6(c)). The colors indicate the
Kramers partners, and the dotted (solid) lines are C2
partners. To find the partial polarization we split the
bands into two time-reversal channels. The only pos-
sibility that leaves us with periodic subsets of bands is
taking the solid blue and dotted red bands together, and
the solid red and dotted blue bands together (shown in
Fig. 6(c) on the right).
Let us denote the solid blue Wannier band by a (k),
and define the red dotted band b (k) by
b (k) := C2θ (k) .
Clearly the bands are not periodic, and we have
a (2π) = b (0) ,
b (2π) = a (0) .
We now try to construct a periodic gauge by a basis
transformation, under which the partial polarization is
invariant. We define
a (k) = [a (k) + b (k)] /2,
b (k) = [a (k) − b (k)] /2.
a (2π) = [a (2π) + b (2π)] /2
= [b (0) + a (0)] /2
= a (0) ,
hence a (k) is periodic, however
b (2π) = [a (2π) − b (2π)] /2
= [b (0) − a (0)] /2
= −b (0) ,
ϕI
k = αψI
ϕII
k = γψI
k + βψII
k ,
k + δψII
k ,
is anti-periodic. Multiplying by a phase and defining
b (k) = eik/2b (k) ,
remedies this situation. Under C2Θ we now have
C2Θ a (k) = a (k) ,
C2Θ
b (k) = e−ik/2b (k)
= e−ikb (k) .
11
Using this, we can calculate the Berry phase of the two
bands separately,
γa =
=
= −
= −γa
dk a (k)
dk a (k)
†
†
†
i∂ka (k)
(C2θ)
†
dk a (k)
i∂ka (k)
(C2θ) i∂ka (k)
and
γb =
=
dk
dk
b (k)
†
b (k)
†
b (k)
i∂k
(C2θ)
†
b (k)
dk ∂kk
b (k)
†
(C2θ) i∂k
eiki∂ke−ikb (k)
= −
dk
= −γb −
= −γb − 2π,
from which we see γa = 0 and γb = π, and thus we
find that the partial polarization is π. In particular, this
shows that the nested polarization around ν = 0, 1/2 will
be π when there are an odd number of crossings in half
the Brillouin zone on this line.
Let us finally consider two occupied Kramers' pairs
with a disconnected Wilson loop spectrum (see Fig. 6(d)-
(e)). To calculate the partial polarization of these bands,
let us first consider the red Kramers pair in isolation.
To calculate the partial polarization we need to again
calculate the Berry phase of the red dotted band. This
band does not posses C2 symmetry and hence its Berry
phase will not be quantized.
In order to calculate the
partial polarization of the blue bands, we calculate the
Berry phase of the blue dotted band. However, since the
blue dotted and the red dotted bands are related by C2
symmetry, we find for their Berry phases
Red = −γI
γI
Blue,
and hence the partial polarization, which is the sum of
the two, is zero.
To calculate nested partial polarizations, we need to
select symmetric regions centered around ν = 0 and ν =
1/2. Since there are two gaps in the spectrum, we have
two choices. We can either include the pair of Kramers
pairs, or exclude them from either region. However, we
have just seen that the partial polarization of this set of
k and ϕII
Figure 6.
(a) Schematic drawing of a generic Wilson loop
spectrum with one occupied Kramers pair. The two Wan-
nier bands ϕI
k are related to each other by time-
reversal symmetry, and are themselves C2 symmetric.
(b)
Generic band structure corresponding to (a), the Wannier
states are obtained by linear combinations of the eigenstates
of the Hamiltonian ψI
k . (c) Wilson loop spectrum for two
occupied Kramers pairs with two crossings at ν = 0. The
colors denote the two different Kramers pairs, and the C2
partners have a solid (dotted) line. The two time-reversal
channels are depicted on the right, which are by themselves
C2Θ symmetric. (d) Disconnected Wilson loop of two occu-
pied Kramers pairs, again color denotes Krames pairs, dotted
(solid) the C2 partners.
(e) Corresponding band structure
with two occupied Kramers pairs.
k,ψII
bands is zero, and hence either choice will yield the same
result. Indeed for any NF , the only choice in selecting a
subset of bands centered around ν = 0, 1/2, is including
or excluding pairs of disconnected bands such as in Fig.
6(e), making the nested partial polarizations well-defined
quantities.
Finally, gapped Wilson loop spectra for arbitrary NF
a)b)ν-0π2π12012k1ΓXΓk1Eνd)e)0π2π-12012k1ΓXΓk1E-0π2π12012k1νc) A topological phase of the fragile type can also be ob-
tained in a fourfold rotation symmetric system by consid-
ering the following C4 symmetric C = +2 Chern insulator,
12
H = −1 [cos (kx) + cos (ky)] (τ0 + τz)
− 2 [cos (kx) + cos (ky)] (τ0 − τz)
− 2t [cos (kx) − cos (ky)] τx
− t2 [sin (kx) sin (ky)] τx,
where 1, 2, t, t2 are hopping amplitudes. We then again
add a time-reversal copy and couple them by
Hmix = −λ [sin (kx) τ0sy + sin (ky) τ0sx] .
The bulk bands and Wilson loop spectrum are plot-
7. The C4 operator is represented by
ted in Fig.
C4 = τz ⊗ eisz/4, and time-reversal by Θ = UK with
U = I2 ⊗ isy and K is complex conjugation. The
symmetry eigenvalues of the occupied bands at Γ are
{eiπ/4, e−iπ/4}, and at the M point {−e−iπ/4,−eiπ/4},
which are compatible with a Wannier function centered
at the maximal C4 symmetric position 1b = {1/2, 1/2}.
Appendix D: Fragile topological insulators with two
occupied Kramers pairs of bands
To construct a fragile topological insulator with two oc-
cupied Kramers pairs, we consider two copies of a quan-
tum spin Hall insulator (the Kane-Mele model [5]) with
broken C3 symmetry on a honeycomb lattice,
cα†
i,σcα
j,σ
Hα
KM = −tα (cid:88)
− iλα (cid:88)
(cid:104)i,j(cid:105),σ
− (−1)α itα
2
cα†
i,σcα
j,σ + α(cid:88)
(cid:88)
(cid:104)(cid:104)i,j(cid:105)(cid:105)x,σ
i,σ (d × s)σσ(cid:48)
cα†
ηijcα†
z
i,σ
i,σcα
j,σ
cα
j,σ(cid:48),
(cid:104)i,j(cid:105),σ,σ(cid:48)
where α = 1, 2 denotes the two copies of the Kane-
Mele model, tα denotes the hopping amplitude, (cid:104)i, j(cid:105) the
sum over nearest-neighbors, tα
2 the amplitude of intrinsic
spin-orbit coupling, (cid:104)(cid:104)i, j(cid:105)(cid:105)x the sum over next-nearest
neighbors only in the x-direction, ηij = +1 (−1) for hop-
ping in the clockwise (counter-clockwise) direction, λα
the Rashba amplitude, d the vector between two sites,
s the vector of Pauli matrices and α an on-site poten-
tial. Note that we have only taken intrinsic spin-orbit
coupling along one direction, and hence we have broken
C3 symmetry.
We now couple the two copies with the following term
Hmix (t3) = −t3
c2†
i,σc1
i,σ +
c2†
i,σc1
j,σ
(cid:88)
(cid:88)
i,σ
c2†
i,σc1
j,σ
+
(cid:104)(cid:104)i,j(cid:105)(cid:105) y,σ
(cid:88)
(cid:104)i,j(cid:105),σ
,
Figure 7. Bulk bands (a) and Wilson loop spectrum (b) for
the C4 symmetric fragile topological insulator. Plots are for
1/t = 0.1,2/t = −0.3, t2/t = 0.8, λ/t = 0.4.
will consist of linear combinations of the three cases pre-
sented here, and since the partial polarization is an ad-
ditive quantity, we know how to calculate it for arbitrary
NF .
Appendix C: Topological insulator models of the
fragile type with NF = 2
To show the existence of fragile topological insulating
phases in two-dimensional crystals with two-fold rota-
tion and time-reversal symmetries when only one pair of
Kramers related pairs are occupied, we start by consid-
ering the following two-band model of a Chern insulator
with C = +2,
H = {−t [1 + cos (ky) + cos (2kx)] − t2 cos (kx)} τx
{−t [− sin (ky) − sin (2kx)] − t2 sin (kx)} τy
− t3 sin (2kx) τz
where t, t2, t3 are hopping amplitudes, and τi are Pauli
matrices representing an internal degree of freedom. We
now add its time-reversal partner, and couple them with
(cid:26)(cid:20)
− 1
2
(cid:20) 1
2
HR = −iλ
− 1
2
sin (kx) + sin (ky)
(cid:21)
iτxsx
(cid:27)
+
cos (kx) + cos (ky)
iτysx
,
(cid:21)
where λ is a hopping amplitude and si are Pauli ma-
trices acting in spin-space. This model consists of two
time-reversed copies of Chern insulators with Chern num-
bers C = ±2, and C2 symmetry. Taken together, the
Kane-Mele invariant is trivial but the Wilson loop spec-
tra wind, indicating a fragile topological insulator pro-
tected by C2Θ symmetry. The C2 symmetry operator is
C2 = iτx ⊗ sz and the time-reversal operator Θ = UK,
with U = I2 ⊗ isyand K is complex conjugation. The
plots in the main text are for the parameters t/t2 = 0.4
t/t3 = −1.6 λ/t = 0.15.
a)b)νE0π2π-12012k1ΓXMΓ-4-2024 13
and
(cid:26)
sin [i (k2 − k1)] + sin [ik1]
k = − t2
H 1
4
−ρ sin [ik2]} τz ⊗ σy,
where tσ and tπ are the hopping amplitudes for the σ and
π pairing, t2 is the amplitude of next-nearest-neighbor
hopping and σi and τi are Pauli matrices that act in or-
bital and sublattice space respectively. α and ρ are two
parameters we have introduced to break the C3 symme-
try. For α = ρ = 1, the C3, symmetry is preserved and
our Hamiltonian is equivalent to the one in Ref. [82].
We now take two copies of two copies of Hpxpy (k),
where one copy has spin pointing in the positive x-
direction, and the other spin pointing in the negative
x-direction. In addition, we shift the momentum along
the x-direction of the copies in opposite direction:
H = Hpxpy (k − x)←(cid:105)(cid:104)← + Hpxpy (−k + x )
+ Hmix →(cid:105)(cid:104)← ,
∗ →(cid:105)(cid:104)→
(D1)
where the spins are mixed by
Hmix = −iλ sin (kx) τ0 ⊗ σ0.
This Hamiltonian has C2 and Θ symmetry, where C2 =
−τ0σxeisxπ/2, and Θ = UK with U = −iτ0σ0sy and K
complex conjugation, and τi, σi, si Pauli matrices acting
in orbital-space, sublattice-space and spin-space respec-
tively. Fig. 8 shows the bulk band spectrum and the
Wilson loop spectrum.
Figure 8. Bulk band spectrum (a) and Wilson loop spectrum
(b) of the Hamiltonian Hpxpy for = 0.5, tπ/tσ = 1.5, t2/tσ =
3.75, λ/tσ = 1.2
2 and t2
where (cid:104)(cid:104)i, j(cid:105)(cid:105)y denotes next-nearest neighbor hopping
along the y-direction. When t1
2 have a differ-
ent sign, this Hamiltonian can be in a fragile topolog-
ical phase. The time-reversal operators is Θ = UK
with U = iτ0σ0sy and the twofold rotation operator
C2 = iτ0σxsz, where τi, σi and si are Pauli matrices
that act in copy-space, sub-lattice space and spin-space
respectively. The plots in the main text are made for
2/t1 = −0.9,
the parameters t2/t1 = 1.1, t1
1/t1 = −2/t1 = 0.1, λ1/t1 = λ2/t1 = 0.15, t3/t1 =
0.25.
2/t1 = 1.1, t2
A different way to construct a model exhibiting this
fragile topological phase is by considering a model of px,y
orbitals on a honeycomb lattice introduced in Ref. [82],
(cid:32)
(cid:33)
Hpxpy (k) =
0 hk
†
h
k 0
+ H 1
k ,
with
(cid:0)1 + α e−ik2 + e−ik1(cid:1) (tσ + tπ)
(cid:18)
(cid:19)
(cid:0)−1 + e−ik1(cid:1) (tσ − tπ) σx,
+ α e−ik2 − 1
2
e−ik1
− 1
2
1
hk =
2
− 1
2
√
+
3
4
(tσ − tπ) σz
[1] K. v. Klitzing, G. Dorda, and M. Pepper, Phys. Rev.
Lett. 45, 494 (1980).
[2] D. J. Thouless, M. Kohmoto, M. P. Nightingale, and
M. den Nijs, Phys. Rev. Lett. 49, 405 (1982).
[3] B. I. Halperin, Phys. Rev. B 25, 2185 (1982).
[4] M. Kohmoto, Ann. Phys. (N.Y.) 160, 343 (1985).
[5] C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801
(2005).
[6] C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 146802
(2005).
[7] B. A. Bernevig, T. L. Hughes, and S.-C. Zhang, Science
314, 1757 (2006).
[8] M. Konig, S. Wiedmann, C. Brune, A. Roth, H. Buh-
mann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang,
Science 318, 766 (2007).
[9] H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and
S.-C. Zhang, Nat. Phys. 5, 438 (2009).
[10] L. Fu, C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 98,
106803 (2007).
[11] C. Brune, C. Liu, E. Novik, E. Hankiewicz, H. Buhmann,
Y. Chen, X. Qi, Z. Shen, S. Zhang, and L. Molenkamp,
Phys. Rev. Lett. 106, 126803 (2011).
[12] B. Rasche, A. Isaeva, M. Ruck, S. Borisenko, V. Zabolot-
nyy, B. Buchner, K. Koepernik, C. Ortix, M. Richter,
a)b)νEΓXMYΓ-4-20240π2π-12012k1 14
and J. Van Den Brink, Nat. Mat. 12, 422 (2013).
[43] W. A. Benalcazar, B. A. Bernevig, and T. L. Hughes,
[13] V. Mourik, K. Zuo, S. M. Frolov, S. Plissard, E. P.
and L. P. Kouwenhoven, Science 336, 1003
Bakkers,
(2012).
[14] R. M. Lutchyn, J. D. Sau, and S. D. Sarma, Phys. Rev.
Lett. 105, 077001 (2010).
Physical Review B 96, 245115 (2017).
[44] F. Schindler, Z. Wang, M. G. Vergniory, A. M. Cook,
A. Murani, S. Sengupta, A. Y. Kasumov, R. Deblock,
S. Jeon, I. Drozdov, et al., Nat. Phys. 14, 918 (2018).
[45] M. Geier, L. Trifunovic, M. Hoskam, and P. W. Brouwer,
[15] L. Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407
Phys. Rev. B 97, 205135 (2018).
(2008).
[16] C. Beenakker, Ann. Rev. Cond. Mat. Phys. 4, 113 (2013).
[17] J. Alicea, Rep. Prog. in Phys. 75, 076501 (2012).
[18] N. Armitage, E. Mele, and A. Vishwanath, Rev. Mod.
Phys. 90, 015001 (2018).
[19] S.-M. Huang, S.-Y. Xu,
I. Belopolski, C.-C. Lee,
G. Chang, B. Wang, N. Alidoust, G. Bian, M. Neupane,
C. Zhang, et al., Nat. Comm. 6, 7373 (2015).
[20] B. Lv, H. Weng, B. Fu, X. Wang, H. Miao, J. Ma,
P. Richard, X. Huang, L. Zhao, G. Chen, et al., Phys.
Rev. X 5, 031013 (2015).
[21] S.-Y. Xu,
I. Belopolski, N. Alidoust, M. Neupane,
G. Bian, C. Zhang, R. Sankar, G. Chang, Z. Yuan, C.-C.
Lee, et al., Science 349, 613 (2015).
[22] E. Haubold, K. Koepernik, D. Efremov, S. Khim, A. Fe-
dorov, Y. Kushnirenko, J. van den Brink, S. Wurmehl,
B. Buchner, T. Kim, et al., Phys. Rev. B 95, 241108
(2017).
[46] C. W. Peterson, W. A. Benalcazar, T. L. Hughes, and
G. Bahl, Nature 555, 346 (2018).
[47] M. Serra-Garcia, V. Peri, R. Susstrunk, O. R. Bilal,
T. Larsen, L. G. Villanueva, and S. D. Huber, Nature
555, 342 (2018).
[48] E. Khalaf, Phys. Rev. B 97, 205136 (2018).
[49] M. Ezawa, Phys. Rev. Lett. 120, 026801 (2018).
[50] M. Ezawa, Phys. Rev. B 97, 155305 (2018).
[51] J. Langbehn, Y. Peng, L. Trifunovic, F. von Oppen, and
P. W. Brouwer, Phys. Rev. Lett. 119, 246401 (2017).
[52] M. Sitte, A. Rosch, E. Altman, and L. Fritz, Phys. Rev.
Lett. 108, 126807 (2012).
[53] Z. Song, Z. Fang, and C. Fang, Phys. Rev. Lett. 119,
246402 (2017).
[54] S. Imhof, C. Berger, F. Bayer, J. Brehm, L. W.
Molenkamp, T. Kiessling, F. Schindler, C. H. Lee,
M. Greiter, T. Neupert, et al., Nat. Phys. 14, 925 (2018).
and S. Wan, arXiv preprint
[55] Y. Xu, R. Xue,
[23] A. Lau, K. Koepernik, J. van den Brink, and C. Ortix,
arXiv:1711.09202 (2017).
Phys. Rev. Lett. 119, 076801 (2017).
[24] X. Wan, A. M. Turner, A. Vishwanath,
Savrasov, Phys. Rev. B 83, 205101 (2011).
[56] C.-H. Hsu, P. Stano, J. Klinovaja, and D. Loss, Phys.
and S. Y.
Rev. Lett. 121, 196801 (2018).
[57] G. van Miert and C. Ortix, Phys. Rev. B 98, 081110
[25] A. A. Burkov and L. Balents, Phys. Rev. Lett. 107,
(2018).
127205 (2011).
[58] S. H. Kooi, G. Van Miert, and C. Ortix, Phys. Rev. B
[26] A. A. Zyuzin, S. Wu, and A. A. Burkov, Phys. Rev. B
98, 245102 (2018).
85, 165110 (2012).
[59] A. A. Soluyanov and D. Vanderbilt, Phys. Rev. B 83,
[27] A. Lau and C. Ortix, Phys. Rev. Lett. 122, 186801
035108 (2011).
(2019).
[28] T. Ojanen, Phys. Rev. B 87, 245112 (2013).
[29] A. A. Soluyanov, D. Gresch, Z. Wang, Q. Wu, M. Troyer,
X. Dai, and B. A. Bernevig, Nature 527, 495 (2015).
[30] A. Altland and M. R. Zirnbauer, Phys. Rev. B 55, 1142
(1997).
[60] R. Yu, X. L. Qi, A. Bernevig, Z. Fang, and X. Dai, Phys.
Rev. B 84, 075119 (2011).
[61] B. Bradlyn, L. Elcoro, J. Cano, M. G. Vergniory,
Z. Wang, C. Felser, M. I. Aroyo, and B. A. Bernevig,
Nature 547, 298 (2017).
[62] H. C. Po, A. Vishwanath, and H. Watanabe, Nature
[31] A. P. Schnyder, S. Ryu, A. Furusaki, and A. W. Ludwig,
Communications 8, 50 (2017).
Phys. Rev. B 78, 195125 (2008).
[63] J. Kruthoff, J. de Boer, J. van Wezel, C. L. Kane, and
[32] A. Kitaev,
in AIP Conference Proceedings, Vol. 1134
R.-J. Slager, Phys. Rev. X 7, 041069 (2017).
(AIP, 2009) pp. 22 -- 30.
[64] Z. Song, T. Zhang, Z. Fang, and C. Fang, Nat. Comm.
[33] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045
9, 3530 (2018).
(2010).
[65] T. Zhang, Y. Jiang, Z. Song, H. Huang, Y. He, Z. Fang,
[34] X.-L. Qi and S.-C. Zhang, Rev. Mod. Phys. 83, 1057
H. Weng, and C. Fang, Nature 566, 475 (2019).
(2011).
[35] L. Fu, Phys. Rev. Lett. 106, 106802 (2011).
[36] T. H. Hsieh, H. Lin, J. Liu, W. Duan, A. Bansil, and
[66] M. Vergniory, L. Elcoro, C. Felser, N. Regnault, B. A.
Bernevig, and Z. Wang, Nature 566, 480 (2019).
[67] F. Tang, H. C. Po, A. Vishwanath, and X. Wan, Nature
L. Fu, Nat. Comm. 3, 982 (2012).
566, 486 (2019).
[37] J. Liu, T. H. Hsieh, P. Wei, W. Duan, J. Moodera, and
[68] Z. Song, L. Elcoro, N. Regnault, and B. A. Bernevig,
L. Fu, Nat. Mat. 13, 178 (2014).
arXiv e-prints , arXiv:1905.03262 (2019).
[38] T. H. Hsieh, J. Liu, and L. Fu, Phys. Rev. B 90, 081112
[69] H. C. Po, H. Watanabe, and A. Vishwanath, Phys. Rev.
(2014).
Lett. 121, 126402 (2018).
[39] C. Fang and L. Fu, arXiv preprint arXiv:1709.01929
[70] B. Bradlyn, Z. Wang, J. Cano, and B. A. Bernevig, Phys.
(2017).
[40] E. Khalaf, H. C. Po, A. Vishwanath, and H. Watanabe,
Phys. Rev. X 8, 031070 (2018).
[41] F. Schindler, A. M. Cook, M. G. Vergniory, Z. Wang,
S. S. Parkin, B. A. Bernevig, and T. Neupert, Sci. Adv.
4, eaat0346 (2018).
[42] W. A. Benalcazar, B. A. Bernevig, and T. L. Hughes,
Science 357, 61 (2017).
Rev. B 99, 045140 (2019).
[71] Y. Cao, V. Fatemi, S. Fang, K. Watanabe, T. Taniguchi,
and P. Jarillo-Herrero, Nature 556, 43
E. Kaxiras,
(2018).
[72] Y. Cao, V. Fatemi, A. Demir, S. Fang, S. L. Tomarken,
J. Y. Luo, J. D. Sanchez-Yamagishi, K. Watanabe,
T. Taniguchi, E. Kaxiras, et al., Nature 556, 80 (2018).
[73] J. Ahn, S. Park, and B.-J. Yang, Phys. Rev. X 9, 021013
15
(2019).
[74] H. C. Po, L. Zou, T. Senthil, and A. Vishwanath, Phys.
Rev. B 99, 195455 (2019).
[75] J. Zak, Phys. Rev. B 26, 3010 (1982).
[76] A. Lau, J. van den Brink, and C. Ortix, Phys. Rev. B
94, 165164 (2016).
Phys. Rev. Lett. 120, 266401 (2018).
[83] A real gauge can be formulated as C2Θψ(cid:105) = ψ(cid:105).
[84] T. Bzdusek and M. Sigrist, Phys. Rev. B 96, 155105
(2017).
[85] J. Ahn, D. Kim, Y. Kim, and B.-J. Yang, Phys. Rev.
Lett. 121, 106403 (2018).
[77] G. van Miert and C. Ortix, Phys. Rev. B 96, 235130
[86] S. Franca, J. van den Brink, and I. C. Fulga, Phys. Rev.
(2017).
B 98, 201114 (2018).
[78] L. Fu and C. L. Kane, Phys. Rev. B 74, 195312 (2006).
[79] A. Alexandradinata, X. Dai, and B. A. Bernevig, Phys.
Rev. B 89, 155114 (2014).
[87] Since we have to take a region symmetrically centered
around ν = 0, 1/2 we have to either include both or nei-
ther of the blue bands.
[80] J. Kruthoff, J. de Boer, and J. van Wezel, arXiv e-prints
[88] P. G. Harper, Proceedings of the Physical Society. Section
, arXiv:1711.04769 (2017).
A 68, 874 (1955).
[81] G. van Miert and C. Ortix, Phys. Rev. B 97, 201111
[89] S. Aubry and G. Andr´e, Ann. Isr. Phys. Soc. 3, 133
(2018).
(1980).
[82] J. Cano, B. Bradlyn, Z. Wang, L. Elcoro, M. G.
Vergniory, C. Felser, M. I. Aroyo, and B. A. Bernevig,
[90] S. Ganeshan, K. Sun, and S. Das Sarma, Phys. Rev.
Lett. 110, 180403 (2013).
|
1109.2941 | 1 | 1109 | 2011-09-13T21:39:40 | Fragility of multi-junction flux qubits against quasiparticle tunneling | [
"cond-mat.mes-hall"
] | We study decoherence in superconducting qubits due to quasiparticle tunneling which is enhanced by two known deviations from the equilibrium BCS theory. The first process corresponds to tunneling of an already existing quasiparticle across the junction. The quasiparticle density is increased, e.g., because of an effective quasiparticle doping of the system. The second process is quasiparticle tunneling by breaking of a Cooper pair. This can happen at typical energies of superconducting qubits if there is an extended quasiparticle density inside the gap. We calculate the induced energy decay and pure dephasing rates in typical qubit designs. Assuming the lowest reported value of the non-equilibrium quasiparticle density in Aluminum, we find for the persistent-current flux qubit decay times of the order of recent measurements. Using the typical sub-gap density of states in Niobium we also reproduce observed decay times in the corresponding Niobium flux qubits. | cond-mat.mes-hall | cond-mat |
Fragility of multi-junction flux qubits against quasiparticle tunneling
Institut fur Theoretische Festkorperphysik and DFG-Center for Functional Nanostructures (CFN),
Karlsruhe Institute of Technology, D-76128 Karlsruhe, Germany
Juha Leppakangas and Michael Marthaler
We study decoherence in superconducting qubits due to quasiparticle tunneling which is enhanced
by two known deviations from the equilibrium BCS theory. The first process corresponds to tunnel-
ing of an already existing quasiparticle across the junction. The quasiparticle density is increased,
e.g., because of an effective quasiparticle doping of the system. The second process is quasiparticle
tunneling by breaking of a Cooper pair. This can happen at typical energies of superconducting
qubits if there is an extended quasiparticle density inside the gap. We calculate the induced energy
decay and pure dephasing rates in typical qubit designs. Assuming the lowest reported value of
the non-equilibrium quasiparticle density in Aluminum, we find for the persistent-current flux qubit
decay times of the order of recent measurements. Using the typical sub-gap density of states in
Niobium we also reproduce observed decay times in the corresponding Niobium flux qubits.
PACS numbers: 42.55.-f,85.25.Cp,03.65.Yz
I.
INTRODUCTION
A basic building block of a superconducting quan-
tum bit is the Josephson junction, which allows coher-
ent Cooper-pair tunneling. This Josephson current pro-
vides the necessary non-linear element in an electric cir-
cuit and enables reduction of the externally controllable
quantum dynamics to involve only two eigenstates1. A
drawback for superconducting qubits has been that these
systems can be very sensitive to various effects in their
nearby environments. The influence of two major deco-
herence sources, charge fluctuations and two-level fluc-
tuators, have been substantially reduced in recent years.
Qubits that are less sensitive to changes in background
charge have been build2,3, while fluctuators have been re-
moved by decreasing the junction size. Recently, trans-
mons and persistent-current flux (p-flux) qubits with ex-
tremely long decay times have been demonstrated4,5 . It
is therefore of great interest to investigate mechanisms of
decoherence that were previously unobservable. Temper-
ature dependent decay time measurements in phase6 and
transmon qubits7 suggest that non-equilibrium quasipar-
ticles might have now become the main factor limiting
the decay times of superconducting qubits.
In this work we analyze qubit decay and dephasing due
to quasiparticle tunneling. As the source of tunneling we
consider the two following deviations from the equilib-
rium BCS state of superconductors. The first one is a
non-equilibrium distribution of quasiparticles, which cor-
responds to a finite quasiparticle density above the gap,
present at all temperatures8 -- 12. Non-equilibrium quasi-
particles could originate in a quasiparticle diffusion from
higher temperature regions in an experiment, or through
stray radiation, and are relatively long lived due to slow
quasiparticle recombination rate 13 -- 16. The second pro-
cess we consider is quasiparticle tunneling by breaking of
a Cooper pair, which can occur at typical energies of su-
perconducting qubits if there is an extended quasiparticle
density inside the gap. It has long been observed that the
number of states inside the gap is vastly larger than the
predictions of BCS theory17. This effect is especially pro-
nounced in Niobium, a material that is widely used in the
production of qubits18. Nonetheless, Aluminum based
superconducting devices are observed to posses sub-gap
states too10,19, but with considerably smaller density as
Niobium.
Our results are that the two quasiparticle processes
result in a similar type of qubit decay rate. This pro-
vides a clear comparison between the magnitudes of de-
coherence due to the two sources. For conventional Alu-
minum qubits non-equilibrium quasiparticles should have
a more significant impact on decoherence, for Niobium
qubits the sub-gap density of states. We also find that
the sensitivity to quasiparticle tunneling is vastly differ-
ent for differing qubit designs. By using the lowest re-
ported density for non-equilibrium quasiparticles in Alu-
minum10 we obtain p-flux qubit decay times similar to
recent experiments5, whereas for other qubit types the
results are from two to three orders of magnitude greater
than the observed ones. For Niobium p-flux qubits we
also reproduce usual experimental decay times by as-
suming a Dynes-type of quasiparticle sub-gap states, ob-
served in various other experiments20. These central re-
Qubit type
Transmon21
Phase6
Capacitively-shu. flux22
Persistent-current flux23
Non. QP (Al) Sup-gap DOS (Nb)
1.2 ms
0.6 ms
80 µs
12 µs
20 µs
14 µs
3 µs
0.3 µs
TABLE I. Comparison of decay times obtained by assum-
ing a non-equilibrium quasiparticle density nqp = 0.033/µm3
(second column, Aluminum) or a Dynes parameter γNb =
ΓD/∆ = 10−2 (third column, Niobium). We used qubit pa-
rameters specified in each of the citations at each qubit. We
also assume ∆Al = ∆Nb/7 = 180 µeV and the validity of
the Ambegaokar-Baratoff relation. Typical sub-gap density
of states in Aluminum (γAl ∼ 10−4
− 10−7) does not limit the
coherence here.
sults are summarized in Table I.
The paper is organized as follows.
In section II we
introduce the Hamiltonian and methods describing the
qubit-quasiparticle dynamics. The section III is devoted
to discussion of decoherence processes and the corre-
sponding rate equations. We also discuss decay rates for
single-junction qubits obtained by using typical experi-
mental parameters of the quasiparticle environments. In
section IV we generalize the treatment to multi-junction
qubits, where a special concentration is given to flux
qubits in their different designs. In section V we sum-
marize the results.
II. FOUNDATIONS
Our starting point is the division of the total Hamilto-
nian into three parts,
Htotal = Hqubit + Hqp + HT.
(1)
Here the qubit Hamiltonian Hqubit describes the collec-
tive degrees of freedom that constitute our two-level sys-
tem. The quasiparticle Hamiltonian Hqp describes the
electronic degrees of freedom in the superconductors,
treated independently of the collective part. Interaction
between these two parts emerges due to single-electron
tunneling modeled by the tunneling Hamiltonian HT. It
describes, e.g., quasiparticle tunneling across the Joseph-
son junction which can cause transitions between the
eigenstates of the qubit. In the following we discuss in
more detail the central properties of each of the three
parts.
A. Single-junction qubit Hamiltonian
As the general single-junction qubit Hamiltonian we
inductive, and
use the following sum of capacitive,
Josephson coupling energy
Hqubit = EC N 2 +
EL
2
(ϕ − ϕext)2 − EJ cos ϕ.
(2)
Here N is the number operator of electron charges on
the junction capacitor C.
It is a conjugated variable
to the phase difference across the junction ϕ, satisfying
[ϕ, N/2] = i. This choice of qubit Hamiltonian corre-
sponds to the phase and dc-flux qubits, i.e., when the
junction is placed in a superconducting loop with induc-
tive energy EL and thread by flux ϕext. For the trans-
mon one has EL = 0 and periodic commutation relations
[N/2, e±iϕ] = ±e±iϕ, related to the 2e-quantization of
the charge that tunnels across the Josephson junction.
All qubits we consider work in the limit where the Joseph-
son coupling energy EJ is larger than the single-electron
charging energy EC = e2/2C. Generalization to multi-
junction qubits is straightforward, see section IV.
2
B. Quasiparticle degrees of freedom
The quasiparticle degrees of freedom in superconduct-
ing leads are modeled by the Hamiltonian Hqp. For all
further calculations the quasiparticle properties are as-
sumed to be independent of the qubit state. We consider
here two models as two separated causes of quasiparticle
tunneling at energies well below the superconducting gap
∆. We label these as model I and model II.
Signatures of the electronic structure in the two models
are found from correlation functions of type,
G>
αα(k, t) =Dckα(t)c†
αβ(k, t) =Dc†
kα(t)c†
kαE , G<
−kβE , F <
kαckα(t)E ,
αα(k, t) =Dc†
αβ(k, t) = hckαc−kβ(t)i .
(3)
F >
Here c(†)
kα is an electron annihilation (creation) operator of
the state k with spin α (α 6= β). The Fourier transforms
of the correlation functions are related to spectral and
distribution functions as24
G≷
F ≷
↑↓(k, ω) = −F ≷
αα(k, ω) = A(k, ω)f ±(ω),
↓↑(k, ω) = B(k.ω)f ±(ω).
(4)
Here f − = f and f + = 1 − f .
In equilibrium f =
feq(ω) = 1/[1 + exp(ω/kBT )]. We define the normalized
density of states n and the pair density p as
n(ω) =
p(ω) =
1
πD Xk
πD Xk
1
A(k, ω),
B(k, ω).
(5)
Here D is the density of states nearby the Fermi surface,
including spin. These functions, added with the distri-
bution function f , have their own characteristic forms in
the two models and are all we need to know about the
quasiparticle environments in the final forms of the qubit
decoherence rates (see section III).
1. Model I: Non-equilibrium quasiparticles
In model I we assume that in each lead quasiparticles
can be described by the BCS Hamiltonian but exist with
a general (non-equilibrium) probability f .
In the BCS
model the quasiparticle and pair densities have the form
n(ω) =
p(ω) =
Θ(ω2 − ∆2)sgn(ω),
Θ(ω2 − ∆2)sgn(ω).
(6)
ω
√ω2 − ∆2
√ω2 − ∆2
∆
An important quantity is the total density of quasiparti-
cles
nqp = 2DZ ∞
∆
n(ω)f (ω)dω.
(7)
In calculations nqp is assumed to be a given constant.
This model has also been investigated in Refs. 11 and 12.
III. DECOHERENCE RATES
3
2. Model II: Sub-gap density of states
As the other source of quasiparticles we consider the
presence of quasiparticle states below the gap. We as-
sume that the densities can be expressed in the same form
as for the BCS theory, but with the following broadening,
ω + iΓD
(8)
∆ + i∆2
p(ω + iΓD)2 − (∆ + i∆2)2) sgn(ω),
p(ω + iΓD)2 − (∆ + i∆2)2) sgn(ω).
n(ω) = Re(
p(ω) = Re(
Here ΓD ≪ ∆ is the so-called Dynes parameter25 and
∆2 ≪ ∆ is a possible imaginary part of the supercon-
ducting gap24. We consider ΓD and ∆2 to be given pa-
rameters and independent of energy. The effect of these
modifications of the BCS theory are very similar nearby
the gap, but differ at low energies ω ≈ 0 (see section
III A 2). The broadening through an imaginary part of
the superconducting gap26, ∆2 (ΓD = 0), is supported by
the microscopic Eliashberg theory. However, a constant
imaginary part of the energy, ΓD (∆2 = 0), usually fits
better to experiments done with, e.g., Niobium20,25,27.
For all further purposes we will only consider finite ΓD
and ∆2 = 0.
C. Quasiparticle tunneling
The interaction between the qubit and the quasiparti-
cle environments occurs due to the possibility of quasi-
particles to tunnel across the junction(s) and simultane-
ously change the charge configuration in the qubit space.
This is described by the modified tunneling Hamiltonian
HT
HT = ¯HT + EJ cos ϕ,
where the bare tunneling Hamiltonian has the form
¯HT = tXklα
(c†
kαclα T + h.c.).
(9)
(10)
Here the states k and l belong to the opposite sides
of the junction. We assume a constant tunneling ma-
trix element t, related to the normal state tunnel resis-
tance as RT = /t2D2πe2. The charge-transfer opera-
tor T = PN N + 1ihN = eiϕ/2 accounts for the cor-
responding changes in the charge number of the leads.
Cooper-pair tunneling, which is a second-order process in
quasiparticle tunneling, is already included in the qubit
Hamiltonian in an approximative way as the operator
−EJ cos ϕ. Therefore we need to subtract it from ¯HT to
avoid double counting.
The second-order expansion of the qubit's density-
matrix equation of motion in the tunneling Hamiltonian
leads to contributions describing qubit decoherence and
parameter renormalization. Here we discuss in detail the
decoherence terms, i.e., terms leading to energy decay
and pure dephasing. We then estimate their magnitude
for usual single-junction qubits. An exact derivation of
the rates, a formulation for the energy-level renormaliza-
tion effects, and a discussion for the effect of higher-order
terms is given in the Appendix.
The system we consider is a two-level system interact-
ing with a fermionic bath. The coupling to the bath can
be divided into two parts: (i) the part causing transi-
tions, ∝ σx, and (ii) the part causing pure dephasing,
∝ σz. The decay rate, Γ1, is a result of coupling to σx.
This leads also to the ordinary dephasing rate Γ2 = Γ1/2.
Fluctuations through σz lead to the pure dephasing rate
Γ2∗ , which can be interpret to be a result of low-frequency
fluctuations in the qubit energy splitting due to coupling
to the bath1.
A. Tunneling processes
In leading order we obtain two distinct types of tun-
neling processes causing decoherence. The first one is
tunneling of an existing quasiparticle. In the case of the
BCS state this is described by an operator of the type
O1 = ukul T − vkvl T †.
(11)
This process contributes mainly in model I. The second
one is the breaking of a Cooper pair, described by the
BCS operator of the type
O2 = ukvl T + vkul T †.
(12)
This process contributes only in model II.
Impor-
tant here is that the operators Oi are superpositions of
two electron-tunneling directions, T and T †, as long as
u, v 6= 0. As the qubit states are superpositions of differ-
ent charge states, the direction of electron tunneling be-
comes indistinguishable and the two tunneling processes
interfere. This gives rise to a phase dependence in quasi-
particle tunneling, similar to the cos ϕ-term in the classi-
cal Josephson effect28. This interference effect has also an
important role in decoherence of superconducting qubits,
as discussed below.
1. Qubit decay
In the discussed low-energy approximation we obtain
the following common form for the decay rates,
4
For the qubits considered in this work the qubit decay
rate can be written in the form
Γ1 =
2ξiM 2
1
RTe2 (1 + ǫi cos ϕ0) , i = I, II ,
(16)
Γ1 =
2
RTe2 (cid:12)(cid:12)(cid:12)h↑ T ↓i(cid:12)(cid:12)(cid:12)
2Z ∞
−∞
dωZ ∞
−∞
× [n(ω)n(ω′) + p(ω)p(ω′) cos ϕ0] δ(ω − ω′ − δE).
dω′f −(ω)f +(ω′)
2
.
M 2
1 =(cid:12)(cid:12)(cid:12)h↑ T ↓i(cid:12)(cid:12)(cid:12)
(13)
Important here is that the rates are proportional to ξi,
defined for the two cases as
Here δE is the energy-level splitting of the qubit and the
angle ϕ0 is defined as
eiϕ0 = −h↑ T ↓ih↓ T ↑i
(cid:12)(cid:12)(cid:12)h↑ T ↓i(cid:12)(cid:12)(cid:12)
2
.
(14)
The matrix elements depend on the choice of supercon-
ducting qubit, but as we will discuss, they are in fact
very similar for broad classes of qubits.
Expressions such as (13) are often derived in the BCS
excitation picture, where integration over only positive
(excitation) energies emerges.
In this semiconductor-
type presentation negative energies appear as well. But
the result of the two presentations is the same. The pos-
itive integration region of both frequencies ω and ω′ cor-
responds to tunneling of an existing quasiparticle to one
direction, as the negative integration region to the other
region. The contribution with positive ω but negative
ω′ describes breaking of a Cooper pair during the single-
electron tunneling.
It can exist only if there is an ex-
tended states below the gap (because δE < 2∆). The
contribution with positive ω′ but negative ω contributes
only if δE < 0 and would correspond to recombination
of two quasiparticles with excitation of the qubit.
2. Qubit decay in the low-energy approximation
To simplify equation (13) we assume δE ≪ ∆ and
that the width of the quasiparticle distribution (∼ kBT )
is much smaller than the qubit splitting, δE. This means
that for model I the distribution f is nonzero above the
gap (ω ≥ ∆) practically only in a very narrow region
[we have always f (−ω) = 1 − f (ω) = f +(ω)]. On the
other hand, for the model II with Dynes broadening (and
∆2 = 0) one can approximate
n =
p =
,
ΓD
∆
ω
∆
ΓD
∆
.
(15)
For a finite imaginary part ∆2 and ΓD = 0 one would
have n = (ω/∆)(∆2/∆) and p = (ω/∆)2(∆2/∆).
However,
in the following we assume a Dynes-type
broadening20,25,27 when considering model II.
ξI =
nqpn(∆ + δE)
D
,
∆ (cid:19)2
ξII = δE(cid:18) ΓD
.
(17)
The form Γ1 ∝ 1 + ǫi cos ϕ0 for the decay rate (16) is
a result of the interference effect in quasiparticle tunnel-
ing28 (see the discussion in section III A). Its magnitude
and sign are given by
ǫI =
1
1 + δE/∆
,
ǫII = −
1
∆ (cid:19)2
6(cid:18) δE
.
(18)
For model I we have ǫI ≈ 1 whereas for model II ǫII ≈ 0.
Physical interpretation for this is that the subgap states
in model II are close to metallic states and do not show
significant pair correlations (p ≈ 0), needed for the effect.
3. Pure dephasing
In the leading-order expansion of the qubit's time evo-
lution the pure dephasing appears as an extra decay of co-
herent oscillations through transition terms proportional
to h↑ T (†) ↑i or h↓ T (†) ↓i. The pure dephasing rate
is then similar to the rate (13) by setting δE = 0, and
changing the matrix element,
Γ2∗ =
M 2
−∞
−∞
M 2
2
dω′f −(ω)f +(ω′)
dωZ ∞
RTe2 Z ∞
× [n(ω)n(ω′) + p(ω)p(ω′) cos ϕ0∗ ] δ(ω − ω′) ,
2 =(cid:12)(cid:12)(cid:12)h↑ T ↑i − h↓ T ↓i(cid:12)(cid:12)(cid:12)
eiϕ0∗ = −
= −
2
2
.
h↑ T ↑i
(cid:12)(cid:12)(cid:12)h↑ T ↑i(cid:12)(cid:12)(cid:12)
h↓ T ↓i
(cid:12)(cid:12)(cid:12)h↓ T ↓i(cid:12)(cid:12)(cid:12)
2
Here we have assumed that
which is the case for most of the qubits considered in this
paper. The only exception is the flux qubit away from its
symmetry point, discussed more detailed in section IV.
The value of the integration in Eq. (19) depends on
the distribution f , which depends on the model used.
In model II we assume the equilibrium distribution
(19)
, (20)
feq = 1/[1 + exp(ω/kBT )]. Then the pure dephasing
corresponds to fluctuations originating from tunneling of
thermalized (sub-gap) quasiparticles. For this case the
integration can be easily evaluated giving (ΓD/∆)2kBT .
This means that for small temperatures kBT ≪ δE the
pure dephasing rate is much smaller than the decay rate.
In model I the situation is more difficult due to the log-
arithmic divergence of the energy integral at the energy
gap. Similar singularities appear also in other properties
of superconductors29, but stay finite due to finite lifetime
effects or gap anisotropy. It is now crucial, which type of
broadening is assumed. If one introduces a small imag-
inary part ∆2 and accordingly redefines nqp in Eq. (7),
then the integral in Eq. (19) remains small. As a result
of this the pure dephasing rate stays small compared to
the energy decay rate. Other methods for circumventing
the divergence can produce larger results for the inte-
gral. However, as we will discuss in the next section,
pure dephasing is additionally suppressed by small tun-
neling matrix elements.
B. Discussion for single-junction qubits
We will now discuss the qubit part of the decoher-
ence rates in the case of single-junction qubits. Specifi-
cally we consider the phase qubit, the transmon, the dc-
flux qubit, the strongly anharmonic phase qubit30 and
the fluxonium. Strictly speaking the fluxonium is not
a single junction qubit, but we consider the integrated
Josephson junction array simply as an inductance. For
a detailed discussion of the Fluxonium including quasi-
particle tunneling in the junction array see Ref. 12. The
discussion can be structured along two major properties.
One is the squared magnitude of the qubit matrix el-
ement in Eq. (16) or of the difference between matrix
elements in Eq. (19), divided by the tunneling resistance
RT. The second is the phase difference ϕ0 in the inter-
ference (cos ϕ0) term.
When it comes to estimating the matrix elements
qubits fall broadly in two classes. One class of qubits
have eigenstates located in a single local minimum of the
qubit's potential energy,
U =
EL
2
(ϕ − ϕext)2 − EJ cos ϕ .
(21)
The lowest eigenstates are then similar to that of a har-
monic oscillator and they are symmetric or antisymmet-
ric around the local minimum. Here the decay and de-
phasing elements are in a good approximation given by
M 2
1 =
EC
δE
,
M 2
δE(cid:19)2
2 =(cid:18) EC
.
(22)
In this class we have clearly the transmon and the phase
qubit. A qubit with a quartic potential as proposed in
5
Ref. 30 (strongly anharmonic phase qubit) has the same
matrix element and despite its rather unusual potential,
the fluxonium belongs to this group as well for ϕext = 0.
The qubit that bucks the trend is the dc-flux qubit, which
in fact is very similar to the fluxonium for ϕext = π. With
its double well potential it is very different from all the
other qubits. We will discuss the form of the matrix ele-
ments in detail in the next section, but at the symmetry
point they can be shown to have the approximative form
M 2
M 2
1 = sin2(cid:16) ϕmin
2 (cid:17) ,
2 = e−2ω′ϕ2
min,
(23)
where ϕmin is the solution to the transcended equation
and
ELϕmin − EJ sin ϕmin = 0 ,
ω′ =s EL − EJ cos(ϕmin)
2EC
.
(24)
(25)
The decay matrix element is the largest of the discussed
qubits. Important is also that this qubit has relatively
low tunneling resistance RT. Depending on the interfence
effect it can be rather sensitive to quasiparticle tunneling.
The qubits have various interference angles, as defined
in Eq. (14). For the qubits that are similar to a har-
monic oscillator this angle is given by the position of the
local minimum. The potentials of the transmon and flux-
onium qubits are symmetric around the phase ϕ0 = 0,
whereas the potential of the phase qubit is also practi-
cally symmetric, for certain ϕ0 6= 0. In the dc-flux qubit
(with ϕext = π) the interference angle is given by ϕ0 = π,
and the situation is the same for the stronlgy anharmonic
phase qubit. This provides protection against qubit de-
cay due to non-equilibrium quasiparticles, as then the
interference between two electron tunneling directions is
destructive. However, this protection is only partial be-
cause for typical qubit splittings δE ≈ ∆/10 one has
ǫI ≈ 0.9 (< 1).
The common decay rate (16) shows that the two quasi-
particle sources produce a similar type of decay rate. It
is now easy to estimate which source should be domi-
nant in typical experimental conditions. A crucial quan-
tity is the dimensionless parameter ξi/∆, defined in
Eq. (17). The division by the energy gap also accounts
for changes in Eq. (16) due to change in the tunneling
resistance, if the same qubit (with same EJ) is build
from, for example, Niobium instead of Aluminum, as
one has RT ∝ ∆. For an Aluminum superconductor
the parameter is usually measured to have a value in
the range ξI /∆ ∼ 10−8 − 10−5 (non-equilibrium quasi-
particles) or ξII /∆ ∼ 10−15 − 10−9 (sub-gap density of
states). This means that for Aluminum non-equilibrium
quasiparticles have usually an impact that is several or-
ders of magnitudes larger than that of sup-gap states.
On the other hand, for Niobium using the typically ob-
served Dynes parameter20,27 we obtain values ξII /∆ ∼
a)
b)
c)
JS
3
2
y
1
J
J
4
J4
x
2a
2b
FIG. 1. (a) The original persistent-current flux qubit as pro-
posed in Ref. 31. The p-flux qubit has three junctions, two
large junctions with Josephson energy EJ and phase differ-
ences ϕ1 and ϕ3. The smaller junctions has the Josephson
energy EJS and the phase difference ϕ2. Through the loop
a flux ϕy is applied.
(b) For technical reasons many flux
qubits actually have four junctions. The fourth junction has
the Josephson energy EJ4 and the phase difference ϕ4. (c)
To allow for more tunability often the smaller junction is re-
place by a SQUID loop consisting of two junctions with phase
differences ϕ2a, and ϕ2b
10−6 − 10−5, corresponding to the upper bound values
for non-equilibrium quasiparticles in Aluminum.
In table I we compare decay times for various qubits
calculated by assuming the lowest reported value for the
density of non-equilibrium quasiparticles in Aluminum,
given in Ref. 10. For single-junction qubits (transmon
and phase) we find decay times of the order of ms, which
is two to three orders of magnitude higher than the best
experimental observations. For the same qubits but build
from Niobium the decay rate, Eq. (16), simplifies to
Γ1 ≈
1
CRT(∆/ΓD)2 ,
(26)
being consistent with the result of the classical limit. In
this case we find decay times of the order of 10 µs.
The single-junction qubit that is the most sensitive to
both quasiparticle sources is the dc-flux qubit, for which
we obtain decay times of order 100 µs (Al) and 100 ns
(Nb) (not listed in table I). The value for Aluminum
includes the protection due to destructive interference
which is approximately a factor of 10. All together,
in these conditions the Aluminum based single-junction
qubits are protected against non-equilibrium quasiparti-
cles, most of them due to small EC/EJ-ratio.
IV. MULTI-JUNCTION FLUX QUBITS
In this section we generalize our analysis to multi-
junction qubits. We consider in detail the most common
of them, the flux qubit, which comes in many different
shapes and forms. The original proposal, Fig. 1(a), is a
qubit with three junctions31, but in general it is today
used in many variations often with several extra junc-
tions. For technical reasons the flux qubits have always
been build with a fourth junction, Fig. 1(b), which in
most modern flux qubits is of the same size as the two
6
large junctions. In another version of the flux qubit, the
small junction has been replaced with a SQUID, meaning
by a loop with two junctions, Fig. 1(c). This allows for
more tunability.
We will start this section with a discussion of the gen-
eralization of the decoherence rates to many junctions.
Then we will continue with calculating the rates for the
p-flux qubit with three junctions and then later discuss
the modification by the fourth junction and the tunable
third junction. We end the section with the capacitively
shunted flux qubit, which by its properties is shown to
be similar to an anharmonic oscillator.
A. Generalization of the decoherence rates
As before we define our total Hamiltonian of the qubit
and the quasiparticle environment as
H = Hqubit + Hqp + HT,
(27)
where Hqubit is the Hamiltonian of the flux qubit, cou-
pled via the tunneling Hamiltonian HT to a quasipar-
ticle environment Hqp. With a total of n junctions we
j=1 EJj cos ϕj, where the bare tunnel
Hamiltonian is
have HT = ¯HT +Pn
Xj=1
¯HT =
n
(c†
jkαcjlα Tj + h.c.).
tjXklα
(28)
jk and c(†)
Here c(†)
jl are electron annihilation (creation) op-
erator of the states k and l on the two sides of the junction
j with Josephson coupling EJj , and Tj is the correspond-
ing qubit-space charge-transfer operator, given in differ-
ent cases below. The quasiparticle environments in each
of the leads are assumed to be identical and described by
relations (3-8).
In the leading order the decay rates can be written into
a similar form as for the single-junction case, Eq. (13),
and in the low-energy approximation (section III A 2) one
gets
Γtotal
1
=
Γ1j =
n
Γ1j,
Xj=1
2ξiM 2
1j
RTje2 (1 + ǫi cos ϕ0j) ,
(29)
2
.
M 2
1j =(cid:12)(cid:12)(cid:12)h↑ Tj ↓i(cid:12)(cid:12)(cid:12)
Here RTj and ϕ0j stand for the tunneling resistance and
the interference angle of the junction j. Similar general-
ization applies also for the pure dephasing rate, Eq. (19).
In the following we discuss the form of the matrix el-
ements M 2
ij and the phases ϕ0j in the considered flux
qubit realizations.
B. The persistent-current flux qubit
where we defined
The first persistent-current flux qubit we consider has
three Josephson junctions, see Fig. 1(a). Its Hamiltonian
can be presented in the form
Hqubit = EC(cid:18)
1
1 + 2αs
N 2
+ + N 2
−(cid:19)
− EJ [2 cos(ϕ+) cos(ϕ−) + α cos(2ϕ+ − ϕext)] .
(30)
Here EC is the total charging energy of the system,
EJ is the Josephson energy of the larger junctions and
α = EJS/EJ is a parameter that determines the energy
splitting of the qubit. In the following it is assumed that
for the corresponding capacitive term it holds αs = α.
The ratio of Josephson and charging energy for the p-
flux qubit is generally given by EJ /EC ≈ 50. We have
three junctions with phase differences ϕ1, ϕ2 and ϕ3, as
illustrated in Fig. 1(a). The phases in the Hamiltonian
are then defined by
ϕ± =
1
2
(ϕ1 ± ϕ3) , ϕext = ϕy .
(31)
For each dynamical phase we have a conjugate charge
variable, [ϕ±, N±/2] = i, and for each junction we have
a tunneling operator given by
T1 = ei(ϕ++ϕ−)/2 , T2 = ei(ϕext−2ϕ+)/2,
T3 = ei(ϕ+−ϕ−)/2 .
(32)
ω′ =r(4α2 + 1)
EJ
2EC
.
The state in the right well, Ri, has the same form, just
centered at ϕ+,min. Under the same approximation we
used to derive the potential given by Eq. (34) we can
now find the coupling strength t between the two states,
which is given by
t
2
= hRHqubitLi
(38)
≈
[−2 − 3α + 2α2 − 2ϕ2
1 + 2α
× exp(−ω′ϕ2
+,min).
+,min(4α2 + 1)]EJ
Here we assumed ϕext = π and consider the contribution
of the order of EJ. There is an additional contribution of
the order of √EJEC and EC , but they remain small. Of-
ten the coupling strength has been calculated using the
WKB approximation. Our calculations underestimates
the coupling strength but still gives a good order of mag-
nitude approximation.
and in the lowest order of δϕext we get
We move away from symmetry like ϕext = π − δϕext
Hqubit ≈ Hqubit(ϕext = π)+EJ(cid:18)−2αϕ+ +
3 (cid:19) δϕext.
(39)
If we now compare the energy of the minima with the
energy of the minima for δϕext = 0 we find the energy
difference
4αϕ3
+
12α√6√2α − 1
(8α − 1)3/2
7
(37)
(41)
(42)
(43)
(44)
(45)
1. Eigenstates
δǫ = EJ
δϕext.
(40)
The potential of the p-flux qubit is given by
U (ϕ−, ϕ+)/EJ = −2 cos(ϕ+) cos(ϕ−)
− α cos(2ϕ+ − ϕext).
(33)
In the direction of ϕ− the system behaves similar to a
harmonic oscillator that remains in the ground state.
Therefore we will focus on the dynamics in the ϕ+ di-
rection. Choosing ϕext = π (the symmetry point) and
ϕ− = 0 we expand U for small ϕ+,
U/EJ ≈ (1 − 2α)ϕ2
+ +(cid:20) 2α
3 −
1
12(cid:21) ϕ4
+.
(34)
We have α & 1/2. This means that the eigenstates of
the qubit are formed by symmetric and antisymmetric
superpositions of the ground state of two wells. These
ground states are centered around the minima ±ϕ+,min,
Now we can write the Hamiltonian in the standard way
of a two-state approximation for the states Li and Ri,
Hqubit ≈
t
1
2 δǫ
t −δǫ! .
The basic form of the states is therefore given by
↑i = cos(cid:18) θ
↓i = − sin(cid:18) θ
2(cid:19)Li + sin(cid:18) θ
2(cid:19)Li + cos(cid:18) θ
2(cid:19)Ri,
2(cid:19)Ri,
with tan θ = t/δǫ.
Let us now consider an operator of the form
T = eiϕ+/2.
We get in a good approximation
ϕ+,min =
√6√2α − 1
√8α − 1
.
(35)
hL TLi = e−iϕ+,min/2 , hR TRi = eiϕ+,min/2,
and
In the left well the eigenstate is of the form
hϕ+Li =(cid:18) ω′
π (cid:19)1/4
exp(cid:2)−ω′(ϕ+ + ϕ+,min)2/2(cid:3) ,
hL TRi = hR TLi = e−ω′ϕ2
+,min.
(36)
Using these equations we will be able to calculate the
effect of quasiparticle tunneling on the flux qubits.
2. Qubit decay
3. Dephasing
8
The dephasing is characterized by the diagonal matrix
elements of Tj, which can be shown to have the form
To estimate the qubit decay rate we start from the
transition element of the operator T = eiϕ+/2. This can
be expressed in the form
h↓ T ↑i = i sin θ sin(cid:16) ϕ+,min
2
(cid:17) + cos θe−ω′ϕ2
+,min.(46)
From this general form we can deduce the results for the
tunneling operators T1 and T3,
2
+ sin θe−ω′ϕ2
h↑ T1 ↑i = h↑ T3 ↑i = −i cos θ sin(cid:16) ϕ+,min
+,min + cos(cid:16) ϕ+,min
(cid:17) .
h↓ T1 ↓i = h↓ T3 ↓i = +i cos θ sin(cid:16) ϕ+,min
+,min + cos(cid:16) ϕ+,min
(cid:17) .
− sin θe−ω′ϕ2
2
(cid:17)
(cid:17)
(49)
(50)
2
2
The second junction has again an extra phase depen-
dence,
h↓ T1 ↑i = h↓ T3 ↑i = i sin θ sin(cid:16) ϕ+,min
2
+ cos θe−ω′ϕ2
+,min,
(cid:17)
(47)
hl T2 li = eiϕext/2×
h±i cos θ sin (ϕ+,min) ± sin θe−ω′ϕ2
+,min + cos (ϕ+,min)i .
(51)
where we have used the fact that the system stays in the
ground state in the direction ϕ−. Important here is that
for the symmetry point one has θ = π/2 and the matrix
elements (47) are purely imaginary. This is in contrast
to the (single-junction) dc-flux qubit where the element
is real. It follows that the interference angles in Eq. (29)
are ϕ01 = ϕ03 = 0, i.e., one has constructive interference
instead of destructive.
The junction that is somewhat different is the second
junction, for which the matrix element is given by
h↓ T2 ↑i =h−i sin θ sin ϕ+,min + cos θe−ω′ϕ2
(48)
The element (48) has an additional phase factor, eiϕext/2,
and becomes real at the symmetry point ϕext = π. This
corresponds to the case of the dc-flux qubit and destruc-
tive interference.
+,mini eiϕext/2.
The interference effect has an important role in de-
termining the sensibility to non-equilibrium quasiparticle
tunneling. As discussed in section III B, the decay matrix
element of this qubit type is the largest, but the single
junction dc-flux qubit is protected by destructive interfer-
ence. As a result of constructive interference for two junc-
tions of the p-flux qubit, this protection is lost. It follows
that even with the smallest observed non-equilibrium
quasiparticle density10, corresponding to ξI /∆ ∼ 10−8,
we obtain a decay time of the order 10 µs. This result
coincides with recent experiments5.
The presence of a term that does not change sign when
changing the state leads effectively to a different angle
ϕ0∗ for the two states ↑i and ↓i, and deviations from
result (19). However, near the symmetry point such cor-
rections stay small and one can neglect this effect. In this
region the main contribution to pure dephasing comes
from the junction 2. Using Eq. (51) one obtains then for
the relevant dephasing matrix element
h↑ T2 ↑i − h↓ T2 ↓i2 = e−2ω′ϕ2
+,min.
(52)
This is usually much smaller than the decay element.
Combined with the discussion of section III B, this means
that at the symmetry point the dephasing is limited only
by the qubit decay.
C. The four-junction flux Qubit
For technical reasons the p-flux qubit is in fact always
build with four junctions instead of the necessary three.
The fourth junction has a charging energy EC4 and a
Josephson energy EJ4. We can assume EJ4 ≫ EC4. The
additional junction adds another dimension to the prob-
lem, and we can approximate states along this dimension
as states of a harmonic oscillator. Within this approxi-
mation the total Hamiltonian can be written as
Hqubit =
1
2
δEτz + g (m1τx + m2τz) (a† + a)
(53)
+ ωa†a,
Results for Niobium p-flux qubits is similar to dc-flux
qubits: using typical subgap densities20 one obtains de-
cay times of the order 100 ns, being also similar to recent
experiments32. These results are compared with the ones
of other qubit types in table I.
where τi are the Pauli matrices acting on the eigenstates
of the p-flux qubit (42), with the energy splitting δE =
√δǫ2 + t2. These states are coupled with the coupling
strength g = EJ α(2EC4/EJ4)1/4 to the fourth junction,
modeled as a harmonic oscillator with frequency ω =
√8EC4EJ4. The coupling is determined by the following
matrix elements,
m1 = h↑ sin (2ϕ+ − ϕext) ↓i,
2m2 = h↑ sin (2ϕ+ − ϕext) ↑i − h↓ sin (2ϕ+ − ϕext) ↓i .
(54)
If the fourth junction is large, EJ4 → ∞, the coupling
goes to zero. In this case the fourth junction is decoupled
and always stays in the ground state. However, in many
flux qubits the fourth junction has the Josephson energy
EJ4 ≈ EJ. In this case the coupling is strong, g ≈ ω.
The tunneling operator for the fourth junction is sim-
ply given by T4 = eiϕ4/2. Close to the symmetry point
we have m2 ≈ 0 and additionally we assume ω ≫ δE. In
this case we can approximate the matrix element in the
lowest order of (2EC4/EJ4)1/4 by
gm1
pω2 + 4g2m2
1
,
(55)
hgT4ei = −i(cid:18) 2EC4
EJ4 (cid:19)1/4
where we have labeled the two lowest eigenstates of the
four-junction flux qubit as gi and ei.
In the limit of
weak coupling EJ4 ≫ EJ, we find ω ≫ gm1. Then the
matrix element simplifies to hgT4ei = −iαEJm1/8EJ4.
In general we have EC4/EJ4 ≪ 1 and therefore transi-
tions due to tunneling across the fourth junction are well
suppressed compared to tunneling across the other junc-
tions. Similarly we can calculate the tunneling through
the third junction with the tunneling operator T3 =
ei(φ+−φ−)/2 and, using the same approximation as for
Eq. (55), we get
hgT3ei ≈ h↓ T3 ↑i .
(56)
In conclusion we can say that the fourth junction should
have little effect on the overall decoherence rate of the
p-flux qubit.
9
it is straightforward to calculate the tunneling matrix
elements. The decay rates for quasiparticle tunneling
through the large junctions are the same as for the stan-
dard persistent-current flux qubit and we therefore get
the similar overall rates. The only difference is that
the tunneling across the small junctions, that form the
SQUID, have now different type of interference effect if
ϕx 6= 0.
E. Capacitively shunted Flux qubit
Another version of the same qubit, the capacitively-
shunted flux qubit22 has the same Hamiltonian as the
persistent-current flux qubit (30). The major difference
is that it is operated in the regime α ≤ 1/2 and the
charging energy along the dimension of the double well
potential is significantly reduced by introducing a shunt
capacitance, αs ≫ α. This qubit has excellent coherence
times and still preserves relatively large anharmonicity.
We will discuss the system at the symmetry point ϕext =
π and for the case where it deviates most strongly from
a harmonic oscillator, α = 1/2. After this we are able to
generalize this result to other parameter regimes.
Under the conditions we specified above we can write
the Hamiltonian as
Hqubit(ϕext = π, α = 1/2) ≈ E′
C N 2
+ +
1
3
EJϕ4
+,
(59)
with E′
C = EC /(1 + 2α + Cs/CJ ). We note that the
Hamiltonian is similar to the one of the strongly anhar-
monic phase qubit30. We find the eigenstates to be
hϕ+ ↓i =(cid:18) ω′
hϕ+ ↑i =(cid:18) ω′
e−ω′ϕ2
+ ,
π (cid:19)1/4
π (cid:19)1/4 √2ω′ ϕ+ e−ω′ϕ2
+/2,
(60)
(61)
D. Tunable gap flux qubit
with ω′ = (3EJ/16E′
the matrix elements for the tunneling operators (32),
C)1/4. It is now simple to calculate
In the tunable gap flux qubit the small junction is re-
placed by a SQUID, see Fig. 1(c). In this case the pa-
rameter α can be tuned by changing the field ϕx.
In
Hamiltonian (30) this changes
α = α0 cos(cid:16) ϕx
2 (cid:17) ,
ϕext = ϕy +
ϕx
2
.
(57)
The four tunneling operators are given by
T1 = ei(ϕ++ϕ−)/2 ,
T2b = ei(ϕext−ϕx/2−2ϕ+)/2 , T3 = ei(ϕ+−ϕ−)/2,
T2a = ei(ϕext+ϕx/2−2ϕ+)/2,
(58)
where Ti corresponds to the junction with phase ϕi.
Since the eigenstates are the same as for the p-flux qubit,
h↓ T1 ↑i = h↓ T3 ↑i ≈
i
C
2(cid:18) 2E′
3EJ(cid:19)1/6
,
(62)
matrix element as h↓ T1 ↑i = pE′
and for T2 one obtains again the additional phase fac-
tor eiϕext/2 = i. The energy splitting between the
eigenstates is given in a good approximation by δE =
2EJ )1/3. Using this result we can rewrite the
2(12E′
C
C /δE. This is a well
known result for a harmonic oscillator and is therefore
also valid for the complete relevant parameter regime of
the capacitively shunted flux qubit. The interference an-
gles ϕ0j of the three junctions are the same as for the
p-flux qubit at the symmetry point: In the case of non-
equilibrium quasiparticles and qubit decay the junctions
1 and 3 have constructive (ϕ01 = ϕ03 = 0) and the junc-
tion 2 has destructive interference (ϕ02 = π). Vice versa
for the dephasing.
As mentioned, the c-flux qubit is very similar to the
strongly anharmonic phase qubit, with the difference that
the latter qubit has only a single junction, which corre-
sponds to the second junction of the c-flux qubit. As this
junction shows destructive interference against qubit de-
cay due to non-equilibrium quasiparticles, the strongly
anharmonic phase qubit is better protected against this
decoherence source. However, the matrix elements of the
qubits are generally similar to that of harmonic oscilla-
tors, and this means that the c-flux qubit is relatively
well protected against quasiparticle tunneling, too.
In
table I we compare the qubit decay times between the
capacitively shunted flux and the other discussed qubits.
V. CONCLUSION
In this work we analyzed decoherence in supercon-
ducting qubits due to quasiparticle tunneling. We con-
sidered two types of sources of quasiparticle tunneling
relevant for low temperatures and low qubit energies:
non-equilibrium quasiparticles and sub-gap density of
states. Using typically observed values for their densi-
ties we estimated the resulting qubit decay times and
compared them with the experimentally measured ones.
In the best case scenario, i.e., with the lowest reported
quasiparticle densities, we showed that only the decay
times of persistent-current flux qubits were similar to re-
cent experiments. The multi-junction flux qubits have
achieved recently excellent coherence times and have
the remarkable feature of extremely large anharmonicity
which makes it the best approximation to a real two level
system of all superconducting qubits. However, the pre-
sented analysis shows that such qubits are also very frag-
ile against quasiparticle tunneling induced decoherence.
To protect the qubits against creation of non-equilibrium
quasiparticles, for example, a careful isolation from the
nearby environments should be realized10,13.
ACKNOWLEDGMENTS
We thank A. Heimes, W. D. Oliver, P. Kotetes,
G. Schon, J. Liesenfeld and G. Johansson for useful dis-
cussions. This work was supported by the CFN of DFG
and the U.S. ARO under Contract No. W911NF-09-1-
0336.
10
where the superconductor quasiparticle density of states
at a given energy cannot be mapped back into certain
quasiparticle energy in the normal state, for example,
due to energy-level broadening effects.
We consider a single Josephson junction qubit and
write the time evolution of the reduced density matrix,
when interacting with quasiparticle environment, gener-
ally as
ρmn(t) = i(En − Em)
ρmn
+Xab Z t
t0
dt′σa→m
b→n (t − t′)ρab(t′).
(63)
Here the (generalized transition rate) tensor σa→m
b→n in-
cludes the effect of qubit-quasiparticle interaction.
Its
calculation is similar to the case of metallic reservoirs33
with a difference that when tracing out the environment
also two annihilation (creation) operators c(†)
can also
k
contract to pairs. Their contribution leads to the pair
density p, whereas diagonal contributions, such as c†
kck,
lead to the density of states n.
In the leading order we obtain for the transition from
σi→f
the state ii to fi
s→0Z t
i→f = 2Re(cid:26)lim
¯σ(t − t′) =(cid:10)hi ¯HT(t)fi(cid:10) f ¯HT(t′)iii
−∞
dt′e−(t−t′)s ¯σ(t − t′)(cid:27) ,
The trace over the initial distribution of quasiparticles
leads to four nonvanishing contributions
(64)
¯σ(t) =
t2
2 eiδωt(a + b + c + d),
(65)
where δω = δE/ and
G>
αα(k, t − t′)G<
G<
αα(k, t′ − t)G>
αα(l, t′ − t),
αα(l, t − t′),
a = hf Tii2Xklα
b = hf T †ii2Xklα
c = −hi Tfihf TiiXklαβ
d = −hi T †fihf T †iiXklαβ
F >
αβ(k, t − t′)F <
αβ(l, t′ − t),
F <
αβ (k, t′ − t)F >
αβ (l, t − t′).
(66)
APPENDIX
The correlation functions G and F are defined in Eq. (3).
We define their Fourier transforms as
A. Derivation of the decoherence rates
G≶(k, t) =
1
2π Z ∞
−∞
dωe−iωtG≶(k, ω).
(67)
Here we formulate the qubit decay rate as a function of
electron correlation (Green's) functions of the leads. Our
aim is to consider the response of the superconductor as
a sum over all energy states, rather than consider the
response of single states. By this we can model situations
The Fourier tranforms are related to the spectral densi-
ties as in Eq. (4). In our analysis we have omitted the
overall phase appearing usually in F -functions, as it is
treated in the qubit part. In compared to Refs. 24 and
34 our definition of F > corresponds to F > (and F < to
F <).
Provided by the assumption of constant tunneling am-
plitude t we can now write the contributions to the tran-
sition rate coming from the different terms as
11
D2t2
2 hf Tii2 lim
s→0
a →
Re(cid:26)eiδωt′Z t
−∞
dt′e−(t−t′)sZ ∞
−∞
dωZ ∞
−∞
dω′n(ω)n(ω′)f +(ω)f −(ω′)ei(ω′−ω)t′(cid:27) .
(68)
iP (1/(ω)), one obtains
We have defined the normalized density of states n as in Eq. (5). Using the relation lims→0R 0
dω′f +(ω)f −(ω′)n(ω)n(ω′)δ(ω − ω′ − δω).
a → D2πt2hf Tii2Z ∞
−∞
dωZ ∞
−∞
−∞ eiωt+st = πδ(ω) −
(69)
Note the symmetry of the equation around ω = 0: contri-
bution of negative energies (ω, ω′ < 0) gives similar con-
tribution as positive energies (ω, ω′ > 0). As all processes
described by a correspond to given electron tunneling di-
rection, negative energies correspond to opposite tunnel-
ing direction of the quasiparticle. The contribution from
b follows the same calculation and is similar to a, with
a difference that the qubit matrix element is changed to
hf T †ii2. It corresponds to tunneling of an electron to
the opposite direction.
The contribution from c and d exists only if a factor
hi Tfihf Tii = hi T †fi(hf T †ii)∗ is finite.
It means
that it exists if two electron tunneling directions can lead
to the same final state, in a single quasiparticle tunneling
process. Then the processes interfere. The contribution
from c is similar as before, but replaces n functions by p
functions,
c → −
D2πt2
2
hf Tii2Re(cid:26)eiϕ0Z ∞
−∞
dωZ ∞
−∞
dω′f +(ω)f −(ω′)p(ω)p(ω′)(cid:20)δ(ω − ω′ − ωf i) − i
P
ω − ω′ − ωf i(cid:21)(cid:27) ,
(70)
where we have used the fact that for the considered qubits
hf Tii = hf T †ii and then defined hi Tfihf Tii =
−eiϕ0hf Tii2. Noticing, that the contribution from d
is equal to contribution from c, except with an opposite
phase factor e−iϕ0, one obtains that the principal value
part gives no contribution. Therefore one gets
c + d →
2D2πt2
2
hf Tii2 cos ϕ0Z ∞
−∞
dωZ ∞
−∞
dω′f +(ω)f −(ω′)p(ω)p(ω′)δ(ω − ω′ − ωf i).
(71)
We can write now
a + b + c + d →
2πt2
2 hf Tii2Z ∞
−∞
dωZ ∞
−∞
dω′f +(ω)f −(ω′) [n(ω)n(ω) + cos ϕ0p(ω)p(ω′)] δ(ω − ω′ − ωf i),
(72)
leading to equation (13). This expression is similar to
equation (9) in Ref. 34, giving also insight to the inter-
pretation of the different terms. The main term that
is missing, when compared to Ref. 34, is the coherent
Josephson term (sin ϕ-term), as it does not contribute
in the process considered here.
(This term is treated
exactly in the qubit Hamiltonian). Such coherent terms
would contribute through the principal value integration.
The dissipative terms are similar. Especially, the famous
cos ϕ-term corresponds to interference between electron
and hole-like tunneling in our calculation, described by
terms c and d. A new type of measurement of this term
with a superconducting charge qubit has been considered
in Ref. 28.
B. Coherent terms: Parameter renormalization
Taking into account the tunneling Hamiltonian HT by
perturbation theory includes not only incoherent pro-
cesses but also coherent terms leading to renormaliza-
tion of the qubit parameters. Their contribution is usu-
ally small but can depend, for example, on the non-
equilibrium quasiparticle density. This has been studied
in detail in Ref. 12.
The Josephson coupling EJ in Eq. (2) is calculated as
the expectation value over the quasiparticle distribution
of the operator
EJ
2
−
=(cid:28)hN + 2 ¯HT
1
Hqp
¯HTNi(cid:29) .
(73)
Here the quasiparticle (BCS) Hamiltonian has no depen-
dence on the charge number N . Using fermi distribu-
tions for the excitation occupation probabilities one ob-
tains the famous Ambegaokar-Baratoff relation for EJ.
This corresponds to the usual choice of the Josephson
coupling. In addition, there exists a similar second-order
contribution describing reactive behaviour of quasiparti-
cles (usually referred to as the capacitance renomaliza-
tion)
HC′ =XN
NihN ¯HT
1
Hqp
¯HTNihN.
(74)
To calculate this one can introduce a cut-off function
D(E) = 1/[1 + (E/Eco)2], where Eco is larger than any
of the relevant energy scales in the system introduced to
avoid divergence of the energy corrections. At this point
this term produces a constant energy shift for all N and
therefore does not bring anything new on the system.
Insted of
including these terms
into the time-
dependent problem, it is easier to estimate their effect by
considering energy-level changes using time-independent
perturbation theory. Using the second-order theory
again, but now for the modified tunneling Hamiltonian
HT, one obtains a correction to the energy of the state i
δH J
ii = EJhi cos ϕii
+(cid:28)hi ¯HT(cid:20)
1
Ei − Hqp − Hqubit(cid:21) ¯HTii(cid:29) ,
(75)
12
where Ei is the energy of the qubit states ii. At this
point we see that, for example, the Ambegaokar-Baratoff
result is a good approximation as long as the approxima-
tive Josephson term EJ cos ϕ and the corresponding term
coming from the second term on the right-hand side of
Eq. (75) almost cancel each other. It occurs if the tran-
sition probabilities to virtual states vi (v 6= i) are small,
or if the energies of the virtual states stay small Ev ≪ ∆.
In the opposite case extra anharmonicity (non-constant
energy-level spacing) could emerge due to this correction,
as the effective tunneling coupling can become different
for different states.
C. Decoherence due to higher-order effects:
Andreev tunneling
The decoherence processes I and II correspond to
leading order (incoherent) tunneling effects in the system.
The most important process in higher orders is usually
the Andreev tunneling. This involves, for example, tun-
neling of two electrons from one side, with leaving two
excitation behind, to form a Cooper pair on the other
side. Such processes dominate the sub-gap conductance
of normal metal-insulator-superconductor junctions for
ideal BCS state on the superconductor side. However,
for the case of perfect SIS junctions no such process exist
until the energy 2∆ is somehow provided for creation of
two excitations. The process appears as a step-like be-
haviour in the current-voltage characteristics of single JJs
nearby eV = ∆. In experiments the height of the step
is usually considerably higher than obtained by theory.
The reasons for this are still unclear35.
For the case of superconducting qubits no energy is
available to create two excitations, unless sub-gap den-
sity exists at one side of the junction. Through creation
of excitations into subgap region with creating a Cooper-
pair on the other side of the junction one obtains a pos-
sible contribution to the decoherence. However, a simple
analysis indicates that the rates for such processes are
proportional to (Γ/∆)2/N , where N ≫ 1 is the effective
number of parallel tunneling channels.
It results that
contribution from this process should be much smaller
than of the process II considered in this paper. We con-
clude that the contribution from higher-order tunneling
effects to decoherence in superconducting qubits should
stay small.
1 Y. Makhlin, G. Schon and A. Shnirman, Rev.Mod. Phys.
73, 357 (2001)
2 J. Koch, T. M. Yu, J. Gambetta, A. A. Houck, D. I. Schus-
ter, J. Majer, A. Blais, M. H. Devoret, S. M. Girvin and
R. J. Schoelkopf, Phys. Rev. A 76, 042319 (2007).
3 V. E. Manucharyan, J. Koch, L. I. Glazman and M. H.
Devoret, Science 326, 113 (2009).
4 H. Paik, D. I. Schuster, L. S. Bishop, G. Kirchmair, G.
Catelani, A. P. Sears, B. R. Johnson, M. J. Reagor, L.
Frunzio, L. Glazman and R. J. Schoelkopf, arxiv/1105.4652
5 J. Bylander, S. Gustavsson, F. Yan, F. Yoshihara, K.
Harrabi, G. Fitch, D. G. Cory, Y. Nakamura, J.-S. Tsai
and W. D. Oliver Nat. Phys. 7, 565 (2011).
6 J. M. Martinis, M. Ansmann and J. Aumentado, Phys.
Rev. Lett. 103, 097002 (2009).
7 A. Palacios-Laloy, F. Mallet, F. Nguyen, F. Ong, P. Bertet,
D. Vion and D. Esteve, Phys. Scr. T137, 014015 (2009).
8 B. S. Palmer, C. A. Sanchez, A. Naik, M. A. Manheimer,
J. F. Schneiderman, P. M. Echternach, and F. C. Well-
stood, Phys. Rev. B 76, 054501 (2007).
13
9 M. D. Shaw, R. M. Lutchyn, P. Delsing, and P. M. Echter-
nach, Phys. Rev. B 78, 024503 (2008).
10 O.-P. Saira, A. Kemppinen, V. F. Maisi, and J. P. Pekola,
arXiv:1106.1326.
11 G. Catelani, J. Koch, L. Frunzio, R. J. Schoelkopf, M. H.
Devoret and L. I. Glazman, Phys. Rev. Lett. 106, 077002
(2011).
12 G. Catelani, R. J. Schoelkopf, M. H. Devoret and L. I.
Glazman, arXiv:1106.0829.
13 R. Barends, J. Wenner, M. Lenander, Y. Chen, R. C. Bial-
czak, J. Kelly, E. Lucero, P. O'Malley, M. Mariantoni,
D. Sank, H. Wang, T. C. White, Y. Yin, J. Zhao, A.
N. Cleland, J. M. Martinis and J. J. A. Baselmans,
arXiv:1105.4642
14 G. Catelani, L. I. Glazman and K. E. Nagaev, Phys. Rev.
B 82, 134502 (2010)
15 M. Lenander, H. Wang, Radoslaw C. Bialczak, Erik
Lucero, Matteo Mariantoni, M. Neeley, A. D. O'Connell,
D. Sank, M. Weides, J. Wenner, T. Yamamoto, Y. Yin, J.
Zhao, A. N. Cleland and J. M. Martinis, Phys. Rev. B 84,
024501 (2011).
16 C. S. Owen and D. J. Scalapino, Phys. Rev. Lett. 28, 1559
(1972).
skinen, and G. S. Paraoanu, Phys. Rev. B76, 172505
(2007).
21 J. Majer, J. M. Chow, J. M. Gambetta, J. Koch,
B. R. Johnson, J. A. Schreier, L. Frunzio, D. I. Schus-
ter, A. A. Houck, A. Wallraff, A. Blais, M. H. Devoret,
S. M. Girvin, and R. J. Schoelkopf, Nature 449, 443
(2007).
22 M. Steffen, S. Kumar, D. P. DiVincenzo, J. R. Rozen, G.
A. Keefe, M. B. Rothwell and M. B. Ketchen, Phys. Rev.
Lett. 105, 100502 (2010).
23 I. Chiorescu, Y. Nakamura, C. J. P. M. Harmans, and
J. E. Mooij, Science 299, 1869 (2003).
24 A. Barone and G. Paterna, Physics and Applications of the
Josephson Effect (Wiley, New York, 1982).
25 R. C. Dynes, J. P. Garno, G. B. Hertel, and T. P. Orlando,
Phys. Rev. Lett. 53, 2437 (1984).
26 B. Mitrovic and L. A. Rozema, J. Phys.:Cond. Matt. 20,
015215 (2008).
27 Yu. A. Pashkin, H. Im, J. Leppakangas, T. F. Li,
O. Astafiev, A. A. Abdumalikov Jr., E. Thuneberg, and
J. S. Tsai, Phys. Rev. B83, 020502(R) (2011).
28 J. Leppakangas, M. Marthaler and G. Schon, Phys. Rev. B
84, 060505(R) (2011).
17 K. K. Likharev, Dynamics of Josephson Junctions and Cir-
29 M. Tinkham,
Introduction to Superconductivity, 2nd
cuits (OPA, Amsterdam, 1986).
18 M. W. Johnson, M. H. S. Amin, S. Gildert, T. Lanting, F.
Hamze, N. Dickson, R. Harris, A. J. Berkley, J. Johansson,
P. Bunyk, E. M. Chapple, C. Enderud, J. P. Hilton, K.
Karimi, E. Ladizinsky, N. Ladizinsky, T. Oh, I. Perminov,
C. Rich, M. C. Thom, E. Tolkacheva, C. J. S. Truncik, S.
Uchaikin, J. Wang, B. Wilson and G. Rose, Nature 473,
194 (2011).
19 J. P. Pekola, V. F. Maisi, S. Kafanov, N. Chekurov,
A. Kemppinen, Yu. A. Pashkin, O.-P. Saira, M. Motto-
nen, and J. S. Tsai, Phys. Rev. Lett. 105, 026803 (2010).
20 J. J. Toppari, T. Kuhn, A. P. Halvari, J. Kinnunen, M. Le-
ed. (McGraw-Hill, New York, 1996).
30 A. B. Zorin and F. Chiarello, Phys. Rev. B 80, 214535
(2009).
31 T. P. Orlando, J. E. Mooij, L. Tian, C. H. van der Wal,
L. S. Levitov, S. Lloyd and J. J. Mazo, Phys. Rev. B 60,
15398 (1999).
32 private communication, M. D. Oliver.
33 H. Schoeller and G. Schon, Phys. Rev. B 50, 18436 (1994).
34 V. Ambegaokar and A. Baratoff, Phys. Rev. Lett. 10, 486
(1963).
35 T. Greibe, M. P. V. Stenberg, C. M. Wilson, T. Bauch,
V. S. Shumeiko, and P. Delsing, Phys. Rev. Lett. 106,
097001 (2011).
|
1704.08877 | 1 | 1704 | 2017-04-28T11:21:38 | Negative Poisson's Ratio in Phagraphene | [
"cond-mat.mes-hall"
] | We present the results of numerical simulation of elastic properties of phagraphene, a recently predicted but not synthesized yet quasi-two-dimensional allotrope of graphene. We show that the Poisson'ss ratio is positive for the planar configuration of phagraphene and negative for the nonplanar one. Both the Poisson's ratio and the Young's modulus are isotropic for the planar phagraphene and strongly anisotropic for the nonplanar phagraphene. | cond-mat.mes-hall | cond-mat | Negative Poisson's Ratio in Phagraphene
L.A. Openov and A.I. Podlivaev
National Research Nuclear University "MEPhI", Moscow 115409, Russian Federation
E-mail address: LAOpenov@mephi.ru
ABSTRACT
We present the results of numerical simulation of elastic properties of phagraphene,
a recently predicted but not synthesized yet quasi-two-dimensional allotrope of graphene.
We show that the Poisson's ratio is positive for the planar configuration of phagraphene
and negative for the nonplanar one. Both the Poisson's ratio and the Young's modulus are
isotropic for the planar phagraphene and strongly anisotropic for the nonplanar
phagraphene.
1. INTRODUCTION
The response of isotropic materials to mechanical stress is completely described by
two scalar quantities, the Young's modulus Y, which characterizes the ability of a material
to withstand longitudinal tension or compression, and the Poisson's ratio ν, which is equal
to the ratio of the transverse compressive strain to the longitudinal tensile strain [1]. The
elastic properties of anisotropic solids are described using a more sophisticated
mathematical apparatus: In general case, the equations of the linear theory of elasticity
contain the tensor of elastic moduli. Nevertheless, often it is possible to restrict ourselves
to just two parameters, Y and ν. In particular, for a quasi-two-dimensional graphene
monolayer [2], the following values of the Young's modulus and the Poisson's ratio have
1
been reported in the literature: Y ~ 1.0 TPa [3, 4] and ν = 0.15-0.45 (see [5] and references
therein).
For the majority of materials, the Poisson's ratio is positive. However, there are
some exceptions, including fractal structures and other heterogeneous media (see [6] and
references therein). Recently, it has been shown that for sufficiently narrow weakly
deformed graphene nanoribbons the Poisson's ratio ν can be negative and reach the value
of ~‒1.5 [7]. The reason for this effect is that compressive edge stresses lead to the
formation of transverse displacement waves localized near the boundaries of the sample
[8]. When the sample is stretched in the longitudinal direction, the wavy portions are
straightened, and the sample is expanded (rather than compressed) in the transverse
direction, which leads to a negative value of ν.
As shown in Ref. [9], phagraphene – a recently predicted planar allotrope of
graphene [10] – is unstable with respect to transverse atomic displacements, which
generates the transverse displacement waves with an amplitude of ~1 Å and results in the
formation of a nonplanar configuration of phagraphene [9, 11]. By analogy with graphene
nanoribbons [7, 8], it can be expected that the Poisson's ratio for a nonplanar phagraphene
will be negative. It should be noted, however, that there is a difference between graphene
ribbons and phagraphene. While the negative Poisson's ratio for graphene ribbons is
determined by boundary effects, in phagraphene it is caused by bulk effects (transverse
displacement waves propagate throughout the entire sample).
The purpose of our work is to perform numerical calculations of the Poisson's ratio
for planar and nonplanar configurations of phagraphene, as well as to calculate the
Young's modulus for these configurations.
2
2. COMPUTATIONAL DETAILS
The planar phagraphene was simulated by a rectangular supercell consisting of 4 x 4
= 16 primitive 20-atom cells (Figs. 1a, 1b). In this supercell, the formation of transverse
displacement waves led to a decrease in the energy of the supercell. The minimum energy
was observed in the supercell with two waves (Figs. 2a, 2b), which we used to simulate
the nonplanar configuration of phagraphene. We chose the periodic boundary conditions in
both directions within the (XY) plane and the free boundary conditions in the transverse
direction Z.
Figure 1. A 320-atom supercell for the planar configuration of phagraphene. Top view (a)
and side view (b).
3
The energy of the supercell with specified atomic coordinates was calculated in the
framework of the nonorthogonal tight-binding model [12], which takes into account all
four valence orbitals of each carbon atom and has been shown to work well for the
simulation of graphene and other carbon structures (see [9, 11, 13] and references therein).
(a)
Figure 2. The same as in Figure 1, for the nonplanar configuration of phagraphene. The
energy of this supercell is by 3.1 eV (~0.01 eV/atom) lower than that of the planar
supercell.
4
3. RESULTS AND DISCUSSION
We start with formulas for the calculation of the Poisson's ratio ν and the Young's
modulus Y for quasi-two-dimensional materials which take into account the possible
anisotropy of these quantities in the (XY) plane [14]. Let us assume that the sample has a
rectangular shape with initial length L0 (along the X axis) and width W0 (along the Y axis).
If, after stretching the sample along the X axis, its length and width become equal to L and
W, respectively, the Poisson's ratio in the Y direction can be calculated according to the
formula
,
(1)
where X = (L-L0)/L0 and Y = (W-W0)/W0 are the relative strains of the sample in the X and
Y directions, respectively. Similarly, the Poisson's ratio in the X direction after stretching
the sample along the Y axis is determined as
.
(2)
In our case, the length and the width of the sample are equal to the periods of the
supercell a and b, respectively. It should be noted that, when calculating the Poisson's
ratio νYX, the strain εX of the sample is specified as an input parameter, while the strain εY
is found by minimization of the supercell energy, whereas in the calculation of νXY, on the
contrary, the strain εY is fixed, while the strain εX is an output parameter and should be
determined. Generally, the Poisson's ratio ν of the sample depends on the strain [7].
However, we restrict ourselves to the case of small strains and, for certainty, take the input
parameters εX and εY to be equal to 0.001 in all calculations.
5
/YXYX/XYXY Under weak deformations, the Young's moduli in the X and Y directions are
calculated, respectively, according to the following formulas (similar to the case of
nanotubes [15]):
,
(3)
where S = ab is the area of the supercell, ΔE is the increment of the energy of the supercell
under the corresponding deformation, and d is the thickness of the monolayer. Here it
should be kept in mind that, the concept of the thickness of a sample does not have a clear
meaning for quasi-two-dimensional systems, Nevertheless, this quantity has often been
used to express the Young's modulus in conventional units (Pa). In particular, for
graphene and carbon nanotubes, the sample thickness is usually taken to be 3.35 Å [3, 15],
i.e., the distance between the adjacent graphene layers in graphite. We also set d = 3.35 Å
in expressions (3). This makes it possible to compare the mechanical stiffnesses of
phagraphene and graphene.
For the verification of our computational algorithms and the subsequent comparison
with the available data on graphene, in the first stage we calculated the Poisson's ratio ν
and the Young's modulus Y in single-layer graphene making use of both rectangular and
rhombic supercells. We found νXY = νYX = 0.35 and YX = YY = 0.97 TPa, which agree well
with the values ν = 0.34 [7] and Y = 1.0 TPa [3] present in the literature.
Despite the apparent anisotropy of the planar configuration of phagraphene (Fig.
1a), we obtained for it (as for graphene) equal (within the limits of computational error)
values of the Poisson's ratios νXY = νYX = 0.38 and very close values of the Young's moduli
YX = 0.84 TPa and YY = 0.86 TPa. Thus, elastic characteristics of the planar phagraphene
6
2222,XYXYEEYYSdSd differ little from graphene. The slightly less (by ~15%) value of the Young's modulus for
the planar phagraphene, as compared to graphene, is apparently due to the fact that the
planar phagraphene contains pentagons and heptagons formed by the C-C bonds, which
are absent in graphene and which make the two-dimensional crystal lattice more "soft."
For practical applications, this is not very important. Indeed, of primary interest are not
elastic but electronic characteristics of planar phagraphene, which are determined by the
presence of the so-called Dirac cones in its band structure [10].
The anisotropy of the atomic structure of the nonplanar phagraphene in the (XY)
plane is associated with the presence of transverse displacement waves in it, the minima
and maxima of which alternate along the X axis (Fig. 2b). This gives rise to a strong
anisotropy of the Poisson's ratio ν and the Young's modulus Y after stretching the sample
along the X and Y axes. Thus, we obtained the Poisson's ratios νYX = -0.04 and νXY = -0.50
and the Young's moduli YX =0.06 TPa and YY = 0.75 TPa. Note that, despite the almost
tenfold difference in the absolute values of νXY and νYX, both these quantities are negative,
whereas they are positive in the planar phagraphene. The reason for the abnormally low
Young's modulus of the nonplanar phagraphene along the X axis lies in the corresponding
orientation of the transverse displacement waves softening the sample in this direction
(Fig. 2b). The Young's modulus of the nonplanar phagraphene along the Y axis is an order
of magnitude larger, though slightly smaller, than that in graphene and planar
phagraphene.
7
4. CONCLUSIONS
The calculations of the Poisson's ratio and the Young's modulus of phagraphene
show that its elastic characteristics are isotropic in the planar configuration and strongly
(tenfold) anisotropic in the nonplanar one. The main result is that the Poisson's ratios in
the planar and nonplanar phagraphenes have different signs, regardless of the direction of
the deformation. This can be used in practice to determine the type of atomic configuration
of phagraphene samples.
Acknowledgments. This work was supported by the Russian Foundation for Basic
Research (project 15-02-02764).
REFERENCES
1. L.D. Landau and E.M. Lifshitz, Course of Theoretical Physics, Vol. 7: Theory of
Elasticity (Nauka, Moscow, 1987).
2. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V.
Grigorieva, and A.A. Firsov, Science 306, 666 (2004).
3. C. Lee, X. Wei, J.W. Kysar, and J. Hone, Science 321, 385 (2008).
4. A.E. Galashev and O.R. Rakhmanova, Phys.-Usp. 57, 970 (2014).
5. C.D. Reddy, S. Rajendran, and K.M. Liew, Nanotechnology 17, 864 (2006).
6. V.V. Novikov and K.W. Wojciechowski, Phys. Solid State 41, 1970 (1999).
7. J.-W. Jiang and H.S. Park, Nano Lett. 16, 2657 (2016).
8. V.B. Shenoy, C.D. Reddy, A. Ramasubramaniam, and Y.W. Zhang, Phys. Rev. Lett.
101, 245501 (2008).
8
9. A.I. Podlivaev and L.A. Openov, JETP Lett. 103, 185 (2016).
10. Z. Wang, X.-F. Zhou, X. Zhang, Q. Zhu, H. Dong, M. Zhao, and A.R. Oganov, Nano
Lett. 15, 6182 (2015).
11. L.A. Openov and A.I. Podlivaev, Phys. Solid State 58, 1705 (2016).
12. M.M. Maslov, A.I. Podlivaev, and K.P. Katin, Mol. Simul. 42, 305 (2016).
13. L.A. Openov and A.I. Podlivaev, Phys. Solid State 58, 847 (2016).
14. B.D. Annin and N.I. Ostrosablin, J. Appl. Mech. Tech. Phys. 49, 998 (2008).
15. O.E. Glukhova and O.A. Terent'ev, Phys. Solid State 48, 1411 (2006).
7
9
This is a preprint of the Work accepted for publication in Physics of the Solid State.
© 2016 A.F.Ioffe Physics Technical Institute, Russian Academy of Sience.
Publisher http://pleiades.online/.
10
|
1612.06666 | 1 | 1612 | 2016-12-20T14:01:04 | Lifetime enhancement for multi-photon absorption in intermediate band solar cells | [
"cond-mat.mes-hall"
] | A semiconductor structure consisting of two coupled quantum wells embedded into the intrinsic region of a {\it p-i-n} junction is proposed to be implemented as an intermediate band solar cell with ratchet state. The localized conduction subband of the right-hand side quantum well is thought as the intermediated band, while the excited conduction subband of the right-hand side quantum well, coupled to right-rand side one, is thought to acts as the ratchet state. The photo-excited electron in the intermediate band can tunnel out the thin barrier separating the wells and accumulate into ratchet subband. This might raise the electron probability of being hit by a second photon and exiting out to the continuum, increasing solar cell current. Is presented a temporal rate model for describing the charge transport properties of the cell. Calculations are carried out by solving the time-dependent Schr\"odinger equation applying the time evolution operator within a pertinent choice of the non-commuting kinetic and potential operators. The efficiency in the generation of current is analyzed directly by studying the occupation of the subbands wells in the p-i-n junction, taking into account the injection and draining dynamic provided by the electrical contacts connected to the cell. As a result, the efficiency in the generation of current was found to be directly correlated to the relationship between optical generation and recombination rates regarding to the scattering to the ratchet state rate. This suggests that a good coupling between the intermediate band and the additional band is a key point to be analyzed when developing an efficient solar cell. | cond-mat.mes-hall | cond-mat |
Lifetime enhancement for multi-photon absorption in intermediate band solar cells
1 Departamento de F´ısica, Instituto de Ciencias Exatas, UNIFAL, 37130-000, Alfenas, MG, Brazil
A T Bezerra1,3, N Studart2,3
2 Centro de Ciencias Naturais e Humanas, UFABC, 09210-580, Santo Andr´e, SP, Brazil and
3 DISSE, Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, Brazil
A semiconductor structure consisting of two coupled quantum wells embedded into the intrinsic
region of a p-i-n junction is proposed to be implemented as an intermediate band solar cell with
ratchet state. The localized conduction subband of the right-hand side quantum well is thought as
the intermediated band, while the excited conduction subband of the right-hand side quantum well,
coupled to right-rand side one, is thought to acts as the ratchet state. The photo-excited electron
in the intermediate band can tunnel out the thin barrier separating the wells and accumulate into
ratchet subband. This might raise the electron probability of being hit by a second photon and
exiting out to the continuum, increasing solar cell current. Is presented a temporal rate model for
describing the charge transport properties of the cell. Calculations are carried out by solving the
time-dependent Schrodinger equation applying the time evolution operator within a pertinent choice
of the non-commuting kinetic and potential operators. The efficiency in the generation of current
is analyzed directly by studying the occupation of the subbands wells in the p-i-n junction, taking
into account the injection and draining dynamic provided by the electrical contacts connected to
the cell. As a result, the efficiency in the generation of current was found to be directly correlated
to the relationship between optical generation and recombination rates regarding to the scattering
to the ratchet state rate. This suggests that a good coupling between the intermediate band and
the additional band is a key point to be analyzed when developing an efficient solar cell.
I.
INTRODUCTION
process [3].
The demand for renewable energy sources has been
promoting the research on semiconductor solar cells [1-
12]. Basically, a solar cell is formed by a p-i-n junc-
tion shed with light in order to excite charge carriers be-
tween valence and conduction bands. The carriers are
then drained by the contacts by a drift electric field,
giving rise to a net electric current [15]. However, to
a single band gap cell, the detailed balance determines
the current generation to be fundamentally limited by
the absorption of photons with energies greater than the
cell's band gap [1]. To overcome such limit, intermediate
bands solar cells has been proposed [2]. A set of electronic
states, called intermediate band, is introduced within the
semiconductor band gap. This affords new pathways to
the carriers [2 -- 4], allowing additional carrier generation
due to the extension of the spectral response in the en-
ergy range bellow the host-semiconductor band gap [7, 8].
Consequently, the addition of the intermediate band in-
creases the light-to-current conversion efficiency of the
solar cell. An additional condition to ensure such an effi-
ciency enhancement, is that intermediate band needs to
be radiatively connected to the valence band but electri-
cally isolated from the other bands [9].
The use of the localized subbands of quantum wells,
embedded into the intrinsic region of p-i-n solar cells,
are promising candidates to be used as the intermediate
bands [3]. They has been suggested to effectively enhance
solar cell efficiencies [7, 10]. However, extracting carriers
from localized states often requires inelastic processes,
as multiphoton excitation [11, 12]. That becomes a new
problem due to the low carrier lifetime into the interme-
diate subbands regarding to the interband recombination
Hence, structures with ratchet states has been pro-
posed [3 -- 5]. The ratchet are states optically- and
electrically-coupled to conduction band and decoupled
from the valence band, acting as scattering channels for
electrons excited into the intermediate band. The cou-
pling between intermediate band and ratchet states, al-
lows for excited electrons to increase their lifetimes within
the intermediate band. This might increases the multi-
photon transition probability and, consequently, the solar
cell efficiency [13].
The use of quantum cascade-like scattering to work as
the ratchet transport dynamics has been theoretically [5]
and experimentally [6] proposed. It showed to be feasi-
ble and promising for increasing the cell's efficiency. In
such approach, the energy difference between the inter-
mediate and hatchet states are set to be in resonance with
the host-semiconductor LO-phonon energy, allowing for a
phonon-assisted scattering. This spatially shift the opti-
cally generated electron-hole pair, decreasing the recom-
bination probability, and also increases the electron's life-
time within the intermediate band. However there still
has a lack of information about the transport dynamics
within the excitation/scattering/excitation process.
Obviously, studies of this kind of structures must rely
on their quantum properties, once we are dealing with
quantum devices. Therefore the analyses of such a sys-
tems under the quantum mechanics perspective is funda-
mental, once we consider the quantum well subbands as
the basis of the cell's operation [8, 14, 15].
In what follows, we propose an p-i-n layered structure
with two coupled quantum wells embedded into the in-
trinsic semiconductor region, to be implemented as an
intermediate band solar cell with ratchet state. The
2
while the right-hand side one (rQW) is thinner having
only one. The intention was to use the rQW subband as
the intermediate band and the lQW's excited subband as
the ratchet state. Being the latter an excited state, the
selection rules for interband transition uncouple it for
the valence band ground state [16], as required [3]. This
also enables new pathways to the intersubband absorp-
tion process hopefully increasing even more the current
generation.
In details, the resulting intermediate band solar cell
under analysis, was based on a layered structure within
material and parameters found in the literature [4]. The
1 µm wider intrinsic layer and the doped contacts has
been chosen to be GaxAl1−xAs, with x = 0.3. The left-
and the right-hand side quantum wells are formed by
GaAs layers with widths 110 A and 40 A, respectively,
coupled each other by a 80 A GaxAl1−xAs barrier, as
shown in the 1. The energy shift between the rQW
ground state and the lQW excited state was set to be
around 32 meV, the GaAs LO-phonon energy [18].
It has been chosen the drain and injection contacts, n
and p layers, respectively, to be doped with concentra-
tions of N = 1017 cm−3. Without any external electric
potential applied to the device, at thermal equilibrium,
the Fermi level is the same throughout the structure (see
the bold black-dashed line in the 1(a)). This gives rise
to a built-in potential, Vbi = 4.23 eV, by the depletion
of the potential profile at intrinsic region. Then a drift
field is established, responsible for extracting photogener-
ated carriers towards the drain (n) contact [15]. In order
to restore the thermal equilibrium, the same amount of
drained charge is re-injected by the injection (p) contact
into the cell, having as a net effect the generation of a
short circuit current on the external circuit.
Under external bias, the potential profile changes due
to the equilibrium within the contacts' electrochemical
potentials, as shown in the 1(b) at backward bias con-
dition, and in the 1(c) at the forward bias condition. It
was considered for the levels occupation the equilibrium
with the quasi-Fermi levels established by the contacts.
At forward bias condition, we do not we expect optical
generation of current, since the conduction band states,
at thermal equilibrium, are kept fulled. Under such a
bias condition, current is expected only in the presence
of inelastic scattering processes (common to a p − i − n
diode) [15], not considered in the present model.
The system was modeled using uncoupled parabolic
valence and conduction bands within the effective mass
approximation [16]. The eigenfunctions were numeri-
cally obtained by solving the time-dependent Schrodinger
equation through the Split Operator method, within the
imaginary time evolution [17]. In the method, an initially
guessed wave function is evolved in time by successive ap-
plications of the time-evolution operator, exp(−iHdτ /¯h),
choosing dτ = −idt. However, the system's Hamiltonian,
H = K + U , formed by the non-commuting kinetic (K)
and potential operators (U ), imposes an intrinsic error
when applied to the time-evolution operator. The error
FIG. 1. (color online) Schematics of the potential profile of the
intermediate band solar cell with ratchet states. (a) Structure
without aplying external potential, the equilibrium between
doped contacts gives rise to a built-in potential eVbi. The
arrows represent the optical transitions responsible to gener-
ation of photocurrent. (b) Structure under backward external
bias eVf . µ(cid:63)
n(p) represent the quasi-fermi levels for conduction
(valence) band. (c) Structure under forward external bias eVb.
transport dynamics is based on the quantum cascade-like
scattering at the intermediate band. We analyze the cur-
rent response of the cell by means of a rates model using
the recombination and generation rates, directly obtained
through the system eigenfunctions. We find a direct cor-
relation between the scattering rate to the ratchet state
and the recombination rates, rising the solar cell cur-
rent. However, we observe conditions that even having
the scattering to the ratchet states, the resulting current
could result in a decrease of the net current.
II. METHODS
A. Structure
As discussed earlier, the major problem of using quan-
tum well subbands as intermediate bands is the lowest
excitation time for the electron at the intermediate band
regarding to its recombination (back to valence band)
time. Allowing such an electron to relax into a ratchet
state might increase its lifetime and, consequently, the
two-photon process efficiency [5, 13].
In order to enhance the generation of current, the cho-
sen potential profile was thought to have two quantum
wells, and the work is based on dealing with their ab-
sorption and emission dynamics. As we can observe in
the 1, the left-hand side quantum well (lQW) is wider,
having two confined subbands in the conduction band,
can be easily handled by properly splitting the exponen-
tial argument.
Choosing
3
e−i Hdt
¯h = e−i U dt
2¯h e−i Kdt
¯h e−i U dt
2¯h + O(dt3),
(1)
the error in time evolution can be arbitrarily controlled
by appropriate choice of the time increment dt, once
it is proportional to the third order of dt. The ex-
cited subbands are obtained carrying out the time evolu-
tion together with the Gram-Schmidt orthonomalization
scheme. Within the eigenfunctions, the subbands' ener-
gies are obtained by the mean of the system's Hamilto-
nian.
B. Rates Model
In order to model the electronic excitation and recom-
bination dynamics, it was developed a semiclassical rates
model taking into account the electronic subbands as sim-
ple levels, as shown in the 2.
The optical processes lead to changes in the carrier con-
centration of the levels within time. The spaced-hatch
orange boxes in the 2, represent the valence levels at the
lQW and rQW, within carrier concentrations of Nvl and
Nvr, respectively. The closed-hatch green boxes repre-
sent the intermediate band levels, within carriers con-
centrations of Nir, N gnd
(considering the left
well having a ground and an excited level). Nc is the car-
rier concentration of the conduction band level. G(R)s
ij
is the generation (recombination) rate for the absorption
between bands i to j at the s-hand side quantum well.
Ti(v) is the transition rate between lQW and rQW at in-
termediate (valence) band. This rate is related to the
phonon-assisted scattering process between the interme-
diate band and the ratchet state. It was set as a control
parameter for the simulation.
, and N ex
il
il
The changes of the carriers concentrations within time
are
viNvr + Rr
Nir = Gr
N ex
il = TiNir + Rl
il = Gl
Nc = Gr
N gnd
ciNc − (Gr
ciNc + Gl
viNvl + Rl
icNir + Gl
ic + Rr
il − (Gl
iN gnd
il − (Gl
iN ex
il − (Rl
icN ex
iv)Nir − TiNir (2)
il (3)
(4)
i)N ex
iv)N gnd
ic + Rl
i + Rl
ci + Rr
ci)Nc, (5)
il
where Nband is a short representation to dNband/dt. The
change with time in the electrons' concentration within
a specific band.
Let's begin with the 2. At steady state condition,
Nir = 0, so
FIG. 2. (color online) Levels schematics showing the possi-
ble transitions and their respective rates. The spaced-hatch
orange boxes represent the valence levels at the lQW and
rQW, within carrier concentrations of Nvl and Nvr, respec-
tively. The closed-hatch green boxes represents the interme-
diate levels, within carriers concentrations of Nir, N gnd
, and
N ex
il , considering the left well having a ground and an ex-
cited level. Nc is the conduction level carrier concentration.
G(R)s
ij is the generation (recombination) rate for the absorp-
tion between bands i to j at the s-hand side quantum well.
Tv(i) is the transition rate between lQW and rQW at valence
(intermediate) band.
il
3, also at steady state condition ( N ex
il = 0), yields
N ex
il =
Gl
iN gnd
il + Rl
ciNc + TiNir
Gl
ic + Rl
i
.
(7)
We can use 4 to determine the relationship between
excited subband in the lQW, considering once more the
steady state condition,
il = 0. This gives
N gnd
N gnd
il =
Gl
viNvl + Rl
i + Rl
iv
Gl
iN ex
il
.
(8)
Backing to the 7, and after some simple algebra
N ex
il =
Gl
iGl
viNvl + (Gl
iv)(Rl
ciNc + TiNir)
i + Rl
γ
,
(9)
where γ = (Gl
i + Rl
iv)(Gl
ic + Rl
i) + Gl
iRl
i.
The current extracted from well's region was consid-
ered to be proportional to the change of the carriers con-
Nc. Substituting 6 and 9
centration at conduction band,
into 5, yields
Nc
(cid:104)
Nir =
Gr
viNvr + Rr
Gr
ic + Rr
ciNc
iv + Ti
.
(6)
where
= κNc + Gl
i+Rl
iv)Gl
ic + (Gl
Gr
γ
iGl
icGl
γ
vi
icTi
(cid:105)
(10)
Nvl +
Gr
vi
ic+Rr
iv+Ti
Gr
Nvr,
(cid:104) (Gl
i+Rl
iv)Gl
γ
ic
(cid:105)
− 1
+
i+Rl
ic+Rr
icTi
iv)Gl
iv+Ti)γ +
(Gr
1
ic+Rr
iv+Ti
Gr
= Rl
ci
(cid:104) (Gl
κ
Rr
ci
(cid:105)
− 1
,
(11)
Gl(r)
vi = ω0
nphEp
¯hω
(cid:88)
m,n
vc f (Em)[1 − f (En)],
Dqw
(15)
4
depends on the recharge of the wells via conduction band
states, with rates Rl(r)
.
ci
where Ep = 23 eV is the Kane energy for GaAs [18].
The sum is done over the valence (m) and conduction
band states (n), weighted by their occupations given by
the Fermi distributions f(cid:0)Em(n)
(cid:1). The quasi-Fermi level
C. Transition rates
were determined by the contacts electrochemical poten-
tials [15].
The photo-generation process is, mainly, a result of two
interband transitions, one at the bulk region and other
at the quantum wells region. However, in the latter one,
to extract carriers from the confined subbands a second
transition needs to take place [3, 4]. Both the tunnel-
ing and the intersubband transition to continuum states,
extended throughout the contacts region, can be used as
such a secondary process [5, 6]. Therefore, the knowledge
of the transitions rates interplay is fundamental.
We have determined the rates by means of the Fermi's
golden Rule [16, 18], using the eigenstates resulting from
the Split-Operator method. The generation rate for elec-
trons excited from valence band to conduction band at
bulk region, by photons with energy ¯hω, is given by [18]
(cid:18) 2p2
vc
m0
(cid:19) 2
3
Gbulk
vc
(¯hω) = ω0
nph
¯hω
Dvc(¯hω),
(12)
where ω0 = πe2¯h/m0ε, e and m0 are the electron charge
and mass, respectively, ε is the GaAs dielectric constant,
nph is the photons' density set to unity, and pvc is the mo-
mentum matrix element, which can determined using the
Kane approximation [16]. Dvc is the three-dimensional
electronic density of states given by
√
2
Dvc(¯hω) =
(m∗)3/2(cid:112)¯hω − Eg
π2¯h3
being m∗ the electron's effective mass, and Eg the semi-
conductor band gap.
At the quantum wells region, the generation rates,
Gl(r)
, are obtained by changing the three-dimensional
vi
density of states to a two-dimensional one, taking into
account the overlap of the envelope functions. So
(cid:88)
m∗
π¯h2Lqw
m,n
Dqw
vc (¯hω) =
(cid:104)φm
v φn
c (cid:105)2Θ(Emn − ¯hω), (14)
where the sum is done over the valence φm
v and con-
duction band φn
c eigenstates, separated in energy by
Emn = Eg − Ec
n − Ev
m. Lqw is the well's width, and
Θ is the Heaviside step function, related to the two-
dimensional density of states.
The interband generation rates, Gl(r)
vi are obtained by
The interband recombination rates (Rbulk
iv ) are
similar to the interband generation ones. However, we
might to change the density of photons to nph + 1, and
to replace the electronic density of states by the photons
density of states ρ(¯hω) = (¯hω)2/π2(¯hv)3, where v is the
light velocity within the semiconductor [18].
vc
, Rl(r)
The intersubband generation rates at the quantum
wells region, Gl(r)
ic , are given by
Gl(r)
ic (¯hω) = ω0
nph
¯hωLqw
pif2f (Ei)[1 − f (Ef )], (16)
(cid:88)
i,f
i
f
zψl(r)
(cid:105)/Lqw, where ψl(r)
where the sum is done over the quantum well
local-
ized subbands (i,j), again taking into account their
occupations by using the Fermi distributions f (E).
The intersubband momentum matrix element is pif =
−i¯h(cid:104)ψl(r)
is the left (right)
quantum well i-th subband eigenfunction, with energy
Ei. The intersubband recombination rate at the lQW, Rl
i
was considered to be constant, within a value of 10 GHz.
With the evaluated generation and recombination rates
we are able, to feed the rates model and determine the
level dynamics. The results are presented in the next
section.
i
In the solar cell, the electrons excited both from va-
lence and intermediate band, towards conduction band,
should be extracted from quantum wells regions by the
drain contact, restoring the thermal equilibrium. Hence,
in the model, we considered the infinity mobility regime,
allowing effectively collection of charge by the drain con-
tact [2]. The regime is achieved preventing electrons to
relax back from continuum to the wells' subbands, choos-
ing Rl
ci = 0 in the 11, so κ = 0.
ci = Rr
To analyze the contribution of adding the left-hand
side quantum well to the structure, the quantum wells
were first assumed to be uncoupled from each other, mak-
ing Ti = 0 in the 10, yielding
Nc(Ti=0) =
Gl
icGl
iGl
vi
γ
Nvl +
Gr
icGr
vi
ic + Rr
iv
Gr
Nvr.
(17)
,
(13)
III. RESULTS
5
pronounced peak close to the built-in potential value, for
potentials between 3 to 4 eV. Peak intensity increases
with increasing wells' coupling rate until saturates for Ti
greater than 500 GHz. Such a behavior was understood
as follows.
As given by 15, the interband generation rate (Gr
vi),
and the interband recombination rate (Rr
iv) are deter-
mined by a conjunction of three factors - the Θ step
function, the Fermi distributions, and the overlap be-
tween valence and intermediate subbands eigenfunctions
[18]. Therefore, due to the step function, low energetic
photons (regarding to the bands separation) are unable
to excite electrons from valence to intermediate subband.
The excitation of electrons by higher energetic photons
is conditioned by the external bias applied to the cell
(which controls the quasi-Fermi levels), and by the over-
lap between the valence and intermediate band eigen-
states (which decreases with increasing the energy sepa-
ration from each other).
For backward bias condition, encompassing the built-
in potential condition, the hole subbands are considered
to be kept filled through the equilibrium within the in-
jection contact, while the electron subbands are consid-
ered to be kept empty by the drain (see the quasi-Fermi
levels in the 1(b)). Instead, for the forward bias condi-
tion, the electron subbands are kept filled while the hole
subbands are kept empty (see the quasi-Fermi levels in
the 1(c)).
In the latter condition, the current through
the cell is non-null only in the presence of inelastic scat-
tering processes [15]. Therefore, the quasi-Fermi levels,
determined by the potential applied to the cell, is a fun-
damental factor for determining both the generation and
the recombination rates. That is directly reflected in the
behavior of the cell's current, as discussed next.
As noted, the liquid current is non-null only for back-
ward bias, as expected by the levels occupations. Analyz-
ing 19 in details, the first term inside the square-brackets,
related to the transitions into the lQW, presents a step-
like shape being close to unit for potentials lesser than
∼ 4 eV, and null elsewhere. The second term, related
to the transitions into the rQW, presents the same step-
like fashion whose intensity is close to unit for potentials
lesser than ∼ 3 eV, and null elsewhere. Therefore, the
subtraction between such a terms determines the peak
width. The peak edges are given by the intensities rela-
tionship between the generation and recombination pro-
cesses at the lQW and rQW regions.
The step-like profile, discussed above, is mainly due to
the step-like shape of the recombination rates Rl
iv and
Rr
iv. Even though the intensities of the recombination
rates are three to four orders of magnitude lower then the
generation ones, the last are peaked functions with max-
ima for specific biases, null elsewhere. For such a biases,
both the first and the second terms inside the square-
brackets of the 19 are close to the unit, since the domi-
nant terms are the generations rates. However, for biases
greater than 3 eV (4 eV), Rr
iv) is the dominant rate,
becoming the square-brackets term null. Consequently,
iv (Rl
FIG. 3.
(color online) Liquid current as a function of the
potential applied to the cell and the transition rate Ti between
the lQW e rQW. The inset shows the profile of liquid current
for Ti = 132, 5 GHz.
Clearly, when uncoupled, both the lQW and the rQW
might independently contribute for changing the concen-
tration of carriers in the conduction band. The contri-
bution is proportionally to their valence band concentra-
tions, Nvl and Nvr weighted by their specific generation
Gl(r)
iv . The
greater the recombination rate regarding to the gener-
ation one, the lesser effective is the current generation
process.
ic , regarding to the recombination rates Rl(r)
We now may think in terms of a liquid current, Il,
proportional to the change in the concentration of con-
duction carriers (times the electronic charge), when com-
paring the system within coupled (Ti (cid:54)= 0) and uncoupled
(Ti = 0) quantum wells,
(cid:104) NcTi(cid:54)=0 − NcTi=0
(cid:105)
Il = e
.
(18)
Subtracting 17 from 10, Il reads
Il
(cid:104) (Gl
= eGr
ic+Rr
Gr
i+Rl
iv)Gl
γ
ic
viTi
iv+Ti
×
− Gr
ic
Gr
ic+Rr
iv
(cid:105)
.
(19)
Such a liquid current was interpreted as the contribu-
tion (to the current) of adding the additional scattering
channel, charging the ratchet state. It would enhances
the carriers lifetime at the intermediate band, increasing
the cell's efficiency.
In the 3, we presented the liquid current, given by
the 19, as a function of the transition rate Ti and the
cell's potential. The potential was varied from backward
to forward biases relative to the built-in potential, uni-
formly spread through the cell's intrinsic region (see 1
(b) and (c)). For Ti greater than 1 GHz, we observed
an effective enhancement of the liquid current, with a
the liquid current is non-null only in that specific poten-
tial range.
Then the inclusion of the lQW and its relationship with
the rQW determines the presence of an enhancement in
the cell's current. The peak width in the liquid current
is, therefore, controlled by subbands occupation of both
wells, which determines the recombination rates cutoffs
with the potential. So, the liquid current peak could
in principle be enlarged by increasing the energy sepa-
ration between the rQW state (intermediate band) and
the ground state of the lQW, responsible to uncouple the
ratchet state to the valence band.
The saturation, which determines the liquid current
peak intensity, is mainly drive by the first term at the
right-hand side of 19. It takes into account the relation-
ship between both the rQW recombination (Rr
iv) and
generation (Gr
ic) rates, regarding to the transition rate
between the wells (Ti) itself. Once more the recombina-
tion rate Rr
iv, with the same step-like shape and max-
imum intensity of around 100 GHz, is responsible for
controls the liquid current intensity. Increasing Rr
iv de-
creases the electrons concentration at the intermediate
band and, consequently, the probability of such electrons
to be scattered to the lQW, within rate Ti. Therefore,
for Ti lesser than such a recombination rate, we expected
a lay back in the cell's current as observed.
Our results has been shown a clear enhancement in
the generation of current by the intermediate band so-
lar cell, within the excited state of the lQW acting as
a quantum ratchet state. This is in consonance with
Noda and coworkers [4], who developed a thermodynam-
ical model and concluded the use of intermediate band
solar cells, adding the ratchet state is expected to al-
ways enhance solar cell's efficiency beyond the Shockley-
Quiesser limit [1]. They also showed that the inclusion
of the intermediate band by itself is not a determining
condition for increasing efficiency. The work provided
conditions where the intermediate band solar cells could
be less efficient than singled junction ones. According
to them, an intermediate band solar cell will always be
more efficient then a singled junction one, and overcome
the Shockley-Queisser limit, only when adding ratchet
states.
However, we observed that even introducing the quan-
tum ratchet state, such a behavior can be changed. As
discussed earlier, the liquid current behavior is a conse-
quence of the relationship of several generation and tran-
sition processes. 4, presents the liquid current behavior,
for Ti = 10 GHz and a backward potential of 3.8 eV, as a
function of the intersubband recombination rate Rl
i. We
can observe the change in the liquid current signal, which
becomes negative for higher Rl
i, indicating that increas-
ing such a rate can be harmful to the liquid current for
specific conditions.
Independently of how effective is the coupling between
the intermediate band and the ratchet state, regarding
of Ti rate, our model shows there are conditions in which
the introduction of the ratchet states is not a guarantee
6
FIG. 4. Liquid current as a function of the transition rate
between the ground and excited subband at the rQW, RL
i ,
for Ti = 10 GHz and 3.8 eV. We can observe a current's
signal change around Rl
i = 70 GHz.
of increasing cell's current. Allowing electrons to be scat-
tered into the ratchet state should increase their lifetime
into the intermediate band, but the relationship between
the recombination and the scattering rates can both in-
crease or decrease the solar cell current, depending on
the other rates involved in the cell's dynamics.
IV. CONCLUSION
In summary, we have demonstrated the possibility of
using the subbands of quantum wells as the interme-
diate band and ratchet state of an intermediate band
solar cell with ratchet state, using a quantum cascade
like approach. The cell was considered to be a double
quantum well structure within GaAlAs and GaAs layers
sandwiched between heavily doped GaAs contacts. The
system's eigenfunctions were numerically simulated by
solving the time-dependent Schrodinger equation. The
recombination and generation rates, used in a semiclas-
sical rates model, were obtained by means of the Fermi
golden rule, within the simulated eigenstates. With al-
lowing electron to scattering inside the ratchet state, as a
LO-phonon assisted scattering, we have shown an effec-
tive increase in the cell's current for specific values of elec-
trical potential, close to the built-in potential of the cell.
Agreeing with other works, the inclusion of the ratchet
state increases the solar cell current, by increasing the
electron's lifetime into the intermediate band. However,
the addition of the ratchet state is not the unique condi-
tion determining the cell's efficiency. The recombination
and generation dynamics plays a fundamental role, and
we can achieve situations in which the solar cell current
is decreased even with the inclusion of the ratchet state.
7
ACKNOWLEDGMENTS
We thank CNPq and CAPES for research fellowships
and for direct and indirect research funding. N.S. thanks
CAPES for a Visiting Senior Professorship at UFABC.
The authors thank CNPq for providing funding for this
research through INCT-DISSE consortium.
[1] Shockley W, and Queisser H J 1961 Journ. Appl. Phys.
Phys. Rev. Lett. 97 247701
32 510
[2] Luque A, and Mart´ı A 1997 Phys. Rev. Lett. 78 5014
[3] Yoshida M, Ekins-Daukes N J, Farrell D J, and Phillips
C C 2012 Appl. Phys. Lett. 100 263902
[4] Noda T, Elborg M, Mano T, Kawazu T, Han L and
Sakaki H 2016 Journ. Appl. Phys 119 085105
[5] Curtin O J, Yoshida M, Pusch A, Hylton N P, Ekins-
Daukes N J, Phillips C C, and Hess O 2016 IEEE J.
Photovoltaics 6 673
[6] Sugiyama M S, Wang Y, Watanabe K, Morioka T, Okada
Y, and Nakano Y 2012 IEEE J. Photovoltaics 2 298
[7] Barnham K W J, and Duggan G 1990 Journ. Appl. Phys
67 3490
[8] Cabrera C I, Rimada J C, Courel M, Hernandez L, Con-
nolly J P, Enciso A, and Contreras-Solorio D A 2013
Natu. Resour. 4 235
[12] Elborg M, Noda T, Mano T, Jo M, Sakuma Y, Sakoda
K, and Han L 2015 Sol. Ener. Mat. and Sol. Cell. 134
108
[13] Pusch A, Yoshida M, Hylton N P, Mellor A, Phillips C
C, Hess O, and Ekins-Daukes N J 2016 Prog. Photovolt:
Res. Appl. 24 656
[14] Datas A, L´opez E, Ramiro I, Antol´ın A, Mart´ı A, Luque
A, Tamaki R, Shoji Y, Sogabe T, and Okada Y 2015
Phys. Rev. Lett. 114 157701
[15] Datta S 2012 Lessons for Nanoelectronics: A new per-
spective on transport (Singapure: World Scientific Pub-
lishing Company)
[16] Bastard G 1992 Wave Mechanics Applied to Semiconduc-
tor Heteroestructures (Paris: Les Editions de Physique,
JOUVE) p 247
[17] Degani M H and Maialle M Z 1010 J. Comput. Theor.
[9] Luque A, Mart´ı A, and Stanley C 2012 Nat. Photon. 6
Nanosci. 7 454
146
[10] Anderson N G 1995 Journ. Appl. Phys 78 1853
[11] Mart´ı A, Antol´ın E, Stanley C R, Farmer C D, L´opez
N, D´ıaz P, C´anovas E, Linares P G, and Luque A 2006
[18] Singh J 2003 Electronic and Optoeletronic Properties of
Semiconductors Structures (New York, NY: Cambridge
University Press) p 222, 360, 362
|
1212.1355 | 1 | 1212 | 2012-12-06T15:43:49 | Adaptive tuning of Majorana fermions in a quantum dot chain | [
"cond-mat.mes-hall"
] | We suggest a way to overcome the obstacles that disorder and high density of states pose to the creation of unpaired Majorana fermions in one-dimensional systems. This is achieved by splitting the system into a chain of quantum dots, which are then tuned to the conditions under which the chain can be viewed as an effective Kitaev model, so that it is in a robust topological phase with well-localized Majorana states in the outermost dots. The tuning algorithm that we develop involves controlling the gate voltages and the superconducting phases. Resonant Andreev spectroscopy allows us to make the tuning adaptive, so that each pair of dots may be tuned independently of the other. The calculated quantized zero bias conductance serves then as a natural proof of the topological nature of the tuned phase. | cond-mat.mes-hall | cond-mat |
Adaptive tuning of Ma jorana fermions in a quantum dot chain.
Ion C. Fulga,1 Arbel Haim,2 Anton R. Akhmerov,1, 3 and Yuval Oreg2
1 Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
2Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 76100, Israel
3Department of Physics, Harvard University, Cambridge, MA 02138
(Dated: February 5, 2014)
We suggest a way to overcome the obstacles that disorder and high density of states pose to the
creation of unpaired Ma jorana fermions in one-dimensional systems. This is achieved by splitting
the system into a chain of quantum dots, which are then tuned to the conditions under which the
chain can be viewed as an effective Kitaev model, so that it is in a robust topological phase with
well-localized Ma jorana states in the outermost dots. The tuning algorithm that we develop involves
controlling the gate voltages and the superconducting phases. Resonant Andreev spectroscopy allows
us to make the tuning adaptive, so that each pair of dots may be tuned independently of the other.
The calculated quantized zero bias conductance serves then as a natural proof of the topological
nature of the tuned phase.
PACS numbers: 74.45.+c, 74.78.Na, 73.63.Kv, 03.65.Vf
I.
INTRODUCTION
Ma jorana fermions are the simplest quasiparticles pre-
dicted to have non-Abelian statistics.1,2 These topo-
logically protected states can be realized in condensed
matter systems, by making use of a combination of
strong spin-orbit coupling, superconductivity, and bro-
ken time-reversal symmetry.3–5 Recently, a series of ex-
periments have reported the possible observation of Ma-
jorana fermions in semiconducting nanowires,6–9 attract-
ing much attention in the condensed matter community.
Associating the observed experimental signatures ex-
clusively with these non-Abelian quasiparticles, however,
is not trivial. The most straightforward signature, the
zero bias peak in Andreev conductance10,11 is not unique
to Ma jorana fermions, but can appear as a result of var-
ious physical mechanisms,12–18 such as the Kondo effect
or weak anti-localization. It has also been pointed out
that disorder has a detrimental effect on the robustness
of the topological phase, since in the absence of time-
reversal symmetry it may close the induced supercon-
ducting gap.19 This requires experiments performed with
very clean systems. Additionally, the presence of multi-
ple transmitting modes reduces the amount of control one
has over such systems,20–23 and the contribution of extra
modes to conductance hinders the observation of Ma jo-
rana fermions.24 Thus, nanowire experiments need setups
in which only few modes contribute to conductance.
In this work we approach the problem of realizing
systems in a non-trivial topological phase from a dif-
ferent angle. We wish to emulate the Kitaev chain
model25 which is the simplest model exhibiting unpaired
Ma jorana bound states. The proposed system consists
of a chain of quantum dots (QDs) defined in a two-
dimensional electron gas (2DEG) with spin orbit cou-
pling, in proximity to superconductors and sub jected to
an external magnetic field. Our geometry enables us to
control the parameters of the system to a great extent
by varying gate potentials and superconducting phases.
FIG. 1: Examples of systems allowing implementation of a
Kitaev chain. Panel (a): a chain of quantum dots in a 2DEG.
The QDs are connected to each other, and to superconductors
(labeled SC), by means of quantum point contacts. The first
and the last dots are also coupled to external leads. The
normal state conductance of quantum point contacts (QPCs)
between adjacent dots or between the end dots and the leads
is G(cid:107) , and of the QPCs linking a dot to a superconductor is
G⊥ . The confinement energy inside each QD can be controlled
by varying the potential Vgate . Panel (b): Realization of the
same setup using a nanowire, with the difference that each
dot is coupled to two superconductors in order to control the
strength of the superconducting proximity effect without the
use of QPCs.
We will show how to fine tune the system to the so-
called “sweet spot” in parameter space, where the Ma-
jorana fermions are well-localized at the ends of the sys-
tem, making the topological phase maximally robust. A
sketch of our proposed setup is presented in Fig. 1a).
The setup we propose and the tuning algorithm is not
restricted solely to systems created in a two-dimensional
electron gas. The essential components are the ability
to form a chain of quantum dots and tune each dot sep-
arately.
In semiconducting nanowires the dots can be
formed from wire segments separated by gate-controlled
tunnel barriers, and all the tuning can be done by gates,
except for the coupling to a superconductor. This cou-
pling, in turn, can be controlled by coupling two super-
conductors to each dot and applying a phase difference
to these superconductors. The layout of a nanowire im-
plementation of our proposal is shown in Fig. 1b).
This geometry has the advantage of eliminating many
of the problems mentioned above. By using single level
quantum dots, and also quantum point contacts (QPC)
in the tunneling regime, we solve issues related to mul-
tiple transmitting modes. Additional problems, such as
accidental closings of the induced superconducting gap
due to disorder, are solved because our setup allows us
to tune the system to a point where the topological phase
is most robust, as we will show.
We present a step-by-step tuning procedure which fol-
lows the behavior of the system in parallel to that ex-
pected for the Kitaev chain. As feedback required to
control every step we use the resonant Andreev conduc-
tance, which allows to track the evolution of the system’s
energy levels. We expect that the step-by-step structure
of the tuning algorithm should eliminate the large num-
ber of non-Ma jorana explanations of the zero bias peaks.
A related layout together with the idea of simulating
a Kitaev chain was proposed recently by J. D. Sau and
S. Das Sarma.26 Although similar in nature, the geom-
etry which we consider has several advantages. First of
all, coupling the superconductors to the quantum dots in
parallel, allows us to not rely on crossed Andreev reflec-
tion. More importantly, being able to control inter-dot
coupling separately from all the other properties allows
to address each dot or each segment of the chain elec-
trically. This can be achieved by opening all the QPCs
except for the ones that contact the desired dots.
This setup can also be extended to more complicated
geometries which include T-junctions of such chains.
Benefiting from the high tunability of the system and
the localization of the Ma jorana fermions, it might then
be possible to implement braiding27,28 and demonstrate
their non-Abelian nature.
The rest of this work is organized as follows. In sec-
tion II we briefly review a generalized model of Kitaev
chain, and identify the ”sweet spot” in parameter space
in which the Ma jorana fermions are the most localized.
The system of coupled quantum dots is described in sec-
tion III. For the purpose of making apparent the resem-
blance of the system to the Kitaev chain, we present a
simple model which treats each dot as having a single
spinful level. We then come up with a detailed tuning
procedure describing how one can control the parameters
of the simple model, in order to bring it to the desired
2
point in parameter space. In section IV our tuning pre-
scription is applied to the suggested system of a chain of
QDs defined in a 2DEG, and it is shown using numeri-
cal simulations that at the end of the process the system
is indeed in a robust topological phase. We conclude in
section V.
II. GENERALIZED KITAEV CHAIN
In order to realize unpaired Ma jorana bound states,
we start from the Kitaev chain25 generalized to the case
where the on-site energies as well as the hopping terms
are not uniform and can vary from site to site. The gen-
(cid:104)(cid:16)
L−1(cid:88)
eralized Kitaev chain Hamiltonian is defined as
†
†
n+1a†
(cid:17)
(cid:105)
n+1an + ∆n eiφn a
tn eiθn a
n
n=1
+ h.c.
+ εna†
nan
HK =
,
(2.1)
where an are fermion annihilation operators, εn are the
on-site energies of these fermions, tn exp(iθn ) are the
hopping terms, and ∆n exp(iφn ) are the p-wave pairing
terms.
The chain supports two Ma jorana bound states local-
ized entirely on the first and the last sites, when (i):
εn = 0, (ii): ∆n = tn , and (iii) φn+1 − φn − θn+1 − θn = 0.
The larger values of tn lead to a larger excitation gap.
The condition (iii) is equivalent, up to a gauge transfor-
mation, to the case where the hopping terms are all real,
and the phases of the p-wave terms are uniform. The en-
ergy gap separating the Ma jorana modes from the first
excited state then equals
Egap = 2 min {tn}n .
(2.2)
The above conditions (i)–(iii), constitute the “sweet
spot” in parameter space to which we would like to tune
our system. Since all of these conditions are local and
only involve one or two sites, our tuning procedure in-
cludes isolating different parts of the system and mon-
itoring their energy levels. For that future purpose we
will use the expression for excitation energies of a chain
of only two sites with ε1 = ε2 = 0:
E12 = ±(t1 ± ∆1 ).
(2.3)
III. SYSTEM DESCRIPTION AND THE
TUNING ALGORITHM
The most straightforward way to emulate the Kitaev
chain is to create an array of spinful quantum dots, and
apply a sufficiently strong Zeeman field such that only
one spin state stays close to the Fermi level. Then the
operators of these spin states span the basis of the Hilbert
space of the Kitaev chain. If we require normal hopping
(cid:17)
(3.1)
between the dots and do not utilize crossed Andreev re-
flection, then in order to have both tn and ∆n nonzero
we need to break the particle number conservation and
spin conservation. The former is achieved by coupling
each dot to a superconductor, the latter can be achieved
by spatially varying Zeeman coupling,29,30 or more con-
ventionally by using a material with a sufficiently strong
spin-orbit coupling. Examples of implementation of such
a chain of quantum dots in a two dimensional electron gas
and in semiconducting nanowires are shown in Fig. 1.
We neglect all the levels in the dots except for the one
closest to the Fermi level, which is justified if the level
spacing in the dot is larger than all the other Hamilto-
nian terms. We neglect the Coulomb blockade, since we
assume that the dot is strongly coupled to the supercon-
ducting lead. The general form of the BdG Hamiltonian
describing such a chain of spinful single-level dots is then
(cid:88)
given by:
(µnσ0 + Vz σz ) c†
(cid:16)
n,s cn,s(cid:48)
HS =
n,s,s(cid:48)
+ (cid:0)wn eiλnσ c†
n,s cn+1,s(cid:48) + h.c.(cid:1) ,
†
∆ind,n eiΦn iσy c†
1
+
n,s c
n,s(cid:48) + h.c.
2
where c†
n,s and cn,s are creation and annihilation oper-
ators of a fermion with spin s in the n-th dot, and σi
are Pauli matrices in spin space. The physical quanti-
ties entering this Hamiltonian are the chemical poten-
tial µn , the Zeeman energy Vz , the proximity-induced
pairing ∆ind,n exp(iΦn ), and the inter-dot hopping wn .
The vector λn characterizes the amount of spin rotation
happening during a hopping between the two neighbor-
ing dots (the spin rotates by a 2λ angle). This term
may be generated either by a spin-orbit coupling, or by
a position-dependent spin rotation, required to make the
Zeeman field point in the local z -direction.29–31 The in-
duced pairing in each dot ∆ind,n exp(iΦn ) is not to be
confused with the p-wave pairing term ∆n exp(iφn ) ap-
pearing in the Kitaev chain Hamiltonian (2.1).
In order for the dot chain to mimic the behavior of the
Kitaev chain in the sweet spot, each dot should have a
single fermion level with zero energy, so that εn = 0. Di-
agonalizing a single dot Hamiltonian yields the condition
(cid:113)
for this to happen:
µn =
When this condition is fulfilled, each dot has two
(cid:17)
(cid:16)(cid:112)Vz − µn c
−iΦn (cid:112)Vz + µn cn↓
fermionic excitations
n↑ − e
†
(cid:16)(cid:112)Vz − µn c
(cid:17)
−iΦn (cid:112)Vz + µn cn↑
†
n↓ + e
The energy of an is zero, the energy of bn is 2Vz . If the
hopping is much smaller than the energy of the excited
ei Φn
2√
2Vz
ei Φn
2√
2Vz
z − ∆2
V 2
ind,n .
. (3.4)
an =
bn =
(3.2)
(3.3)
3
state, wn (cid:28) Vz , we may pro ject the Hamiltonian (3.1)
onto the Hilbert space spanned by an . The resulting
pro jected Hamiltonian is identical to the Kitaev chain
Hamiltonian of Eq. (2.1), with the following effective pa-
rameters:
sin (αn+1 + αn ) cos(δΦn/2)
εn = 0,
(cid:20)
tn eiθn = wn (cos λn + i sin λn cos ρn ) ×
(cid:21)
,
+i cos (αn+1 − αn ) sin(δΦn/2)
(cid:20)
∆n eiφn = iwn sin λn sin ρn eiξn ×
cos (αn+1 + αn ) cos (δΦn/2)
+i sin (αn+1 − αn ) sin (δΦn/2)
where
(cid:21)
,
(3.5a)
(3.5b)
(3.5c)
(3.6)
(3.7)
µn = Vz sin(2αn ), ∆ind,n = Vz cos(2αn ),
λn = λn (sin ρn cos ξn , sin ρn sin ξn , cos ρn )T ,
and δΦn = Φn − Φn+1 .
It is possible to extract most of the parameters of the
dot Hamiltonian from level spectroscopy, and then tune
the effective Kitaev chain Hamiltonian to the sweet spot.
The tuning, however, becomes much simpler if two out
of three of the dot linear dimensions are much smaller
than the spin-orbit coupling length. Then the direction of
spin-orbit coupling does not depend on the dot number,
and as long as the magnetic field is perpendicular to the
spin-orbit field, the phase of the prefactors in Eqs. (3.5)
becomes position-independent. Additionally, if the dot
size is not significantly larger than the spin-orbit length,
the signs of these prefactors are constant. This ensures
that if δΦn = 0, the phase matching condition of the
Kitaev chain is fulfilled. Since δΦn = 0 leads to both tn
and ∆n having a minimum or maximum as a function
of δΦn , this point is straightforward to find. The only
remaining condition, tn = ∆n at δΦ = 0, requires that
αn + αn+1 = λn .
The above calculation leads to the following tuning
algorithm:
1. Open all the QPCs, except for two contacting a
single dot. By measuring conductance while tuning
the gate voltage of a nearby gate, ensure that there
is a resonant level at zero bias. After repeating for
each dot the condition εn = 0 is fulfilled.
2. Open all the QPCs except the ones near a pair of
neighboring dots. Keeping the gate voltages tuned
such that εn = 0, vary the phase difference between
the neighboring superconductors until the lowest
resonant level is at its minimum as a function of
phase difference, and the next excited level at a
maximum. This ensures that the phase tuning con-
dition φn+1 − φn − θn+1 − θn = 0 is fulfilled. Repeat
for every pair of neighboring dots.
3. Start from one end of the chain, and isolate pairs
of dots like in the previous step. In the pair of n-th
and n + 1-st dots tune simultaneously the coupling
of the n + 1-st dot to the superconductor and the
chemical potential in this dot, such that εn+1 stays
equal to 0. Find the values of these parameters such
that a level at zero appears in two dots when they
are coupled. After that proceed to the following
pair.
Having performed the above procedures, the coupling
between all of the dots in the chain is resumed, at which
point we expect the system to be in a robust topological
phase, with two Ma jorana fermions located on the first
and last dots. In practice one can also resume the cou-
pling gradually by, for instance, isolating triplets of adja-
cent dots, making sure they contain a zero-energy state,
and making fine-tuning corrections if necessary, and so
on.
IV. TESTING THE TUNING PROCEDURE BY
NUMERICAL SIMULATIONS
We now test the tuning procedure by applying it to a
numerical simulation of a chain of three QDs in a 2DEG.
The two-dimensional BdG Hamiltonian describing the
(cid:18) p2
(cid:19)
entire system of the QD chain reads:
(σxpy − τz σy px )
α
2m
+ ∆ind (cos(Φ)τy + sin(Φ)τx ) σy + Vz τz σz .
(4.1)
HQDC =
+ V (x, y)
τz +
Here, σi and τi are Pauli matrices acting on the spin and
particle-hole degrees of freedom respectively. The term
V (x, y) describes both potential fluctuations due to dis-
order, and the confinement potential introduced by the
gates. The second term represents Rashba spin-orbit cou-
pling, ∆ind (x, y) · exp (Φ(x, y)) is the s-wave superconduc-
tivity induced by the coupled superconductors, and Vz is
the Zeeman splitting due to the magnetic field. Full de-
scription of the tight-binding equations used in the sim-
ulation is presented in Appendix A.
The chemical potential of the dot levels µn is tuned by
changing the potential V (x, y). For simplicity we used
a constant potential Vn added to the disorder potential,
such that V (x, y) = Vn + V0 (x, y) in each dot. Varying
the magnitude of ∆ind,n is done by changing conductance
G⊥ of the quantum point contacts, which control the
coupling between the dots and the superconductors. Fi-
nally, varying the superconducting phase Φ(x, y) directly
controls the parameter Φn of the dot to which the su-
perconductor is coupled, although they need not be the
same.
4
FIG. 2: Andreev conductance measured from the left lead as a
function of bias voltage and QD potential (measured relative
to quarter filling) for the second dot. Changing the chemical
potential allows to tune quasi-bound states to zero energy
(white circle).
(4.2)
The tuning algorithm required monitoring the energy
levels of different parts of the system. This can be
achieved by measuring the resonant Andreev conduc-
tance from one of the leads. The Andreev conductance
is given by33,34
†
G/G0 = N − Tr(ree r†
ee ) + Tr(rhe r
he ),
where G0 = e2/h, N is the number of modes in a given
lead, and ree and rhe are normal and Andreev reflection
matrices. Accessing parts of the chain (such as a single
dot or a pair of dots) can be done by opening all inter-
dot QPCs, and closing all the ones between dots and
superconductors, except for part of the system that is of
interest.
We begin by finding such widths of QPCs that G(cid:107) ≈
0.02 and G⊥ ≈ 4G0 . This ensures that conductance be-
tween adjacent dots, is in tunneling regime and that the
dots are strongly coupled to the superconductors such
that the effect of Coulomb blockade is reduced.35 The
detailed properties of QPCs are descrbed in App. A and
their conductance is shown in Fig. 8.
First step: tuning chemical potential. We sequentially
isolate each dot, and change the dot potential Vn . The
Andreev conductance as a function of Vn and bias voltage
for the second dot is shown in Fig. 2. We tune Vn to the
value where a conductance resonance exists at zero bias.
This is repeated for each of the dots and ensures that
µn = 0.
Second step: tuning the superconducting phases. We
now set the phases of the induced pairing potentials Φn
to constant. As explained in the previous section, this oc-
curs when ∆n and tn experience their maximal and min-
imal values. According to Eq. (2.3) this happens when
the separation between the energy levels of the pair of
dots subsection is maximal. Fig. 3 shows the evolution
of these levels as a function of the phase difference be-
tween the two superconductors. The condition δΦ1 = 0
is then satisfied at the point where their separation is
5
FIG. 3: Conductance as a function of bias voltage and super-
conducting phase difference for a two-dot system. The two
lowest energy levels are given by Eq. (2.3) of a two site Ki-
taev chain, as indicated. At the point where their separation
is maximal (SC phase difference 0 in the plot), the phase dif-
ference δΦn of the induced superconducting gaps vanishes.
maximal.
Third step: tuning the couplings. Finally we tune tn =
∆n . This is achieved by varying G⊥ , while tracking the
Andreev conductance peak corresponding to the tn − ∆n
eigenvalue of the Kitaev chain we are emulating. After
every change of G⊥ we readjust Vn in order to make sure
that the condition εn = 0 (or equivalently V 2
z = µ2
n +∆2
n )
is maintained. This is necessary because not just ∆n , but
also µn depend on G⊥ . Therefore, successive changes of
G⊥ and Vn are performed until the smallest bias peak is
located at zero bias. The tuning steps of the first two
dots are shown in Fig. 4. We repeat steps 2 and 3 for
each pair of dots in the system.
Finally, having full all three conditions required for
a robust topologically non-trivial phase, we probe the
presence of localized Ma jorana bound state in the full
three-dot system by measuring Andreev conductance (see
Fig. 5). In this specific case, the height of the zero bias
peak is approximately 1.85 G0 , signaling that the end
states are well but not completely decoupled. Increasing
the transparency of the QPC connecting the first dot to
the lead brings this value to G = 1.98 G0 .
V. CONCLUSION
In conclusion, we have demonstrated how to tune a
linear array of quantum dots coupled to superconductors
in presence of Zeeman field and spin-orbit coupling to
resemble the Kitaev chain that hosts Ma jorana bound
states at its ends. Furthermore, we have presented a de-
tailed procedure by which the system is brought to the
so-called “sweet spot” in parameter space, where the Ma-
jorana bound states are the most localized. This proce-
dure involves varying the gates potentials and supercon-
ducting phases, as well as monitoring of the excitation
FIG. 4: Conductance as a function of bias voltage during
simultaneous tuning of G⊥ and Vn for the first pair of dots.
The three different plots represent the situation before (dotted
line), at an intermediate stage (dashed line), and after (solid
line) the tuning. The arrow indicates the evolution of the first
peak upon tuning, and the number of successive changes of
G⊥ and Vn are shown for each curve. By bringing the first
peak to zero, the third tuning step is achieved.
FIG. 5: Conductance as a function of bias voltage for a sys-
tem composed of three tuned quantum dots (dashed line).
The zero bias peak signals the presence of Ma jorana bound
states at the ends of the chain. The first and second excited
states are consistent with those expected for a three-site Ki-
taev chain, namely E1 = 2t1 and E2 = 2t2 (vertical dashed
lines), given the measured values of t1 = ∆1 and t2 = ∆2 ,
obtained after finalizing the two dot tuning process. As de-
scribed in the main text, after increasing the transparency
of the lead QPC leads to a zero bias peak having a height
G = 1.98G0 (solid line).
spectrum of the system by means of resonant Andreev
conductance.
We have tested our procedure using numerical simula-
tions of a system of three QDs, defined in a 2DEG, and
found that it works in systems with experimentally reach-
able parameters. It can be also applied to systems where
6
Quantum point contacts have a longitudinal dimension
of LQPC = 42 nm, which is the same as the Fermi wave-
length at quarter filling.
The value of the hopping integral becomes t =
2 /(2ma2 ) = 55.8 meV, with a = 7 nm. Disorder
is introduced in the form of random uncorrelated on-
site potential fluctuations, leading to a mean free path
lmfp = 218.8 nm. The system is placed in a perpendic-
ular magnetic field characterized by a Zeeman splitting
Vz = 336 µeV, which, given a g -factor of 35K/T , cor-
responds to a magnetic field Bz = 111 mT. Each dot is
additionally connected to a superconductor characterized
by a pairing potential ∆SC = 0.86 meV.
The potential profile across a quantum point contact
(cid:18)
(cid:19)(cid:19)
(cid:18) (cid:101)s(cid:101)L
(cid:18)
(cid:101)h
is given by
x + (cid:101)w
(cid:18)
(cid:19)(cid:19)(cid:19)
(cid:18) (cid:101)s(cid:101)L
2 − tanh
x − (cid:101)w
2
2
,
(A1)
+ tanh
2
where x ∈ [− (cid:101)L/2, (cid:101)L/2] is the transverse coordinate across
the quantum point contact, (cid:101)h is the maximum height of
VQPC , (cid:101)s fixes the slope at which the potential changes,
and (cid:101)w is used to tune the QPC transparency. Two ex-
amples of potential profiles are shown in Fig. 7.
VQPC (x) =
FIG. 7: Potential profile VQPC (x) across the transverse direc-
tion of a quantum point contact. For the maximum value of
this potential, no states are available for quasiparticles in the
QPC transparencies, corresponding to (cid:101)s = 17 and (cid:101)w = 87.4,
2DEG. The two curves show potential profiles for two different
39.5 nm for the solid and dashed curves respectively.
FIG. 6: Geometry of the quantum dot chain. The quantum
dots have a width WDOT and length equal to LDOT . Quantum
point contacts have a longitudinal size LQPC and a transverse
dimension equal to either LDOT or WDOT . Leads are semi-
infinite in the x direction, and superconductors are modeled
as semi-infinite systems in the y direction.
quantum dots are defined by other means, for example
formed in a one-dimensional InAs or InSb wire.
Acknowledgments
The numerical calculations were performed using the
kwant package developed by A. R. Akhmerov, C. W.
Groth, X. Waintal, and M. Wimmer. We would like to
acknowledge discussions with J. Alicea, L. P. Kouwen-
hoven, C. M. Marcus, F. von Oppen, and J. D. Sau.
We are grateful for partial support by SPP 1285 of
the Deutsche Forschungsgmeinschaft (YO), for grants
of ISF and TAMU (YO), to the Dutch Science Foun-
dation NWO/FOM and an ERC Advanced Investigator
Grant (ICF and AA). AA was partially supported by a
Lawrence Golub Fellowship.
Appendix A: System parameters in numerical
simulations
In this section, we describe the parameters used
throughout the numerical simulations. The quantum
dots and quantum point contacts are modeled using a
tight-binding model defined on a square lattice, with
leads and superconductors taken as semi-infinite.
The characteristic length and energy scales of this sys-
tem are the spin-orbit length lSO = 2/mα, and the spin-
orbit energy ESO = mα2/2 . We simulate an InAs sys-
tem in which the effective electron mass is m = 0.015me ,
where me is the bare electron mass, taking values of
ESO = 1 K = 86 µeV and lSO = 250 nm.
We consider a setup composed of three quantum dots,
like the one shown in Fig. 6. Each of the three dots has a
length of LDOT = 208 nm and a width WDOT = 104 nm.
1 J. Alicea, Rep. Prog. Phys. 75, 076501 (2012).
2 C. W. J. Beenakker, arXiv:1112.1950 (2011).
3 J. D. Sau, R. M. Lutchyn, S. Tewari, and S. Das Sarma,
Phys. Rev. Lett. 104, 040502 (2010).
4 R. M. Lutchyn, J. D. Sau and S. Das Sarma, Phys. Rev.
Lett. 105, 077001 (2010).
5 Y. Oreg, G. Refael and F. Von Oppen, Phys. Rev. Lett.
105, 177002 (2010)
7
14 K. Flensberg, Phys. Rev. B 82, 180516(R) (2010).
15 G. Kells, D. Meidan, and P. W. Brouwer, Phys. Rev. B 85,
060507(R) (2012).
16 S. Tewari, T. D. Stanescu, J. D. Sau, and S. Das Sarma,
Phys. Rev. B 86, 024504 (2012).
17 F. Pientka, G. Kells, A. Romito, P. W. Brouwer, and F.
von Oppen, arXiv:1206.0723.
18 J. Liu, A. C. Potter, K. T. Law, and P. A. Lee,
arXiv:1206.1276.
19 P. W. Anderson, J. Phys. Chem. Solids 11, 26 (1959).
20 A. C. Potter and P. A. Lee, Phys. Rev. Lett. 105, 227003
(2010).
21 T. D. Stanescu, R. M. Lutchyn, and S. Das Sarma, Phys.
Rev. B 84, 144522 (2011).
22 P. W. Brouwer, M. Duckheim, A. Romito and F. von Op-
pen, Phys. Rev. Lett. 107, 196804 (2011).
23 M.-T. Rieder, G. Kells, M. Duckheim, D. Meidan, and P.
W. Brouwer, Phys. Rev. B 86, 125423 (2012).
24 M. Wimmer, A.R. Akhmerov, J.P. Dahlhaus, C.W.J.
Beenakker, New J. Phys. 13, 053016 (2011).
25 A. Yu. Kitaev, Phys.-Usp. 44, 131 (2001).
26 J. D. Sau, S. Das Sarma, Nat. Comm. 3, 964 (2012).
27 J. Alicea, Y. Oreg, G. Refael, F. Von Oppen, M. P. A.
Fisher, Nat. Phys. 7, 412 (2011).
28 J. D. Sau, D. J. Clarke, S. Tewari, Phys. Rev. B 84, 094505
(2011).
29 T.-P. Choy, J. M. Edge, A. R. Akhmerov, C. W. J.
Beenakker, Phys. Rev. B 84, 195442 (2011).
30 M. Kjaergaard, K. Wolms, K. Flensberg, Phys. Rev. B 85,
020503(R) (2012).
31 B. Braunecker, G. I. Japaridze, J. Klinova ja, D. Loss,
Phys. Rev. B 82, 045127 (2010).
32 Q.-F. Sun, J. Wang, H. Guo, Phys. Rev. B 71, 165310
(2005).
33 A. L. Shelankov, Zh. Eksp. Teor. Fiz., Pisma. 32, 2, 122-
125 (1980).
34 G. E. Blonder, M. Tinkham, and T. M. Klapwijk, Phys.
Rev. B 25, 4515 (1982).
35 H. Grabert and M. H. Devoret, Single Charge Tunnel-
ing: Coulomb Blockade Phenomena in Nanostructures
(Plenum, New York, 1992)
of (cid:101)w of Eq. (A1), for a single QPC. The vertical lines indicate
FIG. 8: Conductance of a quantum point contact as a function
the values at which QPCs are set after tuning. The inter-
dot QPCs are all set to the tunneling regime while the ones
connecting the dots to the superconductors are set to higher
transparencies.
6 V. Mourik, K. Zuo, S. M. Frolov, S. R. Plissard, E. P. A.
M. Bakkers, and L. P. Kouwenhoven, Science 336, 1003
(2012).
7 M. T. Deng, C. L. Yu, G. Y. Huang, M. Larsson, P. Caroff,
and H. Q. Xu, arXiv:1204.4130.
8 A. Das, Y. Ronen, Y. Most, Y. Oreg, M. Heiblum, and H.
Shtrikman, arXiv:1205.7073.
9 L. P. Rokhinson, X. Liu,
arXiv:1204.4212 (2012).
10 C. J. Bolech and E. Demler, Phys. Rev. Lett. 98, 237002
(2007).
11 K. T. Law, P. A. Lee, and T. K. Ng, Phys. Rev. Lett. 103,
237001 (2009).
12 S. Sasaki, S. De Franceschi, J. M. Elzerman, W. G. van der
Wiel, M. Eto, S. Tarucha, and L. P. Kouwenhoven, Nature
405, 764 (2000).
13 D. I. Pikulin, J. P. Dahlhaus, M. Wimmer, H. Schomerus,
and C. W. J. Beenakker, arXiv:1206.6687.
and J. K. Furdyna,
|
1810.00426 | 1 | 1810 | 2018-09-30T17:19:56 | Non-Born effects in scattering of electrons in a clean conducting tube | [
"cond-mat.mes-hall"
] | Quasi-one-dimensional systems demonstrate Van Hove singularities in the density of states $\nu_F$ and the resistivity $\rho$, occurring when the Fermi level $E$ crosses a bottom $E_N$ of some subband of transverse quantization. We demonstrate that the character of smearing of the singularities crucially depends on the concentration of impurities. There is a crossover concentration $n_c\propto |\lambda|$, $\lambda\ll 1$ being the dimensionless amplitude of scattering. For $n\gg n_c$ the singularities are simply rounded at $\varepsilon\equiv E-E_N\sim \tau^{-1}$ -- the Born scattering rate. For $n\ll n_c$ the non-Born effects in scattering become essential despite $\lambda\ll 1$. The peak of the resistivity is asymmetrically split in a Fano-resonance manner (however with a more complex structure). Namely, for $\varepsilon>0$ there is a broad maximum at $\varepsilon\propto \lambda^2$ while for $\varepsilon<0$ there is a deep minimum at $|\varepsilon|\propto n^2\ll \lambda^2$. The behaviour of $\rho$ below the minimum depends on the sign of $\lambda$. In case of repulsion $\rho$ monotonically grows with $|\varepsilon|$ and saturates for $|\varepsilon|\gg \lambda^2$. In case of attraction $\rho$ has sharp maximum at $|\varepsilon|\propto \lambda^2$. The latter feature is due to resonant scattering by quasistationary bound states that inevitably arise just below the bottom of each subband for any attracting impurity. | cond-mat.mes-hall | cond-mat | Non-Born effects in scattering of electrons in a clean conducting tube
Condensed-matter physics laboratory, National Research University Higher School of Economics, Moscow 101000, Russia, and
L. D. Landau Institute for Theoretical Physics, Moscow 119334, Russia
A.S. Ioselevich∗
N.S.Pescherenko†
Moscow Institute of Physics and Technology, Moscow 141700, Russia and
Skolkovo Institute of Science and Technology, Moscow 121205, Russia
(Dated: October 2, 2018)
Quasi-one-dimensional systems demonstrate Van Hove singularities in the density of states νF
and the resistivity ρ, occurring when the Fermi level E crosses a bottom EN of some subband
of transverse quantization. We demonstrate that the character of smearing of the singularities
crucially depends on the concentration of impurities. There is a crossover concentration nc ∝ λ,
λ (cid:28) 1 being the dimensionless amplitude of scattering. For n (cid:29) nc the singularities are simply
rounded at ε ≡ E − EN ∼ τ−1 -- the Born scattering rate. For n (cid:28) nc the non-Born effects in
scattering become essential despite λ (cid:28) 1. The peak of the resistivity is asymmetrically split in
a Fano-resonance manner (however with a more complex structure). Namely, for ε > 0 there is a
broad maximum at ε ∝ λ2 while for ε < 0 there is a deep minimum at ε ∝ n2 (cid:28) λ2. The behaviour
of ρ below the minimum depends on the sign of λ. In case of repulsion ρ monotonically grows with
ε and saturates for ε (cid:29) λ2. In case of attraction ρ has sharp maximum at ε ∝ λ2. The latter
feature is due to resonant scattering by quasistationary bound states that inevitably arise just below
the bottom of each subband for any attracting impurity.
I.
INTRODUCTION
In this study we consider clean multichannel quasi-one-
dimensional metallic systems: wires, tubes, strips etc.
We revisit a seemingly well-understood problem of semi-
classical (i.e. without localization effects) resistivity for
such systems in the presence of weak short-range impu-
rities at low concentration.
It is well known, that this
resistivity (as well as the density of states at the Fermi
level) has a square-root Van Hove singularities as a func-
tion of the Fermi level position E, occurring when E
crosses a bottom EN of certain subband of transverse
quantization1. These singularities are expected to be
smeared due to scattering of electrons by impurities and
(at least in the Born approximation) the width of the
peak ΓB ∼ τ−1
min can be estimated as an electronic scat-
tering rate at maximum of resistivity. This smearing was
theoretically studied within the self-consistent Born ap-
proximation by different groups of authors2 -- 5,7,8.
We demonstrate that the above picture is valid only
if the concentration of impurities is relatively high while
for low concentration due to specifics of the quasi-one-
dimensional systems the non-Born effects become essen-
tial despite the nominal weakness of scattering. These
effects lead to dramatic restructuring of the Van Hove
singularities.
Complex asymmetric features were experimentally ob-
served in many quasi-one-dimensional systems, such as
nanotubes (both single-wall9,10 and multi-wall11,12 ones).
∗e-mail: iossel@itp.ac.ru
†e-mail: peshcherenko@phystech.edu
These features were attributed to Fano resonance13, aris-
ing due to interference of the scattering at some narrow
resonant state with the scattering at background con-
tinuum. The E-dependence of resistivity ρ at the Fano
resonance is usually described by the formula
ρ(E) ∝ (E − EN + qΓ/2)2
(E − EN )2 + (Γ/2)2
(1)
with phenomenological parameters q and Γ (see, e.g.,14).
There were attempts9 -- 11 to fit the experimental data on
the Van Hove singularities in nanotubes with the for-
mula (1) with an appropriate choice of Γ and q. We will
show, however, that this phenomenological expression is
not sufficient to describe the entire zoo of possible ρ(E)
shapes. In this paper we will give a microscopic deriva-
tion of the actual ρ(E) dependence. The main ingredient
of our theory is the non-Born effects in scattering.
A. Statement of the problem
In this paper we restrict our consideration to only
one simple realization of quasi-one-dimensional system:
a single-wall metallic tube in a strong longitudinal mag-
netic field. The zero (or weak) field case is more difficult
for theoretical study because of the chiral degeneracy of
the electronic states that is only lifted due to an inter-
action with an impurity. Other quasi-one-dimensional
variants such as a conducting strip involve some addi-
tional complications due to nonequivalence of positions
of different impurities with respect to the nodes of the
wave function. All these effects are quite interesting and
they will be discussed elsewhere.
8
1
0
2
p
e
S
0
3
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
6
2
4
0
0
.
0
1
8
1
:
v
i
X
r
a
Besides the simplicity of the theoretical interpretation
the case of strong magnetic field is convenient practically
since the changing of magnetic field is an effective in-
strument for tuning the distance E − EN , so it is easy to
sweep the Van Hove singularity in a controllable way.
2
Oscillations of the longitudinal resistivity with the
magnetic flux Φ threading the tube is a well known ef-
fect that was experimentally observed in various tubes
and wires (especially semimetallic)15 -- 17. These oscilla-
tions are the direct manifestation of the Aharonov-Bohm
effect18 -- the interference of electronic waves with oppo-
site chiralities. From the semiclassical point of view it is
instructive to write the resistivity ρ in the form of Fourier
series:
(cid:32)
∞(cid:88)
(cid:33)
ρ = ρ0
1 +
An cos(πnΦ/Φ0)
(2)
n=1
where Φ0 = πc/e = ch/2e is the flux quantum. The
oscillations can be observed in both dirty and clean sys-
tems. As it was shown in a seminal paper by Altshuler,
Aronov and Spivak19 in dirty (diffusive) systems the odd-
n harmonics of the Aharonov-Bohm oscillations (2) are
washed out due to strong variations in the length of dif-
ferent diffusive trajectories that lead to randomisation of
the non-magnetic part of the phases of electronic wave-
functions. The even-n harmonics -- the oscillations asso-
ciated with a special sort of trajectories (the ones contain-
ing closed topologically non-trivial loops on the cylinder)
survive the randomisation. This effect was observed in
experiments (see20,21). The odd-n harmonics are in gen-
eral very fragile: they may be suppressed also in nomi-
nally clean systems17 due to the fluctuations of the tube's
parameters: e.g., the radius22. The even-n harmonics are
less fragile but still, in the presence of any kind of disor-
der the amplitudes An rapidly decrease with n so that the
oscillations in the imperfect systems usually look roughly
harmonic.
It is not the case for the geometrically perfect clean
systems where An decrease with n only as n−1/2 so that
the series diverges at Φ → 2M Φ0 with integer M . This
divergency is nothing else but the Van Hove singularity
(see, e.g.,22). So, the shape of oscillations is very different
for perfect and for imperfect systems (see Fig.1).
It this work we concentrate on geometrically perfect
tubes with low concentration of weak short-range impu-
rities, where one can expect strongly unharmonic oscilla-
tions dominated by the Van Hove singularities as in the
upper panel of Fig.1.
Thus, we consider a single-wall tube of radius R
threaded by magnetic flux Φ. The tube is supposed to
be cut from a sheet of two-dimensional metal with simple
quadratic spectrum23 of electrons E = 2k2/2m∗. Im-
purities are embedded in this sheet with two-dimensional
concentration n2. They are supposed to be short-range
and weakly scattering ones.
FIG. 1: ρ(Φ) dependence for clean and dirty cases. Top: clean
case, ρ(Φ) is periodic with a period 2Φ0 and Van Hove square
root singularities are present for Φ = 2nΦ0. Bottom: dirty
case, ρ(Φ) is periodic with a period Φ0 - odd harmonics are
suppressed.
B. Principal approximations
It is convenient to measure all the energies in the units
of E0 = 2/2m∗R2 and we will assume the semiclassical
condition throughout this paper:
ε0 (cid:29) 1,
ε0 ≡ E/E0, N ∼ ε1/2
0 (cid:29) 1.
(3)
where N is the label of a subband whose bottom is the
closest to the Fermi level and has the meaning of the
number of open channels in the system.
The magnetic field is assumed to be strong enough so
√
that the splitting between EN and E−N is larger than the
ε0
width of the peaks Γ. Besides that, the parameter 2
√
should not be close to any integer K to avoid resonance
between the subbands with m = N and m(cid:48) = N ± 2
ε0.
All the interesting effects associated with the Van Hove
singularities occur in the range where
ε (cid:28) 1,
ε ≡ (E − EN )/E0.
(4)
There are two important dimensionless small parame-
ters in this problem:
(i) The dimensionless concentration of impurities
n ≡ n2(2πR)2,
n (cid:28) 1.
(5)
It is assumed to be small which in particular means that
the average distance between impurities is larger than
the transverse size of the system.
(ii) Dimensionless scattering amplitude
Λ2d = λ − iλ2
(6)
of the background two-dimensional problem (λ > 0 cor-
responds to repulsion, λ < 0 -- to attraction). It is also
supposed to be small:
λ (cid:28) 1.
(7)
The imaginary part of complex Λ2d in (6) is necessary to
fulfil the unitarity requirement24 (the optical theorem):
Im Λ2d = −Λ2d2.
(8)
Actually we will need this imaginary part only for proper
treatment of quasistationary states arising in the case of
attracting λ < 0. In all other cases we can simply put
Λ2d → λ.
(iii) The third condition is imposed on the length L of
the tube: it should satisfy the inequality
l(ε) (cid:28) L (cid:28) Lloc(ε),
(9)
where l(ε) is the mean free path and Lloc ∼ N l(ε) is the
localization length. The large parameter N (cid:29) 1 assures
at least the possibility for inequality (9) to be fulfilled.
Indeed, it is very well known that weak localization
effects in quasi-one-dimensional systems lead (in the ab-
sence of inelastic processes) to an ultimate localization on
all electronic states. However, for the tubes with lengths
L in the range (9) the localization corrections are still
small so that the results obtained throughout this paper
are well justified and should give a valid expressions for
the resistivity ρ(ε). Moreover, these results provide a
possibility to estimate the dependence of the localization
length on the parameter ε:
Lloc(ε) =(cid:2)e2ρ(ε)(cid:3)−1
3
approximation. In particular we demonstrate that in this
approximation the resistivity vanishes exactly at the Van
Hove singularity. In Section VII we estimate the effects
of interference between scattering events at different im-
purities, resolve the zero-resistivity paradox of the pre-
ceeding section and estimate the minimal resistivity. In
Section VIII we discuss the inhomogeneous broadening
of the peaks in the resistivity that arise due to resonant
scattering at quasistationqry states.
In Section IX we
explore the effects that should arise if impurity with dif-
ferent effective scattering amplitudes are present in the
system. In Section X we summarize the results and out-
line the directions of future research. In the Appendices
A and B we evaluate the behaviour of the system in the
immediate vicinity of the Van Hove singularity (where
the single-impurity approximation breaks down) using
the self-consistent approximation and explain the effect
of a "catastrophic drop" (almost a jump!) of resistivity
just below the smeared singularity.
II. THE PRINCIPAL RESULTS
The number of physical scenarios and distinct ranges of
parameters considered in this paper is large. Therefore
we find it reasonable to start with the list of different
regimes and principal results.
A. The Born approximation
Away from the Van Hove singularities (at ε (cid:29) 1) the
applicability of the Born approximation requires only the
condition (7). Here the system behaves simply as a classic
piece of the background two-dimensional material. The
density of states, the resistivity and the scattering rate
(the latter is being measured in units of E0) are
(cid:18) λ
(cid:19)2
.
(10)
ν0 = m∗R,
ρ0 =
1
e2ε0
1
τ0
,
1
τ0
= 2n
π
.
(11)
C. The structure of the paper
The structure of the paper is as follows: In Section II
we bring together all the principal results of the paper. In
Section III we briefly remind the well-known facts about
quantum mechanics of an electron on a tube threaded by
magnetic field. In Section IV we discuss the scattering of
electrons near the Van Hove singularity within the Born
approximation.
In Section V we discuss the non-Born
effects for scattering of electrons in the cylinder geome-
try and derive the corresponding renormalization of the
scattering amplitude. In the case of attracting potential
we find the poles in the scattering matrix that are related
to quasistationary states under the bottom of each sub-
band.
In Section VI we consider the manifestations of
the non-Born effects in resistivity in the single-impurity
In all cases the main contribution to the current comes
from the one-dimensional subbands with labels m that
are not very close to N because for m ≈ N the longitu-
dinal velocity of electrons with energy E tends to zero.
However, the role of the N -band becomes very important
near the singularity when E → EN . Indeed, when the
total density of states
(cid:18)
(cid:19)
√
θ(ε)
ε
π
ν(ε) = ν0
1 +
,
(12)
is dominated by the second term (the contribution of
the resonant N -band), the electrons from the current-
carrying bands (those with labels m ∼ N/2) are scat-
tered predominantly to the resonant one (with m = N ).
Near the singularity the properties of electrons from the
resonant band differ from the properties of all others. For
a general quasi-one-dimensional system there are in prin-
ciple two distinct scattering amplitudes and correspond-
ing rates: λ1 and τ−1
1 (ε) describe the scattering from
the current-carrying bands to the resonant one while λ2
and τ−1
2 (ε) correspond to scattering within the resonant
band. The rate τ−1
1 (ε) directly determines the mean free
path and the resistivity
ρ(ε) =
1
1
e2ε0
τ1(ε)
=
1
e2N l(ε)
,
l(ε) = N τ1(ε),
(13)
where we have used the obvious relations l ∼ vF τ and
vF ∼ E1/2 ∼ N . The rate τ−1
2 (ε) is responsible for
smearing of the singularity in the density of states and is
relevant only in the immediate vicinity of the singularity.
However, we show in Section IV that for the case of a
tube
τ2(ε) = τ1(ε) ≡ τ.
(14)
We will show, that close to the singularity the Born ap-
proximation remains valid only if the dimensionless con-
centration n of impurities is relatively high.
Let us first assume that this condition is fulfilled and
estimate the width of the smeared Van Hove singularity.
The scattering rate is proportional to the density of final
states so that
From (19) it is clear that the energy scale
εnB = (λ/π)2 (cid:28) 1,
4
(20)
measures the range near the singularity where the non-
Born effects are considerable. In particular, we see that
if, due to low concentration of impurities, the Born scat-
tering rate is low enough:
ΓB < εnB,
(21)
then the non-Born effcts have chance to come into play
in the range Γ < ε < εnB. Substituting the explicit
formulas (17) and (20) to the condition (21), we arrive
at the criterion
n < nc,
nc = λ/π.
(22)
of the breakdown of the Born approximation in the vicin-
ity of the singularity. Under the opposite condition the
Born approximation is sufficient for all ε.
It is convenient to rewrite (19) in the form
λ → Λ() ≈
λ
1 − [sign(λ) − iλ](−)−1/2
,
≡ ε
εnB
.
(23)
1
τ1(ε)
=
1
τ0
ν(ε)
ν0
.
C. The non-Born effects in resistivity: repulsing
(15)
impurities
The width ΓB of the peak in the density of states (and in
the resistivity at the same time) may be estimated from
the condition
τ−1
1
(ε ∼ ΓB) ∼ ΓB.
(16)
As a result, the Van Hove singularity is smeared on the
scale ε ∼ ΓB
(cid:17)2/3(cid:18) λ
ΓB ∼(cid:16) n
(cid:17)2/3(cid:18) λ
(cid:16) n
π
π
(cid:19)4/3 (cid:29) 1
(cid:19)4/3 (cid:29) ρ0.
τ0
,
π
π
B ∼ 1
ρmax
e2ε0
At low concentration of impurities n (cid:28) nc the shape of
the ρ() dependence in the vicinity of Van Hove singulari-
ties is strongly modified by non-Born effects in scattering.
A narrow peak at = 0 is replaced by a broad one
slightly above the bottom -- with the maximum at ∼ 1
nB ∼ εnB, independent of the concen-
and the width Γ(+)
tration n. The shape of this broad peak can be found
(cid:16) n
explicitly:
(cid:17)(cid:18) λ
(cid:19)
1
F (),
≡ ε/εnB,
(24)
= 2
π
π
τ (ε)
(17)
(18)
F () = (1/2 + −1/2)−1
The maximal (in the range ε > 0) resistivity
(cid:16) n
(cid:17)(cid:18) λ
(cid:19)
π
π
(25)
(26)
B. The origin of non-Born effects
ρmax(+)
nB
∼ 2
e2ε0
Fmax (cid:28) ρmax
B ,
The origin of the special importance of non-Born ef-
fects in quasi-one-dimensional systems is renormalization
of the scattering matrix that is dramatically enhanced
near a Van Hove singularity. In the case of tube this ma-
trix can be effectively reduced to a single complex con-
stant Λ(ε) that can be found from the Dyson equation.
As a result
(cid:26)
(cid:27)−1
λ → Λ(ε) ≈ λ
√
1 − Λ2d
ε
π
(19)
is reached at = max, where
max = 1
Fmax = 1/2,
(27)
The function F () is shown in Fig. 2. At (cid:29) 1 it has
asymptotics F () ≈ −1/2 that corresponds to the stan-
dard Van Hove singularity. The height of the broad peak
is much less than it would be within the Born approx-
imation but still is much higher than the background
resistivity ρ0.
5
It can be shown that, besides the true bound state with
the energy below the bottom of the lowest subband of the
electronic spectrum of the cylinder, a weakly attracting
short-range impurity produces an infinite series of qua-
sistationary states: one such state below the bottom of
each band. In this paper we concentrate on the quasista-
tionary states associated with the quasiclassic subbands
(those, with large N (cid:29) 1). In particular we show that
for λ < 0 the scattering amplitude (23) has a pole at
= −1 + 2iλ (or at ε = (−1 + 2iλ)εnB in other nota-
tion). This pole corresponds to a quasistationary state
with a relatively small decay rate. In the case of cylin-
der these poles are identical for all impurities and, since
electrons can be scattered by these resonances, the latter
lead to formation of sharp maxima in resistivity for ε < 0
and λ < 0:
F () ≈
1
(1 − −1/2)2
for 1 − (cid:29) λ,
,
4
(1 − )2 + 4λ2 ,
for 1 − (cid:46) λ,
(31)
This result is illustrated by Fig. 3:
FIG. 3: The same as in Fig. 2 but for attracting impurities.
The sharp maximum at < 0 arises due to resonant scattering
at quasistationary states.
The maximal (in the range < 0) resistivity is reached
at = −1,
(32)
ρmax(−)
∼ 1
e2ε0
the width of this maximum is Γ(−)
nB
2n
π2 ,
nB = 4λεnB.
The physical origin of the quasistationary states that
exist slightly below each of the subbands is as follows.
Semiclassical trajectories of electrons with energies near
the bottom of subband are almost closed; if an electron
with such energy has passed near certain impurity once
then it will do so again, and many times. Therefore
the attraction to impurity is strongly enhanced and the
bound state is formed. An alternative way of thinking is
just to neglect in the leading approximation all the tran-
sitions from the resonant band to all others. The arising
strictly one-dimensional problem grants a bound state
FIG. 2: Dependence of the resistivity on the position of the
Fermi level for repulsing impurities in the case of strong non-
Born regime low concentration of impurities n (cid:28) nc. Note
that ρ() vanishes as → 0:
it is an artefact of the single-
impurity approximation that is not applicable at (cid:46) min (cid:28)
1. The horizontal asymptote (dashed line) corresponds to
ρ = ρ0.
The behaviour of the resistivity above the Van Hove
singularity (for ε > 0), described by (24), does not de-
pend on the sign of λ, it is the same for attracting and
repulsing impurities. It is not the case for the range ε < 0
below the singularity. For repulsing impurities we obtain
(cid:16) n
(cid:17)(cid:18) λ
(cid:19)2
π
π
1
τ (ε)
= 2π
F (),
(28)
F () = [1 + (−)−1/2]−2,
(29)
so that ρ(ε) monotonically increases with ε and satu-
rates at ρ = ρ0.
It is easy to see that, as it formally follows from (29),
the resistivity ρ(ε) should vanish for ε → 0 from either
side. Indeed, for (cid:28) 1
F () ≈ 1/2
F () ≈ −.
(30)
Of course we immediately suspect that in reality the
decrease of resistivity will be ultimately stopped by some
additional effect (and this is indeed so, see below). But
anyway, a dramatic suppression of resistivity in the nar-
row vicinity of the Van Hove point is an important phe-
nomenon. Physically it is a result of destructive inter-
ference of partial electronic waves with different winding
numbers.
D. Attracting impurities, quasistationary states
and resonant scattering
As we have already mentioned in previous section, the
behaviour of resistivity above the singularity is identical
for repulsing and attracting impurities. However, below
the singularity the attracting impurities introduce some
nice additional physics.
for arbitrary weak attraction. Taking the transitions to
nonresonant bands into account perturbatively leads to
the finite decay rate of the state.
E. The minimum of resistivity
6
All the effects described above are the single impurity
ones. Their origin is the coherent multiple scattering
by the same impurity which fact is manifested in the
linear dependence of resistivity on the concentration n.
To reveal the mechanism that limits the suppression of
resistivity at → 0 and to estimate the resistivity at its
minimum one has to find the scattering rate τ−1(ε) from
(28) in the range ε (cid:28) εnB:
(cid:18)
(cid:19)
= ε
τ0
τ (ε)
1 +
λ√
θ(ε)
ε
FIG. 4: Thin conducting tube, threaded by magnetic field
H.
Impurities (shown as stars) are embedded in the tube.
Electrons live on the surface of the cylinder.
(33)
Em = E0(m + Φ/2Φ0)2, E0 =
2
2m∗R2
(40)
where m ∈ Z is the azymuthal quantum number, k is the
momentum along the cylinders axis and Φ0 = πc/e =
ch/2e is the flux quantum. Em has the meaning of po-
sition of the bottom of m-th one-dimensional subband.
Actually we have introduced the magnetic field as a tool
of easy shifting of the Fermi level in the system but all
the physics described below is present already in the case
H = 0.
The density of states in each subband
(cid:19)
=
(cid:18)
δ
(cid:90) dk
(cid:115)
2π
2
2π
E − Em − k2
2m∗
m∗
2(E − Em)
θ(E − Em),
(41)
νm(E) =
=
The factor 2 arises because the equation E−Em− k2
0 has two roots k = ±(cid:112)2m∗(E − Em).
2m∗ =
The width ΓnB of the peak in the density of states can
be estimated from the condition
ΓnB ∼ τ−1 (ε ∼ +ΓnB) ,
and we get
ΓnB ∼ εmin ≡ (n/π)2 (cid:28) εnB.
(34)
(35)
Note that this width does not depend on λ. At ε < 0
the resonant contribution to the density of states rapidly
drops on the same energy scale so that the factor ν(ε)
becomes of order of ν0 already at ε ∼ −εmin. As a result,
the resistivity has a minimum at ε = εdip, where
εdip < 0,
εdip ∼ εmin.
(36)
The scattering rate and the resistivity at minimum are
∼ n3,
1
τdip
ρdip ∼ n3
e2ε0
,
(37)
and do not depend on the scattering amplitude λ. Thus,
there is a deep and narrow universal minimum of resis-
tivity slightly below the bare Van Hove singularity, the
resistivity in the minimum depends on n superlinearly.
III. AN IDEAL TUBE
We consider a tube of radius R threaded by a magnetic
flux Φ = πR2H (the magnetic field H is oriented along
the axis of a cylinder z).
Electrons in the tube have the following spectrum and
wave functions:
ψmk(φ, z) = (2π)−1/2 exp{ikz + imφ},
Emk =
2k2
2m∗ + Em,
(38)
(39)
FIG. 5: Spectrum of an electron on a surface of an ideal
cylinder. Subbands of the transverse quantization are shown.
The Fermi level E crosses all the subbands with m ≤ N .
The total density of states
ν(E) =
Im g(E),
(42)
νm(E) = − 1
π
g(E) ≡ G(0)
E (0, 0) =
(cid:88)
(cid:90) dk
(cid:88)
(cid:88)
2π
m
m
=
m
1
E − Ekm + i0
=
(cid:115)
m∗
2(Em − E)
,
(43)
G(0)
E (0, 0) being the one-point retarded Green function
of an ideal wire. Strictly speaking, the real part of g
diverges. The recipe how to deal with this divergency will
be discussed somewhat later. Now we just mention that
the divergent part is energy-independent and therefore
can be removed by a constant shift of the energy.
In the main part of this paper we will measure all en-
ergies in the units of E0 and all distances in the units of
2πR:
E ≡ E0ε0, E − Em ≡ E0εm,
νm(ε) =
1√
εm
θ(εm),
g(ε) =
(cid:88)
m
νm(E) ≡ νm(ε)
2πRE0
,
(44)
π√−εm
.
(45)
We are interested in semiclassical case when E0 (cid:28) E or
ε (cid:29) 1. Then, in the leading semiclassical approximation
∞(cid:88)
m=−∞
ν(ε) =
νm(ε) ≈ ν0 =
(cid:90) ε0
0
(cid:112)εm(ε0 − εm)
dεm
= π.
(46)
This result is valid for all ε except narrow intervals in the
vicinity of points where εm = 0 for some m.
The condition of strong magnetic field reads
εN − ε−N ∼ √
ε0Φ/Φ0 (cid:29) Γ,
where Γ is the broadening of peaks and N =
the closest to Fermi level E subband.
√
(47)
ε0 denotes
In the entire range of variation of one can write
(cid:18)
(cid:19)
ν(0)(ε) ≈ ν0
1 +
√
θ(ε)
π
ε
where we have introduced ε ≡ εN for brevity.
Under the semiclassical condition N (cid:29) 1 the result
(46) is not valid in the vicinity of the Van Hove singularity
for ε (cid:46) 1 where the second -- resonant -- term in (48) is
anomalously large. We see that for
ε (cid:28) 1
(49)
the inequality νN (ε) (cid:29) ν0 holds: the density of states
is indeed dominated by the second term in (48) -- the
contribution of the N -subband. Note that in the semi-
classical limit N (cid:29) 1 the different peaks in the function
ν(ε) are strictly identical.
ε > 0,
7
IV. BORN SCATTERING BY SHORT-RANGE
IMPURITIES
Our first step is finding the longitudinal resistivity of
the tube using the Drude and Born approximations. We
consider weak short range impurities with the hamilto-
nian
H = H0 + V δ(r − r0),
H0 = −∇2/2m∗
(50)
where δ(r) ≡ 1
R δ(z − z0)δ(φ − φ0) is a two-dimensional
delta-function and r0 denotes the position of the impurity
on the wall of the tube. Let us find the self-energy for an
electron
(cid:90) dk(cid:48)
(cid:88)
2πRn(2)
imp
Σkm =
E0
m(cid:48)
2π
Vkk(cid:48)mm(cid:48)2G(0)
k(cid:48)m(cid:48)
(51)
Since for the short range potential (50)
V
2πR
exp{i(m − m(cid:48))φ0 + i(k − k(cid:48))z0},
Vkk(cid:48)mm(cid:48) =
Vkk(cid:48)mm(cid:48)2 ≡ V 2 depends neither on km, nor on k(cid:48)m(cid:48),
we conclude that Σkm = Σ(Ekm) is a function of only the
total energy E. In our dimensionless variables we get:
(52)
Σ(ε) =
g(ε)
2πν0τ0
,
(53)
where τ0 is the dimensionless scattering time for an elec-
tron away from the resonance (i.e., for ε (cid:29) 1):
τ−1
0 =
m∗V 2n2
E0
= 2n(λ/π)2,
(54)
the dimensionless Born scattering amplitude
λ = m∗V /2,
λ (cid:28) 1,
(55)
is assumed to be small and may have either signs (the
positive sign corresponds to repulsion, the negative -- to
attraction). The dimensionless concentration n is also
assumed small.
1
τk,m
=
1
τ (Ekm)
= −2Im Σ =
1
τ0
ν(ε)
ν0
.
(56)
For point impurities the scattering is isotropic and there-
fore the transport time coincides with the simple decay
time.
Thus, if (49) is fulfilled, the particle is scattered pre-
dominantly (though not completely) to the upper band.
In particular, if the particle was already in the upper sub-
band then the scattering event most probably will not
remove it from there. It means that in the zero approx-
imation the upper subband is almost decoupled from all
others.
,
(48)
The Born decay rate
Under the condition (49) the electrons in the N -
subband states have low longitudinal velocity and there-
fore do not contribute much to the current. The latter is
dominated by the states in all other bands. However, the
singularity in the N -band is manifested also in the resis-
tivity ρ through the scattering rate that is proportional
to the density of the final states on the Fermi surface:
ρ
ρ0
=
ν(ε)
ν0
,
ρ0 =
1
e2ε0τ0
.
(57)
These final states predominantly belong to the N -band.
A. Smearing of the Van Hove singularities within
the Born approximation
It is clear that the scattering should somehow smear
the singularities both in the density of states and in the
resistivity. In this section we will discuss the mechanism
of this smearing within the Born approximation. The
condition of its applicability will be discussed in the fol-
lowing section.
Within the Born approximation one can write (see,
e.g.,6,8)
(cid:104)ν(ε)(cid:105) = ν(0)[ε − Σ(ε)]
(58)
where Σ(ε) is given by (53). We are interested in the
behavior of (cid:104)ν(ε)(cid:105) in the vicinity of the Van Hove singu-
larity where ε (cid:28) 1 and the scattering is dominated by
the resonant band. It is convenient to discuss this prob-
lem separately for the cases ε > 0 (above the singularity)
and ε < 0 (below the singularity).
1. Above the Van Hove singularity
Here the self-energy is almost purely imaginary: the
scattering is more important than the energy shift. The
scattering obviously leads to decay of the plane waves
and the decrement of this decay is just τ−1 given by the
formula (56). For τ−1 (cid:28) ε the average density of states
is almost insensitive to the scattering.
In the narrow vicinity of the singularity, for τ−1 ∼ ε,
the scattering becomes effectively strong, the density of
states is strongly changing on the scale of the width of
the relevant states. Thus, at τ−1 ∼ ε the density of
states saturates and we conclude that the corresponding
peaks are smoothed at ε ∼ εmin ∼ τ−1. However, τ−1
itself depends on ε and so we arrive at the self-consistency
condition:
1
τ (ε)
=
1
τ0
ν(ε)
ν0
√
∼ 1
πτ0
ε
≈ ε
(59)
from where we can easily get
ε ∼ εmin = (2πτ0)−2/3 = [(λ/π)2(n/π)]2/3,
(60)
τ0
τmin
∼ νmax
ν0
∼ ρmax
ρ0
∼
(cid:34)(cid:18) λ
(cid:19)2(cid:16) n
(cid:17)(cid:35)−1/3
π
π
8
.
(61)
2. Below the Van Hove singularity
Now we have to find the density of states for ε < 0. It
seems clear that for ε (cid:46) min the value of ν() can not
change considerably so that one can expect
ν(ε) ∼ νmax,
τ (ε) ∼ τmin,
for ε (cid:46) εmin
(62)
On the other hand, in the range ε (cid:29) εmin the correction
to the density of states can be found with the help of
perturbation theory which gives
ν(ε) − ν0 ∼ ν0
(−ε)−3/2
τ0
∼ ν0
(cid:18) εminε
(cid:19)3/2 (cid:28) ν0.
(63)
It is important to note that the correction (63) is rela-
tively small already for ε (cid:46) εmin. It means that
ν(−εmin) ∼ ν0 (cid:28) ν(εmin)
(64)
and direct smooth matching of (63) and (62) is impossi-
ble!
To resolve this paradox one should in principle go be-
yond the estimates made above, and accurately solve the
problem in the range ε (cid:46) εmin. However, for a qual-
itative understanding it is enough to note that there is
practically only one scenario for such a giant drop in the
density of states: a "quasifold" -- an inflection point with
almost vertical slope, see Fig. 6.
FIG. 6: The "quasifold":
in the vicinity of the bifurcation
point ε = εbi the slope of the curve ρ(ε) is anomalously steep.
In the dependence ν(ε) at some point εbi there
should be very large positive first derivative ν(cid:48)(εbi) (cid:29)
ν(εmin)/εmin zero second derivative and rather small
third derivative. An example of such a behaviour is pro-
vided by the results of the self-consistent Born approxi-
mation, given in Appendix A. Although these results can
not be taken too seriously (since the self-consistent Born
approximation is not rigorous), the main message seems
to be reliable: the entire domain ε ∼ εmin is split into
two basic subdomains: ε < εbi where ν ∼ ν0 and ε > εbi
where ν ∼ ν(+εmin) (cid:29) ν0. Between these two subdo-
mains there is a narrow intermediate layer around εbi in
which ν(ε) undergoes a dramatic change.
Then the results can be roughly summarized as follows:
ρ(ε)
ρ0
=
π
1 +
√
1
,
ε
∼ λ−2/3n−1/3,
∼ 1,
for εmin (cid:28) ε, ε > 0,
for εbi < ε (cid:46) εmin,
for ε < εbi,
(65)
with certain εbi < 0, εbi ∼ εmin. A schematic plot of
(65) is shown in FIG.7.
FIG. 7: The shape of a smeared Van Hove singularity within
the Born approximation.
V. BEYOND THE BORN APPROXIMATION
The above considerations seem plausible and straight-
forward. However, the analysis below shows that they are
only applicable if the concentration of impurities is high
enough, i.e. for n (cid:29) nc ∼ λ. For n (cid:28) nc the scattering
that determines the form of smeared Van Hove singulari-
ties is strongly modified by non-Born effects that dramat-
ically grow upon approaching the singularity. We start
our discussion from the properties of an exact amplitude
of scattering by a single short-range impurity, placed on
the wall of the tube.
A. A single impurity problem in two dimensions:
non-Born effects
Properties of short-range impurities or defects in two-
dimensional systems are well studied. In this subsection
we briefly remind the main facts.
9
In particular,
it is known that a weakly-attracting
short-range impurity always forms a bound state24. Writ-
ing the hamiltonian of the system in the form (50) with
λ < 0 one finds that there is a single bound state with
small binding energy
(cid:18)
(cid:19)
bound ≈ − 2
E(2d)
m∗a2
0
exp
− π
λ
,
(66)
where a0 is the ultraviolet cutoff ("radius of the delta-
function") The wave-function of the ground state
ψ0(r) ∼ exp(−r/a(2d)),
a(2d) = (2m∗E(2d)
bound)−1/2,
(67)
being the radius of the ground state wave function.
A scattering of a particle with positive energy E (cid:28)
is isotropic. For r (cid:29) a0 one can write the "scatter-
2
0
m∗a2
ing wave-function" in the form24
ψp(r) = exp{i(p · r)} − iλH (1)
0 (pr), E = p2/2m∗,
(68)
where H (1)
pr (cid:29) 1 one can write
0 (x) is the Hankel function. Moreover, for
ψp(r) ≈ exp{i(p · r)} − λ
exp(ipr),
(69)
(cid:114) 2
−iπpr
The above results should be modified if one wants to
go beyond the Born approximation.
If the condition
E (cid:28) U0 (or ka0 (cid:28) 1) is fulfilled then the scattering
remains isotropic even beyond the Born approximation;
it means that the scattering amplitude is still charac-
terised by a single dimensionless constant: small real λ
in the result (69) should be replaced by not necessar-
ily small complex Λ -- the nonperturbative dimensionless
scattering amplitude. The latter should obey the optical
theorem:
ImΛ = −Λ2,
(70)
hence the scattering amplitude can be parametrised by a
single real constant λ
(cid:16)(cid:112)
(cid:17)
Λ = λe−i arcsin λ ≡ λ
1 − λ2 − iλ
.
(71)
In particular, for weak interaction (λ (cid:28) 1)
Λ ≈ λ − iλ2.
(72)
Note that parameter λ in (71) is related to the poten-
tial amplitude V by formula (55) only for λ (cid:28) 1. In
general case it is not true and λ is just a convenient pa-
rameter for expressing the phenomenological scattering
amplitude.
B. A single impurity problem on a cylinder:
semiclassical treatment of non Born effects
Let us place a single weakly attracting impurity on the
surface of the cylinder. Clearly, there are two distinct
cases with respect to the bound state of an electron:
(i) Wide cylinder or strong scattering: R (cid:29) a(2d). In
this case the bound state will not differ much from the
purely two-dimensional case and the formula (66) applies.
(ii) Narrow cylinder or weak scattering: R (cid:28) a(2d).
This is an effectively one-dimensional case, the bound
state can also be studied easily.
In this paper we will be interested, however, not in the
ground state but in the scattering matrix for an electron
with energy E > 0 in the range
E0, Ebound (cid:28) E (cid:28) 2
m∗a2
0
.
(73)
Under this condition the scattering process can be con-
veniently described in semiclassical terms. To find the
scattering amplitude beyond the Born approximation one
has to solve the Dyson equation
G(r1, r2) = G0(r1, r2) + G0(r1, r0)V G(r0, r2)
for the retarded Green function defined as
G =
E − H + i0
G0 =
E − H0 + i0
(cid:111)−1
(cid:110)
(cid:110)
(cid:111)−1
(74)
(75)
where r0 is the position of the impurity. In particular,
putting r1 = r2 = r0 we arrive at the equation
g = g0 + g0V g,
g ≡ G(r0, r0) =
g0
1 − V g0
where
One can also write
g0 ≡ G0(r0, r0)
(76)
(77)
G(r1, r2) = G0(r1, r2) + G0(r1, r0)VrenG0(r0, r2) (78)
with the renormalized scattering amplitude
V
Vren =
1 − V g0
(79)
First of all we have to find the single-site g0 ≡ GE(0, 0).
For our nontrivial topology one can write in the semi-
classical approximation
eπinΦ/Φ0GE(2πnR),
(80)
∞(cid:88)
g0 =
n=−∞
GE(r) being the retarded Green function in an infinite
two-dimensional metal. For n (cid:54)= 0 one can use the semi-
classical approximation:
GE(r) ≈
ei(pr+π/4).
(81)
(cid:114) 2
πpr
(cid:12)(cid:12)(cid:12)(cid:12)
(cid:12)(cid:12)(cid:12)(cid:12)2 ν(ε)
ν0
For the n = 0 term we have
GE(0) = − im∗
2
+ C
10
(82)
where C is a formally infinite real constant. This diver-
gency is well known -- it means that the perturbation
theory does not work well in spatial dimensions d ≥ 2
when applied to point-like impurities. This phenomenon
is not specific for the cylinder geometry -- it is present in
an infinite two-dimensional metal as well. Special meth-
ods to deal with this divergence were developed already
long ago. It was shown that in the case of isotropic scat-
tering, accurate calculations lead to the substitution of
the bare coupling constant λ by the exact complex ampli-
tude Λ of scattering by the same impurity in the infinite
two-dimensional metal. Thus, for the fully renormalized
scattering amplitude Λ(ren) in the case of cylinder we get
Λ(ren)(ε) =
Λ
1 + Λg(ε)/πν0
,
(83)
where g(ε) ≡ g0 is given by the formulas (80), (81), (82)
where the infinite constant C is discarded. As a result,
we arrive at the expression (45). Consequently, the scat-
tering rate is also renormalized:
1
τ (ε)
=
2n
π2
Λ
1 + Λg(ε)/πν0
.
(84)
For small λ the discussed renormalization is only essential
in the vicinity of some Van Hove singularity so that we
can use asymptotics g(ε)/πν0 ≈ π−1(−ε)−1/2 and for
small λ (cid:28) 1 one can write
Λ(ren)(ε) ≈
λ − iλ2
1 + (λ − iλ2)(−ε)−1/2/π
.
(85)
The importance of the renormalization of the scattering
matrix in the systems with the singularity in the density
of states (e.g., superconductors) that can even lead to
formation of bound states was discovered and explored
in details already in 60-ies (see25 -- 29).
for ε (cid:46) εnB, where
It is clear that the non-Born effects first come into play
εnB = (λ/π)2,
(86)
so that it is sometimes convenient to use the "normal-
ized" energy:
≡ ε/εnB.
(87)
Note that for ε (cid:28) εnB the scattering amplitude for-
mally vanishes: Λ(ren) ≈ π(−ε)1/2. It means, in partic-
ular, that exactly at the van Hove singularity a quasi-
one-dimensional system tends to become an ideal con-
ductor with zero resistivity. In the following section we
will demonstrate that for finite concentration of impuri-
ties the resistivity remains finite, though very small:
it
is proportional not to n, but to n3.
VI.
SINGLE-IMPURITY NON-BORN EFFECTS
or, in dimensional variables
11
(91)
IN RESISTIVITY
Physically the effect of renormalization is manifested
in the scattering time τ (ε) in which λ should be replaced
by Λ(ren)(ε). Similar to the Born case, for
τ−1(ε) (cid:28) ε
(88)
the scattering is effectively weak (though non-Born!) so
that only the single impurity effects should be taken into
account and one can use the standard Drude formula with
properly renormalized scattering time. In this Section we
concentrate on this "weak non-Born scattering" regime.
We will consider the cases of repulsing and attracting
impurities separately.
Certainly, there were some theoretical approaches to
the non-Born effects in quasi-one-dimensional systems in
the past. S. Hugle and R. Egger8 studied the smearing
of Van Hove singularities within the self-consistent Born
approximation similar to that described in Appendix A.
In contrast with our work, instead of the quadratic spec-
trum of electrons they considered more realistic linear
spectrum, characteristic of carbon nanotubes. This dif-
ference, however, is not essential, as far as one is in-
terested only in the shape of the Van Hove singulari-
ties: it may actually be reduced to redefinition of some
constants. What is much more important, instead of
considering individual impurities S. Hugle and R. Eg-
ger introduced the disorder in the form of gaussian white
noise. Such an approach does not allow to find the single-
impurity non-Born effects that, as we have seen, are cru-
cial at low concentrations n2 (cid:28) n(c)
2 . So, their results
are applicable to impurities only at high concentration
n2 (cid:29) n(c)
2 .
A. Repulsing impurities
For weak repulsive impurities (λ > 0, λ (cid:28) 1) the
imaginary part of Λ can be neglected and we get
(cid:18)
(cid:19)
ρ(ε)
ρ0
=
τ0
τ
=
=
Λ(ren)2
λ2
1 +
√
1
ε
π
θ(ε)
=
1
1
1/2 + −1/2
λ
(1 + −1/2)2
1
,
,
for > 0,
for < 0,
(89)
This dependence is plotted in Fig. 2:
So, for ε > 0 both the scattering rate and the resistiv-
ity have smooth maxima at ε = εnB) with the value at
maximum
1
τ (+)
min
=
2n2
m∗ λ,
ρ(+)
max
ρ0
=
1
λ
(cid:29) 1.
For ε < 0 the scattering rate grows monotonically with
growing ε and saturates at τ−1 = τ−1
for ε (cid:29) εnB .
The non-Born effects somewhat suppress the resistiv-
ity, compared to the Born results. For repulsing impu-
rities this is true for all ε but the strongest effect is ex-
pected for ε (cid:46) εnB.
0
B. Attracting impurities
For attracting impurities the renormalized scattering
amplitude has a pole in the complex plane of ε at
ε = εnB(−1 + 2iλ),
(92)
close to the real axis. This fact indicates the existence of
a quasistationary state. We have to take into account the
imaginary part of Λ that keeps trace of the decay of this
state: otherwise the pole would move to the real axis
and there will be nonphysical divergence of amplitude.
However, this is only necessary in the narrow vicinity of
the resonance at ε = εnB. So we can write
=
1
λ
1
1/2 + −1/2
1
(1 − −1/2)2
,
,
4
(1 − )2 + 4λ2 ,
ρ(ε)
ρ0
=
τ0
τ
=
for > 0,
for < 0, 1 − (cid:29) λ,
(93)
for < 0, 1 − (cid:46) λ,
This result is plotted Fig. 3.
Thus, for ε > 0 (and also for ε < 0 but ε (cid:28) εnB)
the behaviour of the renormalized scattering rate for at-
tracting impurities is identical to that of repulsing ones.
Their behaviours are very different, however, for ε < 0
(and not small ε (cid:38) εnB). While for repulsive impuri-
ties both the rate τ−1 and the resistivity ρ smoothly and
monotonically increase with ε, for attracting impurities
they first grow, reach sharp maxima at ε = −εnB and
only then decrease, saturating at τ−1 = τ−1
and ρ = ρ0
for ε (cid:29) εnB. The maximum has a Lorenzian shape:
0
ρ(ε) = ρ(−)
max
πΓhom
2
L(ε + εnB, Γhom),
(94)
L(x, γ) ≡
γ/2
π (x2 + (γ/2)2)
.
(95)
The width of maximum (homogeneous broadening)
1
τ (+)
min
=
1
2λτ0
=
nλ
π2 ,
(90)
Γhom ∼ 4λεnB =
4λ3
π2 (cid:28) εnB,
(96)
is relatively small. This decay is due to small probability
of scattering to the bands other than the N -band. The
height of the maximum is universal -- it does not depend
on the strength of impurities λ. In dimensional variables:
ρ(−)
max =
4n2
e2m∗RE
.
(97)
The scattering rate at maximum is even more universal:
1
τ (−)
min
=
1
λ2τ0
=
2n
π2 =
4n2
m∗ .
(98)
VII. MULTI-IMPURITY EFFECTS. THE
CENTRAL DIP IN RESISTIVITY.
In the previous section we have implicitly assumed the
concentration of impurities n to be so low that scattering
amplitude at certain impurity could not be affected by
the presence of all the others: τ−1(ε) (cid:28) ε. Let us first
derive the condition that would justify this assumption.
We have found that the non-Born effects are negligible
for ε (cid:38) εnB. On the other hand, if one totally neglects the
non-Born effects, then, as it follows from (59), the scat-
tering effects lead to the saturation of both the density of
states and the conductivity for ε (cid:46) εmin. These two facts
taken together mean that for εnB (cid:28) εmin the non-Born
effects do not have chance to show up at all. On the
contrary, for εmin (cid:28) εnB the scattering only comes into
play at ε (cid:28) εnB where the non-Born effects are already
huge. Thus, looking at the expressions (61) for εmin and
(86) for εnB we conclude that the non-Born effects are
relevant for n < nc, where
nc ∼ λ,
(99)
while for n > nc the Born approximation is justified for
all ε and the results of section IV are applicable.
In this Section we are going to study the effect of scat-
tering at low concentration n (cid:28) nc but also at very low
ε at the same time. We will show that the presence
of other impurities ultimately becomes essential in the
narrow vicinity of the Van Hove singularity -- at certain
energy scale ε(nB)
min .
In the case of developed non-Born regime, for ε (cid:28) εnB
we have Λg (cid:29) 1, so that
(cid:12)(cid:12)(cid:12)Λ(ren)(ε)
(cid:12)(cid:12)(cid:12)2 ≈ π2ε.
(cid:18)
√
1
1 +
π
τ−1(ε) = 2εn
(cid:19)
We see that the rate 1/τ ceases to depend on λ and be-
comes universal:
independent on the characteristics of
impurities:
(100)
12
from either side and formally vanishes at ε = 0. Taken
seriously, it would mean that exactly at singularity the
system has zero residual resistivity. Of course, we ex-
pect that taking scattering in account will remove this
paradox.
To demonstrate this, we have to incorporate the scat-
tering in the result (101). Again, as in Section IV A we
notice that the above calculations only make sense for
τ−1(ε) (cid:28) ε, so that the dip in the resistivity predicted
by (101) will be rounded at certain ε ∼ ε(nB)
min , where
ε(nB)
min , however, is not given by (60) any more because
the expression for the scattering time (101) differs from
it has been changed by the non-Born effects. So,
(56):
the self-consistency condition τ−1(ε) ∼ ε for ε(nB)
min reads
τ−1(cid:16)
(cid:17)
(cid:113)
ε = +ε(nB)
min
=
2n
π
min ∼ ε(nB)
ε(nB)
min ,
(102)
from where immediately follows
ε(nB)
min = (n/π)2 .
(103)
Comparing (103) to (86) we see that, indeed, the scat-
tering effects bring the renormalization of the amplitude
Λ(ren)(ε) to stop at some small, but nonzero value.
The results (100) and (103) were obtained under the
assumption ε > 0 so we need yet to discuss the scattering
effects for ε < 0. Here we get
τ−1(ε) = 2nε (cid:28) ε,
(104)
which formally means that for negative ε the scattering
does not affect the result (101) for all values of ε, down
to ε = 0! This is, of course, not quite true because, due
to scattering effects, the discontinuity in the density of
states at ε = 0 should be smoothed and 1/τ (ε) should
remain of the order 1/τmax also for ε < 0 in the range
ε (cid:46) ε(nB)
min .
Thus, in the strongly non-Born domain n (cid:28) n(nB)
we encounter the similar paradox as in the Born case at
n (cid:29) n(nB). Namely, the above consideration gives non-
matching estimates on the opposite sides of the interval
ε (cid:46) ε(nB)
min :
τ−1 ∼
n2,
n3,
for ε > 0, ε ∼ n2,
for ε < 0, ε ∼ n2.
(105)
(cid:40)
The resolution of this paradox is also similar to that in
bi ≡
the Born case: there is a quasifold at certain ε = ε(nB)
min , (with qbi < 0, qbi ∼ 1) where the scattering
qbiε(nB)
rate undergoes a dramatic drop, so that
2nε,
n2,
√
2n
ε/π,
bi
for ε < ε(nB)
for ε > ε(nB)
bi
for ε (cid:29) ε(nB)
min ,
,
, ε (cid:46) ε(nB)
min ,
(106)
It should be stressed that the scattering rate decreases
as the Fermi level approaches the Van Hove singularity
θ(ε)
.
ε
(101)
τ−1(ε) ∼
13
aloc = (2εnB)−1/2 = πλ−1 is the radius of the localized
state. So, naloc ∼ n/λ ∼ n/nc and, under condition
n (cid:28) nc, the influence of other impurities typically is ex-
ponentially small. However, this influence may be large
in some rare non-typical configurations and we will esti-
mate their contribution.
Due to a rare local fluctuation two impurities may oc-
cur at non-typically small distance r (cid:46) aloc from each
other, resulting in a considerable splitting ∆(r) ∼ εnB of
a pair of initially degenerate localized states. It leads to
inhomogeneous broadening
Γinhom ∼ (naloc)εnB ∼ n
nc
εnB
(111)
that prevails in the intermediate range of concentrations:
λ2 (cid:28) n (cid:28) λ, while for lowest n (cid:28) λ2 the homo-
geneous broadening is stronger. We should stress that
the inhomogeneous broadening (111) exists already in
the system where all impurities are identical (have the
same λ). Naturally, the systems with dispersion of λ
demonstrate much stronger inhomogeneous broadening.
We will briefly discuss such systems in Section IX.
(110)
IX. SYSTEMS WITH DIFFERENT SORTS OF
IMPURITIES
and the weakest scattering is realized at some ε = ε(nB)
dip
below ε(nB)
:
bi
≈
1
τmax
1
τ (ε = ε(nB)
dip )
∼ nε(nB)
min ∼ n3,
or, in dimensional variables
1
τmax
∼ (2πR)4[n2]3
m∗
.
(107)
(108)
This result is supported by the calculations within the
"self-consistent non-Born approximation", given in Ap-
pendix B. Thus, we conclude that the minimal value
of the scattering rate and, consequently, the minimal
value of resistivity is attained a little bit to the left
from the exact position of the Van Hove singularity, at
ε = ε(nB)
dip ∼ −n2 and
ρmin =
1
1
e2RE
τmax
∼ (2πR)4[n2]3
e2m∗RE
(109)
This minimal value depends neither on sign, nor on mag-
nitude of λ and is much less than the standard resistivity:
(cid:19)2 (cid:28) 1.
(cid:18) n
nc
ρmin
ρ0
∼ n2
λ2 =
The dependence ρ() near the minimum is shown in Fig
8.
FIG. 8: The energy-dependence of resistivity near the mini-
mum. Dashed line -- for n → 0, solid line -- for finite n.
VIII.
INHOMOGENEOUS CONTRIBUTION TO
BROADENING OF THE RESONANT PEAK
One could expect that in the case of attracting im-
purities the scattering would lead also to broadening
of the narrow resonant peak at ε = −εnB, so that
Γ → Γhom + τ−1. But this idea is wrong since the
corresponding electrons are localized at resonant states
of certain individual impurities and, at low concentra-
tion, have no chance to be scattered by some other im-
purity. This statement is justified if naloc (cid:28) 1, where
In realistic physical systems the impurities are not nec-
essarily identical. They may be of different types and
they may be situated not directly in the wall of the tube,
but at some distance from it. As a result the effective
scattering amplitudes Λi of different impurities may be
different and random, with some distribution function
P (λ) for real parameter λi (see (71)). The most impor-
tant characteristic of this distribution is
λ ≡(cid:112)(cid:104)λ2(cid:105)
(112)
What may be the consequences of such disorder? In the
Drude approximation the only dependence of the resis-
tivity ρ(ε) on Λ comes from the factor τ−1(ε). Since the
contributions of different impurities to the resistivity are
additive, one can write
(cid:28) 1
(cid:29)
τ (ε, λ)
λ
(cid:90) (cid:12)(cid:12)(cid:12)(cid:12)
∝
(cid:104)ρ(ε)(cid:105) ∝
Λ
1 + Λg(ε)/πν0
P (λ)dλ
(cid:12)(cid:12)(cid:12)(cid:12)2
(113)
For n (cid:29) λ the expression (113) can be expanded in small
Λ, the non-Born effects are small and we return to the
results of Section IV where one should substitute λ → λ.
For n (cid:28) λ the scattering rate does not depend on λ
in the range ε (cid:28) εnB ≡ (λ/π)2, therefore all the re-
sults of Section VII also apply to the case of random λ
in this range. The case ε ∼ εnB is non-universal, here
the result of averaging may depend on explicit shape of
the function P (λ). In particular, the contribution of the
inhomogeneously broadened resonant peak can be eval-
uated with the help of expressions (96), (94). Assuming
(cid:90)
that the Lorenzian peak in (94) is much sharper than the
distribution P (λ), we obtain
(cid:104)ρ(res)(ε)(cid:105) =
dλP (λ)ρ(−)
maxπ3εP
= ρ(−)
(cid:16)−π(cid:112)ε(cid:17)
maxπΓhom(λ)δ(ε + (λ/π)2) =
for ε < 0.
,
(114)
X. SUMMARY AND DISCUSSION
In this paper we have found the shape of the Van Hove
singularity manifested in the resistivity of a clean metallic
tube of radius R with low concentration n2 of weak short-
range impurities (either repulsing or attracting) per unit
surface of the tube. We have shown that there is certain
. For n2 (cid:29)
crossover concentration n(c)
n(c)
the Van Hove singularities are smoothed peaks at
E − EN ∼ ΓB with the width
2
2 = 1
(2πR)2
π
(cid:17)2
(cid:16)λ
(cid:19)2/3
(cid:18) R2n2λ2
π
ΓB ∼ 2
2m∗R2
.
(115)
The smoothing happens due to interference of scatter-
ing events at different impurities, while the amplitude
of scattering at each individual impurity is not affected.
The structure of the Van Hove singularity for n2 (cid:29) n(c)
remains simple: "plateau -- maximum -- plateau" (see Fig.
7).
In the most interesting regime at n2 (cid:28) n(c)
2 , the non-
Born renormalization of individual scattering amplitudes
happens already at E − EN ∼ EnB where the interfer-
ence effects are still negligible:
2
(cid:18)λ
(cid:19)2 (cid:29) ΓB.
π
EnB ∼ 2
2m∗R2
(116)
Note that the energy scale EnB does not depend on the
concentration of impurities. The interference of scatter-
ing events at different impurities comes into play only
at E − EN ∼ ΓnB, where the individual amplitudes are
already strongly renormalized (suppressed) and take uni-
versal value
(cid:18) 2π2m∗R2E − EN
(cid:19)1/2
λ → λ0(E) =
(117)
2
which does not depend on the initial "bare" λ. As a
result, instead of maximum ρ(E) demonstrates a deep
and narrow minimum at E − EN = Edip < 0 with a
width
ΓnB ∼ Edip ∼ 2
2m∗R2
(118)
The structure of the Van Hove singularity for n2 (cid:28) n(c)
depends on the sign of the scattering amplitude: for re-
pulsive interaction it is "plateau -- minimum -- maximum --
plateau" (see Fig. 2), while for attractive interaction
2
(cid:0)4πR2n2
(cid:1)2 (cid:28) EnB.
14
it is "plateau -- maximum -- minimum -- maximum -- plateau"
(see Fig. 3). We should stress, however, that an asym-
metric structure of the Van Hove singularity, similar to
the Fano resonance shape, arises at low concentration of
impurities for both signs of the scattering amplitude.
In the leading approximation in small parameter
n2/n(c)
(that corresponds to independent scattering at
2
different impurities) the resistivity an minimum ρmin van-
ishes, as it is shown in Figs. 2 and 3. The value of ρmin
becomes nonzero (ρmin ∝ n3
2, see Fig. 8) only if one
takes into account the interference of scattering events
at different impurities.
In the future publications we are going to discuss the
structure of Van Hove singularity in a conducting strip.
Here the "bare" (non-renormalized) effective scattering
amplitudes for different impurities inevitably differ from
each other because of the random position of impuritiy
with respect to the nodes of the transverse wave func-
tion in the resonant band. Since the dependence of the
renormalized scattering amplitude on the bare one is non-
monotonic, it can be shown that the leading contribution
to the resistivity comes not from the "strongest" impuri-
ties (those sitting in the antinodes of the wave-function),
but from some optimal ones. It leads to a serious mod-
ification of the results especially in the range of small
E − EN (cid:28) EnB.
In Conclusion, our study shows that at low concentra-
tion of impurities the non-Born effects lead to splitting
of the Van Hove singularities in resistivity of a tube (or,
in general, any other quasi-one-dimensional conductor)
and this effect can not be described in terms of the Fano
formula (1). The character of the splitting depends on
whether the impurities are attracting or repulsing.
We are indebted to M.V.Feigel'man, L.I.Glazman for
illuminating discussions. This work was supported by
Basic Research Program of The Higher School of Eco-
nomics.
Appendix A: Self-consistent calculations: strong
Born scattering
Strictly speaking, the concept of the self energy is rele-
vant only in the weak scattering domain where ε (cid:29) εmin
(for both ε > 0 and ε < 0). However, using the pertur-
bative expressions (58) and (53) also in the strong scat-
tering domain ε (cid:28) εmin can be helpful for qualitative
understanding of the behaviour of the density of states
and resolving the paradox mentioned in the subsection
IV A 2.
For a qualitative description of the density of states at
strong scattering the self-consistent Born approximation
can be used. The selfconsistency equation for Σ reads
(cid:32)
(cid:33)
π(cid:112)ε − Σ(ε)
1
Σ(ε) = − i
2τ0
1 +
,
(A1)
so that
ν(ε)
ν0
Σ(ε) = − i
2τ0
= 1 + Re
− εminY
(cid:40)
(cid:20) 1
(cid:41)
π(cid:112)ε − Σ(ε)
(cid:19)(cid:21)
(cid:18)
1
ε +
i
2τ0
εmin
15
For ε > εbi and ε − εbi (cid:29) Im q this imaginary part can
be totally neglected and
,
,
(A2)
(A3)
ν(ε)
ν0
= 1 +
√
1
εmin
π
Σ(ε) ≈ −εminY (ε/εmin),
(cid:112)(ε/εmin) + Y (ε/εmin)
1
(A8)
.
(A9)
where Y (q) is the solution of cubic equation
Y 2(Y + q) + 1 = 0.
(A4)
On the other side of the bifurcation point, for ε < εbi and
ε− εbi (cid:29) Im q the Im q-term may be taken into account
perturbatively:
There is a bifurcation point q = qbi such that for real
q < qbi all three solutions of (A4) are real while for
q > qbi there is one purely real solution and two con-
jugated complex solutions (only the latter ones are phys-
ically relevant). Near the point q = qbi one can write
Ybi = 21/3, A = 22/33−1/2,
√
Y ≈ Ybi ± iA
q − qbi
qbi = −3 · 2−2/3.
(A5)
(A6)
Thus, if the parameter q were purely real then Im Σ would
vanish for ε < εbi ≡ qbi εmin. In our case, however, q has
small but finite imaginary part
√
Im q = π
εmin (cid:28) 1.
(A7)
and
Σ(ε) ≈ −εminY (ε/εmin) − i
2τ0
1 + Y (cid:48) (ε/εmin)
[1 + Y (cid:48) (ε/εmin)] , (A10)
, (A11)
ν(ε)
ν0
= 1 +
2 [(ε/εmin) + Y (ε/εmin)]3/2
where Y (cid:48)(q) ≡ dY (q)/dq.
In the narrow vicinity of the bifurcation point, for ε−
εbi (cid:46) Im q one should keep Im q but, on the other hand,
one can use expansion (A6) for Y (q). As a result, in this
range we obtain
Re Σ(ε) ≈ −εminYbi,
(A12)
(cid:34)(cid:0)Q2 + 1(cid:1)1/2
Im q
(cid:35)1/2
+ Q
≈ −
√
A
Im q
2τ0
(cid:40)
Im Σ(ε) ≈ − A
2τ0
A Im q
≈
ν(ε)
ν0
√
A
Im q
π
√
1
εmin
(cid:40)
Im q
2 (qbi + Ybi)3/2
(2Q)1/2 , Q > 0, 1 (cid:28) Q (cid:28) (Im q)−1,
−1/2 , Q < 0, 1 (cid:28) Q (cid:28) (Im q)−1.
(−2Q)
≈
√
1
εmin
π
2 (qbi + Ybi)3/2
(2Q)1/2 , Q > 0, 1 (cid:28) Q (cid:28) (Im q)−1,
−1/2 , Q < 0, 1 (cid:28) Q (cid:28) (Im q)−1.
(−2Q)
(cid:34)(cid:0)Q2 + 1(cid:1)1/2
(cid:35)1/2
+ Q
≈
(A13)
(A14)
Here
Q(ε) = 2τ0 (ε − εbi) .
(A15)
So, as it is easy to check, for Q (cid:29) 1 the asymptotics
(A13) overlaps with the results (A9) and (B19).
The result (A15) should not be taken too seriously: the
self-consistency equation (A3) can not be justified rigor-
ously. However, the qualitative behaviour of the decay
rate and the density of states predicted by (A13) and
(B19) gives us a reasonable pattern of matching conflict-
ing results (61) and (64). Namely, there is a narrow in-
terval ε − εbi (cid:46) 1/2τ0 around certain bifurcation point
εbi (εbi < 0, εbi ∼ εmin) where both ν(ε) and τ−1(ε) in-
crease with ε very rapidly, and just this increase explains
the parametrically large difference between the results
(61) and (64).
Appendix B: Self-consistent calculations: strong
non-Born scattering
The general (with an account for the non-Born renor-
malization of the scattering amplitude) self-consistency
equation for the self-energy Σ reads
(cid:12)(cid:12)(cid:12)Λ(ren)(ε − Σ(ε))
(cid:12)(cid:12)(cid:12)2 g(ε − Σ(ε))
πν0
Σ(ε) =
n
π2
(B1)
where Λ(ren) is given by (85) and the density of states is
determined by formula (A2). In the case of strong non-
Born effect one can use an asymptotic expression (100)
and get
where we have used the formula
Σ(ε) = −inε − Σ
1 +
(cid:32)
(cid:33)
π(cid:112)ε − Σ(ε)
1
,
(B2)
1√
a + ib
=
a2 + b2 + a
2(a2 + b2)
− i
(cid:115)√
16
. (B12)
(cid:115)√
a2 + b2 − a
2(a2 + b2)
Let us first neglect the constant term in g, then we get
or
Σ(ε) = − in
π
√
ε − Σ∗,
Σ = −ε(nB)
q ≡ ε
,
min Y,
ε(nB)
min
Y 2 + q + Y ∗ = 0.
(B3)
(B4)
(B5)
So, the approximate equation (B3) leads to the result
1/τ (ε) ≡ −2Im Σ(ε) = 0 for all ε < εbi. To determine
finite scattering rate in this range we should go beyond
and take into account the first term −inε − Σ on the
right hand side of equation (B2). When doing so we
can, however, substitute the found zero-approximation
solution to this correction term. Then, instead of (B5),
we arrive at
For real q the general structure of solutions for equation
(B5) is as follows:
[Y + in(Y4(q) + q)]2 + q + Y ∗ = 0,
(B13)
(cid:114) 3
(cid:114) 1
4
For q > 1/4 there are two complex conjugated solu-
tions:
Y1,2 =
1
2
∓ i
For q < −3/4 there are two real solutions:
+ q
(B6)
Y3,4 = − 1
2
∓
(B7)
For −3/4 < q < 1/4 all four solutions Y1,2,3,4 are accept-
able.
4
There is, however, always only one physically relevant
− q
solution:
Y (q) =
(cid:26) Y4,
Y2,
where we have noted that in the range q < qbi both q
and Y4(q) are real, and also q − Y4(q) ≡ Y 2
4 (q) is real
and negative so that we could write ε− Σ = ε(nB)
min Y 2
4 (q).
Then
Σ = −ε(nB)
min [inY 2
4 (q) + Y (q)],
(B14)
where Y (q) is the solution of (B5) with complex
for q < qbi,
for q > qbi
qbi = −3/4.
(B8)
q ≡ q − inY 2
4 (q).
(B15)
Thus, the bifurcation energy
min qbi,
ε(nB)
bi = ε(nB)
(cid:114)
bi < ε (cid:28) εnB we have
= −2Im Σ(ε) = 2
ε(nB)
min
(cid:16)
ε − ε(nB)
bi
(cid:17)
and for ε(nB)
1
τ (ε)
ν(ε)
ν0
= 1 + Re
,
=
(cid:17)
(cid:114)
π
(cid:16)
1
ε + ε(nB)
min Y2
= 1 +
(cid:113)
(cid:16)
π
ε/ε(nB)
min
(cid:17) , (B11)
ε − ε(nB)
ε + ε(nB)
min
bi
(B9)
For q < qbi the imaginary part of q can be treated per-
turbatively:
(B10)
Y (q) ≈ Y4(q) + in
Y 2
4 (q)
2Y4(q) − 1
,
(B16)
and
Σ(q) ≈ −ε(nB)
min Y4(q)
(cid:26)
1 + in
Y 2
4 (q)
Y4(q) − 1/2
(cid:27)
(B17)
1
τ (ε)
= −2Im Σ(q) = nε(nB)
min
((cid:112)1 + 4q − 1)3((cid:112)1 + 4q + 2)
8(q − qbi)
,
q ≡ ε
ε(nB)
min
< qbi ≡ − 3
4
(cid:113) 1
4 + q + 1
2(q − qbi)
ν(ε)
ν0
= 1 +
1
2[Y4(q) − 1/2]
= 1 +
17
(B18)
(B19)
,
,
where we have used
Y4(q) − 1/2 =
(cid:114) 1
4
+ q − 1 =
(cid:113) 1
q − qbi
4 + q + 1
and the density of states grow:
.
(B20)
Σ ≈ − ε(nB)
min
2
1 +
in
2
ε(nB)
min
bi − ε
ε(nB)
(cid:40)
(cid:41)
,
ν(ε)
ν0
≈ ε(nB)
min
bi − ε
ε(nB)
.
(B22)
In particular, for q (cid:29) 1 the scattering rate grows with
ε while ν(ε) saturates:
Σ() ≈ −
min ε − inε,
ε(nB)
ν(ε) ≈ ν0
(B21)
(cid:113)
which is in agreement with (104). When q approaches
qbi (i.e., ε → ε(nB)
from below), both the scattering rate
bi
1 P.Y.Yu and M.Cardona Fundamentals of Semiconductors.
Physics and Material Properties. Chap. 6.2, Springer,
(2010).
2 A. A. Abrikosov, L. P. Gorkov, and I. Dzyaloshinskii,
Quantum Field Theoretical Methods in Statistical Physics,
(Pergamon, New York, 1965).
3 Elliott, R.I., Krumhansl, I.A., Leath, P.L.: Rev. Mod.
Phys. 45, 465 (1974).
4 Lee, P.A., Ramakrishnan, T.V.: Rev. Mod. Phys. 57, 287
(1985).
5 P. A. Lee, Phys. Rev. Lett. 71, 1887 (1993)
6 M.J. Kearney and P.N. Butcher, J. Phys. C20, 47 (1987).
7 P. Vasilopoulos, F.M. Peeters, Revista Brasileira de Fysica,
19, no 3, (1989)
8 S. Hugle, R. Egger, Phys. Rev. B 66, 193311 (2002)
9 Z. Zhang, D. A. Dikin, R. S. Ruoff, and V. Chandrasekhar,
Europhysics Letters, 68, 713 (2004).
10 B. Babi´c and C. Schonenberger, Phys. Rev. B 70, 195408
(2004)
11 J. Kim, J. R. Kim, Jeong-O Lee, J. W. Park, H. M. So, N.
Kim, K. Kang, K. H. Yoo, and J. J. Kim, Phys. Rev. Lett.
90, 166403 (2003).
12 W. Yi, L. Lu, H. Hu, Z. W. Pan, and S. S. Xie, Phys. Rev.
Lett. 91, 076801 (2003).
13 U. Fano, Phys. Rev. 124, 1866 (1961).
14 A. E. Miroshnichenko, S. Flach, Y.S.Kivshar, Rev. Mod.
Phys. 82, 2257 (2010)
15 N. B. Brandt et al, Zh. Eksp. Teor. Fiz 72, 2332 (1977)
[Sov. Phys. JETP, 45, 1226 (1977)];
So, the scattering rate reaches its minimum at some ε =
dip ≡ ε(nB)
ε(nB)
min qdip, where
qdip = − 21
16
,
1
τ (εdip)
=
27
8
nε(nB)
min
(B23)
16 N. B. Brandt et al, Fiz. Nizk. Temp. 8, 718 (1982) [Sov. J.
Low Temp. Phys., 8, 358 (1982)]
17 A. Nikolaeva et al, Phys. Rev. B 77, 075332 (2008)
18 Y. Aharonov and D. Bohm, Phys. Rev. 115, 485 (1959)
19 B. L. Altshuler, A. G. Aronov, and B. Z. Spivak, Pis'ma
Zh. Eksp. Teor. Fiz., 33, 101 (1981) [JETP Letters, 33, 94
(1981)
20 B. L. Altshuler, A. G. Aronov, B. Z. Spivak,
D. Yu. Sharvin, and Yu. V. Sharvin, Pis'ma Zh. Eksp.
Teor. Fiz., 35, 476 (1982) [JETP Letters, 35, 588 (1982)]
21 A. G. Aronov and Yu. V. Sharvin, Reviews of Modern
Physics, 59, 755 (1987)
22 A. S. Ioselevich, JETP Letters, 101, 358 (2015)
23 The quadratic spectrum is taken only for simplicity. Since
the effects of interest are dominated by narrow vicinity of
the Fermi level, the obtained results can be easily reformu-
lated for arbitrary spectrum.
24 Landau and E.M. Lifshitz, Course in Theoretical Physics
(Pergamon, Oxford, 1981), Vol. 3 (Quantum mechanics.
Nonrelativistic theory.)
25 A. L. Fetter, Phys. Rev. 140, A1921 -- A1936 (1965).
26 K. Machida and F. Shibata, Prog. Theor. Phys. 47, 1817
(1972).
27 H. Shiba, Prog. Theor. Phys. 50, 50 (1973).
28 T. Soda, T. Matsuura, and Y. Nagaoka, Progress of The-
oretical Physics 38, 551 (1967).
29 H. Shiba, Progress of Theoretical Physics 40, 435 (1968).
|
1406.7771 | 2 | 1406 | 2015-03-30T13:07:17 | Raman spectroscopy as probe of nanometer-scale strain variations in graphene | [
"cond-mat.mes-hall"
] | Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information on nanometer-scale flatness and lattice deformations of graphene, making it a good quantity for classifying the structural quality of graphene even at zero magnetic field. | cond-mat.mes-hall | cond-mat |
Raman spectroscopy as probe of nanometer-scale strain variations in graphene
C. Neumann1,2, S. Reichardt1, P. Venezuela3, M. Drogeler1, L. Banszerus1, M. Schmitz1,
K. Watanabe4, T. Taniguchi4, F. Mauri5, B. Beschoten1, S. V. Rotkin1,6, and C. Stampfer1,2
1 JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
2 Peter Grunberg Institute (PGI-9), Forschungszentrum Julich, 52425 Julich, Germany
3 Instituto de F´ısica, Universidade Federal Fluminense, 24210-346 Niter´oi, RJ, Brazil
4 National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan
5 IMPMC, UMR CNRS 7590, Sorbonne Universit´es UPMC Univ. Paris 06,
6 Department of Physics and Center for Advanced Materials and Nanotechnology,
MNHN, IRD, 4 Place Jussieu, 75005 Paris, France
Lehigh University, Bethlehem, Pennsylvania 18015, USA
(Dated: October 6, 2018)
Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse
for graphene characterization. Here we show that the experimentally observed Raman 2D line
width is a measure of nanometer-scale strain variations in graphene. By investigating the relation
between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable
information on nanometer-scale flatness and lattice deformations of graphene, making it a good
quantity for classifying the structural quality of graphene even at zero magnetic field.
Graphene combines several highly interesting material
properties in a unique way, promising unprecedented ma-
terial functionalities. This makes graphene increasingly
attractive for industrial applications1 but, at the same
time, stresses the need for non-invasive characterization
techniques.
In recent years, Raman spectroscopy has
proven to be highly useful as a non-invasive method not
only to identify graphene2,3, but also to extract infor-
mation on local doping4 -- 7, strain8,9 and lattice tempera-
ture10,11. Even more insights can be gained when utiliz-
ing confocal, scanning Raman spectroscopy to study spa-
tially resolved doping domains7,12, edge effects3,13 and
position dependent mechanical lattice deformations, in-
cluding strain14 -- 16. The spatial resolution of so-called
Raman maps is on the order of the laser spot size (which
for confocal systems is typically on the order of 500 nm)
and the extracted quantities (such as doping or strain)
are in general averaged over the spot size.
It is there-
fore important to distinguish between length scales sig-
nificantly larger or smaller than the laser spot size. In
particular, we will distinguish between strain variations
on a micrometer scale, which can be extracted from spa-
tially resolved Raman maps, and nanometer-scale strain
variations, which are on sub-spot-size length scales and
cannot be directly observed by Raman imaging, but are
considered as important sources of scattering for elec-
tronic transport17.
Here we show that the experimentally observed Ra-
man 2D line width is a measure of nanometer-scale strain
variations in graphene on insulating substrates, i.e.
it
contains valuable information on local (i.e. nanometer-
scale) flatness, lattice deformations and crystal quality of
graphene. To prove that the the experimentally observed
2D line width depends on sub-spot size strain variations
and lattice deformations we employ the following strat-
egy:
(i) We start by showing that by combining Raman
spectroscopy with magnetic fields, electronic broadening
contributions for the Raman G line width can be strongly
suppressed. Since in perpendicular magnetic fields the
electronic states in graphene condense into Landau levels
(LLs), the interaction between electronic excitations and
lattice vibrations becomes B field dependent. In agree-
ment with existing theory18 -- 21 and experiments22,23, we
demonstrate that by applying a perpendicular B field
of around 8 T, the G line does as good as not depend
on electronic properties such as charge carrier doping,
screening or electronic broadening.
(ii) We observe that, under these conditions, the
G line width nevertheless exhibits strong variations
across graphene flakes. In particular, we show that the
G line width is significantly increased in regions where
the graphene flake features bubbles and folds, i.e. in cor-
respondence with increased structural deformations.
(iii) Finally, we show that at 8 T there is a (nearly) lin-
ear dependence between the G line width and the 2D line
width, implying that there is a common source of line
broadening. According to points (i) and (ii) the broad-
ening must be related to structural lattice deformations.
This finding is further supported by a detailed analysis
of the relation between the area of the 2D peak and its
line width. By analyzing the relation between the G and
2D line width, we find that nm-scale strain variations
constitute a dominant contribution to the observed line
broadenings. Importantly, the 2D line has been shown to
be only very weakly dependent on the B field24, meaning
that no magnetic field is required to extract information
on nm-scale strain variations from the 2D line width,
which makes this quantity interesting for practical appli-
cations.
For the low temperature Raman measurements, we em-
ploy a commercially available confocal Raman setup that
allows us to perform spatially-resolved experiments at a
temperature of 4.2 K and magnetic fields of up to 9 T. We
use an excitation laser wavelength of 532 nm with a spot
diameter on the sample of around 500 nm. For detection,
2
FIG. 1.
(color online) (a) Schematic cross section of the investigated sample highlighting the different regions I and II.
(b) Optical image of a Gr-hBN heterostructure resting partly on hBN and SiO2. (c) and (d) Raman spectrum taken on the
SiO2-Gr-hBN (c) and hBN-Gr-hBN (d) areas. The positions where the spectra were taken are marked by a blue and a red star,
respectively, in panel (b). (e) Raman map of the intensity of the hBN peak. The dashed lines mark the regions I and II. (f)
ΓGversus ωG recorded on various spots on regions I (blue) and II (red) of the sample. (g) Γ2D versus ω2D recorded on various
spots on regions I (blue) and II (red) of the sample. (h) Histograms of Γ2D recorded on various spots on regions I (blue) and
II (red) of the sample. (i) ω2D versus ωG recorded on various spots on regions I (blue) and II (red) of the sample.
we use a single mode optical fiber and a CCD spectrom-
eter with a grating of 1200 lines/mm. All measurements
are performed with linear laser polarization and a ×100
objective.
The investigated graphene (Gr) sheet is partly encap-
sulated in hexagonal boron nitride (hBN) and partly
sandwiched between SiO2 and hBN as illustrated in Fig-
ure 1a. An optical image of our sample is shown in Fig-
ure 1b.
In contrast to graphene encapsulated in hBN,
graphene flakes supported by SiO2 usually feature lower
carrier mobilities of around 103-104 cm2/(Vs), indicating
a detrimental influence of SiO2 on the electronic prop-
erties of graphene.
In this regard, our structure gives
us the invaluable capability of probing a single graphene
sheet exposed to two different substrates (region I and II
in Figures 1a and 1b). The sample is fabricated with a
dry and resist-free transfer process following refs. 25 and
26, where we pick up an exfoliated graphene flake with
an hBN flake and deposit it onto the hBN-SiO2 transi-
tion area of the substrate. A typical Raman spectrum of
graphene supported by SiO2 and covered by hBN, taken
at the position of the red star in Figure 1b, is shown in
Figure 1c. The characteristic hBN line as well as the
graphene G and 2D lines can be clearly identified. At
first glance, the spectra recorded in the hBN-Gr-hBN
area look similar (see Figure 1d, taken at the position
marked by the blue star in Figure 1b). However, it is ev-
ident that the ratio between the 2D and G line intensity
is higher in this case. Furthermore, the full width at half
maximum (FWHM) of the 2D line, Γ2D, is significantly
smaller.
The confocal nature of our Raman setup enables us
to do spatially resolved measurements. An example of a
Raman map is shown in Figure 1e, where the spatially
resolved intensity of the hBN line is depicted. The hBN
and SiO2 areas can be clearly distinguished in the map
(see highlighted regions I and II). When analyzing the
Raman spectra of every point on the map, one finds that
the G lines recorded in the hBN-encapsulated area are
broader than in the SiO2 supported area (compare red
and blue data points in Figure 1f). This is a clear indica-
tion of reduced charge carrier doping induced by the hBN
substrate compared to SiO2. In fact, at low charge carrier
doping, the phonon mode can decay into electron-hole
pairs, which results in a broadening of the G peak5,27.
For the 2D line, in contrast, the Γ2D recorded in the
hBN-encapsulated area is mostly between 16 cm−1 and
20 cm−1, while it is above 22 cm−1 in the SiO2 area (see
blue and red curves in the histogram of Figure 1h, re-
spectively). Note that both Γ2D and ΓG do not show
a dependence on the respective frequencies ω2D and ωG
(Figures 1f and 1g). In Figure 1i the position of the G
and 2D lines for every spectrum obtained on the investi-
gated graphene sheet are displayed. For both substrates,
the data points scatter along a line with a slope of 2.2.
This slope coincides with the ratio of strain induced shifts
(i.e. of the related Gruneisen parameters) of the Raman
G and 2D modes28. This indicates that there are sig-
2670268026902700271027201580159016002.2hBN (I)SiO (II)210 µm1200160024002800-1Raman shift (cm)(c)(d)152535203010counts (a.u.)(g)(h)(i)hBN intensity (a.u.)26802690270027100102030405051015202501580158515901595-1Γ (cm)G-1Γ (cm)2D(f)graphene-1Γ (cm)2D-1ω (cm)2D-1ω (cm)G-1ω (cm)2DSiO2hBNIIII(e)(b)IIIISiO-Gr-hBN2hBN-Gr-hBNIIIIIntensity (a.u.)d(a)SiO-Gr-hBN222.7Intensity (a.u.)1200160024002800IIIIII-1ω (cm)GhBN-Gr-hBN17.2hBN G 2D 3
matches the G mode phonon, the position of the G line is
shifted and its line width increases. An example for the
evolution of the Raman G peak with magnetic field, taken
on the hBN sandwich area, is shown in Figure 2a. The
individual spectra are offset for clarity. For a detailed
analysis, single Lorentzians are fitted to every spectrum.
The resulting frequency, ωG, and FWHM, ΓG, are dis-
played in Figures 2b and 2c, respectively. The arrow at
B = 3.7 T (Figure 2c) indicates a value of the magnetic
field where a LL transition is energetically matched with
the phonon, leading to a broadening of the G line. How-
ever, at a magnetic field of about 8 T, no LL transition
is close to the G mode, as illustrated in Figure 2d, where
the energies of the relevant LL transitions as a function of
magnetic field are compared to the energy of the G mode
phonon. Consequently at this high magnetic field the
influence of the electronic system on the position and
width of the G line is minimized. Note that this effect is
independent of the charge carrier density and the exact
values of the broadening of the LL transitions assuming
that the latter are within a reasonable range as found by
other studies23,34. Thus, the residual broadening of the
G line is most likely determined by phonon-phonon scat-
tering and averaging effects over different strain values
that vary on a nanometer scale (i.e. sub-spot size length
scale see also Supplementary Information).
To show that this applies to the entire sample, we first
show that the broadening of the electronic states is low
enough on the entire hBN-Gr-hBN area. In Figures 3a
and 3b, we show maps of ΓG at B = 0 T and 3.8 T,
respectively. On the hBN part, the width of the G line
shows the resonant behavior depicted in Figure 2c (see
also histogram in Figure 3d). This effect happens on all
spots on the hBN area, independent of the local dop-
ing and strain values and independent of possible local
folds and bubbles. The suppression of magneto-phonon
resonances on the SiO2 substrate can be attributed to
the higher charge carrier density. At higher charge car-
rier density the needed LL transitions are blocked by the
Pauli principle.
In a next step, we tune the magnetic
field to 8 T, where the electronic influences on the Ra-
man G line are at a minimum. A map of ΓG over the
entire flake at a magnetic field of 8 T is shown in Fig-
ure 3c. Distinct features across the whole sample are
visible as regions with increased line width. A compari-
son with a scanning force microscope image of the sample
(Figure 3e) reveals that many of these regions can be as-
sociated with folds and bubbles most likely induced dur-
ing the fabrication process, some of which even cross the
border between the underlying hBN and SiO2 substrate
regions.
As electronic broadening effects are suppressed at 8 T,
the increased line width of the G line in the vicinity of
these lattice deformations arises from enhanced phonon-
phonon scattering and/or an averaging effect over vary-
ing nm-scale strain conditions.
Interestingly, the same features can also be identified in
a Γ2D map recorded at B = 0 T, shown in Figure 3f. This
FIG. 2.
(color online) (a) Raman spectra recorded as a func-
tion of magnetic field, ranging from 0 T (bottom spectrum)
to 8.9 T (top spectrum). The spectra are vertically offset
for clarity. (b) and (c) Frequency, ωG, and FWHM, ΓG, of
the G peak as a function of magnetic field as obtained from
Lorentzian fits to the data shown in panel (a). The arrow in
panel (c) showcases a value of the magnetic field at which the
phonon is energetically matched to a LL transition. (d) Evo-
lution of the energies of LL transitions with magnetic field.
The full lines represent inter-band transitions in which the LL
index changes by one. The dashed lines represent inter-band
transitions in which the LL index does not change. The red
line represents the G mode phonon frequency at zero B field.
The circled region in (c) and (d) highlights the region in which
no LL transitions energetically match the G mode phonon.
nificant strain variations on both substrates across the
entire graphene layer. Assuming the strain to be of biax-
ial nature, the spread of the data points translates into
a maximum, micrometer-scale strain variation of about
0.14%28. The offset of the SiO2 and hBN data points can
be understood in terms of the higher charge carrier dop-
ing induced by the SiO2 substrate, which shifts the data
5, and differences in
points toward higher values of ωG
the dielectric screening of hBN and SiO2 that effectively
shift the 2D line position29. Since the data stems from
a single graphene flake that has undergone identical fab-
rication steps for both substrate regions, the difference
in charge carrier doping is unambiguously due the two
different substrate materials.
For a more refined comparison of the Raman spectra on
both substrates, we seek to suppress the effects on the G
line, arising from these differences in charge carrier dop-
ing. We therefore minimize the influence of the electronic
system on the Raman G line by applying a perpendicular
magnetic field. In the presence of a perpendicular mag-
netic field, the electronic states in graphene condense into
Landau levels (LLs). The coupling of these Landau levels
to the G mode is well understood18,19 and experimentally
confirmed21 -- 23,30 -- 35. When a LL transition energetically
102030158015851590-1ω (cm)G-1Γ (cm)GIntensity (a. u.)15801600(a)(b)(c)-1Raman shift (cm)B (T)100200300Energy (meV)0 024680(d)ωph24680 4
FIG. 3.
(color online) (a), (b), and (c) Raman maps of the FWHM of the G peak, ΓG, taken at different magnetic fields, i.e.
B = 0 T (a), 3.8 T (b), and 8 T (c), respectively. The different regions I and II (labeled in Figure 1a) can be well distinguished
in all three panels. (d) Histograms of ΓG for the different magnetic fields, B = 0 T (blue), 3.8 T (red), B = 8 T (gray) and
the two substrate substrates hBN (top panel) and SiO2 (bottom panel). (e) Scanning force microscope (SFM) image of the
investigated sample. (f) Raman map of Γ2D recorded at 0 T. The arrows highlight mechanical folds visible in the SFM image
as well as in the Raman maps (see panels (c), (e), and (f)).
strongly suggests that the lattice deformations identified
at 8 T in ΓG also cause a broadening of the 2D mode.
The same trend is highlighted in Fig. 4a, where we show
the relation of ΓG and Γ2D for all recorded Raman spec-
tra at 8 T. The additional teal data points stem from a
graphene-on-SiO2 sample and the orange star originates
from a different hBN-Gr-hBN sandwich structure with
all data having been obtained at 8 T. Notably, the points
from all substrate regions lie on one common line. From
this linear relation between Γ2D and ΓG (Figure 4a), we
conclude that there must be a common source of line
broadening, which is connected to structural deforma-
tions. This is mainly due to the fact that at 8 T the G-line
broadening is only very weakly affected by electronic con-
tributions (see above). The range of the presented scat-
ter plot can be extended by including data recorded on
low-quality graphene samples with significant doping, as
shown in Figure 4b. Here, no magnetic field but high dop-
ing (corresponding to Fermi energies much higher than
half of the phonon energy ¯hωph/2 ≈ 100 meV) is used
to suppress Landau damping of the G mode,
leaving
ΓG unaffected from electronic contributions. The col-
ored data points are from Raman maps (B = 0 T) of
CVD (chemical vapor deposition)-grown graphene flakes
that were transferred onto SiO2 by a wet chemistry-based
transfer. These graphene sheets contain doping values of
nel > 3 × 1012 cm−2, which corresponds to Fermi ener-
gies, EF > 200 meV (see suppl. material). The data
points show the same trend as the values obtained at 8 T
(gray data points in Figure 4b) and even extend the total
range of the dependence to higher values of Γ2D.
While the linear relation between ΓG and Γ2D in Fig-
ure 4a and 4b shows that structural deformations also
broaden the 2D line, it is less straightforward to identify
the actual mechanism of broadening. It is, in principle,
possible that the high values of Γ2D around folds and
bubbles are due to a combination of increased phonon-
phonon scattering, averaging effects over different strain
values within the laser spot and reduced electronic life
times. However, interestingly the slopes in Figures 4a
and 4b are around 2.2 (see black lines). This is a remark-
able resemblance to the strain induced frequency shifts
of both modes (compare Figure 1i). This provides very
strong indication that averaging over different strain val-
ues, which vary on a nanometer scale (see Fig. 4c), play
an important role in the broadening of the experimentally
observed 2D line. This averaging effect broadens the G
and 2D line by the same ratio as their peak positions shift
for fixed average strain values explaining the slope of 2.2
between ΓG and Γ2D (see Supplementary Information).
We are aware that the low charge carrier densities in the
hBN encapsulated area might result in a narrowing of the
2D mode by three to four wave numbers36. However, the
large differences of Γ2D on the order of 20-30 cm−1 on
both substrates cannot be explained by the differences in
charge carrier doping7,36,37.
hBN0T1020305152535 8T3.8Tcounts (a.u.)SiO20355B=0T1015202530-1Γ (cm)G-1Γ (cm)G(b)301020Γ (cm )2D-15 μmhBNHeight (nm)0206040B=3.8TB=8T(a)(c)(e)(f)(d)SiO2 5
FIG. 4.
(color online) (a) ΓG versus Γ2D recorded on various points on the hBN part (blue) and SiO2 (red) of the sample at a
magnetic field of 8 T. Additional data points from a graphene-on-SiO2 sample (teal) and a second hBN-Gr-hBN sample (orange
star) are shown. (b) The data points of panel (a) are depicted in gray. The colored data are recorded on four different CVD
graphene flakes on SiO2 substrate at 0 T. All four samples have doping values of nel > 3 × 1012, such that Landau damping of
the G line is suppressed. The dashed and dotted lines in panels (a) and (b) indicate the calculated values of Γ2D from DFT
calculations including electron-phonon and phonon-phonon broadening (dotted line) and electron-phonon, electron-eletron and
phonon-phonon broadening (dashed line).
large
variations, bottom: small variations). (d) Γ2D versus the integrated area of the 2D peak as obtained from single Lorentzian
fits for the hBN part (blue) and SiO2 (red) measured at 8 T. Both data clouds are scaled to an average area2D value of one.
(e) Similar plot as in panel (d) but for 0 T. The solid black line is the calculated dependence of Γ2D and area2D for varying
electronic broadening from the DFT calculations, specified in the text and in ref. 37. The dashed and dotted black lines are
the same as in panel (a) and (b).
(c) Two schematic illustrations of nanometer-scale strain variations (top:
Interestingly, the lowest Γ2D observed in our experi-
ments are very close to the value that we compute from
first-principles as in ref. 37 (see Supplementary Informa-
tion for details) assuming an undoped, defect-free and
stress-free sample of graphene (horizontal dashed and
dotted lines in Figures 4a and 4b). In such an approach,
the width of the 2D peak is determined by the anhar-
monic decay rate of the two phonons involved (5.3 cm-1
according to ref. 38), and, indirectly, by the broadening
of the electron and hole, denoted as γ in ref. 37, (see
also ref. 39). According to ref. 37, the electron-phonon
contribution to γ is 81.9 meV for electronic states in res-
onance with the 2.33 eV laser-light. With such a value of
γ we obtain a Γ2D of 12.1 cm1 (dotted lines in Figures 4a,
4b and 4e). If, following ref. 40, we double such value of γ
to account for the electron-electron scattering, we obtain
a Γ2D of 17.9 cm−1 (dashed lines in Figures 4a, 4b and
4e), in close agreement with the lowest measured values.
In principle, the observed increase of Γ2D with respect
to its minimum value could be attributed to an increase
of the electronic broadening γ, due to doping (increas-
ing the electron-electron scattering) or to the presence of
defects (increasing the electron-defect scattering)37,39,41.
By investigating the relation between Γ2D and the in-
tegrated area of the 2D peak (area2D) we can exclude
such a hypothesis. In Figures 4d and 4e we show scat-
ter plots of Γ2D versus the region-normalized area2D for
both B = 8 T and 0 T, highlighting the very weak B-
field dependence of Γ2D. More importantly, we observe
that the area of the 2D peak does not depend on Γ2D,
contrary to what is expected in presence of a variation
of the electronic broadening γ37,39,41. In particular the
measured data does not follow the calculated dependence
of Γ2D on area2D, reported in Fig. 4e, obtained in the
calculation by varying electronic broadening γ. This dis-
misses differences in the electronic broadening as a main
mechanism for the observed variations of Γ2D.
Finally, our finding that the 2D line depends on
nanometer-scale strain inhomogeneities is also in good
agreement with high resolution scanning tunneling mi-
croscopy measurements, which reveal that graphene on
SiO2 forms short-ranged corrugations, while graphene on
hBN features significantly more flat areas42.
In summary, we showed that by using a magnetic field
of 8 T to strongly suppress the influence of the electronic
contributions on the Raman G line width, the latter can
be used as a measure for the amount of nm-scale strain
variations. Most importantly, we observed a nearly linear
dependence between the G and 2D line widths at 8 T
independent of the substrate material, indicating that the
dominating source of the spread of the broadening of both
peaks is the same. From the slope ∆Γ2D/∆ΓG of around
2.2, we deduce that averaging effects over nanometer-
scale strain variations make a major contribution to this
B=8T203040505101520510152020304050(a)(b)-1Γ (cm)G-1Γ (cm)G-1Γ (cm)2D-1Γ (cm)2D00(c)2.2152025303540-1Γ (cm)2D-1Γ (cm)2D(d)(e)8T0T101000.511.52area (a.u.)2D00.511.52area (a.u.)2D1015202530354010 trend. Since the 2D line width shows only a very weak
dependence on the B field, this quantity can even be used
without a magnetic field to gain information on the local
strain homogeneity and thus on the structural quality of
graphene. These insights can be potentially very valuable
for monitoring graphene fabrication and growth processes
in research and industrial applications, where a fast and
non-invasive control of graphene lattice deformations is
6
of great interest.
ACKNOWLEDGMENT
We thank T. Khodkov for support during the measure-
ments. Support by the Helmholtz Nanoelectronic Facility
(HNF), the DFG, the ERC (GA-Nr. 280140) and the EU
project Graphene Flagship (contract no. NECT-ICT-
604391), are gratefully acknowledged. P.V. acknowledges
financial support from the Capes-Cofecub agreement.
1 K. S. Novoselov, V. Fal'ko, L. Colombo, P. Gellert,
M. Schwab, and K. Kim, Nature 490, 192 (2012).
2 A. Ferrari, J. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri,
F. Mauri, S. Piscanec, D. Jiang, K. Novoselov, S. Roth,
and A. Geim, Phys. Rev. Lett. 97, 187401 (2006).
3 D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen,
C. Hierold, and L. Wirtz, Nano Lett. 7, 238 (2007).
4 A. C. Ferrari, Solid State Commun. 143, 47 (2007).
5 J. Yan, Y. Zhang, P. Kim, and A. Pinczuk, Phys. Rev.
Lett. 98, 166802 (2007).
6 S. Pisana, M. Lazzeri, C. Casiraghi, K. S. Novoselov, A. K.
Geim, A. C. Ferrari, and F. Mauri, Nat. Mater. 6, 198
(2007).
7 C. Stampfer, F. Molitor, D. Graf, K. Ensslin, A. Jungen,
C. Hierold, and L. Wirtz, Appl. Phys. Lett. 91, 241907
(2007).
8 M. Mohr, J. Maultzsch, and C. Thomsen, Phys. Rev. B
82, 201409 (2010).
9 M. Huang, H. Yan, T. F. Heinz, and J. Hone, Nano Lett.
10, 4074 (2010).
21 C. Qiu, X. Shen, B. Cao, C. Cong, R. Saito, J. Yu, M. S.
Dresselhaus, and T. Yu, Phys. Rev. B 88, 165407 (2013).
22 J. Yan, S. Goler, T. D. Rhone, M. Han, R. He, P. Kim,
and A. Pinczuk, Phys. Rev. Lett. 105,
V. Pellegrini,
227401 (2010).
23 C. Neumann, S. Reichardt, M. Drogeler, B. Terr´es,
K. Watanabe, T. Taniguchi, B. Beschoten, S. V. Rotkin,
and C. Stampfer, Nano Lett. 15, 1547 (2015).
24 C. Faugeras, P. Kossacki, D. Basko, M. Amado, M. Sprin-
kle, C. Berger, W. A. de Heer, and M. Potemski, Phys.
Rev. B 81, 155436 (2010).
25 L. Wang, I. Meric, P. Huang, Q. Gao, Y. Gao, H. Tran,
T. Taniguchi, K. Watanabe, L. Campos, D. Muller, J. Guo,
P. Kim, J. Hone, K. Shepard, and C. Dean, Science 342,
614 (2013).
26 S. Engels, B. Terr´es, F. Klein, S. Reichardt, M. Goldsche,
S. Kuhlen, K. Watanabe, T. Taniguchi, and C. Stampfer,
physica status solidi (b) 251, 2545 (2014).
27 C. Casiraghi, S. Pisana, K. Novoselov, A. Geim,
and
A. Ferrari, Appl. Phys. Lett. 91, 233108 (2007).
10 I. Calizo, A. Balandin, W. Bao, F. Miao, and C. Lau,
28 J. E. Lee, G. Ahn, J. Shim, Y. S. Lee, and S. Ryu, Nat.
Nano Lett. 7, 2645 (2007).
11 A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Tewelde-
brhan, F. Miao, and C. N. Lau, Nano Lett. 8, 902 (2008).
12 M. Drogeler, F. Volmer, M. Wolter, B. Terr´es, K. Watan-
and
abe, T. Taniguchi, G. Guntherodt, C. Stampfer,
B. Beschoten, Nano Lett. 14, 6050 (2014).
13 C. Casiraghi, A. Hartschuh, H. Qian, S. Piscanec,
C. Georgi, A. Fasoli, K. Novoselov, D. Basko, and A. Fer-
rari, Nano Letters 9, 1433 (2009).
14 T. Mohiuddin, A. Lombardo, R. Nair, A. Bonetti,
G. Savini, R. Jalil, N. Bonini, D. Basko, C. Galiotis,
N. Marzari, et al., Phys. Rev. B 79, 205433 (2009).
15 J. Zabel, R. R. Nair, A. Ott, T. Georgiou, A. K. Geim,
K. S. Novoselov, and C. Casiraghi, Nano Lett. 12, 617
(2012).
16 D. Yoon, Y.-W. Son, and H. Cheong, Phys. Rev. Lett.
106, 155502 (2011).
17 N. J. Couto, D. Costanzo, S. Engels, D.-K. Ki, K. Watan-
abe, T. Taniguchi, C. Stampfer, F. Guinea, and A. F.
Morpurgo, Phys. Rev. X 4, 041019 (2014).
18 T. Ando, J. Phys. Soc. Jpn. 76, 024712 (2007).
19 M. Goerbig, J.-N. Fuchs, K. Kechedzhi, and V. I. Fal'ko,
Phys. Rev. Lett. 99, 087402 (2007).
20 O. Kashuba and V. I. Fal'ko, New J. Phys. 14, 105016
(2012).
Commun. 3, 1024 (2012).
29 F. Forster, A. Molina-Sanchez, S. Engels, A. Epping,
K. Watanabe, T. Taniguchi, L. Wirtz, and C. Stampfer,
Phys. Rev. B 88, 085419 (2013).
30 C. Faugeras, M. Amado, P. Kossacki, M. Orlita, M. Kuhne,
A. A. Nicolet, Y. I. Latyshev, and M. Potemski, Phys. Rev.
Lett. 107, 036807 (2011).
31 C. Faugeras, P. Kossacki, A. Nicolet, M. Orlita, M. Potem-
ski, A. Mahmood, and D. Basko, New J. Phys. 14, 095007
(2012).
32 C. Faugeras, M. Amado, P. Kossacki, M. Orlita, M. Sprin-
kle, C. Berger, W. A. De Heer, and M. Potemski, Phys.
Rev. Lett. 103, 186803 (2009).
33 P. Kossacki, C. Faugeras, M. Kuhne, M. Orlita, A. Mah-
mood, E. Dujardin, R. Nair, A. Geim, and M. Potemski,
Phys. Rev. B 86, 205431 (2012).
34 Y. Kim, J. Poumirol, A. Lombardo, N. Kalugin, T. Geor-
giou, Y. Kim, K. Novoselov, A. Ferrari, J. Kono,
O. Kashuba, V. Fal'ko, and D. Smirnov, Phys. Rev. Lett.
110, 227402 (2013).
35 P. Leszczynski, Z. Han, A. A. Nicolet, B. A. Piot, P. Kos-
sacki, M. Orlita, V. Bouchiat, D. M. Basko, M. Potemski,
and C. Faugeras, Nano Lett. 14, 1460 (2014).
36 S. Berciaud, X. Li, H. Htoon, L. E. Brus, S. K. Doorn,
and T. F. Heinz, Nano Lett. 13, 3517 (2013).
37 P. Venezuela, M. Lazzeri, and F. Mauri, Phys. Rev. B 84,
035433 (2011).
38 L. Paulatto, F. Mauri, and M. Lazzeri, Phys. Rev. B 87,
214303 (2013).
40 F. Herziger, M. Calandra, P. Gava, P. May, M. Lazzeri,
F. Mauri, and J. Maultzsch, Phys. Rev. Lett. 113, 187401
(2014).
41 D. M. Basko, S. Piscanec, and A. Ferrari, Phys. Rev. B
39 D. M. Basko, Phys. Rev. B 78, 125418 (2008).
80, 165413 (2009).
42 C.-P. Lu, G. Li, K. Watanabe, T. Taniguchi, and E. Y.
Andrei, Phys. Rev. Lett. 113, 156804 (2014).
7
|
1110.5702 | 1 | 1110 | 2011-10-26T04:49:11 | Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate | [
"cond-mat.mes-hall"
] | Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides potential system to overcome these challenges. Recent theoretical and experimental studies have provided conflicting results: while theoretical studies suggested a possibility of a finite bandgap of graphene on hBN, recent experimental studies find no bandgap. Using the first-principles density functional method and the many-body perturbation theory, we have studied graphene on hBN substrate. A Bernal stacked graphene on hBN has a bandgap on the order of 0.1 eV, which disappears when graphene is misaligned with respect to hBN. The latter is the likely scenario in realistic devices. In contrast, if graphene supported on hBN is hydrogenated, the resulting system (graphone) exhibits bandgaps larger than 2.5 eV. While the bandgap opening in graphene/hBN is due to symmetry breaking and is vulnerable to slight perturbation such as misalignment, the graphone bandgap is due to chemical functionalization and is robust in the presence of misalignment. The bandgap of graphone reduces by about 1 eV when it is supported on hBN due to the polarization effects at the graphone/hBN interface. The band offsets at graphone/hBN interface indicate that hBN can be used not only as a substrate but also as a dielectric in the field effect devices employing graphone as a channel material. Our study could open up new way of bandgap engineering in graphene based nanostructures. | cond-mat.mes-hall | cond-mat |
Quasiparticle bandgap engineering of graphene and
graphone on hexagonal boron nitride substrate
Neerav Kharche∗,†,¶ and Saroj K. Nayak∗,‡
Computational Center for Nanotechnology Innovations, Rensselaer Polytechnic Institute, Troy,
NY 12180, USA, and Department of Physics, Applied Physics and Astronomy, Rensselaer
Polytechnic Institute, Troy, NY 12180, USA
E-mail: kharcn@rpi.edu; nayaks@rpi.edu
Abstract
Graphene holds great promise for post-silicon
electronics, however, it faces two main challenges:
opening up a bandgap and finding a suitable sub-
strate material. In principle, graphene on hexago-
nal boron nitride (hBN) substrate provides poten-
tial system to overcome these challenges. Recent
theoretical and experimental studies have pro-
vided conflicting results: while theoretical stud-
ies suggested a possibility of a finite bandgap of
graphene on hBN, recent experimental studies
find no bandgap. Using the first-principles density
functional method and the many-body perturba-
tion theory, we have studied graphene on hBN
substrate. A Bernal stacked graphene on hBN has
a bandgap on the order of 0.1 eV, which disap-
pears when graphene is misaligned with respect
to hBN. The latter is the likely scenario in real-
In contrast, if graphene supported
istic devices.
on hBN is hydrogenated,
the resulting system
(graphone) exhibits bandgaps larger than 2.5 eV.
While the bandgap opening in graphene/hBN is
due to symmetry breaking and is vulnerable to
slight perturbation such as misalignment, the gra-
∗To whom correspondence should be addressed
†Computational Center for Nanotechnology Innovations,
Rensselaer Polytechnic Institute, Troy, NY 12180, USA
‡Department of Physics, Applied Physics and Astron-
omy, Rensselaer Polytechnic Institute, Troy, NY 12180,
USA
¶Department of Physics, Applied Physics and Astron-
omy, Rensselaer Polytechnic Institute, Troy, NY 12180,
USA
phone bandgap is due to chemical functionaliza-
tion and is robust in the presence of misalignment.
The bandgap of graphone reduces by about 1 eV
when it is supported on hBN due to the polariza-
tion effects at the graphone/hBN interface. The
band offsets at graphone/hBN interface indicate
that hBN can be used not only as a substrate but
also as a dielectric in the field effect devices em-
ploying graphone as a channel material. Our study
could open up new way of bandgap engineering in
graphene based nanostructures.
KEYWORDS:
graphene,
hexagonal boron nitride, GW, polarization, non-
local screening, bandgap renormalization
Functionalized
Graphene exhibits remarkable electronic proper-
ties compared to the conventional materials such
as Si and III-Vs making it an attractive material
for next generation electronic devices.1 For practi-
cle applications, devices made from an atomically
thin material such as graphene should be supported
on a substrate. Typically graphene devices are fab-
ricated on SiO2 substrate, however, carrier mobil-
ity in graphene on SiO2 reduces due to charged
surface states, surface roughness, and surface opti-
cal phonons in SiO2.2,3 Several other oxide-based
substrates have been investigated so far, how-
ever, none yields significant improvement over
SiO2.3 Recently, graphene supported on a hexago-
nal boron nitride (hBN) substrate was found to ex-
hibit much higher mobility compared to any other
1
substrate.4,5 High mobility of graphene on hBN is
enabled by extremely flat surface of hBN and ab-
scence of dangling bonds at the graphene/hBN in-
terface.5
Another important challenge for the use of
graphene in devices is the lack of controllable
bandgap.1 A bandgap can be opened through
quantum confinement by patterning graphene into
the so-called graphene nano-ribbons (GNRs).6,7
However,
it is difficult to control the bandgap
in GNRs due to its sensitivity to the width and
edge geometry.7 Alternatively, the bandgap can be
opened by chemical functionalization of graphene
with a variety of species such as H, F, OH,
etc.8 The hybridization of the functionalized C
atom changes from sp2 to sp3, which opens up
a bandgap. The bandgap opened by this mecha-
nism is expected to be more robust in the presence
of disorder compared to the bandgap opened by
the quantum confinement.9 The bandgap opening
by H-functionalization/hydrogenation of graphene
has been a subject of several recent experimen-
tal and theoretical studies, which show that the
bandgap of graphene can be tuned by controlling
the degree of hydrogenation.10 -- 14
Here we report
the electronic structure of
graphene and single-sided hydrogenated graphene
(graphone) supported on the hBN substrate calcu-
lated using the first-principles density functional
method and the many-body perturbation theory
in the GW approximation,
the state-of-the-art
method for accurate predictions of the electronic
structure. Theoretical studies have suggested a
possibility of inducing a bandgap in graphene
when supported on the hBN substrate,15 how-
ever, recent experimental studies find no bandgap
in this system.4,5 Earlier calculations based on
the tight-binding model ascribe this discrepancy
to the random stacking arrangement of graphene
on hBN.5 The tight-binding model can not be
reliably used for quantitative predictions involv-
ing novel materials such as graphene on hBN
especially because the interlater hopping param-
eters between graphene and hBN are not known.
First-principles calculations are therefore required
for accurate prediction of electronic structure of
such novel material systems. Our calculations
show that slight misalignment of graphene closes
the bandgap induced by hBN in Bernal stacked
graphene. We consider hydrogenation as an alter-
native to induce bandgap in graphene supported
on hBN. Hydrogenation of a substrate supported
graphene results in 50% hydrogen coverage16 and
the resulting material is called as graphone.8,13
Free standing graphone exhibits a bandgap larger
than 2.5 eV.
Interestingly, the bandgap of gra-
phone reduces by about 1 eV due to the substrate
induced polarization effects17 -- 20 when it is sup-
ported on hBN. However, unlike graphene, the
bandgap of graphone is unaffected by the mis-
alignment with respect to hBN. The band offsets
at graphone/hBN interface suggest that hBN can
be used not only as a substrate but also as a dielec-
tric in the field effect devices employing graphone
as a channel material.
The electronic structure calculations are per-
formed in the framework of density functional the-
ory (DFT) within the local density approximation
(LDA) as implemented in the ABINIT code.21 The
Trouiller-Martins norm-conserving pseudopoten-
tials22 and the Teter-Pade parameterization for the
exchange-correlation functional23 are used. To en-
sure negligible interaction between periodic im-
ages, a large value (10 Å) of the vacuum re-
gion is used. The Brillouin zone is sampled us-
ing Monkhorst-Pack meshes of different size de-
pending on the size of the unit cell: 18 × 18 × 1
for Bernal stacked graphene on hBN, 6 × 6 × 1
for misaligned graphene on hBN, 18× 18× 1 for
chair-graphone, and 8 × 8× 1 for boat-graphone.
For the plane wave expansion of the wavefunc-
tion, a 30 Ha kinetic energy cut-off is used. The
quasiparticle corrections to the LDA bandstructure
are calculated within the G0W0 approximation and
the screening is calculated using the plasmon-pole
model.24
The Vienna ab initio simulation package
(VASP),25 which provides well-tested implemen-
tation of van der Waals interactions (vdW),26
is used to compute the equilibrium distance be-
tween graphene (or graphone) and hBN. The PAW
pseudopotentials,27 the PBE exchange-correlation
functional in the GGA approximation,28 and the
DFT-D2 method of Grimme29 are used. Same
values of energy cutoff, vacuum region, and k-
point grid as in the ABINIT calculations are used
in VASP calculations. The optimized geometries
calculated using VASP and ABINIT without in-
2
graphene supported on hBN show no evidence
of bandgap.4,5 The perfect Bernal stacking of
graphene on hBN is difficult to achieve in the ex-
periments and random orientation is more proba-
ble. To mimic the random orientation, we simu-
late larger supercells where the stacking between
the graphene layer and the underlying hBN sub-
strate deviates from the ideal Bernal stacking. To
reduce the computational requirements only one
layer of hBN is included. In the Bernal stacking,
the graphene layer is rotated by an angle θ = 30◦
with respect to hBN. We consider three rotation
angles 21.8◦, 32.2◦, and 13.2◦. The commensu-
rate supercells for these rotations contain 28 (14
C, 7 B, 7 N), 52 (26 C, 13 B, 13 N), and 76 (38
C, 19 B, 19 N) atoms respectively. The super-
cell for 21.8◦ rotation is depicted in the inset of
Figure [figure][1][]1(b). The remaining two su-
percells and the Brillouin zones of all three su-
percells are shown in the supplementary material.
The commensuration conditions derived in30 are
used to generate the supercells. In these supercells,
the sublattice asymmetry induced by the hBN sub-
strate on the graphene layer is significantly re-
duced compared to the Bernal stacking.
The LDA density of states of the misaligned
graphene (θ = 21.8◦) is compared with that
of the Bernal stacked graphene in Figure [fig-
ure][1][]1(b). The Bernal stacked graphene has
a finite bandgap, which closes due to the slight
misalignment. Since LDA is known to under-
estimate the bandgap, we have calculated the
GW corrections to the bandgap of misaligned
graphene. The GW corrected bandgap of the
Bernal stacked graphene increases from ELDA
g =
68 meV to EGW
g = 145 meV while the GW cor-
rected bandgap of the misaligned graphene re-
mains 0. The GW bandgaps for rotations 32.2◦
and 13.2◦ are also 0. The Moiré patterns larger
than those shown in Figure [figure][1][]1(b) were
recently observed in graphene supported on hBN.5
These graphene samples indeed showed 0 bandgap
similar to our calculations.
The above calculations indicate that due to mis-
alignment hBN substrate can not reliably induce
a bandgap in graphene and alternative approaches
are required to open up a sizable bandgap. Recent
experimental measurements and theoretical calcu-
lations show that the bandgaps on the order of 1 eV
Figure 1: (a) The LDA and GW bandstructures of
Bernal stacked graphene on hBN substrate. The
inset shows a small bandgap opening at the K
point. (b) Bandgap closing due to misalignment
illusrated by the LDA density of states and GW
bandgaps of the heterogeneous bilayer of graphene
and hBN in perfect Bernal and misaligned stack-
ing arrangements.
The inset shows atomistic
schematic of a commensurate unit cell of the mis-
aligned bilayer.
cluding vdW interactions are found to agree well
with each other.
Figure [figure][1][]1(a) shows LDA and GW
bandstructures of Bernal stacked graphene on hBN
substrate such that half of the C atoms in graphene
are positioned exactly above the B atoms. This
stacking arrangement has been found to be low-
est energy configuration.15 The equlibrium dis-
tance between graphene and hBN is 3.14 Å. Three
monolayers of the semi-infinite hBN substrate are
included in the simulation domain to ensure that
the GW bandgap is converged. The bands con-
tributed by hBN are identified separately. The
weak interlayer interaction between graphene and
hBN allows graphene to retain its linear bandstruc-
ture near the K point. Underlying hBN substrate
induces sublattice asymmetry on the graphene lat-
tice opening up a small bandgap at the K point as
shown in the inset of Figure [figure][1][]1(a). The
LDA bandgap is smaller by about 0.1 eV com-
pared to the GW corrected bandgap.
Contrary to the above conclusion and earlier the-
oretical studies, recent transport measurements on
3
−1−0.500.5100.010.020.030.04DOS (/eV.Atom)E−EF (eV)MisalignedBernalEg (LDA) = 32 meV Eg (GW) = 102 meVEg (LDA/GW) = 0(b)BNCKΓMK−5−4−3−2−1012345E−EF (eV)−101 K ΓEg (GW)= 166 meVGWLDA(a) orbing hydrogen from one side of graphane.31,32
The hybridization of C atom changes from sp2 to
sp3 upon hydrogenation and the planar structure of
graphene becomes non-planar as depicted in Fig-
ure [figure][2][]2.
Graphene is weakely bonded to hBN by van
der Waals interaction and the frontier orbitals of
graphene, which take part in bonding with hydro-
gen are virtually unaffected by hBN. Therefore
the stable configurations of graphone are likely
to be unaffected by hBN. Indeed, the optimized
atomic structures of graphone on hBN are virtu-
ally identical to earlier studies,8,13,16 which did
not include any substrate. The situation is differ-
ent with the substrates, which have stronger inter-
action with graphene. For example, graphene on
Ir(111) substrate exhibits specific hydrogenation
patterns based on the local orientation of graphene
with respect to Ir(111) surface.10 Hydrogen atoms
may desorb or diffuse through graphone into the
hBN substrate at elevated temperatures thereby af-
fecting the local electronic struture of graphone.
However, such phenomena require in depth analy-
sis using methods such as the molecular dynamics
and are out of the scope of the present work.
Chair and boat-graphone exhibit very different
electronic and magnetic properties as evident from
their bandstructures (Figure [figure][2][]2). The
ground state of chair-graphone is ferromagnetic
while boat-graphone has a nonmagnetic ground
state.
The bandstructure of chair-graphone is
highly spin polarized with a spin splitting of
2.79 eV, which is also its bandgap. This fea-
ture makes chair-graphone an attractive material
for spintronics.8 Boat-graphone has a spin de-
generate bandstructure and behaves as an insu-
lator with a large bandgap of 5.15 eV. Hydro-
gen atoms may migrate over the graphone lattice
resulting in the combination of chair- and boat-
configurations. In such structures magnetic order-
ing of chair-graphone may not be preserved. The
bandgap is, however, expected to persist.9
The electronic structure of an atomically thin
material such as graphone, when it is used in de-
vices, is expected to be highly dependent on the
surrounding materials. The atomistic schemat-
ics of graphone supported on hBN substrate and
calculated bandstructures of graphone-hBN super-
cells are shown in Figure [figure][3][]3. The gra-
Figure 2: Atomistic schematics and bandstructures
of graphone in (a) chair and (b) boat conforma-
tions. Unit cells are depicted by the dotted lines in
the top views of atomistic schematics while Bril-
louin zones are shown in the insets of bandstruc-
ture plots.
can be opened up in hydrogenated graphene.10 -- 13
Furthermore, the bandgap can be tuned by con-
trolling the degree of hydrogenation. Now, the
question arises, what is the effect of hBN sub-
strate on the electronic structure of hydrogenated-
graphene? To address this issue, we consider
single-sided semi-hydrogenated graphene, which
is referred to as graphone.13 Recent experimental
and theoretical study has shown that hydrogena-
tion of a substrate supported graphene results in
50% hydrogen coverage,16 which we have used
for the present study. Graphone has two distinct
configurations chair (Figure [figure][2][]2(a)) and
boat (Figure [figure][2][]2(b)), depending on the
relative placement of hydrogenated C atoms. Both
chair and boat configurations are energetically sta-
ble8,13,16 and they can be synthesized by differ-
ent hydrogenation processes. A direct single-sided
hydrogenation of graphene is likely to result in
boat-graphone, which is more stable compared
to chair-graphone.8,16 On the other hand, chair-
graphone can be synthesized by selectively des-
4
KΓMK−5−4−3−2−1012345E−EF (eV) ΓM1RΓM2 −5−4−3−2−1012345E−EF (eV)2.79 eV5.15 eVGWGW LDA LDAGW LDA(b)(a)ГMKГM1M2RCH expected in hydrogenated graphene with different
hydrogen coverage. The bandgaps of GNRs are
also reduced when they are supported on hBN sub-
strate.33 Non-local polarization effects can not be
modeled in the LDA. The GW approach includes
non-local polarization effects through the screened
Coulomb interaction, however, it tends to be com-
putationally extremely demanding.
j; f ree + ∆Pj where EGW
The bandgap reduction due to hBN substrate
polarization can be estimated by using com-
putationally much less demanding image-charge
model.20 In this model,
the quasiparticle en-
ergy of a substrate-supported layer is given by
EQP
j;supported = EGW
j; f ree is the
quasiparticle GW energy of state j(cid:105) of free stand-
ing layer, graphone in this case, and ∆Pj is the cor-
rection due to substrate polarization. The quasi-
particle bandgaps of chair and boat-graphone esti-
mated using the image-charge model are 2.03 eV
and 4.36 eV respectively, which compare well
with the bandgaps obtained using computationally
extensive GW calculations including hBN sub-
strate (Figure [figure][3][]3). The details of image-
charge model calculations and underlying assump-
tions are discussed in the supplemental material.
In addition to the bandgaps, the band offsets
are of crucial importance for the successful use
of a heterostructure in the electronic devices. As
an illustration, we analyse the conduction and
valence band offsets, denoted by ∆Ec and ∆Ev,
respectively, at the chair-graphone/hBN interface
when hBN is placed on both the hydrogenated
and non-hydrogenated sides of graphone. Fig-
ure [figure][4][]4(b) shows a schematic depict-
ing the calculated band offsets in the hBN/chair-
graphone/hBN heterostructure. Three monolayers
of hBN are included on either sides of graphone.
The band offsets do not change when more than 3
monolayers of hBN are included.
The bandgap of chair-graphone on hBN reduces
from 1.93 eV (Figure [figure][3][]3) to 1.74 eV in
the presence of hBN on the hydrogenated side of
graphone. This is due to the additional reduction
of screened Coulomb interaction induced by the
polarization of hBN layers on the hydrogenated
side. The band offsets at chair-graphone/hBN
interfaces are asymmetric such that
the bands
of hBN on the hydrogenated side of graphone
are lower in energy compared to the bands of
Figure 3: Atomistic schematics and bandstructures
of (a) chair-graphone and (b) boat-graphone sup-
ported on hBN substrate. The substrate polar-
ization induced renormalization of energy levels
reduces the bandgap of substrate-supported gra-
phone compared to the free-standing graphone.
phone LDA bands in the vicinity of the valence-
band maximum and the conduction-band mini-
mum remain unaffected by the presence of hBN
The shape of GW-corrected bands
substrate.
remains more or less unaffected, however,
the
bandgap of chair and boat-graphone when sup-
ported on hBN substrate reduces by 0.86 eV and
0.72 eV respectively compared to the bandgap of
their free-standing counterparts.
The reduction in GW bandgap is attributed to
the polarization effects at the graphone/hBN in-
terface. Similar reductions have been found in
experiments and GW calculations for several dif-
ferent molecules adsorbed on metals, semicon-
ductors, and insulators.17 -- 20 Careful inspection of
Figures [figure][2][]2 and [figure][3][]3 indicates
that the GW corrections to the LDA bands are
smaller in graphone on hBN compared to those in
free standing graphone. This is because of the fact
that the polarization of hBN substrate reduces the
screened Coulomb potential, W , which in turn re-
duces the GW bandgap. Similar bandgap reduc-
tion due to the polarization of hBN substrate is
5
−5−4−3−2−1012345E−EF (eV)−5−4−3−2−1012345E−EF (eV)1.93 eV4.43 eV(b)(a)KΓMKΓM1RΓM2CHBNdC-BN = 3.13 ÅdC-BN = 3.14 ÅGWGW LDA LDA degrading the performance of the field-effect de-
vice.35 On the contrary, when hBN is placed on
the hydrogenated side of graphone, it has suffi-
ciently high barriers for both electrons (∆Ec) and
holes (∆Ev) to prevent their thermionic emission
into the hBN dielectric layer.
that
In summary, our first-principles calculations
suggest
in a Bernal stacked graphene on
hBN substrate a bandgap on the order of 0.1 eV
opens up due to the sublattice asymmetry in
graphene induced by hBN. This bandgap closes
in the presence of slight misorientation from the
Bernal stacking. Hydrogenation of graphene pro-
vides a promising approach to open up bandgaps
larger than 2.5 eV. The polarization effects due
to surrounding hBN dielectrics, however, reduce
bandgaps of graphone by about 1 eV. Thus, accu-
rate electronic structure calculations of the atom-
ically thin materials such as graphone should al-
ways take into account the surrounding materi-
als. The calculated band offsets suggest that in
the field effect devices employing chair-graphone
as a channel material, hBN can be used as a sub-
strate as well as a dielectric layer separating the
graphone channel and the gate electrode. Bandgap
engineering of graphene by chemical functional-
ization is currently an extremely active area of re-
search and this work provides theoretical instruc-
tion for analyzing the experimental observations
such as the electronic structure modulation by the
substrate.
Acknowledgement
We thank Prof. Timothy Boykin, Prof. Mathieu
Luisier, and Prof. Gerhard Klimeck for helpful
discussions. This work is supported partly by the
Interconnect Focus Center funded by the MARCO
program of SRC and State of New York, NSF
PetaApps grant number 0749140, and an anony-
mous gift from Rensselaer. Computing resources
of the Computational Center for Nanotechnology
Innovations at Rensselaer partly funded by State
of New York and of nanoHUB.org funded by the
National Science Foundation have been used for
this work.
Figure 4: Band offsets of chair-graphone em-
bedded in hBN layers.
(a) A supercell contain-
ing 3 monolayers of hBN on both sides of chair-
graphone. The direction of electric field induced
by the dipoles in graphone layer is indicated by an
arrow. (b) Band offsets at the graphone/hBN inter-
faces.
hBN on the non-hydrogenated side. To investi-
gate the origin of this asymmetry, we carried out
Bader charge analysis of a free standing chair-
graphone.
In chair-graphone, the hydrogenated
C-atoms aquire a slight net positive charge while
the non-hydrogenated C-atoms aquire a slight net
negative charge creating a dipole layer with an
electric field depicted by a thick grey arrow in
Figure [figure][4][]4(a). This electric field causes
asymmetry in the band offsets at graphone/hBN
interfaces. Similar modifications of the band off-
sets have been found in conventional semiconduc-
tor homo- and heterojunctions when a dipole layer
is inserted at the interface.34
In field effect devices employing chair-graphone
as channel material, hBN can be used as a sub-
strate as well as a dielectric layer separating the
gate electrode and the graphone channel. The band
diagrams in Figure [figure][4][]4(b) indicate that
hBN can be placed on either side of graphone
when used as a substrate. When hBN is used as
a dielectric layer, however, it should be placed
on the hydrogenated side and not on the non-
hydrogenated side of graphone. This is because
of the fact that when hBN is placed on the non-
hydrogenated side of graphone, ∆Ev at the inter-
face is too low (< 1 eV) to prevent the thermionic
emission of holes into the hBN dielectric layer,
which consequently results in gate leakage current
6
SubstrateDielectric{{−3−2−1012345E-EF (eV)Graphoneh−BNSubstrateh−BNDielectric1.741.700.852.162.92(b)Edipole(a) References
(1) Schwierz, F. Graphene transistors. Nature
Nanotech. 2010, 5, 487 -- 496.
(2) Chen, J.-H.; Jang, C.; Xiao, S.; Ishigami, M.;
Fuhrer, M. S. Intrinsic and extrinsic perfor-
mance limits of graphene devices on SiO2.
Nature Nanotech. 2008, 3, 206 -- 209.
(3) Ponomarenko, L. A. et al. Effect of a High-
kappa Environment on Charge Carrier Mo-
bility in Graphene. Phys. Rev. Lett. 2009,
102, 206603.
(4) Dean, C. R. et al. Boron nitride substrates
for high-quality graphene electronics. Nature
Nanotech. 2010, 5, 722 -- 726.
(5) Xue, J. et al. Scanning tunnelling microscopy
and spectroscopy of ultra-flat graphene on
hexagonal boron nitride. Nature Mater. 2011,
10, 282 -- 285.
(6) Han, M. Y.; Oezyilmaz, B.; Zhang, Y.;
Kim, P. Energy band-gap engineering of
graphene nanoribbons. Phys. Rev. Lett. 2007,
98, 206805.
(7) Son, Y.-W.; Cohen, M. L.; Louie, S. G. En-
ergy gaps in graphene nanoribbons. Phys.
Rev. Lett. 2006, 97, 216803.
(8) Li, L. et al. Functionalized Graphene for
High-Performance Two-Dimensional Spin-
tronics Devices. ACS Nano 2011, 5, 2601 --
2610.
(9) Abanin, D. A.; Shytov, A. V.; Levitov, L. S.
Peierls-Type Instability and Tunable Band
Gap in Functionalized Graphene. Phys. Rev.
Lett. 2010, 105, 086802.
(10) Balog, R. et al. Bandgap opening in graphene
induced by patterned hydrogen adsorption.
Nature Mater. 2010, 9, 315 -- 319.
(11) Haberer, D. et al. Tunable Band Gap in Hy-
drogenated Quasi-Free-standing Graphene.
Nano Lett. 2010, 10, 3360 -- 3366.
(12) Elias, D. C. et al. Control of Graphene's
Properties by Reversible Hydrogenation: Ev-
idence for Graphane. Science 2009, 323,
610 -- 613.
(13) Zhou, J. et al. Ferromagnetism in Semihydro-
genated Graphene Sheet. Nano Lett. 2009, 9,
3867 -- 3870.
(14) Fiori, G. et al. Simulation of hydrogenated
graphene field-effect transistors through a
multiscale approach. Phys. Rev. B 2010, 82,
153404.
(15) Giovannetti, G.;
Khomyakov, P. A.;
Brocks, G.; Kelly, P. J.; van den Brink, J.
Substrate-induced band gap in graphene on
hexagonal boron nitride: Ab initio density
functional calculations. Phys. Rev. B 2007,
76, 073103.
(16) Subrahmanyam, K. S. et al. Chemical stor-
age of hydrogen in few-layer graphene. Proc.
Natl. Acad. Sci. USA 2011, 108, 2674 -- 2677.
(17) Neaton, J. B.; Hybertsen, M. S.; Louie, S. G.
Renormalization of molecular electronic lev-
els at metal-molecule interfaces. Phys. Rev.
Lett. 2006, 97, 216405.
(18) Thygesen, K. S.; Rubio, A. Renormalization
of Molecular Quasiparticle Levels at Metal-
Molecule Interfaces: Trends across Binding
Regimes. Phys. Rev. Lett. 2009, 102, 046802.
(19) Freysoldt, C.; Rinke, P.; Scheffler, M. Con-
trolling Polarization at Insulating Surfaces:
Quasiparticle Calculations for Molecules
Adsorbed on Insulator Films. Phys. Rev. Lett.
2009, 103, 056803.
(20) Li, Y.; Lu, D.; Galli, G. Calculation of
Quasi-Particle Energies of Aromatic Self-
Assembled Monolayers on Au(111). J.
Chem. Theory Comput. 2009, 5, 881 -- 886.
(21) Gonze, X. et al. ABINIT: First-principles
approach to material and nanosystem prop-
erties. Computer Physics Communications
2009, 180, 2582 -- 2615.
7
(33) Jiang, X.; Kharche, N.; Nayak, S. K. (to be
published).
(34) Pan, M. et al. Modification of band offsets by
a ZnSe intralayer at the Si/Ge(111) interface.
Appl. Phys. Lett. 1998, 72, 2707 -- 2709.
(35) Robertson, J. Band offsets of wide-band-gap
oxides and implications for future electronic
devices. J. Vac. Sci. Technol. B 2000, 18,
1785 -- 1791.
(22) Troullier, N.; Martins, J. L. Efficient pseu-
dopotentials for plane-wave calculations.
Phys. Rev. B 1991, 43, 1993 -- 2006.
(23) Goedecker, S.; Teter, M.; Hutter, J. Separable
dual-space Gaussian pseudopotentials. Phys.
Rev. B 1996, 54, 1703 -- 1710.
(24) Hybertsen, M. S.; Louie, S. Electron correla-
tion in semiconductors and insulators: Band
gaps and quasiparticle energies. Phys. Rev. B
1986, 34, 5390 -- 5413.
(25) Kresse, G.; Furthmüller, J. Efficiency of ab-
initio total energy calculations for metals and
semiconductors using a plane-wave basis set.
Computational Materials Science 1996, 6,
15 -- 50.
(26) Bucko, T.; Hafner,
J.;
Lebegue, S.;
Angyan, J. G.
Improved Description of
the Structure of Molecular and Layered
Crystals: Ab Initio DFT Calculations with
van der Waals Corrections. Journal of Physi-
cal Chemistry A 2010, 114, 11814 -- 11824.
(27) Kresse, G.; Joubert, D. From ultrasoft pseu-
dopotentials to the projector augmented-
wave method. Phys. Rev. B 1999, 59, 1758 --
1775.
(28) Perdew, J.; Burke, K.; Ernzerhof, M. Gener-
alized gradient approximation made simple.
Phys. Rev. Lett. 1996, 77, 3865 -- 3868.
(29) Grimme, S. Semiempirical GGA-type den-
sity functional constructed with a long-range
dispersion correction. Journal of Computa-
tional Chemistry 2006, 27, 1787 -- 1799.
(30) Shallcross, S.; Sharma, S.; Pankratov, O. A.
Quantum interference at the twist bound-
ary in graphene. Phys. Rev. Lett. 2008, 101,
056803.
(31) Sofo, J. O.; Chaudhari, A. S.; Barber, G. D.
Graphane: A two-dimensional hydrocarbon.
Phys. Rev. B 2007, 75, 153401.
(32) Zhou, J.; Wu, M. M.; Zhou, X.; Sun, Q.
Tuning electronic and magnetic properties
of graphene by surface modification. Appl.
Phys. Lett. 2009, 95, 103108.
8
|
1712.03238 | 2 | 1712 | 2018-02-06T19:46:28 | Fibonacci Topological Superconductor | [
"cond-mat.mes-hall",
"cond-mat.str-el"
] | We introduce a model of interacting Majorana fermions that describes a superconducting phase with a topological order characterized by the Fibonacci topological field theory. Our theory, which is based on a $SO(7)_1/(G_2)_1$ coset factorization, leads to a solvable one dimensional model that is extended to two dimensions using a network construction. In addition to providing a description of the Fibonacci phase without parafermions, our theory predicts a closely related "anti-Fibonacci" phase, whose topological order is characterized by the tricritical Ising model. We show that Majorana fermions can split into a pair of Fibonacci anyons, and propose an interferometer that generalizes the $Z_2$ Majorana interferometer and directly probes the Fibonacci non-Abelian statistics. | cond-mat.mes-hall | cond-mat |
Fibonacci Topological Superconductor
Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104
Yichen Hu and C. L. Kane
We introduce a model of interacting Majorana fermions that describes a superconducting phase
with a topological order characterized by the Fibonacci topological field theory. Our theory, which
is based on a SO(7)1/(G2)1 coset factorization, leads to a solvable one dimensional model that is
extended to two dimensions using a network construction. In addition to providing a description
of the Fibonacci phase without parafermions, our theory predicts a closely related "anti-Fibonacci"
phase, whose topological order is characterized by the tricritical Ising model. We show that Majorana
fermions can split into a pair of Fibonacci anyons, and propose an interferometer that generalizes
the Z2 Majorana interferometer and directly probes the Fibonacci non-Abelian statistics.
Current interest in topological quantum phases is
heightened by the proposal to use them for quantum
information processing[1, 2] and by prospects for real-
izing them in experimentally viable electronic systems.
There is growing evidence that the fractional quantum
Hall (QH) state at filling ν = 5/2 is a non-Abelian
state[3–7] with Ising topological order. A simpler form
of Ising order is predicted in topological superconductors
(T-SC)[8, 9] and in SC proximity effect devices[10–14].
In these systems the Ising σ particle is not dynamical,
but is associated with domain walls or vortices that host
gapless Majorana fermion modes. Recent experiments
have found promising evidence for Majorana fermions in
1D and 2D SC systems[15–17].
Ising topological order is insufficient for universal
quantum computation, but the richer Fibonacci topolog-
ical order is sufficient[18]. Fibonacci order arises in the
Z3 parafermion state introduced by Read and Rezayi[19],
which is a candidate for the fractional QH state at
ν = 12/5. Parafermions can also be realized by com-
bining SC with the fractional QH effect[20–24]. This line
of inquiry culminated in the tour de force works[25, 26]
that showed a ν = 2/3 QH state, appropriately proximi-
tized, could exhibit a Fibonacci phase.
In this paper we introduce a different formulation of
the Fibonacci phase based on a model of interacting Ma-
jorana fermions. Our starting point is a system of chiral
Majorana edge states, which can in principle be realized
in SC proximity effect structures. We show that a par-
ticular four fermion interaction leads to an essentially
exactly solvable model that realizes the Fibonacci phase.
In addition to providing a direct route to the Fibonacci
phase without parafermions, our theory reveals a distinct
but closely related "anti-Fibonacci" state that is a kind
of particle-hole conjugate to the Fibonacci state with a
topological order that combines Ising and Fibonacci. Our
formulation also suggests a method for experimentally
probing the Fibonacci state. We introduce a generaliza-
tion of the interferometer introduced earlier for Majorana
states[27, 28], and argue that it provides a method for
unambiguously detecting Fibonacci order.
hibit a Fibonacci phase is foreshadowed by Rahmani, et
al.
[29](RZFA), who showed that a 1D Majorana chain
with strong interactions can be tuned to the tricritical
Ising (TCI) critical point. The same critical point arises
in the 1D "golden chain" model of coupled Fibonacci
anyons[30], as well as at interfaces connecting Ising and
Fibonacci order in the QH effect[31]. There is a sense
in which the TCI point of the RZFA model is like a Fi-
bonacci chain, but it is not clear how to extend it to 2D.
Our theory provides a method for accomplishing that.
Mong et al. [25] formulated the Fibonacci phase using
a "trench" construction that began with 1D strips of ν =
2/3 QH states coupled along trenches in the presence of
a SC. A single trench mapped to the 3 state clock model,
with a critical point described by the Z3 parafermion con-
formal field theory (CFT). The resulting 1D states were
coupled to create a gapped 2D phase. This is similar
to the coupled wire construction[32] for the Read Rezayi
state introduced in Ref. 33, but differs in an important
way. That model was based on the coset construction[34–
36], which allows a simple CFT ([SU (2)1]3 with cen-
tral charge c = 3) to be factored into less trivial CFTs
(SU (2)3 + SU (2)3
1/SU (2)3 with c = 9/5 + 6/5). This ex-
act factorization identifies a solvable coupled wire Hamil-
tonian, where counter-propagating modes of the two fac-
tors pair up differently, resulting in a non-trivial unpaired
chiral edge mode[33, 37].
The construction in this paper is based on the coset
SO(7)1/(G2)1[38]. SO(7)1 describes 7 free chiral Majo-
rana modes with c = 7/2. G2 is a Lie group that sits
inside SO(7).
(G2)1, with c = 14/5, is the Fibonacci
CFT[25, 39]. The quotient is a CFT with
c = 7/2 − 14/5 = 7/10,
(1)
which can be identified with the TCI model. Thus, the
edge states of a non-interacting T-SC with Chern number
n = 7 factor into a (G2)1 Fibonacci (FIB) sector and a
SO(7)1/(G2)1 TCI sector. In the following we will design
an interaction that separates the factors and leads to 2D
topological phases with either c = 14/5 (Fibonacci) or
c = 7/10 (anti-Fibonacci) edge states.
The fact that interacting Majorana fermions can ex-
We begin with some facts about G2, which is well
known in mathematical physics[38, 40]. G2 is the sim-
plest exceptional Lie group. Its relation to SO(7) involves
(cid:80)7
the mathematics of the octonion division algebra[41].
An octonion is specified by 8 real numbers: q = q0 +
a=1 qaea, where ea are 7 square roots of −1 that sat-
isfy the non-associative multiplication rule
eaeb = −δab + Cabcec.
(2)
Cabc is a totally antisymmetric tensor. It is not unique,
but can be chosen to satisfy[41]
Ca+1b+1c+1 = Cabc, C124 = 1,
(3)
where the indices are defined mod 7. Eq. 3 along with
antisymmetry specifies all the non-zero elements of Cabc.
ea define a set of 7 unit vectors that transform under
SO(7). However, not all SO(7) rotations preserve (2).
G2 is the automorphism group of the octonions: the sub-
group of SO(7) that preserves Cabc.
The 21 generators of SO(7) can be represented by
7 × 7 skew symmetric matrices T m,n of the form T m,n
ab =
i(δmaδnb − δmbδna). There are 14 combinations that pre-
serve Cabc, which can be written[40]
T A,A+2−T A+1,A+5
M A =
T A,A+2+T A+1,A+5−2T A+3,A+4
√
√
2
6
1 ≤ A ≤ 7
8 ≤ A ≤ 14.
(4)
(cid:88)
These matrices are normalized by Tr[M AM B] = 2δAB
and represent the generators of G2 in the 7D fundamental
representation, analogous to the Pauli matrices of SU (2).
In what follows, it will be useful to express the quadratic
Casimir operator as
2
3
(5)
where ∗Cabcd = abcdef gCef g/6 is the dual of Cabc whose
non-zero elements follow from ∗C3567 = −1, as in (3).
(δadδbc − δacδbd) − 1
3
∗ Cabcd
abM A
cd =
M A
A
We now consider the coset factorization of a 1D system
of 7 free chiral Majorana fermions described by
(cid:40)
7(cid:88)
a=1
H0 = − iv
2
γa∂xγa.
(6)
We adopt a Hamiltonian formalism[42] with Majorana
operators satisfying {γa(x), γb(x(cid:48))} = δ(x − x(cid:48))δab. H0
describes a SO(7)1 Wess Zumino Witten (WZW) model
with c = 7/2. The coset construction allows this to be
written H0 = HFIB + HTCI. The FIB sector is expressed
in terms of (G2)1 currents in Sugawara form [36][43],
HFIB =
πvJ AJ A
k + g
,
J A =
1
2
M A
abγaγb,
(7)
with k = 1, g = 4. Using (5), the operator product gives
HFIB = − 2iv
5
HTCI = − iv
10
∗Cabcdγaγbγcγd. (8)
γa∂xγa − πv
60
∗Cabcdγaγbγcγd,
γa∂xγa +
πv
60
a
A
(cid:88)
(cid:88)
(cid:88)
a
ab
(cid:88)
(cid:88)
(cid:88)
abcd
abcd
2
non-chiral system with interaction λ(cid:80)
FIG. 1. (a) 7 chiral Majorana edge modes factor into FIB
(b) A 1D
and TCI sectors with c = 14/5 + 7/10 = 7/2.
L transmits the
TCI sector, but reflects the FIB sector. The bottom panels
show network constructions for the Fibonacci phase (c) and
the anti-Fibonacci phase (d).
A J A
R J A
is (cid:104)Hα(x)Hβ(x(cid:48))(cid:105) =
The correlator of Hα=FIB,TCI
v2δαβcα/8π2(x− x(cid:48))4, with cFIB = 14/5 and cTCI = 7/10
[44]. This shows that H0 decouples into two independent
sectors, as depicted in Fig. 1a.
HFIB describes a (G2)1 WZW model, with two primary
fields 1, τ of dimension h = 0, 2/5. τ transforms under
the 7D representation of G2 and obeys the Fibonacci fu-
sion algebra τ × τ = 1 + τ . HTCI describes the M (5, 4)
minimal CFT with 6 primary fields 1, , (cid:48), (cid:48)(cid:48), σ, σ(cid:48),
with h = 0, 1/10, 3/5, 3/2, 3/80, 7/16[36]. The Majo-
rana fermion operator γa factors into the product
γa = τa ×
(9)
with h = 2/5 + 1/10 = 1/2. The 21 bilinears iγaγb
decompose into 14 J A's, along with 7 operators τa × (cid:48)
with h = 2/5 + 3/5 = 1. J A act only in the FIB sector:
[J A, HTCI] = 0. The trilinear combination Cabcγaγbγc is
(cid:48)(cid:48) with h = 3/2 and acts only in the TCI sector.
We now introduce a 1D model of 7 non-chiral Majo-
rana fermions γaR/Lwith an interaction that gaps the FIB
sector, leaving the TCI sector gapless. Consider
H = − iv
2
(γaR∂xγaR−γaL∂xγaL)+λ
(cid:88)
(cid:88)
L , (10)
J A
R J A
a
A
where J A
R/L are given in (7). The λ term commutes with
HTCI, so it operates only in the FIB sector. A per-
turbative renormalization group analysis gives dλ/d(cid:96) =
−2λ2/πv, so λ < 0 is marginally relevant. When λ flows
to strong coupling it is natural to expect that it leads to
a gap ∆ ∝ e−πv/2λ in the FIB sector and a gapless TCI
critical point. This is similar to the RZFA model, except
the G2 symmetry locates the critical point exactly.
The exact factorization allows the two sectors to be
separated. Consider the 1D system in Fig. 1b, with
FIBA-FIBc=7/2c=14/5 (FIB)c=7/10 (TCI)=(a)(b)(c)(d)0Lγετ λ(x) (cid:54)= 0 for 0 < x < L. Provided L (cid:29) ξ = v/∆, the gap
in the FIB sector leads to an exponential suppression of
transmission. The FIB sector will be perfectly reflected,
while the TCI sector will be perfectly transmitted. In-
terestingly, this means an incident Majorana fermion γa
splits, with τa reflected and transmitted. This forms
the basis for the interferometer to be discussed below.
We wish to use (10) to construct a 2D gapped topo-
logical phase. One approach is to adapt the coupled wire
model[32]. This requires coupling right movers of the
TCI sector on wire i to left movers of the TCI sector on
wire i + 1. If this gaps the TCI sector, then we will have
a 2D gapped phase with TCI edge states. This is prob-
lematic, however, because the simplest tunneling term
that can be built from local operators and does not cou-
ple to the gapped FIB sector is the trilinear Cabcγaγbγc.
The resulting tunneling term u(cid:48)(cid:48)
i+1L, with dimension
3, is perturbatively irrelevant. This does not preclude
the possibility of a gapped phase for large u, but a non-
perturbative analysis would be necessary to establish it.
Fortunately, however, the exact factorization of the coset
model allows for an alternative network construction, in-
spired by the Chalker Coddington model[45].
iR(cid:48)(cid:48)
Fig. 1c shows a network of n = 7 T-SC islands in
which each island has 7 chiral Majorana modes. In the
absence of coupling the Majorana modes are localized
on each island, so the system is a trivial SC. If the is-
lands are strongly coupled by single particle tunneling
they will merge, and the system is a n = 7 T-SC. In
the absence of interactions, the transition between these
phases will have 7 gapless 2 + 1D Majorana modes. For
strong interactions intermediate topological phases can
arise. We turn off the single particle tunneling and cou-
ple the neighboring islands with the interaction term in
(10). Provided the contact length L (cid:29) ξ, the excita-
tions in the FIB sector will be reflected from the contact,
which means they are transmitted to the next island. Ex-
citations in the TCI sector, however, are transmitted by
the contact, so they remain localized on the same island.
From Fig. 1c, it can be seen that both the TCI and the
FIB sectors are localized in the interior of the network.
The TCI states are localized on the islands, while the
FIB states are localized on the dual lattice of voids be-
tween the islands. Since all bulk states are localized in
finite, lattice scale regions, there will be a bulk excita-
tion gap. The perimeter of the network, however has a
gapless FIB edge state with c = 14/5. We emphasize
that though fine tuning is required to achieve the exactly
solvable Hamiltonian (10), the tuning does not need to
be perfect. This gapped Fibonacci phase will be robust
to finite single particle tunneling and other interactions.
Fig. 1d shows a similar network that is surrounded
by a n = 7 chiral Majorana edge state. This leads to
a distinct phase that also has a bulk gap, but has TCI
edge states with c = 7/10. This state can be viewed as
a Fibonacci phase sitting inside a n = 7 T-SC, with c =
1
τ
1
1
(cid:48)
ψ
(cid:48)(cid:48)
3
σi
σ(cid:48)
σ
TABLE I. The 6 quasiparticles of the TCI model can be iden-
tified with combinations of Ising and Fibonacci quasiparticles.
7/2 − 14/5. We call this the "anti-Fibonacci" in analogy
with the "anti-pfaffian" [46, 47], which is the pfaffian
sitting inside a ν = 1 QH state. The anti-Fibonacci has a
topological order associated with the TCI CFT. However,
the 6 TCI quasiparticles can also be understood as a
combination of 1, τ Fibonacci quasiparticles with the 1,
ψ, σi Ising quasiparticles. The TCI fusion rules[36] of the
quasiparticles identified in Table I are reproduced by the
simpler Fibonacci and Ising fusion rules (e.g. σi × σi =
1 + ψ). Similar fusion rule decompositions have been
identified for other theories[31, 39]. As in the T-SC σ
and σ(cid:48) are not dynamical quasiparticles, but they will be
associated with h/2e vortices in the SC. Depending on
the energetics, a SC vortex in the anti-Fibonacci phase
will bind either a σ or σ(cid:48). If it is σ, then the vortex binds
a Fibonacci anyon. Likewise in the Fibonacci phase, a
vortex could bind 1 or τ [25].
The above considerations suggest a possible route to-
wards realizing the Fibonacci phase is to start with a sys-
tem close to a multi-component T-SC - trivial SC tran-
sition. This could be achieved by introducing SC via the
proximity effect into a 2D electron gas in the vicinity of
a quantum Hall plateau transition with degenerate Lan-
dau levels. Progress in this direction has recently been re-
ported in a quantum anomalous Hall insulator coupled to
a SC, where a plateau observed in the two terminal con-
ductance was attributed to T-SC[17]. Another promising
venue is graphene, which has a four-fold degenerate ze-
roth Landau level. Coexistence of SC with the quantum
Hall effect in these systems appears feasible[48, 49].
If the Fibonacci and/or the anti-Fibonacci T-SC can
be realized, then it will be important to develop ex-
perimental protocols for probing them. One approach
is to measure the thermal Hall conductance, which di-
rectly probes the central charge c of the edge states:
κxy = cπ2T k2
B/3h. This has proven to be a power-
ful method for identifying the topological order of QH
states[7, 50, 51], but it does not directly probe the non-
Abelian quasiparticle statistics. In the QH effect, Fabry
Perot[52–54] and Mach Zehnder[55, 56] interferometers
have been proposed for this purpose. Here we introduce
a distinct interferometer that generalizes the Majorana
fermion interferometer[27, 28].
Fig. 2 shows a Hall bar with 4 Ohmic contacts (C1-4)
where the electron density is adjusted so that adjacent
regions have QH filling factors ν = 1 and ν = 4. The
middle is coupled to a SC that leads to a n = 1 T-SC
4
cled by anyon b is given by the monodromy matrix[54]
Mab = SabS11/Sa1Sb1, which depends the topological
data in the modular S-matrix Sab. We therefore predict
I2 =
e2
h
t11MabV1,
(11)
where a and b are labels for the transmitted and localized
quasiparticles. Provided quasiparticles can be introduced
to the island without modifying t11, (which depends on
the local Hamiltonian near the edges) the ratios of the
conductances for different localized quasiparticles will be
universal (note Ma1 = 1). Other proposed interferomet-
ric measurements of Fibonacci statistics have challenges
similar to controlling t11[39, 54]. A possible (albeit more
complicated) way to overcome that is to include a con-
tact inside the island that allows quasiparticles to come
and go, leading to telegraph noise[58].
For the FIB phase, where the transmitted quasiparticle
is τ the universal ratio is determined by
M FIB
√
τ τ = −1/ϕ2,
5)/2 is the golden mean.
(12)
b
ψbi
ψσi
In the
where ϕ = (1 +
A-FIB phase, the ratios are determined by M TCI
for
b = 1, , (cid:48), (cid:48)(cid:48), σ, σ(cid:48). These can be evaluated from the
6 × 6 TCI S-matrix[29]. However, the same results are
obtained by treating the A-FIB as the FIB sitting inside
Ising. Then, M TCI
, where bi(f ) are the
Ising (Fibonacci) decomposition of particle b from Table
= −1 (which is
I. The non-trivial Ising term is M I
probed in the Majorana interferometer). In the A-FIB
state, if a vortex binds σ, the extra quasiparticle can be
controlled with a magnetic flux, and M TCI
b = M I
M FIB
τ bf
σ = +1/ϕ2.
In this paper we have introduced a theory of the Fi-
bonacci phase based on Majorana fermions near a multi-
component topological critical point with strong interac-
tions. While this phase has the same topological struc-
ture as the parafermion based Fibonacci states, our the-
ory clarifies the relation between the Fibonacci and ant-
Fibonacci phases and shows the way in which Majorana
fermions can fractionalize into Fibonacci anyons. It also
points to a promising direction in the broader problem
of searching for exotic topological phases in strongly in-
teracting systems with massless single-particle Dirac or
Majorana fermions.
It is a pleasure to thank Jonathan Heckman, Abhay
Pasupathy, Ady Stern and Jeffrey Teo for helpful discus-
sions. This work was supported by a Simons Investigator
grant from the Simons Foundation.
[1] A. Kitaev, Annals of Physics 321, 2 (2006).
[2] C. Nayak, S. H. Simon, A. Stern, M. Freedman, and
S. Das Sarma, Rev. Mod. Phys. 80, 1083 (2008).
[3] G. Moore and N. Read, Nuclear Physics B 360, 362
(1991).
FIG. 2. A Fibonacci interferometer in a Hall bar with Ohmic
contacts C1-4 and SC in the shaded region. Dirac (Majorana)
edge states are indicated by solid (dashed) lines. The c = 7/2
edge splits into FIB and TCI edges around the Fibonacci (a)
or anti-Fibonacci (b) island. A quasiparticle adds a branch
cut (dotted line) that modifies transmission from C1 to C2.
†
inψin−ψ
region and a trivial n = 8 SC region. We assume that at
the boundary between the n = 1 and n = 8 SCs there is
an island of either Fibonacci (Fig. 2a) or anti-Fibonacci
(Fig. 2b). This leads to the pattern of edge states shown.
Suppose contact C1 is at voltage V1, and that the
SC and the other 3 contacts are grounded. We use a
Landauer-Buttiker formalism[57] to compute the current
†
in C2, given by I2 = vF(cid:104)ψ
outψout(cid:105), where ψin(out)
describe the ν = 1 chiral fermions entering (leaving) C2.
V1 only affects ψin, which in the SC decomposes into
1(cid:105). γ0 comes directly
γ0 + iγ(cid:48)
from C1, but γ(cid:48)
1 comes from the region where τ and split
and then recombine. First suppose there are no quasi-
particles on the island. γ(cid:48)
1 will be a linear combination
j=1 t1jγj of the incident Majorana modes, where tij is
a real orthogonal scattering matrix and γ2−7 are associ-
ated with the c = 3 edge. Ignoring the contributions from
the grounded contact C3, iγ0γ(cid:48)
1 = t11iγ0γ1. This relates
I2 to the current coming out of C1, I2 = t11(e2/h)V1.
1[27, 28]. Thus I2 ∝ (cid:104)iγ0γ(cid:48)
(cid:80)7
Quasiparticles localized on the island will modify this
result. The transmitted particles will encounter a branch
cut due to non-Abelian statistics that can modify the
state of the localized quasiparticle. Provided the local
Hamiltonian near the edge is not modified by the pres-
ence of the extra quasiparticle, this will be purely of
topological origin. The expectation value of the cur-
rent will only be non-zero if the localized quasiparti-
cle returns to its original state. The probability ampli-
tude that anyon a returns to its original state when cir-
ν = 1ν = 1ν = 4ν = 4c=1c=3c=1/2c=1/2c=1/2c=14/5c=7/10n=8 SCFIBc=1c=3n=1 T-SCc=4c=4τC2C4C3C1c=7/2τεγ1γ0ν = 1ν = 1ν = 4ν = 4c=1c=3c=1/2c=1/2c=1/2c=14/5c=7/10c=1c=3c=4c=4C2C4C3C1c=7/2τεγ1γ0A-FIBσγ'1γ'1n=8 SCn=1 T-SC(b)(a) [4] I. P. Radu, J. B. Miller, C. M. Marcus, M. A. Kastner,
L. N. Pfeiffer, and K. W. West, Science 320, 899 (2008).
and
[5] M. Dolev, M. Heiblum, V. Umansky, A. Stern,
076803 (2009).
[32] C. L. Kane, R. Mukhopadhyay, and T. C. Lubensky,
Phys. Rev. Lett. 88, 036401 (2002).
D. Mahalu, Nature 452, 829 (2008).
[33] J. C. Y. Teo and C. L. Kane, Phys. Rev. B 89, 085101
5
[6] R. L. Willett, L. N. Pfeiffer,
and K. W. West, Pro-
ceedings of the National Academy of Sciences 106, 8853
(2009).
[7] M. Banerjee, M. Heiblum, V. Umansky, D. Feldman,
Y. Oreg, and A. Stern, arXiv:1710.00492.
[8] N. Read and D. Green, Phys. Rev. B 61, 10267 (2000).
[9] A. Y. Kitaev, Physics-Uspekhi 44, 131 (2001).
[10] L. Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407
(2008).
[11] L. Fu and C. L. Kane, Phys. Rev. B 79, 161408 (2009).
[12] R. M. Lutchyn, J. D. Sau, and S. Das Sarma, Phys. Rev.
Lett. 105, 077001 (2010).
[13] Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett.
105, 177002 (2010).
[14] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Phys. Rev. B
82, 184516 (2010).
[15] V. Mourik, K. Zuo, S. M. Frolov, S. R. Plissard, E. P.
A. M. Bakkers, and L. P. Kouwenhoven, Science 336,
1003 (2012).
[16] S. Nadj-Perge, I. K. Drozdov, J. Li, H. Chen, S. Jeon,
J. Seo, A. H. MacDonald, B. A. Bernevig, and A. Yaz-
dani, Science 346, 602 (2014).
[17] Q. L. He, L. Pan, A. L. Stern, E. C. Burks, X. Che,
G. Yin, J. Wang, B. Lian, Q. Zhou, E. S. Choi, K. Mu-
rata, X. Kou, Z. Chen, T. Nie, Q. Shao, Y. Fan, S.-C.
Zhang, K. Liu, J. Xia, and K. L. Wang, Science 357,
294 (2017).
[18] M. H. Freedman, M. Larsen, and Z. Wang, Communi-
cations in Mathematical Physics 227, 605 (2002).
[19] N. Read and E. Rezayi, Phys. Rev. B 59, 8084 (1999).
[20] M. Barkeshli and X.-L. Qi, Phys. Rev. X 2, 031013
(2012).
[21] N. H. Lindner, E. Berg, G. Refael, and A. Stern, Phys.
Rev. X 2, 041002 (2012).
[22] M. Cheng, Phys. Rev. B 86, 195126 (2012).
[23] D. J Clarke, J. Alicea, and K. Shtengel, Nature commu-
nications 4, 1348 (2013).
[24] A. Vaezi, Phys. Rev. B 87, 035132 (2013).
[25] R. S. K. Mong, D. J. Clarke, J. Alicea, N. H. Lindner,
P. Fendley, C. Nayak, Y. Oreg, A. Stern, E. Berg, K. Sht-
engel,
and M. P. A. Fisher, Phys. Rev. X 4, 011036
(2014).
[26] A. Vaezi, Phys. Rev. X 4, 031009 (2014).
[27] A. R. Akhmerov, J. Nilsson, and C. W. J. Beenakker,
Phys. Rev. Lett. 102, 216404 (2009).
[28] L. Fu and C. L. Kane, Phys. Rev. Lett. 102, 216403
(2009).
[29] A. Rahmani, X. Zhu, M. Franz, and I. Affleck, Phys.
Rev. Lett. 115, 166401 (2015).
[30] A. Feiguin, S. Trebst, A. W. W. Ludwig, M. Troyer,
A. Kitaev, Z. Wang, and M. H. Freedman, Phys. Rev.
Lett. 98, 160409 (2007).
[31] E. Grosfeld and K. Schoutens, Phys. Rev. Lett. 103,
(2014).
[34] P. Goddard, A. Kent, and D. Olive, Physics Letters B
152, 88 (1985).
[35] E. Fradkin, C. Nayak,
and K. Schoutens, Nuclear
Physics B 546, 711 (1999).
[36] P. Di Francesco, P. Mathieu, and D. S´en´echal, Confor-
mal field theory, Graduate texts in contemporary physics
(Springer, New York, NY, 1997).
[37] S. Sahoo, Z. Zhang, and J. C. Y. Teo, Phys. Rev. B 94,
165142 (2016).
[38] S. Shatashvili and C. Vafa, Selecta Mathematica 1, 347
(1995).
[39] P. Bonderson, Non-Abelian Anyons and Interferometry,
Ph.D. thesis, California Institute of Technology (2007).
[40] M. Gnaydin and S. V. Ketov, Nuclear Physics B 467,
215 (1996).
[41] J. C. Baez, Bull. Amer. Math. Soc. 39, 145 (2002).
[42] The Hamiltonian density is equivalent to the CFT energy
momentum tensor on a cylinder: H0 = vTcyl/2π.
[43] In addition to [42], J A differs in normalization from the
[44] Note that (cid:104)γa(x)γb(0)(cid:105) = δab/2πix and(cid:80)∗C 2
WZW current defined in Ref. [36], which is 2πJ A.
abcd = 168.
[45] J. T. Chalker and P. D. Coddington, Journal of Physics
C: Solid State Physics 21, 2665 (1988).
[46] M. Levin, B. I. Halperin, and B. Rosenow, Phys. Rev.
Lett. 99, 236806 (2007).
[47] S.-S. Lee, S. Ryu, C. Nayak, and M. P. A. Fisher, Phys.
Rev. Lett. 99, 236807 (2007).
[48] F. Amet, C. T. Ke, I. V. Borzenets, J. Wang, K. Watan-
abe, T. Taniguchi, R. S. Deacon, M. Yamamoto,
Y. Bomze, S. Tarucha, and G. Finkelstein, Science 352,
966 (2016).
[49] G.-H. Lee, K.-F. Huang, D. K. Efetov, D. S. Wei, S. Hart,
T. Taniguchi, K. Watanabe, A. Yacoby, and P. Kim,
Nature Physics 13, 693698 (2017).
[50] C. L. Kane and M. P. A. Fisher, Phys. Rev. B 55, 15832
(1997).
[51] M. Banerjee, M. Heiblum, A. Rosenblatt, Y. Oreg,
D. E. Feldman, A. Stern, and V. Umansky, Nature 545,
75 (2016).
[52] A. Stern and B. I. Halperin, Phys. Rev. Lett. 96, 016802
(2006).
[53] P. Bonderson, A. Kitaev, and K. Shtengel, Phys. Rev.
Lett. 96, 016803 (2006).
[54] P. Bonderson, K. Shtengel, and J. K. Slingerland, Phys.
Rev. Lett. 97, 016401 (2006).
[55] D. E. Feldman and A. Kitaev, Phys. Rev. Lett. 97,
186803 (2006).
[56] K. T. Law, Phys. Rev. B 77, 205310 (2008).
[57] M. Buttiker, Phys. Rev. B 38, 9375 (1988).
[58] C. L. Kane, Phys. Rev. Lett. 90, 226802 (2003).
|
1605.06584 | 1 | 1605 | 2016-05-21T04:33:50 | Amplitude dependence of image quality in atomically-resolved bimodal atomic microscopy | [
"cond-mat.mes-hall"
] | In bimodal FM-AFM, two flexural modes are excited simultaneously. The total vertical oscillation deflection range of the tip is the sum of the peak-to-peak amplitudes of both flexural modes (sum amplitude). We show atomically resolved images of KBr(100) in ambient conditions in bimodal AFM that display a strong correlation between image quality and sum amplitude. When the sum amplitude becomes larger than about 200 pm, the signal-to-noise ratio (SNR) is drastically decreased. We propose this is caused by the temporary presence of one or more water layers in the tip-sample gap. These water layers screen the short range interaction and must be displaced with each oscillation cycle. Further decreasing the sum amplitude, however, causes a decrease in SNR. Therefore, the highest SNR in ambient conditions is achieved when the sum amplitude is slightly less than the thickness of the primary hydration layer. | cond-mat.mes-hall | cond-mat | Amplitude dependence of image quality in atomically-resolved bimodal atomic microscopy
Hiroaki Ooe,1,2 a) Dominik Kirpal,1 Daniel S. Wastl,1 Alfred J. Weymouth,1 Toyoko Arai,2 and Franz J.
Giessibl1.
1Institute of Experimental and Applied Physics, University of Regensburg D-93053 Regensburg, Germany
2Natural Science and Technology, Kanazawa University, Kanazawa, 920-1192 Ishikawa, Japan
a electronic mail: hiroakiooe@se.kanazawa-u.ac.jp
In bimodal FM-AFM, two flexural modes are excited simultaneously. The total vertical oscillation
deflection range of the tip is the sum of the peak-to-peak amplitudes of both flexural modes (sum
amplitude). We show atomically resolved images of KBr(100) in ambient conditions in bimodal AFM that
display a strong correlation between image quality and sum amplitude. When the sum amplitude becomes
larger than about 200 pm, the signal-to-noise ratio (SNR) is drastically decreased. We propose this is
caused by the temporary presence of one or more water layers in the tip-sample gap. These water layers
screen the short range interaction and must be displaced with each oscillation cycle. Further decreasing
the sum amplitude, however, causes a decrease in SNR. Therefore, the highest SNR in ambient conditions
is achieved when the sum amplitude is slightly less than the thickness of the primary hydration layer.
1
Frequency modulation atomic force microscopy (FM-AFM)1 is a powerful tool for investigating
atomic-scale phenomena. The interaction between a tip at the end of an oscillating cantilever and a sample
is measured via the frequency shift of the oscillation. If the oscillation amplitude is much larger than the
decay length of the short range interaction, the tip spends little time within the short range interaction
region, leading to a small contribution of the short range interaction to the detectable signal. It has been
shown that in vacuum FM-AFM, the maximum signal-to-noise ratio (SNR) is achieved with an oscillation
amplitude slightly larger than this decay length.2 When investigating short range forces that decay at
lengths comparable to interatomic distances, the highest SNR is achieved with amplitudes in the range
from several tens to a few hundred picometers (small amplitudes).
Soft cantilevers that have a spring constant of k < 100 N/m (which is typical for commercial silicon
cantilevers) require large amplitudes to prevent the tip from crashing into the surface at close distance (so-
called "jump-to-contact").3 For this reason, atomic resolution measurements with soft cantilevers require
the use of large amplitudes from one nanometer to tens of nanometers.4-6 One way to achieve controllable
small amplitudes with soft cantilevers is to use a higher flexural mode which provides a much higher
effective stiffness than the fundamental mode.7 Theoretically, the effective stiffness of the second flexural
mode is about 40 times higher than in the first flexural mode and the resonance frequency is about 6.2
times higher.8 This can be implemented with bimodal AFM,9,10 in which the first flexural mode is excited
at a large amplitude and the second flexural mode at a small amplitude to detect short range interactions.
Bimodal AFM has been very successful in ambient and vacuum environments.10-12 In ambient
environments or liquids, the cantilever must oscillate through the liquid or through water condensation
layers.12-15 It was shown that the small oscillation of the second flexural mode could be used to increase
sensitivity to materials properties.16,17 Several groups have applied this technique to biological samples,
including antibodies12 and proteines.10 Schwenk and coworkers used bimodal AFM to increase MFM
contrast of magnetic samples.20,21 Kawai and coworkers explicitly demonstrated the advantage of a higher
flexural mode oscillating at smaller amplitudes (amplitudes less than 100 pm) with a standard Si cantilever
on a KBr(100) surface in UHV.22 Moreno and coworkers used this to achieve intramolecular resolution in
UHV conditions at low temperature.11 More recently, Santos and coworkers have started to consider the
advantages of small oscillations in both flexural modes.17
It is expected for atomic resolution that the ideal bimodal measurement should be acquired with small
amplitudes in both the first and second flexural modes.17 This requires the use of a much stiffer sensor.
In this Letter, we present data acquired with a qPlus sensor with a spring constant of k = 1800 N/m.24
This high stiffness allows oscillation amplitudes of the first flexural mode smaller than one angstrom.14-15
We performed measurements in ambient condition on KBr(100). The amplitude of the first flexural mode,
A1 and of the second flexural mode, A2, were independently set. These amplitudes were calibrated with a
thermal spectrum and the ratio of the deflection sensitivity of two flexural modes.8,24-26 The frequency
shifts of the first flexural mode, ∆f1, and of the second flexural mode, ∆f2, were recorded in quasi-constant
2
height mode using low gain integral feedback to compensate for thermal drift. We used a sensor with a
resonance frequency of the first flexural mode of f1 = 32596.7 Hz and quality factor Q1 = 2906. The second
flexural mode had a resonance frequency of f2 = 194858.2 Hz and a quality factor of Q2 = 1848.
In ambient conditions, water condenses on all surfaces. Near the surface, it forms ordered hydration
layers with a thickness of ~ 200 - 310 pm.13-15,29-33 In previous work, the ideal amplitude of oscillation was
determined for single-mode FM-AFM measurements in ambient conditions.13-15 On the KBr(100) surface,
the highest SNR was observed with an amplitude of A ~ 75pm.14 With smaller amplitudes, the signal
becomes noisier due to instrumental noise.1,26,27 With larger amplitudes, the SNR suffers for two reasons:
The average tip-sample distance becomes larger, reducing the signal, and water molecules come between
the tip and sample. The tip then needs to penetrate the hydration layer during each oscillation cycle and
the water molecules screen the short range interaction.14 Because of these effects, the SNR is enhanced
when the peak-to-peak amplitude is slightly smaller than the thickness of a single hydration layer.15
Figure 1 shows single-mode FM-AFM and bimodal FM-AFM measurements. The oscillation models
of the first and second flexural modes are shown in Figure 1 (a) and (b). First we collected single-mode
images, exciting either the first or the second flexural mode. Figure 1(c) is a ∆f1 image taken with only the
first flexural mode excited at A1 = 75 pm and Figure 1(d) is a ∆f2 image taken with only the second flexural
mode excited at A2 = 75 pm. Atomic resolution can clearly be seen in both images.
We then investigated if the two modes influence each other. To do this, we first acquired ∆f1 data with
only the first flexural mode excited, then also excited the second mode. Figures 1 (e) and (f) show
simultaneously acquired ∆f1 and ∆f2. The slow scan direction of these imaging was downward. Down to
line A, only the first flexural mode was excited at A1 = 75 pm, and atomic resolution can clearly be seen
in ∆f1. From line A down, the second flexural mode is also excited at A2 = 75 pm and the ∆f2 controller
was turned on from line B. With both modes excited, the ∆f1 image becomes much weaker.
Next we acquired data with both first and second flexural modes excited at the same amplitude. Figure
2 shows images of ∆f1 and ∆f2 with both flexural modes excited at amplitudes of 75 pm, 53 pm and 40 pm.
When A1 = A2 = 75 pm, the (a) ∆f1 image and (b) ∆f2 image show faint atomic contrast similar to that in
Figure 1 (e). The images improve when the amplitudes are decreased, as can be seen in Figure 2 (c) and
(d), for which A1 = A2 = 53 pm. Very clear images are obtained when A1 = A2 = 40 pm, shown in Figure 2
(e) and (f).
Similar to previous findings in vacuum,2 we find an optimal SNR for amplitudes in the sub-Angstrom
level. However, empirically we find a notable difference to the decrease of SNR when increasing the
amplitude beyond its optimal value Aopt. In vacuum, SNR decreases quite shallow at a rate of
approximately2 (Aopt/A)0.5. In ambient environments with a liquid adsorption layer, we find a much stronger
decay of image quality with sum amplitude. The sum amplitude is the vertical range that is covered by the
oscillating cantilever: zp-p= 2 (A1 + A2). We propose that using sum amplitudes greater than half the
thickness of the first hydration layer (approx. 200 pm) allows water molecules to penetrate the gap between
3
the tip apex and the sample, reducing the image quality.
We then varied A1 and A2, keeping zp-p less than the thickness of a single hydration layer. In Figure 3(a)
and (b), atomic contrast can be seen in both ∆f1 and ∆f2. A1 = 60 pm > A2 = 15 pm. Correspondingly, ∆f1
shows higher SNR. In Figure 3(c) and (d), A1 = A2 and the SNR of the two images are similar. Finally, in
Figure (e) and (f), A1 = 15 pm < A2 = 60 pm, and the corresponding ∆f2 image has a higher SNR. These
results show that SNR is higher with larger amplitudes. Instrumental noise decreases with increasing
amplitude. Therefore, for each mode, larger amplitudes correspond to lower noise, as expected when
considering the noise contributions in FM-AFM.1,27,28
In vacuum, the optimal amplitude is given by the balance of a more precise frequency measurement for
larger amplitudes at the cost of a smaller frequency shift signal for larger amplitudes, resulting in an
optimal amplitude that is approximately given by the decay length of the short-range interaction.2 In
ambient conditions, the noise in frequency measurement also decreases for larger amplitudes, but the
frequency shift signal induced by short-range interactions drops rapidly once the sum amplitude is large
enough to admit water molecules in the tip-sample gap. The result is that the ideal amplitudes for bimodal
FM-AFM follow the same pattern as for single-mode FM-AFM measurements. In ambient conditions, the
sum amplitude must be smaller than the thickness of a hydration layer to ensure that the tip does not leave
and re-penetrate a hydration layer with each cycle. At the same time, the amplitude has to be as large as
possible to reduce the noise. The resolution of each mode can be increased by increasing its amplitude up
to the ideal sum amplitude.
In this study, we investigated the effect of the amplitude of the first and second flexural modes on the
image quality in bimodal FM-AFM with small amplitudes in ambient conditions. Two orthogonal flexural
modes can have a strong influence on each other. This is due to the hydration layer of sample surface. We
showed that for this system, maximizing the SNR for both ∆f1 and ∆f2 results in the requirement that A1 =
A2. Our results supporting that conventional bimodal AFM might also benefit from stiffer cantilevers that
enable a smaller fundamental amplitude.
Acknowledgements
Funding was provided by Deutsche Forschungsgemeinschaft under GRK 1570 and by "Strategic Young
Researcher Overseas Visits Program for Accelerating Brain Circulation" from the Japan Society for the
Promotion of Science. The authors gratefully acknowledge the support for this study provided by
Kanazawa University SAKIGAKE Project.
References
[1] T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar, J. Appl. Phys. 69, 668 (1991).
[2] F. J. Giessibl, H. Bielefeldt, S. Hembacher, and J. Mannhart, Appl. Surf. Sci. 140, 352 (1999).
[3] F. J. Giessibl, Phys. Rev. B 56, 16010 (1997),
4
[4] F. J. Giessibl, Science 267, 68 (1995).
[5] S. Kitamura, and M. Iwatsuki, Jpn. J. Appl. Phys. 34, L145 (1995).
[6] K. Fukui, H. Onishi, and Y. Iwasawa, Phys. Rev. Lett. 79, 4202 (1997).
[7] S. Kawai, S. Kitamura, D. Kobayashi, S. Meguro, and H. Kawakatsu, Appl. Phys. Lett., 86, 193107
(2005).
[8] S. Rast, C. Wattinger, U. Gysin, and E. Meyer, Rev. Sci. Instrum. 71, 2772 (2000).
[9] T. R. Rodriguez, and R. Garcia, Appl. Phys. Lett. 84, 449 (2004).
[10] R. Garcia, E. T. Herruzo, Nature Nanotechnology 7, 217 (2012).
[11] C. Moreno, O. Stetsovych, T. K. Shimizu, and O. Custance, Nano Lett. 15, 2257 (2015).
[12] N. F. Martinez, J. R. Lozano, E. T. Herruzo, F. Garcia, C. Richter, T. Sulzbach, and R. Garcia,
Nanotechnology, 19, 384011 (2008).
[13] D. S. Wastl, M. Judmann, A. J. Weymouth, and F. J. Giessibl, ACS Nano, 9, 3858 (2015).
[14] D. S. Wastl, A. J. Weymouth, and F. J. Giessibl, Phys. Rev. B 87, 245415 (2013).
[15] D. S. Wastl, A. J. Weymouth, and F. J. Giessibl ACS Nano, 8, 5233 (2014)
[16] N. F. Martinez, S. Patil, J. R. Lozano, R. Garcia, Appl. Phys. Lett. 89, 153115 (2006).
[17] S. Santos, Appl. Phys. Lett. 103, 231603 (2013).
[18] S. D. Solares, and G. Chawla, J. Appl. Phys. 108, 054901 (2010).
[19] G. Chawla, and S. D. Solares, Appl. Phys. Lett. 99, 074103 (2011).
[20] J. Schwenk, M. Marioni, S. Romer, N. R. Joshi, and H. J. Hug, Appl. Phys. Lett. 104 112412 (2014).
[21] J. Schwenk, X Zhao, M. Baconi, M. A. Manioni, S. Romer, and H. J. Hug, Appl. Phys. Lett. 107,
132407 (2015)
[22] S. Kawai, T. Glatzel, S. Koch, B. Such, A. Baratoff, and E. Meyer, Phys. Rev. Lett. 103, 220801
(2009).
[23] S. Santos, V. Barcons, H. K. Christenson, D. J. Billingsley, W. A. Bonass, J. Font, and N. H. Thomson,
Appl. Phys. Lett. 103, 063702 (2013).
[24] F. J. Giessibl, Appl. Phys. Lett. 76, 1470 (2000).
[25] J. Welker, F. F. Elsner, and F. J. Giessibl, Appl. Phys. Lett. 99, 084102 (2011).
[26] F. J. Giessibl, Rev. Mod. Phys. 75, 949 (2003).
[27] K. Kobayashi, H. Yamada, and K. Matsushige, Rev. Sci. Instrum. 82, 0337025 (2011).
[28] M. Luna, F. Rieutord, N. A. Melman, Q. Dai, and M. Salmeron, J. Phys. Chem. A 102, 6793 (1998).
[29] S. Jeffery, P. M. Hoffmann, J. B. Pethica, C. Ramanujan, H. Ozgur Ozer, and A. Oral, Phys. Rev. B
70, 054114 (2004).
[30] T. Fukuma, M. J. Higgins, and S. P. Jarvis, Biophys. J. 92, 3603 (2007).
[31] K. Kimura, S. Ido, N. Oyabu, K. Kobayashi, and Y. Hirata, J. Chem. Phys. 132, 194705 (2010).
[32] J. N. Israelachvili and R. M. Pashley, Nature (London) 306, 249 (1983).
[33] J. I. Kilpatrick, S. Loh, and S. P. Jarvis, J. Am. Chem. Soc. 135, 2628 (2013).
5
FIG. 1 Schematics of (a) first and (b) second flexural mode. (c) ∆f1 image with only the first flexural mode
excited at A1 = 75 pm. (d) ∆f2 with only the second flexural mode excited at A2 = 75 pm. (e) ∆f1 and (f)
∆f2 images simultaneously acquired. Up to line A, only the first mode was excited at A1 = 75 pm. Past line
B, both modes were excited at A1 = A2 = 75 pm. For clarity, all images were line-flattened. The raw data
with scale of frequency shift are shown in Figure 1 of supplementary material.
6
FIG. 2 Bimodal FM-AFM images taken in which A1 = A2. (a and b) A1 = A2 = 75 pm (c and d) A1 = A2 =
53 pm (e and f) A1 = A2 = 40 pm. Images are line-flattened for clarity. The raw data with scale of frequency
shift are shown in Figure 2 of supplementary material.
7
FIG.3 A survey of images taken with different A1 and A2 values in A1 + A2 ~ 80 pm. (a) ∆f1 image with A1
= 60 pm, and (b) ∆f2 image with A2 = 15 pm. (c) ∆f1 image with A1 = 40 pm, and (d) ∆f2 image with A2 =
40 pm. (e) ∆f1 image with A1 = 15 pm, and (f) ∆f2 image with A2 = 60 pm. All images were line flattened
for clarity. The raw data with scale of frequency shift are shown in Figure 3 of supplementary material.
8
For Supplementary Material.
Figure 1 Raw data
9
Figure 2 Raw data
10
Figure 3 Raw data
11
|
1108.1666 | 2 | 1108 | 2011-10-07T10:04:47 | An electrical probe for mechanical vibrations in suspended carbon nanotubes | [
"cond-mat.mes-hall",
"cond-mat.other"
] | The transport properties of a suspended carbon nanotube probed by means of a STM tip are investigated. A microscopic theory of the coupling between electrons and mechanical vibrations is developed. It predicts a position-dependent coupling constant, sizeable only in the region where the vibron is located. This fact has profound consequences on the transport properties, which allow to extract information on the location and size of the vibrating portions of the nanotube. | cond-mat.mes-hall | cond-mat | An electrical probe for mechanical vibrations in suspended carbon nanotubes
N. Traverso Ziani1, G. Piovano1,2, F. Cavaliere1,2 and M. Sassetti1,2
1 Dipartimento di Fisica, Universit`a di Genova,
Via Dodecaneso 33, 16146, Genova, Italy.
2 CNR-SPIN, Via Dodecaneso 33, 16146, Genova, Italy.
(Dated: March 8, 2021)
and
The transport properties of a suspended carbon nanotube probed by means of a STM tip are
investigated. A microscopic theory of the coupling between electrons and mechanical vibrations is
developed. It predicts a position-dependent coupling constant, sizeable only in the region where the
vibron is located. This fact has profound consequences on the transport properties, which allow to
extract information on the location and size of the vibrating portions of the nanotube.
PACS numbers: 85.85.+j, 73.63.Kv
I.
INTRODUCTION
Carbon nanotubes (CNTs)1 are extremely versatile
systems with metallic or semiconducting behavior de-
pending on their wrapping orientation.2,3 Deposing them
on an insulating substrate and tunnel-coupling it to bi-
ased electrodes it is possible to create a single-electron
transistor, in which the nanotube behaves as a quan-
tum dot.4 -- 6 Alternately one can embed a quantum dot
into the nanotube via geometrical defects or external
gates, thus building a nanotube dot tunnel-coupled to
contacts.7
Recent improvements in manipulation techniques have
allowed to suspend nanotubes between two contacts. In
this case nanotubes behave as mechanical resonators,8
with possible applications ranging from ultra-sensitive
mass sensing to displacement sensors.9 Among the differ-
ent mechanical vibrations10 the radial breathing mode is
the highest in energy11 -- 13 followed by the twist and the
stretching ones. The latter have received a lot of ex-
perimental attention 14 -- 17 also in view of the peculiar
features induced on transport, such as negative differen-
tial conductance15 or Franck-Condon blockade.17 Bend-
ing modes have usually energies lower than the experi-
mental temperature requiring external AC drivings.18,19
Transport experiments have been employed to analyze
the structure of nanotubes exploiting a scanning tun-
neling microscope (STM) tip.20 Effects such as spin-
charge separation were observed studying the differential
conductance as a function of the tip position.21 Super-
conducting probes have been used to extract the non-
equilibrium electron energy distribution function.22 Also,
the effects of chemical or magnetic impurities adsorbed
along the nanotube were considered.23 -- 28
Scanning tunnel microscopy experiments have also been
performed on suspended nanotubes. In particular, it has
been shown how electrons injected from a tunnel micro-
scope tip can excite, detect and control a specific vibra-
tional mode.11 -- 13
Owing to their small waist (of the order of some nm)
nanotubes behave as a one-dimensional interacting elec-
tronic system.2,3 Typically, correlated quantum systems
are studied by means of numerical techniques.29 -- 32 How-
ever, due to their inherently one-dimensional nature, car-
bon nanotubes are described in terms of a Luttinger
model.33,34 In this context, transport from a tunneling tip
to a static nanotube has been recently considered.28,35 -- 39
The coupling between the electrons and vibrational
modes has been extensively studied in literature.40 -- 47
In most cases the simple Anderson-Holstein model has
been employed,48,49 in which the vibron couples only
to the total charge neglecting the spatial modulation of
the charge density. The Anderson-Holstein interaction
yields position-independent Franck-Condon factors50,51
with visible effects in transport properties.52 -- 57
Recently, a microscopic theory involving the coupling
with spatial fluctuations of the nanotube electronic den-
sity has also been developed58 in order to explain anoma-
lous transport behaviors.58
In this paper we investigate the possibility of creating
an electrical probe for the stretching vibrational modes
of a suspended carbon nanotube, by means of a scanning
tunnel microscope tip. Building on the theory outlined
in Ref. 58, we describe the coupling between vibrons and
total charge as well as the spatial charge density modu-
lations. This coupling gives rise to a position-dependent,
electron-vibron coupling which strongly affects the trans-
port properties. Position-dependent tunneling rates and
conductance arise. This allows to obtain precise infor-
mations about the vibrational mode of the nanotube.
Effects are visible in metallic nanotubes and are more
pronounced in semiconducting ones.
The paper is structured as follows. In Sec. II A a Lut-
tinger liquid model for a carbon nanotube with open
boundary conditions is introduced. In Secs. II B-II C the
lattice vibrations, the electron-vibron coupling and its
diagonalization are discussed. Section II D is devoted to
the transport properties. Our results are illustrated and
commented in Sec. III. Conclusions are drawn in Sec. IV.
1
1
0
2
t
c
O
7
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
6
6
6
1
.
8
0
1
1
:
v
i
X
r
a
2
II. MODEL AND METHODS
A. Modeling a carbon nanotube quantum dot
The electronic properties of the CNT are characterized
by the wrapping vector wn,m = na+1 + ma−1, where a±1
represent the basis vectors of the graphene lattice.2 Due
to the wrapped nature of the system, the energy spec-
trum is composed of subbands corresponding to trans-
verse excitations along the waist of the tubule. In a typ-
ical experiment only the lowest-lying subband is occu-
pied,2,3 giving a one dimensional character to the CNT.
In this regime both n-doped semiconducting CNTs (away
from the band gap) and metallic CNTs can be described
in the low energy sector as Luttinger liquids with four
branches,59 -- 63 labeled by α = ±1, stemming from the
two Dirac valleys of the graphene, and by s = ±1, denot-
ing the z component of the electron spin (units /2).
FIG. 1: (Color online) Schematic setup of a CNT, suspended
between the two substrates S1 and S2 at positions x1 and x2.
A quantum dot with ends at x = 0 and x = L is embedded
in the CNT.
The system under investigation is schematically depicted
in Fig. 1, it consists of a CNT, suspended between two
substrates at x1 and x2 and free to vibrate. Embedded
in the CNT there is a quantum dot of length L with ends
at x = 0 and x = L. We assume x1 ≤ 0 and x2 ≥ L in
order to mimic a quantum dot inside the CNT, due to
geometrical defect or external gates, or to treat the CNT
itself as the quantum dot. In the following, we focus on
the description of the quantum dot with open boundary
conditions.
The bosonized hamiltonian is H =(cid:80)
Hj with
j
Hj =
1
2
Ej N 2
j +
†
ωj(q)b
j(q)bj(q) ,
( = 1)
(1)
where j ∈ {ρ+, ρ−, σ+, σ−} are the four linear combina-
tions of states in the α, s branches that diagonalize the
Coulomb interaction. Here, Nj represent the zero modes
counting the excess electrons in the j sector
(cid:88)
q
(cid:88)
(cid:88)
α,s
(cid:88)
(cid:88)
α,s
Nρ+ =
Nα,s
Nσ+ =
s Nα,s
;
;
Nρ− =
Nσ− =
α Nα,s ;
αs Nα,s .
α,s
α,s
The bosonic operators bj(q) trigger collective excitations
of the electron system with momentum q = πn/L with
FIG. 2: (Color online) Fermi velocity vF of a semiconducting
CNT of length L = 400 with N0 electrons and different CNT
waist lengths wn,m: blue (solid) 1 nm - such as for (3,2),
purple (dashed) 2 nm - such as for (5,4), yellow (dotted) 3
nm - such as for (8,6), green (dash-dotted) 4 nm - such as for
(11,7).
n ∈ N∗. They are connected to the α, s modes by a
Bogoljubov transformation.59,60 Note that the mode j =
ρ+ represents the total charge of the system.
The collective modes propagates with velocities vj =
vF/gj with gρ+ = g and gj = 1 ∀j (cid:54)= ρ+. Here g parame-
terizes the strength of electron scattering, with g < 1 for
repulsive interactions. Note that only the velocity of the
total charge mode is renormalized. The corresponding
energies are ωj(q) = vjq and Ej = πvj/4gjL.
The value of the Fermi velocity vF depends on the prop-
erties of the CNT. For a metallic CNT (n − m/3 ∈ N )
the dispersion relation is linear with vF = v0 = 8·105 m/s
around the degenerate point ¯k. In the following, we will
assume an effective n-doping with a shift of EF towards
higher energy values and new Fermi points k(±)
F = ¯k± qF
with qF = EF/vF.
In a semiconducting CNT the conduction and valence
bands are separated at momentum ¯k(cid:48) by the direct gap2
∆ =
4πv0
3wn,m ,
(2)
√
with wn,m = a
n2 + nm + m2 the waist length of the
CNT. We will consider n-doped semiconducting nan-
otubes with EF > ∆/2, having chosen the energy ref-
erence to lie in the middle of the band gap. Doping
gives rise to two new Fermi points k(±)
F = ¯k(cid:48) ± qF where
qF = 2m∗√
0 the effective
mass.2 Around the new Fermi points, the Fermi veloc-
ity is
EF − ∆ with m∗ = ∆/2v2
vF =
3wn,mN0
8L
,
(3)
with N0 the total number of excess electrons in the quan-
tum dot. The dependence of vF as a function of N0 is
shown in Fig. 2. One observes a lower velocity with re-
spect to the metallic case.
The electron field operator Ψs(r) ≡ Ψs(x, y) has to sat-
isfy open-boundaries conditions Ψs(0, y) = Ψs(L, y) = 0.
It can be written in the bosonized form
Ψs(r) =
fr,α(r)eirqFx ψ+1,rα,s(rx)
(4)
(cid:88)
(cid:88)
r=±1
α=±1
in terms of the right-movers field operators
ψ+1,α,s(x) =
where
φj(x) =
e−iθα,s ei πx
4L ( Nρ+ +α Nρ− +s Nσ+ +αs Nσ− ) ·
ηα,s√
2πa
2 [ φρ+ (x)+α φρ− (x)+s φσ+ (x)+αs φσ− (x)] ,
i
e
(cid:114) π
(cid:88)
qL
(cid:26) 1√
(cid:104)bj(q) − b
gj
cos (qx)
(cid:104)bj(q) + b
(cid:105)(cid:111)
.
†
j(q)
(cid:105)
†
j(q)
q
√
+ i
gj sin(qx)
(5)
(6)
Here ηα,s are Majorana fermions, [θα,s, Nα,s] = i, and
a is the length cutoff. The functions fr,α(r) in Eq. (4)
consist of a superposition of wavefunctions for pz orbitals,
peaked around the positions of atoms in the CNT and
oscillating with a typical wave vector K0 ∝ a−1 where
a ≈ 2.5· 10−10 m.59,60 Their specific form depends on the
type of nanotube under consideration and will be not
discussed here.
(cid:90)
(cid:90) x>
x<
(cid:104)
3
The coupling between electrons and vibrations can be
microscopically derived starting from the tight-binding
theory of a distorted CNT lattice.42,64 For the typical
experimental situations one has L (cid:38) 100 nm then a con-
tinuum elastic model is appropriate with40
(9)
dr ρ(r)∂x up(r) ,
Hd−v = c
Here40 c ≈ 30 eV and ρ(r) =(cid:80)
s
Ψ†
s(r) Ψs(r) is the elec-
tronic density operator, with Ψs(r) given by Eq. (4).
It consists of two components: a long wavelength part
ρLW(r) and an oscillatory contribution ρSW(r) fluctu-
0 ∝ a. This latter compo-
ating on a length scale K−1
nent, does not make sizeable contributions since q0 (cid:28)
K0. Under the realistic assumption of strongly local-
ized atomic orbitals2,3 with negligible overlapping, the
electron-vibron coupling becomes
Hd−v = c
dx ρLW(x)∂x up(x) ,
(10)
with x< = max{0, xv0}, x> = min{xv1, L} and
ρLW =
Nρ+
L
+
1
2π
φρ+(x) + x → −x
∂x
,
(11)
written here directly in its bosonized form.
(cid:105)
B. Lattice vibrations and electron-vibron coupling
C. Diagonalizing the electron-vibron coupling
We consider the case of a vibrating portion of the CNT
(the vibron), of size L, located between xv0 and xv1. As
confirmed in a recent experiment,58 the vibrating part
can be different from the CNT dot. Thus, we will formu-
late the theory in this most general case. We focus the
description on the stretching mode. The p-th mode has
energy ω0 = pπvs/L with vs ≈ 2.4 · 104 m/s the veloc-
ity of the stretching modes which is approximately non-
dispersive. In most experiments the fundamental mode
with p = 1 is observed.15,17 For these reasons, we will
concentrate to the case of small p ≤ 3. The p-th mode is
described as a harmonic oscillator
2
P0
2M
M ω2
0
X 2
0 ,
Hv =
+
(7)
where M = 2πwn,mLρ0 is the vibron mass with ρ0 ≈
6.7 · 10−7 Kg/m2 the graphene density and X0 is the
amplitude operator of the strain field
2
(cid:20)
(cid:21)
√
2 X0 sin
up(r) =
π(x − xv0)
L
p
.
(8)
The latter represents a standing wave with momentum
±q0 with q0 = pπ/L.
ρ+ + H (pl)
h = H (0)
and H (pl)
ρ+ =(cid:80)
The relevant terms of the electron-vibron coupling are
ρ+ + Hv + Hd−v with H (0)
/2
q ωρ+(q)bρ+(q)bρ+(q). Introducing Bµ =
µ we have
ibρ+(πµ/L) and(cid:112)2ωρ+(πµ/L) Xµ = Bµ + B†
(cid:32) P 2
ρ+ = Eρ+
N 2
ρ+
(cid:33)
(cid:88)
M ω2
0
h =
N 2
ρ+
+
+ ω2
µ
X 2
µ
2
µ
2
1
Eρ+
2
√
P 2
0
2M
+
√
+
M C0 X0 Nρ+ +
M X0
2
0 +
µ≥1
Cµ Xµ ,
X 2
(cid:88)
µ≥1
with [ Xµ, Pν] = iδµ,ν, ωµ = µω1/g, ω1 = πvF/L.
terms of these new variables the density operator is
(cid:114) 2πvF
(cid:88)
L3
µ≥1
(cid:16) πµx
(cid:17) Xµ .
L
µ cos
(13)
ρLW(x) =
Nρ+
L
+
The last term in Eq. (12) describes a central harmonic os-
cillator (vibron) linearly coupled to a infinity of harmonic
oscillators (plasmon modes of the dot). Note that, for
reasonable experimental parameters and considering the
lowest stretching modes, one always has ωµ > ω0 both
for metallic and semiconducting CNTs. Additionally, the
vibron is also coupled to the total average charge Nρ+ on
(12)
In
4
the quantum dot in analogy to the Anderson-Holstein
model. The coupling coefficients are
√
C0 =
2λmω3/2
0 J0
where (κ ≥ 0)
(cid:90) x>
Jκ =
1
L
and
dx cos
x<
λm =
√
ω1Jµ
(14)
,
(15)
(cid:105)
0
; Cµ≥1 = 2λmω3/2
L
cos
(cid:104) κπx
(cid:104) pπ
(cid:105)
L (x − xv0)
(cid:112)ρ0πwn,mvs
c
.
vs
Taking as a reference2,3 a waist length of about 2 nm,
one has λm ≈ 2. Note that a recent experiment65 reports
a larger c which leads to a larger λm. One finds
Jκ = J (0)
κ θ(x1−L−0+) , (17)
κ θ(−0+−xv0)+J (+)
κ +J (−)
with θ(x) the Heavyside step function and
κδ2 {sin (πκξ0) − (−1)p sin [πκ(ξ0 + δ)]}
π(p2 − κ2δ2)
pδ sin (πpξ0/δ) − κδ2 sin (πκξ0)
π(p2 − κ2δ2)
,
,
J (0)
κ =
J (−)
κ =
J (+)
κ =
(−1)pκδ2 sin [πκ(ξ0 + δ)]
− pδ(−1)κ sin [πpδ(1 − ξ0)/δ]
π(p2 − κ2δ2)
π(p2 − κ2δ2)
where δ = L/L and ξ0 = xv0/L.
X0 Nρ+ with (cid:96)−1
Let us now comment the general features of the cou-
pling depending on the relative size and position of dot
and vibron. When the vibron is much larger than the
dot (δ (cid:29) 1) and the latter is embedded into it one has
Jκ ≈ δκ,0, namely in the large vibron limit the coupling to
the charge density fluctuations vanishes and only the con-
ventional Anderson-Holstein coupling survives.
In this
limit, the electron-vibron coupling reduces to the stan-
dard form66 ω0λm(cid:96)−1
M ω0, and the
coupling constant is λm.
The most interesting case occurs when the vibron is
smaller than the dot and embedded into it.
In this
regime, one finds J0 ≡ 0, while Jκ≥1 (cid:54)= 0. This fact
signals a radical departure from the Anderson-Holstein
model: the coupling between electrons and vibrons oc-
curs only via the spatial fluctuations of the electron den-
sity.
We now turn to the diagonalization of the electron-vibron
coupling. The terms linear in Xµ in Eq. (12) can be
exactly diagonalized,67 leading to
0 =
√
0
(cid:33)
¯X 2
µ
2
(cid:32) ¯P 2
Nρ+ ,
+ Ω2
µ
µ
2
¯Xν
(cid:88)
µ≥0
k0ν
Eρ+
N 2
ρ+
1
2
√
h =
+
M C0
+
(cid:88)
ν≥0
z2 = ω2
0 +
,
with
√
with ην =
(16)
with
(cid:16) Xµ, Pµ
(cid:17)
=
(cid:88)
ν≥0
(cid:16) ¯Xν, ¯Pν
(cid:17)
.
kµν
(19)
In order to diagonalize the term ∝ Nρ+ a Lang-Firsov
canonical transformation is used
(cid:80)
U = e
−i Nρ+
√
ν≥0 ην
¯Pν ,
(20)
which finally casts the hamiltonian into the diagonal form
M C0k0ν/(Ω2
ν
M ). This leads to a shift
¯Xν → ¯Xν − ην Nρ+ ,
(21)
(cid:1) N 2
+
ρ+
(cid:32) ¯P 2
µ
2
(cid:88)
µ≥0
(cid:33)
+ Ω2
µ
¯X 2
µ
2
, (22)
h =
1
2
(cid:0)Eρ+ − ∆Eρ+
(cid:80)
with ∆Eρ+ = C 2
0
ν≥0(k2
0ν/Ω2
ν).
The energies Ωµ of the new eigenmodes are the roots of
the secular equation
(cid:88)
ν≥1
C 2
ν
z2 − ν2ω2
1
;
(23)
kµν =
k0ν =
Cµ
ν − µ2ω2
(cid:88)
Ω2
1 +
1
(with µ ≥ 1) ,
k0ν
(24)
C 2
µ
ν − µ2ω2
1)2
(Ω2
µ≥1
.
(25)
−1/2
As can be clearly seen, the modes with µ ≥ 1 have
FIG. 3: Energy of the lowest eigenmode. (a) Plot of Ω0/ω0
as a function of α; (b) Plot of Ω1/ω1 as a function of α. In
all figures, δ = 1, xv0 = 0, p = 1, g = 1 and λm = 2.
energies Ωµ (cid:38) µω1 and represent blue-shifted dressed
plasmons.
The lowest-lying solution, on the other
hand, has Ω0 < ω0 and represents a dressed vibronic
mode red-shifted by the electron-vibron interaction. By
inspecting Eq. (23) one always obtains a real solution
(18)
1 > (cid:80)
0ω2
µ≥1 C 2
for Ωµ with µ ≥ 1. On the other hand, the existence
of a real solution for Ω0 requires ω2
µ/µ2.
When this condition is not fulfilled, the Wentzel-Bardeen
instability occurs.41 In our calculations we have always
checked that for realistic parameters the system does
not exhibit this instability. The energy of the dressed
vibronic mode is very sensitive to the ratio α = vF/vs
between the Fermi and the sound velocity. While for
α = 32, corresponding to the case of a metallic CNT,
one has Ω0 ≈ ω0, for lower values of α, typical of a
semiconducting CNT, a suppression of Ω0 occurs, see
Fig. 3(a). Note that the dressed plasmons are almost
insensitive to the ratio α (cf. Fig. 3(b)).
The transformations in Eq. (19) and (20) affects the elec-
tronic field operator of Eq. (5). Up to an irrelevant phase
constant, the field φρ+(x) is
(cid:88)
(cid:88)
µ≥0
ν≥1
φρ+(x) =
αµ(x) ¯Xµ + βµ(x) ¯Pµ,
(26)
where
αµ(x) =
βµ(x) =
√
√
2ω1
M ηµ +
(cid:17)
(cid:16) πνx
(cid:88)
L
kνµ
ν
kνµ sin
(cid:114) 2
ω1
ν≥1
(cid:16) πνx
(cid:17)
L
(27)
. (28)
cos
5
to the contacts through the CNT. Additionally, a back
gate is capacitively coupled to tune the effective charge
on the CNT-dot. From now on, we will focus on the
most interesting regime, namely that of a quantum dot
along all the CNT with a vibron imbedded into it. The
hamiltonian for the vibrating CNT is then
(cid:16) Nρ+ − Ng
(cid:17)2
+
(cid:88)
µ≥0
HCNT =
1
2
Eρ+
¯P 2
µ
2
+
Ω2
µ
2
¯X 2
µ+
(cid:88)
j(cid:54)=ρ+
Hj ,
where Ng represents the charge induced by the back gate
voltage Vg. The dot is laterally coupled to the two Fermi
contacts, via the tunneling hamiltonian58
HT,L = t0
ψ+1,α,s(xj)cj,s(q) + h.c. ,
(29)
(cid:88)
(cid:88)
j=1,2
α,s,q
where t0 is the tunneling amplitude, cj,s(q) are the op-
erators for an electron with momentum q and spin s in
the non-interacting lead j and x1 = 0, x2 = L are the
position of the tunneling contacts.
The STM tip is modeled as a semi-infinite Fermi con-
tact, placed above the CNT at a position x along it. The
tunnel coupling is expressed in terms of the Fermi field
operator for the forward modes of the tip28,35 ψs,F(z) (z
is the coordinate along the tip with z = 0 at the vertex)
(cid:34)(cid:90) L
(cid:88)
(cid:35)
HT,T=
dy τ0(y − x)
†
ψ
+1,α,s(y)
ψs,F(0+) + h.c. .
0
α,s
D. Modeling transport
FIG. 4: Schematic setup of a STM transport experiment per-
formed on a suspended CNT. The quantum dot is the nan-
otube itself, biased with respect to the tip and two lateral
contacts. Electrons can flow through the system via the STM
tip at position (x) and at the contacts (x1,2). A back gate
allows to tune the effective charge on the dot.
Our task is to model an STM tunneling tip on a
CNT.11 -- 13 The setup is sketched in Fig. 4 and is com-
posed of a STM tip and two lateral contacts tunnel-
coupled to a suspended CNT. Tip and contacts are biased
in such a way that, for V > 0, electrons flow from the tip
The function τ0(x) = τ0ϕ(x) describes the geometry of
the tip, with 0 ≤ ϕ(x) ≤ 1 peaked around x = 0, where
ϕ(0) = 1. In the following we will assume a typical tip,
with an effective width of a few atomic cells of the CNT.
A voltage −V /2 is applied to the STM tip, while the lat-
eral contacts are kept at the same voltage V /2. Voltage
drops are assumed to occur symmetrically on the CNT.
More general potential distributions do not affect the re-
sults at a qualitative level.
We will consider the sequential tunneling regime, treat-
ing the tunnel couplings to the lowest perturbative order.
Since we are interested into the low-energy transport
regime (eV kBT ≈ Ω0) we disregard the dynamics of
the modes µ ≥ 1. Furthermore, we will consider the
relevant situation of a damped vibronic mode, with a
thermal equilibrium distribution at temperature T .
The eigenstates of the suspended CNT can be expressed
by {Nα,s}(cid:105) specifying the distribution of excess elec-
trons in the channel α with spin s. We will consider
the resonance between the state of a closed shell with
N0 = 4κ, (κ integer) electrons and zero excess charges,
denoted as 0(cid:105) = 0, 0, 0, 0(cid:105), and N0 + 1 electrons in the
state α,s. Note that no qualitative difference in our re-
sults would occur, for a different value of N0. There
are four states with N0 + 1, electrons, denoted by α, s(cid:105),
each with one extra electron in the state α, s. They are
all degenerate, with energy Eρ+(1 − Ng)2/2 + 3ω1/8.
6
We set up a master equation for the reduced density
matrix, obtained tracing out the leads and vibron de-
grees of freedom - thus neglecting coherences among vi-
brational states.66,68,69 Upon the assumption of a STM
tip width of some unit cells, coherence effects between
states α, s(cid:105) and α(cid:48), s(cid:105) (α (cid:54)= α(cid:48)) are vanishing. Co-
herence between different spin states is also absent in
view of the absence of spin correlations in the contacts.
Therefore, the master equation reduces to a standard rate
equation for the occupation probability of the quantum
α,s Pα,s(cid:105)(t). The
steady-state current is then written, to lowest order, in
terms of tunneling rates
dot PN0 (t) = P0(cid:105)(t) ; PN0+1(t) = (cid:80)
I(x) = e
Γ(C)
outΓ(T)
in (x) − Γ(C)
Γin(x) + Γout(x)
in Γ(T)
out(x)
Γin/out(x) = Γ(T)
in/out(x) + Γ(C)
in/out
,
(30)
(31)
with
and
(cid:88)
(cid:88)
(cid:88)
α,s
Γ(T)
in (x) =
Γ(T)
0(cid:105)→α,s(cid:105)(x) ; Γ(T)
out(x) = Γ(T)
α,s(cid:105)→0(cid:105)(x) ,
Γ(C)
in =
Γ(j)0(cid:105)→α,s(cid:105)
; Γ(C)
out =
Γ(j)α,s(cid:105)→0(cid:105) ,
j
α,s
j
(cid:88)
of the Anderson-Holstein model,52,54 -- 56 appropriate for
large vibrons.
In that case, as discussed above, cou-
pling to the density fluctuations would vanish leading
to α0(x) = β0(x) = 0 and to a coupling simply given by
λmax which is clearly independent of the tunneling posi-
tion.
III. RESULTS
A. Local electron-vibron coupling
Let us analyze in details the space dependence of the
electron-vibron coupling λ(x) which determines the cur-
rent behavior. The coupling λ(x) depends both on ge-
ometrical parameters xv0 (the vibron origin), δ = L/L
(vibron length) and on physical ones α = vF/vs, λm de-
fined in Eq. (16) and the electronic interaction parameter
g.
We remind that the parameter α is affected by the metal-
lic or semiconducting nature of the CNT. In a metallic
CNT one finds α = 32. On the other hand, for a semicon-
ducting CNT lower values of α are possible (see later).
Figure 5 shows λ(x) for different vibron configurations
the rate associated to the tip (T) and to the contacts (C).
We quote here explicitly the expressions for the tunnel-in
processes, the tunnel-out rates are similar.
The lateral contact and tip rates are respectively
Γ(j)0(cid:105)→α,s(cid:105) = Γ0
Bl(xj)f (∆E + lΩ0 + eV /2) ,(32)
Γ(T)
0(cid:105)→α,s(cid:105)(x) = Γ(T)
0
Bl(x)f (∆E + lΩ0 − eV /2) .(33)
(cid:88)
(cid:88)
l≥0
l≥0
0 = 2πν0τ02, ν0 is the leads
Here, Γ0 = 2πν0t02, Γ(T)
density of state and f (E) the Fermi function. The rates
are then a superposition of Fermi functions at energies
(cid:19)
(cid:18) 1
2
∆E = Eρ+
− Ng
+
3
8
ω1 ,
(34)
shifted by the energy lΩ0, representing the contribution
of a transport channel exciting l vibron quanta. The
weights Bl(x) considered in the regime kBT (cid:28) Ω0 are52
where
Bl(x) =
λ2l(x)
l!
e−λ2(x) ,
λ2(x) =
1
2Ω0
α2
0(x) +
Ω0
2
β2
0 (x)
(35)
(36)
FIG. 5: (Color online) Local electron-vibron coupling λ(x) as
a function of the tip position x for: (a) δ = 1, xv0 = 0, p = 1;
(b) as above but p = 2; (c) δ = 0.4, xv0 = 0.15L, p = 1;
(d) as above but p = 2. In all panels red (solid) lines denote
a metallic CNT with α = 32, blue (dashed) lines denote a
semiconducting CNT with α = 5. Other parameters: λm = 2
and g = 1. The shaded plots on top of the panels depict the
amplitude of the strain field up(x). The arrow in Panel (c)
denotes the tip position for the conductance shown in Fig. 8.
represents the local electron-vibron couplingstrength,58
see Eqns. (27,28). This is in sharp contrast to the case
and CNT types. It can be seen that the electron-vibron
coupling strength for a metallic CNT (solid red lines) is
smaller than that for a semiconducting CNT. Indeed, for
a semiconducting CNT, the velocities of the electronic
and vibronic subsystems are closer, which implies a more
favorable interplay between them. In the rest of the pa-
per, we will choose α = 5 to model a semiconducting
CNT and α = 32 for the metallic one.
The amplitude of the electron-vibron coupling is maxi-
mal in the region where the strain field is maximum. In-
deed, λ(x) closely follows the amplitude of up(x), which
is sketched on top of the panels of Fig. 5. For δ < 1,
this implies a particularly sizeable λ(x) only in the re-
gion where the vibron sits, see Figs. 5(c,d). Coupling to
higher vibronic modes produces more oscillations, as can
be seen in Figs. 5(b,d). It also makes the electron-vibron
coupling strength weaker. Figure 6 shows the comparison
7
neling rates. Figure 7 shows the ratio λL/λR as a func-
tion of δ for a vibron with origin at xv0 = 0.1L. At small
values of δ the vibron is asymmetrically located near the
left tunnel barrier. As a consequence, λL > λR. This
mechanism is at the origin of the systematic suppres-
sion of conductance traces in a recent experiment.58 For
increasing δ the situation evolves towards a more sym-
metric setup and indeed for δ = 0.8, corresponding to a
symmetric vibron with respect to the CNT, one recovers
λL = λR.
B. Transport properties
Figure 8 shows the density plot of the differential
conductance G = ∂I/∂V in the (V, Ng) plane for the
situation depicted in Fig. 5(c), semiconducting case.
The large white areas at small V are the Coulomb
FIG. 6: (Color online) Local electron vibron coupling λ(x) as
a function of x for δ = 1, xv0 = 0 and different vibron modes:
red (solid) p = 1, green (dashed) p = 2, blue (dotted) p = 3.
The thin lines are the maxima of λ(x). Other parameters:
α = 5, λm = 2, g = 1.
between the first three vibronic modes. The intensity of
the electron-vibron coupling strength decreases with the
√
increasing order of the vibronic mode. Denoting λp the
maximum of λ(x) for the p mode, we find λp = λ1/
p.
We now briefly comment on the value of the electron-
FIG. 8: (Color online) Semiconducting CNT. Differential con-
ductance G (units e2Γ(T)
0 /Ω0) as a function of Ng and V (units
Ω0/e) for a vibron originating at xv0 = 0.15L with δ = 0.4,
p = 1 and a tip at x = 0.35L. Other parameters: λm = 2,
α = 5, g = 1, kBT = 0.15 Ω0 and A = Γ0/Γ(T)
0 = 100.
blockade regions where transport is interdicted and the
CNT is occupied by N0 or N0 + 1 electrons. Within
the transport region, delimited by the two most intense
conductance traces, a series of equally spaced lines are
clearly visible. They correspond to the excitation of
the vibronic mode at energy Ω0. We consider different
tunneling amplitudes through the tip and the lateral
contacts, introducing the asymmetry A = Γ0/Γ(T)
.
0
FIG. 7: (Color online) Ratio of the coupling strengths λL/λR
(see text) as a function of δ for a vibron with origin at
xv0 = 0.1L and p = 1. The shaded plots schematically depict
the amplitude of the strain field of the vibronic mode up(x).
Other parameters: α = 5, λm = 2 and g = 1.
We will concentrate the discussion on the regime kBT <
Ω0, quoting for simplicity analytical expressions for A (cid:29)
1 only, realistic in an STM experiment. Exploiting the
fact that λL,R (cid:28) 1 we assume Bl(xj) ≈ δl,0. In the linear
regime (V → 0) the conductance is then
vibron coupling at the position of the tunneling barriers
λL ≡ λ(0) and λR ≡ λ(L), which govern the lateral tun-
Glin ≈
cosh
(37)
(cid:104) β∆E
2βe2Γ(T)
2 − 1
2 ln(4)
(cid:105)
0 B0(x)
(cid:104) β∆E
(cid:105) ,
2
cosh
8
with ∆E in Eq. (34). The logarithmic factor ln(4) stems
from the fourfold degeneracy of the state with N0 + 1
electrons. The amplitude of the linear conductance is
modulated by the factor
B0(x) = e−λ2(x) .
(38)
Therefore, the conductance is suppressed in the region
where the electron-vibron coupling is large.
In the nonlinear regime (V > kBT ) one finds
(cid:88)
(cid:104)
Bl(x)
(cid:105) .
Gnonlin ≈ βe2Γ0
2
l≥0
cosh
β ∆E+lΩ0−eV /2
2
(39)
Equation (39) represents a fan of equally-spaced conduc-
tance peak lines located at Eρ+(1 − 2Ng) + 3ω1/8Eρ+ +
lΩ0 − eV /2 = 0, thus with negative slope in the (V, Ng)
plane, see Fig. 8. They originate by the tunneling from
the STM tip to the CNT, triggering vibronic excitations.
We note that, because of the smallness of λL,R, the trig-
gering process due to the tunneling on the contacts bar-
riers is strongly suppressed (since Bl(xj) ≈ δl,0) with a
corresponding absence of conductance lines with positive
slope. Each of the above peaks is weighted by Bl(x)
which in turn conveys informations on λ(x). This is par-
ticularly clear for the l-th (l ≥ 1) nonlinear conductance
peak. Indeed, for λ(x) < 1 (which is the case considered
in our calculations, see Fig. 5) one finds that Bl(x) is a
monotonically increasing function of λ(x) - see Eq. (35)
- which implies an increase of the conductance for in-
creasing coupling strength. This fact allows to directly
map the spatial modulations of the nonlinear differential
conductance into modulations of λ(x).
To be more specific, let us consider the resonance case
∆E = 0 ⇐⇒ Ng =
1
2
+
3ω1
8Eρ+
(40)
and study G. As is clear by inspecting Figs. 9(a-d), the
differential conductance G exhibits position-dependent
modulations in close agreement to the behavior of λ(x).
The most striking features show up indeed near the vi-
bron position, where G is suppressed for V ≈ 0, and is
enhanced for eV ≈ 2lΩ0 (l = 1, 2, . . .), see Fig. 5.
For the case of a metallic CNT, shown in Fig. 10, the spa-
tial modulations of the conductance are less pronounced
due to the decreased intensity of the electron-vibron cou-
pling with respect to the semiconducting case.
The close resemblance of the spatial modulations of the
non linear G with λ(x) is supported studying the conduc-
tance at fixed bias shown in Fig. 11 for eV = 2Ω0 and
eV = 4Ω0. Clearly G is enhanced where λ(x) is large.
This confirms that position-resolved conductance maps
are source of valuable informations about the intensity
of the strain field along the CNT and consequently on
the location and size of the vibron mode.
FIG. 9: (Color online) Semiconducting CNT: Plot of G (units
e2Γ(T)
0 /Ω0) as a function of the tip position x and bias voltage
V (units Ω0/e) at resonance Ng = (1/2) + (3ω1/8Eρ+ ) and
(a) δ = 1, xv0 = 0 and p = 1; (b) same as in (a) but for
p = 2; (c) δ = 0.4, xv0 = 0.15L and p = 1; (d) same as in
(c) but for p = 2. Other parameters: λm = 2, α = 5, g = 1,
kBT = 0.15 Ω0 and A = 100.
(Color online) Metallic CNT: Plot of G (units
FIG. 10:
e2Γ(T)
0 /Ω0) as a function of the tip position x and bias voltage
V (units Ω0/e) at resonance Ng = (1/2) + (3ω1/8Eρ+ ) and
(a) δ = 1, xv0 = 0 and p = 1; (b) same as in (a) but for
p = 2; (c) δ = 0.4, x0 = 0.15L and p = 1; (d) same as in (c)
but for p = 2. Other parameters: λm = 2, α = 32, g = 1,
kBT = 0.15 Ω0 and A = 100.
9
Figure 12(a) shows the position-resolved nonlinear con-
ductance at eV = 2Ω0 for increasing Coulomb interaction
strength (decreasing values of g). Clearly, conductance
is suppressed in turns, signaling the suppression of λ(x).
This fact can be explained in terms of an increase of the
velocity of the charged mode vρ+ = vF/g which induces
an effective parameter α higher than that of the nonin-
teracting case.
Concerning the role of the asymmetry between the
tip rate and the leads rate, Fig. 12(b) shows that the
amplitude of the conductance modulations is decreased
when making the tunnel barriers more symmetric with
a collapse when reversing the asymmetry A < 1 (i.e.
making the contacts more opaque than the STM tip).
This can be understood by observing that for A (cid:29) 1
the current is dominated by the slowest barrier which
is the STM one. This implies that the space-dependent
tunneling rate can be efficiently probed in this regime.
IV. CONCLUSIONS
In this paper we have shown how transport measure-
ments, performed with a scanning tunnel microscope tip
on a suspended carbon nanotube, can bring information
about its vibrational stretching dynamics. This theory
predicts a position-dependent coupling constant, which is
larger in the region where the vibron is located.
The position-dependent coupling constant strongly af-
fects the tunneling rate of electrons through the tip and
has relevant consequences in the transport spectra.
In
particular, we showed that conductance maps in the lin-
ear and nonlinear regime, obtained sweeping the tip along
the nanotube, are closely connected to the local coupling
constant and allow to localize the position and size of the
vibron. Effects can be more pronounced in semiconduct-
ing nanotubes due to the reduced Fermi velocity which
matches more closely the speed of the vibrational mode.
The role of electronic interactions and of the asymmetry
between tip and metal contact tunnel barriers have also
been addressed.
This work could inspire a new class of experiments which
aim at studying the vibrational degrees of freedom of a
nanotube by means of electrical measurements.
Acknowledgments. The authors acknowledge stimulating
discussions with V. Cataudella, E. Mariani, A. Nocera, E.
Paladino and C. Stampfer. Financial support by the EU-
FP7 via ITN-2008-234970 NANOCTM is also gratefully
acknowledged.
(Color online) Differential conductance G (units
FIG. 11:
e2Γ(T)
0 /Ω0) as a function of the tip position x for Ng =
(1/2)+(3ω1/8Eρ+ ) and eV = 2Ω0 (red solid line) or eV = 4Ω0
(blue dashed line) for a metallic CNT: (a) δ = 1, xv0 = 0
and p = 1; (b) same as in (a) but for p = 2; (c) δ = 0.4,
xv0 = 0.15L and p = 1; (d) same as in (c) but for p = 2.
Other parameters: λm = 2, α = 32, g = 1, kBT = 0.15 Ω0
and A = 100.
C.
Interaction and asymmetry effects
We close by briefly commenting about the role of
electron-electron interactions and that of the barriers
asymmetry.
FIG. 12: (Color online) (a) Conductance G (units e2Γ(T)
0 /Ω0)
as a function of the tip position x for decreasing values of g
from g = 1 (noninteracting, lightest gray) to g = 0.2 (strongly
interacting, black); (b) Plot of G for different asymmetries (see
key) and g = 1. Other parameters: δ = 1, xv0 = 0, p = 1,
λm = 2, α = 5, kBT = 0.15 Ω0 and eV = 2Ω0.
1 S. Iijima, Nature (London) 354, 56 (1991).
2 J.-C. Charlier, X. Blase, and S. Roche, Rev. Mod. Phys.
79, 677 (2007).
3 R. Saito, G. Dresselhaus, and M. S. Dresselhaus, 'Physical
Properties of Carbon Nanotubes', Imperial College Press
(1998).
10
4 D. H. Cobden and J. Nygard, Phys. Rev. Lett. 89, 046803
Phys. Rev. A 75, 015602 (2007).
(2002).
5 M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra,
A. Zettl, A. Thess, and R. E. Smalley, Science 725, 1922
(1997).
6 S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley,
30 J. Qian, B. I. Halperin, and E. J. Heller, Phys. Rev. B 81,
125323 (2010).
31 U. De Giovannini, F. Cavaliere, R. Cenni, M. Sassetti, and
B. Kramer, Phys. Rev. B 77, 035325 (2008).
32 F. Cavaliere, U. De Giovannini, M. Sassetti, and B.
L. J. Geerligs, and C. Dekker, Nature 386, 474 (1997).
Kramer, New J. Phys. 11, 123004 (2009).
7 H. W. C. Postma, T. Teepen, Z. Yao, M. Grifoni, and C.
33 T. Giamarchi, Quantum Physics in One Dimension, Ox-
Dekker, Science 293, 76 (2001).
8 A. K. Huttel, G. A. Steele, B. Witkamp, M. Poot, L. P.
Kouwenhoven, and H. S. J. van der Zant, Nano Lett. 9,
2547 (2009).
9 C. Stampfer, A. Jungen, R. Linderman, D. Obergfell, S.
Roth, and C. Hierold, Nano Lett. 6, 1449 (2006).
10 M. Poot and H. S. J. van der Zant, to appear on Phys.
ford Science Publications (2004).
34 R. Egger and A. O. Gogolin, Phys. Rev. Lett. 79, 5082
(1997).
35 D. Bercioux, G. Buchs, H. Grabert, and O. Groning, Phys.
Rev. B 83, 165439 (2011).
36 S. Eggert, Phys. Rev. Lett. 84, 4413 (2000).
37 A. Cr´epieux, R. Guyon, P. Devillard, and T. Martin, Phys.
Rep., arXiv:1106.2060v1.
Rev. B 67, 205408 (2003).
11 B. J. Leroy, S. G. Lemay, J. Kong, and C. Dekker, Appl.
38 A. V. Lebedev, A. Cr´epieux, and T. Martin, Phys. Rev. B
Phys. Lett. 84, 4280 (2004).
12 B. J. LeRoy, S. G. Lemay, J. Kong, and C. Dekker, Nature
432, 371 (2004).
13 B. J. LeRoy, I. Heller, V. K. Pahilwani, C. Dekker, and S.
G. Lemay, Nano Lett. 7, 2937 (2007).
14 V. Sazonova, Y. Yaish, H. Ustunel, D. Roundy, T. A. Arias,
and P. L. McEuen, Nature 431, 284 (2004).
15 S. Sapmaz, P. Jarillo-Herrero, Y. M. Blanter, C. Dekker,
and H. S. J. van der Zant, Phys. Rev. Lett. 96, 026801
(2006).
16 A. K. Huttel, B. Witkamp, M. Leijnse, M. R. Wegewijs,
and H. S. J. van der Zant, Phys. Rev. Lett. 102, 225501
(2009).
17 R. Leturcq, C. Stampfer, K. Inderbitzin, L. Durrer, C.
Hierold, E. Mariani, M. G. Schultz, F. von Oppen, and K.
Ensslin, Nat. Phys. 5, 327 (2009).
18 A. K. Huttel, H. B. Meerwaldt, G. A. Steele, M. Poot, B.
Witkamp, L. P. Kouwenhoven, and H. S. J. van der Zant,
Phys. Status Solidi B 247, 2974 (2010).
19 G. A. Steele, A. K. Huttel, B. Witkamp, M. Poot, H. B.
Merrwaldt, L. P. Kouwenhoven, and H. S. J. van der Zant,
Science 325, 1103 (2009).
20 H. Lin, J. Lagoute, V. Repain, C. Chacon, Y. Girard, F.
Ducastelle, H. Amara, A. Loiseau, P. Hermet, L. Henrard,
and S. Rousset, Phys. Rev. B 81, 235412 (2010).
21 J. Lee, S. Eggert, H. Kim, S.-J. Kahng, H. Shinohara, and
Y. Kuk, Phys. Rev. Lett. 93, 166403 (2004).
22 Y.-F. Chen, T. Dirks, G. Al-Zoubi, N. O. Birge, and N.
Mason, Phys. Rev. Lett. 102, 036804 (2009).
23 W. Clauss, D. J. Bergeron, M. Freitag, C. L. Kane, E. J.
Mele, and A. T. Johnson, Europhys. Lett. 47, 601 (1999).
24 M. Furuhashi and T. Komeda, Phys. Rev. Lett. 101,
185503 (2008).
25 L. C. Venema, J. W. G. Wilder, J. W. Janssen, S. J. Tans,
H. L. J. T. Tuinstra, L. P. Kouwenhoven, and C. Dekker,
Science 283, 52 (1999).
26 S. G. Lemay, J. W. Janssen, M. van den Hout, M. Mooij,
M. J. Bronikowski, P. A. Willis, R. E. Smalley, L. P.
Kouwenhoven, and C. Dekker, Nature (London) 412, 617
(2001).
27 M. Ouyang, J.-L. Huang, and C. M. Lieber, Phys. Rev.
Lett. 88, 066804 (2002).
28 G. Buchs, D. Bercioux, P. Ruffieux, P. Groning, H.
Grabert, and O. Groning, Phys. Rev. Lett. 102, 245505
(2009).
29 S. H. Abedinpour, M. Polini, G. Xianlong, and M. P. Tosi,
71, 075416 (2005).
39 C. Bena, Phys. Rev. B 82, 035312 (2010).
40 H. Suzuura and T. Ando, Phys. Rev. B 65, 235412 (2002).
41 A. De Martino and R. Egger, Phys. Rev. B 67, 235418
(2003).
42 G. D. Mahan, Phys. Rev. B 68, 125409 (2003).
43 G. Pennington and N. Goldsman, Phys. Rev. B 68, 045426
(2003).
44 K. Flensberg, New J. Phys. 8, 5 (2006).
45 E. Mariani and F. von Oppen, Phys. Rev. B 80, 155411
(2009).
46 M. Verissimo-Alves, R. B. Capaz, B. Koiller, E. Artacho,
and H. Chacham, Phys. Rev. Lett. 86, 3372 (2001).
47 W. Izumida and M. Grifoni, New J. Phys. 7, 244 (2005).
48 A. Zazunov, D. Feinberg, and T. Martin, Phys. Rev. B 73,
115405 (2006).
49 X. Y. Shen, B. Dong, X. L. Lei, and N. J. M. Horing, Phys.
Rev. B 76, 115308 (2007).
50 J. Franck, Trans. Faraday Soc. 21, 536 (1926).
51 E. Condon, Phys. Rev. 28, 1182 (1926).
52 S. Braig and K. Flensberg, Phys. Rev. B 68, 205324 (2003).
53 J. Koch, F. von Oppen, and A. V. Andreev, Phys. Rev. B
74, 205438 (2006).
54 J. Koch and F. von Oppen, Phys. Rev. Lett. 94, 206804
(2005).
55 F. Haupt, F. Cavaliere, R. Fazio, and M. Sassetti, Phys.
Rev. B 74, 205328 (2006).
56 M. Merlo, F. Haupt, F. Cavaliere, and M. Sassetti, New J.
Phys. 10, 023008 (2008).
57 F. Cavaliere, G. Piovano, M. Sassetti, and E. Paladino,
New J. Phys. 10, 115004 (2008).
58 F. Cavaliere, E. Mariani, R. Leturcq, C. Stampfer, and M.
Sassetti, Phys. Rev. B 81, 201303(R) (2010).
59 H. Yoshioka and Y. Okamura, J. Phys. Soc. Jpn. 71, 2512
(2002).
60 M. Grifoni and L. Mayrhofer, Eur. Phys. J. B 56, 107
(2007).
61 T. Kleimann, F. Cavaliere, M. Sassetti, and B. Kramer,
Phys. Rev. B 66, 165311 (2002).
62 F. Cavaliere, A. Braggio, J. T. Stockburger, M. Sassetti,
and B. Kramer, Phys. Rev. Lett. 93, 036803 (2004).
63 F. Cavaliere, A. Braggio, M. Sassetti, and B. Kramer,
Phys. Rev. B 70, 125323 (2004).
64 R. A. Jishi, M. S. Dresselhaus, and G. Dresselhaus, Phys.
Rev. B 48, 11385 (1993).
65 K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and P.
Kim, Phys. Rev. Lett. 101, 096802 (2008).
66 G. Piovano, F. Cavaliere, E. Paladino, and M. Sassetti,
69 A. Donarini, A. Yar, and M. Grifoni, arXiv:1109.0723
Phys. Rev. B 83, 245311 (2011).
67 P. Ullersma, Physica (Amsterdam) 32, 27 (1966).
68 A. Metelmann and T. Brandes, arXiv:1107.3762 (2011).
(2011).
11
|
1304.0950 | 1 | 1304 | 2013-04-03T13:37:35 | Interplay of Aharonov-Bohm and Berry phases in gate-defined graphene quantum dots | [
"cond-mat.mes-hall"
] | We study the influence of a magnetic flux tube on the possibility to electrostatically confine electrons in a graphene quantum dot. Without magnetic flux tube, the graphene pseudospin is responsible for a quantization of the total angular momentum to half-integer values. On the other hand, with a flux tube containing half a flux quantum, the Aharonov-Bohm phase and Berry phase precisely cancel, and we find a state at zero angular momentum that cannot be confined electrostatically. In this case, true bound states only exist in regular geometries for which states without zero-angular-momentum component exist, while non-integrable geometries lack confinement. We support these arguments with a calculation of the two-terminal conductance of a gate-defined graphene quantum dot, which shows resonances for a disc-shaped geometry and for a stadium-shaped geometry without flux tube, but no resonances for a stadium-shaped quantum dot with a $\pi$-flux tube. | cond-mat.mes-hall | cond-mat |
Interplay of Aharonov-Bohm and Berry phases in gate-defined graphene quantum dots
Julia Heinl, Martin Schneider, and Piet W. Brouwer
Dahlem Center for Complex Quantum Systems and Institut fur Theoretische Physik,
Freie Universitat Berlin, Arnimallee 14, 14195 Berlin, Germany
(Dated: November 3, 2018)
We study the influence of a magnetic flux tube on the possibility to electrostatically confine elec-
trons in a graphene quantum dot. Without magnetic flux tube, the graphene pseudospin is responsi-
ble for a quantization of the total angular momentum to half-integer values. On the other hand, with
a flux tube containing half a flux quantum, the Aharonov-Bohm phase and Berry phase precisely
cancel, and we find a state at zero angular momentum that cannot be confined electrostatically. In
this case, true bound states only exist in regular geometries for which states without zero-angular-
momentum component exist, while non-integrable geometries lack confinement. We support these
arguments with a calculation of the two-terminal conductance of a gate-defined graphene quantum
dot, which shows resonances for a disc-shaped geometry and for a stadium-shaped geometry without
flux tube, but no resonances for a stadium-shaped quantum dot with a π-flux tube.
PACS numbers: 73.63.Kv, 73.22.Pr
I.
INTRODUCTION
In recent years, graphene has emerged as a promising
material for future nanoelectronical devices.1 -- 4 The pos-
sibility to confine electrons is of particular relevance in
this context. Experimental activity concentrates on con-
finement in quantum dots realized with etched graphene
structures5 -- 7 or graphene nanoflakes.8 Electrostatic con-
finement with the help of metal gates, which is standard
in semiconductor heterostructures, is problematic due to
the absence of a band gap in monolayer graphene. In par-
ticular, an electron that approaches a region of graphene
with zero carrier density -- the closest approximation to
an "electrostatic barrier" in graphene -- will penetrate
this region with unit probability if at normal incidence.
This phenomenon is known as "Klein tunneling".9 -- 11
Theoretical proposals suggest to use magnetic instead of
electric fields to shape quantum dots12 or induce a gap
in the spectrum.13
The statement that one cannot confine electrons in
graphene using gate potentials can be circumvented in
certain special cases.14 The reason is that Klein tunnel-
ing is effective only at perpendicular incidence, while the
reflection probability sharply increases away from nor-
mal incidence. Certain integrable geometries, such as
a disc,13,15 allow states that exclude perpendicular inci-
dence, so that electrons can be effectively confined in a
disc-shaped region of graphene with finite carrier den-
sity, surrounded by a carrier-free (i.e., undoped, intrin-
sic) graphene sheet. On the other hand, for geometries
with a chaotic classical dynamics, no such exclusion of
perpendicular incidence is possible, and one may expect
that no bound states exist in this case. In Ref. 14, as well
as in later studies,13,16,17 a circular and a stadium-shaped
quantum dot, as prototypes of integrable and chaotic ge-
ometries, were embedded in a carrier-free graphene re-
gion and coupled to source and drain contacts, as shown
schematically in Fig. 1. Bound states are then revealed
as sharp resonances in the two-terminal conductance.
FIG. 1: (Color online) The geometry under consideration:
A quantum dot (here with circular shape), consisting of a
region of graphene with a nonzero spatially uniform carrier
density surrounded by a carrier-free graphene layer, which
is coupled to leads in a two-terminal geometry. The total
system has rectangular shape of dimension L × W ; the size
of the quantum dot is denoted R. In this article we consider
the effect of a magnetic flux tube through the quantum dot
(indicated in red). If the flux tube carries half a flux quantum,
the Aharonov-Bohm phase precisely cancels the Berry phase
that is accumulated in a cyclic orbit inside the quantum dot.
the
Interestingly,
conductance of a carrier-free
graphene sheet with a stadium-shaped and disc-shaped
quantum dot showed resonant features that were quanti-
tatively different, but qualitatively similar.14,17 The quan-
titative difference concerns the scaling of the resonance
widths with the coupling to the leads, which is deter-
mined by the ratio R/L of the quantum dot size R and
the distance L between the source and drain contacts, see
Fig. 1. Whereas for the stadium-shaped quantum dot
the width was proportional to R/L for all resonances,
the disc-shaped quantum dot also featured much nar-
rower resonances, with a width that scaled proportional
to (R/L)n with n ≥ 3. The qualitative similarity was
that in the limit R/L → 0 both systems showed con-
ductance resonances at all. This contradicts the naive
classical expectation that there should be no resonances
for a chaotic geometry, because in a chaotic geometry
each electron eventually hits the dot boundary at per-
pendicular incidence, and an electron that hits the dot
boundary at perpendicular incidence exists the quantum
dot with unit probability. No resonant structures should
exist if the escape probability is unity after a finite time.
This deviation from the naive classical expectation
can be attributed to the Berry phase in graphene.
In
graphene, electrons are assigned a pseudospin that cor-
responds to the sublattice degree of freedom. The pseu-
dospin is locked to momentum. Upon completion of a
full rotation the electron collects a Berry phase of π.
This Berry phase has the important consequence that
the lowest possible angular momentum is
2 . Perpendic-
ular incidence on the boundary of the quantum dot cor-
responds to zero angular momentum, so that no states
with perpendicular incidence on the surface exist. This
then explains why a stadium-shaped quantum dot still
shows conductance resonances, in spite of the naive clas-
sical expectation that geometries with a chaotic classical
dynamics can not be used to confine electrons.
In order to support these arguments, in this article
we study gate-defined graphene quantum dots in which
the Berry phase is compensated by the Aharonov-Bohm
phase from a magnetic flux tube through the quantum
dot. (The interplay of the two phase shifts is also used
experimentally to identify Berry phase effects, see, e.g.,
Refs. 18,19.) If the magnetic flux tube carries half a flux
quantum ("π flux"), the Aharonov-Bohm phase and the
Berry phase collected along a closed trajectory around
the flux tube precisely cancel. We find that with a π flux
the system can reach a state with zero kinematic angular
momentum, that cannot be confined by means of gate
potentials.
The π-flux tube has qualitatively different conse-
quences for disc-shaped and stadium-shaped geometries.
For the disc-shaped geometry, states have a well-defined
kinematic angular momentum. While the states with
zero kinematic angular momentum are no longer con-
fined, states with nonzero kinematic angular momentum
remain confined to the quantum dot. Hence, for the disc-
shaped quantum dot the inclusion of the π-flux tube elim-
inates some of the resonances, but not all. On the other
hand, for the stadium-shaped geometry, all states have
a component in the zero-angular-momentum channel, so
that inclusion of the π-flux tube leads to the suppression
of all resonances.20
The remaining part of the paper is organized as follows:
In Section II we calculate the bound states of a disc-
shaped quantum dot in the presence of a magnetic flux
tube. We find, that the asymptotic behavior of the zero-
angular-momentum state is the same as for a free circular
wave. Hence, no bound state can exist in this channel. In
Section III we present a numerical calculation of the two-
terminal conductance setup of Fig. 1, for a circular and
a stadium-shaped quantum dot. Upon inclusion of the
π-flux tube, we find that sharp resonances persist for the
circular dot, while the conductance becomes featureless
for the stadium dot in the limit R/L → 0. We conclude
in Section IV.
2
II. DISC-SHAPED QUANTUM DOT
The electrostatically-defined graphene quantum dot is
described by the Hamiltonian
H0 = vF(p + eA) · σ + V (r),
(1)
where vF is the Fermi velocity vF and σ = (σx, σy) are
the Pauli matrices. The gate potential V (r) is nonzero
and constant inside the quantum dot, and zero elsewhere,
(cid:40)−vFV0,
V (r) =
0,
r < R
r > R,
(2)
where R is the radius of the disc-shaped dot. The con-
stant V0 has the dimension of inverse length. We choose
V0 > 0, so that the quantum dot is electron doped. The
potential V (r) is smooth on the scale of the lattice con-
stant, justifying our description in terms of a single Dirac
point. The choice of a spatially uniform potential inside
dot makes a closed-form solution of the wavefunctions
possible and allows for a straightforward comparison to
the classical dynamics in the quantum dot, but it is not
essential for the existence of bound states.21,22 The struc-
ture of quasibound states in the inverted setup (zero po-
tential inside, nonzero outside) was considered in Refs.
23,24.
The vector potential corresponding to the magnetic
flux line is
A(r) =
h
e
Φ
2πr
eθ,
(3)
where eθ is the unit vector for the azimuthal angle, and Φ
is the magnetic flux measured in units of the flux quan-
tum h/e.
In polar coordinates, the kinetic part of the
Hamiltonian then reads
vF(p + eA) · σ = −ivF
,
(4)
(cid:19)
(cid:18) 0 D−
(cid:19)
D+ 0
(cid:18)
where we defined the operators
D± = e±iθ
∂r ± i
r
∂θ ∓ Φ
r
.
(5)
With our choice of the vector potential, the Hamil-
tonian is invariant under rotation, hence we can look for
eigenstates of the total angular momentum jz = lz +
2 σz.
They have the form
(cid:18) e−i θ
(cid:19)
ψm(r) = eimθ
2 ϕm,+(r)
2 ϕm,−(r)
ei θ
,
(6)
where m = ±1/2, ±3/2, . . . . Inside the dot, for r < R,
the radial wave functions ϕm,± are determined by the
coupled equations
(cid:0)∂r − (m − 1
(cid:0)∂r + (m + 1
r Φ(cid:1) ϕm,+(r) = iV0ϕm,−(r),
r Φ(cid:1) ϕm,−(r) = iV0ϕm,+(r).
r − 1
r + 1
2 ) 1
2 ) 1
(7)
Outside the dot the equations decouple, and the radial
wave functions show a power law behavior
ϕm,+(r) = a+rm−1/2+Φ, ϕm,−(r) = a−r−m−1/2−Φ,
(8)
with coefficients a±.
A. Without flux tube
We first review the solutions without flux tube, for
Φ = 0.14 With the requirement that the wavefunction is
regular for r → 0, we find for the solution inside the dot
ϕm,+(r) = Jm−1/2(V0r),
ϕm,−(r) = isgn(m)Jm+1/2(V0r),
(9)
where Jn(x) is the Bessel function. Outside the dot, the
wave function must not diverge, which gives the con-
straints a+ = 0 (m > 0) and a− = 0 (m < 0). From
continuity of the wavefunction at r = R, we find the
resonance condition
Jm−1/2(V0R) = 0.
(10)
The wavefunction outside the dot is decaying as ∝
r−(m+1/2).
In Section III we connect the quantum dots and the
surrounding undoped graphene layer to source and drain
contacts. The distance between the contacts is denoted
L and the quantum dot is placed halfway between the
In the limit L (cid:29) R, the bound
contacts, see Fig. 1.
states are then revealed as resonances in the two-terminal
conductance as a function of the gate potential V0. These
resonances have a finite width Γ, which can be estimated
as14 ΓR ∼ ψ(L)2L/ψ(R)2R. We conclude, that the
width of the resonances without flux tube scales as
.
(11)
For m = 1/2 the wavefunction decays proportional to
1/r, which is marginally non-normalizable. Despite the
absence of a bound state in the strict sense, the con-
ductance nevertheless shows a resonance, with a width
ΓR ∝ (R/L).14,16,17
B. With flux tube
We now consider a disc-shaped quantum dot with a
flux tube carrying half a flux quantum (Φ = 1/2) -- a
(cid:18) R
(cid:19)2m
L
ΓR ∝
L
(cid:19)
3
"π flux" -- at its center. The results take a form similar
to those without flux tube if we consider the kinematical
orbital angular momentum,
lz,kin = [r × (p + eA)]z,
(12)
instead of the canonical angular momentum. With the
inclusion of a π-flux, we then find lz,kin = lz +
2 . The
wavefunctions from Eq. (6) are then eigenstates of jz,kin
with eigenvalue µ, where µ = m + 1/2, i.e. the kine-
matical angular momentum takes on integer values. For
µ (cid:54)= 0 the calculation for the bound states proceeds in the
same way as without flux, and we find that the resonance
condition is given by
Jµ−1/2(V0R) = 0.
(13)
Outside the dot, the wavefunction decays proportional
to r−(µ+1/2). We conclude that, if the dot and the sur-
rounding undoped graphene layer are contacted to source
and drain reservoirs, the width Γ of the resonances in the
two-terminal conductance scales as
(cid:18) R
(cid:19)2µ
ΓR ∝
.
(14)
.
+ b2
ψ(r) = b1
iY1/2(V0r)
−iJ1/2(V0r)
(cid:18) e−iθJ1/2(V0r)
The state with zero kinematical angular momentum
(µ = 0) however is special: First of all, inside the dot,
the wavefunction is of the form
(cid:18) e−iθY1/2(V0r)
(cid:19)
simple form J1/2(x) = (cid:112)2/πx sin x, and Y1/2(x) =
−(cid:112)2/πx cos x, we see that ψ(r) diverges as 1/
(15)
Recalling that the half-integer Bessel functions take the
V0r at
the origin, and that there is no non-trivial choice of co-
efficients b1 and b2 which removes this divergence. The
root of this singular behavior lies in the vector potential,
which is singular upon approaching the origin. The prob-
lem can be cured by regularizing the vector potential.
One possibility is to let the flux Φ have an r-dependence,
such that Φ = 0 for r < ρ and Φ = 1/2 for r > ρ, i.e.,
the flux is not located at the origin, but on a circle of
radius ρ. Obviously, the problem is now well-defined at
the origin, and we can take the solution from the case
without flux tube,
√
(cid:18) e−iθJ1(V0r)
−iJ0(V0r)
(cid:19)
ψ(r) = c
,
(16)
where c is a complex constant. We then match the wave-
functions from Eq. (16) and Eq. (15) at r = ρ. Upon
taking ρ → 0, we get b2 = 0 as a condition for Eq. (15).
The boundary condition at the origin ensures, that there
is precisely one solution for zero angular momentum.
The µ = 0 state is also special outside the dot, where
the wavefunction is proportional to 1√
r in both compo-
nents. Thus it has the same decay as a free circular wave
in two dimensions and, hence, it does not allow for the
formation of a bound state. This conclusion is indepen-
dent of the choice of the regularization of the wavefunc-
tion near r = 0.
Summarizing: Without flux tube, the bound states are
labeled by the angular momentum quantum number m,
which takes half-integer values. For m = 1/2 one has
a "quasi-bound state", because the corresponding wave-
function is marginally non-normalizable. With a π flux
tube, the bound states are labeled by the kinematic angu-
lar momentum quantum number µ, which takes integer
values. There is no bound state for µ = 0.
III. TWO-TERMINAL CONDUCTANCE
Following Refs. 14,16,17 we now attach metallic source
and drain contacts to the undoped graphene layer that
surrounds the quantum dot. Schematically, this setup
is shown in Fig. 1. We then calculate the two-terminal
conductance, where bound states of the dot show up as
resonant features as a function of the gate voltage V0.
The contacts are included by the addition of an addi-
tional potential Uleads with25
Uleads =
if −L/2 < x < L/2,
∞ if x < −L/2 or x > L/2.
(cid:26) 0
(17)
(18)
We apply periodic boundary conditions in the y direction,
with period W . For the vector potential A we take a
different gauge than in Sec. II,
(cid:26) 0 if 0 < y < W/2,
1 if −W/2 < y < 0,
A(r) =
δ(x)ex ×
hΦ
e
where ex is the unit vector in the x direction. With this
choice of the vector potential there are two flux tubes:
one, at y = 0, located in the quantum dot, and one, at
y = W/2, located outside the quantum dot. The second
flux tube is necessary to implement the periodic bound-
ary conditions. It does not affect the conductance res-
onances in the limit that the sample width W is much
larger than the distance L between source and drain con-
tacts.
The numerical calculation of the two-terminal conduc-
tance follows the method of Ref. 26. Details specific to
the presence of the flux tube are discussed in the ap-
pendix. We now compare results for quantum dots with
and without flux tube. We give results for a disc-shaped
quantum dot, as a prototype of a quantum dot with in-
tegrable dynamics, and a stadium-shaped quantum dot,
the prototype of a dot with chaotic dynamics.
A. Disc-shaped dot
The two-terminal conductance for the case of a disc-
shaped quantum dot without and with flux tube is shown
in Fig. 2. The figure shows pronounced resonances as a
function of the gate voltage V0, with positions that agree
4
FIG. 2:
(Color online) Two-terminal conductance of a
graphene sheet containing a disc-shaped quantum dot with-
out (top) and with (bottom) π-flux tube. Model parameters
are R/L = 0.2 and W/L = 6. Without flux tube, resonances
have definite angular momentum, with quantum number m
indicated at each resonance [data taken from Ref. 14]. With-
out flux tube, resonances are labeled by the kinematic angular
momentum quantum number µ. No resonance is found for
µ = 0.
with the ones calculated Sec. II. Without flux tube, the
resonances are labeled by the quantum number m =
1/2, 3/2, 5/2, . . . . Their width scales ∝ (R/L)2m as
the coupling to the leads is decreased (data not shown),
consistent with Eq. (11) and Refs. 14,16,17. With flux
tube, the resonances are labeled by the kinematic angular
momentum quantum number µ = 1, 2, 3, . . . . There are
no resonances for µ = 0. Upon decreasing the coupling
to the leads, the resonances become narrower but retain
their height, see Fig. 3, and the scaling of the resonance
width with the ratio R/L is consistent with Eq. (14) (data
not shown) .
B. Stadium-shaped dot
As a prototypical example of a chaotic quantum dot,
we consider a stadium-shaped quantum dot. Here the
potential V (r) = −vFV0 for positions r inside the sta-
dium and V (r) = 0 otherwise. Without magnetic flux,
the two-terminal conductance shows resonances, which,
in the limit of small R/L, all behave as the m = 1/2-
type resonances of the disc-shaped dot, i.e., their height
remains finite, whereas the resonance width scales pro-
5
FIG. 4:
(Color online) Two-terminal conductance of a
graphene sheet containing a stadium-shaped quantum dot
without (top) and with (bottom) a π-flux. Parameters for
the calculation are R/L = 0.2, W/L = 12, a/R =
3/2,
d = 2a/3. Without flux tube, the calculation for the conduc-
tance was done with the method of Ref. 17.
√
IV. CONCLUSION
In this article we investigated the observation of Refs.
14,16,17, that the two-terminal conductance of a generic
gate-defined graphene quantum dot shows resonances in
the limit of a weak coupling to the leads, in spite of the
naive expectation that electrons can not be confined in
such a quantum dot because of Klein tunneling. We at-
tribute this observation to the Berry phase in graphene,
which quantizes angular momenta to half-integer values.
With half-integer angular momenta, strict perpendicular
incidence -- the condition for Klein tunneling with unit
probability -- does not occur. As a consequence, con-
ductance resonances exist in both integrable and chaotic
geometries. The only difference between the two cases is
a quantitative one:
it concerns the scaling of the reso-
nance widths with the coupling to the leads.17
can be
The Berry phase
cancelled against an
Aharonov-Bohm phase, when a flux tube containing half
a flux quantum is introduced to the system. With a
magnetic flux tube, we showed that the relevant angu-
lar momentum, the kinematical angular momentum, is
quantized to integer values.
In this case a state with
zero angular momentum is possible. Such a state can
not form a bound state or give rise to a conductance res-
onance. We showed this by an explicit calculation for the
FIG. 3: (Color online) First two resonances for a disc-shaped
quantum dot with π-flux tube, for different coupling strengths
to the leads. Calculations are performed for W/L = 8 and
various R/L, as indicated in the figure. The second resonance
is shown enlarged in the inset.
portional to R/L.17 The numerical data shown in the
top panels of Figs. 4 and 5 clearly reveal these reso-
nances, although the asymptotic scaling of the resonance
width and resonance height with R/L is somewhat ob-
scured by transient contributions for moderate R/L that
originate from higher-angular-momentum contributions
to the resonances.17
The conductance trace for a stadium-shaped quantum
dot with a flux tube carrying half a flux quantum is shown
in the bottom panels of Figs. 4 and 5. In order to break
inversion symmetry, the stadium is placed asymmetri-
cally with respect to the flux tube, see the inset of Fig. 4.
The differences with the case of the disc-shaped quantum
dot and with the case without a flux tube are significant.
We find that the conductance depends on the gate volt-
age V0 for finite R/L, but the widths of the "resonances"
is independent of the coupling to the leads, which is set
by the ratio R/L, whereas the height decreases upon de-
creasing R/L. This agrees with the expectation that,
since all states in the stadium have a µ = 0 compo-
nent, a stadium dot should not support any (quasi)bound
states. While for intermediate values of R/L contribu-
tions from higher angular momentum channels still give
rise to broad "quasi-resonances", in the limit R/L → 0,
only the µ = 0 channel is relevant, and the conductance
becomes featureless as a function of V0.
We remark that, if the flux tube would be placed ex-
actly in the middle of the stadium, inversion symme-
try would split the resonances into two groups, result-
ing from even and odd µ. The "even" resonances have
a finite µ = 0 component and disappear upon taking
the limit R/L → 0. The "odd" resonances survive in
this limit, with a finite resonance height and a resonance
width Γ ∝ (R/L)2 (data not shown).
Acknowledgments
6
We gratefully acknowledge discussions with Jens Bar-
darson, Igor Gornyi, Pavel Ostrovsky, Brian Tarasin-
ski, and Silvia Viola Kusminskiy. This work is sup-
ported by the Alexander von Humboldt Foundation in
the framework of the Alexander von Humboldt Profes-
sorship, endowed by the Federal Ministry of Education
and Research and by the German Research Foundation
(DFG) in the framework of the Priority Program 1459
"Graphene".
Appendix A: Numerical approach
V (r) is replaced by a potential(cid:80)
The numerical approach follows Ref. 26. The potential
n Vn(y)δ(x − xn) that
is nonzero at N discrete values −L/2 = x0 < x1 < x2 <
. . . < xN−1 < xN = L/2 of the x coordinate, with
Vn(y) =
dxV (x, y), n = 1, 2, . . . , N − 1.
(cid:90) (xn+xn+1)/2
(xn−1+xn)/2
Between the discrete points the wavefunction is solved
from the free Dirac equation. This solution takes its sim-
plest form after Fourier transform with respect to the
transverse coordinate y, because the free Dirac equa-
tion does not couple different transverse modes. These
solutions are then matched by applying the appropri-
ate boundary conditions at the discrete points x = xj,
j = 1, 2, . . . , N . A numerically stable method to imple-
ment this program is to express both the solution of the
free Dirac equation and the matching conditions at the
discrete points x = xj in terms of scattering matrices.
The scattering matrix of the entire sample is then ob-
tained from convolution of the scattering matrices of the
2N − 1 individual components. The result of the calcula-
tion is the transmission matrix t, which is related to the
two-terminal conductance via the Landauer formula,
G =
tr tt†,
4e2
h
(A1)
where the trace is taken of the transverse Fourier modes.
The number of "slices" N and the number of transverse
modes M must be chosen large enough, that the conduc-
tance G no longer depends on N and M .
The vector potential (18) corresponds to the boundary
condition
ψ(x, y) = − lim
x↓0
lim
x↑0
ψ(x, y) for −W/2 < y < 0,
(A2)
whereas ψ(x, y) is continuous at x = 0 for 0 < y <
W/2.
In the approach described above, this boundary
condition is expressed in terms of a scattering matrix
relating incoming and outgoing waves at x ↑ 0 and x ↓ 0.
This scattering matrix has no reflective part, whereas the
transmission matrix is
tmn =
−4i/[(km − kn)W ]
if m − n even,
if m − n odd,
(A3)
(cid:26) 0
FIG. 5: (Color online) Behavior of the first three quasi reso-
nances of the stadium-shaped quantum dot without (top) and
with (bottom) π-flux upon changing the coupling to the leads
R/L. The other parameters are the same as in Fig. 4.
disc-shaped quantum dot in Sec. II, and using numerical
calculations for disc-shaped and stadium-shaped quan-
tum dots in Sec.
III. Once the Aharonov-Bohm phase
from the π-flux tube cancels the Berry phase, the re-
sults of the full quantum theory are consistent with the
simple classical expectations. With a π flux, there is
a stark qualitative difference between conductance res-
onance for integrable and non-integrable quantum dots:
Whereas sharp conductance resonances for the case of
an integrable quantum dot continue to exist, in the limit
of weak lead-dot coupling the conductance becomes fea-
tureless for a generic non-integrable quantum dot.
In closing, we make two remarks concerning the possi-
ble realization of the scenario we investigated here. First,
a flux tube for graphene not necessarily has to be created
by a real magnetic field, but it can also be engineered
via strain as a pseudo-magnetic field.27,28 The pseudo-
magnetic field would have opposite signs for the two val-
leys, which is of no consequence for our conclusions, be-
cause the two valleys are decoupled for the smooth con-
fining potentials we consider here. Second, the appli-
cation of a well-defined Aharonov-Bohm phase is more
controlled in ring-shaped structures.18,19 In this case, we
expect that the our main finding, the strong qualitative
difference between integrable and non-integrable geome-
tries in the case of a π flux, persists.
where the integers m and n label the transverse modes
and kn = 2πn/W . This transmission matrix has the
special properties that t = t† and t2 = 1.
In order to ensure numerical stability, unitarity must
be preserved while restricting to a finite number of trans-
verse modes M . For the transmission matrix (A3) this
can be achieved using the following trick: One first
builds the hermitian matrix h = i(eiφ − t)/(t + eiφ) =
cot φ− t/ sin φ out of the transmission matrix, where φ is
a phase that can be chosen arbitrarily, then truncates
h, which can be done straightforwardly without com-
promising hermiticity, and then uses the inverse relation
t = eiφ(1 + ih)/(1 − ih) to obtain a finite-dimensional
transmission matrix. In our numerical calculation we set
φ = π/2. We verified that the elements of the resulting
finite-dimensional transmission matrix approach the ele-
ments of the exact transmission matrix (A3) in the limit
that the number of transverse mode M → ∞.
7
1 A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S.
Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109
(2009).
2 C. W. J. Beenakker, Rev. Mod. Phys. 80, 1337 (2008).
3 A. K. Geim, Science 324, 1530 (2009).
4 S. Das Sarma, S. Adam, E. H. Hwang, and E. Rossi, Rev.
Mod. Phys. 83, 407 (2011).
5 L. A. Ponomarenko, F. Schedin, M. I. Katsnelson, R. Yang,
E. W. Hill, K. S. Novoselov, and A. K. Geim, Science 320,
356 (2008).
6 C. Stampfer, E. Schurtenberger, F. Molitor, J. Guttinger,
T. Ihn, and K. Ensslin, Nano Lett. 8, 2378 (2008).
7 A. Jacobsen, P. Simonet, K. Ensslin, and T. Ihn, New J.
Phys. 14, 023052 (2012).
8 S. K. Hamalainen, Z. Sun, M. P. Boneschanscher, A. Up-
pstu, M. Ijas, A. Harju, D. Vanmaekelbergh, and P. Lil-
jeroth, Phys. Rev. Lett. 107, 236803 (2011).
9 O. Klein, Z. Phys. 53, 157 (1929).
10 M. Katsnelson, K. Novoselov, and A. Geim, Nat. Phys. 2,
620 (2006).
17 M. Schneider and P. W. Brouwer, Phys. Rev. B 84, 115440
(2011).
18 J.-B. Yau, E. P. De Poortere, and M. Shayegan, Phys. Rev.
Lett. 88, 146801 (2002).
19 F. Qu, F. Yang, J. Chen, J. Shen, Y. Ding, J. Lu, Y. Song,
H. Yang, G. Liu, J. Fan, et al., Phys. Rev. Lett. 107,
016802 (2011).
20 A similar situation occurs, if one tries to confine electrons
on a rectangular strip. Here, perpendicular incidence is
only possible for zero transverse momentum. Whether such
a state exists strongly depends on the boundary conditions,
see P. G. Silvestrov and K. B. Efetov, Phys. Rev. Lett. 98,
016802 (2007).
21 C. A. Downing, D. A. Stone, and M. E. Portnoi, Phys.
Rev. B 84, 155437 (2011).
22 V. V. Mkhitaryan and E. G. Mishchenko, Phys. Rev. B
86, 115442 (2012).
23 A. Matulis and F. M. Peeters, Phys. Rev. B 77, 115423
(2008).
24 P. Hewageegana and V. Apalkov, Phys. Rev. B 77, 245426
11 V. V. Cheianov and V. I. Fal'ko, Phys. Rev. B 74, 041403
(2008).
(2006).
12 A. De Martino, L. Dell'Anna, and R. Egger, Phys. Rev.
Lett. 98, 066802 (2007).
13 G. Pal, W. Apel, and L. Schweitzer, Phys. Rev. B 84,
075446 (2011).
25 J. Tworzydlo, B. Trauzettel, M. Titov, A. Rycerz, and
C. W. J. Beenakker, Phys. Rev. Lett. 96, 246802 (2006).
26 J. H. Bardarson, J. Tworzyd(cid:32)lo, P. W. Brouwer, and
C. W. J. Beenakker, Phys. Rev. Lett. 99, 106801 (2007).
27 M. M. Fogler, F. Guinea, and M. I. Katsnelson, Phys. Rev.
14 J. H. Bardarson, M. Titov, and P. W. Brouwer, Phys. Rev.
Lett. 101, 226804 (2008).
Lett. 102, 226803 (2009).
15 M. Calvo, Phys. Rev. B 84, 235413 (2011).
16 M. Titov, P. M. Ostrovsky, I. V. Gornyi, A. Schuessler,
and A. D. Mirlin, Phys. Rev. Lett. 104, 076802 (2010).
28 N. Levy, S. A. Burke, K. L. Meaker, M. Panlasigui,
A. Zettl, F. Guinea, A. H. C. Neto, and M. F. Crommie,
Science 329, 544 (2010).
|
1604.03931 | 1 | 1604 | 2016-04-13T19:59:47 | Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$ | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"cond-mat.str-el"
] | We report quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$. The band structure shows several narrow bands with nearly linear energy dispersion and Dirac-cone-like points at the Fermi level. The quantum oscillation experiments revealed one quasi-two-dimensional Fermi pocket and another complex pocket with small cyclotron resonant mass. The in-plane transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field unsaturated linear magnetoresistance which is attributed to the quantum limit of the Dirac fermions. Our results suggest the existence of quasi 2D Dirac fermions in rare-earth based layered compounds with two-dimensional double-sized Bi square nets, similar to (Ca,Sr)MnBi$_{2}$, irrespective of magnetic order. | cond-mat.mes-hall | cond-mat |
Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi2
Kefeng Wang,1 D. Graf,2 and C. Petrovic1
1Condensed Matter Physics and Materials Science Department,
Brookhaven National Laboratory, Upton, New York 11973, USA
2National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306-4005, USA
(Dated: November 8, 2018)
We report quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi2.
The band structure shows several narrow bands with nearly linear energy dispersion and Dirac-
cone-like points at the Fermi level. The quantum oscillation experiments revealed one quasi-two-
dimensional Fermi pocket and another complex pocket with small cyclotron resonant mass. The
in-plane transverse magnetoresistance exhibits a crossover at a critical field B ∗ from semiclassical
weak-field B 2 dependence to the high-field unsaturated linear magnetoresistance which is attributed
to the quantum limit of the Dirac fermions. Our results suggest the existence of quasi 2D Dirac
fermions in rare-earth based layered compounds with two-dimensional double-sized Bi square nets,
similar to (Ca,Sr)MnBi2, irrespective of magnetic order.
PACS numbers: 72.20.My,72.80.-r,75.47.Np
I.
INTRODUCTION
Dirac fermions with linear energy-momentum disper-
sion and corresponding Dirac cone states have been ob-
served in two-dimensional graphene1,2 and the surface
of topological insulators (TI).3,4 It is believed that the
two bands with the opposite (pseudo)spins cross each
other without hybridization giving the linear energy
dispersion. Unlike the conventional electron gas with
parabolic energy dispersion where Landau levels (LLs)
are equidistant,5 the distance between the lowest and 1st
LLs of Dirac fermions in magnetic field is very large. So
the quantum limit where all of the carriers occupy only
the lowest LL is easily realized even in moderate fields.6
Consequently some quantum transport phenomena such
as quantum Hall effect and large linear magnetoresistance
(MR) could be observed in the regular magnetic field in
Dirac fermion system.6 -- 10 Thus, Dirac materials are now
one of the central topics of condensed matter physics.
In addition to nanoengineered or surface materi-
als such as graphene and TIs,
the Dirac fermions
and Dirac nodes were observed or predicted in bulk
crystals of
iron-based superconductor parent mate-
rial BaFe2As2,9 -- 12 (Sr/Ca)MnBi2 bismuth based lay-
ered magnetic compounds13 -- 16 and in a molecular or-
ganic conductor α−(BEDT-TTF)2I3.17 Among them,
SrMnBi2 contains alternatively stacked two MnBi4 tetra-
hedron layers and a two-dimensional (2D) Bi square net
separated by Ca atoms along the c-axis. The linear
energy dispersion originates from the crossing of two
Bi 6px,y bands in the double-sized Bi square nets cor-
responding to the double-sized N´eel-type antiferromag-
netic (AFM) Mn unit cell.13 However, in a SrMnBi2-type
structure, the nonmangetic unit cell still contains two Bi
atoms in the Bi square net due to the occupation of Sr
atoms.18 In previous report,13 all the analysis is based
on the electronic structure of SrMnBi2 in antiferromag-
netic state. Hence, the effect of AFM order within MnBi4
layers in the formation of Dirac nodes and whether any
unit cell symmetry with double-sized Bi unit cell can host
Dirac fermions is not completely clear. Besides, the engi-
neering of Dirac states is of the great interest. With the
change of band parameters in deformed graphene, Dirac
points may merge or be completely removed.19 Similarly
in bulk crystals, hopping terms and the band parame-
ters can be tuned by changing the lattice parameters,
hybridization or the space group of the crystallized struc-
ture. It was reported that SrMnBi2 and CaMnBi2 host
Dirac dispersion of different nature. Even though the
conduction and valence bands touch at the Dirac point
in both materials, the details are different due to the dif-
ferent stacking of nearby alkaline earth atoms and the dif-
ferent hybridization. For SrMnBi2, the zero-energy gap is
found only at a specific point, while it is found along the
continuous line in the momentum space for CaMnBi2.20
Hence exploring new bulk compounds with similar struc-
ture to SrMnBi2 may provide more profound comprehen-
sion of Dirac band crossing mechanisms in bulk crystal.
Here we report quasi-2D Dirac fermions
in the
LaAgBi2 single crystal which has similar crystal lattice
structure with CaMnBi2, but without magnetic ions.21
The band structure shows several narrow bands with
nearly linear energy dispersion and Dirac-cone-like points
at the Fermi level. The quantum oscillation experiments
show one quasi-two-dimensional Fermi pocket and an-
other very complex electron pocket with small cyclotron
resonant mass. The in-plane transverse magnetoresis-
tance exhibits a crossover at a critical field B∗ from semi-
classical weak-field B2 dependence to the high-field un-
saturated linear magnetoresistance due to the quantum
limit of the Dirac fermions. The temperature dependence
of B∗ satisfies quadratic behavior, which is attributed
to the splitting of linear energy dispersion in high field.
Our results demonstrate that Dirac fermions in bulk crys-
tals can also be found in the absence of magnetic order
and imply possible universal existence of two dimensional
Dirac fermions in layered structure compounds with two-
dimensional double-sized Bi square nets.
II. EXPERIMENTAL
Single crystals of LaAgBi2 were grown using a high-
temperature self-flux method.21 The resultant crystals
are plate-like. X-ray diffraction (XRD) data were taken
with Cu Kα (λ = 0.15418 nm) radiation of Rigaku Mini-
flex powder diffractometer. Electrical transport measure-
ments up to 9 T were conducted in Quantum Design
PPMS-9 with conventional four-wire method. In the in-
plane measurements, the crystal was mounted on a ro-
tating stage such that the tilt angle θ between sample
surface (ab-plane) and the magnetic field can be continu-
ously changed, with currents flowing in the ab-plane per-
pendicular to magnetic field. The de Haas-van Alphen
(dHvA) oscillation experiments were performed at Na-
tional High Magnetic Field Laboratory, Tallahassee. The
crystals were mounted onto miniature Seiko piezoresistive
cantilevers which were installed on a rotating platform.
The field direction can be changed continuously between
parallel and perpendicular to the c-axis of the crystal.
First principle electronic structure calculation were per-
formed using experimental lattice parameters within the
full-potential linearized augmented plane wave (LAPW)
method 22 implemented in WIEN2k package.23 The gen-
eral gradient approximation (GGA) of Perdew et al., was
used for exchange-correlation potential.24 The LAPW
sphere radius were set to 2.5 Bohr for all atoms, and
the converged basis corresponding to Rminkmax = 7 with
additional local orbital were used where Rmin is the min-
imum LAPW sphere radius and kmax is the plane wave
cutoff. Spin-orbit coupling for all elements were took into
account by a second-variational method with the scalar-
relativistic orbitals as basis which was implemented in
WIEN2k.
III. RESULTS AND DISCUSSIONS
Fig.
1(a) shows the powder XRD pattern of flux
grown LaAgBi2 crystals, which were fitted by RIET-
ICA software.25 All reflections can be indexed in the
P4/nmm space group. The determined lattice param-
eters are a = b = 0.4582(8) nm and c = 1.062(4) nm, in
agreement with the published data.21,26 The basal plane
of a cleaved crystal is the crystallographic ab-plane where
the 2D Bi layers (Bi2, the red balls in Fig. 1(b)) are lo-
cated. Contrary to CaMnBi2, the adjacent 2D Bi layers
along c-axis are separated by La atoms and AgBi layers
without magnetic ions (Fig. 1(b)). This makes LaAgBi2
an ideal system to clarify the role of magnetic ions in
the formation of Dirac fermions in CaMnBi2 and other
similar compounds.
Fig. 1(c) shows the first-principle band structure with-
out spin-orbit coupling. Fig 1(d), Fig. 2(a) and Fig.
2(b-d) show the band structure and the density of states
(DOS), and Fermi surfaces of LaAgBi2 with spin-orbit
coupling, respectively. The band structure in Fig. 1
clearly shows several narrow linear bands. More inter-
2
esting, probably at the Fermi level, there are two Dirac-
cone-like points along Γ − M , R − Z directions and at
X points in the Brillouin zone (red circles in Fig. 1(d)).
Compared to the band structure without spin-orbit in-
teraction in Fig. 1(c), the spin-orbit coupling induces
the gap at the Dirac-cone-like points and a lowering of
the Fermi level around 20 meV in Fig. 1(d). Besides
these, the band structure with and without spin-orbit
coupling looks similar and the essential features of the
FS's remain almost the same In Fig. 2(a), the Fermi
level is located at the edge of the gap, and the main
peaks of DOS from La, Ag and Bi1 are located far below
the Fermi level. The conducting electrons in LaAgBi2
are mainly due to 5p from Bi2, while there is little con-
tribution from other atoms as shown in Fig. 2(a). So the
linear bands and the Dirac-cone like points at the Fermi
level mainly originate from Bi bands. In (Sr/Ca)MnBi2,
the antiferromagnetic order of Mn moments doubles the
unit cell. Consequently two Bi 6px,y bands in the double-
sized Bi square nets cross each other without significant
hybridization and form the linear bands and Dirac-cone
like points.13,14 There are no magnetic ions in LaAgBi2,
but there are still two Bi2 atoms per unit cell because of
the occupation of La ions (one above and another below
the Bi2 layer), as shown in Fig. 1(b). This will lead to the
folding of the dispersive p orbital of Bi2. The two px,y
bands from two Bi2 atoms cross each other at a single
point and then form the nearly linear band and Dirac-
cone-like point around the Fermi level (Fig. 1(c)). Cor-
respondingly the Fermi pockets along Γ-M (Fig. 2(d)),
and the one along R− Z directions and at X points (Fig.
2(b)) host Dirac fermions.
It is important to compare the similarity/difference
dispersion between LaAgBi2
and
of
the Dirac
(Sr/Ca)MnBi2.
In (Sr/Ca)MnBi2, conduction and
valence bands touch at the Dirac point in both mate-
rials, but the details are different due to the different
stacking of nearby alkaline earth atoms and the different
hybridization. For SrMnBi2, the zero-energy gap is
found only at a specific point, while it is found along the
continuous line in the momentum space for CaMnBi2.20
Since the crystal structure of LaAgBi2 is identical to
CaMnBi2,
there is also continuous zero-energy gap
line in LaAgBi2 which is different from SrMnBi2. But
due to the different valence and hybridization between
La and Ca ions as well as the nomagnetic Ag ions,
some difference is expected in Fermi surfaces and Dirac
dispersions. In CaMnBi2, the Dirac pocket (electrons) is
only observed along Γ-X line,20 but in LaAgBi2 there are
Dirac electron pockets along Γ-X and Γ− M lines (Fig. 1
and Fig. 2). In addition, the magnetic order of Mn ions
is important to expel the states from the Fermi level,
in contrast several regular parabolic bands cross the
Fermi level in LaAgBi2 (Fig. 1(c)). These observations
indicate that the magnetic order in (Sr/Ca)MnBi2 is
not the key ingredient in the Dirac cone formation
mechanism in 2D Bi layers and points out a direction
for the search of new Dirac materials. Nevertheless, the
10
8
6
4
2
3
10
8
6
4
2
0
0
2
4
6
8
10
0
0
2
4
6
8
10
FIG. 1. (color online) (a) Powder XRD patterns and struc-
tural refinement results. The data were shown by (+) , and
the fit is given by the heavy solid line. The difference curve
(the light solid line) is offset and the segments indicate the
observed peaks. (b) The crystal structure of LaAgBi2. Atoms
are distinguished by their size starting from La (largest) to Ag
(smallest). Bi atoms in 2D square nets (Bi2) are somewhat
smaller than Bi atoms in AgSb4 tetrahedra (Bi1). (c) and
(d) The band structure for LaAgBi2 with (c) and without (d)
spin-orbit coupling effect. The different bands were indicated
by different color. The line at Energy=0 indicates the posi-
tion of Fermi level. The red circles denote the position of the
Dirac-cone-like points close to the Fermi level.
magnetic order or electronic correlation can still remove
other parabolic bands from the Fermi level.
Linear bands and Dirac fermions have considerable ef-
fects on the transport properties of materials. The in-
plane resistivity ρab of LaAgBi2 single crystal is metal-
lic in the whole temperature range with a significant
anomaly at ∼ 30 K (Fig 3(a)). Similar behavior was
observed in LaAgSb2 which was attributed to the possi-
ble charge density wave (CDW) order and possibly im-
plies the same order/transition in LaAgBi2. The exter-
nal magnetic field significantly enhances the resistivity
below 30 K, but has little influence on the transport be-
havior above 30 K (Fig. 3(a)). The magnetoresistance of
LaAgBi2 shows significant dependence on the field direc-
tion (Fig 3(b,c)). The crystal was mounted on a rotating
FIG. 2. (color online) (a) The total density of states (black
line) and local DOS from La (dot line) (upper panel), Ag (the
second panel),Bi1 (the third panel) and Bi2 (bottom panel) in
LaAgBi2. The dotted line indicates the position of the Fermi
energy. (b,c,d) The shape of three different Fermi pockets of
LaAgBi2.
stage such that the tilt angle θ between the crystal surface
(ab-plane) and the magnetic field can be continuously
changed with currents flowing in the ab-plane perpendic-
ular to magnetic field, as shown in the inset of Fig. 3(c).
Angular dependent magnetoresistance ρ(B, θ) at T ∼ 2
K is shown in Fig. 3(b) and (c). When B is parallel to
the c-axis (θ = 0o, 180o), the MR is maximized and is
linear in field for high fields. With increase in the tilt
angle θ, the MR gradually decreases and becomes nearly
negligible for B in the ab-plane (θ = 90o), as shown in
Fig. 3(b). Angular dependent resistivity in B = 9 T and
T = 2 K shows wide maximum when the field is par-
allel to the c-axis (θ = 0o, 180o), and sharper minimum
around θ = 90o, 270o (Fig. 3(c)). Hence, the Fermi sur-
face of LaAgBi2 is highly anisotropic along ab-plane and
c-axis.
LaAgBi2 exhibits very large linear magnetoresistance.
At 2 K, the MR is linear in the high field region and
reaches ∼ 1200% in 9 T field (Fig. 4 (a)). This linear
behavior extends to a very low crossover fields B∗ where
the MR naturally reduces to a weak-field semiclassical
quadratic response. In order to extrapolate the crossover
field B∗, we plot the field derivative of MR, dMR/dB, in
4
1.2
0.9
0.6
R
M
0.3
0.0
0.04
B
d
/
R
M
d
0.03
(a)
12
10
8
R
6
M
4
2
0
1.2
(c)
0.8
B
d
/
R
M
d
0.4
2 K
10 K
20 K
30 K
(b)
40 K
60 K
80 K
100 K
(d)
B*
B*
10 K
30 K
9
0
10
8
6
4
2
0
0
2
4
6
8
10
(color online) (a) In-plane resistivity ρab(T ) of
FIG. 3.
LaAgBi2 single crystal in 0 T and 9 T magnetic field. (b)
In-plane Resistivity ρ vs. magnetic field B of LaAgBi2 crystal
with different tilt angle θ between magnetic field and sample
surface (ab-plane) at 2 K. (c) In-plane resistivity ρ vs. the tilt
angle θ from 0o to 360o at B = 9 T and T = 2 K. Inset shows
the configuration of the measurement.
Fig. 4(b) and (c). In the low field range (B <1 T at 2 K),
dMR/dB is proportional to B (as shown by lines in low-
field regions), indicating the semiclassical MR ∼ A2B2.
But above a characteristic field B∗, dMR/dB deviates
from the semiclassical behavior and saturates to a much
reduced slope (as shown by lines in the high-field region).
This indicates that the MR for B > B∗ is dominated by a
linear field dependence plus a very small quadratic term
(MR= A1B + O(B2)). With increasing temperature, the
field range where linear MR appears shrinks and MR
decreases. Ultimately we cannot observe any linear MR
below 9 T and above 100 K. The cross-over field B∗ is
defined as the value where the fitting lines cross each
other. Below 9 T and 50 K, the evolution of B∗ with
temperature is parabolic (Fig. 5(a)).
The linear MR which evidently deviates from semi-
classical transport behavior in metal has been ob-
served in bulk crystals of Ag2−δ(Te/Se),27,28 Bi2Te3,7,8,10
and (Sr/Ca)MnBi2.13 -- 16 Among them,
BaFe2As2
Ag2−δ(Te/Se) and Bi2Te3 were found to be topologi-
cal insulators hosting topological protected Dirac sur-
face states,3,4,29 while BaFe2As2 and (Sr/Ca)MnBi2 host
9
0.0
0
3
6
B (T)
0.02
0.01
60 K
100 K
9
6
3
B (T)
FIG. 4.
(color online) (a) and (b) The magnetic field (B)
dependence of the in-plane magnetoresistance MR at different
temperatures. (c) and (d) The field derivative of in-plane MR,
dMR/dB, as a function of field (B) at different temperature
respectively. The solid lines in high field regions were fitting
results using MR = A1B + O(B 2) and the lines in low field
regions using MR = A2B 2.
linear bands in the bulk.9,11 -- 13 The energy splitting be-
tween the lowest and 1st LLs of Dirac fermions can be
described by △LL = ±vF√2e¯hB where vF is the Fermi
velocity.7,8,30,31 In the quantum limit △LL is larger than
both the Fermi energy EF and the thermal fluctuations
kBT . All carriers occupy the lowest Landau level and
therefore the quantum transport with linear magnetore-
sistance dominates the conduction. The critical field
B∗ above which the quantum limit is satisfied at spe-
cific temperature T is B∗ = 1
(EF + kBT )2.9 The
B∗(T ) in LaAgBi2 can be well fitted by the above equa-
tion, as shown by the solid line in Fig. 5(a). This con-
firms the existence of Dirac fermion states in LaAgBi2.
In a multiband system with dominant Dirac states and
conventional parabolic-band carriers (including electrons
and holes), the coefficient of the low-field semiclassi-
cal B2 quadratic term, A2,
is related to the effective
2e¯hv2
F
Data
Fitting
(a)
8
6
)
T
(
*
B
4
1.5
1.0
0.5
)
s
V
/
2
m
c
(
2
R
M
0.0
0
0 20 40 60 80
T (K)
-0.5
(b)
0.9
1
0.6
A
0.3
0.0
0 20 40 60 80
T (K)
FIG. 5. (color online) (a)Temperature dependence of the crit-
ical field B ∗ (black squares) The solid line is the fitting results
(EF + kBT )2. (b) The effective MR
of B ∗ using B ∗ = 1
2e¯hv2
F
mobility µM R (black squares) extracted from the weak-field
MR and the fitting coefficient A1 for the linear term in MR.
√σeσh
σe+σh
MR mobility √A2 =
(µe + µh) = µM R (where
σe, σh, µe, µh are the effective electron and hole conduc-
tivity and mobility in zero field respectively). The ef-
fective MR is smaller than the average mobility of car-
riers µave = µe+µh
and gives an estimate of the lower
bound.9,10 Fig. 5(b) shows the dependence of µM R on
the temperature. At 2 K, the value of µM R is about
1200 cm2/Vs in LaAgBi2 which is larger than the values
in conventional metals. With increasing temperature, the
linear MR, the linear term coefficient A1 and µM R are
suppressed due to the temperature smearing of the Lan-
dau level splitting.
2
In order to further clarify the electronic structure and
Dirac fermions in LaAgBi2, we performed first principle
Fermi surface calculations and dHvA oscillation measure-
ment on LaAgBi2 single crystal. Fig. 2(b-d) shows the
topology of the theoretical Fermi surfaces of three dif-
ferent pockets for LaAgBi2, respectively. Centered at
X point, there are very small ellipsoid electronic pock-
ets with the long axis along Γ − Z directions, corre-
sponding to the Dirac-cone-like point at X point in band
structure.This Fermi pocket predicts the presence of a
dHvA oscillation frequency of about 82 T. At the cen-
ter of the Brillouin zone, there is a big hollow cylindrical
hole pocket.This hole pockets is nearly ten times larger
than previous ellipsoid pocket and predicts a frequency
of ∼ 1000 T. These two pockets are nearly isotropic in
ab-plane but different along c-axis.
In addition, there
is another complex electron pocket along diagonal direc-
tion. This pocket is highly anisotropic along three axis,
corresponding to the anisotropic point in Γ − M direc-
tion in band structure. This complex pocket will give two
5
20
B (T)
30
(a)
0
(b)
0o
12o
22o
32o
42o
53o
63o
74o
84o
90o
10
2
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
)
V
m
(
e
s
n
o
p
s
e
r
r
e
v
e
l
i
t
n
a
C
)
s
t
i
n
u
.
b
r
a
(
e
d
u
t
i
l
p
m
A
T
F
F
50 100 150 200 250 300 350 400 450
Frequency (T)
FIG. 6. (color online) (a) Quantum oscillation of LaAgBi2
observed with cantilever as a function of the magnetic field
(B) with different tilting angle. (b) The Fourier transform
spectrum of the SdH oscillation. For the peak labels see the
main text.
similar frequencies of 370 T and 320 T. It is of interest to
note that the theoretical hole and electron Fermi surfaces
are compensated, similar to semimetals.
The quantum oscillation provide a direct probe of the
Fermi surface.
In metals, quantum oscillations corre-
spond to successive emptying of LLs by the magnetic
field and the oscillation frequency is related to the cross
section area of the Fermi surface SF by the Onsager re-
lation F = (¯h/2πe)SF .7,8,32 From the temperature evo-
lution of the oscillation amplitude, one can deduce the
effective cyclotron resonant mass by the fitting using
Lifshitz-Kosevitch formula.32 From the evolution of these
frequencies as a function of the magnetic field orienta-
tion (θ) and temperature, one can construct a detailed
picture of the size and shape of the Fermi surface. Fig.
6(a) and (b) show the typical dHvA oscillations and the
Fourier transform (FFT) spectrum of the oscillations for
LaAgBi2 single crystal with different magnetic field direc-
tion. When the magnetic field is close to perpendicular
to the ab plane (θ close to 0o), the signal exhibits signif-
icant oscillation (Fig. 6(a)). The FFT spectrum of the
(a)
-10
0
10
20
40
(Degree)
30
50
60
70
(b)
F ~ 67 T
F ~ 292 T
F ~ 323 T
)
T
(
)
(
s
o
c
*
F
350
300
250
200
150
100
50
)
s
t
i
n
u
.
b
r
a
(
e
d
u
t
i
l
p
m
A
T
F
F
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
10 20 30 40 50 60 70 80 90
T (K)
FIG. 7. (color online) (a) The evolution of the de Hass-van
Alphen oscillation frequencies F plotted as F ∗cos(θ) with the
magnetic field angle θ. (b) Temperature dependence of the
oscillation amplitudes (Osc. Amp.) in quantum oscillation
using cantilevert. The discrete symbols are the experimen-
tal results and the solid lines are the fitting results giving
cyclotron mass.
oscillations (Fig. 6(b)) exhibit two peaks at ∼ 67 and
300 T which are labeled as α and β. There is another
peak at 135 T which corresponds to the double frequency
of peak α. With increasing θ, oscillations are weaker and
the peak α shifts to higher frequency. More interestingly,
the peak β splits to two peaks (labeled as β and η). One
of them (β) shifts to lower frequency but another (η)
shifts toward higher frequency with increasing angle.
The detailed angular dependence of the three FFT fre-
quencies in the oscillation are shown in Fig. 7(a). For
a 2D FS (a cylinder), the cross section has SF (θ) =
S0/ cos(θ) angular dependence and the oscillation fre-
quencies should be inversely proportional to cos(θ). For
a sphere Fermi pocket, the cross section for all magnetic
field direction is a constant and the oscillation frequen-
cies should not be angular dependent.7,32 In Fig. 7(a),
the angular dependence of the oscillation frequency α
(∼ 67 T at θ = 0) multiplied by cos θ (open squares)
does not show significant dependence on the field angle
θ, indicating a quasi-2D Fermi pocket. The tempera-
ture evolution of the oscillation amplitude gives a cy-
clotron mass m ∼ 0.056me where me is the bare electron
6
mass (Fig. 7(b)) and similar to previous observation.21
The oscillation frequency and mass is close to the el-
lipsoid electron pocket at X point. Other two pock-
ets β and η should not come from the hollow cylin-
der hole pocket at the center of the Brillouin zone, be-
cause the hole pocket is nearly one hundred times big-
ger than the ellipsoid electron pocket but the oscilla-
tion frequencies for β and η is only ten times bigger the
α. Moreover, these two pockets show similar effective
mass (mβ ∼ 0.14(2)me, mη ∼ 0.16(5)me) (Fig. 7(b)).
These two oscillation frequencies should correspond to
the highly anisotropic pockets locating along the edge
and diagonal directions in Brillouin zone (Fig.
2(d))
since the oscillation frequencies were close to the the-
oretical values. but in our in-plane measurement, the
magnetic field is along [100] direction. Since we cannot
change the in-plane field direction, we can not distinguish
these two pockets from the angular dependent oscillation
frequency in present measurement. For pocket η, the
quantum oscillation frequency, F × cos θ decreases a lit-
tle bit with increasing θ, but its change is much smaller
when compared to pocket β. This is consistent with the
calculated Fermi surface (Fig. 2(d)), which shows that
the dispersion along kz direction is much smaller than
the value along kx and ky directions. Besides that, the
Dirac fermions with linear bands have much larger mo-
bility and Fermi velocity than the regular carriers, and
will dominate the transport properties. Hence, the an-
gular dependent magnetoresistance (Fig. 3(b) and (c))
should come from the quasi-two-dimensional Dirac Fermi
pockets.
Our results demonstrate the possible universal exis-
tence of two dimensional Dirac fermions in layered struc-
ture compounds with two-dimensional Bi square nets,
irrespective of magnetic order. So it is important to
study the relationship between the CDW transition and
the Dirac fermions. For the systems with charge den-
sity wave or spin density wave, the phase transition of-
ten induces band-folding of some Fermi surface sections.
CDW was found in LaAgSb2 and LaSb2, where calcu-
lated Fermi surfaces without CDW transition agree very
well with low-temperature quantum oscillation results in
CDW state.33 -- 35 In LaAgBi2, the observed three frequen-
cies are consistent with the calculated Fermi surfaces
along Γ-M and Γ-X directions (Fig. 2(b) and (d)) af-
ter a moderate energy shift (∼ 20 meV), but the large
hole pockets centered at Γ point is absent in the dHvA os-
cillation, which is similar to the results in LaAgSb2.33,35
Hence, the CDW transition most likely smears out the
large hole pocket and induces the shift of the energy
of other three pockets which host Dirac fermions. The
x-ray scattering experiments in LaAgSb2 revealed that
the nesting of the Fermi surfaces responsible for the two
CDWs happens in band 1 centered at Γ point and band
3 extending throughout the zone with the vertices of the
squares at the X point. The Fermi surfaces of LaAgBi2
should be similar to these of LaAgSb2 because of the sim-
ilar structure. So it could be expected that the nesting
happens in the band centered at Γ point (Fig. 2(c)) in
LaAgBi2. The band α of LaAgBi2 centered at X point
(Fig. 2(a)) which hosts Dirac fermions remains unaf-
fected by the nesting or CDW transition. The band 3
in LaAgSb2 separates to two bands (β, η) (Fig. 2(d)) in
LaAgBi2 which lose the nesting condition. So the bands
which host Dirac fermions in LaAgBi2 are most likely
intact at the CDW transition.
IV. CONCLUSION
In summary, first-principle calculation, de Hass-van
Alphen oscillation study of the electronic structure and
magnetoresistance behavior of LaAgBi2 show striking
similarity to properties of (Sr,Ca)MnBi2. LaAgBi2 has
no magnetic ions and is a paramagnetic metal without
long range magnetic order. Yet, the band structure
clearly shows several narrow bands with nearly linear en-
ergy dispersion and Dirac-cone-like points at the Fermi
level. This is in agreement with the quantum oscillation
experiments that revealed three Fermi pockets with small
7
cyclotron resonant mass. The in-plane transverse magne-
toresistance exhibits a crossover at a critical field B∗ from
semiclassical weak-field B2 dependence to the high-field
unsaturated linear magnetoresistance which is a hallmark
of the quantum limit of the Dirac fermions. The tem-
perature dependence of B∗ satisfies quadratic behavior,
which is attributed to the splitting of linear energy dis-
persion in high field. Our results demonstrate the possi-
ble universal existence of two dimensional Dirac fermions
in layered structure compounds with two-dimensional Bi
square nets, irrespective of magnetic order.
ACKNOWLEDGMENTS
We than John Warren for help with SEM measure-
ments. Work at Brookhaven is supported by the U.S.
DOE under contract No. DE-AC02-98CH10886. The
high magnetic field studies in NHMFL were supported
by NSF DMR-0654118, the State of Florida and DOE
NNSA DE-FG52-10NA29659.
1 A. H. Castro Neto, F. Guinea, N. M. R. Reres, K. S.
Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109
(2009).
2 D. S. L. Abergel, V. Apalkov, J. Berashevich, K. Ziegler,
and T. Chakraborty, Adv. Phys. 59, 261 (2010).
3 M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045
15 K. Wang, D. Graf, H. Lei, S. W. Tozer, and C. Petrovic,
Phys. Rev. B 84, 220401(R) (2011).
16 K. Wang, D. Graf, L. Wang, H. Lei, S. W. Tozer, and C.
Petrovic, Phys. Rev. B 85, 041101(R) (2012).
17 A. Kobayashi, et al. J. Phys. Soc. Jpn. 76, 034711 (2007).
18 E. Brechtel, G. Cordier and H. Schaffer, Z. Naturforsch. B
(2010).
35, 1 (1980).
4 X. L. Qi and S. C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).
5 A. A. Abrikosov, Fundamentals of the Theory of Metals
(North-Holland, Amsterdam, 1988).
19 P. Dietl, F. Pi´echon, and G. Montambaux, Phys. Rev. Lett.
100, 236405 (2008).
20 Geunsik Lee, Muhammad A. Farhan, Jun Sung Kim, Ji
6 Y. Zhang, Z. Jiang, Y.-W. Tan, H. L. Stormer, and P. Kim,
Hoon Shim, arXiv:1301.1087v1 (2013).
Nature 438, 201 (2005).
21 C. Petrovic, S. L. Bud'ko, J. D. Strand, and P. C. Canfield,
7 D.-X. Qu, Y. S. Hor, J. Xiong, R. J. Cava, and N. P. Ong,
J. Magn. Magn. Mater. 261, 210 (2003).
Science 329, 821 (2010).
8 J. G. Analytis, R. D. McDonald, S. C. Riggs, J.-H. Chu,
G. S. Boebinger, and I. R. Fisher, Nature Phys. 6, 960
(2010).
9 K. K. Huynh, Y. Tanabe, and K. Tanigaki, Phys. Rev.
Lett. 106, 217004 (2011).
10 H.-H. Kuo, J.-H. Chu, S. C. Riggs, L. Yu, P. L. McMa-
hon, K. D. Greve, Y. Yamamoto, J. G. Analytis, and I. R.
Fisher, Phys. Rev. B 84, 054540 (2011).
11 P. Richard, K. Nakayama, T. Sato, M. Neupane, Y.-M.
Xu, J. H. Bowen, G. F. Chen, J. L. Luo, N. L. Wang, X.
Dai, Z. Fang, H. Ding, and T. Takahashi, Phys. Rev. Lett.
104, 137001 (2010).
12 T. Morinari, E. Kaneshita, and T. Tohyama, Phys. Rev.
Lett. 105, 037203 (2010).
13 J. Park, G. Lee, F. Wolff-Fabris, Y. Y. Koh, M. J. Eom,
Y. K. Kim, M. A. Farhan, Y. J. Jo, C. Kim, J. H. Shim,
and J. S. Kim, Phys. Rev. Lett. 107, 126402 (2011).
14 J. K. Wang, L. L. Zhao, Q. Yin, G. Kotliar, M. S. Kim,
M. C. Aronson, and E. Morosan, Phys. Rev. B 84, 064428
(2011).
22 M. Weinert, E. Wimmer, and A. J. Freeman, Phys. Rev.
B 26, 4571 (1982).
23 P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka and
J. Luitz, WIEN2k, An Augmented Plane Wave + Local
Orbitals Program for Calculating Crystal Properties (Karl-
heinz Schwarz, Techn. Universitat Wien, Austria), 2001.
ISBN 3-9501031-1-2
24 J. P. Perdew, K. Burke and M. Ernzerhof, Phys. Rev. Lett.
77, 3865 (1996).
25 B. Hunter, "RIETICA - A Visual RIETVELD Prog-
arm," International Union of Crystallography Commission
on Powder Diffractin Newsletter No. 20 (Summer), 1998
(http://www.rietica.org).
26 H. Flandorfer, O. Sologub, C. Godart K. Hiebl, A. Leithe-
Jasper, P. Rogl, and H. Noel, Solid State Commun. 97,
561 (1996).
27 R. Xu, A. Husmann, T. F. Rosenbaum, M.-L. Saboungi, J.
E. Enderby, and P. B. Littlewood, Nature 390, 57 (1997).
28 M. Lee, T. F. Rosenbaum, M.-L. Saboungi, and H. S.
Schnyders, Phys. Rev. Lett. 88, 066602 (2002).
29 W. Zhang, R. Yu, W. Feng, Y. Yao, H. Weng, X. Dai, and
Z. Fang, Phys. Rev. Lett. 106, 156808 (2011).
30 Y. Zhang, Z. Jiang, Y.-W. Tan, H. L. Stormer, and P. Kim,
Nature 438, 201 (2005).
31 D. Miller, K. Kubista, G. Rutter, M. Ruan, W. de Heer,
P. First, and J. Stroscio, Science 324, 924 (2009).
32 D. Shoeneberg, Magnetic oscillation in metals (Cambridge
University Press, Cambridge, 1984).
33 K. D. Myers, S. L. Budko, V. P. Antropov, B. N. Harmon,
P. C. Canfield, and A. H. Lacerda, Phys. Rev. B 60, 13371
(1999).
8
34 R. G. Goodrich, D. Browne, R. Kurtz, D. P. Young, J.
F. DiTusa, P. W. Adams, and D. Hall,Phys. Rev. B 69,
125114 (2004)
35 Y. Inada, A. Thamizhavel, H. Yamagami, T. Takeuchi,
Y. Sawai, S. Ikeda, H. Shishido, T. Okubo, M. Yamada,
K. Sugiyama, N. Nakamura, T. Yamamoto, K. Kindo, T.
Ebihara, A. Galatanu, E. Yamamoto, R. Settai, and Y.
Onuki, Philosophical Magazine 82, 1867 (2002)
36 S. Song, J. Park, J. Koo, K. -B. Lee, J. Y. Rhee, S. L.
Bud'kov, P. C. Canfield, B. N. Harmon, and A. I. Goldman,
Phys. Rev. B 68, 035113 (2003).
|
1709.05783 | 1 | 1709 | 2017-09-18T06:20:34 | Exact solution for many-body Hamiltonian of interacting particles with linear spectrum | [
"cond-mat.mes-hall"
] | The exact solution of the Schr\"odinger equation for the one-dimensional system of interacting particles with the linear dispersion law in an arbitrary external field is found. The solution is reduced to two groups of particles moving with constant velocities in the opposite directions with a fixed distance between the particles in each group. The problem is applied to the edge states of the 2D topological insulator. | cond-mat.mes-hall | cond-mat | a
Exact solution for many-body Hamiltonian of interacting particles with linear
spectrum
M.V. Entin1, 2 and L. Braginsky1, 2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090, Russia
2Novosibirsk State University, Novosibirsk 630090, Russia∗
The exact solution of the Schrodinger equation for the one-dimensional system of interacting
particles with the linear dispersion law in an arbitrary external field is found. The solution is
reduced to two groups of particles moving with constant velocities in the opposite directions with
a fixed distance between the particles in each group. The problem is applied to the edge states of
the 2D topological insulator.
Introduction
One-dimensional electron systems with the linear dis-
persion are the topical issue now: the edge states1-3 of
the 2D topological insulator4, graphene strips, carbon
nanotubes5-7, etc. The specificity of these systems is the
presence of the double degenerate state at the zero longi-
tudinal momentum that has a linear splitting at a finite
momentum.
The 1D systems with near-linear spectrum are the sub-
ject of study in the theory of bosonization and Luttinger
liquid8. This approach considers the electron Fermi liq-
uid of strongly-interacting electrons assuming their en-
ergy spectrum to be approximately linear near the Fermi
energy. The bosonization procedure separates the long-
(q ≪ pF ) and short-range (q ≈ 2pF ) interactions consid-
ering them in different ways. In general, this approach is
approximative and applicable near the Fermi points only.
Note that the curvature of the energy spectrum caused
by the k-p expansion violates the linearity. For example,
such non-linear corrections to the energy spectrum ex-
ist in graphene where they determine the unconventional
character of the e-e scattering9 and e-h coupling to the
excitons10. The linear spectrum of the 2D TI edge states
is the main reason of disappearance of the electron cor-
relation energy13.
In11 we have studied the linearity of the energy spec-
trum in the edge states of the 2D topological insulator.
We concluded that in two models of the edge states12
and1-3 the linearity is absolute, while in other cases the
non-linear corrections are extremely weak. This pushes
forward the problem of the many-electron states in the
system with the linear single-electron energy spectrum.
The purpose of the present paper is the general con-
sideration of the one-dimensional system with the many-
body Hamiltonian
H = Xi
(
1
¯h
vσipi + U (xi)) +Xi<j
V (xi − xj ).
(1)
Here U (x) is an external field, and V (xi − xj) is the
interaction between the particles, [xi, xj] = 0, [pi, pj] =
0, [pi, xj] = −i¯h. For certainty we consider σi = ± (or
equivalently, σi =↑, ↓) as a spin quantum number. Below
we shall set ¯h = 1. The coordinates of spin-up and spin-
down electrons are denoted as xi and yi, accordingly.
The Hamiltonian Eq.(1) is valid for the edge states of
electrons in 2D topological insulators11.
The linearity of the energy spectrum is the most impor-
tant for our consideration. We obtain an exact solution
of this quantum problem. Unlike the case of the Lut-
tinger liquid, we do not need low temperatures and the
vicinity of the energy to the Fermi level. Owning to the
exact linearity of the spectrum our results are valid for
all energies.
Exact solution of many-body Schrodinger equation
In the absence of interaction the direction of motion
coincides with the spin sign, so that the spin-up and
spin-down electrons are rightmovers and leftmovers, cor-
respondingly. The exact solution of the Schrodinger
equation for a single particle with energy E = pv is
ψ(x) = exp(ipx − iR dxU (x)/v). This is the wave func-
tion of constant density ψ2. The result essentially differs
from that for a particle with a quadratic kinetic energy.
Consider now two free (U (x) = 0) particles with posi-
tive spins. The Hamiltonian
H = vp1,↑ + vp2,↑ + V (x1 − x2)
commutes with x1 − x2 conserving, therefore, the dis-
tance between the particles. Then the wave function
can be chosen as the eigenfunction of x1 − x2 and the
total momentum P = p1,↑ + p2,↑: ψ = A exp(iP (x1 +
x2)/2)δ(x1 − x2 − a), where a is the eigenvalue of x1 − x2.
The corresponding selfenergy is
E = P v + V (a).
The normalizing coefficient A should be chosen to ex-
clude the divergence of the integral R dxδ2(x). This di-
vergence inevitably appears when one uses the selffunc-
tions of the coordinate operator. It can be formally fixed
by the choice A2 = 1/δ(0).
For the case of n rightmovers we write
ψ(x1, ....xn) = An exp(iP X)(Πkδ(xk+1 − xk − ak)), (2)
where X = Pi xi/n, P = Pi pi,↑ is the total momentum.
The selfenergy is
E = P v +Xi<j
V (aij ) ,
aij =
j−1
Xi
ak.
(3)
impurity, potential U (xi)
To include an external, e.g.
into consideration, we multiply the wave function Eq. (2)
by the factor
u = exp(−iZ dx1Xj
U (x1 + aj)).
The antisymmetry of the coordinate part of the wave
function can be achieved by means of the Slatter deter-
minant composed of the functions fi,j = δ(xi − xj − ai,j).
Thus, the wave function of the n right- (left-)movers is
ψ(x1, ....xn) = u exp(iP X)det(fi,j).
(4)
Consider now two particles of the opposite spins with
the Hamiltonian:
H = vp↑ − vp↓ + V (x − y).
The wave function can be chosen as the eigenfunction of
x + y with selfvalue 2c:
ψ = exp(cid:18)iP ′(x − y)/2 − iZ dxV (2b − 2x)/v(cid:19) ×
Aδ(x + y − 2c). (5)
Here P ′ = p1 − p2, the corresponding selfenergy is E =
P ′v.
Finally, consider a general case of n spins up and m
spins down. The Hamiltonian commutes with the central
point between each leftmover and rightmover (x1 +y1)/2.
The sufficient condition is a fixation of one of these vari-
ables, e.g., x1 + y1 = 2c. Hence, the state with the quan-
tum numbers P, c, {ak}, {bk} is
P, c, {a1, ...an−1}, {b1, ...bm−1}i =
ψ(x1, ..xn; y1, ...ym) = Φ exp(iP ζ)Aδ(y1 + x1 − 2c) ×
n−1
m−1
Aδ(xk+1 − xk − ak) ×
Yk
Yk
Aδ(yk+1 − yk − bk)),(6)
where ζ = (x1 − y1)/2, m > 1, n > 1. If m = 1 or n = 1,
the corresponding product in Eq.(6)should be replaced
by unity. Substituting into the Schrodinger equation, we
find the proportionality factor
n,m
V(x1) =
Φ = exp(cid:16) −
Xi,j
Xi=1
Xk=i
U(x1) =
ai,j =
j−1
n
ak,
2
The corresponding energy is
E = P v + U , U = Xi>j
U (ai,j) +Xi>j
U (bi,j) .
(9)
The case of an arbitrary number of identical electrons
with different spins should be considered using the per-
mutation symmetry and Young diagrams. The ground
state of the system corresponds to the equal numbers of
up and down spins, so that the total spin is zero. Note
that in this state the average velocity vanishes. Thus,
the spin wave function is symmetric with respect to all
particles, and the coordinate wave function should be
antisymmetric with respect to all coordinates. To con-
struct the appropriate coordinate wave function, we need
to antisymmetrize the wavefunction.
Neglecting the particle exchange, each of subsystems
of right- and leftmovers represents a solid superparti-
cle, inside which the distances between the electrons are
fixed. The right and left moving superparticles (RMS)
and (LMF) obey the linear dispersion. The Hamiltonian
of the RMS and LMS interaction depends on the distance
between the electrons belonging to the different super-
particles. Thus, RMS and LMS can be considered as
two opposite moving superparticles and the two-particle
wave function can be used to describe their relative mo-
tion. This is an explanation of Eqs. (6) and (7).
Cyclic boundary conditions
In the previous consideration we assumed that the co-
ordinates change in the infinite domain −∞ < xi < ∞.
In this case the energy is expressed via the total and rel-
ative momenta of the left- and right-movers (9) and the
interaction energies inside the groups. It is important to
point out that the interactions between the carriers from
different groups as well as the carriers with the impurities
do not contribute to the total energy.
Actually, this is consequence of the problem formula-
tion. We have considered an infinite system with the
finite number of interacting electrons. In this case elec-
trons with different spins being separated at infinite dis-
tance can be characterized by their momenta at the in-
finity. In a dense system, however, this is not the case.
Consider now a cyclic system of the length L assuming
xi + L = xi. Suppose the potentials V (x) and U (x)
to be the periodic functions of L. For this reason we
replace x by the distance between points on the circle
x → (L/2π) sin(2πx/L).
In particular, the δ-functions
in the previous expressions have to be replaced by their
periodic generalizations δ(x) → (2π/L)δ(sin(2πx/L)).
The cyclic boundary condition reads ψ(x1, ...xi +
L, ...) = ψ(x1, ...xi, ...). Consider first the two-particle
problem with the opposite spins. In this case the quan-
tization rule Eq. (3) is
(7)
i
v Z x1
dx1(V(x1) + U(x1)(cid:17)
V(cid:16)2x1 − 2c + ai,1 − bi,1(cid:17)
U(cid:16)x1 + ai,1(cid:17) −
Xi=1
m
U(cid:16)2c − x1 + bi,1(cid:17)
bi,j =
j−1
Xk=i
bk.
(8)
E =
2πvN
L
+
1
L Z L
0
(V (x) + 2U (x)) dx,
where N is an integer. The second term here is the av-
erage interaction, which has to be added to the total
energy. The generalization of the quantization rule to
many particles is
n,m
E = 2πvN (n − m)/L +
V (sσ,i,j) +
Xσ=±,i,j
V (x)dx + (n + m)Z L
0
nmZ L
0
3
magnetic impurity scattering. The transition between
the states occurs at the terms crossing points (when the
total energies of two states are equal at coinciding elec-
tron positions).
Consider an impurity whose spin S interacts with the
electron spin σi/2. The Hamiltonian of spin-spin inter-
action is
U (x)dx.
(10)
Hss = U0Xn
δ(xn)(Sσn)
(11)
In accordance with Eq.(10), the total energy incorporates
the intra-group interaction and averages of the external
field and inter-group interaction. The physical meaning
can be simply understood: electrons with same spins con-
serve the distance between each other (and, consequently
the sum of the potentials in Eq.(10)) and move through
the impurity lattice and the electrons with opposite spins,
averaging the interaction with them (the second line in
Eq.(10)).
It is clear from Eq.(10) that the electron density is
not affected by an external potential. This explains the
absence of the correlation energy13 for the system with
the linear spectrum.
Note that P , ak, bk and c compose the full set of
the numbers describing the system state. Variable P is
a quantum number.
It is quantizing in a closed edge
the same way as the non-interacting particles momenta.
The distances between the same-spin particles ak, bk
and the quantity c are the classical variables. This can
be seen from the Hamiltonian which corresponds to the
limit ¯h → 0. The set of classical variables have arbitrary
values; they have infinite masses and are resting. To
some extent, this situation reminds the molecular sys-
tems where the electron coordinates are quantum quan-
tities while the ion coordinates are classical. It is known
that the molecular system can be considered via the
molecular terms: the electronic levels are determined at
fixed arbitrary positions of the ions, while the motion of
the latter is considered classically where the terms, play
the role of the interaction potential. (This description is
limited by crossing of the molecular terms). The relative
momentum P is a global variable. Thus, the quantities
ak, bk and c obey the Boltzmann statistics. This explains
how to make average of the observable quantities.
Scattering of interacting electrons at a magnetic
impurity
The exact solution permits one to include perturbingly
other interaction mechanisms that can affect the re-
sponses, for example, an interaction with magnetic impu-
rities or the spin-orbit interaction with phonons. Here,
as an example, we consider backscattering of the elec-
trons by a magnetic impurity. The backscattering is for-
bidden without such an interaction violated the time-
reversibility. The e-e interaction essentially modifies the
For the two-electron system we find the matrix elements
M = U0/2ei(P +P ′)aδ(a − 2b) and the transition rate T =
U 2
0 V (x) dx
is a correction to the total energy due to interaction. In
the general case, the matrix element between the wave
0 /4δ[E −(P ′−P )v−δV ]. Here δV = V (a)−R L
functions (6) is equal to M = U0/2Pij ei(P +P ′)aij δ(aij −
Pij Vij − (n − m + 1)R L
0 /4δ[E − (P ′ − P )v − δV ], where δV =
0 V (x) dx includes correction to
the interaction energy Vij after transition of the electron
from left- to rightmover ensemble or vice-versa.
2b) and T = N U 2
the
Now study
the many-body problem.
states
2i
transition between the
sider
P, c, {a1, ..an−1}, {b1, ...bm−1}i
P ′, c′, {a2, ...an−1}, {a1, b1, ...bm−1}i.
tering rate at fixed quantum numbers is
Con-
1i =
=
The backscat-
and
2πh1Hss2i2 ×
Xj=1
δ(vP − vP ′ +
n−1
m−1
Xj=1
U (aj) −
n−1
U (bj)) =
2πU02δ(vP − vP ′ +
Xj=1
δ(aj + 2c)δ(bk + 2c′)
× Xj,k
U (aj) −
m−1
Xj=1
U (bj))
(12)
Averaging with respect to c, c′ gives
δ(aj + 2c)δ(bk + 2c′)i = (n − 1)(m − 1)/L2.
hXj,k
The physical meaning of Eq.(12) is simple. An electron
changing its spin simultaneously changes its interaction
energy with all electrons with the same spins to the in-
teraction energy with the opposite-spin-electrons. This
difference of potential energies is transmitted to the dif-
ference of the kinetic energies establishing the thermal
equilibrium between the kinetic and potential energies.
Classical variables obey the Boltzmann statistics in
the thermal equilibrium. Let us now average the energy
delta-function over this distribution:
R = R Q daidbj exp(−β U )δ(...)
R Q daidbj exp(−β U )
.
(13)
In the nearest-neighbor approximation we obtain
R = Z ∞
−∞
dt
2π
eitv(P −P ′) exp(cid:26) 1
L Z dahn(e(it−β)U(a) − 1) + m(e(−it−β)U(a) − 1)i(cid:27) (cid:30) exp(cid:26) n + m
L Z dahe−βU(a) − 1i(cid:27)
4
Eq. (13) gives a symmetric dependence of the transition
probability on P − P ′, which is determined by the func-
tion U (a). A careful examination goes beyond the scope
of the paper.
Conclusions
In conclusion, we have found the exact solution of
the interacting many-particle 1D system with the lin-
ear single-particle spectrum. The Hamiltonian includes
an external potential (e.g.,
impurities) as well. The
Schredinger equation solution is reduced to the separa-
tion of the system to the groups of right- and left-moving
carriers with the constant velocity. The interactions be-
tween groups and with impurities are reflected in the
phase factor in the wave function. The relative coor-
dinates in each group turn out to be classical conserv-
ing variables, while the relative momentum of all carriers
is a global quantum number. The collective selfenergy
consists of the linear in momentum kinetic part and the
potential energy of interaction at a fixed interparticle dis-
tance inside the groups. In the framework of the Hamil-
tonian Eq. (1) the backscattering is absent. The formal
solution is applicable to the edge states of the 2D topolog-
ical insulator. In a separate paper11 we have found that
the edge states have either an exact linear single-electron
spectrum in the most models of the 2D topological insu-
lator or this spectrum is numerically linear. Hence, the
results of the present paper directly pertain to these edge
states.
Unlike the Luttinger liquid, our solution is not linked
It is
to the Fermi level of the non-interacting system.
also valid in a strongly non-equilibrium situation.
The conservation of the distances between the same-
spin electrons makes relaxation of such system to the
equilibrium impossible, unless some additional term are
taken into account.
In accordance with the obtained equations the imple-
mentation of the e-e and electron-impurities interactions
has no effect on the velocity matrix elements. That
means that the conductivity of the system is also not
changed and stay infinite for the system of interacting
electrons.
The exact solutions permitted one to include per-
turbingly the interaction with the magnetic impurities
that was not included in the Hamiltonian (1).
It was
found that the e-e interaction essentially affects the
backscattering. Note that other mechanisms, like the
spin-orbit interaction with phonons, can be studied in
the same way.
One other remark concerns possibility of the gener-
It obviously can be
alization of the Hamiltonian (1).
generalized to
(vσipi + Ui(xi) + σiU (1)
i
(xi)) +
H = Xi
Xi<j
(Vij (xi − xj) + σiσj V (1)
ij (xi − xj )),
(14)
with similar consequences.
Acknowledgements
This research was supported by RFBR grant No 17-02-
00837. The authors thank A.V. Chaplik for stimulating
discussions.
∗ Electronic address: entin@isp.nsc.ru
1 Xiao-Liang Qi, Shou-Cheng Zhang, Rev.Mod.Phys., 83,
1057 (2011).
2 Bin Zhou, Hai-Zhou Lu, Rui-Lin Chu, Shun-Qing Shen,
and Qian Niu, Phys.Rev.Lett., 101, 246807 (2008).
3 M.Konig, H.Buhmann, Laurens W. Molenkamp, T.
Hughes, Chao-Xing Liu, Xiao-Liang Qi, Shou-Cheng
Zhang, J.Phys.Soc.Jpn., 77, 031007 (2008).
4 B.Andrei Bernevig, Taylor L.Hughes, Shou-Cheng Zhang,
8 Alexei M.Tsvelik. Quantum Field Theory in Condensed
Matter Physics 2nd Edition Cambridge University Press,
Cambridge UK(2003)
9 L. E. Golub, A. Tarasenko M. V. Entin and L. I. Magarill,
Phys. Rev. B, 84 195408 (2011).
10 Europhysics Lett. 102,3712 (2013).
11 M. V. Entin, M. M. Mahmoodian, and L. I. Magarill, Eu-
rophys. Lett. 118, 57002 (2017).
12 B.A. Volkov, O.A. Pankratov Pis'ma Zh. Eksp.Teor. Fiz.
Science, 314, no. 5806, 1757 (2006).
42,145(1985) [JETP Lett,42, 178(1985)].
5 D.S. Miserev, M.V. Entin Zh. Eksp. Teor. Fiz. 142,
13 M.V. Entin and L. Braginsky, Phys. Rev. B, 96 115403
784(2012)[JETP 115, 694 (2012)].
6 D.S. Miserev, M.V. Entin JETP Letters 99, 410 (2014).
7 D.S. Miserev, JETP 149, 1223 (2016)
(2017).
|
1204.5206 | 2 | 1204 | 2013-01-22T18:00:28 | Fast Two-Qubit Gates in Semiconductor Quantum Dots using a Photonic Microcavity | [
"cond-mat.mes-hall",
"quant-ph"
] | Implementations for quantum computing require fast single- and multi-qubit quantum gate operations. In the case of optically controlled quantum dot qubits theoretical designs for long-range two- or multi-qubit operations satisfying all the requirements in quantum computing are not yet available. We have developed a design for a fast, long-range two-qubit gate mediated by a photonic microcavity mode using excited states of the quantum dot-cavity system that addresses these needs. This design does not require identical qubits, it is compatible with available optically induced single qubit operations, and it advances opportunities for scalable architectures. We show that the gate fidelity can exceed 90% in experimentally accessible systems. | cond-mat.mes-hall | cond-mat | Fast Two-Qubit Gates in Semiconductor Quantum Dots using a Photonic Microcavity
Dmitry Solenov,1 Sophia E. Economou,1, ∗ and T. L. Reinecke1
1Naval Research Laboratory, Washington, District of Columbia 20375, USA
Implementations for quantum computing require fast single- and multi-qubit quantum gate op-
erations. In the case of optically controlled quantum dot qubits theoretical designs for long-range
two- or multi-qubit operations satisfying all the requirements in quantum computing are not yet
available. We have developed a design for a fast, long-range two-qubit gate mediated by a photonic
microcavity mode using excited states of the quantum dot-cavity system that addresses these needs.
This design does not require identical qubits, it is compatible with available optically induced single
qubit operations, and it advances opportunities for scalable architectures. We show that the gate
fidelity can exceed 90% in experimentally accessible systems.
I.
INTRODUCTION
Quantum information processing involves the manip-
ulation of entanglement carried out by unitary gate op-
erations between different quantum bits (qubits). Re-
alistic quantum computing architectures require entan-
gling gates between distant qubits. Optical photons pro-
vide a natural vehicle to implement such interactions in
many physical systems.1 As a result, architectures based
on optically active qubits that can couple to photonic
modes in optical cavities and waveguides, such as quan-
tum dots, NV centers, and trapped ions are attractive
for large scale quantum computing.2 -- 5 Quantum dots
(QDs) in particular hold promise as qubits for such ar-
chitectures, in part owing to their large dipole moments,
which allow them to couple efficiently to the optical cav-
ity modes and to photonic flying qubits for extended ar-
chitectures. Qubits encoded by the spin of an electron
in a QD have long coherence times which are five to six
orders of magnitude longer than the typical picosecond
scale of optical control. Successful initialization and read-
out, as well as fast optical single spin rotations, have
been demonstrated in these systems.6,7 In addition, im-
portant advances have recently been achieved in work on
coupled cavity-QD systems, including demonstrations of
strong coupling and tunability,5,8 -- 15 and very recently
full single-qubit control.16
A critical step needed to advance the field is the de-
sign of a two-qubit controlled gate operation mediated
by an optical cavity mode. A viable two-qubit quantum
gate requires that several criteria are met: (i) a long-
range switchable physical interaction between qubits is
available; (ii) the gate performs a unitary operation on
one qubit depending on the state of the other qubit to
provide a controlled operation; (iii) the operations are
sufficiently fast compared to decoherence rates; (iv) the
gate is compatible with single-qubit rotations (to form a
universal set of gates); (v) the gate design is consistent
with a multi-qubit system for scalability.
So far, only local control of entanglement in closely
spaced quantum dots (QD 'molecules') has been demon-
strated experimentally.17 For an experimental demon-
stration of cavity-mediated entangling gates, a theoreti-
cal design is needed that satisfies the above criteria, (i)-
(v), while being experimentally simple and compatible
with current technology. Existing proposals for cavity-
mediated gates have not met these requirements; they
are either incompatible with single-qubit gates,18 limited
to nearest-neighbor qubits,19 and/or require adiabaticity,
either through adiabatic evolution19 or through adiabatic
elimination of the auxiliary state.20 As a result, they are
much slower than what is needed from a quantum infor-
mation processing perspective. Moreover, a careful as-
sessment of the performance of such gates as a function
of system parameters has not been given in the litera-
ture, despite the key role it would play in experimental
demonstrations.
In this paper we give a novel design for an entan-
gling control-z (CZ) two-qubit gate21 that satisfies all the
above criteria. Our design does not require the QD ener-
gies to be equal or dynamically tunable. As a result, our
approach is compatible with single qubit operations and
has a potential for many-qubit scalable architectures. We
obtain fidelities in excess of 90% for realistic parameters.
In the following we explain the concept of this all-optical
gate, formulate the model, calculate the QD-cavity sys-
tem spectrum, and analyze our design of the two-qubit
gate protocol. The fidelity of the gate operation as a
function of the system parameters is also calculated and
provides a guide for experiment.
II. TWO-QUBIT GATES
The control-z gate is a maximally entangling two-qubit
gate, and it is given by UCZ = diag(1, 1, 1,−1).
It is
equivalent to the more familiar control-NOT (CNOT) op-
√
eration up to single-qubit gates. Specifically, UCN OT =
(1⊗H)UCZ(1⊗H), where H = (1 1
1 −1)/
2 is the Hadamard
gate. To see the entangling capability of CZ we can look
at its action on a product state of two qubits. In partic-
ular, when each qubit is in an equal superposition of the
basis states, we have
(cid:0)1(cid:105) + 0(cid:105)(cid:1) ⊗(cid:0)1(cid:105) + 0(cid:105)(cid:1) = 11(cid:105) + 10(cid:105) + 01(cid:105) − 00(cid:105),
UCZ
which is a maximally entangled two-qubit state, also
known as a two-qubit 'cluster state'. Such a state is
equivalent to a Bell state up to single-qubit rotations.
3
1
0
2
n
a
J
2
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
6
0
2
5
.
4
0
2
1
:
v
i
X
r
a
To implement the CZ gate, we need to accumulate a
phase factor of −1 selectively to only one of the two-qubit
basis states, taken to be 00(cid:105) above. Meanwhile, to be
able to perform single-qubit gates, the transition involv-
ing state 00(cid:105) and an auxiliary state should be performed
in parallel with that involving 01(cid:105) (or 10(cid:105) for rotations of
the second qubit) and its corresponding auxiliary state.
To avoid dynamically tuning energies -- a process that is
costly in time and can compete with coherence times --
we will use different classes of auxiliary states for single-
qubit and two-qubit operations.
In particular, we will
use a near-resonance between the two-photon state of
the cavity and the state where both QDs are excited.
III. QUANTUM DOTS IN A CAVITY
We focus on a system of two (singly) charged self-
assembled InAs QDs in a photonic crystal microcav-
ity. This structure can support in- and out-of-plane
polarizations.22 Due to strain the optical dipole transi-
tion matrix elements in the InAs dots are anisotropic,
resulting in efficient absorption of light with electric field
polarization perpendicular to the QD growth axis. As
a result, only the mode with electric field polarized in
the plane of the crystal can be coupled to transitions in
QDs. We take an external magnetic field to be applied
in-plane (Voigt configuration), perpendicular to the QD
growth direction. This will enable full single qubit con-
trol as explained in Ref. 20.
The system can be represented by two separate four-
state QDs interacting with a single photon mode, as
shown in Fig. 1(a). The two lowest energy states of
each four-state system are the spin states of the elec-
†
tron in each dot, which represent the qubit, ↑(cid:105) = c
n,↑(cid:105)0
†
and ↓(cid:105) = c
n,↓(cid:105)0, where n = 1, 2 refers to the two
†
↑(↓) creates an electron of spin ↑ (↓) rela-
dots and c
tive to the uncharged QD state (cid:105)0. The two excited
states in each dot are electron-exciton bound states,
called trions (or charged excitons). They are complexes
having total angular momentum 3/2. The two ±3/2
states ('heavy holes') are energetically lower than the
±1/2 ('light hole') states and thus form a pseudo spin
†
†
†
†
⇑(cid:105) = t
n,⇑(cid:105)0 and similarly for ⇓(cid:105),
n,↑(cid:105)0 = c
n,↓h
n,↑c
where h† is the creation operator for a heavy hole. The
trion states carry the pseudospin of the hole because the
two electrons are in a spin singlet. We choose the spin
quantization axis along the external magnetic field.
The cavity couples to the trion transitions and pre-
serves the (pseudo) spin orientation, ↑(cid:105) ↔ ⇑(cid:105) and ↓(cid:105) ↔
⇓(cid:105). In the rotating-wave approximation the cavity-dot
interaction is
(cid:88)
(cid:16)
HQD−C = g
(cid:17)
†
†
n,↑cn,↑a + t
n,↓cn,↓a + h.c.
t
(1)
n=1,2
where a annihilates a photon in the cavity and g is the
coupling between the trion transition and the cavity. We
2
(a) Energies and relevant
FIG. 1: The cavity-dot system.
states of two QDs and cavity.
(b-e) Interacting cavity-dot
spectrum as a function of the cavity mode frequency, ω0.
(b) Structure of crossings and corresponding states. Panels
(c) and (d) show the anti-crossing splittings in the two- and
single-excitation subspaces respectively. Panel (e) shows the
energy structure of the qubit subspace, which is unaffected
by the coupling to the cavity mode. The numbers in (c-e)
give the states of the diagonalized Hamiltonian, and the ↑, ↓
show the predominant spin character of each state far (to the
right) of the avoided crossings. Vertical dashed lines indicate
(ε1 + ε2)/2.
choose these coupling constants to be the same for the
two QDs to simplify the presentation. This assumption
is not important to the proposed procedure and can be
relaxed when necessary.
The spectrum of the cavity-QD system is shown in
Fig. 1 as a function of the cavity frequency ω0. This
representation does not suggest the need to tune ω0 dy-
namically, but it helps to identify the region of optimal ω0
values. The spectrum is obtained by diagonalizing H0 =
†
n,ξcn,ξ+
†
n,ξ[εn+ωhθ(ξ)]tn,ξ, HC = ω0a†a, ξ =↑,↓, θ(↑) = 0,
n,ξ t
HQD + HC + HQD−C, where HQD =(cid:80)
(cid:80)
n,ξωeθ(ξ)c
and θ(↓) = 1.
The Hamiltonian H0 conserves the total number of ex-
citations. As a result the Hilbert space of the system
separates into subspaces with different numbers of ex-
citations. Each subspace contains several states, corre-
sponding to different spin projections. The lowest set
of four states (three energy levels) defines the two-qubit
(a)(b)qubit subspaceone-particle subspacetwo-particles subspacecavity modedot 1dot 2(c)(d)(e)optical control subspace, ↑↑(cid:105), ↑↓(cid:105), ↓↑(cid:105), and ↓↓(cid:105), and has zero cav-
ity photons; we call this the 'zero excitation' subspace.
The other relevant subspaces are the 'one-excitation' sub-
space, that has states with either one cavity photon or
one trion, and the 'two-excitation' subspace, that has
states with two trions (one per dot), states with one trion
and one cavity photon, and states with two cavity pho-
tons; see Appendix A. States in the 'one-excitation' part
of the spectrum are approximately local to each quan-
tum dot and interact with each other only very weakly,
∼ (g/∆ε)2. They are the states that can be used for
single-qubit control.23 The two-excitation subspace in-
volves hybridized states of the two QDs and are ideal for
a two-qubit gate. These states however are not directly
accessible from the qubit subspace with a single pulse, so
we make use of a series of control pulses.
The laser pulses have momentum perpendicular to the
photonic crystal plane to avoid Bragg shielding due to
the photonic crystal. For definiteness we choose pulses
with the same linear polarization as the cavity mode,24
(cid:88)
V(t) =
Ωp(t − tp)2 cos ωpt (Mnmn(cid:105)(cid:104)m+h.c.) .
(2)
p; n>m
where H0 = U†H0U = (cid:80)
(cid:80)
j=1,2,ξ(cid:104)nU†(t
The total Hamiltonian becomes H(t) = H0 + V(t),
n Enn(cid:105)(cid:104)n and Mn,m =
†
†
j,ξtj,ξ)Um(cid:105). The subscript p
j,ξcj,ξ + c
enumerates the pulses used to perform the gate where
each has frequency ωp and is centered at time tp.
IV.
IMPLEMENTATION OF CZ GATE
The CZ gate has a simple diagonal form, which allows
for a relatively straightforward design based on phases
induced by resonant cyclic excitation of an auxiliary ex-
cited state. The idea is to use the property of quantum
two-level systems, in which a cyclic evolution from the
ground state to the excited state and back to the ground
state induces a minus sign to the latter. In the presence
of additional, uncoupled states the minus sign is relative
and thus constitutes a nontrivial quantum evolution. The
pulse performing such an evolution is known as a '2π'
pulse. Optical 2π pulses were proposed theoretically for
single-qubit rotations in quantum dots23 and two-qubit
gates in quantum dot molecules25 and later used in their
experimental demonstrations.7,17
In our approach, the phase accumulation will be on
state ↑↓(cid:105), while keeping the phases of other basis states
unchanged. This can be done by the following pulse se-
quence: (i) a population inversion π pulse, pulse A, tuned
to transition ω1 = ωA = E4−E0 between qubit state ↑↑(cid:105)
and the excited state with similar spin configuration, see
Fig 1(d)-(e). The pulse is also in resonance with E6 − E2
transition, and thus it creates a trion in the first QD only:
both ↑↑(cid:105) and ↑↓(cid:105) are transformed in the same way and
accumulate a phase factor of −i each. (ii) A 2π, or phase,
pulse (pulse B) with frequency ω2 = ωB = E16 − E4,
3
see Fig 1(c)-(d). This induces a transition between the
'one-excitation' states previously created and one of the
'two-excitation' states. Note that if g = 0 or we are far
detuned, ω (cid:29) ∆ε, the transition E10 − E2 would also
occur. This would correspond to a single qubit opera-
tion on the second qubit, i.e., ⇑↑(cid:105) and ↓↑(cid:105) would both
acquire a phase factor of −1. A nonzero g induces forma-
tion of two-excitation states that have different energies,
c.f.
the energy of state 16 and the sum of energies of
states 4 and 8. As a result, the state ⇑↑, or state 4, ac-
quires the factor of −1 after the pulse, while state ↓↑(cid:105)
does not. (iii) Finally, we apply the population inversion
pulse A again, ω3 = ωA, to restore the system to the
qubit subspace. This gives additional factors of −i to
both ↑↑(cid:105) and ↑↓(cid:105), as mentioned above. The two phase
factors of (−i) induce a minus sign to states ↑↓(cid:105) and ↑↑(cid:105),
while the 2π pulse cancels that sign in state ↑↑(cid:105). The
phase between the control pulses A and B does not enter
the result and therefore pulses with unequal frequencies
do not have to be phase locked, which is a significant
experimental convenience.
A physical explanation of this approach is the follow-
ing: because each QD is off-resonant from the cavity,
when only one of the QDs is excited and no other exci-
tations are present in the system the excited QD can be
roughly thought of as isolated, i.e., decoupled from the
cavity and from the other QD. Thus, single excitations
can implement single-qubit operations without disturb-
ing the rest of the system. On the other hand, when both
QDs are excited they are closer to the resonance with the
cavity state. As a result, there is a large mixing between
cavity states and the states of both QDs. Thus, using the
two-excitation regime is a natural venue for performing
two-qubit conditional operations while maintaining the
ability to manipulate each QD spin separately.
V. FIDELITY
Now we consider the gate fidelity, which is a measure
of how close our operation is to the target gate. There
are two types of fidelity losses, those caused by unin-
tended coherent dynamics due to coupling of the lasers
to off-resonance transitions and those originating from
random processes such as trion recombination. First we
focus on the former mechanism. The unintended tran-
sitions can cause Ug to deviate from the ideal UCZ and
effectively cause loss of coherence in the qubit-subspace,
even though the entire operation involving excited states
is unitary and coherent.
To analyze this type of decoherence we compute the
average fidelity, F , of the gate operation, as explained in
detail in Appendix B, including transitions 0-4, 4-6, 2-5,
3-7, 0-8, 2-10, 1-9, 3-11 for pulse A and transitions 4-16,
6-18, 0-8, 2-10, 1-9, 3-11 for pulse B. Other transitions
are negligible either due to vanishing matrix elements
or to large detuning. We chose different pulse widths
for pulse A and pulse B σA = 2σB = 2σ. In Fig. 2(a)
4
FIG. 2: Fidelity of CZ gate with imperfections resulting from coupling of the pulses to neighboring off-resonance optical
transitions (a) as a function of ω0 for σ/ωe = 0.1 for ∆ε/ωe = 8.33, 16.67, 25.00, 33.33, as indicated, and (b) as a function of
the spectral separation ∆ε between the QDs for different values of the pulse bandwidth, σ/ωe = 0.01, 0.02, ..., 0.1, 0.15, ..., 0.3
as indicated by the dashed arrow. Each point is computed for the optimal value of ω0 from Fig. 2(a). The vertical lines mark
the values of ω2 from panel (a). In both panels (a) and (b) we used g/ωe = 3.33 and ωh = ωe/3.
FIG. 3: (a) Fidelity of the two-qubit CZ gate in presence of decoherence due to trion recombination and cavity decay. The
fidelity is plotted as the function of the trion decay time and the cavity mode quality factor. (b) The temporal profiles of the
pulse sequence for σ/ωe = 0.2, ωh = ωe/3, ∆ε/ωe = 8.33, g/ωe = 3.33, and ωe = 0.12meV.
the fidelity is plotted as a function of the difference be-
tween the cavity mode frequency ω0 and the transition
frequency of QD1 ε1 for varying values of the frequency
of QD2 ε2. The qualitative features of the plots can be
understood as follows: when the cavity mode frequency
is much smaller or much larger than the QD frequencies,
QD-cavity hybridization is negligible, and we are in a
regime of two independent qubits. This causes attenua-
tion of fidelity towards both sides of the plot. The dip
in the middle occurs because, as the cavity is tuned, the
target transition of pulse B (transition 4-16) becomes de-
generate with transition 3-11, and therefore state ↓↓(cid:105) is
also affected by pulse B, resulting in strong unintended
dynamics. Note that at its high values the fidelity does
not vary strongly with ε1 and ε2. As a result, gates be-
tween several different pairs of quantum dot spin qubits
can be performed with high fidelity using only one cavity
mode to mediate the interactions, which is an intriguing
opportunity for scalable architectures.
Fig. 2(b) shows the fidelity as a function of the spectral
separation ∆ε between the trions in QD1 and in QD2 for
different pulse bandwidths σ. When ∆ε is small (com-
parable to ωe) the fidelity drops appreciably. This drop
is the result of coupling in the 'one-excitation' subspace,
i.e., the assumption that an excited QD is isolated from
the rest of the system is no longer valid. Thus it also
identifies the regime where fast optical single-qubit con-
trol is not possible.
In the region of higher fidelities,
where ∆ε/ωe >∼ 10, the fidelity approaches its maximal
value for longer pulses and starts decreasing more rapidly
for σ/ωe >∼ 0.2 due to involvement of a larger number of
unintended transitions.
Next, we consider the effects of decoherence due to
losses during the gate. The main contributions come
from trion recombination and cavity photon leakage. The
typical linewidth of the trion state, Γtr, in InAs QDs is
∼ 1µeV.26 The loss rate associated with the cavity is
Γc = ω0/Q. State-of-the-art microcavities15 can have Q's
up to ∼ 105, which gives Γc ∼ 10µeV. We calculate the fi-
delity using the standard master equation formalism21,27
and include states from 0 to 19, see Appendix B. The
fidelity as a function of Q and 1/Γtr in shown in Fig. 3.
It is maximized when the pulses overlap to reduce the
time the excited states are occupied. We choose ω0 from
the maximal fidelities, as in Fig. 2(a) for each point of
Fig. 3. We see that fidelities in excess of 90% are possible
for realistic values of the parameters.
2510200.60.70.80.91.0(a)(b)0102030400.30.40.50.60.70.80.91.08.3316.6725.0033.33050100150200250arb.u.(a)(b) VI. CONCLUSIONS
In summary, we have developed a design for a cavity-
mediated entangling gate between two spin qubits that
satisfies the criteria for a realistic two-qubit operation.
Our control-z gate is compatible with available single
qubit operations and with natural inhomogeneities in op-
tical resonances. It can thus accommodate several qubits
that couple pairwise with appropriate control laser fre-
quencies, opening a path to scalable architectures.
It
may also be useful for hybrid quantum computing ap-
proaches with various physical systems.28 We have shown
that the gate fidelity is at least 90% for current experi-
mental parameters. Higher fidelities can be achieved in
various ways such as using pulse shaping techniques29,30
and engineering higher finesse cavities.
VII. ACKNOWLEDGEMENTS
This work was supported in part by NSA/LPS and in
part by ONR.
Appendix A: The spectrum
In the rotating wave approximation the Hamiltonian
[Eq. (1) from the main text] conserves the total number
of excitations. Therefore it can be diagonalized indepen-
dently in each excitation-number subspace. The lowest
energy set of four states (three energy levels) corresponds
to a subset with zero excitations. It represents the two-
qubit subspace with zero cavity photons,
0 → ↑↑(cid:105)0(cid:105), 1 → ↑↓(cid:105)0(cid:105), 2 → ↓↑(cid:105)0(cid:105), 3 → ↓↓(cid:105)0(cid:105), (A1)
where 0(cid:105) is the vacuum state of the cavity. The corre-
sponding energies are controlled by the magnetic field via
Zeeman splitting. For typical values of magnetic field of
∼ 1 T used in the initialization and readout and single-
qubit experiments the splitting between E0,E3 and E1,2
is ∼ 0.1 meV. The micro-cavity optical mode is coupled
to the excitonic transitions in each quantum dot with the
transition energies ∼ eV. As a result, the qubit subspace
is not affected by the cavity.
quency, ∼ eV from the qubit subspace energies:
⇑↑(cid:105)0(cid:105),⇓↑(cid:105)0(cid:105),⇑↓(cid:105)0(cid:105),⇓↓(cid:105)0(cid:105),
↑⇑(cid:105)0(cid:105),↑⇓(cid:105)0(cid:105),↓⇑(cid:105)0(cid:105),↓⇓(cid:105)0(cid:105),
↑↑(cid:105)1(cid:105),↑↓(cid:105)1(cid:105),↓↑(cid:105)1(cid:105),↓↓(cid:105)1(cid:105),
(A2)
(A3)
(A4)
where 1(cid:105) denotes the state with a single photon in the
cavity. The energy gap ∆ε between states (A2) and (A3)
is due to the fact that the two dots are not identical in
size, shape, and strain environment, which affects the
excitonic transitions. The typical variation in trion tran-
sition energies is ∼ 1− 20 meV. The energy of the cavity
The one-excitation subspace occurs at the optical fre-
dot 1 :
dot 2 :
cavity :
5
mode, ω0, is fixed during the gate operation but can be
set to an optimal value during sample growth. The in-
teraction with a cavity photon shifts the energies and
mixes trion and photon states. The energies of the re-
sulting states can be found analytically: note that states
(A2-A4) are always coupled in triplets. For example, the
state ↑↑(cid:105)1(cid:105) interacts only with ⇑↑(cid:105)0(cid:105) and ↑⇑(cid:105)0(cid:105). For
each triplet we have
(E−ε1,ξ)(E−ε2,ξ)(E−ω0) = g2(E−ε1,ξ)+g2(E−ε2,ξ),(A5)
where ξ =↑ or ↓, εn,↑ = εn and εn,↓ = εn + ωh − ωe.
Each triplet forms two anti-crossings when ω0 is swapped
across the trion energies [see Fig. 1(b) and Fig. 1(d) of
the main text]. When g ∼ ∆ε or g (cid:29) ∆ε, the two excited
quantum dot states can mix and form spin-entangled
states. For experimentally accessible systems of quantum
dots in a micro-cavity the coupling strength g is substan-
tially smaller than the variation in trion energies ∆ε and
the mixing is negligible. In the limit g (cid:28) ∆ε the interac-
tion between one-excitation states from different QDs can
be estimated by analyzing the difference δω↑ in transition
energies between ω↑ : ↑↑(cid:105) → ⇑↑(cid:105) and ω(cid:48)
↑ : ↑↓(cid:105) → ⇑↓(cid:105).
From Eq. (A5) we find ω↑ = ε + g2/f (ωA, ∆ε) and
A, ∆ε + ωe − ωh), where f (y, x) =
ω(cid:48)
↑ = ε + g2/f (ω(cid:48)
x − ω0 − g2/(x − ε + y). Since ωe ∼ ωh ∼ g (cid:28) ∆ε it
is easy to show that δω↑ <∼ −g2ωe/∆ε2. This should be
compared to the typical inverse lifetime of the trion state,
∼ 1µeV (in energy units) or ∼ ωe/100. As a result for
ωe/∆ε ∼ 10, ω↑ and ω(cid:48)
↑ are practically indistinguishable.
This result is confirmed numerically by computing the
spectrum (and the states) for different values of ∆ε. It
also holds for other transitions between the qubit and the
one-excitation subspace states. Therefore we conclude
that the one excitation subspace cannot be used for a
two-qubit operations. It can, however, be used to per-
form fast single qubit operations as described in Ref. 23
by using the localized trion state.
In order to find useful non-local states that can mediate
a two-qubit gate we investigate the two-excitation sub-
space. In this subspace the states are coupled in groups
of four, e.g. ⇑⇑, 0(cid:105), ⇑↑, 1(cid:105), ↑⇑, 1(cid:105), ↑↑, 2(cid:105):
(ε2,ξ +ε1,ξ−E)(ω+ε1,ξ−E)(ω0 +ε2,ξ−E)(2ω−E)(A6)
= g2(ε2,ξ +ε1,ξ +2ω0−2E)2.
The spectrum has a more complex structure, see Fig. 1(c)
of the main text. The two-excitations subspace provides
non-local quantum-dot-cavity states, such as state 16,
which has two trions (one in each dot). The energy of
such state is different from the combined energy of two
trion states localized in each dot, such as E4 and E8,
∆E16,4 (cid:54)= ∆E4,0 + ∆E8,0
(A7)
where ∆En,n(cid:48) = En − En(cid:48). This is the basis for the
two-qubit conditional phase gate in this work. Us-
ing a perturbative approach like that above, we obtain
∆E16,4 − (∆E4,0 + ∆E8,0) ∼ −g2/∆ε.
Appendix B: Gate Fidelity
The fidelity of the gate described in the main text is
affected by two type of processes: (i) induced unintended
transitions between the states of the qubit-cavity system
and (ii) real losses due to cavity leakage and trion re-
combination. We first estimate losses due to unintended
but coherent dynamics. We include transitions 0-4, 4-6,
2-5, 3-7, 0-8, 2-10, 1-9, 3-11 for pulse A, and 4-16, 6-18,
0-8, 2-10, 1-9, 3-11 for pulse B (ωB). Other transitions
are negligible either due to vanishing matrix elements or
to large detuning. We compute the wave function after
the A-B-A pulse sequence for each basis configuration of
the qubit subspace as initial state (evolution is linear and
therefore the resultant wave function for any initial qubit
state can be easily recovered). To simplify calculations
here we resort to analytically solvable Rosen-Zener pulse
shapes,31 i.e. Ωp(t) = Ωpsech(σpt) with σA = 2σB = 2σ,
to calculated transition amplitudes and phases for reso-
nant and off-resonance transitions for each pulse. Given
the initial, ψ0(cid:105), and final, ψ(cid:105) = Uψ0(cid:105), wave function,
the fidelity can be computed as
F (ψ0, ψ) = (cid:104)ψ0U
†
CZψ(cid:105)
(B1)
†
where U
CZ is the evolution operator corresponding to
the ideal CZ gate. The value of F (ψ0, ψ) depends on the
initial state of the two-qubit system and therefore can
vary depending on the choice of algorithm and initial
data. We therefore compute the average fidelity F by
taking average over all possible initial states of the two-
qubit system,
F 2 =
dψ0F (ψ0, ψ{ψ0})2
δinδjm + δijδnm
(B2)
†
CZUi(cid:105)(cid:104)jU†UCZm(cid:105)
(cid:104)nU
=
20
ijnm
The integration(cid:82) dψ0 is performed over all complex am-
plitudes that define the initial state in the basis i(cid:105), and
i, j, n, m run over all basis states ↑↑,↑↓,↓↑,↓↓.32 The re-
sults are presented in Fig. 2 and the discussion is given
in the main text.
In order to account for both unintended dynamics and
actual losses we have to calculate the reduced density
matrix, ρ(t), of the two-qubit sub-system for the duration
of the pulse sequence. The reduced density matrix can be
found within the Bloch-Redfield master-equation (ME)
formalism
(cid:20)
(cid:88)
s
i ρ = [H + V (t), ρ]
PsρP †
iΓs
+
s − P †
s Psρ + ρP †
s Ps
2
(cid:21)
(B3)
(cid:90)
(cid:88)
6
where Ps = fs(cid:105)(cid:104)is, is(cid:105) and fs(cid:105) are initial and finial
states (in the spin basis) corresponding to the s-th de-
cay process with rate Γs. Solving the above equation
directly is computationally involving due to the presence
of two different time scales:
fast, associated with the
laser driving frequency, and slow, coming from the time-
dependence of the pulse shaped envelope. To simplify
the computation we transform the ME to the eigenbasis
of H and use the rotating wave approximation,
(cid:20)
(cid:88)
ρ = −i[V (t), ρ]
Ps ρP†
Γs
+
s
s − P†
sPs ρ + ρP†
sPs
2
(cid:21)
,
(B4)
where ρ = eiH0tU†ρU e−iH0t, Ps = U†PsU and
V (t) = eiH0tV(t)e−iH0t. Note that the trion decay pro-
cesses can involve photons with any in-plane polariza-
tion (along or perpendicular to the applied magnetic
for each trion we have Γs = Γtr:
field). Therefore,
Ps → {↑(cid:105)(cid:104)⇑,↓(cid:105)(cid:104)⇑,↑(cid:105)(cid:104)⇓,↓(cid:105)(cid:104)⇓}.
Leakage of pho-
tons from the cavity is modeled as Γs = Γc: Ps →
21(cid:105)(cid:104)2, etc.}. Due to additional (pseudo)spin-
{0(cid:105)(cid:104)1,
flip electron-hole recombination processes, more states
are involved than for the coherent case discussed above
and we include states from 0 to 19. We chose to use Gaus-
p/π2}
for numerical convenience and apply the same pulse se-
quence as before with σA = 2σB = 2σ.
sian pulse shapes Ωp(t) = (Ωp/(cid:112)π/2) exp{−2t2σ2
√
Since a separable quantum wave function is no longer
accessible, fidelity has to be defined differently,
F (ψ0, ρ{ψ0}) =
(cid:104)ψ0U
†
CZ ρ UCZψ0(cid:105)
(B5)
(cid:113)
In this case the average fidelity is computed as
δinδjm + δijδnm
(cid:104)nU
†
CZρ{i(cid:105)(cid:104)j}UCZm(cid:105) (B6)
F 2=
ijnm={1,4}
20
(cid:88)
which is the generalization of Eq. (B2) for the case of
non-unitary evolution of pure initial state. This is possi-
ble due to the fact that the evolution of the density ma-
trix is still described by a linear (but non-unitary) super-
operator, i.e. ρ(t) = T exp(−i(cid:82) t
0 dtLH (t) − tL)ψ0(cid:105)(cid:104)ψ0,
where LH O = [H, O]. As a result, the complex coef-
ficients that define initial (ψ0(cid:105)) and target (UCZψ0(cid:105))
states in the basis i(cid:105) can be integrated out in exactly
the same way as for Eq. (B2). The results are presented
in Figs. 2 and 3 in the main text.
∗ sophia.economou@nrl.navy.mil
1 T. D. Ladd, F. Jelezko, R. Laflamme, Y. Nakamura, C.
Monroe, and J. L. OBrien, Nature (London) 464, 45-53
(2010).
2 J. D. Sterk, L. Luo, T. A. Manning, P. Maunz, C. Monroe,
arXiv:1112.4489 (2011).
3 D. Englund, B. Shields, K. Rivoire, F. Hatami, J. Vuckovic,
H. Park, and M. D. Lukin, Nano Lett. 10, 39223926 (2010).
4 A. Faraon, P. E. Barclay, C. Santori, K-M. C. Fu, and
Raymond G. Beausoleil, Nature Photonics 5, 301 (2011).
5 J. P. Reithmaier, G. Sek, A. Lffler, C. Hofmann, S. Kuhn,
S. Reitzenstein, L. V. Keldysh, V. D. Kulakovskii, T.
L. Reinecke, and A. Forchel, Nature (London) 432, 197
(2004).
6 D. Press, T. D. Ladd, B. Zhang, and Y. Yamamoto, Nature
(London) 456, 218 (2008).
7 A. Greilich, S. E. Economou, S. Spatzek, D. R. Yakovlev,
D. Reuter, A. D. Wieck, T. L. Reinecke, and M. Bayer,
Nature Physics 5, 262 (2009).
8 T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H.
M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G.
Deppe, Nature (London) 432, 200 (2004).
9 A. Badolato, K. Hennessy, M. Atature, J. Dreiser, E. Hu,
P. M. Petroff, and A. Imamoglu, Science 308, 1158 (2005).
10 G. Khitrova, H. M. Gibbs, M. Kira, S. W. Koch, and A.
Scherer, Nature Physics 2, 81 (2006).
11 K. Hennessy, A. Badolato, M. Winger, D. Gerace, M.
Atature, S. Gulde, S. Falt, E. L. Hu, and A. Imamoglu,
Nature (London) 445, 896 (2007).
12 D. Pinotsi, P. Fallahi, J. Miguel-Sanchez, and A.
Imamoglu, IEEE J. Quant. El. 47, 1371, (2011).
13 S. M. Thon, H. Kim, C. Bonato, J. Gudat, J. Hagemeier, P.
M. Petroff, and D. Bouwmeester, arXiv:1109.5016 (2011).
14 E. Gallardo, L. J. Martinez, A. K. Nowak, D. Sarkar, H.
P. van der Meulen, J. M. Calleja, C. Tejedor, I. Prieto, D.
Granados, A. G. Taboada, J. M. Garcia, and P. A. Postigo,
Phys. Rev. B 81, 193301 (2010).
15 S. Reitzenstein, C. Hofmann, A. Gorbunov, M. Strau, S.
H. Kwon, C. Schneider, A. Lffler, S. Hfling, M. Kamp, and
A. Forchel, Appl. Phys. Lett. 90, 251109 (2007).
7
16 S. G. Carter, T. M. Sweeney, M. Kim, C. S. Kim, D.
Solenov, S. E. Economou, T. L. Reinecke, L. Yang, A. S.
Bracker, D. Gammon, arXiv:1211.4540
17 D. Kim, S. G. Carter, A. Greilich, A. S. Bracker and D.
Gammon, Nature Physics 7, 223 (2011); A. Greilich, S. G.
Carter, D. Kim, A. S. Bracker and D. Gammon, Nature
Photonics 5, 702708 (2011).
18 J-Q Zhang, Y-F Yu, and Z-M Zhang, J. Opt. Soc. Am. B
28, 1959 (2011).
19 T. D. Ladd and Y. Yamamoto, Phys. Rev. B 84, 235307
(2011).
20 A. Imamoglu, D. D. Awschalom, G. Burkard, D. P. Di-
Vincenzo, D. Loss, M. Shermin, and A. Small, Phys. Rev.
Lett. 83, 4204 (1999).
21 M. A. Nielsen and I. L. Chuang, Quantum Computation
and Quantum Information (Cambridge University Press,
Cambridge, UK, 2000).
22 M. Notomi, Rep. Prog. Phys. 73 (2010).
23 S. E. Economou, L. J. Sham, Y. Wu, and D. G. Steel,
Phys. Rev. B 74, 205415 (2006); S. E. Economou and T.
L. Reinecke, Phys. Rev. Lett. 99, 217401 (2007).
24 This assumption is not crucial and can be easily relaxed to
accommodate pulses with other polarizations.
25 S. E. Economou and T. L. Reinecke, Phys. Rev. B 78,
115306 (2008).
26 S. Cortez, O. Krebs, S. Laurent, M. Senes, X. Marie,
P. Voisin, R. Ferreira, G. Bastard, J-M. Gerard, and T.
Amand, Phys. Rev. Lett. 89, 207401 (2002).
27 D. Solenov, D. Tolkunov, and V. Privman, Phys. Rev. B
75, 035134 (2007).
28 E. Waks and C. Monroe, Phys. Rev. A 80, 062330 (2009).
29 J. P. Palao and R. Kosloff, Phys. Rev. Lett. 89, 188301
(2002).
30 S. E. Economou, Phys. Rev. B 85, 241401(R) (2012).
31 N. Rosen and C. Zener, Phys. Rev. 40, 502 (1932).
32 L. H. Pedersena, N. M. Møller, K. Mølmer, Phys. Lett. A
367, 47 (2007).
|
1201.1690 | 1 | 1201 | 2012-01-09T05:33:41 | A topological look at the quantum spin Hall state | [
"cond-mat.mes-hall"
] | We propose a topological understanding of the quantum spin Hall state without considering any symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum gap needs to close on the system edges, the former scenario generally resulting in counterpropagating gapless edge states. Based upon the Kane-Mele model with a uniform exchange field and a sublattice staggered confining potential near the sample boundaries, we demonstrate the existence of such gapless edge states and their robust properties in the presence of impurities. These gapless edge states are protected by the band topology alone, rather than any symmetries. | cond-mat.mes-hall | cond-mat |
A topological look at the quantum spin Hall state
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Huichao Li, L. Sheng,∗ and D. Y. Xing
We propose a topological understanding of the quantum spin Hall state without considering any
symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum
gap needs to close on the system edges, the former scenario generally resulting in counterpropagating
gapless edge states. Based upon the Kane-Mele model with a uniform exchange field and a sublattice
staggered confining potential near the sample boundaries, we demonstrate the existence of such
gapless edge states and their robust properties in the presence of impurities. These gapless edge
states are protected by the band topology alone, rather than any symmetries.
PACS numbers: 72.25.-b, 73.20.At, 73.22.-f, 73.43.-f
Since the remarkable discovery of the quantum Hall
effect (QHE) [1], the study of edge state physics has
attracted much attention on both theoretical and ex-
perimental sides. Recently, a new class of topological
states of matter has emerged, called the quantum spin
Hall (QSH) states [2, 3]. A QSH state of matter has a
bulk energy gap separating the valence and conduction
bands and a pair of spin-filtered gapless edge states on
the boundary. The QSH effect was first predicted in two-
dimensional (2D) models [2, 3], and was experimentally
confirmed soon after in mercury telluride quantum wells
[4]. The QSH systems are 2D topological insulators [5, 6]
protected by the time-reversal symmetry (TRS), whose
edge states are robust against perturbations such as non-
magnetic disorder.
A simple model of the QSH systems is the Kane-Mele
model [2], defined on a honeycomb lattice, first intro-
duced for graphene with spin-orbit couplings (SOCs). It
was suggested [2] that the intrinsic SOC in graphene
would open a band gap in the bulk and also establish
spin-filtered edge states that traverse the band gap, giv-
ing rise to the QSH effect. Even though the intrinsic SOC
strength in pure graphene is too small to produce an ob-
servable effect under realistic conditions [7], the Kane-
Mele model captures the essential physics of the QSH
state with nontrivial band topology [8, 9]. In the pres-
ence of the Rashba SOC and an exchange field, the Kane-
Mele model enters a TRS-broken QSH phase [10] charac-
terized by nonzero spin Chern numbers [11, 12]. Prodan
proved [12] that the spin-Chern numbers are topological
invariants, as long as the energy gap and the spectrum
gap of the projected spin operator P σzP stay open in the
bulk, where P is the projection operator onto the sub-
space of the occupied bands and σz the Pauli matrix for
the electron spin. Unlike the Z2 invariant [13], the robust
properties of the spin-Chern numbers remain unchanged
when the TRS is broken [10, 12].
The existence of counterpropagating edge states with
opposite spin polarizations is an important characteristic
of the QSH state. It is believed that the edge states can
be gapless only if the TRS [2] or other symmetries, such
as the inversion symmetry [14] or charge-conjugation
TRS [15], are present. When the TRS is broken, it was
found [10] that a small gap appears in the spectrum of
the edge states, which was obtained for a ribbon geome-
try under ideal boundaries, i.e., boundaries created by an
infinite hard-wall confining potential. However, since the
edge states are localized around the sample boundaries,
they can be sensitive to the variation of on-site potentials
near the boundaries [16].
In this Letter, in order to reveal the general character-
istics of the edge states and their connection to the bulk
topological invariant in a QSH system, we present a topo-
logical argument similar to the Laughlin's Gedanken ex-
periment without considering any symmetries. We show
that, as required by the nontrivial band topology and
gauge invariance, either the energy gap or the spin spec-
trum gap (the gap in the spectrum of P σzP ) needs to
close on the edges of a QSH system. These two scenarios
will lead to gapless or gapped edge modes, respectively.
In particular, it is demonstrated that gapless edge states
can appear in a TRS-broken QSH system by tuning the
confining potential at the boundaries. They are associ-
ated with the bulk topological invariant, and are robust
against relatively smooth impurity scattering potential.
Our result offers an interesting example for counterpropa-
gating gapless edge states that are not protected by sym-
metries, which sheds light on the underlying mechanism
of the QSH effect in a broad sense.
Let us first look back on a looped ribbon of the QHE
system, with a magnetic flux φ (in units of flux quantum
hc/e) threading the ring adiabatically [17 -- 19]. The Fermi
energy EF is assumed to lie in an energy gap.
In the
spirit of the Laughlin's argument, increasing φ from 0
to 1 effectively pumps one occupied state from one edge
to the other, giving rise to the transfer of one charge
between the edges, essentially because there is a nonzero
Chern number (Hall conductivity) in the bulk. On the
other hand, the system Hamiltonian is gauge invariant
under integer flux changes, i.e., if φ is increased from 0
to 1, the system will reproduce the same eigenstates as
at φ = 0. To assure this gauge invariance, there must
be gapless edge modes on the edges (when the perimeter
of the ring is large), so that the spectral flow can form
a closed loop, as illustrated in Fig. 1a, along which the
electron states can continuously move with changing φ.
(a)
(b)
(c)
EF
Conduction bands
Valence bands
Conduction bands
Valence bands
Left edge
Right edge
FIG. 1: (a) A schematic of the flow of electron states in a
looped ribbon of the QHE system, with adiabatically increas-
ing the magnetic flux φ that threads the ring. The bulk elec-
tron states below Fermi energy EF drift from left to right,
gapless edge modes ascend through EF on the right edge,
states above EF drift from right to left, and gapless edge
modes descend through EF on the left edge, forming a closed
loop. (b) In the first scenario for the QSH system, gapless
edge modes appear on the edges of the ring, so that electron
states in each spin sector behave like in the QHE system, but
those in two spin sectors move in opposite directions. (c) In
the second scenario for the QSH system, the edge states are
gapped, whereas the spin spectrum gap closes on the edges.
In the bulk, electron states in the two spin sectors drift in
the same way as in (b), but on the edges they join together
within the valence (conduction) band.
We now propose a topological understanding of the
QSH system in terms of the same looped ribbon geom-
etry. The occupied valence band can be decomposed
into two spin sectors by using the projected spin oper-
ator [10, 12]. (The unoccupied conduction band can be
divided similarly.) The two spin sectors are separated by
a nonzero spin spectrum gap in the bulk. They carry op-
posite spin Chern numbers, so that increasing φ pumps a
state of the spin up sector in the occupied band from one
edge to the other, and pumps another state of the spin
down sector in the opposite direction. In order for the
system to recover the initial eigenstates as φ changes from
0 to 1, the spectral flow needs to form closed loops, simi-
larly to the QHE system. However, for the QSH system,
if not enforced by any symmetry, two different scenarios
can occur on the edges. One is that gapless edge modes
appear on the edges, so that states can move between the
conduction and valence bands with changing φ to form
closed loops in the spin-up and spin-down sectors sepa-
rately, as shown in Fig. 1b. In this case, the states in the
two loops cannot evolve into each other due to the non-
vanishing spin spectrum gap both in the bulk and on the
edges. The other scenario is that a closed loop of spec-
tral flow is formed between the two spin sectors within
2
the valence (or conduction) band, as shown in Fig. 1c.
In this case, the spin spectrum gap must vanish on the
edges, but the energy gap may remain open in the edge
state spectrum.
(b)
abrupt potential
smooth potential
(a)
s
e
g
d
e
r
i
a
h
c
m
r
a
zigzag edges
FIG. 2: (a) A schematic of an armchair honeycomb lattice
ribbon with atom sites in two sublattices being labeled by
solid dots and hollow dots, where a is the distance between
nearest-neighbor sites. (b) Profiles of Vi as functions of xi,
for an abrupt confining potential (dashed line) and a relatively
smooth confining potential (solid line).
The above topological discussion on the QSH system is
very general, independent of any symmetries. To demon-
strate the two scenarios in Figs. 1b and 1c, in what follows
we take the Kane-Mele model [2] for a honeycomb lattice
ribbon as an example, by taking into account different
confining potentials near the edges of the ribbon. It was
shown that in a suitable parameter range, the Kane-Mele
system is in the QSH phase protected by the TRS, and it
can become a TRS-broken QSH phase [10], when a spin-
splitting exchange field is applied. Consider an armchair
ribbon along the y direction, as shown in Fig. 2a, in-
cluding Nx dimer lines across the ribbon. (Results for a
zigzag ribbon are similar.) The boundaries are at x1 = 0
√3
and xNx =
2 (Nx − 1), where the distance between
nearest-neighbor sites is chosen as the unit of length. The
Hamiltonian can be written as H = HKM + HE + HC
with
2i
√3
HKM = −tXhiji
+ iVRXhiji
c†i cj +
VSO Xhhijii
c†i ez · (σ × dij)cj,
c†i
σ · (dkj × dik)cj
(1)
, c†i↓
as the Hamiltonian of the Kane-Mele model. Here, the
first term is the nearest-neighbor hopping term with c†i =
(c†i↑
) as the electron creation operator on site i and
the angular bracket in hi, ji standing for nearest-neighbor
sites. The second term is the intrinsic SOC with coupling
strength VSO, where σ are the Pauli matrices, i and j are
two next nearest neighbor sites, k is their unique common
nearest neighbor, and vector dik points from k to i. The
third term is the Rashba SOC with coupling strength
VR. HE = gPi c†i σzci stands for a uniform exchange
field of strength g. HC represents a sublattice staggered
confining potential, which is given by HC = Pi Vic†i ci
with
Vi = ±V0(cid:18)e− xi
ξ + e−
xNx −xi
ξ (cid:19) ,
(2)
where ± is taken to be positive for sites on sublattice A
(solid dots) and negative on sublattice B (hollow dots),
as shown in the Fig. 2a. In Eq. (2), Vi is strongly x depen-
dent across the ribbon, equal to ±V0 at the edges (xi = 0
and xi = xNx ). It decays exponentially away from the
edges, with a characteristic length ξ, as shown in Fig.
2b. When the ribbon width is much greater than ξ, Vi
essentially vanishes in the middle region of the ribbon.
Here, we note that in the case of a uniform staggered
potential Vi = ±V0 (Vi being independent of xi), it was
shown [10] that with increasing Vi, there is a transition
from the TRS-broken QSH phase to an ordinary insu-
lator state, where the middle band gap closes and then
reopens. Therefore, for the confining potential Vi given
by Eq. (2) with large V0, the ribbon in Fig. 2 can be
regarded as a TRS-broken QSH ribbon sandwiched in
between two trivial band insulators.
0.2
0.0
(a)
R↓
L↑
R↑
L↓
(b)
R↓ L↑
R↑ L↓
-0.4
-0.2
0.0
(π)
y
3k
0.2
0.4
-0.2
0.0
(π)
y
3k
FIG. 3: (color online) The energy spectrum (a, b) and the
spectrum of the projected spin P σzP (c, d) of an armchair
ribbon for ξ = 0.1 (a, c) and ξ = 4 (b, d), in which L (R)
stands for states on the left (right) edge, and ↑ (↓) for the up
(down) spin polarization. The horizontal arrows in (a) point
to the small energy gaps in the energy spectrum. At ξ = 0.1,
while the energy spectrum (a) is gapped, the spin spectrum
(c) is gapless. At ξ = 4, the energy spectrum (b) is gapless,
but the spin spectrum (d) is gapped.
In order to assure the system in the TRS-broken QSH
state, we set the parameters Vso = 0.1t, VR = 0.1t,
and g = 0.1t. The length of the armchair ribbon Ny is
taken to be infinite. The energy spectrum of the ribbon,
together with the corresponding eigenfunctions ϕm(ky),
can be numerically obtained by diagonalizing the Hamil-
tonian for each momentum ky in the y direction. The
calculated energy spectrum of the armchair ribbon with
width Nx = 240, for the confining potential with V0 = 12t
x=0.1
-0.2
-0.4
1.0
0.5
0.0
(c)
x=0.1
)
t
(
y
g
r
e
n
E
m
u
r
t
c
e
p
s
n
p
S
i
-0.5
-1.0
x=4.0
(d)
x=4.0
0.2
0.4
3
fixed and two different decay lengths, is plotted in Fig.
3a and Fig. 3b. One can see easily that the edge states
appear as thin lines in the middle bulk band gap of the
energy spectrum. In Figs. 3a and 3b, the spin polariza-
tion of the edge states is labeled with ↑ and ↓, indicating
that two spin-filtered channels on each edge flow along
opposite directions. For the nearly hard-wall confining
potential of ξ = 0.1, the sublattice potential Vi is nonzero
only on the outermost armchair lines, similar to the as-
sumption in Ref. [16].
In this case, two small energy
gaps are observed in the edge state spectrum shown in
Fig. 3a, in agreement with the previous observation [10],
as a consequence of the broken TRS. With increasing the
decay length ξ of the confining potential, the energy gaps
of the edge states become smaller and smaller. As ξ is
large enough, e.g., ξ = 4 in Fig. 3b, interestingly, the
edge states become gapless.
We now calculate the ky-dependent spectrum of pro-
jected spin operator P σzP , whose matrix elements are
given by hϕm (ky) σz ϕn (ky)i with m and n running over
all the occupied states. By diagonalizing this matrix, the
spectrum of the projected spin P σzP can be obtained.
For the Kane-Mele model Eq. (1), if VR = 0, σz com-
mutes with the Hamiltonian H. Therefore, σz is a good
quantum number. It follows that the spectrum of P σzP
consists of just two values ±1, which are highly degen-
erate. When the Rashba term is turned on, σz and H
no longer commute, and the degeneracy is lifted. In this
case, the spectra of P σzP between +1 and −1 spread
towards the origin, but a gap remains for a bulk sample
if the amplitude of the Rashba term dose not exceed a
threshold [12].
For the ribbon geometry, the situation is more compli-
cated due to the existence of the edges, and numerical
calculations are performed to obtain the spin spectrum.
The calculated spectrum of P σzP for the same param-
eters as those in Figs. 3a and 3b is shown in Figs. 3c
and 3d, which exhibits very interesting behavior. For
the hard-wall confining potential with ξ = 0.1, while the
energy spectrum of edge states are slightly gapped, with
increasing ky the spectrum of P σzP continuously change
between +1 to −1 without showing any gap, correspond-
ing to the second scenario shown in Fig. 1c. On the
other hand, for a relatively smooth confining potential
with ξ = 4.0, the energy spectrum of the edge states are
gapless, but the spectrum of P σzP displays a big gap,
and the sudden changes happen at the cross points in
the energy spectrum of the edge states, corresponding to
the first scenario shown in Fig. 1b. From Fig. 3, it follows
that as long as the system is in the QSH state, a gapless
characteristic always appears either in the energy spec-
trum of edge states or in the spectrum of P σzP , leading
to the two types of closed loops for the continuous flow
of the electron states illustrated in Figs. (1b, 1c).
The result shown in Figs. 3b and 3d, for the relatively
smooth confining potential, is of particular interest. It
indicates that gapless edge states can exist in the TRS-
broken QSH system, accompanied with a gapped spec-
trum of P σzP . Such an interesting behavior can be fur-
ther understood by the following argument. As long as
the bulk energy gap does not close, the projected spin op-
erator P σzP is exponentially localized in real space with
a characteristic length about λ ∼ ¯hvF /∆E, where vF is
the Fermi velocity and ∆E is the magnitude of the energy
gap. [12] For the parameter set used in Fig. 3, λ is esti-
mated to be between 1 to 2 lattice constants. When the
confining potential Vi is varying relatively slowly in space,
i.e., ξ ≫ λ, one can find that P σzP roughly commutes
with the confining potential. In this case, the confining
potential is of no influence on the spectrum of P σzP .
Since the spin spectrum has a gap in the bulk [10], this
gap remains to open on the smooth edges, as seen from
Fig. 3d. As a result, the energy gap has to close due
to the topological requirement, resulting in gapless edge
modes, as observed in Fig. 3b.
(a)
l
= 1.0
0
U
= t
0
0.1
)
t
(
y
g
r
e
n
E
0.0
-0.1
0.0
0.5
(b)
(c)
l
= 3.0
0
= t
U
0
0.2
0.1
0.0
0.0
Magnetic flux φ
0.5
1.0 0.0
l
= 3.0
0
U
= 3t
0
1.0
0.5
FIG. 4: (color online) Eigenenergies of the edge states as a
function of the magnetic flux φ threading the looped geometry
with size 120×60 for (a) l0 = 1.0, U0 = t, (b) l0 = 3.0, U0 = t,
and (c) l0 = 3.0, U0 = 3t, where the impurity concentration
is fixed at 1%. The other parameters are taken to be VSO =
VR = g = 0.1t, V0 = 12t, and ξ = 4. Arrows in (a) indicate
some of the relatively large energy gaps.
Finally, we wish to discuss the robustness of the gap-
less edge states found in the present TRS-broken QSH
system. We consider a Nx × Ny sample forming a looped
geometry as that shown in Fig. 1. NI nonmagnetic im-
purities are assumed to be randomly distributed in the
sample at positions Rα with α = 1,··· NI . An extra
term HI = Pi wic†i ci is added to the total Hamiltonian
H to describe the effect of the impurity scattering, where
wi = Pα U (ri − Rα) with ri as the position of the i-th
atom site. The impurity scattering potential is taken to
be U (ri−Rα) = (U0/l2
0) exp(−ri−Rα/l0) with l0 as the
correlation length and U0 the strength of the scattering
potential. By inclusion of 1/l2
0 in the prefactor, the area
integral of the impurity potential is set to be indepen-
4
dent of l0. Figure 4 shows the evolution of the calculated
eigenenergies of a 120 × 60 system in the band gap upon
adiabatic insertion of a magnetic flux φ into the ring, for
three different impurity scattering potentials. The num-
ber concentration of the impurities is fixed at 1%. For
a very short correlation length l0 = 1, for which the im-
purity potential is nearly uncorrelated from one site to
another, we see from Fig. 4a that at U0 = t, the energy
levels of the edge states avoid to cross each other as they
move close, resulting in small energy gaps in the spec-
trum, as indicated by the arrows. This level repulsion
behavior is a signature of the onset of backward scatter-
ing [11]. When the characteristic length l0 is increased
to l0 = 3 with U0 = t fixed, corresponding to a relatively
smooth impurity scattering potential, all the energy gaps
vanish, as shown in Fig. 4b. The energy levels move in
straight lines and continue to cross each other, a clear
indication of quenching of the backward scattering [11].
Such a level crossing feature is intact when U0 is increased
up to 3t for fixed l0 = 3, as shown in Fig. 4c. We thus
conclude that the edge states remain to be robust in the
presence of relatively smooth impurity scattering poten-
tial of intermediate strength. This result can be under-
stood based upon an argument similar to that in the pure
case. When l0 is greater than the characteristic length λ
of the projected spin operator P σzP , the impurity scat-
tering potential nearly commutes with P σzP , and hence
does not affect much the spin spectrum gap, so that the
energy gap needs to close on the edges, which explains
the level crossing behavior of the edge modes.
In summary, based upon a general topological argu-
ment without relying on the TRS or other symmetries,
we show that in a QSH system either the energy gap or
the gap in the spectrum of P σzP needs to close on the
edges. We find that a TRS-broken QSH system can have
either gapless or gapped edge states, depending on the
properties of the confining potential near the boundaries.
The gapless edge states are protected by the bulk topo-
logical invariant rather than any symmetries, which can
remain to be robust in the presence of impurities.
Acknowledgment This work is supported by the
State Key Program for Basic Researches of China un-
der Grant Nos. 2009CB929504 (LS), 2011CB922103 and
2010CB923400 (DYX), by the National Natural Science
Foundation of China under Grant Nos. 11074110 (LS),
11174125, 11074109, and 91021003 (DYX), and by a
project funded by the PAPD of Jiangsu Higher Educa-
tion Institutions.
∗ Electronic address: shengli@nju.edu.cn
[1] K. V. Klitzing, G. Dorda, and M. Pepper, Phys. Rev.
Lett. 45, 494 (1980).
[2] C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801
(2005).
5
[3] B. A. Bernevig, T. L. Hughes and S. C. Zhang, Science,
314 1757 (2006).
[4] M. Konig, S. Wiedmann, C. Bruene, A. Roth, H. Buh-
mann, L. W. Molenkamp, X. L. Qi and S. C. Zhang,
Science 318, 766 (2007).
[5] J. E. Moore and L. Balents, Phys. Rev. B, 75, 121306
(2007).
[6] L. Fu, C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 98,
106803 (2007); L. Fu and C. L. Kane, Phys. Rev. B 76,
045302 (2007).
[7] H. Min, J. E. Hill, N. A. Sinitsyn, B. R. Sahu, L. Klein-
man, and A. H. MacDonald, Phys. Rev. B 74, 165310
(2006); Y. Yao, F. Ye, X. L. Qi, S. C. Zhang, and Z.
Fang, Phys. Rev. B 75, 041401(R) (2007).
[8] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045
(2010).
[9] X. L. Qi and S. C. Zhang, Rev. Mod. Phys. 83, 1057
(2011).
[10] Y. Y. Yang, Z. Xu, L. Sheng, B. G. Wang, D. Y. Xing,
and D. N. Sheng, Phys. Rev. Lett. 107, 066602 (2011).
[11] D. N. Sheng, Z. Y. Weng, L. Sheng, and F. D. M. Hal-
dane, Phys. Rev. Lett. 97, 036808 (2006); L. Sheng, D.
N. Sheng, C. S. Ting, and F. D. M. Haldane, Phys. Rev.
Lett. 95, 136602 (2005).
[12] E. Prodan, Phys. Rev. B 80, 125327 (2009).
[13] C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 95, 146802
(2005).
[14] B. Zhou, H.-Z. Lu, R.-L. Chu, S.-Q. Shen, and Q. Niu,
Phys. Rev. Lett. 101, 246807 (2008).
[15] Q. F. Sun, and X. C. Xie, Phys. Rev. Lett. 104, 066805
(2010).
[16] W. Yao, S. A. Yang, and Q. Niu, Phys. Rev. Lett. 102,
096801 (2009).
[17] R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).
[18] B. I. Halperin, Phys. Rev. B 25, 2185 (1982).
[19] J. E. Avron, D. Osadchy, and R. Seiler, Physics Today,
August (2003), page 38.
|
1607.08207 | 1 | 1607 | 2016-07-27T18:22:37 | The Role of Multilevel Landau-Zener Interference in Extreme Harmonic Generation | [
"cond-mat.mes-hall"
] | Motivated by the observation of multiphoton electric dipole spin resonance processes in InAs nanowires, we theoretically study the transport dynamics of a periodically driven five-level system, modeling the level structure of a two-electron double quantum dot. We show that the observed multiphoton resonances, which are dominant near interdot charge transitions, are due to multilevel Landau-Zener-Stuckelberg-Majorana interference. Here a third energy level serves as a shuttle that transfers population between the two resonant spin states. By numerically integrating the master equation we replicate the main features observed in the experiments: multiphoton resonances (as large as 8 photons), a robust odd-even dependence, and oscillations in the electric dipole spin resonance signal as a function of energy level detuning. | cond-mat.mes-hall | cond-mat | The Role of Multilevel Landau-Zener Interference in Extreme Harmonic Generation
J. Stehlik,1 M. Z. Maialle,2 M. H. Degani,2 and J. R. Petta1
1Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
2Faculdade de Ciencias Aplicadas, Universidade Estadual de Campinas, 13484-350 Limeira, Sao Paulo, Brazil
Motivated by the observation of multiphoton electric dipole spin resonance processes in InAs
nanowires, we theoretically study the transport dynamics of a periodically driven five-level system,
modeling the level structure of a two-electron double quantum dot. We show that the observed
multiphoton resonances, which are dominant near interdot charge transitions, are due to multilevel
Landau-Zener-Stuckelberg-Majorana interference. Here a third energy level serves as a shuttle that
transfers population between the two resonant spin states. By numerically integrating the master
equation we replicate the main features observed in the experiments: multiphoton resonances (as
large as 8 photons), a robust odd-even dependence, and oscillations in the electric dipole spin
resonance signal as a function of energy level detuning.
PACS numbers: 71.70.Ej, 73.63.Kv, 76.30.-v, 85.35.Gv
I.
INTRODUCTION
Harmonic generation occurs in a nonlinear system
when driving at frequency f results in a physical response
of the system at multiples of the driving frequency, e.g.
2f , 3f , 4f , and underpins nonlinear and quantum op-
tics [1, 2]. Two-photon absorption can be observed in
optically pumped systems at high powers [3, 4]. Har-
monic generation has also been observed in semiconduc-
tor systems that are driven with terahertz pulses [5] and
in electrically driven quantum dots [6, 7]. Generally, mul-
tiphoton resonances are only observed at very high drive
fields [8]. As a result, experimental observations are often
limited to two-photon processes.
Multiphoton resonances were recently observed in elec-
tric dipole spin resonance (EDSR) in nanowire and pla-
nar quantum dots [6, 7, 9]. Early experiments in these
systems demonstrated electric driving of single electron
spins [10]. These data were largely consistent with the-
oretical predictions, with an EDSR response observed
when hf = Ezi, where Ezi = giµBB is the Zeeman
energy of the i-th dot, h is Planck's constant, f is the
frequency of the electric driving field, gi is the electron
g-factor of i-th dot, µB is the Bohr magneton and B is the
applied magnetic field [11, 12]. However, more detailed
investigations revealed that the multiphoton resonances
were strongest when the double quantum dot (DQD) was
driven near the interdot charge transition [9]. The EDSR
harmonics, indexed by integer n, followed the resonance
condition nhf = Ezi and showed a remarkable odd-even
dependence, wherein the sign of the EDSR signal differed
for odd and even n.
In this paper we develop a full model of the DQD,
building upon a three-level model of Danon and Rud-
ner [13]. We start by calculating the time-evolution of a
simple five-level system, which captures the physics of a
two-electron DQD. These simulations demonstrate that
when the DQD is initialized in a spin-blocked state the
system can make a Landau-Zener-Stuckelberg-Majorana
(LZSM) transition to an intermediate state, before mak-
ing a final LZSM transition to a resonant unblocked state.
Thus the harmonics can be understood as being a multi-
level LZSM effect [14].
The EDSR resonances were observed in transport mea-
surements. Therefore, to realistically model the exper-
imental system, we add coupling to source-drain elec-
trodes, decoherence, and charge noise [15]. Our work ex-
tends the simple three-level model presented in Ref. [13]
to a complete 5-level system that accurately describes
a two-electron singlet-triplet qubit [16]. The additional
levels are found to contribute to the observed resonances
and allow us to make a quantitative comparison with the
experimental data.
The outline of the paper is as follows.
In Sec. II
we describe the dynamics of a driven two-level system
(TLS). The celebrated LZSM equation is introduced be-
fore showing that periodic driving gives rise to n-photon
resonance conditions. In Sec. III we describe the singlet-
triplet energy level diagram of a doubly occupied DQD,
and show qualitatively how multilevel LZSM interference
gives rise to harmonic generation. Finally in Sec. IV,
we add the effects of lead coupling and decoherence to
our model. The calculated response is compared with
the experimental results and shown to reproduce the key
features observed in the data [9].
LANDAU-ZENER-ST UCKELBERG-MAJORANA
II. TWO-LEVEL
DYNAMICS
The LZSM problem describes the evolution of a TLS
that is forced through an energy level anticrossing [17 --
21]. LZSM considered a generic TLS with states 0(cid:105) and
1(cid:105), described by the Hamiltonian:
(cid:19)
(cid:18) 0 ∆
∆ −
HTLS =
.
(1)
Here the detuning parameter sets the energy difference
between the states. An off-diagonal matrix element ∆
6
1
0
2
l
u
J
7
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
7
0
2
8
0
.
7
0
6
1
:
v
i
X
r
a
A. Two-level dynamics under periodic driving
2
The effects of quantum interference are revealed when
the system is repeatedly driven through an anticross-
ing. Consider the case of sinusoidal driving. Here
(t) = 0 + 1 sin (2πf t), where 0 is a fixed detuning
set by dc gate voltages in the experiment and 1 = eVac
is the amplitude of the ac drive. The ac drive results
in two anticrossing traversals for each cycle of the drive
field, with an approximate level velocity:
(cid:115)
(cid:18) 0
(cid:19)2
1
v ≈ 2π1f
1 −
.
(3)
Figure 1. (a) Energy level diagram described by Eq. 1. Si-
nusoidal driving with (t) = 0 + 1 sin(2πf t) causes repeated
traversals of the anticrossing.
(b) Energy levels as a func-
tion of time for sinusoidal driving. Each passage through
the anticrossing results in some population transfer, analo-
gous to a beam splitter. A phase Φi is accumulated between
beam splitter events. (c) Population of the 1(cid:105) state, P1(cid:105), as
a function of time for two different values of 0 [pictured in
(a)]. Dashed lines indicate the times of the LZSM transitions
(i.e. t's such that (t) = 0). For 0 = −39 µeV, the accumu-
lated phases result in destructive interference and successive
LZSM transitions cancel each other out (blue trace). With
0 = −16.5 µeV (red trace) successive LZSM transitions in-
terfere constructively, resulting in nearly complete transfer of
population to the 1(cid:105) state at t ≈ 2 ns.
(cid:19)
(cid:18)
−2π
∆2
v
hybridizes the levels, resulting in an anticrossing of mag-
nitude 2∆ at = 0 [Fig. 1(a)].
In the LZSM problem the energy difference between
the states is varied with a linear level velocity v = dE1(cid:105)−
E0(cid:105)/dt, where E1(cid:105) (E0(cid:105)) is the energy of the 1(cid:105) (0(cid:105))
state. This can be accomplished by driving the detuning
according to (t) = vt. Starting in state 0(cid:105) at time
ti = −∞, the probability of remaining in state 0(cid:105) at
time tf = +∞ is given by the LZSM formula [17 -- 20]:
,
PLZSM = exp
(2)
where is the reduced Planck's constant. When v (cid:28)
∆2, PLZSM ≈ 0 and the evolution is adiabatic. The sys-
tem remains in the instantaneous eigenstate. In the op-
posite limit PLZSM ≈ 1 and the sudden change approxi-
mation can be made. Here a TLS that starts in 0(cid:105) will
remain in 0(cid:105) after the sweep through the anticrossing.
With intermediate level velocities, a sweep through the
anticrossing will generate a superposition of states 0(cid:105) and
1(cid:105) [22 -- 24]. This physics has been harnessed for quan-
tum control in a variety of systems, including Rydberg
atoms [25, 26], nitrogen vacancy centers [27, 28], and
GaAs DQDs [29].
In Fig. 1(b) we plot the energy levels as a function of time
for sinusoidal driving with f = 2 GHz, 1 = 100 µeV,
∆ = 4 µeV, and 0 = −16.5 µeV. A system initialized in
0(cid:105) at t = 0 will be forced through the anticrossing every
time that 0 = −1 sin (2πf t). For our driving parame-
ters the first crossing happens at t = 0.01 ns. After the
first sweep through the anticrossing the probability of re-
maining in the 0(cid:105) state is approximately PLZSM = 0.9.
The non-unity probability results in the system entering a
superposition of states 0(cid:105) and 1(cid:105). After the anticrossing
the states accumulate a relative phase Φ1 due to their en-
ergy difference. At time t = 0.21 ns the system is forced
back through the anticrossing, interfering the two-paths
of the interferometer.
Such interference occurs twice during each cycle and
depends on the phases Φ1 and Φ2. Additionally the total
accumulated phase Φ1 + Φ2 will result in interference be-
tween subsequent cycles. Depending on the precise value
of the phase the system will exhibit behavior ranging
from constructive to destructive interference. To illus-
trate this we plot the occupation of state 1(cid:105), P1(cid:105), as a
function of time in Fig. 1(c). We use two different val-
ues of the offset detuning 0 and numerically integrate
Schrodinger's equation with the Hamiltonian in Eq. 1.
For 0 = −16.5 µeV the phase accumulation results in
constructive interference and P1(cid:105) oscillates between 0
and 1. For 0 = −39 µeV, however, the interference
is destructive. As such the population transfer resulting
from one LZSM transition is immediately canceled out
by the next LZSM transition.
In the fast driving limit (where 1 − PLZSM (cid:28) 1),
the condition for constructive interference can be de-
rived by considering the phase accumulation Φ1 occur-
ring between the first and second LZSM transition and
Φ2 occurring between the second and the third LZSM
transition [see Fig. 1(b)]. For constructive interference
to occur Φ1 − Φ2 = 2nπ for an integer n [21]. With
Φi =
dt, the reso-
dt ≈ ti+1(cid:82)
ti+1(cid:82)
0+eVac sin(2πf t)
E1(cid:105)−E0(cid:105)
ti
ti
nance condition reduces to nhf = 0. Here ti is the time
of the i-th anticrossing traversal. This can be interpreted
as an n-photon resonance condition and has been ob-
served in several studies on both superconducting qubits
[30, 31] and GaAs charge qubits [32].
ε(t) = ε0+ε1sin(2πft) 10Φ12ΔΦ2E (µeV)ε (µeV)E (µeV)t(ns)1.00.80.20.0P4310t (ns)(a)(c)(b)1ConstructiveDestructive-1000100-10001000.62.04.00.0-100010020.40.6 3
five-state basis (S(1, 1)(cid:105), S(2, 0)(cid:105), T0(1, 1)(cid:105), T−(1, 1)(cid:105),
T+(1, 1)(cid:105)) can be written as:
HDQD =
Ez1−Ez2
0
∆
2
0
0
∆ Ez1−Ez2
−
0
∆so
∆so
2
0
0
0
0
0
∆so
0
Ez1+Ez2
2
0
0
∆so
0
0
− Ez1+Ez2
2
.
(4)
Figure 2. DQD energy levels plotted as a function of detuning
with B = 45 mT. Interdot tunnel coupling ∆ = 16.5 µeV
hybridizes the S(2,0) and S(1,1) states, while the spin-orbit
coupling ∆so = 4 µeV hybridizes the S(2,0) state with the
T+(1,1) and T−(1,1) states.
III. PERIODICALLY DRIVEN
TWO-ELECTRON DOUBLE QUANTUM DOT
EDSR experiments are typically performed near a
Pauli-blocked interdot charge transition, where the to-
tal number of electrons in the DQD is even [10, 33]. We
use a five-level Hamiltonian to capture the singlet-triplet
physics of this system. Starting with the DQD initial-
ized in a spin-blocked triplet state, we show that multi-
level LZSM interference leads to harmonics in the EDSR
response near zero detuning [13].
A. Double quantum dot energy level diagram
To reflect the experimental conditions we consider a
spin-orbit qubit defined in an InAs nanowire, as schemat-
ically shown in the inset of Fig. 2. We note that robust
Pauli blockade has been observed in many experiments
at higher electron occupancies [9, 34, 35]. For simplicity,
we therefore consider a DQD in the two-electron regime,
with one electron in each dot (1,1), or with two elec-
trons in one dot, e.g. (2,0). Here we use the notation
(Nl,Nr), where Nl (Nr) is the number of electrons in the
left (right) dot. In the (1,1) charge configuration there
are four spin states, the singlet state S(1,1) and the three
triplet states T−(1,1), T0(1,1), T+(1,1), with total spin
components ms = −1, 0, +1. An external magnetic field
results in Zeeman splitting of the electronic spin states
with Ez1 = g1µBB and Ez2 = g2µBB. The g-factors
are generally different due to strong spin-orbit coupling.
We set g1 = 7.8 and g2 = 6.8 to match the values mea-
sured in Ref. [9]. Due to the tight electric confinement
there is a large singlet-triplet splitting Est = 5.4 meV.
As a result, the (2,0) triplet manifold can be neglected
in most experimental situations. The Hamiltonian in the
Here is the detuning, ∆ is the interdot tunnel coupling,
and ∆so generates spin-orbit anticrossings [36, 37]. The
resulting energy level diagram is shown in Fig. 2 with pa-
rameters ∆ = 16.5 µeV, ∆so = 4 µeV [37 -- 40]. These pa-
rameters are taken from Ref. [9] and the well-established
material properties of InAs [41 -- 43].
B. Time evolution of the five-level double quantum
dot
To illustrate the importance of LZSM dynamics we
time-evolve the five-level system described by Eq. 4. This
simple model reproduces the strong detuning dependence
that is observed in the experimental data. The system is
initialized in the T+(1, 1) state and propagated under an
oscillatory detuning of the form (t) = 0 + 1 sin (2πf t),
with B = 45 mT, and 1 = 1.3 meV. Figures 3(a -- d)
show the T0(1,1), T+(1,1), and S(2,0) state occupations
as a function of time. For panels (a,c) we choose driv-
ing that corresponds to a one-photon resonance between
the T+(1,1) and T0(1,1) states. For panels (b,d) the
drive corresponds to a two-photon resonance between the
T+(1,1) and T0(1,1) states. In the far detuned region (0
= 1.9 meV) the ac drive does not have a large enough
amplitude to force the system through the anticrossings
near = 0.
In this case population transfer into the
T0(1,1) state is visible for the n = 1 harmonic, as seen
in Fig. 3(a) [11]. However, the dynamics for the n = 2
resonance proceed on a significantly slower time scale, as
expected from standard spin resonance theory [8]. For
both the n = 1 and n = 2 resonance conditions, there
is no significant population transfer into the S(2,0) state
[see Fig. 3(a,b)].
When 0 (cid:46) 1 the dynamics are radically different.
Here the system is repeatedly forced through the level
anticrossings, causing a portion of the population to be
transferred to the S(2,0) state, from which the system
can make further LZSM transitions to either the T+(1,1)
or T0(1,1) state. Evidence of these processes can be seen
in Fig. 3(c,d). For both the n = 1 and n = 2 resonances
clear population transfer is observed between the T+(1,1)
and T0(1,1) states. The population transfer is mediated
by the S(2,0) state, as evidenced by the periodic jumps
of the S(2,0) state population. Since transitions to both
the T−(1,1) and S(1,1) states are not resonant, there is
no significant population transfer into them. Finally note
that the timescale over which population transfer occurs
InAs50 nm-0.10-0.050.000.050.10E (meV)0.20.10.0-0.1ε (meV)S(2,0)T-(1,1)T+(1,1)S(1,1)T0(1,1)2Δso2Δso-0.2Ez2=g2µBBEz1=g1µBB 4
Figure 4. (a) Illustration of the charge transport cycle. Start-
ing from the (1,0) charge state an electron is loaded into the
right dot. If a (1,1) triplet state is loaded the transport be-
comes blocked until the spin is rotated into the S(1,1) state,
from which the system can tunnel to S(2,0) and then into the
left lead. (b) Illustration of the various processes included in
simulations of the transport dynamics. Black arrows indicate
relaxation and incoherent tunneling processes, while green ar-
rows indicate coherent processes that arise due to the periodic
driving.
state. Strong electron-phonon coupling results in fast re-
laxation from the S(1,1) state to the S(2,0) state. The
electron then tunnels to the left lead with rate ΓL, com-
pleting the transport cycle.
A. Time evolution
We model the time dependence of the periodically
driven system by evolving the density matrix ρ using the
master equation:
dρ
dt
= − i
ΓR
4
[HDQD, ρ] + ΓLD [(1, 0)(cid:105)(cid:104)S(2, 0)] ρ+ (5)
(cid:88)
D [S(1, 1)(cid:105)(cid:104)(1, 0)] ρ+
D [Tj(1, 1)(cid:105)(cid:104)(1, 0)] ρ+
(cid:88)
ΓspinD [S(1, 1)(cid:105)(cid:104)Tj(1, 1)] ρ+
j
j
ΓS(2,0)D [S(2, 0)(cid:105)(cid:104)S(2, 0)] ρ+
Θ () ΓchargeD [S(2, 0)(cid:105)(cid:104)S(1, 1)] ρ+
Θ (−) ΓchargeD [S(1, 1)(cid:105)(cid:104)S(2, 0)] ρ.
Here D [A] ρ = −1/2{A†A, ρ} + AρA† is the Lindblad
superoperator describing relaxation and decoherence, j
spans the ms = 0, +1, and −1 triplet states. Θ(x) is the
Heaviside step function. As shown in Fig. 4(b), terms
Figure 3. S(2,0), T0(1,1), and T+(1,1) occupation probabil-
ities plotted as a function of time with 1 = 1.3 meV and
B = 45 mT. The system is initialized in the T+(1,1) state at
t = 0. In (a,c) f is chosen to drive a n = 1 photon EDSR pro-
cess between the T+(1,1) and T0(1,1) states, while for (b,d)
f is chosen to drive a n = 2 photon EDSR process between
the T+(1,1) and T0(1,1) states. There is a remarkable differ-
ence between the dynamics when the levels are far detuned
[0 = 1.9 meV in (a,b)] compared to when the levels are near
zero detuning [0 = -0.05 meV (c,d)]. Near zero detuning, spin
transfer processes occur with significant population transfer
into the S(2,0) state, and occur on a much faster timescale
than in the case of far detuning. Since in all cases the S(1,1)
and T−(1,1) states (not shown) are not on resonance, there
is no significant population transfer into these states.
is much shorter when 0 (cid:46) 1.
IV. TRANSPORT CYCLE
In the previously reported experiments [9], the EDSR
response is detected by measuring the dc current through
the DQD. The DQD is configured at finite bias in Pauli
blockade. Resonant ac driving rotates the electronic spin
states, lifting the Pauli blockade, resulting in a small,
but measurable current [10, 33]. To make a quantitative
comparison with experiment we therefore model the full
transport cycle of the DQD. As seen in Fig. 4(a), starting
from the empty (1,0) state, tunneling from the right lead
results in the (1,1) charge configuration. If a polarized
(1,1) triplet state is loaded, the transport cycle becomes
blocked as tunneling into the (2,0) charge configuration
is forbidden by the Pauli exclusion principle [44]. The
Pauli blockade can be lifted by driving an EDSR tran-
sition, which rotates a blocked (1,1) state [T−(1,1) or
T+(1,1)] to an unblocked state [S(1,1) or T0(1,1)].
In
our case T0(1,1) is unblocked due to the difference in
g-factors, which leads to further rotation to the S(1,1)
1.00.50.01.00.50.0(a)(c)(b)ε0 = -0.05 meVε0 = 1.9 meVPPt(ns)t(ns)T0(1,1)T+(1,1)S(2,0)T0(1,1)T+(1,1)S(2,0)T0(1,1)T+(1,1)S(2,0)T0(1,1)T+(1,1)S(2,0)3020100n = 13020100n = 2(d)(1,0)T+(1,1)T0(1,1)T-(1,1)S(1,1)S(2,0)ΓR4ΓchargeΓLΓspin(b)Incoherent RelaxationCoherent Processes(a)ΓRΓLEDSRΓR4ΓR4ΓR4 5
fied in Sec. III. For each value of B and f we initialize the
system in the (1,0) state. We then numerically propagate
the system in time until the system reaches a steady state
(typically after 20 ns of evolution). We can then write
the current as I = eΓRP(1,0), where P(1,0) is the extracted
steady state population of the (1,0) state. We note that
for typical drive parameters the minimum time between
the T+(1,1)↔S(2,0) and the S(2,0)↔T0(1,1) LZSM tran-
sitions is on the order of a picosecond. As a result, the
S(2,0) state can still act as an intermediary that trans-
fers population between the other levels, despite the large
relaxation and decoherence rates.
In Figs. 5(a,b) we compare the spectroscopic data ob-
tained in the experiments with our model. Figure 5(a)
shows the data that were obtained with 0 = 0. Here
the current I is plotted as a function of magnetic field
strength B and the applied excitation frequency f . For
n = 1 two distinct resonance lines of increased current
are visible. These correspond to Ez1 (g1 = 7.8) and Ez2
(g2 = 6.8). Higher photon transitions display a striking
odd-even dependence. Multiphoton resonances up to n
= 8 are observed. In Fig. 5(b) we plot the current I as a
function of B and f , as calculated by the model described
above. Following previous work, we include the effects of
quasi-static charge noise by using Gaussian smoothing of
the response [40, 45, 46]. In this plot the effects of charge
noise are included by sampling 30 different randomly cho-
sen offset detunings and weighing the final response with
a Gaussian of width σcharge = 60 µeV centered around
0 = 0. The effects of the fluctuating nuclear field are in-
cluded by smoothing the response in B with a Gaussian
of width 3.3 mT, which is the fluctuating Overhauser field
measured in Ref. [9]. This Overhauser field is consistent
with other values reported in the literature [47].
The results of our model replicate the overall struc-
ture of the experimental data. Both the large number of
higher photon transitions and the odd-even dependence
of the leakage current are in qualitative agreement with
the data. At a finer level, there are some slight deviations
between the theoretical predictions and the experimental
data. The observed current is in general higher then our
model predicts. We attribute this to imperfect fitting of
the tunneling rates. The simulations also exhibit faint
high frequency oscillations (oriented horizontally in the
figure) that are largely independent of B. We attribute
this to the imperfect modeling of the charge noise.
The experimental data also exhibit a characteristic de-
tuning dependence. To make a valid comparison with
experiments, we define ∆Ires as the change between res-
onant and non-resonant leakage current. In the experi-
ment this quantity was obtained by measuring the cur-
rent along nhf = g1µBB and subtracting from it the
current found approximately 5 mT away [9]. Figure 6
plots ∆Ires for 1 = 1.3 meV and f = 4.7 GHz (succes-
sive harmonics are achieved by increasing B). The data
points are adapted from Ref. [9], while solid lines show
the calculated ∆Ires from the model. We note that all
experimentally observed features are reproduced. First,
Figure 5.
(a) Measured current I through the device as a
function of magnetic field B and frequency f . With the DQD
configured at zero detuning a large number of multiphoton
resonances are observed. Adapted from Ref. [9]. (b) Calcu-
lated current through the DQD as a function of B and f . The
color-scale axes are slightly different since the off-resonance
leakage current measured in experiment is device specific.
with ΓL (ΓR) account for coupling to the left (right) lead:
the ΓL term relaxes the S(2,0) state into the empty (1,0)
state, while the ΓR term moves the population from the
empty state to one of the four (1,1) spin states. Note that
our model assumes unpolarized lead tunneling. There-
fore the tunneling probability into any of the (1,1) spin
states is equal. Γcharge is included to account for charge
relaxation, which is known to take place on nanosecond
timescales in semiconductor DQDs. For > 0, Γcharge
relaxes the S(1,1) state into the S(2,0) state, while for
< 0 this process is reversed. This ensures that charge
relaxation only takes place from a state of higher energy
to a state of lower energy. Γspin models spin relaxation,
which is relatively slow in semiconductor DQDs. Finally
ΓS(2,0) [not pictured in Fig. 4(b)] results in charge deco-
herence.
B. Charge transport and the role of decoherence
We now simulate the experimental system using realis-
tic parameters to account for tunnel coupling to the leads,
charge noise, and dephasing. To match typical experi-
mental conditions, we set ΓL = ΓR = 2 GHz, Γcharge = 1
GHz, ΓS(2,0) = 10 GHz, and Γspin = 1 MHz. The param-
eters in the Hamiltonian describing the DQD are speci-
I (pA)f (GHz)B (mT)8642864215010050I (pA)f (GHz)(b)(a)n = 1 n = 2 n = 3 n = 4Ez1n = 1 n = 2 n = 3 n = 4302010302010Ez2 V. CONCLUSION
6
We have shown that the multiphoton resonances re-
cently observed in EDSR experiments are due to multi-
level LZSM interference. The fact that these high order
processes are possible raises several intriguing possibili-
ties. For example, since the mechanism for population
transfer is quite distinct from traditional Rabi oscilla-
tions, one could obtain very fast population transfer, an
attractive proposition for quantum manipulation [48, 49].
With smaller charge noise it would also be possible to per-
form a direct measurement of the spin-orbit gaps [50] and
investigate the interplay of the spin-orbit and hyperfine
interactions, both of which open gaps between the S(2,0)
state and the T+(1,1) and T−(1,1) states [51]. Finally
we note that so far experiments studying LZSM processes
have focused on the zero detuning region near the singlet
state anticrossing. However, similar behavior should also
be observable near anticrossings with the states in the
(0,2) triplet manifold. Due to the use of transport as a
probe of spin states, these have so far been experimen-
tally inaccessible. However, recent developments of fast
cavity based readout [40, 52] should make this exciting
regime within reach of experimental studies.
ACKNOWLEDGMENTS
We thank Sorawis Sangtawesin for assistance develop-
ing the simulation code. This research is funded by the
Gordon and Betty Moore Foundation's EPiQS Initiative
through Grant GBMF4535, with partial support from the
National Science Foundation (DMR-1409556 and DMR-
1420541). MZM and MHD acknowledge support from
Fapesp and INCT-DISSE/CNPq, Brazil. Devices were
fabricated in the Princeton University Quantum Device
Nanofabrication Laboratory.
Figure 6. Measured and simulated ∆Ires (resonant change
of current) as a function of 0 for (a) n = 1, (b) n = 2, (c)
n = 3, (d) and n = 4.
the odd-even dependence is evident. Near zero detuning
∆Ires has a maximum (minimum) for odd (even) photon
resonances. Second, the number of oscillations in ∆Ires
increases with n, as observed in experiment. Lastly, the
magnitude of ∆Ires is in good agreement with the data.
[1] P. A. Franken, A. E. Hill, C. W. Peters, and G. Weinre-
[11] V. N. Golovach, M. Borhani, and D. Loss, Phys. Rev. B
ich, Phys. Rev. Lett. 7, 118 (1961).
74, 165319 (2006).
[2] M. O. Scully and M. S. Zubairy, Quantum Optics (Cam-
[12] C. Flindt, A. S. Sørensen, and K. Flensberg, Phys. Rev.
bridge University Press, Cambridge, England, 1997).
Lett. 97, 240501 (2006).
[3] I. D. Abella, Phys. Rev. Lett. 9, 453 (1962).
[4] W. Kaiser and C. G. B. Garrett, Phys. Rev. Lett. 7, 229
(1961).
[5] B. Zaks, R. B. Liu, and M. S. Sherwin, Nature (London)
483, 580 (2012).
[6] S. Nadj-Perge, V. S. Pribiag, J. W. G. van den Berg,
K. Zuo, S. R. Plissard, E. P. A. M. Bakkers, S. M. Frolov,
and L. P. Kouwenhoven, Phys. Rev. Lett. 108, 166801
(2012).
[7] E. A. Laird, C. Barthel, E. I. Rashba, C. M. Marcus,
M. P. Hanson, and A. C. Gossard, Semicond. Sci. Tech-
nol. 24, 064004 (2009).
[8] B. D. Cohen-Tannoudji, C. and F. Laloe, Quantum Me-
[13] J. Danon and M. S. Rudner, Phys. Rev. Lett. 113, 247002
(2014).
[14] A. V. Shytov, Phys. Rev. A 70, 052708 (2004).
[15] E. Temchenko, S. Shevchenko, and A. Omelyanchouk,
Phys. Rev. B 83, 144507 (2011).
[16] J. R. Petta, A. C. Johnson, J. M. Taylor, E. A. Laird,
A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson,
and A. C. Gossard, Science 309, 2180 (2005).
[17] L. Landau, Phys. Z. Sowjetunion 2, 46 (1932).
[18] C. Zener, Proc. R. Sco. London Ser. A 137, 696 (1932).
[19] E. Stuckleberg, Helv. Phys. Acta 5, 36 (1932).
[20] E. Majorana, Nuovo Cimento 9, 43 (1932).
[21] S. Shevchenko, S. Ashhab, and F. Nori, Phys. Rep. 492,
chanics Volume One (Wiley, New York, 1977).
1 (2010).
[9] J. Stehlik, M. D. Schroer, M. Z. Maialle, M. H. Degani,
[22] Y. Gefen and D. J. Thouless, Phys. Rev. Lett. 59, 1752
and J. R. Petta, Phys. Rev. Lett. 112, 227601 (2014).
(1987).
[10] S. Nadj-Perge, S. M. Frolov, E. P. A. M. Bakkers, and
L. P. Kouwenhoven, Nature (London) 468, 1084 (2010).
[23] M. Sillanpaa, T. Lehtinen, A. Paila, Y. Makhlin, and
P. Hakonen, Phys. Rev. Lett. 96, 187002 (2006).
-2-1012-4-202-2-1012ε0 (meV)-6-4-202∆Ires (pA)∆Ires (pA)(a)(b)(c)(d)ε0 (meV) 7
[24] Y. Kayanuma, Phys. Rev. A 55, R2495 (1997).
[25] M. C. Baruch and T. F. Gallagher, Phys. Rev. Lett. 68,
3515 (1992).
[26] S. Yoakum, L. Sirko, and P. M. Koch, Phys. Rev. Lett.
69, 1919 (1992).
Mod. Phys. 75, 1 (2002).
[40] K. D. Petersson, L. W. McFaul, M. D. Schroer, M. Jung,
J. M. Taylor, A. A. Houck, and J. R. Petta, Nature
(London) 490, 380 (2012).
[41] J. Singh, Physics of semiconductors and their het-
[27] L. Childress and J. McIntyre, Phys. Rev. A 82, 033839
erostructures (McGraw-Hill, 1993).
(2010).
[28] J. Zhou, P. Huang, Q. Zhang, Z. Wang, T. Tan, X. Xu,
F. Shi, X. Rong, S. Ashhab, and J. Du, Phys. Rev. Lett.
112, 010503 (2014).
[42] D. L. Perry, Handbook of inorganic compounds, 2nd ed.
(CRC Press, 2011).
[43] D. Liang and X. P. Gao, Nano Lett. 12, 3263 (2012).
[44] K. Ono, D. G. Austing, Y. Tokura,
and S. Tarucha,
[29] J. R. Petta, H. Lu, and A. C. Gossard, Science 327, 669
Science 297, 1313 (2002).
(2010).
[45] K. D. Petersson, J. R. Petta, H. Lu, and A. C. Gossard,
[30] W. D. Oliver, Y. Yu, J. C. Lee, K. K. Berggren, L. S.
Phys. Rev. Lett. 105, 246804 (2010).
Levitov, and T. P. Orlando, Science 310, 1653 (2005).
[46] Y.-Y. Liu, K. D. Petersson, J. Stehlik, J. M. Taylor, and
[31] D. M. Berns, M. S. Rudner, S. O. Valenzuela, K. K.
Berggren, W. D. Oliver, L. S. Levitov, and T. P. Or-
lando, Nature (London) 455, 51 (2008).
[32] J. Stehlik, Y. Dovzhenko, J. R. Petta, J. R. Johansson,
F. Nori, H. Lu, and A. C. Gossard, Phys. Rev. B 86,
121303 (2012).
[33] K. C. Nowack, F. H. L. Koppens, Y. V. Nazarov, and
L. M. K. Vandersypen, Science 318, 1430 (2007).
[34] A. C. Johnson, J. R. Petta, C. M. Marcus, M. P. Hanson,
and A. C. Gossard, Phys. Rev. B 72, 165308 (2005).
[35] E. Nielsen, E. Barnes, J. P. Kestner, and S. Das Sarma,
Phys. Rev. B 88, 195131 (2013).
[36] V. N. Golovach, A. Khaetskii, and D. Loss, Phys. Rev.
B 77, 045328 (2008).
[37] S. Nadj-Perge, S. M. Frolov, J. W. W. van Tilburg,
J. Danon, Y. V. Nazarov, R. Algra, E. P. A. M. Bakkers,
and L. P. Kouwenhoven, Phys. Rev. B 81, 201305 (2010).
[38] F. H. L. Koppens, C. Buizert, I. T. Vink, K. C. Nowack,
T. Meunier, L. P. Kouwenhoven, and L. M. K. Vander-
sypen, J. Appl. Phys. 101, 081706 (2007).
[39] W. G. van der Wiel, S. De Franceschi, J. M. Elzerman,
T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev.
J. R. Petta, Phys. Rev. Lett. 113, 036801 (2014).
[47] M. D. Schroer, K. D. Petersson, M. Jung, and J. R.
Petta, Phys. Rev. Lett. 107, 176811 (2011).
[48] J. W. G. van den Berg, S. Nadj-Perge, V. S. Pribiag, S. R.
Plissard, E. P. A. M. Bakkers, S. M. Frolov, and L. P.
Kouwenhoven, Phys. Rev. Lett. 110, 066806 (2013).
[49] L. Gaudreau, G. Granger, A. Kam, G. C. Aers, S. A.
Studenikin, P. Zawadzki, M. Pioro-Ladriere, Z. R.
Wasilewski, and A. S. Sachrajda, Nature Phys. 8, 54
(2012).
[50] M. D. Shulman, S. P. Harvey, J. M. Nichol, S. D. Bartlett,
and A. Yacoby, Nature
A. C. Doherty, V. Umansky,
Comm. 5, 5156 (2014).
[51] J. M. Nichol, S. P. Harvey, M. D. Shulman, A. Pal,
V. Umansky, E. I. Rashba, B. I. Halperin, and A. Ya-
coby, Nature Comm. 6, 7682 (2015).
[52] J. Stehlik, Y.-Y. Liu, C. M. Quintana, C. Eichler, T. R.
Hartke, and J. R. Petta, Phys. Rev. Appl. 4, 014018
(2015).
|
1111.1591 | 2 | 1111 | 2012-05-31T12:14:17 | Noise thermometry in narrow 2D electron gas heat baths connected to a quasi-1D interferometer | [
"cond-mat.mes-hall"
] | Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in one heating channel, we perform cross-correlated noise measurements locally in the directly heated channel and nonlocally in the other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection. We observe the same functional dependence of the thermal noise on the heating current. The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D systems. In the quantum interferometer, we show the decoherence due to the diffusion of hot electrons from the heating channel into the quasi-1D system, which causes a thermal gradient. | cond-mat.mes-hall | cond-mat |
Noise thermometry in narrow 2D electron gas heat baths connected to a quasi-1D
interferometer
Sven S. Buchholz,1, 2, ∗ Elmar Sternemann,3, 2 Olivio Chiatti,1
Dirk Reuter,4 Andreas D. Wieck,4 and Saskia F. Fischer1, 2, †
1Neue Materialien, Institut fur Physik, Humboldt-Universitat zu Berlin, 12489 Berlin, Germany
2Werkstoffe und Nanoelektronik, Ruhr-Universitat Bochum, 44780 Bochum, Germany
3Experimentelle Physik 2, Technische Universitat Dortmund, 44227 Dortmund, Germany
4Angewandte Festkorperphysik, Ruhr-Universitat Bochum, 44780 Bochum, Germany
(Dated: June 15, 2021)
Thermal voltage noise measurements are performed in order to determine the electron temperature
in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and
1.4 K. Two narrow two-dimensional (2D) heating channels are connected by a quasi-1D quantum
interferometer. Under dc current heating of the electrons in one heating channel, we perform
cross-correlated noise measurements locally in the directly heated channel and nonlocally in the
other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection.
The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D
systems. Under nonlocal current heating, which establishes a thermal gradient across the quantum
interferometer, we show the decoherence in this structure by Aharonov-Bohm measurements.
PACS numbers: 63.20.kd, 72.20.Pa, 73.23.Ad, 85.35.Ds
I.
INTRODUCTION
In recent years, research activities in the field of nano-
structured materials have been increasingly focused on
thermoelectric properties and thermal non-equilibrium.1
In particular, the creation and detection of thermal
gradients and the determination of lattice and charge
carrier temperatures at the nanoscale remain crucial
issues.
Semiconductor heterostructures may be pre-
pared as model systems for thermoelectric investiga-
tions representing two-dimensional (2D), 1D, and 0D
charge carrier systems. Electrical thermometry methods
have been implemented on the basis of resistance and
mobility measurements,2 -- 4 Shubnikov-de Haas (SdH)
measurements,5 -- 9 quantum point contacts (QPCs),9 -- 12
and quantum dots (QDs)13 -- 15 for such low-dimensional
systems. However, most of these methods are applicable
only at temperatures below roughly 20 K. Thermometry
via mobility measurements is limited due to the contri-
bution of impurity scattering,6,12 and SdH measurements
require a magnetic field which alters the density of states
and possibly the energy relaxation.9 SdH, QPC and QD
thermometry are limited to low lattice temperatures due
to thermal smearing of the discrete energy states.
Applying the above thermometry methods enables to
study the charge carrier energy-loss to the lattice, which
provides fundamental information about electron-phonon
interactions. Whereas much effort has been made in the
field of 2D charge carrier systems, mostly in the form
of wide Hall bar structures,8,9,12 only a few experiments
focus on the transition to 1D systems where electron-
phonon interactions may be altered.16 -- 18
Here, we apply electronic noise measurements as a di-
rect method for the determination of the charge carrier
temperature in a particularly narrow 2D GaAs/AlGaAs
structure. Thermal (Johnson-Nyquist) noise measure-
ments are applicable to different materials with a
wide range of operating temperatures, such as diffu-
sive metal films and wires,19,20 and semiconductors host-
ing high mobility 3D,21 2D,16 and (quasi)-1D electronic
systems.16,22
We fabricated a device consisting of a quasi-1D quan-
tum interferometer integrated between two narrow 2D
heating channels in order to create a temperature dif-
ference between the electron reservoirs (heat baths). In
these reservoirs, we measured thermal noise locally and
nonlocally. The interferometer allows us to study the in-
fluence of nonlocal heating on the coherence of electrons
in the quantum structure.
The electron system is heated to a temperature above
the lattice temperature by means of the current heating
technique.10,23,24 We extract the electron temperature in
the narrow 2D channels for different heating currents,
and we find a reduced temperature dependence of the
electron energy-loss rate compared to wide 2D electron
gases (2DEGs). Resistor network simulations of the ther-
mal noise allow us to determine noise contributions of
individual parts of the sample and of the external cir-
cuitry. Additionally, by Aharonov-Bohm (AB) measure-
ments, we show a decoherence effect in the interferometer
on the basis of nonlocal current heating.
II. EXPERIMENTAL DETAILS
A schematic of the device is depicted in Fig. 1(a). The
two narrow 2D heating channels are nominally identical
and connected by a quasi-1D quantum ring. The device
was prepared from a GaAs/AlGaAs heterostructure with
a 2DEG 110 nm below the surface, using electron beam
lithography and 85-nm-deep wet-chemical etching. The
2D electron density and mobility are ns = 2.07·1011 cm−2
and µ = 2.43 · 106 cm2/Vs at T = 4.2 K in the dark.
The heating channels - labeled 'heater I' and 'heater II'
in Fig. 1(b) - are geometrically 2 µm wide and 410 µm
long. This ensures a high thermal noise signal over the
background of the total parasitic noise. SdH measure-
ments along the heating channels yield an electron den-
sity of ns = 1.84 · 1011 cm−2, where we attribute the
deviation from the above-mentioned sheet density to the
lateral confinement of 2 µm. A non-alloyed gold flake
(not shown) on heating channel II remained from the lift-
off process but does not influence the electron transport
properties.
The quantum wires defining the ring (Fig. 1(c)) and its
leads to the heating channels are geometrically 570 nm
wide. From separate measurements on simple quantum
wires (widths 350 to 550 nm), as well as four-terminal
resistance measurements along the quantum ring, we es-
timate that about 10 modes of the quasi-1D subband
structure are populated in the quantum ring in equilib-
rium.
Noise measurements were performed in a 4He cryostat
at bath temperatures of Tbath ≥ 1.4 K and recorded with
an Agilent 89410A spectrum analyzer. At T = 1.4 K,
the heating channels have a four-terminal resistance of
Rh ≈ 6 kΩ, which corresponds to a Nyquist noise of less
than 10−18 V2/Hz. In order to increase the noise signal
of the heating channels above the noise of the spectrum
analyzer (≈ 10−16 V2/Hz), we used two low-noise voltage
preamplifiers with a voltage gain of 103 (Signal Recovery
5184). Cross-correlated measurements were applied to
reduce noise contributions from the preamplifiers.25
We measured the noise spectrum along heater I in
two different heating current setups allowing for local
(Fig. 1(d)) and nonlocal (Fig. 1(e)) heating. In the local
setup, we measured the thermal noise of heater I to which
the heating current was applied. In the nonlocal setup,
thermal noise was measured in heater I, while the heating
current was driven through heater II on the other side of
the quantum ring. The heating current was applied via a
battery-driven voltage source with a 1 MΩ series resistor
on each side of the source. A 1 µF capacitor to ground
was attached on each side in order to reduce parasitic
coupling effects.
We chose the resistance of the heating channel such
that its noise contribution exceeds that of the remain-
ing measurement circuitry. The length of the heating
channels exceeds the electron phase coherence and en-
ergy relaxation lengths, which yields a diffusive trans-
port regime, where the electron temperature Te can be
deduced from the thermal white noise SV,w by means of
the Nyquist formula. If heated by a current, the electrons
are no longer in equilibrium with the lattice and share the
heat energy among themselves through electron-electron
interactions. Energy relaxation takes place via phonon
emission and the diffusion to cold reservoirs.
In order to estimate individual thermal noise contri-
butions, we simulated the sample and the circuitry in a
SPICE model (Cadence PSpice). Next to the individual
resistive and capacitive parts of the wiring and circuitry,
2
FIG. 1: (Color online) (a) Sample layout (to scale) with four-
terminal heating channels as meander structures to the left
and the right of the quantum ring. (b) Microscopic photo-
graph of the sample as indicated in (a).
(c) Atomic force
microscope image of the quantum ring. (d,e) Schemes of the
measurement setups (not to scale) for (d) local and (e) non-
local heating via Ih and noise measurement Vx.
the sample was segmented into discrete resistors account-
ing for the individual Ohmic parts of the sample, which
were determined experimentally by lock-in measurements
at the different bath temperatures.
Noise spectra were recorded for bath temperatures in
the range of Tbath = 1.4 - 10 K and different local and
nonlocal heating currents for a frequency range of 1 Hz to
20 kHz. A recorded voltage noise spectrum SV (f ) results
from an average of typically 700 sets of data.
In order to obtain the thermal noise of a heating chan-
nel SV,h or the equivalent electron temperature Te from
the total noise spectrum, we analyzed the data as follows:
(a) In order to take parasitic capacities Cpar into account,
the measured noise SV,m(f ) was corrected by a first-order
low-pass SV (f ) = SV,m(f )(1 + (2πRCpar)2). We deter-
mined Cpar = 800 nF and 565 nF from experiments with
and without the heating circuit attached, respectively.
(b) The total white noise SV,w was extracted as the aver-
age value of SV (f ) in a frequency range, where no 1/f -
noise was visible, i.e.
from f = 15 kHz to 19.25 kHz.
(c) We subtracted noise contributions of Ohmic contacts
and the wide 2DEG leads SV,Ω, the heating circuitry
SV,hc, and the preamplifiers SV,amp by comparison of
SV,w(Ih (cid:54)= 0) with SV,w(Ih = 0). SV,amp results from
(a)(b)ABCVxIhVxIh(a)VxIhVxIh(c)(d)20 µmheater Iheater IIquantum ring(b)2 µm1234(d)(e)20 µmheater Iheater IIquantumring(b)2 µm1234(a)(c)VxIhVxIhALT:(b)(a)ABCABC32143214 the finite current noise of the preamplifiers.
All parasitic contributions S0 add to the thermal noise
of the heater SV,h:
SV,w = SV,h + S0 = SV,h + SV,Ω + SV,hc + SV,amp
3
= 4kBTeRh,eff + 4kBTbathRΩ,eff + SV,hc
+ 4kBTamp2R−1
ampR2
in,
(1)
where the latter term is valid for Rin << Ramp. Rin
is the total input resistance, and Rh,eff and RΩ,eff are
the effective heater and lead (ohmic contacts and wide
2DEG regions) resistances as seen by the preamplifiers.
The SPICE network analysis reveals that we can assume
Rh,eff ≈ Rh, RΩ,eff ≈ RΩ and Rin ≈ Rh + RΩ with
a maximum error of less than 2 %. The preamplifiers
with an input resistance of Ramp = 5 MΩ operate at
Tamp = 300 K, and the factor 2 accounts for the two
preamplifiers. At Tbath = 4.2 K we determined Rh =
6.2 kΩ and RΩ = 1.4 kΩ.
The noise contribution of the heating circuit in the lo-
cal setup was determined by the simulation as Ssim
V,hc =
0.78 · 10−18 V2/Hz, which is in good agreement with the
V,hc = 0.73 · 10−18 V2/Hz
experimental observations of Sexp
V,hc = 0.81· 10−18 V2/Hz at Tbath = 4.2 and 1.4 K,
and Sexp
respectively (see Fig. 2). With the above resistance val-
ues and Eq. 1, we expect a total white noise at 4.2 K with
the heating circuit attached in the local setup but Ih = 0
of SV,w = 2.93 · 10−18 V2/Hz, which agrees well with the
result of the full simulation SV,w = 2.91 · 10−18 V2/Hz.
III. EXPERIMENTAL RESULTS AND
DISCUSSION
The determined total white noise SV,w for different
heating currents in the local and the nonlocal setup is
shown in Fig. 2(a) for Tbath = 4.2 K and in Fig. 2(b)
for Tbath = 1.4 K. The size of the symbols represents the
measurement accuracy. We ascertained that the heater
resistance does not change with the heating current.
The inset of Fig. 2(a) depicts typical noise spectra
SV (f ) for different local heating currents after lowpass
correction. For applied heating currents, a 1/f γ depen-
dence (γ ≤ 1.3) is visible at f < 13 kHz. At higher
frequencies, white noise dominates. With increasing cur-
rent, both 1/f and white noise components increase.
Here, the 1/f noise components will not be discussed,
but we will consider the white noise component.
Fig. 2 shows the experimentally determined white noise
values Sexp
V,w in the local (filled squares and circles) and
nonlocal (empty squares and circles) heating setup, as
well as fits to the experimental data (broken lines) and
simulated Ssim
V,w values (triangles). Measured and simu-
lated data without the heating circuit attached are given
by symbols labeled A. Values labeled B and C were mea-
sured and simulated with the heating circuit attached in
the nonlocal and the local setup, respectively. The sig-
nificant increase of SV,w with the connection of the heat-
ing circuit results from the biasing resistors as discussed
FIG. 2: Measurements with parabolic fits and simulations of
the voltage noise SV,w for local and nonlocal electron heating.
(a) Data at Tbath = 4.2 K and (b) Tbath = 1.4 K. The filled
and empty symbols represent measured values for local and
nonlocal heating, respectively. The half-filled symbols (indi-
cated by A) depict measurements without the heating circuit
attached. Triangles display results from SPICE simulations,
and the broken lines are parabolic fits to the measured data.
above.
We will first discuss the data at Ih = 0. In order to
evaluate the influence of the heating circuit on the to-
tal noise quantitatively, we simulated the sample and the
measurement circuitry as a resistor network, as explained
above, and analyzed the thermal noise. All simulated
data points Ssim
V,w at A, B and C are slightly lower than
the corresponding measured values Sexp
V,w, with a maxi-
mum deviation of 8%. This systematic error corresponds
to the thermal noise of a resistance < 10 Ω at room tem-
perature and may result from parts of the measurement
setup which were not accounted for in the simulation,
such as the cables or a higher Ramp than specified. The
good agreement of Ssim
V,w shows that the SPICE
simulation is a helpful method to investigate the total
noise, as well as noise contributions of single components
of a complex resistor network.
V,w and Sexp
(a)(b)ABCVxIhVxIh(a)VxIhVxIh(c)(d)20 µmheater Iheater IIquantum ring(b)2 µm1234(d)(e)20 µmheater Iheater IIquantumring(b)2 µmr1r2r3r4(a)(c)VxIhVxIhALT:(b)(a)ABCABC 4
FIG. 3:
(a) Electron temperature Te as a function of the
heating current Ih in the local setup for Tbath = 4.2 and 1.4 K.
The symbols represent data derived from noise measurements,
whereas the lines result from parabolic fits. (b) The difference
between the electron and the bath temperature ∆Te = Te −
Tbath as a function of the dissipated power per electron Pe, for
Tbath = 4.2 and 1.4 K (local heating setup). The line results
from the parabolic fit for Tbath = 4.2 K.
By applying heating currents,
the white noise
SV,w(Ih (cid:54)= 0) increases with Ih for both local and non-
local heating at Tbath = 4.2 and 1.4 K. The parabolic
best fits in Fig. 2 (broken lines) indicate a quadratic de-
pendence ∆SV,w ∝ I 2
h. In the local heating setup, the
electrons of heater I are heated directly. In contrast, un-
der nonlocal heating, the electrons of heater I are heated
by hot electron diffusion from heater II across the quan-
tum ring. Phonon mediated contributions to heat trans-
fer were investigated in an additional device (same het-
erostructure), which possesses a gate electrode to locally
deplete the electron system between two heating chan-
nels. In this device, a noise increase under nonlocal cur-
rent heating could only be observed if the electron system
was conducting. Once the electron system was depleted,
no noise dependence on the heating current was detected.
Hence, we expect phonon mediated heat transfer to be
negligible in our devices at such low temperatures.
Fig. 3(a) depicts Te as a function of Ih for the local
heating setup, as determined from Eq. 1.
In addition
to the measurement data (symbols), parabolic fits are
displayed. In a first approximation, we observe ∆Te ∝
I 2
h, as expected for Joule heating and observed in other
GaAs/AlGaAs 2DEGs.12,26,27 For the nonlocal heating
setup, we do not attempt an analogous determination
of Te due to the unknown temperature gradient in the
narrow channel.
Commonly, the current is converted to the dissipated
power per electron Pe = I 2
hRh/(nsAh) with Ah the
In a steady state, Pe is
area of the heating channel.
taken as the net power transfer from the electrons to
the lattice Pe = Q(Te) − Q(Tlat),8,9,12,16 where Tlat is
the lattice temperature and Q denotes the energy-loss
rate. Fig. 3(b) shows the electron temperature increase
∆Te = Te − Tbath as a function of Pe in a full-logarithmic
graph for the local setup. The line gives the parabolic
fit for Tbath = 4.2 K. While ∆Te scales approximately
linearly with Pe for low heating powers, it deviates sig-
FIG. 4: Dissipated power per electron Pe as a function of
the experimentally determined electron temperature Te in the
local heating setup for Tbath = 4.2 K and 1.4 K. The broken
lines are best fits to Pe = A(T 2.2
e − T 2.2
bath).
e −T n
nificantly for Pe > 7 · 103 eV/s, since ∆Te << Tlat is no
longer satisfied, as discussed previously.12 We point out
that the temperature increase is almost independent of
the bath temperature (Tbath = 4.2 and 1.4 K). The ab-
solute electron heating in the chosen Pe-range is in good
agreement with data determined via SdH measurements
in GaAs/AlGaAs low dimensional electron systems.5,16
In order to investigate the scattering mechanisms in
the heated electron channel, we plot the experimentally
determined data for local heating as Pe(Te) in Fig. 4.
Here, the broken lines are fits to Pe = A(T n
bath) (two-
bath-model2) and yield approximately n = 2.2 for both
Tbath, and A = 985 and A = 300 eV/sK2.2 for Tbath = 4.2
and 1.4 K, respectively. For Tbath = 1.4 K, the data for
Te > 4 K deviate from the fit and were not included in the
fit. We assume Tbath = Tlat since the device is thermally
well anchored. From the exponent of T n in the two-bath-
model, information about electron-phonon interactions
can be deduced, as discussed in detail elsewhere.8,9,12
Whereas investigations of the electron energy-loss rates
in GaAs/AlGaAs 2DEGs at Tlat = 1 - 10 K by SdH mea-
surements typically yield a T 2 or T 3-dependence5,8,9, ex-
periments on the basis of QPC thermometry showed a
T 5-behavior in the same temperature regime, as well as
for temperatures in the mK-range.9,12 From the latter ex-
periments, it was deduced that the dominant scattering
mechanisms in the Gruneisen-Bloch regime are acoustic
phonon scattering via a screened piezoelectric potential9
or an unscreened deformation potential.12 n = 3 sug-
gests scattering via an unscreened piezoelectric potential.
n = 2, if diffusion to cold contacts dominates the energy
relaxation.9 n = 1 is observed in the equipartition regime
at higher temperatures of around 20 - 40 K.8
The T 2.2-dependence observed here may suggest that
electrons and phonons interact in an intermediate state
between the Gruneisen-Bloch and the equipartition
regime. However, we point out that the 2 µm wide
heating channels are particularly narrow compared with
those investigated previously. Investigations of electron-
(b)(a)ABCABC(a)(b)(b)(a)ABCABC(a)(b) phonon interactions in 2DEGs were performed in struc-
tures of typically several 10 µm width or wider.8,9,12
In GaAs based devices, structures of a width less than
roughly 1 µm show signatures of the 1D regime in trans-
port, where samples of width between 50 and 300 nm
yield clear quantized conductance at temperatures of a
few K.28,29 Structures of several µm width, on the other
hand, are distinct 2D systems whose fundamental param-
eters are investigated by SdH and quantum Hall measure-
ments. A system of 2 µm width, as investigated here, re-
veals its 2D character in simple transport measurements
since the subband separation of its 1D energy states is in
the range of tens to hundreds of µeV and thus below the
thermal smearing. However, the density of states may be
slightly altered toward 1D characteristics, similar to the
low-filed SdH effect. One signature for a 2D regime close
to the transition to 1D is the decreased electron density
in the narrow heating channels compared to wide 2D re-
gions, as described in Sec. II.
For 1D systems, a reduction of the power law exponent
n in the Gruneisen-Bloch regime was predicted30 -- 33 and
experimentally observed in etched InGaAs wires (etching
widths between 25 nm and 1 µm).17,18 Under perpendic-
ular magnetic fields, a reduction of n in a 2DEG has
been observed, and it was suggested that the momentum
transfer of electron-phonon interactions was restricted
due to Landau Levels.9 In analogy to this magnetic con-
finement of the electron-phonon interactions, in 1D sys-
tems the electronic confinement with its associated mod-
ification of the density of states could restrict electron
scattering and thus modify the temperature dependence
of electron-phonon interactions.31,32 In the etched, nar-
row heating channels investigated here, this effect may
play a role. We exclude a significant contribution to
the energy relaxation by the wide 2DEG leading to the
Ohmic contacts since the heating channel length exceeds
the hot electron diffusion length. However, the system-
atic investigation of the energy-loss rate dependence on
the channel width, ranging from wide 2D- to narrow 1D-
systems, remains a prospect for future experiments.
For the investigation of the impact of nonlocal cur-
rent heating on decoherence, we applied a heating current
in one heating channel and detected the decoherence by
AB measurements in the quantum interferometer. The
sample was cooled down in a dilution refrigerator to the
base temperature of Tbath = 20 mK. Noise measure-
ments could not be performed in this cryostat. While
driving the dc heating current Ih through heater I, we
measured the quantum ring's four-terminal resistance
R41,32 = V32/I41 by lock-in technique as a function of
the perpendicular magnetic field B, exploiting the AB
interference effect.34 -- 36
Fig. 5(a) shows the oscillatory part of the magnetore-
sistance R41,32 for three different Ih after subtraction of
the background resistance. For all traces, the resistance
oscillates regularly with B with an h/e-period, in accor-
dance to the quantum ring geometry. It is noteworthy
that the oscillation phase does not change for all applied
5
FIG. 5:
Aharonov-Bohm interference measurements and
analysis under current heating through heater I. (a) Oscil-
latory part of the four-terminal magnetoresistance R41,32 for
different heating currents Ih, offset for clarity. (b) Interfer-
ence visibility v as a function of Ih. The error amounts to
about ±0.3%. R41,32 was measured in a perpendicular mag-
netic field B at Tbath = 20 mK.
Ih, i.e. phase rigidity is not lifted by current heating
in this setup.36 With increasing Ih, the oscillation am-
plitude decreases until the AB oscillations are fully sup-
pressed for Ih > 1.2 µA.
The AB oscillation visibility v = (Rmax −
Rmin)/(Rmax + Rmin) is plotted as a function of Ih
in Fig. 5(b). The approximately linear decrease of v
with Ih in the semi-logarithmic graph suggests the re-
lation v(Ih) = v0 exp(−αhIh) = v0 exp(−L/Lφ), with αh
the fitting parameter, L the mean length of the inter-
ferometer arms, and Lφ the electron phase breaking
length.34,36
Under an applied heating current through heater I,
hot electrons are created in this reservoir next to the
quantum wire interferometer, and a temperature differ-
ence between the two heat baths (channel 1 and 2) is
invoked (thermal gradient). This leads to the diffusion
of hot electrons across the quasi-1D structure, which
raises the local electron temperature in the interfero-
meter. Previous works have investigated electron dephas-
ing in quasi-1D AB interferometers by an increase of the
lattice temperature and have shown the relation v(Tlat) =
v0 exp(−αT Tlat), which leads to Lφ ∝ T −1
lat .34 -- 36 Here, we
find Lφ ∝ I−1
h , in analogy, and conclude that dephasing
with Ih is induced by the elevated electron temperature
in the interferometer via increased electron-electron scat-
tering and thermal averaging.34 -- 36
IV. SUMMARY
In conclusion, we have applied voltage noise thermom-
etry to a particularly narrow 2D GaAs/AlGaAs elec-
tron system at bath temperatures of 4.2 and 1.4 K.
Electrons were heated by the application of a dc cur-
rent, and the thermal noise was measured in a cross-
correlation setup. The device consists of two heating
channels (heat baths) with a quasi-1D quantum inter-
ferometer in-between. We performed local noise measure-
ments in the directly heated channel and nonlocal mea-
surements in the indirectly heated channel, and we found
(b)(a)ABCABC(a)(b)(a)(b) 6
the same functional dependence of the thermal noise on
the heating current in the local and the nonlocal heating
setup. The indirect heating is explained by hot electron
diffusion through the quasi-1D interferometer. The tem-
perature dependence of the electron energy-loss rate of
T 2.2 is lower than that observed in previous investiga-
tions at 2DEGs. This may result from the confinement of
the electron system to a narrow 2DEG with a slightly al-
tered density of states evoking restrictions in phase space
of electron-phonon interactions. We demonstrate that
an indirect current heating can be successfully employed
as a means to establish thermal gradients between heat
baths connected to (quasi-) 1D quantum circuits. The
effect of indirect current heating on the electron deco-
herence in the quantum interferometer was investigated
by Aharonov-Bohm measurements, and an exponential
decay of the visibility with an increasing heating current
was observed.
Acknowledgments
The authors gratefully acknowledge financial sup-
port from the Deutsche Forschungsgemeinschaft (DFG)
within the priority program SPP1386. S.F.F. is grate-
ful for support from the 'Junges Kolleg,' North Rhine-
Westphalia Academy for Sciences and Arts. D.R. and
A.D.W. acknowledge support from the DFG SPP1285
and the BMBF QuaHL-Rep 01BQ1035. We greatly ap-
preciate the scientific and technical support from Prof.
U. Kunze.
∗ electronic address: sven.buchholz@physik.hu-berlin.de
† electronic address: saskia.fischer@physik.hu-berlin.de
1 K. Nielsch, J. Bachmann, J. Kimling, and H. Bottner,
Adv. Engery Mater. 1, 713 (2011).
2 A. K. M. Wennberg, S. N. Ytterboe, C. M. Gould, H. M.
Bozler, J. Klem, and H. Morkoc, Phys. Rev. B 34, 4409
(1986).
3 H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, and K. W.
West, Phys. Rev. B 41, 1278 (1990).
4 A. Mittal, R. G. Wheeler, M. W. Keller, D. E. Prober,
Lett. 81, 727 (2002).
18 C. Prasad, D. K. Ferry, and H. H. Wieder, Semicond. Sci.
Technol. 19, S60 (2004).
19 M. L. Roukes, M. R. Freeman, R. S. Germain, R. C.
Richardson, and M. B. Ketchen, Phys. Rev. Lett. 55, 422
(1985).
20 M. Henny, H. Birk, R. Huber, C. Strunk, A. Bachtold,
M. Kruger, and C. Schonenberger, Appl. Phys. Lett. 71,
773 (1997).
21 T. A. Eckhause, O. Sulzer, C. Kurdak, F. Yun,
and
and R. N. Sacks, Surf. Sci. 361/362, 537 (1996).
H. Morkoc, Appl. Phys. Lett. 82, 3035 (2003).
5 K. Hirakawa and H. Sasaki, Appl. Phys. Lett. 49, 889
22 A. Kumar, L. Saminadayar, D. C. Glattli, Y. Jin, and
(1986).
B. Etienne, Phys. Rev. Lett. 76, 2778 (1996).
6 S. J. Manion, M. Artaki, M. A. Emanuel, J. J. Coleman,
23 R. T. Syme, M. J. Kelly, and M. Pepper, J. Phys.: Con-
and K. Hess, Phys. Rev. B 35, 9203 (1987).
7 Y. Ma, R. Fletcher, E. Zaremba, M. D'Iorio, C. T. Foxon,
and J. J. Harris, Phys. Rev. B 43, 9033 (1991).
8 for a review see: B. K. Ridley, Rep. Prog. Phys. 54, 169
(1991).
9 N. J. Appleyard, J. T. Nicholls, M. Y. Simmons, W. R.
Tribe, and M. Pepper, Phys. Rev. Lett. 81, 3491 (1998).
10 L. W. Molenkamp, H. van Houten, C. W. J. Beenakker,
R. Eppenga, and C. T. Foxon, Phys. Rev. Lett. 65, 1052
(1990).
11 O. Chiatti, J. T. Nicholls, Y. Y. Proskuryakov, N. Lump-
kin, I. Farrer, and D. A. Ritchie, Phys. Rev. Lett. 97,
056601 (2006).
12 Y. Y. Proskuryakov, J. T. Nicholls, D. I. Hadji-Ristic,
and C. B. Sorensen, Phys. Rev. B 75,
A. Kristensen,
045308 (2007).
13 A. A. M. Staring, L. W. Molenkamp, B. W. Alphenaar,
H. van Houten, O. J. A. Buyk, M. A. A. Mabesoone,
C. W. J. Beenakker, and C. T. Foxon, Europhys. Lett.
22, 57 (1993).
14 R. Scheibner, H. Buhmann, D. Reuter, M. N. Kiselev, and
L. W. Molenkamp, Phys. Rev. Lett. 95, 176602 (2005).
15 E. A. Hoffmann, H. A. Nilsson, J. E. Matthews,
and
N. Nakpathomkun, A. I. Persson, L. Samuelson,
H. Linke, Nano Lett. 9, 779 (2009).
16 C. Kurdak, D. C. Tsui, S. Parihar, S. A. Lyon,
and
M. Shayegan, Appl. Phys. Lett. 67, 386 (1995).
17 T. Sugaya, J. P. Bird, D. K. Ferry, A. Sergeev, V. Mitin,
K.-Y. Jang, M. Ogura, and Y. Sugiyama, Appl. Phys.
dens. Matter 1, 3375 (1989).
24 B. L. Gallagher, T. Galloway, P. Beton, J. P. Oxley, S. P.
Beaumont, S. Thoms, and C. D. W. Wilkinson, Phys. Rev.
Lett. 64, 2058 (1990).
25 M. Sampietro, L. Fasoli, and G. Ferrari, Rev. Sci. Instrum.
70, 2520 (1999).
26 L. W. Molenkamp and M. J. M. de Jong, Phys. Rev. B 49,
5038 (1994).
27 S. Maximov, M. Gbordzoe, H. Buhmann, L. W.
Molenkamp, and D. Reuter, Phys. Rev. B 70, 121308(R)
(2004).
28 A. Kristensen, J. B. Jensen, M. Zaffalon, C. B. Sorensen,
S. M. Reimann, and P. E. Lindelof, J. Appl. Phys. 83, 607
(1998).
29 G. Apetrii, S. Fischer, U. Kunze, D. Reuter, and A. Wieck,
Semicond. Sci. Technol. 17, 735 (2002).
30 U. Bockelmann and G. Bastard, Phys. Rev. B 42, 8947
(1990).
31 A. Y. Shik and L. J. Challis, Phys. Rev. B 47, 2082 (1993).
32 S. Das Sarma and V. B. Campos, Phys. Rev. B 47, 3728
(1993).
33 S. S. Kubakaddi, Phys. Rev. B 75, 075309 (2007).
34 A. E. Hansen, A. Kristensen, S. Pedersen, C. B. Soorensen,
and P. E. Lindelof, Phys. Rev. B 64, 045327 (2001).
35 K.-T. Lin, Y. Lin, C. C. Chi, J. C. Chen, T. Ueda, and
S. Komiyama, Phys. Rev. B 81, 035312 (2010).
36 S. S. Buchholz, S. F. Fischer, U. Kunze, M. Bell, D. Reuter,
and A. D. Wieck, Phys. Rev. B 82, 045432 (2010).
|
1004.4913 | 3 | 1004 | 2010-08-28T08:10:27 | A six degree of freedom nanomanipulator design based on carbon nanotube bundles | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"physics.atm-clus"
] | Scanning probe imaging and manipulation of matter is of crucial importance for nanoscale science and technology. However, its resolution and ability to manipulate matter at the atomic scale is limited by rather poor control over the fine structure of the probe. In the present communication, a strategy is proposed to construct a molecular nanomanipulator from ultrathin single-walled carbon nanotubes. Covalent modification of a nanotube cap at predetermined atomic sites makes the nanotube act as a support for a functional "tool-tip" molecule. Then, a small bundle of nanotubes (3 or 4) with aligned ends can act as an extremely high aspect ratio parallel nanomanipulator for a suspended molecule, where protraction or retraction of individual nanotubes results in controlled tilting of the tool-tip in two dimensions. Together with the usual SPM three degrees of freedom and augmented with rotation of the system as a whole, the design offers six degrees of freedom for imaging and manipulation of matter with precision and freedom so much needed for advanced nanotechnology. A similar design might be possible to implement with other high-aspect ratio nanostructures, such as oxide nanowires. | cond-mat.mes-hall | cond-mat | A six degree of freedom nanomanipulator design based on
carbon nanotube bundles
Vasilii I Artyukhov
Institute of Biochemical Physics, Russian Academy of Sciences
Kosygin st. 4, Moscow, 119334 Russia
E-mail: artyukhov@sky.chph.ras.ru
Abstract. Scanning probe imaging and manipulation of matter is of crucial importance for
nanoscale science and technology. However, its resolution and ability to manipulate matter at
the atomic scale is limited by rather poor control over the fine structure of the probe. In the
present communication, a strategy is proposed to construct a molecular nanomanipulator
from ultrathin single-walled carbon nanotubes. Covalent modification of a nanotube cap at
predetermined atomic sites makes the nanotube act as a support for a functional ―tool-tip‖
molecule. Then, a small bundle of nanotubes (3 or 4) with aligned ends can act as an
extremely high aspect ratio parallel nanomanipulator for a suspended molecule, where
protraction or retraction of individual nanotubes results in controlled tilting of the tool-tip in
two dimensions. Together with the usual SPM three degrees of freedom and augmented with
rotation of the system as a whole, the design offers six degrees of freedom for imaging and
manipulation of matter with precision and freedom so much needed for advanced
nanotechnology. A similar design might be possible to implement with other high -aspect
ratio nanostructures, such as oxide nanowires.
PACS: 81.16.Ta, 82.37.Gk, 81.16.-c, 68.37.Ef, 89.20.Kk
1. Introduction
Scanning probe imaging and manipulation of matter crucially relies on the quality of tips,
specifically, on their aspect ratio, which determines the spatial resolution, and their wearing
behavior, which determines the reliability and lifetime of a probe. From this point of view, carbon
nanotubes (particularly, single-wall nanotubes [1, 2]) are the ideal candidate due to their small and
uniform diameter and extremely strong graphitic bonds between constituent atoms. Moreover,
carbon nanotubes can be either semiconducting or metallic, and the latter is crucial for scanning
tunneling microscopy and related atomic manipulation techniques.
Immediately after the first demonstration of carbon nanotube usage as scanning microscope probes
in 1996 [3], the field literally exploded with various applications and modifications of the
technology. Lithography with carbon nanotubes was demonstrated in 1998 [4]. Manipulation of
nanoscale objects by multiple-nanotube devices was achieved as early as 1999 [5], promptly
followed by fabrication of nanostructures via controlled deposition of specific length segments of the
nanotube tips [6]. Covalently functionalized carbon nanotube tips were used to demonstrate scanning
chemical force microscopy [7] and chemically sensitive tunneling microscopy [8]. Magnetic force
microscopy can be performed using carbon nanotubes functionalized with magnetic metal
nanoclusters [9]. Pristine and chemically modified carbon nanotube tips have earned their place as an
important tool for scanning probe microscopy in both physical [10] and biological science [11].
However, their application is still limited by various factors: on one hand, the difficulties of
positioning and attachment of nanotubes to tips complicate the process of tip fabrication and
attachment of the nanotube to the cantilever is often not too reliable, which makes conventional
silicon probe technology more practical for most current applications where the extreme aspect ratio
of the probe offered by nanotubes is not absolutely essential; on the other hand, there exist
fundamental issues such as the fact that the exact type of grown nanotubes is hard to control, and the
spatial unpredictability of covalent functionalization, meaning that it is impossible to tell in advance
the exact location of the functional group or molecule. In the following, a strategy is proposed to
circumvent the latter problem, which ultimately results in the proposal of a novel family of nanoscale
parallel manipulators with two extra degrees of freedom compared to the traditional scanning probe
technology, hoping that projected gains from such tools can outweigh the associated short-term
practical difficulties and stimulate further research effort to mitigate these problems .
2. Nanomanipulator design
2.1. Functionalization of nanotubes at predetermined sites: the isolated pentagon rule
It is well known that in order to form a closed surface, an sp2 carbon nanostructure must contain 12
pentagons that create positive surface curvature; therefore, a hemispherical nanotube cap contains 6
pentagons. The angle of an equilateral pentagon is 108°, which deviates strongly from the optimal
value of 120° for sp2 hybridization of carbon, and is in fact closer to the 109.5° value that is typical
for tetrahedral sp3 hybridization. Therefore, an atom that belongs to two or three pentagons at the
same time is ―forced‖ into an sp3-like state by this geometrical strain, which creates effectively
unpaired electron density at the atom. Such an atom would be prone to become engaged in addition
reactions so that its chemical environment builds up to an sp3 tetrahedron.
This result is well-known as the ―isolated pentagon rule‖ (IPR). It explains why the smallest stable
fullerene is C60, and it only exists in the truncated-icosahedron C60 isomeric form that obeys the IPR
(i.e., all pentagons are separated by hexagons). Smaller fullerenes , such as the C20 dodecahedron
containing only pentagons, demonstrate poor stability; at the same time, the dodecahedrane molecule
(C20H20) is stable.
Figure 1. (6,0) nanotube caps made from the C28 fullerene: (a-d) construction of the
fullerene starting from three pentagons sharing a common atom; (e) cutting the fullerene
into two caps and insertion of a (6,0) nanotube segment inbetween. The upper cap
contains the three-pentagon cluster.
Since C60 is the smallest fullerene that has isomers obeying the IPR, any nanotube with a diameter
smaller than 0.68 nm (the diameter of C60) will inevitably contain edge- or vertex-sharing pentagons
in its cap. These sites will be the most chemically active, making them prime candidates for chemical
functionalization. We can further imagine a situation where a nanotube cap contains a unique most
preferred spot for covalent functionalization; for this, we need to recall the structure of the C28
fullerene, which contains four clusters of three pentagons sharing a vertex (Td point symmetry
group). The clusters are linked by common pentagon edges. The process of constructing a C28
fullerene is shown in four steps starting from our cluster of interest in figure 1 (a–d). The final
structure can be sliced in half so that two (6,0) nanotube caps are formed; this is shown in figure 1
(e), where a segment of the nanotube has been inserted between the halves. The upper fragment has a
threefold rotational axis (C3v group), while the symmetry of the lower is sixfold (C6v).
Since no experimental data exist on the geometry of caps (or whether at all caps can be stable) in
such small-diameter nanotubes, the question of which of the two possible cap structures is the correct
one has to be addressed using quantum chemical calculations. The relative stability of the two
different cap structures can be roughly judged from the deformation energies of corresponding
fullerenes that are made by joining two caps of each type. The upper cap structure corresponds to
one of the isomers of C44, the lower corresponds to C36. Calculations (see table 1) show that our cap
structure is preferred for the (6,0) nanotube since it minimizes the energy per atom: it has one atom
in the most unfavorable position possible—shared by three pentagons—but this is overcompensated
by there being fewer edge-sharing pentagons (3 common edges instead of 6). It should also be noted
that the ―bottom‖ cap can be converted into a ―top‖ cap by adding 4 carbon atoms. The data in table
1 demonstrate that the energies-per-atom of such caps come quite near to that of the (stable) C60
fullerene; chemical functionalization of the tip atom should be expected to substantially stabilize the
C3v cap structure even further.
Table 1. Relative energies of possible (6,0) nanotube caps.
Binding energy per atom (kJ/mol)a
Fullerene
C28 (figure 1d)
C36 (two C6v caps [12])
C40 (one cap of each type)
C44 (two C3v caps)
–671.3
–691.3
–691.4
–695.8
C60
–720.0
a Calculations were performed using the PBE density functional [13]
with an optimized triple-zeta Gaussian basis set.
Thus, the (6,0) carbon nanotube is the perfect candidate for use as a chemically functionalized probe
since its cap contains a single site, referred to as the ―tip atom‖ in the following, that is especially
susceptible to chemical functionalization. The diameter of this nanotube is 0.47 nm, suggesting a
very favorable aspect ratio. Incidentally, this tube is metallic, meaning that the operation of the
functional group at the tip could be controlled by applied voltage. Another point to note with regard
to the (6,0) nanotube is its good lattice match with the (111) diamond surface [14], suggesting the
use of diamond cantilevers to support the nanotubes. As for other nanotube types, the complete
inventory of carbon nanotube cap structures (up to a diameter of 3 nm) available in the literature [15]
should facilitate the search for other systems that offer at least partial site-specificity of chemical
functionalization and hence could be used in other designs resembling the present.
To conclude the section dedicated to the isolated pentagon rule, it should be noted that substitution of
carbon with nitrogen, in a sense, reverses the IPR. The nitrogen atom has an extra electron compared
to carbon, and therefore, instead of an effectively unpaired electron, a nitrogen atom shared by three
pentagons presents a lone pair. Such a configuration is, in fact, preferential for N-substituted
fullerenes [16]. This means that in a capped (6,0) nanotube, a nitrogen atom would predominantly
occupy the position at the very tip. While this would actually prevent covalent functionalization of
the nanotube at the tip, the nitrogen atom could form a dative bond with, e.g., a boron atom, opening
up broad possibilities for reversible assembly and disassembly of complex architectures with boron -
substituted carbon nanostructures or with boron nitride structures. Finally, similar arguments should
generally hold for boron substitution of nanotubes, i.e., boron atoms should also predominantly
occupy the tip position in a capped (6,0) nanotube.
2.2. Parallel nanomanipulators based on nanotube bundles
While site-specific functionalization of carbon nanotubes may be interesting for imaging and
manipulation of matter at the scale of individual atoms, the above strategy becomes effectively
useless if deterministic manipulation of multi-atom molecules is required: free rotation of the grafted
molecule about the sp3 bond would render null all the efforts to lock it into the desired location.
However, this problem can be solved by simultaneously attaching the molecule to three (or more)
nanotubes forming a bundle.
As an illustration, an adamantane molecule attached to a bundle of three capped (6,0) nanotubes is
shown in figure 2 (a). This molecule was chosen for its tetrahedral shape giving it three natural
linking sites and a fourth that remains free for subsequent modification. The relatively small size of
the molecule means that intermediary linkers are required. A number of possible linking
configurations using carbon, silicon, germanium, oxygen and sulfur atoms were tested; from these,
alkane chains with three carbon atoms (i.e., propane) appear to be most suitable, long enough to
make up for the small size of the molecule compared to the gap between nanotube tips, but not too
long so that the molecule is kept in place tightly.
Figure 2. Carbon nanotube bundles covalently grafted with (a) an adamantane molecule
and with (b) a carbon dimer deposition tool based on two face-joined adamantane
molecules. Dative attachment is also possible (c, d). Boron and nitrogen atoms are
shown in green and blue, respectively; violet represents germanium.
It is also immediately seen that in such a configuration, relative protraction or retraction of individual
nanotubes can tilt the molecule with two angular degrees of freedom. The nanotubes in the bundle
are kept together by attractive dispersion forces, but the relative sliding should be easy. Therefore,
three-site grafting of the functional molecule, in fact, converts a simple probe into a full-fledged
parallel nanomanipulator (see figure 3).
Another reason why adamantane has been chosen as the molecule of interest in the present study is
the recent proposal of a minimal toolset for positionally controlled diamond mechanosynthesis by
Freitas and Merkle [17]. Among the 9 proposed functional molecules (―tooltips‖), 7 represent
adamantane molecules with appropriate substitutions of either hydrogen or carbon at one vertex of
the molecule, and yet another one is basically a combination of two such tooltips. The final member
of the set is the dimer placement tool (DimerP) [18, 19] based on two face-joined Ge-substituted
adamantane molecules (this corresponds to a diamond crystal twin boundary) shown in figure 2b
suspended on four (6,0) nanotubes. In this case, the molecule connects to the inner nanotubes via
cyclopentane rings; furthering the twin boundary analogy, each ring can be viewed as dual propane
chains sharing one end and joined at the other.
Examples of the same two molecules linked via dative B–N bonds are also provided in figure 2 (c,
d). Notice that while adamantane is supported on three nitrogen-substituted nanotube caps, the mirror
symmetry of the DimerP molecule would cause problems if boron substitution were to be used in the
cyclopentane rings; however, using two boron-substituted nanotubes solves the problem. In these
systems, the functional molecules are bound less strongly than in the covalent case. On the other
hand, tooltips can be changed relatively easily. One can immediately see that it is straightforward to
use various combinations of boron/nitrogen substitutions to design complementary tools that bind
selectively to their intended counterparts, which might turn out useful in future complex
architectures.
Figure 3. Angular flexibility of the manipulator: (a) starting position; (b) one nanotube
protracted by ca. 0.5 nm; (c) another nanotube protracted by ca. 0.2 nm. The
corresponding strain energies are listed in table 2.
Although a detailed technical assessment of the performance of the manipulators in terms of range of
motion, positional and angular uncertainty, etc. is beyond the scope of the present communication,
some estimate of the amount of strain present in the systems is nevertheless needed to check if these
structures could at all exist. Strain energies were (very roughly) estimated using the MM2 molecular
mechanics force field [20], and the results are summarized in table 2. It can be seen that, although a
certain amount of strain is present in all structures, it is insufficient to cause bond rupture, especially
considering the fact that it is distributed over 3 (for adamantane) or 4 (for DimerP) links. This also
means that bond configurations in the structures are not too unusual, and the use of molecular
mechanics (avoiding expensive quantum-chemical calculations) is justified in this case. In summary,
these results show that the designs in figure 2 may be feasible, at least from the thermodynamical
point of view, and should work as expected (figure 3).
Table 2. Strain energy estimates.
Energy (kJ/mol)a
Structure
Adamantane (untilted)
Adamantane (tilted, figure 3b)
Adamantane (tilted, figure 3c)
DimerP (untilted)
232
280
260
307
Typical alkane C-C bond strength
350
a Energies are listed with respect to nonfunctionalized
nanotube bundles and molecules with pre-attached linkers.
3. Discussion
3.1. Implementation pathways
Before the implications of the above designs can be discussed, possible strategies of fabricating the
proposed structures have to be reviewed. This includes synthesizing the required components and
assembling them into a working system.
As of present, carbon nanotube probes are typically grown in situ on SPM tips using some variation
of chemical vapor deposition process [21], with the possibility of even wafer-scale fabrication [22].
However, CVD-grown nanotubes typically have diameters > 1 nm, which is too large for our
purposes, and their type is hard to control precisely. On the other hand, ultrathin SWCNTs down to
0.4 nm diameter can be selectively grown inside zeolite pores [23–26], or inside larger diameter
CNTs [27] with the possibility of controlling the type of as-grown nanotube by the choice of catalyst
type and external conditions [28]. The inner tube could subsequently be extracted from the resulting
double-wall nanotube by mechanical means (so-called ―sword-in-sheath‖ failure of the outer wall)
[29] or, for example, using electrical current heating [30]. Even if the nanotubes are grown
uncapped, it should nevertheless be possible to close their ends; on-demand capping of carbon
nanotubes has previously been demonstrated, at least, for multiwall carbon nanotubes [31].
Given all the difficulties of fabrication and processing of ultrathin carbon nanotubes, it might be
desirable to use nanocones [32] or conically-terminated multiwall nanotubes, since these structures
can have very sharp tips [33] with clusters of pentagons. Although chemical modification of
nanocones is much less explored compared to nanotubes, quantum chemical calculations [34]
suggest that functionalization of nanocones should occur predominantly at the tip, offering at least
some spatial control over functionalization. Finally, it should be noted that perfect control over the
functionalization site is not an absolute necessity: techniques such as field emission measurements
with a second movable probe [35] could in principle be utilized to determine functional group
position after the functionalization has been carried out, thus enabling the use of other carbon
nanostructures besides the (6,0) nanotube.
Individual as-grown carbon nanotubes will then have to be transferred onto separate actuators, and
their free ends joined together to form a self-supporting bundle. Although in principle, just one
degree of freedom per actuator should be sufficient—provided that the tubes are long enough (or the
actuators close enough) so that they can be joined using an additional 3-dof manipulator,—assembly
would be most easily done if all actuators had three degrees of freedom. This suggests the use of a
three-probe scanning microscope design for the first demonstrations of the devices; it should then be
noted that in the present case, steric hindrance constraints that plague conventional multiprobe
instrument design are somewhat relaxed, because the probes only need to approach each other to a
certain distance (determined by the length of the nanotubes); nor need they be parallel or coplanar,
providing additional design flexibility to reduce steric congestion.
After the bundle has been formed, for example, DNA hairpins [36] could be used to make a ―knot‖
clipping the bundle together and allowing individual nanotubes to be routed to their independent
actuators, although it is quite probable that it would be sufficient to simply rely on the mutual
attraction of carbon nanotubes. Any excess length of the nanotubes could be trimmed in situ with,
e.g., an electron beam [37].
Covalent functionalization of carbon nanotubes is a well-established procedure, and, as long as there
exists a preferred spot of functionalization on the nanotube, no insurmountable obstacles are to be
expected from this side. Similarly, organic synthesis methods are more than capable of producing
molecules with appropriate linkers attached, as long as a desired functional molecule has been
chosen. The possibility of successful synthesis of particular tooltip molecules discussed above has
already been addressed in the corresponding references.
Given the freedom to choose the functional groups on both sides—nanotube tips and the
molecules—it appears that the rest (putting the functionalized molecule on a pre-assembled
functionalized nanotube bundle) is also within the reach of scanning probe manipulation
technologies.
3.2. Design variations
In the above, only three degrees of freedom of the systems have been explicitly considered, namely,
those associated with the vertical (along the bundle axis) translations of individual nanotubes. These
correspond to the vertical translation of the system as a whole and two Euler angles. Three more
degrees of freedom that have to be introduced ‗externally‘ are two horizontal translations and the
rotation about the bundle axis. These could be split between the manipulator and the substrate,
hopefully providing some room to simplify manipulator design. Moreover, one nanotube could be
kept fixed to save some complexity on its actuator: the nanotube actuators appear to be the most
troublesome spot of the whole system since they have to be made both very small and very precise,
and transferring this degree of freedom to the substrate or to manipulator suspension could be very
helpful from the engineering point of view. Alternatively, nanotube ends could be statically anchored
on a single platform having two ―tilt‖ degrees of freedom. Overall, given the recent progress in the
design of complex and precise nanomanipulators (including multistage systems [38]) and multiprobe
instruments, it appears that one or another solution to these problems could be found in the near
future.
A greater range of angular flexibility could be achieved by placing nanotubes at an angle to each
other instead of the parallel bundle alignment discussed above. In fact, such a setup could remove the
need for long floppy alkane chains to link small molecules (figure 4a), or, at least, allow one to use
shorter and simpler linkers (figure 4b). This flexibility, however, would have to come at a substantial
additional expense: first, much more precise control of individual nanotubes would be required;
second, the resulting pyramidal shape would increase the effective volume of the system and cause
additional steric hindrance, which may be critical in certain cases.
Figure 4. An adamantane molecule suspended on three converging nanotubes (a)
directly and (b) via simple ester (C-O-C) bridges.
It should also be noted that the 4-nanotube design shown in figure 2b has one additional degree of
freedom that corresponds to movement of outer and inner nanotube pairs in opposing directions. This
corresponds to stretching or compression of the grafted molecule. In the present case, this effect
could possibly be utilized to additionally enhance the reliability of dimer transfer either from the tool
or onto the tool (when recharging), although the high stiffness of the tip molecule would probably
preclude any substantial effect. More sophisticated designs could put this additional degree of
freedom to use in mechanically controlled chemical reactions, or in even finer mechanical
manipulation of individual molecules.
As an alternative to carbon nanotubes, other atomically-precise structural elements could be used.
Recent examples include silica (0.3-0.4 nm) [39] and titania (0.4-0.5 nm) [40] nanowires. Such
structures may even possess certain advantages over carbon nanotubes, such as piezo- or
ferroelectricity, as well as there being fewer competing sites of possible covalent functionalization,
making the assembly of complex architectures easier. Finally, besides stiff nanotubes and nanowires,
more flexible chainlike structures might be utilized in future designs to build bendable manipulators.
Fullerene–carbyne composite chains are one possible example [41].
4. Conclusions
The present communication describes a class of nanoscale parallel manipulators based on carbon
nanotube bundles. The manipulators offer precise control over the position and orientation of
individual molecules, thanks to the well-defined structure of constituent nanotubes and to the two
additional degrees of freedom that such systems provide, compared to regular scanning probes. An
important step is the choice of carbon nanotube type so as to achieve tip functionalization at
predictable atomic sites. Functional molecules can then be attached by either strong covalent C-C
bonds or reversible dative bonds between substitutional B and N atoms in the parts of the assembly.
The designs have been demonstrated to be thermodynamically feasible, and pathways that might
eventually lead to their practical implementation have been suggested. In particular, techniques to
extract ultrathin carbon nanotubes from zeolite pores, or some alternative methods of free-standing
ultrathin nanotube synthesis, would be desirable.
Although manipulators such as those described above can be expected to substantially improve the
spatial resolution of scanning probe microscopy, the true diversity of potential applications comes
from the various kinds of functional molecules that they can support . Even without the possibility to
actuate individual nanotubes, rigid locking of the molecules in place will enable improved control
over their position and orientation, making this approach far superior to single-nanotube imaging and
manipulation [42] in terms of both versatility and precision. Here, designs that can support all 9
tooltips from the minimal toolset for positionally controlled diamond mechanosynthesis [17] have
been provided. If built, they may serve as stepping stones from current scanning probe technology
towards more efficient autonomous positioning systems [43] required for high-throughput
deterministic manipulation of matter at the atomic scale, ultimately leading to the much anticipated
prospects of machine-phase diamond [44] and graphitic [45] nanotechnology. Although the research
into application of carbon nanotubes in scanning probe technologies appears to have slowed down
due to practical difficulties, hopefully, the benefits from the present proposal can outweigh these and
trigger further attempts to advance the needed prerequisite techniques, or stimulate the exploration of
other possible ways to produce the proposed tools, possibly including some of the alternatives
suggested in this communication.
Acknowledgments
The structures were designed with the NanoEngineer-1 package (http://www.nanoengineer-1.com/).
MM2 calculations were performed using the TINKER package (http://dasher.wustl.edu/tinker/).
Density functional calculations were performed with the Priroda program [46]. The visualization was
done using QuteMol (http://qutemol.sourceforge.net/) [47]. The author thanks D. A. Medvedev,
L. A. Chernozatonskii and I. V. Artyuhov for inspiring discussions and useful suggestions on the
proposal and the manuscript.
References:
[1] Iijima S and Ichihashi T 1993 Single-shell carbon nanotubes of 1-nm diameter Nature 384 603-5
[2] Bethune D S, Klang C H, de Vries M S, Gorman G, Savoy R, Vazquez J and Beyers R 1993 Cobalt-
catalysed growth of carbon nanotubes with single -atomic-layer walls Nature 384 605-7
[3] Dai H, Hafner J H, Rinzler A G, Colbert D T and Smalley R E 1996 Nanotubes as nanoprobes in
scanning probe microscopy Nature 384 147-50
[4] Dai H, Franklin N and Han J 1998 Exploiting the properties of carbon nanotubes for nanolithography
Appl. Phys. Lett. 73 1508-10
[5] Kim P and Lieber C M 1999 Nanotube Nanotweezers Science 286 2148-50
[6] Cheung C L, Hafner J H, Odom T W, Kim K and Lieber C M 2000 Growth and fabrication with
single-walled carbon nanotube probe microscopy tips Appl. Phys. Lett. 76, 3136-9
[7] Wong S S, Wooley A T, Joselevich E, Cheung C L and Lieber C M 1998 Covalently-Functionalized
Single-Walled Carbon Nanotube Probe Tips for Chemical Force Microscopy J. Am. Chem. Soc.
120 8557-8
[8] Nishino T, Ito T and Umezawa Y 2002 Carbon Nanotube Scanning Tunneling Microscopy Tips for
Chemically Selective Imaging Anal. Chem. 74 4275-8
[9] Arie T, Nishijima H, Akita S and Nakayama Y 2000 Carbon-nanotube probe equipped magnetic
force microscope J. Vac. Sci. Technol. B 18 104-6
[10] Nguyen C V, Chao K-J, Stevens R M D, Delzeit L, Cassell A, Han J and Meyyappan M 2001
Carbon nanotube tip probes: stability and lateral resolution in scanning probe microscopy and
application to surface science in semiconductors Nanotechnology 12 363-7
[11] Woolley A T, Cheung C L, Hafner J H and Lieber C H 2000 Structural biology with carbon
nanotube AFM probes Chemistry & Biology 7 R193-204
[12] Gal'pern E G, Stankevich I V, Chistyakov A L and Chernozatonskii L A 1992 Atomic and electronic
structure of the barrelenes b—Cm with m = 36 + 12n. JETP Lett. 55 483-6
[13] Perdew J P, Burke K and Ernzerhof M 1996 Generalized Gradient Approximation Made Simple
Phys. Rev. Lett. 77 3865-8
Perdew J P, Burke K and Ernzerhof M 1997 Phys. Rev. Lett. 78 1396
[14] Shenderova O A, Areshkin D and Brenner D W 2003 Carbon Based Nanostructures: Diamond
Clusters Structured with Nanotubes Mater. Res. 6 11-7
[15] Brinkmann G, Fowler P W, Manolopoulos D E and Palser A H R 1999 A census of nanotube caps
Chem. Phys. Lett. 315 335-47
[16] Ewels C 2006 Nitrogen Violation of the Isolated Pentagon Rule Nano Lett. 6 890-5
[17] Freitas Jr R A and Merkle R C 2008 A minimal toolset for positional diamond mechanosynthesis J.
Comput. Theor. Nanosci. 5 760-861
[18] Merkle R C and Freitas Jr R A 2003 Theoretical analysis of a carbon-carbon dimer placement tool
for diamond mechanosynthesis J. Nanosci. Nanotechnol. 3 319-324
[19] Freitas Jr R A, Allis D G and Merkle R C 2007 Horizontal Ge-Substituted Polymantane-Based C2
Dimer Placement Tooltip Motifs for Diamond Mechanosynthesis J. Comput. Theor. Nanosci. 4
433-442
[20] Allinger N L 1977 Conformational analysis. 130. MM2. A hydrocarbon force field utilizing V1 and
V2 torsional terms J. Am. Chem. Soc. 99 8127
[21] Hafner J H, Cheung C L and Lieber C M 1999 Direct Growth of Single -Walled Carbon Nanotube
Scanning Probe Microscopy Tips J. Am. Chem. Soc. 121 9750-1
[22] Yenilmez E, Wang Q, Chen R J, Wang D, Dai H 2002 Wafer scale production of carbon nanotube
scanning probe tips for atomic force microscopy Appl. Phys. Lett. 80 2225-7
[23] Hulman M, Kuzmany H, Dubay O, Kresse G, Li L and Tang Z K 2003 Raman spectroscopy of
template grown single wall carbon nanotubes in zeolite crystals J. Chem. Phys. 119 3384-90
[24] Munoz E, Coutinho D, Reidy R F, Zakhidov A, Zhou W, Balkus K J 2004 Synthesis of DAM-1
molecular sieves containing single walled carbon nanotubes Microporous and Mesoporous Mater.
67 61-65
[25] Guo K, Yang C, Li Z M, Bai M, Liu H J, Li G D, Wang E G, Chan C T, Tang Z K, Ge W K and
Xiao X 2004 Efficient Visible Photoluminescence from Carbon Nanotubes in Zeolite Templates
Phys. Rev. Lett. 93 017402(4)
[26] Lortz R, Zhang Q, Shi W, Ye J T, Qiu C, Wang Z, He H, Sheng P, Qian T, Tang Z, Wang N, Zhang
X, Wang J and Chan C T 2008 Superconducting characteristics of 4-Å carbon nanotube–zeolite
composite Proc. Nat. Acad. Sci. 106 7299-303
[27] Shiozawa H, Pichler T, Grüneis A, Pfeiffer R, Kuzmany H, Liu Z, Suenaga K and Kataura H 2008 A
Catalytic Reaction Inside a Single-Walled Carbon Nanotube Adv. Mater. 20 1443-49
[28] Shiozawa H, Silva S R P, Liu Z, Suenaga K, Kataura H, Kramberger C, Pfei ffer R, Kuzmany H and
Pichler T 2010 Catalyst and Diameter Dependent Growth of Carbon Nanotubes Determined
Through Nano Test Tube Chemistry XXIVth International Winterschool on Electronic Properties
of Novel Materials: abstract book p 157
[29] Yu M-F, Lourie O, Dyer M J, Moloni K, Kelly T F and Ruoff R S 2000 Strength and Breaking
Mechanism of Multiwalled Carbon Nanotubes Under Tensile Load Science 287 637-640
[30] Kim K, Sussman A and Zettl A 2010 Graphene Nanoribbons Obtained by Electrically Unwrapping
Carbon Nanotubes ACS Nano 4 1362-6
[31] de Jonge N, Doytcheva M, Allioux M, Kaiser M, Mentink S A M, Teo K B K, Lacerda R G and
Milne W I 2005 Cap Closing of Thin Carbon Nanotubes Adv. Mater. 17 451-5
[32] Ge M and Sattler K 1994 Observation of fullerene cones Chem. Phys. Lett. 220 192-6
[33] Chen I-C, Chen L-H, Ye X-R, Daraio C, Jin S, Orme C A, Quist A and Lal R 2006 Extremely sharp
carbon nanocone probes for atomic force microscopy imaging Appl. Phys. Lett. 88 153102(1-3)
[34] Trzaskowski B, Jalbout A F and Adamowicz L 2007 Functionalization of carbon nanocones by free
radicals: A theoretical study Chem. Phys. Lett. 444 314-8
[35] Baylor L R, Merkulov V I, Ellis E D, Guillorn M A, Lowndes D H, Melechko A V , Simpson M L
and Whealton J H 2002 Field emission from isolated individual vertically aligned carbon
nanocones J. Appl. Phys. 91 4602-6
[36] Müller K, Malik S and Richert C 2010 Sequence-Specifically Addressable Hairpin DNA−Single-
Walled Carbon Nanotube Complexes for Nanoconstruction ACS Nano 4 649–56
[37] Akita S and Nakayama Y 2002 Length Adjustment of Carbon Nanotube Probe by Electron
Bombardment Jpn. J. Appl. Phys. 41 4887-9
[38] Heeres E C, Katan A J, van Es M H, Beker A F, Hesselberth M, van der Zalm D J and Oosterkamp T
H 2010 A compact multipurpose nanomanipulator for use inside a scanning electron microscope
Rev. Sci. Instrum. 81, 023704(1-4)
[39] Liu Z, Joung S-K, Okazaki T, Suenaga K, Hagiwara Y, Ohsuna T, Kuroda L and Iijima S 2009 Self-
Assembled Double Ladder Structure Formed Inside Carbon Nanotubes by Encapsulation of
H8Si8O12 ACS Nano 3 1160-6
[40] Liu C and Yang S 2009 Synthesis of Angstrom-Scale Anatase Titania Atomic Wires ACS Nano 3
1025-31
[41] Sabirov A R, Stankevich I V and Chernozatonskii L A 2004 Hybrids of carbyne and fullerene JETP
Lett. 79 121-5
[42] Dzegilenko F N, Srivastava D and Saini S 1998 Simulations of carbon nanotube tip assisted
mechano-chemical reactions on a diamond surface Nanotechnology 9 325–30
[43] Merkle R C 1997 A New Family of Six Degree Of Freedom Positional Devices Nanotechnology 8
47-52
[44] Drexler K E 1992 Nanosystems: Molecular Machinery, Manufacturing and Computation (New
York: Wiley)
[45] Globus A, Bauschlicher Jr C W, Han J, Jaffe R L, Levit C and Srivastava D 1998 Machine phase
fullerene nanotechnology Nanotechnology 9 192–9
[46] Laikov D N 1997 Fast evaluation of density functional exchange-correlation terms using the
expansion of the electron density in auxiliary basis sets Chem. Phys. Lett. 281 151-6
[47] Tarini M, Cignoni P and Montani C 2006 Ambient Occlusion and Edge Cueing for Enhancing Real
Time Molecular Visualization IEEE Transactions on Visualization and Computer Graphics 12
1237-1244
|
1006.4840 | 1 | 1006 | 2010-06-24T17:32:17 | Direct ESR evidence for magnetic behaviour of graphene | [
"cond-mat.mes-hall"
] | Recently, there have appeared theoretical works on the magnetic properties of graphene and graphene nanoribbons envisaging possible spin-based applications along with fundamental scientific insight. The theoretical efforts, however, appear not paralleled by experimental investigation to test magnetic properties. Yet, room temperature ferromagnetism (RTFM) has recently been experimentally reported in graphene (G-600) [Nano. Letters 9, 220 (2009)], the origin of which remains still unexplored. Inspired by this observation, and in attempt to trace the origin of RTFM, we here report on low temperature K-band electron spin resonance (ESR) observations on G-600. Two distinct C-related paramagnetic signals are revealed, both of a Lorentzian shape: a) a broad at g = 2.00278 which can be attributed to graphitic-like (GL) carbon; b) a narrower signal at g = 2.00288 which is associated with free radical like (FL) carbon. No other signals could be detected. We speculate that the GL ESR signal may come from the conductive {\pi}-carriers propagating in the interior of graphene sheets, while the FL ESR signal may stem from the edges of graphene sheets due to non-bonding localized electronic states. It is suggested that the long range direct/indirect exchange interaction between GL and FL C-related magnetic spin centers may lead to the reported RTFM, this pointing to C origin of the later. | cond-mat.mes-hall | cond-mat | 1
Direct ESR evidence for magnetic behaviour of graphene
S. S. Rao* and A. Stesmans
Department of Physics and INPAC-Institute for Nanoscale Physics and Chemistry,
University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
Y. Wang and Y. Chen
Institute of Polymer Chemistry, Nankai University, Tianjin 300071, School of Chemistry
and Chemical Engineering, Nanjing University, Nanjing 210093, China
Abstract
Recently, there have appeared theoretical works on the magnetic properties of
graphene and graphene nanoribbons envisaging possible spin-based applications along
with fundamental scientific insight. The theoretical efforts, however, appear not
paralleled by experimental investigation to test magnetic properties. Yet, room
temperature ferromagnetism (RTFM) has recently been experimentally reported in
graphene (G-600) [Nano. Letters 9, 220 (2009)], the origin of which remains still
unexplored. Inspired by this observation, and in attempt to trace the origin of RTFM, we
here report on low temperature K-band electron spin resonance (ESR) observations on G-
600. Two distinct C-related paramagnetic signals are revealed, both of a Lorentzian
shape: a) a broad at g = 2.00278 which can be attributed to graphitic-like (GL) carbon; b)
a narrower signal at g = 2.00288 which is associated with free radical like (FL) carbon.
No other signals could be detected. We speculate that the GL ESR signal may come from
the conductive π-carriers propagating in the interior of graphene sheets, while the FL
ESR signal may stem from the edges of graphene sheets due to non-bonding localized
electronic states. It is suggested that the long range direct/indirect exchange interaction
between GL and FL C-related magnetic spin centers may lead to the reported RTFM, this
pointing to C origin of the later.
*Corresponding author. Fax: + 32 16 32 79 87. E-mail address:
Srinivasarao.singamaneni@fys.kuleuven.be (S S Rao)
2
1. Introduction
Carbon based materials, such as graphene, graphene oxide (GO) and graphene
nanoribbons (GNRs) have recently attracted large interest both from scientific and
technological point of view. In particular, graphene, a zero gap semi-metal, is
characterized as “the thinnest material in our universe” exhibiting a two-dimensional (2D)
honeycomb structure of carbon. It has a band structure showing two intersecting bands at
two inequivalent k points in the reciprocal space. It exhibits novel electronic properties
such as ballistic
transport, massless Dirac fermions, Berry’s phase, minimum
conductivity and localization suppression [1-3]. It has been reported that graphene shows
very high electron mobility (≈ 105 cm2/V.S) at low temperature [4]. It promises a diverse
range of applications in microelectronics, high speed optical communication devices, in
spintronics, and as room temperature gas sensors [5-8].
On the other hand, magnetism in C-based materials is a rapidly evolving field of
research with strong implications for spin based information technology. C-based
magnetism without magnetic elements, having only s and p electrons is intriguing,
particularly, when extracted from graphene, a material touted as the basis unit for future
spintronic devices owing to its long spin diffusion length, small spin-orbit (SO) as well as
hyperfine (hf) couplings [9]. Understanding the origin and basic mechanism behind the
magnetic behaviour of C-based materials and engineering ferromagnetic (FM) carbon
structures has been of prime importance since long. In their theoretical work, Yazyev et
al. [7] have concluded that flat-band quasi localized (QL) states induced by point defects
are responsible for magnetism of graphene. Lin et al. [10] have argued the importance of
electron-electron interaction and carrier concentration in explaining the FM properties of
3
GNRs. Theoretical calculations of Sawada et al. [11] indicated that zig-zag GNRs
(ZGNRs) exhibit anti-ferromagnetic (AFM) phase and also argued that magnetism can be
induced by carrier doping. Lehtinen et al. [12] have calculated that the magnetic moment
due to an adatom defect is 0.5µ B, µ B being the Bohr magneton while a vacancy has a
magnetic moment of about 1µ B, with both defects prone to induce spontaneous long-
range FM ordering. In fact, a defective graphene is predicted [13] to show room
temperature ferromagnetism (RTFM). A FM phase of mixed sp2 and sp3 pure carbons has
been predicted [14].
FM has been observed experimentally by Esquinzai et al. [15] on the highly
oriented pyrolytic graphite (HOPG) material with a Tc above 300 K when proton
irradiated, and unstable (temporary) FM was observed [16] in light-weight carbon nano-
foam also, − the works indicating the origin of the magnetism to be carbon related, not
correlated with any external magnetic impurity. Recent experiments [17] have shown that
proton irradiation doubles the magnetic moment in comparison to that observed after He
ion bombardment. Recent experiments [18] employing magnetic force microscopy (MFM)
and scanning tunneling microscopy (STM) techniques performed on HOPG sample
revealed that 2D networks of point defects exhibiting localized electronic states are the
main source of magnetism.
As described above, though there have been several experimental studies on
HOPG exploring its magnetic nature, not much experimental work [19,20] has been
reported to investigate the magnetic nature of graphene, a building block of HOPG.
Theoretical predictions suggested that the edges and defects present in graphene enhance
the DOS, which further leads to a FM phase. As predicted, the later exhibits a phase
4
transition from the FM to paramagnetic (PM) state, that is of first order [21]. Such
predictions would need experimental verification.
Wang et al. [22] have recently experimentally reported the RTFM in graphene (G-
600) by using DC superconducting quantum interference device (SQUID) magnetization
measurements. Its origin still remains unexplored. Motivated by this observation, in the
present work, we first apply electron spin resonance (ESR) in an attempt to identify
paramagnetic (spin) point defects potentially responsible for RTFM in G-600. We present
ESR results obtained on samples (G-600), in the pristine state and after annealing in Ar at
800oC (G-800) or H2 at 600oC (H-G-600). The study reveals the occurrence of two
distinct, intrinsic C-related types of defects both exhibiting a Lorentzian shape. From this
observation, together with the absence of any other signals, it is tentatively suggested the
RTFM to be of C origin.
2. Experimental
Samples studied were nm-scale graphene, denoted as G-600, prepared by the
modified Hummer’s method [22]. Separate samples were additionally annealed at 800o C
in Ar (1 atm) for ~ 3 h (sample G-800) or (1 atm) at 600o C for ~ 2 h (sample H-G-600).
Conventional K-band (~20.6 GHz) first harmonic ESR measurements were
performed at low temperature (T ≤ 10 K) [23], with the spectrometer routinely operated
under conditions of adiabatic slow passage. The areal spin density was quantified by the
double numerical integration of the derivative absorption spectra of the computer
simulated signal. Absolute spin densities were obtained making use of a co-mounted
calibrated Si:P intensity marker of g(1.7 K = 1.99876). The modulation amplitude (Bm) of
the applied magnetic field and the incident microwave power (Pµ ) were restricted to
levels not causing (noticeable) signal distortion. No K-band measurements could be
5
performed for T ≥10 K because of drastic deterioration of the quality factor ‘Q’ of the
microwave cavity likely due to the strong semiconducting nature of the graphene samples.
3. Experimental Results and Analysis
Atomic absorption spectroscopy (AAS) indicated that G-600 does not contain
significant amounts (~ 48.6 ppm) of magnetic impurities (Fe, Co, Ni). DC magnetization
measurements were performed on G-600 and G-800 using the SQUID technique by
sweeping the magnetic field (H) at fixed Ts of which the first results were published
previously [22]. Salient features include: The magnetization (M) versus field (H)
isotherms on the pristine sample (G-600) obtained at 2 and 300 K clearly show a
tendency towards saturation, with a small coerceive field (Hc) of 40 G (at 300 K), which
is a signature of FM; the hysteresis (M-H loop) associated with G-600 is feeble, as
expected for a soft FM material. The M-H loop of G-600 was found to disappear upon
TA at 800oC (G-800) in Ar. Wang et al. [22] have concluded that the observed RTFM
originates from the defects present in G-600. But, a most critical point concerns the
nature of the defects causing the long-range FM coupling. For this end, to get in sight,
we have applied ESR in an attempt to uncover the magnetic species (defects) giving rise
to the appearance and disappearance of FM in G-600 and G-800, and address the possible
mechanisms leading to FM. In the following sections, we present the K-band ESR results
obtained on G-600, G-800 and H-G-600.
3.1. G-600
Figure 1 shows a K-band (~ 20.6 GHz) ESR spectrum observed on G-600 at 1.7 K.
Two symmetric, isotropic ESR signals are observed of zero–crossing g values gc =
2.00278 and gc = 2.00288 with corresponding spin densities 1× 1016 spins/g and 7 × 1013
6
spins/g, respectively. These g values fall within the carbon ESR signal range (g = 2.0022
– 2.0035), and may be ascribed to C-related dangling bonds of spin S = ½ each. Despite
intense signal averaging over broad field ranges under various extreme and optimized
spectrometer parameter settings, no other signals could be observed. The signals could be
computer simulated using Lorentzian line shapes with: a) a broad signal of peak-to-peak
width ∆BPP ≈ 80-100 G at g = 2.00278, which can be attributed to graphitic-like (GL1)
carbon; b) a narrower signal with ∆BPP ~ 4.5 G, g = 2.00288, attributed to free radical
like (FL1) carbon. The fact that no other signals could be detected suggest that the RTFM
is of C origin. We speculate that the GL1 ESR signal may come from the mobile π-
carriers propagating in the interiors of graphene sheets, while the FL1 ESR signal may
stem from non-bonding localized states at the edges of graphene sheets. Similar
assignment has been made earlier [24] for the ESR signal originating from graphitic like
pyrocarbon. To probe deeper, Q-band ESR spectroscopy was attempted, yet without
success (even at low temperatures) because of resonator problems.
3.2. G-800
Wang et al. [22] have shown that FM has disappeared in G-800, which in view of the
results obtained on G-600, would make ESR analysis of much interest. Accordingly, K-
band ESR measurements have been carried out on G-800 down to1.8 K. The obtained
spectrum is shown in Fig 2. Measurements at higher temperatures ( ≥ 4.2 K) were
drastically hampered due to excessive cavity loading. As illustrated by the ESR spectrum
observed at 1.8 K, no ESR signal could be detected originating from G-800, either
intrinsic or extrinsic in nature. This result suggests that the disappearance of FM after TA
at 800o C, may be linked to elimination of ESR active centers [22].
3.3. H-G-600
7
To further assess the nature of the above revealed defects (GL1 and FL1), in a
next step, G-600 was treated in H2 at 600o C, Fig. 3 showing a K-band ESR spectrum
(upper curve) measured on H-G-600. Though the observed signals weakened, we keep
observing two Lorentzian shaped signals. The estimated spin densities of GL2 and FL2
are 2 × 1014 and 3 × 1012 spins/g, respectively through computer simulations (bottom
curve). Yet, both signals, now labeled GL2 and FL2, appear broadened by a factor ≈ 2
and ≈ 3, respectively, compared to the respective signals observed in G-600; (∆BPP(GL2)
= 160-170 G, ∆BPP(FL2) = 15 G), with inferred g values gc (GL2) = 2.0028 and gc(FL2)
= 2.00296, that is, unchanged within the experimental accuracy (± 0.0003). Noteworthy
is that in the case of H-G-600, the loading of the cavity by the sample has been drastically
reduced, indicating that the electronic properties of G-600 are much modified upon H2
treatment.
4. Discussion
We speculate that the GL ESR signal arises from the conductive π-carriers
propagating in the interiors of graphene sheets, while the FL ESR signal may stem from
non-bonding localized electronic states at the edges of graphene sheets. We further
propose that the long range direct/indirect exchange interaction between GL and FL C-
related magnetic spin centers may lead to the observed RTFM. Previously, various forms
of hydrogen-adsorbed defects have been suggested as possible origin of localized
magnetic moments. The current results, with no obvious presence of hyperfine (hf)
structure, can be taken as negative evidence for that suggestion.
8
The findings of Wang and co-authors [22] are well corroborated by our current ESR
results in terms of the appearance and disappearance of ESR signals in G-600 and G-800
respectively. The ESR data would disqualify the extrinsic metallic impurities as the
possible origin of RTFM. From the ESR results, we also infer that the proposed defect is
not a di-vacancy, as no forbidden ESR transition, a characteristic feature of spin S=1
centers, could be traced.
The question of magnetic ordering in defective graphene at finite temperatures
remains largely unaddressed. Regarding the mechanism for the formation of the FM state
in G-600, among others, the defect mediated mechanism appears to be the favored one.
The single atom and localized defect mediated mechanism has been addressed in a
number of publications. The current results, reporting the presence of two paramagnetic
centers, may suggest such interpretation, meriting some further discussion as to the
possible origin of FM in G-600: (i) as known, graphene is a bipartite lattice with two
interpenetrating sub-lattices. According to Lieb’s theorem [25], a single vacancy (defect)
results in the formation of a local magnetic moment with S = 1/2. From the theoretical
calculations, it is known that magnetic moments pertaining to the same sublattice couple
ferro-magnetically while moments pertaining to different sub-lattices couple anti-
ferromagnetically. Clearly, the later case does not apply here. Based on the fact that FM
is observed in G-600, one may argue that the magnetic moments present in the same sub-
lattice would give rise to such a phenomena. (ii) Next, it may also be proposed that the
RKKY-type interaction [26] among the magnetic moments via conduction carriers
present in the same sub-lattice can also lead to FM features. (iii) It may also be possible
that the interaction between sp2 and sp3 type spin units can give rise to the reported FM
9
[14].(iv) Finally, it has also been argued that the negative Gaussian curvatures in
graphene-layers [27] and weak magnetic coupling between the individual layers may lead
to the formation of localized magnetic moments [13].
According to a study [28], based on density functional theory, of magnetism in
proton-irradiated graphite, it has been concluded that the H-vacancy complex plays a
predominant role in the magnetic behaviour. Yet, as mentioned, we failed to find any
indication for such hydrogen-vacancy complexes from ESR finger print signatures. Also,
should there be unobserved unpaired electron involved on an edge oxygen, an anisotropic
g value is expected which would reflect in the observation of powder pattern line shapes,
unlike observations.
5. Summery and Conclusions
Low temperature electron spin resonance measurements have revealed the
presence of two distinct paramagnetic C-related spin centers in graphene prepared by the
modified Hummer’s method, which were found to be eliminated after thermal annealing
at 800 oC. Among the suggested possible scenarios for the onset of ferromagnetism in
graphene-related materials, we believe that the observed RTFM may originate either from
the direct/indirect long range exchange interaction between these two spin centers or
through an RKKY type interaction between spin centers pertaining to the same C-
sublattice. Our ESR experimental results lead us to reject FM impurities as the origin of
the observed magnetism. ESR experiments in combination with thermal treatment (Ar,
H2) indicate that the possibility for tuning the magnetization in graphene by thermal steps.
A dramatic change in conductivity is noticed upon treatment in H2. Further work is in
10
progress to probe the nature of spin dynamics of the revealed defect centers using X-band
spectroscopy.
References
11
[1] A. K. Geim and K. S. Novoselov, Nat. Mater. 6 (2007) 183.
[2] A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, Rev.
Mod. Phys. 81(2009) 109.
[3] Y. Zhang, J. W Tan, H. L. Stormer and P. Kim, Nature 438 (2005) 201.
[4] K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim and
H. L. Stormer, Solid State Commun. 146 (2008) 351.
[5] P. Avouris, Z. Chen and V.Perebeinos. Nature Nanotech. 2 (2007) 605.
[6] T. Mueller, F. Xia and P. Avouris, Nature Photonics 4 (2010) 297.
[7] O. V. Yazyev and M. I. Katsnelson, Phys. Rev. Lett. 100 (2008) 047209.
[8] F. Schedin, A. K. Geim, S. V. morozov, E. W. Hill, P. Blake, M. I.
Katsnelson and K. S. Novoselov, Nature Materials, 6 (2007) 652.
[9] N. Tombros, S. Tanabe, A. Veligura, C. Jozsa, M. Popinciuc, H. T. Jonkman and B. J.
van Wees, Phys. Rev. Lett. 101 (2008) 046601.
[10] H. H. Lin, T.Hikihara, H-T. Jeng, B-L Huang, C-Y Mou and X. Hu, Phys. Rev. B.
79 (2009) 035405.
[11] K. Sawada, F. Ishii, M. Saito, S. Okada and T. Kawai, Nano Lett. 9 (2009) 269.
[12] P.O. Lehtinen, A. S. Foster, A. Ayuela, A. Krasheninnikov, K. Nordlund and R.M.
Nieminen, Phys. Rev. Lett. 91 (2003) 017202.
[13] L. Pisani, B. Montanari and N. M. Harrison, New J. Phys. 10 (2008) 033002.
[14] D. Arčon , Z. Jagličič , A. Zorko , A. V. Rode , A. G. Christy , N. R. Madsen, E. G.
Gamaly and B. L. Davies, Phys. Rev. B 74 (2006) 014438, and references there in.
[15] P. Esquinazi, D. Spemann, R. Hohne, A. Setzer, K.-H. Han, T. Butz,
Phys.Rev. Lett. 91 (2003) 227201.
12
[16] A. V. Rode, E. G. Gamaly, A. G. Christy, J. G. F. Gerald, S. T. Hyde, R. G. Elliman,
B. L-Davies, A. I. Veinger, J. Androulakis and J. Giapintzakis, Phys. Rev. B 70
(2004) 054407
[17] D. Spemann, K.-H. Han, P. Esquinazi, R . Hohne and T. Butz, Nuc. Inst. and Meth.
in Phys. Res. B 219 (2004) 886.
[18] J. Cervenka, M. I. Katsnelson and C. F. J. Flipse, Nature Physics 5 (2009) 840.
[19] H. S. S. Ramakrishna Matte, K. S. Subrahmanyam and C. N. R. Rao, J. Phys. Chem.
C 113 (2009) 9982.
[20] Luka
iri *, Andrzej Sienkiewicz *, Bálint Náfrádi, Marijana Mioni , Arnaud
Magrez, László Forró, Phys. Status Solidi B 246 (2009) 2558.
[21] E. V. Castro, N. M. R. Peres, T. Stauber and N. A. P. Silva, Phys. Rev. Lett. 100
(2008) 186803
[22] Y. Wang, Y Huang, Y. Song, X. Zhang, Y. Ma, J. Liang and Y. Chen, Nano. Lett. 9
(2009) 220.
[23] A. Stesmans. Phys. Rev. B 48 (1993) 2418.
[24] C. Buschhaus and E. Dormann, Phys. Rev. B 66 (2002) 195401.
[25] E.H. Lieb, Phys. Rev. Lett. 62 (1989)1201.
[26] M. A. H.Vozmediano, M.P. L-Sancho, T. Stauber, F. Guinea, Phys. Rev. B
72 (2005)155121.
[27] N. Park, M. Yoon, S. Berber, J. Ihm, E. Osawa, and D. Tom´anek, Phys. Rev. Lett.
91 (2003) 237204.
[28] P. O. Lehtinen, A. S. Foster, Y. Ma, A. V. Krasheninnikov and R. M. Nieminen,
Phys. Rev. Lett. 93 (2004) 187202.
Figure Captions
13
FIG. 1. Derivative-absorption K-band ESR spectrum (~ 50 cumulative scans) observed at
1.7 K on G-600 using Bm = 0.5 G and Pµ ≈ 2.5 nW. The dashed curve (bottom) represents
a computer simulation (combined) of the observed signals at gc (GL1) = 2.00278 and gc
(FL1) = 2.00288 of the corresponding peak-to-peak line widths ∆BPP (GL1) = 80-100 G
and ∆BPP (FL1) = 4.5 G. The narrow signal at gc = 1.99876 stems from a co-mounted
Si:P marker sample. Poor signal-to-noise ratio is due to strong loading the Q factor of the
cavity.
FIG. 2. K-band ESR spectrum measured on G-800 at 1.8 K (Bm = 0.5 G and Pµ = 2.5
nW). There is no indication of a C-originated ESR signal.
FIG. 3. K-band ESR spectrum (top curve) observed at 1.7 K on H-G-600 using Bm = 0.5
G and Pµ = 2.5 nW. The small low field signal might arise from noise. The dashed curve
(bottom) represents a computer simulation of the observed signal at gc (GL2) = 2.0028
and gc (FL2) = 2.00296.
Figures
FIG. 1.
14
FIG. 2.
15
16
FIG. 3.
|
1612.03995 | 1 | 1612 | 2016-12-13T02:05:17 | Magnetic Bloch Skyrmion Transport by Electric Fields in a Composite Bilayer | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | We investigate a mechanical method to manipulate magnetic Bloch Skyrmions by applying an electric field in a composite chiral-magnetic (CM)/ferroelectric (FE) bilayer. The magnetoelectric coupling at the interface allows the electric field to stimulate magnetic ordering. Therefore it offers the possibility to generate Skyrmions [Phys. Rev. B 94, 014311 (2016)]. Here, we design a movable and localized electric field source to drive skyrmion transport along the bilayer. A traveling velocity of the electric field source must be carefully chosen to show the stability and effciency of this process. The effects of high speed operation will be discussed. | cond-mat.mes-hall | cond-mat |
Magnetic Bloch Skyrmion Transport by Electric Fields in a Composite Bilayer
Zidong Wang∗ and Malcolm J. Grimson†
Department of Physics, University of Auckland, Private Bag 92019, Auckland, New Zealand
(Dated: October 9, 2018)
We investigate a mechanical method to manipulate magnetic Bloch Skyrmions by applying an
electric field in a composite chiral-magnetic (CM)/ferroelectric (FE) bilayer. The magnetoelectric
coupling at the interface allows the electric field to stimulate magnetic ordering. Therefore it offers
the possibility to generate Skyrmions [Phys. Rev. B 94, 014311 (2016)]. Here, we design a movable
and localized electric field source to drive Skyrmion transport along the bilayer. A traveling velocity
of the electric field source must be carefully chosen to show the stability and efficiency of this process.
The effects of high speed operation will be discussed.
Introduction. - Magnetic Bloch Skyrmions have been
introduced theoretically [1, 2] and observed experimen-
tally [3, 4] in many works. They occurs in materials which
the magnetic order breaks the centrosymmetric nanos-
tructure due to the existence of asymmetric exchange
interaction (well-known as the Dzyaloshinskii-Moriya in-
teraction). Magnetic Skyrmions have been detected ex-
perimentally from the range of MnSi [3], FeGe [5], MnGe
[6], GaV4S8 [7], Cu2OSeO3 [8], Fe-Co-Si alloys [9] and
Mn-Fe-Ge alloys [6]. They offer a great potential for ap-
plications in spintronic memory devices, due to their self-
protection behavior. To use magnetic Skyrmions as in-
formation holders, the current high interest is to control
their motion. Several non-mechanical methods have been
investigated, such as by using electric current dynamics
[10], spin-polarized currents [11, 12], magnetic fields [13],
temperature gradients [14, 15], and magnons [16]. But
a mechanical method, however, has not been explored.
In this paper, a mechanical technique to move magnetic
Bloch Skyrmions collinearly with a mobile electric field
source is investigated.
A previous
study has discussed magnetic Bloch
Skyrmions induced by the electric field in a composite
bilayer in Ref. [17]. Here, we pursue a microscopic ap-
proach to Skyrmion transport by moving the electric field
source in a plane parallel to the bilayer. In FIG. 1, we
(i) construct a bilayer lattice model, which contains a
chiral-magnetic (CM) layer with classical magnetic spins
and a ferroelectric (FE) layer with electric pseudospins,
both of layers are glued by a strong magnetoelectric
(ME) coupling, (ii) attach a localized electric field source,
which can travel longitudinally along the bilayer film, (iii)
carry out a spin dynamics method to determine the time-
response behaviors of the magnetic spins and the electric
pseudospins, respectively. Movie 1 in the Supplemen-
tal Material shows an animation of the dynamics [18].
The results show the creation and propagation of mag-
netic Bloch Skyrmions, and we discuss the stability and
efficiency of the traveling velocity to Skyrmions. This
mechanical technique provides a guide for designing and
developing a Skyrmion transport channel in future spin-
tronic devices.
Model and Simulation. - The total Hamiltonian is con-
FIG. 1. A schematic illustration of a composite bilayer con-
sisting of a CM layer and a FE layer stacked at the interface.
A localized electric field source can be moved longitudinally
along the bilayer.
structed by effective Hamiltonians in the CM and FE
layers and the interfacial interaction, as: H = HCM +
HFE + HME. Firstly, the Hamiltonian in CM layer HCM
is described by a classical Heisenberg model, as
HCM = −JCM
[Si,j · (Si+1,j + Si,j+1)]
−DCM
[Si,j × Si+1,j · x + Si,j × Si,j+1 · y]
(cid:88)
(cid:88)
(cid:88)
i,j
i,j
−KCM
(Sz
i,j)2,
(1)
i,j
i,j, Sy
i,j, Sz
where Si,j = (Sx
i,j) represents the local mag-
netic spin is used to characterize the magnetic moment,
i.e., (cid:107)Si,j(cid:107) = 1, and
which is a normalized vector,
i, j ∈ [1, 2, 3, ..., N ] characterizes the location of each
spin in the CM layer. The first term shows the symmet-
ric exchange interaction between neighbor spins, where
J∗
CM = JCM/kBT represents the dimensionless magnetic
exchange coupling. The second term shows the asym-
metric exchange interaction, and D∗
CM = DCM/kBT
represents the dimensionless Dzyaloshinskii-Moriya co-
efficient, with x and y are the unit vectors of the
x and y axes, respectively. Weak magnetocrystalline
anisotropy exists in CM materials [19]. In general, the
last term shows a perpendicular magnetic anisotropy,
with K∗
CM = KCM/kBT representing the dimensionless
uniaxial anisotropy coefficient along the z axis.
k,l, P z
k,l, P y
In the FE layer, we employ a pseudospin model to solve
the dynamical behaviors of electric polarization [20]. The
local electric moment is replaced by the pseudospin,
shown as Pk,l = (P x
k,l), which is regarded as
a continuous vector, and k, l ∈ [1, 2, 3, ..., N ] character-
izes each pseudospins location. The distinction between a
pseudospin and a classical spin, is the variable size and no
precession of the pseudospin. Since the electric polariza-
tion is defined as the dipole moment density in dielectric
materials. The dipole moment density p is proportional
to the external electric field, as p = 0χeEext [21]. In the
pseudospin model, the size of each electric pseudospin
is proportional to the magnitude of its effective field, as
(cid:107)Eeff
k,l = δH/δPk,l(cid:107) [22]. Hence, (cid:107)Pk,l(cid:107) = 0Ξe(cid:107)Eeff
k,l(cid:107),
where Ξe is the dimensionless pseudo-scalar susceptibil-
ity. Consequently, the electric pseudospin has a variable
size as does the behavior of electric dipole. The Hamilto-
nian thus be described by a transverse Ising model [23],
as
[P z
k,l(P z
k+1,l + P z
k,l+1)]
(cid:88)
(cid:88)
k,l
HFE = −JFE
−ΩFE
(P x
k,l)
(cid:88)
k,l
−0χeEz
ext
P z
k,l,
(2)
k,l
where J∗
FE = JFE/kBT represents the dimensionless
electric exchange coupling along the Ising z direction.
Ω∗
FE = ΩFE/kBT represents the dimensionless transverse
field along the +x axis, which is a in-plane field and per-
pendicular to the Ising z direction. E∗
ext/kBT
represents the dimensionless electric field, which been ap-
plied in the +z direction, 0 is the electric permittivity
of free space, and χe is the dielectric susceptibility. A
particular site of locations k, l presents the pseudospins
which in the presence of electric field. Remember that
applied electric field is mobile, and spatially attached to
the bulk of bilayer film to reduce the edge effects (i.e.,
edge-merons) in simulations [24].
ext = 0χeEz
Interfacial effects between CM and FE layers are
caused by a ME coupling. The mechanism behind it can
be understood by a strain-stress effect. Since in ferro-
electrics, a mechanical strain internally generated from
the applied electric field due to the reverse piezoelectric
effect. It physically exerts on the CM layer, resulting in a
magnetization due to the inverse magnetostrictive effect.
Consequently, a series of electric-mechanical-mechanical-
magnetic effects constitute the converse ME effect, which
emphasizes the influence of electric polarization on the
magnetization at interface. Nan et al. have given a de-
tailed study of this behavior [25]. The analytic expres-
sion of ME effect can be linear or nonlinear, particularly
with respect to the thermal effect [26]. In this paper, we
only account for low-energy excitations between the CM
2
and FE layers and so we restrict ourselves to the linear
expression of ME interaction, as
HME = −gME
(Sz
i,jP z
k,l),
(3)
(cid:88)
(i,j)(k,l)
where g∗
ME = gME/kBT represents the dimensionless
strength of ME coupling. This was discussed by Spaldin
[27]. The ME coupling strength is, however, currently
unknown.
∂Si,j
∂t
The dynamics of magnetic spins has been studied by
the well-known Landau-Lifshitz-Gilbert equation [28],
which numerically solves the rotation of a magnetic spin
in response to its torques,
= −γCM[Si,j × H eff
i,j )],
(4)
where γCM is the gyromagnetic ratio, and λCM is the phe-
nomenological damping term of CM materials. H eff
i,j =
−δH/δSi,j is the magnetic effective field acting on each
spin, which is the functional derivative of the total Hamil-
tonian with respect to each magnetic spin.
i,j ] − λCM[Si,j × (Si,j × H eff
In the FE layer, pseudospins are used to describe the
location of electric dipoles. The electric dipole moment
is a measure of the separation of positive and negative
charges along the Ising z direction. It is scalar. There-
fore, only the z component of pseudospin represents the
real polarization, and the time evolution of pseudospins
is expected to perform a precession free trajectory [20],
as
∂Pk,l
∂t
= −λFE[Pk,l × (Pk,l × Eeff
k,l)],
(5)
CM = 1, D∗
CM = 1, K∗
FE = 0.1, g∗
ME = 0.4, γ∗
where λFE is the phenomenological damping term in the
k,l = −δH/δPk,l is the electric effective
FE structure. Eeff
field acting on each pseudospin. Movie 2 in the Sup-
plemental Material shows animations for comparing the
trajectories of magnetic spin and electric pseudospin [18].
Results. - Dimensionless parameters are used for the
numerical simulations: J∗
CM = 0.1,
J∗
FE = 0.8, Ω∗
CM = 1, and
FE = 0.1. A number of N = 30 × 90 magnetic
λ∗
CM = λ∗
spins/electric pseudospins in each layer and free bound-
ary conditions are used. Landau-Lifshitz-Gilbert equa-
tions are solved by a fourth-order Range-Kutta method.
A marginal electric field is applied to order the FE and
CM domain walls before the dynamics, then we apply the
localized electric field with a magnitude E∗
ext = 10, per-
pendicular to the surface. Electric pseudospins quickly
complete realignment, but the response of magnetic spins
has a delay. The generation process of a Skyrmion in the
bulk of CM layer is summarized in FIG. 2 (Movie 3 in
the Supplemental Material [18]). Subsequently, this field
source is moved along the bilayer with a traveling veloc-
ity. The velocity is measured as v∗ = ∆N/∆t∗, where
∆N corresponds to spatial movement to equivalent lo-
cations (i.e., spin-site), and ∆t∗ is a dimensionless time
3
FIG. 2.
Sequential snapshots present the generation of a
Skyrmion in the bulk of CM layer, as the localized electric
field is statically applied at the initial position. The color
scale represents the magnitude of the local z componential
magnetization.
step. Figure 3 shows a series of diagrams about the
Skyrmion transport in the CM layer collinearly following
the polarized pseudospins in the FE layer, for a travel-
ing velocity of v∗ = 0.02. Movie 3 in the Supplemen-
tal Material presents the full dynamical process [18]. In
this propagation process, we can see the Skyrmion track
deflecting to the bottom edge is due to the Skyrmion
Hall effect [29]. The behavior of a Skyrmion is topolog-
ically like a spinning disk, it generates a Magnus force
when traveling longitudinally. So it induces a transverse
force during the translational motion of the Skyrmion.
Figure 3 furthermore shows the electric polarization re-
flecting the passage of field source. But the magneti-
zation has a component that is non-collinear with the
electric response, and shows a spin spiral alignment, due
to the existence of a finite Dzyaloshinskii-Moriya interac-
tion. CM crystals have a non-centrosymmetric structure
enables the magnetic ordering to be broken.
The movement of the field source is externally control-
lable. We therefore explore the effects of higher traveling
speed on the Skyrmion transport. Two results of the
Skyrmion transport with different velocities are present
in FIG. 4 (Movie 4 in Supplemental Material [18]).
The first case with v∗ = 0.05 is shown in FIG. 4(a).
The Skyrmion barely struggles to follow the motion of
FIG. 3. Propagating a Skyrmion by moving the electric field
source with a velocity of v∗ = 0.02. The color scale represents
the magnitude of the z component.
field source during the propagation process. Eventually,
the system becomes much more complicated, because an-
other two Skyrmions are formed from edge-merons to
complement the energy contribution. In FIG. 4(b), we
double the velocity to v∗ = 0.1, and note the Skyrmion
been lost immediately. Furthermore, the Skyrmion Hall
effect acts in the high speed operation, and the transverse
motion of Skyrmion transport may result in its annihila-
tion at boundaries.
Conclusion.
- To summarize, we have investigated
a novel mechanical method to control magnetic Bloch
Skyrmions by moving a electric field source parallel to the
composite CM/FE bilayer system. Skyrmions are sup-
ported by the electric polarization through the converse
ME effect. The results demonstrate that the Skyrmion is
moved collinearly with the field source at a slow speed.
4
V. Tsurkan, and A. Loidl, Nat. Mater. 14, 1116 (2015).
[8] T. Adams, A. Chacon, M. Wagner, A. Bauer, G. Brandl,
B. Pedersen, H. Berger, P. Lemmens, and C. Pfleiderer,
Phys. Rev. Lett. 108, 237204 (2012).
[9] W. Munzer, A. Neubauer, T. Adams, S. Muhlbauer,
C. Franz, F. Jonietz, R. Georgii, P. Boni, B. Pedersen,
M. Schmidt, A. Rosch, and C. Pfleiderer, Phys. Rev. B
81, 041203 (2010).
[10] S. Woo, K. Litzius, B. Kruger, M.-Y. Im, L. Caretta,
K. Richter, M. Mann, A. Krone, R. M. Reeve,
M. Weigand, P. Agrawal, I. Lemesh, M.-A. Mawass,
P. Fischer, M. Klaui, and G. S. D. Beach, Nat. Mater.
15, 501 (2016).
[11] A. Fert, V. Cros, and J. a. Sampaio, Nat. Nanotech. 8,
152 (2013).
[12] J. Iwasaki, N. Nagaosa, and Y. Tokura, Nat. Nanotech.
8, 742 (2013).
[13] W. Wang, M. Beg, B. Zhang, W. Kuch, and H. Fangohr,
Phys. Rev. B 92, 020403 (2015).
[14] L. Kong and J. Zang, Phys. Rev. Lett. 111, 067203
(2013).
[15] S.-Z. Lin, C. D. Batista, C. Reichhardt, and A. Saxena,
Phys. Rev. Lett. 112, 187203 (2014).
[16] C. Schutte and M. Garst, Phys. Rev. B 90, 094423
(2014).
[17] Z. Wang and M. J. Grimson, Phys. Rev. B 94, 014311
(2016).
[18] See
Supplemental
10.13140/RG.2.2.26175.51360,
dynamical results.
Material
at
for animations about
[19] J. S. White, K. Prsa, P. Huang, A. A. Omrani,
I. Zivkovi´c, M. Bartkowiak, H. Berger, A. Magrez, J. L.
Gavilano, G. Nagy, J. Zang, and H. M. Rønnow, Phys.
Rev. Lett. 113, 107203 (2014).
[20] Z. Wang and M. J. Grimson, J. Appl. Phys. 118, 124109
(2015).
[21] C. Kittel, Introduction to Solid State Physics (Wiley,
Hoboken, NJ, 2005) Chap. 16.
[22] Z. Wang and M. J. Grimson, J. Appl. Phys. 119, 124105
(2016).
[23] P. G. de Gennes, Solid State Commun. 1, 132 (1963).
[24] X. Xing, P. W. T. Pong, and Y. Zhou, J. Appl. Phys.
120, 203903 (2016).
[25] C.-W. Nan, M. I. Bichurin, S. Dong, D. Viehland, and
G. Srinivasan, J. Appl. Phys. 103, 031101 (2008).
[26] L. Chotorlishvili, S. R. Etesami, J. Berakdar, R. Khome-
riki, and J. Ren, Phys. Rev. B 92, 134424 (2015).
[27] F. Thole, M. Fechner, and N. A. Spaldin, Phys. Rev. B
93, 195167 (2016).
[28] Y. Li, K. Xu, S. Hu, J. Suter, D. K. Schreiber, P. Ra-
muhalli, B. R. Johnson, and J. McCloy, J. Phys. D Appl.
Phys. 48, 305001 (2015).
[29] W. Jiang, X. Zhang, G. Yu, W. Zhang, M. B. Jungfleisch,
J. E. Pearson, O. Heinonen, K. L. Wang, Y. Zhou,
A. Hoffmann,
and S. G. E. te Velthuis, Nat. Phys.
(2016), 10.1038/nphys3883.
FIG. 4. High velocities effects in Skyrmion transport for (a)
v∗ = 0.05 and (b) v∗ = 0.1. The color scale represents the
magnitude of the z component magnetization.
But high traveling speeds may break the stability of
Skyrmion transport, and annihilate the Skyrmions at
edges.
Z.W. gratefully acknowledges Wang Yuhua, Zhao
Bingjin, Zhao Wenxia and Wang Feng for support.
∗ Zidong.Wang@auckland.ac.nz
† m.grimson@auckland.ac.nz
[1] U. Rossler, A. Bogdanov, and C. Pfleiderer, Nature 442,
797 (2006).
[2] N. Nagaosa and Y. Tokura, Nat. Nanotech. 8, 899 (2013).
[3] S. Muhlbauer, B. Binz, F. Jonietz, C. Pfleiderer,
A. Rosch, A. Neubauer, R. Georgii, and P. Boni, Sci-
ence 323, 915 (2009).
[4] S. Heinze, K. Von Bergmann, M. Menzel, J. Brede,
and
A. Kubetzka, R. Wiesendanger, G. Bihlmayer,
S. Blugel, Nat. Phys. 7, 713 (2011).
[5] X. Z. Yu, N. Kanazawa, Y. Onose, K. Kimoto, W. Z.
and Y. Tokura, Nat.
Zhang, S. Ishiwata, Y. Matsui,
Mater. 10, 106 (2011).
[6] K. Shibata, X. Yu, T. Hara, D. Morikawa, N. Kanazawa,
K. Kimoto, S. Ishiwata, Y. Matsui, and Y. Tokura, Nat.
Nanotech. 8, 723 (2013).
[7] I. K´ezsm´arki, S. Bordacs, P. Milde, E. Neuber, L. M.
Eng, J. S. White, H. M. Rønnow, C. D. Dewhurst,
M. Mochizuki, K. Yanai, H. Nakamura, D. Ehlers,
|
1611.00614 | 1 | 1611 | 2016-11-02T13:55:11 | Surface effects on ferromagnetic resonance in magnetic nanocubes | [
"cond-mat.mes-hall"
] | We study the effect of surface anisotropy on the spectrum of spin-wave excitations in a magnetic nanocluster and compute the corresponding absorbed power. For this, we develop a general numerical method based on the (undamped) Landau-Lifshitz equation, either linearized around the equilibrium state leading to an eigenvalue problem or solved using a symplectic technique. For box-shaped clusters, the numerical results are favorably compared to those of the finite-size linear spin-wave theory. Our numerical method allows us to disentangle the contributions of the core and surface spins to the spectral weight and absorbed power. In regard to the recent developments in synthesis and characterization of assemblies of well defined nano-elements, we study the effects of free boundaries and surface anisotropy on the spin-wave spectrum in iron nanocubes and give orders of magnitude of the expected spin-wave resonances. For an 8 nm iron nanocube, we show that the absorbed power spectrum should exhibit a low-energy peak around 10 GHz, typical of the uniform mode, followed by other low-energy features that couple to the uniform mode but with a stronger contribution from the surface. There are also high-frequency exchange-mode peaks around 60 GHz. | cond-mat.mes-hall | cond-mat | Surface effects on ferromagnetic resonance in magnetic
nanocubes
R. Bastardis1, F. Vernay1, D.-A. Garanin2 and H. Kachkachi1
1Laboratoire PROMES CNRS (UPR-8521), Université de Perpignan Via Domitia, Rambla
de la thermodynamique, Tecnosud, F-66100 Perpignan, France
2Physics Department, Lehman College, City University of New York 250 Bedford Park
Boulevard West, Bronx, New York 10468-1589, USA
E-mail: roland.bastardis@univ-perp.fr
Abstract. We study the effect of surface anisotropy on the spectrum of spin-wave excitations
in a magnetic nanocluster and compute the corresponding absorbed power. For this, we
develop a general numerical method based on the (undamped) Landau-Lifshitz equation,
either linearized around the equilibrium state leading to an eigenvalue problem or solved
using a symplectic technique. For box-shaped clusters, the numerical results are favorably
compared to those of the finite-size linear spin-wave theory. Our numerical method allows
us to disentangle the contributions of the core and surface spins to the spectral weight and
absorbed power. In regard to the recent developments in synthesis and characterization of
assemblies of well defined nano-elements, we study the effects of free boundaries and surface
anisotropy on the spin-wave spectrum in iron nanocubes and give orders of magnitude of the
expected spin-wave resonances. For an 8 nm iron nanocube, we show that the absorbed power
spectrum should exhibit a low-energy peak around 10 GHz, typical of the uniform mode,
followed by other low-energy features that couple to the uniform mode but with a stronger
contribution from the surface. There are also high-frequency exchange-mode peaks around 60
GHz.
6
1
0
2
v
o
N
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
4
1
6
0
0
.
1
1
6
1
:
v
i
X
r
a
2
Surface effects on ferromagnetic resonance in magnetic nanocubes
1. Introduction
During the last decades the development of potential technological applications of magnetic
nanoparticles, such as magnetic imaging and magnetic hyperthermia, has triggered a new
endeavor for a better control of the relevant properties of such systems. In particular, synthesis
and growth of crystalline nanoparticles have reached such a high level of skill and know-how as
to produce well defined 2D and 3D arrays of nanoclusters of tailored size, shape and internal
crystal structure [1–6]. On the other hand, experimental measurements on nanoscale systems
are a step behind inasmuch as they still do not provide us with sufficient space-time resolutions
for an unambiguous interpretation of the observed phenomena that are commonly attributed to
finite-size or surface effects. Nonetheless, ferromagnetic resonance (FMR), which is a well known
and very precise technique for characterizing bulk and layered magnetic media [7–9], benefits
from a renewed interest in the context of nanomagnetism. Indeed, some newly devised variants
of the FMR technique [10–15] combine the study of dynamic magnetic properties by FMR
with the elemental specificity of the chemical composition of the particles. For instance, these
techniques can be employed to detect the ferromagnetic resonance of single Fe nanocubes with a
sensitivity of 106µB and element-specific excitations in Co-Permalloy structures. Another variant
of ferromagnetic resonance spectroscopy is the so-called Magnetic Resonance Force Microscopy
(MRFM)[16].
It has recently been used for the characterization of cobalt nanospheres [17].
These techniques hold the prospect of providing a better resolution of the surface properties
at the level of a single (isolated) magnetic nanoparticle. For the benefits of theoretical work,
these experiments could provide the missing data for resolving the surface response to a time-
dependent magnetic field, and thus contribute to assess the validity of surface-anisotropy models.
In particular, measurements of the absorbed power in FMR experiments on "isolated" particles
or dilute assemblies of nanoparticles could serve these purposes.
Indeed, this is a standard
observable that is routinely measured in such experiments. From the theory standpoint, it is
a well known (dynamic) response of a magnetic system that can be computed by various well
established techniques, analytical as well as numerical.
In the present work we consider a box-shaped nanocluster modeled as a many-spin system
with free boundary conditions, subjected to a time-dependent (small-amplitude) magnetic field.
The systems considered here are chosen to model, to some extent, Fe nanocubes studied by
several groups [3, 5, 6, 10, 18]. Our main objective is to distinguish and assess the role of
surface and core contributions to the FMR absorption spectra. For this we focus on the simple
system of an isolated (ferromagnetic) nanocube and study its intrinsic properties, thus ignoring
its interactions with other nanocubes that would be included in an assembly and its interactions
with the hosting matrix. As shown by Sukhov et al.
[19], this assumption is fully justified
in the case of dilute samples. Obviously, real systems of magnetic nanoparticles are far more
complex. Indeed, Fe nanoparticles may present a variety of morphologies and internal structures,
especially in a core/shell configuration where one observes an antiferromagnetic layer coating a
ferromagnetic system [20–22]. However, the system we adopt is simple enough to illustrate
our study in a clear manner but rich enough to capture the main physics we are interested in.
Furthermore, the methods we develop here are quite versatile and can be extended to a given
magnetic nanoparticle with arbitrary physical parameters.
Consequently, the energy of the nanocluster considered here includes the Zeeman energy,
the (nearest-neighbor) spin-spin exchange coupling and on-site anisotropy (core and surface).
We also allow for the possibility that exchange interactions involving one or more sites in the
surface outer shell to be different from those in the core or at the interface between the core
and the surface. Upon solving the (undamped) Landau-Lifshitz equation (LLE) we compute the
absorbed power of such systems. Then, the LLE equation is linearized around the equilibrium
Surface effects on ferromagnetic resonance in magnetic nanocubes
3
state of lowest energy and the ensuing eigenvalue problem is solved to infer the full spectrum
(eigenfrequencies and eigenfunctions) of all spin-wave excitations. Finally, by comparison with
the absorbed power of a given mode, we can determine the separate contributions of core and
surface of the nanocluster.
The paper is organized as follows : in the next Section we present our model and computing
methods. We give the model Hamiltonian and then describe the two numerical methods we used
to compute the full spin-wave spectrum (eigenfrequencies and eigenvectors) and the absorbed
power.
In Section III we present and discuss our results for the effects of size and surface
anisotropy on the absorbed power. This section ends with a discussion of Fe nanocubes for
which we give orders of magnitude and speculate on the possibility to observe the calculated
peak in the absorbed power. An appendix has been added on a toy model of a three-layer
system in order to illustrate, in a simpler manner, how the various branches in the spin-wave
dispersion can be associated with spins of a given type (core or surface) in the system.
2. Model and Methods
2.1. The Hamiltonian
We model the magnetic nanocluster as a system of N classical spins si, with si = 1, with the
help of the Hamiltonian
(1)
(2)
H = Hex + Han,
where
Hex = − 1
2
(cid:88)
i,j
Jijsi · sj
is the ferromagnetic Heisenberg exchange interaction and Han the anisotropy contribution. We
assume only nearest-neighbor interactions (nn), Jij = J > 0 for i, j ∈ nn and zero otherwise.
However, we use a numerical method that allows us to consider different exchange couplings
between the core and surface spins according to their loci. More precisely, we may distinguish
between core-core (Jc), core-surface (Jcs) and surface-surface (Js) exchange coupling. The
anisotropy term in Eq. (1) is assumed to be uniaxial (along the z axis) with constant D > 0 for
core spins and of Néel's type with constant DS for surface spins. More precisely, the anisotropy
energy is local (on-site), so that Han =(cid:80)
i Han,i, and given by
−D (si · ez)2 ,
(cid:88)
j∈nn
1
2 DS
Han,i =
i ∈ core
(si · uij)2 ,
i ∈ surface.
(3)
2 DSs2
Here uij is the unit vector connecting the surface site i to its nearest neighbor on site j.
Néel's anisotropy arises due to missing nearest neighbors for surface spins. In particular, for the
simple cubic lattice and xy surfaces (perpendicular to the z axis), the Néel anisotropy becomes
Han,i = − 1
i,z. This means that for DS > 0 the spins tend to align perpendicularly to the
surface, while for DS < 0 the surface spins tend to align in the tangent plane. In a box-shaped
nanocluster the Néel anisotropy on the edges along the z axis becomes Han,i = − 1
i,x + s2
i,y
or, equivalently, Han,i = 1
for DS > 0 the edge spins tend to align
perpendicularly to the edges. On the other hand, it is easy to check that Néel's anisotropy
vanishes at the corners and in the core of a box-shaped nanocluster.
i,z. As such,
(cid:0)s2
2 DSs2
For the sake of simplicity, and for an easier comparison with experiments on iron
nanocubes, for instance, the systems investigated in the present work are boxed-shaped with
2 DS
(cid:1)
Surface effects on ferromagnetic resonance in magnetic nanocubes
4
N = Nx × Ny × Nz with a simple cubic lattice.
In this case, the surface anisotropy (SA)
favours an ordering along the shortest edges of the particle if DS > 0 and along the longest
ones otherwise.
Indeed, for an atom on the edge in the x direction, for instance, we have 4
neighbors with uij = ex, uij = −ex, uij = ey, uij = −ez and thereby (using si = 1) we obtain
Han,i → DS
2 + DS
2 s2
i,x.
2.2. Excitation spectrum and absorbed power: computing methods
Since surface anisotropy is much stronger than the core anisotropy and the fraction of surface
spins for nanoclusters is appreciable, SA strongly influences the spin-wave spectrum of the cluster.
Experimentally, the most accessible modes are the spin-wave modes that couple to the uniform ac
field, as in magnetic-resonance experiments. In the absence of SA, only the uniform-precession
mode is seen in the magnetic resonance. The effect of SA is twofold. First, the uniform (or
nearly uniform) precession frequency is modified by SA; it increases or decreases depending on
geometry. Hence, combining magnetic-resonance experiments with the corresponding theoretical
results provides a means for estimating the surface-anisotropy constant. Second, in larger clusters
exchange stiffness becomes less restrictive and different groups of spins (such as the core and
surface spins) can precess at different frequencies and this leads to several resonance peaks.
In this Section we describe two complementary methods we have used to compute the spin-
wave spectrum and the absorbed power. The first method consists in linearizing the (undamped)
Landau-Lifshitz equation (LLE) around the equilibrium position and then solving the ensuing
eigenvalue problem to obtain the eigenfrequencies and the corresponding eigenvectors (spin-
wave modes). This method is quite versatile as it can be applied to any nanocluster with
arbitrary size, shape and energy parameters. In the case of box-shaped nanoclusters this method
is compared with the results of linear spin-wave theory obtained in Refs.
[23, 24]. The second
numerical method used here consists in directly solving the LLE using the technique of symplectic
integrators [25, 26]. As will be seen later these two methods are in a very good agreement.
2.2.1. Linearization of the Landau-Lifshitz equation: normal modes of a nanocluster Here we
deal with the numerical solution of the Landau-Lifshitz equation (LLE) of motion
dsi
dt
= si × Heff,i − λ si × (si × Heff,i) ,
(4)
where the effective field is defined by Heff,i = −δsiH + gµBH(t), with g being the Landé
factor and µB the Bohr magneton, λ the dimensionless damping parameter and H(t) the time-
dependent magnetic field. In the following we set λ = 0 (Larmor equation) to avoid artificial
effects.
Internal spin-wave processes in the particle can provide a natural damping of spin
waves, especially for larger particles and non-zero temperatures. For nanosize particles, spin-
wave modes are essentially discrete [23, 24], while damping requires quasi-continuous excitation
branches to satisfy energy conservation in spin-wave processes. In addition, we do not include
thermal excitation via stochastic Langevin fields in the model. Thus we expect that the spin
wave modes of our particles are undamped. In other words, in this work, we are not seeking the
precise result for the microwave absorption. We use these calculations to find positions of spin-
wave peaks and compare them with a second approach. Our numerical experiment is short-time
whereas damping comes into play at longer times that we are not considering here.
One of the goals of the present work is to assess the role of the surface contribution to the
energy spectrum of a single nanocluster or to a given physical observable that is easily accessible
experimentally, e.g. the absorbed power. So, before we compute the relevant observable, it is
necessary to compute the eigenvectors and eigenenergies of the system. Then, it is our aim to try
to attribute the various peaks in the energy spectrum to the core or surface contributions and
(cid:110)
(cid:111)
Surface effects on ferromagnetic resonance in magnetic nanocubes
to estimate the corresponding statistical weight. The eigenvalue problem by linearizing the LLE
(4) around the equilibrium state
. This has been done in the system of spherical
coordinates in order to reduce the number of equations from 3N to 2N . The main steps of
our formalism are summarized in Appendix A. More precisely, we write δsi = si − s(0)
, for
i = 1, . . . ,N , and expand the first derivative of the energy E (or the effective field) to 1st-order
in δsi
i=1,...,N
s(0)
i
i
(cid:8)s(0)(cid:9) +
(cid:34) N(cid:80)
j=1
(cid:35)(cid:8)s(0)(cid:9) .
(δsj·∇j) Heff,i
Then, inserting this into the LLE (4) leads to
where (cid:101)Hik is the pseudo-Hessian defined in Eq. (A.4) and
j=1
dt
i = 1, . . . ,N
is a matrix that results from the vector product of si with the effective field Heff,i. The solution
of Eq. (6) can be sought in the form δsk (t) = δsk (0) exp (iωt), leading to the eigenvalue problem
Heff,i
d (δsi)
=
δsj,
(cid:104)(cid:101)HijI(cid:105)
(cid:19)
(cid:8)s(0) + δs(cid:9) = Heff,i
N(cid:88)
(cid:18) 0 −1
(cid:16)(cid:101)HijI − iω1
δsj = 0,
0
1
I ≡
N(cid:88)
j=1
(cid:17)
(cid:104)(cid:101)HijI(cid:105)αβ
5
(5)
(6)
(7)
(8)
whose solution yields the excitation spectrum of the nanocluster. Accordingly, the eigenvalue
problem (7) is then solved numerically for an arbitrary N -spin nanocluster by diagonalizing the
2N × 2N matrix with elements
. This is done in the absence of the time-dependent
magnetic field H(t) so that the effective field involved here is given by Heff,i = −δsiH.
In order to evaluate the contributions of the surface and core spins to the eigenvector (or
mode) δsk, we introduce the corresponding "spectral weight". For this purpose, we first write the
eigenvector δsk of wave vector k as
N(cid:88)
i=1
N(cid:88)
(cid:88)
1
δsk (0) =
fkiδsi (0)
(cid:104)(cid:101)HI(cid:105)
with fki are the eigenfunctions of the matrix
rewritten as
. For later use the equation above can be
δsk (0) =
i=1
α=x,y,z
Dα
kieα
i
(9)
where {ei,x, ei,y, ei,z} is the local Cartesian frame and Dα
ki are the corresponding coefficients.
Then, we may define the spectral weight (per site) associated with the core and surface spins
as follows
(cid:88)
fki2
W s,c
k =
1
N ×
Ns,c
i∈core,surface
with the normalization condition NsW s
(surface) spins.
k + NcW c
k = 1, where Nc (Ns) is the number of core
6
Surface effects on ferromagnetic resonance in magnetic nanocubes
In Ref. [24] the eigenfunctions fki were calculated analytically using the finite-size spin-wave
theory for a boxed-shaped particle. This yields a benchmark for the numerical results obtained
here and helps interpret them. The spin-wave excitations were treated perturbatively as small
deviations of the spins si from the direction n of the particle's net magnetic moment, namely
si (cid:39) n + πi, with n · πi = 0. The eigenfunctions were then obtained in the form
(fix,kx × fiy,ky × fiz,kz) πi
πk =
with
(cid:88)
(cid:114) 2
ix,iy,iz
(10)
(11)
fiα,kα =
1 + δkα
cos [(iα − 1/2) kα] , α = x, y, z
, in the case of free boundary conditions, as adopted here. Comparing Eq. (10)
and kα = nαπ
Nα
with Eq. (8) we see that the variables πk used in Ref. [24] are in fact identical to the variables
δsk defined in Eq. (8).
The normal modes of a magnetic nanocluster have been studied by many authors [see Refs.
[27, 28] and references therein]. On the other hand, the ferromagnetic resonance of ensembles of
magnetic nanoparticles in the macrospin approximation has also been studied numerically using
the Landau-Lifshitz equation [19, 29]. In the present work we use similar methods (analytical
and numerical) with the main objective here to investigate the effects of surface anisotropy on
the resonant absorption by the spin-wave modes in box-shaped nanoclusters.
2.2.2. Solution of the Landau-Lifshitz equation by symplectic methods In these numerical
calculations we set J = 1, = 1. For simplicity, we consider only cases in which the spins
in the equilibrium state are collinear and directed along the z axis. This assumes that the
surface anisotropy does not exceed a certain critical value. Typically we have D = 0.01 and
DS = 0.1. The ac field is applied along the x axis, if not stated otherwise. The results of this
method will be compared to those of the previous methods.
Among many existing solvers of systems of ordinary differential equations, we employ a
method making explicit rotations of spins around their effective fields [see Refs. [25, 26] and many
references therein]. This method conserves the spin length and, in the absence of anisotropy, it
also conserves the energy. Since anisotropy is much weaker than the exchange interaction, the
energy non-conservation is weak. The evolution operator of the system corresponding to the
time interval ∆t can be written in the exponential form
U = e L∆t,
L =
Li.
(12)
i=1
There is no explicit formula for e L∆t since the precession of one spin changes the effective
fields on the others. However, the action of the operators e Li∆t describing the rotation of an
individual spin around its effective field with all other spins frozen, can be worked out analytically.
In the absence of anisotropy this is simply the precession around a fixed field that conserves
both spin length and the energy.
In the presence of anisotropy the effective anisotropy field
changes as the spin is precessing, thus an analytical description of this precession is possible
but cumbersome. However, since the anisotropy field is much smaller than the dominating
exchange field, one can use the anisotropy field at the beginning of the interval ∆t, making only
a small error. Representing the precession of all spins in the system as a succession of individual
precessions induces errors growing with ∆t. This error can be reduced by using a generalization
N(cid:88)
Surface effects on ferromagnetic resonance in magnetic nanocubes
of the second-order Suzuki-Trotter decomposition e( A+ B)h = e Ah/2e Bhe Ah/2 + O(cid:0)h3(cid:1) that, in
7
our case, has the form
U = e L1,he L2h . . . e LN−1he LN he LN he LN−1h . . . e L2he L1h
(13)
with h ≡ ∆t/2. That is, all spins are rotated around their respective effective fields in succession
in some order. Then the procedure is repeated in the reversed order. The effective field on
the next spin is updated because of rotation of the previous spin. In the presence of a time-
dependent field, the best choice is to take the values of the latter in the middle of the two
series of successive rotations, that is, at ∆t/4 and 3∆t/4. Our implementation of this method in
Wolfram Mathematica (compiled) is rather efficient and will be confirmed by agreement between
the results obtained by Eqs. (15) and (16) for a not too small time step, typically ∆t = 0.1.
We would like to emphasize that the approaches (analytical and numerical) presented above
are complementary and render the same results for box-shaped clusters. However, the (numerical)
method presented in Section 2.2.1 is quite versatile as it allows us to compute the excitation
spectrum of a nanocluster of arbitrary shape and model Hamiltonian.
2.2.3. Definition and computing method of the absorbed power The power absorbed by a spin
system in the presence of a uniform ac magnetic field is defined as
tf
0
(cid:88)
i
Pabs (t) = − 1
tf
dt (gµB)
1
N
(cid:104)si(cid:105) (t) · dHac(t)
dt
(14)
where the integration is performed over time from the initial instant t = 0, at which all spins are
in their (initial) equilibrium state, to the final time tf . Here, (cid:104)si(cid:105) (t) ≡ Tr [ρ(t)si] where ρ is the
density matrix of the ferromagnet. Then, the response of the spin system to a time-dependent
field is defined by the difference δ (cid:104)sα
i (cid:105)0 = Tr (ρ0si), ρ0 being the
density matrix of the unpurturbed ferromagnet. However, in our calculations tf spans several
periods, i.e. tf = nT and as such, we can replace (cid:104)si(cid:105) (t) by δ (cid:104)si(cid:105) (t) since the contribution of
the constant term vanishes. Therefore, the absorbed power becomes
i (cid:105)0, with (cid:104)sα
i (cid:105) (t) ≡ (cid:104)sα
i (cid:105) (t) − (cid:104)sα
Pabs = − 1
tf
tf
0
dt (gµB)
1
N
(cid:88)
i
δ (cid:104)si(cid:105) (t) · Hac (t) .
(15)
On the other hand, since our model is conservative, the absorbed energy should also be
given by the change (per time) of the energy of the system, leading to the equivalent definition
Pabs =
1
tfN [H(tf ) − H(0)] .
(16)
We use both formulae for the absorbed power that serve as a check on the numerical calculations.
In order to clarify the expected form of the absorbed power that we will compute numerically
for magnetic nanoparticles, let us first consider the simple case of a damped harmonic oscillator
driven by an oscillating force, i.e.
x + 2Γ x + ω2
(17)
where a coupling constant ξ is introduced for generality. Solving this equation with the initial
conditions x(0) = x(0) = 0 and calculating the absorbed power for times tf = NT T , T = 2π/ω,
NT being the number of cycles, with the help of Eq. (15) [note that Eq. (16) cannot be used in
0x = ξh0 sin (ωt) ,
8
Surface effects on ferromagnetic resonance in magnetic nanocubes
the damped case], one obtains different results in different measurement time ranges. At short
times the result is that for the undamped harmonic oscillator,
1 − cos [(ω − ω0) tf ]
Pabs
h2
0
= ξ2 tf
2
(18)
The width of the corresponding peak decreases with the measurement time as ∆ω ∼ 1/tf , while
its height grows linearly with tf , so that its integrated intensity is independent of time. At long
times a Lorentzian peak is formed around the (effective) angular frequency ω0 with
[(ω − ω0) tf ]2
,
Γtf (cid:28) 1.
Pabs
h2
0
=
ξ2
2
Γ
(ω − ω0)2 + Γ2
,
Γtf (cid:29) 1.
(19)
The latter formula is what is used in magnetic resonance experiments. However, in numerical
calculations on magnetic nanoparticles it is inconvenient to perform a very long integration of
the equations of motion trying to measure damping that can be very small or zero. Eq. (18)
that requires a relatively short computation (we mainly use NT = 10) is fully sufficient in finding
the positions of resonance peaks and their intensities (parametrized by the coupling constant ξ
in the oscillator model). In contrast to the harmonic oscillator, SW modes in magnetic particles
become non-linear at high excitation thus leading to saturation and distortion of the results. For
this reason, in numerical calculations we have to use the amplitude of the ac field H0 as small
as possible without loss of precision in Eqs. (15) and (16).
In the limit of a strong exchange coupling all spins are collinear and can be considered as a
single (macro-) spin with an effective anisotropy stemming from the core and the surface. In this
approximation, the contribution of surface anisotropy is of first order in DS and depends on the
particle's shape. For the case DS > 0 and oblate particles in the xy plane, the effective SA has
an easy axis in the z direction. For prolate particles or for DS < 0 the z direction becomes a hard
axis of the effective SA. For particles of cubic (or spherical) shape the first-order contribution
of the SA cancels out. However, there is a second-order contribution ∼ D2
S/J that has a form
of cubic anisotropy and which favours an orientation of the particle's spin along the (1, 1, 1)
direction of the simple cubic lattice. Indeed, this orientation leads to the largest deviations from
the collinear state that lower the total energy [30]. Considering the precession of the macrospin
(the particle's net magnetic moment) in the effective field, to first order in DS, one obtains the
resonance frequency
ω0 = 2D
NcoreN
Nx(Ny − Nz)
Ncore
DS
D
1 +
Ny(Nx − Nz)
Ncore
DS
D
1 +
(20)
(cid:115)(cid:20)
(cid:21)(cid:20)
(cid:21)
Indeed, for the cubic shape, Nx = Ny = Nz and the effect of DS vanishes. For DS > 0 and
oblate particles (Nx, Ny > Nz) the resonance frequency increases, while for DS > 0 and prolate
particles the precession mode softens. We have not calculated the second-order effect of SA on ω0
but the form of the effective cubic anisotropy to second order in DS suggests that the precession
mode will soften for any sign of DS, for the orientation of spins along z axis.
Surface effects on ferromagnetic resonance in magnetic nanocubes
9
3. Results and discussion
3.1. Surface and core contributions to the energy spectrum
Figure 1. Spectral weight of spin-wave excitations in a box-shaped particle of size 13× 11× 7
and uniform uniaxial anisotropy, in a magnetic field along the x direction.
The procedure to determine the weight of surface and core spins in the energy spectrum has
been described in Subsection 2.2.1. In order to compare the spectral weights inferred from the
analytical expressions in Eq. (10) et seq to those obtained by the numerical method, we consider
a box-shaped particle with a simple cubic lattice. In order to avoid spurious effects that could
be due to highly symmetric systems we chose to investigate a particle with sides of different
lengths, e.g. Nx = 13, Ny = 11, Nz = 7. In Fig. 1 we present a plot of the spectral weight
as a function of the energy ω (here = 1) in units of the nearest-neighbor exchange coupling
J, with Jc = Jcs = Js = J. We have considered a static magnetic field along the x axis and
a (uniform) uniaxial anisotropy for both the core and surface spins with a common easy axis
along the z direction and anisotropy constant D/J = 1. The large core anisotropy D = J
is merely introduced in order to shift the whole spectrum by 2J and thereby to highlight the
uniform mode. We can see that the numerical results fully agree with the spectral weight inferred
from the analytical eigenfunctions in Eq. (10). The full spin-wave spectrum of such many-spin
systems is rather complex as it exhibits many branches, and thence does not lend itself to a
simple interpretation of the various involved excitations. To that end, we have considered a
representative, though much simpler, system that consists of three coupled spin layers for which
the excitation spectrum can be computed, with the possibility to disentangle the contributions
of the surface and core layers. This is done in Appendix B. The major difference is that the
three-layer toy model exhibits only three branches and we can see that the surface spins dominate
the low-frequency excitations. On the other hand, the various branches of the many-spin system
correspond to different modes running in the k−space of a simple cubic lattice. For instance,
10
Surface effects on ferromagnetic resonance in magnetic nanocubes
Figure 2. Absorbed power in a 8× 5× 4 cubic particle. Left panel: Magnetic resonance peak
at ω/J = 0.0174 for two different pumping times. The vertical dotted line shows the position
of the peak for DS = 0. Right panel: Parametric resonance peak at the double frequency
ω/J = 0.0347.
a quick inspection of Fig. B2 shows that the surface is dominant away from the Brillouin zone
center. In addition, the effect of the surface exchange coupling (Js) has been checked for the
same particle without external magnetic field or anisotropy. We have seen that at low excitation
energies, the spectral weights of the surface spins are always higher than those of the core spins.
However, as Js increases the branches of excitations that preferentially involve surface spins
merge with other branches and thus decrease the surface contribution. This effect is more clearly
seen in the framework of the toy-model as shown in Fig. B2.
3.2. Absorbed power
Box-shaped nanoparticles To see how our numerical method of Section 2.2.2 is
3.2.1.
implemented, we start with a small particle containing 160 (= 8 × 5 × 4) spins that is flat
in the xy plane, with the anisotropy axis in the z direction and the ac field applied along the x
axis (if not stated otherwise). The magnetic-resonance (MR) peak in Fig. 2 (left panel) is seen at
ω/J = 0.0174 that is far to the right of the peak position ω/J = 0.0045 obtained for DS = 0.
This can be understood as the result of xy planes having a larger area, their stabilizing action for
DS > 0 is stronger than the destabilizing action of other surfaces, in a qualitative agreement with
Eq. (20). One can see that increasing the pumping time from NT = 10 to NT = 30 makes the
resonance peak narrower and higher, in accord with Eq. (18). Moreover, one can see the zeros
of Pabs and small satellite maxima between them. All the numerical work presented below uses
NT = 10, as this is sufficient to find the positions of the resonance maxima. This is a shape effect
indicating that the precession of spins is elliptic rather than circular. In such cases parametric
resonance can be observed. Thus for the same particle, we also performed a parametric-resonance
calculation, directing the ac field in the spin direction z. The results showing the initial stages
of the exponential parametric instability at the double frequency of the MR peak ω/J = 0.0347
are shown in Fig. 2 (right panel). The parametric-resonance peak has a different structure and
its growth accelerates with the pumping time. However, the parametric resonance requires a
much stronger amplitude of the ac field and longer pumping times, as compared with MR peaks.
In the sequel we will only concentrate on the latter.
In order to identify the contributions from the core and surface spins in the absorbed power
we have investigated a cluster with a similar aspect ratio as the cluster with 13 × 11 × 7 = 1001
Surface effects on ferromagnetic resonance in magnetic nanocubes
11
Figure 3. Absorbed power in a 13 × 11 × 7 cubic particle. Left panel: Low-frequency peak.
The vertical dotted line shows the position of the peak for DS = 0. Right panel: Both
low-frequency peaks (far left) and high-frequency peaks.
spins [see Fig. 3], studied in Fig. 1 and for which the diagonalization method presented in
Section 2.2.1 allows for a discrimination between the contributions from the core and surface.
Taking the (space) Fourier transform of the spin si(t) in Eq.
(15) we obtain the power
absorbed by the k = 0 mode
Pabs = − 1
tf
= − 1
tf
tf
0
tf
0
dt (gµB) δsk=0(t) · Hac (t)
(cid:88)
dt (gµB)
α=x,y,z
k=0(t)eα · Hac (t) .
δsα
Then, setting k = 0 in Eq. (9)
δsk=0 (t) = δsα
k=0 (0) eiωk=0t =
N(cid:88)
(cid:88)
j=1
α=x,y,z
we obtain
tf
dteiωk=0t
N(cid:88)
(cid:88)
j=1
α=x,y,z
(cid:16)
Dα
k=0,j
Dα
k=0,jeα
j
eiωk=0t
(cid:17)
j · gµB Hac (t)
eα
(21)
(22)
(23)
Pabs = − 1
tf
0
Now, since the vectors eα
simplifies into the following form
tf
− 1
tf
j are all parallel to each other, i.e. eα
j = eα, the equation above
N(cid:88)
(cid:88)
Dα
k=0,j
(cid:16)
(cid:17)
eα · Hac (t)
(24)
Pabs =
dteiωk=0t (gµB)
0
j=1
α=x,y,z
P α
abs =
Dα
k=0,j
dteiωk=0teα · gµB Hac (t)
.
12
Surface effects on ferromagnetic resonance in magnetic nanocubes
which suggests that we can introduce the power absorbed by the degree of freedom (mode)
corresponding to the component α = x, y, z. Indeed, we can write
N(cid:88)
j=1
×
− 1
k=0 × (cid:101)P α
k=0
tf
tf
0
This in turn can be rewritten as
P α
abs (k = 0) = C α
where
k=0 ≡
C α
N(cid:88)
j=1
Dα
k=0,j
is the statistical weight of the k = 0 mode and
(cid:101)P α
k=0 ≡ − 1
tf
tf
0
dteiωk=0teα · gµB Hac (t) .
(25)
(26)
(27)
(28)
(29)
k=0.
This means that the absorbed power (per mode) is proportional to the sum of the coefficients of
the wave-functions. As such, instead of calculating the absorbed power as defined by Eq. (15)
we can calculate and plot the coefficients C α
For a clearer analysis of the modes appearing in the absorbed power spectrum, we first
focus on the case of a box-shaped sample with the same exchange constant everywhere, namely
Jc = Jcs = Js = J, and without any anisotropy. All the spins are then identical and the
excitation spectrum is given by a single energy band in the k-space as in Eq. (10). Hence, each
mode can be unequivocally labeled by its wave-vector k only. According to the definition of the
coefficients C α
k , the power can only be absorbed when the field couples to the uniform mode, i.e
for C α
k=0 = 1. On the other hand, for all other values of the wave-vector k it can be easily shown
that
(cid:89)
sin (Nαkα)
sin(cid:0) kα
2
(cid:1) = 0.
C α
k(cid:54)=0 =
α=x,y,z
In contrast to this simple case, for a system with different types of local environments, as
a consequence of an inhomogeneous exchange coupling (Jc (cid:54)= Jcs (cid:54)= Js), or of different types of
on-site anisotropies (surface and core), different energy bands appear in the k-space. This can
be easily understood in the framework of the toy model presented in Appendix B and shown
in Fig. B2). The analysis of such a situation requires an additional band index ((cid:96)) in order to
label each mode of energy ωk,(cid:96) and coefficients C α
k,(cid:96). Consequently, the absorbed power can
be attributed to the non-uniform modes at k = 0. This is shown in Fig. 4 which presents
the spectral weight and the wave-function coefficients C α
k,(cid:96) in the low-frequency regime, with a
surface anisotropy DS/J = 0.1. The upper panel shows the weights of the core and surface spins
for all low frequency modes. The middle and lower panels respectively present the weights of
the power-absorbing modes and the coefficient C α
k,(cid:96), normalized by that of the uniform mode
(k = (cid:96) = 0). We can see that the peaks in the absorbed power in Fig. 3 (for DS/J = 0.1)
coincide with the peaks in black in Fig. 4, i.e the peaks obtained for an ac field applied along
the x axis. The peaks in black obtained for ω/J = 0.24, 0.54, 0.88 in Fig. 4 are not seen
in Fig. 3 because the intensities of these peaks are too low compared to the satellites obtained
from the absorbed power, described in subsection 2.2.3. The first peak ω/J = 0.017 (in Fig.
Surface effects on ferromagnetic resonance in magnetic nanocubes
13
Figure 4. Spectral weight of spin-wave excitations in a box-shaped particle of size 13× 11× 7.
spectral weight for the low frequency region. Middle panel: weights for
Upper panel :
k=0,(cid:96) (cid:54)= 0. The lower panel correspond to the coefficient Cα
k=0,(cid:96) for the different components
Cα
of the spins defined in Eq. (26), normalized that of the uniform mode k = (cid:96) = 0.
ω/J
Surface (%)
Core (%)
0.017
50
50
0.33
60
40
0.79
70
30
1.18
60
40
Table 1. Contributions to the spectral weight from the surface and core spins for the cluster
13 × 11 × 7 with DS /J = 0.1 and a time-dependent field applied along the x axis (i. e. Black
peaks of Fig.4).
3) corresponds to the uniform mode. The latter corresponds to an equal contribution (50%) to
the spectral weight from the core and surface spins.
Indeed, we have checked that this is in
agreement with the lowest energy mode shown in Fig. 4 for which the core and surface spectral
weights coincide [see middle panel]. Since the contribution of both core and surface spins is at
its maximum in this case, the low-energy peak in Fig. 3 and 4 exhibits the highest intensity.
The higher-frequency peaks in black correspond to the non-uniform mode (k = 0, (cid:96) > 0) due
to the anisotropy and therefore they occur with a lower intensity. These peaks have a dominant
contribution from the surface spins (see Tab. 1).
The peaks in cyan in Fig.4 are obtained for a time-dependent field along the y axis. These
peaks appear with the same frequencies as the peaks in black but with different intensities. In
addition, the contributions from the surface and core spins may vary from one type of peaks to
the other.
For the same nanocluster and in accordance with Eq. (20), in Fig. 3 the position of the
low-frequency peak shifts to the right as DS increases from zero (compare with the vertical line
at DS = 0). However, a further increase of SA reverses this tendency, as can be seen from the
curve DS/J = 0.2. This mode softening can be attributed to the second-order effect of surface
anisotropy. On the other hand, in the high-frequency part of the spectrum one can observe three
peaks that could be attributed to three different types of the nanocluster facets with different
local environment (or effective fields). Note that the positions of the peaks are nearly the same
for DS/J = 0.1 and DS/J = 0.2, which hints at the predominant exchange origin of these modes.
14
Surface effects on ferromagnetic resonance in magnetic nanocubes
Figure 5. Absorbed power for 8 × 8 × 8 and 12 × 12 × 12 particles with a focus on the
low-frequency peaks in the left column and the high-frequency peaks in the right column. The
vertical dotted line shows the position of the peak for DS = 0.
3.2.2. Size effect and application to nanocubes The investigation of size effects in general
(i.e. without any rotational symmetry) is a rather involved task since upon increasing the
size the number of modes increases and their degeneracy makes it difficult to disentangle their
contributions to the spectral weight. This is one of the reasons for which we have decided to
focus on cubic samples. In fact, today samples of (iron) nanocubes are routinely investigated in
experiments since their synthesis has become fairly well controlled.
Accordingly, the results for the absorbed power for the 8 × 8 × 8 particle (512 spins) are
shown in Fig. 5. One can see a strong peak at ω = 0.0039J that corresponds to nearly
coherent precession of all spins in the particle. Because of the second-order effect of SA [30] this
peak is shifted to the left from its position for DS = 0, shown by the vertical dotted line at
ω0 = 2DNcore/N = 0.0084J. Note that the first-order formula, Eq. (20), does not capture this
effect. Here one cannot use DS/J = 0.2 because further shift of the peak to the left renders the
collinear spin configuration along the z axis unstable.
The lower panel of Fig. 5 shows similar results for a larger particle of 12 × 12 × 12 = 1728
spins. Here the low-frequency peak is shifted to the right in comparison with the 8×8×8 particle,
and which can be explained by the smaller fraction of surface spins. The leftmost and strongest
of high-frequency peaks here is larger and shifted to the left. Note that for both of these sizes
high-frequency peaks are much smaller than the main low-frequency peak (notice the difference
in scale between the left and right panels). By way of illustration, we consider an Fe nanocube
of side a = 8 nm [5, 6, 12, 18, 31, 32]. This corresponds to a nanocluster of size 27 × 27 × 27
Surface effects on ferromagnetic resonance in magnetic nanocubes
15
Figure 6. Same as in Fig. 5 but for the cluster 27 × 27 × 27.
particle whose absorption spectrum is shown in Fig. 6.
Although the present paper is focused on theoretical aspects, a few predictions can be
made for realistic iron nanocubes studied today in many experiments. Both synthesis and
recent experimental developments have provided systems with optimized structures that could
be mimicked by the simplified model studied here. In particular, using some oxygen and plasma
treatment it seems that the ligands and oxide shell could be effectively removed, leaving us with
ferromagnetic nanocubes, see e.g. Ref.
[18]. Would FMR measurements on such nanocubes
become possible, the observed spectrum should exhibit the features described in the present
work, e.g. a low-energy peak at around 10 GHz for the uniform mode, followed by higher-energy
excitations that couple to the latter.
In addition, the aspect-ratio of box-shaped (non-cubic)
samples can be figured out by this technique upon checking whether a parametric resonance
feature appears in the spectrum. In regards with the values of the physical parameters taken in
our calculations, we note that the ratio of the magneto-crystalline anisotropy to the exchange
coupling (D/J) is here taken at least an order of magnitude larger than in typical iron systems.
The reason is that lower values of this ratio require much more time-consuming calculations while
the physical picture remains the same. More precisely, the calculation for typical iron materials
with D/J ∼ 10−3 would lead to a down-shift of the low-frequency peak roughly by a factor of
10 while the high-frequency peaks should practically remain the same.
As compared with the sizes dealt with above, here the high-frequency peak is even larger
and even more shifted to the left, so that the low- and high-frequency spectra can be plotted
on the same graph. In addition, the high-frequency peak resolves into two peaks. The main
high-frequency peak, shown in the right column of Fig. 5, can be interpreted as being due to
the precession of the spins located near the facets of the cube. Since this precession mode is
non-uniform (it has a non-zero k = 0 component) there is exchange energy involved and this is
why the precession frequency is high. With an increasing size, the exchange energy per spin in
this mode decreases, and so does its frequency. The splitting of the main high-frequency peak
seen for the 27× 27× 27 particle can be explained by the fact that SA induces an increase of the
16
Surface effects on ferromagnetic resonance in magnetic nanocubes
mode stiffness at the two xy planes (the small peak on the right) and to a decrease of the mode
stiffness at the four other surfaces (the big peak on the left).
4. Conclusion
Through a systematic numerical investigation, backed by analytical calculations for special
cases, we have studied and distinguished the role of surface and core spins in box-shaped
magnetic nanoparticles. We have focused this work on this specific shape inspired by numerous
experimental studies of iron nanocubes which are now available in well controlled cubic shapes
and sizes. On the other hand, ferromagnetic resonance measurements on "isolated" nanoelements
has now become possible with the necessary sensitivity for measuring the absorbed power.
Accordingly, we have computed the absorbed power as a function of the excitation frequency
and have shown that it is possible to attribute the different contributions of the surface and
those of the core spins to the various peaks obtained in our calculations.
In particular, the
low-energy peak, corresponding to the k = 0 mode, consists of equal contributions from the
surface and core spins. Furthermore, in the case of less symmetric box-shaped samples with Néel
surface anisotropy, we observe an elliptic precession of the spins whose signature can be seen in a
parametric resonance experiment, where a small signal should be detected at twice the frequency
of the standard magnetic resonance response.
Acknowledgments
This work was partly supported by the French ANR/JC MARVEL. The work of DG was also
supported by the U.S. National Science Foundation through Grant No. DMR-1161571.
Appendix A. Energy Hessian in spherical coordinates
At each site i of the cluster's lattice we may define the reference system with the spherical
coordinate (θi, ϕi) and basis basis (si, eθi, eϕi) related to the Cartesian coordinates by
sin θi cos ϕi
sin θi sin ϕi
, eθi =
cos θi
cos θi cos ϕi
cos θi sin ϕi
− sin θi
, eϕi =
− sin ϕi
cos ϕi
.(A.1)
0
si = eϕi
From this we derive
∂ϕisi= sin θi eϕi,
∂θisi = eθi,
∂θieθi = − si, ∂ϕieθi = cos θi eϕi,
∂θieϕi = 0, ∂ϕi eϕi = − (sin θi si + cos θi eθi) .
leading to δsi = δθi∂θisi+δϕi∂ϕisi=δθieθi+δϕi sin θi eϕi. Then using the gradient
∂si ≡ ∇i = eθi∂θi + eϕi
1
sin θi
∂ϕi ,
(A.2)
we get δsi·∇i = δθi ∂θi + δϕi ∂ϕi. This implies for an arbitrary function f (θiϕi)
∂θif = eθi · ∇if,
(A.3)
Since the spin deviation δsk can be written in terms of δθk and δϕk Eq. (7) can be written
in the basis {(eθi, eϕi)}i=1,···,N = {ξµ}µ=1,···,2N . Note, however, that in the general case these
unit vectors are not orthogonal to each other i.e. ξµ · ξν (cid:54)= δµ,ν. In fact, δsk represents the
∂ϕif = sin θi eϕi · ∇if.
Surface effects on ferromagnetic resonance in magnetic nanocubes
17
(cid:105)
(cid:104)
usual spin-wave deviations from the local equilibrium state of spin sk, which is denoted by s(0)
k .
The latter represents the quantization direction for the local algebra. It's well known that δsk
can be written in terms of the spin operators S±
k which form a local SU(2) algebra with the
i , with εαβγ being the Levi-Civita tensor.
usual commutation rules, i. e.
In particular, spins operating on different sites commute with each other. This implies that the
vectors δsk, or more precisely, the transverse vectors {(eθi, eϕi)}i=1,···,N = {ξµ}µ=1,···,2N can be
represented by the vectors of the orthonormal canonical basis {(ei)}i=1,···,N with eα
i=1 Ei, is given by a general Hamiltonian we obtain the
second derivatives of Ei in terms of its derivative with respect to si.
Assuming that the energy E = (cid:80)N
= iεαβγδijSγ
i = δi,α.
i , Sβ
Sα
j
E
θiθk
∂2
k ∇i =(cid:0) ∂θk
sin θk
1
(cid:101)Hik(Ei) ≡
(cid:101)Hik = ∇T
1
sin θi
∂2
θkϕi
E
E
∂2
ϕkθi
1
sin θi sin θk
1
sin θk
∂ϕk
.
.
E
∂2
ϕkϕi
(cid:1) ∂θi
(cid:110)
sin θi
1
∂ϕi
(cid:111)
(A.4)
(A.5)
This is the (pseudo-) Hessian of E resulting from the action of the (pseudo-) Hessian operator
For a given nanocluster of given size, shape, anisotropy model and the applied field, one
, where θi and ϕi
first determines the equilibrium state, denoted by
are the standard spherical angles defined with respect to the local basis (si, eθi, eϕi) at site i.
The effective field is defined by Heff,i = −δsiE = −∇iE, such that the four second derivatives
s(0)
i = (θ(0)
i=1,···,N
, ϕ(0)
)
i
i
read
∂2
θiθk
E = δik [si · −eθi · (eθi · ∇i)] Heff,i − (1 − δik) eθi · [eθk · ∇k] Heff,i,
∂2
ϕkϕi
E = δik sin θi [(sin θi si + cos θi eθi ) − sin θi eϕi · (eϕi · ∇i)] Heff,i
− (1 − δik) sin θi sin θk eϕi · [eϕk · ∇k] Heff,i,
∂2
θkϕi
E = − δik [cos θi eϕi · + sin θi eϕi · (eθi · ∇i)] Heff,i
− (1 − δik) sin θi eϕi · [eθk · ∇k] Heff,i,
∂2
ϕkθi
(A.6)
It is understood that all these derivatives and the pseudo-Hessian have to be evaluated at
− (1 − δik) sin θk eθi · (eϕk · ∇k) Heff,i.
E = − δik [cos θi eϕi · + sin θi eθi · (eϕi · ∇i)] Heff,i
(cid:110)
(cid:111)
the equilibrium state
s(0)
i = (θ(0)
i
, ϕ(0)
)
i
.
i=1,···,N
Appendix B. Toy model
In order to achieve a simple physical picture of the contributions of core and surface spins to the
spectral weight, together with a possible comparison with the numerical method developed in
Subsection 2.2.1, we have built a toy model that captures the main feature we want to illustrate
but which is analytically tractable. Accordingly, we consider a ferromagnet composed of 3 coupled
layers as sketched in Fig. B1. Each layer is assumed to be infinite in x and y directions.
18
Surface effects on ferromagnetic resonance in magnetic nanocubes
Figure B2. Surface and core spectral weights against the magnon energy for jc = jcs = 1
and with js = 0 (A), js = 0.5 (B).
Figure B1.
surface) and Jc (core).
2D Slab of 3 atomic layers with exchange couplings Js (surface), Jcs (core-
H = −(cid:88)
(cid:88)
The spin Hamiltonian of such a system is the Heisenberg model
Jl
Si,l · (Si+x,l + Si+y,l) − Jcs
Si,2 · (Si,1 + Si,3) ,
(B.1)
where Si,l is the spin at site i within the layer l, and Jl=1,3 ≡ Js and J2 ≡ Jc. We restrict
ourselves to the case of a ferromagnet with Jl > 0, Jcs > 0. In the spin-wave approach we choose
z as the quantization axis and perform a Holstein-Primakoff transformation
l=1,3
i
i
(cid:88)
i,l = S−
Sz
†
i,lS − a
i,lai,l,
(B.2)
Then, we rewrite the Hamiltonian (B.1) in terms of the real-space magnon operators ai,l
†
and a
i,l. The resulting expression can be partially diagonalized after a Fourier transformation
with respect to the (x, y) directions
2Sai,l,
i,l (cid:39)
S−
†
2Sa
i,l.
√
i,l (cid:39)
S+
√
+ Cte,
H
S =
†
q,1 a
a
†
†
q,2 a
q,3
(cid:16)
(cid:88)
J11
qx,qy
−Jcs
0
aq,1
(cid:17)J (q) ·
,
aq,2
aq,3
0
−Jcs
J33
−Jcs
J22
−Jcs
where J (q) is the coupling matrix
J (q) =
(B.3)
(B.4)
Surface effects on ferromagnetic resonance in magnetic nanocubes
with J11 = J33 = 2Js (1 − γq) + Jcs and J22 = 2Jc (1 − γq) + 2Jcs, and γq ≡ 1
2 (cos qx + cos qy).
We use Jc as our energy scale and define the reduced couplings jcs ≡ Jcs/Jc and js ≡ Js/Jc.
The three dispersions are then given by
ω± (jcs, js, q) = 3
19
2 jcs + (1 + js) (1 − γq)
(cid:110)
± 1
2
[3jcs + 2 (1 + js) (1 − γq)]2
−8 (1 − γq) [jcs (1 + js) + 2js (1 − γq)]}1/2
(B.5)
ω0 (jcs, js, q) = jcs + 2js (1 − γq) .
The spectral weights are then obtained as the squares of the projections of the eigenvectors
i , i = 1, 2, 3; α = x, y, z. These weights depend on the physical
onto the canonical basis eα
parameters such as the exchange couplings and anisotropy constants. Upon summing over the
wave vectors q within the first Brillouin zone, one can plot the spectral weights as functions of
ω (q).
i = δα
In Fig. B2 we present the spectral weight of the surface and core spins as a function of the
magnon energy for the three energy bands, along the path qx = qy, corresponding to the three
dispersions (B.5). The circles and squares are the results for a finite cluster (Nx = Ny = 23)
dealt with using the numerical method of Subsection 2.2.1, with periodic boundary conditions
in the x and y directions. The full lines are the results obtained within the spin-wave approach
presented above. The results in Fig. B2 exhibit a very good agreement between the numerical
and analytical approaches for all values of the exchange parameters.
In the spin-wave calculation we consider blocks of three spins, belonging to layers 1, 2,
3. These blocks are coupled to one another by lateral (in-plane) couplings. The spin-wave
dispersion, as shown in the inset of Fig. B2, has three branches: the lowest branch corresponds
to the ferromagnetic magnon excitations with the 3 spins precessing in phase. By computing the
spectral weight associated with this branch, one finds that the surface contribution dominates
(apart from the uniform mode at k = 0) because the corresponding modes require less energy to
be excited. In contrast, the high-energy branch corresponds to the situation where the end spins
(layers) precess with opposite phases. The spectral weight is then dominated by the core owing
to a higher spin stiffness. For the particular case of js = 0, the magnon dispersion exhibits a
non-dispersive branch at ωk = 1 [see inset of Fig. B2 (left)]. This intermediate branch follows
from the fact that the bottom and top layer spins are not coupled within their respective planes.
Therefore, creating an excitation within the top or bottom layer is costless, leading to a mode
with constant energy in k-space. Obviously, this branch corresponds to excitations that are
localized at the surface. This can be seen by examining the spectral weight for which the core
contribution vanishes.
As the surface exchange coupling increases (i.e. js > 0) more dispersion is observed and
the branches start to merge for some magnon energies. Hence, the spectral weight changes both
qualitatively and quantitatively: the gaps close and the surface and core contributions become
more and more entangled.
The calculation of the absorbed power for this system yields one absorption peak for the
uniform mode corresponding to the lower energy band in Fig.B2. The eigenfunctions for the
three energy bands at k = 0 are given by
(φS1 + φC + φS2) ,
(φS1 − φS2) ,
(φS1 − 2φC + φS2) .
(B.6)
Ψ1 = 1√
Ψ2 = 1√
Ψ3 = 1√
3
2
6
20
REFERENCES
Here φS1,2 corresponds to the surface spins and φC to the core spin. The coefficients Ck,(cid:96) of
these vectors do not vanish (and are all equal) for the vector Ψ1 that corresponds to the uniform
mode. In order to obtain more absorption peaks in the absorbed power we can introduce a core
anisotropy kc but no surface anisotropy. In this case the eigenfunctions corresponding to k = 0
are
Ψ1 = 2
N1
Ψ2 = 1√
2
Ψ3 = 2
N3
(cid:104)
(cid:104)
φS1 −(cid:16)
φS1 −(cid:16)
(φS1 − φS2) ,
1 + kc −(cid:112)9 + 2kc + k2
1 + kc +(cid:112)9 + 2kc + k2
c
c
(cid:17)
(cid:17)
(cid:105)
(cid:105)
φC + φS2
φC + φS2
,
,
(B.7)
where N1 and N3 are normalization factors of the wave-vectors Ψ1 and Ψ3 respectively. We can
see that the modes corresponding to Ψ1 and Ψ3 can contribute to the absorbed power.
References
[1] Sun S, Murray C B, Weller D, Folks L and Moser A 2000 Science 287 1989–1992
(Preprint http://www.sciencemag.org/content/287/5460/1989.full.pdf) URL http:
//www.sciencemag.org/content/287/5460/1989.abstract
[2] Lisiecki I, Albouy P A and Pileni M P 2003 Advanced Materials 15 712–716 ISSN 1521-4095
URL http://dx.doi.org/10.1002/adma.200304417
[3] Tartaj P, del Puerto Morales M, Veintemillas-Verdaguer S, González-Carreño T and Serna
C J 2003 Journal of Physics D Applied Physics 36 182 URL http://stacks.iop.org/
0022-3727/36/i=13/a=202
[4] Lisiecki I and Nakamae S 2014 Journal of Physics Conference Series 521 012007 URL
http://stacks.iop.org/0022-3727/41/i=13/a=134011
[5] Snoeck E, Gatel C, Lacroix L M, Blon T, Lachaize S, Carrey J, Respaud M and Chaudret
B 2008 Nano Letters 8 4293–4298 URL http://dx.doi.org/10.1021/nl801998x
[6] Mehdaoui B, Meffre A, Lacroix L M, Carrey J, Lachaize S, Gougeon M, Respaud
M and Chaudret B 2010 Journal of Magnetism and Magnetic Materials 322 L49–
L52 (Preprint 0907.4063) URL http://www.sciencedirect.com/science/article/pii/
S0304885310003057
[7] Vonsovskii S V 1966 Ferromagnetic Resonance: The Phenomenon of Resonant Absorption
of a High-Frequency Magnetic Field in Ferromagnetic Substances (Pergamon Press, Oxford)
[8] AG Gurevich and GA Melkov 1996 Magnetization oscillations and waves (Florida: CSC
Press)
[9] B Heinrich 1994 Ferromagnetic resonance in ultrathin film structures Ultrathin magnetic
structures II ed Heinrich B and Bland J (Berlin: Springer-Verlag) p 195
[10] Tran M 2006 Structural and Magnetic properties of colloidal Fe-Pt and Fe cubic nanoparticles
Master's thesis Institut National des Sciences Appliquees de Toulouse Toulouse
[11] Lee I, Obukhov Y, Hauser A J, Yang F Y, Pelekhov D V and Hammel P C 2011 Journal
of Applied Physics 109 07D313 URL http://scitation.aip.org/content/aip/journal/
jap/109/7/10.1063/1.3536821
[12] Kronast F, Friedenberger N, Ollefs K, Gliga S, Tati-Bismaths L, Thies R, Ney A, Weber
R, Hassel C, Römer F M, Trunova A V, Wirtz C, Hertel R, Dürr H A and Farle M
2011 Nano Letters 11 1710–1715 pMID: 21391653 (Preprint http://dx.doi.org/10.1021/
nl200242c) URL http://dx.doi.org/10.1021/nl200242c
REFERENCES
21
[13] Gonçalves A M, Barsukov I, Chen Y J, Yang L, Katine J A and Krivorotov I N 2013
Applied Physics Letters 103 172406 (Preprint 1310.7996) URL http://scitation.aip.
org/content/aip/journal/apl/103/17/10.1063/1.4826927
[14] Schoeppner C, Wagner K, Stienen S, Meckenstock R, Farle M, Narkowicz R, Suter D and
Lindner J 2014 Journal of Applied Physics 116 033913 URL http://scitation.aip.org/
content/aip/journal/jap/116/3/10.1063/1.4890515
[15] Ollefs K, Meckenstock R, Spoddig D, Römer F M, Hassel C, Schöppner C, Ney V, Farle
M and Ney A 2015 Journal of Applied Physics 117 223906 URL http://scitation.aip.
org/content/aip/journal/jap/117/22/10.1063/1.4922248
[16] Sidles J A, Garbini J L, Bruland K J, Rugar D, Züger O, Hoen S and Yannoni C S 1995 Rev.
Mod. Phys. 67(1) 249–265 URL http://link.aps.org/doi/10.1103/RevModPhys.67.249
[17] Lavenant H, Naletov V V, Klein O, De Loubens G, Laura C and De Teresa J M 2014
Nanofabrication 1(1) 2299–680X (Preprint 1404.0492)
[18] Trunova A V, Meckenstock R, Barsukov I, Hassel C, Margeat O, Spasova M, Lindner J and
Farle M 2008 Journal of Applied Physics 104 093904 URL http://scitation.aip.org/
content/aip/journal/jap/104/9/10.1063/1.3005985
[19] Sukhova A, Usadel K D and Nowak U 2008 Journal of Magnetism and Magnetic
Materials 320 31–35 URL http://www.sciencedirect.com/science/article/pii/
S0304885307006580
[20] Briático J, Maurice J L, Carrey J, Imhoff D, Petroff F and Vaurès A 1999 The European
Physical Journal D - Atomic, Molecular, Optical and Plasma Physics 9 517–521 ISSN 1434-
6079 URL http://dx.doi.org/10.1007/s100530050491
[21] Ling T, Xie L, Zhu J, Yu H, Ye H, Yu R, Cheng Z, Liu L, Liu L, Yang G, Cheng Z,
Wang Y and Ma X 2009 Nano Letters 9 1572–1576 (Preprint http://dx.doi.org/10.
1021/nl8037294) URL http://dx.doi.org/10.1021/nl8037294
[22] Lacroix L M, Huls N F, Ho D, Sun X, Cheng K and Sun S 2011 Nano Letters 11 1641–
1645 pMID: 21417366 (Preprint http://dx.doi.org/10.1021/nl200110t) URL http:
//dx.doi.org/10.1021/nl200110t
[23] Kachkachi H and Garanin D A 2001 Physica A Statistical Mechanics and its Applications
300 487–504 (Preprint cond-mat/0001278)
[24] Kachkachi H and Garanin D A 2001 European Physical Journal B 22 291–300 (Preprint
cond-mat/0012017) URL http://dx.doi.org/10.1007/s100510170106
[25] Krech M, Bunker A and Landau D P 1998 Computer Physics Communications 111 1–13
(Preprint cond-mat/9805214)
[26] Steinigeweg R and Schmidt H J 2006 Computer Physics Communications 174 853–861
(Preprint cond-mat/0507262)
[27] Grimsditch M, Leaf G K, Kaper H G, Karpeev D A and Camley R E 2004 Phys. Rev. B
69(17) 174428 URL http://link.aps.org/doi/10.1103/PhysRevB.69.174428
[28] Grimsditch M, Giovannini L, Montoncello F, Nizzoli F, Leaf G K and Kaper H G 2004 Phys.
Rev. B 70(5) 054409 URL http://link.aps.org/doi/10.1103/PhysRevB.70.054409
[29] Usadel K D 2006 Phys. Rev. B 73(21) 212405 URL http://link.aps.org/doi/10.1103/
PhysRevB.73.212405
[30] Garanin D A and Kachkachi H 2003 Phys. Rev. Lett. 90(6) 065504 URL http://link.aps.
org/doi/10.1103/PhysRevLett.90.065504
22
REFERENCES
[31] Jiang F, Wang C, Fu Y and Liu R 2010 Journal of Alloys and Compounds 503 L31 – L33
ISSN 0925-8388
[32] O'Kelly C, Jung S J, Bell A P and Boland J J 2012 Nanotechnology 23 435604 URL
http://stacks.iop.org/0957-4484/23/i=43/a=435604
|
1311.0964 | 1 | 1311 | 2013-11-05T04:42:16 | Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides | [
"cond-mat.mes-hall"
] | Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS$_2$ and WS$_2$ with electrons and/or holes either by chemical substitution or by adsorption on the sulfur layer. Notably, the activation energies of Lithium and Phosphorus, a shallow donor and a shallow acceptor, respectively, are smaller than 0.1 eV. Substitutional halogens are also proposed as alternative donors adequate for different temperature regimes. All dopants proposed result in very little lattice relaxation and, hence, are expected to lead to minor scattering of the charge carriers. Doped MoS$_2$ and WS$_2$ monolayers are extrinsic in a much wider temperature range than 3D semiconductors, making them superior for high temperature electronic and optoelectronic applications. | cond-mat.mes-hall | cond-mat | Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides
A. Carvalho1, A. H. Castro Neto1
1Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546∗
(Dated: November 6, 2013)
Density functional theory calculations are used to show that it is possible to dope semiconduct-
ing transition metal dichalcogenides (TMD) such as MoS2 and WS2 with electrons and/or holes
either by chemical substitution or by adsorption on the sulfur layer. Notably, the activation ener-
gies of Lithium and Phosphorus, a shallow donor and a shallow acceptor, respectively, are smaller
than 0.1 eV. Substitutional halogens are also proposed as alternative donors adequate for different
temperature regimes. All dopants proposed result in very little lattice relaxation and, hence, are
expected to lead to minor scattering of the charge carriers. Doped MoS2 and WS2 monolayers are
extrinsic in a much wider temperature range than 3D semiconductors, making them superior for
high temperature electronic and optoelectronic applications.
Advances
in the fabrication and characterization
of two-dimensional (2D) dichalcogenide semiconductors
have reshaped the concept of thin transistor gate.[1, 2]
Unlike thin fully-depleted silicon channels, physically
limited by the oxide interface, single layer metal dichalco-
genides are intrinsically 2D and, therefore, have no sur-
face dangling bonds. The monolayer thickness is con-
stant, and the scale of the variations of the electrostatic
potential profile perpendicular to the plane is only lim-
ited by the extent of the electronic wavefunctions. Hence,
TMD can in principle be considered immune to channel
thickness modulation close to the drain.
Building on these fundamental advantages, numerous
field-effect transistor (FET) designs employing MoS2 or
WS2 channels have been proposed. These range from 2D
adaptations of the traditional FET structure, where the
2D semiconductor is separated by a dielectric layer from a
top gate electrode, to dual-gate heterolayer devices where
the transition metal dichalcogenide is straddled between
two graphene sheets[2]. Such FETs can be integrated into
logic inversion circuits, providing the building blocks for
all logical operations [3].
However, at present the success of TMD in electron-
ics is limited by the difficulty in achieving high carrier
concentrations and, by consequence, high electronic mo-
bilities (current values range around 100 cm2/V.s)[4]. In
the absence of a chemical doping technology, the con-
trol of the carrier concentration relies solely on the ap-
plication of a gate voltage perpendicular to the layer,
which shifts the Fermi level position rendering the ma-
terial n- or p-type[5]. But in practice the gate voltage
drop across the insulator cannot exceed its electric break-
down limit (about 1 V/nm for SiO2 , or lower for high-κ
dielectrics[6]). A work-around demonstrated in graphene
consists on gating with ferroelectric polymers[7], al-
though at the expense of the thermal stability and switch-
ing time.
In this article we use first-principles calculations to
show that MoS2 and WS2 can be doped both n- and
p-type using substitutional impurities. This grants tran-
sitional metal dichalcogenides an advantage over other
chalcogenide semiconductor families where doping asym-
metries are notorious: ZnS can be doped n-type but not
p-type, while chalcopyrite CuInTe2 and CuGaSe2 can be
p-type doped but not n-type doped[8], and SnTe has not
yet been doped n-type[9]. In transition metal dichalco-
genides, even though chemical doping is mostly unex-
plored, there have already been some experimental re-
ports of successful chemical doping[10, 11],as well as some
electronic structure calculations for impurities[12, 13].
Further, we find both n- and p-type dopants substitut-
ing in the S lattice site or adsorbed on top of the S layer.
Leaving the transition metal layer nearly undisturbed,
these substitutions promise less scattering to charge car-
riers at the Mo-derived states at the bottom of the con-
duction band (CBM) or at the top of the valence band
(VBM).
Having established that doping is possible, it follows
that 2D doped semiconductors stand out as superior to
3D semiconductors for high temperature applications be-
cause of fact that the electronic density of states, N (E ),
close to the edge of the valence and conduction bands is,
unlike the 3D case, energy independent. It is well-known
that the intrinsic carrier concentration of a semiconduc-
tor is given by:
ni (T ) = pNc (T )Nv (T ) exp(−Eg /(2kT )),
where Eg is the gap energy, and Nc(v) depend on N (E )
(and hence the dimensionality) of the semicondutor. In
2D we have:
(1)
Nc(v) =
Mc(v)me(h) ln 2
π¯h2
kT ,
(2)
Mc(v) is the degeneracy of the conduction (valence) band,
me(h) is the effective mass of the conduction (valence)
band electrons, and T the temperature (k and ¯h are the
Boltzmann and Planck’s constants, respectively). Hence,
in 2D we have ni,2D (T ) ∝ T which should be contrasted
the 3D counterpart where ni,3D ∝ T 3/2 . Figure 1 illus-
trates the relevance of the temperature dependence of
the density of conduction electrons n(T ), by comparing
the carrier density for n-type monolayer MoS2 and Si,
3
1
0
2
v
o
N
5
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
4
6
9
0
.
1
1
3
1
:
v
i
X
r
a
doped with the same dopant concentration and dopant
activation energy, as a function of temperature. While Si
leaves the extrinsic regime (that is, the region of temper-
atures where ni (T ) becomes temperature independent)
above 800 K, in MoS2 the n(T ) curve is flat beyond
1000 K. The temperature stability of ni ultimately re-
flects on transistor characteristics, in particular the gate
voltage threshold.
We studied donor and acceptor impurities using first-
principles calculations. These were based on density
functional theory (DFT), as implemented in the Quan-
tum ESPRESSO code.[14]. Geometry optimizations
and total energy calculations are non-relativistic. A
fully relativistic formalism was used for the bandstruc-
ture calculations (see Supplementary Information). The
exchange correlation energy was described by the gener-
alized gradient approximation (GGA), in the scheme pro-
posed by Perdew-Burke-Ernzerhof[15] (PBE). The Kohn-
Sham bandgaps obtained in the non-relativistic calcu-
lations are respectively 1.65 and 1.77 eV for MoS2 and
WS2 . With spin orbit coupling, these values become 1.55
and 1.51 eV, respectively. We thus find that the GGA is
a good approach for bandstructure calculations of these
materials, and further exchange and correlation effects
are likely to produce, in first approximation, only a rigid
shift of the conduction band[16]. The energy cutoff used
was 50 Ry. Further details of the calculation method can
be found in Ref. 17
The supercell consisted of 4×4 unit cells of the sin-
gle layer material, separated by a vacuum spacing with
the thickness of two times the supercell lattice param-
eter. For charged supercells, the electrostatic correc-
tion of Komsa and Pasquarello was implemented.[18, 19]
The Brillouin-zone (BZ) was sampled using a 4×4×1
Monkhorst-Pack grid.[20]
We have considered five dopants: Si, P, Li, Br and Cl.
Any of these can occupy substitutional positions or be
adsorbed on the S layer. The point symmetry of the S
site is C3v . When replaced by P or Si, the resulting de-
fect keeps the trigonal symmetry and there is little associ-
ated lattice distortion. In the case of neutral ClS and BrS
however, the lowest energy configuration is a Cs geometry
where the neutral ClS and BrS defects are displaced in the
vertical plane, loosening one of the Cl/Br-Mo/W bonds
(Fig. 2-a). This unusual configuration results from the
fact that the halogen partially donates the unpaired elec-
tron to the Mo/W d orbitals, whereas in most molecules
Cl and Br receive an electron instead.
Li is most stable at the S3 position[13], shown in Fig. 2-
b, outside the S layer but on the top of a Mo atom. As
for the adsorbed atoms, P, Si, Cl and Br take the S4
configuration as described in Ref. 13, on top of an S atom.
A requirement for successful doping is that the im-
purity must be stable at the lattice position where it is
active, and comparatively unstable or electrically neutral
at the competing positions. The equilibrium concentra-
2
Si extrinsic region
M
D
N
/
n
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
1000
T (K)
FIG. 1. Electron density in n-type monolayer MoS2 and Si,
with concentration ND = 1018 cm−3 of donors with ionization
energy Ec−EI = 0.045 eV. An effective thickness of 6.46 Awas
used for MoS2 .
FIG. 2. Top: geometry of a distorted substitutional defect
(BrS ), in top and side view. Bottom: geometry of Li ad-
sorbed at the S3 position. TM and S atoms are represented
as gray and white spheres, respectively. The broken bond is
represented in dashed line.
(3)
(4)
niµi + qµe ,
tion [D ] of a defect form D can be related to the defect
formation energy ∆GD ,
kT (cid:19) ,
[D ] = gND exp (cid:18)−
∆GD
where ND is the number of sites available to the defect.
Since our calculations are for T = 0 entropy terms can
be neglected, and the formation energy of the defect can
be obtained from the total energies,
∆GD ≃ Ef (D) = E (D) − Xi
where Ef (D) is the free energy of the system containing
the defect, ni is the number of atoms of species i that
it contains and µi is the respective chemical potential.
Additionally, the formation energy of a charged system,
in charge state q , depends on the chemical potential of
the electrons (µe ).
The chemical potentials are defined by the experimen-
tal growth conditions, which can range from metal-rich
to sulfur-rich. Bulk MoS2 and WS2 are often sulfur
deficient,[21, 22] even though sulfur excess has been re-
ported as well[23] Here, we will assume {µMo/W ,µS } are
in the metal-rich extreme ie. the system is in equilibrium
with a hypothetical reservoir of metallic Mo (or W). The
chemical potentials for the impurities are taken to be
the total energy of the respective isolated atoms, so that
Ef (Dad ) is by definition the adsorption energy.
The calculated formation energies are given in Table I.
In the sulfur-poor limit, for both host materials, substitu-
tional Si and P bind strongly to the lattice, and are more
stable in the substitutional position. Li, on the contrary,
is most stable at a surface adsorbed position.
Br and Cl have comparable formation energies in both
forms. The energy difference between adsorption and
substitution at the S site is linear on the chemical poten-
tial of sulfur, and independent on the chemical potential
of the impurity itself:
Ef (DS ) − Ef (Dad ) = E (DS ) − E (Dad ) + µS .
(5)
Thus, it is in principle possible to control the relative
populations of Cl or Br in different sites by changing the
sulfur abundance.
Another way to enhance the incorporation ratio of Br
and Cl at S sites by using material that has sulfur vacan-
cies a priori (for example pre-irradiated material). The
capture of an impurity atom adsorbed at the layer surface
by a sulfur vacancy,
VS + Xad → XS ,
(6)
where VS is the sulfur vacancy and Xad is the adsorbed
atom is isoenthalpic for Br and Cl. Furthermore, for
Cl the respective energy gain is actually greater than the
formation energy of the vacancy (1.3 and 1.7 eV in sulfur-
poor MoS2 and WS2 , respectively).
3
We have so far considered the stability of the neu-
tral defects. Now the most important requirement for
a dopant is that its ionization energy ED
is not greater
I
than a few kT . The thermodynamic transition level
ED (q/q + 1) can be defined as the value of the Fermi
level for which charge states q and q + 1 of the defect
D have the same formation energy. The position of the
ED (q/q + 1) level relative to the valence band top Ev can
be found from the formation energies (see Eq. 4)[24]
ED (q/q + 1) = Ef [X q ] − Ef [X q+1 ] − Ev .
(7)
and for donors
Thus for acceptors ED (0/+) ≡ ED
I
ED (−/0) ≡ Eg − ED
I .
For comparison, we have also calculated the same
defect levels using the marker method (MM). In this
method, the ionisation energies/electron affinities of de-
fective supercells are compared with those of the pris-
tine supercell,[25] and the spurious electrostatic inter-
actions are partially canceled. There is good agree-
ment between the levels calculate using the two meth-
ods, in most cases within about 0.1 eV. Another indi-
cation of the quality of the method is the agreement
between the gap obtained from total energy difference
Eg = ES (+) + ES (−) − 2ES (0) − 2δE , where ES (q) is the
energy of the pristine supercell in charge state q and δE
is the electrostatic correction of Ref.18, and the Kohn-
Sham gap. These are respectively Eg =1.64 and 1.87 eV
for MoS2 and WS2 , and Eg =1.65 and 1.77 eV for MoS2
and WS2 .
Adsorbed Li is a shallow donor with a small ionisa-
tion energy <0.1 eV both in MoS2 and WS2 . This is
mainly due to two effects. First, the relaxation of Li
in the positive charge state, which is of the order of 30
meV and is a physical effect; second, a spurious band
filling effect,[26, 27] which are larger in WS2 due to the
greatest dispersion of the lowest conduction band. The
bandstructure shows inequivocally that Liad is a shallow
donor. In effect, it merely gives out an electron to the
conduction band, changing little the matrix bandstruc-
ture in the vicinity of the gap (Supplementary Figure 1).
Substitutional Br and Cl are shallow donors only above
room temperature. They contribute with an additional
electron to populate a perturbed conduction band state.
The shallowest of them is BrS , with a ionisation energy
of about 0.1-0.2 eV both in MoS2 and WS2 (Table II).
Even though this is higher than the ionisation energy of
shallow dopants in bulk materials such as Si or GaAs,
it is lower than the dopant ionisation energies in layered
BN.[28]
Substitutional P is found to be a very shallow acceptor,
with activation energy ∼ 0.1 eV in MoS2 , and < 0.1 eV
in WS2 , comparable to the uncertainty of the calculation.
Si is also an acceptor, though deeper.
It is noticeable that ionisation energies in WS2 are usu-
ally smaller, despite its larger calculated bandgap, sug-
gesting that this material is easier to dope.
In summary, we have shown that it is possible to dope
MoS2 and WS2 with electrons or holes by chemical sub-
stitution at the S site or adsorption on the top of the
layer. Amongst the shallow donors, Liad has the lowest
ionisation energy. The donated electron is predominantly
localized on the transition metal d states. However, Li
diffuses extremely fast in most materials and therefore
is not a good choice for high temperature applications.
Besides, BrS and ClS are also donors, but have a higher
ionisation energy. The higher temperature required to
excite the carriers is a trade-off for the higher tempera-
ture stability of the defects.
Phosphorus is a shallow acceptor with a very low ion-
isation energy, comparable to the uncertainty of the cal-
culation. The wavefunction of the unpaired hole state is
a valence-band like state, predominantly localized on the
transition metal layer. This suggests that the ionized PS
defect will be a weak scattering center. The combination
between the high stability of P and the fact that it con-
tributes with a very delocalized electron to the material,
preserving the characteristics of a 2D electron gas, indi-
cate that its extrinsic region would extend up to much
higher temperatures than for Si, that readily becomes
intrinsic at about 800 K (Fig. 1).
These findings open the way to the control of the con-
ductivity type in these two materials, offering a way to
use MoS2 and WS2 for transistor parts other than the
channel, or even to integrate different funtionalities in
the same layer. This seems extremely promising for the
design of electronic and optoelectronic devices for high
temperature operation.
ACKNOWLEDGMENTS
We thank the financial support from NRF-CRP award
”Novel 2D materials with tailored properties: beyond
graphene” (R-144-000-295-281). We thank RM Ribeiro
for providing pseudopotentials. The calculations were
performed in the GRC high performance computing fa-
cilities.
∗ physdca@nus.sg.edu
[1] M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh
and H. Zhang, Nature Chemistry 5, 263 (2013).
[2] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman
and M. S. Strano, Nature Nanotechnology 7, 699 (2012),
and references therein.
[3] B. Radisavljevic, M. B. Whitwick, A. Kis, ACS Nano. 5,
9934 (2011).
[4] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti,
and A. Kis, Nature Nanotechnol. 6, 147150 (2011).
[5] W. Bao, X. Cai, D. Kim, K. Sridhara, and M. S. Fuhrer
, arxiv.org/1212.6292
4
[6] C. Sire, S. Blonkowski, M. J. Gordon, and T. Baron,
Appl. Phys. Lett. 91, 242905 (2007).
[7] G.-X. Ni, Y. Zheng, S. Bae, C. Y. Tan, O. Kahya, J. Wu,
B. H. Hong, K. Yao, B. Ozyilmaz, ACS Nano 6 3935-3942
(2012).
[8] Y.-J. Zhao, C. Persson, S. Lany, and A. Zunger, Appl.
Phys. Lett. 85, 5860 (2004).
[9] D. J. Singh, Functional Materials Letters 1, 4 (2008)
[10] H. Fang, M. Tosun, G. Seol, T. C. Chang, K. Takei, J.
Guo, and A. Javey, NanoLett. 13, 1991 (2013).
[11] Y. Du, H. Liu, A. T. Neal, M. Si, and P. D. Ye, Electron
Device Letters, IEEE (in press).
[12] H.-P. Komsa, J. Kotakoski, S. Kurasch, O. Lehtinen,
U. Kaiser, A. V. Krasheninnikov, Phys. Rev. Lett 109,
035503 (2012).
[13] C. Ataca and S. Ciraci, J. Phys. Chem. C 115, 13303
(2011).
[14] P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car,
C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococ-
cioni, I. Dabo, A. Dal Corso, S. Fabris, G. Fratesi, S.
de Gironcoli, R. Gebauer, U. Gerstmann, C. Gougous-
sis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari,
F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L.
Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. P.
Seitsonen, A. Smogunov, P. Umari, R. M. Wentzcovitch,
J.Phys.:Condens.Matter 21, 395502 (2009).
[15] J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev.
Lett. 77, 3865 (1996).
[16] H.-P. Komsa and A. V. Krasheninnikov, Phys. Rev. B
86, 241201(R) (2012)
[17] A. Carvalho, R. M. Ribeiro and A. H. Castro-Neto, Phys.
Rev. B 88, 115205 (2013).
[18] H.-P. Komsa and A. Pasquarello, Phys Rev. Lett. 110,
095505 (2013).
[19] The values of the correction for a defect in the middle of
the slab, at the interface and on the surface were 0.19,
0.21 and 0.19 eV respectively for MoS2 and 0.19, 0.21
and 0.16 eV respectively for WS2 .
[20] H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13 , 5188
(1976).
[21] T. Ito and K. Naka jima, Philosophical Magazine Part B
37, 773 (1978).
[22] V. Wei, S. Seeger, K. Ellmer, and R. Mientus, J. Appl.
Phys. 101, 103502 (2007).
[23] M. Potoczek, Przybylski and M. Rekas, J. Phys. Chem.
Solids 67, 2528 (2006).
[24] The value of Ev obtained from the bandstructure of the
pristine supercell is usually corrected by alignemento of
the average electrostatic potentials [29]. However, since
in this case a great fraction of the supercell was occu-
pied by vaccuum in the alignment term was found to be
negligible..
[25] J. Coutinho, V. J. B. Torres, R. Jones and P. R. Briddon,
Phys. Rev. B 67, 035205 (2003)
[26] A. Carvalho, A. Alkauskas, A. Pasquarello, A. K. Tagant-
sev, and N. Setter, Phys. Rev. B 80, 195205 (2009).
[27] S. Lany and A. Zunger, Phys. Rev. B 80, 085202 (2009).
[28] F. Oba, A. Togo,
I. Tanaka, K. Watanabe and T.
Taniguchi, Phys. Rev. B 81, 075125 (2010)
[29] C. G. van de Walle and J. Neugebauer, J. Appl. Phys.
95, 3851 (2004).
5
Isosurfaces of the unpaired electron state of Liad
FIG. 3.
(a) and of the unpaired hole state of PS (b), in MoS2 , as
generated by fully relativistic calculations. The former is a
donor, whereas the latter is an acceptor. The square of the
wavefunction is represented. W and S are represented by cyan
and yellow spheres, respectively.
TABLE I. Formation energy of substitutional impurities (Ef )
along with adsorption energies. All values are in eV and refer
to the neutral charge state.
MoS2
Defect E S−poor
(DS ) Ef (Dad ) E S−poor
f
f
−0.3
−0.7
−1.0
BrS
−0.9
−0.9
−1.5
ClS
LiS
−0.7
−2.0
−0.9
−2.7
−0.7
−2.9
PS
SiS
−2.6
−1.6
−2.0
WS2
(DS ) Ef (Dad )
−0.7
−0.9
−1.5
−0.6
−0.9
TABLE II. Defect-related levels in MoS2 and WS2 . E (−/0) is
given relative to Ev and E (0/+) is given relative to Ec . FEM
and MM stand for Formation Energy Method and Marker
Method, respectively (see text). All values are in eV.
(−/0)
FEM
–
–
–
0.11
0.39
(−/0)
FEM
–
–
–
0.02
0.23
MoS2
(−/0)
MM
–
–
–
0.06
0.34
WS2
(−/0)
MM
–
–
–
−0.09
0.12
Method
BrS
ClS
Liad
PS
SiS
Method
BrS
ClS
Liad
PS
SiS
(0/+)
FEM
0.15
0.18
−0.02
–
–
(0/+)
FEM
0.14
0.18
−0.36
–
–
(0/+)
MM
0.22
0.27
0.12
–
–
(0/+)
MM
0.14
0.22
−0.16
–
–
Supplementary Information on: Donor and Acceptor Levels in Semiconducting
Transition Metal Dichalcogenides
A. Carvalho1, A. H. Castro Neto1
1Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546∗
x
)
V
e
(
v
E
-
E
2.0
1.5
1.0
0.5
0.0
-0.5
-1.0
Γ
a) ClS
b) BrS
c) Liad
d) PS
e) SiS
K
Γ
M
K
M
Γ
K
M
Γ
K
M
Γ
K
M
FIG. 1. Fully relativistic Kohn-Sham bandstructures of defects in monolayer WS2 . The bandstructure of the pristine monolayer
is represented shaded, in the same energy scale as the respective defect bandstructure. The calculations were performed in a
supercell consisting of 4 × 4 primitive cells.
∗ physdca@nus.sg.edu
|
1110.4530 | 3 | 1110 | 2011-11-16T12:23:17 | Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies | [
"cond-mat.mes-hall",
"physics.comp-ph"
] | Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained. | cond-mat.mes-hall | cond-mat | Polarization and polarization induced electric field in nitrides –
critical evaluation based on DFT studies
Pawel Strak*, Pawel Kempisty*, Konrad Sakowski*, and Stanislaw Krukowski*,†
*Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,
Poland
†Interdisciplinary Centre for Materials Modeling, Warsaw University, Pawinskiego 5a, 02-106
Warsaw, Poland
ABSTRACT
It was shown that polarization could be defined only for finite slabs with specified boundary
condition. In the case of nitrides in wurtzite structure two different polarizations occurred which differ
by magnitude and direction of built-in electric field. Density Functional Theory (DFT) calculations
were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride
(GaN) and indium nitride (InN). Two different approaches to polarization of nitride
semiconductors were assessed. It was shown that Berry phase formulation of the electron
related polarization component provides nonzero polarization even for single atom and
additionally a number of various solutions, different for various selection of the simulated
volume of the nitrides. The electronic part gives saw-like pattern for polarization. Alternative
standard dipole density formulation of polarization depends on the selection of the simulation
volume in periodic continuous way. A condition of continuous embedding into the infinite
medium, and simultaneously, the zero surface charge representation at crystal boundary
provides to physically sound solution. These solutions correspond to maximal and minimal
polarization values. These solutions arise from different physical termination of the crystal
surfaces, either bare or covered by complementary atoms. This change leads to polarization
and electric field reversal. The polarization and related built-in electric fields were obtained.
Keywords: polarization, polarity, gallium nitride, aluminum nitride, indium nitride, density functional
theory
PACS: 61.50.Ah, 81.10.Aj
I. INTRODUCTION
Macroscopic polarization of crystalline materials is physically important property of solids1.
Polarization is related to symmetry of a crystalline lattice, which allows for the existence of vector
property, in the point group symmetry of the lattice. It is therefore expected that microscopic
1
definition of the property is formulated, in direct relation to the atomic lattice structure. Unfortunately
typical statement, frequently encountered in textbooks, defining polarization as dipole of a unit cell,
divided by its volume, was criticized2-4. It was claimed that so defined quantity depends on the
selection of the simulation volume so it could not be used to determine the physical property of the
matter. The statement was related to the presence of the surface term, inherently involved in the
definition of the polarization as an electric dipole density, which affects its value5-9. A direct
modification, such as using of large volume, does not remove this deficiency2. It is still not clear
whether additional requirement of independency of the selection of simulation volume should be
applied to determination of the polarization. Recent results shed serious doubts whether such
requirement could be met for infinite systems10-12.
Macroscopic polarization is technically important physical property of pyro- and ferro-
electrics, often used in many important technological applications. A natural use of permanent or
induced electric dipole could be found in many applications13. Natural consequence of polarization is
presence of an electric field in the crystal interior possibly affecting functionality of advanced
electronic and optoelectronic devices. The built-in electric fields affect energy of quantum states that
is known as Stark effect. In addition, strain induced field may contribute to this effect significantly,
especially in strained quantum low dimensional structures frequently used in modern devices, built on
polar GaN(0001) surface14-17. The electric field changes energy of quantum states of both types of
carriers, electrons and holes, giving rise to phenomenon for long time known as Quantum Confined
Stark Effect (QCSE) 17. A mere change of the energy of quantum states could be either beneficial or
harmful; a really detrimental is spatial separation of electrons and holes that are shuffled to the
opposite ends of the quantum well17-19. Spatial separation reduces an overlap of the hole-electron
wavefunctions, their radiative recombination rates and lowers efficiency of photonic devices20-23. The
negative influence of QCSE may be enhanced by Auger recombination or carrier leakage at high
injection currents24-28. That could lead to decrease of the device efficiency for higher injection
currents, the phenomenon nicknamed as “efficiency droop”29. A harmful influence of QCSE for
optoelectronic devices is compensated by its beneficial contribution on electronic devices based on
two-dimensional electron gas (2DEG), such as field effect transistors (FET’s) or molecular sensors.
Electric field at AlN/GaN heterostructures stabilizes 2DEG leading to high carrier mobility which may
be used for construction of fast electronic devices. The electric field, induced by dipoles of the
molecules, attached to the surface, may contribute to the sensitivity of molecular sensors which opens
new applications of such devices.
Polarization is therefore a physical property that is an increasingly important in technology.
Recently formulated approach was to divide polarization into ionic and delocalized charge and to
calculate the change of polarization only8, 9. The ionic part may be calculated directly, the delocalized
contribution may be obtained using Berry phase formulation2-7. This procedure provides required
quantity modulo some factor. In the work presented below we will critically asses this formulation and
2
compare these results with reformulated standard definition of polarization as dipole density with
additional condition imposed at boundaries. These conditions allow incorporation of the vacuum in the
infinite crystal body and let to avoid generation of surface charge. Thus polarization is determined
exactly without any inference from the boundary terms. As it is also presented below, polarization
induced electric field in the bulk solid may be determined. That determination is compatible with the
selection of the termination surfaces, thus provide base for accounting of the field influence on the
properties of optoelectronic and electronic devices.
II. CALCULATION METHODS
In the calculations reported below three different DFT codes were used: commercially
available VASP30-32, freely accessible SIESTA33-35 and commercially accessible Dmol36. In the first
instance a standard plane wave functional basis set, as implemented in VASP with the energy cutoff of
29.40 Ry (400.0 eV), was used. As was shown by Lepkowski and Majewski, it gives good results in
precise simulations of GaN properties by VASP code37. The Monkhorst-Pack grid: (7x7x7), was used
for k-space integration38. For Ga, Al, In and N atoms, the Projector-Augemented Wave (PAW)
potentials for Perdew, Burke and Ernzerhof (PBE) exchange-correlation functional, were used in
Generalized Gradient Approximation (GGA) calculations39-41. Gallium 3d and Indium 4d electrons
were accounted in the valence band explicitly. The energy error for the termination of electronic self-
consistent (SCF) loop was set equal to 10-6. The obtained lattice constants were: GaN - a = 3.195 Å
and c = 5.206 Å, AlN - a = 3.112 Å and c = 4.983 Å, and InN - a = 3.563 Å and c = 5.756 Å, which is
in good agreement with the experimental data: GaN: a = 3.189 Å and c = 5.185 Å, for AlN: a = 3.111
Å and c = 4.981 Å and for InN: a = 3.537 Å and c = 5.706 Å.
The second code, SIESTA uses norm conserving pseudopotentials with the numeric atomic
orbitals local basis functions that have finite size support, determined by the user33-35. The
pseudopotentials for Ga, Al, In and N atoms were generated, using ATOM program for all-electron
calculations42,-43. Gallium 3d and Indium 4d electrons were included in the valence electron set
explicitly and were represented by single zeta basis. For s and p type orbitals quadruple zeta basis set
were used. Aluminum atom basis was represented by triple zeta function. Integrals in k-space were
performed using 3x3x3 Monkhorst-Pack grid. The minimal equivalent of plane wave cutoff for grid
was set to 275 Ry. As a convergence criterion terminating SCF loop, the maximum difference between
the output and the input of each element of the density matrix was employed being equal or smaller
than 10-4.
For comparison, spontaneous polarization was also calculated using DMol3 commercial
program36. In DMol3 package, full-electron Kohn-Sham eigenvalue problem with periodic boundary
conditions (PBC) for wave function is solved, using basis of Linear Combination of Atomic Orbitals
(LCAO) 44. The double zeta plus polarization (DZP) basis set was applied, in which required matrix
elements are evaluated numerically on the properly chosen grid. For exchange energy, approximation
3
proposed by Becke45 and Lee, Yang, Parr46 (B88) was chosen, for correlation energy Tsuneda,
Suzumura, Hirao functional was used47. The electric potential was determined by solution of Poisson
equation which was expressed as sum of the multipole contributions, centered on each atom of the
simulated volume with the optimized cutoff radii36, 48. In order to account long range interactions
Ewald summation is employed49. The method is verified to assure solution tolerance of 10-6 hartree.
Thus the DMol3 Poisson equation solution procedure is different than that of VASP and SIESTA.
III. DENSITY DISTRIBUTION
The electric fields in VASP and SIESTA were obtained by inverse Fast Fourier Transform
(FFT) method based on periodicity of electrostatic potential at the edges of the simulated volume.
Such periodicity is enforced by implicit addition of appropriate external field so that any potential
changes related to polarization are compensated. DMol3 solution is based on multipole expansion
method, employing Ewald summation procedure to account long range interaction. Since the DMol3
wavefunctions basis, are spherical harmonics, that are perfect electric multipoles, the summation
employs coefficients only, assuring extremely fast convergence of the Poisson equation solution
procedure. Siesta uses both FFT method and molecular orbitals basis set while VASP is combination
of FFT and planewaves, therefore such combination of the codes allows exhaustive verification of
these three approaches. In Fig. 1 the c-plane averaged density profiles were presented for AlN, GaN
and InN. The diagrams presents the electronic density arising from simple superposition of atomic
charges
SAOρ , the density obtained by full solution of DFT Kohn-Sham equation
KSρ and the
difference of these two:
∆ ≡
−
ρ ρ ρ
SAO
KS
(1)
Naturally, any superposition of charge of separated atoms has no electric dipole moment,
therefore either Kohn-Sham density KSρ or the density difference ρ∆ may be used for calculation of
the polarization and the polarization induced electric field. In principle the results obtained using both
approaches should differ only by an error arising from intersection of the subtracted separated atom
charge (i.e. effectively positive charge, representing atomic nuclei) by top and bottom boundaries. The
coordinate shift, resulting from the periodic boundary conditions may affect magnitude of the dipole
obtained from the integration over simulated volume.
4
N Al
N Al
KS
SAO
0
1
2
3
4
5
z [Å]
N Ga
N Ga
KS
SAO
0
1
2
3
z [Å]
4
5
6
N
In
InN
KS
SAO
0
1
2
4
5
6
3
z [Å]
0,75
0,60
0,45
0,30
0,15
]
3
Å
/
e
[
ρ
]
3
Å
/
e
[
ρ
]
3
Å
/
e
[
ρ
1,8
1,5
1,2
0,9
0,6
0,3
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
]
3
Å
/
e
[
ρ
∆
0,06
0,04
0,02
0,00
-0,02
-0,04
-0,06
VASP
DMOL
SIESTA
0
1
2
3
4
5
z [Å]
]
3
Å
/
e
[
ρ
∆
]
3
Å
/
e
[
ρ
∆
0,06
0,04
0,02
0,00
-0,02
-0,04
-0,06
0,06
0,04
0,02
0,00
-0,02
-0,04
-0,06
VASP
DMOL
SIESTA
0
1
2
3
z [Å]
4
5
VASP
DMOL
SIESTA
0
1
2
4
5
6
3
z [Å]
Fig. 1. (Color online) Left column presents superposition of individual atom charges density (
SAOρ -
red dashed line) and DFT Kohn-Sham solution (
KSρ - black solid line) obtained by VAPS code. Right
column presents the density difference ρ∆ . The densities are averaged in the plane perpendicular to c-
axis diagrams, along which they are plotted for: AlN(top); GaN(middle); InN(bottom).
5
It is worth noting that the density difference is relatively small. It is remarkable that these solutions are
close for all three methods. That indicates on good convergence of the calculations and proper
representation of the real density distribution by DFT solution.
Boundary conditions enforce periodic density distribution which does not specify simulated
volume entirely as its boundaries can be selected arbitrarily. Since the simulated system is electrically
neutral, integral over the density should vanish, thus there are at least two different locations of the
boundaries that of the zero averaged density difference. In principle any other choice could be
adopted, giving rise to different values of the dipole moment of the sample, and consecutively
different value of polarization. As it is shown below, the appropriate treatment of the boundary
problem allows us to obtain well defined, physically sound magnitude of the dipole and consequently,
the polarization.
IV. POLARIZATION OF BULK AlN, GaN AND InN
Polarization in the solids and in the molecules arises from the electronic charge transfer
resulting from bonding that leads to emergence of electrical dipoles. The polarization may be obtained
from its definition, being equal to the dipole density:
(cid:1)
P
where Ω is the simulated volume,
=
r
(cid:1)
3
d r
( )
rρ
1
Ω ∫
( )rρ charge density, both electronic and nuclei. Naturally
(2a)
polarization of superposition of charges of individual atoms should have polarization equals zero, i.e.
1
Ω ∫
For the relation (2b) fulfilled, the polarization may be obtained equally from Kohn-Sham density
( )
rρ
SAO
3
d r
r
(cid:1)
(cid:1)
P
0
=
=
(2b)
KSρ
or the density difference
ρ ρ ρ
∆ =
−
SAO
KS
, which merely reflects above stated fact that it arises from
electronic charge transfer:
=
=
∫
∫
(cid:1)
P
r
(cid:1)
3
d r
3
d r
( )
r
ρ
KS
1
1
Ω
Ω
It was recognized that for electrically neutral systems the result of such procedure does not depend on
the choice of the coordinate system, nevertheless it depends on the choice of the simulated area4, 6, 7. It
was a subject of long debate whether polarization may be uniquely defined as bulk properties of the
solids, independent of their surfaces8,9. A simple model presented in Fig. 2. show that the polarization
depends on the boundary conditions, even in the simplest case for the charge transfer represented by
( )
ρ
∆
r
(2c)
r
(cid:1)
point charges.
6
-
+
+
-
-
+
+
-
-
+
+
-
-
+
-
+
+
-
-
+
+
-
-
+
---
+
-
+
P1
P2
Fig. 2. (Color online) Chain of metal (Al, Ga, In – large red circles) and N (small blue circles)
atoms, representing polarization properties of nitride lattice. Top – superposition of individual atoms,
electrically neutral, for which both polarization and average electric field vanish, center and bottom –
two polarized (charged) lattices, differ by shift of the edge metal atom (bonding is denoted by dotted
line). The edge atom, i.e. the one shifted, is represented in the top diagram by broken line. Polarization
is represented by black arrows.
As it is shown in Fig. 2, at least two equivalent polarization values could be defined, depending on the
termination of lattice, i.e. on the position of the edge atoms. These two polarizations differ by both
magnitude and the direction. Therefore, the definition of the polarization as purely bulk property,
without reference to termination of the lattice cannot by physically justified. Polarization of the
infinite medium cannot be uniquely determined, as at least the two different polarization values exist
for the infinitely thick slab. The difference is not related to calculation method, it is physical in nature,
as different electric field in the medium arises due to different boundaries. Therefore the polarization
could be defined in finite slab only. In addition, the procedure determining polarization and the
polarization related field has to enforce zero surface charge and zero external field for these two
quantities, respectively.
More recent approach is based on division of the polarization into the ionic and electronic
contributions:
where ionic contribution is treated in standard manner using summation over all point charges of the
(cid:1)
(cid:1)
=
P P
ion
+
(cid:1)
P
el
(2)
nuclei Ze :
1
Ω
and Berry phase formulation is applied for electronic part, based on linear response theory adiabatic
∑
(cid:1)
ionP
(3)
=
Ze
⋅
r
(cid:1)
change of the potential, controlled by parameter λ:
7
∆
(cid:1)
P
el
= −
2
e
Ω
∑ ∫
n
(
1
(cid:1)
r w
n
−
)
3
0
w d r
n
(4)
where the sum runs over all occupied real space Wannier functions
0
nw and
1
nw , calculated for both
terminations of the adiabatic path (superscripts correspond to λ = 0 and λ = 1, respectively) 4-7, 49.
A. Polarization obtained from Berry phase formulation
Berry phase formulae for polarization, given in Refs 4-7, modified for the application to
USPP's and PAW datasets50, were used in the version implemented in VASP package. In order to
obtain good approximation for band gap we have recalculated wavefunctions for PBE charge density
with HSE03 functional51. Determination of polarization from geometric phase formulation relies on
adiabatic change of the crystal potential. Derivation of polarization by Resta is limited to electronic
part only2. The ionic and electronic contributions, obtained from Eq. 4 and 5 respectively without
assumption of electric neutrality, depend on the coordinate system and the truncation of the integration
area. As an initial test, the Berry phase polarization was determined using single Ga atom in the 20 Å
long cell.
]
Å
e
[
z
d
150
100
50
0
-50
-100
-150
0
4
8
12
∆z [Å]
ion
dz
elec
dz
tot
dz
16
20
Fig. 3. (Color online) Electric dipole of single gallium atom located in 20 Å long simulation
cell as a function of the shift of the periodic cell related to the Ga atom along z-axis obtained from
Berry phase formulation implemented in VASP: ionic part (Eq. 4) – black dash-dotted line, electronic
0
z∆ = corresponds to a system with Ga atom
part (Eq. 5) – red dashed line, total – solid blue line.
located in the center of a cell.
z∆ =
10
corresponds to a system with Ga atom located in the boundary
of a cell.
8
As shown in Fig.3. the Berry phase expression is not constant, it depends on the location of single
atom in the simulation cell. Next, the solution obtained by the iteration procedure where the density is
kept constant, equal to
SAOρ . The SCF iteration loop converged to the wavefunction describing
nonpolarized state of the system. Naturally, the Berry phase procedure should give the polarization of
the system equal to zero. As shown in Fig. 4, the polarization of Ga-N system is not zero. Moreover,
there is no such selection of the simulation volume for which the total polarization vanish.
]
Å
e
[
z
d
30
20
10
0
-10
-20
-30
-40
dion
delec
dtot
4
5
0
1
2
3
∆z [Å]
Fig. 4. (Color online) “Z” component of a Ga-N dipole as a function of shift of the periodic
cell along c-axis obtained from Berry phase formulation implemented in VASP code: ionic part (Eq.
4) – black dash-dotted line, electronic part (Eq. 5) – red dashed line, total – solid blue line for the
wavefunction compatible with the density being the sum of densities of separated atoms
SAOρ of
gallium and nitrogen atoms.
Subsequently, the full solution of Kohn-Sham equation was obtained in which the relaxation
procedure was performed for all three nitrides: AlN, GaN and InN.
9
ion
dz
ele
dz
tot
dz
20
15
10
5
0
-5
-10
-15
]
g
n
A
e
[
z
d
0
1
2
3
∆ z [Ang]
4
5
]
Å
e
[
z
d
30
20
10
0
-10
-20
-30
-40
]
Å
e
[
z
d
40
30
20
10
0
-10
-20
-30
-40
-50
dion
delec
dtot
0
1
2
3
∆z [Å]
4
5
dion
delec
dtot
0
1
2
4
5
6
3
∆z [Å]
Fig. 5. (Color online) “Z” component of a dipole of simulation cell as a function of shift of
periodic cell along c-axis, obtained from Berry phase formulation VASP code: ionic part (Eq. 4) –
black dash-dotted line, electronic part (Eq. 5) – red dashed line, total – solid blue line; (top) AlN;
(middle) GaN; (bottom) InN.
10
As claimed by Resta et al, combination of electronic and ionic contributions should be
independent of the system coordinates, and also of the truncation of the volume. As expected, the ionic
contribution is linear function of the z coordinate that undergoes jumps when the N or Ga atoms cross
the boundaries. For 4 atoms in total, four jumps in ionic contribution was obtained for all three
nitrides. It was also argued that the electronic contribution is determined modulo periodic change of
the geometric phase due to translation of the crystal as a whole, which leads to the following
uncertainty:
∆
(cid:1)
P
el
=
fe
Ω
∑
n
(cid:1)
R
n
(5)
where f is the number of the electrons in valence band and R is the lattice period. Accordingly, the
number of electrons is: f = 8 for AlN, f = 18 for GaN and InN, and the number of the jumps follows
this prediction4. As expected the total polarization being combination of these two contributions is
constant but it contains a number of jumps.
B. Polarization obtained from dipole density
As it was argued above, the polarization has to be simulated using finite region with
appropriate boundary conditions, preventing emergence of surface charge which may affect the
results. Nevertheless, in typical ab intio calculations small size cell with periodic boundary conditions
for electronic density is used. It is therefore natural to verify whether the periodic boundary conditions
affect the determined electric dipole moment. The results of the calculations for single gallium atom
related dipole in 20 Å cell are presented in Fig. 6.
elec
dz
ion
dz
tot
dz
]
Å
e
[
z
d
200
100
0
-100
-200
0
4
12
16
20
8
∆z [Å]
11
Fig.6 (Color online). Electric dipole of gallium atom in 20 Å long cell, in function of the shift of the
periodic cell along z-axis: electronic part – black dash-dotted line, ionic contribution – red dashed
0
z∆ = corresponds to a system with Ga atom located in the center of a
line, total – solid blue line.
cell.
z∆ =
10
corresponds to a system with Ga atom located in the boundary of a cell.
As shown here, the obtained dipole is affected only for these locations where the boundary intersects
electronic charge close to Ga atom. Otherwise, the result is zero as expected for nonpolarized system.
Similar behavior was obtained for cell simulation of the system of gallium and nitrogen atoms. The
dipole related polarization is calculated for the case of density obtained from superposition of atomic
charges
SAOρ
and solution of Kohn-Sham equation KSρ , presented above in Fig.1.
]
Å
e
[
d
150
100
50
0
-50
-100
SAO
DFT
150
100
50
0
-50
-100
]
Å
e
[
d
0
1
2
3
z [Å]
4
5
0
1
2
3
z [Å]
4
5
Fig.7. (Color online). Electric dipole of GaN cell in function of the position of the cell
boundary: left - determined for density obtained for superposition of atomic charges SAOρ
; right -
solution of Kohn-Sham equation KSρ : electronic part – black dash-dotted line, ionic contribution – red
dashed line, total – solid blue line.
As shown in Fig. 7, direct determination of the dipole is strongly affected by boundary conditions,
shifting part of the charge and completely changing the obtained results. In addition, the selection of
arbitrary conditions is not compatible with the requirement of the zero surface charge, as the finite
density cannot be smoothly terminated, i.e. the consistent method of simulation both the cell
representing the volume, and the cell at the boundary of the slab, necessary for simulation of finite
systems. For finite slab it is necessary to set zero surface charge in order to prevent additional,
spontaneous polarization irrelevant contributions. As there should be no charge or dipole layer at the
surfaces, both the electric potential and the electric field are continuous across the system boundaries.
In addition, as the modeled sector should be naturally embedded into the infinite medium, the electric
12
potential, the field and its normal derivative should be continuous across the interface, amounting to
the following conformity conditions
lim
0
→
ε
lim
0
→
ε
(
)
φ ε
=
z
=
(cid:1)
(
E z
=
)
ε
=
lim
0
→
ε
lim
0
→
ε
(
φ
z
( )
)
0
ε φ
= −
=
(cid:1)
(
E z
)
ε
= −
=
(cid:1)
E
(0)
lim
0
→
ε
(
∂
E z
z
∂
z
=
)
ε
∂
=
lim
0
→
ε
)
ε
= −
(
E z
z
∂
z
=
(
∂
E z
z
∂
z
=
0)
(6)
(7)
(8)
The considered field could be integrated over the area of the boundary to get average values, which are
function of z coordinate only. Since the simulated area can be truncated at any position and the electric
field follows the equation:
z ( )
∂
E z
z
∂
=
( )
zρ
ε
(9)
in which the averaged density profiles, plotted in Fig.1 could be used. Note that the boundary shift
should entail appropriate rearrangement of the density distribution.
In order to model the polarization exactly, it is required that the boundaries of the simulated
regions should represent the surfaces of real crystal, without additional surface charge. The physically
sound approach is that the electronic density difference vanishes outside. Abrupt termination in
nonphysical, and any modification of Kohn-Sham density KSρ to assure continuous could in principle
provide additional surface charge. In contrast to that this condition can be imposed for the density
difference ρ∆ so this quantity is used in polarization determination below. Application of the
condition (Eq. 9) to assumption of continuity (Eq. 8) entails constant density outside the simulated
region as shown in Fig. 6.
]
3
Å
/
e
[
ρ
∆
0,04
0,00
-0,04
ρ0
ρ1
ρ2
ρ3
ρ4
4
5
6
7
8
9
10
11
Fig. 8. (Color online) Several choices of the truncation of AlN density difference profiles obtained
z [Å]
from VASP and its continuation in accordance to the conformity conditions in Eqs. 6-9.
13
Therefore, only the two selected terminations, those plotted by solid lines in Fig. 8 for which the
density difference is zero outside are suitable for calculation of the polarization. It has to be stressed
out that this conclusion results from simultaneous requirement that the embedded region is smoothly
incorporated into the crystal body and their edge should represent the surface of real crystal without
any surface charge. Due to electric neutrality condition, at least two such terminations could be found
for any polarized system.
In fact the difference in the selection of the simulated volume directly affects the resulting
value of the electric dipole. Using obtained surface averaged electron density difference profiles, the
AlN electric dipole magnitude was calculated directly by integration according to Eq. 2c. The result is
presented in Fig. 9.
]
Å
e
[
e
l
o
p
i
d
1,0
0,8
0,6
0,4
0,2
0,0
-0,2
-0,4
-0,6
-0,8
∆ρ4
∆ρ3
Berry Phase
∆ρ2
∆ρ1
∆ρ = 0
0
1
2
3
4
5
z [Å]
Fig.9. (Color online) Electric dipole of the AlN simulated volume, in function of the shift along c-axis.
The results obtained by integration of the profiles truncated in the way presented in Fig. 2 are denoted
by red squares.
For real slab zero density condition outside is valid which selects from all possible truncations
only the two that are denoted by solid lines in Fig. 8. As expected these two selections correspond to
maximal and minimal values of the dipole plotted in Fig. 9. In fact, these two selections correspond to
two possible termination of the top polar surface, i.e. by nitrogen or aluminum atoms. These two cases
correspond to the top surface having aluminum triply bonded atoms that are either bare or nitrogen
covered. In order to fulfill chemical stoichiometry slab criterion, such change of the top surface and
position of the layer of N atoms has to be accompanied by the appropriate rearrangement of the
bottom surface. In summary this leads to reversal of the polarization dipole, as shown in Fig. 3.
14
It has to be noted that the modeled area and the interfaces does not describe the real atomic
configuration of any nitride surface. This is a simulation model devised to obtain the polarization and
electric field in uniformly polarized nitrides
(cid:1)
0E
, corresponding to minimal energy of the nitrides under
no external field. The magnitude of such field will be determined in the next Section.
C. Polarization - summary
It was postulated that the Berry phase results should give the physically meaningful value of
polarization by proper selection of the additional constant value given by Eq. 10 (Ref. 4). This is not
as straightforward as it was supposed to be. The number of the possible selection of arbitrary constant
is large, even for simple structure of the nitrides. Naturally, the Berry phase result should be within the
interval obtained from dipole calculations. This is not the case, but it could be reconciled by additional
contribution which may bring the Berry phase result to this interval. In order to compare these results,
the obtained polarization values are summarized in Table I.
Table I. Polarization of nitrides; AlN, GaN and InN, obtained from dipole and Berry phase
calculations (in e/Å2)
AlN
GaN
InN
Berry phase
-0.3220
-0.2028
-0.1432
-0.0836
0.0357
0.0952
0.1549
0.3934
-0.7666
-0.5404
-0.3142
-0.2572
-0.0880
-0.0335
0.0250
0.1382
0.2513
0.3082
0.3644
0.4774
0.5905
-0.7205
-0.5386
-0.3568
-0.1749
-0.1275
0.0070
0.0980
0.1889
0.2798
0.3256
0.3708
0.4617
0.5526
∆ρ
-0.01485
0.01979
-0.0128
0.0153
-0.0114
0.0123
15
These polarization values were obtained using the following cell volumes: ΩAlN = 41.79 Å, ΩGaN =
46.03 Å and ΩInN = 63.30 Å. Using Eq. 10 and the lattice constants c AlN = 4.983 Å, c GaN = 5.206 Å
and c InN = 5.756 Å, the following additive constants for polarization were obtained: ∆Pel-AlN = 0.954
e/Å2, ∆Pel-GaN = 2.036 e/Å2 and ∆Pel-InN = 1.637 e/Å2. These values are relatively high compared to the
dipole results obtained with method based on density difference Eq. 1. It is worth mentioning that the
jumps in the electronic part follow Eq. 10 for f = 1, i.e. accounting single electron contribution only.
Such jumps could be translated into the following additional constant values: ∆Pel-AlN-1 = 0.1192 e/Å2,
∆Pel-GaN-1 = 0.1131 e/Å2 and ∆Pel-InN-1 = 0.0909 e/Å2. In fact these polarization values obtained in dipole
model may be approximated by appropriate subtraction of single electron values.
Notably, the nitrides spontaneous polarization obtained by Bernardini et al.14 using Berry
phase approach were: AlN: -0.081 C/m2 (-5.05 x 10-3 e/Å2), GaN: -0.029 C/m2 (-1.81 x 10-3 e/Å2), and
InN: -0.032 C/m2 (-1.99 x 10-3 e/Å2). These results are slightly lower that our results obtained from
dipole calculations. Additional difference stems from the fact that, the dipole formulation presented
above, gives two different polarization values.
V. POLARIZATION INDUCED FIELD IN BULK AlN, GaN AND InN.
In addition to the polarization, the physically relevant quantity, directly affecting the
performance of MQW based devices, is polarization induced electric field. Finite systems could be
subjected to arbitrarily selected boundary conditions for potential, giving rise to different field inside.
A standard case of a flat parallel plate capacitor demonstrates the dilemma. For the plates uniformly
charged, the solution of Poisson equation having zero field outside is routinely selected by invoking
additional argument that the potential should be finite at infinity. Formally, the second solution, that of
the zero field inside and uniform nonzero field outside, fulfills Poisson equation as well as any
normalized linear combination of these two solutions. Thus a plethora of the solutions exists, in which
an additional argument of potential at infinity is applied to find physically sound solution. . In fact, this
freedom is used in solution of Poisson equation by FFT method. Nevertheless, the physically sound
solution is found using the same criterion as for capacitor with zero field at infinity. This solution was
obtained for zero density outside, i.e. for the two selected cases above. This formulation allows
obtaining the two possible values of the field, which corresponds to two selection of the crystal
termination. In Fig. 5, the electric fields obtained for selected cases shown in Fig.2. The physically
sound solutions are plotted using solid lines.
16
Fig. 10. (Color online) Electric field, averaged in c-plane, along c-axis, in single periodic cell
of: (a) AlN; (b) GaN; (c) InN.
17
In addition, Fig. 11 presents the physically sound electric potential distributions plotted for AlN, GaN
and InN. From these potential distributions the following potential differences were obtained: for AlN:
∆VN
AlN = -18.00 V and ∆VAl
AlN = 13.59 V; for GaN: ∆VN
GaN = -14.49 V and ∆VGa
InN: ∆VN
InN = -12.85V and ∆VIn
InN = 11.75 V. Since the following lattice constants were adopted for
the modeling: c AlN = 4.983 Å, c GaN = 5.206 Å and c InN = 5.756 Å, the average fields are as
follows: for AlN: EN
0,AlN = -3.612 V/Å and EAl
0,AlN = 2.727 V/Å; for GaN: EN
0,GaN = -2.783 V/Å and
0,GAN = 2.317 V/Å; for InN: EN
0,InN = -2.232 V/Å and EIn
EGa
0,InN = 2.041 V/Å. These values are
relatively high and they should be relatively easy to detect in nitride based structures. Note
GaN = 12.06 V; for
that screening could decrease or remove its influence, in the case when the size of the
structures is comparable or larger than the characteristic screening lengths.
(a)
(b)
18
(c)
Fig. 11. (Color online) Electric potential, averaged in c-plane, along c-axis, in single periodic
cell of: (a) AlN; (b) GaN; (c) InN. Black (solid) and red (broken) lines correspond to two different
possible electric field directions, related to different polarization values.
These fields are to be used from in any geometrical arrangement of nitrides, encountered in
electronic or optoelectronic devices by minimization of the electrostatic energy functional:
)2
(
(cid:1)
(cid:1)
ε −
E E
0
2
∆ = ∫
W
3
d r
(5)
Naturally, the uniform polarization field
oE(cid:1)
polarization in the single finite size crystal without any surface or external contributions. These fields
is the minimal energy solution, corresponding to uniform
are the maximal field induced in finite size polarized semiconductors. In any real quantum structure,
the fields should be lower, nevertheless that should affect properties of these structures considerably.
VI. SUMMARY
Two different approaches to polarization of nitride semiconductors were assessed. It was
shown that Berry phase formulation of the electron related polarization component provides a nonzero
polarization for nonpolarized system. The electronic part gives saw-like pattern for polarization.
Additionally a number of various solutions, different for various selection of the simulated volume
could be obtained. A total number of these solutions, related to well known scaling of the geometric
phase is equal to the number of valence electrons in the system. Summed with similar pattern for ionic
part, provides several polarization values.
Standard dipole density formulation depends on the selection of the simulation volume in
periodic continuous way. Using the condition of continuous embedding into the infinite medium, and
simultaneously, the zero surface charge representation at crystal boundary, physically sound solution
19
could be identified. This solution corresponds to maximal and minimal polarization values and
corresponds to different physical termination of the crystal surfaces, either bare or covered by
complementary atoms. This change leads to polarization and electric field reversal. Values of the
fields are maximal values possible for finite size polarized nitrides without any surface
charges or externals fields.
ACKNOWLEDGEMENTS
The calculations reported in this paper were performed using computing facilities of the
Interdisciplinary Centre for Modelling of Warsaw University (ICM UW). The research was partially
supported by the European Union within European Regional Development Fund, through grant
Innovative Economy (POIG.01.01.02-00-008/08). We would like to thank Michael Springborg from
University of Saarland and Bernard Kirtman from University of California Santa Barbara for p
discussion of importance of boundary conditions for polarization determination which has changed the
present publication considerably.
REFERENCES
1 L.D. Lanadau, and E.M. Lifsic, Electrodynamics of Continuous Media (Pergamon, Oxford, 1984).
2 R. Resta, Rev. Mod. Phys. 66, 899 (1994).
3 R. Resta, Ferroelectrics 136, 51 (1992).
4 R. M. Martin, Phys. Rev. B 9, 1998 (1974).
5 R. D. King-Smith, and D. Vanderbilt, Phys. Rev. B 47 1651 (1993).
6 D. Vanderbilt, and R.D. King-Smith, Phys. Rev. B 48 4442 (1993).
7 R. Resta, in Berry Phase in Electronic Wavefunctions, Troisième Cycle de la Physique en Suisse
Romande, (Année Academique, 1996).
8 M. Posternak, A. Baldereschi, A. Catellani, and R. Resta, Phys. Rev. Lett. 64 1777 (1990).
9 A. K. Tagantsev, Phys. Rev. Lett. 69 389 (1992).
10 M. Springborg, B. Kirtman, Phys. Rev B 77, 045102 (2008).
11 M. Springborg, V. Tevekeliyska, B. Kirtman, Phys. Rev B 82, 165442 (2010).
12 M. Springborg, B. Kirtman, Theor. Chem. Accounts submitted (2011) .
13 M. E. Lines, and A.M. Glass, Principles and Applications of Ferroelectrics and Related Materials,
(Clarendon, Oxford, 1974)
14 F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. Lett. 79, 3958 (1997)
15 F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
16 F. Bernardini, V. Fiorentini, Phys. Stat. Solidi B 216, 391 (1999).
17 M. P. Halsall, J. E. Nicholls, J. J.Davies, B. Cockayne, and P.J. Wright, J. Appl. Phys. 71, 907
(1992).
18 M. Buongiorno Nardelli, K. Rapcewicz, and J. Bernholc, Appl. Phys. Lett. 71, 3135 (1997).
20
19 S. P. Łepkowski, H. Teissyere, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett. 79,
1483 (2001).
20 T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa,
Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. 73, 1691 (1998).
21 R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Ander, and M. Godlewski, Appl.
Phys. Lett. 74, 3827 (1999).
22 J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rev. B 57, R9435
(1998).
23 P. Lefebvre, J. Allegre, B. Gil, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, and P.
Bigenwald, Phys. Rev. B 59, 15363 (1999).
24 Y. C. Shen, G. O. Muller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Kramers, Appl.
Phys. Lett. 91, 141101 (2007).
25 I. V. Rozhansky, and D. A. Zakeheim, Phys. Stat. Solidi C 3, 2160 (2006).
26 M. F. Schubert, S. Chajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. F. Crawford, S. R. Lee, A.
J. Fisher, G. Thaler, and M. A. Banas, Appl. Phys. Lett. 91, 231114 (2007).
27 J. Xie, X. Ni, Q. Fan, R. Schimada, U. Ozgor, and H. Morkoc, Appl. Phys. Lett. 93, 121107 (2008).
28 H. Teisseyre, A. Kaminska, G. Franssen, A. Dussaigne, N. Grandjean, I. Grzegory, B. Lucznik, and
T. Suski, J. Appl. Phys. 105, 63104 (2009).
29 H. Morkoc, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, Berlin, 2008), vol. 3.
30 G. Kresse, and J. Hafner, Phys. Rev. B 47, 558 (1993); ibid. 49, 14251 (1994).
31 G. Kresse, and J. Furthmüller, Comput. Mat. Sci. 6 15 (1996).
32 G. Kresse, and J. Furthmüller, Phys. Rev. B 54, 11169 (1996).
33 P. Ordejón, D. A. Drabold, M. P. Grumbach, and R. M. Martin, Phys. Rev. B 48, 14646 (1993).
34 P. Ordejón, D. A. Drabold, R. M. Martin, and M. P. Grumbach, Phys. Rev. B 51, 1456 (1995).
35 J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, J.
Phys.: Condens. Matter 14, 2745 (2002).
36 B. J. Delley, J. Chem. Phys. 92, 508 (1990); ibid 113, 7756 (2000).
37 S. P. Łepkowski, and J. A. Majewski, Phys. Rev. B 74 35336 (2006).
38 H.J Monkhorst, and J. D. Pack, Phys. Rev. B 13 5188 (1976).
39 J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77 3865 (1996).
40 P.E. Blöchl, Phys. Rev. B 50 17953 (1994).
41 G. Kresse, and D. Joubert, Phys. Rev. B 59 1758 (1999).
42 N. Troullier, and J. L. Martins, Phys. Rev. B 43, 1993 (1991), ibid 43, 8861 (1991).
43 Z. Wu, and R.E. Cohen, Phys. Rev. B 73 235116 (2006).
44 C. C. Roothaan, J. Rev. Mod. Phys. 32, 179 (1960); ibid 23, 69 (1951).
45 A. D. Becke, J. Chem. Phys. 88, 2547 (1988).
46 C. Lee, W. Yang, and R. G. Parr, Phys. Rev. B 37, 785 (1988).
21
47 T. Tsuneda, T. Suzumura, and K. Hirao, J. Chem. Phys. 110(22), 10664 (1999).
48 B. Delley, J. Phys. Chem. 100, 6107 (1996).
49 E. P. Ewald, Ann. Phys. 64, 253 (1921).
50 D. Vanderbilt, and R. D. King-Smith, in Electronic polarization in the ultrasoft pseudopotential
formalism (Unpublished report, 1998).
51 J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 118, 8207 (2003).
52 R.W. Nunes, and X. Gonze, Phys. Rev. B 63 155107 (2001).
22
|
1802.01816 | 1 | 1802 | 2018-02-06T06:42:11 | Strong photon antibunching in weakly nonlinear two-dimensional exciton-polaritons | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"physics.optics"
] | A deterministic and scalable array of single photon nonlinearities in the solid state holds great potential for both fundamental physics and technological applications, but its realization has proved extremely challenging. Despite significant advances, leading candidates such as quantum dots and group III-V quantum wells have yet to overcome their respective bottlenecks in random positioning and weak nonlinearity. Here we consider a hybrid light-matter platform, marrying an atomically thin two-dimensional material to a photonic crystal cavity, and analyze its second-order coherence function. We identify several mechanisms for photon antibunching under different system parameters, including one characterized by large dissipation and weak nonlinearity. Finally, we show that by patterning the two-dimensional material into different sizes, we can drive our system dynamics from a coherent state into a regime of strong antibunching with $g^{(2)}(0) \sim 10^{-3}$, opening a possible route to building scalable, on-chip quantum simulators. | cond-mat.mes-hall | cond-mat | Strong photon antibunching in weakly nonlinear two-dimensional exciton-polaritons
Albert Ryou1, David Rosser2, Abhi Saxena3, Taylor Fryett1, Arka Majumdar1,2
1 Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA
2 Department of Physics, University of Washington, Seattle, WA 98195, USA
3 Department of Electrical Engineering, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
(Dated: February 7, 2018)
A deterministic and scalable array of single photon nonlinearities in the solid state holds great
potential for both fundamental physics and technological applications, but its realization has proved
extremely challenging. Despite significant advances, leading candidates such as quantum dots and
group III-V quantum wells have yet to overcome their respective bottlenecks in random positioning
and weak nonlinearity. Here we consider a hybrid light-matter platform, marrying an atomically
thin two-dimensional material to a photonic crystal cavity, and analyze its second-order coherence
function. We identify several mechanisms for photon antibunching under different system parame-
ters, including one characterized by large dissipation and weak nonlinearity. Finally, we show that
by patterning the two-dimensional material into different sizes, we can drive our system dynamics
from a coherent state into a regime of strong antibunching with g(2)(0) ∼ 10−3, opening a possible
route to building scalable, on-chip quantum simulators.
I.
INTRODUCTION
Quantum optical nonlinearities have received grow-
ing interest for their key role in quantum informa-
tion science1, quantum simulations2, and other quan-
tum technologies3. While nonlinear effects with individ-
ual emitters have been demonstrated across a range of
platforms, including ultracold atoms4, superconducting
qubits5, and semiconductor quantum dots6,7, realizing
a deterministic and scalable array of such nonlinearities
has proved a far more challenging task. For quantum
dots, which are particularly attractive due to their ver-
satility and on-chip compatibility8, random positioning
and inhomogeneous broadening of the emitters remain
formidable bottlenecks9,10.
Another solid-state candidate for quantum nonlinear
optics is the exciton-polariton, a quasiparticle made of
a semiconductor exciton strongly coupled to a microcav-
ity photon. Inheriting strong interactions from the mat-
ter component and fast dynamics and state observabil-
ity from the photonic component, exciton-polaritons are
particularly well-suited as building blocks for photonic
quantum simulations11–13. A host of many-body corre-
lated phenomena with exciton-polaritons have been ob-
served, including Bose-Einstein condensation14 and po-
lariton lasing15. Nevertheless, there has been no report of
a strong polariton-polariton interaction at a single quan-
tum level. To increase the interaction strength, several
researchers tried shrinking the size of the polariton wave-
function. Besga et al. decreased the cavity mode volume
by employing a fiber-tip cavity16, and recently Munoz-
Matutano et al., using a similar setup, reported a weak
nonlinearity17. Researchers have also tried decreasing the
effective size of group III-V quantum wells, albeit with
limited success18,19.
Recent advances in atomically thin two-dimensional
(2D) materials point to a new potential platform for
scalable quantum optical nonlinearities. These materi-
als,
including graphene, hexagonal boron nitride, and
transition-metal dichalcogenides (TMDCs), boast ex-
ceptional light-emitting and light-harvesting properties,
along with an unprecedented ability to be fabricated
and transferred onto other photonic structures20. The
TMDCs,
in particular, hold great promise for inte-
grated photonics due to their large, direct bandgap21.
TMDCs embedded in microcavities have been employed
to observe optically pumped lasing22,23, cavity-enhanced
second harmonic generation? ,
electroluminescence24,
and strong coupling25,26. Finally, Wei et al. showed that
TMDCs patterned via electron beam lithography into cir-
cular nanodots with radii down to 15 nm could still host
long-lived excitons27.
In this paper, we analyze the optical nonlinearity of
a 2D-material monolayer coupled to a low mode-volume
photonic crystal defect cavity. The strength of the quan-
tum interaction can be revealed by its second-order co-
herence function g(2)(τ ). We identify different mecha-
nisms that give rise to non-classical photon distributions
and arrive at a robust regime, characterized by large dis-
sipation and weak nonlinearity, whose second-order co-
herence at zero time delay is much less than unity. Fi-
nally, we consider the effect of the size of the monolayer
on the system parameters. We numerically show that by
physically patterning the monolayer into different sizes, it
is possible to drive its dynamics from a coherent state into
a non-classical regime with g(2)(0) ∼ 10−3. An observa-
tion of such strong photon antibunching in this hybrid
platform would open the door to further experiments in
coupled nonlinear cavities and scalable quantum simula-
tors.
II.
SYSTEM DESCRIPTION
Our system consists of a patterned 2D-material mono-
layer placed on top of a photonic crystal nanobeam cav-
ity (see Fig. 1a)28. The choice of a nanobeam has been
motivated by its small cavity mode volume. The simu-
8
1
0
2
b
e
F
6
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
6
1
8
1
0
.
2
0
8
1
:
v
i
X
r
a
exciton-polariton system is given by (setting = 1)
H = ∆ca†a + ∆eb†b + g(cid:0)a†b + ab†(cid:1) + U b†b†bb + E(a† + a)
2
(II.1)
where a†(a) and b†(b) are the creation (annihilation) op-
erators for the cavity photon and the monolayer exciton,
respectively; ∆c = ωc − ωpump and ∆e = ωe − ωpump
are their frequency detunings relative to the pump laser;
g is the exciton-photon coupling strength; U is the on-
site Kerr nonlinearity representing the exciton-exciton
repulsion29; and E is the strength of the pump laser. The
system dynamics is given by the evolution of the density
matrix according to the master equation30:
i ρ = [H, ρ] + i
+ i
Γ
2
(cid:0)2aρa† − a†aρ − ρa†a(cid:1)
κ
2
(cid:0)2bρb† − b†bρ − ρb†b(cid:1)
(II.2)
(Color online) Patterned 2D
FIG. 1:
material-embedded cavity. (a) Schematic
illustration of the proposed experimental platform. A
patterned 2D-material (tungsten diselenide, WSe2)
monolayer is placed on top of a photonic crystal
nanobeam cavity. The radius of the monolayer is on the
order of tens of nanometers. The top view of the cavity
with a simulated field profile of the fundamental mode
is shown below. The calculated mode volume is about
2.5(λ/n)3. (b) Energy level diagram. The dressed states
are labeled by the number of energy quanta, or Fock
manifold, followed by a symbol: 1,−(cid:105) and 1, +(cid:105) are
the first-manifold states representing the lower and
upper polaritons; 2, e1(cid:105), 2, e2(cid:105), and 2, e3(cid:105) are the
second-manifold states. The solid lines represent the
eigenenergies of the Hamiltonian with nonzero
nonlinearity, whereas the dotted lines represent the
eigenenergies with zero nonlinearity. The arrows
represent the pump laser frequency that is resonant with
either 1, +(cid:105) (blue) or 2, e3(cid:105) (red). (c) Eigenenergies as
a function of the nonlinearity U, calculated via exact
matrix diagonalization. All parameters are normalized
by the exciton-photon coupling strength g.
lated field profile of the fundamental mode of the cav-
ity is shown below the schematic. Unlike the conven-
tional semiconductor-embedded distributed Bragg reflec-
tor cavity, whose excitons couple to a continuum of in-
plane momenta, the monolayer-embedded photonic crys-
tal cavity only supports a narrow band in the momen-
tum space. Thus, in our model we consider only those
excitons whose momenta match that of the fundamental
cavity mode17.
In a frame rotating at the frequency of an exter-
nal pump laser, the Hamiltonian of a strongly coupled
where κ and Γ are the inverse lifetimes of the cavity pho-
ton and the exciton, respectively.
The energy level diagram of the system containing up
to two energy quanta is shown in Fig. 1b, where we
have taken ωc = ωe. The degeneracy of the bare states
is lifted by the exciton-photon coupling. The dressed
states 1,−(cid:105) and 1, +(cid:105), containing one energy quan-
tum and collectively known as the first Fock manifold of
the Hamiltonian, represent the lower and upper polari-
tons, respectively. Similarly, the second-manifold states,
2, e1(cid:105), 2, e2(cid:105), 2, e3(cid:105), containing two energy quanta, be-
come nondegenerate. For zero exciton-exciton repulsion
(U = 0), their eigenenergies are −2g, 0, and 2g (dotted
lines), forming a harmonic energy ladder for two coupled
oscillators. For U > 0, however, the eigenenergies shift
(solid lines). The eigenenergies of the first (blue) and the
second (red) manifold as a function of U are plotted in
the rotating frame in Fig. 1c.
The shifting of the second-manifold eigenenergies due
to the exciton-exciton repulsion is the source of the quan-
tum optical nonlinearity. Consider tuning the pump laser
so that it resonantly excites the upper polariton 1, +(cid:105)
(blue arrows in Fig. 1b). Whereas the first photon from
the laser drives the system from 0(cid:105) to 1, +(cid:105), a second
photon cannot subsequently drive the system from 1, +(cid:105)
to 2, e3(cid:105) because the eigenenergy of 2, e3(cid:105) has shifted
out of resonance. On the other hand, if the pump laser
is tuned to half the energy of 2, e3(cid:105) (red arrows), it can
no longer excite 1, +(cid:105), while at the same time, it can
excite 2, e3(cid:105) via two-photon resonance. Thus, by mea-
suring the photonic content of the state of the system,
we can determine the strength of the nonlinearity.
The photonic content, in turn, can be measured by
detecting the light that leaks out of the cavity and an-
alyzing its temporal distribution. The second-order co-
herence function g(2)(τ ) yields the ratio of the detection
rate of photon pairs separated by a delay τ to that of
3
(Color online) g(2)(0) vs. pump laser frequency for different U. (a) A 2D plot of g(2)(0) versus pump
FIG. 2:
laser frequency detuning (x-axis) for different values of U (y-axis). The color corresponds to the base-10 logarithm of
g(2)(0). Four strong bunching peaks (red) are observed, three of which come from the second-manifold eigenstates.
The remaining bunching peak at ωpump = 0 is due to photon-induced tunneling7. Also observed are three strong
antibunching dips (blue): the first-manifold eigenstates (lower and upper polaritons) and a quantum-interference
dip. The other parameters are ωe = ωc = 0 and κ = Γ = 0.01g. (b) Horizontal cross-sections of (a) for U/g = 0.3,
0.67, and 1.5. When U/g is near 2/3, the location of the quantum interference dip overlaps with that of the upper
polariton at ωpump = g, yielding an extremely strong antibunching with g(2)(0) ∼ 10−7.
(Color online) g(2)(0) vs pump laser frequency for different Γ and U. (a-c) Γ/g = 0.1, 0.5, and 1.0,
FIG. 3:
with U/g ranging from 0.1 to 0.5. The pump laser frequency is relative to the exciton resonance, and ωe = ωc = 0.
(a) For small Γ, g(2)(0) resembles that in Fig. 2b, with the strong quantum interference-induced antibunching
appearing near ωpump = g. (b) For intermediate Γ, the antibunching dip at ωpump = g becomes shallow while a new
antibunching dip appears at a slightly negative ωpump. (c) This new antibunching dip, also due the destructive
quantum interference, can be significantly large with g(2)(0) ∼ 10−2.
single photons:
III. PARAMETER STUDY OF g(2)(0)
g(2)(τ ) =
(cid:104)a†(0)a†(τ )a(τ )a(0)(cid:105)
(cid:104)a†(0)a(0)(cid:105)2
(II.3)
In particular, for zero time delay, g(2)(0) = 1 indicates a
Poissonian distribution typical of classical light, whereas
g(2)(0) < 1 is a sub-Poissonian distribution and an exper-
imental smoking gun of a distinctly quantum process. In
the following section, we will investigate g(2)(0) in various
parameter spaces.
We first consider g(2)(0) for Γ (cid:28) g (cid:28) U. We assume
proach ±√
κ is equal to Γ. The second-manifold eigenenergies ap-
2g and 2U, the former pair resembling the
well-known anharmonic Jaynes-Cummings ladder for a
two-level qubit. The observation of photon antibunching
dips (g(2)(0) < 1) at the polariton resonances as well as
the bunching peaks (g(2)(0) > 1) at the energies of the
two second-manifold states has been extensively explored
in atomic31 and solid-state systems7.
4
(Color online) Minimum g(2)(0) for
FIG. 4:
different Γ and U. A 2D plot of the minimum value of
the g(2)(0) that appears at negative ωpump (see Fig. 3)
versus U (x-axis) and Γ (y-axis). The color represents
the base-10 logarithm of g(2)(0). For a given value of Γ,
strong antibunching is observed for a range of U. As Γ
increases, the optimal value of U as well as its width
increase. White dashed lines mark where g(2)(0) = 0.1.
For this simulation, κ is set at 0.5g. The dotted
appearance for strong antibunching is a numerical
artifact.
(Color online) g(2)(0) vs pump laser
FIG. 5:
frequency for different S. A plot of g(2)(0) versus
pump laser frequency detuning for different monolayer
area, with radius R ranging from 30 nm to 60 nm. The
strong antibunching appears for R = 42 nm. (inset)
The effect of R on the other parameters g, U, and Γ,
and consequently g(2)(0), can be seen by plotting the
parameters (black dotted line) on top of Fig. 4. As R is
changed, the set of parameters cuts across the region of
strong antibunching, making the system dynamics
tunable.
When U becomes comparable to g, there appears an-
other energy, separate from the polaritons, that produces
antibunching. As explained by Bamba et al.32, this anti-
bunching dip is a result of destructive quantum interfer-
ence between the first and the second manifolds, and its
energy is given by
2ω(cid:48)3 + 2U ω(cid:48)2 + g2U = 0
(III.1)
where ω(cid:48) = ω − i Γ
2 .
Figure 2 shows a plot of g(2)(0) versus the pump
laser frequency detuned from the cavity resonance at
multiple values of U. In addition to the first and the
second-manifold eigenenergies plotted in Fig. 1c, the
interference-induced antibunching is clearly observed in
Fig. 2a (the color represents the base-10 logarithm of
g(2)(0)). As U increases, the interference dip passes
through the upper polariton dip at ωpump = g. Figure.
2b shows the cross-sections of Fig. 2a for U/g = 0.3, 0.67,
and 1.5. For U/g = 0.67 (shown in green), the interfer-
ence dip coincides with the upper polariton dip, yielding
an extremely strong antibunching (g(2)(0) ∼ 10−7) .
Having explored Γ (cid:28) g ∼ U , we increase the dissi-
pation in our system until it becomes comparable to g,
which is more representative of typical solid-state envi-
ronments. In Fig. 3, we explore three separate values of
Γ/g: 0.1, 0.5, and 1.0. For each one, we plot g(2)(0) ver-
sus the pump laser detuning for a range of U values. As Γ
increases, previously sharp features become rounded, and
what used to be a strong antibunching dip at ωpump = g
becomes gradually shallower (Fig. 3a).
For large Γ, on the other hand, an additional anti-
bunching dip appears. As seen in Fig. 3b and c, this
dip only appears for U < Γ, and the value of U at which
it appears depends on how close Γ/g is to unity. The
origin of this antibunching is once again the destructive
quantum interference32, which has been extensively in-
vestigated by Liew et al.
in the context of "polariton
boxes"33. For a given Γ, Eq. III.1 gives the optimum U
and ω that produce the smallest g(2)(0).
Figure 4 displays a two-dimensional color plot of min-
imum g(2)(0) as a function of Γ and U. Here we set
κ = 0.5g. The color represents the base-10 logarithm of
g(2)(0), ranging from red (g(2)(0) ≈ 1) to blue (g(2)(0) ≈
10−6). We have indicated on the plot with white dotted
lines where g(2)(0) = 0.1, showing that the domain of U
that produces strong antibunching increases with Γ.
IV. PROPOSED EXPERIMENTAL DESIGN
To observe the strong, interference-induced antibunch-
ing, we propose to pattern a 2D-material monolayer into
a circular island with radius R and place it on a thin pho-
tonic crystal cavity (see Fig. 1a). We assume that the
5
While the cavity loss for a typical nanobeam is fixed
(κ = 2π× 150 GHz)28, the exact dependence of Γ on R is
unknown and remains an open problem. It has been re-
ported that patterned monolayers on the order of tens of
nanometers in radii can suffer from linewidth broadening
due to the presence of edge states. Since the length of the
edge scales linearly with R and the loss has been seen to
increase for smaller monolayers, for our simulations, we
have chosen to fix Γ = 2π × 300 GHz at R = 50 nm, an
experimentally measured value, and vary it as 1/R28.
Figure 5 shows the effect of changing R on g(2)(0). As
R increases from 30 nm to 60 nm, an antibunching dip ap-
pears, becomes sharper, and then recedes. The strongest
antibunching occurs at R = 42 nm. The inset shows how
the appearance of the dip compares to the general an-
tibunching behavior in Fig. 4. The black dotted line,
representing changing R, cuts across the region of strong
antibunching, exhibiting the system's tunability.
Finally, we explore the robustness of the antibunching
dip for unequal cavity and exciton detunings, i.e., ωc (cid:54)=
ωe. Figure 6 shows a plot of g(2)(0) as a function of ωc and
ωe for the optimal paramters (R = 42 nm, g = 2π × 560
GHz, Γ = 2π× 360 GHz, κ = 2π× 150 GHz, U = 2π× 40
GHz), where the color represents the base-10 logarithm
of g(2)(0). While the antibunching behavior is observed
only for a narrow range of the exciton detuning (x-axis),
it survives for a much larger range of the cavity detuning
(y-axis), giving us substantial leeway in the fabrication
precision of the nanobeam cavity.
V. CONCLUSION
We have explored the second-order coherence of a 2D-
material monolayer embedded in a photonic crystal cav-
ity and identified a range of system parameters that yield
strong photon antibunching. We have shown that by pat-
terning the monolayer into different sizes, we can tune the
system dynamics, driving it from a weak to a strong pho-
ton antibunching regime. The successful implementation
of the experimental design will open the door to a new
regime of quantum interference-based quantum simula-
tions on a scalable, on-chip platform.
VI. ACKNOWLEDGEMENTS
This work was supported by the National Science
Foundation under grants NSF-EFRI-1433496 and NSF-
1708579 and the Air Force Office of Scientific Research-
Young Investigator Program under grant FA9550-15-1-
0150.
(Color online) g(2)(0) vs ∆e vs ∆c. A 2D plot
FIG. 6:
of g(2)(0) versus exciton detuning (x-axis) and cavity
detuning (y-axis) for monolayer radius R = 42 nm. The
color represents the base-10 logarithm of g(2)(0).
Clearly, the variance is much greater for the exciton
detuning compared to that for the cavity detuning.
area of the patterned monolayer is much smaller than
that of the cavity mode, i.e., R (cid:28) Rmode. We also as-
sume that the monolayer is free of any defect such that
the excitons are delocalized over the entire monolayer
area. Hence, the spatial extent of the exciton wavefunc-
tion is equal to the physical size of the monolayer.
Both the exciton-photon coupling g and the nonlinear-
ity U depend on the size of the monolayer. The former
is given by34
(cid:115)
dcvφ(0)√ωc
√
g =
πR2
πR2
mode
(IV.1)
20Lc
φ(0) = (cid:112)2/(πaB)2 is the amplitude of the exciton
is the interband dipole matrix element,
where dcv
wavefunction (aB is the exciton Bohr radius), ωc is
the cavity resonance frequency, 0 is the permittivity
of free space, and Lc is the effective length of the cav-
ity mode. The nonlinear interaction strength is given
by U = 6Eba2
B/(πR2), where Eb is the exciton binding
energy? .
Thus, g ∼ R and U ∼ 1/R2, allowing us to tune the
system dynamics by patterning the monolayer into dif-
ferent areas via, for instance, electron beam lithography.
For a WSe2 monolayer with R = 5 nm coupled to a SiN
nanobeam cavity with Rmode = 1 µm, g ≈ 2π × 700 GHz
and U ≈ 2π × 30 GHz34.
1 A. Kiraz, M. Atature, and A. Imamoglu, Phys. Rev. A
2 A. Kuhn, M. Hennrich, and G. Rempe, Phys. Rev. Lett.
69, 032305 (2004).
89, 067901 (2002).
6
3 G. J. Milburn, Phys. Rev. Lett. 62, 2124 (1989).
4 W. S. Bakr, J. I. Gillen, A. Peng, S. Folling,
20 T. Fryett, A. Zhan, and A. Majumdar, Nanophotonics
and
(2017).
M. Greiner, Nature (London) 462, 74 (2009).
5 M. H. Devoret and R. J. Schoelkopf, Science 339, 1169
(2013).
6 A. Majumdar, M. Bajcsy, and J. Vuckovi´c, Phys. Rev. A
85, 041801 (2012).
7 A. Faraon, I. Fushman, D. Englund, N. Stoltz, P. Petroff,
and J. Vuckovi´c, Nat. Phys. 4, 859 (2008).
8 A. Reinhard, T. Volz, M. Winger, A. Badolato, K. J. Hen-
nessy, E. L. Hu, and A. Imamoglu, Nat. Photonics 6, 93
(2012).
9 V. Negoita, D. W. Snoke, and K. Eberl, Applied Physics
Letters 75, 2059 (1999).
10 M. J. Hartmann, Journal of Optics 18, 104005 (2016).
11 N. Y. Kim and Y. Yamamoto, "Exciton-polariton quan-
tum simulators," in Quantum Simulations with Photons
and Polaritons: Merging Quantum Optics with Condensed
Matter Physics, edited by D. G. Angelakis (Springer In-
ternational Publishing, Cham, 2017) pp. 91–121.
12 I. Carusotto and C. Ciuti, Rev. Mod. Phys. 85, 299 (2013).
13 I. Carusotto, D. Gerace, H. E. Tureci, S. De Liberato,
C. Ciuti, and A. Imamoglu, Phys. Rev. Lett. 103, 033601
(2009).
14 H. Deng, H. Haug, and Y. Yamamoto, Rev. Mod. Phys.
82, 1489 (2010).
15 D. Sanvitto and S. K´ena-Cohen, Nat. Mater. 15, 1061
(2016).
16 B. Besga, C. Vaneph, J. Reichel, J. Est`eve, A. Reinhard,
J. Miguel-S´anchez, A. Imamoglu, and T. Volz, Phys. Rev.
Applied 3, 014008 (2015).
17 G. Munoz-Matutano, A. Wood, M. Johnson, X. V. Asen-
sio, B. Baragiola, A. Reinhard, A. Lemaitre, J. Bloch,
A. Amo, B. Besga, et al., arXiv preprint arXiv:1712.05551
(2017).
18 V. Verma and J. Coleman, Applied Physics Letters 93,
111117 (2008).
21 Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman,
and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012).
22 S. Wu, S. Buckley, J. R. Schaibley, L. Feng, J. Yan, D. G.
Mandrus, F. Hatami, W. Yao, J. Vuckovic, A. Majumdar,
and X. Xu, Nature (London) 520, 69 (2015).
23 Y. Ye, Z. J. Wong, X. Lu, X. Ni, H. Zhu, X. Chen,
Y. Wang, and X. Zhang, Nat. Photonics 9, 733 (2015).
24 C.-H. Liu, G. Clark, T. Fryett, S. Wu, J. Zheng, F. Hatami,
X. Xu, and A. Majumdar, Nano Letters 17, 200 (2017),
pMID: 27936763.
25 X. Liu, T. Galfsky, Z. Sun, F. Xia, E. chen Lin, Y.-H. Lee,
S. Kena-Cohen, and V. M. Menon, 9, 30 (2014).
26 S. Dufferwiel, S. Schwarz, F. Withers, A. A. P. Trichet,
F. Li, M. Sich, O. D. Pozo-Zamudio, C. Clark, A. Nalitov,
D. D. Solnyshkov, G. Malpuech, K. S. Novoselov, J. M.
Smith, M. S. Skolnick, D. N. Krizhanovskii, and A. I. Tar-
takovskii, Nat. Commun. 6 (2015), 10.1038/ncomms9579.
27 G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev,
and N. P. Stern, Sci. Rep. 7 (2017),
I. W. Jung,
10.1038/s41598-017-03594-z.
28 T. K. Fryett, Y. Chen, J. Whitehead, Z. M. Peycke, X. Xu,
and A. Majumdar, arXiv preprint arXiv:1709.02032
(2017).
29 Y. Sun, Y. Yoon, M. Steger, G. Liu, L. N. Pfeiffer, K. West,
and K. A. Nelson, Nat. Phys. 13, 870 EP
D. Snoke,
(2017), article.
30 A. Kavokin, J. Baumberg, G. Malpuech, and F. Laussy,
Microcavities, Series on Semiconductor Science and Tech-
nology (Oxford University Press New York, 2007).
31 K. M. Birnbaum, A. Boca, R. Miller, A. D. Boozer, T. E.
and H. J. Kimble, Nature (London) 436, 87
Northup,
(2005).
32 M. Bamba, A. Imamoglu, I. Carusotto, and C. Ciuti, Phys.
Rev. A 83, 021802 (2011).
33 T. C. H. Liew and V. Savona, Phys. Rev. Lett. 104, 183601
19 L. Lee, L. Zhang, H. Deng, and P.-C. Ku, Applied Physics
(2010).
Letters 99, 263105 (2011).
34 H.-X. Wang, A. Zhan, Y.-D. Xu, H.-Y. Chen, W.-L. You,
A. Majumdar, and J.-H. Jiang, J. Phys. Condens. Matter
29, 445703 (2017).
|
1807.01728 | 3 | 1807 | 2018-11-17T22:00:28 | Nonlinear Chiral Transport in Dirac Semimetals | [
"cond-mat.mes-hall"
] | We study the current of chiral charge density in a Dirac semimetal with two Dirac points in momentum space, subjected to an externally applied time dependent electric field and in the presence of a magnetic field. Based on the kinetic equation approach, we find contributions to the chiral charge current, that are proportional to the second power of the electric field and to the first and second powers of the magnetic field, describing the interplay of the chiral anomaly and the drift motion of electrons moving under the action of electric and magnetic fields. | cond-mat.mes-hall | cond-mat | a
Nonlinear Chiral Transport in Dirac Semimetals
Alexander A. Zyuzin,1, 2 Mihail Silaev,3 and Vladimir A. Zyuzin4
1Department of Applied Physics, Aalto University, P. O. Box 15100, FI-00076 AALTO, Finland
2Ioffe Physical -- Technical Institute, 194021 St. Petersburg, Russia
3Department of Physics and Nanoscience Center, University of Jyvaskyla,
P.O. Box 35 (YFL), FI-40014 University of Jyvaskyla, Finland
4Department of Physics and Astronomy, Texas A&M University, College Station, Texas 77843-4242, USA
We study the current of chiral charge density in a Dirac semimetal with two Dirac points in
momentum space, subjected to an externally applied time dependent electric field and in the presence
of a magnetic field. Based on the kinetic equation approach, we find contributions to the chiral charge
current, that are proportional to the second power of the electric field and to the first and second
powers of the magnetic field, describing the interplay of the chiral anomaly and the drift motion of
electrons moving under the action of electric and magnetic fields.
I.
INTRODUCTION
The Weyl and Dirac semimetals are recently discov-
ered materials, whose conduction and valence bands with
linear energy dispersion touch at a number of Weyl or
Dirac points in the Brillouin zone [1 -- 6]. These systems
belong to the Fermi point universality class of fermionic
vacua [2] and possess nontrivial topology of the electronic
band structure. The non degenerate Weyl point might
be described as a monopole sink or source of the Berry
curvature and assigned with a topological charge, an in-
tegral of the Berry curvature over the surface enclosing
the point. Since the net topological charge is zero, Weyl
points always appear in pairs of opposite charge. The
Dirac point might be composed of two Weyl points with
topological charges of opposite sign. In certain classes of
three-dimensional semimetals such Dirac points occur in
pairs separated along a rotation axis of the crystal pro-
vided both time-reversal and inversion symmetries are
not broken [7 -- 10].
One of the distinct properties of Weyl and Dirac
semimetals is the chiral anomaly, which is a non-
conservation of chiral charge induced by the externally
applied parallel electric and magnetic fields [11, 12]. The
presence of the chiral charge imbalance leads to a num-
ber of phenomena such as for example the chiral mag-
netic effect - charge current driven along the magnetic
field [13], chiral electric separation effect - the flow of
chiral charge imbalance along the electric field [14], the
quantum and classical negative magnetoresistance [15 --
20], and contributions to the nonlinear optical response
[21 -- 28]. Another anomalous transport phenomena, al-
though unrelated to the chiral anomaly, is the chiral sep-
aration effect, which describes the flow of fermions with
opposite chiral charges in opposite directions along with
the external magnetic field [29, 30]. The progress in the
topological semimetals is reviewed in Ref. [31].
Recently, a question of the interplay of the chiral
anomaly and the nonlinear chiral transport was ad-
dressed for a ferromagnetic Weyl semimetal [32]. Based
on the kinetic equation approach [33, 34], it was shown
that the chiral anomaly might lead to quadratic in elec-
tric field corrections to the chiral charge current.
Here, we study the chiral charge current driven by a
time-dependent electric field in the presence of a mag-
netic field in the Dirac semimetal, with a pair of Dirac
points in it's band structure. Besides the chiral charge
imbalance, the chiral anomaly generates a spin imbalance
in each Dirac valley, such that the total spin polarization
in the system is zero, although the staggered spin polar-
ization is induced. We show that the chiral charge cur-
rent as well as the current of staggered spin polarization
is proportional to the second power of the electric field
and is described by joint action of the chiral anomaly
and the electron motion in the presence of the electric
and magnetic fields.
II. MODEL
Let us consider a model of the inversion and time re-
versal symmetric gapless Dirac semimetal with two Dirac
points separated in momentum space on the crystal rota-
tion axis (one might have in mind Cd3As2 and Na3Bi as
particular material candidates). The system is described
by the Hamiltonian
H(k) = v(σxszkx − σyky) + m(kz)σz + δH(k),
(1)
−+s−k2
where m(kz) = m1k2
z − m0, in which m0m1 > 0, and
σ and s are the vectors composed of the three Pauli
matrices denoting the pseudo-spin and spin degrees of
freedom (we set = 1). The Hamiltonian δH(k) =
+) ∝ O(k3) is a small correction, which
γσxkz(s+k2
is off-diagonal in spin space. Two Dirac points are sepa-
rated by a distance 2pm0/m1 along z-axis in momentum
space. Provided δH(k) = 0 the Hamiltonian in Eq. 1 is
block diagonal and one can introduce a sign, s = ±, to
label the eigenvalues of sz.
To proceed, we consider a spherical Fermi surface, set
2√m0m1 ≡ v, and linearize the Hamiltonian around
each Dirac point as Hη,s(k) = v(sσxkx − σyky + ησzkz),
where the momentum in each valley is now measured
relatively to the corresponding point, which is labeled by
η = ±, as kz → kz − ηpm0/m1. We note that each
Dirac point is composed of two Weyl points of opposite
topological charge, which are related by the time reversal
symmetry and determined by the spin eigenvalues. The
Berry curvature for each of four Weyl points is given by
Ωη,s = ηsk/2k2, where k = k/k is the unit vector in the
direction of momentum.
In the absence of the spin-flip processes, the sz-
component of the spin is conserved, allowing one to in-
troduce the topological charge for the spin-up and spin-
where the integral is taken over the surface S enclos-
ing the Weyl node. While the total topological charge
down electrons Cη,+ − Cη,−, with Cη,s =RS dS· Ωη,s/2π,
Pη(Cη,+ + Cη,−) is zero, the staggered spin charge is
finite, Pη η(Cη,+ − Cη,−)/2 = 2; for a more detailed dis-
cussion of Z2 topological charge in the Dirac semimetals,
see Refs. [7 -- 10].
In the situation where a magnetic field is applied to the
semimetal, one naturally expects the chiral separation ef-
fect. Turning on an electric field in addition to the mag-
netic field gives rise to a chiral anomaly with pronounced
nonlinear corrections to the chiral charge current. This is
in contrast to the chiral electric separation effect studied
in Refs. [14, 29, 30, 35], being linear in powers of electric
field.
A. Kinetic equation
Having established the model of the Dirac semimetal,
let us analyze the chiral charge current within the chiral
kinetic equation approach focusing on the zero tempera-
ture limit. This approach has been described extensively
in the literature and here we briefly outline the key points
[33, 34, 36 -- 38].
We assume a spatially homogeneous time-dependent
electric field
E(t) = E0(ω)e−iωt + E∗
0(ω)eiωt
(2)
and a magnetic field B applied to the system (we will
comment on the effect of the wave-vector dependence of
the electromagnetic field later in the conclusions). We
consider the case of electron doped semimetal, in which
the chemical potential is in the conduction band µ > 0,
neglect the Zeeman effect of a magnetic field compared
to its orbital effect, and focus on the response, which is
quadratic in powers of electric field.
e
The kinetic equation for the distribution function
fη,s(t, k) of the wave-packet with energy εη,s = ε(1 −
c B · Ωη,s), where ε = vk, reads
∂fη,s
∂k
= I[fη,s].
+ k ·
∂fη,s
(3)
∂t
The electric and magnetic field dependent higher order
corrections to the energy and to the Berry curvature do
not change the result and will be neglected [39]. The ki-
netic equation is supplemented by the solutions of equa-
tions of motion, which contain contributions from the
Berry curvature and orbital magnetic moment
2
1
c
r = D−1
k = eD−1
η,s(cid:26)E +
[vη,s × B] +
η,snvη,s + e[E × Ωη,s] +
(E · B)Ωη,s(cid:27) ,
(vη,s · Ωη,s)Bo , (4b)
where vη,s = ∂εη,s/∂k is the wave-packet velocity, I[fη,s]
is the collision integral, Dη,s = 1 + e
c (B· Ωη,s), and e < 0.
e
c
e
c
(4a)
B. Collision integral
The chiral charge is not strictly conserved when terms
nonlinear in momentum and spin-flip scattering processes
are included in the Hamiltonian [40]. For the collision in-
tegral in Eq. 3, we assume that the inter-valley scatter-
ing rate is exponentially suppressed with respect to the
intra-valley scattering rate. We then note that the Hamil-
tonian in Eq. 1 is block-diagonal in spin-space and the
z-component of the particle's spin is a conserved quan-
tity provided δH(k) is neglected. Turning on the spin-
flip processes, we adopt a model in which the intra-valley
spin-flip relaxation time is much longer than the intra-
valley spin-conserving relaxation time. We also assume
the magnetic length v/√ωcµ, where ωc = −ev2B/cµ is
the cyclotron frequency, to be much larger than the cor-
relation radius of the scattering potential. Hence the
spin-flip and valley-flip relaxation times can be consid-
ered magnetic field independent [41]. These assumptions
allow us to simplify the collision integral and separate
the intra-valley spin-conserving contribution
I[fη,s] = hfη,si − fη,s(t, k)
+ Λ[fη,s] + Iin[fη,s], (5)
where Iin[fη,s] describes the energy relaxation processes,
the valley-flip and spin-flip elastic scattering processes
are described by the functional
τ (ε)
Λ[fη,s] ≡ hf−η,s − fη,si
+ hfη,−s − fη,si
τV (ε)
,
+ hf−η,−s − fη,si
τ ′
V (ε)
in which τV (ε) and τ ′
conserving and spin-flip scattering times, τ ′
intra-valley spin-flip scattering time, and
τ ′
0(ε)
V (ε) are the inter-valley spin-
0(ε) is the
(6)
1/τ (ε) = 1/τ0(ε) + 1/τV (ε) + 1/τ ′
0(ε) + 1/τ ′
V (ε)
(7)
is the momentum relaxation rate of a particle with en-
ergy ε,
in which τ0(ε) describes the intra-valley spin-
conserving scattering processes. We consider the hierar-
chy of the elastic scattering times τ0(ε) < (τ ′
0(ε), τV (ε)) <
τ ′
V (ε), where the inter-valley spin-flip length vτ ′
V (µ) is
assumed to be smaller than the system size. Different
inter-node relaxation processes in the Dirac semimetal
were studied in detail in Ref. [42].
The triangle brackets h...i mean integration over the
directions of momentum, taking into account the change
scatterings Λ[fη,s]
field [33, 34], such that hfη,si ≡ R dΘ
of the phase space in the presence of the magnetic
4π Dη,s(k)fη,s(t, k).
The term describing the valley and spin flip elas-
tic
and can be related to the distribution function as
satisfies Pη,s Λ[fη,s] = 0
Pη,s ηs{Λ [fη,s] + hfη,si/τf (ε)} = 0, where 1/2τf (ε) ≡
1/τV (ε)+1/τ ′
0(ε) is an effective relaxation rate, which in-
cludes inter-valley spin-conserving and intra-valley spin-
flip scattering processes.
III. SOLUTION OF KINETIC EQUATION
Let us now study the chiral charge response of the
Dirac semimetal taking into account the inter and in-
tra valley scattering processes. To reveal the topolog-
ically nontrivial contributions we consider the limit of
weak magnetic field, in which the cyclotron frequency is
smaller than the electron momentum relaxation rate.
We search for the approximate solution of Eq. 3, keep-
ing contributions to the distribution function up to sec-
ond order of the electric field. Similarly to Ref. [43], we
the expand distribution function in powers of the incident
electric field,
fη,s(t, k) = f (0)
η,s (ε) +
+ f (2)
η,s (k) +
1
1
2hf (1)
2hf (2)
η,s (ω, k)e−iωt + c.c.i
η,s (2ω, k)e−2iωt + c.c.i ,
(8)
3
η,s (ε) ≈ f (0)(ε) − e
where f (0)
c (B · Ωη,s)ε∂εf (0)(ε) and
f (0)(ε) = θ(µ − ε) is the distribution function at zero
temperature, f (1)
η,s (ω, k) is the first order correction, and
η,s (k), f (2)
f (2)
η,s (2ω, k) are the second order corrections at
the zeroth and double frequencies, respectively. Follow-
ing Perel' and Pinskii [44], we set an additional constrain
on the second order correction
Xη,s Z d3kDη,sf (2)
η,s = 0,
(9)
meaning that the second order solution does not change
the concentration of particles.
The kinetic equation for the correction to the distribu-
tion function in n-th (n > 0) power of the electric field is
given by
(cid:18)inω −
e
c
D−1
η,s[vη,s × B] ·
∂
∂k(cid:19) f (n)
(E0 · B)Ωη,so ·
e
c
η,s + I[f (n)
η,s ]
∂f (n−1)
η,s
∂k
.
= eD−1
η,snE0 +
(10)
Physically, the solution to the equation linear in elec-
tric field [with n = 1 in Eq. 10] describes the elastic
scattering in the system, while the nonlinear solution
should also account for the energy relaxation. Hence,
neglecting the inelastic scattering in the collision inte-
gral, the solution of the first order differential equation
10 for f (1)
η,s (ω, k) is given by
f (1)
η,s (ω, k) =
τ (ε)
1 − iωτ (ε)(cid:20)hf (1)
η,si
τ (ε)
+ Λ[f (1)
η,s ] −
ev
Dη,s(cid:26) ηse
2ck2 (E0 · B) + E0 · k − κη,s
[E0 × B] + κη,sE0
1 + κ2
η,s
· k⊥(cid:27)∂εf (0)
η,s(cid:21), (11)
τ (ε)
ε ωcDη,s
where parameter κη,s(ε, ω) = µ
1−iωτ (ε) is intro-
duced for brevity, k⊥ is the unit vector in the direction
of momentum lying in the plane transverse to the direc-
tion of magnetic field B = B/B. The last term in Eq.
11 absorbs the contribution from the cyclotron part of
the Lorentz force. It is worth to note that the cyclotron
frequency in κη,s(ε, ω) is renormalized with the Berry
curvature.
Multiplying Eq. 11 with Dη,s and integrating over
the directions of momentum, one obtains an equation
for hf (1)
η,si in the form
−iωhf (1)
e2v
2ck2 (E0 · B)∂εf (0)
η,si = Λ[f (1)
η,s ] − ηs
e2v
6ck2 (E0 · B)h∂εf (0) + ε∂2
+ ηs
ε f (0)i , (12)
where the second line describes the contribution of the
orbital magnetic moment. We then find that the relax-
ation of the chiral imbalance
ηshf (1)
η,si = −
2e2v
3ck2
τf (ε)(E0 · B)
1 − iωτf (ε)
Xη,s
[2∂εf (0) − ε∂2
ε f (0)],
(13)
comes from the inter-valley spin-conserving and intra-
valley spin-flip scattering processes and describes the
emergence of non-equilibrium chiral charge as well as
staggered spin accumulations. This quantity is as-
sociated with the chiral anomaly.
The staggered
spin polarization in the Dirac semimetal, P(t) =
N −1Pη,s ηsR (dk)Dη,sfη,s(t, k), where N = 2µ3/3π2v3
is the electron density, in the lowest order in the electric
and magnetic fields P(ω) = 3ωc
is determined
by the (E0 · B) product. Finally, the sumPη,s f (1)
satisfies Pη,shf (1)
η,s gives
the standard expression for the first-order solution, which
The exact solution in the second order is rather cum-
bersome. However, we are interested in the limit of weak
magnetic field ωc < ω and keep up to quadratic in pow-
η,si =0.
(E0 · B)
1−iωτf
evτf
2µ
µ
ers of ωcτ corrections to the distribution function. The
solution can be formally written as
e
c
(14)
τ (ε)
τ (ε)Dη,s
f (2)
η,s (2ω, k) =
+ Iin[f (2)
η,s ]
v[k × B]
1 − 2iωτ (ε) ·
1 − 2iωτ (ε)(cid:26)hf (2)
η,si
τ (ε)
η,s 1 −
− eD−1
×hE0 +
∂k!
η,s (ω, k)(cid:27),
η,si ∝ ω2
where we neglect Λ[f (2)
µ2 (E0 ·
B)2 ≪ 1 is beyond the validity of our assumptions. The
difference between the momentum relaxation rates of the
first and second harmonics is also neglected.
(E0 · B)Ωη,si ·
η,s ], since Pη,s ηshf (2)
∂
∂k
f (1)
e
c
∂
c
To determine the contribution to hf (2)
0 one
has to take into account the inelastic processes [44] and
apply a condition of a constant concentration of particles
in the presence of the electric field. For the collision
integral, describing the inelastic processes, we consider
the simplest form
η,s (2ω)i ∝ E2
Iin[f (2)
η,s ] = −
f (2)
η,s
τin
,
(15)
where τin is the energy relaxation time of the electron due
to coupling to some thermal bath. Taking into account
only the terms that give dominant contribution to the
chiral charge current, we find
hf (2)
η,s (2ω)i =
e2v2
3
1 − 2iωτin (cid:20)∂ε
τin(E0 · E0)
τ (ε)
∂εf (0)
+
τ (ε)
1 − iωτ (ε)
(∂2
1 − iωτ (ε)
ε f (0) + 2ε−1∂εf (0))(cid:21).
k ·(cid:26)E0
η,s (ω, k)i,
evτ (ε)
(16)
(17)
We then obtain the second order correction in the form
f (2)
η,s (2ω, k) = hf (2)
η,s (2ω)i −
1 − 2iωτ (ε)
1 − 2iωτ (ε) (cid:27)∂εhf (1)
ev
τ (ε)[E0 × B]
ck
+
where we substitute f (1)
η,s (ω, k) with a solution of Eq. 12.
The expression for f (2)
η,s (k) can be found from Eq. 17
with the formal substitutions ω = 0, E · E → E2, and
E0hf (1)
η,s (ω, k)i. We are now in the
position to calculate the chiral charge current density.
η,s (ω, k)i → ReE∗
0hf (1)
4
The first term gives a finite contribution provided the
staggered spin polarization is induced. The second and
third terms are the corrections to the motion of the wave-
packet due to the nontrivial Berry curvature and describe
the chiral separation and inverse Faraday effects, respec-
tively. The terms on the second line describe corrections
from the orbital magnetic moment of the wave-packet.
We first consider the chiral transport in the collision-
less limit and neglect I[fη,s] in Eq. 3. The chiral charge
current density can be expanded in powers of the electric
field amplitude
j5(t) =
e2µ
π2c
B +(cid:2)j5(2ω)e−2iωt + c.c.(cid:3) /2,
(19)
where the first term describes the chiral separation effect
(for a review see Ref.
[14]). It is a non-dissipative chi-
ral current, which exists in the equilibrium state of chiral
fermions provided a magnetic field is applied [29, 30], and
doesn't depend on the orbital magnetic moment. The
other terms describe second-order correction at the dou-
ble frequency of the electric field.
In the collisionless limit at frequencies ω ≫ ωc, we
obtain
j5(2ω) = −
e3ωc
6π2ω2 [E0 × [ B × E0]].
(20)
We find that j5(2ω) vanishes for the parallel orientation
of electric and magnetic fields (the field dependence in
Eq. 20 matches the one derived for the strain induced
non-equilibrium spin current in the Dirac semimetal [45])
and does not depend on the orbital magnetic moment.
Although, turing on the scattering processes, different
inter-valley and intra-valley relaxation rates give rise to
a finite chiral current for parallel orientation of the fields.
At ωτ < 1, where τ ≡ τ (µ) is the momentum re-
laxation rate at the Fermi energy, we find a linear in
magnetic field contribution to the chiral charge current
density in the form
j5(2ω) =
2e3
3π2
ωcτ
1 − iωτ(cid:26)
τin
1 − 2iωτin
τf
−
G(ω)
1 − 2iωτ
1 − iωτf
E0(E0 · B)(cid:27),
(E0 · E0) B
(21)
where the model dependent coefficient G(ω) is deter-
mined by the scattering potential
ε2τ (ε)
1 − 2iωτ (ε)(cid:12)(cid:12)(cid:12)(cid:12)ε=µ
.
(22)
In the model of intra-valley short range potential, where
τ0(ε) ∝ ε−2, assuming other scattering times to be energy
independent, one estimates G(0) ∝ 1 − τ /τ0. Although,
for the model of the Coulomb impurities τ0(ε) ∝ ε2 one
gets G(0) = 2.
The first term in Eq. 21 describes the ac-field ∝ E2
0
induced change of the electron distribution function, be-
ing sensitive to the inelastic relaxation time. Similarly
IV. NONLINEAR CHIRAL CHARGE CURRENT
G(ω) = (1 − 2iωτ )
1
2µτ
∂ε
Let us define the chiral charge current density in the
(2π)3 Dη,s r(t, k)fη,s(t, k),
where explicitly
semimetal j5(t) = ePη,s ηsR d3k
(2π)3(cid:26)ηsvk +
j5(t) = eXη,s Z
d3k
+
ev
ck2
k(B · k) −
evB
2ck2 +
2ck2(cid:27)fη,s(t, k).
evB
e
2k2 [E(t) × k]
(18)
to the chiral separation effect, this contribution to the
chiral current is parallel to the magnetic field. The sec-
ond term in Eq. 21 describes the nonlinear chiral electric
separation effect, being more pronounced in the case of
collinear electric and magnetic fields. It is smaller than
the first term at ω → 0, provided τin ≫ τf . It is also
worth noting that the signs of two terms in Eq. 21 are
opposite. This describes the suppression of the chiral
current in the case of collinear fields being stronger at
frequencies much larger than the relaxation rates.
At ωτ < 1 we also find a correction to the chiral current
from the interplay of the chiral anomaly and the Hall
effect
j5,Hall(2ω) ∝ e3 (ωcτ )2
1 − iωτ
τf (E0 · B)
1 − iωτf
[ B × E0]
(1 − 2iωτ )2 .
(23)
This correction is smaller than the drift contribution
given in Eq. 21 provided ωcτ < 1.
The physical meaning of the contributions to j5(2ω)
can be understood if we consider a two-step process.
The first step contains long inter-valley scattering, which
equilibrates the spin imbalance generated due to chiral
anomaly ∝ (E0 · B). The second step is the drift motion
of particles within the valleys under the joint action of
the electric and magnetic fields, described by the Lorentz
force eE + e
c [v × B]. This is in contrast to the chiral
anomaly generated charge current, which is determined
by the inter-valley scattering processes [16, 17].
The contributions to the axial current in chiral plasma
produced by time-dependent electric and magnetic fields
and gradients of the chemical potentials were also con-
[35]. While the first term in Eq. 21
sidered in the Ref.
is new, the second term and the Hall contribution given
in Eq. 23 are compatible with the results of Ref.
[35],
provided the chiral chemical potential imbalance is field
induced and proportional to τf (E · B).
V. DISCUSSION AND CONCLUSIONS
So far, we have studied the effect of spatially homoge-
neous electric field. Briefly, we would like to comment on
the case when the electromagnetic wave has a spatial de-
pendence E(t, r) = E0 exp(−iωt+iq·r)+c.c. In this case,
a finite, linear in electric field contribution to the chiral
charge current is allowed. In order to evaluate it, the spa-
tial derivatives in the chiral kinetic equation have to be
taken into account, see, for example, Ref.
[38]. Indeed,
at ω = 0 and using τ ≪ τf , which determines the sit-
uation where the chiral anomaly is the dominant source
[1] A. A. Abrikosov and S. D. Beneslavskii, "Possible Ex-
istence of Substances Intermediate Between Metals and
Dielectrics," J. Exp. Theor. Phys. 32, 699 (1971).
5
to the chiral current, we find that the linear response
contribution is given by j5(ω, q) ∝ −ie2ωcτ µτf q(E0 · B).
Naturally, it is proportional to the wave-vector q of the
field, such that the chiral current remains invariant with
respect to a spatial inversion.
3π
2 E2
Let us now discuss the experimental feasibility of the
proposed effect. The amplitude of the first term in Eq. 21
α
can be written at zero frequency as j5 = − 16e
Iωcτ τin,
where I = cǫ0
0, α = e2/4πǫ0c is the fine structure
constant, and ǫ0 is the permittivity of free space (we have
restored here). Taking numerical values consistent with
experiment Ref. [46], µ ∼ 220 meV, v ∼ 9.3 × 107 cm/s,
and τ ∼ 0.5 ps, we estimate ωc ∼ 1 ps−1 at B = 0.2T,
which satisfies ωcτ < 1. Although the values of the in-
elastic relaxation time is not known, we might roughly
estimate it as τin ∼ 10τ . We obtain j5 ∼ 50I[ A/cm2
W/cm2 ],
which might be of the order of the quantized circular
photogalvanic effect in a Weyl semimetal studied in Ref.
[27].
The chiral charge current in a Dirac semimetal could
be probed indirectly via the interplay between the elec-
tric and chiral charge currents, which gives rise to the
chiral magnetic waves [38]. Although in ferromagnetic
Weyl semimetals, where the fields induce a finite spin
polarization, probing the chiral charge current might be
straightforward via nonlocal measurements similar to the
spin polarization in metals [47, 48] (a similar idea pro-
posed for the Weyl and Dirac semimetals was discussed
in Ref.
[42]). However, one needs to be able to extract
it from the total signal, which also contains large but
electric field and frequency independent contribution, de-
scribed by the chiral separation effect.
To conclude, we have calculated the nonlinear in the
electric field corrections to the chiral charge current in the
Dirac semimetal. These are proportional to the second
power of the externally applied electric field and consist
of contributions that are proportional to the first and
second powers of the magnetic field. We have also com-
mented on the chiral anomaly generated staggered spin
accumulation, i.e. the nonequilibrium spin polarization
in each Dirac valley of the semimetal, with vanishing net
spin polarization.
ACKNOWLEDGMENTS
A.Z. and M.S. are supported by the Academy of Fin-
land.
tions
Lect. Notes Phys. 718, 31 (2007).
from topology
in momentum space,"
[2] G.
E.
Volovik,
"Quantum
phase
transi-
quantum spin Hall
and
insulator
phases
[3] S. Murakami,
"Phase
transition
between
the
in
gapless phase,"
semimetals," Phys. Rev. B 94, 245121 (2016).
6
[11] S. L. Adler, "Axial-Vector Vertex in Spinor Electrody-
[32] V. A. Zyuzin, "Chiral electric separation effect in Weyl
→ γγ in
[33] D.
Xiao, M.-C.
Chang,
semimetals," Arxiv: 1803.00723.
"Berry
Rev. Mod. Phys. 82, 1959 (2010).
effects
phase
on
and Q. Niu,
properties,"
electronic
emergence
3D:
topological
New Journal of Physics 9, 356 (2007).
of
a
[4] X. Wan, A. M. Turner, A. Vishwanath,
and S. Y.
Savrasov, "Topological semimetal and Fermi-arc surface
states in the electronic structure of pyrochlore iridates,"
Phys. Rev. B 83, 205101 (2011).
[5] K.-Y. Yang, Y.-M. Lu,
and Y. Ran, "Quantum Hall
effects in a Weyl semimetal: Possible application in py-
rochlore iridates," Phys. Rev. B 84, 075129 (2011).
[6] A. A. Burkov and L. Balents, "Weyl Semimetal
Multilayer,"
in
Phys. Rev. Lett. 107, 127205 (2011).
Topological
Insulator
a
[7] T. Morimoto
and A.
Furusaki,
"Weyl
Dirac
semimetals with Z2
Phys. Rev. B 89, 235127 (2014).
topological
and
charge,"
[8] B.-J. Yang and N. Nagaosa, "Classification of sta-
ble three-dimensional Dirac semimetals with nontrivial
topology," Nat. Com. 5, 4898 (2014).
[9] E. V. Gorbar, V. A. Miransky, I. A. Shovkovy, and P. O.
Sukhachov, "Dirac semimetals A3Bi (A = Na, K, Rb) as
Z2 Weyl semimetals," Phys. Rev. B 91, 121101 (2015).
[10] B.-J. Yang, T. Morimoto, and A. Furusaki, "Topolog-
ical charges of three-dimensional Dirac semimetals with
rotation symmetry," Phys. Rev. B 92, 165120 (2015).
namics," Phys. Rev. 177, 2426 (1969).
[12] J. S. Bell and R. Jackiw, "A PCAC Puzzle: π0
the σ-Model," Nuovo Cimento A 60, 47 (1969).
[13] K.
H.
Phys. Rev. D 78, 074033 (2008).
Fukushima,
J. Warringa,
D.
E.
Kharzeev,
"Chiral magnetic
and
effect,"
[14] D. E. Kharzeev, J. Liao, S. A. Voloshine,
and
G. Wang, "Chiral magnetic and vortical effects in
high-energy nuclear collisions -- A status
report,"
Progr. Part. Nucl. Phys. 88, 1 (2016).
[15] H. B. Nielsen and M. Ninomiya, "The Adler-Bell-
in a crystal,"
fermions
Jackiw anomaly and Weyl
Phys. Lett. B 130, 389 (1983).
[16] D. T. Son and B. Z. Spivak, "Chiral anomaly and
classical negative magnetoresistance of Weyl metals,"
Phys. Rev. B 88, 104412 (2013).
[17] A. A.
Burkov,
"Chiral Anomaly
fusive
Phys. Rev. Lett. 113, 247203 (2014).
Magnetotransport
in Weyl
and Dif-
Metals,"
[18] Q. Li, D. E. Kharzeev, C. Zhang, Y. Huang, I. Pletikosi´c,
A. V. Fedorov, R. D. Zhong, J. A. Schneeloch, G. D.
Gu, and T. Valla, "Chiral magnetic effect in ZrTe5,"
Nature Physics 12, 550 (2016).
[19] V. A. Zyuzin, "Magnetotransport of Weyl semimetals due
to the chiral anomaly," Phys. Rev. B 95, 245128 (2017).
[20] B. Z. Spivak and A. V. Andreev, "Magnetotransport phe-
nomena related to the chiral anomaly in Weyl semimet-
als," Phys. Rev. B 93, 085107 (2016).
[21] L. Wu, S. Patankar, T. Morimoto, N. L. Nair, E. The-
walt, A. Little, J. G. Analytis, J. E. Moore,
and
J. Orenstein, "Giant anisotropic nonlinear optical re-
sponse in transition metal monopnictide Weyl semimet-
als," Nat. Phys. 13, 350 (2017).
[22] K. Taguchi, T. Imaeda, M. Sato, and Y. Tanaka, "Pho-
tovoltaic chiral magnetic effect in Weyl semimetals,"
Phys. Rev. B 93, 201202 (2016).
[23] T. Morimoto, S. Zhong, J. Orenstein, and J. E. Moore,
"Semiclassical theory of nonlinear magneto-optical re-
sponses with applications to topological Dirac/Weyl
[24] A. Cortijo, "Magnetic-field-induced nonlinear optical
responses in inversion symmetric Dirac semimetals,"
Phys. Rev. B 94, 235123 (2016).
[25] A. A. Zyuzin and A. Yu. Zyuzin, "Chiral anomaly
and second-harmonic generation in Weyl semimetals,"
Phys. Rev. B 95, 085127 (2017).
[26] E. J. Konig, H.-Y. Xie, D. A. Pesin,
and
A. Levchenko, "Photogalvanic effect in Weyl semimet-
als," Phys. Rev. B 96, 075123 (2017).
[27] F. de Juan, A. G. Grushin, T. Morimoto,
and J. E.
Moore, "Quantized circular photogalvanic effect in Weyl
semimetals," Nat. Com. 8, 15995 (2017).
[28] H. Rostami
and M. Polini,
"Nonlinear
anoma-
semimetals,"
lous
Phys. Rev. B 97, 195151 (2018).
photocurrents
in Weyl
[29] D. T. Son and A. R. Zhitnitsky, "Quantum anomalies in
dense matter," Phys. Rev. D 70, 074018 (2004).
[30] M. A. Metlitski and A. R. Zhitnitsky, "Anomalous axion
interactions and topological currents in dense matter,"
Phys. Rev. D 72, 045011 (2005).
[31] N. P. Armitage, E. J. Mele,
and A. Vishwanath,
"Weyl and Dirac semimetals in three-dimensional solids,"
Rev. Mod. Phys. 90, 015001 (2018).
[34] D. T. Son and N. Yamamoto, "Kinetic
theory
with Berry curvature from quantum field theories,"
Phys. Rev. D 87, 085016 (2013).
[35] E. V. Gorbar, I. A. Shovkovy, S. Vilchinskii, I. Rude-
nok, A. Boyarsky,
and O. Ruchayskiy, "Anomalous
Maxwell equations for inhomogeneous chiral plasma,"
Phys. Rev. D 93, 105028 (2016).
[36] Y. Gao, S. A. Yang, and Q. Niu, "Field Induced Posi-
tional Shift of Bloch Electrons and Its Dynamical Impli-
cations," Phys. Rev. Lett. 112, 166601 (2014).
[37] Y. Gao, S. A. Yang,
effects
rical
Phys. Rev. B 91, 214405 (2015).
orbital magnetic
in
and Q. Niu, "Geomet-
susceptibility,"
[38] E. V. Gorbar, V. A. Miransky, I. A. Shovkovy,
and
P. O. Sukhachov, "Second-order chiral kinetic the-
ory: Chiral magnetic and pseudomagnetic waves,"
Phys. Rev. B 95, 205141 (2017).
[39] We neglect quadratic in the fields terms to the energy
of the wave-packet, Refs. [36 -- 38]. These terms do not
contribute to Eq. 21, while corrections to the Hall contri-
bution to the chiral current 23 arising from these terms
are small τ µ ≪ 1.
[40] A. A.
Burkov,
in
"Negative
Dirac
longitudinal mag-
and Weyl metals,"
netoresistance
Phys. Rev. B 91, 245157 (2015).
[41] J. Behrends and J. H. Bardarson, "Strongly angle-
dependent magnetoresistance in Weyl semimetals with
long-range disorder," Phys. Rev. B 96, 060201 (2017).
[42] S. A. Parameswaran, T. Grover, D. A. Abanin, D. A.
Pesin, and A. Vishwanath, "Probing the Chiral Anomaly
with Nonlocal Transport in Three-Dimensional Topolog-
ical Semimetals," Phys. Rev. X 4, 031035 (2014).
[43] M. M. Glazov, "Second Harmonic Generation in
Graphene," JETP Letters 93, 366 (2011).
[44] V. I. Perel and Ya. M. Pinskii, "Direct-current in con-
ducting medium induced by high-frequency electromag-
netic field," Sov. Phys. Solid State 15, 688 (1973).
[45] Y. Araki, "Strain-induced nonlinear spin Hall effect in
topological Dirac semimetal," Arxiv: 1803.01693.
[46] T. Liang, Q. Gibson, M. N. Ali, M. Liu, R. J.
Cava,
and N. P. Ong, "Ultrahigh mobility and gi-
ant magnetoresistance in the Dirac semimetal Cd3As2,"
Nat. Mat. 14, 280 (2014).
[47] M. Johnson and R. H. Silsbee, "Interfacial charge-spin
coupling: Injection and detection of spin magnetization
in metals," Phys. Rev. Lett. 55, 1790 (1985).
[48] D. A. Abanin, S. V. Morozov, L. A. Ponomarenko, R. V.
Gorbachev, A. S. Mayorov, M. I. Katsnelson, K. Watan-
abe, T. Taniguchi, K. S. Novoselov, L. S. Levitov, and
A. K. Geim, "Giant Nonlocality Near the Dirac Point in
Graphene," Science 332, 328 (2011).
7
|
1511.06073 | 1 | 1511 | 2015-11-19T07:05:04 | Anderson transitions in disordered two-dimensional lattices | [
"cond-mat.mes-hall",
"cond-mat.dis-nn"
] | We numerically analyze the energy level statistics of the Anderson model with Gaussian site disorder and constant hopping. The model is realized on different two-dimensional lattices, namely, the honeycomb, the kagom\'e, the square, and the triangular lattice. By calculating the well-known statistical measures viz., nearest neighbor spacing distribution, number variance, the partition number and the dc electrical conductivity from Kubo-Greenwood formula, we show that there is clearly a delocalization to localization transition with increasing disorder. Though the statistics in different lattice systems differs when compared with respect to the change in the disorder strength only, we find there exists a single complexity parameter, a function of the disorder strength, coordination number, localization length, and the local mean level spacing, in terms of which the statistics of the fluctuations matches for all lattice systems at least when the Fermi energy is selected from the bulk of the energy levels. | cond-mat.mes-hall | cond-mat | a
Anderson transitions in disordered two-dimensional lattices
Dayasindhu Dey,1, ∗ Manoranjan Kumar,1, † and Pragya Shukla2
1S. N. Bose National Centre for Basic Sciences,
Block - JD, Sector - III, Salt Lake, Kolkata - 700098, India
2Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur - 721302, India.
(Dated: August 26, 2018)
We numerically analyze the energy level statistics of the Anderson model with Gaussian site dis-
order and constant hopping. The model is realized on different two-dimensional lattices, namely,
the honeycomb, the kagom´e, the square, and the triangular lattice. By calculating the well-known
statistical measures viz., nearest neighbor spacing distribution, number variance, the partition num-
ber and the dc electrical conductivity from Kubo-Greenwood formula, we show that there is clearly
a delocalization to localization transition with increasing disorder. Though the statistics in different
lattice systems differs when compared with respect to the change in the disorder strength only, we
find there exists a single complexity parameter, a function of the disorder strength, coordination
number, localization length, and the local mean level spacing, in terms of which the statistics of the
fluctuations matches for all lattice systems at least when the Fermi energy is selected from the bulk
of the energy levels.
PACS numbers: 71.23.An, 72.15.Rn, 72.80.Ng, 05.60.Gg
I.
INTRODUCTION
The effect of impurities in the low dimensional sys-
tems such as Graphene1 -- 4, nano flakes5, metallic thin
films6,7,arrays of quantum dots etc., has been an in-
tense area of research in the last decade. Some of these
low dimensional structures have potential applications
in electronic devices, because of their finite size and
the performance under varying degree of disorder and
dimensionality7,8.
In disordered systems delocalization
to localization transition is one of the intersting phe-
nomenon, therefore to caracterize this transition, analysis
of the electronic wavefunction is necessary. The extended
to localized transition, also known as the 'Anderson tran-
sition', and its dependence on various system parameters
such as, disorder, dimensionality, lattice structure, sys-
tem size etc., in the finite systems are a frontier area of
research. This motivates us to seek an estimation of the
critical disorder for the transition in finite size lattices
with different geometry.
In 1958, Anderson suggested that an electron inside
a material can be fully localized in the presence of a
large disorder9, whereas Edwards et al. showed that a
transition from an extended to a localized states in the
square lattice can occur at a disorder strength of 5 or 6
times higher than the band width of the Anderson model
Hamiltonian10.
In 1979, Abrahams et al. conjectured,
based on a scaling hypothesis, that the electronic states
are localized in less than three dimensional (3D) systems
in the presence of any amount of disorder11,12. The scal-
ing hypothesis was later on supported by many studies
of the Anderson model on square lattices13. Further,
Altshuler et al.
showed that weak electron interaction
enhances the localization in these systems, whereas un-
der strong electron interaction, 2D electrons behave like
a Wigner crystal and, as shown by Tanatar et al.14, even
a small amount of disorder can make the system insulat-
ing at zero temperature. The theoretical analysis15 sug-
gested that under strong electron interactions and small
disordered regime, 2D systems can be conducting. Most
of these studies are done for infinite systems and square
lattices, except some of the recent studies on the hon-
eycomb lattices4,16. A detailed review on the Anderson
transition is given in the Ref. 17.
The study of Anderson transition is not only important
for material sciences but also relevant to understand the
influence of the wavefunction dynamics on the physical
properties of the disordered systems. The presence of
disorder and/or interaction leads to a randomization of
the Hamiltonian, resulting in a random matrix represen-
tation in a physically suitable basis e.g., site basis. The
structure of the matrix e.g., degree of sparsity is sensitive
to various system conditions viz., dimensionality, shape,
size, and boundary conditions. The statistical behaviour
of the system can therefore be analysed by an ensem-
ble of the disordered Hamiltonians. Such analysis has
been a subject of extensive study during the past decade.
It is now well-known that, in the weak disorder regime,
the statistics can be well-modelled by the Wigner-Dyson
universality classes of random matrix ensembles which
correspond to extended, featureless eigenfunctions and
a strong level-repulsion with statistics of the eigenval-
ues and the eigenfunction independent from each other.
Increasing the disorder in finite size systems causes the
statistics to crossover from Wigner-Dyson to the Pois-
son universality class (with no level-repulsion and fully
localized eigenfunctions in strong disorder limit). The
statistics in the intermediate regime e.g., near critical
disorder is sensitive to the degree of eigenfunction lo-
calization which in turn is expected to depend on the
system conditions besides disorder. The study17,18 how-
ever, showed that the statistics can be well-modeled by
the single parametric power-law random banded matrix
(PRBM) ensembles. Another theoretical study19 later
(a)
(b)
(c)
(d)
FIG. 1.
(Color online) Two dimensional lattice structures
considered in this paper: (a) the honeycomb lattice with co-
ordination number 3, (b) the kagom´e and (c) the square lat-
tices both having 4 nearest neighbors and (d) the triangular
lattice with coordination number 6
on indicated the application of a wide range of random
matrix ensembles (besides PRBM) as the model for the
intermediate statistics; this study was based on the com-
mon mathematical formulation of the energy level statis-
tics of a broad class of random matrix ensembles (with
varying degree of sparsity and disorder but same sym-
metry class). The formulation is governed by a single
parameter, referred as the complexity parameter, a func-
tion of all system parameters including energy range of
interest and therefore different ensembles are expected to
show analogous statistics if their complexity parameters
are same19. As the theoretical claim about the existence
of a complexity parameter is in clear agreement with the
single parameter scaling conjecture of Ref. 11, it is highly
desirable to seek its numerical validity in disordered sys-
tems.
In this paper, we study the transitions from extended
to localized state of Anderson Hamiltonian on finite 2D
systems with different geometry in presence of the disor-
der. As shown in Fig. 1, we consider four lattice geome-
tries, namely, square, triangular, honeycomb and kagom´e
lattice which differ from each other in the coordination
number and their bond connectivity. The coordination
numbers of honeycomb, square, kagom´e and triangular,
lattice are three, four, four, and six respectively. We note
that the square and the kagom´e both have four nearest
neighbour but their spectrum is completely different be-
cause of the bond connectivity. The paper is organized
as follows.
In section II, we introduce the model dis-
ordered Hamiltonian; here the theory leading to single
parameter based formulation of the spectral statistics is
also briefly reviewed. The section III briefly describes
the statistical measures used in our numerical analysis.
The section IV presents the details of the numerical tech-
niques as well as results; this section is divided into four
2
sub-sections one for each lattice system. The compari-
son of the statistics of physical parameters with respect
to the single complexity parameter for various lattices is
given in section V. In section VI, results are discussed
and compared with the existing literature.
II. THE MODEL
The Hamiltonian: We consider the standard Ander-
son model9 under tight binding approximation realized
on four different 2D lattice systems. The tight binding
model Hamiltonian is well suited for a metallic system,
where electron-electron interactions are screened. The
Hamiltonian can be written in a single particle basis as
H =Xi
ǫiiihi +Xhi,ji
tijiihj,
(1)
where ǫi, and tij are random site energies and the near-
est neighbour hopping energies. In this work, the sites
energies are considered Gaussian distributed for each lat-
tice system and the hopping energies are kept constant:
tij = −1.0. The Gaussian type site disorder has been
widely studied for the square lattice system and has a
close analogy with real thin film materials.
The ensemble: The presence of the disorder in the sys-
tem makes it inevitable to consider an ensemble of the
Hamiltonians. For the Hamiltonian in Eq.(1) with on-
site random energies, the probability density ρ(H) of the
ensemble including all possibilities can be written in gen-
eral as
ρ(H) = C exp"−Xk
1
2hkk
(Hkk − bkk)2#
× Yk,l;k6=l
δ(Hkl − fkl),
(2)
where C is the normalization constant, fkl = t if {k, l}
correspond to nearest neighbour sites and otherwise fkl =
0. Writing the delta function as a limiting Gaussian
(δ(x) = limv→0
), reduces Eq.(2) to the
following form
1√2πv2 e−x2/2v2
1
hkl
ρ(H, h, b) = C exp
Xk≤l
(Hkl − bkl)2
kli − hHkli2,
where h is the set of all variances hkl = hH 2
and b is the set of all mean values bkl = hHkli. Here, for
constant hopping between nearest neighbor sites and an
onsite Gaussian disorder W in Eq.(1), one has
,
(3)
hkk = W 2/12,
hkl = 0,
bkk = 0,
bkl = −f (kl)t,
(4)
(5)
where f (kl) = 1 for {k, l} pairs representing nearest
neighbors and zero otherwise. The statistical behavior of
the Hamiltonian H, Eq.(1), can now be analyzed using
the ensemble (3). An important aspect of Eq.(3) is that
it can represent the ensemble density for a wider class of
lattice systems under different conditions e.g., random,
anisotropic, variable range hopping, dimensionality and
boundary conditions; the only constraint on these system
is to preserve the time-reversal symmetry which allows H
to be real-symmetric. Its form is therefore appropriate
for the verification of single parameter scaling conjecture.
Single parameter formulation: Before proceeding to
numerical analysis,
it is helpful to briefly review the
complexity parametric formulation of the spectral statis-
tics. The variation of system conditions in general re-
sult in a variation of the distribution parameters h and
b and therefore an evolution of the H-ensemble. As dis-
cussed in Ref. 19 and 20, under a change of parameters
hkl → hkl + δhkl and bkl → bkl + δbkl, ρ(H) undergoes
a diffusion dynamics along with a finite drift, and, using
Gaussian nature of ρ(H), it can exactly be shown that
T ρ = Lρ,
(6)
3
eigenvalues are uncorrelated in insulator limit, thus im-
plying P ({En}) = Qi<j Pn(En)21. The distribution for
the intermediate states of localization can be derived by
integrating ρ over the associated eigenvector space. As
shown in Ref. 19, an integration of Eq.(9) leads to a sin-
gle parametric diffusion of the eigenvalue distribution of
the ensemble (3)
P. (12)
+ En
∂P
∂Y
=Xn
∂
∂En
∂
∂En
+ Xm6=n
1
Em − En
The above equation can be used to obtain the ensemble
averaged level density as well as its local fluctuations19.
As discussed in Ref. 22, while the diffusion of the average
level density is governed by Y , the diffusion of its fluc-
tuations occurs at a scale determined by (Y − Y0) ∼ ∆2
l
where Y0 is the value of Y at the beginning of evolution
and ∆l is the local mean level spacing:
∆local(E) ≈ Ld ξ−d ∆(E)
(13)
where T is a combination of parametric derivatives, and
L is a diffusion operator in matrix space and are given
by
with ξ as the localization length and d as the dimension
(here d = 2). The statistics other than mean level density
is therefore governed by a rescaled parameter Λ(E):
T =Xk≤l(cid:20)(gkl − 2hkl)
∂
∂hkl − bkl
∂
∂bkl(cid:21)
and
L =Xkl
∂
∂Hkl (cid:20) gkl
2
∂
∂Hkl
+ Hkl(cid:21)
(7)
(8)
with gkl = 1 + δkl. A suitable transformation of para-
metric space maps T to a single parametric derivative,
T ρ = ∂ρ
∂Y , which in turn reduces Eq. (6) to a single para-
metric diffusion equation19,20
∂ρ
∂Y
= Lρ.
(9)
Here
Y = −1
N 2 Xk≤lh ln1 − (2 − δkl)hkl + ln bkl + δb02i+Cy
(10)
with Cy as an arbitrary constant and δb0 = 1 if bkl = 0
else δb0 = 0. For the ensemble described by the set of
parameters in Eq.(5), this leads to
Λ(E) = Y − Y0
∆2
l
.
(14)
The solution of Eq.(12) at Λ → ∞ corresponds to the
Wigner-Dyson statistics. The Λ → 0 limit correspond to
the distribution at the initial state of the evolution; for
an insulator initial state, the spectral statistics reduces
to the statistics of uncorrelated energy levels.
The transition parameter Λ is in general a function of
various parameters e.g., disorder, system size, dimension-
ality, energy range of interest, lattice topology. Although
both Y and ∆l contribute to the system dependence of Λ,
the crucial influence comes from ∆l due to its dependence
on the localization length ξ. For finite system sizes N ,
a variation of system conditions e.g., disorder leads to a
smooth crossover of statistics between the stationary lim-
its Λ → 0 and Λ → ∞. In infinite size limit, the statistics
abruptly changes from one stationary limit to the other.
If however, the limit Λ∗ = limN→∞ Λ(N ) exists, the cor-
responding statistics would belong to a universality class
different from the two stationary limits. The existence
of Λ∗ therefore is a criteria for the existence of critical
spectral statistics19.
.t + δt0z/2(cid:21) + Cy,
(11)
III. FLUCTUATION MEASURES: THE
DEFINITIONS
Y = −1
N
1 −
ln(cid:20)(cid:12)(cid:12)(cid:12)(cid:12)
W 2
12 (cid:12)(cid:12)(cid:12)(cid:12)
where z is the coordination number of the lattices.
The joint probability distribution of the eigenvalues
P ({En}) ≡ P (E1, . . . , EN ) for a metal (fully extended
eigenfunctions limit) is given by the Wigner-Dyson distri-
bution, P ({En}) =Qi<j Ei − Ej exp(− 1
k). The
2Pk E2
Our main objectives in this paper is to study the influ-
ence of the system conditions on the statistical behavior
and identify the critical regime. For this purpose, we
consider four different fluctuation measures namely, den-
sity of states (DOS), reduced partition number (P/L),
the peak position of the NNSD and the dc electrical con-
ductivity which can briefly be described as follows.
Spectral measures: A well-known measure to analyse
the short range correlations among energy levels is the
nearest neighbour spacing distribution (NNSD) which de-
scribes the probability P (s) of two nearest neighbour en-
ergy levels to be found at a distance s measured in the
units of the mean level spacing around the desired en-
ergy regime. For the weak disorder regime with extended
eigenfunctions, P (s) is given by the Wigner surmise
PW (s) =
π
2
s exp(cid:16)−
π
4
s2(cid:17) .
(15)
For the opposite limit of strong disorder with fully local-
ized wavefunctions, P (s) follows Poisson distribution
PP (s) = exp (−s) .
(16)
To compare the level spacing distribution for the entire
transition within an arbitrary energy regime for different
lattices, we use a traditional measure, namely, the cu-
mulative nearest neighbor spacing distribution ηi which
depends on the tail behaviour of the nearest neighbour
spacing distribution and is defined as
si
ηi = R ∞
P (s, Λ)ds −R ∞
PP (s)ds −R ∞
R ∞
si
si
si
PW (s)ds
PW (s)ds
,
(17)
where si, i = 1, 2 refer to the two crossing points of PW (s)
and PP (s): s1 = 0.473 and s2 = 2.00221,23,24. As the
system makes a transition from delocalized to localized
state, ηi changes from 0 to 1. While NNSD gives the short
range correlations of the energy levels, there is another
measure which gives the long range correlations, namely,
the number variance. It is defined as the variance of the
number n of unfolded energy levels in an energy interval r
centered at the energy regime of interest i.e., the number
variance Σ2(E, r) = h(n(E, r) − hn(E, r)i)2i.
Participation number: The dependence of Λ on the
localization length ξ through ∆l results in sensitivity
of the energy level statistics to eigenfunction behaviour.
This motivates to analyse a standard measure for the
eigenfunction localization, namely, the reduced partici-
pation number, referred here as P/L, which character-
ize the spread of eigenfunctions in the site basis. The
partition number P for a wavefunction ψn is defined as
ψin4 and is proportional to the localization
DC conductivity: The localization of electronic wave-
function can be characterized by the DC electrical con-
ductivity σ which can be measured also experimentally
for real systems. Here we numerically calculate σ using
Kubo-Greenwood formula (see Ref. 25 for details)
P −1 =PN
length.
i
σ(EF ) =
2π
Ω
Tr [Jδ(EF I − H)Jδ(EF I − H)]
(18)
where EF is the Fermi energy, H is the Hamiltonian, Ω
is the volume of the system and J is the one electron
4
current operator
~J =
ieV
Xhi,ji
(Ri − Rj )(iihj − jihi)
(19)
with Ri as the position vector of site i.
IV. NUMERICAL ANALYSIS AND RESULTS
To study the influence of system conditions on the sta-
tistical behavior, we apply exact diagonalization tech-
nique to numerically obtain the eigenvalues and the
eigenfunctions of the Hamiltonian (1) for four different
lattice types. For each lattice type, an ensemble of ap-
proximately 1000 realizations is considered to attain sta-
tistical accuracy. To explore the size-dependence of the
statistics and its sensitivity to the energy range, many
system sizes, varying from L = 40 to L = 100, are
analysed for each lattice type and for two energy ranges.
The latter correspond to two filling of the Hamiltonian:
firstly, the half-filling which is a more natural choice of
the systems like graphene, gold etc., and secondly, a fill-
ing where the density of states is significantly high, mak-
ing a rigorous statistical analysis of energy levels more
feasible. For the local fluctuations analysis, it is neces-
sary to first rescale the energy eigenvalues by the local
mean level spacing26 (also known as unfolding of the lev-
els). The average density of states for this purpose is
calculated using the binning method. To analyse the
local spectral fluctuations in the desired energy-range,
approximately ∼ 3% of the rescaled energy levels are
taken around the chosen Fermi energy. The rescaled en-
ergy levels and normalized eigenfunctions are then used
to calculate the density of states (DOS), reduced parti-
tion number (P/L), the peak position of the NNSD and
the dc electrical conductivity. The results are arranged in
order of increase in the coordination numbers in the sub-
sections A, B, C and D containing honeycomb, kagom´e,
square and triangular lattices respectively. Here we de-
scribe three different methods of calculation in detail for
the honeycomb lattice only; the calculations for other lat-
tice systems are carried out following similar methods.
A. Honeycomb lattice
The 2D honeycomb structure is one of the most in-
teresting lattice types which occurs in many systems of
industrial importance e.g., graphene.
In this case, the
non-interacting electronic models like uniform Anderson
model or tight binding model have two unique Dirac
cones in a brillouin zone (BZ). The DOS ρ(ǫ) for a 2D
honeycomb lattice in the clean limit (i.e. absence of dis-
order) is given by
ρ(ǫ) = −
1
π
Im(cid:20) lim
∆ǫ→0+Z1stBZ
dk
V
V 2 − µ2t2(cid:21) ,
(20)
W = 0
3.0
3.6
4.0
25.0
0.3
0.2
)
F
E
(
r
0.1
0
EF = -1.5
EF = 0
10
W
20
0.2
0.1
e)
(
r
0
-8
-4
0
e
4
8
20
10
r
e
b
m
u
N
n
o
i
t
a
p
i
c
i
t
r
a
P
0
0
5
5
4
x
W
3
2
0
0.01
0.02
1/L
0.03
2
4
W
6
FIG. 2. (Color online) The DOS of the honeycomb lattice.
The solid line shows the DOS in the absence of disorder.
Three disorders strength are chosen around the critical dis-
order (see table I). The DOS at very large disorder is also
shown. The inset shows the variation of DOS with disorder
at two energy regimes.
FIG. 3. (Color online) The partition number per unit length
with disorder for different system sizes are shown at (a) EF =
−1.5t and (b) EF = 0. The linear fits of the curves cut the
disorder axis at Wx. The insets of both (a) and (b) show the
critical disorder Wx with 1/L which are fitted with the lines:
Wx = 3.13 + 68.6/L for inset (a) and Wx = 2.64 + 72.6/L for
inset (b).
where V = ǫ + i∆ǫ and µ = exp(ikxa) + exp[i(−kxa/2 +
ky√3a/2)] + exp[i(−kxa/2 − ky√3a/2)] with kx and ky
as the components of the wave vector27; ρ(ǫ) in this
case vanishes at ǫ = ±3t.
In half-filled limit, the sys-
tem shows a gapless state and a linear dispersion relation
which can be mapped to that of a massless Dirac state.
In real materials, the vacancies can lead to coupling of
cones but coupling strength remains very small, the two
cones being separated by a large momentum vector28.
The microscopic calculation for the two valley Hamilto-
nian indicates a crossover from anti-localization to weak
localization28. A recent experiment also confirms the
anti-localization and weak localization of states at low
and high carrier concentration respectively (for defects
like charge impurity etc.).
To observe the effect of disorder, the DOS ρ(ǫ) is cal-
culated numerically for different disorders; the results are
shown in Fig. 2. In the clean system (W = 0), ρ(ǫ) is
vanishingly small near energy ǫ = 0 (the Fermi-energy at
half filling) and has van-Hove singularities at ǫ = ±t .
The effect of varying disorder on ρ(ǫ) at ǫ = −1.5t (i.e.,
at the bulk of DOS) and at ǫ = 0 (i.e., at the half filling)
is shown in the inset of Fig. 2. At the half filled energy
regime, ρ(ǫ) increases till W = 7.0t and then decrease ex-
ponentially as shown in the inset of the Fig. 2. In large
W limit, DOS becomes flat as shown in the Fig. 2. As
clear from the Fig. 2, the disorder has a significant im-
pact on the DOS of this lattice type in the energy regime
near ǫ = 0 (with DOS showing a prominent dip for small
disorder) and ǫ = ±1.5t. For the fluctuations analysis we
therefore, choose Fermi energy from these two regimes,
namely, ǫ = 0 (half filling) and ǫ = −1.5t (bulk).
Our next step is to seek the critical disorder for the
extended to localized state transition in the honeycomb
lattice by three different routes. While the transition in
principle takes place in the thermodynamics limit L → ∞
0.8
(a)
5
(i)
*
W
4
0.6
3
0
0.01 0.02 0.03
L-1
L = 40
50
70
100
W = 2.0
3.0
3.6
4.0
25.0
(ii)
0.8
)
S
P
(
0.4
k
p
S
0.4
0.2
0
0
0.8
(b)
0.6
k
p
S
0.4
0.2
0
0
0
0
1
2
S
3
0.1
0.2
W -1
0.3
0.4
6
(iii)
*
W
4
0
L = 40
50
70
100
0.01 0.02 0.03
L-1
(iv)
0.8
)
S
P
(
0.4
W = 2.0
3.6
4.0
4.5
25.0
0.1
0
0
0.2
W -1
1
2
S
0.3
3
0.4
FIG. 4. (Color online) The peak-position of the NNSD with
the inverse of the disorder (a) at EF = −1.5t and (b) at
EF = 0. The lines in the main part of (a) and (b) are the fitted
curves with the function 0.77 tanh((W ∗/W )2). The critical
disorder for various system sizes are depicted in insets (i) and
(iii). The insets (ii) and (iv) show the NNSD at different
disorders for the system size L = 100
(a)
3
(b)
ln Wc
0
1
ln W
2
0
s
n
l
-2
-4
-1
-2
-3
-4
s
n
l
0
1
ln W
2
3
FIG. 5. (Color online) The dc conductivity with disorder at
(a) ǫ = −1.5t and (b) ǫ = 0. The upper part in (b) is fitted
with: ln σ = 0.99 − 1.84 ln W and the lower part is fitted with
ln σ = 1.577 − 2.265 ln W which gives Wc = 3.9t.
at a critical disorder (or critical energy), the finite sys-
tems undergo a smooth crossover within a critical regime
(around critical disorder or energy). It is therefore imper-
ative to analyze the critical disorder Wcrit(L) for many
finite system sizes, with exact critical disorder given by
limL→∞ Wcrit(L) = Wcrit. For this purpose, we first
analyse the disorder dependence of the reduced partic-
ipation number P/L. Fig. 3 elucidates the behavior of
the reduced partition number at two Fermi energies at
(a) the bulk and (b) at the half filling respectively. For
each case P/L varies linearly with the disorder W in the
small disorder regime while it varies exponentially for
strong disorders. The linear portion of the curves are fit-
ted with lines (P/L = a−bW ) which cut the disorder axis
at Wx = a/b. For W > Wx, the localization length of the
systems is less than the system size. At W = Wx, the lo-
calization length become equal to the system size L, thus
suggesting Wx as the finite size critical disorder (more
clearly W pn
crit(L) = Wx with superscript referring to the
method applied) . (Note, for later reference, here we use
different notations for the critical disorder obtained by
different methods). The critical disorder measured from
this method for different system sizes of the honeycomb
lattice are given in the table I. As shown in the insets
6
of Fig. 3(a) and (b), Wx for different system sizes vary
linearly with the inverse of the system size. The numer-
ics reveals the sensitivity of Wx to Fermi energy too: for
L = 100, the value of Wx is 3.4 at the half filling and 3.8
at the bulk of the DOS.
Continuing with our quest for critical disorder, our
next step is to analyze the Nearest neighbor level spac-
ing distribution (NNSD) defined in section III. The de-
crease of disorder in the finite systems causes the NNSD
to crossover from the Poisson distribution (eq.(16)) to
the Wigner surmise (eq.(15)). To analyse the NNSD for
different disorder strengths, the energy eigenvalues are
apriori unfolded using the local mean level spacing. The
numerically obtained NNSD for a given disorder and sys-
tem size is compared with the Brody distribution29:
PB(S) = α(1 + ω)Sω exp(−bS1+ω)
(21)
which gives the Brody parameters ω and b as a function
of W and L. The fitted Brody distribution is then used
to calculate the peak position dependence on the disorder
strengths W for a fixed size L. The dependence is plot-
ted with respect to inverse of the disorder in Fig. 4 for
many system sizes and at two Fermi energies (the bulk
and the half filling). The curve depicting peak positions
with respect to disorder for each L is now fitted with the
function
F (W ) = 0.77 tanh((W ∗/W )n)
(22)
where n = 2 and W ∗ is the critical disorder strength
(in this method) at which localization occurs for a fi-
nite system size L (more clearly W nnsd
crit (L) = W ∗). This
type of functional dependence of the peak position of
NNSD was suggested by A J Millis et al.
in context
of the energy level statistics of one dimensional spin-1/2
chain to find the critical value Jc indicating integrable
and non-integrable boundary30. As shown in the main
Fig. 4 (b), there is large deviation in the peak position-
disorder curve from the function F (w) in the small dis-
order regime for the half filled case. F (W ) with n = 2
however fits well in small W limit for the case where the
Fermi energy is chosen away from the half filling. As
shown in the insets (i) and (iii) of Fig. 4 (a) and (b)
respectively, the crossover disorder W ∗ decreases with
system size L. Again W ∗ shows an energy dependence
for a fixed L: for L = 100, W ∗ = 3.9 and 3.6 for ǫ = 0
and ǫ = −1.5t respectively (see table I). The insets (ii)
and (iv) of Fig. 4 (a) and (b) also display the NNSD
behavior for ǫ = 0 and ǫ = −1.5t respectively. We notice
that for ǫ = 0 or half filled case the NNSD vary signif-
icantly in small impurity limit but the variation in the
bulk limit ǫ = −1.5t is weak below W = W ∗. The un-
usual behaviour can be explained from the rapid change
in the DOS with disorder at the half filling. The half fill-
ing case suggests that the system is still in the ballistic
limit for small disorder.
The electronic conductivity is an important character-
istic of the localization to delocalization transition, with
high conductivity an indicator of the large localization
ǫ
−1.5t
L
40
50
70
100
Wx
4.9
4.4
4.2
3.8
W ∗
5.2
4.8
4.3
3.9
Wc
3.9
TABLE I. Critical disorders calculated from all three methods
for the honeycomb lattice at two different Fermi energies for
four system sizes
length. The dc electrical conductivity for various system
sizes for the two energy ranges are calculated using the
Kubo-Greenwood formula. The minimum conductivity
σm of a clean sample at T = 0 and half-filled limit is an-
alytically predicted to be 4e2/πh; this is also confirmed
by our analysis. The effect of changing disorder on the
behavior of conductivity (σ) in honeycomb lattice is dis-
played in the figure 5 (a) and (b) at the bulk of DOS and
at the half filling respectively. In the bulk limit, the con-
ductivity decreases with increasing disorder following a
power law dependence with exponents −1.84 in the weak
disorder regime and −2.265 in the strong disorder regime.
The intersection of these two lines gives the crossover dis-
order W cond.
crit (L) = Wc = 3.9t which is almost in agree-
ment with the values calculated from the other two meth-
ods. The disorder-dependence of conductivity at the half
filling however shows some atypical behavior: it remains
almost constant at very small disorders up to W = 0.4t,
decreases thereafter up to W < 2.8t, then increases till
W = 5.0 and decrease afterwards for further increase in
W . A possible explanation of this flip-flop behavior may
lie in poor statistics due to small number of states avail-
able at this filling or due to dominant finite size effect.
We intend to probe this behavior with more numerical
rigor separately.
Next we compare the crossover values of Wcrit(L) cal-
culated from three different methods (i.e Wx, W ∗, Wc)
for four different L. Due to statistical reliability, the
comparison is shown in table I (only for the bulk energy
limit). As given in the table I, Wx and W ∗ decrease with
an increase in the system size L, varying as L−1 (As the
size dependence on the conductivity is negligibly small
for this case, we present the data for L = 100 case only).
This clearly indicates conductivity as a better measure to
find the critical disorder for the transition (due to faster
convergence with L). The analysis suggests the critical
disorder Wcrit ≈ 3.8.
B. Kagom´e lattice
0.2
0.2
(
r
e)
(
r
0.1
)
F
E
0.1
0
10
W
20
7
W = 0
4.5
5.0
6.0
21.0
0
-8
-4
0
e
4
8
FIG. 6.
(Color online) The DOS of the kagom´e lattice for
different disorders. The solid line is the DOS for the clean
system. The inset shows the DOS at half filling with the
disorder.
weight 1/3. The DOS diverges at three values of energy
(at ǫ = 0 and ±2t) and is zero for ǫ = −t for the clean
system31. The band width in the clean limit of this lattice
is spanned from ǫ = −4t to ǫ = 2t. Effect of the onsite
disorder on the DOS of the kagom´e lattice Hamiltonian
of system size L2 with L ∼ 100 is shown in the Fig. 6
for three disorder strengths alongwith the clean limit. As
clear from the figure, the singularities in the DOS vanish
with the increase in disorder, with DOS approaching a
Gaussian distribution in energy at very large disorder.
The inset in Fig 6 displays the behavior of the DOS at
the Fermi energy for varying disorders which turns out
to be an exponential decay in large disorder limit.
To determine the critical disorder Wcrit in this case,
we again apply the three methods mentioned in detail
for the honeycomb lattice. The results for reduced par-
20
15
/
L
P
10
5
0
0
7
6
x
W
5
4
0
0.01
0.02
1/L
0.03
L = 97
69
48
41
2
4
6
W
8
10
12
The DOS ρ(ǫ) of the Anderson model with uniform
site energy for a kagom´e lattice is exactly solvable in the
clean limit, and is composed of the two bands of the
honeycomb lattice shifted in energy by t with amplitude
reduced by a factor of 2/3 and a delta peak at ǫ = 2t with
FIG. 7. (Color online) The reduced partition number for dif-
ferent system sizes of the kagom´e lattice. The linear portion
of the curves are fitted with lines which cut the disorder axis
at Wx. The inset shows the critical disorder Wx with the
inverse of the system size and which follows the fitted line:
Wx = 4.0 + 91.3/L.
0.8
0.6
*
6
W
4
0
k
p
S
0.4
0.2
0
0
0.01 0.02 0.03
L-1
0.8
)
S
P
(
0.4
L = 40
50
70
100
W = 2.0
4.0
4.5
5.0
21.0
0.1
0
0
0.2
W -1
1
2
S
3
0.3
FIG. 8. (Color online) The peak-position of the NNSD vs the
inverse of the disorder. The lines in the main figure are fitted
curves with 0.77 tanh((W ∗/W )2). The top left inset shows
the critical disorder with the system size which follows: W ∗ =
3.67+108.5/L. The bottom right inset shows the NNSD of the
kagom´e lattice of system size L ∼ 100 for different disorders
ticipation number P/L are displayed in Fig. 7 for differ-
ent system sizes in the kagom´e lattice. As shown in the
inset of Fig. 7, the finite size critical disorder Wx calcu-
lated from this method varies linearly with the inverse
of the system size. The results for the search of crit-
ical disorder through the NNSD peak position analysis
are displayed in Fig. 8, for four different system sizes
of kogom´e lattice. Here again the curve describing peak
position-disorder dependence is fitted with the function
F (W ) given by Eq.(22) with n = 2. As shown in the
inset of Fig. 8, W ∗ decrease with system size L. The
behavior of NNSD shown in the inset of Fig. 8 indicates
a very small variance in NNSD for W < W ∗.
The disorder dependence of the electronic conductivity
for kagom´e lattice is displayed in Fig. 9 (shown here only
for L = 100); it reveals a decreasing conductivity with
0
-2
-4
-6
s
n
l
ln Wc
8
increase of disorder, along with two different power law
behaviors in small and large disorder ranges (indicated
by two linear regimes with different slopes in the log σ-
log W plot). For a system size L ≈ 100, the crossing
point of the two lines lies at Wc ∼ 5.9t.
Table II displays the critical disorder Wcrit(L) calcu-
lated from three different methods for four different sys-
tem sizes. Similar to the honeycomb lattice case; the size
dependence of Wc is not presented as it is negligibly small
for this system also. whereas Wx and W ∗ calculated from
participation number and shift in peak height of NNSD
is linear with L−1. Similar to the case of honeycomb lat-
tice, here again the calculations suggest a convergence of
Wc to its critical value lattice, once again confirming a
weaker sensitivity of the conductivity approach to finite-
ness of the kagom´e lattice.
L
40
50
70
100
Wx
6.2
5.9
5.3
4.9
W ∗
6.4
5.9
5.2
4.8
Wc
5.9
TABLE II. Critical disorders calculated from all three meth-
ods for the kagom´e lattice for four system sizes
C. Square lattice
The DOS ρ(ǫ) of an Anderson model with uniform site
energy for a square lattice at the clean limit can be cal-
culated from the band dispersion relation
ǫ(k) = 2t(cos kx + cos ky).
(23)
In the clean limit, the DOS has a van Hove singularity at
W = 0
W = 5.0
W = 5.6
W = 6.5
W = 25.0
0.3
0.2
)
F
E
(
r
0.1
0
4 8 12 16 20 24
W
0.2
e)
(
r
0.1
0
1
ln W
2
3
0
-12
-8
-4
0
e
4
8
12
FIG. 9. (Color online) DC conductivity of the kagom´e lattice
of linear size ≈ 100 with disorder. The upper part of the plot
follows:
ln σ = 0.938 − 1.9 ln W and the lower part follows:
ln σ = 3.514 − 3.2 ln W and the critical disorder Wc = 5.9.
FIG. 10.
(Color online) The DOS of the square lattice at
different disorders. The solid line is the DOS for a clean
system. The inset shows the DOS at the half filling with the
disorder.
ǫ = 0 and vanishes for ǫ > 4t. Effect of on-site disorder
on the DOS for four system sizes of square lattices is
shown in the Fig. 10. As shown in the inset of Fig 10 the
DOS at half filling decays exponentially with disorder
which is consistent with the Ref. 32.
Following the same procedure as mentioned in the case
of honeycomb lattice, here again we analyze the disorder
dependence of the reduced partition number P/L, NNSD
and DC conductivity for different system sizes but only
in bulk energy regime; the results are shown in Fig. 11,
Fig. 12 and Fig. 13 respectively. As clear from the figures,
the qualitative behavior in this case is same as in the
bulk energy regimes of honeycomb and kagome lattices;
a quantitative difference however shows up in the fitted
line Wx = 5.39 + 106.8/L for P/L, with power n for
fit F (W ) as 3 (instead of 2 as in previous two cases),
with W ∗ = 5.38 + 118.4/L and Wc = 6.5t. The critical
disorders Wx, W ∗ and Wc from the three methods are
given in table III. Wx, W ∗ and Wc for this case show an
inverse linear dependence on the system size.
L
40
50
70
100
Wx
8.0
7.6
6.9
6.5
W ∗
8.3
7.8
7.0
6.6
Wc
7.6
7.0
6.5
TABLE III. Critical disorders calculated from all three meth-
ods for the square lattice at half filling for four system sizes
0.8
0.6
*
8
W
6
0
0.01 0.02 0.03
L-1
k
p
S
0.4
0.2
0
0
9
L = 40
50
70
100
W = 2.0
6.0
6.6
7.0
25.0
0.8
)
S
(
I
0.4
0
0
1
2
S
3
0.1
W -1
0.2
FIG. 12. (Color online) The peak position of the NNSD of
the square lattices of various system sizes. The curves in the
main plot are fitted with: 0.77 tanh((W ∗/W )3). The top left
inset W ∗ are plotted with inverse of the system size which
follows the line: W ∗ = 5.38 + 118.4/L. The bottom right
inset depicts the NNSD at different disorder for the square
lattice of size L = 100.
2
0
-2
-4
-6
s
n
l
ln Wc
0
1
2
ln W
3
(Color online) DC conductivity of the disordered
FIG. 13.
square lattice at the half filling. The upper part is fitted
with:
ln σ = 1.807 − 1.723 ln W and the lower part is fitted
with: ln σ = 5.845 − 3.879 ln W which gives Wc = 6.5t.
9
8
x
W
7
6
5
D. Triangular lattice
0
0.01
0.02
1/L
0.03
In the clean limit, the DOS ρ(ǫ) for a triangular lattice
can exactly be obtained from the band dispersion relation
L = 100
L = 70
L = 50
L = 40
ǫ(k) = −t"2 cos(kx) + 4 cos(cid:18) kx
2 (cid:19) cos √3
2
ky!# , (24)
25
20
15
/
L
P
10
5
0
0
2
4
6
W
8
10
12
FIG. 11. (Color online) The reduced partition number of the
square lattice of different system sizes. The upper part of the
curves are fitted with lines which cut the disorder axis at Wx.
The inset shows the critical disorder Wx with the inverse of
the system size and the fitted line: Wx = 5.39 + 106.8/L.
where k is confined to the first Brillouin Zone31. The
DOS obtained numerically in the clean limit along with
the presence of disorder is shown in the Fig 14. The
analysis indicates a van Hove singularity in the DOS at
energy E = 2t and it approaches zero for ǫ < −6t and
ǫ > 3t. The energy dependence of the DOS for four dis-
orders is shown in the Fig. 14. In the inset of Fig 14, the
disorder dependence of the DOS at a fixed energy (half
W = 0
7.0
9.0
11.0
25.0
12
*
W
9
6
0
0.01 0.02 0.03
L-1
0.8
0.6
k
p
S
0.4
0.2
0.8
)
S
P
(
0.4
10
L = 40
50
70
100
W = 2.0
7.0
9.0
11.0
25.0
)
F
E
0.1
0
10
W
20
0.2
(
r
0.2
e)
(
r
0.1
0
-8
-4
0
e
4
8
FIG. 14. (Color online) The DOS of the triangular lattice in
presence of different disorder strengths. The solid line is the
DOS for the system without any disorder. The inset shows
the variation of DOS at the half filling with disorder.
filled energy) is displayed which indicates an exponential
decrease in DOS with increasing disorder.
The results for the search of critical disorder in tri-
angular lattice by the three methods (same as men-
tioned above for previous lattices) are shown in Fig. 15,
Fig. 16 and Fig. 17 respectively. The figures again in-
dicate the same qualitative behavior as in the bulk en-
ergy regimes of honeycomb, kagom´e and square lattices
but the quantitative difference shows up in the fitted line
Wx = 6.88 + 169.3/L for P/L, with power n for fit F (W )
as 3 (same as in square lattice but different from hon-
eycomb and kagom´e), with W ∗ = 7.10 + 165.8/L and
Wc = 8.7t. A comparison of critical disorders Wx, W ∗
and Wc (for Fermi energy in bulk) from the three meth-
ods is displayed in table IV which confirms, as for previ-
ous three lattice types, an inverse linear dependence for
30
20
/
L
P
10
12
10
x
W
8
6
0
0.01
0.02
1/L
0.03
L = 100
70
50
40
0
0
2
4
6
8
W
10
12
14
FIG. 15.
(Color online) The reduced partition number of
triangular lattice of different system sizes with disorder. The
are the linear fit for the reduced partition number curve which
cut the W axis at Wx. The finite size dependence of the
critical disorder Wx is shown in the inset which follows the
line: Wx = 6.88 + 169.3/L.
0
0
0.04
0.08
W -1
0
0
1
2
S
3
0.12
0.16
FIG. 16.
(Color online) The peak position of the NNSD
with the inverse disorder for the triangular lattice of dif-
ferent system sizes. The data is fitted with the function
0.77 tanh((W ∗/W )2). The top left inset shows the varia-
tion of W ∗ with system size which follows the fitted line:
W ∗ = 7.10 + 165.8/L. The bottom right inset shows the
NNSD of the triangular lattice of system size L = 100 calcu-
lated at the half filling.
Wx, W ∗ and Wc in this case too.
2
0
s
n
l
-2
-4
-6
0
ln Wc
1
2
ln W
3
FIG. 17.
(Color online) DC conductivity of the disordered
triangular lattice at the half filling. The upper part is fitted
with:
ln σ = 2.126 − 1.902 ln W and the lower part is fitted
with: ln σ = 5.812 − 3.606 ln W . The crossing point of these
two fitted curves gives Wc = 8.7.
L
40
50
70
100
Wx
11.1
10.3
9.2
8.6
W ∗
11.2
10.4
9.5
8.7
Wc
10.4
9.4
8.7
TABLE IV. Critical disorders calculated from all three meth-
ods for the triangular lattice at half filling for four system
sizes
V. COMPLEXITY PARAMETER
FORMULATION OF THE TRANSITION
(a)
1
As discussed in previous section, the numerical analy-
sis reveals the qualitative insensitivity of the local fluc-
tuations in physical properties to system parameters
(within a fixed energy range) although a quantitative
dependence is indicated. More clearly, for each lattice
type with Fermi energy in the bulk we observe the fol-
lowing behavior:
(i) the reduced particiapation ratio
has a linear/exponential dependence on the disorder in
weak/strong disorder regime, respectively, (ii) the disor-
der dependence of the peak positions of NNSD can be
described by the function F (w) (with different n values),
(iii) the conductivity has a power law dependence on the
disorder with different exponents in weak and strong dis-
order regime. The observed behavior therefore strongly
suggests the possibility of a common mathematical for-
mulation of the statistical properties where system de-
pendence enters through a single function of all system
parameters. The theoretical steps for such a formulation
are briefly reviewed in section II, with the function re-
ferred as the complexity parameter. As defined in Eq. 11,
(a)
1
0.8
0.6
1
h
0.4
0.2
0
10-4
(b)
1
0.8
0.6
1
h
0.4
0.2
0
0
Honeycomb
Kagome
Square
Triangular
10-3
10-2
10-1
100
L
101
102
103
Honeycomb
Kagome
Square
Triangular
5
10
15
W
20
25
FIG. 18.
(Color online) The variation of η1 with (a) the
rescaled complexity parameter Λ for four different two di-
mensional lattices and (b) the disorder W . As obvious, the
behaviour for different lattices coincide in terms of Λ but not
in terms of disorder.
11
Honeycomb
Kagome
Square
Triangular
10-3
10-2
10-1
100
L
101
102
103
Honeycomb
Kagome
Square
Triangular
5
10
15
W
20
25
0.8
0.6
2
h
0.4
0.2
0
10-4
(b)
1
0.8
0.6
2
h
0.4
0.2
0
0
(Color online) The variation of η2 with (a) the
FIG. 19.
rescaled complexity parameter Λ for four different two di-
mensional lattices and (b) the disorder W . As obvious, the
behaviour for different lattices coincide in terms of Λ but not
in terms of disorder.
the function Y is a combination of various system param-
eters, with explicit dependence on the disorder strength,
hopping and system size. The information about dimen-
sionality and boundary conditions is implicitly contained
in the sparsity of the matrix H as well matrix element
identities and therefore in the summation in Eq. 10. The
necessary rescaling of energy levels for comparison of the
fluctuations however leads to Λ (Eq. 14) as the relevant
transition parameter; the rescaling therefore introduces
the crucial dependence on the dimensionality as well as
on the Fermi energy. The obvious relevance of the theo-
retically obtained single parameter governing the transi-
tion renders its numerical/ experimental verification very
desirable. For this purpose, we consider here three well-
known spectral fluctuation measures namely, the cumula-
tive NNSD η1, η2 and the number variance Σ2(r) (defined
in section III) of the four lattices and analyze their evo-
lution in terms of the complexity parameter Λ instead
of disorder W . The verification in context of the eigen-
function fluctuations is yet to be carried out and will be
reported elsewhere.
To calculate Λ for our analysis, we use the fact that the
localization length ξ is proportional to the average partic-
(a)
10
8
6
)
r
(
2
S
4
2
0
10-4
(b)
10
8
6
)
r
(
2
S
4
2
0
0
Honeycomb
Kagome
Square
Triangular
10-3
10-2
10-1
100
L
101
102
103
Honeycomb
Kagome
Square
Triangular
5
10
15
W
20
25
FIG. 20. (Color online) The number variance Σ2(r) at r = 10
with (a) the rescaled complexity parameter Λ for four different
two dimensional lattices and (b) the disorder W . As obvious,
the behaviour for different lattices coincide in terms of Λ but
not in terms of disorder.
ipation number P . Fig. 18, 19 and 20 show the results for
η1, η2 and Σ2(r), respectively, for four lattices for Fermi
energy at e = 0. As clear from the part (a) of these fig-
ures, Λ-governed evolution of each of these measure for
all four lattices falls almost on the same curve for en-
tire crossover from the localization to delocalization; the
difference of connectivity of the lattices does not affect
their behavior. Note a disorder (W )-dependent evolu-
tion of η1 and η2 for honeycomb and kagome lattices is
expected to differ from that of square and triangular ones
(as suggested by the observed difference in disorder gov-
erned evolution of the NNSD-peaks of the lattices, with
η1 and η2 being cumulative NNSDs); the deviation of the
results for four lattices is clearly visible from part (b) of
Fig. 18, 19 and 20). This clearly reveals Λ as the param-
eter in terms of which the transition in spectral statistics
in Anderson lattices follows a universal route.
VI. DISCUSSION
From our results it is clear that the statistical behav-
ior of two dimensional finite size lattices depends on the
12
coordination number, the lattice connectivity and the
system size. The statistics is different for the lattices
with same coordination number with different connectiv-
ity which is evident from the spectral statistics of the
square lattice and the kagom´e lattice (both having same
coordination number). The spectral averaged density of
states for all the lattices, considered in this paper, show
strong disorder sensitivity in weak disorder regime, and,
at least one van-Hove singularity in clean limit. The po-
sition of the singularity is sensitive to the lattice type; it
occurs at energy ǫ = 0 for the square lattice, at ǫ = 2.0t
for the triangular lattice, at ǫ = ±t for the honeycomb
lattice and at ǫ = 0, −2t for the kagom´e lattice. The den-
sity of states for the honeycomb lattice and the kagom´e
lattice are related to that of the triangular lattice31 and
can be written in terms of the DOS of the triangular
lattice in the clean limit. The DOS at ǫ = ǫF varies
differently for different lattice systems at small disorder
region whereas they all decay exponentially for strong
disorder region. At very large disorder, the DOS for all
the lattice system lead to a Gaussian distribution.
Three methods are used to estimate the critical disor-
der for delocalization to localization transition in two di-
mensional finite size lattices. First, the reduced partition
number (P/L) are used to find the critical disorder Wx.
P/L varies linearly in the weak disorder regime whereas,
it varies exponential in the strong disorder regime. Next,
we study the peak position of the NNSD of each lat-
tice type for four system sizes; which fits with function
0.77 tanh((W ∗/W )α) where α = 3 for the square and
the triangular lattices whereas, α = 2 for the honeycomb
and the kagom´e lattices. Last, the Kubo-Greenwood dc
conductivity is to find the critical disorder (Wc) as the
conductivity follows two power law decay in the weak and
strong disorder regimes. The critical disorders calculated
from all the methods are in agreement with each other.
We also analyze dependence of the critical disorder on
finite size and lattice structure considering four system
sizes for all the cases. Our results indicate (i) a linear
varaition of critcal disorder with 1/L, (ii) it is smallest
for the honeycomb lattice and largest for the triangu-
lar lattice and increases with the coordination number
for a finite lattice of size L. Although the coordination
number is same for the kagom´e lattice and the square lat-
tice the critical disorders are different for the two cases.
Therefore, the critical disorder depends not only on the
coordination number but also on the lattice connectivity.
Finally, we
compare three fluctuation measures
namely, the cumulative NNSD measures η1, η2 and the
number variance Σ2(r) for the four lattices and study
their evolution with the single complexity parameter Λ.
The reults confirm the single parameter dependence of
the localization to delocalization transition in Anderson
Hamiltonian in context of the spectral statistics.
13
VII. ACKNOWLEDGMENTS
M. K. thanks DST for Ramanujan fellowship grant vide
No. SERB/F/3290/2013-2014 and DST Nanomission for
the CRAY computational facility.
15 E. Abrahams, S. V. Kravchenko, and M. P. Sarachik, Rev.
Mod. Phys. 73, 251 (2001).
16 P. M. Ostrovsky,
I. V. Gornyi,
and A. D. Mirlin,
Phys. Rev. Lett. 98, 256801 (2007); S. Ryu, C. Mudry,
H. Obuse, and A. Furusaki, 99, 116601 (2007); K. No-
mura, M. Koshino, and S. Ryu, 99, 146806 (2007); P. San-
Jose, E. Prada,
and D. S. Golubev, Phys. Rev. B 76,
195445 (2007); C. H. Lewenkopf, E. R. Mucciolo, and
A. H. Castro Neto, 77, 081410 (2008).
17 F. Evers and A. D. Mirlin, Rev. Mod. Phys. 80, 1355
(2008).
18 A. D. Mirlin, Phys. Rep. 326, 259 (2000).
19 P. Shukla, J. Phys.: Condens. Matter 17, 1653 (2005).
20 P. Shukla, Phys. Rev. E 71, 026226 (2005).
21 B. I. Shklovskii, B. Shapiro, B. R. Sears, P. Lambrianides,
and H. B. Shore, Phys. Rev. B 47, 11487 (1993).
22 A. Pandey, Chaos, Solitons & Fractals 5, 1275 (1995),
quantum Chaos: Present and Future.
23 R. Berkovits and Y. Avishai, Phys. Rev. Lett. 80, 568
(1998).
24 E. Cuevas, Phys. Rev. Lett. 83, 140 (1999).
25 K. Niizeki, Prog. Theor. Phys. 62, 1 (1979).
26 F. Haake, Quantum Signatures of Chaos, 3rd ed. (Springer,
2010).
27 B. A. McKinnon and T. C. Choy, Aust. J. Phys. 46, 601
∗ dayasindhu.dey@bose.res.in
† manoranjan.kumar@bose.res.in
1 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang,
Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A.
Firsov, Science 306, 666 (2004).
2 A. K. Geim and K. S. Novoselov, Nature Materials 6, 183
(2007).
3 A. K. Geim, Science 324, 1530 (2009).
4 D. Geng, B. Wu, Y. Guo, L. Huang, Y. Xue, J. Chen,
G. Yu, L. Jiang, W. Hu, and Y. Liu, PNAS 109, 7992
(2012); J. H. Bardarson, J. Tworzyd lo, P. W. Brouwer,
and C. W. J. Beenakker, Phys. Rev. Lett. 99, 106801
(2007).
5 C. Gonz´alez-Santander, F. Dom´ınguez-Adame, M. Hilke,
and R. A. Romer, EPL (Europhysics Letters) 104, 17012
(2013).
6 A. Biswas, K.-S. Kim, and Y. H. Jeong, Journal of Applied
Physics 116, 213704 (2014).
7 J. Liao, Y. Ou, X. Feng, S. Yang, C. Lin, W. Yang, K. Wu,
and Y. Li, ArXiv e-prints
K. He, X. Ma, Q.-K. Xue,
(2015), arXiv:1504.01847 [cond-mat.mes-hall].
8 H.-Z. Lu, J. Shi, and S.-Q. Shen, Phys. Rev. Lett. 107,
076801 (2011).
9 P. W. Anderson, Phys. Rev. 109, 1492 (1958).
10 J. T. Edwards and D. J. Thouless, J. Phys. C: Solid State
Phys. 5, 807 (1972).
(1993).
11 E. Abrahams, P. W. Anderson, D. C. Licciardello, and
28 H. Suzuura and T. Ando, Phys. Rev. Lett. 89, 266603
T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979).
12 P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57,
287 (1985).
13 A. MacKinnon and B. Kramer, Phys. Rev. Lett. 47, 1546
(1981); Zeitschrift fur Physik B Condensed Matter 53, 1
(1983); A. MacKinnon, 59, 385 (1985); J. L. Pichard and
G. Sarma, Journal of Physics C: Solid State Physics 14,
L127 (1981); 14, L617 (1981).
14 B. L. Altshuler, A. G. Aronov, and P. A. Lee, Phys. Rev.
Lett. 44, 1288 (1980).
(2002).
29 T. A. Brody, J. Flores, J. B. French, P. A. Mello,
A. Pandey, and S. S. M. Wong, Rev. Mod. Phys. 53, 385
(1981).
30 D. A. Rabson, B. N. Narozhny, and A. J. Millis, Phys.
Rev. B 69, 054403 (2004).
31 T. Hanisch, B. Kleine, A. Ritzl, and E. Muller-Hartmann,
Annalen der Physik 507, 303 (1995), cond-mat/9501116.
32 G. Yu, Y. Yong-Hong, W. Yong-Gang, and Z. Qun, Com-
mun. Theor. Phys. 43, 743 (2005).
|
1711.00079 | 2 | 1711 | 2018-02-27T20:15:47 | Enhanced Superconductivity and Suppression of Charge-density Wave Order in 2H-TaS$_2$ in the Two-dimensional Limit | [
"cond-mat.mes-hall",
"cond-mat.supr-con"
] | As superconductors are thinned down to the 2D limit, their critical temperature $T_c$ typically decreases. Here we report the opposite behavior, a substantial enhancement of $T_c$ with decreasing thickness, in 2D crystalline superconductor 2H-TaS$_2$. Remarkably, in the monolayer limit, $T_c$ increases to 3.4 K compared to 0.8 K in the bulk. Accompanying this trend in superconductivity, we observe suppression of the charge-density wave (CDW) transition with decreasing thickness. To explain these trends, we perform electronic structure calculations showing that a reduction of the CDW amplitude results in a substantial increase of the density of states at the Fermi energy, which contributes to the enhancement of $T_c$. Our results establish ultra-thin 2H-TaS$_2$ as an ideal platform to study the competition between CDW order and superconductivity. | cond-mat.mes-hall | cond-mat | a
Enhanced Superconductivity and Suppression of Charge-density Wave Order
in 2H-TaS2 in the Two-dimensional Limit
Yafang Yang,1 Shiang Fang,2 Valla Fatemi,1 Jonathan Ruhman,1 Efr´en Navarro-Moratalla,3
Kenji Watanabe,4 Takashi Taniguchi,4 Efthimios Kaxiras,2, 5 and Pablo Jarillo-Herrero1, ∗
1Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
3Instituto de Ciencia Molecular, Universidad de Valencia,
c/Catedr´atico Jos´e Beltr´an 2, 46980 Paterna, Spain
4National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
5John A. Paulson School of Engineering and Applied Sciences,
Harvard University, Cambridge, Massachusetts 02138, USA
(Dated: March 1, 2018)
As superconductors are thinned down to the 2D limit, their critical temperature Tc typically
decreases. Here we report the opposite behavior, a substantial enhancement of Tc with decreasing
thickness, in 2D crystalline superconductor 2H-TaS2. Remarkably, in the monolayer limit, Tc in-
creases to 3.4 K compared to 0.8 K in the bulk. Accompanying this trend in superconductivity,
we observe suppression of the charge-density wave (CDW) transition with decreasing thickness. To
explain these trends, we perform electronic structure calculations showing that a reduction of the
CDW amplitude results in a substantial increase of the density of states at the Fermi energy, which
contributes to the enhancement of Tc. Our results establish ultra-thin 2H-TaS2 as an ideal platform
to study the competition between CDW order and superconductivity.
Transition metal dichalcogenides (TMDs) 2H-MX2
(where M = Nb, Ta and X = S, Se) have attracted con-
siderable attention as intriguing 2D crystalline supercon-
ductors [1]. In these materials, superconductivity (SC)
forms in an environment of pre-existing charge-density
wave (CDW) order [2, 3], making it an ideal platform to
study many-body ground states and competing phases in
the 2D limit. In bulk crystals, the reported critical tem-
perature of the CDW transition decreases from 120 K in
2H-TaSe2 down to 30 K in 2H-NbSe2. Superconductivity
weakens in approximately reverse order, with Tc increas-
ing from around 0.2 K in 2H-TaSe2 to 7.2 K in 2H-NbSe2.
The relationship between CDW and superconductivity in
such systems is still under debate [4, 5]. It is generally
believed that such mutual interaction is competitive, but
evidence to the contrary, indicating a cooperative inter-
action, has also been reported in angular-resolved pho-
toemission spectroscopy studies [3].
In TMDs, superconductivity and CDW instability can
be investigated by adjusting the interlayer interactions
through pressure [6, 7] or molecule intercalation [8, 9].
Recently, mechanical exfoliation has emerged as a robust
method for producing ultra-clean, highly crystalline sam-
ples with atomic thickness [10]. This offers a useful way
to assess the effect of dimensionality and interlayer in-
teractions on superconductivity and CDW. A material
whose behavior as a function of layer thickness has been
recently studied is 2H-NbSe2 [11–13], in which the super-
conducting state is progressively weaker in thinner sam-
ples, with Tc reduced from 7 K in bulk crystals to 3 K in
the monolayer. The thickness dependence of CDW order
is still under debate, considering discrepancies between
Raman and scanning tunneling microscopy/spectroscopy
(STM/STS) studies [14, 15].
Bulk 2H-TaS2, another member of the 2H-MX2 family,
exhibits a CDW transition at 70 K and a SC transition at
0.8 K [2, 16–18]. Compared to 2H-NbSe2, 2H-TaS2 mani-
fests a stronger signature of CDW transition in transport
in the form of a sharp decrease of resistivity [9], and thus
serves as a desirable platform to study the thickness de-
pendence of CDW instability. STM/STS measurements
on monolayer TaS2 epitaxially grown on Au(111) sub-
strates show suppression of the CDW instability [19].
Recently, a study observed an enhanced Tc down to a
thickness of 3.5 nm, utilizing TaS2 flakes directly exfoli-
ated on a Si/SiO2 substrate [18]. Unfortunately, it was
found that samples thinner than that become insulating,
indicative of its particular susceptibility to degradation in
ambient atmosphere. Therefore, exfoliation and encap-
sulation in an inert atmosphere become crucial to attain
high quality samples.
Here we report that superconductivity persists in 2H-
TaS2 down to the monolayer limit, with a pronounced
increase in Tc from 0.8 K in bulk crystals to 3.4 K in
the monolayer. Two transport observations, that in the
bulk signal the CDW transition, are found to vanish in
ultra-thin samples: (1) a kink in the temperature depen-
dence of the resistivity, and (2) a change of sign in the
Hall coefficient versus temperature. In search of an ori-
gin for such trends, we perform electronic structure and
phonon spectrum calculations. We show that suppres-
sion of the CDW order leads to a substantial increase in
the density of states at the Fermi level, N (EF ), which
ultimately enhances Tc. Our observations also motivates
consideration of quantum fluctuations of the CDW or-
der as another mechanism that boosts Tc. This provides
2
utilizing a polymer pick-up technique [24] as illustrated
in Fig. 1 (a), taking advantage of the van der Waals ad-
hesion between 2D layers. With this method, we are able
to obtain high quality few-layer TaS2 devices. As seen in
Fig. 1 (b), when temperature is sufficiently low, a clear
superconducting transition is observed for 1, 2, 3, 5, 7-
layer, and bulk samples. By fitting the resistance to the
Aslamazov-Larkin expression [25], we are able to deter-
mine the mean-field superconducting transition tempera-
ture Tc. When sample thickness is decreased from bulk to
monolayer, the corresponding Tc monotonically increases
from 0.9 K to 3.4 K [26]. The trend observed in our ex-
periment is strictly opposite that of a previous finding on
2H-NbSe2 [12], where Tc decreases monotonically with
thickness reduction, despite the fact that the two mate-
rials are isostructural and isovalent.
In 2H-NbSe2, the
decreased Tc is attributed to a weaker interlayer Cooper
pairing given by λinter ∼ cos(π/(N + 1)) as layer number
N is reduced. In our case, however, it is surprising to see
that even with a reduced interlayer Cooper pairing, the
Tc is dramatically enhanced. To verify that the thick-
ness dependence of Tc is independent of extrinsic factors
(such as level of disorder, substrate, source of crystal,
sample quality), we measure an additional set of bilayer
and trilayer samples and plot our results alongside previ-
ously reported Tc values [18] in Fig. 1 (c). Regardless of
different sample preparation procedures and substrates,
the trend of Tc versus thickness is consistent between the
two sets of experimental results, indicative of an intrinsic
origin underlying the enhancement of Tc.
To further characterize the superconducting proper-
ties of thin TaS2, we characterize the superconducting
transition under both out-of-plane and in-plane magnetic
fields. Fig. 1 (d) shows the H⊥
c2 as a function of tempera-
ture. Close to Tc, the dependence of H⊥
c2 is fitted well by
the phenomenological 2D Ginzburg-Landau (GL) model,
which yields ξ(0) = 19, 20, 26 nm for 2, 3, 5-layer re-
spectively, where ξ(0) denotes the GL coherence length
at zero temperature. The reported value for 3D ranges
from 22 nm [27] to 32.6 nm [28]. For in-plane field, we
(cid:107)
c2 = 32 T at 300 mK for a bilayer
observe a much larger H
(Tc = 2.8 K), which is more than six times the Pauli para-
magnetic limit Hp, obeying a square root rather than a
linear temperature dependence (inset of Fig. 1 (d)). This
(cid:107)
c2, often referred to
dramatic enhancement of in-plane H
as Ising superconductivity, has been observed in other 2D
crystalline superconductors [12, 13, 29, 30]. The above
observations verify that thin TaS2 behaves as a 2D super-
conductor. We also show that the superconducting tran-
sition also exhibits the Berezinskii-Kosterlitz-Thouless
(BKT) transition as expected in 2D in the Supplemental
Material [23]. Additionally, the critical current density
increases by orders of magnitude as the devices become
thinner (bulk Jc ≈ 700 A/cm2, trilayer Jc ≈ 7 × 105
A/cm2, bilayer Jc ≈ 1.2 × 106 A/cm2). The trend of
FIG. 1.
(a) Schematic of device fabrication and crystal
structure of 2H-TaS2. (b) Resistance normalized by the nor-
mal state (R/RN ) as a function of temperature for 1, 2,
3, 5, 7-layer and bulk (d = 40 nm) samples near the SC
transition. The superconducting Tc is 3.4, 3.0, 2.5, 2.05,
1.6 and 0.9 K respectively, determined by fitting the tran-
sition curve to the Aslamazov-Larkin formula (black solid
lines). (c) Tc reported in this work (circles) and in a prior
study (crosses) [18]. The dashed line guides the eye to
the general trend.
(d) Out-of-plane critical field Hc2 for
2, 3, 5-layer samples. The dashed lines are linear fits to
c2 = φ0/(2πξ(0)2)(1 − T /Tc), where φ0, ξ(0) denote the
H⊥
flux quantum and in-plane GL coherence length at zero tem-
(cid:107)
perature respectively. Inset: In-plane critical field H
c2 nor-
malized by Pauli limit (Hp ≈ 1.86Tc) for bilayer and bulk
samples. The dashed line for bilayer is a fit to the Tinkham
formula for 2D samples H
[20]. The purple background indicates the Pauli limit regime.
(e) Normalized critical current as a function of T /Tc. Dashed
and dotted lines denote the models proposed by Bardeen [21]
and Ambegaokar-Baratoff [22] respectively.
12φ0/(2πξ(0)d)(cid:112)(1 − T /Tc)
√
(cid:107)
c2 =
new insights into the impact of reduced dimensions on
many-body ground states and their interactions.
In this work, we exfoliate and fabricate samples with a
transfer set-up built inside a glove box filled with Argon
gas, and encapsulate the TaS2 flake between two sheets
of hexagonal boron nitride [23]. We build our devices
00.20.40.60.81T/Tc00.20.40.60.811.2Jc(T)/Jc(0)Bardeen2-layer3-layerAmbegaokar-Baratoffbulk123400.51T/Tc02462-layerbulkHc2ǁ/ Hp00.20.40.60.8T (K)Hc2 (T)(d)(e)2L3L5L = 19 nm = 20 nm = 26 nmT in this work prior work (0.5 R )cN(a)(b)(c)TaSSPDMSPC (cid:31)lmhBN2H-TaSCr/PdAr atmosphere2Si/SiO2012345T (K)00.20.40.60.81R/RN1-layer2-layer3-layer7-layerbulk01235701234Tc (K)10203040Thickness (nm)Layer number, N5-layer critical current density versus temperature for represen-
tative thicknesses is shown in Fig. 1 (e), with a more
detailed discussion in Supplemental Material [23].
In addition to SC transition, bulk 2H-TaS2 is known
to manifest CDW order below 70 K. Fig. 2 (a) illustrates
the atomic displacements in the CDW state for mono-
layer. Two well established indicators of the CDW phase
in bulk TaS2 are a kink in the resistivity occurring at
TCDW = 70 K and a change of sign in the Hall coeffi-
cient as the temperature is reduced below TCDW . We
find that both disappear as the sample thickness is re-
duced towards the 2D limit. Shown in Fig. 2 (b) is a plot
of normalized resistance versus temperature on a linear
scale. All samples manifest a linear decrease of resistance
at high temperatures, consistent with phonon limited re-
sistivity in a normal metal [31]. Below 70 K, the 7-layer
and bulk devices undergo a CDW phase transition, pro-
ducing a sudden drop in resistance. This is confirmed by
calculating the temperature derivative of the resistivity,
as shown in the inset of Fig. 2 (b). A peak in dρ/dT de-
velops close to the transition. In 2, 3, 5-layer, however,
such a sudden drop is not noticeable.
The Hall effect has been used to verify the existence
of a phase transition. The Hall coefficient is found to
demonstrate a broad transition between 70 and 20 K
and a change in sign at 56 K in bulk crystals [8]. This
indicates that the CDW transition not only induces a
structural change, but also alters the electronic proper-
ties of the material. It has been shown that a two-carrier
model with light holes and heavy electrons is necessary to
explain the opposite signs for the Seebeck and Hall coeffi-
cients measured above the CDW transition temperature;
a single-carrier model describes the low-temperature be-
havior [8]. In Fig. 2 (c), we plot the Hall coefficient of
three representative thicknesses below 100 K. In the 5-
layer device, a significant deviation from the bulk behav-
ior is already apparent: the overall magnitude of RH and
temperature where it switches sign, are both diminished.
However, the most striking fact is the weak temperature
dependence and absence of a sign change in the 2-layer
sample. This provides unambiguous evidence that the
CDW transition occurring in bulk samples is absent in
the ultra-thin limit.
Another interesting observation is the emergence of
R ∼ T 2 behavior in ultra-thin samples.
In Fig. 2 (d),
we plot the subtracted resistance R − RN on a log-log
scale. For bulk, the linear temperature dependence is
disrupted by a sudden switch to T 5 near TCDW . R ∼ T 5
has been well known as a consequence of electron-phonon
scattering at temperatures lower than the Debye temper-
ature ΘD. In contrast, a gradual transition to R ∼ T 2
is observed in 2, 3-layer; it persist from 55 K down to
the onset temperature of superconductivity. Naively,
such T 2 behavior results from electron-electron scatter-
ing within Fermi liquid theory. However, we find that
the observed T 2 coefficient is too large to be explained
3
FIG. 2.
(a) Illustration of the atom position of Ta and S
atoms in the normal phase and the CDW phase. The pe-
riodicity of the CDW order is 3 × 3. (b) Normalized resis-
tance R(T )/R(250K) for 2, 3, 5, 7-layer and bulk samples,
measured while cooling down.
Inset: derivative of the re-
sistivity ρ = d · R close to the CDW ordering temperature.
An arrow is used to mark the TCDW for bulk and 7-layer,
which both show a peak in dρ/dT at 70 K. (c) Hall coeffi-
cient RH = d· VH /(I · B) measured while cooling down. Data
for the bulk crystal is from [8]. (d) Resistance R − RN as a
function of temperature plotted in a log-log scale, where RN
is the residual resistance just above the onset temperature of
superconductivity. For clarity, data for 5-layer is scaled by a
factor of 0.8.
within such a framework. Moreover, assuming the e-e
scattering strength is not greatly altered from 3D to 2D
[23], it is implausible that the T 2 behavior is completely
absent in thick samples in the same temperature range.
Here we propose an alternative mechanism that leads to
a T 2 resistivity: scattering of electrons by soft phonons,
i.e. critical CDW fluctuations, which can happen close
to a finite momentum ordering transition [32] (see Sup-
plemental Material [23]). This picture is motivated by
the longitudinal and Hall resistivity data indicating the
disappearance of the CDW order in thin samples. It as-
sumes that although the long range CDW order has been
destroyed, strong CDW fluctuations remain, which can
scatter electrons.
It is worth noting that a similar anti-correlation of
trends of SC and CDW transition has also been observed
in 2H-TaS2 crystals under pressure [6, 28] and single crys-
tal alloys [33–35]. To better understand the connection
between CDW and superconductivity, we recall that in
McMillan's theory, the critical temperature is expressed
(b)(a)(c)(d)1050100200T (K)10-1100101102R-R (Ω)T5T2T1T1T2N2-layer3-layer5-layer×0.87-layerbulkT CDWT (K)RH (10 cm3C-1)5-layer-4bulk, ref [8]2-layer20406080100-5-4-3-2-10123050100150200250T (K)R(T)/R(250 K)2-layer3-layer5-layer7-layerbulk00.20.40.60.811.250100T (K)020dρ/dT (Ω‧nm/K)70 K 40TaTa (CDW)SS (CDW) as [36]
Tc =
ΘD
1.45
exp[− 1.04(1 + λ)
λ − µ∗(1 + 0.62λ)
],
(1)
where µ∗ is the Coulomb pseudopotential of Morel and
Anderson, and λ is the electron-phonon coupling con-
stant. Assuming µ∗ = 0.15 as suggested by McMillan
[36], one can evaluate the inverted form of Eq. (1) and
obtain λ = 0.482 for TaS2 with ΘD = 250 K [37] and
Tc = 0.8 K [18], indicating that TaS2 lies in the interme-
diate coupling regime.
The CDW instability allows electronic systems to lower
their energy by inducing energy gaps in the spectrum.
Since N (EF ) can affect both µ∗ and λ, it plays an impor-
tant role in determining Tc. We investigate the electronic
and vibrational properties of 2H-TaS2 based on density
functional theory (DFT). First, we implemented in VASP
code [38, 39] in order to obtain the DOS in the normal
and the CDW phases for monolayer, bilayer and bulk.
A comparison of Fig. 3 (b) and (c) reveals an apprecia-
ble reduction of DOS near the Fermi level induced by
CDW order for all three thicknesses. This is consistent
with previous magnetic susceptibility and heat capacity
experiments showing a sharp drop of density of states
below the CDW transition [40, 41]. Further, to visualize
the effects of CDW on the pristine band structure, we
derive the unfolded band structure in the CDW phase,
shown in Fig. 3 (a), based on the Fourier decomposi-
tions of the Bloch wavefunctions from the tight-binding
Hamiltonians [42, 43] (see Supplemental Material [23]).
It is clearly seen that a band gap, ∆CDW , emerges in
the inner pocket around K along Γ-K and K-M. In ad-
dition, the saddle point located along the Γ-K, is shifted
to energies above the Fermi level. Next, we compute the
phonon dispersion for the bulk and monolayer (see Sup-
plemental Material [23]).
In both the bulk and mono-
layer, an acoustic mode that involves in-plane motion of
Ta atoms softens and becomes unstable as the electronic
temperature is lowered. We found that in both cases the
instability occurs at approximately the same wave vector
that corresponds to the CDW ordering QCDW ≈ 2/3 ΓM
[44].
We then investigate the impact of progressive weaken-
ing of the CDW with decreasing thickness by varying the
magnitude of atomic distortion. A scaling factor, from 1
to 0, is used to define the fraction by which the magni-
tude of the atomic displacement is reduced with respect
to the stable distorted configuration. The correspond-
ing DOS as a function of atom displacement amplitude
is calculated and plotted in Fig. 3 (d). Using the bulk
as a starting point, we take into account the change in
N (EF ) and a small phonon energy shift calculated for
monolayer, and plot the predicted Tc within the McMil-
lan formalism in Fig. 3 (e). An enhancement of Tc up
to 3.75 K is achieved when the amplitude of CDW goes
to zero. This gives a rough estimate of the impact of
4
FIG. 3. (a) Band structure for monolayer 2H-TaS2. The grey
lines show the unfolded band structure compared with origi-
nal band structure in the normal phase (red lines). (b) Den-
sity of states for monolayer/bilayer/bulk in the normal phase.
Monolayer in the CDW phase is plotted as a grey shade for
reference. (c) Density of states for monolayer/bilayer/bulk in
the CDW phase. Monolayer in the normal phase is plotted
as a grey shade for reference. (d) A comparison of density of
states close to Fermi level for monolayer with various CDW
amplitudes ranging from 1 (full amplitude) to 0 (total sup-
pression). (e) Left axis: density of states at Fermi level N (EF )
as a function of CDW amplitude for monolayer. Right axis:
Tc from Eq. (1) using calculated N (EF ).
the suppression of the CDW order on the superconduct-
ing Tc, which leads to a reasonable prediction that aligns
with the experimental value. We note that it is not en-
tirely clear that the enhancement of Tc is solely due to the
enhanced DOS. There are several factors impacting Tc
that have been discussed previously but not addressed in
our calculation, such as substrate effects, the presence of
a van Hove singularity near the Fermi level and enhanced
electron-phonon coupling due to reduced screening in two
dimensions [18], and a weaker interlayer Cooper pairing
[12].
This is not the first experiment indicating that a
CDW phase transition vanishes in reduced dimensions
[8, 19, 45–47].
Its origin is still under debate [5, 45].
Recently, a study showed that lattice fluctuations aris-
ing from the strong electron-phonon coupling act to sup-
press the onset temperature of CDW order, leading to a
pseudogap phase characterized by local order and strong
phase fluctuations [48]. This is consistent with our model
of presence of soft phonons, or CDW fluctuations [49]
as primary contributor to the T 2 behavior of resistivity
observed above TCDW . More interestingly, theory pre-
dicts that quantum fluctuations caused by proximity to
a CDW transition can boost superconducting pairing by
providing sources of bosonic excitations [50]. Although
there is no direct evidence that CDW fluctuations facili-
tate superconductivity in 2H-TaS2, this scenario reveals
a potentially rich relationship between CDW and SC.
In conclusion, we observe enhanced superconductivity
in atomically thin 2H-TaS2 accompanied with suppres-
sion of the CDW order. Our electronic band structure
calculation shows that suppression of the CDW phase
leads to a substantial increase in N (EF ), which acts
to boost the superconducting Tc. We further suggest
that the emergence of R ∼ T 2 behavior in ultra-thin
samples is attributable to the scattering of electrons
with soft phonon modes,
indicative of critical CDW
fluctuations. Future studies of the layer dependence of
the CDW order, for example, STM/STS and ultrafast
spectroscopy studies, will be essential to understanding
both the origin of the CDW and the relationship between
CDW and superconductivity.
We thank Yuan Cao, Jason Luo and Jiarui Li for ex-
perimental help. We also thank Patrick A. Lee, Dennis
Huang, Miguel A. Cazalilla and Bertrand I. Halperin for
fruitful discussions. This work has been primarily sup-
ported by the US DOE, BES Office, Division of Materi-
als Sciences and Engineering under Award de-sc0001819
(YY and PJH) and by the Gordon and Betty Moore
Foundations EPiQS Initiative through Grant GBMF4541
to PJH Fabrication work (ENM) and theory analysis
were partly supported by the NSF-STC Center for In-
tegrated Quantum Materials under award No. DMR-
1231319 (VF, SF) and ARO MURI Award W911NF-14-
0247 (EK). This work made use of the MRSEC Shared
Experimental Facilities supported by NSF under award
No. DMR-0819762 and of Harvards CNS, supported by
NSF under Grant ECS-0335765. SF used Odyssey clus-
ter of the FAS by the Research Computing Group at
Harvard University, and the Extreme Science and Engi-
neering Discovery Environment, which is supported by
NSF Grant No. ACI-1053575. JR acknowledges the
Gordon and Betty Moore Foundation under the EPiQS
initiative under Grant No. GBMF4303. A portion of
this work was performed at the National High Mag-
netic Field Laboratory, which is supported by NSF Co-
operative Agreement No. DMR-1157490 and the State
of Florida. Growth of hexagonal boron nitride crystals
was supported by the Elemental Strategy Initiative con-
ducted by the MEXT, Japan and JSPS KAKENHI Grant
Numbers JP15K21722 and JP25106006.
5
∗ pjarillo@mit.edu
[1] Y. Saito, T. Nojima, and Y. Iwasa, Nat. Rev. Mater. 2
(2016).
[2] A. C. Neto, Phys. Rev. Lett. 86, 4382 (2001).
[3] T. Kiss, T. Yokoya, A. Chainani, S. Shin, T. Hanaguri,
M. Nohara, and H. Takagi, Nat. Phys. 3, 720 (2007).
[4] M. Calandra, I. Mazin, and F. Mauri, Phys. Rev. B 80,
241108 (2009).
[5] Y. Ge and A. Y. Liu, Phys. Rev. B 86, 104101 (2012).
[6] D. Freitas, P. Rodiere, M. Osorio, E. Navarro-Moratalla,
N. Nemes, V. Tissen, L. Cario, E. Coronado, M. Garc´ıa-
Hern´andez, S. Vieira, et al., Phys. Rev. B 93, 184512
(2016).
[7] C. Chu, V. Diatschenko, C. Huang,
and F. DiSalvo,
Phys. Rev. B 15, 1340 (1977).
[8] A. Thompson, F. Gamble, and R. Koehler Jr, Phys. Rev.
B 5, 2811 (1972).
[9] J. A. Wilson, F. Di Salvo, and S. Mahajan, Adv. in Phys.
24, 117 (1975).
[10] A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183
(2007).
[11] Y. Cao, A. Mishchenko, G. Yu, E. Khestanova,
A. Rooney, E. Prestat, A. Kretinin, P. Blake, M. Shalom,
C. Woods, et al., Nano Lett. 15, 4914 (2015).
[12] X. Xi, Z. Wang, W. Zhao, J.-H. Park, K. T. Law,
H. Berger, L. Forr´o, J. Shan, and K. F. Mak, Nat. Phys.
12, 139 (2016).
[13] A. W. Tsen, B. Hunt, Y. D. Kim, Z. J. Yuan, S. Jia,
R. J. Cava, J. Hone, P. Kim, C. R. Dean, and A. N.
Pasupathy, Nat. Phys. 12, 208 (2016).
[14] X. Xi, L. Zhao, Z. Wang, H. Berger, L. Forr´o, J. Shan,
and K. F. Mak, Nat. Nanotechnol. 10, 765 (2015).
[15] M. M. Ugeda, A. J. Bradley, Y. Zhang, S. Onishi,
Y. Chen, W. Ruan, C. Ojeda-Aristizabal, H. Ryu, M. T.
Edmonds, H.-Z. Tsai, et al., Nat. Phys. 12, 92 (2016).
[16] S. Nagata, T. Aochi, T. Abe, S. Ebisu, T. Hagino,
Y. Seki, and K. Tsutsumi, J. Phys. Chem. Solids 53,
1259 (1992).
[17] I. Guillam´on, H. Suderow, J. G. Rodrigo, S. Vieira,
P. Rodi`ere, L. Cario, E. Navarro-Moratalla, C. Mart´ı-
Gastaldo, and E. Coronado, New J. Phys. 13, 103020
(2011).
[18] E. Navarro-Moratalla,
J. O.
Island,
S. Manas-
Valero, E. Pinilla-Cienfuegos, A. Castellanos-Gomez,
J. Quereda, G. Rubio-Bollinger, L. Chirolli, J. A. Silva-
Guill´en, N. Agraıt, G. A. Steele, F. Guinea, H. S. J.
van der Zant, and E. Coronado, Nat. Commun. 7, 11043
(2016).
[19] C. E. Sanders, M. Dendzik, A. S. Ngankeu, A. Eich,
A. Bruix, M. Bianchi, J. A. Miwa, B. Hammer, A. A.
Khajetoorians,
and P. Hofmann, Phys. Rev. B 94,
081404 (2016).
[20] M. Tinkham, Introduction to superconductivity (Dover,
New York, 2004).
[21] J. Bardeen, Rev. Mod. Phys. 34, 667 (1962).
[22] V. Ambegaokar and A. Baratoff, Phys. Rev. Lett. 10,
486 (1963).
[23] See Supplemental Material for further details.
[24] J. I.-J. Wang, Y. Yang, Y.-A. Chen, K. Watanabe,
T. Taniguchi, H. O. Churchill, and P. Jarillo-Herrero,
Nano Lett. 15, 1898 (2015).
6
[25] L. Aslamasov and A. Larkin, Phys. Lett. A 26, 238
Quant. Mater. 2, 11 (2017).
(1968).
[26] For the monolayer flake, determination of Tc becomes
tricky due to electrical shortage to adjacent flakes with
different thickness. Detailed analysis and determination
of Tc by critical current mapping can be found in Sup-
plemental Material [23].
[36] W. McMillan, Phys. Rev. 167, 331 (1968).
[37] A. Schlicht, M. Schwenker, W. Biberacher, and A. Lerf,
J. Phys. Chem. B 105, 4867 (2001).
[38] G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169
(1996).
[39] G. Kresse and J. Furthmuller, Comput. Mater. Sci. 6, 15
[27] Y. Kashihara, A. Nishida, and H. Yoshioka, J. Phys.
(1996).
Soc. Jpn. 46, 1112 (1979).
[28] M. Abdel-Hafiez, X.-M. Zhao, A. Kordyuk, Y.-W. Fang,
B. Pan, Z. He, C.-G. Duan, J. Zhao, and X.-J. Chen,
Sci. Rep. 6 (2016).
[29] J. Lu, O. Zheliuk, I. Leermakers, N. F. Yuan, U. Zeitler,
[40] F. Di Salvo, R. Schwall, T. Geballe, F. Gamble, and
J. Osiecki, Phys. Rev. Lett. 27, 310 (1971).
[41] L. Mattheiss, Phys. Rev. B 8, 3719 (1973).
[42] M. Farjam, arXiv:1504.04937 (2015).
[43] V. Popescu and A. Zunger, Phys. Rev. B 85, 085201
K. T. Law, and J. Ye, Science 350, 1353 (2015).
(2012).
[30] Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama,
J. Ye, Y. Kasahara, Y. Nakagawa, M. Onga, M. Toku-
naga, T. Nojima, et al., Nat. Phys. 12, 144 (2016).
[31] M. S. El-Bana, D. Wolverson, S. Russo, G. Balakrishnan,
D. M. Paul, and S. J. Bending, Supercond. Sci. Technol.
26, 125020 (2013).
[32] R. Hlubina and T. Rice, Phys. Rev. B 51, 9253 (1995).
[33] K. E. Wagner, E. Morosan, Y. S. Hor, J. Tao, Y. Zhu,
T. Sanders, T. M. McQueen, H. W. Zandbergen, A. J.
Williams, D. V. West, and R. J. Cava, Phys. Rev. B 78,
104520 (2008).
[34] L. Fang, P. Y. Zou, Y. Wang, L. Tang, Z. Xu, H. Chen,
C. Dong, L. Shan, and H. H. Wen, Sci. Technol. Adv.
Mater. 6, 736 (2016).
[44] O. R. Albertini, A. Y. Liu, and M. Calandra, Phys. Rev.
B 95, 235121 (2017).
[45] A. Ayari, E. Cobas, O. Ogundadegbe, and M. S. Fuhrer,
J. Appl. Phys. 101, 014507 (2007).
[46] J. Pan, C. Guo, C. Song, X. Lai, H. Li, W. Zhao,
H. Zhang, G. Mu, K. Bu, T. Lin, X. Xie, M. Chen, and
F. Huang, J. Am. Chem. Soc. 139, 4623 (2017).
[47] M. Yoshida, R. Suzuki, Y. Zhang, M. Nakano,
and
Y. Iwasa, Sci. Adv. 1, e1500606 (2015).
[48] F. Flicker and J. van Wezel, Phys. Rev. B 94, 235135
(2016).
[49] M. Naito and S. Tanaka, J. Phys. Soc. Jpn. 51, 219
(1982).
[50] Y. Wang and A. V. Chubukov, Phys. Rev. B 92, 125108
[35] L. Li, X. Deng, Z. Wang, Y. Liu, and M. Abeykoon, npj
(2015).
|
1212.3401 | 1 | 1212 | 2012-12-14T06:55:55 | 1.5 GHz Pulse Generation From a Monolithic Waveguide Laser With a Graphene-Film Saturable Output Coupler | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"physics.optics"
] | We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at 1039nm, with 1.5GHz repetition rate at an average 202mW output power. This performance is due to the combination of the graphene saturable absorber with the high quality laser glass. | cond-mat.mes-hall | cond-mat |
1.5 GHz Pulse Generation From a Monolithic Waveguide Laser With a
Graphene-Film Saturable Output Coupler
R. Mary1, S.J. Beecher1, G. Brown1, F. Torrisi2, S. Milana2, D.Popa2,
T. Hasan2, Z. Sun2, E. Lidorikis3, S. Ohara4, A.C. Ferrari2 and A.K. Kar1
1SUPA, Institute of Photonics and Quantum Sciences,
School of Engineering and Physical Sciences,
Heriot-Watt University, EH14 4AS, UK
2Department of Engineering,
University of Cambridge, Cambridge, CB3 0FA, UK
3Department of Materials Science and Engineering,
University of Ioannina, Ioannina, Greece
4Asahi Glass Co., Ltd. Research Center,
1150, Hazawa-cho, Kanagawa-ku,
Yokohama, Kanagawa 221-8755, Japan
We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror.
This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveg-
uide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion
efficiencies. The laser produces mode-locked pulses at∼1039nm, with 1.5GHz repetition rate at
an average 202mW output power. This performance is due to the combination of the graphene
saturable absorber with the high quality laser glass.
Carbon nanotubes (CNTs) and graphene have emerged
as promising saturable absorbers (SA) for a variety of
applications1–3, opening a new phase in the development
of passively Q-switched4 and mode-locked lasers5–15.
While the predominantly used semiconductor saturable
absorber mirrors (SESAMs) are limited by their narrow
wavelength range17, and complex fabrication18, CNTs
and graphene have simple, cost-effective production and
integration1–16. Broadband operation is achieved with
CNTs by combining tubes of different diameters12. How-
ever, for a particular wavelength, only CNTs in reso-
nance are used, the rest contributing insertion losses6.
Graphene has an inherent ultra-wide spectral range due
to the linear dispersion of the Dirac electrons1–4,6,7. This,
along with the ultrafast recovery time19 and low satura-
tion fluence6,11, makes it an excellent SA1,6–8,10,11.
Saturable absorption can also lead to a regime of Q-
switched mode-locking (QML)20, where the laser out-
put consists of mode-locked pulses within a Q-switched
envelope20. This arises due to Q-switching instabilities
in the cavity20, typically due to long (i.e.>1µs) upper
state lifetimes of the gain media in solid state lasers20.
These lasers are useful for applications where the pulse
energy stored within the Q-switched envelope20 is valu-
able, such as nonlinear frequency conversion21, medical
applications22, and micromachining23. With the emerg-
ing trend in miniaturization of optical devices based on
on-chip integration, the development of ultrafast lasers
requires a complementary balance between device com-
pactness and performance13,14. Ultra-compact high repe-
tition rate (>1GHz) lasers are very useful for applications
such as nonlinear microscopy24, frequency combs25 and
spectroscopy26. The ease of SA integration into a com-
pact cavity plays an important role13,14. Lasers employ-
ing a waveguide cavity allow device compactness, mean-
while emulating the advantages of fiber lasers, such as
high beam quality17 and efficient heat dissipation13,14,17.
Of the numerous methods for waveguide fabrication, a
simple yet reliable technology is ultrafast laser inscription
(ULI)27, which utilizes∼100fs focused pulses to induce
permanent modifications within a substrate27. Mode-
locked ULI waveguide lasers have been demonstrated us-
ing CNT-SAs13,14. However, the fiber ring cavity13,14 did
not allow its miniaturization, thus high pulse rates.
Here we report pulse generation in a compact, ULI in-
scribed waveguide laser in Ytterbium-doped Bismuthate
Glass (Yb:BG), by using a graphene film (GF) trans-
ferred to an output coupler (OC) mirror as a SA. We
get mode-locked pulses with 1.5GHz repetition rate and
202mW average output power, with a 48% slope effi-
ciency (i.e. rate of output to pump power in excess of
the lasing threshold28) and 38% optical-to-optical con-
version efficiency (i.e. rate of output to pump power28).
The slope efficiency is high compared with that typical
of monolithic pulsed waveguide lasers (e.g. 27%)29.
A variety of approaches have been used to make
graphene-based SAs. For example, graphene-polymer
composites, fabricated from dispersions produced by liq-
uid phase exfoliation (LPE) of graphite16, have been
used to mode-lock fiber lasers at 1.51,7,11 and 2µm8.
Films grown by chemical vapour deposition (CVD) with
1 layer15, 1-2 layers9, and non-uniform multi-layers10,
have been used to mode-lock solid-state lasers at 2µm9,15
and fiber lasers at 1µm10. Ref.30 used flakes produced
by micromechanical cleavage of graphite, with 4-40 lay-
ers, for mode-locking of fiber lasers at 1.5µm. LPE
graphene-polymer composites4, and flakes (10-40 layers)
grown by carbon segregation on SiC31, have been used
for Q-switching of fiber lasers at 1.5µm and solid-state
lasers at 1µm, respectively. Graphene oxide (GO) was
D
100
)
.
u
.
a
(
y
t
i
s
n
e
t
n
I
(a)
(b)
G
2D
D'
LPE graphene dispersion
D+D'
2D'
LPE graphene film
)
%
(
e
c
n
a
t
t
i
m
s
n
a
r
T
80
60
40
20
(a)
(b)
(c)
(d)
2
Quartz
Graphene dispersion
Graphene film
Graphene film on quartz
1500
2500
2000
Raman shift (cm-1)
3000
0
200
400
600
Wavelength (nm)
800
1000
1200
FIG. 1. Raman spectra measured at 514nm of (a) graphene
dispersion in SDC-Water and (b) graphene film.
FIG. 2. Transmittance of (a) quartz, (b) graphene dispersion,
(c) graphene-film; (d) graphene-film on quartz.
also used as SA, either as a film in solid-state lasers at
2µm32, or as composite in fiber lasers at 1.5µm2. How-
ever, GO is an insulating material with many defects and
gap states33, and may not offer the wideband tunability
of graphene. Carbon segregation and CVD require high
substrate temperatures9,15,16,32, followed by transfer to
the target substrate9,10,15. Micromechanically cleaved
graphene has high structural and electronic quality2, but
is limited in terms of yield, thus impractical for large-
scale applications16. LPE has the advantage of scala-
bility, room temperature processing and high yield, and
does not require any growth substrate16. Dispersions
produced by LPE can easily be embedded into polymers
composites and integrated into various systems2,16.
Here we adopt a novel approach and use LPE graphene
in a polymer-free film. This makes it suitable for high-
power applications and device miniaturization. The
GF-SA is prepared as follows. Graphite flakes (Sigma
Aldrich) undergo LPE34 and are dispersed in deionised
water with sodium deoxycholate, as for Refs.6 and
8. High Resolution Transmission Electron Microscopy
(HRTEM), optical and Raman Spectroscopy are then
used to characterize the dispersions. HRTEM shows that
the sample consists of∼26% single-,∼22% bi- and∼18%
tri-layers8,35, with∼1µm average size. The dispersion
then undergoes vacuum filtration via 25nm pore-size fil-
ters. This blocks the flakes, while allowing water to pass
through, resulting in a GF. This is then placed on an OC
mirror, to be used in the laser, and on a quartz plate, for
optical characterization, by applying pressure and heat
(∼80◦C, to improve adhesion) for two hours, followed by
dissolution of the filter in acetone. The film is∼45nm
thick, as determined by profilometry. The GF density
is∼0.72g/cm3, derived by measuring with a microbalance
the filter weight before and after the GF deposition. This
is∼3 times smaller than the density of bulk graphite.
Raman spectra are acquired at 457, 514, 633nm using
a Renishaw InVia micro-Raman spectrometer. Fig.1(a)
plots a typical Raman spectrum of graphene flakes in
the dispersion. Besides the G and 2D peaks, signifi-
cant D and D' bands are also present36,37. We assign
the D and D' peaks to the sub-micrometer edges of our
flakes38, rather than to a large amount of disorder within
the flakes. This is supported by the G peak dispersion,
Disp(G)=0.02cm−1/nm, much lower than in disordered
carbons39. Fig.1(b) plots the GF Raman spectrum at
514nm. Similar to the individual flakes discussed above,
Disp(G) is 0.02 cm−1/nm39. The 2D peak is still single
Lorentzian, but∼24cm−1 larger than for the individual
flakes. Thus, even if the flakes are multi-layers, they are
electronically decoupled and, to a first approximation,
behave as a collection of single layers35,40. The ratio
of the 2D and G integrated areas, A(2D)/A(G), is at
most∼2, thus we estimate a doping∼1.3x1013cm−2 [42],
i.e. a Fermi level shift∼4-500meV41,42.
Fig.2(b) plots the transmittance of the graphene dis-
persion (diluted to 10% to avoid scattering losses at
higher concentrations). Using T = e−αlc where l[m] is
the light path length, c[gL−1] is the concentration of
dispersed graphitic material, and α[Lg−1m−1] is the ab-
sorption coefficient, with α ∼1390Lg−1m−1 at 660nm43,
we derive c∼0.18gL−1. The peak∼266nm is a signa-
ture of the van Hove singularity in the graphene den-
sity of states44. Fig.2(a,c,d) plot the transmittance of
quartz, pure GF and GF on quartz. The transmit-
tance and reflectance at 1039nm (the laser wavelength)
are∼59% and∼11% respectively. To estimate the num-
ber of graphene layers from these measurements we use
the recurrent matrix method, including the correction to
the graphene optical conductivity induced by doping45.
While pristine graphene absorbs 2.3% per layer, dop-
ing, and consequent Pauli blocking, can significantly de-
crease this6,46. By comparing our calculations with the
data at 1039nm we estimate that our GF consists of∼40
3
FIG. 5. Mode-locked pulse train.
flections. Two identical lenses with a 6.2nm focal length
couple the pump light efficiently into the waveguide,
and a half-wave plate varies the pump polarization. A
dichroic mirror with 99% reflection from 1010-1200nm
and <2% at the pump is the pump mirror. The mirrors
are butt-coupled to either waveguide end using an index
matching gel, which also reduces the parasitic Fresnel re-
flections at the interfaces49. A dichroic mirror separates
the QML output from the residual pump light.
The laser operation initiates abruptly at a threshold
pump power of 100mW in a self-starting QML regime.
The cavity is optimized by adjusting the pump coupling
efficiency, pump beam polarization, and GF-SA posi-
tion. The mode area on the GF-SA is dictated by that
of the waveguide. Using a fast photodiode and a wide-
bandwidth oscilloscope, the initial QML repetition rate is
measured as 200kHz, with 17mW average output power.
Mode-locked pulses at a fundamental repetition rate of
1.514GHz, corresponding to the free spectral range of
the cavity, are measured within the Q-switched envelope.
Fig.4 shows the QML pulse repetition rate and energy
evolution within a single Q-switched envelope. As the
launch pump power is increased, the period between the
Q-switched pulses reduces, indicating a tendency towards
CW mode-locking. At the highest available pump power
of 530mW, the Q-switching modulation has a frequency
of 0.95MHz, and an average output power of 202mW,
corresponding to a pulse energy of 220nJ. This is dis-
tributed along the mode-locked pulses existing within
the Q-switch envelope. Fig.5 shows a constant mode-
locked pulse train behaviour measured on a timescale
of 500ps/div. Mode-locking at the fundamental repeti-
tion rate is also verified by measuring the rf spectra with
a Rigol 1030 spectrum analyzer (Fig.6). The∼4.2MHz
spectral width indicates no pure CW mode-locking50, as
further shown in the inset of Fig.5.
The optical spectrum is given in Fig.7. The spectral
bandwidth, corresponding to a pump power of 530mW,
FIG. 3. Laser schematic. L1 and L2: coupling lenses; PM:
polarization maintaining fiber; GSA: Graphene saturable ab-
sorber; OC: output coupler; DM: Dichroic mirror.
QML Repetition Rate
Pulse Energy
1.0
0.8
0.6
0.4
0.2
240
200
160
120
80
)
z
H
M
(
e
t
a
R
n
o
i
t
i
t
e
p
e
R
L
M
Q
l
P
u
s
e
E
n
e
r
g
y
(
n
J
)
190
285
380
475
570
Input Power (mW)
FIG. 4. Repetition rate, and pulse energy within a single
Q-switched envelope as a function of input pump power.
layers. Taking into account that its density is∼1/3 of
graphite, this number of layers correspond to an overall
thickness∼40nm, in good agreement with that measured
by profilometry. We note that a 40nm thick undoped and
compact GF would absorb 100% of the incident light and
be near impossible to saturate, thus the low density and
doping of our film are essential for the SA to work.
Fig.3 is the schematic of our cavity. We use a 50mm
Yb:BG substrate with 1.6x1026m−3Yb3+ dopants and
2.03 refractive index as gain medium. The waveguide
is inscribed by focusing the pulses, through a 0.4NA
lens, 200µm below the substrate surface, by a master
oscillator power amplifier fiber laser (IMRA FCPA µ-
Jewel D400) delivering 350fs pulses at 1047nm and 1MHz
repetition rate. An automated x-y-z stage translates
the sample, thus extending the positive index change
at the laser focus to form a waveguide. Low inser-
tion loss waveguides with symmetric cross-sections are
realised using a multi-scan technique47, inscribed with
pulse energies∼50nJ. Previously, highly efficient contin-
uous wave lasing was demonstrated from these, with top
slope efficiency∼79%48.
The pump source is a polarisation-maintaining fiber-
coupled diode laser at 976nm, with 530mW maximum
pump power, and an angle cleaved fiber to avoid back re-
)
m
B
d
(
y
t
i
s
n
e
t
n
I
-20
-30
-40
-50
-60
-70
-80
1.5138 GHz
)
m
B
d
(
y
t
i
s
n
e
t
n
I
-40
-50
-60
-70
-80
-90
1.510
Frequency (GHz)
1.515
1.520
1.48
1.50
1.52
1.54
1.56
Freguency (GHz)
.
)
.
u
a
(
y
t
i
s
n
e
n
t
I
FIG. 6. RF Spectrum measured at the maximum pump.
1.0
0.8
0.6
0.4
0.2
0.0
1038.0
1038.5
1039.0
1039.5
Wavelength (nm)
1040.0
1040.5
FIG. 7. Optical Spectrum.
200
)
W
m
150
(
r
e
w
o
P
t
u
p
100
t
u
O
e
g
a
r
e
v
A
50
0
0
100
300
200
Input Power (mW)
400
4
500
FIG. 8. Output power. Slope efficiency∼48% (38% optical-
to-optical efficiency). The highest output power is 202mW.
is 1.1nm. With increasing pump, the spectral peak mi-
grates slightly to longer wavelengths. For the maximum
input pump power of 530mW, we have an average output
power of 202mW. The average output power dependence
on the pump is given in Fig.8. The QML waveguide
laser has a high slope efficiency of 48%, and a 38% over-
all optical-to-optical conversion efficiency. Stable QML
pulses are observed over∼24 hours, establishing the good
quality of the GF-SA.
In conclusion, a monolithic waveguide laser with stable
and efficient Q-switched mode-locking was demonstrated
using a transferred graphene film to an output coupler.
This is a robust, reliable, practical passive mode-locking
element, with easy integration in a waveguide cavity.
We
funding
acknowledge
from ERC Grant
NANOPOTS, EPSRC Grant EP/G030480/1, a Royal
Society Wolfson Research Merit Award, The Royal
Academy of Engineering, Emmanuel College and King's
College, Cambridge.
1 T. Hasan, Z. Sun, F. Wang, F. Bonaccorso, P. H. Tan, A.
G. Rozhin, and A. C. Ferrari, Adv. Mater. 21, 3874 (2009).
2 F. Bonaccorso, Z. Sun, T. Hasan, A. C. Ferrari, Nat. Phot.
4, 611 (2010).
3 Z. Sun, T. Hasan, A. C. Ferrari, Physica E 44, 1082 (2012).
4 D. Popa, Z. Sun, T. Hasan, F. Torrisi, F. Wang, A. C.
Ferrari, Appl. Phys. Lett. 98, 073106 (2011).
5 D. Popa, Z. Sun, T. Hasan, W. B. Cho, F. Wang, F. Torrisi,
A. C. Ferrari, Appl. Phys. Lett. 101, 153107 (2012).
6 Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F.
Wang, F. Bonaccorso, D. M. Basko, and A. C. Ferrari,
ACS Nano 4, 803 (2010).
7 Z. Sun, D. Popa, T. Hasan, F. Torrisi, F. Wang, E. Kelle-
her, J. Travers, V. Nicolosi, and A. Ferrari, Nano Res. 3,
653 (2010).
8 M. Zhang, E. J. R. Kelleher, F. Torrisi, Z. Sun, T. Hasan,
D. Popa, F. Wang, A. C. Ferrari, S. V. Popov, J. R. Taylor,
Opt. Express 20, 25077 (2012).
9 J. Ma, G. Q. Xie, P. Lv, W. L. Gao, P. Yuan, L. J. Qian,
H. H. Yu, H. J. Zhang, J. Y. Wang, D. Y.Tang, Opt. Lett.
37, 2085 (2012).
10 L. M. Zhao, D. Y. Tang, H. Zhang, X. Wu, Q. Bao, K. P.
Loh, Opt. Lett. 35, 3622 (2010).
11 D. Popa, Z. Sun, F. Torrisi, T. Hasan, F. Wang, and A. C.
Ferrari, Appl. Phys. Lett. 97, 203106 (2010).
12 F. Wang, A. G. Rozhin, V. Scardaci, Z. Sun, F. Hennrich,
I. H. White, W. I. Milne, A. C. Ferrari, Nat. Nanotechnol.
3, 738 (2008).
13 G. Della Valle, R. Osellame, G. Galzerano, N. Chiodo, G.
Cerullo, P. Laporta, and O. Svelto, Appl. Phys. Lett. 89,
231115 (2006).
14 S. J. Beecher, R. R. Thomson, N. D. Psaila, Z. Sun, T.
Hasan, A. G. Rozhin, A. C. Ferrari, and A. K. Kar, Appl.
Phys. Lett. 97, 111114 (2010).
15 A. A. Lagatsky, Z. Sun, T. S. Kulmala, R. S. Sundaram,
S. Milana, F. Torrisi, O. L. Antipov, Y. Lee, J. H. Ahn, C.
T. A. Brown, W. Sibbett, A. C. Ferrari, arXiv:1210.7042
(2012).
16 F. Bonaccorso, A. Lombardo, T. Hasan, Z. Sun, L.
Colombo, A. C. Ferrari, arXiv:1212.3319 (2012)
17 O. Okhotnikov, A. Grudinin, and M. Pessa, New J. Phys.
6, 177 (2004).
18 U. Keller, and In E. Wolf, Progress in Optics (Elsevier,
Amsterdam, 2004).
19 D. Brida, A. Tomadin, C. Manzoni, Y. J. Kim, A. Lom-
bardo, S. Milana, R. R. Nair, K. S. Novoselov, A. C. Fer-
rari, G. Cerullo, and M. Polini, arXiv:1209.5729 (2012).
20 C. Hnninger, R. Paschotta, F. Morier-Genoud, M. Moser,
U. Keller, J. Opt. Soc. Am. B 16, 46-56 (1999).
21 R. W. Boyd, Nonlinear Optics (Ac. Press, 2008).
22 S. H. Chung, E. Mazur, J. Biophot. 2, 557 (2009).
23 S. Nolte, C. Momma, H. Jacobs, A. Tnnermann,B. N.
Chichkov, B. Wellegehausen, H. Welling, J. Opt. Soc. Am.
B 14, 2716 (1997).
24 J. Mertz, Curr. Opin. Neurob. 14, 610 (2004).
25 S. A. Diddams, J. Opt. Soc. Am. B 27, B51-B62 (2010).
26 M. P. Moreno, S. S. Vianna, J. Opt. Soc. Am. B 28, 2066
(2011).
27 G. DellaValle, R. Osellame, P. Laporta, J. Opt. A 11,
013001 (2009).
28 C. Grivas, Progr. Quant. Electr. 35, 159 (2011).
29 A. Choudhary, A. A. Lagatsky, P. Kannan, W. Sibbett,
C. T. A. Brown, and D. P. Shepherd, Opt. Lett. 37, 4416
(2012).
30 A. Martinez, K. Fuse, S. Yamashita, Appl. Phys. Lett. 99,
121107 (2011).
31 H. Yu, X. Chen, H. Zhang, X. Xu, X. Hu, Z. Wang, J.
Wang, S. Zhuang, and M. Jiang, ACS Nano 4, 7582 (2010).
32 J. Liu, Y. G. Wang, Z. S. Qu, L. H. Zheng, L. B. Su, and
J. Xu, Laser Phys. Lett. 9, 15 (2012).
33 C. Mattevi, G. Eda, S. Agnoli, S. Miller, K. A. Mkhoyan,
O. Celik, D. Mastrogiovanni, G. Granozzi, E. Garfunkel,
and M. Chhowalla, Adv. Funct. Mater. 19, 2577 (2009).
34 Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z.
Y. Sun, S. De, I. T. McGovern, B. Holland, M. Byrne,
Y. K. Gun'Ko, J. J. Boland, P. Niraj, G. Duesberg, S.
Krishnamurthy, R. Goodhue, J. Hutchison, V. Scardaci,
A. C. Ferrari, J. N. Coleman, Nat. Nanotechnol. 3, 563
5
(2008).
35 T. Hasan, F. Torrisi, Z. Sun, D. Popa, V. Nicolosi, G.
Privitera, F. Bonaccorso, and A. C. Ferrari, Phys. Status
Solidi B 247, 2953 (2010).
36 A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M.
Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov,
S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401
(2006).
37 A. C. Ferrari, J. Robertson, Phys. Rev. B 61, 14095 (2000).
38 C. Casiraghi, A. Hartschuh, H. Qian, S. Piscanec, C.
Georgi, A. Fasoli, K. S. Novoselov, D. M. Basko,A. C. Fer-
rari, Nano Lett. 9, 1433 (2009).
39 A.C.Ferrari, J. Robertson, Phys. Rev. B 64, 075414 (2001).
40 S. Latil, V. Meunier, L. Henrard, Phys. Rev. B 76, 201402
(2007).
41 A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha,
U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy,
A. K. Geim, A. C. Ferrari, and A. K. Sood, Nat. Nano. 3,
210 (2008).
42 D. M. Basko, S. Piscanec, and A. C. Ferrari, Phys. Rev. B
80, 165413 (2009).
43 M. Lotya, Y. Hernandez, P. J. King, R. J. Smith, V. Ni-
colosi, L. S. Karlsson, F. M. Blighe, S. De, Z. Wang, I. T.
McGovern, G. S. Duesberg, and J. N. Coleman, J. Am.
Chem. Soc. 131, 3611 (2009).
44 V. G. Kravets, A. N. Grigorenko, R. R. Nair, P. Blake, S.
Anissimova, K. S. Novoselov, and A. K. Geim, Phys. Rev.
B 81, 155413 (2010).
45 K. F. Mak, M. Y. Sfeir, Y. Wu, C. H. Lui, J. A. Misewich,
and T. F. Heinz, Phys. Rev. Lett. 101, 196405 (2008).
46 Z. Q. Li, E. A. Henriksen, Z. Jiang, Z. Hao, M. C. Martin,
P. Kim, H. L. Stormer, and D. N. Basov, Nature Phys. 4,
532 (2008).
47 Y. Nasu, M. Kohtoku, Y. Hibino, Opt. Lett. 30, 723
(2005).
48 R. Mary, S. J. Beecher, G. Brown, R. R. Thomson, D.
Jaque, S. Ohara, and A. K. Kar, Opt. Lett. 37, 1691
(2012).
49 M. Bass, E. W. Van Stryland, Fiber optics handbook:
fiber, devices, and systems for optical communications
(McGraw-Hill, 2002).
50 D. v. d. Linde, Appl. Phys. B 39, 201 (1986).
|
1907.10058 | 1 | 1907 | 2019-07-23T15:43:53 | Transport in two-dimensional topological materials: recent developments in experiment and theory | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"cond-mat.other",
"cond-mat.supr-con",
"quant-ph"
] | We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace. | cond-mat.mes-hall | cond-mat | Topical Review
Transport in two-dimensional topological materials:
recent developments in experiment and theory
Dimitrie Culcer1, Aydin Cem Keser1, Yongqing Li2,
Grigory Tkachov3
1 School of Physics and Australian Research Council Centre of Excellence in
Low-Energy Electronics Technologies, UNSW Node, The University of New
South Wales, Sydney 2052, Australia
E-mail: d.culcer@unsw.edu.au
E-mail: a.keser@unsw.edu.au
2 Beijing National Laboratory for Condensed Matter Physics, Institute of
Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing
100049, China
E-mail: yqli@iphy.ac.cn
3 Institute of Physics, Augsburg University, 86135 Augsburg, Germany
E-mail: gregor.tkachov@physik.uni-augsburg.de
July 2019
Abstract. We review theoretical and experimental highlights in transport in
two-dimensional materials focussing on key developments over the last five years.
Topological insulators are finding applications in magnetic devices, while Hall
transport in doped samples and the general issue of topological protection remain
controversial. In transition metal dichalcogenides valley-dependent electrical and
optical phenomena continue to stimulate state-of-the-art experiments. In Weyl
semimetals the properties of Fermi arcs are being actively investigated. A new
field, expected to grow in the near future, focuses on the non-linear electrical and
optical responses of topological materials, where fundamental questions are once
more being asked about the intertwining roles of the Berry curvature and disorder
scattering. In topological superconductors the quest for chiral superconductivity,
Majorana fermions and topological quantum computing is continuing apace.
9
1
0
2
l
u
J
3
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
8
5
0
0
1
.
7
0
9
1
:
v
i
X
r
a
CONTENTS
Contents
1 Introduction
2 Background
3 Hamiltonians and Kinetics
4 2D Topological Insulators
4.1 CdTe/HgTe/CdTe quantum wells . . . .
4.2
InAs/GaSb . . . . . . . . . . . . . . . .
4.3 Other 2D TI candidates . . . . . . . . .
2
3
7
8
8
8
9
5 3D Topological Insulators
10
5.1 Early experiments on 3D TIs
. . . . . .
10
5.2 Electronic properties of 3D TIs . . . . .
11
5.2.1 Aharonov-Bohm effect . . . . . .
11
5.2.2 Weak antilocalisation . . . . . .
12
5.2.3 Quantum Hall effect . . . . . . .
14
5.2.4 Planar Hall effect . . . . . . . . .
15
5.2.5 Topological magnetoelectric effect 16
16
5.3 Novel magnetism with 3D TIs . . . . . .
5.3.1 Breaking time-reversal symme-
try in 3D TIs . . . . . . . . . . .
5.3.2 Magnetically doped 3D TIs . . .
5.3.3 Magnetic heterostructures . . . .
5.3.4 Magnetic ordering in TIs: theory
5.3.5
Spin-orbit torque . . . . . . . . .
5.3.6 Anomalous Hall effects . . . . . .
5.3.7 Topological protection . . . . . .
10 Topological weak superconductivity and
the fractional Josephson effect.
10.1 Majorana zero modes in a 1D chiral TS
10.2 Fractional Josephson effect.
Phe-
nomenology . . . . . . . . . . . . . . . .
10.3 Recent theories of the fractional JE.
Non-equilibrium dynamics . . . . . . . .
10.4 Equilibrium tests of the fractional JE . .
10.5 Beyond the 4π periodicity . . . . . . . .
11 Unconventional superconductivity
11.1 Mixed-parity superconducting order pa-
rameter. Phenomenology . . . . . . . .
11.2 Theory of the mixed-parity proximity
effect . . . . . . . . . . . . . . . . . . . .
11.3 Odd-frequency triplet superconductivity
11.4 Nonunitary triplet pairing and charge-
spin conversion . . . . . . . . . . . . . .
12 Outlook
1. Introduction
2
35
36
37
38
38
40
40
40
41
43
43
45
The new millennium has witnessed the seemingly
inexorable rise of topological phenomena, culminating
with the 2016 Nobel Prize in Physics. The term
topological materials encompasses a broad range of
structures that exhibit topological phases [1, 2], which
can be characterised by a topological invariant that
remains unchanged by deformations in the system
Hamiltonian, e.g. the Z2 invariant, the Chern number,
or more generically the Berry curvature, whose integral
over the Brillouin zone yields the Chern number.
Topological materials include topological
insulators
(TI) [3, 4], Weyl and Dirac semimetals (WSM, DSM)
[5], transition metal dichalcogenides (TMD) [6], which
are often termed 2D materials by themselves, graphene
subject to a proximity effect [7, 8], and topological
superconductors [3]. The distinction is not always clear
cut, since some categories overlap: for example, certain
dichalcogenides can become topological
insulators
under appropriate circumstances [9, 10], while others,
such as WTe2, can be Weyl semimetals.
2D topological materials offer opportunities that
did not exist previously. The electron gas is on the
surface and is directly accessible, unlike semiconductor
heterostructures, where it is buried. This facilitates
excellent electrostatic control over the conduction in
the 2D channel, which enables transistor applications,
16
17
18
19
20
22
24
25
6 Valley-dependent phenomena
7 Probing Fermi arcs in Weyl semimetals
26
8 Non-linear electrical response
9 Chiral superconductivity, Majorana edge
modes and related phenomena
9.1 Chiral superconductivity. A primer . . .
9.2 Search for intrinsic chiral superconduc-
tivity and related phenomena . . . . . .
9.3 TI materials as platform for topological
28
29
30
31
superconductivity and Majorana fermions 32
9.4 Chiral TS with a single Majorana edge
mode in QAHI/supercondictor structures 33
CONTENTS
3
as well as accessibility to light for optical applications.
The major advantages of TMDs is that they can
be made atomically thin and have a direct band
gap, making them ideal
for optical emitters and
detectors. They exhibit strong excitonic effects and
piezoelectricity [11]. WSMs and TMDs can have
very high mobilities. Many topological materials
exhibit very strong spin-orbit coupling, which, under
appropriate conditions, yields dissipationless edge state
conduction without large magnetic fields, leading to
potential transistor applications through the quantum
spin and anomalous Hall effects. An example is
provided by WSe2, which has an extraordinarily large
spin-orbit coupling, a wide direct band gap, and
especially a strong anisotropic lifting of the valley
degeneracy in a magnetic field, which makes it ideal
for accessing the valley degree of freedom. Likewise,
in TI spin-orbit torques have taken off spectacularly,
especially since the low mobilities of TIs are not a
concern as long as large currents can be achieved
by increasing the electron density, as was done in
Bi2Te3 [12]. Topological superconductivity has seen
spectacular growth, with exciting developments in
achieving chiral superconductivity, Majorana edge
modes
the fractional Josephson effect and
unconventional Cooper pairing.
[13],
In direct analogy with the rise of graphene,
topological materials have matured into a topological
zoo with broad applications across different fields. In
this review we emphasise this breadth of interest while
bringing out conceptual unifying features such as spin-
and pseudospin-charge coupling, the Berry curvature
and inter-band effects and their interplay with disorder,
and Cooper pairing in topological materials. We
concentrate on the most actively researched two-
dimensional transport phenomena in TI, TMD, WSM
Fermi arcs and TSC, and include highlights from
optical studies, since transport and optical responses
are intertwined, and are broadly described by linear
response theory. They must frequently be considered
on the same footing, for example in determining the
non-linear optical response,
in which a DC shift or
rectification current is also generated.
The bulk of
the review focuses on surface
states. We first present a conceptual overview of the
subject,
followed by a review of transport in non-
superconducting topological materials. The theoretical
component of this section centres on insights obtained
from linear-response theory and extensions thereof,
while the experimental component reviews progress
in the laboratory.
After introducing the model
Hamiltonians and outlining the concepts behind
linear response and inter-band coherence, we discuss
transport in topological
insulators, with particular
emphasis on weak localisation and anti-localisation,
spin-orbit
the quantum Hall effect,
torques and
their relation to the current-induced spin polarisation
and spin-Hall transport, magnetoresistance and the
anomalous Hall effect. We pay special attention
to the continuing controversy surrounding topological
protection and transport by the edge states of
topological insulators. The anomalous Hall effect has
an extension in transition metal dichalcogenides, which
have multiple valleys, and exhibit a valley-Hall effect,
which is reviewed next. In Weyl semimetals we focus
on Fermi arcs and their manifestation in transport. We
discuss the non-linear electrical response, a burgeoning
field with important unanswered theoretical questions
and potential applications in photovoltaics and solar
energy. The latter half of the review is devoted to
the latest theoretical and experimental developments
in chiral superconductivity, Majorana edge modes and
related phenomena in topological superconductivity.
2. Background
In this section we attempt a conceptual summary
of topological materials and Weyl-Dirac physics in a
condensed matter context, and transport phenomena
in these materials. Our aim is to provide basic
explanations for commonly encountered terms in the
literature.
(1)
Degeneracy points. In resonators and crystals, the
spectrum can be drawn as a function of wave/crystal
momenta.
If the energy levels are degenerate at
a fixed momentum, a perturbation would lift the
degeneracy, a phenomenon called avoided crossings.
However in a two band system, the perturbation moves
the degeneracy point in momentum space rather than
rendering the spectrum gapped. This is because, a 2×2
Hermitian matrix can be decomposed in terms of the
identity and the Pauli matrices,
H2×2 = a0(k)σ0 + ai(k)σi
and for the eigenvalues to coincide viz. E1 = E2 = a0,
three functions ai must vanish.
If this accidentally
happens at the point k∗, then a small perturbation
would simply move this point in the Brillouin zone
(BZ). The situation was well understood since the
early days of quantum mechanics [14].
It was later
understood for example that the dispersion looks conic
around the accidental degeneracy, dubbed diabolical
point [15]. This fact can easily be seen by linearizing
Eq. 1 around k∗. For simplicity, if we assume that
this cone is isotropic, the Hamiltonian around the
degeneracy point behaves either like H = vF σσσ · k, or
−vF σσσ· k up to an additive constant. Save for the value
of the Fermi velocity vF , these are the chiral and anti-
chiral Weyl partners that make up a Dirac fermion,
such as a relativistic electron, albeit in the limit of
zero rest mass.
CONTENTS
4
Dirac/Weyl equation, chirality. Let us briefly
explore this analogy with relativistic motion of high
energy particles.
Dirac equation describes posi-
tive/negative energy states describing particles/anti-
particles with spin. A particle can possess a spin vector
that is parallel/anti-parallel to its orbital motion. This
is captured in the helicity operator σσσ · k. Since, mass-
less particles travel at the speed of light, this property
is Lorentz invariant and equivalent to 'chirality'. Our
linearized Hamiltonian is proportional to the chirality
operator, hence the sign of Fermi velocity gives the chi-
rality. If around the degeneracy point, the cone is not
isotropic, we can simply contract or stretch this cone
to make it so, and use this straight forward definition.
i (kj − k∗
In other words, if we expand ai(k)σi ≈ aj
j )σi,
the sign of the determinant of aj
i doesn't change if we
stretch or rotate the cone, hence sgn(det(ai
j)) defines
chirality.
Location of Weyl points in BZ. We should not take
this analogy too literal, because crystals can have a lot
of different properties while the space-time vacuum is
constrained by many symmetries. For example, the
excitations in a crystal do not have to obey a Lorentz
symmetry, hence the cone around the degeneracy point
can be anisotropic and arbitrarily tilted. Moreover, we
can have a degeneracy at k∗
+, with positive chirality
− (cid:54)= k∗
and a negative chirality counter-part at k∗
+.
So unlike the ordinary (relativistic) massless Dirac
fermion where the chiral partners exist at the same
point, we can have degeneracy points with either
chirality at various locations in the Brillouin zone.
Total chirality, Nielsen-Ninomiya Theorem.
In-
deed, every positive chirality degeneracy point must
come with its negative chirality counter-part as long as
the bands are defined on a periodic structure, that is
the BZ. This statement is called the Nielsen-Ninomiya
theorem. Instead of a rigorous proof, we will give an in-
tuitive explanation. If we cut a 1D dispersion relation
curve f (kz), with a constant energy line, we intersect
the curve various times. We can convince ourselves
that if the band is a smooth curve, which it is, we in-
tersect it at even number of points, moreover, at half
of these points, the curve has positive slope and at the
other half, negative. In three dimensions, suppose that
the degeneracy points lie on the kz axis. Linearizing
the Hamiltonian in the kx − ky direction looks for ex-
ample like, H = f (kz)σz + kxσx + kyσy. Since f (kz) is
periodic in BZ, the linearized Hamiltonian around the
degeneracy points are kxσx + kyσy ± kzσz, hence have
opposite chirality.
Weyl points under discrete symmetries. As long
as we have center of inversion in the crystal, that is
inversion symmetry I, we know where to find the chiral
If we have a Weyl point at k∗, say with
partners.
cone +σσσ· (k − k∗), we must have −σσσ· (k + k∗) at −k∗.
These are nothing but the +/− chiral Weyl points.
Similar analysis applies if the crystal has mirror planes.
Another important discrete symmetry is time reversal
T . Intuitively, when the direction of time is reversed,
so does that of momentum and spin. Since chirality
is spin component in the direction of momentum, it
In the condensed matter case,
is invariant under T .
instead of spin we are talking about the band index
or eigenvector of σ, usually called pseudo-spin. In this
case, T switches the sign of k and σy which leaves
chirality invariant. Therefore if there is T -symmetry,
the number of Weyl points must be a multiple of
four: for every pair that are T -partners with positive
chirality another pair with negative chirality must
exist so that the total chirality is zero. We must be
more careful, when both inversion and time-reversal
symmetries present in the system like, as we discuss
below.
Dirac points and mass gap instability.
In an actual crystal we have many bands. We
can argue that the other bands are further away in
energy so we can apply the analysis to those two bands
that cross each other and treat the rest as conduction
and valence bands. But what if, the bands come
in completely degenerate pairs?
Indeed this is the
case, if we have both T (there is no magnetization
in any form) and I (there is a center of inversion).
For example, if we have an electronic spin up state
at k, then the time reversed partner state sits at −k
with spin down. Moreover, by inversion symmetry,
another state with spin down must sit right on top
of the one with spin up at k. There is no surprise here,
electrons come with spin partners and if there is no
magnetic couplings the spin is treated as dummy, hence
there are at least two electrons at any momentum.
A perturbation can not open a gap as long as it
does not contain spin dependent forces, hence all the
analysis so far goes as is, save for a doubling of every
Weyl point. However, spin-orbit coupling exists and
sometimes very strong in these materials. Therefore
spin degeneracy is already lifted. Nevertheless, the
existence of IT symmetry still guarantees two-fold
degeneracy. This fact is known as Kramer's theorem,
that we can informally illustrate as follows. We have
already mentioned that, the existence of T , requires
that a Weyl point at k∗ in BZ is accompanied by
another with the same chirality at −k∗. On the other
point at k∗ again! So, after all, in case there is IT , we
must have two opposite chirality Weyl fermion sitting
on top of each other. This means isolating the 2 × 2
subspace like we did in Eq. 1 is not possible, because a
generic perturbation applies on a 4 × 4 subspace that
has IT . It turns out that, we can decompose such a
matrix in terms of 5 generators instead of the 3 Pauli
hand I requires that we have opposite chirality Weyl
CONTENTS
5
matrices. Therefore, we need 5 functions, each taking 3
momenta as parameters, to vanish. This is not possible
unless enforced by additional symmetry or fine tuning.
Once it is achieved, the resulting system is called a
Dirac semi-metal, owing to the fact that two chiral
Weyl partners at the same momentum point make up
a Dirac particle with mass zero. Even when a gap
opens, the resulting massive Dirac fermion might not
be a trivial insulator.
Topological insulator as a Dirac system, gapless
boundary modes. We can see what happens to
the linearized band structure when Weyl fermions of
opposite chirality coincide at the same momentum
point. A perturbation can open a mass gap m of either
sign that renders the linearized Hamiltonian
H =
−vF σσσ · (k − k∗)
m
m
vF σσσ · (k − k∗)
(cid:18)
(cid:19)
(2)
that is the four component Dirac equation with mass
m. The real surprise comes, when we impose a
boundary to this material where m, switches sign. If
the boundary is defined by z = 0, with m = msgn(z),
it turns out that there must be a localized state
−(cid:82) z
(cid:48)
(cid:48)
(ψ1(cid:105),ψ2(cid:105))T
where ψ1 and ψ2 are 2-spinors that satisfy
ψ(cid:105) = e
0 m(z
)dz
ψ1(cid:105) = −iσzψ2(cid:105)
(3)
∗
y)
∗
x) + vF σy(ky − k
To solve the Dirac equation, the two-spinor ψ2 must
be an eigenstate of
Hboundary = vF σx(kx − k
This means we have a gapless mode localized at the
interface. In general, there is a gapless Hamiltonian,
proportional to σσσ(cid:107)·k(cid:107) parallel to the surface. Ordinary
insulators,
including the vacuum obey the Dirac
equation, with a positive mass. Therefore, if a gapless
surface mode does not exist on the boundary of an
insulator, we call it ordinary, if it does, the crystal
is called a topological insulator (TI). This fact has a
microscopic interpretation. The bands are nothing but
coalesced atomic orbitals. If strong spin orbit coupling
reverses the energy order of atomic orbitals, the band
gap is inverted, so does the sign of the Dirac mass m.
At a boundary with an ordinary insulator, the atomic
orbitals should go back to their natural order at which
point they have to meet at the same energy, so the gap
must close at the boundary.
Number of gapless surface mode as a topological
invariant. If the number of boundary modes were to
exceed 1, we would be able to gap them out in pairs
if we have two
without breaking T . For example,
boundary modes σxkx + σyky ± mσz are both gapped
and time reversal partners. Therefore the number of
gapless boundary modes is either 1 or 0, which is called
the Z2 invariant.
Chern insulator. Breaking T at the boundary,
say by depositing magnetic impurities on the surface,
can gap out the only gapless mode on the surface of a
topological insulator. Now the boundary is described
by the 2D massive Dirac Hamiltonian
(cid:48)
)dx
(4)
(cid:48)
0 m(x
ψ(cid:105) = e−(cid:82) x
H2D = σxkx + σyky + mσz
called the Chern insulator. Just as in the 3D case,
there will be a gapless mode at the boundary where
the mass switches sign, say at x = 0 from −m to
m. Since ky is a good quantum number, the ansatz
eikyσy = 1(cid:105) solves the eigenvalue
equation. This mode has the dispersion ky, hence is
chiral, meaning it only propagates in +y direction and
can not backscatter. Indeed it is the boundary mode
of the quantum Hall insulator. The above discussion
implies that we can obtain quantum Hall effect if
we take a spherical topological insulator and pierce
it with a magnetic field. The gapless surface modes
on the upper and lower hemispheres will acquire gaps
with opposite signs due to the magnetic field. A
chiral mode will develop on the equator.
If we put
terminals on two antipodal points on the equator and
pass current between them, being chiral, only half of
the equator will carry the current. The excess electrons
compared to the other half,
leads to a transverse
voltage. We can compute the ensuing Hall conductivity
by counting the excess charge in a 1D channel. If the
current is I, then N = I/(evF L) additional electrons
populate one side of the equator with length L. The
difference in transverse chemical potential due to this
many excess electrons is found by using the dispersion
relation vF δk = hvF N L = hI/e = e∆V . This
means the Hall conductivity is σxy = e2/h. This
is the quantum anomalous Hall effect (QAHE). The
time reversal breaking is usually achieved by magnetic
impurities deposited on the surface of real topological
insulators.
Topological state of graphene, Haldane model. We
also have a strictly 2D realization of the 2D Dirac
Hamiltonian,
that is graphene. Graphene comes
with two copies of Dirac fermions due to having two
high symmetry points in the BZ, excluding the spin
degeneracy. These can acquire equal and opposite
mass gaps when T is intact but I is broken, say
due to sublattices being at different energy. The
resulting system is an ordinary insulator.
If on the
other hand, T is broken, as in Haldane model [16],
the two fermions acquire the same mass, the resulting
becomes a Hall insulator, just like the surface of a TI
with broken T . However, in actual graphene, there is
an additional spin degeneracy. If a spin-orbit coupling
exists, and T is intact, we have two copies of the
Haldane model that are time-reversals of each other.
The chiral edge modes then counter propagate and
therefore the Hall conductivity vanishes. However,
CONTENTS
6
since these modes have opposite momentum, and spin
is locked to momentum,
in the presence of electric
field, they create a net spin current and produce the
quantum spin Hall effect (QSHE) [17]
Fermi arcs. The relation between the bulk band
structure and the boundary modes is one of the key
points in the study of topological systems. These
modes due to their protected structure has unusual
transport signatures and lead to precise quantization
of transport coefficients such as Hall conductivity. In
addition to the gapless surface mode of a topological
insulator and the chiral edge modes of a gapped surface
mode, we also have chiral modes due to Weyl fermions
called Fermi arcs. If the Weyl fermion comes incident
to a boundary, say x = 0 from the left, it reflects with
momentum in −x-direction. However, since chirality
of a Weyl fermion is fixed, the spin in x-direction
must flip as well. This means the Weyl fermion at the
boundary can not have spin in x, hence is an eigenstate
of cos(α)σy + sin(α)σz. If we assume α = 0, and that
we have a positive chirality Weyl fermion at k = 0, we
get the same chiral solution as in the Chern insulator,
ψ+ = exp(−kzx+iky)σy = +(cid:105) but this time the decay
constant into the bulk is kz < 0. If we do the same
analysis for the Weyl fermion with opposite chirality,
we find that it is ψ− = exp(kzx + iky)σy = +(cid:105), so
this time, kz > 0 so that the wave decays into the bulk
in x < 0. As kz → 0, the decay constant approaches
zero and the surface state becomes a bulk mode. Since
Weyl points come in chiral partners located at k∗
±, the
surface mode has kz < k∗
−, hence a 'Fermi
arc' in the BZ. Just as in the Chern insulator, these
chiral modes contribute to Hall transport. Since now
there are az(k∗
−)/2π modes available, if the sample
has size az in z-direction, the 3D quantum anomalous
Hall conductivity is σxy = ∆ke2/(2πh), where ∆k is
the separation of nodes in BZ.
+ and kz > k∗
+−k∗
All this looks quite curious, but why exactly is
it that the boundary and bulk properties of certain
modes are related and in any way relevant to transport
properties of actual materials with so much other
complications such as disorder and interactions?
Berry Curvature. To answer this question, we
simply write down the equation of motion for a
wave packet of electrons moving in the lattice. The
Lorentz force due to external electromagnetic field
steers this packet around the crystal, more generally
in the phase space. However, the Hamiltonian of
the electron depends on the position of the packet
in the phase space. This means we are dealing with
a situation where the Hamiltonian is adiabatically
changed through a parameter, in this case momentum,
as the wavefunction evolves, which was considered by
Berry. The wavefunction acquires a phase at every
point in parameter space to account for the changes
in the Hamiltonian, called the Berry phase. This
immediately produces a gauge field defined on the
parameter space, which is BZ in a crystal. After all,
what is electromagnetic field? It is a manifestation of
wavefunctions acquiring different phases at every point
of space-time. Now it also acquires local phases in
momentum space, hence there must be an analogous
term in the equation of motion
(5)
(6)
x = ∇kε − k × ΩΩΩ,
k = − e(E + x × B)
The electric-like component is due to the phase that is
local in time, that is the dynamical phase e−iεt a wave-
function acquires during its evolution. The spatial part
of phase is
Ai = −i(cid:104)u∂kiu(cid:105)
where u is the periodic part of the Bloch wave.
Therefore the arising magnetic-like field is
ΩΩΩ = ∇k × A
(7)
(8)
(9)
(cid:73)
Ω · dS = ±1
Berry Curvature due to Weyl points. Now we see
that the BZ structure directly influences the motion of
electron, we can calculate the Berry curvature Ω due
to a Weyl node. We find that it satisfies
1
2π
when the surface surrounds a +/− chirality Weyl point
respectively. The fact that Weyl points must come in
chiral partners imply that the if we take a surface that
contains all Weyl points, or the BZ itself, the result is
zero. This means that +/− chirality Weyl nodes are
sources/sinks of Berry curvature.
The
integral of Berry curvature over the BZ is called
the Chern number and turns out to be an integer
topological
it
measures how many times the pseudo-spin vector
wraps around the unit sphere as we traverse across the
whole BZ. At an interface between two crystals with
different Chern numbers, the net chirality of boundary
modes must match the difference in Chern numbers,
a fact commonly referred to as the 'bulk boundary
correspondence' [18, 19].
Berry Curvature and Chern invariant.
In the two band case,
invariant.
Topologically protected transport properties. More-
over, transport properties can be expressed in terms
of the Chern number, because computation involves a
summation over occupied states. In an insulator, this
means integrating over the completely filled band over
the BZ. Specifically in the Chern insulator, this inte-
gral turns out to be the Chern number. Disorder and
interactions can not destroy this property as it is due
to filled states [18, 19].
CONTENTS
3. Hamiltonians and Kinetics
(10)
topological
x − 3kxk2
y),
The surface states of
insulators are
described by the following Dirac-Rashba Hamiltonian:
HT I = A (sxky − sykx) + λsz(k3
where A and λ are material-specific parameters, s is
the vector of Pauli spin matrices, and k is the two-
dimensional wave vector. The hexagonal warping term
is particularly strong in Bi2Te3. These states reside
on opposite surfaces of a three-dimensional slab, yet
usually all surfaces have topological states, which in
Hall transport in particular mean that current can flow
around the edges. The limitations of effective k · p
methods for thin films are discussed in [20], where it is
pointed out that open boundary conditions may yield
different conclusions regarding the edge states than ab-
initio calculations.
Dirac and Weyl semimetals are described as
different cases of the following Hamiltonian [5],
HDW SM = vτxσ · k + m τz + b σz + b
(cid:48)
τzσx,
(11)
where σ represents a pseudospin degree of freedom,
τ the valleys or nodes, m is a mass parameter, and
b and b0 are effective internal Zeeman fields. Dirac
semimetals have a single node and correspond to the
case m = b = b(cid:48) = 0, while the simplest model of
a Weyl semimetal has two nodes that arise in the
case b > m and b(cid:48) = 0, that act as source and
sink of Berry curvature.
In known materials, there
are typically many more pairs of nodes. If the Weyl
points arise due to broken inversion symmetry with
respect to Mx, My mirror planes, there are 4 pairs of
Weyl nodes, (±kx,±ky,±kz) including time reversal
partners. There are as many as eight pairs in TaAs
family due to the additional C4 rotational symmetry
(±ky,±kx,±kz) [21]).
separation between a Weyl node and
its partner with opposite chirality determines the
electromagnetic response of the material that contains
the so called 'axion term'. Such a term is the source
of chiral magnetic effect (CME) and the quantum
anomalous Hall effect (QAHE) in Weyl semimetals
[22, 23, 24].
The
Transition metal dichalcogenides are described by
the following generalised Hamiltonian [6]:
∆
2
σz − I
2
σz − λ τ
sz, (12)
HT M D = A (τ σxkx + σyky) +
where s represents spin, τ = ± is the valley, and
σ is an orbital pseudospin index, analogous to the
sublattice pseudospin encountered in graphene. The
spin splitting at the valence band top caused by the
spin-orbit coupling is denoted by 2λ. Additional terms
encapsulate the spin splitting of the conduction band,
the electron-hole asymmetry and the trigonal warping
of the spectrum [25, 26]. The trigonal warping term
has the form:
7
κ
2
(σ+k2
+ + σ−k2−),
(13)
HT W =
where σ± = σx ± i σy. There is always a gap between
the valence and conduction bands, which is manifested
in the mass appearing in each of the copies of the Dirac
Hamiltonian. Consequently, to satisfy time reversal
invariance, the materials have two valleys, which are
related by time reversal.
Interaction terms coupling
TMDs to external electromagnetic fields are covered in
[27].
Linear response calculations traditionally employ
standard, well-established transport theory techniques
such as the Kubo and Keldysh formalisms or the
semiclassical wave-packet approach combined with the
Boltzmann equation. Yet the presence of spin- and
pseudospin-charge coupling in topological material
Hamiltonians causes electromagnetic fields to induce
inter-band dynamics, which have a subtle interplay
with disorder. Such effects are most clearly seen in the
density-matrix theory [28]. The single-particle density
matrix ρ obeys the quantum Liouville equation
dρ
dt
where H is the total Hamiltonian. The density matrix
is decomposed into two parts: one part, denoted by
(cid:104)ρ(cid:105),
is averaged over impurity configurations, while
the remainder, which is eventually integrated over,
is denoted by g: ρ = (cid:104)ρ(cid:105) + g, with (cid:104)g(cid:105) = 0.
In
linear response to an electric field E the density
matrix comprises equilibrium and non-equilibrium
components (cid:104)ρ(cid:105) = (cid:104)ρ0(cid:105) + (cid:104)ρE(cid:105), where (cid:104)ρE(cid:105) is the
correction to the equilibrium density matrix (cid:104)ρ0(cid:105) to
first order in E. The kinetic equation is linearised with
respect to E:
i
[H, ρ] = 0,
(14)
+
(cid:48)
(cid:26)
(cid:27)
,
(cid:48)
(cid:48)
(cid:48)
(cid:48)
=
k
+
∂k
(15)
k )]
δmm
k ) − f0(εm
+ J((cid:104)ρE(cid:105))mm
[f0(εm
i
[H0,(cid:104)ρE(cid:105)]mm
(cid:48) ∂f0(εm
k )
+ iRmm
d(cid:104)ρE(cid:105)mm
dt
eE
·
where H0 is the band Hamiltonian, J((cid:104)ρ(cid:105)) is a
generalised scattering term, f0(εm
k ) the Fermi-Dirac
distribution, and Rmm
∂k (cid:105) is the Berry
connection. Its appearance in the driving term gives
rise to the Berry curvature intrinsic contribution to
the Hall conductivity of systems with broken time
reversal symmetry, and to other response properties.
The Fermi occupation number difference factor makes
it evident that this term drives off-diagonal response
and therefore inter-band coherence contributions to the
electrical response.
k i ∂um(cid:48)
= (cid:104)um
k
k
(cid:48)
This formulation is exactly equivalent to the
quantum Boltzmann equation and has shed light on
CONTENTS
8
the physical origin of the chiral anomaly of Weyl
semimetals [29].
It shares a similar philosophy with
the Keldysh method but without requiring an Ansatz
for the Keldysh component and integration over an
additional energy variable, which become opaque in
complex, multi-band systems.
In this approach one
can immediately separate intrinsic effects, extrinsic
effects, and effects that combine interband coherence
and disorder. A similar, Boltzmann equation-based
theory gives a full account of phonon physics [30], while
an related approach being developed at present [31]
relies on the semiclassical transport framework. It will
be interesting to see what insight can be gained from
the density matrix theory in describing localisation
physics, which received tremendous attention in the
first half of this decade [32, 33, 34, 35, 36, 37, 38, 39]
and interaction physics in topological materials [40].
The theory is being generalised to second order in
the electric field [41] where, in addition to the Berry
curvature dipole term to be discussed below, additional
disorder-mediated corrections to the non-linear Hall
tensor were identified that have the same scaling in
the impurity density.
quantization of edge conductance is much less precise
than the quantum Hall effect [47]. This was attributed
to spin dephasing [48] or inelastic backscattering
processes related to charge puddles in the bulk [49,
50]. For a sufficiently long QSH edge channel, the
transport is no longer in the ballistic regime, and the
longitudinal resistance increases linearly with channel
length L, namely R ∼ h
, where Lϕ is the spin
dephasing/inelastic backscattering length, usually on
the order of micrometer.
L
Lϕ
2e2
The edge channels in the inverted HgTe quan-
tum wells were imaged with a scanning microwave
impedance probe technique, and the edge conduction
was however found to vary very little for magnetic fields
up to 9 T [51]. The robustness of edge transport was
also observed in a nonlocal electron transport exper-
iment. Using samples with voltage probes separated
up to 1 mm, Gusev et al. found that the nonlocal re-
sistance is of the order 100 kΩ and insensitive to the
strength of the strength of in-plane magnetic field for
B < 5T [52]. Such low resistances are quite surprising,
given that the inelastic scattering length is on the order
of micrometer in HgTe/CdTe edge channels [45, 46].
4. 2D Topological Insulators
4.2. InAs/GaSb
In this section, we review the experimental work on
two-dimensional (2D) topological insulators (TIs) that
are protected by the time reversal symmetry and can
be characterized by topological invariant Z2. First
identified by Kane and Mele, this type of 2D TIs
can be manifested as the quantum spin Hall effect
(QSHE) in transport[42, 43], and thus often referred
to as quantum spin Hall (QSH) insulators.
4.1. CdTe/HgTe/CdTe quantum wells
Following the prediction of Bernevig et al. [44] that
the HgTe/CdTe quantum well with inverted band
structure could be a 2D TI, Konig et al.
reported
the evidence of QSHE in this system in 2007 [45].
As shown in Fig. 1, the four-terminal resistances of
micrometer-scale Hall-bar shaped HgTe/CdTe samples
in the inverted regime is approximately 2h/e2, a value
expected for the helical edge transport in the ballistic
regime. In contrast, for a sample with the thickness of
the HgTe layer less than 6.3 nm, the critical thickness
for band inversion, the resistance increases to the order
of mega-ohm, consistent with the insulating behavior
expected for the topologically trivial regime. Further
evidence for the QSHE in HgTe quantum wells was
obtained with non-local transport in micrometer-sized
devices of various geometries [46]. The experimental
results are in agreement with the Landauer-Butikker
theory adapted for the edge transport in 2D TIs.
However, even for micrometer-sized QSH samples, the
InAs/GaSb quantum wells were also predicted to be a
2D TI candidate [53]. In 2011, Knez et al. reported
the evidence for edge transport in this system, despite
that the parallel bulk conduction had to be subtracted
from the total conductance [54]. Du et al.
[55]
subsequently managed to use Si-doping to suppress the
bulk conductivity and observed quantized edge channel
conductance with a precision level of ∼ 1%. The
edge channel conductance in this sample was found
to remain quantized for in-plane magnetic fields up to
12 T and in a wide range of temperatures (20 mK to
4 K).
The insensitivity of the edge channel conductance
to strong magnetic fields is puzzling at the first sight,
since the Zeeman energy is expected to open a gap,
leading to a destruction of the helical edge states. This
phenomenon was explained recently by two groups,
who pointed out that the small energy gap generated
by the Zeeman energy is buried in the bulk valence
band, and hence the helical edge transport is barely
influenced by the magnetic field [56, 57].
Similar
argument was also used to explain the robustness of
edge transport in HgTe quantum wells [57]. It should
be noted, however, if the Dirac point is indeed buried
in the bulk bands, this would be are detrimental to
pursue the Majorana physics (see Secs. 9 and 10 for a
review of topological superconductivity), despite that
pronounced superconducting proximity effect has been
demonstrated in a HgTe/CdTe QSH system [58].
Nichele et al.
reported that the transport
CONTENTS
9
Figure 1. Observation of the quantum spin Hall effect in HgTe/CdTe quantum wells. (a) Band gap Eg of HgTe/CdTe quantum well
as a function of d, the thickness of the HgTe layer. Band inversion (negative Eg) takes place when d > dc = 6.3 nm. The inset shows
the evolution of several subbands of the quantum well. (b) Four-terminal resistances of four Hall-bar shaped HgTe/CdTe quantum
well samples (I-IV). Sample I is in the normal regime (d = 5.5 nm), whereas samples II-IV are in the inverted regime (d = 7.3 nm).
The sizes of the samples II, III and IV, given in the formats of L × W , are 20 × 13.3 µm2, 1 × 1 µm2, and 1 × 0.5 µm2, respectively.
The definitions of L and W are given in the upper-right inset. Adapted from Konig et al., Science 318, 766 (2007) [45].
properties of micrometer-sized InAs/GaSb wells in the
non-inverted regime are phenomenologically similar
to those observed in the inverted regime [59]. The
downward band bending of the InAs conduction near
the sample edge was proposed as a possible origin of
the topologically trivial edge states [59]. The existence
of such trivial edge states was further manifested in
counterflowing edge transport in the quantum Hall
regime [60]. Shojaei et al.
recently measured the
temperature and magnetic field dependences of a dual-
gated InAs/GaSb quantum well, and concluded that
the small hybridization gap (a few meV) in the inverted
regime is overwhelmed by the disorder effect, and
the transport is thus similar to a disordered two-
dimensional metal of symplectic class [61].
4.3. Other 2D TI candidates
In addition to aforementioned semiconductor het-
erostructures, many 2D materials have been identi-
fied theoretically to be 2D TIs, such as monolayers
of Si [62], Ge [62], Sn [63], Bi [64], ZrTe5 [65] and
WTe2 [66], Bi bilayers [67], as well as many hybrid
structures based on graphene [68]. A lot of experimen-
tal efforts were devoted to single-element TI candidates
(e.g.
silicene, germanene, stanine [69]), which were
prepared mostly with molecular beam epitaxy (MBE)
and characterized in situ with scanning tunneling mi-
croscopy (STM) or angle resolved photoemission spec-
troscopy (ARPES). Evidence for the existence of edge
channels has been obtained with STM measurements
of Bi bilayers grown on Bi2Te3 thin films [67] and on Bi
crystals [70]. In a subsequent ARPES experiment on Bi
bilayers, however, very large Rashba spin-splitting was
observed in the edge states, suggesting a topologically-
trivial origin [71].
In spite of a lot of progress, most of these single-
element films have so far been grown on conducting
substrates, and thus are unsuitable for elucidating their
topological nature with transport studies. Recently,
Reis et al. [64] reported that honeycomb-structured Bi
monolayers can be epitaxially grown on insulating SiC
substrates. By using scanning tunneling spectroscopy
(STS) measurements, they observed an energy gap of
0.8 eV, and also obtained evidence for conducting edge
states. With help of the first principles calculations,
Reis et al.
claimed that the large gap arises from
covalent bonding between the Bi orbitals and the
substrate and it is topologically nontrivial [64]. If the
QSHE is confirmed in the future, this system will be
exceptionally attractive for exploiting the helical edge
transport at high temperatures.
An alternative approach to obtain 2D TIs is
to exfoliate layered compounds with strong spin-
orbit interaction, such as WTe2 [66, 72, 73, 74] and
ZrTe5 [65, 75, 76]. Following a theoretical prediction
of the 1T' phase of transition metal dichalcogenide
(TMDC) monolayers being 2D TIs [66], much work
has been done on WTe2 monolayers, the only member
of the MX2 family (M=W, Mo, and X=Te, Se, S)
in which the 1T' phase is energetically favored [72].
An ARPES experiment performed by Tang et al.
showed that WTe2 monolayer has a bulk energy gap
of 55 meV, much larger than those in HgTe/CdTe
and InAs/GaSb quantum wells. The existence of
edge channels in WTe2 monolayers has been confirmed
CONTENTS
10
for
lower
with the STM [72, 73], transport [74], and scanning
microwave impedance probe measurements [77]. More
recently, Wu et al. [78] reported the edge conductance
values consistent with the QSHE. In this experiment,
however, the observation of quantized edge transport
requires a spacing of 100 nm or
the
neighboring voltage probes in the devices based on
WTe2 monolayers. On the other hand, the edge
conductance varies very little for temperatures below
100 K. These features are quite different from those
of the HgTe/CdTe [46] and InAs/GaSb [55] quantum
wells,
in which the quantized edge conductance
is limited to liquid helium temperatures, but can
survive for the channel
lengths of the micrometer
scale.
It remains to be understood why the edge
conductance in WTe2 monolayers is so robust against
thermal agitation, but very demanding on the channel
In addition to WTe2, the layered compound
length.
ZrTe5 has also attracted a lot of
interest. This
can be attributed to its controversial topological
classification, very low carrier density, and high
carrier mobility [65, 75, 76, 79]. The latter features
make ZrTe5 particularly suitable for seeking exotic
quantum transport properties. Recently, Tang et al.
observed a 3D quantum Hall effect in ZrTe5 bulk
single crystals [79]. Although ZrTe5 can be easily
exfoliated down to nanometer thicknesses, transport
measurement of ZrTe5 monolayer, a 2D TI candidate
with a band gap of 0.1 eV [65], has not been reported
so far, probably due to the chemical instability of this
compound.
5. 3D Topological Insulators
The 3D counterpart of the 2D TIs can be characterized
by four Z2 indexes, {v0, (v1, v2, v3)}. This type of 3D
TIs are also protected by the time-reversal symmetry,
and can be divided into strong and weak 3D TIs,
corresponding to v0 = 1 and 0, respectively [80].
The latter can be regarded as a stack of 2D TIs and
therefore have gapless states on the side surfaces, while
the former does not have a 2D counterpart. The strong
3D TIs have so far received much more attention than
the weak 3D TIs.
In this review, we therefor solely
focus on the strong 3D TIs, and refer to them as 3D
TIs or TIs for brevity.
5.1. Early experiments on 3D TIs
Early experimental efforts on 3D TIs were mainly
focused on confirming the existence of the helical
surface states. ARPES measurements played a decisive
role in identifying 3D TIs [80, 81, 82]. Among them,
Bi1−xSbx is the first material confirmed to be a 3D
TI [83]. The electronic structure of Bi1−xSbx is,
however, very complicated due to the coexistence of
multiple bands in the surface states. This makes
Bi1−xSbx not suitable to be studied as a model 3D
TI system. Experimental attention was quickly shifted
to the compounds in tetradymite family (Bi2Se3,
Bi2Te3, Sb2Te3 and their derivatives), in which the
surface states are featured by a single Dirac cone,
accompanied by a large bulk band gap [83, 84, 85, 86]
(See Fig. 2). Among them, the binary compounds
(e.g. Bi2Se3) can be prepared in the form of bulk
single crystals, thin films, nanobelts or nanoplates,
but they tend to have a high density of defects,
and consequently the bulk remains conducting even
at liquid helium temperatures [82, 87]. Synthesis of
ternary or quaternary compounds turned out be an
effective approach to suppress the bulk conductivity.
One example is (Bi1−xSbx)2 Te3, in which the chemical
potential can be continuously tuned from the bulk
conduction band to the valence band by increase the
Sb concentration [88, 89]. This doping scheme is
based on the fact that undoped Bi2Te3 is often n-type
and Sb2Te3 is p-type. The other example exploiting
the compensation effect is (Bi1−xSbx)2 (Te1−ySey)3, in
which the composition control can increase the bulk
resistivity to the order of ohm·cm for single crystal
samples [90].
In addition to ARPES, STM was also used
Quasiparticle
extensively in the 3D TI studies.
interference experiments provided the evidence for the
suppression of backscattering [93, 94, 95], a property
arising from the spin-momentum locking (and π Berry
phase, see Section I, in the surface states. The Landau
level spectra obtained with STS measurements are
consistent with the linear dispersion of surface Dirac
fermions [96]. STM/STS measurements also produced
atomic scale information of various defects in 3D
TIs [97]. Such information is valuable for gaining in-
depth understanding of the physics of defect formation,
and thus offers new opportunities for further improving
the sample quality.
Additional evidence for the π Berry phase in the
surface states was also gained from the Shubnikov-
de Haas
The
longitudinal conductivity in high magnetic fields
satisfies
(SdH) oscillation measurements.
+
1
2 −
γ
2π
B )
2π
(16)
= SF
4π2
∆σxx ∝ cos
h
where BF = 1
e is the frequency of SdH
∆( 1
oscillations. Here, SF is the extremal area of the Fermi
spheroid perpendicular to the magnetic field B for a 3D
system (and in 2D, it is reduced to the area inside the
Fermi circle), and γ is the Berry's phase, which takes
a value of π for a TI surface and 0 for an ordinary
2D electron system. The γ value can be extracted
from the plot of Landau level index n as a function
2π , where Bn is the magnetic
of
, i.e. n = F
1
Bn
Bn − γ
(cid:20)
(cid:18) BF
B
(cid:19)(cid:21)
,
CONTENTS
11
Figure 2. Crystalline and electronic structures of the Bi2Se3 family of 3D TIs. (a) Crystal structure of Bi2Se3, which has a layered
structure of Van der Waals type, which can be separated in to quintuple layers (QLs) of Se-Bi-Se-Bi-Se. Each QL is about 1 nm
thick. (b,c) Band diagrams of Bi2Se3 (b) andBi2Te3 (c) given by first principles calculations. The gapless surface states are also
shown. (d,e) Band structures of Bi2Se3 (d) and Bi2Te3 (e) obtained with ARPES measurements. Adapted from Zhang et al., Nat.
Phys. 5, 438 (2009) [84]; Xia et al., Nat. Phys. 5, 398 (2009) [91]; Chen et al., 325, 178 (2009) [92].
field corresponding to the nth conductivity minimum.
SdH measurements performed on Bi2Se3, Bi2Te3 and
Bi2Te2Se single crystals yielded nontrivial values of
Berry's phase for the surface states [98, 99, 85, 86, 90].
However, caution has to be taken in order to avoid
inaccurate assignment of
longitudinal conductivity
minima [100], and to account for nonlinearity in the
energy-momentum relation due to broken particle-hole
symmetry, as well as the Zeeman effect. Nevertheless,
SdH measurements can provide valuable electronic
parameters relevant to the device applications, such as
the carrier concentration, effective mass, and quantum
lifetime.
5.2. Electronic properties of 3D TIs
5.2.1. Aharonov-Bohm effect The interplay between
the Aharonov-Bohm (AB) phase, the Berry's phase
and quantum confinement effect makes TI nanostruc-
tures very appealing for exploring novel mesoscopic
physics.
In 2009, Peng et al. observed that when a
magnetic field is applied parallel to the long axis of
Bi2Se3 nanowires, the conductance exhibits oscillations
with a period of h/e, with the maxima appearing at in-
teger multiples of the flux quantum (Φ0 = h/e) [101].
These features are in contrast to the Altshuler-Aronov-
Spivak oscillations [102] observed in hollow metallic
cylinders [103] and carbon nanotubes [104], in which
the interference between various time-reversed paths
leads to h/2e-periodicity oscillations for the diffusive
transport.
In the diffusive regime, the h/e-period
Aharonov-Bohm oscillations, which would be most pro-
nounced in a single ring-like structure, are expected to
be suppressed in a nanowire due to the ensemble av-
erage of various electron trajectories, which carry ran-
dom phase factors [105].
According to the theory reported in Refs. [106,
107],
the h/e oscillations observed in the TI
nanowires [101] can be regarded as a transport hall-
mark of the helical surface states in 3D TIs. The
π Berry's phase modifies the 1D quantization condi-
tion around the perimeter of nanowires, leading to a
gap opening at the Dirac point when the magnetic
flux through nanowire is even multiples of half-flux-
(cid:1), and a gapless 1D mode for odd
quantum (cid:0) Φ0
2 = h
2e
numbers of half-flux-quantum [106, 107]. In the ballis-
tic regime, this peculiar electronic structure results in
the h/e oscillations with conductance maxima (min-
ima) located at odd (even) multiples of Φ0/2. The
experimental data reported in Ref. [101], however, ex-
hibit the opposite behavior. This was explained by
Bardarson et al. [107], who considered the joint effects
of doping and disorder, and showed that for certain
disorder strengths, the conductance maximum can os-
cillate between the zero flux and half flux quantum
as the chemical potential varies. This phenomenon
was subsequently observed in Bi2Se3 nanowires by Jau-
regui et al. [108]. It was also predicted that both h/e
and h/2e oscillations can appear in TI nanowires and
their relative strength varies with increasing disorder
CONTENTS
12
Figure 3. AB/AAS oscillations in TI nanowires. (a) Schematic sketch of the measurement geometry, in which the current and
magnetic field are applied parallel to the long axis of the wire. (b) Scanning electron image of a Bi2Se3 nanowire with multiple
electrical contacts.
(d) Band
diagrams of a TI nanowire with zero (left) and half (right) flux quantum applied (i.e. φ = 0 and φ0). (e) Conductance fluctuations
in a Bi1.33Sb0.67Se3 nanowire in which the chemical potential is lowed by surface coating of F4-TCNQ molecules (strong acceptors)
and electrical back-gating. Panels (a-c) are taken from Peng et al., Nat. Mater. (2009) [101]; panel (d) from Bardarson et al., PRL
(2010) [107], and panel (e) from Cho et al., Nat. Commun. (2015) [110].
(c) Resistance fluctuations with h/e-period oscillations when a parallel magnetic field is applied.
strength [107]. This was confirmed by the transport
measurement of Se-encapsulated Bi2Se3 nanowires, in
which the disorder strength was controlled by inten-
tional aging of the samples [109].
tuned close to the Dirac point.
A direct observation of the 1D helical mode
in a TI nanowire, however, requires the chemical
potential
In
Ref. [110], the Fermi level in (Bi, Sb)2Se3 nanowires
was controlled by electrical gating and the surface
coating of acceptor-type molecules. The conductance
maxima at half flux-quantum (and minima at zero-
flux) appear to be consistent with the theory. Similar
conductance oscillations were also observed in a back-
gated Bi2Se3 nanowire sample [109], but the amplitude
of conductance oscillations was, however, one order
of magnitude lower than that observed in Ref. [110].
Therefore, it is desirable to further explore the helical
1D mode at half flux quantum in the samples with weak
disorder and low chemical potential. In this regime, the
variation in the longitudinal conductance is expected
to be close to e2/h as the magnetic flux is increased
from zero to Φ0/2 [107].
5.2.2. Weak antilocalisation Another method for
probing the surface transport is to utilize the weak
It can be understood
antilocalisation (WAL) effect.
in the following semiclassical picture.
low
temperatures, electrons can remain phase coherent
after many scattering events, namely lϕ (cid:29) le, where
lϕ the dephasing length, and le is the mean free path.
Since a pair of time-reversed paths for a closed electron
At
trajectory has exactly the same length, constructive
interference takes place for a particle with negligible
spin-orbit coupling. This leads to an increase in the
returning probability of the particle and hence decrease
in conductivity. For a Dirac fermion on the TI surface,
the spin-momentum locking introduces an additional
phase π between the pair of counterpropagating loops.
The consequence is the destructive interference and
the suppression of backscattering. This is known as
weak antilocalisation, an effect opposite to the weak
localisation [111, 112, 113].
The WAL effect has been observed frequently in
3D TIs [82].
It was, however, not easy to attribute
it to the helical surface states exclusively, due to
coexistence of parallel conduction channels, such as
the bulk layer [114, 115] and the surface accumulation
layer arising from downward band bending [116]. The
spin-orbit coupling strengths are also very strong in
these unwanted 2D channels, and they may belong
to the same symmetry class (symplectic metal) as
the helical surface states [111, 117]. Therefore, the
WAL correction to longitudinal conductivity in these
conducting channels can be described by the same
equation,
In
addition to the parallel conductivity, the coupling
between these channels
the surface-bulk
scatterings and inter-surface hybridization) further
complicates the analysis of the WAL effect in many
3D TI samples [118, 119]. Nevertheless, valuable
information on the surface states can still be obtained
by systematically tuning the chemical potential and
if they can be treated independently.
(e.g.
CONTENTS
13
Figure 4. Weak antilocalization effect in TI thin films. (a) Schematic sketch of helical 3D TI surface states, in which the spin-
momentum locking leads to a Berry's phase of π. (b) Destructive interference between a pair of time-reversed path due to the π
Berry's phase. (c) Sketch of the Hall-bar shaped Bi2Se3 thin film samples, in which the chemical potential is tuned with a back-gate
via the STO substrate as a high-kappa dielectric. (d) Sheet carrier density dependence of the prefactor alpha extracted from the
fits of magnetoconductivity data to the HLN equation. The α value remains close to 1/2 for a wide range of carrier densities (0.8 -
8.6×1013 cm−2), which correspond to Fermi levels located in the bulk conduction band (upper inset). (f) Gate-voltage dependence
of a Bi2Se3 sample, in which the α value can be tuned from about 1/2 to nearly 1, when the bulk carriers are depleted by applying
negative gate voltage. The upper and lower insets show the band diagrams for α = 1/2 and 1, respectively. Adapted from Chenet
al., Phys. Rev. Lett. 105, 176602 (2010); et al., Phys. Rev. B 83, 241304 (2011) [120]; Zhang et al., Adv. Func. Mater. 21, 2351
(2011) [121].
quantitatively analyzing of the transport data.
ln
− Ψ
B
(17)
(cid:20)
+
2
Bϕ
B
(cid:19)(cid:21)
(cid:18) Bϕ
(cid:19)
(cid:18) 1
A convenient method to unveil the WAL effect in
TIs is to measure the longitudinal resistivity in per-
pendicular magnetic fields. The magnetoconductiv-
ity can be described by the Hikami-Larkin-Nagaoka
(HLN) equation [111] simplified for the strong spin-
orbit coupling limit:
αe2
πh
σ(B) − σ(0) = −
in which Ψ is the digamma function, B is the magnetic
field, Bϕ is the dephasing field, lϕ is the dephasing
length. The value of prefactor α is dependent on
the number of conduction channels and the coupling
strengths between them. For instance, α = 1/2 if
only one channel contributes, and α = n/2 for n
independent and equivalent channels. In case of two
channels with non-negligible inter-channel coupling or
asymmetry in the dephasing lengths (i.e. lϕ,1 (cid:54)= lϕ,2), α
would take a value between 1/2 and 1 and the Bϕ value
would be determined by a complicated function of lϕ,1,
lϕ,2, and other transport parameters [118]. It is worth
noting that the HLN formula needs to be modified
to account for strong spin-orbit scattering expected in
topological materials [37, 38, 39].
Measurements of TI thin films or microflakes with
conducting bulk often yield α values close to 1/2.
This can be attributed to strong coupling between
the surface and bulk states, which makes the sample
behaving like a single channel system [118]. When
the bulk carriers are depleted by electrical gating
or reduced by appropriate doping, crossover from
α ∼ 1/2 to α ∼ 1 can be observed [120, 122,
123, 124, 125] (See Fig. 4 for an example). The α
value close to 1 is a signature of decoupling between
two conduction channels.
If the film is sufficiently
thin or the bulk carrier density is low enough, a
full depletion of bulk carriers can be achieved with
electrical gating. In this case, α = 1 would mean a pair
of equivalent surfaces decoupled to each other. Such
a transport regime is suitable for pursuing intrinsic
quantum transport properties of the helical surface
states. For instance, Liao et al.
found that the
electron dephasing rate has an anomalous sublinear
power-law temperature dependence in the (Bi, Sb)2Te3
thin films in the decoupled surface transport regime.
In contrast, when the same film is tuned to the
bulk conducting regime, the dephasing rate returns
to linear temperature dependence commonly seen in
conventional 2D electron systems. The coupling of
the surface states to charge puddles in the bulk was
proposed as a possible origin of the sublinear power
law [126].
CONTENTS
14
Figure 5. Observation of the quantum Hall effect in a 3D TI. (a) Gate-voltage dependence of longitudinal resistance of
(Bi,Sb)2(Te,Se)3 (BSTS) microflake, in which the chemical potential is tuned with a back gate via a 300 nm thick SiO2 layer.
(b) Longitudinal conductivity σxx and σxy plotted as functions of back-gate voltage in a magnetic field of B = 31 T applied
perpendicularly to the BSTS flake. Here the total Hall conductivity contains contributions from the top and bottom surfaces. The
top surface component remains quantized as 1
2 e2/h, while the bottom surface contribution can be tuned with the back-gate voltage.
Adapted from Xu et al., Nat. Phys. 10, 958 (2014) [127]
5.2.3. Quantum Hall effect The Dirac electrons on
the TI surface states can in principle exhibit half-
integer quantum Hall effect (QHE) due to the existence
of a zero-energy Landau level [80, 81]. Despite the
absence of spin or valley degeneracies in many 3D
TIs, direct observation of the half-integer quantum
Hall plateau has not been possible because both the
top and bottom surfaces contribute to transport. The
quantised Hall conductivity in a slab geometry can be
written as
σxy = σt +σb = (νt +νb)
e2
h
= (Nt +
1
2
+Nb +
1
2
)
e2
h
, (18)
where σH is the Hall conductivity, νi the filling factor,
and Ni the Landau level index of surface i, with i = t,
b. Here t and b denote the top and bottom surfaces,
respectively.
In a magnetic field of the order of 10
T, the carrier mobility of several thousand cm2/V·s
is usually sufficient for observing the QHE. Bismuth
chalcogenides with such mobilities were not difficult
to obtain even in early days of TI research [98]. The
failure in observing the QHE in TIs can be attributed
to the conducting bulk, which provides backscattering
paths for the chiral edge channels in the quantum Hall
regime.
The first observation of QHE in TIs was realized
in 2011 with a strained 70 nm thick HgTe epilayer with
electron mobility 3.4×104 cm2/V·s. Multiple quantum
Hall plateaus in σxy were observed but they were
accompanied substantial
longitudinal conductivities.
In 2014, two groups managed to observe the QHE
in bismuth chalcogenides. Xu et al. observed well-
defined quantum Hall plateau of the zeroth Landau
level at B > 15T and T = 0.35K using bottom-gated
microflakes exfoliated from (Bi, Sb)2 (Te, Se)3 single
crystals [127]. Yoshimi et al. utilized high quality
(Bi, Sb)2Te3 thin films grown in InP(111) substrates
and realized the σH = ±1e2/h plateaus in a magnetic
field of 14 T and at T = 40 mK [128]. Using a
sample with quality higher than those in Ref. [127]
and dual gating, Xu et al.
studied the zero Hall
state (with (νt, νb) = (−1/2, 1/2) or(cid:0) 1
(cid:1)) in detail.
2 ,− 1
2
Their joint local and nonlocal measurements suggest
the existence of a quasi-1D dissipative edge channel
with nearly temperature independent conductance for
T < 50 K [129].
The QHE has also been observed in ungated
Bi2Se3
thin films of both n-type and p-type.
Such observations represent a remarkable technical
achievement in reducing the density of defects in
Bi2Se3 by optimizing the MBE growth processes [130,
131]. It is also noteworthy that Zhang et al. recently
observed a well-defined quantum Hall νtot = 1 plateau
in an exfoliated Sn-doped (Bi, Sb)2 (Te, S)3 microflake
in magnetic fields less than 4 T at T = 6 K [132].
Further improvement in the quality of TIs may
enable observations of the fractional QHE and other
interaction-induced quantum phenomena.
Theoretical developments on exotic quantum Hall
physics in topological materials merit a brief mention.
In TIs, the half-quantised quantum Hall effect on
a single surface was addressed in [266], while the
Landau levels of thin films were recently discussed
in
[267]. The Hall plateaux fall into two patterns,
one pattern the filling number covers all
integers
while only odd integers in the other. The quantum
spin Hall effect, normally protected by time reversal
symmetry, is destroyed by the magnetic field together
with structure inversion asymmetry. Li et al
[268]
showed that in a MoS2 trilayer the Landau level
energies grow linearly with B, rather than with √B,
and display an unconventional Hall plateau sequence
consisting of odd negative integers and even positive
integers, with the crossover at n = 0. A spin-
resolved p − n junction also exhibits Landau levels at
CONTENTS
15
Figure 6. Planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a dual-gated (Bi,Sb)2Te3 thin film. (a) Hall
resistance Ryx and longitudinal resistance Rxx versus ϕ, the angle between the current and the in-plane magnetic field. (b) The
amplitude of PHE as a function of the strength of magnetic field. (c) PHE amplitude as a function of gate voltages, which are
symmetrically tuned (i.e. the top and bottom gate voltages remain equal). The upper right inset shows the Hall resistance curves
under various gate voltages. The change in chemical potential can be estimated from the gate-voltage dependence of the Hall
resistance (bottom curve and scale bar). Adapted from Taskin et al., Nat. Commun. 8, 1340 (2017) [143].
fractional filling factors. Later, it was shown that, at
low doping, TMDs under shear strain develop spin-
polarized Landau levels residing in different valleys,
with Landau level gaps between 10 and 100 K
[269]. A superlattice arising from a Moire pattern
can lead to topologically nontrivial subbands, with
edge transport quantised.
focused on
the (111) surface of SnTe in a quantising magnetic
field, predicting a nematic phase with spontaneously
broken C3 symmetry due to the competition between
intravalley Coulomb interactions that favor a valley-
polarised state and weaker intervalley scattering that
increases in strength as the magnetic field is ramped
up.
[270]
Ref.
5.2.4.
Planar Hall effect When a magnetic field
is applied parallel to the surface of a 3D TI, the
transport properties were once considered to be
unaffected because the Zeeman term can be gauged
way by shifting the Dirac cone in the momentum
space.
Taskin et al., however, observed that in
dual-gated devices of bulk-insulating (Bi, Sb)2Te3
thin films with dominating surface transport the
in-plane magnetic field can induce an anisotropic
magnetoresistance (AMR) and the planar Hall effect
(PHE) [133].
In contrast to the anomalous Hall
effect, the planar Hall effect consists of a resistivity
anisotropy induced by an in-plane magnetic field,
which anisotropically lifts the protection of surface
Dirac fermions from backscattering, in a configuration
in which the conventional Hall effect vanishes. Both
AMR and PHE are phenomenologically similar those
encountered in ferromagnetic materials. The former
exhibits an angular dependence of cos2 ϕ and the
latter is proportional to sin ϕ cos ϕ, where ϕ is the
angle between the magnetic field and the applied
current. The AMR and PHE are two aspects of the
same anisotropic scattering process in conventional
magnetic materials, and consequently they have the
same amplitude. Taskin et al. proposed a theoretical
model to account for these effects in 3D TIs. It is based
on the assumption that the in-plane magnetic field
breaks the time-reversal symmetry, and removes the
protection from backscattering for spins perpendicular
to the magnetic field, but at the same time maintains
the protection for spins parallel to the magnetic field.
This model can qualitatively reproduce the double-
dip structure of the AMR/PHE amplitude as function
of gate voltage. They estimated that about 10%
of impurity scatterings are related to spin flips at
B = 9 T [133]. The planar Hall effect can appear in
the presence of magnetic disorder in a TI/ferromagnet
structure when the external magnetic field is aligned
with the magnetisation orientation [134], as well as in
tunneling across a single ferromagnetic barrier on a
TI surface when the magnetisation has a component
along the bias direction [135]. Recently, the PHE
and AMR effects were observed in Sr0.06Bi2Se3 [136]
and Sn-doped (Bi, Sb)2 (Te, S)3 samples [137]. Nandy
et al.
developed a semiclassical Boltzmann theory
of the transport in Bi2Se3 and showed that the
nontrivial Berry phase of the bulk states can also
lead to the PHE, as well as negative longitudinal
magnetoresistance [138].
Certain contributions to
the planar Hall effect can be traced to the Berry
phase and orbital magnetic moment familiar from
semiclassical dynamics [139].
Similar phenomena
have been observed topological semimetals [140] and
discussed in the context of chiral anomaly [141, 138].
However, according to a recent theoretical study,
the negative longitudinal magnetoresistance is not
necessarily associated with the chiral anomaly [142].
CONTENTS
16
Figure 7. Topological magnetoelectric effect in Bi2Se3 thin films. (a) Sketch of the Faraday rotation measurement setup in the THz
regime. (b) Faraday rotation angle as a function of the frequency for severalBi2Se3 thin films with thicknesses of 6 to 12 quintuple
layers (QL). The dashed horizontal lines denote theoretical values expected from the magnetoelectric effect. The upper-right corner
shows the quantum Hall effect of a 8 QL thin film prepared in a similar condition. Adapted from Wu et al., Science 354, 1124
(2016) [146].
5.2.5.
Topological magnetoelectric effect In the
previous subsections we have been mainly concerned
with dc transport properties. The difference between
a 3D TI and an ordinary insulator can also be
manifested in their response to the electromagnetic
field. According to the topological field theory [144],
the Maxwell Lagrangian has an axion term α
4π2 θE·B, in
which α = e2
c is the fine structure constant, and θ = π
for a 3D TI. In contrast, θ takes a value of 0 for an
ordinary insulator. When the time-reversal symmetry
(TRS) is broken (by applying external magnetic field,
utilizing proximity effect of a magnetic insulator, or
magnetic doping, see Section 5.3.2), the axion term
leads to some interesting modifications in the Maxwell
equations, and hence the topological magnetoelectric
effect [144, 145]. This can be detected by optically
techniques, such as Faraday and Kerr rotations.
In
3D TIs, the Faraday and Kerr rotation angles are
quantized in units of the fine structure constant,
if
the Fermi level can be placed between the Landau
levels or inside the magnetic gap induced by exchange
interaction.
In the former case the Faraday rotation
angle follows tan θF = α(cid:0)Nt + 1
(cid:1) in a free-
2 + Nb + 1
2
standing TI film, while the latter is corresponding to a
quantum anomalous Hall insulator in which tan θF =
α.
The quantized Faraday rotation has been observed
with time-resolved terahertz (THz) spectroscopy by a
few groups [146, 147, 148]. Wu et al. used high quality
Bi2Se3 thin films grown on sapphire substrates and
capped with MoO3, in which the chemical potential is
as low as 30 meV even without gating. Fig. 7 shows
the Faraday rotation angles are close to the quantized
values expected for total Landau level filling factor
Nt + Nb = 1, 3, 4, and 6.
It is noteworthy that the
quantization of θF can be observed in magnetic fields
down to 5 T, much lower than B = 20 T required
for observation the QHE in similar films [146]. The
quantized Faraday rotation was demonstrated in a
strained HgTe thin film tuned with a Ru top gate
in high magnetic fields [147]. The THz spectroscopy
measurements of Cr-doped (Bi, Sb)Te3
thin films
showed that a material-independent scaling function of
θF and Kerr rotation angle θK approaches to the fine
structure constant as the dc Hall conductance increases
toward 1 e2/h [148].
5.3. Novel magnetism with 3D TIs
5.3.1. Breaking time-reversal symmetry in 3D TIs
Breaking TRS in 3D TIs are predicted to result in a
plethora of novel quantum phenomena, and many of
them have been realized in experiment. The surface
states with broken TRS can be described with the
following Hamiltonian
H = vF (kxσy − kyσx) + ∆σz,
(19)
in which the mass term ∆σz is introduced by the
exchange interaction. The mass term turns the gapless
surface states into a system with a gap of 2∆. The
broken TRS also modifies the spin texture of the
surface states. The electron spins are no longer locked
perpendicularly to the momentum. They rather form a
hedgehog-like spin texture in which the spin direction
is perpendicular to the TI surface at µ = ±∆ and
slowly evolves into the in-plane helical structure for
µ (cid:29) ∆. As a consequence, the Berry phase becomes
ϕ = π(1 − ∆/µ) if the Fermi level lies outside the
mass gap (µ > ∆). When the Fermi level is located
CONTENTS
17
(cid:0) 1
inside the gap, a topological invariant, known as the
Chern number C, can be defined by integration over
the Brillouin zone. For a slab-shaped sample, C =
±
surfaces contribute 1/2 to the total value, and the sign
of C is identical to that of ∆.
(cid:1) = ±1, in which both the top and bottom
2 + 1
2
The topologically nontrivial electronic structure
described above
can be manifested in electron
transport. If the Fermi level lies in the mass gap, the
quantum anomalous Hall effect (QAHE) occurs. The
Hall conductivity follows σxy = C e2
h , accompanied by
vanishing longitudinal conductivity (σxx = 0). Both
properties are the hallmarks of a Chern insulator, in
which either QAHE or QHE can be observed.
In
the latter, the Chern number is equal to the integer
filling factor of the Landau level, also known as the
TKNN number [149]. For a Chern insulator with
boundary, electron transport is carried by 1D ballistic
chiral edge states surrounding an insulating bulk. Such
transport is often called dissipationless because the
edge transport can be free from backscattering for
macroscopic distances.
It should be noted, however,
that energy dissipation cannot be completely avoided
in a Chern insulator. It takes place at the so-called hot
spots at the corners of source and drain contacts [150],
and the contact resistance is of the order 1
C
h
e2 .
level
(cid:17)3
(cid:16) ∆
When the Fermi
lies outside the mass
gap,
the bulk becomes conducting, and the Hall
conductivity is no longer quantized. Ado et al. [257]
considered all three sources of the anomalous Hall
(AH) conductivity, namely the intrinsic contribution,
skew scattering and side jump, and predicted that
for µ (cid:29) ∆. Lu et al. predicted that the
σxy ∝
variation of the Berry phase from ϕ = π at µ (cid:29) ∆
to ϕ = 0 at the edge of the mass gap (i.e. µ = ±∆)
can induce a crossover from the WAL to the weak
localisation [152].
µ
Two approaches have been widely explored to
open the mass gap in 3D TIs [153, 154]. One is to intro-
duce magnetic order by doping with transition metal
elements. The other is to utilize interfacial exchange
interactions in TI/magnetic insulator heterostructures.
In the following two subsections, we shall review the ex-
perimental progresses in these two directions, while the
subsequent subsection covers theoretical developments
in this field.
5.3.2. Magnetically doped 3D TIs Many transition
metal and rare earth elements have been used as
magnetic dopants to introduce ferromagnetic order in
3D TIs. Among them, Cr, V, Mn and Fe have received
most attention [155, 92, 156, 157, 158]. In particular,
Cr-doped (Bi, Sb)2Te3 (Cr-BST) thin films allowed for
the first experimental observation of the QAHE [157],
as shown in Fig. 8. Enormous experimental efforts have
Figure 8. Observation of the quantum anomalous Hall effect.
(a) Sketch of the backed-gated Cr-doped (Bi,Sb)2Te3 thin film.
The perpendicular magnetization induced by the Cr doping turns
the massless surface states into a massive, gapped 2D system.
(b) Qualitative chemical potential of longitudinal conductivity
(σxx) and Hall conductivity (σxy). Quantization of σxy can be
realized when the Fermi level is tuned into the exchange gap. (c)
Experimentally observed longitudinal resistivity (ρxx) and Hall
resistivity (ρxy) plotted as a function of the back-gate voltage.
(d) Hall resistivity as a function of applied magnetic field at
several gate voltages. Taken from Chang et al., Science 340,
167 (2013) [157].
since been made to optimize the MBE growth Cr-
BST thin films. However, observation of the QAHE
in Cr-BST thin films is still limited to temperatures
of a few hundred mK or lower, despite that the Curie
temperature is on the order of 10 K [153, 154]. This
can be attributed partially to the spatial fluctuations
in the Dirac mass gap. According to an STM study,
the local exchange gap in a Cr-BST thin film varies
from 9 meV to 51 meV due to fluctuations in the
local density of magnetic dopants [159].
In the first
observation of QAHE [160], the zero-field longitudinal
conductivity was about 0.1 e2
h even at T =30 mK and
the backscattering through the bulk states restricted
the accuracy of quantum anomalous Hall (QAH)
resistance to about 1% [160]. More precise QAHE was
later realized in V-doped Sb2Te3 thin films, in which
the QAH plateau reached a precision level of 0.02% at
T =25 mK [158]. Recently, two groups have managed to
observe QAH resistances with precision levels of 1 part
in 106 and 0.1 part in 106 in Cr-BST [161] and V-doped
(Bi, Sb)2Te3 (V-BST) [162] thin films, respectively.
A lot of efforts have also been devoted to
increasing the observation temperature of QAHE. One
method is to utilize the modulation doping technique
developed in semiconductor heterostructures [163].
Two ultrathin (Bi, Sb)2Te3 layers heavily doped with
Cr are placed 1 nm from the top and bottom surfaces
while the majority of the film is not magnetically
doped. The Hall resistance in this multilayer structure
reaches 0.97 h
e2 at T = 2 K. The other method is to
CONTENTS
18
use a co-doping scheme. The QAHE can be realized
at T =1.5 K in a Cr and V co-doped (Bi, Sb)2Te3
sample. It is believed that the increased homogeneity
is responsible for the realization of QAHE at higher
temperatures [164].
It was also shown that there is a large difference
in the coercive fields of Cr- and V-doped BST thin
films. This property was employed to realize the
axion insulator state [165, 166, 167],
in which the
magnetization directions of Cr-BST and V-BST layers
are opposite to each other, and the longitudinal
conductivity vanishes like an QAH insulator, but the
Hall conductivity displays a zero plateau. These
features are nearly perfectly borne out in the transport
data of a V-BST/BST/Cr-BST trilayer structure [165,
166]. The axion insulator phase can exist in a wide
range of magnetic fields (µ0H = 0.2 − 0.8T) at low
temperatures.
It is remarkable that the longitudinal
resistance can be as high as 1GΩ in this insulating
phase. Similar results are also reported in Ref. [167],
which shows the zero-plateau of the Hall resistance,
in addition to those of the longitudinal and Hall
conductivities.
In contrast to the Cr and V doping, experiments
with other magnetic dopants have been futile in
producing a well-defined QAH phase to date [92,
156, 168, 169, 170]. This was somewhat surprising
considering that sizable gap opening in the surface
states was observed in Fe-doped and Mn-doped Bi2Se3
thin films with ARPES measurements [92, 156].
In
a subsequent experiment, however, S´anchez-Barriga
et al.
showed that in Mn-doped Bi2Se3 thin films
the gap in the surface states, which can be as large
as 200 meV, survives at room temperature, in stark
contrast with the low Curie temperatures in the
sample (less than 10 K for both bulk and surface
magnetism) [171]. They suggested that this kind
of energy gap originates from nonmagnetic resonant
scatterings related to the impurities in the bulk,
instead of the magnetic exchange interaction [171].
Such nonmagnetic scatterings complicate the electronic
structure and are detrimental to realizing the QHAE.
Recently, Liu et al.
further showed that the AH
resistance in (Bi1−xMnx)2 Se3 thin film can have too
components with different signs, and the surface
component has a sign opposite to that of the QAH
phases in Cr- or V-doped BST films [172]. Similar sign
in the AH resistance was also observed in Mn-doped
Bi2 (Te2Se)3 [168], Mn-doped Bi2Te3 [173], and Cr-
doped Bi2Te3 [174, 175]. It remains to be investigated
whether such 'anomalous' sign in σxy is related to
the non-magnetic scatterings [176]. Nevertheless, the
results described above suggest that the influence of
magnetic dopants is far more complicated than the
mean field exchange interaction considered in the
massive Dirac fermion model. A deep understanding of
the impurity effect, both magnetic and non-magnetic,
are crucial to finding magnetic TIs with improved
quality.
is
surface states
5.3.3. Magnetic heterostructures Another approach
to open a gap in the TI
to
make use of the proximity effect in TI/magnetic
insulator (MI) heterostructures. Both ferromagnetic
and antiferromagnetic insulators with spin aligned
perpendicular to the surface are capable of generating
a mass gap via the exchange interaction across the
interface.
One advantage of the heterostructure
approach is that it may overcome the difficulty of
magnetic inhomogeneity encountered in magnetically
doped TIs [159].
This not only allows for the
observation of QAHE at high temperatures, but also
facilitates the study of exotic quasiparticles, such
as chiral Majorana zero modes [177, 178, 179] and
magnetic monopoles [144].
[183], BaFe12O19
[184], Cr2Ge2Te6
Many ferromagnetic or ferrimagnetic insulators,
including EuS [180, 181], GdN [182], Y3Fe5O12
(YIG)
[185],
Tm3Fe5O12 (TIG) [186], Fe3O4 [187], and CoFe2O4 [188],
have been used to fabricate the MI/TI heterostruc-
tures. Evidence for interfacial magnetic interactions
has been obtained by the measurements of the WAL
effect in perpendicular or parallel magnetic fields [180,
184], Kerr spectroscopy [183], and polarized neutron
reflectometry [189, 190]. However, the gap opening ef-
fect are very weak in most of these heterostructures,
as evidenced by the fact that the reported AH resis-
tances did not exceed several Ohms. Nevertheless, AH
resistances up to 120 Ω have been observed recently
in a (Bi, Sb)2(Te, Se)3/(Ga, Mn)As heterostructure, in
which the magnetic semiconductor layer is in an insu-
lating regime and has a perpendicular easy axis [191].
More recently, in a Cr2Ge2Te6/TI/Cr2Ge2T6 sandwich
structure AH resistances of the order kΩ has been
achieved [192]. It is noteworthy that in these two stud-
ies, both the TI and MI layers were fabricated with
MBE in ultrahigh vacuum. This suggests that high in-
terface quality is crucial in obtaining strong magnetic
proximity effect in the TI surface states.
The exchange interaction between antiferromag-
netic insulators and TIs may also open a sizable
gap in the surface states. Based on the first prin-
ciples calculations, the magnetic proximity effect in
MnSe/Bi2Se3 heterostructure can induce a gap of
about 54 meV [193]. Another theoretical study of
the same heterostructure, however, suggested that the
gap associated with the Dirac surface states is very
small (8.5 meV), and also coexists with trivial metallic
states [194]. An ARPES study of MnSe ultrathin lay-
ers grown on Bi2Se3 however, revealed an energy gap of
CONTENTS
19
100 meV, which is free of any other electronic states.
This surprising result is attributed to direct interac-
tion of the Dirac surface states with a Bi2MnSe4 septu-
ple (SL) layer (1 SL=Se-Bi-Se-Mn-Se-Bi-Se), which is
formed from the intercalation of a MnSe layer into the
quintuple layers of Bi2Se3. The calculation reported
in Ref. [195] also produces a Chern number C = −1,
indicating high temperature QAHE can in principle be
observed in this system. Very recently, exciting results
have been reported on a antiferromagnetic compound
in the same family, Bi2MnTe4. The first principles cal-
culations suggested that when Bi2MnTe4, which has
a layered structure, is exfoliated into ultrathin layers,
the ground state can oscillate between a QAH insulator
and an axion insulator phase, depending on whether
the number of Bi2MnTe4 septuple layers is odd or
even [196, 197]. It is remarkable that a quantized Hall
resistance was observed lately in a 5 SL microflake of
Bi2MnTe4 at T =4 K, although a high magnetic field
had to be applied to align the Mn2+ spins [198]. Fur-
ther work along this line may lead to the observation
of both QAHE and the axion insulator state in zero
magnetic field in stoichiometric materials. This might
pave a way for discovering novel quantum phenomena
as well as manipulate exotic quasiparticles for potential
applications.
5.3.4. Magnetic ordering in TIs:
theory Magnetic
order has a profound effect on charge transport
through a material. When a current passes through
a magnetised material topological mechanisms and
scattering processes predominantly deflect electrons in
one direction. This results in an additional current
perpendicular to the driving current, which depends
on the magnetisation, and vanishes if the material is
non-magnetic. Whereas the Hall effect of classical
physics requires an external magnetic field, this effect,
termed the anomalous Hall effect, requires only a
magnetisation.
It is often the smoking gun for
detecting magnetic order and remains one of the
biggest focus areas for research on TIs.
In ultra-
thin films of magnetic topological insulator a quantised
anomalous Hall effect (QAHE) exists, carried by edge
states believed to be topologically protected, with
a transverse conductivity of e2/h. The quantum
anomalous Hall effect is believed to be dissipationless
and is being investigated for electronics applications
[235].
Prior to discussing anomalous Hall effects, we
examine the critical aspect of magnetic ordering in TI,
which has been the subject of a number of papers. In
undoped TI the ordering was originally believed to be
due to the van Vleck mechanism [236] and to point
out of the plane, in contrast to thin film ferromagnets,
in which the magnetisation typically points in the
plane. This interpretation is being challenged, as we
shall see below.
Interestingly, Rosenberg and Franz
[237] showed that in a magnetically doped metallic
TI the surface magnetic ordering can persist up to
a higher critical temperature than the bulk, so that
a regime exists where the surface is magnetically
ordered but the bulk is not. This is believed to be
because the metallic surface state is more susceptible to
magnetic ordering than the insulating bulk. Magnetic
impurities were also shown to give rise to a Kondo
effect [238] and non-Fermi liquid behavior [239]. Even
in the absence of magnetism distinctive features
appear in the static spin response in 2D TIs for the
topologically nontrivial band-inverted structure [240].
Electronic correlations such as the Hubbard U affect
the ordering in ferromagnetically doped TI thin films,
as was seen in V-doped Sb2Te3 [241]. The on-site
Coulomb interaction can turn the TI thin film into a
Mott insulator and facilitate it entering the quantum
anomalous Hall phase, discussed below. Ferromagnetic
order is determined by p-orbital-assisted long-range
superexchange as well as short-range double-exchange
between the partially filled d-bands, which enhances it
relative to Cr doping.
In determining the highest possible observation
temperature of the QAHE the two important energy
scales are the band gap of the magnetic TI film, given
by the size of the magnetisation, and the ferromagnetic
Curie temperature. The smaller of the two defines the
observation temperature of the QAHE. Two interesting
publications have shed light on co-doping mechanisms
that can be used to enhance the temperature at
which the QAHE is observed, which are currently a
few tens of mK. Qi et al
[242] determined that the
QAHE can occur at high temperatures in n-p co-
doped TIs, taking as an example vanadium-iodine co-
doped Sb2Te3. The chosen dopants have a preference
for forming n-p pairs due to mutual electrostatic
attraction, thereby enhancing their solubility. While
doping with V alone would shrink the bulk gap, co-
doping with I restores it to its original value. Even
at 2% V and 1% I, the QAHE persists until 50K.
The authors ascribe this enhancement to the fact that
compensated n − p codoping preserves the intrinsic
band gap of the host material.
In a similar vein,
Kim et al showed that the QAHE temperature can
be enhanced significantly by Mo-Cr co-doping Sb2Te3
[243]. At the same time, these authors discovered that
the ferromagnetic order in Cr-doped Sb2Te3 survives
when the spin-orbit interaction is turned off, implying
that the magnetic order is not governed by the van
Vleck-type mechanism, which relies on nontrivial band
topology.
Since the system is an insulator for Cr
doping ≤ 10%, the RKKY mechanism can also be
discounted, while the surface states were found to
CONTENTS
20
spin polarisation, which can be detected in dc transport
by utilising ferromagnetic electrodes as the probe [201].
In a typical experiment a TI is placed on top of
a ferromagnet, a current is driven through the TI,
and the effect of the current on the magnetisation
of the ferromagnet is observed. For a large enough
current density the magnetisation may switch, and
for technological applications it is desirable to make
this critical current density as low as possible, with
operation ideally possible at room temperature.
The efficiency in the generation of SOT can be
characterized by a dimensionless parameter, η =
2e JS
, where Js is the spin current density and Jc is
Jc
the charge current density. ST-FMR measurements
have been carried out on many TI/ferromagnet
including Bi2Se3/NiFe [202, 203],
heterostructures,
Bi2Se3/CoFeB [204],
(Bi, Sb)2Te3/NiFe [205], and
Bi2Se3/YIG [206]. The extracted maximum value of
the charge-spin conversion efficiency η spreads from
about 0.4 to 3.5 for each of these systems. Even
though the η values are in general larger than those
of heavy metal/ferromagnet heterostructures [202],
they are two orders of magnitude smaller
than
that the values (η = 140 − 425) obtained by the
second harmonic measurements of the Hall voltages
in (Bi, Sb)2Te3/(Cr, Bi, Sb)2Te3 heterostructures [207].
Such a large discrepancy was resolved in Ref. [208], in
which the second harmonic Hall voltage is identified to
mainly originate from asymmetric magnon scattering,
instead of the contribution from the damping-like SOT
due to the current induced spin polarization.
ferromagnet/TI heterostructures,
Recently, SOT-induced magnetisation switching
room temperature in
has been demonstrated at
several
such as
CoTb/Bi2Se3 [210], a TI-ferrimagnet heterostructure
with perpendicular magnetic anisotropy, accompanied
by a large spin-Hall effect, NiFe/Bi2Se3 [211] due to the
spin polarisation induced in the topological insulator,
Bi1−xSbx/MnGa [212] with a sizable spin-Hall effect,
and BixSe1−x/CoFeB [209].
The current density
required for magnetic switching is often on the order of
105A/cm2, which is considerably lower than those for
heavy metals (e.g. 5.5 × 106A/cm2 for β − Ta [213]).
These experiments demonstrated the potential of the
TI-based magnetic random-access memory. However,
it should be noted that the ferromagnetic layer used
in these experiments are metallic and often have a
conductivity much larger (or least comparable to) that
of the TI layer. Substantial amount of energy is wasted
due to the current shunting by the ferromagnetic
layer. It would be very appealing to achieve efficient
current induced magnetization reversal in a magnetic
insulator.
The 2D materials will offer excellent
opportunities for fabricating TI/MI heterostructures
with higher efficiency in generating SOT, since a
Figure 9.
Room temperature current-induced magneti-
zation switching in ferromagnetic metal/TI heterostructure.
(a) Schematic of a BixSe1−x (4 nm)/Ta (0.5 nm)/CoFeB
(0.6 nm)/Gd (1.2 nm)/CoFeB (1.1 nm) stack used in the mea-
(b) Anomalous Hall resistance RAH as a function
surements.
of applied magnetic field.
(c,d) Current-induced switching of
the magnetization due to the spin-orbit torque generated by the
in-plane current in the BixSe1−x underlayer in the presence of
80 Oe (c) and −80 Oe (d) in-plane bias H-fields. From Mahendra
et al., Nat. Mater. 17, 800 (2018)[209].
be of secondary importance in magnetic ordering.
DFT calculations reveal that magnetic ordering arises
from long-range exchange interactions within quintuple
layers, mediated by directional bonds with Te by
certain sets of orbitals on the Cr and Sb atoms, in
a similar way to hydrogen local moments in graphene.
A Zeeman field can also be induced in a TI
via a magnetic proximity effect. Two studies from
the same group shed light on this process for a TI
on a ferromagnetic insulator [244] as well as for a
TI on an antiferromagnetic insulator [245], the latter
using analytics as well as density functional theory
in Bi2Se3/MnSe(111). A unified qualitative picture
emerges. Charge redistribution and mixing of orbitals
of the two materials cause drastic modifications of the
electronic structure near the interface. In addition to
the topological bound state an ordinary bound state
is present, which is gapped and spin polarised due to
hybridisation with the magnet. The two overlap in
space in such a way that the ordinary state mediates
indirect exchange coupling between the magnet and the
topological state, and the latter acquires a gap at the
Dirac point.
insulators
5.3.5. Spin-orbit torque Much of the recent interest
in topological
centred around the
phenomenon of spin-orbit torque [199, 200], which is
the Onsager reciprocal of charge pumping. The spin-
momentum locking in the TI surface states offers a
convenient and efficient means to electrically generate a
is
CONTENTS
21
number of 2D materials have been identified to
be magnetic insulators(semiconductors) [214], and
atomically sharped interface can be obtained handily
with van der Waals epitaxy.
surface
states
Two fundamental effects underpin spin-orbit
torques. One is the generation of a spin polarisation
of the surface states by an electrical current, or
magneto-electric effect [215, 216]. In a TI/ferromagnet
heterostructure the current-induced spin polarisation
in the
exerts a torque on the
ferromagnetic layer, which can be regarded as a TI
counterpart of the Rashba spin-orbit torque (SOT) in
heavy metal/ferromagnet heterostructures [217]. This
effect requires, at the very least, spatial
inversion
symmetry breaking, hence cannot originate from the
bulk of the TI. The second effect is the spin-Hall
effect, which, conversely, stems from the bulk of
the TI and is zero for the surface states. This
refers to a non-equilibrium spin current driven by
an electric field. The exact origin of the strong
torque observed in any one experiment, in particular
whether it stems from the spin-momentum locking
of the surface states or from spin-Hall currents in
the bulk,
In this context
Ref. [218] considered a TI/ferromagnet heterostructure
in which the Fermi energy was varied so that at
one extreme transport is entirely surface-dominated
while at the other it is entirely bulk-dominated, and
showed that the spin Hall torque remains small even
in the bulk-dominated regime. A current-induced spin
polarisation was observed in Bi2Se3 by performing spin
torque ferromagnetic magnetic resonance (ST-FMR)
experiments [202], where the spin polarisation is in
the plane. In a series of more recent experiments, the
current-induced spin polarisation in WTe2 was shown
to be out of the plane [219, 220].
tends to be unclear.
The current-induced spin polarisation has a simple
explanation. A steady-state current corresponds to a
net momentum, and since the spin of the surface states
is locked to the momentum, this automatically ensures
there is a net spin polarisation. This is quite general in
a topological insulator, as long as no warping terms are
present, and is valid for currents both longitudinal and
transverse to the applied electric field. Yet research is
beginning to emerge demonstrating that the dynamics
in the vicinity of the TI/ferromagnet interface are non-
trivial, and may be vital in understanding what is
measured experimentally. A numerical study of the
spin-orbit magneto-electric effect [221] showed that the
stead-state surface spin polarisation extends ≈ 2nm
into the bulk of the TI as a result of wave function
penetration into the bulk, as in Fig. 10. When the
hexagonal warping term ∝ λ is taken into account,
in addition to modifications to the conductivity [222],
an out of plane spin polarisation also emerges. A
Figure 10. Current-induced spin polarisation and spin texture,
adapted from [221]. (a) The arrangement of Bi and Se atoms in
a supercell of a Bi2Se3 thin film with a thickness of 5 quintuple
layers. The inset in panel (a) shows the Brillouin zone in the
kx − ky plane at kz = 0.
(b) The vector field of the non-
equilibrium spin polarisation S(r) within selected planes shown
in (a), generated by injection of an unpolarised charge current
along the x-axis. The planes 1 and 3 correspond to the top and
bottom metallic surfaces of the film, while plane 2 resides in the
bulk at a distance d ≈ 0.164 nm away from plane 1. (c) The
vector fields in (b) projected onto each of the selected planes in
(a). The real space grid of r points in panels (b) and (c) has
spacing ≈ 0.4A.
recent computational work considered a Bi2Se3/Co
bilayer [223] and demonstrated that the Co layer is
substantially modified to acquire spin-orbit properties
of Bi2Se3, so when current flows through the Co, a non-
equilibrium electronic spin density will be generated
that is noncollinear to the Co magnetisation.
An additional contribution to the spin polarisa-
tion, and therefore the spin-orbit torque, exists when a
TI or a 2D spin-orbit coupled semiconductor is placed
on a ferromagnet with magnetisation perpendicular to
the 2D plane. It has been termed intrinsic, meaning
it is due to the band structure, and it stems from the
fact that the magnetisation opens a gap in the spec-
trum of the TI/semiconductor. This contribution to
the spin polarisation is associated with the same term
in the charge conductivity that leads to the anoma-
lous Hall effect. In a 2D semiconductor with spin-orbit
coupling linear in momentum it is known that the in-
trinsic anomalous Hall conductivity is cancelled out by
scalar disorder when the vertex corrections are taken
into account [224], in analogy with cancellations oc-
curring in the spin-Hall effect [225]. Ado et al [226]
revealed that, as expected, for spin-independent disor-
der the same is true for the intrinsic spin-orbit torque,
and the only remaining torque is due to the current-
induced spin polarisation. We note that this cancella-
tion requires both spin-orbit split sub-bands to cross
the Fermi surface and does not apply to TI. Ref. [226]
also introduced a more physical representation which
allows the decomposition of the torques into a dissi-
(a)yzxBiSexy(b)(c)123kxkyΓMK CONTENTS
22
pationless component (field-like) invariant under time
reversal, and a dissipative component (damping-like)
that changes sign under time reversal. In a subsequent
work, Xiao and Niu [227] showed that the net result
for the intrinsic torque depends on the structure of the
disorder potential.
For a non-equilibrium spin polarisation S acting
In
on a magnetisation M the torque T ∝ M × S.
the magnetism literature spin torques are customarily
broken up into two components, one referred to as field-
like, and the other as damping-like or antidamping-like.
This nomenclature stems from the Landau-Lifshitz-
Gilbert equation,
in which the magnetic field term
M × H is responsible for precession and the Gilbert
term M × (M × H) for damping of the precessional
motion.
In the context of spin transfer torques
this nomenclature is justified, since the damping-like
torque is dissipative, while the field-like contribution is
dissipationless. This nomenclature has also permeated
the literature on spin-orbit torques, where the field-
like and anti-damping-like torques ∝ M × S and
∝ M × (M × S) respectively, where S is the current-
induced spin polarisation. As explained in [226] the
analogy is not exact and can be misleading. The
current-induced spin polarisation,
for example, has
different directions for Rashba and Dresselhaus spin
orbit coupling, yet is always dissipative, as it depends
on the scattering time τ . For a realistic structure both
the Rashba and Dresselhaus interactions tend to be
present and the direction of the current-induced spin
polarisation is unknown a-priori.
Fischer et al
[228] concentrated on heterostruc-
tures comprising either a TI on a ferromagnet or a TI
on a magnetically-doped TI. In both cases the mag-
netisation was taken to be in the plane. In addition
to the current-induced spin polarisation, an additional
out-of-plane torque was found, arising from spin diffu-
sion across the interface combined with spin precession
of the current-induced spin polarisation around the in-
plane magnetisation. The two have different transfor-
mation properties under magnetisation reversal. For a
TI on a ferromagnet both torques have comparable effi-
ciencies, while for a TI on a magnetically doped TI the
spin transfer-like torque is found to dominate. Within
a similar setup, differences between the single Fermi
surface Rashba-Dirac Hamiltonian and two Fermi sur-
face Rashba Hamiltonian are considered [229].
A series of papers have reported drastic enhance-
ments of spin-orbit related effects in hybrid graphene-
TI structures. In Ref. [230] it is reported that epitax-
ial graphene on the TI Sb2Te3 evolves into the quan-
tum spin-Hall phase and develops a spin-orbit gap of
20 meV. Another paper [231] reports the possibility
that the addition of graphene monolayers or bilayers
to a TI-based magnetic structure greatly enhances the
current-induced spin polarisation by a factor of up to
100, due to the high mobility of graphene and to the
fact that graphene very effectively screens charge im-
purities, which are the dominant source of disorder
in topological insulators. Zhang et al computed the
spin-transfer torque in graphene-based TI heterostruc-
tures [232], induced by the helical spin-polarized cur-
rent in the TI, which acts as a quantum spin Hall insu-
lator. The torque was found to have a similar magni-
tude to ferromagnetic/normal/ferromagnetic graphene
junctions, and to be immune to changes in geometry. A
more recent work studied the spin proximity effect in
graphene/TI heterostructures [233], predicting a siz-
able anisotropy in the spin lifetime in the graphene
layer. Finally, when the spin-orbit coupling is siz-
able, the current-induced spin polarisation and spin-
Hall effect drastically alter the non-local resistance of
graphene [234], which can become negative and os-
cillate with distance, even in the absence of a mag-
netic field. Even though the results were derived for
adatom-functionalised graphene, they are expected to
apply generally to 2D systems exhibiting both current-
induced spin polarisations and spin-Hall transport.
Anomalous Hall effects The
5.3.6.
controversy
surrounding the origins of the anomalous Hall effect
go back nearly seventy years [246].
Three main
contributions have been identified, one of which is
intrinsic and is now known to be related to the Berry
curvature of Bloch electrons.
It is associated with a
deflection of particle trajectories under the action of
the spin-orbit interaction in the band structure of the
material, and was shown to be important in TI and TI
thin films [247, 248] as well as in longitudinal transport
in the presence of a magnetic field [249]. The other
two are termed skew scattering and side jump, and
are extrinsic, meaning they depend on the disorder
configuration. Skew scattering refers to asymmetric
scattering of up and down spins, while side jump
represents a transverse shift in the wave-packet centre
of mass in the course of scattering, also asymmetric
between spin up and spin down.
Skew scattering
and side-jump were originally introduced for an
electron with a scalar dispersion scattering off a spin-
dependent potential, and were much later generalised
to spin-dependent dispersions in the presence of scalar
potentials. The complex interplay of spin-dependent
dispersions and spin-dependent scattering potentials
has been addressed in a small number of papers [250,
251, 37, 39, 38], while the subtle debate surrounding
the side-jump in particular is covered extensively in
Ref.
It should be noted that the intrinsic
contribution also has a disorder correction, which in the
Kubo formalism includes the ladder diagrams [224] and
in the density matrix formalism involves an additional
[246].
CONTENTS
23
driving term [28]. This is simply a reflection of the
fact that (i) the non-equilibrium correction to the
density matrix is an expansion in powers of the disorder
strength ni and (ii) the leading term in the expansion
, since it is linear in the transport scattering
is ∝ n
time that is needed to keep the Fermi surface near
equilibrium. The next-to-leading term is thus of order
n(0)
i
−1
i
.
Efforts to identify topological systems exhibiting
a quantised anomalous Hall effect continue. Thin-film
topological crystalline insulators with ferromagneti-
cally ordered dopants can support quantum anoma-
lous Hall phases with Chern numbers between -4 and 4
[252]. The QAHE can be induced by an in-plane mag-
netisation in atomic crystal layers of group-V elements
with a buckled honeycomb lattice according to [253].
For weak and strong spin-orbit couplings, the systems
harbor QAHEs with Chern numbers of C=±1 and ±2,
respectively, which could be observable at room tem-
perature. Very recently, a new material entered the
topological insulator stage, when a topological phase
transition tuned by an electric field was demonstrated
in ultrathin Na3Bi [10], with an accompanying quan-
tum spin-Hall effect. Very recently a QAHE at a rel-
atively high temperature was reported in a flat-band
twisted bilayer graphene sample [254] in which strong
correlations result in the system to choosing a single
valley and well-defined spin orientation.
the bottom of
The conductivity of TIs doped with magnetic
impurities has been the subject of several papers.
In TI the situation is somewhat different depending
on whether the surface states are metallic or not,
due to the presence of Berry curvature monopoles
of opposite polarities at the top of the valence band
and the bottom of the conduction band. When
the chemical potential
is in the gap one expects
one TI surface to contribute e2/h to the anomalous
Hall conductivity. As soon as the chemical potential
passes
the conduction band this
topological contribution is cancelled by the monopole
in the conduction band. What remains is the
Fermi surface contribution, which depends on the
magnetisation and on the disorder profile. Ref. [255]
showed that the surface conductivity of magnetic
TIs is anisotropic, and strongly depends both on
the direction of the spins of magnetic impurities
and on the magnitude of the bulk magnetization.
It reaches a minimum when the spin of surface
impurities are aligned perpendicular to the surface of
TI, because the backscattering probability is enhanced
due to the magnetic torque exerted by impurities
on the surface electrons. Moreover, Zarezad et al
demonstrated numerically that randomly distributed
magnetic clusters with temperature-dependent mean
sizes are liable to form on the surface of the TI [256].
Figure 11. Anomalous conductivity calculated in the standard
non-crossing approximation (σnc
xy, dashed line), and including the
contribution of the crossed diagrams (σxy, solid line), adapted
from [257].
The anisotropic magnetoresistance depends strongly
on the spin directions of the magnetic clusters, in a
very different way from the case of non-interacting
impurities.
Undoubtedly one of the biggest revelations in
this field has been the fact that diagrams with
two intersecting disorder lines, an inherent part of
skew scattering on pairs of closely located defects,
influences the anomalous Hall effect substantially
and reduces the Fermi surface contribution at high
densities [257], as shown in Fig. 11. Going beyond
the ladder approximation is therefore imperative,
and subsequent works also showed that the disorder
potential correlation length modifies the result [258], as
well as spin-charge correlations in the disorder profile
[176].
example,
Hall transport has also been investigated under
A dynamical Hall effect,
optical driving fields.
for
can be driven by a strong a.c.
electromagnetic field as seen in [259] for light of subgap
frequency near the absorption edge in a magnetically
doped TI. Although the light is off-resonance, in the
strong-field regime there is always a finite electron
population in the conduction band due to nonlinear
effects. A similar analysis was performed on the
quantum anomalous Hall effect in intense fields [260],
where the Hall conductivity was shown to remain
close to e2/(2h) at low fields and low frequencies.
At strong fields, the half quantisation is destroyed
and the dynamical Hall conductivity displays coherent
oscillations as a function of field strength due to
the formation of Floquet sub-bands and associated
transitions between them.
A topic gaining currency at the interface between
topological materials and magnetism is the interplay
of skyrmions with TI surface physics.
Skyrmions
24681012140.00.20.40.60.8−σxy[e2/h]ǫ/mσxyσncxy CONTENTS
24
in which the spin at
are topological magnetic excitations with particle-
like properties,
the core
and the spin at the perimeter point in opposite
directions. They result from the competition between
the Dzyaloshinskii-Moriya interactions and exchange
interactions, and give rise to a nonzero Berry curvature
in real space. This is associated with an emergent
magnetic field, which deflects conduction electrons
and causes a topological Hall effect. Skyrmions on
TI surfaces provide the opportunity to examine the
interplay of real-space and momentum-space Berry
In general skyrmion effects cannot be
curvatures.
features are
treated perturbatively as topological
missed in such approaches.
Araki and Nomura
combined a non-perturbative solution to the scattering
of massless Dirac fermions with the Boltzmann
equation, demonstrating analytically that skyrmions
contribute to the anomalous Hall conductivity [261]
because at the skyrmion boundary Dirac electrons
acquire a phase factor that is absent in the dynamics
of Schrodinger electrons. The essential
ingredient
is the sign change in the out-of-plane magnetic
texture between the centre of the skyrmion and the
boundary, since in the skyrmion model considered
the Berry curvature is zero. Scattering of massive
Dirac fermions by a skyrmion in a TI/ferromagnet
structure was the subject of a concomitant numerical
investigation [262], which concentrated on its effect
on the longitudinal conductance.
Under certain
circumstances the electrical signal due to the skyrmion
may be distinguishable from the uniform ferromagnetic
background.
A concerted effort is being directed towards the
understanding of magnonic effects in magnetic TI
heterostructures. These include the spin-Seebeck ef-
fect, a voltage signal
induced in a metallic system
by thermally driven spin currents in adjacent mag-
netic systems, which was examined in the vicinity of a
TI/ferromagnetic insulator interface [263]. In this sys-
tem the spin-Seebeck effect is induced by surface elec-
trons scattering off the nonequilibrium magnon popu-
lation at the surface of the thermally driven ferromag-
netic insulator. Similarly, [264] identified magnon-drag
thermoelectric effects stemming from the electromotive
force induced by magnons and a thermoelectric ana-
logue of the anisotropic magnetoresistance. Yasuda et
al report a large unidirectional magnetoresistance in TI
heterostructures [265], which is attributed to asymmet-
ric scattering of electrons by magnons. Its large mag-
nitude is due to spin-momentum locking and a small
Fermi wave number at the TI surface, and is expected
to be maximized around the Dirac point.
5.3.7. Topological protection Topological protection
in TI has preoccupied researchers for over a decade.
It is variously understood to mean: (i) that the topo-
logical surface states are protected against Anderson
localisation due to the fact that backscattering is for-
bidden; (ii) that the topological surface states cannot
be eliminated by any time-reversal preserving pertur-
bation; (iii) that the edge states in TIs are topologically
protected. Whereas (i) and (ii) are widely accepted we
stress that (i) does not imply high mobilities can be
achieved in TIs, as was believed for some time, since
carriers can scatter through any angle other than π,
and in fact TIs continue to have very poor mobilities.
The controversy surrounding (iii) affects the QAHE
and QSHE and is especially relevant in light of the
experimental observation that quantised conductance
occurs in very short channels, of a few hundred nm.
To begin with,
A series of studies have challenged the universality
of
topological protection.
the
topological surface states themselves are sensitive to
the type of metallic contacts placed on the TI, as
demonstrated by ab initio calculations of Bi2Se3 [271].
These reveal that Au and graphene leave the spin-
momentum locking mostly unaltered, while Ni, Pd,
and Pt strongly hybridise with the TI and relax spin-
momentum locking.
Size quantisation effects also
influence the topological properties [272]. Interestingly,
the edge itself may experience spontaneous time-
reversal symmetry breaking due to edge reconstruction
when a smooth potential is considered, rather than
the infinitely sharp theoretical approximation [273],
as
to
mimic the positive-charge distribution on the gate.
If this falls smoothly to zero near the edge, the
electron density will mimic this by separating the
each giving rise to a decrease in
edge modes,
density.
Since the edge modes have opposite
chiralities, time reversal symmetry is spontaneously
broken.
In this case backscattering is enabled and
the conductance quantisation of the quantum spin-Hall
effect is consequently destroyed, while a spontaneous
anomalous Hall effect appears at zero magnetic field.
The electron density seeks
in Fig. 12.
Much of the discussion centres on the effect of
impurities on edge state transport. Tanaka et al
examined the effect on the conductance of a quantum
spin-Hall device of a magnetic impurity, which can
backscatter an electron from one edge state to the
other [274].
If the Kondo exchange is taken to
be isotropic, so that the total spin of the electrons
and impurities is conserved, and all electrons moving
in the same direction are taken to have the same
spin, the correction to the conductance due to this
impurity vanishes in the dc limit,
in contradiction
Anisotropic exchange
to an earlier paper [275].
introduces corrections that can be sizable above the
Kondo temperature, but are suppressed as T → 0.
The treatment was generalised by Altshuler et al,
CONTENTS
25
interactions, short-range nonmagnetic impurities act as
noncollinear magnetic scatterers, which enable strong
backscattering and cause deviations from quantisation
even at zero temperature [279].
Due to fluctuations in the donor density, doping
TIs tends to create a non-uniform potential landscape
consisting of electron and hole puddles, especially
It is natural to ask
dangerous at small energies.
what effect these have on edge transport.
In [280] a
puddle is modeled by a quantum dot, coupled to the
helical edge states by tunnelling, and quantum dots
with even numbers of electrons are considered. Elastic
processes involving electron dwelling in the dot do not
lead to any backscattering. Yet inelastic backscattering
processes are enhanced by electron dwelling in the dot
by increasing the time electrons interact with each
other. At temperatures lower than the quantum dot
energy spacings, the conductance correction depends
strongly on the position of the Fermi
level with
respect to the dot energy levels. The enhancement
of the resistance is much stronger for dots with an
odd number of electrons, due to the Kondo effect
[281], but the corresponding temperature dependence
is relatively weak. Indeed, current experiments see no
signature of Kondo transport [282].
6. Valley-dependent phenomena
Whereas TMDs have a massive Dirac spectrum, unlike
TIs, this describes a lattice pseudospin degree of
freedom rather than an angular momentum stemming
from the real spin. Nevertheless, TMDs have two
degenerate valleys, which are related by time reversal,
so that the masses in the two valleys have opposite
signs. Unlike graphene they typically have sizable spin-
orbit interactions. Large spin splittings were identified
in the conduction band of TMD monolayers in [283],
while the MoS2-WS2 heterojunction was shown to
have an optically active band gap [284] with the
lowest energy electron-hole pairs spatially separated
and living in different layers. The spin-orbit interaction
has a noticeable effect on the optical conductivity
[285, 286].
Given that the spin is essentially locked to the
valleys it is not clear that the two can be manipulated
independently, yet accessing the elusive valley degree of
freedom is fascinating from a fundamental standpoint.
The massive Dirac spectrum gives rise to the possibility
of manipulating the valley degree of freedom. For
example, the analogue of the anomalous Hall effect
in doped TMD monolayers is the valley Hall effect,
which has been detected in MoS2 [287] and has
generated considerable excitement.
Physically it
corresponds to an anomalous Hall effect with different
signs for different valleys. There is no net charge
Figure 12.
Edge reconstruction and topological protection,
adapted from from [273]. Panels (a) -- (c) describe the schematics
of the results for three different distributions of the confining
positive charge (light orange), characterised by w, the length
scale over which it decays to zero. The edge modes are marked
by broken blue (spin up) and solid red (spin down) lines. Panels
(d) -- (f) depict the occupations of the electronic states, using
the Hartree-Fock approximation, demonstrating a single drop
in density for a sharp edge ( w = 0) in (d), spin separation
for smoother edge ( w = 5) in (e), and an even smoother edge
( w = 20) in (f). Y denotes the position of state, in units of the
effective magnetic length; Y = 0 is the center of the density drop.
Panels (g) and (h) depict the same distributions as in (d) and (f),
respectively, using exact diagonalisation. Panel (i) depicts the
edge spin magnetisation as a function of the slope of the positive-
charge density, suggesting a continuous phase transition.
who considered scattering by a disordered chain of
Kondo impurities [276]. As the authors point out, in
disordered systems with strong spin-orbit interactions
it is unlikely that any component of the total spin
is conserved. When this is taken into account,
backscattering processes emerge that persist down to
absolute zero. The edge electrons experience Anderson
localisation for an arbitrarily weak anisotropy in the
coupling to the spin impurities provided the sample
is long enough. Interactions between electrons cannot
destroy the localisation, unless they happen to be
strongly attractive.
Black-Schaffer and Nazarov focused on the
coupling between surface and bulk states in the
presence of strong non-magnetic potential impurities,
which create localised resonances appearing at ever
lower energies as the impurity strength is increased
[277]. At large strengths the resonance goes through
the Dirac point, causing two Dirac points to emerge
on both sides of the resonance. Both the surface
states and the resonances penetrate approximately 10
layers into the sample, enabling second-order bulk-
assisted scattering processes, which act to destroy the
topological protection. Coupling between the edges
and the bulk was investigated from a different angle
in a subsequent paper [278], where edge and bulk
states were considered to be at the same Fermi energy.
In this case backscattering between the two leads to
Anderson localisation of both edge and bulk states.
Finally, in the presence of even weak electron-electron
Occupation, Hartree-Fockabc-2.5 -1.2 0 1.2 2.5defgh-10 -7.5 -5 -2.5 0 2.5 5 7.5 10iOccupation, Hartree-FockOccupation, Hartree-FockOccupation, Exact diagonalizationHartree Fock-15 -10 -5 0 50.61.00.20.40.81.0YY-15 -10 -5 0 50.61.00.20.40.81.0Y< S >101468122400 2 4 6 8 10 12 14 exact diagonalizationYYww = 5w = 20Z CONTENTS
26
current, because the anomalous Hall currents from
the two valleys cancel each other out, but electrons
from different valleys flow to different sides of the
sample generating a valley polarisation, which can be
detected using circularly polarized light.
In bilayer
MoS2 this was shown to be controllable electrically
using a top gate voltage, which breaks the inversion
symmetry of the bilayer [288].
The valley Hall
effect generates a non-local resistance, which has a
non-trivial dependence on the longitudinal resistivity,
weakening at large valley Hall angles [289], where the
valley Hall angle is determined by the ratio of the
valley Hall conductivity and the longitudinal charge
conductivity.
Because the valleys are spin polarised the valley
Hall effect is typically accompanied by a spin-Hall
effect [290, 291], valley currents tend to be spin-
polarised [292], and spin and valley polarisations
are generated concomitantly, although they can be
distinguished at high magnetic fields [293]. Likewise,
spin and valley noise are
coupled [294], with
fluctuations in the Faraday rotation signal being
connected to the valley degree of freedom as well as to
the spin, a fact that is ascribed to intervalley scattering
processes. Again, given that spin noise is sensitive to
an applied magnetic field, spin and valley dynamics
may be distinguished in certain regimes. On a similar
note, TMDs also exhibit strong hyperfine interactions,
which can create a feedback mechanism in which
spin-valley currents generate significant dynamical
nuclear polarization which in turn Zeeman shifts
excitonic transitions out of resonance with an optical
driving field, saturating the production of spin-valley
polarisation [295].
Similar findings have been reported theoretically
in Bi monolayers Bi2XY, where X,Y ∈ {H, F, Cl,
Br, or I} [296], where a staggered exchange field
is introduced by doping with transition-metal atoms
or by magnetic substrates.
Unsurprisingly these
findings have stimulated a lot of activity in optics [297,
298], and various schemes have also been proposed
for controlling and enhancing the spin and valley
polarisations and currents by employing electric and
magnetic fields [293, 299] and optical techniques [300].
A half-quantised valley Hall effect has been
predicted when the chemical potential lies in the mass
gap, driven by the same Berry curvature mechanism as
the quantised anomalous Hall effect in TIs [301]. By
mapping the system onto the Landau-Zener problem,
the authors argue this response is dominated by bulk
currents arising from states just beneath the gap
rather than by edge modes, as the latter are not
topologically protected, as in TI, and may be absent.
The potential gradient due to the external electric field
divides the system into three regions, of which the
middle region is gapped and the surrounding regions
have carriers in the conduction and valence bands
respectively. Upon reflection from the central gapped
region carriers are believed to experience side jumps
leading to a Hall effect. A dissipationless response is
found even when topologically protected edge modes
are absent, and is independent of the gap size. To date
this claim remains unverified experimentally. In TMD
bilayers the situation is somewhat different [302]. The
Berry curvature has sizable contributions from both
the intralayer and the interlayer couplings, the latter
leading to a dependence on the stacking configuration
and enabling tunability in double gated devices. The
valley and spin Hall conductivities are not quantised,
but can change sign as a function of the gate electric
field. Structures that may host topologically protected
states supporting persistent spin or valley currents
include interfaces where the Dirac mass changes sign
in 2D Dirac materials with spin-orbit coupling [303].
In this case the topologically protected states are so-
called Jackiw-Rebbi modes with a linear dispersion,
supporting spin and valley currents parallel to the
interface.
Whereas the valley Hall effect has been responsible
for the bulk of transport research on TMDs, magneto-
transport has begun to attract attention. Seeing as
the valley pseudospin and the magnetic field are both
odd under time reversal one may expect magneto-
transport phenomena without a counterpart in single-
valley systems. Sekine and MacDonald demonstrated
that the interplay between the Berry curvature, a
perpendicular magnetic field, and disorder scattering
in TMD monolayers gives rise to a longitudinal
magnetoconductivity contribution that is odd in the
valley pseudospin and odd in the magnetic field [304].
For this contribution to be visible a valley polarisation
must exist in the system. The dependence of the
magnetoresistance on the magnetic field changes from
quadratic to linear when a finite valley polarisation is
induced by optical pumping.
7. Probing Fermi arcs in Weyl semimetals
Weyl semimetals harbor unusual surface states known
as Fermi arcs, with each arc connecting the surface
projections of two Weyl nodes of opposite chirality,
as shown in Fig 13. For a basic understanding their
dispersion can be approximated as linear and, as shown
in [9], for a surface in the xy-plane may be written as
εk = ±vky, where v is the magnitude of the velocity,
and the line connecting the two Weyl nodes is (cid:107) kx.
The Fermi arc states exist for −k0 ≤ kx ≤ k0, where
±k0 represent the locations of the Weyl nodes. Note
that: (i) the two Fermi arcs are only degenerate at εk =
0; (ii) Fermi arcs on opposite surfaces have opposite
CONTENTS
27
are gapless and the rare states are only quasilocalised.
This coupling is non-perturbative and gives the arcs
spectral weight in the bulk so that they are no longer
bound to the surface and may no longer be said to
be topologically protected even for weak disorder. In-
terestingly, the surface chiral velocity persists even for
strong disorder, making the Fermi arc visible in spec-
troscopic measurements. Experimentally, quasiparticle
scattering and interference was imaged on the surface
of the WSM TaAs [307], providing spectroscopic evi-
dence of Fermi arc states. Nevertheless, the scatter-
ing wave vectors observed experimentally are consis-
tent with theoretical predictions that assume particle
propagation through the bulk of the sample in addi-
tion to propagation on the surfaces. Indeed, aside from
hybridisation with rare states, the connection between
surface and bulk provided by the Fermi arcs has highly
non-trivial consequences not only for scattering and in-
terference, but also for transport.
To begin with, scattering of electrons between
the surface and bulk states caused by inhomogeneities
introduces dissipation in Fermi arc transport [308]. In
a 1D description that neglects surface-bulk coupling,
quenched disorder effects result in a single phase
factor that is odd under exchange of spatial variables.
Consequently, disorder effects disappear from the
current-current correlation function, which would
imply a dissipationless
conductivity.
Disorder averaging, however,
is still responsible for
the finite width of the surface states, without which
the longitudinal conductivity would diverge. The
authors of [308] show rigorously, however, that an
impurity scatters surface waves into the bulk, resulting
in dephasing of the Fermi arc states and dissipation.
The deeper conclusion is that generically an effective
theory of surface states in the presence of disorder is
not well-defined for gapless systems.
longitudinal
The geometry of the Fermi arc dispersion is also
important [309]. A straight arc eliminates the impact
of electron-phonon scattering on surface transport
because scattering only occurs between states with
the same velocity along the direction of the current.
Scattering off surface disorder is also suppressed in this
geometry, such that for strong disorder a straight arc
yields a surface conductivity 1-2 orders of magnitude
larger than a TI. This is traced to the different
hybridisation strengths between surface and bulk in
WSMs and TIs.
In the absence of a magnetic field Fermi arcs
may alter the anomalous Hall response of WSMs by
introducing a residual contribution, with the result
depending on the degree of tilting of the arcs on
opposite surfaces [310]. In an external magnetic field it
emerges [311] that closed orbits can be formed in which
Fermi arc states on opposite surfaces are connected by
Figure 13.
Schematic of the Fermi arcs on opposite WSM
surfaces, adapted from [9]. (a) Top surface (b) Bottom surface.
The red (blue) points are the gapless points, which have positive
(negative) monopole charges for the Berry curvature.
velocities; and (iii) in contrast to TI surface states,
Fermi arc states are open, effectively disjoint segments
of a 2D Fermi surface, connecting the Fermi surfaces for
carriers with opposite chiralities that otherwise appear
to be disconnected. As the system evolves from a Weyl
semimetal to a TI with decreasing thickness, the arcs
on opposite surfaces merge into a surface Dirac cone [9].
In a similar manner to TI surface states, Fermi arc wave
functions in real space extend into the material. If the
sample is very thin, in analogy with a TI thin film, the
wave functions corresponding to the Fermi arcs on the
top and bottom surfaces overlap significantly, which
enables back scattering between certain pockets of the
Brillouin zone. This is expected to enhances Friedel
oscillations, as seen in the local density of states [305].
Since Fermi arcs couple points in the Brillouin
zone with opposite Berry curvatures, it has been be-
lieved that their existence is topologically protected.
Recent studies however cast doubt on this belief, and
to date it remains an open question. For example, Wil-
son et al [306] argue that Fermi arc states in WSMs
hybridise with Lifshitz rare states in the bulk to a much
greater degree than TI surface states, since the latter
exist in the bulk gap and are localised whereas WSMs
CONTENTS
28
trajectories that traverse the bulk of the sample. As a
result quantum oscillations in e.g. the density of states
can be observed in magnetic fields up to a critical value,
given by the thickness of the sample. Following the
prediction, Shubnikov-de Haas oscillations involving
Fermi arc states were indeed detected in Cd3As2
[312].
In strong magnetic fields, Fermi arcs can also
give rise to a 3D quantum Hall effect, with complete
loops formed via wormhole tunneling assisted by the
Weyl nodes [313]. A peculiar phenomenon present
in WSMs in magnetic fields is the chiral magnetic
effect, the generation of an electrical current parallel
to a magnetic field when the Weyl nodes are offset in
energy by a finite amount. Fermi arcs are expected
to make a finite contribution to the chiral magnetic
effect opposite in sign to the bulk contribution, which
change the sign of the overall result [314]. This holds
even in the infinite-system limit because, even though
the number of surface modes decreases, the remaining
modes are more sensitive to magnetic flux.
Research is burgeoning on the unusual optical
properties of Fermi arc states. They interact strongly
with light and have a large optical conductivity for light
polarised transversely to the arc [315]. They affect the
plasmon dispersion, which is already unconventional in
bulk WSMs [316, 317]. There the axion term lifts the
degeneracy of the three gapped plasmon modes at q =
0 [316]. This because WSMs are gyrotropic, meaning
their dielectric tensor is asymmetric, and the degree of
asymmetry is proportional to the separation between
the nodes, which acts as an effective applied magnetic
field in momentum space.
In magnetic systems with
broken time reversal symmetry Fermi arc plasmons are
chiral, with constant frequency contours that are open
and hyperbolic [318]. Their dynamics is also strongly
linked to quantum non-local effects, for example they
decay by emitting electron-hole pairs in the bulk [319].
8. Non-linear electrical response
Undoubtedly the most exciting novel development in
topological materials transport has been the take-off
of non-linear electrical effects, which can be enabled
by the lack of inversion symmetry, the application of
a magnetic field, or the presence of a valley polari-
sation. An early work illustrated the role of mirror
planes in determining the charge and spin response
[320], yet the community is still only beginning to ap-
preciate the richness and variety of physical phenom-
ena that emerge when higher-order responses in the
applied fields are allowed. Geometrical phase effects
in first order response, as well as their interplay with
disorder, are relatively well understood. However in
the second order response most of the ground work re-
mains to be done. The quantity of interest is the next
term in perturbation theory beyond linear response to
an electric field, which can be formulated diagrammat-
ically, semiclassically, or in terms of the density matrix.
The non-linear optical response, particularly strong in
TMDs, encompasses conceptually new phenomena in-
cluding second harmonic generation and nonreciprocal,
rectification and shift currents. Non-reciprocal refers
to phenomena that have a built-in bias direction, such
current flow in a p − n junction. These relatives of the
photogalvanic and photovoltaic effects are frequently
encoded by the Berry phase, the toroidal moment, and
the magnetoelectric monopole, or may have extrinsic
origins such as magnon scattering. The relevant con-
cepts are beautifully summarised in Ref. [321]. Growth
in this field has been spurred by spectacular experi-
mental developments, motivated by the possibility of
detecting the relevant response by scanning higher har-
monics of the applied frequency. One of the grand aims
is to find a Hall effect in time-reversal symmetric sys-
tems: two papers have reported a nonlinear Hall effect
in bilayer/few-layer WTe2 [322, 323]. In [322] the non-
linear Hall effect results in a much larger transverse
than longitudinal voltage, with a nonlinear Hall an-
gle of nearly π/2, which may have topological origins
[324]. The non-linear Hall effect is generally extrinsic
in time-reversal invariant systems, but can be intrinsic
if time-reversal symmetry is broken [325, 326].
The static non-linear Hall conductivity contains
an intrinsic contribution proportional to the Berry
curvature dipole in reciprocal space, that is, the term
kΩk, where Ωk is the Berry curvature [327, 328,
329]. The nonlinear Hall effect arising from the
Berry curvature dipole in TMDs with time-reversal
symmetry was examined in Ref. [330], which showed
that such a current is present when only one mirror
line exists, while in certain TMD phases a finite Berry
curvature dipole emerges when strain or electrical
displacement fields are applied. WSMs are also
expected to be excellent candidates for nonlinear effects
because of their large Berry curvature concentrated
near the Weyl points, and in a related study, the
Berry curvature dipole was investigated in WSMs [331],
concluding that type-II Weyl points, having a strong
tilt, were preferable to type-I. In this vein, Nandy
and Sodemann [41] calculated the non-linear Hall
conductivity of two-dimensional tilted Dirac fermions
using a multi-band quantum Boltzmann equation,
identifying disorder contributions in addition to the
intrinsic Berry curvature dipole. Recent work by
the same group [332] reveals that the rectification
current obeys a sum rule controlled by the Berry
connection. Rectification at relatively high frequencies
has also been studied in Ref.
Non-linear
Hall effects can also be induced by disorder [334].
In the context of tilted Dirac cones we note the
[333].
CONTENTS
29
revealing renormalisation group work of Ref. [335] on
the Coulomb interaction and quenched disorder in
tilted TIs. Along the tilting direction a random scalar
or vector potential dynamically generates a new type
of disorder, dominant at low energies, which turns the
system into a compressible diffusive metal, with the
fermions acquiring a finite scattering rate. The band-
touching point is replaced by a bulk Fermi arc in the
Brillouin zone. The consequences of these features for
transport remain to be determined.
An in-plane magnetic field has a subtle effect
on the non-linear electrical response of a hexagonally
warped TI at frequencies very close to the DC limit
[336]. Whereas an in-plane magnetic field merely
shifts the origin of a Dirac cone with no physically
measurable effect, when the Hamiltonian contains a
warping term the effect on the spectrum is non-
trivial, and a strong non-linear response results, termed
bilinear electromagnetic response.
Its sign and the
magnitude depends sensitively on the orientation of
the current with respect to the magnetic field as well
as the crystallographic axes, so that the spin texture
of the topological surface states could be mapped via a
transport measurement. The bilinear magnetoelectric
resistance was measured in hexagonally warped TIs
in [337],
On the other hand,
[208] a second harmonic Hall voltage was
in Ref.
detected in the presence of in-plane magnetic field and
magnetisation in TI heterostructures, believed to be
due to asymmetric magnon scattering.
In a similar
manner to a magnetic field, a time-reversal breaking
valley polarisation allows second harmonic generation
even in centrosymmetric crystals, and this in turn can
provide a direct measure of the valley polarisation
[338].
Fig. 14.
cf.
effect
in ferroelectric materials,
Noncentrosymmetric crystals are anticipated to
exhibit a dc photocurrent in the nonlinear optical
response [339].
This so-called shift current has
attracted intensive attention as part of the bulk
photovoltaic
in
the quest for efficient solar cell paradigms.
Its
fundamentally origin is the fact that, as an electron
is excited by light from the valence band into the
conduction band, its centre of mass changes due to
the difference in the value of the Berry connection
in the two bands.
The final expression can be
formulated in terms of the Berry curvature dipole
in momentum space discussed above and is gauge
Since the centre of mass is shifted the
invariant.
effect has been termed a shift current.
It is being
pursued in topological materials as well. Kim et al
[340]
identified a sizable shift current generated in
hexagonally warped TIs by linearly polarised light. A
related nonlinear spin current also exists in TIs, which
can be excited by THz light [341]. When inversion
Figure 14.
Bilinear magnetoelectric resistance, adapted
from [337]. (a) Hexagonally warped energy dispersion for the
surface states with Fermi surface lying in the conduction band.
(b) Hexagonally warped spin texture at the Fermi contour of
the surface states.
(c) Variation of the electron distribution
along the k-axis parallel to the applied electric field E: δf1
(blue curve) and δf2 (yellow curve) are the corrections to the
equilibrium distribution of first and second order in the electric
field, respectively. Solid arrows represent the excess of electrons
with spins along the arrow direction, and hollow arrows represent
depletion of the same. (d) When an electric field E is applied
along a certain direction in k-space (dash-dotted line), a non-
equilibrium spin current Js(E2) is generated at the second order
of the electric field, due to spin-momentum locking. (e) and (f)
When an external magnetic field is applied, the nonlinear spin
current is partially converted into a charge current J(cid:48)
e(E2): a
high-resistance state is reached (e) when the magnetic field is
antiparallel to the spin direction of the electronic states with
k (cid:107) E, while a low-resistance state is reached (f) when the
magnetic field is parallel to that spin direction.
symmetry is broken but time-reversal symmetry is
preserved a nonlinear anomalous Hall effect emerges in
certain TMDs [342], while a dissipationless nonlinear
anomalous node conductivity is also expected in WSMs
[343].
9. Chiral superconductivity, Majorana edge
modes and related phenomena
In the preceding sections, we have dealt with normal
topological materials in which no pairing interaction
among electrons
However, pairing
interactions bring about new topological phenomena.
Some earlier theoretical examples pertain to superfluid
helium 3 (3He) [344, 345], anyon superfluids [346],
takes place.
!"#0!"%#<0!"%#>0!"(#>0!"(#<0−#*#*+,-+(eHigh resistance,:;+(<+Low resistance,:;+(<+fcdab@*TSS#C#DKMG CONTENTS
30
d-wave superconductors [347, 348, 349], and the
fractional quantum Hall effect [350]. The theory
[350] has illustrated the concept of a topological
superconductor as a system with a bulk pairing gap
and a gapless Majorana mode at the boundary or on
a topological defect. Such emergent Majorana modes
obey the quantum statistics of non-Abelian anyons
[351, 352, 353], offering a route to braiding-based
topological quantum computation [354]. Research
into topological superconductivity has intensified with
the discovery of topological
insulators and related
topological materials, with a flurry of theoretical as
well as experimental activity that followed. Distinct
classes of
superconductors have been
identified (see, e.g., Refs.
[355, 356, 357]). Their
properties have been a subject of several review articles
[358, 359, 360, 361, 362, 363, 364, 365].
topological
Still, the field of topological superconductivity
is growing fast, having in some areas advanced
well beyond the existing review literature.
This
pertains, in particular, to the latest developments in
chiral superconductivity, Majorana edge modes, the
fractional Josephson effect as well as unconventional
Cooper pairing in topological materials. These topics
define the primary scope of our review article. We have
endeavoured to mention key ideas and developments
in the overlapping areas such as specific models and
realisations of Majorana zero modes, their tunneling
spectroscopy and related transport phenomena. These
topics have been covered in several review articles.
Further details of the underlying physics and a survey
of the results can be found easily in the cited references.
9.1. Chiral superconductivity. A primer
(cid:35)
(cid:34)
Superconductivity originates from attractive pairwise
interactions between electrons in a metal. As is
common in many-body physics, the pairing interaction
can be treated in the mean-field approximation,
allowing the description of a superconducting state by
the Bogoliubov- de Gennes (BdG) Hamiltonian
(cid:34)
(cid:35)
uk
vk
∆k
Hk
†
k −H∗
∆
−k
.
,
(20)
Ψk =
Hk =
It is a 2 × 2 matrix in which Hk is a single-particle
Hamiltonian of the normal system, while the off-
†
diagonal entry ∆k and its hermitian conjugate ∆
k
account for the pairing interaction. The state Ψk has
two (Nambu) components, uk and vk, being a particle-
and a hole-like wave functions of the normal system,
respectively.
Coming from the pairing interaction, the matrix
structure of the BdG Hamiltonian is crucial for emer-
gent topological superconductivity. A paradigmatic
example is a 2D superconductor with an odd k - parity
Figure 15. Schematic of an equal-spin p - wave electron pairing
assumed in Eqs. (21) and (22).
gap function [350, 351]:
∆k = ∆(cid:48)(kx + iky),
(21)
where the constant ∆(cid:48) is taken real. Equation (21)
describes equal-spin pairs in the orbital p - wave state
with the quantum number m(cid:96) = 1 (see also Fig. 15).
It has a partner with the quantum number m(cid:96) = −1.
These are the 2D analogues of the A-phase of superfluid
3He [366, 367]. We shall see later that the kx + iky -
pairing (21) is also an effective model for the hybrid
structures of quantum anomalous Hall insulators and
conventional superconductors. As for the normal-state
Hamiltonian, here we choose the simplest, parabolic
band conductor with Hk = k2
2m − µ, where µ is the
chemical potential. Then, the BdG Hamiltonian reads
Hk =
k2
2m − µ
∆(cid:48)(kx − iky) −( k2
∆(cid:48)(kx + iky)
2m − µ)
,
(22)
(cid:34)
(cid:35)
(cid:21)
(cid:20)
or, in the basis of the Pauli matrices τ = [τ1, τ2, τ3],
k2
2m − µ
∆(cid:48)
kx, −∆(cid:48)
.
ky,
Hk = τ · dk, dk =
This equation resembles the spin Hamiltonian of a
ferromagnet, with vector dk playing the role of the
magnetization. In this case, dk defines the texture of
the Nambu pseudospin τ /2 in the 2D momentum space
(see Figs. 16 and 17).
(23)
The topology of the pseudospin texture can be
characterized by the winding number
(cid:90)
(cid:18) ∂nk
(cid:19)
C =
1
4π
nk·
∂kx ×
∂nk
∂ky
dkxdky, nk =
, (24)
dk
dk
in differential geometry,
is the first Chern
which,
invariant of a principal U (1) bundle over a torus
[149, 368]. Geometrically, C is the number of times
the unit vector nk sweeps a unit sphere as k covers
the entire momentum space. The Chern invariant
acquires nontrivial values C = ±1 under condition
µm > 0.
In this case, the configuration of the
vector dk defines the skyrmion, a topological defect
that compactifies the physical space on a sphere (see
Fig.
16). The superconducting state is, therefore,
topologically nontrivial as opposed to the case µm < 0
(Fig. 17) in which no d - vector winding takes place,
hence C = 0.
CONTENTS
31
Figure 16.
Schematic of the Nambu pseudospin texture in
a topological superconducting state for µm > 0 in Eq.
(23).
The texture has the skyrmion topology with a nontrivial Chern
number C = ±1.
The above considerations have clear parallels with
Chern insulators and the quantum anomalous Hall
effect in zinc-blende materials (see recent review in
Ref.
In a Chern insulator, C corresponds to
the TKNN invariant [149, 368] and can be obtained
from the Berry curvature of the electronic bands as
[369]).
C =
1
2
[sgn(−µ) − sgn(m)].
(25)
This analytical result confirms the picture of the
winding of dk in momentum space shown in Figs. 16
and 17. As in Chern insulators, the nontrivial number
C indicates a chiral gapless state at the edge of a TS
(see Fig. 18). Furthermore, due to the generic particle-
hole symmetry
CH(x, y)C† = −H(x, y),
(26)
the edge modes of TSs mimic Majorana fermions
of the relativistic quantum theory. Above, H(x, y)
is the real-space BdG Hamiltonian, and C is the
particle-hole conjugation operation. In non-topological
superconductors, C converts a particle into a hole and
vice versa. The Majorana edge state, ΨM (x, y, t),
transforms to itself under C:
C
M (x, y, t) = ΨM (x, y, t),
Ψ
(27)
(cid:34)
ΨM (x, y, t) =
(cid:35)(cid:88)
that is, emergent Majorana fermions in TSs are
particles and holes at the same time. For the BdG
Hamiltonian (23), the conjugation operation is C =
τ1K, so the Majorana edge solution is a real eigenstate
of τ1. For a "hard-wall" boundary [369], it is given by
(cid:104)
κ−(kx)y(cid:105)
Nkx
× cos [kxx − E(kx)t/] . (29)
It is assumed that the TS occupies the half-space y ≤ 0,
and the edge mode propagates along x. It has a linear
dispersion
E(kx) = ∆(cid:48)
κ+(kx)y − e
(30)
(28)
kx,
1
1
kx
e
Figure 17. Schematic of the Nambu pseudospin texture in an
ordinary superconducting state for µm < 0 in Eq. (23). In this
case, the Chern number is trivial, C = 0.
(cid:112)
m2∆(cid:48)2 + k2
and is localized on the scale given by κ± = m∆(cid:48)
x − k2
±
F . The coefficients Nkx of the sum
The
(28) are the normalizing factors.
in Eq.
normalizability requires that kx < kF .
9.2. Search for intrinsic chiral superconductivity and
related phenomena
It is a quasi - 2D material
The model discussed above illustrates the principal
possibility and essential attributes of the topological
chiral p - wave superconductivity.
Perhaps the
first material
for which such a possibility has
been considered is the layered perovskite ruthenate
Sr2RuO4.
in which
ruthenium oxides tend to become ferromagnetic, which
favours a spin-triplet order parameter [370, 371]. If the
spin-triplet superconductivity has a definite chirality,
the time-reversal symmetry should be broken below
the critical temperature Tc. The expectation that
Sr2RuO4 harbors such chiral superconductivity was
strengthened by the muon spin rotation experiments
[372] which detected internal magnetic fields below
Tc. While the scenario of the chiral p - wave
superconductivity in Sr2RuO4 may be debatable, the
tunneling experiment [373] has reported an enhanced
zero-bias conductance consistent with the existence
of the boundary modes. The zero-bias peak in the
tunneling spectrum was attributed to the surface
Andreev bound states (ABSs), although this would
not generally tell whether the order parameter is chiral
Figure 18. Schematic of a chiral Majorana edge state in a TS
[see also Eqs. (27) -- (29)].
kxkydkEkxkyEdk CONTENTS
32
or helical [374]. Initially, the theory of the tunneling
spectroscopy of the surface ABSs was developed for
d-wave superconductors [347, 349]. Reference [375]
has extended the theory to Sr2RuO4, using a three-
band model and the recursive Green's function method.
The tunneling spectra with both zero-energy peaks
and zero-energy dips were found, depending on the
spatial dimensionality of the model and the presence
or absence of SOC. Another recent theoretical work
[376] has proposed to identify the chiral p-wave
superconductivity by the electronic states on a domain
wall between the order parameters with opposite
If the superconducting order
chiralities (kx ± iky).
parameter breaks the time-reversal symmetry, domains
with different chiralities and opposite edge currents are
expected to form akin to the ferromagnetic domains.
An experimental attempt to detect such chiral domains
has been reported in Ref.
[377]. A recent review on
the point-contact spectroscopy as a means of detecting
topological superconductivity is given in Ref. [378].
Beside the chiral phase in Sr2RuO4,
there
has been a theoretical proposal
for a topological
crystalline superconductor phase in this material
[379].
It is characterized by a pair of Majorana
modes each protected by the mirror symmetry of
the Sr2RuO4 crystal structure.
Reference [379]
discussed a magnetic-field-induced transition into
the
superconducting state
accompanied by a rotation of the Balian-Wertheimer
d vector parametrizing the triplet order parameter.
topological
crystalline
If, however,
[388] ‡.
Apart from Sr2RuO4, a number of other candidate
materials to host topological superconductivity have
been identified in the past decade, most notably
CuxBi2Se3 [380, 381, 382], Sn1−xInxTe [383, 384]
as well as some noncentrosymmetric superconductors
in which the p - wave gap is larger than the s
- wave one [385, 386, 387]. As opposed to the
chiral superconductivity, these materials are expected
to host time-reversal symmetric (helical) topological
phases
the time-reversal
symmetry is broken by an external magnetic field,
noncentrosymmetric low-dimensional superconductors
may turn into chiral TSs [389, 390, 391]. Normally,
this requires a magnetic field that is by far larger
than the upper critical field Hc2.
The way to
overcome this problem is to apply the field parallel
to the basal plane, reducing the Meissner currents in
favour of the Zeeman splitting. The theory [389] has
examined such a possibility for the superconducting
interface between LaAlO3 and SrTiO3, assuming
the Rashba SOC and a three-band model. More
recently, 1D structures at LaAlO3/SrTiO3 oxide
interfaces have been found to support Majorana
modes [390].
In fact, metallic superconducting films
‡ The state of the art is well captured in the review article [363].
Figure 19. Schematic of a hybrid structure created by placing
a singlet superconductor (S) on top of a topological insulator
(TI) material. Andreev reflection at the S/TI boundary gives
rise to the superconducting proximity effect.
grown on a substrate and subject to an in-plane
magnetic field may have all the ingredients required to
achieve chiral superconductivity, i.e. Copper pairing,
broken inversion symmetry, and broken time-reversal
symmetry. This expectation has been supported by
the density functional theory calculations for ultrathin
Pb and β-Sn [391].
9.3. TI materials as platform for topological
superconductivity and Majorana fermions
The above discussion pertains to intrinsic supercon-
ductivity when the symmetry breaking order parame-
ter occurs spontaneously below a certain Tc (∼ 1.5 K
for Sr2RuO4). An alternative to that is the induced
superconductivity which occurs in a normal conduc-
tor brought into electric contact with an intrinsic su-
perconductor (see also Fig. 19). Although the nor-
mal conductor has no pairing interaction of its own, it
acquires the superconducting correlations through the
proximity effect. Microscopically, this can be under-
stood in terms of Andreev reflection [392, 393] whereby
a particle in the normal system is converted into a hole
(and vice versa), while a Cooper pair passes through
the interface, as sketched in Fig. 19. The particle-
hole conversion is most efficient when the thickness of
the normal region is smaller than the phase coherence
length.
system.
the normal
The superconducting proximity effect offers an
attractive alternative to intrinsic superconductivity,
as topological phases can be "engineered", using
broken symmetries of
A
prominent example is the theoretical proposal [394]
for a chiral TS and Majorana fermions at
the
surface of a 3DTI proximitized by a conventional
(singlet
In the past
s-wave)
decade,
impressive progress has been achieved in
fabricating and characterizing hybrid structures of
superconductors and TI materials [395, 396, 397, 398,
399, 400, 401, 402, 403, 404, 405, 406, 407, 408, 409,
superconductor.
CONTENTS
33
410, 411, 412, 413, 414, 415, 416, 417, 418, 419, 420,
421, 422, 423, 424, 425, 426, 427, 428, 429, 430, 431,
432, 433, 434]. Most of these experiments have used the
tetradymite compounds Bi2Se3 and Bi2Te3, ternary
tetradymites (e.g., Bi2Te2Se) or later generations of
Bi-based compounds such as Bi2−xSbxTe3−ySey [435].
Other types of the TI materials include thick strained
HgTe layers [403, 405, 414, 417], HgTe quantum wells
[408, 421, 422, 423], topological crystalline insulator
SnTe [428, 429], and Cr-doped (Bi,Se)2Te3 thin films
[424, 431].
The latter are magnetic topological
insulators that, in the absence of the superconducting
pairing, exhibit the quantum anomalous Hall effect
[436]. That is, Cr-doped (Bi,Se)2Te3 thin films with
Nb contacts, such as in Refs. [424, 431], are prototypes
of the quantum anomalous Hall insulator (QAHI) -
superconductor devices.
[437] has
A related paper
reported an ob-
servation of 2D topological superconductivity in a
Pb/Co/Si(111) structure. It was modeled as a Rashba
system with a mixed singlet-triplet pairing and an ex-
change interaction.
In fact, TI materials with induced superconduct-
ing and magnetic orders have long been a fertile ground
for theoretical modeling of the chiral TS and related
phenomena (see, e.g., [394, 438, 439, 440, 441, 442,
443, 444, 445, 446, 447, 448, 449, 450, 451, 452, 453,
454, 455, 456, 457, 458]). This includes the issues
of the observability of neutral Majorana fermions in
quantum interferometry [438, 439], fractional Joseph-
son effect [440], resonant Andreev reflection [441], mag-
netic proximity effect [442], backscattering processes
[446], current noise [448], tunneling spectroscopy [450],
crossed Andreev reflection [452], half-integer longitu-
dinal conductance [453], edge-state-induced Andreev
oscillations [456], just to name a few.
In particular,
in the series of papers
[444,
446] and [453], a kx + iky phase with a chiral
Majorana edge mode has been discovered theoretically
in QAHI/superconductor structures.
Its expected
transport signatures are Majorana backscattering and
the half-integer longitudinal conductance.
In the
following, these ideas are discussed in some more detail.
9.4. Chiral TS with a single Majorana edge mode in
QAHI/supercondictor structures
nian for a magnetic thin film, H =(cid:80)
To set the scene, we define the normal-state Hamilto-
†
kHkck, where
k c
Hk is an effective 4-band Hamiltonian [453]:
Hk = A(σxky − σykx)ν3 + Mkν1 + λσz − µ,
k↓]. Here, the operator ct,b
and ck = [ct
kσ
annihilates an electron with momentum k and spin
σ =↑,↓, and the superscripts t and b refer to the top
and bottom surface layers of the film, respectively. σi
k↑, cb
k↓, cb
k↑, ct
(31)
(with i = x, y, z) and νj (with j = 1, 2, 3) are Pauli
matrices in spin and layer subspaces, respectively. The
first term in Eq. (31) is the Hamiltonian of the two
surface layers, where the constant A (assumed positive
throughout) determines the surface velocity. The
second term Mkν1 introduces the coupling between the
layers, opening a hybridization gap at the Γ point (k =
0). The hybridization energy is Mk = M0 + M1(k2
x +
k2
y), where M0 yields the half of the gap between the
conduction and valence bands, while M1 accounts for
the band curvature. The third term λσz is the mean-
field exchange Hamiltonian due to the ferromagnetic
ordering, with λ being the exchange energy.
The Hamiltonian (31) decouples into two Chern
subsystems with the Dirac masses λ ± Mk, where the
signs ± are dictated by the time-reversal symmetry.
The corresponding Chern number is the sum of the
Chern numbers for the two subsystems [cf. Eq. (25)],
(cid:88)
ν=±
C =
=
1
2
1
2
[sgn(λ + νM0) − sgn(νM1)]
[sgn(λ + M0) + sgn(λ − M0)].
(32)
(33)
(34)
(cid:34)
(cid:35)
topological number
A similar
is encountered in
Haldane's model [16]. Taking for simplicity M0 > 0
and λ > 0, we see that the system undergoes a
topological phase transition from an ordinary insulator
with C = 0 for λ < M0 to a QAHI with C = 1 for
λ > M0:
(cid:26) 0 λ < M0,
1, λ > M0.
C =
In the latter case, there is a chiral edge mode realizing
a gapless Dirac fermion.
In contact with a conventional superconductor,
placed on top of the structure, the magnetic film can
be described at low energies by the BdG Hamiltonian
(20) with the singlet pairing
∆k =
∆tiσy
0
0
∆biσy
,
(35)
11 for a microscopic theory of the
see also Sec.
superconducting proximity effect. Here, ∆k is a matrix
in the layer subspace where ∆t and ∆b denote the pair
potentials in the top and bottom layers. As found in
Ref. [453], the essential condition for realizing a chiral
TS is to have unequal pairing amplitudes ∆t (cid:54)= ∆b.
This point is best illustrated in the special case where
∆t = ∆,
∆b = −∆,
µ = 0,
(36)
and ∆ is real. In this case, the BdG Hamiltonian takes
a compact form
Hk = A(Σxky − Σykx) + (λ + MkV1 + ∆T1)Σz,
(37)
CONTENTS
34
Figure 20. Chern number of a QAHI/superconductor hybrid
N (43) as function of exchange energy λ in units of M0.
For a finite pairing energy ∆, a plateau develops at N = 1,
corresponding to a chiral kx + iky state with a single Majorana
edge mode (29).
where Σx, Σy, Σz, V1, and T1 are the 8 × 8 matrices
(38)
T1 = τ1ν0σz,
Σx = τ3ν3σx, Σy = τ3ν3σy, Σz = τ0ν0σz,
V1 = τ0ν1σz,
and ν0 and τ0 are the unit matrices in layer and Nambu
subspaces. Now, the sum λ + MkV1 + ∆T1 in Eq. (37)
is the Dirac mass matrix. Furthermore, V1 and T1
commute with each other and with any of Σi, so in
the basis of the common eigenstates of V1 and T1 the
mass matrix has a diagonal structure with the entries
(39)
ν, τ = ±1.
λ + νMk + τ ∆,
(40)
ν and τ are the eigenvalues of V1 and T1, respectively.
Therefore, the BdG model for the QAHI decouples into
four Chern subsystems or, equivalently, four species of
the 2D kx + iky - superconductor. Accordingly, the
total Chern number is
(cid:88)
ν,τ =±
N =
1
2
[sgn(λ + νM0 + τ ∆) − sgn(νM1)]
=
1
[sgn(λ + M0 + ∆) + sgn(λ − M0 + ∆)
2
+ sgn(λ + M0 − ∆) + sgn(λ − M0 − ∆)].
To distinguish the superconducting case, we use here
the notation N instead of C (cf. Ref. [453]).
The superconducting pairing ∆ allows for specific
phase transitions that are absent in the normal case
(see Fig. 20). For low-Tc superconductor structures,
we can safely assume ∆ < M0. Then, for positive
parameters, the possible values of the Chern number
(42) are
(41)
(42)
(43)
0
N =
1 M0 − ∆ < λ < M0 + ∆,
2,
λ < M0 − ∆,
λ > M0 + ∆.
[453, 424]).
Figure 21. Schematic of the chiral edge modes and Majorana
backscattering in QAHI/superconductor (S) structure (after
Refs.
(a) For a large enough exchange field λ,
a pair of incident Majorana edge modes (making up a single
Dirac edge mode) match those in the superconducting region
and pass almost perfectly through the device.
(b) As the
exchange field λ decreases, the state of the superconducting
region switches to the chiral (N = 1) TS, such that one of
the paired Majorana edge modes vanishes. Consequently, only
one of the incident Majorana edge modes is transmitted to the
superconducting region, whereas the other Majorana mode is
almost perfectly reflected, resulting in the half-integer 0.5 e2/h
longitudinal conductance [453, 424].
In other words, an increasing exchange field λ
induces a series of phase transitions from an ordinary
superconductor with N = 0 to the topological phases
with N = 1 and N = 2. The latter has two chiral
Majorana edge modes which correspond to a single
Dirac mode, so the N = 2 phase matches the QAHI
with C = 1. The truly new phase is that with the odd
Chern number N = 1 (43), which is nothing else as
the kx + iky TS with a single chiral Majorana edge
mode such as discussed above [cf. Eqs.
(23) and
(28)]. By reversing the magnetization λ → −λ, one
can also access the opposite-chirality states N = −1
and N = −2.
[453], the N = 1 phase
can be identified by a half-integer plateau 0.5 e2/h
in the longitudinal conductance as a function of
the exchange field.
The proposal relies on the
backscattering of Majorana edge modes [446] which
is expected in a QAHI/superconductor device at the
topological transition to the N = 1 phase. The
basic setup consists of a magnetic thin film and a
superconducting bar place across it, as depicted in
Fig.
21. For a large enough exchange field (λ >
M0 + ∆, see Fig. 21a), the normal regions are the
As argued in Ref.
(cid:68)(cid:61)0(cid:68)(cid:68)(cid:68)(cid:68)(cid:68)(cid:68)(cid:68)(cid:68)(cid:68)(cid:185)0012Λ12N CONTENTS
35
fields during magnetization reversals in an external
out-of-plane magnetic field. Some of the experimental
data on the sample characterization and the occurrence
of the half-integer plateaus are shown in Fig. 22.
Following the experiment [424], alternative the-
oretical and experimental interpretations of the half-
integer longitudinal conductance have appeared. Ref-
erence [459] suggested a mechanism for the 0.5 e2/h
conductance plateau without 1D chiral Majorana
fermions.
It was argued that such plateaus could
be a feature of a good electric contact between
quantum Hall and superconducting films, and could
therefore indicate neither the existence nor absence
of 1D chiral Majorana fermions. The experiment
[434] reported high-probability Andreev reflection in
QAHI/superconductor structures, attributing their
findings to high contact transparency and interpreting
in this context the origin of the 0.5 e2/h conductance
plateau. The theory [460] argued that a nearly flat con-
ductance plateau, similar to that in Ref.
[424], could
also arise from the percolation of quantum Hall edges
well before the onset of the topological superconduc-
tivity or at temperatures much above the TS gap.
shown that quasi-1D QAHI
Another line of the theoretical research has dealt
with the issues of control and manipulation of chiral
Majorana fermions for possible practical applications
of realistic QAHI/superconductors devices. Reference
[461] has
structures
could exhibit a broad topological regime supporting
localized Majorana zero energy modes and proposed to
implement networks of such quasi-1D QAHI systems
for scalable topological quantum computation. Since
the Majorana fermion is a charge-neutral particle,
the direct effect of an electric field on them should
fail. The recent study [462] has proposed a magnetic
flux control of the transport of chiral Majorana
fermions in topological superconducting devices with
Josephson junctions. Reference [463] has found that
the propagation of chiral Majorana fermions could
lead to the same unitary transformation as that in
the braiding of Majorana zero modes,
suggesting
a platform to perform quantum computation with
chiral Majorana fermions. The theoretical work [464]
has suggested an interferometer for chiral Majorana
modes where the interference effect was caused and
controlled by a Josephson junction of proximity-
induced TSs. Another recent paper [465] elaborates on
the deterministic creation and braiding of chiral edge
vortices in hybrid structures.
10. Topological weak superconductivity and
the fractional Josephson effect.
Striking manifestations of topological superconduc-
tivity are expected to occur in weak links between
Figure 22.
Half-integer longitudinal conductance as a
signature of single chiral Majorana edge modes (From [424].
Reprinted with permission from the American Association
In particular, C shows
for the Advancement of Science.)
the longitudinal conductance σ12 as a function of external
perpendicular magnetic field measured at 20 mK. When
superconductivity is induced on the top surface of the QHAI,
σ12 shows additional half-integer plateaus ( 0.5e2/h) between
the transitions of the C = ±1 QAHI and the normal insulator.
(Lower plot in C) Derivative of σ12 with respect to the magnetic
field. Topological transitions are indicated by dashed lines and
arrows. For full details of the presented data, see Ref. [424].
C = 1 QAHI with a Dirac edge state propagating
along the sample boundary, while the superconducting
region supports two Majorana edge modes, forming
the phase with N = 2. Since a Dirac fermion is
composed of two Majorana ones, we can think of
two incident Majorana edge modes which match those
in the superconducting region, getting transmitted
almost perfectly through the device. Consequently, the
longitudinal conductance, σ12, between contacts 1 and
2 reaches the quantum e2/h.
Upon lowering the exchange field to M0 < λ <
M0 + ∆, the state of the superconducting region
switches to the chiral TS with N = 1, such that one of
the paired Majorana edge modes vanishes, while the
normal regions are still the C = 1 QAHI (see Fig.
21b). In this regime, only one of the incident Majorana
edge modes can be transmitted to the superconducting
region, whereas the other Majorana mode is almost
perfectly reflected. This is what Ref.
[453] called
the separation of the two Majorana modes at the
superconducting boundary, resulting in a half-integer
plateau 0.5 e2/h in the longitudinal conductance.
Following this theoretical prediction, the experimental
paper [424] reported the observation of the half-integer
longitudinal conductance plateaus close to the coercive
CONTENTS
36
(cid:26) 1
0
low-dimensional systems supporting Majorana modes.
Some illustrative examples of such systems are 2D
d-wave superconductors [348], 1D p-wave supercon-
ductors [352, 466, 467], superconductor/semiconductor
wires [468, 469, 470, 471], Shiba chains [472, 473],
RKKY wires [474], just to name a few. The bound-
aries of 1D TSs host a pair of Majorana zero modes
(MZMs). These 0D cousins of the chiral Majorana edge
mode appear at the midgap energy, i.e. at exactly zero
energy relative to the Fermi level.
An interesting implication of the MZMs is the
degeneracy of the ground state. For a pair of MZMs,
there are two possible ground states corresponding to
the eigenvalues ±1 of the hermitian operator iγ1γ2,
†
where γi are self-adjoint fermionic operators γi = γ
i
that square to 1 (Majorana operators). If we combine
them into a usual fermion c = (γ1 + iγ2)/2, the two
ground states have different occupation numbers
†
c
c =
1
2
(1 + iγ1γ2) =
,
(44)
fermion parities.
hence different
In Josephson
junctions (JJs) of two TSs brought into electric
contact, a change of the Josephson phase difference
by 2π effectively causes swapping the MZMs and a
transition between the ground states [352]. This leads
to the 4π - periodicity of the MZMs, as another phase
advance of 2π is needed to recover the same ground
state.
Systems supporting the MZMs may prove useful
in braiding-based topological quantum computation in
which computing operations are performed by unitary
transformations within a degenerate set of ground
states [354, 475, 476, 477, 362]. However, the MZMs
are not readily available in solids, and much effort
has been put into engineering and detecting them in
accessible materials and structures (see review articles
[359, 360, 361, 362, 363, 364, 365]). A growing number
of experiments has been testing the existence of the
MZMs in various superconducting structures, using
tunneling spectroscopy (see Refs.
[478, 479, 480, 415,
481, 482, 483, 484, 485]) and Josephson effects (JEs)
(see Refs. [486, 417, 422, 423, 487, 488, 489, 490, 433]).
The JE diagnostics of topological weak links relies
on the so-called fractional JE associated with the
ground state degeneracy. First proposed for model p-
wave superconductors [352, 466, 467] the fractional JE
is also achievable in hybrid structures of conventional
superconductors and normal SOC materials, which
has caused the recent surge of interest in this and
related phenomena.
Here, we review this topic
from the theoretical perspective, aiming to give some
background on the fractional JE and summarize the
findings of different models.
10.1. Majorana zero modes in a 1D chiral TS
As an exemplary model, we can choose a 1D version
of the BdG Hamiltonian of the kx + iky TS [see Eq.
(20)]. Alternatively, we can think of the chiral TS in
the QAHI/superconductor structures at the transition
to the N = 1 state [see Eqs.
(37) and (43)]. The
reported observability of such transitions [424, 431]
gives us extra reason for this choice. With the x-axis
parallel to the system, we can write
(cid:35)
(cid:34)
H =
= τ3
∆(cid:48)eiϕkx
2m − µ)
k2
2m − µ
x
(cid:16) k2
∆(cid:48)e−iϕkx −( k2
+ τ1∆(cid:48)
2m − µ
(cid:17)
e
x
x
−iτ3ϕkx,
(45)
(46)
(cid:16) k2
(cid:17)
where kx = −i∂x and ϕ is the phase of the order
parameter.
It is convenient to make a unitary
transformation of the BdG wave function,
Ψ(x) → eiτ3ϕ/2Ψ(x),
bringing the Hamiltonian to the form
(47)
x
+ τ1∆(cid:48)
−iτ3ϕ/2Heiτ3ϕ/2 = τ3
2m − µ
H → e
It maps to a 1D Dirac fermion model with a mass
term k2
2m − µ. Furthermore, akin to Jackiw - Rebbi
model [491] the chiral symmetry τ2H(x)τ2 = −H(x)
ensures the existence of the MZMs as eigenstates of
the chirality matrix τ2:
(48)
kx.
x
C
C
(x),
τ2Ψ
(x) = τ Ψ
τ2Ψ(x) = τ Ψ(x),
(49)
where τ = ±1 are the eigenvalues. The eigenstates of
τ2 are self-adjoint [cf. Eq. (27)], satisfying the equation
H(x)Ψ(x) = 0 or, equivalently,
x + 2µm − 2τ2∆(cid:48)
(∂2
m∂x)Ψ(x) = 0.
(50)
(cid:112)(∆(cid:48)m)2 − 2µm.
In view of Eq.
(49), this is an ordinary differential
equation with simple solutions in the half space (say,
x ≥ 0) for the boundary condition Ψ(0) = 0. The
substitution Ψ(x) ∝ e−κx yields two solutions for the
decay constant
κ± = −τ ∆(cid:48)
(51)
m ±
For ∆(cid:48)m > 0, the normalizability condition κ± > 0 is
met for τ = −1 in the parameter range
0 < 2µm < (∆(cid:48)
This defines the topological regime with a single MZM
at x = 0:
m)2.
(52)
1
−i
−κ+x − e
ΨM (x) = N
where N is the normalizing factor. By the same token,
the other eigenstate of τ2 would correspond to an MZM
localized at the opposite end of the TS.
(53)
(cid:34)
(cid:35)(cid:0)e
−κ−x(cid:1) ,
CONTENTS
37
10.2. Fractional Josephson effect. Phenomenology
(cid:34)
(cid:34)
(cid:34)
(cid:35)
The fractional JE is caused by the coupling of the
MZMs across a weak link between two TSs. The
phenomenology is rather independent of the details of
the TSs, and can be illustrated by an effective junction
Hamiltonian
HJ =
HR V †
V HL
,
V =
,
(54)
V0
0
0 −V ∗
0
(cid:35)
(cid:35)
where HR and HL are the Hamiltonians of the right
and left TSs, while operator V models the coupling
between them. V is a diagonal Nambu matrix where V0
is the normal-state coupling (generally complex, which
would break time-reversal symmetry). The unitary
transformation (47) in each TS yields
HJ →
HR
V eiτ3φ/2
V †e−iτ3φ/2
HL
, φ = ϕR − ϕL, (55)
where the coupling acquires the dependence on the
phase difference φ between the TSs, whereas the
transformed HR and HL are both phase-independent
akin to the Hamiltonian in Eq.
(48). The energy
spectrum of the JJ is obtained from the BdG equations
†
−iτ3φ/2ΨL,
e
(56)
EΨR = HRΨR + V
EΨL = V eiτ3φ/2ΨR + HLΨL,
(57)
assuming the normalization condition (cid:104)ΨL,RΨL,R(cid:105) =
1. In the lowest order in V , the energy levels can be
expressed through the MZMs by putting HRΨR = 0
and HLΨL = 0 and projecting the BdG equations on
the bra states (cid:104)ΨR,L. Denoting the solution by E+,
we have
−iτ3φ/2ΨL(cid:105).
E+ = (cid:104)ΨLV eiτ3φ/2ΨR(cid:105) = (cid:104)ΨRV
Since (cid:104)ΨRV †e−iτ3φ/2ΨL(cid:105) = (cid:104)ΨLV eiτ3φ/2ΨR(cid:105)
(58)
∗, the
(58) just means that the
e
†
second equality in Eq.
solution is real.
The particle-hole symmetry ensures the existence
irrespective of other sym-
C
L and
of another solution, E−,
metries of the system. Replacing ΨL → Ψ
ΨR → Ψ
E− = (cid:104)Ψ
where the matrix element can be evaluated as follows
C
R, we have
C
LV eiτ3φ/2Ψ
C
R(cid:105),
(59)
C
LV eiτ3φ/2Ψ
(cid:104)Ψ
C
R(cid:105) = (cid:104)ΨLC†
V eiτ3φ/2CΨR(cid:105)
= (cid:104)ΨLC†
V Ceiτ3φ/2ΨR(cid:105)
= − (cid:104)ΨLV eiτ3φ/2ΨR(cid:105).
(60)
(61)
(62)
We use the particle-hole symmetry C†V C = −V , due
to which the second level comes with the opposite sign
E− = −(cid:104)ΨLV eiτ3φ/2ΨR(cid:105).
(63)
Figure 23.
MZMs [see Eq. (64)].
4π - periodic ABSs from hybridization of two
Physically, E± are the levels of the Andreev bound
states (ABSs) formed by the two hybridized MZMs.
The corresponding wave functions Ψ± are the linear
combinations of the right and left MZMs. Remarkably,
the topological ABSs are 4π - periodic in the Josephson
phase difference φ. This is a qualitative distinction
from usual JJs where the ABSs are 2π - periodic [492].
For a time-reversal-invariant coupling V = V0τ3, the
terms ∝ sin(φ/2) vanish because of the orthogonality
of the MZMs, so the phase dependence of the energy
levels is reduced to
E±(φ) = ±(cid:104)ΨLV ΨR(cid:105) cos(φ/2),
see also Fig. 23. It is worth noting that microscopic
calculations assuming a potential barrier in the JJ
[348, 466, 467, 440] give a similar result for the ABS
spectrum
(64)
E±(φ) = ±(∆(cid:48)
kF )√D cos(φ/2),
(65)
where D is the barrier transparency, and kF is the
Fermi wave number.
Two aspects of the topological ABSs merit special
attention. First, their 4π - periodicity harbors the
topological degeneracy due to the underlying MZMs.
A phase translation φ → φ + 2π brings the JJ into a
state with the same energy
E+(φ + 2π) = E−(φ),
(66)
(44).
but with the opposite fermion parity, since the relative
sign of ΨR and ΨL has changed [cf. Eq.
(47)],
which corresponds to switching the occupation number
in Eq.
Second, each ABS carries a 4π -
periodic supercurrent. Since the phase and the particle
number are conjugate dynamical variables [493], a
phase dependent coupling energy gives rise to a current
flow between the systems.
In sufficiently short JJs,
a major contribution to the current-phase relation
(CPR) comes from the ABSs [492]. At equilibrium,
the CPR J(φ) is given by the thermodynamic formula
E(cid:43)E(cid:45)2Π4ΠΦ CONTENTS
38
J(φ) = J+(φ) + J−(φ),
J±(φ) =
e
∂E±(φ)
∂φ
n[E±(φ)],
(67)
(68)
where J±(φ) are the contributions of the two ABS
levels occupied according to the Fermi distribution
n(E). Using Eq. (64) and specially chosen occupations
n[E+(φ)] = 0 and n[E−(φ)] = 1, one has
J(φ) = J−(φ) =
e(cid:104)ΨLV ΨR(cid:105)
2
sin(φ/2).
(69)
This example illustrates the fractional JE which
is characterized by a subharmonic CPR with the
frequency 1/2. References [466, 467] proposed that
CPR (69) could be observed in voltage-biased JJs
where the phase difference evolves with time as φ(t) =
2eU t/, producing the current
J(t) =
e(cid:104)ΨLV ΨR(cid:105)
2
sin(eU t/),
(70)
oscillating at half the usual AC Josephson frequency
2eU/ at bias voltage U . That is, in topological JJs
the Josephson current is carried by single electrons,
rather than by Cooper pairs, or, in other words, an
MZM is, loosely speaking, half the fermion.
10.3. Recent theories of the fractional JE.
Non-equilibrium dynamics
More recent theories have revisited the fractional JE in
the context of MZMs in hybrid structures combining
conventional superconductors with topological insula-
tors or semiconductor nanowires [440, 448, 494, 495,
496, 497, 498, 499, 500, 501, 502, 503, 504, 505, 506,
507, 455, 508, 509, 510, 457, 511, 512, 513, 514, 515,
516, 517, 518, 519, 520, 521, 522, 523, 524]. Theoreti-
cally, the 4π - periodic CPR (69) has been proposed for
ferromagnetic weak links in quantum spin-Hall insu-
lator/superconductor structures under assumption of
the local fermion-parity conservation [440]. An explicit
calculation of the 4π - periodic CPR from a parity-
constraint free energy has been carried out in Ref.
[501]. A related fractional JE occurs when the MZMs
are spatially separated by a superconducting barrier
[494].
A number of
fermion parity.
studies have opted for non-
equilibrium dynamics as a more accessible alternative
to fixing the
[448]
has identified signatures of the fractional JE in
the finite-frequency current noise in a quantum
spin-Hall
insulator/superconductor structure with a
ferromagnetic barrier. Particular attention has been
paid to JJs between finite-length topological wires [495,
Reference
(71)
496, 497, 498, 514, 516, 519] where the hybridization
of the end MZMs opens a gap in the ABS spectrum,
rendering it 2π - periodic [495]. The fractional JE
is recovered by biasing the JJ and thereby inducing
the Landau-Zener transitions [496, 497, 498, 516,
519]. Several theoretical works have looked at the
Shapiro steps in the current-voltage characteristics of
dynamically driven JJs [496, 499, 502, 504, 512, 513,
517]. When a conventional JJ is exposed to an AC
field with frequency ω a DC voltage develops, showing
a series of steps at UDC = nω/2e, where n is an
integer [525]. For topological JJs, where the current
is carried by single electrons, the size of the Shapiro
steps is expected to be twice larger
UDC = nω/e = (2n)ω/2e,
which corresponds to the even steps of conventional
JJs.
That expectation has been tested in the
calculations using the resistively and capacitively
shunted junction (RCSJ) model
[496, 512, 513]
supplemented with an appropriate CPR. The even
steps were reproduced along with some additional
features, such as odd and fractional steps, depending
on the details of the input CPR and the parameter
Instead of the RCSJ model and adiabatic
choice.
analysis, Ref.
[517] has used the non-equilibrium
Green's functions technique revealing a crossover from
conventional Shapiro steps at high frequencies to a
pattern with the missing odd steps at low frequencies.
An applied bias leads to a finite lifetime and
dynamics of the occupation of the ABS due to its non-
adiabatic coupling to the continuum spectrum. As
argued in Refs. [502, 503], the 4π periodicity manifests
itself by an even-odd effect in Shapiro steps only if the
ABS lifetime is longer than the phase adjustment time
determined by the environment. However, another
indicator of the 4π periodicity, a peak in the current
noise spectrum at half the Josephson frequency, was
found to be more robust against the environment.
Qualitatively, the predicted noise spectrum is
seU/π
(72)
(ω ∓ eU/)2 + (seU/π)2 ,
S(ω) ∝
for ω ∓ eU/ (cid:28) eU/.
the usual Josephson frequency ω = ±eU/ which
manifest the fractional JE in the regime when the ABS
occupation switches faster than the phase adjustment
time (corresponding to a small parameter s (cid:28) 1 in the
equation above).
It has peaks at half
10.4. Equilibrium tests of the fractional JE
Driving JJs out of equilibrium brings about also
unwanted effects that may hinder access to the
topological physics. One of them is Joule overheating.
According to Ref.
it may be responsible for
[489],
CONTENTS
39
Figure 24.
Schematic of a topological JJ created by placing
two superconducting films across the edge of a 2DTI. The
spreading of the edge state into the 2DTI bulk (on length-scale
κ−1) results in the dependence of the Josephson transport on the
magnetic flux Φ enclosed in the effective junction area (indicated
by the dashed contour), which shows the 2Φ0 periodicity; w is
the width of the superconducting contact to the 2DTI.
higher order odd Shapiro steps seen in the experiments
(see, e.g., [486, 417, 487]), although all odd steps should
be missing in the fractional AC JE. Besides, Landau-
Zener tunneling between the 2π - periodic branches of
non-topological ABSs can emulate the fractional JE
(see, e.g., [499]). In order to rule out such a possibility
and avoid heating, it would also be desirable to be
able to test the fractional JE at equilibrium, ideally
when the topological ABSs are decoupled from the
continuum.
The difficulty is that the equilibrium CPR (67) is
2π periodic, as the two contributions there simply swap
upon a 2π phase advance. Although the fractional
JE cannot be easily inferred from such equilibrium
CPRs, they, nevertheless, diagnose unconventional
superconductivity in topological materials which has
become a subject of intense effort on its own [443,
526, 527, 500, 528, 529, 530, 531, 532, 533, 534,
535, 536, 537, 538, 539, 540, 541, 542, 543, 544, 545,
546, 425, 458, 547, 548, 549].
In order to trace
the fractional JE at equilibrium, one may look at
the effect of an external magnetic field. Reference
[505] has found an anomalous Fraunhofer pattern due
to hybridized Majorana channels [394] at the top
and bottom surfaces of a TI film. Another specific
interference effect has been proposed in Ref. [507] for
two finite-length 1D TSs forming a loop thread by a
magnetic flux. The 4π periodicity translates into the
magnetic-flux dependence with the period 2Φ0, where
Φ0 = h/2e is the magnetic flux quantum. However,
parity-switching events were found to spoil the 2Φ0
-periodicity of the critical current, causing instead a
behaviour similar to that in π - junctions.
Very often, wire-like TSs are treated as strictly
1D systems with zero width. This approximation
misses an orbital magnetic-field effect on the wire,
thereby overlooking a possible mechanism for the
2Φ0 periodicity in topological JJs
Let
consider a weak link between
us,
for example,
[523].
Figure 25. Critical current of topological edge JJs for different
values of the contact width w (see also Fig. 24 and [523]). The
topological 2Φ0 - spaced oscillations are clearly visible if w is not
too large compared to the edge-state width κ−1.
24).
the edge of a
two superconducting channels at
2DTI/superconductor hybrid (see Fig.
It
is essential that in real space the edge states are
quasi-2D, spreading exponentially into the 2DTI bulk.
For typical band-structure parameters of the inverted
HgTe quantum wells, the edge-state spreading can be
estimated as κ−1 ∼ 10 nm. This finite length-scale
makes a topological ABS nonlocal in the sense that it
picks up a magnetic flux, Φ, enclosed in the effective
area of the JJ. Qualitatively, the critical current is
given by
(cid:20)
e
2
(cid:18)
(cid:19)(cid:21)
Φ
Φ0
−κw,(73)
π
∆ + ∆κ cos
, ∆κ ∼ ∆e
Jc(Φ) ≈
where ∆ is the proximity-induced s - wave gap, while
∆κ accounts for the exponential spreading of the edge
state underneath the superconducting contact. A more
detailed analysis shows [523] that the 2Φ0 - spaced
oscillations of Jc(Φ) occur on top of a monotonic
decrease, as depicted in Fig.
25. The topological
ABS levels show similar oscillations due to the gauge
invariance of the 4π - periodic JE.
A different type of the magnetic-field dependence
Jc(B) has been predicted for semiconductor topological
JJs [514].
In that case, the Zeeman effect of the
applied field leads to magnetic oscillations of the
critical current indicating the splitting of the MZMs
in finite-length wires.
An external magnetic field can also modify the
shape of the equilibrium CPR J(φ), exposing the
hidden fractional JE despite the conventional 2π -
periodicity in φ. A recent example is the chiral CPR
proposed in Ref.
[524] for 2DTI-based JJs. This is a
CPR of the form
(cid:12)(cid:12)(cid:12)(cid:12)sin
(cid:12)(cid:12)(cid:12)(cid:12) ,
φ
2
J(φ) =
e∆
2 C
C = ±1,
(74)
Jclargerwsmallerw(cid:45)8(cid:45)6(cid:45)4(cid:45)202468(cid:70)(cid:70)00.51 CONTENTS
40
10.5. Beyond the 4π periodicity
So war, we have discussed the fractional JE associated
with a double ground state degeneracy leading to
a 4π periodicity due to the underlying MZMs. To
conclude this section,
let us mention an interesting
generalization of the 4π periodic JE which comes
into play when, in addition to Cooper pairing, other
electronic interaction are present.
Such electronic
interactions can cause further fermion fractionalization
due to induced many-body level splitting in topological
JJs. The theory [506] has proposed that electron-
electron interactions lead to a fourfold ground state
degeneracy and, consequently, to a 8π - periodic JE
associated with the weak tunneling of charge e/2
quasiparticles. A series of theoretical papers [509,
510, 511, 518] has addressed further aspects of electron
interactions and "fractional" MZMs in topological JJs.
11. Unconventional superconductivity
11.1. Mixed-parity superconducting order parameter.
Phenomenology
Intrinsic noncentrosymmetric superconductors (NCSs)
as well as many proximity structures of conventional
superconductors and topological materials
lack a
center of inversion symmetry. Such superconducting
systems do not fit into traditional classification of
superconducting states which invokes definite (even or
odd) spatial parity of the Cooper-pair wave function.
Two examples of odd-parity states, the kx + iky - and
kx - TSs, were discussed in the preceding sections.
Both intrinsic NCSs and the mentioned proximity
structures (dubbed, for convenience, 'proximity NCSs'
here) exhibit an antisymmetric SOC which mixes the
even-parity (spin-singlet) and the odd-parity (spin-
triplet) Cooper pairs, producing an unconventional,
mixed-parity superconducting order parameter.
Unambiguous verification of the mixed-parity
superconducting order remains one of the outstanding
challenges in the NCS research [551, 552, 553, 387,
554]. Among intriguing physical consequences of
the parity mixing are magnetoelectric effects [555]
manifested in the conversion of a charge current into
spin magnetization and vice versa (see, e.g., [556, 557,
558, 559]), the nonuniform (helical) superconducting
order [560, 561] as well as topological bulk and surface
properties (see recent reviews in Refs. [387] and [554]).
For intrinsic NCSs, candidate order parameters
can be classified according to their behaviour under
the symmetry elements (space group) of the crystal.
This is discussed extensively in literature (see, e.g.,
[562, 563, 551, 552, 554]). We will take a different
route and derive the mixed-parity order parameter
from a microscopic model for a proximity NCS. It
Figure 26.
Comparison between the chiral and ballistic
CPRs, Eqs.
(74) and (75), respectively. The arrows indicate
the discontinuities of the derivative J(cid:48)(φ) caused by the fermion
parity switching.
describing a unidirectional supercurrent with the
chirality C at T = 0.
Precisely speaking, C
coincides with the Chern number of the occupied
spin band of the 2DTI. Noteworthy is a non-analytic
phase dependence of Eq. (74) which clearly harbors
This
the 4π - periodic CPR J(φ) ∝ sin(φ/2).
non-analyticity reflects a discontinuous topological
transition associated with the change of the ground-
state fermion parity and is inherent to the fractional
JE. In Fig. 26, we compare the chiral CPR (74) with
the CPR of a 1D ballistic JJ at T = 0:
J(φ) =
e∆
2 sin
φ
2
sgn
cos
.
(75)
(cid:18)
(cid:19)
φ
2
The shape of this CPR is largely independent of the
type of the superconductors provided that the JJ is
fully transparent (cf. Refs.
[550] and [467]). The V-
shaped minima of the chiral CPR indicate the fermion
parity switching at 2π, 4π, ..., whereas the ballistic
CPR is continuous at these points (see Fig. 26).
The above discussion of topological weak super-
conductivity misses a number of factors that can be op-
erational in realistic topological JJs. The recent work
[521] has scrutinized the role of various realistic physi-
cal effects, such as a finite wire length, gap suppression,
non-topological Andreev bound states, or chemical po-
tential variations, in Majorana nanowire systems. As
argued in [521], the system may exhibit 2π or 4π JEs
or a combination of both, without a clear indication
of the topological physics or emphasizing only some
aspects of it. Only in a rather idealized situation (a
very long wire with no chemical potential fluctuations
or gap suppression) one could establish the 4π (resp.
2π) oscillations in the Josephson effect as being reliable
evidence for topological (resp. ordinary) superconduc-
tivity. These issues need to be understood better for
the JEs as diagnostics of topological or trivial super-
conducting states.
chiralCPRballisticCPRJ2Π4ΠΦ CONTENTS
41
Figure 27.
A pictorial representation of a mixed-parity
proximity effect in a SOC 2D material (2DM) contacted by a
conventional (s-wave singlet) superconductor (S). The in-plane
spin-momentum-locking facilitates conversion of singlet Cooper
pairs into a mixture of singlet and triplet states in the SOC 2DM.
is assumed that superconductivity is induced in a
2D SOC system by an overlying s - wave singlet
superconductor, as depicted in Fig.
27. We can,
for example, think of the surface of a 3DTI which
should exhibit a pronounced parity mixing owing to
extraordinary large SOC in these materials.
In such
proximity structures, the SOC forces the electron spins
in a tunneling singlet Cooper pair to follow the electron
momentum in the plane of the normal system, which
causes a spin flip, hence an admixture of spin-triplet
odd-parity Cooper pairs. Since each spin in a singlet
pair can be flipped, both up - and down - spin pairs
are induced with no net spin magnetization. This
phenomenology is behind many microscopic studies
of the proximity effect in systems with broken spin
rotation symmetry, such as Rashba systems and TI
materials[564, 565, 566, 567, 568, 569, 526, 570, 571,
572, 573, 574, 575, 537, 576, 577, 578, 538, 579, 580,
581, 582, 583, 584, 546, 585, 586, 425, 587, 549].
11.2. Theory of the mixed-parity proximity effect
More insight can be gained from the weak-coupling
model of the superconducting proximity effect used
earlier for various low-dimensional systems without
SOC (see, e.g., [588, 589, 590, 591, 592, 593, 594, 595])
and later for TI surface states (see, e.g., [565, 526,
573, 574]).
In this model, the proximity of the
superconductor is accounted for by a tunneling self-
energy ΣT in the equation of motion for the Green's
function of the normal system Gk:
[E−H(0)
k −ΣT ]Gk = I, H(0)
k =
, (76)
(cid:34)
(cid:35)
Hk
0
0 −H∗
−k
k
where H(0)
is the bare Hamiltonian of the normal
system in the Nambu representation, and I is the
(cid:20)
corresponding unit matrix. The self-energy is a matrix
in the Nambu space with the following structure
(cid:21)
.
(77)
ΣT =
−iΓ(E)
−∆∗(E)iσy −iΓ(E)
∆(E)iσy
Figure 28. Energy spectrum of a proximity NCS from Eqs.
(90) and Eqs. (91)
Its off-diagonal entries yield the induced singlet pair
potential, while the diagonal elements account for the
shift of the spectrum due to the tunneling:
Γ(E) = Γ0gS (E) = Γ0
, Γ0 = πT 2ρS , (78)
∆(E) = iΓ0fS (E) = iΓ0
.
(79)
E(cid:112)E2 − ∆2
∆S(cid:112)E2 − ∆2
S
S
(cid:35)
(cid:34)
Here, gS (E) and fS (E) are the momentum-integrated
quasiparticle and condensate Green functions of the
overlying superconductor which has the gap energy
∆S . The energy Γ0 is determined by the single-particle
tunneling rate depending on the normal-state density
of the states in the superconducting metal, ρS , and the
tunneling matrix element T . At low energies E (cid:28) ∆S ,
in the main approximation Γ = 0 and ∆ = Γ0, hence
the effective BdG Hamiltonian
Hk = H(0)
k + ΣT =
Hk
∆iσy
−∆iσy −H∗
−k
.
(80)
The normal system is described by a 2D Hamiltonian
Hk = σ · γk − µ,
with an antisymmetric SOC field γk.
(81)
The pair potential in the self-energy (77) should
not be confused with the induced order parameter.
The latter can be characterized by the matrix pair
amplitude (the anomalous average), which is a 2 × 2
spin matrix with the elements
(cid:68) c↑k(t)c↑−k(t)
c↓k(t)c↑−k(t)
(cid:69)
c↑k(t)c↓−k(t)
c↓k(t)c↓−k(t)
= f0(t, k)iσy
(82)
+ f (t, k) · σiσy.(83)
E(2)kE(1)kkFΔ CONTENTS
42
Figure 29. Schematic of the triplet pairing in a 2D proximity
NCS. There are two species of opposite-spin pairs in orbital
(kx ± iky) states.
the brackets
Here,
(cid:104)...(cid:105) denote the ground-state
expectation value. Also, we use the singlet-triplet
basis, with the singlet pair amplitude f0(t, k) and the
triplet vector
(cid:21)
(cid:20) f↓↓ − f↑↑
2
f (t, k) =
,
f↑↑ + f↓↓
2i
, f↑↓+↓↑
,
(84)
combining the amplitudes f↑↑(t, k), f↓↓(t, k), and
f↑↓+↓↑(t, k) of the triplet pair states with the total spin
projections Sz = 1,−1, and 0. In proximity NCSs, the
role of the f vector is similar to that of the Balian-
Wertheimer d vector in intrinsic NCSs.
All pairing amplitudes can be obtained from the
Green function of Eq. (76), which is the Nambu matrix
(cid:20) G(E, k) F (E, k)
(cid:21)
.
F †(E, k) G(E, k)
G(E, k) =
Here, each entry is a 2×2 matrix in spin space: G(E, k)
and G(E, k) are the quasiparticle Green functions,
while F (E, k) is the anomalous (condensate) Green
function given by
(85)
F (E, k) = [f0(E, k) + f (E, k) · σ]iσy,
where f0(E, k) and f (E, k) are the orbital amplitudes
for the singlet and triplet pairing at given energy. From
Eqs. (76) and (80) one readily finds (see, e.g., [582])
(86)
∆
Π(E, k)
2µ∆
f0(E, k) =
(E2 − µ2 − ∆2 − γ2
k),
γk,
Π(E, k)
f (E, k) = −
Π(E, k) = (cid:2)E2 − (µ − γk2 − ∆2(cid:3)
(cid:2)E2 − (µ + γk)2 − ∆2(cid:3) .
×
Noteworthy is the information about the energy
spectrum and the order parameter of a proximity NCS.
The energy spectrum is given by the roots of Π(E, k)
(89) and consists of two spin-split BCS-like branches
(cid:112)(µ − γk)2 + ∆2,
(cid:112)(µ + γk)2 + ∆2.
E(1)
k = ±
E(2)
k = ±
Figure 30.
(a) Current-voltage characteristics as a function of
magnetic field and temperature for Al/Bi2Te3/Al JJs (from Ref.
[425]). The curves are shifted in voltage by a value proportional
to the magnetic field. The dark points yield the magnetic pattern
of the JJ with a pronounced dip at B = 0. (b) Evolution of the
magnetic pattern shown in (a) as a function of the temperature.
The dip flattens out at a temperature close to 100 mK.
These are plotted in Fig.
28. As for the order
parameter, it has a mixed parity, with the even singlet
f0(E, k) (87) and odd triplet f (E, k) (88) components.
The triplet admixture is proportional to the induced
singlet pair potential ∆ and the SOC vector γk. That
is, the SOC converts some of the tunneling singlet pairs
into triplets, as depicted in Fig. 27. For example, for
the Rashba SOC with
(92)
γk = αso(k × z) = αso[ky,−kx, 0]
the f vector lies in the basal plane, describing
the equal-spin triplets with the orbital (kx ± iky)
symmetries (see also Fig. 29):
f↑↑,↓↓ ∝ αso(kx ∓ iky),
where αso is the SOC constant. The Sz = 0 triplet
is absent by time-reversal symmetry. A similar triplet
admixture occurs in intrinsic NCSs of the tetragonal
group [562, 386, 552]. We note that Eq. (88) is not
limited to the linear - in - k SOC. For example, the
theory [584] has discussed the role of the hexagonal
warping of the Fermi surface, which is relevant for the
surface states of tetradymite compounds.
f↑↓+↓↑ = 0,
(93)
The role of disorder deserves separate comment.
In dirty TIs, the p - wave component (88) was found
to be suppressed relative to the s - wave pairing
when the elastic mean-free path was much smaller
than the superconducting coherence length [574]. The
suppression is due to the generic nonlocality of the
odd-parity Cooper pairs, which makes them sensitive
to the electron mean-free path in a disordered system.
In cleaner TIs, however, the p -wave component can be
comparable to the s - wave one and should therefore be
observable despite the presence of a modest amount of
disorder (e.g., random impurity potential). Reference
[585] has developed the quasiclassical theory for the
proximity effect in impure Dirac materials. Non-
equilibrium Eilenberger and Usadel equations were
(87)
(88)
(89)
(90)
(91)
CONTENTS
43
or, explicitly,
f (E, k) =
2∆
Π(E, k)
[−µγk + Eh + iγk × h].
(97)
We have now two new contributions. The term linear
in energy E corresponds to the odd-frequency triplet
pairing found a while ago in proximity structures of
ferromagnets and s-wave superconductors [596, 597,
598]. Such odd-frequency Cooper pairs have the s-
wave spatial symmetry and are robust to disorder and
other spatial inhomogeneities, thus offering both new
interesting physics and application potential [599, 600].
The triplet component (97) was calculated in Ref.
[526]
for a TI surface state with the linear Dirac
spectrum. A growing body of work has been dealing
with different aspects of the odd-frequency pairing in
hybrid structures involving 3DTIs [572, 573, 576, 584,
587], 2DTI [577, 586] and related Rashba materials
[578, 581].
[586] has looked into
the emergence of the odd-frequency s-wave pairing at
the edge of a 2DTI without any magnetism.
In particular, Ref.
Also,
[603, 604]).
superconductors of various
The odd-frequency proximity effects have been
symmetry
studied for
classes [601, 602].
the connection to the
Majorana modes has been pointed out (see, e.g.,
Refs.
Various other findings have
been summarized in the review articles [597, 358,
605]. While the literature on the odd-frequency
superconductivity is abundant, the emergence and
physical consequences of the imaginary term in Eqs.
(96) and (97) have gone largely unnoticed. This type of
pairing is an analogue of the paradigmatic nonunitary
pairing in triplet superfluids [366] and superconductors
[606] with a complex triplet order parameter. We
elaborate on this point below.
11.4. Nonunitary triplet pairing and charge-spin
conversion
As mentioned above, the standard classification of the
Cooper pairing which invokes the Balian-Wertheimer
d vector is not applicable to proximity NCSs where
no pairing interaction takes place. For that purpose,
we employ the matrix condensate Green function
F (E, k) (86) which has proved useful
in diverse
proximity structures [597, 607, 571, 608, 609] and
driven superconductors [610].
the pairing
nonunitary if the product F F † is not proportional to
a unit spin matrix. Using Eq. (86), we find
0 f +f0f∗)·σ+(if×f∗)·σ, (98)
F F
where 1 stands for the unit spin matrix (the arguments
E and k are suppressed for brevity). The second and
third terms above indicate the nonunitary pairing due
† = (f02+f·f∗)1+(f
[366], we call
Following Ref.
∗
Figure 31.
Sketch of a JJ at the surface of Bi2Te3
to probe induced mixed-parity superconductivity (from Ref.
[425]). (a) The S electrodes (Al) induce a mixed s + p - wave
superconductivity at the surface of Bi2Te3 (only the (px + ipy)
- component is shown). In close proximity to low transparency
interfaces, the px + ipy symmetry changes to a py one. (b) Top
view of the device illustrating π coupling.
In the presence of
scattering, a quasi-particle trajectory emerging from the negative
py - lobe on one side of the JJ (blue arrow) couples to a trajectory
associated with the positive py - lobe on the other side of the JJ
(red arrow). In the case of a scattering-free transport, the quasi-
particle trajectories probe the same phase in both electrodes.
For more details, see Ref. [425].
derived to first order in quantities small compared to
the Fermi energy for Dirac edge and surface states with
spin-momentum locking.
The experiment [425] has reported an observation
of the induced unconventional superconductivity at
the surface of Bi2Te3 in phase-sensitive measurements
on nanoscale JJs. The magnetic field pattern of the
junctions was found to have a dip at zero applied
magnetic field (see Fig. 30), presumably, due to the
simultaneous existence of the 0 and π couplings across
the junction provided by a mixed s + p - wave order
parameter. The π coupling was attributed to the
combined effect of a sign-changing p - component of
the order parameter and scattering in the JJ (see also
Fig. 31).
11.3. Odd-frequency triplet superconductivity
Breaking the time-reversal symmetry enriches the un-
conventional proximity effect in topological materials.
An informative generalization of the above model is
achieved by adding an exchange (or Zeeman) spin field
h:
γ(cid:48)
k = γk + h.
The total spin field γ(cid:48)
momentum:
−k (cid:54)= γ(cid:48)
γ(cid:48)
k is no longer antisymmetric in
(94)
(95)
k,
which leads to the following generalization of the triplet
f vector in Eq. (88):
f (E, k) =
∆
Π(E, k)
[−µ(γ(cid:48)
k − γ(cid:48)
−k) + E(γ(cid:48)
+ iγ(cid:48)
k + γ(cid:48)
k × γ(cid:48)
−k],
−k)
(96)
CONTENTS
44
Figure 32.
Sketch of charge-spin conversion in a
SOC 2DM proximitized by a current-biased conventional
superconductor. An applied electric current generates an in-
plane spin polarization (cid:104)S(cid:105) ∝ if × f∗ reflecting the triplet
pairing with the total spin projection Sz = 0 on the SOC plane.
This can be interpreted as tilting the pair spins ↑ and ↓ such
that they acquire a common in-plane projection [see also Eqs.
(101) and (102)].
to the lack of inversion and time-reversal, respectively.
We are interested in the latter case where, by analogy
with triplet superfluids, Cooper pairs have a net spin
polarization:
(cid:104)S(cid:105) ∝ if × f∗
.
(99)
For example, for a 2D NCS in a perpendicular spin
field h, Eq.
(97) yields the following result for the
axial vector if × f∗ at the Fermi level:
if (0, k) × f∗(0, k) =
8µ∆2γ2
k
Π2(0, k)
h.
(100)
As expected, the pair spin polarization is parallel to
the spin field h, indicating an imbalance between the
equal-spin triplets ↑↑ and ↓↓ (see also Fig. 29).
In the above example, the f vector formalism
allows us to extend the notion of the nonunitary
pairing beyond its original context [366], viz. to treat
proximiy-induced superconductivity. Furthermore, the
nonunitary pairing does not generally require the spin
field h. The pair spin polarization if × f∗ can be
induced just by an electric current via charge-spin
conversion [582, 611]. To illustrate this point let us
consider the BdG Hamiltonian
(cid:21)
(cid:20) σ · γk+q − µ
∆iσy
,
−∆iσy
−(σ · γ−k+q − µ)∗
Hk =
where the wave-vector shift q accounts for the presence
of a superconducting phase gradient associated with a
dissipationless electric current. The current is applied
to the overlying superconductor and is weak enough to
disregard the depairing effects in ∆. The corresponding
triplet f vector is given by [582]
Figure 33. Vector plot of the pair spin polarization (102) for
the Rashba SOC. Vector if × f∗ shows the average polarization
(103).
where we used γ±k+q = ±γk + γq for any linear SOC.
The combined effect of the SOC and the supercurrent
produces a Zeeman-like field γq, thereby generating
both odd-frequency and nonunitary pairing akin to h.
Generally, the direction of γq depends on the type of
the structural or lattice asymmetry behind the SOC,
so does the pair spin polarization
8µ∆2
Π2(0, k)
if (0, k) × f∗(0, k) = −
γk × (γk × γq). (102)
For the Rashba SOC, the spin polarization is carried by
the triplet state with the total spin projection Sz = 0
on the SOC plane. Loosely speaking, the supercurrent
tilts the pair spins ↑ and ↓ such that they acquire
a common in-plane projection, as sketched in Fig.
32. Importantly, the spin polarization does not vanish
upon averaging over the directions of the wave vector
k. Using Eq. (92), one finds
if (0, k) × f∗(0, k) =
4µ∆2α3
sok2
Π2(0, k)
(q × z),
(103)
the
where the bar means the average value. This result just
means that an unpolarized charge current is converted
into spin magnetization of
superconducting
condensate, a form of the magnetoelectric effect
pioneered in normal metals [612] and studied later
in NCSs [556].
the magnetoelectric effect
refers to the spin magnetization induced by a phase
gradient of the order parameter, while in the inverse
magnetoelectric effect the magnetic polarization causes
charge and spin flows in a variety of situations [557,
613, 614, 615, 616, 617, 618, 619, 620, 535, 621,
622]. In both effects, the magnetoelectric coupling is
characterized by the SOC constant αso.
Here,
f (E, k) =
2∆
Π(E, k)
[−µγk + Eγq + iγk × γq],
(101)
Equation (103) resembles the current-induced
thermodynamic magnetization of a Rashba NCS [556,
qiff CONTENTS
45
557, 558, 559]. The averaged spin polarization retains
the dependence on the structural or lattice asymmetry.
For the Rashba SOC, the average polarization direction
is perpendicular to an applied supercurrent in the SOC
plane (see also Fig.
33). For NCSs of the cubic
crystal group we expect a different result. In this case,
the SOC vector is simply parallel to the momentum,
γk = αsok = αso[kx, ky, kz], and Eq. (102) yields the
following result
if (0, k) × f∗(0, k) =
16µ∆2α3
sok2
3Π2(0, k)
q.
(104)
As we see, in cubic NCSs the pair spin polarization is
locked parallel to the applied current.
The charge-spin conversion is an indicator of the
unconventional, mixed-parity order parameter. Still,
the direct magnetoelectric effect has not been verified
experimentally yet despite a diverse range of other
observed properties §. On the other hand, a growing
body of theoretical predictions may help in planning a
decisive experiment. Some specific predictions include
spin Hall effects and nonequilibrium spin accumulation
in superconducting structures [623, 624, 625, 542],
electrically controllable spin filtering in TI surfaces
states [581], equal-spin Andreev reflection due to the
induced nonunitary pairing [582, 611], magnetoelectric
0− π transitions in quantum spin Hall insulators [544],
the generation of a transverse spin supercurrent by a
charge supercurrent [626], and the long-range effect of
a Zeeman field on the electric current in an Andreev
interferometer [627].
12. Outlook
We give a brief overview of future directions. The
contrast between quantum anomalous Hall research,
which focuses on dissipationless transport at very
low temperatures, and spin-orbit
torque devices,
which are aiming for room-temperature operation, is
noteworthy. As a result of the latter several gaps
remain in our understanding of spin-orbit torques
at very low temperatures,
for example the role of
quantum interference effects such as weak localisation
and anti-localisation. The exact origin of the anti-
damping torque continues to be hotly debated, with
possibilities including the spin Hall effect, the Berry
curvature anomalous Hall term, which may however
be overwhelmed by disorder, and spin-orbit scattering
mechanisms that have not been fully explained. A
related question, to date unsettled, is whether it is
possible for an anti-damping torque to exist without
the spin-Hall effect.
in simple analytical models, the
§ A review article [554] gives a detailed account of the ongoing
theoretical and experimental studies of intrinsic NCSs.
final result to this question is very sensitive to the
starting Hamiltonian.
Furthermore, whereas the bulk of attention has
focused on ferromagnets, antiferromagnets are also
generating excitement [628, 629] and will no doubt
witness considerable growth. Traditional problems
from magnetism, such as current-driven domain wall
motion, have yet to take off in topological materials.
Spin-momentum locking offers new functionalities for
magneto-resistive devices such as spin valves, since
electrons travelling in a specific direction have a
fixed spin orientation determined by their momentum.
Experimentally, there is a lot of space to investigate
van der Waals heterostructures where experiments are
just beginning [630].
A fundamental gap in the theoretical approach to
spin-orbit torques as well as non-linear response is the
method used to handle the spin current.
It is well
known that in spin-orbit coupled systems the proper
definition of the spin current is not (1/2){si, vj}, where
s and v represent the spin and velocity operators
respectively, as that current is not conserved, but
(1/2)(d/dt){si, rj}, with r the position operator. This
is motivated by spin non-conservation in the presence
of spin-orbit coupling (an enlightening strategy for
circumventing these ambiguities is described in [631]).
Whereas the position operator is a difficult quantity to
handle, in particular in bases of Bloch states, in which
most such calculations are attempted, a complete
understanding of spin-orbit torques in topological
materials will remain elusive until the magnitude of
the proper spin current is determined.
Important unanswered questions in anomalous
Hall transport include the role of spin-charge cor-
relations, which has only recently begun to receive
attention [176]. Moreover, according to a number
of experiments, the sign of anomalous Hall conduc-
tivity can be the same [632, 633, 634] as or differ
[168, 632, 635, 636, 637] from that of the intrinsic con-
tribution [638, 639, 640, 641], depending on the mag-
netic doping concentration. This puzzling observation
is thus far unexplained. Likewise, the role of disor-
der in the anomalous Hall contribution due to Fermi
arcs in WSMs has not been elucidated. The anomalous
Hall effect is being explored in Dirac systems with spin,
pseudospin and valley degrees of freedom [642], whose
behaviour is qualitatively different from TIs. With the
possibility of achieving strong spin-orbit coupling in
graphene, one can envisage further research on this
topic. In skyrmions studies it is assumed the skyrmion
texture remains unaffected by the electrons at the in-
terface, an assumption that remains to be verified by
further research. Finally, anomalous Hall transport af-
fects Coulomb drag [643], which must be explored fur-
ther.
CONTENTS
46
The understanding of interband coherence effects
on the non-linear optical response is in its infancy.
This applies both to interband transitions induced
by Berry curvature terms as well as the role of
scattering, whether by disorder, phonons or magnons,
and the examination of effects known to be important
in transport such as skew scattering,
side-jump,
localisation and Kondo physics. To add to this, the
vast majority of work on optical systems has focused
on the case of an undoped conduction band, while
potential Fermi surface effects in doped systems have
not been explored.
Another exciting avenue for future research is the
exploration of chiral superconductivity, non-Abelian
excitations and unconventional Cooper pairing in
topological materials. These topics remain a subject
of intense experimental and theoretical effort. The
experimental quest for chiral superconductivity in
both intrinsic and proximity-induced superconductors
continues. Speaking of hybrid proximity structures,
we have seen that the chiral superconductivity can
be understood as the duality between a kx + iky
- superconductor and a Chern insulator.
Is there
more new physics beyond this intricate duality? The
answer to this question is not only of theoretical
interest, but may also uncover hitherto unexplored
routes towards topological quantum computation and
superconducting spintronics.
Acknowledgments
DC would like to thank Branislav Nikoli´c for a series
of
instructive discussions and to acknowledge the
stimulating input of Di Xiao, Shulei Zhang, Giovanni
Vignale, Allan MacDonald, and Oleg Tretiakov. YL
thanks N. Liu, X. F. Niu and Z. C. Wang for
technical assistance, and X. Dai, Z. Fang, K. He,
H. Z. Lu, A. D. Mirlin, S. Q. Shen, J. R. Shi,
H. M. Weng, P. Xiong and X. C. Xie for valuable
discussions. GT thanks Ulrich Eckern, Sebastian
Bergeret, Alexander Golubov, Yukio Tanaka and
Dieter Weiss for their valuable comments. This work
was supported by the Australian Research Council
Centre of Excellence in Future Low-Energy Electronics
Technologies funded by the Australian Government,
by the National Science Foundation of China (Project
61425015), National Basic Research Program
No.
of China (Project No.
2015CB921102), National
Key Research and Development Program (Project No.
2016YFA0300600), and Strategic Priority Research
Program of Chinese Academy of Sciences (Project
No. XDB28000000) and by the German Research
Foundation (DFG) through TRR 80.
References
[1] Ren Y, Qiao Z and Niu Q 2016 Rep. Prog. Phys. 79 066501
[2] Culcer D and Geresdi A 2019 arXiv:1907.02625
[3] Shen S Q 2017 Topological Insulators: Dirac Equation in
Condensed Matter (Singapore: Springer)
[4] Ando Y 2013 J. Phys. Soc. Jpn. 82 102001
[5] Armitage N, Mele E and Vishwanath A 2018 Rev. Mod.
Phys. 90 015001
[6] Xiao D, Liu G B, Feng W, Xu X and Yao W 2012 Phys.
Rev. Lett. 108(19) 196802
[7] Zhang G, Li X, Wu G, Wang J, Culcer D, Kaxiras E and
Zhang Z 2014 Nanoscale 6 3259
[8] Li X, Zhang G, Wu G, Chen H, Culcer D and Zhang Z
2013 Chin. Phys. B 22 097306
[9] Okugawa R and Murakami S 2014 Phys. Rev. B 89 235315
[10] Collins J L, Tadich A, Wu W, Gomes L C, Rodrigues
J N B, Liu C, Hellerstedt J, Ryu H, Tang S, Mo S K,
Adam S, Yang S A, Fuhrer M S and Edmonds M T 2018
Nature 564 390
[11] Rostami H, Guinea F, Polini M and Roldan R 2018 npj
2D Materials and Applications 2 15
[12] Wang Y, Zhu D, Wu Y, Yang Y, Yu J, Ramaswamy R,
Mishra R, Shi S, Elyasi M, Teo K L, Wu Y and Yang
H 2017 Nature Comm. 8 1364
[13] Avila J, Pearanda F, Prada E, San-Jose P and Aguado R
2018 arXiv:1807.04677
[14] Herring C 1937 Phys. Rev. 52(4) 365 -- 373 URL https:
//link.aps.org/doi/10.1103/PhysRev.52.365
[15] Berry M V and Wilkinson M 1984 Proceedings of the Royal
Society of London A. 392 15 -- 43
[16] Haldane F D M 1988 Phys. Rev. Lett. 61 2015
[17] Kane C L and Mele E J 2005 Phys. Rev. Lett. 95 226801
[18] Kane C 2013 Topological Insulators: Chapter 1. Topo-
logical Band Theory and the Z2 Invariant Contempo-
rary Concepts of Condensed Matter Science (Elsevier
Science) ISBN 9780128086827 URL https://books.
google.com.au/books?id=PawZDAAAQBAJ
[19] Bernevig B and Hughes T 2013 Topological Insulators
and Topological Superconductors (Princeton University
Press)
ISBN 9780691151755 URL https://books.
google.com.au/books?id=wOn7JHSSxrsC
[20] Nechaev I A and Krasovskii E E 2016 Phys. Rev. B 94
201410
[21] Yan B and Felser C 2017 Annual Review of Condensed
Matter Physics 8 337 -- 354 (Preprint https://doi.
org/10.1146/annurev-conmatphys-031016-025458)
URL
annurev-conmatphys-031016-025458
https://doi.org/10.1146/
[22] Goswami P and Tewari S 2013 Phys. Rev. B 88(24) 245107
URL https://link.aps.org/doi/10.1103/PhysRevB.
88.245107
[23] Chen Y, Wu S and Burkov A A 2013 Phys. Rev. B
88(12) 125105 URL https://link.aps.org/doi/10.
1103/PhysRevB.88.125105
[24] Zyuzin A A and Burkov A A 2012 Phys. Rev. B
86(11) 115133 URL https://link.aps.org/doi/10.
1103/PhysRevB.86.115133
[25] Kormanyos A, Zolyomi V, Drummond N D, Rakyta P,
Burkard G and Fal'ko V I 2013 Phys. Rev. B 88 045416
[26] Kormanyos A, G Burkard G, Gmitra M, Fabian J, Zolyomi
V and Falko N D D V 2015 2D Materials 2 022001
[27] Gong Z, Liu G B, Yu H, Xiao D, Cui X, Xu X and Yao W
2013 Nature Commun. 4 2053
[28] Culcer D, Sekine A and MacDonald A H 2017 Phys. Rev.
B 96 035106
[29] Sekine A, Culcer D and MacDonald A H 2017 Phys. Rev.
B 96 235134
[30] Li Q, Rossi E and Das Sarma S 2012 Phys. Rev. B 86
235443
CONTENTS
47
[31] Xiao C, Xiong B and Xue F 2018 J. Phys.: Condens.
Matter 30 415002
[32] He H T, Wang G, Zhang T, Sou I K, Wong G K L, Wang
J N, Lu H Z, Shen S Q and Zhang F C 2011 Phys. Rev.
Lett. 106(16) 166805
[33] Lu H Z, Shi J and Shen S Q 2011 Phys. Rev. Lett. 107(7)
076801
[34] Shan W Y, Lu H Z and Shen S Q 2012 Phys. Rev. B
86(12) 125303
[35] Lu H Z and Shen S Q 2014 Phys. Rev. Lett. 112(14)
146601
[36] Liu W E, Liu H and Culcer D 2014 Phys. Rev. B 89 195417
[37] Adroguer P, Liu W E, Culcer D and Hankiewicz E M 2015
Phys. Rev. B 92 241402
[38] Liu W E, Hankiewicz E M and Culcer D 2017 Phys. Rev.
B 96 045307
[39] Liu W E, Hankiewicz E M and Culcer D 2017 Materials
10 807
[40] Culcer D 2011 Phys. Rev. B 84(23) 235411
[41] Nandy S and Sodemann I 2019 arXiv 1901:04467
[42] Kane C L and Mele E J 2005 Phys Rev Lett 95 146802
ISSN 0031-9007 (Print) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/16241681
[43] Kane C L and Mele E J 2005 Phys. Rev. Lett.
95(22) 226801 URL https://link.aps.org/doi/10.
1103/PhysRevLett.95.226801
[44] Bernevig B A, Hughes T L and Zhang S C 2006 Science
314 1757 -- 1761 ISSN 0036-8073
[45] Koenig M, Wiedmann S, Brune C, Roth A, Buhmann
H, Molenkamp L W, Qi X L and Zhang S C 2007
Science 318 766 -- 70 ISSN 1095-9203 (Electronic) 0036-
8075 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/17885096
[46] Roth A, Brune C, Buhmann H, Molenkamp L W, Maciejko
J, Qi X L and Zhang S C 2009 Science 325 294 -- 7
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/19608911
[47] Schopfer F and Poirier W 2007 Journal of Applied Physics
102 054903 URL https://aip.scitation.org/doi/
abs/10.1063/1.2776371
[48] Jiang H, Cheng S, Sun Q F and Xie X C 2009 Phys
Rev Lett 103 036803 ISSN 0031-9007 (Print) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/19659306
[49] Vayrynen J I, Goldstein M and Glazman L I 2013 Phys
Rev Lett 110 216402 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/23745899
[50] Vayrynen J I, Goldstein M, Gefen Y and Glazman L I
2014 Physical Review B 90 ISSN 1098-0121 URL
<GotoISI>://WOS:000342127700004
[51] Ma E Y, Calvo M R, Wang J, Lian B, Muhlbauer M,
Brune C, Cui Y T, Lai K, Kundhikanjana W, Yang Y,
Baenninger M, Konig M, Ames C, Buhmann H, Leubner
P, Molenkamp L W, Zhang S C, Goldhaber-Gordon D,
Kelly M A and Shen Z X 2015 Nat Commun 6 7252
ISSN 2041-1723 (Electronic) 2041-1723 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/26006728
[52] Gusev G M, Kvon Z D, Shegai O A, Mikhailov
N N, Dvoretsky S A and Portal J C 2011 Physical
Review B 84 ISSN 1098-0121 URL <GotoISI>://WOS:
000294777400001
[53] Liu C, Hughes T L, Qi X L, Wang K and Zhang S C
2008 Phys Rev Lett 100 236601 ISSN 0031-9007 (Print)
0031-9007 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/18643529
[54] Knez I, Du R R and Sullivan G 2011 Phys Rev
Lett 107 136603 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/22026882
[55] Du L, Knez I, Sullivan G and Du R R 2015 Phys Rev
Lett 114 096802 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/25793839
[56] Li C A, Zhang S B and Shen S Q 2018 Physical
Review B 97 ISSN 2469-9950 URL <GotoISI>://WOS:
000423121900005
[57] Skolasinski R, Pikulin D I, Alicea J and Wimmer M
2018 Physical Review B 98 ISSN 2469-9950 URL
<GotoISI>://WOS:000450139700005
[58] Hart S, Ren H, Wagner T, Leubner P, Muhlbauer M,
Brune C, Buhmann H, Molenkamp L and Yacoby A
2014 Nature Physics 10 638 -- 643 ISSN 1745-2473 URL
<GotoISI>://WOS:000341820700015
[59] Nichele F, Suominen H J, Kjaergaard M, Marcus C M,
Sajadi E, Folk J A, Qu F M, Beukman A J A, de Vries
F K, van Veen J, Nadj-Perge S, Kouwenhoven L P,
Nguyen B M, Kiselev A A, Yi W, Sokolich M, Manfra
M J, Spanton E M and Moler K A 2016 New Journal
of Physics 18 ISSN 1367-2630 URL <GotoISI>://WOS:
000388580400001
[60] Akiho T, Irie H, Onomitsu K and Muraki K 2019 Physical
Review B 99 ISSN 2469-9950 URL <GotoISI>://WOS:
000462900200001
[61] Shojaei B, McFadden A P, Pendharkar M, Lee J S,
Flatte M E and Palmstrom C J 2018 Physical Review
Materials 2 ISSN 2475-9953 URL <GotoISI>://WOS:
000434770100001
[62] Liu C C, Feng W and Yao Y 2011 Phys Rev
Lett 107 076802 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/21902414
[63] Xu Y, Yan B, Zhang H J, Wang J, Xu G, Tang P, Duan
W and Zhang S C 2013 Phys Rev Lett 111 136804
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/24116803
[64] Reis F, Li G, Dudy L, Bauernfeind M, Glass S, Hanke
W, Thomale R, Schafer J and Claessen R 2017
Science 357 287 -- 290 ISSN 1095-9203 (Electronic) 0036-
8075 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/28663438
[65] Weng H, Dai X and Fang Z 2014 Physical Review X 4
ISSN 2160-3308
[66] Qian X, Liu J, Fu L and Li J 2014 Science 346 1344 -- 7
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/25504715
[67] Yang F, Miao L, Wang Z F, Yao M Y, Zhu F, Song Y R,
Wang M X, Xu J P, Fedorov A V, Sun Z, Zhang G B,
Liu C, Liu F, Qian D, Gao C L and Jia J F 2012 Phys
Rev Lett 109 016801 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/23031123
[68] Ren Y, Qiao Z and Niu Q 2016 Rep Prog Phys 79 066501
ISSN 1361-6633 (Electronic) 0034-4885 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/27176924
[69] Zhu F F, Chen W J, Xu Y, Gao C L, Guan D D,
Liu C H, Qian D, Zhang S C and Jia J F 2015
Nat Mater 14 1020 -- 5 ISSN 1476-1122 (Print) 1476-
1122 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/26237127
[70] Drozdov I K, Alexandradinata A, Jeon S, Nadj-Perge S,
Ji H W, Cava R J, Bernevig B A and Yazdani A
2014 Nature Physics 10 664 -- 669 ISSN 1745-2473 URL
<GotoISI>://WOS:000341820700020
[71] Takayama A, Sato T, Souma S, Oguchi T and Takahashi
T 2015 Phys Rev Lett 114 066402 ISSN 1079-7114
(Electronic) 0031-9007 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/25723232
[72] Tang S J, Zhang C F, Wong D, Pedramrazi Z, Tsai H Z,
Jia C J, Moritz B, Claassen M, Ryu H, Kahn S, Jiang
CONTENTS
48
J, Yan H, Hashimoto M, Lu D H, Moore R G, Hwang
C C, Hwang C, Hussain Z, Chen Y L, Ugeda M M,
Liu Z, Xie X M, Devereaux T P, Crommie M F, Mo
S K and Shen Z X 2017 Nature Physics 13 683 -- + ISSN
1745-2473 URL <GotoISI>://WOS:000404629900018
[73] Peng L, Yuan Y, Li G, Yang X, Xian J J, Yi C J, Shi
Y G and Fu Y S 2017 Nat Commun 8 659 ISSN 2041-
1723 (Electronic) 2041-1723 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/28939864
[74] Fei Z Y, Palomaki T, Wu S F, Zhao W J, Cai X H, Sun
B S, Nguyen P, Finney J, Xu X D and Cobden D H
2017 Nature Physics 13 677 -- + ISSN 1745-2473 URL
<GotoISI>://WOS:000404629900017
[75] Wu R, Ma J Z, Nie S M, Zhao L X, Huang X, Yin J X, Fu
B B, Richard P, Chen G F, Fang Z, Dai X, Weng H M,
Qian T, Ding H and Pan S 2016 Physical Review X 6
ISSN 2160-3308
[76] Li X B, Huang W K, Lv Y Y, Zhang K W, Yang C L,
Zhang B B, Chen Y B, Yao S H, Zhou J, Lu M H,
Sheng L, Li S C, Jia J F, Xue Q K, Chen Y F and
Xing D Y 2016 Phys Rev Lett 116 176803 ISSN 1079-
7114 (Electronic) 0031-9007 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/27176532
[77] Shi Y, Kahn J, Niu B, Fei Z, Sun B, Cai X, Francisco B A,
Wu D, Shen Z X, Xu X, Cobden D H and Cui Y T 2019
Sci Adv 5 eaat8799 ISSN 2375-2548 (Electronic) 2375-
2548 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/30783621
[78] Wu S, Fatemi V, Gibson Q D, Watanabe K, Taniguchi T,
Cava R J and Jarillo-Herrero P 2018 Science 359 76 -- 79
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/29302010
[79] Tang F, Ren Y, Wang P, Zhong R, Schneeloch J, Yang
S A, Yang K, Lee P A, Gu G, Qiao Z and Zhang L
2019 Nature 569 537 -- 541 ISSN 1476-4687 (Electronic)
0028-0836 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/31068693
[80] Hasan M Z and Kane C L 2010 Reviews of Modern Physics
82 3045 -- 3067 ISSN 0034-6861 1539-0756
[81] Qi X L and Zhang S C 2011 Reviews of Modern Physics
83 1057 -- 1110 ISSN 0034-6861 1539-0756
[82] Ando Y 2013 Journal of the Physical Society of Japan 82
ISSN 0031-9015 1347-4073
[83] Hsieh D, Qian D, Wray L, Xia Y, Hor Y S, Cava R J
and Hasan M Z 2008 Nature 452 970 -- 4 ISSN 1476-
4687 (Electronic) 0028-0836 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/18432240
[84] Zhang H, Liu C X, Qi X L, Dai X, Fang Z and Zhang
S C 2009 Nature Physics 5 438 -- 442 ISSN 1745-2473
1745-2481
[85] Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2010
Physical Review B 82 ISSN 1098-0121 1550-235X
[86] Jia S, Ji H, Climent-Pascual E, Fuccillo M K, Charles M E,
Xiong J, Ong N P and Cava R J 2011 Physical Review
B 84 ISSN 1098-0121 1550-235X
[87] Yang W M, Lin C J, Liao J and Li Y Q 2013 Chinese
Physics B 22 ISSN 1674-1056
[88] Zhang J, Chang C Z, Zhang Z, Wen J, Feng X, Li K, Liu
M, He K, Wang L, Chen X, Xue Q K, Ma X and Wang Y
2011 Nat Commun 2 574 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/22146393
[89] Kong D, Chen Y, Cha J J, Zhang Q, Analytis J G, Lai K,
Liu Z, Hong S S, Koski K J, Mo S K, Hussain Z, Fisher
I R, Shen Z X and Cui Y 2011 Nat Nanotechnol 6 705 -- 9
ISSN 1748-3395 (Electronic) 1748-3387 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/21963714
[90] Ren Z, Taskin A A, Sasaki S, Segawa K and Ando Y 2011
Physical Review B 84 ISSN 1098-0121 1550-235X
[91] Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil
A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009
Nature Physics 5 398 -- 402 ISSN 1745-2473 1745-2481
[92] Chen Y L, Chu J H, Analytis J G, Liu Z K, Igarashi K,
Kuo H H, Qi X L, Mo S K, Moore R G, Lu D H,
Hashimoto M, Sasagawa T, Zhang S C, Fisher I R,
Hussain Z and Shen Z X 2010 Science 329 659 -- 62
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/20689013
[93] Roushan P, Seo J, Parker C V, Hor Y S, Hsieh D, Qian
D, Richardella A, Hasan M Z, Cava R J and Yazdani A
2009 Nature 460 1106 -- 9 ISSN 1476-4687 (Electronic)
0028-0836 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/19668187
[94] Zhang T, Cheng P, Chen X, Jia J F, Ma X, He K, Wang
L, Zhang H, Dai X, Fang Z, Xie X and Xue Q K 2009
Phys Rev Lett 103 266803 ISSN 1079-7114 (Electronic)
0031-9007 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/20366330
[95] Alpichshev Z, Analytis J G, Chu J H, Fisher I R, Chen
Y L, Shen Z X, Fang A and Kapitulnik A 2010 Phys
Rev Lett 104 016401 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/20366373
[96] Cheng P, Song C, Zhang T, Zhang Y, Wang Y, Jia J F,
Wang J, Wang Y, Zhu B F, Chen X, Ma X, He K,
Wang L, Dai X, Fang Z, Xie X, Qi X L, Liu C X,
Zhang S C and Xue Q K 2010 Phys Rev Lett 105 076801
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/20868065
[97] Dai J, West D, Wang X, Wang Y, Kwok D, Cheong S W,
Zhang S B and Wu W 2016 Phys Rev Lett 117 106401
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/27636482
[98] Qu D X, Hor Y S, Xiong J, Cava R J and Ong N P 2010
Science 329 821 -- 4 ISSN 1095-9203 (Electronic) 0036-
8075 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/20671155
[99] Analytis J G, McDonald R D, Riggs S C, Chu J H,
Boebinger G S and Fisher I R 2010 Nature Physics 6
960 -- 964 ISSN 1745-2473 1745-2481
[100] Xiong J, Petersen A C, Qu D, Hor Y S, Cava R J and
Ong N P 2012 Physica E: Low-dimensional Systems
and Nanostructures 44 917 -- 920 ISSN 13869477
[101] Peng H, Lai K, Kong D, Meister S, Chen Y, Qi X L,
Zhang S C, Shen Z X and Cui Y 2010 Nat Mater 9
225 -- 9 ISSN 1476-1122 (Print) 1476-1122 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/20010826
[102] Altshuler B, Aronov A and Spivak B 1981 JETP Letters
33 94
[103] Yu S D and V S Y 1981 JETP Letters 34 272 -- 275
[104] Bachtold A, Strunk C, Salvetat J P, Bonard J M, Forr
L, Nussbaumer T and Schnenberger C 1999 Nature
397 673 -- 675 ISSN 0028-0836 1476-4687 URL https:
//doi.org/10.1038/17755
[105] Washburn S and Webb R A 1986 Advances in Physics 35
375 -- 422 ISSN 0001-8732 1460-6976
[106] Zhang Y and Vishwanath A 2010 Phys Rev Lett
105 206601
0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/21231253
ISSN 1079-7114
(Electronic)
[107] Bardarson J H, Brouwer P W and Moore J E 2010 Phys
Rev Lett 105 156803 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/21230927
[108] Jauregui L A, Pettes M T, Rokhinson L P, Shi L and
Chen Y P 2016 Nat Nanotechnol 11 345 -- 51 ISSN 1748-
3395 (Electronic) 1748-3387 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/26780658
[109] Hong S S, Zhang Y, Cha J J, Qi X L and Cui Y 2014
Nano Lett 14 2815 -- 21 ISSN 1530-6992 (Electronic)
CONTENTS
49
1530-6984 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/24679125
[110] Cho S, Dellabetta B, Zhong R, Schneeloch J, Liu T, Gu G,
Gilbert M J and Mason N 2015 Nat Commun 6 7634
ISSN 2041-1723 (Electronic) 2041-1723 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/26158768
[111] Hikami S, Larkin A I and Nagaoka Y 1980 Progress of
Theoretical Physics 63 707 -- 710 ISSN 0033-068X 1347-
4081
[112] Bergmann G 1984 Physics Reports-Review Section of
Physics Letters 107 1 -- 58 ISSN 0370-1573 URL
<GotoISI>://WOS:A1984TA69300001
[113] Chakravarty S and Schmid A 1986 Physics Reports 140
193 -- 236 ISSN 03701573
[114] Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M,
Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H,
Li Y Q and Lu L 2010 Phys Rev Lett 105 176602
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/21231064
[115] Kim Y S, Brahlek M, Bansal N, Edrey E, Kapilevich G A,
Iida K, Tanimura M, Horibe Y, Cheong S W and Oh S
2011 Physical Review B 84 ISSN 1098-0121 1550-235X
[116] King P D, Hatch R C, Bianchi M, Ovsyannikov R,
Lupulescu C, Landolt G, Slomski B, Dil J H, Guan
D, Mi J L, Rienks E D, Fink J, Lindblad A, Svensson
S, Bao S, Balakrishnan G, Iversen B B, Osterwalder
J, Eberhardt W, Baumberger F and Hofmann P 2011
Phys Rev Lett 107 096802 ISSN 1079-7114 (Electronic)
0031-9007 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/21929260
[117] Suzuura H and Ando T 2002 Phys Rev Lett 89 266603
ISSN 0031-9007 (Print) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/12484845
[118] Garate I and Glazman L 2012 Physical Review B 86 ISSN
1098-0121 1550-235X
[119] Lin C J, He X Y, Liao J, Wang X X, Iv V S, Yang W M,
Guan T, Zhang Q M, Gu L, Zhang G Y, Zeng C G, Dai
X, Wu K H and Li Y Q 2013 Physical Review B 88
ISSN 1098-0121 1550-235X
[120] Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H
and Li Y Q 2011 Physical Review B 83 ISSN 1098-0121
1550-235X
[121] Zhang G, Qin H, Chen J, He X, Lu L, Li Y and Wu K
2011 21 2351 -- 2355 ISSN 1616-301X
[122] Checkelsky J G, Hor Y S, Cava R J and Ong N P 2011
Phys Rev Lett 106 196801 ISSN 1079-7114 (Electronic)
0031-9007 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/21668185
[123] Steinberg H, Lalo J B, Fatemi V, Moodera J S and Jarillo-
Herrero P 2011 Physical Review B 84 ISSN 1098-0121
1550-235X
[124] Kim D, Syers P, Butch N P, Paglione J and Fuhrer M S
2013 Nat Commun 4 2040 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/23800708
[125] Brahlek M, Koirala N, Salehi M, Bansal N and Oh S 2014
Phys Rev Lett 113 026801 ISSN 1079-7114 (Electronic)
0031-9007 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/25062217
[126] Liao J, Ou Y, Liu H, He K, Ma X, Xue Q K and Li Y 2017
Nat Commun 8 16071 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/28695894
[127] Xu Y, Miotkowski I, Liu C, Tian J, Nam H, Alidoust N,
Hu J, Shih C K, Hasan M Z and Chen Y P 2014 Nature
Physics 10 956 -- 963 ISSN 1745-2473 1745-2481
[128] Yoshimi R, Tsukazaki A, Kozuka Y, Falson J, Takahashi
K S, Checkelsky J G, Nagaosa N, Kawasaki M and
Tokura Y 2015 Nat Commun 6 6627 ISSN 2041-1723
(Electronic) 2041-1723 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/25868494
[129] Xu Y, Miotkowski I and Chen Y P 2016 Nat Com-
mun 7 11434 ISSN 2041-1723 (Electronic) 2041-
1723 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/27142344
[130] Koirala N, Brahlek M, Salehi M, Wu L, Dai J, Waugh J,
Nummy T, Han M G, Moon J, Zhu Y, Dessau D, Wu
W, Armitage N P and Oh S 2015 Nano Lett 15 8245 -- 9
ISSN 1530-6992 (Electronic) 1530-6984 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/26583739
[131] Moon J, Koirala N, Salehi M, Zhang W, Wu W and
Oh S 2018 Nano Lett 18 820 -- 826 ISSN 1530-6992
(Electronic) 1530-6984 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/29313354
[132] Xie F, Zhang S, Liu Q, Xi C, Kang T T, Wang R, Wei
B, Pan X C, Zhang M, Fei F, Wang X, Pi L, Yu G L,
Wang B and Song F 2019 Physical Review B 99 ISSN
2469-9950 2469-9969
[133] Taskin A A, Legg H F, Yang F, Sasaki S, Kanai Y,
Matsumoto K, Rosch A and Ando Y 2017 Nature
Comm. 8 1340
[134] Chiba T, Takahashi S and Bauer G E W 2017 Phys. Rev.
B 95 094428
[135] Scharf B, Matos-Abiague A, Han J E, Hankiewicz E M
and Zutic I 2016 Phys. Rev. Lett. 117 166806
[136] Huang H, Gu J, Ji P, Wang Q, Hu X, Qin Y, Wang J
and Zhang C 2018 Applied Physics Letters 113 ISSN
0003-6951 1077-3118
[137] Wu B, Pan X C, Wu W, Fei F, Chen B, Liu Q, Bu H, Cao
L, Song F and Wang B 2018 Applied Physics Letters
113 ISSN 0003-6951 1077-3118
[138] Nandy S, Sharma G, Taraphder A and Tewari S 2017 Phys
Rev Lett 119 176804 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/29219428
[139] Nandy S, Taraphder A and Tewari S 2018 Sci. Rep. 8
14983
[140] Huang X, Zhao L, Long Y, Wang P, Chen D, Yang Z,
Liang H, Xue M, Weng H, Fang Z, Dai X and Chen G
2015 Physical Review X 5 ISSN 2160-3308
[141] Burkov A A 2017 Physical Review B 96 ISSN 2469-9950
URL <GotoISI>://WOS:000405184900001
[142] Dai X, Du Z Z and Lu H Z 2017 Phys Rev Lett 119 166601
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/29099204
[143] Taskin A A, Legg H F, Yang F, Sasaki S, Kanai
Y, Matsumoto K, Rosch A and Ando Y 2017 Nat
Commun 8 1340 ISSN 2041-1723 (Electronic) 2041-
1723 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/29109397
[144] Qi X L, Hughes T L and Zhang S C 2008 Physical
Review B 78 ISSN 1098-0121 URL <GotoISI>://WOS:
000262607800110
[145] Qi X L, Li R, Zang J and Zhang S C 2009
Science 323 1184 -- 7 ISSN 1095-9203 (Electronic) 0036-
8075 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/19179491
[146] Wu L, Salehi M, Koirala N, Moon J, Oh S and Armitage
N P 2016 Science 354 1124 -- 1127 ISSN 1095-9203
(Electronic) 0036-8075 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/27934759
[147] Dziom V, Shuvaev A, Pimenov A, Astakhov G V, Ames
C, Bendias K, Bottcher J, Tkachov G, Hankiewicz E M,
Brune C, Buhmann H and Molenkamp L W 2017 Nat
Commun 8 15197 ISSN 2041-1723 (Electronic) 2041-
1723 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/28504268
[148] Okada K N, Takahashi Y, Mogi M, Yoshimi R, Tsukazaki
A, Takahashi K S, Ogawa N, Kawasaki M and
Tokura Y 2016 Nat Commun 7 12245 ISSN 2041-1723
CONTENTS
50
(Electronic) 2041-1723 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/27436710
[149] Thouless D J, Kohmoto M, Nightingale M P and den Nijs
M 1982 Physical Review Letters 49 405 -- 408 ISSN 0031-
9007
[150] Klass U, Dietsche W, Vonklitzing K and Ploog K 1992
Surface Science 263 97 -- 99 ISSN 0039-6028 URL
<GotoISI>://WOS:A1992HF18600018
[151] Ado I A, Dmitriev I A, Ostrovsky P M and Titov M 2015
EPL (Europhysics Letters) 111 ISSN 0295-5075 1286-
4854
[152] Lu H Z, Shi J and Shen S Q 2011 Phys Rev
Lett 107 076801 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/21902413
[153] He K, Wang Y and Xue Q K 2018 Annual Review of
Condensed Matter Physics 9 329 -- 344 ISSN 1947-5454
1947-5462
[154] Tokura Y, Yasuda K and Tsukazaki A 2019 Nature
Reviews Physics 1 126 -- 143 ISSN 2522-5820
[155] Yu R, Zhang W, Zhang H J, Zhang S C, Dai X and Fang
Z 2010 Science 329 61 -- 4 ISSN 1095-9203 (Electronic)
0036-8075 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/20522741
[156] Xu S Y, Neupane M, Liu C, Zhang D, Richardella
A, Andrew Wray L, Alidoust N, Leandersson M,
Balasubramanian T, Snchez-Barriga J, Rader O,
Landolt G, Slomski B, Hugo Dil J, Osterwalder J,
Chang T R, Jeng H T, Lin H, Bansil A, Samarth N
and Zahid Hasan M 2012 Nature Physics 8 616 -- 622
ISSN 1745-2473 1745-2481
[157] Chang C Z, Zhang J, Liu M, Zhang Z, Feng X, Li K,
Wang L L, Chen X, Dai X, Fang Z, Qi X L, Zhang
S C, Wang Y, He K, Ma X C and Xue Q K 2013 Adv
Mater 25 1065 -- 70 ISSN 1521-4095 (Electronic) 0935-
9648 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/23334936
[158] Chang C Z, Zhao W, Kim D Y, Zhang H, Assaf B A,
Heiman D, Zhang S C, Liu C, Chan M H and Moodera
J S 2015 Nat Mater 14 473 -- 7 ISSN 1476-1122 (Print)
1476-1122 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/25730394
[159] Lee I, Kim C K, Lee J, Billinge S J L, Zhong R,
Schneeloch J A, Liu T, Valla T, Tranquada J M,
Gu G and Davis J C S 2015 Proceedings of
the
National Academy of Sciences 112 1316 -- 1321 ISSN
0027-8424 (Preprint https://www.pnas.org/content/
112/5/1316.full.pdf) URL https://www.pnas.org/
content/112/5/1316
[160] Chang C Z, Zhang J, Feng X, Shen J, Zhang Z, Guo M, Li
K, Ou Y, Wei P, Wang L L, Ji Z Q, Feng Y, Ji S, Chen
X, Jia J, Dai X, Fang Z, Zhang S C, He K, Wang Y,
Lu L, Ma X C and Xue Q K 2013 Science 340 167 -- 70
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/23493424
[161] Fox E J, Rosen I T, Yang Y, Jones G R, Elmquist R E,
Kou X, Pan L, Wang K L and Goldhaber-Gordon D
2018 Phys Rev B 98 ISSN 2469-9950 (Print) URL
https://www.ncbi.nlm.nih.gov/pubmed/30984899
[162] Gtz M, Fijalkowski K M, Pesel E, Hartl M, Schreyeck
S, Winnerlein M, Grauer S, Scherer H, Brunner K,
Gould C, Ahlers F J and Molenkamp L W 2018 Applied
Physics Letters 112 ISSN 0003-6951 1077-3118
[163] Mogi M, Yoshimi R, Tsukazaki A, Yasuda K, Kozuka Y,
Takahashi K S, Kawasaki M and Tokura Y 2015 Applied
Physics Letters 107 ISSN 0003-6951 1077-3118
[164] Ou Y, Liu C, Jiang G, Feng Y, Zhao D, Wu W, Wang
X X, Li W, Song C, Wang L L, Wang W, Wu W, Wang
Y, He K, Ma X C and Xue Q K 2018 Adv Mater 30
ISSN 1521-4095 (Electronic) 0935-9648 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/29125706
[165] Mogi M, Kawamura M, Yoshimi R, Tsukazaki A, Kozuka
Y, Shirakawa N, Takahashi K S, Kawasaki M and
Tokura Y 2017 Nat Mater 16 516 -- 521 ISSN 1476-1122
(Print) 1476-1122 (Linking) URL https://www.ncbi.
nlm.nih.gov/pubmed/28191899
[166] Mogi M, Kawamura M, Tsukazaki A, Yoshimi R,
Takahashi K S, Kawasaki M and Tokura Y 2017 Sci
Adv 3 eaao1669 ISSN 2375-2548 (Electronic) 2375-
2548 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/28989967
[167] Xiao D, Jiang J, Shin J H, Wang W, Wang F, Zhao
Y F, Liu C, Wu W, Chan M H W, Samarth N and
Chang C Z 2018 Phys Rev Lett 120 056801 ISSN 1079-
7114 (Electronic) 0031-9007 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/29481164
[168] Checkelsky J G, Ye J, Onose Y, Iwasa Y and Tokura Y
2012 Nature Physics 8 729 EP -- URL https://doi.
org/10.1038/nphys2388
[169] Zhang D, Richardella A, Rench D W, Xu S Y, Kandala A,
Flanagan T C, Beidenkopf H, Yeats A L, Buckley B B,
Klimov P V, Awschalom D D, Yazdani A, Schiffer P,
Hasan M Z and Samarth N 2012 Physical Review B 86
ISSN 1098-0121 1550-235X
[170] Zhang M, Lv L, Wei Z, Yang L, Yang X and Zhao Y 2014
International Journal of Modern Physics B 28 ISSN
0217-9792 1793-6578
[171] Sanchez-Barriga J, Varykhalov A, Springholz G, Steiner
H, Kirchschlager R, Bauer G, Caha O, Schierle E,
Weschke E, Unal A A, Valencia S, Dunst M, Braun
J, Ebert H, Minar J, Golias E, Yashina L V, Ney
A, Holy V and Rader O 2016 Nat Commun 7 10559
ISSN 2041-1723 (Electronic) 2041-1723 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/26892831
[172] Liu N, Teng J and Li Y 2018 Nat Commun 9 1282
ISSN 2041-1723 (Electronic) 2041-1723 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/29599425
[173] Lee J S, Richardella A, Rench D W, Fraleigh R D,
Flanagan T C, Borchers J A, Tao J and Samarth N
2014 Physical Review B 89 ISSN 1098-0121 1550-235X
[174] Zhang J, Chang C Z, Tang P, Zhang Z, Feng X, Li K,
Wang L L, Chen X, Liu C, Duan W, He K, Xue
Q K, Ma X and Wang Y 2013 Science 339 1582 -- 6
ISSN 1095-9203 (Electronic) 0036-8075 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/23539598
[175] Zhang Z, Feng X, Guo M, Li K, Zhang J, Ou Y, Feng Y,
Wang L, Chen X, He K, Ma X, Xue Q and Wang Y
2014 Nat Commun 5 4915 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/25222696
[176] Keser A C, Raimondi R and Culcer D 2019 arXiv
1902:09605
[177] Fu L and Kane C L 2008 Phys Rev Lett 100 096407 ISSN
0031-9007 (Print) 0031-9007 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/18352737
[178] Fu L and Kane C L 2009 Phys Rev Lett 102 216403 ISSN
0031-9007 (Print) 0031-9007 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/19519119
[179] Akhmerov A R, Nilsson J and Beenakker C W 2009 Phys
Rev Lett 102 216404 ISSN 0031-9007 (Print) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/19519120
[180] Wei P, Katmis F, Assaf B A, Steinberg H, Jarillo-
Herrero P, Heiman D and Moodera J S 2013 Phys
Rev Lett 110 186807 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/23683236
[181] Yang Q I, Dolev M, Zhang L, Zhao J, Fried A D, Schemm
E, Liu M, Palevski A, Marshall A F, Risbud S H and
Kapitulnik A 2013 Physical Review B 88 ISSN 1098-
CONTENTS
51
0121 1550-235X
[182] Kandala A, Richardella A, Rench D W, Zhang D M,
Flanagan T C and Samarth N 2013 Applied Physics
Letters 103 202409 (Preprint https://doi.org/10.
1063/1.4831987) URL https://doi.org/10.1063/1.
4831987
[183] Lang M, Montazeri M, Onbasli M C, Kou X, Fan Y,
Upadhyaya P, Yao K, Liu F, Jiang Y, Jiang W, Wong
K L, Yu G, Tang J, Nie T, He L, Schwartz R N, Wang
Y, Ross C A and Wang K L 2014 Nano Lett 14 3459 -- 65
ISSN 1530-6992 (Electronic) 1530-6984 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/24844837
[184] Yang W, Yang S, Zhang Q, Xu Y, Shen S, Liao J, Teng
J, Nan C, Gu L, Sun Y, Wu K and Li Y 2014 Applied
Physics Letters 105 ISSN 0003-6951 1077-3118
[185] Alegria L D, Ji H, Yao N, Clarke J J, Cava R J and Petta
J R 2014 Applied Physics Letters 105 ISSN 0003-6951
1077-3118
[186] Tang C, Chang C Z, Zhao G, Liu Y, Jiang Z, Liu C X,
McCartney M R, Smith D J, Chen T, Moodera J S
and Shi J 2017 Sci Adv 3 e1700307 ISSN 2375-2548
(Electronic) 2375-2548 (Linking) URL https://www.
ncbi.nlm.nih.gov/pubmed/28691097
[187] Buchenau S, Sergelius P, Wiegand C, B ler S, Zierold R,
Shin H S, Rbhausen M, Gooth J and Nielsch K 2017
2D Materials 4 ISSN 2053-1583
[188] Huang S Y, Chong C W, Tung Y, Chen T C, Wu K C, Lee
M K, Huang J C, Li Z and Qiu H 2017 Sci Rep 7 2422
ISSN 2045-2322 (Electronic) 2045-2322 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/28546637
[189] Katmis F, Lauter V, Nogueira F S, Assaf B A, Jamer
M E, Wei P, Satpati B, Freeland J W, Eremin I,
Heiman D, Jarillo-Herrero P and Moodera J S 2016
Nature 533 513 -- 6 ISSN 1476-4687 (Electronic) 0028-
0836 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/27225124
[190] Li M, Song Q, Zhao W, Garlow J A, Liu T H, Wu L, Zhu
Y, Moodera J S, Chan M H W, Chen G and Chang C Z
2017 Physical Review B 96 ISSN 2469-9950 2469-9969
[191] Lee J S, Richardella A, Fraleigh R D, Liu C x, Zhao W
and Samarth N 2018 npj Quantum Materials 3 ISSN
2397-4648
[192] Mogi M, Nakajima T, Ukleev V, Tsukazaki A, Yoshimi R,
Kawamura M, Takahashi K S, Hanashima T, Kakurai
K, Arima T h, Kawasaki M and Tokura Y 2019 Physical
Review Letters 123 ISSN 0031-9007 1079-7114
[193] Luo W D and Qi X L 2013 Physical Review B 87 ISSN
1098-0121 URL <GotoISI>://WOS:000315146500016
[194] Eremeev S V, Men'shov V N, Tugushev V V, Echenique
P M and Chulkov E V 2013 Physical Review B 88 ISSN
1098-0121 URL <GotoISI>://WOS:000326389400005
[195] Hirahara T, Eremeev S V, Shirasawa T, Okuyama Y,
Kubo T, Nakanishi R, Akiyama R, Takayama A, Hajiri
T, Ideta S I, Matsunami M, Sumida K, Miyamoto
K, Takagi Y, Tanaka K, Okuda T, Yokoyama T,
Kimura S I, Hasegawa S and Chulkov E V 2017 Nano
Lett 17 3493 -- 3500 ISSN 1530-6992 (Electronic) 1530-
6984 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/28545300
[196] Otrokov M M, Rusinov I P, Blanco-Rey M, Hoffmann M,
Vyazovskaya A Y, Eremeev S V, Ernst A, Echenique
P M, Arnau A and Chulkov E V 2019 Phys Rev
Lett 122 107202 ISSN 1079-7114 (Electronic) 0031-
9007 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/30932645
[197] Li J, Li Y, Du S, Wang Z, Gu B L, Zhang S C, He
K, Duan W and Xu Y 2019 Sci Adv 5 eaaw5685
ISSN 2375-2548 (Electronic) 2375-2548 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/31214654
[198] Deng Y, Yu Y, Zhu Shi M, Wang J, Chen X H and Zhang Y
2019 arXiv e-prints arXiv:1904.11468 (Preprint 1904.
11468)
[199] Nikolic B K, Dolui K, Petrovic M D, Plechac P, Markussen
T and Stokbro K 2018 First-Principles Quantum
Transport Modeling of Spin-Transfer and Spin-Orbit
Torques in Magnetic Multilayers (Cham: Springer)
[200] Manchon A, Miron I, Jungwirth T, Sinova J, Zelezny
J, Thiaville A, Garello K and Gambardella P arXiv
1801.09636
[201] Li C H, van 't Erve O M, Robinson J T, Liu Y, Li
L and Jonker B T 2014 Nat Nanotechnol 9 218 -- 24
ISSN 1748-3395 (Electronic) 1748-3387 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/24561354
[202] Mellnik A, Lee J, Richardella A, Grab J, Mintun P, Fischer
M, Vaezi A, Manchon A, Kim E, Samarth N and Ralph
D 2014 Nature 511 449
[203] Wang Y, Deorani P, Banerjee K, Koirala N, Brahlek M,
Oh S and Yang H 2015 Phys Rev Lett 114 257202
ISSN 1079-7114 (Electronic) 0031-9007 (Linking) URL
https://www.ncbi.nlm.nih.gov/pubmed/26197141
[204] Jamali M, Lee J S, Jeong J S, Mahfouzi F, Lv Y,
Zhao Z, Nikolic B K, Mkhoyan K A, Samarth N and
Wang J P 2015 Nano Lett 15 7126 -- 32 ISSN 1530-
6992 (Electronic) 1530-6984 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/26367103
[205] Kondou K, Yoshimi R, Tsukazaki A, Fukuma Y, Matsuno
J, Takahashi K S, Kawasaki M, Tokura Y and Otani
Y 2016 Nature Physics 12 1027 -- 1031 ISSN 1745-2473
1745-2481
[206] Fanchiang Y T, Chen K H M, Tseng C C, Chen C C, Cheng
C K, Yang S R, Wu C N, Lee S F, Hong M and Kwo J
2018 Nat Commun 9 223 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/29335558
[207] Fan Y, Upadhyaya P, Kou X, Lang M, Takei S, Wang Z,
Tang J, He L, Chang L T, Montazeri M, Yu G, Jiang W,
Nie T, Schwartz R N, Tserkovnyak Y and Wang K L
2014 Nat Mater 13 699 -- 704 ISSN 1476-1122 (Print)
1476-1122 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/24776536
[208] Yasuda K, Tsukazaki A, Yoshimi R, Kondou K, Takahashi
K, Otani Y, Kawasaki M and Tokura Y 2017 Phys. Rev.
Lett. 119 137204
[209] Dc M, Grassi R, Chen J Y, Jamali M, Reifsnyder Hickey
D, Zhang D, Zhao Z, Li H, Quarterman P, Lv Y, Li M,
Manchon A, Mkhoyan K A, Low T and Wang J P 2018
Nat Mater 17 800 -- 807 ISSN 1476-1122 (Print) 1476-
1122 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/30061733
[210] Han J, Richardella A, Siddiqui S A, Finley J, Samarth N
and Liu L 2017 Phys Rev Lett 119 077702 ISSN 1079-
7114 (Electronic) 0031-9007 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/28949690
[211] Wang Y, Zhu D, Wu Y, Yang Y, Yu J, Ramaswamy R,
Mishra R, Shi S, Elyasi M, Teo K L, Wu Y and Yang H
2017 Nat Commun 8 1364 ISSN 2041-1723 (Electronic)
2041-1723 (Linking) URL https://www.ncbi.nlm.nih.
gov/pubmed/29118331
[212] Khang N H D, Ueda Y and Hai P N 2018 Nat
Mater 17 808 -- 813 ISSN 1476-1122 (Print) 1476-
1122 (Linking) URL https://www.ncbi.nlm.nih.gov/
pubmed/30061731
[213] Liu L, Pai C F, Li Y, Tseng H W, Ralph D C and
Buhrman R A 2012 Science 336 555 -- 8 ISSN 1095-
9203 (Electronic) 0036-8075 (Linking) URL https://
www.ncbi.nlm.nih.gov/pubmed/22556245
[214] Mounet N, Gibertini M, Schwaller P, Campi D, Merkys A,
Marrazzo A, Sohier T, Castelli I E, Cepellotti A, Pizzi G
and Marzari N 2018 NATURE NANOTECHNOLOGY
13 246+ ISSN 1748-3387
CONTENTS
52
[215] Aronov A and Lyanda-Geller Y 1989 JETP Lett. 50 431
[216] Aronov A, Lyanda-Geller Y and Pikus G 1991 JETP 73
537
[217] Ramaswamy R, Lee J M, Cai K M and Yang H
2018 Applied Physics Reviews 5 ISSN 1931-9401 URL
<GotoISI>://WOS:000446117000007
[218] Ghosh S and Manchon A 2018 Phys. Rev. B 97 134402
[219] MacNeill D, Stiehl G, Guimaraes M, Buhrman R, Park J
[252] Fang C, Gilbert M J and Bernevig B A 2014 Phys. Rev.
Lett. 112 046801
[253] Zhong P, Ren Y, Han Y, Zhang L and Qiao Z 2017 Phys.
Rev. B 96 241103
[254] Serlin M, Tschirhart C L, Polshyn H, Zhang Y, Zhu J,
Watanabe K, Taniguchi T, Balents L and Young A F
2019 arXiv:1907.00261
[255] Sabzalipour A, Abouie J and Abedinpour S H 2015 J.
and Ralph D 2017 Nature Phys. 13 300
Phys.: Condens. Matter 27 115301
[220] Li P, Wu W, Wen Y, Zhang C, Zhang J, Zhang S, Yu Z,
Yang S A, Manchon A and xiang Zhang X 2018 Nature
Commun. 9 3990
[256] Zarezad A N and Abouie J 2018 Phys. Rev. B 98 155413
[257] Ado I A, Dmitriev I A, Ostrovsky P M and Titov M 2015
Europhys. Lett. 111 37004
[221] Chang P H, Markussen T, Smidstrup S, Stokbro K and
[258] Ado I A, Dmitriev I A, Ostrovsky P M and Titov M 2017
Nikolic B K 2015 Phys. Rev. B 92 201406
Phys. Rev. B 96 235148
[222] Akzyanov R S and Rakhmanov A L 2018 Phys. Rev. B 97
075421
[223] Marmolejo-Tejada J M, Dolui K, Lazic P, Chang P H,
Smidstrup S, Stradi D, Stokbro K and Nikolic B K 2017
Nano Letters 17 5626
[224] Inoue J i, Kato T, Ishikawa Y, Itoh H, Bauer G E W and
Molenkamp L W 2006 Phys. Rev. Lett. 97(4) 046604
[225] Inoue J, Bauer G E W and Molenkamp L W 2004 Phys.
Rev. B 70 041303
[226] Ado I A, Tretiakov O A and Titov M 2017 Phys. Rev. B
95 094401
[227] Xiao C and Niu Q 2017 Phys. Rev. B 96 045428
[228] Fischer M H, Vaezi A, Manchon A and Kim E A 2016
Phys. Rev. B 93 125303
[229] Ndiaye P B, Akosa C A, Fischer M H, Vaezi A, Kim E A
and Manchon A 2017 Phys. Rev. B 96 014408
[230] Jin K H and Jhi S H 2013 Phys. Rev. B 87 075442
[231] Rodriguez-Vega M, Schwiete G, Sinova J and Rossi E 2017
[259] Tse W K 2016 Phys. Rev. B 94 125430
[260] Lee W R and Tse W K 2017 Phys. Rev. B 95 201411
[261] Araki Y and Nomura K 2017 Phys. Rev. B 96 165303
[262] Andrikopoulos D and Soree B 2017 Sci. Rep. 7 17871
[263] Okuma N, Masir M R and MacDonald A H 2017 Phys.
Rev. B 95 165418
[264] Imai Y and Kohno H 2018 J. Phys. Soc. Jpn. 87 073709
[265] Yasuda K, Tsukazaki A, Yoshimi R, Takahashi K,
Kawasaki M and Tokura Y 2016 Phys. Rev. Lett. 117
127202
[266] Konig E J, Ostrovsky P M, Protopopov I V, Gornyi I V,
Burmistrov I S and Mirlin A D 2014 Phys. Rev. B 90
165435
[267] Zhang S B, Lu H Z and Shen S Q 2015 Sci. Rep. 5 13277
[268] Li X, Zhang F and Niu Q 2013 Phys. Rev. Lett. 110 066803
[269] Cazalilla M A, Ochoa H and Guinea F 2014 Phys. Rev.
Lett. 113 077201
[270] Li X, Zhang F and MacDonald A 2016 Phys. Rev. Lett.
Phys. Rev. B 96 235419
116 026803
[232] Zhang Q, Chan K S and Li J 2018 Sci. Rep. 8 4343
[233] Song K, Soriano D, Cummings A W, Robles R, Ordejon
P and Roche S 2018 Nano Lett. 18 2033
[271] Spataru C D and Lonard F 2014 Phys. Rev. B 90 085115
[272] Kotulla M and Zuelicke U 2017 New J. Phys. 19 073025
[273] Wang J, Meir Y and Gefen Y 2017 Phys. Rev. Lett. 118
[234] Huang C L, Chong Y D and Cazalilla M A 2017 Phys.
046801
Rev. Lett. 119 136804
[274] Tanaka Y, Furusaki A and Matveev K A 2011 Phys. Rev.
[235] He K, Wang Y and Xue Q K 2018 Annu. Rev. Condens.
Lett. 106 236402
Matter Phys. 9 329
[236] Yu R, Zhang W, Zhang H J, Zhang S C, Dai X and
Fang Z 2010 Science 329 61 -- 64 (Preprint http://www.
sciencemag.org/content/329/5987/61.full.pdf)
[237] Rosenberg G and Franz M 2012 Phys. Rev. B 85 195119
[238] Wang J and Culcer D 2013 Phys. Rev. B 88(12) 125140
[239] Principi A, Vignale G and Rossi E 2015 Phys. Rev. B 92
041107
[275] Maciejko J 2009 Phys. Rev. Lett. 102 256803
[276] Altshuler B L, Aleiner I L and Yudson V I 2013 Phys. Rev.
Lett. 111 086401
[277] Black-Schaffer A M and Balatsky A V 2012 Phys. Rev. B
85 121103
[278] Zhang Y Y, Shen M, An X T, Sun Q F, Xie X C, Chang
K and Li S S 2014 Phys. Rev. B 90 054205
[279] Novelli P, Taddei F, Geim A K and Polini M 2019 Phys.
[240] Kernreiter T, Governale M, Zuelicke U and Hankiewicz E
Rev. Lett. 122 016601
2016 Phys. Rev. X 6 021010
[280] Vayrynen J I, Goldstein M and Glazman L I 2013 Phys.
[241] Kim J, Wang H and Wu R 2018 Phys. Rev. B 97 125118
[242] Qi S, Qiao Z, Deng X, Cubuk E D, Chen H, Zhu W,
Kaxiras E, Zhang S, Xu X and Zhang Z 2016 Phys.
Rev. Lett. 117 056804
[243] Kim J, Jhi S H, MacDonald A H and Wu R 2017 Phys.
Rev. Lett. 110 216402
[281] Vayrynen J I, Goldstein M, Gefe Y and Glazman L I 2014
Phys. Rev. B 90 115309
[282] Liu C, Edmonds M T and Fuhrer M S 2019
arXiv:1906.01214
Rev. B 96 140410
[283] Kosmider K, Gonzalez J W and Fernandez-Rossier J 2013
[244] Men'shov V N, Tugushev V V, Eremeev S V, Echenique
Phys. Rev. B 88 245436
P M and Chulkov E V 2013 Phys. Rev. B 88 224401
[284] Kosmider K and Fernandez-Rossier J 2013 Phys. Rev. B
[245] Eremeev S V, Men'shov V N, Tugushev V V, Echenique
87 075451
P M and Chulkov E V 2013 Phys. Rev. B 88 144430
[285] Gibertini M, Pellegrino F M D, Marzari N and Polini M
[246] Nagaosa N, Sinova J, Onoda S, MacDonald A H and Ong
2014 Phys. Rev. B 90 245411
N P 2010 Rev. Mod. Phys. 82(2) 1539
[286] Xiao Y M, Xu W, Duppen B V and Peeters F M 2016
[247] Culcer D and Das Sarma S 2011 Phys. Rev. B 83(24)
Phys. Rev. B 94 155432
245441
[287] Mak K F, McGill K L, Park J and McEuen P L 2014
[248] Lu H Z, Zhao A and Shen S Q 2013 Phys. Rev. Lett. 111
Science 344 1489
146802
[249] Dai X, Du Z Z and Lu H Z 2017 Phys. Rev. Lett. 119
[288] Lee J, Mak K F and Shan J 2016 Nature Nano. 11 421
[289] Beconcini M, Taddei F and Polini M 2016 Phys. Rev. B
166601
94 121408
[250] Tse W K and Das Sarma S 2006 Phys. Rev. B 74 245309
[251] Bi X, He P, Hankiewicz E M, Winkler R, Vignale G and
[290] Feng W, Yao Y, Zhu W, Zhou J, Yao W and Xiao D 2012
Phys. Rev. B 86 165108
Culcer D 2013 Phys. Rev. B 88 035316
[291] Shan W Y, Lu H Z and Xiao D 2013 Phys. Rev. B 88
CONTENTS
125301
[292] Zhang L, Gong K, Chen J, Liu L, Zhu Y, Xiao D and Guo
H 2014 Phys. Rev. B 90 195428
[293] Tahir M, Vasilopoulos P and Peeters F M 2016 Phys. Rev.
B 93 035406
53
[326] Gao Y and Xiao D 2018 Phys. Rev. B 98 060402
[327] Sodemann I and Fu L 2015 Phys. Rev. Lett. 115 216806
[328] Facio J I, Efremov D, Koepernik K, You J S, Sodemann I
and van den Brink J 2018 Phys. Rev. Lett. 121 246403
[329] Konig E J, Dzero M, Levchenko A and Pesin D A 2019
[294] Tse W K, Saxena A, Smith D and Sinitsyn N 2014 Phys.
Phys. Rev. B 99 155404
Rev. Lett. 113 046602
[330] You J S, Fang S, Xu S Y, Kaxiras E and Low T 2018 Phys.
[295] Sharma G, Economou S E and Barnes E 2017 Phys. Rev.
Rev. B 98 121109
B 96 125201
[296] Zhou T, Zhang J, Jiang H, Zutic I and Yang Z 2018 npj
Quant Mater 3 39
[297] Mak K F and Shan J 2016 Nature Photonics 10 216
[298] Mak K F, Xiao D and Shan J 2018 Nature Photonics 12
[331] Zhang Y, Sun Y and Yan B 2018 Phys. Rev. B 97 041101
[332] Matsyshyn O and Sodemann I 2019 arXiv:1907.02532
[333] Isobe H, Xu S Y and Fu L 2018 arXiv 1812:08162
[334] Du Z Z, Wang C M, Lu H Z and Xie X C 2018 arXiv
1812:08377
451
[335] Yang Z K, Wang J R and Liu G Z 2018 Phys. Rev. B 98
[299] Tahir M, Krstajic P M and Vasilopoulos P 2017 Europhys.
195123
Lett. 118 17001
[300] Kovalev V M, Tse W K, Fistul M V and Savenko I G 2018
New J. Phys 20 083007
[301] Lensky Y D, Song J C, Samutpraphoot P and Levitov L S
2015 Phys. Rev. Lett. 114 256601
[302] Kormanyos A, Zolyomi V, Fal'ko V I and Burkard G 2018
[336] Zhang S S L and Vignale G 2019 arXiv 1808:06339
[337] He P, Zhang S S L, Zhu D, Liu Y, Wang Y, Yu J, Vignale
G and Yang H 2018 Nature Phys. 14 495
[338] Hipolito F and Pereira V M 2017 2D Materials 4 021027
[339] Sipe J E and Shkrebtii A I 2000 Phys. Rev. B 61 5337
[340] Kim K W, Morimoto T and Nagaosa N 2017 Phys. Rev.
Phys. Rev. B 98 035408
B 95 035134
[303] Abergel D, Edge J and Balatsky A 2014 New J. Phys. 16
[341] Hamamoto K, Ezawa M, Kim K W, Morimoto T and
065012
Nagaosa N 2017 Phys. Rev. B 95 224430
[304] Sekine A and MacDonald A H 2018 Phys. Rev. B 97
[342] Zhang Y, van den Brink J, Felser C and Yan B 2018 2D
201301
Materials 5 044001
[305] Hosur P 2012 Phys. Rev. B 86 195102
[306] Wilson J H, Pixley J H, Huse D A, Refael G and Das
[343] Rostami H and Polini M 2018 Phys. Rev. B 97 195151
[344] Salomaa M M and Volovik G E 1987 Rev. Mod. Phys. 59
Sarma S 2018 Phys. Rev. B 97 235108
533
[307] Inoue H, Gyenis A, Wang Z, Li J, Oh S W, Jiang S,
Bernevig B A and Yazdani A 2016 Science 351 1184
[308] Gorbar E V, Miransky V A, Shovkovy I A and Sukhachov
P O 2016 Phys. Rev. B 93 235127
[309] Resta G, Pi S T, Wan X and Savrasov S Y 2018 Phys.
Rev. B 97 085142
[310] Zhao X M, Kong X, Guo C X, Wu Y J and Kou S P 2018
Europhys. Lett. 120 47004
[311] Potter A C, Kimchi I and Vishwanath A 2014 Nature
Comm. 5 5161
[312] Moll P J, Nair N L, Helm T, Potter A C, Kimchi I,
Vishwanath A and Analytis J G 2016 Nature 535 266
[313] Wang C M, Sun H P, Lu H Z and Xie X C 2017 Phys.
[345] Salomaa M M and Volovik G E 1988 Phys. Rev. B 37 9298
[346] Wen X G and Zee A 1991 Phys. Rev. B 44 274
[347] Tanaka Y and Kashiwaya S 1995 Phys. Rev. Lett. 74 345
[348] Tanaka Y and Kashiwaya S 1996 Phys. Rev. B 53 9371
[349] Kashiwaya S and Tanaka Y 2000 Rep. Prog. Phys. 63 1641
[350] Read N and Green D 2000 Phys. Rev. B 61 10267
[351] Ivanov D A 2001 Phys. Rev. Lett. 86 268
[352] Kitaev A Y 2001 Phys. Usp. 44 131
[353] Kitaev A 2003 Ann. Phys. 303 2
[354] Nayak C, Simon S H, Stern A, Freedman M and Das Sarma
S 2008 Rev. Mod. Phys. 80 1083
[355] Schnyder A P, Ryu S, Furusaki A and Ludwig A W W
2008 Phys. Rev. B 78 195125
Rev. Lett. 119 136806
[356] Morimoto T, Furusaki A and Mudry C 2015 Phys. Rev. B
[314] Baireuther P, Hutasoit J A, Tworzydlo J and Beenakker
92 125104
C W J 2016 New Jour. Phys. 18 045009
[357] Chiu C K, Teo J C Y, Schnyder A P and Ryu S 2016 Rev.
[315] k Shi L and Song J C W 2017 Phys. Rev. B 96 081410
[316] Pellegrino F M D, Katsnelson M I and Polini M 2015 Phys.
Mod. Phys. 88 035005
[358] Tanaka Y, Sato M and Nagaosa N 2012 J. Phys. Soc. Jpn.
Rev. B 92 201407
81 011013
[317] Hofmann J and Das Sarma S 2016 Phys. Rev. B 93 241402
[318] Song J C W and Rudner M S 2017 Phys. Rev. B 96 205443
[319] Andolina G M, Pellegrino F M D, Koppens F H L and
Polini M 2018 Phys. Rev. B 97 125431
[359] Alicea J 2012 Rep. Prog. Phys. 75 076501
[360] Beenakker C 2013 Annu. Rev. Con. Mat. Phys. 4 113
[361] Elliott S R and Franz M 2015 Rev. Mod. Phys. 87 137
[362] Sarma S D, Freedman M and Nayak C 2015 NPJ Quantum
[320] Misawa T, Yokoyama T and Murakami S 2011 Phys. Rev.
Inf. 1 15001
B 84 165407
[321] Tokura Y and Nagaosa N 2018 Nature Communications 9
3740
[322] Ma Q, Xu S Y, Shen H, MacNeill D, Fatemi V, Chang T R,
Valdivia A M M, Wu S, Du Z, Hsu C H, Fang S, Gibson
Q D, Watanabe K, Taniguchi T, Cava R J, Kaxiras E,
Lu H Z, Lin H, Fu L, Gedik N and Jarillo-Herrero P
2019 Nature 565 337
[323] Kang K, Li T, Sohn E, Shan J and Mak K F 2019 Nature
Mater. 18 324
[324] Xu S Y, Ma Q, Shen H, Fatemi V, Wu S, Chang T R,
Chang G, Valdivia A M M, Chan C K, Gibson Q D,
Zhou J, Liu Z, Watanabe K, Taniguchi T, Lin H, Cava
R J, Fu L, Gedik N and Jarillo-Herrero P 2018 Nature
Physics 14 900
[325] Gao Y, Yang S A and Niu Q 2014 Phys. Rev. Lett. 112
166601
[363] Sato M and Ando Y 2017 Rep. Prog. Phys. 80 076501
[364] Aguado R 2017 La Rivista del Nuovo Cimento 40 523
[365] Haim A and Oreg Y 2018 Time-reversal-invariant
topological superconductivity (Preprint arXiv:1809.
06863)
[366] Leggett A J 1975 Rev. Mod. Phys. 47 331
[367] Vollhardt D and Wolfle P 1990 The Superfluid Phases of
Helium 3 (New York: Taylor and Francis)
[368] Kohmoto M 1985 Ann. Phys. 160 343
[369] Liu C X, Zhang S C and Qi X L 2016 Annu. Rev. Condens.
Matter Phys. 7 301
[370] Mackenzie A P and Maeno Y 2003 Rev. Mod. Phys. 75
657
[371] Rice T M and Sigrist M 1995 J. Phys.: Condens. Matter
7 L643
[372] Luke G M et al. 1998 Nature 394 558
[373] Kashiwaya S, Kashiwaya H, Kambara H, Furuta T,
CONTENTS
54
Yaguchi H, Tanaka Y and Maeno Y 2011 Phys. Rev.
Lett. 107 077003
[374] Scaffidi T, Romers J C and Simon S H 2014 Phys. Rev. B
89 220510
[375] Yada K, Golubov A A, Tanaka Y and Kashiwaya S 2014
J. Phys. Soc. Jpn. 83 074706
[376] Zhang L F, Becerra V F, Covaci L and Milosevi´c M V 2016
Phys. Rev. B 94 024520
[407] Sochnikov I, Bestwick A J, Williams J R, Lippman T M,
Fisher I R, Goldhaber-Gordon D, Kirtley J R and Moler
K A 2013 Nano Lett. 13 3086
[408] Hart S, Ren H, Wagner T, Leubner P, Muhlbauer M,
Brune C, Buhmann H, Molenkamp L W and Yacoby
A 2014 Nat. Phys. 10 638
[409] Snelder M et al. 2014 Supercond. Sci. Technol. 27 104001
[410] Molenaar C G, Leusink D P, Wang X L and Brinkman A
[377] Wang H, Luo J, Lou W, Ortmann J E, Mao Z Q, Liu Y
2014 Supercond. Sci. Technol. 27 104003
and Wei J 2017 New J. Phys. 19 053001
[378] Wang H, Ma L and Wang J 2018 Sci. Bull. 63 1141
[379] Ueno Y, Yamakage A, Tanaka Y and Sato M 2013 Phys.
Rev. Lett. 111 087002
[380] Hor Y S, Williams A J, Checkelsky J G, Roushan P, Seo
J, Xu Q, Zandbergen H W, Yazdani A, Ong N P and
Cava R J 2010 Phys. Rev. Lett. 104 057001
[381] Fu L and Berg E 2010 Phys. Rev. Lett. 105 097001
[382] Sasaki S, Kriener M, Segawa K, Yada K, Tanaka Y, Sato
M and Ando Y 2011 Phys. Rev. Lett. 107 217001
[383] Sasaki S, Ren Z, Taskin A A, Segawa K, Fu L and Ando
Y 2012 Phys. Rev. Lett. 109 217004
[384] Novak M, Sasaki S, Kriener M, Segawa K and Ando Y
2013 Phys. Rev. B 88 140502
[385] Sato M and Fujimoto S 2009 Phys. Rev. B 79 094504
[386] Tanaka Y, Yokoyama T, Balatsky A V and Nagaosa N
2009 Phys. Rev. B 79 060505
[387] Schnyder A P and Brydon P M R 2015 J. Phys.: Condens.
Matter 27 243201
[388] Yada K, Sato M, Tanaka Y and Yokoyama T 2011 Phys.
Rev. B 83 064505
[389] Loder F, Kampf A P and Kopp T 2015 Sci. Rep. 5 15302
[390] Mazziotti M V, Scopigno N, Grilli M and Caprara S 2018
Condens. Matt. 3 37
[391] Lei C, Chen H and MacDonald A H 2018 Phys. Rev. Lett.
121 227701
[392] Andreev A F 1964 Sov. Phys. JETP. 19 1228
[393] Blonder G E, Tinkham M and Klapwijk T M 1982 Phys.
Rev. B 25 4515
[394] Fu L and Kane C L 2008 Phys. Rev. Lett. 100 096407
[395] Zhang D, Wang J, DaSilva A M, Lee J S, Gutierrez H R,
Chan M H W, Jain J and Samarth N 2011 Phys. Rev.
B 84 165120
[396] Koren G, Kirzhner T, Lahoud E, Chashka K B and Kanigel
A 2011 Phys. Rev. B 84 224521
[397] Sacepe B, Oostinga J B, Li J, Ubaldini A, Couto N J G,
Giannini E and Morpurgo A F 2011 Nat. Commun. 2
575
[398] Veldhorst M, Snelder M, Hoek M, Gang T, Guduru V K,
Wang X L, Zeitler U, van der Wiel W G, Golubov A A,
Hilgenkamp H and Brinkman A 2012 Nat. Mater. 11
417
[399] Qu F, Yang F, Shen J, Ding Y, Chen J, Ji Z, Liu G, Fan
J, Jing X, Yang C and Lu L 2012 Sci. Rep. 2 339
[400] Wang M X et al. 2012 Science 336 52
[401] Williams J R, Bestwick A J, Gallagher P, Hong S S, Cui
Y, Bleich A S, Analytis J G, Fisher I R and Goldhaber-
Gordon D 2012 Phys. Rev. Lett. 109 056803
[402] Yang F, Qu F, Shen J, Ding Y, Chen J, Ji Z, Liu G, Fan J,
Yang C, Fu L and Lu L 2012 Phys. Rev. B 86 134504
[403] Maier L, Oostinga J B, Knott D, Brune C, Virtanen P,
Tkachov G, Hankiewicz E M, Gould C, Buhmann H
and Molenkamp L W 2012 Phys. Rev. Lett. 109 186806
[404] Cho S, Dellabetta B, Yang A, Schneeloch J, Xu Z, Valla T,
Gu G, Gilbert M J and Mason N 2013 Nat. Commun.
4 1689
[405] Oostinga J B, Maier L, Schuffelgen P, Knott D, Ames C,
Brune C, Tkachov G, Buhmann H and Molenkamp L W
2013 Phys. Rev. X 3 021007
[406] Koren G, Kirzhner T, Kalcheim Y and Millo O 2013 EPL
[411] Galletti L 2014 Phys. Rev. B 89 134512
[412] Kurter C, Finck A D K, Ghaemi P, Hor Y S and
Van Harlingen D J 2014 Phys. Rev. B 90 014501
[413] Finck A D K, Kurter C, Hor Y S and Van Harlingen D J
2014 Phys. Rev. X 4 041022
[414] Sochnikov I et al. 2015 Phys. Rev. Lett. 114 066801
[415] Xu J P et al. 2015 Phys. Rev. Lett. 114 017001
[416] Stehno M P, Orlyanchik V, Nugroho C D, Ghaemi P,
Brahlek M, Koirala N, Oh S and Van Harlingen D J
2016 Phys. Rev. B 93 035307
[417] Wiedenmann J et al. 2016 Nat. Commun. 7 10303
[418] Tikhonov E S, Shovkun D V, Snelder M, Stehno M P,
Huang Y, Golden M S, Golubov A A, Brinkman A and
Khrapai V S 2016 Phys. Rev. Lett. 117 147001
[419] Pang Y et al. 2016 Chin. Phys. B 25 117402
[420] Dayton I M, Sedlmayr N, Ramirez V, Chasapis T C, Loloee
R, Kanatzidis M G, Levchenko A and Tessmer S H 2016
Phys. Rev. B 93 220506
[421] Hart S, Ren H, Kosowsky M, Ben-Shach G, Leubner P,
Brune C, Buhmann H, Molenkamp L W, Halperin B I
and Yacoby A 2016 Nat. Phys. 13 87
[422] Bocquillon E, Deacon R S, Wiedenmann J, Leubner P,
Klapwijk T M, Brune C, Ishibashi K, Buhmann H and
Molenkamp L W 2016 Nat. Nanotechnol. 12 137
[423] Deacon R S et al. 2017 Phys. Rev. X 7 021011
[424] He Q L et al. 2017 Science 357 294
[425] Charpentier S et al. 2017 Nat. Commun. 8 2019
[426] Jauregui L A, Kayyalha M, Kazakov A, Miotkowski I,
Rokhinson L P and Chen Y P 2018 Appl. Phys. Lett.
112 093105
[427] Ghatak S, Breunig O, Yang F, Wang Z, Taskin A A and
Ando Y 2018 Nano Lett. 18 5124
[428] Klett R et al. 2018 Nano Letters 18 1264
[429] Snyder R A, Trimble C J, Rong C C, Folkes P A, Taylor
P J and Williams J R 2018 Phys. Rev. Lett. 121 097701
[430] Lyu Z et al. 2018 Phys. Rev. B 98 155403
[431] Shen J et al. 2018 Spectroscopic evidence of chiral ma-
jorana modes in a quantum anomalous hall
insula-
tor/superconductor heterostructure (Preprint arXiv:
1809.04752)
[432] Kurter C et al. 2019 Nano Lett. 19 38
[433] Kayyalha M, Kargarian M, Kazakov A, Miotkowski I,
Galitski V M, Yakovenko V M, Rokhinson L P and Chen
Y P 2019 Phys. Rev. Lett. 122 047003
[434] Kayyalha M et al. 2019 Non-majorana origin of the half-
quantized conductance plateau in quantum anomalous
hall
insulator and superconductor hybrid structures
(Preprint arXiv:1904.06463)
[435] Taskin A A, Ren Z, Sasaki S, Segawa K and Ando Y 2011
Phys. Rev. Lett. 107 016801
[436] Chang C Z et al. 2013 Science 340 167
[437] M´enard G C, Guissart S, Brun C, Leriche R T, Trif M,
Debontridder F, Demaille D, Roditchev D, Simon P and
Cren T 2017 Nat. Commun. 8 2040
[438] Fu L and Kane C L 2009 Phys. Rev. Lett. 102 216403
[439] Akhmerov A R, Nilsson J and Beenakker C W J 2009
Phys. Rev. Lett. 102 216404
[440] Fu L and Kane C L 2009 Phys. Rev. B 79 161408
[441] Law K T, Lee P A and Ng T K 2009 Phys. Rev. Lett. 103
237001
103 67010
[442] Tanaka Y, Yokoyama T and Nagaosa N 2009 Phys. Rev.
CONTENTS
55
Lett. 103 107002
[443] Linder J, Tanaka Y, Yokoyama T, Sudbø A and Nagaosa
N 2010 Phys. Rev. B 81 184525
[444] Qi X L, Hughes T L and Zhang S C 2010 Phys. Rev. B
82 184516
[445] Ioselevich P A and Feigel'man M V 2011 Phys. Rev. Lett.
106 077003
[446] Chung S B, Qi X L, Maciejko J and Zhang S C 2011 Phys.
Rev. B 83 100512
[447] Ii A, Yada K, Sato M and Tanaka Y 2011 Phys. Rev. B
83 224524
Shtrikman H 2012 Nat. Phys. 8 887
[480] Nadj-Perge S, Drozdov I K, Li J, Chen H, Jeon S, Seo J,
MacDonald A H, Bernevig B A and Yazdani A 2014
Science 346 602
[481] Deng M T, Vaitiekenas S, Hansen E B, Danon J, Leijnse
M, Flensberg K, Nygard J, Krogstrup P and Marcus
C M 2016 Science 354 1557
[482] Albrecht S M, Higginbotham A P, Madsen M, Kuemmeth
F, Jespersen T S, Nygard J, Krogstrup P and Marcus
C M 2016 Nature 531 206
[483] Jeon S, Xie Y, Li J, Wang Z, Bernevig B A and Yazdani
[448] Badiane D M, Houzet M and Meyer J S 2011 Phys. Rev.
A 2017 Science 358 772
Lett. 107 177002
[449] Golub A, Kuzmenko I and Avishai Y 2011 Phys. Rev. Lett.
107 176802
[484] Zhang H et al. 2018 Nature 556 74
[485] Ren H et al. 2019 Nature 569 93
[486] Rokhinson L P, Liu X and Furdyna J K 2012 Nature
[450] Ii A, Yamakage A, Yada K, Sato M and Tanaka Y 2012
Physics 8 795
Phys. Rev. B 86 174512
[451] Weithofer L and Recher P 2013 New J. Phys. 15 085008
[452] He J J, Wu J, Choy T P, Liu X J, Tanaka Y and Law K T
2014 Nat. Commun. 5 3232
[487] Li C, de Boer J C, de Ronde B, Ramankutty S V, van
Heumen E, Huang Y, de Visser A, Golubov A A, Golden
M S and Brinkman A 2018 Nature Materials 17 875
[488] Wang A Q, Li C Z, Li C, Liao Z M, Brinkman A and Yu
[453] Wang J, Zhou Q, Lian B and Zhang S C 2015 Phys. Rev.
D P 2018 Phys. Rev. Lett. 121 237701
B 92 064520
[454] Akzyanov R S, Rakhmanov A L, Rozhkov A V and Nori
F 2015 Phys. Rev. B 92 075432
[455] Shapiro D S, Shnirman A and Mirlin A D 2016 Phys. Rev.
B 93 155411
[456] Lian B, Wang J and Zhang S C 2016 Phys. Rev. B 93
161401
[489] Le Calvez K, Veyrat L, Gay F, Plaindoux P, Winkelmann
C B, Courtois H and Sac´ep´e B 2019 Commun. Phys. 2
4
[490] Laroche D et al. 2019 Nat. Commun. 10 245
[491] Jackiw R and Rebbi C 1976 Phys. Rev. D 13 3398
[492] Golubov A A, Kupriyanov M Y and Il'ichev E 2004 Rev.
Mod. Phys. 76 411
[457] Shapiro D S, Feldman D E, Mirlin A D and Shnirman A
2017 Phys. Rev. B 95 195425
[493] Anderson P W 1966 Rev. Mod. Phys. 38 298
[494] Jiang L, Pekker D, Alicea J, Refael G, Oreg Y and von
[458] Virtanen P, Bergeret F S, Strambini E, Giazotto F and
Oppen F 2011 Phys. Rev. Lett. 107 236401
Braggio A 2018 Phys. Rev. B 98 020501
[459] Ji W and Wen X G 2018 Phys. Rev. Lett. 120 107002
[460] Huang Y, Setiawan F and Sau J D 2018 Phys. Rev. B 97
[495] Pikulin D I and Nazarov Y V 2012 JETP Lett. 94 693
[496] Dom´ınguez F, Hassler F and Platero G 2012 Phys. Rev. B
86 140503
100501
[497] San-Jose P, Prada E and Aguado R 2012 Phys. Rev. Lett.
[461] Chen C Z, Xie Y M, Liu J, Lee P A and Law K T 2018
108 257001
Phys. Rev. B 97 104504
[462] Zhou Y F, Hou Z, Lv P, Xie X and Sun Q F 2018 Sci.
China Phys. Mech. Astron. 61 127811
[463] Lian B, Sun X Q, Vaezi A, Qi X L and Zhang S C 2018
Proc. Nat. Acad. Sci. USA 115 10938
[464] Li C A, Li J and Shen S Q 2019 Phys. Rev. B 99 100504
[465] Beenakker C W J, Baireuther P, Herasymenko Y,
Adagideli I, Wang L and Akhmerov A R 2019 Phys.
Rev. Lett. 122 146803
[498] Pikulin D I and Nazarov Y V 2012 Phys. Rev. B 86 140504
[499] Sau J D, Berg E and Halperin B I 2012 On the
possibility of the fractional ac josephson effect in
non-topological conventional superconductor-normal-
superconductor junctions (Preprint arXiv:1206.4596)
[500] Tkachov G and Hankiewicz E M 2013 Phys. Status Solidi
(b) 250 215
[501] Beenakker C W J, Pikulin D I, Hyart T, Schomerus H and
Dahlhaus J P 2013 Phys. Rev. Lett. 110 017003
[466] Kwon H J, Sengupta K and Yakovenko V M 2004 Eur.
[502] Houzet M, Meyer J S, Badiane D M and Glazman L I 2013
Phys. J. B 37 349
Phys. Rev. Lett. 111 046401
[467] Kwon H J, Yakovenko V M and Sengupta K 2004 Low
[503] Badiane D M, Glazman L I, Houzet M and Meyer J S 2013
Temp. Phys. 30 613
C. R. Phys. 14 840
[468] Sau J D, Lutchyn R M, Tewari S and Das Sarma S 2010
Phys. Rev. Lett. 104 040502
[469] Alicea J 2010 Phys. Rev. B 81 125318
[470] Lutchyn R M, Sau J D and Das Sarma S 2010 Phys. Rev.
[504] Virtanen P and Recher P 2013 Phys. Rev. B 88 144507
[505] Potter A C and Fu L 2013 Phys. Rev. B 88 121109
[506] Zhang F and Kane C L 2014 Phys. Rev. Lett. 113 036401
[507] Lee S P, Michaeli K, Alicea J and Yacoby A 2014 Phys.
Lett. 105 077001
Rev. Lett. 113 197001
[471] Oreg Y, Refael G and von Oppen F 2010 Phys. Rev. Lett.
[508] Dmytruk O, Trif M and Simon P 2016 Phys. Rev. B 94
105 177002
115423
[472] Nadj-Perge S, Drozdov I K, Bernevig B A and Yazdani A
[509] Peng Y, Vinkler-Aviv Y, Brouwer P W, Glazman L I and
2013 Phys. Rev. B 88 020407
[473] Pientka F, Glazman L I and von Oppen F 2013 Phys. Rev.
B 88 155420
von Oppen F 2016 Phys. Rev. Lett. 117 267001
[510] Hui H Y and Sau J D 2017 Phys. Rev. B 95 014505
[511] Vinkler-Aviv Y, Brouwer P W and von Oppen F 2017
[474] Klinovaja J, Stano P, Yazdani A and Loss D 2013 Phys.
Phys. Rev. B 96 195421
Rev. Lett. 111 186805
[475] Flensberg K 2011 Phys. Rev. Lett. 106 090503
[476] Bonderson P and Lutchyn R M 2011 Phys. Rev. Lett. 106
130505
[477] Hyart T, van Heck B, Fulga I C, Burrello M, Akhmerov
A R and Beenakker C W J 2013 Phys. Rev. B 88 035121
[478] Mourik V, Zuo K, Frolov S M, Plissard S R, Bakkers
E P A M and Kouwenhoven L P 2012 Science 336 1003
[479] Das A, Ronen Y, Most Y, Oreg Y, Heiblum M and
[512] Dom´ınguez F et al. 2017 Phys. Rev. B 95 195430
[513] Pic´o-Cort´es J, Dom´ınguez F and Platero G 2017 Phys.
Rev. B 96 125438
[514] Cayao J, San-Jose P, Black-Schaffer A M, Aguado R and
Prada E 2017 Phys. Rev. B 96 205425
[515] Trif M, Dmytruk O, Bouchiat H, Aguado R and Simon P
2018 Phys. Rev. B 97 041415
[516] Sun D and Liu J 2018 Phys. Rev. B 97 035311
[517] Li Y H, Song J, Liu J, Jiang H, Sun Q F and Xie X C
CONTENTS
56
2018 Phys. Rev. B 97 045423
Rev. B 92 125443
[518] Sticlet D, Sau J D and Akhmerov A 2018 Phys. Rev. B
98 125124
[519] Feng J J, Huang Z, Wang Z and Niu Q 2018 Phys. Rev. B
[559] Tokatly I V 2017 Phys. Rev. B 96 060502
[560] Mineev V P and Samokhin K V 1994 JETP 78 401
[561] Mineev V P and Samokhin K V 2008 Phys. Rev. B 78
98 134515
144503
[520] Mohanta N, Kampf A P and Kopp T 2018 Phys. Rev. B
97 214507
[521] Chiu C K and Das Sarma S 2019 Phys. Rev. B 99 035312
[522] Rodr´ıguez-Mota R, Vishveshwara S and Pereg-Barnea T
2019 Phys. Rev. B 99 024517
[523] Tkachov G 2019 J. Phys.: Condens. Matter 31 175301
[524] Tkachov G 2019 Phys. Rev. B 100 035403
[525] Shapiro S 1963 Phys. Rev. Lett. 11 80
[526] Yokoyama T 2012 Phys. Rev. B 86 075410
[527] Olund C T and Zhao E 2012 Phys. Rev. B 86 214515
[528] Snelder M, Veldhorst M, Golubov A A and Brinkman A
[562] Sigrist M 2009 AIP AIP Conf. Proc. 1162 55
[563] Sergienko I A and Curnoe S H 2004 Phys. Rev. B 70
214510
[564] Edelstein V M 2003 Phys. Rev. B 67 020505
[565] Stanescu T D, Sau J D, Lutchyn R M and Das Sarma S
2010 Phys. Rev. B 81 241310
[566] Potter A C and Lee P A 2011 Phys. Rev. B 83 184520
[567] Lababidi M and Zhao E 2011 Phys. Rev. B 83 184511
[568] Ito Y, Yamaji Y and Imada M 2011 Journal of the Physical
Society of Japan 80 063704
[569] Khaymovich I M, Chtchelkatchev N M and Vinokur V M
2013 Phys. Rev. B 87 104507
2011 Phys. Rev. B 84 075142
[529] Tkachov G and Hankiewicz E M 2013 Phys. Rev. B 88
075401
[570] Virtanen P and Recher P 2012 Phys. Rev. B 85 035310
[571] Annunziata G, Manske D and Linder J 2012 Phys. Rev. B
[530] Zhang K H, Zhu Z G, Wang Z C, Zheng Q R and Su G
86 174514
2014 Phys. Lett. A 378 3131
[572] Black-Schaffer A M and Balatsky A V 2012 Phys. Rev. B
[531] Bai C and Yang Y 2014 Nanoscale Res. Lett. 9 515
[532] Khezerlou M and Goudarzi H 2015 Int. J. Mod. Phys. B
86 144506
[573] Black-Schaffer A M and Balatsky A V 2013 Phys. Rev. B
29 1550018
87 220506
[533] Khezerlou M and Goudarzi H 2015 Phys. C 508 6
[534] Tkachov G, Burset P, Trauzettel B and Hankiewicz E M
2015 Phys. Rev. B 92 045408
[574] Tkachov G 2013 Phys. Rev. B 87 245422
[575] Zyuzin A A and Loss D 2014 Phys. Rev. B 90 125443
[576] Burset P, Lu B, Tkachov G, Tanaka Y, Hankiewicz E M
[535] Dolcini F, Houzet M and Meyer J S 2015 Phys. Rev. B 92
and Trauzettel B 2015 Phys. Rev. B 92 205424
035428
[577] Cr´epin F, Burset P and Trauzettel B 2015 Phys. Rev. B
[536] Lu B, Burset P, Yada K and Tanaka Y 2015 Supercond.
92 100507
Sci. Technol. 28 105001
[537] Snelder M, Golubov A A, Asano Y and Brinkman A 2015
J. Phys.: Condens. Matter 27 315701
[538] Tkachov G 2015 Topological Insulators: The Physics of
Spin Helicity in Quantum Transport (New York: Pan
Stanford Publishing)
[539] Zyuzin A, Alidoust M, Klinovaja J and Loss D 2015 Phys.
Rev. B 92 174515
[578] Reeg C R and Maslov D L 2015 Phys. Rev. B 92 134512
[579] Yu T and Wu M W 2016 Phys. Rev. B 93 195308
[580] Yu T and Wu M W 2017 Phys. Rev. B 96 155312
[581] Bobkova I V and Bobkov A M 2017 Phys. Rev. B 95
184518
[582] Tkachov G 2017 Phys. Rev. Lett. 118 016802
[583] Vasenko A S, Golubov A A, Silkin V M and Chulkov E V
2017 JETP Lett. 105 497
[540] Song J, Liu H, Liu J, Li Y X, Joynt R, Sun Q f and Xie
[584] Vasenko A S, Golubov A A, Silkin V M and Chulkov E V
X C 2016 Phys. Rev. B 93 195302
2017 J. Phys.: Condens. Matter 29 295502
[541] Zyuzin A, Alidoust M and Loss D 2016 Phys. Rev. B 93
[585] Hugdal H G, Linder J and Jacobsen S H 2017 Phys. Rev.
214502
B 95 235403
[542] Bobkova I V, Bobkov A M, Zyuzin A A and Alidoust M
[586] Cayao J and Black-Schaffer A M 2017 Phys. Rev. B 96
2016 Phys. Rev. B 94 134506
155426
[543] Choudhari T and Deo N 2017 Phys. E 85 238
[544] Tkachov G 2017 Phys. Rev. B 95 245407
[545] Yu Q, Tao Z, Song J, Tao Y C and Wang J 2017 Sci. Rep.
7 10723
[546] Alidoust M and Hamzehpour H 2017 Phys. Rev. B 96
165422
[547] Blasi G, Taddei F, Giovannetti V and Braggio A 2019
[587] Lu B and Tanaka Y 2018 Philos. Trans. Royal Soc. A 376
20150246
[588] Volkov A, Magn´ee P, van Wees B and Klapwijk T 1995
Phys. C 242 261
[589] Tkachov G and Fal'ko V I 2004 Phys. Rev. B 69 092503
[590] Tkachov G 2005 Phys. C 417 127
[591] Fagas G, Tkachov G, Pfund A and Richter K 2005 Phys.
Phys. Rev. B 99 064514
Rev. B 71 224510
[548] Rouco M, Tokatly I V and Bergeret F S 2019 Phys. Rev.
B 99 094514
[549] Khezerlou M and Goudarzi H 2019 Mass-like gap creation
by mixed singlet and triplet state in superconducting
topological insulator (Preprint arXiv:1903.01144)
[550] Tanaka Y and Kashiwaya S 1997 Phys. Rev. B 56
[551] Bauer E and Sigrist M (eds) 2012 Non-Centrosymmetric
Superconductors: Introduction and Overview (Lecture
Notes in Physics vol 847) (Berlin: Springer)
[552] Yip S 2014 Annu. Rev. Condens. Matter Phys. 5 15
[553] Samokhin K 2015 Ann. Phys. 359 385
[554] Smidman M, Salamon M B, Yuan H Q and Agterberg D F
[592] Tkachov G 2007 Phys. Rev. B 76 235409
[593] Rohlfing F, Tkachov G, Otto F, Richter K, Weiss D,
Borghs G and Strunk C 2009 Phys. Rev. B 80 220507
[594] Kopnin N B and Melnikov A S 2011 Phys. Rev. B 84
064524
[595] Kopnin N B, Khaymovich I M and Mel'nikov A S 2013
Phys. Rev. Lett. 110 027003
[596] Bergeret F S, Volkov A F and Efetov K B 2001 Phys. Rev.
Lett. 86 4096
[597] Bergeret F S, Volkov A F and Efetov K B 2005 Rev. Mod.
Phys. 77 1321
[598] Bergeret F S and Tokatly I V 2013 Phys. Rev. Lett. 110
2017 Rep. Prog. Phys. 80 036501
117003
[555] Levitov L S, Nazarov Y V and Eliashberg G M 1985 JETP
Lett. 41 445
[556] Edelstein V M 1995 Phys. Rev. Lett. 75 2004
[557] Yip S K 2002 Phys. Rev. B 65 144508
[558] Konschelle F, Tokatly I V and Bergeret F S 2015 Phys.
[599] Eschrig M 2015 Rep. Prog. Phys. 78 104501
[600] Linder J and Robinson J W A 2015 Nat. Phys. 11 307
[601] Tanaka Y and Golubov A A 2007 Phys. Rev. Lett. 98
037003
[602] Yokoyama T, Tanaka Y and Golubov A A 2007 Phys. Rev.
CONTENTS
B 75 134510
[603] Asano Y and Tanaka Y 2013 Phys. Rev. B 87 104513
[604] Tamura S, Hoshino S and Tanaka Y 2019 Phys. Rev. B 99
184512
[605] Linder J and Balatsky A 2017 Odd-frequency supercon-
ductivity (Preprint arXiv:1709.03986)
[606] Sigrist M and Ueda K 1991 Rev. Mod. Phys. 63 239
[607] Buzdin A I 2005 Rev. Mod. Phys. 77
[608] Fritsch D and Annett J F 2014 J. Phys.: Condens. Matter
26 274212
[609] Fritsch D and Annett J F 2015 Supercond. Sci. Techn. 28
085015
[610] Triola C and Balatsky A V 2016 Phys. Rev. B 94 094518
[611] Tkachov G 2018 J. Phys.: Condens. Matter 31 055301
[612] D'yakonov M I and Perel' V I 1971 JETP Lett. 13 467
[613] Krive I V, Gorelik L Y, Shekhter R I and Jonson M 2004
Low Temp. Phys. 30 398
[614] Buzdin A 2008 Phys. Rev. Lett. 101 107005
[615] Mal'shukov A G, Sadjina S and Brataas A 2010 Phys. Rev.
B 81 060502
[616] Black-Schaffer A M and Linder J 2011 Phys. Rev. B 83
220511
[617] Yokoyama T, Eto M and Nazarov Y V 2013 J. Phys. Soc.
Jpn. 82 054703
[618] Yokoyama T, Eto M and Nazarov Y V 2014 Phys. Rev. B
89 195407
57
2014 Phys. Rev. B 89(17) 174425 URL https://link.
aps.org/doi/10.1103/PhysRevB.89.174425
[637] Liu N, Teng J and Li Y 2018 Nature Communications 9
1282 ISSN 2041-1723 URL https://doi.org/10.1038/
s41467-018-03684-0
[638] Kou X, Guo S T, Fan Y, Pan L, Lang M, Jiang Y, Shao
Q, Nie T, Murata K, Tang J, Wang Y, He L, Lee
T K, Lee W L and Wang K L 2014 Phys. Rev. Lett.
113(13) 137201 URL https://link.aps.org/doi/10.
1103/PhysRevLett.113.137201
[639] Chang C Z, Zhao W, Kim D Y, Zhang H, Assaf B A,
Heiman D, Zhang S C, Liu C, Chan M H W and
Moodera J S 2015 Nature Materials 14 473 EP -- URL
https://doi.org/10.1038/nmat4204
[640] Checkelsky J G, Yoshimi R, Tsukazaki A, Takahashi K S,
Kozuka Y, Fa, Kawasaki M and Tokura Y 2014 Nature
Physics 10 731 EP -- URL https://doi.org/10.1038/
nphys3053
[641] Chang C Z, Zhang J, Feng X, Shen J, Zhang Z, Guo M, Li
K, Ou Y, Wei P, Wang L L, Ji Z Q, Feng Y, Ji S, Chen X,
Jia J, Dai X, Fang Z, Zhang S C, He K, Wang Y, Lu L,
Ma X C and Xue Q K 2013 Science 340 167 -- 170 ISSN
0036-8075
http://science.sciencemag.
org/content/340/6129/167.full.pdf) URL
http:
//science.sciencemag.org/content/340/6129/167
(Preprint
[642] Offidani M and Ferreira A 2018 Phys. Rev. Lett. 121
[619] Alidoust M and Halterman K 2015 New J. Phys. 17
126802
033001
[643] Liu H, Liu W E and Culcer D 2017 Phys. Rev. B 95 205435
[620] Mironov S V, Mel'nikov A S and Buzdin A I 2015 Phys.
Rev. Lett. 114 227001
[621] Mal'shukov A G 2017 Phys. Rev. B 95 064517
[622] Amundsen M and Linder J 2017 Phys. Rev. B 96 064508
[623] Mal'shukov A G and Chu C S 2008 Phys. Rev. B 78
104503
[624] Mal'shukov A G and Chu C S 2011 Phys. Rev. B 84
054520
[625] Bergeret F S and Tokatly I V 2016 Phys. Rev. B 94 180502
[626] Linder J, Amundsen M and Risinggard V 2017 Phys. Rev.
B 96 094512
[627] Mal'shukov A G 2018 Phys. Rev. B 97 064515
[628] Ghosh S and Manchon A 2017 Phys. Rev. B 95 035422
[629] Smejkal L, Mokrousov Y, Yan B and MacDonald A H 2018
Nature Phys. 12 242
[630] Novoselov K S, Mishchenko A, Carvalho A and Neto A H C
2016 Science 353 6298
[631] Tatara G 2018 Phys. Rev. B 98 174422
[632] Zhang J, Chang C Z, Tang P, Zhang Z, Feng X, Li K,
Wang L l, Chen X, Liu C, Duan W, He K, Xue Q K,
Ma X and Wang Y 2013 Science 339 1582 -- 1586 ISSN
0036-8075
http://science.sciencemag.
org/content/339/6127/1582.full.pdf) URL http:
//science.sciencemag.org/content/339/6127/1582
(Preprint
[633] Zhang Z, Feng X, Guo M, Li K, Zhang J, Ou Y, Feng Y,
Wang L, Chen X, He K, Ma X, Xue Q and Wang Y
2014 Nature Communications 5 4915 EP -- article URL
https://doi.org/10.1038/ncomms5915
[634] Chang C Z, Zhang J, Liu M, Zhang Z, Feng X, Li K, Wang
L L, Chen X, Dai X, Fang Z, Qi X L, Zhang S C, Wang
Y, He K, Ma X C and Xue Q K 2013 Advanced Mate-
rials 25 1065 -- 1070 (Preprint https://onlinelibrary.
wiley.com/doi/pdf/10.1002/adma.201203493)
URL
https://onlinelibrary.wiley.com/doi/abs/10.1002/
adma.201203493
[635] Chang C Z, Tang P, Wang Y L, Feng X, Li K, Zhang
Z, Wang Y, Wang L L, Chen X, Liu C, Duan W,
He K, Ma X C and Xue Q K 2014 Phys. Rev. Lett.
112(5) 056801 URL https://link.aps.org/doi/10.
1103/PhysRevLett.112.056801
[636] Lee J S, Richardella A, Rench D W, Fraleigh R D,
Flanagan T C, Borchers J A, Tao J and Samarth N
|
1807.11230 | 1 | 1807 | 2018-07-30T08:44:57 | Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory | [
"cond-mat.mes-hall"
] | The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by means Density Functional Theory. While the system of corrugation crests organized in a honeycomb super-lattice of nano-metric side returned by calculations is compatible with atomic microscopy observations, our work reveals some possible alternative symmetries, which might coexist in the same sample. The electronic structure analysis reveals the presence of an electronic gap of ~0.7eV. In-gap states are present, localized over the crests, while near-gap states reveal very different structure and space localization, being either bonding states or outward pointing p orbitals and unsaturated Si dangling bonds. On one hand, he presence of these interface states was correlated with the n-doping of the monolayer graphene subsequently grown on the buffer. On the other hand, the correlation between their chemical character and their space localization is likely to produce a differential reactivity towards specific functional groups with a spatial regular modulation at the nano-scale, opening perspectives for a finely controlled chemical functionalization. | cond-mat.mes-hall | cond-mat | 56127 Pisa, Italy
Abstract
Intrinsic structural and electronic properties of the Buffer Layer
on Silicon Carbide unraveled by Density Functional Theory
Tommaso Cavallucci and Valentina Tozzini*
NEST- Scuola Normale Superiore and Istituto Nanoscienze, Cnr, Piazza San Silvestro 12,
The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of
silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene.
In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by
means Density Functional Theory. While the system of corrugation crests organized in a honeycomb
super-lattice of nano-metric side returned by calculations is compatible with atomic microscopy
observations, our work reveals some possible alternative symmetries, which might coexist in the same
sample. The electronic structure analysis reveals the presence of an electronic gap of ~0.7eV. In-gap
states are present, localized over the crests, while near-gap states reveal very different structure and space
localization, being either bonding states or outward pointing p orbitals and unsaturated Si dangling bonds.
On one hand, he presence of these interface states was correlated with the n-doping of the monolayer
graphene subsequently grown on the buffer. On the other hand, the correlation between their chemical
character and their space localization is likely to produce a differential reactivity towards specific
functional groups with a spatial regular modulation at the nano-scale, opening perspectives for a finely
controlled chemical functionalization.
1. Introduction
The thermal decomposition of silicon carbide (SiC) is a widely used technique to produce supported
graphene1. Upon selective evaporation of Si from a Si-rich face of SiC (typically the 111 of 4C or the
0001 of hexagonal polytypes), excess carbon reconstruction produces in the first instance a honeycomb
carbon layer covalently bound to the substrate called the buffer layer2 (BL). Due to the non negligible
residual amount of sp3 hybridized sites, the BL is not graphene, but the latter can be obtained from it
either by further evaporation of Si, producing the so called "epitaxial" graphene monolayer (EM), or by
intercalation of hydrogen3 or metals4 underneath the buffer layer (Quasi Free Standing Monolayer
Graphene, QFSMG5). In both cases, the (electronic) structure of the BL is a determinant of the graphene
properties: in EM, the rippling of the BL determines the corrugation of the graphene sheet6 as observed in
Scanning Tunneling Microscopy (STM)7,8. In QFSMG, the interaction with the BL is very weak, but
vacancies in the intercalation layer produce localized states, appearing located in regular patterns9,10
which were proposed to descend from the BL symmetry11. Finally, the n-doping observed in EM was
attributed to the effects of the surface states of the BL12.
a pattern of corrugation appearing organized in crests forming an honeycomb-like lattice of nano-sized
edge, whose periodicity was recognized as a "quasi" 6!6 (of SiC). However, analyses at low temperature
somehow debated in the literature. Atomically resolved microscopy analyses at high temperature! reveal
and different voltages",13,14 reveal different electronic structures, appearing more sharp and localized, and
with the experimental observations. For QFSMG,#$,##, we recently proposed a alternative symmetry,
different possible symmetries, including the 6"3!6"3 R30, which is the smaller consensus supercell
between graphene and SiC when the two lattices are rotated of exactly 30 deg. This supercell is
considered the "standard one" in several theoretical studies on BL, EM or QFSMG15,16,17,18,19. In some of
these, the BL structure was studied and actually revealed a system of crests of ~1Å high, in agreement
The conformation and electronic structure of the BL is therefore of primary importance, and
namely "31!"31 R8.95 (of SiC), obtained by a slight rotation of the two lattices, and leading to a 1/3
sized consensus supercell which allows extensive calculations.
At variance of those of EM and QFSMG, however, the electronic properties of the BL alone received
little attention: only very recently an ARPES20 measurement has revealed the presence of a small band
gap (~0.5eV) whose origin was not clearly attributed. The reason of the scarce interest towards this
system is that it is usually considered only a support system to generate the most interesting one, that is,
graphene.
In this work we adopt a different point of view, focusing on the BL itself. We are moved by two aims.
The first is to clarify details of the structure of this system, since this influences the structure of EM and
QFSMLG and can shed light on the kinetics of their formation processes, still basically unknown. The
second is the analysis of the electronic structure of the BL as a system per se, to envision whether the
specific properties of the BL could be exploited for applications. Our investigation tool is Density
Functional Theory (DFT). The calculation scheme is reviewed in the next section, also including a
description of the model systems, especially the non-standard ones, used for here the first time with BL.
The subsequent section illustrates the results. Summary and discussion on perspectives for applications
are reported in the last section.
2. Models and methods
2.1 Model Systems
The two model systems analyzed in this work are reported in Fig 1. The first one is the 6"3!6"3 R30 of
SiC (or 13!13 of graphene, Fig 1, top part), considered the "standard" simulation cell for the
SiC/graphene systems (hereafter called "L"). We included four SiC layers of the cubic polytype, and
saturated the last one with H. In this work we also considered a smaller ("S") supercell recently used and
validated for the QFSMG#$,##, the "31!"31 R8.95 of SiC (or 7!7 R21.787 of graphene, Fig 1, bottom
part). In this case, the consensus between graphene and SiC supercells is obtained by allowing a small
relative rotation (< 1 deg with respect to that in L model) of the two lattices and slightly different
contraction of the buffer: in S model the surface density of the buffer atoms is 0.9% larger than in the L
model. In the S supercell the BL can have two different stacking conformations## with respect to SiC,
allowing respectively one site of type "hollow", i.e. with a Si atom lying under the center of a BL
hexagon (Sh model) and one site of type "top", i.e. with Si atom lying under a C atom (St model, see red
circles in Fig 1). These models are built locating a flat hexagonal carbon layer on the top of a neatly cut
SiC surface at a distance slightly larger than the presumed bond distance and then relaxing (see next
section for calculation details). The S supercell includes less than 1/3 atoms of the L one, reducing the
computational of roughly one order of magnitude.
Fig 1. Model systems used in this work. Top and side views of the large (L) model and small models with
"hollow" (Sh) and "top" (St) buffer stacking are reported (red circles indicate the hollow and top sites). The lattice
vectors in the xy plane are represented as blue arrows, and their values reported. Orange arrows indicate the
crystallographic directions of the SiC lattice, cyan arrows those of graphene, their relative rotation is reported. The
thick arrows indicate the projection directions of the side views. L model includes 1310 atoms, and S models
include 377 atoms each. Color coding: black = Carbon of the BL, cyan = carbon of SiC, yellow = Si, white = H.
The views show the structurally optimized geometries.
DFT calculations are performed with a setup previously tested on this kind of systems%. The Rappe-Rabe-
2.2 Calculations Setup
Kaxiras-Joannopoulos ultrasoft (RRKJUS) pseudopotentials21 are used with the Perdew-Burke-Ernzerhof
(PBE) exchange-correlation functional22, van der Waals interactions are treated within the semi-empirical
Grimme D2 scheme23 (PBE-D2). The plane wave cutoff energy was set at 30 Ry and the density cutoff at
300 Ry, while the convergence threshold for self-consistency was set at 10-8. The BFGS quasi-Newton
algorithm was used for structural optimizations24, with standard convergence criteria, i.e. 10-3 a.u. for the
forces and 10-4 a.u. for the energy. # point only is used for structural optimization, while for calculations
of the density of states (DoS) we used a 10!10!1 grid generated using the Monkhorst and Pack scheme25
for S supercells and a 5!5!1 grid for L. A Gaussian smearing of 0.01 Ry was set in all calculations. The
lattice vectors of the supercells in the xy plane (reported in Fig 1) are chosen in such a way to have a
relaxed SiC crystal. The third supercell parameter, in z direction, is the same in all cases (31.8Å), chosen
large enough to decouple the periodic copies. The calculations were performed using Quantum
ESPRESSO26 (QE, version 5.3.0). Numerical data generated during this study are available from the
corresponding author upon reasonable requests.
3. Results
In this section the results of this study are reported. The rippling pattern of the L model (part of section
3.1), were previously described by us% and others&. However to our knowledge a deep-in characterization
of the structural features of the buffer in L or in the alternative models S was never reported. We believe
that it is important to fill this gap, especially for the interpretation of energetic and electronic data,
reported in the subsequent subsections.
3.1 General structural properties
The main structural properties are summarized in Fig 2. As it can be seen from panel (a), the structure of
SiC lattice is rather regular in the bottom layer, and becomes less regular in the layer nearer to the surface,
as indicated by the larger spread of the z coordinate distributions. The BL is located at an average
distance of 2.4 Å from the Si layer, and displays a large vertical spread due to its rippling. The ripples are
organized in specific patterns, clearly visible in panels (b)-(d) of Fig 2 (bright areas are protruding). In L
the "crests" form a honeycomb lattice (profiled in yellow in panel (b)) separating three types of hexagonal
irregular "tiles". This pattern is compatible with that observed by STM!,!$, although in those experiment
can produce different sharpness and contrast",#",#'. Indeed, however, the experimental images the
the crests appear smeared. This could be attributed to the thermal fluctuations, not included in these
calculations. In addition, it should be considered that STM images depend on voltage, whose variation
hexagonal "tiles" appears somehow more regular than those in L model. Interestingly, the corrugation
pattern arising from model Sh, here first reported, is more similar in this respect, displaying only one kind
of regular tile. The pattern of model St is instead formed by distorted hexagons, appearing "broken" on
two sides. This situation appear similar to some what observed in some region of the STM of ref [2],
where the crests seem to form rather parallel zig-zag lines weakly connected.
Fig 2. Structure of the buffer layer. (a) A side view of the system (specifically L model) with the average z
coordinate of the layers reported. On the right, with the same scale, the distribution of the z coordinates of all
atoms are reported, for the L, Sh and St model separately (color coding in the plot). Panels (b) to (d) report top
views of the buffer layer (in vdW spheres representation), colored according to the z coordinate (bright grey
protruding areas, dark=intruding). Yellow lines follow the profile of protruding areas. The cyan circles highlight
the groups of benzene-like rings. Superimposed as yellow balls in the top right corner are the locations of the upper
layer Si atoms. The inset (e) shows a zoom-in of the white profiled area in panel (c). In (e), location of Si atoms are
also indicated as green and pink dots. Pink arrows in panels (b)-(d) indicate the zig-zag direction of graphene.
Locally, the BL appears organized in benzene-like units (highlighted by blue circles in panels (b-d)).
In the zoomed inset (panel (e)) the crests appear formed by interconnected chains of those (broken) units,
while the tiles include six, seven or eight benzene units, separated by intruding C atoms (colored in black
and indicated by the pink dots in (e)). By comparing with the location of the Si atoms of the upper layer
(yellow balls), it can be seen that each of the intruding C atom is located on top of a Si atom. As it will be
shown in the next sections, they are actually covalently bound. However, not all the Si atoms are bonded
to C. For instance, the central Si atom colored in green in panel (d) is found in a hollow position i.e. in the
center of the benzene unit, and it is unbound. Top and hollow position roughly alternate, but the mismatch
between the lattices unregisters the stacking. This modulated alternating of favorable (top) and
unregistered relative C-Si positions creates the specific patterns of bonds of crests and benzene sub-units.
3.2 Bonding patterns
Fig 3 (a), reports the z profiles evaluated along different zig-zag lines in the three models shown in Fig 3
(b-d). The Si bonded C atoms are easily identified as those pointing downward, and are regularly
separated by groups of C atoms belonging to the benzene units; the crest areas can be recognized as those
pointing upwards. As it can be seen, the profiles of the L model (black and blue line in the bottom and top
plot respectively) have the super-cell periodicity of ~3.2 nm, while the profiles of S models (magenta,
green and red) are only approximately periodic, since the zig-zag line is not perfectly aligned to the crests,
due to the rotation angle between substrate and BL. Nevertheless, the crests structures of the three models
are locally superimposable (black vs magenta lines, belonging to L and Sh respectively, and red vs blue
lines, belonging to L and St). The green profile is the most different of all, because it crosses the "broken
crest", which is a peculiarity of the St model.
The covalent bonds between BL and the substrate can be identified in different ways: (i) by selecting
the buffer layer atoms pointing downwards, or (ii) those at short distance from a Si atom, or (iii) by
searching for the effective charge localization between buffer and substrate. Method (i) is the simplest but
ambiguous, because the tail of distribution of z coordinates of bound and unbound atoms superimpose.
Method (ii) identifies better the bound atoms, being the bond length distributed at ~2Å. Finally, method
(iii) gives an immediate idea of the bonding pattern: Fig 3 (f-h) reports a representation of the total charge
density evaluated on a plane located mid-way between the buffer and the substrate, as shown in (e).
Bonds can be identified as charge density accumulation points (bright spots), located below a sub-set of
the BL atoms. These are colored in pink in the superimposed image, and as anticipated, are distributed on
a specific hexagonal pattern, alternating with the "benzene" rings (in cyan) appearing as grey hexagon in
(b)-(d) and (f)-(h) due to their $ orbitals structure. (The atoms of the crests appear dark in the image
because they are unbound and far above the representation plane.) Fig 3 panels (f-h) also confirm the
local resemblance of patterns of model L to that of model Sh and St. A comparative analysis of the three
methods is reported in the SI.
3.3 Formation energies
The evaluation of relative energies of L and S models is not straightforward, because they have different
sizes. One possibility is to normalize to the area of the cell, or equivalently, to the number of surface Si
atoms. However, the surface density of atoms of the carbon layer is higher in the S model of ~1% (and,
correspondingly, the corrugation level is of 2% larger see Table 1, two last columns). Therefore, a second
non-equivalent normalization is to the number of atoms the BL. Even the evaluation of the total energy
itself is non trivial. The global stability could be evaluated considering the formation energy Ef, i.e. the
energy with respect to the sum of energy of all isolated atoms
!!!!!"#! !!!!!!!!!!!!"!!"
When renormalize to the unit surface, Ef can be used as a measure of the relative stability, although it
is not very meaningful per se, being dependent on the number of layers of bulk included in the model.
The binding/dissociation energy of the BL was also evaluated, but it is less appropriate considering that
the synthesis proceeds from the bulk (details in the SI).
The analysis of the energies indicates that Sh model is more stable than St model of about 0.01eV per
surface Si atom. This is likely to be due to a more symmetric conformation of the bonding pattern, since
the concentration of C atoms and the level of corrugation is basically the same in St and Sh. Additionally,
S models turns out more stable of L of ~4.8 eV/Si surface atom. Because the main difference between S
and L is the surface C density of the buffer, this points to a preference of the system for a slightly larger
concentration, such as in S model. In general, however, the stabilization is likely to arise from the
interplay between the different corrugation level (see Table 1) and the different arrangement/symmetry of
the Si-C bonds and of the crests. Conversely, when one considers the formation energy per C buffer atom,
the trend is inverted and L results lower than S of about 3.9 eV/ C atom. On the formal level, this is
trivially due to the different surface concentration of C atoms in the two models and seems to indicate that
the BL is more relaxed within the L model.
Fig 3. (a) z profiles of the BL atoms along the zig-zag lines depicted in panels (b)-(d), for the models L (b), Sh (c) and St (d)
(colors of lines and plots correspond). The profiles are built including all the atoms of a single zig-zag line, the l coordinate being
the projection of x-y coordinate onto this line. This imply that the separation of dots along the l coordinate of ~1.23Å. The AFM-
like images (b)-(d) are obtained from the iso-density surfaces of the total electronic charge density, colored according to the eight
(bright protruding, dynamical range of coloring = 1Å). In panels (e)-(h) the charge density is evaluated on a plane located
between the buffer layer and the substrate, as shown in panel (e). Panels (e-f) report the value of the charge density on the plane
(bright high density, dark low density), for models L (f), Sh (g) and St (h). Superimposed in red is the BL structure, and in colors
the atoms of BL of the three different types: bound to SiC, "benzene-like" rings and crests, colored as shown in the color coding
legenda in panel (e).
38.306
38.654
38.654
14.8
15.1
15.2
Ef (eV)
NSi NC
338
98
98
Ef/NC (eV)
-534.7286
-530.8805
-530.8776
Ef/NSi (eV)
-1673.5024
-1678.2675
-1678.2581
Nb Nb /NC NC/S (nm-2) <!2>1/2 (deg)
83 24.6%
24 24.5%
25 25.5%
L -180738.25 108
Sh -52026.293 31
St -52026.000 31
Table 1 Formation Ef and binding energies Eb of the three model systems as defined in the main text, and normalized to the to
the number of Si surface atoms, of C buffer atoms and to the number of Si-C bonds, also reported. The average surface density
of the buffer atoms, NC/S and the average corrugation level of the buffer, as measured by the standard deviation from zero of
the out of plane dihedral are also reported <!2>1/2.
3.4 Electronic properties
The electronic Density of States (DoS) for all models are reported in Fig 4. Once aligned to the Fermi
level, they show the same global structure, displaying a low DoS area ~0.7 eV large, delimited by two
rapidly increasing wings. This is an electronic gap of size comparable of that reported in ref [20],
although a n-doping is present being the Fermi level located above the gap. A zoom in of the DoS (lower
plot Fig 4) reveals some differences between the three models. Some residual DoS is present in the gap,
revealing some more or less pronounced or separated "peaks" in the three models. The local DoS
integrated in the gap range is reported as insets in Fig 4 (iso-density surfaces, in red), and clearly reveals
that in-gap states are localized over the crests in the three cases. At a first sight, these states appear to be
the $ orbitals of the protruding C atoms. For the St case, where two separate peaks are clearly visible, we
integrated over them separately (intervals indicated in yellow and purple in the plot). The inset on the
right shows in corresponding colors the separated local DoS, and reveals that the lower energy in-gap
peak (yellow) belong to states located on the more irregular sites, while the states belonging to higher
energy in-gap peak (magenta) follow the more regular hexagonal pattern, which explains why in the Sh
case only one peak (the "regular" one) is present, being the symmetry higher.
Fig 4. Total electronic DoS the L and S models. In the upper plot, the total DoS in the full energy range is reported for
the three models (color coding reported) aligned to the Fermi Level. The shaded area includes the filled states. In the
lower plot a zoom around the Fermi level is reported (same color coding for the lines). The three central insets report in
red an iso-surface representation of the Local DoS integrated within the "gap" range [-0.7;-1.4] (the models are
indicated and the insets are profiled with the same color coding of the lines); in the side inset profiled in green, the DoS
of the St model integrated over the two separated in-gap peaks in the intervals indicated in yellow and purple in the plot
are reported separately (in corresponding colors).
We systematically performed this analysis in other four energy intervals, namely the left wing (LW)
and the right wing (RW) of the gap up to the Fermi level, and the the "LUMO" state, including a the
lower unoccupied states up to 1eV (boundaries of the intervals indicated by vertical lines in Fig 4, lower
plot). The local DoS of these intervals (and of the gap) are reported in Fig 5 in different representations
aimed at showing the vertical localization of the states: The first two representations ("STM" and "vol
slice over") display the electronic density on top of the buffer layer, and could be compared with STM
images in fixed current and fixed height mode, respectively. The third one ("vol slice under") is obtained
plotting the density in a plane located between the buffer and the substrate, and displays the inner part of
the charge density. This analysis confirms that the in-gap states (second column from the left) are
basically localized in the crests area: the superficial images show density localized on the protruding C
atoms of the crests, while the inner image shows density localized under the C atoms intruding, i.e. those
covalently bound to the substrate. Overall, then, the in-gap states represent bonding orbitals either
between the crests atoms or between the intruding crests atoms and the substrate. The in-gap states do not
display charge density on the "benzene" units.
Conversely, the distribution of the LW states is localized on the benzene units, or under them, as
shown by the "slice under" images. Besides those clearly visible rings, the inner images show also density
localized under the C sites interstitial between rings, which are bonded to the substrate. Also the
superficial image shows density on the benzene rings, visible as small circles within the larger hexagonal
shapes delimited by crests, besides some residual density of the $ orbitals over the protruding atoms.
Overall, these states appear to have bonding character, either between the out of crest atoms, or between
them and the substrate.
The charge density of the states of the RW below the Fermi level has a strong inner component under
the "tiles", which appear however to be different, being localized over Si atoms located in the hollow
positions, and therefore these states do not participate to the covalent bonding to the substrate, but are
rather "dangling Si bonds". The superficial charge density is localized mainly on the crests, but appears to
be a sum of localized pz orbitals rather than a $ system. These two aspects are similar and enhanced in the
"LUMO" states: the superficial states are protruding pz orbitals and the inner states are dangling bonds
under the "benzene rings" (although with a different symmetry with respect to the RW states). Overall,
then, the states above the gap appear to have an increasing anti-bonding character.
4. Discussion and conclusions
In this work we have comparatively analyzed results from three different model systems for the buffer
carbon layer on the Si-rich surface of SiC: the "standard one" (L) with exactly 30 deg rotation between
the SiC and buffer lattices, 13!13 / 6"3!6"3 supercells and a superficial C buffer atoms density of ~38.3
C atom/nm2, and two alternative ones (Sh and St with 7!7 / "31!"31 supercells), with a slightly different
rotation between the two lattices (~29 deg), slightly larger superficial C density (~38.7 C/nm2). L is fully
compatible with the (quasi) 6!6/SiC supercell, while S models are compatible only approximately.
The three models share common general structural features: a system of crests of alternating
protruding and intruding C atoms forming an honeycomb pattern and separating hexagonal "tiles" of
~1nm side. Within the "tiles" carbon organizes in "benzene-like" rings, separated by intruding C sites.
These and the intruding sites in the crests are covalently bound to Si atoms of the substrate. The main
differences between the three models are in the form of the "tiles": these are regular hexagons in the Sh
model, distorted hexagons with partially broken sides in St, while in the L model three different types of
hexagons, one regular and two distorted are present. The comparison with the atomic microscopy data
does not completely solve the ambiguity between the models: AFM and STM images clearly show the
honeycomb system of crests of size compatible with all of them. Small irregularities of the tiles seem to
appear in some images!$,#", while in others they are not visible!. In general, however, crests appear
smeared and regularized with respect to L model. While both the effects could be attributed to the already
mentioned thermal fluctuations (neglected in our calculations), the regularization is an indication in favor
of Sh model.
Some features of the fine structure we observe, e.g. the "benzene-like rings", are barely reported in the
literature. However, we observe that these need very high resolution and specific voltage conditions to be
revealed. In fact, structures that resemble those of Fig 5, with modulation of contrast on the crests and
within the tiles similar to benzene rings were observed in ref [#'], where a systematic study at different
voltages and temperature was performed. In summary, the theory-experiment comparison of structural
data would indicate that none of the models should be excluded.
Fig 5. Local DoSs integrated over different energy intervals (columns: LW= left wing [-2.3;-1.4]; gap [-1.4; -
0.7]; RW= right wing [-0.7;0]; "LUMO" [0;+1]) for the three different models (from top to bottom: Sh, St and
L, each represented in three different modes: STM = "fixed current" mode, obtained coloring an iso-density
surface (~10-4 a.u.) according to the height; "vol slice over" obtained coloring a plane placed over the layer
according to the local value of the density, and "vol slice under", same but with the plane placed between the
buffer -- reported in red in wireframe representation -- and the substrate (the location of the two planes is
represented in the forth row, first cell). Also represented are an iso-density surface of the "gap" local DoS (in
red, first row, first cell) and of the LUMO state (in red, 7th row, first cell).
Other indications come from the analysis of stability. The comparison between L and S models
indicates that the formation energy per unit surface is smaller for the S models (the smallest for Sh), while
the same evaluated per C atom of the BL is smaller for L. This is not a contradiction, however, because
the superficial concentration of C atoms of the buffer is larger in S models. It might seem not intuitive
that a more crowded (and consequently more corrugated) conformation is more stable than a more
"diluted" (and slightly flatter). However, one must consider that the buffer is not a completely flat sp2
graphene, nor even a completely sp3 hybridized graphane-like sheet, but a combination of the two, whose
optimal corrugation/contraction level is not easy to evaluate a priori. Therefore it is not straightforward to
estimate which is the optimal superficial density of C atoms in the buffer. In addition, Sh conformation
might be structurally favored by its high symmetry, bringing a particularly favorable binding pattern. This
conclusion is also compatible with a recent general theoretical analysis showing that conformations with
relative rotations of lattices with low commensuration might help releasing the strain27.
Our results for the electronic structure return similar DoS for the three models, displaying a gap
approximately 0.7 eV wide, with localized in-gap states and n-doping. We remark that, while a similar n-
doping level is reported in the theoretical calculations (e.g. !$), this is not fully confirmed by experiments,
the bulk polarization in the theoretical calculations ##,!$. However, the doping level is not likely to affect
which seem rather to indicate the Fermi level located in proximity of the gap or within it. This may be
attributed to different causes: extrinsic doping induction from the experimental setup or poor treatment of
the features (shape, localization, extension) of the electronic states, which in fact, appear to be fully
compatible with the structural analysis. The basically non-dispersive in-gap states appear to descend from
the $ orbital system of the crests atoms and are fully localized on them, constituting the binding system
between crests atoms or among them and the substrate. The specific space distribution of those state of
course depends on the model (being the crests different in the three models) and in particular the
symmetry breaking occurring in Sh seems to split the in-gap state in two distinct ones, with separate
spatial distribution, while this splitting is not observed in the more symmetric Sh model.
Furthermore, just below the gap, we observe a more conventional $ binding system, localized in the
"benzene like" rings within the "tiles", though with some residual density on the crests. On the other side,
above the gap, we revealed a set of dangling Si bonds localized underneath the buffer layer, and a set of
pz orbitals mainly localized over the crests and in proximity of them. These states might have relevance in
the intrinsic doping of the graphene monolayer on BL, when present, which was attributed to donor
surface states either of the buffer or of the SiC surface#!. The experimental observation of this variety of
mentioned benzene rings#', localized pz orbitals or dangling bonds#", often organized in triangular or
states requires a systematic study STM analysis of the BL at different voltages, performed only in a few
studies, which in fact, reveal the presence of structures we observe in our analysis, such as the already
hexagonal symmetries, compatible with our models. In those images both regular and irregular hexagonal
"tiles" are observed, as far as areas with broken crests typical of St model.
In summary, our work does not completely solve the problem of which is the exact symmetry and
conformation of the BL, conversely suggesting that different symmetries might coexist and possibly inter-
convert at sufficiently high temperature. The symmetry of L gives a more extended spatial
commensurability, a relative rotation that seems globally more compatible apparently exact 30 deg
rotation of the two lattices. However S models seems to be locally more stable. The preference for one or
the other conformation should be investigated accounting also for the kinetics of the buffer formation,
which is currently under investigation and matter of a forthcoming paper 28. From the modeling
perspective, S models are much less expensive, and certainly a good approximation of the real sample.
The peculiar structural and electronic properties of the BL suggest interesting applications. The
corrugation and the considerable variability of electronic structure between crests and "tiles" suggest that
this system is particularly reactive29: states localized in the different energy regions (gap, and its sides)
display well separate spatial localization and very different (sometimes opposite) "chemical" character.
The correlation between these two features suggests that different chemical species (e.g. electrophilic,
nucleophile, or dienophile) might select different spatial areas, following the moiré superlattice, offering a
unique potentiality of obtaining a nano-patterned chemical functionalization.
Acknowledgments
We thank Dr. Stefan Heun, Prof. Paolo Giannozzi, Dr Luca Bellucci, Dr. Camilla Coletti, Dr. Yuya
Murata, and Dr. Vittorio Pellegrini for useful discussions. We gratefully acknowledge financial support
by EU-H2020, Graphene-Core1 (agreement No 696656) and Core2 (agreement No 725219), by CINECA
awards IsB11_flexogra (2015), IsC36_ElMaGRe (2015), IsC44_QFSGvac (2016), IsC44_ReIMCGr
(2016) and PRACE "Tier0" award Pra13_2016143310 (2016). We acknowledge CINECA staff for
technical support.
Author contributions
TC performed calculations, produced data and performed part of the analyses. VT finalized the analyses,
produced the figures and wrote the manuscript.
Additional information
Competing interest: the authors declare no competing interests.
References
((((((((((((((((((((((((((((((((((((((((((((((((((((((((
1 Norimatsu, W.; Kusunoki, M. Epitaxial Graphene on SiC{0001}: Advances and Perspectives. Phys. Chem. Chem. Phys. 16,
3501 (2014)
2 Goler, S.; Coletti, C.; Piazza, V.; Pingue, P.; Colangelo, F.; Pellegrini, V.; Emtsev, K. V.; Forti, S.; Starke, S.; et al. Revealing
the Atomic Structure of the Buffer Layer between SiC (0001) and Epitaxial Graphene. Carbon 51, 249%254 (2013)
3 Riedl, C.; Coletti, C.; Starke, U. Structural and Electronic Properties of Epitaxial Graphene on SiC(0001): a Review of Growth,
Characterization, Transfer Doping and Hydrogen Intercalation. J. Phys. D: Appl. Phys. 43, 374009 (2010)
4 Fiori S, Murata Y, Veronesi S, Rossi A, Coletti C, and Heun S Li-intercalated graphene on SiC(0001): An STM study Phys. Rev.
B 96, 125429 (2017)
5 Riedl C., Coletti C., Iwasaki T., Zakharov A. A., and Starke U. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by
Hydrogen Intercalation Phys. Rev. Lett. 103, 246804 (2009)
6 Mallet, P.; Varchon, F.; Naud, C.; Magaud, L.; Berger, C.; Veuillen, J. Y. Electron States of Mono- and Bilayer Graphene on Si
Probed by Scanning-Tunneling Microscopy. Phys. Rev. B:. 76, 041403 (2007)
7 Telychko, M.; Berger, J.; Majzik, Z.; Jelínek, P.; !vec, M. Graphene on SiC(0001) Inspected by Synamic Atomic Force
Microscopy at Room Temperature. Beilstein J. Nanotechnol. 6, 901%906 (2015)
8 Cavallucci T and Tozzini V Multistable Rippling of Graphene on SiC: A Density Functional Theory Study J. Phys. Chem. C,
120, 7670%7677 (2016)
9 Murata Y, Mashoff T, Takamura M, Tanabe S, Hibino H, Beltram F, and Heun S, Correlation between morphology and
transport properties of quasi-free-standing monolayer graphene App Phys Lett 105, 221604 (2014)
10 Murata Y, Cavallucci T, Tozzini V, Pavli&ek N, Gross L, Meyer G, Takamura M, Beltram F, Hibino H, Heun S. Atomic and
Electronic Structure of Si Dangling Bonds in Quasi-Free-Standing Monolayer Graphene Nano Res 11 , 864 -- 873 (2018)
11 Cavallucci T, Murata Y, Takamura M, Hibino H, Heun S, Tozzini V, Unraveling localized states in quasi free standing
monolayer graphene by means of Density Functional Theory Carbon 130, 466-474 (2018)
12 Ristein J., Mammadov S., Seyller Th. Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide Phys Rev Lett,
108, 246104 (2012)
13 Riedl C "Epitaxial Graphene on Silicon Carbide Surfaces: Growth, Characterization, Doping and Hydrogen intercalation" PhD
Thesis (2010), Fridrich Alexander Universität Erlangen, Nurberg
14 Hu T. W., Ma F., Ma D. Y., Yang D., Liu X. T., Xu K. W., Chu P.K. Evidence of atomically resolved 6x6 buffer layer with
long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition App Phys Lett,
102, 171910 (2013)
15 Kim, S.; Ihm, J.; Choi, H. J.; Son, Y.-W. Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide.
Phys. Rev. Lett. 100, 176802, (2008)
16 Varchon, F.; Mallet, P.; Veuillen, J.-Y.; Magaud, L. Ripples in Epitaxial Graphene on the Si-terminated SiC(0001) Surface.
Phys. Rev. B: Condens. Matter Mater. Phys. 77, 235412 (2008)
17 Sforzini J., Nemec L., Denig T., Stadtmüller B., Lee T.-L., Kumpf C., Soubatch S., Starke U., Rinke P., Blum V., Bocquet F.
C., and Tautz F. S. Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-
SiC(0001) Phys Rev Lett 114, 106804 (2015)
18 Deretzis I. La Magna A. Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on
SiC(0001) Phys Rev B 84, 235426 (2011)
19 Cavallucci T, Tozzini V Multistable Rippling of Graphene on SiC: A Density Functional Theory Study J of Phys Chemi C 120
7670-7677 (2015)
20 Nair M N., Palacio I, Celis A, Zobelli A, Gloter A, Kubsky S, Turmaud J-P, Conrad M, Berger C, de Heer W, Conrad E H,
Taleb-Ibrahimi A, Tejeda A Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer Nano
(((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((((
Lett., 17, 2681%2689 (2017)
21 Rappe, A. M.; Rabe, K. M.; Kaxiras, E.; Joannopoulos, J. D. Optimized Pseudopotentials. Phys. Rev. B: 41, 1227 (1990)
22 Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple. Phys. Rev. Lett. 77, 3865%3868.
(1996)
23 Grimme, S. Semiempirical GGA-type Density Functional Constructed with a Long-Range Dispersion Correction. J. Comput.
Chem. 27, 1787 (2006)
24 Billeter, S. R.; Curioni, A.; Andreoni, W. Efficient Linear Scaling Geometry Optimization and Transition-State Search for
Direct Wavefunction Optimization Schemes in Density Functional Theory Using a Plane-Wave Basis. Comput. Mater. Sci. 27,
437. (2003)
25 Monkhorst, H. J.; Pack, J. D. Special Point for Brillouin Zone Integration. Phys. Rev. B 13, 5188. (1976)
26 Giannozzi, P. QUANTUM ESPRESSO: a Modular and Open- Source Software Project for Quantum Simulations of Materials.
J. Phys.: Cond. Matt 21, 395502 (2009)
27 Sclauzero G., Pasquarello A Low-strain interface models for epitaxial graphene on SiC(0001) Diam & Rel Mat 23 178 -- 183.
(2012)
28 Bellucci L, Cavallucci T, Tozzini V From buffer layer to graphene on Silicon Carbide: a multi-scale simulation, in preparation
29 Cavallucci T, Kakhiani K, Farchioni R Tozzini V Morphing graphene-based systems for applications: perspectives from
simulations, GraphITA. Carbon Nanostructures., 87-111 (2017)
Intrinsic structural and electronic properties of the Buffer Layer
on Silicon Carbide unraveled by Density Functional Theory
Tommaso Cavallucci and Valentina Tozzini
NEST- Scuola Normale Superiore and Istituto Nanoscienze, Cnr, Piazza San Silvestro 12,
56127 Pisa, Italy
Supporting information
S.1. Distributions of bonds
As mentioned in the main text, the covalent bonds distribution can be evaluated in different ways (i) by
evaluation of the z coordinate (ii) by selecting the Si-C minimum distance for each C atom in the BL and
(iii) evaluating the charge density value in a point midway between each C atom in the BL and the nearest
Si atom (see Fig S.1 b). Fig S.1 (a) compares the methods (ii) and (iii) showing the distribution of Si-C
minimal distances and the values of charge density in the midway point. The two sets of distribution
(three for each method, for the three models) both display three separate populations, corresponding to the
bound atoms (small Si-C distance, high density), the unbound atoms (intermediate distance and density)
and crests atoms (large distance, small density). The populations selected with the two methods coincide
and are represented in colors in Fig S.2, (a-c).
Fig S.1 (a) Distributions of the minimum distances between C atoms of the BL and Si atoms of the substrate (top) and of the
charge density value evaluated in the middle points of the Si-C distance from a C of the buffer and the nearest Si (the latter
shown with inverted abscissa, to better compare with the fomer). (b) Total electronic charge density evaluated on a vertical plane
cutting some Si-C bonds (indicated) and on an horizontal plane located between the BL and the substrate.
The comparison of methods (ii)-(iii) and (i) is reported in Fig S.2, (d)-(e). It can be seen that the
population of bound and unbound atoms are not very well separable on the basis of the z coordinate,
because their tail superimpose. The bonds spatial distribution is visible also in Fig S.3 as they appear as
bright spots when the charge density is plotted on a plane between the BL and the substrate. In Fig S.3,
also visible (less bright) is the aromatic ! system of the "benzene" rings (corresponding to "unbound"
atoms in dark grey in Fig S.2). As explained in the text, the rings are separated by bound atoms.
Fig S.2 Space distribution of bound (yellow), unbound (dark grey) and crests atoms (light grey), in L (a), Sh (b) and St (c)
models, as selected with the method (ii). (d-f) report the height distribution of the three classes of atoms, colored as in (a-c).
(b)
(c)
(a)
Fig S.3 Charge density distribution plotted on a plane located between the BL and the substrate, as in Fig S.1 (b) (upper), for
the three models (a)=L, (b)=Sh, (c)=St.
S.2. Binding energy
An alternative to the formation energy Ef to evaluate the relative stability of the models is the binding
energy, e.g. the energy of the system evaluated with respect to the graphene sheet separated from the
substrate
!!!!!"#! !!"#!!!"
being Eopt, Esub and Egr the energy of the systems and of their substrate and graphene isolated components
respectively evaluated in the same cell. Eb accounts both for the chemical energy included in the covalent
bonds between the buffer and the substrate and of their structural readjustment due to binding. This
quantity (and its value per unit surface, per Si atom, per C atom and per bond is reported in Table S.1.
For S models the estimated dissociation energy of the buffer to the separated graphene is ~0.7eV (little
larger for Sh) per Si-C covalent bond, which is little less than what expected for an average value for a
covalent bond. Conversely the value for L model is considerably larger, indicating that the sheet is more
difficult to detach in the L model than in S. We remark, however, that this is just a very rough evaluation
of the binding energy, especially because the reference system is not the flat graphene, but a laterally
compressed graphene sheet. Therefore the reference systems in the two cases are different being the
lateral compression different.
Nb
Eb (eV)
L
83
-199.667
Sh -16.870
24
St
-16.577
25
Table S.1 Binding energies Eb of the three model systems as defined in the main text, and normalized to the to the number of
Si surface atoms, of C buffer atoms and to the number of Si-C bonds, also reported. The average surface density of the buffer
atoms, NC/S is also reported.
Eb/NSi (eV)
-1.849
-0.544
-0.535
NC/S (nm-2)
38.306
38.654
38.654
Eb/NC (eV)
-0.5907
-0.1721
-0.1692
NSi
108
31
31
NC
338
98
98
Nb /NC
24.6%
24.5%
25.5%
Eb/Nb (eV)
-2.406
-0.703
-0.663
|
1903.06645 | 1 | 1903 | 2019-03-15T16:32:42 | Engineering Effects of Vacuum Fluctuations on Two-dimensional Semiconductors | [
"cond-mat.mes-hall"
] | The resonance energy and the transition rate of atoms, molecules and solids were understood as their intrinsic properties in classical electromagnetism. With the development of quantum electrodynamics, it is realized that these quantities are linked to the coupling of the transition dipole and the quantum vacuum. Such effects can be greatly amplified in macroscopic many-body systems from virtual photon exchange between dipoles, but are often masked by inhomogeneity and pure dephasing, especially in solids. Here, we observe an exceptionally large renormalization of exciton resonance and radiative decay rate in transition metal dichalcogenides monolayers due to interactions with the vacuum in both absorption and emission spectroscopy. Tuning the vacuum energy density near the monolayer, we demonstrate control of cooperative Lamb shift, radiative decay, and valley polarization as well as control of the charged exciton emission. Our work establishes a simple and robust experimental system for vacuum engineering of cooperative matter-light interactions. | cond-mat.mes-hall | cond-mat | 1 Engineering Effects of Vacuum Fluctuations on Two-dimensional Semiconductors Authors: Jason Horng1*, Yu-Hsun Chou1,2 , Tsu-chi Chang2, Chu-Yuan Hsu2, Tien-chang Lu2, Hui Deng1* Affiliations: 1Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, United States. 2Department of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. *Correspondence to: dengh@umich.edu, jahorng@umich.edu Abstract: The resonance energy and the transition rate of atoms, molecules and solids were understood as their intrinsic properties in classical electromagnetism. With the development of quantum electrodynamics, it is realized that these quantities are linked to the coupling of the transition dipole and the quantum vacuum. Such effects can be greatly amplified in macroscopic many-body systems from virtual photon exchange between dipoles, but are often masked by inhomogeneity and pure dephasing, especially in solids. Here, we observe an exceptionally large renormalization of exciton resonance and radiative decay rate in transition metal dichalcogenides monolayers due to interactions with the vacuum in both absorption and emission spectroscopy. Tuning the vacuum energy density near the monolayer, we demonstrate control of cooperative Lamb shift, radiative decay, and valley polarization as well as control of the charged exciton emission. Our work establishes a simple and robust experimental system for vacuum engineering of cooperative matter-light interactions. 2 The Lamb shift of the atomic transition frequency arises from the emission and re-absorption of virtual photons by single atoms.(1) Its discovery ushered the development of quantum electrodynamics and led to the surprising realization that the vacuum is not empty. The quantum fluctuations in vacuum couples with the transition dipole of matter and modifies its resonance energy and transition rate(1 -- 8). The effects of the vacuum coupling become enhanced collectively in certain many-body systems by coherent exchange of virtual photons among the dipoles, leading to, for example, the cooperative Lamb shift(5, 9, 10) and superradiance(6, 10 -- 12). However, strong dephasing and inhomogeneity in many-body systems have rendered these effects extremely difficult to observe experimentally. The cooperative Lamb shift in the optical domain has only been reported in a few experiments with cold atoms or ions(9, 13 -- 17). In solids, it has only been observed in nuclei excited by synchrotron x-rays and in superconducting microwave circuits(18, 19). Recently, high reflectivity was measured from a mere single layer of transition metal dichalcogenides crystal(TMDC)(20, 21), owing to the large exciton-photon coupling strength, near radiative-limited linewidth and two-dimensional(2D) translational symmetry. Based on this, theoretical work suggests monolayer TMDCs may provide an easy-to-access 2D many-body system for observing and utilizing the effects of vacuum fluctuations(22, 23). In this work, using a mirror to control the dipole transition of excitons in a high-quality, monolayer TMDC, we demonstrate the cooperative Lamb shift of the excitons accompanied by modified exciton radiative decay rate. This observation suggests that the TMDC monolayer can be used as a sensitive probe of the vacuum modes(7, 24, 25). We also demonstrate control of the charged exciton and valley polarization in the TMDCs with the tunable vacuum environment. In contrast to the strong coupling and Purcell effect, where a cavity is used to modify the resonances, in this work we have a fully open system coupled to a continuous spectrum of modes. Figure 1A shows a schematic of our system. A monolayer TMDC is placed at a distance L from a mirror made of a distributed Bragg reflector(DBR) (Fig. 1A). The mirror imposes a boundary condition on the electromagnetic field in the space, creating a standing-wave pattern E(r) = 2E0sin(kr)with an electric field node at the mirror plane. Here E0 and k are the electric field amplitude and the wavenumber of the incident planewave, and r is the distance from the mirror. This mode structure applies to not only classical fields but also the vacuum fluctuations. The structure of the vacuum fluctuations can be measured through its effect on a dipole emitter, such as an exciton in solids. Given a transition dipole, the radiative decay of the excited state to the ground state is proportional to the strength (spectral density) of electromagnetic fluctuations near the resonance frequency ω that are present in the environment. Therefore, measuring the lifetime of the excitation probes the local strength of vacuum fluctuations at the transition frequency. In effect, the monolayer can act as a local vacuum field analyzer. The effects of vacuum fluctuations on the exciton resonance in a 2D material can be modeled by the following Hamiltonian in the rotating wave approximation: H= ℏω0b†b+∫dkℏωkak†ak−ig∫dksin(kL)(akb†+ak†b) (1) where b†,ak†, b, ak are creation and annihilation operators for an exciton and a photon, respectively, ℏω0, ℏωk are the corresponding energies of the exciton and the photon, g is the 3 dipole coupling constant between the exciton and photon field, L is the distance between the monolayer and the mirror. The factor sin(kL) represents the spatial mode structure of the electric field in front of a mirror. With the time-dependent Schrodinger equation, we solve for the exciton wavefunction X(t)and obtain the exciton resonance energy and radiative decay rate. As shown in the supplementary, the solution for 𝐿≪2𝜋𝑐/𝛾(𝛾 is the radiative decay rate for a free-standing monolayer) can be written as: X(t)=X(0)exp [−iE0t/ℏ]exp [−γ2t] (2) where E0=E0−ℏγ2sin(2kL) (3a) γ=2γcos2(kL) (3b) The physical meaning of E0 and γis the renormalized exciton energy and exciton radiative rate, respectively, modified by the vacuum field. The renormalized exciton radiative rate γ equals 2γ a at the anti-node(kL = (n+0.5)π) and zero at the node(kL = nπ) of the electric field. This is due to modification of exciton-photon coupling through local electric field. At the anti-node, the local field 2E0 enhances both the absorption and the emission rate, similar to the Purcell effect in a cavity configuration. At the node, local electric field is suppressed, therefore radiative decay of the exciton excitation is suppressed. The renormalized exciton energy E0 is shifted from 𝐸0 due to coupling with the vacuum field. This energy shift in a collective excitation system has been named as "cooperative Lamb shift". It shares the same origin as the Lamb shift but can be as large as the radiative linewidth ℏγ, due to the cooperative enhancement. In a radiative-limited sample, the renormalization on the resonance energy and the radiative decay rate can be directly observed through spectra of the exciton in frequency domain. An alternative approach is to treat the renormalization as the result of interaction between the monolayer dipole moment, induced by vacuum fluctuations, and its image dipole(Fig. 1B). In our case, the image dipole has a π phase difference compared with the original dipole due to the boundary condition set by the mirror. The renormalization of the radiative decay rate can be understood as follows: when the two dipole sheets are separate by nλ(the node condition), the radiated fields generated by them destructively interfere, leading to suppression in emission and apolariton of infinite lifetime(23). When their distance is (n+0.5)λ(the anti-node condition), the radiated fields constructively interfere leading to enhanced emission rate and short exciton lifetime. The cooperative Lamb shift can be understood through the dipole-dipole interaction: the emitted field from the image dipole at the original dipole has a phase shift of exp(i(π/2+2kL)), where the π/2 comes from the phase relation between dipole and its radiation and 2kL is the phase accumulation during the propagation. Due to the dipole interaction H=-μ·E, the energy is lower if L=[n/2, (n/2+0.25)]λ and the energy is higher if L=[(n/2+0.25), (n/2+0.5)]λ leading the shift of exciton energy. Observation of the cooperative Lamb shift and corresponding modulation of the radiative decay rate requires a homogeneous ensemble of emitters with nearly radiative-limited line 4 broadening, which is challenging to realize in conventional semiconductors. In this work, using a monolayer TMDC, we observe the renormalization of both exciton energy E0 and linewidth broadening ℏγ due to coupling with a radiation vacuum. To measure the renormalization of the exciton mode, we change the distance L between the monolayer and the mirror to modulate the local vacuum fluctuation at the 2D exciton position. We place an hBN-encapsulated MoSe2 monolayer on a sapphire substrate in front of DBR mirror, whose position is controlled by a piezo-electric stage as illustrated in Fig. 1A. This setup allows in situ spectroscopy measurement of the same piece of MoSe2 while we tune the local vacuum field. First, we measure the reflection contrast spectra of the monolayer as it is moved through the standing wave of the electric field profile, using a weak femtosecond laser with bandwidth covering the exciton absorption peak. As shown in Figure2A, the absorption dip of the MoSe2A-exciton at1660meV is strongly modulated, following the period of the standing wave profile. Figure 2B shows several reflection contrast spectra (horizontal linecuts of Fig. 2A). The absorption dips are fit very well by Lorentzian functions(gray dashed curves), indicating minimal inhomogeneous broadening in the sample. The absorption depth is tuned from as low as 4% to as high as 99% at node and anti-node positions of the field, respectively. In the node region, we can hide the monolayer from the classical probe field even though it sits fully exposed in an open space. In the anti-node region, we can enhance the absorption to achieve the critical coupling condition where all photon energy is dumped into exciton energy, giving nearly 100% absorption. We summarize in Fig. 2C the modulation of the absorption depth, linewidth and the resonance energy of the exciton as a function of mirror distance. We use the absorption depth to determine whether the monolayer is located at a node or anti-node(vertical gray dashed lines in Fig. 2C indicates the anti-nodal positions).In excellent agreement with predictions by Eq. (3), both the linewidth and energy of the exciton resonance show periodic modulations with a 𝜋/2 phase shift relative to each other and a modulation amplitude different by about a factor of 2. The linewidth of the exciton changes by 2 meV, from 5.5meV at an anti-node to 3.5meV at a node (middle panel), corresponding to twice the non-renormalized radiative linewidth ℏγ. Fitting the linewidth modulation with Eq. (3a)after including a constant offset𝛾′(blue dashed curve), we obtain ℏ𝛾=1.15±0.11 𝑚𝑒𝑉 and ℏ𝛾′=3.51±0.16𝑚𝑒𝑉. The offset of ℏ𝛾′accounts for contributions from other broadening mechanisms, including inhomogeneous, non-radiative and pure dephasing broadening. Theℏγ agrees with the radiative linewidth measured from linear reflection(20, 21) and 2D spectroscopy(26, 27). Similar linewidth modulations due to modified dipole-vacuum coupling has been observed in atomic systems(13, 14) and superconducting qubits(7, 19) in absorption spectra, but has not been demonstrated in a solid state system due to the small radiative linewidth compared with the total linewidth in typical semiconductor materials. Cooperative Lamb shift of the exciton resonance due to exciton-vacuum coupling (lower panel of Fig. 2C) follows the same period of the linewidth modulation but 𝜋/2displaced in phase. The shift is zero at both the nodes and anti-nodes of the field, as predicted by Eq. (3b). Fitting the modulation of the exciton energy with Eq. (3b), we obtain the magnitude of the modulation ℏ𝛾=1.14±0.18𝑚𝑒𝑉, consistent with the result from the linewidth modulation. 5 Such cooperative Lamb shift has been predicted theoretically(5), but demonstrated only in atomic and superconducting qubit systems recently(9,13,18,19).Note that the observed linewidth and cooperative Lamb shift modification is on the order of 1meV(~250THz), which is much larger compared with atomic and superconducting qubits systems(tens of MHz or smaller),because of the extraordinary oscillator strength of the collectively coupled excitons. Compared to absorption, incoherent photoluminescence (PL)stems from the coupling of incoherent exciton polarization to vacuum fluctuations, which cannot be described semi-classically. It is, therefore, interesting to test if the same renormalization effect appears in the emission spectrum of the exciton. Figure 3A shows a few examples of the PL spectra with varying L under the excitation of a continuous wave laser at 532nm. The features at 1662meV and 1632meV are due to exciton and trion emission, respectively. The linewidth of exciton emission measured at anti-nodes is clearly narrower than that measured at nodes(figure 3B), indicating that the same radiative decay rate renormalization is present in PL spectra. We summarize in Fig 3Cmodulation of the PL intensity, linewidth and resonance energy of the exciton peak. Reflection spectra are taken together to identify the node positions for exciton wavelength(750nm), which are labeled as vertical gray dashed lines in figure 3C. The PL intensity is complicated by the factor that the absorption of the 532nm pump laser is also modulated by the monolayer-mirror distance L. As a result, we observe PL intensity minima when the monolayer is located at the nodes of the field of either 532nm or 750nm, indicated by green arrows and gray dashed lines, respectively. The suppression of PL at the nodes of 750nm light arises from the optical interaction between the monolayer and its image dipole. To estimate the suppression/enhancement effect, we take the ratio of PL intensity at a node(step 16) versus an anti-node(step27) and compare the ratio to when no mirror is present. (Both points are around anti-node of the 532nm light.)In our measurements, the ratio can be as low as 5% and as high as 175%, showing control of PL quantum efficiency through radiative decay rate modulation. The renormalization effect on the exciton decay rate can be observe in the frequency domain more directly. The third panel in figure 3B show the PL linewidth as a function of monolayer-mirror distance. The PL linewidth follows only the mode profile of the 750nm standing wave and not that of the 532nm excitation laser. It changes from about 4.5meV at the anti-nodes to about 2.2meV at the nodes. Correspondingly, a cooperative Lamb shift of 1.1meV is measured in PL(lower panel of Fig. 3B). Both results are in agreement with absorption measurements. Therefore we demonstrate the same exciton renormalization due to vacuum field in the emission domain, which is difficult to observe in atomic and superconducting qubit systems. The dramatic effects of the vacuum on the TMDC excitons observed above demonstrate the possibility to control optical properties of TMDCs by vacuum engineering. We give two other examples, where we use the same tunable mirror approach to tune the charged exciton and valley polarization via the vacuum-matter coupling. Charged exciton, or trions, are pronounced in TMDCs due to the strong Coulomb interaction in a two-dimensional film. Since the exciton and trion wavelengths are well separated, we can selectively enhance either the exciton or the trion emission by tuning the vacuum field strength at the respective wavelength. Figure 4Ashows two PL spectra from the 6 same MoSe2 monolayer, but at different mirror locations. The emission spectra show very different exciton/trion intensity ratio despite measured from the same position on the monolayer and at a fixed charge doping. This result shows that the ability to shape the vacuum-matter coupling allows us to control the interference effect for both exciton and trion emission. We show in Figure 4B the mirror-monolayer distance dependence of the PL intensities of exciton, trion and their ratio. The suppression of exciton emission is observed at the node for 750nm light indicated by the dashed gray lines while the suppression of trion emission is observed at the node for 780nm light indicated by the orange arrows. The ratio of exciton and trion emission intensity changes over two orders of magnitude, from 0.02 to 2.48. This simple technique can be utilized to various 2D materials applications to enhance or suppress the transition of interest. Another important property of TMDC materials is the valley degree of freedom. However, the valley polarization of the excitons is often complicated by several competing decay and exchange mechanisms. Considering the two dominant mechanisms -- the radiative decay and inter-valley exchange interaction -- we can formulate the valley polarization, quantified by the degree of circular polarization (DOCP) as DOCP=I+−I−I++I−=γγ+2η (4) where γ and η are the radiative decay rate and intervalley exchange rate, respectively(28). For this study, we use an encapsulated WSe2 sample and 633nm laser with σ+ polarization for excitation. The exciton PL spectra around 1.74eV with anti-node, node and no mirror condition are shown in Fig. 4C. The measured DOCP of exciton as a function of mirror distance(Fig. 4D) shows oscillation behavior in accord with the reflection contrast modulation. The tuning of vacuum fluctuation through mirror distance allows us to change the radiative decay rate γ of the WSe2 exciton, resulting in enhancement (suppression) of DOCP at anti-nodes (nodes). Given that the measured DOCP without mirror present is 37%(blue dashed line in Fig. 4D), the modulation should be from 0% to 54% based on Eq. (4) when the radiative decay rate is tuned from 0 to 2γ. However, we observe a modulation from 25% to 43% experimentally. The discrepancy might come from other depolarization mechanisms or effective radiative lifetime from dark excitons in the WSe2 monolayer and require further studies. Nonetheless, the modulation via simply a mirror is already comparable with other reports using microcavities(28 -- 30). In conclusion, we observe the renormalization of exciton resonance energy and radiative linewidth in TMDC monolayers due to coupling to vacuum fields. This effect has only been observed in atomic and superconducting qubit systems before. The tightly bound exciton in TMDC monolayers leads to an exceptionally large radiative linewidth, enabling pronounced effects of vacuum engineering, manifested as a large cooperative Lamb shift, strong modulation of the radiative linewidth, and control over trion and valley degrees of freedom. Our study shows intriguing collective physics of vacuum effects on excitonic many-body systems and could pave the way for future quantum optics research with 2D materials. Note: Upon the completion of this manuscript, we became aware of preprints of related works by You Zhou, et. al.(31) and Christopher Rogers, et. al.(32). 7 References and Notes: 1. W. E. Lamb, R. C. Retherford, Fine Structure of the Hydrogen Atom by a Microwave Method. Phys. Rev. 72, 241 -- 243 (1947). 2. Dirac Paul Adrien Maurice, Bohr Niels Henrik David, The quantum theory of the emission and absorption of radiation. Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character. 114, 243 -- 265 (1927). 3. T. Fujisawa et al., Spontaneous Emission Spectrum in Double Quantum Dot Devices. Science. 282, 932 (1998). 4. J. Eschner, C. Raab, F. Schmidt-Kaler, R. Blatt, Light interference from single atoms and their mirror images. Nature. 413, 495 (2001). 5. R. Friedberg, S. R. Hartmann, J. T. Manassah, Frequency shifts in emission and absorption by resonant systems ot two-level atoms. Physics Reports. 7, 101 -- 179 (1973). 6. F. \mboxç\else ç\fiois Dubin et al., Photon Correlation versus Interference of Single-Atom Fluorescence in a Half-Cavity. Phys. Rev. Lett. 98, 183003 (2007). 7. I.-C. Hoi et al., Probing the quantum vacuum with an artificial atom in front of a mirror. Nature Physics. 11, 1045 (2015). 8. Kazuki Koshino and Yasunobu Nakamura, Control of the radiative level shift and linewidth of a superconducting artificial atom through a variable boundary condition. New Journal of Physics. 14, 043005 (2012). 9. J. Keaveney et al., Cooperative Lamb Shift in an Atomic Vapor Layer of Nanometer Thickness. Phys. Rev. Lett. 108, 173601 (2012). 10. U. Dorner, P. Zoller, Laser-driven atoms in half-cavities. Phys. Rev. A. 66, 023816 (2002). 11. M. Gross, S. Haroche, Superradiance: An essay on the theory of collective spontaneous emission. Physics Reports. 93, 301 -- 396 (1982). 12. R. J. Bettles, S. A. Gardiner, C. S. Adams, Enhanced Optical Cross Section via Collective Coupling of Atomic Dipoles in a 2D Array. Phys. Rev. Lett. 116, 103602 (2016). 13. L. Corman et al., Transmission of near-resonant light through a dense slab of cold atoms. Phys. Rev. A. 96, 053629 (2017). 14. J. Javanainen, J. Ruostekoski, Y. Li, S.-M. Yoo, Shifts of a Resonance Line in a Dense Atomic Sample. Phys. Rev. Lett. 112, 113603 (2014). 15. E. Shahmoon, D. S. Wild, M. D. Lukin, S. F. Yelin, Cooperative Resonances in Light Scattering from Two-Dimensional Atomic Arrays. Phys. Rev. Lett. 118, 113601 (2017). 8 16. Z. Meir, O. Schwartz, E. Shahmoon, D. Oron, R. Ozeri, Cooperative Lamb Shift in a Mesoscopic Atomic Array. Phys. Rev. Lett. 113, 193002 (2014). 17. T. Peyrot et al., Collective Lamb Shift of a Nanoscale Atomic Vapor Layer within a Sapphire Cavity. Phys. Rev. Lett. 120, 243401 (2018). 18. R. Röhlsberger, K. Schlage, B. Sahoo, S. Couet, R. Rüffer, Collective Lamb Shift in Single-Photon Superradiance. Science. 328, 1248 (2010). 19. A. F. van Loo et al., Photon-Mediated Interactions Between Distant Artificial Atoms. Science. 342, 1494 (2013). 20. P. Back, S. Zeytinoglu, A. Ijaz, M. Kroner, A. Imamoıfmmode \breveg\else ğ\filu, Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using Monolayer $\mathrmMoSe_2$. Phys. Rev. Lett. 120, 037401 (2018). 21. G. Scuri et al., Large Excitonic Reflectivity of Monolayer $\mathrmMoSe_2$ Encapsulated in Hexagonal Boron Nitride. Phys. Rev. Lett. 120, 037402 (2018). 22. S. Zeytinoıfmmode \checkg\else ǧ\filu, C. Roth, S. Huber, A. ıfmmode \dotI\else \.I\fimamoıfmmode \breveg\else ğ\filu, Atomically thin semiconductors as nonlinear mirrors. Phys. Rev. A. 96, 031801 (2017). 23. D. S. Wild, E. Shahmoon, S. F. Yelin, M. D. Lukin, Quantum Nonlinear Optics in Atomically Thin Materials. Phys. Rev. Lett. 121, 123606 (2018). 24. C. Riek et al., Direct sampling of electric-field vacuum fluctuations. Science. 350, 420 (2015). 25. J. Kim, D. Yang, S. Oh, K. An, Coherent single-atom superradiance. Science. 359, 662 (2018). 26. T. Jakubczyk et al., Radiatively Limited Dephasing and Exciton Dynamics in MoSe2 Monolayers Revealed with Four-Wave Mixing Microscopy. Nano Lett. 16, 5333 -- 5339 (2016). 27. G. Moody et al., Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides. Nature Communications. 6, 8315 (2015). 28. Y.-J. Chen, J. D. Cain, T. K. Stanev, V. P. Dravid, N. P. Stern, Valley-polarized exciton -- polaritons in a monolayer semiconductor. Nature Photonics. 11, 431 (2017). 29. S. Dufferwiel et al., Valley-addressable polaritons in atomically thin semiconductors. Nature Photonics. 11, 497 (2017). 30. S. Dufferwiel et al., Valley coherent exciton-polaritons in a monolayer semiconductor. Nature Communications. 9, 4797 (2018). 9 31. You Zhou et al., Controlling excitons in an atomically thin membrane with a mirror. arXiv:1901.08500 (2019). 32. Christopher Rogers et al., Coherent Control of Two-Dimensional Excitons. arXiv:1902.05036 (2019). Acknowledgments: We gratefully thank Professor Mack Kira for fruitful discussions. Funding: This work was supported by the Multidisciplinary University Research Initiative(MURI) program by the Army Research Office(ARO) under Grant # W911NF-17-1-0312. Y.-H. C. acknowledges the support from Graduate Student Study Abroad Program(GSSAP) from Ministry of Science and Technology in Taiwan. This work was partially supported by the Minister of Science and Technology (Taiwan) under contracts Nos. 106-2917-I-564-021. Author contributions: J.H. and H.D. conceived the research. J.H. designed the experiments, carried out optical measurements, analyzed the data and performed theoretical analysis. T.-C. C., C.-Y. H. and T.-C. L. fabricated DBR mirrors. Y.-H. C. fabricated the TMDC samples assisted by J.H.. J.H. and H.D. wrote the manuscript with inputs from all authors. Competing interests: Authors declare no competing interests. Data and materials availability: All data is available in the main text or the supplementary materials. 10 Figures Fig. 1. Modifying vacuum fluctuations at a two-dimensional semiconductor in front of a mirror. (A) A monolayer MoSe2 is placed in front of a mirror with a tunable distance L. Depending on the mirror distance L, the monolayer samples different vacuum fluctuation due to the standing wave imposed by the mirror boundary condition. Altering the vacuum-monolayer coupling leads to renormalization of exciton resonance energy and radiative decay rate. (B) Another approach to understand the system is to consider the exciton in the MoSe2 monolayer interacting with its mirror image through dipole-dipole interactions. Due to the macroscopic dipole moment from two-dimensional excitons, the renormalization effect can be significant. 11 Fig. 2. Effects of vacuum fluctuations on the exciton transition measured via absorption spectroscopy. (A) Measured reflection contrast of a MoSe2 monolayer in front of a distributed-Bragg-reflector as a function of photon energy and monolayer-mirror distance L. The absorption dip around 1660meV corresponds to the A-exciton resonance. (B) Several spectra from (A) showing the shift and broadening of the exciton absorption when the monolayer is moved from anode (step 7) to an anti-node(step 17) of the field. (C) Mirror-position dependence of the depth (top panel), linewidth (middle panel) and resonance energy (bottom panel) of the A-exciton absorption dip. The anti-node positions are identified by the maximum absorption depth (~99%), while the node positions are identified by the minimum absorption depth (~0.04%) and marked by the dashed lines. The modulation of the vacuum fluctuations lead to modulations of both the linewidth and the cooperative Lamb shift, which are fit but sinusoidal functions with a 𝜋/2 relative phase shift (blue and red dashed curves, respectively). 12 Fig. 3. Effects of vacuum fluctuations on the photoluminescence(PL) properties of a MoSe2 monolayer. (A) Measured PL spectra of a MoSe2 monolayer in front of a mirror as the monolayer is moved from an anti-node (black line) to a node (blue line) of the modified vacuum field. The emission peaks around 1660 and 1630 meV correspond to the A-exciton and trion resonances, respectively. (B) Normalized PL spectra at an anti-node and a node, showing different linewidths. (C) Mirror-position dependence of the intensity, linewidth and resonance energy of the A-exciton PL, showing modulations following the modified vacuum fluctuations. The PL resonance energy also shows the cooperative Lamb shift. The vertical dashed lines mark the nodes of the vacuum field identified from absorption spectra. The green arrows indicate where the absorption of the 532 nm excitation laser is suppressed. 13 Fig. 4. Controlling the emission properties of 2D materials via vacuum fluctuations. (A) Two MoSe2 emission spectra measured at the same position on the monolayer with a fixed doping. (B)The exciton and trion emission intensities (top) and their ratio (bottom) as a function of the monolayer-mirror distance, showing enhancement and suppression of the exciton relative to the trion emission with varying distances. (C) Helicity-resolved PL spectra of monolayer WSe2 at the field anti-node (left) and node (right) in front of a mirror, and without a mirror (middle). (D) Degree of circular polarization(DOCP) vs. the mirror position. It changes from 25% to 40%, showing the effect of vacuum coupling on the valley dynamics of TMDCs. The blue dashed line indicate the DOCP when mirror is no present. |
1511.05247 | 1 | 1511 | 2015-11-17T01:44:04 | Do micromagnets expose spin qubits to charge and Johnson noise? | [
"cond-mat.mes-hall"
] | An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace with background charge fluctuations causing dephasing of spin qubits. In addition, a micromagnet generates magnetic field evanescent-wave Johnson noise. We derive an effective Hamiltonian for the combined effect of a slanting magnetic field and charge noise on a single-spin qubit and estimate the free induction decay dephasing times T2* for Si and GaAs. The effect of the micromagnet on Si qubits is comparable in size to that of spin-orbit coupling at an applied field of B=1T, whilst dephasing in GaAs is expected to be dominated by spin-orbit coupling. Tailoring the magnetic field gradient can efficiently reduce T2* in Si. In contrast, the Johnson noise generated by a micromagnet will only be important for highly coherent spin qubits. | cond-mat.mes-hall | cond-mat | a
Do micromagnets expose spin qubits to charge and Johnson noise?
Allen Kha,1 Robert Joynt,2, 1 and Dimitrie Culcer1
1)School of Physics, The University of New South Wales, Sydney NSW 2052,
Australia
2)Department of Physics, University of Wisconsin, Madison, Wisconsin 53706,
USA
(Dated: 20 January 2020)
An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an
inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace
with background charge fluctuations causing dephasing of spin qubits. In addition, a micromagnet generates
magnetic field evanescent-wave Johnson noise. We derive an effective Hamiltonian for the combined effect
of a slanting magnetic field and charge noise on a single-spin qubit and estimate the free induction decay
dephasing times T ∗
2 for Si and GaAs. The effect of the micromagnet on Si qubits is comparable in size to that
of spin-orbit coupling at an applied field of B = 1T, whilst dephasing in GaAs is expected to be dominated
by spin-orbit coupling. Tailoring the magnetic field gradient can efficiently reduce T ∗
2 in Si. In contrast, the
Johnson noise generated by a micromagnet will only be important for highly coherent spin qubits.
Solid state spin systems,
in which coherence times
of up to a few seconds have been measured,1 -- 3 are
promising candidates for scalable quantum computer
architectures,4,5with silicon ideal for hosting spin-based
qubits.6 -- 11 Addressing individual qubits is vital, yet us-
ing electron spin resonance requires bulky on-chip coils
that dissipate heat close to the electron.12,13 However,
electric fields can be generated locally with small, low
voltage electrodes, and electrical spin rotations14,15 can
be accomplished by the modulation of a quantum dot
electric field in a slanting static magnetic field.15 -- 18
Quantum dot spin qubits are typically located near
semiconductor interfaces where defects are present.19 -- 23
The resulting fluctuations in the local electric field are a
well known source of dephasing in charge qubits,24 -- 29 as
well as relaxation30 and dephasing of spin qubits31 when
spin-orbit coupling is present. Here we show that the
micromagnet couples spin qubits to charge fluctuations
and causes dephasing even when spin-orbit coupling is
absent. In addition, a ferromagnet contains currents and
spins that fluctuate due to both thermal and quantum
effects. This generates random magnetic fields nearby.
Thus a micromagnet in the vicinity of spin qubits can
cause spin dephasing and relaxation. This effect is sim-
ilar to the relaxation caused by evanescent-wave John-
son noise32 recently observed in NV centers in diamond
close to metallic surfaces.33 In the case of a micromag-
net, however, we must consider the dissipative magnetic,
not electrical, response of the noise source. An analysis
of this kind has recently been done in Ref. 34 for one
type of micromagnet design. Although we treat here a
different design, our analytical results are in qualitative
agreement with the numerical results of Ref. 34.
In this paper we study two effects: qubit dephasing
in the presence of (A) the combined effects of charge
noise and an inhomogeneous magnetic field, and (B)
Johnson-type magnetic field noise generated by a micro-
magnet. We model the first effect as random telegraph
noise (RTN) and 1/f noise35 -- 40 together with an inhomo-
geneous magnetic field. We compare dephasing times T ∗
2
for identical dot designs in Si and GaAs. For the second
effect we derive the appropriate formulas that govern the
strength of the fluctuating magnetic fields in the vicinity
of the micromagnet and their effect on the qubit. For the
parameters appropriate to a representative device archi-
tecture this effect is not large. It will be important as
coherence times approach the range of 1 − 10 s.
Charge noise combined with an inhomogeneous mag-
netic field. We focus on a single-spin qubit implemented
in a symmetric gate defined quantum dot, located at the
flat interface of a semiconductor heterostructure (Si/SiGe
or GaAs/AlGaAs). The two-dimensional electron gas
(2DEG) lies in the xy-plane. The gate confinement is
assumed harmonic V (x, y) = 1
2 m∗ω2(x2 + y2), where m∗
is the in-plane effective mass, ω =
m∗a2 the oscillator
frequency and a the dot radius. The Hamiltonian for the
electron kinetic energy and confinement in the xy-plane
H0 = −
2
2m∗(cid:18) ∂2
∂x2 +
∂2
∂y2(cid:19) +
2
2m∗a4 (x2 + y2).
(1)
For the ground state D0(x, y) = (1/a√π) e− x2+y2
energy ε0 = 2
cited state D±(x, y) = (1/a2√π) (x ± iy)e− x2+y2
2a2 with
2m∗a2 . For the twofold degenerate first ex-
and
ε1 = 3ε0. We initially model charge noise by a single
charge trap located in the xy-plane at a distance x = xd
from the dot center. The noise Hamiltonian HN (t) is
a random function of time and represents a fluctuat-
ing Coulomb interaction between the electron in the dot
In the absence of screening the time-
and one at xd.
,
independent Coulomb potential VC (x, y) =
4πε0εrrd
where ε0 is the permittivity of free space, εr the dielectric
2a2
e2
constant and rd =p(x − xd)2 + y2 the distance between
the defect and the dot center. The non-zero matrix ele-
ments in HN are v0 = hD0VCD0i, v1 = hD±VCD±i,
α = hD0VCD±i and β = hD±VCD∓i. Electrons in
the 2DEG screen the defect potential.41 We use the same
notation to denote the matrix elements v0, v1, α, β but
replace VC → Uscr = R d2q/(2π)2e−iq·rUscr(q), where
M
z
B0
Sx
bsl
Substrate
Semiconductor
x
FIG. 1. Sketch of the implementation of two ferromagnetic
strips with uniform magnetisation M due to the external mag-
netic field B0 in the x -direction. The resulting out-of-plane
z-component of the field from the strips has a slanting form
with gradient bsl. The spin of the electron is initialised k x.
Uscr(q) is the Fourier transform of the potential42 and
we neglect contributions from momenta q ≥ 2kF .
lable homogeneous part B0 and a slanting field,15 -- 17
We take a total magnetic field composed of a control-
B = (B0 + bslz)x + (bslx)z,
(2)
where the magnetic field gradient takes the value15,16
bsl = 0.8 Tµm−1. The magnetic field gradient is cre-
ated by two ferromagnetic strips integrated on top of the
QD, magnetized uniformly by the in-plane magnetic field
B0. This structure results in a stray magnetic field with
an out-of-plane component that varies linearly with po-
sition with a gradient bsl as shown in Figure 1. The
Zeeman Hamiltonian HZ = 1
2 gµB σ · B, where σ is the
vector of Pauli spin matrices. We have six basis states
{D0,↑, D0,↓, D+,↑, D+,↓, D−,↑, D−,↓}, with ↑i, ↓i the
σx eigenstates corresponding to eigenvalues 1, −1 respec-
tively. The qubit subspace is {D0,↑, D0,↓}.
The total Hamiltonian H = H0 + HN + HZ is given
in the Supplement.41 The magnetic field couples the
qubit subspace to spin anti-aligned orbital excited states
through the gradient bsl. We project H onto the qubit
subspace by eliminating orbital excited states.43 The re-
sulting effective spin Hamiltonian Hef f = HQbt + 1
σ ·
2
V(t) expresses the perturbations of noise and the mag-
netic field as an effective fluctuating magnetic field in the
qubit subspace (for which we use σ)
Hef f =(cid:18)ε+
0
0
0 ε−
0(cid:19) +
8η2δvεZ
(δε)3 σz −
4αηδv
(δε)2 σx
(3)
2 gµBhD0bslxD+i = 1
where η = 1
2 gµBhD−bslxD0i,
δε = ε0 − ε1, δv(t) = v0(t) − v1(t) and εZ =
hD0,↑HZD0,↑i. The first term corresponds to a pseu-
dospin 1/2 in an effective magnetic field assumed to be
controllable, while the second arises from noise. The term
∝ σx is behind spin relaxation30 and Rabi oscillations,44
but its contribution to dephasing is very small as long as
2
it is much smaller than δε, which is true for this work.
Dephasing here arises from the σz term.
In Si particular attention must be paid to the val-
ley splitting, which is the magnitude of the valley-orbit
coupling ∆v.45 In this work we focus on the case δε >
∆v ≫ εZ, though we also expect our results to hold when
∆v ≪ εZ ≪ δε (the critical condition is δε > ∆v). The
inhomogeneous magnetic field will give a small matrix
element coupling states from different valleys. For an in-
teraction to couple valley states significantly, it must be
sharp in real space31. The z-dependence of the magnetic
field is not sharp enough to couple valleys, and the ma-
trix element is further diminished by the small value of
the Bohr magneton. The small intervalley matrix ele-
ments only matter when ∆v ≈ εZ , otherwise εZ does not
In this case it is known that
affect the valley physics.
a relaxation hotspot (a peak in T1) exists,46 which sug-
gests that T1 limits T ∗
2 , and the valley degree of freedom
must be taken into account explicitly, yet by adjusting
the magnetic field one can tune away from this point.
The formal treatment of dephasing is summarised in
the Supplement.41 We divide the noise spectrum into two
parts: (i) random telegraph fluctuators which are close
to the qubit and whose effect may be resolved individu-
ally in a noise measurement and (ii) a background 1/f
spectrum. We first focus on a single nearby source of
RTN. To facilitate comparison with the spin-orbit cou-
pling case, we consider fluctuators with shorter switching
times than a cut-off of τ = 1 µs. In this case V 2 ≪ (
τ )2
and the initial spin decays as ∝ e−t/T ∗
V 2τ
22 ,
2 , with
(4)
=
2 (cid:19)RT N
(cid:18) 1
T ∗
where for the slanting magnetic field V = 8η2δv(t)εZ
the background 1/f noise we find41
δε3
. For
2 (cid:19)1/f ≈r γN kBT
(cid:18) 1
22 (cid:18) 8η2εZ
δε3 (cid:19) ,
T ∗
(5)
where γN (units of energy) is derived from experiment.
We consider sample QDs in Si/SiGe and GaAs struc-
tures and set the fluctuator switching time τ = 1 µs,
defect position xd = 40 nm, Fermi wave vector kF =
108 m−1 and Zeeman energy εZ = 60 µeV. This does not
affect η as it is ∝ bsl and not ∝ B0.47 We first cal-
culate T ∗
2 for a fixed quantum dot confinement energy
δε = 0.5meV in the two materials, and then for fixed dot
radius a = 20 nm. For Si g = 2, m∗ = 0.2me and εr =
12.5 (Si/SiGe),48,49 for GaAs g = 0.41, m∗ = 0.067me
and εr = 12.9 (GaAs/AlGaAs),50 where me is the bare
electron mass. For 1/f noise we assume S(ω) scales lin-
early with temperature51,52 so we extract the factor ∆ =
γN kBT , representing the strength of the noise from Refs.
53 and 28 for Si/SiGe and GaAs respectively and scale it
to T = 100 mK, which gives ∆Si/SiGe = 8.85× 10−7 meV2
and ∆GaAs = 3.79 × 10−3 meV2.
The results are presented in Tables I and II, which are
the main results of this paper, and since Eqs. S5 and
S7 only give estimates for T ∗
2 we plot the time evolution
of the spin Sx(t) in Figures 2 and 3. We also compare
dephasing times with those due to spin-orbit coupling as
calculated in Ref. 31. In Si/SiGe the dephasing times
for spin-orbit and the slanting magnetic field are essen-
tially the same, while in GaAs spin-orbit has a far more
destructive effect on qubit coherence compared to the
magnetic field. Although the numbers in Ref. 31 are
estimates, the noise profile assumed was the same as in
this work. The much weaker effect on GaAs is due to
the smaller g-factor. The Overhauser field in GaAs QDs
is several orders of magnitude larger than in Si QDs,54
and relevant energy scales have the same order of magni-
tude as for spin-orbit interactions,31 so without consider-
ing feedback mechanisms55 or echo sequences56 designed
to increase dephasing times, the contribution from the
Overhauser field is the same as due to spin-orbit. The
contribution of the nuclear spin bath to qubit decoher-
ence for a Si QD can be drastically reduced by using
isotopically purified 28Si samples.54,57
We also find that T ∗
2 is heavily dependent on the
2 )1/f ∝ δε4 and
QD radius and confinement energy. (T ∗
2 )RT N ∝ δε6, so by doubling the confinement energy,
(T ∗
or equivalently reducing the dot radius by a factor of √2,
the dephasing time can be increased by an order of mag-
nitude. Dephasing times can also be increased by reduc-
ing the noise spectrum by going to lower temperatures
since S(ω) ∝ T , or reducing sources of charge noise. The
latter has recently been achieved by developing quantum
dots in an undoped Si/SiGe wafer,58 with results indi-
cating that doped materials produce more charge noise
sources via the 2DEG and interface trapping sites. More-
over, the Rabi oscillation term is ∝ η. The dephasing rate
for RTN is ∝ η4, while that due to 1/f noise is approxi-
mately ∝ η2. Reducing η therefore reduces the 1/f noise
dephasing rate faster than the Rabi oscillation gate time
(considerably faster for RTN).
Inhomogeneous magnetic fields are also an essential in-
gredient of singlet-triplet qubits.59 -- 63 There, however, de-
phasing will be dominated by direct coupling to charge
noise via exchange.38 The slanting magnetic field yields
a term ∝ σx, which gives relaxation, but not dephasing.
Evanescent-wave Johnson noise from a micromagnet.
For an electron spin qubit in a fluctuating magnetic field
1
T1
=
µ2
B
2 Xi=x,y
hBi (r) Bi (r)iω0
,
where r is the position of the qubit and ω0 is the Zeeman
splitting caused by the applied field B0 taken here to be
k z. Only the transverse components of B contribute
If a micromagnet is placed at the origin of the
to T1.
coordinates, then, with r = (x1, x2, x3),41
hBiBjiω0 = V Im α (ω0) coth(cid:18) ω0
2kBT(cid:19) 3xixj + δijr2
r8
(6)
Considering only finite frequencies, the magnetic polar-
3
TABLE I. Sample T ∗
2 for a quantum dot with a = 20 nm,
defect position xd = 40 nm, τ = 1 ms for RTN, T = 100 mK,
εZ ≈ 60 µeV, S(ω) for 1/f noise estimated from Refs. 28 and
53, and εr = 12.5, 12.9 for Si/SiGe, GaAs respectively. For
spin-orbit we used Rashba coefficients from Ref. 31.
δε RTN + B RTN+SO 1/f + B 1/f + SO
Si/SiGe 1 meV 30 ms
GaAs 3 meV 1900 s
1 ms
25 ns
130 µs
7 s
30 µs
25 µs
a
RTN + B RTN+SO 1/f + B 1/f + SO
Si/SiGe 30 nm 520 µs
GaAs 50 nm 40 ms
GaAs† 50 nm 610 µs
310 µs
500 ps
500 ps
10 µs
7 ms
840 µs
7 µs
770 ns
770 ns
TABLE II. Sample T ∗
2 for a quantum dot with confinement
energy δε = 0.5 meV, and all parameters except a, xd identical
to Table I; we fix xd/a = 2. †We set η to be constant, so for
GaAs, bsl is ∼ 3 times larger than for Si to account for the
smaller g-factor (not 5 times larger as η ∝ a also.)
izability α (ω) is defined by m (ω) = V α (ω) h (ω), where
m (ω) is the total magnetic moment of the micromag-
net particle, V is the volume of the magnet, and h is a
spatially uniform applied magnetic field.
We need to estimate the dissipative (imaginary) part
of α.
In general α is a matrix, but we are mainly in-
terested in order-of-magnitude estimates, so we ignore
anisotropies and factors of order unity. This is justified
below. The dynamics of the magnet are dominated by
ferromagnetic resonance. In principle, this is dangerous
for qubit decoherence in Si (g ≈ 2), since the fundamen-
tal resonance frequency gµBB0/ for the precessions of
the qubit spin and the bare resonance frequency ω0 of the
Co magnet (g-factor also very close to 2) are close.
Let M0 be the permanent magnetization and let this
be k B0, since this is the geometry chosen in all experi-
ments to date. Following the established theory of ferro-
magnetic resonance,64 we decompose the magnetization
and field into a large time-independent term and a small
time-dependent term. Thus we have M (t) = M0 + m (t)
and H = B0 + h (t). The equation of motion neglecting
spin-orbit coupling and shape anisotropy is:
dM
dt
=
dm
dt ≈ −γ (M0 × h + m × B0) .
The first term is the change in the macroscopic M that
is produced by h, and the second term is the precession
of m in the external field. Changing to the frequency
domain at a fixed driving frequency ω leads to
−iωm = γ(M0h − B0m) × z = (ωM h − ω0m) × z
where ω is the driving frequency: h (t) = he−iωt, ω0 =
γB0 is the "bare" Larmor frequency associated with
the DC applied field B0 and ωM is the frequency as-
sociated with M0 : ωM = γM0; γ = gµB/. Solv-
ing these equations we find m = χh + iGh × z, with
FIG. 2. Time evolution of the spin in Si/SiGe and GaAs
with dot radius a = 20nm, cut-off ω0 = 1s and all other dot
parameters identical.
SxtSx0
1.0
0.8
0.6
0.4
0.2
SxtSx0
1.0
0.8
0.6
0.4
0.2
10
20
30
40
50
60
70
80
90
100
tΜs
RTN Si
1f Si
RTN GaAs
1f GaAs
1
2
3
4
5
6
7
8
9
10
tΜs
RTN Si
1f Si
RTN GaAs
1f GaAs
FIG. 3. Time evolution of the spin in Si/SiGe and GaAs with
fixed confinement energy δε = 0.5meV, cut-off ω0 = 1s and
xd/a = 2, with all other dot parameters identical.
0 − ω2(cid:1).
χ (ω) = ωM ω0/(cid:0)ω2
0 − ω2(cid:1) and G (ω) = ωM ω/(cid:0)ω2
Here χ acts as an ordinary (diagonal) susceptibility while
the G term gives the effect of precession about the mag-
netization. We will not compute the effects of spin-orbit
coupling and shape anisotropy in detail, since they de-
pend on such unknowns as the microcrystallinity of the
magnet. We only note that the resonance frequency ω0
of the magnet is strongly shifted by the restoring forces
due to these effects. Hence the resonance frequencies
of the magnet and qubit, though of the same order of
magnitude, in general do not coincide, and ω0 should be
replaced by the physical resonance frequency ωres 6= ω0.
This physical picture is in good agreement with the noise
spectra in Ref. 34,
in which nearly all the weight is
shifted upwards from the bare resonance frequency.
So far all the response is real and there is no dissi-
pation. The form of the damping term depends on the
mechanism. However, at the phenomenological level of
4
the present treatment, a simple Bloch-Bloembergen form
dM
dt
= −γM × H −(cid:18) M − M0 z
T2
(cid:19),
is sufficient, which leads to the final result
Imχ (ω) = ωM ωres
2
2ωT −1
2 (cid:1)2
res − ω2 + T −2
(cid:0)ω2
,
+ 4T −4
2
and similarly for Im G. There are too many unknowns
to attempt a very accurate estimate of χ and G but we
may use values of parameters from bulk Co65 and Co
wires66,67 to make an order-of-magnitude estimate.
It is simplest to estimate the effect of the noise in the
experiment of Ref. 17, in which the separation r from
the magnet to the qubit satisfies r ≫ L, where L is
the largest linear dimension of the magnet. This is not
the case in the set-ups in Refs. 14 -- 16, and 18, which has
larger magnets closer to the qubit. For an analysis of this
type of device, see Ref. 34. Taking B0 = 20 mT from Ref.
17 as the applied field, we find ωM = 28 GHz using the
formulas above and from experiment T2(magnet) ≈ 10−9
s.65 ωres has the same order of magnitude as ω0 = 4 GHz.
Since all three quantities that enter Imχ are roughly of
the same order, Imχ and Imα can be taken to be of or-
der unity, and indeed α cannot much exceed unity since
it is proportional to the fraction of energy absorbed from
the time-dependent magnetic field h (t). Focusing on the
design in Ref. 59 (somewhat different from Fig. 1), we
substitute r = 1.8 µm and find T1 ≈ T ∗
2 ≈ 10 s. (Since
the Johnson noise is white, the longitudinal and trans-
verse decoherence times do not usually differ by a factor
of 2.) This value for T ∗
2 , is far longer than the measured
2 ≈ 200 ns,17 implying that the micromagnet noise is
T ∗
not contributing to decoherence in this experiment. Ref.
34 also found T1 & 10 s, which suggests that when r ∼ L
there is some cancellation in the noise fields.
In conclusion, we have studied the contribution to
dephasing of an applied inhomogeneous magnetic field
and charge noise on a single-spin qubit and found it is
an effective source of qubit decoherence particularly for
Si/SiGe devices. Our results imply that when implement-
ing slanting magnetic field architectures for spin control,
noise sources need to be considered and reduced to im-
prove coherence times. By contrast, the Johnson noise
from the micromagnet is probably not a significant source
of decoherence in the current generation of experiments.
It may become important as decoherence times become
longer, of the order of seconds.
We are grateful to L. Vandersypen for discussions,
Andrea Morello and M. Pioro-Ladri`ere for bringing to
our attention existing micromagnet designs, and to M.
A. Eriksson for discussion of experimental devices. We
would also like to acknowledge support from the Gordon
Godfrey bequest. This research was partially supported
by the US Army Research Office (W911NF-12-0607).
Appendix A: Total Hamiltonian
S0xe−t/T ∗
2 , with
5
(S5)
.
The total Hamiltonian is H = H0+HN +HZ, which, in
the basis {D0,↑, D0,↓, D+,↑, D+,↓, D−,↑, D−,↓}, is written
as
H =
,
(S2)
ε+
0 0 α η α η
0 ε−
η α η α
0
α η ε+
1 0 β 0
η α 0 ε−
1 0 β
α η β 0 ε+
1 0
η α 0 β 0 ε−
1
0 = ε0 + v0 ± εZ and ε±
where ε±
1 = ε1 + v1 ± εZ
are the Zeeman-split orbital levels including the charge
noise and magnetic field contributions, and the mag-
netic field matrix elements εZ = hD0,↑HZD0,↑i and
η = 1
In the Schrieffer-Wolff transformation we keep first or-
der terms in δv(t) and εz, and neglected terms propor-
tional to the identity matrix and non-fluctuating terms
(terms not involving δv(t)).
2 gµBhD0BzD+i = 1
2 gµBhD−BzD0i.
Appendix B: Formal treatment of dephasing
The qubit is described by a spin density matrix ρ(t) =
1
σ · S(t) which satisfies the quantum Liouville equation
2
dρ/dt + (i/)[H, ρ] = 0. The fluctuating z-component
of the effective Hamiltonian causes dephasing, which for
RTN is V(t) = V (t)σz(−1)N (t), where N (t) = 0, 1 is a
Poisson random variable with fluctuator switching time
τ . We work in a rotating reference frame which takes into
account the effect of the laboratory effective magnetic
field, assumed to be spatially homogeneous, in which the
z-component of the spin projection is conserved so we
are studying pure dephasing. To determine the full time
evolution of the density matrix with initial conditions
ρ(0) = 1
V (t′)dt′, with
2
h(t) = h(t). The time evolution of the ith spin compo-
nent Si(t) = tr[σiρ(t)] is
R t
σ · S0, we define h(t) ≡ 1
0
Si(t) = S0i cos h(t) − ǫijkhk(t) sin h(t)
+ hi(t)[h(t) · S0][1 − cos h(t)].
(S3)
If Sx(0) = S0x x then Sx(t) ≈ S0x cos h(t), and taking
the average over the realisations of cos h(t),31,68 -- 70
hcos h(t)i = e−t/τ" sinh t
Ξτ
+ cosh Ξt#,
(S4)
where Ξ = p(1/τ )2 − V 2/2. We consider fluctuators
with switching times τ < 1 µs, in which the condition
τ )2 is satisfied and we may expand Eq. (S4) in
V 2 ≪ (
. The initial spin decays exponentially as Sx(t) =
V 2τ 2
2
(cid:18) 1
2 (cid:19)RTN
T ∗
=
V 2τ
22 ,
where for the slanting magnetic field V = 8η2δv(t)εz
δε3
For 1/f noise the main contribution is concentrated
at low frequencies, so it primarily affects qubit dephas-
ing in both semiconductor35 -- 38 and superconductor39,40
It is typically Gaussian in semiconductors51
devices.
and can be described by the correlation function S(t) =
hV (0)V (t)i. The Fourier transform of this is the noise
spectral density which has the form S(ω) = γN kB T
,
where γN (units of energy) is obtained from experi-
ment. Hence, for V(t) in the qubit subspace, we have
S(ω). We write Sx(t) = S0xe−χ(t),
ω
δε3 (cid:17)2
SV (ω) ≈ (cid:16) 8η2εz
where71
χ(t) =
2γN kBT
2
δε3 (cid:19)2
(cid:18) 8η2εz
Z ∞
ω0
dω(cid:18) sin2 ωt/2
ω3
(cid:19) , (S6)
for a low-frequency cut-off ω0 typically chosen as the in-
verse of the measurement time. We assume ω0t ≪ 1 and
2 (cid:17)2
we can approximate χ(t) ≈(cid:16) t
2 (cid:19)1/f ≈r γN kBT
22 (cid:18) 8η2εz
δε3 (cid:19) .
(cid:18) 1
ω0t , with
ln 1
(S7)
T ∗
T ∗
Appendix C: Johnson Noise
The detailed derivation of Eq. (6) will be given else-
where. However, its qualitative form is not difficult to
understand by analogy with an interaction of the van der
Waals type.72 Let the ferromagnetic particle be located
at the origin. A momentary fluctuation of the magnetic
dipole of the qubit produces a corresponding fluctuation
of the magnetic field ∼ 1/r3 at the ferromagnet. This
induces a magnetic polarization µ ∼ α/r3 of the magnet
which in turn causes a field B ∼ µ/r3 ∼ α/r6 at the
qubit. The temperature dependence is specified by the
fluctuation-dissipation theorem, which also requires that
it is only the dissipative part of α that contributes.
1A. M. Tyryshkin, T. Shinichi, J. J. L. Morton, H. Riemann, N. V.
Abrosimov, P. Becker, H. Pohl, T. Schenkel, M. L. W. Thewalt,
K. M. Itoh, and S. A. Lyon, Nature Materials 11, 143 (2012).
2S. Amasha, K. MacLean, I. P. Radu, D. M. Zumbuhl, M. A.
Kastner, M. P. Hanson, and A. C. Gossard, Phys. Rev. Lett.
100, 046803 (2008).
3N. Bar-Gill, L. Pham, A. Jarmola, D. Budker, and R. Walsworth,
Nature 453, 1043 -- 1049 (2008).
4D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
5G. Burkard, D. Loss, and D. P. DiVincenzo, Phys. Rev. B 59,
2070 (1999).
6P. Huang and X. Hu, Phys. Rev. B 90, 235315 (2014).
7K. M. Itoh and H. Watanabe, arXiv:1410.3922 (to be published
in MRS Communications).
6
8F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons,
L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Coppersmith,
and M. A. Eriksson, Rev. Mod. Phys. 85, 961 -- 1019 (2013).
9H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara,
K. Takashina, and Y. Hirayama, Phys. Rev. B 77, 073310 (2008).
10M. Prada, R. H. Blick, and R. Joynt, Phys. Rev. B 77, 115438
(2008).
40Y. Makhlin, G. Schon, and A. Shnirman, Rev. Mod. Phys. 73,
357 -- 400 (2001).
41See supplemental material at [URL will be inserted by AIP] for
the total Hamiltonian and details on the formal treatment of
dephasing and Johnson noise.
42J. H. Davies, The physics of low-dimensional semiconductors:
an introduction (Cambridge University Press, 1998).
11J. K. Gamble, M. Friesen, S. N. Coppersmith, and X. Hu, Phys.
43R. Winkler, Spin-orbit coupling effects in two-dimensional elec-
Rev. B 86, 035302 (2012).
12F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C.
Nowack, T. Meunier, L. P. Kouwenhoven, and L. M. K. Vander-
sypen, Nature 442, 766 -- 771 (2006).
13E. Kawakami, P. Scarlino, L. R. Schreiber, J. R. Prance, D. E.
Savage, M. G. Lagally, M. A. Eriksson, and L. M. K. Vander-
sypen, Appl. Phys. Lett. 103, 132410 (2013).
14K. C. Nowack, F. H. L. Koppens, Y. V. Nazarov, and L. M. K.
Vandersypen, Science 318, 1430 (2007).
15M. Pioro-Ladri`ere, T. Obata, Y. Tokura, Y. S. Shin, T. Kubo,
K. Yoshida, T. Taniyama, and S. Tarucha, Nature Phys. 4, 776 --
779 (2008).
16M. Pioro-Ladri`ere, Y. Tokura, T. Obata, T. Kubo,
and
S. Tarucha, Appl. Phys. Lett. 90, 024105 (2007).
17Y. Tokura, W. G. van der Wiel, T. Obata, and S. Tarucha, Phys.
Rev. Lett. 96, 047202 (2006).
18E. Kawakami, P. Scarlino, D. R. Ward, F. R. Braakman, D. E.
Savage, M. G. Lagally, M. Friesen, S. N. Coppersmith, M. A.
Eriksson, and L. M. K. Vandersypen, Nature Nanotech. 9, 666 --
670 (2014).
19A. van der Ziel, Proceedings of the IEEE 58, 1178 -- 1206 (1970).
20S. W. Jung, T. Fujisawa, Y. Hirayama, and Y. H. Jeong, Appl.
Phys. Lett. 85, 768 -- 770 (2004).
21K. Hitachi, T. Ota,
and K. Muraki, Appl. Phys. Lett. 102,
192104 (2013).
22C. R. Helms and E. H. Poindexter, Rep. Prog. Phys. 57, 791 -- 852
(1994).
23E. Machlin, "Chapter {VII} - Defects and Properties," in Ma-
terials Science in Microelectronics {II}, edited by E. Machlin
(Elsevier Science Ltd, Oxford, 2006) second edition ed., pp. 215 --
250.
24E. Paladino, Y. M. Galperin, G. Falci, and B. L. Altshuler, Rev.
tron and hole systems (Springer, 2003).
44E. I. Rashba, Phys. Rev. B 78, 195302 (2008).
45D. Culcer, L. Cywi´nski, Q. Li, X. Hu, and S. Das Sarma, Phys.
Rev. B 82, 155312 (2010).
46C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin,
S. Lee, C. Tahan, G. Klimeck, A. Morello, and A. S. Dzurak,
Nat. Comm. 4, 2069 (2013).
47With these assumptions the variations in V(t) arise from η, δv
and δε.
48A. Gold, "Transport properties of silicon/silicon germanium
(Si/SiGe) nanostructures at low temperatures," in Silicon Ger-
manium (SiGe) Nanostructures, Woodhead Publishing Series in
Electronic and Optical Materials, edited by Y. Shiraki and N. Us-
ami (Woodhead Publishing, 2011) pp. 361 -- 398.
49N. Mori, "Electronic band structures of silicon -- germanium
(SiGe) alloys," in Silicon-Germanium (SiGe) Nanostructures,
Woodhead Publishing Series in Electronic and Optical Materi-
als, edited by Y. Shiraki and N. Usami (Woodhead Publishing,
2011) pp. 26 -- 42.
50S. Adachi, "Optical properties of AlGaAs:
reststrahlen re-
gion (discussion)," in Properties of aluminium gallium arsenide,
edited by S. Adachi (INSPEC, the Institution of Electrical Engi-
neers, 1993) pp. 89 -- 94.
51S. Kogan, Electronic noise and fluctuations in solids (Cambridge
University Press, New York, 2008).
52P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 -- 516 (1981).
53K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka,
T. Kodera, S. Oda, and S. Tarucha, Appl. Phys. Lett. 102,
123113 (2013).
54L. V. C. Assali, H. M. Petrilli, R. B. Capaz, B. Koiller, X. Hu,
and S. Das Sarma, Phys. Rev. B 83, 165301 (2011).
55H. Bluhm, S. Foletti, D. Mahalu, V. Umansky, and A. Yacoby,
Mod. Phys. 86, 361 -- 418 (2014).
Phys. Rev. Lett. 105, 216803 (2010).
25Y. Nakamura, Y. A. Pashkin, T. Yamamoto, and J. S. Tsai,
56H. Bluhm, S. Foletti, I. Neder, M. Rudner, D. Mahalu, V. Uman-
Phys. Rev. Lett. 88, 047901 (2002).
26O. E. Dial, M. D. Shulman, S. P. Harvey, H. Bluhm, V. Umansky,
and A. Yacoby, Phys. Rev. Lett. 110, 146804 (2013).
27E. Dupont-Ferrier, B. Roche, B. Voisin, X. Jehl, R. Wacquez,
M. Vinet, M. Sanquer, and S. D. Franceschi, Phys. Rev. Lett.
110, 136802 (2013).
28K. D. Petersson, J. R. Petta, H. Lu, and A. C. Gossard, Phys.
Rev. Lett. 105, 246804 (2010).
29T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hi-
rayama, Phys. Rev. Lett. 91, 226804 (2003).
30P. Huang and X. Hu, Phys. Rev. B 89, 195302 (2014).
31A. Bermeister, D. Keith, and D. Culcer, Appl. Phys. Lett. 105,
192102 (2014).
sky, and A. Yacoby, Nature Phys. 7, 109 (2011).
57J. Muhonen, J. Dehollain, A. Laucht, F. Hudson, T. Sekiguchi,
K. Itoh, D. Jamieson, J. McCallum, A. Dzurak, and A. Morello,
Nature Nanotechnology 9, 986991 (2014).
58T. Obata, K. Takeda, J. Kamioka, T. Kodera, W. M. Akhtar,
K. Sawano, S. Oda, Y. Shiraki, and S. Tarucha, JPS Conference
Proceedings 1, 012030 (2014).
59X. Wu, D. R. Ward, J. R. Prance, D. Kim, J. K. Gamble, R. T.
Mohr, Z. Shi, D. E. Savage, M. G. Lagally, M. Friesen, S. N.
Coppersmith, and M. A. Eriksson, Proc. Natl. Acad. Sci. 111,
11938 -- 11942 (2014).
60C. H. Wong, M. A. Eriksson, S. N. Coppersmith, and M. Friesen,
Phys. Rev. B 92, 045403 (2015).
32L. S. Langsjoen, A. Poudel, M. G. Vavilov, and R. Joynt, Phys.
61R. Thalineau, S. R. Valentin, A. D. Wieck, C. Bauerle, and
Rev. B 89, 115401 (2014).
33S. Kolkowitz, A. Safira, A. A. High, R. C. Devlin, S. Choi, Q. P.
Unterreithmeier, D. Patterson, A. S. Zibrov, V. E. Manucharyan,
H. Park, and M. D. Lukin, Science 347, 1129 -- 1132 (2015).
34R. Neumann and L. R. Schreiber, J. Appl. Phys. 117, 193903
(2015).
35I. Martin and Y. M. Galperin, Phys. Rev. B 73, 180201 (2006).
36E. Paladino, Y. M. Galperin, G. Falci, and B. L. Altshuler, "1/f
implications for solid-state quantum information," Rev.
noise:
Mod. Phys. 86, 361 (2014).
37L. Chirolli and G. Burkard, Adv. Phys. 57, 225 (2008).
38D. Culcer, X. Hu, and S. Das Sarma, Appl. Phys. Lett. 95,
073102 (2009).
39J. Clarke and F. K. Wilhelm, Nature 453, 1031 -- 1042 (2008).
T. Meunier, Phys. Rev. B 90, 075436 (2014).
62M. D. Shulman, O. E. Dial, S. P. Harvey, H. Bluhm, V. Umansky,
and A. Yacoby, Science 336, 202 -- 205 (2012).
63B. M. Maune, M. G. Borselli, B. Huang, T. D. Ladd, P. W.
Deelman, K. S. Holabird, A. A. Kiselev, I. Alvarado-Rodriguez,
R. S. Ross, A. E. Schmitz, M. Sokolich, C. A. Watson, M. F.
Gyure, and A. T. Hunter, Nature 481, 344 -- 347 (2012).
64S. M. Vonsovskii, Ferromagnetic Resonance (Pergamon Press,
1966).
65Z. Frait, Czech. Journ. Phys. 11, 360 (1961).
66R. Ferr´e, K. Ounadjela, J. M. George, L. Piraux, and S. Dubois,
Phys. Rev. B 56, 14066 -- 14075 (1997).
67M. Respaud, M. Goiran, J. M. Broto, F. H. Yang, T. Ould-
Ely, C. Amiens, and B. Chaudret, Phys. Rev. B 59, 3934 -- 3937
(1999).
68R. de Sousa and S. Das Sarma, Phys. Rev. B 68, 115322 (2003).
69D. Culcer, X. Hu, and S. D. Sarma, Appl. Phys. Lett. 95, 073102
(2009).
70D. Culcer and N. M. Zimmerman, Appl. Phys. Lett. 102, 232108
(2013).
71R. de Sousa, "Electron spin as a spectrometer of nuclear-spin
noise and other fluctuations," in Electron Spin Resonance and
Related Phenomena in Low-Dimensional Structures, Topics in
Applied Physics, Vol. 115, edited by M. Fanciulli (Springer Berlin
Heidelberg, 2009) pp. 183 -- 220.
72L. Pitaevskii and E. Lifshitz, Statistical Physics, Part 2: Theory
of the Condensed State (Butterworth-Heinemann, 1980).
7
|
1601.01889 | 2 | 1601 | 2016-01-12T07:34:17 | Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation | [
"cond-mat.mes-hall"
] | We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality. | cond-mat.mes-hall | cond-mat | Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using
Oxygen Ion Implantation
M. Berl,1, a) L. Tiemann,1 W. Dietsche,1 H. Karl,2 and W. Wegscheider1
1)Solid State Physics Laboratory, ETH Zurich, 8093 Zurich,
Switzerland
2)Lehrstuhl fur Experimentalphysik IV, Universitat Augsburg, 86159 Augsburg,
Germany
(Dated: 2 July 2021)
We present a reliable method to obtain patterned back gates compatible with high
mobility molecular beam epitaxy (MBE) via local oxygen ion implantation that sup-
presses the conductivity of an 80 nm thick silicon doped GaAs epilayer. Our technique
was optimized to circumvent several constraints of other gating and implantation
methods. The ion-implanted surface remains atomically flat which allows unper-
turbed epitaxial overgrowth. We demonstrate the practical application of this gating
technique by using magneto-transport spectroscopy on a two-dimensional electron
system (2DES) with a mobility exceeding 20× 106 Vs/cm2. The back gate was spa-
tially separated from the Ohmic contacts of the 2DES, thus minimizing the proba-
bility for electrical shorts or leakage and permitting simple contacting schemes.
6
1
0
2
n
a
J
2
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
9
8
8
1
0
.
1
0
6
1
:
v
i
X
r
a
a)Electronic mail: mberl@phys.ethz.ch
1
Reliable electrostatic gating is a key element in most experiments in semiconductor
physics to tune the charge carrier density of a two-dimensional electron (2DES) or hole
(2DHS) system, which is intrinsically defined by doping. For sophisticated mesoscopic sys-
tems or nanostructures, gates need to be patterned. While structured top gates can be
obtained with relative ease during the sample fabrication, patterning back gates is demand-
ing and each available method has certain technological limitations.
Structured back gates can be obtained by thinning down the substrate, followed by the
evaporation of metal gates on the backside1,2. The fragility of these thinned samples, how-
ever, make their handling difficult.
In addition, as a result of the large gate separation,
substantial gate voltages have to be applied. Several alternative technologies have therefore
been exploited to pattern back gates on the epitaxial side of the wafer. For overgrown pre-
structured back gates, the gates are wet-chemically etched out of a highly doped layer on
the epitaxial side of the substrate3 -- 6, prior to the growth of the heterostructure. Since high
mobility epitaxy critically depends on the surface roughness, the etched surface of these
systems will not favor high mobility 2DESs. A different approach is the implantation of
oxygen ions to locally suppress the conductivity of a doped epilayer on an otherwise insulat-
ing wafer. It is a commonly used industrial technique and has also been applied in research
scale molecular beam epitaxy7,8. However, along with focused ion beam implantation9, all
these methods can result in an amorphization of the surface and are not tailored to highest
mobility samples required in fundamental research.
Here we report on an optimized technique using oxygen ion implantation which circum-
vents the limitations of other available back gating technologies. Our method allows to struc-
ture entire wafers for high mobility heterostructure growth by using standard optical photo
resist as a shadow mask for the impinging oxygen ions. Atomic force microscopy (AFM) con-
firms that the substrate surface remains atomically flat after the implantation which is the
prerequisite for high mobility molecular beam epitaxy. We use standard magneto-transport
measurements to demonstrate the suitability and reliability of this gating method and the
compatibility with high mobility MBE.
The fabrication begins with a metal organic chemical vapor deposition (MOCVD) of a
80 nm thick homogeneous silicon doped GaAs epilayer grown on a semi-insulating two inch
GaAs wafer (Fig. 1a). The doping layer is covered by a 30 nm thick undoped GaAs caping
layer to ensure that the peak value of the subsequent implantation will be located within
2
FIG. 1. a)-f) Sample processing scheme; a) MOCVD growth of an 80 nm Si doped GaAs epilayer
(green layer) and a 30 nm thick undoped GaAs cap grown on a (001) semi-insulating GaAs wafer b)
Patterning with photo resist c) Oxygen ion implantation d) Epiready cleaning of the surface after
photo resist removal e) MBE overgrowth including a quantum well confined 2DES (green layer) f)
Wet chemical mesa etching and removal of the 2DES over the back gate contact areas g) Implan-
tation depth and doping profile within the GaAs substrate. The total implantation (red squares)
is the sum of two implantation distributions with 1.6× 1013 Ions/cm2 at 20 keV (light grey shaded
area) and 1.0× 1014 Ions/cm2 at 50 keV (dark grey shaded), which were determined from TRIM
simulations11. The doping layer (30 nm-110 nm) with a doping concentration of 7.5× 1017 cm−3 is
indicated by the green bar.
the doping layer. The shift of the peak further into the substrate also reduces the implan-
tation damage to the surface. We experimented with doping concentrations ranging from
3× 1016 cm−3 to 3× 1018 cm−3 and found 7.5× 1017 cm−3 to be the most reliable choice for
the subsequent ion implantation. If the doping concentration is too high, it is not possible
to suppress the conductivity by oxygen implantation10. If the doping concentration is too
low, the resistivity of the back gate and its Ohmic contacts will be too high. After the
MOCVD growth, the wafer is covered with photo resist (Microchemicals GmbH AZ1518)
and patterned by standard optical photo lithography (Fig. 1b). The photo resist is suffi-
ciently thick (∼ 2 µm) to work as a selective absorber, i.e., shadow mask, for the impinging
oxygen ions so that only the exposed parts will become implanted with ions (Fig. 1c). The
reliable operation of our gating technique crucially depends on the interplay between doping
concentration and ion implantation profile which is fundamentally given by the dose and
3
the energy of implantation. To ensure that most of the ion incorporation is targeted at the
80 nm thick doping layer, we have chosen two implantation doses of different energies after
determining the optimal implantation distribution with a TRIM simulation11 (Fig. 1g). We
tested several pairs of doses and found 1.6× 1013 Ions/cm2 at 20 keV and 1.0× 1014 Ions/cm2
at 50 keV to be the optimal dose which allows for a stable suppression of conductivity while
minimizing the impact of implantation to the surface crystal structure. The atomically
smoothness of the implanted surface was confirmed with AFM measurements. The measured
root mean square roughness is smaller than 0.5 nm, which is comparable to the roughness
of non-implanted surfaces.
Following implantation, the photo resist has to be carefully and completely removed
from the wafer with acetone and plasma ashing. The wafer is then undergoing an epi-
ready treatment (Fig. 1d), which consists of a surface cleaning with H2SO4 acid and a
surface passivation by controlled surface oxidation on a hotplate (3 minutes at 300◦C).
The epi-ready process is necessary to prepare the surface for the MBE overgrowth. For
the heterostructure to be overgrown we choose comparable conditions as used for standard
high mobility structures, which includes an arsenic-free bake-out of the wafer at around
450◦C and a subsequent high temperature treatment (630◦C for about 5 hours) during
the heterostructure growth (Fig. 1e). After this high temperature treatment we observed
changes in the resistivity of the implanted layers. These changes, which are known to arise
from the annealing of the implantation induced defects12,13, however, are negligible and do
not affect the gate operation.
We have grown several GaAs/AlGaAs high mobility heterostructures on back gate pat-
terned wafers and now present the results from two of these MBE overgrown heterostruc-
tures, labeled as HS1 & HS2. HS1 is doubled-sided delta-doped, whereas HS2 is single-sided
delta-doped on the surface-facing side of the quantum well to avoid screening effects be-
tween 2DES and gate. Both heterostructures have a 27 nm wide GaAs quantum well buried
230 nm below the sample surface. The setback between doping layers and 2DES is 80 nm
and the distance between back gate and 2DES is ∼ 1 µm. The Al concentration was kept low
(∼ 24%) around the 2DES to obtain high mobilities but was increased towards the substrate
in several steps up to ∼88% to prevent gate leakages.
Standard lock-in magneto-transport measurements on square van der Pauw samples and
soldered indium contacts were used to determine whether the insulating and conductive parts
4
FIG. 2. Magneto transport measurements at T≈ 1 K on van der Pauw samples with the same
high mobility heterostructure (HS1) grown on different types of substrates; b) Substrate is silicon
doped but not oxygen implanted; c) Substrate is silicon doped and oxygen implanted; d) Substrate
is neither silicon doped nor oxygen implanted. (*) Values were calculated from Hall measurements
at low magnetic field.
of the sample are working properly after the high mobility heterostructure overgrowth. At
low temperatures and high (perpendicular) magnetic fields, the density of states of the 2DES
condenses into a dispersionless bands of quantized Landau levels. As a result of this Landau
quantization, the longitudinal resistance displays Shubnikov -- de Haas oscillations whereas
the transversal Hall resistance displays plateaus at integer values of the filling factor ν ∝ n
B ;
known as the integer quantum Hall effect14. Figure 2a shows magneto-transport measure-
ments on a van der Pauw sample which was grown on a conductive silicon doped substrate
without implantation. In this sample the contacts penetrate through the heterostructure
including the conductive substrate. The quantum Hall effects exhibited by the 2DES are
therefore superimposed to the parasitic parallel conductance originating from the silicon
doped substrate. However, when the implantation sufficiently suppresses the substrate con-
ductance, only the pristine quantum Hall effects (Fig. 2b) of the 2DES are observed. Charge
carrier mobilities of 20 Mio. cm2/Vs could be measured, demonstrating unambiguously the
suitability of implanted substrates for the delicate high mobility heterostructure overgrowth.
5
FIG. 3. 2DES mobility and carrier density as a function of the back gate voltage on a Hall bar
structure using HS2 (T≈ 25 mK). Inset: Picture of an indium (black spots) contacted Hall bar mesa
with the implanted substrate areas highlighted in red and the non-implanted conductive substrate
parts highlighted in blue.
To study the impact of the implantation on high mobility heterostructure growth, we have
performed measurements on an identical heterostructure grown on a semi-insulating GaAs
wafer (Fig. 2c) which was neither doped nor ion-implanted. The magneto-transport mea-
surements clearly show that both the signatures of the quantum Hall effects and mobilities
and carrier densities are nearly identical to that from the implanted substrate.
High mobility heterostructures are the testbed for fragile exotic quantum effects. A promi-
nent example are the fractional quantum Hall effects15,16 that arise due to electron-electron
interactions at non-integer values of the filling factor. To demonstrate the utilization and ad-
vantages of an implantation patterned back gate, we present low temperature measurements
on standard Hall bar structures of high mobility heterostructures (HS1 & HS2).
As depicted in the inset of Fig. 3, the inner Hall bar region of our Hall bar structure
is located above the back gate, i.e., the region which was not ion-implanted, whereas the
region underneath the contact arms was rendered non-conductive via oxygen ion bombard-
ment. The exposed contacts (including the contact to the back gate) can therefore directly
be contacted without risking an electrical short between back gate and 2DES. The only
6
FIG. 4. Magneto transport measurements at T≈ 25 mK on a Hall bar structure using HS1 with
gate voltages applied from -2.5 V to +2 V. As a guide to the eye the Landau level filling factor 2 is
labeled in each measurement. For reference, some fractional quantum Hall states were labeled as
well.
lithographic step which is necessary before making indium solder contacts is a wet-chemical
etching process to define the Hall bar mesa and to remove the 2DES above the back gate
contact areas (Fig. 1f). For HS2 the charge carrier density of the 2DES can be tuned over a
wide range (Fig. 3) without provoking significant leakage current from the gate (Ileakage (cid:46) 30
pA). Over almost the entire range the carrier density is responding linearly to the gate volt-
age. With increasing density the mobility could be raised from unbiased ∼ 6 Mio cm2/Vs
up to ∼ 18 Mio. cm2/Vs by applying a gate voltage of about +3.5V.
For HS1 low temperature magneto-transport measurements on the high mobility het-
erostructure are shown in Fig.4 for three exemplary gate voltages. The existence of a variety
of fractional quantum states are indicative of the very high sample quality. Coincident with
density changes, the observed fractional quantum Hall states are becoming more and less
distinct. The highest mobility (∼ 18 Mio. cm2/Vs) was achieved by increasing the charge
carrier density to ∼ 3.7× 1011 cm−2 via the back gate.
In summary, we demonstrated that the conductivity of a 80 nm thick silicon doped GaAs-
substrate can be suppressed by oxygen implantation. No negative influences to the sample
7
surface, the heterostructure growth or the overall quality of the high mobility 2DES were
observed. The functionality of a patterned ion-implantation to define back gate structures
was demonstrated with magneto-transport measurements. The method we presented here
is very reliable and gate-able structures can be produced with relative ease. We believe that
this method will also be suitable for a variety of nanostructures, which currently rely on top
gating schemes, as well as for an improved concept for double layer 2DES/2DHS systems4,5,9.
The authors acknowledge financial support by the Swiss National Science Foundation
(SNF) and the NCCR QSIT (National Competence Center in Research - Quantum Science
and Technology. We thank Emilio Gini (ETH-FIRST cleanroom staff) for providing us with
n-doped MOCVD substrates.
REFERENCES
1J.P. Eisenstein, L.N. Pfeiffer, and K.W. West, Appl. Phys. Lett. 57, 2324 (1990).
2M.V. Weckwerth, J.A. Simmons, N.E. Harff, M.E. Sherwin, M.A. Blount, W.E. Baca, and
H.C. Chui, Superlattice Microst. 20, 561 (1996).
3M.P. Grimshaw, D.A. Ritchie, J.H. Burroughs, and G.A.C. Jones, J. Vac. Sci. Technol. B
12(2), 1290 (1994).
4H. Rubel, A. Fischer, W. Dietsche, K. von Klitzing, and K. Eberl, Mater. Sci. Eng. B 51,
207 (1998).
5L. Tiemann, W. Dietsche. M. Hauser, and K. von Klitzing, New J. Phys. 10, 045018 (2008).
6X. Huang, W. Dietsche, M. Hauser, and K. von Klitzing, Phys. Rev. Lett. 109, 156802
(2012).
7Y. Ota, M. Yanagihara, and M. Inada, J. Appl. Phys. 64, 926 (1988).
8C.L. Chen, L. J. Mahoney, S.D. Calawa, K.M. Molvar, P.A. Maki, R.H. Mathews, J.P.
Sage, and T.C.L.G. Sollner, Appl. Phys. Lett. 74, 4058 (1999).
9K.M. Brown, E.H. Linfield, D.A. Ritchie, G.A.C. Jones, M.P.Grimshaw, and M. Pepper,
Appl. Phys. Lett. 64, 1827 (1994).
10S.J. Pearton, Ion implantation for isolation of III-V semiconductors, Mater. Sci. Rep. 4
(1990).
11J.F. Ziegler, and J.P. Biersack, Monte Carlo simulation for the transport of ions in matter,
SRIM-2013.
8
12S.J. Pearton, J.M. Poate, F. Sette, J.M. Gibson, D.C. Jacobson and J.S. Williams, Nucl.
Instr. Meth. Phys. Res. B19/20, 369 (1987).
13H. Muessig, C. Woelk, H. Brugger, and A. Forchel, Inst. Phys. Conf. Ser. No 136, 529
(1993).
14K. v. Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 45, 494 (1980).
15D.C. Tsui, H.L. Stormer, A.C. Gossard Phys. Rev. Lett. 48, 1559 (1982).
16R.B. Laughlin, Phys. Rev. Lett. 50, 1395 (1983).
9
|
1708.01740 | 1 | 1708 | 2017-08-05T09:23:43 | Geometrical phase shift in Friedel oscillations | [
"cond-mat.mes-hall"
] | This work addresses the problem of elastic scattering through a localized impurity in a one-dimensional crystal with sublattice freedom degrees. The impurity yields long-range interferences in the local density of states known as Friedel oscillations. Here, we show that the internal degrees of freedom of Bloch waves are responsible for a geometrical phase shift in Friedel oscillations. The Fourier transform of the energy-resolved interference pattern reveals a topological property of this phase shift, which is intrinsically related to the Bloch band structure topology in the absence of impurity. Therefore, Friedel oscillations in the local density of states can be regarded as a probe of wave topological properties in a broad class of classical and quantum systems, such as acoustic and photonic crystals, ultracold atomic gases in optical lattices, and electronic compounds. | cond-mat.mes-hall | cond-mat |
Geometrical phase shift in Friedel oscillations
Univ Lyon, Ens de Lyon, Univ Claude Bernard, CNRS, Laboratoire de Physique, F-69342 Lyon, France
C. Dutreix and P. Delplace
This work addresses the problem of elastic scattering through a localized impurity in a one-dimensional
crystal with sublattice freedom degrees. The impurity yields long-range interferences in the local density of
states known as Friedel oscillations. Here, we show that the internal degrees of freedom of Bloch waves are
responsible for a geometrical phase shift in Friedel oscillations. The Fourier transform of the energy-resolved
interference pattern reveals a topological property of this phase shift, which is intrinsically related to the Bloch
band structure topology in the absence of impurity. Therefore, Friedel oscillations in the local density of states
can be regarded as a probe of wave topological properties in a broad class of classical and quantum systems,
such as acoustic and photonic crystals, ultracold atomic gases in optical lattices, and electronic compounds.
Electric screening in metals arises as a collective response
of the conduction electrons to the Coulomb potential of a
charged impurity. A long wavelength description of the prob-
lem captures the exponential screening of the impurity by the
surrounding electrons, in agreement with the classical picture
that depicts electrons as point charges. In quantum mechan-
ics, however, particles are described by wavefunctions and
may interfere.
In the 1950s, J. Friedel actually understood
that a charged impurity additionally yields a long-range inter-
ference pattern in the electronic density [1]. It consists of al-
gebraically decaying 2kF-wavevector oscillations, and results
from Fermi surface nesting associated to twice the Fermi mo-
mentum kF. Thus, these oscillations reported by Friedel for
charges in metals rely on wave features, and they have subse-
quently been revisited in other contexts, such as magnetic in-
teractions [2–5] and noninteracting electrons [6–8]. In partic-
ular, Friedel oscillations have been observed in nonrelativistic
electron gases via scanning tunnelling microscopy (STM); an
experimental technique that images the local density of states
(LDOS), i.e., the electronic density with atomic-scale and en-
ergy resolutions [9–11]. These experiments have confirmed
that backscattering was the most efficient process involved in
the elastic scattering through short-range impurities. For non-
interacting electrons in a one-dimensional crystal, backscat-
tering is indeed responsible for 2k0-wavevector Friedel oscil-
lations that behave as
δρ(m, ω) = V(ω) cos(2k0m) .
(1)
Here δρ denotes the correction to the LDOS induced by a lo-
calized impurity, m labels the distance to the impurity in units
of the Bravais lattice vector, V(ω) is some real function, and
wavevector 2k0 refers to the elastic backscattering between
the time-reversed states −k0 and k0 at energy ω ( = 1). Such
backscattering wavevectors are illustrated in Fig. 1 by the dou-
ble arrows. The reader may find the details of the derivation
of Eq. (1) in Supplemental Material (SM) [12].
In this letter, we would like to highlight the effects of inter-
nal degrees of freedom on the long-range interference pattern
induced by a localized impurity. These degrees of freedom
could for example consist of spins up and down, or charge-
conjugated particles such as electrons and holes. Here, how-
ever, we rather consider they result from a sublattice structure,
FIG. 1. (Color online) Top: monatomic (left) and diatomic (right)
pattern crystals with a localized impurity V. Bottom: Bloch spec-
tra of the monatomic (left) and diatomic (right) pattern crystals in
the first Brillouin zone. The horizontal double arrows depict elastic
scattering processes between time-reversed states −k0 and k0.
as illustrated in the right-hand column of Fig. 1. This one-
dimensional dimerized structure naturally appears in some or-
ganic compounds [13], and may be viewed as resulting from
the Peierls instability of a metallic crystal like the one depicted
in the left-hand column of Fig. 1. It has also been realized in
acoustics, photonics and ultracold atomic gases [14–17]. The
system is obviously invariant under time and space inversions.
For the sake of simplicity we restrict the discussion to two
sublattices, namely, A and B, within a nearest-neighbor tight-
binding approximation. Nonetheless, this is not detrimental
to the relevance of the results presented below, and the reader
may find a generalization to an arbitrary number of freedom
degrees in SM [12]. The Bloch band structure is then charac-
terized by a 2 × 2 Hermitian matrix which, in the sublattice
i=1 di(k) σi, where
d1(k) = t1(α + cos k) and d2(k) = t1 sin k. The parameters
αt1 and t1 respectively denote the intra- and inter-dimer hop-
ping amplitudes whose ratio is α, while matrix σi is the ith
Pauli matrix. Since there is only one energy scale in this de-
scription, energy will be given in units of t1, if not otherwise
specified. This prototypical model is sometimes referred to as
SSH model, with reference to the work of Su, Schrieffer, and
Heeger about the formation of topological solitons in poly-
acetylene CnHn [13]. Note that there is no term scaling with
basis {A, B}, generically reads H(k) = (cid:80)2
-π-k0k0πEnergyelastic scattering-π-k0k0πEnergyelastic scattering 1(k) + d2
σ3 under time and space inversions. Furthermore, we disre-
gard any contribution scaling with the identity matrix in the
Bloch Hamiltonian matrix, such as next-nearest-neighbor pro-
cesses. This would neither change the Bloch wavefunctions,
nor the effects they are responsible for in the elastic scatter-
ing. The band structure is then entirely characterized by the
set of the dispersion relation E±(k) = ±[d2
2(k)]1/2 and
the Bloch eigenstates (cid:104)±, k = (1, ±eiθk). The Bloch eigen-
states are not gauge invariant, obviously, since eiφk±, k(cid:105) is also
eigenstate for any arbitrary φk. But function θk, which defines
the phase shift between the two internal degrees of freedom of
Bloch spinors, is not affected by such a gauge change. How-
ever, this phase shift turns out to be ill-defined, because there
exists an ambiguity when defining the diatomic unit cell of
the translationally invariant crystal. Indeed, this phase shift
can be defined either as θk, or as θk − k. Of course, the con-
vention we chose to describe the system will never affect the
observable we will be focussing on, namely, the LDOS [12].
From now on, we consider a localized impurity on sublat-
tice A, which is simulated by V δm,0. The impurity breaks
the translational invariance of the crystal and defines a natural
origin. The elastic scattering experienced by Bloch wavefunc-
tions on the defect is described within a T-matrix approach.
This consists of a perturbation theory in the impurity poten-
tial V. As shown in Fig 2, for such a localized potential the
scattering diagrams define a geometric series and all the or-
ders can be summed up exactly, regardless of the magnitude
of the impurity potential. After introducing the retarded bare
Green's matrix as G(0)(k, ω) = [ω+i−H(k)]−1, where −1 > 0
describes a finite quasiparticle lifetime, the T-matrix reads
T(ω) = t(ω)
.
(2)
(cid:33)
(cid:32) 1 0
0 0
(cid:82)
Here t(ω) = V [1 − V
AA(k, ω)]−1 does not depend on
wavevector k, due to the integration that runs over the Bril-
louin zone. The correction to the LDOS in the presence of the
impurity is finally obtained as
dk G(0)
(cid:104)
(cid:105)
G(0)(m, ω) T(ω) G(0)(−m, ω)
δρ(m, ω) = − 1
π
Im Tr
(3)
in the limit → 0+. According to Fig. 1, the dispersion re-
lation of the valence band looks the same as the one of the
monatomic crystal, and so do the elastic scattering wavevec-
tors between two time-reversed states −k0 and k0. Therefore,
if one restricts the elastic scattering problem to a spectral anal-
FIG. 2. Diagrammatic representation of the T-matrix within a pertur-
bation theory in the impurity potential V. The oriented lines between
two elastic scattering processes denote the bare Green's functions in
momentum space.
2
FIG. 3. (Color online) Energy-resolved interference pattern induced
in the LDOS of sublattices A (top) and B (bottom) by a localized
impurity. The latter, which is simulated by a potential of V = 1,
belongs to sublattice A and unit cell m = 0. Its position is marked by
the vertical white dashed line. Energy is given in units of hopping t1.
ysis, one would naively expect the localized impurity to in-
duce Friedel oscillations that behave as in Eq. (1) on both sub-
lattices, A and B. The interference patterns obtained from the
numerical evaluation of Eq. (3) for V = 1 and α = 0.9 are
shown in Fig. 3. These patterns are resolved in energy, and
the latter is restricted to positive values because we arbitrarily
focus on the conduction band (1 − α ≤ ω ≤ 1 + α). Whereas
the interferences on sublattice A are symmetric with respect to
the impurity, they turn out to be asymmetric on sublattice B at
low energies. This asymmetry is clearly in disagreement with
the behavior of the Friedel oscillations introduced in Eq. (1),
and it cannot simply be understood from spectral features.
In order to get some insight into this asymmetric inter-
ference pattern, we perform the T-matrix approach analyti-
cally [12]. The LDOS corrections it leads to for the two sub-
lattices read
δρA(m, ω) = V(ω) cos(2k0m)
δρB(m, ω) = V(ω) cos(2k0m + ϕk0) ,
(4)
where m labels the diatomic unit cells from the impurity, k0 is
a pole of G(0)(k, ω) defined by ω2 = E2±(k0) for −π ≤ k0 ≤ 0.
TG(0)G(0)VVVG(0)VVV=+++...-1010m 02ωδρA(m,ω)-11-1010m 02ωδρB(m,ω)-11 3
Thus, if the spectral analysis illustrated in Fig. 1 is sufficient to
understand the 2k0-wavevector oscillations as resulting from
elastic backscattering between time-reversed states k0 and
−k0, it does not explain the existence of the phase shift in the
Friedel oscillations on the pristine sublattice, namely, sublat-
tice B, which yields the asymmetric interferences shown in
Fig. 3. It has to be stressed that this phase shift does not arise
from the condition that the scattering wavefunctions have to
satisfy at the boundary with the impurity, as initially intro-
duced by Friedel for finite size defects [1]. In the case of a
localized impurity, indeed, there is no Friedel phase shift, as
already shown in Eq. (1). The phase shift involved on sublat-
tice B actually arises from the internal degrees of freedom of
the Bloch wavefunctions involved in the elastic scattering. It
explicitly reads
= θk0 − θ−k0
ϕk0
= 2θk0 ,
(5)
where the last equality may be understood as resulting from
time reversal symmetry. It is directly related to θk0, that is, the
phase shift between the two components of the Bloch spinor
of state k0. Importantly, the LDOS corrections on sublattices
A and B are observables; they are for instance accessible in
atomic-scale-resolved STM experiments. So they do not de-
pend on the ambiguity there is in the definition of the diatomic
unit cell. This issue is explicitly fixed in SM [12].
The Fourier analysis of interference patterns is often very
instructive too. For example, it has demonstrated the ability of
STM to probe the Fermi iso-energy contours in nonrelativis-
tic electron gases [10, 11], as well as the absence of backscat-
tering of the massless relativistic charge carriers in graphene,
and at the surfaces of three-dimensional topological insulators
[18–20]. Here, the Fourier transform of the Friedel oscilla-
tions introduced in Eq. (4) leads to Dirac combs
δ(q − 2k0 + n2π)
δρA(q, ω) = V(ω)
δ(q − 2k0 + n2π) e−iϕk0 ,
n=−∞
δρB(q, ω) = V(ω)
(6)
where δ denotes the Dirac delta function, and −π ≤ k0 ≤ +π.
Thus, the Fourier transform is a 4π-periodic function of q [12].
The modulus of the Fourier transform is the same for both sub-
lattices, A and B. Its intensity is maximum for the backscat-
tering wavevectors q = 2k0 [2π]. This can be understood from
the spectral features of the band structure in the absence of
the impurity, as shown by the double arrows in Fig. 1. This
behavior is in agreement with the top panel of the left-hand
column in Fig. 4, which represents the Fourier transform of
the interference pattern of sublattice B, previously depicted in
Fig. 3. It results from the numerical evaluation of the Fourier
transform of the LDOS correction
+∞(cid:88)
+∞(cid:88)
n=−∞
(cid:90)
(cid:90)
i
δρ(q, ω) =
2π
− i
2π
Tr
Tr
(cid:104)
(cid:104)
dk
dk
G(0)(k + q, ω) T(ω) G(0)(k, ω)
G(0)(k, ω) T(ω) G(0)(k + q, ω)
(7)
(cid:105)
(cid:105)∗
FIG. 4. (Color online) Modulus (top) and argument (bottom) of the
Fourier transform of the energy-resolved interference pattern on sub-
lattice B for α < 1 (left) and α > 1 (right). The white dashed lines
mark the wavevectors q = ±2k0 at energy ω.
for the impurity potential V = 1 and α = 0.9. The high
intensity areas agree with the white dashed lines that mark
the Dirac delta functions when the backscattering wavevec-
tors q = 2k0 [2π] described by Eq. (6). Note that only the
Fourier transform for sublattice B is shown in Fig. 4, since the
modulus of the Fourier transform for sublattice A is identical.
The argument of the Fourier transform along the maximum-
intensity lines reveals the phase shift involved in the Friedel
oscillations on sublattice B, according to Eq. (6). It is repre-
sented in the second plot of the left-hand column in Fig. 4.
Note that only one white dashed line is shown in the figure. It
defines a periodic line in (q, ω)-space that we denote by C2k0.
This line corresponds to the wavevectors q = 2k0 depicted by
the blue double arrow in Fig. 1. The Umklapp scattering pro-
cesses associated to the red double arrow would lead to an-
other white dashed line from which we would learn the same
information, so it is not shown. Path C2k0 is a closed path,
along which we can define the following mapping:
ϕ : q ∈ S 1 = [−2π, 2π] (cid:55)→ ϕq/2 ∈ S 1 = [−π, π]
(8)
This mapping supports a topological characterization that in-
dexes equivalence classes referred to as homotopy classes.
They form some groups that are examples of topological in-
variants. As far as we are concerned, the topology of the map-
ping ϕ : S 1 (cid:55)→ S 1 is characterized by the first homotopy group
of spheres, namely, π1(S 1) = Z. This topological invariant is
an integer that counts the number of times that ϕq/2 winds
around the circle S 1 = [−π, π], when scattering wavevector
q runs once along S 1 = [−2π, 2π]. This is nothing but the
-2π2πq 02ω01α<1-2π2πq 02ω01α>1-2π2πq02ω-ππα<1-2π2πq02ω-ππα>1 (cid:90) π
−π
dk
2π
W = 2
(cid:72)
(cid:73)
winding number given by
W =
1
2iπ
dq ∂q ln
C2k0
(cid:34)
(cid:35)
=
(cid:90) π
−π
dq
2π
δρA(q, ω)
δρB(q, ω)
∂q ϕq .
(9)
From the second plot of the left-hand column in Fig. 4, we in-
fer that W = 2. When changing the ratio between intra- and
inter-dimer hoppings to α > 1, one gets the right-hand column
of Fig. 4. It has been obtained for parameters α = 10/9 and
t1 = 0.9, so that the energy spectrum as well as the modulus
of the Fourier transform remain unchanged. The phase of the
Fourier transform along the maximum intensity closed path
C2k0 no longer winds and W = 0. Therefore, the presence of
a localized impurity, which breaks the translational invariance,
induces interference patterns that support nonequivalent topo-
logical characterizations, depending on the global properties
of the geometrical phase shift involved in Friedel oscillations.
= 2θk0
under time-reversal symmetry. So the topological properties
of the interference-pattern Fourier transform are intrinsically
related to the Bloch band structure topology, which is itself
characterized by the winding number W:
Moreover, the geometrical phase shift satisfies ϕk0
∂k θk = 2W .
Topological invariant W is then obviously connected to the
Zak phase of the Bloch wavefunctions in the absence of im-
BZ dk(cid:104)±, k∂k±, k(cid:105), via the following
purity, namely, γ = i
relation: W = 2γ/π. The Zak phase is analogous to the
Berry phase for one-dimensional systems [21] where the the
role of the periodic external parameter is played by the quasi-
momentum running over the 1D Brillouin zone.
It refers
here to the gauge-invariant geometrical phase picked up by
the Bloch wavefunctions along the Brillouin zone. This is a
crucial quantity involved in many fields of physics, among
which charge pumping, electric polarization, orbital mag-
netism, symmetry-protected topological order and edge states
[22–27]. It must be stressed that the value of such a phase
depends on the choice of origin in the Fourier transform for
sublattice B, or equivalently on the ambiguity there is in the
definition of the unit cell. Indeed, since the definition of θk
depends on the unit cell convention we choose, so does the
winding number W it leads to. Despite this ambiguity, the dif-
ference of winding numbers W(α > 1) − W(α < 1) does not
depend on this choice and is a well-defined quantity. This is
actually a well-known issue, and it explains for example why
the polarization in a crystal, which depends on the Zak phase
of Bloch wavefunction, is only defined modulo a quantum of
polarization [23, 24]. A fortiori, only W(α > 1) − W(α < 1)
is well-defined and enables the distinction between the Four-
rier transform of two topologically nonequivalent interference
patterns, as the ones of Fig. 4.
In summary, we have addressed the scattering problem of
a localized impurity in a one-dimesional crystal for Bloch
waves that possess internal degrees of freedom. While the im-
purity obviously yields Friedel oscillations in the LDOS asso-
ciated to backscattering wavevector q = 2k0, we have shown
4
that the internal freedom degrees of Bloch waves are respon-
sible for a geometrical phase shift. The latter does not relate
to the nature of the impurity and is then intrinsically different
from the so-called Friedel phase shift. The Fourier transform
of the energy-resolved interference pattern has revealed the
momentum dependence of this geometrical phase shift, whose
global properties enable us to discriminate two topologically
nonequivalent interference patterns. Remarkably, these topo-
logical features are intrinsically connected to the Zak phase
under-space and time-inversion symmetries, which character-
izes the Bloch band structure topology in the absence of impu-
rity. Measurements of the Zak phase have already been real-
ized, for example through Bloch oscillations [14] and in non-
Hermitian systems with losses [16, 28], but these prescriptions
remain rather unsuitable for electronic compounds. Since the
LDOS is a physical observable that is accessible in acoustic
and photonic crystals, ultracold atomic gases, and electronic
materials via STM, the interference pattern induced by a local-
ized defect offers a priori a joint route to image the band struc-
ture topology. Besides, this consists of a bulk measurement
since it probes Bloch bands properties. Above, we have in-
deed focused on elastic scattering occurring in the conduction
band of a one-dimensional insulator. A strong impurity po-
tential V (cid:29) 1 would be responsible for a symmetry-protected
zero-energy edge state exponentially localized on one or the
other side of the defect, depending on the Zak phase of the
Bloch wavefunctions. Because the prescription we propose
to probe the Zak phase is resolved in energy, it should then
be possible to probe both the topological properties of Bloch
bands, as well as the existence of zero-energy edge states they
lead to within the band gap. This would offer a unique op-
portunity to observe the bulk-edge correspondence in a single
experiment.
The authors are very grateful to D. Carpentier for stimu-
lating discussions. This work was supported by the French
Agence Nationale de la Recherche (ANR) under grant Topo-
Dyn (ANR-14-ACHN-0031).
[1] J. Friedel, Phil. Mag. 43, 153 (1952).
[2] M. A. Ruderman and C. Kittel, Phys. Rev. 96, 99 (1954).
[3] T. Kasuya, Progress of theoretical physics 16, 45 (1956).
[4] K. Yosida, Phys. Rev. 106, 893 (1957).
[5] A. Fert and P. M. Levy, Phys. Rev. Lett. 44, 1538 (1980).
[6] S. K. Adhikari, American Journal of Physics 54, 362 (1986).
[7] V. E. Barlette, M. M. Leite, and S. K. Adhikari, Eur. J. Phys.
[8] C. Dutreix and M. Katsnelson, Phys. Rev. B 93, 035413 (2016).
[9] M. F. Crommie, C. P. Lutz, and D. M. Eigler, Nature 363, 524
21, 435 (2000).
(1993).
[10] P. T. Sprunger, L. Petersen, E. W. Plummer, E. Laegsgaard, and
F. Besenbacher, Science 275, 1764 (1997).
[11] L. Petersen, P. T. Sprunger, P. Hofmann, E. Laegsgaard, B. G.
Briner, M. Doering, H.-P. Rust, A. M. Bradshaw, F. Besen-
bacher, and E. W. Plummer, Phys. Rev. B 57, R6858 (1998).
[12] C. Dutreix and P. Delplace, Supplemental Material.
5
[13] W. P. Su, J. R. Schrieffer, and A. J. Heeger, Phys. Rev. Lett. 42,
1698 (1979).
[14] M. Atala, M. Aidelsburger, J. T. Barreiro, D. Abanin, T. Kita-
gawa, E. Demler, and I. Bloch, Nature Physics 9, 795 (2013).
[15] M. Xiao, G. Ma, Z. Yang, P. Sheng, Z. Zhang, and C. T. Chan,
Nature Physics 11, 240 (2015).
[16] J. M. Zeuner, M. C. Rechtsman, Y. Plotnik, Y. Lumer, S. Nolte,
M. S. Rudner, M. Segev, and A. Szameit, Phys. Rev. Lett. 115,
040402 (2015).
[17] C. Poli, M. Bellec, U. Kuhl, F. Mortessagne, and H. Schome-
rus, Nature Communications 6 (2015).
[18] I. Brihuega, P. Mallet, C. Bena, S. Bose, C. Michaelis, L. Vitali,
F. Varchon, L. Magaud, K. Kern, and J. Y. Veuillen, Phys. Rev.
Lett. 101, 206802 (2008).
[19] P. Roushan, J. Seo, C. V. Parker, Y. S. Hor, D. Hsieh, D. Qian,
A. Richardella, M. Z. Hasan, R. J. Cava, and A. Yazdani, Na-
ture 460, 1106 (2009).
[20] Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil,
D. Grauer, Y. Hor, R. Cava, et al., Nature Physics 5, 398 (2009).
[21] J. Zak, Phys. Rev. Lett. 62, 2747 (1989).
[22] D. Thouless, Phys. Rev. B 27, 6083 (1983).
[23] R. King-Smith and D. Vanderbilt, Phys. Rev. B 47, 1651 (1993).
[24] R. Resta, Rev. Mod. Phys. 66, 899 (1994).
[25] A. Raoux, M. Morigi, J.-N. Fuchs, F. Pi´echon, and G. Mon-
tambaux, Phys. Rev. Lett. 112, 026402 (2014).
[26] A. P. Schnyder, S. Ryu, A. Furusaki, and A. W. Ludwig, Phys.
[27] P. Delplace, D. Ullmo, and G. Montambaux, Phys. Rev. B 84,
Rev. B 78, 195125 (2008).
195452 (2011).
[28] M. Rudner and L. Levitov, Phys. Rev. Lett. 102, 065703 (2009).
SUPPLEMENTAL MATERIAL FOR "GEOMETRICAL PHASE SHIFT IN FRIEDEL OSCILLATIONS"
Friedel oscillations for N = 2
This SM section details the derivations of the Friedel oscillations induced in the local density of states, as introduced in Eq. (1)
and Eq. (4) in the main text.
6
Retarded bare Green's matrix
Within a two-band nearest-neighbor tight-binding description, the off-diagonal component of the bare Green's matrix may be
written as
(cid:90) +π
(cid:90) +π
(cid:73)
−π
−π
C
dk
2π
dk
2π
dz
2iπ
(α + eik) eikm
ω2 − E2±(k)
(α + eik) eikm
ω2 − α + eik2
(α + eik) zm
P(z)
,
G(0)
BA(m, ω) =
=
=
(10)
(11)
(12)
where it is assumed that m ≥ 0, z = eik, P(z) = −α z2 + (ω2 − 1− α2) z− α, C denotes the unit circle, and energy is given in units
of hopping amplitude t1. As we are interested in probing the bulk energy bands, which implies (1 − α)2 ≤ ω2 ≤ (1 + α)2, there
are two complex roots for polynomial P, namely,
(cid:112)(cid:2)(1 + α)2 − ω2(cid:3)(cid:2)ω2 − (1 − α)2(cid:3)
ω2 − 1 − α2 ± i
z± =
(13)
These roots satisfy z± = 1. Nevertheless, we have to consider a finite quasiparticle lifetime, which is achieved by adding a
small imaginary part i to the frequency ω. Moreover, we assume > 0 to work with the retarded Green function. Thus, z+ > 1
and z− is the only pole that remains inside the unit circle. It is simply denoted z0 = eik0 from now on. Since z0 has a negative
imaginary part, this implies −π < k0 < 0. Therefore, in the limit → 0+ the bare Green's function is given by
2α
.
BA(m, ω) = − i
G(0)
2vk0
eik0m+iθk0
(14)
= −α sin(k0) ω−1. For simplicity we focus
where we have used that θk0
on the conduction bands (ω ≥ 0) from now on. Besides, we have to be careful with the sign of m which has been assumed to be
positive so far. When m < 0, then we can use the variable change z = e−ik, which straightforwardly leads to
= Arg[α + eik0], and ω2 = α + eik02, so that vk0
dk k0
= dω
The other off-diagonal component of the bare Green's matrix is obtained in the same way. This results in
BA(±m, ω) = − i
G(0)
2vk0
eik0m+iθ±k0 .
AB(±m, ω) = − i
G(0)
2vk0
eik0m−iθ±k0 .
(15)
(16)
When doing the substitution α + eik ↔ ω in the numerator of Eq. (10), we immediately obtain the real-space representation of
the diagonal component of the bare Green's matrix, that is
AA(±m, ω) = G(0)
G(0)
BB(±m, ω) = − i
2vk0
eik0m
.
(17)
Note finally that this latter expression does not depend on wether there is one or several atoms per unit cell, so that the LDOS
correction δρA(m, ω) it leads to will be the same for the monatomic and diatomic pattern crystals.
T-matrix appraoch
(cid:33)
(cid:32) 1 0
0 0
,
T(ω) = t(ω)
7
(18)
The T-matrix satisfies
(cid:82)
(cid:112)
where t(ω) = V [1 − V
zone. From the real-space expression of the bare Green's functions introduced above, this can be rewritten as
AA(k, ω)]−1 does not depend on wavevector k, due to the integration that runs over the Brillouin
dk G(0)
t(ω) =
V
1 − VG(0)
AA(0, ω)
= −i
2vk0V
(2vk0)2 + V2
(cid:112)
eiτk0 ,
(19)
where τk0
imaginary part of the following matrix product: G(0)(m, ω)T(ω)G(0)(−m, ω). It finally behaves as
(2vk0)2 + V2]. The variation of local density of states on both sublattices is then obtained as the
= Arg[(V + i2vk0)/
δρA(m, ω) = V(ω) cos(2k0m ± τk0)
δρB(m, ω) = V(ω) cos(2k0m ± τk0
+ ϕk0) .
where the sign "±" refers to the positive and negative values of m, ϕk0
V
= θk0 − θ−k0 and we have defined
(cid:112)
1
2vk0
V(ω) =
.
(2vk0)2 + V2
(20)
(21)
As shown in Fig. 5 for α = 0.9 and V = 1, these analytical expressions of Friedel oscillations are in agreement with the numerical
evaluation of the LDOS correction. They describe interferences that are symmetric with respect to the impurity site on sublattice
A, and asymmetric on sublattice B due to the phase shift ϕk0.
Importantly, the T-matrix, which does not depend on space coordinates, has two contributions. On the one hand, it modulates
(2vk0)2 + V2].
the amplitudes of Friedel oscillations. On the other hand, it is responsible for the phase shift τk0
= Arg[(V+i2vk0)/
(cid:112)
FIG. 5. (Color online) Energy-resolved interference patterns in the LDOS on sublattice A (top) and sublattice B (bottom) obtained numerically
(left) and analytically (right). Only the scattering occurring in the conduction band is shown, i.e., 1 − α ≤ ω ≤ 1 + α where α = 0.9. The
vertical white dashed line marks the site of the impurity that belongs to sublattice A and unit cell m = 0. The impurity potential is simulated
by V = 1. Energy is given in units of the hopping amplitude t1.
-1010m 02ω-11-1010m 02ω-11-1010m 02ω-11-1010m 02ω-11 (cid:112)
8
This phase shift is obviously bounded (i.e. can be chosen as monovalued), since (V + i2vk0)/
(2vk0)2 + V2 cannot wind around
the complex plane origin when varying k0. As we are interested in the global geometrical properties of the phase shifts in Friedel
oscillations, it is sufficient to consider that the LDOS correction is given by
δρA(m, ω) =
cos(2k0m)
1
2vk0
1
2vk0
δρB(m, ω) =
cos(2k0m + ϕk0)
(22)
in real space. These expressions actually correspond to the limits of strong impurity potential (V (cid:29) 1) or low energies (k0 ∼
±π) in which τk0 vanishes. They already describe the 2k0-wavevector Friedel oscillations in the LDOS, as well as the global
geometrical properties of the phase shift ϕk0, which are the two universal behaviors that the main text aims to describe. Therefore,
the expressions provided in Eq. (22) are the ones discussed in the main text. Note that they are discussed with respect to
numerical evaluations of the LDOS correction for V = 1 in the main text, which does not fall into the limits V (cid:29) 1 nor k0 ∼ ±π.
Nonetheless, they show a very good agreement with each other, which confirms that the expressions in Eq. (22) already describes
universal behaviors of Friedel oscillations.
Ambiguity in the unit cell definition
Here, we would like to point out an ambiguity in the definition of the unit cell. Fig. 6 depicts two copies of a dimerized crystal
in the presence of a localized impurity. The latter fixes a natural origin, so that the impurity site unambiguously belongs to the
unit cell m = 0 of sublattice A. In order to define the diatomic pattern, we then have to chose one the two nearest-neighbor sites as
belonging to the unit cell m = 0. This choice leads to an ambiguity in the definition of the unit cell, hence the two configurations
illustrated in the figure. Of course, the Friedel oscillations as introduced in Eq. (22) appear through an observable, namely, the
LDOS, and they cannot depend on this choice of unit cell.
This can also be understood explicitly. The top and bottom configurations in Fig. 6 respectively correspond to the following
Bloch Hamiltonian matrices:
(cid:32)
(cid:33)
(cid:32)
H(1)(k) =
0
α + eik
α + e−ik
0
and H(2)(k) =
0
e−ik(α + eik)
eik(α + e−ik)
0
.
(23)
(cid:33)
After reproducing the derivations of the bare Green's functions introduced above, we end up with the following expressions for
the Friedel oscillations on sublattice B:
(cid:104)
(cid:105)
(cid:105)
B (±m, ω) ∝ cos(2k0m ± 2θ(1)
δρ(1)
k0
e−ik0(α + eik0)
and θ(2)
k0
= Arg
(cid:104)
)
where θ(1)
k0
θ(2)
= θ(1)
k0
k0
α + eik0
= Arg
− k0, so that the LDOS correction on sublattice B can be rewritten as
and
B (±m, ω) ∝ cos(2k0m ± 2θ(2)
δρ(2)
k0
) ,
(24)
. The two geometrical phase shifts are then related to one another via
B (±m, ω) ∝ cos(2k0m ± 2θ(1)
δρ(1)
k0
)
and
B (±m, ω) ∝ cos(2k0(m ∓ 1) ± 2θ(1)
δρ(2)
k0
) .
(25)
FIG. 6. (Color online) Illustration of the two possible definitions of the unit cell. The site of the impurity (grey square) unambiguously belongs
to the site A (blue disk) of the unit cell m = 0. Then, there are two nearest-neighbor sites B (red disks) and we have to pick one of them to
obtain the diatomic pattern of the unit cell, which leads to the two configurations depicted in the figure.
As it can be seen from these expressions, the Friedel oscillations in the LDOS are the same on every physical site and does not
depend on the choice we made to label the unit cell. For example, the site B of unit cell m = 0 in the top configuration of Fig. 6,
corresponds to the site B of unit cell m = 1 in the bottom configuration of Fig. 6. The LDOS correction associated to this site is
unambiguously given by
9
(26)
Besides, the site B of unit cell m = −1 in the top configuration of Fig. 6, corresponds to the site B of unit cell m = 0 in the bottom
configuration of Fig. 6. The LDOS correction associated to this site is unambiguously given by
) .
δρ(1)
B (0, ω) = δρ(2)
k0
B (+1, ω) ∝ cos(2θ(1)
B (−1, ω) = δρ(2)
δρ(1)
B (0, ω) ∝ cos(2θ(2)
k0
) .
(27)
Consequently, the interference pattern we describe, namely the Friedel oscillations in the observable LDOS, does not depend on
the way we define the unit cell.
Fourier transform of Friedel oscillations
The Friedel oscillations on sublattice B described by the general expression in Eq. (20) satisfies
that we have introduced a normalized summation over n, so that it satisfies(cid:80)
where −π ≤ k0 ≤ 0, and we have used the fact that z0 = eik0 lies inside the unit circle, before considering the limit → 0. Note
= −τk0, this can be rewritten as
n = 1. Since τ−k0
+ n2π)
e−iϕk0 ,
(28)
where now −π ≤ k0 ≤ π and δρB(q, ω) is a 4π-periodic function of q. For sublattice A, this straightforwardly leads to
(29)
(30)
m>0
(cid:88)
(cid:88)
(cid:88)
(cid:88)
m<0
m>0
n=−∞
m>0
δρB(q, ω) =V(ω)
+V(ω)
=V(ω)
+V(ω)
=V(ω)
+V(ω)
=V(ω)
+V(ω)
=V(ω)
n=−∞
n=−∞
n=−∞
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
+∞(cid:88)
n=−∞
n=−∞
n=−∞
n=−∞
n=−∞
ei(2k0+q+n2π)m eiϕk0 eiτk0 + e−i(2k0−q+n2π)m e−iϕk0 e−iτk0
ei(2k0+q+n2π)m eiϕk0 e−iτk0 + e−i(2k0−q+n2π)m e−iϕk0 eiτk0
ei(2k0+q+n2π)m eiϕk0 eiτk0 + e−i(2k0−q+n2π)m e−iϕk0 e−iτk0
e−i(2k0+q+n2π)m eiϕk0 e−iτk0 + e+i(2k0−q+n2π)m e−iϕk0 eiτk0
1
1 − e−i(2k0−q+n2π) e−iϕk0 e−iτk0
1 − ei(2k0−q+n2π) e−iϕk0 eiτk0
1 − ei(2k0−q+n2π)
1
1
1 − ei(2k0+q+n2π) eiϕk0 eiτk0 +
1 − e−i(2k0+q+n2π) eiϕk0 e−iτk0 +
1
1 − e−i(2k0+q+n2π)
1 − cos(2k0 + q + n2π)
1 − ei(2k0+q+n2π)
1 − cos(2k0 + q + n2π)
cos(τk0) − cos(2k0 + q − τk0
1 − cos(2k0 + q + n2π)
eiϕk0 eiτk0 +
eiϕk0 e−iτk0 +
+ n2π)
e−iϕk0 e−iτk0
+n2π
1 − cos(2k0 − q + n2π)
1 − e−i(2k0−q+n2π)
1 − cos(2k0 − q + n2π)
e−iϕk0 eiτk0
cos(τk0) − cos(2k0 − q − τk0
1 − cos(2k0 − q + n2π)
eiϕk0 +
δρB(q, ω) =V(ω)
cos(τk0) − cos(2k0 − q − τk0
1 − cos(2k0 − q + n2π)
+ n2π)
e−iϕk0 ,
δρA(q, ω) =V(ω)
cos(τk0) − cos(2k0 − q − τk0
1 − cos(2k0 − q + n2π)
+ n2π)
.
+∞(cid:88)
n=−∞
+∞(cid:88)
n=−∞
The Fourier transform of the Friedel oscillations introduced in Eq. (22) is given by
10
(31)
+∞(cid:88)
+∞(cid:88)
n=−∞
where −π ≤ k0 ≤ 0. This subsequently reduces to
δρB(q, ω) = V(ω)
δρA(q, ω) = V(ω)
n=−∞
[δ(q + 2k0 + n2π) + δ(q − 2k0 + n2π)]
[δ(q + 2k0 + n2π) e+iϕk0 + δ(q − 2k0 + n2π) e−iϕk0 ] ,
δρA(q, ω) = V(ω)
δ(q − 2k0 + n2π)
+∞(cid:88)
+∞(cid:88)
n=−∞
(32)
where now −π ≤ k0 ≤ π, so that −2π ≤ q ≤ 2π. Note once again that this behavior in reciprocal space agrees with the one
described in Eq. (30). The modulus is maximum for backscattering wavevectors q = 2k0 [2π], while the argument yields to the
phase shift ϕk0. The expression above is the one mentioned in the main text in Eq. (6).
δρB(q, ω) = V(ω)
n=−∞
δ(q − 2k0 + n2π) e−iϕk0 .
Generalization to N internal degrees of freedom
Band structure under Chiral symmetry
So far we have focused on the interference pattern induced in the LDOS when there are two sublattice degrees of freedom.
It shows that, in the presence of space- and time-inversion symmetries, the interference pattern Fourier transform exhibits topo-
logical properties that are intrinsically related to the winding number characterizing the one-dimensional Bloch band structure.
This relies on the space- and time-inversion symmetries, which prevents any mass term scaling with σ3 in the two-band descrip-
tion. Since we disregard the processes scaling with the identity matrix σ0, for they do not change the Bloch eigenstates, nor the
topological properties they involve, our description relied on a bipartite Hamiltonian that had chiral symmetry. The Bloch band
structure it is associated to then belongs to a chiral symmetry class, and the topological features it may exhibit are characterized
by a winding number.
From now on, we consider a Bloch Hamiltonian matrix, namely H(k), that satisfies a chiral symmetry: Γ†H(k)Γ = −H(k),
where the chiral operator Γ is unitary and squares to plus identity. The chiral symmetry requires the eigenstates of H(k), namely
n(k)(cid:105), to come in pairs with opposite energies:
H(k)n(k)(cid:105) = En(k)n(k)(cid:105)
H(k) Γn(k)(cid:105) = −En(k) Γn(k)(cid:105) .
(33)
This obviously yields a particle-hole symmetric spectrum that we assumed to be gapped, i.e., En(k) (cid:44) 0 for all k and n. Thus, there
is an even number of energy bands, and we generically denote it 2N, where N is a natural number. Besides, we assume without
loss of generality that the eigenstates n(k)(cid:105) (respectively Γn(k)(cid:105)) are normalized and associated to the negative (respectively
positive) energy bands sorted in the ascending (respectively descending) order according to index n ∈ [1··· N]. Second, the
chiral-conjugate eigenspaces are orthogonal to each other: (cid:104)n(k)Γn(k)(cid:105) = 0 for every n. Since Γ2 = +1, the chiral operator has
two orthogonal subspaces of normalized states that have opposite chiralities:
An(k)(cid:105) =
Bn(k)(cid:105) =
√
n(k)(cid:105) + Γn(k)(cid:105)
n(k)(cid:105) − Γn(k)(cid:105)
2
√
with
ΓAn(k)(cid:105) = +An(k)(cid:105) ,
ΓBn(k)(cid:105) = −Bn(k)(cid:105) .
(34)
In particular, chiral operator Γ supports a diagonal matrix representation of the form Γ = IN ⊗ σ3, where IN denote the N × N
identity matrix and σz is the third Pauli matrix. For such a representation, the anticommutation relation that defines the chiral
symmetry requires the Bloch Hamiltonian matrix to be off-diagonal:
with
2
(cid:32)
(cid:33)
H(k) =
0
F†(k)
F(k)
0
.
(35)
11
In the basis {A1(cid:105)···AN(cid:105),B1(cid:105)···BN(cid:105)}, the off-diagonal block F(k) becomes diagonal, provided all energy bands En(k) are non-
degenerate. Otherwise it becomes trigonal, but it would not change the topological properties we aim to highlight here, since
they relie on the assumption that there exists a gap around the zero-energy level. It reads
F(k) =
E1(k) e−iθ1(k)
0
...
0
0 ···
. . .
. . .
. . .
. . .
···
0 EN(k) e−iθN(k)
0
...
0
.
(cid:73)
∇k ln
dk
2iπ
BZ
N(cid:89)
n=1
Det F†(k)
Det F†(k) ,
N(cid:88)
i
n=1
(cid:73)
.
eiθn(k) = exp
θn(k)
Det F†(k)
Det F†(k) =
N(cid:88)
n=1
W =
Wn where Wn =
∇kθn(k) .
dk
2π
BZ
(36)
(37)
(38)
(39)
In one dimension, the winding number that characterizes the first homotopy group of spheres of the Bloch band structure, namely
Π1(S 1) = Z, can be defined as
where
W =
The expression of the winding number finally reduces to
It clearly appears through this expression that the winding number may become ill-defined if the assumption En(k) (cid:44) 0 is relaxed.
Real-space representation of the bare Green's functions
The retarded bare Green's function can then be introduced as
G(0)(k, ω) =[ω − H(k)]−1
n=1
2N(cid:88)
N(cid:88)
N(cid:88)
n=1
n=1
=
=
=
n(k)(cid:105)(cid:104)n(k)
(cid:34)n(k)(cid:105)(cid:104)n(k)
ω − En(k)
(cid:34)
ω − En(k)
ω
ω2 − E2
n(k)
(cid:35)
Γn(k)(cid:105)(cid:104)n(k)Γ†
ω + En(k)
+
(An(cid:105)(cid:104)An + Bn(cid:105)(cid:104)Bn) +
En(k)
ω2 − E2
n(k)
eiθn(k) An(cid:105)(cid:104)Bn + e−iθn(k) Bn(cid:105)(cid:104)An(cid:17)(cid:35)
(cid:16)
.
(40)
In the expression above, it has been used that An(k)(cid:105) = eiθA
n (k) is the
phase shift between the freedom degrees of opposite chiralities for the nth energy band. Note that the chiral symmetry requires
the Green's function to satisfy the following relation: Γ†G(0)(k, ω)Γ = −G(0)(k,−ω). The matrix representation of the Green's
function consists of uncoupled 2 × 2 blocks. Therefore, we can use the derivations already done in the previous sections of this
Supplemental Material, and the Green's function can be written as
n (k) Bn(cid:105), so that θn(k) = θA
n (k) An(cid:105) and Bn(k)(cid:105) = eiθB
n (k) − θB
(cid:104)An(cid:105)(cid:104)An + Bn(cid:105)(cid:104)Bn + eiθn(k0) An(cid:105)(cid:104)Bn + e−iθn(k0) Bn(cid:105)(cid:104)An(cid:105)
,
(41)
G(0)(m, ω) =ei2k0m
N(cid:88)
n=1
δ(ω ± En(k0))
2ivn(k0)
where m > 0, time-reversal symmetry requires the spectrum to satisfy En(k) = En(−k), vn(k0) = ∂kEn(k0), and k0 is assumed to
be a pole satisfying ω = ±En(k0) and eik0 = 1. Of course, this pole depends on the band index n, but we omit it for more clarity.
Here, a few remarks are in order about the Green's function expression above.
• The poles satisfying eikα < 1 do not yield any long-range contribution, since they lead to exponential decays with the
distance to the impurity, so they are disregarded.
12
• The poles satisfying eikα = 1 are assumed to be simple poles. They could be poles of higher orders, but it is always
possible to make them simple pole by adiabatically varying the model parameters (e.g. hopping amplitudes), as long as
the zero-energy gap does not close. This procedure does not change the winding number of the Bloch band structure W,
nor the topological property of the geometrical phase shift we aim to highlight in the Friedel oscillations.
• There may be several simple poles satisfying eikα = 1. Nevertheless, we can still consider continuously deforming the
spectrum by tuning adiabatically the model parameters without closing the zero-energy gap, in such a way that each energy
band becomes a monotonic function of the momentum for 0 ≤ k ≤ π. This would bring us to a spectrum similar to the one
discussed in the main text with only one simple pole k0.
Friedel oscillations in the LDOS
Let us consider a localized potential in real space such that it leads to the following representation of the T-matrix in momentum
space:
N(cid:88)
T(ω) =
tn(ω)An(cid:105)(cid:104)An .
where
n=1
tn(ω) = −i
(cid:112)
2vn(k0)Vn
(2vn(k0))2 + V2
n
eiτn(k0) ,
(cid:112)
(42)
(43)
(44)
where Vn is the potential experienced by the eigenstates of the nth band, and τn(k0) = Arg[(Vn + i2vn(k0))/
(2vn(k0))2 + V2
n ].
The T-matrix does not depend on k because the impurity is localized in real space. This leads to the following LDOS correction
δρA(m, ω) =
δρA,n(m, ω) =
N(cid:88)
N(cid:88)
n=1
cos(2k0m + τn(k0)) δ(cid:0)ω + En(k0)(cid:1)
cos(2k0m + τn(k0) + ϕn(k0)) δ(cid:0)ω + En(k0)(cid:1) ,
N(cid:88)
N(cid:88)
n=1
n=1
δρB(m, ω) =
δρB,n(m, ω) =
bands (i.e., there is no term with δ(cid:0)ω − En(k0)(cid:1)), and
n=1
where ϕn(k0) = θn(k0) − θn(−k0) = 2θn(k0) under time-reversal symmetry. Besides, we have only considered the conduction
Vn(ω) =
Vn
2vn(k0)
(cid:112)
1
(2vn(k0))2 + V2
n
.
The energy-resolved interference pattern in momentum space behaves similarly to
cos(τk0) − cos(2k0 − q − τk0
1 − cos(2k0 − q + p2π)
cos(τk0) − cos(2k0 − q − τk0
1 − cos(2k0 − q + p2π)
δρA,n(q, ω) =
δρB,n(q, ω) =
δρB(q, ω) =
δρA(q, ω) =
Vn(ω)
Vn(ω)
p=−∞
N(cid:88)
N(cid:88)
n=1
N(cid:88)
N(cid:88)
n=1
+∞(cid:88)
+∞(cid:88)
p=−∞
n=1
n=1
+ p2π)
+ p2π)
δ(cid:0)ω + En(k0)(cid:1)
e−iϕn(k0) δ(cid:0)ω + En(k0)(cid:1) .
(45)
(46)
When moving along the q-periodic paths Cn defined by the constraint q = 2k0 within each energy band En, we finally access:
(cid:73)
N(cid:88)
n=1
Cn
(cid:34) δρA,n(q, ω)
(cid:35)
δρB,n(q, ω)
=
(cid:73)
N(cid:88)
n=1
Cn
dq
2iπ
∂q ln
(cid:73)
N(cid:88)
n=1
Cn
N(cid:88)
n=1
dq
2π
∂q ϕn(q/2) = 2
dq
2π
∂q θn(q) = 2
Wn = 2W .
(47)
|
1305.0314 | 2 | 1305 | 2013-07-26T22:41:05 | Power spectrum of electronic heat current fluctuations | [
"cond-mat.mes-hall"
] | We analyze the fluctuations of an electronic thermal current across an idealized molecular junction. The focus here will be on the spectral features of the resulting heat fluctuations. By use of the Green functionmethod we derive an explicit expression for the frequency-dependent power spectral density of the emerging energy fluctuations. The complex expression simplifies considerably in the limit of zero frequency, yielding the noise intensity of the heat current. The spectral density for the electronic heat fluctuations still depends on the frequency in the zero-temperature limit, assuming different asymptotic behaviours in the low- and high-frequency regions. We further address subtleties and open problems from an experimental viewpoint for measurements of frequency-dependent power spectral densities. | cond-mat.mes-hall | cond-mat | physica status solidi
Power spectrum of electronic heat
current fluctuations
Fei Zhan1,2, Sergey Denisov1, and Peter Hanggi*1,3
3
1
0
2
l
u
J
6
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
4
1
3
0
.
5
0
3
1
:
v
i
X
r
a
1 Institut fur Physik, Universitat Augsburg, Universitatsstr. 1, D-86159 Augsburg, Germany
2 Centre for Engineered Quantum Systems, School of Mathematics and Physics, The University of Queensland, St Lucia QLD 4072,
Australia
3 Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117546,
Singapore
Received XXXX, revised XXXX, accepted XXXX
Published online XXXX
Key words: molecular junction, heat current fluctuation, power spectral density
∗ Corresponding author: e-mail: hanggi@physik.uni-augsburg.de, Phone: +49-821-5983249, Fax: +49-821-5983222
We analyze the fluctuations of an electronic thermal cur-
rent across an idealized molecular junction. The focus
here will be on the spectral features of the resulting heat
fluctuations. By use of the Green function method we de-
rive an explicit expression for the frequency-dependent
power spectral density of the emerging energy fluctua-
tions. The complex expression simplifies considerably
in the limit of zero frequency, yielding the noise inten-
sity of the heat current. The spectral density for the elec-
tronic heat fluctuations still depends on the frequency
in the zero-temperature limit, assuming different asymp-
totic behaviors in the low- and high-frequency regions.
We further address subtleties and open problems from an
experimental viewpoint for measurements of frequency-
dependent power spectral densities
.
ε0
Gate
TL
TR
(Color online) Sketch of a molecular junction setup used in the
text. The average heat flow is generated by electrons moving
from a hot electrode TL across the molecular junction towards
a neighboring cold electrode TR. The inter-electrode electronic
level ε0 can be tuned continuously.
Copyright line will be provided by the publisher
1 Introduction The experimental activities over the
last fifteen years in investigating electronic transport across
molecular junctions [1,2,3] have triggered several waves
of intense research in theory [4,5,6,7,8] and experiment
[10,11,12,13]. Single molecule electronics is still con-
sidered as a promising candidate for the substitution of
silicon-based elements in the information processing tech-
nology [2,3,10,11]. Likewise, molecular junctions have
advantages in the context of energy-related applications.
This is due to the potential of hybrid solid-state molecular
structures which enable novel interface features. Moreover,
the abundant selection of possible molecules and electrode
materials allow to tailor specific properties. In particular,
the topic of thermoelectric [8] and photovoltaic [9] conver-
sion processes continue to prompt timely research in the
field of molecular electronics.
Apart from the standard current-voltage characteris-
tics [1,12,13], it is also important to obtain insight into
the fluctuations that accompany the corresponding trans-
port processes. For example, by use of the full counting
statistics [14,15,16,17] it is possible to extract information
about the fluctuations of the electric current flowing across
a molecular wire [18,19,20,21,22].
Copyright line will be provided by the publisher
2
First author et al.: Short title
In the context of thermoelectric applications, the issue
of energy transport through molecular junctions and the
properties of the corresponding fluctuations acquire spe-
cial importance. Thermal fluctuations may crucially impact
the electronic transport features, and even affect the overall
performance of the molecular junction. With the molecular
systems operating on the nanoscale corresponding energy
current fluctuations can become sizable. This may be so
even in situations where the average energy current is van-
ishing identically, as it is the case in thermal equilibrium
with both interconnecting electrodes held at the same tem-
perature. Moreover, the properties of nonequilibrium noise
correlations, or likewise, its frequency-dependent spectral
properties, are in no obvious manner related to the mean
value of the energy flow itself. With this work we shall
explore the fluctuations of the heat current caused by the
transferring electrons. Our goal is to obtain analytical es-
timates for the power spectral density (PSD) of the heat
fluctuations, even at the expense that these may mainly ap-
ply to idealized setups only. With such a restriction these
analytical results may nevertheless be useful to appraise
the role of heat current noise in more realistic molecular
junctions. It is further of interest to have an estimate avail-
able when devising molecular circuitry for more complex
tasks.
Energy transport across a molecular structure which
links two electrodes is induced by a difference of the two
electrode temperatures, see in Fig. 1. The physics of heat
transfer generally involves both electrons and phonons and
their mutual interaction [8,23,25,27,28,29,30,31,32,33,
34]. Therefore, the amount of energy flow carried across
the wire should be addressed with care, with the need
to distinguish between energy transfer mediated either by
electrons or phonons, or a combination of both. If phonons
are mainly at work this situation relates to the new field
of phononics [35], a novel research area which may lead
to new circuit elements, such as molecular thermal diodes,
thermal transistors, thermal logic gates, to name but a few
[35,36,37,38,39,40,41]. Then, the size of fluctuations in
heat current does matter; this is so because those may well
turn out to be deleterious to intended information process-
ing tasks.
Heat transport mediated by electrons relates at the same
time to charge transfer: electrons moving from lead-to-lead
carry not only charge but also energy [24,25,26]. How-
ever, the amount of energy transferred by a single elec-
tron, unlike to its charge, is not quantized [42]. In con-
trast to those studies that examine the average heat flow,
however, much less attention has been paid to the issue of
fluctuations of the accompanying flow of energy. In prior
work [43] the energy transport through a ballistic quan-
tum wire has been considered in the Luttinger-liquid limit,
by neglecting the discreteness of the wire's energy spec-
trum. Likewise, with Refs. [44], the PSD of the heat current
fluctuations has been derived within a scattering theory ap-
proach, using the assumption that the electrons are trans-
Copyright line will be provided by the publisher
mitted (reflected) at the same rate, independently of their
actual energies. The results of the last two papers, how-
ever, are challenging because it has been shown therein that
the noise characteristics of heat current at equilibrium ex-
hibits a well-pronounced frequency dependence even at ab-
solute zero-temperature. Therefore, this very zero temper-
ature finding is in contradiction with the naive expectation
as provided by the equilibrium fluctuation-dissipation the-
orem (FDT). This found deviation from the FDT in those
works is attributed loosely to the role of zero-point-energy
fluctuations [44].
With this work we shall consider the electronic energy
current that proceeds across a molecular wire composed of
a single energy level with the two electrodes held at differ-
ent temperatures. A preliminary short discussion of such
electronic nonequilibrium heat noise has been presented
by us with Ref. [45]. Here, we complement and extend
this study and present further useful details on the theoret-
ical derivation of the noise expression. Moreover, we dis-
cuss the nonequilibrium heat noise of the corresponding
heat current over much broader parameter regimes and fre-
quency regimes away from the zero-frequency limit. With
our setup we also corroborate the results obtained in the
zero temperature limit for the power spectral density at fi-
nite frequencies for a different setup in Ref. [44]. In addi-
tion, we address several subtleties when it comes to the ex-
plicit validation of our theoretical findings by experimental
means.
2 Molecular junction setup
In order to obtain analytical tractable expressions we shall
neglect electron-phonon interactions and, as well, electron-
electron interactions. Such a simplification can be justified
for tailored situations that involve a very short wire only.
Then, the Coulomb interaction via a double occupancy
shifts the energy far above the Fermi level so that its role
in thermal transport can be neglected. Likewise, the elec-
tron dwell time is short as compared to the electron-phonon
relaxation time scale. Note however, that in contrast to pre-
vious works [44], we account here for the dependence of
the transmission coefficient on its electron energies, and,
within the Green function approach [6,34], derive an ex-
plicit expression for the PSD of the heat current fluctua-
tions, Sh(ω). In particular we demonstrate below that the
net noise features of the heat current are quite distinct from
their electronic counterpart.
Our molecular junction setup is depicted with Fig. 1: It
is described by a Hamiltonian
H = Hwire + Hleads + Hcontacts .
(1)
It contains three different contributions, namely the wire
Hamiltonian, the leads and the wire-lead coupling, respec-
tively. We consider here the regime of coherent quantum
transport whereby neglecting dissipation inside the wire.
The wire is composed of a single orbital; i.e.,
Hwire = ε0d†d ,
(2)
pss header will be provided by the publisher
3
at an energy ε0, with the fermionic creation and annihila-
tion operators, d† and d. The energy level ε0 can be tuned
by applying a gate voltage. Our idealized setup allows for
explicit analytical calculations. Physically, it mimics a dou-
ble barrier resonant tunneling structure GaAs/AlxGa1−x-
structure of the type considered for electronic shot noise
calculations in Ref. [46], herein truncated to a single Lan-
dau level. As commonly implemented, the electrodes are
modeled by reservoirs, composed of ideal electron gases,
i.e.,
Hleads =Xℓq
εℓqc†
ℓqcℓq ,
(3)
where the operator c†
ℓq(cℓq) creates (annihilates) an elec-
tron with momentum q in the ℓ =L (left) or ℓ =R (right)
lead. We assume that the electron distributions in the leads
are described by the grand canonical ensembles at the tem-
peratures TL/R and with chemical potentials µL/R. Using
such ideal electron reservoirs we obtain
hc†
ℓqcℓ′q′ i = δℓℓ′δqq′ fℓ(εℓq) ,
where
fℓ(εℓq) =he(εℓq −µℓ)/kBTℓ + 1i−1
denotes the Fermi function.
(4)
(5)
We impose a finite temperature difference ∆T = TL −
TR and use identical chemical potentials, µL = µR = µ for
the electrodes. When an electron tunnels out from a lead,
the energy E is transferred into the wire which presents
the heat transfer, δQ. Observing the value for the chemical
potential, µ, it reads δQ = (E − µ). In the following we
use that all the electron energies are measured from the
chemical potential value µ, being set at µ = 0.
The Hamiltonian which describes the tunneling events
reads:
Hcontacts =Xℓq
Vℓqc†
ℓqd + h.c. .
(6)
ΓL
ΓR
µ
ε0
µ
TL > TR
Figure 1 (color online) Idealized setup of a molecular
junction used in text: Two metal leads, each filled with an
ideal electron gas, are connected by a single orbital ε0. The
coupling strengths are determined by ΓL/R. The left lead is
prepared at a higher temperature as compared to the oppo-
site right lead, i.e. TL > TR. The chemical potential, µ, is
the same for both leads so that no electric current due to a
finite voltage bias is present.
This part mediates the coupling between the wire and the
electrodes. Here, the notation h.c. denotes Hermitian con-
jugate. The quantity Vℓq is the tunneling matrix element,
and the tunneling coupling is characterized in general by a
spectral density,
Γℓ(E) = 2πXq
Vℓq2δ(E − εℓq) .
(7)
In the following, we shall use a wide-band limit of the
electrode conduction bands, setting Γℓ(E) := Γℓ.
3 Power spectral density of electronic heat cur-
rent fluctuations
Working within the Heisenberg description of operators we
present the detailed derivation of the electronic energy cur-
rent induced by a finite temperature difference of the two
leads and the PSD of the corresponding energy fluctua-
tions. We limit the consideration to pure energy transfer
that proceeds in absence of a finite voltage bias across the
two leads and no particle concentration across the leads.
Put differently, no cross-phenomena of energy transfer due
to a charge current (i.e. no Joule heating) or due to a parti-
cle concentration current (i.e. no Dufour effect) is at work.
Therefore, because all other channels for the energy trans-
port between the leads are then explicitly excluded form
our consideration, we follow previous works, e.g. see in
Refs. [24,44], and use throughout this study the term 'heat
current' as synonym for energy current. The electronic
thermal current then reads
J h
L(t) = P δQ(t)
∆t
.
(8)
With our choice of chemical potentials µL = µR = 0,
we find that the heat transfer operator is δQ(t) = EL, with
the energy operator given by
εLqc†
LqcLq .
EL =Xq
(9)
Its time derivative thus yields the operator for the heat flux,
reading:
J h
L(t) = −Xq
2εLq
¯h
Im[VLqc†
Lq(t)d(t)] .
(10)
The heat current is positive valued when heat transport pro-
ceeds from the hot left lead, i.e. TL > TR to the adjacent
cold lead, see in Fig. 1. In deriving the above expression we
have employed the Heisenberg representation for the lead
electron operators. The average current is obtained by the
L(t)i. Because there are no electron
ensemble average hJ h
sinks and sources in between the leads we have hJ h
L(t)i =
R(t)i. We henceforth focus on the quantities derived
−hJ h
with regard to the left lead; i.e., hJ h
L(t)i := hJ h(t)i.
Copyright line will be provided by the publisher
4
First author et al.: Short title
∆J h
L(t) = J h
L(t) − hJ h
L(t)i .
(12)
ξℓ(t) = −
The quantum correlation function of heat current fluc-
tuations is described by the symmetrized auto-correlation
function, i.e.,
Sh(t, t′) =
L(t), ∆J h
1
2(cid:10)[∆J h
L(t′)]+(cid:11) ,
(11)
with respect to the operator of the heat current fluctuation
The heat current noise is described with τ = t − t′ by
the symmetrized quantum auto-correlation function
Sh(τ ) = 1/2h[∆J h
ℓ (τ ), ∆J h
ℓ (0)]+i ,
(13)
ℓ (s) −
ℓ (s)i, where the anti-commutator [A, B]+ = AB + BA
of the heat current fluctuation operator ∆J h
hJ h
ensures the Hermitian property.
ℓ (s) = J h
With this work we throughout consider the asymptotic
long time limit t → ∞ when all transients are decayed. In
this asymptotic limit the average heat current is stationary
and the auto-correlation function of the heat current fluc-
tuations becomes time-homogeneous; i.e. it is independent
of initial preparation effects. It thus depends on the time
difference τ = t − t′ only. The Fourier transform yields
the power spectral density (PSD) Sh(ω) for the heat cur-
rent noise, i.e.,
Sh(ω) = Sh(−ω) =Z ∞
−∞
dτ eiωτ Sh(τ ) ≥ 0 .
(14)
Sh(ω) is an even function in frequency and strictly semi-
positive, in accordance with the Wiener-Khintchine theo-
rem [47]. In the following we address positive values of
the frequency, ω > 0, only.
The annihilation operators of the electrode states sat-
isfy the Heisenberg equations of motion; i.e.,
cℓq(t) = −
i
¯h
εℓqcℓq(t) −
i
¯h
Vℓqd(t) ,
(15)
yielding the solution
cℓq(t) =cℓq(t0)e−iεℓq (t−t0)/¯h
−
iVℓq
¯h Z t
t0
dt′e−iεℓq(t−t′)/¯hd(t′) .
(16)
Here, the first term on the right hand side describes the dy-
namics of the free electrons in the leads, while the second
term accounts for the influence of the molecule.
The Heisenberg equation of the molecular annihilation
operator is given by
d(t) = −
i
¯h
ε0d(t) −
i
¯hXℓq
V ∗
ℓqcℓq(t).
(17)
Copyright line will be provided by the publisher
Upon inserting Eq. (16) into Eq. (17), we obtain
d =
i
¯h
ε0d(t) −
ΓL + ΓR
2¯h
d(t) + ξL(t) + ξR(t),
(18)
where we have defined the noise operator
i
¯hXq
V ∗
ℓq exp(cid:20)−
i
¯h
εℓq(t − t0)(cid:21) cℓq(t0).
(19)
In addition, we have employed the definition (7) and used
the wide-band limit.
The noise quantity defined in Eq. (19) denotes operator-
valued Gaussian noise, which is characterized by its mean
and correlation properties, reading
hξℓ(t)i = 0
hξ†
ℓ′ (t′)ξℓ(t)i = δℓℓ′Z ∞
−∞
dε
(20)
2π¯h2 e−iε(t−t′)/¯hΓℓ(ε)fℓ(ε).
(21)
This noise accounts for the influence of the states stem-
ming from the electrodes l = L, R.
Now the central problem is to solve the inhomogeneous
differential equation (17). Once we obtain the solution of
Eq. (17), we obtain also the solution for Eq. (16), the heat
current (10) and also the power spectral density in Eq. (14).
To obtain the solution of Eq. (18), we follow the Green
function approach in Ref. [6] and start with solving the fol-
lowing differential equation
(
d
dt
+
iε0
¯h
+
ΓL + ΓR
2¯h
)G(t − t′) = δ(t − t′) ,
(22)
followed by the application of the convolution d(t) =
R G(t − t′)(ξL(t′) + ξR(t′))dt′. The solution of Eq. (22) is
thus given by:
G(t) = θ(t)e−iε0t/¯h−(ΓL+ΓR)t/2¯h .
(23)
Then, the molecular operator in Eq. (18) assumes the form
d(t) =Xℓq
V ∗
ℓq
exp[−iεℓq(t − t0)/¯h]
εℓq − ε0 + i(ΓL + ΓR)/2
cℓq(t0) .
(24)
In what follows we address solely the asymptotic prop-
erties which are reached with the initial time of prepara-
tion t0 → −∞. This implies that average currents assume
stationary values and correlation functions become time-
homogeneous. With this expression and its Hermitian con-
jugate, we obtain the occupation value of the molecular en-
pss header will be provided by the publisher
5
8
4
0
2
1.5
1
0.5
)
W
3
1
−
0
1
(
h
J
)
z
H
/
2
W
4
3
−
0
1
(
h
S
(a)
(b)
TL 6= TR
TL = TR
TL 6= TR
TL = TR
−1
0
1
ε0 (meV)
Figure 2 (color online) (a) Average electronic heat cur-
rent J h and (b) the zero-frequency values of correspond-
ing heat noise power Sh of the accompanying heat current
fluctuations as a function of orbital energy for an iden-
tical lead coupling strength Γ = 0.1 meV. The param-
eters are: TL = 5.2 K, TR = 3.2 K (solid lines) and
TL = TR = 4.2 K (dashed line). Figure in parts adapted
from Ref. [45].
ergy level ε0 as
nε0 = hd†(t)d(t)i
Vℓq exp[iεℓq(t − t0)/¯h]
[εℓq − ε0 − i(ΓL + ΓR)/2]
= Xℓℓ′qq′
×
V ∗
ℓ′q′ exp[−iεℓ′q′ (t − t0)/¯h]
[εℓ′q′ − ε0 + i(ΓL + ΓR)/2]
hc†
ℓq(t0)cℓ′q′ (t0)i
Vℓq2fℓ(εℓq)
(εℓq − ε0)2 + (ΓL + ΓR)2/4
,
(25)
=Xℓq
where we have employed the ensemble average, Eq. (4).
We find that this occupation is determined by the Fermi
function of the leads, weighted by the tunneling matrix
elements Vℓq and the difference between lead states and
the molecular energy level ε0, see in Eq. (25). This oc-
cupation value is time-independent because there are no
time-dependent external fields present.
Upon substituting the result in Eq. (24) into Eq. (16),
we find for the operators in the electrodes
cℓq(t) = cℓq(t0)e−iεℓq (t−t0)/¯h
VℓqV ∗
ℓ′q′ e−iεℓ′ q′ (t−t0)/¯h
εℓ′q′ − ε0 + i(ΓL + ΓR)/2
cℓ′q′ (t0)
+Xℓ′q′
× B[εℓ′q′ − εℓq] ,
where,
B(E) = P(cid:18) 1
E(cid:19) − iπδ(E) ,
(26)
(27)
and P denotes the integral principal value. In going from
Eq. (24) to Eq. (26) we have used Sokhotsky's formula
which states that limǫ→0 1/(x + iǫ) = P(1/x) − iπδ(x),
0+ dx/x, see in Ref. [48].
where P(1/x) =R 0−
−∞ dx/x +R ∞
Next we insert Eq. (24) and Eq. (26) into the heat cur-
rent operator, Eq. (10), and by consequently taking the en-
semble average, we obtain a Landauer-like formula for the
heat current, reading [8,24,25,26,33,51]:
hJ h(t)i := J h =
1
2π¯hZ dEET (E)[fL(E) − fR(E)] ,
(28)
where the transmission coefficient
T (E) = ΓLΓR/[(E − ε0)2 + Γ 2] ,
(29)
is energy-dependent.
The expression for the thermoelectric charge cur-
rent [25] reads very similar to Eq. (28), except for its
absence of the energy multiplier E in the integral on the
rhs of Eq. (28). This seemingly small difference changes,
however, the physics of transport through the wire, be-
cause the multiplier inverts the symmetry of the integral.
Namely, the thermolelectric current is an antisymmetric
function of orbital energy and vanishes when the orbital
energy level is aligned to the chemical potentials of the
leads [45], while the heat current is a symmetric function
and acquires a nonzero value at ε0 = 0, see in Fig. 2(a).
3.1 Main result and discussion
Upon combining Eq. (14) and Eq. (10), we end up after a
cumbersome evaluation with the nontrivial expression for
the PSD of electronic heat current noise. Due to the com-
plexity of this resulting expression the physics it inherits
is not very illuminative. Nevertheless, we depict it here as
Copyright line will be provided by the publisher
6
First author et al.: Short title
)
z
H
/
2
W
5
3
−
0
1
(
h
S
104
102
100
10−2
10−4
1
10
100
1000
ω (1011 Hz)
Figure 3 Power spectral density of the heat current noise
as a function of the frequency ω at temperatures TL =
6 K, TR = 2 K. The other parameters are ε0 = 0 and
Γ = 0.1 meV.
given in our preliminary report [45], reading:
Sh(Ω = ¯hω; TL, TR)
Ω
=X± Z dE
2(cid:19)2
T (E)T (E ± Ω)
4π¯h("(cid:18)E ±
[(E − ε0)2 + Γ 2] [(E ± Ω − ε0)2 + Γ 2] #
L [E(E − ε0) − (E ± Ω)(E ± Ω − ε0)]2
Γ 2
+
× fL(E)f L(E ± Ω)
+(cid:18)E ±
+(cid:20)(cid:18)E ±
Ω
2(cid:19)2
2(cid:19)(cid:18)±
Ω
+ E2R(E)T (E ± Ω) ∓
× fL(E)f R(E ± Ω)
T (E)T (E ± Ω)fR(E)f R(E ± Ω)
Ω
2(cid:19) Γ 2
LT (E ± Ω)
(E − ε0)2 + Γ 2
1
2
EΩT (E)T (E ± Ω)(cid:21)
+(cid:20)(E ± Ω)(cid:18)±
+ (E ± Ω)2 R(E ± Ω)T (E)
Ω
2(cid:19) T (E)T (E ± Ω)
2(cid:19) Γ 2
(E − ε0)2 + Γ 2(cid:21)
LT (E ± Ω)
Ω
+(cid:18)E ±
Ω
2(cid:19)(cid:18)∓
× fR(E)f L(E ± Ω) ,
(30)
wherein we abbreviated Ω ≡ ¯hω, f ≡ 1 − f , and R(E) ≡
1 − T (E) denoting the reflection coefficient. Below we
consider the case of symmetric coupling between the wire
and the leads, ΓL = ΓR = Γ .
We emphasize here that this heat PSD is a manifest
nonequilibrium result where with a finite temperature bias
the result accounts for 'heat'-shot noise and, simultane-
ously nonequilibrium, Nyquist-like heat noise. Let us next
discuss, via graphical means, some general features of the
inherent complexity as depicted with Eq. (30).
Copyright line will be provided by the publisher
In Figure 3, we depict the dependence of the PSD of
heat current fluctuations versus frequency ω at finite tem-
perature bias, given by TL = 6 K, TR = 2 K. We deduce
from the figure that this nonequilibrium PSD exhibits dif-
ferent power laws in different frequency regions and grows
with increasing frequency.
Moreover, we find that the spectral density strength Γ
of the wire-lead coupling can change the dependence of
the heat fluctuation PSD on the parameters. In Figure 4 we
depict the PSD as a function of the temperature difference
∆T over a wide regime of ∆T = 40 K, both in the case of
weak and strong wire-lead couplings. With weak coupling,
the PSD is smaller by one order of magnitude and only
weakly (i.e. with a small slope) increases with ∆T , see
Fig. 4(a). In contrast, the PSD increases very fast with ∆T
when the coupling is very strong, see in Fig. 4 (b). Accord-
ing to Eq. (29), the transmission coefficient becomes wider
when Γ is larger, such that more electrons, whose energies
deviate stronger from the chemical potential, are allowed
to transport across the molecular junction. Therefore, the
PSD becomes strongly enhanced and depends sensitively
on ∆T .
It is striking that both dependencies are near perfectly
linear over the wide temperature regime of ∆T . Given the
complex structure of the nonlinear nonequilibrium PSD
detailed with the lengthy expression in (30) such extended
linearity can hardly be expected a priori. The mechanism
behind this distinctive feature is not evident and thus con-
stitutes an interesting issue for further studies.
3.2 Issues relating to experimental validation
It should also be mentioned here that the explicit verifi-
cation of quantum mechanical power spectral densities is
experimentally not at all straightforward. In clear contrast
to the classical case, the symmetrized quantum correlation
for heat in Eq. (13) presents no manifest quantum observ-
able that can be measured directly, but rather it is a func-
tional operator expression involving the time-evolution of
the dynamics. This is so because the heat flux operators
at different times do not commute. In fact, a quantum me-
chanical evaluated PSD can be measured only indirectly
via a single-time measurement of a tailored linear response
function, via a corresponding, generally nonequilibrium
quantum fluctuation-dissipation relation which connects
this response function with a corresponding quantum me-
chanical two-time correlation expression [47]. Put differ-
ently, this tailored response function is then required to re-
late precisely to our so calculated nonequilibrium quantum
correlation of heat fluctuations in (13). This is so because a
direct two-time quantum measurement of two observables
at different times t would then impact (i.e. it will generally
alter) the a priori theoretically determined quantum two-
time correlation expression in (14); for further details and
similar pitfalls see also in Refs. [49,50], where the problem
of measuring quantum work poses the same challenge.
pss header will be provided by the publisher
(a)
(b)
)
z
H
/
2
W
5
3
−
0
1
(
h
S
1.68
1.64
0
7800
7500
7200
40
0
7
40
∆T (K)
∆T (K)
Figure 4 Power spectral density of heat current noise at frequency ω = 2.16 × 1013 Hz (which is the Debye cut-off
frequency of gold) as a function of temperature difference with (a) weak molecule-wire coupling Γ = 0.1 meV or (b)
strong molecule-wire coupling Γ = 10 meV. The other employed parameters are TR = 300 K and ε0 = 0.
The situation becomes more promising when we focus
on the zero-frequency result of the PSD for heat noise: The
variance < ∆Q2(t) > of the accumulated heat fluctuation
over a time span t reads
< ∆Q2(t) >=<(cid:16)Z t
0
ds∆J h(s)(cid:17)2
>
(31)
Using a long measurement time span t the time-
dependent expectation value then relates to the zero fre-
quency component of the PSD. This is the case upon noting
that the symmetrized correlation is a symmetric function
of its argument and assuming that the time-homogeneous
auto-correlation of stationary heat fluctuations vanishes in
sufficiently strong a manner for infinite time. Then, the
integral in (31) can be extended to infinity, yielding
lim
t→∞
< ∆Q2(t) > /t =Z ∞
−∞
dτ Sh(τ ) = Sh(ω = 0).
(32)
The result for the zero-frequency limit therefore relates
to a single time measurement of the manifest quantum
observable ∆Q2(t). Still to measure accumulated 'heat'
rather than 'heat-flux' presents a formidable challenge
for the experimenter; the case with accumulated electric
charge is a lot easier accessible. The detailed behavior of
this zero-frequency nonequilibrium heat noise PSD will be
studied next.
3.3 Zero frequency noise power
The theoretical PSD of heat current noise at zero frequency
ω = 0 simplifies considerably, assuming the appealing
form
Sh(ω = 0; TL, TR)
=
1
2π¯hZ dEE2{T (E)(fL(E)[1 − fL(E)]
+ fR(E)[1 − fR(E)])
+ T (E)[1 − T (E)][fL(E) − fR(E)]2} .
(33)
Here the last line refers to a heat-shot-noise contribu-
tion while the first part corresponds to a nonequilibrium
Nyquist-like heat noise contribution. Matters simplify con-
siderably in thermal equilibrium where the shot noise con-
tribution vanishes identically.
Let us also briefly contrast this result with the zero-
frequency PSD of the fluctuations displayed by the non-
linear, accompanying thermoelectric current. The latter
reads [4,6]:
=
Sel(ω = 0; TL, TR)
e2
2π¯hZ dE{T (E)(fL(E)[1 − fL(E)]
+ fR(E)[1 − fR(E)])
+ T (E)[1 − T (E)][fL(E) − fR(E)]2} ,
(34)
Most importantly, the zero-frequency PSD for heat cur-
rent in Eq. (33) differs by the energy factor E2 within
the integrand. Although this distinction seemingly appears
minor and may even be guessed beforehand without go-
ing through the laborious task of doing a theoretical rig-
orous derivation from which this limit derives from the
frequency-dependent main result given in Eq. (30). It must
be emphasized, however, that the two expressions lead to
tangible differences. Particularly, note the different behav-
ior of the electronic and heat noise PSDs versus the tunable
energy level ε0 as depicted with Fig. 2 (b) and in Fig. 5.
While the zero-frequency component of the electric PSD
at ω = 0 exhibits a maximum at ε0 = 0, see in Fig. 2(c)
in Ref. [45], its heat current PSD possesses instead a lo-
cal minimum at this value, see Fig. 2(b). These two PSDs
for charge current and heat current are compared in Fig. 5
over wide regimes of the electronic orbital energy ε0 and
the lead-molecule strength Γ .
These differences originate from the salient feature
that the two transport mechanisms for charge and the en-
Copyright line will be provided by the publisher
8
First author et al.: Short title
1.2
0.8
0.4
)
z
H
/
2
W
3
3
−
0
1
(
h
S
0
1.5
ε
1
0.5
0(meV)
−0.50
−1.5−1
0.4
0.2
1
0.8
0.6
( m e V )
Γ
4
2
)
z
H
/
2
A
7
2
−
0
1
(
l
e
S
0
1.5
1
0.5
−0.50
ε0(meV)
−1.5−1
0.4
0.2
1
0.8
( m e V )
0.6
Γ
Figure 5 (color online) Power spectral density of the heat current noise at zero frequency ω = 0, (left panel) and power
spectral density of the electric current noise (right panel) as functions of the wire orbital site energy ε0 and wire-lead
coupling strength Γ . The parameters employed are TL = 6.2K and TR = 2.2K.
ergy are different. The electric current is quantized by the
electron charge e while, in contrast, the energy carried
by the electron is continuous and can assume principally
an arbitrary value. Notably, the main contribution to the
electronic noise power across the wire stems from those
electrons occupying energy levels around the chemical po-
tential µ = 0. When ε0 deviates from the chemical poten-
tial, increasingly less electrons participate in the transport.
The flow of electron becomes diminished, and since both,
the electric current and the electric noise are insensitive
to the electron kinetic energies, they both decrease with
increasing ε0. This scenario differs for heat flow: There,
the deviation from the chemical potential increases the
possibility that successive electrons will carry different en-
ergies. This in turn causes an increase of heat current noise.
With further deviation of the orbital energy from the chem-
ical potential, the occupancy difference [fL(E) − fR(E)]
decreases monotonically; consequently the noise power
Sh(ω = 0) decreases again.
3.4 Electronic heat current noise in thermal equi-
librium
Next, let us focus on thermal equilibrium which is attained
when the two temperatures are set equal, i.e. if TL = TR.
In this case the average heat current vanishes identically,
while its fluctuations remain finite. The zero-frequency
spectra of both noise spectra for heat and electric current
noise increase upon increasing the coupling strength Γ .
This is so because the transmission probability increases.
The corresponding heat noise power is nonzero in equilib-
rium, however, as depicted with Fig. 2(b).
In thermal equilibrium with TL = TR = T the
nonequilibrium zero frequency PSD in Eq. (33) simpli-
fies further, obeying
Sh(ω = 0, T ) = 2kBT 2 Gh(ω = 0) ,
(35)
where Gh(ω = 0) denotes the static, linear heat con-
ductance, obtained from expanding the result in Eq. (28)
Copyright line will be provided by the publisher
around a small
temperature bias and comparing with
Eq. (33). This result is therefore in agreement with the
fluctuation-dissipation-theorem (FDT) for the static heat
conductance.
Note that an extension to a Green-Kubo-like, but now
frequency dependent conductance, however, would intrin-
sically require also intermediate time-varying temperatures
T (t). Such a concept with a time-dependent, nonequilib-
rium temperature, cannot be justified in the coherent quan-
tum regime of an open system with only one level ǫ0 con-
necting the two leads. In fact even for a different setup with
a spatially extended intermediate thermal conductor it has
been found in Ref. [44] that at finite frequencies ω the PSD
is not related to the corresponding linear heat conductance
in the ballistic, low temperature transport regime. This vio-
lation of the FDT is thus far from being fully settled in the
literature.
The properties at zero absolute temperature, TL =
TR = 0, become even more subtle. Here, the heat current
PSD at finite frequencies ω still depends on frequency.
This dependence originates from quantum fluctuations
where virtual transitions of electrons from lead-to-lead
occur [44]. The Fermi distribution equals the Heaviside
step function in this case. Therefore, the contributions to
the integrand in Eq. (30) stems from the interval [−Ω, 0].
After an integration of Eq. (30), one finds for the frequency
dependent PSD the expression:
Sh(ω, TL = TR = 0)
Γ
=
4π¯h(cid:26)(cid:2)(2Ω)2 − 2Γ 2(cid:3) arctan(cid:18) Ω
Γ (cid:19)
+ 2 ΩΓ "1 + log
(Ω2 + Γ 2)2!#) , Ω ≡ ¯hω.
Γ 4
In the limit Γ → ∞ the zero-temperature PSD scales
like Sh(ω) ∝ ω3. This is in full agreement with results
obtained in the work [44] for a different setup, where such
(36)
pss header will be provided by the publisher
9
an asymptotic behavior is found uniformly throughout the
whole frequency region. This uniform feature no longer
holds true when Γ is finite: The second term in the rhs
of
(36) introduces a linear cutoff in the limit ω → 0,
so that [ Sh(ω) − Sh(ω = 0)] ∝ ω in the extreme low
frequency limit. In distinct contrast, in the high-frequency
region, the first term in the rhs of (36) becomes dominat-
ing. As a consequence, the PSD (36) in the high frequency
limit approaches a square-law asymptotic crossover depen-
dence, Sh(ω) ∝ ω2.
4 Conclusions and sundry topics
By using the Green function formalism we have investi-
gated electronic heat current. Our focus centered on the is-
sue of the heat current fluctuations in a molecular junction
model composed of a single orbital molecular wire. For the
noninteracting case we succeeded in deriving a closed form
for the frequency dependence of heat current noise; i.e. the
heat noise PSD, both in nonequilibrium TL 6= TR and in
thermal equilibrium TL = TR. The dependence of the heat
current noise on the orbital energy ε0 is qualitatively differ-
ent from that for the accompanying electric current noise,
see Fig. 5. Moreover, the heat current fluctuation proper-
ties depend strongly on the the overall tunneling coupling
strengths ΓL = ΓR = Γ .
In the zero-temperature limit, the PSD of the heat cur-
rent noise obeys two distinctive asymptotic behaviors, be-
ing different in the intermediate-low frequency and in the
high-frequency regimes. The particular square-law behav-
ior of the PSD in the high-frequency region is due to the
Lorentzian shape of the transmission coefficient T (E) in
Eq. (29). Yet, the general effect would remain for any
choice of the coefficient in the form of a localized, bell-
shaped function: the noise spectrum will deviate from a cu-
bic power-law asymptotic behavior upon entering the high-
frequency region.
As emphasized in our introduction, with this work only
the electron subsystem has been considered. Realistic heat
transport in real molecular junctions would involve the
complexity of interacting electrons and electron-phonon
interactions [8]. This electronic heat transport may dom-
inate in certain situations so that the measured heat noise
can be attributed approximately to the electronic compo-
nent only. The unified approach, which would include both
the electron and the phonon subsystems, as well as the ef-
fects of their interactions, presents a future challenge al-
though several contributions in this direction for the aver-
age heat current (but not the heat current noise PSD) have
already been undertaken before [8,30,33,51].
4.1 Open issues
We conclude this study with further remarks that may shed
light on challenging open problems and in addition may
invigorate others to pursue future research in objectives
addressed with our study. A first observation is that we
obtained within the Green function analysis tractable ex-
pressions for quantum transport in the steady state without
ever having to invoke the explicit knowledge of the inher-
ent nonequilibrium density operator. Naturally, the quan-
tum averages for the current and the auto-correlation of
the quantum fluctuations carry less information as encom-
passed with the full steady state nonequilibrium density
operator. The latter nonequilibrium density operator is typ-
ically very difficult to obtain and explicit results are known
for tailored situations only. In fact, explicit results are very
intricate already for those cases with overall quadratic
Hamiltonians [52].
As discussed above, a much more subtle issue refers
to the experimental detection of quantum correlations. In
clear contrast to the case with a quantum, single-time ex-
pectation of a quantum observable, the issue of measure-
ment of manifest quantum correlations is a delicate ob-
jective that is only rarely addressed with sufficient care in
the literature. This is so because the mere calculation of
a theoretical two-time quantum correlations does not say
anything about its feasible experimental measurement sce-
nario. Either strong (i.e. von Neumann-type) or weak quan-
tum measurements impact the dynamics as clearly mani-
fested with the example of the Zeno-effect [53,54].
With more than one time present this objective re-
lates to the problem of measurements of quantities that are
not given in terms of quantum observables [49,50,55,56].
To appreciate the complexity somewhat in more detail let
us first consider the case with classical random variables.
Then the PSD can be obtained experimentally as the limit
of a time average of the classical random process J h(t),
via considering the expression
Sh
t→∞(ω) = limt→∞
Z t
−t
1
2t(cid:12)(cid:12)(cid:12)(cid:12)
2
.
ds J h(s) exp(iωs)(cid:12)(cid:12)(cid:12)(cid:12)
(37)
Note that classically the measurement of the stochastic
variable of the instantaneous heat flow J h(t) presents no
serious problem while the same is not straightforward for
a quantum dynamics. Moreover, even classically, the re-
sult in (37) holds true only when the stochastic, finite value
t (ω) tends to the exact ensemble averaged value Sh(ω),
Sh
with its variance approaching zero as t → ∞. The latter
implies conditions of higher, fourth-order correlations to
be satisfied [57]. With the feature of dealing with the non-
commutation property of quantum observables at different
times no such direct scenario is available for experiment.
Here the complexity of quantum measurements will enter
in its full generality. Only for tailored situations this task
may simplify further, as it was the case in Sects. 3.2, 3.4
for the zero frequency limit.
As mentioned already above, the case of quantum lin-
ear response theory may come as support also for nonequi-
librium: The measurement of a single observable (here the
heat flux operator) due to an external perturbation is typi-
cally related to the evaluation of a specific quantum corre-
lation function [47]. The case of the quantum-dissipation
relation of Callen-Welton in thermal equilibrium presents
Copyright line will be provided by the publisher
10
First author et al.: Short title
such a celebrated case [58,59,60]. There, the dissipative
part of the measurable, frequency-dependent susceptibil-
ity of a perturbed observable B is uniquely related to the
power spectral density SBA(ω) of quantum fluctuations of
the observable B and the fluctuations of observable A to
which an applied external conjugate force couples. In our
case it remains therefore a formidable task to identify the
corresponding variable for the nonequilibrium situation so
that the single-time measurement of its linear response be-
comes related to the heat PSD in Eq. (30) in a prescribed
manner. This at best is possible for the thermal equilib-
rium PSD in which an imposed energy perturbation cou-
ples to the thermal affinity ∆T /T ; cf. in Refs.
[61,62,
63]. This is not possible, however, for the equilibrium heat
flow fluctuations at absolute T = 0, with the inherent ther-
mal affinity being divergent. In presence of quantum co-
herence destroying phenomena, such as high temperature
or disorder, the nature of quantum correlations becomes
suppressed. Then, the classical scenario can be used again
to validate the theoretical predictions in thermal equilib-
rium [4,60] and for tailored steady-state nonequilibrium
situations; note the nonequilibrium fluctuation theorems in
Ref. [47].
Acknowledgements Work supported by the German Ex-
cellence Initiative via the "Nanosystems Initiative Munich"
(NIM) (P.H.), the DFG priority program DFG-1243 "Quantum
transport at the molecular scale" (F.Z., P.H.), and the Volkswagen
Foundation (Project No. I/83902) (P. H. and S.D).
References
[1] M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin, and J. M.
Tour, Science 278, 252 (1997).
[2] A. Nitzan and M. A. Ratner, Science 300, 1384 (2003).
[3] C. Joachim and M. A. Ratner, Proc. Natl. Acad. Sciences
102, 8801 (2005).
[4] Y. M. Blanter and M. Buttiker, Phys. Rep. 336, 1 (2000).
[5] P. Hanggi, M. Ratner, and S. Yaliraki, Chem. Phys. 281, 111
(2002).
[6] S. Kohler, J. Lehmann, and P. Hanggi, Phys. Rep. 406, 379
(2005).
[7] G. Cuniberti, G. Fagas, and K. Richter, (eds.), Lect. Notes
Phys. 680, 1 -- 518 (2005).
[8] Y. Dubi and M. D. Ventra, Rev. Mod. Phys. 83, 131 (2011).
[9] S. R. Forrest, Nature 428, 911 (2004).
[10] C. Joachim, J. K. Gimzewski, and A. Aviram, Nature 408,
541 (2000).
[11] N. J. Tao, Nanotechnology 1, 173 (2006).
[12] X. D. Cui, A. Primak, X. Zarate, J. Tomfohr, O. F. Sankey,
A. L. Moore, T. A. Moore, D. Gust, G. Harris, and S. M.
Lindsay, Science 294, 571 (2001).
[13] J. Reichert, R. Ochs, D. Beckmann, H. B. Weber, M. Mayor,
and H. v. Lohneysen, Phys. Rev. Lett. 88, 176804 (2002).
[14] L. S. Levitov and M. Reznikov, Phys. Rev. B 70, 115305
(2004).
[15] J. P. Morten, D. Huertas-Hernando, W. Belzig, and
A. Brataas, Phys. Rev. B 78, 224515 (2008).
[16] D. A. Bagrets and Y. V. Nazarov, Phys. Rev. B 67, 085316
(2003).
Copyright line will be provided by the publisher
[17] M. Esposito, U. Harbola, and S. Mukamel, Rev. Mod. Phys.
81, 1665 (2010).
[18] N. Cl´ement, S. Pleutin, O. Seitz, S. Lenfant, and D. Vuil-
laume, Phys. Rev. B 76, 205407 (2007).
[19] C. Beenakker and C. Schonenberger, Physics Today 56, 37
(2003).
[20] Y. P. Li, D. C. Tsui, J. J. Heremans, J. A. Simmons, and G. W.
Weimann, Appl. Phys. Lett. 57, 774 (1990).
[21] M. Buttiker, Phys. Rev. B 45, 3807 (1992).
[22] S. Camalet, S. Kohler, and P. Hanggi, Phys. Rev. B 70,
155326 (2004).
[23] F. Zhan, N. Li, S. Kohler, and P. Hanggi, Phys. Rev. E 80,
061115 (2009).
[24] H. L. Engquist and P. W. Anderson, Phys. Rev. B 24, 1151
(1981).
[25] U. Sivan and Y. Imry, Phys. Rev. B 33, 551 (1986).
[26] P. N. Butcher, J. Phys. Condens. Matter 2, 4869 (1990).
[27] J. Koch, F. von Oppen, Y. Oreg, and E. Sela, Phys. Rev. B
70, 195107 (2004).
[28] Y. C. Chen and M. Di Ventra, Phys. Rev. Lett. 95, 166802
(2005).
[29] M. Galperin, A. Nitzan, and M. A. Ratner, Phys. Rev. B 73,
045314 (2006).
[30] M. Galperin, A. Nitzan, and M. A. Ratner, Phys. Rev. B 75,
155312 (2007).
[31] D. Segal, Phys. Rev. B 73, 205415 (2006).
[32] M. Paulsson and S. Datta, Phys. Rev. B 67, 241403 (2003).
[33] M. Galperin, M. A. Ratner, and A. Nitzan, J. Phys.: Con-
dens. Matter 19, 103207 (2007).
[34] J. S. Wang, J. Wang, and J. T. Lu, Eur. Phys. J. B 62, 381
(2008).
[35] N. Li, J. Ren, L. Wang, G. Zhang, P. Hanggi, and B. Li, Rev.
Mod. Phys. 84, 1045 (2012).
[36] J. Lehmann, S. Kohler, P. Hanggi, and A. Nitzan, Phys. Rev.
Lett. 88, 228305 (2002).
[37] J. Lehmann, S. Camalet, S. Kohler, and P. Hanggi, Chem.
Phys. Lett. 368, 282 (2003).
[38] C. W. Chang, D. Okawa, A. Majumdar, and A. Zettl, Science
314, 1121 (2006).
[39] L. Wang and B. Li, Phys. Rev. Lett. 99, 177208 (2007).
[40] B. Li, L. Wang, and G. Casati, Phys. Rev. Lett. 93, 184301
(2004).
[41] B. Li, L. Wang, and G. Casati, Appl. Phys. Lett. 88, 143501
(2006).
[42] M. Rey, M. Strass, S. Kohler, P. Hanggi, and F. Sols, Phys.
Rev. B 76, 085337 (2007).
[43] I. V. Krive, E. N. Bogachek, A. G. Scherbakov, and U. Land-
man, Phys. Rev. B 64, 233304 (2001).
[44] D. V. Averin and J. P. Pekola, Phys. Rev. Lett. 104, 220601
(2010).
[45] F. Zhan, S. Denisov, and P. Hanggi, Phys. Rev. B 84, 195117
(2011).
[46] Ø. L. Bø and Y. Galperin, J. Phys.: Condens. Matter 8, 3033
(1996).
[47] P. Hanggi and H. Thomas, Phys. Rep. 88. 207 (1982).
[48] V. S. Vladimirov, Equations of Mathematical Physics (New
York, Dekker, 1971).
[49] M. Campisi, P. Talkner, and P. Hanggi, Phys. Rev. Lett. 105,
140601 (2010).
pss header will be provided by the publisher
11
[50] M. Campisi, P. Talkner, and P. Hanggi, Phys. Rev. E 83,
041114 (2011).
[51] D. Segal, A. Nitzan, and P. Hanggi, J. Chem. Phys. 119,
6840 (2003).
[52] A. Dhar, K. Saito, and P. Hanggi, Phys. Rev. E 85, 011126
(2012).
[53] W. M. Itano, D. J. Heinzen, J. J. Bollinger, and D. Wineland,
Phys. Rev. A 41, 2295 (1990).
[54] P. Facchi and S. Pascazio, Progress in Optics, 42, 147
(2001).
[55] P. Talkner, E. Lutz, and P. Hanggi, Phys. Rev. E 75, 050102
(2007).
[56] A.A. Clerk, M.H. Devoret, S.M. Girvin, F. Marquardt, and
R.J. Schoelkopf, Rev. Mod. Phys. 82, 1155 (2010).
[57] A. Papoulis, Probability, Random Variables, and Stochastic
Processes (McGraw-Hill Book Company, New York, 1965);
see pp. 343-ff therein.
[58] H. B. Callen and T. Welton, Phys. Rev. 83, 34 (1951).
[59] J. Des Cloizeaux, Linear response, generalized susceptibil-
ity and dispersion theory, In: Theory of condensed matter, F.
Bassani, G. Cagliotto, J. Ziman, eds. (International Atomic
Energy Agency, Vienna 1968), pp. 325 -- 354.
[60] P. Hanggi and G. L. Ingold, Chaos 15, 026105 (2005).
[61] W. M. Visscher, Phys. Rev. A 10, 2461 (1974).
[62] P. B. Allen and J. L. Feldman, Phys. Rev. B 48, 12581
(1993).
[63] S. Liu, P. Hanggi, N. Li, J. Ren, and B. Li, Anomalous heat
diffusion, arXiv:1306.3167.
Copyright line will be provided by the publisher
|
1502.02938 | 2 | 1502 | 2016-03-15T08:39:45 | Time correlators from deferred measurements | [
"cond-mat.mes-hall",
"quant-ph"
] | Repeated measurements as typically occurring in two- or multi-time correlators rely on von Neumann's projection postulate, telling how to restart the system after an intermediate measurement. We invoke the principle of deferred measurement to describe an alternative procedure where co-evolving quantum memories extract system information through entanglement, combined with a final readout of the memories described by Born's rule. The new approach to repeated quantum measurements respects the unitary evolution of quantum mechanics during intermediate times, unifies the treatment of strong and weak measurements, and reproduces the projected and (anti-) symmetrized correlators in the two limits. As an illustration, we apply our formalism to the calculation of the electron charge correlator in a mesoscopic physics setting, where single electron pulses assume the role of flying memory qubits. We propose an experimental setup which reduces the measurement of the time correlator to the measurement of currents and noise, exploiting the (pulsed) injection of electrons to cope with the challenge of performing short-time measurements. | cond-mat.mes-hall | cond-mat | a
Time correlators from deferred measurements
D. Oehri,1 A.V. Lebedev,1 G.B. Lesovik,2 and G. Blatter1
1Theoretische Physik, ETH Zurich, CH-8093 Zurich, Switzerland
2L.D. Landau Institute for Theoretical Physics, RAS, 142432 Chernogolovka, Russia
(Dated: October 16, 2018)
Repeated measurements as typically occurring in two- or multi-time correlators rely on von Neu-
mann's projection postulate, telling how to restart the system after an intermediate measurement.
We invoke the principle of deferred measurement to describe an alternative procedure where co-
evolving quantum memories extract system information through entanglement, combined with a
final readout of the memories described by Born's rule. The new approach to repeated quantum
measurements respects the unitary evolution of quantum mechanics during intermediate times, uni-
fies the treatment of strong and weak measurements, and reproduces the projected and (anti-)
symmetrized correlators in the two limits. As an illustration, we apply our formalism to the calcu-
lation of the electron charge correlator in a mesoscopic physics setting, where single electron pulses
assume the role of flying memory qubits. We propose an experimental setup which reduces the mea-
surement of the time correlator to the measurement of currents and noise, exploiting the (pulsed)
injection of electrons to cope with the challenge of performing short-time measurements.
PACS numbers: 03.65.Ta, 73.23.-b
I.
INTRODUCTION
Within the quantum world, the question what quan-
tities can be measured in an experiment is often a
non-trivial one, e.g., measuring time correlators (with
times τj) requires finding the correct ordering of op-
erators.
Concrete examples in mesoscopic physics
and quantum optics are the measurements of charge
correlators1 -- 4 or full counting statistics5 -- 7 and that of
photon correlators8,9. The question is usually resolved
by including the measurement apparatus in the descrip-
tion and its internal workings decide upon the form of the
measured correlator. Examples are the Amp`eremeter,
double-dot detector, and spin counter used in Refs. 1,
3, and 5, or the different photodetectors introduced by
Glauber and by Mandel10. These detectors then act back
on the system, thereby influencing the measurement out-
come, i.e., the specific form of the correlator. E.g., a
weak measurement as used in Ref. 1, see also Ref. 11,
response functions2,12, while a strong measurement pro-
leads to symmetrized (RS(τ1, τ2)) and antisymmetrized
(IS(τ1, τ2)) correlators weighted with different detector
duces a projected correlator SP(τ1, τ2).
at times τj< τn in a n-th order correlator). The measure-
These different forms of measured correlators can
be derived13 by invoking the von Neumann projection
postulate14, telling how to restart the system after the
first measurement at τ1 (or after previous measurements
ment with a weakly coupled detector can be treated per-
turbatively, with the von Neumann projection excerted
on the detector and no back action on the system1. In
a strong measurement with a large system -- detector cou-
pling, the projection formally can be applied directly to
the system, therefore producing a maximal back action13.
In this paper, we invoke the principle of deferred
measurement15 known from quantum information theory,
cedures for a two-time (τ1, τ2 > τ1) correlator: (a) strong
FIG. 1: Schematic illustration of different measurement pro-
measurement described by von Neumann projection acting
directly on the system at time τ1 and providing a projected
correlator SP after readout at τ2; for a weak measurement,
the von Neumann projection at time τ1 acts on the weakly
coupled detector.
(b) Repeated measurement without von
Neumann projection at τ1: unitary co-evolution of system
and quantum memories which are entangled at times τ1 and
τ2 and final readout after τ2. The coupling strength between
the system and the quantum memories determines the degree
of entanglement.
where it can be used for quantum computing, and apply
it to the problem of repeated measurements, specifically,
of time-correlators. We replace the von Neumann projec-
tion by entangling the measured system with co-evolving
quantum memories, see Fig. 1, thereby (effectively) ex-
panding the Hilbert space of the total system in every
measurement step. The desired correlator then is de-
rived from a final measurement of all the quantum mem-
ories by invoking Born's rule16. Hence the entire system
plus memories undergoes a unitary quantum evolution
until the very end, where the Born rule takes us from the
quantum to the classical world. The new scheme cap-
(b)SysMemMemSys11ττ22(a) tures the cases of weak and strong measurement within
a unique formalism by merely changing the degree of en-
tanglement between the system and the quantum mem-
ory. In the limits of weak and strong entanglement, we
reproduce the results previously derived via use of the
projection postulate. No simple physical form for the
time-correlators could be found so far in the intermedi-
ate coupling regime.
Describing a measurement by entangling the system
with a detector and including a (dissipative) bath in the
evolution of the density matrix is a concept that has been
well developed over the past two decades17 -- 20. Here, we
extend the idea of system -- detector entanglement to the
case of repeated measurement. Thereby, the quantum
memories evolve coherently during and after the infor-
mation transfer from the system due to entanglement,
with the (dissipative) measurement deferred to the very
end of the process.
The proposed scheme for the measurement of time-
correlated observables finds an interesting application in
mesoscopic physics. In particular, measuring the charge
Q dynamics of a quantum dot with the help of a nearby
quantum point contact is a classic problem by now21. In
such a setup, single electron pulses5,22 assume the role of
flying qubit memories which are either transmitted or re-
flected by the quantum point contact (QPC), depending
on the dot's charge state, see Fig. 2. Analyzing the charge
transmitted across the QPC then provides the desired in-
formation on the dot's charge correlator. Making use of
recent developments in electron quantum optics23,24, we
propose a setup, see Fig. 3, that shifts the task of re-
solving short times, typically done on the level of the
detection, to the proper timing of electron pulses and
gate operations.
a system observable O with an eigenbasis{n} that is to
We briefly sketch the main idea of the paper: Consider
be measured. We start with a system state at the initial
time τin
ψ(τin)=Q
ψn(τin)n
and a quantum memory in the initial state φ
n
(1)
in and
(1)
have them transiently interact at time τ1 with the help
of an externally controlled interaction (to be identified
with a quantum detector). The system and memory then
become entangled,
Q
ψn(τ1)n(cid:6)φ
whereφ(1)
n denote memory states after interaction with
the system in staten and we assume a negligible evolu-
ψn(τ1)nφ
in→Q
n ,
(1)
(1)
(2)
n
n
Q
tion of the system during the time of interaction. Evolv-
ing the system to the later time τ2 and entangling it with
a second memory, we obtain the state
Umn(τ21)ψn(τ1)mφ
n φ
(1)
m,
(2)
with Umn(τ) the matrix elements of the system propa-
gator U(τ) and τ21 = τ2− τ1. The unitary evolution of
(3)
m,n
2
the memory states φ(j)
n preserves the system informa-
tion gained at times τj. At time τfin> τ2 we measure the
memory observables a(1) and a(2) with discrete spectra
a(1,2)
α . Making use of Born's rule, we find the probability
distribution function Pαβ for the measurement outcomes
α and β on the two memory observables; this proba-
bility distribution contains the desired information on
the system's two-time correlator. The specific relation
between the distribution function Pαβ of measurement
outcomes and the correlator of system observables O(τ1)
and O(τ2) depends on the system -- detector coupling and
the observables measured on the memories; we will show
below how to extract the well known (anti-)symmetrized
and projected correlators from the probabilities Pαβ in
the limits of weak and strong measurements.
In the end, by making use of quantum memories which
store the information acquired from the system at the
quantum level at earlier times τ1 and τ2 until the final
time τfin, we have avoided the intermediate readout which
requires the use of the projection postulate. Hence the
entire measurement process follows a unitary quantum
evolution until the transition to the classical world is done
via Born's rule.
In the following, we will first derive the general frame-
work describing the deferred measurement of a correlator
with the intermediate von Neumann projection replaced
by a system -- detector entanglement (Sec. II). In Section
II A, we discuss the limit of weak measurement and use
qubits as quantum memories to arrive at a simple re-
lation between the measurement outcome on the qubits
and the (anti-) symmetrized correlators of the system.
In Sec. II B, we first discuss a strong measurement at
strong coupling using qudit memories and then invoke
(weakly coupled) qubit registers to show that both types
of strong measurements produce the projected time cor-
relator of the system. An illustration of our formalism is
given in Sec. III, where we describe the measurement of
the charge correlator in a mesoscopic setting, specifically,
the two-time charge correlator of a quantum dot (QD) as
measured by a quantum point contact (QPC). Sec. III E
describes a possible experimental implementation and in
Sec. IV we summarize our results.
II. CORRELATOR MEASUREMENTS BY
QUANTUM MEMORIES
(j)
given by Eq. (1), while the memories are described by
We consider the situation where a two-time correla-
tor of a system operator O is measured with the help of
two quantum memories; the system's initial stateψ is
in, j= 1, 2 (see below for the discussion
initial statesφ
ing memory statesφ(j)
in depend on the system
state n, where un describes the time evolution of the
of an open system described by a density matrix ρ). The
memories interact with the system at times τ1,2 during a
small time intervall δτ . After this interaction, the result-
n = unφ
(j)
quantum memories during the interaction with the sys-
l,m,n
(1)
(2)
n φ
tem (we assume a trivial evolution of the free memories).
to keep their system information after their interaction.
Ulm(τf 2)Umn(τ21)ψn(τ1)lφ
remain unchanged during the time δτ of the individual
interaction events, see Sec. III C for an extended discus-
sion of this point. After the second interaction event at
The system state ψ(τ) = ∑n ψn(τ)n is assumed to
τ2, the wave functionψ(τfin> τ2) of the system is en-
tangled with the states φ(j)
n of the memories and the
combined wave functionΨf reads
m, (4)
Ψf= Q
with τf 2= τfin− τ2. The quantum memories are supposed
At time τfin, we measure the operators a(1) and a(2) on
nϕ(j)
n =∑α sα
ϕ(j)
α , we rewrite the memory statesφ(j)
α .
(discrete) eigenvalues and eigenstates of a(j) by a(j)
Pαβ(τ21)=Ψfp
β Ψf,
α =ϕ(j)
α ϕ(j)
α . Making use of the
where p(j)
lm′ = δmm′ (rendering the
unitarity condition ∑l UlmU∗
j-th memory, i.e., p(j)
evolution Ulm(τf 2) in Eq. (4) irrelevant), we obtain the
mUmn(τ21)sα
Q
Pαβ(τ21)=Q
the first and second memory, respectively. Denoting the
α and
Applying Born's rule to the final state (4) provides us
with the probability distribution
α is the projector onto the eigenstate α of the
nψn(τ1)2
Pαβ(τ21) provide us with the desired information on the
The above expressions (5) and (6) for the probabilities
(2)
(1)
α p
probabilities
(5)
(6)
sβ
m
n
.
(1)
(1)
(2)
(2)
two-time correlator of the system. They are easily gen-
eralized to the case of open systems by introducing the
combined system plus bath (the open system) density
matrix ρ and evolve it in time including the subsequent
entanglement with the quantum memories: Starting from
the initial density matrix ρ0⊗φ
in⊗φ
in de-
inφ
inφ
scribing the open system plus memories at time τin, we
proceed as in the case of isolated systems by condition-
ing the time evolution of the memory states on the corre-
sponding system states and obtain the final density ma-
trix at time τf
Ukm(τf 2) Umn(τ21) ρnn′(τ1) U
ρf= Q
n′m′(τ21) (7)
m′,
mφ
n′⊗φ
n φ
× U
m′k′(τf 2)kk
k,k′,n,n′,m,m
with the open system's density matrix ρ(τ1) at time τ1,
its reduced part ρnn′(τ1)=nρn′, and the reduced op-
erators Uil=i Ul with U the evolution operator of the
open system. Note that here, the outgoing statesφ
n(′)
m(′) are conditioned on the system states n(′) and
andφ
(1)
m(′) at times τ1 and τ2. We define the probabilities Pαβ
′⊗φ
(2)
(2)
(1)
(1)
(2)
†
†
as
Pαβ(τ21)= Trp
β ρf(cid:6)
(2)
(1)
α p
(8)
with the trace taken over both the open system and the
memory states. Calculating this expression with the final
density matrix Eq. (7), we obtain
Pαβ(τ21)= Q
n,n′,m
Trsβ
m
Umn(τ21) sα
n ρnn′(τ1)
m(cid:6),
n′m(τ21) sβ∗
× sα∗
n′ U
†
3
(9)
with the remaining trace taken over the bath degrees of
freedom. This result is the direct generalization of (6) to
the case of open systems. The expressions (5) and (6) as
well as (8) and (9) constitute the basic formulas which
we will further develop in the following sections. Indeed,
as expressed in terms of evolution amplitudes of system
and detectors, it is difficult to appreciate the physical
meaning and content of these results. In order to make
progress, we consider next the two cases of weak and
strong measurements.
A. Weak measurement
Given a weak system -- detector coupling, the most direct
way to find the probabilities Pαβ in terms of physically
transparent quantities is to start from Eq. (5) and eval-
uate this expression perturbatively in the linear system --
detector coupling Hsd = ∑j
b(j)(τ) O, where the time-
dependent coupling b(j)(τ) acts on the j-th memory dur-
(2)
ing a time δτ around τj. The unperturbed evolution of
the memories is described by the Hamiltonian h0 and we
make use of the interaction representation. We go over
to irreducible quantities by subtracting the uncorrelated
contribution,
αβ= Pαβ− P
f p(1)
α Ψ
f and P
P irr
(1)
(1)
α P
(2)
β
P
(10)
(2)
(1)
(2)
(1)
(2)
Pαβ,
f de-
f p
β =Ψ
β Ψ
scribing measurements involving a single entanglement
at time τ1 or τ2 with only one memory, respectively. The
α can be obtained by a simple summation of
α =Ψ
with P(1)
quantity P(1)
α =Q
α = P(1)
and P(2)
erwise, the determination of P(2)
for a time-independent problem (oth-
α necessitates a second
β ≠∑α Pαβ.
measurement). Note that the sum over the first index of
(2)
Pαβ already includes correlations, see Eq. (6), and hence
P
αβ=Ψ U
β (τf) UD(τf , τin)Ψ, (12)
system stateψ(τin), ⋅ refers to the irreducible part,
with the expectation value to be taken over the initial
The task then is to evaluate the irreducible expression
D(τf , τin)p
α (τf)p
Pαβ,
P irr
(2)
(1)
(11)
α
β
†
and the time evolution operator reads
UD(τf , τin)=T exp− iŏh
S τf
τin
′ Hsd(τ
′),
dτ
(13)
withT denoting time-ordering. Evaluating (12) to lowest
relevant order in the coupling, we find
4
P irr
αβ=(−i)2ŏh2 S τf
=(−i)2ŏh2 S τ
τin
τin
dτ
dτ
dτ
dτ
′
′S τ
′S τ
τin
′
τin
(1)
′′Ψ[[p
′′ψ O(τ
−ψ O(τ
−ψ O(τ
+ψ O(τ
α (τf)p
′) O(τ
′′) O(τ
′) O(τ
′′) O(τ
(2)
(1)
(1)
β (τf), Hsd(τ
′)], Hsd(τ
′′)]Ψ
′′)ψφ
(1)(τ
α (τf)b
inp
′′)φ
inφ
′)φ
(2)(τ
β (τf)b
inp
in
′)ψφ
(1)(τ
inb
′′)p
α (τf)φ
inφ
′)φ
(2)(τ
in ip
β (τf)b
in
′′)ψφ
in ip
α (τf)b
(1)(τ
′′)φ
inφ
inb
(2)(τ
′)p
β (τf)iφ
in
in(cid:6),
inb
′)p
inb
inφ
′′)p
′)ψφ
β (τf)φ
(2)(τ
α (τf)φ
(1)(τ
Hsd(τ)= Ω(τ)σx O, where the coupling Ω(τ) is switched
(2)
(2)
(2)
(2)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
(2)
(1)
(1)
(1)
(1)
(2)
(2)
(1)
(1)
(2)
(2)
(14)
(j)
(17)
(16)
(15)
(2)
(1)
(2)
(1)
P irr
anti-commutator)
to arrive at the final result
with the detector response functions
where we made sure that the first memory interacts with
the system at the earlier time τ′′. For a slow system dy-
namics and exploiting that b(j)(τ)φ
in≠ 0 only for τ≈ τj,
we can replace O(τ′′) → O(τ1) and O(τ′) → O(τ2).
(with[⋅,⋅] and{⋅,⋅} denoting the usual commutator and
We make use of the standard definitions for the sym-
metrized and anti-symmetrized irreducible correlators
OO(τ1, τ2)={ O(τ1), O(τ2)}~2,
RSirr
OO(τ1, τ2)=−i[ O(τ1), O(τ2)],
ISirr
αβ(τ21)=IS
det,αIS
OO(τ1, τ2)
det,βRSirr
det,αIS
+RS
OO(τ1, τ2),
det,βISirr
dτφ
α (τf), b(τ)}φ
in{p
in,
RS
det,α=− 1
S τf
2ŏh
det,α=−iŏh
in.
in[p
dτφ
α (τf), b(τ)]φ
IS
S τf
The symbols R and I address symmetrized and anti-
RSirr
OO andISirr
obtainsRSirr
OO=[RS
ISirr
OO=[−IS
with D(1) = RS
In a situation where the full information Pαβ can be
extracted from the memories, the individual correlators
OO can be obtained from (17) by combining
¯αβ one
(1)
det, ¯α. Alterna-
tively, one may have preferential access to combinations
of probabilities Pαβ (see Sec. III E for an example) or
make use of specific detector properties, see below and
the appendix for examples.
αβ−RS
αβ+IS
det,α−RS
det, ¯αIS
symmetrized quantities (or equivalently, up to factors of
2, real- and imaginary parts).
¯αβ]~D
(1)IS
¯αβ]~D
(1)IS
det,αIS
(1)
det, ¯αP irr
(1)
det, ¯αP irr
(1)
(1)
det,αP irr
(1)
det,αP irr
(1)
two different probabilities, e.g., using P irr
(2)
det,β, (20)
(2)
det,β, (21)
(j)
(j)
(j)
(j)
αβ and P irr
(j)
(j)
(1)
(18)
(19)
(j)
(j)
τin
τin
A generic choice for the quantum memories are qubit
devices that couple to the system via the Hamiltonian
(j)ϕ1]~√
φ
in=[ϕ0+ eiθ
(j)
on during a short time δτ around τj. Assuming initial
states
.
,
,
τin
2,
(j)
(j)
(j)
(j)
(j)
(22)
(25)
(24)
(23)
(j)
(j)
(j)
(j)
(j)
(j)
volve integrals of the type
and we obtain the response functions
OO) from the memory correlator P irr
will rotate the qubit around the x-axis by δϑ On with
in= δϑ ei(1−2α)θ
inpα(τf)Ω(τ)σxφ
, RS
det,1= δϑ cos θ
det,1=−2δϑ sin θ
IS
a system residing in a state n with eigenvalue On
δϑ = Ωδτ~ŏh. The response functions (18) and (19) in-
dτφ
S τf
RS
det,0= δϑ cos θ
IS
det,0= 2δϑ sin θ
Choosing θ(2) = π~2,
OO (ISirr
tor RSirr
choosing θ(1)= π~2 (θ(1)= 0). Alternatively, we may use
the results (20) and (21) and θ(1)= θ(2)= π~4 to find (we
choose α= 0, ¯α= 1, and β= 0)
OO= P irr
RSirr
OO=− P irr
ISirr
00 + P irr
i.e., polarizing the second mem-
ory along the y-axis, we can directly find the correla-
αβ by
Note that the sums P irr
01 contain
very different types of information, once a correlation, the
other time only a mean value, as discussed in more detail
in Sec. III E. Hence, we find that the delayed measure-
ment of the two quantum memories provides the sym-
metrized and anti-symmetrized correlators (15) and (16).
Finally, we note that a weak linear coupling between
the system observable and the detector/memory variable
canonically conjugated to the detector readout provides
a more effective entanglement. Such a von Neumann like
interaction allows to produce a strong entanglement and
a strong measurement even for weak coupling if sufficient
time is available for the entanglement process25.
00 − P irr
00 + P irr
00 + P irr
10 and P irr
2δϑ2
4δϑ2
(26)
(27)
10
10
,
.
B. Strong measurement
αn
(j)
(j)
(j)
(j)
(29)
(28)
,
φ
φ
We are now going to show that a strong system --
detector coupling naturally leads to projective correla-
tors. Consider a situation where the system operator O is
measured via entanglement with two quantum memories.
We first consider an operator O with a non-degenerate
spectrum and comment on the general case in the end. A
strong coupling between the system and the memory im-
plies that the memory statesφ(j)
n after interaction with
the system in staten are fully distiguishable, i.e,
mφ
n = δnm.
statesϕ(j)
α and we assume a one-to-one relation with the
The observables a(j) distinguish between memory eigen-
evoluted memory statesφ(j)
n ,
n =ϕ
with αn≠ αm for n≠ m (otherwise, the observable a(j)
m= δββm for the second
measures linear combinations of eigenstates of O and thus
is not suitable for a measurement of this observable). Un-
der these (strong coupling) conditions, the amplitudes sα
n
reduce to sα
memory). In order to describe the strong coupling situ-
ation it is favorable to proceed with the expression (6)
and we obtain the result
n= δααn (for j= 1, sβ
Pαnβm(τ21)=Umn(τ21)ψn(τ1)2
l Pm(τ2) Pn(τ1)ρ0 Pn(τ1)l
(τ21)=Q
=Umn(τ21)ψn(τ1)2,
with the projected density matrix ρP(τ1) = ∑k
Pk(τ1)
ρ0 Pk(τ1) and the projectors Pk = kk onto different
(τ21) are easily combined into the desired two-time
system states, see Eq. (1). The projected correlators
SP
correlator SP
The right hand side of the above expression is nothing
but the projected system correlator
(30)
(31)
PnPm
PnPm
SP
.
l
OO(τ21)
OO(τ21)= Tr[ O(τ2) O(τ1)ρP(τ1)]
(τ21)
OnOmPαnβm(τ21),
=Q
=Q
OnOmSP
PnPm
nm
SP
(32)
nm
thereby establishing the general result relating the sys-
tem correlator to the memory readings. A further sim-
O obey a linear relation On= η(j)a(j)
plification can be achieved if the eigenvalues of a(j) and
(2),
OO(τ21)=Q
= η
Pαnβm(τ21)
obtain the simple result
, in which case we
(2)a
(1)
(1)
(1)
(2)
(2)
(1)
(33)
SP
nm
βm
αn
αn
a
a
a
η
η
η
5
The system evolution of
directly relating the projected system correlator to the
These results can easily be generalized to the case
where the observable O involves a degenerate spec-
trum:
is
conditioned on the eigenvalue On rather than the
memory correlatora(1)a(2).
state n of the system. Degenerate eigenstates pro-
to be replaced by PαOβO′(τ21) =
Pαnβm(τ21) has
∑{mOm=O′}∑{nOn=O} Umn(τ21)ψn(τ1)2 and ρP(τ1) is
PO(τ1)ρ0 PO(τ1) with the projection
substituted by ∑O
operator PO = ∑{nOn=O}nn. With these replace-
duce equal evolutions of the memories,
the memories
implying that
ments, the above results remain valid also for a degener-
ate spectrum.
Hence, the perfect entanglement between the system
and the memories arising due to strong coupling is equiv-
alent to a von Neumann projection applied to the system.
While no back action is apparent on the level of the sys-
tem dynamics, the strong back action of this maximal en-
tanglement with the memories manifests itself in a strong
change of the systems density matrix when tracing over
the memories.
above requires equal or more memory states ϕα than
system statesn, hence quantum memories with dimen-
The realization of a strong measurement as described
sionality d or qudits are required. Besides the obvious
difficulty in realizing qudit memories, their coupling to
the system in order to serve as a measurement device is
equally nontrivial. As an alternative, we discuss a mea-
surement scheme involving qubit registers, instead.
Such an alternative setup implementing a strong mea-
surement involves a weak system -- detector coupling but
invokes multiple measurements. We replace the strongly
coupled qudit memories by weakly coupled qubit regis-
ters with J qubits each, probing the system state close
to τ1 and τ2 within a short time interval δτ . For a strong
measurement, J is chosen sufficiently large to distinguish
the different eigenvalues On of the system. Assuming the
system not to change during the interaction time Jδτ
with one register, the final state of system and memory
registers is of the same form as in Eq. (4) with the out-
going individual memory statesφ(1)
n andφ(2)
m replaced
by the outgoing register states Φ(1)
n and
j=1φ(j)
n = ∏J
Φ(2)
m=∏2J
m. Making use of Born's rule, we ob-
j=J+1φ(j)
αβ(τ21) for finding µ (ν) qubits of
the first (second) register in states α∈{0, 1} (β∈{0, 1}),
(sβ
Q
Q
J
αβ=J
m)J−νUmn(sα
m)ν(s
n)J−µψn2
n)µ(s ¯α
n= s1−β
n= s1−α
sα
α(n)=J
n2(J−µ) for measuring µ
n2µs ¯α
system in staten, we can separate the system- and de-
n′]P µ
[UmnψnU
αβ= Q
α(n, n
∗
∗
mn′ ψ
n,n′,m
with s ¯α
probability P µ
of the J qubits in the state α after interaction with the
tector response in the above equation,
n . Introducing the conditional
′)P ν
β(m)
tain the probabilities P µν
m
and s ¯β
P µν
P µν
(34)
µ
ν
¯β
n
n
µ
,
P µ
(j)
p
α
(35)
(j)
states.
µ,ν
νP ν
(j)
p
µP µ
n,m
µ
ν
nsα
µ
with
P µ
P µ
the
'off-diagonal'
(sα
conditional
ns ¯α
probabilities
(note
that
µνP µν
αβ
β(m).
around the x-axis, the evolution
α(n)P µ
n′∗)µ(s ¯α
n′∗)(J−µ)
In the non-degenerate case (i) and for a strong
two cases: (i) all system eigenvalues are non-degenerate,
measurement, the probability distributions P µ
P µ
tions of µ (this is the very definition of this measure-
ment being a strong one) and the 'off-diagonal' ele-
ments P µ
J
=
α(n, n′)
α(n, n)= P µ
α(n)). The conditional probabilities P µ
α(n)
depend only on the eigenvalue On of the staten (and
not on the staten itself). We then have to distinguish
i.e., On≠ On′ for n≠ n′, (ii) there are degenerate system
α(n) and
α(n′) for different n ≠ n′ do not overlap as func-
α(n, n′) for n′ ≠ n are suppressed, as follows
α(n, n′)=
α(n′). We then
from the relationP µ
αβ ≈
∑n,mUmnψn2P µ
β(m). The register correlators
α(n)P ν
Sαβ(τ21)=Ψf JQ
2JQ
j=1
j=J+1
Umnψn2Q
= Q
Assuming again a linear system -- qubit coupling Hsd(τ)=
Ω(τ)σx O that rotates the qubits by an angle δϑ On
β Ψf=Q
α(n)Q
can simplify the expression (34) to the form P µν
(replacing the distribution functions Pαβ) take the form
again assume initial states polarized in the xy-plane, see
With the qubits initially polarized along the y-axis, i.e.,
un= cos(δϑ On) −i sin(δϑ On)
cos(δϑ On)
n = unφ
i sin(δϑ On)
produces the memory states φ(j)
in, where we
(22). The probabilities Pα(n) for an individual qubit to
reside in state α= 0, 1 are given by
+(1− 2α)δϑ On sin θ.
P0(n)= 1− P1(n)≈ 1
θ(j)= π~2, we define the register's 'magnetizations'
1(n)]= 2Jδϑ On,
µ[P µ
M(n)=Q
0(n)− P µ
combination S11− S10− S01+ S00 then involves the prod-
uct of register polarizations M(n)M(m) and using the
OO(τ21)=∑nm OnOmUmnψn2, see Eq. (32),
OO(τ21)= S11− S10− S01+ S00
Note the normalization S11+ S10+ S01+ S00= J 2, which
follows from replacing M(n)=∑µ µ[P µ
0(n)− P µ
1(n)] by
Σ(n)=∑µ µ[P µ
1(n)]=µ0+µ1= J.
0(n)+ P µ
separate only for states with different eigenvalues On≠
relation SP
we can relate the system correlator to the register corre-
lators via
where we have made use of (37) in the last equation. The
In the degenerate case (ii), the distribution functions
.
(39)
(36)
(37)
(38)
SP
4J 2δϑ2
2
µ
6
αβ then are given by
α(n, n′) ∼ 0, while for degenerate
eigenvalues with On= On′, P µ
α(n, n′)= P µ
α(n). The prob-
On′, implying that P µ
α(n)P ν
n′]P µ
β(m).
Q{n′On′=On}[UmnψnU
αβ≈ Q
abilities P µν
∗
∗
mn′ψ
On the other hand, the projected density matrix ρP(τ1)
OO(τ21) involves the
projectors PO = ∑{nOn=O}nn, such that the result
appearing in the system correlator SP
P µν
m,n
(39) remains unchanged.
Summarizing, we have seen that the measurement
scheme invoking entanglement with quantum memories
and their delayed measurement provides us, in the weak-
and strong measurement limits, with the same results
as obtained via the traditional route using an intermedi-
ate von Neumann projection. Furthermore, these results
have been obtained within a unified description starting
from the same initial formula in the form (5) or (6).
The above general theoretical considerations are rather
non-trivial to implement in a practical situation, as the
preparation, entanglement, and measurement of many
quantum memories is often a non-trivial task. The im-
plementation of these ideas is less demanding, though
still challenging, when considering specific examples. In-
deed, quantum memories for delayed measurement are
naturally provided in a scattering geometry, where indi-
vidual scattered particles take the role of flying qubits.
In the following, we focus on a specific example in meso-
scopic physics, the measurement of a charge correlator of
a quantum dot by scattering electrons in a nearby quan-
tum point contact. We first analyze the situation for a
simple two-state system with charges Q= ne, n= 0, 1,
and then extend these considerations to arbitrary charge
states.
III. CHARGE CORRELATOR MEASUREMENT
We consider a classic problem21, the charge Q dynam-
ics of a quantum dot (QD) (attached to leads or coupled
to another dot in an isolated double-dot system) mea-
sured by a nearby quantum point contact (QPC), see
Fig. 2 and Ref. 13 for a recent discussion of this sys-
tem. Here, we want to characterize the dot's dynamics by
its two-time charge correlator. In this system, the mea-
surement is executed by the electrons which are trans-
mitted across/reflected by the QPC with probabilities
that depend on the dot's charge state. For the present
discussion, it is convenient to view the QPC current as
a sequence of individual electron pulses; during recent
years, this theoretical idea5,26,27 has progressed to an ex-
perimental reality22 -- 24, opening the new field of electron
quantum optics28. The quantum memories then can be
viewed as flying qubits, individual electron pulses arriv-
ing at the QPC at times τ1 and τ2 that probe the charge
state of the QD through the capacitive coupling between
the QD and the QPC, see Fig. 2.
7
Second, we generalize the discussion to a QD with mul-
tiple charge states as described by the charge operator
Q = ∑n Qnnn. While two-state quantum memories
(qubits) are always sufficient for a complete description
when the measurement is weak, for a strong measure-
ment, a QD with multiple charge states will require the
use of qubit registers, i.e., finite trains of electron pulses.
A. Weak measurement
τin
†
†
corrections δT , δθ, and δχ.
T− δT ei(θ+δθ), r1=√
more, we parametrize the scattering matrices for the sys-
R eiχ,
It remains to determine
ues α, β equal to r and t.
the detector response functions (19) and (18). We con-
For the case of a weak measurement, we can make
immediate use of the general results Eqs. (17), (20),
and (21) by replacing O → Q and choosing the val-
sider a linear system -- detector coupling of the form Hsd=
e2 q Q~C = v Q with q the charge on the QPC. Further-
tem in states 0 and 1 by t0 = √
T eiθ, r0 = √
t1=√
R+ δT ei(χ+δχ), with small
gral (−i~ŏh)∫ τf
dτφinpα(j)(τf)v(τ)φin (we drop the
In order to find the detector response functions (18)
and (19) we replace b by v and determine the inte-
memory index (j) as the electrons are scattered by the
ten in the formφinu
0 pα u0φin with
u0= e−ih0(τf−τin)~ŏh and u1= e−i(h0+v)(τf−τin)~ŏh describing
respectively. Furthermore, we have used that u1= u0 uD
the dynamics of the detector in the Heisenberg represen-
tation in the absence and presence of a charge on the dot,
0 pα u1φin−φinu
same QPC). To lowest order in v, this can be writ-
1 in δT , δθ, and δχ, we find that
dτ v(τ)~ŏh
uD=T exp−iS τf
and v(τ) in the interaction representation. The initial
memory statesφin evolve under u1 and u0 according to
unφin=φn and henceφinu
m pα unφin=φmpαφn=
n, where we have used that pα=ϕαϕα. Expand-
sα∗
−iŏh
S τf
−iŏh
S τf
final resultsRSdet,t= T δθ, RSdet,r= Rδχ,
ISdet,r= δT.
dτφinpt(τf)v(τ)φin=− 1
dτφinpr(τf)v(τ)φin= 1
δT+ iT δθ,
δT+ iRδχ,
ISdet,t=−δT,
and taking real and imaginary parts, we arrive at the
m sα
ing sα
(43)
(44)
with
τin
τin
(41)
(42)
2
2
τin
†
(40)
Using these detector response functions in the general
expressions (20) and (21) one easily arrives at the system
(j)
(j)
positions on the right of the QPC, provides information on
the two-time charge correlator.
FIG. 2: Quantum dot system (QD) measured by a capaci-
tively coupled quantum point contact (QPC): Single-electron
pulses incident on the QPC from the left (at τin) are either
transmitted (with amplitude t) or reflected (amplitude r); the
outgoing Lippmann-Schwinger wave functions describe flying
qubits without own dynamics and serve as quantum memo-
measure the two-time correlator of the dot's charge. After
scattering at the QPC, the two electrons (flying qubits) are
entangled with the quantum dot system and carry information
on its dynamics. Simultaneous detection of the two scattered
ries. Two pulses separated in time by τ2− τ1 are needed to
electrons (at τfin), e.g., a distance vF(τ2− τ1) away with both
The memory statesϕ(j)
α are the two scattered states
where the electron is reflected (α = r) or transmitted
(α = t),
i.e., the outgoing state is given by φ(j)
n =
tnϕ
t + rnϕ(j)
r with scattering coefficients tn↔ st
rn↔ sr
r,t emanating from the
lution of the scattered waves ϕ
information, in particular,φ(2)
n = 0. This allows us
mφ(1)
n and
n depending on the charge state of the system. We
assume well separated single-electron pulses and an evo-
QPC at times τj that preserves the corresponding system
to envision an individual detection of the electrons24,29.
In the final readout, the flying qubits are detected on
the right or left side of the QPC, telling whether the two
electrons have been transmitted (with probability Ptt),
reflected (Prr) or mixed (Ptr and Prt). These probabil-
ities then contain the information about the two-time
charge correlator of the QD.
Formally, such a final-state analysis corresponds to
α , with
measuring the (charge) operators a(j)=∑α a(j)
α =ϕ(j)
α providing the transmit-
α ϕ(j)
α p(j)
ted (α= t) or reflected (α= r) components of the j-th
the projectors p(j)
t = 1 and a(j)
r = 0 if the transmitted charge
electron. The eigenvalues a(j)
r = 1 and
(j)
t = 0 if the reflected charge is measured on the left.
is measured on the right of the QPC, while a(j)
(j)
probability distributions (5) or (6) with α, β= r, t.
binary charge states0 and1 and eigenvalues Q0= 0,
Q1 = 1, Q = 11 (defined in units of e) and an ini-
tial state ψ(τin)= ψ0(τin)0+ ψ1(τin)1, see Eq. (1).
a
Both types of measurements provide us with the same
In the following, we first analyze the case of a QD with
α depend on the measured
charge, e.g., a
1221τfin(τ −τ )21vFQDin21QPCτQPCQD ,
rt
rt
(46)
(45)
P irr
QQ.
QQ or ISirr
Alternatively, the QPC can be tuned to deliver the
Indeed,
using a detector with high transmission, e.g., a QPC with
correlators (we choose α= t, ¯α= r, and β= t),
QQ= R(δχ~δT) P irr
tt − T(δθ~δT) P irr
RSirr
δT(Rδχ+ T δθ)
tt + P irr
ISirr
QQ=−
δT(Rδχ+ T δθ) .
individual system correlators RSirr
energetic (E) single-electron pulses Eâ V0, V0 the QPC
barrier, one easily finds that (although δTâδθ,δχ, we
have δTâ Rδχ)
RSirr
Eâ V0, the situation is reverse,RSdet,râISdet,r~tâ
RSdet,t, andISirr
tudes tn = √
1− Tneiχn of the QPC
Tn = T− QnδT , θn = θ+ Qnδθ, and χn = χ+ Qnδχ. A
RSdet,tâISdet,r~tâRSdet,r,
tβ measuresISirr
QQ (RSirr
Tneiθn and rn = √
rβ measures
QQ. When the detector predominantly reflects par-
ticles, e.g., for low energy single electron pulses with
tβ ),
see the appendix for further details on the QPC detector
response.
For a quantum dot with multiple charge states we have
to require that the expansion of the scattering ampli-
detector scale linearly in the charge Qn of the dot, i.e.,
QQ) is measured by P irr
and therefore P irr
QQ, while P irr
rβ (P irr
(47)
straightforward calculation then shows that the results
(43) and (44) for the detector response functions as well
as the final results (45) and (46) remain unchanged.
Similarly, the probability to find no charge on the dot in
either of the two measurements is Ptt =U00ψ02, while
the mixed results are Ptr=U10ψ02 and Prt=U01ψ12.
8
The strong measurement of the charge correlator for a
multi-charge quantum dot quite naturally involves trains
of electron pulses19, with the number J of electrons in
each train sufficiently large to distinguish the different
charge eigenvalues Qn of the dot. The separation δτ
between electron pulses within a train has to be suffi-
ciently long in order to allow for their separate detection
(i.e., counting), while the train duration J δτ must re-
main small on the scale τsys of the dot's dynamics.
µ[P µ
r(n)− P µ
When going over from qubit registers to electron trains
scattered at the QPC we replace the 'magnetization' (38)
by the disbalance between reflected and transmitted elec-
trons,
t(n)]= J[R− T+ 2QnδR], (50)
D(n)=Q
charge Qn, Rn= R+ QnδR. Operating the QPC at the
symmetry point T= R= 1~2, we can determine the com-
bination Srr− Srt− Str+ Stt and relate this quantity to
where we have assumed a linear QPC characteristic with
a reflection probability scaling linearly with the dot's
µ
the projected charge correlator SP
QQ(τ21),
QQ(τ21)= Srr− Srt− Str+ Stt
.
SP
Operating the QPC away from the symmetric point, one
has to determine the weighted sum T 2Srr− T R Srt−
RT Str+ R2Stt instead and divide by J 2δR2 to arrive
4J 2δR2
(51)
at the projected correlator SP
QQ.
B. Strong measurement
C. Finite-width memory wave-packets
When performing a strong measurement of a quantum
dot with a binary charge it is sufficient to invoke individ-
ual electron pulses as quantum memories. For a strong
dot -- QPC coupling, we require a one-to-one relation be-
tween the presence of a charge on the dot and the out-
come of the measurement, i.e.,φ0=ϕt andφ1=ϕr,
0= 0. This is achieved by
outcome withr1= 1,r0= 0 andt0= 1,t1= 0, i.e., the
presence of a charge Q1= 1 on the dot reflects the QPC
probability Prr(τ21) that directly traces the charge Q and
see Eq. (29), or sr
tuning the QPC such as to generate a unique scattering
electron back to the left. In this case, it is the reflection
1= 1 and sr
according to (6), we have to determine the expression
Prr(τ21)=Q
Q
rmUmn(τ21)rnψn(τ1)2
m
With rm = δm1, we obtain the simple result Prr(τ21)=
U11(τ21)ψ12 (see also (30) with n, m= 1 and α1= β1= r)
and since Qn= δn1, we find the projected correlator (see
(48)
n
.
(49)
Eq. (32))
QQ(τ1, τ2)= Prr(τ21)=U11(τ21)ψ12.
SP
time scale of the system. Here, we allow for a spread in
time of the detector's electron wave function and drop the
In
general terms, this corresponds to a measurement which
Above we have assumed an instantaneous (within a
short time δτ ) entanglement between the system and the
memory states, requiring that both the width τwp of the
wave-packet and the scattering time τsca at the QPC sat-
isfy τwp, τscaâ τsys, where τsys denotes the characteristic
condition τwpâ τsys, i.e., we assume that τwp࣠ τsys while
the scattering event itself remains fast, τsca â τsys.
probes the system sharply (τscaâ τsys) during some finite
time (τwp࣠ τsys; longer measurement times τwp> τsys do
tion f(j)(τ) which is normalized (∫ dτf(j)(τ)2= 1) and
Ψf=S dτ
′
× Q
Ulm(τ
m(τ
2),
′
(2)(τ
1)S dτ
(1)(τ
2)
′
′
′
21)ψn(τ
f 2)Umn(τ
1)lφ
′
′
′
Let us suppose that the j-th wave-packet incident
on the QPC around τj is described by the wave func-
peaked at the time τj. Assuming instantaneous scatter-
ing, we obtain the final state
n (τ
1)φ
′
not provide meaningful results).
(2)
(1)
(52)
1 f
2 f
l,m,n
f 2 = τf − τ′
21 = τ′
2− τ′
with τ′
2 and τ′
j) that have been scattered at the
n (τ′
memory statesφ(j)
j. Making use ofφ
n′(τ′′
j)φ(j)
n (τ′
j)= δ(τ′
j−
QPC at time τ′
j)φ
n′φ(j)
n , we obtain the smeared probabilities
τ′′
(j)
Pαβ(τ21)=S dτ
2f
(1)(τ
21) (53)
1)2f
(2)(τ
2)2Pαβ(τ
1S dτ
′
′
′
′
′
1 and the outgoing
(j)
with Pαβ given by Eq. (6). The finite width wave-packets
enter as integration kernels. While for sharp wave-
packets, the entanglement between system and memories
(i.e., the 'measurement') takes place at times τ1 and τ2,
for broader wave-packets, the entanglement arises within
a finite time τwp around τ1 and τ2 with distribution func-
2)2. As a consequence, for the
1)2 andf(2)(τ′
tionsf(1)(τ′
case of strong coupling where the entanglement gives rise
to projective measurements, the times of projection are
not fixed but distributed with the distribution functions
above.
Note that the result (53) is only valid for negligible
scattering time τsca in the QPC. If the scattering time
τsca is finite compared to the system time τsys, the effect
of interaction cannot be accounted for by the scattering
matrices sn of the QPC depending on the system state,
but the interaction during the scattering has to be treated
in more detail.
The limit of τscaâ τsys considered above has also im-
action for τsca â τsys only consists of dephasing, i.e., a
plications for the resulting back-action: While the back-
suppression of off-diagonal elements of the system's den-
sity matrix, for finite τsca, the back-action of the mea-
surement on the system goes beyond pure dephasing and
alters the system's dynamics.
D. Higher-order correlators
9
in Sirr
QQQ (encoded in σ) relate to opposite detector re-
sponse functions (encoded by ¯σ). This result agrees with
the one in Ref. 4 obtained with the help of the von Neu-
mann projection postulate and shows that only Keldysh
time-ordered charge correlators are measurable.
E. Experimental implementation
Our general concept of deferred repeated measure-
ments has been formulated with quantum memories, e.g.,
qubits, qubit registers, and qudits, see Sec. II. In our
application of these general considerations, the measure-
ment of a charge correlator with the help of a quantum
point contact (Sec. III), the quantum memories have been
replaced by scattered electrons (flying qubits). It then
is natural to seek for an experimental implementation,
where the final measurement of the quantum memories,
i.e., the scattered electrons, can be cast into a measure-
ment of currents and noise rather than an individual de-
tection of qubit states. Such an implementation is pro-
posed below.
By now, several experiments have demonstrated the
controlled generation of individual electron pulses22 -- 24
and even the detection of such pulses via qubit detectors
seems to be in reach29. A setup particularly well suited
within the current context is the one of Fletcher et al.23,
involving a single electron pump and a time-correlated
detector setup in a quantum Hall device, see Fig. 3 for
an illustration. Pairs of electron pulses of width∼ 100 ps
are injected at a typical rate νp∼(10 ns)−1 and are well
τsys∼ 100− 1000 ns. The detector involves a dynamically
suited to probe the dynamics of a dot with a system time
switchable barrier (dsb in Fig. 3) that can be switched
on or off with a nanosecond precision in time.
the single electron pump (with injection currents in the
We propose an experiment implementing a weak mea-
surement of a charge correlator along the lines of Sec.
III A, where electron pairs with a tunable delay time
in the range τ21= 10− 100 nanoseconds are injected by
I = 2eνp ∼ 10 pA regime) and scattered at the QPC
tector barrier dsb is switched on at a time τd+ τ21~2 in
probing the quantum dot QD. The transmitted electrons
arrive at the detector dsb after a delay time τd. The de-
t
(2)
(1)
order to let the first electron pass along the path 1 and
deflect the second electron along 2, see figure 3. With
the static barrier (ssb) closed, the measured currents I
t
and I
resulting from the transmission of the first and
second electron, respectively, can be related to the prob-
abilities Pαβ via
t ~eνp= Ptt+ Ptr,
t ~eνp= Ptt+ Prt.
The two sums∑β Pαβ and∑α Pαβ in the above equations
α Ψf for the (independent) transmis-
sion (α= t) or reflection (α= r) of the first electron by
ity P(1)
are fundamentally different in a subtle way: summing
over the second particle β produces the trivial probabil-
α = Ψfp(1)
(1)
(2)
(58)
(57)
I
I
(54)
(55)
sγ
l
m,n
nψn(τ1)2
its irreducible part can be recast in the form
l Ulm(τ32)sβ
The study of higher-order correlators is straightfor-
ward, e.g., to measure a third-order charge correlator,
we send three electrons scattering from the QPC at times
τ1< τ2< τ3 and obtain the probabilities
Pαβγ=Q
mUmn(τ21)sα
Q
describing electrons transmitted across (α, β, γ = t) or
reflected from (α, β, γ= r) the QPC. For weak coupling,
αβγ= Q
QQQ (τ1, τ2, τ3)
σσ′=± S
with ¯σ=−σ, the detector responses S
det,α=RS
det,α=IS
(j)
QQQ = cσcσ′[ Q(τ1),[ Q(τ2), Q(τ3)]σ′]σ
det,α, and the third-order correlators
with the constants c+= 1~2 and c−=−i and[⋅,⋅]−=[⋅,⋅]
resp. [⋅,⋅]+={⋅,⋅} (note that (anti-)symmetrized charges
(j)
det,α and
(3),−
det,γ Sσσ
(2),¯σ′
det,βS
(1),¯σ
det,αS
(j),−
(j),+
Sσσ
P irr
(56)
′
,irr
′
,irr
S
10
QQ.
thogonality of these four components, the particle num-
electron state after the scattering events at the QPC,
barrier (ssb) is left open, such that the two particles inter-
We can calculate the evolution of the state through
the Hong-Ou-Mandel setup using the wave function
in channel 3 as a function of mutual delay τ (tuned via
an additional gate in loop 1, see figure) then provides all
periment of Bocquillon et al.24 and sketched in Fig. 3. In
this experiment, the dynamically switchable barrier (dsb)
again splits the two electrons in each pair to propagate
along the paths 1 and 2 → 2′, respectively. The static
fere in the splitter. Measuring the current noise S(3)(τ)
information needed to constructRSirr
Ψf=Ψftt+Ψftr+Ψfrt+Ψfrr describing the two-
with Pαβ= αβΨfΨfαβ, i.e., the individual components
are not normalized and onlyΨfΨf= 1. Due to the or-
bers N(i), i= 3, 4, emerging from our Hong-Ou-Mandel
the particle number fluctuationsΨf(δ N3)2Ψf in chan-
tions, rtΨf N3Ψfrt=(1~2)⋅ 1⋅ Prt and rtΨf N 2
3Ψfrt=
(1~2)⋅ 12⋅ Prt, hence,
and the same result holds true for theΨftr scattering
component. While there is no contribution fromΨfrr,
the one originating fromΨftt depends on the time delay
τ . Let f1(x) and f2(x) denote the two electron wave-
relate the number fluctuation in the componentΨftt to
packets propagating along the incoming paths 1 and 2 of
the HOM-interferometer. As shown in Ref. 30, we can
rtΨf(δ N3)2Ψfrt= 1
nel 3 involve single-particle and two-particle contribu-
splitter can be analyzed term by term.
⋅ Prt,
In particular,
(60)
4
the overlap of wavefunctions as
ttΨf(δ N3)2Ψftt= 1
1−f1f22Ptt,
wheref1f2=∫ dxf∗
1(x)f2(x). For a large time delay
fere, f1f2= 0, such that the fluctuations are just the
between the first and second electron, these do not inter-
(61)
2
double of (60),
ttΨf(δ N3)2Ψftt= 1
Compensating the original time delay τ=−τ21 (such that
(62)
Ptt.
2
the two electrons arrive simultaneously at the splitter),
we have
ttΨf(δ N3)2Ψftt= 0,
(63)
since the Pauli exclusion forces the two particles to
propagate to different channels.
result
Ψf(δ N3)2Ψf then involves separately the probabili-
ties Prt+ Ptr and Ptt,
The final
Ψf(δ N3)2Ψf∞= 1
(Prt+ Ptr)+ 1
4
Ptt,
(64)
2
t
t
t
QQ.
(1)
(4)
(3)
and I
+I
FIG. 3:
Schematic illustration of a quantum Hall device
with a single electron pump (left), the QPC -- QD setup (mid-
dle) and a detector arrangement (right), inspired by Refs.
23,24. Pairs of electrons are injected by the single electron
pump with a time delay τ21 and scattered by the quantum
point contact with scattering coefficients r and t depending
tron (flying qubits j= 1 and j= 2) into arms 1 and 2. Closing
on the charge state of the quantum dot. The dynamically
switchable barrier23 (dsb) separates the first and second elec-
= I
charge correlatorISirr
(1)
(2)
the static switchable barrier (ssb) and measuring the currents
t provides the anti-symmetrized charge-
I
t
QQ. Opening the static switchable barrier
(3)(τ) as a function of the tunable delay τ
(ssb), having the two particle streams along the trajectories
in the detector 3 provides the symmetrized correlatorRSirr
1 and 2' interfere at the 50/50 beam splitter, and measuring
the current noise S
the QPC,∑β Pαβ= P(1)
t ~eνp = P
(1)
α . Hence, the first equation (57)
and thus contains only infor-
reduces to I
mation about the mean charge on the dot.
normalization ∑α P(j)
= P
(2)
On the contrary, summing over the first particle α does
not generate P
β as the interaction of the first electron at
the earlier time τ1 introduces nontrivial correlations, see
(2)
Eq. (6). This becomes apparent when going over to irre-
ducible probabilities P irr
α P
β and using the
(2)
(58) becomes I
t which includes
information about the dot's charge correlator. Assum-
ing a time-independent mean charge on the dot, we have
P
the measured currents are easily transformed to provide
the antisymmetrized correlator
αβ= Pαβ− P(1)
α = 1. Then, the second equation
tt + P irr
rt + P
t ~eνp= P irr
= I
t ~eνp and using the general result (17),
t − I
t )~eνp
QQ=(I
ISirr
δT(Rδχ+ T δθ) .
tr ∝(ISdet,r+ISdet,t)= 0, explicitly
tt + P irr
tt + P irr
tt + P irr
In order to find the symmetric correlator RSirr
Note that the evaluation of the irreducible probability
P irr
tr with the help of (17) indeed provides a vanish-
ing result, P irr
demonstrating that the sum P irr
relations.
QQ one
has to measure a time correlator on the transmitted chan-
nel. This can be conveniently done with the help of a
Hong-Ou-Mandel type splitter as implemented in the ex-
tr contains no cor-
(2)
(2)
(1)
(1)
(2)
(1)
(59)
t
t
It(3)It(1)pumpIsplitterQPCQDrtssbdsbI(2)tdelay(1)(2')(3)(2)(4) when the delay between electron pulses is not compen-
sated and
Ψf(δ N3)2Ψf0= 1
(Prt+ Ptr),
4
W
(65)
(3)(t1) I
In a next step, we express the charge fluctuations
in channel 3 through the irreducible current-current
correlator,30
where the time-window W is centered around the arrival
time of the wave-packets at the detector 3 and has a
p , with νp the rate of pair
injection by the pump. The particle number fluctuations
then can be expressed through the low-frequency current
when the time delay is properly compensated, τ=−τ21.
(3)(t2), (66)
Ψf(δ N3)2Ψf= 1
dt1dt2 I
e2S
width of the order of ∆τ = ν−1
noise S(3)(ω),
sin2(ω~2νp)
S(3)(ω)
Ψf(δ N3)2Ψf=S dω
(ω~2)2
with ω≤ νp. Neglecting the frequency dependence of the
noise at small ω, S(3)(ω)∼ S(3)(0), we obtain
(3)~e2νp,
S(3)∞ − S
Ψf(δ N3)2Ψf= S
, Ptt= 2
and hence
(3)
(67)
(68)
(69)
2π
e2
0
,
.
e2νp
(3)
S
0
e2νp
Prt+ Ptr= 4
rt + P irr
tt − T δθ Rδχ(P irr
QQ
(70)
tr and P irr
tt ,
rt + P irr
(δT)2(Rδχ+ T δθ)2
Using Eq. (17), we can derive an alternative (more
symmetrized) version of Eq. (45) which involves just the
combinations P irr
RSirr
=(Rδχ)2 P irr
tr )+(T δθ)2 P irr
Defining the detector parameters κ= T δθ~(Rδχ+ T δθ)
=
t = I
t ~eνp independent of time), we obtain the final
result(δT)2RSirr
QQ=
= 2(1−2κ) S(3)∞ − S
− κ2
and going over to irreducible probabilities (with P
P
+ κ2− I
+ 4κ
(2)
(1)
(3)
(1)
(71)
rr
0
.
.
t
(3)
S
0
e2νp
e2νp
(1)
t
eνp
Note that in this setup, the final measurement of qubit
memories does not require fast or time resolved detection
schemes, but merely relies on the measurement of aver-
age currents and low-frequency noise. This is due to the
fact, that all timing tasks are realized by the properly
time-delayed electron pulses in the incoming channel and
the dynamically switchable gate (dsb) which separates
the electron pairs; both elements have been realized in
an experiment23. Hence, the new measurement scheme,
11
combined with novel elements from electron quantum op-
tics, allows to shift the (difficult) timing issues in the
measurement of a time-correlator from the detector to
the source.
is given by Eq. (49), SP
A strong coupling between the quantum dot and the
quantum point contact provides us with a projected cor-
relator. For the simplest case of a binary charge on the
dot with values Q= 0, 1, the projected charge correlator
QQ= Prr. Making use of the nor-
malization Ptt+ Prt+ Ptr+ Prr= 1 and the result Eq. (69),
QQ= 1− 2
0 + S(3)∞
we find that
(72)
SP
S
.
(3)
e2νp
IV. CONCLUSION
In conclusion, we have applied the principle of deferred
measurement to the problem of repeated measurement
and have derived physical expressions for the two- and
multi-time correlators. The measurement involves the
inclusion of quantum memories which are entangled with
the system at specific times τj where the system observ-
able is to be probed. The expanded system plus mem-
ories undergoes a unitary evolution until the very end,
where the result is extracted via application of Born's
rule to the memories. The measured probabilities Pαβ
(see Eq. (6)) or memory correlators Sαβ (see Eq. (35))
then can be combined to extract the desired system corre-
lators. The limits of weak and strong measurements pro-
vide the standard (anti-) symmetrized and projected time
correlators previously obtained by invoking the (non-
unitary) von Neumann projection. The general results
have been illustrated by using qubits and qubit registers
as quantum memories. Our analysis sheds new light on
the problem of repeated measurement and illustrates the
usefulness of qubits as sensitive measurement devices.
Although our paper's main results are rather on the
conceptual side, one could imagine an implementation of
such a deferred measurement in an experiment. A sys-
tem that naturally lends itself for a realization of these
ideas is the classic mesoscopic setup which probes the
charge of a quantum dot through a quantum point con-
tact. The individual scattered electrons in the QPC can
be understood as flying qubits which are either trans-
mitted or reflected, with amplitudes depending on the
charge state of the quantum dot. In particular, the qubit
register required in the strong measurement of a dot with
a multi-valued charge is easily implemented in terms of
finite trains of electrons. We have applied our formalism
to this situation and derived the corresponding expres-
sions for a weak and strong measurement.
The experimental implementation of these ideas re-
quires a system control that can only be met with
a modern quantum engineering approach. Recent de-
velopments in electron quantum optics provide con-
trolled single electron pulses and allow for their time re-
solved manipulation/detection on a sub-nanosecond time
scale23,24. Using the setup of Ref. 23 as a base and aug-
menting it with a Hong-Ou-Mandel type analyzer24, we
propose to include a quantum point contact and a quan-
tum dot in order to realize the principle of repeated mea-
surement by a deferred measurement of quantum memo-
ries.
As a final remark, one may appreciate the relation of
the deferred measurement principle to Everett's idea of
a multiverse31,32. Rather than applying a projection af-
ter the first measurement and pursuing a single further
evolution (of the system = 'universe'), the principle of
a deferred measurement involving the system's entangle-
ment with a quantum memory enhances the overall di-
mensionality, e.g., for a qubit memory the dimensional-
ity is doubled (with two 'universes' evolving in parallel).
It is then only the final measurement which determines
which evolution (i.e., which 'universe') actually has been
realized.
Acknowledgments
We thank Renato Renner for discussions and acknowl-
edge financial support from the Swiss National Sci-
ence Foundation through the National Center of Compe-
tence in Research on Quantum Science and Technology
(QSIT), the Pauli Center for Theoretical Studies at ETH
Zurich, and the RFBR Grant No. 14-02-01287.
Appendix: Detector properties
A quick overview is provided by the example of a δ-
function scatterer: Expressing the strength of the scat-
terer ŏh2λ~m for the two charge states by λ0 = λ and
λ1 = λ+ δλ, an incoming state with wave vector k is
transmitted with amplitude tn= k~(k+ iλn), n∈{0, 1}.
Expanding the transmission Tn= k2~(k2+ λ2
n) and phase
θn =− arctan(λn~k), we find the modifications δT and
δθ= δχ (for a symmetric scatterer) in the scattering char-
acteristic of the QPC upon charging the dot
δT≈− 2k2λ2
(k2+ λ2)2
δθ= δχ=− kλ
k2+ λ2
In the limit of a large incoming energy, i.e., kâ λ, we
find δT ≈ −2λ δλ~k2 and δθ = δχ ≈ −δλ~k and hence
δθ, δχ â δT ; with T ≈ 1 and R ≈ λ2~k2 â 1, we
have Tδθ â δT â Rδχ and therefore ISdet,t â
RSdet,r~t â ISdet,r. For a small
k â λ, we obtain δT ≈ −2k2δλ~λ3 and δθ ≈ −kδλ~λ2
and using T ≈ k2~λ2 and R ≈ 1, we find ISdet,r â
RSdet,r~t â ISdet,t. When k ≈ λ, all response func-
incoming energy
δλ
λ
δλ
λ
(A.1)
(A.2)
,
.
tions are of the same order.
Alternatively, we can consider a single electron tran-
sistor (SET) with the level position kres,n affected by the
12
.
,
(A.4)
(A.3)
γδkres
capacitive coupling and depending on the dot's charge
state n, i.e., kres,0= kres and kres,1= kres+ δkres. The
transmission coefficient is given by tn= iγ~(k−kres,n+iγ),
where γ is the level width. Again expanding Tn =
γ2~((k− kres,n)2+ γ2) and tan θn=(k− kres,n)~γ for small
δkresâ kres, we find
δT=− 2(k− kres)γ2δkres
[(k− kres)2+ γ2]2
δθ= δχ=−
(k− kres)2+ γ2
For incoming electrons on resonance with the level, i.e.,
k−kresâ γ, we obtain δT≈−2(k−kres)δkres~γ2 and δθ=
δχ≈−δkres~γ, such that δθ, δχâ δT and using T≈ 1 and
R≈(k− kres)2~γ2, we find thatISdet,tâRSdet,r~tâ
ISdet,r. On the other hand, for off-resonant electrons
δT ≈ −2γ2δkres~(k− kres)3 and δθ = δχ ≈ −γδkres~(k−
kres)2, such that δθ, δχâ δT and using T≈ γ2~(k−kres)2
and R ≈ 1, we find ISdet,r â RSdet,r~t â ISdet,t.
Whenk− kres≈ γ, all response functions are of the same
ing potential Vn(x)= Vn−kx2~2 where the offset Vn is the
n. Here, we assume a quasi-classical description and
consider the two limits of electrons with energy Eâ Vn
resp. Eâ Vn, see Fig. 4.
A more realistic description for the quantum point con-
tact (QPC) is achieved by considering a parabolic scatter-
QPC barrier height when the dot is in the charge state
order.
FIG. 4: QPC modeled by a parabolic potential.
Using the Kemble formula33, we obtain the trans-
mL2~8ŏh2(E− Vn)~√
mission Tn= 1~(1+ exp[−2π
Vn]),
where we have chosen V(±L~2)= 0. For weak coupling
δV = V1− V0 â V0, we obtain the shift (we define the
energy scale EL=ŏh2~2mL2)
E+ V0
δV√
which is suppressed exponentially for Eâ V0 and Eâ V0
The change in phase at large energies E â V0 is de-
region [−L~2, L~2]; within a quasi-classical description,
termined by the transmission phase accumulated in the
due to an exponentially small reflection or transmission.
δT= π
TERE
ELV0
(A.5)
V0
4
,
0L2L2V0EVV1 dx
S L~2
−L~2
θn= 1ŏh
= 1
in phase δθ= δχ,
this is given by (ε≡ E~Vn)
2m(E− Vn(x))
√
ε−(ε− 1) log(ε− 1)1~2
+(ε− 1) log(1+√
ε)(cid:6).
δV√
δθ≈− 1
Vn
EL
2
.
V0
E
Expanding this result for small δV , we obtain the change
(A.6)
(A.7)
3
ELV0
Given the exponential suppression of δT at large ener-
gies Eâ V0, we find that δT âδθ=δχ and for large
transmission we have ISdet,tâRSdet,r~tâISdet,r.
In the opposite regime of small energies Eâ V0, we de-
termine the change in phase (within quasi-classics) from
1 G.B. Lesovik and R. Loosen, JETP Lett. 65, 295 (1997).
2 G.B. Lesovik, Phys.-Usp. 41, 145 (1998).
3 R. Aguado and L.P. Kouwenhoven, Phys. Rev. Lett. 84,
1986 (2000).
4 K.V. Bayandin, A.V. Lebedev, and G.B. Lesovik, JETP
106, 117 (2008).
5 L.S. Levitov, H.W. Lee, and G.B. Lesovik, J. Math. Phys.
37, 4845 (1996).
6 D.A. Bagrets and Yu.V. Nazarov, Phys. Rev. B 67, 085316
(2003).
7 A. Di Lorenzo, G. Campagnano, and Y.V. Nazarov, Phys.
Rev. B 73, 125311 (2006).
8 R.J. Glauber, Phys. Rev. Lett. 10, 84 (1963).
9 L. Mandel, Phys. Rev. 152, 438 (1966).
10 L. Mandel and E. Wolf, Optical coherence and quantum
optics (Cambridge University Press, Cambridge, 1995).
11 A. Bednorz, C. Bruder, B. Reulet, and W. Belzig, Phys.
Rev. Lett. 110, 250404 (2013).
12 G.B. Lesovik and I.A. Sadovskyy, Phys. Usp. 54, 1007
(2011).
13 D. Oehri, A.V. Lebedev, G.B. Lesovik, and G. Blatter,
13
S x0−L~2
χn≈ 2ŏh
the phase of the reflection amplitude,
2m(E− Vn(x)),
where the reversal point x0 < 0 is characterized by
V(x0)= E. To leading order in δV we find that
(A.8)
dx
δχ≈− 1
E
3~2
δV√
.
(A.9)
3
V0
ELV0
ponential suppression of T and the response functions re-
Once more, it follows thatδθ,δχâ δT due to the ex-
spect the orderRSdet,râISdet,r~tâRSdet,t. At in-
tions satisfyingRSdet,tâISdet,r~tâRSdet,r while at
small transmissionRSdet,râISdet,r~tâRSdet,t.
termediate energies, the response functions are of similar
magnitude. Summarizing, we find that a scatterer with
large transmission is characterized by the response func-
Frost, G.A.C. Jones, and D.G. Hasko Phys. Rev. Lett. 70,
1311 (1993); L.M.K. Vandersypen, J.M. Elzerman, R.N.
Schouten, L.H. Willems van Beveren, R. Hanson, and L.P.
Kouwenhoven, Appl. Phys. Lett. 85, 4394 (2004); S. Gus-
tavsson, R. Leturcq, B. Simovi c, R. Schleser, T. Ihn, P.
Studerus, K. Ensslin, D.C. Driscoll, and A.C. Gossard,
Phys. Rev. Lett. 96, 076605 (2006).
22 G. Feve, A. Mahe, J.-M. Berroir, T. Kontos, B. Placais,
D.C. Glattli, A. Cavanna, B. Etienne, and Y. Jin, Sci-
ence 316, 1169 (2007); J. Dubois, T. Jullien, F. Portier, P.
Roche, A. Cavanna, Y. Jin, W. Wegscheider, P. Roulleau,
and D.C. Glattli, Nature 502, 659 (2013).
23 J.D. Fletcher, P. See, H. Howe, M. Pepper, S.P. Giblin, J.P.
Griffiths, G.A.C. Jones, I. Farrer, D.A. Ritchie, T.J.B.M.
Janssen, and M. Kataoka1, Phys. Rev. Lett. 111, 216807
(2013).
24 E. Bocquillon, V. Freulon, J.-M. Berroir, P. Degiovanni, B.
Pla¸cais, A. Cavanna, Y. Jin, G. F`eve, Science 339, 1054
(2013).
25 S.A. Gurvitz, Int. J. of Mod. Phys. B 20, 1363 (2006).
26 A.V. Lebedev, G.B. Lesovik, and G. Blatter, Phys. Rev. B
Phys. Rev. B 90, 075312 (2014).
14 J. von Neumann, Mathematische Grundlagen der Quan-
72, 245314 (2005).
27 J. Keeling, I. Klich, and L.S. Levitov, Phys. Rev. Lett. 97,
tentheorie (Springer, Berlin, 1931).
15 M. Nielsen and I. Chuang, Quantum Computation and
Quantum Information (Cambridge University Press, Cam-
bridge, 2000).
16 M. Born, Z. Phys. 37, 863 (1926).
17 S.A. Gurvitz, Phys. Rev. B 56, 15215 (1997).
18 Y. Makhlin, G. Schon, and A. Shnirman, Phys. Rev. Lett.
85, 4578 (2000).
19 D.V. Averin and E.V. Sukhorukov, Phys. Rev. Lett. 95,
126803 (2005).
20 H.M. Wiseman and G.J. Milburn, Quantum measurement
and control (Cambridge University Press, Cambridge,
2010).
21 M. Field, C.G. Smith, M. Pepper, D.A. Ritchie, J.E.F.
116403 (2006).
28 C. Grenier, R. H´erv´e, G. F`eve, P. Degiovanni, Mod. Phys.
Lett. B 25, 1053 (2011).
29 R. Thalineau, A.D. Wieck, Ch. Bauerle, and T. Meunier,
arXiv:1403.7770.
30 A.V. Lebedev and G. Blatter, Phys. Rev. B 77, 035301
(2008).
31 M. Tegmark, Nature 448, 23 (2007).
32 The Many-Worlds Interpretation of Quantum Mechanics,
edited by B.S. De Witt and N. Graham (Princeton Uni-
versity Press, Princeton, New Jersey, 1973).
33 E.C. Kemble, Phys. Rev. 48, 549 (1935).
|
1610.08218 | 1 | 1610 | 2016-10-26T07:34:42 | Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves | [
"cond-mat.mes-hall"
] | Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La$_{0.7}$Sr$_{0.3}$MnO$_3$ surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer. | cond-mat.mes-hall | cond-mat | Resistive Switching and Voltage Induced Modulation of Tunneling
Magnetoresistance in Nanosized Perpendicular Organic Spin Valves
Robert Göckeritz,1 Nico Homonnay,1 Alexander Müller,1 Bodo Fuhrmann2, and Georg Schmidt1,2,a)
1Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale), Germany
2Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg,
06099 Halle (Saale), Germany
a)Electronic mail: georg.schmidt@physik.uni-halle.de.
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The
devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5
orders of magnitude and magnetoresistance as high as -70% the latter even changing sign
when voltage pulses are applied. This combination of phenomena is typically observed in
multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a
ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates
from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of
charge carriers and thus both the electrical resistance and the tunneling magnetoresistance
which occurs at pinholes in the organic layer.
In the past years a number of multiferroic tunnel junctions have been demonstrated in which tunneling
magnetoresistance (TMR) and total device resistance can be modulated by a voltage pulse.1,2 The
effects are typically explained by tunneling electroresistance (TER) due to a ferroelectric barrier which
changes the total resistance and magnetoelectric coupling at the interface between ferroelectric barrier
and ferromagnetic contact which changes the TMR in magnitude and sometimes in sign. We observe
the same functionality in organic spin valves (OSVs, Fig. 1), which after applying a voltage pulse may
change the device resistance by three orders of magnitude or more and modulate their
magnetoresistance (MR) from +26% to -38% which is a much larger effect than observed in Refs. 1 or
2. Nevertheless, the absence of a ferroelectric layer in our devices excludes both TER and
magnetoelectric coupling as possible explanation. It should, however, be noted that our devices and
those from Refs. 1 and 2 have a La0.7Sr0.3MnO3 (LSMO) bottom electrode as a common property.
FIG. 1: MR traces of a nanosized OSV (LSMO/Alq3/MgO/Co/Ru with 20/12/3/30/10 nm in thickness)
for two different resistance states after different voltage pulses taken at 4.3 K. The resistance changes
by approx. three decades and the relative MR exhibit a sign reversal from +26% to -38%.
Already in 2011 the simultaneous observation of magnetoresistance and resistive switching (RS) has
been reported for organic spin valves by Prezioso et al.3,4 In this case the devices were
LSMO/Alq3/Co-based spin valves showing a relative MR of -20% in the initial state. By applying
1
voltage pulses the overall device resistance was increased while the relative MR decreased without
changing shape or sign. The device resistance could be increased by two decades while the MR was
completely suppressed. A possible explanation suggested by Prezioso et al. was the blocking of
filaments or charge trapping in combination with giant magnetoresistance (GMR) and spin injection as
a prevalent transport mechanism, however, no clear identification of the underlying physics was
possible. Recent results from our own group in structures with only one ferromagnetic electrode
(LSMO) also demonstrated RS. However, in this case the RS could clearly be linked to the
modification of the LSMO surface which creates and modifies a tunnel barrier between the LSMO and
the organic semiconductor.5 The modification was shown to originate from the creation of mobile
oxygen vacancies in the LSMO. In these experiments the MR could clearly be identified as tunneling
anisotropic magnetoresistance (TAMR). Any increase in device resistance also resulted in increasing
MR with a maximum value of 20%.
Similar to the OSV from Prezioso et al. the devices presented here have a second magnetic
electrode. In recently published experiments we have already identified the origin of the
magnetoresistance in our devices as tunneling via pinholes through the Alq3 layer resulting in TMR.6,7
Also with respect to the interplay of RS and MR they differ considerably from the OSVs by Prezioso et
al. as we do not only observe a change in magnitude but also a sign change of the MR.
All samples are fabricated using our recently reported technique7 which allows to define
perpendicular OSVs with nanosized active device area. The samples consist of 7 to 14 devices,
respectively, with a layer stack of LSMO/Alq3/MgO/Co/Ru (thicknesses 20/12/3/30/10 nm,
respectively). The active device area is lithographically defined by a window of approx. 500 x 500 nm²
through an insulating aluminum oxide (AlOx) layer on top of the LSMO. All other active layers are
consecutively deposited through different large-area shadow masks by thermal evaporation (Alq3),
sputtering (MgO, Co, Ru) and e-beam evaporation (Ti/Au contacts). During the last step the organic is
shielded by the shadow mask to avoid any radiation damage.8
Characterization is done in a 4He bath cryostat equipped with a 3D vector magnet. All results
presented here were obtained at a temperature of 4.3 K. The resistance is measured at 10 mV bias
(applied to the cobalt top contact) using a current amplifier. For RS effects short voltage pulses (200-
500 ms) of up to ±2.5 V are applied, followed by a resistance measurement. For selected resistance
values an I/V curve is taken and an MR scan is performed.
A total of 69 devices with nanosized active area on 15 different samples, each sample with
respective different fabrication details were fabricated and characterized. Similar to Ref. 7 we achieve
a yield of approx. 55% of working devices, while the other devices show an immeasurably high
(>100 GΩ) or very low (<5 kΩ) resistance. This variation of the electrical device properties among a
series of samples has recently been discussed7 and indicates that tunneling through pinholes is the
dominating transport mechanism. The presence of TMR and the absence of GMR are also confirmed
by Hanle-measurements which are routinely performed on all devices.6
For more than half of the working devices it is possible to change the device resistance
reversibly by applying voltage pulses of different height and polarity and all of these devices exhibit
MR. Though strong variations in total resistance and MR appear from device to device as mentioned
above the qualitative behavior is comparable and is described below using two examples.
2
FIG. 2. Resistance versus pulse height (XY plane with its projection to the bottom plane) for
two nanosized (500 x 500 nm²) perpendicular OSVs with dAlq3 ≈ 12 nm. A closed loop over 3
decades of resistance (5 for device 'B') is possible. The bars indicate the maximum relative
MR at selected points of the loop. The MR is always negative except for a single positive
result close to the maximum resistance state (see Fig. 3 for more details). All measurements
were done at 4.3 K.
Fig. 2 shows the changes of the device resistance and the relative MR for a representative device
(Device A) when voltage pulses between -1.6 V and +1.3 V are applied. The initial resistance before
any pulse (8.1 MΩ) only changes when Vpulse<-0.7 V. Further decrease of the pulse voltage down to -
1.6 V results in a decrease of resistance by more than two decades (≈50 kΩ). From this point on the
pulse voltage is increased. Massive increase of resistance of more than three decades can be
observed for Vpulse>+0.5 V, resulting in 270 MΩ after Vpulse=+1.3 V. Decreasing the pulse voltage again
shows no effect down to -1.0 V when the resistance decreases again in a sharp switching event, finally
reaching the lowest state (Vpulse=-1.6 V). We thus obtain a closed hysteresis loop which can be
repeatedly driven through nearly 4 decades of resistance. At the two threshold values of Vpulse the
resistance rises smoothly (≈+0.5 V) but decreases in an abrupt manner (≈-1.0 V). The loop was not
extended further in order to avoid damage to the device by excessive voltages.
Another device 'B' is located on another sample, however, fabricated using the same parameters.
Here the resistance change extends over more than 5 decades (right side of Fig. 2), although the
general behavior is the same as for device 'A'. The corresponding threshold voltages are slightly
different and the measured resistances exhibit a distinct fluctuation for higher Vpulse, nevertheless a
closed loop can be measured.
At selected points of the hysteresis loop (marked with colored bars along the MR axis in Fig. 2) MR
measurements have been carried out. The bars indicate the respective relative magnitude of the MR.
Already here it is visible that the MR not only changes its amplitude but also its sign, much in contrast
to results of Prezioso et al.3,4 and Grünewald et al.5 The corresponding full MR traces are plotted in
Fig. 3. The value for the maximum MR for each trace relates to the height and sign of the
corresponding bar with the same color in Fig. 2.
3
FIG. 3. MR traces of one magnetic field sweep direction for different voltage pulses (bottom to
top) at T = 4.3 K for two devices 'A' and 'B', respectively. The MR traces are captured directly
after resistance measurements which are depicted in Fig. 2 (according color code). The size,
coercive fields and even the sign of the MR changes for both devices.
The black curve for device 'A' (bottom left in Fig. 3) is taken before any pulse is applied. The MR trace
is typical for an OSV as it displays a negative MR (-19.8%) with two distinct resistance values and two
clear coercive fields (+2 mT and +20 mT). The back sweep looks similar with reversed magnetic fields
and is not shown here. Asymmetries in MR traces (compare to Fig. 1) often occur. They can also be
seen elsewhere1 and usually no clear explanation is given. In our devices they may for example be
attributed to different pinning of domain walls between opposite magnetic field sweep directions, which
could be related to the inhomogeneous Co top electrode or to a very sensitive probing of the complex
density of states in the LSMO which depends on the exact direction of the magnetization with respect
to the lattice and which may not vary uniformly during the reorientation process.
While the device resistance is changed by the voltage pulses (between -1.6 V and +1.3 V, bottom to
top in Fig. 3 for device 'A') also all three features of the MR, namely the sign, the relative magnitude,
and the coercive fields change. It should, however, be noted that all MR traces have a negative sign,
except after Vpulse=+1.2 V where a pronounced positive MR signal of +23.5% can be observed. It is
also noteworthy that in all MR traces the lower coercive field remains unchanged (≈2 mT) while the
upper coercive field varies (17-140 mT). In some cases the switching at higher fields even occurs in
several steps.
Starting with an MR of -20% (before any voltage pulse) it reaches -70% after the first pulse (-1.6 V).
Successively a reduction (from -30% to <-4%) is observed until at +1.2 V even the sign is reversed
(+23.5%) before the MR is finally reduced to almost zero. After closing the hysteresis loop and setting
the device back to the initial low resistance state the MR also goes back to -28%, however, it then
lacks the step-wise switching which could be observed in the beginning of the loop.
Qualitatively the same features as explained above can be observed for device 'B' (right side of Fig. 3)
with two noticeable differences. Firstly, a MR trace can only be observed after an initial -2.0 V pulse
and secondly, both coercive fields vary for the different states. It does not surprise that repeating the
complete measurement cycles does not yield the exact same values of the MR, coercive fields and
threshold voltages for the sign reversal as the preparation of each resistance state depends on the
samples' history. Especially shape and magnitude of the MR can strongly depend on minor changes of
the procedure while the overall qualitative behavior during similar cycles is identical. Indeed this
4
directly supports our line of arguments about the presence of tunneling and its high sensitivity to any
change of material properties.
We expect the RS in our device to originate from a tunnel barrier which is modified by a voltage pulse
similar to the one described in Ref. 5. In order to analyze the barrier properties first I/V
characterization is performed at those points of the hysteresis loop where also the MR is
characterized. Small excitation voltages (±10 mV) are used in order to avoid modifications of the
barrier during the measurement. The I/V curves are non-linear and the dI/dV curves exhibit a strongly
parabolic character in the voltage range of approx. ±4 mV. This parabolic behavior is a typical indicator
for tunneling processes as will be discussed below. The obtained curves, however, exhibit a certain
asymmetry indicating that in contrast to Ref. 5 they are not caused and cannot be modeled by a
simple rectangular barrier.
In the following explanation this is taken into account by considering two adjacent barriers with
different origin and voltage dependence.
First we consider the tunneling through the Alq3 layer at pinholes which we do model by a fixed barrier
for a given device and which is the major cause of TMR. But secondly our devices also exhibit RS
which modulates the MR. This effect is well investigated by Grünewald et al.5 and has successfully
been modeled by a variable rectangular tunneling barrier created by oxygen vacancies at the
Alq3/LSMO interface. These positive oxygen vacancies are formed at the LSMO/Alq3 interface. They
are mobile and can easily be moved by electric fields. During a hysteresis loop vacancies and
interstitials of oxygen ions are separated and redistributed within a certain depth from the interface
which results in a variable tunnel barrier and causes the change in resistance which can be
considered as a local metal-to-insulator transition.9 It should be noted that the bulk of the LSMO
electrode itself behaves fully metallic. Its in-plane resistance is in the range of a few kΩ and is slightly
reduced during cool-down from room temperature to 4.3 K.
This second effect is implemented here by an additional second variable tunneling barrier in the same
way as Grünewald et al. did for their devices.
Together with the aforementioned fixed Alq3 barrier we thus obtain a transport model of two adjacent
tunnel barriers that we can simulate with a suitable fitting model, which is explained later.
While in Ref. 5 the variable barrier resulted in additional TAMR only, here we observe a much stronger
effect. The features of the TMR now depend on the spin dependent coupling between the LSMO and
the Co through the barrier. As the LSMO surface is part of the barrier its modification can change this
coupling which can result in massive changes of the TMR, even in a sign reversal. Both barrier
thickness10 and electrode surface11 are known to influence TMR with organic spacers in magnitude
and sign. A modification below the LSMO surface can even lead to a modified magnetization reversal
which may account for the observed changes in coercive field.
In order to implement the above explained transport model into an I/V fitting model with two adjacent
tunnel barriers we use an expanded Simmons model12 (with error corrected formulas). Each
rectangular barrier is defined by the thickness, height, permittivity and charge carrier mass. For the
first barrier all parameters are kept constant at reasonable values to account for the fixed Alq3 barrier
for the different resistance states in one hysteresis loop (0.9 nm, 21.9 meV, 50 x ε0 and 3.5 times the
electron mass, respectively). For the second barrier at the surface of the LSMO, however, voltage
pulses modify the barrier properties and cause the resistive switching. Therefore these parameters are
kept free within adequate limits. As there is no global optimum for all nine fitting parameters any
results need to be considered with caution and merely to extract trends rather than exact quantities.
5
FIG. 4. Experimental data (circles) for I/V curve (black) and differential resistance (red) together with
simulated curves for a simple Simmons fit (light colored curves) and for the two-barrier-model (dark
colored curves) after a +1.2 V pulse for device 'A'. The latter one respects for asymmetries and
achieves a better compliance with the measurement.
In Fig. 4 the experimental I/V and differential resistance curves are displayed after a +1.2 V pulse
together with a simple Simmons fit (light colored) and a fit for the two-barrier-model (dark color).
Obviously a better compliance is possible for the two-barrier-model especially as the asymmetry of the
I/V characteristics is taken into account.
FIG. 5. Thickness and height of the second tunnel barrier versus the applied pulse voltage for device
'A'. Values have been extracted from data fitting using the expanded (and corrected) Simmons
model12 with two barriers. Parameters of the first barrier are fixed, most notably the thickness at
0.89 nm. The variable thickness and height of the second barrier (1.5 - 5.8 nm) are strongly influenced
by different voltage pulses. Arrows indicate the sequence of the measurement in the resistance
hysteresis loop beginning at 'start'.
For the variable barrier the most significant parameter which influences the transmission is the barrier
thickness, for which we plotted the calculated value of each fit for different voltage pulses in Fig. 5. In
our model allowed values are between 0.1 - 20 nm, while barrier height, effective mass of charge
carriers and dielectric constant are allowed to vary within the ranges of 9.4 meV - 4 eV, 10 - 100 x ε0
and 3 - 4 times the electron mass, respectively. According to the fit the barrier thickness changes from
1.5 nm to 5.8 nm and shows a clear trend of increasing thickness with higher pulse voltages. For the
resetting pulse (-1.6 V) the barrier thickness also resets to a lower value of about 2.3 nm. These
results support the theory about a variable tunnel barrier in the LSMO in addition to the fixed tunnel
barrier of the Alq3 pinholes.
6
Although the explanation given above is plausible other explanations shall briefly be discussed. The
Co contact itself is a possible candidate, however, nothing indicates a contribution from this side while
we know that the LSMO contact can exhibit resistive switching.13–16 In addition RS in oxides has often
been described17–21 while for metallic cobalt RS has not been reported. Modification of conducting
filaments in the Alq3 can be excluded because we already know that the MR is based on tunneling.
Other modifications of the Alq3 cannot be completely excluded, though no suitable mechanism comes
to mind. In reference to the explanation of the MR and RS effects provided in Refs. 3 and 4 our
alternative explanation is entirely evident as the basic magnetoresistive functionality of our devices
differs considerably.
In addition our theory can explain the finding that an MR effect in device 'B' could only be measured
after applying a negative voltage pulse by the need to first sufficiently create and separate oxygen
vacancies and interstitials to realize a suitable barrier for the occurrence of tunneling assisted MR
effects as described in Ref. 5 again supporting the presence of a similar mechanism.
Furthermore, recent measurements on similar devices containing metal free phthalocyanine (H2Pc) as
spacer layer which will be published elsewhere show very similar results in terms of MR and RS
properties supporting that the effect originates from the electrode rather than from properties of the
organic semiconductor.
In summary we have fabricated nanosized perpendicular organic spin valve devices which exhibit a
unique interplay of resistive switching and magnetoresistance effects up to now primarily observed in
multiferroic tunnel junctions. Transport occurs locally through pinholes providing a tunneling path
through the organic material. The MR thus originates only from TMR and possibly from small
contributions from TAMR. The tunnel barrier consists of two parts, namely the organic semiconductor
in the pinhole (fixed barrier) and a tunnel barrier induced by oxygen vacancies at the LSMO surface
which can be modified by a voltage pulse leading to resistive switching and modifications of the MR
(variable barrier).
These devices demonstrate the potential multifunctionality of LSMO in transport structures and
present the opportunity for multi-state memory because in contrast to Prezioso et al.3,4 the MR persists
in different resistive switching states. A major challenge, however, for applications will be to harness
the MR which is currently based on pinholes and thus difficult to control.
Acknowledgments
This work was supported by the European Commission within the 7FP project HINTS (Project No.
NMP-CT-2006-033370) and by the DFG in the SFB 762.
7
(2011).
1V. Garcia, M. Bibes, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne,
A. Gloter, D. Imhoff, C. Deranlot, N.D. Mathur, S. Fusil, K. Bouzehouane, and A. Barthelemy,
Science 327, 1106 (2010).
2D. Pantel, S. Goetze, D. Hesse, and M. Alexe, Nat. Mater. 11, 289 (2012).
3M. Prezioso, A. Riminucci, I. Bergenti, P. Graziosi, D. Brunel, and V.A. Dediu, Adv. Mater. 23, 1371
4M. Prezioso, A. Riminucci, P. Graziosi, I. Bergenti, R. Rakshit, R. Cecchini, A. Vianelli, F. Borgatti, N.
Haag, M. Willis, A.J. Drew, W.P. Gillin, and V.A. Dediu, Adv. Mater. 25, 534 (2013).
5M. Grünewald, N. Homonnay, J. Kleinlein, and G. Schmidt, Phys. Rev. B 90, 205208 (2014).
6M. Grünewald, R. Göckeritz, N. Homonnay, F. Würthner, L.W. Molenkamp, and G. Schmidt, Phys.
7R. Göckeritz, N. Homonnay, A. Müller, T. Richter, B. Fuhrmann, and G. Schmidt, Appl. Phys. Lett.
8J. Rybicki, R. Lin, F. Wang, M. Wohlgenannt, C. He, T. Sanders, and Y. Suzuki, Phys. Rev. Lett. 109,
9P. Orgiani, A.Y. Petrov, R. Ciancio, A. Galdi, L. Maritato, and B.A. Davidson, Appl. Phys. Lett. 100,
10S. Mandal and R. Pati, ACS Nano 6, 3580 (2012).
11S.W. Jiang, B.B. Chen, P. Wang, Y. Zhou, Y.J. Shi, F.J. Yue, H.F. Ding, and D. Wu, Appl. Phys. Lett.
Rev. B 88, 85319 (2013).
106, 102403 (2015).
76603 (2012).
42404 (2012).
104, 262402 (2014).
12M.G. Chapline and S.X. Wang, J. Appl. Phys. 101, 83706 (2007).
13Y.W. Xie, J.R. Sun, D.J. Wang, S. Liang, and B.G. Shen, J. Appl. Phys. 100, 33704 (2006).
14L. Huang, B. Qu, L. Liu, and L. Zhang, Solid State Communications 143, 382 (2007).
15C. Moreno, C. Munuera, S. Valencia, F. Kronast, X. Obradors, and C. Ocal, Nano Lett. 10, 3828
(2010).
(2013).
16D. Liu, N. Wang, G. Wang, Z. Shao, X. Zhu, C. Zhang, and H. Cheng, Appl. Phys. Lett. 102, 134105
17G. Dearnaley, A.M. Stoneham, and D.V. Morgan, Rep. Prog. Phys. 33, 1129 (1970).
18C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, C. Hu, and T.-Y. Tseng, J. Electrochem. Soc. 154, G189 (2007).
19R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).
20J. Maier, K. Kern, R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
21K. Nagashima, T. Yanagida, K. Oka, M. Taniguchi, T. Kawai, J.-S. Kim, and B.H. Park, Nano Lett.
10, 1359 (2010).
8
|
1201.3115 | 2 | 1201 | 2012-01-20T02:32:57 | Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures. | cond-mat.mes-hall | cond-mat | Measurement and simulation of anisotropic magnetoresistance in single
GaAs/MnAs core/shell nanowires
J. Liang,1, 2 J. Wang,1, 2 A. Paul,1, 3 B.J. Cooley,1, 2 D. W. Rench,1, 2 N. S. Dellas,1, 3 S. E. Mohney,1, 3 R.
Engel-Herbert,1, 3 and N. Samarth1, 2, a)
1)Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802,
USA
2)Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802,
USA
3)Department of Materials Science and Engineering, The Pennsylvania State University, University Park,
Pennsylvania 16802, USA
(Dated: 6 June 2021)
We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs
nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magne-
toresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations
reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to
the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance,
magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromag-
net/semiconductor nanostructures.
PACS numbers: 75.75.-c,75.78.Cd,85.75.-d
The incorporation of spin-related functionality into
semiconductor nanostructures provides an exciting new
route for nanospintronic devices.1 Nanodevices derived
from MnAs/GaAs heterostructures present an interest-
ing opportunity in this context because GaAs is an im-
portant semiconductor for optoelectronics, while MnAs
is a ferromagnetic metal with a Curie temperature
above room temperature (∼313-350 K, depending on the
strain). Indeed, MnAs/GaAs heterostructures have ex-
cellent compatibility with commonly used semiconductor
devices.2,3 In addition, MnAs is a fundamentally inter-
esting ferromagnet because of the unique competing in-
terplay between the magnetocrystalline anisotropy and
the shape anisotropy.4 Recent work has shown that the
heteroepitaxy of MnAs on GaAs can also be realized
in core/shell nanowires (NWs).5 -- 7 Such NWs constitute
a novel arena for studying magnetization dynamics in
restricted nanoscale geometries. However, probing the
magnetization in such individual NWs is a challenge for
conventional magnetometry techniques. Here, we use
magnetoresistance (MR) measurements of single NW de-
vices in conjunction with micromagnetic simulations to
gain insights into the magnetization switching process
of core/shell GaAs/MnAs NWs. The methodology pre-
sented here is also applicable to other hybrid core/shell
semiconductor/ferromagnet NWs of current interest.8 -- 10
The core/shell NW samples studied here were synthe-
sized on GaAs (111)B substrates in an EPI 930 molecular
beam epitaxy chamber. We used a catalyst-free growth
technique for the GaAs NWs,11 followed by thin film
growth of a MnAs shell, as detailed in an earlier report.6
This growth technique contrasts with other approaches
a)Electronic mail: nsamarth@psu.edu
wherein GaAs/MnAs core/shell NWs are synthesized us-
ing a Au catalyst.5,7 Additionally, we note that the epi-
taxial orientation relationship between GaAs and MnAs
is different from NWs synthesized using a Au catalyst due
to the different crystal structures of the GaAs core. This
creates a difference in magnetocrystalline anisotropy that
has a significant impact on the magnetic domain struc-
ture of the MnAs shell and the low field magnetotrans-
port properties.
Figure 1(a) shows a cross-sectional transmission elec-
tron microscope image of a single core/shell NW with a
zinc-blende (ZB) GaAs core of ∼200 nm diameter. The
MnAs shell thickness is estimated to be ∼10 nm. The
GaAs core is mostly in the ZB structure with small seg-
ments of the wurtzite (WZ) phase; the MnAs shell is
crystalline with a hexagonal NiAs structure. For the seg-
ments of the NW with ZB core the growth direction is
along the [111] direction with six facets belonging to the
{110} family. The c-axis (hard axis) of MnAs lies in plane
with the NW facets, at an angle of ∼±53◦ with respect
to the wire axis. The c-axis of MnAs mirrors itself on
adjacent facets. For the WZ part of the NW, the growth
direction is along [001] and the c-axis of MnAs is along
the NW axis.6
We ultrasonically removed the GaAs/MnAs core/shell
NWs from the substrate and dispersed them onto a
Si/Si3N4 substrate. The sample was then transferred into
a dual-beam focused ion beam (FIB) system (FEI Quanta
200 3D) with in situ scanning electron microscopy (SEM)
capabilities. After oxide layer milling, we deposited four
Pt electrodes on single GaAs/MnAs core/shell NWs for
electrical measurements. We minimized the Ga+ ion
imaging time to reduce contamination and also kept the
Ga+ ion deposition current and chamber pressure low
to minimize the spreading of Pt. Figure 1(b) shows an
2
1
0
2
n
a
J
0
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
5
1
1
3
.
1
0
2
1
:
v
i
X
r
a
2
FIG. 1.
(a) Cross-sectional TEM image of a GaAs/MnAs
core/shell NW. The GaAs core is in the ZB phase. (b) Single
GaAs/MnAs core/shell NW device contacted by four FIB-
assisted Pt electrodes, with L = 1.96 µm. (c) GaAs/MnAs
core/shell structure used in micromagnetic simulations.
FIG. 2. (a) Resistivity ρ of the device in Fig. 1(b) as a func-
tion of the temperature with an excitation current of 0.5 µA.
(b) Resistivity vs. temperature (plotted on a log scale). Ex-
perimental MR loops with a magnetic field applied (c) parallel
and (d) perpendicular to wire axis.
SEM image of a typical device. Subsequent electrical
transport measurements were carried out in a Quantum
Design Physical Properties Measurement system using
a standard four-probe AC resistance bridge. We made
sure that the contacts are ohmic and used a typical ex-
citation current of 0.5 µA. We measured the MR over
a temperature range 500 mK to 300 K and in magnetic
fields up to 80 kOe. In total, we fabricated and measured
four devices. In this Letter, we focus on data from only
one of these devices; the other devices show qualitatively
similar behavior. In addition, we carried out control mea-
surements using a bare GaAs NW device (i.e. without
any MnAs shell) using the same FIB contacting technique
with Pt electrodes. This control experiment shows that
the nominally undoped GaAs core is highly insulating.
Thus, the GaAs core merely serves as a NW template
that supports the metallic MnAs shell which dominates
the transport data discussed in this paper.
Figure 2(a) shows the temperature-dependent resistiv-
ity of a GaAs/MnAs core/shell NW with length ∼1.96
µm from room temperature (∼298 K) down to ∼500 mK.
The resistivity of the MnAs shell was ∼ 5 × 10−4 Ω·cm
at room temperature, which is ∼5 times higher than a
typical MnAs epilayer grown on GaAs(001). The tem-
perature dependence of the resistivity shows metallic be-
havior, similar to that of a MnAs epilayer between room
temperature and 20 K. However, the somewhat smaller
residual resistivity ratio (defined as the ratio of the re-
sistivity at 300 K to that at 4.2 K) indicates that these
MnAs shells are more disordered than epitaxial films of
similar thicknesses.12 Below T ≈ 15 K, the resistivity in-
creases with decreasing temperature (Fig. 2(b)). Anal-
ysis to be reported elsewhere shows a temperature de-
pendence of the conductivity σ ∼ ln T , consistent with
the onset of localization in a diffusive two dimensional
system. The saturation of the resistivity at even lower
temperatures (T (cid:46) 1.4 K), shown in Fig. 2(b), is not yet
understood, but could arise either from trivial heating
effects or from more interesting dimensional crossover as
the relevant length scales (such as the phase breaking
length) increase with lowering temperature.
Figures 2(c) and 2(d) show the MR of a NW device
measured at low temperature (T = 10 K) in magnetic
fields applied parallel and perpendicular to the wire axis,
respectively. These measurements were carried out af-
ter first saturating the magnetization of the MnAs shell
at 80 kOe. We observe a hysteretic MR at low fields,
superimposed upon a linear negative MR that does not
saturate even at the highest fields used in the present
measurements (high field data not shown). The physi-
cal origin of this interesting non-saturating MR will be
discussed elsewhere. We focus here on the low field MR.
For magnetic fields along the wire axis, as we decrease
the magnitude of the field from its maximum value to
zero, the resistance initially increases (linear background)
and reaches a maximum after field reversal at ∼3.5 kOe
(Fig. 2(c)). The MR then abruptly changes, indicating
domain switching. From the epitaxial relationship be-
tween the MnAs shell and the GaAs core, we conclude
that this MR feature originates from wire segments with
a ZB core. Our reasoning is as follows:
for segments
with a WZ core, the MnAs hard axis is along the wire
axis; the strong magnetocrystalline anisotropy energeti-
cally disfavors magnetization in that direction and chang-
ing the applied field in that direction would not give rise
to abrupt changes in the MR. Figure 2(d) shows the MR
with the magnetic field perpendicular to the wire axis.
Here, the MR is more complex: as we decrease the mag-
nitude of the field from its maximum value to zero, the
resistance again initially increases (linear background);
the resistance then drops sharply after field reversal to a
minimum at ∼8 kOe before recovering at ∼4 kOe. This
behavior suggests a two step reversal process. Again,
contributions from wire segments with a WZ core cannot
cause the abrupt changes observed in the MR data: the
magnetization would be exclusively in the cross section
of the WZ wire segments favored by both the external
applied field and magnetocrystalline anisotropy.
Both hysteretic effects in the measured MR loops per-
sist up to room temperature and are classic signatures of
anisotropic magnetoresistance (AMR). Since AMR is di-
rectly connected to the magnetization of a ferromagnetic
sample, we can exploit the effect as a sensitive probe of
the field induced rotation and switching of the magneti-
zation in these nanostructures.13 To further gain insight
into the magnetization reversal process of GaAs/MnAs
NWs we carried out micromagnetic simulations. The
magnetic domain structure of MnAs thin films has al-
ready been the subject of micromagnetic studies using
finite difference based solvers.4,14 This approach how-
ever is not suitable due to the geometry of the core/shell
structure. We therefore employed the open source fi-
nite element code MAGPAR15 to avoid erroneous re-
sults from the staircase approximation.16 The domain
configuration was calculated using the Landau-Lifshitz-
Gilbert equation with the damping constant α = 0.1.
The following micromagnetic parameters for MnAs were
used: exchange stiffness constant A = 1 × 10−11 J/m,
uniaxial magnetocrystalline anisotropy constant Ku =
−7.2 × 105 J/m3, and saturation magnetization Ms =
8 × 105 A/m. These parameters were successfully em-
ployed previously to simulate the magnetic domain struc-
ture of MnAs thin films grown on GaAs(001)4 and on
GaAs(111) substrates.14 We varied MnAs shell thickness
and GaAs core diameter from 10 to 20 nm and from 120
to 160 nm, respectively. Here we present the results of
a 10 nm thick MnAs shell on a ZB GaAs core (160 nm
in diameter) being closest to the NW geometry investi-
gated. The core/shell NW geometry caused a very large
boundary element matrix and we therefore limited the
wire length to 250 nm. The finite element mesh was gen-
erated using GMESH.17 The average edge length of the
tetrahedral elements around 5.5 nm was chosen close to
the micromagnetic exchange lengths and the field step-
ping was as small as 25 Oe.
Figure 3(a) shows the simulated hysteresis curve with
the magnetic field applied along the wire axis. The hys-
teresis shows a single domain reversal with a coercive
field of 4.85 kOe in good agreement with the measure-
ments. The energy barrier separating the two stable do-
3
FIG. 3. Simulated magnetic hysteresis curves of GaAs/MnAs
core shell nanowires with a ZB core and magnetic fields ap-
plied (a) along the wire axis (z) and (b) perpendicular to the
wire axis (x). In panel (b), we show hysteresis loops for the
magnetization component along the applied field direction x
and perpendicular to the wire axis M⊥, and along the wire
axis M(cid:107). AMR effect extracted from the simulated hysteresis
curves for magnetic fields (c) parallel and (d) perpendicular
to the wire axis.
main states is caused by the magnetocrystalline hard axis
being inclined with the wire axis. We used the simulation
results as the input to the standard heuristic description
of AMR:18
ρ = ρ⊥ +(cid:0)ρ(cid:107) − ρ⊥(cid:1) cos2 ϕ,
(1)
where ρ(cid:107) and ρ⊥ are the longitudinal and transversal
resistivities with respect to magnetization and ϕ the an-
gle between the magnetization and current density. For
the NW, the angle is given by the normalized magneti-
zation along the wire axis: cos ϕ = M(cid:107). Note that for
MnAs ρ(cid:107) < ρ⊥.19 Figure 3(c) shows that the AMR effect
calculated by Eqn. 1 is in very good agreement with the
measured MR loop in Fig. 2(c), reproducing shape and
coercive field well. Note that although there is a reduc-
tion in MR with increasing field, it does not explain the
linear background at higher magnetic fields. The overes-
timation in coercive field is attributed to an underestima-
tion of the MnAs shell width. Simulations with varying
NW geometries showed a decrease in coercive field with
increasing shell thickness. The experimental determina-
tion of the MnAs thickness from the TEM image was
challenging due to the low contrast between the core and
the shell and is held responsible for this discrepancy.
Figures 3(b) and 3(d) show the simulated hysteresis
curves and AMR loops for magnetic fields applied per-
pendicular to the wire axis [x-axis, see Fig. 1(c)]. Two
magnetization curves, M⊥ in the applied field direction
and M(cid:107) along the wire axis, are overlayed. The hys-
teresis reveals two discontinuous changes at 2.1 kOe and
3.4 kOe: the two facets aligned within the applied field
[upper and lower facet, cf. Fig. 1(c)] reverse at a lower
field, whereas all other facets that are inclined to the ap-
plied field direction switch at the higher field value at
once. The increase in magnetization along the wire axis
M(cid:107) between the two switching events originates from the
epitaxial relationship, i.e., the inclination of the hard axis
with respect to the wire axis and the alternation of the
angle in adjacent facets. Reducing the magnetic field
from saturation, the magnetization in the facets deviates
from the x-direction and aligns in the respective facet
planes, perpendicular to the "local" hard axis, to mini-
mize demagnetization and magnetocrystalline anisotropy
energies. This causes M(cid:107) of the upper and lower facet
to be antiparallel with M(cid:107) of all other facets, which in
turn gives rise to a small net M(cid:107) of the wire. Revers-
ing M⊥ is accompanied with reversing M(cid:107). If the upper
and lower facets reverse, M(cid:107) has the same orientation
in all facets between the two switching fields, giving rise
to a large M(cid:107). At larger fields the magnetization of the
slanted facets reverses, reducing the net M(cid:107). The cal-
culated switching fields are smaller than measured. A
possible source of error is the alignment of the NW in
the applied field. Although a sufficiently precise line-up
of the nanowire axis was easily achieved, the control over
the azimuthal orientation is challenging and might cause
the discrepancy. Disregarding the linear background, the
measured MR is well reproduced by the AMR effect de-
rived from the magnetization curve M(cid:107). A two-step re-
versal process and the reduction in MR between the two
reversal field steps due to a large M(cid:107) are correctly pre-
dicted.
In conclusion, low field MR measurements of single
GaAs/MnAs core/shell NWs reveal the AMR effect of
the wire segments with a ZB GaAs core superimposed
on a linear background. Both MR loops measured for
fields perpendicular and parallel to the wire axis are well
reproduced by micromagnetic simulations, even for a rel-
4
atively complex geometry. The combination of MR mea-
surements with micromagnetic simulations thus provides
a powerful means to gain insight into the domain struc-
ture and dynamic properties of functional ferromagnetic
nanostructures.
This work is supported by the Penn State Center for
Nanoscale Science under NSF DMR-0820404, and by
NSF ECCS-0609282, ONR N00014-09-1-0221, and the
Penn State Nanofabrication Facility NSF NNUN ECCS-
35765.
1D. D. Awschalom and M. E. Flatte, Nature Phys. 3, 153 (2007).
2M. Tanaka, Semicond. Sci. Tech. 17, 327 (2002).
3L. Daweritz, Rep. Prog. Phys. 69, 2581 (2006).
4R. Engel-Herbert, T. Hesjedal, and D. M. Schaadt, Phys. Rev.
B 75, 094430 (2007).
5M. Hilse, Y. Takagaki, J. Herfort, M. Ramsteiner, C. Herrmann,
S. Breuer, L. Geelhaar, and H. Riechert, Appl. Phys. Lett. 95,
133126 (2009).
6N. S. Dellas, J. Liang, B. J. Cooley, N. Samarth, and S. E.
Mohney, Appl. Phys. Lett. 97, 072505 (2010).
7Y. Takagaki, J. Herfort, M. Hilse, L. Geelhaar, and H. Riechert,
J. Phys.: Cond. Matter 23, 126002 (2011).
8A. Rudolph, M. Soda, M. Kiessling, T. Wojtowicz, D. Schuh,
W. Wegscheider, J. Zweck, C. Back, and E. Reiger, Nanoletters
9, 3860 (2009).
9C. Gao, R. Farshchi, C. Roder, P. Dogan, and O. Brandt, Phys.
Rev. B 83, 245323 (2011).
10C. H. Butschkow, E. Reiger, S. Geissler, A. Rudolph, M. Soda,
and D. Weiss,
D. Schuh, G. Woltersdorf, W. Wegscheider,
arXiv:1110.5507.
11C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter,
A. Fontcuberta i Morral, Phys. Rev. B 77, 155326 (2008).
and
12J. J. Berry, S. J. Potashnik, S. H. Chun, K. C. Ku, P. Schiffer,
and N. Samarth, Phys. Rev. B 64, 052408 (2001).
13J.-E. Wegrowe, D. Kelly, A. Franck, S. E. Gilbert, and J.-P.
Ansermet, Phys. Rev. Lett. 82, 3681 (1999).
14R. Engel-Herbert, T. Hesjedal, D. M. Schaadt, L. Daweritz, and
K. H. Ploog, Appl. Phys. Lett. 88, 052505 (2006).
15W. Scholz, J. Fidler, T. Schrefl, D. Suess, R. Dittrich, H. Forster,
and V. Tsiantos, Comp. Mat. Sci 28, 366 (2003).
16M. Donahue and R. McMichael, IEEE Trans. Mag. 43, 2878
(2007).
17C. Geuzaine and J.-F. Remacle, Internat. J. Numer. Methods
Engrg. 79, 1309 (2009).
18T. McGuire and R. Potter, IEEE Trans. Mag. 11, 1018 (1975).
19Y. Takagaki and K.-J. Friedland, J. Appl. Phys. 101, 113916
(2007).
|
1510.09176 | 1 | 1510 | 2015-10-30T17:50:44 | Electron-phonon coupling in suspended graphene: supercollisions by ripples | [
"cond-mat.mes-hall"
] | Using electrical transport experiments and shot noise thermometry, we find strong evidence that "supercollision" scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended graphene around room temperature. The power law dependence of the electron-phonon coupling changes from cubic to quintic with temperature. The change of the temperature exponent by two is reflected in the quadratic dependence on chemical potential, which is an inherent feature of two-phonon quantum processes. | cond-mat.mes-hall | cond-mat | Electron-phonon coupling in suspended graphene: supercollisions
by ripples
Antti Laitinen,1 Mika Oksanen,1 Aurélien Fay,1 Daniel Cox,1
Matti Tomi,1 Pauli Virtanen,1 and Pertti J. Hakonen1, ∗
1Low Temperature Laboratory, Aalto University,
P.O. Box 15100, FI-00076 AALTO, Finland
Abstract
Using electrical transport experiments and shot noise thermometry, we find strong evidence that
"supercollision" scattering processes by flexural modes are the dominant electron-phonon energy
transfer mechanism in high-quality, suspended graphene around room temperature. The power law
dependence of the electron-phonon coupling changes from cubic to quintic with temperature. The
change of the temperature exponent by two is reflected in the quadratic dependence on chemical
potential, which is an inherent feature of two-phonon quantum processes.
5
1
0
2
t
c
O
0
3
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
6
7
1
9
0
.
0
1
5
1
:
v
i
X
r
a
1
Electron-phonon coupling is the basic means to control energy transport in a variety of
devices which provide extreme sensitivity in calorimetry, bolometry, and radiation detection
(infrared/THz). Owing to thermal noise, such devices are typically operated at cryogenic
temperatures, at which the coupling between electrons and phonons becomes weak. Under
these conditions, graphene is expected to have an advantage owing to its small heat capacity
that allows fast operation even though its electron-phonon coupling becomes exceedingly
small near the Dirac point1 -- 7.
The weak electron-acoustic phonon coupling in graphene stems from the restrictions in
energy transfer caused by momentum conservation7. The maximum change of momentum
at the Fermi level is twice the Fermi momentum 2kF , which corresponds to phonon energy
ω2kF . This energy defines a characteristic temperature, the Bloch-Grüneisen temperature
by ω2kF = kBTBG, above which only a fraction of phonons are available for scattering with
electrons in the thermal window. Manifestations of this has been observed in resistance vs.
temperature measurements8, especially on electrolytically-gated graphene9.
The energy transfer limits due to momentum conservation are circumvented when acoustic
phonon scattering is assisted by other scattering processes, a.k.a. supercollision events, or
when energy is transferred to flexural phonons, which is a two-phonon process.7,10 -- 16 The
flexural phonon mechanism can dominate over the single acoustic phonon process, but to
win over supercollision cooling, extremely clean samples are required.10 Moreover, even if a
sample is free of impurities, other scattering mechanisms such as static or dynamic ripples
can still facilitate supercollisions.
e −T δ
The heat flow from the conduction electrons/holes to the lattice can be characterized by a
power law of the form P = Σ(T δ
ph), where Te is the electron temperature, Tph the phonon
temperature, Σ the coupling constant and δ a characteristic exponent17. Our monolayer
graphene experiments have been conducted near the Dirac point at charge densities n <
0.1−4.5·1011 cm−2, which corresponds to TBG < 42 K for longitudinal acoustic phonons (and
even lower for transverse acoustic and flexural phonons). Consequently, all our results have
been measured in the regime of T > TBG, where the scattering of electrons from acoustic
phonons leads to δ = 1 or δ = 5, depending whether Te << µ or Te > µ, respectively4.
Non-conventional pathways for cooling, the supercollision cooling or flexural two phonon
processes10, yield δ = 3 or δ = 5 for Te < µ or Te > µ, respectively.
In this work, we have employed shot noise thermometry in combination with conduc-
2
tance measurements to determine the electron-phonon coupling in high-quality, suspended
graphene monolayers. We demonstrate that cooling in our graphene samples, even though
their field effect mobility is µf > 105 cm2/Vs at low temperatures, takes place via supercolli-
sion phonon processes at temperatures Te = 200−600 K. We observe a power-law dependence
having δ (cid:39) 3 − 5, depending on the magnitude of the chemical potential µ = 10 − 73 meV
relative to kBTe. The change in the exponent agrees well with the cross-over behavior be-
tween δ = 5 and δ = 3 for the non-degenerate (kBTe > µ) and degenerate cases (kBTe < µ),
which also leads to a µ2 dependence seen in the data as a function of chemical potential. We
also find that the location of the cross-over between the two regimes is shifted by the Fermi
velocity renormalization caused by interactions. For the deformation potential, we obtain
D (cid:39) 64 eV over the full range of data. No increased relaxation rate due to optical phonon
scattering was found in our experiments at Te < 600 Kelvin. The origin of the supercollision
scattering can be understood to be small-scale ripples in the suspended graphene.
1
cm2 , which is close to 6 nF
The studied sample, with length L = 1.1 µm and width W = 4.5 µm, was manufactured
from exfoliated graphene using e-beam lithography and etching in hydrofluoric acid. Raman
spectroscopy was employed to verify that the sample was a monolayer graphene sheet. Before
measurements, the graphene was annealed by passing a current of 1.1 mA through the sample
(nearly 0.9 V in voltage) which evaporated resist residuals and resulted in a nearly neutral,
g = +0.4 V.
high-quality sample with the charge neutrality (Dirac) point located at V D
The gate capacitance was determined from the parallel model (and verified by the µ scale in
Fabry-Pérot interference patterns18): Cg = 4.7 nF
cm2 in a similar device
reported in Ref. 19. The residual charge carrier density was determined to be n0 = 0.8· 1010
cm2 from log(G) vs log(n) plot (see Fig. 1b) as a point where the linear behaviour levels
to a constant value at low charge densities n = Cg(Vg − V D
g ). Note that the slope of G(n)
on the log-log plot is nearly 1/2 which indicates ballistic behavior. The effective n0 is 20%
larger when making a similar log-log plot for the electron-phonon coupling vs. n. The initial
slope of G(n) was employed to determine the field effect mobility of µf > 105 cm2/Vs. The
inset of Fig. 1b displays the variation of zero-bias resistance R0 = dV /dIV =0 over chemical
potentials ranging ±73 meV across the Dirac point. The measured minimum conductivity
falls below 4e2
πh for high aspect
h approaching theoretical minimum conductivity σmin = 4e2
ratio samples20,21; the actual maximum resistance of the sample was 2.2 kΩ.
In addition to IV -characteristics and differential conductance Gd = dI
dV , we measured
3
zero-frequency shot noise SI and dS/dI (over 600-900 MHz) calibrated against a AlOx
tunnel junction in the same cooldown (see Ref. 22 for details). Poissonian noise is given
by Sp = 2q(cid:104)I(cid:105) where (cid:104)I(cid:105) is the average current. The Fano factor defines the noise level SI
compared to the Poissonian noise23, F = SI/Sp. In addition to gate voltage, the Fano factor
depends also on the bias voltage V . When the bias voltage is increased, electron-electron
interaction effects (in the so called "hot electron regime") and inelastic scattering effects
start to influence the Fano factor. For diffusive transport in local equilibrium, the Fano
factor is related to electronic temperature:24,25 Te = F eV
. This equation is the basis of our
noise thermometry on graphene electrons. Our experiments were performed on a dilution
refrigerator operated typically around 0.5 K in our large bias experiments. For experimental
details, we refer to Ref. 18.
2kB
Figure 1. a) Schematic view of a suspended graphene sample, where metallic leads contact a
graphene flake (top part), and an optical image of the sample (lower part). A layer of silicon
oxide, part of which is etched away, separates the circuit from the back gate made of heavily doped
silicon. b) Logarithm of the conductivity as a function of the logarithmic charge carrier density
n = Cg(Vg − V D
g )/e. The solid line extrapolates towards the residual charge carrier density of
n0 = 0.8 · 1010 cm−2; the offset of the Dirac point due to charge doping is corrected. The inset
displays zero-bias resistance versus Vg. c) Thermal model of the sample: electrons are thermalized
to metallic leads via heat diffusion and electron-phonon coupling conduction in series with Kapitza
boundary resistance to the leads/substrate phonons.
Measured shot noise SI up to high bias is illustrated in Fig. 2a. Near the Dirac point,
strong initial increase in SI is found, which reflects a clearly larger Fano factor at small
charge densities n0 than at n >> n0. Rather smooth, symmetric increase in SI is observed
with bias current over the full range of bias conditions. In our experimentally determined
4
108109101010111012100.3100.6100.9n (1/cm2)G (mS)JouleheatingElectron system, TePhononsystem, TphElectron diffusionInelastic scatteringThermalizationto the leadsLeads, Tleads−1001005001000Vg (V)R (Ω)a)b)c)−505010002000R (Ω)Vg− VDirac (V) e-ph coupling, there is a difference in the prefactor of the power laws obtained at equal hole
and electron densities. We assign this to the presence of pn-junctions at Vg > V D
g , which
undermines the accuracy of our shot noise thermometry: at large bias voltages with enhanced
phonon scattering, the noise generated by the pn-junctions is an additive quantity to the
local thermal noise, and the resulting electronic temperatures are higher than what they
really should be. Consequently, we rely only on the data without pn-junction in our actual
analysis. The shot noise temperature is corrected for contact resistance, which increases the
measured temperatures by 20% in overall.
The Joule heating power to graphene electrons equals to Pe = (V − ∆Vcc)I where ∆Vcc
denotes the total voltage drop over the contacts ∆Vcc = RcI, where Rc = 40 Ω. The heat
flow paths in the sample, namely diffusive transport and inelastic scattering, that balance
Pe are depicted in Fig. 1 c. When the graphene lattice is at liquid helium temperatures or
below and the electron system is heated to 200−300 K, the electronic heat will flow mostly to
acoustic/flexural phonons at rate P = Qe−ph = Σ(cid:0)T δ
(cid:1), not to contacts by electronic
e − T δ
ph
diffusion. Under this Joule heat flux, elevation of the graphene acoustic phonon temperature
should remain below a few tens of Kelvins26, and the latter term T δ
ph can be neglected. In
order to improve the precision in the determination of δ, we subtract the electronic heat
conduction to obtain P from Pe. At Te < 100 K, we observe power-law behavior in Pe vs
Te with an exponent δ (cid:39) 1.627, but our accuracy is not enough to test modifications of the
Wiedemann-Franz law as achieved in Ref.28.
g < 0.6 V while, at Vg − V D
As indicated by the data on P vs Te in Fig. 2b, we observe for the electron-phonon
heat flow a power-law dependence having δ (cid:39) 3 − 5, depending on the chemical potential
µ = 10 − 73 meV: we find δ = 5 at Vg − V D
g > 5 V, we
observe δ = 3. At 0.6 V< Vg − V D
g < 5 V, our data display a cross-over from δ = 5 to
δ = 3. This cross-over takes place when the chemical potential reaches (cid:39) 20 meV, i.e. when
the electronic system starts to become degenerate (kBTe/µ < 1). This finding δ = 5 at
µ << kBTe is consistent with single acoustic phonon scattering at high temperatures1,4, but
the theoretical expectation for acoustic phonons at µ >> kBTe disagrees with our results.
Furthermore, the magnitude of the predicted e-ph coupling for δ = 5 is too small unless
an unrealistically large value for the deformation potential is adopted. Moreover, instead
of the expected µ-dependence of acoustic phonon scattering (P ∝ µ4 at TBG < T < µ;
P ∝ µ0 at TBG, µ < T ), we find µ2-dependence (or more precisely, linear in n, see below)
5
which contradicts single phonon scattering but agrees with flexural phonon and supercollision
scattering. Hence, we may rule out single phonon scattering events1,4 as the dominant e-ph
coupling in our suspended sample.
Figure 2. a) Shot noise vs. the bias current I at a few values of gate voltage near the Dirac point
at Vg = +0.4 V (Vg is given in the figure). b) Heat flow to phonons P as a function electron
temperature Te = F eV /2kB. The green, blue, and red curves represent measured data while
the dashed lines display the theoretical behavior from Eq. 1 with kF (cid:96) = 3 and D = 64 eV; for
other parameters, see text. The dotted lines denote power laws with exponents δ = 3 (upper) and
δ = 5 (lower). c) Electron-phonon coupling power as a function of the gate-induced charge carrier
g = +0.4 V (no pn-junction). The
density n at temperature Te = 150, 200, and 250 K for Vg < V D
theoretical lines are obtained from Eq. 1 using the same parameters as in Fig. 2b: the lines denote
the expansions at µ << kBTe (dashed lines) and at µ >> kBTe (solid lines).
The electron-phonon energy flow via supercollisions is predicted in Ref. 10. Taking into
account the energy dependence of the density of states in graphene, which leads to the
cross-over between the T 3
e power laws, the result reads:
√
e and T 5
QSTph=0 (cid:39) −
πn
vF
kBTe
N
(2π2v2
F )2
g2
Dk5
BkF (cid:96)
T 5
e q(
) ,
(1)
where q(z) (cid:39) 9.69 + 1.93z2 for z (cid:28) 5 and q(z) (cid:39) 2ζ(3)z2 ≈ 2.40z2 for z (cid:29) 5, and N = 4
is the degeneracy in graphene. The electron-phonon coupling constant for deformation
potential is gD = D/(cid:112)2ρs2 where D is the deformation potential and ρ the mass density
of the graphene sheet. The quantity kF (cid:96) is the dimensionless mean free path associated
with the additional scattering mechanism enabling the supercollisions. For experimental
convenience, we have also here written the above in terms of the particle density n which
is kept fixed by gate voltage. We take renormalization of the Fermi velocity by electron-
6
−1−0.500.51x 10−300.511.522.533.5x 10−5I (A)SI (W) +0.4 V−1.2 V−8 Va)01234x 1011020040060080010001200P (W/cm2)n (1/cm2) 150 K200 K250 K200600101102103104Te (K)P (W/cm2) +0.4 V (Dirac)−0.8 V−10 Vb)c) electron interactions29,30 into account by setting vF = vF (n, Te) with dependence on both
charge density and electronic temperature as detailed in the supplementary material.
Supercollision and flexural phonon scattering yield similar power law predictions10, but
can be distinguished from each other by comparing numerical estimations against measured
data. Although flexural phonon scattering may dominate over single acoustic phonon scat-
tering (when Te > 10TBG, where TBG refers to acoustic phonons), the ratio of heat flux via
flexural modes QF to that of supercollision heat flow QS is estimated as QF / QS = kF (cid:96)/200.
We may fit the supercollision formula Eq. 1 to our data ∝ T 3
g > 5 V using
the parameters vF = 1.0 · 106 m/s (at high energy) and D/(kF (cid:96))1/2 = 37 eV. Using the the
theoretical estimate D = 20 − 30 eV6,7, we may conclude that only supercollision cooling is
compatible with the results, as the heat flux is 100 times larger than what can be produced
by flexural two-phonon scattering.
e at Vg − V D
Fig. 2c displays the charge carrier density dependence of the electron-phonon cooling
power P at a fixed temperature. The calculated curves indicate the variation on n obtained
from the low- and high-µ expansions of Eq. 1 using the same parameters as above. Compar-
ison of the data at 150, 200, and 250 K indicate that the data scale with the ratio kBTe/µ
in accordance with the theory. The evident bumps at low/intermediate particle density are
assigned to resistance fluctuations that may cause bias-dependent modification of noise even
at the band 600-900 MHz31. The linear slope in n corresponds to µ2 dependence away from
the Dirac point where the velocity renormalization is negligible.
The value for kF (cid:96) for supercollision scattering is small for our sample at high bias. Possible
mechanisms contributing to this, in addition to short-range impurities, are dynamic and
static ripples32, as well as scattering from the edges (possibly magnetic) of the sample.
Coulomb impurities are not expected to contribute significantly to supercollisions. Ripples
can yield quite small kF (cid:96) for scattering, as estimated in Ref.33; STM results of Ref.32 indicate
kF (cid:96) (cid:39) 2 for a typical current-cleaned graphene sample such as ours at room temperature
(kF (cid:96) = 1.8 using amplitude of corrugation Z = 0.4 nm and radius of curvature R = 1.5 nm,
i.e. wave length ∼ 5 nm32). Both static and dynamic ripples are known to influence the
resistance of suspended graphene samples15,16.
Further information of the origin of the short kF (cid:96) in our experiment is found from the
results of resistance measurements in the same sample. At low bias, the results indicate
nearly ballistic behavior, which rules out scattering from static frozen-in ripples or short-
7
ranged impurities. Using our total square resistance R(cid:3) = (V /I)W/L vs. Te curve at
n (cid:39) 0.8· 1011 cm−2 (see the supplementary information), we find the temperature-dependent
e having a magnitude of ρi = 0.01(Te/K)2.
component in the resistivity that increases as T 2
This value for ρi is quite close to the results of Ref.16 on flexural phonon limited mobility in
suspended graphene. By interpreting ρi directly as a scattering length via kf (cid:96)r = h/(4e2ρi),
we find a small value kF (cid:96)r ∼ 7 at Te = 300 K, indicating an effective scattering mechanism
activated by the large bias; the subscript r refers to scattering events governing the resistance.
−1) denotes the T 2
The effect of quasielastic scattering from thermally excited flexular phonons on the su-
percollision energy flow is analyzed in Ref. 34. An effective kF (cid:96)eff for supercollisions can
be estimated from the resistance, given an adjustment for differences in characteristic wave
vector scales. Scattering leading to resistance occurs mainly on scales of max(kF , q∗), where
√
us/κ denotes the cut-off of the flexural modes due to strain u in the membrane.16
q∗ =
Supercollision energy transport is dominated by thermal phonons with qT = kBT /s. Here,
s = 2.1 · 104 m/s is the speed of the acoustic mode in graphene, and κ = 4.6 · 10−7 m2/s
is specified by the dispersion relation of the flexural modes ω = κq2. When kF < q∗ < qT
−1 (cid:39) 10(q∗/qT )2(4e2/h)ρiG,
(regime VI of Ref. 15), this leads to an effective value [kF (cid:96)E]
e dependent part of the resistivity and G ∝ log(q∗/qT ) is
where ρi (∝ [kF (cid:96)r]
a factor of the order of unity; the subscript E denotes that these scattering events govern the
energy exchange. We have estimated the strain u ≈ 4− 8· 10−4 from the gate voltage depen-
dence of the measured fundamental flexural mode frequency fres = 77 MHz: f − fres < 0.1
MHz over Vg = 0 − 10 V. In our analysis we employ u = 4 · 10−4, which minimizes the
u. Combining u = 4· 10−4
difference between our measured ρi and the calculated result ρi ∝ 1
with the value for ρi yields a temperature-independent result kF (cid:96)E (cid:39) 3 that can be employed
in Eq. 1; this bias-induced value for kF (cid:96)E is much smaller than expected for short-range
scatterers in high-quality graphene. However, smaller strain and q∗ and hence larger kF (cid:96)E
would be necessary for the results to be in line with previous results on resistance due to
flexural phonons, although these results are not fully comparable as they were measured at
small bias voltage.16
Taking kF (cid:96) as a materials parameter independent of the variation in the charge carrier
density, as is the case above, and using the above parameters in Eq. 1, we are able to fit
our results also in the non-degenerate case ∝ T 5
e and in the cross-over regime as depicted in
Fig. 2b. The fit indicates D = 64 eV which is by a factor of two larger than the theoretical
8
estimate D = 20 − 30 eV for the unscreened case6,7. Altogether, once the values of D = 64
eV and kF (cid:96) = 3 are fixed, the overall features of our data are accounted for by Eq. 1.
Compared with previous transport experiments5,12, our results on the electron-phonon
coupling are rather close in magnitude in the degenerate limit at high bias, even though our
samples are ballistic at low bias. This suggests that the mechanism for the electron-phonon
scattering may be similar, i.e. it could be ripples in both experiments. A strong contribution
is expected to arise from excited flexural modes, since they can be in a "hot-phonon-like"
non-equilibrium state as has been observed with optical phonons in carbon nanotubes under
similar conditions35,36. Such non-equilibrium state of ripples, however, is more likely in a
suspended sample than in a supported device.
Finally, photocurrent in suspended graphene p-n junctions has been found to be by an or-
der of magnitude larger than in supported structures; this enhancement has been attributed
to the elimination of a dominant electronic cooling channel via the surface phonons of the
polar SiO2 substrate37. Similar direct coupling to phonons has also been observed in single
walled carbon nanotubes38. Our experiments avoid these problems and address truly the
inherent electron-phonon coupling in graphene.
In summary, our experiments indicate strong supercollision cooling in the presence of
ripples in suspended graphene. We have achieved the first results on graphene cooling in
the high temperature limit demonstrating the T 5
e dependence for the electron-phonon heat
transfer.
In the low-Te limit, our results indicate quadratic dependence on the chemical
potential, which is a characteristic signature of non-conventional cooling processes. This µ2
behavior is in line with the cross-over, found at Te (cid:39) µ/kB, from the quintic high-Te behavior
to cubic in the low-Te regime. Our analysis yields for the deformation potential D = 64
eV. Most likely, the observed strong electron-phonon coupling originates from supercollision
events that are facilitated by a high-bias-induced ripple structure with a magnitude in line
with recent room temperature STM experiments on suspended graphene.
We acknowledge fruitful discussions with T. Heikkilä and M. Katsnelson. We have ben-
efited from interaction with M.F. Craciun and S. Russo within a scientific exchange pro-
gramme between Low Temperature Laboratory and Centre for Graphene Science at Exeter
University. Our work was supported by the Academy of Finland (contracts no. 135908 and
250280, LTQ CoE), by the EU-project RODIN FP7-246026, and by the European Science
Foundation (ESF) under the EUROCORES Programme EuroGRAPHENE. This research
9
project made use of the Aalto University Cryohall infrastructure. MO is grateful to Väisälä
Foundation of the Finnish Academy of Science and Letters for a scholarship.
∗ pertti.hakonen@aalto.fi
1 Kubakaddi, S. S. Phys. Rev. B 2009, 79, 75417.
2 Tse, W.-K.; Das Sarma, S. Phys. Rev. B 2009, 79, 235406.
3 Bistritzer, R.; MacDonald, A. Phys. Rev. Lett. 2009, 102, 206410.
4 Viljas, J. K.; Heikkila, T. T. Phys. Rev. B 2010, 81, 245404.
5 Betz, A. C.; Jhang, S. H.; Pallecchi, E.; Ferreira, R.; Fève, G.; Berroir, J.-M.; Plaçais, B. Nat.
Phys. 2012, 9, 109 -- 112.
6 Suzuura, H.; Ando, T. Phys. Rev. B 2002, 65, 235412.
7 Katsnelson, M. I. Graphene: Carbon in Two Dimensions, 1st ed.; Cambridge University Press,
2012.
8 Chen, J.-H.; Jang, C.; Xiao, S.; Ishigami, M.; Fuhrer, M. S. Nat. Nanotechnol. 2008, 3, 206 -- 9.
9 Efetov, D. K.; Kim, P. Phys. Rev. Lett. 2010, 105, 256805.
10 Song, J. C. W.; Reizer, M. Y.; Levitov, L. S. Phys. Rev. Lett. 2012, 109, 106602.
11 Graham, M. W.; Shi, S.-F.; Ralph, D. C.; Park, J.; McEuen, P. L. Nat. Phys. 2012, 9, 103 -- 108.
12 Betz, A. C. Phys. Rev. Lett. 2012, 109, 56805.
13 Graham, M. W.; Shi, S.-F.; Wang, Z.; Ralph, D. C.; Park, J.; McEuen, P. L. Nano Lett. 2013,
13, 5497 -- 502.
14 Chen, W.; Clerk, A. a. Phys. Rev. B 2012, 86, 125443.
15 Mariani, E.; von Oppen, F. Phys. Rev. B 2010, 82, 195403.
16 Castro, E.; Ochoa, H.; Katsnelson, M.; Gorbachev, R.; Elias, D.; Novoselov, K.; Geim, a.;
Guinea, F. Phys. Rev. Lett. 2010, 105, 16 -- 18.
17 Giazotto, F.; Heikkilä, T. T.; Luukanen, A.; Savin, A. M.; Pekola, J. P. Rev. Mod. Phys. 2006,
78, 217 -- 274.
18 Oksanen, M.; Uppstu, A.; Laitinen, A.; Cox, D. J.; Craciun, M.; Russo, S.; Harju, A.; Hako-
nen, P. arXiv.org:1306.1212 2013.
19 Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L.
Solid State Commun. 2008, 146, 351 -- 355.
10
20 Katsnelson, M. I.; Novoselov, K. S.; Geim, A. K. Nat. Phys. 2006, 2, 620 -- 625.
21 Tworzydlo, J.; Trauzettel, B.; Titov, M.; Rycerz, A.; Beenakker, C. W. J.; J., B. C. W. Phys.
Rev. Lett. 2006, 96, 246802.
22 Danneau, R.; Wu, F.; Craciun, M. F.; Russo, S.; Tomi, M. Y.; Salmilehto, J.; Morpurgo, A. F.;
Hakonen, P. J. J. Low Temp. Phys. 2008, 153, 374 -- 392.
23 Blanter, Y. M.; Büttiker, M. Phys. Rep. 2000, 336, 1.
24 Wu, F.; Virtanen, P.; Andresen, S.; Placais, B.; Hakonen, P. J. Appl. Phys. Lett. 2010, 97,
262115.
25 Santavicca, D. F.; Chudow, J. D.; Prober, D. E.; Purewal, M. S.; Kim, P. Nano Lett. 2010, 10,
4538 -- 43.
26 Balandin, A. A. Nat. Mater. 2011, 10, 569 -- 581.
27 Compare with Tarkiainen, R.; Ahlskog, M.; Hakonen, P.; Paalanen, M. J. Phys. Soc. JAPAN
2003, 72, 100.
28 Fong, K. C.; Wollman, E. E.; Ravi, H.; Chen, W.; Clerk, A. A.; Shaw, M. D.; Leduc, H. G.;
Schwab, K. C. Phys. Rev. X 2013, 3, 041008.
29 Kotov, V. N.; Uchoa, B.; Pereira, V. M.; Guinea, F.; Castro Neto, A. H. Rev. Mod. Phys. 2012,
84, 1067 -- 1125.
30 Elias, D. C.; Gorbachev, R. V.; Mayorov, A. S.; Morozov, S. V.; Zhukov, A. A.; Blake, P.;
Ponomarenko, L. A.; Grigorieva, I. V.; Novoselov, K. S.; Guinea, F.; Geim, A. K. Nat. Phys.
2011, 7, 701 -- 704.
31 Wu, F.; Tsuneta, T.; Tarkiainen, R.; Gunnarsson, D.; Wang, T.-H.; Hakonen, P. J. Phys. Rev.
B 2007, 75, 125419.
32 Zan, R.; Muryn, C.; Bangert, U.; Mattocks, P.; Wincott, P.; Vaughan, D.; Li, X.; Colombo, L.;
Ruoff, R. S.; Hamilton, B.; Novoselov, K. S. Nanoscale 2012, 4, 3065 -- 8.
33 Song, J. C. W.; Reizer, M. Y.; Levitov, L. S. arXiv.org:1111.4678v1 2011.
34 Virtanen, P. arXiv.org:1312.3833 2013.
35 Yao, Z.; Kane, C. L.; Dekker, C. Phys. Rev. Lett. 2000, 84, 2941 -- 2944.
36 Lazzeri, M.; Piscanec, S.; Mauri, F.; Ferrari, A. C.; Robertson, J. Phys. Rev. Lett. 2005, 95,
236802.
37 Freitag, M.; Low, T.; Avouris, P. Nano Lett. 2013, 13, 1644 -- 1648.
38 Baloch, K. H.; Voskanian, N.; Bronsgeest, M.; Cumings, J. Nat. Nanotechnol. 2012, 7, 316 -- 319.
11
SUPPLEMENTARY INFORMATION FOR
"ELECTRON-PHONON COUPLING IN SUSPENDED GRAPHENE: SUPERCOL-
LISIONS BY RIPPLES"
I. RENORMALIZATION OF THE FERMI VELOCITY
(cid:16)
vF ((cid:126)k) ∼ vF,∗
1 +
ln
α∗
4
(cid:17)
In suspended graphene samples close to the Dirac point, the electronic spectrum and
the density of states is renormalized by electron-electron interactions, as discussed in Ref.
29. Effectively, the Fermi velocity increases at low energies, which then is also reflected
in the supercollision mechanism. Here, we account for the interaction effects via a simple
renormalization group (RG) procedure29. As electron states (cid:126)k > Λ are integrated out, the
effective electron-electron interaction α = e2/(4π0vF ) flows towards zero. The correspond-
ing velocity renormalization in the simplest approximation reads
Λ∗
√
πn, kBTe/vF,∗)
,
max((cid:126)k,
(S1)
where the renormalized velocity at scale Λ∗ is set as vF,∗ = 1.0· 106 m/s according to regular
tight binding parameters7, α∗ = α
= 1 with G = 2.2,30 and the scale Λ∗ is calculated at the
G
charge density 5× 1012 cm−2 yielding Λ∗ = kBvF,∗ × 2200 K. The Fermi velocity is momentum-
dependent and renormalized at µ = 0 to vF ((cid:126)k) at (cid:126)k < Λ∗. Temperature and chemical
potential both cut off the flow of vF , although the cross-over region when kF ∼ kBTe/vF,∗
is not completely accurately handled by this equation.
Electron-phonon supercollisions involve, in addition to initial and final low-energy states
whose energies are renormalized as described by Eq. (S1), a high-energy virtual electron
state at (cid:126)k ∼ (cid:126)q ∼ kBTe/(s) (cid:29) kF ; here s stands for the speed of sound. For typical
temperatures in our case, this is close to or above the cutoff Λ∗, where the variation of vF is
small, and we take vF ≈ vF,∗ in this regime. As the velocity renormalization results to a linear
√
spectrum below the Fermi level, the µ vs. n relationship remains simple, µ = vF (n, Te)
πn.
With these two provisions, the effect of velocity renormalization on supercollisions is obtained
by substituting Eq. (S1) for k = kF into Eq. (1) of the main text.
The main effect of the electron-electron interactions is to shift the cross-over point between
degenerate and non-degenerate regimes towards smaller charge densities as compared to
the noninteracting situation. For n ∼ 1010 cm−2, we have vF /vF,∗ ∼ 1.3 . . . 1.6 between
T = 10 . . . 500 K.
12
II. DETAILS OF THE ELECTRICAL CHARACTERISTICS
In our experiments, we measured the electrical characteristics of the sample both at
DC and at low-frequency AC (dynamic resistance). The strength of the flexural phonon
scattering was determined from the measured total square resistance R(cid:3) = (V /I)W/L il-
lustrated in Fig. 3 at 0.8 · 1011 cm2 (Vg = -2.4 V) as a function of Te, with Te determined
from the shot noise thermometry. The behavior of R(cid:3) is well fit with a quadratic tem-
perature dependence as expected for flexural phonon scattering16. From the fit we obtain
R(cid:3) = [1390 + 0.01(Te/K)2] Ω which was employed for determining the pure temperature-
dependent part ρi = 0.01(Te/K)2 employed in the main text.
Figure 3. Total square resistance R(cid:3) = (V /I)W/L as a function of the electronic temperature
deduced from the Fano factor using Te = F eV /2kB (n = 0.8 · 1011 cm−2). The fit function is
R(cid:3) = [1390 + 0.01(Te/K)2] Ω.
We also measured the zero-bias AC resistance R0 as a function of temperature which
turned out to be irregular because residual gas got desorbed from surfaces in the vacuum
chamber while the cryostat was warming up. The desorbed gas became partly readsorbed
on to the clean, current-annealed sample, causing a shift of the Dirac point due to charge
doping, most likely due to oxygen. Nevertheless, the data could be fit pretty well with
13
05010015020025030014001600180020002200Te (K)R (Ω) e -term close to the above ρi. However, we
quadratic temperature dependence, yielding a T 2
consider the determination based on V /I more reliable than our R0 analysis, because it
probes the scattering under the same conditions as those prevailing in the actual electron-
phonon coupling measurement.
The IV-curve measured at the same charge density n = 0.8 · 1011 cm−2 is illustrated in
Fig. 4. The IV-curve reflects the clear increase of R(cid:3) along with the bias voltage V . The
differential resistance Rd = dV /dI, measured by lock-in methods, corresponds to the inverse
slope of the IV-curve. The main purpose of Rd(V ) measurements was to determine the
coupling strength of the noise from the sample to the preamplifier.
Figure 4. IV-curve at Vg = -2.4 V measured over a voltage range in which the electronic temperature
Te, determined from the shot noise thermometry, traverses the same T−range as displayed in Fig.
3.
III. ANALYSIS OF THE POWER LAWS
The heat flow from electrons to the phonon system is characterized by the power law
P ∝ T δ
ph). We observe
power laws δ = 5 and 3, near and far from the Dirac point, respectively. This transition was
e (where we have dropped the small phonon temperature term T δ
14
−0.2−0.100.10.2−0.5−0.2500.250.5V (V)I (mA) Figure 5. Measured heat flow from electrons to phonons (data from Fig. 2c in the main text)
e and displayed as a function of Te for three gate voltage values indicated in the
normalized by T 5
figure.
illustrated in the main text using direct plotting on log-log frame. Here we replot the data
e . The curve closest to the Dirac point
in Fig. 5 by normalizing the power flow P with T 5
is almost completely flat, which indicates T 5
e -dependence. Slightly off from the Dirac point
(Vg = -0.8 V) we observe a weakly declining curve, which belongs to the cross-over region
from δ = 5 towards δ = 3. Far away from the Dirac point (Vg = -10 V), we obtain steeper
behavior, close to 1/T 2
e , which corresponds to δ = 3.
15
20025030035040045050000.20.40.60.81x 10−9Te (K)P/Te5 (W/(K5cm2))+0.4 V (Dirac)−0.8 V−10 V |
1102.0039 | 1 | 1102 | 2011-01-31T23:34:12 | Spontaneous Emergence of Persistent Spin Helix from Homogeneous Spin Polarization | [
"cond-mat.mes-hall"
] | We demonstrate that a homogeneous spin polarization in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling decays spontaneously toward a persistent spin helix. The analysis of formation of spin helical state is presented within a novel approach based on a mapping of spin drift-diffusion equations into a heat equation for a complex field. Such a strikingly different and simple method allows generating robust spin structures whose properties can be tuned by the strength of the spin orbit interaction and/or structure's length. We generalize our results for two-dimensional case predicting formation of persistent spin helix in two-dimensional channels from homogeneous spin polarization. | cond-mat.mes-hall | cond-mat | Spontaneous Emergence of Persistent Spin Helix from Homogeneous Spin Polarization
Valeriy A. Slipko,1, 2 Ibrahim Savran,3 and Yuriy V. Pershin1, ∗
2 Department of Physics and Technology, V. N. Karazin Kharkov National University, Kharkov 61077, Ukraine
1Department of Physics and Astronomy and USC Nanocenter,
University of South Carolina, Columbia, SC 29208, USA
3Department of Computer Science and Engineering,
University of South Carolina, Columbia, SC 29208, USA
1
1
0
2
n
a
J
1
3
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
9
3
0
0
.
2
0
1
1
:
v
i
X
r
a
We demonstrate that a homogeneous spin polarization in one-dimensional structures of finite
length in the presence of Bychkov-Rashba spin-orbit coupling decays spontaneously toward a persis-
tent spin helix. The analysis of formation of spin helical state is presented within a novel approach
based on a mapping of spin drift-diffusion equations into a heat equation for a complex field. Such
a strikingly different and simple method allows generating robust spin structures whose properties
can be tuned by the strength of the spin orbit interaction and/or structure's length. We generalize
our results for two-dimensional case predicting formation of persistent spin helix in two-dimensional
channels from homogeneous spin polarization.
PACS numbers: 72.15.Lh, 72.25.Dc, 85.75.2d
The helical wave of rotating spin orientation is re-
ferred to as the spin helix. There is a significant interest
to spin helix configurations in semiconductor materials
since the electron spin relaxation of such spin configura-
tions can be partially [1 -- 3] or even completely suppressed
[4, 5]. While a partial suppression of spin relaxation in
two-dimensional systems becomes possible in the pres-
ence of only Bychkov-Rashba [6] spin-orbit coupling (see
Refs. [1, 2]), the complete suppression of spin relaxation
requires a specific combination of Bychkov-Rashba and
Dresselhaus [7] interactions as it was demonstrated in
Ref.
[4]. More generally, the relaxation of the spin he-
lix is an example of situations [1 -- 5, 8 -- 17] when electron
spin relaxation scenario deviates from the predictions of
D'yakonov-Perel' theory [18].
Experimentally, the spin grating technique [19] is typ-
ically used [3, 5] to create spin helical configurations in
semiconductors. In this method, a sample is illuminated
by a pair of pump beams with orthogonal linear polariza-
tions. The interference of such beams results in a spacial
modulation of light helicity. Correspondingly, through
the optical orientation effect, a modulation of spin polar-
ization in the form of spin helix is produced. Moreover, a
spin injection from a ferromagnetic material into a semi-
conductor can also be used to excite a spin helix [20].
In this approach, the rotating spin polarization is caused
by coherent spin precession of electrons drifting in an
applied electric field. However, the present authors are
not aware about any experimental studies of spin helixes
excited by spin injection.
In this Letter, we propose an alternative approach
to induce spin helical configurations. Specifically, we
demonstrate that in one-dimensional (1D) systems of fi-
nite length with Bychkov-Rashba spin-orbit coupling the
spin helical configurations emerge in the process of re-
laxation of homogeneous spin polarization (see Fig. 1).
Mathematically, such a strikingly unexpected transfor-
mation of homogeneous spin polarization into the per-
sistent spin helix occurs when we introduce boundary
conditions on electron space motion to describe finite-
length structures (in infinite systems the homogeneous
spin polarization decays exponentially as predicted by
D'yakonov-Perel' theory [18]). Using a novel approach
that maps spin drift-diffusion equations into a heat trans-
fer equation for a complex field we find the exact time-
dependence of the spin polarization dynamics. It is inter-
esting that the amplitude of the resulting spin helix has
an oscillatory dependence on the system's length. Below,
we provide an intuitive explanation of this result based
on properties of solution of heat equation. Moreover, it
is necessary to emphasize that our theory is generalized
for the case of two-dimensional (2D) channels and can
be straightforwardly verified experimentally.
In partic-
ular, experimentally, the homogeneous spin polarization
can be easily created using the optical orientation by cir-
cularly polarized light. Therefore, we believe that our
approach would simplify tremendously the generation of
long-living spin helical configurations in semiconductor
structures and advance the field of spin storage in semi-
conductors.
FIG. 1: (Color online) Schematics of spontaneous transfor-
mation of homogeneous spin polarization into persistent spin
helix in a finite length system with Bychkov-Rashba spin-orbit
coupling.
0=t∞→t 2
FIG. 2:
(Color online) Dynamics of formation of persistent spin helix from homogeneous spin polarization pointing in z
direction at t = 0. These plots were obtained using Eq. (13) at ηL = 15.45. This value of the parameter ηL corresponds to
the second local maximum of spin helix amplitude shown in Fig. 3.
Let us consider dynamics of electron spin polariza-
tion in a 1D system of a length L in x direction in the
presence of Bychkov-Rashba spin-orbit coupling. In one-
dimensional limit, spin drift-diffusion equations [2] can
be written as
∂Sx
∂t
∂Sy
∂t
∂Sz
∂t
= D∆Sx + C
= D∆Sy,
= D∆Sz − C
∂Sz
∂x
− 2γSx,
∂Sx
∂x
− 2γSz,
(1)
(2)
(3)
where D = (cid:96)2/τ is the coefficient of diffusion, ∆ =
∂2/∂x2, C = 2ηD is the constant describing spin rota-
tions, γ = η2D/2 is the coefficient describing spin relax-
ation, η = 2αm−1 is the spin precession angle per unit
length, α is the spin-orbit coupling constant, m is the ef-
fective electron mass, (cid:96) is the mean free path and τ is the
momentum relaxation time. It follows from Eq. (2) that
y component of spin polarization, Sy, is not coupled to
any other component of spin polarization. Consequently,
selecting Sy(x, t = 0) = 0 we can safely take out Sy from
our consideration. Eqs. (1,3) are complimented by stan-
dard boundary conditions [21]
(cid:19)
(cid:18)
(cid:19)
+ CSz
= 0,
2D
Γ
∂Sz
∂x
− CSx
= 0. (4)
Γ
Here, Γ = [x = 0, x = L]. Mathematically, the bound-
ary conditions (4) are so-called third-type boundary con-
ditions. This specific form of boundary conditions con-
serves the spin polarization of electrons that scatter from
the sample edges. We assume that at the initial moment
(cid:18)
2D
∂Sx
∂x
of time the spin polarization is homogeneous and points
in z direction, that is
Sx(x, t = 0) = 0, Sz(x, t = 0) = S0.
(5)
Let us introduce a complex polarization S = Sx + iSz.
It is straightforward to show that Eqs. (1,3) and bound-
ary conditions (4) can be rewritten in a more compact
form using S:
∂S
∂t
= D
(cid:18)
∂2S
∂x2 − iC
∂S
∂x
− iCS
2D
∂S
∂x
− 2γS,
(cid:19)
= 0.
Γ
Defining a complex field u(x, t) by the relation
u(x, t) = e−iηxS(x, t),
(6)
(7)
(8)
we find that Eq. (6) transforms into the heat equation
∂u
∂t
= D
∂2u
∂x2 ,
(9)
supplemented by Neumann (or second-type) boundary
conditions
= 0.
(10)
(cid:18) ∂u
(cid:19)
∂x
Γ
Moreover, it is worth noticing that the initial conditions
for u(x, t) are related to the initial conditions for S as
u(x, t = 0) = e−iηxS(x, t = 0).
(11)
Consequently, the initially homogeneous spin polariza-
tion in z direction (Eq. (5)) corresponds to a spatially
modulated complex field
u(x, t = 0) = S0 sin (ηx) + iS0 cos (ηx) .
(12)
0.020.040.060.080.100.20.40.60.81.0Sz/S0Time (in units of L2/D)x (in units of L)-0.250000.25000.50000.75001.000(a)0.020.040.060.080.100.00.20.40.60.81.0Sx/S0(b) Time (in units of L2/D)x (in units of L)-0.250000.25000.50000.75001.000 The solution of Eq.
(9) with the boundary condi-
tions (10) and initial condition (12) was obtained by the
method of separation of variables. It can be presented in
the form
3
S(x, t)
sin(ηL/2)
= i
S0
ηL/2
1 − (−1)ne−iηL
(ηL)2 − (πn)2 e
+∞(cid:88)
n=1
eiη(x−L/2) +
− π2 n2Dt
L2
cos
(cid:16) πnx
(cid:17)
. (13)
L
2ηLeiηx
This is our main analytical result describing dynamics
of spin polarization in 1D finite-length structures. Note
that Sx and Sz components of spin polarization are given
(13), respectively.
by real and imaginary parts of Eq.
The first term in the right-hand side of Eq.
(13) de-
scribes the persistent profile of spin polarization (in the
form of spin helix) emerging at long times. Concerning
the second term in the right-hand side of Eq. (13), it
governs the dynamics of transformation of the initially
homogeneous spin polarization into the persistent spin
helix. Fig. 2 demonstrates dynamics of Sz and Sx com-
ponents of spin polarization given by Eq.
It is
clearly seen that the initially homogeneous spin polariza-
tion in z directions transforms into the persistent spin
helix with an (infinitely) long lifetime.
(13).
Explicitly, in the long time limit, the spin polarization
is given by
Sx(x, t = +∞) = −S0
Sz(x, t = +∞) = S0
sin(ηL/2)
ηL/2
sin(ηL/2)
ηL/2
sin(η(x − L/2)), (14)
cos(η(x − L/2)). (15)
In these equations the factor sin(ηL/2)/(ηL/2) defines
reduction of the spin helix amplitude with the respect to
the initial amplitude of homogeneous spin polarization
S0. We plot this function in Fig. 3.
It is interesting
that the spin helix amplitude is an oscillating function of
the parameter ηL and takes zero values when ηL = 2πn
where n is a positive integer. The positions of local max-
ima can be found numerically.
In particular, positions
of four local maxima shown in Fig. 3 are 8.987, 15.450,
21.808, 28.132.
The heat equation is the best starting point to under-
stand the oscillatory dependence of spin helix amplitude
on ηL depicted in Fig. 3. Accordingly to Eq. (11), the
initially homogeneous initial condition (Eq. (5) for spin
diffusion equations transforms into a modulated initial
condition for the heat equation. As the solution of heat
equation in the given context represents simply the pro-
cess of temperature equilibration along the system, an
integer number of modulation periods results in zero av-
erage "temperature" and, correspondingly in zero spin
helix amplitude. Moreover, we would like to mention
that the spin helix formation process is described by a
series of exponentially decaying terms whose time con-
stants are given by τn = L2/(π2n2D). The longest of
FIG. 3: (Color online) Normalized amplitude of the persistent
spin helix as a function of ηL.
Insets show schematically
distributions of Sx and Sz at several specific values of ηL as
indicated by arrows. Positions of minima and maxima points
of the amplitude are discussed in the text.
these times τ1 = L2/(π2D) provides the time scale of
the transformation process. The dependence of spin pro-
cess on L is intuitively clear as electrons should "feel"
the system's length before the transformation ends. It's
also interesting that such a time can be longer or shorter
then the relaxation time of homogeneous spin polariza-
tion τh = 1/(Dη2). In particular, τ1/τh = (ηL/π)2 mean-
ing that τ1 < τh when ηL < π, the times are the same
when ηL = π, and τ1 > τh when ηL > π (see also Fig.
3).
In order to obtain an additional insight on spin re-
laxation of the radial spin helix, we have performed ex-
tensive Monte Carlo simulations employing an approach
described in Refs.
[8] and [22]. This Monte Carlo sim-
ulation method uses a semiclassical description of elec-
tron space motion and quantum-mechanical description
of spin dynamics (the later is based on the Bychkov-
Rashba coupling term). All specific details of the Monte
Carlo simulations program can be found in the references
cited above and will not be repeated here. A spin con-
servation condition was used for electrons scattering from
system boundaries. Generally, all obtained Monte Carlo
simulation results are in perfect quantitative agreement
with our analytical predictions thus confirming the mech-
anism of formation of persistent spin helix from homoge-
neous spin polarization. A comparison of selected ana-
lytical and numerical curves is given in Fig. 4.
The results reported in this paper can be readily gen-
eralized for the persistent spin helix in two dimensions
[4].
Indeed, it can be easily seen that in the case of
equal strength of Bychkov-Rashba and Dresselhaus spin-
orbit interactions, α = β (where β is the Dresselhaus
0510152025300.00.20.40.60.81.0xxx Spin Helix Amplitudeη LxSxSz 4
trol of spin helix characteristics is achievable via appro-
priate choice of the above mentioned parameters. This
suggested technique facilitates generation of spin helical
states and can be used in both one- and two-dimensional
geometries.
I. S. acknowledges PhD scholarship from the Repub-
lic of Turkey Ministry of National Education, Grant No:
MEB1416.
∗ Electronic address: pershin@physics.sc.edu
1 Y. V. Pershin, Phys. Rev. B 71, 155317 (2005).
2 Y. V. Pershin and V. A. Slipko, Phys. Rev. B 82, 125325
(2010).
3 C. P. Weber, J. Orenstein, B. A. Bernevig, S.-C. Zhang,
J. Stephens, and D. D. Awschalom, Phys. Rev. Lett. 98,
076604 (2007).
4 B. A. Bernevig, J. Orenstein, and S.-C. Zhang, Phys. Rev.
Lett. 97, 236601 (2006).
5 J. D. Koralek, C. P. Weber, J. Orenstein, B. A. Bernevig,
S.-C. Zhang, S. Mack, and D. D. Awschalom, Nature 458,
610 (2009).
6 Y. Bychkov and E. Rashba, JETP Lett. 39, 78 (1984).
7 G. Dresselhaus, Phys. Rev. 100, 580 (1955).
8 A. A. Kiselev and K. W. Kim, Phys. Rev. B 61, 13115
(2000).
125310 (2004).
(2004).
98, 113702 (2005).
9 E. Y. Sherman, Appl. Phys. lett 82, 209 (2003).
10 M. Q. Weng, M. W. Wu, and Q. W. Shi, Phys. Rev. B 69,
11 Y. V. Pershin and V. Privman, Phys. Rev. B 69, 073310
12 L. Jiang, M. Weng, M. Wu, and J. Cheng, J. Appl. Phys.
13 P. Schwab, M. Dzierzawa, C. Gorini, and R. Raimondi,
Phys. Rev. B 74, 155316 (2006).
14 M. Q. Weng, M. W. Wu, and H. L. Cui, J. Appl. Phys.
15 P. Kleinert and V. V. Bryksin, Phys. Rev. B 79, 045317
103, 063714 (2008).
(2009).
80, 235327 (2009).
(2010).
3023 (1972).
76, 4793 (1996).
90, 146801 (2003).
16 M. Duckheim, D. L. Maslov, and D. Loss, Phys. Rev. B
17 I. V. Tokatly and E. Y. Sherman, Ann. Phys. 325, 1104
18 M. I. Dyakonov and V. I. Perel', Sov. Phys. Solid State 13,
19 A. R. Cameron, P. Riblet, and A. Miller, Phys. Rev. Lett.
20 J. Schliemann, J. C. Egues, and D. Loss, Phys. Rev. Lett.
21 V. M. Galitski, A. A. Burkov, and S. Das Sarma, Phys.
22 S. Saikin, Y. Pershin, and V. Privman, IEE-Proc. Circ.
Rev. B 74, 115331 (2006).
Dev. Syst. 152, 366 (2005).
FIG. 4: (Color online) Long-time distribution of Sz at ηL =
8.987 found employing Monte Carlo simulation approach.
The analytical curve is obtained using Eq. (15). The Monte
Carlo simulation was performed for 105 electrons in GaAs
structure of 1.7µm length. This plot obtained using the pa-
rameter values τ = 0.1ps, l = 10nm, α = 3·10−12eV m. Inset:
orientation of 2D channel for two-dimensional spin helix ex-
citation experiments.
spin-orbit coupling constant), the equations of spin dif-
fusion in 2D [4] take the general form of Eqs.
(1-3).
Therefore, introducing appropriate boundary conditions,
namely, reducing the system into a 2D channel in [-110]
direction (see the inset in Fig. 4), we obtain the situa-
tion completely equivalent to that in 1D from the point
of view of spin dynamics. Taking into account recent ex-
perimental demonstration of persistent spin helix [5] the
emergence of persistent spin helix from homogeneous spin
polarization can be straightforwardly detected. Finally,
we would like to note that the amplitude of persistent
spin helix can be increased by a repetitive excitation of
homogeneous polarization by a train of laser pulses.
In summary, we have demonstrated that persistent
spin helix forms in the process of relaxation of homo-
geneous spin polarization in finite length systems. This
observation can be used as a different technique for creat-
ing spin helical structures in semiconductors. The solu-
tion of spin drift-diffusion equations describing formation
of persistent helix was derived analytically and numeri-
cally using Monte Carlo simulation approach. The re-
sults obtained in both ways are in perfect agreement. It
is interesting that the persistent helix amplitude demon-
strates an oscillatory dependence on the system length
and strength of spin orbit interaction. Therefore, the con-
0.00.20.40.60.81.0-0.3-0.2-0.10.00.10.20.3[010] Sz/S0 Monte Carlo result Analytical resultx/L[100] |
1509.03373 | 1 | 1509 | 2015-09-11T01:43:24 | Effective spin Hall properties of a mixture of materials with and without spin-orbit coupling: Tailoring the effective spin-diffusion length | [
"cond-mat.mes-hall",
"cond-mat.dis-nn"
] | We study theoretically the effective spin Hall properties of a composite consisting of two materials with and without spin-orbit (SO) coupling. In particular, we assume that SO material represents a system of grains in a matrix with no SO. We calculate the effective spin Hall angle and the effective spin diffusion length of the mixture. Our main qualitative finding is that, when the bare spin diffusion length is much smaller than the radius of the grain, the effective spin diffusion length is strongly enhanced, well beyond the "geometrical" factor. The physical origin of this additional enhancement is that, with small diffusion length, the spin current mostly flows around the grain without suffering much loss. We also demonstrate that the voltage, created by a spin current, is sensitive to a very weak magnetic field directed along the spin current, and even reverses sign in a certain domain of fields. The origin of this sensitivity is that the spin precession, caused by magnetic field, takes place outside the grains where SO is absent. | cond-mat.mes-hall | cond-mat | a
Effective spin Hall properties of a mixture of materials with and without spin-orbit
coupling: Tailoring the effective spin-diffusion length
Z. Yue1, M. C. Prestgard2, A. Tiwari2, and M. E. Raikh1
1Department of Physics and Astronomy, University of Utah, Salt Lake City, UT 84112, USA
2Department of Materials Science and Engineering,
University of Utah, Salt Lake City, Utah 84112, USA
We study theoretically the effective spin Hall properties of a composite consisting of two materials
with and without spin-orbit (SO) coupling. In particular, we assume that SO material represents
a system of grains in a matrix with no SO. We calculate the effective spin Hall angle and the
effective spin diffusion length of the mixture. Our main qualitative finding is that, when the bare
spin diffusion length is much smaller than the radius of the grain, the effective spin diffusion length
is strongly enhanced, well beyond the "geometrical" factor. The physical origin of this additional
enhancement is that, with small diffusion length, the spin current mostly flows around the grain
without suffering much loss. We also demonstrate that the voltage, created by a spin current, is
sensitive to a very weak magnetic field directed along the spin current, and even reverses sign in a
certain domain of fields. The origin of this sensitivity is that the spin precession, caused by magnetic
field, takes place outside the grains where SO is absent.
PACS numbers: 85.75.-d,72.25.Rb, 78.47.-p
I.
INTRODUCTION
The spin Hall effect1 -- 3(SHE), predicted theoretically
more than four decades ago1,2,
is nowadays routinely
observed in many materials,4 -- 17 which include tradi-
tional and exotic metals, prominent semiconductors, and
graphene. Moreover, the inverse spin Hall effect (ISHE),
i.e. generation of voltage drop normal to the spin current,
was recently "put to work". It serves as a tool to detect
whether or not the spin current is injected into a non-
magnetic material from an ac-driven ferromagnet in the
course of spin pumping. Most recently18 -- 21 the pumped
spin currents in certain polymers were registered via in-
verse spin Hall voltage which they induced in Pt elec-
trode located at some distance from the interface with
ferromagnet.
The latest focus22 -- 24 of the research on the spin physics
in organics is the study of the properties of platinum-
containing π-conjugated polymers. In these materials Pt
atoms are embedded in the polymer backbone chains.
While the SO coupling, which is the origin of the SHE, is
very weak in polymers, adding of Pt creates the elements
of the backbone where it is locally strong. These elements
can be separated either by one or by three π-conjugated
spacer unit lengths.
In this regard, a general question
arises: how the spin Hall effect is realized in composite
materials where the strong SO and low SO domains are
intermixed? Note that, by now, all theoretical studies
of SO-related transport assumed that the SO coupling is
homogeneous.
The goal of the present paper is to develop an ele-
mentary theory which addresses the question formulated
above. Unlike Refs. 25 and 26, we will not specify a
mechanism of SO on the microscopic level, but rather
focus on purely "geometrical" aspects. Namely, we will
consider the following minimal model: a system of SO
grains is dissolved in a matrix with no SO. The question
FIG. 1.
(Color online) (a) Conventional geometry for the
inverse spin Hall effect. Spin current flowing along y causes
a buildup of the voltage, V ISH, between the edges z = ±L/2.
The buildup takes place as long as y is smaller than the spin
diffusion length, λ. (b) Schematic illustration of a "granular"
geometry, where the SO-coupled material is dissolved in the
matrix with no SO coupling. (c) microscopic scenario of ISHE
on a single spherical granule of a radius, a. Spin current with
polarization along x turns the sphere into an electrical dipole
directed normally to the current. The magnitude of a dipole
moment, Pc, depends on the ratio between a and λ, while the
electric field inside the granule is homogeneous.
we will be interested in is: what are the effective spin
Hall characteristics of the mixture.
Firstly, we address a mechanism of the formation of
the inverse spin Hall voltage between the edges of the
sample in the geometry of the mixture. Unlike the case
of homogeneous SO, this formation happens as follows.
The spin current turns each SO grain into an electric
dipole. All dipole moments are oriented normal to the
spin current. Thus the potentials they create at the up-
per and the lower boundaries of the sample add up. The
y✓azPcisisVISHVISHe↵⌧outs=1is(y)isdLzx(a)(b)(c) 2
difference of these potentials is the effective ISH voltage,
V SH
eff , of the mixture, which can be related to the effective
spin Hall angle, θSH
eff .
Naively, one would expect that, in a mixture of grains
eff = (na3)θSH
of density, n, and radius, a, the relation θSH
holds within a numerical factor. Here θSH is the spin Hall
angle of the bulk SO material. This is simply because
na3 is the volume fraction of the SO material. Equally,
one would expect that the effective spin relaxation time
of the mixture is 1/(na3) times longer than in the SO
material, so that spin diffusion length, λeff is related to
the spin diffusion length, λ, of the SO material as λeff =
(na3)−1/2λ.
The above expectations are correct only in the limit
when the grains are small enough, namely, a (cid:28) λ, so
that the portion of spin polarization, which is lost within
a single grain, is small. The opposite case of large grains,
a (cid:29) λ, is much less trivial. As we show below, in this
limit V SH
In other
words, at small λ, the effective spin-diffusion length sat-
urates. This finding can be loosely interpreted from the
perspective of diffusion in the presence of the absorbing
traps. The stronger is the absorption, the smaller is the
concentration of particles at the position of the trap.
eff ∼ λna2V SH, while λeff ∼
(na)1/2 .
1
eff
s
Finally, we will demonstrate that V SH
is sensitive to a
very weak magnetic field. In a homogeneous material, the
spin Hall effect gets suppressed in the field with Larmour
frequency Ω ∼ τ−1
, where τs is the spin-relaxation time.
For the mixture, the characteristic field is ∼ T −1, where
T is the diffusion time between the sample edges. This
is because spin precession takes place mostly outside the
grains. The paper is organized as follows.
II
we solve an auxiliary problem of electric the polarization
of a grain with a given radius, a, by the spin current.
The solution is then employed to calculate the effective
inverse spin Hall voltage in the mixture of grains with
concentration, n. Sensitivity of this voltage to a weak
longitudinal magnetic field is studied in Sect. III. In Sect.
IV the effective diffusion length, λeff, of the mixture is
expressed via λ, a, and the parameter na3. The physics of
elongation of λeff for small λ (cid:28) a is discussed in Sect. V.
Concluding remarks are presented in Sect. VI.
In Sect.
II. CALCULATION OF EFFECTIVE
CHARACTERISTICS OF THE MIXTURE
A. Single grain
The simplest way to incorporate the spin Hall effect
on a quantitative level27 is to add to the current density,
j = σE, the term γD curl P where σ and D are the
conductivity and the diffusion coefficient, respectively,
P (r) is the coordinate-dependent spin polarization. The
strength of the SO coupling is quantified by a dimension-
less parameter γ. The system of coupled equations for
FIG. 2. (Color online) (a) The cross section z = 0. Distri-
bution of the spin current in the (x, y)-plane in the presence
of a spherical grain, Eq. (38), is illustrated schematically for
r > a. Inside the grain, r < a, this distribution is determined
by Eq. (29). (b) Distribution of the spin polarization along
the radius, r, is plotted for Dout/Din = 2 and three values of
λ: a/λ = 0.2 (green), a/λ = 4 (blue), and a/λ = 12 (purple).
Enhancement of the effective spin diffusion length for small
λ/a is a result of a strong suppression of polarization near the
boundary r = a.
the spatial distribution of P (r) and j(r) reads27
j = σE + eγD curl P .
qij = −D
∂Pj
∂xi
+
γ
e
σεijkEk.
(1)
(2)
The second equation defines the component i of the flux
of the j-projection of spin polarization. The system be-
comes closed27 when it is complemented by the continuity
equation
∂qij
∂xi
+
Pj
τs
= 0.
(3)
Consider an isolated spherical grain with radius, a, and
with the strength of SO-coupling, γ, embedded into an
infinite medium with γ = 0 and with no spin relaxation,
τs = ∞, Fig. 1. Assume that the flux of spins, oriented
along the x-axis and flowing along the y-axis, is incident
on the grain. In application to the geometry, Fig. 1, the
essence of the inverse spin Hall effect is that the incident
spin current, is, induces an effective electric dipole on the
sphere. The induced dipole moment is perpendicular to
(a)(b) both, the current direction and polarization direction in
the incident flux, i.e. it is directed along the z-axis.
To calculate the magnitude, Pc, of the dipole moment
it is natural to switch to spherical coordinates in which
the incident polarization, Px = − is
y, and the spin-
Dout
current density, iy = is, have the form
is
Dout
r sin θ eφ,
P = −
where er, eθ, and eφ are the unit vectors along radial,
polar, and azimuthal axes, respectively, see Fig. 2.
is = is(sin θ er + cos θ eθ), (4)
Induced dipole moment along z creates an electrostatic
potential,
3
is(cid:0) 1
r
(cid:1) ∂P φ
reproduces Eq. (4).
where the first term is ∂P φ
out/∂r, while the second term
out/∂θ. At large distances the current Eq. (11)
There are two unknown constants, Pc and χs, in the
expressions for electric field and spin polarization inside
the sphere, and two unknown constants, Ein and P , in
the corresponding expressions outside the sphere. These
constants are determined from the four boundary condi-
tions at r = a:
(i) Continuity of the tangent component of electric field
Ein = −Pc
a3 .
(12)
(ii) Continuity of the normal component of the charge
ϕout = Pc cos θ
r2
,
current
(5)
outside the sphere.
From the form of ϕout we conclude that the θ-
dependence of ϕ inside the sphere is also proportional
to cos θ. This, together with Poisson's equation ∆ϕ = 0,
suggests that the induced electric field, Ein, inside the
sphere is homogeneous, so that
ϕin = −Einr cos θ.
(6)
Substituting Eq. (2) into Eq.(3), and taking into ac-
count that ∂Ein/∂xi = 0, we conclude that all the com-
ponents of polarization inside the sphere satisfy the dif-
fusion equation
Din∆Pj +
Pj
τs
= 0,
(7)
where Din is the diffusion coefficient inside the sphere.
As we will see below, the polarization, P (r), has only
φ-component inside the sphere and at all distances out-
side the sphere. As in the incident flux, Eq.
(4), the
angular dependence of Pφ is ∝ sin θ. Outside the sphere,
where ∆P = 0, the general form of Pφ is
Pout = −
is
Dout
(r +
χs
r2 ) sin θ eφ,
(8)
where the constant χs is the "spin polarizability". Inside
the sphere, the solution of Eq. (7), proportional to sin θ,
has the form
Pin = P i1(r/λ) sin θ eφ,
where P is a constant, and
λ = (Dinτs)1/2 ,
(9)
(10)
is the diffusion length. The function i1(x) is a modified
spherical Bessel function. We chose the function i1 be-
cause it is finite at x = 0.
While the polarization has only φ-component, the spin
current, defined as a flow of the φ-component of spin, can
be presented in the vector form
iφ = is
(1 −
2χs
r3 ) sin θer + (1 +
χs
r3 ) cos θeθ
,
(11)
(cid:104)
(cid:105)
a
(cid:16)
(cid:17)
is
Dout
−
a +
χs
a2
2eγDin P
σinEin +
i1(a/λ) =
2σoutPc
a3
.
(13)
(iii) Continuity of the spin polarization
= P i1(a/λ).
(14)
(iiii) Continuity of the spin flux though the boundary
Din P
λ
i(cid:48)1(a/λ) +
γ
e
σinEin = is
a3 − 1
.
(15)
(cid:16) 2χs
(cid:17)
The system Eqs. (12)-(15) yields the sought expression
for the spin-current-induced dipole moment
Pc = −
6ea3γ
(σin + 2σout)M
is,
(16)
where M in denominator is the dimensionless combina-
tion
M =
2Dout
Din −
2γ2σin
σin + 2σout
+
ai(cid:48)1( a
λ )
λi1( a
λ )
(17)
Naturally, the proportionality coefficient between Pc and
the spin current contains the first power of the SO cou-
pling strength, γ.
The second term in Eq.
(17) contains γ2, and can
be safely neglected. The ratio Dout/Din can be replaced
by σout/σin. It is seen from Eq.(17) that the factor M
depends strongly on the relation between the radius of
the sphere and the spin-diffusion length. For a (cid:28) λ the
last term in Eq. (17) is 1, while for λ (cid:28) a it is big and
equal to a/λ. In the latter case Eq. (16) yields Pc ∝ λa2.
This dependence has a simple interpretation. Namely,
for λ (cid:28) a the induced dipole is generated only inside a
spherical layer of a thickness ∼ λ near the surface of the
sphere, see Fig. 2.
Description of a direct spin Hall effect for a sphere is
completely similar to the case of the inverse spin Hall
effect considered above. A charge current, ic, along the
y direction generates a spin dipole moment, Ps, in the
z-direction. Analytical expression for Ps is similar to Eq.
(16)
Ps =
3σina3γ
e(σin + 2σout)DinM
ic.
(18)
4
FIG. 3.
(Color online) The effective spin Hall voltage is
the sum of contributions from individual SO-induced dipoles.
With density of granules, n, the typical distance between the
neighbors is n−1/3. It is much bigger than the radius, a, but
much smaller than the sample width, L, which allows to re-
place the sum by the integral Eq. (20).
FIG. 4. (Color online) Dependence of the effective ISHE volt-
age on a longitudinal magnetic field, ωL, is plotted from Eq.
(25) for three different positions. y0, in the units of (dL)1/2,
along the sample. Blue, violet, and green curves correspond
to y0 = 2, y0 = 4, and y0 = 6 , respectively.
B. Finite density of grains
Consider a sample of a rectangular shape with a width,
L, and thickness, d, (L (cid:29) d). As the injected spin cur-
rent flows through the cross section, the voltage builds
up between the edges z = ±L/2. The easiest way to
calculate this voltage is to sum the contributions of in-
dividual dipoles.
If a grain is located at a point with
coordinates (xi, yi, zi), see Fig. 3, then the potential dif-
ference between the edges, created by an induced dipole
reads
V (xi, yi, zi) =
( L
2 − zi)Pc
i + ( L
i + y2
[x2
(cid:16)
−
−
[x2
3
2
2 − zi)2]
( L
2 + zi)Pc
i + ( L
i + y2
2 + zi)2]
(cid:17)
,
3
2
(19)
where Pc is given by Eq. (16). In calculating the effective
inverse spin Hall voltage the summation over dipoles is
replaced by integration
(cid:90) d
2
(cid:90) ∞
(cid:90) L
2
reduces to multiplication by d. The final result reads
V SH
eff (y0) = 2ndPc
(cid:34)
(cid:16) L
(cid:17)
(cid:16) 2y0
(cid:17)
ln
×
d
+ ln
− ln
d
(cid:32)(cid:113) L2
(cid:113) L2
y2
0
y2
0
(cid:33)(cid:35)
.
(21)
+ 1 + L
y0
+ 1
+ 1 + L
y0 − 1
At small distances from the injection point, d (cid:28) y0 (cid:28) L,
the first two terms in Eq. (21) dominate. The second
logarithm describes a gradual increase of V SH
eff with y0.
At large distances, y0 (cid:29) L, the second and the third
logarithms combine into ln(L/d) leading to the result
V SH
eff (∞) = 4ndPc ln
24e(na3)d ln( L
= −
(σin + 2σout)
d )γ
+ ai(cid:48)
1( a
λ )
λi1( a
λ )
(cid:105) is.
(22)
Note, that for highly conducting grain, both factors in
denominator do not depend on the characteristics, σout
and Dout, of the matrix.
eff depends
strongly on the relation between λ and a. Overall, Eq.
(21) describes the growth and subsequent saturation of
the inverse spin Hall voltage.
In this domain V SH
(cid:16) L
(cid:17)
(cid:104) 2Dout
d
Din
V SH
eff (y0) = n
dx
− d
2
dzV (x, y, z),
(20)
dy
− L
2
III. MAGNETIC-FIELD DEPENDENCE
−y0
where y0 is the distance from the point at which voltage
is measured to the point of spin-current injection. Natu-
rally, the replacement of the sum by integral is justified
when nL2d (cid:29) 1. The integration over y is straightfor-
ward. Subsequent integral over z diverges logarithmically
at z = L/2 and z = −L/2. This divergence should be
cut off at (z ± L/2) ∼ d. Then the integration over x
The behavior of V SH
eff with position, y0, becomes non-
trivial in the presence of magnetic field directed along
the y-axis, a somewhat similar effect was pointed out in
Ref. 27. If the magnetic field is weak, so that the Lar-
mour frequency, ωL, is much smaller that τ−1
and much
smaller than Dout/a2, which is the inverse diffusion time
through the grain, then the effect of magnetic field on
s
isVISHe↵(y0)yz(xi,yi,zi)PcPcPcPcisLdLn1/3zx0.51.01.52.02.53.0-0.20.00.20.4VSHe↵(!L)[arb.units](!L/2Dout)1/2 generation of electric dipole can be neglected. Instead,
the field affects only the polarization in the spin current
incident on the grain. This allows one to use the result
Eq. (16) in calculation the ωL-dependence of V SH
eff .
and Pz, satisfy the system of equations: Dout
Outside the grains, the polarization components, Px
d2Px
dy2 +
d2Pz
dy2 − ωLPx = 0. Assuming that
ωLPz = 0 and Dout
at the point of injection the polarization was along x, we
find
(cid:104)(cid:16) ωL
(cid:104)(cid:16) ωL
2Dout
(cid:17) 1
(cid:17) 1
2
2
(cid:105)
(cid:105)
y
y
2Dout
exp
exp
(cid:104)
(cid:104)
(cid:16) ωL
(cid:16) ωL
2Dout
(cid:17) 1
(cid:17) 1
2
2
(cid:105)
(cid:105)
y
,
y
.
2Dout
−
−
(23)
Px(y) =Px(0) cos
Pz(y) =Px(0) sin
(cid:34)
(cid:112)
dy
(cid:90) ∞
0
1
(y − y0)2 + d2 −
V SH
eff (y0, ωL) = 2ndPc
(cid:112)
1
(y − y0)2 + L2
5
Suppose that a grain is positioned at y = y0. Then the
induced dipole moment will be a vector orthogonal to
polarization with components
(cid:18) Px(y0)
(cid:19)
(cid:18) Pz(y0)
(cid:19)
Pc,
Px(0)
Px(0)
Pz(y0) =
Px(y0) = −
Pc,
(24)
where Pc, given by Eq. (16), is proportional to the mag-
nitude of the spin current, is, which does not change
in the presence of magnetic field. To proceed further,
we notice that only Pz-component of the induced dipole
moment contributes to the buildup of V SH
eff and should be
substituted into Eq. (19) instead of Pc. We first perform
integration over z and x. The remaining integral over y
takes the form
(cid:35)
(cid:104)(cid:16) ωL
2Dout
(cid:17) 1
2
(cid:105)
y
cos
exp
(cid:104)
(cid:16) ωL
2Dout
(cid:17) 1
2
(cid:105)
.
y
−
(25)
For ωL = 0 Eq.
(25) reproduces the limiting cases of
Eq. (21). With characteristic distance y0, being ∼ L, we
conclude that characteristic magnetic field is
ωL =
1
T
=
Dout
L2 ,
(26)
which is a natural scale at which the diffusion time
through a square with a side L is equal to the Larmour
period. Simple asymptotic expressions for V SH
eff can be
obtained in the domain ωL (cid:29) ωL, when the second term
in the integrand can be neglected:
(cid:16)
(cid:17)1/2
Dout/ωL
(i) d (cid:28) y0 (cid:28)
In this limit, the log-
divergence at large y is cut off at y ∼ (Dout/ωL)1/2, and
we get
.
V SH
eff (y0, ωL) = 2ndPc ln
(cid:17)1/2
(cid:16)
Dout/ωL
(ii) y0 (cid:29)
. We can now neglect y com-
pared to y0 in the square brackets. Then the integration
can be easily performed yielding
(cid:16)(cid:114) Dout
y0
d2
ωL
(cid:17)
(cid:16) Dout
(cid:17) 1
2
FIG. 5. (Color online) The effective spin diffusion length in
the units (3π2na)−1/2 is plotted from Eq.
(36) for ratios
Dout/Din: Dout/Din = 1 (green), Dout/Din = 5 (purple), and
Dout/Din = 10 (blue). Note the saturation of λeff at small λ .
(27)
V SH
eff (y0, ωL) = ndPc
ωLy2
0
IV. EFFECTIVE SPIN DIFFUSION LENGTH
.
(28)
The asymptotes Eq. (27), (28) do not cover the entire
domain of ωL. At the crossover field ωL ∼ Dout/y2
0 . Eq.
(27) exceeds Eq. (28) by a large factor ∼ ln(y0/d). As the
magnetic-field dependence of voltage is plotted numeri-
cally, see Fig. 4, it appears that in the intermediated do-
main the ISHE voltage exhibits two sign reversals. This
means that the oscillations in Eq. (23) do not average
out completely after integration over the positions of the
spheres.
There are two reasons why the effective spin-diffusion
length of the mixture exceeds λ. The first reason is obvi-
ous: the grains are sparse and there is no spin relaxation
in between the grains. The second reason is much more
subtle and becomes important when λ is much smaller
than the grain radius. Namely, the rate of the spin re-
laxation at the grain surface is suppressed. Formally,
this suppression, illustrated in Fig. 2, follows from the
behavior of polarization inside the grain
05101520253001234a/e↵/(3⇡2na)1/2 6
Substituting Eq. (33) into Eq. (34), we readily find
τeff =
Dinτs
3π2na3DoutF( a
λ )
.
(35)
Note that the product in the numerator is equal to λ2.
We can now use the expression for the effective relaxation
time to find the effective spin-diffusion length
λeff =
Doutτeff =
(36)
(cid:2)3π2na3F( a
λ )(cid:3)1/2 .
λ
(cid:112)
Din
Let us trace the decrease of λeff as the spin-diffusion
rate inside the sphere gradually decreases. For λ (cid:29) a,
the function F(x) can be replaced by F(0) =
4(2Dout+Din) .
Thus the enhancement of the spin-diffusion length due to
patterning the SO material into granules is ∼ (na3)−1/2.
In the opposite limit λ (cid:28) a we have F(x) ≈ 1/x2. This
leads to the unexpected conclusion that in this limit λeff
saturates at the value ∼
(na)1/2 . The origin of this sat-
uration is suppression of polarization at the surface, the
effect discussed above and further elaborated on in Ap-
pendix.
1
V. DISCUSSION
(21), (22) and Eq.
(i). The two main results of the present paper are
Eqs.
(36) for the effective inverse
spin Hall voltage and the effective spin diffusion length
of the mixture. It is convenient to cast Eq. (22) in the
form of the relation between the effective spin-Hall angle,
θSH
eff , of the mixture and the spin-Hall angle, θSH, of the
material of the grain. The spin Hall angle is defined as
the proportionality coefficient between the charge and
spin current densities, more precisely, jc = θSH(2e/)js.
Then Eq. (22) takes the form
(cid:16) L
(cid:17)
12(na3) ln
+ ai(cid:48)
2Dout
d
1( a
λ )
λi1( a
λ )
Din
(cid:16) i1( r
(cid:17)
λ )
i1( a
λ )
3ai1( r
λ )
λ ) + Din
Pin(r) = −
3a
DinM
is sin θ eφ
= −
2Douti1( a
is sin θ eφ.
(29)
a
λ i(cid:48)1( a
λ )
It is seen from Fig. 2 that, for λ = a/12, the radial
distribution of Pin(r) not only falls off rapidly from the
surface towards the center, but its value at the surface is
small. Physical origin of this smallness is elucidated in
the Appendix.
While our goal is to find λeff, in order not to deal with
boundaries we first calculate the effective spin relaxation
time of the mixture. Spin relaxation takes place only
inside the spheres. If at time t = 0 the polarization inside
the sphere is distributed according to Eq. (29), then the
rate of decay of this polarization is given by the integral
over the volume of the sphere
(cid:90)
(cid:104)
R =
1
τs
(cid:105)
φ
dΩ
Pin(r)
.
(30)
the
form,
=
Using
explicit
(x cosh(x) − sinh(x)) /x2,
the modified spherical
Bessel function, the integral can be evaluated, and the
result can be cast in the form
i1(x)
of
(cid:16) a
(cid:17)
λ
R =
3π2a4is
Dinτs
F
,
(31)
where the dimensionless function F(x) is defined as
F(x) =
x sinh(x) − 2 cosh(x) + 2
.
2( Dout
Din − 1)[x cosh(x) − sinh(x)]x + x3 sinh(x)
(32)
The result Eq.
(31) can be also expressed through
the polarization outside the sphere by replacing is by
PoutDout/a, see Eq. (8). One has
(cid:16) a
(cid:17)
λ
R =
3π2a3PoutDout
Dinτs
F
.
(33)
θSH
eff =
θSH,
(37)
In the absence of spin current, the spin relaxation in-
side the spheres causes the time decay of the spin po-
larization in the medium between the spheres. This is
because diffusing carriers eventually "hit" a sphere. Con-
sider an interval (y0− δy
2 ), and assume that there
are hard walls at the ends, so electrons do not flow in
or out. Then the initial net polarization, Pout(y0)δy, in-
side the interval will decay with some effective rate τ−1
eff .
To find this rate, we substitute the the two-dimensional
density of spheres in the interval, nδy, into the balance
equation
2 , y0 + δy
Pout(y0)δy
τeff
= nδyR.
(34)
where we assumed σin (cid:29) σout. Essentially, the propor-
tionality between θSH
eff and θSH is determined by a "volume
factor", na3. Note, however, that θSH is the characteris-
tics of a homogeneous SO-film, only as long as the film
thickness, w, is much smaller than λ. For w (cid:29) λ, θSH
falls off as λ/w. At the same time, the decay of θSH
eff with
y0 sets in only when y0 exceeds the effective spin diffusion
length of the mixture. This length is much bigger than
λ, as it was shown in Section IV.
(ii) Note that, strictly speaking, Eq. (36) describes λeff
only within a numerical factor. This factor was lost as we
replaced is by PoutDout/a, assuming that the first term
in Eq. (8) dominates. In fact, precisely at r = a, the two
terms almost cancel each other. Indeed, substituting the
expression for χs into Eq. (8), we can cast it in the form
(cid:32)
Pout = −
is
Dout
a3
r2 +
r −
(cid:104)
3a3
2 + aDini(cid:48)
1( a
λ )
λDouti1( a
λ )
(cid:33)
(cid:105)
r2
sin θ eφ.
(38)
In the limit λ (cid:28) a and r = a, the expression in the
brackets is equal to 3λDout/Din, and thus, is much smaller
than a. However, for bigger r ∼ a the compensation of
the first two terms does not take place, and the relation
is ∼ PoutDout/a holds.
The suppression of Pout near the surface of the sphere,
expressed by Eq. (38), is the reason why λeff saturates
when λ → 0, see Fig. 5. Loosely speaking, strong re-
laxation "repels" the spins from the boundary, which,
in turn, slows down the effective relaxation. The above
physics is quite general. To illustrate it, in the Appendix
we consider a model example of diffusion of particles in
the presence of an absorbing trap and demonstrate that,
with increasing the absorption rate, the concentration of
particles vanishes at the position of the trap.
(iii). It is instructive to compare our result Eq. (22)
with the expression for the perturbation of spin cur-
rent flowing in a normal metal around a ferromagnetic
sphere28. Rather that the SO coupling in our case, the
difference of spin-up and spin-down carriers in Ref. 28
is caused by the difference of their conductivities inside
the ferromagnet. As a result, the induced dipole mo-
ment in our case is normal to the spin current, while the
induced "spin dipole moment"28 is along the spin cur-
rent. Other than that, the two expressions resemble each
other. There is, however, an important difference.
If
the conductivity of the ferromagnetic sphere28 is much
higher than the conductivity of the surrounding normal
medium, then the perturbation of the spin current is sup-
pressed (resistance mismatch). On the contrary, for the
inverse spin Hall effect, the bigger is the ratio Din/Dout,
the stronger is the modification of the spin current out-
side the sphere.
(iiii). For a quantitative example of the effect of granu-
larity on the effective parameters of the mixture, assume
that the density of the SO granules is na3 = 10−2, while
the spin diffusion length in the material of the granule is
λ = 0.2a. Compared to the geometry in Fig. 1 with no
granularity we "lose" 100 times in the inverse spin Hall
voltage. At the same time, we gain in λeff. Substituting
λ = 0.2a into Eq. (36), and assuming Din (cid:29) Dout, we
find λeff = 10λ.
VI. CONCLUDING REMARKS
1. For experimentally verifying our theoretical results,
composites of SO and no SO materials can be prepared
using a variety of widely available fabrication techniques.
For example, in Ref. 29, authors used a pulsed laser de-
position technique to prepare a composite comprising of
gold nanoclusters embedded in ZnO matrix. In Ref. 30,
7
a self-assembly approach was used to fabricate a compos-
ite comprising of nickel nanoclusters embedded in amor-
phous Al2O3 matix. In Ref. 31, a nanofabrication ap-
proach was employed to prepare a magnonic crystal com-
prising of cobalt nanodots embedded in a permalloy film.
Similar approaches can be used to prepare the desired
composite structures of SO and no SO materials, say Pt
or Au nanodots (with large θSH) embedded in films of
low θSH materials (such as copper, molybdenum or even
semiconductors like silicon).
3.
2. From device point-of-view, an obvious way to en-
hance the spin diffusion length would be by creating a 1D
structure of alternating SO and no SO layers To achieve
this, however, the thickness of the SO-layer should be
smaller than λ. Conversely, in granular system the en-
hancement takes place when λ (cid:28) a. This is because the
spin current can flow around the spheres.
In numerous spin-pumping experiments, see e.g.
Refs. 4 -- 17, the measured quantity, V SH, is proportional
either to θSHλ, when the thickness of non-magnetic ma-
terial is much bigger than λ, or simply to θSH in the op-
posite limit. A comprehensive list of experimental values
of θSH and λ for a number of heavy metals can be found
in Ref. 32. This list indicates that, while, separately, θSH,
and λ vary within wide ranges, the range of change of
their product is much narrower, see also Ref. 33.
Overall, there is still experimental ambiguity in ex-
tracting the intrinsic SO parameters of materials from
the experiment.
In this regard, granularity can offer a
help, by bringing a new spatial scale, the radius of the
grain, a. As shown in Fig. 5, the value λeff depends very
strongly on the relation between λ and a.
4.
In a specific case of a semiconductor ZnO the
inverse spin Hall effect was studied both in pumping
experiment34 and directly by measuring the nonlocal
voltage35. In both measurements the value θSH was found
to be anomalously big, compared e.g. to Si14,15 . It has
recently been shown36 that the value θSH in ZnO can be
tuned very sensitively by changing the oxygen ambient
under which it is grown37. Films prepared under high
oxygen rich environment showed a large value for θSH
(∼ 0.1), while the films prepared under low oxygen am-
bient showed an order of magnitude lower value of θSH.
VII. ACKNOWLEDGEMENTS
The authors are grateful to E. G. Mishchenko for a use-
ful discussion. The work was supported by NSF through
MRSEC DMR-1121252.
Appendix A
Consider a diffusion in one dimension. If at time t = 0
the distribution of particles is a δ-peak, i.e. n(x, 0) =
(cid:90) ∞
0
8
The normalized solutions, ψk(x), which satisfy Eq. (A4)
have the form
ψk(x) =
1
π1/2 cos(kx + ϕk),
where the phase ϕk is found from the condition
tan ϕk = −
a
2Dτsk
,
(A7)
(A8)
imposed by Eq. (A6).
Upon substituting Eq. (A5) into Eq. (A3) and using
the initial condition, we arrive at the final result
(cid:90) ∞
0
n(x, t) =
1
π
cos kx + a
dk
1 + (
2Dτsk sin kx
2Dτsk )2
a
e−Dk2t.
(A9)
It is now convenient to introduce a dimensionless coor-
dinate x = x/(Dt)1/2 and the dimensionless time depen-
dent parameter t = a2t/4Dτ 2
s . In new variables Eq. (A9)
assumes the form
n(x, t) =
a
2πDτs√t
q2 cosxq + √tq sinxq
q2 + t
dq
e−q2
.
(A10)
We see that the characteristics of the trap, a and τs,
enter only into rescaling of time. In Fig. 6 we plot Eq.
(A10) for four different t. It is seen from Fig. 6 that,
with time, the density n(0, t) at the origin develops a
dip. The smaller is τs, i.e.
the more absorbing is the
trap, the sharper is the dip. This conclusion also follows
from the long-time asymptote of n(x, t), when we neglect
q2 in denominator compared to t. Then the integration
yields
n(x, t)
(cid:12)(cid:12)(cid:12)t(cid:29)1
(cid:17)
(cid:16)(cid:112)
(cid:17)
(cid:16) ax
tx + 1
+ 1
3
2
2Dτs
=
=
a
8√πDτst
√Dτ 2
s√πa2t
3
2
e− x2
4
e− x2
4Dt .
(A11)
This asymptote indicates that the ratio of concentrations
at half-width, x ≈ (Dt)1/2, and at the origin is ∼ t1/2,
i.e. the dip is deep.
The next question we ask ourselves is how the to-
tal number of particles(cid:82) dx n(x, t) decreases with time.
Upon integration Eq. (A10), we get
(cid:90) ∞
Then the expression for G(x,x',t) reads
N (t) =
dx n(x, t)
G(x, x(cid:48), t) =
ψk(x)ψk(x(cid:48)) exp(−Dk2t).
(A5)
−∞
=Erfc(t
2 ) exp(t) =
1
The second term in Eq.
(A4) plays the role of delta-
potential barrier, and causes the discontinuity of the
derivative of ψk
(cid:12)(cid:12)(cid:12)x=0+ −
∂ψk
∂x
(cid:12)(cid:12)(cid:12)x=0− =
∂ψk
∂x
a
Dτs
ψk(0).
(A6)
where Erfc(s) is the complementary error function. It is
seen from Eq. (A12) that the change of the decay rate
1 − a
(cid:16) t
(cid:16) πD
(cid:17) 1
τs
2τs
a
t
2
πD
2
(cid:17) 1
, t (cid:29) 1,
, t (cid:28) 1,
(A12)
FIG. 6. Diffusive spreading of the initial particle distribution
n(x, 0) = δ(x) in the presence of an absorbing trap located
at x = 0 is described by Eq.
(A10). Shown is n(x, t) at
a fixed time, t0, for different absorption efficiencies, κ, Eq.
(A13). The more absorbing the trap is, the deeper is the dip
at the origin, and the slower is the decay of the net number
of particles at long times, as follows from Eq. (A12).
δ(x), then it spreads with time as
n(x, t) =
1
2√πDt
exp
(cid:16)
(cid:17)
x2
4Dt
−
(A1)
where D is the diffusion coefficient.
Suppose now, that an absorbing trap is placed at the
coordinate origin. Then the spreading is governed by the
equation
∂n
∂t
−
= −D
∂2n
∂x2 +
aδ(x)n
τs
(A2)
where a is the size of the trap, and τs is the absorption
rate. Then the time-dependent concentration, n(x, t),
can be expressed through the Green function of Eq. (A2)
n(x, t) =
dx(cid:48)G(x, x(cid:48), t)n(x(cid:48), 0)
(A3)
It is convenient to present the Green function in terms
of eigenfunctions, ψk of Eq.
(A2), which satisfy the
Schodinger-like equation
∂2ψk
∂x2 +
− D
aδ(x)
τs
ψk = k2ψk.
(A4)
(cid:90)
(cid:88)
k
-6-4-202460246-6-4-202460.000.050.100.150.200.250.30-6-4-202460.0000.0010.0020.003n(x,to)n(x,to)n(x,to)(a)(b)(c)(x/Dto)1/2(x/Dto)1/2(x/Dto)1/2(a)=0.2(b)=2(c)=20to=⌧s[arb.units][arb.units][arb.units] 9
∂N/∂t takes place at t ∼ 1. This change is caused by the
development of the dip. Indeed, for t (cid:29) 1 the decay rate
falls off with time as t−3/2.
Overall, we conclude that the spreading of the parti-
cle density in the presence of a trap is governed by a
dimensionless parameter
then, n(x, t) will develop a dip at x = 0 and the decay of
the net number of particles will proceed even slower. For
large efficiency, the dip will developed early, namely at
t ∼ τs/κ2 (cid:28) τs, after which time the decay of N (t) will
be governed by the value of n(0, t) of the concentration
at the dip.
κ =
a
(Dτs)1/2 ,
(A13)
which is the dimensionless efficiency of absorption by the
trap. If this efficiency is small, the spreading will proceed
as in the absence of the trap for most of the time, until
the concentration at x = 0 becomes really small. Only
Formation of a dip in our model problem puts into
a general perspective the behavior of the effective spin
diffusion length in the system of the SO grains. In the
limit λ (cid:28) a, see Eq. (36), the value λeff saturates because
the polarization near the boundary gets suppressed as a
result of the development of a local minimum.
1 M. I. Dyakonov and V. I. Perel, Pis'ma Zh. Eksp. Teor. Fiz.
13, 657 (1971) [Sov. Phys. JETP Lett. 13, 467 (1971)].
2 M. I. Dyakonov and V. I. Perel, Phys. Lett. A 35, 459
(1971).
3 J. E. Hirsch, Phys. Rev. Lett. 83, 1834 (1999).
4 E. Saitoh, M. Ueda, H. Miyajima, and G. Tatara, Appl.
Phys. Lett. 88, 182509 (2006).
ringhaus, Nat. Mater. 12, 622 (2013).
19 S. Watanabe, K. Ando, K. Kang, S. Mooser, Y. Vaynzof,
H. Kurebayashi, E. Saitoh, and H. Sirringhaus, Nat. Phys.
10, 308 (2014).
20 Z. Qiu, M. Uruichi, D. Hou, K. Uchida, H. M. Yamamoto,
E. Saitoh, AIP Advances 5, 057167 (2015).
21 M. Kimata, D. Nozaki, Y. Niimi, H. Tajima, and Y. Otani,
5 H. Y. Inoue, K. Harii, K. Ando, K. Sasage, and E. Saitoh,
Phys. Rev. B 91, 224422 (2015).
J. Appl. Phys. 102, 083915 (2007).
6 K. Ando, S. Takahashi, K. Harii, K. Sasage, J. Ieda, S.
Maekawa, and E. Saitoh, Phys. Rev. Lett. 101, 036601
(2008).
7 K. Ando, T. Yoshino, and E. Saitoh, Appl. Phys. Lett. 94,
152509 (2009).
8 J.-C. Rojas-S´anchez, N. Reyren, P. Laczkowski, W. Savero,
J.-P. Attan´e, C. Deranlot, M. Jamet, J.-M. George, L. Vila,
and H. Jaffr`es, Phys. Rev. Lett. 112, 106602 (2014).
9 K. Ando, S. Takahashi, J.
Ieda, Y. Kajiwara, H.
Nakayama, T. Yoshino, K. Harii, Y. Fujikawa, M. Matsuo,
S. Maekawa, and E. Saitoh, J. Appl. Phys. 109, 103913
(2011).
10 O. Mosendz, J. E. Pearson, F. Y. Fradin, G. E. W. Bauer,
S. D. Bader, and A. Hoffmann, Phys. Rev. Lett. 104,
046601 (2010).
11 B. Heinrich, C. Burrowes, E. Montoya, B. Kardasz, E. Girt,
Y.-Y. Song, Y. Sun, and M. Wu, Phys. Rev. Lett. 107,
066604 (2011).
12 J. E. G´omez, B. Z. Tedlla, N. R. ´Alvarez, G. Alejandro,
E. Goovaerts, and A. Butera, Phys. Rev. B 90, 184401
(2014).
13 A. Yamamoto, Y. Ando, T. Shinjo, T. Uemura, and M.
Shiraishi, Phys. Rev. B 91, 024417 (2015).
14 K. Ando and E. Saitoh, Nat. Commun. 3, 629 (2012).
15 E. Shikoh, K. Ando, K. Kubo, E. Saitoh, T. Shinjo, and
M. Shiraishi, Phys. Rev. Lett. 110, 127201 (2013).
16 S. Dushenko, M. Koike, Y. Ando, T. Shinjo, M. Myronov,
and M. Shiraishi, Phys. Rev. Lett. 114, 196602 (2015).
17 S. Singh, A. Ahmadi, C. T. Cherian, E. R. Mucciolo, E. del
Barco, and B. Ozyilmaz, Appl. Phys. Lett. 106, 032411
(2015).
18 K. Ando, S. Watanabe, S. Mooser, E. Saitoh, and H. Sir-
22 B. Khachatryan, T. D. Nguyen, Z. V. Vardeny, and E.
Ehrenfreund Phys. Rev. B 86, 195203 (2012).
23 C.-X. Sheng, S. Singh, A. Gambetta, T. Drori, M. Tong,
S. Tretiak, and Z. V. Vardeny Sci. Rep. 3 (2013).
24 D. Sun, K. J. van Schooten, H. Malissa, M. Kavand, C.
Zhang, C. Boehme, and Z. V. Vardeny, unpublished.
25 Z. G. Yu, Phys. Rev. Lett. 106, 106602 (2011).
26 Z. G. Yu, Phys. Rev. B 85, 115201 (2012).
27 M. I. Dyakonov, Phys. Rev. Lett. 99, 126601 (2007).
28 R. C. Roundy and M. E. Raikh Phys. Rev. B 91, 045202
(2015).
29 A. Tiwari, A. Chugh, C. Jin, and J. Narayan, J. Nanosci.
Nanotechnol. 3, 368 (2003).
30 J. Narayan and A. Tiwari, J. Nanosci. Nanotechnol. 4, 726
(2004).
31 see e.g. S. Tacchi, G. Duerr, J. W. Klos, M. Madami, S.
Neusser, G. Gubbiotti, G. Carlotti, M. Krawczyk, and D.
Grundler Phys. Rev. Lett. 109, 137202 (2012), and refer-
ences therein.
32 H. L. Wang, C. H. Du, Y. Pu, R. Adur, P. C. Hammel,
and F. Y. Yang, Phys. Rev. Lett. 112, 197201 (2014).
33 P. Laczkowski, J.-C. Rojas-S´anchez, W. Savero-Torres, H.
Jaffr`es, N. Reyren, C. Deranlot, L. Notin, C. Beign`e, A.
Marty, J.-P. Attan`e, L. Vila, J.-M. George, and A. Fert,
Appl. Phys. Lett. 104, 142403 (2014).
34 J.-C. Lee, L.-W. Huang, D.-S. Hung, T.-H. Chiang, J. C.
A. Huang, J.-Z. Liang, and S.-F. Lee, Appl. Phys. Lett.
104, 052401 (2014).
35 M. C. Prestgard and A. Tiwari, Appl. Phys. Lett. 104,
122402 (2014).
36 M. C. Prestgard, Z. Yue, M. E. Raikh and A. Tiwari, in
preparation.
37 M. C. Prestgard, Ph.D thesis, University of Utah, 2015.
|
1806.04486 | 1 | 1806 | 2018-06-12T13:12:08 | Anomalously low dielectric constant of confined water | [
"cond-mat.mes-hall",
"cond-mat.soft",
"physics.chem-ph"
] | The dielectric constant of interfacial water has been predicted to be smaller than that of bulk water (= 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically-flat walls separated by various distances down to 1 nm. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane dielectric constant is only approximately 2. The electrically dead layer is found to be two to three molecules thick. These results provide much needed feedback for theories describing water-mediated surface interactions and behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement. | cond-mat.mes-hall | cond-mat | Anomalously low dielectric constant of confined water
L. Fumagalli1,2*, A. Esfandiar3, R. Fabregas4,5, S. Hu1,2, P. Ares1,2, A. Janardanan1,2, Q. Yang1,2, B. Radha1,2, T. Taniguchi6,
K. Watanabe6, G. Gomila4,5, K. S. Novoselov1,2, A. K. Geim1,2*
1 School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, UK.
2 National Graphene Institute, University of Manchester, Manchester M13 9PL, UK.
3 Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran, Iran.
4 Departament d'Electrònica, Universitat de Barcelona, C/ Martí i Franquès 1, 08028 Barcelona, Spain.
5 Institut de Bioenginyeria de Catalunya, C/ Baldiri i Reixac 15-21, 08028 Barcelona, Spain.
6 National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
* Email: laura.fumagalli@manchester.ac.uk; geim@manchester.ac.uk
is
lacking. We report
for water confined between
The dielectric constant ε ε ε ε of interfacial water has been
predicted to be smaller than that of bulk water (ε ε ε ε ≈≈≈≈ 80)
because the rotational freedom of water dipoles is
expected to decrease near surfaces, yet experimental
evidence
local capacitance
measurements
two
atomically-flat walls separated by various distances
down to 1 nm. Our experiments reveal the presence of
an interfacial layer with vanishingly small polarization
such that its out-of-plane εεεε is only ~ 2. The electrically
dead layer is found to be two to three molecules thick.
These results provide much needed feedback for
theories describing water-mediated surface interactions
and behavior of interfacial water, and show a way to
investigate the dielectric properties of other fluids and
solids under extreme confinement.
ion solvation, molecular
Electric polarizability of interfacial water determines
the strength of water-mediated intermolecular forces, which
in turn impacts a variety of phenomena including surface
hydration,
transport through
reactions and macromolecular
nanopores, chemical
assembly, to name but a few1-3
. The dielectric properties of
interfacial water have therefore attracted intense interest for
many decades4-7 and, yet, no clear understanding has been
reached8-11. Theoretical12-14 and experimental studies15-17
have shown that water exhibits layered structuring near
surfaces, suggesting that it may form ordered (ice-like)
phases under ambient conditions. Such ordered water is
generally expected to exhibit small polarizability because
of surface-induced alignment of water molecular dipoles
which are then difficult to reorient by applying an electric
field7-10
. Despite a massive amount of literature dedicated
to the subject (see, for example, refs 4-11), the dielectric
its depth remain
constant of
essentially
are
challenging.
interfacial water and
unknown
because measurements
The previous experiments to assess ε of interfacial
water mostly relied on broadband dielectric spectroscopy
applied to large-scale naturally-occurring systems such as
nanoporous
and
dispersions4,5,10,18,19. These systems allow sufficient amount
powders
crystals,
zeolite
in
interfacial water
for carrying out capacitance
of
measurements but the involved complex geometries require
adjustable parameters and extensive modelling, which
result
large and poorly controlled experimental
uncertainties. For example, the extracted values of ε are
strongly dependent on assumptions about the interfacial
layer thickness. For the lack of direct probes to measure the
polarizability of interfacial water, most evidence has come
so far from molecular dynamics (MD) simulations, which
also involve certain assumptions. These studies generally
predict that the polarizability should be reduced by
approximately an order of magnitude7-9 but the quantitative
accuracy of these predictions is unclear because the same
simulation approach struggles to reproduce the known ε for
bulk water phases20. In this work, we used slit-like channels
of various heights h which could be controllably filled with
water. The channels were incorporated into a capacitance
circuit with exceptionally high sensitivity to local changes
in dielectric properties, which allowed us to determine the
out-of-plane dielectric constant ε⊥ of the water confined
inside.
The studied devices were fabricated by van der Waals
assembly21 using three atomically flat crystals of graphite
and hexagonal boron nitride (hBN) following a recipe
reported previously22,23 (see Supplementary Method S1 and
Fig. S1). Here graphite serves as a bottom layer for the
assembly as well as the ground electrode in capacitance
measurements (Fig. 1a). Next a spacer layer was placed on
top of graphite. It was an hBN crystal patterned into
parallel stripes. The assembly was completed by placing
another hBN crystal on top (Figs 1b,c). The spacer
determined the channels' height h, and the other two
crystals served as top and bottom walls. The reported
channels were usually ∼ 200 nm wide and several
micrometers long. Each of our devices for a given h
contained several channels in parallel (Fig. 1), which
ensured high reproducibility of our measurements and
reduced statistical errors. When required, the channels
could be filled with water through a micrometer-size inlet
etched in graphite from the back22,23
(Fig. 1a).
1
Fig. 1 Experimental setup for dielectric imaging. a Its schematic. The top layer and side walls made of hBN are shown in blue;
graphite serving as the ground electrode is in black. The three-layer assembly covers an opening in a silicon nitride membrane (light
brown). The channels are filled with water from the back. The AFM tip, kept always in a dry nitrogen atmosphere, served as the top
electrode. b,c Cross-sectional schematics before (b) and after (c) filling the channels with water (not to scale). d Three-dimensional
topography image of one of the devices. e-g AFM topography of the sagged top hBN for devices with different h before filling them with
water. Scale bars: 500 nm. h-j Topography profiles for the top layer (black) and the part not covered by hBN (cyan) as indicated by color-
coded lines in (d). Red curves: Same devices after filling with water.
To probe ε of water inside the channels, we employed
scanning dielectric microscopy based on electrostatic force
detection with an atomic force microscope (AFM),
adapting the approach described in ref. 24. Briefly, by
applying a low-frequency ac voltage between the AFM tip
and the bottom electrode, we could detect the tip-substrate
electrostatic force, which translates into the first derivative
of the local capacitance dC/dz in the out-of-plane direction
z. By raster-scanning the tip, a dC/dz (or "dielectric") image
was acquired, from which local dielectric properties could
be reconstructed (see Supplementary Methods S3 and S4).
Note
these
measurements. First, hBN is highly insulating, which
allows the electric field generated by the AFM tip to reach
the subsurface water without being screened. It is also
highly beneficial to have hBN as the side walls (spacers)
because this provides a simple reference for comparison
between the dielectric properties of hBN (ε⊥ ≈ 3.5)25 and
the nearby water of the same thickness (Fig. 1c). As shown
below, the latter arrangement yielded a clear dielectric
contrast proving that the dielectric constant of confined
water strongly changes with decreasing h, independently of
the modelling.
the use of hBN
that
is essential for
Unlike the previous reports22,23, we chose to use
relatively thin (30-80 nm) top crystals. This not only
allowed us to reach closer to the subsurface water but also
to control that the channels were fully filled during the
capacitance measurements (see below) (Supplementary
Method S2 and Fig. S2). If there was no water inside, the
top hBN exhibited notable sagging22 as illustrated in Fig.
1b. Figures 1e-g show AFM topographic images for
representative devices with h ≈ 10, 3.8 and 1.4 nm under
dry conditions. All of them exhibit some sagging, and its
extent depends on thickness of the top hBN22 (black curves
in Figs 1h-j). The channel heights h could also be
determined from the same images using the areas that were
not covered by the top hBN layer (cyan curves). Such
initial imaging as well as dielectric imaging after filling the
channels was carried out at room temperature and the
whole AFM chamber was filled with dry nitrogen.
Figures 2a-c show AFM topographic images for the
same three devices and the same scan areas as in Figs 1e-g
but after filling the channels with water, which was done by
exposing the backside of our devices to deionized water22
(Fig. 1a). As the channels became filled through the inlet in
the bottom graphite, this lessened adhesion between the
side and
the sagging
top walls and, consequently,
2
Fig. 2 Dielectric imaging of confined water. a-c Topographic images of the three devices in Fig. 1 after filling them with water. Scale
bars: 500 nm. d-f Corresponding dC/dz. The shown images were obtained by applying a tip voltage of 4 V at 1 kHz (other voltages and
frequencies down to 300 Hz yielded similar images). Commercial cantilevers with tips of 100-200 nm in radius were used to maximize
the imaging sensitivity. g Averaged dielectric profiles across the channels in (d-f). h Simulated dC/dz curves as a function of ε⊥ for the
known geometries of the three shown devices (Shown are the peak values in the middle of the channels). Symbols are the measured
values of dC/dz from (g). Their positions along the x-axis are adjusted to match the calculated curves. Bars and light-shaded regions:
Standard errors as defined in Supplementary Information.
diminished (Fig. 1c). The top hBN covering water-filled
channels became practically straight with little topographic
contrast left, independently of h (red curves in Figs 1h-j).
The corresponding dielectric images for the discussed
devices after their filling are shown in Figs 2d-f. One can
see very strong contrast which moreover reverses with h.
For the case of the 10 nm-channels, the red regions
containing subsurface water indicate ε⊥ larger than that of
hBN, as expected (Figs 2d and 2g, red). On the contrary,
for
the dielectric contrast
practically disappeared (Figs 2e and 2g, cyan) whereas the
1.4 nm-thick water exhibited the opposite, negative contrast
(Figs 2f and 2g, blue). The images show that the
polarizability of confined water strongly depends on its
thickness h and can reach values smaller than that of hBN
with its already modest ε⊥ ≈ 3.5. As mentioned above, a
reduction in ε⊥ for strongly confined water is generally
expected on the basis of atomistic simulations7-9 but the
observed decrease is much stronger than predicted (ε⊥ ≈ 10)
or commonly assumed in the literature.
Figure 2h shows the resulting curves for the discussed three
devices in Figs 2a-c. By projecting the measured capacitive
signals (symbols on the y-axis of Fig. 2h) onto the x-axis,
we find ε⊥ ≈ 15.5, 4.4 and 2.3 for h ≈ 10, 3.8 and 1.4 nm,
respectively. We emphasize that ε⊥ is the only unknown in
our model as all the other parameters were determined
experimentally. Also, note that some devices exhibited
small (few Å) residual sagging in the filled state (see, e.g.,
Figs 2a,c). If not taken into account, this effect can lead to
systematic albeit small errors in determining ε⊥ (by
effectively shifting the calculated curves in the y-direction).
Our calculations included this residual sagging, too (Fig.
S5).
the 3.8 nm-thick water,
We repeated such experiments and their analysis for
more than 40 devices with h ranging from ∼ 1 to 300 nm.
The results are summarized in Fig. 3 which shows the
found ε⊥ as a function of h. The bulk behavior (ε⊥ ≈ 80)
recovers only for water as thick as ∼ 100 nm, showing that
the confinement can affect the dielectric properties of even
relatively
layers (Fig. S6). At smaller
thicknesses, ε⊥ evolves approximately linearly with h and
approaches a limiting value of ∼ 2.1 ± 0.2 at h < 2 nm
where only a few layers of water can fit inside the channels.
Note
is
independent of varying details of our experimental
geometries such as, e.g., thickness of the top hBN layer and
the AFM tip radius (Fig. S7).
the functional dependence
thick water
To quantify the measured local capacitance and find ε⊥
for different water thicknesses, we use a three-dimensional
electrostatic model that takes into account the specific
geometry of the measured devices as well as of the used
AFM tips (see Supplementary Method S5 and Figs S3, S4).
The model allows numerical calculation of dC/dz as a
function of ε⊥ for a dielectric material inside the channels.
that
in Fig. 3
3
Although the found ε⊥ remains anomalously small (<
20) over a wide range of h up to 20 nm (Fig. 3), this does
not actually mean that the polarization suppression extends
over the entire volume of the confined water. Indeed, the
capacitance response comes from both interfacial and inner
molecules, effectively averaging their contributions over
the channel thickness. To this end, we recall that water near
solid surfaces is believed to have a pronounced layered
structure which extends approximately 10 Å into the bulk12-
17. Accordingly, the found dependence ε⊥(h) can be
attributed to a cumulative effect from the thin near-surface
layer with the low dielectric constant εi whereas the rest of
the water has the normal, bulk polarizability, εbulk ≈ 80. The
overall effect can be described by three capacitors in series
as shown in the inset of Fig. 3. This model yields the
effective ε⊥ = h/[2hi /εi + (h - 2hi)/εbulk] where hi is the
thickness of the near-surface layer. Its εi can be taken as ≈
2.1 in the limit of small h if we assume that the layered
13)
structure does not change much with increasing h (ref.
and is similar at both graphite and hBN surfaces, as the MD
simulations predict14. Figure 3 shows that the proposed
simple model describes well
the experimental data,
allowing an estimate for the thickness hi of interfacial water
with
the suppressed polarization (see Supplementary
Method S9 and Fig. S8). Within the experimental error, our
data yield hi ≈ 7.5 ± 1.5 Å, in agreement with the expected
layered structure of water14-17. In other words,
the
electrically dead
two-three molecular
diameters away from the surface. This is also consistent
with the thickness h = 1.5-2 nm – the double of hi – where
the limiting value ε⊥ ≈ 2.1 is reached (see Fig. 3), which can
be understood as the distance at which the near-surface
layers originating from top and bottom walls begin to
merge.
layer extends
To conclude, we have succeeded in the long-lasting
quest to measure the dielectric constant of confined water at
the nanoscale. Our results are
important for better
understanding of long-range interactions in biological
systems, including those responsible for the stability of
macromolecules such as DNA and proteins, and of the
electric double
in
electrochemistry, energy storage, etc. The results can also
be used to fine tune parameters in future atomistic
simulations of confined water.
that plays a critical role
layer
References
1
Israelachvili, J. N. Intermolecular and surface forces (Academic Press,
2011).
2 Leikin, S., Parsegian, V. A., Rau, D. C. & Rand, R. P. Hydration
forces. Annu. Rev. Phys. Chem. 44, 369-395 (1993).
3 Honig, B. & Nicholls, A. Classical electrostatics in biology and
chemistry. Science 268, 1144-1148 (1995).
4 Stern, O. Zur theorie der elektrolytischen doppelschicht. Elektrochem.
Angew. Phys. Chem. 30, 508-516 (1924).
5 Conway, B. E., Bockrais, J. O'M. & Ammar, I. A. The dielectric
constant of the solution in the diffuse and Helmholtz double layers at a
4
Fig. 3 Dielectric constant of water under strong confinement.
Symbols: ε⊥ for water channels with different h. The y-axis error
is the uncertainty in ε⊥ that follows from the analysis such as in
Fig. 2h. The x-error bars show the uncertainty in the water
thickness including the residual sagging. Red curves: Calculated
ε⊥(h) behavior for the model sketched in the inset. It assumes the
presence of near-surface layer with εi = 2.1 and thickness hi
whereas the rest of the channel contains the ordinary bulk water.
Solid curve: Best fit yielding hi = 7.4 Å. The dotted, dashed and
dashed-dotted curves are for hi = 3, 6 and 9 Å, respectively.
Horizontal lines: Dielectric constants of bulk water (solid) and
hBN (dashed). The dielectric constant of water at optical
frequencies (square of its refractive index) is shown by the dotted
line.
The dielectric constant ε⊥ ≈ 2.1 measured for few-layer
water is exceptionally small. Not only it is much smaller
than that of bulk water (ε ≈ 80) and proton-disordered ice
phases such as ordinary ice Ih (ε ≈ 99)26,27 but the value is
also smaller than that in low-temperature proton-ordered
ices (ε ≈ 3-4)27. Moreover, the found ε⊥ is small even in
comparison with the high-frequency dielectric constant ε∞
due to dipolar relaxation (ε∞ ≈ 4-6 for liquid water28,29 and
ε∞ ≈ 3.2 for ice Ιh26,27). Nonetheless, ε⊥ ≈ 2.1 lies – as it
should – above ε ≈ 1.8 for water at optical frequencies26,29,
which is the contribution due to the electronic polarization.
The above comparison implies that the dipole rotational
contribution is completely suppressed, at least in the
direction perpendicular to the atomic planes of the
confining channels. This agrees with the MD simulations
that find water dipoles to be oriented preferentially parallel
to moderately hydrophobic surfaces such as hBN and
graphite12-14. The small ε⊥ also suggests that the hydrogen-
bond contribution which accounts for the unusually large ε∞
≈ 4-6 in bulk water28,29 is suppressed, too. The remaining
polarizability can be attributed mostly to the electronic
contribution
the
confinement) plus a small contribution from atomic
dipoles, similar to the case of non-associated liquids29.
change under
(not
expected
to
charged interface in aqueous solution. Trans. Faraday Soc. 47, 756-
766 (1951).
6 Hubbard, J. B. & Onsager, L. J. Dielectric dispersion and dielectric
friction in electrolyte solutions. I. J. Chem. Phys. 67, 4850-4857
(1977).
7 Chandra, A. Static dielectric constant of aqueous electrolyte solutions:
Is there any dynamic contribution? J. Chem. Phys. 113, 903-305
(2000).
8 Zhang, C., Gygi, F. & Galli, G. Strongly anisotropic dielectric
relaxation of water at the nanoscale. J. Phys. Chem. Lett. 4, 2477-2481
(2013).
9 Schlaich, A., Knapp, E. W. & Netz, R. R. Water dielectric effects in
planar confinement. Phys. Rev. Lett. 117, 048001 (2016).
10 Ben-Yaakov, D., Andelman, D. & Podgornik, R. Dielectric decrement
as a source of ion-specific effects. J. Chem. Phys. 134, 074705 (2011).
11 Bonthuis, D. J. & Nets, R. R. Unraveling the combined effects of
dielectric and viscosity profiles on surface capacitance, electro-osmotic
mobility, and electric surface conductivity. Langmuir 28, 16049-16059
(2012).
12 Lee, C. Y., McCammon, J. A. & Rossky, P. J. The structure of liquid
water at an extended hydrophobic surface. J. Chem. Phys. 80, 4448-
4455 (1984).
13 Cicero, G., Grossman, J. C., Schwegler, E., Gygi, & F., Galli, G. Water
confined in nanotubes and between graphene sheets: A first principle
study. J. Am. Chem. Soc. 130, 1871-1878 (2008).
14 Tocci, G., Joly, L. & Michaelides, A. Friction of water on graphene
and hexagonal boron nitride from ab initio methods: very different
slippage despite very similar interface structures. Nano Lett. 14, 6872-
6877 (2014).
15 Israelachvili, J. N. & Pashley, R. M. Molecular layering of water at
surfaces and origin of repulsive hydration forces. Nature 306, 249-250
(1983).
16 Toney, M. F., Howard, J. N., Richer, J., Borges, G. L., Gordon, J. G. et
al. Voltage-dependent ordering of water molecules at an electrode–
electrolyte interface. Nature 368, 444-446 (1994).
17 Velasco-Velez, J-J., Wu, C. H., Pascal, T. A. , Wan, L. F., Guo, J. et al.
The structure of interfacial water on gold electrodes studied by x-ray
absorption spectroscopy. Science 346, 831-834 (2014).
18 Cui, H-B., Takahashi, K., Okano, Y., Kobayashi, H., Wang, Z. et al.
Dielectric properties of porous molecular crystals that contain polar
molecules. Angew. Chem. Int. Ed. 44, 6508-6512 (2005).
19 Haidar, A. R. & Jonscher, A. K. The dielectric properties of zeolites in
variable temperature and humidity. J. Chem. Soc., Faraday Trans. 1,
82, 3535-3551 (1986).
20 Aragones, J. L., MacDowell, L. G. & Vega, C. Dielectric constant of
ices and water: a lesson about water interactions. J. Phys. Chem. A,
115, 5745-5758 (2011).
21 Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures.
Nature 499, 419-425 (2013).
22 Radha, B., Esfandiar, A., Wang, F. C., Rooney, A. P., Gopinadhan, K.
et al. Molecular transport through capillaries made with atomic-scale
precision. Nature 538, 222-225 (2016).
23 Esfandiar, A., Radha, B., Wang, F. C., Yang, Q., Hu, S. et al. Size
effect in ion transport through angstrom-scale slits. Science 358, 511-
513 (2017).
24 Fumagalli, L., Esteban-Ferrer, D., Cuervo, A., Carrascosa, J. L. &
Gomila, G. Label-free identification of single dielectric nanoparticles
and viruses with ultraweak polarization forces. Nat. Mater. 11, 808-
816 (2012).
25 Kim, K. K., Hsu, A., Jia, X., Kim, S. M., Shi, Y. et al. Synthesis and
characterization of hexagonal boron nitride film as a dielectric layer for
graphene devices. ACS Nano 6, 8583-8590 (2012).
26 Petrenko, V. F. & Whitworth, R. W. Physics of Ice (Oxford University
Press, 1999).
27 Johari, G. P. The spectrum of ice. Contemp. Phys. 22, 613-642 (1981).
28 Hill, N. E. Interpretation of the dielectric properties of water. Trans.
Faraday Soc. 59, 344-346 (1963).
29 Hill, N. E., Vaughan, W. E., Price, A. H. & Davies, M. Dielectric
properties and molecular behaviour (Van Nostrand Reinhold
Company Ltd, London, 1969).
5
Supplementary Information
S1. Device fabrication
We made our devices following fabrication procedures similar to those reported in refs 22,23
. In
brief, a free-standing SiN membrane (500 nm in thickness) was made from a commercial Si/SiN wafer
and used as a substrate for the van der Waals assembly (see Fig. S1; purple). A rectangular aperture of
≈ 3×25 µm2 in size was then etched in the membrane (Fig. S1). This aperture served later as an inlet to
fill the nanochannels with water from a reservoir connected to the back of the wafer (Fig. 1a of the
main text). Next, we transferred a large cleaved graphite crystal (thickness of ∼ 10-50 nm) to seal the
aperture. Separately, an hBN crystal referred to as spacer was prepared on another substrate and
patterned into parallel stripes using e-beam lithography and reactive ion etching. The hBN spacer had
thickness h chosen in the range of ∼ 1-300 nm. The stripes were spaced apart by ∼ 200 nm and had
widths of 0.5-1.5 µm. The spacer stripes were then transferred onto the bottom graphite and aligned
perpendicular to the long-axis of the aperture in the SiN membrane (Fig. S1b). As the next step,
reactive ion etching was used again from the back of the Si/SiN wafer to project the aperture onto the
hBN-on-graphite assembly. The second hBN crystal referred to as top-hBN was prepared with a
thickness of 30-80 nm and transferred on top of the assembly. As a result, we obtained an array of
channels with the height h and width ∼ 200 nm. The top hBN crystal sealed the etched opening so that
the only path from the back side of the SiN membrane to its top was through the resulting
nanochannels. After each transfer, we annealed our assembly in Ar/H2 at 400°C for 3 hours to remove
any polymer residue and other contamination. Finally, we made an electrical contact to the bottom
graphite using photolithography and e-beam evaporation of Au. Optical images of a representative
device with the channel height h ≈ 4 nm are shown in Fig. S1.
Fig. S1 Devices for local dielectric imaging of confined water. a Optical micrograph of one of our devices. The top hBN
layer is ∼ 45 nm thick and h ≈ 4 nm. The free-standing SiN membrane appears in purple; the Si/SiN wafer in green. The
graphite layer is contacted with gold pads to serve as the ground electrode. Scale bar: 10 µm. b Zoom into the central region
of (a). The areas with nanochannels are shown by the two dashed rectangles. Regions with the hBN spacers not covered by
the top hBN and used to measure h are outlined by black dashes.
6
S2. Filling nanochannels with water
It was essential to verify that there was water inside nanochannels probed by our scanning probe
approach. In particular, we needed to ensure that individual channels under investigation were neither
empty nor contained another material because in principle they could be, for example, blocked by
contamination or filled with a polymer residue. Global measurements such as those reported
previously22,23, in which a water flow through hundreds of channels was detected, were insufficient for
the purpose of our study. Note that we could see the water inside individual channels with h > 100 nm
using optical microscopy but water was invisible for h < 20 nm as illustrated by Fig. S2. Here one can
clearly see that water filled all the large channels connected to the water inlet, except for one that is
probably blocked by contamination (see Fig. S2a). On the contrary, Fig. S2b shows that the optical
contrast was insufficient to detect water inside channels with small h or actually even see such small
channels.
To verify the presence of water in the latter case, we adopted the following strategy. The thickness
of the top hBN layer was chosen deliberately in the range of typically 30 to 50 nm, which allowed the
hBN cover to sag inside the channels if they were empty (in dry air) as sketched in Fig. 1b of the main
text. Upon filling them with water from the backside inlet, the top layer straightened (Fig. 1c of the
main text). Accordingly, by monitoring topographic changes in the top hBN position before and after
(see Figs 1e-g and Figs 2a-c, respectively), we could ensure that individual channels under
investigation were first empty and then filled with water for their dielectric imaging. Importantly,
topographic and dielectric AFM images could be acquired one after another without perturbing the
experimental setup. Note that if the top hBN sagged completely and touched the bottom graphite or if
the channels were blocked by contamination, no straightening of the top hBN occurred. Such channels
were obviously excluded from our investigation. This monitoring procedure was working well even for
devices with h < 2 nm, which required Å-scale topographical imaging to detect sagging and
straightening (Fig. 1j of the main text). For such channels, we typically used a slightly thicker top hBN
(50 to 80 nm) to avoid its excessive sagging.
We studied more than 40 devices in which the top layer was partially sagged as required for
monitoring of the water filling. Our success rate was roughly 50% with the rest of the devices being
blocked, most probably because of sagging of a very thin (few nm) part of the top hBN, which could be
often found near cleaved edges23. For unblocked channels that allowed water inside, our dielectric
Fig. S2 Optical images of our devices after filling them with water. a Thick device (h ≈ 242 nm). Channels with water
appear darker than the empty channels that are seen to the right of the image and not connected to the inlet (grey rectangle).
b Thin (h ≈ 3 nm) device filled with water. Individual channels cannot be resolved on the micrograph. Scale bars: 10 µm.
7
measurements discussed below were highly reproducible. Note that both topographical and dielectric
measurements were always carried out at very low (few %) humidity because the water reservoir
attached to the back side of the Si/SiN was completely isolated from the AFM chamber whereas a
water flux through the channels themselves was so small22 that it could not possibly change the
humidity even locally.
S3. Local dielectric imaging
Dielectric images of the water-filled channels were obtained by a scanning probe technique24 here
referred to as scanning dielectric microscopy. It is based on local electrostatic force detection30,31
by
using an atomic force microscope. Images were taken at room temperature and in a dry atmosphere
(relative humidity of few %) using a commercial AFM (Nanotec Electronica). After locating a region
of interest and taking its topographic image, we scanned the AFM tip at the constant height zscan from
the top hBN surface. The dielectric images were acquired at 1 sec per line with an applied ac voltage of
typically Vac = 4 V and the frequency ν = 1,000 Hz, unless stated otherwise. We recorded mechanical
oscillations of the AFM cantilever induced by the electrostatic force between the tip and the surface at
the double frequency (2ν) using a lock-in amplifier. The first derivative of the tip-substrate capacitance
2 where D2ν is the cantilever
dC/dz in the out-of-plane direction z is given by dC/dz = D2ν (z)·4k/vac
oscillation amplitude at 2ν, and k the spring constant of the cantilever. The expression is valid for
frequencies well below the resonance frequency of the cantilever. Images obtained in this mode depend
only on the dielectric properties of probed devices, their geometry and the AFM tip geometry. We
determined the scan height zscan by recording the tip deflection in the dc mode, and the dC/dz signal was
also recorded as a function of the tip-surface distance at image edges, as previously reported24. While
the deflection-distance curve allowed us to determine zscan, we used the dC/dz signal to detect any
vertical drift and corrected zscan for it. Typically, zscan was larger than 15 nm to avoid short-range
interactions. Note that this approach is different from scanning polarization force microscopy32 in that
the measured force variations at 2ν are not used as a feedback signal in our case. Instead, we turn off
the feedback, retract the tip at height zscan from the surface and scan it in a straight line, which
minimizes stray capacitance variations and simplifies data analysis. A representative example of
dielectric imaging is shown in Fig. S6 for a device with large channels, in which the bulk-water
dielectric behavior was recorded.
Before and after taking the dielectric image, we also took dC/dz-approach curves over distances of
0-600 nm from the substrate. These curves were used to calibrate the AFM tip geometry in situ (see
Fig. S7 and refs 24,33-36). The approach curves were taken directly above top hBN near the scanned area,
after verifying that we recovered the same geometrical parameters as measured above the bottom
graphite and gold contacts. We used commercial doped-diamond coated probes (CDT-CONTR,
Nanosensors) with spring constants in the range 0.3 - 1.0 N/m, nominal radii of 100 to 200 nm and the
cone half-angle of ∼ 30º.
S4. Dielectric image analysis
37 software and custom-
All topographic, dielectric and other AFM data were analyzed using WSxM
made Matlab and Mathcad routines. To extract the dielectric constant of water, we analyzed changes in
dC/dz over filled channels as compared to the derivative measured over hBN spacer regions, that is, not
the absolute value of dC/dz. For brevity, we below redefine dC/dz as dC/dz = dC(zscan, ε⊥)/dz –
dC(zscan, εhΒΝ)/dz, where εhBN is the out-of-plane dielectric constant of hBN ~ 3.5 (ref. 25). We then
compared the dC/dz detected over the center of the nanochannel (peak value) with the calculated value
8
using our numerical model discussed in the next chapter. ε⊥ was the only fitting parameter to match the
experimental and numerical data. All the necessary geometrical parameters of our samples were
experimentally determined using AFM and scanning electron microscopy. We found the geometric
parameters of our AFM probes in situ by fitting the experimental dC/dz approach curves with their
numerical model as described previously24,33-36. This allowed us to obtain the effective tip radius R and
the cone half-angle θ , which are responsible24,36 of the local electrostatic interaction, with a high
accuracy of ± 3 nm and ± 0.25º, respectively. The spring constants of our cantilevers were given by the
manufacturer but we verified that the use of probes with different spring constants did not affect the
extracted dielectric constants, in agreement with the result of ref. 24 (see supplementary information
therein).
Some dielectric constants ε⊥ that were found experimentally and are summarized in Fig. 3 of the
main text have asymmetric error bars. This is a result of the logarithmic-like dependence of the tip-
surface capacitance on ε⊥ (see the simulated curves in Fig. 2h and Fig. S4e). The feature is typical for
local dielectric measurements (see, e.g., ref. 24) and caused by the use of a sharp tip as the top electrode
instead of a planar electrode. The logarithmic dependence is also responsible here for the higher
sensitivity of our technique to negative capacitive variations in dC/dz (ε⊥ ≤ 3.5) as compared to large
positive changes (ε⊥ > 10), as it can be seen in Figs S4b,d,e. This explains why the error bars in Fig. 3
of the main text are large for thick water (h > 10 nm), despite the dC/dz signal is large in this case.
The experimental parameters used in the calculations for the three devices of Figs 1-2 of the main
text are the following. Sample dimensions in Fig. 1e and Figs 2a,d: h = 10 nm, top hBN layer thickness
H = 51 nm, channel width w = 200 nm, hBN spacer width ws = 800 nm. For Fig. 1f and Figs 2b,e: h =
3.8 nm, H = 46 nm, w = 170 nm, ws = 800 nm. For Fig. 1g and Figs 2c,f: h = 1.4 nm, H = 39 nm, w =
200 nm, ws = 800 nm. The dielectric images in Figs 2d-f (h = 10, 3.8 and 1.4 nm) were measured at
scan heights zscan = 30, 25 and 17 nm and with tip radii R = 165, 137 and 101 nm (half-angle θ = 29.0,
31.5 and 30.5º), respectively. Note that the observed suppression in ε⊥ is independent of the scan height
and the tip radius. We carefully verified this by taking dielectric images at different scan heights (not
shown here but see ref. 24) and with different AFM probes (see Fig. S7). Only the capacitive contrast
(dC/dz) changes with zscan and R, increasing for smaller scan heights and larger radii24.
S5. Finite-element numerical simulations
Three-dimensional finite-element numerical calculations were implemented using COMSOL
Multiphysics 5.2a (AC/DC electrostatic module) linked to Matlab. The AFM probe was modelled as a
truncated cone with half-angle θ and height Hcone terminated with a tangent hemispherical apex of
radius R as shown in Fig. S3a. To reduce computational time, the cone height was reduced to 6 µm
(half its nominal value) and the cantilever was modeled as a disk of height Hcantilever = 3 µm and zero
length Lcantilever, thus omitting the cantilever length. We have checked that these approximations have
no impact on the extracted dielectric constants for the geometry analyzed here36,38
. We simulated the
probed heterostructure as three buried nanochannels (Fig. S3a). They were modeled as rectangular
parallelepipeds of length l = 2.5 µm, height h, width w, spacing ws (found experimentally as discussed
above) and the out-of-plane dielectric constant ε⊥. The water channels were surrounded from above by
a dielectric matrix with εhΒΝ = 3.5 of a rectangular shape (length l = 2.5 µm, width W and height H + h).
Note that, for our thickest channels (h > 100 nm), we modeled them with trapezoidal rather rectangular
cross-sections in order to take into account the ∼ 55º angle of the lateral walls, which appeared during
etching of thick hBN spacer crystals by reactive ion plasma.
9
For each device, we numerically solved the Poisson's equation for the specific dimensions of the
device and the probe with the nanochannel dielectric constant ε⊥ as the only varying parameter. We
calculated the electrostatic force acting on the probe and, therefore, the capacitance first-derivative
dC/dz as a function of ε⊥ by integrating the built-in Maxwell stress tensor on the probe surface. To
avoid size effects related to the simulation box, we used a cylindrical box with infinite lateral extension
at the top and lateral boundaries by using the built-in infinite-element transformation. The boundary
conditions were set as follows: applied voltage of 1 V at the tip surface; zero voltage at the bottom
electrode; zero charge at the top and side boundaries. We validated these simulations against analytical
formulas for thin films as previously reported34,38
. Optimization and numerical noise reduction were
carried out to meet the accuracy required here. Note that our simulations involved 3D structures with
sizes spanning over more than three orders of magnitude - from the micrometer-sized matrix and probe
down to the atomically-thin channels. To this end, a mesh of ~ 106 elements was typically required. An
example of the electrostatic potential generated around a representative device is shown in Fig. S3b.
Furthermore, we implemented Matlab routines to simulate the tip scanning at a constant height zscan
from the top hBN surface as in the experiments. This allowed us to compute dielectric images
dC(x,y)/dz where (x,y) is the in-plane tip position. Examples of the calculated images and
corresponding profiles along the x-axis are plotted in Fig. S4 for representative devices with ε⊥ = 2 and
80. In addition, we also computed fixed-position "spectroscopic" curves, in which the tip was held
fixed over the center of a channel and dC/dz was calculated as a function of ε⊥ with respect to the value
computed over the center of the hBN spacer. We used such spectroscopic curves to fit our experimental
data and obtain ε⊥, as shown in Fig. 2h using the real data and in Fig. S4e for simulated ones.
Fig. S3 Numerical simulations. a Simplified schematics of our 3D model, including the AFM tip and three nanochannels
(not to scale). b Example of calculated potential distributions. For clarity, only the potential distribution inside the device is
shown. In this case, we used H = 40 nm, h = 10 nm, w = 150 nm, ws = 800 nm; W = 3 µm; εhΒΝ = 3.5 and ε⊥ = 2. AFM tip:
R = 100 nm, θ = 25º, Hcone = 6 µm, Hcantilever = 3 µm, Lcantilever = 0 µm, zscan = 20 nm.
10
Fig. S4 Simulated dielectric images. a,c Dielectric constant ε⊥ = 2 for (a) and ε⊥ = 80 for (c). Scan height zscan = 20 nm
from the top hBN. b,d Corresponding profiles for three heights zscan = 15, 20 and 25 nm. Relative dC/dz are shown, taken
with respect to their values over the hBN spacer. Used parameters: h = 3 nm, H = 40 nm, w = 150 nm, ws = 800 nm, R =
100 nm, θ = 30º. e Simulated dC/dz as functions of ε⊥ with the tip fixed at the channel center. Symbols indicate ε⊥ = 2 and
80 for parameters as in (b) and (d). Note that such "spectroscopic" curves show the contrast inversion at ε⊥ = εhBN = 3.5 as
well as decrease in sensitivity with increasing zscan, as expected.
S6. Subsurface sensitivity
The ability of electrical scanning probe techniques such as electrostatic force microscopy (EFM),
Kelvin probe force microscopy (KPFM) and scanning microwave microscopy (SMM) to obtain
subsurface images on the nanoscale is widely acknowledged (see, for example, refs 39-42). By exploiting
the long-range nature of the electrostatic interaction between the tip and a conductive substrate, these
techniques are able to detect nanoscale objects buried inside a dielectric matrix. In particular, non-
destructive visualization of conductive objects such as carbon nanotubes embedded in dielectrics of
hundreds of nm in thickness has previously been reported using EFM39,40
and KPFM41. Our work uses
a similar approach based on electrostatic-force detection, which allows detection of water as thin as 1
nm buried ∼ 100 nm below. The subsurface sensitivity in our case depends on several parameters. It
obviously decreases with the thickness H of the top hBN layer and the scan height. Also, the sensitivity
increases with the width and the height of the nanochannels and the AFM tip radius. Accordingly, we
used AFM tips with large radii (100-200 nm) rather than probes with small few-nm radii as in ref. 24.
This was intentional to enhance our sensitivity and reach to the water below our relatively thick (40-80
nm) top hBN. The latter thickness was required to avoid the collapse of our nanochannels (see above).
Wider channels with w > 200 nm would increase sensitivity but, unfortunately, were also nonviable
because of the same collapse22.
11
S7. Effect of residual sagging
After filling water inside the studied nanochannels, they often exhibited small residual sagging (≤ 3
Å) for h < 20 nm, where our thick channel devices (h > 100 nm) usually swelled slightly (by 1-2 nm).
We verified that these topographic features had no major impact on our results. Moreover, to achieve
highest possible accuracy in our experiments, we corrected our numerical modelling by including this
residual sagging/swelling for each individual device. The simulation setup is sketched in the inset of
Fig. S5a. As an example, Fig. S5a shows the simulated profiles with and without residual sagging by 3
Å for the device of h = 1.4 nm and ε⊥ = 2 of Fig. 2 of the main text. In either case the resulting dC/dz
variation remains clearly negative, and the profile is slightly higher if the sagging is not included in the
model (open symbols). Accordingly, Fig. S5b shows the simulated "spectroscopic" curves used to
extract the water's dielectric constant for all three devices of Fig. 2 of the main text. Without including
the sagging into our model, the resulting curves for dC/dz would go slightly higher (dashed) than those
that take into account the sagging and are shown in Fig. 2h (solid). This would lead to a slight
underestimate for the dielectric constants of confined water. Instead of the correct values ε⊥ = 15.5, 4.4
and 2.3 (filled symbols), ignoring the sagging effect (s = 3, 1.5 and 3 Å as measured in Fig. 2a-c) could
have resulted in ε⊥ = 10.2, 3.8 and 1.65 (open symbols) for h = 10, 3.8 and 1.4 nm, respectively. Note
that the relative impact of sagging is practically the same for all the three devices independently of their
h. This behavior can be traced back to the logarithmic decrease in the dC/dz signal with increasing ε⊥.
On one hand, the impact of any small topography artifact is expected to decrease with increasing h.
One the other hand, this is counterbalanced by the larger uncertainty with increasing water's ε⊥ due to
the logarithmic sensitivity discussed above. Hence, the effect of the residual sagging turns out to be
roughly the same for all the channels.
Fig. S5 Sagging effect. a Simulated dC/dz profiles with and without 3 Å-sagging (filled and open symbols, respectively)
for the device with h = 1.4 nm in Fig. 2 of the main text and ε⊥ = 2. Parameters: h = 1.1 nm and the sagging depth s = 3 Å
(filled symbols); same h and no sagging s = 0 (open); the other parameters are as in Fig. 2. Inset: Sketch of the model to
include sagging (not to scale). b Simulated dC/dz as functions of ε⊥ with (solid) and without (dashed curves) taking into
account the residual sagging for the three specific devices in Fig. 2 of the main text, s = 3, 1.5 and 3 Å for h = 10, 3.8 and
1.4 nm, respectively, as measured in Figs 2a-c. Device parameters are as in Supplementary Method S4. Open (filled)
symbols are the measured dC/dz and their projections onto the ε⊥ axis without (with) including the sagging.
12
Fig. S6 Dielectric imaging of large channels. a Topographic image and b Corresponding profile of a device with h ≈ 242
nm after filling it with water (blue curve). The topography profile of the hBN spacer is shown in cyan. c Corresponding
dielectric image and d Its averaged profile. Scale bar: 1 µm.
S8. Effect of the tip radius
We verified that the measured dielectric constant of confined water (Fig. 3 of the main text) was
independent of geometry and dimensions of our AFM probes. To this end, we repeated the dielectric
measurements using different probes. Their effective tip radii R were measured in situ before and after
each dielectric imaging experiment because values of R are required in our simulations.
Examples of the approach curves used to extract R are shown in Fig. S7a for the three specific
AFM probes employed in the experiments of Fig. 2 of the main text. Fig. S7b plots the measured R of
all the probes used in our experiments to extract the dielectric constants in Fig. 3. In this case, R is
plotted against the water thickness h. One can see that the used R are randomly scattered over the
expected range 100-200 nm indicated by the manufacturer and there is no correlation with h or other
geometrical parameters of our devices. This shows that the observed reduction in water's ε⊥ was
independent of the used AFM tips. We also confirmed that for the known tip radii and using hBN
crystals as test structures, our approach yielded the correct value of εhBN ≈ 3.5 (not shown).
Fig. S7 Impact of the tip radius. a Experimental approach curves (symbols) and their fitting (solid curves) to find tip
radii. The data correspond to the experiments of Fig. 2. b Measured R for the AFM probes used in our experiments for all h
shown in Fig. 3. The blue-shaded region indicates the nominal range expected for these probes.
13
S9. Intermediate water thickness
As described in the main text, the strong suppression of ε observed for water of intermediate
thickness can be readily explained by having a thin near-surface layer that is not polarizable in series
with normally polarizable water further into the bulk. The experimental data presented in Fig. 3 of the
main text were fitted for h > 2 nm using the tri-capacitor model shown in the figure's inset. In the
analysis where we used the weighted nonlinear least-squares method, we assumed constant ε⊥ = 2.1 for
the interfacial layer (as in our thinnest channels) and ε⊥ = 80 for the bulk water. The best fit yielded the
interfacial water thickness hi = 7.4 Å (Fig. 3 and Fig. S8, red solid curve; 95% confidence interval of
7.0–7.8 Å). This estimate agrees well with the widely accepted model of the layered structure of water
near surfaces, which extends 2-3 water diameters (∼ 3 Å) into the bulk. This model is also consistent
with the minimum ε⊥ ≈ 2.1 found for h < 2 nm.
It is instructive to compare the observed dependence ε⊥(h) with that predicted by the above model
for other values of the dielectric constant, in particular for those often assumed in the literature. As an
example, Fig. S8 shows the calculated curves for εi = 6 (roughly one order of magnitude smaller than in
bulk water7-9 and representative of water high-frequency behavior26-29). The resulting curves for the
interfacial thickness hi = 3, 6 and 9 Å lie well above our experimental results and do not intersect the
value ≈ 3.5 corresponding to hBN's dielectric constant. This illustrates again that it is impossible to
explain the obtained dielectric images showing zero and negative contrast without much stronger
suppression of ε⊥ than routinely assumed in the literature for interfacial water.
Fig. S8 Expected and measured suppression of the dielectric constant in interfacial water. Data shown in red are
same as in Fig. 3 of the main text. Blue curves: ε⊥(h) predicted by the same model but using εi = 6 instead of 2.1 and
thickness hi = 3, 6 and 9 Å (dotted, dashed and dashed-dotted curves, respectively).
14
Supplementary references:
30. S. V. Kalinin, A. Gruverman, Scanning Probe Microscopy, electrical and electromechanical
phenomena at the nanoscale (Springer, New York, 2007).
31. B. D. Terris, J. E. Stern, D. Rugar, H. J. Mamin, Contact electrification using force microscopy.
Phys. Rev. Lett. 63, 2669 (1989).
32. J. Hu, X. D. Xiao, D. F. Ogletree, M. Salmeron, Imaging the condensation and evaporation of
molecularly thin films of water with nanometer resolution. Science 268, 267-269 (1995).
33. S. Gómez-Moñivas, L. S. Froufe-Pérez, A. Caamaño, J. J. Sáenz, Electrostatic forces between
sharp tips and metallic and dielectric samples. Appl. Phys. Lett. 79, 4048 (2001).
34. L. Fumagalli, G. Ferrari, M. Sampietro, G. Gomila, Dielectric-constant measurement of thin
insulating films at low frequency by nanoscale capacitance microscopy. Appl. Phys. Lett. 91,
243110 (2007).
35. L. Fumagalli, G. Ferrari, M. Sampietro, G. Gomila, Quantitative nanoscale dielectric microscopy
of single-layer supported biomembranes. Nano Lett. 9, 1604-1608 (2009).
36. L. Fumagalli, G. Gramse, D. Esteban-Ferrer, M. A. Edwards, G. Gomila, Quantifying the dielectric
constant of thick insulators using electrostatic force microscopy. Appl. Phys. Lett. 96, 183107
(2010).
37. I. Horcas, R. Fernández, J. M. Gómez-Rodriguez, J. Colchero, J. Gómez-Herrero et al., WSxM a
software for scanning probe microscopy and a tool for nanotechnology. Rev. Sci. Instrum. 78,
013705 (2007).
38. G. Gomila, G. Gramse, L. Fumagalli, Finite-size effects and analytical modeling of electrostatic
force microscopy applied to dielectric films. Nanotechnology 25, 255702 (2014).
39. T. S. Jespersen, J. Nygård, Mapping of individual carbon nanotubes in polymer/nanotube
composites using electrostatic force microscopy. Appl. Phys. Lett. 90, 183108 (2007).
40. M. Zhao, X. Gu, S. E. Lowther, C. Park, Y. C. Jean et al., Subsurface characterization of carbon
nanotubes in polymer composites via quantitative electric force microscopy. Nanotechnology 21,
225702 (2010).
41. O. A. Castañeda-Uribe, R. Reifenberger, A. Raman, A. Avila, Depth-sensitive subsurface imaging
of polymer nanocomposites using second harmonic Kelvin probe force microscopy. ACS Nano 9,
2938–2947 (2015).
42. A. Tselev, J. Velmurugan, A. V. Ievlev, S. V. Kalinin, A. Kolmakov, Seeing through walls at the
nanoscale: microwave microscopy of enclosed objects and processes in liquids. ACS Nano 10,
3562–3570 (2016).
15
|
1212.3358 | 1 | 1212 | 2012-12-13T22:21:24 | Stabilization of a linear nanomechanical oscillator to its ultimate thermodynamic limit | [
"cond-mat.mes-hall",
"physics.optics"
] | The rapid development of micro- and nanooscillators in the past decade has led to the emergence of novel sensors that are opening new frontiers in both applied and fundamental science. The potential of these novel devices is, however, strongly limited by their increased sensitivity to external perturbations. We report a non-invasive optomechanical nano-stabilization technique and apply the method to stabilize a linear nanomechanical beam at its ultimate thermodynamic limit at room temperature. The reported ability to stabilize a mechanical oscillator to the thermodynamic limit can be extended to a variety of systems and increases the sensitivity range of nanosensors in both fundamental and applied studies. | cond-mat.mes-hall | cond-mat |
Stabilization of a linear nanomechanical oscillator to its ultimate
thermodynamic limit
E. Gavartin1, P. Verlot1∗and T.J. Kippenberg1,2†
1Ecole Polytechnique F´ed´erale de Lausanne, EPFL, 1015 Lausanne, Switzerland
2Max-Planck-Institut fur Quantenoptik, Hans-Kopfermann-Strasse 1, 85748 Garching, Germany
November 11, 2018
Abstract
The rapid development of micro- and nanooscillators in the past decade has led to the emergence of novel
sensors that are opening new frontiers in both applied and fundamental science. The potential of these novel
devices is, however, strongly limited by their increased sensitivity to external perturbations. We report a non-
invasive optomechanical nano-stabilization technique and apply the method to stabilize a linear nanomechanical
beam at its ultimate thermodynamic limit at room temperature. The reported ability to stabilize a mechanical
oscillator to the thermodynamic limit can be extended to a variety of systems and increases the sensitivity range
of nanosensors in both fundamental and applied studies.
Thermal noise is well known to be a ubiquitous and fundamental limit for the sensitivity of micro- and nanome-
chanical oscillators [1, 2, 3]. This noise arises from the unavoidable coupling of the mechanical device to a thermal
bath [4], which is responsible for an incoherent motion with random amplitude and phase [5]. A number of precision
measurements based on using nanomechanical resonators, such as gradient force [6, 7], mass [8, 9] and charge [10]
detection, or time and frequency control [11], consist in detecting linear changes induced by the measured system
on the phase of the coherently driven nanomechanical sensor [1, 12]. These applications are thus theoretically
limited by the random phase fluctuations related to thermal motion. Decreasing the effect of thermal noise can
be accomplished by increasing the relative contribution of the coherent drive [1]. However, the latter has to be
kept below a certain threshold, above which the mechanical oscillator becomes nonlinear [3, 13]: At this threshold,
thermal noise constitutes an irreducible sensing limit for linear nanomechanical measurements. In practice, even
when driven close to their nonlinear onset, nanomechanical resonators presently operate far away from the thermal
limit [8, 14, 15, 16]. This is due to a plethora of external perturbation sources acting on the oscillator [2], such
as temperature fluctuations [17], adsorption-desorption noise [18] or molecular diffusion along the oscillator [19].
While several proposals have been made [20, 21] and implemented [22, 23] to decrease excess phase noise, they are
based on oscillators being driven into the nonlinear regime and require specific operating conditions, thus making
the schemes difficult to adapt for a general class of resonators. In contrast, here we introduce an approach that
generally applies to linear nanomechanical resonators. This approach employs an auxiliary mechanical mode as a
frequency noise detector, whose output is used to stabilize the frequency of the fundamental out-of-plane mode of a
nanomechanical beam. Its experimental implementation enables quasi-optimal linear operation at room tempera-
ture, with an almost perfect external phase noise cancellation, as demonstrated for the nanomechanical beam driven
just below its nonlinear onset. Hence, our system operates close to its ultimate thermodynamic linear sensing limit.
Our scheme can be readily incorporated into a variety of other systems used for applications in [7, 8, 9], frequency
control [11] or fundamental studies [24, 25].
Our system consists of an integrated hybrid optomechanical transducer described elsewhere [26]. Briefly, it
consists of a 90 µm × 700 nm × 100 nm low dissipation nanomechanical beam made of high-stress silicon nitride
(Si3N4) placed in the near-field of a high-Q whispering gallery mode (WGM) confined in a disk-shaped microcavity
(cf. Fig. 1(a)). Laser light is coupled in and out of the oscillator with a tapered fiber. Mechanical motion is read
out using the optomechanical interaction by placing the laser frequency at mid-transmission of the optical mode,
such that the phase fluctuations of light induced by the mechanical motion are directly transformed into amplitude
fluctuations readily detected with a photodiode [27].
∗Corresponding author; Email: pierre.verlot@epfl.ch
†Corresponding author; Email: tobias.kippenberg@epfl.ch
1
Our stabilization scheme is based on the intuition that most of the observed external frequency noise in our
system arises from perturbations affecting the entire beam geometry (e.g. temperature fluctuations causing causing
changes in length, strain among others). Under such conditions, the induced frequency fluctuations of the various
eigenmodes are expected to be highly correlated. One of these modes can thus be used as a "noise detector"
whose output serves as an error signal in a feedback mechanism applied to the beam, enabling a cancellation
of the geometry variations and thereby a stabilization of all eigenmodes (cf. Fig. 2(a)).
In the following our
analysis will focus more specifically on two modes, which are the lowest-order out-of-plane mode, which we seek
to stabilize, and the lowest-order in-plane mode, which is used as the noise detector. These two modes (referred
to as mode 1 and 2, respectively, in the following) have resonance frequencies νM,1 = ΩM,1/2π = 2.84 MHz and
νM,2 = ΩM,2/2π = 3.105 MHz as well as linewidths of ΓM,1/2π = 7.5 Hz and ΓM,2/2π = 48 Hz. Note that using the
in-plane mode as the noise detector has several advantages: First, the accurate position resolution of the beam's
intrinsic motion enables to achieve a large bandwidth (νD (cid:39) 20 × ΓM,2/2π (cid:39) 1 kHz, cf. Fig. 1(d)) over which
frequency fluctuations can be detected with thermal limited imprecision. Second, this geometry enables a selective
exposure of the perpendicular out-of-plane mode to external signals, thus preserving its sensing capabilities when
feedback is turned on. Experimentally, the frequency fluctuations of each mode are detected via its out-of-phase
response to an external radiation pressure coherent drive with a frequency of ΩF,i (i ∈ {1, 2}), similar to a phase-
locked-loop detection. We choose the driving strengths such that both modes have an amplitude of just below the
respective nonlinear thresholds. Both measured out-of-phase quadratures for mode 1 and 2 are shown in Figure
2(d) with the demodulated response plotted versus the detuning ωi/2π = (ΩF,i − ΩM,i)/2π between the driving
and the resonance frequency. By putting the external drive close to the resonance frequency (ΩF,i (cid:39) ΩM,i), we
can monitor the resonance frequency as small changes on the order of δΩi (cid:46) ΓM,i that are proportional to the
out-of-phase quadrature signals. Our feedback mechanism relies on DC-photothermal actuation applied to the
beam by sending a third amplitude modulated laser tone (control beam) with input power in the mW range (see
Fig. 1(e)). The frequency shift follows linearly the optical input power as shown in Figure 2(b) for mode 1.
Figure 2(c) shows the frequency response of modes 1 and 2 to a triangular wave function applied to the control
beam. One can already note the similarities of the fluctuations superimposed to the response triangles in both
cases, indicating the common origin of the frequency noise over the various eigenmodes.
These noise correlations can be quantitatively confirmed by determining the frequency correlations C1−2[ω] =
2 [ω](cid:105)/ (Sν1 [ω]Sν2[ω])1/2 (with δνi[ω] denoting the Fourier transform of the frequency fluctuations of mode
(cid:104)δν1[ω]δν∗
i, Sνi its spectrum and (cid:104)...(cid:105) statistical average), which are represented in Figure 3(c) (inset). It should be emphasized
that in absence of external frequency noise, the frequency thermal imprecisions over modes 1 and 2 are expected to
be uncorrelated: the high level of correlations is therefore a signature of the presence of external frequency noise.
Experimentally, this excess of frequency noise is determined by comparing the phase noise spectrum Sφφ,i of mode
i to its thermal equivalent imprecision, which in the strong drive limit is given by [2, 5]
φφ,i [ω] (cid:39)
Sth
osc,i(cid:105) ×
1
(cid:104)X 2
(cid:16)
ΓM,ikBT
meff,iΩ2
M,i
ω2 + Γ2
M,i/4
(cid:17) ,
(1)
with (cid:104)X 2
osc,i(cid:105) as the variance of the driven amplitude, meff,i as the effective mass, kB as Boltzmann's constant,
T as the temperature and ω as the Fourier frequency. Equation 1 simply reflects the fact that phase noise can be
interpreted as the "angle" under which the thermal distribution appears from the center of the phase space (see Fig.
3(b)). The time evolution of the frequency drift δνM,i, as determined from the mechanical out-of-phase response,
is shown in Figure 3(a) for mode 1 and mode 2. It is clearly evident that the frequency noise is strongly decreased
for the stabilized case. These time traces are used to obtain the phase noise spectrum via a Fourier transform.
The results are shown in Figure 3(c), both in the non-stabilized (red) and stabilized (blue) cases. Dark colored
curves correspond to mode 1 and light colored to mode 2. The results are calibrated using the inferred driven
root-mean-square amplitudes (cid:104)X 2
2 = 4.1 nm, just below their respective nonlinear
thresholds. When the system is not stabilized, the phase noise of both modes is clearly above the thermal limit.
With the stabilization scheme turned on, the phase noise of mode 1 is reduced to the thermal limit in the frequency
range of ∼10-50 Hz. The spectrum of mode 2 implies that its phase noise was reduced to even below the thermal
limit, which is clearly unphysical. This artifact arises from squashing, which is generally observed in an in-loop
measurement where the feedback gain is so large that the reinjected background - in our case the thermally induced
frequency fluctuations - is the dominating part of the error signal. As the spectrum of mode 1 is obtained in an
out-of-loop measurement, reinjection of background would manifest itself correctly as an increase in the phase noise
√
spectrum. Since the thermal frequency noise background Sth
Hz) in
Hz), the reinjection of noise is limited for mode 1 - the mode of interest - to a
comparison to mode 1 (41 mHz/
√
φφ,i is smaller for mode 2 (28 mHz/
ωω,i = ω2Sth
osc,1(cid:105) 1
2 = 1.7 nm and (cid:104)X 2
osc,2(cid:105) 1
2
level of 1.5 dB with respect to the thermal limit.
We also observe the effect of stabilization on the correlations between the frequency noise of both modes. As
noted above, noise suppression is expected to correspond to a significant decrease of the frequency noise corre-
lations, as the noises resulting from fundamental thermodynamic fluctuations are uncorrelated. We confirm this
experimentally as shown in the inset in Figure 3(c).
To access the long-term stability for mode 1, we determine its Allan deviation. In order to avoid measurement
artifacts, the mechanical motion is no longer driven using an external frequency reference, but is maintained in self-
oscillation using a feedback circuit [28, 26] (see Fig. 1(e)). The readout signal is fed into a frequency counter (Agi-
lent 53230), which determines the Allan deviation as (cid:104)δνM,1/νM,1(cid:105)τ =
with ¯νM,k as the averaged frequency in the kth discrete time interval over the gate time τ .
k=1 ((¯νM,k+1 − ¯νM,k) /νM )2(cid:105)1/2
(cid:80)N
2(N−1)
(cid:104)
1
,
The obtained results are shown in Figure 3(d), where the red and blue dots represent the values of the fractional
Allan deviation of mode 1 as a function of gate time in the non-stabilized and stabilized cases, respectively. The slow
fluctuations are significantly reduced in presence of stabilization, with the noise suppression even exceeding 20 dB
at the second scale. The achieved long-term stability is further compared to the theoretical limits of our system.
For a self-sustained mechanical resonator, the thermo-mechanically limited Allan variance σ1(τ ) = (cid:104)δνth
M,1/νM,1(cid:105)τ
can be shown to be given by (see Supplementary section S2.2):
(cid:32) (cid:104)X 2
th,1(cid:105)
osc,1(cid:105) ×
(cid:104)X 2
1
QM,1ΩM,1τ
(cid:33)1/2
σ1(τ ) =
,
(2)
th,1(cid:105)1/2.
The data of Figure 3(d) were acquired in presence of a self-sustained displacement (cid:104)X 2
This analysis shows that our stabilization scheme enables reducing external frequency noise close to the thermal
limit, but not closer than a factor of 2 (that is 6 dB in power), which disagrees with the spectral data of Figure 3(c).
This can be explained by a reduced sensitivity of noise detection: Mode 2 being externally driven, the expression
of its thermal limited Allan deviation differs from mode 1 and is described by (see Supplementary section 2.2):
osc,1(cid:105)1/2 (cid:39) 100(cid:104)X 2
(cid:32) (cid:104)X 2
σ2(τ ) =
th,2(cid:105)
osc,2(cid:105) × 3 + e−ΓM,2τ − 4e− ΓM,2τ
(cid:104)X 2
(ΩM,2τ )2
2
(cid:33) 1
2
.
osc,2(cid:105)1/2 (cid:39) 102(cid:104)X 2
With (cid:104)X 2
(cid:104)δνth
limit, which is given by:
(3)
M,2(cid:105)τ(cid:39)0.1 s (cid:39) 10−8νM,2 is comparable to
th,2(cid:105)1/2, the noise detection imprecision (cid:104)δνth
M,1(cid:105)τ(cid:39)0.1 s (cid:39) 10−8νM,1 (Eq. 2), and therefore has to be taken into account when determining the stabilization
(cid:1)1/2
(cid:104)δνlim
(4)
M,2(cid:105)τ as well as the overall stabilization limit given by Eq. 4 are represented
in Figure 3(d), showing very good agreement with the experimental data up to gate times in the 100 ms range. On
longer timescales, the frequency fluctuations are stabilized to a flat level in the 10 ppb range, which we attribute
to insufficient gain.
M,1(cid:105)τ = (cid:0)(cid:104)δνth
The thermal limit for mode 2 (cid:104)δνth
τ + (cid:104)δνth
M,2(cid:105)2
M,1(cid:105)2
.
τ
Finally, we analyze the frequency stability and its improvement with the stabilization scheme by using a third
independent method based on a recent proposal [29]. Briefly, this method is based on the simultaneous measurement
of both in-phase and out-of-phase quadratures X1(t) and X2(t) of the coherently driven mechanical motion. These
quadratures are used to reconstruct the complex motion trajectory u(t) = X1(t)+iX2(t) whose moments (cid:104)un(cid:105) can be
shown to be insensitive to thermal noise, enabling the extraction and quantitative study of external frequency noise.
Thus, the presence of external frequency fluctuations δΩM(t) is revealed by an anomaly of the ratio r = (cid:104)u2(cid:105)/(cid:104)u(cid:105)2,
which falls below unity by an amount proportional to the frequency noise power. Indeed, the quadratures of the
coherently driven motion write as the sum of a steady and a fluctuating part X1,2(t) = (cid:104)X1,2(cid:105) + δX1,2(t). A straight
forward expansion gives (cid:104)u2(cid:105) = (cid:104)u(cid:105)2 + (cid:104)(δX1)2(cid:105) − (cid:104)(δX2)2(cid:105) − 2i(cid:104)δX1δX2(cid:105). With the thermal contribution to the
quadrature fluctuations δX th
1,2 being uncorrelated and with identical variances, the previous expression becomes
(cid:104)u2(cid:105) = (cid:104)u(cid:105)2 +(cid:104)(δX ext
1,2 denoting the quadratures fluctuations due to the
presence of external frequency noise. For a resonantly driven system, the in-phase quadrature X1 is maximum, and
(cid:104)u(cid:105)2.
δX ext
1 = (∂X1/∂ω) δΩM(t) = 0, (cid:104)u2(cid:105) is thus reduced to the quantity (cid:104)(δX ext
)2(cid:105) (cid:39) (∂X2/∂ω)2 (cid:104)δΩ2
)2(cid:105)− 2i(cid:104)δX ext
)2(cid:105)−(cid:104)(δX ext
M(cid:105) (cid:39) 4(cid:104)δΩ2
M(cid:105)
(cid:105), with X ext
1 δX ext
1
2
2
2
Γ2
M
3
At the mechanical resonance frequency, r gives a direct access to the frequency noise power, with no calibration
being required. In a more sophisticated approach [29], it can be shown that for a weak Gaussian frequency noise,
the ratio r[ω] varies along the driving frequency as
r[ω] = 1 − Sωω
ΓM + 2iω
,
(5)
with Sωω denoting the frequency noise spectral density. Figure 4 shows the experimental determination of r[ω]
we performed with our system, both in the non-stabilized (Fig. 4(c)) and in the stabilized cases (Fig. 4(c,d)).
Figures 4(a) and 4(b) show the realizations of the phase-space trajectory used to determined r[ω (cid:39) 0] in the
non-stabilized and stabilized configurations respectively.
As expected, without stabilization we obtain a discernible dip around the mechanical resonance frequency as
shown in Figure 4(c). The dip depth is about 1 − r[ω = 0] (cid:39) 4 × 10−2 with the deviations from the expected
shape resulting from long-term frequency drifts that change δω. Following Eq. 5 such a dip is expected to
Hz)2, that is about 15 dB above the thermal limit
correspond to a frequency noise Sνν = Sωω/(2π)2 = (218 mHz/
νν[ω] = ω2
Hz)2, in very good agreement with the results presented in Fig. 3(c). When
Sth
the stabilization is switched on, the dip is greatly reduced to a level of 1 − r[ω = 0] (cid:39) 6 × 10−4, corresponding to
Hz)2 that is 1.5 dB above the expected thermal limit. This value confirms the
a residual noise Sνν = (27 mHz/
origin of this remaining imprecision as resulting from squashing, which is expected to generate the very same noise
excess as explained above.
√
4π2 Sφφ,1[ω] (cid:39) (41 mHz/
√
√
In conclusion, we have proposed and implemented a scheme allowing a non-invasive stabilization of a mechanical
mode. This technique proves to be remarkably efficient, as shown by the almost perfect noise cancellation for the
lowest order out-of-plane mode of a high-Q nanomechanical resonator operated just below its nonlinear threshold,
which places our system close to the optimum noise limit at room temperature. Our method is very general and
can be readily applied to a number of ultra-sensitive nanomechanical systems: First, our scheme allows using any
mechanical mode for detection of frequency noise and we successfully demonstrated noise cancellation using the
third-order out-of-plane mode. To apply an error signal one needs a DC restoring force, which is widely available
either via photothermal forces in optomechanical systems such as in our work or as electrostatic forces in electrical
systems [30, 31, 32]. Importantly, our scheme fully preserves the detection capabilities of the stabilized system,
which we have experimentally verified by showing efficient radiation-pressure induced thermomechanical squeezing
[33] of the fundamental out-of-plane mode [34] that was impossible to observe without stabilization due to long-term
frequency drifts.
The fabrication was carried out at the Center of MicroNanotechnology (CMi) at EPFL. Funding for this work
was provided by the NCCR Quantum Photonics, the SNF, DARPA Orchid and an ERC.
References
[1] Albrecht, T. R., Grutter, P., Horne, D. & Rugar, D. Frequency modulation detection using high-q cantilevers
for enhanced force microscope sensitivity. J. Appl. Phys. 69, 668 -- 673 (1991).
[2] Cleland, A. N. & Roukes, M. L. Noise processes in nanomechanical resonators. J. App. Phys. 92, 2758 -- 2769
(2002).
[3] Ekinci, K. L. & Roukes, M. L. Nanoelectromechanical systems. Rev. Sci. Instrum. 76, 061101 (2005).
[4] Saulson, P. Thermal noise in mechanical experiments. Physical Review D 42, 2437 (1990).
[5] Briant, T., Cohadon, P., Pinard, M. & Heidmann, A. Optical phase-space reconstruction of mirror motion at
the attometer level. The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics 22,
131 -- 140 (2003).
[6] Giessibl, F. et al. Atomic resolution of the silicon (111)-(7x7) surface by atomic force microscopy. Science
(New York, NY) 267, 68 (1995).
[7] Rugar, D., Budakian, R., Mamin, H. & Chui, B. Single spin detection by magnetic resonance force microscopy.
Nature 430, 329 -- 332 (2004).
4
[8] Chaste, J. et al. A nanomechanical mass sensor with yoctogram resolution. Nature Nanotech. 7, 300 -- 303
(2012).
[9] Jensen, K., Kim, K. & Zettl, A. An atomic-resolution nanomechanical mass sensor. Nature Nanotech. 3,
533 -- 537 (2008).
[10] Cleland, A. & Roukes, M. A nanometre-scale mechanical electrometer. Nature 392, 160 -- 162 (1998).
[11] Nguyen, C.-C. Mems technology for timing and frequency control. Ultrasonics, Ferroelectrics and Frequency
Control, IEEE Transactions on 54, 251 -- 270 (2007).
[12] Binnig, G., Quate, C. & Gerber, C. Atomic force microscope. Phys. Rev. Lett. 56, 930 -- 933 (1986).
[13] Nayfeh, A. & Mook, D. Nonlinear Oscillations (Wiley, New York, 1979).
[14] Feng, X. L., White, C. J., Hajimiri, A. & Roukes, M. L. A self-sustaining ultrahigh-frequency nanoelectrome-
chanical oscillator. Nature Nanotech. 3, 342 -- 346 (2008).
[15] Lee, J., Shen, W., Payer, K., Burg, T. P. & Manalis, S. R. Toward attogram mass measurements in solution
with suspended nanochannel resonators. Nano Lett. 10, 2537 -- 2542 (2010).
[16] Fong, K. Y., Pernice, W. H. P. & Tang, H. X. Frequency and phase noise of ultrahigh Q silicon nitride
nanomechanical resonators. Phys. Rev. B 85, 161410 (2012).
[17] Ekinci, K., Yang, Y. & Roukes, M. Ultimate limits to inertial mass sensing based upon nanoelectromechanical
systems. J. Appl. Phys. 95, 2682 -- 2689 (2004).
[18] Yang, Y. T., Callegari, C., Feng, X. L. & Roukes, M. L. Surface adsorbate fluctuations and noise in nanoelec-
tromechanical systems. Nano Lett. 11, 1753 -- 1759 (2011).
[19] Atalaya, J., Isacsson, A. & Dykman, M. I. Diffusion-induced dephasing in nanomechanical resonators. Phys.
Rev. B 83, 045419 (2011).
[20] Yurke, B., Greywall, D. S., Pargellis, A. N. & Busch, P. A. Theory of amplifier-noise evasion in an oscillator
employing a nonlinear resonator. Phys. Rev. A 51, 4211 -- 4229 (1995).
[21] Kenig, E. et al. Passive phase noise cancellation scheme. Phys. Rev. Lett. 108, 264102 (2012).
[22] Antonio, D., Zanette, D. H. & Lopez, D. Frequency stabilization in nonlinear micromechanical oscillators.
Nature Commun. 3 (2012).
[23] Villanueva, L. et al. A nanoscale parametric feedback oscillator. Nano Lett. 11, 5054 -- 5059 (2011).
[24] Verlot, P., Tavernarakis, A., Briant, T., Cohadon, P. & Heidmann, A. Scheme to probe optomechanical
correlations between two optical beams down to the quantum level. Phys. Rev. Lett. 102, 103601 (2009).
[25] Arcizet, O. et al. A single nitrogen-vacancy defect coupled to a nanomechanical oscillator. Nature Phys. 7,
879 -- 883 (2011).
[26] Gavartin, E., Verlot, P. & Kippenberg, T. A hybrid on-chip optomechanical transducer for ultrasensitive force
measurements. Nature Nanotech. 7, 509 -- 514 (2012).
[27] Cai, M., Painter, O. & Vahala, K. J. Observation of critical coupling in a fiber taper to a silica-microsphere
whispering-gallery mode system. Phys. Rev. Lett. 85, 74 -- 77 (2000).
[28] Cohadon, P. F., Heidmann, A. & Pinard, M. Cooling of a mirror by radiation pressure. Phys. Rev. Lett. 83,
3174 -- 3177 (1999).
[29] Maizelis, Z. A., Roukes, M. L. & Dykman, M. I. Detecting and characterizing frequency fluctuations of
vibrational modes. Phys. Rev. B 84, 144301 (2011).
[30] Kozinsky, I., Postma, H., Bargatin, I. & Roukes, M. Tuning nonlinearity, dynamic range, and frequency of
nanomechanical resonators. Appl. Phys. Lett. 88, 253101 -- 253101 (2006).
[31] Faust, T., Krenn, P., Manus, S., Kotthaus, J. P. & Weig, E. M. Microwave cavity-enhanced transduction for
plug and play nanomechanics at room temperature. Nature Commun. 3 (2012).
5
[32] Poggio, M. et al. An off-board quantum point contact as a sensitive detector of cantilever motion. Nature
Phys. 4, 635 -- 638 (2008).
[33] Rugar, D. & Grutter, P. Mechanical parametric amplification and thermomechanical noise squeezing. Phys.
Rev. Lett. 67, 699 -- 702 (1991).
[34] Gavartin, E., Verlot, P. & Kippenberg, T. Efficient thermomechanical squeezing of a high-qm nanomechanical
oscillator via radiation pressure. In preparation .
6
(a) Optical micrograph
Figure 1: The hybrid optonanomechanical system and experimental setup.
(b) Magnified view of (a)
showing 4 of the 35 hybrid structures present on the chip used in the experiment.
showing the details of the hybrid structure (false colors). (c) and (d) Thermal displacement spectra S1/2
xx [Ω] of the
fundamental out-of-plane (mode 1) and in-plane (mode 2) modes, respectively. The green curves denote the thermal
motion of the mechanical modes. The insets show finite-element simulations of the respective mechanical modes
with the red arrows representing the direction of displacement. The gray area in (d) represents the bandwidth
∆νD in which the stabilization scheme enables noise cancellation at the fundamental thermodynamical limit. (e)
Experimental setup for the stabilization mechanism, with the readout and actuation of the mechanical oscillator
being obtained via optical means with external cavity diode lasers (ECDL). The readout signal from the photodiode
(PD) is split into a demodulation circuit for the directly driven noise detector mode 2 and a circuit for mode 1,
which is either a directly driven (straight line) or self-driven (gray line) circuit. Two amplitude modulators provide
the means to drive the mechanical modes (AM2) and to control the mechanical frequency by changing the optical
power coupled into the cavity (AM1). The frequency fluctuations δνM,1 and δνM,2 are recorded either with an
oscilloscope, when the system is operated in the direct driving mode or δνM,1 is recorded with a frequency counter
when the mode is self-driven.
7
Figure 2: Detecting and stabilizing frequency noise with an optonanomechanical system. (a) Scheme
describing the stabilization principle. Phase fluctuations of the in-plane mode (mode 2) are detected by determining
its out-of-phase response to a coherent drive and serve as an error signal. By applying a feedback control based
on these fluctuations, the out-of-plane mode (mode 1) is stabilized. (b) Resonance frequency shift ∆νM,1 of mode
1 in terms of its mechanical linewidth ΓM,1 versus input optical power. (c) Resonance frequency shifts ∆νM,1 and
∆νM,2 of modes 1 and 2, respectively, for a saw-tooth modulation of the input optical power P . The correlation of
the response of both modes is clearly visible. (d) The out-of-phase mechanical response of mode 2 (upper graph)
and mode 1 (lower graph) to a coherent drive versus the detuning (ΩF − ΩM)/2π.
8
Figure 3: Frequency stabilization at the ultimate thermodynamic limit. (a) Time evolution of the fre-
quency drift δνM for mode 1 (upper graph) and mode 2 (lower graph). The non-stabilized case is given by the
red curve and the stabilized case by the grey one. (b) Thermal equivalent phase noise in phase-space: X1 and X2
are the in-phase and out-of-phase components of mechanical motion, respectively, and form the phase-space. In
this representation, the phase of mechanical motion identifies to the azimuthal coordinate φ. The phase noise δφ
simply corresponds to the angle under which the thermal distribution appears from the center. (c) Frequency noise
excess of modes 1 (dark-colored) and 2 (light-colored) over the Fourier frequency components. The red and blue
curves show the non-stabilized and stabilized case, respectively. The stabilization scheme reduces the frequency
noise by over 10 dB up to 90 Hz and allows to stabilize mode 1 to the thermal limit for a wide bandwidth. Inset:
The correlation of frequency response for both modes for the non-stabilized (red) and the stabilized (blue) case.
(d) The fractional Allan deviation for the non-stabilized (red) and stabilized (blue) case. The dashed line shows
the thermal limit associated with mode 1 for a self-driven oscillator. The dot-dashed line shows the thermal limit
for mode 2, which was externally driven. The full line shows the thermal limit for mode 1 in presence of feedback
(Eq.4) by taking into account the reinjected imprecision from mode 2.
9
Figure 4: Frequency noise self-characterization. (a) A realization of the phase-space trajectory acquired in
the non-stabilized case when driving the nanomechanical beam at the mechanical resonance frequency (ω (cid:39) 0).
The acquisition duration is on the order of one minute. The red Gaussian disk represents the thermal distribution
of variance (cid:104)X 2
th(cid:105), responsible for an equivalent phase noise δφth.(b) Same as in (a), but for the stabilized case.
The remaining phase noise clearly appears as being substantially reduced compared to non-stabilized case. (c) The
ratio (cid:104)u2(cid:105)/(cid:104)u(cid:105)2 for mode 1, which signifies the presence of frequency fluctuations due to non-thermal contributions,
versus detuning from resonance frequency (red: nonstabilized; blue: stabilized). The red dashed-line corresponds
to the model given by Eq. 5 for a Gaussian noise with frequency power spectral density 15 dB above the thermal
limit. Stabilization greatly reduces the dip due to excessive non-thermal noise. (d) Detailed view of (cid:104)u2(cid:105)/(cid:104)u(cid:105)2
for the stabilized case. The blue dasehd-line correspond to the model given by Eq. 5 for a Gaussian noise with
frequency power spectral density 1.5 dB above the thermal limit.
10
Supplementary Material - Stabilization of a strongly driven nanomechanical
oscillator to the thermal limit
1 Phase noise spectrum of an oscillator at thermal equilibrium
In this section, we present the calculation of a thermal equivalent phase noise for a mechanical resonator at thermal
equilibrium. Both cases of a free running and externally driven oscillator are treated successively. In the following,
we assume the oscillator to be well described within the weakly damped harmonic approximation, with mechanical
susceptibility χ[Ω] given by:
χ[Ω] =
1
M (Ω2
M − Ω2 − iΓMΩ)
,
(S 1)
with M , ΩM and ΓM as the mass, mechanical resonance frequency and damping rate respectively.
1.1 Free-running thermally driven oscillator
Figure S1: Phase-space representation of a mechanical state at thermal equilibrium. (a) Phase-space trajectory of a
mechanical oscillator left at thermal equilibrium. The trajectory describes in cartesian coordinates (X1(t), X2(t)),
or equivalently in polar coordinates ((t), ϕ(t)). (b) Phase-space trajectory of a mechanical resonator driven at the
mechanical resonance. The thermal state is "displaced" of a quantity (cid:104)X 3
osc(cid:105)1/2 along the abscise.
We start this calculation with noting that the phase ϕ(t) of a thermal state x(t) can be expressed as a function
of its slowly varying in-phase and out-of-phase motion components X1(t) and X2(t) (x(t) = X1(t) cos ΩMt +
X2(t) sin ΩMt, ΩM/2π denoting the mechanical resonance frequency) as follows:
(cid:18) X2(t)
(cid:19)
X1(t)
ϕ(t) = 2 arctan
.
(S 2)
Here the factor of 2 preceding the arctan function is to allow the phase to vary over the interval [0, 2π]. In order to
obtain a suitable expression for deriving the spectral properties of ϕ, we subsequently take the derivative of Eq.S 2,
which gives:
(t) ϕ(t) = X1(t)X2(t) − X2(t)X1(t),
1
2
(S 3)
with (t) = X 2
the autocorrelation of the quantity ϕ can be factorized, which leads to:
2 (t) being proportional to the energy operator. The phase and the energy being independent,
1 (t) + X 2
1
4
(cid:104)(t)(t(cid:48))(cid:105)(cid:104) ϕ(t) ϕ(t(cid:48))(cid:105) = (cid:104) X1(t) X1(t(cid:48))(cid:105)(cid:104)X2(t)X2(t(cid:48))(cid:105) + (cid:104) X2(t) X2(t(cid:48))(cid:105)(cid:104)X1(t)X1(t(cid:48))(cid:105)
−(cid:104) X1(t)X1(t(cid:48))(cid:105)(cid:104)X2(t) X2(t(cid:48))(cid:105) − (cid:104) X1(t(cid:48))X1(t)(cid:105)(cid:104)X2(t(cid:48)) X2(t)(cid:105).
(S 4)
11
In the above equation, (cid:104)...(cid:105) is for statistical average, t and t(cid:48) for two arbitrary moments in time, and the factorization
on the right side arises from the well known statistical independence of the motion quadratures X1 and X2. For
evident reasons of symmetry, the two terms on the right side of Eq. S 4 on the first line (resp. on the second line)
are identical such that it can be written:
1
8
(cid:104)(t)(t(cid:48))(cid:105)(cid:104) ϕ(t) ϕ(t(cid:48))(cid:105) = (cid:104) X1(t) X1(t(cid:48))(cid:105)(cid:104)X1(t)X1(t(cid:48))(cid:105) − (cid:104) X1(t)X1(t(cid:48))(cid:105)(cid:104)X1(t) X1(t(cid:48))(cid:105).
(S 5)
We now determine each factor appearing on the ride side of Eq. S 5. We start with the simpler one (cid:104)X1(t)X1(t(cid:48))(cid:105),
which identifies with the autocorrelation function of the quadrature X1. Assuming the stationarity of the problem,
we have (cid:104)X1(t)X1(t(cid:48))(cid:105) = (cid:104)X1(0)X1(τ = t(cid:48) − t)(cid:105), and the analytic expression of this autocorrelation function can be
obtained via the Fourier transform of the spectrum of X1 SX,1[ω] = χ[ΩM + ω]2ST
F [ω] = 4M ΓMkBT
is the thermal force spectral density):
F [ω] (where ST
(cid:104)X1(0)X1(τ )(cid:105) =
dωeiωτ SX,1[ω]
=
ST
F
(2M ΩM)2ΓM
e− ΓM
2 t.
(cid:90) +∞
−∞
(cid:18)
X1:
(S 6)
(S 7)
2 t(cid:19)
,
Similarly, noting that S X,1[ω] = ω2SX,1[ω], one obtains the autocorrelation function of
(cid:104) X1(0) X1(τ )(cid:105) =
ST
F
(2M ΩM)2
δ(t) − ΓM
4
e− ΓM
ture X1 as the convolution between its impulse response χ(t) =(cid:82) +∞
where δ is for the Dirac delta function. To determine the cross correlations (cid:104) X1X1(cid:105) and (cid:104)X1 X1(cid:105), we write the quadra-
2 t (Θ
F δ(t − t(cid:48))) [5].
denoting the Heaviside step function) and an effective thermal force Fth (with (cid:104)Fth(t)Fth(t(cid:48))(cid:105) = ST
After a tedious but simple calculation, we obtain:
−∞ dωeiωtχ[ΩM + ω] = 1/(2M ΩM)Θ(t)e− ΓM
F )2
(cid:104) X1(t)X1(t(cid:48))(cid:105)(cid:104)X1(t) X1(t(cid:48))(cid:105) = − (ST
(2M ΩM)2 × e−ΓMt
4
.
(S 8)
Combining Eqs. S 5, S 6, S 7, and S 8, we finally find:
The autocorrelation of remains to be calculated. To do so, we first note that (cid:104)(0)(τ )(cid:105) = 2(cid:0)(cid:104)X 2
(2M ΩM)2 × δ(t)e− ΓM
(cid:104)(t)(t(cid:48))(cid:105)(cid:104) ϕ(t) ϕ(t(cid:48))(cid:105) =
2 t.
1
8
(ST
F )2
The equipartition of the energy gives immediately the second term of the previous parenthesis, (cid:104)X 2
(kBT /M Ω2
ing with expanding it as:
1 (0)(cid:105)2 =
1 , remains to be determined, which we do start-
M)2. The first one, that is the autocorrelation of X 2
(S 9)
1 (0)(cid:105)2(cid:1).
1 (0)X 2
1 (τ )(cid:105) + (cid:104)X 2
(cid:90)(cid:90)(cid:90)(cid:90)
(cid:104)X 2
1 (0)X 2
1 (τ )(cid:105) =
dt1dt2dt3dt4χ(0 − t1)χ(0 − t2)χ(τ − t3)χ(τ − t4)(cid:104)Fth(t1)Fth(t2)Fth(t3)Fth(t4)(cid:105),
[−∞,+∞]4
(S 10)
(Fth(t1), Fth(t2), Fth(t3), Fth(t4)) being a multivariate Gaussian distribution, Wick's theorem applies, and the sta-
tistical average of Eq.S 10 can be rewritten as:
(cid:104)Fth(t1)Fth(t2)Fth(t3)Fth(t4)(cid:105) = (cid:104)Fth(t1)Fth(t2)(cid:105)(cid:104)Fth(t3)Fth(t4)(cid:105) + (cid:104)Fth(t1)Fth(t3)(cid:105)(cid:104)Fth(t2)Fth(t4)(cid:105)
+(cid:104)Fth(t1)Fth(t4)(cid:105)(cid:104)Fth(t2)Fth(t3)(cid:105).
(S 11)
The previous equation shows that the fourth moment of the thermal force is a combination of products of its
autocorrelation functions (cid:104)Fth(ti)Fth(tj)(cid:105) = ST
F [Ω (cid:39) Ωm]δ(ti − tj):
(cid:104)Fth(t1)Fth(t2)Fth(t3)Fth(t4)(cid:105) (cid:39) Sth
FF[Ωm]2 {δ(t1 − t2)δ(t3 − t4) + δ(t1 − t3)δ(t2 − t4)
+δ(t1 − t4)δ(t2 − t3)} .
(S 12)
12
Replacing Eq.S 12 in Eq.S 10, one obtains:
(cid:104)X 2
1 (0)X 2
1 (τ )(cid:105) = (ST
F )2
(cid:40)(cid:18)(cid:90) +∞
−∞
(cid:19)2
(cid:18)(cid:90) +∞
−∞
+ 2
dt1χ2(t1)
(cid:19)2(cid:41)
.
dt1χ(t1)χ(τ − t1)
(S 13)
Using the expression of the impulse response χ(t) given above, one finally obtains for the autocorrelation of :
(cid:104)(0)(τ )(cid:105) = 4
(cid:18) kBT
(cid:19)2(cid:16)
1 + e−ΓMt(cid:17)
M Ω2
M
.
(S 14)
Last, using that S ϕ ϕ[ω] = ω2Sϕϕ[ω], Eqs. S 9 and S 14 lead to the very simple expression for the phase noise:
Sϕϕ[ω] =
ΓM
ω2 .
(S 15)
The phase noise of a free-running, thermally driven mechanical resonator is hence entirely determined by and
proportional to its dissipation rate, which is a well known result. Note however that importantly, this does not
depend on the temperature.
1.2 Feedback driven oscillator at thermal equilibrium
It is straight to show that the expression S 15 extends to the case of a feedback driven oscillator at thermal equi-
librium: Indeed, the effect of linear dissipative feedback is to change the susceptibility to an effective susceptibility
χfb[ω] with the linewidth ΓM being replaced by an effective linewidth Γfb which is an affine function of feedback
gain. Noting that the thermal force is unchanged by feedback, and assuming that the feedback noise is negligible,
the phase noise of the feedback driven resonator is obtained by deriving the above analysis with replacing ΓM by
Γfb, which leads to:
Sfb
(S 16)
Thereby, positive dissipative strong feedback (Γeff (cid:28) ΓM) enables considerable reduction of the phase noise of the
resonator. While this result is somehow similar to the situation of an externally driven resonator as we will see
in the next section, the phase noise decrease is limited to the stability of the external reference, while feedback is
self-referenced. The experimental performance of the feedback technique will therefore mostly rely on the ability
to design a low-noise feedback circuit.
ϕϕ[ω] =
Γfb
ω2 .
1.3 Externally driven resonator
To do so, we start back with Eq. S 2
We now turn to the case of an externally driven mechanical resonator. We further assume that the oscillator is
resonantly driven using a coherent amplitude (cid:104)X 2
M)1/2. As a consequence, since X1 has been
arbitrarily defined as being the phase reference (see Fig. S1), its (random) thermal component can be neglected
osc(cid:105)1/2). The motion phase imprecision resulting from the thermal
Xth,1 (X1(t) = (cid:104)X 2
fluctuations Xth,2 of the quadrature X2 is thereby given by:
osc(cid:105)1/2 + Xth,1(t) (cid:39) (cid:104)X 2
osc(cid:105)1/2 (cid:29) (kBT /M Ω2
The phase noise associated to an externally driven state at thermal equilibrium therefore follows immediately from
Eq. S 17:
ϕ(t) (cid:39) Xth,2(t)
osc(cid:105)1/2
(cid:104)X 2
,
(S 17)
Sosc
ϕϕ [ω] =
Sth
XX[ω]
(cid:104)X 2
osc(cid:105) ,
(S 18)
which is a well known result [1, 2]: As increasing the external drive amplitude1, the thermal induced phase noise
decreases. However, as noted above, the frequency stability limit then relies on that of the external reference.
Reaching better stability performance will be thereby preferably possible using the positive feedback technique as
announced above.
1We assume the mechanical motion to remain linear.
13
osc(cid:105) = (cid:104)X 2
Figure S2: Phase and frequency stability of a mechanical resonator at thermodynamic equilibrium. (a) Schematic
of the displacement spectrum of a thermally-driven oscillator (blue), feedback driven resonator with (cid:104)X 2
th(cid:105),
th(cid:105). (b) Corresponding phase noise spectra. (c) Phase
and externally driven resonator (brown) with (cid:104)X 2
noise of an externally driven high-Q mechanical oscillator as a function of the Fourier frequency and mechanical
damping-rate (normalized to an arbitrary damping unit Γ0).
(d) Phase noise of an externally driven high-Q
mechanical oscillator as a function of the Fourier frequency and driving power. In both (c) and (d), the phase
noise decreases towards darker regions. (c) and (d) show that increasing the external drive or mechanical quality
factor lead to similar improvement for the phase noise performance. (e) Allan deviation of a thermally-driven
oscillator (blue), feedback driven resonator with (cid:104)X 2
th(cid:105), and externally driven resonator (brown) with
th(cid:105). (f) Allan deviation for an externally driven resonator as a function of gate time and mechanical
(cid:104)X 2
damping rate (normalized to an arbitrary damping unit Γ0). The Allan deviation decreases towards the darker
regions. Note the contours which tend to be parallel at higher damping rates, which reflects the fact that the
frequency stability becomes independent of damping rate ΓM at higher gate times.
fb(cid:105) = (cid:104)X 2
osc(cid:105) = (cid:104)X 2
fb(cid:105) = (cid:104)X 2
2 Thermodynamic limit of frequency stability
In this section, we first establish the mathematical connection between phase noise and frequency stability. We
then derive the analytical expression of the Allan deviation corresponding to the three cases treated above.
2.1 Allan variance as a function of phase noise
Here we establish the mathematical relationship between the Allan variance and the phase noise. For a given gate
time τ , the Allan variance σ(τ ) defines as:
σ2(τ ) =
=
1
2f 2
M
1
2f 2
M
lim
n→∞
lim
n→∞
(cid:17)2(cid:41)
(cid:16) ¯fk − ¯fk−1
(cid:32)
(k+1)τ(cid:90)
n − 1
1
(cid:40)
1
n − 1
n(cid:88)
n(cid:88)
k=2
k=2
(cid:33)2
,
dtf (t)
kτ(cid:90)
(k−1)τ
(S 19)
dtf (t) − 1
τ
1
τ
kτ
14
1
1
n − 1
(cid:32) (cid:90)(cid:90)
n(cid:88)
n(cid:88)
k=2
(cid:32) (cid:90)(cid:90)
(cid:90)(cid:90)
[0,τ ]2
−2
[0,τ ]2
σ2(τ ) =
1
f 2
Mτ 2
[0,τ ]2
(cid:90)(cid:90)
dtdt(cid:48)f (t + kτ )f (t(cid:48) + (k − 1)τ )
[0,τ ]2
(cid:33) .
dtdt(cid:48)(cid:16)(cid:104)f (t)f (t(cid:48))(cid:105) − (cid:104)f (t)f (t(cid:48) − τ )(cid:105)(cid:17)
(cid:90)(cid:90)
where fM = ΩM/2π denotes the resonator's mechanical resonance frequency. expanding the squared parenthesis in
the above equation, one obtains:
(cid:90)(cid:90)
(cid:90)(cid:90)
σ2(τ ) =
1
Mτ 2 lim
n→∞
2f 2
n − 1
dtdt(cid:48)f (t)f (t(cid:48)) +
dtdt(cid:48)f (t)f (t(cid:48)) − 2
dtdt(cid:48)f (t)f (t(cid:48))
k=2
Dk+1,k+1
Dk,k
Dk+1,k
(S 20)
where Dj1,j2 = [(j1 − 1)τ, j1τ ] × [(j2 − 1), j2τ ]. The latter equation can be rewritten using fixed integration's
boundaries as follows:
σ2(τ ) =
1
Mτ 2 lim
n→∞
2f 2
dtdt(cid:48)f (t + kτ )f (t(cid:48) + kτ ) +
dtdt(cid:48)f (t + (k − 1)τ )f (t(cid:48) + (k − 1)τ )
(cid:33) ,
(S 21)
Swapping the statistical and temporal summations and using the ergodic assumption, one obtains:
.
(S 22)
To express the Allan variance in terms of frequency noise Sff [Ω], we use the Wiener-Khintchin theorem which
enables expressing the autocorrelation functions featured in the above expression as the inverse Fourier Transform
of the spectrum, (cid:104)f (t)f (t(cid:48))(cid:105) = 1
dΩSff [Ω]eiΩ(t−t(cid:48)). The latter equation reads therefore:
+∞(cid:82)
2π
−∞
+∞(cid:90)
dΩSff [Ω]eiΩ(t(cid:48)−t)(cid:16)
1 − e−iΩτ(cid:17)
.
(S 23)
σ2(τ ) =
1
2πf 2
Mτ 2
dtdt(cid:48)
[0,τ ]2
−∞
Fubini's theorem enables swapping the time and frequency integration to finally have:
σ2(τ ) =
1
πf 2
Mτ 2
dΩ
Sff [Ω]
Ω2
(cid:16)
1 − e−iΩτ(cid:17)(cid:16)
(cid:17)
1 − cos(Ωτ )
.
(S 24)
(cid:90)(cid:90)
+∞(cid:90)
−∞
Using that the imaginary part of the latter equation cancels, that the frequency spectrum is a pair function
Sff [Ω] = Sff [−Ω], and that the frequency noise Sφφ[Ω] = Sff [Ω]/Ω2, the Allan variance finally reads:
(cid:18) 2
ΩMτ
(cid:19)2
+∞(cid:90)
dΩSϕϕ[Ω] sin4(cid:16) Ωτ
(cid:17)
2
0
σ2(τ ) =
2
π
.
(S 25)
Though being similar to what can be found in Cleland et al [?, ?], this expression is a factor of π lower, which is of
great importance: as an example, when the first one leads to the conclusion that a system is at the thermal limit,
we find that it is actually still a factor > 3 above.
2.2 Frequency stability of a mechanical resonator at thermodynamic equilibrium
Using the result given by Eq. S 25, we are now able to determine the frequency stability associated to the cases
treated in sections 1.1, 1.2 and section 1.3.
15
Free-running thermally driven oscillator Using Eqs. S 15 and S 25, one obtains for the frequency Allan
deviation:
σ2(τ ) =
1
QMΩMτ
,
(S 26)
with QM = ΩM/ΓM denoting the mechanical quality factor of the resonator. Eq. S 26 shows that the stability
increases with mechanical quality factor, gate time, and frequency: Therefore, besides being of high interest for
purposes such as mass sensing [14, 8], high-frequency, high-Q mechanical resonators are extremely useful for absolute
stability applications such as time and frequency control [11].
Feedback driven oscillator at thermal equilibrium As suggested by the very similar mathematical expres-
sion of the phase noise in the free-running and feedback driven configurations, the expression of the thermal limited
frequency stability in the latter case takes the same form as Eq. S 26:
σ2(τ ) =
1
QfbΩMτ
,
(S 27)
with Qfb = ΩM/Γfb the effective mechanical quality factor2. We note that Eq. S 27 can be expressed differently, as
a function of the feedback driven motion variance (cid:104)X 2
th,fb(cid:105):
(cid:104)X 2
th(cid:105)
th,fb(cid:105) ×
(cid:104)X 2
σ2
fb(τ ) =
1
QMΩMτ
,
(S 28)
th(cid:105)/(cid:104)X 2
where we used that Γfb/ΓM = (cid:104)X 2
th,fb(cid:105) [26]. This expression identifies to the one we derived in the next
paragraph in the case of an externally driven oscillator at short gate times (τ ≤ 1/ΓM), with the important difference
that it applies at all gate times (in the limit τ (cid:29) 1/ΩM). Again, the important difference with external driving is
that this stability is no longer limited to the one of the external reference, which is found to be routinely on the
order of a few ppb (10−9) at second-scale for quartz oscillators. Reaching higher stability that become comparable
to atomic clocks' (i.e. below 10−10) will therefore rather require the use of positive dissipative feedback.
Externally driven resonator
driven resonator at thermal equilibrium is obtained using Eqs. S 18 and S 25, with Sth
In the limit of a coherent drive (cid:104)X 2
osc(cid:105) (cid:29) (cid:104)X 2
th(cid:105), frequency stability of an externally
XX[ω] being given by [?]:
XX[ω] (cid:39) χ[ΩM + ω]2ST
Sth
F ,
(S 29)
We note that in MEMS-NEMS literature, this calculation is mostly achieved using a truncated expression of the
XX[ω (cid:29) ΓM]). This is probably a
phase noise, with the slowest noise component being neglected (Sth
technical legacy: MEMS technology first provided high-Q low-frequency oscillators, with very long mechanical
coherence times 1/ΓM, easily on the order of a few tens of seconds, along which technical limitations (e.g. thermal
drifts, pressure fluctuations etc...) are the prominent sources of frequency noise. However, the recent development
of high-frequency NEMS has led to low-noise, fast decay rate oscillators, the former truncation being henceforth
obsolete. We thereby compute the integral in Eq. S 25 without further assumption, and find:
XX[ω] (cid:39) Sth
σ2(τ ) =
=
osc(cid:105) × 3 + exp(−ΓMτ ) − 4 exp(−ΓMτ /2)
(ΩMτ )2
kBT
M(cid:104)X 2
M Ω2
(cid:104)X 2
th(cid:105)
osc(cid:105) × H(t).
(cid:104)X 2
(S 30)
Eq.S 30 shows that the apparent frequency stability depends of the inverse ratio between the coherent drive and
the thermal variance, along the thermal equivalent phase noise dependance. The function H(t) describes the gate-
time dependance, and features essentially 2 regimes. For short gate-times (τ (cid:28) 1/ΓM), we have H(τ ) (cid:39) 1/QMΩMτ ,
and the Allan variance identifies to the result obtained when neglecting the noise's slow components. In this case,
one sees that a high QM is favorable to lower measurement imprecision, along the usual optimization discussions.
As already mentioned above, we also note that this asymptotic expression is identical to the effective frequency
stability previously determined in the case of the feedback driven resonator, with (cid:104)X 2
osc(cid:105) being replaced by (cid:104)X 2
fb(cid:105),
the use of feedback being though preferable as explained before.
2We assume the feedback mechanism to be purely dissipative, such that it does not induce any change in the mechanical resonance
frequency.
16
On the other hand, for long gate times, Eq.S 30 leads to H(t) (cid:39) 3/Ω2
Mτ 2: The thermally-limited Allan variance
no longer depends on the mechanical quality factor, and decreases with the square power of τ and with the
fourth power of the mechanical resonance frequency. This 1/τ 2 convergence behavior can be understood since
averaging over gate-time greater than τ (cid:29) 1/ΓM means that two consecutive averaged realizations of the frequency
measurement are independent due to the random nature of thermal noise, in contrast to the short gate-time case
where these two measurements are related via the mechanical coherence time. This result also pleads for developing
high frequency oscillators [8, 14] as highly accurate frequency references, even disregarding their mechanical quality
factor, which should be kept high enough only for readout constraints3.
3The mechanical quality factor has to be such that the thermal noise can be resolved, since the frequency measurement imprecision
will be due to detection background otherwise
17
|
1610.03742 | 1 | 1610 | 2016-10-11T10:39:00 | Helicoidal Graphene Nanoribbons: Chiraltronics | [
"cond-mat.mes-hall",
"quant-ph"
] | We present a calculation of the effective geometry-induced quantum potential for the carriers in graphene shaped as a helicoidal nanoribbon. In this geometry the twist of the nanoribbon plays the role of an effective transverse electric field in graphene and this is reminiscent of the Hall effect. However, this effective electric field has a different sign for the two iso-spin states and translates into a mechanism to separate the two chiral species on the opposing rims of the nanoribbon. Iso-spin transitions are expected with the emission or absorption of microwave radiation which could be adjusted to be in the THz region. | cond-mat.mes-hall | cond-mat | Helicoidal Graphene Nanoribbons: Chiraltronics
Victor Atanasov
Department of Condensed Matter Physics,
Sofia University, 5 blvd. J. Bourchier,
1164 Sofia, Bulgaria∗
Theoretical Division and Center for Nonlinear Studies,
Los Alamos National Laboratory, Los Alamos, NM 87545 USA†
Avadh Saxena
We present a calculation of the effective geometry-induced quantum potential for the carriers in
graphene shaped as a helicoidal nanoribbon. In this geometry the twist of the nanoribbon plays
the role of an effective transverse electric field in graphene and this is reminiscent of the Hall effect.
However, this effective electric field has a different sign for the two iso-spin states and translates into
a mechanism to separate the two chiral species on the opposing rims of the nanoribbon. Iso-spin
transitions are expected with the emission or absorption of microwave radiation which could be
adjusted to be in the THz region.
PACS numbers: 02.40.-k, 03.65.Pm, 73.22.Pr, 73.43.Cd
Introduction. The synergy of geometry, topology and
electronic, magnetic or optical properties of materials is
a prevalent theme in physics, especially when its manifes-
tations are unusual and lead to unexpected effects. Note
that helical nanoribbons provide a fertile ground for such
effects. Both the helicoid (a minimal surface) and heli-
cal nanoribbons are ubiquitous in nature; biomolecules
in particular1–4. A helicoid has two chiralities (Fig.
1). Solid state examples include screw dislocations in
smectic A liquid crystals5, certain ferroelectric liquid
crystals6, recently synthesized graphene nanoribbons7–9,
helicoids10 and spirals11,12. Various physical effects such
as electromechanics in graphene nanoribbons and spirals
including geometric ones can be found in [13–16].
Novel electronic phenomena in graphene nanoribbons
are the main focus here. In this context, our goal is to an-
swer the following question: what kind of effective quan-
tum potential do the carriers experience on a graphene
helicoid or a helical nanoribbon due to its geometry (i.e.,
curvature and twist)? Our main finding is that the twist
ω serves as an effective electric field acting on the chiral
electrons of graphene with a non-vanishing angular mo-
mentum state. This is reminiscent of the quantum Hall
effect; only here it is geometrically induced. Further-
more, this electric field reverses polarity when the iso-
spin (defined below with regard to the two components
of a Dirac spinor) is changed leading to a separation of
the iso-spin states of the carriers on the opposing rims of
the nanoribbon.
The helicoid geometry creates a pseudo-electric field
and this unexpected result is intriguing in view of the typ-
ical effect distortion has on graphene honeycomb lattice,
that is to induce a pseudo-magnetic field, which leads to
the valley-dependent edge states17. One possible reason
for not observing pseudo-magnetic fields here is that the
helicoid is a minimal surface (the mean curvature is zero
everywhere), that is, it is curved but at the same time
minimizes the surface energy, therefore not straining the
FIG. 1: Two helicoidal nanoribbons with different chirali-
ties: (a) ω > 0 and (b) ω < 0. Vertical axis is along x and the
transverse direction ξ is across the nanoribbons. Here ξ0 is
the inner radius and D is the outer radius. The two graphene
iso-spin states (color coded as red and blue) collect on op-
posing rims (separated in space). The respective rims are
exchanged when the chirality of the helicoid is reversed. The
same exchange takes place when the direction of propagation
along the helicoid changes, that is m → −m.
underlying lattice.
We expect our results to lead to new experiments on
graphene nanoribbons and other related Dirac twisted
materials where the predicted effect can be verified and
explored in the light of spintronics, literally in the case of
graphene: "chiraltronics" ([18] and references therein).
Note that we treat the nanoribbon as a continuum
object without taking into account any discreteness of
the underlying honeycomb lattice,
i.e, we consider a
Dirac equation rather than a tight-binding model. Thus
are discussion is independent of whether the underlying
graphene lattice is parallel or perpendicular to the chi-
ral axis, keeping in view the experimental observations
of Ref. 10. We also assume that the helicoid remains a
6
1
0
2
t
c
O
1
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
2
4
7
3
0
.
0
1
6
1
:
v
i
X
r
a
minimal surface without any distortion or strain. More-
over, we assume the stability of the helicoid geometry
and do not consider any instability issues that may arise
experimentally.
Helicoid geometry. To elaborate on the geometry of
the helicoidal graphene nanoribbon we consider a strip
whose inner and outer edges follow a helix around the
x-axis (see Fig. 1 with ξ0 = 0). The represented surface
is a helicoid and is described by the following equation:
(cid:126)r = x (cid:126)ex + ξ [cos(ωx) (cid:126)ey + sin(ωx) (cid:126)ez],
(1)
2
where ω = 2πn
L , L is the total length of the strip and n
is the number of 2π-twists. Here ((cid:126)ex, (cid:126)ey, (cid:126)ez) is the usual
orthonormal triad in R3 and ξ ∈ [0, D], where D is the
width of the strip. Let d(cid:126)r be the line element and the
metric is encoded in
2dξ2,
1dx2 + h2
d(cid:126)r2 = (1 + ω2ξ2)dx2 + dξ2 = h2
where h1 = h1(ξ) =(cid:112)1 + ω2ξ2 and h2 = 1 are the Lam´e
coefficients of the induced metric (from R3) on the strip.
Next, we add a comment on the helicoidal nanoribbon,
that is a strip defined for ξ ∈ [ξ0, D] (see Fig. 1). All
the conclusions still hold true and all of the results can
be translated using the change of variables
ξ = ξ0 + s(D − ξ0),
s ∈ [0, 1].
Here s is a dimensionless variable and one easily sees that
for ξ0 → 0 we again obtain the helicoid.
Effective geometric potential. In order to answer the
question posed above, here we study the helicoidal sur-
face to gain a broader understanding of the interaction
between Dirac particles and curvature and the resulting
possible physical effects. The properties of free electrons
on this geometry have been considered before19–21 in the
case of Schrodinger materials. The results of this paper
are based on the Dirac equation for a confined quantum
particle on a sub-manifold of R3. Following Refs.
[22–
24] an effective potential appears in the two dimensional
Dirac equation which in this geometry has the following
form:
−k+
ikx√
1+ω2ξ2
+ i∂ξ
ikx√
− i∂ξ
1+ω2ξ2
−k−
(cid:18) χA
χB
(cid:19)
k± = ±E/vF ,
(3)
where kx is the partial momentum in x-direction. For
more information on the derivation, refer to the Ap-
pendix as well as Ref. [25].
Let us consider here the azimuthal angle around the
x axis: ωx and the angular momentum along this axis
(cylindrical symmetry):
Lx = − i
ω
∂
∂x
.
(4)
This operator has the same eigenfunctions Lxφ(x) =
mφ(x) as the Hamiltonian since they commute. The
ξextr =
1
ω
FIG. 2: The potential acting on each of the iso-spin states
as a function of the width of the helicoid ξ. Here ω > 0.
Note that the potentials have a maximum and then fall off
∝ 1/ξ2. The extremum for m = 1 state is reached for
√
8). For ξ (cid:29) ξextr the iso-spin separation scales
ξextr = 1/(ω
as ∆U (ξ (cid:29) ξextr) ≈ 2m
ξ2 .
corresponding eigenvalues are m. We conclude that the
momentum kx is quantized
kx = mω,
m ∈ Z.
(5)
This is not surprising because of the periodicity of the
wave function along x. Note that the value of the angu-
lar momentum quantum number determines the direction
the carriers take along the x axis either upward m > 0 or
downward m < 0. This situation is reversed for a helicoid
with opposite chirality (Fig. 1).
Now we obtain for the first and second components
of the spinor, that is the iso-spin states, the following
governing effective Schrodinger equations:
− ∂2
−∂2
ξ χA + UA(x)χA = −k2
ξ χB + UB(x)χB = −k2
ξ χA,
ξ χB,
ξ = k+k− = −E2/(vF )2,
k2
(6)
(7)
(8)
k2
x
1 + ω2ξ2 +
1 + ω2ξ2 −
k2
x
UA = W 2
m − W (cid:48)
m =
kxω2
(1 + ω2ξ2)3/2
ξ,
(9)
kxω2
m + W (cid:48)
UB = W 2
m =
Here Wm = kx/(cid:112)1 + ω2ξ2. These potentials are pseudo-
(1 + ω2ξ2)3/2
ξ. (10)
binding and are depicted in Fig. 2. Note the qualitative
behavior after the extremal point is reached for
(cid:113)
1 + m2 −(cid:112)m4 − 3m2
(cid:112)2(1 − m2)
,
(11)
= 0,(2)
where the corresponding potentials are
provided m (cid:54)= 1. In the case m = 1 the extremum is
reached for ξextr = 1/(ω
√
8), that is W < L/(4
Suppose the width of the nanoribbon W is smaller than
1/(ω
2πn), then we can approxi-
mate the potential and restrict the expansion to the first
order terms
8).
√
√
UA ≈ k2
x + kxω2ξ, UB ≈ k2
x − kxω2ξ,
then the governing effective equations become
ξ χA +(cid:0)k2 + kxω2ξ(cid:1) χA = 0,
ξ χB +(cid:0)k2 − kxω2ξ(cid:1) χB = 0,
− ∂2
−∂2
k2
x + k2
ξ = k2.
(12)
(13)
(14)
(15)
Note that the geometry induced potential acting on the
two different iso-spin states is similar to the application
of a constant electric field E, thus reminiscent of the Hall
effect:
UA ∝ eEξ, UB ∝ −eEξ,
(16)
where E = kxω2/e, with its sign being different for the
different chiral states. Here e is the electron charge.
Therefore, E separates them on the opposing rims of the
helicoidal nanoribbon. It is exactly this observation that
motivates us to assume a mechanism of separation of chi-
ral states in graphene as the basis for a potential new
branch of spintronics, namely chiraltronics.
k2
x
kxω2
These potentials are a sum of two contributions, an
almost constant repulsive part (which pushes the carriers
to the outer rim):
1+ω2ξ2 ≈ m2ω2 and a variable part
(1+ω2ξ2)3/2 ξ ≈ ω3mξ which is repulsive or attractive as
a function of the angular momentum quantum number m
but more importantly, given m ≥ 0 attractive for iso-spin
A (collects on the inner edge) and repulsive for iso-spin
B (collects on the outer edge), see (12).
The action of the first part ∝ m2ω2 qualifies it as a cen-
trifugal potential. It pushes a particle to the boundary
of the strip. Physically, one may understand the behav-
ior described above using the uncertainty principle: for
greater ξ a particle on the strip will have more available
space along the corresponding helix and therefore the cor-
responding momentum (energy) will be smaller than for
a particle closer to the central axis.
Since the behavior of the variable part of the poten-
tial UB(ξ) for a particle with m ≥ 0 [UA(ξ) for m ≤ 0]
qualifies it as a quantum anti-centrifugal one,
it con-
centrates the corresponding iso-spin carriers around the
central axis for a helicoid (or the inner rim for a heli-
coidal nanoribbon). Such anti-centrifugal quantum po-
tentials have been considered for Schrodinger materials
previously26.
We note that the separability of the quantum dynamics
along x and ξ directions with different potentials points
to the existence of an effective mass anisotropy for the
chiral electrons on the graphene helicoidal surface.
3
FIG. 3: Provided the nanoribbon is small enough, so that
ξ < ξextr, the potential acting on each of the iso-spin states
as a function of the width of the helicoid scales linearly with
ξ. Note that the difference between the potentials acting on
the two iso-spin states is ∆U (ξ < ξextr) ≈ 2mω3ξ. The
frequency of the expected transition is in the THz region (for
micron-sized ribbons). See text for further details.
√
Experimental implications. A number of experimental
consequences can be expected. We begin with the "thin
strip" case, literally the case in which the width W <
2πn). The pseudo-binding potential (see Fig. 3)
L/(4
would lead to a two-metastable-states problem and an os-
cillation between the iso-spin states should be expected.
The helicoidal graphene nanoribbon should exhibit an
absorption line at frequency ν ≈ vF
connected with the change (positive chirality helicoid
ω > 0) of iso-spin from B to A. Using the restriction
on the width of the nanoribbon the frequency turns out
to be
(cid:113)mn32πW/L3
(cid:115) m
√
2
2
ν ≈ n vF
L
,
(17)
which is determined by the geometric and material prop-
erties only. In an attempt to evaluate its order of magni-
tude we put L ≈ 10−6 m (∼micron) and vF ≈ 106 m/s to
obtain ν ≈ 1012 Hz well into the THz region. The reverse
process is also possible, that is emission in the THz. The
change of iso-spin is in this case from A to B. Therefore
we might expect a continuous emission, provided we feed
the positive chirality helicoid with a current in the inner
rim and extract the current (drain it) from the outer rim
on the other end. The iso-spin current has to change and
therefore emit THz radiation via a standard QED vertex.
See the plot of the potential in Fig. 3.
Another experimental effect stems from the form of
the geometric potential along the width ξ of the helicoid.
The potential in (2) is V = ikxσ1/(cid:112)1 + ω2ξ2. Here we
follow the formalism in Ref.
[27]. The matrix element
of this potential in the Born approximation gives non-
are defined in terms of the metric on the strip
0
0
0 −(1 + ω2ξ2) 0
−1
0
0
gµν =
(22)
Note, ηab = ηab = diag(1,−1,−1) is the choice of the
Minkowski metric. Now we define the trei-bein fields eµ
a :
F
v2
,
1
0 0
vF
0 0 0
0 0 0
et
a =
.
,
0 0 0
0 0 0
0 0 −1
0
1√
1+ω2ξ2
0
0
0
0
eξ
a =
0
0 −
0
ex
a =
4
(23)
(24)
and eµa = gµνeν
a γa matrices algebra fulfills
γaγb + γbγa = 2ηabI and trγa = 0. Upon a straightfor-
ward check, the following choice is found to be correct
a. The γµ = eµ
γt = σ3,
γx = iσ1,
γξ = iσ2,
(25)
where σj are the Pauli spin matrices. The curvilinear
γµ's (19) then are
γt =
1
vF
σ3,
γx = −
iσ1(cid:112)1 + ω2ξ2
γξ = −iσ2.
,
(26)
x = ω2ξ
1+ω2ξ2 and Γxx
x =
The non-zero Christoffel symbols components are Γxξ
ξ = −ω2ξ. As a result, the spin
Γξx
connection Γµ can be computed from (20) which turns
out to be vanishing: Γt = 0, Γx = 0 and Γξ = 0. Putting
the corresponding terms in the Dirac equation (18) and
looking for stationary states with energy E, Ψ = e− i Etψ,
we obtain
(cid:32)
vF(cid:112)1 + ω2ξ2
(cid:33)
σ1∂x + vF σ2∂ξ
ψ = Eσ3ψ(x, ξ). (27)
vanishing probability w(θ) ∝ sin2(θ/2), where θ is the
scattering angle, for backward scattering. We conclude
that the conductivity of the nanoribbon along the width,
that is along the rim-to-rim channel is hindered. We
believe, this is an additional confirmation of the iso-spin
transition the carriers necessarily undertake to populate
the opposing rim.
Conclusion. Our main findings can be summarized as
follows: the twist ω pushes the graphene carriers with
iso-spin A and m ≥ 0 (m ≤ 0) towards the outer (inner)
edge of the nanoribbon, respectively iso-spin B for m ≥ 0
(m ≤ 0) towards the inner (outer) edge of the nanorib-
bon, and effectively separates chiral species on the oppos-
ing rims of the helicoid and induces transitions at THz
frequencies. These results are quite distinct from the
ones in the case of twisted Schrodinger materials with
a scalar wave function and a different geometry induced
effective potential21. We also predicted an effective mass
anisotropy for chiral electrons on the helicoid. We expect
our results to motivate new low temperature experiments
(in order to restrict to low m, that is non-dominant ac-
tion of the repulsive part of the potential) on twisted
graphene nanoribbons in light of the emerging opportu-
nity to separate chiral states, explore chiraltronic appli-
cations and possibly create new microwave devices. If the
helicoid were elastically deformable then the coupling of
chiral electrons to the strain field would possibly lead to
a pseudo-magnetic field (in addition to a pseudo-electric
field) among other interesting effects.
In our analysis we have neglected any effects that may
arise due to the underlying lattice discreteness and dis-
tortion (strain) in a real graphene helicoidal nanoribbon.
It would be worthwhile to study these effects numerically
along with the potential stability of the considered geom-
etry including the effects of van der Waals adhesion, etc.
This work was supported in part by the U.S. Depart-
ment of Energy.
Appendix. The covariant approach for writing the
Dirac equation on the curved surface of graphene is the
following
(cid:16)
(cid:17)
ivF γµ Dµ
Ψ = 0,
(18)
where the curvilinear matrices are
γµ = eµ
a γa
and Dµ = ∂µ − Γµ. Here
(cid:0)∂µeν
b + Γµλ
(cid:1) γaγb
νeλ
b
Γµ =
1
4
eνa
(19)
(20)
is the spin connection. The Christoffel symbols are de-
fined as: Γµλ
trei-bein fields28
2 (∂µgλξ + ∂λgµξ − ∂ξgµλ) gξν. The
ν = 1
(cid:19)
(cid:18) ψA
ψB
The equations for the iso-spin components after the
ansatz
ψ(x, ξ) =
, ψA,B(x, ξ) = eikx1,x2 x χA,B(ξ) (28)
are(cid:18)
where Wm(ξ) = kx/(cid:112)1 + ω2ξ2 with the additional con-
(cid:19)(cid:18) χA
−i∂ξ − iWm(ξ)
i∂ξ − iWm(ξ)
= 0, (29)
(cid:19)
k−
χB
k+
gµνeµ
a eν
b = ηab,
ηabeµ
a eν
b = gµν
(21)
dition kx1 = kx2 = kx.
5
∗ Electronic address: vatanaso@phys.uni-sofia.bg
† Electronic address: avadh@lanl.gov
1 C. W. G. Fishwick, A. J. Beevers, L. M. Carrick, C. D.
Whitehouse, A. Aggeli, and N. Boden, Nano Lett. 3, 1475
(2003).
2 J. Crusats, J. Claret, I. Diez-Perez, Z. El-Hachemi, H.
Garcia-Ortega, R. Rubires, F. Sagues, and J. M. Ribo,
Chem. Commun. 13, 1588 (2003). DOI: 10.1039/b303273f
3 O-Y. Zhong-can and L. Ji-xing, Phys. Rev. Lett. 65, 1679
(1990); Phys. Rev. A 43, 6826 (1991).
4 J. M. Garcia Ruiz, A. Carnerup, A. G. Christy, N. J. Wel-
Galvo, and F. Sato, J. Chem. Phys. 128, 164719 (2008).
15 Z. Qiao, S. A. Yang, B. Wang, Y. Yao, and Q. Niu, Phys.
Rev. B 84, 035431 (2011).
16 J. Klinovaja, G. J. Ferreira, and D. Loss, Phys. Rev. B 86,
235416 (2012).
17 D.-B. Zhang, G. Seifert, and K. Chang, Phys. Rev. Lett.
112, 096805 (2014).
18 W. Han, R. K. Kawakami, M. Gmitra, and J. Fabian, Na-
ture Nanotech. 9, 794 (2014).
19 R.C.T. da Costa, Phys. Rev. A 23, 1982 (1981).
20 R. Dandoloff and T.T. Truong, Phys.Lett. A 325, 233
ham, and S. T. Hyde, Astrobiology 2, 353 (2002).
(2004).
5 R. D. Kamien and T. C. Lubensky, Phys. Rev. Lett. 82,
21 V. Atanasov, R. Dandoloff, and A. Saxena, Phys. Rev. B
2892 (1999).
6 D. M. Walba, E. Korblova, R. Shao, J. E. Maclennan, D.
R. Link, M. A. Glaser, and N. A. Clark, Science 288, 2181
(2000).
7 N. Mohanty, D. Moore, Z. Xu, T. S. Sreeprasad, A. Na-
garaja, A. A. Rodriguez, and V. Berry, Nature Commun.
3, 844 (2012).
8 D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R.
Lomeda, A. Dimiev, B. K. Price, and J. M. Tour, Nature
458, 872 (2009);
9 L. Jiao, L. Zhang, X. Wang, G. Diankov, and H. Dai, Na-
ture 458, 877 (2009).
10 T.W. Chamberlain, J. Biskupek, G.A. Rance, A. Chuvilin,
T.J. Alexander, E. Bichoutskaia, U. Kaiser, and A. N.
Khlobystov, ACS Nano 6, 3943 (2012).
11 X. Zhang and M. Zhao, Scientific Reports 4, No. 5699
(2014). DOI: 10.1038/srep05699
12 S. M. Avdoshenko, P. Koskinen, H. Sevincli, A. A. Popov,
and C. G. Rocha, Scientific Reports 3, No. 1632 (2013).
DOI: 10.1038/srep01632
13 P. Koskinen, Appl. Phys. Lett. 99, 013105 (2011); T. Ko-
rhonen and P. Koskinen, AIP Advances 4, 127125 (2014).
14 E. W. S. Caetano, V. N. Freire, S. G. dos Santos, D. S.
79, 033404 (2009).
22 M. Burgess and B. Jensen, Phys. Rev. A 48, 1861 (1993).
23 V. Atanasov and A. Saxena, Phys. Rev. B 81, 205409
(2010); Y. N. Joglekar and A. Saxena, Phys. Rev. B 80,
153405 (2009).
24 V. Atanasov and A. Saxena, J. Phys.: Condens. Matter
23, 175301 (2011).
25 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M.
I. Katsnelson, I. V. Grigorieva, S. V. Dubonos, and A. A.
Firsov, Nature 438, 197 (2005); Maria A. H. Vozmediano,
Nature Phys. 7, 671 (2011); F. Guinea, M.A.H. Vozmedi-
ano, M.P. Lopez-Sancho, and J. Gonzalez, Adv. Mater.,
23 5324 (2011); P. San-Jose, J. Gonzalez, and F. Guinea
Phys. Rev. Lett. 106, 045502 (2011).
26 M. A. Cirone, K. Rzazewski , W. P. Schleich , F. Straub,
and J. A. Wheeler, Phys. Rev. A 65, 022101 (2001); V.
Atanasov and R. Dandoloff, Phys. Lett. A 371, 118 (2007).
27 T. Ando, T. Nakanishi and R. Saito, J. Phys. Soc. Jpn.
67, 2857 (1998).
28 D. J. Struik, Lectures on Classical Differential Geometry,
Second Ed. (Dover, Reading, MA, 1988).
|
1710.01486 | 1 | 1710 | 2017-10-04T07:21:12 | Imaging resonant dissipation from individual atomic defects in graphene | [
"cond-mat.mes-hall"
] | Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phonon emission from individual atomic defects in graphene. The inferred electron-phonon 'cooling power spectrum' exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in modern electronics and engineering dissipation at the nanoscale. | cond-mat.mes-hall | cond-mat | Title: Imaging resonant dissipation from individual atomic defects in graphene
Authors: Dorri Halbertal1*, Moshe Ben Shalom2*, Aviram Uri1, Kousik Bagani1, Alexander Y. Meltzer1, Ido
Marcus1, Yuri Myasoedov1, John Birkbeck2, Leonid S. Levitov3, Andre K. Geim2, Eli Zeldov1*
Affiliations:
1Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.
2National Graphene Institute, The University of Manchester, Booth St. E, Manchester M13 9PL, UK and
the School of Physics and Astronomy, The University of Manchester, Manchester M13 9PL, UK.
3Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
*Correspondence to: dorri.halbertal@weizmann.ac.il (D.H.); moshe.benshalom@manchester.ac.uk
(M.B.); eli.zeldov@weizmann.ac.il (E.Z.).
Abstract
Conversion of electric current into heat involves microscopic processes that operate on nanometer length-
scales and release minute amounts of power. While central to our understanding of the electrical properties
of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning
nano-thermometry with sub-µK sensitivity we visualize and control phonon emission from individual atomic
defects in graphene. The inferred electron-phonon "cooling power spectrum" exhibits sharp peaks when the
Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted
process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define
the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in
modern electronics and engineering dissipation at the nanoscale.
One sentence summary: We visualize and control conversion of electric current into local heat at individual
atomic defects and identify the dominant dissipation pathway in clean graphene.
1
Understanding microscopic mechanisms of momentum and energy dissipation is a central problem in the
fields ranging from condensed matter to particle physics. It is also of keen interest for designing new
approaches to handle, convert, and utilize energy in a bid to address key technological challenges.
Dissipation pathways are particularly intriguing in ultra-pure materials of current interest, such as graphene
(1), because of tight restrictions on the phase space for electron-phonon scattering (2–4). Furthermore,
unlike particle physics where a particular decay process of interest can be "staged" in a collider, in
condensed matter physics we are interested in the processes concealed microscopically within the material.
This, along with the minute power released in such processes, poses a key challenge for experimentally
probing dissipation at the nanoscale. Here we employ a recently-developed ultrasensitive scanning
nanothermometer with sub-µK sensitivity (5), achieved with a superconducting quantum interference device
placed on an extremely sharp tip-SQUID-on-tip-to probe these subtle effects in high-mobility graphene.
Owing to its exceptional cleanness and the two-dimensional nature of its electrons and phonons (1),
graphene is an excellent platform to study electron-phonon relaxation.
Our measurements were performed on exfoliated graphene encapsulated between hexagonal Boron Nitride
(hBN) layers and designed to inject electrons from narrow constrictions into a micron-scale "electron
chamber" (Figs. 1A,B and Section 1 (6)). Transport measurements in such samples routinely show ballistic
signatures over a wide range of temperatures and carrier densities (7–9). Our SQUID-on-tip (10) acts as an
extremely sensitive thermometer (tSOT) (5) with an effective diameter of 33 nm and thermal sensitivity of
510 nK/Hz1/2 at 4.2 K, and provides an image of the local temperature variations 𝛿𝑇(𝑥, 𝑦) upon scanning at a
height ℎ of 10 to 40 nm above the sample surface (as specified). The tip is mounted on a quartz tuning fork
(11) which allows the tSOT to vibrate parallel to the sample surface with a controlled amplitude 𝑥𝑎𝑐~ 2.7 nm
at a frequency of 37 kHz (Sections 2 and 3 (6)). The resulting ac signal, 𝑇𝑎𝑐(𝑥, 𝑦) = 𝑥𝑎𝑐𝜕𝛿𝑇(𝑥, 𝑦)/𝜕𝑥,
renders higher sensitivity imaging (Fig. 1C) by avoiding the low-frequency 1/𝑓 noise of the tSOT. We control
the carrier density in graphene globally by a back-gate bias 𝑉𝑏𝑔 on the Si/SiO2 and locally by applying 𝑉𝑡𝑔
potential to the tSOT (Fig. 1A). Description of sample fabrication and thermal imaging is provided in Methods
(6).
Figure 1C shows the thermal signal 𝑇𝑎𝑐(𝑥, 𝑦) measured while applying a fixed current 𝐼𝑑𝑐 = 3 µA through
two of the constrictions as shown in Figure 1B. The image reveals a complex array of fine rings along the
edges of the heterostructure (5). In addition, three isolated rings are observed in the bulk of graphene
labeled 'A', 'B', and 'C'. The bulk rings are rare and have comparable diameters, in sharp contrast to the rings
at the edges which are dense and display widely varying sizes (Movies S1-2 (6)). We show below that the
rings mark dissipation from single atomic defects positioned at their centers.
Electron-phonon cooling pathways in graphene are uniquely interesting for several reasons. Owing to the
exceptional stiffness of the carbon bonds, scattering by optical phonons in graphene is inefficient below
room temperature. Moreover, the small size of the electron's Fermi surface restricts the phase volume for
scattering by acoustic phonons, blocking the intrinsic electron-lattice relaxation pathway (2–4). However,
theory predict that disorder can significantly ease the electron-phonon scattering (4). Our key finding is that
hot electrons, generated by the applied current, dissipate their energy through a very specific disorder-
induced mechanism: resonant inelastic scattering by local electronic resonances due to individual defects.
2
Each such localized state (LS) mediates cooling through resonant electron scattering, creating an atomic-
scale thermal link between the electronic bath, at an effective hot-electron temperature 𝑇𝑒, and the phonon
bath, at a base temperature 𝑇𝑝 (Section 4 (6)). To characterize this novel thermal link we define the
"electron-phonon heat conductivity of a defect" 𝜅𝑒𝑝(𝜀) which describes the power transferred between the
baths 𝑃𝑒𝑝(𝜀) = 𝜅𝑒𝑝(𝜀)Δ𝑇, where Δ𝑇 = 𝑇𝑒 − 𝑇𝑝 and 𝜀 is the energy relative to the Dirac point. The resulting
cooling power spectrum 𝑃𝑒𝑝(𝜀) (CPS)-the fundamental quantity accessed in our experiment through local
temperature increase 𝛿𝑇(𝜀) ∝ 𝑃𝑒𝑝(𝜀)-is found to peak sharply when the Fermi level 𝜀𝐹 is aligned with the
quasi-bound LS resonant energy 𝜀𝐿𝑆.
Our analysis (Section 4 (6)) of the observed resonances suggests that they originate from quasi-bound states
arising at a carbon vacancy or adatom bonded to a single C atom when its sp2 orbital transforms to an sp3
state (12–15). Such defects are known to produce sharp electronic resonances at energies near the Dirac
point (16, 17). While these defects have been extensively investigated by ab initio calculations and STM
studies (12–19), their prominent role in dissipation has not been anticipated by previous work. The defect-
induced CPS originates from the part of local density of electronic states that mediates electron-phonon
coupling (EP-LDOS, 𝐷𝑒𝑝(𝜀)) – a quantity that was inaccessible hitherto – convoluted with the electron and
phonon Fermi and Bose energy distribution functions (Section 4 (6)). Our measurement results and analysis
indicate that the spectral width of 𝐷𝑒𝑝(𝜀) is much greater than the thermal broadening, in which case the
CPS can be approximated as 𝑃𝑒𝑝(𝜀) ∝ 𝐷𝑒𝑝(𝜀) (Section 4 (6)). This quantity can be probed experimentally as
illustrated schematically in Figs. 2A-C. By parking the tSOT above the defect and varying 𝑉𝑡𝑔 we can induce
local band bending that shifts 𝐷𝑒𝑝(𝜀) with respect to 𝜀𝐹 (Section 6 (6)). The resulting variation in the
measured temperature 𝛿𝑇(𝑉𝑡𝑔) provides a spectroscopic measurement of 𝑃𝑒𝑝(𝜀) ∝ 𝐷𝑒𝑝(𝜀) (Fig. 2B).
Additional information can be obtained by tuning 𝜀𝐹 by the back-gate 𝑉𝑏𝑔, yielding resonant peaks in 𝐷𝑒𝑝(𝜀)
aligned as diagonal lines in the 𝛿𝑇(𝑉𝑡𝑔, 𝑉𝑏𝑔) map as pictured in Fig. 2C. Importantly, in this configuration
phonon emission can be turned on and off by applying a potential on the tSOT tip, representing a new
instance of controlling non-equilibrium dynamics and probing it at the nanoscale.
The experimental 𝛿𝑇(𝑉𝑡𝑔, 𝑉𝑏𝑔) map of defect 'C', presented in Fig. 2D, displays, in agreement with the
discussion above, a sharp resonance (Fig. 2E) along a single diagonal line, which passes closely to the origin in
the 𝑉𝑡𝑔-𝑉𝑏𝑔 plane. This resonance is due to the presence of a LS with a narrow single peak in 𝐷𝑒𝑝(𝜀) (Fig. 2F)
close to the Dirac energy (Section 8 (6)). Such LSs give rise to the sharp thermal rings observed in Fig. 1C as
follows. In order for the LS to cause inelastic electron scattering its energy level 𝐸𝐿𝑆 has to be aligned with
the energy of the impinging electrons, 𝐸𝑒 ≅ 𝐸𝐹. For a given tip potential 𝑉𝑡𝑔 this resonant condition occurs
when the tip is located at a distance 𝑅 from a LS (Fig. 3A, Movie S3 and Section 6 (6)). As a result, each LS
displays a sharp peak in 𝛿𝑇(𝑥, 𝑦) and 𝑇𝑎𝑐(𝑥, 𝑦) along a ring of radius 𝑅 as shown in Fig. 3B, describing the
ring formations in Figs. 1C and 3C.
The variable tip and back gate potentials also provide the spectroscopic means to extract the energy level
and the CPS of the LS. By repeatedly scanning the tSOT along the line crossing the defect and incrementing
𝑉𝑏𝑔 a bell-shaped resonance trace is obtained (Fig. 4A). The shape and polarity of the trace confirms the
electrostatic picture described above (Figs. 4A-C, and Section 7 and Movies S5-S6 (6)), and its asymptotic
3
𝐿𝑆 describes the energy level 𝐸𝐿𝑆 of the LS. Similar information can be obtained by sweeping 𝑉𝑡𝑔 at
value 𝑉𝑏𝑔
various values of 𝑉𝑏𝑔 (Section 7 and Movies S4,S7 (6)).
Our spectroscopic analysis of bulk LSs leads to the following conclusions: a) The LS energy resides slightly
below the Dirac point, 𝜀𝐿𝑆 = 𝐸𝐿𝑆 − 𝐸𝐷 ≅ −22 meV, as derived from the analysis of the resonance lines
(Section 8 (6)). b) The spectral width of the CPS, 𝑃𝑒𝑝(𝜀), is about 13 meV (Fig. 2F and Section 9 (6)). c) No
additional LS energy levels are observed at least 180 meV above and below 𝐸𝐿𝑆. If present, additional
concentric rings and bell-shaped traces would have formed. These are, however, absent for the entire 𝑉𝑏𝑔
and 𝑉𝑡𝑔 applied range of ±10 V (Section 7 (6)). d) This level spacing puts an upper bound on the spatial
extent of the LS of less than 2 nm based on charging energy calculation (Section 7 (6)). e) The sharp energy
level and nanometer spatial extent of the LS closely resemble the characteristic features of atomic defects in
graphene derived by ab-initio calculations (14) and observed by STM (16, 17) in contrast to more extended
non-resonant "puddles" originating from disordered substrate potential (20, 21). f) The resonant character of
the defects and the energy level close to Dirac point are consistent with the sp3 band vacancy model. In
particular, vacancies and monovalent adatoms are known to form LSs at energies comparable with our
measured values (14, 16) (Section 4 (6)) and thus are strong candidates for the observed bulk defects. g) The
bulk defects are extremely rare (we found a total of seven such defects in a number of samples)
corresponding to an estimated average areal density of 2∙105 cm-2 or volume concentration of 5∙10-5 ppm if
originating from the parent graphite. Their spectral properties appear to be the same within our
experimental resolution (Section 8 (6)) pointing to a common chemical or structural origin.
These conclusions are reinforced by examining the LSs along the edges of graphene which display
spectroscopic features very similar to those of the bulk defects, albeit with some notable differences. Figures
4D-E show tSOT line scans along the bottom edge of the sample crossing through numerous LSs, while
increasing 𝑉𝑏𝑔 (Movies S6-7 (6)). Each LS is visible as a bell-shaped trace similar to the ones in Figs. 4A-C,
indicating the same microscopic origin of different LSs. In contrast to LSs in the bulk, the edge LSs are
extremely dense with some adjacent states only about 1 nm apart (Fig. S15E in (6)). This puts an additional
bound on their spatial extent (Section 10 (6)). We ascribe their origin to the carbon dangling bonds near the
edge with high affinity to adatoms and molecules, giving rise to resonance states formed by the resulting sp3
vacancies (12–15). Notably, quite unlike the LSs in the bulk, the edge LSs display vast variations in 𝐸𝐿𝑆 values,
manifested in Figs. 4D-E by the vertical spread of the bell-shaped traces over entire 𝑉𝑏𝑔 range of 20 V. This
translates into 260 meV spread in 𝐸𝐿𝑆, limited by our bias range. Remarkably, we resolve states that are less
than 2 nm apart, but differ in their 𝐸𝐿𝑆 by as much as 160 meV (Section 10 (6)). Such large energy-level
variation may arise from a more diverse chemical origin of the atomic defects at graphene edges as
compared to the native bulk defects. An alternative explanation is Coulomb interaction between the charged
defects. Indeed, charging a LS by one electron would shift the energy of a neighboring LS at a distance of 2
nm by ~240 meV (Section 7 (6)) which agrees with our observations.
The above results suggest that hot electrons lose most of their energy to phonons at the edges of graphene.
To verify this conjecture we measured the bare 𝛿𝑇(𝑥, 𝑦) in the absence of tSOT electrostatic influence (𝑉𝑡𝑔
at a flat-band condition, see Section 5 (6)). Measurement on Sample 2 (Fig. 4F), presented in Fig. 4G, reveals
enhanced temperature along the sample edges as compared to a relatively lower temperature in the sample
4
bulk. Corroborated by numerical simulations (Section 5 (6)), this finding implies that the LSs along the
graphene edges are the dominant source of dissipation at all doping levels reachable in our experiment.
Therefore, the excess phonons, corresponding to the overall temperature rise, are not generated locally in
the graphene bulk. Instead, the phonons are predominantly emitted through inelastic electron scattering by
those LSs at graphene edges that are at resonance at a given 𝑉𝑏𝑔 value (Section 5 (6)). The observed atomic-
scale resonant LSs thus emerge as the leading mechanism of dissipation in clean graphene, each acting as
point-like lighthouse emitting phonons which then propagate ballistically throughout the entire sample.
The observation of sharply localized resonant states and unveiling their role in dissipation should have
significant implications for thermal (22), magnetic (12, 16, 23), chemical (24) and transport (25–28)
properties of graphene. These states are distinct from the extended edge states anticipated for crystalline
graphene edges (23). Further, resonant dissipation is completely different from the conventional non-
resonant picture of electron-phonon coupling (2–4), posing interesting questions for future experimental and
theoretical work. The new dissipation mechanism may affect the edge transport characteristics (29–31) and
explain previous observations of the mean free path being limited by the device size in state-of-the-art
encapsulated graphene (7–9). The resonance states, localized at the edge and in the bulk, thus emerge as a
key factor governing the dissipation and possibly limiting the carrier mobility in pure graphene.
5
References and Notes:
1.
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, A. K. Geim, The electronic properties of
graphene. Rev. Mod. Phys. 81, 109–162 (2009).
R. Bistritzer, A. H. Macdonald, Electronic cooling in graphene. Phys. Rev. Lett. 102, 206410 (2009).
2.
3. W. K. Tse, S. Das Sarma, Energy relaxation of hot Dirac fermions in graphene. Phys. Rev. B. 79, 235406
4.
5.
(2009).
J. C. W. Song, M. Y. Reizer, L. S. Levitov, Disorder-assisted electron-phonon scattering and cooling
pathways in graphene. Phys. Rev. Lett. 109, 106602 (2012).
D. Halbertal, J. Cuppens, M. Ben Shalom, L. Embon, N. Shadmi, Y. Anahory, H. R. Naren, J. Sarkar, A.
Uri, Y. Ronen, Y. Myasoedov, L. S. Levitov, E. Joselevich, A. K. Geim, E. Zeldov, Nanoscale thermal
imaging of dissipation in quantum systems. Nature. 539, 407–410 (2016).
6. Materials and methods are available as supplementary materials.
7.
C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L.
Shepard, J. Hone, Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5,
722–726 (2010).
A. S. Mayorov, R. V Gorbachev, S. V Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S.
Novoselov, K. Watanabe, T. Taniguchi, A. K. Geim, Micrometer-scale ballistic transport in
encapsulated graphene at room temperature. Nano Lett. 11, 2396–2399 (2011).
D. A. Bandurin, I. Torre, R. Krishna Kumar, M. Ben Shalom, A. Tomadin, A. Principi, G. H. Auton, E.
Khestanova, K. S. Novoselov, I. V Grigorieva, L. A. Ponomarenko, A. K. Geim, M. Polini, Negative local
resistance caused by viscous electron backflow in graphene. Science. 351, 1055–1058 (2016).
8.
9.
10. D. Vasyukov, Y. Anahory, L. Embon, D. Halbertal, J. Cuppens, L. Neeman, A. Finkler, Y. Segev, Y.
Myasoedov, M. L. Rappaport, M. E. Huber, E. Zeldov, A scanning superconducting quantum
interference device with single electron spin sensitivity. Nat. Nanotechnol. 8, 639–44 (2013).
11. A. Finkler, D. Vasyukov, Y. Segev, L. Ne'Eman, E. O. Lachman, M. L. Rappaport, Y. Myasoedov, E.
Zeldov, M. E. Huber, Scanning superconducting quantum interference device on a tip for magnetic
imaging of nanoscale phenomena. Rev. Sci. Instrum. 83, 73702 (2013).
V. M. Pereira, F. Guinea, J. M. B. Lopes dos Santos, N. M. R. Peres, A. H. Castro Neto, Disorder induced
localized states in graphene. Phys. Rev. Lett. 96, 36801 (2006).
12.
13. D. W. Boukhvalov, M. I. Katsnelson, A. I. Lichtenstein, Hydrogen on graphene: Electronic structure,
total energy, structural distortions and magnetism from first-principles calculations. Phys. Rev. B. 77,
35427 (2008).
T. O. Wehling, M. I. Katsnelson, A. I. Lichtenstein, Impurities on graphene: Midgap states and
migration barriers. Phys. Rev. B. 80, 85428 (2009).
14.
15. A. V. Shytov, D. A. Abanin, L. S. Levitov, Long-range interaction between adatoms in graphene. Phys.
Rev. Lett. 103, 16806 (2009).
17.
16. H. Gonzales-Herrero, J. M. Gomez-Rodriguez, P. Mallet, M. Moaied, J. J. Palacios, C. Salgado, M. M.
Ugeda, J. Veuillen, F. Yndurain, I. Brihuega, Atomic-scale control of graphene magnetism by using
hydrogen atoms. Science. 352, 437–441 (2016).
J. Mao, Y. Jiang, D. Moldovan, G. Li, K. Watanabe, T. Taniguchi, M. R. Masir, F. M. Peeters, E. Y. Andrei,
Realization of a tunable artificial atom at a supercritically charged vacancy in graphene. Nat. Phys. 12,
545–550 (2016).
Z. H. Ni, L. A. Ponomarenko, R. R. Nair, R. Yang, S. Anissimova, I. V Grigorieva, F. Schedin, P. Blake, Z.
X. Shen, E. H. Hill, K. S. Novoselov, A. K. Geim, On resonant scatterers as a factor limiting carrier
mobility in graphene. Nano Lett. 10, 3868–3872 (2010).
18.
19. M. Titov, P. M. Ostrovsky, I. V. Gornyi, A. Schuessler, A. D. Mirlin, Charge transport in graphene with
resonant scatterers. Phys. Rev. Lett. 104, 76802 (2010).
20. D. Wong, J. J. Velasco, L. Ju, J. Lee, S. Kahn, H.-Z. Tsai, C. Germany, T. Taniguchi, K. Watanabe, A. Zettl,
F. Wang, M. F. Crommie, Characterization and manipulation of individual defects in insulating
hexagonal boron nitride using scanning tunnelling microscopy. Nat. Nanotechnol. 10, 949–953 (2015).
J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, A. Yacoby, Observation of
21.
6
22.
23.
24.
electron-hole puddles in graphene using a scanning single electron transistor. Nat. Phys. 4, 144–148
(2008).
F. Menges, H. Riel, A. Stemmer, C. Dimitrakopoulos, B. Gotsmann, Thermal transport into graphene
through nanoscopic contacts. Phys. Rev. Lett. 111, 205901 (2013).
C. Tao, L. Jiao, O. V Yazyev, Y. Chen, J. Feng, X. Zhang, R. B. Capaz, J. M. Tour, A. Zettl, S. G. Louie, H.
Dai, M. F. Crommie, Spatially resolving edge states of chiral graphene nanoribbons. Nat. Phys. 7, 616–
620 (2011).
J. Dauber, B. Terres, C. Volk, S. Trellenkamp, C. Stampfer, Reducing disorder in graphene nanoribbons
by chemical edge modification. Appl. Phys. Lett. 104, 83105 (2014).
25. D. Bischoff, A. Varlet, P. Simonet, M. Eich, H. C. Overweg, T. Ihn, K. Ensslin, Localized charge carriers in
graphene nanodevices. Appl. Phys. Rev. 2, 31301 (2015).
26. M. Y. Han, J. C. Brant, P. Kim, Electron transport in disordered graphene nanoribbons. Phys. Rev. Lett.
27.
104, 56801 (2010).
S. Jung, G. M. Rutter, N. N. Klimov, D. B. Newell, I. Calizo, A. R. Hight-Walker, N. B. Zhitenev, J. A.
Stroscio, Evolution of microscopic localization in graphene in a magnetic field from scattering
resonances to quantum dots. Nat. Phys. 7, 245–251 (2011).
28. A. G. F. Garcia, M. König, D. Goldhaber-Gordon, K. Todd, Scanning gate microscopy of localized states
in wide graphene constrictions. Phys. Rev. B. 87, 85446 (2013).
29. M. T. Allen, O. Shtanko, I. C. Fulga, A. Akhmerov, K. Watanabe, T. Taniguchi, P. Jarillo-Herrero, L. S.
Levitov, A. Yacoby, Spatially resolved edge currents and guided-wave electronic states in graphene.
Nat. Phys. 12, 128–133 (2016).
J. Chae, S. Jung, S. Woo, H. Baek, J. Ha, Y. J. Song, Y. W. Son, N. B. Zhitenev, J. A. Stroscio, Y. Kuk,
Enhanced carrier transport along edges of graphene devices. Nano Lett. 12, 1839–1844 (2012).
30.
31. M. J. Zhu, A. V Kretinin, M. D. Thompson, D. A. Bandurin, S. Hu, G. L. Yu, J. Birkbeck, A. Mishchenko, I.
J. Vera-Marun, K. Watanabe, T. Taniguchi, M. Polini, J. R. Prance, K. S. Novoselov, A. K. Geim, M. Ben
Shalom, Edge currents shunt the insulating bulk in gapped graphene. Nat. Commun. 8, 14552 (2017).
Acknowledgements:
We thank M. E. Huber for SOT readout setup and M. Solodky for data analysis assistance. This work was
supported by the Minerva Foundation with funding from the Federal German Ministry of Education and
Research, by the NSF/DMR-BSF Binational Science Foundation BSF No. 2015653 and NSF No. 1609519, by
Weizmann – UK Making Connections Programme, and by Rosa and Emilio Segré Research Award. A.K.G. and
M.B. acknowledge support from EPSRC - EP/N010345/1, and from the European Research Council
ARTIMATTER project - ERC-2012-ADG. L.S.L. and E.Z. acknowledge the support of the MISTI MIT-Israel Seed
Fund.
7
Tac [μK]
Vtg
C
tSOT
hBN/Gr/hBN
Vbg
SiO2/Si
A
B
500 nm
Idc
A
C
B
500 nm
E
E
e
D
e
p
20 nm
Tac [μK]
Figure 1. Observing individual dissipation sources in a graphene heterostructure. (A) Schematic
side view of the measurement setup with hBN-graphene-hBN heterostructure and SQUID-on-tip
image of the device patterned into 4×4 µm2 square
nanothermometer (tSOT). (B) Optical
chamber (bright). A fixed current (cid:1)(cid:2)(cid:3) (cid:4) 3 µA is driven through the connecting constrictions
(cid:7)(cid:8)(cid:9)(cid:10), (cid:12)(cid:13) of the area outlined in (B) at (cid:14)(cid:15)(cid:16) (cid:4) (cid:17)2 V
(arrows). (C) Scanning ac nano-thermometry (cid:5)(cid:6)(cid:3)
and (cid:14)(cid:18)(cid:16) (cid:4) 9 V at 4.2 K. The tSOT is scanned while oscillating with amplitude (cid:10)(cid:6)(cid:3) (cid:4) 2.7 nm at 12°
to (cid:10) axis. Scan area 5.5 × 5 µm2, pixel size 18 nm, scan-speed 20 ms/pixel, (cid:19) (cid:4) 20 nm, (cid:1)(cid:2)(cid:3) (cid:4) 3
µA. The sharp rings (marked 'A','B','C') uncover three isolated sources of dissipation in the bulk of
graphene in addition to a dense array of resonances along the graphene edges. (D) Zoom-in on
defect 'C' at (cid:14)(cid:18)(cid:16) (cid:4) 5 V. Scan area 140 × 150 nm2, pixel size 1.9 nm, scan-speed 20 ms/pixel, (cid:19) (cid:4)
20 nm, (cid:1)(cid:2)(cid:3) (cid:4) 3 µA. (E) Schematic image of an atomic defect in graphene that creates a
localized resonant dissipative state at the center of the ring (D) mediating inelastic scattering of
impinging electron (red) into a phonon (orange) and a lower energy electron (blue). The defect,
forming an sp3 orbital (green), can arise from carbon vacancy, adatom, or admolecule.
8
Figure 2. Thermal nano-spectroscopy of dissipative localized states. (A) Schematic spectrum of EP-LDOS
𝐷𝑒𝑝(𝜀) (blue) and the graphene Dirac dispersion relation (green). (B) Temperature variation 𝛿𝑇(𝑉𝑡𝑔)
measured above the defect vs. tip potential 𝑉𝑡𝑔 provides nanoscale spectroscopy of the cooling power
spectrum 𝑃𝑒𝑝(𝜀) by tip-induced band bending. (C) The expected 𝛿𝑇(𝑉𝑏𝑔, 𝑉𝑡𝑔) showing diagonal resonance
lines that map the peaks in 𝐷𝑒𝑝(𝜀). (D) The experimental 𝛿𝑇(𝑉𝑏𝑔, 𝑉𝑡𝑔) measured by the tSOT at ℎ = 10 nm
above the center of defect 'C' in presence of 𝐼𝑑𝑐 = 3 µA, revealing a single resonance dissipation line. Signal
𝑡𝑔 over 𝑉𝑡𝑔 (Section 2 (6)). (E) A zoomed-in line cut 𝛿𝑇(𝑉𝑡𝑔) along the
obtained through integration of 𝑇𝑎𝑐
𝐿𝑆 = 0.2 V. (F) The cooling power spectrum 𝑃𝑒𝑝(𝜀) ∝ 𝐷𝑒𝑝(𝜀), derived from
dashed line in (D) at 𝑉𝑏𝑔 = 𝑉𝑏𝑔
measurement of the resonant dissipation ring (Section 9 (6)) showing a single sharp peak near the Dirac
point at 𝜀𝐿𝑆 = −22 meV.
9
Dep(ε)E[meV]ka.u.a.u.AVtg[V]δT Vbg= 0 Va.u.BEδT[µK]𝑉𝑏𝑔=𝑉𝑏𝑔𝐿𝑆=0.2 VVtg[V]Experimental dataSchematic EP-LDOSPep(ε) [a.u.]ε[meV]FδE=13 meVεLSδT[µK]Empty stateOccupied stateVtg[V]Vbg[V]DVtg[V]Vbg[V]CδT[a.u.]Vtg[V]Vbg[V]CδT[a.u.]
Figure 3. Origin of the resonant ring structures. (A) Schematic description of the systems' energy levels
corresponding to tip position marked by black point in (C): Two localized states with a peak in EP-LDOS at 𝐸𝐿𝑆
pinned to Dirac energy 𝐸𝐷. The tip potential 𝑉𝑡𝑔 induces band-bending resulting in the calculated position-
dependent 𝐸𝐷(𝑥) (blue). The left LS is off resonance while the tSOT positioned at 𝑥 =– 𝑅 brings the right LS
into resonance for inelastic scattering of electrons injected at energy 𝐸𝑒 (red arrows). The result is a point-
source of phonon emission (red arcs). The Fermi energy 𝐸𝐹 (dashed line) is determined by the back gate
voltage 𝑉𝑏𝑔. (B) Dashed line: Schematic temperature profiles due to ballistic 2D phonon emission from LS at
resonant conditions, 𝛿𝑇𝑜𝑛(𝑥) ∝ (1 + (𝑥/ℓ)2)−1/2 with ℓ = 100 nm (Section 5.2 (6)). Red line: Calculated
temperature variation 𝛿𝑇(𝑥) measured by the scanning tSOT that brings the LS into resonance at a distance
±𝑅 from each defect. Blue: Calculated 𝑇𝑎𝑐(𝑥) = 𝑥𝑎𝑐𝑑𝑇(𝑥)/𝑑𝑥 measured by the tSOT vibrating parallel to
the surface. (C) 𝑇𝑎𝑐(𝑥, 𝑦) measured in the central region of Fig. 1C showing dissipation rings around defects
'B' and 'C'. The dashed line describes the scan direction depicted in (A). Scan area 3.5 0.4 µm2, pixel size 8
nm, scan-speed 20 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = −0.3 V, 𝑉𝑡𝑔 = 5.5 V, 𝐼𝑑𝑐 = 6 µA and 𝑥𝑎𝑐 = 2.7 nm directed at
18 to the x-axis.
10
200 nmCBCTac[μK]BδTon,leftδTTacδTon,rightxT-RR0AED(x)eELSELSxE-RR0tSOTEFEe
Figure 4. Thermal spectroscopy of individual bulk and edge localized states. (A) Map of 𝑇𝑎𝑐(𝑥) line scans
through defect C upon varying 𝑉𝑏𝑔 at 𝑉𝑡𝑔 = − 5 V showing the bell-shaped resonance trace. (B) Resonance
𝐿𝑆. (C) Resonance trace as in (A) at 𝑉𝑡𝑔 = 4.2 V.
traces for various values of 𝑉𝑡𝑔 that switch their polarity at 𝑉𝑏𝑔
Scan parameters for (A-C): ℎ = 20 nm, pixel width 5 nm, pixel height 30 mV, scan-speed 20 ms/pixel, 𝑥𝑎𝑐 =
2.7 nm, 𝐼𝑑𝑐 = 3 µA, linear subtraction was applied to each line to emphasize the resonance traces (see Fig.
S11 and Movie S5 for raw images). (D-E), Maps of 𝑇𝑎𝑐(𝑥) line scans along the bottom edge of the square
graphene sample in Fig. 1C at 𝑉𝑡𝑔 = −10 V (D) and 10 V (E). Each bell-shaped trace originates from a single
dissipative atomic defect. Scan parameters: ℎ = 20 nm, pixel width 4 nm, pixel height 100 mV, scan-speed 60
ms/pixel, 𝑥𝑎𝑐 = 2.7 nm, 𝐼𝑑𝑐 = 3 µA, high-pass filtering was used to emphasize the pertinent bell-shaped
resonance traces. (F) Optical image of Sample 2 with patterned hBN/graphene/hBN heterostructure (bright)
on SiO2 substrate (dark) and dc current 𝐼𝑑𝑐 = 1 μA rms chopped at 35.5 Hz applied as indicated by the
arrows. (G) Thermal image 𝛿𝑇(𝑥, 𝑦) revealing dissipation along the graphene edges. Scan area 4.7 3.7 µm2,
𝐹𝐵 at this
pixel size 50 nm, scan-speed 200 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = 8 V, 𝑉𝑡𝑔 =0.85 V corresponding to 𝑉𝑡𝑔
𝑉𝑏𝑔.
11
Vtg[V]Vbg[V]x[nm]𝑉𝑏𝑔𝐿𝑆BTac[μK]Vtg=-5 VVbg[V]Ax[nm]Vtg=4.2 VCVbg[V]x[nm]Tac[μK]500 nmVbg=8 VGδT[μK]Idc500 nmFIdcVtg=-10 VTac[μK]Vbg[V]DVtg=10 Vx[μm]Vbg[V]E
Supplementary Materials for: Imaging resonant dissipation from individual atomic defects in
graphene
Materials and Methods
1. Sample fabrication and transport characterization
Our devices are made from single-layer graphene placed atop a relatively thick (30 nm) crystal of
hexagonal boron nitride (hBN), and covered by a thinner (10 nm) hBN. The heterostructures are assembled
using the dry-peel technique on top of an oxidized Si wafer (90 nm of SiO2) which served as a back gate, and
then annealed at 300 C in Ar-H2 atmosphere for 3 hours. After this, a PMMA mask is designed by electron
beam lithography to define the heterostructures' boundaries and, in a similar step, to define the contacts
(50 nm of superconducting Nb) positions. The exposed heterostructure is etched by a reactive ion plasma
combination of CHF3 and O2 which is optimized to uncover a narrow strip (~10 nm wide) of the otherwise
encapsulated graphene. This procedure yields low contact resistance (31) helping to reduce the local heating
at the metal-graphene interface. The graphene/Nb contact interface was designed to be located far outside
the imaging chamber (10 µm away). In the process of defining the imaging chambers geometry the plasma
etching conditions were optimized to minimize the uncovered graphene edge to about 1 nm.
The fabrication procedure results in high-quality samples with momentum-relaxation mean free path
that is limited by the chamber dimensions over a wide range of carrier concentrations and temperatures (9).
The studied sample, shown in Fig. 1 and referred to as Sample 1, consisted of a square-shaped chamber of 4
4 µm2 with three constrictions at the corners connected to external electrical contacts. The three contact
points to the chamber were insufficient to perform a four-probe measurement of its transport properties.
The top constriction, however, had additional contacts above it, which allowed us to carry out four-probe
measurement of its magneto-resistance as a function of 𝑉𝑏𝑔 as shown in Fig. S1. The quantum Hall oscillation
data allow us to extract the back-gate capacitance to the graphene 𝐶𝑏𝑔 = 1.25 ∙ 1011 1/cm2V and determine
𝐶𝑁𝑃 = −0.26 V. The CNP of the 500 nm wide
the charge neutrality point (CNP) of the constriction, 𝑉𝑏𝑔
𝐶𝑁𝑃 =
constriction, however, may differ from the CNP in the square bulk chamber which we estimate to be 𝑉𝑏𝑔
0.48 V as described in Section 8 below. A second sample (Sample 2) of similar structure but with thicker hBN
top layer of 30 nm was used for the measurements described in some sections in the SM as noted. Sample 2
had 𝐶𝑏𝑔 = 0.9∙ 1011 1/cm2V and 𝑉𝑏𝑔
𝐶𝑁𝑃 = 0.6 V.
2. tSOT characterization and thermal imaging schemes
The tSOT was fabricated by self-aligned three-step Pb deposition onto a pulled quartz pipette as
described previously (5, 10). Figure S2A shows a SEM image of the tSOT device used in this work for
measurements on Sample 1. The I-V characteristics of the tSOT at 4.2 K are shown in Fig. S2C at various
applied magnetic fields. The current 𝐼𝑡𝑆𝑂𝑇 is measured using a SQUID series array amplifier (11) (SSAA) as
shown in the inset of Fig. S2C. For 𝐼𝑡𝑆𝑂𝑇 < 𝐼𝑐(𝐻) the device is in the superconducting state, while at currents
above the critical current 𝐼𝑐(𝐻) a finite voltage 𝑉𝑡𝑆𝑂𝑇 is developed redirecting part of the externally applied
current to the shunt resistor 𝑅𝑠. The interference pattern of the critical current 𝐼𝑐(𝐻) in Fig. S2D shows the
central lobe of period 2.4 T corresponding to effective tSOT diameter 𝑑 = 33 nm. The higher lobes are
suppressed and truncated by the upper critical field 𝐻𝑐2 = 1.73 T of the Pb film. The magnetic and thermal
sensitivities of the tSOT were characterized as described in Refs. (5, 10). The flux noise of the tSOT in the
white noise region above about 1 kHz at 4.2 K was 145 n0/Hz1/2 at applied field 𝜇0𝐻 = 0.56 T,
corresponding to spin noise of 0.85 µB/Hz1/2; the thermal noise at zero field was 510 nK/Hz1/2. The thermal
coupling between the tSOT and the sample was provided by 60 mBar of He exchange gas (5). Sample 2 was
studied using a similar tSOT of 48 nm effective diameter.
12
The tSOT was attached to a quartz tuning fork (TF) as shown in Fig. S2B. The TF was excited by applying
an ac excitation voltage 𝑉𝑇𝐹 to it at the resonance frequency 𝑓𝑇𝐹 = 36.9867 kHz and the current through the
TF was monitored. As the tip approaches the sample surface to within a few nm, a shift in 𝑓𝑇𝐹 and in the
phase of the current is detected and used as a feedback for height control. After approaching the surface,
the tSOT was retracted to a height ℎ of 10 to 40 nm (as indicated in figure captions) above the surface of the
hBN, the feedback was switched off, and the scanning was performed at a fixed height ℎ.
𝑇𝐹(𝑥, 𝑦) = 𝑥𝑎𝑐𝑑𝛿𝑇(𝑥, 𝑦)/𝑑𝑥. Figures 1, 3 and 4 show such 𝑇𝑎𝑐
In order to avoid the 1/𝑓 noise of the tSOT, in addition to the dc 𝛿𝑇 measurement, in our studies we
also employed 𝑇𝑎𝑐 measurements using two different methods. The first method uses the ac oscillation of
the tSOT, 𝑥𝑎𝑐, parallel to the sample surface by applying excitation 𝑉𝑇𝐹 to the TF at its resonance frequency
𝑇𝐹 reflects the local temperature gradient along the vibration direction of the
𝑓𝑇𝐹. The resulting measured 𝑇𝑎𝑐
𝑇𝐹 data which we refer to as 𝑇𝑎𝑐 in the
TF, 𝑇𝑎𝑐
𝑇𝐹(𝑥, 𝑦) is imaged over a sufficiently large area, the dc
main text for brevity. If 𝑥𝑎𝑐 is sufficiently small and 𝑇𝑎𝑐
temperature variation can be reconstructed by integration 𝛿𝑇(𝑥, 𝑦) = ∫ 𝑑𝑥′𝑇𝑎𝑐
/𝑥𝑎𝑐. Such
integration, however, is usually unnecessary since the essential information can be readily extracted directly
𝑎𝑐 to the tip in addition to the dc 𝑉𝑡𝑔, which
from 𝑇𝑎𝑐
𝑡𝑔(𝑥, 𝑦) =
measures the change in the local temperature in response to a change in the tip potential, 𝑇𝑎𝑐
𝑡𝑔 vs. 𝑉𝑡𝑔 at a fixed tip position the dc temperature variation 𝛿𝑇(𝑉𝑡𝑔)
𝑉𝑡𝑔
can be obtained by integration, 𝛿𝑇(𝑉𝑡𝑔) = ∫
which provides direct spectroscopic
information on the electron-phonon cooling power spectrum (see Sections 4 and 9 below). The data
presented in Figs. 2D and 2E were obtained by this method.
𝑇𝐹. In the second method we apply an ac potential 𝑉𝑡𝑔
𝑎𝑐𝑑𝛿𝑇(𝑥, 𝑦)/𝑑𝑉𝑡𝑔. By measuring 𝑇𝑎𝑐
𝑡𝑔(𝑉𝑡𝑔
′ )
𝑇𝐹(𝑥′, 𝑦)
𝑑𝑉𝑡𝑔
′ 𝑇𝑎𝑐
𝑥
𝑉𝑡𝑔
Usage of these three measurement methods is demonstrated in Figs. S3B-D, which details imaging of
the dissipation ring of a defect on the left edge of Sample 2 (Figs. S3A and S4A). Imaging was done by
𝑎𝑐 = 0.1 V rms at 𝑓 = 3.06 kHz and 𝑥𝑎𝑐 = 1.5 nm rms at 𝑓𝑇𝐹 in the presence of 𝐼𝑑𝑐 = 1 µA rms
applying 𝑉𝑡𝑔
chopped at 35.5 Hz (see Section 5 below). The 𝛿𝑇(𝑥, 𝑦) in Fig. S3B shows a ring of enhanced temperature,
described schematically by the solid red line in Fig. 3B in the main text. Note that the intensity of the ring is
higher within the graphene heterostructure region (right) than outside of it (left) due to better heat
conductivity of the hBN/graphene/hBN as compared to SiO2 substrate. Figure S3C shows the simultaneously
𝑇𝐹(𝑥, 𝑦), described schematically by the blue line in Fig. 3B. Figure S3D shows thermal imaging
measured 𝑇𝑎𝑐
using the ac tip gating method. Since varying tip potential 𝑉𝑡𝑔 changes the radius 𝑅 of the ring, the resulting
𝑎𝑐𝑑𝑇(𝑟, 𝜃)/𝑑𝑟, where 𝑟 is the
signal can be expressed as 𝑇𝑎𝑐
radial distance from the center of the ring. The two ac methods are thus equivalent to measuring two spatial
derivatives of the dc image, 𝑇𝑎𝑐
𝑎𝑐𝑑𝑇(𝑥, 𝑦)/𝑑𝑉𝑡𝑔 = (𝑑𝑅/𝑑𝑉𝑡𝑔)𝑉𝑡𝑔
𝑇𝐹(𝑥, 𝑦) ∝ 𝑑𝑇(𝑥, 𝑦)/𝑑𝑥 and 𝑇𝑎𝑐
𝑡𝑔(𝑥, 𝑦) ∝ 𝑑𝑇(𝑟, 𝜃)/𝑑𝑟.
𝑡𝑔(𝑥, 𝑦) = 𝑉𝑡𝑔
In the studies described in SM we have mainly employed the TF ac method (Fig. S3B) due to its superior
𝑇𝐹(𝑥, 𝑦) of the
S/N performance and operational convenience. Figure 1C presents such ac thermal image 𝑇𝑎𝑐
sample. Note that the bulk of the sample has a uniform background 𝛿𝑇(𝑥, 𝑦) temperature (which is not
affected by the local tip gating) that is slightly higher than that of the surrounding SiO2 substrate (see Section
5 below). This small step-wise change in 𝛿𝑇(𝑥, 𝑦) at the sample edges translates accordingly into a strip of a
𝑇𝐹(𝑥, 𝑦) signal along the left edge of the sample and a similar negative strip along the
bright background 𝑇𝑎𝑐
right edge in Fig. 1C.
3. Calibration of the vibration amplitude of the tuning fork
The vibration amplitude of the tSOT attached to the TF excited at its resonance frequency can be
𝑇𝐹(𝑥, 𝑦) images. We demonstrate here the procedure
derived by a direct comparison of the 𝛿𝑇(𝑥, 𝑦) and 𝑇𝑎𝑐
by imaging a constriction in Sample 2 as marked in Fig. S4A. A dc current 𝐼𝑑𝑐 = 4 µA rms, chopped by a
square wave at 35.5 Hz was applied to the constriction as indicated by the arrows. The resulting images of
𝐹𝐵, are presented in Figs.S4B,F.
𝛿𝑇(𝑥, 𝑦) and 𝑇𝑎𝑐
𝑇𝐹(𝑥, 𝑦), measured simultaneously at a flat-band condition 𝑉𝑡𝑔
13
The chopping of the current allows measuring 𝛿𝑇(𝑥, 𝑦) at a frequency of 35.5 Hz using a lock-in amplifier,
thus significantly reducing the 1/𝑓 noise contribution to the tSOT signal. (The presented 𝛿𝑇(𝑥, 𝑦) has been
corrected for the numerical factor of 2√2/𝜋 between the first harmonic lock-in reading of a square wave
𝑇𝐹(𝑥, 𝑦) =
and the corresponding time averaged value.) The measured 𝑇𝑎𝑐
𝑥𝑎𝑐 𝜕𝛿𝑇 𝜕𝑥⁄ + 𝑦𝑎𝑐 𝜕𝛿𝑇 𝜕𝑦 =⁄
𝒓𝑎𝑐 ∙ ∇𝛿𝑇 where 𝑥𝑎𝑐 and 𝑦𝑎𝑐 are the rms values of the tSOT vibration along the
imaging axes and 𝒓𝑎𝑐 is the corresponding vibration vector. In order to derive 𝑥𝑎𝑐 and 𝑦𝑎𝑐 we take numerical
derivatives 𝜕 𝜕𝑥⁄
of Fig. S4B (Figs. S4C,D) and perform numerical two-parameter fit of a linear
𝑇𝐹(𝑥, 𝑦) image of Fig. S4F. The resulting best fit numerical
combination of Figs. S4C,D to the measured 𝑇𝑎𝑐
image, which is presented in Fig. S4E, provides values 𝑥𝑎𝑐 = 4.05 nm and 𝑦𝑎𝑐 = 0.31 nm, indicating that the
TF oscillated at an angle of 4.3 deg with respect to the 𝑥 axis. This procedure was then repeated for various
values of TF excitation voltage 𝑉𝑇𝐹. Figure S4G shows the resulting linear dependence of the tSOT vibration
amplitude 𝑟𝑎𝑐 = √𝑥𝑎𝑐
𝑇𝐹(𝑥, 𝑦) is expected to follow 𝑇𝑎𝑐
2 on 𝑉𝑇𝐹.
and 𝜕 𝜕𝑦⁄
2 + 𝑦𝑎𝑐
Supplementary Text
4. Theoretical analysis of the electron-phonon cooling power spectrum
Graphene is known to host a wide variety of atomic-scale defects which can act as resonant scatterers,
trapping electrons in quasibound states. Here we show that such defects enhance the inelastic electron-
phonon scattering and provide a pathway for electron-lattice energy dissipation. We define the notion of the
electron-phonon cooling power spectrum, which is the quantity measured by our instrument, and show that
in realistic cases it factors into a product of a contribution that depends on the defect density of states and a
contribution that depends on the electron and phonon energy distributions. While here, for simplicity, we
focus on the two-temperature case (𝑇𝑒 and 𝑇𝑝 for the electron and phonon bath respectively), the notion of
the cooling power spectrum can be easily generalized to a more general non-equilibrium transport regime.
We stress that such resonant cooling pathways have not been studied previously, neither theoretically nor
experimentally.
We start with a brief summary of the studies of resonant scatterers in graphene and then proceed to
describe inelastic scattering mediated by these defects. Ab initio (14) and STM (16, 17) studies have shown
that quasi-bound states with energies near the Dirac point arise in a robust manner when adatoms or polar
groups like H, F, CH3 or OH- bind covalently to carbon atoms (Fig. 1E), transforming the trigonal sp2
orbital to
the tetrahedral sp3 orbital. Each transformed C atom represents a vacancy in the 𝜋-band that produces a
quasibound state i.e. a sharp resonance positioned near the Dirac point. In contrast, the defects having other
symmetries (e.g. adatoms positioned between two C atoms or at a hexagon center) typically form
resonances far away from the Dirac point. This behavior can be captured using a tight-binding model on the
honeycomb lattice with an on-site disorder
𝐻𝑒𝑙 = ∑
𝛿(𝑟 − 𝑟𝑖), (S1)
where 𝑟𝑖 are the defect positions, and the energy parameters 𝑢𝑖 are on the order or greater than graphene
bandwidth, W=6t0 (15). Focusing on a single defect placed at the origin 𝑟 = 0 on sublattice B, and passing to
the momentum representation, we obtain
𝑢(𝑟) = ∑ 𝑢𝑖
†𝜓𝑟′ + ℎ. 𝑐. ) + ∑ 𝑢(𝑟)
†𝜓𝑟,
𝑟−𝑟′=1
𝜓𝑟
𝑡0
(𝜓𝑟
𝑟
𝑖
𝐻𝑒𝑙 = ∑ [
𝒌
†
𝜓𝐴,𝑘
† ] [
𝜓𝐵,𝑘
0
𝑡0𝑓∗(𝒌)
𝑡0𝑓(𝒌)
0
] [
𝜓𝐴,𝑘
𝜓𝐵,𝑘
] + ∑
𝒌,𝒌′ 𝜓𝐵,𝒌′
𝑢0
† 𝜓𝐵,𝒌
, (S2)
where 𝑓(𝒌) = 𝑒𝑖𝒏1𝒌 + 𝑒𝑖𝒏2𝒌 + 𝑒𝑖𝒏3𝒌 with n1,2,3 the vectors connecting a C atom to its nearest neighbors, and
the sum is taken over k and k' in the Brillouin zone. At low defect concentration and for 𝑢0 values large
compared to the bandwidth 𝑊 = 6𝑡0, each defect hosts a single resonance state with the energy 𝜀𝐿𝑆 close
to the Dirac point, broadened due to hybridization with the states in the Dirac continuum. Scattering of band
electrons on the defect is described by a T-matrix, i.e. the defect potential renormalized by multiple
scattering processes:
14
𝑡(𝜀) =
𝜋𝑣2
𝜀 ln(𝑖𝑊 𝜀⁄ ) + 𝛿
, 𝛿 = 𝜋 𝑣2 𝑢0⁄ ≪ 𝑊. (S3)
that features a resonance centered at an energy 𝜀𝐿𝑆, near the Dirac point (𝜀𝐿𝑆 ≈ − 𝛿 ln⁄ (𝑊 𝛿⁄ )). Here the
parameter δ describes detuning of the resonance from the Dirac point, 𝑊 is the bandwidth, 𝑊 ≈ 6 eV,
𝑣 ≈ 106 𝑚 𝑠⁄ is the Fermi velocity, and for simplicity we set Planck's constant equal unity. At 𝑢0 large
compared to 𝑊 the resonance energy 𝜀𝐿𝑆 is nonzero and small compared to 𝑊. The sign of 𝜀𝐿𝑆 is opposite to
that of 𝑢0, i.e. for 𝑢0 positive 𝜀𝐿𝑆 is of a negative sign. This is in good agreement with the results of ab initio
studies (14) predicting the resonance energy values: 𝜀𝐿𝑆 = −0.03, −0.11, −0.70, −0.67 eV for the sp3 orbital
state induced by H, CH3, OH, and F, respectively.
The contribution of a defect to the single-particle density of states is given by
𝜋𝑣2𝜀/2
(𝜀ln (𝑊/𝜀)+𝛿)2+(𝜋𝜀/2)2 ,
1
sgn𝜀. The energy dependence
𝜋
𝜋
2
(S4)
1
𝜋
Im 𝑡(𝜀) =
𝑖𝑊
𝜀
𝑊
𝜀
Im 𝑡(𝜀) defines a sharp
where we used an identity ln (
peak positioned near the Dirac point. The half-width of the resonance in 𝑡(𝜀) predicted by the above model
is 𝛾 ≈ 𝜋𝛿 (2ln (𝑊 𝛿⁄ ))
, i.e. is small when 𝛿 is small.
) = ln (
) + 𝑖
⁄
The spatial behavior of the states associated with such resonances can be understood in a simple way
using the low-energy Dirac Hamiltonian
𝐻 = [
0
−𝑖𝑣𝜕+
−𝑖𝑣𝜕− 𝑢0𝛿(𝑥)
],
𝜕±=𝜕𝑥 ± 𝑖𝜕𝑦.
(S5)
𝑎
𝑥−𝑖𝑦
1
(
0
𝜓(𝑥, 𝑦) =
For a large on-site energy 𝑢0, the Hamiltonian hosts a single zero-energy eigenstate of the form
), wherein the approximate particle-hole symmetry becomes exact in the large-𝑢0 limit.
The wavefunction 𝜓(𝑥, 𝑦) features a power-law tail and a log-diverging normalization, and is therefore
marginally delocalized. When the defect resides on the graphene B sublattice, the zero-mode wavefunction
takes nonvanishing values on the A sublattice, and vice versa. Interestingly, the zero modes survive when
many defects are placed on the same sublattice, A or B (15).
Next we proceed to calculate the cooling power spectrum for a defect and show that in realistic cases it
is proportional to the defect density of states with a prefactor that depends on the electron and phonon
energy distributions. The contribution of a resonant scatterer to electron-phonon scattering can be
understood pictorially as resonant trapping of band electrons on the quasi-bound state with the released
energy difference transferred to phonons. Our treatment of defect-assisted electron-phonon scattering
accounts for the key aspects of interaction between electrons and phonons in graphene. First, the unusually
high energy of optical phonons makes optical phonons irrelevant for electron-lattice cooling at temperatures
below few hundred kelvin. As a result, the long-wavelength acoustic phonons play a dominant role despite
their relatively weak coupling to electrons. Second, momentum conservation strongly limits the phase
volume for electron-phonon scattering in graphene bulk. Atomic defects can absorb phonon recoil
momentum and thus relieve the bottleneck due to the small phase volume, giving rise to an enhanced
cooling rate near the defect. Microscopically this can be described with the help of the Hamiltonian
𝐻 = 𝐻𝑒𝑙 + 𝐻𝑝ℎ + 𝐻𝑖𝑛𝑡,
(S6)
where 𝐻𝑒𝑙, given in Eq. (S1), describes electrons and their scattering by the defects as discussed above,
𝐻𝑝ℎ = ∑ 𝜔𝑘𝑏𝑘
+ h.c. describes electron-
phonon interaction. Here 𝑔√𝜔𝑘 is the graphene deformation potential matrix element (see Ref. (4)). Starting
with the Hamiltonian (S6) we calculate the energy dissipation rate as
describes acoustic phonons, and 𝐻𝑖𝑛𝑡 = ∑
𝑔√𝜔𝑘𝑎𝒑′
† 𝑎𝒑𝑏𝒌
𝒑′=𝒑+𝒌
†𝑏𝑘
𝑘
𝑃𝑒𝑝(𝜀) = ∑ 𝜔𝑊𝑝→𝑝′𝑘(1 − 𝑛′)𝑛(𝑁𝑘 + 1)𝛿(𝜀′ + 𝜔 − 𝜀)
𝑝′=𝑝+𝑘
− ∑ 𝜔𝑊𝑝′𝑘→𝑝(1 − 𝑛)𝑛′𝑁𝑘𝛿(𝜀′ + 𝜔 − 𝜀)
(S7)
𝑝′+𝑘=𝑝
15
Here 𝑛, 𝑛′ and 𝑁𝑘 are Fermi and Bose distributions for electrons and phonons with momenta p, p' and k, and
with the energies 𝜀 = 𝜀𝑝, 𝜀′ = 𝜀𝑝′, 𝜔 = 𝜔𝑘, respectively. The two terms in (S7) describe processes of phonon
emission and phonon absorption. The microscopic transition rate is evaluated from Fermi's Golden Rule as
𝑀2 with the matrix element 𝑀 describing defect-assisted electron-phonon scattering
𝑊𝒑→𝒑′𝒌 =
comprising several different contributions. Namely, phonon emission can take place either before or after
the carrier is trapped on the quasibound state (for details see Ref. (4)), giving
2𝜋
ℎ
𝑀 = 𝑀0(𝑘) 𝐺(𝜀, 𝑝′ + 𝑘)
1 + 𝜎3
2
𝑡(𝜀) + 𝑡(𝜀′)
1 + 𝜎3
2
𝐺(𝜀′, 𝑝 − 𝑘)𝑀0(𝑘)
+ ∑ 𝑡(𝜀′)
𝑞
1+𝜎3
2
𝐺 (𝜀′, 𝑞 −
𝑘
2
) 𝑀0(𝑘)𝐺 (𝜀, 𝑞 +
𝑘
2
)
1+𝜎3
𝑡(𝜀)
(S8)
2
⁄
where 𝑀0(𝑘) = 𝑔√𝜔𝑘 is the electron-phonon matrix element, 𝐺(𝜀, 𝑝) = 1 (𝜀 − 𝑣𝜎𝑝)
is the graphene
electron Greens function, with the 2x2 matrices accounting for the A/B sublattice structure. The quantity
𝑡(𝜀) is the scatterer T-matrix evaluated above, the factors
account for the sublattice A or B on which the
defect is located.
1+𝜎3
2
Starting from a completely general expression (S8), our subsequent analysis proceeds differently for the
cases when the values of temperature 𝑇 and bias eV are (i) much smaller, or (ii) much greater than the
resonance width 𝛾 = 𝜋𝛿 (2ln (𝑊 𝛿⁄ ))
. In the case (i) the 2x2 matrix structure in (S8) simplifies after taking
into account that the change of electron energy-which is of the order of 𝑘𝐵𝑇 and 𝑒𝑉, whichever is
greater-is small on the scale of 𝛾 and thus the process is quasi-elastic. Also, at not too low temperatures the
phonon momentum values k are typically large compared to electron p and p' values, allowing us to replace
𝐺(𝜀, 𝑝) with ±
in the first two terms and giving an expression
⁄
1
𝑣𝜎𝑘
𝑖𝜎×𝑘
1
2𝜋𝑣2 𝑀0(𝑘)ln (
𝑊
𝑣𝑘
𝑣𝑘2 𝑡(𝜀)+
𝑀(𝑘) = 𝑀0(𝑘)
(S9)
For temperatures of interest the phonon momentum 𝑘𝑝 ≈ 𝑘B𝑇𝑒/𝑠, where 𝑠 ≈ 2 ∙ 104 𝑚 𝑠⁄ , the sound
velocity, is much greater than Fermi momentum for electron Fermi energy on resonance with the defect,
𝜀𝐿𝑆 = 𝜀𝐹. This allows us to disregard the first term in (S9) as compared to the second term. After making this
approximation, plugging the matrix element 𝑀2 in (S7) and carrying out standard algebra, we arrive at an
expression for the cooling rate which is a product of the defect density of states and a function of the
electron and phonon temperatures
𝑡(𝜀′)𝑡(𝜀).
)
2
1+𝜎3
5
𝑃𝑒𝑝(𝜀) = 𝐴(𝜀) ((𝑘𝐵𝑇𝑒)5 − (𝑘𝐵𝑇𝑝)
) , 𝐴(𝜀) =
[(𝜀ln (𝑊/𝜀)+𝛿)2+(𝜋/2)2𝜀2]2 , (S10)
where we used the relation between the electron-phonon coupling constant and graphene deformation
potential 𝑔2 = 𝐷/2𝜌𝑠2 with 𝐷 ≈ 50 eV and correspondingly
ℏ2𝜌𝑠2𝑣2 = 1.86 × 1019 Joule-1. The quantity
𝑃𝑒𝑝(𝜀) vanishes in equilibrium as a result of detailed balance, but is nonzero when the system is driven out of
equilibrium. For numerical estimates we rewrite Eq. (S10) scaling energy by 1 meV and temperature by 1 K:
48𝜁(5)
ℏ3𝜌𝑠4
𝐷2
𝜋2
𝐷2
(𝜋/2)4𝜀2ln2(
𝑊
𝑣𝑘𝑝
)
𝑃𝑒𝑝(𝜀) =
𝜀2ln2(
𝑊
𝑣𝑘
)(𝑇𝑒
5−𝑇𝑝
5) [1 K]−5 [1 meV]2
[(𝜀ln (𝑊/𝜀)+𝛿)2+(𝜋/2)2𝜀2]2 × 260 fW ,
(S11)
Figure S5 shows 𝑃𝑒𝑝(𝜀) derived from Eq. (S11) for several indicated values of 𝜀𝐿𝑆 along with the experimental
𝛿𝑇(𝜀). The cooling power spectrum 𝑃𝑒𝑝(𝜀) exhibits resonance behavior with a sharp peak at 𝜀 = 𝜀𝐿𝑆
consistent with the experimental findings. Using for illustration 𝑇𝑝 = 4.2 K, ∆𝑇 = 1 K, and ln(𝑊 𝑣𝑘𝑝
) ≈
ln(270) ≈5.6, the dissipated power at the defect is on the order of 6 pW at resonant conditions (Fig. S5)
comparable to the experimental evaluations in Section 5.
Using Eq. (S10) and a definition for the electron-phonon heat conductivity of a defect as 𝑃𝑒𝑝(𝜀) =
𝜅𝑒𝑝(𝜀, 𝑇𝑒, 𝑇𝑝)𝛥𝑇 we obtain:
⁄
𝜅𝑒𝑝(𝜀, 𝑇𝑒, 𝑇𝑝) = 𝐴(𝜀)
5−𝑇𝑝
5
𝑇𝑒
𝛥𝑇
≈ 5𝑇𝑒
4𝐴(𝜀)
(S12)
16
which is proportional to the cooling-active part of the single-particle density of states. This result elucidates
the meaning of "electron-phonon cooling power spectrum", predicting that the cooling power exhibits a
resonance behavior as a function of 𝜀, which is due to an enhancement of phonon emission by trapping of an
electron on the quasibound state.
Factorization of the dissipated power 𝑃𝑒𝑝(𝜀) into a part due to the scatterer that mediates cooling and
a part due to hot electrons impinging on the scatterer is similar to that underlying the notion of scattering
cross-section introduced in the analysis of scattering probes to separate the properties of the target and the
source. We also emphasize that the cooling-active part of the single-particle density of states is distinct from
the total DOS measured by STM probes, since STM probes the density of all electronic states exposed at the
surface whereas our technique selects only the states that mediate electron-lattice cooling.
In the case (ii), where 𝑘𝐵𝑇, 𝑒𝑉 ≫ 𝛾, the scatterer energy dependence can be treated as a delta
function, which gives a simple expression
𝑃𝑒𝑝(𝜀) = ∫ 𝑑𝜔
∞
0
(𝑁𝜔,𝑒 − 𝑁𝜔,𝑝)(𝑛𝜀𝐿𝑆−𝜔 − 𝑛𝜀𝐿𝑆+𝜔)
𝑔2𝜔2𝜈2(𝜇)𝑣
𝛾𝑎
(S13)
where 𝑁𝜔,𝑒 and 𝑁𝜔,𝑝 are Bose functions evaluated at temperatures 𝑇𝑒 and 𝑇𝑝, respectively, and 𝑛𝜔 is
electron Fermi distribution. The result (S13) describes a peak of width 𝑇𝑒 or 𝑇𝑝, whichever is greater. In our
experiment the width of the resonance is on the order of 10 meV whereas electron temperature inferred
from Joule heat dissipated at the voltage bias values used in our measurement is a few times smaller. We
therefore expect the regime (i) to provide a better description of the measurement results than the regime
(ii).
5. Resonant states as a dominant source of dissipation in clean graphene
5.1. Thermal imaging at the flat-band condition
In order to understand the significance of the cooling pathway due to resonant LSs and to quantify its
overall contribution to dissipation we performed a set of measurements on a second sample (Sample 2) at a
flat-band condition that did not involve the "on" and "off" switching of the atomic sources during
measurement. The sample was patterned into a rectangular chamber with four constrictions (Fig. 4F), and a
tSOT of 48 nm effective diameter (~100 nm outer diameter) was used. A dc current 𝐼𝑑𝑐 = 1 μA rms chopped
at 35.5 Hz was applied between two of the constrictions as indicated by the arrows in Fig. 4F. In order to
reveal the thermal landscape unperturbed by the tip electrostatic potential we acquired 𝛿𝑇(𝑥, 𝑦) images at a
𝐹𝐵 as shown in Figs. 4G. The striking observation, which is prominent in Fig. 4G,
flat-band condition 𝑉𝑡𝑔 = 𝑉𝑡𝑔
was 𝛿𝑇(𝑥, 𝑦) enhanced along the edges of the rectangular chamber. Such behavior is observed at all the
positive and negative values of 𝑉𝑏𝑔 (Figs. 4G, S6A, S8A, and S9A) including the charge neutrality point (Fig.
S9A), providing strong evidence that the dissipation occurs predominantly at the graphene edges. The
reasoning leading to this conclusion is described below step by step. We note that since the flat-band
𝐹𝐵 depend on the position of the Fermi energy in graphene and hence on 𝑉𝑏𝑔 values, the flat-
conditions 𝑉𝑡𝑔
band value 𝑉𝑡𝑔 = 𝑉𝑡𝑔
𝐹𝐵(𝑉𝑏𝑔) was determined for each 𝑉𝑏𝑔 separately.
5.2. Numerical simulations
In order to understand what sources of dissipation could lead to 𝛿𝑇(𝑥, 𝑦) enhanced along the edges,
we performed COMSOL numerical simulations of diffusive heat flow using the Sample 2 shape and the
estimated values of 2000 W/m/K and 0.2 W/m/K for the heat conductivities of graphene and SiO2 substrate
at 4.2 K respectively (our qualitative conclusions weakly depend on these values). The thickness of graphene
in the simulation was taken as 50 nm for the reasons of practical convenience, electric and thermal
conductances were scaled by the physical thickness. Figure S6 presents the calculated surface temperature
distributions for four cases that describe four different cooling regimes:
17
i) Joule heating. A current of 1 µA is applied to the sample through two constrictions on the right as in
the experimental configuration. Self-consistent current distribution and the corresponding local dissipation
and heat diffusion were calculated numerically using a uniform sheet resistance value of 180 /□ in
graphene. The resulting calculated surface temperature distribution is presented in Fig. S6C. This case yields
a temperature map in agreement with expectations for the diffusive electron transport regime. The elevated
temperature in the constrictions results from their significantly higher resistance, which also gives rise to the
overall temperature gradient from right to left.
ii) Uniform bulk-dominated dissipation. Since the ballistic electron transport cannot be simulated in
COMSOL we study this regime by assuming for simplicity a uniform heat dissipation density of 80 pW/µm2 in
the entire area of the graphene heterostructure, which amounts to total heat power of 1.8 nW, a value equal
to that in case (i). Figure S6D shows the resulting temperature distribution which agrees with the behavior
expected for ballistic electron transport with a weak and homogeneous inelastic electron-phonon scattering
in the bulk. This case represents the behavior in the bulk of the rectangular chamber ignoring enhanced
heating in the constrictions due to the higher current density. The essential observation in cases (i) and (ii) is
that the temperature profile 𝛿𝑇(𝑥, 𝑦) through the bulk of the sample has a maximum in the central region as
shown by the red and cyan lines in Fig. S6B. A similar behavior is also expected in the case of hydrodynamic
electron flow in the presence of bulk-dominated inelastic electron-phonon scattering. The general reason for
temperature to peak away from the sample edges is that in the case of bulk dissipation the edges of the
sample will always be colder than the sample interior due to a more efficient cooling to the substrate along
the sample perimeter.
iii) Edge-dominated dissipation with diffusive heat propagation. We study edge-dominated dissipation
by carrying out simulations similar to case (ii) in which the same total power of 1.8 nW is dissipated at
discrete point defects positioned along the edges of the sample (spaced 250 nm apart, as marked by blue
points in Fig. S6E). Dissipated power was 12.7 pW per defect, and no dissipation in the bulk. The resulting
temperature distribution in Fig. S6E exhibits a pronounced minimum of 𝛿𝑇(𝑥, 𝑦) in the center of the sample
as seen by the blue profile in Fig. S6B. This is in stark contrast to the two bulk-dominated dissipation cases (i)
and (ii) characterized by temperature peaks at the sample center. We checked that the temperature
minimum is rapidly washed out upon adding a small bulk dissipation. The semblance to the pronounced
minimum at the center of the sample observed in experiment (green curve in Fig. S6B) suggests that
dissipation in clean encapsulated graphene is dominated by the edge defects and any bulk dissipation, if
present, is substantially weaker.
iv) Edge-dominated dissipation with ballistic phonon propagation. Interestingly, our measurement
results show a minimum in 𝛿𝑇(𝑥, 𝑦) that is even more pronounced than the simulated case of a pure edge
dissipation (see temperature profile displayed in Fig. S6B). We speculate that this finding points to the
ballistic propagation of emitted phonons. Indeed, in the case of heat propagation dominated by the 2D heat
flow in graphene, solution of diffusive 2D heat equations results in universal −log 𝑟 temperature decay away
from a point source. In contrast, in the 2D ballistic phonon regime the resulting phonon density decays much
faster, as 1/𝑟 from the point source, giving rise to steeper temperature decay. Physically, in clean samples at
low temperatures phonons are expected to propagate ballistically on our relevant length scales. In this case
the measured 𝛿𝑇(𝑥, 𝑦) should be thought of as a map of the excess power density of the vibrational modes
given by the local density of the excess phonons and by their energy. In order to simulate the ballistic
phonon regime we use a simple model temperature distribution of 𝛿𝑇(𝑟) = 𝛿𝑇0(1 + (𝑟/ℓ)2)−1/2 with
𝛿𝑇0 = 100 µK imposed around each defect (shown by the dashed 𝛿𝑇𝑜𝑛(𝑥) line in Fig. 3B). Here ℓ is a
characteristic length scale for the cut-off of the 1/𝑟 divergence determined by the diameter of the tSOT and
the scanning height above the graphene, which we took as ℓ = 100 nm. Figure S6F shows the resulting
𝛿𝑇(𝑥, 𝑦) given by superposition of such point sources positioned at the same locations as in Fig. S6E. As
illustrated in Fig. S6B, this simple model gives a good agreement with the experimental results, providing
strong support for the dissipation mechanism that is dominated by inelastic electron scattering by resonant
LSs at the clean graphene edge.
18
To simplify the analysis, in Fig. S6F we have assigned the same power dissipation to all the defects. In
reality, however, the LSs in the current-carrying constrictions will dissipate more power due to the larger
local current density resulting in higher collision rate of the electrons with the LSs. This will result in the
higher intensity of the rings in the constrictions and in their proximity as indeed clearly seen in Figs. 4G, S6A,
S8A, and S9A.
5.3. The density of cooling-active LSs at graphene edge
Figures 4G, S6A, S8A, and S9A demonstrate that edge-dominated dissipation is present at all values of
𝑉𝑏𝑔. Since each defect creates a dissipative resonant state at a specific energy, this observation implies that
different defects contribute to dissipation at different 𝑉𝑏𝑔. This is illustrated by a wide spread of resonance
energies in Fig. 4 in the main text. Signatures of a multitude of different LSs can be discerned also from the
measurements under the flat band condition. Indeed a closer inspection of Figs. 4G, S6A, S8A, and S9A shows
inhomogeneity in 𝛿𝑇(𝑥, 𝑦) along sample edges that changes upon varying 𝑉𝑏𝑔. In Fig. 4 our numerical
algorithm detected 135 LSs along 𝐿 = 3.5 µm along graphene edge in the energy window of ~260 meV (SM
section 10). Taking the spectral width of each LS to be about 13 meV (Fig. 2 and SM Section 9), this implies
that at any given 𝑉𝑏𝑔 there are about 7 out of 135 defects which are cooling-active. This corresponds to an
average separation of 500 nm for the active defects. Since our algorithm detects only a fraction of the LSs,
the actual density of the cooling-active LSs is probably somewhat greater. In simulations shown in Figs. S6E,F
we used point heat sources spaced by 250 nm.
5.4. Resolving localized states by 𝑽𝒃𝒈
𝒂𝒄 modulation
Since the temperature fields created by nearby LSs overlap, their individual contributions cannot be
readily resolved in the 𝛿𝑇(𝑥, 𝑦) images of Figs. 4G and S6A at a flat-band condition. Upon variation in 𝑉𝑏𝑔
some LSs move out of resonance, reducing their contribution to dissipation while at the same time other LSs
𝑎𝑐 = 0.1 V to
are shifted into resonance forming new point sources of dissipation. By applying an ac voltage 𝑉𝑏𝑔
𝑑𝑐 the details of this process can be resolved by imaging the
the back gate in addition to the dc 𝑉𝑏𝑔
𝑏𝑔(𝑥, 𝑦)
corresponding ac change 𝑇𝑎𝑐
𝑑𝑐 = –8 V and –6.7 V. The bright and dark spots that appear at random locations along
images acquired at 𝑉𝑏𝑔
𝑎𝑐
the edges of graphene reflect the LSs that are correspondingly shifted in and out of resonance by the 𝑉𝑏𝑔
𝑏𝑔(𝑥, 𝑦), namely in these regions the
change in 𝑉𝑏𝑔. Note that the dark spots correspond to negative 𝑇𝑎𝑐
dissipation decreases as 𝑉𝑏𝑔 increases, while in the bright spots 𝛿𝑇(𝑥, 𝑦) increases with 𝑉𝑏𝑔 giving rise to
𝑏𝑔(𝑥, 𝑦). This picture would look quite differently if the microscopic dissipation sources were
positive 𝑇𝑎𝑐
independent of 𝑉𝑏𝑔. In this case, instead of strong bright and dark spots we would see only a weak and
𝑏𝑔(𝑥, 𝑦) originating from the gate dependence of graphene resistivity.
smooth constant-sign background 𝑇𝑎𝑐
𝑏𝑔 in the local temperature. Figure S7 shows two examples of such 𝑇𝑎𝑐
5.5. Resolving individual LSs by tip gating
The above 𝑉𝑏𝑔
𝑎𝑐 method of imaging the resonant LSs is somewhat limited since it reveals only the states
that are close to resonance at a given 𝑉𝑏𝑔 , which makes resolving individual LSs that are located close to
each other a challenging task. However, by varying the tip potential 𝑉𝑡𝑔 and moving away from the flat-band
condition, a wide range of LSs can be individually resolved with very high spatial resolution. This enhanced
functionality arises from the fact that instead of imaging the net 𝛿𝑇(𝑥, 𝑦) which is a sum of contributions due
to all active LSs contributing to dissipation at a particular 𝑉𝑏𝑔, the local potential induced by the tip can be
used for selective and position dependent imaging of individual LSs. This is done by switching individual LSs
𝑇𝐹(𝑥, 𝑦) due to
in and out of resonance and measuring the corresponding change in the local temperature 𝑇𝑎𝑐
modulation of a single resonant state by the vibrating tip. The striking difference between 𝛿𝑇(𝑥, 𝑦) at a flat-
𝑇𝐹(𝑥, 𝑦) in the presence of tip potential is illustrated in
band condition and the local temperature change 𝑇𝑎𝑐
19
Fig. S8. While Fig. S8A clearly shows that the dissipation occurs predominantly along the graphene edges, the
presence of individual LSs cannot be discerned. Figure S8B, in contrast, reveals the high density of resonant
LSs at graphene edges with a wide-spread energy level distribution giving rise to numerous rings of different
𝑇𝐹(𝑥, 𝑦) imaging is the reason it is mainly the data
diameters. The wealth of information provided by the 𝑇𝑎𝑐
obtained by this method that are presented in the main text.
The amount of detail obtained by this method is illustrated in Figure S8 which provides an interesting
insight into the origin of dissipation enhancement in the current-carrying constrictions. In narrow
constrictions both the current density and the edge-to-bulk ratio are high. As a result the rates for electron
collision with the LSs and for the corresponding phonon emission are much higher than in the chamber,
resulting in enhanced heating in the two constrictions on the right that serve as current source and drain.
The high rate of phonon emission in the constrictions contributes to the overall right to left gradient in
𝛿𝑇(𝑥, 𝑦) within the chamber seen in Fig. S8A. This gradient is significantly enhanced near CNP as presented
in Fig. S9 and observed as the bright horizontal streaks in Figs. S11D and S11F around 𝑉𝑏𝑔 = 0. Interestingly,
the ballistic nature of electron transport in our clean graphene causes dissipation also within the two floating
constrictions on the left where no current flows. We interpret the ring structures seen in the floating
constrictions in Fig. S8B as being due to the hot carriers that travel ballistically across the chamber, enter the
constrictions and dissipate their energy while dwelling inside the constrictions.
5.6. Current dependence
The observed overall temperature increase in the sample arises predominantly from the phonons that
are emitted by the resonant LSs at graphene edges and propagate throughout the sample rather than being
generated in the bulk of graphene. In order to study the current dependence of the overall sample
temperature we carried out thermal imaging at flat-band condition as presented in Fig. S9. Temperature
profile across the sample along the dashed line in Fig. S9A was then acquired at different values of the
applied current 𝐼𝑑𝑐. Examples of the resulting 𝛿𝑇 profiles at different currents are presented in Figure S9B
showing the temperature increase with the current 𝐼𝑑𝑐. Figure S9C presents the average temperature 〈𝛿𝑇〉
2 behavior over a wide range of currents down to our
along the profiles vs. the current, showing 〈𝛿𝑇〉 ∝ 𝐼𝑑𝑐
lowest current of 20 nA. Such low currents are well comparable to the currents typically employed in
transport studies thus indicating the relevance of the observed dissipation mechanisms to the transport
properties of graphene.
6. Simulations of the electrostatic interaction between the tSOT and the sample
The powerful spectroscopic capabilities of the tSOT nanothermometry arise from the local electrostatic
interaction between the tip and sample. In this section we derive this interaction and provide some
simulations by numerical solution of Laplace's equation for the potential 𝜑(𝑟, 𝑧) in an axial-symmetric
geometry.
Our simulated space consisted of graphene residing in 𝑧 = 0 plane while the tSOT was modeled for
simplicity as a disc with outer diameter 𝑑0 and thickness 𝑡 located at a height 𝑧𝑡𝑖𝑝 above the graphene. A
fixed voltage boundary condition of 𝑉𝑡𝑔 was applied to the disc and a fixed voltage boundary condition of Vbg
was applied at 𝑧 = −𝑑𝑏𝑔 to account for the back gate. The entire space above and below the graphene was
taken to be homogeneous with dielectric constant 𝜖 to simplify the numerics. Zero Neumann boundary
conditions were used at large 𝑟 and 𝑧. The surface charge density 𝜎(𝑟) in the graphene at 𝑧 = 0 was solved
self-consistently as follows. The tip potential induces a local band bending 𝐸𝐷(𝑟) of the graphene Dirac
energy and changes the local chemical potential 𝜇(𝑟) = 𝐸𝐹 − 𝐸𝐷(𝑟), while the electro-chemical potential 𝐸𝐹
remains constant throughout the graphene and fixed to 𝐸𝐹 = 0. Unlike in an ideal metal, a finite in-plane
field can be present in graphene. Equilibrium conditions require that a test charge experiences a zero net in-
plane force. This dictates that the in-plane field is balanced by the gradient of the chemical potential, which
results in a boundary condition 𝐸𝐷(𝑟) = −𝑒𝜑(𝑟, 𝑧 = 0) + 𝐸𝐷,∞, where 𝐸𝐷,∞ is the global band bending due
20
to the back-gate voltage 𝑉𝑏𝑔. Considering the Dirac density of states 𝐷(𝜀) = 𝜕𝑛/𝜕𝜀 = 2𝜀(√𝜋ℏ𝑣𝐹)
(where
𝜀 = 𝐸𝐹 − 𝐸𝐷) and the geometrical capacitance between the two parallel plates (graphene and back gate) it
is straightforward to derive at analytic expression 𝐸𝐷,∞ = −𝑠𝑖𝑔𝑛(𝑉𝑏𝑔)√𝜋ℏ𝑣𝐹√𝑛∞, where:
−2
𝑛∞ = (√(𝜖𝜖0√𝜋ℏ𝑣𝐹
2𝑒2𝑑𝑏𝑔
2
)
+ 𝜖𝜖0
𝑒∙𝑑𝑏𝑔
𝑉𝑏𝑔 − 𝜖𝜖0√𝜋ℏ𝑣𝐹
2𝑒2𝑑𝑏𝑔
)
2
On the other hand, 𝜎(𝑟) is determined by 𝐸𝐷(𝑟) through 𝐷(𝜀), resulting in 𝜎(𝑟) that is given by the
relation 𝐸𝐷(𝑟) − 𝐸𝐹 = sign(𝜎(𝑟))√𝜋/𝑒ℏ𝑣𝐹√𝜎(𝑟), resulting in a closed set of equations that can be self-
consistently solved.
In the simulation results of Fig. S10 the following parameter values were used: outer tip diameter 𝑑0 =
50 nm, tip thickness 𝑡 = 5 nm, 𝜖 = 3, 𝑣𝐹 = 106 m/s, 𝑑𝑏𝑔 was set to 125 nm to match the experimentally
derived 𝐶𝑏𝑔 (see Section 1 above), and 𝑧𝑡𝑖𝑝 was set to 57 nm to attain comparable 𝐶𝑡𝑔 and 𝐶𝑏𝑔 capacitances
as in the experiment. The graphene band bending 𝐸𝐷(𝑥) is shown in Fig. S10A for tip potential 𝑉𝑡𝑔 = −1.5 V
for various back gate voltages 𝑉𝑏𝑔. The 𝐸𝐷(𝑥) curve in Fig. 3 and Movie S3 was derived for 𝑉𝑡𝑔 = −3 V and
𝑉𝑏𝑔 = 0.25 V. The strongest tip-induced band bending occurs when 𝐸𝐷(𝑥) crosses zero where the graphene
is incompressible. At high values of 𝑉𝑏𝑔 the bending is reduced due to a more effective screening. Figure
S10B shows similar results for a constant 𝑉𝑏𝑔 = 1 V and different values of 𝑉𝑡𝑔. From these results we can
calculate the evolution of the radius 𝑅 of the dissipation ring assuming that the LS is pinned to the Dirac
point, 𝐸𝐿𝑆 = 𝐸𝐷(𝑥), where 𝑥 is the tip distance to the defect, and the carriers are injected close to the Fermi
energy 𝐸𝑒 ≅ 𝐸𝐹 = 0. Figure S10C shows the resonant dissipation traces as a function of 𝑉𝑡𝑔 for various
values of 𝑉𝑏𝑔 akin the experimental results in Figs. S11A-C. The points along the traces indicate the lateral
displacement 𝑥 of the tSOT from the defect at which resonant conditions for inelastic scattering are met for
various values of 𝑉𝑡𝑔 and 𝑉𝑏𝑔. For example, for 𝑉𝑏𝑔 = 1 V, as described in Fig. S10B, the resonant conditions
occur only for negative 𝑉𝑡𝑔 < −1 V for which 𝐸𝐷(𝑥) crosses 𝐸𝐹 = 0. The distance 2𝑅 between the crossing
points grows with decreasing 𝑉𝑡𝑔 resulting in the resonance trace marked by an arrow in Fig. S10C. Figure
S10D presents the resonant bell-shaped traces as a function of 𝑉𝑏𝑔 for various values of 𝑉𝑡𝑔 describing the
experimental results in Figs. 4A-C.
7. Search for additional energy levels of the localized state
In this section we provide additional information on the spectroscopic analysis of bulk defects and
explore the widest energy range for searching for additional possible energy levels of the LS. By repeatedly
scanning the tSOT along the line crossing defect 'C' and incrementing 𝑉𝑡𝑔 we derive the resonant traces
describing the evolution of the radius of the dissipation ring 𝑅(𝑉𝑡𝑔) as shown in Figs. S11A-C. These traces
correspond to the numerical results presented in Fig. S10C. In the case of 𝑉𝑏𝑔 = 2.5 V (Fig. S11C), the
concave trace reflects the situation exemplified in Fig. 3 where in absence of tip potential, 𝐸𝐿𝑆 resides below
𝐸𝐹 and hence the LS is occupied and does not dissipate until a negative 𝑉𝑡𝑔 brings it into resonance with 𝐸𝑒.
For 𝑉𝑏𝑔 = − 1 V (Fig. S11A), the opposite situation occurs in which the empty state does not dissipate
because it is well above 𝐸𝑒 and a positive 𝑉𝑡𝑔 is required for bringing it into resonance resulting in a convex
trace. The transition from convex to concave traces upon varying 𝑉𝑏𝑔 is presented in Fig. S11B and Movie S4.
Alternatively, the tSOT can be scanned through the defect while incrementing 𝑉𝑏𝑔 at constant 𝑉𝑡𝑔 (Figs.
𝐿𝑆 as expected
4A-C and Movie S5). In this case the traces are bell-shaped, in which 𝑅 diverges when 𝑉𝑏𝑔 = 𝑉𝑏𝑔
(Fig. S10D). Figures S11D and S11F show the bell-shaped resonance traces at 𝑉𝑡𝑔 = 10 V and 𝑉𝑡𝑔 = −10 V
over the entire range of 𝑉𝑏𝑔 = ±10 V. Traces at various intermediate values of 𝑉𝑡𝑔 are presented in Fig.
S11E. These data are summarized in Fig. S11G showing the ring radius 𝑅 in the 𝑉𝑏𝑔-𝑉𝑡𝑔 plane. In the white
areas no dissipation is present since 𝐸𝐿𝑆 is far from resonance. In the colored regions inelastic scattering
21
occurs depending on the tip position. The transition line (dark blue) maps the resonant conditions when the
tip is positioned directly above the defect (𝑅 = 0) as in Fig. 2D, while the red color reflects the conditions for
𝐹𝐵 at which 𝑉𝑡𝑔 corresponds to flat-
diverging 𝑅. The black dot describes the bare resonance point 𝑉𝑏𝑔
band conditions of the tip and 𝑉𝑏𝑔 aligns 𝐸𝐿𝑆 with 𝐸𝑒 ≅ 𝐸𝐹 in absence of tip potential. This is the point at
𝐿𝑆 describes the position of the LS energy level 𝐸𝐿𝑆.
which the resonant traces switch their polarity and 𝑉𝑏𝑔
The slope of the 𝑅 = 0 resonance line in Fig. S11G (dark blue) describes the ratio between the back
gate and the tip capacitances 𝐶𝑏𝑔/𝐶𝑡𝑔 that is affected by the tip height ℎ as described in Section 6 above.
With 𝐶𝑏𝑔 = 1.25 ∙ 1011 1/cm2V attained from the magneto-transport data of Section 1, we derive
𝐶𝑡𝑔 = 1.3 ∙ 1011 1/cm2V at ℎ = 12 nm.
𝐿𝑆, 𝑉𝑡𝑔
𝑚𝑎𝑥 and ±𝑉𝑏𝑔
𝑚𝑎𝑥 + 𝐶𝑏𝑔𝑉𝑏𝑔
The fact that only a single resonance trace is visible in Figs. S11D and S11F shows that the LS has just
𝑚𝑎𝑥. This translates into a range of carrier concentrations of
one energy level in this range of ±𝑉𝑡𝑔
𝑚𝑎𝑥) = ±2.6 ∙ 1012 cm-2 and corresponding energy span of ±186 meV. These results
±(𝐶𝑡𝑔𝑉𝑡𝑔
show that the LS has just a single energy level 𝐸𝐿𝑆 near the Dirac point with no additional levels in the range
of at least Δ𝐸 = ±186 meV from 𝐸𝐷. Considering the LS as a quantum dot, the single electron changing
energy and hence the corresponding energy level separation is given by Δ𝐸 ≅ 𝑒2 (4𝜋𝜀ℎ𝐵𝑁𝜀0𝑑𝐿𝑆)
where 𝑑𝐿𝑆
is the diameter of the LS and 𝜀ℎ𝐵𝑁 ≅ 3 is the dielectric constant of hBN. Taking the lower bound estimate of
Δ𝐸 ≥ 186 meV we attain the maximal effective size of the LS 𝑑𝐿𝑆 ≤ 2.4 nm.
⁄
8. Derivation of the local CNP and of the energy level 𝑬𝑳𝑺 of bulk localized state
The LS resonance line in Fig. 2D provides a valuable tool for determining the local charge neutrality
𝐿𝑆. To describe the derivation
point (CNP) in terms of 𝑉𝑏𝑔
method we carry out numerical simulations of the resonance line, which is the critical line at which the
dissipation ring nucleates from 𝑅 = 0.
𝐶𝑁𝑃 and the energy level 𝐸𝐿𝑆 of the LS in terms of 𝑉𝑏𝑔
We first assume that the LS is pinned to the Dirac point, 𝜀𝐿𝑆 = 𝐸𝐿𝑆 − 𝐸𝐷 = 0. In this case the resonance
curve is defined by the geometric place of all the 𝑉𝑏𝑔, 𝑉𝑡𝑔 pairs for which the 𝐸𝐷(𝑥) profile at the tip location
𝑥 = 0 is tangent to the Fermi energy 𝐸𝐹 = 0 as shown in Fig. S12A, such that the impinging electrons with
energy 𝐸𝑒 ≅ 𝐸𝐹 are at resonance with the LS. The resulting 𝑅 = 0 resonance curves are shown in Fig. S12B
for various heights 𝑧𝑡𝑖𝑝 of the tip above the graphene. The slope of the curves away from the CNP reflects
the ratio between the effective capacitances 𝐶𝑏𝑔/𝐶𝑡𝑔 of the back and tip gating and is thus affected by 𝑧𝑡𝑖𝑝.
𝐹𝐵 which depends on its
The intersection point of the curves is given by the flat-band condition of the tip 𝑉𝑡𝑔
𝐹𝐵 the tip has no effect on the sample, 𝐸𝐷(𝑥) is
work function and is taken to be zero in the simulations. At 𝑉𝑡𝑔
𝐿𝑆 independent of the tip height. The crossing point thus
constant, and the resonance occurs at 𝑉𝑏𝑔 = 𝑉𝑏𝑔
𝐿𝑆.
determines the energy of the LS in terms of 𝑉𝑏𝑔
The resonance curves are not straight and show a kink which is clearly resolved by plotting the
derivatives of the curves (Fig. S12C). This kink is the result of the quantum capacitance and reflects the
change in effectiveness of graphene in screening the tip potential at different 𝑉𝑏𝑔. The kink occurs at the
𝐶𝑁𝑃, which is taken to be zero in the simulations, and is defined by the location of
charge neutrality point 𝑉𝑏𝑔
𝐶𝑁𝑃 = 0 and hence the
the minimum of the 𝑑𝑉𝑡𝑔/𝑑𝑉𝑏𝑔 curves (Fig. S12C). In the 𝜀𝐿𝑆 = 0 case, 𝑉𝑏𝑔
crossing point of the resonance curves coincides with the kink location, however, in the general case these
two features are separated as demonstrated in Figs. S12D-F for 𝜀𝐿𝑆 = 30 meV. Here the crossing point of the
𝐿𝑆, while the kink is fixed
curves is determined by the top-gate flat-band condition 𝑉𝑡𝑔
by the back gate CNP, 𝑉𝑏𝑔
𝐹𝐵 = 0 at which 𝑉𝑏𝑔 = 𝑉𝑏𝑔
𝐶𝑁𝑃 = 0 (Figs. S12E-F).
𝐿𝑆 = 𝑉𝑏𝑔
In the experimental resonance lines of defect 'C' in Fig. S13D (and their derivative in Fig. S13E) the two
𝐶𝑁𝑃 ≅ 480 mV. From these two values we
𝐿𝑆 ≅ 200 mV and 𝑉𝑏𝑔
features are well resolved with resulting 𝑉𝑏𝑔
derive the energy level of the LS to be
22
𝜀𝐿𝑆 = 𝐸𝐿𝑆 − 𝐸𝐷 = 𝑠𝑖𝑔𝑛(𝑉𝑏𝑔
𝐶𝑁𝑃 ≅ −22 meV.
𝐿𝑆 − 𝑉𝑏𝑔
𝐶𝑁𝑃)√𝜋/𝑒ℏ𝑣𝐹√𝐶𝑏𝑔𝑉𝑏𝑔
𝐿𝑆 − 𝑉𝑏𝑔
Figures S13A-C show the corresponding numerical simulations for the case of 𝜀𝐿𝑆 = −20 meV reproducing
the experimental features. In order for the LS to be at resonance with the electrons at 𝐸𝐹 the tip potential
has to induce 𝐸𝐷(𝑥) profile such that 𝐸𝐷(0) − 𝐸𝐹 = 20 meV (Fig. S13A).
Theoretical calculations and STM studies (13, 14, 16, 17) show that carbon vacancies and monovalent
adatoms form LSs close to the Dirac point consistent with our findings. In particular, hydrogen atoms on
graphene were shown (13, 14) to give rise to sharply localized state at 30 meV below the Dirac point. Our
derived 𝜀𝐿𝑆 ≅ −22 meV thus raises the possibility that the observed resonant inelastic scattering in the bulk
of graphene may arise from individual hydrogen adatoms.
𝐶𝑁𝑃 and 𝑉𝑏𝑔
Note that in graphene heterostructures the CNP is known to be hysteretic with respect to 𝑉𝑏𝑔.
𝐿𝑆 are slightly dependent on the span of previously applied 𝑉𝑏𝑔 and on its sweep
𝐿𝑆 in Figs. 4A-C and S11A-C. Since 𝜀𝐿𝑆 is determined
𝐶𝑁𝑃 the above described procedure diminishes the effect of hysteresis by
Accordingly, 𝑉𝑏𝑔
direction, giving rise to small variations in the apparent 𝑉𝑏𝑔
only by the difference 𝑉𝑏𝑔
measuring the two quantities in a single continuous 𝑉𝑏𝑔 sweep.
𝐿𝑆 − 𝑉𝑏𝑔
The bulk defects are extremely rare in high quality encapsulated graphene. Besides the three defects in
Sample 1 we found only four additional bulk defects in other samples, while in some of the samples, like
Sample 2, we could not resolve any bulk defects. From this limited statistics we can estimate the average
areal density of 2∙105 cm-2 of bulk defects in graphene. Such a low density and their atomic nature may
indicate that the bulk defects are not formed during the sample fabrication process but rather originate from
native defects in the parent graphite with a corresponding concentration of 5∙10-5 ppm. The spectral
properties of bulk defect 'C' were thoroughly investigated as presented here. The spectral properties of the
other six defects were attained by measurements similar to those presented in Movies S4-5. From these
assessments we conclude that for all bulk defects the LS energy level resides within at most 50 meV from the
Dirac point, pointing to a common chemical or structural origin in form of carbon vacancies or hydrogen
adatoms.
9. Experimental derivation of the electron-phonon cooling power spectrum
Our thermal spectroscopy allows evaluation of the broadening 𝛿𝐸 of the energy level of the LS and
derivation of its electron-phonon cooling power spectrum (CPS), 𝑃𝑒𝑝(𝜀), as follows. For a LS that is pinned to
the Dirac point, 𝐸𝐿𝑆 = 𝐸𝐷, a finite spectral width 𝛿𝐸 of the LS translates into a finite width of the back gate
voltage 𝛿𝑉𝑏𝑔, 𝛿𝐸 = 2√𝜋/𝑒ℏ𝑣𝐹√𝐶𝑏𝑔𝛿𝑉𝑏𝑔/2, over which the dissipation occurs. This broadening translates
into a finite width 𝛿𝑥 = 𝛿𝑉𝑏𝑔/(𝑑𝑉𝑏𝑔 𝑑𝑥⁄
) of the dissipation ring as described in Fig. S14. In addition to the
intrinsic broadening, however, there is an extrinsic broadening due to a finite energy distribution of the
injected energetic carriers and the tSOT modulation 𝑥𝑎𝑐 by the TF.
In order to assess the extrinsic broadening and to minimize its contribution we performed the
measurements presented in Fig. S14. Figure S14A shows the bell-shaped dissipation trace of defect 'B' at
𝑉𝑡𝑔 = −10 V. The back-gate voltage was then fixed to 𝑉𝑏𝑔 = 5.3 V, where the slope of the bell-shaped trace
was 𝑑𝑉𝑏𝑔 𝑑𝑥⁄ = 47 mV/nm, as shown in Fig. S14A. Next, we performed line scans through the LS and
measured the width of the ring 𝛿𝑥 (Fig. S14D) as a function of the rms amplitude of the tip oscillation 𝑥𝑎𝑐 as
shown in Fig. S14B. The resulting 𝛿𝑥 decreases linearly with decreasing 𝑥𝑎𝑐, as expected when tip oscillation
is larger than the intrinsic width of the ring, and saturates for 𝑥𝑎𝑐 ≲ 1.5 nm. The average energy of the
injected electrons 𝜀𝑒 = 𝐸𝑒 − 𝐸𝐷 and the width of their energy distribution, which should be comparable to
𝜀𝑒, are determined by 𝑅𝑐 and the dc current 𝐼𝑑𝑐, 𝜀𝑒 = 𝑒𝑅𝑐𝐼𝑑𝑐, where 𝑅𝑐 = 890 Ω is the resistance of the
constriction at 𝑉𝑏𝑔 = 5.3 V (see Fig. S1). Figure S14C shows that the ring width 𝛿𝑥 decreases with decreasing
𝐼𝑑𝑐 and saturates for 𝐼𝑑𝑐 ≲ 5 µA. The corresponding dissipation ring measured in the limit of low tip
23
oscillation of 𝑥𝑎𝑐 = 0.5 nm and low current 𝐼𝑑𝑐 = 2 µA is presented in Fig. S14D (note the 𝑇𝑎𝑐 scale of just 1
µK). The cross section 𝑇𝑎𝑐(𝑥) of the ring (Fig. S14E) shows ring width of 𝛿𝑥 = 7 nm.
After minimizing the extrinsic contributions to the broadening, we can directly derive the CPS from the
spectroscopic thermal signal, 𝑃𝑒𝑝(𝜀) ∝ 𝛿𝑇(𝜀). To attain this, we integrate the 𝑇𝑎𝑐(𝑥) profile of Fig. S14E to
derive 𝛿𝑇(𝑥) = ∫ 𝑑𝑥′𝑇𝑎𝑐(𝑥′)
/𝑥𝑎𝑐, and use coordinate transformation to translate the lateral tip position 𝑥
𝑥
is determined from Fig. S14A, the origin of 𝑥 is defined in Fig. S14E, and 𝑉𝑏𝑔
into the induced energy shift of the LS given by 𝜀 = √𝜋/𝑒ℏ𝑣𝐹√𝐶𝑏𝑔𝑉𝑏𝑔
𝐶𝑁𝑃 was taken
𝑑𝑉𝑏𝑔 𝑑𝑥⁄
from Section 8 above. The resulting 𝛿𝑇(𝜀) is presented in Fig. S14F and describes the CPS of the LS,
𝑃𝑒𝑝(𝜀) ∝ 𝛿𝑇(𝜀), which shows a sharp peak with spectral width of 𝛿𝐸 = 13 meV. Since 𝜀𝑒 = 𝑒𝑅𝑐𝐼𝑑𝑐 = 1.8
meV ≪ 𝛿𝐸, the observed 𝛿𝐸 reflects an upper bound on the intrinsic broadening of the energy level of the
LS. The derived 𝑃𝑒𝑝(𝜀) is presented in Fig. 2F.
𝐿𝑆 − 𝑉𝑏𝑔
, where
𝐿𝑆 − 𝑉𝑏𝑔
𝐶𝑁𝑃 + 𝑥 𝑑𝑉𝑏𝑔 𝑑𝑥⁄
10. Analysis of localized states along the graphene edges
The numerous LS along the graphene edges were analyzed as described in Fig. S15. The tSOT was
scanned along the bottom edge of the graphene sample and the bell-shaped resonance traces were acquired
by sweeping the back gate 𝑉𝑏𝑔 at various 𝑉𝑡𝑔 (see Movie S6). Figure S15A shows the data at 𝑉𝑡𝑔 = − 10 V
reproduced here from Fig. 4 for clarity. Figure S15B presents the same data with overlaid fits to the traces
𝐶𝑁𝑃 + 𝑉𝑝/(1 + (𝑥 − 𝑥𝑖)2/𝑤2) with four fitting parameters:
(black) of empirical form 𝑉𝑏𝑔(𝑥) = 𝑉𝑏𝑔
𝐶𝑁𝑃 is the 𝑉𝑏𝑔 value corresponding to the energy 𝐸𝐿𝑆 of the LS, 𝑉𝑝 describes the height of the bell
𝑉𝑏𝑔
shape determined by 𝑉𝑡𝑔, 𝑤 is the width of the bell shape governed by the scanning height ℎ of the tSOT,
and 𝑥𝑖 is the location of the LS along the edge.
𝐿𝑆 − 𝑉𝑏𝑔
𝐿𝑆 − 𝑉𝑏𝑔
Our numerical algorithm detected 𝑚 = 135 traces along 𝐿 = 3.5 µm long graphene edge which reflects
only a fraction of the total number of LSs. The average density of the identified LSs is 𝜌 = 𝑚/𝐿 = 38.6 µm-1
corresponding to average distance of 〈∆𝑥〉 = 26 nm. Analysis of the distances ∆𝑥𝑛𝑛 between the nearest
neighbors (Fig. S15C) reveals that the probability density of ∆𝑥𝑛𝑛 is described by Poisson distribution
𝑃(∆𝑥𝑛𝑛) = 𝜌𝑒−∆𝑥𝑛𝑛𝜌 (black curve) indicating that LSs are distributed randomly, excluding presence of
clustering or long-range spatial correlations. Interestingly, Fig. S15E shows ∆𝑥𝑛𝑛 separations of down to
below 1 nm putting an upper bound on the spatial extent of the individual LSs and emphasizing the atomic-
scale nature of the defects.
Figure S15D presents the 𝑉𝑏𝑔
𝐿𝑆 values of the different LSs that shows a very wide distribution with no
apparent correlations. Such a large random variability over very short length-scales is inconsistent with the
𝐿𝑆 result from formation of "puddles" due to long-range substrate potential
possibility that the variations in 𝑉𝑏𝑔
𝐿𝑆 values appear to be uniformly
disorder (21) and support the Coulomb repulsion scenario. Moreover, the 𝑉𝑏𝑔
distributed, without visible clustering around specific values that may characterize particular adatom defects.
Chemical variability of adatoms is therefore not a likely explanation of the large variability of the energy of
𝐿𝑆 (Fig. S15E) reaches ±15 V, limited by
the LSs. The difference in 𝑉𝑏𝑔
our accessible 𝑉𝑏𝑔 span, and seems to be independent of the distance ∆𝑥𝑛𝑛 between the neighbors from sub
nm to 100 nm distances. Note, however, that we analyze only a fraction of the defects. Remarkably, we
𝐿𝑆
detect neighboring defects that are separated on nm scale while showing variation of up to 10 V in their 𝑉𝑏𝑔
energy. Examples of such pairs of nearest neighbors are marked in color in Fig. S15B. The green traces show
an example of five LSs within a segment of 8 nm along the graphene edge with significantly different
energies.
𝐿𝑆 between the nearest neighbors ∆𝑛𝑛𝑉𝑏𝑔
24
Supplementary Figures
Figure S1. Magneto-transport characterization of the graphene sample.
Four-probe measurement of 𝑅𝑥𝑥 of the top constriction of the sample in Fig. 1B vs. back gate voltage 𝑉𝑏𝑔
and the perpendicularly applied magnetic field 𝐻 at 𝑇 = 4.2 K, showing quantum Hall oscillations. A linear fit
to the QH minima results in back gate capacitance of 𝐶𝑏𝑔 = 2 ∙ 10−4 F/m2.
25
Vbg[V]μ0H[T]Change colormap
Figure S2. tSOT characterization.
(A) SEM image of the tSOT used in this work showing two Pb leads connecting to the Pb ring at the apex of
the tip and the gap between them. (B) SEM image of the tSOT pipette attached to one tine of the quartz
tuning fork. (C) I-V characteristics of the tSOT at 4.2 K and various applied magnetic fields. The inset shows a
simplified measurement circuit which includes the bias source 𝑉𝐵𝐼𝐴𝑆, bias resistors 𝑅𝑏1 = 𝑅𝑏2 = 11 k,
shunt resistor 𝑅𝑠 = 5.4 , parasitic resistance 𝑅𝑝 = 0.6 , and the inductively coupled SSAA. (D) Quantum
interference pattern of the critical current 𝐼𝑐(𝐻) showing a period of 2.4 T corresponding to effective
diameter 𝑑 = 33 nm of the tSOT. The higher lobes of the interference pattern are suppressed by 𝐻𝑐2 of Pb.
26
Rb1Rb2RsVBIASSSAAItSOTRPtSOTVtSOTVbias_wp=-3Vnoise=9.7908 pA/sqrt(Hz)thermal response is 19.7572 uA/Kthermal noise is 0.49556 uK/sqrt(Hz)μ0H [T]Ic[μA]D50 nmAPbPbgap50 μmBtuning forktSOTVtSOT[μV]ItSOT[μA]C
Figure S3. Demonstration of simultaneous measurement by three thermal imaging methods.
𝑇𝐹(𝑥, 𝑦) image of the left part of Sample 2 revealing the dissipation rings along the edges of
(A) 𝑇𝑎𝑐
hBN/graphene/hBN heterostructure (dashed). The arrow indicates the current 𝐼𝑑𝑐 (chopped at 35.5 Hz) that
flows from the right side of the sample into the constriction. (B) Zoomed-in thermal image 𝛿𝑇(𝑥, 𝑦) of a
𝑇𝐹(𝑥, 𝑦)
dissipation ring marked by dashed square in (A). (C) Simultaneously measured ac thermal image 𝑇𝑎𝑐
𝑡𝑔(𝑥, 𝑦) due
due to 𝑥𝑎𝑐 tip oscillation by the TF, 𝑇𝑎𝑐
𝑎𝑐𝑑𝑇(𝑥, 𝑦)/𝑑𝑉𝑡𝑔. Scan parameters: (A) Scan area 1.4 3.9 µm2,
to 𝑉𝑡𝑔
pixel size 13 nm, scan-speed 200 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = -2 V, 𝑉𝑡𝑔 = 2 V, 𝐼𝑑𝑐 = 2 µA rms chopped at 35.5
Hz, 𝑥𝑎𝑐 = 1.4 nm. (B-D) Scan area 400 410 nm2, pixel size 3.3 nm, scan-speed 250 ms/pixel, ℎ = 20 nm,
𝑎𝑐 = 0.1 V at
𝑉𝑏𝑔 = 0 V, 𝑉𝑡𝑔 = 5 V, 𝐼𝑑𝑐 = 1 µA rms chopped at 35.5 Hz, 𝑥𝑎𝑐 = 1.5 nm at 4.5 to the 𝑥 axis, 𝑉𝑡𝑔
3.06 kHz.
𝑇𝐹(𝑥, 𝑦) = 𝑥𝑎𝑐𝑑𝛿𝑇(𝑥, 𝑦)/𝑑𝑥. (D) The ac thermal image 𝑇𝑎𝑐
𝑎𝑐 tip gate modulation, 𝑇𝑎𝑐
𝑡𝑔(𝑥, 𝑦) = 𝑉𝑡𝑔
27
δT[mK]B40 nm𝑇𝑎𝑐𝑇𝐹[µK]C𝑇𝑎𝑐𝑡𝑔[μK]DA500 nm𝑇𝑎𝑐𝑇𝐹[µK]Idc
Figure S4. Measurement of the tSOT vibration amplitude.
(A) Optical image of Sample 2 showing the etched hBN/graphene/hBN heterostructure (bright) on SiO2
substrate (dark). A dc current 𝐼𝑑𝑐 = 4 μA rms chopped at 35.5 Hz was applied as indicated by the arrows. (B)
Thermal 𝛿𝑇(𝑥, 𝑦) image of the constriction region marked by the dashed square in (A). (C,D) Numerical
derivatives 𝜕𝛿𝑇 𝜕𝑥⁄
of image (B). (E) Best fit linear combination of (C) and (D),
𝑇𝐹(𝑥, 𝑦) image (F) providing the tSOT vibration of
𝑥𝑎𝑐 𝜕𝛿𝑇(𝑥, 𝑦) 𝜕𝑥⁄ + 𝑦𝑎𝑐 𝜕𝛿𝑇(𝑥, 𝑦) 𝜕𝑦⁄
, to the measured 𝑇𝑎𝑐
𝑇𝐹(𝑥, 𝑦) measured simultaneously with (B) at TF excitation 𝑉𝑇𝐹 =
𝑥𝑎𝑐 = 4.05 nm and 𝑦𝑎𝑐 = 0.31 nm. (F) 𝑇𝑎𝑐
2 vs. 𝑉𝑇𝐹 (blue dots) and a linear
1.66 mV. (G) The measured rms tSOT vibration amplitude 𝑟𝑎𝑐 = √𝑥𝑎𝑐
fit (red) with slope of 2.41 nm/mV. Scan parameters of (B,F): Scan area 22 µm2, pixel size 20 nm, scan-speed
80 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = -2 V, 𝑉𝑡𝑔 =-0.53 V corresponding to 𝑉𝑡𝑔
𝐹𝐵 at this 𝑉𝑏𝑔.
and 𝜕𝛿𝑇 𝜕𝑦⁄
2 + 𝑦𝑎𝑐
28
400 nmBδT[mK] δ D400 nmF400 nm𝑇𝑎𝑐𝑇𝐹[µK]E400 nmrac∙ δ [µK] δ C400 nm𝜕𝜕𝑥𝜕𝜕𝑦rac[nm]VTF[mV]GIdc500 nmAIdcver2
Figure S5. Electron-phonon cooling power spectrum of a single defect.
Cooling power spectrum of a quasi-bound state,𝑃𝑒𝑝(𝜀) , calculated from Eq. (S11) for three indicated values
of 𝜀𝐿𝑆 (left axis) and the experimental 𝛿𝑇(𝜀) ∝ 𝑃𝑒𝑝(𝜀) of defect 'C' (right axis) as a function of the Fermi
energy 𝜀. Parameters of Eq. (S11): 𝑇𝑝 =4.2 K, 𝑇𝑒 =5.2 K, ln(𝑊 𝑣𝑘𝑝
)=5.6.
⁄
29
𝛿𝑇𝜀[µK] ∝ 𝑃𝑒𝑝𝜀𝑃𝑒𝑝𝜀[pW]𝜀[meV]𝜀𝐿𝑆[meV]
Figure S6. Edges as dominant source of dissipation in hBN/graphene/hBN.
(A) Thermal image 𝛿𝑇(𝑥, 𝑦) of Sample 2 at tSOT flat-band condition as described in Figs. 4F,G but at 𝑉𝑏𝑔 = -6
V revealing dissipation along the graphene edges. Scan area 4.7 3.7 µm2, pixel size 50 nm, scan-speed 200
𝐹𝐵 at this 𝑉𝑏𝑔. (B)
ms/pixel, ℎ = 20 nm, 𝐼𝑑𝑐 = 1 μA rms chopped at 35.5 Hz, 𝑉𝑡𝑔 =-1.08 V corresponding to 𝑉𝑡𝑔
Temperature profiles taken along the vertical dashed lines comparing Joule-heating simulation (C – red),
uniform bulk heating simulation (D – cyan), edge point sources with diffusion model (E – blue), edge point
sources with ballistic 2D phonons (F – black), and the experimental profile (A – green). (C-E) 3D heat flow
simulations of surface temperature of graphene flake on SiO2 substrate shaped as in experiment for three
cases of heat sources. (C) Joule heating: A current of 1 μA is injected into the graphene through the right
constrictions as in experiment. A sheet resistance of 180 /□ is assigned to the graphene and the current
density is solved. The current density is used as a heat source (resulting in a total heat load of 1.8 nW) to
solve for the 3D heat flow problem. (D) Surface temperature from the solution of a heat flow problem with
uniform power density dissipated in the graphene with the same total power as in (C). (E) Surface
temperature from the solution of a diffusive heat flow problem with heat injected at discrete points (blue)
along the edges with the same total power as in (C). (F) Surface temperature attained by superposition of
thermal profiles of the form 𝑇(𝑟) ∝ (1 + (𝑟/ℓ)2)−1/2 around each marked point (blue) representing the
case of 2D ballistic phonons emitted from point sources along the sample edges.
30
ExperimentNumerical simulations500 nmDδT[μK]500 nmCδT[μK]δT[μK]500 nmEδT[μK]500 nmF500 nmVbg=-6 VAδT[μK]Joule diss. (sim.)Uniform bulk (sim.)Edge diss. diffusion (sim.)Experimenty[μm]δT[μK]BEdge diss. ballistic (sim.)
𝒂𝒄 .
Figure S7. Resolving resonant dissipation sources by ac back-gate voltage modulation 𝑽𝒃𝒈
𝑎𝑐 = 0.1 V rms at 322 Hz is applied to the back gate in addition to 𝑉𝑏𝑔
𝑏𝑔(𝑥, 𝑦) in presence of 𝐼𝑑𝑐 = 6 µA injected as indicated in Fig. 4F. An ac modulation
(A) Thermal image 𝑇𝑎𝑐
𝑑𝑐 = –8 V, 𝑉𝑡𝑔 =-1.35 V corresponding
𝑉𝑏𝑔
𝐹𝐵 at this 𝑉𝑏𝑔. The
to 𝑉𝑡𝑔
bright and dark spots reveal the LSs that are shifted in and out of resonance by the back gate modulation
𝑉𝑏𝑔
𝑎𝑐. Scan area 4.6 3.7 µm2, pixel size 40 nm, scan-speed 60 ms/pixel, ℎ = 20 nm.
𝐹𝐵 at this 𝑉𝑏𝑔. (B) Same as (A) at 𝑉𝑏𝑔
𝑑𝑐 = –6.7 V, 𝑉𝑡𝑔 =-1.17 V corresponding to 𝑉𝑡𝑔
31
B𝑇𝑎𝑐𝑏𝑔[μK]A𝑇𝑎𝑐𝑏𝑔[μK]500 nm𝑉𝑏𝑔𝑑𝑐=-8 V𝑉𝑏𝑔𝑑𝑐=-6.7 V
Figure S8. Revealing dissipation from individual LSs by tip gating.
(A) Thermal image 𝛿𝑇(𝑥, 𝑦) at flat-band condition in presence of 𝐼𝑑𝑐 = 1 μA rms chopped at 35.5 Hz injected
through the two right constrictions as indicated in Fig. 4F. Scan area 4.7 3.9 µm2, pixel size 25 nm, scan-
𝑇𝐹(𝑥, 𝑦)
speed 200 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = –2 V, 𝑉𝑡𝑔 = -0.53 V corresponding to 𝑉𝑡𝑔
thermal image away from flat-band condition revealing the individual resonant LSs at graphene edges in
form of rings. The faint rings at the bottom of the image arise from the graphene edges in the adjacent
chamber (see Fig. S4A). Scan area 4.7 3.9 µm2, pixel size 20 nm, scan-speed 60 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 =
–2 V, 𝑉𝑡𝑔 = 10 V, 𝐼𝑑𝑐 = 4 μA rms chopped at 35.5 Hz.
𝐹𝐵 at this 𝑉𝑏𝑔. (B) 𝑇𝑎𝑐
32
500 nmAδT[µK]500 nmB𝑇𝑎𝑐𝑇𝐹[µK]x3Vbg=-2 V, 𝑉𝑡𝑔=-0.53 V (𝑉𝑡𝑔𝐹𝐵)Vbg=-2 V, 𝑉𝑡𝑔=10 V
Figure S9. Current dependence of the thermal map at flat-band condition.
(A) Thermal image 𝛿𝑇(𝑥, 𝑦) in presence of 𝐼𝑑𝑐 = 120 nA rms chopped at 35.5 Hz injected through the two
right constrictions as indicated in Fig. 4F (the dotted line outlines the graphene edges). Scan area 4.7 3.7
µm2, pixel size 60 nm, scan-speed 600 ms/pixel, ℎ = 20 nm, 𝑉𝑏𝑔 = 0.33 V close to the CNP, 𝑉𝑡𝑔 =-0.16 V
𝐹𝐵 at this 𝑉𝑏𝑔. (B) 𝛿𝑇 profiles along the white dashed line in (A) at several indicated
corresponding to 𝑉𝑡𝑔
values of 𝐼𝑑𝑐. (C) Current dependence of the average temperature 〈𝛿𝑇〉 along the profiles (blue) and a
quadratic fit 〈𝛿𝑇〉 ∝ 𝐼𝑑𝑐
2 (red).
33
BCδT[μK]500 nmVbg=0.33 VAX2
Figure S10. Numerical simulations of tip-induced potentials and spectroscopy.
(A) Band bending 𝐸𝐷(𝑥) induced in graphene by the tSOT located at 𝑥 = 0 at potential 𝑉𝑡𝑔 = –1.5 V for
various back gate voltages 𝑉𝑏𝑔. (B) Band bending 𝐸𝐷(𝑥) in graphene at 𝑉𝑏𝑔 = 1 V and different values of 𝑉𝑡𝑔.
(C) Resonant dissipation traces describing the lateral displacement 𝑥 of the tSOT from the defect at which
resonant conditions for inelastic scattering are met as a function of 𝑉𝑡𝑔 for various values of 𝑉𝑏𝑔 depicting
the experimental results in Fig. S11B. (D) Resonant dissipation bell-shaped traces as a function of 𝑉𝑏𝑔 for
various values of 𝑉𝑡𝑔 describing the experimental results in Fig. 4B and Fig. S11E.
34
x[nm]Vbg[V]Vtg[V]DVtg[V]Vbg=1 Vx[nm]E[meV]BED(x)EFVbg[V]Vtg=-1.5 Vx[nm]E[meV]AED(x)EFx[nm]Vtg[V]Vbg[V]CVbg=1 V
Figure S11. Thermal spectroscopy of a single localized state.
(A) Map of 𝑇𝑎𝑐(𝑥) line scans through the center of defect 'C' upon varying 𝑉𝑡𝑔 at constant 𝑉𝑏𝑔 = − 1 V and
ℎ = 20 nm. Pixel width 3 nm, pixel height 50 mV, scan-speed 60 ms/pixel. (B) The resulting resonance traces
𝐹𝐵. (C) Map of
𝑅(𝑉𝑡𝑔) for various values of 𝑉𝑏𝑔. The transition from convex to concave traces occurs at 𝑉𝑏𝑔
𝑇𝑎𝑐(𝑥) line scans as in (A) at 𝑉𝑏𝑔 = 2.5 V. (D) Map of 𝑇𝑎𝑐(𝑥) line scans showing the bell-shaped resonance
trace at 𝑉𝑡𝑔 = −10 V over the full range of 𝑉𝑏𝑔 = ±10 V at ℎ = 12 nm, 𝑥𝑎𝑐 = 2.7 nm, and 𝐼𝑑𝑐 = 6 µA. The
bright strip at 𝑉𝑏𝑔 ≈ 0 V arises from enhanced heating at the nearby constriction, the resistance of which
becomes very large close to CNP. (E) The resulting fitted bell-shaped resonance traces 𝑅(𝑉𝑏𝑔) for various
𝐹𝐵. (F) Same as (D) at 𝑉𝑡𝑔 =10 V. The fact that only a single
values of 𝑉𝑡𝑔 that change their polarity at 𝑉𝑏𝑔
resonance trace is observed in (D) and (F) shows that the LS has only one energy level in the accessible range
of Vtg and Vbg. (G) The dissipation ring radius 𝑅(𝑉𝑏𝑔, 𝑉𝑡𝑔) of the LS over the entire range of tip and back gate
voltages with the 𝑉𝑏𝑔
𝐹𝐵 point marked by black dot.
𝐿𝑆, 𝑉𝑡𝑔
𝐿𝑆, 𝑉𝑡𝑔
𝐿𝑆, 𝑉𝑡𝑔
35
Vbg=-1 VTac[μK]Vtg[V]x[nm]AVtg[V]x[nm]Vbg[V]𝑉𝑡𝑔𝐹𝐵BIs the parabola filppedin x?Is it really the right defect (there are features coming from the left in this sweep)Tac[μK]Vbg=2.5 VVtg[V]x[nm]CVtg=10 VFVbg[V]x[nm]Tac[μK]R[nm]Vtg[V]Vbg[V]GOccupied stateEmpty stateVtg[V]Vbg[V]x[nm]𝑉𝑏𝑔𝐿𝑆EDTac[μK]Vtg=-10 VVbg[V]x[nm]
Figure S12. Numerical simulation of resonance lines of LS.
(A) Band bending 𝐸𝐷(𝑥) induced in graphene by the tSOT located at 𝑥 = 0 at 𝑧𝑡𝑖𝑝 = 60 nm above the
graphene for critical (𝑉𝑏𝑔, 𝑉𝑡𝑔) pairs such that 𝐸𝐷(𝑥 = 0) = 0 providing resonance conditions for inelastic
scattering from LS with 𝜀𝐿𝑆 = 0 (all other simulation parameters are identical to Fig. S10). Inset: Schematic
Dirac cone with LS aligned with 𝐸𝐹. (B) The resulting 𝑅 = 0 resonance curves for different 𝑧𝑡𝑖𝑝 heights. The
𝐿𝑆 (cross). (C) Derivative of the resonance
curves intersect at flat-band conditions determined by 𝑉𝑡𝑔
𝐶𝑁𝑃. For 𝜀𝐿𝑆 = 0 the crossing point coincides
curves showing the kink location determined by the local CNP, 𝑉𝑏𝑔
with the kinks. (D) Same as (A) for the case of 𝜀𝐿𝑆 = 30 meV. The resonance conditions are attained when
𝐸𝐷(𝑥 = 0) = −30 meV. (E,F) Same as (B,C) for the case of 𝜀𝐿𝑆 =30 meV. The kink and the crossing point are
well separated and their difference, 𝑉𝑏𝑔
𝐶𝑁𝑃, provides a direct measure of 𝜀𝐿𝑆.
𝐹𝐵 and 𝑉𝑏𝑔
𝐿𝑆 − 𝑉𝑏𝑔
36
Vtg[V]𝑉𝑡𝑔𝐹𝐵𝑉𝑏𝑔𝐶𝑁𝑃𝑉𝑏𝑔𝐿𝑆EVtg[V]𝑉𝑡𝑔𝐹𝐵𝑉𝑏𝑔𝐶𝑁𝑃=𝑉𝑏𝑔𝐿𝑆BC𝑑𝑉𝑡𝑔𝑑𝑉𝑏𝑔⁄Vbg[V]FVbg[V]𝑑𝑉𝑡𝑔𝑑𝑉𝑏𝑔⁄Dx[nm]E[meV]Vtg[V]Vbg[V]EFεLS=30 meV-505ED(x)-404Ax[nm]E[meV]Vtg[V]Vbg[V]EFεLS=0 meV-505ED(x)0-44
Figure S13. Calculated and measured resonance lines of LS.
(A) Calculated band bending 𝐸𝐷(𝑥) induced in graphene by the tSOT as in Fig. S12 for the case of 𝜀𝐿𝑆 = −20
meV. Inset: Schematic Dirac cone with LS aligned with 𝐸𝐹 at resonance conditions. (B,C) The resulting
calculated resonance curves for different 𝑧𝑡𝑖𝑝 values (B) and the derivatives of the curves (C), showing the
𝐶𝑁𝑃. (D) Experimental resonance lines of defect 'C' extracted from
intersection and the kink points 𝑉𝑏𝑔
the data of Fig. 2D and a similar measurement performed at ℎ = 20 nm above the hBN surface with
otherwise the same measurement parameters, and their numerical derivatives (E). A kink is apparent at the
𝐶𝑁𝑃 = 0.48 V, defined by the minima in (E). Experimental curves intersect at
local change neutrality point, 𝑉𝑏𝑔
𝑉𝑏𝑔
𝐹𝐵 = –0.26 V (indicated by the cross in (D)), resulting in 𝜀𝐿𝑆 = −22 meV.
𝐿𝑆 and 𝑉𝑏𝑔
𝐿𝑆 = 0.2 V and 𝑉𝑡𝑔
37
Vtg[V]D𝑉𝑡𝑔𝐹𝐵𝑉𝑏𝑔𝐿𝑆𝑉𝑏𝑔𝐶𝑁𝑃ExperimentVbg[V]E𝑑𝑉𝑡𝑔𝑑𝑉𝑏𝑔⁄SimulationVtg[V]B𝑉𝑡𝑔𝐹𝐵𝑉𝑏𝑔𝐿𝑆𝑉𝑏𝑔𝐶𝑁𝑃SimulationVbg[V]𝑑𝑉𝑡𝑔𝑑𝑉𝑏𝑔⁄Cx[nm]AE[meV]Vtg[V]Vbg[V]EFED(x)-404-505εLS=-20 meV
Figure S14. Estimating the spectral width of the localized state.
(A) Bell-shaped 𝑇𝑎𝑐 dissipation trace of defect 'B' at 𝑉𝑡𝑔 = −10 V, ℎ = 20 nm, 𝑥𝑎𝑐 = 2.7 nm, and 𝐼𝑑𝑐 = 3 µA.
The slope of the trace 𝑑𝑉𝑏𝑔 𝑑𝑥⁄
(at 𝑉𝑏𝑔 = 5.3 V, green line) translates the width of the ring, 𝛿𝑥, into
corresponding width 𝛿𝑉𝑏𝑔 and 𝛿𝐸 of the LS. (B) Width 𝛿𝑥 of the dissipation ring vs. the tip vibration rms
amplitude 𝑥𝑎𝑐 at 𝐼𝑑𝑐 = 3 µA (red curve is a guide to the eye). (C) Width 𝛿𝑥 of the dissipation ring vs. 𝐼𝑑𝑐 at
𝑥𝑎𝑐 = 0.5 nm. (D) 𝑇𝑎𝑐 dissipation ring at 𝑉𝑡𝑔 = −10 V, 𝑉𝑏𝑔 = 5.3 V, ℎ = 20 nm, 𝑥𝑎𝑐 = 0.5 nm, and 𝐼𝑑𝑐 = 2 µA
(Scan area 180 180 nm2, pixel size 1.2 nm, scan-speed 600 ms/pixel). (E) Several line-cuts in the rectangle in
(C) (blue, x-axis parallel to long edge of the rectangle), and the average of the profiles (red) determining the
width of the ring 𝛿𝑥 = 7 nm. (F) The corresponding 𝛿𝑇(𝜀) ∝ 𝑃𝑒𝑝(𝜀), with 𝛿𝐸 = 13 meV.
38
CIdc[µA]δx[nm]δx[nm]xac[nm]BTac[μK]x[nm]EδxDTac[μK]20 nmδxx[nm]Tac[μK]Vbg[V]δVbgδxA𝑑𝑉𝑏𝑔𝑑𝑥Pep(ε)∝δT(ε)[μK]ε[meV]FδE
Figure S15. Spectroscopic thermal imaging of the localized edge states.
(A) Map of 𝑇𝑎𝑐(𝑥) line scans along the bottom edge of the graphene sample (reproduced from Fig. 4D) vs.
𝑉𝑏𝑔 at 𝑉𝑡𝑔 = −10 V showing bell-shaped resonant dissipation traces of the individual LSs. (B) Numerical fits
𝐿𝑆 describe
(black) to the bell-shaped traces of 135 clearly resolved LSs. The asymptotic values of the traces 𝑉𝑏𝑔
the energy 𝐸𝐿𝑆 of the LSs. The colored traces (red, blue and yellow) show examples of pairs of adjacent
𝐿𝑆. The green traces show an example of five LSs within 8 nm
neighbors with significantly different energy 𝑉𝑏𝑔
interval. (C) Probability density of the nearest neighbor distances ∆𝑥𝑛𝑛 between the LSs (20 bins) and the
𝐿𝑆 values of the resolved states vs. their
theoretical exponential decay for random distribution (black). (D) 𝑉𝑏𝑔
location 𝑥𝑖 along the edge showing large uncorrelated variation in the energy of the LSs. (E) The difference in
𝑉𝑏𝑔
𝐿𝑆 vs. the distance ∆𝑥𝑛𝑛 between the neighboring LSs.
𝐿𝑆 between the nearest neighbors ∆𝑛𝑛𝑉𝑏𝑔
39
Tac[μK]x[μm]Vbg[V]Axi[μm]𝑉𝑏𝑔𝐿𝑆[V]D nm C𝑃 [μm-1]------------------group #1: max dx=2.25 nm, max dVbg=4.1964 Vx0=0.61383 0.61608eps=1.463 -2.7334peaks=7.465 2.3854------------------group #2: max dx=0 nm, max dVbg=4.0735 Vx0=0.818 0.818eps=-5.742 -9.8154peaks=-1.2269 -5.9611------------------group #3: max dx=1.853 nm, max dVbg=8.261 Vx0=1.9269 1.9288eps=1.7184 -6.5427peaks=7.5259 -1.9513------------------group #4: max dx=7.794 nm, max dVbg=9.3296 Vx0=2.6362 2.6364 2.6395 2.6421 2.6439eps=-4.598 -9.2302 -6.5325 0.09942 -2.0848peaks=0.13822 -5.2973 -2.2774 5.5571 3.2037E xnn[nm] nn𝑉𝑏𝑔𝐿𝑆 [V]𝜌𝑒−∆𝑥𝑛𝑛𝜌Tac[μK]x[μm]Vbg[V]B
Movie Captions
Movie S1. Thermal imaging of dissipation in hBN encapsulated graphene
Scanning nanothermometry movie of 𝑇𝑎𝑐(𝑥, 𝑦) of 44 µm2 hBN/graphene/hBN sample. The tSOT of 33 nm
effective diameter is scanned at ℎ = 20 nm above the sample surface in presence of a dc current 𝐼𝑑𝑐 = 3 µA
applied between the top and the bottom-right constrictions at back gate voltage 𝑉𝑏𝑔 = −2 V. The tSOT is
attached to a tuning fork and oscillates at 36.9 kHz with rms amplitude 𝑥𝑎𝑐 = 2.7 nm parallel to the surface
at an angle of 12° relative to the 𝑥 axis, providing sensitive 𝑇𝑎𝑐(𝑥, 𝑦) imaging. The movie shows a sequence
of images as the tip potential 𝑉𝑡𝑔 is incremented from 0 to 9 V. Numerous dissipation rings appear along the
graphene edges and expand as 𝑉𝑡𝑔 increases. In addition, three isolated dissipation rings form and expand
inside the sample revealing rare atomic defects in the bulk of graphene. The bulk and edge defects form
sharp localized states acting as point source emitters of phonons due to resonant inelastic scattering of
electrons. Scan area 5.5 5 µm2, pixel size 18.3 nm, scan-speed 20 ms/pixel.
Movie S2. Thermal imaging of resonant dissipation of three bulk localized states
Scanning nanothermometry movie of 𝑇𝑎𝑐(𝑥, 𝑦) of the central part of hBN/graphene/hBN sample. Three
resonant dissipation rings appear and expand upon increasing 𝑉𝑡𝑔 from 2 to 10 V revealing inelastic electron
scattering from three individual atomic defects. The small differences in the onset potential of the rings can
be ascribed to long-range substrate potential disorder modifying the local CNP. 𝑉𝑏𝑔 = −1 V, 𝐼𝑑𝑐 = 3 µA, ℎ =
20 nm, 𝑥𝑎𝑐 = 2.7 nm, scan area 3.5 2.8 µm2, pixel size 17.5 nm, scan-speed 20 ms/pixel. The slightly non-
monotonic expansion of the rings is a result of fluctuations in the tSOT scanning height.
Movie S3. Principle of spectroscopic thermal imaging of localized states
Animation describing thermal spectroscopy of the dissipation process due to resonant inelastic scattering of
electrons from a localized state. A single LS with an energy level at 𝐸𝐿𝑆 pinned to the Dirac energy 𝐸𝐷 is
located at 𝑥 = 0 marked by a sharp peak in 𝑃𝑒𝑝(𝜀). The Fermi energy 𝐸𝐹 (dashed) is determined by the back
gate voltage 𝑉𝑏𝑔. Electrons are injected from left at energy 𝐸𝑒 (red arrows). The potential 𝑉𝑡𝑔 of the moving
tSOT induces local band bending of the graphene Dirac energy 𝐸𝐷(𝑥) (blue) which shifts the energy of the LS.
Inelastic scattering of the electrons occurs when the tip-induced potential brings the LS into resonance,
𝐸𝐿𝑆 = 𝐸𝑒, resulting in phonon emission from the defect (red arcs) which is detected by the tSOT as a sharp
𝛿𝑇(𝑥) thermal signal (red curve) when positioned at 𝑥 = ±𝑅. In 2D thermal imaging this results in a ring of
enhanced 𝛿𝑇(𝑥, 𝑦) with its center at the LS. The 𝛿𝑇𝑜𝑛(𝑥) curve (dashed) describes the local temperature
that would be measured by the tSOT if the LS stayed at resonance constantly. The band bending curve 𝐸𝐷(𝑥)
(blue) was calculated using the electrostatic simulations as described in Section 6.
Movie S4. Spectroscopic dissipation traces of a single bulk localized state vs. 𝑽𝒕𝒈
Spectroscopic nanothermometry movie of 𝑇𝑎𝑐(𝑥) of defect 'C'. The tSOT is scanned along a line through the
center of the LS upon varying 𝑉𝑡𝑔. The different frames show the evolution of the resonant dissipation trace
𝐿𝑆. 𝐼𝑑𝑐 = 3 µA, ℎ = 20 nm, pixel width 3 nm, pixel height 50
with 𝑉𝑏𝑔. The curvature of the trace flips at 𝑉𝑏𝑔
mV, scan-speed 60 ms/pixel.
Movie S5. Spectroscopic bell-shaped dissipation traces of a single bulk localized state vs. 𝑽𝒃𝒈
Spectroscopic nanothermometry movie of 𝑇𝑎𝑐(𝑥) of defect 'C'. The tSOT is scanned along a line through the
center of the LS upon varying 𝑉𝑏𝑔. The different frames show the evolution of the resonant trace upon
𝐹𝐵. The bright 𝑉𝑡𝑔-independent signal in a
changing the tip potential 𝑉𝑡𝑔. The curvature of the trace flips at 𝑉𝑡𝑔
form of a strip around 𝑉𝑏𝑔 ≈ 0 V is the result of heating of the nearby constriction that peaks when 𝑉𝑏𝑔
reaches CNP of the constriction. 𝐼𝑑𝑐 = 3 µA, ℎ = 20 nm, pixel width 5 nm, pixel height 30 mV, scan-speed 20
ms/pixel.
40
Movie S6. Spectroscopic bell-shaped dissipation traces of edge localized states vs. 𝑽𝒃𝒈
Spectroscopic nanothermometry movie of 𝑇𝑎𝑐(𝑥) of edge LSs. The tSOT is scanned along the bottom edge of
the graphene upon varying 𝑉𝑏𝑔, revealing numerous resonant bell-shaped dissipation traces. The different
frames show the evolution of the resonant traces with 𝑉𝑡𝑔. The resonant dissipative edge states are
𝐿𝑆. 𝐼𝑑𝑐 = 3 µA, ℎ = 20 nm, pixel width 4 nm, pixel
observed at all values of 𝑉𝑏𝑔 with very large variations in 𝑉𝑏𝑔
height 100 mV, scan-speed 60 ms/pixel. High-pass filtering was applied to emphasize the pertinent bell-
shaped resonance traces.
Movie S7. Spectroscopic dissipation traces of edge localized states vs. 𝑽𝒕𝒈
Spectroscopic nanothermometry movie of 𝑇𝑎𝑐(𝑥) of edge LSs. The tSOT is scanned along the bottom edge of
the graphene upon varying 𝑉𝑡𝑔, revealing numerous resonant dissipation traces. The different frames show
the evolution of the resonant traces with 𝑉𝑏𝑔. The resonant edge states are observed at all values of 𝑉𝑏𝑔 with
𝐿𝑆 at which the curvature of trace originating from a given LS flips. 𝐼𝑑𝑐 = 3 µA, ℎ =
very large variations in 𝑉𝑏𝑔
20 nm, pixel width 10 nm, pixel height 100 mV, scan-speed 20 ms/pixel.
41
|
1201.0267 | 1 | 1201 | 2011-12-31T14:29:48 | Multi-dimensional laser spectroscopy of exciton-polaritons with spatial light modulators | [
"cond-mat.mes-hall",
"cond-mat.quant-gas"
] | We describe an experimental system that allows one to easily access the dispersion curve of exciton-polaritons in a microcavity. Our approach is based on two spatial light modulators (SLM), one for changing the excitation angles (momenta), and the other for tuning the excitation wavelength. We show that with this setup, an arbitrary number of states can be excited accurately and that re-configuration of the excitation scheme can be done at high speed. | cond-mat.mes-hall | cond-mat |
Multi-dimensional laser spectroscopy of exciton polaritons with spatial light
modulators
Institut fur Experimentalphysik, Universitat Innsbruck, Technikerstrasse 25, 6020 Innsbruck, Austria
P. Mai, B. Pressl, M. Sassermann, Z. Voros, and G. Weihs
Technische Physik, Physikalisches Institut, Wilhelm Conrad Rontgen Research Center for Complex Material Systems,
Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany
C. Schneider, A. Loffler, S. Hofling, and A. Forchel
We describe an experimental system that allows one to easily access the dispersion curve of exciton-
polaritons in a microcavity. Our approach is based on two spatial light modulators (SLM), one for
changing the excitation angles (momenta), and the other for tuning the excitation wavelength.
We show that with this setup, an arbitrary number of states can be excited accurately and that
re-configuration of the excitation scheme can be done at high speed.
Cavity polaritons are the coherent superpositions of a
confined electric field, and some excitation of the solid, be
it a phonon, plasmon, or exciton. Amongst these quasi-
particles, owing to both possible applications and their
role in fundamental research, exciton-polaritons in a pla-
nar microcavity are perhaps the most extensively studied.
These quasi-particles are relatively short-lived (their
lifetime is of the order of several ps), and they can de-
cay by the emission of a photon. From the experimental
point of view, one of the advantages of using a planar
structure is that the momentum of the decaying polari-
ton is mapped into the angle of the out-going photon.
Conversely, by exciting the system at a particular angle
and energy, a well-defined polariton state can be popu-
lated at will. While this seems simple in theory, practice
tends to be less straightforward.
In order to excite, or to measure a specific polariton
state, several approaches have been developed through
the years. These involve either one or more goniome-
ters [1 -- 3], a confocal setup [4, 5], or beam shifting [6].
Common to all these schemes is a mechanical means of
moving the beams, which implies that re-configuration
of the excitation geometry is slow and complicated. Fur-
thermore, the complexity of the setup increases consid-
erably, if more than one excitation beam is involved, and
experiments become impractical for three beams.
In this Letter, we would like to introduce a scheme
that does not suffer from the above-mentioned difficul-
ties. Instead of mechanically moving optical elements, we
apply spatial light modulators (SLM), thereby eliminat-
ing the main limiting factor. SLMs are special reflective
or transmissive liquid crystal devices that can modulate
either the phase, or amplitude of the impinging light, or
both at the same time.
SLMs have found many uses, both in fundamental, and
applied research. They are extensively utilized as opti-
cal tweezers in biological applications [7, 8], to beat the
diffraction limit in optical imaging [9], or to create light
with orbital angular momentum in quantum information
experiments [10, 11], just to name a few examples. This
latter approach has successfully been applied in polari-
ton experiments to create a polariton superfluid with a
FIG. 1. (color online) Experimental configuration: A phase-
only SLM (SLM1) is used to displace the beam, thus to change
the excitation momentum. SLM2 is an amplitude-only de-
vice, which selects the excitation wavelengths in a standard
4-f pulse compressor. The half-wave plate (HWP) and the
polarizing beam splitter (PBS1) are optional, and are used
only when two-color excitation is required. The optical fibers
are used in momentum-selective detection, either in reflection
(F1), or transmission configuration (F2, F3). For clarity, not
all split beams are shown.
well-defined angular momentum [12, 13].
Our experimental setup is shown in Fig. 1. A colli-
mated laser beam impinges on a phase-only spatial light
modulator (SLM1) [14]. The beam expander only serves
to make the illumination more uniform. On the SLM,
we define a phase-mask equivalent to a lens (a parabolic
phase profile), thereby focusing the beam to a 100-µm
large spot on the entrance side of a microscope objective
with working distance of 2.3 mm [15].
It is important
to note that since the beam is focused on the objective,
from the objective's perspective, the incoming beam can
be approximated as a localized plane wave, which is, in
turn, focused by the objective to an about 10-µm large
spot on the sample. By moving the SLM's phase pro-
file, the focal point can be shifted in the plane of the
microscope objective, thus changing the excitation an-
gle. With the 100-µm focal spot on the objective, we
can achieve an angular selection of about 2 degrees. This
translates into about 2 · 105 m−1 momentum selection in
the total accessible polariton momentum range of about
2
First, we measured the reflectivity of such a microcav-
ity sample as a function of the excitation angle. For this,
we kept the laser wavelength fixed at λ = 770.5 nm. The
laser beam is split by a beam splitter, (BS1) in Fig. 1.
SLM1 focuses the passing component on the objective,
while the other half serves as power reference. The beam
reflected by the sample is then directed towards a large-
area power meter, which replaces the fiber (F1) in Fig. 1.
If the incoming laser beam is now scanned in the x − y
plane (the plane of the back of the microscope objective),
the reflected intensities will be reduced, if the correspond-
ing momentum coincides with that dictated by the polari-
ton dispersion, and the energy of the laser. This polariton
resonance manifests itself as a circle of lower intensity in
Fig. 2. The right hand side of the figure shows the inten-
sity along the vertical line that passes through the origin
of momentum space, and it clearly demonstrates the two
resonances at k = ±2 · 106 m−1.
By shifting the mask positions on SLM2, the mea-
surement can be repeated for other energies, giving a
three-dimensional map of the polariton dispersion. A
two-dimensional projection of the dispersion of the lower
polariton branch is shown in Fig. 3. The points were
obtained by fitting a circular profile to the reflectivity
minimum in figures similar to Fig. 2, and then taking
the circles' coordinates at the leftmost, and rightmost
points, respectively. In Fig. 3, the points are not com-
pletely symmetric owing to the small variation in the cir-
cles' center position. We then fitted the analytical lower
polariton dispersion to the measured points with a Rabi
splitting of ¯hΩRabi = 11 meV, cavity energy Ec = 1.612
meV, and exciton energy Ex = 1.6088 meV [19]. These
FIG. 3. Lower polariton dispersion extracted from reflectiv-
ity scans similar to those in Fig. 2. The solid line is a fit
to the analytical lower polariton dispersion with parameters
¯hΩRabi = 11 meV, Ec = 1.612 meV, and Ex = 1.6088 meV
[19]. The horizontal error was determined from the error of
the fit to the circles on Fig. 2, while the error in the energy
of the laser is less than 0.05 meV, the size of the dots in the
figure.
FIG. 2. (color online) Reflectivity scan of an AlGaAs/GaAs
microcavity. The color range is relative to the maximum of
the reflected intensity. The intensity cut-off at around 4.5 ·
106 m−1 is due to the numerical aperture of the microscope
objective. The right hand side shows the intensity along the
vertical line passing through k = 0.
5 · 106 m−1 [16]. (In our case, the accessible momentum
range is limited by the clear aperture of the objective,
shown in Figs. 2, and 4.)
When tuning of the laser's energy is required, we make
the laser pass through a standard pulse-shaping configu-
ration containing two 1200-line gratings, and a pair of
spherical mirrors with a focal length of 500 mm (up-
per half of Fig. 1). A laser beam with duration 180 fs
is dispersed by the first grating (GR1), and then com-
bined again with the second grating (GR2). In the com-
mon focal plane of the spherical mirrors (M1, M2), an
amplitude-only SLM (SLM2) with 128 pixels is located
[17], and it acts as a re-configurable wavelength filter.
The configuration above allows us to select an arbitrary
wavelength within the bandwidth of laser pulse with a
precision of about 0.1 nm. This setup can easily be ex-
tended, in order to make two-color excitation schemes
possible: instead of one, two slits are defined on SLM2,
and the polarization of one of the colors is rotated by 90
degrees by an achromatic waveplate (HWP). In this way,
after re-combining the beams on GR2, we can separate
them on a polarizing beam splitter (PBS), so that the
two colors can be steered independently. The waveplates
WP1, and WP2, and the delay line in one of the beams
are optional, and can be used for generating arbitrary lin-
ear or circular polarization, and delays. We should point
out that apart from translation stages required for adjust-
ing the foci at the beginning of an experiment, the delay
line is the only variable mechanical part in our setup.
In order to prove the viability of our setup, we carried
out various measurements on a AlGaAs/GaAs microcav-
ity sample identical to that discussed in [18]. The sample
consists of a λ/2 cavity with three sets of four quantum
wells located at the antinodes of the confined field.
-4-2024Wave vector [106 m1]-4-2024Wave vector [106 m1]0.51.0-4-3-2-101234In-plane wave vector [106 m−1]1.6051.6071.609Energy [eV] 3
(PLE) measurement. Again, the wavelength of the laser
is kept constant at 770.2 nm, while the excitation mo-
mentum is scanned. However, instead of detecting the
reflected power, we measure the luminescence intensity
at the center of the dispersion curve. For momentum se-
lection on the detection side, we used a multimode fiber
of diameter 62.5 µm, (F1 in Fig. 1), and fed the collected
light into a spectrometer.
Resonance behavior is apparent in Fig. 4, where we
show the luminescence intensities as a function of the
excitation momentum. The intensities are taken from
spectra integrated over a range of 3 nm. The range was
chosen such that that it suppresses the excitation laser's
contribution, which, however, is still visible at normal
incidence, and high momenta. Further suppression of
the scattered laser light can be achieved by measuring in
orthogonal polarization with respect to the excitation.
In comparison with the reflectivity dip in Fig. 2, the
PLE intensities in Fig. 4 give a much better defined res-
onance, and we can easily fit a circle to the maxima.
Repeating this procedure for various wavelengths, we get
a three-dimensional representation of the polariton dis-
persion, as depicted in Fig. 5.
We would like to point out that our setup has tremen-
dous advantages in terms of speed. Since the required
phase masks can efficiently be calculated in the video
card of a computer, and the amplitude masks do not have
to be calculated, the displayed phases or amplitudes can
be re-defined in 1/60 or 1/100 of a second, respectively.
These numbers are determined by the maximum refresh
rate of the SLMs. The two-dimensional scans in Fig. 2
(reflectivity) and in Fig. 4 (PLE), can be acquired in
about 40 seconds.
In conclusion, we introduced a versatile beam-steering
system that can be used to easily access the complete po-
lariton phase-space, even if an excitation scheme requires
multiple momenta and energies. This approach should
make it possible to easily, and simultaneously excite non-
degenerate polariton states. Due to the technical difficul-
ties mentioned in the introduction, non-degenerate exci-
tation of polaritons is a largely unexplored field. Beyond
its fundamental importance, it could be useful for the
generation of entangled photons [20, 21]. We would also
like to mention that the scheme that we outlined above
can also be used for studying polaritons in confined ge-
ometries, either in wires, or in micropillars.
We acknowledge partial funding of this work by the
Austrian Science Fund (FWF), Project P22979-N16. We
are also indebted to D. Snoke for providing us with sam-
ples at the initial stages of our work.
FIG. 4.
(color online) Luminescence intensity at k = 0 as
a function of the excitation momentum. The color range is
relative to the maximum of the luminescence intensity. On
the right, a cut is shown along a vertical line through k = 0.
The red circle with a radius of about k = 4.5· 106 m−1 is laser
light scattered by the aperture of the microscope objective,
while the small peak at k = 0 is the tail of the excitation
laser's spectrum.
FIG. 5.
the measured polariton dispersion.
(color online) Three-dimensional representation of
values are in reasonable agreement with those reported
earlier for identical samples.
Next, we conducted a photoluminescence excitation
[1] Ryan Balili, Bose-Einstein condensation of microcavity
polaritons, Phd Thesis, Univeristy of Pittsburgh (2009)
[2] P. G. Savvidis, J. J. Baumberg, R. M. Stevenson,
M. S. Skolnick, D. M. Whittaker, J. S. Roberts, Phys.
Rev. B 62 R13278 (2000)
[3] S. Kundermann, T. Guillet, M. Saba, C. Ciuti, O. El
Daıf, J. L. Staehli and B. Deveaud, Physica Status Solidi
(a) 201, 381
[4] Wolfgang Langbein, Phys. Stat. Sol. b 242 2260 (2005)
[5] S. Savasta, O. Di Stefano, V. Savona and W. Langbein,
-4-2024Wave vector [106 m1]-4-2024Wave vector [106 m1]0.00.51.0[106m-1]¡-2024[106m¢-1]¡-202Energy[eV]1.6061.6084Wave vectorWave vector Phys. Rev. Lett. 94 246401 (2005)
[6] R. Huang, F. Tassone and Y. Yamamoto, Phys. Rev. B
61 R7854 (2000)
[7] Christian Maurer, Alexander
Severin
Furhapter, Stefan Bernet and Monika Ritsch-Marte,
New Journal of Physics 9 78 (2007)
Jesacher,
[8] David G. Grier, Nature 424 810 (2003)
[9] E. G. van Putten, D. Akbulut, J. Bertolotti, W. L. Vos,
A. Lagendijk and A. P. Mosk, Phys. Rev. Lett. 106
193905 (2011)
[10] Alipasha Vaziri, Gregor Weihs, Anton Zeilinger, Journal
of Optics B: Quantum and Semiclassical Optics 4 S47
(2002)
[11] B. Jack, J. Leach, J. Romero, S. Franke-Arnold,
M. Ritsch-Marte, S. M. Barnett and M. J. Padgett, Phys.
Rev. Lett. 103 083602 (2009)
[12] D. N. Krizhanovskii, D. M. Whittaker, R. A. Bradley,
K. Guda, D. Sarkar, D. Sanvitto, L. Vina, E. Cerda,
P. Santos, K. Biermann, R. Hey and M. S. Skolnick, Phys.
Rev. Lett. 104 126402 (2010)
4
[13] K. Lagougadis, private communication
[14] PLUTO phase-only modulator with a 1920 x 1080 pixels,
and 15.36 x 8.64 mm size, www.holoeye.de
[15] Zeiss Ld Plan Neofluar 63x 0.75, www.zeiss.com
[16] The focal spot size and angular resolution are determined
by several factors: a short focal length on the SLM would
increase the angular resolution at the expense of the fi-
nal spot size on the sample. At the same time, the focal
length defined on the SLM has to be long enough, so that
the various diffraction orders can be separated.
[17] SLM-128 with 128 pixels, and 12.8 x 10 mm size,
www.cri-inc.com
[18] J. Bloch, T. Freixanet, J. Y. Marzin, V. Thierry-Mieg
and R. Planel, Appl. Phys. Lett. 73 1694 (1998)
[19] H. Deng, H. Haug and Y. Yamamoto, Rev. Mod. Phys.
82 1489 (2010)
[20] T. C. H. Liew and V. Savona, Phys. Rev. A 84 032301
(2011)
[21] S. Portolan, O. Di Stefano, S. Savasta and V. Savona,
EPL (Europhysics Letters) 88 20003 (2008)
|
1002.0685 | 1 | 1002 | 2010-02-03T10:01:19 | The effect of disorder within the interaction theory of integer quantized Hall effect | [
"cond-mat.mes-hall"
] | We study effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. Short range part of the single impurity potential is used to define the conductivity tensor elements within the self-consistent Born approximation, whereas the long range part is treated self-consistently at the Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we find that the long range disorder potential is well screened. While, the short range part is approximately unaffected by screening and is suitable to define the mobility at vanishing magnetic fields. In light of these range dependencies we discuss the extend of the quantized Hall plateaus considering the "mobility" of the wafer and the width of the sample, by re-formulating the Ohm's law at low temperatures and high magnetic fields. We find that, the plateau widths mainly depend on the long range fluctuations of the disorder, whereas the importance of density of states broadening is less pronounced and even is predominantly suppressed. These results are in strong contrast with the conventional single particle pictures. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the level broadening is negligible. | cond-mat.mes-hall | cond-mat |
The effect of disorder within the interaction theory
of integer quantized Hall effect
S. E. Gulebaglan1, G. Oylumluoglu2, U. Erkarslan2,
A. Siddiki2,3 and I. Sokmen1
1Dokuz Eylul University, Physics Department, Tınaztepe Campus, 35100 Izmir,
Turkey
2Mugla University, Physics Department, Faculty of Arts and Sciences, 48170-Kotekli,
Mugla, Turkey
3Istanbul University, Faculty of Sciences, Physics Department, Vezneciler-Istanbul
34134, Turkey
E-mail: afifsiddiki@gmail.com
Abstract. We study effects of disorder on the integer quantized Hall effect within
the screening theory, systematically. The disorder potential is analyzed considering
the range of the potential fluctuations. Short range part of the single impurity
potential is used to define the conductivity tensor elements within the self-consistent
Born approximation, whereas the long range part is treated self-consistently at the
Hartree level. Using the simple, however, fundamental Thomas-Fermi screening, we
find that the long range disorder potential is well screened. While, the short range
part is approximately unaffected by screening and is suitable to define the mobility at
vanishing magnetic fields. In light of these range dependencies we discuss the extend
of the quantized Hall plateaus considering the "mobility" of the wafer and the width of
the sample, by re-formulating the Ohm's law at low temperatures and high magnetic
fields. We find that, the plateau widths mainly depend on the long range fluctuations of
the disorder, whereas the importance of density of states broadening is less pronounced
and even is predominantly suppressed. These results are in strong contrast with the
conventional single particle pictures. We show that the widths of the quantized Hall
plateaus increase with increasing disorder, whereas the level broadening is negligible.
This work focuses on the disorder effects on the integer quantized Hall effect within the
screening theory. Since the early days of QHE, disorder played a very important role,
however, interactions were completely neglected. Here we present our results which also
includes interactions in a self-consistent manner and show that even without localization
one can obtain the quantized Hall plateaus. We investigated different aspects of the
impurity potential and suggested a criterion on mobility at high magnetic fields. We
think that our work will shed light on the understanding of the QHE and is interest to
condensed matter community. Keywords: Article preparation, IOP journals Submitted
to: J. Phys. C: Solid State Phys.
Disorder in screening theory
1. Introduction
2
The integer quantized Hall effect (IQHE), observed at two dimensional charge systems
(2DCS) subject to strong perpendicular magnetic fields B, is usually discussed within the
single particle picture, which relies on the fact that the system is highly disordered [1, 2].
These quantized (spinnless) single particle energy levels are called the Landau levels
(LLs) and the discrete energy values are given by EN = ωc(n + 1/2), where n is
the Landau index and ωc = eB/m∗c is the cyclotron frequency of an electron with an
effective mass m∗ (≈ 0.067me, me being the bare electron mass at rest) and c is the
speed of light in vacuum.
In single particle models the disorder plays several roles,
such as Landau level broadening [3], leading to a finite longitudinal conductivity [4, 5],
spatial localization [6] etc. Disorder can be created by inhomogeneous distribution of
dopant ions which essentially generates the confinement potential [7] for the electrons.
In the absence of disorder, the density of states are Dirac delta-functions D(E) =
N =0δ(E − EN ), where l = (cid:112)/eB is the magnetic length, and the longitudinal
(cid:80)∞
1
2πl2
conductivity (σl) vanishes. For a homogeneous two dimensional electron system (2DES),
by the inclusion of disorder and due to collisions, LLs become broadened. Therefore the
longitudinal conductance becomes non-zero in a finite energy (in fact magnetic field)
interval. Long range potential fluctuations generated by the disorder result in the so
called classical localization [8], i.e. the guiding center of the cyclotron orbit moves along
closed equi -- potentials [9]. In contrast to the above mentioned bulk theories, the edge
theories usually disregard the effect of disorder to explain the (quantized) Hall resistance
RH and accompanying (zero) longitudinal resistance RL. However, the non-interacting
edge theories still require disorder to provide a reasonable description of the transition
between the plateaus. The Landauer-Buttiker approach (known as the edge channel
picture) [10] and its direct Coulomb interaction generalized version, i.e. the non-self-
consistent Chklovskii picture [11], also needs localization assumptions in order to obtain
quantized Hall (QH) plateaus of finite width (see for a review e.g. Datta's book [12]
and Ref. [9] for the estimates of plateau widths at the high disorder limit).
In contrast to above discussions very recent experimental [13, 14, 15, 16] and
theoretical [17, 18] results point the incomplete treatment of the disorder potential
and scattering mechanisms. Fairly recent theoretical approaches [19], the QH plateaus
are obtained by the inclusion of direct Coulomb interaction self-consistently [20] and the
effect of the disorder was handled via conductivity tensor elements [21], however, the
source of the disorder and its properties was left unresolved [22]. Whereas, the influence
of potential fluctuations on the QH plateaus were discussed briefly [23, 24].
This work provides a systematic investigation of the disorder potential and its
influence on the quantized Hall effect including direct Coulomb interaction. The
investigation is extended to realistic experimental conditions in determining the widths
of the quantized Hall plateaus. We, essentially study the effect of disorder in two distinct
regimes, namely the short range and the long range. The short range part is included
to the density of states (DOS), thereby influences the widths of the current carrying
Disorder in screening theory
3
edge-states and the entries of the conductivity tensor. Whereas, the long range part
is incorporated to the self-consistent calculations, which determines the extend of the
plateaus in turn. In Sec 2 we introduce two types of single impurity potentials, namely
the Coulomb and the Gaussian, and compare their range dependencies considering
damping of the dielectric material. In the next step we discuss the screened disorder
potential within a pure electrostatic approach, by considering an homogeneous two
dimensional electron system (2DES) without an external magnetic field and show that
the long range part is well screened, whereas the short range part is almost unaffected.
Section 2.2 is devoted to investigate impurities numerically, where we solve the Poisson
equation self-consistently in three dimensions. The numerical and analytical calculations
are compared, considering the estimations of the disorder potential range and its
variation amplitude. We finalize our discussion with Sec. 3, where we calculate the
plateau widths under experimental conditions for different sample widths and mobilities.
2. Impurity potential
The disorder potential experienced by the 2DES, resulting from the impurities has quite
complicated range dependencies. Since, the potential generated by an impurity is (i)
damped by the dielectric material in between the impurity and the plane where the
2DES resides (ii) is screened by the homogeneous 2DES depending on the density of
states, which changes drastically with and without magnetic field.
It is common to
theoreticians to calculate the conductivities from single impurity potentials, such as
Lorentzian [19], Gaussian [25] or any other analytical functions [26, 27]. However, the
landscape of potential fluctuations is also important to define the actual mobility of the
sample at hand, in particular in the presence of an external magnetic field.
2.1. Pure Electrostatics
We first discuss the different range dependencies of the Coulomb and Gaussian donors,
assuming open boundary conditions. Next, the effect of the spacer thickness on the
disorder potential is discussed, namely the damping of the external (Coulomb) potential,
and is compared with the Thomas-Fermi screening. The different damping/screening
dependencies of the resulting potentials are discussed in terms of range.
The Coulomb potential presents long range part, which leads to long range
fluctuations due to overlapping if several donors are considered. Whereas, the Gaussian
potential decays exponentially on the length scale comparable with the separation
thickness. Since the Gaussian potential is relatively short ranged, no overlapping of
the single donor potentials occur. Hence, the external potential experienced by the
electrons can be approximated to a homogeneous potential fairly good. Thus one can
conclude that approximating the total disorder potential by Gaussians is not sufficient to
recover the long range part. Similar arguments are also found in the literature [6, 9, 24].
In order to overcome the difference observed at the long range potential fluctuations
Disorder in screening theory
4
between the Coulomb and the Gaussian impurities, the following procedure is applied:
First we calculate the total disorder potential considering many impurities then we
perform a two-dimensional Fourier transformation of the Coulomb potential and make
a back transformation keeping the first few momentum q components in each direction,
hence only the long range part of the potential is left [24]. Then we add the long range
part of the Coulomb potential to the potential created by donors, i.e. to the confinement
potential. We take this as a motivation to simulate the short range part of the impurity
potential by Gaussian impurities, and calculate the Landau level broadening and the
conductivities, described within the self-consistent Born approximation (SCBA) [25].
Here we point to the effect of the spacer thickness on the impurity potential
experienced in the plane of 2DES. It is well known from experimental and theoretical
investigations that, if the distance between the electrons and donors is large, the mobility
is relatively high and it is usually related with suppression of the short range fluctuations
of the disorder potential. These results agree with the experimental observations of
high mobility samples and are easy to understand from the z dependence of the Fourier
expansion of the Coulomb potential,
(cid:90)
V (cid:126)q(z) =
d(cid:126)re−i(cid:126)q·(cid:126)r
N(cid:88)
j
(cid:112)((cid:126)r − (cid:126)rj)2 + z2
e2/¯κ
=
2πe2
¯κq
e−qzN S((cid:126)q),
(1)
where S((cid:126)q) contains all the information about the in-plane donor distribution and N
is the total number of the ionized donors. We observe that if the spacer thickness is
increased, the amplitude of the potential decreases rapidly. We also see that the short
range potential fluctuations, which correspond to higher order Fourier components, are
suppressed more efficiently.
Next, we discuss electronic screening of the external potential created by the donors
discussed above. For a dielectric material the relation between the external and the
screened potentials are given by,
scr = V q
V q
ext/(q),
(2)
where (q) is the dielectric function and is given by (q) = 1 + 2πe2D0
, with the constant
¯κq
2D density of states D0 = m/(π2) in the absence of an external B field, and is known
as the Thomas-Fermi (TF) function. The simple linear relation above, together with
the TF dielectric function essentially describes the electronic screening of the Coulomb
potential given in Eq. 1, if there are sufficient number of electrons [9] (nel > 0.1 · 1015
m−2). Consider a case where the q component approaches to zero, then the external
(damped) potential is well screened, hence the long range part of the disorder potential.
Whereas, the short range part remain unaffected, i.e. high q Fourier components. Now
we turn our attention to the second type of impurities considered, the Gaussian ones.
As well known, the Fourier transform of a Gaussian is also of the form of a Gaussian,
therefore, similar arguments also hold for this kind of impurity.
We should emphasize once more the clear distinction between the effect of the
spacer on the external potential and the screening by the 2DES, i.e. via (q). The
Disorder in screening theory
5
Figure 1. Schematic representation of the crystal, which we investigate numerically.
The crystal is grown on a thick GaAs substrate, where the 2DES is formed at the
interface of the AlGaAs/GaAs hetero-junction. The top AlGaAs layer is doped
with Silicon 30 nm above the interface. The crystal is spanned by a 3D matrix
(128 × 128 × 60).
former depends on the Fourier transform of the Coulomb potential and the important
effect is the different decays of the different Fourier components (see Eq. 1), so that the
short range part of the disorder potential is well dampened, whereas the latter depends
on the relevant DOS of the 2DES and the screening is more effective for the long range
part.
We continue our investigation by solving the 3D Poisson equation iteratively for
randomly distributed single impurities, where three descriptive parameters (i.e.
the
number of impurities, the amplitude of the impurity potential and the separation
thickness) are analyzed separately. Next, we discuss the long range parts of the potential
fluctuations investigating the Coulomb interaction of the 2DES, numerically. The range
is estimated from these investigations by performing Fourier analysis and is related to
the samples used in experiments [15, 16] (Sec. 4).
2.2. 3D simulations
In the previous section we took a rather simple way to study the effect of interactions
by assuming an homogeneous 2DES and screening is handled by the TF dielectric
function. Here, we present our results obtained from a rather complicated numerical
method. We solve the Poisson equation in 3D starting from the material properties
of the wafer at hand, the typical material we consider is sketched in Fig. 1. Namely,
using the growth parameters, we construct a 3D lattice where the potential and the
charge distributions are obtained iteratively assuming open boundary conditions, i.e.
V (x → ±∞, y → ±∞, z → ±∞) = 0. For such boundary conditions, we chose a lattice
size which is considerably larger than the region that we are interested in. We preserve
the above conditions within a good numerical accuracy (absolute error of 10−6). A forth
order grid approach [28] is used to reduce the computational time, which is successfully
used to describe similar structures [29].
Figure 1 presents the schematic drawing of the hetero-structure which we are
interested in. The donor layer is δ− doped by a density of 3.3×1016 m−2 (ionized) Silicon
Disorder in screening theory
6
Figure 2. (a) Electron density fluctuation considering 3300 impurities 30 nm above
the electron gas. (b) The long-range part, arrows are to guide the distance between
two maxima. The calculation is repeated for 50 random distributions, which lead to a
similar range.
Vimp
zD
atoms, ∼ 30 nm above the 2DES, which provide electrons both for the potential well at
the interface and the surface. It is worthwhile to note that most of the electrons (∼ %90)
escape to the surface to pin the Fermi energy to the mid-gap of the GaAs. In any case,
for such wafer parameters there are sufficient number of electrons (nel (cid:38) 3.0× 1015 m−2)
at the quantum well to form a 2DES. To investigate the effect of impurities we place
positively charged ions at the layer where donors reside. From Eq. 1 we estimate the
amplitude of the potential of a single impurity to be e2
= 0.033 eV and assume that
κ
some percent of the ionized donors are generating the disorder potential, that defines the
long range fluctuations. In our simulations we perform calculations for a unit cell with
areal size of 1.5 µm×1.5 µm which contains 3.3×1016 donors per square meters, thus with
10 percent disorder we should have NI ∼ 3300 impurities. Figure 2a depicts the actual
density distribution, when considering 3300 impurities, whereas Fig. 2b presents only
the long range part of the density fluctuation. The arrows show the average distance
between two maxima, which is calculated approximately to be 550 nm. To estimate
an average range of the disorder potential, we repeated calculations for such randomly
distributed impurities, where number of repetitions scales with
NI. Such a statistical
investigation, sufficiently ensembles the system to provide a reasonable estimation of
the long range fluctuations. We also tested for larger number of random distributions,
however, the estimation deviated less than tens of nanometers. We show our main result
of this section in Fig. 3, where we plot the estimated long range part of the disorder
potential considering various number of impurities NI and impurity potential amplitude
Vimp. Our first observation is that the long range part of the total potential becomes
less when NI becomes large, not surprisingly. However, the range increases nonlinearly
while decreasing NI, obeying almost an inverse square law and tend to saturate at highly
disordered system. When fixing the distributions and NI, and changing the amplitude
of the impurity potential we observe that for large amplitudes the range can differ as
√
Disorder in screening theory
7
Figure 3. Statistically estimated range of the density fluctuations as a function of
number of impurities, considering various impurity strengths (a) and spacer thicknesses
(b). The calculations are done at zero temperature considering Coulomb impurities.
The long range potential fluctuations become larger than the size of the unit cell if one
considers less than %5 disorder.
large as 200 nm at all impurity densities. We found that for impurity concentration
less than %3, the range of the potential is larger than the unit cell we consider, i.e
R > 1.5µm. In contrast to the long range part, the short range part is almost unaffected
by the impurity concentration, however, is affected by the amplitude. Therefore, while
defining the conductivities we will focus our investigation on Vimp. Another important
result is that the estimates of long range fluctuations does not depend strongly on
the spacer thickness, if one keeps the amplitude of single impurity potential amplitude
fixed, Fig. 3b. All of the above numerical observations coincide fairly good with our
analytical investigations in the previous section. However, the range dependency on
the impurity concentration cannot be estimated with the analytical formulas given. We
should also note that, similar or even complicated numerical calculations are present in
the literature [6, 7]. A indirect measure of the screening effects on the potential can also
be inferred by capacitance measurements, supported by the above calculation scheme
in the presence of external field [14].
Next section is devoted to investigate the widths of the quantized Hall plateaus
utilizing our findings. We consider mainly two "mobility" regimes, where the long range
fluctuations is at the order of microns (high mobility) and is at the order of few hundred
nanometers, low mobility. However, the amplitude of the total potential fluctuations
will be estimated not only depending on the number of impurities but also depending
on the spacer thickness, range and amplitude of single impurity potential.
3. Quantized Hall plateaus
The main aim of this section is to provide a systematic investigation of the quantized
Hall plateau (QHP) widths within the screening theory of the IQHE [20], therefore
here we summarize the essential findings of the mentioned theory. In calculating the
Disorder in screening theory
8
QHPs one needs to know local conductivities, namely the longitudinal σl(x, y) and the
transverse σH(x, y). To determine these quantities it is required to relate the electron
density distribution nel(x, y) to the local conductivities explicitly. Here we utilize
the SCBA [25]. However, the calculation of the electron density and the potential
distribution including direct Coulomb interaction is not straightforward, one has to
solve the Schrodinger and the Poisson equations simultaneously. This is done within
the Thomas-Fermi approximation which provides the following prescription to calculate
the electron density
nel(x, y) =
dED(E)
1
e(EF −V (x,y))/kBT + 1
,
(3)
(cid:90)
(cid:90)
2e2
¯κ
where D(E) is the appropriate density of states calculated within the SCBA, where kB
is the Boltzmann constant and T temperature. The total potential is obtained from
V (x, y) =
(4)
and the Kernel K(x, y, x(cid:48), y(cid:48)) is the solution of the Poisson equation satisfying the
boundary conditions to be discussed next.
dxdyK(x, y, x(cid:48), y(cid:48))nel(x, y),
In the following we assume a translation in variance in y-direction and implement
the boundary conditions V (−d) = V (d) = 0 (2d being the sample width), proposed
by Chklovskii et.al. [11], such a geometry allows us to calculate the Kernel in a closed
form. Hence, Eqs. (3) and (4) forms the self-consistency. For a given initial potential
distribution, the electron concentration can be calculated at finite temperature and
magnetic field, where the density of states D(E) contains the information about the
quantizing magnetic field and the effect of short range impurities. Here we implicitly
assume that the electrons reside in the interval −b < x < b (where, dl = d−b/d is called
the depletion length), and is fixed by the Fermi energy, i.e. the number of electrons,
hence donors. As a direct consequence of Landau quantization and the locally varying
electrostatic potential, the electronic system is separated into two distinct regions, when
solving the above self-consistent equations iteratively:
i) The Fermi energy equals to
(spin degenerate) Landau energy and due to DOS the system illustrates a metallic
behavior, the compressible region, ii) The insulator like incompressible region, where
EF falls in between two consequent eigen-energies and no states are available [11, 30].
It is usual to define the filling factor ν, to express the electron density in terms of
the applied B field as, ν = 2πl2nel. Since all the states below the Fermi energy are
occupied the filling factor of the incompressible regions correspond to integer values
(e.g. ν = 2, 4, 6...), whereas the compressible regions have non-integer values, due
to partially occupied higher most Landau level. The spatial distribution and widths
of these regions are determined by the confinement potential [11], magnetic field [31],
temperature [32] and level broadening [19, 20]. For the purpose of the present work we
fix the confinement potential profile by confining ourselves to the Chklovskii geometry
and keeping the donor concentration (and distribution) constant. Moreover we perform
our calculations at a default temperature given by kBT /E0
F is the
F = 0.02, where E0
Disorder in screening theory
9
Figure 4. The Hall resistances versus magnetic field, calculated at default temperature
and considering a 10 µm sample for different ranges of the single impurity potential.
Inset depicts a larger B field interval, where ν = 4 plateau can also be observed.
Fermi energy calculated for the electron concentration at the center of the sample and
is typically similar to 10 meV.
The next step is to calculate the global resistances, i.e. the longitudinal RL and Hall
RH resistances, starting from the local conductivity tensor elements. Such a calculation
is done within a relaxed local model that relates the current densities j(x, y) to the
electric fields E(x, y), namely the local Ohm's law:
j(x, y) = σ(x, y)E(x, y).
(5)
The strict locality of the conductivity model is lifted by an spatial averaging process [20]
over the quantum mechanical length scales and an averaged conductivity tensor σ(x, y)
is used to obtain the global resistances. It should be emphasized that, such an averaging
process also simulates the quantum mechanical effects on the electrostatic quantities. To
be explicit: if the widths of the current carrying incompressible strips become narrower
than the extend of the wave functions, these strips become "leaky" which can not
decouple the two sides of the Hall bar and back-scattering takes place. Therefore, to
simulate the "leakiness" of the incompressible strips we perform coarse-graining over
quantum mechanical length scales.
Now let us relate the local conductivities with the local filling factors. Since the
compressible regions behave like a metal within these regions there is finite scattering
Disorder in screening theory
10
dl = 70 nm Rg = 10 nm 20 nm 40 nm 80 nm
0.050
2d= 2 µm
0.035
0.020
0.010
0.010
0.120
0.125
0.115
0.095
0.085
0.120
0.135
0.140
0.135
0.130
0.100
0.090
0.070
0.050
0.040
3 µm
5 µm
8 µm
10 µm
leading to finite conductivity.
In contrast, within the incompressible regions the
back-scattering is absent, hence, the longitudinal conductivity (and simultaneously
resistivity) vanishes. Therefore, all the imposed current is confined to these regions.
The Hall conductivity, meanwhile is just proportional to the local electron density.
The explicit forms of the conductivity tensor elements are presented elsewhere [20].
Having the electron density and local magneto-transport coefficients at hand, we perform
calculations to obtain the widths of the quantized Hall plateaus utilizing the above
described, microscopic model assisted by the local Ohm's law at a fixed external current
I. Further details of the calculation scheme is reviewed in Ref. [23].
3.1. Single impurity potentials: Level broadening and conductivities
Since the very early days of the charge transport theory, collisions played an important
role. Such a scattering based definition of conduction also applies for the system at
hand, i.e. a two-dimensional electron gas subject to perpendicular magnetic field.
Among many other approaches [33, 19, 27] the SCBA emerged as a reasonable model to
describe the DOS assuming Gaussian impurities, considering short range scattering. A
single impurity has two distinct parameters that represents the properties of the resulting
potential, the range Rg (at the order of separation thickness) and the amplitude of the
potential (in relevant units), (cid:101)Vimp. However, these two parameters are not enough to
define the widths of the Landau levels (Γ), another important parameter is the number
of the impurities, NI. In the previous section we have already investigated these three
parameters in scope of potential landscape, now we utilize our findings to define the
level widths and the conductivities. It is more convenient to write the single impurity
potential of the form,
(cid:101)Vimp
πR2
g
Vg(r) =
exp (− r2
R2
g
).
(6)
NI(cid:101)V 2
(cid:113) 4NI(cid:101)V 2
3
Together with the impurity concentration, the relaxation time is defined as τ0 =
impm∗
and in the limit of delta impurities (i.e. Rg → 0) the Landau level width Γ takes the
form Γ =
. It is useful to define the impurity strength parameter to investigate
the effect of disorder by
2πl2
imp
I = (Γ/ωc)2 =
γ2
,
(7)
2NI(cid:101)V 2
impm
π3ωc
Disorder in screening theory
11
dl = 150 nm Rg = 10 nm 20 nm 40 nm 80 nm
0.075
2d= 2 µm
0.055
0.035
0.020
0.015
0.140
0.160
0.180
0.180
0.175
3 µm
5 µm
8 µm
10 µm
0.140
0.150
0.150
0.130
0.120
0.125
0.120
0.095
0.070
0.060
Table 1. The ν = 2 plateau widths obtained at default temperature for two depletion
lengths dl (left 75 nm, right 150 nm), while γI = 0.05 is fixed (defined in Eq. 7 and
the related text below). The widths are given in units of ωc/E0
F = Ωc/E0
F .
given in units of magnetic energy ωc =
fix the magnetic energy at 10 T.
eB
m = Ωc and as a normalization parameter we
At this point we would like to make a remark on the concepts short/long range
impurities and short/long range potential fluctuations, which is commonly mixed. By
short range impurity potential we mean that Rg (cid:46) l, however, by short range potential
fluctuation a length scale of the order of 200 − 300 nm is meant. The long range
impurity potential corresponds to Rg > l and long range potential fluctuation is of
the order of micrometers. Thus, when considering short range impurities the potential
fluctuations may be long range, if NI is not large (< %5 of the donor concentration).
We have also observed that, the long-range potential fluctuations are more efficiently
screened by the 2DES and their range can be at the order of 500 nm at most, when
assuming large impurity concentration, i.e. NI > %10. In light of the above findings
and formulation we now investigate the widths of the quantized Hall plateaus. Figure 4
presents the calculated Hall resistances at a fixed temperature for typical single impurity
ranges. We observe that, when increasing Rg the plateau widths remain approximately
the same, with a small variation, which is in contrast to the experimental findings,
if the system is low mobility (small Rg ⇒ highly broadened DOS) the plateau
i.e.
are larger.
In fact changing Rg from 10 nm to 20 nm should increase the zero B
field mobility almost an order of magnitude, when fixing the other parameters (see
e.g table I of Ref. [20]). The contradicting behavior is due to the fact that the levels
become broader when increasing the single impurity range, therefore the incompressible
strips become narrower, which results in a narrower plateau. However, the long range
potential fluctuations are completely neglected, therefore the effect(s) of disorder on
the quantized Hall plateaus cannot be described in a complete manner. To investigate
the effect of the single impurity range we systematically calculated the plateau widths;
table 1 depicts the calculated widths of the Hall plateaus considering different sample
widths, depletion lengths, filling factors and Rg. One sees that the plateau widths are
affected by the increase of impurity range, however, in a completely wrong direction, i.e.
plateaus become narrower when decreasing the mobility. As we show in the next section,
it is not sufficient to describe mobility only considering the range of a single impurity.
Moreover, we also show that the other two parameters defining B = 0 mobility are either
Disorder in screening theory
12
Figure 5. The calculated Hall resistances at default temperature assuming a 5 µm
sample considering three characteristic value of broadening parameter. The lowest
mobility (γI =0.3) shows the narrowest plateau.
not important or behaves in the opposite direction when calculating the resistances.
Next we investigate the effect of the remaining two parameters, (cid:101)Vimp and NI.
However, these two parameters both effect the level width simultaneously, thereby the
widths of the incompressible strips. Hence, one cannot to distinguish their influence
on the QHPs separately. Typical Hall resistances are shown in Fig. 5 calculated at
default temperature considering different impurity parameters. Similar to the range
parameter, we observe that the plateau widths become narrower when the mobility is
low, which also points that our single particle based level broadening calculations are
not in the correct direction. Such a behavior is easy to understand, when we decrease
the mobility either by increasing the impurity concentration or by the amplitude of the
impurity potential, the Landau levels become broader due to collisions. This means that,
both the energetic and spatial gap between two consequent levels is reduced, hence the
resulting incompressible strips are also narrower and fragile even at low temperatures. A
detailed investigation on the incompressible widths depending on impurity parameters
are reported in Ref. [19]. It is known that if there exists an incompressible strip wider
than the Fermi wavelength the system is in the quantized Hall regime [20], therefore, if
the gap is reduced the incompressible strips are smeared, thus the quantized Hall plateau
vanish. As a general remark on the single particle theories, we should note that such a
Disorder in screening theory
13
reduced gap is also a gross problem for the non-interacting models [34, 35, 36], however,
one can overcome this discrepancy by making localization assumptions [1]. Namely,
one assumes that even within the broadened Landau levels there are states, which are
localized, therefore electrons cannot contribute to transport. Hence, although the gap
is small (levels are broad) these localized states serves as a reasonable candidate to
explain the low mobility behavior. In the early days of IQHE it was a great challenge to
describe and observe these localized states [3]. Recent experiments [37, 38, 15, 39] show
clearly that, the localization assumptions are not relevant in all the cases, i.e. narrow
and high mobility samples. Moreover, the universal behavior of the localization length
dictated by these theories fail [40]. An explicit treatment of the activation energy [41]
and critical exponents are left to an other publication.
3.2. Size effects on plateau widths
Another important parameter in defining the plateau widths is the depletion length
dl. The slope of the confinement potential close to the edges essentially determines the
widths of the incompressible strips [11], which in turn determines the plateau widths.
In Fig. 6 we show the ν=2 plateau calculated for two different depletion lengths, we
see that for the larger depletion the plateau is more extended. Since, the larger the
depletion is, the smoother the electron density is. Therefore, resulting incompressible
strips are wider, hence the plateau. Such an argument will fail if one considers a
highly disordered large sample, which we discuss in Sec. 3.3. Next, we compare the
plateau widths of different sample sizes while keeping constant the disorder parameters
and depletion length. Figure 6 depicts the sample size dependency of ν = 2 plateau
width. It is seen that the larger samples present wider plateaus, if the magnetic field
is normalized with the center Fermi energy, E0
F . One can understand this by similar
arguments given above, i.e.
if the sample is narrow the variation of the confinement
potential is stronger, therefore the incompressible strips become narrower, hence, the
plateaus. The discrepancy between the experimental results and the screening theory
of the IQHE is solved if one considers not only the single impurity potentials but also
the overall disorder potential landscape generated by the impurities. In the next part
of this section, we investigate the effect of the long range potential fluctuations on the
quantized Hall plateaus and find that, when the mobility is reduced the plateaus become
wider and stabile, as it is observed in many experiments, (see e.g. Refs. [42, 15, 16]).
3.3. Many many impurities: Potential fluctuations
So far we have investigated the effect of single impurity potentials on the overall
potential landscape in Sec. 2.2 and on the widths of the plateaus in Sec. 3.1. We
have seen that, at high impurity concentration the overall potential fluctuates over a
length scale of couple of hundred nanometers, whereas for low NI concentration such
length scale can be as large as micrometers. Now we include the effect of this long range
potential fluctuations into our screening calculations via modulation potential defined
Disorder in screening theory
14
Figure 6.
a) The calculated Hall resistances at a large B interval at default
temperature, setting 2d = 5 µm, Rg = 20 nm and γI = 0.05, while changing the
It is clearly seen that depletion length is much more important
depletion length.
than the single impurity parameters in determining the plateau widths.
(b) The
direct comparison of the plateau widths considering different sample sizes. The
impurity parameters and depletion lengths are kept constant. Calculations are done
at kBT /E0
F = 0.02, whereas the donor density is 4 × 1015 m−2 for all sample sizes.
Disorder in screening theory
15
Figure 7.
Self-consistently obtained Hall resistances for a modulated system
considering a sample of 3 µm. The depletion lengths and other single impurity
parameters are kept fixed, whereas the parity of the modulation period is set 5.
2d
as Vmod(x) = V0 cos ( 2πxmp
) where, the modulation period mp, is chosen such that the
boundary conditions are preserved. At the moment, we consider two modulation periods
regardless of the sample width and vary the amplitude of the modulation potential. In
the next section, however, we select these two parameters from our estimations obtained
in Sec. 2 and Sec. 2.2.
Figure 7 depicts the self-consistently calculated Hall resistances, considering
different modulation amplitudes V0 for a fixed sample width (2d = 3 µm) and mp = 5.
We observe that, the plateaus become wider from the high B field side, when V0
is increased, i.e mobility is reduced. Such a behavior is now consistent with the
experimental findings. Since the QHPs occur whenever an incompressible strip is
formed (somewhere) in the sample and the modulation forces the 2DES to form an
incompressible strip at a higher magnetic field, therefore the plateau is also extended
up to higher field compared with the (approximately) non-modulated calculation,
V0/E0
F < 0.1.
Our investigation of the impurities lead us to conclude that, one has to define
mobility at high magnetic fields also taking into account screening effects in general
and furthermore also the geometric properties of the sample such as the width and
depletion length. As an example if we consider an impurity concentration of ≈ %1
the long range part of the potential fluctuation can be approximated to 900 nm.
However, note that the amplitude of this fluctuation varies between %5 − 25 of the
Fermi energy, considering different separation thicknesses, therefore the wafer changes
from low mobility to intermediate one. Another important parameter is the number of
modulations within the system: a sample with an extend of 2 µm and V0/EF = 0.1
Disorder in screening theory
16
mobility
low
intermediate 1
intermediate 2
high
mp (10 µm) mp (2 µm) V0/E0
F
0.5
0.5
0.05
0.05
19-20
9-10
19-20
9-10
5-6
2-3
5-6
2-3
Table 2. A qualitative comparison of the mobility in the presence of magnetic field
also taking into account self-consistent screening. Mobility also depends on the size of
the sample when screening is also considered.
is a high mobility sample with the same mp (only 2 maximum), however, sample with
a width of 10 µm is low mobility (10 maximum).
In the next section we study the
plateau widths of different mobility samples, while keeping constant the extend and the
amplitude of long range potential fluctuations (i.e. V0 and mp) and short range impurity
parameters ((cid:101)Vimp, NI and Rg) under experimental conditions.
4. Discussion:Comparison with the experiments
In this final section, we harvest our findings of the previous sections to make quantitative
estimations of the plateau widths, considering narrow gate defined samples. Our aim is
to show the qualitative and quantitative differences between "high" and "low" mobility
samples, by taking into account properties of the single impurity potentials and the
resulting disorder potential. The experimental realizations of these samples are reported
in the literature [15, 16]. We estimated in Sec. 2.2 that, the range of the potential
fluctuations is (cid:46) 500 nm for low mobility (NI > 3300) and is (cid:38) 1 µm at high mobility.
Therefore, the modulation period is chosen such that many oscillations correspond to
low mobility, and few oscillations correspond high mobility. As an specific example let
us consider a 10 µm sample, for the low mobility we choose mp = 19 − 20 and for
the high mobility mp is taken as 9 or 10. The amplitude of the disorder potential is
damped to %50 of the Fermi energy when considering the effect of spacer thickness,
however, including screening this amplitude is further reduced to few percents.
In
light of this estimations the low mobility will be presented by a modulation amplitude
of V0/E0
F = 0.05. Therefore, we
have 4 different combinations of the disorder potential parameters yielding four different
mobilities considering two sample widths, as tabulated in table 2. The second important
aspect of the disorder is the single impurity parameters, for low mobility set we choose
Rg = 20 nm and γI = 0.3, whereas for high mobility Rg = 10 nm and γI = 0.05 is
set. Remember that, the range of the single impurity is much less important than γI in
determining the plateau width (see sec. 3.1).
F = 0.5, whereas high mobility corresponds to V0/E0
Figure 8 summarizes our results considering above discussed mobility regimes for
two different sample widths. In Fig. 8a, we show the calculated Hall resistances for a
sample of 10 microns with the highest mobility (solid (black) line) and intermediate
Disorder in screening theory
17
1 mobility (broken (red) line). The solid line is the highest mobility since the range
of the fluctuations are at the order of 1 µm and the amplitude of the modulation
potential is five percent of the Fermi energy. The broken line presents the intermediate
mobility considering a modulation amplitude of fifty percent. We observe that the
lower mobility wafer presents a larger quantized Hall plateau, which is now in complete
agreement with the experimental results. Moreover, our calculation scheme is free of
localization assumptions in contrast to the known literature and we only considered a
very limited level broadening, i.e. γI = 0.05. In fact our results also hold for Dirac-delta
Landau levels, however, for the sake of consistency we choose the broadening parameters
according to the selected disorder parameters. In Fig. 8c, we show two curves for even
lower mobilities, the solid line corresponds to the intermediate 2 case, whereas the
broken line is the lowest mobility considered here. The potential fluctuation range (i.e.
the modulation period) is chosen to present the low mobility wafer. We again see that
for the lowest mobility the quantized Hall plateau is enlarged considerably from both
edges of the plateau. These results explicitly show that the quantized Hall plateaus
become broader if one strongly modulates the electronic system by long range potential
fluctuations, either by changing the range or the amplitude of the modulation. Similar
results are also obtained for a relatively narrower sample 2d = 3 µm, Fig. 8b and 8d,
however, we see that decreasing the range of the potential fluctuation is more efficient
in enlarging the quantized Hall plateaus when compared to the effect of the amplitude
of the modulation.
The last interesting investigation is on the parity of the modulation period, i.e.
whether mp is odd or even. Figure 9 presents the different behavior when considering
even (a) or odd (b) periods. Here, all the disorder parameters are kept fixed, other than
the parity. We see that for the even parity the plateau is shifted towards the high field
edge, both for ν = 2 and 4, whereas for the odd parity the plateau is enlarged from
both sides. This tendency is also observed for the larger sample (not shown here). We
attribute this behavior again to the formation of the incompressible strips, however, this
time only to the one residing at the center of the sample, i.e. the bulk incompressible
strip. The picture is as follows: If the maxima of the modulation potential is at the
center of the sample, the incompressible strip is formed at a higher magnetic field value,
whereas, the edge incompressible strips become narrower at the lower field side. Hence,
due to the larger incompressible strip at the bulk of the sample the plateau is shifted to
the higher field, in contrast, due to the narrower (compared to the unmodulated system)
edge strips the plateau is cut off at higher fields. Since, the edge incompressible strip
becomes narrower than the extend of the wave function. For the odd parity, the edge
incompressible strips become wider, therefore, the plateau extends to the lower B fields.
The enhancement at the high field edge results from the two maximum in the proximity
of the center. For a better visualization of the incompressible strip distribution we
suggest reader to look at Fig.2 of Ref. [24] and Fig.1 of Ref. [43]. Such a shift of the
quantized Hall plateaus is also reported in the literature [42] and is attributed to the
asymmetrical density of states due to the acceptors in the system [44]. We claim that,
Disorder in screening theory
18
Figure 8. Line plots of the Hall resistance as a function of magnetic field considering
two sample widths (2d = 10 µm left panels, 2d = 3 µm right panels) and impurity
concentrations (∼ %3 (a) and (b), ∼ %20 (c) and (d)). Here the single impurity
parameters are calculated from Eq. 7, otherwise other parameters are the same.
the shift due to the modulation parity change observed in our calculations overlap with
their findings. Note that in our calculations we only consider symmetric DOS, however,
replacing a maxima with a minima at the confinement potential corresponds to the
acceptor behavior of the dopants. A systematic experimental investigation is suggested
to understand the underlying physical mechanism, where the system is doped with small
number of acceptors.
5. Conclusion
In this work we tackled with the long standing and widely discussed question of the effect
of disorder on the quantized Hall plateaus. The distinguishing aspect of our approach
relies on the separate treatment of the long and short range of the disorder potential. We
show that assuming Gaussian impurities is not sufficient to describe long range potential
fluctuations, however, is adequate to give a prescription in defining the density of states
broadening and conductivities. The discrepancy in handling the long range potential
fluctuations is cured by the inclusion of a modulation potential to the self-consistent
calculations. We estimated the range of these fluctuations from our analytical and
numerical calculations considering the effect of dielectric spacer and the screening of the
Disorder in screening theory
19
Figure 9. Even-odd parity dependency of the Hall plateaus at high impurity
concentration. (a) corresponds to a "acceptor" doped wafer, whereas in (b) the ionized
impurities are positively charged.
2DES. It is observed that spacer damps the short range fluctuations effectively, whereas
the direct Coulomb interaction is dominant in screening the long range fluctuations.
Utilizing the estimations of the range and the amplitude of potential fluctuations, we
classified mobility in four groups and calculated the Hall resistances within the screening
theory of the quantized Hall effect. We found that the Hall plateaus are wider when
decreasing the mobility, not surprisingly. However, the most important point of our
theory is that, we do not consider any localization assumptions, still obtain correct
behavior of the plateau widths. We show that B = 0 and/or short range impurity
defined mobility is not adequate to describe the actual mobility at high magnetic fields,
moreover, one has to include geometrical properties of the sample at hand.
A natural persecutor theoretical investigation of the present work should deal with
the activated behavior of the longitudinal resistance within the screening theory. As
it is well known, the properties of the localized states, e.g. the localization length, is
usually obtained from the activation experiments [45]. Moreover, spin generalization of
the screening theory [46] is necessary to describe and investigate odd integer quantized
plateaus also considering level broadening, namely disorder.
Disorder in screening theory
Acknowledgments
20
One of the authors (A.S.) would like to thank E. Ahlswede, S. C. Lok and J. Weiss for the
enlightening discussions on the disorder from "an experimentalist" point of view. The
Authors acknowledges, the Feza-Grsey Institute for supporting the III. Nano-electronic
symposium, where this work has been conducted partially and would like to acknowledge
the Scientific and Technical Research Council of Turkey (TUBITAK) for supporting
under grant no 109T083.
References
[1] B. Kramer, S. Kettemann, and T. Ohtsuki. Localization in the quantum hall regime. Physica E,
20:172, 2003.
[2] L. Schweitzer, B. Kramer, and A. MacKinnon. Selective probing of ballistic electron orbits in
rectangular antidot lattices. Z. Physik B, 59:379, 1985.
[3] W. Cai and C. S. Ting. Screening effect on the landau-level broadening for electrons in gaas-gaalas
heterostructures. Phys. Rev. B, 33:3967, 1986.
[4] T. Ando and Y. Uemura. J. Phys. Soc. Japan, 36:959, 1974.
[5] T. Ando, Y. Matsumoto, and Y. Uemura. J. Phys. Soc. Japan, 39:279, 1975.
[6] J. A. Nixon and J. H. Davies. Potential fluctuations in heterostructure devices. Phys. Rev. B,
41:7929 -- 7932, April 1990.
[7] M. Stopa and Y. Aoyagi. Effect of donor layer ordering on the formation of single mode quantum
wires. Physica B Condensed Matter, 227:61 -- 64, September 1996.
[8] M. M. Fogler and B. I. Shklovskii. Resistance of a long wire in the quantum hall regime. Phys.
Rev. B., 50:1656, 1994.
[9] A. L. Efros. Non-linear screening and the background density of 2deg states in magnetic field.
Solid State Commun., 67:1019, 1988.
[10] M. Buttiker. Four-terminal phase-coherent conductance. Phys. Rev. Lett., 57:1761, 1986.
[11] D. B. Chklovskii, B. I. Shklovskii, and L. I. Glazman. Electrostatics of edge states. Phys. Rev.
B, 46:4026, 1992.
[12] S. Datta. In Electronic Transport in Mesoscopic Systems, Cambridge, 1995. University press.
[13] N. Ruhe, J. I. Springborn, C. Heyn, M. A. Wilde, and D. Grundler. Simultaneous measurement of
the de Haas-van Alphen and the Shubnikov-de Haas effect in a two-dimensional electron system.
Phys. Rev. B, 74(23):235326 -- +, December 2006.
[14] Jiri J Mares, Afif Siddiki, Dobroslav Kindl, Pavel Hubik, and Jozef Kristofik. Electrostatic
screening and experimental evidence of a topological phase transition in a bulk quantum hall
liquid. New Journal of Physics, 11(8):083028, 2009.
[15] J. Horas, A. Siddiki, J. Moser, W. Wegscheider, and S. Ludwig. Investigations on unconventional
aspects in the quantum Hall regime of narrow gate defined channels. Physica E Low-Dimensional
Systems and Nanostructures, 40:1130 -- 1132, March 2008.
[16] A. Siddiki, J. Horas, J. Moser, W. Wegscheider, and S. Ludwig. Interaction mediated asymmetries
of the quantized Hall effect. ArXiv e-prints:0905.0204[cond-mat.mes-hall], May 2009.
[17] E. H. Hwang and S. Das Sarma. Limit to two-dimensional mobility in modulation-doped GaAs
quantum structures: How to achieve a mobility of 100 million. Phys. Rev. B, 77(23):235437 -- +,
June 2008.
[18] S. J. MacLeod, K. Chan, T. P. Martin, A. R. Hamilton, A. See, A. P. Micolich, M. Aagesen,
and P. E. Lindelof. Role of background impurities in the single-particle relaxation lifetime of a
two-dimensional electron gas. Phys. Rev. B, 80(3):035310 -- +, July 2009.
[19] K. Guven and R. R. Gerhardts. Self-consistent local-equilibrium model for density profile and
Disorder in screening theory
21
distribution of dissipative currents in a hall bar under strong magnetic fields. Phys. Rev. B,
67:115327, 2003.
[20] A. Siddiki and R. R. Gerhardts. Incompressible strips in dissipative hall bars as origin of quantized
hall plateaus. Phys. Rev. B, 70:195335, 2004.
[21] A. Siddiki. Self-consistent coulomb picture of an electron-electron bilayer system. Phys. Rev. B,
75:155311, 2007.
[22] A. Siddiki and R. R. Gerhardts. The interrelation between incompressible srtips and quantized
hall plateaus. Int. J. Mod. Phys. B, 18:3541, 2004.
[23] R. R. Gerhartds. The effect of screening on current distribution and conductance quantisation in
narrow quantum Hall systems. Phys. Stat. Sol.b, 245:378, January 2008.
[24] A. Siddiki and R. R. Gerhardts. Range-dependent disorder effects on the plateau-widths calculated
within the screening theory of the iqhe. Int. J. of Mod. Phys. B, 21:1362, 2007.
[25] T. Ando, A. B. Fowler, and F. Stern. Electronic properties of two-dimensional systems. Rev.
Mod. Phys., 54:437, 1982.
[26] T. Champel, S. Florens, and L. Canet. Microscopics of disordered two-dimensional electron gases
under high magnetic fields: Equilibrium properties and dissipation in the hydrodynamic regime.
Phys. Rev. B, 78(12):125302 -- +, September 2008.
[27] T. Kramer. a Heuristic Quantum Theory of the Integer Quantum Hall Effect.
International
Journal of Modern Physics B, 20:1243 -- 1260, 2006.
[28] A. Weichselbaum and S. E. Ulloa. Potential landscapes and induced charges near metallic islands
in three dimensions. Phys. Rev E, 68(5):056707 -- +, November 2003.
[29] S. Arslan, E. Cicek, D. Eksi, S. Aktas, A. Weichselbaum, and A. Siddiki. Modeling of quantum
point contacts in high magnetic fields and with current bias outside the linear response regime.
Phys. Rev. B, 78(12):125423 -- +, September 2008.
[30] A. Siddiki and R. R. Gerhardts. Thomas-fermi-poisson theory of screening for laterally confined
and unconfined two-dimensional electron systems in strong magnetic fields. Phys. Rev. B,
68:125315, 2003.
[31] K. Lier and R. R. Gerhardts. Self-consistent calculation of edge channels in laterally confined
two-dimensional electron systems. Phys. Rev. B, 50:7757, 1994.
[32] J. H. Oh and R. R. Gerhardts. Self-consistent thomas-fermi calculation of potential and current
distributions in a two-dimensional hall bar geometry. Phys. Rev. B, 56:13519, 1997.
[33] R. R. Gerhardts. Path-integral approach to the two-dimensional magneto-conductivity problem
ii application ... Z. Physik B, 21:285, 1975.
[34] R. B. Laughlin. Gauge gedankenexperiment iqhe. Phys. Rev. B, 23:5632, 1981.
[35] M. Buttiker. IBM J. Res. Dev., 32:317, 1988.
[36] B. I. Halperin. Self-consistent local-equilibrium model for density profile and distribution of
dissipative currents in a hall bar under strong magnetic fields. Phys. Rev. B, 25:2185, 1982.
[37] E. Ahlswede, P. Weitz, J. Weis, K. von Klitzing, and K. Eberl. Hall potential profiles in the
quantum hall regime measured by a scanning force microscope. Physica B, 298:562, 2001.
[38] S. Ilani, A. Yacoby, D. Mahalu, and H. Shtrikman. Unexpected behavior of the local
compressibility near the b=0 metal-insulator transition. Phys. Rev. Lett., 84:3133, 2000.
[39] G. A. Steele, R. C. Ashoori, L. N. Pfeiffer, and K. W. West.
Imaging Transport Resonances in
the Quantum Hall Effect. Physical Review Letters, 95(13):136804 -- +, September 2005.
[40] K. Slevin and T. Ohtsuki. Critical exponent for the quantum Hall transition. Phys. Rev. B,
80(4):041304(R), July 2009.
[41] S. Sakiroglu, U. Erkarslan, G. Oylumluoglu, A. Siddiki, and I. Sokmen. Microscopic theory of the
activated behavior of the quantized Hall effect. ArXiv e-prints:0906.0661[cond-mat.mes-hall],
June 2009.
[42] R. J. Haug, K. V. Klitzing, and K. Ploog. Analysis of the asymmetry in Shubnikov-de Haas
oscillations of two-dimensional systems. Phys. Rev. B, 35:5933 -- 5935, April 1987.
[43] A. Siddiki and R. R. Gerhardts. Nonlinear thomas-fermi-poisson theory of screening for a hall bar
Disorder in screening theory
22
under strong magnetic fields. In A. R. Long and J. H. Davies, editors, Proc. 15th Intern. Conf.
on High Magnetic Fields in Semicond. Phys., Bristol, 2002. Institute of Physics Publishing.
[44] R. J. Haug, R. R. Gerhardts, K. V. Klitzing, and K. Ploog. Effect of repulsive and attractive
scattering centers on the magnetotransport properties of a two-dimensional electron gas.
Physical Review Letters, 59:1349 -- 1352, September 1987.
[45] J. Matthews and M. E. Cage. Temperature Dependence of the Hall and Longitudinal Resistances
in a Quantum Hall Resistance Standard. J. Res. Natl. Inst. Stand. Technol., 110:497, October
2005.
[46] A. Siddiki. The spin-split incompressible edge states within empirical Hartree approximation at
intermediately large Hall samples. Physica E Low-Dimensional Systems and Nanostructures,
40:1124 -- 1126, March 2008.
|
1403.6483 | 2 | 1403 | 2015-02-11T10:35:58 | Dissipation enhanced vibrational sensing in an olfactory molecular switch | [
"cond-mat.mes-hall",
"physics.bio-ph",
"physics.chem-ph",
"quant-ph"
] | Motivated by a proposed olfactory mechanism based on a vibrationally-activated molecular switch, we study electron transport within a donor-acceptor pair that is coupled to a vibrational mode and embedded in a surrounding environment. We derive a polaron master equation with which we study the dynamics of both the electronic and vibrational degrees of freedom beyond previously employed semiclassical (Marcus-Jortner) rate analyses. We show: (i) that in the absence of explicit dissipation of the vibrational mode, the semiclassical approach is generally unable to capture the dynamics predicted by our master equation due to both its assumption of one-way (exponential) electron transfer from donor to acceptor and its neglect of the spectral details of the environment; (ii) that by additionally allowing strong dissipation to act on the odorant vibrational mode we can recover exponential electron transfer, though typically at a rate that differs from that given by the Marcus-Jortner expression; (iii) that the ability of the molecular switch to discriminate between the presence and absence of the odorant, and its sensitivity to the odorant vibrational frequency, are enhanced significantly in this strong dissipation regime, when compared to the case without mode dissipation; and (iv) that details of the environment absent from previous Marcus-Jortner analyses can also dramatically alter the sensitivity of the molecular switch, in particular allowing its frequency resolution to be improved. Our results thus demonstrate the constructive role dissipation can play in facilitating sensitive and selective operation in molecular switch devices, as well as the inadequacy of semiclassical rate equations in analysing such behaviour over a wide range of parameters. | cond-mat.mes-hall | cond-mat | Dissipation enhanced vibrational sensing in an olfactory molecular switch
Agata Chęcińska,1, a) Felix A. Pollock,2, a) Libby Heaney,1 and Ahsan Nazir3, 4
1)Centre for Quantum Technologies, National University of Singapore, Singapore 117543
2)Atomic & Laser Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU,
United Kingdom
3)Photon Science Institute and School of Physics & Astronomy, University of Manchester, Oxford Road,
Manchester M13 9PL, United Kingdom
4)Centre for Quantum Dynamics, Imperial College London, London SW7 2AZ,
United Kingdom
(Dated: September 4, 2018)
Motivated by a proposed olfactory mechanism based on a vibrationally-activated molecular switch, we study
electron transport within a donor-acceptor pair that is coupled to a vibrational mode and embedded in
a surrounding environment. We derive a polaron master equation with which we study the dynamics of
both the electronic and vibrational degrees of freedom beyond previously employed semiclassical (Marcus-
Jortner) rate analyses. We show: (i) that in the absence of explicit dissipation of the vibrational mode, the
semiclassical approach is generally unable to capture the dynamics predicted by our master equation due to
both its assumption of one-way (exponential) electron transfer from donor to acceptor and its neglect of the
spectral details of the environment; (ii) that by additionally allowing strong dissipation to act on the odorant
vibrational mode we can recover exponential electron transfer, though typically at a rate that differs from
that given by the Marcus-Jortner expression; (iii) that the ability of the molecular switch to discriminate
between the presence and absence of the odorant, and its sensitivity to the odorant vibrational frequency, are
enhanced significantly in this strong dissipation regime, when compared to the case without mode dissipation;
and (iv) that details of the environment absent from previous Marcus-Jortner analyses can also dramatically
alter the sensitivity of the molecular switch, in particular allowing its frequency resolution to be improved.
Our results thus demonstrate the constructive role dissipation can play in facilitating sensitive and selective
operation in molecular switch devices, as well as the inadequacy of semiclassical rate equations in analysing
such behaviour over a wide range of parameters.
I.
INTRODUCTION
Characterising the influence of the environment on the
transfer of charge and energy in an open quantum sys-
tem is a problem of significant current interest.1 -- 8 In
particular, resonant (or near resonant) interactions be-
tween environmental degrees of freedom and those inher-
ent to the system are thought to play an important role
in numerous physical processes.9 -- 20 However, a compre-
hensive picture of such dynamics is only beginning to
emerge due to the complexity of the systems in ques-
tion. Here, by focusing on a proposed model for olfaction
as a vibrationally-activated molecular switch, we explore
the detailed effects of the environment on the dynam-
ics of electron transfer (ET) in an open quantum system,
aiming to gain physical insight into vibrationally-assisted
transport processes more generally.
In fact, obtaining a deeper understanding of olfac-
tion, the mechanism for which is still being actively
debated,21 -- 30 is an important problem in its own right
for both fundamental science and industry.31 -- 35 The pre-
vailing theory, known as the lock-and-key model, ex-
plains how the odorant size and shape can provide
discrimination in the receptor.36 However, this theory
does not give a straightforward explanation of why it
a)These authors contributed equally to the work.
may be possible to distinguish the scents of some very
similar odorants, for example between those that are
deuterated and non-deuterated.26,30,37 It was suggested
as early as 1938 that the sensing of vibrational spectra
of molecules38 -- 40 -- later proposed to occur via electron
transfer21,22 -- could play an important role in olfaction,
supplementing (rather than replacing) the existing lock-
and-key model. Recent work, focussing on constructing
and exploring model systems that capture the impor-
tant physical processes,24,27 has shown that this is indeed
a viable proposition. The suggested mechanism, which
harnesses vibrationally-assisted ET in a similar manner
to inelastic electron tunneling spectroscopy,41,42 can be
viewed as an example of a molecular switch, wherein
specific vibrations of an external molecule actuate the
receptor and lead to a pronounced electron flow. Detec-
tion via the frequency of vibrations could help to discern
two molecules that are otherwise very similar. However,
the need for clear discrimination of the difference in ET
dynamics in the presence and absence of the odorant im-
poses certain design principles on the molecular switch,
which may or may not lead to the employment of quan-
tum phenomena to optimise performance.
Previously, a receptor-odorant spin-boson model was
introduced to describe the vibrationally-assisted ET pro-
cess at the heart of the proposed mechanism.24,27 Us-
ing an analysis based on the semiclassical Marcus-Jortner
(MJ) formula for the ET rate,43 -- 47 it was shown that for
certain parameter values the rates for ET in the presence
5
1
0
2
b
e
F
1
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
3
8
4
6
.
3
0
4
1
:
v
i
X
r
a
and absence of the odorant can differ drastically. This
indicates how the ET process could help in molecular
recognition via sensing of vibrational spectra; sensitivity
of the switch to the presence or absence of the odorant
can be understood as a significant difference in typical
timescales, or more generally in the population dynam-
ics, for processes with or without the odorant coupled
to the receptor. Additionally, in Refs. 27 and 29 further
evidence supporting a vibrationally-assisted mechanism
was obtained from sophisticated quantum chemistry cal-
culations.
Inspired by the possibility of vibrational sensing in ol-
faction, we focus here on the physical model of a molecu-
lar switch tuned for frequency detection. We go beyond
the MJ approach to look at both frequency selectivity
and detailed dynamics in a variety of regimes in which
a semiclassical analysis breaks down. Starting from a
microscopic Hamiltonian describing the odorant (as an
oscillator), receptor (as a donor-acceptor two-level sys-
tem), and environment (as a collection of independent
oscillators), we derive a polaron-representation master
equation for the ET process.48 -- 58 From this we may ex-
tract the relevant ET rates, extending previous analyses
to a broader set of parameters and looking in more detail
at the assumptions required for the MJ rates to be valid;
in fact, these rates arise naturally from our master equa-
tion in the semiclassical limit where the temperature is
high compared to the energy scales of the environment.
In general, we find that the dynamics of donor-acceptor
(DA) populations predicted by our master equation can
differ considerably from that given by the simpler MJ
rates. The main reason for this discrepancy is the as-
sumption inherent to the MJ analysis of exponential ET
from donor to acceptor, which we find to be invalid for a
wide set of parameter values.
Our approach also has the crucial advantage of allow-
ing us to additionally incorporate the effects of dissipa-
tion on the odorant mode, since it is treated explicitly in
our formalism. We shall show that by introducing suf-
ficiently strong mode dissipation, it is possible to bring
the DA dynamics derived from our master equation into
a simpler exponential form. However, even within this
strongly dissipative regime, our master equation predic-
tions can still differ markedly from the semiclassical MJ
theory, depending upon the specific nature of the envi-
ronment experienced by the DA pair. In particular, we
show that while in the MJ case the receptor is very sensi-
tive to the presence or absence of the odorant, it is far less
so to the specific odorant vibrational frequency. We find,
however, that the frequency resolution can be enhanced
by considering environments which contain components
of similar or larger energy to that set by the ambient tem-
perature, i.e. by working outside the semiclassical limit.
More generally, we show that when considering odorant
mode dissipation, both the sensitivity of the switch to the
presence or absence of the odorant, and to the resonance
conditions between the odorant and the DA pair, can be
significantly amplified in comparison to the dissipation-
2
Figure 1. Relevant DA-odorant energy levels. The three
most relevant single-electron joint DA-odorant states and the
principal transition rates between them. The rates ΓDnAm
and ΓAnDm are derived in Sec. IV, whilst odorant dissipation
with rate γ0 is discussed in Sec. V. The notation X, n(cid:105) refers
to the joint state of the DA pair, X ∈ {D, A}, and the odorant
in Fock state n(cid:105).
less case. We thus find that odorant dissipation plays
a constructive role in enhancing the vibrational sensing
capabilities of our molecular switch.
This paper is structured as follows. We begin in Sec-
tion II by describing the molecular switch model and giv-
ing an estimate of the parameters relevant to our analy-
sis. In Section III we briefly outline the derivation of our
polaron-representation master equation, with further de-
tails given in the Appendix. Sections IV A and B are
devoted to showing how the MJ rates naturally emerge
in the semiclassical limit of our master equation, in the
absence and presence of the odorant, respectively. Sec-
tion IV C contrasts the full master equation dynamics
with a simpler rate analysis in the illustrative case of a
dissipationless odorant mode, while Section V considers
the impact of odorant dissipation upon the ET dynamics
and the resulting switch frequency resolution. Finally,
we summarise our findings in Section VI.
II. MODEL OF OLFACTION
Few details are presently known about olfactory recep-
tors and their properties.32,33,59 Here, following earlier
work,24,27,29 we study a simplified model which captures
the essential physics of the electron transfer process. We
assume that there exist specific electronic states of the re-
ceptor that can be identified as a DA pair, with other lev-
els well separated in energy. We model the vibrationally-
assisted ET process using a spin-boson Hamiltonian. The
DA pair is coupled to an environment represented by a
bath of harmonic oscillators (which includes the vibra-
tional degrees of freedom of the receptor) and to the
odorant (when present in the receptor). The odorant
is modelled as a single mode harmonic oscillator, though
this could also be extended to a set of modes. Our Hamil-
tonian thus takes the form
H = DD(cid:105)(cid:104)D + AA(cid:105)(cid:104)A + V(cid:0)A(cid:105)(cid:104)D + D(cid:105)(cid:104)A(cid:1)
(cid:88)
(cid:2)ωkb
+ ω0a†a + (γDD(cid:105)(cid:104)D + γAA(cid:105)(cid:104)A)(a† + a)
†
kbk + (γkDD(cid:105)(cid:104)D + γkAA(cid:105)(cid:104)A)(b
+
k + bk)(cid:3).
†
k
(1)
Here, X(cid:105), with X = D, A, represents the donor (D) and
acceptor (A) electronic state with on-site energy X, and
V refers to the tunnel coupling. The odorant molecu-
lar mode, with creation (annihilation) operator a† (a),
has frequency ω0 and is coupled to the DA pair via γX.
The environmental oscillators, with creation (annihila-
†
tion) operators b
k (bk) for modes of frequency ωk, couple
to the receptor electronic sites via γkX. We shall con-
sider odorant dissipation in Section V below. Transfer
of an electron gives rise to changes in the local electric
field and justifies the present form of interaction between
the oscillators and the DA pair.1,24,27,29 Fig. 1 shows the
most relevant energy levels of the joint system along with
transition rates between them (to be derived in later sec-
tions). Specific parameter values for the model will be
discussed below.
In Refs. 24 and 27, MJ formulas were employed to de-
fine two types of ET rate: elastic, in the absence of the
odorant, and inelastic, in which the odorant is present.
These rates were calculated using Fermi's golden rule,
wherein the tunnelling term V is treated as a perturba-
tion. This naturally gives rise to a representation of the
receptor-odorant-environment basis in terms of displaced
oscillator states -- as can be seen from Eq. (1) by setting
V = 0 -- between which it is assumed that incoherent ET
occurs. This is, in fact, a reflection of the polaron picture
that we shall discuss in the next section. In Ref. 24, typi-
cal ET timescales were estimated to be ∼ 100 ns (elastic)
versus ∼ 1 ns (inelastic), predicting the inelastic process
to be much faster than the elastic one, as required for
discriminating between the presence and the absence of
the odorant. Ref. 27 also discusses a wider range of pa-
rameters in which a separation of timescales between the
elastic and inelastic processes can be obtained.
Here, rather than following a Fermi golden rule calcula-
tion, we shall look instead at receptor ET dynamics and
issues such as odorant vibrational frequency resolution
from the perspective of the master equation formalism.
This includes the MJ rate analysis as a limiting case, but
can also go well beyond the restricted regime of validity
of such an approach.
A. Estimated parameters
3
Parameter
D − A
ω0
(γD − γA)2/ω2
0
T
Value
Parameter
200 meV
100 − 300 meV
0.01
300 K
V
λ
ωc
kBT
Value
1 meV
10 − 60 meV
10 , kBT , 2kBT
kB T
25.85 meV
Table I. Table of parameter values used in this article.
shall, however, explore an effective window of frequen-
cies away from resonance to study the issue of molecu-
lar frequency recognition, i.e. we would like to explore
whether the switch is sensitive merely to the presence or
absence of the odorant, or to its particular vibrational
frequency as well. Typical values for ω0 are in the range
of 70 − 400 meV, and we choose D − A = 200 meV for
the DA energy gap. The DA tunnel coupling is estimated
to be on the order of V ∼ 1 meV.24 Increasing V acts to
enhance the ET rate in the absence of the odorant in the
receptor, which is disadvantageous as far as the switching
mechanism is concerned. Keeping V small in comparison
to other system parameters is therefore well motivated
physically. Estimates of the coupling between the DA
pair and the odorant mode, and of the reorganization
energy of the multi-mode environment, have been given
as (γD − γA)2/ω2
0 ∼ 0.01 and λ ∼ 30 meV, respectively.
Here, we shall explore variations in the DA-environment
coupling strength through the reorganisation energy, fo-
cussing on the range λ ∼ 10 − 60 meV. Previously, the
detailed properties of the environment, such as the spec-
tral density,
(cid:88)
J(ω) =
(γkD − γkA)2δ(ω − ωk),
(2)
k
were not discussed, as they do not enter the semiclassi-
cal MJ rates. They are, however, important for our more
general analysis. We choose to work with an Ohmic envi-
ronment, J(ω) ∝ ω as ω → 0, with a characteristic high
frequency cut-off ωc, since in the absence of more detailed
information, it straightforwardly reproduces the results
of Refs. 24 and 27 in the semiclassical limit (βωc (cid:28) 1,
where β = 1/kBT is the inverse temperature). We take
the cut-off to be exponential, leading to the following
spectral density defined also in terms of the reorganisa-
tion energy:
J(ω) = λ
e−ω/ωc.
ω
ωc
(3)
For consistency with the published literature, we fol-
low the estimation of parameters presented in Refs. 24
and 27.
In common with previous studies, we assume
that the energy gap D − A is relatively close to res-
onance with the odorant vibrational frequency ω0. We
We shall vary the ratio ωc/kBT from low to high in order
to explore the effect of widening the range of frequencies
within the environment that can interact with the recep-
tor DA pair. We assume that T = 300 K throughout,
and summarise the model parameters in Table I.
III. POLARON MASTER EQUATION
As noted, for our system to act as an effective molecu-
lar switch, the Hamiltonian parameters should be such
that unwanted transitions from donor to acceptor are
avoided when the odorant is absent. This requires the
tunnel coupling V to be small compared to other energy
scales in the problem.
In this regime, it is convenient
to move into a polaron transformed reference frame to
remove the linear coupling terms in Eq. (1). Provided
V is indeed small, then perturbative expansions in the
transformed basis are valid over a much wider range of
system-environment coupling strengths than those in the
untransformed case.48 -- 58 Let us consider the (unitary)
polaron transformation U = e−(SA+SB) acting on our
Hamiltonian, where
SA =(cid:0)uDD(cid:105)(cid:104)D + uAA(cid:105)(cid:104)A(cid:1)(a† − a),
(cid:88)
(cid:0)αkDD(cid:105)(cid:104)D + αkAA(cid:105)(cid:104)A(cid:1)(b
†
k − bk),
(4)
(5)
SB =
and
k
with uX = γX /ω0 and αkX = γkX /ωk. The polaron
transformed Hamiltonian takes the form HP = U†HU =
HSP + HB + HIP, where
HSP = (cid:48)
AA(cid:105)(cid:104)A + ω0a†a,
DD(cid:105)(cid:104)D + (cid:48)
(cid:88)
HB =
k
†
ωkb
kbk,
and
HIP = V(cid:0)D(cid:105)(cid:104)AA+B+ + A(cid:105)(cid:104)DA−B−(cid:1).
(6)
(7)
(8)
k ωkα2
X = X − ω0u2
Here, (cid:48)
kX is the polaron-
shifted on-site energy, and A± = D(±(uD − uA)) and
B± = ΠkDk(±(αkD − αkA)) are the new oscillator in-
teraction operators, written in terms of the displacement
operators D(u) = eua†−u∗a and Dk(αk) = eαkb
kbk, re-
spectively. Note that the polaron transformation leaves
the operators D(cid:105)(cid:104)D and A(cid:105)(cid:104)A, required for calculating
DA populations, unchanged.
†
k−α∗
(cid:90) ∞
Tracing out the environment and treating the pertur-
bative term HIP up to second order in the standard Born-
Markov approximations,7 we obtain a master equation
in the polaron frame interaction picture (with respect to
HSP + HB), given by
ρSP(t) = −V 2
(cid:8)(cid:0)[A(cid:105)(cid:104)DA−(t),D(cid:105)(cid:104)AA+(t − τ )ρSP(t)]e−iτ
+ [D(cid:105)(cid:104)AA+(t),A(cid:105)(cid:104)DA−(t − τ )ρSP(t)]eiτ(cid:1)C(τ )
+ H.c.(cid:9),
(9)
dτ
0
see the Appendix for further details. Here, ρSP(t) =
trB{ χP(t)} is the reduced density operator describing the
X −(cid:80)
4
DA pair and odorant mode on tracing out the receptor
environment, with χP(t) the total density operator in the
polaron frame interaction picture. The bath correlation
function, defined as C(τ ) = trB (B±(τ )B∓(0)ρB) with
B±(t) = eiHB tBe−iHB t, takes the form of an exponential
of the lineshape function:
−(cid:82) ∞
D − (cid:48)
C(τ ) = e
with = (cid:48)
0 dω J(ω)
ω2 [(1−cos ωτ ) coth(βω/2)+i sin ωτ ],
(10)
A now the DA energy gap.
IV. ELECTRON TRANSFER DYNAMICS
Having derived our polaron master equation, we shall
use it below, in Section C, to investigate the receptor
ET dynamics beyond the MJ rate analysis employed in
earlier work. First, however, we show how the MJ rates
arise from our master equation in the semiclassical limit,
for both elastic and inelastic processes, and thus how
our theory is consistent with previous treatments in this
regime.
In addition, we discuss other important tran-
sition rates which we shall subsequently show are sup-
pressed only with the introduction of strong dissipation
acting on the odorant mode.
A. Odorant absent
Let us consider the population transfer from donor to
acceptor for the case in which the odorant is absent,
meaning that A±(t) = 11 in Eq. (9). We can then eas-
ily derive rate equations governing the donor (pD(t)) and
acceptor (pA(t)) population dynamics. Our interest lies
in the rates that appear in these equations
Γ(±) =
dτ e±iτ C(τ ),
(11)
(cid:90) ∞
−∞
where, by defining ΓDA = V 2Γ() and ΓAD = V 2Γ(−),
we obtain
pD(t) = −ΓDApD(t) + ΓADpA(t),
pA(t) = −ΓADpA(t) + ΓDApD(t).
In the limit that ΓDA (cid:29) ΓAD, these equations define
exponential transfer of population from donor to acceptor
at (approximately) the rate ΓDA, which we write as
(13)
For a low-frequency environment in which βωc (cid:28) 1, we
may derive a simple form for ΓDA which turns out to be
dτ eiτ e−ϕ(τ ),
(cid:90) ∞
(cid:2)(1 − cos ωτ ) coth(βω/2) + i sin ωτ(cid:3).
(12)
−∞
ΓDA = V 2
(cid:90) ∞
where
ϕ(τ ) =
dω
0
J(ω)
ω2
5
the same as the MJ rate. Taking the spectral density
defined in Eq. (3) and expanding coth(βω/2) ≈ 2/βω in
Eq. (13), we find
(cid:2)ωc(iβ + 2τ ) tan−1(ωcτ ) − ln(1 + ω2
c τ 2)(cid:3) .
ϕ(τ ) ≈ λ
βω2
c
(14)
In the regime in which we are presently interested, e−ϕ(τ )
is strongly peaked around τ = 0, such that we may ex-
pand ϕ(τ ) to second order in τ to give
ϕ(τ ) ≈ iλτ +
λτ 2
β
.
(15)
With these assumptions we can write
(cid:90) ∞
may or may not act to enhance the rate associated with
the process.
We return to the master equation [Eq. (9)] to de-
rive an expression for the dynamics of the population
of the acceptor and a given Fock state n(cid:105) of the odorant,
ρAnAn = trS+O(A, n(cid:105)(cid:104)n, AρSP(t)) = (cid:104)n, AρSP(t)A, n(cid:105),
where the trace is taken over both the odorant (O)
(cid:80)
and the DA pair (S) degrees of
freedom. Decom-
posing the DA-odorant density operator as ρSP(t) =
X,X(cid:48),l,m ρXlX(cid:48)m(t)X, l(cid:105)(cid:104)X(cid:48), m, where X, X(cid:48) ∈ {D, A}
and l, m are odorant Fock states, allows us to identify
the different contributions to the change in population of
the state A, n(cid:105). In particular, if we assume that the only
donor-odorant state of interest is one with no odorant ex-
citations, D, 0(cid:105) -- valid when we initialise the system in
this state and energy splittings are large enough to sup-
press transitions to any other donor-odorant states -- we
may then define a rate of transfer D, 0(cid:105) → A, n(cid:105) as
ΓDA ≈ V 2
dτ ei(−λ)τ e−λτ 2/β
−∞
1√
4πkBT λ
exp
− ( − λ)2
4kBT λ
= 2πV 2
(cid:20)
(cid:21)
,
which agrees with the elastic rate (odorant absent) pre-
sented in Ref. 24 when αkD = −αkA is assumed, and as
a consequence → D − A. We apply this constraint on
αkX throughout the paper, although little modification
would be required to account for the more general case.
Choosing λ = 30 meV, and other parameters as out-
lined in Table I, we obtain ΓDA = 5.67× 10−6 meV from
Eq. (16), which corresponds to τDA = 1/ΓDA = 116 ns
as the DA transfer time in the absence of the odorant.
Of course, the limit βωc (cid:28) 1 used to derive Eq. (16)
may not always be met, in which case we can use the more
general form of Eq. (12) to define the DA elastic transfer
rate.
Importantly, this allows us to discuss lower tem-
peratures and larger environmental cut-offs than those
to which the MJ rates apply.
B. Odorant present
A similar rate can also be derived when the odorant
is present in the receptor.
In this situation, we must
deal with a more complex system, as the reduced density
operator (after tracing out the environmental degrees of
freedom) now encompasses both the two-level DA pair
and the odorant harmonic oscillator. Obtaining general
equations of motion for the DA populations becomes sig-
nificantly more involved. However, this is unnecessary
if we instead look at ET rates between specific states of
the combined DA-odorant system. Let us assume that we
initialize the system in the state D, 0(cid:105) (electron on the
donor, odorant in its ground-state 0(cid:105)) and we are inter-
ested in the rate of ET to a state of the form A, n(cid:105), where
n(cid:105) is an arbitrary Fock (number) state of the odorant.
We are thus considering situations in which the receptor
population transfer D(cid:105) → A(cid:105) is accompanied by exci-
tation of the odorant vibrational mode 0(cid:105) → n(cid:105), which
(cid:18)
(cid:90) ∞
0
(16)
ΓD0An =
eiτ C(τ )(cid:104)nA−(t − τ )0(cid:105)(cid:104)0A+(t)n(cid:105)
dτ
(cid:19)
+ e−iτ C∗(τ )(cid:104)nA−(t)0(cid:105)(cid:104)0A+(t − τ )n(cid:105)
V 2.
(17)
√
Using (cid:104)nD(α)0(cid:105) = (αn/
n!)e−α2/2, it is straightfor-
ward to calculate the expectation values of A±(t). We
then arrive at
V 2(uD − uA)2ne−uD−uA2
ΓD0An =
n!
dτ ei(−nω0)τ e−ϕ(τ ),
(18)
(cid:90) ∞
−∞
×
which generalises Eq. (12) in the presence of the odorant
(ΓDA = ΓD0A0). At this point we can again take the
limit βωc (cid:28) 1, and follow the same steps that led us
from Eq. (12) to Eq. (16) to find
ΓD0An ≈ 2πV 2 (uD − uA)2ne−uD−uA2
(cid:21)
4πkBT λ
(cid:20)
√
− ( − nω0 − λ)2
× exp
n!
.
4kBT λ
(19)
Once again, this result for the inelastic ET rates (n > 0)
agrees with the MJ form found in Ref. 24 when we assume
uD = −uA and αkD = −αkA, such that → D−A. Us-
ing the values in Table I, choosing λ = 30 meV and ω0 =
D − A, we obtain ΓD0A1 = 4.71× 10−4 meV, which cor-
responds to a transfer time of τD0A1 = 1/ΓD0A1 = 1.4 ns.
This is far shorter than the 116 ns transfer time found
above in the absence of the odorant, as required for a vi-
able molecular switch. Additionally, if we take the same
parameter values and look at the rate for the two-phonon
transition we then find ΓD0A2 = 1.24 × 10−13 meV, and
a corresponding time τD0A2 = 5.3 s, confirming that the
single-phonon process is dominant within this treatment.
As before, in situations in which the limit βωc (cid:28) 1 does
not apply, we may instead use Eq. (18) to define the in-
elastic rates, again generalising the MJ rates to a wider
range of parameters.
Of course, our master equation also allows us to calcu-
late the reverse rates ΓAnD0 (as well as other rates such
as ΓDnDm and ΓAnAm, which do not play a major role).
Following a derivation similar to that leading to Eq. (18),
we find
V 2(uD − uA)2ne−uD−uA2
ΓAnD0 =
(cid:90) ∞
×
n!
dτ ei(−nω0)τ e−ϕ(−τ ),
(20)
−∞
and, in the limit βωc (cid:28) 1,
ΓAnD0 ≈ 2πV 2 (uD − uA)2ne−uD−uA2
(cid:21)
√
n!
(cid:20)
4πkBT λ
− ( − nω0 + λ)2
4kBT λ
× exp
.
(21)
Notably, the single-phonon reverse transfer rate, ΓA1D0,
is equal to the donor-to-acceptor rate, ΓD0A1, when the
odorant is resonant with the receptor (ω0 = D − A).
We shall see below that this has important implications
for the dynamics of the DA pair over a wide range of
parameters, often invalidating the treatment of inelastic
ET as being a one-way process.
C. Master equation dynamics versus ET rates
We are now in a position to compare our full polaron
master equation [Eq. (9)] with a model in which the donor
population simply decays with the ET rates calculated
in the previous section. Specifically, we would like to
know how reliably we can apply a rate analysis, such as
the MJ evaluation employed in previous studies,24,27 to
parameter regimes estimated to be relevant to the olfac-
tory process. We have already seen that with the odor-
ant present, the possibility of transfer from acceptor to
donor cannot be neglected when close to resonance. This
is especially true when the inelastic process dominates,
as the reverse rate in the elastic case is suppressed by
a factor ∼ exp [−(D − A)λ/kBT ]. Without further as-
sumptions, we thus expect exponential decay from donor
to acceptor to hold only when the ET is mediated pri-
marily by the environment (n = 0), rather than by the
odorant itself.
This intuition is borne out in Fig. 2, which shows a
comparison between the DA population dynamics (in
the presence of the odorant) calculated from our master
equation (9), and predicted by the ET rates of Eq. (18).
The receptor is taken to be initialised in the donor state,
with the odorant mode and the environment in thermal
states, of HO = ω0a†a and of HB, respectively.60 As
can clearly be seen, the ET dynamics can differ consid-
erably between the two methods. As expected, the best
6
agreement is found for large reorganisation energies (right
column), where elastic transfer due to the environment
dominates over inelastic transfer via the odorant. On
the other hand, when the odorant does play a significant
role in mediating the ET, then the agreement is generally
poor, with our master equation predicting DA dynamics
that cannot be fitted by a single exponential form.61 This
is particular true in the low-frequency environment limit
(ωc (cid:28) kBT ) shown in panels (i) and (ii), to which the
MJ rates would usually be assumed to apply.62 These
discrepancies suggest, in fact, that it is the combination
of population accumulation within the odorant and the
inherent competition between forward and backward pro-
cesses that limits the timescale for complete transfer from
donor to acceptor in the master equation.
We can thus gain further insight by looking at the pop-
ulation dynamics of the odorant mode.
In Fig. 3 we
plot the evolution of the lowest two odorant states as
predicted by our master equation, for the same param-
eter sets as in Fig. 2. Note that other levels are never
significantly populated, since the total initial energy is
insufficient to further excite the mode. In the cases in
which the odorant-assisted (inelastic) rate dominates, ex-
citation is quickly transferred from the DA pair to the
odorant. The electron is then equally likely to be found
on the acceptor (having deposited energy to the odor-
ant mode) as it is on the donor. Due to the equality of
the forward and backward rates on resonance, the only
way energy can now exit the system, to allow full ET
to the acceptor, is into the environment, the timescale
for which is dependent upon the reorganisation energy
and cut-off frequency. Since the rate analysis that leads
to the dashed curves in Fig. 2 ignores the possibility of
reverse acceptor-to-donor transfer, it consequently over-
estimates the inelastic transfer rate. It is worth noting
that even for the cases in which the master equation dy-
namics shown in Fig. 2 appears to reach a (quasi) steady
state with the donor and acceptor similarly populated, in
fact full ET from donor to acceptor does still eventually
occur, albeit on a very long timescale.
Of course, in any realistic physical setting, the odor-
ant mode would not be isolated from the environment.
In MJ theory, for the semiclassical limit to be valid in the
presence of the odorant an implicit assumption is made
that the odorant vibrational mode dissipates its energy to
the environment on a timescale much shorter than that
of the ET process. However, within our master equation
approach we can explicitly include mode dissipation, and
indeed explore the effects of varying the associated rate.
Thus, by contrasting the dynamics illustrated here in the
absence of odorant dissipation with that in its presence
in the next section, we can investigate the detailed role
such dissipation plays in vibrationally-assisted ET. We
shall show that for strong dissipation we can recover ex-
ponential inelastic ET, though generally at a rate that
differs from the semiclassical MJ formula. Furthermore,
we shall demonstrate that reducing the level of odorant
dissipation can in fact act to limit the frequency detection
7
odorant states to ensure numerical convergence) and by the total donor-to-acceptor ET rate(cid:80)3
Figure 2. Donor and acceptor population dynamics. Comparison of the donor, pD(t) (black, pD(0) = 1), and acceptor,
pA(t) (red, pA(0) = 0), population dynamics as predicted by the polaron master equation (9) (solid lines, calculated using 3
n=0 ΓD0An from Eq. (18) (dashed
lines). The reorganisation energy λ increases from left to right: λ = 15 meV in the left column, λ = 30 meV in the middle
column and λ = 60 meV in the right column. The bath cut-off frequency ωc increases from top to bottom, with ωc = kBT /10
for panels (i - iii), ωc = kBT for panels (iv - vi) and ωc = 2kBT for panels (vii - ix). The odorant frequency is chosen to be
resonant with the DA pair, i.e. ω0 = D − A = 200 meV, and other parameters are as listed in Table I. Note that for each set
AA(cid:105)(cid:104)A in the
of parameters, the populations eventually tend to a thermal distribution with respect to HDA = (cid:48)
steady state; this is true even for panels (i) and (ii), which equilibrate on a very long time scale.
DD(cid:105)(cid:104)D + (cid:48)
properties of the receptor, suggesting that strong dissi-
pation may actually be beneficial for obtaining frequency
selective switching processes.
V. DISSIPATION ASSISTED ELECTRON TRANSFER
Given that, when present, the odorant is considered to
be in the vicinity of the DA pair, it is reasonable to as-
sume that it too interacts with the surrounding environ-
ment. Taking a linear coupling form we can model the
effects of the resulting mode dissipation in a straight-
forward manner, once Born-Markov and rotating wave
approximations are made, by introducing an additional
Lindblad term to the right-hand-side of our master equa-
tion (9):7
Ldiss[ρSP] = − γ0
2
− γ0
2
(cid:0)aa† ρSP − 2a† ρSPa + ρSPaa†(cid:1)
(N0 + 1)(cid:0)a†aρSP − 2aρSPa† + ρSPa†a(cid:1).
N0
(22)
dotted curves), for moderate dissipation (γ0 ∼ ΓD0A1,
dashed curves) and for strong dissipation (γ0 (cid:29) ΓD0A1,
solid curves). In the limit of large dissipation, we see that
the behaviour of the DA populations is consistent with
that given by the transfer rates of Eq. (18), and the de-
scription of the dynamics as an exponential ET process
from donor to acceptor once again becomes valid (note
the agreement between the points and solid curves). Fur-
thermore, the dynamics only agrees with that predicted
by MJ theory (blue squares) in the limit of low cut-off
frequency in the bath (top panel). Importantly, we can
also see that adding mode dissipation actually assists the
transfer of population from donor to acceptor. In fact,
the timescale for complete ET is substantially reduced as
the dissipation rate is increased, thus ensuring a greater
variance between the transfer time in the presence and
absence of the odorant. In this manner, mode dissipa-
tion is seen to be beneficial for the molecular switching
process, allowing easier discrimination in the receptor be-
tween the cases with and without the odorant present.
Here, γ0 is the odorant dissipation rate and N0 =
(eω0/kB T − 1)−1 is the phonon occupation number.
In Fig. 4 we investigate the effect of adding dissipa-
tion to the odorant. Specifically, we show a comparison
of the dynamics in the absence of dissipation (γ0 = 0,
A. Frequency resolution at strong dissipation
We can think of the olfactory model outlined herein
in terms of a vibrational spectrometer, and one of the
principle figures of merit for any spectroscopic device is
DonorAcceptorpopulation02460.0.20.40.60.81.i02460.0.20.40.60.81.ii02460.0.20.40.60.81.iii02460.0.20.40.60.81.iv02460.0.20.40.60.81.v02460.0.20.40.60.81.vi02460.0.20.40.60.81.vii02460.0.20.40.60.81.viii02460.0.20.40.60.81.ix02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.02460.0.20.40.60.81.Timens 8
Figure 3. Odorant dynamics. Populations of the odorant ground state, p0(cid:105)(cid:104)0(t) (black, p0(cid:105)(cid:104)0(0) = 1), and first excited state,
p1(cid:105)(cid:104)1(t) (red, p1(cid:105)(cid:104)1(0) = 0), calculated from Eq. (9). The reorganisation energy λ increases from left to right: λ = 15 meV
in the left column, λ = 30meV in the middle column and λ = 60 meV in the right column. The bath cut-off frequency ωc
increases from top to bottom, with ωc = kBT /10 for panels (i - iii), ωc = kBT for panels (iv - vi) and ωc = 2kBT for panels
(vii - ix). The odorant frequency is ω0 = D − A = 200 meV. Populations of higher Fock states are negligible at all times.
its frequency resolution. The more sensitive the individ-
ual receptors are to resonance conditions between the DA
pair and odorant, the better they will be able to distin-
guish the vibrational spectra of different molecules. To
explore this aspect in our model, in Fig. 5 we map out
the ratio r = (Γtot − Γ0)/(Γtot + Γ0) of tunneling rates as
a function of odorant frequency ω0 and bath reorganisa-
tion energy λ. Here, the definition of Γtot as the tunneling
rate in the presence of the odorant and Γ0 as the rate in
its absence is made possible by the strong mode dissipa-
tion, γ0 = 1000 ns−1, which ensures exponential ET from
donor to acceptor as just demonstrated. The top panel
corresponds to the regime in which ωc (cid:28) kBT , therefore
representing the behaviour predicted by the MJ rates of
Eqs. (16) and (19), while the other panels encompass pa-
rameter ranges outside the MJ limit.
We see that in each plot there clearly exists a frequency
window for which the tunneling rate is enhanced in the
presence of the odorant above the background. Further-
more, this window becomes narrower as the environmen-
tal cut-off frequency is increased (middle and bottom
panels), suggesting that the structure of the environment
can play an important role in tuning the selectivity, and
hence frequency resolution, of the receptor DA pair. Cru-
cially, this cannot be predicted by the semiclassical MJ
rates, which do not depend on the environmental cut-
off, and predict a significant enhancement of tunnelling
even for odorant vibrational frequencies relatively far off-
resonant with the DA energy gap of 200 meV (top panel).
The low-frequency environment regime analysed in pre-
vious works -- to which we have shown the MJ rates to
apply under strong mode dissipation -- is thus very sensi-
tive the presence or absence of the odorant, but not nec-
essarily to the odorant's specific vibrational spectrum.
It is evident from Fig. 5, however, that increased fre-
quency resolution comes at a cost. In order to achieve
the more selective behaviour apparent with a larger en-
vironmental cut-off (and strong odorant dissipation), the
coupling to the continuum environment must be reduced.
Furthermore, the switch suffers from intrinsically higher
levels of noise, since the peak values of the ratio r also be-
come smaller as the cut-off is increased. We can therefore
conclude from our analysis that a tradeoff exists in which
the combination of moderate to high frequency compo-
nents in the environment and a lower reorganisation en-
ergy is advantageous for odorant vibrational frequency
resolution, though not necessarily for discrimination sim-
ply between the presence and the absence of the odorant.
It is worth noting also that the validity of the results de-
rived from our polaron transformed Hamiltonian rely on
the assumption λ (cid:29) V . It is not possible, therefore, to
extrapolate Fig. 5 to yet lower reorganisation energies
within the present analysis.
Finally, we stress that if we move out of the regime
of strong odorant dissipation, we find that both the fre-
quency resolution of the receptor and its sensitivity to
the presence or absence of the odorant decreases. This is
illustrated in Fig. 6, which shows the ratio of the trans-
fer time (to 90% population on the acceptor site) in the
absence of the odorant to that in its presence for dif-
Odorant0,1population02460.0.20.40.60.81.i02460.0.20.40.60.81.ii02460.0.20.40.60.81.iii02460.0.20.40.60.81.iv02460.0.20.40.60.81.v02460.0.20.40.60.81.vi02460.0.20.40.60.81.vii02460.0.20.40.60.81.viii02460.0.20.40.60.81.ixTimens 9
Figure 4. Effect of odorant mode dissipation. DA
population difference pD(t) − pA(t) as predicted by Eqs. (9)
and (22) for different odorant dissipation rates: γ0 = 0 (red
dotted curves), γ0 = 1 ns−1 (red dashed curves), and γ0 =
1000 ns−1 (red solid curves). Exponential ET dynamics gov-
erned by the rates given in Eq. (18), without mode dissipation,
are also shown (points) along with the dynamics predicted by
MJ theory (blue squares) for comparison. The bath cut-off
frequency ωc increases from top to bottom, with ωc = kBT /10
in panel (i), ωc = kBT in panel (ii) and ωc = 2kBT in panel
(iii). The reorganisation energy is λ = 15 meV in each case
and the odorant frequency is taken to be on resonance with
the DA splitting, ω0 = D − A = 200 meV.
ferent levels of odorant dissipation. We use the transfer
time to allow a meaningful comparison here, since there
is no single rate that accurately describes the dynamics
outside the strongly dissipative case. As the dissipation
rate is decreased, the height of the peak also decreases,
while its width remains similar (dotted curve) until the
dissipation ceases to play a role (dashed curve). Thus, as
the mode dissipation is weakened, the receptor frequency
resolution is severely compromised, as well as its capa-
bility to distinguish between the cases with and without
Figure 5. Switch frequency resolution. Contour plots of
r = (Γtot−Γ0)
(Γtot+Γ0) as a function of odorant frequency ω0 and bath
reorganisation energy λ. Top: ωc = kBT /10 (corresponding
to the MJ limit). Middle: ωc = kBT . Bottom: ωc = 2kBT .
Other parameters are given in Table I. Light regions corre-
spond to r → 1 (good odorant discrimination) and the dark-
est regions correspond to r → 0 (poor discrimination). The
red dashed lines shows the DA energy splitting.
the odorant present.
VI. SUMMARY
We have developed a dynamical theory of a molecular
switch and applied it to investigate vibrationally-assisted
ET in the context of a proposed olfactory process. We
have shown that the dynamics of the olfactory receptor
pD(t)-pA(t)■■■■■■■■■■■■●●●●●●●●●●●●0246-0.2-0.4-0.6-0.8-1.0.0.20.40.60.81.(i)■■■■■■■■■■■■●●●●●●●●●●●●0246-0.2-0.4-0.6-0.8-1.0.0.20.40.60.81.(ii)■■■■■■■■■■■■●●●●●●●●●●●●0246-0.2-0.4-0.6-0.8-1.0.0.20.40.60.81.(iii)Time(ns) 10
VII. ACKNOWLEDGEMENTS
A. C. would like to thank V. Vedral for fruitful discus-
sions. A. N. is supported by Imperial College London and
The University of Manchester. F. A. P. is supported by
the Leverhulme Trust. A. C. was supported by the Na-
tional Research Foundation and Ministry of Education,
Singapore.
APPENDIX: DERIVATION OF THE MASTER EQUATION
In this Appendix we outline the general steps required
to derive our polaron master equation. We start the anal-
ysis by writing the polaron-transformed Hamiltonian as
(see Sec. III)
HP = U†HU = HSP + HB + HIP,
(23)
and moving into the interaction picture with respect to
HSP and HB. To derive the master equation we focus on
the interaction part of the Hamiltonian which takes the
form
HIP(t) =V(cid:0)D(cid:105)(cid:104)A(t)A+(t)B+(t)
+ A(cid:105)(cid:104)D(t)A−(t)B−(t)(cid:1)
(cid:88)
Sj(t)Bj(t),
=
j
with j = {+,−} and
S+(t) = V D(cid:105)(cid:104)AeitA+(t),
S−(t) = V A(cid:105)(cid:104)De−itA−(t).
(24)
(25)
By considering the Liouville-von Neumann equation of
motion for the density matrix of the whole system in the
interaction picture, χP(t), and tracing over the environ-
ment, we find:
(cid:90) t
(cid:110)(cid:104) HIP(t),
(cid:104) HIP(s), χP(s)
(cid:105)(cid:105)(cid:111)
.
ρSP(t) = −i
d
dt
dstrB
0
(26)
Here, we have substituted in the solution to the full
Liouville-von Neumann equation on the right-hand-side
and have used tr{[ HIP(t), χP(0)]} = 0. We then make
the standard Born-Markov approximations. We assume
that the evolution of the system is time local, such that it
depends only on its current state, and that in the trans-
formed frame the effective interaction 'strength' is small,
so that we may write χP(t) (cid:39) ρSP(t) ⊗ ρB at all times,
where ρB is a thermal state of the environment. The
Markov approximation amounts to replacing the state at
time s in the integrand of Eq. (26) with the state at time
t, changing variables such that s → t− τ, and taking the
0 ) to that in its presence (t90
Figure 6. Dissipation-assisted electron transfer. The ra-
tio of the electron transfer time (to 90% acceptor population)
in the absence of the odorant (t90
tot)
as a function of odorant frequency, as predicted by Eqs. (9)
and (22). We take λ = 10 meV, ωc = kBT , and all other
parameters are from Table I. The three curves correspond to
different levels of dissipation on the odorant: γ0 = 0 (red,
dashed), γ0 = 1 ns−1 (blue, dotted) and γ0 = 1000 ns−1
(grey, solid). The blue points correspond to the same ratio
calculated using Eq. (18), considering n = 0, 1.
can differ dramatically from that predicted by semiclas-
sical MJ theory, even for a low-frequency environment,
if vibrational dissipation is weak. The ET dynamics
can, however, be brought into agreement with a simpler
rate analysis -- though not generally the MJ rates unless
the semiclassical limit also applies -- provided that strong
dissipation is allowed to act on the odorant vibrational
mode. This results in an enhanced switching with respect
to the dissipationless case. Furthermore, we have found
that low frequency environments, to which the MJ rates
apply under strong odorant dissipation, do not provide
good odorant frequency resolution in the ET rates. By
modifying environmental parameters to move beyond the
semiclassical limit it is, nevertheless, possible to substan-
tially increase this resolution and thus select for odorants
of a particular frequency.
While our present model is motivated by the problem
of describing olfaction in biological systems, it actually
corresponds to a wide variety of physical settings in which
vibrationally-assisted transport processes are important.
Examples include nano-mechanical oscillators coupled to
two-level systems,63 such as quantum dots64 and super-
conducting qubits,65,66 as well as other biological systems
such as the photosynthetic reaction centre in certain or-
ganisms.67,68 Our results may also be especially relevant
for the development of artificial molecular sensors, which
could use the principles we have described in their design
to aid in distinguishing chemical species based on their
vibrational spectra.34,69,70
(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)(cid:230)100150200250300010203040506070Ω0meVt090ttot90 (cid:104) HIP(t − τ ), ρSP(t)ρB
(cid:105)(cid:105)(cid:111)
.
(27)
0
dτ
(cid:90) ∞
(cid:110)(cid:104) HIP(t),
(cid:90) ∞
dτ
integral to infinity:
ρSP(t) = − i
d
dt
× trB
ρSP(t) = −(cid:88)
(cid:18)
d
dt
In terms of the operators S±(t) this now reads
0
j,j(cid:48)
[Sj(t), Sj(cid:48)(t − τ )ρSP(t)]Cjj(cid:48)(τ )
×
+ [ρSP(t)Sj(cid:48)(t − τ ), Sj(t)]Cj(cid:48)j(−τ )
(cid:19)
,
(28)
(29)
where
(cid:0)Bj(τ )Bj(cid:48)(0)ρB
(cid:1),
Cjj(cid:48)(t) = trB
and we have used [ρB, HB] = 0. There are actually two
types of correlation function, C±±(τ ) and C±∓(τ ), but
one of them vanishes (C±±(τ ) → 0) and the other sat-
isfies C±∓(−τ ) = [C±∓(τ )]∗. We therefore arrive at our
polaron master equation
dτ
(cid:90) ∞
(cid:26)(cid:0)[S+(t), S−(t − τ )ρSP(t)]+
+ [S−(t), S+(t − τ )ρSP(t)](cid:1)C(τ ) + H.c.
×
0
(cid:27)
,
ρSP(t) = −
d
dt
(30)
where we have written C(τ ) ≡ C±∓(τ ). This is equiva-
lent to Eq. (9) in the main text.
REFERENCES
1A. Nitzan, Chemical Dynamics in Condensed Phases: Relax-
ation, Transfer and Reactions in Condensed Molecular Systems
(Oxford University Press, 2006).
2V. May and O. Kühn, Charge and Energy Transfer Dynamics in
Molecular Systems (Wiley, 2011).
3N. Lambert, Y.-N. Chen, Y.-C. Cheng, C.-M. Li, G.-Y. Chen,
and F. Nori, Nature Phys. 9, 10 (2013).
4Y.-C. Cheng and G. R. Fleming, Annu. Rev. Phys. Chem. 60,
241 (2009).
5A. Olaya-Castro and G. D. Scholes, Int. Rev. Phys. Chem. 30,
49 (2011).
6S. F. Huelga and M. B. Plenio, Procedia Chem. 3, 248 (2011).
7H.-P. Breuer and F. Petruccione, The theory of open quantum
systems (Oxford University Press, 2002).
8A. Ishizaki, T. R. Calhoun, G. S. Schlau-Cohen,
Fleming, Phys. Chem. Chem. Phys. 12, 7319 (2010).
9A. Garg, J. N. Onuchic, and V. Ambegaokar, J. Chem. Phys.
83, 4491 (1985).
and G. R.
10C. Olbrich, J. Strümpfer, K. Schulten, and U. Kleinekathöfer,
J. Phys. Chem. Lett. 2, 1771 (2011).
11
11S. Shim, P. Rebentrost, S. Valleau, and A. Aspuru-Guzik, Bio-
12M. d. Rey, A. W. Chin, S. F. Huelga, and M. B. Plenio, J. Phys.
phys. J. 102, 649 (2012).
Chem. Lett. 4, 903 (2013).
13A. W. Chin, J. Prior, R. Rosenbach, F. Caycedo-Soler, S. F.
Huelga, and M. B. Plenio, Nature Phys. 9, 113 (2013).
14E. J. O'Reilly and A. Olaya-Castro, Nature Commun. 5, 3012
15E. K. Irish, R. Gómez-Bombarelli, and B. W. Lovett, Phys.
(2014).
Rev. A 90, 012510 (2014).
Phys. 13, 113034 (2011).
16, 053018 (2014).
16G. Ritschel, J. Roden, W. T. Strunz, and A. Eisfeld, New J.
17J. Lim, M. Tame, K. H. Yee, J.-S. Lee, and J. Lee, New J. Phys.
18A. Kolli, E. J. O'Reilly, G. D. Scholes, and A. Olaya-Castro, J.
Chem. Phys. 137, 174109 (2012).
19N. Christensson, H. F. Kauffmann, T. Pullerits, and T. Mančal,
J. Phys. Chem. B 116, 7449 (2012).
20A. Chenu, N. Christensson, H. F. Kauffmann, and T. Mančal,
Sci. Rep. 3, 2029 (2013).
21L. Turin, Chem. Senses 21, 773 (1996).
22L. Turin, J. Theor. Biol. 216, 367 (2002).
23A. Keller and L. B. Vosshall, Nature Neurosci. 7, 337 (2004).
24J. C. Brookes, F. Hartoutsiou, A. P. Horsfield, and A. M. Stone-
ham, Phys. Rev. Lett. 98, 038101 (2007).
25T. P. Hettinger, PNAS 108, E349 (2011).
26M. I. Franco, L. Turin, A. Mershin, and E. M. C. Skoulakis,
PNAS 108, 3797 (2011).
27I. A. Solov'yov, P.-Y. Chang, and K. Schulten, Phys. Chem.
Chem. Phys. 14, 13861 (2012).
28P. Kovacic, J. Electrostat. 70, 1 (2012).
29E. R. Bittner, A. Madalan, A. Czader, and G. Roman, J. Chem.
Phys. 137, 22A551 (2012).
30S. Gane, D. Georganakis, K. Maniati, M. Vamvakias, N. Ragous-
sis, E. M. C. Skoulakis, and L. Turin, PLoS ONE 8, e55780
(2013).
31D. J. Rowe, Chemistry and technology of flavors and fragrances
(Blackwell, Oxford, 2005).
32R. Axel, Angew. Chem. Int. Ed. 44, 6110 (2005).
33L. B. Buck, Angew. Chem. Int. Ed. 44, 6128 (2005).
34S. H. Lee, O. S. Kwon, H. S. Song, S. J. Park, J. H. Sung, J. Jang,
and T. H. Park, Biomaterials 33, 1722 (2012).
35R. H. Farahi, A. Passian, L. Tetard, and T. Thundat, ACS
Nano 6, 4548 (2012).
36R. B. Silverman, The Organic Chemistry of Enzyme-catalyzed
Reactions (Academic Press, London, 2002).
37L. Haffenden, V. Yaylayan, and J. Fortin, Food Chem. 73, 67
(2001).
38G. M. Dyson, Chem. Ind. 57, 647 (1938).
39R. H. Wright, J. Theor. Biol. 64, 473 (1977).
40R. H. Wright, The sense of smell (CRC Press, 1982).
41J. Lambe and R. C. Jaklevic, Phys. Rev. 165, 821 (1968).
42C. J. Adkins and W. A. Phillips, J. Phys. C 18, 1313 (1985).
43R. A. Marcus, J. Chem. Phys. 24, 966 (1956).
44R. A. Marcus, Annu. Rev. Phys. Chem. 15, 155 (1964).
45R. A. Marcus, J. Chem. Phys. 43, 679 (1965).
46R. Marcus and N. Sutin, Biochim. Biophys. Acta. 811, 265
(1985).
47M. Bixon and J. Jortner, Adv. Chem. Phys. 106, 35 (1999).
48T. Holstein, Ann. Phys. 8, 325 (1959).
49T. Holstein, Ann. Phys. 8, 343 (1959).
50B. Jackson and R. Silbey, J. Chem. Phys. 78, 4193 (1983).
51A. Nazir, Phys. Rev. Lett. 103, 146404 (2009).
52S. Jang, Y.-C. Cheng, D. R. Reichman, and J. D. Eaves, J.
Chem. Phys. 129, 101104 (2008).
53S. Jang, J. Chem. Phys. 131, 164101 (2009).
54S. Jang, J. Chem. Phys. 135, 034105 (2011).
55D. P. S. McCutcheon and A. Nazir, New J. Phys. 12, 113042
(2010).
56D. P. S. McCutcheon and A. Nazir, Phys. Rev. B 83, 165101
57A. Kolli, A. Nazir, and A. Olaya-Castro, J. Chem. Phys. 135
58D. P. S. McCutcheon and A. Nazir, J. Chem. Phys. 135, 114501
59L. Buck and R. Axel, Cell 65, 175 (1991).
60For ω0 = 200 meV and T = 300 K this corresponds to the odorant
initial state being essentially the ground state, and is therefore
consistent with the initial condition in the rate analysis.
61The DA dynamics is generally well fitted by a biexponential form.
62Note that the ET rates used to calculate the dashed curves in
panels (i - iii) of Fig. 2 do agree with the MJ rates.
63L. G. Remus and M. P. Blencowe, Phys. Rev. B 86, 205419
(2011).
(2011).
154112 (2011).
(2012).
12
64N. Lambert and F. Nori, Phys. Rev. B 78, 214302 (2008).
65A. D. Armour and M. P. Blencowe, New J. Phys. 10, 095004
66A. D. Armour and M. P. Blencowe, New J. Phys. 10, 095005
(2008).
(2008).
67D. Xu and K. Schulten, Chem. Phys. 182, 91 (1994).
68R. E. Blankenship, Molecular mechanisms of photosynthesis
69S. H. Lee, H. J. Jin, H. S. Song, S. Hong, and T. H. Park, J.
(Blackwell, Oxford, 2002).
Biotechnol. 157, 467 (2012).
70L. Du, C. Wu, Q. Liu, L. Huang, and P. Wang, Biosens. Bio-
electron. 42, 570 (2013).
|
1803.11085 | 1 | 1803 | 2018-03-29T14:11:56 | Non-Gaussian Current Fluctuations in a Short Diffusive Conductor | [
"cond-mat.mes-hall"
] | We report the measurement of the third moment of current fluctuations in a short metallic wire at low temperature. The data are deduced from the statistics of voltage fluctuations across the conductor using a careful determination of environmental contributions. Our results at low bias agree very well with theoretical predictions for coherent transport with no fitting parameter. By increasing the bias voltage we explore the cross-over from elastic to inelastic transport. | cond-mat.mes-hall | cond-mat | a
Non-Gaussian Current Fluctuations in a Short Diffusive Conductor
Edouard Pinsolle,1 Samuel Houle,1 Christian Lupien,1 and Bertrand Reulet1
1Institut Quantique, D´epartement de Physique, Universit´e de Sherbrooke, Sherbrooke, Qu´ebec J1K 2R1, Canada.
(Dated: June 30, 2021)
We report the measurement of the third moment of current fluctuations in a short metallic wire
at low temperature. The data are deduced from the statistics of voltage fluctuations across the
conductor using a careful determination of environmental contributions. Our results at low bias
agree very well with theoretical predictions for coherent transport with no fitting parameter. By
increasing the bias voltage we explore the cross-over from elastic to inelastic transport.
Over the years the study of current fluctuations, and in
particular their variance (or second moment) (cid:104)δI 2(cid:105), has
given new insights in the properties of quasi-particles in
conductors. The study of the symmetry of the Kondo
state in carbon nanotubes [1] or the observation of heat
quantization [2] are recent examples of such measure-
ments. Despite this success there has been only a few at-
tempts to push deeper the study of current fluctuations
in mesoscopic conductors by tackling the measurement
of higher order moments such as the third one (cid:104)δI 3(cid:105).
As far as we know, such measurements have been per-
formed only in tunnel junctions [3 -- 6], quantum dots [7 --
10] and avalanche diodes [11], revealing physics hidden
in the study of the second moment such as the coupling
with the environment [3], the dynamics of quantum noise
[5] or the ordering of operators in a quantum measure-
ment [6]. Higher order moments of current fluctuations
in even the simplest system, an electrical wire, has never
been probed experimentally. This letter reports such a
measurement.
The variance of current fluctuations in a diffusive wire
has been calculated using many techniques [12 -- 14], all
providing the same answer for the spectral density of cur-
rent fluctuations SI 2 measured at temperature T with a
voltage bias V :
SI 2 =
2
3
2kBT
R
+
1
3
eV
R
coth
eV
2kBT
,
(1)
where R is the sample resistance, e the electron charge
and kB the Boltzmann's constant. This result indi-
cates the existence of shot noise with a Fano factor
F2 = e−1dSI 2/dI = 1/3 at large bias V (cid:29) kBT /e, which
has been confirmed experimentally [15]. The reduction
of the Fano factor as compared to that of a tunnel junc-
tion, F2 = 1, is interpreted in the quantum theory as
stemming from the existence of well transmitting chan-
nels and in the semi-classical theory from the existence
of a position-dependent distribution function. The third
moment of current fluctuations has also been calculated
by several theories [14, 16 -- 20] which at low frequency all
yield to the same spectral density SI 3 given by:
SI 3 =
1
15
e2I +
12
5
kBT
dSI 2
dV
.
(2)
This result differs from that of a tunnel junction SI 3 =
e2I on two main factors: first it depends on temperature;
second it has a much lower Fano factor at high voltage,
F3 = e−2dSI 3/dI = 1/15 instead of F3 = 1 for the tun-
nel junction. While this prediction comes in the quantum
regime again from the statistical distribution of transmis-
sions, the semi-classical prediction involves a "cascade"
or feedback mechanism similar to that explaining envi-
ronmental contributions.
Eq. (2) corresponds to a measurement performed with
a noiseless voltage bias and an ammeter, i.e. an appa-
ratus with an input impedance much lower than that of
the sample. This situation can be achieved with a high
impedance sample, but a typical metallic wire has a low
impedance and one has to consider the effects of both
the finite impedance of the environment, here a resis-
tance RA (the input impedance of the amplifier), and
the current noise experienced by the sample, here gener-
ated by the amplifier used to detect current fluctuations
and described by a noise spectral density SA. These con-
tributions to the spectral density of the variance of volt-
age fluctuations across the amplifier's input resistance
are simply given by:
SV 2 = R2
D (SI 2 + SA) ,
(3)
with RD = RRA/(R + RA). Here the environment only
renormalizes the noise generated by the sample and adds
a contribution which does not depend on the tempera-
ture or bias voltage. In contrast, environmental effects
are much more subtle on the third moment of voltage
fluctuations. They have been thoroughly studied both
theoretically [21, 22] and experimentally [3, 4] and obey:
SV 3 = −R3
DSI 3 + 3R4
D(SA + SI 2)
dSI 2
dV
.
(4)
As a consequence, a reliable way to characterize all the
environmental terms is required to extract the intrinsic
third moment of current fluctuations SI 3.
In the following we show the measurement of SI 3 for a
short metallic wire placed at very low temperature. We
describe the experimental setup and the results for SV 3,
the calibration of the environmental contributions using
2
FIG. 1. Schematics of the experimental setup. A/D repre-
sents a 14 bits, 400 MSample/s digitizer.
a tunnel junction and the results for SI 3. We compare
these results with the theoretical prediction of Eq. (2)
in the elastic transport regime. We also report measure-
ments performed at high bias that explore the crossover
to the inelastic regime.
Experimental setup. The sample is a 1 µm long, 10
nm wide, 165 nm thick Aluminum (Al) wire of resistance
Rw = 30.5 Ω. Its contacts, also made of Al, are much
larger (400 µm×400 µm) and thicker (200 nm) to make
sure they behave as good electron reservoirs [23]. An
Al tunnel junction of resistance Rj = 34 Ω is used as
a reference to calibrate the setup. Both samples have
been made by e-beam lithography and the metal has
been deposited by double angle evaporation [24]. The
experimental setup is presented in Fig. 1. The samples
are placed on the 7 mK stage of a dilution refrigerator.
They are kept in their normal, non superconducting state
with the help of a strong Neodymium permanent mag-
net. The two samples are connected to a cryogenic mi-
crowave switch which allows us to measure either of them
without changing anything in the detection circuit. They
are dc current biased through the dc port of a bias-tee
and ac coupled to a cryogenic microwave amplifier in the
range 40 MHz-1 GHz. The use of a cryogenic amplifier
both optimizes the signal to noise ratio and minimizes
the noise experienced by the sample which leads to en-
vironmental contributions. The signal is further ampli-
fied at room temperature in order to achieve a level high
enough for digitization. Non-linearities in the detection
are very detrimental since they lead to strong artifacts.
Despite the use of ultra-linear amplifiers, non-linearities
still give rise to a contribution which is an even function
of I in the sample. We simply remove this by considering
[SV 3(I) − SV 3(−I)]/2. After amplification the signal is
digitized by a 14 bit, 400 MS/s digitizer with a 1 GHz
analog bandwidth. We measure real-time histograms of
FIG. 2. Third moment of voltage fluctuations SV 3 for the wire
(purple) and the tunnel junction (orange) vs. I. Symbols are
experimental data; the solid line is a fit for the tunnel junction
using Eq. (4) with SI3 = e2I, from which the environmental
parameters are deduced. Inset: the second moment of current
fluctuations SI2 vs. I (the noise of the amplifier has been
subtracted for the sake of clarity).
the signal from which moments are computed.
Results: elastic transport.
In the inset of Fig. 2 we
present the measurement of SV 2 for the tunnel junction
(orange symbols) and the wire (purple). From the high
current slope of SV 2 vs. I for the tunnel junction we find
the gain of the setup. Then, we deduce the Fano factor
of the wire F2 = 0.35± 0.02, in good agreement with the
theoretical value of 1
3 in Eq. (1). This ensures that elec-
tron transport is elastic in the sample, in agreement with
other measurements of similar wires [15, 25]. From SV 2
we also deduce the electron temperature for the wire and
for the tunnel junction, as well as the noise temperature
of the amplifier Ta (cid:39) 7.5 K. Values of the temperature
indicated in the various figures correspond to electronic
temperatures deduced from the measurements of SV 2.
Fig. 2 presents the measurement of SV 3 vs. I for the tun-
nel junction and the wire at a temperature around 650
mK (we have performed similar measurements down to
120 mK). As a consequence of small Fano factors F2 and
F3 the signal is much weaker for the wire, but the signal-
to-noise ratio clearly allows for a reliable comparison with
theory (each point is averaged for 20 min). Following the
procedure of [26], we use the measurements performed
at all temperatures on the tunnel junction to extract the
parameters that characterize the environment, i.e. the
amplifier impedance RA = 44.8 Ω and the effective envi-
ronmental noise temperature T ∗
0 = 0.54 K. An example
of fit on the tunnel junction SV 3 is provided as a solid
line on Fig. 2. From the knowledge of the environmen-
tal parameters we can extract the intrinsic third moment
of current fluctuations in the wire using Eq. (4). The
JunctionWireA/D40MHz-1GHz201510505101520Current (µA)1.00.50.00.51.0SV3 (×10−39 V3/Hz2)Junction T=640 mKWire T=660 mK20020Current (µA)024SV2 (×10−21 V2/Hz) 3
FIG. 3.
Intrinsic third moment of current fluctuations SI3
vs. I for the wire at different temperatures. Symbols are
experimental data, lines are the theoretical expectations of
Eq. (2). Inset: SI3 for the tunnel junction (orange) and the
wire (purple) for higher currents up to 0.3 mA at T ∼ 640 mK.
corresponding results are plotted in Fig. 3. The theo-
retical predictions of Eq. (2) are plotted as solid lines
with no fitting parameters. A clear agreement between
experiment and theory is achieved at all temperatures for
the current range explored. At low current (eV < kBT )
we observe that all curves merge, which corresponds to
a Fano factor F3 = 1/3 independent of temperature (the
fact that the Fano factor of SI 3 at low current is the same
as that of SI 2 at high current has been predicted to come
from the Pauli principle [14, 19]). At high current, we ob-
serve that SI 3 grows linearly with current with a slope
F3 = 1/15 that is temperature independent. However
there is a constant shift which increases with tempera-
ture.
In this limit, both SI 2 and SI 3 increase linearly
with temperature, while for a tunnel junction none of
them do.
From elastic to inelastic transport. Electronic trans-
port in short samples at very low energy (voltage and
temperature) is elastic. When energy is increased, inelas-
tic processes are more and more effective, starting with
electron-electron interactions which tend to thermalize
the electrons among themselves, followed by electron-
phonon interactions which tend to thermalize the elec-
trons to the phonon bath of the substrate. This man-
ifests itself in the variance of current fluctuations in a
wire by the Fano factor F2 going from 1/3 (cid:39) 0.33 in
3/4 (cid:39) 0.43 in the hot electron
the elastic regime to
regime (strong electron-electron, no electron-phonon in-
teraction) and decaying to zero as the electron-phonon
interaction becomes effective [27]. We show in Fig. 4(a)
a lin-log plot of F2 for our wire vs I. F2 is obtained
by taking the numerical derivative of SI 2 vs.
I after
smoothing of the experimental data. After a sharp rise
√
FIG. 4. a) Fano factor of the second moment of current fluc-
tuation F2 = e−1dSI2 /dI for the wire vs. I. b) Fano factor of
the third moment of current fluctuations F3 = e−2dSI3 /dI for
the wire vs. I. Different symbols correspond to different tem-
peratures ranging from 130 mK to 660 mK. The black lines
correspond to the theoretical prediction in the elastic regime.
Dashed (dotted dashed) line corresponds to the current for
which Le−e = L (Le−ph = L).
when eV < kBT , F2 has a short plateau at ∼ 0.35. This
corresponds to the elastic regime described by Eq. (1),
shown as solid lines in the figure. At higher bias F2 slowly
increases up to ∼ 0.37 at I ∼ 80 µA, followed by a de-
cay down to 0.28 at I = 0.3 mA. We could not apply a
stronger current in the sample without taking the risk to
damage it. We do not observe a plateau at F2 (cid:39) 0.43 that
would correspond to inelastic scattering being dominated
by electron-electron interactions.
Inelastic processes should also affect the third moment
of current fluctuations. We show in Fig. 4(b) the Fano
factor F3 vs. I, deduced from SI 3 . The theoretical pre-
diction of Eq. (2) (elastic transport) corresponds to F3
going from 1/3 at eV < kBT to 1/15, as shown as a
solid line in Fig. 4(b). We clearly observe this transi-
201510505101520Current (µA)3210123SI3/e2 (µA)130 mK270 mK470 mK660 mK0100200300Current (µA)0100200SI3/e2 (µA)junctionwire100101102Current (µA)0.000.050.100.150.200.250.30F30.000.050.100.150.200.250.300.350.400.45F2Le−e=LLe−ph=L0.430.25b)a)Le−e=LLe−ph=L0.430.25b)a)Le−e=LLe−ph=L0.430.25b)a)Le−e=LLe−ph=L0.430.25b)a)130mK270mK470mK660mK tion in the experimental data, even though we explore
the regime eV < kBT deep enough only at the high-
est temperature, where the plateau F3 = 1/3 is visible.
F3 in the hot electron regime has been predicted to be
given by 8/π2 − 9/16 (cid:39) 0.25 while electron-phonon in-
teraction is expected to lead to a vanishing F3 at high
enough energy. We indeed observe an increase of F3 up
to ∼ 0.14 at I ∼ 150 µA followed by a slow decrease
down to F3 ∼ 0.10 at I = 0.3 mA.
The crossover between the different regimes should
occur when the length of the sample is of the order
of the corresponding inelastic length, Le−e for electron-
electron interaction or Le−ph for electron-phonon inter-
action. Both decrease when the bias voltage or the elec-
tron temperature is increased. Thus an increase of the
current flowing through the sample tends to decrease the
inelastic lengths. Two vertical lines in Fig. 4 represent
the calculated current for which L = Le−e (left) and
L = Le−ph (right). Hence the left part of the plots cor-
responds to the elastic regime (L > Le−e, Le−ph), the
region between the vertical lines correspond to the hot
electron regime (Le−e < L < Le−ph) and the right re-
gion to the phonon cooled regime (L > Le−e, Le−ph).
The intermediate region where electron-electron interac-
tion dominates is clearly very narrow, which explains why
we never observe the expected values of the Fano factors
calculated in the hot electron regime. To our knowledge
the crossover between the elastic and electron-electron
regimes has never been theoretically studied. Deep in
the electron-phonon regime, the noise in a wire is under-
stood as Johnson-Nyquist noise of a sample at a uniform
electronic temperature T determined by the balance be-
tween Joule heating and phonon cooling, i.e.:
(5)
RI 2 = ΣΩ(cid:0)T n − T n
(cid:1) ,
ph
where Tph is the phonon temperature, Σ the electron
phonon coupling constant, Ω the sample volume and n
a number ranging from 4 to 6 depending on the sample
purity. Thus the noise spectral density SI 2 = 2kBT /R
increases with current with a decaying Fano factor F2 ∝
I 2/n−1 at large current. However SI 3 in the electron-
phonon regime has been calculated to decrease to zero
at high current (or zero phonon temperature Tph = 0) as
[18, 28]:
SI 3 ∝ k2
BR2/n−2
(ΣΩ)2/n
I 4/n−1.
(6)
This result can be understood using the following sim-
ple model, which gives the same result as a full calcula-
tion using cascaded Boltzmann-Langevin equations with
a position-dependent distribution function for the elec-
trons. Let us consider the wire of length L (cid:29) Le−ph
as many wires connected in series. Each wire exhibits
thermal noise with zero third moment. However for each
wire, all the others play the role of an electromagnetic
4
environment that has voltage-dependent noise, i.e. leads
to environmental contributions. This immediately leads
to:
SI 3 = 3SI 2
dSI 2
dI
,
(7)
which gives Eq. (6) for Johnson-Nyquist noise at a tem-
perature T given by Eq. (5). In contrast with SI 2, SI 3
is expected to exhibit a maximum in current, then a de-
cay at high current. We show in the inset of Fig. 3 our
measurements of SI 3 vs. I up to 0.3 mA. We observe
that SI 3 for the tunnel junction is strictly linear up to
the highest current, as expected. The wire deviates from
the linear behavior of Eq. (2) and barely shows any sign
of saturation (but F3 decays slightly for the highest cur-
rent, see Fig. 4(b)). For this sample Σ and n have been
measured [29] and we expect to observe F3 ∝ I−6/5 at a
current of I >∼ 0.5 mA, which we did not reach.
It is noteworthy that taking n = 4 in Eq. (5) leads
to a third moment of current fluctuations saturating at
high current, and not decaying. Such a value of n has
been observed in thin Au wires [30]. A saturation of
SI 3 would however not violate the central limit theorem,
neither when considering a sample of arbitrary length or
I 2 ∝ I−3/4L−1/2.
an arbitrary large current since SI 3 /S3/2
Conclusion. We have measured the third moment of
current fluctuations in a wire, thus demonstrating that
even the simplest conductor exhibits non-Gaussian noise.
Our data at low voltage are in very good quantitative
agreement with the theory. In particular we have found a
Fano factor F3 = 1/15 characteristic of elastic transport
in diffusive conductors. At higher current we recorded
a clear deviation from the elastic regime, when inelas-
tic scattering lengths become of the order of the sample
length.
Third moment of current fluctuations, whether intrinsic
or environmentally induced, have been shown to affect
decoherence in quantum dots [31] and should be taken
into account to explain observed coherence times.
Our experiment also demonstrates the possibility to mea-
sure the third moment of current fluctuations with a
great bandwidth ∼ 1GHz (and thus a great sensitiv-
ity) in conductors of moderate resistance, while also get-
ting rid of environmental contributions thanks to a cryo-
genic calibration procedure. This opens the possibility to
study many more systems where the statistics of electron
transport is more complex. For example in the presence
of proximity effect where multiple Andreev reflections
have been predicted to lead to a diverging third moment
[32, 33], in the vicinity of a phase transition [34] or in
conductors where electron-electron interactions are more
prominent.
We acknowledge technical help of G. Lalibert´e. This
work was supported by the Canada Excellence Research
Chair program, the NSERC the MDEIE, the FRQMT
via the INTRIQ, the Universit´e de Sherbrooke via the
EPIQ and the Canada Foundation for Innovation.
[1] M. Ferrier, T. Arakawa, T. Hata, R. Fujiwara, R. Dela-
grange, R. Weil, R. Deblock, R. Sakano, A. Oguri, and
K. Kobayashi, Nature Physics 12, 230 (2015).
[2] S. Jezouin, F. D. Parmentier, A. Anthore, U. Gennser,
A. Cavanna, Y. Jin, and F. Pierre, Science 342, 601
(2013).
[3] B. Reulet, J. Senzier, and D. E. Prober, Phys. Rev. Lett.
91, 196601 (2003).
[4] Y. Bomze, G. Gershon, D. Shovkun, L. Levitov, and
M. Reznikov, Phys. Rev. Lett. 95, 176601 (2005).
[5] J. Gabelli and B. Reulet, Phys. Rev. Lett. 100, 026601
(2008).
[6] J. Gabelli and B. Reulet, Journal of Statistical Mechan-
ics: Theory and Experiment 2009, P01049 (2009).
[7] S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser,
and
T. Ihn, P. Studerus, K. Ensslin, D. C. Driscoll,
A. C. Gossard, Phys. Rev. Lett. 96, 076605 (2006).
[8] S. Gustavsson, R. Leturcq, M. Studer, I. Shorubalko,
T. Ihn, K. Ensslin, D. C. Driscoll, and A. C. Gossard,
Surface Science Reports 64, 191 (2009).
[9] E. V. Sukhorukov, A. N. Jordan, S. Gustavsson,
R. Leturcq, T. Ihn, and K. Ensslin, Nature Physics 3,
243 (2007).
[10] S. Gustavsson, R. Leturcq, T. Ihn, K. Ensslin, M. Rein-
wald, and W. Wegscheider, Phys. Rev. B 75, 075314
(2007).
[11] J. Gabelli and B. Reulet, Phys. Rev. B 80, 161203 (2009).
[12] C. W. J. Beenakker and M. Buttiker, Phys. Rev. B 46,
1889 (1992).
[13] K. E. Nagaev, Physics Letters A 169, 103 (1992).
[14] P.-E. Roche, B. Derrida, and B. Dou¸cot, Eur. Phys. J.
B 43, 529.
[15] M. Henny,
S. Oberholzer, C.
Strunk,
and
5
C. Schonenberger, Phys. Rev. B 59, 2871 (1999).
[16] K. E. Nagaev, Phys. Rev. B 66 (2002).
[17] J. Salo, F. W. J. Hekking, and J. P. Pekola, Phys. Rev.
B 74, 125427 (2006).
[18] D. B. Gutman and Y. Gefen, Phys. Rev. B 68, 035302
(2003).
[19] P.-E. Roche and B. Dou¸cot, Eur. Phys. J. B 27, 393
(2002).
[20] H. Lee, L. Levitov, and A. Y. Yakovets, Phys. Rev. B
51, 4079 (1995).
[21] C. W. J. Beenakker, M. Kindermann,
and Y. V.
Nazarov, Phys. Rev. Lett. 90, 176802 (2003).
[22] M. Kindermann, Y. V. Nazarov,
and C. W. J.
Beenakker, Phys. Rev. B 69, 035336 (2004).
[23] F. Giazotto, T. T. Heikkila, A. Luukanen, A. M. Savin,
and J. P. Pekola, Rev. Mod. Phys. 78, 217 (2006).
[24] M. O. Reese, D. F. Santavicca, L. Frunzio, and D. E.
Prober, IEEE Transactions on Applied Superconductiv-
ity 17, 403 (2007).
[25] H. Pothier, S. Gu´eron, N. O. Birge, D. Esteve, and M. H.
Devoret, Phys. Rev. Lett. 79, 3490 (1997).
[26] J. Gabelli, L. Spietz, J. Aumentado, and B. Reulet, New
J. Phys. 15, 113045 (2013).
[27] A. H. Steinbach, J. M. Martinis, and M. H. Devoret,
Phys. Rev. Lett. 76, 3806 (1996).
[28] B. Huard, H. Pothier, D. Esteve, and K. E. Nagaev,
Phys. Rev. B 76, 165426 (2007).
[29] E. Pinsolle, A. Rousseau, C. Lupien,
and B. Reulet,
Phys. Rev. Lett. 116, 236601 (2016).
[30] S. I. Dorozhkin, F. Lell, and W. Schoepe, Solid State
Communications 60, 245 (1986).
[31] Y. M. Galperin, B. L. Altshuler, J. Bergli, and D. V.
Shantsev, Phys. Rev. Lett. 96, 097009 (2006).
[32] S. Pilgram and P. Samuelsson, Phys. Rev. Lett. 94,
086806 (2005).
[33] J. C. Cuevas and W. Belzig, Phys. Rev. Lett. 91, 187001
(2003).
[34] D. Bagrets and A. Levchenko, Phys. Rev. B 90, 180505
(2014).
|
1412.2607 | 2 | 1412 | 2015-04-20T08:12:04 | Theory of Weyl orbital semimetals and predictions of several materials classes | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which possess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polarization and texture inversion between two electronic states at discrete momenta lend itself into protected Dirac or Weyl cones without spin-orbit coupling. We also predict several families of Weyl orbital semimetals including V$_3$S$_4$, NiTi3S6, BLi, and PbO$_2$ via first-principle band structure calculations. We find that the highest Fermi velocity predicted in some of these materials is even larger than that of the existing Dirac materials. The synthesis of Weyl orbital semimetals will not only expand the territory of Dirac materials beyond the quintessential spin-orbit coupled systems and hexagonal lattice to the entire periodic table, but it may also open up new possibilities for orbital controlled electronics or `orbitronics'. | cond-mat.mes-hall | cond-mat | Theory of Weyl orbital semimetals and predictions of several materials classes
Kapildeb Dolui1, and Tanmoy Das1,2
1Graphene Research Center and Department of Physics,
National University of Singapore, 2 Science Drive 3, 117542, Singapore
2Department of Physics, Indian Institute of Physics, Bangalore 560012, India.
(Dated: August 30, 2018)
5
1
0
2
r
p
A
0
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
7
0
6
2
.
2
1
4
1
:
v
i
X
r
a
Graphene, topological insulators, and Weyl semimetals are three widely studied materials classes which pos-
sess Dirac or Weyl cones arising from either sublattice symmetry or spin-orbit coupling. In this work, we present
a theory of a new class of bulk Dirac and Weyl cones, dubbed Weyl orbital semimetals, where the orbital polar-
ization and texture inversion between two electronic states at discrete momenta lend itself into protected Dirac or
Weyl cones without spin-orbit coupling. We also predict several families of Weyl orbital semimetals including
V3S4, NiTi3S6, BLi, and PbO2 via first-principle band structure calculations. We find that the highest Fermi ve-
locity predicted in some of these materials is even larger than that of the existing Dirac materials. The synthesis
of Weyl orbital semimetals will not only expand the territory of Dirac materials beyond the quintessential spin-
orbit coupled systems and hexagonal lattice to the entire periodic table, but it may also open up new possibilities
for orbital controlled electronics or 'orbitronics'.
Keywords: Condensed Matter Physics, Weyl Orbital Semimetal, Orbitronics
I.
INTRODUCTION
Dirac fermions emerge in solid state systems when the
band structure is embedded with any two component quan-
tum degrees of freedom such as spin or pseudospin under
specific symmetry considerations.[1 -- 6] In graphene, gapless
Dirac cones arise due to the sublattice symmetry of the hon-
eycomb lattice when the sample dimension is reduced ex-
actly to an atomically thin two-dimensional (2D) sheet.[1]
In topological insulators, an 'inverted' bulk bandgap, typi-
cally opened by spin-orbit coupling (SOC), renders Dirac ex-
citations on the surface or boundary of the sample as long
as time-reversal symmetry is held.[2, 3] Some of these spe-
cial conditions required for the formation of Dirac fermions
in graphene and topological insulators are lifted in the Weyl
semimetal framework.
In the latter family, Weyl cone is
formed in the bulk band structure where bulk conduction and
valence bands meet only at discrete momenta, and is protected
by lattice symmetry.[4 -- 6] Because Weyl nodes are easily ac-
cessible for room-temperature applications, tremendous re-
search activities have been devoted in recent years for the pre-
diction, discovery, and engineering of new Weyl semimetals
families. The predicted materials so far include Iridates,[7]
HgCr2Se4,[8, 9] A3Bi (A=Na, K, Rb),[10] β-cristobaline
BiO2,[11] and also in engineered heterostructures[12, 13].
Experimentally, Cd3As2 [14 -- 16] and Na3Bi [17, 18] have
been successfully synthesized to date as bulk Dirac materials.
Because SOC is a common ingredient for the formation
of Weyl cone in the existing Weyl semimetals and topo-
logical insulators, the corresponding materials selection is
limited to materials with heavy elements and non-magnetic
ground state. However, for spintronics and other transport re-
lated purposes, heavy-elements are less effective because they
are prone to strong many-body interaction and magnetism
which significantly enhance Dirac mass via renormalization
and/ or band gapping.[19] Some of the other possibilities are
pseudospintronics,[1, 20] and valleytronics [21 -- 23] where the
quantum control of electric current is achieved by the definite
polarization of the sublattice and 'valley' degrees of freedom,
respectively. Here the precise lattice symmetry and structural
confinement play the central role to achieve high degree of
phase coherence for the electron transport.
In this paper, we explore a different idea for the forma-
tion of bulk Dirac cones and Weyl orbital semimetals with-
out the need of SOC or structural confinement. We develop
a generic low-energy theory for the Weyl orbital semimetals
for various combinations of different orbitals, such as even
and odd orbitals pair or bonding and antibonding states or pair
of even or pair of odd orbitals or two different basis of same
orbital, in variety of 3D lattices. The key ingredient in our
theory roots in finding the optimum conditions in which the
two orbitals states commence inverted band structure, and at
the same time their inter-orbital electron hoppings obtain an
odd function of energy-momentum dispersion, such that its
low-energy Hamiltonian can be reduced to an effective k · p
- type Hamiltonian. The resulting 3D Dirac or Weyl nodes at
the orbital degenerate points are protected by orbital symme-
try. By using density functional theory (DFT), we predict four
distinct classes of materials which exemplify different mecha-
nisms for generating Weyl orbital nodes. The predicted mate-
rials have orbital components stemming from the weakly cor-
related p or d orbitals, which, thereby, stipulates very high
Weyl fermion velocity. For BLi, our first-principle estimation
of Weyl fermion velocity is ∼ 2 × 106 m/s, which is even
larger than graphene. Finally, we discuss the possibilities of
obtaining orbitronics and quantum orbital Hall effect in the
Weyl orbital semimetals.
II. THEORY
We derive the generalized theory of Weyl orbital semimet-
als starting from a multiband tight-binding model without in-
2
j=1 d2
spectrum of Hk is E±(k) = ξ+(k) ±(cid:113)(cid:80)4
where ξ±(k) = (ξ1(k) ± ξ2(k))/2. ξ−
k corresponds to d4
components, and the remaining dj vectors consist of any com-
bination of the inter-basis hopping ξnm. Given that the energy
j (k), pro-
tected Dirac or Weyl nodes commence when all four d1−4
components vanish simultaneously at discrete momenta (ξ+
acts as the chemical potential shift to the overall band struc-
ture, and is not 'in principle' required to vanish together).
Around the nodal points, the above Hamiltonian can therefore
be reduced to a general Weyl Hamiltonian[24] as Hqψ±
q =
±vF q.Γψ±
q along three momentum directions, where vF is
the Weyl Fermi velocity, q to be measured from the nodal
point. Here ψ± corresponds to Weyl fermions possessing op-
posite chirality or winding numbers, and its net value vanishes
in the whole Brillouin zone.[4 -- 6]
For brevity, we denote dispersion ξj with numeric sub-
script as intra-orbital term (ξ1,2), while English alphabetic
subscripts give inter-orbital hopping terms (ξnm = ξa/b/c).
For any pair of orbitals, the intra-orbital bands ξ1,2 have
parabolic dispersions, and the Weyl nodes can appear at the
loci of ξ1 = ξ2. This makes the Dirac mass (d4) to van-
ish at a constant energy contour as shown in Fig. 1(a), which
occurs in materials due to band inversion, and thus it is pa-
rameter dependent. The remaining three d-vector components
not only have to simultaneously vanish at discrete momenta
on the same contour, but should also contain odd-parity inter-
orbital hopping term and/or imaginary hopping term. Under
such circumstances, the effective Hamiltonian near the nodal
points can be expressed via Weyl Hamiltonian with linear dis-
persion, as demonstrated in Fig. 1(b). When all di vanish
at high-symmetry k-points, the corresponding odd-number of
cone is called 3D Dirac cone, and when cones form at non-
high-symmetry k-points, they come in pairs with opposite or-
bital Chern numbers, which are called Weyl cones.
The spinor basis for the Weyl fermions can be sought from
multiple degrees of freedom, with one pair of different orbitals
containing the above-mentioned inter-orbital hopping term,
while the other two basis can arise from the sublattice symme-
try, or from spin, or from the multiplets of the same orbitals.
For example, in a C4 symmetric lattice, s and p orbitals can
form a Weyl orbital pair in which pi multiplets fill in the re-
maining basis, or between p and d orbitals in which px/y and
dxz/yz are all degenerate along the zone diagonal direction,
and so on. Similarly, owing to crystal inversion symmetry,
a bonding state of two orbitals, and antibonding state of the
same or different two orbitals can form a Weyl orbital pair. In
Fig. 2, we demonstrate several representative combinations of
orbital and crystal symmetries for 3D Dirac or Weyl orbital
nodes. Subsequently, four predicted materials exemplify dif-
ferent combinations of orbital symmetries which can lead to
Weyl node formations.
A. Specific examples
FIG. 1. Schematic description of the formation of the Weyl orbital
semimetal.
(a) Contour of band touchings between two parabolic
bands (without the inter-orbital hoppings).
(b) As the odd-parity
inter-orbital hoppings are turned on, Weyl nodes form at discrete mo-
mentum points.
voking SOC:
H = −(cid:88)
(cid:2)tn
− (cid:88)
s,n
s,ν,n(cid:54)=m
s cn†
s±1 + µncn†
s cn
s
s cn
ν(cid:2)tnm
1s cn†
s cm
s+ν1 + tnm
s cm
s+ν2
(cid:3) .
(1)
(cid:3)
2s cn†
s
(cn
Here cn†
s ) is the creation (annihilation) fermionic opera-
tor at a lattice site s, and n, m are orbital indices. The first
term is for intra-orbital hoppings which consists of only near-
est neighbor hopping, and the second term is the chemical
potential. For the inter-orbital hoppings, we consider both the
nearest neighbor (third term) and the next-nearest neighbor
hopping (fourth term). This is because, for various orbital
and lattice geometries, either of them can be the leading term,
and can give rise to linear dispersion. The symmetry of the
Hamiltonian will remain unchanged when higher order hop-
ping parameters are included as it will be evident later.
Since we are only interested in the inter-orbital hoppings
which can give rise to linear dispersion, we restrict our dis-
cussion to the odd parity hopping between different orbitals.
For this purpose, we have introduced an index ν = ± which
changes sign when the direction of hopping is reversed. This
is the crucial part of our theory which can give imaginary hop-
ping without SOC. With a Fourier transformation to the mo-
mentum space, we obtain
Hk =
ξn(k)cn†
k cn
k +
ξnm(k)cn†
k cm
k .
(2)
(cid:88)
m(cid:54)=n
(cid:88)
n
The first term in the above equation is the intra-orbital band
dispersion for free fermions, while the second term consists
of inter-orbital hopping integrals. Without loosing generality,
Eq. 2 can be written in the basis of Dirac matrices Γj as[13]
Hk = ξ+(k)Γ0 + ξ−(k)Γ4 +
dj(k)Γj,
(3)
The
eral
intra-orbital
case with
band
nearest
dispersions
neighbor
for
hopping
the
gen-
become
3(cid:88)
j=1
Orb.1 Orbital inversion at k-contour at d4=0 (a) (b) Orbital inversion at discrete k at d1-4=0 Orb. 2 3
FIG. 2. Various possible mechanisms and dispersion properties of Weyl orbital semimetals. (a, b) Even and odd orbitals or equivalently
bonding and antibonding states lying along the zone boundary or diagonal directions, respectively, producing inter-orbital hoppings ξa/b. (c,
d) For a pair of even or odd orbitals, a linear-in-momentum hopping term ξc develops. The choices of orbitals for even and odd symmetries in
this figure are representative and more such combinations can be easily thought of. Red and blue arrows depict same phase and out-of phase
electron tunnelings, respectively. (e-j) Various illustrative cases of the formation of Dirac or Weyl nodes. In (e), both inversion and Mirror
symmetry are held which produces a single 3D Dirac cone at the Γ-point. ξa/b individually produce pairs of Weyl cones in (f, g), while ξc
produces four Weyl cones in (h, i, j). In (j), we find that Weyl cones are possible along the non-high-symmetric directions. kj and kl are any
reciprocal lattice axes. Blue to green color scale depicts the orbital weight in the dispersion spectrum.
ξ1,2(k) = −2(cid:80)
2 a2
j k2
the lattice momentum.
Equivalently, when even and odd states are placed diago-
nally in a 2D kj − kl plane (similar situation also arises in
the 3D case) as shown in Fig. 2(b), the resulting inter-band
dispersion turns out to be linear along one momentum direc-
tion (which is odd under reflection, say kl) as ξb(kj, kl) =
4itjl cos (kjaj) sin (klal) ∼ 4itjl(1 − 1
j )alkl.
On the other hand, when we consider a pair of orbitals
with same symmetry, their symmetry property prohibits the
formation of linear dispersion along the zone boundary direc-
tion. However, when either two even or two odd orbitals are
placed equidistantly along the diagonal directions, anisotropic
and odd functional electronic hybridization may arise between
them as demonstrated in Figs. 2(c)-2(d). For a pair of even
orbitals, the linear hybridization can occur between an s or-
bital and any of the t2g state of the d orbital, or between
the t2g and eg orbitals which are split in energy and mo-
mentum by either different occupation numbers, or crystal
field splitting or other effects as applicable. Since t2g or-
bitals intrinsically break crystal rotational symmetry, its or-
bital overlap term with an eg or s state becomes an odd func-
tion of momentum. This is shown in Fig. 2(c) for an exam-
j
j=x,y,z t1,2
cos (kjaj) − µ1,2, and aj
are the corresponding lattice constants. Here we discuss
various different conditions under which the inter-orbital
hopping terms ξa/b/c can obtain linear dispersion purely from
the angular dependence of the orbital symmetry, without any
specific sublattice symmetry, or SOC.
First we discuss a combination of even and odd symmetric
states (under spatial inversion) placed either along the Bril-
louin zone boundary direction in Fig. 2(a), or along the diag-
onal direction in Fig. 2(b). Even and odd states can arise from
s or d, and p or f orbitals, respectively, or from bonding and
antibonding combinations of any two orbitals or same orbitals
from different sublattices (we use the case of the bonding and
antibonding states for s orbitals in the discussion because of
its simplicity). In both cases, the odd parity orbitals give odd
functional hoppings to the even state sitting at the center un-
der reflection (ν = ± in Eq. 1). The combination in Fig. 2(a)
guarantees the corresponding inter-orbital hopping matrix el-
ement to be ξa(kj) = 2itj sin (kjaj) ∼ 2itjajkj (near the
nodal points). Here i is the imaginary number, j is the bond-
ing direction, and tj is the hopping amplitude between the
even and odd states separated by a distance of aj, and kj is
- + - + + - + - - + + - + - + - + - + - + - + - s pi dxy s px py - + - + - + + + + - + + + - σg σu (a) (c) (d) (i) (j) Orb.1 Orb. 2 (b) (g) (f) (e) (h) jlajalkjkl.
jl sin (kjaj) sin (klal) ∼ 4t(cid:48)
ple case of dxy and s orbitals. Such a combination yields
ξc(kj, kl) = 4t(cid:48)
In-
terestingly, for the same multiorbital setup along the diagonal
direction, two orthogonal odd orbitals, such as px, py are al-
lowed to hybridize. The corresponding dispersion, ξc, comes
from a linear combination of π and σ bonds.
It should be
noted that dxz and dyz orbitals can mimic odd parity orbitals
under inversion when projected onto the x -- y plane, or two an-
tibonding states would also give a similar linear hopping term.
Different combinations of ξa,b,c associated with different
Dirac matrices Γ1,2,3 determine the number and location of
possible Dirac and Weyl cones. ξa helps create nodal points
along its propagating axis, while ξb simultaneously produces
massless and massive Dirac/Weyl terms along the kl, and kj
directions, respectively. The resulting Weyl nodes always
come in multiple of two or merge into a 3D Dirac cone at
the Γ point. On the other hand, ξc term produces Weyl nodes
in multiple of n, in systems with Cn rotational symmetry, and
maintain the translational symmetry of the lattice. Some other
combinations of ξa,b,c, however, can sometimes gap out each
other's nodal states.
Some examples of such large possibility of Weyl orbital
nodes in various setup are shown in Fig. 2 (lower panel). In
Fig. 2(e), we present a single 3D Dirac cone at the Γ point
for an illustrative combination of dj = −iξa(kj) (j = x, y,
z). The 3D Dirac cone splits into pairs of Weyl points as
the inversion symmetry is lifted. Pair of Weyl cones can be
created by using either both ξa/b terms (Fig. 2(f)), or one of
them and combine it with ξc (Fig. 2(g)) which results in con-
trasting orbital texture inversions. Four Weyl cones can be
created with various combinations; for example, for a combi-
nation of ξa and ξc, and so on, as shown in Fig. 2(h). These
four Weyl nodes can be rotated from the bonding directions
toward the zone diagonal ones by breaking the correspond-
ing symmetry assigned with the Γ3 matrix. Using the same
combination as in Fig. 2(e), we get four Weyl cones along the
zone diagonal directions when d1 = ξa(kn), d2 = ξa(kj),
and d3 = ±iξa(kl) (kn is perpendicular direction to the
kj, kl plane), see Fig. 2(i). Finally, Weyl cones can appear
along non-high-symmetry directions, Fig. 2(j), for a choice of
d1 + id2 = −(i/2)ξc(kj, kl) and d3 = ±i[ξa(kj) − ξa(kl)].
However, such Weyl nodes are not protected and can be
gapped by disorder or perturbations. The details of the param-
eters used in the above presentation are listed in the Appendix.
The above examples demonstrate how two entangled de-
grees of freedom arise purely from the orbital texture inver-
sion at discrete momentum points for spinless fermions. Due
to the conservation of orbital angular momentum across the
Weyl nodes, they remain time-reversal invariant.
In these
senses, our theory of Weyl orbital semimetal is different
from the hexagonal symmetry related graphene,[1] or one-
dimensional polyacetylene,[25] or from mirror symmetry in-
duced topological crystalline insulator.[26] Opening a band
gap at the Weyl orbital points can lead to Weyl orbital topolog-
ical insulators, which is reminiscence of weak Z2 topological
insulator in time-reversal invariant systems.[2, 3]
4
III. AB-INITIO CALCULATIONS AND MATERIALS
PREDICTIONS
Electronic structure calculations are carried out by DFT
method with the generalized gradient approximation (GGA)
in the parametrization of Perdew, Burke and Ernzerhof
(PBE) [27] as implemented in the Vienna ab-initio simulation
package (VASP) [28]. Projected augmented-wave (PAW) [29]
pseudo-potentials are used to describe core electrons. The
conjugate gradient method is used to obtain relaxed geome-
tries. We include Hubbard U corrections to the GGA calcula-
tions (GGA+U) and consider the spherically averaged form of
the rotationally invariant effective U parameter with U = 3.0
eV, 5.0 eV and 4.0 eV on the correlated V 3d, Ni 3d and Ti
3d orbitals, respectively. In the cases where GGA+ U is not
considered, i.e. for BLi and PbO2, the calculation is repeated
with a different Heyd-Scuseria-Ernzerhof (HSE06) [30] hy-
brid functional to check for the band crossings, and found that
the gapless Weyl cones are intact. In the HSE06 calculations,
the same geometry as the PBE cases are used. For each sys-
tem, we have explicitly checked that the SOC does not gap out
the bulk Weyl nodes. Both atomic positions and cell parame-
ters have been allowed to relax, until the forces on each atom
are less than 5 meV/ A. The optimized lattice vectors and in-
ternal coordinates of all the atoms are listed in supplementary
Table SI. We chose both the electronic wavefunction-cutoff
energy and k-mesh (for Brillouin zone sampling) such that
the accuracy of a total energy convergence is less than 10−4
eV/unit-cell.
The structural stabilities of these materials are investigated
by calculating the phonon dispersion and the cohesive energy,
Ecoh. Force constants are calculated for a 2×2×2 super-
cell within the framework density functional perturbation the-
ory [31] using the VASP code. Subsequently, phonon dis-
persions are calculated using phonopy package [32], and the
results are shown in supplementary Fig. S1. Finally, we find
that all materials have negative cohesive energy, implying that
structure can exist in bound state.
A.
3D 'graphene' from sublattice symmetry
We first discuss the band structure of the existing V3S4
compound,[33, 34] and the origin of bulk Weyl cones in this
material. V3S4 has a monoclinic phase in the space group of
C2/m (No. 12), Fig. 3(a). A susceptibility measurement in
the polycrystalline sample of V3S4 reported an antiferromag-
netic (AFM) transition with N´eel temperature TN ∼ 9 K and
magnetic moment of ∼ 0.2 µB per V atom, and also a ferro-
magnetic (FM) phase below T ∼ 4.2 K.[35]. Our GGA+U
calculation shows that the FM phase has the lowest ground
state energy (by 36 meV/f.u. with a magnetic moment of
2.1 µB per V atom). In the FM phase, our band structure cal-
culation in Fig. 3(c) shows that all other kz-planes are 2D band
insulators, except the kz = π/c one, which has a well-defined
Weyl cone for the same spin state. Two inequivalent vanadium
atoms are placed in the corner and interior basis of the lattice,
as shown in Fig. 3(a), which obtain equal electron occupation
5
FIG. 3. Band structure and DOS of V3S4. (a) The crystal structure of V3S4, and (b) the corresponding reciprocal space. (c) Electronic band
structure is shown along the high-symmetry momentum directions, with a blue to green color gradient map which dictates the corresponding
orbital weight from two inequivalent V atoms. (d), Full dispersion of the two low-lying bands on the 'Z' plane, exhibit a single Weyl point
along Z-I1 direction in the first quadrant. The blue to red color map has not meaning in this figure. (e), Low-energy DOS (black color), and
partial DOS (blue and green) for the same two orbital states. The DOS is given in the unit of number of states per unit eV.
number. Therefore, their same d-orbitals osculate near the
Fermi level, which promote their inter atomic hybridization
to follow the even-even orbital hopping principle described
in Fig. 2(c) above. Interestingly, the characteristic band dis-
persion of V3S4 resembles 2D graphene,[1] despite the differ-
ences in the crystal structure and orbital contributions between
them. Another characteristic difference between the 2D Dirac
cone and bulk Weyl node is that in the former case, the cor-
responding density of states (DOS) is linear-in-energy across
the Dirac cone, while here it is quadratic in energy.[5] This
is indeed evident in the computed DOS of V3S4, presented in
Fig. 3(e), overlayed with the partial DOSs to demonstrate how
the DOSs of the two V atoms change across the Weyl node.
B. Weyl node induced by two even orbitals
Our next example is a ternary transition metal sulphide
NiTi3S6, in which a unusual anisotropic crystal field splitting
of the Ti d-orbitals vanishes at discrete momenta and forms
Weyl nodes, see Fig. 4. NiTi3S6 is a known material with
a lattice structure belonging to the rhombohedral lattice with
space group of R-3H (No. 148).[36] Ti has two electrons in
its 3d orbitals, which are shared between the conduction t2g
and valence eg orbitals, separated by the crystal field split-
ting of the rhombohedral lattice. To delineate the origin of
odd functional dispersion from the overlap matrix-element be-
tween the two even orbitals, let us focus on the a − b plane of
the lattice. The projected dxz orbital on the x -- y plane mim-
ics the px-type orbital in the sense that its phase changes sign
on both sides of the center position. On the other hand, dz2
orbital acts as a purely isotropic orbital on this plane. There-
fore, the inter-orbital electron tunneling between them follows
the principle depicted in Fig. 2(a), and creates orbitally polar-
ized Weyl nodes. Our predicted Weyl cones in this material
may perhaps be less compelling for functional use, however,
it exemplifies a new mechanism of the Weyl orbital semimetal
arising from the least expected momentum dependent crystal
field splitting. However, strain or pressure can be applied to
remove the additional electron/hole pockets from the Fermi
level, if needed.
C. Weyl node induced by two odd orbitals
Finally, we discuss two materials BLi and PbO2 in Fig. 5
which show multiple Weyl cones, forming at the crossing
points of two p orbitals states in their native phases. Both
materials form orthorhombic lattice.[37] Owing to the or-
thorhombic structure, the orthogonality between the px/y and
pz orbitals is lifted and the inter-orbital electronic interaction
is turned on. The bonding between the two orthogonal orbitals
stems from a linear combination of both π and σ bondings,
and thus is generally robust against strain. Our band structure
calculations show that multiple Weyl cones are formed along
the Brillouin zone boundary at kz = 0 and kz = π planes.
The projected pz states on the x -- y plane appears isotropic to
the px/y, which therefore promotes the corresponding inter-
orbital hopping to follow the scenario described in Fig. 2(a)
and/ or Fig. 2(b).
In BLi, there are two Weyl cones almost overlapping with
each other along the Γ-X direction, which are thus less sta-
ble to impurity scattering. In PbO2, Weyl cones arise from
O atoms and thus remain ungapped even after including the
SOC. Because of the small atomic number of B and O atoms,
the corresponding Weyl states are highly dispersive, and the
0 1 -1 V2 dxz V1 S a 0 0.04 DOS E (eV) b c Γ Y F II1 Z XX1 Y L Γ V1 dxz V2 V3S4 (a) (b) (c) 0 π π 0 -0.2 0.2 (d) E (eV) kx ky Tot. -50 50 0 E (meV) (e) 6
FIG. 4. Band structure and DOS of NiTi3S6. (a)-(b), Real space and reciprocal space representations of the crystal structure. (c), (d), (e),
Corresponding electronic band structure along high-symmetry directions, in 2D plane for the two lowest energy bands, and low-energy DOS,
respectively.
corresponding DOSs are reduced, see Fig. 5(e) and 5(k). We
find that the extra electron/hole-pockets from the Fermi level
in BLi are removed using HSE06 functional (not shown). Fur-
thermore, the band inversion strength for PbO2 is relatively
weak. Using relaxed lattice constants, we find Weyl nodes in
the present GGA calculation, while HSE06 functional gives
a 3D Dirac cone, and the MBJ functional looses the band in-
version. However, with small strain of about 3%, we find that
the latter two functionals also give Weyl nodes along the same
momentum directions as in GGA band structure.
The bulk-boundary correspondence associated with the
general form of Weyl Hamiltonian in transnational invariant
lattice dictates that the Fermi surface on the edge state be-
comes disconnected at the points where the bulk and edge
states merge, creating truncated Fermi surface (s) or the so-
called 'Fermi arc'.[5, 6] To ascertain that our predicted ma-
terials indeed belong to the Weyl semimetal class, we have
computed the surface state for a representative material PbO2
because of its structural simplicity. The slab of PbO2 are mod-
eled with 001 surface containing 16 atomic layers of Pb. A
14 Avacuum is place at the surface to avoid the interaction
between two consecutive supercell. The spectral weight map
of the Fermi surface of the corresponding surface state indeed
shows a 'Fermi arc' in Fig. 5(g).
IV. WEYL FERMI VELOCITY AND POSSIBILITY OF
ORBITRONICS
In Fig. 6, we compare the velocity of all four Weyl or-
bital semimetals predicted here, with the other known Dirac or
Weyl materials. All Dirac materials having Dirac cones gener-
ated as a manifestation of the SOC consist of 'post-transition
metals' with higher atomic numbers. With increasing atomic
number, the bandwidth decreases and the effects of correla-
tion increases, which all conspire in a gradual reduction of the
Fermi velocity. On the other hand, the Weyl orbital semimet-
als are applicable to any combinations of orbitals, and does
not depend on the lattice or atomic properties such as bulk
band gap or SOC. This flexibility greatly helps expanding the
territory of Dirac materials to very light atoms such as Li, B,
C, O, S, V, Ti and Ni with Weyl fermion velocity larger by
an order of magnitude. In fact, the Fermi velocity for BLi is
found to be ∼2×106m/s, which is the highest among all Dirac
materials known to date.
Any two-component quantum degrees of freedom of elec-
tron in a lattice can mathematically behave in the same way as
spin does, and therefore they can be viewed as pseudospin. In
this sense, two interlocked orbital degrees of freedom with
texture inversion enter into the low-energy Dirac equation
in precisely the same manner that real spin produces Dirac
equation in topological insulators, or Weyl semimetals, or the
pseudospin behaves in the graphene's Dirac equation. There-
fore, the physical concepts relating to the spintronics, spin-
orbitronics or pseudospintronics application also apply to the
Weyl orbital semimetals. We expect orbitally polarized charge
current or orbital current in the bulk of these materials, which
are protected by a momentum-dependent phase difference φk
(see inset to Fig. 6), generic to any Dirac electron motions.[1 --
3, 20] The corresponding Berry curvatures for the two orbitals
pick up opposite values, which can lead to quantum orbital
Hall effect. The nature of impurity scattering protection for
different quantum orbitronics cases is characteristically dif-
ferent. In the present family, an electron can only scatter from
one orbital state to another when the impurity vertex contains
a corresponding anisotropic orbital-exchange matrix-element
or if the electron dynamically passes through the momentum
and energy of the Dirac cone. Another advantage of the Weyl
0 2 -2 Γ L B1B XQ P1 Z Ti dz2 Ti Ni a 0 0.06 DOS E (eV) b c (a) (b) (c) (d) Z Γ Ti dxz S F NiTi3S4 π2 π π -0.5 kx ky 0.5 0 E (eV) -50 50 0 E (meV) (e) -100 7
FIG. 5. Band structures and DOSs of isostructural BLi and PbO2. Upper panel shows results of BLi, while the bottom panel gives the same
results for PbO2. In both systems, the orbital characters interchange between the px/y and pz orbitals of Li and O atoms, respectively, via
protected Weyl points. Large dispersions of these light elements give rise to vanishingly small DOS, which is almost zero above the Fermi
level in PbO2 in (e). (g) Spectral weight map of the surface state of PbO2 in (001) cut exhibits 'Fermi arc' behavior.
orbital semimetal is that here the Dirac cone is even immune
to time-reversal symmetry breaking, and a bulk gap can be en-
gineered by the lattice distortion. Therefore, the generation,
transport and detection of orbitally protected electric current
may lead to new opportunities for orbitronics. Chiral orbital
current in the Weyl semimetals can be detected by Kerr effect.
Possibilities of orbitronics were predicted earlier in p-doped
silicon[43] and p-doped graphene,[44] which are yet to be ob-
served.
V. CONCLUSIONS
The presented new family of Weyl orbital semimetal has the
ability to bypass many limitations imposed in other Dirac ma-
terials including atomically thin graphene, topological insula-
tors and Weyl semimetals under time-reversal invariance and
SOC. An important advantage of the 3D Dirac cone than its
2D counterpart is that in the former setup the DOS is quadratic
in energy which will be beneficial for designing faster transis-
tors and hard drive with low energy consumption. The ac-
cessibility of the Dirac fermions in topological insulators is
subjected to the bulk band gap, which can be filled by ther-
mal broadening. Such a limitation is not present in Weyl
semimetal families.[4, 5] Due to the absence of these con-
straints, the possible materials classes for the Weyl orbital
states are, in principle, expanded to the entire periodic ta-
ble. Moreover, both mechanical and chemical tuning induced
band gap in the Weyl node are appealing features which can
be useful to exciton condensation, photovoltaics and solar cell
applications, and optoelectronic technology.[45] Finally, the
discovery of Weyl orbital semimetals will open the door for a
new field of orbitronics.
Acknowledgments: We thank Hsin Lin, Su Ying Quek,
Matthias Graf for valuable discussions and hospitality. The
work is facilitated by NERSC computing allocation in the
USA and the the GRC high-performance computing facility
in Singapore.
0 2 -2 Li B a 0 0.01 Energy (eV) b c (a) (c) (d) Γ Γ X S Z U R Y T 0 1 -1 O px/y O pz Pb O a 0 1 DOS b c (b) (f) (h) (i) B pz B py (g) -0.4 0.4 -0.4 0.4 kx [π/a] ky [π/a] BLi PbO2 Γ X S Z U R Y T Γ 0 π π 0 -2 2 E (eV) kx ky -0.2 0.2 0 E (eV) DOS 0 π π kx ky 0 π kz -0.2 0.2 0 E (eV) (e) (j) (k) -50 50 0 E (eV) 8
j
jl
= ±150 meV, and tn(cid:54)=m
For the demonstration of the emergence of Dirac or Weyl
ferminons, we take a simple and minimal set of parameters for
tn, µn, and tnm: tn=1,2
= 150 meV
is taken to be same for all orbitals n, m and along any di-
rections j, l. The chemical potential can be chosen in a way
k banishes at the Γ point (µn = −6tn) or at any other
that ξ−
discrete momenta (µn = −6tn ± δ, where δ is a tunable num-
In Fig. 1 of main text, we take µ1,2 = ∓0.9 eV for
ber).
the Dirac point at the Γ, and µ1,2 = ∓0.7 eV otherwise. All
tight-binding parameters are kept same for all plots in Fig. 1.
We explicitly write down the combinations of ξa,b,c chosen
in Fig. 1 of the main text. In the following cases, we assume
Dirac or Weyl cones are present in the kj and kl plane, and kn
is the perpendicular axis. For Fig. 1E, the d-vectors are taken
to be dj = −iξa(kj), where j = 1, 2, 3 corresponding to kj,
kl and kn direction, or their various combinations. The choice
of d-vector components are
For Fig. 1(f) : d1 + id2 =
1
2
ξb(kj, kl), d3 =
1
2
ξc(kj, kl),
or d3 = −iξa(kn), or d3 = − i
2
[ξb(kj, kl) + ξb(kn, kl)] .
For Fig. 1(g) : d1 + id2 = ξa(kl), d3 =
ξc(kj, kn).
1
2
1
2
For Fig. 1(h) : d1 + id2 = ξa(kn), d3 =
ξc(kj, kl),
ξc(kj, kl), d3 = −iξa(kn).
(A1)
or d1 + id2 =
i
2
The above three cases give Weyl cones along the zone axis.
We also provide two other cases, where Weyl cones appear
along other directions when a point-group symmetry is bro-
ken. In these cases, both inter-basis hoppings between 1 to 3
and 2, 3 are taken to have same sign, violating the symmetry
associated with the Γ3 term. Such Weyl cones are probably
not as stable as others.
For Fig. 1(i) : d1 + id2 = [ξa(kn) + iξa(kj)] ,
d3 = ±iξa(kl).
For Fig. 1(j) : d1 + id2 = − i
2
ξc(kj, kl),
d3 = ±i [ξa(kj) − ξa(kl)] .
(A2)
FIG. 6. Fermi velocity of various classes of Dirac materials. Com-
puted Fermi velocity at the Dirac cone (averaged over the two in-
tersecting linear-dispersion) of the four Weyl orbital semimetals pre-
dicted here are compared with various other experimentally verified
Dirac materials. All SOC induced Dirac fermions in heavy-elements
have Fermi velocity almost an order of magnitude lower than that of
the Weyl orbital semimetals, and graphene. The horizontal coordi-
nate gives the average atomic number ( ¯Z) of the elements contribut-
ing to the Dirac cone. Gray and yellow shadings separate the two
families of Dirac materials without and with SOC, respectively. The
Fermi velocity data are taken for the surface states of the 2D topo-
logical insulator HgTe/CdTe from Ref. [38], for the 3D topological
insulator Bi2Se3 from [39], and for the topological crystalline insu-
lators (Pb,Sn)Te from Ref. 40 and 41, β-Ag2Te from Ref. 42. The
Fermi velocity at the 3D Dirac cone of the Weyl semiletals Cd3As2
is taken from Ref. 14 and 15, and for Na3Bi from Ref. 17 and 18.
The data for the non-SOC induced Dirac cone in graphene is taken
from Ref. 1. The inset figure schematically shows the possibility of
obtaining orbitally polarized electronic current with an anisotropic
phase difference, φk, protecting their quantized currents.
Appendix A: Parameter sets for Fig. 2
We use Dirac matrices of the form Γ1,2,3 = σ1⊗σ1,2,3, and
Γ4 = I ⊗ σ3, where σi are the Pauli matrices and I is 2×2
unity matrix.
Appendix B: Cohesive energy calculation
Cohesive energy of a composition, M=AxByCz, is defined
as
Ecoh = EM − xEA − yEB − zEC.
(B1)
EM is the total energy of the primitive cell of bulk M, while
EA and EB and EC are the total energy per atoms of A, B, and
C species, respectively, in their bulk form. x, y, and z are the
numbers of A, B and C atoms, respectively, assembled in the
primitive cell of M. In case of a binary material M=AxBy the
last term in Eq (B1) is omitted. Cohesive energy of considered
materials are listed in supplementary Table SII.
[1] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov,
A. K. Geim, The electronic properties of graphene,, Rev. Mod.
Phys. 81, 109 (2009).
> + 𝑒𝑖φ𝑘 > BLi Graphene PbO2 NiTi3S6 V3S4 Cd3As2 Na3Bi HgTe Bi2Se3 (Pb,Sn)Te 0 1 2 0 30 60 90 𝑍 vF [×106 m/s] β-Ag2Te 9
FIG. 8. Supplementary Figure S2: Phonon spectrum. Since some
of the materials we predict here are yet to be synthesized experi-
mentally, we carry out the phonon spectrum calculation to study the
stability of the lattice. For all materials, we find a stable phonon
spectrum.
[12] A. A. Burkov and L. Balents, Weyl Semimetal in a topological
insulator multilayer, Phys. Rev. Lett. 107, 127205 (2011).
[13] T. Das, Weyl semimetal and superconductor designed in an
orbital-selective superlattice, Phys. Rev. B 88, 035444 (2013).
[14] S. Borisenko et al., Experimental Realization of a Three-
Dimensional Dirac Semimetal, arXiv:1309.7978.
[15] M. Neupaneet al., Observation of a topological 3D Dirac
semimetal phase in high-mobility Cd3As2 and related materi-
als, arXiv:1309.7892.
[16] M. N. Ali et al., The crystal and electronic structures
the three-dimensional electronic analogue of
of Cd3As2,
graphene, Inorganic Chemistry 53, 4062 (2014).
[17] Z. K. Liu et al, Discovery of a three-dimensional topological
Dirac semimetal, Na3Bi, Science 343, 864 (2014).
[18] S. Y. Xu, et al., Observation of a bulk 3D Dirac multi-
plet, Lifshitz transition, and nestled spin states in Na3Bi,
arXiv:1312.7624.
[19] L. A. Wray et al., A topological insulator surface under strong
Coulomb, magnetic and disorder perturbations, Nat. Phys. 7,
32 (2001).
[20] D. Pesin and A. H. MacDonald, Spintronics and pseudospin-
tronics in graphene and topological insulators, Nat. Mater. 11,
409 (2012).
[21] A. Rycerz, J. Tworzydo, and C. W. Beenakker, J. Valley filter
and valley valve in graphene, Nat. Phys. 3, 172 (2007).
[22] D. Xiao, W. Yao, and Q. Niu, Valley-contrasting physics in
graphene: Magnetic moment and topological transport, Phys.
Rev. Lett. 99, 236809 (2007).
[23] C. E. Nebel, Valleytronics: Electrons dance in diamond, Nat.
Mater. 12, 690 (2013).
[24] H. Weyl, Zeitschrift fur Physik 56, 330 (1929).
[25] W. P. Su, J. R. Schrieffer, and A. J. Heeger, Solitons in
polyaeetylene, Phys. Rev. Lett. 42, 1698 (1979).
[26] L. Fu, Topological crystalline insulator. Phys. Rev. Lett. 106,
106802 (2011).
FIG. 7. Supplementary Figure S1: Comparison of band struc-
ture with and without spin-orbit coupling. Here we show the same
band structure, plotted in the main figure, for all four materials stud-
ied in this paper, but with and without including the spin-orbit cou-
pling effect. Expectedly, spin-orbit coupling in these materials is
small enough to gap the orbital degenerate point at the Weyl nodes,
which provide further justification that the Weyl nodes are protected.
[2] M. Z. Hasan and C. L. Kane, Colloquium: Topological insula-
tors, Rev. Mod. Phys. 82, 3045 (2010).
[3] X. L. Qi and S. C. Zhang, Topological insulators and supercon-
ductors, Rev. Mod. Phys. 83, 1057 (2011).
[4] A. A. Burkov, M. D. Hook, and L. Balents, Topological nodal
semimetals, Phys. Rev. B 84, 235126 (2011).
[5] A. M. Turner and A. Vishwanath, Beyond band insu-
Topology of semi-metals and interacting phases,
lators:
arXiv:1301.0330.
[6] O. Vafek, and A. Vishwanath, Dirac fermions in solids: From
high-Tc cuprates and graphene to topological insulators and
Weyl semimetals, Ann. Rev. Cond. Mat. Phys. 5, 83 (2014).
[7] X. Wan. A. M. Turner, A. Vishwanath, and S. Y. Savrasov,
Topological semimetal and Fermi-arc surface states in the elec-
tronic structure of pyrochlore iridates, Phys. Rev. B 83, 205101.
(2011).
[8] G. Xu, H. Weng, Z. Wang, X. Dai, Z. Fang, Chern Semimetal
and the Quantized Anomalous Hall Effect in HgCr2Se4, Phys.
Rev. Lett. 107, 186806 (2011).
[9] C. Fang, M. J. Gilbert, X. Dai, and B. A. Bernevig, Multi-Weyl
Topological Semimetals Stabilized by Point Group Symmetry,
Phys. Rev. Lett. 108, 266802 (2012).
[10] Z. Wang et al., Dirac semimetal and topological phase transi-
tions in A3Bi (A=Na, K, Rb), Phys. Rev. B 85, 195320 (2012).
[11] S. M. Young et al., Dirac semimetal in three dimensions, Phys.
Rev. Lett. 108, 140405 (2012).
ΓYFLII1ZΓXY-0.200.2WOSOCWSOCΓXSYΓZURTZ-101ΓXSYΓZURTZ-0.300.3 E - EF (eV)ΓLB1BZΓXQFP1Z-0.500.5(a)(c)(b)(d)V3S4BLiPbO2NiTi3S6ΓYFLII1ZΓXX1Y0510 Frequency (THz)ΓXSYΓURTZ02040Frequency (THz)ΓXSYΓURTZ051015ΓLB1BZΓXQFP1Z0510(a) V3S4(b) BLi(d) NiTi3S6(c) PbO2 [27] J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient
approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
[28] G. Kresse, and J. Furthmuller, Efficient iterative schemes for
ab-initio total-energy calculations using a plane-wave basis set,
Phys. Rev. B 54, 11169 (1996).
[29] G. Kresse, and D. Joubert, From ultrasoft pseudopotentials to
the projector augmented-wave method, Phys. Rev. B 59, 1758
(1999).
[30] J. Heyd, G. E. Scuseria, M. Ernzerhof, Hybrid functionals
based on a screened Coulomb potential, J. Chem. Phys. 118,
8207 (2003).
[31] X. Gonze, Perturbation expansion of variational principles at
arbitrary order. Phys. Rev. A 52, 1086-1095 (1995).
[32] A. Togo, F. Oba, I. Tanaka, First-principles calculations of the
ferroelastic transition between rutile-type and CaCl2-type SiO2
at high pressures. Phys. Rev. B 78, 134106 (2008).
[33] I. Kawada, M. Nakano-Onoda, M. Ishii, M. Saeki, M. Nakahira,
Crystal structures of V3S4 and V5S8, J. Sol. Stat. Chem. 15, 246
(1975).
[34] C. Mujica J. Llanos, and O. Wittke, Structure refinement of
monoclinic V3S4, J. Alloy. Comp., 226, 136 (1995).
[35] Y. Tazuke, T. Sato, and Y. Miyako, Susceptibility and specific
heat studies on V3S4, J. Phys. Soc. Jap. 51, 2131 (1982).
[36] P. Villars et al. (2010) in Structure Types. Part 8: Space Groups
(156) P3m1 (148) R-3 (Villars, P. & Cenzual, K.) 612-612
(Springer Berlin Heidelberg).
10
[37] Y. C. Choi et al., Synthesis of crystalline lead di-oxide
nanowires and their electron-beam-induced phase transforma-
tion to oxygen deficient lead mono-oxide, J. Korean Phys. Soc.
51, 2045 (2007).
[38] M. Kronig et al. Quantum spin Hall insulator state in HgTe
quantum wells. Science 318, 766-770 (2007).
[39] Y. Xia et al. Observation of a large-gap topological-insulator
class with a single Dirac cone on the surface. Nat. Phys. 5, 398-
402 (2009).
[40] Y. Tanaka et al. Experimental realization of a topological crys-
talline insulator in SnTe. Nat. Phys. 8, 800-803 (2012).
[41] S. Y. Xu et al. Observation of a topological crystalline insula-
tor phase and topological phase transition in Pb1−xSnxTe. Nat
Commun 3, 1192 (2012) .
[42] S. Lee et al. Single crystalline β-Ag2Te nanowire as a new topo-
logical insulator. Nano Lett. 12, 4194-4199 (2012).
[43] B. A. Bernevig, T. L. Hughes and S. C. Zhang, Orbitronics: The
intrinsic orbital current in p-doped silicon, Phys. Rev. Lett. 95,
066601 (2005).
[44] I. V. Tokatly, Orbital momentum Hall effect
in p-doped
graphane Phys. Rev. B 82, 161404 (2010).
[45] H. Wei, S. P. Chao and V. Aji, Excitonic phases from Weyl
semimetals, Phys. Rev. Lett. 109, 196403 (2012).
[46] Setyawan W, Curtarolo S (2010) High-throughput electronic
structure calculations: challenges and tools. Comp. Mat. Sci.
49:299.
[47] Curtarolo S, et al. (2012) AFLOWLIB.ORG: a distributed ma-
terials properties repository from high-throughput ab initio cal-
culations. Comp. Mat. Sci. 58:227.
11
Crystal structure
a=6.65987 A, b=6.65987 A, c = 6.19743 A;
α = 64.050◦, β = 64.050◦, γ = 30.759◦
a= 6.68709 A, b= 6.68709 A, c = 6.68709 A;
α = 52.977◦, β = 52.977◦, γ = 52.977◦
a= 5.11933 A, b = 5.57092 A, c = 6.05971 A;
α = 90.000◦, β = 90.000◦, γ = 90.000◦
a = 3.07497 A, b = 5.67574 A, c = 6.13950 A;
α = 90.000◦, β = 90.000◦, γ = 90.000◦
Material
V3S4
NiT3S6
PbO2
BLi
Atoms
x
y
z
0.000 0.000 0.000
V1
0.737 0.737 0.285
V2
0.263 0.263 0.715
V3
0.637 0.637 0.019
S4
0.363 0.363 0.981
S5
0.120 0.120 0.551
S6
0.880 0.880 0.449
S7
0.500 0.500 0.500
Ni1
0.000 0.000 0.000
Ti2
0.671 0.671 0.671
Ti3
0.329 0.329 0.329
Ti4
0.093 0.415 0.747
S5
0.415 0.747 0.093
S6
0.747 0.093 0.415
S7
0.907 0.585 0.253
S8
0.585 0.253 0.907
S9
0.253 0.907 0.585
S10
0.000 0.250 0.177
Pb1
0.500 0.750 0.323
Pb2
0.000 0.750 0.823
Pb3
0.500 0.250 0.677
Pb4
0.734 0.429 0.405
O5
0.766 0.929 0.095
O6
0.266 0.071 0.405
O7
0.234 0.571 0.095
O8
O9
0.266 0.571 0.595
O10 0.234 0.071 0.905
O11 0.734 0.929 0.595
O12 0.766 0.429 0.905
0.750 0.473 0.500
B1
0.250 0.973 0.000
B2
0.250 0.527 0.500
B3
B4
0.750 0.027 1.000
0.750 0.755 0.254
Li5
0.250 0.255 0.246
Li6
0.250 0.245 0.746
Li7
Li8
0.750 0.745 0.754
TABLE I. Supplementary Table SI. DFT relaxed crystal structure and atomic coordinates of different Weyl orbital semimetals.
Materials Ecoh (eV)
V3S4
B1Li
PbO2
NiTi3S6
-9.27
-0.38
-2.48
-12.30
TABLE II. Supplementary Table SII. Theoretically calculated co-
hesive energy for different Weyl orbital semimetal classes.
|
1703.05678 | 1 | 1703 | 2017-03-16T15:42:08 | Role of Charge Traps in the Performance of Atomically-Thin Transistors | [
"cond-mat.mes-hall",
"cond-mat.mtrl-sci"
] | Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices. | cond-mat.mes-hall | cond-mat | Role of Charge Traps in the Performance of
Atomically-Thin Transistors
Iddo Amit1, Tobias J. Octon2, Nicola J. Townsend1, Francesco Reale3, C. David Wright2, Cecilia
Mattevi3, Monica F. Craciun2 and Saverio Russo1†
1Centre for Graphene Science, Department of Physics, University of Exeter, Stocker Road, Exeter,
2Centre for Graphene Science, Department of Engineering, University of Exeter, North Park Road,
United Kingdom, EX4 4QL
Exeter, United Kingdom, EX4 4QF
3Department of Materials, Imperial College London, United Kingdom, SW7 2AZ
†S.Russo@exeter.ac.uk
Abstract
Transient currents in atomically thin MoTe2 field-effect transistor are measured during cycles of
pulses through the gate electrode. The transients are analyzed in light of a newly proposed model
for charge trapping dynamics that renders a time-dependent change in threshold voltage the dom-
inant effect on the channel hysteretic behavior over emission currents from the charge traps. The
proposed model is expected to be instrumental in understanding the fundamental physics that governs
the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based
devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic
devices.
7
1
0
2
r
a
M
6
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
1
v
8
7
6
5
0
.
3
0
7
1
:
v
i
X
r
a
1
The emerging family of atomically thin materials is fueling the development of conceptually new
technologies1 in highly-efficient optoelectronics2,3 and photonic applications,4 to name a few. The
large variety of band gap values found in layered transition metal dichalcogenides (TMDC)5,6 make
these materials especially suited for transistor applications. TMDCs are compounds with the general
formula MX2, where M is a transition metal, e.g. Mo and W, and X is an element of the chalcogen
group, S, Se and Te. They appear in a layered structure where the metal forms a hexagonal plane
and the chalcogenides are positioned over and under this plane in either a trigonal prismatic (2H), as
shown in Fig. 1(a), or octahedral (1T) stacking configuration.7 In the semiconducting 2H systems,
the compounds show a transition from indirect band gap in bulk materials to direct band gap in single
layers.8
Single and few-layers TMDCs have been implemented in a wide range of applications, ranging
from thin film transistors,9 digital electronics and opto-electronics,2,10,11 flexible electronics,12 and
up to energy conversion and storage devices.13 However, the defect states in TMDCs have an ambiva-
lent nature and can have a major positive or negative impact on the performance of atomically-thin
devices. The presence of defects in photodetectors can be beneficial since it has been shown to immo-
bilize charges at the channel which improves the gain in photodetectors14 and produces non-volatile
memory mechanisms.15 On the other hand, large hysteresis caused, for example, by charge traps2
and significant Schottky barriers16 at the metal-semiconductor interface are still a major design chal-
lenge for the realisation of novel device architectures. They have been shown to cause degradation
in the performance of transistors17 and generate high levels of flicker noise.18,19 To overcome these
challenges, hysteresis is usually avoided by encapsulation20,21 or operation under high-vacuum.22,23
Most of the current research into surface states of TMDCs has focused on the chemical origins
of charge trapping. A full understanding of their effect on the electrical properties is still lacking,
hindering the optimization of functional components. While hysteresis has been shown to correlate
with traps generated at the channel-dielectric interface and the channel-ambient interface,24,25 little
2
attention has been given to the mechanisms by which immobile charges affect the conduction charac-
teristics of the devices, which is fundamentally different from those experienced in bulk devices.
In this communication we present the first study of the role of immobile charges on the electrical
transport properties of atomically thin MoTe2. This TMDC is of particular interest since its direct
band gap of 1eV26,27 matches the wavelength of maximal solar emission intensity, thus making it a
prime candidate for solar energy converters. MoTe2 is intrinsically p-doped, but can exhibit ambipolar
behavior,26,28 mobility in the range of 10 -- 30 cm2 V−1s−1,26,29 and on-off ratios of up to 106.29
A stringent quantitative analysis demonstrates that the role of trapped charges in the operation of
MoTe2-based electronic components is a change in the threshold voltage of the field-effect transistor
(FET), effectively modulating the resistivity of the entire channel. By repeating the charge capture and
emission cycles in different drain biases we are able to distinguish between two sources of transient
behavior in MoTe2-FETs. One transient is due to emission of charges from traps to the channel,
and the other is due to time-dependent capacitive gating of the channel that produces a transient
in the effective threshold voltage. Finally, we present a complete analytical model to support our
observations. Our findings are applicable to the entire class of atomically thin-based devices and
provide a thorough understanding of charge traps and carrier dynamics which is needed to facilitate
the intelligent design of fast and highly efficient opto-electronic devices.
Few-layers MoTe2 flakes were obtained by mechanical exfoliation of 2H-MoTe2 bulk crystal (HQ
graphene) onto highly doped silicon substrates, covered with 290 nm of high-quality thermally grown
SiO2. The silicon substrate was used as a global back gate electrode, with the oxide layer acting as
a gate dielectric. Standard electron beam lithography procedure was used to pattern electrodes and
electrical leads. The contacts were then immediately metalized with 5 nm of Ti adhesion layer, and
50 nm of Au, using an electron beam evaporation system, working at very low pressure (∼ 10−8
mbar) and at long working distance, to achieve high uniformity in the deposition. The devices were
then annealed in dry Ar/H2 environment at ambient pressure for 2 hours at 200◦C. Fig. 1(b) shows a
3
Figure 1: Panel (a) shows a three dimensional model of the 2H-MoTe2 crystal structure, with a single
layer of the trigonal prismatic stack. Panel (b) shows the schematics of the device architecture and
measurement setup. Panel (c) is atomic force microscope image of a typical device, showing the
source and drain symmetric electrodes and the MoTe2 flake (outlined in dashed white line). The inset
shows a scan profile (taken along the yellow line) from the substrate to the flake.
schematic representation, not to scale, of the device and the circuit details. Atomic force microscopy
measurements (Fig. 1(c)), and optical contrast (not shown here) of the flakes confirm that the surface
of MoTe2 is not visibly contaminated and that the studied flakes consists of 4 number of layers.
Low noise electrical measurements were performed in a home-built Farady cage in the dark and
in ambient conditions on more than five different devices, all showing a similar behavior. The drain
electrode was biased using a low noise voltage source and the source electrode was kept grounded
throughout the experiment. The current flowing through the source electrode was measured using a
current preamplifier. An independent voltage source-meter was used to apply a bias to the gate elec-
trode while measuring the leakage current. The response time of the system was found to be limited
only by the minimal rise time of the preamplifier, which is < 5µs. (See Supporting Information)
The electronic behavior of multiple devices was characterized by measuring their drain current vs.
4
voltage response (Ids-Vds) and drain current vs. gate voltage transfer (Ids-Vgs) characteristics. Figure
2(a) shows the response curve of a typical MoTe2 transistor. The curve exhibits a slight asymmetry
with higher resistivity for negative applied drain bias, indicating that the metal-semiconductor con-
tacts form a small Schottky barrier for holes. The origin of this asymmetry about Vds = 0V is in the
different electrostatic potential seen by the source and drain electrodes. In the experiment the poten-
tial barrier at the MoTe2/source electrode interface is kept constant, as it is pinned by the gate. On
the other hand, the biased drain barrier decreases (increases) in height with positive (negative) drain
bias.30 Despite the low Schottky barrier, both the linear and the log-scale of the response curve (inset
in Fig 2(a)) show that the device is not rectifying and is, in fact, largely Ohmic in higher Vds values
(see Supporting Information).
The device transfer characteristics are shown in Fig. 2(b), taken at Vds = 1V. The curve matches
the expected behavior of an enhancement-mode p-channel transistor, showing an increase in drain cur-
rent as the gate bias grows more negative beyond the threshold voltage (Vth). From the transfer curve,
we can estimate the device mobility, µp, and sub-threshold swing, SS. Using µp = L(dIds/dVgs)/(WCoxVds)
in the linear regime of the curve, where L = 1µm and W = 3µm are the device length and width, re-
spectively, and Cox = ε0εr/d = 115µF m−2 is the gate dielectric capacitance, with ε0 the vacuum
permittivity and εr the oxide relative permittivity, we find that the mobility is between 0.12 on the
forward sweep and 0.14 cm2V−1s−1 on the back sweep. From the sub-threshold part of the curve, we
estimate a sub-threshold swing value of 4 V dec−1 using SS =(cid:0)d log10 Id/dVg
(cid:1)−1. The low value of
the mobility and the high value of the swing are indicative of the presence of mid-gap trap states.14.
In line with these findings, the gate sweep measurements also show a hysteretic behavior resulting
in a shift in Vth between the forward and backward sweeps, which changes the threshold voltage by
about ∆Vth = −4V and the charge neutrality point by about −6V, see Fig. 2(b).
To understand the physical origin of the observed changes in threshold voltage we use the well-
5
Figure 2: Panel (a) shows the response (Ids-Vds) curve of a typical field effect transistor, taken with
zero gate bias (Vgs = 0). The inset shows the same curve in a semi-logarithmic scale. Panel (b) shows
the transfer (Ids-Vgs) curve of the same device taken with 1 V source drain bias (Vds) shown in a linear
(solid black) and semi-logarithmic (solid red) scale. The dashed red lines are a linear extrapolation
of the linear part of the curve, showing a change of 4 V in threshold voltage. The dashed black lines
indicate the change in the position of the charge neutrality point. The arrows indicate the back gate
sweep direction. Panels (c) and (d) show schematic energy band diagrams for the emission (c) and
capture process (d) when the channel is in the "off state" and "on state", respectively. EC, EV , EF,
ET 1 and ET 2 are the conduction band minimum, the valance band maximum, the Fermi energy, the
shallow midgap state and deep midgap state energy, respectively.
6
(a)(b)(c)(d)~6V(0)(0)ECET2EFEVET1(+)(+)ECET2EFEVET1"O(cid:31) State" (Vg>Vth)"On State" (Vg<Vth)~4V known equation that describes Vth in field-effect transistors:
− QT
Cox
Vth = ΦMS − Qi
Cox
− ∆EF
(1)
where ΦMS is the difference between the metal and semiconductor workfunctions when all the ter-
minals are grounded, Cox is the gate dielectric capacitance, Qi is the static charge density within the
dielectric, QT is the trapped charge density at the interface between the dielectric and the conductive
channel and ∆EF is the shift in the Fermi Energy, required to turn the transistor on. From Eq. 1 it is
clear that the only parameter that can change during the back gate sweep is the population of midgap
traps, QT , indicating that positive charges (holes) are immobilized during the sweep. The process
of charge trapping is illustrated in the energy band diagrams of Fig. 2(c+d) using two "donor-type"
mid-gap states. In the "off state", where the Fermi level is above the trap levels (ET 1 and ET 2) the
traps are occupied by an electron and are neutral. In the "on state", the traps are void of electrons
(occupied by a hole) and are positively charged.
A priori, the observed hysteresis can be due to charge trapping in the metal-semiconductor in-
terface, i.e. localized at the contacts region, or at the entire surface area of the channel, i.e. at the
semiconductor-dielectric and -ambient interface. However, the changes in the transfer curve strongly
suggest that most of the charge trapping occurs throughout the entire area of the conductive channel,
rather than at the metal-semiconductor interface. The noticeable shift in the charge neutrality point
with respect to the gate bias (minimal conductivity in the log-scale, red curve) in Fig. 2(b), is indica-
tive of a change in effective doping of the channel due to the space charge region generated by the
immobilized charges. In contrast, a change in the degree of Fermi-level pinning at the contacts would
have manifested primarily in changes in the linear slope of the logarithmic curve (the sub-threshold
slope) and by changes in the width of the neutrality point. Assuming that the trapped charges are
distributed in the channel, an assumption that is further validated by the analysis of the threshold tran-
sients, we can estimate that the difference in trapped charge density between the forward and back
sweep is about 4.3× 1011cm−2, using ∆QT = ∆VCox.
7
To gain insight on the dynamics of the charge traps, their effect on the transfer currents and their
role in producing hysteretic cycles, we have monitored the transport characteristics while pulsing the
gate electrode from "open" (more negative) to a "close" (more positive) value. The drain current was
recorded over long periods of time (60-90 minutes) while the gate was repeatedly pulsed between
Vgs = −10V to open the channel and Vgs = 0V to close it (Top panel in Fig. 3(a)). As the pulse on
gate drives the channel from a close to an open state, a sudden rise of the current in the channel is
measured followed by a fast decay. When the gate is pulsed back to the closed state, the current drops
down and then slowly begins to recover. The decay in current in the open state is due to the capturing
of holes in mid-gap traps that shifts the threshold voltage to a more negative value (red arrows in Fig.
2(d)), effectively closing the channel. On the other hand, the recovery in the off state is due to the
holes that are emitted from the traps (blue arrow in Fig. 2(c)) shifting Vth to a less negative value.
While the capture process is spontaneous and fast, the emission mechanism is thermally activated
and, therefore, significantly slower then the capture rates.
The vast majority of models used to quantify the time-dependent behavior of charge emission from
mid-gap traps are based on Schottky or asymmetric diode structures.31,32 These models accurately
describe the currents, and the resulting transient changes in capacitance, that are associated solely
with the emission of charges from traps back into the circuit. However, transient changes in threshold
voltage should affect the measured current in a completely different way, which has not yet been
studied though it plays a pivotal role for the development of fast opto-electronic applications.
To elucidate the fundamental difference in transient behaviors, we must first describe the main
aspects of the conventional semiconductor model for current transients. When the emission of charges
from depletion regions takes place, the current has a constant (saturation) component, which is a
function of the applied bias, and a transient component which is the emission current:
I(t) = I0 +
qNT A
τ
e−t/τ
8
(2)
Figure 3: Panel (a) shows the gate pulse cycles. The "On" and "Off" segments are highlighted. On the
top, the applied gate voltage during each segment. On the bottom Panel: The drain current during the
capture (on red background) and emission (on white background) segments. (b) An emission segment,
recorded at Vgs = 0V and Vds = 1V , averaged over four cycles. The black circles are the measured
data and the red curve is the fit to a double-exponential rise equation. (c) Emission segments, recorded
at Vgs = 0V and varying Vds values, from 0.2V to 1.0V in 0.2V intervals. The circles are the measured
data and the solid curves are the double-exponential fits. (d) The pre-exponential coefficients for the
short emission coefficients, A1 (Top Panel) and long emission coefficient A2. The red line represents
the best linear fit. Inset: An equivalent circuit diagram of the transient threshold model proposed here.
9
I0 is the saturation current, q is the elementary charge and A is the surface area of the device contact.
Within this model, the time dependence of the transient current is a function of the density of trapped
charges (NT ) and the decay coefficient τ which is a function of the energetic position of the trap with
respect to the valance band.(see supporting information). However, in atomically thin MoTe2 FET,
the high sensitivity of the conducting channel to its surrounding media means that the charge carrier
dynamics can lead to significant shifts in threshold voltage and charge neutrality point, effectively
changing the resistance of the entire channel. Hence, an inclusive model in which the resistivity
changes with time is needed. To this end, we use the well known expression that describes the linear
regime of the transfer curve, where the current is determined by:33
(cid:0)Vth(t)− Vg
(cid:1)Vd
Id(t) =
W µpCox
L
(3)
Where W and L is the channel width and length, respectively, and µp is the hole mobility. Since
in atomically-thin FETs, the only time-dependent component of the threshold voltage (Eq. 1) is the
density of trapped charges we can write dVth(t)/dt = −(q/Cox) (d pT (t)/dt) where pT = QT /q is
the density of occupied traps. To obtain a full description of the threshold voltage transient, Vth(t),
we assume that the density of free carriers, p, directly correlates to the equilibrium density p0, by
p = p0 − pT , i.e.
that there is no net injection of charges through the contacts. We further use
the well-known result of the Shockley-Reed-Hall derivation to write the time-dependent density of
occupied traps as pT (t) = NT e−t/τ. The transient of the threshold voltage then becomes:
Vth(t) = Vth,sat − qNT e−t/τ
Cox
(4)
where all the time-independent quantities have been grouped in Vth,sat for convenience. With the
expression for Vth(t) from Eq. 4, the expression for the transient current is readily obtained:
Id(t) = Id,sat − qW µpNT Vd
L
e−t/τ .
(5)
The expression in Eq. 5 has one striking difference from the conventional expression for current
transient (Eq. 2), it is linear with drain bias. Qualitatively, this is a simple manifestation of Ohm's
10
law: as the resistance of the conductive channel changes with time, the current responds linearly,
proportional to the applied bias.
In the emission segments of the gate-pulse experiment, we find that a significant increase in cur-
rents occurs on a very short time scales, while a further, slower increase is easily discernible in longer
time scales. This behaviour cannot be satisfied by a single exponential fit but is in excellent agree-
ment with adouble exponential rise equation in the form I(t) = I0 + A1e−t/τ1 + A2e−t/τ2 (red line in
Fig. 3(a)) suggesting that there are two types of traps25, a shallow trap and a deeper one, corre-
sponding to emission coefficients τ1 ≈ 250s and τ2 ≈ 2,900s. Fig. 3(b) shows the recovery currents,
measured by pulsing the gate between -10 V and 0 V at drain bias values ranging from 0.2 V to 1 V.
The curves are then fitted with a double exponential rise curve, without any assumption on the form
of the pre-exponential factors, A1 and A2, while maintaining the emission constants within reasonable
boundaries.
To distinguish between the different contributions to the transient current, the pre-exponential
factors of the shallow and deep traps are plotted in Fig. 3(d) on the top and bottom panel, respectively.
Within the measurement error, it is clear that the pre-exponential factor of the transient current that is
due to emission from the shallow traps is constant, and independent of the drain bias. This suggests
that the measured signal is, indeed, the emission current from the traps. For the deep traps, the pre-
exponential factors are found to have a linear dependence on Vds. This is expected for deep traps
that are uniformly distributed about the conductive channel and are not simply concentrated at the
metal-semiconductor interface, and is consistent with the analysis of the hysteresis of the gate bias
measurements. Comparing the two panels in Fig. 3(d) reveals two striking features in the transient
mechanism. First, the two orders of magnitude difference in the pre-exponential coefficients show that
the threshold transient is the significant factor, governing the transistor response over time. Second,
the change in the trap population (∆NT = L(dA2/dVd)/(qW µp) ∼ 109 cm−2) is a small fraction of
the overall estimated density of 1012 states per cm2,34 corresponding to the small dynamic window
11
of operation used here. This emphasizes the significant role that the threshold voltage transients play
in the behavior of atomically thin MoTe2 transistors.
The presented model of the threshold voltage transients is general, since it does not take into
account features which are specific to MoTe2. For example, similar studies conducted on WS2 grown
by chemical vapor deposition also show a bi-exponential decays of the transient current which is fully
captured by our model (see Supporting Information).Most importantly, this model is independent of
the spatial location of trapped charge states (e.g. semiconductor-substrate or -ambient interface) and it
is universally valid for semiconductor channels thickness that are significantly smaller than the Debye
screening length, a condition easily met in emerging atomically thin materials. Our proposed model
of threshold voltage transients can be further expanded and included in well established methodology
of charge trap spectroscopy, whether probed by temperature scans35 or by optical means.36 However,
the added simplicity of our methodology means that it can be applied to a variety of materials and
substrates, including those that are photo-active, or temperature sensitive.
Finally, we calculate the overall resistance of the device and find that the transient resistance
operates in parallel to the saturation resistance:
(cid:18)dId,sat(t)
dVd
(cid:19)
− qW µpNT
L
e−t/τ
(6)
(cid:18)dId(t)
(cid:19)
dVd
=
or R−1 = R−1
sat + R−1
trans which is a strong indication to the fact that both factors indeed stem from
the channel itself. We note that the addition of series resistance to the circuit, such as contact resis-
tance, does not affect the time-dependent characteristics of the model, as is discussed in details in the
Supporting Information.
In conclusion, we have demonstrated a new approach to the analysis of charge trapping and tran-
sient response of TMDC-based FETs, which paves the way to a better understanding of the role of
mid-gap state in the operation novel devices. Using a simple two terminal model system, we were
able to distinguish between currents associated with the emission of trapped charges into the circuit
12
and currents that evolve in time due to the changes in effective threshold voltage across the channel.
The mechanism of threshold voltage transients which we study and model is not limited to MoTe2
but it is valid to any device based on atomically thin materials. Indeed, as long as the channel depth
is much smaller than the Debye screening length, the threshold voltage will be strongly modulated by
the formation of space charge regions at both the semiconductor-dielectric and -ambient interfaces.
Our model, which describes the basic physics that govern the hysteretic characteristics of atomically
thin FETs, is instrumental for the design of defect-based devices, such as photodetectors and memory
devices, as well as provides a new methodology to study the nature of these defects.
Acknowledgments
Iddo Amit acknowledges financial support from The European Commission Marie Curie In-
dividual Fellowships (Grant number 701704). S. Russo and M.F. Craciun acknowledge financial
support from EPSRC (Grant no. EP/J000396/1, EP/K017160/1, EP/K010050/1, EP/G036101/1,
EP/M001024/1, EP/M002438/1), from Royal Society international Exchanges Scheme 2016/R1 and
from The Leverhulme trust (grant title "Quantum Drums" and "Room temperature quantum electron-
ics"). N.J. Townsend and S. Russo acknowledge DSTL grant scheme Sensing and Navigation using
quantum 2.0 technologies. C.M. acknowledges the award of a Royal Society University Research
Fellowship by the UK Royal Society, and the EPSRC-Royal Society Fellowship Engagement Grant
EP/L003481/1.
13
References
[1] A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Nano letters
2010, 10, 1271.
[2] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nature nanotechnology
2012, 7, 699.
[3] H. Chen, H. Liu, Z. Zhang, K. Hu, X. Fang, Advanced Materials 2016, 28, 403.
[4] F. Xia, H. Wang, D. Xiao, M. Dubey, A. Ramasubramaniam, Nature Photonics 2014, 8, 899.
[5] Q. Tang, Z. Zhou, Progress in Materials Science 2013, 58, 1244.
[6] G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee,
L. Colombo, Nature nanotechnology 2014, 9, 768.
[7] R. Lv, J. A. Robinson, R. E. Schaak, D. Sun, Y. Sun, T. E. Mallouk, M. Terrones, Accounts of
chemical research 2014, 48, 56.
[8] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Physical Review Letters 2010, 105, 136805.
[9] S. Das, R. Gulotty, A. V. Sumant, A. Roelofs, Nano letters 2014, 14, 2861.
[10] D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, M. C. Hersam, ACS nano 2014, 8, 1102.
[11] S. Das, M. Dubey, A. Roelofs, Applied Physics Letters 2014, 105, 083511.
[12] D. Akinwande, N. Petrone, J. Hone, Nature communications 2014, 5.
[13] H. Wang, H. Feng, J. Li, Small 2014, 10, 2165.
[14] M. M. Furchi, D. K. Polyushkin, A. Pospischil, T. Mueller, Nano letters 2014, 14, 6165.
[15] H. S. Lee, S.-W. Min, M. K. Park, Y. T. Lee, P. J. Jeon, J. H. Kim, S. Ryu, S. Im, Small 2012, 8,
3111.
14
[16] A. Allain, J. Kang, K. Banerjee, A. Kis, Nature Materials 2015, 14, 1195.
[17] J. Pu, K. Funahashi, C.-H. Chen, M.-Y. Li, L.-J. Li, T. Takenobu, Advanced Materials 2016, 28,
4111.
[18] I.-T. Cho, J. I. Kim, Y. Hong, J. Roh, H. Shin, G. W. Baek, C. Lee, B. H. Hong, S. H. Jin, J.-H.
Lee, Applied Physics Letters 2015, 106, 023504.
[19] I.-T. Cho, W.-M. Kang, J. Roh, C. Lee, S. H. Jin, J.-H. Lee, in 2015 IEEE 22nd International
Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE, 2015 pp. 480 --
483.
[20] G.-H. Lee, Y.-J. Yu, X. Cui, N. Petrone, C.-H. Lee, M. S. Choi, D.-Y. Lee, C. Lee, W. J. Yoo,
K. Watanabe, et al., ACS nano 2013, 7, 7931.
[21] D. Kufer, G. Konstantatos, Nano letters 2015, 15, 7307.
[22] D. Jariwala, V. K. Sangwan, D. J. Late, J. E. Johns, V. P. Dravid, T. J. Marks, L. J. Lauhon, M. C.
Hersam, Applied Physics Letters 2013, 102, 173107.
[23] V. K. Sangwan, H. N. Arnold, D. Jariwala, T. J. Marks, L. J. Lauhon, M. C. Hersam, Nano
letters 2013, 13, 4351.
[24] Y. Park, H. W. Baac, J. Heo, G. Yoo, Applied Physics Letters 2016, 108, 083102.
[25] D. J. Late, B. Liu, H. R. Matte, V. P. Dravid, C. Rao, Acs Nano 2012, 6, 5635.
[26] I. G. Lezama, A. Ubaldini, M. Longobardi, E. Giannini, C. Renner, A. B. Kuzmenko, A. F.
Morpurgo, 2D Materials 2014, 1, 021002.
[27] I. G. Lezama, A. Arora, A. Ubaldini, C. Barreteau, E. Giannini, M. Potemski, A. F. Morpurgo,
Nano letters 2015, 15, 2336.
15
[28] H. Xu, S. Fathipour, E. W. Kinder, A. C. Seabaugh, S. K. Fullerton-Shirey, ACS nano 2015, 9,
4900.
[29] N. R. Pradhan, D. Rhodes, S. Feng, Y. Xin, S. Memaran, B.-H. Moon, H. Terrones, M. Terrones,
L. Balicas, ACS nano 2014, 8, 5911.
[30] H. Tian, Z. Tan, C. Wu, X. Wang, M. A. Mohammad, D. Xie, Y. Yang, J. Wang, L.-J. Li, J. Xu,
et al., Scientific reports 2014, 4.
[31] D. Lang, Journal of Applied Physics 1974, 45, 3023.
[32] J. Borsuk, R. Swanson, IEEE Transactions on Electron Devices 1980, 27, 2217.
[33] S. M. Sze, K. K. Ng, Physics of semiconductor devices, John wiley & sons, 2006.
[34] Y.-F. Lin, Y. Xu, C.-Y. Lin, Y.-W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi,
Advanced Materials 2015, 27, 6612.
[35] C. Chen, K. Abe, H. Kumomi, J. Kanicki, IEEE Transactions on Electron Devices 2009, 56,
1177.
[36] K. Lee, M. S. Oh, S.-j. Mun, K. H. Lee, T. W. Ha, J. H. Kim, S.-H. K. Park, C.-S. Hwang, B. H.
Lee, M. M. Sung, et al., Advanced Materials 2010, 22, 3260.
16
Supporting Information:
Transient Threshold Voltage in Atomically Thin
MoTe2 Transistors
Iddo Amit1, Tobias J. Octon2, Nicola J. Townsend1, Francesco Reale3, C. David Wright2, Cecilia
Mattevi3, Monica F. Craciun2 and Saverio Russo1†
1Centre for Graphene Science, Department of Physics, University of Exeter, Stocker Road, Exeter,
2Centre for Graphene Science, Department of Engineering, University of Exeter, North Park Road,
United Kingdom, EX4 4QL
Exeter, United Kingdom, EX4 4QF
3Department of Materials, Imperial College London, United Kingdom, SW7 2AZ
†S.Russo@exeter.ac.uk
Contents
Additional Results
18
MoTe2 transfer and transient curves
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Threshold voltage transients in WS2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Response Time of the setup
Detailed Derivation of the Threshold Transient Model
21
22
17
Additional Results
MoTe2 transfer and transient curves
The transfer curves, Ids-Vgs of two additional devices are shown in Fig. S1(a) and (b). The curves
show that different devices, with different resistance and quantitative gate responses show a similar
qualitative behavior. For the device shown in Fig. S1(a), the mobility is 0.04 cm2 V−1s−1 and
the sub-threshold swing is ∼ 13 V dec−1, whereas the device in Fig. S1(b) has a mobility of 0.15
cm2 V−1s−1 and subthreshold swing value similar to the former device. Strikingly, given the large
variation in quantitative properties, the trend in behavior, both in the transfer curves and the transient
curves (Fig. S2) remains similar in all devices, which is a strong indication to the validity of the
proposed model.
Figure S1: Two additional transfer (Ids-Vgs) curves of MoTe2 devices. The black curves are shown
on a linear scale and the red curves on a semi-logarithmic scale. Arrows indicate the sweep direction
The transient response to gate pulses was measured on several devices, with different pulse
heights. Here we show an analysis done on three additional devices. The results shown in Fig.
S1(a) and (d) were collected by pulsing the gate between Vgs = −10 V ("open") and Vgs = −5 V
18
-40-200204002040Drain Current (nA)Gate Bias (V)10-1310-1210-1110-1010-910-8Drain Current (A)-40-2002040012345Drain Current (nA)Gate Bias (V)10-1210-1110-1010-910-8Drain Current (A)(a)(b) ("close"). The results shown for the next two devices were collected using the same dynamic window
of ∆Vgs = 10 V, as the device discussed in the main text, and the gate was pulsed between Vgs = −20
V ("open") and Vgs = −10 V ("close"). The transfer properties of all the MoTe2 transistors are
qualitatively comparable.
The transient curves shown in Fig. S1 (a) have a slower rise in the lower values of Vds. Indeed,
the pre-exponential decay factor of the deep traps, A2 are constant up to Vds = 0.4 V and sub-linear
up until Vds = 0.6 V. This result is attributed to the high conductivity of the channel at Vgs = −5
V and the low drift velocity across the channel at Vds ≤ 0.6 V. In this combination of parameters
the magnitude of the emission current is comparable or larger than the drift current in the channel
and, therefore, is the dominant current in the system. However, as the drift velocity increases with
increased Vds, the threshold voltage transient becomes more dominant, as is evident from the linear
dependence of the pre-exponential decay factor in Vds.
In contrast, the transient curves shown in Fig. S1 (b) and (c) are of devices with higher resistivity
than that of the device discussed in the main text, as is evident from the lower currents. While in these
devices, the linear trend (Fig. S1 (e) and (f)) is visible from Vds = 0.2 V onwards, the shape of the
transient curves in Fig S1 (b) is quite different from those of the other reported devices. From the
analysis, we find that the emission currents from the shallow traps happen at time constants, τ1 ≈ 0.4
s, much smaller than the other reported devices, where τ1 is in the order of a few tens of seconds.
We can, therefore, conclude that in this device, the contribution of the emission currents from the
shallow traps were negligible, eliminating the initial (fast) recovery, and thus changing the shape of
the transient curves.
19
Figure S2: (a) -- (c) Current recovery segments, for three different devices, recorded at Vgs = −5 V
(panel (a)) and Vgs = −10 V (panels (b) and (c)) and varying Vds values, from 0.2V to 1.0V in
0.2V intervals. The circles are the measured data and the solid curves are the double-exponential fits.
(d) -- (f) The pre-exponential coefficients for the short emission coefficients, A1 (Top Panel) and long
emission coefficient A2. Fig S1(d) includes results from Vds values that are not shown in (a). The red
line represents the best linear fit.
Threshold voltage transients in WS2
The mechanism of threshold voltage transient changes to the conduction of the channel is not
limited to devices with high density of trap states. To illustrate the generality of the model, we
present some of the threshold voltage transients measured in a CVD grown bilayer WS2 transistor,
which was in-situ annealed and measured in vacuum (< 2× 10−7 mbar)
The transfer curve in Fig S3 (a) shows that in the WS2 transistors, the hysteresis is significantly
lower than that found in the MoTe2. The transient curves and emission coefficients measurements for
20
Figure S3: (a) Transfer curves (Ids-Vgs) of a CVD-grown WS2 transistor in the linear (black) and
semi-logarithmic (red) scales. (b) Current recovery segments recorded at Vgs = 10 V and varying Vds
values, from 0.2V to 1.0V in 0.2V intervals. The circles are the measured data and the solid curves are
the double-exponential fits. (c) The pre-exponential coefficients for the short emission coefficients,
A1 (Top Panel) and long emission coefficient A2. The solid lines represent the best linear fit.
WS2 clearly show that the same mechanism of time dependent resistance governs the behavior of the
charge conduction in the channel, see Fig. S3 (b) and (c), respectively. Even though the charge carrier
mobility in WS2 is more than 100 times larger than that in the studied MoTe2, we still find that both
the short lived and the long lived traps contribute to the modulation of channel resistance.
Response Time of the setup
To ensure that the measured results are not an artefact of the measurement, the response time of
the set-up was measured by pulsing the gate source unit and recording the current through a resistor
of comparable resistance to that of the channel (∼ 1 GΩ). The rise time of the current was found
to be less than 2 µs, corresponding to the rise time of the current preamplifier. The current follows
an exponential rise equation with a rise coefficient τ = 0.22 µs, thus ensuring that the time response
measured o the atomically thin MoTe2 is solely due to the carrier dynamics in the device. Fig. S3
21
Figure S4: The rise time of the set-up, recorded using a 1 GΩ resistor
shows the measured rise time of the current.
Detailed Derivation of the Threshold Transient Model
Classical Current Transient Theory To allow for a thorough discussion of the difference between
the classical model of transient currents and the newly presented model which accurately describes
the carrier dynamics in atomically thin MoTe2-FETs, we must first present the main aspects of the
classical current transients theory. We present an analysis for the process of capturing holes near the
valance band maximum (EV ), as this is the relevant process for p-doped MoTe2.
The rate of capturing holes from the valance band (Rhc) is proportional to the density of holes in
the valance band (p) and the density of unoccupied traps (NT − pT ), where NT is the total density of
trapping states and pT is the density of occupied states. It's important to note here that "unoccupied"
22
0.00.40.81.21.62.0-6.0-5.8-5.6-5.4-5.2-5.0Voltage (V)Time (µs)y=y0+A exp(-t/τ)τ = 0.22 µsRise Time < 2µs from holes means occupied by electrons and electrically neutral.
= −cp(NT − pT )p
(7)
(cid:12)(cid:12)(cid:12)(cid:12)capture
Rhc ≡ ∂ p
∂t
Where cp is the capture coefficient for holes, and it equals the thermal velocity, vth, multiplied by the
capture cross section, σp.
The emission of holes from the traps is described using same considerations without taking into
account the unoccupied states in the valance band, since it is assumed that for a non-degenerate
semiconductor the emission rate is not limited by it.
(cid:12)(cid:12)(cid:12)(cid:12)emission
Rhe ≡ ∂ p
∂t
= eppT
(8)
Where ep is the emission rate of holes from traps to the valance band. It is therefore clear, that the
total change in trap occupation is given by:
(cid:12)(cid:12)(cid:12)(cid:12)capture
Rp =
∂ p
∂t
(cid:12)(cid:12)(cid:12)(cid:12)emission
= eppT − cp(NT − pT )p
+
∂ p
∂t
With the traps saturated we can write NT = pT and the capture rate will become zero.
Rp =
∂ p
∂t = eppT
(9)
(10)
In a simple process where every hole added to the valance band is removed from a trap (i.e. without
any further charge injection), it is clear that:
Combining Eq. 11 with Eq. 10 yields
∂ p
∂t +
∂ pT
∂t = 0
pT = pT (0)e−t/τ
(11)
(12)
Where τ = 1/ep is the decay constant per trap, and pT (0) = NT is the trap occupation at the saturation
point.
23
In the classical case, where the entire contribution to the current transient is from charges that are
emitted from the traps back into the circuit, the current transient is given by I(t) = I0 + qRpA, Where
I0 is the steady state current, and A is the area from which charges are emitted. Using Eq. 12, one can
write an explicit expression for the current transient
I(t) = I0 +
qNT A
τ
e−t/τ
(13)
Derivation of the Threshold Voltage Transient For time-dependent currents that stem from evo-
lution of the threshold voltage in the field-effect transistor (FET), there are a few parameters that
determine the current transient. First, the current equation for an FET in the linear regime is
(cid:0)Vth(t)− Vg
(cid:1)Vd
Id(t) =
W µpCox
L
(14)
Where Id is the drain current, W and L are the channel width and length, respectively, µp is the mo-
bility of the holes, Cox is the capacitance of the gate dielectric, and Vth and Vg are the FET threshold
voltage for conduction and the gate bias, respectively. The threshold voltage is given by
Vth(t) = ΦMS − QT (t)
Cox
− ∆EF
(15)
Where ΦMS is the difference in workfunction between the gate electrode and the conduction channel
and QT (t) = (Q0 + qpT (t)) accounts for both the stationary charges in the oxide (Q0) and the dynamic
charges that are trapped and de-trapped on the channel. It is important to note here that in contrast to
a conventional inversion-based FET, the MoTe2 is an accumulation-based transistor. Therefore, the
"textbook" 2φF expression for strong inversion has been substituted here for a general ∆EF which
represent the change in Fermi energy required to "open" the channel. From this equation, one can
easily write an expression to describe the dynamics of the threshold voltage
Using a simple model for the concentration of free charge carriers p(t) =(cid:0)Cox(Vth(t)− Vg)(cid:1) /q, it's
dt
(16)
dVth(t)
dt = − q
Cox
d pT (t)
easy to see that charge is conserved in this model, p = p0 − pT , where p0 is the total density of
24
holes in the valance band in equilibrium conditions and without traps, and is constant. Using the
previously found expression for the emission rate, we can now write an expression for the time-
dependent threshold voltage
Vth = ΦMS − Q0
Cox
− qNT e−t/τ
Cox
− ∆EF = Vth,sat − qNT e−t/τ
Cox
(17)
Where on the right hand side, all the terms that are time-independent were grouped together into
Vth,sat The current then becomes
(cid:32)
Vth,sat − qNT e−t/τ
Cox
(cid:33)
− Vg
Vd = Id,sat − qW µpNT Vd
L
e−t/τ
(18)
Id(t) =
W µpCox
L
Finally, to account for the case where the a resistance in series (e.g., contact resistance) plays an
important role in the device performance, we add a constant resistance term, RS to Eq. 14:
From this equation, we can easily isolate the current term:
(cid:1) (Vd − IdRS)
(cid:0)Vth(t)− Vg
(cid:1)
(cid:0)Vth(t)− Vg
(cid:1)RS
(cid:0)Vth(t)− Vg
Vd
Id(t) =
W µpCox
L
Id(t) =
1 +
W µpCox
W µpCox
L
L
(19)
(20)
S
Which is still linear with Vd, in accordance with Ohm's law. The importance of this result is clear
when we examine the limits where the contact resistance is much larger than the channel resistance,
. In this limit, the current simply reduces to Id = VdR−1
i.e., when RS (cid:29)(cid:16)W µpCox
which is time-independent. On the other limit, RS (cid:28)(cid:16)W µpCox
(cid:0)Vth(t)− Vg
(cid:0)Vth(t)− Vg
, Eq. 20 simply
(cid:1)(cid:17)−1
(cid:1)(cid:17)−1
L
L
reduces back to Eq. 14. The dominant time-dependent characteristics of the emission currents are
therefore a strong indication that the major contribution to the transient profile stems from the time-
dependent changes in the channel resistance.
25
|
1612.07410 | 2 | 1612 | 2017-07-31T15:21:38 | Fractional spin and Josephson effect in time-reversal-invariant topological superconductors | [
"cond-mat.mes-hall"
] | Time reversal invariant topological superconducting (TRITOPS) wires are known to host a fractional spin hbar/4 at their ends. We investigate how this fractional spin affects the Josephson current in a TRITOPS-quantum dot-TRITOPS Josephson junction, describing the wire in a model which can be tuned between a topological and a nontopological phase. We compute the equilibrium Josephson current of the full model by continuous-time Monte Carlo simulations and interpret the results within an effective low-energy theory. We show that in the topological phase, the 0-to-pi transition is quenched via formation of a spin singlet from the quantum dot spin and the fractional spins associated with the two adjacent topological superconductors. | cond-mat.mes-hall | cond-mat | Fractional spin and Josephson effect in time-reversal-invariant topological
superconductors
Alberto Camjayi,1 Liliana Arrachea,2 Armando Aligia,3 and Felix von Oppen4
1Departamento de F´ısica, FCEyN, Universidad de Buenos Aires and IFIBA,
Pabell´on I, Ciudad Universitaria, 1428 CABA Argentina
2International Center for Advanced Studies, ECyT-UNSAM,
Campus Miguelete, 25 de Mayo y Francia, 1650 Buenos Aires, Argentina
3Centro At´omico Bariloche and Instituto Balseiro, CNEA, 8400 S. C. de Bariloche, Argentina
4Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universitat Berlin, 14195 Berlin, Germany
Time reversal invariant topological superconducting (TRITOPS) wires are known to host a frac-
tional spin /4 at their ends. We investigate how this fractional spin affects the Josephson current in
a TRITOPS-quantum dot-TRITOPS Josephson junction, describing the wire in a model which can
be tuned between a topological and a nontopological phase. We compute the equilibrium Joseph-
son current of the full model by continuous-time Monte Carlo simulations and interpret the results
within an effective low-energy theory. We show that in the topological phase, the 0-to-π transition
is quenched via formation of a spin singlet from the quantum dot spin and the fractional spins
associated with the two adjacent topological superconductors.
PACS numbers: 74.78.Na, 74.45.+c, 73.21.La
Introduction.-The interplay of many-body interac-
tions in quantum dots and superconductivity has been
at the focus of interest for some time [1–6]. While elec-
trons are paired in superconductors, the charging energy
effectively suppresses pairing in quantum dots. A promi-
nent consequence of this competition is the transition be-
tween 0 and π junction behavior of the Josephson current
in devices where a quantum dot (QD) connects between
ordinary (nontopological) singlet-superconducting wires
(S-QD-S junction) [7–10]. As a result of numerous stud-
ies [11–19], this phenomenon is now well understood for
conventional superconductors. Essentially, S-QD-S junc-
tions exhibit π-junction behavior when the QD hosts an
effective spin-1/2 degree of freedom.
Here, we address the 0 to π transition for Joseph-
son junctions in which a quantum dot connects be-
tween time-reversal-invariant topological superconduc-
tors (TRITOPS). Unlike their time-reversal-breaking
cousins [2, 20–22], TRITOPS preserve time-reversal sym-
metry and can coexist with an unpolarized quantum-
dot spin.
It is thus an interesting question whether
π-junction behavior can be observed in TRITOPS-QD-
TRITOPS junctions. Such junctions differ from con-
ventional S-QD-S junctions in several ways. First, the
Majorana-Kramers pairs present in the topological phase
allow for the coherent transfer of single electrons, while
the Josephson current of a conventional junction is car-
ried by Cooper pairs.
Even more intriguing, TRI-
TOPS host a fractional /4 spin at their ends. Thus,
a TRITOPS-QD-TRITOPS junction allows one to study
the hybridization of fractional and ordinary spins. We
show that the 0-π transition constitutes a signature which
distinguishes between the topological and the nontopo-
logical phase, and trace the quenching of the transition
for TRITOPS to the formation of a spin singlet from the
quantum-dot spin and the fractional spins of the adjacent
TRITOPS.
In the wake of proposals to engineer time-reversal-
breaking topological phases and corresponding experi-
ments, there has also been substantial interest in time
reversal
invariant topological superconductors (TRIP-
TOPS) [1, 24–26, 28–37]. TRITOPS are characterized
by Kramers pairs of Majorana end states and localized
fractional spins [28]. Time reversal protects the pair of
Majoranas from hybridizing which therefore generically
remain at zero energy. Similarly, the fractional spin is
topologically protected and cannot be determined from a
local measurement without breaking time reversal. Sev-
eral routes have been proposed to engineer TRITOPS al-
though their experimental realization is more demanding
than that of time-reversal-breaking topological supercon-
ductors [36].
Conventional Josephson junctions assume their mini-
mal energy at zero phase difference and their maximal
energy at a phase difference of π (0-junction behavior).
This behavior is reversed in π junctions which assume
their minimal energy at a phase difference of π [1, 2]. In
S-QD-S junctions, π-junction behavior occurs when the
quantum dot forming the junction is singly occupied and
acts effectively as a magnetic impurity. When the QD
is weakly coupled to the superconductors, tunneling of
Cooper pairs between the conventional superconductors
relies on a forth-order cotunneling process [1, 10]. This
process includes a π phase shift which originates from
the Fermi statistics of electrons and becomes manifest in
the π-junction behavior. As a consequence, the current-
phase relation of the junction phase shifts by π when the
occupation of the quantum dot is tuned from even to odd.
When the quantum dot is strongly coupled to the super-
conductors, the impurity spin can be screened, turning
arXiv:1612.07410v2 [cond-mat.mes-hall] 31 Jul 2017
a doublet into a singlet ground state and resulting in 0-
junction behavior. Depending on the parameter regime,
this transition can be described as a result of Kondo cor-
relations or a zero-energy crossing of a Yu-Shiba-Rusinov
state [19].
Model.-Our considerations are based on a time-
reversal-invariant superconductor with Hamiltonian [1]
2
Hα =
N
j=1Xσ (cid:16)−tc†α,j+1,σcα,j,σ + iλσc†α,j+1,σcα,j,σ
X
+∆σeiφα c†α,j+1,σc†α,j,σ + H.c. − µ nα,j,σ(cid:17) ,
(1)
where λ↑,↓ = ±λ, ∆↑,↓ = ±∆ and ↑ =↓, ↓ =↑. More-
over, t is the hopping parameter, µ the chemical poten-
tial, and λ and ∆ are the strengths of Rashba spin-orbit
coupling and extended s-wave pairing, respectively. The
index α = L, R labels the left and right superconductors
of the junction with order parameter phases φα. The
phase difference φ = φL − φR = 2πΦ/Φ0 can be tuned
by including the junction in a superconducting loop and
threading the loop by a magnetic flux Φ. (Φ0 = h/2e
denotes the superconducting flux quantum.) The entire
TRITOPS-QD-TRITOPS Josephson junction is then de-
scribed by the Hamiltonian
Here,
H = Xα=L,R
Hd = εdXσ
Hα + Hc + Hd.
(2)
nd,σ + U nd↑nd↓
(3)
describes the quantum dot with gate-tunable level energy
εd, spin-resolved level occupation nd,σ, and charging en-
ergy U , and
Hc = −t0Xσ h(cid:16)c†L,N,σ + c†R,1,σ(cid:17) dσ + H.c.i
(4)
accounts for the hybridization between quantum dot and
superconductors.
The Hamiltonian Hα supports topological and non-
topological phases. The topological phase occurs when
µ < 2λ and is characterized by Kramers pairs of Ma-
jorana end states. For each lead, the corresponding
Majorana operators can be combined into conventional
fermionic operators
ΓL/R =Z dxϕL/R(x)[ψ↑(x) ∓ iψ†
↓
(x)],
(5)
where ϕL/R(x) denotes the Majorana wavefunctions of
the left (L) and right (R) superconducting lead and ψσ(x)
denotes the electron field operator for spin σ (see Supple-
mentary Material, Sec. 2 [38]). While the Majorana oper-
ators mix the two spin components, the operators ΓL/R
FIG. 1.
(Color online) Top: Josephson current vs φ for a
quantum dot at T = 0 with U = 0, t0 = t, λ = t/2, ∆ =
t/5, and values of µ in the topological (µ < t) as well as
the nontopological (µ > t) phase. The wires have N = 500
sites. Inset: Josephson current at finite temperature. Red,
blue, and green lines correspond to β = 400, 200 and 100,
respectively. The T = 0 case is plotted in black for reference.
Bottom: Spectrum of HBdG for µ = εd = 0 (left), µ = 0,
εd = t (middle), and µ = −εd = 1.8 (right). Other parameters
as in top panel. Energies are measured in units of t = 1.
remove a spin of /2 from one end of the wire. Thus,
ΓL/R and Γ†L/R toggle the the system between ground
states with fractional spins of ±/4 localized at the ends
of the wire [28].
Numerical results.-The Josephson current can be
computed from the Green function expression
I =
2t02
β Xσ Xn
Imhg(12)
1α,σ(iωn)G(21)
(6)
d,σ (iωn)i .
The derivation is included in Ref. [38] (see Sec. 1). The
Green functions correspond to the Matsubara compo-
nents of frequency ωn = (2n + 1)π/β (β is the inverse
temperature) of the imaginary-time Green functions
g(12)
d,σ (τ ) =
1α,σ(τ ) = −hTτhc†α,1,σ(τ )c†α,1,σ(0)ii0 and G(21)
−hTτh dσ(τ ) dσ(0)ii, where h. . .i0 (h. . .i) denotes the en-
semble average over the states of Hα (H). The first Green
function can be obtained exactly.
First consider a junction with a noninteracting quan-
tum dot. For U = 0, the Green function Gd,σ(iωn) and
thus the Josephson current can also be evaluated analyti-
β = 400
β = 200
β = 100
0.1
I
0.05
0
0
0.25
0.75
1
0.5
φ/π
0.1
0.05
I
0
-0.05
-0.1
µ = 0.0
µ = 0.4
µ = 0.8
µ = 1.0
µ = 1.4
µ = 1.8
0
0.5
1
φ/π
1.5
2
0
0.5
1
f/p
1.5
2
0
0.5
1
f/p
1.5
2
0
0.5
1
f/p
1.5
2
0.2
0.1
-0.1
-0.2
0
E0(f)
3
Shiba transformation, mapping H to a particle-number
conserving Hamiltonian with negative U [15]. The Green
function of the transformed problem is then calculated by
the algorithm introduced in Refs. [42, 43]. Inversion of
the Shiba transformation leads to Gd,σ(iωn) which en-
ters the Josephson current (8). Results for a half-filled
configuration (i.e., hnd↑ + nd↓i = 1) are shown in Fig. 2.
The nontopological case (bottom panel) shows the ex-
pected 0 to π transition. When coupling the quantum
dot to superconducting leads, the local moment per-
sists when ∆ is larger than the Kondo temperature TK,
but becomes Kondo screened by the quasiparticle states
for ∆ (cid:28) TK. For a particle-hole symmetric configura-
tion, the Kondo temperature of the junction is given by
kBTK =pδU/2 exp (−πU/8δ) [3] with the hybridization
parameter δ ∼ π(t0)2p1 − µ2/(2t)2/(2t). Consequently,
there is a 0-π transition as U increases. For U = t,
the dot is in the intermediate valence regime, while for
U = 6t and U = 10t, it would be in the Kondo regime
when attached to normal leads. In our case, kBTK ∼ ∆
for U ∼ 8.5t, consistent with the observed transition be-
tween 0- and π-junction behavior between U = 6t and
U = 10t.
It is our central observation that there is no corre-
sponding 0-π transition when the superconducting leads
are in the topological regime. Instead, the current-phase
relation remains similar to the noninteracting case for all
interaction strengths U .
In particular, the abrupt de-
pendence at a phase difference of φ = π, while slightly
smoothed by finite temperature, becomes more pro-
nounced as the number of sites increases, as in the nonin-
teracting case (cp. inset of Fig. 1). These results suggest
that the impurity spin is efficiently screened in the topo-
logical case, despite the presence of the superconducting
gap. This robust screening of the spin of the quantum
dot originates from its interaction with the subgap states
emerging from the Kramers pairs of Majoranas of the
adjacent left and right wires.
Effective Hamiltonian.-To arrive at this conclusion,
we interpret our numerical results in the context of
an effective Hamiltonian. Consider a singly-occupied,
interacting quantum dot coupled to two time-reversal-
invariant topological superconductors. For simplicity, we
assume that the superconducting gap is large compared
to the Kondo temperature so that we can neglect hy-
bridization with the quasiparticle continuum. Then, we
only need to consider the hybridization with the sub-
gap states originating from the Majorana bound states.
We can project out the empty and doubly occupied dot
states by employing a Schrieffer-Wolff transformation [4]
(see also [37] for similar considerations). This yields an
effective Hamiltonian in the eight-dimensional subspace
spanned by the two eigenstates of the quantum dot spin
Sd and the two states for each of the superconducting
leads which are associated with the Kramers pair of Ma-
jorana operators. Here, we sketch the derivation of this
FIG. 2. (Color online) Josephson current for an interacting
quantum dot at β = 400 with t0 = t, εd = −U/2, λ = t/2, ∆ =
t/5. The upper (lower) panel corresponds to the topological
(nontopological) phase. The values of U and µ are indicated
in the Fig. Energies are expressed in units of t = 1 .
cally. Moreover, our model can be written in Nambu rep-
resentation with a Bogoliubov de-Gennes (BdG) Hamil-
tonian HBdG = H0τz + ∆τx, where H0 results from the
normal parts of the Hamiltonian H while ∆ originates
from the pairing contributions. The Pauli matrices τi
(with i = x, y, z) operate in particle-hole space. Diago-
nalizing the BdG Hamiltonian, the Josephson current can
be obtained from I = (2e/)∂E0(φ)/∂φ, where E0(φ) is
the many-body ground state energy. Corresponding re-
sults are presented in Fig. 4.
The spectrum of HBdG is shown in the lower panels
for the topological (left and middle) and the nontopo-
logical (right) phase.
In the topological phase, there
are zero-energy bound states (light-blue curves) which
emerge from the Majoranas states localized at the far
ends of the finite-length chains. The solid red curves
emerge from the hybridization of the dot states with the
adjacent Majoranas.
In the nontopological phase, the
subgap states are gapped. As a consequence of Kramers
theorem, the subgap states are twofold degenerate at φ
equal to integer multiples of π. At other flux values,
time reversal is broken by the phase bias and the subgap
states are nondegenerate. The top panel of Fig. 4 shows
the Josephson current for values of µ both in the topo-
logical (µ < 2λ) and the nontopological (µ > 2λ) phases.
In the topological phase, the Josephson current jumps at
φ = π (up to finite-size effects), reflecting the level cross-
ing of the subgap states. (Note that we assume complete
equilibration over fermion parities.) The nontopological
phase exhibits the usual smooth behavior.
For a nonzero interaction U , the Josephson current
can be calculated by evaluating G(21)
d,σ (iωn) using quan-
tum Monte Carlo simulations [39]. Previous works on
S-QD-S junctions [12, 15, 16] as well as normal wires
coupled to correlated dots and molecules [40, 41] proved
this strategy to be accurate and reliable. We perform a
µ = 0
µ = 1.8
0.1
I
0.05
0
0.02
0
I
U = 0
U = 1
U = 6
U = 10
-0.02
0
0.25
0.5
φ/π
0.75
1
4
At all phase differences, the ground state is an equal-
probability superposition of ↑, 0, 0i and ↓, 1, 1i. These
states describe configurations with overall zero spin. In-
deed, in both states the quantum dot spin of /2 is point-
ing opposite to the fractional spins of /4 of the two ad-
jacent superconductors. Thus, these configurations can
be interpreted as an effective singlet configuration of the
quantum dot spin and the fractional spins of the topo-
logical superconductors.
Similar to the singlet formation via hybridization with
the quasiparticle continuum of nontopological supercon-
ductors [19], this singlet formation with the fractional
spins quenches the π-junction behavior.
Indeed, the
low-energy spectrum emerging from the Schrieffer-Wolff
treatment predicts a Josephson energy which is mini-
mal at phase differences equal to integer multiples of 2π.
Moreover, we also see that there is a cusp in the ground
state energy at a phase difference of π. Both of these
results are consistent with our numerical results which
incorporate the hybridization with the quasiparticle con-
tinuum above the superconducting gap.
quantum dot ρ(ω) = −2Pσ Im[GR
In Fig. 3, we benchmark our low-energy Hamiltonian
with results for the local density of states (LDOS) at the
d,σ(ω)]. The latter was
calculated by analytically continuing the Monte Carlo
data to the real frequency axis. Results are shown in
the color plot. The low-energy spectrum obtained from
Heff is shown as solid lines for comparison. The peaks
in the LDOS reflect the energy necessary to add or re-
move one particle. Thus, the peak positions can be es-
timated from Heff by the energy difference between the
odd-parity eigenstates and the ground state, which yields
± [J/2 + J cos(φ/2) ± J/2 sin(φ/2)]. We find that our
numerics is qualitatively consistent with the predictions
of Heff , although the numerics is performed in a regime
where the addition spectrum already hybridizes with the
quasiparticle continuum. Apart from shifts in energy,
the hybridization lifts the degeneracies at φ = 0 and 2π.
Besides the low energy features which are qualitatively
described by Heff , the numerical results also exhibit high-
energy features at ±U/2, which are associated with the
charge-transfer peaks of the impurity Anderson model.
TRITOPS-QD-TRITOPS Josephson junctions com-
bine topological superconductivity with time reversal
symmetry and electron-electron interactions. While this
is superficially similar to quantum spin Hall Josephson
junctions including interactions either within the edge
states [47, 48] or through coupling to an interacting quan-
tum dot [49, 50], these two types of Josephson junctions
are governed by remarkably different physics. Quan-
tum spin Hall Josephson junctions exhibit an 8π-perodic
Josephson effect which can be interpreted as resulting
from the tunneling of e/2 charges enabled by the forma-
tion of Z4 parafermions or from a spin transmutation as a
consequence of the fermion parity anomaly [49]. In con-
trast, the present system has a Josephson effect which is
FIG. 3. (Color online) LDOS at the quantum dot obtained by
QMC. The black dashed lines are the predictions for the peaks
in the density of states on the basis of Heff with J = 0.2. The
amplitude of the superconducting gap ∆ = 0.2 is indicated in
thin lines. Other parameters are U = 4t, J = 0.2, λ = 0.5t,
t0 = t, µ = 0 and β = 400.
Hamiltonian (for details, see [38], Sec. 3).
In a first step, we project the tunneling Hamiltonian
Hc to the subgap states of the wires, giving Hc =
teff eiφ/4Pσ(cid:16)Γ†L,σdσ + d†σΓR,σ(cid:17) + H.c, where teff . t0
and the Bogoliubov operators for the zero-energy modes
satisfy Γ†L = Γ†L,↑
= −iΓR,↓
(see [46] and [38], Sec. 2). Focusing on the particle-
hole symmetric point εd = −U/2, and eliminating the
empty and doubly occupied states of the quantum dot
by a Schrieffer-Wolff transformation, we obtain (see [38],
Sec. 3 for details, including more general configurations)
= iΓL,↓, and Γ†R = Γ†R,↑
(cid:16)Γ†LΓR − Γ†RΓL(cid:17)(cid:21)
(7)
φ 2
d(cid:20)(nL + nR − 1) + i sin
d ΓRΓL(cid:17)(cid:27) ,
(cid:16)S−d Γ†LΓ†R − S+
Heff = J(cid:26)Sz
φ 2
+i cos
The Hamiltonian Heff is easily diagonalized.
where J = 4t2
eff /U and we defined the occupations
nα = Γ†αΓα. A convenient basis for this Hamiltonian
is σ, nL, nRi with nα = 0, 1 and σ =↑,↓. Note that nα
also labels the polarization of the fractional spins.
It con-
serves the number parity of n = nL + nR. For n = 1,
the terms involving S±d do not contribute and we find
doubly-degenerate eigenstates which are linear superpo-
sitions of σ, 1, 0i and σ, 0, 1i with energy ±J/2 sin(φ/2).
For even occupations n, we have two phase-independent
states with degenerate eigenergies J/2 corresponding to
↑, 1, 1i and ↓, 0, 0i as well as a pair of nondegenerate
states with energies −J/2 ± J cos(φ/2), which are linear
combinations of the states ↑, 0, 0i and ↓, 1, 1i.
-1.8
0.0
0.5
1.0
φ/π
1.5
2.0
1.8
1.2
0.6
∆
0.0
−∆
-0.6
-1.2
E(φ)
4π periodic and results from an effective singlet forma-
tion with two fractional spins.
Acknowledgements. We acknowledge support from
CONICET, and UBACyT, Argentina as well as Deutsche
Forschungsgemeinschaft and Alexander von Humboldt
Foundation, Germany. LA thanks the ICTP-Trieste for
hospitality through a Simons associateship. This work
was sponsored by PIP 112-201101-00832 of CONICET
and PICT 2013-1045, PICT 2012- of the ANPCyT.
[1] S. De Franceschi, L. Kouwenhoven, C. Schonenberger and
W. Wersdorfer, Nature Nanotechology, 5, 703 (2010).
[2] A. Mart´ın-Rodero and A. Levy Yeyati, Adv. Phys. 60, 899
(2011).
[3] M. R. Buitelaar, T. Nussbaumer, and C. Schonenberger,
Phys. Rev. Lett. 89, 256801 (2002).
[4] T. Sand-Jespersen, J. Paaske, B. M. Andersen, K. Grove-
Rasmussen, H. I. Jorgensen, M. Aagesen, C. B. Sorensen,
P. E. Lindelof, K. Flensberg, and J. Nygard, Phys. Rev.
Lett. 99, 126603 (2007).
[5] C. Buizert, A. Oiwa, K. Shibata, K. Hirakawa, and S.
Tarucha, Phys. Rev. Lett. 99, 136806 (2007).
[6] J.-D. Pillet, P. Joyez, R. Zitko, and M. F. Goffman, Phys.
Rev. B 88, 045101 (2013).
[7] I.O. Kulik, Zh. Eksp. Teor. Fiz. 49, 585 (1965) [Sov. Phys.
JETP 22, 841 (1966)].
[8] H. Shiba and T. Soda, Prog. Theor. Phys. 41, 25 (1969).
[9] L. I. Glazman and K. A. Matveev, Pisma Zh. Eksp. Teor.
Fiz. 49, 570 (1989) [JETP Lett. 49, 659 (1989)].
[10] B. I. Spivak and S. A. Kivelson, Phys. Rev. B 43, 3740
(1991).
[11] E. Vecino, A. Martin-Rodero, and A. Levy Yeyati, Phys.
Rev. B 68, 035105 (2003).
[12] F. Siano and R. Egger , Phys. Rev. Lett. 93, 047002
(2004).
[13] M.-S. Chi, M. Lee, K. Kang, and W. Belzig, Phys. Rev.
B ( R) 70, 020502 (2004).
[14] T. Meng, P. Simon, S. Florens, Phys. Rev. B 79, 224521
(2009).
[15] D. J. Luitz and F. F. Assaad, Phys. Rev. B 81, 024509
(2010).
[16] D. J. Luitz, F. F. Assaad, T. Novotny, C. Karrasch, and
V. Meden, Phys. Rev. Lett. 108, 227001 (2012).
[17] A. Oguri, Y. Tanaka, and J. Bauer, Phys. Rev. B 87,
075432 (2013).
[18] R. Allub and C. R. Proetto, Phys. Rev. B 91, 045442
(2015).
[19] G. Kirsanskas, M. Goldstein, K. Flensberg, L. I. Glaz-
man, and J. Paaske, Phys. Rev. B 92, 235422 (2015).
[20] J. Alicea, Rep. Prog. Phys. 75, 076501, (2012).
[21] A. Y. Kitaev, Physics-Uspekhi 44, 131 (2001).
[22] R. M. Lutchyn, J. D. Sau,and S. Das Sarma, Phys. Rev.
5
Lett. 105 077001 (2010).
[23] Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett.
105 177002 (2010).
[24] C. L. M. Wong and K. T. Law, Phys. Rev. B 86, 184516
(2012).
[25] S. Nakosai, Y. Tanaka, and N. Nagaosa, Phys. Rev. Lett.
108, 147003 (2012).
[26] S. Deng, L. Viola and G. Ortiz, Phys. Rev. Lett. 108,
036803 (2012).
[27] F. Zhang, C. L. Kane, and E. J. Mele, Phys. Rev. Lett.
111, 056402 (2013).
[28] A. Keselman, L. Fu, A. Stern, and E. Berg, Phys. Rev.
Lett. 111, 116402 (2013).
[29] E. Dumitrescu and S. Tewari, Phys. Rev. B 88, 220505
(2013).
[30] S. B. Chung, J. Horowitz, and X-L. Qi, Phys. Rev. B 88,
214514 (2013).
[31] S. Nakosai, J. C. Budich, Y. Tanaka, B. Trauzettel, and
N. Nagaosa, Phys. Rev. Lett. 110, 117002 (2013).
[32] A. Haim, A. Keselman, E. Berg, and Y. Oreg, Phys. Rev.
B 89, 220504(R) (2014).
[33] E. Gaidamauskas, J. Paaske, and K. Flensberg, Phys.
Rev. Lett. 112, 126402 (2014).
[34] J. Klinovaja, A. Yacoby, and D. Loss, Phys. Rev. B 90,
155447 (2014).
[35] C. Schrade, A. A. Zyuzin, J. Klinovaja, and D. Loss,
Phys. Rev. Lett. 115, 237001 (2015).
[36] A. Haim, E. Berg, K. Flensberg, and Y. Oreg, Phys. Rev.
B 94, 161110(R) (2016).
[37] Y. Kim, D. E. Liu, E. Gaidamauskas, J. Paaske, K. Flens-
berg, and R. M. Lutchyn, Phys. Rev. B 94, 075439 (2016).
[38] Supplementary Material.
[39] J.E. Hirsch and R. M. Fye, Phys. Rev. Lett. 56, 2521
(1986).
[40] L. Arrachea and M. J. Rozenberg, Phys. Rev. B 72,
041301 (2005).
[41] A. Camjayi and L. Arrachea, Phys. Rev. B 86, 235143
(2012) and J. Phys.: Condens. Matter 26 035602 (2014).
[42] P. Werner, A. Comanac, L. De Medici, M. Troyer, and
A.J. Millis, Phys. Rev. Lett. 97, 076405 (2006).
[43] K. Haule, Phys. Rev. B 75, 155113 (2007).
[44] A. Hewson, The Kondo Problem to Heavy Fermions,
Cambridge University Press (Cambridge, 1993).
[45] J. R. Schrieffer and P. A. Wolff, Phys. Rev. 149, 491
(1966).
[46] We introduce the notation ΓL/R,σ to make the tunneling
Hamiltonian more compact. It also turns out that this no-
tation is helpful in performing the Schrieffer-Wolff trans-
formation (see [38], Section 3).
[47] F. Zhang and C.L. Kane, Phys. Rev. Lett. 113, 036401
(2014).
[48] C. P. Orth, R. P. Tiwari, T. Meng, and T. L. Schmidt,
Phys. Rev. B 91, 081406(R) (2015).
[49] Y. Peng, Y. Vinkler-Aviv, P.W.Brouwer, L.I. Glazman,
and F. von Oppen, Phys. Rev. Lett. 117, 267001 (2016).
[50] H.-Y. Hui and J.D. Sau, Phys. Rev. B 95, 014505 (2017).
1. JOSEPHSON CURRENT AND GREEN FUNCTIONS
Starting from the definition, the Josephson current
it may be written as
I = −2t0Xσ
Imhhc†α,1,σdσii ,
I = −
2t0
β Xσ Xn
ImhG(11)
1α,d,σ(iωn)i ,
6
(8)
(9)
where G(11)
Green function
1α,d,σ(iωn) is the Matsubara component of the matrix element (1, 1) of the Nambu-Gorkov imaginary-time
G1α,d,σ(τ ) = −hTτhcα,1,σ(τ ) d†σ(0)ii −hTτhc†α,1,σ(τ ) d†σ(0)ii
−hTτhcα,1,σ(τ ) dσ(0)ii −hTτhc†α,1,σ(τ ) dσ(0)ii
The latter satisfies the following Dyson equation
.
G1α,d,σ(τ ) = g1α,σ(τ )tc Gd,σ(τ ),
with tc = −t0 τ3, being τ3 the third Pauli matrix and
g1α,σ(τ ) = −hTτhcα,1,σ(τ )c†α,1,σ(0)ii0 −hTτhc†α,1,σ(τ )c†α,1,σ(0)ii0
−hTτ [cα,1,σ(τ )cα,1,σ(0)]i0 −hTτhc†α,1,σ(τ )cα,1,σ(0)ii0 .
(10)
(11)
(12)
(15)
Here hi0 denotes the mean value with respect to the density matrix of the disconnected wire, while hi is the mean
value with respect to the density matrix of the full Hamiltonian. Substituting (11) in (9) leads to
I =
2t02
β Xσ Xn
Imhg(12)
1α,σ(iωn)G(21)
d,σ (iωn)i .
(13)
2. CONTINUUM MODEL FOR THE TRITOPS WIRE
The Hamiltonian proposed in Ref. [1], written in Eq. (1) of the main text, expressed in k-space reads
H =Xk,σ
{[−2t cos(ka) + 2λσ sin(ka) − µ] c†k,σck,σ + 2∆ cos(ka)c†k,σc†
−k,−σ + H.c},
(14)
where a is the lattice constant. Without the pairing term, this Hamiltonian defines dispersion relations for ↑ and ↓
fermions, which are shifted one another along the k-axis as a consequence of the spin-orbit term. Hence, there are in
general four Fermi vectors, kα,σ, where α = l, r denotes left and right movers, respectively. They satisfy kr,σ = −kl,σ,
with ↑ =↓ and ↓ =↑. In addition, the pairing term opens a gap ∆ cos(k), which vanishes at k = ±π/2 and has different
signs for k < π/2 and for k > π/2. The low-energy model for this Hamiltonian is derived by writing
cj,σ ∼ √a(cid:2)eikr,σjaψr,σ + e−ikl,σjaψl,σ(cid:3) ,
where ψα,σ(x), with α = L, R are fermionic fields for the left and right movers, respectively, with spin σ.
Let us focus on the case where kr,↑ = −kl,↓ = π/2, which corresponds to the critical case where the superconducting
Instead, the other fermions at the Fermi level with kr,↓ = −kl,↑ are under the effect of a finite
gap vanishes.
superconducting pairing, and a gap opens in the spectrum at these points. For the derivation of the low-energy model
in this particular case we project on the gapless states and (15) reads
cj,↑ ∼ √aeiπja/2ψr,↑,
cj,↓ ∼ √ae−iπja/2ψl,↓,
(16)
7
where the indices l, r are now redundant and will be omitted. Substituting in (14) and, keeping the leading orders for
each of the terms of the Hamiltonian, we get the following low-energy continuum model
H ∼ (2λ − µ)Xσ Z dxψ†σ(x)ψσ(x) + 2taXσ Z dxψ†σ(x)i∂xsσψσ(x) + 2∆aZ dxψ†
↑
(x)i∂xψ†
↓
(x) + H.c.,
(17)
with s↑,↓ =↑,↓. For simplicity, and without affecting the key features of the original model, we will drop the second
term ∝ t.
The same arguments above can be repeated for kr,↓ = −kl,↑ = π/2, in which case the pairing between states with
kr,↑ = −kl,↓ have different sign with respect to the ones in previous case. Hence, we get the Hamiltonian (17) but
with a − sign in front of the last term. The corresponding Bogoliubov-de Gennes matrix for the full low-energy
Hamiltonian reads
HT RIT OP S = (2λ − µ)τz − 2a∆pτxσz,
(18)
where τx,y,z are Pauli matrices acting on the spinors ψ†p↑
The topological phase takes place for 2λ − µ > 0, while 2λ − µ < 0, corresponds to a trivial superconductor. If we
define a domain wall where 2λ − µ changes sign, we get zero-energy modes localized at the domain wall. To get the
structure of the zero-energy modes, we consider a linear domain wall centered at x = 0, i.e., 2λ(x) − µ(x) = αx. For
α > 0, we have a nontopological (topological) superconducting phase for x < 0 (x > 0), while the opposite situation
takes place for α < 0. Following Ref. [2] we can calculate the zero-energy modes localized at the wall by calculating
H 2 and identifying it with the Hamiltonian for an Harmonic oscillator. The solutions for the zero-modes read
c−p↓(cid:17), while σz acts on the spin degrees of freedom.
=(cid:16)c†p↑
Γ↑ =Z dxφ0(x)hψ↑(x) ± iψ†
↓
(x)i ,
Γ↓ =Z dxφ0(x)hψ↓(x) ± iψ†
↑
(x)i ,
(19)
where the ± corresponds to α <, > 0, respectively and φ0(x) is the zero-mode wave function of the effective harmonic-
oscillator Hamiltonian. If we now represent the junction between the TRITOPS wires with a domain wall at the left
with α > 0 followed by another at the right with α < 0. The corresponding zero-modes will have the structure of the
Bogoliubov operators
Γ†L = Γ†L,↑
= iΓL,↓,
Γ†R = Γ†R,↑
= −iΓR,↓.
(20)
3. SCHRIEFFER-WOLFF TRANSFORMATION AND DERIVATION OF THE EFFECTIVE
LOW-ENERGY HAMILTONIAN
In this Section, we derive the effective Hamiltonian Heff in the limit of occupation 1 at the dot for arbitrary coupling
to the left and right leads tL, tR (cid:28) −εd, U + εd. This is analogous to the derivation of a Kondo Hamiltonian from the
Anderson model [3, 4]
Projecting the operators of the left and right superconductors attached to the quantum dot onto the low-energy
subgap modes leads to the following Hamiltonian to describe the low-energy physics
Hlow = −eiφ/4Xσ (cid:16)tLΓ†L,σdσ + tRd†σΓR,σ(cid:17) + H.c. + Hd,
(21)
where tL, tR . t0 represent the coupling to the TRITOPS leads and Γα,σ are the Bogoliubov operators corresponding
to the zero-modes of the wires localized at the left and right sides of the quantum dot which satisfy the properties
(20).
In the limit of tL, tR (cid:28) −εd, U + εd, we can eliminate the high-energy states of the quantum dot by recourse to a
Schrieffer-Wolff transformation [4]. Since Γα,↑ and Γα,↓ are related by Eqs. (20), we first write the Hamiltonian Hlow
in terms of the independent operators ΓL,↑ = Γ↑ and ΓR,↓ = Γ↓. This choice leads to a form of Heff with spin-spin
interactions similar to the usual Kondo model.
Following the conventional procedure [3] we obtain
Heff = −(JLLnd↑ + JRRnd↓)/2 + Sz
+JLR cos(φ/2)(cid:0)S+
d S−Γ + S−d S+
d [JLLn↑ − JRRn↓ + JLR sin(φ/2)(cid:16)Γ†
Γ(cid:1) − iW cos(φ/2)(cid:16)Γ†
↓ − Γ↓Γ↑(cid:17) .
Γ†
↑
Γ†
↓
+ Γ↓Γ↑(cid:17)]
(22)
↑
8
(23)
sin2(φ/2) + W 2 cos2(φ/2).
(27)
This implies the lifting of ↑,↓ degeneracies of the eigenstates and the opening of a gap at φ = π. The consequence
of the gap opening is a change in the periodicity of the Josephson current to 2π, as in junctions of non-topological
superconductors. The ground state remains in the even space and the behavior of the Josephson current corresponds
to the 0-phase.
In the case of a magnetic field perpendicular to the direction of the spin-orbit interaction B = Bex the ground
state is also in the even subspace. Some degeneracies are lifted but the four-fold degeneracy at φ = π remains and the
Josephson current preserves the 4π-degeneracy and the behavior of the Josephson current corresponds to the 0-phase.
Results for B = Bez and B = Bex are shown in Fig. 4 for the half-filled configuration and in Fig. 5 away from
half-filling. The non-symmetric coupling to the leads tLL 6= tRR does not change qualitatively these pictures.
[2] Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett.
[1] F. Zhang, C. L. Kane and E. J. Mele, Phys. Rev. Lett.
111, 056402 (2013).
(26)
LR cos2(φ/2),
1 2
±
JLL + JRR
2
E±e = −
Γ = Γ†
↑
. This Hamiltonian conserves the parity number and total spin projection Sz = Sz
Γ = (n↑ − n↓) /2, with nσ = Γ†σΓσ, S+
The spin operators are Sz
and S+,−d
main text corresponds to (22) for tLL = tRR = t and εd = −U/2.
Restricting for the moment to the subspace with total even number of particles [for which the terms of Eq. (22)
containing Γ†
and Γ↓Γ↑ become irrelevant], in the case of symmetric coupling where JLL = JRR = JLR = J, the
↑
Hamiltonian reduces to the Heisenberg Hamiltonian with antiferromagnetic coupling 2J along z and J cos(φ/2) on the
x− y plane. Interestingly, the exchange interaction takes place between the 1/2-spin localized at the quantum dot and
an effective 1/2-spin formed by the 1/4-spin excitations localized at the ends of the chains close to the quantum dot.
In the general case, the lowest-energy eigenstates and can be written as ψ±e i = ( ↑↓i ± ↓↑i) /√2, where the first
entry corresponds to the spin of the dot and the second one to the effective spin of the side-chains. The corresponding
eigenenergies are:
Γ↑ and similar expressions for Sz
d
Γ. Eq. (7) in the
d + Sz
Γ†
↓
E±e = −(JLL + JRR)/2 ± JLR cos(φ/2).
(24)
The two additional eigenstates are σσi, with σ =↑,↓ and have zero energy.
In the subspace with odd number of particles, the eigenstates are a mixture of σ, 0i and σ,↑↓i, with eigenenergies
E±o = −
JLL + JRR
4
±s(cid:20) JLL − JRR
4
(cid:21)2
+
J 2
LR
4
sin2(φ/2) + W 2 cos2(φ/2)
(25)
and they are doubly degenerate due to the two possible orientations of σ at the dot.
JLL = JRR = J and W = 0.
The eigenenergies given in the main text correspond (up to an energy shift of −J/2) to Eqs. (24) and (25) for
For arbitrary φ, the GS of the full Hamiltonian is in the even subspace. For φ = (2m + 1)π, with m integer, the
states ψ±e i cross and they become also degenerate with the doublet of the odd subspace, hence, defining a 4-fold
degenerate level crossing. In all the cases, this main features do not depend on the value of εd and tL, tR. Due to this
level crossing, the Josephson current has a peridicity of 4π.
The diagonalization of the effective Hamiltonian Heff leads to the 8 lowest-energy states of the spectrum of Hlow.
The latter Hamiltonian has 8 additional higher energy states corresponding to the dot empty or doubly occupied.
The effect of a magnetic field B locally applied at the quantum dot can be analyzed in the limit of B (cid:28) U by
adding to the effective Hamiltonian of Eq. (22) a term B · Sd. In the case of a magnetic field in the direction of the
spin-orbit interaction, B = Bez, the eigenenergies of Eq. (24) are modified to
with
Jαβ =
2U tαtβ
(εd + U )(−εd)
,
W =
.
(2εd + U )tLtR
(εd + U )(−εd)
Γ↓, S−Γ = Γ†
↓
qB2 + 4J 2
(cid:19)2
J 2
LR
4
+
±s(cid:18) JLL − JRR
4
B 2
±
JLL + JRR
4
Eo = −
while the eigenenergies (25) change to
9
,
,
FIG. 4. (Color online) Spectrum of Heff for the quantum dot at half filling εd = −U/2 and symmetric coupling to the leads
tLL = tRR, corresponding to J = 1, W = 0. Left: B = 0, center B = Bez and right B = Bex. Black and red corresponds,
respectively to even and odd subspaces.
,
,
FIG. 5.
(Color online) Spectrum of Heff for the quantum dot away from half-filling and symmetric coupling to the leads
tLL = tRR, corresponding to J = W = 1. Left: B = 0, center B = Bez and right B = Bex. Black and red corresponds,
respectively to even and odd subspaces.
105 177002 (2010).
[4] J. R. Schrieffer and P. A. Wolff, Phys. Rev. 149, 491
[3] A. Hewson, The Kondo Problem to Heavy Fermions, Cam-
(1966).
bridge University Press (Cambridge, 1993).
[5] We consider a general situation where the coupling to left
and right may be different.
0.5
φ/π
1
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.5
φ/π
1
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.2
0.4
0.6
0.8
1
φ/π
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.5
φ/π
1
0.5
0
-0.5
-1
-1.5
-2
0
E(φ)/J
0.5
φ/π
1
0
-1
E(φ)/J
-2
0
0.5
φ/π
1
0.5
0
-1
-0.5
E(φ)/J
-1.5
-2
0
Supplemental Material: Fractional spin and Josephson effect in time-reversal-invariant
topological superconductors
Alberto Camjayi,1 Liliana Arrachea,2 Armando Aligia,3 and Felix von Oppen4
1Departamento de F´ısica, FCEyN, Universidad de Buenos Aires and IFIBA,
Pabell´on I, Ciudad Universitaria, 1428 CABA Argentina
2International Center for Advanced Studies, UNSAM, Campus Miguelete,
3Centro At´omico Bariloche and Instituto Balseiro, CNEA, 8400 S. C. de Bariloche, Argentina
4Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universitat Berlin, 14195 Berlin, Germany
25 de Mayo y Francia, 1650 Buenos Aires, Argentina
1. JOSEPHSON CURRENT AND GREEN FUNCTIONS
Starting from the definition, the Josephson current
it may be written as
I = −2t0Xσ
β Xσ Xn
2t0
Imhhc†α,1,σdσii ,
1α,d,σ(iωn)i ,
ImhG(11)
I = −
(1)
(2)
where G(11)
Green function
1α,d,σ(iωn) is the Matsubara component of the matrix element (1, 1) of the Nambu-Gorkov imaginary-time
G1α,d,σ(τ ) = −hTτhcα,1,σ(τ ) d†σ(0)ii −hTτhc†α,1,σ(τ ) d†σ(0)ii
−hTτhcα,1,σ(τ ) dσ(0)ii −hTτhc†α,1,σ(τ ) dσ(0)ii
.
The latter satisfies the following Dyson equation
G1α,d,σ(τ ) = g1α,σ(τ )tc Gd,σ(τ ),
with tc = −t0τ 3, being τ3 the third Pauli matrix and
arXiv:1612.07410v2 [cond-mat.mes-hall] 31 Jul 2017
Here hi0 denotes the mean value with respect to the density matrix of the disconnected wire, while hi is the mean
value with respect to the density matrix of the full Hamiltonian. Substituting (4) in (2) leads to
g1α,σ(τ ) = −hTτhcα,1,σ(τ )c†α,1,σ(0)ii0 −hTτhc†α,1,σ(τ )c†α,1,σ(0)ii0
−hTτ [cα,1,σ(τ )cα,1,σ(0)]i0 −hTτhc†α,1,σ(τ )cα,1,σ(0)ii0 .
β Xσ Xn
d,σ (iωn)i .
Imhg(12)
1α,σ(iωn)G(21)
2t02
I =
2. CONTINUUM MODEL FOR THE TRITOPS WIRE
The Hamiltonian proposed in Ref. [1], written in Eq. (1) of the main text, expressed in k-space reads
H =Xk,σ
{[−2t cos(ka) + 2λσ sin(ka) − µ] c†k,σck,σ + 2∆ cos(ka)c†k,σc†
−k,−σ + H.c},
where a is the lattice constant. Without the pairing term, this Hamiltonian defines dispersion relations for ↑ and ↓
fermions, which are shifted one another along the k-axis as a consequence of the spin-orbit term. Hence, there are in
(3)
(4)
(5)
(6)
(7)
cj,σ ∼ √a(cid:2)eikr,σjaψr,σ + e−ikl,σjaψl,σ(cid:3) ,
where ψα,σ(x), with α = L, R are fermionic fields for the left and right movers, respectively, with spin σ.
Let us focus on the case where kr,↑ = −kl,↓ = π/2, which corresponds to the critical case where the superconducting
Instead, the other fermions at the Fermi level with kr,↓ = −kl,↑ are under the effect of a finite
gap vanishes.
superconducting pairing, and a gap opens in the spectrum at these points. For the derivation of the low-energy model
in this particular case we project on the gapless states and (8) reads
cj,↑ ∼ √aeiπja/2ψr,↑,
cj,↓ ∼ √ae−iπja/2ψl,↓,
(9)
where the indices l, r are now redundant and will be omitted. Substituting in (7) and, keeping the leading orders for
each of the terms of the Hamiltonian, we get the following low-energy continuum model
H ∼ (2λ − µ)Xσ Z dxψ†σ(x)ψσ(x) + 2taXσ Z dxψ†σ(x)i∂xsσψσ(x) + 2∆aZ dxψ†
↑
(x)i∂xψ†
↓
(x) + H.c.,
(10)
with s↑,↓ =↑,↓. For simplicity, and without affecting the key features of the original model, we will drop the second
term ∝ t.
The same arguments above can be repeated for kr,↓ = −kl,↑ = π/2, in which case the pairing between states with
kr,↑ = −kl,↓ have different sign with respect to the ones in previous case. Hence, we get the Hamiltonian (10) but
with a − sign in front of the last term. The corresponding Bogoliubov-de Gennes matrix for the full low-energy
Hamiltonian reads
HT RIT OP S = (2λ − µ)τz − 2a∆pτxσz,
where τx,y,z are Pauli matrices acting on the spinors ψ†p↑
The topological phase takes place for 2λ − µ > 0, while 2λ − µ < 0, corresponds to a trivial superconductor. If we
define a domain wall where 2λ − µ changes sign, we get zero-energy modes localized at the domain wall. To get the
structure of the zero-energy modes, we consider a linear domain wall centered at x = 0, i.e., 2λ(x) − µ(x) = αx. For
α > 0, we have a nontopological (topological) superconducting phase for x < 0 (x > 0), while the opposite situation
takes place for α < 0. Following Ref. [2] we can calculate the zero-energy modes localized at the wall by calculating
H 2 and identifying it with the Hamiltonian for an Harmonic oscillator. The solutions for the zero-modes read
c−p↓(cid:17), while σz acts on the spin degrees of freedom.
=(cid:16)c†p↑
2
(8)
(11)
(12)
general four Fermi vectors, kα,σ, where α = l, r denotes left and right movers, respectively. They satisfy kr,σ = −kl,σ,
with ↑ =↓ and ↓ =↑. In addition, the pairing term opens a gap ∆ cos(k), which vanishes at k = ±π/2 and has different
signs for k < π/2 and for k > π/2. The low-energy model for this Hamiltonian is derived by writing
Γ↑ =Z dxφ0(x)hψ↑(x) ± iψ†
↓
(x)i ,
Γ↓ =Z dxφ0(x)hψ↓(x) ± iψ†
↑
(x)i ,
where the ± corresponds to α <, > 0, respectively and φ0(x) is the zero-mode wave function of the effective harmonic-
oscillator Hamiltonian. If we now represent the junction between the TRITOPS wires with a domain wall at the left
with α > 0 followed by another at the right with α < 0. The corresponding zero-modes will have the structure of the
Bogoliubov operators
Γ†L = Γ†L,↑
= iΓL,↓,
Γ†R = Γ†R,↑
= −iΓR,↓.
(13)
3. SCHRIEFFER-WOLFF TRANSFORMATION AND DERIVATION OF THE EFFECTIVE
LOW-ENERGY HAMILTONIAN
In this Section, we derive the effective Hamiltonian Heff in the limit of occupation 1 at the dot for arbitrary coupling
to the left and right leads tL, tR (cid:28) −εd, U + εd. This is analogous to the derivation of a Kondo Hamiltonian from the
Anderson model [3, 4]
Projecting the operators of the left and right superconductors attached to the quantum dot onto the low-energy
subgap modes leads to the following Hamiltonian to describe the low-energy physics
Hlow = −eiφ/4Xσ (cid:16)tLΓ†L,σdσ + tRd†σΓR,σ(cid:17) + H.c. + Hd,
(14)
where tL, tR . t0 represent the coupling to the TRITOPS leads and Γα,σ are the Bogoliubov operators corresponding
to the zero-modes of the wires localized at the left and right sides of the quantum dot which satisfy the properties
(13).
In the limit of tL, tR (cid:28) −εd, U + εd, we can eliminate the high-energy states of the quantum dot by recourse to a
Schrieffer-Wolff transformation [4]. Since Γα,↑ and Γα,↓ are related by Eqs. (13), we first write the Hamiltonian Hlow
in terms of the independent operators ΓL,↑ = Γ↑ and ΓR,↓ = Γ↓. This choice leads to a form of Heff with spin-spin
interactions similar to the usual Kondo model.
Following the conventional procedure [3] we obtain
3
Heff = −(JLLnd↑ + JRRnd↓)/2 + Sz
+JLR cos(φ/2)(cid:0)S+
d S−Γ + S−d S+
d [JLLn↑ − JRRn↓ + JLR sin(φ/2)(cid:16)Γ†
↓ − Γ↓Γ↑(cid:17) .
Γ(cid:1) − iW cos(φ/2)(cid:16)Γ†
Γ†
↑
↑
with
Γ†
↓
+ Γ↓Γ↑(cid:17)]
(15)
(16)
Jαβ =
2U tαtβ
(εd + U )(−εd)
,
W =
.
(2εd + U )tLtR
(εd + U )(−εd)
Γ↓, S−Γ = Γ†
↓
Γ = Γ†
↑
. This Hamiltonian conserves the parity number and total spin projection Sz = Sz
Γ = (n↑ − n↓) /2, with nσ = Γ†σΓσ, S+
The spin operators are Sz
and S+,−d
main text corresponds to (15) for tLL = tRR = t and εd = −U/2.
Restricting for the moment to the subspace with total even number of particles [for which the terms of Eq. (15)
containing Γ†
and Γ↓Γ↑ become irrelevant], in the case of symmetric coupling where JLL = JRR = JLR = J, the
↑
Hamiltonian reduces to the Heisenberg Hamiltonian with antiferromagnetic coupling 2J along z and J cos(φ/2) on the
x− y plane. Interestingly, the exchange interaction takes place between the 1/2-spin localized at the quantum dot and
an effective 1/2-spin formed by the 1/4-spin excitations localized at the ends of the chains close to the quantum dot.
In the general case, the lowest-energy eigenstates and can be written as ψ±e i = ( ↑↓i ± ↓↑i) /√2, where the first
entry corresponds to the spin of the dot and the second one to the effective spin of the side-chains. The corresponding
eigenenergies are:
Γ↑ and similar expressions for Sz
d
Γ. Eq. (7) in the
d + Sz
Γ†
↓
E±e = −(JLL + JRR)/2 ± JLR cos(φ/2).
(17)
The two additional eigenstates are σσi, with σ =↑,↓ and have zero energy.
In the subspace with odd number of particles, the eigenstates are a mixture of σ, 0i and σ,↑↓i, with eigenenergies
E±o = −
JLL + JRR
4
±s(cid:20) JLL − JRR
4
(cid:21)2
+
J 2
LR
4
sin2(φ/2) + W 2 cos2(φ/2)
(18)
and they are doubly degenerate due to the two possible orientations of σ at the dot.
JLL = JRR = J and W = 0.
The eigenenergies given in the main text correspond (up to an energy shift of −J/2) to Eqs. (17) and (18) for
For arbitrary φ, the GS of the full Hamiltonian is in the even subspace. For φ = (2m + 1)π, with m integer, the
states ψ±e i cross and they become also degenerate with the doublet of the odd subspace, hence, defining a 4-fold
degenerate level crossing. In all the cases, this main features do not depend on the value of εd and tL, tR. Due to this
level crossing, the Josephson current has a peridicity of 4π.
The diagonalization of the effective Hamiltonian Heff leads to the 8 lowest-energy states of the spectrum of Hlow.
The latter Hamiltonian has 8 additional higher energy states corresponding to the dot empty or doubly occupied.
The effect of a magnetic field B locally applied at the quantum dot can be analyzed in the limit of B (cid:28) U by
adding to the effective Hamiltonian of Eq. (15) a term B · Sd. In the case of a magnetic field in the direction of the
spin-orbit interaction, B = Bez, the eigenenergies of Eq. (17) are modified to
(19)
LR cos2(φ/2),
1 2
±
JLL + JRR
2
E±e = −
sin2(φ/2) + W 2 cos2(φ/2).
(20)
qB2 + 4J 2
(cid:19)2
J 2
LR
4
+
±s(cid:18) JLL − JRR
4
B 2
±
JLL + JRR
4
Eo = −
while the eigenenergies (18) change to
4
,
,
FIG. 1. (Color online) Spectrum of Heff for the quantum dot at half filling εd = −U/2 and symmetric coupling to the leads
tLL = tRR, corresponding to J = 1, W = 0. Left: B = 0, center B = Bez and right B = Bex. Black and red corresponds,
respectively to even and odd subspaces.
,
,
FIG. 2.
(Color online) Spectrum of Heff for the quantum dot away from half-filling and symmetric coupling to the leads
tLL = tRR, corresponding to J = W = 1. Left: B = 0, center B = Bez and right B = Bex. Black and red corresponds,
respectively to even and odd subspaces.
This implies the lifting of ↑,↓ degeneracies of the eigenstates and the opening of a gap at φ = π. The consequence
of the gap opening is a change in the periodicity of the Josephson current to 2π, as in junctions of non-topological
superconductors. The ground state remains in the even space and the behavior of the Josephson current corresponds
to the 0-phase.
In the case of a magnetic field perpendicular to the direction of the spin-orbit interaction B = Bex the ground
state is also in the even subspace. Some degeneracies are lifted but the four-fold degeneracy at φ = π remains and the
Josephson current preserves the 4π-degeneracy and the behavior of the Josephson current corresponds to the 0-phase.
Results for B = Bez and B = Bex are shown in Fig. 1 for the half-filled configuration and in Fig. 2 away from
half-filling. The non-symmetric coupling to the leads tLL 6= tRR does not change qualitatively these pictures.
[1] F. Zhang, C. L. Kane and E. J. Mele, Phys. Rev. Lett.
111, 056402 (2013).
[2] Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett.
105 177002 (2010).
[3] A. Hewson, The Kondo Problem to Heavy Fermions, Cam-
bridge University Press (Cambridge, 1993).
[4] J. R. Schrieffer and P. A. Wolff, Phys. Rev. 149, 491
(1966).
[5] We consider a general situation where the coupling to left
and right may be different.
0.5
φ/π
1
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.5
φ/π
1
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.2
0.4
0.6
0.8
1
φ/π
0
-0.5
-1
E(φ)/J
-1.5
-2
0
0.5
φ/π
1
0.5
0
-0.5
-1
-1.5
-2
0
E(φ)/J
0.5
φ/π
1
0
-1
E(φ)/J
-2
0
0.5
φ/π
1
0.5
0
-1
-0.5
E(φ)/J
-1.5
-2
0
|
1403.4464 | 2 | 1403 | 2015-07-17T09:19:05 | Effects of tilting the magnetic field in 1D Majorana nanowires | [
"cond-mat.mes-hall"
] | We investigate the effects that a tilting of the magnetic field from the parallel direction has on the states of a 1D Majorana nanowire. Particularly, we focus on the conditions for the existence of Majorana zero modes, uncovering an analytical relation (the sine rule) between the field orientation relative to the wire, its magnitude and the superconducting parameter of the material. The study is then extended to junctions of nanowires, treated as magnetically inhomogeneous straight nanowires composed of two homogeneous arms. It is shown that their spectrum can be explained in terms of the spectra of two independent arms. Finally, we investigate how the localization of the Majorana mode is transferred from the magnetic interface at the corner of the junction to the end of the nanowire when increasing the arm length. | cond-mat.mes-hall | cond-mat |
Effects of tilting the magnetic field in 1D Majorana nanowires
Javier Osca,1, ∗ Daniel Ruiz,1 and Lloren¸c Serra1, 2
1Institut de F´ısica Interdisciplin`aria i de Sistemes Complexos IFISC (CSIC-UIB), E-07122 Palma de Mallorca, Spain
2Departament de F´ısica, Universitat de les Illes Balears, E-07122 Palma de Mallorca, Spain
(Dated: February 25, 2014)
We investigate the effects that a tilting of the magnetic field from the parallel direction has on
the states of a 1D Majorana nanowire. Particularly, we focus on the conditions for the existence of
Majorana zero modes, uncovering an analytical relation (the sine rule) between the field orientation
relative to the wire, its magnitude and the superconducting parameter of the material. The study is
then extended to junctions of nanowires, treated as magnetically inhomogeneous straight nanowires
composed of two homogeneous arms. It is shown that their spectrum can be explained in terms of
the spectra of two independent arms. Finally, we investigate how the localization of the Majorana
mode is transferred from the magnetic interface at the corner of the junction to the end of the
nanowire when increasing the arm length.
PACS numbers: 73.63.Nm,74.45.+c
I.
INTRODUCTION
In 2003 Kitaev pointed out the usefulness of topolog-
ical states for quantum computing operations.1 Essen-
tially, topological states are quantum states with a hid-
den internal symmetry.2 They are usually localized close
to the system edges or interfaces and their nonlocal na-
ture gives them a certain degree of immunity against
local sources of noise. A subset of this kind of states
called Majorana edge states is attracting much interest
in condensed matter physics.3–13 Majorana states are ef-
fectively chargeless zero-energy states that behave as lo-
calized non abelian anyons. It is theorized that nontriv-
ial phases arise from their mutual interchange, caused by
their nonlocal properties.14,15 Furthermore, these states
have the property of being their own anti-states, giving
rise to statistical behavior that is neither fermionic nor
bosonic.
Instead, the creation of two Majorana quasi-
particle excitations in the same state returns the system
to its equilibrium state. This kind of quasiparticles in-
herits its name from Ettore Majorana who theorized the
existence of fundamental particles with similar statistical
properties.16
Majorana states have been theoretically predicted in
many different systems and some of them have been re-
alized experimentally.
In particular, evidences of their
formation at the ends of semiconductor quantum wires
inside a magnetic field with strong spin-orbit interaction
and in close proximity to a superconductor have been
seen in Refs. 17–21. Superconductivity breaks the charge
symmetry creating quasiparticle states without a defined
charge that are a mixture of electron and hole excita-
tions. On the other hand, the spin-orbit Rashba effect
is caused by an electric field perpendicular to the prop-
agation direction that breaks the inversion symmetry of
the system while the external magnetic field breaks the
spin rotation symmetry of the nanowire. The combined
action of both effects makes the resulting state effectively
spinless and, including superconductivity, also effectively
chargeless and energyless.22–38
This work addresses the physics of 1D nanowires with
varying relative orientations between the external mag-
netic field and the nanowire (see Fig. 1). This physics is
of relevance, e.g., for the exchange of Majoranas on net-
works of 1D wires, where it has been suggested that Ma-
joranas can be braided by manipulating the wire shapes
and orientations.39–41 The Hamiltonian of the system
is expressed in the continuum and the analysis is per-
formed using two complementary approaches: the com-
plex band structure of the homogeneous wire and the
numerical diagonalization for finite systems. The com-
plex band structure allows a precise characterization of
the parameter regions of the semi-infinite wire where Ma-
joranas, if present, are not distorted by finite size effects.
On the contrary numerical diagonalizations of finite sys-
tems, even though reflecting the same underlying physics,
yield smoothened transitions between different physical
regions of parameter space.
For the semi-infinite system we uncover an analytical
law limiting the existence of Majorana modes below crit-
ical values of the angles between the magnetic field and
the nanowire. This law, referred to in this article as the
sine rule, is shown to be approximately valid in finite sys-
tems too. We find a correspondence of the finite system
spectrum with its infinite wire counterpart, explaining
this way its distinctive features and regimes in simplest
terms.
The results for the homogeneous nanowire are subse-
quently used to explain the spectrum of a junction of two
nanowires with arbitrary angle. The junction is mod-
eled as a non homogeneous straight nanowire with two
regions characterized by different magnetic field orienta-
tions (see Fig. 1b). While the magnetic field remains par-
allel to the nanowire in one arm, we study the spectrum
variation when changing the magnetic field angles in the
other. Similarities between the homogeneous and inho-
mogeneous nanowire spectra allow us to explain many of
the features of the latter in terms of those of the former.
Finally, we investigate the dependence with the distance
of the magnetic interface (the corner of the junction) to
the end of the nanowire, finding a transfer phenomenon
where the Majoranas change localization from the inter-
face for a short arm to the nanowire end as the arm length
is increased.
This work is organized as follows. In Sec. II the phys-
ical model is introduced and Sec. III presents the above
mentioned sine rule. In Sec. IV we discuss the spectrum
of excited states of a homogeneous nanowire while in Sec.
V we address an inhomogeneous system representing a
nanowire junction. We study changes in the spectrum
due to the tilting (V A) and stretching (V B) of one of
the junction arms. Finally, the conclusions of the work
can be found in Sec. VI.
II. PHYSICAL MODEL
We assume a one dimensional model of a semiconduc-
tor nanowire as a low energy representation of a higher
dimensional wire with lateral extension, when only the
first transverse mode is active. The system is described
by a Hamiltonian of the Bogoliubov-deGennes kind,
HBdG = (cid:18) p2
x
2m
+ V (x) − µ(cid:19) τz
+∆B (sin θ cos φ σx + sin θ sin φ σy + cos θ σz)
+ ∆s τx +
α
h
pxσyτz ,
(1)
where the different terms are, in left to right order, ki-
netic, electric and chemical potential, Zeeman, supercon-
ducting and Rashba spin-orbit terms. The Pauli oper-
ators for spin are represented by σx,y,z while those for
isospin are given by τx,y,z. Superconductivity is modeled
as an s-wave superconductive term that couples different
states of charge.
The superconductor term in Eq. (1) is an effective
mean field approximation to a more complicated phonon-
assisted attractive interaction between electrons. This
interaction leads to the formation of Cooper pairs with
break-up energy ∆s. Experimentally, superconductivity
can be achieved by close proximity between the semi-
conductor nanowire and a metal superconductor. The
semiconductor wire becomes superconducting when its
width is smaller than the coherence length of the Cooper
pairs. On the other hand, the Rashba spin orbit term
arises from the self-interaction between an electron (or
hole) spin with its own motion. This self interaction is
due to the presence of a transverse electric field that is
perceived as an effective magnetic field in the rest frame
of the quasiparticle. This electric field can be induced ex-
ternally but, usually, is a by-product of an internal asym-
metry of the nanostructure. In the Hamiltonian Eq. (1)
we have taken x as the orientation of the 1D nanowire
while an effective spin orbit magnetic field ~Bso pointing
along y may be defined due to the coupling of the Rashba
term with the y component of the spin.
We consider the nanowire in an external magnetic field,
giving spin splittings through the Zeeman term in Eq. (1).
2
a)
b)
FIG. 1. Sketches of the physical systems considered in this
work. a) Straight nanowire on the x axis in a homogeneous
magnetic field characterized by spherical angles θ and φ. b)
Junction of two nanowires in a uniform magnetic field (left)
represented as a straight nanowire with a magnetic inhomo-
geneity (right).
In this paper we assume the magnetic field in arbitrary di-
rection, including the possibility of being inhomogeneous
in space for some setups. The direction of the magnetic
field is parametrized by the spherical polar and azimuthal
angles θ and φ. These two angles are constant for a ho-
mogeneous wire (Fig. 1a) and they change smoothly from
one to the other arm in a nanowire junction (Fig. 1b).
Summarizing, superconductor, Rashba spin-orbit and
Zeeman effects are parametrized in Eq. (1) by ∆s, α and
∆B, respectively. These parameters are taken constant
because the nanowire is considered to be made of an ho-
mogeneous material. The only inhomogeneity allowed in
certain cases is a change in the magnetic field direction
at a single magnetic interface between two homogeneous
regions.
Along this work the Hamiltonian of Eq. (1) is solved
for homogeneous parameters in the infinite, semi-infinite
and finite wires, as well as for the inhomogeneous finite
case, using different approaches. When a direct diago-
nalization of the Hamiltonian for a finite system is per-
formed, soft potential edges and magnetic interface are
used. The shape of the potential edges is modeled as
Fermi-like functions centered on those edges. High po-
tential is imposed outside the nanowire while low poten-
tial (usually zero) is assumed inside. When a magnetic
interface is present a smooth variation in the field angles
is modeled in the same way. Specifically, those smooth
functions read
V (x) = V0 [1 + F (x; xL, sv) − F (x; xR, sv)] ,
θ(x) = θL + (θR − θL) [1 − F (x; xm, sm)] ,
φ(x) = φL + (φR − φL) [1 − F (x; xm, sm)] ,
(2)
(3)
(4)
for the potential and the field polar and azimuthal angles,
3
in the semi-infinite system and use those results to un-
derstand the physics of Majoranas in a finite system. In
this approach we eliminate from the analysis the finite
size effects caused by the overlapping of the Majorana
wave functions at both ends of a finite nanowire. Al-
though it is obvious that for long enough wires the size
effect becomes negligible, disentangling finite size behav-
ior from intrinsic Majorana physics using calculations of
only finite systems is much less obvious.
Majorana mode creation has been understood as a
phase transition of the lowest excited state, signaled by
the closing and reopening of a gap in the infinite nanowire
band spectrum,23 as shown in Figs. 3a and 3b. The phase
transition follows in this case a well known law, requiring
high-enough fields for Majoranas to exist,
∆B ≥ p∆2
s + µ2 .
(8)
Notice that, as mentioned, for the equality in Eq. (8) a
gap closes for k = 0 in Fig. 3b.
In Ref. 37 Eq. (8) was derived, in an alternative way,
from the analysis of the complex-k solutions compatible
with the boundary condition of a semi-infinite nanowire
in a parallel field. This approach relies on the property
that the complex band structure (allowing an imaginary
part in k) of the homogeneous wire contains all the in-
formation about all possible eigenstates of any piecewise
homogeneous wire. In general, an eigenstate of the infi-
nite homogeneous wire with a given arbitrary k can be
expressed as
sσsτ eikx χsσ (ησ)χsτ (ητ ) ,
(9)
Ψ(k)
Ψ(k)(x, ησ, ητ ) = Xsσ,sτ
where Ψ(k)
bers are sσ = ± and sτ = ±.
sσsτ are state amplitudes and the quantum num-
The sharp semi-infinite wire with x > 0 is obviously
piecewise homogeneous, implying that the Majorana so-
lution allowed by the existence of an edge at x = 0 must
be a linear superposition of the homogeneous nanowire
eigenstates of complex wave number with Im(k) > 0,
otherwise it could not be a localized state. The resulting
restriction is
Xk, Im(k)>0
CkΨ(k)
sσsτ = 0 ,
(10)
where the Ck's are complex numbers characterizing the
superposition of state amplitudes. The allowed wave
numbers are calculated solving the determinant
det(cid:8)Hsσ sτ ,s′
σs′
τ (k) − E 11(cid:9) = 0 ,
(11)
for E = 0. In fact, the allowed k's can be calculated for
any energy but we are interested in particular in those at
zero energy corresponding to Majorana solutions.
The wave number dependence on magnetic field is de-
picted in Fig. 4a for a selected case. For a fixed energy E
there are always eight possible wave numbers, but only
FIG. 2. Spectrum of a finite length nanowire with L = 50Lso
as a function of the external magnetic field magnitude ∆B.
Other nanowire parameters are ∆s = 0.25Eso and µ = 0. The
magnetic field angles are θ = 90◦ and φ = 15◦. Only the eight
states lying closer to zero energy are displayed. Note that a
zero energy Majorana mode is created at around ∆B = 0.3Eso
and destroyed for values of ∆B near one unit. The vertical
lines (dots) indicate the onset and destruction of the Majo-
rana mode as predicted by Eqs. (8) and (13), respectively.
respectively. The Fermi function F is defined as
F (x; x0, s) =
1
1 + e(x−x0)/s .
(5)
In Eq. (2) V0 is the value of the potential outside the
nanowire while θL/R and φL/R are the field angles at
left and right of the magnetic interface. The potential
left and right edges are centered on xL and xR and the
magnetic interface is centered on xm. Their softness is
controlled by the parameters sv and sm, where zero soft-
ness means a steep interface and a high value implies a
smooth one.
The numerical results of this work are presented in
special units obtained by taking , m and the Rashba
spin-orbit interaction α as reference values. That is, our
length and energy units are
Lso =
Eso =
2
αm
α2m
2
,
.
(6)
(7)
III. A SINE RULE
Let us consider a nanowire in a uniform magnetic field
with θ = 90◦ and an arbitrary φ (see Fig. 1a). A direct
diagonalization of Eq. (1) for a finite length of the wire
and φ = 15◦ yields the spectrum depicted in Fig. 2 as a
function of the magnetic field intensity. A main feature
of this figure is the existence of a Majorana mode, lying
very near zero energy, but only for a particular range of
values of the magnetic field. For the parameters of the
figure the Majorana mode is created around ∆B = 0.3Eso
and destroyed in a rather abrupt way around ∆B = Eso.
It is well known that Majorana wave functions decay
to zero towards the nanowire interior. We can there-
fore analyze the creation and destruction of Majoranas
4
FIG. 4. Imaginary parts of the wave numbers (only positive
ones) in an infinite homogeneous nanowire with ∆s = 0.25Eso
and µ = 0 as function of a) the value of the longitudinally
oriented magnetic field, b) the azimuthal angle φ of a magnetic
field with ∆B = 0.4Eso and polar angle θ = 90◦. Gray color
is used for non degenerate modes while black is indicating
degeneracy with two or more modes actually having the same
Im(k).
critical value of the magnetic field ∆(c)
not under this quantity, thus leading to Eq. (8). Further
details on the methodology can be found in Ref. 37. Here
we want to use this approach to determine whether a
similar condition on the field orientation, with critical
values of the angles, exists or not.
B = p∆2 + µ2, but
Figure 4b shows the evolution of the wave numbers
when increasing φ while maintaining θ = 90◦, i.e., main-
taining the magnetic field in the plane formed by the
nanowire direction and the effective spin orbit magnetic
field direction ~Bso. This means that for φ = 0◦ the mag-
netic field is aligned with the nanowire, while for φ = 90◦
it is completely perpendicular to it and parallel to ~Bso.
In Fig. 4b care has been taken to choose a value of ∆B
that fulfills the Majorana condition for the parallel φ = 0
orientation Eq. (8). We can see that for φ = 40.1◦ two
of the complex wave numbers become real, thus destroy-
ing the Majorana mode for azimuthal angles above this
value.
The physical behavior implied by Fig. 4b is a sud-
den loss of the Majorana mode as the tilting angle φ
exceeds a critical value, due to the system no longer hav-
ing the required four evanescent modes with Im(k) > 0.
The evanescent modes are lost because of the closing
of the gap between states of opposite wave numbers
FIG. 3. Band structure of the infinite homogeneous nanowire
with ∆s = 0.25Eso and µ = 0 for a) parallel field (θ, φ) =
(90◦, 0◦) with ∆B = 0.4Eso, b) the same as a) but on the
phase transition point ∆B = 0.25Eso, c) tilted field (θ, φ) =
(90◦, 38.68◦) with ∆B = 0.4Eso.
those with Im(k) > 0 are displayed in Fig. 4a. In this
representation the closing of the k = 0 gap in Fig. 3b cor-
responds to a node of Im(k) in Fig. 4a. In order to be able
to hold a Majorana a semi-infinite nanowire has to fulfil
two simultaneous requirements. First, the nanowire must
have four complex wave numbers with Im(k) > 0 allowed
at zero energy; and second, a solution different from zero
(nontrivial) must be possible for the Ck's in Eq. (10).
That is, interpreting the state amplitudes Ψ(k)
sσsτ as a 4×4
matrix where the four k's correspond for instance to rows
and the four spin-isospin values {++, +−, −+, −−} to
columns, the condition for a nontrivial solution is
det{Ψ(k)
sσsτ } = 0 .
(12)
In a parallel field this condition is fulfilled only above a
(k ≈ ±2L−1
so for the particular case shown in Fig. 3c).
We characterize next the dependence of the critical an-
gle on ∆B and ∆s.
In Fig. 5a we can see a contour
plot of Im(k) as a function of φ and the ratio ∆s/∆B
for an external branch wave number,33 corresponding to
the lower black line of Fig. 4b. The values where Im(k)
vanish separate the plot into two regions, the lower one
where the Majorana is allowed and the upper (white)
where no Majorana can exist. Although Eq. (11) can be
solved analytically, the angles where Im(cid:0)k(φ, ∆s/∆B)(cid:1)
vanishes can be obtained only numerically because φ ap-
pears as argument of sine and cosine functions and no
isolation is possible. As a consequence, the values of φ
where the wave number first reaches zero have been found
numerically and are plotted in Fig. 5c against the test
function arcsin(∆s/∆B). The perfect coincidence be-
tween the two results within computer precision demon-
strates that a Majorana can not exist for angles such that
sin φ > ∆s/∆B, provided θ = 90◦.
Figure 5b shows a contour plot of Im(k) for an in-
ternal branch wave number,33 corresponding to the up-
per mode in Fig. 4b. In this plot the φ roots of Im(k)
lie inside an upper and lower bounded region around
0.95Eso < ∆B < Eso.
In fact, two of the wave num-
bers become real in the white region of the contour plot.
Note that this region lies in the non Majorana sector,
above the transition discussed in panel a) which is now
signaled by the dotted line. Theoretically the existence
of this region determines two different fermionic regimes.
One where a fermion mode at zero energy is constructed
of plane waves with two complex and two real wave num-
bers and another one made of a full set of real wave num-
bers. Since we assume bound states in order to extrap-
olate the results to finite systems, these cases have no
relevance to us. Nevertheless the underlying causes for
the existence of this region will be relevant in the study
of the excited states of the finite nanowire. This will be
further developed in Sec. IV.
Repeating the analysis for different polar angles θ, as
shown in Fig. 5c, we conclude that the angular restriction
for the existence of Majoranas is
∆B sin θ sin φ < ∆s .
(13)
In other words, the projection of the magnetic field en-
ergy parameter into the spin orbit effective magnetic field
~Bso needs to be smaller than the superconductor gap en-
ergy in order to have Majoranas in a semi-infinite wire.
We refer to this condition as the sine rule. Notice that
Eq. (13) is not a generalization of Eq. (8), but an addi-
tional law. Both Eq. (8) and Eq. (13) have to be simul-
taneously met for the existence of a Majorana mode in a
semi-infinite wire.
In general, the sine rule Eq. (13) yields an extra bound
to be considered when identifying regions of Majoranas
in parameter space. For instance, assuming fixed angles
(θ, φ) and varying ∆B there is a lower bound on ∆B from
Eq. (8) and an upper bound from the sine rule. Analo-
gously, if for a fixed ∆B the Majorana is allowed by Eq.
5
FIG. 5. a) Contour plot of Im(k) for the external branch of
the nanowire propagating bands. The horizontal axis contains
the ratio ∆s/∆B and the vertical one the azimuthal angle φ.
The polar angle is fixed to θ = 90◦ and µ = 0. b) Contour plot
of Im(k) for the internal branch of the nanowire propagating
bands. The horizontal axis shows ∆B and the vertical one
the azimuthal angle φ. The polar angle is fixed to θ = 90◦,
∆s = 0.8Eso and µ = 0. c) Plot of the azimuthal critical angle
where Im(k) vanishes in the upper left panel as function of
∆s/∆B (points) checked against the sine rule prediction Eq.
(13). Besides the θ = 90◦ case of the upper left panel, the
figure also contains the comparison for other values of θ. The
value of the chemical potential can be taken arbitrarily since
it is irrelevant for this comparison.
(8) at φ = 0◦ and and we increase φ the sine rule yields
an upper bound on φ. Therefore, as explained, both
equations must be met simultaneously to obtain a Majo-
rana mode. Furthermore, after some parameter testing
we have determined that the sine rule is not affected by
the value of the chemical potential µ. This means that
the overall dependence on µ for the existence of Majo-
rana modes in the semi-infinite nanowire is completely
covered by Eq. (8).
The disappearance of the Majorana when increasing φ
is not a phase transition in the sense that no imaginary
part of a mode wave number crosses zero in between two
regions with non null values. As shown in Fig. 4b for
the polar angle θ = 90◦, above the critical φ the value
of Im(k) remains stuck at zero value. The main differ-
ence between the phase transition law in Eq. (8) and the
sine rule Eq. (13) lies in the different type of gap closing
for both cases. As shown in Fig. 3b the phase transi-
6
dently of the value of the other angle (provided Eq. (8)
is fulfilled). That is, below the critical angle a projection
into ~Bso is never high enough to break the Majorana. In
practice, if the Majorana is allowed by Eq. (8), it will
survive for any φ provided θ < θc or, alternatively, for
any θ provided φ < φc. These critical angles are
θc = φc = arcsin(cid:18) ∆s
∆B(cid:19) .
(14)
IV. EXCITED STATES
While in the preceding section we focussed on the
physics of the Majoranas at zero energy, comparing semi-
infinite and finite nanowires, in this section we address
the spectrum of excited states. The main effect of the
boundary conditions is to allow only a discrete set of
wave numbers instead of a continuous one. What we
have done is sketch the finite nanowire spectrum by se-
lecting wave numbers at regular intervals and tracking
the evolution of their energy levels with an increasing
angle φ. For these examples we maintain the polar angle
θ = 90◦ because this is the most physically interesting
configuration due to the possibility of aligning external
and spin-orbit magnetic fields; nevertheless, analogous
plots can be done for different values of θ. The resulting
spectrum, shown in Fig. 7, explains the main features
of the numerical diagonalization results of Fig. 6 for the
same parameters.
In principle, we could also set the boundary conditions
exactly as we did in Eq. (10), but we have found this
approach impossible to follow on a practical level. The
resulting set of equations reads
C(L)
k Ψ(k)
sσ sτ e−ikL/2 = 0 ,
Xk
Xk
and C(R)
k
C(R)
k Ψ(k)
sσsτ eikL/2 = 0 ,
(15)
k
where C(L)
are the coefficients at the left and
right nanowire ends, respectively. Basically, the resulting
matrix from Eq. (15) is ill defined since it contains very
large and very small matrix elements.
The spectra of both panels of Fig. 7 can be divided
into three different regions depending on the angle φ.
First, for low values of φ there is a region where a Majo-
rana mode exists and is topologically protected. In Fig.
7 the Majorana is not seen since only excited states of
real wave number are shown, but we can see the corre-
sponding gap. For values of φ above those determined
by the sine rule the Majorana mode is destroyed and we
can see a region of many level crossings. This behavior
of the spectrum is explained by the gap closing of the
external branches of the conduction band noticing that
in the finite model only some discrete values are allowed,
as sketched in Fig. 8. Finally, for higher angular values
the region of zero crossings finishes and a third region
arises with two possible behaviors.
FIG. 6.
a) Spectrum of a nanowire of length L = 50Lso
with ∆s = 0.8Eso and µ = 0 as a function of φ with a fixed
θ = 90◦ and ∆B = 0.9Eso. Note the spectrum change at the
angle predicted by the sine rule (dotted line) as well as the
spectrum collapse for values of φ close to 90◦. For values of
φ above 90◦ the spectrum is given by the mirror image of the
shown values. b) The same as a) but for a fixed magnetic field
value ∆B = 1.1Eso. Note that for values of φ close to 90◦ now
the two modes closer to zero are fermionic modes separated
from each other by an energy gap.
tion delimited by Eq. (8) is caused by a gap closing and
reopening on a single wave number k = 0 (labeled as
interior branches of the spectrum).
In the language of
semiconductor band structure physics we may call this
the closing of a direct gap. Oppositely, the sine rule is
caused by the closing of an indirect gap for k ≈ ±kf (la-
beled as exterior branches of the spectrum), as shown in
Fig. 3c for a selected case.
We have checked these laws against the direct numer-
ical diagonalization for a finite nanowire, finding a rea-
sonable agreement as shown in Figs. 2 and 6.
In Fig.
2 the magnetic field orientation is kept fixed to a tilted
orientation while the field magnitude is changed and in
Fig. 6 the magnitude is fixed while the orientation is
changed. The main difference between the precise laws
for the semi-infinite model and the finite system results is
in the smoothness of the spectrum evolution around the
transition points. While in the semi-infinite model the
transition between fermionic modes to Majorana modes
and vice versa happens at a single point in the parame-
ter space, in the finite system we can see these transitions
smoothed. This occurs due to the finite size effects, i.e.,
the little overlap of Majoranas on opposite ends of the
nanowire. Furthermore, while Majoranas lie at exactly
zero energy in the semi-infinite model, this small interac-
tion makes the finite system Majoranas to have a finite
small energy ǫ.
A close inspection of the sine rule Eq. (13) reveals that
there exist critical values for θ and φ such that if they
are not surpassed a Majorana is always allowed, indepen-
7
FIG. 7. Spectrum obtained from the homogeneous nanowire
band energies at selected wave numbers, displayed as tracers
as a function of φ. Panel a) corresponds to the same param-
eters of Fig. 6a. Note that qualitatively similar regions occur
for increasing angles in both figures. In particular the spec-
trum nearly collapses for values of φ close to 90◦. Panel b)
shows the same as a) but for the parameters of Fig. 6b. Note
that for values of φ close to 90◦ the two lower states (closer
to zero energy) are fermionic modes separated by a gap as in
Fig. 6b.
As shown in Figs. 6 and 7 for high φ angles (near 90◦),
depending on the parameters the spectrum either opens a
gap or collapses near zero energy. The behavior depends
on the way the internal branches of the band cross the
zero energy value for those angles. The internal branches
of the band can cross the zero energy level for high angles
in one k > 0 point, like in Fig. 8a, thus leading (jointly
with the external branch crossing point) to four real and
four complex wave numbers; or, alternatively, the interior
brach can cross zero energy in more than one k > 0 point,
like in Fig. 8b, leading to wavefunctions characterized by
eight real wave numbers.
In the latter case there is a
wave number range where the band spectrum lies very
close to zero energy, yielding this way a collapse of the
finite wire spectrum. The particular set of parameters
where one or the other situation happens depends on the
behavior of the internal branches of the band structure
and it is not as easily predictable as the behavior of the
external branches that led to the sine rule. The region of
values where this collapse arises coincides with the region
where the allowed solutions at zero energy are made of
real wave numbers only and it was already presented in
Fig. 5a for the µ = 0 case.
FIG. 8.
Approximate spectrum of a finite nanowire in a
particular configuration of the external magnetic field. a)
With only two positive real wave numbers. b) With four
positive real wave numbers.
V. MAGNETIC INHOMOGENEITY MODELS
In this section we explore the physics of a junction
of two straight nanowires with a certain angle in pres-
ence of a homogeneous magnetic field parallel to one of
the arms, as sketched in Fig. 1b. We assume a repre-
sentation of the system as a single straight 1D nanowire
containing a magnetic interface. The inhomogeneity sep-
arates two homogeneous regions with different directions
(but the same magnitude) of the external magnetic field.
The system is solved by numerical diagonalization, as-
suming a soft magnetic interface, interpreting the results
by comparing with the homogeneous nanowire discussed
in the preceding section. We focus on two specific effects,
tilting and stretching of one of the two junction arms.
A. Arm tilting
The magnetic field is aligned with the left arm and
the spectrum of the nanowire is computed for varying
orientations of the field in the the right arm (see Fig.
9). As mentioned, this model represents under certain
approximations a bent nanowire in a homogeneous mag-
netic field. It was shown in Ref. 42 that bent nanowires
can be approximated by 1D models with a potential well
simulating the effect of the bending. Here we have only
considered the magnetic field change of direction as the
main inhomogeneity source, disregarding the electrical
8
FIG. 10. Majorana density function of an inhomogeneous
nanowire similar to the one described in Fig. 9a. The mag-
netic field azimuthal angles in the two arms are φL = 0◦ and
φR = 90◦, while all along the nanowire it is θ = 90◦. Other
parameters are ∆B = 0.4, ∆s = 0.25.
FIG. 9.
a) Nanowire spectrum for ∆s = 0.8Eso and µ = 0
with a magnetic inhomogeneity at its center as a function
of the tilting angle φ. On the left side of the nanowire the
magnetic field is parallel, while on the right side its angles are
(θ = 90◦, φ). The magnetic field strength is constant in both
sides and equal to ∆B = Eso. b) Spectrum of a nanowire in
a homogeneous magnetic field with angles (θ = 90◦, φ) and
with the rest of parameters as in a).
potential effects of the bending.
The spectrum of the inhomogeneous nanowire can be
explained in terms of the homogeneous one for a tilted
magnetic field. Figure 9 compares the inhomogeneous
(upper) with the homogeneous (lower) nanowire spec-
trum for the same set of parameters, showing that both
results share the same essential features. More precisely,
three φ regions can be found in both cases, but with
two main differences. First, while for the homogeneous
nanowire increasing φ leads to the destruction of the Ma-
joranas on both ends, for the inhomogeneous nanowire
only the right side Majorana is destroyed. The density of
the Majorana for the inhomogeneous nanowire is shown
in Figs. 10 and 11 for selected values of the parameters.
As a consequence, the bent junction holds a Majorana
mode (the one localized in the left side of the inhomo-
geneity) independently of the magnetic angle at the right
side.
A second difference between upper and lower panels of
Fig. 9 is that the spectra for the inhomogeneous nanowire
is not symmetric with respect to φ = 90◦, in contrast with
the homogeneous nanowire. A zero energy crossing local-
ized in the inhomogeneity interface arises at φ = 145◦ for
the selected parameters in Figs. 9a and 11. The corre-
sponding bound state originates in the second excited
state of the system and it is not Majorana in nature.
Furthermore, this localized state is caused completely by
the magnetic inhomogeneity and has no relationship with
FIG. 11. Density function of the first excited state of the
inhomogeneous nanowire of Fig. 9a. This state becomes lo-
calized at the magnetic inhomogeneity for an azimuthal angle
φ = 145◦ (and polar angle θ = 90◦).
the localized states found in the bending region in Ref.
42 because we have disregarded those effects. Although
we know these states are related with the magnetic inho-
mogeneity, a deep understanding of their causes and the
particular set of parameters leading to their enhancement
or quenching is yet to be understood.
B. Arm stretching
We study now the behavior of the Majorana modes in
the nanowire as a function of the inhomogeneity distance
to the nanowire end. The magnetic field directions are
fixed at (θ = 90◦, φ = 0◦) on the left end and (θ =
90◦, φ = 180◦) on the right end of the nanowire. This is
a particularly interesting configuration as it is the only
setup where both ends lie inside a longitudinal magnetic
field, apart from the homogeneous case. This way, all the
observed effects must be caused by the inhomogeneity
and its distance with respect to the left nanowire end.
Figure 12 shows the probability densities of the zero
energy state at different positions of the magnetic inter-
face with respect the left side of the nanowire. From
upper to lower panels of Fig. 12 we may follow the evo-
lution as the distance of the magnetic interface to the
9
FIG. 13. Spectrum of the nanowire described in the caption
of Fig. 12 as a function the magnetic interface position.
dle point of the nanowire both Majoranas are located
at their corresponding ends.
It is also worth noticing
that this Majorana transfer does not imply a departure
of the mode from zero energy because the Majorana on
the other end of the nanowire is not affected (see Fig. 13).
Additionally, the transfer phenomenon is not caused by
finite size effects since we have checked that it happens
for the same characteristic distance when the right end
is further displaced to the right.
VI. CONCLUSIONS
In this work we have studied the spectra of 1D
nanowires for arbitrary orientation of the magnetic field,
focussing in particular on the conditions leading to a Ma-
jorana mode. This study has been realized from different
perspectives and methods in an effort to explain the vari-
ety of observed phenomena. We have combined the com-
plex band structure techniques of infinite homogeneous
nanowires with numerical diagonalizations of finite sys-
tems.
We have demonstrated an additional condition, besides
the well known topological transition law, that needs to
be taken into account in order to predict the regimes of
existence of Majorana modes with tilted fields. We have
named this additional condition the sine rule. The sine
rule predicts an upper bound on the magnetic field at
which Majoranas are to be found in a 1D wire with tilted
field. When the topological law is fulfilled, the sine rule
leads to critical values of the field angles θc and φc, such
that a Majorana mode is always found for any φ provided
θ < θc or, alternatively, for any θ provided φ < φc.
We have extended our analysis to nanowire junctions
with an arbitrary angle, modeled as magnetically inho-
mogeneous nanowires, explaining most of their proper-
ties in terms of the behavior of its homogeneous parts.
We have focussed, particularly, on the role of tilting and
stretching of one of the junction arms. We also reported
the existence of a bound non Majorana state located on
the magnetic inhomogeneity. Finally, we have studied
the Majorana transfer phenomenon as the distance of
the magnetic inhomogeneity to the nanowire end is in-
FIG. 12. Density distributions of the Majorana mode in a
finite nanowire with a magnetic inhomogeneity. We used
∆s = 0.25Eso, µ = 0 and a magnetic field of magnitude
∆B = 0.4Eso oriented parallel in the left side of the magnetic
interface and antiparallel in the right side.
In each panel
the potential well and the position of the magnetic interface
are shown. The latter corresponds to a Fermy-type function
whose position shifts to the right following the sequence from
upper to lower panels.
left end of the system is increased. Most remarkably, for
short distance the left Majorana is not peaked on the left
end, but remains stuck on the magnetic interface (upper
panels). If the distance is increased, however, the Ma-
jorana is eventually transferred to the left nanowire end
after some critical distance (lower panels). This trans-
fer is seen as a smooth decrease of the density maximum
at the magnetic interface accompanied by an increase at
the left end. Finally, when the interface is on the mid-
creased. Testing these predictions would require exper-
iments of nanowires in inhomogeneous magnetic fields.
Alternatively, it has been suggested in this work that a
bent nanowire in a homogeneous field should display sim-
ilar phenomena, while being more feasible in practice. As
an interesting continuation of this work we are presently
analyzing the validity of the sine rule in higher dimen-
sional nanowires, where the transverse degrees of freedom
require a multimode description of the electronic states.
ACKNOWLEDGMENTS
10
This work was funded by MINECO-Spain (grant
FIS2011-23526), CAIB-Spain (Conselleria d'Educaci´o,
Cultura i Universitats) and FEDER. We hereby acknowl-
edge the PhD grant provided by the University of the
Balearic Islands.
∗ javier@ifisc.uib-csic.es
1 A. Y. Kitaev, Annals Phys. 303, 2 (2003).
2 I. Affleck, T. Kennedy, E. H. Lieb, and H. Tasaki, Phys.
Rev. Lett. 59, 799 (1987).
3 F. Wilceck, Nature Phys. 5, 614 (2009).
4 X. L. Qi and S. C. Zhang, Rev. Mod. Phys. 83, 1057 (2011).
5 J. Alicea, Rep. Prog. Phys. 75, 076501 (2012).
6 M. Leijnse and K. Flensberg, Semicond. Sci. Technol. 27,
124003 (2012).
Lett. 105, 077001 (2010).
23 Y. Oreg, G. Refael, and F. von Oppen, Phys. Rev. Lett.
105, 177002 (2010).
24 T. D. Stanescu, R. M. Lutchyn, and S. Das Sarma, Phys.
Rev. B 84, 144522 (2011).
25 K. Flensberg, Phys. Rev. B 82, 180516 (2010).
26 A. C. Potter and P. A. Lee, Phys. Rev. Lett. 105, 227003
(2010).
27 A. C. Potter and P. A. Lee, Phys. Rev. B 83, 094525
7 C. W. J. Beenakker, Annu. Rev. Condens. Matter Phys.
(2011).
4, 113 (2013).
28 S. Gangadharaiah, B. Braunecker, P. Simon, and D. Loss,
8 T. D. Stanescu and S. Tewari, J. Phys. Condens. Matter
Phys. Rev. Lett. 107, 036801 (2011).
25, 233201 (2013).
9 M. Franz, Nature Nanotechnology 8, 149 (2013).
10 L. Fu and C. L. Kane, Phys. Rev. Lett. 100, 096407 (2008).
11 A. R. Akhmerov, J. Nilsson, and C. W. J. Beenakker,
29 R. Egger, A. Zazunov, and A. L. Yeyati, Phys. Rev. Lett.
105, 136403 (2010).
30 A. Zazunov, A. L. Yeyati, and R. Egger, Phys. Rev. B 84,
165440 (2011).
Phys. Rev. Lett. 102, 216404 (2009).
31 E. Prada, P. San-Jos´e, and R. Aguado, Phys. Rev. B 86,
12 Y. Tanaka, T. Yokoyama, and N. Nagaosa, Phys. Rev.
180503(R) (2012).
Lett. 103, 107002 (2009).
32 J. Klinovaja, S. Gangadharaiah, and D. Loss, Phys. Rev.
13 K. T. Law, P. A. Lee, and T. K. Ng, Phys. Rev. Lett. 103,
Lett. 108, 196804 (2012).
237001 (2009).
14 C. Nayak, S. H. Simon, A. Stern, M. Freedman, and S. Das
33 J. Klinovaja and D. Loss, Phys. Rev. B 86, 085408 (2012).
34 J. S. Lim, L. Serra, R. Lopez, and R. Aguado, Phys. Rev.
Sarma, Rev. Mod. Phys. 80, 1083 (2008).
B 86, 121103 (2012).
15 J. K. Pachos, Introduction to topological Quantum Compu-
35 J. S. Lim, R. Lopez, and L. Serra, New J. Phys. 14, 083020
tation (Cambridge University Press, 2012).
16 E. Majorana, Nuovo Cimento 14, 171 (1937).
17 V. Mourik, K. Zuo, S. Frolov, S. Plissard, E. Bakkers, and
L. Kouwenhoven, Science 336, 1003 (2012).
18 M. T. Deng, C. L. Yu, G. Y. Huan, M. Larsson,
and
P. Caroff, Nano Lett. 12, 6414 (2012).
(2012).
36 J. S. Lim, R. Lopez, and L. Serra, Europhys. Lett. 103,
37004 (2013).
37 L. Serra, Phys. Rev. B 87, 075440 (2013).
38 J. Osca and L. Serra, Phys. Rev. B 88, 144512 (2013).
39 J. Alicea, G. Refael, F. von Oppen, and M. P. A. Fisher,
19 L. P. Rokhinson, X. Liu,
and J. K. Furdyna, Nature
Nature Phys. 7, 412 (2011).
Physics 8, 795 (2012).
20 A. Das, Y. Ronen, Y. Most, Y. Oreg, M. Heiblum, and
H. Shtrikman, Nature Physics 8, 887 (2012).
21 A. D. K. Finck, D. J. Van Harlingen, P. K. Mohseni,
K. Jung, and X. Li, Phys. Rev. Lett. 110, 126406 (2013).
22 R. M. Lutchyn, J. D. Sau, and S. Das Sarma, Phys. Rev.
40 J. D.
J. Clarke,
Phys. Rev. B 84, 094505 (2011).
Sau, D.
and
S. Tewari,
41 B. I. Halperin, Y. Oreg, A. Stern, G. Refael, J. Alicea, and
F. von Oppen, Phys. Rev. B 85, 144501 (2012).
42 H. Wu, D. W. L. Sprung, and J. Martorell, Phys. Rev. B
45, 11960 (1992).
|
1803.00376 | 1 | 1803 | 2018-03-01T14:26:18 | Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe$_2$, WSe$_2$ and WS$_2$ monolayers | [
"cond-mat.mes-hall"
] | We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple semi-phenomenological description of the magnetic field evolution of individual electronic states in fundamental sub-bands by considering three additive components: valley, spin and orbital terms. We corroborate the validity of the proposed description by inspecting the Zeeman-like splitting of neutral and charged excitonic resonances in absorption-type spectra. The values of all three terms are estimated based on the experimental data, demonstrating the significance of the valley term for a consistent description of magnetic field evolution of optical resonances, particularly those corresponding to charged states. The established model is further exploited for discussion of magneto-luminescence data. We propose an interpretation of the observed large g-factor values of low energy emission lines, due to so-called bound/localized excitons in tungsten based compounds, based on the brightening mechanisms of dark excitonic states. | cond-mat.mes-hall | cond-mat | Orbital, spin and valley contributions to Zeeman splitting of
excitonic resonances in MoSe2, WSe2 and WS2 monolayers
M. Koperski1,2,3*, M. R. Molas1,2, A. Arora1, K. Nogajewski1, M. Bartos1, J. Wyzula1,4,
D. Vaclavkova1,4, P. Kossacki2, M. Potemski1,2
1 Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, Grenoble,
2 Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Warsaw, Poland
3School of Physics and Astronomy, The University of Manchester, Manchester M13 9PL, UK
4Department of Experimental Physics, Faculty of Science, Palacký University, Olomouc, Czech
France
Republic
*Maciej.Koperski@manchester.ac.uk
ABSTRACT
We present a comprehensive optical study of the excitonic Zeeman effects in transition
metal dichalcogenide monolayers, which are discussed comparatively for selected materials:
MoSe2, WSe2 and WS2. We introduce a simple semi-phenomenological description of the magnetic
field evolution of individual electronic states in fundamental sub-bands by considering three
additive components: valley, spin and orbital terms. We corroborate the validity of the proposed
description by inspecting the Zeeman-like splitting of neutral and charged excitonic resonances in
absorption-type spectra. The values of all three terms are estimated based on the experimental
data, demonstrating the significance of the valley term for a consistent description of magnetic
field evolution of optical resonances, particularly those corresponding to charged states. The
established model is further exploited for discussion of magneto-luminescence data. We propose
an interpretation of the observed large g-factor values of low energy emission lines, due to so-
called bound/localized excitons in tungsten based compounds, based on the brightening
mechanisms of dark excitonic states.
Subject Areas: Condensed Matter Physics, Nanophysics, Semiconductor Physics
Magneto-optical response of semiconducting transition metal dichalcogenide (sc-TMD)
monolayers is commonly investigated to probe the coupling strength of effective out-of-plane
angular momentum of carriers in K-valleys with external magnetic field in the limit of 2D
confinement. The direct band gap character of sc-TMD monolayers [1-5] allows for a comparative
study of absorption-type (reflectance and transmission) and photoluminescence processes, both
related to the K-valley states. The most obvious manifestation of magnetic coupling is revealed by
Zeeman-like splitting of excitonic resonances observed when the magnetic field is applied
perpendicularly to the surface of the structure [6-13]. The magnitude of the splitting is a quantitative
measure of magnetic-field-induced energy shifts of conduction and valence states involved in the
optical transitions. As such, the Zeeman-like effect for optical resonances may act as a validity test
for theoretical predictions and basic understanding of magnetic field impact on the energy of
electronic states in fundamental, K-point, sub-bands [14-23]. As for now, the accuracy of developed
models is rather poor, so that the explanation of even the simplest observations remains disputable.
Especially elusive is the role of so-called valley term, which is responsible for band-type effects
sensitive to magnetic field. Here, we aim to deepen the understanding of magneto-optical properties
of sc-TMD monolayers by introducing a phenomenological description of linear-with-magnetic-field
evolution of conduction and valence states involved in experimentally identified optical transitions.
This simple model includes valley, spin and orbital terms treated as additive components. Three
parameters related to these contributions can be estimated by comparatively analyzing polarization-
resolved magneto-reflectance spectra of different representatives of sc-TMD family (MoSe2, WSe2
and WS2 are considered in this work). Particularly, the examination of the resonances due to
negatively charged excitons provides information on magnetic field splitting of an individual state in
the conduction band, which unambiguously demonstrates the significance of the valley term in the
interpretation of experimental data and yields an estimation of its value. Further consequences
arising from the introduced model are revealed by the analysis of magneto-luminescence spectra,
which unveil large g-factor values of lines corresponding to bound/localized excitons combined
sometimes with peculiar polarization properties.
The band-edge reflectivity spectra of sc-TMD monolayers are dominated by two robust
resonances, known as A and B, which arise due to large spin-orbit splitting [24] strongly pronounced
in the valence band at the K-point. Both resonances are related to free neutral exciton states and are
classified according to the valence sub-band involved in the optical transition [25-32]. The
lower/higher energy excitons A/B are related to transitions involving a hole from the upper/lower
valence band state, respectively. Representative reflectance spectra of MoSe2, WSe2 and WS2
monolayers, measured with circular polarization resolution as a function of the external out-of-plane
is used to probe optical transition in K+/K- valleys, providing a remarkably simple sensitivity to valley
degree of freedom [33-35]. Upon application of an out-of-plane magnetic field, the splitting between
magnetic field, are presented in Fig. 1. In sc-TMD monolayers, the (cid:1)(cid:2)/(cid:1)(cid:4) circular polarization of light
(cid:1)(cid:2)/(cid:1)(cid:4) components (defined as (cid:5)(cid:6)(cid:7)−(cid:5)(cid:6)(cid:9) =(cid:11)(cid:12)(cid:13)(cid:14)) appears to be equal for A and B excitons for all
close to (cid:11)≈−4. Assuming that Zeeman splitting of an excitonic transition reflects the relative
Zeeman shifts of corresponding single-particle subbands, the experimental observation, (cid:11)(cid:17)=(cid:11)(cid:13)(≈
−4), represents one perceptible condition to be fulfilled by Zeeman shifts of individual electronic
reversal symmetry, the (cid:11)(cid:17)=(cid:11)(cid:13) condition leads to a 3-term parametrization of linear-with-field
having a simple physical meaning. Consequently, we introduce the valley ((cid:5)(cid:21)), spin ((cid:5)(cid:22)) and orbital
((cid:5)(cid:23)(cid:24)) terms which contribute to the energies of spin-orbit-split conduction and valence subbands in
contributions to the energy of fundamental conduction and valence subbands. Although different
possible sets of these 3 parameters can be formally introduced, we follow here a common wisdom
and assume that Zeeman shifts of all electronic subbands are expressed with 3 additive terms, each
three materials within the experimental accuracy and the resulting g-factor values are found to be
states. When combined with symmetric evolution of K+/K- states imposed by preservation of time-
the following way:
(cid:5)(cid:29),↑ ±=±(cid:5)(cid:21)+(cid:5)(cid:22) =(±(cid:11)(cid:21)+(cid:11)(cid:22))(cid:12)(cid:13)(cid:14)
(cid:5)(cid:29),↓ ±=±(cid:5)(cid:21)−(cid:5)(cid:22) =(±(cid:11)(cid:21)−(cid:11)(cid:22))(cid:12)(cid:13)(cid:14)
(cid:5)$,↑ ±=±(cid:5)(cid:21)+(cid:5)(cid:22)±(cid:5)(cid:23)(cid:24) =%±(cid:11)(cid:21)+(cid:11)(cid:22)±(cid:11)(cid:23)(cid:24)&(cid:12)(cid:13)(cid:14)
(cid:5)$,↓ ±=±(cid:5)(cid:21)−(cid:5)(cid:22) ± (cid:5)(cid:23)(cid:24) =%±(cid:11)(cid:21)−(cid:11)(cid:22)±(cid:11)(cid:23)(cid:24)&(cid:12)(cid:13)(cid:14)
'
(cid:26)(cid:28)
(cid:25)(cid:26)(cid:27)
where (cid:5)(cid:29)($),↑(↓)
±
is the energy of conduction (c) or valence (v), spin-up (› ) or spin-down (fl ) subband in
K+ or K- valley, m B is Bohr magneton, B stands for the strength of the magnetic field, and gV, gS, gd2 are
g-factors corresponding to EV, ES and Ed2 terms, respectively. A pictorial representation of how each
term independently affects the energy of states in the conduction band (CB) and valence band (VB)
in K+/K- valleys is illustrated in Fig. 2. It is important to note, that there exist two possible alignments
of spin in the conduction spin-orbit-split subbands.
The energy distance between A and B excitons is mostly defined by a large separation of spin-orbit-
split subbands in the valence band whereas a considerable smaller spin-orbit effects in the
conduction band cannot be directly
inferred from simple absorption/reflectance spectra.
Information whether the optically bright A exciton is associated with lower or upper conduction band
subband have been however supplied by extensive studies of the photoluminescence response of
different sc-TMD monolayers and under various conditions (such as analysis of the spectral response
to the in-plane magnetic field and including studies involving unusual configuration of the emitted
light with respect to the monolayer plane). It is now rather clear that MoSe2 monolayer is a material
with bright ground exciton state [36,37], contrary to WSe2 and WS2 for which the ground exciton
state is dark [37-40]. The relevant consequence of the existence of two types of materials, tentatively
named as 'bright' and 'darkish', is a significant difference in g-factor value for the lower energy
conduction band state. The spin and valley terms add up in 'bright' materials and compensate each
other in 'darkish' materials, leading to larger magnetic-field-induced splitting of lower conduction
state for 'bright' than 'darkish' materials.
In order to investigate the validity of this prediction, we will analyze the magneto-
reflectance spectra focusing on charged exciton resonance (CX) (assuming it is a negatively charged
state1), which appears as a weaker feature below the energy of a free neutral exciton A [42]. Typical
reflectivity spectra showing CX resonance for MoSe2, WSe2 and WS2 monolayers are presented in
Fig. 3. We will focus on the interpretation of data for MoSe2 and WS2 materials, considering them as
representatives of 'bright' and 'darkish' family. The CX resonance in WSe2 monolayer is very weak
and broad in our samples, making it difficult to analyze and interpret the data unambiguously. In the
absorption process leading to creation of CX, there is a single electron in the initial state, which at
low temperature occupies the lower energy conduction band state. In such case, thermal
redistribution of the occupation of this individual electronic state leads to polarization of the CX
absorption resonance at higher magnetic fields. The rate of the polarization degree increase is
directly indicative of the g-factor value corresponding to this individual state. In Boltzmann
approximation to Fermi-Dirac statistics, which is valid if the thermal energy is larger than Fermi
energy (()≫(cid:5)+), i.e., when the electron concentration is sufficiently small and effective mass is
large, what we expect in our remotely doped monolayers, the polarization degree in external
magnetic field is given by a formula:
-(cid:6)(cid:7)+-(cid:6)(cid:9),=./0ℎ2(cid:11)(cid:12)(cid:13)(cid:14)() 3= ./0ℎ4((cid:11)(cid:22)±(cid:11)(cid:21))(cid:12)(cid:13)(cid:14)
,-(cid:6)(cid:7)−-(cid:6)(cid:9)
5
where -(cid:6)(cid:7)/-(cid:6)(cid:9) is the absorption strength of CX resonance detected in s +/s
polarization, (cid:11)=(cid:11)(cid:22)±
(cid:11)(cid:21) is the g-factor of lower energy conduction band state and might be expressed by a sum or a
difference of spin and valley g-factors for bright or dark materials respectively, m B is Bohr magneton,
B is the value of magnetic field, k is Boltzmann constant and T is the effective temperature of the
electron gas. In case of MoSe2 monolayer the application of this formula is straightforward, as the CX
resonance simply splits with a g-factor (cid:11)67=−4.2±0.2 (same value as for neutral exciton
resonance (cid:11)7 =(cid:11)67) and the polarization degree clearly increases with raising magnetic field.
Consequently, one can directly estimate the value (cid:11)/). We will assume that the temperature of the
state of MoSe2 (cid:11)=1.84. The evolution of the CX resonance in WS2 appears to be much more
electron gas is equal to 10 K, taking into account weak heating effects of white light illumination of
the sample kept in ~ 4.2 K exchange gas. Then we obtain a g-factor value for lower energy conduction
complicated. The energy dependence on magnetic field for s +/s
components is apparently non-
linear (see Fig. 3(f)). This peculiar evolution originates, as discussed previously in literature [43-48] ,
from contribution of two different CX states to the feature observed in absorption-type spectra. The
existence of two CX states in 'darkish' materials is a consequence of spin alignment in conduction
sub-bands, which allows an excess electron from either K+ or K- valley to accompany the photo-
1 This assumption is justified by rather large energy distances of charged to neutral exciton observed
in our samples. Experiments on gated monolayers [41] show binding energies of negatively charged
excitons to be considerably larger those of positively charged excitons.
()
-
-
created electron-hole pair and form a bound CX state. As a result, the final configuration of two
conduction electrons may constitute a singlet (inter-valley) or triplet (intra-valley) state. In 'bright'
materials only a singlet state may be expected to be bound due to significant spin-spin (exchange)
interaction strength, when two parallel spin states occupy the same valley (hence are characterized
by the same pseudo-spin quantum number) for triplet state in bright materials. Therefore, the
absence of triplet CX state can be seen as a consequence of Pauli blocking mechanism. The singlet
and triplet configurations of conduction electrons in 'bright' and 'darkish' materials are presented in
Fig. 4. The magnetic field evolution of the CX state in 'darkish' WS2 may be accounted for if two
and zero-field splitting of 5 meV are considered [47], in combination with polarization effects
imposed by the thermal redistribution of population of the excess electron state. For the singlet state
transitions exhibiting the same g-factor value ((cid:11)67=−3.8; same as for the neutral exciton) value
of the charged exciton, the higher energy (cid:1)(cid:4) component accumulates the majority of oscillator
strength at higher fields, contrary to the triplet state, for which the lower energy (cid:1)(cid:2) component gets
enhanced. Overall, due to small zero field splitting with respect to the linewidths of transitions (~ 20
meV) the CX features in 'darkish' WS2 gives impression of a single resonance, but upon closer
inspection it becomes clear that both singlet and triplet CX states are involved and careful analysis
allows estimation of the oscillator strength of (cid:1)(cid:2)/(cid:1)(cid:4) components (see Fig. 3(g)) and eventually
factor (cid:11)=1.08.
establish g-factor of the lower energy conduction electron by describing the increase of polarization
degree with aforementioned Boltzmann-type formula (see Fig. 3(h)). As a result, continuing the
assumption of 10 K temperature of electron gas, we obtain the value of the lower conduction state g-
In order to translate the parameters extracted from experiments into the spin and valley
terms appearing in our model, we will need to make certain assumptions. One can assume, for
instance, that the spin and valley g-factors are equal for MoSe2 and WS2 monolayers, which will lead
to a simple linear equation:
(cid:11)(cid:22)−(cid:11)(cid:21) =1.08'→>(cid:11)(cid:22)=0.38
>(cid:11)(cid:22)+(cid:11)(cid:21) =1.84
(cid:11)(cid:21) =1.46'
An alternative method is to assume that the value of the spin term is the same as for a free electron
in vacuum ((cid:11)(cid:22)=1, in our convention) and then obtain the values of the valley terms for 'bright'
MoSe2 and 'darkish' WS2 monolayers,
>(cid:11)(cid:21) =2.08, for 'bright' MoSe2 monolayers
(cid:11)(cid:21) =0.84, for 'darkish' WS2 monolayers'
The results of both treatments of experimental data are summarized in Tab. 1. Although these
estimations are very rough, they quite certainly indicate that the valley term is a substantial part of a
cohesive description of the magneto-optical properties of TMDC monolayers and cannot be
neglected.
Our description of the magnetic field evolution of the electronic states may be further
exploited to shed more light onto the magneto-luminescence spectra. As demonstrated in Fig. 5, the
PL spectra of MoSe2 monolayers are rather simple, showing neutral and charged exciton lines (X and
CX), which split with g-factors values mimicking those observed in absorption-type spectra. Both
resonances are polarized in higher fields so that the lower energy ((cid:1)(cid:2)) component gains in intensity,
most likely due to thermal distributions of excitons between field-split states. The 'darkish' WS2 and
WSe2 monolayers exhibit much more complicated PL response. The neutral and charged exciton lines
(X and CX) are accompanied by a lower energy multi-peak PL band. It has been argued that the lines
forming this band originate, perhaps partially, from recombination of dark exciton states via different
brightening mechanisms [37,49,50]. A rather outstanding fingerprint of these additional lines is that
they exhibit large g-factor values. Tab. 2 presents the g-factor values for all distinguishable lines in PL
spectra of MoSe2, WSe2 and WS2 monolayers. Notably, the lines forming low energy band in WSe2
and WS2 exhibit g-factors from 4 up to 13.5 in absolute value, in most cases significantly larger than
g-factors of free excitonic resonances. The origin of enhanced magnetic field splitting of lower energy
PL lines in 'darkish' materials remains unclear. However, our description of magnetic effects indicates
that it is plausible that larger g-factors are related to recombination of dark exciton states.
Conceptually, dark excitons may be brightened due to mechanisms mixing states from K+/K- valleys
hence allowing intra-valley recombination or one could consider inter-valley recombination mediated
e. g. by phonons to preserve carrier momentum or defect states which are known to be particularly
pronounced in 'darkish' TMDc mono- and multilayers [51-54]. Both types of processes are illustrated
in Fig. 6. Employing our estimation of parameters, we can estimate the g-factor values of such optical
transitions in a following way:
V(cid:11)WXYZ[ =2%(cid:11)(cid:23)(cid:24)+2(cid:11)(cid:21)&≈10
(cid:11)WXY[\ =2%(cid:11)(cid:23)(cid:24)+2(cid:11)(cid:22)&≈8'
assuming the following values of our parameters: (cid:11)(cid:23)(cid:24) ≈2,(cid:11)(cid:21) ≈1.5,(cid:11)(cid:22) ≈1. Notably large g-factors
(about -8) have been recently reported for intra valley dark excitons in WSe2 monolayer
encapsulated in hBN [55]. Our simple consideration takes into account recombination of neutral
complexes. More complicated transitions could be realised with charged excitons, involving for
instance shake-up process with elevation of an excess electron from lower to upper conduction band
state. That could potentially lead to peculiar polarisation properties, when higher energy line gains in
intensity at higher fields, as is observed, e. g. for lines A1 in WSe2 monolayer and A2 in WS2
monolayer (see Fig. 5).
In summary, we have presented a collection of magneto-optical spectra, based on
reflectance and PL measurements, of three sc-TMD compounds: MoSe2, WSe2 and WS2. This data
helped us to develop a simple model of three additive terms (valley, spin and orbital contributions),
which we used to describe the linear-with-magnetic-field (Zeeman) energy shifts of electronic states
in fundamental conduction and valence sub-bands. We have demonstrated the significance of the
valley term by analysing the magnetic-field-induced increase of polarisation degree of CX state in
absorption-type spectra. Particularly, we have observed a clear signature of singlet and triplet CX
states in 'darkish' WS2 monolayers. The values of the g-factors of lower energy conduction band state
obtained for MoSe2 and WS2 materials allowed us to estimate the value of the valley term and
therefore have a tentative description of the evolution of all the electronic states involved in
fundamental optical transitions. As a result of this analysis, we have proposed a reasoning, which
sheds light onto the expatiation of large g-factor values for lower energy PL lines in 'darkish'
monolayers by attribution them to dark states, which become partially allowed through various
brightening mechanisms.
Acknowledgements
We kindly thank J. Marcus for providing a piece of WSe2 crystal used and acknowledge
helpful discussions with A. Slobodeniuk and D. Basko. The authors acknowledge the support from the
European Research Council (MOMB project No. 320590), the EC Graphene Flagship project (No.
604391) and the ATOMOPTO project (TEAM programme of the Foundation for Polish Science co-
financed by the EU within the ERDFund). The support of LNCMI-CNRS, a member of the European
Magnetic Field Laboratory is also acknowledged.
The authors of this manuscript declare no competing financial interest.
APPENDIX: MATERIALS AND METHODS
1. Sample preparation by mechanical exfoliation
Monolayer MoSe2, WSe2 and WS2 flakes were obtained by mechanical exfoliation
(polydimethylsiloxane-based technique [56]) of bulk crystals in 2H phase. Crystals from different
sources were used including commercial suppliers (HQ Graphene). Exfoliated flakes were deposited
on Si/SiO2 substrates and initially inspected under an optical microscope to determine the thickness
of flakes based on their optical contrast. Eventually, the characteristic PL response from measured
flakes unambiguously confirms their monolayer thickness.
2. Experimental setup and methods
The magneto-optical experiments were done in high magnetic field facility in Grenoble.
Specially designed probes were used with resistive magnets (supplying magnetic field up to 30 T with
50 mm Bohr radius) at low temperatures (via helium exchange gas) to measure reflected or emitted
light from the samples. The fiber based set-up allowed focalization of the incoming light to a spot of a
about ten micrometers in size. Piezo-positioners were used for x-y-z movement of the sample. A
halogen lamp provided illumination for reflectance measurements and 514.5 nm Ar+ laser line for
photoluminescence investigations. A quarter-waveplate followed by a polarizer was mounted in a
fixed position before the detection fiber entrance and (cid:1)(cid:2)/(cid:1)(cid:4) helicity was determined by the
magnetic field polarity. The reflectivity contrast was obtained by measuring the spectra on two
locations: on the flake and on the nearby Si/SiO2 substrate region, then calculated as:
^((cid:5))=^_'\aZ((cid:5))−^bcdbY[\YZ((cid:5))
^_'\aZ((cid:5))+^bcdbY[\YZ((cid:5))
The reflectivity spectra were reproduced by using a transfer matrix method including Lorentzian
contributions to account for resonances observed in the experimental spectra. The data were fitted
with such phenomenological curves to establish the energy and oscillator strength of transitions
separately in spectra measured in (cid:1)(cid:2)/(cid:1)(cid:4) polarizations.
REFERENCES
[1] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Atomically Thin MoS2: A New Direct-Gap
Semiconductor, Phys. Rev. Lett. 105, 136805 (2010).
[2] A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, F. Wang, Emerging
photoluminescence in monolayer MoS2, Nano. Lett. 10 (4), 1271–1275 (2010).
[3] W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P. H. Tan, G. Eda, Evolution of electronic
structure in atomically thin sheets of WS2 and WSe2, ACS Nano 7 (1), 791–797 (2013).
[4] Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan, Z. Liu, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin,
H. T. Jeng, S.-K. Mo, Z. Hussain, A. Bansil, Z.-X. Shen, Direct observation of the transition from indirect
to direct bandgap in atomically thin epitaxial MoSe2, Nature Nanotechnology 9, 111–115 (2014).
[5] I. G. Lezama, A. Arora, A . Ubaldini, C. Barreteau, E. Giannini, M. Potemski, A. F. Morpurgo,
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2, Nano. Lett. 15 (4), 2336–2342 (2015).
[6] Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi,
H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, T. F. Heinz, Valley Splitting and Polarization by the
Zeeman Effect in Monolayer MoSe2, Phys. Rev. Lett. 113, 266804 (2014).
[7] A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, A. Imamoglu, Valley Zeeman effect in
elementary optical excitations of monolayer WSe2, Nature Physics 11, 141–147 (2015).
[8] G. Wang, L. Bouet, M. M. Glazov, T. Amand, E. L. Ivchenko, E. Palleau, X. Marie, B. Urbaszek,
Magneto-optics in transition metal diselenide monolayers, 2D Materials 2, 034002 (2015).
[9] G. Aivazian, Z. Gong, A. M. Jones, R.-L. Chu, J. Yan, D. G. Mandrus, C. Zhang, D. Cobden, W. Yao,
X. Xu, Magnetic control of valley pseudospin in monolayer WSe2, Nature Physics 11, 148 (2015).
[10] D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, D. C. Ralph,
Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2, Phys. Rev. Lett. 114, 037401
(2015).
[11] A. A. Mitioglu, P. Plochocka, Á. Granados del Aguila, P. C. M. Christianen, G. Deligeorgis,
S. Anghel, L. Kulyuk, and D. K. Maude, Optical Investigation of Monolayer and Bulk Tungsten
Diselenide (WSe2) in High Magnetic Fields, Nano Lett. 15 (7), 4387–4392 (2015).
[12] A. Arora, R. Schmidt, R. Schneider, M. R. Molas, I. Breslavetz, M. Potemski, R. Bratschitsch,
Valley Zeeman Splitting and Valley Polarization of Neutral and Charged Excitons in Monolayer MoTe2
at High Magnetic Fields, Nano. Lett. 16 (6), 3624–3629 (2016).
[13] A. V. Stier, K. M. McCreary, B. T. Jonker, J. Kono, S. A. Crooker, Exciton diamagnetic shifts and
valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla, Nature Communications 7, 10643
(2016).
[14] G.-B. Liu, D. Xiao, Y. Yao, X. Xu, W. Yao, Electronic structures and theoretical modelling of two-
dimensional group-VIB transition metal dichalcogenides, Chem. Soc. Rev. 44, 2643-2663 (2015).
[15] Z. Y. Zhu, Y. C. Cheng, U. Schwingenschlögl, Giant spin-orbit-induced spin splitting in two-
dimensional transition-metal dichalcogenide semiconductors, Phys. Rev. B 84, 153402 (2011).
[16] A. Ramasubramaniam, Large excitonic effects in monolayers of molybdenum and tungsten
dichalcogenides, Phys Rev B 86, 115409 (2012).
[17] D. Xiao, G.-B. Liu, W. Feng, X. Xu, W. Yao, Coupled Spin and Valley Physics in Monolayers of
MoS2 and Other Group-VI Dichalcogenides, Phys. Rev. Lett. 108, 196802 (2012).
[18] A. Kumar, P. K. Ahluwalia, Electronic structure of transition metal dichalcogenides monolayers
1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors,
Eur. Phys. J. B 85, 186 (2012).
[19] T. Cheiwchanchamnangij, W. R. L. Lambrecht, Quasiparticle band structure calculation of
monolayer, bilayer, and bulk MoS2, Phys Rev B 85, 205302 (2012).
[20] G.-B. Liu, W.-Y. Shan, Y. Yao, W. Yao, D. Xiao, Three-band tight-binding model for monolayers
of group-VIB transition metal dichalcogenides, Phys Rev B 88, 85433 (2013).
[21] K. Kośmider, J. W. González, J. Fernández-Rossier, Large spin splitting in the conduction band of
transition metal dichalcogenide monolayers, Phys Rev B 88, 245436 (2013).
[22] A. Molina-Sánchez, D. Sangalli, K. Hummer, A. Marini, L. Wirtz, Effect of spin-orbit interaction
on the optical spectra of single-layer, double-layer, and bulk MoS2, Phys Rev B 88, 45412 (2013).
[23] A. Kormányos, G. Burkard, M. Gmitra, J. Fabian, V. Zólyomi, N. D. Drummond, V. Fal'ko, k · p
theory for two-dimensional transition metal dichalcogenide semiconductors, 2D Mater. 2, 22001
(2015).
[24] J. M. Riley, F. Mazzola, M. Dendzik, M. Michiardi, T. Takayama, L. Bawden, C. Granerød,
M. Leandersson, T. Balasubramanian, M. Hoesch, T. K. Kim, H. Takagi, W. Meevasana, Ph. Hofmann,
M. S. Bahramy, J. W. Wells, P. D. C. King, Direct observation of spin-polarized bulk bands in an
inversion-symmetric semiconductor, Nat. Phys. 10, 835-839 (2014).
[25] J. A. Wilson, A. D. Yoffe, The transition metal dichalcogenides discussion and interpretation of the
observed optical, electrical and structural properties, Adv. Phys. 18, 193–335 (1969).
[26] M. Koperski, M. R. Molas, A. Arora, K. Nogajewski, A. O. Slobodeniuk, C. Faugeras, M. Potemski,
Optical properties of atomically thin transition metal dichalcogenides: observations and puzzles,
Nanophotonics 6, 1289 (2017).
[27] M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S.-K. Mo, Z.
Hussain, Z.-X. Shen, F. Wang, S. G. Louie, M. F. Crommie, Giant bandgap renormalization and
excitonic effects in a monolayer transition metal dichalcogenide semiconductor, Nature Materials 13,
1091–1095 (2014).
[28] A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, O. B. Aslan, D. R. Reichman, M. S.
Hybertsen, T. F. Heinz, Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2,
Phys. Rev. Lett. 113, 076802 (2014).
[29] K. He, N. Kumar, L. Zhao, Z. Wang, K. F. Mak, H. Zhao, J. Shan, Tightly Bound Excitons in
Monolayer WSe2, Phys. Rev. Lett. 113, 026803 (2014).
[30] B. Zhu, X. Chen, X. Cui, Exciton Binding Energy of Monolayer WS2, Sci. Rep. 5, 9218 (2015).
[31] H. M. Hill, A. F. Rigosi, C. Roquelet, A. Chernikov, T. C. Berkelbach, D. R. Reichman, M. S.
Hybertsen, L. E. Brus, T. F. Heinz, Observation of Excitonic Rydberg States in Monolayer MoS2 and
WS2 by Photoluminescence Excitation Spectroscopy, Nano Lett 15 (5), 2992–2997 (2015).
[32] A. Chernikov, A. M. van der Zande, H. M. Hill, A. F. Rigosi, A. Velauthapillai, J. Hone, T. F. Heinz,
Electrical Tuning of Exciton Binding Energies in Monolayer WS2, Phys Rev Lett 115, 126802 (2015).
[33] T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, J. Feng, Valley-
selective circular dichroism of monolayer molybdenum disulphide, Nature Commun. 3, 887 (2012).
[34] K. F. Mak, K. He, J. Shan, T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical
helicity, Nature Nanotechnology 7, 494–498 (2012).
[35] T. Smoleński, M. Goryca, M. Koperski, C. Faugeras, T. Kazimierczuk, A. Bogucki, K. Nogajewski,
P. Kossacki, M. Potemski, Tuning Valley Polarization in a WSe2 Monolayer with a Tiny Magnetic Field,
Phys. Rev. X 6, 021024 (2016).
[36] A. Arora, K. Nogajewski, M. Molas, M. Koperski, M. Potemski, Exciton band structure in layered
MoSe2: from a monolayer to the bulk limit, Nanoscale 7, 20769-20775 (2015).
[37] M. R. Molas, C. Faugeras, A. O. Slobodeniuk, K. Nogajewski, M. Bartos, D. M. Basko, M. Potemski,
Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides,
2D Mater. 4, 021003 (2017).
[38] Z. Ye, T. Cao, K. O'Brien, H. Zhu, X. Yin, Y. Wang, S. G. Louie, X. Zhang, Probing excitonic dark
states in single-layer tungsten disulphide, Nature 513 214–218 (2014).
[39] X.-X. Zhang, Y. You, S. Y. F. Zhao, T. F. Heinz, Experimental Evidence for Dark Excitons in
Monolayer WSe2, Phys. Rev. Lett. 115, 257403 (2015).
[40] A. Arora, M. Koperski, K. Nogajewski, J. Marcus, C. Faugeras, M. Potemski, Excitonic resonances
in thin films of WSe2: from monolayer to bulk material, Nanoscale 7, 10421-10429 (2015).
[41] A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus,
D. Xiao, W. Yao, X. Xu, Optical generation of excitonic valley coherence in monolayer WSe2, Nature
Nanotechnology 8, 634–638 (2013).
[42] J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao,
W. Yao, X. Xu, Electrical control of neutral and charged excitons in a monolayer semiconductor,
Nature Commun. 4, 1474 (2013).
[43] A. Boulesbaa, B. Huang, K. Wang, M. –W. Lin, M. Mahjouri-Samani, C. Rouleau, K. Xiao, M. Yoon,
B. Sumpter, A. Puretzky, D. Geohegan, Observation of two distinct negative trions in tungsten
disulfide monolayers, Phys. Rev. B 92, 115443 (2015).
[44] A. Singh, K. Tran, M. Kolarczik, J. Seifert, Y. Wang, K. Hao, D. Pleskot, N. M. Gabor, S. Helmrich,
N. Owschimikow, U. Woggon, X. Li, Long-Lived Valley Polarization of Intravalley Trions in Monolayer
WSe2, Phys. Rev. Lett. 117, 257402 (2016).
[45] G. Plechinger, P. Nagler, A. Arora, R. Schmidt, A. Chernikov, A. Granados del Águila,
P. C. M. Christianen, R. Bratschitsch, C. Schüller, T. Korn, Trion fine structure and coupled spin–valley
dynamics in monolayer tungsten disulfide, Nature Communications 7, 12715 (2016).
[46] E. Courtade, M. Semina, M. Manca, M. M. Glazov, C. Robert, F. Cadiz, G. Wang, T. Taniguchi,
K. Watanabe, M. Pierre, W. Escoffier, E. L. Ivchenko, P. Renucci, X. Marie, T. Amand, B. Urbaszek,
Charged excitons in monolayer WSe2 : Experiment and theory, Phys. Rev. B 96, 085302 (2017).
[47] D. Vaclavkova, J. Wyzula, K. Nogajewski, M. Bartos, A. O. Slobodeniuk, C. Faugeras, M. Potemski,
M. R. Molas, Singlet and triplet trions in WS2 monolayer encapsulated in hexagonal boron nitride,
arXiv:1802.05538 (2018).
[48] M. R. Molas, K. Nogajewski, A. O. Slobodeniuk, J. Binder, M. Bartos, M. Potemski, The optical
response of monolayer, few-layer and bulk tungsten disulfide, Nanoscale 9, 13128-13141 (2017).
[49] X.-X. Zhang, T. Cao, Z. Lu, Y.-C. Lin, F. Zhang, Y. Wang, Z. Li, J. C. Hone, J. A. Robinson, D. Smirnov,
S. G. Louie, T. F. Heinz, Magnetic brightening and control of dark excitons in monolayer WSe2, Nature
Nanotechnology 12, 883–888 (2017).
[50] A. O. Slobodeniuk, D. M. Basko, Spin–flip processes and radiative decay of dark intravalley
excitons in transition metal dichalcogenide monolayers, 2D Mater. 3, 035009 (2016).
[51] M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki,
M. Potemski, Single photon emitters in exfoliated WSe2 structures, Nature Nanotechnology 10, 503-
506 (2015).
[52] A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, A. Imamoğlu, Optically active quantum
dots in monolayer WSe2, Nature Nanotechnology 10, 491–496 (2015).
[53] Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-Jia Wei, X. Ding, Q. Zhang, W. Yao, X. Xu,
C.-Y. Lu, J.-W. Pan, Single quantum emitters in monolayer semiconductors, Nature Nanotechnology
10, 497–502 (2015).
[54] C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, A. Nick Vamivakas, Voltage-
controlled quantum light from an atomically thin semiconductor, Nature Nanotechnology 10, 507-511
(2015).
[55] C. Robert, T. Amand, F. Cadiz, D. Lagarde, E. Courtade, M. Manca, T. Taniguchi,
K. Watanabe, B. Urbaszek, X. Marie, Fine structure and lifetime of dark excitons in transition metal
dichalcogenide monolayers, Phys. Rev. B 96, 155423 (2017).
[56] A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. van der Zant,
G. A. Steele, Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping, 2D
Materials 1, 011002 (2014).
FIGURES
FIG. 1. Magneto-reflectivity spectra, measured with circular polarization resolution (red/blue curves
corresponding to e(cid:2)/e(cid:4) polarization, respectively) under excitation with linearly polarised laser light (514 nm),
are shown in the energy range of free neutral exciton resonances A and B for (a-b) MoSe2, (e-f) WSe2 and (i-j)
WS2 monolayers. The energies of resonances are obtained by fitting the spectra with curves derived by transfer
matrix method including Lorentzian contributions to account for excitonic resonances. The magnetic field
evolution of the energy of s +
(blue dots) components are presented for (c-d) MoSe2, (g-h)
WSe2 and (k-l) WS2 monolayers. The open circles represent a mean value of the energy of both components
(fe(cid:7)+fe(cid:9))/g, to demonstrate that no detectable diamagnetic shift (term ∝ig) is seen. The values of the g-
factors for each transition, obtained by fitting the field-dependent energy fe(cid:7)−fe(cid:9) with linear function
jkii, are presented in tables.
(red dots) and s
-
FIG. 2. Scheme of the valley, spin and orbital contributions to the energies of electronic levels is presented for
fundamental sub-bands relevant for the optical transitions at K point of the Brillouin zone, which are observed
in absorption-type (and emission) spectra. The upper panel shows the evolution of states in the conduction
band, the middle panel shows the evolution of states in the valence band and the bottom panel shows the total
energy variation (when all contributions are taken into account) for all states involved in optical transition,
which are marked with red/blue arrows for s +/s
active optical excitations, respectively.
-
FIG. 3. Magneto-reflectivity spectra of (a) MoSe2, (d) WSe2 and (e) WS2 monolayers measured with circular
polarization resolution (red curves for e(cid:2) polarization and blue curves for e(cid:4) polarization) are presented in the
energy region corresponding to CX state (which appears on the lower energy side of the neutral exciton A). The
oscillator strength for (b) MoSe2 and (g) WS2 materials is obtained by fitting the curves using transfer matrix
method with Lorentzian contributions. In case of MoSe2, a single transition is used which corresponds to a
singlet state of CX. For WS2, it was necessary to include two transitions, which we attribute to singlet (CXs) and
triplet (CXt) states of CX, with a zero-field splitting (5meV) between them (see main text for further details). For
both materials (c and h) the evolution of the polarization degree with magnetic field is presented. The data are
fitted with a function (black solid curves) based on Boltzmann occupation of the electronic states, as described
in the main text.
FIG. 4. A scheme presenting possible configurations of electrons and a hole forming CX complexes at low
temperatures for 'bright' and 'darkish' sc-TMD materials. The thermalisation effects are demonstrated in the
presence of the magnetic field (following the simple additive model described in the main text), leading to an
enhancement in higher fields of e(cid:2)/e(cid:4) red/blue transitions involving carriers marked with red/blue dots. The
triplet state for 'bright' materials is most likely not bound due the parallel configurations of electrons occupying
the lower energy conduction state in the same valley.
TAB. 1. Experimentally estimated values of the three terms used to describe the magnetic field impact on the
energy of individual states in fundamental sub-bands of sc-TMD monolayers are presented. Two approaches
are used, based on different assumptions. In the first case, it is assumed that valley and spin terms are the
same for MoSe2 and WS2 materials. In the second case, the spin term is fixed to the value of the free electron in
vacuum (gS = 1). Independently of the approach, the valley term is found to provide a significant contribution to
the energy of individual states and its value can be estimated to be gV = 1.5 ± 0.5.
FIG. 5. A collection of magneto-PL spectra detected in circular polarization resolution (red lines and dots for
monolayers. The energy of distinguishable lines is presented as a function of magnetic field ((b) for MoSe2, (e)
for WSe2 and (h) for WS2 monolayers) and the g-factors are established (see Tab. 2). The open circles
e(cid:2)polarization/blue lines and dots for e(cid:2)polarization) is presented for (a) MoSe2, (d) WSe2 and (g) WS2
represented an arithmetic mean value of the energy of e(cid:2) and e(cid:4) polarized transitions (flmno =
pg(fe(cid:7)+fe(cid:9))). No impact of terms quadratic with magnetic field (∝ig) is observed. The polarization degree
increase with magnetic field for free excitonic states is also presented (for (c) MoSe2, (f) WSe2 and (i) WS2
monolayers), which is indicative of the electron gas effective temperature (about 10 K) under laser light
illumination.
TAB. 2. The g-factor values are presented for PL lines of MoSe2, WSe2 and WS2 monolayers. The values for free
exciton states correspond well to those obtained from absorption-type experiments. Notably, the g-factors of
lower energy PL lines in tungsten based compounds (representatives of 'darkish' sub-class of materials) are
significantly larger in absolute value that g-factors of free exciton states (around 4) and reach values as high as
13.
FIG 6. A schematic illustration of forbidden transition in 'darkish' sc-TMD monolayers (such as WSe2 and WS2).
(a) The momentum forbidden transitions involve processes with inter-valley recombination, which could be
partially allowed considering, e. g. transitions with phonons providing matching momentum. Another type of
forbidden transition constitutes (b) inter-valley process, which do not conserve spin. These can be brightened
either by mixing of states from different valleys or by considering charged states with recombination realised
through spin-flip processes.
|
1606.08452 | 2 | 1606 | 2016-12-12T09:52:42 | Probing Majorana and Andreev Bound States with Waiting Times | [
"cond-mat.mes-hall"
] | We consider a biased Normal-Superconducting junction with various types of superconductivity. Depending on the class of superconductivity, a Majorana bound state may appear at the interface. We show that this has important consequences on the distribution of waiting times of electrons flowing out of such an interface. Therefore, the waiting time distribution is shown to be a clear fingerprint of Majorana bound state physics and may be considered as an experimental signature of its presence. | cond-mat.mes-hall | cond-mat | epl draft
6
1
0
2
c
e
D
2
1
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
2
5
4
8
0
.
6
0
6
1
:
v
i
X
r
a
Probing Majorana and Andreev Bound States with Waiting Times
D. Chevallier1, M. Albert2 and P. Devillard3
1 Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
2 Universit´e Cote d'Azur, CNRS, INLN, France
3 Aix Marseille Univ, Univ Toulon, CNRS, CPT, Marseille, France
PACS 02.50.Ey -- Stochastic processes
PACS 72.70.+m -- Noise processes and phenomena
PACS 74.50.+r -- Superconductivity-Tunneling phenomena
Abstract -- We consider a biased Normal-Superconducting junction with various types of super-
conductivity. Depending on the class of superconductivity, a Majorana bound state may appear
at the interface. We show that this has important consequences on the statistical distribution of
time delays between detection of consecutive electrons flowing out of such an interface, namely the
waiting time distribution. Therefore, this quantity is shown to be a clear fingerprint of Majorana
bound state physics and may be considered as an experimental signature of its presence.
Introduction. -- During the last two decades, Majo-
rana fermionic states in condensed matter physics, have
received a lot of interest because of their exotic properties
such as non-Abelian statistics, that open the perspective
of using them for quantum computation. These exotic
states have been studied extensively in various systems
[1 -- 18] with among them, a conceptually simple one made
with a semiconducting nanowire of InAs or InSb, with
strong spin-orbit coupling, subjected to an external Zee-
man field and in the proximity of an s-wave supercon-
ductor (SC) [3, 4, 19, 20].
In this situation, a Majorana
Bound State (MBS) may appear at the interface of a nor-
mal/superconducting junction, under proper conditions,
and strongly affects the electronic conduction properties
(see Fig. 1). Several experiments have reported the ob-
servation of a zero-bias conductance peak in such physical
setups, which are in good qualitative agreement with all
theoretical predictions based on Majorana physics so far
but still not fully consistent with the predicted conduc-
tance and magnetic field value needed for the existence of
a MBS [21 -- 24]. Therefore, several works have been con-
ducted in order to understand these inconsistencies based
on alternative interpretations by including other physi-
cal processes [25 -- 29]. However, a clear consensus is still
lacking mostly because of the absence of an experimental
smoking gun for Majoranas. Generally these MBS appear
in hybrid junction by tuning one of the parameter of the
system (i.e. phase difference or Zeeman field) in a topo-
logical phase. Along this transition, these states mutate
from Andreev Bound State (ABS) in the non-topological
phase to MBS in the topological one and understanding
their differences is thus of fundamental importance in or-
der to distinguish them. So far, many efforts have focused
on the relation and the evolution of ABS onto MBS by
tuning the system parameters [8, 30, 31] but less on their
own properties [20, 32 -- 34] and the consequences on phys-
ical observables which is the purpose of this contribution.
Recently, an intriguing feature due to MBS was identi-
fied in Ref. [35] and named selective equal-spin Andreev re-
flection (SESAR). The presence of a MBS drastically mod-
ifies Andreev reflection and leads to a spin polarization of
the current as well as to interesting correlations between
different spin components which are visible in the zero fre-
quency noise [36] for instance. However, such fingerprints
are based on the possibility to observe fine quantitative dif-
ferences between spin resolved current-current cross cor-
relations which seems to be complicated experimentally in
the present situation. In this letter, we show that a very
clear qualitative difference is visible in the Waiting Time
Distribution (WTD) of electrons flowing out of the in-
terface making it an interesting and alternative signature
of MBS. The WTD is the statistical distribution of time
delay between the detection of two consecutive electrons
and has been shown to be a very informative and power-
ful quantity for understanding correlations in mesoscopic
quantum conductors [37 -- 50].
Model. -- We consider two types of hybrid junctions
as depicted on Fig. 1 at zero temperature. The first
p-1
Andreev reflection takes place, meaning that a hole with
a given spin is reflected as an electron with an opposite
spin leading to the presence of ABS in such a junction
(See Fig. 1 a)). Replacing the s-wave superconductor by
a topological one strongly changes scattering properties
and especially the Andreev reflection. If the Zeeman field
is strong enough to enter the topological phase (Vz ≥ ∆),
the p-wave pairing dominates and the Andreev reflection
is spin selective [35] meaning that a hole with spin up
is reflected as an electron with the same spin and a hole
with spin down is normally reflected as a hole with spin
down (See Fig. 1 b)). More precisely, the presence of a
MBS in the latter case, leads to a spin scattering sym-
metry breaking. There is a special spin orientation n,
called the Majorana's polarization, along which electrons
or holes are totally Andreev reflected as a hole or electron
respectively with spin conservation whereas particles with
opposite spin are normally reflected. This is the essence
of SESAR effect [35] that leads to spin polarized current
in this kind of hybrid junction. However, this precise di-
rection cannot be determined from first principles and,
in general, incoming particles are not spin oriented along
this direction which leads to formally more complicated
scattering although everything can be understood by de-
composing the state onto this spin basis.
In order to evaluate the WTD and use it as a tool to
probe the scattering properties of ABS and MBS in hy-
brid junctions we now need the expressions of the different
outgoing scattering states. In such a junction, the inter-
face plays an important role on the transmission which
gives a finite width to the states [51 -- 53]. In Appendix A,
we discuss this effect. However, for the sake of simplic-
ity we focus on the zero temperature and perfect Andreev
reflection limit and following Ref. [35, 48] write down the
different out-going quantum states.
Outgoing states for N/S junction. -- In this case,
the interface acts as a perfect Andreev mirror where all the
holes with a given spin are Andreev reflected as electrons
with opposite spin [48]
kV(cid:89)
k=0
D. Chevallier et al.
Fig. 1: (color online) Schematic picture of the Andreev re-
flection processes in the two different junctions. a) Normal-
(trivial)Superconducting junction: a hole with spin ↑n (↓n)
is converted into an electron with opposite spin ↓n (↑n) and
b) Normal-(topological)Superconducting junction: a hole with
spin ↑n is converted into an electron with same spin ↑n and a
hole with spin ↓n is reflected as a hole also with the same spin
↓n. In the first case n denotes any possible direction whereas in
the second case a Majorana bound state appears at the inter-
face and sets a special spin direction n for scattering (see text).
In both cases a bias voltage eV is imposed and brings the su-
perconducting chemical potential µS above the Fermi energy
EF of the normal metal with the restriction that eV (cid:28) ∆ the
superconducting gap.
one is a normal metal(N)/s-wave superconductor(S) car-
rying an ABS at the interface and the second one is a
N/topological superconductor(TS) where the topological
junction is made of a Rashba nanowire in proximity with
an s-wave superconductor and in presence of Zeeman field
Vz carrying a MBS at each boundary. However, we as-
sume the nanowire to be long enough to decouple the two
MBS. In both situations, the Fermi energy of the normal
metal is EF , the superconducting gap is ∆ and the su-
perconducting chemical potential µS is biased in such a
way that EF = µS − eV and eV (cid:28) ∆ as shown on Fig.
1. As a consequence, a stream of non-interacting holes
is approaching the interface from the Normal part where
it is scattered as a coherent superposition of electron and
holes. This incoming scattering state reads
kV(cid:89)
k=0
ψin(cid:105) =
ck,nck,−n0(cid:105),
(1)
ψABS
out (cid:105) =
†
−k,−nc
c
†
−k,n0(cid:105).
(2)
where ck,n is the destruction operator of electron with mo-
mentum k, energy E = ¯hvFk and spin orientation n (or
creation of holes with opposite properties), 0(cid:105) stands for
the Fermi sea filled with states of energies up to µs and
kV = eV /¯hvF with vF the Fermi velocity. So far, n de-
notes any unitary vector and not necessary z or x for in-
stance. Below we will connect it to the polarization axes
of the MBS but up to now this is just a choice of basis. It
is important to note that spin components ↑z / ↓z or more
generally ↑n / ↓n are equally distributed namely the in-
coming quantum state is isotropic in spin space. The key
difference between these two junctions is how Andreev re-
flection occurs.
In the case of a NS junction, the usual
Again, this quantum state is isotropic in spin space and
simply corresponds to a stream of one-dimensional free
electrons with energies between µs and µs + eV and two
possible spin states (two channels of free fermions).
Outgoing states for N/TS junction. -- The pres-
ence of the MBS deeply affects the outgoing state. As
mentioned before, the key point is that a hole with a spin
n is totally reflected as an electron with the same spin
whereas a spin −n hole is subjected to perfect specular re-
flection with the same spin as well. It is therefore simpler
to write the outgoing state in the Majorana polarization
frame which reads
p-2
a)SNb)NTSMF Probing Majorana and Andreev Bound States with Waiting Times
kV(cid:89)
k=0
ψMBS
out (cid:105) =
c
†
−k,nc−k,−n0(cid:105),
(3)
where it is now obvious that the outgoing stream of elec-
trons is totally spin-polarized in the n direction. There-
fore, if one were able to measure the electronic current in
this spin direction, one would get the result of a perfect
single quantum channel. On the contrary, if one mea-
sures it in a random direction, for instance z, one would
measure partition noise just because the spin operators
Sz does not commute with Sn.
In that sense, such an
experiment is very similar to the so called Stern and Ger-
lach historical experiment as we will discuss later. Apart
from this remark the many body state can be simply ob-
†
n with the proper lin-
tained from (3), by replacing the c
†
↓ of the right basis. This can
ear combination of c
be done using the scattering matrix obtained in [35] de-
pending on the value of the Zeeman field Vz. However,
in the simple case where the Zeeman field is large com-
pared to the superconducting gap, the Majorana is fully
polarized in the z-direction which means that n and z are
the same. Another simple case is right at the topolog-
ical transition when the Zeeman field is just above the
). Finally, it is im-
gap where c
portant to note that in the non-topological case, namely
when Vz (cid:28) ∆, the outgoing state behaves like in the s-
wave junction (usual Andreev reflection on an ABS) [35]
and along the transition, the scattering matrix is not con-
tinuous.
†
−k,↑z
2 (c
†
−k,↓z
+ c
†
↑ and c
†
−k,↑ n
= 1√
Waiting time distribution. -- We now turn to the
calculation of the WTD. To do so, we need to specify the
detection process. A time-resolved single electron detector
is placed far away from the interface and is assumed to be
sensitive to electrons only with energy above the super-
conducting chemical potential µS. In addition the detec-
tor can be spin selective or not. Following Ref. [46,48] the
WTD is obtained from the Idle Time Probability (ITP),
namely the probability of not detecting any electron dur-
ing a time slot τ . The precise definition of it depends on
the detector capabilities. Without spin filtering it reads
(cid:82) x0+vF τ
Π(τ ) = (cid:104)ψout : e
−Q↑,E>µs :: e
−Q↓,E>µs : ψout(cid:105),
(4)
where : ··· : stands for the normal ordering and Qσ,E>µs =
c†
σ(x)cσ(x)Θ(E − µS) dx is nothing else than the
x0
probability of presence of a charge Q during a time slot
τ with E > µS and spin projection σ =↑ / ↓ along a
given direction (eg x, z...). In Appendix B, we discuss in
more details the derivation of Q and Π depending on the
applied filtering, energy or/and spin. In the case of spin
filtered detection (for instance spin up with respect to a
given direction), this quantity is
Π(τ ) = (cid:104)ψout : e
−Q↑,E>µs : ψout(cid:105).
dτ 2
In both cases, the WTD is obtained from the second
derivative of the ITP with respect to τ , W(τ ) = (cid:104)τ(cid:105) d2Π(τ )
,
where (cid:104)τ(cid:105) is the mean waiting time given by 1/(cid:104)τ(cid:105) =
dΠ
dτ (τ = 0). Eq.
(4) and (5) are evaluated numerically
for both many-body scattering states (2) and (3) with the
same method as Ref. [46, 48]. However, before discussing
our results it is useful to recall several established results
on WTD in quantum coherent conductors. In Ref. [39,46],
it was shown that for a single quantum channel with a volt-
age bias eV (spinless electrons), the scattering quantum
state is a train of non interacting fermions whose WTD is
approximately the Wigner Surmise
WW S(τ ) =
32
π2
τ 2
τ 3 exp
4
π
−
,
(6)
(cid:20)
(cid:17)2(cid:21)
(cid:16) τ
τ
with τ = h/eV is the average waiting time, which means
that due to Pauli's exclusion principle, electrons are sepa-
rated in time by τ on average. An important feature of this
WTD is the fact that it vanishes for τ (cid:28) τ which is the
hallmark of fermionic statistics. If now this stream of elec-
tron is partitioned by a scatterer with energy independent
transmission coefficient T , this WTD is continuously mod-
ified until it reaches an exponential form T exp(−T τ /τ )/τ
when T (cid:28) 1. This exponential shape is the signature of
uncorrelated events since detected electrons are well sep-
arated in time and therefore uncorrelated.
In this case,
the mean waiting time is (cid:104)τ(cid:105) = τ /T and therefore the
average current e/(cid:104)τ(cid:105) = e2
h V T in agreement with the so
called Landauer's formula [54]. Finally, when spin 1/2 are
considered there are two conducting channel at disposal
and the WTD no longer vanishes for small waiting times.
At perfect transmission, it is described by the generalized
Wigner-Dyson statistics [46].
WTD without spin filtering. -- We start with the
simplest situation where the single electron detector is spin
insensitive. In the absence of MBS, it was shown [48] that
the situation reduces to a stream of one dimensional free
electrons with two spin components.
Indeed, at perfect
Andreev reflection, all the incoming holes are converted
into electrons (Andreev mirror) with spin flip and energy
between µS and µS + eV . The WTD is therefore the one
of two perfect and independent quantum channels and is
described by the generalized Wigner-Dyson distribution
[46] depicted on Fig. 2a. The average waiting time is (cid:104)τ(cid:105) =
h/2eV or in other words the average current is 2e2
h V . On
the other hand, in the topological case, the SESAR effect
selects only one spin species reducing the possibilities to
a single perfect quantum channel (with spin orientation
+n). As a consequence, the WTD boils down to the so
called Wigner surmise [39] also depicted on Fig. 2a. The
average waiting time is h/eV and the average current e2
h V
therefore twice smaller than for the topological case. This
is in agreement with the common interpretation that a
Majorana behaves as "half an electron" [55].
(5)
We therefore conclude that not only the WTD repro-
p-3
D. Chevallier et al.
its WTD is therefore Wigner surmise (see Fig. 2b). This
WTD is characterized by a single peak centered around
τ = τ with broad fluctuations and exactly zero value at
zero which is the hallmark of Pauli exclusion principle as
already mentioned. When a MBS is present, the precise
shape of the WTD crucially depends on the detector spin
orientation. Although quite academical, we can start by
setting it to n. In that case, the detector collects every
electron coming from the interface and the WTD is also
the one of a single quantum channel. In this situation both
ABS and MBS yield the same spin resolved WTD. If we
choose now d = −n the detector collects nothing and if d
slightly deviates from −n only a few electrons are kept and
the WTD is expected to be exponential with rate eV
h P d
where P d is the overlap (cid:104)↑ d ↑n(cid:105)2.
For arbitrary d, the detector will partition the single
quantum channel according to spin. The situation is al-
most formally equivalent to the one of a spinless single
quantum channel flowing across a Quantum Point Con-
tact (QPC) with energy independent transmission proba-
bility [39]. Here this transmission probability will simply
be given by the overlap P d between ↑ d(cid:105) and ↑n(cid:105). In the
special case where d ⊥ n, the quantum state (3) is a bal-
anced mixture of ↑ d(cid:105) and ↓ d(cid:105) and then will be filtered
exactly like a single quantum channel across a QPC with
transmission probability 1/2. The situation can be imple-
mented experimentally either by tuning Vz just above ∆
and setting d = z or in the limit Vz (cid:29) ∆ where n = z
and filtering spin along x or y. This is shown on Fig. 2b
where we have evaluated Eq. 5 along z right above the
topological transition by brute force numerics (limited to
a quite small number of basis state (thirteen here) which
explains the small discrepancy) and compared it to the
expected result with very good agreement.
At this point, it is important to give some explanations
on the experimental feasibility. The substrate, namely
the heterojunction, has already been fabricated during the
quest for Majorana quasi-particle [21 -- 23] and consists of
a Rashba nanowire partially in contact with an s-wave
superconductor and in presence of a Zeeman field. The
crucial point is to detect reflected electrons one by one in
the normal part. Although still quite challenging, single
electron detection technology is progressing very fast and
might become a routine in the near future as reviewed in
[45, 49]. Otherwise, partial information on waiting times
can be extracted from the average current, shot noise or
second order coherence function obtained from Hong-Ou-
Mandel experiment [45, 56, 57].
Conclusion. -- We have studied the consequences of
the presence or not of a MBS at the interface between a
normal and a superconducting conductor on the electronic
WTD. When a single electron detector is placed far away
from the interface and detects electrons above the super-
conducting chemical potential µS without spin filtering
we observe a clear qualitative distinction between the
topological and non topological situations.
In addition,
Fig. 2: (color online) WTDs versus τ /τ of electrons flowing out
of the interface without spin filtering a) and with spin filtering
orthogonal to the majorana polarization b). The solid gray
line (resp.
red line) corresponds to an NS junction without
(resp. with a) MBS (see text) at perfect Andreev reflection.
The dashed black line represents the WTD of a single channel
normal conductor with transmission probability one (a)) and
one-half (b)) for comparison [39].
duces well known differences about the average current
but also exhibits a qualitative mismatch between the two
situations. With MBS, the WTD is exactly zero at τ = 0
because of Pauli's exclusion principle whereas it is not in
the ABS case since two channels are available [46]. How-
ever, this discrepancy must be visible in any statistical
measure of the electronic current like noise, third cumu-
lant and Full Counting Statistics (FCS) in the same way
that it is between one and two channel standard meso-
scopic conductors.
WTD with spin filtering. -- We now turn to a richer
situation where we assume the single electron detector to
be spin sensitive along a direction d and therefore collects
only electrons with spin projection ↑ d. The following dis-
cussion is basically equivalent to the interpretation of the
famous Stern and Gerlach experiment. The key point is
that quantum state (2) is spin isotropic whereas (3) is spin
polarized in the n direction. In particular, all possible ob-
servables are totally independent of the detector spin ori-
entation in the ABS case. This is in strong contrast with
the MBS where, for instance, filtering spin along ±n leads
obviously to orthogonal results. We illustrate this state-
ment on the WTD but it is very important to note that it
applies to any other observables such as the spin resolved
average current [35] or noise [4] and FCS in general.
For ABS, the single particle detector, whatever its spin
orientation d, filters one spin species, namely ↑ d. Since
they are equally populated and independent, the outgoing
state (2) reduces to a single perfect quantum channel and
p-4
0 0.5 1 1.5 0 1 2 3 4 0 0.5 1 0 1 2 3 4 τ/τW(τ)ABSMBSWignerABSQPCT=1/2MBSa)b)WithoutspinfilteringWithspinfilteringd⊥n Probing Majorana and Andreev Bound States with Waiting Times
Appendix B: Derivation of the Idle Time Prob-
ability. -- In this appendix we explain how to calculate
the idle time probability, following the notations of Ref.
[46]. It is important to note that the energy range of de-
tected particles is assumed to be small enough that the dis-
persion relation of electrons or holes is linear E = ¯hvF k.
In that case, charge measurements over a time window
∆t are equivalent to charge measurements over a space
window ∆x/vF thanks to Galilean invariance. The key
point to calculate Qσ,E is to specify the detection proce-
dure. This includes the possibility to only detect posi-
tive/negative energies, spin projection up/down with re-
spect to a given quantization axis. In an actual experi-
ment, the detection can be done by connecting the super-
conductor or the topological superconductor to two quan-
tum dots instead of a normal metal. By doing so one can
filter energy by applying an external gate on the two dots
or select the spin by using interacting quantum dots with
strong repulsion in order to get rid of the spin degeneracy
[61,62] . Analytically these properties can be implemented
easily in the definition of Q. This operator can be repre-
sented in the basis of the scattering states as
QE>µs =
∗
t(k)t
(cid:48)
)
(k
ei(k−k(cid:48))vF τ − 1
i(k − k(cid:48))
dk(cid:48)
2π
dk
2π
(8)
where the t(k) are the energy dependent transmission am-
plitudes of a scattering state and may be chosen in that
case as t(k) = 1 if E(k) > µs and t(k) = 0 if E(k) < µs.
In order to compute the ITP, the transport window has to
be discretized into N energy compartments of size eV /N
with corresponding momentum intervals of size κ = eV
N ¯hvF
with vF = ¯hkF
m is the Fermi velocity defined with m the
electron mass. Using this discretization leads to the fol-
lowing matrix elements for QE>µs in the large N limit
(cid:90)
(cid:104) (κn−κm)vF τ
(cid:105)
2
(κn − κm)
(9)
[Q]m,n =
κt∗
κmtκn
π
− i
2 κ(n−m)vF τ
e
sin
with m, n = 1, ...., N . From this definition of the ITP
and when the average is taken over a Slater determinant
of free fermions, the WTD can be cast as a determinant
of the form [41, 46]
Π(τ ) = det(1 − Qτ ),
(10)
which can be evaluated with a computer. Then,
it is
straigthforward to extend this detection procedure to a
spin selective one by setting spin dependent transmission
coefficients.
REFERENCES
[1] Fu L. and Kane C. L., Phys. Rev. Lett., 100 (2008)
096407.
Fig. 3: (color online) WTDs versus τ /τ of electrons flowing
out of the interface of a N/S (gray line) and a N/TS (red line).
The dashed and solid line correspond to two different width of
the states as mentioned in the legend.
we have shown that the non topological situation (ABS)
is immune to spin filtering in sharp contrast with the
topological one due to SESAR effect. This conclusion is
valid for the WTD which makes it a clear fingerprint of
MBS but is also true for other quantities like the average
current or higher moments of the FCS which can be
easier to measure in actual experiments. Extension of
this work could be the study of the influence of Coulomb
repulsion when the superconducting part is not grounded
but floating or the poisoning by another Majorana [58,59]
and temperature or disorder effects.
∗ ∗ ∗
We are grateful to G. Candela, G. Haack and J. Klino-
vaja for useful discussions and remarks. The research of
D. C. was supported by the Swiss NSF and NCCR QSIT.
Appendix A: Finite width of the outgoing states.
-- We study here the effect of a finite energy width of the
Majorana bound state and show that it does not qual-
itatively change the waiting time distribution. Due to
the finite hopping strength at the interface, the Majorana
bound state located at zero energy has a finite width Γ.
The main consequence of this is the energy dependence
of the Andreev reflection coefficient at the interface which
becomes [60]
RA(E) =
.
(7)
(cid:12)(cid:12)(cid:12)(cid:12)
(cid:12)(cid:12)(cid:12)(cid:12)2
Γ
E + iΓ
However, we can recover the same states (2) and (3) as in
the main text when taking the limit eV (cid:28) Γ. Using this
assumption, we can calculate the ITP and thus the WTD
when the states have a finite width (see Fig. 3) using the
energy dependent coefficients [46].
In fig. 3, we can see that the effect of the broadening of
the states has no dramatic effects on the WTD. For this
reason, we do not focus on this effect in the main text.
p-5
0 0.5 1 0 1 2 3 τ/τW(τ)MBSΓ≫eVMBSΓ=eVABSΓ≫eVABSΓ=eV D. Chevallier et al.
[2] Sato M. and Fujimoto S., Phys. Rev. B, 79 (2009)
094504.
[32] Fu L. and Kane C., Phys. Rev. B, 79 (2009) 161408(R).
[33] Rubbert S., Akhmerov A. R., Phys. Rev. B, 94 (2016)
[3] Lutchyn R.M., Sau J. D. and Das Sarma S., Phys. Rev.
115430.
Lett., 105 (2010) 077001.
[34] Beenakker C. W. J. and Kowenhoven L., Nat. Phys.,
[4] Oreg Y., Refael G. and v. Oppen F., Phys. Rev. Lett.,
12 (2016) 618.
105 (2010) 177002.
[5] Alicea J., Phys. Rev. B, 81 (2010) 125318.
[6] Potter A. C. and Lee P. A., Phys. Rev. B, 83 (2011)
094525.
[7] Klinovaja J., Gangadharaiah S. and Loss D., Phys.
Rev. Lett., 108 (2012) 196804.
[8] Chevallier D., Sticlet D., Simon P. and Bena C.,
Phys. Rev. B, 85 (2012) 235307.
[35] He J. J., Ng T. K., Lee P. A. and Law K. T., Phys.
Rev. Lett., 112 (2014) 037001.
[36] Haim A., Berg E., von Oppen F. and Oreg Y., Phys.
Rev. Lett., 114 (2015) 166406.
[37] Brandes T., Ann. Phys. (Berlin), 17 (2008) 477.
[38] Albert M., C. Flindt C. and M. Buttiker M., Phys.
Rev. Lett., 107 (2011) 086805.
[39] Albert M., Haack G., Flindt C. and Buttiker M.,
[9] Sticlet D., Bena C., and Simon P., Phys. Rev. Lett.,
Phys. Rev. Lett., 108 (2012) 186806.
108 (2012) 096802.
[10] Klinovaja J., Stano P. and Loss D., Phys. Rev. Lett,
109 (2012) 236801.
[40] Thomas K. H. and C. Flindt C., Phys. Rev. B, 87
(2013) 121405(R).
[41] Dasenbrook D., Flindt C., and M. Buttiker M.,
[11] Nadj-Perge S.,Drozdov I. K.,Bernevig B. A., and
Yazdani A., Phys. Rev. B, 88 (2013) 020407(R).
Phys. Rev. Lett., 112 (2014) 146801.
[42] Rajabi L., Poltl C. and Governale M., Phys. Rev.
[12] Klinovaja J., Stano P., Yazdani A., and Loss D.,
Lett., 111 (2013) 067002.
Phys. Rev. Lett., 111 (2013) 186805.
[43] Thomas K. H. and Flindt C., Phys. Rev. B, 89 (2014)
[13] Braunecker B. and Simon P., Phys. Rev. Lett., 111
245420.
(2013) 147202.
[14] Vazifeh M. M. and Franz M., Phys. Rev. Lett., 111
[44] Sothmann B., Phys. Rev. B, 90 (2014) 155315.
[45] Albert M. and Devillard P., Phys. Rev. B, 90 (2014)
(2013) 206802.
035431.
[15] Pientka F., Glazman L. I. and v. Oppen F., Phys.
[46] Haack G., Albert M. and C. Flindt C., Phys. Rev. B,
Rev. B, 88 (2013) 155420.
[16] Poyhonen K., Weststrom A., Rontynen J. and Oja-
nen T., Phys. Rev. B, 89 (2004) 115106.
90 (2014) 205429.
[47] Hofer P. P., Dasenbrook D. and C. Flindt C., Phys-
ica E (2015), doi: 10.1016/j.physe.2015.08.034, () .
[17] Maier F., Klinovaja J. and Loss D., Phys. Rev. B, 90
[48] Albert M., Chevallier D. and Devillard P., Physica
(2014) 195421.
E, 76 (2016) 209.
[18] Vernek E., Penteado P. H., Seridonio A. C. and
[49] Dasenbrook D. and C. Flindt C., Phys. Rev. B, 93
Egues J. C., Phys. Rev. B, 89 (2014) 165314.
[19] Alicea J., Rep. Prog. Phys., 75 (2012) 076501.
[20] Beenakker C. W. J., Annu. Rev. Con. Mat. Phys., 4
(2013) 113.
[21] Mourik V., Zuo K., Frolov S. M., Plissard S. R.,
Bakkers E. P. A. M. and Kouwenhoven L. P., Science,
336 (2012) 1003.
[22] Churchill H. O. H., Fatemi V., Grove-Rasmussen
K., Deng M. T., Caroff P., Xu H. Q. and Marcus C.
M., Phys. Rev. B, 87 (2013) 241401.
[23] Das A., Ronen Y., Most Y., Oreg Y., Heiblum M.
and Shtrikman H., Nat. Phys., 8 (2012) 887.
[24] Rokhinson L. P., Liu X. and Furdyna J. K. , Nat.
Phys., 8 (2012) 795.
[25] Lee E. J. H., Jiang X., Aguado R., Katsaros G.,
Lieber C. M. and De Franceschi S., Phys. Rev. Lett.,
109 (2012) 186802.
[26] Liu J., Potter A. C., Law K. T. and Lee P. A., Phys.
Rev. Lett., 109 (2012) 267002.
(2016) 245409.
[50] Brandes T. and Emary C., Phys. Rev. E, 93 (2016)
042103.
[51] Pikulin D. I. and Nazarov Y., JETP Lett., 94 (2012)
693697.
[52] Pikulin D. I. and Nazarov Y., Phys. Rev. B, 87 (2013)
235421.
[53] San Jose P., Cayao J., Prada E. and Aguado R., Sci.
Rep., 6 (2016) 21427.
[54] Blanter Ya. M. and Buttiker M., Phys. Rep., 336
(2000) 1.
[55] Kitaev A. Y., Phys. Usp., 44 (2001) 131.
[56] E. Bocquillon et al, Annalen der Physik, 526 (2014) 1.
[57] Haack G., Steffens A., J. Eisert J. and Hubener R.,
New J. Phys., 17 (2015) 113024.
[58] Beri B. and Cooper N. R., Phys. Rev. Lett., 109 (2012)
156803.
[59] Plugge S., Zazunov A., Erikson E., Tsvelik A. M.
and Egger R., Phys. Rev. B, 93 (2016) 104524.
[27] Bagrets D. and Altland A., Phys. Rev. Lett., 109
[60] Ioselevich. P, and Feigel'man M. V., New. J. Phys.,
(2012) 227005.
[28] Pientka F., Kells G., Romito A., Brouwer P. W.
and von Oppen F., Phys. Rev. Lett., 109 (2012) 227006.
[29] Pikulin D. I., Dahlhaus J. P., Wimmer M., Schome-
rus H. and Beenakker C. W. J., New. J. Phys., 14
(2012) 125011.
[30] Klinovaja J. and Loss D., Phys. Rev. B, 86 (2012)
085408.
[31] Prada E., San-Jose P. and Aguado R., Phys. Rev. B,
86 (2012) 180503(R).
15 (2013) 055011.
[61] Chevallier. D, Rech J., Jonckheere T. and Martin
T., Phys. Rev. B, 83 (2011) 125421.
[62] Recher. P, Sukhorukov E. V. and Loss D., Phys. Rev.
B, 63 (2001) 165314.
p-6
|
1911.12016 | 1 | 1911 | 2019-11-27T08:35:13 | Quantum dot exciton dephasing by Coulomb interaction. A fermionic analogue of the independent boson model | [
"cond-mat.mes-hall"
] | The time evolution of a quantum dot exciton in Coulomb interaction with wetting layer carriers is treated using an approach similar to the independent boson model. The role of the polaronic unitary transform is played by the scattering matrix, for which a diagrammatic, linked cluster expansion is available. Similarities and differences to the independent boson model are discussed. A numerical example is presented. | cond-mat.mes-hall | cond-mat | a
Quantum dot exciton dephasing by Coulomb interaction. A fermionic analogue of the
independent boson model
1 National Institute of Materials Physics, Atomistilor 405A, Magurele 077125, Romania and
I.V. Dinu1,2, M. T¸ olea1, and P. Gartner2
2 Centre International de Formation et de Recherche Avanc´ees en
Physique - NIMP, Atomistilor 407, Magurele 077125, Romania
(Dated: November 28, 2019)
The time evolution of a quantum dot exciton in Coulomb interaction with wetting layer carriers is
treated using an approach similar to the independent boson model. The role of the polaronic unitary
transform is played by the scattering matrix, for which a diagrammatic, linked cluster expansion is
available. Similarities and differences to the independent boson model are discussed. A numerical
example is presented.
PACS numbers:
I.
INTRODUCTION
Quantum dots (QD) in semiconductor heterostruc-
tures are sometimes regarded as artificial atoms, but one
aspect in which they differ from real atoms is that they
live in an invasive environment. QD carriers interact with
both acoustic and optical phonons, and sometimes with
free carriers in the wetting layer (WL) or in the bulk.
Such interactions play an important role in the QD opti-
cal properties, and especially in the dissipative behavior,
like carrier population redistribution and polarization de-
phasing.
In this respect, the role of the phonons enjoyed a much
larger attention in the literature, one reason being the
availability of the independent boson model (IBM)1 -- 3,
which is both simple and in certain circumstances exact.
The popularity of the method cannot be overestimated,
it being used in various contexts like the theory of exci-
ton dephasing and absorption4 -- 6, phonon-assisted exci-
ton recombination7, phonon-mediated off-resonant light-
matter coupling in QD lasers8,9, generation of entan-
gled phonon states10 or phonon-assisted adsorption in
graphene11, to cite only a few.
The IBM relies on the carrier-phonon interaction be-
ing diagonal in the carrier states. If not, or if additional
interactions are present, the method ceases to be exact,
but it is still helpful as a way to handle a part of the
interaction, responsible for the polaron formation. This
diagonality implies that the bosons see an occupation
number, either zero or one, according to whether the QD
excitation is present or not. The difference between the
two cases amounts, in a linear coupling, to a displace-
ment of the phonon oscillation centers, without changing
their frequency.
In other words one has just a change
of basis, performed by a unitary operator, the polaronic
transform. The diagonality requirement means that the
method is particularly suited for calculating pure dephas-
ing, i.e. polarization decay without population changes,
and absorption spectra4,12, where it produces exact ana-
lytic results.
In view of this wide range of applications it is legiti-
mate to ask whether such a unitary transform does not
exist for the interaction with the free carriers too. We
show that the answer is positive, if we frame the prob-
lem as above, i.e.
if the interaction is diagonal in the
QD states. We illustrate the situation in the case of
a two-level system where the electron-hole vacuum acts
as the ground state and an exciton pair as the excited
state. The charge distribution of the latter acts as a
scattering center for the carriers in the continuum.
It
is known13,14 that the free and the scattered continua
are unitary equivalent, with the transform provided by
the scattering matrix. In many ways this approach re-
sembles the IBM, and can be regarded as its fermionic
analogue. Many similarities between the two can be seen,
but we also point out the differences. Most importantly,
the method is not exact any more, but it lends itself to
a diagrammatic expansion.
In a previous paper15 this approach has been already
used in the context of a nonresonant Jaynes-Cummings
(JC) model. The cavity feeding was assisted by the
fermionic bath of WL carriers, which compensated the
energy mismatch. The situation there is more compli-
cated due to the QD states getting mixed by the JC in-
teraction with the photonic degrees of freedom.
In the present paper, we address a simpler, more
clearcut situation, involving only the exciton-continuum
interaction. We illustrate the method by calculating the
polarization decay and absorption line shape, as func-
tions of bath temperature and carrier concentration. We
also discuss in more detail the similarities and differences
with respect to the IBM.
II. THE MODEL
The system under consideration consists of a QD ex-
citon interacting with a fermionic thermal bath, repre-
sented by the WL carriers. The latter are taken inter-
actionless and in thermal equilibrium. The Hamiltonian
describing the problem is ( = 1)
with S generated by the scattering potential W
2
H = εX X †X + (1 − X †X) h0 + X †X hX ,
h0 = Xλ=e,hXk
hX = h0 + W .
kλ†
ελ
kλk ,
(1)
Here X †, X are the excitonic creation and annihilation
operators. Specifically, considering in the QD one s-state
in each band, with operators e†, e and h†, h for elec-
trons and holes respectively, we have X = he. Limit-
ing the QD configurations to the neutral ones, one has
X †X = e†e = h†h. The exciton energy is εX . The WL
Hamiltonian is given by h0, with the subscripted λ sym-
bol meaning either e or h WL-continuum operators, and
the momentum index k including tacitly the spin. In the
presence of the exciton the WL Hamiltonian hX gets ad-
ditionally a term W , describing the interaction with the
QD carriers.
This is expressed in terms of the matrix elements
V λλ′
ij,kl =Xq
Vq hϕλ
i eiqr ϕλ
l ihϕλ′
j e−iqr ϕλ′
k i
(2)
of the Coulomb potential Vq, between one-particle states,
with λ, λ′ = e, h. Only two of these indices are needed
since band index conservation is, as usual, assumed.
The WL-QD interaction has the form
X †X W =
Xk,k′
Xk,k′
e†
kek′(cid:2)V ee
khk′(cid:2)V hh
h†
sk,k′se†e − V he
sk,k′sh†h − V ee
sk,k′sh†h − V eh
sk,k′se†e − V hh
sk,sk′e†e(cid:3) +
sk,sk′ h†h(cid:3) .
(3)
It shows that the WL carriers are scattered by an external
field produced by the exciton, having the form
W = Xλ=e,hXk,k′
W λ
k,k′λ†
kλk′ .
(4)
In each W λ
k,k′ the first two terms describe direct, elec-
trostatic interaction between WL-carriers with the QD
electron and hole respectively. The difference between
repulsion and attraction is nonzero due to the different
charge densities of these two. The exciton is globally
neutral, but local charges are usually present and gen-
erate scattering. The strength of the scattering depends
on the degree of charge compensation within the exci-
ton. The third term is the exchange contribution, and it
is not expected to be large, since around q = 0 the ma-
trix elements in Eq.(2) become overlap integrals between
orthogonal states.
The idea of the present method relies on the unitary
equivalence between the WL Hamiltonians h0 and hX
provided by the scattering matrix S(0,−∞) (see e.g.
13,14). One has
S(−∞, 0) hX S(0,−∞) = h0 ,
(5)
S(t1, t2) = S †(t2, t1)
= T exp(cid:20)−iZ t1
t2
W (t) dt(cid:21) ,
(6)
t1 > t2 .
T is the time ordering operator and the interaction rep-
resentation of the perturbation W (t) with respect to h0
is used.
For the full WL-QD Hamiltonian we formally eliminate
the interaction part using the unitary transform
U = 1 − X †X + X †X S(0,−∞) ,
(7)
which switches on the action of the S-matrix only when
the exciton is present. It follows that
U †(cid:2)(1 − X †X) h0 + X †X hX(cid:3) U =
(1 − X †X) h0+X †X S(−∞, 0) hX S(0,−∞) = h0 .
The excitonic operators are changed, according to eX =
U † X U = X S(0,−∞) = S(0,−∞) X and similarly
eX † = X †S(−∞, 0), but X †X remains invariant. There-
fore in the transformed problem
(8)
(9)
eH = U † H U = εX X † X + h0 ,
the QD and the WL become uncoupled. This follows
faithfully the effect produced by the polaronic transform
in the bosonic bath case, as described by the IBM.
Assuming an instantaneous excitation at t = 0, the
linear optical polarization of the QD is expressed in terms
of the exciton retarded Green's function
P(t) = −i θ(t)hX(t)X †i = −i θ(t)Tr{ρ X(t)X †} . (10)
In the unitary transformed picture
P(t) = −i θ(t)Tr{eρ eX(t)eX †} ,
the problem is interaction-free, and QD and WL opera-
tors evolve independently. Therefore
(11)
eX(t) = e−iεX tXeih0tS(0,−∞)e−ih0t
= e−iεX tXS(t,−∞) ,
(12)
and as a consequence
P(t) = −i θ(t)e−iεX t hXX †ihS(t, 0)i .
(13)
Essentially, besides a trivial exciton energy oscillation,
the problem boils down to evaluating the thermal bath
average of the scattering matrix S(t, 0) for positive times.
This is again formally similar to the IBM case, but dif-
fering in the details, as will be discussed below. In the
present case one makes use of the linked cluster (cumu-
lant) expansion for hS(t, 0)i1,16, in which a lot of resum-
mation has been performed. As a consequence hS(t, 0)i is
expressed as an exponential, exp[Φ(t)], where Φ(t) is the
(a)
(b)
k
t
1
W
λ
kk
L
1
W
λ
kk '
k
k '
1/2
k '
W
λ
k ' k
W
λ
kk '
t
3
W
λ
k ' ' k
t
1
t
2
k
k
L
2
W
λ
k ' k ' '
1/3
k ' '
t
2
k '
t
1
W
λ
kk '
L
3
3
Initially it decays quadratically with time, as obvious
from the double integral from 0 to t in Eq.(14), and also
reflected in Eq.(16) by the subtraction of the first two
terms in the expansion of the exponential.
More relevant is the long-time behavior of the real part
k,k′(cid:12)(cid:12)(cid:12)
ReL2(t) = − Xλ,k,k′(cid:12)(cid:12)(cid:12)W λ
2
(1 − f λ
k )f λ
k′
kk′ t)
1 − cos(ελ
kk′)2
(ελ
,
(17)
which controls the polarization decay. Indeed, using the
large t asymptotics of (1 − cos ωt)/ω2 ∼ π δ(ω) t, one
finds an exponential attenuation P(t) ∼ exp(−Γt) with
the decay rate given by
Figure 1: (a) Elementary interaction vertex. (b) First three
connected diagrams L1, L2 and L3 of the linked cluster expan-
sion in the evaluation of the thermal average of the S-matrix
hS(t, 0)i.
Γ = π Xλ,k,k′(cid:12)(cid:12)(cid:12)W λ
k,k′(cid:12)(cid:12)(cid:12)
2
(1 − f λ
k )f λ
k′ δ(ελ
kk′ ) .
(18)
sum of all connected diagrams with no external points
Φ(t) = Pn Ln(t), where the diagram Ln , n = 1, 2, 3 . . .
of order n comes with a factor 1/n. Its internal points
are time-integrated from 0 to t. In our case the interac-
tion is an external potential, not a many-body one and
the elementary interaction vertex in the diagrams is as
in Fig. 1(a). The first diagrams of the expansion are
represented in Fig. 1(b). One has
0
dt1W λ
Z t
L1(t) = −Xλ,k
k,k′(cid:12)(cid:12)(cid:12)
2 Xλ,k,k′(cid:12)(cid:12)(cid:12)W λ
L2(t) = −
×Z t
dt1Z t
1
0
0
k,k G0
λk(t1, t+
1 )
2
(14)
dt2 G0
λk(t1, t2) G0
λk′ (t2, t1) ,
where G0
λk.
λk is the free Green's function for the WL state
For the first-order contribution one obtains an imagi-
nary, linear time dependence, which amount to a correc-
tion to the exciton energy.
L1(t) = −iXλ,k
W λ
k,k f λ
k t
(15)
with f λ
same indices.
k the Fermi function for the WL level carrying the
More important is the second order diagram (ελ
kk′ de-
notes the difference ελ
k − ελ
k′ )
2
(1 − f λ
k )f λ
k′
k,k′(cid:12)(cid:12)(cid:12)
L2(t) = Xλ,k,k′(cid:12)(cid:12)(cid:12)W λ
×(cid:16)e−i ελ
kk′ t − 1 + i ελ
kk′ t(cid:17)(cid:16)ελ
kk′(cid:17)−2
(16)
.
A comparative discussion with the IBM is in order.
The dephasing process does not imply a change of pop-
ulation (pure dephasing) and therefore the decay rate Γ
does not involve energy transfer, as seen by the presence
of the δ-function. In the case of IBM that means only
zero-energy phonons are involved. Then all the discus-
sion takes place around the spectral edge, and depends on
the density of states and coupling constants there. Usu-
ally they vanish as a higher power of energy and overcome
the singularity of the Bose-Einstein distribution, with the
result that Γ = 0. This leads to the problem of the zero-
phonon line (ZPL) appearing as an artificial pure δ-peak
in the spectrum. This is a weak point and several ways
out have been devised, like including a phenomenological
line broadening4, a phonon-phonon interaction17, or con-
sidering a lower dimensionality5 to enhance the density
of states. The fermionic case is free from this problem,
since Γ relies on quantities around the chemical potential.
Also, it is worth noting that limiting the expansion to
L2 gives the exact result in the IBM, while here it is only
an approximation. One may plead in favor of neglecting
higher diagrams by arguing that a lot of compensation
takes place between the direct terms in Eq.(3) and the
exchange terms are small, in other words the QD-WL
coupling is weak. Nevertheless, this is not sufficient, since
it might turn out that higher order diagrams behave as
higher powers in time, and thus asymptotically overtake
the second order one. We argue below that this is not
the case.
Indeed, the structure of the diagrams is such that the
θ-functions contained in the Green's functions splits the
expression into integrals of the form
In(t) =Z t
0
dt1eiω1t1Z t1
0
dt2eiω2t2 . . .Z tn−1
0
dtneiωntn .
(19)
The frequency appearing in each time integration is the
difference of the energies of the Green's functions meet-
ing at the corresponding internal points. Summing these
pairwise differences around the diagram entails the rela-
tion ω1 + ω2 + . . . + ωn = 0.
On the other hand, the Laplace transform of In(t) can
be easily calculated and gives
Jn(s) =
1
s
1
s + iω1
1
s + i(ω1 + ω2) ···
1
s + i(ω1 + ω2 + . . . + ωn)
···
(20)
The last factor is actually 1/s,
like the first, so that
Jn(s) ∼ 1/s2 around s = 0. This corresponds to a
behavior In(t) ∼ t as t → ∞ for all n. For instance,
the n = 2 case, discussed above, can be recovered from
J2(s) = 1/s2 · 1/(s + iω1). The low-s asymptotics of its
real part generates the linear large time behavior times
the πδ(ω1) factor, with ω1 = ελ
k,k′.
Using g as a generic notation for the coupling strength,
we conclude that the contribution of the diagram of order
n at large times is ∼ gn t. This is in agreement with
the so-called weak interaction limit18, stating that when
g → 0 and simultaneously t → ∞ so that g2 t remains
constant, the Born-Markov dissipative evolution becomes
exact. Indeed, here all n > 2 contributions vanish in this
scaling limit.
III. NUMERICAL EXAMPLE
As an illustration we consider an InAs/GaAs het-
erostructure, with a self-assembled QD on a WL of
L = 2.2 nm width. The relevant material parame-
ters are those of Vurgaftman et al.19. We assume the
wavefunctions to be factorized into the square-well solu-
tion χλ(z) along the growth direction and the in-plane
function. The latter are taken as oscillator ground-
state gaussians for the QD s-states for electrons and
holes, and as plane waves, orthogonalized on the for-
mer, for the WL extended states. The gaussians are
defined by their width αλ in the reciprocal space, i.e.
ϕλ
λr2/2) with r here the in-plane
position. These parameters depend on many geometric
and composition features of the QD, so that they can
reach a broad set of values. For the sake of our example
we take αe = 0.2/nm and αh = 0.1/nm.
s (r) = αλ/√π exp(−α2
The phonon-induced dephasing is expected to be less
important at low temperatures. The Coulomb-assisted
dephasing depends on both temperature and WL-carrier
concentration, therefore lowering the temperature and in-
creasing the concentration it has a chance to compete
with the phononic processes. We consider only the neu-
tral charging, with electrons and holes in the WL at the
same concentration n.
In Fig. 2 the time evolution of the real part of Φ(t)
is plotted for two different temperatures. The inital
quadratic behavior is followed by a linear decrease, whose
slope Γ is the dephasing rate predicted by Eq.(18). It in-
creases with temperature, as confirmed by Fig. 3, which
shows the values of Γ at various temperatures and carrier
concentrations.
4
(b)
0.000
-0.002
]
)
t
(
[
e
R
-0.004
0.000
(a)
-0.002
-0.004
-0.006
T = 5 K
-0.006
T = 10 K
-0.008
0.0
1.0
0.5
Time (ps)
-0.008
0.0
1.5
1.0
0.5
Time (ps)
1.5
Figure 2: (color online) Time evolution of the real part of Φ
for two temperatures, 5K (a) and 10K (b) at the same carrier
concentration n = 1012/cm2. The dephasing reaches a linear
decay whose rate increases with temperature.
)
s
p
/
1
(
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
n = 1012 / cm2
n = 5 1011 / cm2
n = 1011 / cm2
0
20
40
60
80
Temperature (K)
100
120
Figure 3: (color online) Dephasing rates Γ as functions of
temperature for different carrier concentrations.
The range of those values is such that Γ is of the or-
der of a few µeV. This is comparable with results for
dephasing by phonons at low temperatures both in theo-
retical simulations4,20 and in experimental data21,22. Ex-
perimental data obtained by four-wave mixing22 do not
separate phonon and injected carrier contributions to de-
phasing, but their total effect is still in the µeV range.
For an increase of temperatures from 5K to 120K the
dephasing grows by roughly one order of magnitude. In
the same conditions the rate of dephasing by phonons
gains two orders of magnitude4,21, showing a higher sen-
sitivity to temperature. Yet in the case of the fermionic
bath the decay is enhanced also by increasing a second
)
s
t
i
n
u
.
b
r
a
(
m
u
r
t
c
e
p
S
1.0
0.8
0.6
0.4
0.2
0.0
T = 10 K
T = 30 K
T = 50 K
T = 100 K
-0.0375
-0.0300
-0.0225
-0.0075
0.0000
0.0075
-0.0150
( ps)
5
physical pure δ-spike in the frequency domain.
This is not the case with the fermionic bath, as also
seen in Fig. 4. The main feature of the spectra is their
Lorentzian shape, as a consequence of the exponential
decay in the time domain. Still, the quadratic initial
behavior replaces the cusp at t = 0 of a pure exponential
by a smooth matching.
In the frequency domain this
leads to a departure from the Lorentzian, in the sense of
a faster decay at large frequencies.
In Fig. 5 we also consider the dependence of dephasing
on other, more geometric parameters. It is seen that Γ
is not very sensitive to the WL width L, but it is sig-
nificantly influenced by the spatial extension of the QD
s-states. The broader the states, the stronger the de-
phasing, due to a more efficient scattering.
Figure 4: (color online) Absorption spectra for n = 1012/cm2
at T=10, 30, 50, 100K
IV. CONCLUSIONS
0.030
0.025
0.020
)
s
p
/
1
(
0.015
0.010
0.005
L = 4.0 nm
L = 2.2 nm
e = 0.15 / nm, h = 0.075 / nm
e = 0.20 / nm, h = 0.100 / nm
e = 0.30 / nm, h = 0.150 / nm
0.000
0
20
40
60
80
Temperature (K)
100
120
Figure 5: (color online) Temperature dependence of the de-
phasing rate for different WL width L and space extension
parameters α. All curves for n = 1012/cm2
controllable parameter, the carrier concentration.
As mentioned above, the description of the phonon de-
phasing by the IBM runs into the ZPL problem. As seen
in Refs.6,17 the slope of the long-time linear asymptotics
is zero, for reasons discussed Sec.II. This leads to an un-
1 G. D. Mahan, Many Particle Physics (Springer, 2000), 3rd
ed., ISBN 0306463385.
2 K. Huang and A. Rhys, Proc. R. Soc. Ser. A 204, 406
(1950).
3 C.
B.
Duke
and
G.
D.
Phys.
Rev.
139,
A1965
(1965),
Mahan,
URL
In conclusion, we have shown that a fermionic counter-
part of the popular IBM is possible. It describes the QD
exciton interaction with the fermionic bath consisting of
injected carriers in the bulk or WL. Similarities and dif-
ferences to the IBM are pointed out. For instance, the
present solution takes the form of a diagrammatic series
expansion, while the IBM is exact, but this advantage
is lost as soon as other interactions are present. Also,
our case is free from the ZPL problem inherent to the
bosonic case. The dephasing process is controlled not
only by temperature but also by the chemical potential
of the bath. The numerical illustration shows that at
low temperatures and higher carrier concentrations the
dephasing times are comparable with those produced by
the phonon interaction. But, of course, this is also depen-
dent on the parameters of the particular case considered.
The dephasing gets stronger at higher temperature and
concentration, as well as with broader charge distribution
of QD states.
Acknowledgments
The authors acknowledge financial
from
CNCS-UEFISCDI Grant No. PN-III-P4-ID-PCE-2016-
0221 (I.V.D. and P.G.) and from the Romanian Core Pro-
gram PN19-03, Contract No. 21 N/08.02.2019, (I.V.D.
and M. T¸ .).
support
https://link.aps.org/doi/10.1103/PhysRev.139.A1965.
4 R. Zimmermann and E. Runge, in Proceedings of the 26th
ICPS, Edinburgh, UK, edited by A. Long and J. Davies
(IOP Publishing, Bristol, 2002), p. M 3.1.
5 G. Lindwall, A. Wacker, C. Weber, and A. Knorr,
URL
Phys. Rev.
(2007),
087401
Lett.
99,
https://link.aps.org/doi/10.1103/PhysRevLett.99.087401.
6 X. Li, T. Wang, and C. Dong, IEEE J. Quantum Electron.
F. Jahnke, Phys. Rev. B 89, 161302 (2014), URL
https://link.aps.org/doi/10.1103/PhysRevB.89.161302.
6
50, 548 (2014).
7 L. Dusanowski, A. Musia l, A. Mary´nski, P. Mrowi´nski,
J. Misiewicz,
Reithmaier,
(2014), URL
J. Andrzejewski, P. Machnikowski,
A.
et
https://link.aps.org/doi/10.1103/PhysRevB.90.125424.
Hofling,
al., Phys. Rev. B 90,
J.
125424
Somers,
P.
S.
8 M. Florian, P. Gartner, C. Gies, and F. Jahnke, New J.
Phys. 15, 035019 (2013).
9 U. Hohenester, Phys. Rev. B 81, 155303 (2010), URL
https://link.aps.org/doi/10.1103/PhysRevB.81.155303.
and D. Wig-
(2019), URL
10 T. Hahn, D. Groll, T. Kuhn,
ger, Phys. Rev. B 100,
https://link.aps.org/doi/10.1103/PhysRevB.100.024306.
024306
11 S. Sengupta, Phys. Rev. B 100, 075429 (2019), URL
https://link.aps.org/doi/10.1103/PhysRevB.100.075429.
12 L. Besombes, K. Kheng, L. Marsal,
155307
riette, Phys. Rev. B 63,
https://link.aps.org/doi/10.1103/PhysRevB.63.155307.
and H. Ma-
(2001), URL
13 J. R. Taylor, Scattering Theory (Dover Publications, N.Y.,
2006).
14 A. G. Sitenko, Scattering Theory (Springer, 1991), ISBN
3642840361.
15 M. Florian, P. Gartner, A. Steinhoff, C. Gies, and
16 A. A. Abrikosov, Methods of Quantum Field Theory in Sta-
tistical Physics (Dover Publications, N.Y., 1975), revised
ed., ISBN 0486632288.
Muljarov
17 E.
and
A.
R.
237401
Zimmermann,
URL
Phys. Rev.
https://link.aps.org/doi/10.1103/PhysRevLett.93.237401.
(2004),
Lett.
93,
18 H. Spohn, Rev. Mod. Phys. 52, 569 (1980), URL
https://link.aps.org/doi/10.1103/RevModPhys.52.569.
19 I. Vurgaftman,
J. R. Meyer,
Mohan, Appl. Phys. Rev. 89,
https://doi.org/10.1063/1.1368156.
and L. R. Ram-
5815 (2001), URL
21 P. Borri, W. Langbein,
20 T. Takagahara, Phys. Rev. B 60, 2638 (1999), URL
https://link.aps.org/doi/10.1103/PhysRevB.60.2638.
S. Schneider, U. Wog-
and D. Bim-
157401 (2001), URL
gon, R. L. Sellin, D. Ouyang,
berg, Phys. Rev. Lett. 87,
https://link.aps.org/doi/10.1103/PhysRevLett.87.157401.
22 P. Borri, W. Langbein,
gon, R. L. Sellin, D. Ouyang,
berg, Phys. Rev. Lett. 89,
https://link.aps.org/doi/10.1103/PhysRevLett.89.187401.
S. Schneider, U. Wog-
and D. Bim-
187401 (2002), URL
|
1811.04390 | 2 | 1811 | 2019-07-29T20:39:38 | Unconventional quantum optics in topological waveguide QED | [
"cond-mat.mes-hall",
"quant-ph"
] | The discovery of topological materials has challenged our understanding of condensed matter physics and led to novel and unusual phenomena. This has motivated recent developments to export topological concepts into photonics to make light behave in exotic ways. Here, we predict several unconventional quantum optical phenomena that occur when quantum emitters interact with a topological waveguide QED bath, namely, the photonic analogue of the Su-Schrieffer-Hegger model. When the emitters frequency lies within the topological band-gap, a chiral bound state emerges, which is located at just one side (right or left) of the emitter. In the presence of several emitters, it mediates topological, long-range tunable interactions between them, that can give rise to exotic phases such as double N\'eel ordered states. On the contrary, when the emitters' optical transition is resonant with the bands, we find unconventional scattering properties and different super/subradiant states depending on the band topology. We also investigate the case of a bath with open boundary conditions to understand the role of topological edge states. Finally, we propose several implementations where these phenomena can be observed with state-of-the-art technology. | cond-mat.mes-hall | cond-mat | Unconventional quantum optics in topological waveguide QED
M. Bello,1 G. Platero,1 J. I. Cirac,2 and A. Gonz´alez-Tudela2, 3
1Instituto de Ciencia de Materiales de Madrid, CSIC, 28049, Spain
2Max-Planck-Institut fur Quantenoptik, Hans-Kopfermann-Strasse 1, 85748 Garching, Germany
3Instituto de F´ısica Fundamental IFF-CSIC, Calle Serrano 113b, Madrid 28006, Spain.∗
(Dated: July 31, 2019)
The discovery of topological materials has challenged our understanding of condensed matter
physics and led to novel phenomena. This has motivated recent developments to export topological
concepts into photonics to make light behave in exotic ways. Here, we predict several unconven-
tional quantum optical phenomena that occur when quantum emitters interact with a topological
waveguide QED bath, namely, the photonic analogue of the Su-Schrieffer-Heeger model. When
the emitters' frequency lies within the topological band-gap, a chiral bound state emerges, which
is located at just one side (right or left) of the emitter. In the presence of several emitters, this
bound state mediates topological, tunable interactions between them, that can give rise to exotic
many-body phases such as double N´eel ordered states. Furthermore, when the emitters' optical
transition is resonant with the bands, we find unconventional scattering properties and different su-
per/subradiant states depending on the band topology. Finally, we propose several implementations
where these phenomena can be observed with state-of-the-art technology.
I.
INTRODUCTION
Even though the introduction of topology in condensed
matter was originally motivated to explain the integer
Quantum Hall effect [1], its implications were more far-
reaching than expected. On a fundamental level, topo-
logical order resulted in a large variety of new phenom-
ena, as well as new paradigms for classifying matter
phases [2]. On practical terms, topological states can
be harnessed to achieve more robust electronic devices
or fault-tolerant quantum computation [3]. This spec-
tacular progress motivated the application of topological
ideas to photonics, for example, to engineer unconven-
tional light behaviors. The starting point of the field
was the observation that topological bands also appear
with electromagnetic waves [4]. Soon after that, many
experimental realizations followed using microwave pho-
tons [5], photonic crystals [6, 7], coupled waveguides [8] or
resonators [9 -- 11], exciton-polaritons [12] or metamateri-
als [13], to name a few (see [14] and references therein for
an authoritative review). Nowadays, topological photon-
ics is a burgeoning field with many experimental and the-
oretical developments. Among them, one of the current
frontiers of the field is the exploration of the interplay
between topological photons and quantum emitters [15 --
17].
In this manuscript, we show that topological pho-
tonic systems cause a number of unprecedented phe-
nomena in the field of quantum optics, namely, when
they are coupled to quantum emitters. We analyze the
simplest model consisting of two-level quantum emit-
ters (QEs) interacting with a one-dimensional topolog-
ical photonic bath described by the Su-Schrieffer-Heeger
(SSH) model [18] (see Fig. 1). When the QE frequency
∗ a.gonzalez.tudela@csic.es
FIG. 1. System schematic. (A) Schematic picture of the
present setup: Ne two-level quantum emitters interact with
the photonic analogue of the SSH model. This model is char-
acterized by having alternating hopping amplitudes J(1 ± δ),
where J defines their strength, while δ, the so-called dimeriza-
tion parameter, controls the asymmetry between them. The
interaction with photons (in transparent red) induces non-
(B) Bath's energy
trivial dynamics between the emitters.
bands for a system with a dimerization parameter δ = 0.2.
The main spectral regions of interest for this manuscript are
the middle band-gap (green) and the two bands (blue).
9
1
0
2
l
u
J
9
2
]
l
l
a
h
-
s
e
m
.
t
a
m
-
d
n
o
c
[
2
v
0
9
3
4
0
.
1
1
8
1
:
v
i
X
r
a
BA lies between the two bands (green region in Fig. 1B)
we predict the emergence of chiral photon bound states
(BS), that is, BSs which localize to the left/right side of
the QEs depending on the topology of the bath. In the
many-body regime (i.e., with many emitters) those BSs
mediate tunable, chiral, long-range interactions, leading
to a rich phase diagram at zero temperature, e.g., with
double N´eel-ordered phases. Furthermore, when the QEs
are resonant with the bands (blue regions in Fig. 1B), we
also find unusual dissipative dynamics. For example, for
two equal QEs separated a given distance, we show that
both the super/subradiance conditions [19] and the scat-
tering properties depend on the parameter that governs
the bath topology even though the energy dispersion ω(k)
is insensitive to it. This might open avenues to probe the
topology of these systems in unconventional ways, e.g.,
through reflection/transmission experiments.
II. LIGHT-MATTER INTERACTIONS WITH
ONE-DIMENSIONAL TOPOLOGICAL BATHS
The system that we study along this manuscript is
sketched in Fig. 1A: one or many QEs interact through a
common bath which behaves as the photonic analogue of
the SSH model [18]. This bath model is described by two
interspersed photonic lattices A/B of size N with alter-
nating nearest neighbour hoppings J(1±δ) between their
photonic modes. Assuming periodic boundary conditions
and defining V † = (a†k, b†k), the bath Hamiltonian can be
k V † HB(k)V ,
with (setting = 1):
written in momentum space as HB = (cid:80)
(cid:19)
where f (k) = −J(cid:2)(1 + δ) + (1 − δ)e−ik(cid:3) = ω(k)eiφ(k)
tween the A (B) modes, ak = (cid:80)
(cid:80)
j aje−ikj/√N (bk =
j bje−ikj/√N ). Here a†j/b†j (aj/bj) are the creation
(with ω(k) > 0) is the coupling in momentum space be-
(cid:18) ωa
f (k)
f∗(k) ωa
HB(k) =
(1)
,
(annihilation) operators of the A/B photonic mode at
the j'th unit cell. We assume that the A/B modes
have the same energy, ωa, that from now on will be
the reference energy of the problem, i.e., ωa ≡ 0. This
Hamiltonian can be easily diagonalized introducing the
eigenoperators, uk/lk =(cid:2)
(cid:80)
(cid:112)
k ωk(u†kuk − l†klk), leading to two bands with energy:
(2)
(cid:3) /√2, as HB =
2(1 + δ2) + 2(1 − δ2) cos(k) .
Let us now summarize the main bath properties:
±ak + eiφ(k)bk
± ω(k) = ±J
• The bath possesses sublattice (chiral) symme-
try [18], such that all eigenmodes can be grouped
in chiral-symmetric pairs with opposite energies.
Thus, the two bands are symmetric with respect
to ωa, spanning from [−2J,−2δJ] (lower band)
and [2δJ, 2J] (upper band). The middle gap is
2
4δJ, such that it closes when δ = 0, recovering
the normal 1D tight-binding model.
• This bath supports topologically non-trivial phases,
belonging to the BDI class in the topological classi-
fication of phases [20]. More concretely, both bands
can be characterized by a topological invariant, the
Zak phase [18] Z, such that Z = 0 corresponds to a
trivial insulator, while Z = π implies a non-trivial
insulator. For the parametrization we have chosen
this occurs for δ > 0 and δ < 0, respectively. Notice
that for an infinite system (i.e., in the bulk), this
definition depends on the choice of the unit cell and
the role of δ can be reversed by shifting the unit cell
by one site. In the bulk the band topology man-
ifests in the fact that one can not transform from
one phase to the other without closing the gap (as
long as the symmetry is preserved).
• With finite systems, however, the sign of δ deter-
mines whether the chain ends with weak/strong
hoppings, which leads to the appearance (or not)
of topologically robust edge states [21].
Now, let us finally describe the rest of the elements of
our setup. For the Ne QEs, we consider they all have a
single optical transition g-e, with a detuning ∆ respect
to ωa, and they couple to the bath locally. Thus, their
free and interaction Hamiltonian read:
Ne(cid:88)
(cid:88)
(cid:0)σm
egcxm + H.c.(cid:1) ,
σm
ee ,
m=1
HS = ∆
HI = g
(3)
(4)
m
where cxm ∈ {axm , bxm} depends on the sublattice and
the unit cell xm at which the m'th QEs couples to the
bath. We use the notation σm
µν = µ(cid:105)m(cid:104)ν, µ, ν ∈ {e, g},
for the m'th QE operator. We highlight that we use a
rotating-wave approximation, such that only excitation-
conserving terms appear in HI .
Methods.
In the next sections, we study the dy-
namics emerging from the global QE-bath Hamiltonian
H = HS + HB + HI using several complementary ap-
proaches. When one is only interested in the QE dynam-
ics, and the bath can be effectively traced out, the fol-
lowing Born-Markov master equation [22] describes the
evolution of the reduced density matrix ρ of the QEs:
ρ = i[ρ, HS] + i
J αβ
mn
egσn
ge
(cid:2)ρ, σm
(cid:3)
geρσm
eg − σm
egσn
geρ − ρσm
egσn
ge
(cid:3) .
(5)
(cid:88)
(cid:2)2σn
n,m
(cid:88)
n,m
+
Γαβ
mn
2
mn, Γαβ
The functions J αβ
mn, which ultimately control the
QE coherent and dissipative dynamics, respectively, are
the real and imaginary part of the collective self-energy
Σαβ
2 . This collective self-energy
mn(∆ + i0+) = J αβ
mn
mn − i Γαβ
depends on the sublattices α, β ∈ {A, B} to which the
m'th and n'th QE couple respectively, as well as on their
relative position xmn = xn − xm. Remarkably, for our
model they can be calculated analytically in the thermo-
dynamic limit (N → ∞) yielding:
(cid:104)
(cid:112)
yxmn+ Θ+(y+) − yxmn
− Θ−(y+)
z4 − 4J 2(1 + δ2)z2 + 16J 4δ2
(cid:105)
,
ΣAA/BB
mn
(z) = −
(6)
g2J [Fxmn (y+)Θ+(y+) − Fxmn (y−)Θ−(y+)]
,
g2z
(cid:112)
ΣAB
mn(z) =
z4 − 4J 2(1 + δ2)z2 + 16J 4δ2
(7)
where Fn(z) = (1 + δ)zn + (1 − δ)zn+1, Θ±(z) =
Θ(±1 ∓ z), Θ(z) is Heaviside's step function, and
(cid:104)
(cid:112)
z2 − 2J 2(1 + δ2)
z4 − 4J 2(1 + δ2)z2 + 16J 4δ2
1
2J 2(1 − δ2)
±
(cid:105)
.
(8)
y± =
However, since we have a highly structured bath this
perturbative description will not be valid in certain
regimes, e.g., close to band-edges, and we will use re-
solvent operator techniques [23] or fully numerical ap-
proaches to solve the problem exactly for infinite/finite
bath sizes, respectively. Since those methods were ex-
plained in detail in other works, here we focus on the
results and leave the details for the Supp. Material.
III. BAND-GAP REGIME
In this Section we assume that the QEs are in the band-
gap regime, that is, their transition frequency lies outside
of the two bands of the photonic bath. From here on, we
only discuss results in the thermodynamic limit (when
N → ∞) such that the edge states [21] play no role in the
QE dynamics. We refer the interested reader to Refs. [24]
and Supp. Material to see some of the consequences the
edge states have on the QE dynamics.
A. Single QE: dynamics
Let us start considering the dynamics of a single ex-
cited QE, i.e., ψ(0)(cid:105) = e(cid:105)vac(cid:105), where vac(cid:105) denotes the
vacuum state of the lattice of bosonic modes. Since H
conserves the number of excitations, the global wavefunc-
tion at any time reads:
Ce(t)σeg +
N(cid:88)
(cid:88)
j=1
α=a,b
g(cid:105)vac(cid:105) . (9)
Cj,α(t)α†j
ψ(t)(cid:105) =
In both perturbative and exact treatments, the dy-
namics of Ce(t) can be shown (see Refs. [23] and Supp.
3
FIG. 2. Single QE dynamics. Probability to find the
emitter in the excited state, Ce(t)2, for different values of
δ. The other parameters are ∆ = 0 (middle of the band
gap) and g = 0.4J. As the band gap closes, i.e., δ → 0,
the decay becomes stronger. Dashed lines mark the value of
Ce(t → ∞)2 =(cid:0)1 + g2
4J 2δ
(cid:1)−2.
(cid:112)
Material) to depend only on the single QE self-energy:
Σe(z) =
g2z sign(y+ − 1)
,
(10)
z4 − 4J 2(1 + δ2)z2 + 16J 4δ2
obtained from Eq. 6 defining: Σe(z) ≡ ΣAA
nn (z). From
i)
here, we can already extract several conclusions:
Σe(z) is independent of the sign of δ, which means
that the spontaneous emission dynamics is insensitive to
the topology of the bands.
ii) Perturbative approaches,
like the Born-Markov approximation of Eq. 5, predict
an exponential decay of excitations at a rate Γe(∆) =
−2ImΣe(∆ + i0+), which is strictly zero in the band-gap
regime. Thus, one expects that the excitation remains
localized in the QE at any time. However, in Fig. 2 we
compute the exact dynamics Ce(t) for several δ's and ob-
serve that this perturbative limit is only recovered in the
limit of δ → 1. On the contrary, when δ (cid:28) 1 and δ (cid:54)= 0
the dynamics displays fractional decay and oscillations.
As it happens with other baths [25], the origin of this dy-
namics stems from the emergence of photon bound states
(BSs) which localize around the QEs [26 -- 28]. However,
the BSs appearing in the present topological waveguide
bath have some distinctive features with no analogue in
other systems, and therefore deserve special attention.
B. Single QE: Bound states
The energy and wavefunction of the BSs in the single-
excitation subspace can be obtained by solving the secu-
lar equation HΨBS(cid:105) = EBSΨBS(cid:105), with EBS lying out
020406080100time[J−1]0.00.20.40.60.81.0Ce(t)2δ=0.70.50.30.10.05 4
FIG. 3. Bound state properties. (A) BS wavefunction for a QE placed at j = 0 that couples to the A sublattice; δ = 0.2
and g = 0.4J. Probability amplitudes Cj,a are shown in blue, while the Cj,b are shown in red. The QE frequency is set to
∆ = 2.2J (top row), ∆ = 0 (middle row) and ∆ = −2.2J (bottom row). The first column corresponds to the model without
disorder, the second to the model with disorder in the couplings between cavities and the third to the model with disorder in
the cavities resonant frequencies. In both cases with disorder its strength is set to w = 0.5J. For each case, the value of the
bound state's energy is shown at the bottom of the plots. (B) Inverse bound state localization length for the two different
models of disorder as a function of the disorder strength. Parameters: g = 0.4J, δ = 0.5. The dots correspond to the average
value computed with a total of 104 instances of disorder, and the error bars mark the value of one standard deviation above
and below the average value (the blue curves are slightly displaced to the right for better visibility). Two cases are shown
which correspond to ∆ (cid:39) 2.06J (triangles, outer band gaps), and ∆ = 0 (circles, inner band gap). (C) Absolute value of the
dipolar coupling for ∆ = 0 and g = 0.4J; Markov (solid line), exact (dots). The insets show the shape of the bound states in
the topological and the trivial phases. The situation for the BA configuration is the same, reversing the role of δ.
of the bands, and ΨBS(cid:105) in the form of Eq. (9), but
with time-independent coefficients. Without loss of gen-
erality, we assume that the QE couples to sublattice A
at the j = 0 cell. After some algebra, one can find
that the energy of the BS is given by the pole equation:
EBS = ∆ + Σe(EBS). Irrespective of ∆ or g, there exist
always three BS solutions of the pole equation (one for
each band-gap region). This is because the self-energy di-
verges in all band-edges, which guarantees finding a BS in
each of the band-gaps [29, 30]. The main difference with
respect to other BSs [26 -- 30] appears in the wavefunction
amplitudes, which read
(cid:90) π
(cid:90) π
−π
dk
−π
eikj
dk
E2
BS − ω2(k)
ω(k)ei[kj−φ(k)]
,
E2
BS − ω2(k)
,
(11)
(12)
gEBSCe
Cj,a =
2π
gCe
2π
Cj,b =
where Ce is a constant obtained from the normalization
condition that is directly related with the long-time pop-
(cid:1)−2
.
4J 2δ
ulation of the excited state in spontaneous emission. For
example, in Fig. 2 where ∆ = 0, it can be shown to be
Ce(t → ∞)2 = Ce4 =(cid:0)1 + g2
From Eqs. 11-12, we can extract several properties of
the spatial wavefunction distribution. On the one hand,
above or below the bands (outer band gaps) the largest
contribution to the integrals is that of k = 0, thus all
the Cj,α have the same sign (see left column of Fig. 3A
top and bottom row).
In the lower (upper) band-gap,
Cj,α of the different sublattices has the same (opposite)
sign. On the other hand, in the inner band gap, the main
contribution to the integrals is that of k = π. This gives
an extra factor (−1)j to the coefficients Cj,α (see Fig. 3A
middle row). Furthermore, the probability amplitudes of
the sublattice which the QE couples to are symmetric
with respect to the position of the QE, whereas they are
asymmetric in the other sublattice, that is, the BSs are
chiral. Changing δ from positive to negative results in a
spatial inversion of the BS wavefunction. The asymmetry
ABC of the BS wavefunction is more extreme in the middle of
the band-gap (∆ = 0). For example, if δ > 0, the BS
wavefunction with EBS = 0 is given by Cj,a = 0 and
gCe(−1)j
J(1+δ)
0 ,
(cid:17)j
(cid:16) 1−δ
1+δ
Cj,b =
,
j ≥ 0
j < 0
,
(13)
the usual behavior for 1D baths λBS ∼ 1/(cid:112)
whereas for δ < 0 the wavefunction decays for j < 0
while being strictly zero for j ≥ 0. At this point, the
BS decay length diverges as λBS ∼ 1/(2δ) when the gap
closes. Away from this point, the BS decay length shows
∆edge, with
∆edge being the smallest detuning between the QE and
the band-edge frequencies.
(cid:17)
HB → HB +(cid:80)
HB → HB +(cid:80)
The physical intuition of the appearance of such chiral
BS at EBS = 0 is that the QE with ∆ = 0 acts as an
effective edge in the middle of the chain, or equivalently,
as a boundary between two semi-infinite chains with dif-
ferent topology. This picture provides us with an insight
useful to understand other results of the manuscript: de-
spite considering the case of an infinite bath, the local
QE-bath coupling inherits information about the under-
lying bath topology. In fact, one can show that this chi-
ral BS has the same properties as the edge-state which
appears in a semi-infinite SSH chain in the topologi-
cally non-trivial phase, for example,
inheriting its ro-
bustness to disorder. To illustrate it, we study the ef-
fect of two types of disorder: one that appears in the
cavities bare frequencies (diagonal), and another one
that appears in the tunneling amplitudes between them
(off-diagonal). The former corresponds to the addition
of random diagonal terms to the bath's Hamiltonian
and breaks the chi-
ral symmetry of the original model, while the latter cor-
responds to the addition of off-diagonal random terms
and pre-
serves it. We take the ν,j, ν = a, b, 1, 2, from a uni-
form distribution within the range [−w/2, w/2] for each
j'th unit cell. To prevent changing the sign of the cou-
pling amplitudes between the cavities, w is restricted to
w/2 < (1 − δ) in the case of off-diagonal disorder.
In the middle (right) column of Fig. 3A we plot the
shape of the three BS appearing in our problem for a
situation with off-diagonal (diagonal) disorder with w =
0.5J. There, we observe that while the upper and lower
BS get modified for both types of disorder, the chiral BS
has the same protection against off-diagonal disorder as a
regular SSH edge-state: its energy is pinned at EBS = 0
as well as keeping its shape with no amplitude in the
sublattice to which the QE couples to. On the contrary,
for diagonal disorder the middle BS is not protected any
more and may have weight in both sublattices.
1,jb†jaj + 2,ja†j+1bj + H.c.
a,ja†jaj + b,jb†jbj
(cid:16)
(cid:16)
(cid:17)
j
j
Finally, to make more explicit the different behaviour
with disorder of the middle BS compared to the other
ones, we compute their localization length λBS as a func-
tion of the disorder strength w averaging for many re-
alizations.
In Fig. 3B we plot both the average value
5
(markers) of λ−1
BS and its standard deviation (bars) for
the cases of the middle (blue circles) and upper (pur-
ple triangles) BSs. Generally, one expects that for weak
disorder, states outside the band regions tend to delo-
calize, while for strong disorder all eigenstates become
localized (see, for example, Ref. [31]). In fact, this is the
behaviour we observe for the upper BS for both types of
disorder. However, the numerical results suggest that for
off-diagonal disorder the chiral BS never delocalizes (on
average). Furthermore, the chiral BS localization length
is less sensitive to the disorder strength w manifested in
both the large initial plateau region as well as the smaller
standard deviations compared to the upper BS results.
Summing up, a QE coupled locally to an SSH bath:
i) localizes a photon only at one side of the emitter de-
pending on the sign of δ, ii) with no amplitude in the
sublattice where the QE couples to, iii) with the same
properties as the topological edge states, e.g., robustness
to disorder. As we discuss in more detail in the Supp.
Material, the SSH bath is the simplest one-dimensional
bath that provides all these features simultaneously.
C. Two QEs
Let us now focus on the consequences of such exotic BS
when two QEs are coupled to the bath. For concreteness,
we focus on a parameter regime where the Born-Markov
approximation is justified, although we have performed
an exact analysis in the Supp. Material. From Eq. 5, it
is easy to see that in the band-gap regime, the interac-
tion with the bath leads to an effective unitary dynamics
governed by the following Hamiltonian:
(cid:0)σ1
ge + H.c.(cid:1) .
Hdd = J αβ
12
egσ2
(14)
That is, the bath mediates dipole-dipole interactions be-
tween the QEs. One way to understand the origin of
these interactions is that the emitters exchange virtual
photons through the bath, which in this case are local-
ized around the emitter. In fact, these virtual photons
are nothing but the photon BS that we studied in the
previous Section. Thus, these interactions J αβ
mn inherit
many properties of the BSs. For example, the interac-
tions are exponentially localized in space, with a localiza-
tion length that can be tuned and made large by setting
∆ close to the band-edges, or fixing ∆ = 0 and letting
the middle band-gap close (δ → 0). Moreover, one can
also change qualitatively the interactions by moving ∆
to different band-gaps: for ∆ > 2J all the J αβ
mn have the
same sign, while for ∆ < 2δJ they alternate sign as
xmn increases. Also, changing ∆ from positive to neg-
ative changes the sign of J AA/BB
, but leaves unaltered
J AB/BA
are insensitive to
mn
the bath's topology, the J AB/BA
mimic the dimerization
of the underlying bath, but allowing for longer range cou-
plings. The most striking regime is again reached for
∆ = 0. In that case J AA/BB
identically vanish, and thus
. Furthermore, while J AA/BB
mn
mn
mn
mn
the QEs only interact if they are coupled to different sub-
lattices. Furthermore, in such a situation the interactions
have a strong directional character, i.e., the QEs only in-
teract if they are in some particular order. Assuming
that the first QE at x1 couples to sublattice A, and the
second one at x2 couples to B, we have
(cid:17)x12
(cid:16) 1−δ
1+δ
sign(δ) g2(−1)x12
0
Θ(δ)
J(1+δ)
g2
J(1+δ)
J AB
12 =
if δ · x12 > 0 .
if δ · x12 < 0 .
if x12 = 0 .
(15)
In Fig. 3C we plot the absolute value of the coupling
for this case computed exactly, and compare it with the
Markovian formula. Apart from small deviations at short
distances, it is important to highlight that the directional
character agrees perfectly in both cases.
D. Many QEs: Spin models with topological
long-range interactions
One of the main interests of having a platform with
BS-mediated interactions is to investigate spin models
with long-range interactions [32, 33]. The study of these
models has become an attractive avenue in quantum sim-
ulation because long-range interactions are the source
of non-trivial many-body phases [34] and dynamics [35],
and are also very hard to treat classically.
Let us now investigate how the shape of the QE in-
teractions inherited from the topological bath translate
into different many-body phases at zero temperature as
compared to those produced by long-range interactions
appearing in other setups such as trapped ions [34, 35],
or standard waveguide setups. For that, we consider hav-
ing Ne emitters equally spaced and alternatively coupled
to the A/B lattice sites. After eliminating the bath, and
adding a collective field with amplitude µ to control the
number of spin excitations, the dynamics of the emitters
(spins) is effectively given by:
(cid:2)J AB
mn
(cid:0)σm,A
eg σn,B
(cid:88)
m,n
ge + H.c.(cid:1)
(cid:0)σm,A
µ
2
−
(cid:1)(cid:105)
,
(16)
z + σn,B
z
Hspin =
ν
denoting by σn,α
, ν = x, y, z, the corresponding Pauli
matrix acting on the α ∈ {A, B} site in the n'th unit
cell. The J αβ
mn are the spin-spin interactions derived in the
previous subsection, whose localization length, denoted
by ξ, and functional form can be tuned through system
parameters such as ∆.
For example, when the lower (upper) BS mediates the
interaction, the J αβ
mn has negative (alternating) sign for all
sites, similar to the ones appearing in standard waveguide
setups. When the range of the interactions is short (near-
est neighbor), the physics is well described by the ferro-
magnetic XY model with a transverse field [36], which
6
goes from a fully polarized phase when µ dominates
to a superfluid one in which spins start flipping as µ
decreases. In the case where the interactions are long-
ranged the physics is similar to that explained in Ref. [34]
for power-law interactions (∝ 1/r3). The longer range of
the interactions tends to break the symmetry between the
ferro/antiferromagnetic situations and leads to frustrated
many-body phases. Since similar interactions also appear
in other scenarios (standard waveguides or trapped ions),
we now focus on the more different situation where the
middle BS at ∆ = 0 mediates the interactions, such that
the coefficients J AB
mn have the form of Eq. (15).
In that case, the Hamiltonian Hspin of Eq. 16 is very
unusual:
i) spins only interact if they are in different
sublattices, i.e., the system is bipartite ii) the interaction
is chiral in the sense that they interact only in case they
are properly sorted: the one in lattice A to the left/right
of that in lattice B, depending on the sign of δ. Note that
δ also controls the interaction length ξ.
In particular,
for δ = 1 the interaction only occurs between nearest
neighbors, whereas for δ → 0, the interactions become
of infinite range. These interactions translate into a rich
phase diagram as a function of ξ and µ, which we plot in
Fig. 4A for a small chain with Ne = 20 emitters (obtained
with exact diagonalization). Let us guide the reader into
the different parts:
• The region with maximum average magnetization
(in white) corresponds to the places where µ dom-
inates such that all spins are alligned upwards.
• Now,
if we decrease µ from this fully polarized
phase in a region where the localization length is
short, i.e., ξ ≈ 0.1, we observe a transition into
a state with zero average magnetization. This be-
haviour can be understood because in that short-
range limit J AB
mn only couples nearest neighbor AB
sites, but not BA sites as shown in the scheme of
the lower part of the diagram for δ > 0 (the oppo-
site is true for δ < 0). Thus, the ground state is a
product of nearest neighbor singlets (for J > 0) or
triplets (for J < 0). This state is usually referred
to as Valence-Bond Solid in the condensed matter
literature [37]. Note, the difference between δ ≷ 0
is the presence (or not) of uncoupled spins at the
edges.
• However, when the bath allows for longer range in-
teractions (ξ > 1), the transition from the fully
polarized phase to the phase of zero magnetiza-
tion does not occur abruptly but passing through
all possible intermediate values of the magnetiza-
tion. Besides, we also plot in Fig. 4B the spin-spin
correlations along the x and z directions (note the
symmetry in the xy plane) for the case of µ = 0
to evidence that a qualitatively different order ap-
pears as ξ increases. In particular, we show that
the spins align along the x direction with a dou-
ble periodicity, which we can pictorially represent
7
FIG. 4. Spin models: phase diagram and correlations.
(A) Ground state average polarization obtained by exact
diagonalization for a chain with Ne = 20 emitters with frequency tuned to ∆ = 0 as a function of the chemical potential µ
and the decay length of the interactions ξ. The different phases discussed in the text, a Valence-Bond Solid (VBS) and a
Double N´eel ordered phase (DN) are shown schematically below, on the left and right respectively. Interactions of different
sign are marked with links of different color. For the VBS we show two possible configurations corresponding to δ < 0 (top)
and δ > 0 (bottom). In the topologically non-trivial phase (δ < 0) two spins are left uncoupled with the rest of the chain. (B)
Correlations Cν (r) = (cid:104)σ9
(cid:105), ν = x, y, z [Cx(r) = Cy(r)] for the same system as in (A) for different interaction
lengths, fixing µ = 0 (left column). Correlations for different chemical potentials fixing ξ = 5, darker colors correspond to
lower chemical potentials (right column). Note we have defined a single index r that combines the unit cell position and the
sublattice index. The yellow dashed line marks the value of 1/2 expected when the interactions are of infinite range.
ν(cid:105)(cid:104)σ9+r
(cid:105) − (cid:104)σ9
ν σ9+r
ν
ν
by ↑↑↓↓↑↑ . . .(cid:105)x, and that we label as double N´eel
order states. Such orders have been predicted as
a consequence of frustration in classical and quan-
tum spin chains with competing nearest and next-
nearest neighbour interactions [38 -- 40], introduced
to describe complex solid state systems such as
multiferroic materials [41]. In our case, this order
emerges in a system which has long-range inter-
actions but no frustration as the system is always
bipartite regardless the interaction length.
To gain analytical intuition of this regime, we take the
limit ξ → ∞, where the Hamiltonian (16) reduces to
z
A/B =(cid:80)
eg
H(cid:48)spin = U HspinU† (cid:39) J(S+
A S−B + H.c.) ,
(17)
n∈Zodd
where S+
σn,A
z σn,B
tary transformation U = (cid:81)
n σn,A/B
, and we have performed a uni-
, to cancel
the alternating signs of J AB
mn . Equality in Eq. (17) occurs
for a system with periodic boundary conditions, while
for finite systems with open boundary conditions some
corrections have to be taken into account due to the fact
that not all spins in one sublattice couple to all spins in
the other but only to those to their right/left depending
on the sign of δ. The ground state is symmetric under
(independent) permutations in A and B. In the thermo-
dynamic limit we can apply mean field, which predicts
symmetry breaking in the spin xy plane. For instance, if
J < 0 and the symmetry is broken along the spin direc-
tion x, the spins will align so that (cid:104)(Sx
B)2(cid:105) =
(cid:104)Sx
A)2(cid:105) = (cid:104)(Sx
B(cid:105)2 = (Ne/2)2 .
B(cid:105) = (Ne/2)2, and (cid:104)Sx
A(cid:105)2 = (cid:104)Sx
ASx
Since Ne is finite in our case, the symmetry is not
broken, but it is still reflected in the correlations, so that
(cid:104)σm,A
ν
σn,A
ν
(cid:105) (cid:39) (cid:104)σm,A
ν
σn,B
ν
(cid:105) (cid:39) 1/2 ,
(18)
with ν = x, y. In the original picture with respect to U ,
we obtain the double N´eel order observed in Fig. 4B. As
can be understood, the alternating nature of the inter-
actions is crucial for obtaining this type of ordering. Fi-
nally, let us mention that the topology of the bath trans-
lates into the topology of the spin chain in a straightfor-
ward manner: regardless the range of the effective inter-
actions, the ending spins of the chain will be uncoupled
to the rest of spins if the bath is topologically non-trivial.
This discussion shows the potential of the present setup
to act as a quantum simulator of exotic many-body
phases not possible to simulate with other known setups.
The full characterization of such spin models with topo-
logical long-range interactions is interesting on its own
and we will present it elsewhere.
IV. BAND REGIME
Here, we study the situation when QEs are resonant
with one of the bands. For concreteness, we only present
two results where the unconventional nature of the bath
plays a prominent role, namely, the emergence of unex-
pected super/subradiant states, and their consequences
when a single-photon scatters into one or two QEs.
AB A. Dissipative dynamics: super/subradiance
The band regime is generally characterized by inducing
non-unitary dynamics in the QEs. However, when many
QEs couple to the bath there are situations in which the
interference between their emission may enhance or sup-
press (even completely) the decay of certain states. This
phenomenon is known as super/subradiance [19], respec-
tively, and it can be used, e.g., for efficient photon stor-
age [42] or multiphoton generation [43]. Let us illustrate
this effect with two QEs: In that case, the decay rate of
a symmetric/antisymmetric combination of excitations is
Γe ± Γ12. When Γ12 = ±Γe, these states decay at a rate
that is either twice the individual one or zero. In this lat-
ter case they are called perfect subradiant or dark states.
In standard one-dimensional baths Γ12(∆) =
(cid:1), so the dark states are such that
Γe(∆) cos(cid:0)k(∆)xmn
the wavelength of the photons involved, k(∆), allows
for the formation of a standing wave between the QEs
when both try to decay, i.e., when k(∆)xmn = nπ, with
n ∈ Z. Thus, the emergence of perfect super/subradiant
states solely depends on the QE frequency ∆, bath energy
dispersion ω(k), and their relative position xmn, which is
the common intuition for this phenomenon.
This common wisdom gets modified in the bath con-
sidered along this manuscript, where we find situations
in which, for the same values of xmn, ω(k) and ∆, the
induced dynamics is very different depending on the sign
of δ.
In particular, when two QEs couple to the A/B
sublattice respectively, the collective decay reads:
12 (∆) = Γesign(∆) cos(cid:0)k(∆)x12 − φ(∆)(cid:1) ,
(cid:104) ∆2−2J 2(1+δ2)
(cid:105)
which depends both on the photon wavelength mediating
the interaction k(∆) = arccos
, an even
function of δ, and on the phase φ(∆) ≡ φ(k(∆)), sensitive
to the sign of δ. This φ-dependence enters through the
system-bath coupling when rewriting HI in Eq. 4 in terms
of the eigenoperators uk, lk. The intuition behind it is
that even though the sign of δ does not play a role in
2J 2(1−δ2)
ΓAB
(19)
the bath properties of an infinite system, when the QEs
couple to it, the bath embedded between them is different
for δ ≷ 0, making the two situations inequivalent.
8
Using Eq. 19, we find that
to obtain a per-
fect a super/subradiant state it must be satisfied:
k(∆s)x12 − φ(∆s) = nπ, n ∈ N. They come in pairs:
If ∆s is a superradiant (subradiant) state in the upper
band, −∆s is a subradiant (superradiant) state in the
lower band.
In particular, it can be shown that when
δ < 0, the super/subradiant equation has solutions for
n = 0, . . . , x12, while if δ > 0, the equation has solutions
for n = 0, . . . , x12 + 1. Besides, the detunings, ∆s at
which the subradiant states appear also satisfy that
J AB
12 (∆s) ≡ 0, which guarantees that these subradiant
states survive even in the non-Markovian regime (with
a correction due to retardation which is small as long
as x12Γe(∆)/(2vg(∆)) (cid:28) 1). Apart from inducing
different decay dynamics, these different conditions for
super/subradiance at fixed ∆ also translate in different
reflection/transmission coefficients when probing the
system through photon scattering, as we show next.
B. Single-photon scattering
The scattering properties of a single photon imping-
ing into one or several QEs in the ground state can be
obtained by solving the secular equation with energies
HΨk(cid:105) = ±ωkΨk(cid:105), with the ± sign depending on the
band we are probing [44]. Here, we focus on the study of
the transmission amplitude t (see scheme of Fig. 5A) for
two different situations: i) a single QE coupled to both
cavity A and cavity B in the same unit cell with coupling
constants gα and g(1 − α), such that we can interpolate
between the case where the QE couples only to sublattice
A (α = 1) or B (α = 0), ii) and a pair of emitters in the
AB configuration separated x12 unit cells. After some
algebra, we find the exact formulas for the transmission
coefficients for the two situations:
2iJ(1 − δ) sin(k)(cid:2)J(1 + δ)(±ωk − ∆) − g2α(1 − α)(cid:3)
kei2(kx12−φ) − [g2ωk ± i2J 2(1 − δ2)(±ωk − ∆) sin(k)]2 .
(cid:2)2J 2(1 − δ2)(±ωk − ∆) sin(k)(cid:3)2
2iJ 2(1 − δ2)(±ωk − ∆) sin(k) + g2ωk [2α(1 − α)(e−iφ ∓ 1) ± 1]
g4ω2
t1QE =
t2QE =
,
(20)
(21)
In Fig. 5B, we plot the single-photon transmission
probability t2 as a function of the frequency of the in-
cident photon for the single (left) and two QE (right)
situations. Let us now explain the different features ob-
served:
Single QE: We first plot in dashed orange the results
for α = 0, 1, showing well known features for this type of
systems [44], namely, a perfect transmission dip (t2 =
0) when the frequency of the incident photon matches
exactly that of the QEs. This is because the Lamb-shift
induced by the bath in this situation is δωe = 0. The
dip has a band-width defined by the individual decay
9
12
in the single QE scenario since now the responses are
also qualitatively different: While the case δ > 0 fea-
tures a single transmission dip at the QEs frequency,
for δ < 0 the transmission dip is followed by a win-
dow of frequencies with perfect photon transmission, i.e,
t2QE2 = 1. A convenient picture to understand this
behaviour is depicted in Fig. 5A, where we show that a
single photon only probes the symmetric/antisymmetric
states in the single excitation subspace (S/A) with the
following energies (linewidths) renormalized by the bath
ωS,A = ∆ ± J AB
(ΓS,A = Γe ± Γ12). For the pa-
rameters chosen (see caption) it can be shown that for
δ > 0 the QEs are in a perfect super/subradiant config-
uration in which one of the states decouples while the
other one has 2Γe decay rate. Thus, at this configura-
tion the two QEs behave like a single two-level system
with an increased linewidth. On the other hand, when
δ < 0 both the (anti)symmetric states are coupled to
the bath, such that the system is analogous to a V-type
system where perfect transmission occurs for an incident
frequency ±ωk,EIT = (ωSΓA−ωAΓS)/(ΓA−ΓS) [45] (de-
picted in dashed black).
In both the single and two QE situations the different
response can be intuitively understood as the QEs cou-
ple locally to a different bath for δ ≷ 0. However, this
different response of t2 can be thought as an indirect
way of probing topology in these systems.
V.
IMPLEMENTATIONS
One of the attractive points of our predictions is that
they can be potentially observed in several platforms by
combining tools which, in most of the cases, have already
been experimentally implemented independently. Some
candidate platforms are:
• Photonic crystals. The photonic analogue of the
SSH model has been implemented in several pho-
tonic platforms [6, 10 -- 12], including some recent
photonic crystal realizations [7]. The latter are
particularly interesting due to the recent advances
in their integration with solid-state and natural
atomic emitters (see Refs. [46, 47] and references
therein).
• Circuit QED. Superconducting metamaterials
mimicking standard waveguide QED are now be-
ing routinely built and interfaced with one or many
qubits in experiments [48, 49]. The only missing
piece is the periodic modulation of the couplings to
obtain the SSH model, for which there are already
proposals using circuit superlattices [50].
• Cold-atoms. Quantum optical phenomena can be
simulated in pure atomic scenarios by using state-
dependent optical lattices. The idea is to have
two different trapping potentials for two atomic
metastable states, such that one state mostly local-
izes, playing the role of QEs, while the other state
(cid:1) /√2
e(cid:105)1g(cid:105)2 ± g(cid:105)1e(cid:105)2
mon ground state, while S, A(cid:105) = (cid:0)
FIG. 5. Single-photon scattering. (A) Pictorial represen-
tation of the scattering process: An incident photon impinges
into a scatterer, part of which is reflected (transmitted) with
probability amplitude r (t). Lower row: Relevant level struc-
ture for the single photon scattering for both scatterers con-
sidered: one and two QEs. gg(cid:105) ≡ g(cid:105)1g(cid:105)2 denotes the com-
denotes the symmetric (antisymmetric) excited state combi-
nation of the two QEs. (B) Transmission probability for a
single emitter coupled to both A and B cavities of the same
unit cell (left panel) and two emitters in the AB configura-
tion separated a total of x12 = 2 unit cells (right panel). The
parameters in the single emitter case are: g = 0.4J, δ = ±0.5
and ∆ = 1.5J. The dashed line corresponds to the case where
the emitter couples to a single sublattice (α = 0, 1) (does not
depend on the sign of δ). When the emitter couples to both
sublattices (α = 0.3), the perfect-reflection resonance experi-
ences a shift that is different for δ > 0 (purple line) or δ < 0
(blue line). The parameters for the two emitter case are:
g = 0.1J, δ = ±0.5, and ∆ (cid:39) 1.65J for which the two QE are
in a subradiant configuration if δ > 0.
rate Γe. Besides, it also shows t2 = 0 at the band-
edges due to the divergent decay rate at these frequencies,
also predicted for standard waveguide setups [44]. The
situation becomes more interesting for 0 < α < 1, since
the QE energy is shifted by δωe = g2α(1− α)/[J(1 + δ)],
which is different for ±δ. This is why the dips in t1QE2
appear at different frequencies for δ = ±0.3. Notice t1QE
is invariant under the transformation α → 1 − α (this is
not true for the reflection coefficient, which acquires a
δ-dependent phase shift for α = 0 but not for α = 1).
Two QEs: In the right panel of Fig. 5B we plot t2QE2
for two QEs coupled equally to a bath (same energy, dis-
tance, and coupling strength), and where the only dif-
ference is the sign of δ of the bath. The distance cho-
sen is small such that retardation effects do not play
a significant role. The differences between δ > 0 and
δ < 0 in the t2QE2 are even more pronounced that
AScatterertrinB 10
VII. ACKNOWLEDGEMENTS
Funding: This work has been supported by the Span-
ish Ministry of Economy and Competitiveness through
grants No. MAT2017-86717-P and BES-2015-071573.
AGT and JIC acknowledge the ERC Advanced Grant
QENOCOBA under the EU Horizon 2020 program
(grant agreement 742102). MB, GP, and AGT acknowl-
edge support from CSIC Research Platform on Quantum
Technologies PTI-001. Competing Interests: The
authors declare that they have no competing interests.
Data and materials availability: All data needed to
evaluate the conclusions in the paper are present in the
paper and/or the Supplementary Materials. Additional
data available from authors upon request. Author con-
tributions: MB and AGT conceived the original idea,
MB did the analytical and numerical analysis under the
supervision of AGT. All authors discussed and analyzed
the results. MB and AGT wrote the manuscript with
input from all authors.
propagates as a matter-wave. This proposal [51]
has been recently used [52] to explore the physics
of standard waveguide baths. Replacing their po-
tential by an optical superlattice made of two laser
fields with different frequencies, one would be able
to probe the physics of the topological SSH bath.
In fact, these cold-atoms superlattices have already
been implemented in an independent experiment to
measure the Zak phase of the SSH model [53].
Beyond these platforms, the bosonic analogue of the
SSH model has also been discussed in the context of
metamaterials [54] or plasmonic and dielectric nanopar-
ticles [55, 56], where the predicted phenomena could as
well be potentially observed.
VI. CONCLUSIONS & OUTLOOK
Summing up, we have presented several phenomena
appearing in a topological waveguide QED system with
no analogue in other optical setups. When the quantum
emitter frequencies are tuned to the middle band-gap,
we predict the appearance of chiral photon bound states
which inherit the topological robustness of the bath. Fur-
thermore, we also show how these bound states mediate
directional, long-range spin interactions, leading to ex-
otic many-body phases, e.g., double-N´eel ordered states,
which cannot be obtained to our knowledge with other
bound-state mediated interactions. Besides, we study the
scattering and super/subradiant behaviour when one or
two emitters are resonant with one of the bands, finding
that transmission amplitudes can depend on the param-
eter which controls the topology even though the band
energy dispersion is independent of it.
Except for the many-body physics, the rest of the phe-
nomena discussed in this article, that is, the formation
of chiral bound states and the peculiar scattering proper-
ties, could also be observed in classical setups, since these
results are derived within the single-excitation regime.
Given the simplicity of the model and the variety of plat-
forms where it can be implemented, we foresee that our
predictions can be tested in near-future experiments.
As an outlook, we believe our work opens complemen-
tary research directions on topological photonics, which
currently focuses more on the design of exotic light prop-
erties [10 -- 12, 57, 58]. For example, the study of the emer-
gent spin models with long-range topological interactions
is interesting on its own and might lead to the discovery
of novel many-body phases. Moreover, the scattering-
dependent phenomena found along the manuscript can
provide alternative paths for probing topology in pho-
tonic systems. On the fundamental level, the analytical
understanding we develop for one-dimensional systems
provides a solid basis to understand quantum optical ef-
fects in higher dimensional topological baths [59, 60].
Supplemental Material: Unconventional quantum optics in topological waveguide
QED.
11
In this Supp. Material, we provide more details on:
i) the exact integration of the quantum emitter (QE)
dynamics using resolvent operator techniques,
in Sec-
tion S1; ii) the study of asymptotic long-time decay, in
Section S2; iii) the exact integration of the two QEs dy-
namics, in Section S3;
iv) the derivation of the exact
conditions of existence of two QE bound states, in Sec-
tion S4; v) the effect of the edge states on the QE dy-
namics when they are coupled to finite size baths, in Sec-
tion S5; vi) a review of bipartite one-dimensional baths
and the properties of the middle bound-states, in Sec-
tion S6.
S1.
INTEGRATION OF THE DYNAMICS
FIG. S1. Schematics showing the contour of integration. At
the band edges the path changes from the first to the second
Riemann sheet of the Green function (shaded areas).
should subtract the detours taken at the branch cuts.
Their contribution can be computed as
CBC,j(t) = ±
1
2π×
(cid:104)
(cid:90) ∞
0
(cid:105)
dy
GI
e(xj − iy) − GII
e (xj − iy)
e−i(xj−iy)t ,
(S3)
with xj ∈ {±2J,±2δJ}. The sign has to be chosen
positive if when going from xj + 0+ to xj − 0+ the inte-
gration goes from the first to the second Riemann sheet,
and negative if it is the other way around.
Plotting the absolute value of the different contribu-
tions at time t = 0, we can deduce the relevant physics
involved in the QE dynamics, see Fig. S2(a). Not surpris-
ingly, when the emitter's transition frequency lays in the
bands of allowed bath modes it will decay emitting a pho-
ton into the bath. In Fig. S2(b), we compare the actual
decay rate with the prediction given by the Markovian
approximation. On the other hand, when it lays outside
the bands, a bound state will form in which the emit-
ter is mostly in the excited state and part of the photon
remains trapped around it. This is what we observe in
Fig. 2 in the main text, where the long-term dynamics
is dominated by the bound state at zero energy, whose
residue can be computed as R0 = [1 + g2/(J 24δ)]−1.
Since the global Hamiltonian H conserves the number
of excitations, if a QE is initially excited with no pho-
tons in the bath, i.e., ψ(0)(cid:105) = e(cid:105)vac(cid:105) (vac(cid:105) denotes
the vacuum state of the lattice of bosonic modes), the
wavefunction at any time has the form:
Ce(t)σeg +
N(cid:88)
(cid:88)
j=1
α=a,b
ψ(t)(cid:105) =
g(cid:105)vac(cid:105) .
Cj,α(t)α†j
(S1)
The probability amplitude Ce(t) can be computed [23,
61] as the Fourier transform of the Green function of the
emitter Ge(z) = [z − ∆ − Σe(z)]−1:
dE Ge(E + i0+)e−iEt ,
(S2)
(cid:90) ∞
−∞
Ce(t) = −1
2πi
To compute the integral in (S2), we use residue integra-
tion closing the contour of integration in the lower half
of the complex plane. Since the QE Green function has
branch cuts in the real axis along the regions where the
bands of the bath are defined (the continuous spectrum
of H), it is necessary to detour at the band edges to
other Riemann sheets of the function, see Fig. S1. The
formula for the self-energies presented in the main text,
Eq. (10), corresponds to the Green function in the first
Riemann sheet GI
e(z). We can analytically continue it
to the second Riemann sheet GII
e (z) by simply changing
√· → −√· in the denominator of Σe(z).
e(E + i0+) and GII
Since the imaginary part of GI
e (E −
i0+) is nonzero in the band regions, we should only take
into account the real poles of GI
e outside the band re-
gions (zBS) and the complex poles of GII
e with real part
inside band regions (zUP). The residue at both the
real and complex poles can be computed as R(z0) =
[1 − Σ(cid:48)e(z0)]−1, where Σ(cid:48)e(z) denotes the first derivative
of the appropriate function ΣI
e (z). Finally, we
e(z) or ΣII
12
y1/2e−yt
i(2 − x2
0 + 2δ2)
x0
+ O(y)
i(2 − x2
0 + 2δ2)
x0
t−3/2 + O(t−5/2) .
(S7)
series around y = 0,
(cid:115)
4
(cid:115)
g2
K0(t) =
±1
2π
dy
(cid:90) ∞
(cid:39) ±1(cid:112)
0
πg2
Therefore, to leading order D(t)2 ∼ t−3. In Fig. S3 it
is shown an example of this algebraic decay when ∆ is
placed at the lower band edge of the bath's spectrum.
FIG. S3. Decaying part of the dynamics of a single emitter
with parameters ∆ = −2J, δ = 0.5 and g = 0.2J.
eg ± σ2
eg
± = (cid:2)σ1
(cid:3)/√2 couple to orthogonal
The dynamics of two emitters are not much harder
to analyze than that of a single emitter.
It can be
shown that the symmetric and antisymmetric combi-
nations σ†
bath modes [62]. Therefore, the two-emitter problem
can be split in two independent single-emitter problems.
The Green functions associated to the probability am-
plitudes to find the 1st or the 2nd emitter in the ex-
cited state C1,2(t) can be obtained form the Green func-
tions associated to the symmetric/antisymmetric com-
bination of excitations as G1,2(z) = [G+(z) ± G−(z)]/2,
with G±(z) = [z − ∆ − Σ±(z)]−1.
Rewriting the interaction Hamiltonian in the bath's
eigenmode basis, substituting σm
±, and
pairing the terms that go with opposite momentum, we
obtain for the case where the two QEs are on the sublat-
tice A
eg in terms of σ†
Kj(t)e−ixj t ,
(S4)
S3. TWO QE DYNAMICS IN THE
NON-MARKOVIAN REGIME
FIG. S2. Non-Markovian dynamics.
(a) Absolute value of
the different contributions to the single QE dynamics at time
t = 0 as a function of the emitter detuning ∆; bound state
residues R(zBS) (circles), unstable pole residues R(zUP)
(squares) and branch-cut contributions CBC,j(0) (crosses).
The system parameters are δ = 0.5 and g = 0.4J. (b) Com-
parison between the exact decay rate given by the imaginary
part of the complex poles of Ge (diamonds) and the approxi-
mate Markovian decay rate (black lines) for the same param-
eters as in (a)
Defining D(t) ≡ Ce(t) −
times we have
zBS R(zBS)eizBSt, at long
S2. SUB-EXPONENTIAL DECAY
(cid:80)
(cid:88)
(cid:88)
lim
t→∞
D(t) (cid:39)
CBC,j(t) =
j
j
with
Kj(t) = ±1
2π
(cid:90) ∞
dy
0
2Σe(xj − iy)e−yt
(xj − iy − ∆)2 − Σ2
e(xj − iy)
.
(S5)
The long-time average of the decaying part of the dy-
namics can be computed as
(cid:90) t
0
(cid:88)
j
D(t)2 ≡ lim
t→∞
1
t
dt(cid:48)D(t(cid:48))2 =
Kj(t)2 .
(S6)
If the emitter's transition frequency is close to one of the
band edges, ∆ (cid:39) x0, then D(t)2 (cid:39) K0(t)2.
In the
long-time limit, we can expand the integrand in power
00.20.40.60.81(a)00.20.4−3−2−10123(b)R(zj),Cj,BC(0)00.20.40.60.81Γe∆/J00.20.4−3−2−1012310−810−610−410−2101102103∝t−3D(t)2time[J−1]10−810−610−410−2101102103 1 + β cos(kx12)(uk,β + lk,β)σ†β + H.c. ,
k>0
(cid:112)
(cid:88)
(cid:88)
g
ei(kx1+φ) ± ei(kx2+φ)(cid:17)
(cid:104)(cid:16)
√N
ei(kx1+φ) ± ei(kx2+φ)(cid:17)
(cid:104)(cid:16)
β=±
(cid:112)
(cid:112)
2
2
uk,± =
lk,± =
H AA
I =
1
1 ± cos(kx12)
1
1 ± cos(kx12)
(cid:88)
(cid:104)(cid:112)
β=±
1
k>0
(cid:88)
(cid:112)
(cid:112)
(cid:17)
1 + β cos(kx12 − φ) uk,βσ†β +
(cid:17)
(cid:104)(cid:16)
(cid:104)(cid:16)
ei(kx1+φ) ± eikx2
ei(kx1+φ) ∓ eikx2
1 ± cos(kx12 − φ)
1
1 ∓ cos(kx12 − φ)
H AB
I =
g
√N
uk,± =
lk,± =
2
2
uk +
lk +
e−i(kx1+φ) ± e−i(kx2+φ)(cid:17)
(cid:16)
e−i(kx1+φ) ± e−i(kx2+φ)(cid:17)
(cid:16)
(cid:105)
(cid:112)
(cid:17)
(cid:16)
1 − β cos(kx12 − φ) lk,βσ†β
(cid:17)
(cid:16)
e−i(kx1+φ) ± e−ikx2
e−i(kx1+φ) ∓ e−ikx2
lk +
uk +
Here, xn refers to the unit cell where the n'th QE is located, and x12 = x2 − x1 is the signed distance between the
two QEs. For the case where the two QEs are on a different sublattice
13
(S8)
(S9)
(S10)
,
(cid:105)
(cid:105)
u−k
l−k
,
+ H.c. ,
(cid:105)
(cid:105)
u−k
,
l−k
.
(S11)
(S12)
(S13)
(cid:88)
The prefactors in the definition of uk,± and lk,± come
Importantly, these modes are or-
from normalization.
thogonal, they satisfy
[uk,α, u†k(cid:48),α(cid:48)] = [lk,α, l†k(cid:48),α(cid:48)] = δkk(cid:48)δαα(cid:48) .
(S14)
Since ω(k) = ω(−k), we have that the bath Hamilto-
nian is also diagonal in this new basis. The two other
configurations can be analyzed analogously.
From these expressions for the interaction Hamilto-
nian, it is possible to obtain the self-energy for the sym-
metric/antisymmetric states of the two QE. As it turns
out, they have a very simple form: Σαβ
12 , with
Σαβ
12 :
± = Σe±Σαβ
ΣAA/BB
mn
(z; xmn) =
ΣAB
mn(z; xmn) =
g2
N
g2
N
zeikxmn
z2 − ω2(k)
ω(k)ei[kxmn−φ(k)]
k
(cid:88)
k
z2 − ω2(k)
,
,
(S15)
(S16)
where xmn = xn − xm. It can be shown that
ΣBA
mn(z; δ, xmn) = ΣAB
nm(z; δ,−xmn)
= ΣAB
mn(z;−δ, xmn − 1) .
(S17)
S4. EXISTENCE CONDITIONS OF TWO QE
BOUND STATES
We can integrate the dynamics in the same way as we
did for the single QE case, but there are some subtleties
particular to the two QE case. First, the cancellation of
divergences of Σe and Σαβ
12 at some of the band edges
results in critical transition frequencies above (or below)
(cid:27)
(cid:26)
which some bound states cease to exist. For example, in
the symmetric subspace we have that the lower bound
state (EBS < −2J) always exists, while the upper bound
state (EBS > 2J) exists only for ∆ > ∆out
,
c
∆out
c = 2J −
g2(2x12 + 1 − δ)
2J(1 − δ2)
.
(S18)
For the middle bound state there are two possibilities:
either the divergence vanishes at −2δJ, in which case
the bound state will exist for ∆ > ∆mid
, or the divergence
vanishes at 2δJ, then the middle bound state exists for
∆ < ∆mid
. In both cases ∆mid
takes the same form
c
c
c
c = (−1)x12
∆mid
2δJ +
g2[(2x12 + 1)δ − 1]
2J(1 − δ2)
,
(S19)
The situation in the antisymmetric subspace can
be readily understood realizing that ReΣAB
− (z) =
−ReΣAB
+ (−z), which implies that if z = EBS is a solu-
tion of the pole equation for Σαβ
+ with a particular value
of ∆, then z = −EBS is a solution of the pole equation
for Σαβ
− with the opposite value of the emitter transition
frequency. Fig. S4 summarizes at a glance the different
possibilities and the dependence on the bath's topology.
S5. FINITE-BATH DYNAMICS
It is well known that a finite bath with open boundary
conditions in the topologically non-trivial phase (δ < 0)
supports a pair of edge states ES±(cid:105), with opposite ener-
gies HBES±(cid:105) = ±ES±(cid:105), given by (cid:39) J(1 − δ)e−N/λ.
These states are exponentially localized at the edges of
the bath with the same localization length λ as the BSs at
14
nentially localized state in one of the ends of the chain.
Due to this, the photon oscillates between the QE and
the edge whose ending mode is in the sublattice to which
the QE is coupled [see Fig. S5(a)]. The oscillation fre-
quency given by the effective model overestimates the
actual frequency, which can be calculated exactly using
the resolvent operator formalism. We do so by extending
the bath, adding the two edge states, which are orthogo-
nal to all other bath modes. The emitter Green function
becomes now
Ge =
z2 − 2
(z − ∆ − Σe)(z2 − 2) − 2g2z
.
(S22)
The long-term dynamics is given just by the real poles
of this modified Green function. In particular, for ∆ =
0 the denominator is and odd function with three real
roots around the middle of the band gap: z = 0 and
z = ±ω0. It can be shown that the largest contribution
to the dynamics comes from these real poles, such that
Ce(t) (cid:39) R0 + 2R+ cos(ω0t), where R0 denotes the residue
at the pole z = 0, and R+ = R− is the residue at the
poles z = ±ω0.
In Fig. S5(d, e), we show the QE population dy-
namics when two QEs are coupled to the A/B lattices
symmetrically with respect to the middle of the chain,
and for two different situations, i.e., with fixed δ = 0.3
but different sign. As in the individual behaviour, the
collective dynamics is very different depending on the
topological nature of the bath.
In the topologically
trivial bath, the BS mediates perfect coherent transfer
of excitations between the two QEs [see Fig. S5(d)].
In the topologically non-trivial bath, however,
the
edge states become largely populated since they are
quasi-resonant with the QE oscillation,
leading to
additional oscillatory behaviour.
Interestingly, perfect
coherent transfer is still possible at certain times [see
Fig. S5(e)], even though the induced dipolar coupling
is zero. This dynamics can again be captured by a
simple effective Hamiltonian, which written in the basis
{e1(cid:105)g2(cid:105)vac(cid:105),g1(cid:105)e2(cid:105)vac(cid:105),g1(cid:105)g2(cid:105)ES+(cid:105),g1(cid:105)g2(cid:105)ES−(cid:105)}
reads
∆ J AB
J AB
12
g
g
g
12
g
∆ g −g
0
g
−g 0 −
,
FIG. S4. Bound states for the symmetric (continuous) and the
antisymmetric (dashed) subspaces as a function of the QEs
transition frequency in the topological (a) and the trivial (b)
cases; g = 0.8J and x12 = 0. The shaded areas mark the
bath's band regions, where no bound states can be found.
zero energy mentioned in the main text. So far, our cal-
culations have been done in baths large enough such that
the contributions of the topological edge-states could be
neglected. In this section, we consider the effect they can
have in systems with moderate sizes.
In Fig. S5(a -- c) we compare the dynamics of an initially
excited QE coupled to a finite bath (N = 40) in the
topologically non-trivial and trivial phases with the same
δ = 0.3. The induced dynamics is very different: while
most of the QE excitation remains localized around the
QE for a topologically trivial bath, in the non-trivial case
the QE exchanges non-locally the excitation with one of
the edges of the bath. This emergent dynamics can be
captured by a simple effective Hamiltonian considering
only the excited state of the QE and the two edge states
(with the QE in the ground state):
∆ g+ g−
g+
0
g− 0 −
,
Heff =
(S20)
Heff =
(S23)
written here in the basis {e(cid:105)vac(cid:105),g(cid:105)ES+(cid:105),g(cid:105)ES−(cid:105)}.
The coupling constants are g± = g(cid:104)ES±c†x1vac(cid:105) (c†x1 is
equal to a†x1 or b†x1 depending on the sublattice to which
the emitter is coupled) and satisfy g− = g+ ≡ g. Ex-
actly when ∆ = 0, the QE couples more strongly to the
edge states.
In that case, the excited-state probability
amplitude can be computed as
2 + 2g2 cos(ω0t)
Ce(t) (cid:39)
2 − 2g2. Note that a (anti)symmetric su-
with ω0 =
perposition of the edge states corresponds to an expo-
2 + 2g2
(S21)
,
(cid:112)
using the definitions of the edge-states and the coupling
constants g± for each QE that we use in the single QE
dynamics. Solving this Hamiltonian with ∆ = 0, and
assuming (cid:28) g, the excited state occupation probability
of the 1st (2nd) emitter can be well approximated by:
C1(t) ≈ cos(t/2) cos(cid:0)√2gt(cid:1) ,
C2(t) ≈ sin(t/2) cos(cid:0)√2gt(cid:1) .
(S24)
(S25)
which captures qualitatively the double oscillatory be-
haviour of Fig. S5(e). In order to quantitatively capture
−303−303−303−4−3−2−101234−303−4−3−2−101234EBS[J]−303(a)δ=−0.5∆outc∆midcEBS[J]−303(a)δ=−0.5∆outc∆midcEBS[J]∆[J]−303−4−3−2−101234(b)δ=0.5∆outc∆midcEBS[J]∆[J]−303−4−3−2−101234(b)δ=0.5∆outc∆midc 15
FIG. S5. Finite-size effects. (Left panel) Bath dynamics in the topological, δ = −0.3, (a) and trivial, δ = 0.3 (b) regimes, for a
lattice with N = 40 unit cells and open boundary conditions. A single QE with ∆ = 0 is coupled with strength g = 0.2J to the
middle of the bath. The color shows the probability to find the photon in each site of the lattice. Brighter colors correspond to
a higher probability. We have used a different logarithmic scale in each case for clarity. Below (c), it is shown the probability
to find the emitter in the excited state for both the topological (blue) and trivial (red) cases. The dashed black line is a cosine
function with frequency 2ω0, as obtained by a more precise treatment using Green functions. (Right panel) Dynamics for two
QEs coupled to the A/B lattices respectively, placed symmetrically around the middle of the bath (∆ = 0) with parameters
N = 10, g = 0.1J, x12 = 3, and δ = 0.3 (d), δ = −0.3 (e). The dashed black line is a cosine with a frequency obtained from
the exact treatment with Green functions.
the frequencies of the transfer exactly, one can use resol-
vent operator techniques, which yields the dashed black
line of Fig. S5(e). In this case, the extended Green func-
tions are given by
G± =
(z − ∆ − Σαβ
z ±
± )(z ± ) − 2g2
.
(S26)
For ∆ = 0, the real poles of G+ around the middle of the
band gap, z±, are the same as those of G− with opposite
sign. The residues are the same in both cases, therefore
C±(t) (cid:39) R+e±iz+t + R−e±iz−t. Since C1,2(t) = [C+(t) ±
C−(t)]/2, the relevant frequencies are ω± = z+ ± z−.
It should be noted, however, that for really small
systems or situations in which the emitters are placed
close to the edges, the results given by these modified
Green functions will not be accurate, as they use the
thermodynamic self-energies Σαβ
± , which are obtained
for infinite systems.
S6. MIDDLE BOUND STATES IN
ONE-DIMENSIONAL BATHS
appears in the middle band-gap when an emitter with
energy ∆ couples to the bath. In particular, this bound
state has the following properties: A) it is chiral, in the
sense that it localizes preferentially in one side of the
emitter; B) when ∆ = 0, the bound state has its energy
in the middle of the gap, EBS = 0, being fully direc-
tional and with no amplitude in the sublattice to which
the QE couples; C) it inherits the topological robustness
to disorder from the bath.
To make evident that the photonic SSH model is the
simplest one-dimensional model where all these proper-
ties are satisfied, and connect it with the topological fea-
tures of the bath, let us consider a general bipartite bath
Hamiltonian defined by:
(cid:18) GA(k) F (k)
F ∗(k) GB(k)
(cid:19)
HB(k) =
.
(S27)
a plethora
of
Depending on the functions GA/B(k), F (k),
relevant
this
Hamiltonian covers
one-
dimensional models with a middle band-gap where an ex-
tra bound-state appears. In Table S6 we review the topo-
logical properties of several of these models, and whether
middle bound states show the features A -- C discussed
above:
The central part of the manuscript analyzes the prop-
erties and consequences of a peculiar bound state which
1. When GA/B(k) = ωa±δω, F (k) = −J, we have the
simple coupled-cavity array model with staggered
(d)(e) Model
Quantized Zak Phase
Coupled cavity array with
staggered energies
SSH
SSH with staggered energies
SSH with next-nearest neighbours
No
Yes
No
Yes
Bulk-Boundary
Correspondence
Not applicable
Yes
Not applicable
No
A
B
C
No
Yes
Yes
Yes
No
Yes
Yes
No
No
Yes
No
Yes*
TABLE S6. Topological properties of several one-dimensional baths, and their corresponding bound state features A -- C (see
text for discussion) when an emitter couples to them.
16
energies. The staggered energies break the symme-
try between the A/B sublattices, opening a middle
band-gap. In this case, an extra bound-state can
be found in the middle of the bands but with none
of the features A -- C.
to go from one band-configuration to the other
without closing the gap, such that the Zak phase is
not quantized anymore. The middle bound states
can be chiral, but they do not get the robustness
to disorder since the model is topologically trivial.
2. Setting
4. Finally, we consider the SSH model adding next-
GA/B(k) = ωa ,
F (k) = −J[(1 + δ) + (1 − δ)e−ik] ,
we recover the SSH model whose topological and
bound state properties were already discussed in
the main text.
3. One can combine the SSH model with staggered
energies, i.e.,
GA/B(k) = ωa ± δω ,
F (k) = −J[(1 + δ) + (1 − δ)e−ik] ,
which still shows a middle band-gap but chiral sym-
metry is broken. The staggered energies allow one
nearest neighbour hoppings, i.e.,
GA/B(k) = ωa − 2J2 cos(2k) ,
F (k) = −J(cid:2)(1 + δ) + (1 − δ)e−ik(cid:3) .
This model does not preserve chiral symmetry, but
it does preserve spatial inversion symmetry. The
later still leads to a quantized Zak phase, but bulk-
boundary correspondence is not guaranteed any
more (the number of edge states is not linked to
the topological invariant) [31]. Even though the
bound states are chiral, they are not fully direc-
tional, and they are only robust to disorder of very
restricted type (one which respects spatial inversion
symmetry).
[1] K. v. Klitzing, G. Dorda, and M. Pepper, Phys. Rev.
Lett. 45, 494 (1980).
[2] X.-G. Wen, Rev. Mod. Phys. 89, 041004 (2017).
[3] A. Y. Kitaev, Physics-Uspekhi 44, 131 (2001).
[4] F. D. M. Haldane and S. Raghu, Phys. Rev. Lett. 100,
013904 (2008).
[5] Z. Wang, Y. Chong, J. D. Joannopoulos, and M. Soljaci´c,
Nature 461, 772 (2009).
[6] N. Malkova, I. Hromada, X. Wang, G. Bryant,
and
Z. Chen, Opt. Lett. 34, 1633 (2009).
[7] X.-D. Chen, D. Zhao, X.-S. Zhu, F.-L. Shi, H. Liu, J.-C.
Lu, M. Chen, and J.-W. Dong, Phys. Rev. A 97, 013831
(2018).
[8] M. C. Rechtsman, J. M. Zeuner, Y. Plotnik, Y. Lumer,
D. Podolsky, F. Dreisow, S. Nolte, M. Segev, and A. Sza-
meit, Nature 496, 196 (2013).
Bandres, J. Ren, M. C. Rechtsman, M. Segev, D. N.
Christodoulides, and M. Khajavikhan, Phys. Rev. Lett.
120, 113901 (2018).
[12] P. St-Jean, V. Goblot, E. Galopin, A. Lemaıtre,
and
T. Ozawa, L. Le Gratiet, I. Sagnes, J. Bloch,
A. Amo, Nature Photonics 11, 651 (2017).
[13] W.-J. Chen, S.-J. Jiang, X.-D. Chen, B. Zhu, L. Zhou,
J.-W. Dong, and C. T. Chan, Nature Communications
5, 5782 (2014).
[14] T. Ozawa, H. M. Price, A. Amo, N. Goldman, M. Hafezi,
L. Lu, M. C. Rechtsman, D. Schuster, J. Simon, O. Zil-
berberg, and I. Carusotto, Rev. Mod. Phys. 91, 015006
(2019).
[15] J. Perczel, J. Borregaard, D. E. Chang, H. Pichler, S. F.
Yelin, P. Zoller, and M. D. Lukin, Phys. Rev. Lett. 119,
023603 (2017).
[9] M. Hafezi, E. A. Demler, M. D. Lukin, and J. M. Taylor,
[16] R. J. Bettles, J. c. v. Min´ar, C. S. Adams, I. Lesanovsky,
Nature Physics 7, 907 (2011).
and B. Olmos, Phys. Rev. A 96, 041603 (2017).
[10] H. Zhao, P. Miao, M. H. Teimourpour, S. Malzard, R. El-
Ganainy, H. Schomerus, and L. Feng, Nature Commu-
nications 9, 981 (2018).
[17] S. Barik, A. Karasahin, C. Flower, T. Cai, H. Miyake,
W. DeGottardi, M. Hafezi, and E. Waks, Science 359,
666 (2018).
[11] M. Parto, S. Wittek, H. Hodaei, G. Harari, M. A.
[18] J. K. Asb´oth, L. Oroszl´any,
and A. P. P´alyi, A
17
Short Course on Topological Insulators: Band Struc-
ture and Edge States in One and Two Dimensions, Lec-
ture Notes in Physics (Springer International Publishing,
2016) Chap. 1.
[19] R. H. Dicke, Phys. Rev. 93, 99 (1954).
[20] S. Ryu, A. P. Schnyder, A. Furusaki, and A. W. Ludwig,
New Journal of Physics 12, 065010 (2010).
88, 333 (1992).
[41] Y. Qi, Q. Yang, N. sen Yu,
and A. Du, Journal of
Physics: Condensed Matter 28, 126006 (2016).
[42] A. Asenjo-Garcia, M. Moreno-Cardoner, A. Albrecht,
H. J. Kimble, and D. E. Chang, Phys. Rev. X 7, 031024
(2017).
[43] A. Gonz´alez-Tudela, V. Paulisch, H. J. Kimble, and J. I.
[21] S. Ryu and Y. Hatsugai, Phys. Rev. Lett. 89, 077002
Cirac, Phys. Rev. Lett. 118, 213601 (2017).
(2002).
[44] L. Zhou, Z. R. Gong, Y.-x. Liu, C. P. Sun, and F. Nori,
[22] G. W. Gardiner and P. Zoller, Quantum Noise, 2nd ed.
Phys. Rev. Lett. 101, 100501 (2008).
(Springer-Verlag, Berlin, 2000).
[45] D. Witthaut and A. S. Sørensen, New Journal of Physics
[23] C. Cohen-Tannoudji, J. Dupont-Roc, G. Grynberg, and
P. Thickstun, Atom-photon interactions: basic processes
and applications (Wiley Online Library, 1992).
[24] F. Ciccarello, Phys. Rev. A 83, 043802 (2011).
[25] S. John and T. Quang, Physical Review A 50, 1764
(1994).
[26] V. P. Bykov, Soviet Journal of Quantum Electronics 4,
861 (1975).
[27] S. John and J. Wang, Phys. Rev. Lett. 64, 2418 (1990).
[28] G. Kurizki, Phys. Rev. A 42, 2915 (1990).
[29] G. Calaj´o, F. Ciccarello, D. Chang, and P. Rabl, Phys.
12, 043052 (2010).
[46] P. Lodahl, S. Mahmoodian, and S. Stobbe, Rev. Mod.
Phys. 87, 347 (2015).
[47] D. E. Chang, J. S. Douglas, A. Gonz´alez-Tudela, C.-L.
Hung, and H. J. Kimble, Rev. Mod. Phys. 90, 031002
(2018).
[48] Y. Liu and A. A. Houck, Nature Physics 13, 48 (2017).
[49] M. Mirhosseini, E. Kim, V. S. Ferreira, M. Kalaee,
A. Sipahigil, A. J. Keller, and O. Painter, Nature com-
munications 9 (2018), 10.1038/s41467-018-06142-z.
[50] T. Goren, K. Plekhanov, F. Appas, and K. Le Hur, Phys.
Rev. A 93, 033833 (2016).
Rev. B 97, 041106 (2018).
[30] T. Shi, Y.-H. Wu, A. Gonz´alez-Tudela, and J. I. Cirac,
[51] I. de Vega, D. Porras, and J. Ignacio Cirac, Phys. Rev.
Phys. Rev. X 6, 021027 (2016).
Lett. 101, 260404 (2008).
[31] B. P´erez-Gonz´alez, M. Bello, A. G´omez-Le´on,
and
[52] L. Krinner, M. Stewart, A. Pazmino, J. Kwon,
and
G. Platero, Phys. Rev. B 99, 035146 (2019).
D. Schneble, Nature 559, 589 (2018).
[32] J. S. Douglas, H. Habibian, C.-L. Hung, A. Gorshkov,
H. J. Kimble, and D. E. Chang, Nature Photonics 9,
326 (2015).
[33] A. Gonz´alez-Tudela, C.-L. Hung, D. E. Chang, J. I.
Cirac, and H. Kimble, Nature Photonics 9, 320 (2015).
[34] P. Hauke, F. M. Cucchietti, A. Muller-Hermes, M.-C.
Banuls, J. I. Cirac, and M. Lewenstein, New Journal of
Physics 12, 113037 (2010).
[35] P. Richerme, Z.-X. Gong, A. Lee, C. Senko, J. Smith,
and
M. Foss-Feig, S. Michalakis, A. V. Gorshkov,
C. Monroe, Nature 511, 198 (2014).
[36] S. Katsura, Phys. Rev. 127, 1508 (1962).
[37] A. Auerbach, Interacting electrons and quantum mag-
[53] M. Atala, M. Aidelsburger, J. T. Barreiro, D. Abanin,
T. Kitagawa, E. Demler, and I. Bloch, Nature Physics
9, 795 (2013).
[54] W. Tan, Y. Sun, H. Chen, and S.-Q. Shen, Scientific
Reports 4, 3842 (2014).
[55] S. Kruk, A. Slobozhanyuk, D. Denkova, A. Poddubny,
and
I. Kravchenko, A. Miroshnichenko, D. Neshev,
Y. Kivshar, Small 13, 1603190 (2017).
[56] S. R. Pocock, X. Xiao, P. A. Huidobro, and V. Giannini,
ACS Photonics 5, 2271 (2018).
[57] S. Mittal, V. V. Orre, and M. Hafezi, Optics Express
24, 15631 (2016).
[58] M. C. Rechtsman, Y. Lumer, Y. Plotnik, A. Perez-Leija,
netism (Springer Science & Business Media, 2012).
A. Szameit, and M. Segev, Optica 3, 925 (2016).
[38] T. Morita and T. Horiguchi, Physics Letters A 38, 223
(1972).
[59] F. D. M. Haldane, Phys. Rev. Lett. 61, 2015 (1988).
[60] N. P. Armitage, E. J. Mele, and A. Vishwanath, Rev.
[39] P. Sen and B. K. Chakrabarti, Phys. Rev. B 40, 760
Mod. Phys. 90, 015001 (2018).
(1989).
[40] P. Sen, S. Chakraborty, S. Dasgupta,
and B. K.
Chakrabarti, Zeitschrift fur Physik B Condensed Matter
[61] H. Nakazato, M. Namiki, and S. Pascazio, International
Journal of Modern Physics B 10, 247 (1996).
[62] A. Gonz´alez-Tudela and J. I. Cirac, Phys. Rev. A 96,
043811 (2017).
|
1309.6983 | 1 | 1309 | 2013-09-26T17:29:48 | Phase diagrams of magnetopolariton gases | [
"cond-mat.mes-hall"
] | The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focused on studies of polariton lasers, where non-equilibrium Bose-Einstein condensates of bosonic quasiparticles, exciton-polaritons, may appear or disappear under an effect of applied magnetic fields. Polariton lasers based on pillar or planar microcavities were excited both optically and electrically. In all cases a pronounced dependence of the onset to lasing on the magnetic field has been observed. For the sake of comparison, photon lasing (lasing by an electron-hole plasma) in the presence of a magnetic field has been studied on the same samples as polariton lasing. The threshold to photon lasing is essentially governed by the excitonic Mott transition which appears to be sensitive to magnetic fields too. All the observed experimental features are qualitatively described within a uniform model based on coupled diffusion equations for electrons, holes and excitons and the Gross-Pitaevskii equation for exciton-polariton condensates. Our research sheds more light on the physics of non-equilibrium Bose-Einstein condensates and the results manifest high potentiality of polariton lasers for spin-based quantum logic applications. | cond-mat.mes-hall | cond-mat |
1
Phase
Diagrams
of
Magnetopolariton
Gases
Vladimir
P.
Kochereshko1,2,
Mikhail
V.
Durnev1,2,
Lucien
Besombes3,
Henri
Mariette3,
Victor
F.
Sapega1,2,
Alexis
Axitopoulos4,
Ivan
G.
Savenko9,10,
Timothy
C.H.
Liew5,
Ivan
A.
Shelykh5,
Alexey
V.
Platonov1,2,
Simeon
I.
Tsintzos7,
Z.
Hatzopoulos7,
Pavlos
Lagoudakis4,
Pavlos
G.
Savvidis6,7,
Christian
Schneider8,
Matthias
Amthor8,
Christian
Metzger8
,
Martin
Kamp8,
Sven
Hoefling8,
Alexey
Kavokin1,3
1
Spin
Optics
Laboratory,
Saint--‐Petersburg
State
University,
1,
Ulianovskaya,
198504,
St--‐Petersburg,
Russia
2
Ioffe
Physical--‐Technical
Institute,
Russian
Academy
of
Sciences,
26,
Politechnicheskaya,
194021,
St--‐Petersburg,
Russia
3
Institut
Néel,
CNRS/UJF
25,
avenue
des
Martyrs
--‐
BP
166,
Fr--‐38042
Grenoble
Cedex
9,
France
4
Physics
and
Astronomy
School,
University
of
Southampton,
Highfield,
Southampton,
SO171BJ,
UK
5
Division
of
Physics
and
Applied
Physics,
Nanyang
Technological
University
637371,
Singapore
6
Department
of
Materials
Science
&
Technology,
University
of
Crete,
Greece
7
IESL--‐FORTH,
P.O.
Box
1527,
71110
Heraklion,
Crete,
Greece
8
Technische
Physik
and
Wilhelm--‐Conrad--‐Röntgen--‐Research
Center
for
Complex
Material
Systems,
Universität
Würzburg,
D--‐97074
Würzburg,
Am
Hubland,
Germany.
9
Science
Institute,
University
of
Iceland,
Dunhagi--‐3,
IS--‐107,
Reykjavik,
Iceland
10
Department
of
Applied
Physics/COMP,
Aalto
University,
PO
Box
14100,
00076
Aalto,
Finland
The
magnetic
field
effect
on
phase
transitions
in
electrically
neutral
bosonic
systems
is
much
less
studied
than
those
in
fermionic
systems,
such
as
superconducting
or
ferromagnetic
phase
transitions1,2.
Nevertheless,
composite
bosons
are
strongly
sensitive
to
magnetic
fields:
both
their
internal
structure
and
motion
as
whole
particles
may
be
affected3.
A
joint
effort
of
ten
laboratories
has
been
focused
on
studies
of
polariton
lasers4,
where
non--‐equilibrium
Bose--‐Einstein
condensates
of
bosonic
quasiparticles,
exciton--‐polaritons,
may
appear
or
disappear
under
an
effect
of
applied
magnetic
fields.
Polariton
lasers
based
on
pillar
or
planar
microcavities
were
excited
both
optically
and
electrically.
In
all
cases
a
pronounced
dependence
of
the
onset
to
lasing
on
the
magnetic
field
has
been
observed.
For
the
sake
of
comparison,
photon
lasing
(lasing
by
an
electron--‐hole
plasma)
in
the
presence
of
a
magnetic
field
has
been
studied
on
the
same
samples
as
polariton
lasing.
The
threshold
to
photon
lasing
is
essentially
governed
by
the
excitonic
Mott
transition5
which
appears
to
be
sensitive
to
magnetic
fields
too.
All
the
observed
experimental
features
are
qualitatively
described
within
a
uniform
model
based
on
coupled
diffusion
equations
for
electrons,
holes
and
excitons
and
the
Gross--‐Pitaevskii
equation
for
exciton--‐polariton
condensates.
Our
research
sheds
more
light
on
the
physics
of
non--‐equilibrium
Bose--‐Einstein
condensates
and
the
results
manifest
high
potentiality
of
polariton
lasers
for
spin--‐based
quantum
logic6
applications.
2
Mixed
light--‐matter
quasiparticles
in
the
form
of
exciton--‐polaritons7
demonstrate
remarkable
collective
properties
including
polariton
lasing8,
Josephson
oscillations9,
vortices10,
solitons11,
optical
spin
Hall12
and,
possibly,
spin
Meissner13
effects.
Clearly,
microcavities
present
a
laboratory
rich
in
complex
many--‐body
processes.
Electrons,
holes,
excitons
and
exciton--‐polaritons
coexist
and
interact
giving
rise
to
new
phases
or
pseudo--‐phases14.
Magnetic
field
appears
to
be
an
efficient
tool
of
switching
between
some
of
these
phases.
Here
we
present
the
first
detailed
study
of
the
magnetic
field
effect
on
the
(out
of
equilibrium)
phase
transitions
in
microcavities.
So
far,
polariton
lasers
are
the
only
existing
example
of
bosonic
lasers,
where
coherent
light
is
emitted
spontaneously
by
a
bosonic
condensate15.
In
the
meanwhile,
magnetic
field
has
been
recently
shown
to
be
instrumental
for
the
achievement
of
polariton
lasing
in
electrically
pumped
microcavities16,17.
Besides,
it
affects
the
second
phase
transition
towards
a
photonic
laser,
which
takes
place
when
stimulated
emission
of
light
from
electron--‐hole
plasma
starts.
The
switch
from
polariton
to
photon
lasing18
is
associated
with
the
exciton
Mott
transition19:
the
phase
transition
between
a
bosonic
gas
(exciton--‐polariton
gas)
and
neutral
plasma
(electron--‐hole
plasma).
Previous
experimental
studies
evidenced
a
Mott
transition
in
semiconductor
quantum
wells
manifested
by
sharp
changes
of
the
photoluminescence
(PL)
energy
and
linewidth20,21.
This
paper
summarises
a
coordinated
effort
of
ten
laboratories
aimed
at
understanding
magnetic
field
induced
transitions
to
bosonic
lasing
(polariton
lasing)
and
fermionic
lasing
(photon
lasing).
A
variety
of
state
of
the
art
structures
coming
from
two
molecular
beam
epitaxy
facilities,
including
both
planar
and
pillar
microcavities
with
optical
and
electrical
injection,
have
been
studied
by
means
of
polarisation
resolved
magneto--‐photoluminescence
under
continuous
wave
(cw)
and
pulsed
excitations.
Figure
1(a--‐e)
shows
the
photoluminescence
spectra
of
a
round
pillar
microcavity
with
embedded
GaAs/AlGaAs
quantum
wells
taken
at
different
pumping
power
in
the
presence
of
the
external
magnetic
field
applied
along
the
axis
of
the
structure
(the
Faraday
geometry).
Details
of
the
sample
structure
appear
in
the
Methods
section.
The
structure
has
been
excited
through
a
micro--‐objective
by
short--‐duration
light
pulses
focused
to
a
spot
with
1.5
µm
diameter
and
having
a
high
energy
compared
to
the
exciton
transition
and
the
cavity
mode
energies.
These
pulses
create
electron--‐hole
pairs,
which
cool
down
and
form
excitons.
The
latter
relax
further
down
in
energy,
and
eventually
form
a
condensate
of
exciton
polaritons,
in
the
polariton
lasing
regime.
At
low
pumping
intensities
(Figure
1(a))
and
relatively
high
magnetic
fields
(over
7
T)
we
observe
a
narrow
and
intense
polariton
lasing
mode
showing
a
characteristic
diamagnetic
shift22.
The
diamagnetic
shift
is
a
signature
of
the
exciton--‐polariton
state:
the
exciton
energy
enhances
proportionally
to
B2.
Increasing
the
pumping
strength
or
lowering
the
field
results
in
dramatic
modifications
of
the
spectra
(presented
in
Figure
1(b)):
the
exciton--‐polariton
mode
abruptly
disappears,
while
a
strong
laser
line
at
a
higher
energy
emerges.
This
line
is
clearly
pinned
to
the
cavity
photon
mode
whose
energy
is
not
affected
by
magnetic
fields.
The
sharp
transition
from
the
polariton
to
photon
lasing
regime
is
a
manifestation
of
the
abrupt
excitonic
Mott
transition
in
our
system.
Interestingly
enough,
this
photon
laser
emission
line
disappears
again
at
very
weak
magnetic
fields
at
the
intermediate
pumping
power
(Figure
1(c,d)).
Figure
2(a)
shows
how
the
spectra
of
this
pillar
change
when
modifying
the
pump
power
at
a
fixed
magnetic
field
B=6
T.
One
can
clearly
distinguish
the
polariton
and
photon
lasing
regimes.
The
thresholds
are
identified
from
the
peak
intensity
dependencies
on
the
pumping
power
for
the
lower
polariton
(LP)
and
cavity
(C)
photon
modes
(Figure
2(b)).
This
analysis
has
been
done
for
the
full
range
of
available
pumping
and
magnetic
field
strengths
which
allowed
the
obtaining
of
a
phase
diagram
shown
in
Figure
2(c).
One
can
see
that
the
threshold
to
polariton
lasing
decreases
with
the
magnetic
field
3
increase.
This
tendency
is
confirmed
by
experiments
done
on
the
pillar
samples
of
different
diameters
(see
the
Supplementary
information).
In
contrast,
the
behaviour
of
the
threshold
to
photon
lasing
is
strongly
non--‐monotonic:
initially
it
sharply
decreases,
and
then
increases
(Figure
2(c)).
The
switching
between
exciton--‐polariton
gas
and
electron--‐hole
plasma
has
all
the
features
of
a
first
order
phase
transition,
if
this
term
can
be
applied
to
a
non--‐equilibrium
optically
driven
system.
We
interpret
the
experimental
observations
both
for
pillar
and
planar
geometries
by
an
interplay
of
the
exciton
Bohr
radius
shrinkage
in
the
presence
of
the
magnetic
field
and
field--‐controlled
diffusion
of
electrons,
holes
and
excitons
away
from
the
excitation
spot.
The
magnetic
field
and
phase
space
filling
both
bring
the
exciton
transition
into
resonance
with
the
cavity
mode,
which
switches
on
the
photon
lasing
effect
and
fully
suppresses
exciton--‐polaritons
in
the
system
in
the
course
of
an
avalanche
Mott
transition.
Our
model
accounts
for
the
diffusion
of
electrons
and
holes
away
from
the
excitation
spot,
formation
of
the
exciton
reservoir
from
the
electron--‐hole
gas
and
formation
of
the
polariton
condensate
once
the
density
of
excitons
in
the
reservoir
achieves
a
critical
value
(see
the
scheme
in
Figure
3(b)).
The
details
of
the
model
are
summarised
in
the
Supplementary
information.
The
results
of
calculation
are
shown
by
dashed
lines
in
the
phase
diagram
(Figure
2(c)).
The
decrease
of
the
polariton
laser
threshold
with
increase
of
magnetic
field
is
due
to
the
suppression
of
in--‐plane
diffusion
of
electrons
and
holes
away
from
the
excitation
spot,
because
the
magnetic
field
results
in
an
orbital
movement
of
the
carriers.
This
diffusion
leads
to
the
dilution
of
the
concentration
of
electrons,
holes
and
excitons
at
zero
field.
In
the
presence
of
magnetic
field
normal
to
the
quantum
well
planes,
electrons
and
holes
cannot
spread
further
away
from
the
excitation
area
than
by
distances
comparable
with
their
cyclotron
orbit.
The
suppression
of
in--‐plane
diffusion
of
carriers
has
also
an
important
impact
on
the
excitonic
Mott
transition,
which
is
governed
by
the
condition23
𝜅𝑛!𝑎!!=1 where
nx
is
the
in--‐plane
concentration
of
excitons,
aB
is
the
exciton
Bohr
radius,
and
κ
is
a
coefficient
depending
on
the
geometry
of
the
structure.
The
increase
of
nx
under
the
pumping
spot
because
of
the
magnetic
field
effect
leads
to
the
decrease
of
the
threshold
power
for
photon
lasing
at
low
magnetic
fields
seen
in
Figure
1(c).
At
high
fields,
due
to
the
shrinkage
of
the
exciton
Bohr
radius,
the
critical
pumping
power
increases
again.
In
order
to
check
the
validity
of
the
model
and
the
universality
of
the
observed
effects,
we
have
studied
magneto--‐photoluminescence
spectra
of
a
series
of
planar
microcavity
samples
(see
Methods).
The
results
of
these
studies
are
summarised
in
Figure
3.
The
samples
are
pumped
non--‐resonantly
by
a
cw
laser
light.
The
threshold
to
polariton
lasing
has
been
observed
very
clearly.
It
appeared
to
be
strongly
sensitive
to
the
magnetic
field
(Figure
3(a))
but
also
to
the
size
of
the
excitation
spot,
as
the
phase
diagrams
in
the
lower
panels
of
Figure
3
show.
In
the
case
of
a
small
(10
µm)
spot,
the
threshold
non--‐monotonically
depends
on
the
field.
For
larger
spots,
the
initial
decrease
disappears,
and
the
threshold
demonstrates
a
steady
and
monotonic
increase
with
the
increase
of
the
magnetic
field.
This
behaviour
is
consistent
with
our
kinetic
model
(see
the
scheme
in
Figure
3(b)).
The
monotonic
decrease
of
the
threshold
to
polariton
lasing
in
pillar
samples
is
replaced
by
a
non--‐monotonic
behaviour
in
planar
samples
and
returns
to
a
monotonic
behaviour
as
we
increase
the
excitation
spot
size
(see
Figure
3(d--‐f)).
At
zero
field,
the
exciton
concentration
at
the
center
of
the
excitation
spot
appears
to
be
strongly
diluted
due
to
the
diffusion
of
carriers
if
the
pump
spot
is
narrow
(Figure
3(c)
and
Supplementary
Figure
4
S2).
On
the
other
hand,
for
large
spots,
the
diffusion
has
little
effect
on
the
exciton
concentration,
which
is
why
the
suppression
of
diffusion
by
a
magnetic
field
does
not
so
notably
affect
the
threshold
of
polariton
lasing.
The
increase
of
the
threshold
with
a
magnetic
field
observed
for
all
spot
sizes
is
due
to
the
shrinkage
of
the
exciton
Bohr
radius
which
leads
to
the
reduction
of
the
exciton
radiative
life--‐time
and,
consequently,
emptying
of
the
exciton
reservoir.
Polariton
lasers
with
electrical
injection
strongly
differ
from
the
lasers
with
optical
pumping
from
the
point
of
view
of
the
dynamics
of
formation
of
polariton
condensates.
Indeed,
in
our
samples,
electron
and
hole
injection
is
nearly
homogeneous
over
the
whole
area
of
the
sample,
which
is
why
the
diffusion
effects
play
little
or
negligible
role.
On
the
other
hand,
the
lifetime
of
excitons
in
the
structure
is
shortened
in
the
presence
of
the
magnetic
field24
which
leads
to
the
increase
of
the
threshold
for
polariton
lasing.
Besides,
the
shrinkage
of
the
exciton
Bohr
radius
is
also
responsible
for
the
increase
of
the
threshold
to
photon
lasing
associated
with
the
Mott
transition.
This
tendency
is
experimentally
confirmed
for
the
polariton
lasing
(Figure
4(a)).
Figure
4(b)
shows
the
thresholds
to
polariton
and
photon
lasing
at
B=5
T
as
functions
of
temperature.
Both
thresholds
decrease
in
full
agreement
with
the
theory,
which
accounts
for
acceleration
of
the
acoustic
phonon
relaxation
processes
leading
to
electron
and
hole
relaxation
to
the
exciton
reservoir
and
exciton
relaxation
to
the
polariton
condensate.
To
summarize,
we
observed
magnetic--‐field
controlled
transitions
to
polariton
and
photon
lasing,
which
can
be
considered
as
out
of
equilibrium
Bose--‐Einstein
condensation
and
Mott
phase
transitions.
Magnetic
field
effects
on
composite
bosons
are
of
key
importance
for
realisation
of
quantum
logic
devices
based
on
spin
properties
of
bosonic
liquids25,
in
particular,
magnetic
control
of
the
Bose--‐Einstein
condensation
of
exciton
polaritons
may
be
used
in
quantum
and
classical
optical
memories.
Acknowledgments
We
thank
Jacqueline
Bloch
for
many
helpful
discussions.
V.K.,
M.D.,
V.F.S.
and
A.K.
acknowledge
support
from
the
Russian
Ministry
of
Science
and
Education,
contract
(contract
No.
11.G34.31.0067).
P.G.S.
acknowledges
support
from
Greek
GSRT
program
Aristeia
(grant
No.
1978).
C.S.,
M.
A.
J.F.,
M.K
and
S.H.
acknowledge
support
from
the
state
of
Bavaria.
Methods
Summary
Sample
design
and
fabrication.
All
structures
have
been
grown
by
molecular
beam
epitaxy.
The
planar
sample
is
a
high--‐finesse
Q>16000
mircocavity
formed
by
5/2
λ
Al0.3Ga0.7As
cavity
surrounded
by
32
(35)
period
AlAs/Al0.15Ga0.85As
top
(bottom)
DBR
mirrors.
Four
sets
of
three
10nm
GaAs
quantum
wells
are
embedded
inside
the
cavity
at
the
antinodes
of
the
electric
field
producing
a
Rabi
splitting
of
ΩR=
9.2
meV.
For
the
micropillars
studies,
reactive
ion
etching
has
been
applied
to
sculpt
circular
mesas
with
diameter
ranging
from
1
to
40
μm.
The
data
shown
in
Figures
1,2
are
taken
at
the
positive
exciton--‐photon
detuning
of
about
2
meV.
The
data
in
Figure
3
are
taken
at
the
negative
detuning
of
7
meV.
The
sample
for
a
polariton
laser
with
electrical
injection
is
the
same
as
in
Ref.
16.
Experimental
set--‐up.
The
optically
excited
spectra
were
pumped
by
a
Ti:Sa
laser
with
pulse
duration
of
2
picoseconds
and
energy
1.62
eV,
which
corresponds
to
a
range
of
transparency
in
the
Bragg
mirrors.
Time
integrated
micro
PL
spectra
of
the
pillar
samples
were
recorded
by
a
CCD
detector
in
magnetic
fields
up
to
11
T
in
the
Faraday
geometry
with
spatial
resolution
of
about
1
µm.
The
planar
microcavities
were
mounted
in
a
gas
flow
sample
chamber
kept
at
T
=
3
K
of
superconducting
cryostat
operating
in
5
magnetic
fields
up
to
5
T.
The
PL
signal
was
integrated
in
a
solid
angle
determined
by
numerical
aperture
(NA)
of
the
collimating
lens
(NA
=
0.5
for
10
μm
spot
and
NA
=
0.08
for
100
μm
spot).
All
PL
experiments
were
performed
in
back
scattering
geometry
and
at
about
normal
incidence
of
the
light
on
the
sample
surface.
Figures
Fig.
1.
Magneto
photoluminescence
of
the
5m
diameter
micropillar
sample.
Panels
represent
different
pumping
powers:
0.09
mW
(a),
0.58
mW
(b),
0.85
mW
(c),
1
mW
(d)
and
1.5
mW
(e).
Both
polariton
lasing
(a)
and
a
very
sharp
transition
to
photon
lasing
(c--‐e)
are
observed.
Fig.
2.
Phase
transitions
in
micropillar
samples.
a,
b,
Emission
pattern
and
the
integrated
PL
intensity
of
the
5
µm
pillar
at
B
=
6
T.
The
arrows
indicate
the
onset
and
offset
of
the
polariton
laser
(LP1
and
LP2)
and
the
onset
of
the
photon
laser
(C).
c,
Phase
diagram
of
a
5
µm
pillar.
Note
that
the
polariton
lasing
transition
at
zero
field
corresponds
to
a
pump
power
intermediate
between
those
considered
in
Figure
1(a,b).
The
lines
show
the
results
of
simulation
(see
Supplementary
information).
The
part
with
horizontal
white
bands
marks
the
polariton
gas
regime,
beyond
the
offset
of
polariton
lasing.
µ 6
Fig.
3.
Magneto--‐polariton
lasing
of
the
planar
microcavity
sample.
a,
Integrated
PL
intensity
as
a
function
of
pump
power
at
different
magnetic
fields.
The
laser
is
focused
to
a
10
µm
spot.
A
clear
threshold
to
polariton
lasing
is
observed
in
the
whole
range
of
magnetic
fields.
b,
The
scheme
of
polariton
formation
under
non--‐resonant
pumping.
c,
Theoretical
curves
for
the
exciton
density
at
the
center
of
the
excitation
spot
for
a
small
spot
(d
=
10
µm,
red
curve)
and
a
large
spot
(d
=
100
µm,
black
curve).
The
dramatic
difference
in
their
behaviours
reflects
the
crucial
role
of
diffusion
suppression
by
magnetic
field
in
the
case
of
small
spots.
d--‐f,
Phae
diagrams
of
polariton
emission
for
three
different
excitation
spot
sizes
(d
=
10,
40
and
100
µm).
Red
squares
represent
the
experimental
data,
and
the
results
of
modeling
are
shown
by
dashed
curves.
7
Fig.
4.
Phase
diagrams
of
the
electrically
pumped
polariton
laser.
a,b,
Magnetic
and
temperature
dependent
phase
diagrams.
Dashed
lines
show
the
results
of
our
kinetic
modelling.
c,
Linewidth
of
the
PL
emission
as
a
function
of
injection
current.
Dashed
lines
indicate
the
onset
of
the
polariton
and
photon
lasing.
8
1
Giamarchi,
Th.,
Rüegg,
C.
&
Tchernyshyov,
O.
Bose--‐Einstein
condensation
in
magnetic
insulators.
Nature
Physics
4,
198
--‐
204
(2008).
2
Moskalenko,
S.A.,
Liberman,
M.A.
and
Dumanov,
E.V.
Exciton
condensation
under
high
magnetic
field.
Journal
of
Nanoelectronics
and
Optoelectronics
6,
1--‐27
(2011).
3
Gor'kov,
L.P.,
Dzyaloshinskii,
I.E.
Contribution
to
the
Theory
of
the
Mott
Exciton
in
a
Strong
Magnetic
Field.
Sov.
Phys.
JETP
26
(2),
449--‐451
(1968)
[ZhETF
53
(2),
717--‐722
(1967)].
4
Ĭmamoğlu,
A.,
Ram,
R.J.,
Pau,
S.
&
Yamamoto,
Y.
Nonequilibrium
condensates
and
lasers
without
inversion:
exciton--‐polariton
lasers.
Phys.
Rev.
A
53,
4250 -- 4253
(1996).
5
Timofeev,
V.B.,
Larionov,
A.V.,
Grassi--‐Alessi,
M.,
Capizzi,
M.,
and
Hvam,
J.M.
Phase
diagram
of
a
two--‐dimensional
liquid
in
GaAs/AlxGa1--‐xAs
biased
double
quantum
wells.
Phys.
Rev.
B
61,
8420--‐8426
(2000).
6
Paraïso,
T.K.,
Wouters,
M.,
Léger,
Y.,
Morier--‐Genoud,
F.
and
Deveaud--‐Plédran,
B.
Multistability
of
a
coherent
spin
ensemble
in
a
semiconductor
microcavity.
Nature
Materials 9,
655
(2010). 7
Hopfield,
J.
J.
Theory
of
the
contribution
of
excitons
to
the
complex
dielectric
constant
of
crystals.
Phys.
Rev.
112,
1555
(1958).
8
Christopoulos,
S.,
von
Hoegersthal
G.
Baldassarri
Hoeger,
Grundy,
A.
J.
D.,
Lagoudakis,
P.
G.,
Kavokin,
A.
V.,
Baumberg,
J.
J.,
Christmann,
G.,
Buttè,
R.,
Feltin,
E.,
Carlin,
J.--‐F.
and
Grandjean,
N.
Room--‐temperature
polariton
lasing
in
semiconductor
microcavities.
Phys.
Rev.
Lett.
98,
126405
(2007).
9
Lagoudakis,
K.
G.,
Pietka,
B.,
Wouters,
M.,
André,
R.,
and
Deveaud--‐Plédran,
B.
Coherent
Oscillations
in
an
Exciton--‐Polariton
Josephson
Junction.
Phys.
Rev.
Lett.
105,
120403
(2010).
10
Lagoudakis,
K.
G.,
Ostatnický,
T.,
Kavokin,
A.
V.,
Rubo,
Y.
G.,
André,
R.,
Deveaud--‐Plédran,
B.
Observation
of
Half--‐Quantum
Vortices
in
an
Exciton--‐Polariton
Condensate.
Science
326,
974
(2009).
11
Amo
A.
et
al,
Polariton
Superfluids
Reveal
Quantum
Hydrodynamic
Solitons,
Science,
332,
1167--‐1170
(2010).
12
Leyder,
C.,
Romanelli,
M.,
Karr,
J.
Ph.,
Giacobino,
E.,
Liew,
T.
C.
H.,
Glazov,
M.
M.,
Kavokin,
A.
V.,
Malpuech,
G.
and
Bramati,
A.
Observation
of
the
optical
spin
Hall
effect.
Nature
Physics
3,
628
(2007).
13
Larionov,
A.
V.
et
al.
Polarized
nonequilibrium
Bose--‐Einstein
condensates
of
spinor
exciton
polaritons
in
a
magnetic
field.
Phys.
Rev.
Lett.
105,
256401
(2010).
14
Ogawa
T.,
Exciton
Mott
transition
and
quantum
condensation
in
electron--‐hole
systems,
Phys.
Stat.
Sol.
(c),
6,
28--‐33
(2009).
15
Kavokin,
A.
and
Malpuech,
G.
Polariton
lasers,
in
"Radiation--‐matter
interaction
in
confined
systems"
edited
by
L.C.
Andreani,
G.
Benedek,
E.
Molinari,
Società
Italiana
di
Fisica,
Bologna,
287--‐301
(2002).
16
Schneider,
C.,
Rahimi--‐Iman,
A.,
Kim,
N.
Y.,
Fischer,
J.,
Savenko,
I.
G.,
Amthor,
M.,
Lermer,
M.,
Wolf,
A.,
Worschech,
L.,
Kulakovskii,
V.
D.,
Shelykh,
I.
A.,
Kamp,
M.,
Reitzenstein,
S.,
Forchel,
A.,
Yamamoto,
Y.
and
Hofling,
S.
An
Electrically
Pumped
Polariton
Laser,
Nature
497,
348--‐352
(2013).
17
Bhattacharya
P.,
Xiao
B.,
Das
A.,
Bhowmick
S.,
Heo
J.,
Solid
State
Electrically
Injected
Exciton--‐Polariton
Laser.
Physical
Review
Letters
110,
206403
(2013).
18
Kammann,
E.,
Ohadi,
H.,
Maragkou,
M.,
Kavokin,
A.
V.
&
Lagoudakis,
P.
G.
Crossover
from
photon
to
exciton--‐polariton
lasing.
N.
J.
Phys.
14,
105003
(2012).
19
Mott,
N.F.
Metal
Insulator
Transition,
Taylor
and
Francis,
London,
1990.
20
Kappei,
L.,
Szczytko,
E.,
Morier--‐Genoud,
F.
and
Deveaud,
B.
Direct
Observation
of
the
Mott
Transition
in
an
Optically
Excited
Semiconductor
Quantum
Well.
Phys.
Rev.
Lett.
94,
147403
(2005).
21
Stern,
M.,
Garmider,
V.,
Umansky,
V.,
and
Bar--‐Joseph,
I.
Mott
Transition
of
Excitons
in
Coupled
Quantum
Wells.
Phys.
Rev.
Lett.
100,
256402
(2008).
22
Rahimi--‐Iman,
A.,
Schneider,
C.,
Fischer,
J.,
Holzinger,
S.,
Amthor,
M.,
Höfling,
S.,
Reitzenstein,
S.,
Worschech,
L.,
Kamp,
M.
and
Forchel,
A.
Zeeman
splitting
and
diamagnetic
shift
of
spatially
confined
quantum--‐well
exciton
polaritons
in
an
external
magnetic
field.
Phys.
Rev.
B
84,
165325
(2011).
23
Nikolaev,
V.V
and
Portnoi,
M.E.
Theory
of
excitonic
Mott
transition
in
quasi--‐two--‐dimensional
systems,
Superlattices
and
Microstructures
43
(5--‐6),
460--‐464
(2008).
24
Berger
J.D.,
Lyngnes
O.,
Gibbs
H.M.,
Khitrova
G.,
Nelson
T.R.,
Lindmark
E.K.,
Kavokin
A.V.,
Kaliteevski
M.A.,
and
Zapasskii
V.V.,
Magnetic
Field
Enhancement
of
the
Exciton--‐Polariton
Splitting
in
a
9
Semiconductor
Quantum
Well
Microcavity:
The
Strong
Coupling
Threshold,
Phys.
Rev.
B
54,
1975--‐1981
(1996).
25
Liew,
T.
C.
H.,
Kavokin,
A.
V.,
and
Shelykh,
I.
A.
Optical
circuits
based
on
polariton
neurons
in
semiconductor
microcavities.
Phys.
Rev.
Lett.
101,
016402
(2008).
SUPPLEMENTARYMATERIALBasicequationsThecoherentpolaritonstatewithinourmodelisformedduringthethree-stageprocessillustratedschematicallyinFig.3bofthemaintext.Thefirststageisthenonresonantpumpingofelectronsandholeswithlargevaluesofwavevectors;thesecondstageistheenergyrelaxationofchargedcarriersfollowedbytheformationofanexcitonreservoir,andthefinalstageistheformationofpolaritonsfollowedbyitsresonantscatteringtothegroundstate.Thefirsttwoprocessescanbedescribedbythefollowingsetofdynamicaldiffusionequations:∂∂tne=De∆ne−wnenh+Je;∂∂tnh=Dh∆nh−wnenh+Jh;∂∂tnx=Dx∆nx+wnenh−nxτx.(1)Herene,nhandnxarethedensitiesofelectrons,holesandexcitons,respectively;Diarethediffusioncoefficients,wdescribestheexcitonformationrate;JeandJharethepumpratesforelectronsandholesandτxistheexcitonlifetime.Theformationofexcitonsinourmodelisdescribedbythetermwnenhcorrespondingtothenon-geminate(orbimolecular)mechanismbecausethecontributionfromthegeminatemechanismistypicallysmall[1,2].Sinceinastrongcouplingregimenon-radiativelossesarenegligible,weassumethatexcitonsdecaymainlyduetoradiativeprocesses,sothatτxcorrespondstotheradiativelifetime.Todescribetheformationofacondensatethethirdequationin(1)shouldbesupplementedwiththescatteringterms:∂nx∂t=Dx∆nx+wnenh−nxτx−Γin(ψ+2+ψ−2)nx.(2)HereΓinisthetransitionratefromthereservoirtothecondensate.Theequationsforthecondensatewavefunctionsψ±read:i∂ψ±∂t+2∇22mψ±=−i2τψ±+(α1ψ±2+α2ψ∓2±∆Z2)ψ±+i2Γinnxψ±.(3)Heremistheeffectivemassofapolaritonatzerowavevector,τisalifetimeofthecondensate,∆ZistheZeemansplittingandα1,2arepolariton-polaritoninteractionconstantsfortheparallelandanti-parallelspinconfigurations.Theequationforthecondensatewavefunctionisbasedonamean-fieldtreatment[3],modifiedforspin[4]andincoherentexcitation[5].Wenotethatinthepresentequationsweneglectthedriftterms,arisingfromthedifferentspatialdistributionofelectronsand holesduetothepossibledifferenceinthediffusioncoefficientsDe,h.Comparisonwithmoreaccuratesimulations(includingthedriftcurrents)showedthesamebehaviorsforthephasediagramswithonlyminorquantitativedifferences,thereforewewillfurtheruseDe=Dh≡Dandomitthepossibilityforelectricalcurrentsinsidethestructure.LowandhighpumpingregimesLetus,first,focusonthesetofequations(1)fortheexcitonreservoirassumingtheonsetofpolaritonlasingatnx=n(th)x,wheren(th)xisacriticalexcitonconcentrationcorrespondingtothepopulationofpolaritongroundstateequaltounity.InthefollowingweassumethattheelectronandholecomponentsarepumpedwithequalratesbytheGaussian-shapedlaserbeamJe=Jh≡Je−r2/R2.Theabsenceofthedriftcurrentsmeansequalconcentrationsforelectronsandholes,ne=nh≡n,satisfyingthefollowingequationinthestationarylimit:D∆n−wn2+J(r)=0.(4)NonlinearEq.(4)canbesolvednumerically,howeverasimplevariationalprocedurewiththecarrierdensitytakenintheformn(r)=n0e−r2/a2givesagoodapproximationpreservingallthephysicalinsight.Moreover,therearetwolimitingcaseswhenEq.(4)allowsforanalyticalsolutions.Thefirstonecorrespondstoalowpumpingregime:inthatcaseonedealswithlowconcentrationsandthenonlinearterminEq.(4)issmall.Theeffectivelifetimeofaparticleisthenτ=1/(wn0),andthespreadofcarrierdensityisa=√Dτ.IntegrationofEq.(4)overspacedomaingives:a=D/(R√wJ).Thiseffectiveradiusobviouslyshouldbegreaterthantheradiusofthepumpspot,R,sothata(cid:29)RandJ(cid:28)J∗=2D2/(wR4).Theexcitonicdensityatr=0isnx(0)=wn20τx(ifonetotallyneglectsthediffusionofexcitons,i.e.setsDx≡0)anditbehavesquadraticallywiththepumpintensity:nlowpumpx(0)∝wR42D2J2τx=J2J∗τx.(5)Intheoppositecaseofahighpumpregime,wecanneglectthediffusionterminEq.(4)resultinginaveryshortlinearinpumpexpressionfortheexcitondensity:nhighpumpx(0)=Jτx.(6)SincethetransitionbetweenthediscussedregimesisdefinedbyJ∗whichisinverselyproportionaltothefourthpowerofR,oneshouldexpectthattheexcitonicdensitydistributiondependenceonthepumppowerwithandwithoutamagneticfieldsignificantlydependsontheexcitationspotradius.ThiseffectisillustratedinFig.S1a,wherenx(0)isplottedfortwospotradiidifferentbyoneorderof magnitude.Onecanseethatforthesharperspot(redcurve)J∗significantlyincreases.Thus,forthefixedexcitondensityweswitchbetweenthehigh-pumpingregime(blackcurve)andthelow-pumpingregime(redcurve).ApplicationofamagneticfieldaltersparametersDandτx.MagneticfieldleadstosuppressionofthediffusionofchargedcarrierswhichcanbedescribedusingtheEinsteinrelationandtheHallexpressionforconductivity:D(B)=kBTµ0/e1+B2/B20,B0=cµ0.(7)Hereµ0=eτp/misthemobilityofelectron/holegasatB=0andTisitstemperature.TheexperimentaldatashowthatTmightbesignificantlyhigherthanthelatticetemperature(e.g.T≈50K).ExcitoniclifetimedecreaseswiththemagneticfieldduetothedecreaseoftheexcitonBohrradius(τx∝a2Bin2Dstructures[6],seeFig.S1b).AreasonabledependenceshouldbetheLorentzian:τx(B)=τ01+B2/B21(8)withB1sufficientlylargerthanB0[7].Itbecomesobviousnow,thatforthetworegimesdiscussedaboveoneshouldexpectcompletelydifferentbehaviorofexcitons'densityinthecenterofthespotasafunctionofmagneticfield.Indeed,inthehighpumpingregime,nx(0)∝τx(B)decreasesmonotonouslyasafunctionofmagneticfield,whileinthelowpumpingregime,nx(0)∝τx(B)/D2(B)which(inthecaseB1>B0)resultsintheenhancementofexcitonformationatr=0.Further,sinceparameterJ∗dependsonthemagneticfieldviathediffusioncoefficient,themagneticfieldactsasaswitchbetweenthetworegimesleadingtoanon-monotonousbehavioroftheexcitons'density.ThisisillustratedinFig.3cinthemaintextoftheLetter.ResultsofcalculationsandparametersetsusedAsithasbeenalreadymentioned,theonsetofpolaritonlasingisdescribedbyaconditionnx=n(th)x,wheren(th)xcanbesetmanually.ThephotonlasingonsetcoincideswiththeMotttransitioninthesystemanditisdescribedbythefollowingcondition[8]:κnxa2B=1,(9)whereκisthecoefficientoftheorderofunity.Inthesimulationswesetκ=1.Usingthosetwoconditions,onecanfindthethresholdpumpintensityasafunctionofmagneticfield.ThisfunctionisplottedinFig.2c,Fig.2dandFig.3d-finthemaintext. Theexperimentalvaluesforwfoundinliteratureare:w=6±2cm2/s[9],w=15cm2/s[1],w≥0.5cm2/s[10].Thetheoreticalcalculations(accountingforrelaxationonopticalandacousticphonons[2])resultinw=0.1÷10cm2/s.Thefollowingsetsofparameterswereemployedtocalculatethephasediagramsshowninthemaintext:1.Fig.2cD0=1000cm2/s,B0=1T,B1=9T,w=1cm2/s,nth=5×1010cm−2,aB(B=0)=13nm;2.Fig.2dD0=1500cm2/s,B0=2.5T,B1=10T,w=0.1cm2/s,nth=5×1010cm−2;3.Fig.3d-fD0=900cm2/s,B0=1T,B1=7T,w=1cm2/s,nth=3×109cm−2.Accountforthecouplingbetweentheexcitonicreservoirandtheexciton-polaritoncondensateToinvestigatetheroleofthemagneticfieldontheformationoftheexciton-polaritoncondensatefromthereservoirofexcitons,weusednumericalanalysisofthecoupledEqs.(1),(2),(3).Theresultsofmodelingofthecondensatereal-spaceprofile,ψ2,arepresentedinFig.S2.Onecanseethat,inagreementwiththecalculationsfortheexcitonicreservoir,amagneticfieldleadstolocalizationofthecondensedensity.Thecalculatedphasediagramsdescribingpolaritonlasingshowthefollowingbehavior:monotonousthresholdincreaseinthecaseofthewidelaserspotandnon-monotonousbehaviorinthecaseofthesharpfocusing.Thus,itisimportanttomention,thatthisaccuratemodelvalidatesthesimplecalculationspresentedabovewhichaccountfortheevolutionoftheexcitoniccomponentonly.EquationsforthelaserwithcurrentinjectionThesituationisquitedifferentifweconsideranelectricallypumpedlaser.Inthiscaseanelectronandaholeareexcitedindifferentspotsofthesample,thusleadingtosmallvaluesoftheparameterw.Wewillassumethatinoursampletheelectricalinjectionishomogeneousalongthequantumwellplanesmeaningthatthediffusionisneglectedinthecaseofcurrentinjection.Ontheotherhand,therearelotsofpossiblemechanismsofelectronandholedecaysnotleadingtotheexcitonformation(includingthe'fly-through'oftheparticles,non-radiativeprocessesatthepillarsurface,etc.),sothatthenon-radiativedecaytimesτeandτhshouldbeintroduced.ThekineticequationssimilartoEq.(1) thereforeread:∂∂tne=−wnenh−neτe+Je;∂∂tnh=−wnenh−nhτh+Jh;∂∂tnx=wnenh−nxτx.(10)Inthestationarylimit,weobtainthealgebraicsystemofequations,thesolutionofwhichreads:ne=−12wτh−12(Jh−Je)τe+s14(cid:20)1wτh+(Jh−Je)τe(cid:21)2+Jeτewτh,(11a)nh=neτhτ2+(Jh−Je)τh.(11b)Wewillfurthermakesomesimplifications,namely:τe=τh≡τandJe=Jh≡J,sothatne=nh≡n.Inarealisticlimitofsmallcarrierlifetimes,Jwτ2<1,thecarrierconcentrationisn=Jτ,andfortheexcitondensityoneobtains:nx=wJ2τ2τx.(12)Wewillassumeausualdependenceofτxonmagneticfield[seeEq.(8)],whichgivesthefollowingexpressionsforthepolaritonandphotonthresholds:J(pol)th(B)=Jth,0s1+B2B21,(13a)J(ph)th(B)=Jth,0pntha2B(0)(cid:18)1+B2B21(cid:19).(13b)HereJth,0=pnth/(wτx(0)τ2)isthepolaritonthresholdatzeromagneticfield.ThecalculatedphasediagramispresentedinFig.4ainthemaintextwithJth,0=85A/cm2,B1=7Tandntha2B(0)=0.65.Thetemperaturedependenceoflasingthresholdsisruledbythestronglytemperature-dependentexcitonformationrate,w.Weassumethattheexcitonformationrateinthelow-temperatureregionincreaseswithtemperature,following:w(T)=w0exp(−T0/T),whereT0issomeeffectivetemperature.ItleadstoadecreaseofthethresholdswhichisillustratedinFig.4bofthemaintext.ThevalueofT0ischosenT0=5K. nx(0) (cm-2)11031061091012J (cm-2/s)101410161018102010221024Diffusion coefficient (cm2/s)02004006008001000Bohr radius aB (nm)78910111213Magnetic field (T)02468101214abFig.S1:Switchbetweenthelinearandnonlinearregimes.a,Excitonicdensityinthecenterofthespotasafunctionofpumpintensity.Redcurvecorrespondstoasharperfocusing,theradiiaredifferentbyoneorderofmagnitude.ThedashedlinesindicatethepositionofJ∗.b,BohrradiusanddiffusioncoefficientdependencesonmagneticfieldasusedincalculationspresentedinFig.2cinthemaintext.B = 0 TB = 3 TFig.S2:Real-spaceprofilesofthecondensatedensityψ(x,y)2.Onecansee,thatapplicationofamagneticfieldleadstoastrongerlocalizationofthecondensate.Theexcitationspotdiameteris1.5µm.Theotherparametersusedare:Γin≈0.005µeV,w=1cm2/s,aB=10nm,τx=100ps,τ=10/(1+B2/B21)ps,B0=1T,B1=7T,D0=1000cm2/s,Dx=100cm2/s. SupplementaryexperimentaldataThissectionsummarizesadditionalexperimentaldatanotpresentedinthemaintextoftheLetter.Letusstartwiththemicropillarsamples.FigureS3presentsthedataonthe8µmdiameterpillarmanifestingtheroleofmagneticfieldonthein-planemotionofthecarriers:duetodiffusionquenchingthecenterregionofthepillarisdepletedwithcarriersathighmagneticfieldswhichresultsinlasingsuppression(indicatedbythearrow).Ontheotherhand,theemissionintensityincreasesmonotonouslywhenthepillarisexcitedatthecenter.Fig.S4presentstheexperimentaldataonthresholdstopolaritonlasingmeasuredfortwomicropillarsampleswithdiameters8and14µm(thedataona5µmsampleispresentedinthemaintext).Bothpillarsclearlyillustratethesuppressionofdiffusionbymagneticfieldandshowthethresholdbehaviorwhichcorrelateswellwiththetheory.Howevertheinitialriseofthethresholdin14µmsampleisstillunclearandneedsfurtherinvestigation.TheadditionaldataontheplanarsamplesissummarizedinFigs.S5andS6.Fig.S5showsPLspectraofthesamplewithaplanarmicrocavityforvaryingpumpintensitiesatafixedmagneticfieldB=5Tandnegativedetuningδ=−7meV.Onecanseethattheonsetofapolaritonlasingisclearlyobservedforbothexcitationspots.WeconjecturethatpronouncedPLpeaksobservedathighenergysideoflowpolaritonicbranchfor10µmspotandabovethresholdpoweroriginatefromthecavitymodescharacterizedbylargek-vectors.Indeed,thelenswithalargerNA(10µmspot)integratesthePLsignalinawiderk-spacethanthatwithasmallerNA(100µmspot).Ouradditionalstudydemonstratesthatthephasediagrams(seeFig.3d-finthemaintext)arealsosensitivetothedetuning.FigureS6showsthephasediagramsobtainedforlarge100µm(upperpanel)andsmall10µm(lowerpanel)spotsmeasuredatoptimalnegativedetuningδ=−7meV(thehighestefficiencyoflasing)andδ=−3.3meV.Onecanseethatdeviationofthedetuningfromtheoptimaltolessnegativevaluessignificantlydecreasestheeffectofmagneticfieldonthresholdforlargespot.Incontrasttheeffectofdetuningvariationforsmallspotisalmostnegligible.FigureS7presentstheInput-outputcharacteristicsandtheemissionlinewidthoftheelectricallypumpedmicrocavitysample.Thepolaritonlaserthresholdismanifestedbysharpincreaseintheintensityat2Tand4TasshowninFig.S7a,whiletheweakcouplinglaserthresholdischaracterizedbyasmoothS-curveathighercurrentvalues.Theonsetofpolaritonlasingisalsoaccompaniedbyasharpdropinthelinewidth(seeFig.S7b). Fig.S3:MagnetoPLpatternsofthe8µmdiametermicropillarsampleintheregimeofpolaritonlaser.Thepillarisexcitedatthecenter(leftpanel)andattheedge(rightpanel),whilethesignalisdetectedfromthecenterinbothcases.Polariton lasingP/Pth(B=0)00.20.40.60.81.01.21.4Magnetic field (T)0246810Polariton lasingMagnetic field (T)0246810Mesa 8μMesa 14μFig.S4:Experimentallyobservedphasediagramsforpolaritonemissionofthemicropillarsamples.Leftpanel,pillardiameteris8µm,rightpanel,pillardiameteris14µm. 153515401545155015550.05.0x1031.0x1041.5x1042.0x1042.5x1043.0x1043.5x104Intensity (arb. units)Photon Energy (meV)100mkmB=5TP=1P=0.067P=0.067 15361538154015421544154615481550155215540.05.0x1031.0x1041.5x1042.0x1042.5x104P=0.067P=0.067P=1B=5TIntensity (arb. units)Photon Energy (meV) 100 mkmB = 5 T10 mkmB = 5 TabFig.S5:PLspectraoftheplanarmicrocavityillustratingtheonsetofapolaritonlasing.a,Excitationspotdiameteris100µm,b,excitationspotdiameteris10µm.
0.91.01.11.21.31.41.51.61.7
δ=--‐3.3meV
δ=--‐7meV100µm
Threshold
Power
(arb.
units)02460.40.60.81.01.2
δ=--‐3.3meV
δ=--‐7meV10 µm
Magnetic
Field
(T)Fig.S6:Polaritonthresholdoftheplanarmicrocavitysample.Thedatafortwodifferentdiametersoftheexcitationspotandtwovaluesofdetuningispresented. (cid:48)(cid:46)(cid:49)(cid:49)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:48)(cid:48)(cid:69)(cid:76)(cid:73)(cid:110)(cid:116)(cid:101)(cid:110)(cid:115)(cid:105)(cid:116)(cid:121)(cid:40)(cid:97)(cid:114)(cid:98)(cid:46)(cid:117)(cid:46)(cid:41)(cid:32)(cid:48)(cid:46)(cid:49)(cid:49)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:48)(cid:48)(cid:49)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:46)(cid:49)(cid:49)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:49)(cid:48)(cid:48)(cid:48)(cid:48)(cid:48)(cid:32)(cid:67)(cid:117)(cid:114)(cid:114)(cid:101)(cid:110)(cid:116)(cid:32)(cid:68)(cid:101)(cid:110)(cid:115)(cid:105)(cid:116)(cid:121)(cid:32)(cid:40)(cid:65)(cid:47)(cid:99)(cid:109)(cid:50)(cid:41)(cid:66)(cid:61)(cid:48)(cid:84)(cid:66)(cid:61)(cid:50)(cid:84)(cid:66)(cid:61)(cid:52)(cid:84)101000.011100100001000000Current Density (A/cm2)EL Intensity (arb.u.)150200250300350400Linewidth (µeV)abFig.S7:Input-outputcharacteristicsandtheemissionlinewidthoftheelectricallydrivenpolaritonlaser.a,Input-outputcharacteristicsatamagneticfieldof0T,2Tand4T.b,Input-outputcharacteristicsandtheemissionlinewidthat2T. [1]D.Robart,X.Marie,B.Baylac,T.Amand,M.Brousseau,G.Bacquet,G.Debart,R.Planel,andJ.M.Gerard,SolidStateCommunications95,287(1995).[2]C.Piermarocchi,F.Tassone,V.Savona,A.Quattropani,andP.Schwendimann,Phys.Rev.B55,1333(1997),URLhttp://link.aps.org/doi/10.1103/PhysRevB.55.1333.[3]I.CarusottoandC.Ciuti,Phys.Rev.Lett.93,166401(2004),URLhttp://link.aps.org/doi/10.1103/PhysRevLett.93.166401.[4]I.A.Shelykh,Y.G.Rubo,G.Malpuech,D.D.Solnyshkov,andA.Kavokin,Phys.Rev.Lett.97,066402(pages4)(2006),URLhttp://link.aps.org/abstract/PRL/v97/e066402.[5]M.WoutersandI.Carusotto,Phys.Rev.Lett.99,140402(2007),URLhttp://link.aps.org/doi/10.1103/PhysRevLett.99.140402.[6]E.L.Ivchenko,Opticalspectroscopyofsemiconductornanostructures(AlphaScience,HarrowUK,2005).[7]S.N.WalckandT.L.Reinecke,Phys.Rev.B57,9088(1998),URLhttp://link.aps.org/doi/10.1103/PhysRevB.57.9088.[8]V.NikolaevandM.Portnoi,SuperlatticesandMicrostructures43,460(2008),ISSN0749-6036,pro-ceedingsofthe7thInternationalConferenceonPhysicsofLight-MatterCouplinginNanostructures,URLhttp://www.sciencedirect.com/science/article/pii/S0749603607002121.[9]R.Strobel,R.Eccleston,J.Kuhl,andK.Kohler,Phys.Rev.B43,12564(1991),URLhttp://link.aps.org/doi/10.1103/PhysRevB.43.12564.[10]R.Kumar,A.S.Vengurlekar,S.S.Prabhu,J.Shah,andL.N.Pfeiffer,Phys.Rev.B54,4891(1996),URLhttp://link.aps.org/doi/10.1103/PhysRevB.54.4891. |
1905.11571 | 1 | 1905 | 2019-05-28T02:13:30 | Sustained biexciton emission in colloidal quantum wells assisted by dopant-host interaction | [
"cond-mat.mes-hall"
] | Biexcitons have been considered as one of the fundamental building blocks for quantum technology because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and scale up capability hinder their applications. Colloidal nanomaterials, with high quantum efficiency and ease of synthesis/processing, are regarded to be an appealing complement to TMDs for biexciton sources. However, a progress towards biexciton emission in colloidal nanomaterials has been challenging largely by small binding energy and ultrafast non-radiative multiexciton recombination. Here, we demonstrate room-temperature biexciton emission in Cu-doped CdSe colloidal quantum wells (CQWs) under continuous-wave excitation with intensity as low as ~10 W/cm2. The characteristics of radiative biexciton states are investigated by their super linear emission with respect to excitation power, thermal stability and transient photophysics. The interaction between the quantum confined host carriers and the dopant ions increases biexciton binding energy by two folds compared to the undoped CQWs. Such strong binding energy together with suppressed Auger recombination and efficient, spectrally narrow photoluminescence in a quasi-2D semiconductor enables sustained biexciton emission at room temperature, providing a potential solution for efficient, scalable and stand-alone quantum devices. | cond-mat.mes-hall | cond-mat | Sustained biexciton emission in colloidal quantum wells assisted
by dopant-host interaction
Junhong Yu+1, Manoj Sharma+1, Mingjie Li+2, Pedro Ludwig Hernández-Martínez1, Savas Delikanli1, Ashma
Sharma1, Yemliha Altintas3, Chathuranga Hettiarachchi5, TzeChien Sum, Hilmi Volkan Demir*1,2,3, Cuong Dang*1,4,5
1LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic
Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
2School of Physical and Mathematical Sciences, Nanyang Technological University, 639798, Singapore
3Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials
Science and Nanotechnology, Bilkent University, Bilkent, Ankara, 06800, Turkey
4CINTRA UMI CNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6,
637553, Singapore
5Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics
Institute, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
+ Junhong Yu, Manoj Sharma and Mingjie Li contribute equally to this work
* Email: volkan@stanfordalumni.org; hcdang@ntu.edu.sg
Abstract: Biexcitons have been considered as one of the fundamental building blocks for quantum technology
because of its overwhelming advantages in generating entangled photon pairs. Although many-body complexes have
been demonstrated recently in mono-layer transition metal dichalcogenides (TMDs), the low emission efficiency and
scale up capability hinder their applications. Colloidal nanomaterials, with high quantum efficiency and ease of
synthesis/processing, are regarded to be an appealing complement to TMDs for biexciton sources. However, a progress
towards biexciton emission in colloidal nanomaterials has been challenging largely by small binding energy and
ultrafast non-radiative multiexciton recombination. Here, we demonstrate room-temperature biexciton emission in
Cu-doped CdSe colloidal quantum wells (CQWs) under continuous-wave excitation with intensity as low as ~10
W/cm2. The characteristics of radiative biexciton states are investigated by their super linear emission with respect to
excitation power, thermal stability and transient photophysics. The interaction between the quantum confined host
carriers and the dopant ions increases biexciton binding energy by two folds compared to the undoped CQWs. Such
strong binding energy
together with suppressed Auger recombination and efficient, spectrally narrow
photoluminescence in a quasi-2D semiconductor enables sustained biexciton emission at room temperature, providing
a potential solution for efficient, scalable and stand-alone quantum devices.
Entangled photon pairs are natural candidates for basic entities ('qubits') in quantum information and quantum
computation1-3. Commonly, parametric down conversion (PDC) in nonlinear optics is utilized to create entangled
photon pairs4. However, PDC mechanism suffers from non-guaranteed single photon pair as well as extremely low
non-linear efficiency5. Utilizing biexciton states in quantum emitters is a promising strategy to circumvent the
limitations since the radiative decay of a biexciton has two channels: either emit a horizontally (H) polarized photon
or a vertically (V) polarized photon1-3,6. If fine-structure splitting (FSS) is negligible, the generated two photons are
7. Benefiting from the
indistinguishable in any other properties except the polarization:
1
2HHVV strong many-body interaction in atomically thin transition metal dichalcogenides (TMDs), the first observation of
biexciton emission at 10 K using femtosecond pulse excitation was achieved 3 years ago8. Since then, lots of
investigations have been conducted to demonstrate continuous-wave pumped biexciton states at room temperature in
TMDs7,9-14. However, the synthesis (i.e. mechanical exfoliation, chemical exfoliation, and chemical vapor deposition)
of high quality TMDs is still suffering from various issues15-17 such as synthesizing cost, upscaling capability (curbed
by flake size and film uniformity), emission efficiency (quantum yield: < 5%) or limited spectral tunability
(constrained by the valley band). The use of colloidal nanomaterials offers an avenue for fully solution-processed,
highly efficient, bottom-up biexciton sources, which in turn enable the easy integration of quantum emitters into a
wide variety of optoelectronic quantum architectures18,19.
Till now, the demonstration of biexciton states in colloidal nanomaterials can only be achieved under intense excitation
with ultrashort pulsed lasers and cryogenic condition due to the two key challenges: very fast Auger decay20,21, and
small biexciton binding energy22,23. The former relates to enhanced non-radiative recombination of multi-exciton
states in nanometer confinement with a typical time constant of tens to hundred picoseconds, which leads to ultrafast
deactivation of the high-order correlated excitonic states. The latter relates to Coulomb interaction to form a bounded
four-body complex from two excitons. The biexciton binding energy in colloidal nanomaterials22 is typically smaller
than 30 meV, comparable to the thermal energy at room temperature and much smaller than the inhomogeneous
broadening of exciton emission. Insufficient binding energy causes the thermal dissociation of biexciton states at room
temperature and makes biexcitonic transition inseparable from exciton states. Suppression of Auger recombination
has been investigated extensively for colloidal nanocrystals to achieve optical gain practically. Large-volume
nanocrystals leveraging the well-known 'volume scaling'21,24 or interfacial alloying core/shell nanocrystals20,25
utilizing the smoothed confinement potential exhibit relatively long Auger recombination (nanosecond timescales).
Unfortunately, large-size nanomaterials which lose the benefits of strong quantum confinement (i.e. large binding
energy and reduced dielectric screening)24,26 and smooth interface nanocrystals which associate with broad
photoluminescence (PL) spectrum (FWHM: > 30 nm, caused by the interface composition gradient)20,27 are hard to be
ideal biexciton sources.
The requirements for colloidal nanomaterials which reconcile suppressed Auger recombination, quantum confinement
and narrow emission spectrum can be satisfied with colloidal quantum wells (CQWs)18,28,29. In this quasi-2D system,
the exciton wave functions are quantized only in vertical direction, which makes Auger process hard to meet the
momentum conservation compared with the situation in colloidal quantum dots18,22. Also, the exciton emission in
CQWs exhibits extremely narrow linewidth at room temperature (FWHM of 4-monolayer CdSe CQWs: ~40 meV)
due to vertical thickness control at the single atomic layer level and weak phonon coupling30-34. However, the highest
biexciton binding energy reported for CQWs (~ 34 meV) is still smaller than their emission bandwidth, and thus the
biexciton emission peak is only resolved at cryogenic temperature22,31,33.
Brovelli and colleagues35 have shown that in Ag doped CdSe colloidal quantum dots (CQDs), by exploiting the effect
of excitonic carriers in host nanomaterials on dopant ions, the nonmagnetic dopants can exhibit optically switchable
magnetism. Ag+ dopants are not magnetic ([Kr]4d10, there is no unpaired electron spin in full 4d shell), after capturing
the photo-generated hole in host CdSe, Ag+ is oxidized to Ag2+ ([Kr]4d9) and the unpaired electron spin can exhibit
paramagnetic behavior. Reversibly, we propose that in doped CdSe CQWs, through utilizing the effect of dopant ions
on the excitonic carriers in host nanomaterials, the biexciton binding energy can be enhanced. The dopants strongly
capturing the photo-generated holes dilute the carrier density in the host nanomaterial, thus increases Debye screening
length (reduces the dielectric screening) leading to increased biexciton binding energy36-38. In this work, we have
demonstrated Cu dopants in CQWs enhances the biexciton binding energy up to 64 meV, a factor of 2 greater than
the values reported in undoped counterparts. The boosted biexciton binding energy, suppressed Auger, and narrow
emission spectrum enable continuous-wave biexciton emission at room temperature. A comprehensive analysis of this
sustainable biexciton emission in Cu-doped CdSe CQWs (Cu:CdSe CQWs) is presented via the carrier dynamics
(time-resolved photoluminescence and transient absorption) with temperature and excitation dependent emission
spectra.
Cu:CdSe CQWs as a dopant-host system
We prepared Cu-doped CdSe CQWs according to the existing recipe39 and optimized the procedures to achieve highly
efficient and reproducible synthesis (details of the synthesis and material characterization are described in
2
Supplementary Note 1). The structure information of Cu:CdSe CQWs is shown in Supplementary Fig. S1: the four-
monolayer (4 ML) CQWs are 1.2 nm thick18 and tens of nanometers along each side laterally. The PL quantum yield
(PLQY) of Cu:CdSe CQWs is in the range of 40% to 80% depends on the amount of Copper precursor added in the
synthesis (Fig. S2). In terms of biexcitonic emission behavior, CQW with ~30 Cu dopants (see Methods) is tested in
this work unless otherwise mentioned.
Figure 1. The dopant-host system in a Cu:CdSe CQW. CE: copper-related emission; BE: band edge emission. (a) Schematic of carrier
dynamics in the Cu-doped CQWs with photo excitation. After capturing of a VB hole (process 1), Cu+ is changed to Cu2+, activating the CE through
recombining with a CB electron (process 3). (b) Optical absorption and steady-state PL spectrum of Cu-doped CQWs in solution under Xeon lamp
illumination, green color region indicates the BE and red color region indicates the CE. (c) Conceptual illustration of the reduced Coulomb screening
in Cu-doped CQWs. Utilizing the hole-capture ability of Cu dopants, the carrier density in host CdSe CQWs has been diluted and longer Debye
length can be expected. Red curve: with copper dopants. Blue curve: without copper dopants. (d) Normalized decay curves of BE for undoped
CQWs and Cu-doped CQWs under the pump fluence of 0.4 μJ/cm2. The PL dynamics of both doped and undoped CQWs are probed at 514 nm.
The difference in dynamics sheds light on the suppressed intrinsic traps and the hole capture rate of Cu-dopants. (e) Time-resolved
photoluminescence of BE and CE in Cu-doped CQWs with the pump fluence of 0.4 μJ/cm2. The black circles show the excitonic dynamics (514
nm) and the red squares presents the copper MLCBCT dynamics (integrated between 650 and 750 nm). Fitting the CE dynamics (blue solid line)
yields the time constant of hole capture process (~1 ns), which is much slower compared with the Cu-doped quantum dots19.
The copper dopants in CQW host behave like a hole-trapper40-44, as illustrated in Fig. 1a. After excitation, copper
dopants irreversibly localize the photo-generated holes in CQW host, Cu+ is promoted to Cu2+ and therefore activated
as a radiative acceptor for the conduction band (CB) electrons, which can be expressed as35: [Ar]3d9 + e → [Ar]3d10
+ hν (hν is the photon energy of Cu-related emission and e denotes an electron in CB)19,39. As a result, the
photoluminescence (PL) spectrum (Fig. 1b) of Cu:CdSe CQWs is composed of two emission bands: (1) a narrow
band-edge emission (BE) at ~514 nm with a full-width at half-maximum (FWHM) of ~40 meV, which is not affected
by copper dopants; (2) a broad Cu-related emission (CE) peaking at ~700 nm with a very large FWHM of ~350 meV,
the broad emission linewidth is arising from a wide distribution of copper energy level rather than size/doping
inhomogeneity within an ensemble of Cu:CdSe CQWs, as detailed previously40,41,44,45. The absorption spectrum (Fig.
1b) of Cu:CdSe CQWs is also consistent with the scenario presented in Fig. 1a: two clear excitonic features associated
with electron to heavy-hole (512 nm) and electron to light-hole (480 nm) transitions, remain unchanged compared
with undoped CdSe CQWs (absorption spectra of undoped and doped CQWs with different copper doping levels are
presented in Fig. S2). Notably, there exists a weak and broad absorption tail on the red side of the first CQW excitonic
maximum (Fig. S2), which can be assigned as the direct transition of d orbital electrons in Cu+ to the CB of CdSe
CQWs39,41,43. However, the contribution of this transition to BE and CE is eliminated since the extinction coefficient
-1cm-1 (Fig. S3a) and without the hole-capture process, the
of this tail at its maximum is smaller than 1000 MCu
extremely low recombination rate (0.002 ns-1, Fig. S3b) between Cu2+ and CB electron cannot compete with the band-
edge recombination.
3
In quantum-confined nanomaterials, the screened Coulomb potential for electrons and holes can be reduced with
, where <N> is the number of photo-generated
longer Debye screening length (in neutral systems,
excitons per nanoparticles)46-47. Several groups have demonstrated that the binding energy in nanomaterials can be
, where ne is the
significantly weakened via free electron injection since the screening length (
number of injected electrons) is smaller compared to the neutral case36,37. Accordingly, in Cu:CdSe CQWs, as
conceptually illustrated in Fig. 1c, the hole-localization ability of Cu+ can strongly dilute the hole density and expand
is a ratio to consider the widely
the screening length in host CdSe CQWs (
, where
distributed energy levels of Cu+). Thus, enhanced many-body interaction can be expected in this host-dopant system.
In view of this host-dopant system, the diluted hole concentration in CQW host is suggested by strong CE (Fig. 1b).
It is important to ensure the hole-capture dynamics can support the radiative many-body states since the ultrafast hole
consumption leads to insufficient constituent (holes) for many-body complexes. To figure out the kinetics of hole
capturing in Cu:CdSe CQWs, Fig. 1d presents the BE dynamics of undoped and doped CQWs in the sub-nanosecond
time scale, which shows that the ultrafast recombination channel (~31 ps) is absent in doped CQWs. The single
exponential decay behavior of Cu:CdSe CQWs in a short time window is consistent with the theoretical calculation
conducted by Nelson44,48, in which highly localized covalent [CuSe4] cluster can suppress or deactivate intrinsic traps
and thus, enhance the quantum efficiency of Cu-doped nanocrystals (Fig. S2). Here, we can assume that Auger can be
negligible in low pumping regime (<N> is smaller than 0.1), only hole capture process is responsible for the difference
in BE dynamics between undoped and doped CQWs. Thus, we can extract the time constant of hole capture process49
(τhc) from exciton lifetime of doped (τdoped) and undoped (τundoped) CQWs using 1/τundoped +1/τhc = 1/τdoped, which is
around 1.1 ns.
Furthermore, since the prerequisite of CE is Cu+ localizes a hole, hole-capturing time can be calculated from the rising
part of CE43. As shown in Fig. 1e, in a nanosecond time window, a slow rising process in CE indicating a time constant
of 977±45 ps is in good agreement with hole-capture dynamics extracted from Fig. 1d. It is worth to mention that, the
onset of CE is significantly delayed compared to BE, emphasizing again the proposed carrier dynamics in Fig. 1a. In
addition, as shown in Fig. S4, by comparing the gated emission spectra of Cu:CdSe CQWs when CE is absent
(integrated time window: 0~1 ns), and when both CE and BE are present (integrated time window: 1~5 ns), we can
draw the same conclusion that the time constant of hole-capture process in Cu:CdSe CQWs is prolonged and in the
range of nanosecond. Compared with the ultrafast hole-capture process (an averaged lifetime of ~25 ps) in Cu:CdSe
CQDs43, we attribute the slow dynamics in CQWs to the larger spatial separation of band-edge excitons and copper
dopants due to large lateral size of the structure. The 2D morphology can slow down the hole localization, suppress
the Auger recombination and lengthen the lifetime of multiple-exciton, as four-exciton states observed in CdSe/CdTe
CQWs using transient absorption spectroscopy50,51.
Continuous-wave excited biexcitons
We have therefore obtained a colloidal nanomaterial with several unique properties that are crucial to radiative many-
body complexes: reduced Coulomb screening, slow hole localization and suppressed Auger. To identify the potential
many-body complexes in Cu:CdSe CQWs, PL of the drop-cast film under continuous-wave excitation with different
intensity at room temperature has been studied (Fig. 2a and Fig. 2b). With low pump intensity (< 6 W/cm2, the bottom
spectrum in Fig. 2b), the BE shows single symmetric peak located at ~514 nm, which is assigned to typical single
exciton emission4,5. With gradually increased excitation intensity, a new emission feature appears at the low-energy
side (peaking at ~528 nm) and the intensity of this new feature grows much faster than the intensity of exciton emission
with increasing excitation intensity (see the recorded movie in Supplementary Materials). Beyond the excitation
intensity of ~10 W/cm2, the new feature emerges as the strongest emission channel (see Fig. 2c, the maximum intensity
of BE shifts from 514 to 528 nm with higher excitation intensity).
To quantitatively analyze the properties of the emerging emission feature, BE is fitted by two separately symmetric
emissions using Voigt function22,52, as shown in Fig. 2b. The fitting profiles are in good agreement with the
experimental spectra with different excitation intensities. After spectrally separating the exciton emission and the new
emission feature, Fig. 2d presents the integrated emission intensities as a function of the excitation intensity. The
excitation intensity dependence of these two features can be described adequately by the power-law equation8-12:
k. The exciton emission exhibits a slightly sublinear fluence dependence (k = 0.91), due to the hole
Iemission
IIntensity
4
1/DebyeLN1/DebyeeLNn1/DebyeCuLNn capturing process from host CQWs to Cu+ sites8,43. However, the integrated intensity of the new emerged emission
displays a superlinear growth with excitation intensity (k = 1.68). On the basis of nearly quadratic (our case is ~1.85)
intensity dependence of the new emission feature with respect to the exciton emission, the new feature peaked at ~528
nm can only be assigned to biexcitons formed from two excitons, the population of each exciton growing almost
linearly (~ 0.91) with excitation intensity12. This is similar to the case of biexcitons in other systems, providing a first
evidence that Cu:CdSe CQWs support radiative biexcitons at room temperature with extraordinary low excitation
intensity (~ 10 W/cm2).
Figure 2. Photoluminescence spectra of Cu-doped CQWs at room temperature with varied continuous-wave excitation intensities. (a)
Normalized BE map of Cu:CdSe CQWs under different excitation intensities. The white dashed lines indicate different excitation intensities and
the ordered numbers correlate to the BE spectra in Fig. 2b. (b) BE spectra recorded for different excitation intensities. Black dots: measurement;
green line: the fitting of exciton; blue line: the fitting of biexciton; red line: the overall fitting. (c) Wavelength of the maximum BE intensity as a
function of the excitation intensity. Beyond ~10 W/cm2, the intensity of biexciton emission (peaking at ~528 nm) exceeds the exciton emission
(peaking at ~514 nm). (d) Logarithmic plot of the integrated emission intensity for exciton (red stars) and biexciton (blue circles) as a function of
the excitation intensities. The green and blue solid lines are the power-law fitting for exciton and biexciton, respectively.
Furthermore, the biexciton binding energy can be extracted based on the energy difference between exciton and
biexciton emissions assuming that the radiative decay of a biexciton will generate one photon and an exciton (see the
derivation in Methods) 8,12. The value of ~64 meV derived here is two-fold of the biexciton binding energy in undoped
CdSe CQWs22 (see PL spectra of undoped CdSe CQWs in Fig. S5). This is also higher than that of inorganic colloidal
perovskites52 and surprisingly comparable to the value in monolayer WSe2
8. Instead of classical explanation for the
enhanced biexciton binding energy using reduced Coulomb screening as illustrated in Fig. 1c, we have performed
quantum-mechanical calculation using a biexciton Hamiltonian with a perturbed electron-hole interaction potential by
copper dopants to obtain deeper physical insight into the biexciton state. The simulation yields an enhancement of
biexciton binding energy of ~30% in Cu:CdSe CQWs compared to undoped CdSe CQWs, which is in good agreement
with the experimental result (see Fig. S11, Fig. S12 and details of the calculation in Supplementary Note 3).
5
Figure 3. Photoluminescence spectra of Cu-doped CQWs with fixed excitation intensity of 10 W/cm2 at different temperatures. (a) BE map
of Cu:CdSe CQWs at different temperatures. The white dashed lines correspond to different temperatures and the ordered numbers correlate to the
BE spectra in Fig. 3b. (b) BE spectra recorded at different temperatures. Black dots and red/green/blue lines have the same denotations as expressed
in Fig. 2. (c) Integrated biexciton emission intensity (blue stars) as a function of 1/T. The red line is the Boltzmann distribution fitting, which yields
an activation energy of ~60 meV. (d) Normalized CE map as a function of the temperature. the suppressed CE suggests the weaker hole capture
ability of copper sites at low temperature.
To probe the biexciton states in more detail, we have investigated the thermal stability of biexcitons in Cu:CdSe CQWs
at the excitation intensity of 10 W/cm2. As temperature decreases from 298 to 125 K, besides the expected spectra
change and increased emission intensity (Fig. 3a and Fig. 3b), biexciton emission displays a small intensity increasing
rate when T < 100 K (Fig. 3c). This trend can be explained by the assumption8 that the formation rate of biexciton is
roughly constant with varied T, while the dissociation rate (γbiex) is enhanced by the thermal energy: γbiex = γconst +
a*exp(-Ea/kBT), where γconst is a fixed recombination rate, a is a ratio factor and Ea is the activation energy. Meanwhile,
the integrated emission intensity of biexciton could be well fitted by the Boltzmann distribution (see Methods) 6,8,53
with an activation energy Ea of ~60 meV (Fig. 3c), for which exp(-Ea/kBT) will have a negligible effect on γbiex and the
integrated intensity of biexciton emission will show a plateau when T is lower than 100 K. The Ea value of ~60 meV
is almost equal to the biexciton binding energy derived from steady-state PL analysis (Fig. 2). This agreement
emphasizes again the peak located at ~528 nm arises from biexcitons, in which the dissociation rate can be tuned by
the thermal energy. Moreover, with decreased temperature, CE exhibits barely blue-shifted and narrowing spectra,
companying with decreased emission intensity (Fig. 3d). This trend is another supporting evidence of the spatial
separation of dopant ions and host carriers (see the discussion in Fig. 1d and Fig. 1e): with gradually decreased
temperature, thermally assisted carrier movement will be suppressed, weakening the hole capture probability and
resulting in reduced CE intensity41.
Transient photophysics of biexcitons
To furtherly justify our assignment of biexcitons, we have investigated the transient photophysics in Cu:CdSe CQWs.
Firstly, we conducted time-resolved PL measurement in Cu:CdSe CQW film with varying excitation fluences (see
6
details in Methods). In the bottom panel of Fig. 4a, a narrow PL spectrum is observed with low excitation fluence (0.4
μJ/cm2, the bottom panel); while with high fluence (0.4 μJ/cm2, the top panel), biexciton emission appears and locates
exactly at the wavelength observed in continuous-wave excited PL (Fig. 2 and Fig. 3). Following the white and black
dashed lines in Fig. 4a, we compare the PL decay trace for X (located at 514 nm) and XX (located at 528 nm). With
low fluence in which biexciton emission is absent, the dynamics of X and XX are almost identical (single-decay
process with similar lifetime of ~234 ps and ~245 ps for X and XX, respectively), and their onsets are at the same
time (see Fig. 4b). In contrast, with high fluence and thus high exciton density (Fig. 4b), the onset of XX is significantly
delayed compared with X, accompanying a fast recombination process with the lifetime of ~128 ps while the lifetime
of X is ~201 ps. This delayed and accelerated decay provides another strong evidence of the biexciton emission6,54 at
XX. Note that the lifetime ratio between exciton and biexciton is ~1.57, which is close to the value reported in
traditional epitaxial quantum wells (GaAs or CdS)55,56. The result strongly suggests a suppressed Auger recombination
in Cu:CdSe CQWs compared to that in type-I CdSe CQDs20,21, where biexciton lifetime is typically two order of
magnitude shorter than exciton lifetime. Moreover, according to the statistics of carrier recombination, the radiative
recombination rate of the biexciton should be one quarter of the value in exciton, here, our ratio is smaller than 4 (ref.
21), excluding the efficient Auger recombination in Cu:CdSe CQWs, as discussed in previous studies22,24,25.
Figure 4. Time-resolved photoluminescence of Cu-doped CQWs. (a) Streak camera images of Cu:CdSe CQWs under excitation of 100 fs pulsed
laser. Top panel: at high excitation fluence (40 μJ/cm2) in which biexciton emission is observed. Bottom panel: at low excitation fluence (0.4
μJ/cm2) in which biexciton emission is absent. Black dashed line is located at 514 nm (X: exciton) and white dashed line is located at 528 nm (XX:
biexciton). (b) Decay traces probed at 514 nm and 528 nm and corresponding fitting curves when the excitation fluence is 0.4 μJ/cm2. 514 nm
(measurement: black squares, fitting: black solid line), 528 nm (measurement: red circles, fitting: red solid line). (c) Decay traces probed at 514 nm
and 528 nm and corresponding fitting curves when the excitation fluence is 40 μJ/cm2. Same color and shape coding as in (b). (d) Normalized PL
intensity decay map of BE in Cu:CdSe CQWs (probed at 514 nm) as a function of the time and the excitation fluence. With low excitation fluence,
the lifetime of X increases due to the filling of copper sites. Further increasing the excitation fluence, multiple carriers dominate the recombination
dynamics of X. (e) Excitation fluence dependent lifetimes probed at 514 nm which is extracted from the 2D contour map shown in Fig. 4d. The red
solid line is the fitting based on the coupled kinetic-equation model (see Fig. S9).
To shed more light on the effect of copper dopants on band edge emission in host CQWs, we have analyzed the fluence
dependent dynamics of exciton (probed at 514 nm). As shown in Fig. 4d, initially increasing fluence results in a slower
dynamics and the exciton lifetime will be close to the value in undoped CQWs (293 ps, Fig, 1d), indicating the fully-
filled or saturated copper sites. This trend validates the proposed carrier mechanism in Fig. 1a and our method to
extract the hole capture lifetime from host CQW to the Cu+ sites (Fig. 1d). With even higher excitation fluence, in
addition to the Cu+ saturation, multiple-exciton interaction process is occurring with high excitation fluence and
accelerates the exciton dynamics (two-exciton interaction process to promote into biexciton)21,57. We furtherly verify
7
our interpretation by reproducing the fluence dependent exciton dynamics using a copper-perturbed coupled kinetic-
equations (see Fig. S8)8,58. Briefly, exciton dynamics is controlled by the interplay between dopant-related exciton
decay rate and fluence dependent exciton-exciton interaction process while biexciton formation rate is related to the
thermal equilibrium status (see the model in Supplementary Note 2 for details). The quality of the fitting (see Fig. 4e)
confirms the validity of our model: with low fluence, exciton dynamics is changing following the filling of Cu+ site;
Whereas with high fluence, multiple carrier interaction takes control the decay channel. Moreover, we can also predict
the biexciton dynamics and fluence dependent biexciton intensity based on the proposed model, which is consistent
with the experimental results (Fig. S10).
Figure 5. Transient absorption spectra of Cu:CdSe CQWs, excitation laser: 100 fs @ 400 nm. (a) 2D transient absorption change (ΔA) images
of Cu:CdSe CQWs (see the ΔA data with the full wavelength range in Fig. S6b). The measurement was obtained at a fluence of 40 μJ/cm2. Also
the negative ΔA beyond the PIA band is only observed in Cu:CdSe CQWs (see the ΔA images of undoped CQWs in Fig. S6a and S6d ). (b) ΔA
spectra as a function of wavelength using different delay time at a fluence of 40 μJ/cm2. The negative band around 528 nm exhibits a delayed
formation. (c) 2D transient absorption (A) images of Cu:CdSe CQWs at a fluence of 40 μJ/cm2. The red color-coded region indicates the stimulated
emission (A < 0) around 528 nm. (d) Time-resolved A spectra (probed at 528 nm) with different fluences. At a fluence of 40 μJ/cm2, the gain can
last over a period of >200 ps. The inset shows the dynamics of -A at a fluence of 40 μJ/cm2 which yields a lifetime of 187±5 ps.
A most striking observation is the stimulated emission in dispersions of Cu:CdSe CQWs at high excitation fluence in
transient-absorption spectra (see Methods), arising from the radiative recombination of biexcitons. As expected, in the
ΔA spectra of Cu:CdSe CQWs, we observe a weak absorption bleach (the transition of d orbital electrons in Cu+ to the
CB of CdSe CQWs, MLCBCT, which is also discussed in Fig. 1) covering the whole spectrum beyond the red side of
the positive photo-induced absorption (PIA) band, as shown in Fig 5a and 5b. This weak absorption bleach exhibits
nearly invariant dynamics within the measured time window (> 3ns) which is consistent with the slow recombination
between CB electrons and copper-trapped holes (lifetime: ~450 ns, Fig. S3). Notably, after several picoseconds delay,
we unambiguously observe the appearance of a strong negative signal (the saturated red region in Fig. 5a) peaked at
~ 528 nm below the PIA band. Here, we can assign the emerged negative signal around 528 nm to a stimulated
emission process, because of three reasons as follows. (i) This does not arise from MLCBCT since this process induced
bleaching should occur simultaneously with the heavy-hole bleaching (see the curve in Fig. 5b with a delay time of
10 fs)43. Moreover, the strong negative signal exhibits much faster decay than the absorption bleaching of MLCBCT,
implying that the negative signal around 528 nm is related to the dynamics of band edge carriers39. (ii) The negative
signal peaking at 528 nm shows a delay formation and only appears after several picosecond (Fig. 4b) with respect to
the linear absorption bleaching band58,59. (iii) The negative signal can only be observed under high pump fluence (see
8
the images of ΔA in Cu:CdSe CQWs with different pump fluences in Fig. S6e) and the energy location is exactly
matching our biexciton emission spectra50,58,59.
The stimulated emission from biexcitons is further verified by the absolute absorbance A(λ,t) = ΔA(λ,t)+A0(λ), where
A0(λ) is the linear absorption with the same measurement condition59,60. Fig. 5c presents the contour map of absolute
absorbance at a pump fluence of 40 μJ/cm2 which codes the positive absorbance with blue color and gain (A<0) with
red color. The optical gain region is exactly matching the biexciton emission resolved in previous part (dashed black
rectangle) and can last more than 100 ps. The dynamics of stimulated emission with different pump fluences probed
at the wavelength of 528 nm is shown in Fig. 5d. with low fluence, no gain can be achieved. With increasing fluence
(> 10 μJ/cm2), the value of A turns negative after the initial short-lived (< 1 ps) positive feature caused by hot carriers.
Significant amplification is observed at a pump fluence of 40 μJ/cm2 with a minimum absorbance value of ~2.4 mOD
(ASE is also demonstrated in Cu:CdSe CQW film with a low threshold of ~53 μJ/cm2, see Fig. S7). At the fluence of
40 μJ/cm2, the optical gain relaxation is fitted to a bi-exponential decay. The slow decay component with a lifetime of
~187 ps matches well with the PL decay probed at 528 nm (~128 ps, Fig 4c), confirming again the long-lived biexciton
states support the observation of sustainable biexciton emission in Cu:CdSe CQWs22,50. Interestingly, the gain
dynamics shows a fast component (with a lifetime of 8.67 ± 0.2 ps) which is absent in the trPL measurement. This
fast decay in absorbance is likely to be assigned to multi-exciton recombination.
Discussion
We have discovered the four-particle neutral biexciton in Cu-doped CdSe CQWs, which is unambiguously identified
by its transient photophysical properties, superlinear emission intensity, and thermal stability. Further studies are
necessary to understand formation mechanism and constituent of biexciton, where the roles of a dark exciton was not
observed in our Cu:CdSe CQWs. This is in contrast with the biexciton mechanism in WSe2 where slow dark excitons
enable biexciton states with continuous-wave excitation12. It is also worth to explore whether biexcitons in Cu-doped
CQWs could have a more significant fine structure splitting since the energy difference between photon pair generated
from biexciton can reduces the pure polarization entanglement substantially13. More evidences to characterize the
electron-hole exchange interaction and optical selection rules could furtherly check the potential of biexciton in Cu-
doped CQWs as practical entanglement photon sources.
Nevertheless, we have demonstrated biexciton emission in Cu-doped CdSe CQWs under continuous-wave excitation
at room temperature. The achievement is attributed to the signatures of the material: large biexciton binding energy
enhanced in host-dopant system and suppressed non-radiative Auger recombination mediated in 2D confinement
structure. The observation of spectrally separable, radiative biexciton states is a key to study coherent many-body
physics, such as condensation and superfluidity. Further, such sustainable biexciton emission at room temperature,
using fully solution-processed colloidal assemblies of nanomaterials, offers broad potential applications in practical
quantum optoelectronics, including quantum logic gates and high-order correlated photon emission.
Methods
Linear optical characterization of Cu:CdSe colloidal quantum wells. Absorption spectra of Cu:CdSe CQWs in hexane is measured by a UV-
VIS spectrophotometer (Shimadzu, UV-1800). PL spectra of Cu:CdSe CQWs in hexane are recorded using a fiber-coupled ANDOR spectrometer
(monochromator: ANDOR Shamrock 303i, CCD: ANDOR iDus 401) with a diode laser excitation (Cobolt 06-MLD, excitation wavelength: 405
nm). Quantum yield (QY) of Cu:CdSe CQWs in hexane is measured with an integrating sphere and calculated as the ratio of absolute emission and
absorption photons. The accuracy of the QY measurement is verified using Rhodamine 6G, whose QY of 94.3% measured in our setup, is found in
good agreement with the standard value of 95%.
Estimation the Cu atomic level. With Inductively coupled plasma mass spectrometry (ICP:MS) we estimated Cu atomic levels with respect to
cadmium and selenium. Average dimensions of our 4 ML Cu:CdSe CQWs measured by TEM microscopy are (36±1.9)×(15.0±1.5)×1.2 nm, which
suggests 13500 cadmium and 10600 selenium atoms in one CQW. Therefore, using ICP:MS measurements we can estimate Cu atoms per CQW.
Time-resolved photoluminescence measurement. Time-resolved PL (TRPL) measurements are performed with a streak camera from Optronics.
The 400-nm pump laser pulses for TRPL are generated from a 1000 Hz regenerative amplifier (Coherent LibraTM). The beam from the regenerative
amplifier has a center wavelength at 800 nm, a pulse width of around 150 fs and is seeded by a mode-locked Ti-sapphire oscillator (Coherent
Vitesse, 80MHz). 400-nm pump laser was obtained by frequency doubling the 800-nm fundamental regenerative amplifier output using a BBO
crystal. All measurements are performed in the solid film at room temperature in ambient air (53±2% humidity) conditions.
Continuous-wave pumping photoluminescence spectroscopy. Continuous-wave excitation PL study is performed with a diode laser (Cobolt 06-
MLD, excitation wavelength: 405 nm) and a fiber-coupled ANDOR spectrometer (monochromator: ANDOR Shamrock 303i, CCD: ANDOR iDus
401). Samples are drop-casted on a glass substrate for both room and low temperature measurements. The measurement is conducted in a surface
9
emission geometry to avoid the spectra shift caused by reabsorption. The excitation spot radius is 50 μm produced by a plano-concave lens with a
focal length of 75 mm. For the low temperature CW PL measurement, sample are cooled with a closed-cycle helium cryostat.
Calculation of the biexciton binding energy based on emission spectra. The biexciton binding energy is defined as the energy difference between
biexciton states and two free excitons: ∆biex = 2Eex-Ebiex, where ∆biex is the biexciton binding energy; Eex and Ebiex is the energy of exciton and
biexciton, respectively. Considering that the radiative recombination of one biexciton will generate one exciton and emit one photon: Ebiex = Eex +
hνxx = hνx + hνxx (hνx and hνxx is the photon energy of exciton and biexciton emission, respectively). Thus, we can calculate the biexciton binding
energy (∆biex) based on the spectra shift: ∆biex = hνx - hνxx.
Thermal intensity distribution fitting. As explained in Fig. 2g, assuming the formation rate of biexciton is roughly constant with varying
temperature, while the decay rate (γbiex) is enhanced by the thermal energy, the temperature dependent biexciton emission intensity change can be
fitted by a Boltzmann distribution function: b/[1+a*exp(-Ea/kBT)], where b is a constant, a is the coefficient, and Ea is the activation energy which
is corresponding to the biexciton binding energy.
Transient absorption spectroscopy. TA spectroscopy is performed using a HeliosTM setup (Ultrafast Systems LLC) and in transmission mode
with chirp-correction. The white light continuum probe beam (in the range of 400-800 nm) is generated from a 3 mm sapphire crystal using 800
nm pulse from the regenerative amplifier as mentioned in TRPL measurement. The pump beam spot size is ~0.5mm. The probe beam passing
through the sample was collected using a detector for UV -- Vis (CMOS sensor). All measurements are performed at room temperature in solution
(hexane).
Acknowledgements
We would like to acknowledge the financial support from Singapore National Research Foundation under the Program of NRF-NRFI2016-08, the
Competitive Research Program NRF-CRP14-2014-03 and Singapore Ministry of Education AcRF Tier-1 grant (MOE-RG178/17). H.V.D is also
grateful to acknowledge additional financial support from the Z4BA. We would like to thank Muhammad Taimoor and Thomas Kusserow at
University of Kassel (Kassel, Germany) for carefully reading our manuscript.
Author Contributions
C.D. and H.V.D supervised and contributed to all aspects of the research. J.Y., M.S, H.V.D and C.D. wrote the manuscript. J.Y. conducted the
spectroscopy measurement and proposed the coupled kinetic model. M.S performed the material synthesis and designed them to achieve the best
Biexciton lasing performance. S.D and A.S helped in material synthesis and characterizations. M.L. performed lifetime and transient absorption
measurement. M.L. and TC.S. supervised the ultrafast dynamic analysis. P.L.H-M conducted the Hamiltonian calculation to predict the biexciton
binding energy. Y.A. conducted the material characterization. All authors analysed the data, discussed the results, commented on the manuscript
and participated in manuscript revision.
Competing financial interests
The authors declare no competing financial interests.
References
R. M. Stevenson. et al. A semiconductor source of triggered entangled photon pairs. Nature 439, 179-182 (2006).
N. Akopian. et al. Entangled Photon Pairs from Semiconductor Quantum Dots. Phys. Rev. Lett. 76, 130501 (2006).
Daniel Huber et al. Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots. Nature Commun. 8,
15506 (2017).
Paul G. Kwiat et al. New High-Intensity Source of Polarization-Entangled Photon Pairs. Phys. Rev. Lett. 75, 4337 (1995).
Timo Kaldewey et al. Coherent and robust high-fidelity generation of a biexciton in a quantum dot by rapid adiabatic passage. Phys.
Rev. B. 95, 161302 (2017).
Chen J. et al. Room Temperature Continuous-wave Excited Biexciton Emission in CsPbBr3 Nanocrystals. arXiv:1804.09782 (2018).
Yu-Ming He et al. Cascaded emission of single photons from the biexciton in monolayered WSe2. Nature Commun. 7, 13409 (2016).
You, Y. et al. Observation of biexcitons in monolayer WSe2. Nature Phys. 11, 477 -- 481 (2015).
Shao-Yu Chen et al. Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor. Nature Commun. 9,
3717 (2018).
Kai Hao et al. Neutral and charged inter-valley biexcitons in monolayer MoSe2. Nature Commun. 8, 15552 (2017).
Zhipeng Li et al. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2. Nature Commun. 9, 3719 (2018).
Ziliang Ye et al. Efficient generation of neutral and charged biexcitons in encapsulated WSe2 monolayers. Nature Commun. 9, 3718
(2018).
Alexander Steinhoff et al. Biexciton fine structure in monolayer transition metal dichalcogenides. Nature Phys. 14, 1199 -- 1204 (2018).
Jiajie Pei et al. Excited State Biexcitons in Atomically Thin MoSe2. ACS Nano 11, 7468 -- 7475 (2017).
Ankur Sharma et al. Highly Enhanced Many-Body Interactions in Anisotropic 2D Semiconductors. Acc. Chem. Res 51, 1164 -- 1173
(2018).
Wonbong Choi et al. Recent development of two-dimensional transition metal dichalcogenides and their applications. Materials
Today 20, 116 -- 130 (2017).
Jiajie Pei et al. Many-Body Complexes in 2D Semiconductors. Adv. Mater. 31, 1706945 (2019).
Ithurria, S. et al. Colloidal nanoplatelets with two-dimensional electronic structure. Nat. Mater. 10, 936 -- 941 (2011).
Debasis Bera et al. Quantum Dots and Their Multimodal Applications: A Review. Materials. 3, 2260 -- 2345 (2010).
Dang, C. et al. Red, green and blue lasing enabled by single-exciton gain in colloidal quantum dot films. Nat. Nanotech. 7, 335 -- 339
(2012).
Klimov, V. I. Quantization of multiparticle auger rates in semiconductor quantum dots. Science 287, 1011 -- 1013 (2000).
10
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
Grim, J. Q. et al. Continuous-wave biexciton lasing at room temperature using solution-processed quantum wells. Nat. Nanotech. 9,
891 -- 895 (2014).
Avidan, A. & Oron, D. Large blue shift of the biexciton state in tellurium doped CdSe colloidal quantum dots. Nano Lett. 8, 2384 -- 2387
(2008).
Jaehoon Lim et al. Optical gain in colloidal quantum dots achieved with direct-current electrical pumping. Nat. Mater. 17, 42 -- 49 (2018).
Kaifeng Wu et al. Towards zero-threshold optical gain using charged semiconductor quantum dots. Nat. Nanotech. 12, 1140 -- 1147
(2017).
Yongfen Chen et al. " Giant" Multishell CdSe Nanocrystal Quantum Dots with Suppressed Blinking. J. Am. Chem. Soc. 130,
5026−5027 (2008).
Park Y-S et al. Effect of Auger Recombination on Lasing in Heterostructured Quantum Dots with Engineered Core/Shell Interfaces.
Nano Letters 15, 7319-7328 (2015).
Ithurria, S. et al. Continuous transition from 3D to 1D confinement observed during the formation of CdSe nanoplatelets. J. Am. Chem.
Soc. 133, 3070 -- 3077 (2011).
Son, J. S. et al. Colloidal synthesis of ultrathin two-dimensional semiconductor nanocrystals. Adv. Mater. 23, 3214 -- 3219 (2011).
She, C. et al. Low-threshold stimulated emission using colloidal quantum wells. Nano Lett. 14, 2772 -- 2777 (2014).
Guzelturk, B. et al. Amplified spontaneous emission and lasing in colloidal nanoplatelets. ACS Nano 8, 6599 -- 6605 (2014).
Flatten, L. C. et al. Strong exciton -- photon coupling with colloidal nanoplatelets in an open microcavity. Nano Lett. 16, 7137 -- 7141
(2016).
Olutas, M. et al. Lateral size-dependent spontaneous and stimulated emission properties in colloidal CdSe nanoplatelets. ACS Nano 9,
5041 -- 5050 (2015).
She, C. et al. Red, yellow, green, and blue amplified spontaneous emission and lasing using colloidal CdSe nanoplatelets. ACS Nano 9,
9475 -- 9485 (2015).
Pinchetti, V. et al. Excitonic pathway to photoinduced magnetism in colloidal nanocrystals with nonmagnetic dopants. Nat.
Nanotech. 13, 1145-151 (2018).
Kin Fai Mak et al. Tuning Many-Body Interactions in Graphene: The Effects of Doping on Excitons and Carrier Lifetimes. Phys. Rev.
Lett. 112, 207401 (2014).
Matteo Barbone et al. Charge-tuneable biexciton complexes in monolayer WSe2. Nature Commun. 9, 3721 (2018).
Yuxuan Lin et al. Dielectric Screening of Excitons and Trions in Single-Layer MoS2. Nano Lett. 14, 5569 -- 5576 (2014).
Sharma, M. et al. Near-Unity Emitting Copper-Doped Colloidal Semiconductor Quantum Wells for Luminescent Solar Concentrators.
Adv. Mater. 29,1700821 (2017).
Sharma, M. et al. Understanding the Journey of Dopant Copper Ions in Atomically Flat Colloidal Nanocrystals of CdSe Nanoplatelets
Using Partial Cation Exchange Reactions. Chem. Mater. 30, 3265-3275 (2018).
Kathryn E. Knowles et al. Singlet−Triplet Splittings in the Luminescent Excited States of Colloidal Cu+:CdSe, Cu+:InP, and CuInS2
Nanocrystals: Charge-Transfer Configurations and Self-Trapped Excitons. J. Am. Chem. Soc. 137, 13138−13147 (2015).
Kira E. Hughes et al. Copper's Role in the Photoluminescence of Ag1 -- xCuxInS2 Nanocrystals, from Copper-Doped AgInS2 (x ∼ 0) to
CuInS2 (x = 1). Nano Lett. 19, 1318 -- 1325 (2019).
Hughes, K. E. et al. Photodoping and Transient Spectroscopies of Copper-Doped CdSe/CdS Nanocrystals. ACS Nano 12, 718−728
(2018).
Nelson, H. D. et al. Mid-Gap States and Normal vs Inverted Bonding in Luminescent Cu+- and Ag+-Doped CdSe Nanocrystals. J. Am.
Chem. Soc. 139, 6411−6421 (2017).
Ward van der Stam et al. Tuning and Probing the Distribution of Cu+ and Cu2+ Trap States Responsible for Broad- Nanocrystals Band
Photoluminescence in CuInS2. ACS Nano 12, 11244−11253 (2018).
Eric Stern et al. Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors. Nano Lett. 7, 3405 -- 3409
(2007).
Alpha A. Lee et al. Scaling Analysis of the Screening Length in Concentrated Electrolytes. Phys. Rev. Lett. 119, 026002 (2017).
Nelson, H. D. et al. Computational Studies of the Electronic Structures of Copper-Doped CdSe Nanocrystals: Oxidation States,
Jahn−Teller Distortions, Vibronic Bandshapes, and Singlet−Triplet Splittings. J. Phys. Chem. C 120, 5714−5723 (2016).
FT Rabouw, et al. Delayed exciton emission and its relation to blinking in CdSe quantum dots. Nano Lett. 15, 7718 -- 7725 (2015).
Li, Q. et al. Low Threshold Multiexciton Optical Gain in Colloidal CdSe/CdTe Core/Crown Type-II Nanoplatelet Heterostructures. ACS
Nano 11, 2545− 2553 (2017).
Li, Q. et al. Efficient Diffusive Transport of Hot and Cold Excitons in Colloidal Type II CdSe/CdTe Core/Crown Nanoplatelet
Heterostructures. ACS Energy Letters 2, 174−181 (2017).
Wang Y. et al. All-inorganic colloidal perovskite quantum dots: A new class of lasing materials with favorable characteristics. Adv.
Mater. 27, 7101 -- 7108 (2015).
Fujisawa, J.; Ishihara, T. Excitons and biexcitons bound to a positive ion in a bismuth-doped inorganic-organic layered lead iodide
semiconductor. Phys. Rev. B 70, 205330 (2004).
Bacher, G., et al. Biexciton versus exciton lifetime in a single semiconductor quantum dot. Phys. Rev. Lett. 83, 4417-4420 (1999).
Phillips, R. et al. Biexciton creation and recombination in a GaAs quantum well. Phys. Rev. B 45, 4308-4311 (1992).
Woggon, U. et al. Huge binding energy of localized biexcitons in CdS/ZnS quantum structures. Phys. Rev. B 61, 12632 -- 12635 (2000).
Malko, A. V. et al. Pump-intensity- and shell-thickness-dependent evolution of photoluminescence blinking in individual
core/shell CdSe/CdS nanocrystals. Nano Lett. 11, 5213 -- 5218 (2011).
Soavi, G. et al. Exciton -- exciton annihilation and biexciton stimulated emission in graphene nanoribbons. Nat. Commun. 7, 11010 (2016).
Sutherland, B. R. et al. Perovskite thin films via atomic layer deposition. Adv. Mater. 27, 53 -- 58 (2015).
Geiregat, P. et al. Continuous-Wave Infrared Optical Gain and Amplified Spontaneous Emission at Ultralow Threshold by Colloidal
HgTe Quantum Dots. Nat. Mater. 17, 35-42 (2017).
11
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
37.
38.
39.
40.
41.
42.
43.
44.
45.
46.
47.
48.
49.
50.
51.
52.
53.
54.
55.
56.
57.
58.
59.
60.
|
Subsets and Splits